National Library of Energy BETA

Sample records for quantum dot phosphors

  1. Research Challenge 2: Quantum Dots and Phosphors

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2: Quantum Dots and Phosphors - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Energy Defense Waste Management Programs

  2. High Efficiency Colloidal Quantum Dot Phosphors

    SciTech Connect (OSTI)

    Kahen, Keith

    2013-12-31

    The project showed that non-Cd containing, InP-based nanocrystals (semiconductor materials with dimensions of ~6 nm) have high potential for enabling next-generation, nanocrystal-based, on chip phosphors for solid state lighting. Typical nanocrystals fall short of the requirements for on chip phosphors due to their loss of quantum efficiency under the operating conditions of LEDs, such as, high temperature (up to 150 C) and high optical flux (up to 200 W/cm2). The InP-based nanocrystals invented during this project maintain high quantum efficiency (>80%) in polymer-based films under these operating conditions for emission wavelengths ranging from ~530 to 620 nm. These nanocrystals also show other desirable attributes, such as, lack of blinking (a common problem with nanocrystals which limits their performance) and no increase in the emission spectral width from room to 150 C (emitters with narrower spectral widths enable higher efficiency LEDs). Prior to these nanocrystals, no nanocrystal system (regardless of nanocrystal type) showed this collection of properties; in fact, other nanocrystal systems are typically limited to showing only one desirable trait (such as high temperature stability) but being deficient in other properties (such as high flux stability). The project showed that one can reproducibly obtain these properties by generating a novel compositional structure inside of the nanomaterials; in addition, the project formulated an initial theoretical framework linking the compositional structure to the list of high performance optical properties. Over the course of the project, the synthetic methodology for producing the novel composition was evolved to enable the synthesis of these nanomaterials at a cost approximately equal to that required for forming typical conventional nanocrystals. Given the above results, the last major remaining step prior to scale up of the nanomaterials is to limit the oxidation of these materials during the tens of

  3. SUNY/Buffalo Developing High-Efficiency Colloidal Quantum Dot Phosphors

    Office of Energy Efficiency and Renewable Energy (EERE)

    The State University of New York at Buffalo is working to reduce the cost and increase the performance of LEDs for general illumination by developing high-efficiency colloidal quantum dot phosphors to replace conventional phosphors (i.e., those placed directly on the chip). Colloidal quantum dot phosphors are nanocrystal emitters and contain no rare-earth elements. What's more, it's possible to tune the emission wavelength merely by changing their size.

  4. 'Giant' Nanocrystal Quantum Dots

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy Frontier Research Centers: Solid-State Lighting Science Center for Frontiers of ... 'Giant' Nanocrystal Quantum Dots HomeEnergy ResearchEFRCsSolid-State Lighting Science ...

  5. Quantum Dots: Theory

    SciTech Connect (OSTI)

    Vukmirovic, Nenad; Wang, Lin-Wang

    2009-11-10

    This review covers the description of the methodologies typically used for the calculation of the electronic structure of self-assembled and colloidal quantum dots. These are illustrated by the results of their application to a selected set of physical effects in quantum dots.

  6. Giant Nanocrystal Quantum Dots as Stable and Efficient Down-Conversion...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: Giant Nanocrystal Quantum Dots as Stable and Efficient Down-Conversion Phosphor for LED based Solid State Lighting Citation Details In-Document Search Title: ...

  7. Giant Nanocrystal Quantum Dots as Stable and Efficient Down-Conversion

    Office of Scientific and Technical Information (OSTI)

    Phosphor for LED based Solid State Lighting (Technical Report) | SciTech Connect Technical Report: Giant Nanocrystal Quantum Dots as Stable and Efficient Down-Conversion Phosphor for LED based Solid State Lighting Citation Details In-Document Search Title: Giant Nanocrystal Quantum Dots as Stable and Efficient Down-Conversion Phosphor for LED based Solid State Lighting Authors: Kundu, Janardan [1] ; Ghosh, Yagnaseni [1] ; Dennis, Allison M. [1] ; Htoon, Han [1] ; Hollingsworth, Jennifer A

  8. 'Giant' Nanocrystal Quantum Dots

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    'Giant' Nanocrystal Quantum Dots - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Energy Defense Waste Management Programs

  9. Few Electron Quantum Dot coupling ...

    Office of Scientific and Technical Information (OSTI)

    Electron Quantum Dot coupling to Donor Implanted Electron Spins Martin Rudolph1. P. Harvey-Collard12, E. Nielson1, J.K. Gamble1, R. Muller1, T. Jacobson1, G. Ten-Eyck1, J. ...

  10. Probing charge transfer in a novel class of luminescent perovskite-based heterostructures composed of quantum dots bound to RE-activated CaTiO3 phosphors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Crystal S. Lewis; Wong, Stanislaus S.; Liu, Haiqing; Han, Jinkyu; Wang, Lei; Yue, Shiyu; Brennan, Nicholas A.

    2016-01-04

    We report on the synthesis and structural characterization of novel semiconducting heterostructures composed of cadmium selenide (CdSe) quantum dots (QDs) attached onto the surfaces of novel high-surface area, porous rare-earth-ion doped alkaline earth titanate micron-scale spherical motifs, i.e. both Eu-doped and Pr-doped CaTiO3, composed of constituent, component nanoparticles. These unique metal oxide perovskite building blocks were created by a multi-pronged synthetic strategy involving molten salt and hydrothermal protocols. Subsequently, optical characterization of these heterostructures indicated a clear behavioral dependence of charge transfer in these systems upon a number of parameters such as the nature of the dopant, the reaction temperature,more » and particle size. Specifically, 2.7 nm diameter ligand-functionalized CdSe QDs were anchored onto sub-micron sized CaTiO3-based spherical assemblies, prepared by molten salt protocols. We found that both the Pr- and Eu-doped CaTiO3 displayed pronounced PL emissions, with maximum intensities observed using optimized lanthanide concentrations of 0.2 mol% and 6 mol%, respectively. Analogous experiments were performed on Eu-doped BaTiO3 and SrTiO3 motifs, but CaTiO3 still performed as the most effective host material amongst the three perovskite systems tested. Furthermore, the ligand-capped CdSe QD-doped CaTiO3 heterostructures exhibited effective charge transfer between the two individual constituent nanoscale components, an assertion corroborated by the corresponding quenching of their measured PL signals.« less

  11. Quantitative multiplexed quantum dot immunohistochemistry

    SciTech Connect (OSTI)

    Sweeney, E.; Ward, T.H.; Gray, N.; Womack, C.; Jayson, G.; Hughes, A.; Dive, C.; Byers, R.

    2008-09-19

    Quantum dots are photostable fluorescent semiconductor nanocrystals possessing wide excitation and bright narrow, symmetrical, emission spectra. These characteristics have engendered considerable interest in their application in multiplex immunohistochemistry for biomarker quantification and co-localisation in clinical samples. Robust quantitation allows biomarker validation, and there is growing need for multiplex staining due to limited quantity of clinical samples. Most reported multiplexed quantum dot staining used sequential methods that are laborious and impractical in a high-throughput setting. Problems associated with sequential multiplex staining have been investigated and a method developed using QDs conjugated to biotinylated primary antibodies, enabling simultaneous multiplex staining with three antibodies. CD34, Cytokeratin 18 and cleaved Caspase 3 were triplexed in tonsillar tissue using an 8 h protocol, each localised to separate cellular compartments. This demonstrates utility of the method for biomarker measurement enabling rapid measurement of multiple co-localised biomarkers on single paraffin tissue sections, of importance for clinical trial studies.

  12. Quantum Dot Light Emitting Diode

    SciTech Connect (OSTI)

    Keith Kahen

    2008-07-31

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m2, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  13. Quantum Dot Light Emitting Diode

    SciTech Connect (OSTI)

    Kahen, Keith

    2008-07-31

    The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m{sup 2}, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

  14. Modeling of the quantum dot filling and the dark current of quantum dot infrared photodetectors

    SciTech Connect (OSTI)

    Ameen, Tarek A.; El-Batawy, Yasser M.; Abouelsaood, A. A.

    2014-02-14

    A generalized drift-diffusion model for the calculation of both the quantum dot filling profile and the dark current of quantum dot infrared photodetectors is proposed. The confined electrons inside the quantum dots produce a space-charge potential barrier between the two contacts, which controls the quantum dot filling and limits the dark current in the device. The results of the model reasonably agree with a published experimental work. It is found that increasing either the doping level or the temperature results in an exponential increase of the dark current. The quantum dot filling turns out to be nonuniform, with a dot near the contacts containing more electrons than one in the middle of the device where the dot occupation approximately equals the number of doping atoms per dot, which means that quantum dots away from contacts will be nearly unoccupied if the active region is undoped.

  15. Controlling thermal conductance through quantum dot roughening...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Controlling thermal conductance through quantum dot roughening at interfaces. Citation Details ... Publication Date: 2011-01-01 OSTI Identifier: 1110382 Report ...

  16. Promising future of quantum dots explored in conference

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Promising future of quantum dots explored Promising future of quantum dots explored in conference Researchers are gathering to reflect on two decades of quantum dot research at a special topical conference, "20 Years of Quantum Dots at Los Alamos" April 13, 2015 Quantum dot LSC devices under ultraviolet illumination. Quantum dot LSC devices under ultraviolet illumination. Contact Los Alamos National Laboratory Nancy Ambrosiano Communications Office (505) 667-0471 Email "This

  17. Generation of even harmonics in coupled quantum dots (Journal...

    Office of Scientific and Technical Information (OSTI)

    Generation of even harmonics in coupled quantum dots Citation Details In-Document Search Title: Generation of even harmonics in coupled quantum dots Using the spatial-temporal...

  18. Thick-shell nanocrystal quantum dots

    SciTech Connect (OSTI)

    Hollingsworth, Jennifer A.; Chen, Yongfen; Klimov, Victor I.; Htoon, Han; Vela, Javier

    2011-05-03

    Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.

  19. Research Challenge 2: Quantum Dots and Phosphors

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy Frontier Research Centers: Solid-State Lighting Science Center for Frontiers of ... HomeEnergy ResearchEFRCsSolid-State Lighting Science EFRCOur SSLS EFRC's Scientific ...

  20. Shiny quantum dots brighten future of solar cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shiny quantum dots brighten future of solar cells Shiny quantum dots brighten future of solar cells The project demonstrates that superior light-emitting properties of quantum dots can be applied in solar energy by helping more efficiently harvest sunlight. April 14, 2014 Quantum dot LSC devices under ultraviolet illumination. Quantum dot LSC devices under ultraviolet illumination. Contact Nancy Ambrosiano Communications Office (505) 667-0471 Email "The key accomplishment is the

  1. Comparison of quantum confinement effects between quantum wires and dots

    SciTech Connect (OSTI)

    Li, Jingbo; Wang, Lin-Wang

    2004-03-30

    Dimensionality is an important factor to govern the electronic structures of semiconductor nanocrystals. The quantum confinement energies in one-dimensional quantum wires and zero-dimensional quantum dots are quite different. Using large-scale first-principles calculations, we systematically study the electronic structures of semiconductor (including group IV, III-V, and II-VI) surface-passivated quantum wires and dots. The band-gap energies of quantum wires and dots have the same scaling with diameter for a given material. The ratio of band-gap-increases between quantum wires and dots is material-dependent, and slightly deviates from 0.586 predicted by effective-mass approximation. Highly linear polarization of photoluminescence in quantum wires is found. The degree of polarization decreases with the increasing temperature and size.

  2. Theory Of Alkyl Terminated Silicon Quantum Dots

    SciTech Connect (OSTI)

    Reboredo, F; Galli, G

    2004-08-19

    We have carried out a series of ab-initio calculations to investigate changes in the optical properties of Si quantum dots as a function of surface passivation. In particular, we have compared hydrogen passivated dots with those having alkyl groups at the surface. We find that, while on clusters with reconstructed surfaces a complete alkyl passivation is possible, steric repulsion prevents full passivation of Si dots with unreconstructed surfaces. In addition, our calculations show that steric repulsion may have a dominant effect in determining the surface structure, and eventually the stability of alkyl passivated clusters, with results dependent on the length of the carbon chain. Alkyl passivation weakly affects optical gaps of silicon quantum dots, while it substantially decreases ionization potentials and electron affinities and affect their excited state properties. On the basis of our results we propose that alkyl terminated quantum dots may be size selected taking advantage of the change in ionization potential as a function of the cluster size.

  3. Nontoxic quantum dot research improves solar cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar cells made with low-cost, nontoxic copper-based quantum dots can achieve ... LOS ALAMOS, N.M., Dec. 10, 2013-Solar cells made with low-cost, nontoxic copper-based ...

  4. What the Blank Makes Quantum Dots Blink?

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    if scientists can stop them blinking. (Photo by Antipoff, CC BY-SA 3.0) Quantum dots are nanoparticles of semiconductor that can be tuned to glow in a rainbow of colors. ...

  5. Electron Spin Dynamics in Semiconductor Quantum Dots

    SciTech Connect (OSTI)

    Marie, X.; Belhadj, T.; Urbaszek, B.; Amand, T.; Krebs, O.; Lemaitre, A.; Voisin, P.

    2011-07-15

    An electron spin confined to a semiconductor quantum dot is not subject to the classical spin relaxation mechanisms known for free carriers but it strongly interacts with the nuclear spin system via the hyperfine interaction. We show in time resolved photoluminescence spectroscopy experiments on ensembles of self assembled InAs quantum dots in GaAs that this interaction leads to strong electron spin dephasing.

  6. First principle thousand atom quantum dot calculations

    SciTech Connect (OSTI)

    Wang, Lin-Wang; Li, Jingbo

    2004-03-30

    A charge patching method and an idealized surface passivation are used to calculate the single electronic states of IV-IV, III-V, II-VI semiconductor quantum dots up to a thousand atoms. This approach scales linearly and has a 1000 fold speed-up compared to direct first principle methods with a cost of eigen energy error of about 20 meV. The calculated quantum dot band gaps are parametrized for future references.

  7. Nonradiative Recombination Pathways in Noncarcinogenic Quantum Dot

    Broader source: Energy.gov (indexed) [DOE]

    Composites | Department of Energy Lead Performer: UbiQD, LLC - Los Alamos, NM DOE Total Funding: $150,000 Project Term: February 22, 2016 - November 21, 2016 Funding Type: SBIR PROJECT OBJECTIVE Quantum dots composed of I-III-VI materials such as CuInS2 offer a compelling alternative to typical semiconductor quantum-dot systems, because they have no known toxicity and can be manufactured at a much lower cost. The project proposes to evaluate the commercial viability of CuInS2/ZnS quantum

  8. Promising future of quantum dots explored in conference

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Los Alamos Quantum Dots for Solar, Display Technology 2:55 Los Alamos Quantum Dots for Solar, Display Technology Two for the price of one An important breakthrough reported by the ...

  9. Nanoscale engineering boosts performance of quantum dot light...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Quantum dots are nano-sized semiconductor particles whose emission color can be tuned by ... Quantum dots are nano-sized semiconductor particles whose emission color can be tuned by ...

  10. Next-Generation "Giant" Quantum Dots: Performance-Engineered...

    Energy Savers [EERE]

    This project seeks to develop quantum-dot downconverters to be used in LED lighting. The focus will be on synthesizing red-emitting quantum dots, revealing their failure ...

  11. Surface treatment of nanocrystal quantum dots after film deposition

    DOE Patents [OSTI]

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  12. Scalable quantum computer architecture with coupled donor-quantum dot qubits

    SciTech Connect (OSTI)

    Schenkel, Thomas; Lo, Cheuk Chi; Weis, Christoph; Lyon, Stephen; Tyryshkin, Alexei; Bokor, Jeffrey

    2014-08-26

    A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, wherein a first voltage applied across at least one pair of the aligned quantum dot and donor atom controls a donor-quantum dot coupling. A method of performing quantum computing in a scalable architecture quantum computing apparatus includes arranging a pattern of single spin memory donor atoms in a semiconductor layer, forming a plurality of quantum dots arranged with the semiconductor layer and aligned with the donor atoms, applying a first voltage across at least one aligned pair of a quantum dot and donor atom to control a donor-quantum dot coupling, and applying a second voltage between one or more quantum dots to control a Heisenberg exchange J coupling between quantum dots and to cause transport of a single spin polarized electron between quantum dots.

  13. Quantum Dot Tracers for Use in Engineered Geothermal

    Broader source: Energy.gov [DOE]

    Quantum Dot Tracers for Use in Engineered Geothermal presentation at the April 2013 peer review meeting held in Denver, Colorado.

  14. Quantum Dot-Based Cell Motility Assay

    SciTech Connect (OSTI)

    Gu, Weiwei; Pellegrino, Teresa; Parak Wolfgang J; Boudreau,Rosanne; Le Gros, Mark A.; Gerion, Daniele; Alivisatos, A. Paul; Larabell, Carolyn A.

    2005-06-06

    Because of their favorable physical and photochemical properties, colloidal CdSe/ZnS-semiconductor nanocrystals (commonly known as quantum dots) have enormous potential for use in biological imaging. In this report, we present an assay that uses quantum dots as markers to quantify cell motility. Cells that are seeded onto a homogeneous layer of quantum dots engulf and absorb the nanocrystals and, as a consequence, leave behind a fluorescence-free trail. By subsequently determining the ratio of cell area to fluorescence-free track area, we show that it is possible to differentiate between invasive and noninvasive cancer cells. Because this assay uses simple fluorescence detection, requires no significant data processing, and can be used in live-cell studies, it has the potential to be a powerful new tool for discriminating between invasive and noninvasive cancer cell lines or for studying cell signaling events involved in migration.

  15. Exciton binding energy in semiconductor quantum dots

    SciTech Connect (OSTI)

    Pokutnii, S. I.

    2010-04-15

    In the adiabatic approximation in the context of the modified effective mass approach, in which the reduced exciton effective mass {mu} = {mu}(a) is a function of the radius a of the semiconductor quantum dot, an expression for the exciton binding energy E{sub ex}(a) in the quantum dot is derived. It is found that, in the CdSe and CdS quantum dots with the radii a comparable to the Bohr exciton radii a{sub ex}, the exciton binding energy E{sub ex}(a) is substantially (respectively, 7.4 and 4.5 times) higher than the exciton binding energy in the CdSe and CdS single crystals.

  16. Spin filtering in a double quantum dot device: Numerical renormalizati...

    Office of Scientific and Technical Information (OSTI)

    Country of Publication: United States Language: English Subject: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; MATHEMATICAL MODELS; MATHEMATICAL SOLUTIONS; QUANTUM DOTS; ...

  17. Bilayer graphene quantum dot defined by topgates

    SciTech Connect (OSTI)

    Müller, André; Kaestner, Bernd; Hohls, Frank; Weimann, Thomas; Pierz, Klaus; Schumacher, Hans W.

    2014-06-21

    We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK, the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hopping and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout.

  18. Synthesis of CdSe quantum dots for quantum dot sensitized solar cell

    SciTech Connect (OSTI)

    Singh, Neetu Kapoor, Avinashi; Kumar, Vinod; Mehra, R. M.

    2014-04-24

    CdSe Quantum Dots (QDs) of size 0.85 nm were synthesized using chemical route. ZnO based Quantum Dot Sensitized Solar Cell (QDSSC) was fabricated using CdSe QDs as sensitizer. The Pre-synthesized QDs were found to be successfully adsorbed on front ZnO electrode and had potential to replace organic dyes in Dye Sensitized Solar Cells (DSSCs). The efficiency of QDSSC was obtained to be 2.06 % at AM 1.5.

  19. Single-dot optical emission from ultralow density well-isolated InP quantum dots

    SciTech Connect (OSTI)

    Ugur, A.; Hatami, F.; Masselink, W. T.; Vamivakas, A. N.; Lombez, L.; Atatuere, M.

    2008-10-06

    We demonstrate a straightforward way to obtain single well-isolated quantum dots emitting in the visible part of the spectrum and characterize the optical emission from single quantum dots using this method. Self-assembled InP quantum dots are grown using gas-source molecular-beam epitaxy over a wide range of InP deposition rates, using an ultralow growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/{mu}m{sup 2} is realized. The resulting isolated InP quantum dots embedded in an InGaP matrix are individually characterized without the need for lithographical patterning and masks on the substrate. Such low-density quantum dots show excitonic emission at around 670 nm with a linewidth limited by instrument resolution. This system is applicable as a single-photon source for applications such as quantum cryptography.

  20. Geometric spin manipulation in semiconductor quantum dots

    SciTech Connect (OSTI)

    Prabhakar, Sanjay Melnik, Roderick; Inomata, Akira

    2014-04-07

    We propose a method to flip the spin completely by an adiabatic transport of quantum dots. We show that it is possible to flip the spin by inducing a geometric phase on the spin state of a quantum dot. We estimate the geometric spin flip time (approximately 2 ps) which turned out to be much shorter than the experimentally reported decoherence time (approximately 100 ns) that would provide an alternative means of fliping the spin before reaching decoherence. It is important that both the Rashba coupling and the Dresselhaus coupling are present for inducing a phase necessary for spin flip. If one of them is absent, the induced phase is trivial and irrelevant for spin-flip.

  1. Relaxation dynamics in correlated quantum dots

    SciTech Connect (OSTI)

    Andergassen, S.; Schuricht, D.; Pletyukhov, M.; Schoeller, H.

    2014-12-04

    We study quantum many-body effects on the real-time evolution of the current through quantum dots. By using a non-equilibrium renormalization group approach, we provide analytic results for the relaxation dynamics into the stationary state and identify the microscopic cutoff scales that determine the transport rates. We find rich non-equilibrium physics induced by the interplay of the different energy scales. While the short-time limit is governed by universal dynamics, the long-time behavior features characteristic oscillations as well as an interplay of exponential and power-law decay.

  2. Nanoscale engineering boosts performance of quantum dot light emitting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    diodes Quantum dot light emitting diodes Nanoscale engineering boosts performance of quantum dot light emitting diodes Quantum dots are nano-sized semiconductor particles whose emission color can be tuned by simply changing their dimensions. October 25, 2013 Postdoctoral researcher Young-Shin Park characterizing emission spectra of LEDs in the Los Alamos National Laboratory optical laboratory. Postdoctoral researcher Young-Shin Park characterizing emission spectra of LEDs in the Los Alamos

  3. Tuning Into the Right Wavelength: Quantum Dot Rainbow Increases...

    Office of Science (SC) Website

    Tuning Into the Right Wavelength: Quantum Dot Rainbow Increases Solar Cell Efficiency Basic Energy Sciences (BES) BES Home About Research Facilities Science Highlights Benefits of ...

  4. Quantum Dot Tracers for Use in Engineered Geothermal Systems...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Project objective: To develop and demonstrate a new class of tracerssemiconductor nanoparticles(quantum dots)that offer great promise for use in characterizing fracture ...

  5. Few Electron Quantum Dot coupling to Donor Implanted Electron...

    Office of Scientific and Technical Information (OSTI)

    Title: Few Electron Quantum Dot coupling to Donor Implanted Electron Spins. Abstract not provided. Authors: Rudolph, Martin ; Patrick Harvey-Collard ; Nielsen, Erik ; Gamble, John ...

  6. NREL and Partners Demonstrate Quantum Dots that Assemble Themselves - News

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Releases | NREL and Partners Demonstrate Quantum Dots that Assemble Themselves Surprising breakthrough could bolster quantum photonics, solar cell efficiency February 8, 2013 Scientists from the U.S. Department of Energy's National Renewable Energy Laboratory and other labs have demonstrated a process whereby quantum dots can self-assemble at optimal locations in nanowires, a breakthrough that could improve solar cells, quantum computing, and lighting devices. A paper on the new technology,

  7. Giant Nanocrystal Quantum Dots as Stable and Efficient Down-Conversion

    Office of Scientific and Technical Information (OSTI)

    Dots as Stable and Efficient Down-Conversion Phosphor for LED based Solid State Lighting Kundu, Janardan Los Alamos National Laboratory; Ghosh, Yagnaseni Los Alamos...

  8. Quantum-splitting oxide-based phosphors, method of producing, and rules for designing the same

    DOE Patents [OSTI]

    Setlur, Anant Achyut; Comanzo, Holly Ann; Srivastava, Alok Mani

    2003-09-16

    Strontium and strontium calcium aluminates and lanthanum and lanthanum magnesium borates activated with Pr.sup.3+ and Mn.sup.2+ exhibit characteristics of quantum-splitting phosphors. Improved quantum efficiency may be obtained by further doping with Gd.sup.3+. Refined rules for designing quantum-splitting phosphors include the requirement of incorporation of Gd.sup.3+ and Mn.sup.2+ in the host lattice for facilitation of energy migration.

  9. Synthesis and optical properties of cadmium selenide quantum dots for white light-emitting diode application

    SciTech Connect (OSTI)

    Xu, Xianmei; Wang, Yilin; Gule, Teri; Luo, Qiang [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Zhou, Liya, E-mail: zhouliyatf@163.com [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Gong, Fuzhong [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China)

    2013-03-15

    Highlights: ? Stable CdSe QDs were synthesized by the one-step and two-level process respectively. ? The fabricated white LEDs show good white balance. ? CdSe QDs present well green to yellow band luminescence. ? CdSe QDs displayed a broad excitation band. - Abstract: Yellow light-emitting cadmium selenide quantum dots were synthesized using one-step and two-step methods in an aqueous medium. The structural luminescent properties of these quantum dots were investigated. The obtained cadmium selenide quantum dots displayed a broad excitation band suitable for blue or near-ultraviolet light-emitting diode applications. White light-emitting diodes were fabricated by coating the cadmium selenide samples onto a 460 nm-emitting indium gallium nitrite chip. Both samples exhibited good white balance. Under a 20 mA working current, the white light-emitting diode fabricated via the one-step and two-step methods showed Commission Internationale de lclairage coordinates at (0.27, 0.23) and (0.27, 0.33), respectively, and a color rendering index equal to 41 and 37, respectively. The one-step approach was simpler, greener, and more effective than the two-step approach. The one-step approach can be enhanced by combining cadmium selenide quantum dots with proper phosphors.

  10. Controlling quantum dot energies using submonolayer bandstructure engineering

    SciTech Connect (OSTI)

    Yu, L.; Law, S.; Wasserman, D.; Jung, D.; Lee, M. L.; Shen, J.; Cha, J. J.

    2014-08-25

    We demonstrate control of energy states in epitaxially-grown quantum dot structures formed by stacked submonolayer InAs depositions via engineering of the internal bandstructure of the dots. Transmission electron microscopy of the stacked sub-monolayer regions shows compositional inhomogeneity, indicative of the presence of quantum dots. The quantum dot ground state is manipulated not only by the number of deposited InAs layers, but also by control of the thickness and material composition of the spacing layers between submonolayer InAs depositions. In this manner, we demonstrate the ability to shift the quantum dot ground state energy at 77?K from 1.38?eV to 1.88?eV. The results presented offer a potential avenue towards enhanced control of dot energies for a variety of optoelectronic applications.

  11. Numerical simulation of optical feedback on a quantum dot lasers

    SciTech Connect (OSTI)

    Al-Khursan, Amin H.; Ghalib, Basim Abdullattif; Al-Obaidi, Sabri J.

    2012-02-15

    We use multi-population rate equations model to study feedback oscillations in the quantum dot laser. This model takes into account all peculiar characteristics in the quantum dots such as inhomogeneous broadening of the gain spectrum, the presence of the excited states on the quantum dot and the non-confined states due to the presence of wetting layer and the barrier. The contribution of quantum dot groups, which cannot follow by other models, is simulated. The results obtained from this model show the feedback oscillations, the periodic oscillations which evolves to chaos at higher injection current of higher feedback levels. The frequency fluctuation is attributed mainly to wetting layer with a considerable contribution from excited states. The simulation shows that is must be not using simple rate equation models to express quantum dots working at excited state transition.

  12. Quantum-splitting oxide-based phosphors and method of producing the same

    DOE Patents [OSTI]

    Setlur, Anant Achyut; Srivastava, Alok Mani

    2003-09-02

    Strontium, calcium, strontium calcium, strontium calcium magnesium, calcium magnesium aluminates, and strontium borates activated with Pr.sup.3+ exhibit characteristics of quantum-splitting phosphors under VUV excitation. A large emission peak at about 405 nm under VUV excitation is used conveniently to identify quantum-splitting phosphors. Improvements may be achieved with addition of fluorides or boric acid as a flux during the preparation of the phosphors. It is also possible to predict improvement in quantum efficiency by observing the ratio of emission intensities at about 480 nm and about 610 nm.

  13. Electron states in semiconductor quantum dots

    SciTech Connect (OSTI)

    Dhayal, Suman S.; Ramaniah, Lavanya M.; Ruda, Harry E.; Nair, Selvakumar V.

    2014-11-28

    In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.

  14. Competing interactions in semiconductor quantum dots

    SciTech Connect (OSTI)

    van den Berg, R.; Brandino, G. P.; El Araby, O.; Konik, R. M.; Gritsev, V.; Caux, J. -S.

    2014-10-14

    In this study, we introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions at longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.

  15. Competing interactions in semiconductor quantum dots

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    van den Berg, R.; Brandino, G. P.; El Araby, O.; Konik, R. M.; Gritsev, V.; Caux, J. -S.

    2014-10-14

    In this study, we introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions atmore » longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.« less

  16. RKKY interaction in a chirally coupled double quantum dot system

    SciTech Connect (OSTI)

    Heine, A. W.; Tutuc, D.; Haug, R. J.; Zwicknagl, G.; Schuh, D.; Wegscheider, W.

    2013-12-04

    The competition between the Kondo effect and the Ruderman-Kittel-Kasuya-Yoshida (RKKY) interaction is investigated in a double quantum dots system, coupled via a central open conducting region. A perpendicular magnetic field induces the formation of Landau Levels which in turn give rise to the so-called Kondo chessboard pattern in the transport through the quantum dots. The two quantum dots become therefore chirally coupled via the edge channels formed in the open conducting area. In regions where both quantum dots exhibit Kondo transport the presence of the RKKY exchange interaction is probed by an analysis of the temperature dependence. The thus obtained Kondo temperature of one dot shows an abrupt increase at the onset of Kondo transport in the other, independent of the magnetic field polarity, i.e. edge state chirality in the central region.

  17. Kondo and mixed-valence regimes in multilevel quantum dots

    SciTech Connect (OSTI)

    Chudnovskiy, A. L.; Ulloa, S. E.

    2001-04-15

    We investigate the dependence of the ground state of a multilevel quantum dot on the coupling to an external fermionic system and on the interactions in the dot. As the coupling to the external system increases, the rearrangement of the effective energy levels in the dot signals the transition from the Kondo regime to a mixed-valence (MV) regime. The MV regime in a two-level dot is characterized by an intrinsic mixing of the levels in the dot, resulting in nonperturbative subtunneling and supertunneling phenomena that strongly influence the Kondo effect.

  18. A triple quantum dot based nano-electromechanical memory device

    SciTech Connect (OSTI)

    Pozner, R.; Lifshitz, E.; Peskin, U.

    2015-09-14

    Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.

  19. Quantum dot conjugates in a sub-micrometer fluidic channel

    DOE Patents [OSTI]

    Stavis, Samuel M.; Edel, Joshua B.; Samiee, Kevan T.; Craighead, Harold G.

    2008-07-29

    A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.

  20. Quantum dot conjugates in a sub-micrometer fluidic channel

    DOE Patents [OSTI]

    Stavis, Samuel M.; Edel, Joshua B.; Samiee, Kevan T.; Craighead, Harold G.

    2010-04-13

    A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of selected wavelength was used to excite multiple species of quantum dots and organic molecules, and the emission spectra were resolved without significant signal rejection. Quantum dots were then conjugated with organic molecules and detected to demonstrate efficient multicolor detection. PCH was used to analyze coincident detection and to characterize the degree of binding. The use of a small fluidic channel to detect quantum dots as fluorescent labels was shown to be an efficient technique for multiplexed single molecule studies. Detection of single molecule binding events has a variety of applications including high throughput immunoassays.

  1. Synthesis of Non-blinking Semiconductor Quantum Dots Emitting...

    Office of Scientific and Technical Information (OSTI)

    Our previous work demonstrates that Quasi-Type II CdSeCdS core-shell quantum dots with ... synthesized to reduce cadmium exposure for applications in the biological environment. ...

  2. Los Alamos researchers unravel the mystery of quantum dot blinking

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Researchers unravel the mystery of quantum dot blinking Los Alamos researchers unravel the mystery of quantum dot blinking Most exciting is that the Los Alamos researchers have shown that blinking can be controlled and even completely suppressed electrochemically. November 9, 2011 Los Alamos National Laboratory sits on top of a once-remote mesa in northern New Mexico with the Jemez mountains as a backdrop to research and innovation covering multi-disciplines from bioscience, sustainable energy

  3. Deformation potentials of CdSe quantum dots

    SciTech Connect (OSTI)

    Li, Jingbo; Wang, Lin-Wang

    2004-06-02

    The size dependent deformation potentials of CdSe quantum dots are studied by first principle and semi-empirical pseudopotentials calculations. They find that the amplitude of the quantum dot deformation potential is only slightly larger than the bulk value, and this increase is mostly caused by the off {Lambda} point deformation potentials in the bulk, which are larger in amplitude than the {Lambda} point deformation potential.

  4. Los Alamos Quantum Dots for Solar, Display Technology

    SciTech Connect (OSTI)

    Klimov, Victor

    2015-04-13

    Quantum dots are ultra-small bits of semiconductor matter that can be synthesized with nearly atomic precision via modern methods of colloidal chemistry. Their emission color can be tuned by simply varying their dimensions. Color tunability is combined with high emission efficiencies approaching 100 percent. These properties have recently become the basis of a new technology – quantum dot displays – employed, for example, in the newest generation of e-readers and video monitors.

  5. On-chip generation and guiding of quantum light from a site-controlled quantum dot

    SciTech Connect (OSTI)

    Jamil, Ayesha; Farrer, Ian; Griffiths, Jonathan P.; Jones, Geb A. C.; Ritchie, David A.; Skiba-Szymanska, Joanna; Kalliakos, Sokratis; Ward, Martin B.; Ellis, David J. P.; Shields, Andrew J.; Schwagmann, Andre; Brody, Yarden; Cambridge Research Laboratory, Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge, CB4 0GZ

    2014-03-10

    We demonstrate the emission and routing of single photons along a semiconductor chip originating from carrier recombination in an actively positioned InAs quantum dot. Devicescale arrays of quantum dots are formed by a twostep regrowth process. We precisely locate the propagating region of a unidirectional photonic crystal waveguide with respect to the quantum dot nucleation site. Under pulsed optical excitation, the multiphoton emission probability from the waveguide's exit is 12%??5% before any background correction. Our results are a major step towards the deterministic integration of a quantum emitter with the waveguiding components of photonic quantum circuits.

  6. Zeno-logic applications of semiconductor quantum dots

    SciTech Connect (OSTI)

    Schneebeli, L.; Peyghambarian, N.; Feldtmann, T.; Kira, M.; Koch, S. W.

    2010-05-15

    Microscopic calculations show that CdSe-based semiconductor quantum dots with confined exciton and biexciton states are suitable candidates for Zeno-logic applications. The frequencies of the control and signal fields are chosen to guarantee very high transmission of the individual beams. If both fields are present simultaneously, they are strongly absorbed due to efficient ground-state-to-biexciton transitions. The optical Bloch equations for a three-level quantum-dot model with self-consistent light-matter coupling are solved numerically. The influence of dephasing and/or inhomogeneous dot distributions is analyzed and the conditions for satisfactory device operation are identified.

  7. Surface Induced Magnetism in Quantum Dots

    SciTech Connect (OSTI)

    Meulenberg, R W; Lee, J I

    2009-08-20

    The study of nanometer sized semiconductor crystallites, also known as quantum dots (QDs), has seen rapid advancements in recent years in scientific disciplines ranging from chemistry, physics, biology, materials science, and engineering. QD materials of CdSe, ZnSe, InP, as well as many others, can be prepared in the size range of 1-10 nm producing uniform, nearly monodisperse materials that are typically coated with organic molecules [1-3]. The strength of charge carrier confinement, which dictates the size-dependent properties, in these QDs depends on the nature of the material and can be correlated to the Bohr radius for the system of interest. For instance, the Bohr radius for CdSe is {approx} 5 nm, while in the more covalent structure of InP, the Bohr radius approaches {approx} 10 nm. The study of CdSe QDs has been particularly extensive during the last decade because they exhibit unique and tunable optical properties and are readily synthesized with high-crystallinity and narrow size dispersions. Although the core electronic properties of CdSe are explained in terms of the quantum confinement model, experimental efforts to elucidate the surface structure of these materials have been limited. Typically, colloidal CdSe QDs are coated with an organic surfactant, which typically consists of an organo-phosphine, -thiol, or -amine, that has the function of energetically relaxing defect states via coordination to partially coordinated surface atoms. The organic surfactant also acts to enhance carrier confinement and prevent agglomeration of the particles. Chemically, it has been shown that the bonding of the surfactant to the CdSe QD occurs through Cd atoms resulting cleavage of the Se atoms and formation of a Cd-rich (i.e. non-stoichiometric) particle [5].

  8. Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers

    SciTech Connect (OSTI)

    Korenev, V. V. Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

    2013-10-15

    It is analytically shown that the both the charge carrier dynamics in quantum dots and their capture into the quantum dots from the matrix material have a significant effect on two-state lasing phenomenon in quantum dot lasers. In particular, the consideration of desynchronization in electron and hole capture into quantum dots allows one to describe the quenching of ground-state lasing observed at high injection currents both qualitatevely and quantitatively. At the same time, an analysis of the charge carrier dynamics in a single quantum dot allowed us to describe the temperature dependences of the emission power via the ground- and excited-state optical transitions of quantum dots.

  9. Analysis of the efficiency of intermediate band solar cells based on quantum dot supercrystals

    SciTech Connect (OSTI)

    Heshmati, S; Golmohammadi, S; Abedi, K; Taleb, H

    2014-03-28

    We have studied the influence of the quantum-dot (QD) width and the quantum-dot conduction band (QD-CB) offset on the efficiency of quantum-dot intermediate band solar cells (QD-IBSCs). Simulation results demonstrate that with increasing QD-CB offset and decreasing QD width, the maximum efficiency is achieved. (laser applications and other topics in quantum electronics)

  10. Mid-Infrared Quantum-Dot Quantum Cascade Laser: A Theoretical Feasibility Study

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Michael, Stephan; Chow, Weng; Schneider, Hans

    2016-05-13

    In the framework of a microscopic model for intersubband gain from electrically pumped quantum-dot structures we investigate electrically pumped quantum-dots as active material for a mid-infrared quantum cascade laser. Our previous calculations have indicated that these structures could operate with reduced threshold current densities while also achieving a modal gain comparable to that of quantum well active materials. We study the influence of two important quantum-dot material parameters, here, namely inhomogeneous broadening and quantum-dot sheet density, on the performance of a proposed quantum cascade laser design. In terms of achieving a positive modal net gain, a high quantum-dot density canmore » compensate for moderately high inhomogeneous broadening, but at a cost of increased threshold current density. By minimizing quantum-dot density with presently achievable inhomogeneous broadening and total losses, significantly lower threshold densities than those reported in quantum-well quantum-cascade lasers are predicted by our theory.« less

  11. Quantum Hall effect in semiconductor systems with quantum dots and antidots

    SciTech Connect (OSTI)

    Beltukov, Ya. M.; Greshnov, A. A.

    2015-04-15

    The integer quantum Hall effect in systems of semiconductor quantum dots and antidots is studied theoretically as a factor of temperature. It is established that the conditions for carrier localization in quantum-dot systems favor the observation of the quantum Hall effect at higher temperatures than in quantum-well systems. The obtained numerical results show that the fundamental plateau corresponding to the transition between the ground and first excited Landau levels can be retained up to a temperature of T ∼ 50 K, which is an order of magnitude higher than in the case of quantum wells. Implementation of the quantum Hall effect at such temperatures requires quantum-dot systems with controllable characteristics, including the optimal size and concentration and moderate geometrical and composition fluctuations. In addition, ordered arrangement is desirable, hence quantum antidots are preferable.

  12. Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix

    DOE Patents [OSTI]

    Forrest, Stephen R.

    2008-08-19

    A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

  13. Thick-shell nanocrystal quantum dots (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Title: Thick-shell nanocrystal quantum dots Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said ...

  14. R&D Magazine: Windows into Solar Power Sources with Quantum Dots

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    R&D Magazine: Windows into Solar Power Sources with Quantum Dots R&D Magazine: Windows into Solar Power Sources with Quantum Dots A luminescent solar concentrator is an emerging ...

  15. Kondo effect in coupled quantum dots under magnetic fields

    SciTech Connect (OSTI)

    Aono, Tomosuke; Eto, Mikio

    2001-08-15

    The Kondo effect in coupled quantum dots is investigated theoretically under magnetic fields. We show that the magnetoconductance (MC) illustrates the peak structures of Kondo resonant spectra. When the dot-dot tunneling coupling V{sub C} is smaller than the dot-lead coupling {Delta} (level broadening), Kondo resonant levels appear at the Fermi level (E{sub F}). The Zeeman splitting of the levels weakens the Kondo effect, which results in a negative MC. When V{sub C} is larger than {Delta}, the Kondo resonances form bonding and antibonding levels, located below and above E{sub F}, respectively. We observe a positive MC since the Zeeman splitting increases the overlap between the levels at E{sub F}. In the presence of antiferromagnetic spin coupling between the dots, the sign of the MC can change as a function of the gate voltage.

  16. Generation of even harmonics in coupled quantum dots

    SciTech Connect (OSTI)

    Guo Shifang; Duan Suqing; Yang Ning; Chu Weidong; Zhang Wei

    2011-07-15

    Using the spatial-temporal symmetry principle we developed recently, we propose an effective scheme for even-harmonics generation in coupled quantum dots. The relative intensity of odd and even harmonic components in the emission spectrum can be controlled by tuning the dipole couplings among the dots, which can be realized in experiments by careful design of the nanostructures. In particular, pure 2nth harmonics and (2n+1)th harmonics (where n is an integer) can be generated simultaneously with polarizations in two mutual perpendicular directions in our systems. An experimental design of the coupled dots system is presented.

  17. A prototype silicon double quantum dot with dispersive microwave readout

    SciTech Connect (OSTI)

    Schmidt, A. R. Henry, E.; Namaan, O.; Siddiqi, I.; Lo, C. C.; Wang, Y.-T.; Bokor, J.; Yablonovitch, E.; Li, H.; Greenman, L.; Whaley, K. B.; Schenkel, T.

    2014-07-28

    We present a unique design and fabrication process for a lateral, gate-confined double quantum dot in an accumulation mode metal-oxide-semiconductor (MOS) structure coupled to an integrated microwave resonator. All electrostatic gates for the double quantum dot are contained in a single metal layer, and use of the MOS structure allows for control of the location of the two-dimensional electron gas via the location of the accumulation gates. Numerical simulations of the electrostatic confinement potential are performed along with an estimate of the coupling of the double quantum dot to the microwave resonator. Prototype devices are fabricated and characterized by transport measurements of electron confinement and reflectometry measurements of the microwave resonator.

  18. QCAD simulation and optimization of semiconductor double quantum dots

    SciTech Connect (OSTI)

    Nielsen, Erik; Gao, Xujiao; Kalashnikova, Irina; Muller, Richard Partain; Salinger, Andrew Gerhard; Young, Ralph Watson

    2013-12-01

    We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly silicon double quantum dots (DQDs) developed for quantum qubits. The simulator has three di erentiating features: (i) its core contains nonlinear Poisson, e ective mass Schrodinger, and Con guration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; (iii) it couples with an optimization engine Dakota that enables optimization of gate voltages in DQDs for multiple desired targets. The Poisson solver includes Maxwell- Boltzmann and Fermi-Dirac statistics, supports Dirichlet, Neumann, interface charge, and Robin boundary conditions, and includes the e ect of dopant incomplete ionization. The solver has shown robust nonlinear convergence even in the milli-Kelvin temperature range, and has been extensively used to quickly obtain the semiclassical electrostatic potential in DQD devices. The self-consistent Schrodinger-Poisson solver has achieved robust and monotonic convergence behavior for 1D/2D/3D quantum devices at very low temperatures by using a predictor-correct iteration scheme. The QCAD simulator enables the calculation of dot-to-gate capacitances, and comparison with experiment and between solvers. It is observed that computed capacitances are in the right ballpark when compared to experiment, and quantum con nement increases capacitance when the number of electrons is xed in a quantum dot. In addition, the coupling of QCAD with Dakota allows to rapidly identify which device layouts are more likely leading to few-electron quantum dots. Very efficient QCAD simulations on a large number of fabricated and proposed Si DQDs have made it possible to provide fast feedback for design

  19. Self-organized formation of quantum dots of a material on a substrate

    DOE Patents [OSTI]

    Zhang, Zhenyu; Wendelken, John F.; Chang, Ming-Che; Pai, Woei Wu

    2001-01-01

    Systems and methods are described for fabricating arrays of quantum dots. A method for making a quantum dot device, includes: forming clusters of atoms on a substrate; and charging the clusters of atoms such that the clusters of atoms repel one another. The systems and methods provide advantages because the quantum dots can be ordered with regard to spacing and/or size.

  20. Optical control of the emission direction of a quantum dot

    SciTech Connect (OSTI)

    Luxmoore, I. J.; Wasley, N. A.; Fox, A. M.; Skolnick, M. S.; Ramsay, A. J.; Thijssen, A. C. T.; Oulton, R.; Hugues, M.; CNRS-CRHEA, rue Bernard Grgory, 06560 Valbonne

    2013-12-09

    Using the helicity of a non-resonant excitation laser, control over the emission direction of an InAs/GaAs quantum dot is demonstrated. The quantum dot is located off-center in a crossed-waveguide structure, such that photons of opposite circular polarization are emitted into opposite waveguide directions. By preferentially exciting spin-polarized excitons, the direction of emission can therefore be controlled. The directional control is quantified by using the ratio of the intensity of the light coupled into the two waveguides, which reaches a maximum of 35%.

  1. Quantum-dot based nanothermometry in optical plasmonic recording media

    SciTech Connect (OSTI)

    Maestro, Laura Martinez; Zhang, Qiming; Li, Xiangping; Gu, Min; Jaque, Daniel

    2014-11-03

    We report on the direct experimental determination of the temperature increment caused by laser irradiation in a optical recording media constituted by a polymeric film in which gold nanorods have been incorporated. The incorporation of CdSe quantum dots in the recording media allowed for single beam thermal reading of the on-focus temperature from a simple analysis of the two-photon excited fluorescence of quantum dots. Experimental results have been compared with numerical simulations revealing an excellent agreement and opening a promising avenue for further understanding and optimization of optical writing processes and media.

  2. Statistical theory of Coulomb blockade oscillations: Quantum chaos in quantum dots

    SciTech Connect (OSTI)

    Jalabert, R.A.; Stone, A.D.; Alhassid, Y. (Center for Theoretical Physics, Sloane Physics Laboratory, Yale University, New Haven, Connecticut 06511 (United States))

    1992-06-08

    We develop a statistical theory of the amplitude of Coulomb blockade oscillations in semiconductor quantum dots based on the hypothesis that chaotic dynamics in the dot potential leads to behavior described by random-matrix theory. Breaking time-reversal symmetry is predicted to cause an experimentally observable change in the distribution of amplitudes. The theory is tested numerically and good agreement is found.

  3. Out-of-Equilibrium Kondo Effect in Double Quantum Dots

    SciTech Connect (OSTI)

    Aguado, Ramon; Langreth, David C.

    2000-08-28

    The out-of-equilibrium transport properties of a double quantum dot system in the Kondo regime are studied theoretically by means of a two-impurity Anderson Hamiltonian with interimpurity hopping. The Hamiltonian is solved by means of a nonequilibrium generalization of the slave-boson mean-field theory. It is demonstrated that measurements of the differential conductance dI/dV , for appropriate values of voltages and tunneling couplings, can give a direct observation of the coherent superposition between the many-body Kondo states of each dot. For large voltages and arbitrarily large interdot tunneling, there is a critical voltage above which the physical behavior of the system again resembles that of two decoupled quantum dots. (c) 2000 The American Physical Society.

  4. Suppression of low-frequency charge noise in gates-defined GaAs quantum dots

    SciTech Connect (OSTI)

    You, Jie; Li, Hai-Ou E-mail: gpguo@ustc.edu.cn; Wang, Ke; Cao, Gang; Song, Xiang-Xiang; Xiao, Ming; Guo, Guo-Ping E-mail: gpguo@ustc.edu.cn

    2015-12-07

    To reduce the charge noise of a modulation-doped GaAs/AlGaAs quantum dot, we have fabricated shallow-etched GaAs/AlGaAs quantum dots using the wet-etching method to study the effects of two-dimensional electron gas (2DEG) underneath the metallic gates. The low-frequency 1/f noise in the Coulomb blockade region of the shallow-etched quantum dot is compared with a non-etched quantum dot on the same wafer. The average values of the gate noise are approximately 0.5 μeV in the shallow-etched quantum dot and 3 μeV in the regular quantum dot. Our results show the quantum dot low-frequency charge noise can be suppressed by the removal of the 2DEG underneath the metallic gates, which provides an architecture for noise reduction.

  5. The emission wavelength dependent photoluminescence lifetime of the N-doped graphene quantum dots

    SciTech Connect (OSTI)

    Deng, Xingxia; Sun, Jing; Yang, Siwei; Ding, Guqiao; Shen, Hao; Zhou, Wei; Lu, Jian; Wang, Zhongyang

    2015-12-14

    Aromatic nitrogen doped graphene quantum dots were investigated by steady-state and time-resolved photoluminescence (PL) techniques. The PL lifetime was found to be dependent on the emission wavelength and coincident with the PL spectrum, which is different from most semiconductor quantum dots and fluorescent dyes. This result shows the synergy and competition between the quantum confinement effect and edge functional groups, which may have the potential to guide the synthesis and expand the applications of graphene quantum dots.

  6. NREL Certifies First All-Quantum-Dot Photovoltaic Cell; Demonstrates Stability, Performance (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-02-01

    Researchers at the National Renewable Energy Laboratory (NREL) have certified the first all-quantum-dot photovoltaic cell, which was based on lead sulfide and demonstrated reasonable quantum dot solar cell performance for an initial efficiency measurement along with good stability. The certified open-circuit voltage of the quantum dot cell is greater than that possible from bulk lead sulfide because of quantum confinement.

  7. Approaches to Future Generation Photovoltaics and Solar Fuels: Quantum Dots, Arrays, and Quantum Dot Solar Cells

    SciTech Connect (OSTI)

    Semonin, O.; Luther, J.; Beard, M.; Johnson, J.; Gao, J.; Nozik, A.

    2012-01-01

    One potential, long-term approach to more efficient and lower cost future generation solar cells for solar electricity and solar fuels is to utilize the unique properties of quantum dots (QDs) to control the relaxation pathways of excited states to enhance multiple exciton generation (MEG). We have studied MEG in close-packed PbSe QD arrays where the QDs are electronically coupled in the films and thus exhibit good transport while still maintaining quantization and MEG. We have developed simple, all-inorganic solution-processable QD solar cells that produce large short-circuit photocurrents and power conversion efficiencies above 5% via nanocrystalline p-n junctions. These solar cells show QYs for photocurrent that exceed 100% in the photon energy regions where MEG is possible; the photocurrent MEG QYs as a function of photon energy match those determined via time-resolved spectroscopy Recent analyses of the major effect of MEG combined with solar concentration on the conversion efficiency of solar cells will also be discussed.

  8. Quasi-periodic quantum dot arrays produced by electrochemical synthesis

    SciTech Connect (OSTI)

    Bandyopadhyay, S.; Miller, A.E.; Yue, D.F.; Banerjee, G.; Ricker, R.E.; Jones, S.; Eastman, J.A.; Baugher, E.; Chandrasekhar, M.

    1994-06-01

    We discuss a ``gentle`` electrochemical technique for fabricating quasi-periodic quantum dot arrays. The technique exploits a self-organizing phenomenon to produce quasi-periodic arrangement of dots and provides excellent control over dot size and interdot spacing. Unlike conventional nanolithography, it does not cause radiation damage to the structures during exposure to pattern delineating beams (e-beam, ion-beam or x-ray). Moreover, it does not require harsh processing steps like reactive ion etching, offers a minimum feature size of {approximately}40 {angstrom}, allows the fabrication of structures on nonplanar surfaces (e.g. spherical or cylindrical substrates), is amenable to mass production (millions of wafers can be processed simultaneously) and is potentially orders of magnitude cheaper than conventional nanofabrication. In this paper, we describe our initial results and show the promise of this technique for low-cost and high-yield nanosynthesis.

  9. Observation of the Kondo effect in a spin-3/2 hole quantum dot (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Observation of the Kondo effect in a spin-3/2 hole quantum dot Citation Details In-Document Search Title: Observation of the Kondo effect in a spin-3/2 hole quantum dot We report the observation of the Kondo effect in a spin-3/2 hole quantum dot formed near pinch-off in a GaAs quantum wire. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the zero-bias peak in the differential conductance splits an in-plane magnetic field and the

  10. Charging dynamics of a floating gate transistor with site-controlled quantum dots

    SciTech Connect (OSTI)

    Maier, P. Hartmann, F.; Emmerling, M.; Schneider, C.; Hfling, S.; Kamp, M.; Worschech, L.

    2014-08-04

    A quantum dot memory based on a GaAs/AlGaAs quantum wire with site-controlled InAs quantum dots was realized by means of molecular beam epitaxy and etching techniques. By sampling of different gate voltage sweeps for the determination of charging and discharging thresholds, it was found that discharging takes place at short time scales of ?s, whereas several seconds of waiting times within a distinct negative gate voltage range were needed to charge the quantum dots. Such quantum dot structures have thus the potential to implement logic functions comprising charge and time dependent ingredients such as counting of signals or learning rules.

  11. Simulation of quantum dots size and spacing effect for intermediate band solar cell application based on InAs quantum dots arrangement in GaAs

    SciTech Connect (OSTI)

    Hendra, P. I. B. Rahayu, F. Darma, Y.

    2014-03-24

    Intermediate band solar cell (IBSC) has become a promising technology in increasing solar cell efficiency. In this work we compare absorption coefficient profile between InAs quantum dots with GaAs bulk. We calculate the efficiency of GaAs bulk and GaAs doped with 2, 5, and 10 nm InAs quantum dot. Effective distances in quantum dot arrangement based on electron tunneling consideration were also calculated. We presented a simple calculation method with low computing power demand. Results showed that arrangement of quantum dot InAs in GaAs can increase solar cell efficiency from 23.9 % initially up to 60.4%. The effective distance between two quantum dots was found 2 nm in order to give adequate distance to prevent electron tunneling and wave functions overlap.

  12. Induced spin-accumulation and spin-polarization in a quantum-dot ring by using magnetic quantum dots and Rashba spin-orbit effect

    SciTech Connect (OSTI)

    Eslami, L., E-mail: Leslami@iust.ac.ir; Faizabadi, E. [School of Physics, Iran University of Science and Technology, Tehran 16846 (Iran, Islamic Republic of)

    2014-05-28

    The effect of magnetic contacts on spin-dependent electron transport and spin-accumulation in a quantum ring, which is threaded by a magnetic flux, is studied. The quantum ring is made up of four quantum dots, where two of them possess magnetic structure and other ones are subjected to the Rashba spin-orbit coupling. The magnetic quantum dots, referred to as magnetic quantum contacts, are connected to two external leads. Two different configurations of magnetic moments of the quantum contacts are considered; the parallel and the anti-parallel ones. When the magnetic moments are parallel, the degeneracy between the transmission coefficients of spin-up and spin-down electrons is lifted and the system can be adjusted to operate as a spin-filter. In addition, the accumulation of spin-up and spin-down electrons in non-magnetic quantum dots are different in the case of parallel magnetic moments. When the intra-dot Coulomb interaction is taken into account, we find that the electron interactions participate in separation between the accumulations of electrons with different spin directions in non-magnetic quantum dots. Furthermore, the spin-accumulation in non-magnetic quantum dots can be tuned in the both parallel and anti-parallel magnetic moments by adjusting the Rashba spin-orbit strength and the magnetic flux. Thus, the quantum ring with magnetic quantum contacts could be utilized to create tunable local magnetic moments which can be used in designing optimized nanodevices.

  13. Resonant scattering of surface plasmon polaritons by dressed quantum dots

    SciTech Connect (OSTI)

    Huang, Danhong; Cardimona, Dave; Easter, Michelle; Gumbs, Godfrey; Maradudin, A. A.; Lin, Shawn-Yu; Zhang, Xiang

    2014-06-23

    The resonant scattering of surface plasmon-polariton waves (SPP) by embedded semiconductor quantum dots above the dielectric/metal interface is explored in the strong-coupling regime. In contrast to non-resonant scattering by a localized dielectric surface defect, a strong resonant peak in the spectrum of the scattered field is predicted that is accompanied by two side valleys. The peak height depends nonlinearly on the amplitude of SPP waves, reflecting the feedback dynamics from a photon-dressed electron-hole plasma inside the quantum dots. This unique behavior in the scattered field peak strength is correlated with the occurrence of a resonant dip in the absorption spectrum of SPP waves due to the interband photon-dressing effect. Our result on the scattering of SPP waves may be experimentally observable and applied to spatially selective illumination and imaging of individual molecules.

  14. Facile synthesis and photoluminescence mechanism of graphene quantum dots

    SciTech Connect (OSTI)

    Yang, Ping; Zhou, Ligang; Zhang, Shenli; Pan, Wei Shen, Wenzhong; Wan, Neng

    2014-12-28

    We report a facile hydrothermal synthesis of intrinsic fluorescent graphene quantum dots (GQDs) with two-dimensional morphology. This synthesis uses glucose, concentrate sulfuric acid, and deionized water as reagents. Concentrated sulfuric acid is found to play a key role in controlling the transformation of as-prepared hydrothermal products from amorphous carbon nanodots to well-crystallized GQDs. These GQDs show typical absorption characteristic for graphene, and have nearly excitation-independent ultraviolet and blue intrinsic emissions. Temperature-dependent PL measurements have demonstrated strong electron-electron scattering and electron-phonon interactions, suggesting a similar temperature behavior of GQDs to inorganic semiconductor quantum dots. According to optical studies, the ultraviolet emission is found to originate from the recombination of electron-hole pairs localized in the C=C bonds, while the blue emission is from the electron transition of sp{sup 2} domains.

  15. Exploring Competing Kinetic Processes in Quantum Dots Linked to Electrode

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Surfaces | MIT-Harvard Center for Excitonics Competing Kinetic Processes in Quantum Dots Linked to Electrode Surfaces March 14, 2012 at 2:30pm/4-349 Mark Hybertsen Brookhaven National Laboratory, Columbia University Mark_Hybertsen001_000 Abstract: Exploiting the unique properties of nanostructured chromophores for light harvesting applications relies on the balance between competing kinetic processes including energy transfer, carrier relaxation and carrier tunneling. In the first part of

  16. Quantum Dot Tracers for Use in Engineered Geothermal

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Quantum Dot Tracers for Use in Engineered Geothermal Systems DE-EE0002768 Peter Rose, EGI/University of Utah Michael Bartl, Department of Chemistry at the University of Utah Paul Reimus, Los Alamos National Lab Project Officer: Lauren Boyd Total Project Funding: $1,238,499 April 23, 2013 This presentation does not contain any proprietary confidential, or otherwise restricted information. 2 | US DOE Geothermal Office eere.energy.gov Relevance/Impact of Research The objective of this project is to

  17. Computational models for the berry phase in semiconductor quantum dots

    SciTech Connect (OSTI)

    Prabhakar, S. Melnik, R. V. N.; Sebetci, A.

    2014-10-06

    By developing a new model and its finite element implementation, we analyze the Berry phase low-dimensional semiconductor nanostructures, focusing on quantum dots (QDs). In particular, we solve the Schrdinger equation and investigate the evolution of the spin dynamics during the adiabatic transport of the QDs in the 2D plane along circular trajectory. Based on this study, we reveal that the Berry phase is highly sensitive to the Rashba and Dresselhaus spin-orbit lengths.

  18. Optical, electronic, and structural properties of uncoupled and close-packed arrays of InP quantum dots

    SciTech Connect (OSTI)

    Micic, O.I.; Jones, K.M.; Cahill, A.; Nozik, A.J.

    1998-12-03

    Solid films consisting of close-packed arrays of InP quantum dots have been prepared by slowly evaporating colloidal solutions of InP quantum dots. The diameters of the quantum dots were controlled to be between about 30 to 60 {angstrom}; size-selective precipitation yielded a size distribution of about 10% about the mean diameter. The arrays show regions of hexagonal order, as well as disordered regions. Oxide layers can form irreversibly on the quantum dot surface and limit the effectiveness of the size-selective precipitation. Photoluminescence spectra obtained from close-packed films of InP quantum dots formed from quantum dots with a single mean diameter and from a mixture of two quantum dot sizes show that energy transfer occurs from the photoexcited smaller quantum dots to the larger quantum dots. The efficiency of this energy transfer process is high.

  19. Density functional calculation of the structural and electronic properties of germanium quantum dots

    SciTech Connect (OSTI)

    Anas, M. M.; Gopir, G.

    2015-04-24

    We apply first principles density functional computational methods to study the structures, densities of states (DOS), and higher occupied molecular orbital (HOMO) lowest unoccupied molecular orbital (LUMO) gaps of selected free-standing Ge semiconductor quantum dots up to 1.8nm. Our calculations are performed using numerical atomic orbital approach where linear combination of atomic orbital was applied. The surfaces of the quantum dots was passivized by hydrogen atoms. We find that surface passivation does affect the electronic properties associated with the changes of surface state, electron localization, and the energy gaps of germanium nanocrystals as well as the confinement of electrons inside the quantum dots (QDs). Our study shows that the energy gaps of germanium quantum dots decreases with the increasing dot diameter. The size-dependent variations of the computed HOMO-LUMO gaps in our quantum dots model were found to be consistent with the effects of quantum confinement reported in others theoretical and experimental calculation.

  20. Increased InAs quantum dot size and density using bismuth as a surfactant

    SciTech Connect (OSTI)

    Dasika, Vaishno D.; Krivoy, E. M.; Nair, H. P.; Maddox, S. J.; Park, K. W.; Yu, E. T.; Bank, S. R.; Jung, D.; Lee, M. L.

    2014-12-22

    We have investigated the growth of self-assembled InAs quantum dots using bismuth as a surfactant to control the dot size and density. We find that the bismuth surfactant increases the quantum dot density, size, and uniformity, enabling the extension of the emission wavelength with increasing InAs deposition without a concomitant reduction in dot density. We show that these effects are due to bismuth acting as a reactive surfactant to kinetically suppress the surface adatom mobility. This mechanism for controlling quantum dot density and size has the potential to extend the operating wavelength and enhance the performance of various optoelectronic devices.

  1. Magneto-optical absorption in semiconducting spherical quantum dots: Influence of the dot-size, confining potential, and magnetic field

    SciTech Connect (OSTI)

    Kushwaha, Manvir S.

    2014-12-15

    Semiconducting quantum dots – more fancifully dubbed artificial atoms – are quasi-zero dimensional, tiny, man-made systems with charge carriers completely confined in all three dimensions. The scientific quest behind the synthesis of quantum dots is to create and control future electronic and optical nanostructures engineered through tailoring size, shape, and composition. The complete confinement – or the lack of any degree of freedom for the electrons (and/or holes) – in quantum dots limits the exploration of spatially localized elementary excitations such as plasmons to direct rather than reciprocal space. Here we embark on a thorough investigation of the magneto-optical absorption in semiconducting spherical quantum dots characterized by a confining harmonic potential and an applied magnetic field in the symmetric gauge. This is done within the framework of Bohm-Pines’ random-phase approximation that enables us to derive and discuss the full Dyson equation that takes proper account of the Coulomb interactions. As an application of our theoretical strategy, we compute various single-particle and many-particle phenomena such as the Fock-Darwin spectrum; Fermi energy; magneto-optical transitions; probability distribution; and the magneto-optical absorption in the quantum dots. It is observed that the role of an applied magnetic field on the absorption spectrum is comparable to that of a confining potential. Increasing (decreasing) the strength of the magnetic field or the confining potential is found to be analogous to shrinking (expanding) the size of the quantum dots: resulting into a blue (red) shift in the absorption spectrum. The Fermi energy diminishes with both increasing magnetic-field and dot-size; and exhibits saw-tooth-like oscillations at large values of field or dot-size. Unlike laterally confined quantum dots, both (upper and lower) magneto-optical transitions survive even in the extreme instances. However, the intra-Landau level

  2. Formation of long-range ordered quantum dots arrays in amorphous matrix by ion beam irradiation

    SciTech Connect (OSTI)

    Buljan, M.; Bogdanovic-Radovic, I.; Karlusic, M.; Desnica, U. V.; Radic, N.; Dubcek, P.; Drazic, G.; Salamon, K.; Bernstorff, S.; Holy, V.

    2009-08-10

    We demonstrate the production of a well ordered three-dimensional array of Ge quantum dots in amorphous silica matrix. The ordering is achieved by ion beam irradiation and annealing of a multilayer film. Structural analysis shows that quantum dots nucleate along the direction of the ion beam used for irradiation, while the mutual distance of the quantum dots is determined by the diffusion properties of the multilayer material rather than the distances between traces of ions that are used for irradiation.

  3. R&D Magazine: Windows into Solar Power Sources with Quantum Dots

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    R&D Magazine: Windows into Solar Power Sources with Quantum Dots A luminescent solar concentrator is an emerging sunlight harvesting technology that has the potential to disrupt ...

  4. Excited-state spectroscopy of InP quantum dots

    SciTech Connect (OSTI)

    Bertram, D.; Micic, O.I.; Nozik, A.J.

    1998-02-01

    We have measured low-temperature size-selective photoluminescence excitation spectra of high-quality InP quantum dots prepared by collodial chemistry. A set of samples with mean emission energies in the range from 1.9 to 2.2 eV was investigated. All samples have a size distribution of about 10{percent}, resulting in an inhomogeneously broadened photoluminescence lineshape. Due to the finite size distribution, spectra were collected at different detection wavelengths to reveal the energies of the excited excitonic states. The size dependence of the quantization energies of InP nanoparticles was determined by measuring photoluminescence excitation at different detection energies within one sample. Up to eight excited-state transitions in a set of seven samples were observed, as the estimated quantum dot size was scanned from 1.8 to 4.0 nm. A comparison of the observed peaks with a six-band {bold k}{center_dot}{bold p} calculation is given. In contrast to the successful interpretation in the case of CdSe, no agreement between the calculated and the observed excited-state energies is achieved. {copyright} {ital 1998} {ital The American Physical Society}

  5. Excited-State Relaxation in PbSe Quantum Dots

    SciTech Connect (OSTI)

    An, J. M.; Califano, M.; Franceschetti, A.; Zunger, A.

    2008-01-01

    In solids the phonon-assisted, nonradiative decay from high-energy electronic excited states to low-energy electronic excited states is picosecond fast. It was hoped that electron and hole relaxation could be slowed down in quantum dots, due to the unavailability of phonons energy matched to the large energy-level spacings ('phonon-bottleneck'). However, excited-state relaxation was observed to be rather fast ({le}1 ps) in InP, CdSe, and ZnO dots, and explained by an efficient Auger mechanism, whereby the excess energy of electrons is nonradiatively transferred to holes, which can then rapidly decay by phonon emission, by virtue of the densely spaced valence-band levels. The recent emergence of PbSe as a novel quantum-dot material has rekindled the hope for a slow down of excited-state relaxation because hole relaxation was deemed to be ineffective on account of the widely spaced hole levels. The assumption of sparse hole energy levels in PbSe was based on an effective-mass argument based on the light effective mass of the hole. Surprisingly, fast intraband relaxation times of 1-7 ps were observed in PbSe quantum dots and have been considered contradictory with the Auger cooling mechanism because of the assumed sparsity of the hole energy levels. Our pseudopotential calculations, however, do not support the scenario of sparse hole levels in PbSe: Because of the existence of three valence-band maxima in the bulk PbSe band structure, hole energy levels are densely spaced, in contradiction with simple effective-mass models. The remaining question is whether the Auger decay channel is sufficiently fast to account for the fast intraband relaxation. Using the atomistic pseudopotential wave functions of Pb{sub 2046}Se{sub 2117} and Pb{sub 260}Se{sub 249} quantum dots, we explicitly calculated the electron-hole Coulomb integrals and the P {yields} S electron Auger relaxation rate. We find that the Auger mechanism can explain the experimentally observed P {yields} S

  6. Quantum Dot Solar Cells with Multiple Exciton Generation

    SciTech Connect (OSTI)

    Hanna, M. C.; Beard, M. C.; Johnson, J. C.; Murphy, J.; Ellingson, R. J.; Nozik, A. J.

    2005-11-01

    We have measured the quantum yield of the multiple exciton generation (MEG) process in quantum dots (QDs) of the lead-salt semiconductor family (PbSe, PbTe, and PbS) using fs pump-probe transient absorption measurements. Very high quantum yields (up to 300%) for charge carrier generation from MEG have been measured in all of the Pb-VI QDs. We have calculated the potential maximum performance of various MEG QD solar cells in the detailed balance limit. We examined a two-cell tandem PV device with singlet fission (SF), QD, and normal dye (N) absorbers in the nine possible series-connected combinations to compare the tandem combinations and identify the combinations with the highest theoretical efficiency. We also calculated the maximum efficiency of an idealized single-gap MEG QD solar cell with M multiplications and its performance under solar concentration.

  7. Sandia Develops a Synthesis of Quantum Dots that Increases the Quantum

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Yield to 95.5% Develops a Synthesis of Quantum Dots that Increases the Quantum Yield to 95.5% - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization

  8. Probing the size and environment induced phase transformation in CdSe quantum dots

    SciTech Connect (OSTI)

    Karakoti, Ajay S.; Sanghavi, Shail P.; Nachimuthu, Ponnusamy; Yang, Ping; Thevuthasan, Suntharampillai

    2011-11-17

    The structural and electronic properties of CdSe quantum dots in toluene and drop-casted on Si wafer were investigated by in-situ micro X-ray diffraction, X-ray photoelectron spectroscopy and UV-Vis absorption and emission spectroscopy. The in-situ micro diffraction data show that the CdSe quantum dots capped with TOPO or hexadecylamine (HDA) in toluene exhibit predominantly wurtzite crystal structure, which undergoes a phase transformation to zinc blende crystal structure following drop casting on Si and this phase transition increases with decreasing the size of the CdSe quantum dots. Decreasing the size of quantum dots also increases the Se vacancies that facilitate the phase transformation. The X-ray photoelectron spectra show a systematic increase in the core level binding energies of Cd 3d and Se 3d, the band gap and the Cd/Se ratio as the size of the quantum dots decreases from 6.6nm to 2.1nm. This is attributed to the quantum confinement of CdSe crystallites by the capping ligands in toluene which increases with decreasing the size of the quantum dots. However, drop-casting quantum dots on Si alter the density and arrangement of capping ligands and solvent molecules on the quantum dots which causes significant phase transformation.

  9. Grazing-incidence small-angle X-ray scattering: application to the study of quantum dot lattices

    SciTech Connect (OSTI)

    Buljan, Maja Radi?, Nikola; Bernstorff, Sigrid; Drai?, Goran; Bogdanovi?-Radovi?, Iva; Hol, Vclav

    2012-01-01

    The modelling of grazing-incidence small-angle X-ray scattering (GISAXS) from three-dimensional quantum dot lattices is described. The ordering of quantum dots in three-dimensional quantum dot lattices is investigated by grazing-incidence small-angle X-ray scattering (GISAXS). Theoretical models describing GISAXS intensity distributions for three general classes of lattices of quantum dots are proposed. The classes differ in the type of disorder of the positions of the quantum dots. The models enable full structure determination, including lattice type, lattice parameters, the type and degree of disorder in the quantum dot positions and the distributions of the quantum dot sizes. Applications of the developed models are demonstrated using experimentally measured data from several types of quantum dot lattices formed by a self-assembly process.

  10. Computational modeling of electrophotonics nanomaterials: Tunneling in double quantum dots

    SciTech Connect (OSTI)

    Vlahovic, Branislav Filikhin, Igor

    2014-10-06

    Single electron localization and tunneling in double quantum dots (DQD) and rings (DQR) and in particular the localized-delocalized states and their spectral distributions are considered in dependence on the geometry of the DQDs (DQRs). The effect of violation of symmetry of DQDs geometry on the tunneling is studied in details. The cases of regular and chaotic geometries are considered. It will be shown that a small violation of symmetry drastically affects localization of electron and that anti-crossing of the levels is the mechanism of tunneling between the localized and delocalized states in DQRs.

  11. Photoluminescence-enhanced biocompatible quantum dots by phospholipid functionalization

    SciTech Connect (OSTI)

    Shi Yunfeng; He Peng Zhu Xinyuan

    2008-10-02

    A simple two-step strategy using phospholipid (PPL) to functionalize core/shell CdSe/ZnS quantum dots (QDs) has been described. The experimental data show that the use of S-H terminated PPL results not only in the high colloidal stability of core/shell CdSe/ZnS QDs in the aqueous phase, but also in the significant enhancement of photoluminescence. The degree of the enhancement is a function of the PPL-CdSe/ZnS QDs sample concentration. These results might be promising for future biological platform in new devices ranging from photovoltaic cells to biosensors and other devices.

  12. Photocurrent extraction efficiency in colloidal quantum dot photovoltaics

    SciTech Connect (OSTI)

    Kemp, K. W.; Wong, C. T. O.; Hoogland, S. H.; Sargent, E. H.

    2013-11-18

    The efficiency of photocurrent extraction was studied directly inside operating Colloidal Quantum Dot (CQD) photovoltaic devices. A model was derived from first principles for a thin film p-n junction with a linearly spatially dependent electric field. Using this model, we were able to clarify the origins of recent improvement in CQD solar cell performance. From current-voltage diode characteristics under 1 sun conditions, we extracted transport lengths ranging from 39 nm to 86 nm for these materials. Characterization of the intensity dependence of photocurrent extraction revealed that the dominant loss mechanism limiting the transport length is trap-mediated recombination.

  13. Electronic structure of nanocrystal quantum-dot quantumwells

    SciTech Connect (OSTI)

    Schrier, Joshua; Wang, Lin-Wang

    2006-06-26

    The electronic states of CdS/CdSe/CdS colloidal nanocrystalquantum-dot quantum wells are studied by large-scale pseudopotentiallocal density approximation (LDA) calculations. Using this approach, wedetermine the effects of CdS core size, CdSe well thickness, and CdSshell thickness on the band-edge wave functions, band-gap, andelectron-hole Coulomb interactions. We find the conduction-band wavefunction to be less confined to the CdSe well layer than predicted by kcdot p effective-mass theory, which accounts for the previous underestimation of the electron g factor.

  14. Activation of molecular catalysts using semiconductor quantum dots

    DOE Patents [OSTI]

    Meyer, Thomas J.; Sykora, Milan; Klimov, Victor I.

    2011-10-04

    Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

  15. Water-soluble luminescent quantum dots and biomolecular conjugates thereof and related compositions and method of use

    DOE Patents [OSTI]

    Nie, Shuming; Chan, Warren C. W.; Emory, Steven R.

    2002-01-01

    The present invention provides a water-soluble luminescent quantum dot, a biomolecular conjugate thereof and a composition comprising such a quantum dot or conjugate. Additionally, the present invention provides a method of obtaining a luminescent quantum dot, a method of making a biomolecular conjugate thereof, and methods of using a biomolecular conjugate for ultrasensitive nonisotopic detection in vitro and in vivo.

  16. Water-soluble luminescent quantum dots and biomolecular conjugates thereof and related compositions and methods of use

    DOE Patents [OSTI]

    Nie, Shuming; Chan, Warren C. W.; Emory, Stephen

    2007-03-20

    The present invention provides a water-soluble luminescent quantum dot, a biomolecular conjugate thereof and a composition comprising such a quantum dot or conjugate. Additionally, the present invention provides a method of obtaining a luminescent quantum dot, a method of making a biomolecular conjugate thereof, and methods of using a biomolecular conjugate for ultrasensitive nonisotopic detection in vitro and in vivo.

  17. Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

    DOE Patents [OSTI]

    Forrest, Stephen R.; Wei, Guodan

    2010-07-06

    A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

  18. Charge-transfer dynamics in multilayered PbS and PbSe quantum dot architectures

    SciTech Connect (OSTI)

    Xu, F.; Ma, X.; Haughn, C. R.; Doty, M. F.; Cloutier, S. G.

    2014-02-03

    We demonstrate control of the charge transfer process in PbS and PbSe quantum dot assemblies. We first demonstrate efficient charge transfer from donor quantum dots to acceptor quantum dots in a multi-layer PbSe cascade structure. Then, we assemble type-I and type-II heterostructures using both PbS and PbSe quantum dots via careful control of the band alignment. In type-I structures, photo-generated carriers are transferred and localized in the smaller bandgap (acceptor) quantum dots, resulting in a significant luminescence enhancement. In contrast, a significant luminescence quenching and shorter emission lifetime confirms an efficient separation of photo-generated carriers in the type-II architecture.

  19. Applicability of the {bold k}{center_dot}{bold p} method to the electronic structure of quantum dots

    SciTech Connect (OSTI)

    Fu, H.; Wang, L.; Zunger, A.

    1998-04-01

    The {bold k}{center_dot}{bold p} method has become the {open_quotes}standard model{close_quotes} for describing the electronic structure of nanometer-size quantum dots. In this paper we perform parallel {bold k}{center_dot}{bold p} (6{times}6 and 8{times}8) and direct-diagonalization pseudopotential studies on spherical quantum dots of an ionic material{emdash}CdSe, and a covalent material{emdash}InP. By using an equivalent input in both approaches, i.e., starting from a given atomic pseudopotential and deriving from it the Luttinger parameters in {bold k}{center_dot}{bold p} calculation, we investigate the effect of the different underlying wave-function representations used in {bold k}{center_dot}{bold p} and in the more exact pseudopotential direct diagonalization. We find that (i) the 6{times}6{bold k}{center_dot}{bold p} envelope function has a distinct (odd or even) parity, while atomistic wave function is parity-mixed. The 6{times}6{bold k}{center_dot}{bold p} approach produces an incorrect order of the highest valence states for both InP and CdSe dots: the p-like level is above the s-like level. (ii) It fails to reveal that the second conduction state in small InP dots is folded from the L point in the Brillouin zone. Instead, all states in {bold k}{center_dot}{bold p} are described as {Gamma}-like. (iii) The {bold k}{center_dot}{bold p} overestimates the confinement energies of both valence states and conduction states. A wave-function projection analysis shows that the principal reasons for these {bold k}{center_dot}{bold p} errors in dots are (a) use of restricted basis set, and (b) incorrect {ital bulk} dispersion relation. Error (a) can be reduced only by increasing the number of basis functions. Error (b) can be reduced by altering the {bold k}{center_dot}{bold p} implementation so as to bend upwards the second lowest bulk band, and to couple the conduction band into the s-like dot valence state. Our direct diagonalization approach provides an

  20. Colloidal quantum dot solar cells on curved and flexible substrates

    SciTech Connect (OSTI)

    Kramer, Illan J.; Moreno-Bautista, Gabriel; Minor, James C.; Kopilovic, Damir; Sargent, Edward H.

    2014-10-20

    Colloidal quantum dots (CQDs) are semiconductor nanocrystals synthesized with, processed in, and deposited from the solution phase, potentially enabling low-cost, facile manufacture of solar cells. Unfortunately, CQD solar cell reports, until now, have only explored batch-processing methods—such as spin-coating—that offer limited capacity for scaling. Spray-coating could offer a means of producing uniform colloidal quantum dot films that yield high-quality devices. Here, we explore the versatility of the spray-coating method by producing CQD solar cells in a variety of previously unexplored substrate arrangements. The potential transferability of the spray-coating method to a roll-to-roll manufacturing process was tested by spray-coating the CQD active layer onto six substrates mounted on a rapidly rotating drum, yielding devices with an average power conversion efficiency of 6.7%. We further tested the manufacturability of the process by endeavoring to spray onto flexible substrates, only to find that spraying while the substrate was flexed was crucial to achieving champion performance of 7.2% without compromise to open-circuit voltage. Having deposited onto a substrate with one axis of curvature, we then built our CQD solar cells onto a spherical lens substrate having two axes of curvature resulting in a 5% efficient device. These results show that CQDs deposited using our spraying method can be integrated to large-area manufacturing processes and can be used to make solar cells on unconventional shapes.

  1. Spectral and dynamical properties of single excitons, biexcitons, and trions in cesium-lead-halide perovskite quantum dots

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Makarov, Nikolay Sergeevich; Guo, Shaojun; Isaienko, Oleksandr; Liu, Wenyong; Robel, Istvan; Klimov, Victor Ivanovich

    2016-02-16

    Organic–inorganic lead-halide perovskites have been the subject of recent intense interest due to their unusually strong photovoltaic performance. A new addition to the perovskite family is all-inorganic Cs–Pb-halide perovskite nanocrystals, or quantum dots, fabricated via a moderate-temperature colloidal synthesis. While being only recently introduced to the research community, these nanomaterials have already shown promise for a range of applications from color-converting phosphors and light-emitting diodes to lasers, and even room-temperature single-photon sources. Knowledge of the optical properties of perovskite quantum dots still remains vastly incomplete. Here we apply various time-resolved spectroscopic techniques to conduct a comprehensive study of spectral andmore » dynamical characteristics of single- and multiexciton states in CsPbX3 nanocrystals with X being either Br, I, or their mixture. Specifically, we measure exciton radiative lifetimes, absorption cross-sections, and derive the degeneracies of the band-edge electron and hole states. We also characterize the rates of intraband cooling and nonradiative Auger recombination and evaluate the strength of exciton–exciton coupling. The overall conclusion of this work is that spectroscopic properties of Cs–Pb-halide quantum dots are largely similar to those of quantum dots of more traditional semiconductors such as CdSe and PbSe. At the same time, we observe some distinctions including, for example, an appreciable effect of the halide identity on radiative lifetimes, considerably shorter biexciton Auger lifetimes, and apparent deviation of their size dependence from the “universal volume scaling” previously observed for many traditional nanocrystal systems. The high efficiency of Auger decay in perovskite quantum dots is detrimental to their prospective applications in light-emitting devices and lasers. Furthermore, this points toward the need for the development of approaches for effective

  2. Engineering the hole confinement for CdTe-based quantum dot molecules

    SciTech Connect (OSTI)

    Kłopotowski, Ł. Wojnar, P.; Kret, S.; Fronc, K.; Wojtowicz, T.; Karczewski, G.

    2015-06-14

    We demonstrate an efficient method to engineer the quantum confinement in a system of two quantum dots grown in a vertical stack. We achieve this by using materials with a different lattice constant for the growth of the outer and inner barriers. We monitor the resulting dot morphology with transmission electron microscopy studies and correlate the results with ensemble quantum dot photoluminescence. Furthermore, we embed the double quantum dots into diode structures and study photoluminescence as a function of bias voltage. We show that in properly engineered structures, it is possible to achieve a resonance of the hole states by tuning the energy levels with electric field. At the resonance, we observe signatures of a formation of a molecular state, hybridized over the two dots.

  3. Effect of swift heavy ion irradiation on bare and coated ZnS quantum dots

    SciTech Connect (OSTI)

    Chowdhury, S. Hussain, A.M.P.; Ahmed, G.A.; Singh, F.; Avasthi, D.K.; Choudhury, A.

    2008-12-01

    The present study compares structural and optical modifications of bare and silica (SiO{sub 2}) coated ZnS quantum dots under swift heavy ion (SHI) irradiation. Bare and silica coated ZnS quantum dots were prepared following an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. X-ray diffraction (XRD) and transmission electron microscopy (TEM) study of the samples show the formation of almost spherical ZnS quantum dots. The UV-Vis absorption spectra reveal blue shift relative to bulk material in absorption energy while photoluminescence (PL) spectra suggests that surface state and near band edge emissions are dominating in case of bare and coated samples, respectively. Swift heavy ion irradiation of the samples was carried out with 160 MeV Ni{sup 12+} ion beam with fluences 10{sup 12} to 10{sup 13} ions/cm{sup 2}. Size enhancement of bare quantum dots after irradiation has been indicated in XRD and TEM analysis of the samples which has also been supported by optical absorption spectra. However similar investigations on irradiated coated quantum dots revealed little change in quantum dot size and emission. The present study thus shows that the coated ZnS quantum dots are stable upon SHI irradiation compared to the bare one.

  4. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    SciTech Connect (OSTI)

    Pinto, S. R. C.; Ramos, M. M. D.; Gomes, M. J. M.; Buljan, M.; Chahboun, A.; Roldan, M. A.; Molina, S. I.; Bernstorff, S.; Varela, M.; Pennycook, S. J.; Barradas, N. P.; Alves, E.

    2012-04-01

    In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

  5. Approaches to Future Generation Photovoltaics and Solar Fuels: Multiple Exciton Generation in Quantum Dots, Quantum Dot Arrays, Molecular Singlet Fission, and Quantum Dot Solar Cells

    SciTech Connect (OSTI)

    Nozik, A. J.; Beard, M. C.; Johnson, J. C.; Hanna, M. C.; Luther, J. M.; Midgett, A.; Semonin, O.; Michel, J.

    2012-01-01

    One potential, long-term approach to more efficient future generation solar cells is to utilize the unique properties of quantum dots (QDs) and unique molecular chromophores to control the relaxation pathways of excited states to produce enhanced conversion efficiency through efficient multiple electron-hole pair generation from single photons . We have observed efficient multiple exciton generation (MEG) in PbSe, PbS, PbTe, and Si QDs and efficient singlet fission (SF) in molecules that satisfy specific requirements for their excited state energy level structure to achieve carrier multiplication. We have studied MEG in close-packed QD arrays where the QDs are electronically coupled in the films and thus exhibit good transport while still maintaining quantization and MEG. We have developed simple, all-inorganic QD solar cells that produce large short-circuit photocurrents and power conversion efficiencies in the 3-5% range via both nanocrystalline Schottky junctions and nanocrystalline p-n junctions. These solar cells also show QYs for photocurrent that exceed 100% in the photon energy regions where MEG is possible; the photocurrent MEG QYs as a function of photon energy match those determined via time-resolved spectroscopy. We have also observed very efficient SF in thin films of molecular crystals of 1,3 diphenylisobenzofuran with quantum yields of 200% at the optimum SF threshold of 2Eg (HOMO-LUMO for S{sub 0}-S{sub 1}), reflecting the creation of two excited triplet states from the first excited singlet state. Various possible configurations for novel solar cells based on MEG in QDs and SF in molecules that could produce high conversion efficiencies will be presented, along with progress in developing such new types of solar cells. Recent analyses of the effect of MEG or SF combined with solar concentration on the conversion efficiency of solar cells will be discussed.

  6. Red light-emitting diodes based on InP/GaP quantum dots

    SciTech Connect (OSTI)

    Hatami, F.; Lordi, V.; Harris, J.S.; Kostial, H.; Masselink, W.T.

    2005-05-01

    The growth, fabrication, and device characterization of InP quantum-dot light-emitting diodes based on GaP are described and discussed. The diode structures are grown on gallium phosphide substrates using gas-source molecular-beam epitaxy and the active region of the diode consists of self-assembled InP quantum dots embedded in a GaP matrix. Red electroluminescence originating from direct band-gap emission from the InP quantum dots is observed at low temperatures.With increasing temperature, however, the emission line shifts to the longer wavelength. The emission light is measured to above room temperature.

  7. R&D Magazine: Windows into Solar Power Sources with Quantum Dots

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    R&D Magazine: Windows into Solar Power Sources with Quantum Dots R&D Magazine: Windows into Solar Power Sources with Quantum Dots A luminescent solar concentrator is an emerging sunlight harvesting technology that has the potential to disrupt the way we think about energy: It could turn any window into a daytime power source. August 30, 2015 R&D Magazine: Windows into Solar Power Sources with Quantum Dots A luminescent solar concentrator is an emerging sunlight harvesting technology

  8. Direct Observation of Energy-Gap Scaling Law in CdSe Quantum Dots with Positrons

    SciTech Connect (OSTI)

    Denison, Arthur Blanchard; Weber, M. H.; Lynn, K. G.; Barbiellini, B.; Sterne, P. A.

    2002-07-01

    CdSe quantum dot samples with sizes in the range of 1.8~6 nm in diameter were examined by positron annihilation spectroscopy. The results were compared to data obtained for single-crystal bulk CdSe. Evidence is provided that the positrons annihilate within the nanospheres. The annihilation line shape shows a smearing at the boundary of the Jones zone proportional to the widening of the band gap due to a reduction in the size of the quantum dots. The data confirm that the change in the band gap is inversely proportional to the square of the quantum dot diameter.

  9. The use of bulk states to accelerate the band edge statecalculation of a semiconductor quantum dot

    SciTech Connect (OSTI)

    Vomel, Christof; Tomov, Stanimire Z.; Wang, Lin-Wang; Marques,Osni A.; Dongarra, Jack J.

    2006-05-10

    We present a new technique to accelerate the convergence of the folded spectrum method in empirical pseudopotential band edge state calculations for colloidal quantum dots. We use bulk band states of the materials constituent of the quantum dot to construct initial vectors and a preconditioner. We apply these to accelerate the convergence of the folded spectrum method for the interior states at the top of the valence and the bottom of the conduction band. For large CdSe quantum dots, the number of iteration steps until convergence decreases by about a factor of 4 compared to previous calculations.

  10. Far off-resonant coupling between photonic crystal microcavity and single quantum dot with resonant excitation

    SciTech Connect (OSTI)

    Banihashemi, Mehdi; Ahmadi, Vahid, E-mail: v-ahmadi@modares.ac.ir [Department of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, P.O. Box 14115-194 (Iran, Islamic Republic of)] [Department of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, P.O. Box 14115-194 (Iran, Islamic Republic of); Nakamura, Tatsuya; Kojima, Takanori; Kojima, Kazunobu; Noda, Susumu [Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510 (Japan)] [Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510 (Japan)

    2013-12-16

    In this paper, we experimentally demonstrate that with sub-nanowatt coherent s-shell excitation of a single InAs quantum dot, off-resonant coupling of 4.1?nm is possible between L3 photonic crystal microcavity and the quantum dot at 50?K. This resonant excitation reduces strongly the effect of surrounding charges to quantum dot, multiexciton complexes and pure dephasing. It seems that this far off-resonant coupling is the result of increased number of acoustical phonons due to high operating temperature of 50?K. The 4.1?nm detuning is the largest amount for this kind of coupling.

  11. R&D Magazine: Windows into Solar Power Sources with Quantum Dots

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    R&D Magazine: Windows into Solar Power Sources with Quantum Dots August 30, 2015 R&D Magazine: Windows into Solar Power Sources with Quantum Dots A luminescent solar concentrator is an emerging sunlight harvesting technology that has the potential to disrupt the way we think about energy: It could turn any window into a daytime power source. "In these devices, a fraction of light transmitted through the window is absorbed by nano-sized particles (semiconductor quantum dots)

  12. Profiling the local carrier concentration across a semiconductor quantum dot

    SciTech Connect (OSTI)

    Walrath, J. C.; Lin, Yen-Hsiang; Huang, S.; Goldman, R. S.

    2015-05-11

    We profile the local carrier concentration, n, across epitaxial InAs/GaAs quantum dots (QDs) consisting of 3D islands on top of a 2D alloy layer. We use scanning thermoelectric microscopy to measure a profile of the temperature gradient-induced voltage, which is converted to a profile of the local Seebeck coefficient, S. The S profile is then converted to a conduction band-edge profile and compared with Poisson-Schrodinger band-edge simulations. Our combined computational-experimental approach suggests a reduced carrier concentration in the QD center in comparison to that of the 2D alloy layer. The relative roles of free carrier trapping and/or dopant expulsion are discussed.

  13. Interaction of graphene quantum dots with bulk semiconductor surfaces

    SciTech Connect (OSTI)

    Mohapatra, P. K.; Singh, B. P.; Kushavah, Dushyant; Mohapatra, J.

    2015-05-15

    Highly luminescent graphene quantum dots (GQDs) are synthesized through thermolysis of glucose. The average lateral size of the synthesized GQDs is found to be ?5 nm. The occurrence of D and G band at 1345 and 1580 cm{sup ?1} in Raman spectrum confirms the presence of graphene layers. GQDs are mostly consisting of 3 to 4 graphene layers as confirmed from the AFM measurements. Photoluminescence (PL) measurement shows a distinct broadening of the spectrum when GQDs are on the semiconducting bulk surface compared to GQDs in water. The time resolved PL measurement shows a significant shortening in PL lifetime due to the substrate interaction on GQDs compared to the GQDs in solution phase.

  14. Location deterministic biosensing from quantum-dot-nanowire assemblies

    SciTech Connect (OSTI)

    Liu, Chao; Kim, Kwanoh; Fan, D. L.

    2014-08-25

    Semiconductor quantum dots (QDs) with high fluorescent brightness, stability, and tunable sizes, have received considerable interest for imaging, sensing, and delivery of biomolecules. In this research, we demonstrate location deterministic biochemical detection from arrays of QD-nanowire hybrid assemblies. QDs with diameters less than 10 nm are manipulated and precisely positioned on the tips of the assembled Gold (Au) nanowires. The manipulation mechanisms are quantitatively understood as the synergetic effects of dielectrophoretic (DEP) and alternating current electroosmosis (ACEO) due to AC electric fields. The QD-nanowire hybrid sensors operate uniquely by concentrating bioanalytes to QDs on the tips of nanowires before detection, offering much enhanced efficiency and sensitivity, in addition to the position-predictable rationality. This research could result in advances in QD-based biomedical detection and inspires an innovative approach for fabricating various QD-based nanodevices.

  15. Pulsed laser deposition of Mn doped CdSe quantum dots for improved...

    Office of Scientific and Technical Information (OSTI)

    Pulsed laser deposition of Mn doped CdSe quantum dots for improved solar cell performance Citation Details In-Document Search Title: Pulsed laser deposition of Mn doped CdSe ...

  16. Quantum Dots Promise to Significantly Boost Solar Cell Efficiencies (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-08-01

    In the search for a third generation of solar-cell technologies, a leading candidate is the use of 'quantum dots' -- tiny spheres of semiconductor material measuring only about 2-10 billionths of a meter in diameter. Quantum dots have the potential to dramatically increase the efficiency of converting sunlight into energy -- perhaps even doubling it in some devices -- because of their ability to generate more than one bound electron-hole pair, or exciton, per incoming photon. NREL has produced quantum dots using colloidal suspensions; then, using molecular self-assembly, they have been fabricated into the first-ever quantum-dot solar cells. While these devices operate with only 4.4% efficiency, they demonstrate the capability for low-cost manufacturing.

  17. Observation of the Kondo effect in a spin-3/2 hole quantum dot...

    Office of Scientific and Technical Information (OSTI)

    Citation Details In-Document Search Title: Observation of the Kondo effect in a spin-32 hole quantum dot We report the ... OSTI Identifier: 22261852 Resource Type: Journal Article ...

  18. Quantum Dot Solar Cells: High Efficiency through Multiple Exciton Generation

    SciTech Connect (OSTI)

    Hanna, M. C.; Ellingson, R. J.; Beard, M.; Yu, P.; Micic, O. I.; Nozik, A. J.; c.

    2005-01-01

    Impact ionization is a process in which absorbed photons in semiconductors that are at least twice the bandgap can produce multiple electron-hole pairs. For single-bandgap photovoltaic devices, this effect produces greatly enhanced theoretical thermodynamic conversion efficiencies that range from 45-85%, depending upon solar concentration, the cell temperature, and the number of electron-hole pairs produced per photon. For quantum dots (QDs), electron-hole pairs exist as excitons. We have observed astoundingly efficient multiple exciton generation (MEG) in QDs of PbSe (bulk Eg = 0.28 eV), ranging in diameter from 3.9 to 5.7nm (Eg = 0.73, 0.82, and 0.91 eV, respectively). The effective masses of electron and holes are about equal in PbSe, and the onset for efficient MEG occurs at about three times the QD HOMO-LUMO transition (its ''bandgap''). The quantum yield rises quickly after the onset and reaches 300% at 4 x Eg (3.64 eV) for the smallest QD; this means that every QD in the sample produces three electron-hole pairs/photon.

  19. Evaluating charge noise acting on semiconductor quantum dots in the circuit quantum electrodynamics architecture

    SciTech Connect (OSTI)

    Basset, J.; Stockklauser, A.; Jarausch, D.-D.; Frey, T.; Reichl, C.; Wegscheider, W.; Wallraff, A.; Ensslin, K.; Ihn, T.

    2014-08-11

    We evaluate the charge noise acting on a GaAs/GaAlAs based semiconductor double quantum dot dipole-coupled to the voltage oscillations of a superconducting transmission line resonator. The in-phase (I) and the quadrature (Q) components of the microwave tone transmitted through the resonator are sensitive to charging events in the surrounding environment of the double dot with an optimum sensitivity of 8.510{sup ?5}?e/?(Hz). A low frequency 1/f type noise spectrum combined with a white noise level of 6.610{sup ?6} e{sup 2}/Hz above 1?Hz is extracted, consistent with previous results obtained with quantum point contact charge detectors on similar heterostructures. The slope of the 1/f noise allows to extract a lower bound for the double-dot charge qubit dephasing rate which we compare to the one extracted from a Jaynes-Cummings Hamiltonian approach. The two rates are found to be similar emphasizing that charge noise is the main source of dephasing in our system.

  20. The effect of Coulomb interactions on thermoelectric properties of quantum dots

    SciTech Connect (OSTI)

    Zimbovskaya, Natalya A.

    2014-03-14

    Thermoelectric effects in a quantum dot coupled to the source and drain charge reservoirs are explored using a nonequilibrium Green's functions formalism beyond the Hartree-Fock approximation. Thermal transport is analyzed within a linear response regime. A transition from Coulomb blockade regime to Kondo regime in thermoelectric transport through a single-level quantum dot is traced using unified approximations for the relevant Green's functions.

  1. Quantum DotBridgeFullerene Heterodimers with Controlled Photoinduced Electron Transfer

    SciTech Connect (OSTI)

    Cotlet, M.; Xu, Z.

    2011-06-27

    A series of donor-bridge-acceptor systems in the form of core/shell CdSe/ZnS quantum dot-bridge-fullerene heterodimers (see picture) with varying bridge length and varying quantum dot size were self-assembled by a surface-based stepwise method to demonstrate control of the rate and of the magnitude of fluctuations of photoinduced electron transfer at the single-molecule level.

  2. Final Progress Report for Project Entitled: Quantum Dot Tracers for Use in Engineered Geothermal Systems

    SciTech Connect (OSTI)

    Rose, Peter; Bartl, Michael; Reimus, Paul; Williams, Mark; Mella, Mike

    2015-09-12

    The objective of this project was to develop and demonstrate a new class of tracers that offer great promise for use in characterizing fracture networks in EGS reservoirs. From laboratory synthesis and testing through numerical modeling and field demonstrations, we have demonstrated the amazing versatility and applicability of quantum dot tracers. This report summarizes the results of four years of research into the design, synthesis, and characterization of semiconductor nanocrystals (quantum dots) for use as geothermal tracers.

  3. Multi-stacked InAs/GaAs quantum dots grown with different growth modes for quantum dot solar cells

    SciTech Connect (OSTI)

    Kim, Yeongho; Ban, Keun-Yong Honsberg, Christiana B.

    2015-06-01

    We have studied the material properties and device performance of InAs/GaAs quantum dot solar cells (QDSCs) made using three different QD growth modes: Stranski-Krastanov (S-K), quasi-monolayer (QML), and sub-monolayer (SML) growth modes. All QDSCs show an extended external quantum efficiency (EQE) at near infrared wavelengths of 9501070?nm from the QD absorption. Compared to the S-K and SML QDSCs, the QML QDSC with a higher strain exhibits a poor EQE response in the wavelength region of 300880?nm due to increased non-radiative recombination. The conversion efficiency of the S-K and SML QDSCs exceeds that of the reference cell (13.4%) without QDs due to an enhanced photocurrent (>16% increase) produced by the silicon doped QD stacks. However, as expected from the EQE of the QML QDSC, the increase of strain-induced crystalline defects greatly degrades the photocurrent and open-circuit voltage, leading to the lowest conversion efficiency (8.9%)

  4. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

    SciTech Connect (OSTI)

    Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep

    2013-01-28

    We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

  5. NREL Researchers Demonstrate External Quantum Efficiency Surpassing 100% in a Quantum Dot Solar Cell (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-12-01

    A new device that produces and collects multiple electrons per photon could yield inexpensive, high-efficiency photovoltaics. A new device developed through research at the National Renewable Energy Laboratory (NREL) reduces conventional losses in photovoltaic (PV) solar cells, potentially increasing the power conversion efficiency-but not the cost-of the solar cells. Solar cells convert optical energy from the sun into usable electricity; however, almost 50% of the incident energy is lost as heat with present-day technologies. High-efficiency, multi-junction cells reduce this heat loss, but their cost is significantly higher. NREL's new device uses excess energy in solar photons to create extra charges rather than heat. This was achieved using 5-nanometer-diameter quantum dots of lead selenide (PbSe) tightly packed into a film. The researchers chemically treated the film, and then fabricated a device that yielded an external quantum efficiency (number of electrons produced per incident photon) exceeding 100%, a value beyond that of all current solar cells for any incident photon. Quantum dots are known to efficiently generate multiple excitons (a bound electron-hole pair) per absorbed high-energy photon, and this device definitively demonstrates the collection of multiple electrons per photon in a PV cell. The internal quantum efficiency corrects for photons that are not absorbed in the photoactive layer and shows that the PbSe film generates 30% to 40% more electrons in the high-energy spectral region than is possible with a conventional solar cell. While the unoptimized overall power conversion efficiency is still low (less than 5%), the results have important implications for PV because such high quantum efficiency can lead to more electrical current produced than possible using present technologies. Furthermore, this fabrication is also amenable to inexpensive, high-throughput roll-to-roll manufacturing.

  6. Cavity-enhanced single photon emission from site-controlled In(Ga)As quantum dots fabricated using nanoimprint lithography

    SciTech Connect (OSTI)

    Tommila, J.; Hakkarainen, T. V.; Schramm, A. Guina, M.; Belykh, V. V.; Sibeldin, N. N.; Heinonen, E.

    2014-05-26

    We report on the emission dynamics of single In(Ga)As quantum dots formed in etched GaAs pits and integrated into micropillar cavities. The site-controlled quantum dots were fabricated by molecular beam epitaxy on nanoimprint lithography patterned GaAs(001) surfaces. Triggered single photon emission confirmed by photon autocorrelation measurements is demonstrated. Time-resolved photoluminescence experiments clearly show an effect of the cavity on the spontaneous emission rate of the quantum dot.

  7. Ground state energy of an exciton in a spherical quantum dot in the presence of an external magnetic field

    SciTech Connect (OSTI)

    Jahan K, Luhluh Boda, Aalu; Chatterjee, Ashok

    2015-05-15

    The problem of an exciton trapped in a three dimensional Gaussian quantum dot is studied in the presence of an external magnetic field. A variational method is employed to obtain the ground state energy of the exciton as a function of the quantum dot size, the confinement strength and the magnetic field. It is also shown that the variation of the size of the exciton with the radius of the quantum dot.

  8. Quantum-Dots Based Electrochemical Immunoassay of Interleukin-1?

    SciTech Connect (OSTI)

    Wu, Hong; Liu, Guodong; Wang, Jun; Lin, Yuehe

    2007-07-01

    We describe a quantum-dot (QD, CdSe@ZnS)-based electrochemical immunoassay to detect a protein biomarker, interleukin-1? (IL-1?). QD conjugated with anti-IL-1? antibody was used as a label in an immunorecognition event. After a complete sandwich immunoreaction among the primary IL-1? antibody (immobilized on the avidin-modified magnetic beads), IL-1?, and the QD-labeled secondary antibody, QD labels were attached to the magnetic-bead surface through the antibody-antigen immunocomplex. Electrochemical stripping analysis of the captured QDs was used to quantify the concentration of IL-1? after an acid-dissolution step. The streptavidin-modified magnetic beads and the magnetic separation platform were used to integrate a facile antibody immobilization (through a biotin/streptavidin interaction) with immunoreactions and the isolation of immunocomplexes from reaction solutions in the assay. The voltammetric response is highly linear over the range of 0.5 to 50 ng mL-1 IL 1?, and the limit of detection is estimated to be 0.3 ng mL-1 (18 pM). This QD-based electrochemical immunoassay shows great promise for rapid, simple, and cost-effective analysis of protein biomarkers.

  9. GaAs quantum dot solar cell under concentrated radiation

    SciTech Connect (OSTI)

    Sablon, K.; Little, J. W.; Hier, H.; Li, Y.; Mitin, V.; Vagidov, N.; Sergeev, A.

    2015-08-17

    Effects of concentrated solar radiation on photovoltaic performance are investigated in well-developed GaAs quantum dot (QD) solar cells with 1-Sun efficiencies of 18%–19%. In these devices, the conversion processes are enhanced by nanoscale potential barriers and/or AlGaAs atomically thin barriers around QDs, which prevent photoelectron capture to QDs. Under concentrated radiation, the short circuit current increases proportionally to the concentration and the open circuit voltage shows the logarithmic increase. In the range up to hundred Suns, the contributions of QDs to the photocurrent are proportional to the light concentration. The ideality factors of 1.1–1.3 found from the V{sub OC}-Sun characteristics demonstrate effective suppression of recombination processes in barrier-separated QDs. The conversion efficiency shows the wide maximum in the range of 40–90 Suns and reaches 21.6%. Detailed analysis of I-V-Sun characteristics shows that at low intensities, the series resistance decreases inversely proportional to the concentration and, at ∼40 Suns, reaches the plateau determined mainly by the front contact resistance. Improvement of contact resistance would increase efficiency to above 24% at thousand Suns.

  10. Electrically driven single photon emission from a CdSe/ZnSSe single quantum dot at 200?K

    SciTech Connect (OSTI)

    Quitsch, Wolf; Kmmell, Tilmar; Bacher, Gerd; Gust, Arne; Kruse, Carsten; Hommel, Detlef

    2014-09-01

    High temperature operation of an electrically driven single photon emitter based on a single epitaxial quantum dot is reported. CdSe/ZnSSe/MgS quantum dots are embedded into a p-i-n diode architecture providing almost background free excitonic and biexcitonic electroluminescence from individual quantum dots through apertures in the top contacts. Clear antibunching with g{sup 2}(??=?0)?=?0.28??0.20 can be tracked up to T?=?200?K, representing the highest temperature for electrically triggered single photon emission from a single quantum dot device.

  11. Observation of the Kondo effect in a spin-3/2 hole quantum dot

    SciTech Connect (OSTI)

    Klochan, O.; Micolich, A. P.; Hamilton, A. R.; Trunov, K.; Reuter, D.; Wieck, A. D.

    2013-12-04

    We report the observation of the Kondo effect in a spin-3/2 hole quantum dot formed near pinch-off in a GaAs quantum wire. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the zero-bias peak in the differential conductance splits an in-plane magnetic field and the splitting is independent of gate voltage. Second, the splitting rate is twice as large as that for the lowest one-dimensional subband. We show that the Zeeman splitting of the zero-bias peak is highly anisotropic and attribute this to the strong spin-orbit interaction for holes in GaAs.

  12. g-factor anisotropy in nanowire-based InAs quantum dots

    SciTech Connect (OSTI)

    D'Hollosy, Samuel; Fábián, Gábor; Baumgartner, Andreas; Schönenberger, Christian; Nygård, Jesper

    2013-12-04

    The determination and control of the electron g-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the g-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the g-factor from the splitting of Kondo resonances and find that it varies continuously in the range between |g*| = 5 and 15.

  13. Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chow, Weng W.; Liu, Alan Y.; Gossard, Arthur C.; Bowers, John E.

    2016-01-01

    We present a method to quantify inhomogeneous broadening and nonradiative losses in quantum dot lasers by comparing the gain and spontaneous emission results of a microscopic laser theory with measurements made on 1.3 μm InAs quantum-dot lasers. Calculated spontaneous-emission spectra are first matched to those measured experimentally to determine the inhomogeneous broadening in the experimental samples. This is possible because treatment of carrier scattering at the level of quantum kinetic equations provides the homogeneously broadened spectra without use of free parameters, such as the dephasing rate. Thus we then extract the nonradiative recombination current associated with the quantum-dot active regionmore » from a comparison of measured and calculated gain versus current relations.« less

  14. Prediction of a strain-induced conduction-band minimum in embedded quantum dots

    SciTech Connect (OSTI)

    Williamson, A.J.; Zunger, A.; Canning, A.

    1998-02-01

    Free-standing InP quantum dots have previously been theoretically and experimentally shown to have a direct band gap across a large range of experimentally accessible sizes. We demonstrated that when these dots are embedded coherently within a GaP barrier material, the effects of quantum confinement in conjunction with coherent strain suggest there will be a critical diameter of dot ({approx}60 {Angstrom}), above which the dot is direct, type I, and below which it is indirect, type II. However, the strain in the system acts to produce another conduction state with an even lower energy, in which electrons are localized in small pockets at the interface between the InP dot and the GaP barrier. Since this conduction state is GaP X{sub 1c} derived and the highest occupied valence state is InP, {Gamma} derived, the fundamental transition is predicted to be indirect in both real and reciprocal space ({open_quotes}type II{close_quotes}) for all dot sizes. This effect is peculiar to the strained dot, and is absent in the freestanding dot. {copyright} {ital 1998} {ital The American Physical Society}

  15. Semiconductor Quantum Dots and Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells

    SciTech Connect (OSTI)

    Nozik, Arthur J.; Beard, Matthew C.; Luther, Joseph M.; Law, Matt; Ellingson, Randy J.; Johnson, Justin C.

    2010-10-14

    Here, we will first briefly summarize the general principles of QD synthesis using our previous work on InP as an example. Then we will focus on QDs of the IV-VI Pb chalcogenides (PbSe, PbS, and PbTe) and Si QDs because these were among the first QDs that were reported to produce multiple excitons upon absorbing single photons of appropriate energy (a process we call multiple exciton generation (MEG)). We note that in addition to Si and the Pb-VI QDs, two other semiconductor systems (III-V InP QDs(56) and II-VI core-shell CdTe/CdSe QDs(57)) were very recently reported to also produce MEG. Then we will discuss photogenerated carrier dynamics in QDs, including the issues and controversies related to the cooling of hot carriers and the magnitude and significance of MEG in QDs. Finally, we will discuss applications of QDs and QD arrays in novel quantum dot PV cells, where multiple exciton generation from single photons could yield significantly higher PV conversion efficiencies.

  16. Quantum Dot Materials Can Reduce Heat, Boost Electrical Output...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Golden, Colo. - Researchers at the U.S. Department of Energy's National Renewable Energy ... dots," produce as many as three electrons from one high energy photon of sunlight. ...

  17. Photoluminescence properties of cadmium-selenide quantum dots embedded in a liquid-crystal polymer matrix

    SciTech Connect (OSTI)

    Tselikov, G. I. Timoshenko, V. Yu.; Plenge, J.; Ruehl, E.; Shatalova, A. M.; Shandryuk, G. A.; Merekalov, A. S.; Tal'roze, R. V.

    2013-05-15

    The photoluminescence properties of cadmium-selenide (CdSe) quantum dots with an average size of {approx}3 nm, embedded in a liquid-crystal polymer matrix are studied. It was found that an increase in the quantum-dot concentration results in modification of the intrinsic (exciton) photoluminescence spectrum in the range 500-600 nm and a nonmonotonic change in its intensity. Time-resolved measurements show the biexponential decay of the photoluminescence intensity with various ratios of fast and slow components depending on the quantum-dot concentration. In this case, the characteristic lifetimes of exciton photoluminescence are 5-10 and 35-50 ns for the fast and slow components, respectively, which is much shorter than the times for colloidal CdSe quantum dots of the same size. The observed features of the photoluminescence spectra and kinetics are explained by the effects of light reabsorption, energy transfer from quantum dots to the liquid-crystal polymer matrix, and the effect of the electronic states at the CdSe/(liquid crystal) interface.

  18. Inhibition of plasmonically enhanced interdot energy transfer in quantum dot solids via photo-oxidation

    SciTech Connect (OSTI)

    Sadeghi, S. M.; Nejat, A.; West, R. G.

    2012-11-15

    We studied the impact of photophysical and photochemical processes on the interdot Forster energy transfer in monodisperse CdSe/ZnS quantum dot solids. For this, we investigated emission spectra of CdSe/ZnS quantum dot solids in the vicinity of gold metallic nanoparticles coated with chromium oxide. The metallic nanoparticles were used to enhance the rate of the energy transfer between the quantum dots, while the chromium oxide coating led to significant increase of their photo-oxidation rates. Our results showed that irradiation of such solids with a laser beam can lead to unique spectral changes, including narrowing and blue shift. We investigate these effects in terms of inhibition of the plasmonically enhanced interdot energy transfer between quantum dots via the chromium-oxide accelerated photo-oxidation process. We demonstrate this considering energy-dependent rate of the interdot energy transfer process, plasmonic effects, and the way photo-oxidation enhances non-radiative decay rates of quantum dots with different sizes.

  19. Energy levels of double triangular graphene quantum dots

    SciTech Connect (OSTI)

    Liang, F. X.; Jiang, Z. T. Zhang, H. Y.; Li, S.; Lv, Z. T.

    2014-09-28

    We investigate theoretically the energy levels of the coupled double triangular graphene quantum dots (GQDs) based on the tight-binding Hamiltonian model. The double GQDs including the ZZ-type, ZA-type, and AA-type GQDs with the two GQDs having the zigzag or armchair boundaries can be coupled together via different interdot connections, such as the direct coupling, the chains of benzene rings, and those of carbon atoms. It is shown that the energy spectrum of the coupled double GQDs is the amalgamation of those spectra of the corresponding two isolated GQDs with the modification triggered by the interdot connections. The interdot connection is inclined to lift up the degeneracies of the energy levels in different degree, and as the connection changes from the direct coupling to the long chains, the removal of energy degeneracies is suppressed in ZZ-type and AA-type double GQDs, which indicates that the two coupled GQDs are inclined to become decoupled. Then we consider the influences on the spectra of the coupled double GQDs induced by the electric fields applied on the GQDs or the connection, which manifests as the global spectrum redistribution or the local energy level shift. Finally, we study the symmetrical and asymmetrical energy spectra of the double GQDs caused by the substrates supporting the two GQDs, clearly demonstrating how the substrates affect the double GQDs' spectrum. This research elucidates the energy spectra of the coupled double GQDs, as well as the mechanics of manipulating them by the electric field and the substrates, which would be a significant reference for designing GQD-based devices.

  20. Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix

    SciTech Connect (OSTI)

    Gruzintsev, A. N. Emelchenko, G. A.; Masalov, V. M.; Yakimov, E. E.; Barthou, C.; Maitre, A.

    2009-02-15

    The effect of the photonic band gap in the photonic crystal, the synthesized SiO{sub 2} opal with embedded CdSe/ZnS quantum dots, on its luminescence in the visible spectral region is studied. It is shown that the position of the photonic band gap in the luminescence and reflectance spectra for the infiltrated opal depends on the diameter of the constituent nanospheres and on the angle of recording the signal. The optimal conditions for embedding the CdSe/ZnS quantum dots from the solution into the opal matrix are determined. It is found that, for the opal-CdSe/ZnS nanocomposites, the emission intensity decreases and the luminescence decay time increases in the spatial directions, in which the spectral positions of the photonic band gap and the luminescence peak of the quantum dots coincide.

  1. Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

    SciTech Connect (OSTI)

    Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

    2015-09-08

    In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. We report ultra-fast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects of electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.

  2. Determination of carrier lifetime and mobility in colloidal quantum dot films via impedance spectroscopy

    SciTech Connect (OSTI)

    Rath, Arup K.; Lasanta, Tania; Bernechea, Maria; Diedenhofen, Silke L.; Konstantatos, Gerasimos

    2014-02-10

    Impedance Spectroscopy (IS) proves to be a powerful tool for the determination of carrier lifetime and majority carrier mobility in colloidal quantum dot films. We employ IS to determine the carrier lifetime in PbS quantum dot Schottky solar cells with Al and we verify the validity of the technique via transient photovoltage. We also present a simple approach based on an RC model that allows the determination of carrier mobility in PbS quantum dot films and we corroborate the results via comparison with space charge limited measurements. In summary, we demonstrate the potential of IS to characterize key-to-photovoltaics optoelectronic properties, carrier lifetime, and mobility, in a facile way.

  3. Design of quantum dot lattices in amorphous matrices by ion beam irradiation

    SciTech Connect (OSTI)

    Buljan, M.; Bogdanovic-Radovic, I.; Karlusic, M.; Desnica, U. V.; Radic, N.; Jaksic, M.; Salamon, K.; Drazic, G.; Bernstorff, S.; Holy, V.

    2011-10-15

    We report on the highly controllable self-assembly of semiconductor quantum dots and metallic nanoparticles in a solid amorphous matrix, induced by ion beam irradiation of an amorphous multilayer. We demonstrate experimentally and theoretically a possibility to tune the basic structural properties of the quantum dots in a wide range. Furthermore, the sizes, distances, and arrangement type of the quantum dots follow simple equations dependent on the irradiation and the multilayer properties. We present a Monte Carlo model for the simulation and prediction of the structural properties of the materials formed by this method. The presented results enable engineering and simple production of functional materials or simple devices interesting for applications in nanotechnology.

  4. Enhanced spontaneous emission of CdSe quantum dots in monolithic II-VI pillar microcavities

    SciTech Connect (OSTI)

    Lohmeyer, H.; Kruse, C.; Sebald, K.; Gutowski, J.; Hommel, D.

    2006-08-28

    The emission properties of CdSe/ZnSe quantum dots in ZnSe-based pillar microcavities are studied. All-epitaxial cavities made of ZnSSe and MgS/ZnCdSe superlattices with a single quantum-dot sheet embedded have been grown by molecular beam epitaxy. Pillar structures with diameters down to 500 nm have been realized by focused-ion-beam etching. A pronounced enhancement of the spontaneous emission rate of quantum dots coupling to the fundamental mode of the cavities is found as evidence for the Purcell effect. The enhancement by a factor of up to 3.8 depends systematically on the pillar diameter and thus on the Purcell factor of the individual pillars.

  5. Microscopic model for intersubband gain from electrically pumped quantum-dot structures

    SciTech Connect (OSTI)

    Michael, Stephan; Chow, Weng Wah; Schneider, Han Christian

    2014-10-03

    We study theoretically the performance of electrically pumped self-organized quantum dots as a gain material in the mid-infrared range at room temperature. We analyze an AlGaAs/InGaAs based structure composed of dots-in-a-well sandwiched between two quantum wells. We numerically analyze a comprehensive model by combining a many-particle approach for electronic dynamics with a realistic modeling of the electronic states in the whole structure. We investigate the gain both for quasi-equilibrium conditions and current injection. We find, comparing different structures, that steady-state gain can only be realized by an efficient extraction process, which prevents an accumulation of electrons in continuum states, that make the available scattering pathways through the quantum-dot active region too fast to sustain inversion.

  6. Determination of shape anisotropy in embedded low contrast submonolayer quantum dot structures

    SciTech Connect (OSTI)

    Dhomkar, S.; Ji, H.; Kuskovsky, I. L.; Vaxelaire, N.; Noyan, I. C.; Shuvayev, V.; Tamargo, M. C.

    2015-12-21

    We describe a procedure for the morphological characterization of hard-to-image submonolayer quantum dot structures. This procedure employs high resolution x-ray diffraction based reciprocal space mapping, accompanied by rigorous diffraction modeling for precise determination of the morphology of submonolayer quantum dots. Our modelling results and experimental data clearly show that the investigated quantum dots are anisotropically elongated along the [110] orientation. Complementary polarization dependent photoluminescence measurements, combined with our previously reported magneto-photoluminescence data, confirm this conclusion. Our formalism enables direct extraction of structural information of complex embedded three-dimensional structures, which, due to their low electron density contrast with respect to the surrounding host matrix, cannot be readily investigated by traditional electron diffraction techniques.

  7. Microscopic model for intersubband gain from electrically pumped quantum-dot structures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Michael, Stephan; Chow, Weng Wah; Schneider, Han Christian

    2014-10-03

    We study theoretically the performance of electrically pumped self-organized quantum dots as a gain material in the mid-infrared range at room temperature. We analyze an AlGaAs/InGaAs based structure composed of dots-in-a-well sandwiched between two quantum wells. We numerically analyze a comprehensive model by combining a many-particle approach for electronic dynamics with a realistic modeling of the electronic states in the whole structure. We investigate the gain both for quasi-equilibrium conditions and current injection. We find, comparing different structures, that steady-state gain can only be realized by an efficient extraction process, which prevents an accumulation of electrons in continuum states, thatmore » make the available scattering pathways through the quantum-dot active region too fast to sustain inversion.« less

  8. Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells

    SciTech Connect (OSTI)

    Lu, Y. F.; Cao, X. A.

    2014-11-17

    CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467 nm with a spectral full-width-at-half-maximum of ∼30 nm. With a 3 ML ZnS cladding layer, which also acts as a passivating and strain-compensating layer, the QDQWs acquired a ∼35% quantum yield of the QW emission. Blue and green electroluminescence (EL) was obtained from QDQW light-emitting devices with 3–4.5 ML CdSe QWs. It was found that as the peak blueshifted, the overall EL was increasingly dominated by defect state emission due to poor hole injection into the QDQWs. The weak EL was also attributed to strong field-induced charge separation resulting from the unique QDQW geometry, weakening the oscillator strength of optical transitions.

  9. The impact of disorder on charge transport in three dimensional quantum dot resonant tunneling structures

    SciTech Connect (OSTI)

    Puthen-Veettil, B. Patterson, R.; Knig, D.; Conibeer, G.; Green, M. A.

    2014-10-28

    Efficient iso-entropic energy filtering of electronic waves can be realized through nanostructures with three dimensional confinement, such as quantum dot resonant tunneling structures. Large-area deployment of such structures is useful for energy selective contacts but such configuration is susceptible to structural disorders. In this work, the transport properties of quantum-dot-based wide-area resonant tunneling structures, subject to realistic disorder mechanisms, are studied. Positional variations of the quantum dots are shown to reduce the resonant transmission peaks while size variations in the device are shown to reduce as well as broaden the peaks. Increased quantum dot size distribution also results in a peak shift to lower energy which is attributed to large dots dominating transmission. A decrease in barrier thickness reduces the relative peak height while the overall transmission increases dramatically due to lower series resistance. While any shift away from ideality can be intuitively expected to reduce the resonance peak, quantification allows better understanding of the tolerances required for fabricating structures based on resonant tunneling phenomena/.

  10. Single InAs quantum dot coupled to different 'environments' in one wafer for quantum photonics

    SciTech Connect (OSTI)

    Yu, Ying; Shang, Xiang-Jun; Li, Mi-Feng; Zha, Guo-Wei; Xu, Jian-Xing; Wang, Li-Juan; Wang, Guo-Wei; Ni, Hai-Qiao; Dou, Xiuming; Sun, Baoquan; Niu, Zhi-Chuan

    2013-05-20

    Self assembled small InAs quantum dots (SQDs) were formed in various densities and environments using gradient InAs deposition on a non-rotating GaAs substrate. Two SQD environments (SQD I and SQD II) were characterized. SQD I featured SQDs surrounded by large QDs, and SQD II featured individual SQDs in the wetting layer (WL). Micro-photoluminescence of single QDs embedded in a cavity under various excitation powers and electric fields gave insight into carrier transport processes. Potential fluctuations of the WL in SQD II, induced by charge redistribution, show promise for charge-tunable QD devices; SQD I shows higher luminescence intensity as a single-photon source.

  11. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  12. All-optical depletion of dark excitons from a semiconductor quantum dot

    SciTech Connect (OSTI)

    Schmidgall, E. R.; Schwartz, I.; Cogan, D.; Gershoni, D.; Gantz, L.; Heindel, T.; Reitzenstein, S.

    2015-05-11

    Semiconductor quantum dots are considered to be the leading venue for fabricating on-demand sources of single photons. However, the generation of long-lived dark excitons imposes significant limits on the efficiency of these sources. We demonstrate a technique that optically pumps the dark exciton population and converts it to a bright exciton population, using intermediate excited biexciton states. We show experimentally that our method considerably reduces the dark exciton population while doubling the triggered bright exciton emission, approaching thereby near-unit fidelity of quantum dot depletion.

  13. Simulation of a broadband nano-biosensor based on an onion-like quantum dot-quantum well structure

    SciTech Connect (OSTI)

    Absalan, H; SalmanOgli, A; Rostami, R

    2013-07-31

    The fluorescence resonance energy transfer is studied between modified quantum-dots and quantum-wells used as a donor and an acceptor. Because of the unique properties of quantum dots, including diverse surface modification flexibility, bio-compatibility, high quantum yields and wide absorption, their use as nano-biosensors and bio-markers used in diagnosis of cancer is suggested. The fluorescence resonance energy transfer is simulated in a quantum dot-quantum well system, where the energy can flow from donor to acceptor. If the energy transfer can be either turned on or off by a specific interaction, such as interaction with any dyes, a molecular binding event or a cleavage reaction, a sensor can be designed (under assumption that the healthy cells have a known effect or unyielding effect on output parameters while cancerous cells, due to their pandemic optical properties, can impact the fluorescence resonance energy transfer parameters). The developed nano-biosensor can operate in a wide range of wavelengths (310 - 760 nm). (laser applications in biology and medicine)

  14. InP quantum dots: Electronic structure, surface effects, and the redshifted emission

    SciTech Connect (OSTI)

    Fu, H.; Zunger, A.

    1997-07-01

    We present pseudopotential plane-wave electronic-structure calculations on InP quantum dots in an effort to understand quantum confinement and surface effects and to identify the origin of the long-lived and redshifted luminescence. We find that (i) unlike the case in small GaAs dots, the lowest unoccupied state of InP dots is the {Gamma}{sub 1c}-derived direct state rather than the X{sub 1c}-derived indirect state and (ii) unlike the prediction of {bold k}{center_dot}{bold p} models, the highest occupied state in InP dots has a 1sd-type envelope function rather than a (dipole-forbidden) 1pf envelope function. Thus explanations (i) and (ii) to the long-lived redshifted emission in terms of an orbitally forbidden character can be excluded. Furthermore, (iii) fully passivated InP dots have no surface states in the gap. However, (iv) removal of the anion-site passivation leads to a P dangling bond (DB) state just above the valence band, which will act as a trap for photogenerated holes. Similarly, (v) removal of the cation-site passivation leads to an In dangling-bond state below the conduction band. While the energy of the In DB state depends only weakly on quantum size, its radiative lifetime increases with quantum size. The calculated {approximately}300-meV redshift and the {approximately}18 times longer radiative lifetime relative to the dot-interior transition for the 26-{Angstrom} dot with an In DB are in good agreement with the observations of full-luminescence experiments for unetched InP dots. Yet, (vi) this type of redshift due to surface defect is inconsistent with that measured in {ital selective} excitation for HF-etched InP dots. (vii) The latter type of ({open_quotes}resonant{close_quotes}) redshift is compatible with the calculated {ital screened} singlet-triplet splitting in InP dots, suggesting that the slow emitting state seen in selective excitation could be a triplet state. {copyright} {ital 1997} {ital The American Physical Society}

  15. Interference with a quantum dot single-photon source and a laser at telecom wavelength

    SciTech Connect (OSTI)

    Felle, M.; Huwer, J. Stevenson, R. M.; Skiba-Szymanska, J.; Ward, M. B.; Shields, A. J.; Farrer, I.; Ritchie, D. A.; Penty, R. V.

    2015-09-28

    The interference of photons emitted by dissimilar sources is an essential requirement for a wide range of photonic quantum information applications. Many of these applications are in quantum communications and need to operate at standard telecommunication wavelengths to minimize the impact of photon losses and be compatible with existing infrastructure. Here, we demonstrate for the first time the quantum interference of telecom-wavelength photons from an InAs/GaAs quantum dot single-photon source and a laser; an important step towards such applications. The results are in good agreement with a theoretical model, indicating a high degree of indistinguishability for the interfering photons.

  16. Full counting statistics as a probe of quantum coherence in a side-coupled double quantum dot system

    SciTech Connect (OSTI)

    Xue, Hai-Bin

    2013-12-15

    We study theoretically the full counting statistics of electron transport through side-coupled double quantum dot (QD) based on an efficient particle-number-resolved master equation. It is demonstrated that the high-order cumulants of transport current are more sensitive to the quantum coherence than the average current, which can be used to probe the quantum coherence of the considered double QD system. Especially, quantum coherence plays a crucial role in determining whether the super-Poissonian noise occurs in the weak inter-dot hopping coupling regime depending on the corresponding QD-lead coupling, and the corresponding values of super-Poissonian noise can be relatively enhanced when considering the spins of conduction electrons. Moreover, this super-Poissonian noise bias range depends on the singly-occupied eigenstates of the system, which thus suggests a tunable super-Poissonian noise device. The occurrence-mechanism of super-Poissonian noise can be understood in terms of the interplay of quantum coherence and effective competition between fast-and-slow transport channels. -- Highlights: The FCS can be used to probe the quantum coherence of side-coupled double QD system. Probing quantum coherence using FCS may permit experimental tests in the near future. The current noise characteristics depend on the quantum coherence of this QD system. The super-Poissonian noise can be enhanced when considering conduction electron spin. The side-coupled double QD system suggests a tunable super-Poissonian noise device.

  17. Effect of matrix on InAs self-organized quantum dots on InP substrate

    SciTech Connect (OSTI)

    Ustinov, V.M.; Weber, E.R.; Ruvimov, S.; Liliental-Weber, Z.; Zhukov, A.E.; Egorov, A.Y.; Kovsh, A.R.; Tsatsulnikov, A.F.; Kopev, P.S.

    1998-01-01

    InAs self-organized quantum dots in In{sub 0.53}Ga{sub 0.47}As and In{sub 0.52}Al{sub 0.48}As matrices have been grown on InP substrates by molecular beam epitaxy. The dot size in InGaAs has been found to be 3{endash}4 times larger, but the areal density about an order of magnitude smaller than that in InAlAs. Low-temperature photoluminescence (PL) of the InAs/InGaAs quantum dots is characterized by a narrow (35 meV) PL line as compared to that of InAs/InAlAs quantum dots (170 meV). Quantum dot formation increases the carrier localization energy as compared to quantum well structures with the same InAs thickness in a similar manner for both InAs/InGaAs and InAs/InAlAs structures. The effect of the barrier band gap on the optical transition energy is qualitatively the same for quantum well and quantum dot structures. The results demonstrate a possibility of controlling the quantum dot emission wavelength by varying the matrix composition. {copyright} {ital 1998 American Institute of Physics.}

  18. CdSe Quantum-Dot-Sensitized Solar Cell with ~100% Internal Quantum Efficiency

    SciTech Connect (OSTI)

    Fuke, Nobuhiro; Hoch, Laura B.; Koposov, Alexey Y.; Manner, Virginia W.; Werder, Donald J.; Fukui, Atsushi; Koide, Naoki; Katayama, Hiroyuki; Sykora, Milan

    2010-10-20

    We have constructed and studied photoelectrochemical solar cells (PECs) consisting of a photoanode prepared by direct deposition of independently synthesized CdSe nanocrystal quantum dots (NQDs) onto a nanocrystalline TiO2 film (NQD/TiO2), aqueous Na2S or Li2S electrolyte, and a Pt counter electrode. We show that light harvesting efficiency (LHE) of the NQD/TiO2 photoanode is significantly enhanced when the NQD surface passivation is changed from tri-n-octylphosphine oxide (TOPO) to 4-butylamine (BA). In the PEC the use of NQDs with a shorter passivating ligand, BA, leads to a significant enhancement in both the electron injection efficiency at the NQD/TiO2 interface and charge collection efficiency at the NQD/electrolyte interface, with the latter attributed mostly to a more efficient diffusion of the electrolyte through the pores of the photoanode. We show that by utilizing BA-capped NQDs and aqueous Li2S as an electrolyte, it is possible to achieve ~100% internal quantum efficiency of photon-to-electron conversion, matching the performance of dye-sensitized solar cells.

  19. Background limited mid-infrared photodetection with photovoltaic HgTe colloidal quantum dots

    SciTech Connect (OSTI)

    Guyot-Sionnest, Philippe Roberts, John Andris

    2015-12-21

    The photovoltaic response of thin films of HgTe colloidal quantum dots in the 3–5 μm range is observed. With no applied bias, internal quantum efficiency exceeding 40%, specific detectivity above 10{sup 10} Jones and microseconds response times are obtained at 140 K. The cooled devices detect the ambient thermal radiation. A detector with 5.25 μm cut-off achieves Background Limited Infrared Photodetection at 90 K.

  20. Exciton dissociation and interdot transport in CdSe quantum-dot molecules

    SciTech Connect (OSTI)

    Franceschetti, Alberto; Zunger, Alex

    2001-04-15

    One of the most important parameters that determine the transport properties of a quantum dot array is the exciton dissociation energy, i.e., the energy {Delta}E required to dissociate an exciton into an electron and a hole localized in different dots. We show that a pseudopotential calculation for a dot molecule, coupled with a basic configuration interaction calculation of the exciton energy levels, provides directly the exciton dissociation energy, including the effects of wave function overlap, screened Coulomb attraction between the electron and the hole in different dots, and polarization effects. We find that {Delta}E decreases as the interdot distance decreases and as the dielectric constant of the medium increases.

  1. Deep-level transient spectroscopy of InAs/GaAs quantum dot superlattices

    SciTech Connect (OSTI)

    Sobolev, M. M.; Nevedomskii, V. N.; Zolotareva, R. V.; Vasil'ev, A. P.; Ustinov, V. M.

    2014-02-21

    Deep level transient spectroscopy (DLTS) has been applied to study the carrier emission from states of a 10-layer system of tunnel-coupled vertically correlated quantum dots (VCQDs) in p-n InAs/GaAs heterostructures with different widths of GaAs spacers under varied reverse bias (U{sub r}) and filling voltage pulse U{sub f}.

  2. Ligand-Mediated Modification of the Electronic Structure of CdSe Quantum Dots

    SciTech Connect (OSTI)

    Lee, Jonathan R.; Whitley, Heather D.; Meulenberg, Robert W.; Wolcott, Abraham; Zhang, Jin Z.; Prendergast, Peter; Lovingood, Derek D.; Strouse, Geoffrey F.; Ogitsu, Tadashi; Schwegler, Eric; Terminello, Louis J.; Van Buuren, Tony W.

    2012-05-18

    X-ray absorption spectroscopy and ab initio modeling of the experimental spectra have been used to investigate the effects of surface passivation on the unoccupied electronic states of CdSe quantum dots (QDs). Significant differences are observed in the unoccupied electronic structure of the CdSe QDs, which are shown to arise from variations in specific ligand-surface bonding interactions.

  3. Red, green, and blue lasing enabled by single-exciton gain in colloidal quantum dot films

    DOE Patents [OSTI]

    Nurmikko, Arto V.; Dang, Cuong

    2016-06-21

    The methods and materials described herein contemplate the use films of colloidal quantum dots as a gain medium in a vertical-cavity surface-emitting laser. The present disclosure demonstrates a laser with single-exciton gain in the red, green, and blue wavelengths. Leveraging this nanocomposite gain, the results realize a significant step toward full-color single-material lasers.

  4. Theoretical performance of solar cell based on mini-bands quantum dots

    SciTech Connect (OSTI)

    Aly, Abou El-Maaty M. E-mail: ashraf.nasr@gmail.com; Nasr, A. E-mail: ashraf.nasr@gmail.com

    2014-03-21

    The tremendous amount of research in solar energy is directed toward intermediate band solar cell for its advantages compared with the conventional solar cell. The latter has lower efficiency because the photons have lower energy than the bandgap energy and cannot excite mobile carriers from the valence band to the conduction band. On the other hand, if mini intermediate band is introduced between the valence and conduction bands, then the smaller energy photons can be used to promote charge carriers transfer to the conduction band and thereby the total current increases while maintaining a large open circuit voltage. In this article, the influence of the new band on the power conversion efficiency for structure of quantum dots intermediate band solar cell is theoretically investigated and studied. The time-independent Schrdinger equation is used to determine the optimum width and location of the intermediate band. Accordingly, achievement of a maximum efficiency by changing the width of quantum dots and barrier distances is studied. Theoretical determination of the power conversion efficiency under the two different ranges of QD width is presented. From the obtained results, the maximum power conversion efficiency is about 70.42%. It is carried out for simple cubic quantum dot crystal under fully concentrated light. It is strongly dependent on the width of quantum dots and barrier distances.

  5. Determining the exact number of dye molecules attached to colloidal CdSe/ZnS quantum dots in Frster resonant energy transfer assemblies

    SciTech Connect (OSTI)

    Kaiser, Uwe; Jimenez de Aberasturi, Dorleta; Vzquez-Gonzlez, Margarita; Carrillo-Carrion, Carolina; Niebling, Tobias; Parak, Wofgang J.; Heimbrodt, Wolfram

    2015-01-14

    Semiconductor quantum dots functionalized with organic dye molecules are important tools for biological sensor applications. Energy transfer between the quantum dot and the attached dyes can be utilized for sensing. Though important, the determination of the real number of dye molecules attached per quantum dot is rather difficult. In this work, a method will be presented to determine the number of ATTO-590 dye molecules attached to CdSe/ZnS quantum dots based on time resolved spectral analysis. The energy transfer from the excited quantum dot to the attached ATTO-590 dye leads to a reduced lifetime of the quantum dot's excitons. The higher the concentration of dye molecules, the shorter the excitonic lifetime becomes. However, the number of dye molecules attached per quantum dot will vary. Therefore, for correctly explaining the decay of the luminescence upon photoexcitation of the quantum dot, it is necessary to take into account the distribution of the number of dyes attached per quantum dot. A Poisson distribution of the ATTO-590 dye molecules not only leads to excellent agreement between experimental and theoretical decay curves but also additionally yields the average number of dye molecules attached per quantum dot. In this way, the number of dyes per quantum dot can be conveniently determined.

  6. Toxicological studies of semiconductor quantum dots on immune cells.

    SciTech Connect (OSTI)

    Ricken, James Bryce; Rios, Lynette; Poschet, Jens Fredrich; Bachand, Marlene; Bachand, George David; Greene, Adrienne Celeste; Carroll-Portillo, Amanda

    2008-11-01

    Nanoengineered materials hold a vast promise of enabling revolutionary technologies, but also pose an emerging and potentially serious threat to human and environmental health. While there is increasing knowledge concerning the risks posed by engineered nanomaterials, significant inconsistencies exist within the current data based on the high degree of variability in the materials (e.g., synthesis method, coatings, etc) and biological test systems (e.g., cell lines, whole organism, etc). In this project, we evaluated the uptake and response of two immune cell lines (RAW macrophage and RBL mast cells) to nanocrystal quantum dots (Qdots) with different sizes and surface chemistries, and at different concentrations. The basic experimental design followed a 2 x 2 x 3 factorial model: two Qdot sizes (Qdot 520 and 620), two surface chemistries (amine 'NH{sub 2}' and carboxylic acid 'COOH'), and three concentrations (0, 1 nM, and 1 {micro}M). Based on this design, the following Qdots from Evident Technologies were used for all experiments: Qdot 520-COOH, Qdot 520-NH{sub 2}, Qdot 620-COOH, and Qdot 620-NH{sub 2}. Fluorescence and confocal imaging demonstrated that Qdot 620-COOH and Qdot 620-NH{sub 2} nanoparticles had a greater level of internalization and cell membrane association in RAW and RBL cells, respectively. From these data, a two-way interaction between Qdot size and concentration was observed in relation to the level of cellular uptake in RAW cells, and association with RBL cell membranes. Toxicity of both RBL and RAW cells was also significantly dependent on the interaction of Qdot size and concentration; the 1 {micro}M concentrations of the larger, Qdot 620 nanoparticles induced a greater toxic effect on both cell lines. The RBL data also demonstrate that Qdot exposure can induce significant toxicity independent of cellular uptake. A significant increase in TNF-{alpha} and decrease in IL-10 release was observed in RAW cells, and suggested that Qdot exposure

  7. The use of bulk states to accelerate the band edge state calculation of a semiconductor quantum dot

    SciTech Connect (OSTI)

    Voemel, Christof . E-mail: voemel@eecs.berkeley.edu; Tomov, Stanimire Z. . E-mail: tomov@cs.utk.edu; Wang, Lin-Wang . E-mail: LWWang@lbl.gov; Marques, Osni A. . E-mail: OAMarques@lbl.gov; Dongarra, Jack J. . E-mail: dongarra@cs.utk.edu

    2007-05-01

    We present a new technique to accelerate the convergence of the folded spectrum method in empirical pseudopotential band edge state calculations for colloidal quantum dots. We use bulk band states of the materials constituent of the quantum dot to construct initial vectors and a preconditioner. We apply these to accelerate the convergence of the folded spectrum method for the interior states at the top of the valence and the bottom of the conduction band. For large CdSe quantum dots, the number of iteration steps until convergence decreases by about a factor of 4 compared to previous calculations.

  8. Tunable Quantum Dot Solids: Impact of Interparticle Interactions on Bulk Properties

    SciTech Connect (OSTI)

    Sinclair, Michael B.; Fan, Hongyou; Brener, Igal; Liu, Sheng; Luk, Ting S.; Li, Binsong

    2015-09-01

    QD-solids comprising self-assembled semiconductor nanocrystals such as CdSe are currently under investigation for use in a wide array of applications including light emitting diodes, solar cells, field effect transistors, photodetectors, and biosensors. The goal of this LDRD project was develop a fundamental understanding of the relationship between nanoparticle interactions and the different regimes of charge and energy transport in semiconductor quantum dot (QD) solids. Interparticle spacing was tuned through the application of hydrostatic pressure in a diamond anvil cell, and the impact on interparticle interactions was probed using x-ray scattering and a variety of static and transient optical spectroscopies. During the course of this LDRD, we discovered a new, previously unknown, route to synthesize semiconductor quantum wires using high pressure sintering of self-assembled quantum dot crystals. We believe that this new, pressure driven synthesis approach holds great potential as a new tool for nanomaterials synthesis and engineering.

  9. Sandia Develops a Synthesis of Quantum Dots that Increases the...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy Frontier Research Centers: Solid-State Lighting Science Center for Frontiers of ... Research & Capabilities, Solid-State LightingSandia Develops a Synthesis of Quantum ...

  10. Photo-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dots

    SciTech Connect (OSTI)

    Stepina, N. P.; Dvurechenskii, A. V.; Nikiforov, A. I.; Moers, J.; Gruetzmacher, D.

    2014-08-20

    We study the evolution of electron transport in strongly localized mesoscopic system with quantum dots under small photon flux. Exploring devices with narrow transport channels lead to the observation of giant fluctuations of the photoconductance, which is attributed to the strong dependence of hopping current on the filling of dots by holes. In our experiments, single-photon mode operation is indicated by the linear dependence of the frequency of photo-induced fluctuations on the light intensity and the step-like response of conductance on the pulse excitation. The effect of the light wavelength, measurement temperature, size of the conductive channel on the device efficiency are considered.

  11. Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

    SciTech Connect (OSTI)

    Xu, Ming Jaffré, Alexandre Alvarez, José Kleider, Jean-Paul Boutchich, Mohamed; Jittrong, Apichat; Chokamnuai, Thitipong; Panyakeow, Somsak; Kanjanachuchai, Songphol

    2015-02-27

    We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1–10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.

  12. Superconducting transport in single and parallel double InAs quantum dot Josephson junctions with Nb-based superconducting electrodes

    SciTech Connect (OSTI)

    Baba, Shoji Sailer, Juergen; Deacon, Russell S.; Oiwa, Akira; Shibata, Kenji; Hirakawa, Kazuhiko; Tarucha, Seigo

    2015-11-30

    We report conductance and supercurrent measurements for InAs single and parallel double quantum dot Josephson junctions contacted with Nb or NbTiN superconducting electrodes. Large superconducting gap energy, high critical field, and large switching current are observed, all reflecting the features of Nb-based electrodes. For the parallel double dots, we observe an enhanced supercurrent when both dots are on resonance, which may reflect split Cooper pair tunneling.

  13. Probing the structural dependency of photoinduced properties of colloidal quantum dots using metal-oxide photo-active substrates

    SciTech Connect (OSTI)

    Patty, Kira; Campbell, Quinn; Hamilton, Nathan; West, Robert G.; Sadeghi, Seyed M.; Mao, Chuanbin

    2014-09-21

    We used photoactive substrates consisting of about 1 nm coating of a metal oxide on glass substrates to investigate the impact of the structures of colloidal quantum dots on their photophysical and photochemical properties. We showed during irradiation these substrates can interact uniquely with such quantum dots, inducing distinct forms of photo-induced processes when they have different cores, shells, or ligands. In particular, our results showed that for certain types of core-shell quantum dot structures an ultrathin layer of a metal oxide can reduce suppression of quantum efficiency of the quantum dots happening when they undergo extensive photo-oxidation. This suggests the possibility of shrinking the sizes of quantum dots without significant enhancement of their non-radiative decay rates. We show that such quantum dots are not influenced significantly by Coulomb blockade or photoionization, while those without a shell can undergo a large amount of photo-induced fluorescence enhancement via such blockade when they are in touch with the metal oxide.

  14. Ultrafast spin tunneling and injection in coupled nanostructures of InGaAs quantum dots and quantum well

    SciTech Connect (OSTI)

    Yang, Xiao-Jie Kiba, Takayuki; Yamamura, Takafumi; Takayama, Junichi; Subagyo, Agus; Sueoka, Kazuhisa; Murayama, Akihiro

    2014-01-06

    We investigate the electron-spin injection dynamics via tunneling from an In{sub 0.1}Ga{sub 0.9}As quantum well (QW) to In{sub 0.5}Ga{sub 0.5}As quantum dots (QDs) in coupled QW-QDs nanostructures. These coupled nanostructures demonstrate ultrafast (5 to 20 ps) spin injection into the QDs. The degree of spin polarization up to 45% is obtained in the QDs after the injection, essentially depending on the injection time. The spin injection and conservation are enhanced with thinner barriers due to the stronger electronic coupling between the QW and QDs.

  15. Enhanced photorefractive performance in CdSe quantum-dot-dispersed poly(styrene-co-acrylonitrile) polymers

    SciTech Connect (OSTI)

    Li Xiangping; Embden, Joel van; Chon, James W. M.; Gu Min; Evans, Richard A.

    2010-06-21

    This paper reports on the enhanced photorefractive behavior of a CdSe quantum-dot-dispersed less expensive polymer of poly(styrene-co-acrylonitrile). The capability of CdSe quantum dots used as photosensitizers and the associated photorefractive performance are characterized through a photocurrent experiment and a two-beam coupling experiment, respectively. An enhanced two-beam coupling gain coefficient of 12.2 cm{sup -1} at 46 V/mum was observed owning to the reduced potential barrier. The photorefractive performance per CdSe quantum dot is three orders of magnitude higher than that in the sample sensitized by trinitrofluorenone in poly(styrene-co-acrylonitrile), and almost ten times higher than that in the CdSe quantum-dot-sensitized poly(N-vinylcarbazole) polymers.

  16. Radiative lifetimes of zincblende CdSe/CdS quantum dots

    SciTech Connect (OSTI)

    Gong, Ke; Martin, James E.; Shea-Rohwer, Lauren E.; Lu, Ping; Kelley, David F.

    2015-01-02

    Recent synthetic advances have made available very monodisperse zincblende CdSe/CdS quantum dots having near-unity photoluminescence quantum yields. Because of the absence of nonradiative decay pathways, accurate values of the radiative lifetimes can be obtained from time-resolved PL measurements. Radiative lifetimes can also be obtained from the Einstein relations, using the static absorption spectra and the relative thermal populations in the angular momentum sublevels. We found that one of the inputs into these calculations is the shell thickness, and it is useful to be able to determine shell thickness from spectroscopic measurements. We use an empirically corrected effective mass model to produce a “map” of exciton wavelength as a function of core size and shell thickness. These calculations use an elastic continuum model and the known lattice and elastic constants to include the effect of lattice strain on the band gap energy. The map is in agreement with the known CdSe sizing curve and with the shell thicknesses of zincblende core/shell particles obtained from TEM images. Furthermore, if selenium–sulfur diffusion is included and lattice strain is omitted from the calculation then the resulting map is appropriate for wurtzite CdSe/CdS quantum dots synthesized at high temperatures, and this map is very similar to one previously reported (J. Am. Chem. Soc. 2009, 131, 14299). Radiative lifetimes determined from time-resolved measurements are compared to values obtained from the Einstein relations, and found to be in excellent agreement. For a specific core size (2.64 nm diameter, in the present case), radiative lifetimes are found to decrease with increasing shell thickness. Thus, this is similar to the size dependence of one-component CdSe quantum dots and in contrast to the size dependence in type-II quantum dots.

  17. Radiative lifetimes of zincblende CdSe/CdS quantum dots

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gong, Ke; Martin, James E.; Shea-Rohwer, Lauren E.; Lu, Ping; Kelley, David F.

    2015-01-02

    Recent synthetic advances have made available very monodisperse zincblende CdSe/CdS quantum dots having near-unity photoluminescence quantum yields. Because of the absence of nonradiative decay pathways, accurate values of the radiative lifetimes can be obtained from time-resolved PL measurements. Radiative lifetimes can also be obtained from the Einstein relations, using the static absorption spectra and the relative thermal populations in the angular momentum sublevels. We found that one of the inputs into these calculations is the shell thickness, and it is useful to be able to determine shell thickness from spectroscopic measurements. We use an empirically corrected effective mass model tomore » produce a “map” of exciton wavelength as a function of core size and shell thickness. These calculations use an elastic continuum model and the known lattice and elastic constants to include the effect of lattice strain on the band gap energy. The map is in agreement with the known CdSe sizing curve and with the shell thicknesses of zincblende core/shell particles obtained from TEM images. Furthermore, if selenium–sulfur diffusion is included and lattice strain is omitted from the calculation then the resulting map is appropriate for wurtzite CdSe/CdS quantum dots synthesized at high temperatures, and this map is very similar to one previously reported (J. Am. Chem. Soc. 2009, 131, 14299). Radiative lifetimes determined from time-resolved measurements are compared to values obtained from the Einstein relations, and found to be in excellent agreement. For a specific core size (2.64 nm diameter, in the present case), radiative lifetimes are found to decrease with increasing shell thickness. Thus, this is similar to the size dependence of one-component CdSe quantum dots and in contrast to the size dependence in type-II quantum dots.« less

  18. Spectral Barcoding of Quantum Dots: Deciphering Structural Motifs from the Excitonic Spectra

    SciTech Connect (OSTI)

    Mlinar, V.; Zunger, A.

    2009-01-01

    Self-assembled semiconductor quantum dots (QDs) show in high-resolution single-dot spectra a multitude of sharp lines, resembling a barcode, due to various neutral and charged exciton complexes. Here we propose the 'spectral barcoding' method that deciphers structural motifs of dots by using such barcode as input to an artificial-intelligence learning system. Thus, we invert the common practice of deducing spectra from structure by deducing structure from spectra. This approach (i) lays the foundation for building a much needed structure-spectra understanding for large nanostructures and (ii) can guide future design of desired optical features of QDs by controlling during growth only those structural motifs that decide given optical features.

  19. Tunnel magnetoresistance and linear conductance of double quantum dots strongly coupled to ferromagnetic leads

    SciTech Connect (OSTI)

    Weymann, Ireneusz

    2015-05-07

    We analyze the spin-dependent linear-response transport properties of double quantum dots strongly coupled to external ferromagnetic leads. By using the numerical renormalization group method, we determine the dependence of the linear conductance and tunnel magnetoresistance on the degree of spin polarization of the leads and the position of the double dot levels. We focus on the transport regime where the system exhibits the SU(4) Kondo effect. It is shown that the presence of ferromagnets generally leads the suppression of the linear conductance due to the presence of an exchange field. Moreover, the exchange field gives rise to a transition from the SU(4) to the orbital SU(2) Kondo effect. We also analyze the dependence of the tunnel magnetoresistance on the double dot levels' positions and show that it exhibits a very nontrivial behavior.

  20. Final LDRD report : infrared detection and power generation using self-assembled quantum dots.

    SciTech Connect (OSTI)

    Cederberg, Jeffrey George; Ellis, Robert; Shaner, Eric Arthur

    2008-02-01

    Alternative solutions are desired for mid-wavelength and long-wavelength infrared radiation detection and imaging arrays. We have investigated quantum dot infrared photodetectors (QDIPs) as a possible solution for long-wavelength infrared (8 to 12 {mu}m) radiation sensing. This document provides a summary for work done under the LDRD 'Infrared Detection and Power Generation Using Self-Assembled Quantum Dots'. Under this LDRD, we have developed QDIP sensors and made efforts to improve these devices. While the sensors fabricated show good responsivity at 80 K, their detectivity is limited by high noise current. Following efforts concentrated on how to reduce or eliminate this problem, but with no clear path was identified to the desired performance improvements.

  1. Carrier transfer from InAs quantum dots to ErAs metal nanoparticles

    SciTech Connect (OSTI)

    Haughn, C. R.; Chen, E. Y.; Zide, J. M. O.; Doty, M. F.; Steenbergen, E. H.; Bissell, L. J.; Eyink, K. G.

    2014-09-08

    Erbium arsenide (ErAs) is a semi-metallic material that self-assembles into nanoparticles when grown in GaAs via molecular beam epitaxy. We use steady-state and time-resolved photoluminescence to examine the mechanism of carrier transfer between indium arsenide (InAs) quantum dots and ErAs nanoparticles in a GaAs host. We probe the electronic structure of the ErAs metal nanoparticles (MNPs) and the optoelectronic properties of the nanocomposite and show that the carrier transfer rates are independent of pump intensity. This result suggests that the ErAs MNPs have a continuous density of states and effectively act as traps. The absence of a temperature dependence tells us that carrier transfer from the InAs quantum dots to ErAs MNPs is not phonon assisted. We show that the measured photoluminescence decay rates are consistent with a carrier tunneling model.

  2. Low-temperature transport in ac-driven quantum dots in the Kondo regime

    SciTech Connect (OSTI)

    Lopez, Rosa; Aguado, Ramon; Platero, Gloria; Tejedor, Carlos

    2001-08-15

    We present a fully nonequilibrium calculation of the low-temperature transport properties of a quantum dot in the Kondo regime when an ac potential is applied to the gate. We solve a time-dependent Anderson model with finite on-site Coulomb interaction. The interaction self-energy is calculated up to second order in perturbation theory in the on-site interaction, in the context of the Keldysh nonequilibrium technique, and the effect of the ac voltage is taken into account exactly for all ranges of ac frequencies and ac intensities. The obtained linear conductance and time-averaged density of states of the quantum dot evolve in a nontrivial way as a function of the ac frequency and ac intensity of the harmonic modulation.

  3. Pulsed laser deposition of Mn doped CdSe quantum dots for improved solar cell performance

    SciTech Connect (OSTI)

    Dai, Qilin; Wang, Wenyong E-mail: jtang2@uwyo.edu; Tang, Jinke E-mail: jtang2@uwyo.edu; Sabio, Erwin M.

    2014-05-05

    In this work, we demonstrate (1) a facile method to prepare Mn doped CdSe quantum dots (QDs) on Zn{sub 2}SnO{sub 4} photoanodes by pulsed laser deposition and (2) improved device performance of quantum dot sensitized solar cells of the Mn doped QDs (CdSe:Mn) compared to the undoped QDs (CdSe). The band diagram of photoanode Zn{sub 2}SnO{sub 4} and sensitizer CdSe:Mn QD is proposed based on the incident-photon-to-electron conversion efficiency (IPCE) data. Mn-modified band structure leads to absorption at longer wavelengths than the undoped CdSe QDs, which is due to the exchange splitting of the CdSe:Mn conduction band by the Mn dopant. Three-fold increase in the IPCE efficiency has also been observed for the Mn doped samples.

  4. Carbon quantum dots coated BiVO{sub 4} inverse opals for enhanced photoelectrochemical hydrogen generation

    SciTech Connect (OSTI)

    Nan, Feng; Shen, Mingrong; Fang, Liang E-mail: lfang@suda.edu.cn; Kang, Zhenhui E-mail: lfang@suda.edu.cn; Wang, Junling

    2015-04-13

    Carbon quantum dots (CQDs) coated BiVO{sub 4} inverse opal (io-BiVO{sub 4}) structure that shows dramatic improvement of photoelectrochemical hydrogen generation has been fabricated using electrodeposition with a template. The io-BiVO{sub 4} maximizes photon trapping through slow light effect, while maintaining adequate surface area for effective redox reactions. CQDs are then incorporated to the io-BiVO{sub 4} to further improve the photoconversion efficiency. Due to the strong visible light absorption property of CQDs and enhanced separation of the photoexcited electrons, the CQDs coated io-BiVO{sub 4} exhibit a maximum photo-to-hydrogen conversion efficiency of 0.35%, which is 6 times higher than that of the pure BiVO{sub 4} thin films. This work is a good example of designing composite photoelectrode by combining quantum dots and photonic crystal.

  5. Ultrafast dynamics of type-II GaSb/GaAs quantum dots

    SciTech Connect (OSTI)

    Komolibus, K.; Piwonski, T.; Gradkowski, K.; Reyner, C. J.; Liang, B.; Huffaker, D. L.; Huyet, G.; Houlihan, J.

    2015-01-19

    In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures.

  6. Intermediate band solar cell simulation use InAs quantum dot in GaAs

    SciTech Connect (OSTI)

    Hendra P, I. B. Rahayu, F.; Sahdan, M. F.; Darma, Y.

    2015-04-16

    Intermediate band solar cell (IBSC) has become a new approach in increasing solar cell efficiency significantly. One way to create intermediate band is by proposing quantum dots (QD) technology. One of the important aspects in utilizing IBSC is the absorption of light. In this work we simulated the influence of QD arrangement in order to increase absorption coefficient and solar cell efficiency. We also simulated the influence of QD size to capture a wider light spectrum. We present a simple calculation method with low computing power demand. Results show that the increasing in quantum dot size can increase in capturing wider spectrum of light. Arrangement InAs QD in bulk material GaAs can capture wider spectrum of light and increase the absorption coefficient. The arrangement InAs QD 2 nm in GaAs bulk can increase solar cell efficiency up to 49.68%.

  7. Second harmonic generation from direct band gap quantum dots pumped by femtosecond laser pulses

    SciTech Connect (OSTI)

    Liu, Liwei Wang, Yue; Hu, Siyi; Ren, Yu; Huang, Chen

    2014-02-21

    We report on nonlinear optical experiments performed on Cu{sub 2}S quantum dots (QDs) pumped by femtosecond laser pulses. We conduct a theoretical simulation and experiments to determine their second harmonic generation characteristics. Furthermore, we demonstrate that the QDs have a second harmonic generation conversion efficiency of up to 76%. Our studies suggest that these Cu{sub 2}S QDs can be used for solar cells, bioimaging, biosensing, and electric detection.

  8. (In,Ga)As/GaP electrical injection quantum dot laser

    SciTech Connect (OSTI)

    Heidemann, M. Höfling, S.; Kamp, M.

    2014-01-06

    The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

  9. Tuning photoluminescence of reduced graphene oxide quantum dots from blue to purple

    SciTech Connect (OSTI)

    Liu, Fuchi; Tang, Tao; Feng, Qian; Li, Ming; Liu, Yuan; Tang, Nujiang Zhong, Wei; Du, Youwei

    2014-04-28

    Reduced graphene oxide quantum dots (rGOQDs) were synthesized by annealing GOQDs in H{sub 2} atmosphere. The photoluminescence (PL) properties of GOQDs and the rGOQDs samples were investigated. The results showed that compared to GOQDs, a blue to purple tunable PL of rGOQDs can be obtained by regulating the annealing temperature. The increase fraction of the newly formed isolated sp{sup 2} clusters may be responsible for the observed tunable PL.

  10. Solution-Processed Solar Cells using Colloidal Quantum Dots | MIT-Harvard

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Center for Excitonics Solution-Processed Solar Cells using Colloidal Quantum Dots September 27, 2012 at 3pm/36-428 Ted Sargent Department of Electrical and Computer Engineering - Canada Research Chair in Nanotechnology, University of Toronto, Canada sargent001_000 Abstract: Solution-processed photovoltaics offer a cost-effective path to harvesting the abundant resource that is solar energy. The organic and polymer semiconductors at the heart of these devices generally absorb visible light;

  11. Identification of luminescent surface defect in SiC quantum dots

    SciTech Connect (OSTI)

    Dai, Dejian; Guo, Xiaoxiao; Fan, Jiyang

    2015-02-02

    The surface defect that results in the usually observed blue luminescence in the SiC quantum dots (QDs) remains unclear. We experimentally identify that the surface defect C=O (in COO) is responsible for this constant blue luminescence. The HOC=O [n{sub (OH)} ? ?*{sub (CO)}] interaction between the hydroxyl and carbonyl groups changes the energy levels of C=O and makes the light absorption/emission arise at around 326/438?nm. Another surface defect (SiSi) is identified and its light absorption contributes to both C=O-related luminescence and quantum-confinement luminescence of the SiC QDs.

  12. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode

    SciTech Connect (OSTI)

    Mehta, M.; Michaelis de Vasconcellos, S.; Zrenner, A.; Meier, C. [Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), University of Paderborn, Warburger Street 100, 33098 Paderborn (Germany); Reuter, D.; Wieck, A. D. [Applied Solid State Physics, Ruhr-University of Bochum, Universitaetsstr. 150, 44780 Bochum (Germany)

    2010-10-04

    We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski-Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.

  13. Ab Initio Simulation of Charge Transfer at the Semiconductor Quantum Dot/TiO 2 Interface in Quantum Dot-Sensitized Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xin, Xukai; Li, Bo; Jung, Jaehan; Yoon, Young Jun; Biswas, Rana; Lin, Zhiqun

    2014-07-24

    Quantum dot-sensitized solar cells (QDSSCs) have emerged as a promising solar architecture for next-generation solar cells. The QDSSCs exhibit a remarkably fast electron transfer from the quantum dot (QD) donor to the TiO2 acceptor with size quantization properties of QDs that allows for the modulation of band energies to control photoresponse and photoconversion efficiency of solar cells. In order to understand the mechanisms that underpin this rapid charge transfer, the electronic properties of CdSe and PbSe QDs with different sizes on the TiO2 substrate are simulated using a rigorous ab initio density functional method. Our method capitalizes on localized orbitalmore » basis set, which is computationally less intensive. Quite intriguingly, a remarkable set of electron bridging states between QDs and TiO2 occurring via the strong bonding between the conduction bands of QDs and TiO2 is revealed. Such bridging states account for the fast adiabatic charge transfer from the QD donor to the TiO2 acceptor, and may be a general feature for strongly coupled donor/acceptor systems. All the QDs/TiO2 systems exhibit type II band alignments, with conduction band offsets that increase with the decrease in QD size. This facilitates the charge transfer from QDs donors to TiO2 acceptors and explains the dependence of the increased charge transfer rate with the decreased QD size.« less

  14. Enhancement of photoluminescence in ZnS/ZnO quantum dots interfacial heterostructures

    SciTech Connect (OSTI)

    Rajalakshmi, M.; Sohila, S.; Ramesh, R.; Bhalerao, G.M.

    2012-09-15

    Highlights: ? ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles. ? Interfacial heterostructure formation of ZnS/ZnO QDs is seen in HRTEM. ? Enormous enhancement of UV emission (?10 times) in ZnS/ZnO QDs heterostructure is observed. ? Phonon confinement effect is seen in the Raman spectrum. -- Abstract: ZnS/ZnO quantum dots (QDs) were synthesized by controlled oxidation of ZnS nanoparticles. HRTEM image showed small nanocrystals of size 4 nm and the magnified image of single quantum dot shows interfacial heterostructure formation. The optical absorption spectrum shows a blue shift of 0.19 and 0.23 eV for ZnO and ZnS QDs, respectively. This is due to the confinement of charge carries within the nanostructures. Enormous enhancement in UV emission (10 times) is reported which is attributed to interfacial heterostructure formation. Raman spectrum shows phonons of wurtzite ZnS and ZnO. Phonon confinement effect is seen in the Raman spectrum wherein LO phonon peaks of ZnS and ZnO are shifted towards lower wavenumber side and are broadened.

  15. Visualization of Current and Mapping of Elements in Quantum Dot Solar Cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Niezgoda, J. Scott; Ng, Amy; Poplawsky, Jonathan D.; McBride, James R.; Pennycook, Stephen J.; Rosenthal, Sandra J.

    2015-12-17

    The delicate influence of properties such as high surface state density and organic-inorganic boundaries on the individual quantum dot electronic structure complicates pursuits toward forming quantitative models of quantum dot thin films ab initio. Our report describes the application of electron beam-induced current (EBIC) microscopy to depleted-heterojunction colloidal quantum dot photovoltaics (DH-CQD PVs), a technique which affords one a map of current production within the active layer of a PV device. The effects of QD sample size polydispersity as well as layer thickness in CQD active layers as they pertain to current production within these PVs are imaged and explained.more » The results from these experiments compare well with previous estimations, and confirm the ability of EBIC to function as a valuable empirical tool for the design and betterment of DH-CQD PVs. Lastly, extensive and unexpected PbS QD penetration into the mesoporous TiO2 layer is observed through imaging of device cross sections by energy-dispersive X-ray spectroscopy combined with scanning transmission electron microscopy. Finally, the effects of this finding are discussed and corroborated with the EBIC studies on similar devices.« less

  16. Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gao, Jianbo; Fidler, Andrew F.; Klimov, Victor I.

    2015-09-08

    In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. We report ultra-fast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects ofmore » electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.« less

  17. Investigation of size dependent structural and optical properties of thin films of CdSe quantum dots

    SciTech Connect (OSTI)

    Sharma, Madhulika; Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Bombay, Powai, Mumbai 400076 ; Sharma, A.B.; Mishra, N.; Pandey, R.K.

    2011-03-15

    Research highlights: {yields} CdSe q-dots have been synthesized using simple chemical synthesis route. {yields} Thin film of CdSe quantum dots exhibited self-organized growth. {yields} Size dependent blue shift observed in the absorption edge of CdSe nanocrystallites. {yields} PL emission band corresponds to band edge luminescence and defect luminescence. {yields} Organized growth led to enhancement in luminescence yield of smaller size Q-dots. -- Abstract: Cadmium selenide (CdSe) quantum dots were grown on indium tin oxide substrate using wet chemical technique for possible application as light emitting devices. The structural, morphological and luminescence properties of the as deposited thin films of CdSe Q-dot have been investigated, using X-ray diffraction, transmission electron microscopy, atomic force microscopy and optical and luminescence spectroscopy. The quantum dots have been shown to deposit in an organized array on ITO/glass substrate. The as grown Q-dots exhibited size dependent blue shift in the absorption edge. The effect of quantum confinement also manifested as a blue shift of photoluminescence emission. It is shown that the nanocrystalline CdSe exhibits intense photoluminescence as compared to the large grained polycrystalline CdSe films.

  18. Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices

    SciTech Connect (OSTI)

    Peleshchak, R. M.; Guba, S. K.; Kuzyk, O. V.; Kurilo, I. V.; Dankiv, O. O.

    2013-03-15

    The distribution of hydrostatic strains in Bi{sup 3+}-doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential model. The dependences of strains in the material of spherical InAs quantum dots with substitutional (Bi {yields} As) and interstitial (Bi) impurities on the quantum-dot size are derived. The qualitative correlation of the model with the experiment is discussed. The data on the effect of doping on the morphology of self-assembled InAs:Bi quantum dots in a GaAs matrix are obtained.

  19. Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice

    SciTech Connect (OSTI)

    Sobolev, M. M. Buyalo, M. S.; Nevedomskiy, V. N.; Zadiranov, Yu. M.; Zolotareva, R. V.; Vasil’ev, A. P.; Ustinov, V. M.; Portnoi, E. L.

    2015-10-15

    The spectral characteristics of a laser with an active region based on a ten-layer system of In(Ga)As/GaAs vertically correlated quantum dots with 4.5-nm GaAs spacer layers between InAs quantum dots are studied under the conditions of spontaneous and stimulated emission, depending on the current and the duration of pump pulses. Data obtained by transmission electron microscopy and electroluminescence and absorption polarization anisotropy measurements make it possible to demonstrate that the investigated system of tunnel-coupled InAs quantum dots separated by thin GaAs barriers represents a quantum-dot superlattice. With an increase in the laser pump current, the electroluminescence intensity increases linearly and the spectral position of the electroluminescence maximum shifts to higher energies, which is caused by the dependence of the miniband density-of-states distribution on the pump current. Upon exceeding the threshold current, multimode lasing via the miniband ground state is observed. One of the lasing modes can be attributed to the zero-phonon line, and the other is determined by the longitudinal-optical phonon replica of quantum-dot emission. The results obtained give evidence that, under conditions of the laser pumping of an In(Ga)As/GaAs quantum-dot superlattice, strong coupling between the discrete electron states in the miniband and optical phonons takes place. This leads to the formation of quantum-dot polarons, resulting from the resonant mixing of electronic states whose energy separation is comparable to the optical-phonon energy.

  20. Near-Infrared Localized Surface Plasmon Resonances Arising from Free Carriers in Doped Quantum Dots

    SciTech Connect (OSTI)

    Jain, Prashant K.; Luther, Joey; Ewers, Trevor; Alivisatos, A. Paul

    2010-10-12

    Quantum confinement of electronic wavefunctions in semiconductor quantum dots (QDs) yields discrete atom-like and tunable electronic levels, thereby allowing the engineering of excitation and emission spectra. Metal nanoparticles, on the other hand, display strong resonant interactions with light from localized surface plasmon resonance (LSPR) oscillations of free carriers, resulting in enhanced and geometrically tunable absorption and scattering resonances. The complementary attributes of these nanostructures lends strong interest toward integration into hybrid nanostructures to explore enhanced properties or the emergence of unique attributes arising from their interaction. However, the physicochemical interface between the two components can be limiting for energy transfer and synergistic coupling within such a hybrid nanostructure. Therefore, it is advantageous to realize both attributes, i.e., LSPRs and quantum confinement within the same nanostructure. Here, we describe well-defined LSPRs arising from p-type carriers in vacancy-doped semiconductor quantum dots. This opens up possibilities for light harvesting, non-linear optics, optical sensing and manipulation of solid-state processes in single nanocrystals.

  1. Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers

    SciTech Connect (OSTI)

    Karni, O. Mikhelashvili, V.; Eisenstein, G.; Kuchar, K. J.; Capua, A.; Sęk, G.; Misiewicz, J.; Ivanov, V.; Reithmaier, J. P.

    2014-03-24

    We report on a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength pump-probe measurements were used to determine gain recovery rates, following a powerful optical pump pulse, at various wavelengths for different bias levels and pump excitation powers. The recovery was dominated by coupling between the electronic states in the quantum-dots and the high energy carrier reservoir via capture and escape mechanisms. These processes determine also the wavelength dependencies of gain saturation depth and the asymptotic gain recovery level. Unlike quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their quasi zero-dimensional nature.

  2. A theoretical analysis of the optical absorption properties in one-dimensional InAs/GaAs quantum dot superlattices

    SciTech Connect (OSTI)

    Kotani, Teruhisa; Birner, Stefan; Lugli, Paolo; Hamaguchi, Chihiro

    2014-04-14

    We present theoretical investigations of miniband structures and optical properties of InAs/GaAs one-dimensional quantum dot superlattices (1D-QDSLs). The calculation is based on the multi-band kp theory, including the conduction and valence band mixing effects, the strain effect, and the piezoelectric effect; all three effects have periodic boundary conditions. We find that both the electronic and optical properties of the 1D-QDSLs show unique states which are different from those of well known single quantum dots (QDs) or quantum wires. We predict that the optical absorption spectra of the 1D-QDSLs strongly depend on the inter-dot spacing because of the inter-dot carrier coupling and changing strain states, which strongly influence the conduction and valence band potentials. The inter-miniband transitions form the absorption bands. Those absorption bands can be tuned from almost continuous (closely stacked QD case) to spike-like shape (almost isolated QD case) by changing the inter-dot spacing. The polarization of the lowest absorption peak for the 1D-QDSLs changes from being parallel to the stacking direction to being perpendicular to the stacking direction as the inter-dot spacing increases. In the case of closely stacked QDs, in-plane anisotropy, especially [110] and [11{sup }0] directions also depend on the inter-dot spacing. Our findings and predictions will provide an additional degree of freedom for the design of QD-based optoelectronic devices.

  3. Interdot Coulomb correlation effects and spin-orbit coupling in two carbon nanotube quantum dots

    SciTech Connect (OSTI)

    Wang, Zhen-Hua; Kuang, Xiao-Yu Zhong, Ming-Min; Shao, Peng; Li, Hui

    2014-01-28

    Transport properties of the two-level Kondo effect involving spin, orbital, and pseudospin degrees of freedom are examined in a parallel carbon nanotube double quantum dot with a sufficient interdot Coulomb interaction and small interdot tunneling. The interdot Coulomb correlation effects are taken into account, and it plays an important role in forming bonding and antibonding states. Attached to ferromagnetic leads, the Kondo effect is observed at the interdot Coulomb blockade region with degeneracy of spin, orbital, and pseudospin degrees of freedom. A crossover from a two-level Kondo state involving the fivefold degeneracy of the double quantum dots to an SU(4) spin-orbit Kondo state and to an SU(2) spin-Kondo effect is demonstrated. At finite magnetic field, the splitting of the spin, orbital, and pseudospin Kondo resonance can be restored. For finite intradot Coulomb interaction U, there is a competition between the single-dot Kondo effect and the antiferromagnetic exchange coupling J{sub AFM}, resulting in the suppression of the Kondo resonance. Moreover, both the J{sub AFM} and the Zeeman interactions compete, leading to need a much higher value of the magnetic field to compensate for the Kondo splitting.

  4. III-nitride quantum dots for ultra-efficient solid-state lighting: III-nitride quantum dots for ultra-efficient solid-state lighting

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wierer, Jonathan J.; Tansu, Nelson; Fischer, Arthur J.; Tsao, Jeffrey Y.

    2016-05-23

    III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of highermore » spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. If constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.« less

  5. On-chip electrically controlled routing of photons from a single quantum dot

    SciTech Connect (OSTI)

    Bentham, C.; Coles, R. J.; Royall, B.; O'Hara, J.; Prtljaga, N.; Fox, A. M.; Skolnick, M. S.; Wilson, L. R.; Itskevich, I. E.; Clarke, E.

    2015-06-01

    Electrical control of on-chip routing of photons emitted by a single InAs/GaAs self-assembled quantum dot (SAQD) is demonstrated in a photonic crystal cavity-waveguide system. The SAQD is located inside an H1 cavity, which is coupled to two photonic crystal waveguides. The SAQD emission wavelength is electrically tunable by the quantum-confined Stark effect. When the SAQD emission is brought into resonance with one of two H1 cavity modes, it is preferentially routed to the waveguide to which that mode is selectively coupled. This proof of concept provides the basis for scalable, low-power, high-speed operation of single-photon routers for use in integrated quantum photonic circuits.

  6. Ab Initio Simulation of Charge Transfer at the Semiconductor Quantum Dot/TiO 2 Interface in Quantum Dot-Sensitized Solar Cells

    SciTech Connect (OSTI)

    Xin, Xukai; Li, Bo; Jung, Jaehan; Yoon, Young Jun; Biswas, Rana; Lin, Zhiqun

    2014-07-24

    Quantum dot-sensitized solar cells (QDSSCs) have emerged as a promising solar architecture for next-generation solar cells. The QDSSCs exhibit a remarkably fast electron transfer from the quantum dot (QD) donor to the TiO2 acceptor with size quantization properties of QDs that allows for the modulation of band energies to control photoresponse and photoconversion efficiency of solar cells. In order to understand the mechanisms that underpin this rapid charge transfer, the electronic properties of CdSe and PbSe QDs with different sizes on the TiO2 substrate are simulated using a rigorous ab initio density functional method. Our method capitalizes on localized orbital basis set, which is computationally less intensive. Quite intriguingly, a remarkable set of electron bridging states between QDs and TiO2 occurring via the strong bonding between the conduction bands of QDs and TiO2 is revealed. Such bridging states account for the fast adiabatic charge transfer from the QD donor to the TiO2 acceptor, and may be a general feature for strongly coupled donor/acceptor systems. All the QDs/TiO2 systems exhibit type II band alignments, with conduction band offsets that increase with the decrease in QD size. This facilitates the charge transfer from QDs donors to TiO2 acceptors and explains the dependence of the increased charge transfer rate with the decreased QD size.

  7. Nanocrystal quantum dots: building blocks for tunable optical amplifiers and lasers

    SciTech Connect (OSTI)

    Mikhailovsky, A. A.; Malko, A. V.; Klimov, V. I.; Leatherdale, C. A.; Eisler, H-J.; Bawendi, M.; Hollingsworth, J. A.

    2001-01-01

    We study optical processes relevant to optical amplification and lasing in CdSe nanocrystal quantum dots (NQD). NQDs are freestanding nanoparticles prepared using solution-based organometallic reactions originally developed for the Cd chalcogenides, CdS, CdSe and CdTe [J. Am. Chem. Soc. 115, 8706 (1993)]. We investigate NQDs with diameters ranging from 2 to 8 nm. Due to strong quantum confinement, they exhibit size-dependent spectral tunability over an energy range as wide as several hundred meV. We observe a strong effect of the matrix/solvent on optical gain properties of CdSe NQDs. In most of the commonly used solvents (such as hexane and toluene), gain is suppressed due to strong photoinduced absorption associated with carriers trapped at solvent-related interface states. In contrast, matrix-free close packed NQD films (NQD solids) exhibit large optical gain with a magnitude that is sufficiently high for the optical gain to successfully compete with multiparticle Auger recombination [Science 287, 10117 (2000)]. These films exhibit narrowband stimulated emission at both cryogenic and room temperature, and the emission color is tunable with dot size [Science 290, 314 (2000)]. Moreover, the NQD films can be incorporated into microcavities of different geometries (micro-spheres, wires, tubes) that produce lasing in whispering gallery modes. The facile preparation, chemical flexibility and wide-range spectral tunability due to strong quantum confinement are the key advantages that should motivate research into NQD applications in optical amplifiers and lasers.

  8. Resonant electronic transport through a triple quantum-dot with Λ-type level structure under dual radiation fields

    SciTech Connect (OSTI)

    Guan, Chun; Xing, Yunhui; Zhang, Chao; Ma, Zhongshui

    2014-08-14

    Due to quantum interference, light can transmit through dense atomic media, a phenomenon known as electromagnetically induced transparency (EIT). We propose that EIT is not limited to light transmission and there is an electronic analog where resonant transparency in charge transport in an opaque structure can be induced by electromagnetic radiation. A triple-quantum-dots system with Λ-type level structure is generally opaque due to the level in the center dot being significantly higher and therefore hopping from the left dot to the center dot is almost forbidden. We demonstrate that an electromagnetically induced electron transparency (EIET) in charge of transport can indeed occur in the Λ-type system. The direct evidence of EIET is that an electron can travel from the left dot to the right dot, while the center dot apparently becomes invisible. We analyze EIET and the related shot noise in both the zero and strong Coulomb blockade regimes. It is found that the EIET (position, height, and symmetry) can be tuned by several controllable parameters of the radiation fields, such as the Rabi frequencies and detuning frequencies. The result offers a transparency/opaque tuning technique in charge transport using interfering radiation fields.

  9. Shaping the composition profiles in heteroepitaxial quantum dots: Interplay of thermodynamic and kinetic effects

    SciTech Connect (OSTI)

    Georgiou, C.; Leontiou, T.; Kelires, P. C.

    2014-07-15

    Atomistic Monte Carlo simulations, coupling thermodynamic and kinetic effects, resolve a longstanding controversy regarding the origin of composition profiles in heteroepitaxial SiGe quantum dots. It is shown that profiles with cores rich in the unstrained (Si) component derive from near-equilibrium processes and intraisland diffusion. Profiles with cores rich in the strained (Ge) component are of nonequilibrium nature, i.e., they are strain driven but kinetically limited. They are shaped by the distribution of kinetic barriers of atomic diffusion in the islands. The diffusion pathways are clearly revealed for the first time. Geometrical kinetics play a minor role.

  10. Understanding polarization properties of InAs quantum dots by atomistic modeling of growth dynamics

    SciTech Connect (OSTI)

    Tasco, Vittorianna; Todaro, Maria Teresa; De Giorgi, Milena; Passaseo, Adriana; Usman, Muhammad

    2013-12-04

    A model for realistic InAs quantum dot composition profile is proposed and analyzed, consisting of a double region scheme with an In-rich internal core and an In-poor external shell, in order to mimic the atomic scale phenomena such as In-Ga intermixing and In segregation during the growth and overgrowth with GaAs. The parameters of the proposed model are derived by reproducing the experimentally measured polarization data. Further understanding is developed by analyzing the strain fields which suggests that the two-composition model indeed results in lower strain energies than the commonly applied uniform composition model.

  11. Charge transport and memristive properties of graphene quantum dots embedded in poly(3-hexylthiophene) matrix

    SciTech Connect (OSTI)

    Cosmin Obreja, Alexandru; Cristea, Dana; Radoi, Antonio; Gavrila, Raluca; Comanescu, Florin; Kusko, Cristian; Mihalache, Iuliana

    2014-08-25

    We show that graphene quantum dots (GQD) embedded in a semiconducting poly(3-hexylthiophene) polymeric matrix act as charge trapping nanomaterials. In plane current-voltage (I-V) measurements of thin films realized from this nanocomposite deposited on gold interdigitated electrodes revealed that the GQD enhanced dramatically the hole transport. I-V characteristics exhibited a strong nonlinear behavior and a pinched hysteresis loop, a signature of a memristive response. The transport properties of this nanocomposite were explained in terms of a trap controlled space charge limited current mechanism.

  12. White-blue electroluminescence from a Si quantum dot hybrid light-emitting diode

    SciTech Connect (OSTI)

    Xin, Yunzi; Nishio, Kazuyuki; Saitow, Ken-ichi

    2015-05-18

    A silicon (Si) quantum dot (QD)-based hybrid inorganic/organic light-emitting diode (LED) was fabricated via solution processing. This device exhibited white-blue electroluminescence at a low applied voltage of 6?V, with 78% of the effective emission obtained from the Si QDs. This hybrid LED produced current and optical power densities 280 and 350 times greater than those previously reported for such device. The superior performance of this hybrid device was obtained by both the prepared Si QDs and the optimized layer structure and thereby improving carrier migration through the hybrid LED and carrier recombination in the homogeneous Si QD layer.

  13. High performance continuous wave 1.3 μm quantum dot lasers on silicon

    SciTech Connect (OSTI)

    Liu, Alan Y. Norman, Justin; Zhang, Chong; Snyder, Andrew; Lubyshev, Dmitri; Fastenau, Joel M.; Liu, Amy W. K.; Gossard, Arthur C.; Bowers, John E.

    2014-01-27

    We demonstrate record performance 1.3 μm InAs quantum dot lasers grown on silicon by molecular beam epitaxy. Ridge waveguide lasers fabricated from the as-grown material achieve room temperature continuous wave thresholds as low as 16 mA, output powers exceeding 176 mW, and lasing up to 119 °C. P-modulation doping of the active region improves T{sub 0} to the range of 100–200 K while maintaining low thresholds and high output powers. Device yield is presented showing repeatable performance across different dies and wafers.

  14. Kondo time scales for quantum dots: Response to pulsed bias potentials

    SciTech Connect (OSTI)

    Plihal, Martin; Langreth, David C.; Nordlander, Peter

    2000-05-15

    The response of a quantum dot in the Kondo regime to rectangular pulsed bias potentials of various strengths and durations is studied theoretically. It is found that the rise time is faster than the fall time, and also faster than time scales normally associated with the Kondo problem. For larger values of the pulsed bias, one can induce dramatic oscillations in the induced current with a frequency approximating the splitting between the Kondo peaks that would be present in steady state. The effect persists in the total charge transported per pulse, which should facilitate the experimental observation of the phenomenon. (c) 2000 The American Physical Society.

  15. Determination of the Exciton Binding Energy in CdSe Quantum Dots

    SciTech Connect (OSTI)

    Meulenberg, R; Lee, J; Wolcott, A; Zhang, J; Terminello, L; van Buuren, T

    2009-10-27

    The exciton binding energy (EBE) in CdSe quantum dots (QDs) has been determined using x-ray spectroscopy. Using x-ray absorption and photoemission spectroscopy, the conduction band (CB) and valence band (VB) edge shifts as a function of particle size have been determined and combined to obtain the true band gap of the QDs (i.e. without and exciton). These values can be compared to the excitonic gap obtained using optical spectroscopy to determine the EBE. The experimental EBE results are compared with theoretical calculations on the EBE and show excellent agreement.

  16. An oleic acid-capped CdSe quantum-dot sensitized solar cell

    SciTech Connect (OSTI)

    Chen Jing; Song, J. L.; Deng, W. Q.; Sun, X. W.; Jiang, C. Y.; Lei, W.; Huang, J. H.; Liu, R. S.

    2009-04-13

    In this letter, we report an oleic acid (OA)-capped CdSe quantum-dot sensitized solar cell (QDSSC) with an improved performance. The TiO{sub 2}/OA-CdSe photoanode in a two-electrode device exhibited a photon-to-current conversion efficiency of 17.5% at 400 nm. At AM1.5G irradiation with 100 mW/cm{sup 2} light intensity, the QDSSCs based on OA-capped CdSe showed a power conversion efficiency of about 1%. The function of OA was to increase QD loading, extend the absorption range and possibly suppress the surface recombination.

  17. Three dimensional time-gated tracking of non-blinking quantum dots in live cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    DeVore, Matthew S.; Werner, James H.; Goodwin, Peter M.; Keller, Aaron M.; Hollingsworth, Jennifer A.; Wilson, Bridget S.; Cleyrat, Cedric; Lidke, Diane S.; Ghosh, Yagnaseni; Stewart, Michael H.; et al

    2015-03-12

    Single particle tracking has provided a wealth of information about biophysical processes such as motor protein transport and diffusion in cell membranes. However, motion out of the plane of the microscope or blinking of the fluorescent probe used as a label generally limits observation times to several seconds. Here, we overcome these limitations by using novel non-blinking quantum dots as probes and employing a custom 3D tracking microscope to actively follow motion in three dimensions (3D) in live cells. As a result, signal-to-noise is improved in the cellular milieu through the use of pulsed excitation and time-gated detection.

  18. Mid infrared optical properties of Ge/Si quantum dots with different doping level

    SciTech Connect (OSTI)

    Sofronov, A. N.; Firsov, D. A.; Vorobjev, L. E.; Shalygin, V. A.; Panevin, V. Yu.; Vinnichenko, M. Ya.; Tonkikh, A. A.; Danilov, S. N.

    2013-12-04

    Optical characterization of the Ge/Si quantum dots using equilibrium and photo-induced absorption spectroscopy in the mid-infrared spectral range was performed in this work. Equilibrium absorption spectra were measured in structures with various doping levels for different light polarizations. Photo-induced absorption spectra measured in undoped structure under interband optical excitation of non-equilibrium charge carriers demonstrate the same features as doped sample in equilibrium conditions. Hole energy spectrum was determined from the analysis of experimental data.

  19. Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby

    DOE Patents [OSTI]

    Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu

    2014-04-01

    A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

  20. Switching between ground and excited states by optical feedback in a quantum dot laser diode

    SciTech Connect (OSTI)

    Virte, Martin; Breuer, Stefan; Sciamanna, Marc; Panajotov, Krassimir

    2014-09-22

    We demonstrate switching between ground state and excited state emission in a quantum-dot laser subject to optical feedback. Even though the solitary laser emits only from the excited state, we can trigger the emission of the ground state by optical feedback. We observe recurrent but incomplete switching between the two emission states by variation of the external cavity length in the sub-micrometer scale. We obtain a good qualitative agreement of experimental results with simulation results obtained by a rate equation that accounts for the variations of the feedback phase.

  1. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  2. Highly polarized light emission by isotropic quantum dots integrated with magnetically aligned segmented nanowires

    SciTech Connect (OSTI)

    Uran, Can; Erdem, Talha; Guzelturk, Burak; Perkgz, Nihan Kosku; Jun, Shinae; Jang, Eunjoo; Demir, Hilmi Volkan

    2014-10-06

    In this work, we demonstrate a proof-of-concept system for generating highly polarized light from colloidal quantum dots (QDs) coupled with magnetically aligned segmented Au/Ni/Au nanowires (NWs). Optical characterizations reveal that the optimized QD-NW coupled structures emit highly polarized light with an s-to p-polarization (s/p) contrast as high as 15:1 corresponding to a degree of polarization of 0.88. These experimental results are supported by the finite-difference time-domain simulations, which demonstrate the interplay between the inter-NW distance and the degree of polarization.

  3. Nonequilibrium thermal effects on exciton time correlations in coupled semiconductor quantum dots

    SciTech Connect (OSTI)

    Castillo, J. C.; Rodrguez, F. J.; Quiroga, L.

    2013-12-04

    Theoretical guides to test 'macroscopic realism' in solid-state systems under quantum control are highly desirable. Here, we report on the evolution of a Leggett-Garg inequality (LGI), a combination of two-time correlations, in an out-of-equilibrium set up consisting of two interacting excitons confined in separate semiconductor quantum dots which are coupled to independent baths at different temperatures (T{sub 1} ? T{sub 2}). In a Markovian steady-state situation we found a rich variety of dynamical behaviors in different sectors of the average temperature (T{sub M}?=?(T{sub 1}+T{sub 2})/2) vs. coupling strength to the reservoirs (?) space parameter. For high T{sub M} and ? values the LGI is not violated, as expected. However, by decreasing T{sub M} or ? a sector of parameters appears where the LGI is violated at thermal equilibrium (T{sub 1} = T{sub 2}) and the violation starts decreasing when the system is moved out of the equilibrium. Surprisingly, at even lower T{sub M} values, for any ?, there is an enhancement of the LGI violation by exposing the system to a temperature gradient, i.e. quantum correlations increase in a nonequilibrium thermal situation. Results on LGI violations in a steady-state regime are compared with other non-locality-dominated quantum correlation measurements, such as concurrence and quantum discord, between the two excitons under similar temperature gradients.

  4. Fluorescence resonance energy transfer measured by spatial photon migration in CdSe-ZnS quantum dots colloidal systems as a function of concentration

    SciTech Connect (OSTI)

    Azevedo, G.; Monte, A. F. G.; Reis, A. F.; Messias, D. N.

    2014-11-17

    The study of the spatial photon migration as a function of the concentration brings into attention the problem of the energy transfer in quantum dot embedded systems. By measuring the photon propagation and its spatial dependence, it is possible to understand the whole dynamics in a quantum dot system, and also improve their concentration dependence to maximize energy propagation due to radiative and non-radiative processes. In this work, a confocal microscope was adapted to scan the spatial distribution of photoluminescence from CdSe-ZnS core-shell quantum dots in colloidal solutions. The energy migration between the quantum dots was monitored by the direct measurement of the photon diffusion length, according to the diffusion theory. We observed that the photon migration length decreases by increasing the quantum dot concentration, this kind of behavior has been regarded as a signature of Frster resonance energy transfer in the system.

  5. Polarization-Driven Stark Shifts in Quantum Dot Luminescence from Single CdSe/oligo-PPV Nanoparticles

    SciTech Connect (OSTI)

    Early, K. T.; Sudeep, P. K.; Emrick, Todd; Barnes, M. D.

    2010-05-12

    We demonstrate polarization-induced spectral shifts and associated linearly polarized absorption and emission in single CdSe/oligo-(phenylene vinylene) (CdSe/OPV) nanoparticles. A mechanism for these observations is presented in which charge separation from photoexcited ligands results in a significant Stark distortion of the quantum dot electron/hole wavefunctions. This distortion results in an induced linear polarization and an associated red shift in band-edge photoluminescence. These studies suggest the use of single quantum dots as local charge mobility probes.

  6. Elastic tunneling charge transport mechanisms in silicon quantum dots /SiO{sub 2} thin films and superlattices

    SciTech Connect (OSTI)

    Illera, S. Prades, J. D.; Cirera, A.

    2015-05-07

    The role of different charge transport mechanisms in Si/SiO{sub 2} structures has been studied. A theoretical model based on the Transfer Hamiltonian Formalism has been developed to explain experimental current trends in terms of three different elastic tunneling processes: (1) trap assisted tunneling; (2) transport through an intermediate quantum dot; and (3) direct tunneling between leads. In general, at low fields carrier transport is dominated by the quantum dots whereas, for moderate and high fields, transport through deep traps inherent to the SiO{sub 2} is the most relevant process. Besides, current trends in Si/SiO{sub 2} superlattice structure have been properly reproduced.

  7. Localized surface plasmon and exciton interaction in silver-coated cadmium sulphide quantum dots

    SciTech Connect (OSTI)

    Ghosh, P.; Rustagi, K. C.; Vasa, P.; Singh, B. P.

    2015-05-15

    Localized surface plasmon and exciton coupling has been investigated on colloidal solutions of silver-coated CdS nanoparticles (NPs), synthesized by gamma irradiation. Two broad photoluminescence (PL) bands (blue/red) corresponding to band to band and defect state transitions have been observed for the bare and coated samples. In case of bare CdS NPs, the intensity of the red PL peak is about ten times higher than the blue PL peak intensity. However, on coating the CdS NPs with silver, the peak intensity of the blue PL band gets enhanced and becomes equal to that of the red PL band. High-resolution transmission electron microscopic (HRTEM) images adequately demonstrate size distribution of these metal/semiconductor nanocomposites. UV-Vis absorption studies show quantum confinement effect in these semiconductor quantum dot (SQD) systems. Absorption spectrum of silver-coated SQDs shows signature of surface plasmon-exciton coupling which has been theoretically verified.

  8. Light-assisted recharging of graphene quantum dots in fluorographene matrix

    SciTech Connect (OSTI)

    Antonova, I. V. [A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Acad. Lavrentiev Avenue 13, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Pirogov Street 2, Novosibirsk 630090 (Russian Federation); Nebogatikova, N. A.; Prinz, V. Ya. [A.V. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Acad. Lavrentiev Avenue 13, Novosibirsk 630090 (Russian Federation); Popov, V. I.; Smagulova, S. A. [North - East Federal University, Yakutsk (Russian Federation)

    2014-10-07

    In the present study, the charge transient spectroscopy was used to analyze the transient relaxation of charges in graphene and bilayer-graphene quantum dot (QD) systems formed by chemical functionalization of graphene and few-layer graphene layers. A set of activation energies (one to three different values) for the emission of charges from QDs sized 50 to 70 nm, most likely proceeding via the thermal activation of charge carriers from QD quantum confinement levels, were deduced from measurements performed in the dark. Daylight illumination of samples during measurements was found to result in a strong decrease of the activation energies and in an involvement of an athermal process in the charge relaxation phenomenon. The time of the light-assisted emission of charge carriers from QDs proved to be two to four orders of magnitude shorter than the time of their emission from QDs under no-illumination conditions.

  9. Epitaxial lift-off of quantum dot enhanced GaAs single junction solar cells

    SciTech Connect (OSTI)

    Bennett, Mitchell F.; Bittner, Zachary S.; Forbes, David V.; Hubbard, Seth M.; Rao Tatavarti, Sudersena; Wibowo, Andree; Pan, Noren; Chern, Kevin; Phillip Ahrenkiel, S.

    2013-11-18

    InAs/GaAs strain-balanced quantum dot (QD) n-i-p solar cells were fabricated by epitaxial lift-off (ELO), creating thin and flexible devices that exhibit an enhanced sub-GaAs bandgap current collection extending into the near infrared. Materials and optical analysis indicates that QD quality after ELO processing is preserved, which is supported by transmission electron microscopy images of the QD superlattice post-ELO. Spectral responsivity measurements depict a broadband resonant cavity enhancement past the GaAs bandedge, which is due to the thinning of the device. Integrated external quantum efficiency shows a QD contribution to the short circuit current density of 0.23?mA/cm{sup 2}.

  10. Quantum-Size Effects on the Pressure-Induced Direct-to-Indirect Band-Gap Transition in InP Quantum Dots

    SciTech Connect (OSTI)

    Fu, H.; Zunger, A.

    1998-06-01

    We predict that the difference in quantum confinement energies of {Gamma} -like and X -like conduction states in a covalent quantum dot will cause the direct-to-indirect transition to occur at substantially lower pressure than in the bulk material. Furthermore, the first-order transition in the bulk is predicted to become, for certain dot sizes, a second-order transition. Measurements of the {open_quotes}anticrossing gap{close_quotes} could thus be used to obtain unique information on the {Gamma}-X- L intervalley coupling, predicted here to be surprisingly large (50{endash}100thinspthinspmeV). {copyright} {ital 1998} {ital The American Physical Society}

  11. Energy-selective optical excitation and detection in InAs/InP quantum dot ensembles using a one-dimensional optical microcavity

    SciTech Connect (OSTI)

    Gamouras, A.; Britton, M.; Khairy, M. M.; Mathew, R.; Hall, K. C.; Dalacu, D.; Poole, P.; Poitras, D.; Williams, R. L.

    2013-12-16

    We demonstrate the selective optical excitation and detection of subsets of quantum dots (QDs) within an InAs/InP ensemble using a SiO{sub 2}/Ta{sub 2}O{sub 5}-based optical microcavity. The low variance of the exciton transition energy and dipole moment tied to the narrow linewidth of the microcavity mode is expected to facilitate effective qubit encoding and manipulation in a quantum dot ensemble with ease of quantum state readout relative to qubits encoded in single quantum dots.

  12. Advanced phosphors

    DOE Patents [OSTI]

    Xiang, Xiao-Dong; Sun, Xiaodong; Schultz, Peter G.

    2000-01-01

    This invention relates to new phosphor materials and to combinatorial methods of synthesizing and detecting the same. In addition, methods of using phosphors to generate luminescence are also disclosed.

  13. Theoretical simulation of carrier capture and relaxation rates in quantum-dot semiconductor optical amplifiers

    SciTech Connect (OSTI)

    Wu, Yunhu; Zhang, Guoping; Guo, Ling; Qi, Guoqun; Li, Xiaoming

    2014-06-14

    Based on Auger scattering mechanism, carrier-carrier scattering dynamics between the two-dimensional carrier reservoir (also called wetting layer, i.e., WL) and the confined quantum dot ground and first excited state in quantum-dot semiconductor optical amplifiers (QD-SOAs) are investigated theoretically in this paper. The scattering rates for independent electron and hole densities are calculated. The results show an ultra-fast carrier capture (relaxation) rate up to 1 ps{sup −1}, and there is a complex dependence of the Coulomb scattering rates on the WL electron and hole densities. In addition, due to the different effective mass and the level distribution, the scattering rates for electron and hole are very different. Finally, in order to provide a direction to control (increase or decrease) the input current in realistic QD-SOA systems, a simple method is proposed to determine the trends of the carrier recovery rates with the WL carrier densities in the vicinity of the steady-state.

  14. Magnetic field induced quantum dot brightening in liquid crystal synergized magnetic and semiconducting nanoparticle composite assemblies

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Amaral, Jose Jussi; Wan, Jacky; Rodarte, Andrea L.; Ferri, Christopher; Quint, Makiko T.; Pandolfi, Ronald J.; Scheibner, Michael; Hirst, Linda S.; Ghosh, Sayantani

    2014-10-22

    The design and development of multifunctional composite materials from artificial nano-constituents is one of the most compelling current research areas. This drive to improve over nature and produce ‘meta-materials’ has met with some success, but results have proven limited with regards to both the demonstration of synergistic functionalities and in the ability to manipulate the material properties post-fabrication and in situ. Here, magnetic nanoparticles (MNPs) and semiconducting quantum dots (QDs) are co-assembled in a nematic liquid crystalline (LC) matrix, forming composite structures in which the emission intensity of the quantum dots is systematically and reversibly controlled with a small appliedmore » magnetic field (<100 mT). This magnetic field-driven brightening, ranging between a two- to three-fold peak intensity increase, is a truly cooperative effect: the LC phase transition creates the co-assemblies, the clustering of the MNPs produces LC re-orientation at atypical low external field, and this re-arrangement produces compaction of the clusters, resulting in the detection of increased QD emission. These results demonstrate a synergistic, reversible, and an all-optical process to detect magnetic fields and additionally, as the clusters are self-assembled in a fluid medium, they offer the possibility for these sensors to be used in broad ranging fluid-based applications.« less

  15. Photoinduced Surface Oxidation and Its Effect on the Exciton Dynamics of CdSe Quantum Dots

    SciTech Connect (OSTI)

    Hines, Douglas A.; Becker, Matthew A.; Kamat, Prashant V.

    2012-11-14

    With increased interest in semiconductor nanoparticles for use in quantum dot solar cells there comes a need to understand the long-term photostability of such materials. Colloidal CdSe quantum dots (QDs) were suspended in toluene and stored in combinations of light/dark and N{sub 2}/O{sub 2} to simulate four possible benchtop storage environments. CdSe QDs stored in a dark, oxygen-free environment were observed to better retain their optical properties over the course of 90 days. The excited state lifetimes, determined through femtosecond transient absorption spectroscopy, of air-equilibrated samples exposed to light exhibit a decrease in average lifetime (0.81 ns) when compared to samples stored in a nitrogen/dark environment (8.3 ns). A photoetching technique commonly used for controlled reduction of QD size was found to induce energetic trap states to CdSe QDs and accelerate the rate of electron-hole recombination. X-ray absorption near edge structure (XANES) analysis confirms surface oxidation, the extent of which is shown to be dependent on the thickness of the ligand shell.

  16. Strong exciton-photon coupling with colloidal quantum dots in a high-Q bilayer microcavity

    SciTech Connect (OSTI)

    Giebink, Noel C; Wiederrecht, Gary P.; Wasielewski, Michael R

    2011-01-01

    We demonstrate evanescently coupled bilayer microcavities with Q -factors exceeding 250 fabricated by a simple spin-coating process. The cavity architecture consists of a slab waveguide lying upon a low refractive index spacer layer supported by a glass substrate. For a lossless guide layer, the cavity Q depends only on the thickness of the low index spacer and in principle can reach arbitrarily high values. We demonstrate the versatility of this approach by constructing cavities with a guide layer incorporating CdSe/ZnS core/shell quantum dots, where we observe strong coupling and hybridization between the 1S(e)-1S{sub 3/2} (h) and 1S(e)-2S{sub 3/2} (h) exciton states mediated by the cavity photon. This technique greatly simplifies the fabrication of high-Q planar microcavities for organic and inorganic quantum dot thin films and opens up new opportunities for the study of nonlinear optical phenomena in these materials.

  17. Magnetic field induced quantum dot brightening in liquid crystal synergized magnetic and semiconducting nanoparticle composite assemblies

    SciTech Connect (OSTI)

    Amaral, Jose Jussi; Wan, Jacky; Rodarte, Andrea L.; Ferri, Christopher; Quint, Makiko T.; Pandolfi, Ronald J.; Scheibner, Michael; Hirst, Linda S.; Ghosh, Sayantani

    2014-10-22

    The design and development of multifunctional composite materials from artificial nano-constituents is one of the most compelling current research areas. This drive to improve over nature and produce meta-materials has met with some success, but results have proven limited with regards to both the demonstration of synergistic functionalities and in the ability to manipulate the material properties post-fabrication and in situ. Here, magnetic nanoparticles (MNPs) and semiconducting quantum dots (QDs) are co-assembled in a nematic liquid crystalline (LC) matrix, forming composite structures in which the emission intensity of the quantum dots is systematically and reversibly controlled with a small applied magnetic field (<100 mT). This magnetic field-driven brightening, ranging between a two- to three-fold peak intensity increase, is a truly cooperative effect: the LC phase transition creates the co-assemblies, the clustering of the MNPs produces LC re-orientation at atypical low external field, and this re-arrangement produces compaction of the clusters, resulting in the detection of increased QD emission. These results demonstrate a synergistic, reversible, and an all-optical process to detect magnetic fields and additionally, as the clusters are self-assembled in a fluid medium, they offer the possibility for these sensors to be used in broad ranging fluid-based applications.

  18. Effect of Ligands on Characteristics of (CdSe)13 Quantum Dot

    SciTech Connect (OSTI)

    Gao, Yang; Zhou, Bo; Kang, Seung-gu; Xin, Minsi; Yang, Ping; Dai, Xing; Wang, Zhigang; Zhou, Ruhong

    2014-01-01

    The widespread applications of quantum dots (QDs) have spurred an increasing interest in the study of their coating ligands, which can not only protect the electronic structures of the central QDs, but also control their permeability through biological membranes with both size and shape. In this work, we have used density functional theory (DFT) to investigate the electronic structures of (CdSe)13 passivated by OPMe2(CH2)nMe ligands with different lengths and various numbers of branches (Me=methyl group, n = 0, 1-3). Our results show that the absorption peak in the ultraviolet-visible (UV-vis) spectra displays a clear blue-shift, on the scale of ~100 nm, upon the binding of ligands. Once the total number of ligands bound with (CdSe)13 reached a saturated number (9 or 10), no more blue-shift occurred in the absorption peak in the UV-vis spectra. On the other hand, the aliphatic chain length of ligands has a negligible effect on the optical properties of the QD core. Analyses of the bonding characteristics confirm that optical transitions are dominantly governed by the central QD core rather than the organic passivation. Interestingly, the density of states (DOS) share similar characteristics as vibrational spectra, even though there is no coordination vibration mode between the ligands and the central QD. These findings might provide insights on the material design for the passivation of quantum dots for biomedical applications.

  19. Ex Situ Formation of Metal Selenide Quantum Dots Using Bacterially Derived Selenide Precursors

    SciTech Connect (OSTI)

    Fellowes, Jonathan W.; Pattrick, Richard; Lloyd, Jon; Charnock, John M.; Coker, Victoria S.; Mosselmans, JFW; Weng, Tsu-Chien; Pearce, Carolyn I.

    2013-04-12

    Luminescent quantum dots were synthesized using bacterially derived selenide (SeII-) as the precursor. Biogenic SeII- was produced by the reduction of Se-IV by Veillonella atypica and compared directly against borohydride-reduced Se-IV for the production of glutathione-stabilized CdSe and beta-mercaptoethanol-stabilized ZnSe nanoparticles by aqueous synthesis. Biological SeII- formed smaller, narrower size distributed QDs under the same conditions. The growth kinetics of biologically sourced CdSe phases were slower. The proteins isolated from filter sterilized biogenic SeII- included a methylmalonyl-CoA decarboxylase previously characterized in the closely related Veillonella parvula. XAS analysis of the glutathione-capped CdSe at the S K-edge suggested that sulfur from the glutathione was structurally incorporated within the CdSe. A novel synchrotron based XAS technique was also developed to follow the nucleation of biological and inorganic selenide phases, and showed that biogenic SeII- is more stable and more resistant to beam-induced oxidative damage than its inorganic counterpart. The bacterial production of quantum dot precursors offers an alternative, 'green' synthesis technique that negates the requirement of expensive, toxic chemicals and suggests a possible link to the exploitation of selenium contaminated waste streams.

  20. Revolutionary Method for Increasing the Efficiency of White Light Quantum Dot LEDs

    SciTech Connect (OSTI)

    Duty, Chad E [ORNL; Bennett, Charlee J C [ORNL; Sabau, Adrian S [ORNL; Jellison Jr, Gerald Earle [ORNL; Boudreaux, Philip R [ORNL; Walker, Steven C [ORNL; Ott, Ronald D [ORNL

    2011-01-01

    Covering a light-emitting diode (LED) with quantum dots (QDs) can produce a broad spectrum of white light. However, current techniques for applying QDs to LEDs suffer from a high density of defects and a non-uniform distribution of QDs, which respec-tively diminish the efficiency and quality of emitted light. Oak Ridge National Laboratory (ORNL) has the unique capability to thermally anneal QD structures at extremely high power densities for very short durations. This process, called pulse thermal proc-essing (PTP), reduces the number of point defects while main-taining the size and shape of the original QD nanostructure. Therefore, the efficiency of the QD wavelength conversion layer is improved without altering the emission spectrum defined by the size distribution of the quantum dot nanoparticles. The cur-rent research uses a thermal model to predict annealing tempera-tures during PTP and demonstrates up to a 300% increase in pho-toluminescence for QDs on passive substrates

  1. Plasmonic giant quantum dots: Hybrid nanostructures for truly simultaneous optical imaging, photothermal effect and thermometry

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Karan, Niladri S.; Keller, Aaron M.; Sampat, Siddharth; Roslyak, Oleksiy; Arefin, Ayesha; Hanson, Christina J.; Casson, Joanna L.; Desireddy, Anil; Ghosh, Yagnaseni; Piryatinski, Andrei; et al

    2015-02-09

    Hybrid semiconductor–metal nanoscale constructs are of both fundamental and practical interest. Semiconductor nanocrystals are active emitters of photons when stimulated optically, while the interaction of light with nanosized metal objects results in scattering and ohmic damping due to absorption. In a combined structure, the properties of both components can be realized together. At the same time, metal–semiconductor coupling may intervene to modify absorption and/or emission processes taking place in the semiconductor, resulting in a range of effects from photoluminescence quenching to enhancement. We show here that photostable ‘giant’ quantum dots when placed at the center of an ultrathin gold shellmore » retain their key optical property of bright and blinking-free photoluminescence, while the metal shell imparts efficient photothermal transduction. The latter is despite the highly compact total particle size (40–60 nm “inorganic” diameter and <100 nm hydrodynamic diameter) and the very thin nature of the optically transparent Au shell. Furthermore, the sensitivity of the quantum dot emission to local temperature provides a novel internal thermometer for recording temperature during infrared irradiation-induced photothermal heating.« less

  2. Green route synthesis of high quality CdSe quantum dots for applications in light emitting devices

    SciTech Connect (OSTI)

    Bera, Susnata, E-mail: susnata.bera@gmail.com [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Singh, Shashi B. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Ray, S.K., E-mail: physkr@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2012-05-15

    Investigation was made on light emitting diodes fabricated using CdSe quantum dots. CdSe quantum dots were synthesized chemically using olive oil as the capping agent, instead of toxic phosphine. Room temperature photoluminescence investigation showed sharp 1st excitonic emission peak at 568 nm. Bi-layer organic/inorganic (P3HT/CdSe) hybrid light emitting devices were fabricated by solution process. The electroluminescence study showed low turn on voltage ({approx}2.2 V) .The EL peak intensity was found to increase by increasing the operating current. - Graphical abstract: Light emitting diode was fabricated using CdSe quantum dots using olive oil as the capping agent, instead of toxic phosphine. Bi-layer organic/inorganic (P3HT/CdSe) hybrid light emitting device shows strong electroluminescence in the range 630-661 nm. Highlights: Black-Right-Pointing-Pointer CdSe Quantum dots were synthesized using olive oil as the capping agent. Black-Right-Pointing-Pointer Light emitting device was fabricated using CdSe QDs/P3HT polymer heterojunction. Black-Right-Pointing-Pointer The I-V characteristics study showed low turn on voltage at {approx}2.2 V. Black-Right-Pointing-Pointer The EL peak intensity increases with increasing the operating current.

  3. High Extraction Phosphors for Solid State Lighting

    SciTech Connect (OSTI)

    Chris Summers; Hisham Menkara; Brent Wagner

    2011-09-30

    We have developed high-index, high efficiency bulk luminescent materials and novel nano-sized phosphors for improved solid-state white LED lamps. These advances can potentially contribute to reducing the loss in luminous efficiencies due to scattering, re-absorption, and thermal quenching. The bulk and nanostructured luminescent materials investigated are index matched to GaN and have broad and size-tunable absorption bands, size and impurity tuned emission bands, size-driven elimination of scattering effects, and a separation between absorption and emission bands. These innovations were accomplished through the use of novel synthesis techniques suitable for high volume production for LED lamp applications. The program produced a full-color set of high quantum yield phosphors with high chemical stability. In the bulk phosphor study, the ZnSeS:Cu,Ag phosphor was optimized to achieve >91% efficiency using erbium (Er) and other activators as sensitizers. Detailed analysis of temperature quenching effects on a large number of ZnSeS:Cu,Ag,X and strontium- and calcium-thiogallate phosphors lead to a breakthrough in the understanding of the ??anti-quenching? behavior and a physical bandgap model was developed of this phenomena. In a follow up to this study, optimized phosphor blends for high efficiency and color performance were developed and demonstrated a 2-component phosphor system with good white chromaticity, color temperature, and high color rendering. By extending the protocols of quantum dot synthesis, ??large? nanocrystals, greater than 20 nm in diameter were synthesized and exhibited bulk-like behavior and blue light absorption. The optimization of ZnSe:Mn nanophosphors achieved ~85% QE The limitations of core-shell nanocrystal systems were addressed by investigating alternative deltadoped structures. To address the manufacturability of these systems, a one-pot manufacturing protocol was developed for ZnSe:Mn nanophosphors. To enhance the stability of

  4. TiO2 Nanotubes with a ZnO Thin Energy Barrier for Improved Current Efficiency of CdSe Quantum-Dot-Sensitized Solar Cells

    SciTech Connect (OSTI)

    Lee, W.; Kang, S. H.; Kim, J. Y.; Kolekar, G. B.; Sung, Y. E.; Han, S. H.

    2009-01-01

    This paper reports the formation of a thin ZnO energy barrier between a CdSe quantum dot (Q dots) sensitizer and TiO{sub 2} nanotubes (TONTs) for improved current efficiency of Q dot-sensitized solar cells. The formation of a ZnO barrier between TONTs and the Q dot sensitizer increased the short-circuit current under illumination and also reduced the dark current in a dark environment. The power conversion efficiency of Q dot-sensitized TONT solar cells increased by 25.9% in the presence of the ZnO thin layer due to improved charge-collecting efficiency and reduced recombination.

  5. III-nitride quantum dots for ultra-efficient solid-state lighting

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wierer, Jr., Jonathan J.; Tansu, Nelson; Fischer, Arthur J.; Tsao, Jeffrey Y.

    2016-05-01

    III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of highermore » spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. In conclusion, if constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.« less

  6. High color rendering index white light emitting diodes fabricated from a combination of carbon dots and zinc copper indium sulfide quantum dots

    SciTech Connect (OSTI)

    Sun, Chun; Liu, Wenyan; Zhang, Xiaoyu; Zhang, Yu E-mail: wyu6000@gmail.com; Wang, Yu; Kalytchuk, Sergii; Kershaw, Stephen V.; Rogach, Andrey L.; Zhang, Tieqiang; Zhao, Jun; Yu, William W. E-mail: wyu6000@gmail.com

    2014-06-30

    In a line with most recent trends in developing non-toxic fluorescent nanomaterials, we combined blue emissive carbon dots with green and red emissive zinc copper indium sulfide (ZCIS) core/shell quantum dots (QDs) to achieve white light-emitting diodes (WLEDs) with a high color rendering index of 93. This indicates that ZCIS QDs, with their broad emission bands, can be employed to effectively make up the emission of carbon dots in the yellow and red regions to produce WLEDs in the wide region of color temperature by tuning the volume ratio of these constituting luminophores. Their electroluminescence characteristics including color rendering index, Commission Internationale de l'Eclairage (CIE) color coordinates, and color temperatures were evaluated as a function of forward current. The CIE-1931 chromaticity coordinates of the as-prepared WLEDs, exhibiting good stability, were slightly shifted from (0.321, 0.312) at 10?mA to (0.351, 0.322) at 30?mA, which was mainly caused by the different thermal quenching coefficients of carbon dots and ZCIS QDs.

  7. Coupling single giant nanocrystal quantum dots to the fundamental mode of patch nanoantennas through fringe field

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Feng; Karan, Niladri S.; Minh Nguyen, Hue; Ghosh, Yagnaseni; Hollingsworth, Jennifer A.; Htoon, Han

    2015-09-23

    Through single dot spectroscopy and numerical simulation studies, we demonstrate that the fundamental mode of gold patch nanoantennas have fringe-field resonance capable of enhancing the nano-emitters coupled around the edge of the patch antenna. This fringe-field coupling is used to enhance the radiative rates of core/thick-shell nanocrystal quantum dots (g-NQDs) that cannot be embedded into the ultra-thin dielectric gap of patch nanoantennas due to their large sizes. We attain 14 and 3 times enhancements in single exciton radiative decay rate and bi-exciton emission efficiencies of g-NQDs respectively, with no detectable metal quenching. Our numerical studies confirmed our experimental results andmore » further reveal that patch nanoantennas can provide strong emission enhancement for dipoles lying not only in radial direction of the circular patches but also in the direction normal to the antennas surface. Finally, this provides a distinct advantage over the parallel gap-bar antennas that can provide enhancement only for the dipoles oriented across the gap.« less

  8. Spin polarized current from multiply-coupled rings with Zeeman-split quantum dots

    SciTech Connect (OSTI)

    Hedin, Eric R.; Joe, Yong S.

    2014-03-21

    We investigate transmission resonances and conductance properties of multiple, serially connected, direct-contact nanoscale rings using the tight-binding model. Quantum dots (QDs) are embedded in the two arms of each ring, and Zeeman-splitting of the QD energy levels is incorporated into the system Hamiltonian. Transmission bands develop as the number of rings in series increases, with a band-gap which is sensitive to the degree of Zeeman splitting and the initial settings of the QD site energy values. The current vs. voltage characteristics of the system can be modulated between Ohmic and semiconducting as a function of the Zeeman splitting. In addition, spin-polarized current results for selected ranges of the Fermi energy.

  9. Seeding of InP islands on InAs quantum dot templates

    SciTech Connect (OSTI)

    Medeiros-Ribeiro, G.; Maltez, R. L.; Bernussi, A. A.; Ugarte, D.; de Carvalho, W.

    2001-06-01

    The ability of stacking layers of islands and their corresponding alignment have prompted a number of studies. The main focus so far has been on stacking self-assembled quantum dot (QD) layers of the same material and composition. Our goal is to create systems of coupled QDs of different electronic properties, aiming at hybridization of their different electronic levels. In this work, we investigate the early stages of the coupling of alternate InAs{endash}InP QD layers through a GaAs spacer layer. We have found that by using an InAs layer containing QDs as seeds, we can control the size, shape and density of InP islands by varying the spacer thickness. We have observed a significant improvement of the InP island size uniformity, as well as an induced size reduction, thus providing an extra degree of tunability previously available only through growth kinetics. {copyright} 2001 American Institute of Physics.

  10. Strongly modified four-wave mixing in a coupled semiconductor quantum dot-metal nanoparticle system

    SciTech Connect (OSTI)

    Paspalakis, Emmanuel; Evangelou, Sofia; Kosionis, Spyridon G.; Terzis, Andreas F.

    2014-02-28

    We study the four-wave mixing effect in a coupled semiconductor quantum dot-spherical metal nanoparticle structure. Depending on the values of the pump field intensity and frequency, we find that there is a critical distance that changes the form of the spectrum. Above this distance, the four-wave mixing spectrum shows an ordinary three-peaked form and the effect of controlling its magnitude by changing the interparticle distance can be obtained. Below this critical distance, the four-wave mixing spectrum becomes single-peaked; and as the interparticle distance decreases, the spectrum is strongly suppressed. The behavior of the system is explained using the effective Rabi frequency that creates plasmonic metaresonances in the hybrid structure. In addition, the behavior of the effective Rabi frequency is explained via an analytical solution of the density matrix equations.

  11. Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots

    SciTech Connect (OSTI)

    Zhang, Lei, E-mail: mejswu@ust.hk; Chen, Haibin, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk; Wu, Jingshen, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong and Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong); Bi, Xianghong, E-mail: takubatch@gmail.com [Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong)

    2014-05-15

    Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

  12. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  13. InAs quantum dot morphology after capping with In, N, Sb alloyed thin films

    SciTech Connect (OSTI)

    Keizer, J. G.; Koenraad, P. M.; Ulloa, J. M.; Utrilla, A. D.

    2014-02-03

    Using a thin capping layer to engineer the structural and optical properties of InAs/GaAs quantum dots (QDs) has become common practice in the last decade. Traditionally, the main parameter considered has been the strain in the QD/capping layer system. With the advent of more exotic alloys, it has become clear that other mechanisms significantly alter the QD size and shape as well. Larger bond strengths, surfactants, and phase separation are known to act on QD properties but are far from being fully understood. In this study, we investigate at the atomic scale the influence of these effects on the morphology of capped QDs with cross-sectional scanning tunneling microscopy. A broad range of capping materials (InGaAs, GaAsSb, GaAsN, InGaAsN, and GaAsSbN) are compared. The QD morphology is related to photoluminescence characteristics.

  14. Kondo-type transport through a quantum dot under magnetic fields

    SciTech Connect (OSTI)

    Dong, Bing; Lei, X. L.

    2001-06-15

    In this paper, we investigate the Kondo correlation effects on linear and nonlinear transport in a quantum dot connected to reservoirs under finite magnetic fields, using the slave-boson mean field approach suggested by Kotliar and Ruckenstein [Phys. Rev. Lett. >57, 1362 (1986)]. A brief comparison between the present formulation and other slave-boson formulation is presented to justify this approach. The numerical results show that the linear conductance near electron-hole symmetry is suppressed by the application of the magnetic fields, but an anomalous enhancement is predicted in the nonsymmetry regime. The effect of external magnetic fields on the nonlinear differential conductances is discussed for the Kondo system. A significant reduction of the peak splitting is observed due to the strong Kondo correlation, which agrees well with experimental data.

  15. Narrow-line self-assembled GaAs quantum dots for plasmonics

    SciTech Connect (OSTI)

    Zhang, Hongyi; Huo, Yongheng; Schmidt, Oliver G.; Lindfors, Klas; Chen, Yonghai; Rastelli, Armando; Lippitz, Markus

    2015-03-09

    We demonstrate efficient coupling of excitons in near-surface GaAs quantum dots (QDs) to surface-plasmon polaritons. We observe distinct changes in the photoluminescence of the emitters as the distance between the QDs and the gold interface decreases. Based on an electric point-dipole model, we identify the surface plasmon launching rates for different QD-surface distances. While in conventional far-field experiments only a few percent of the emitted photons can be collected due to the high refractive index semiconductor substrate, already for distances around 30 nm the plasmon launching-rate becomes comparable to the emission rate into bulk photon modes, thus much larger than the photon collection rate. For even smaller distances, the degrading optical properties of the emitter counterweight the increasing coupling efficiency to plasmonic modes.

  16. Shot noise of charge current in a quantum dot responded by rotating and oscillating magnetic fields

    SciTech Connect (OSTI)

    Zhao, Hong-Kang Zou, Wei-Ke; Chen, Qiao

    2014-09-07

    We have investigated the shot noise and Fano factor of the dynamic spin-polarized quantum dot under the perturbations of a rotating magnetic field (RMF), and an oscillating magnetic field (OMF) by employing the non-equilibrium Green's function approach. The shot noise is enhanced from sub-Poissonian to super-Poissonian due to the application of RMF and OMF, and it is controlled sensitively by the tilt angle θ of RMF. The magnitude of shot noise increases as the photon energy ℏω of OMF increases, and its valley eventually is reversed to peaks as the photon energy is large enough. Double-peak structure of Fano factor is exhibited as the frequency of OMF increases to cover a large regime. The Zeeman energy μ{sub 0}B{sub 0} acts as an effective gate bias to exhibit resonant behavior, and novel peak emerges associated with the applied OMF.

  17. Emission Properties from ZnO Quantum Dots Dispersed in SiO{sub 2} Matrix

    SciTech Connect (OSTI)

    Panigrahi, Shrabani; Basak, Durga

    2011-07-15

    Dispersion of ZnO quantum dots in SiO{sub 2} matrix has been achieved in two techniques based on StOeber method to form ZnO QDs-SiO{sub 2} nanocomposites. Sample A is formed with random dispersion by adding tetraethyl orthosilicate (TEOS) to an ethanolic solution of ZnO nanoparticles and sample B is formed with a chain-like ordered dispersion by adding ZnO nanoparticles to an already hydrolyzed ethanolic TEOS solution. The photoluminescence spectra of the as-grown nanocomposites show strong emission in the ultraviolet region. When annealed at higher temperature, depending on the sample type, these show strong red or white emission. Interestingly, when the excitation is removed, the orderly dispersed ZnO QDs-SiO{sub 2} composite shows a very bright blue fluorescence visible by naked eyes for few seconds indicating their promise for display applications.

  18. Matched slow optical soliton pairs via biexciton coherence in quantum dots

    SciTech Connect (OSTI)

    Yang Wenxing; Chen Aixi; Lee, Ray-Kuang; Wu Ying

    2011-07-15

    We theoretically investigate the simultaneous formation and stable propagation of slow optical soliton pairs in semiconductor quantum dots with a four-level biexciton-exciton cascade configuration. Owing to the destructive interference set up by two continuous wave control fields that couple to a biexciton state, the linear as well as nonlinear dispersion can be dramatically enhanced simultaneously with the absorptions of two weak probe fields being almost suppressed. These results reveal that the detrimental distortions of the two weak-pulsed probe fields due to dispersion effects can be well balanced by the self-phase modulation effect under very low input light intensity, which leads to the slow temporal optical soliton pairs with matched group velocity and amplitude. We also show that the propagation of slow optical solitons can be strongly modified by the biexciton coherence.

  19. Photo-instability of CdSe/ZnS quantum dots in poly(methylmethacrylate) film

    SciTech Connect (OSTI)

    Zhang, Hongyi; Liu, Yu; Ye, Xiaoling; Chen, Yonghai

    2013-12-28

    The photo-instability of CdSe/ZnS quantum dots (QDs) has been studied under varied conditions. We discussed the main features of the evolution of photoluminescence (PL) intensity and energy at different laser powers, which showed critical dependences on the environment. The PL red shift in a vacuum showed strong temperature dependence, from which we concluded that the thermal activation energy for trapping states of the charge carriers was about 14.7 meV. Furthermore, the PL spectra showed asymmetric evolution during the laser irradiation, for which two possible explanations were discussed. Those results provided a comprehensive picture for the photo-instability of the colloidal QDs under different conditions.

  20. Advanced method for increasing the efficiency of white light quantum dot LEDs

    SciTech Connect (OSTI)

    Duty, Chad E [ORNL; Bennett, Charlee J C [ORNL; Sabau, Adrian S [ORNL; Jellison Jr, Gerald Earle [ORNL; Boudreaux, Philip R [ORNL; Walker, Steven C [ORNL; Ott, Ronald D [ORNL

    2011-01-01

    Covering a light-emitting diode (LED) with quantum dots (QDs) can produce a broad spectrum of white light. However, current techniques for applying QDs to LEDs suffer from a high density of defects and a non-uniform distribution of QDs, which, respectively, diminish the efficiency and quality of emitted light. Oak Ridge National Laboratory (ORNL) has the unique capability to thermally anneal QD structures at extremely high power densities for very short durations. This process, called pulse thermal processing (PTP), reduces the number of point defects while maintaining the size and shape of the original QD nanostructure. Therefore, the efficiency of the QD wavelength conversion layer is improved without altering the emission spectrum defined by the size distribution of theQD nanoparticles. The current research uses a thermal model to predict annealing temperatures during PTP and demonstrates up to a 300% increase in photoluminescence for QDs on passive substrates.

  1. Composite materials with metal oxide attached to lead chalcogenide nanocrystal quantum dots with linkers

    SciTech Connect (OSTI)

    Fuke, Nobuhiro; Koposov, Alexey Y; Sykora, Milan; Hoch, Laura

    2014-12-16

    Composite materials useful for devices such as photoelectrochemical solar cells include a substrate, a metal oxide film on the substrate, nanocrystalline quantum dots (NQDs) of lead sulfide, lead selenide, and lead telluride, and linkers that attach the NQDs to the metal oxide film. Suitable linkers preserve the 1s absorption peak of the NQDs. A suitable linker has a general structure A-B-C where A is a chemical group adapted for binding to a MO.sub.x and C is a chemical group adapted for binding to a NQD and B is a divalent, rigid, or semi-rigid organic spacer moiety. Other linkers that preserve the 1s absorption peak may also be used.

  2. Effect of geometry and composition on the intraband transitions of holes in quantum dots

    SciTech Connect (OSTI)

    Singh, Satish Kumar Kumar, Jitendra

    2014-12-28

    The effect of shape and size anisotropy on unipolar intraband transitions of holes in quantum dots (QDs) is studied. The optical matrix elements are calculated for transitions of holes in valence band. To get the optical matrix elements, energy eigenvalues and eigenvectors are calculated using 4??4 Luttinger Hamiltonian in the effective mass approximation. The formulation is applied to InGaAs/GaAs QD with parabolic confinement potential in xy-plane. The optical matrix elements for intraband hole transitions are calculated for x and y polarised light. The transitions are considered from ground state to other excited states. The effect of In concentration on optical matrix elements is also investigated. It is important to note that the transitions of holes are governed by the character of initial and final states for different light polarisations that give specific transition selection rules. It is found that the polarisation is strongly dependent on the in-plane anisotropy of the QDs.

  3. Dropout dynamics in pulsed quantum dot lasers due to mode jumping

    SciTech Connect (OSTI)

    Sokolovskii, G. S.; Dudelev, V. V.; Deryagin, A. G.; Novikov, I. I.; Maximov, M. V.; Ustinov, V. M.; Kuchinskii, V. I.; Viktorov, E. A.; Abusaa, M.; Danckaert, J.; Kolykhalova, E. D.; Soboleva, K. K.; Zhukov, A. E.; Sibbett, W.; Rafailov, E. U.; Erneux, T.

    2015-06-29

    We examine the response of a pulse pumped quantum dot laser both experimentally and numerically. As the maximum of the pump pulse comes closer to the excited-state threshold, the output pulse shape becomes unstable and leads to dropouts. We conjecture that these instabilities result from an increase of the linewidth enhancement factor α as the pump parameter comes close to the excitated state threshold. In order to analyze the dynamical mechanism of the dropout, we consider two cases for which the laser exhibits either a jump to a different single mode or a jump to fast intensity oscillations. The origin of these two instabilities is clarified by a combined analytical and numerical bifurcation diagram of the steady state intensity modes.

  4. Dynamic characteristics of two-state lasing quantum dot lasers under large signal modulation

    SciTech Connect (OSTI)

    Lv, Zun-Ren; Ji, Hai-Ming Luo, Shuai; Gao, Feng; Xu, Feng; Yang, Tao; Xiao, De-Hang

    2015-10-15

    Large signal modulation characteristics of the simultaneous ground-state (GS) and excited-state (ES) lasing quantum dot lasers are theoretically investigated. Relaxation oscillations of ‘0 → 1’ and ‘1 → 0’ in the GS lasing region (Region I), the transition region from GS lasing to two-state lasing (Region II) and the two-state lasing region (Region III) are compared and analyzed. It is found that the overshooting power and settling time in both Regions I and III decrease as the bias current increases. However, there exist abnormal behaviors of the overshooting power and settling time in Region II owing to the occurrence of ES lasing, which lead to fuzzy eye diagrams of the GS and ES lasing. Moreover, the ES lasing in Region III possesses much better eye diagrams because of its shorter settling time and smaller overshooting power over the GS lasing in Region I.

  5. Excitonic enhancement of nonradiative energy transfer to bulk silicon with the hybridization of cascaded quantum dots

    SciTech Connect (OSTI)

    Yeltik, Aydan; Guzelturk, Burak; Akhavan, Shahab; Ludwig Hernandez-Martinez, Pedro; Volkan Demir, Hilmi

    2013-12-23

    We report enhanced sensitization of silicon through nonradiative energy transfer (NRET) of the excitons in an energy-gradient structure composed of a cascaded bilayer of green- and red-emitting CdTe quantum dots (QDs) on bulk silicon. Here NRET dynamics were systematically investigated comparatively for the cascaded energy-gradient and mono-dispersed QD structures at room temperature. We show experimentally that NRET from the QD layer into silicon is enhanced by 40% in the case of an energy-gradient cascaded structure as compared to the mono-dispersed structures, which is in agreement with the theoretical analysis based on the excited state population-depopulation dynamics of the QDs.

  6. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  7. Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film

    SciTech Connect (OSTI)

    Cho, Chang-Hee; Kim, Baek-Hyun; Kim, Tae-Wook; Park, Seong-Ju; Park, Nae-Man; Sung, Gun-Yong

    2005-04-04

    The effect of hydrogen passivation on the charge storage characteristics of two types of silicon nitride films containing silicon quantum dots (Si QDs) grown by SiH{sub 4}+N{sub 2} and SiH{sub 4}+NH{sub 3} plasma was investigated. The transmission electron microscope analysis and the capacitance-voltage measurement showed that the silicon nitride film grown by SiH{sub 4}+NH{sub 3} plasma has a lower interface trap density and a higher density of Si QDs compared to that grown by SiH{sub 4}+N{sub 2} plasma. It was also found that the charge retention characteristics in the Si QDs were greatly enhanced in the samples grown by means of SiH{sub 4}+NH{sub 3} plasma, due to the hydrogen passivation of the defects in the silicon nitride films by NH{sub 3} during the growth of the Si QDs.

  8. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

    SciTech Connect (OSTI)

    Yerino, Christopher D.; Jung, Daehwan; Lee, Minjoo Larry; Simmonds, Paul J.; Liang, Baolai; Huffaker, Diana L.; Schneider, Christian; Unsleber, Sebastian; Vo, Minh; Kamp, Martin; Hfling, Sven

    2014-12-22

    Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6??eV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.

  9. Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots

    SciTech Connect (OSTI)

    Xiao, Xiaoyin; Lu, Ping; Fischer, Arthur J.; Coltrin, Michael E.; Wang, George T.; Koleske, Daniel D.; Tsao, Jeffrey Y.

    2015-11-18

    Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In2O3 and/or Ga2O3) form which interfere with quantum dot formation. Furthermore, at pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.

  10. Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xiao, Xiaoyin; Lu, Ping; Fischer, Arthur J.; Coltrin, Michael E.; Wang, George T.; Koleske, Daniel D.; Tsao, Jeffrey Y.

    2015-11-18

    Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In2O3 and/or Ga2O3) form which interfere with quantum dot formation. Furthermore, at pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.

  11. Charging/discharging behavior and mechanism of silicon quantum dots embedded in amorphous silicon carbide films

    SciTech Connect (OSTI)

    Wen, Xixing; Zeng, Xiangbin Zheng, Wenjun; Liao, Wugang; Feng, Feng

    2015-01-14

    The charging/discharging behavior of Si quantum dots (QDs) embedded in amorphous silicon carbide (a-SiC{sub x}) was investigated based on the Al/insulating layer/Si QDs embedded in a-SiC{sub x}/SiO{sub 2}/p-Si (metal-insulator-quantum dots-oxide-silicon) multilayer structure by capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. Transmission electron microscopy and Raman scattering spectroscopy measurements reveal the microstructure and distribution of Si QDs. The occurrence and shift of conductance peaks indicate the carrier transfer and the charging/discharging behavior of Si QDs. The multilayer structure shows a large memory window of 5.2 eV at ±8 V sweeping voltage. Analysis of the C-V and G-V results allows a quantification of the Coulomb charging energy and the trapped charge density associated with the charging/discharging behavior. It is found that the memory window is related to the size effect, and Si QDs with large size or low Coulomb charging energy can trap two or more electrons by changing the charging voltage. Meanwhile, the estimated lower potential barrier height between Si QD and a-SiC{sub x}, and the lower Coulomb charging energy of Si QDs could enhance the charging and discharging effect of Si QDs and lead to an enlarged memory window. Further studies of the charging/discharging mechanism of Si QDs embedded in a-SiC{sub x} can promote the application of Si QDs in low-power consumption semiconductor memory devices.

  12. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  13. Pseudopotential study of electron-hole excitations in colloidal free-standing InAs quantum dots

    SciTech Connect (OSTI)

    Williamson, A. J.; Zunger, Alex

    2000-01-15

    Excitonic spectra are calculated for free-standing, surface passivated, InAs quantum dots using atomic pseudopotentials for the single-particle states and screened Coulomb interactions for the two-body terms. We present an analysis of the single particle states involved in each excitation in terms of their angular momenta and Bloch-wave parentage. We find that (i) in agreement with other pseudopotential studies of CdSe and InP quantum dots, but in contrast to k{center_dot}p calculations, the dot wave functions exhibit strong odd-even angular momentum envelope function mixing (e.g., s with p) and large valence-conduction coupling. (ii) While the pseudopotential approach produced very good agreement with experiment for free-standing, colloidal CdSe and InP dots, and for self-assembled (GaAs-embedded) InAs dots, here the predicted spectrum does not agree well with the measured (ensemble average over dot sizes) spectra. (1) Our calculated excitonic gap is larger than the photoluminescence measured one, and (2) while the spacing between the lowest excitons is reproduced, the spacings between higher excitons is not fit well. Discrepancy (1) could result from surface state emission. As for (2), agreement is improved when account is taken of the finite-size distribution in the experimental data. (iii) We find that the single-particle gap scales as R{sup -1.01} (not R{sup -2}), that the screened (unscreened) electron-hole Coulomb interaction scales as R{sup -1.79} (R{sup -0.7}), and that the excitonic gap scales as R{sup -0.9}. These scaling laws are different from those expected from simple models. (c) 2000 The American Physical Society.

  14. Thermoluminescent phosphor

    DOE Patents [OSTI]

    Lasky, Jerome B.; Moran, Paul R.

    1978-01-01

    A thermoluminescent phosphor comprising LiF doped with boron and magnesium is produced by diffusion of boron into a conventional LiF phosphor doped with magnesium. Where the boron dopant is made to penetrate only the outer layer of the phosphor, it can be used to detect shallowly penetrating radiation such as tritium beta rays in the presence of a background of more penetrating radiation.

  15. Finite-size scaling analysis of spin correlations and fluctuations of two quantum dots in a T-shape geometry

    SciTech Connect (OSTI)

    Heidrich-Meisner, Fabian; Martins, G. B.; Al Hassanieh, Khaled A; Feiguin, A. E.; Dagotto, Elbio R

    2008-01-01

    The study of interacting nanostructures such as quantum dots is a playground for several novel numerical approaches. Recently developed methods such as the time-dependent density matrix renormalization approach or the embedded-cluster approximation rely on the numerical solution of clusters of finite-size. For the interpretation of numerical results, it is important to understand finite-size and boundary effects. Here, we study spin fluctuations and spin spin correlations of two dots coupled in a T-shape geometry. Depending on odd even effects, quite different results emerge from clusters that do not differ much in size. r 2007 Elsevier B.V. All rights reserved.

  16. Photo-modulated thin film transistor based on dynamic charge transfer within quantum-dots-InGaZnO interface

    SciTech Connect (OSTI)

    Liu, Xiang; Yang, Xiaoxia; Liu, Mingju; Tao, Zhi; Wei, Lei Li, Chi Zhang, Xiaobing; Wang, Baoping; Dai, Qing; Nathan, Arokia

    2014-03-17

    The temporal development of next-generation photo-induced transistor across semiconductor quantum dots and Zn-related oxide thin film is reported in this paper. Through the dynamic charge transfer in the interface between these two key components, the responsibility of photocurrent can be amplified for scales of times (?10{sup 4}?A/W 450?nm) by the electron injection from excited quantum dots to InGaZnO thin film. And this photo-transistor has a broader waveband (from ultraviolet to visible light) optical sensitivity compared with other Zn-related oxide photoelectric device. Moreover, persistent photoconductivity effect can be diminished in visible waveband which lead to a significant improvement in the device's relaxation time from visible illuminated to dark state due to the ultrafast quenching of quantum dots. With other inherent properties such as integrated circuit compatible, low off-state current and high external quantum efficiency resolution, it has a great potential in the photoelectric device application, such as photodetector, phototransistor, and sensor array.

  17. Metallic nanoparticle shape and size effects on aluminum oxide-induced enhancement of exciton-plasmon coupling and quantum dot emission

    SciTech Connect (OSTI)

    Wing, Waylin J.; Sadeghi, Seyed M. Gutha, Rithvik R.; Campbell, Quinn; Mao, Chuanbin

    2015-09-28

    We investigate the shape and size effects of gold metallic nanoparticles on the enhancement of exciton-plasmon coupling and emission of semiconductor quantum dots induced via the simultaneous impact of metal-oxide and plasmonic effects. This enhancement occurs when metallic nanoparticle arrays are separated from the quantum dots by a layered thin film consisting of a high index dielectric material (silicon) and aluminum oxide. Our results show that adding the aluminum oxide layer can increase the degree of polarization of quantum dot emission induced by metallic nanorods by nearly two times, when these nanorods have large aspect ratios. We show when the aspect ratio of these nanorods is reduced to half, the aluminum oxide loses its impact, leading to no improvement in the degree of polarization. These results suggest that a silicon/aluminum oxide layer can significantly enhance exciton-plasmon coupling when quantum dots are in the vicinity of metallic nanoantennas with high aspect ratios.

  18. The role of transport processes of nonequilibrium charge carriers in radiative properties of arrays of InAs/GaAs quantum dots

    SciTech Connect (OSTI)

    Shkolnik, A. S. Savelyev, A. V.; Karachinsky, L. Ya.; Gordeev, N. Yu.; Seisyan, R. P.; Zegrya, G. G.; Pellegrini, S.; Buller, G. S.; Evtikhiev, V. P.

    2008-03-15

    The results of time-resolved photoluminescence studies of heterostructures containing monolayer arrays of InAs/GaAs quantum dots are presented. A two-component time dependence of intensity of photoluminescence from the ground state of quantum dots, with characteristic times of the slow component up to hundreds of nanoseconds and those of rapid one several nanoseconds, is studied. It is shown that the slow component is determined by the transport of nonequilibrium charge carriers between the quantum dots. At low temperatures, the time of the slow component is determined by tunneling, and at high temperatures by thermal escape of nonequilibrium charge carriers. The ratio of the contributions of tunneling and thermal escape is determined by the degree of isolation of quantum dots. A theoretical model is constructed that describes the effect of the dynamics of carrier transport on the emergence and decay of the slow component of photoluminescence.

  19. Anomalously Large Polarization Effect Responsible for Excitonic Red Shifts in PbSe Quantum Dot Solids

    SciTech Connect (OSTI)

    A Wolcott; V Doyeux; C Nelson; R Gearba; K Lei; K Yager; A dolocan; K Williams; D Nguyen; X Zhu

    2011-12-31

    The formation of solid thin films from colloidal semiconductor quantum dots (QDs) is often accompanied by red shifts in excitonic transitions, but the mechanisms responsible for the red shifts are under debate. We quantitatively address this issue using optical absorption spectroscopy of two-dimensional (2D) and three-dimensional (3D) arrays of PbSe QDs with controlled inter-QD distance, which was determined by the length of alkanedithiol linking molecules. With decreasing inter-QD distance, the first and second exciton absorption peaks show increasing red shifts. Using thin films consisting of large and isolated QDs embedded in a matrix of small QDs, we determine that a dominant contribution to the observed red shift is due to changes in polarization of the dielectric environment surrounding each QD ({approx}88%), while electronic or transition dipole coupling plays a lesser role. However, the observed red shifts are more than 1 order of magnitude larger than theoretical predictions based on the dielectric polarization effect for spherical QDs. We attribute this anomalously large polarization effect to deviations of the exciton wave functions from eigenfunctions of the idealized spherical quantum well model.

  20. Electronic and optical properties of single excitons and biexcitons in type-II quantum dot nanocrystals

    SciTech Connect (OSTI)

    Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2014-05-21

    In this study, a detailed investigation of the electronic and optical properties (i.e., binding energies, absorption wavelength, overlap of the electron-hole wave functions, recombination oscillator strength, etc.) of an exciton and a biexciton in CdTe/CdSe core/shell type-II quantum dot heterostructures has been carried out in the frame of the single band effective mass approximation. In order to determine the electronic properties, we have self-consistently solved the Poisson-Schrdinger equations in the Hartree approximation. We have considered all probable Coulomb interaction effects on both energy levels and also on the corresponding wave functions for both single exciton and biexciton. In addition, we have taken into account the quantum mechanical exchange-correlation effects in the local density approximation between same kinds of particles for biexciton. Also, we have examined the effect of the ligands and dielectric mismatch on the electronic and optical properties. We have used a different approximation proposed by Sahin and Koc [Appl. Phys. Lett. 102, 183103 (2013)] for the recombination oscillator strength of the biexciton for bound and unbound cases. The results obtained have been presented comparatively as a function of the shell thicknesses and probable physical reasons in behind of the results have been discussed in a detail.

  1. Proposal for efficient mode converter based on cavity quantum electrodynamics dark mode in a semiconductor quantum dot coupled to a bimodal microcavity

    SciTech Connect (OSTI)

    Li, Jiahua; Yu, Rong; Ma, Jinyong; Wu, Ying

    2014-10-28

    The ability to engineer and convert photons between different modes in a solid-state approach has extensive technological implications not only for classical communication systems but also for future quantum networks. In this paper, we put forward a scheme for coherent mode conversion of optical photons by utilizing the intermediate coupling between a single quantum dot and a bimodal photonic crystal microcavity via a waveguide. Here, one mode of the photonic crystal microcavity is coherently driven by an external single-frequency continuous-wave laser field and the two cavity modes are not coupled to each other due to their orthogonal polarizations. The undriven cavity mode is thus not directly coupled to the input driving laser and the only way it can get light is via the quantum dot. The influences of the system parameters on the photon-conversion efficiency are analyzed in detail in the limit of weak probe field and it is found that high photon-conversion efficiency can be achieved under appropriate conditions. It is shown that the cavity dark mode, which is a superposition of the two optical modes and is decoupled from the quantum dot, can appear in such a hybrid optical system. We discuss the properties of the dark mode and indicate that the formation of the dark mode enables the efficient transfer of optical fields between the two cavity modes.

  2. Low-density InP-based quantum dots emitting around the 1.5??m telecom wavelength range

    SciTech Connect (OSTI)

    Yacob, M.; Reithmaier, J. P.; Benyoucef, M.

    2014-01-13

    The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy. Clearly spatially separated QDs with a dot density of about 5??10{sup 8} cm{sup ?2} are obtained by using a special capping technique after the dot formation process. High-resolution micro-photoluminescence performed on optimized QD structures grown on distributed Bragg reflector exhibits single QD emissions around 1.5??m with narrow excitonic linewidth below 50??eV, which can be used as single photon source in the telecom wavelength range.

  3. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  4. Ordering mechanism of stacked CdSe/ZnS{sub x}Se{sub 1-x} quantum dots: A combined reciprocal-space and real-space approach

    SciTech Connect (OSTI)

    Schmidt, Th.; Roventa, E.; Clausen, T.; Flege, J. I.; Alexe, G.; Rosenauer, A.; Hommel, D.; Falta, J.; Bernstorff, S.; Kuebel, C.

    2005-11-15

    The vertical and lateral ordering of stacked CdSe quantum dot layers embedded in ZnS{sub x}Se{sub 1-x} has been investigated by means of grazing incidence small angle x-ray scattering and transmission electron microscopy. Different growth parameters have been varied in order to elucidate the mechanisms leading to quantum dot correlation. From the results obtained for different numbers of quantum dot layers, we conclude on a self-organized process which leads to increasing ordering for progressive stacking. The dependence on the spacer layer thickness indicates that strain induced by lattice mismatch drives the ordering process, which starts to break down for too thick spacer layers in a thickness range from 45 to 80 A. Typical quantum dot distances in a range from about 110 to 160 A have been found. A pronounced anisotropy of the quantum dot correlation has been observed, with the strongest ordering along the [110] direction. Since an increased ordering is found with increasing growth temperature, the formation of stacking faults as an additional mechanism for quantum dot alignment can be ruled out.

  5. Photophysics of (CdSe)ZnS Colloidal Quantum Dots in an Aqueous Environment Stabilized with Amino Acids and Genetically-Modified Proteins

    SciTech Connect (OSTI)

    Ai, X.; Xu, Q.; Jones, M.; Song, Q.; Ding, S.-Y.; Ellingson, R. J.; Himmel, M.; Rumbles, G.

    2007-01-01

    Using a combination of two amino acids, histidine and N-acetyl-cysteine, to replace the original organic capping groups of (CdSe)ZnS quantum dots, water-soluble and highly luminescent (CdSe)ZnS quantum dots have been successfully prepared at pH 8. Characterization by steady-state and time-resolved photoluminescence spectroscopy, and transient absorption spectroscopy, demonstrate that the electronic properties of these quantum dots exceed those of the original as-synthesized samples dissolved in a more-conventional organic solvent. Furthermore, these amino acid-stabilized quantum dots have been assembled onto a cellulose substrate via cellulose binding proteins that specifically bind to cellulose and was genetically engineered to harbor dual hexahistidine tags at the N- and C-termini to confer binding with the zinc(II) on the quantum dot surface. The spectroscopic measurements show that the protein-bound quantum dots continue to retain their desirable electronic properties when bound on the substrate. Meanwhile, the specific and very selective binding properties of the proteins have remained effective. (1)Select optimal greenhouse gas (GHG) and petroleum reduction strategies for each fleet location, (2)Meet or exceed Federal fleet GHG and petroleum reduction requirements outlined in the Guidance, (3)Acquire vehicles to support these strategies while minimizing fleet size and vehicle miles traveled (VMT), (4)Refine strategies based on agency performance.

  6. Metamorphic approach to single quantum dot emission at 1.55 {mu}m on GaAs substrate

    SciTech Connect (OSTI)

    Semenova, E. S.; Hostein, R.; Patriarche, G.; Mauguin, O.; Largeau, L.; Robert-Philip, I.; Beveratos, A.; Lemaitre, A.

    2008-05-15

    We report on the fabrication and the characterization of InAs quantum dots (QDs) embedded in an indium rich In{sub 0.42}Ga{sub 0.58}As metamorphic matrix grown on a GaAs substrate. Growth conditions were chosen so as to minimize the number of threading dislocations and other defects produced during the plastic relaxation. Sharp and bright lines, originating from the emission of a few isolated single quantum dots, were observed in microphotoluminescence around 1.55 {mu}m at 5 K. They exhibit, in particular, a characteristic exciton/biexciton behavior. These QDs could offer an interesting alternative to other approaches as InAs/InP QDs for the realization of single photon emitters at telecom wavelengths.

  7. Pseudopotential calculations of electron and hole addition spectra of InAs, InP, and Si quantum dots

    SciTech Connect (OSTI)

    Franceschetti, Alberto; Zunger, Alex

    2000-07-15

    The electron and hole addition energies, the quasiparticle gap, and the optical gap of InAs, InP, and Si quantum dots are calculated using microscopic pseudopotential wave functions. The effects of the dielectric mismatch between the quantum dot and the surrounding material are included using a realistic profile for the dielectric constant {epsilon}(r). We find that the addition energies and the quasiparticle gap depend strongly on the dielectric constant of the environment {epsilon}{sub out}, while the optical gap is rather insensitive to {epsilon}{sub out}. We compare our results with recent tunneling spectroscopy measurements for InAs nanocrystals, finding excellent agreement. Our calculations for the addition energies and the quasiparticle gap of InP and Si nanocrystals serve as predictions for future experiments. (c) 2000 The American Physical Society.

  8. Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing

    SciTech Connect (OSTI)

    Nie, D.; Mei, T.; Xu, C. D.; Dong, J. R.

    2006-09-25

    Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600 deg. C for 30 s. The annealing results in a maximum differential band-gap blueshift of 106 nm but a thermal shift of only 10 nm. Band-gap halftones are obtained by controlling the amount of near-surface defects via wet chemical etching on the plasma-exposed InP cap layer. No degradation of quantum-dot crystal quality due to the process has been observed as evidenced by photoluminescence intensity.

  9. Frequency stabilization of the zero-phonon line of a quantum dot via phonon-assisted active feedback

    SciTech Connect (OSTI)

    Hansom, Jack; Schulte, Carsten H. H.; Matthiesen, Clemens; Stanley, Megan J.; Atatre, Mete

    2014-10-27

    We report on the feedback stabilization of the zero-phonon emission frequency of a single InAs quantum dot. The spectral separation of the phonon-assisted component of the resonance fluorescence provides a probe of the detuning between the zero-phonon transition and the resonant driving laser. Using this probe in combination with active feedback, we stabilize the zero-phonon transition frequency against environmental fluctuations. This protocol reduces the zero-phonon fluorescence intensity noise by a factor of 22 by correcting for environmental noise with a bandwidth of 191?Hz, limited by the experimental collection efficiency. The associated sub-Hz fluctuations in the zero-phonon central frequency are reduced by a factor of 7. This technique provides a means of stabilizing the quantum dot emission frequency without requiring access to the zero-phonon emission.

  10. Tunable photoluminescence of self-assembled GeSi quantum dots by B{sup +} implantation and rapid thermal annealing

    SciTech Connect (OSTI)

    Chen, Yulu; Wu, Shan; Ma, Yinjie; Fan, Yongliang; Yang, Xinju; Zhong, Zhenyang; Jiang, Zuimin

    2014-06-21

    The layered GeSi quantum dots (QDs) are grown on (001) Si substrate by molecular beam epitaxy. The photoluminescence (PL) peak of the as-grown GeSi quantum dots has obvious blue shift and enhancement after processed by ion implantation and rapid thermal annealing. It is indicated that the blue shift is originated from the interdiffusion of Ge and Si at the interface between QDs and the surrounding matrix. The dependence of PL intensity on the excitation power shows that there are the nonradiative centers of shallow local energy levels from the point defects caused by the ion implantation, but not removed by the rapid thermal annealing. The tunable blue shift of the PL position from the 1300?nm to 1500?nm region may have significant application value in the optical communication.

  11. Kondo Resonance in a Mesoscopic Ring Coupled to a Quantum Dot: Exact Results for the Aharonov-Bohm-Casher Effects

    SciTech Connect (OSTI)

    Eckle, H.-P.; Johannesson, H.; Stafford, C. A.

    2001-07-02

    We study the persistent currents induced by both the Aharonov-Bohm and Aharonov-Casher effects in a one-dimensional mesoscopic ring coupled to a sidebranch quantum dot at Kondo resonance. For privileged values of the Aharonov-Bohm-Casher fluxes, the problem can be mapped onto an integrable model, exactly solvable by a Bethe ansatz. In the case of a pure magnetic Aharonov-Bohm flux, we find that the presence of the quantum dot has no effect on the persistent current. In contrast, the Kondo resonance interferes with the spin-dependent Aharonov-Casher effect to induce a current which, in the strong-coupling limit, is independent of the number of electrons in the ring.

  12. CdSe self-assembled quantum dots with ZnCdMgSe barriers emitting throughout the visible spectrum

    SciTech Connect (OSTI)

    Perez-Paz, M. Noemi; Zhou Xuecong; Munoz, Martin; Lu Hong; Sohel, Mohammad; Tamargo, Maria C.; Jean-Mary, Fleumingue; Akins, Daniel L.

    2004-12-27

    Self-assembled quantum dots of CdSe with ZnCdMgSe barriers have been grown by molecular beam epitaxy on InP substrates. The optical and microstructural properties were investigated using photoluminescence (PL) and atomic force microscopy (AFM) measurements. Control and reproducibility of the quantum dot (QD) size leading to light emission throughout the entire visible spectrum range has been obtained by varying the CdSe deposition time. Longer CdSe deposition times result in a redshift of the PL peaks as a consequence of an increase of QD size. AFM studies demonstrate the presence of QDs in uncapped structures. A comparison of this QD system with CdSe/ZnSe shows that not only the strain but also the chemical properties of the system play an important role in QD formation.

  13. Coupling quantum dots to optical fiber: Low pump threshold laser in the red with a near top hat beam profile

    SciTech Connect (OSTI)

    Cheng, H.; Mironov, A. E.; Ni, J. H.; Yang, H. J.; Chen, W. W.; Dai, Z.; Park, S.-J.; Eden, J. G.; Dragic, P. D.; Dong, J.

    2015-02-23

    Direct coupling of the optical field in a ?244?nm thick, CdSe/ZnS quantum dot film to an optical fiber has yielded lasing in the red (? ? 644?nm) with a threshold pump energy density?quantum dots deposited onto the exterior surface of a 125??m diameter coreless silica fiber, this free-running oscillator produces 134 nJ in 3.6?ns FWHM pulses which correspond to 37?W of peak power from an estimated gain volume of ?4.5??10{sup ?7}?cm{sup 3}. Lasing was confirmed by narrowing of the output optical radiation in both the spectral and temporal domains, and the laser beam intensity profile approximates a top hat.

  14. Enhancing efficiency and power of quantum-dots resonant tunneling thermoelectrics in three-terminal geometry by cooperative effects

    SciTech Connect (OSTI)

    Jiang, Jian-Hua

    2014-11-21

    We propose a scheme of multilayer thermoelectric engine where one electric current is coupled to two temperature gradients in three-terminal geometry. This is realized by resonant tunneling through quantum dots embedded in two thermal and electrical resisting polymer matrix layers between highly conducting semiconductor layers. There are two thermoelectric effects, one of which is pertaining to inelastic transport processes (if energies of quantum dots in the two layers are different), while the other exists also for elastic transport processes. These two correspond to the transverse and longitudinal thermoelectric effects, respectively, and are associated with different temperature gradients. We show that cooperation between the two thermoelectric effects leads to markedly improved figure of merit and power factor, which is confirmed by numerical calculation using material parameters. Such enhancement is robust against phonon heat conduction and energy level broadening. Therefore, we demonstrated cooperative effect as an additional way to effectively improve performance of thermoelectrics in three-terminal geometry.

  15. Synthesis of cadmium telluride quantum wires and the similarity of their band gaps to those of equidiameter cadmium telluride quantum dots

    SciTech Connect (OSTI)

    Wang, Lin-Wang; Sun, Jianwei; Wang, Lin-Wang; Buhro, William E.

    2008-07-11

    High-quality colloidal CdTe quantum wires having purposefully controlled diameters in the range of 5-11 nm are grown by the solution-liquid-solid (SLS) method, using Bi-nanoparticle catalysts, cadmium octadecylphosphonate and trioctylphosphine telluride as precursors, and a TOPO solvent. The wires adopt the wurtzite structure, and grow along the [002] direction (parallel to the c axis). The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to the experimental results for high-quality CdTe quantum dots. In contrast to the predictions of an effective-mass approximation, particle-in-a-box model, and previous experimental results from CdSe and InP dot-wire comparisons, the band gaps of CdTe dots and wires of like diameter are found to be experimentally indistinguishable. The present results are analyzed using density functional theory under the local-density approximation by implementing a charge-patching method. The higher-level theoretical analysis finds the general existence of a threshold diameter, above which dot and wire band gaps converge. The origin and magnitude of this threshold diameter is discussed.

  16. Lifetime and Polarization of the Radiative Decay of Excitons, Biexcitons, and Trions in CdSe Nanocrystal Quantum Dots

    SciTech Connect (OSTI)

    Califano, M.; Franceschetti, A.; Zunger, A.

    2007-01-01

    Using the pseudopotential configuration-interaction method, we calculate the intrinsic lifetime and polarization of the radiative decay of single excitons (X), positive and negative trions (X{sup +} and X{sup -}), and biexcitons (XX) in CdSe nanocrystal quantum dots. We investigate the effects of the inclusion of increasingly more complex many-body treatments, starting from the single-particle approach and culminating with the configuration-interaction scheme. Our configuration-interaction results for the size dependence of the single-exciton radiative lifetime at room temperature are in excellent agreement with recent experimental data. We also find the following. (i) Whereas the polarization of the bright exciton emission is always perpendicular to the hexagonal c axis, the polarization of the dark exciton switches from perpendicular to parallel to the hexagonal c axis in large dots, in agreement with experiment. (ii) The ratio of the radiative lifetimes of mono- and biexcitons (X):(XX) is {approx}1:1 in large dots (R=19.2 {angstrom}). This ratio increases with decreasing nanocrystal size, approaching 2 in small dots (R=10.3 {angstrom}). (iii) The calculated ratio (X{sup +}):(X{sup -}) between positive and negative trion lifetimes is close to 2 for all dot sizes considered.

  17. Polarization of the interband optical dipole in InAs/GaAs self-organized quantum dots

    SciTech Connect (OSTI)

    Cortez, S.; Krebs, O.; Voisin, P.; Gerard, J. M.

    2001-06-15

    We present measurements of the optical dipole of interband transitions in InAs/GaAs quantum dots. Both the transmission in guided-wave geometry and the in-plane polarization dependence of the photoluminescence are analyzed. The relative oscillator strength and polarization of up to four optical transitions have been determined, and the electronic structure is discussed, with a focus on the heavy-hole versus light-hole character of valence states.

  18. InAs quantum dot growth on Al{sub x}Ga{sub 1?x}As by metalorganic vapor phase epitaxy for intermediate band solar cells

    SciTech Connect (OSTI)

    Jakomin, R.; Kawabata, R. M. S.; Souza, P. L.; Mouro, R. T.; Pires, M. P.; Micha, D. N.

    2014-09-07

    InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1?x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x?=?0.3 and InAs dot vertical dimensions of 5?nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

  19. Charge state control in single InAs/GaAs quantum dots by external electric and magnetic fields

    SciTech Connect (OSTI)

    Tang, Jing; Cao, Shuo; Gao, Yunan; Sun, Yue; Jin, Kuijuan; Xu, Xiulai; Geng, Weidong; Williams, David A.

    2014-07-28

    We report a photoluminescence (PL) spectroscopy study of charge state control in single self-assembled InAs/GaAs quantum dots by applying electric and/or magnetic fields at 4.2?K. Neutral and charged exciton complexes were observed under applied bias voltages from ?0.5?V to 0.5?V by controlling the carrier tunneling. The highly negatively charged exciton emission becomes stronger with increasing pumping power, arising from the fact that electrons have a smaller effective mass than holes and are more easily captured by the quantum dots. The integrated PL intensity of negatively charged excitons is affected significantly by a magnetic field applied along the sample growth axis. This observation is explained by a reduction in the electron drift velocity caused by an applied magnetic field, which increases the probability of non-resonantly excited electrons being trapped by localized potentials at the wetting layer interface, and results in fewer electrons distributed in the quantum dots. The hole drift velocity is also affected by the magnetic field, but it is much weaker.

  20. Enhanced photocatalytic performance of g-C{sub 3}N{sub 4} with BiOCl quantum dots modification

    SciTech Connect (OSTI)

    Zheng, Chun-zhi Zhang, Chun-yong Zhang, Guo-hua Zhao, De-jian Wang, Ya-zhen

    2014-07-01

    Highlights: Novel BiOCl quantum dots modified g-C{sub 3}N{sub 4} photocatalyst was synthesized. BiOCl-g-C{sub 3}N{sub 4} showed much higher photocatalytic activity than pure g-C{sub 3}N{sub 4} and BiOCl. High separation efficiency of photoinduced carriers results in the enhanced performance. - Abstract: Novel BiOCl quantum dots modified g-C{sub 3}N{sub 4} photocatalyst was synthesized by a one-step chemical bath method at low temperature. The photocatalyst was characterized using X-ray diffraction, high-resolution transmission microscopy UVvisible light diffusion reflectance spectrometry, and photoluminescence spectroscopy. The results indicated that BiOCl quantum dots were dispersed on g-C{sub 3}N{sub 4} to form heterojunction structures with high specific surface area. BiOCl-g-C{sub 3}N{sub 4} showed much higher photocatalytic activity than pure g-C{sub 3}N{sub 4} and BiOCl for rhodamine B degradation. The enhanced performance was induced by the high separation efficiency of photoinduced carriers.

  1. CdSe/ZnSe quantum dot with a single Mn{sup 2+} ionA new system for a single spin manipulation

    SciTech Connect (OSTI)

    Smole?ski, T.

    2015-03-21

    We present a magneto-optical study of individual self-assembled CdSe/ZnSe quantum dots doped with single Mn{sup 2+} ions. Properties of the studied dots are analyzed analogously to more explored system of Mn-doped CdTe/ZnTe dots. Characteristic sixfold splitting of the neutral exciton emission line as well as its evolution in the magnetic field are described using a spin Hamiltonian model. Dynamics of both exciton recombination and Mn{sup 2+} spin relaxation are extracted from a series of time-resolved experiments. Presence of a single dopant is shown not to affect the average excitonic lifetime measured for a number of nonmagnetic and Mn-doped dots. On the other hand, non-resonant pumping is demonstrated to depolarize the Mn{sup 2+} spin in a quantum dot placed in external magnetic field. This effect is utilized to determine the ion spin relaxation time in the dark.

  2. Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

    SciTech Connect (OSTI)

    Cohen, Eyal; Yochelis, Shira; Westreich, Ohad; Shusterman, Sergey; Kumah, Divine P.; Clarke, Roy; Yacoby, Yizhak; Paltiel, Yossi

    2011-09-06

    We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy (DHE) technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski-Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar.

  3. Heat generation by electronic current in a quantum dot spin-valve

    SciTech Connect (OSTI)

    Chi, Feng; Sun, Lian-Liang; Guo, Yu

    2014-10-28

    Electric-current-induced heat generation in an interacting single-level quantum dot connected to ferromagnetic leads with noncollinear magnetizations is theoretically investigated. We find that when the two leads' spin polarization rates are identical and much smaller than unit, the magnitude of the heat generation is almost monotonously enhanced as the angle between the leads' magnetic moments is varied from zero to π, while the magnitude of the electric current is continuously suppressed. Moreover, the properties of the heat generation depend on the lead's spin polarization rate in different ways when the angle is varied. If at least one of the leads' spin polarization rate approaches to unit, the spin-valve effect of the heat generation is identical to that of the electric current. Now the previously found negative differential of the heat generation disappears when the angle approaches to π. As compared to the current, the heat generation is more sensitive to the system's asymmetry when one of the electrodes is half-metallic in noncollinear configurations.

  4. Probing Interfacial Electronic States in CdSe Quantum Dots using Second Harmonic Generation Spectroscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Doughty, Benjamin L.; Ma, Yingzhong; Shaw, Robert W

    2015-01-07

    Understanding and rationally controlling the properties of nanomaterial surfaces is a rapidly expanding field of research due to the dramatic role they play on the optical and electronic properties vital to light harvesting, emitting and detection technologies. This information is essential to the continued development of synthetic approaches designed to tailor interfaces for optimal nanomaterial based device performance. In this work, closely spaced electronic excited states in model CdSe quantum dots (QDs) are resolved using second harmonic generation (SHG) spectroscopy, and the corresponding contributions from surface species to these states are assessed. Two distinct spectral features are observed in themore » SHG spectra, which are not readily identified in linear absorption and photoluminescence excitation spectra. These features include a weak band at 395 6 nm, which coincides with transitions to the 2S1/2 1Se state, and a much more pronounced band at 423 4 nm arising from electronic transitions to the 1P3/2 1Pe state. Chemical modification of the QD surfaces through oxidation resulted in disappearance of the SHG band corresponding to the 1P3/2 1Pe state, indicating prominent surface contributions. Signatures of deep trap states localized on the surfaces of the QDs are also observed. We further find that the SHG signal intensities depend strongly on the electronic states being probed and their relative surface contributions, thereby offering additional insight into the surface specificity of SHG signals from QDs.« less

  5. Group-V intermixing in InAs/InP quantum dots

    SciTech Connect (OSTI)

    Chia, C.K.; Chua, S.J.; Tripathy, S.; Dong, J.R.

    2005-01-31

    Postgrowth intermixing in InAs/InP quantum dot (QD) structures have been investigated by rapid thermal annealing and laser irradiation techniques. In both cases, room-temperature photoluminescence (PL) measured from the QD structures after intermixing shows a substantial blueshift accompanied by an improvement in PL intensity and a reduction in linewidth. In the case of impurity free vacancy disordering, an energy shift of up to 350 meV has been achieved. The maximum differential energy shift for samples capped with SiO{sub 2} and SiN{sub x} dielectrics was found to be 90 meV. On the other hand, laser-induced intermixing allows differential energy shifts of more than 250 meV in this material system. Micro-Raman measurement shows the appearance of InAs-type and InP-type optical phonon peaks from laser-annealed InAs/InP QDs due to the exchange of As and P at the QD interfaces.

  6. Cytotoxicity of InP/ZnS quantum dots related to reactive oxygen species generation.

    SciTech Connect (OSTI)

    Chibli, H.; Carlini, L.; Park, S.; Dimitrijevic, N. M.; Nadeau, J. L.

    2011-01-01

    Indium phosphide (InP) quantum dots (QDs) have emerged as a presumably less hazardous alternative to cadmium-based particles, but their cytotoxicity has not been well examined. Although their constituent elements are of very low toxicity to cells in culture, they nonetheless exhibit phototoxicity related to generation of reactive oxygen species by excited electrons and/or holes interacting with water and molecular oxygen. Using spin-trap electron paramagnetic resonance (EPR) spectroscopy and reporter assays, we find a considerable amount of superoxide and a small amount of hydroxyl radical formed under visible illumination of biocompatible InP QDs with a single ZnS shell, comparable to what is seen with CdTe. A double thickness shell reduces the reactive oxygen species concentration approximately two-fold. Survival assays in five cell lines correspondingly indicate a distinct reduction in toxicity with the double-shell InP QDs. Toxicity varies significantly across cell lines according to the efficiency of uptake, being overall significantly less than what is seen with CdTe or CdSe/ZnS. This indicates that InP QDs are a useful alternative to cadmium-containing QDs, while remaining capable of electron-transfer processes that may be undesirable or which may be exploited for photosensitization applications.

  7. Microwave-driven coherent operation of a semiconductor quantum dot charge qubit

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, Dohun; Ward, D. R.; Simmons, C. B.; Gamble, John King; Blume-Kohout, Robin; Nielsen, Erik; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; et al

    2015-02-16

    An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. The qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. But, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the ‘sweet spot’. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving wemore » achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X–Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Moreover, both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.« less

  8. High-performance deep ultraviolet photodetectors based on ZnO quantum dot assemblies

    SciTech Connect (OSTI)

    Xu, Xiaoyong; Xu, Chunxiang E-mail: jghu@yzu.edu.cn; Hu, Jingguo E-mail: jghu@yzu.edu.cn

    2014-09-14

    A high-performance ZnO quantum dots (QDs)-based ultraviolet (UV) photodetector has been successfully fabricated via the self-assembly of QDs on the Au interdigital electrode. The broadened band gap in ZnO QDs makes the device has the highly selective response for the deep UV detection. The unique QD-QD junction barriers similar to back-to-back Schottky barriers dominate the conductance of the QD network and the UV light-induced barrier-height modulation plays a crucial role in enhancing the photoresponsivity and the response speed. Typically, the as-fabricated device exhibits the fast response and recovery times of within 1 s, the deep UV selectivity of less than 340 nm, and the stable repeatability with on/off current ratio over 10, photoresponsivity of 5.0410A/W, and photocurrent gain of 1.910, demonstrating that the ZnO QD network is a superior building block for deep UV photodetectors.

  9. Integrated semiconductor quantum dot scintillation detector: Ultimate limit for speed and light yield

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Oktyabrsky, Serge; Yakimov, Michael; Tokranov, Vadim; Murat, Pavel

    2016-03-30

    Here, a picosecond-range timing of charged particles and photons is a long-standing challenge for many high-energy physics, biophysics, medical and security applications. We present a design, technological pathway and challenges, and some properties important for realization of an ultrafast high-efficient room-temperature semiconductor scintillator based on self-assembled InAs quantum dots (QD) embedded in a GaAs matrix. Low QD density (<; 1015 cm-3), fast (~5 ps) electron capture, luminescence peak redshifted by 0.2-0.3 eV from GaAs absorption edge with fast decay time (0.5-1 ns) along with the efficient energy transfer in the GaAs matrix (4.2 eV/pair) allows for fabrication of a semiconductormore » scintillator with the unsurpassed performance parameters. The major technological challenge is fabrication of a large volume (> 1 cm3 ) of epitaxial QD medium. This requires multiple film separation and bonding, likely using separate epitaxial films as waveguides for improved light coupling. Compared to traditional inorganic scintillators, the semiconductor-QD based scintillators could have about 5x higher light yield and 20x faster decay time, opening a way to gamma detectors with the energy resolution better than 1% and sustaining counting rates MHz. Picosecond-scale timing requires segmented low-capacitance photodiodes integrated with the scintillator. For photons, the proposed detector inherently provides the depth-of-interaction information.« less

  10. Quantitative Imaging and In Situ Concentration Measurements of Quantum Dot Nanomaterials in Variably Saturated Porous Media

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Uyuşur, Burcu; Snee, Preston T.; Li, Chunyan; Darnault, Christophe J. G.

    2016-01-01

    Knowledge of the fate and transport of nanoparticles in the subsurface environment is limited, as techniques to monitor and visualize the transport and distribution of nanoparticles in porous media and measure their in situ concentrations are lacking. To address these issues, we have developed a light transmission and fluorescence method to visualize and measure in situ concentrations of quantum dot (QD) nanoparticles in variably saturated environments. Calibration cells filled with sand as porous medium and various known water saturation levels and QD concentrations were prepared. By measuring the intensity of the light transmitted through porous media exposed to fluorescent lightmore » and by measuring the hue of the light emitted by the QDs under UV light exposure, we obtained simultaneously in situ measurements of water saturation and QD nanoparticle concentrations with high spatial and temporal resolutions. Water saturation was directly proportional to the light intensity. A linear relationship was observed between hue-intensity ratio values and QD concentrations for constant water saturation levels. The advantages and limitations of the light transmission and fluorescence method as well as its implications for visualizing and measuring in situ concentrations of QDs nanoparticles in the subsurface environment are discussed.« less

  11. Layered insulator hexagonal boron nitride for surface passivation in quantum dot solar cell

    SciTech Connect (OSTI)

    Shanmugam, Mariyappan; Jain, Nikhil; Jacobs-Gedrim, Robin; Yu, Bin; Xu, Yang

    2013-12-09

    Single crystalline, two dimensional (2D) layered insulator hexagonal boron nitride (h-BN), is demonstrated as an emerging material candidate for surface passivation on mesoporous TiO{sub 2}. Cadmium selenide (CdSe) quantum dot based bulk heterojunction (BHJ) solar cell employed h-BN passivated TiO{sub 2} as an electron acceptor exhibits photoconversion efficiency ?46% more than BHJ employed unpassivated TiO{sub 2}. Dominant interfacial recombination pathways such as electron capture by TiO{sub 2} surface states and recombination with hole at valence band of CdSe are efficiently controlled by h-BN enabled surface passivation, leading to improved photovoltaic performance. Highly crystalline, confirmed by transmission electron microscopy, dangling bond-free 2D layered h-BN with self-terminated atomic planes, achieved by chemical exfoliation, enables efficient passivation on TiO{sub 2}, allowing electronic transport at TiO{sub 2}/h-BN/CdSe interface with much lower recombination rate compared to an unpassivated TiO{sub 2}/CdSe interface.

  12. Switchable photoconductivity of quantum dot films using cross-linking ligands with light-sensitive structures.

    SciTech Connect (OSTI)

    Lilly, G. Daniel; Whalley, Adam C.; Grunder, Sergio; Valente, Cory; Frederick, Matthew T.; Stoddart, J. Fraser; Weiss, Emily A.

    2011-01-01

    This paper describes the use of a diarylethylene (DAE) ligand, which adopts structures that are sensitive to the wavelength of light, to cross-link films of CdSe quantum dots (QDs) within electrical junctions with photoswitchable conductivity. These QD-DAE films are deposited on indium-tin-oxide/poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (ITO/PEDOT:PSS) electrodes and have eutectic Ga-In top-contacts. The photocurrent density of the cross-linked QD films is enhanced by a factor of 6.5 (averaged over all applied voltages) when the DAE ligand is switched from its open, non-conductive form (by illumination with 500650 nm light) to its closed, conductive form (by illumination with 300400 nm light). This enhancement is accomplished by changing the inter-particle electronic coupling, not the inter-particle distance. Identical QD films cross-linked with dibenzenedithiol ligands have a photoconductivity that is insensitive to the wavelength of light.

  13. Examining Forster Energy Transfer for Semiconductor Nanocrystaline Quantum Dot Donors and Acceptors

    SciTech Connect (OSTI)

    Curutchet, C.; Franceschetti, A.; Zunger, A.; Scholes, G. D.

    2008-01-01

    Excitation energy transfer involving semiconductor quantum dots (QDs) has received increased attention in recent years because their properties, such as high photostability and size-tunable optical properties, have made QDs attractive as Forster resonant energy transfer (FRET) probes or sensors. An intriguing question in FRET studies involving QDs has been whether the dipole approximation, commonly used to predict the electronic coupling, is sufficiently accurate. Accurate estimates of electronic couplings between two 3.9 nm CdSe QDs and between a QD and a chlorophyll molecule are reported. These calculations are based on transition densities obtained from atomistic semiempirical calculations and time-dependent density functional theory for the QD and the chlorophyll, respectively. In contrast to the case of donor-acceptor molecules, where the dipole approximation breaks down at length scales comparable to the molecular dimensions, we find that the dipole approximation works surprisingly well when donor and/or acceptor is a spherical QD, even at contact donor-acceptor separations. Our conclusions provide support for the use of QDs as FRET probes for accurate distance measurements.

  14. Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

    SciTech Connect (OSTI)

    Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M., E-mail: zmjiang@fudan.edu.cn [State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433 (China); Chen, D. D.; Xu, F. [SHU-SolarE R and D Lab, Department of Physics, College of Science, Shanghai University, Shanghai 200444 (China)

    2014-07-14

    Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488?nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325?nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

  15. Ordering ferromagnetic In{sub 1?x}Mn{sub x}As quantum dots

    SciTech Connect (OSTI)

    Ferri, Fabio A.; Marega Jr, Euclydes; Kunets, Vasyl P.; Salamo, Gregory J.

    2013-12-04

    In this work, we present a method to order low temperature (LT) self-assembled ferromagnetic In{sub 1?x}Mn{sub x}As quantum dots (QDs) grown by molecular beam epitaxy (MBE). The ordered In{sub 1?x}Mn{sub x}As QDs were grown on top of a non-magnetic In{sub 0.4}Ga{sub 0.6}As/GaAs(100) QDs multi-layered structure. The modulation of the chemical potential, due to the stacking, provides a nucleation center for the LT In{sub 1?x}Mn{sub x}As QDs. For particular conditions, such as surface morphology and growth conditions, the In{sub 1?x}Mn{sub x}As QDs align along lines like chains. For comparison purposes, we also report the study of QDs grown on plain GaAs(100) substrates. Ferromagnetic behavior was observed for all structures at 2 K.

  16. Hybrid quantum dot-tin disulfide field-effect transistors with improved photocurrent and spectral responsivity

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cotlet, Mircea; Huang, Yuan Zang; Chen, Jia -Shiang; Huidong Zang; Sutter, Eli A.; Sutter, Peter W.; Nam, Chang -Yong

    2016-03-24

    We report an improved photosensitivity in few-layer tin disulfide (SnS2) field-effect transistors(FETs) following doping with CdSe/ZnS core/shell quantum dots(QDs). The hybrid QD-SnS2 FET devices achieve more than 500% increase in the photocurrent response compared with the starting SnS2-only FET device and a spectral responsivity reaching over 650 A/W at 400 nm wavelength. The negligible electrical conductance in a control QD-only FET device suggests that the energy transfer between QDs and SnS2 is the main mechanism responsible for the sensitization effect, which is consistent with the strong spectral overlap between QDphotoluminescence and SnS2 optical absorption as well as the large nominalmore » donor-acceptor interspacing between QD core and SnS2. Furthermore, we also find enhanced charge carrier mobility in hybrid QD-SnS2 FETs which we attribute to a reduced contact Schottky barrier width due to an elevated background charge carrier density.« less

  17. Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    SciTech Connect (OSTI)

    Lu, Q.; Zhuang, Q.; Hayton, J.; Yin, M.; Krier, A.

    2014-07-21

    There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1??m have been demonstrated and characterized. The gain was determined to be 2.9?cm{sup ?1} per QD layer, and the waveguide loss was ?15?cm{sup ?1} at 4?K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T{sub 0}?=?101?K below 50?K, but decreased to 48?K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs{sub 0.61}Sb{sub 0.13}P{sub 0.26} lower cladding layer and an upper n{sup +} InAs plasmon cladding layer which resulted in a maximum operating temperature (T{sub max}) of 120?K in pulsed mode, which is the highest reported to date.

  18. Microwave-driven coherent operation of a semiconductor quantum dot charge qubit

    SciTech Connect (OSTI)

    Kim, Dohun; Ward, D. R.; Simmons, C. B.; Gamble, John King; Blume-Kohout, Robin; Nielsen, Erik; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.

    2015-02-16

    An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. The qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. But, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the ‘sweet spot’. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving we achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X–Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Moreover, both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.

  19. Improvement of the quality of graphene-capped InAs/GaAs quantum dots

    SciTech Connect (OSTI)

    Othmen, Riadh Rezgui, Kamel; Ajlani, Hosni; Oueslati, Meherzi; Cavanna, Antonella; Madouri, Ali

    2014-06-07

    In this paper, we study the transfer of graphene onto InAs/GaAs quantum dots (QDs). The graphene is first grown on Cu foils by chemical vapor deposition and then polymer Polymethyl Methacrylate (PMMA) is deposited on the top of graphene/Cu. High quality graphene sheet has been obtained by lowering the dissolving rate of PMMA using vapor processing. Uncapped as well as capped graphene InAs/GaAs QDs have been studied using optical microscopy, scanning electron microscopy, and Raman spectroscopy. We gather from this that the average shifts ?? of QDs Raman peaks are reduced compared to those previously observed in graphene and GaAs capped QDs. The encapsulation by graphene makes the indium atomic concentration intact in the QDs by the reduction of the strain effect of graphene on QDs and the migration of In atoms towards the surface. This gives us a new hetero-structure grapheneInAs/GaAs QDs wherein the graphene plays a key role as a cap layer.

  20. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3??m

    SciTech Connect (OSTI)

    Goldmann, Elias Jahnke, Frank; Paul, Matthias; Kettler, Jan; Jetter, Michael; Michler, Peter; Krause, Florian F.; Mller, Knut; Mehrtens, Thorsten; Rosenauer, Andreas

    2014-10-13

    A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3??m under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 2040?nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1?nm and 5?nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.

  1. Non-toxic silver iodide (AgI) quantum dots sensitized solar cells

    SciTech Connect (OSTI)

    Moosakhani, S.; Sabbagh Alvani, A.A.; Sarabi, A.A.; Sameie, H.; Salimi, R.; Kiani, S.; Ebrahimi, Y.

    2014-12-15

    Highlights: • We have demonstrated AgI sensitized solar cell for the first time. • Obtained mesoporous titania powders possessed small crystallite size, high purity and surface area, and developed mesopores with a narrow pore size distribution. • Photovoltaic measurements revealed the electron injection from AgI to TiO{sub 2}. • The assembled AgI-QD solar cells yielded a power conversion efficiency of 0.64% under one sun illumination. • AgI may be a suitable candidate material for use as a non-toxic sensitizer in QDSSC. - Abstract: The present study reports the performance of a new photosensitizer -AgI quantum dots (QDs)- and mesoporous titania (TiO{sub 2}) nanocrystals synthesized by sol–gel (SG) method for solar cells. Furthermore, the effects of n-heptane on the textural properties of TiO{sub 2} nanocrystals were comprehensively investigated by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), N{sub 2} adsorption–desorption measurements, and UV–vis spectroscopy. TiO{sub 2} powders exhibited an anatase-type mesoporous structure with a high surface area of 89.7 m{sup 2}/g. Afterwards, the QDs were grown on mesoporous TiO{sub 2} surface to fabricate a TiO{sub 2}/AgI electrode by a successive ionic layer adsorption and reaction (SILAR) deposition route. Current–voltage characteristics and electrochemical impedance spectroscopy (EIS) data demonstrated that the injection of photoexcited electrons from AgI QDs into the TiO{sub 2} matrix produces photocurrents. The assembled AgI-QD solar cells yielded a power conversion efficiency of 0.64% and a short-circuit current of 2.13 mA/cm{sup 2} under one sun illumination.

  2. Bio-distribution and metabolic paths of silica coated CdSeS quantum dots

    SciTech Connect (OSTI)

    Chen Zhen; Chen Hu; Meng Huan; Xing Gengmei Gao Xueyun; Sun Baoyun; Shi Xiaoli; Yuan Hui; Zhang Chengcheng; Liu Ru; Zhao Feng

    2008-08-01

    With the rapid development of quantum dot (QD) technology, water-soluble QDs have the prospect of being used as a biological probe for specific diagnoses, but their biological behaviors in vivo are little known. Our recent in vivo studies concentrated on the bio-kinetics of QDs coated by hydroxyl group modified silica networks (the QDs are 21.3 {+-} 2.0 nm in diameter and have maximal emission at 570 nm). Male ICR mice were intravenously given the water-soluble QDs with a single dose of 5 nmol/mouse. Inductively coupled plasma-mass spectrometry was used to measure the {sup 111}Cd content to indicate the concentration of QDs in plasma, organs, and excretion samples collected at predetermined time intervals. Meanwhile, the distribution and aggregation state of QDs in tissues were also investigated by pathological examination and differential centrifugation. The plasma half-life and clearance of QDs were 19.8 {+-} 3.2 h and 57.3 {+-} 9.2 ml/h/kg, respectively. The liver and kidney were the main target organs for QDs. The QDs metabolized in three paths depending on their distinct aggregated states in vivo. A fraction of free QDs, maintaining their original form, could be filtered by glomerular capillaries and excreted via urine as small molecules within five days. Most QDs bound to protein and aggregated into larger particles that were metabolized in the liver and excreted via feces in vivo. After five days, 8.6% of the injected dose of aggregated QDs still remained in hepatic tissue and it was difficult for this fraction to clear.

  3. Ligand-induced dependence of charge transfer in nanotube–quantum dot heterostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Lei; Han, Jinkyu; Sundahl, Bryan; Thornton, Scott; Zhu, Yuqi; Zhou, Ruiping; Jaye, Cherno; Liu, Haiqing; Li, Zhuo-Qun; Taylor, Gordon T.; et al

    2016-07-01

    As a model system to probe ligand-dependent charge transfer in complex composite heterostructures, we fabricated double-walled carbon nanotube (DWNT) – CdSe quantum dot (QD) composites. Whereas the average diameter of the QDs probed was kept fixed at ~4.1 nm and the nanotubes analyzed were similarly oxidatively processed, by contrast, the ligands used to mediate the covalent attachment between the QDs and DWNTs were systematically varied to include p-phenylenediamine (PPD), 2-aminoethanethiol (AET), and 4-aminothiophenol (ATP). Herein, we have put forth a unique compilation of complementary data from experiment and theory, including results from transmission electron microscopy (TEM), near-edge X-ray absorption finemore » structure (NEXAFS) spectroscopy, Raman spectroscopy, electrical transport measurements, and theoretical modeling studies, in order to fundamentally assess the nature of the charge transfer between CdSe QDs and DWNTs, as a function of the structure of various, intervening bridging ligand molecules. Specifically, we correlated evidence of charge transfer as manifested by changes and shifts associated with NEXAFS intensities, Raman peak positions, and threshold voltages both before and after CdSe QD deposition onto the underlying DWNT surface. Importantly, for the first time ever in these types of nanoscale composite systems, we have sought to use theoretical modeling to justify and account for our experimental results. Finally, our overall data suggest that (i) QD coverage density on the DWNTs varies, based upon the different ligand pendant groups used and that (ii) the presence of a π-conjugated carbon framework within the ligands themselves and the electron affinity of the pendant groups collectively play important roles in the resulting charge transfer from QDs to the underlying CNTs.« less

  4. Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning

    SciTech Connect (OSTI)

    Petz, C. W.; Floro, J. A.; Yang, D.; Levy, J.

    2012-04-02

    Artificially ordered quantum dot (QD) arrays, where confined carriers can interact via direct exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in ultra-high vacuum (UHV), forming ordered arrays of nanoscale SiC precipitates that have been suggested to template subsequent epitaxial Ge growth to form ordered QD arrays. We show that 3C-SiC nanodots form, in cube-on-cube epitaxial registry with the Si substrate. The SiC nanodots are fully relaxed by misfit dislocations and exhibit small lattice rotations with respect to the substrate. Ge overgrowth at elevated deposition temperatures, followed by Si capping, results in expulsion of the Ge from SiC template sites due to the large chemical and lattice mismatch between Ge and C. Maintaining an epitaxial, low-defectivity Si matrix around the quantum dots is important for creating reproducible electronic and spintronic coupling of states localized at the QDs.

  5. Flowing versus Static Conditions for Measuring Multiple Exciton Generation in PbSe Quantum Dots

    SciTech Connect (OSTI)

    Midgett, Aaron G. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States); Hillhouse, Hugh W. [Univ. of Washington, Seattle, WA (United States); Hughes, Barbara K. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States); Nozik, Arthur J. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States); Beard, Matthew C. [Univ. of Colorado, Boulder, CO (United States)

    2010-09-22

    Recent reports question the validity of pulsed fs-laser experiments for measuring the photon-to-exciton quantum yields (QYs) that result from multiple exciton generation (MEG). The repetitive nature of these experiments opens up an alternative relaxation pathway that may produce artificially high results. We present transient-absorption (TA) data for 4.6 and 6.6 nm diameter PbSe quantum dots (QDs) at a variety of pump photon energies. The data are collected under laminar flow conditions with volumetric flow rates ranging from 0 to 150 mL/min (resulting in Reynolds numbers up to 460). The results are modeled with a spatially resolved population balance of generation, recombination, convective replacement, and accumulation of long-lived excited QDs. By comparing the simulations and experiments, the steady-state population of the long-lived QD-excited states and their kinetics are determined for different experimental conditions. We also improve upon reported photon-to-exciton QYs for PbSe QDs. We find differences in the observed TA dynamics between flowing and static conditions that depend upon photon fluence, pump photon energy, and quality of the QD surfaces. For excitation energies below 2 Eg, independent of QD size or photon fluence, we observe no flow rate dependence in the TA dynamics. At excitation energies of h? > 3 Eg, we observe differences between static and flowing conditions that are most pronounced for high photon fluences. At 3.7 Eg and for 4.6 nm PbSe QDs we find a QY of 1.2 0.1 and at 4.5 Eg the QY is 1.55 0.05. With 6.6 nm QDs excited at 4.7 Eg we observe no difference between static and flowing conditions and find a QY of 1.61 0.05. We also find that by treating the surface of QDs, we can decrease the charging probability (Pg ? 5 10-5) by a factor of 3-4. The observed variations suggest that different QD samples vary regarding their susceptibility to the creation

  6. Science-based design of stable quantum dots for energy-efficient lighting

    SciTech Connect (OSTI)

    Martin, James E.; Rohwer, Lauren E. S.; van Swol, Frank B.; Zhou, Xiaowang; Lu, Ping

    2015-09-01

    II-VI quantum dots, such as CdSe and CdTe, are attractive as downconversion materials for solid-state lighting, because of their narrow linewidth, tunable emission. However, for these materials to have acceptable quantum yields (QYs) requires that they be coated with a II-VI shell material whose valence band offset serves to confine the hole to the core. Confinement prevents the hole from accessing surface traps that lead to nonradiative decay of the exciton. Examples of such hole-confined core/shell QDs include CdTe/CdSe and CdSe/CdS. Unfortunately, the shell can also cause problems due to lattice mismatch, which ranges from 4-6% for systems of interest. This lattice mismatch can create significant interface energies at the heterojunction and places the core under radial compression and the shell under tangential tension. At elevated temperatures (~240°C) interfacial diffusion can relax these stresses, as can surface reconstruction, which can expose the core, creating hole traps. But such high temperatures favor the hexagonal Wurtzite structure, which has lower QY than the cubic zinc blende structure, which can be synthesized at lower temperatures, ~140°C. In the absence of alloying the core/shell structure can become metastable, or even unstable, if the shell is too thick. This can cause result in an irregular shell or even island growth. But if the shell is too thin thermallyactivated transport of the hole to surface traps can occur. In our LDRD we have developed a fundamental atomistic modeling capability, based on Stillinger-Weber and Bond-Order potentials we developed for the entire II-VI class. These pseudo-potentials have enabled us to conduct large-scale atomistic simulations that have led to the computation of phase diagrams of II-VI QDs. These phase diagrams demonstrate that at elevated temperatures the zinc blende phase of CdTe with CdSe grown on it epitaxially becomes thermodynamically unstable due to alloying. This is accompanied by a loss of hole

  7. Self-assembly and photoluminescence evolution of hydrophilic and hydrophobic quantum dots in sol–gel processes

    SciTech Connect (OSTI)

    Yang, Ping; Matras-Postolek, Katarzyna; Song, Xueling; Zheng, Yan; Liu, Yumeng; Ding, Kun; Nie, Shijie

    2015-10-15

    Graphical abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were assembled into various morphologies including chain, hollow spheres, fibers, and ring structures through sol–gel processes. The PL properties during assembly as investigated. - Highlights: • Highly luminescent quantum dots (QDs) were synthesized from several ligands. • The evolution of PL in self-assembly via sol–gel processes was investigated. • CdTe QDs were assembled into a chain by controlling hydrolysis and condensation reactions. • Hollow spheres, fibers, and ring structures were created via CdSe/ZnS QDs in sol–gel processes. - Abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were synthesized from several ligands to investigate the PL evolution in QD self-assembly via sol–gel processes. After ligand exchange, CdTe QDs were assembled into a chain by controlling the hydrolysis and condensation reaction of 3-mercaptopropyl-trimethoxysilane. The chain was then coated with a SiO{sub 2} shell from tetraethyl orthosilicate (TEOS). Hollow spheres, fibers, and ring structures were created from CdSe/ZnS QDs via various sol–gel processes. CdTe QDs revealed red-shifted and narrowed PL spectrum after assembly compared with their initial one. In contrast, the red-shift of PL spectra of CdSe/ZnS QDs is small. By optimizing experimental conditions, SiO{sub 2} spheres with multiple CdSe/ZnS QDs were fabricated using TEOS and MPS. The QDs in these SiO{sub 2} spheres retained their initial PL properties. This result is useful for application because of their high stability and high PL efficiency of 33%.

  8. Electro-optical and dielectric properties of CdSe quantum dots and 6CHBT liquid crystals composites

    SciTech Connect (OSTI)

    Singh, U. B.; Pandey, M. B.; Dhar, R; Pandey, A. S.; Kumar, S.; Dabrowski, R.

    2014-11-15

    We have prepared the composites of a room temperature nematic liquid crystal namely 4-(trans-4-n-hexylcyclohexyl) isothiocyanatobenzoate (6CHBT) and Cadmium Selenide Quantum Dots (CdSe-QDs) and investigated their electro-optical and dielectric properties. Effect of dispersion of CdSe-QDs on various electro-optical and display parameters of host liquid crystalline material have been studied. Physical parameters, such as switching threshold voltage and splay elastic constant have been altered drastically for composites. Dispersion of QDs in a liquid crystals medium destabilizes nematic ordering of the host and decreases the nematic-to-isotropic transition temperature.

  9. Hyperfine-induced hysteretic funnel structure in spin blockaded tunneling current of coupled vertical quantum dots at low magnetic field

    SciTech Connect (OSTI)

    Leary, A.; Wicha, A.; Harack, B.; Coish, W. A.; Hilke, M.; Yu, G.; Gupta, J. A.; Payette, C.; Austing, D. G.

    2013-12-04

    We outline the properties of the hyperfine-induced funnel structure observed in the two-electron spin blockade region of a weakly coupled vertical double quantum dot device. Hysteretic steps in the leakage current occur due to dynamic nuclear polarization when either the bias voltage or the magnetic field is swept up and down. When the bias voltage is swept, an intriguing ?3 mT wide cusp near 0 T appears in the down-sweep position, and when the magnetic field is swept, the current at 0 T can be switched from 'low' to 'high' as the bias is increased.

  10. Vanishing current hysteresis under competing nuclear spin pumping processes in a quadruplet spin-blockaded double quantum dot

    SciTech Connect (OSTI)

    Amaha, S.; Hatano, T.; Tarucha, S.; Gupta, J. A.; Austing, D. G.

    2015-04-27

    We investigate nuclear spin pumping with five-electron quadruplet spin states in a spin-blockaded weakly coupled vertical double quantum dot device. Two types of hysteretic steps in the leakage current are observed on sweeping the magnetic field and are associated with bidirectional polarization of nuclear spin. Properties of the steps are understood in terms of bias-voltage-dependent conditions for the mixing of quadruplet and doublet spin states by the hyperfine interaction. The hysteretic steps vanish when up- and down-nuclear spin pumping processes are in close competition.

  11. Efficient, air-stable colloidal quantum dot solar cells encapsulated using atomic layer deposition of a nanolaminate barrier

    SciTech Connect (OSTI)

    Ip, Alexander H.; Labelle, Andr J.; Sargent, Edward H.

    2013-12-23

    Atomic layer deposition was used to encapsulate colloidal quantum dot solar cells. A nanolaminate layer consisting of alternating alumina and zirconia films provided a robust gas permeation barrier which prevented device performance degradation over a period of multiple weeks. Unencapsulated cells stored in ambient and nitrogen environments demonstrated significant performance losses over the same period. The encapsulated cell also exhibited stable performance under constant simulated solar illumination without filtration of harsh ultraviolet photons. This monolithically integrated thin film encapsulation method is promising for roll-to-roll processed high efficiency nanocrystal solar cells.

  12. Self-organized arrays of graphene and few-layer graphene quantum dots in fluorographene matrix: Charge transient spectroscopy

    SciTech Connect (OSTI)

    Antonova, Irina V., E-mail: antonova@isp.nsc.ru [Rzhanov Institute of Semiconductor Physics, SB RAS, Lavrentiev Avenue 13, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Pirogov st. 2, Novosibirsk 630090 (Russian Federation); Nebogatikova, Nadezhda A.; Prinz, Victor Ya. [Rzhanov Institute of Semiconductor Physics, SB RAS, Lavrentiev Avenue 13, Novosibirsk 630090 (Russian Federation)

    2014-05-12

    Arrays of graphene or few-layer graphene quantum dots (QDs) embedded in a partially fluorinated graphene matrix were created by chemical functionalization of layers. Charge transient spectroscopy employed for investigation of obtained QD systems (size 2070 nm) has allowed us to examine the QD energy spectra and the time of carrier emission (or charge relaxation) from QDs as a function of film thickness. It was found that the characteristic time of carrier emission from QDs decreased markedly (by about four orders of magnitude) on increasing the QD thickness from one graphene monolayer to 3 nm. Daylight-assisted measurements also demonstrate a strong decrease of the carrier emission time.

  13. Suppression of dark current through barrier engineer for solution-processed colloidal quantum-dots infrared photodetectors

    SciTech Connect (OSTI)

    Jiang, Zhenyu E-mail: jianxu@engr.psu.edu; Liu, Yan; Mo, Chen; Wang, Li; Atalla, Mahmoud R. M.; Liu, Jie; Kurhade, Kandhar K.; Xu, Jian E-mail: jianxu@engr.psu.edu; Hu, Wenjia; Zhang, Wenjun; You, Guanjun; Zhang, Yu

    2015-08-31

    In an attempt to suppress the dark current, the barrier layer engineer for solution-processed PbSe colloidal quantum-dot (CQD) photodetectors has been investigated in the present study. It was found that the dark current can be significantly suppressed by implementing two types of carrier blocking layers, namely, hole blocking layer and electron blocking layer, sandwiched in between two active PbSe CQD layers. Meanwhile no adverse impact has been observed for the photo current. Our study suggests that this improvement resides on the transport pathway created via carrier recombination at intermediate layer, which provides wide implications for the suppression of dark current for infrared photodetectors.

  14. Raman scattering as a tool for the evaluation of strain in GaN/AlN quantum dots: The effect of capping

    SciTech Connect (OSTI)

    Cros, A.; Cantarero, A.; Garro, N.; Coraux, J.; Daudin, B.

    2007-10-15

    The strain state of GaN/AlN quantum dots grown on 6H-SiC has been investigated as a function of AlN capping thickness by three different techniques. On the one hand, resonant Raman scattering allowed the detection of the A{sub 1}(LO) quasiconfined mode. It was found that its frequency increases with AlN deposition, while its linewidth did not evolve significantly. Available experiments of multiwavelength anomalous diffraction and diffraction anomalous fine structure on the same samples provided the determination of the wurtzite lattice parameters a and c of the quantum dots. A very good agreement is found between resonant Raman scattering and x-ray measurements, especially concerning the in-plane strain state. The results demonstrate the adequacy of Raman scattering, in combination with the deformation potential and biaxial approximations, to determine quantitatively values of strain in GaN quantum dot layers.

  15. Independent dynamic acousto-mechanical and electrostatic control of individual quantum dots in a LiNbO{sub 3}-GaAs hybrid

    SciTech Connect (OSTI)

    Pustiowski, Jens; Müller, Kai; Bichler, Max; Koblmüller, Gregor; Finley, Jonathan J.; Wixforth, Achim; Krenner, Hubert J.

    2015-01-05

    We demonstrate tuning of single quantum dot emission lines by the combined action of the dynamic acoustic field of a radio frequency surface acoustic wave and a static electric field. Both tuning parameters are set all-electrically in a LiNbO{sub 3}-GaAs hybrid device. The surface acoustic wave is excited directly on the strong piezoelectric LiNbO{sub 3} onto which a GaAs-based p-i-n photodiode containing a single layer of quantum dots was epitaxially transferred. We demonstrate dynamic spectral tuning with bandwidths exceeding 3 meV of single quantum dot emission lines due to deformation potential coupling. The center energy of the dynamic spectral oscillation can be independently programmed simply by setting the bias voltage applied to the diode.

  16. Excitonic fine-structure splitting in telecom-wavelength InAs/GaAs quantum dots: Statistical distribution and height-dependence

    SciTech Connect (OSTI)

    Goldmann, Elias Barthel, Stefan; Florian, Matthias; Jahnke, Frank; Schuh, Kolja

    2013-12-09

    The variation of the excitonic fine-structure splitting is studied for semiconductor quantum dots under the influence of a strain-reducing layer, utilized to shift the emission wavelength of the excitonic transition into the telecom-wavelength regime of 1.31.5 ?m. By means of a sp{sup 3}s{sup *}-tight-binding model and configuration interaction, we calculate wavelength shifts and fine-structure splittings for various quantum dot geometries. We find the splittings remaining small and even decreasing with strain-reducing layer composition for quantum dots with large height. Combined with an observed increased emission efficiency, the applicability for generation of entanglement photons is persistent.

  17. Quantitative multiplex detection of biomarkers on a waveguide-based biosensor using quantum dots

    SciTech Connect (OSTI)

    Xie, Hongzhi; Mukundan, Harshini; Martinez, Jennifer S; Swanson, Basil I; Anderson, Aaron S; Grace, Kevin

    2009-01-01

    The quantitative, simultaneous detection of multiple biomarkers with high sensitivity and specificity is critical for biomedical diagnostics, drug discovery and biomarker characterization [Wilson 2006, Tok 2006, Straub 2005, Joos 2002, Jani 2000]. Detection systems relying on optical signal transduction are, in general, advantageous because they are fast, portable, inexpensive, sensitive, and have the potential for multiplex detection of analytes of interest. However, conventional immunoassays for the detection of biomarkers, such as the Enzyme Linked Immunosorbant Assays (ELISAs) are semi-quantitative, time consuming and insensitive. ELISA assays are also limited by high non-specific binding, especially when used with complex biological samples such as serum and urine (REF). Organic fluorophores that are commonly used in such applications lack photostability and possess a narrow Stoke's shift that makes simultaneous detection of multiple fluorophores with a single excitation source difficult, thereby restricting their use in multiplex assays. The above limitations with traditional assay platforms have resulted in the increased use of nanotechnology-based tools and techniques in the fields of medical imaging [ref], targeted drug delivery [Caruthers 2007, Liu 2007], and sensing [ref]. One such area of increasing interest is the use of semiconductor quantum dots (QDs) for biomedical research and diagnostics [Gao and Cui 2004, Voura 2004, Michalet 2005, Chan 2002, Jaiswal 2004, Gao 2005, Medintz 2005, So 2006 2006, Wu 2003]. Compared to organic dyes, QDs provide several advantages for use in immunoassay platforms, including broad absorption bands with high extinction coefficients, narrow and symmetric emission bands with high quantum yields, high photostablility, and a large Stokes shift [Michalet 2005, Gu 2002]. These features prompted the use of QDs as probes in biodetection [Michalet 2005, Medintz 2005]. For example, Jaiswal et al. reported long term multiple color

  18. Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

    SciTech Connect (OSTI)

    Himwas, C.; Songmuang, R.; Le Si Dang; Bleuse, J.; Monroy, E.; Rapenne, L.; Sarigiannidou, E.

    2012-12-10

    We report on the structural and optical properties of AlGaN/AlN quantum dot (QD) superlattices synthesized by plasma-assisted molecular-beam epitaxy. Modifying the composition and geometry of the QDs, the peak emission wavelength can be shifted from 320 nm to 235 nm while keeping the internal quantum efficiency larger than 30%. The efficient carrier confinement is confirmed by the stability of the photoluminescence (PL) intensity and decay time, from low temperature up to 100 K. Above this threshold, the PL intensity decreases and the radiative lifetime increases due to carrier thermalization. We also identified the intraband electronic transition between the ground level of the conduction band and the first excited state confined along the growth axis (s-p{sub z}).

  19. Homogeneous and inhomogeneous sources of optical transition broadening in room temperature CdSe/ZnS nanocrystal quantum dots

    SciTech Connect (OSTI)

    Wolf, M.; Berezovsky, J.

    2014-10-06

    We perform photoluminescence excitation measurements on individual CdSe/ZnS nanocrystal quantum dots (NCQDs) at room temperature to study optical transition energies and broadening. The observed features in the spectra are identified and compared to calculated transition energies using an effective mass model. The observed broadening is attributed to phonon broadening, spectral diffusion, and size and shape inhomogeneity. The former two contribute to the broadening transitions in individual QDs, while the latter contributes to the QD-to-QD variation. We find that phonon broadening is often not the dominant contribution to transition line widths, even at room temperature, and that broadening does not necessarily increase with transition energy. This may be explained by differing magnitude of spectral diffusion for different quantum-confined states.

  20. Intrinsic and extrinsic defects in a family of coal-derived graphene quantum dots

    SciTech Connect (OSTI)

    Singamaneni, Srinivasa Rao E-mail: tour@rice.edu; Tol, Johan van; Ye, Ruquan; Tour, James M. E-mail: tour@rice.edu

    2015-11-23

    In this letter, we report on the high frequency (239.2 and 336 GHz) electron spin resonance (ESR) studies performed on graphene quantum dots (GQDs), prepared through a wet chemistry route from three types of coal: (a) bituminous, (b) anthracite, and (c) coke; and from non-coal derived GQDs. The microwave frequency-, power-, and temperature-dependent ESR spectra coupled with computer-aided simulations reveal four distinct magnetic defect centers. In bituminous- and anthracite-derived GQDs, we have identified two of them as intrinsic carbon-centered magnetic defect centers (a broad signal of peak to peak width = 697 (10{sup −4} T), g = 2.0023; and a narrow signal of peak to peak width = 60 (10{sup −4} T), g = 2.003). The third defect center is Mn{sup 2+} ({sup 6}S{sub 5/2}, 3d{sup 5}) (signal width = 61 (10{sup −4} T), g = 2.0023, A{sub iso} = 93(10{sup −4} T)), and the fourth defect is identified as Cu{sup 2+} ({sup 2}D{sub 5/2}, 3d{sup 9}) (g{sub ⊥} = 2.048 and g{sub ‖} = 2.279), previously undetected. Coke-derived and non-coal derived GQDs show Mn{sup 2+} and two-carbon related signals, and no Cu{sup 2+} signal. The extrinsic impurities most likely originate from the starting coal. Furthermore, Raman, photoluminescence, and ESR measurements detected no noticeable changes in the properties of the bituminous GQDs after one year. This study highlights the importance of employing high frequency ESR spectroscopy in identifying the (magnetic) defects, which are roadblocks for spin relaxation times of graphene-based materials. These defects would not have been possible to probe by other spin transport measurements.

  1. Chemical synthesis and optical characterization of regular and magic-sized CdS quantum dot nanocrystals using 1-dodecanethiol

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dickson, Rachel E.; Hu, Michael Z.

    2015-03-23

    In this study, cadmium sulfide (CdS) quantum dot (QD) nanoparticles have been synthesized using a one-pot noninjection reaction procedure in solvent medium 1-octadecene. This approach used a cadmium salt and 1-dodecanethiol, an organic sulfur, as the cadmium and sulfur sources, respectively, along with a long-chain organic acid (myristic acid, lauric acid, or stearic acid). The acid has dual effects as a surface capping ligand and a solubility controlling agent as well. UV–Vis and photoluminescence (PL) spectrometry techniques were used to characterize the optical properties, along with transmission electron microscopy (TEM) to identify the structure and size. Our newly developed synthesismore » procedure allowed for investigation of both regular and “magic-sized” CdS QDs by systematically controlling reaction parameters such as reactant type, reactant concentration, and reaction temperature. The organic sulfur (1-dodecanethiol) proved to be a useful sulfur source for synthesizing magic-sized CdS QDs, previously unreported. Several distinctive size regimes of magic-sized quantum dots (MSQDs), including Families 378 and 407, were successfully produced by controlling a small number of factors. Finally, the understanding of controlled Cd release in a MSQD formation mechanism is developed.« less

  2. Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

    SciTech Connect (OSTI)

    Dey, Anup; Maiti, Biswajit; Chanda, Debasree

    2014-04-14

    A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k{sup ?}) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg{sub 1?x}Cd{sub x}Te, and In{sub 1?x}Ga{sub x}As{sub y}P{sub 1?y} lattice matched to InP, as example of IIIV compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

  3. Spin filtering in a double quantum dot device: Numerical renormalization group study of the internal structure of the Kondo state

    SciTech Connect (OSTI)

    Vernek, E.; Bsser, C. A.; Anda, E. V.; Feiguin, A. E.; Martins, G. B.

    2014-03-31

    A double quantum dot device, connected to two channels that only interact through interdot Coulomb repulsion, is analyzed using the numerical renormalization group technique. Using a two-impurity Anderson model, and realistic parameter values [S. Amasha, A. J. Keller, I. G. Rau, A. Carmi, J. A. Katine, H. Shtrikman, Y. Oreg, and D. Goldhaber-Gordon, Phys. Rev. Lett. 110, 046604 (2013)], it is shown that, by applying a moderate magnetic field and independently adjusting the gate potential of each quantum dot at half-filling, a spin-orbital SU(2) Kondo state can be achieved where the Kondo resonance originates from spatially separated parts of the device. Our results clearly link this spatial separation effect to currents with opposing spin polarizations in each channel, i.e., the device acts as a spin filter. In addition, an experimental probe of this polarization effect is suggested, pointing to the exciting possibility of experimentally probing the internal structure of an SU(2) Kondo state.

  4. Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001)

    SciTech Connect (OSTI)

    Dupuy, E.; Regreny, P.; Robach, Y.; Gendry, M.; Chauvin, N.; Tranvouez, E.; Bremond, G.; Bru-Chevallier, C.; Patriarche, G.

    2006-09-18

    The authors report on a postgrowth method to obtain low density InAs/InP(001) quantum dots by solid-source molecular beam epitaxy. They used an approach based on the ripening of the InAs sticks, which is triggered by the sample cooling under arsenic overpressure, before InP capping. Atomic force microscopy images show the evolution of InAs islands from sticks oriented along the [1-10] direction to dot-shaped islands with a density that can be reduced to about 2x10{sup 9} dots/cm{sup 2}. Macro- and microphotoluminescence reveal that these diluted InAs dots exhibit a strong spatial confinement and emit in the 1.55 {mu}m range.

  5. Surface X-Ray Diffraction Results on the III-V Droplet Heteroepitaxy Growth Process for Quantum Dots: Recent Understanding and Open Questions

    SciTech Connect (OSTI)

    Cohen, Eyal; Elfassy, Naomi; Koplovitz, Guy; Yochelis, Shira; Shusterman, Sergey; Kumah, Divine P.; Yacoby, Yizhak; Clarke, Roy; Paltiel, Yossi

    2011-11-08

    In recent years, epitaxial growth of self-assembled quantum dots has offered a way to incorporate new properties into existing solid state devices. Although the droplet heteroepitaxy method is relatively complex, it is quite relaxed with respect to the material combinations that can be used. This offers great flexibility in the systems that can be achieved. In this paper we review the structure and composition of a number of quantum dot systems grown by the droplet heteroepitaxy method, emphasizing the insights that these experiments provide with respect to the growth process. Detailed structural and composition information has been obtained using surface X-ray diffraction analyzed by the COBRA phase retrieval method. A number of interesting phenomena have been observed: penetration of the dots into the substrate (“nano-drilling”) is often encountered; interdiffusion and intermixing already start when the group III droplets are deposited, and structure and composition may be very different from the one initially intended.

  6. Effect of parameter variations on the static and dynamic behaviour of a self-assembled quantum-dot laser using circuit-level modelling

    SciTech Connect (OSTI)

    Razm-Pa, M; Emami, F

    2015-01-31

    We report a new circuit model for a self-assembled quantum-dot (SAQD) laser made of InGaAs/GaAs structures. The model is based on the excited state and standard rate equations, improves the previously suggested circuit models and also provides and investigates the performance of this kind of laser. The carrier dynamic effects on static and dynamic characteristics of a SAQD laser are analysed. The phonon bottleneck problem is simulated. Quantum-dot lasers are shown to be quite sensitive to the crystal quality outside and inside quantum dots. The effects of QD coverage factor, inhomogeneous broadening, the physical source of which is the size fluctuation of quantum dots formed by self-assembly of atoms, and cavity length on the SAQD laser characteristics are analysed. The results of simulation show that an increase in the cavity length and in the QD coverage factor results in the growth of the output power. On the other hand, an increase in the coverage factor and a degradation of inhomogeneous broadening lead to an increase in the modulation bandwidth. The effect of the QD height (cylindrical shape) and stripe width of the laser cavity on QD laser modulation is also analysed. (lasers)

  7. Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering: A self-ordered quantum dot crystal

    SciTech Connect (OSTI)

    Sritirawisarn, N.; Otten, F. W. M. van; Eijkemans, T. J.; Noetzel, R.

    2008-09-29

    Multilayer-stacked linear InAs quantum dot (QD) arrays are created on InAs/InGaAsP superlattice templates formed by self-organized anisotropic strain engineering on InP (100) substrates in chemical beam epitaxy. Stacking of the QD arrays with identical emission wavelength in the 1.55 {mu}m region at room temperature is achieved through the insertion of ultrathin GaAs interlayers beneath the QDs with increasing interlayer thickness in successive layers. The increment in the GaAs interlayer thickness compensates the QD size/wavelength increase during strain correlated stacking. This is the demonstration of a three-dimensionally self-ordered QD crystal with fully controlled structural and optical properties.

  8. Nanodiamond-based nanostructures for coupling nitrogen-vacancy centres to metal nanoparticles and semiconductor quantum dots

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gong, Jianxiao; Steinsultz, Nat; Ouyang, Min

    2016-06-08

    The ability to control the interaction between nitrogen-vacancy centres in diamond and photonic and/or broadband plasmonic nanostructures is crucial for the development of solid-state quantum devices with optimum performance. However, existing methods typically employ top-down fabrication, which restrict scalable and feasible manipulation of nitrogen-vacancy centres. Here, we develop a general bottom-up approach to fabricate an emerging class of freestanding nanodiamond-based hybrid nanostructures with external functional units of either plasmonic nanoparticles or excitonic quantum dots. Precise control of the structural parameters ( including size, composition, coverage and spacing of the external functional units) is achieved, representing a pre-requisite for exploring themore » underlying physics. Fine tuning of the emission characteristics through structural regulation is demonstrated by performing single-particle optical studies. Lastly, this study opens a rich toolbox to tailor properties of quantum emitters, which can facilitate design guidelines for devices based on nitrogenvacancy centres that use these freestanding hybrid nanostructures as building blocks.« less

  9. High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

    SciTech Connect (OSTI)

    Wang, Zihao; Preble, Stefan F.; Yao, Ruizhe; Lee, Chi-Sen; Guo, Wei; Lester, Luke F.

    2015-12-28

    InAs quantum dot (QD) laser heterostructures have been grown by molecular beam epitaxy system on GaAs substrates, and then transferred to silicon substrates by a low temperature (250 °C) Pd-mediated wafer bonding process. A low interfacial resistivity of only 0.2 Ω cm{sup 2} formed during the bonding process is characterized by the current-voltage measurements. The InAs QD lasers on Si exhibit comparable characteristics to state-of-the-art QD lasers on silicon substrates, where the threshold current density J{sub th} and differential quantum efficiency η{sub d} of 240 A/cm{sup 2} and 23.9%, respectively, at room temperature are obtained with laser bars of cavity length and waveguide ridge of 1.5 mm and 5 μm, respectively. The InAs QD lasers also show operation up to 100 °C with a threshold current density J{sub th} and differential quantum efficiency η{sub d} of 950 A/cm{sup 2} and 9.3%, respectively. The temperature coefficient T{sub 0} of 69 K from 60 to 100 °C is characterized from the temperature dependent J{sub th} measurements.

  10. Determination of heterojunction band offsets between CdS bulk and PbS quantum dots using photoelectron spectroscopy

    SciTech Connect (OSTI)

    Bhandari, Khagendra P.; Mahabaduge, Hasitha; Ellingson, Randy J.; Choi, Hyekyoung; Jeong, Sohee

    2014-09-29

    Photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (ΔE{sub V}) of a CdS/PbS quantum dot (QD) heterojunction for which the PbS QD layer was deposited using solution based layer-by-layer dip coating method on top of RF magnetron sputtered CdS. A value of ΔE{sub V} = 1.73 eV was obtained using the Cd 3d and Pb 4f energy levels as references. Given the band gap energies of the CdS and PbS-QD layers, the conduction band offset ΔE{sub C} was determined to be 0.71 eV.

  11. Covalent Coupling of Organophosphorus Hydrolase Loaded Quantum Dots to Carbon Nanotube/Au Nanocomposite for Enhanced Detection of Methyl Parathion

    SciTech Connect (OSTI)

    Du, Dan; Chen, Wenjuan; Zhang, Weiying; Liu, Deli; Li, Haibing; Lin, Yuehe

    2010-02-15

    An amperometric biosensor for highly selective and sensitive determination of methyl parathion (MP) was developed based on dual signal amplification: (1) a large amount of introduced enzyme on the electrode surface and (2) synergistic effects of nanoparticles towards enzymatic catalysis. The fabrication process includes (1) electrochemical deposition of gold nanoparticles by a multi-potential step technique at multiwalled carbon nanotube (MWCNT) film pre-cast on a glassy carbon electrode and (2) immobilization of methyl parathion degrading enzyme (MPDE) onto a modified electrode through CdTe quantum dots (CdTe QDs) covalent attachment. The introduced MWCNT and gold nanoparticles significantly increased the surface area and exhibited synergistic effects towards enzymatic catalysis. CdTe QDs are further used as carriers to load a large amount of enzyme. As a result of these two important enhancement factors, the proposed biosensor exhibited extremely sensitive, perfectly selective, and rapid response to methyl parathion in the absence of a mediator.

  12. Influence of Gaussian white noise on the frequency-dependent first nonlinear polarizability of doped quantum dot

    SciTech Connect (OSTI)

    Ganguly, Jayanta; Ghosh, Manas

    2014-05-07

    We investigate the profiles of diagonal components of frequency-dependent first nonlinear (β{sub xxx} and β{sub yyy}) optical response of repulsive impurity doped quantum dots. We have assumed a Gaussian function to represent the dopant impurity potential. This study primarily addresses the role of noise on the polarizability components. We have invoked Gaussian white noise consisting of additive and multiplicative characteristics (in Stratonovich sense). The doped system has been subjected to an oscillating electric field of given intensity, and the frequency-dependent first nonlinear polarizabilities are computed. The noise characteristics are manifested in an interesting way in the nonlinear polarizability components. In case of additive noise, the noise strength remains practically ineffective in influencing the optical responses. The situation completely changes with the replacement of additive noise by its multiplicative analog. The replacement enhances the nonlinear optical response dramatically and also causes their maximization at some typical value of noise strength that depends on oscillation frequency.

  13. Spin power and efficiency in an Aharnov-Bohm ring with an embedded magnetic impurity quantum dot

    SciTech Connect (OSTI)

    Yang, Xi; Guo, Yong; Zheng, Jun; Chi, Feng

    2015-05-11

    Spin thermoelectric effects in an Aharnov-Bohm ring with a magnetic impurity quantum dot (QD) are theoretically investigated by using the nonequilibrium Green's function method. It is found that due to the exchange coupling between the impurity and the electrons in QD, spin output power, and efficiency can be significant and be further modulated by the gate voltage. The spin thermoelectric effect can be modulated effectively by adjusting the Rashba spin-orbit interaction (RSOI) and the magnetic flux. The spin power and efficiency show zigzag oscillations, and thus spin thermoelectric effect can be switched by adjusting the magnetic flux phase factor and RSOI ones. In addition, the spin efficiency can be significantly enhanced by the coexistence of the RSOI and the magnetic flux, and the maximal value of normalized spin efficiency ?{sub max}/?{sub C}?=?0.35 is obtained. Our results show that such a QD ring device may be used as a manipulative spin thermoelectric generator.

  14. Gate-controlled terahertz single electron photovoltaic effect in self-assembled InAs quantum dots

    SciTech Connect (OSTI)

    Zhang, Y. Nagai, N.; Shibata, K.; Hirakawa, K.; Ndebeka-Bandou, C.; Bastard, G.

    2015-09-07

    We have observed a terahertz (THz) induced single electron photovoltaic effect in self-assembled InAs quantum dots (QDs). We used a single electron transistor (SET) geometry that consists of a single InAs QD and nanogap electrodes coupled with a bowtie antenna. Under a weak, broadband THz radiation, a photocurrent induced by THz intersublevel transitions in the QD is generated even when no bias voltage is applied to the SET. The observed single electron photovoltaic effect is due to an energy-dependent tunneling asymmetry in the QD-SET. Moreover, the tunneling asymmetry changes not only with the shell but also with the electron number in the QD, suggesting the manybody nature of the electron wavefunctions. The THz photovoltaic effect observed in the present QD-SET system may have potential applications to nanoscale energy harvesting.

  15. Comparative electron paramagnetic resonance investigation of reduced graphene oxide and carbon nanotubes with different chemical functionalities for quantum dot attachment

    SciTech Connect (OSTI)

    Pham, Chuyen V.; Krueger, Michael E-mail: emre.erdem@physchem.uni-freiburg.de; Eck, Michael; Weber, Stefan; Erdem, Emre E-mail: emre.erdem@physchem.uni-freiburg.de

    2014-03-31

    Electron paramagnetic resonance (EPR) spectroscopy has been applied to different chemically treated reduced graphene oxide (rGO) and multiwalled carbon nanotubes (CNTs). A narrow EPR signal is visible at g?=?2.0029 in both GO and CNT-Oxide from carbon-related dangling bonds. EPR signals became broader and of lower intensity after oxygen-containing functionalities were reduced and partially transformed into thiol groups to obtain thiol-functionalized reduced GO (TrGO) and thiol-functionalized CNT (CNT-SH), respectively. Additionally, EPR investigation of CdSe quantum dot-TrGO hybrid material reveals complete quenching of the TrGO EPR signal due to direct chemical attachment and electronic coupling. Our work confirms that EPR is a suitable tool to detect spin density changes in different functionalized nanocarbon materials and can contribute to improved understanding of electronic coupling effects in nanocarbon-nanoparticle hybrid nano-composites promising for various electronic and optoelectronic applications.

  16. Characterization of electrospray ion-beam-deposited CdSe/ZnS quantum dot thin films from a colloidal solution

    SciTech Connect (OSTI)

    Tani, Yuki; Kobayashi, Satoshi; Kawazoe, Hiroshi

    2008-07-15

    Colloidal semiconductor quantum dot (QD) nanocrystals can be deposited in the form of inorganic thin films using the ion beam direct deposition method. To simultaneously preserve the nanocrystal configuration and remove the organics derived from the ligand and solvent, the authors used an electrospray technique and an ion beam technique. These techniques provided a soft-ionization process to obtain nanocrystalline ions and a collision process to attain a nonequilibrium state of the deposits, respectively. Because of the nature of the soft-ionization process, the electrospray phenomenon resulted in various forms of QD ions that depended on the preparation of the colloidal solution source and spraying conditions. The authors concentrated on finding operational conditions of the system that deposited thin films with reduced organics concentrations by examining the correlation between fast Fourier transform infrared absorption spectroscopy and photoluminescence intensity. The morphology of the deposited films was observed using an atomic force microscope.

  17. Blinking suppression of CdTe quantum dots on epitaxial graphene and the analysis with Marcus electron transfer

    SciTech Connect (OSTI)

    Hirose, Takuya; Tamai, Naoto, E-mail: tamai@kwansei.ac.jp [Department of Chemistry, School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337 (Japan); Kutsuma, Yasunori; Kurita, Atsusi; Kaneko, Tadaaki [Department of Physics, School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337 (Japan)

    2014-08-25

    We have prepared epitaxial graphene by a Si sublimation method from 4H-SiC. Single-particle spectroscopy of CdTe quantum dots (QDs) on epitaxial graphene covered with polyvinylpyrrolidone (PVP) or polyethylene glycol (PEG) showed the suppression of luminescence blinking and ?10 times decreased luminescence intensity as compared with those on a glass. The electronic coupling constant, H{sub 01}, between CdTe QDs and graphene was calculated to be (3.3??0.4)??10{sup 2?}cm{sup ?1} in PVP and (3.7??0.8)??10{sup 2?}cm{sup ?1} in PEG based on Marcus theory of electron transfer and Tang-Marcus model of blinking with statistical distribution.

  18. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  19. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  20. Cascaded emission of linearly polarized single photons from positioned InP/GaInP quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Unsleber, S.; Baumann, V.; Schneider, C.; Hfling, S.; Kamp, M.; Gschrey, M.; Rodt, S.; Reitzenstein, S.

    2013-11-04

    We report on the optical characterization of site-controlled InP/GaInP quantum dots (QDs). Spatially resolved low temperature cathodoluminescence proves the long-range ordering of the buried emitters, revealing a yield of ?90% of optically active, positioned QDs and a strong suppression of emitters on interstitial positions. The emission of single QDs shows a pronounced degree of linear polarization along the [0,?1,1] crystal axis with an average degree of polarization of 94%. Photon correlation measurements of the emission from a single QD indicate the single-photon character of the exciton and biexciton emission lines as well as the cascaded nature of the photon pair.

  1. Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots

    SciTech Connect (OSTI)

    Huang, S.; Kim, S. J.; Pan, X. Q.; Goldman, R. S.

    2014-07-21

    We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.

  2. Method to produce nanocrystalline powders of oxide-based phosphors for lighting applications

    DOE Patents [OSTI]

    Loureiro, Sergio Paulo Martins; Setlur, Anant Achyut; Williams, Darryl Stephen; Manoharan, Mohan; Srivastava, Alok Mani

    2007-12-25

    Some embodiments of the present invention are directed toward nanocrystalline oxide-based phosphor materials, and methods for making same. Typically, such methods comprise a steric entrapment route for converting precursors into such phosphor material. In some embodiments, the nanocrystalline oxide-based phosphor materials are quantum splitting phosphors. In some or other embodiments, such nanocrystalline oxide based phosphor materials provide reduced scattering, leading to greater efficiency, when used in lighting applications.

  3. Evidence of significant down-conversion in a Si-based solar cell using CuInS{sub 2}/ZnS core shell quantum dots

    SciTech Connect (OSTI)

    Gardelis, Spiros Nassiopoulou, Androula G.

    2014-05-05

    We report on the increase of up to 37.5% in conversion efficiency of a Si-based solar cell after deposition of light-emitting Cd-free, CuInS{sub 2}/ZnS core shell quantum dots on the active area of the cell due to the combined effect of down-conversion and the anti- reflecting property of the dots. We clearly distinguished the effect of down-conversion from anti-reflection and estimated an enhancement of up to 10.5% in the conversion efficiency due to down-conversion.

  4. Intersubband absorption in CdSe/Zn{sub x}Cd{sub y}Mg{sub 1-x-y}Se self-assembled quantum dot multilayers

    SciTech Connect (OSTI)

    Shen, A.; Lu, H.; Charles, W.; Yokomizo, I.; Tamargo, M. C.; Franz, K. J.; Gmachl, C.; Zhang, S. K.; Zhou, X.; Alfano, R. R.; Liu, H. C.

    2007-02-12

    The authors report the observation of intersubband absorption in multilayers of CdSe/Zn{sub x}Cd{sub y}Mg{sub 1-x-y}Se self-assembled quantum dots. The samples were grown by molecular beam epitaxy on InP substrates. For samples with the CdSe dot layers doped with Cl and with the deposited CdSe equivalent layer thickness between 5.2 and 6.9 ML, peak absorption between 2.5 and 3.5 {mu}m was observed. These materials are promising for intersubband devices operating in the mid- and near-infrared ranges.

  5. Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H{sup ?}) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors

    SciTech Connect (OSTI)

    Mandal, A.; Ghadi, H.; Mathur, K.L.; Basu, A.; Subrahmanyam, N.B.V.; Singh, P.; Chakrabarti, S.

    2013-08-01

    Graphical abstract: - Abstract: Here we propose a carrier transport mechanism for low energy H{sup ?} ions implanted InAs/GaAs quantum dot infrared photodetectors supportive of the experimental results obtained. Dark current density suppression of up to four orders was observed in the implanted quantum dot infrared photodetectors, which further demonstrates that they are effectively operational. We concentrated on determining how defect-related material and structural changes attributed to implantation helped in dark current density reduction for InAs/GaAs quantum dot infrared photodetectors. This is the first study to report the electrical carrier transport mechanism of H{sup ?} ion-implanted InAs/GaAs quantum dot infrared photodetectors.

  6. Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells

    SciTech Connect (OSTI)

    Kim, Yeongho; Ban, Keun-Yong Zhang, Chaomin; Honsberg, Christiana B.

    2015-10-12

    We have studied the material and photovoltaic characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells (QDSCs) with different Sb contents of 0%, 5%, 15%, and 20%. All QDSCs exhibit an extended external quantum efficiency (EQE) response in the wavelength range of 960–1000 nm that corresponds to sub-bandgap photon absorption. As Sb content increases from 5% to 20%, the cutoff wavelength in the EQE extends towards longer wavelength whilst the EQE in the wavelength region of 300–880 nm is lowered due to increased defect density. Compared to the QDSC (Sb 0%), an Sb incorporation of 5% enhances the short-circuit current density from 20.65 to 22.15 mA/cm{sup 2} induced by Sb surfactant effect. Since the open-circuit voltage and fill factor of the QDSC (Sb 5%) are comparable to those of the QDSC (Sb 0%), an enhancement in solar cell efficiency (10.5%) of the QDSC (Sb 5%) is observed. Further increasing Sb content to 15% and 20% results in the degradation of solar cell performance due to increased nonradiative recombination and large valence band offset in a type-II band line-up.

  7. Double capping of molecular beam epitaxy grown InAs/InP quantum dots studied by cross-sectional scanning tunneling microscopy

    SciTech Connect (OSTI)

    Ulloa, J. M.; Koenraad, P. M.; Gapihan, E.; Letoublon, A.; Bertru, N.

    2007-08-13

    Cross-sectional scanning tunneling microscopy was used to study at the atomic scale the double capping process of self-assembled InAs/InP quantum dots (QDs) grown by molecular beam epitaxy on a (311)B substrate. The thickness of the first capping layer is found to play a mayor role in determining the final results of the process. For first capping layers up to 3.5 nm, the height of the QDs correspond to the thickness of the first capping layer. Nevertheless, for thicknesses higher than 3.5 nm, a reduction in the dot height compared to the thickness of the first capping layer is observed. These results are interpreted in terms of a transition from a double capping to a classical capping process when the first capping layer is thick enough to completely cover the dots.

  8. Direct and indirect capture of carriers into the lasing ground state and the light-current characteristic of quantum dot lasers

    SciTech Connect (OSTI)

    Wu, Yuchang Asryan, Levon V.

    2014-03-14

    We calculate the light-current characteristic (LCC) of a quantum dot (QD) laser under the conditions of both direct and indirect capture of carriers from the optical confinement layer into the lasing ground state in QDs. We show that direct capture is a dominant process determining the ground-state LCC. Only when direct capture is slow, the role of indirect capture (capture into the QD excited state and subsequent intradot relaxation to the ground state) becomes important.

  9. Suppression of thermal carrier escape and efficient photo-carrier generation by two-step photon absorption in InAs quantum dot intermediate-band solar cells using a dot-in-well structure

    SciTech Connect (OSTI)

    Asahi, S.; Teranishi, H.; Kasamatsu, N.; Kada, T.; Kaizu, T.; Kita, T.

    2014-08-14

    We investigated the effects of an increase in the barrier height on the enhancement of the efficiency of two-step photo-excitation in InAs quantum dot (QD) solar cells with a dot-in-well structure. Thermal carrier escape of electrons pumped in QD states was drastically reduced by sandwiching InAs/GaAs QDs with a high potential barrier of Al{sub 0.3}Ga{sub 0.7}As. The thermal activation energy increased with the introduction of the barrier. The high potential barrier caused suppression of thermal carrier escape and helped realize a high electron density in the QD states. We observed efficient two-step photon absorption as a result of the high occupancy of the QD states at room temperature.

  10. Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

    SciTech Connect (OSTI)

    Ziouche, K. E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Bougrioua, Z. E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Lejeune, P.; Lasri, T.; Leclercq, D.; Savelli, G.; Hauser, D.; Michon, P.-M.

    2014-07-28

    This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (?SIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a factor up to 10 compared to the one of standard polysilicon layers that are usually used for IR sensor applications. A presentation of several TE layers, QDSL and polysilicon, is given before to describe the fabrication of the thermopile-based sensors. The theoretical values of the sensitivity to irradiance of ?SIR can be predicted thanks to an analytical model. These findings are used to interpret the experimental measurements versus the nature of the TE layer exploited in the devices. The use of nanostructured QDSL as the main material in ?SIR thermopile has brought a sensitivity improvement of about 28% consistent with theoretical predictions. The impact of QDSL low thermal conductivity is damped by the contribution of the thermal conductivity of all the other sub-layers that build up the device.

  11. Size and Temperature Dependence of Electron Transfer between CdSe Quantum Dots and a TiO 2 Nanobelt

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tafen, De Nyago; Prezhdo, Oleg V.

    2015-02-24

    Understanding charge transfer reactions between quantum dots (QD) and metal oxides is fundamental for improving photocatalytic, photovoltaic and electronic devices. The complexity of these processes makes it difficult to find an optimum QD size with rapid charge injection and low recombination. We combine time-domain density functional theory with nonadiabatic molecular dynamics to investigate the size and temperature dependence of the experimentally studied electron transfer and charge recombination at CdSe QD-TiO2 nanobelt (NB) interfaces. The electron injection rate shows strong dependence on the QD size, increasing for small QDs. The rate exhibits Arrhenius temperature dependence, with the activation energy of themore » order of millielectronvolts. The charge recombination process occurs due to coupling of the electronic subsystem to vibrational modes of the TiO2 NB. Inelastic electron-phonon scattering happens on a picosecond time scale, with strong dependence on the QD size. Our simulations demonstrate that the electron-hole recombination rate decreases significantly as the QD size increases, in excellent agreement with experiments. The temperature dependence of the charge recombination rates can be successfully modeled within the framework of the Marcus theory through optimization of the electronic coupling and the reorganization energy. Our simulations indicate that by varying the QD size, one can modulate the photoinduced charge separation and charge recombination, fundamental aspects of the design principles for high efficiency devices.« less

  12. Transport properties and Kondo correlations in nanostructures: Time-dependent DMRG method applied to quantum dots coupled to Wilson chains

    SciTech Connect (OSTI)

    Dias Da Silva, Luis G; Heidrich-Meisner, Fabian; Feiguin, Adrian E; Busser, C. A.; Martins, G. B.; Anda, E. V.; Dagotto, Elbio R

    2008-01-01

    We apply the adaptive time-dependent density-matrix renormalization-group method tDMRG to the study of transport properties of quantum-dot systems connected to metallic leads. Finite-size effects make the usual tDMRG description of the Kondo regime a numerically demanding task. We show that such effects can be attenuated by describing the leads by Wilson chains, in which the hopping matrix elements decay exponentially away from the impurity tn n/2. For a given system size and in the linear-response regime, results for 1 show several improvements over the undamped =1 case: perfect conductance is obtained deeper in the strongly interacting regime and current plateaus remain well defined for longer time scales. Similar improvements were obtained in the finite-bias regime up to bias voltages of the order of the Kondo temperature. These results show that with the proposed modification, the tDMRG characterization of Kondo correlations in the transport properties can be substantially improved, while it turns out to be sufficient to work with much smaller system sizes. We discuss the numerical cost of this approach with respect to the necessary system sizes and the entanglement growth during the time evolution.

  13. Magnetooptical study of CdSe/ZnMnSe semimagnetic quantum-dot ensembles with n-type modulation doping

    SciTech Connect (OSTI)

    Reshina, I. I. Ivanov, S. V.

    2014-12-15

    Magnetic and polarization investigations of the photoluminescence and resonant electron spin-flip Raman scattering in ensembles of self-organized CdSe/ZnMnSe semimagnetic quantum dots with n-type modulation doping are carried out. It is demonstrated that exciton transitions contribute to the photoluminescence band intensity, along with the transitions of trions in the singlet state. In the Hanle-effect measurements, negative circular polarization in zero magnetic field is observed, which is related to the optical orientation of a trion heavy hole. The lifetime and spin-relaxation time of a heavy hole are estimated as ?3 and ?1 ps, respectively. Such short times are assumed to be due to Auger recombination with the excitation of an intrinsic transition in a Mn{sup 2+} ion. Investigations of the photoluminescence-maximum intensity and shift in a longitudinal magnetic field at the ?{sup ?}?{sup +} and ?{sup ?}?{sup ?} polarizations reveal the pronounced spin polarization of electrons. Under resonant excitation conditions, a sharp increase in the photoluminescence-band maximum intensity at ?{sup ?} excitation polarization over the ?{sup +} one is observed. The Raman scattering peak at the electron spin-flip transition is observed upon resonant excitation in a transverse magnetic field in crossed linear polarizations. This peak is shown to be a Brillouin function of a magnetic field.

  14. CdSe/ZnS quantum dots based electrochemical immunoassay for the detection of phosphorylated bovine serum albumin

    SciTech Connect (OSTI)

    Pinwattana, Kulwadee; Wang, Jun; Lin, Chiann Tso; Wu, Hong; Du, Dan; Lin, Yuehe; Chailapakul, Orawon

    2010-11-15

    A CdSe/ZnS quantum dot (QD) based electrochemical immunoassay of phosphorylated bovine serum albumin as a protein biomarker is presented. The QDs were used as labels and were conjugated with the secondary anti-phosphoserine antibody in a heterogeneous sandwich immunoassay. First, the primary BSA antibody was immobilized on polystyrene microwells, followed by the addition of BSA-OP. After that, the QD-labeled anti-phosphoserine antibody was added into microwells for immunorecognition. Finally, the bound QD was dissolved in an acid-dissolution step and was detected by electrochemical stripping analysis. The measured current responses were proportional to the concentration of BSA-OP. Under optimal conditions, the voltammetric response was linear over the range of 0.5 - 500 ng mL-1 of BSA-OP, with a detection limit of 0.5 ng mL-1 at a deposition potential of -1.2 V for 120 s. It also shows good reproducibility with a relative standard deviation of 8.6% of six times determination of 25 ng mL-1 of BSA-OP. This QD-based electrochemical immunoassay offers great promise for simple and cost-effective analysis of protein biomarkers.

  15. Realization of solid-state nanothermometer using Ge quantum-dot single-hole transistor in few-hole regime

    SciTech Connect (OSTI)

    Chen, I. H.; Lai, W. T.; Li, P. W.

    2014-06-16

    Semiconductor Ge quantum-dot (QD) thermometry has been demonstrated based on extraordinary temperature-dependent oscillatory differential conductance (G{sub D}) characteristics of Ge-QD single-hole transistors (SHTs) in the few-hole regime. Full-voltage width-at-half-minimum, V{sub 1/2}, of G{sub D} valleys appears to be fairly linear in the charge number (n) and temperature within the QD in a relationship of eV{sub 1/2}???(1???0.11n)??5.15k{sub B}T, providing the primary thermometric quantity. The depth of G{sub D} valley is also proportional to charging energy (E{sub C}) and 1/T via ?G{sub D}???E{sub C}/9.18k{sub B}T, providing another thermometric quantity. This experimental demonstration suggests our Ge-QD SHT offering effective building blocks for nanothermometers over a wide temperature range with a detection temperature as high as 155?K in a spatial resolution less than 10?nm and temperature accuracy of sub-kelvin.

  16. Cadmium sulfate and CdTe-quantum dots alter DNA repair in zebrafish (Danio rerio) liver cells

    SciTech Connect (OSTI)

    Tang, Song; Cai, Qingsong; Chibli, Hicham; Allagadda, Vinay; Nadeau, Jay L.; Mayer, Gregory D.

    2013-10-15

    Increasing use of quantum dots (QDs) makes it necessary to evaluate their toxicological impacts on aquatic organisms, since their contamination of surface water is inevitable. This study compares the genotoxic effects of ionic Cd versus CdTe nanocrystals in zebrafish hepatocytes. After 24 h of CdSO{sub 4} or CdTe QD exposure, zebrafish liver (ZFL) cells showed a decreased number of viable cells, an accumulation of Cd, an increased formation of reactive oxygen species (ROS), and an induction of DNA strand breaks. Measured levels of stress defense and DNA repair genes were elevated in both cases. However, removal of bulky DNA adducts by nucleotide excision repair (NER) was inhibited with CdSO{sub 4} but not with CdTe QDs. The adverse effects caused by acute exposure of CdTe QDs might be mediated through differing mechanisms than those resulting from ionic cadmium toxicity, and studying the effects of metallic components may be not enough to explain QD toxicities in aquatic organisms. - Highlights: Both CdSO{sub 4} and CdTe QDs lead to cell death and Cd accumulation. Both CdSO{sub 4} and CdTe QDs induce cellular ROS generation and DNA strand breaks. Both CdSO{sub 4} and CdTe QDs induce the expressions of stress defense and DNA repair genes. NER repair capacity was inhibited with CdSO{sub 4} but not with CdTe QDs.

  17. Comparing Multiple Exciton Generation in Quantum Dots To Impact Ionization in Bulk Semiconductors: Implications for Enhancement of Solar Energy Conversion

    SciTech Connect (OSTI)

    Beard, Matthew C.; Midgett, Aaron G.; Hanna, Mark C.; Luther, Joseph M.; Hughes, Barbara K.; Nozik, Arthur J.

    2010-07-26

    Multiple exciton generation (MEG) in quantum dots (QDs) and impact ionization (II) in bulk semiconductors are processes that describe producing more than one electron-hole pair per absorbed photon. We derive expressions for the proper way to compare MEG in QDs with II in bulk semiconductors and argue that there are important differences in the photophysics between bulk semiconductors and QDs. Our analysis demonstrates that the fundamental unit of energy required to produce each electron-hole pair in a given QD is the band gap energy. We find that the efficiency of the multiplication process increases by at least 2 in PbSe QDs compared to bulk PbSe, while the competition between cooling and multiplication favors multiplication by a factor of 3 in QDs. We also demonstrate that power conversion efficiencies in QD solar cells exhibiting MEG can greatly exceed conversion efficiencies of their bulk counterparts, especially if the MEG threshold energy can be reduced toward twice the QD band gap energy, which requires a further increase in the MEG efficiency. Finally, we discuss the research challenges associated with achieving the maximum benefit of MEG in solar energy conversion since we show the threshold and efficiency are mathematically related.

  18. Synthesis and Optical Properties of Thiol Functionalized CdSe/ZnS (Core/Shell) Quantum Dots by Ligand Exchange

    SciTech Connect (OSTI)

    Zhu, Huaping; Hu, Michael Z.; Shao, Lei; Yu, Kui; Dabestani, Reza T; Zaman, Md. Badruz; Liao, Dr. Shijun

    2014-03-20

    The colloidal photoluminescent quantum dots (QDs) of CdSe (core) and CdSe/ZnS (core/shell) were synthesized at different temperatures with different growth periods. The optical properties (i.e., UV/Vis spectra and photoluminescent emission spectra) of the resulting QDs were investigated. The CdSe/ZnS QDs exhibited higher photoluminescent (PL) efficiency and stability than their corresponding CdSe core QDs. Ligand exchange with various thiol molecules was performed to replace the initial surface passivation ligands, that is, trioctylphosphine oxide (TOPO) and trioctylphosphine (TOP), and the optical properties of the surface-modified QDs were studied. The thiol ligand molecules used included 1,4-benzenedimethanethiol, 1,16-hexadecanedithiol, 1,11-undecanedithiol, 11-mercapto-1-undecanol, and 1,8 octanedithiol. After the thiol functionalization, the CdSe/ZnS QDs exhibited significantly enhanced PL efficiency and storage stability. Besides surface passivation effect, such enhanced performance of thiol-functionalized QDs could be due to self-assembly formation of dimer/trimer clusters, in which QDs are linked by dithiol molecules. Effects of ligand concentration, type of ligand, and heating on the thiol stabilization of QDs were also discussed.

  19. Rare earth phosphors and phosphor screens

    DOE Patents [OSTI]

    Buchanan, Robert A.; Maple, T. Grant; Sklensky, Alden F.

    1981-01-01

    This invention relates to rare earth phosphor screens for converting image carrying incident radiation to image carrying visible or near-visible radiation and to the rare earth phosphor materials utilized in such screens. The invention further relates to methods for converting image carrying charged particles to image carrying radiation principally in the blue and near-ultraviolet region of the spectrum and to stabilized rare earth phosphors characterized by having a continuous surface layer of the phosphors of the invention. More particularly, the phosphors of the invention are oxychlorides and oxybromides of yttrium, lanthanum and gadolinium activated with trivalent cerium and the conversion screens are of the type illustratively including x-ray conversion screens, image amplifier tube screens, neutron imaging screens, cathode ray tube screens, high energy gamma ray screens, scintillation detector screens and screens for real-time translation of image carrying high energy radiation to image carrying visible or near-visible radiation.

  20. The dynamics of energy and charge transfer in lead sulfide quantum dot solids

    SciTech Connect (OSTI)

    Lingley, Zachary; Lu, Siyuan; Madhukar, Anupam

    2014-02-28

    We report on a systematic time-resolved photoluminescence study of the competing energy and charge transfer rates in PbS QDs of differing sizes in the same QD solid as a function of both temperature and ligand-controlled different inter-QD average separations. This complements previous studies that typically varied only one parameter and reveals new aspects while also confirming some known features. For the smallest PbS QDs, the dominant decay process is nonradiative resonant energy transfer (NRET) to adjacent larger dots for all separations but at a rate that increases with decreasing temperature. For the largest QDs, NRET being forbidden, the decay is found to be exponential in the inter-QD separation consistent with carrier tunneling but, for each fixed tunneling distance, exhibiting a thermally activated tunneling carrier population with the activation energy dependent upon the ligand length controlling the inter-QD separation. A consistent understanding of this expanded and rich decay rate behavior of both large and small QDs, we show, can be obtained by accounting for the ligand length dependent (a) dielectric environment of the QD solid modeled using an effective medium description, (b) the energy cost of dissociating the exciton into electron and hole in neighboring QDs, and (c) the potential participation of midgap states. Implications of the findings for NRET based photovoltaics are discussed.

  1. Electronic structure and correlated wave functions of a few electron quantum dots

    SciTech Connect (OSTI)

    Sako, Tokuei; Ishida, Hiroshi; Fujikawa, Kazuo

    2015-01-22

    The energy spectra and wave functions of a few electrons confined by a quasi-one-dimensional harmonic and anharmonic potentials have been studied by using a full configuration interaction method employing a Cartesian anisotropic Gaussian basis set. The energy spectra are classified into three regimes of the strength of confinement, namely, large, medium and small. The polyad quantum number defined by a total number of nodes in the wave functions is shown to be a key ingredient to interpret the energy spectra for the whole range of the confinement strength. The nodal pattern of the wave functions exhibits normal modes for the harmonic confining potential, indicating collective motions of electrons. These normal modes are shown to undergo a transition to local modes for an anharmonic potential with large anharmonicity.

  2. Photopumped red-emitting InP/In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition

    SciTech Connect (OSTI)

    Ryou, J. H.; Dupuis, R. D.; Walter, G.; Kellogg, D. A.; Holonyak, N.; Mathes, D. T.; Hull, R.; Reddy, C. V.; Narayanamurti, V.

    2001-06-25

    We report the 300 K operation of optically pumped red-emitting lasers fabricated from InP self-assembled quantum dots embedded in In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P layers on GaAs (100) substrates grown by metalorganic chemical vapor deposition. Quantum dots grown at 650{degree}C on In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P layers have a high density on the order of 10{sup 10} cm{sup {minus}2} and the dominant size of individual quantum dots ranges from {similar_to}5 to {similar_to}10 nm for 7.5 monolayer {open_quotes}equivalent growth.{close_quotes} These InP/In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P quantum dot heterostructures are characterized by atomic force microscopy, high-resolution transmission electron microscopy, and photoluminescence. Laser structures are prepared from wafers having two vertically stacked InP quantum dot active layers within a 100-nm-thick In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P waveguide and upper and lower 600 nm InAlP cladding layers. We observe lasing at {lambda}{similar_to}680 nm at room temperature in optically pumped samples. {copyright} 2001 American Institute of Physics.

  3. Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

    SciTech Connect (OSTI)

    Bremner, S. P.; Ban, K.-Y.; Faleev, N. N.; Honsberg, C. B.; Smith, D. J.

    2013-09-14

    We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

  4. Tailoring local density of optical states to control emission intensity and anisotropy of quantum dots in hybrid photonic-plasmonic templates

    SciTech Connect (OSTI)

    Indukuri, Chaitanya; Mukherjee, Arnab; Basu, J. K.

    2015-03-30

    We report results of controlled tuning of the local density of states (LDOS) in versatile, flexible, and hierarchical self assembled plasmonic templates. Using 5 nm diameter gold (Au) spherical nanoantenna within a polymer template randomly dispersed with quantum dots, we show how the photoluminescence intensity and lifetime anisotropy of these dots can be significantly enhanced through LDOS tuning. Finite difference time domain simulations corroborate the experimental observations and extend the regime of enhancement to a wider range of geometric and spectral parameters bringing out the versatility of these functional plasmonic templates. It is also demonstrated how the templates act as plasmonic resonators for effectively engineer giant enhancement of the scattering efficiency of these nano antenna embedded in the templates. Our work provides an alternative method to achieve spontaneous emission intensity and anisotropy enhancement with true nanoscale plasmon resonators.

  5. Two-Step Nucleation and Growth of InP Quantum Dots via Magic-Sized Cluster Intermediates

    SciTech Connect (OSTI)

    Gary, Dylan C.; Terban, Maxwell W.; Billinge, Simon J. L.; Cossairt, Brandi M.

    2015-01-30

    We report on the role of magic-sized clusters (MSCs) as key intermediates in the synthesis of indium phosphide quantum dots (InP QDs) from molecular precursors. These observations suggest that previous efforts to control nucleation and growth by tuning precursor reactivity have been undermined by formation of these kinetically persistent MSCs prior to QD formation. The thermal stability of InP MSCs is influenced by the presence of exogenous bases as well as choice of the anionic ligand set. Addition of a primary amine, a common additive in previous InP QD syntheses, to carboxylate terminated MSCs was found to bypass the formation of MSCs, allowing for homogeneous growth of InP QDs through a continuum of isolable sizes. Substitution of the carboxylate ligand set for a phosphonate ligand set increased the thermal stability of one particular InP MSC to 400°C. The structure and optical properties of the MSCs with both carboxylate and phosphonate ligand sets were studied by UV-Vis absorption spectroscopy, powder XRD analysis, and solution ³¹P{¹H} and ¹H NMR spectroscopy. Finally, the carboxylate terminated MSCs were identified as effective single source precursors (SSPs) for the synthesis of high quality InP QDs. Employing InP MSCs as SSPs for QDs effectively decouples the formation of MSCs from the subsequent second nucleation event and growth of InP QDs. The concentration dependence of this SSP reaction, as well as the shape uniformity of particles observed by TEM suggests that the stepwise growth from MSCs directly to QDs proceeds via a second nucleation event rather than an aggregative growth mechanism.

  6. Two-Step Nucleation and Growth of InP Quantum Dots via Magic-Sized Cluster Intermediates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gary, Dylan C.; Terban, Maxwell W.; Billinge, Simon J. L.; Cossairt, Brandi M.

    2015-01-30

    We report on the role of magic-sized clusters (MSCs) as key intermediates in the synthesis of indium phosphide quantum dots (InP QDs) from molecular precursors. These observations suggest that previous efforts to control nucleation and growth by tuning precursor reactivity have been undermined by formation of these kinetically persistent MSCs prior to QD formation. The thermal stability of InP MSCs is influenced by the presence of exogenous bases as well as choice of the anionic ligand set. Addition of a primary amine, a common additive in previous InP QD syntheses, to carboxylate terminated MSCs was found to bypass the formationmore » of MSCs, allowing for homogeneous growth of InP QDs through a continuum of isolable sizes. Substitution of the carboxylate ligand set for a phosphonate ligand set increased the thermal stability of one particular InP MSC to 400°C. The structure and optical properties of the MSCs with both carboxylate and phosphonate ligand sets were studied by UV-Vis absorption spectroscopy, powder XRD analysis, and solution ³¹P{¹H} and ¹H NMR spectroscopy. Finally, the carboxylate terminated MSCs were identified as effective single source precursors (SSPs) for the synthesis of high quality InP QDs. Employing InP MSCs as SSPs for QDs effectively decouples the formation of MSCs from the subsequent second nucleation event and growth of InP QDs. The concentration dependence of this SSP reaction, as well as the shape uniformity of particles observed by TEM suggests that the stepwise growth from MSCs directly to QDs proceeds via a second nucleation event rather than an aggregative growth mechanism.« less

  7. CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

    SciTech Connect (OSTI)

    Sedova, I. V. Lyublinskaya, O. G.; Sorokin, S. V.; Sitnikova, A. A.; Toropov, A. A.; Donatini, F.; Dang, Si Le; Ivanov, S. V.

    2007-11-15

    A procedure for formation of CdSe quantum dots (QDs) in a ZnSe matrix is suggested. The procedure is based on the introduction of a CdTe submonolayer stressor deposited on the matrix surface just before deposition of the material of the QDs. (For CdTe/ZnSe structure, the relative lattice mismatch is {delta}a/a {approx} 14%.) The stressor forms small strained islands at the ZnSe surface, thus producing local fields of high elastic stresses controlling the process of the self-assembling of the QDs. According to the data of transmission electron microscopy, this procedure allows a considerable increase in the surface density of QDs, with a certain decrease in their lateral dimensions (down to 4.5 {+-} 1.5 nm). In the photoluminescence spectra, a noticeable ({approx}150 meV) shift of the peak to longer wavelengths from the position of the reference CdSe/ZnSe QD structure is observed. The shift is due to some transformation of the morphology of the QDs and an increase in the Cd content in the QDs. Comprehensive studies of the nanostructures by recording and analyzing the excitation spectra of photoluminescence, the time-resolved photoluminescence spectra, and the cathodoluminescence spectra show that the emission spectra involve two types of optical transitions, namely, the type-I transitions in the CdSeTe/ZnSe QDs and the type-II transitions caused mainly by the low cadmium content (Zn,Cd)(Se,Te)/ZnSe layer formed between the QDs.

  8. Probing the dependence of electron transfer on size and coverage in carbon nanotube-quantum dot heterostructures

    SciTech Connect (OSTI)

    Wang, Lei; Wong, Stanislaus S.; Han, Jinkyu; Zhu, Yuqi; Jaye, Cherno; Liu, Haiqing; Li, Zhuo -Qun; Taylor, Gordon T.; Fischer, Daniel A.; Appenzeller, Joerg; Zhu, Ruiping

    2015-11-16

    As a model system for understanding charge transfer in novel architectural designs for solar cells, double-walled carbon nanotube (DWNT)–CdSe quantum dot (QD) (QDs with average diameters of 2.3, 3.0, and 4.1 nm) heterostructures have been fabricated. The individual nanoscale building blocks were successfully attached and combined using a hole-trapping thiol linker molecule, i.e., 4-mercaptophenol (MTH), through a facile, noncovalent π–π stacking attachment strategy. Transmission electron microscopy confirmed the attachment of QDs onto the external surfaces of the DWNTs. We herein demonstrate a meaningful and unique combination of near-edge X-ray absorption fine structure (NEXAFS) and Raman spectroscopies bolstered by complementary electrical transport measurements in order to elucidate the synergistic interactions between CdSe QDs and DWNTs, which are facilitated by the bridging MTH molecules that can scavenge photoinduced holes and potentially mediate electron redistribution between the conduction bands in CdSe QDs and the C 2p-derived states of the DWNTs. Specifically, we correlated evidence of charge transfer as manifested by (i) changes in the NEXAFS intensities of π* resonance in the C K-edge and Cd M3-edge spectra, (ii) a perceptible outer tube G-band downshift in frequency in Raman spectra, as well as (iii) alterations in the threshold characteristics present in transport data as a function of CdSe QD deposition onto the DWNT surface. Furthermore, the separate effects of (i) varying QD sizes and (ii) QD coverage densities on the electron transfer were independently studied.

  9. Probing the dependence of electron transfer on size and coverage in carbon nanotube-quantum dot heterostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Lei; Wong, Stanislaus S.; Han, Jinkyu; Zhu, Yuqi; Jaye, Cherno; Liu, Haiqing; Li, Zhuo -Qun; Taylor, Gordon T.; Fischer, Daniel A.; Appenzeller, Joerg; et al

    2015-11-16

    As a model system for understanding charge transfer in novel architectural designs for solar cells, double-walled carbon nanotube (DWNT)–CdSe quantum dot (QD) (QDs with average diameters of 2.3, 3.0, and 4.1 nm) heterostructures have been fabricated. The individual nanoscale building blocks were successfully attached and combined using a hole-trapping thiol linker molecule, i.e., 4-mercaptophenol (MTH), through a facile, noncovalent π–π stacking attachment strategy. Transmission electron microscopy confirmed the attachment of QDs onto the external surfaces of the DWNTs. We herein demonstrate a meaningful and unique combination of near-edge X-ray absorption fine structure (NEXAFS) and Raman spectroscopies bolstered by complementary electricalmore » transport measurements in order to elucidate the synergistic interactions between CdSe QDs and DWNTs, which are facilitated by the bridging MTH molecules that can scavenge photoinduced holes and potentially mediate electron redistribution between the conduction bands in CdSe QDs and the C 2p-derived states of the DWNTs. Specifically, we correlated evidence of charge transfer as manifested by (i) changes in the NEXAFS intensities of π* resonance in the C K-edge and Cd M3-edge spectra, (ii) a perceptible outer tube G-band downshift in frequency in Raman spectra, as well as (iii) alterations in the threshold characteristics present in transport data as a function of CdSe QD deposition onto the DWNT surface. Furthermore, the separate effects of (i) varying QD sizes and (ii) QD coverage densities on the electron transfer were independently studied.« less

  10. Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Mary?ski, A.; S?k, G.; Musia?, A.; Andrzejewski, J.; Misiewicz, J.; Gilfert, C.; Reithmaier, J. P.; Capua, A.; Karni, O.; Gready, D.; Eisenstein, G.; Atiya, G.; Kaplan, W. D.; Klling, S.

    2013-09-07

    The optical and structural properties of a new kind of InAs/InGaAlAs/InP quantum dot (QD)-like objects grown by molecular beam epitaxy have been investigated. These nanostructures were found to have significantly more symmetrical shapes compared to the commonly obtained dash-like geometries typical of this material system. The enhanced symmetry has been achieved due to the use of an As{sub 2} source and the consequent shorter migration length of the indium atoms. Structural studies based on a combination of scanning transmission electron microscopy (STEM) and atom probe tomography (APT) provided detailed information on both the structure and composition distribution within an individual nanostructure. However, it was not possible to determine the lateral aspect ratio from STEM or APT. To verify the in-plane geometry, electronic structure calculations, including the energy levels and transition oscillator strength for the QDs have been performed using an eight-band kp model and realistic system parameters. The results of calculations were compared to measured polarization-resolved photoluminescence data. On the basis of measured degree of linear polarization of the surface emission, the in-plane shape of the QDs has been assessed proving a substantial increase in lateral symmetry. This results in quantum-dot rather than quantum-dash like properties, consistent with expectations based on the growth conditions and the structural data.

  11. Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si

    SciTech Connect (OSTI)

    Halder, Nripendra N.; Biswas, Pranab; Banerji, P.; Dhabal Das, Tushar; Das, Sanat Kr.; Chattopadhyay, S.; Biswas, D.

    2014-01-28

    A detailed analysis of photoluminescence (PL) from InP quantum dots (QDs) grown on Si has been carried out to understand the effect of substrate/host material in the luminescence and carrier escape process from the surface quantum dots. Such studies are required for the development of monolithically integrated next generation III-V QD based optoelectronics with fully developed Si microelectronics. The samples were grown by atmospheric pressure metalorganic chemical vapor deposition technique, and the PL measurements were made in the temperature range 1080?K. The distribution of the dot diameter as well as the dot height has been investigated from atomic force microscopy. The origin of the photoluminescence has been explained theoretically. The band alignment of InP/Si heterostructure has been determined, and it is found be type II in nature. The positions of the conduction band minimum of Si and the 1st excited state in the conduction band of InP QDs have been estimated to understand the carrier escape phenomenon. A blue shift with a temperature co-efficient of 0.19?meV/K of the PL emission peak has been found as a result of competitive effect of different physical processes like quantum confinement, strain, and surface states. The corresponding effect of blue shift by quantum confinement and strain as well as the red shift by the surface states in the PL peaks has been studied. The origin of the luminescence in this heterojunction is found to be due to the recombination of free excitons, bound excitons, and a transition from the 1st electron excited state in the conduction band (e{sub 1}) to the heavy hole band (hh{sub 1}). Monotonic decrease in the PL intensity due to increase of thermally escaped carriers with temperature has been observed. The change in barrier height by the photogenerated electric-field enhanced the capture of the carriers by the surface states rather than their accumulation in the QD excited state. From an analysis of the dependence of the

  12. Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity

    SciTech Connect (OSTI)

    Hsu, Kung-Shu; Chang, Shu-Wei; Hung, Wei-Chun; Chang, Chih-Chi; Lin, Wei-Hsun; Lin, Shih-Yen; Shih, Min-Hsiung; Lee, Po-Tsung; Chang, Yia-Chung

    2015-08-31

    We demonstrated the lasing action and remarkable reduction in long radiative lifetimes of type-II GaSb/GaAs quantum dots using a circular photonic-crystal nano-cavity with high Purcell factors. The associated enhancement in carrier recombination was surprisingly high and could even surpass type-I counterparts in similar conditions. These phenomena reveal that the type-II sample exhibited extremely low nonradiative recombination so that weak radiative transitions were more dominant than expected. The results indicate that type-II nanostructures may be advantageous for applications which require controllable radiative transitions but low nonradiative depletions.

  13. Quantum-dot light-emitting diodes utilizing CdSe/ZnS nanocrystals embedded in TiO{sub 2} thin film

    SciTech Connect (OSTI)

    Kang, Seung-Hee; Kumar, Ch. Kiran; Kim, Eui-Tae; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul

    2008-11-10

    Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe/ZnS nanocrystals in TiO{sub 2} thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO{sub 2}/QDs/p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO{sub 2}/QDs/Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

  14. Final Report for DE-FG36-08GO18007 "All-Inorganic, Efficient Photovoltaic Solid State Devices Utilizing Semiconducting Colloidal Nanocrystal Quantum Dots"

    SciTech Connect (OSTI)

    Vladimir Bulovic and Moungi Bawendi

    2011-09-30

    We demonstrated robust colloidal quantum dot (QD) photovoltaics with high internal quantum efficiencies. In our structures, device durability is derived from use of all-inorganic atmospherically-stable semiconducting metal-oxide films together with QD photoreceptors. We have shown that both QD and metal-oxide semiconducting films and contacts are amenable to room temperature processing under minimal vacuum conditions, enabling large area processing of PV structures of high internal efficiency. We generated the state of the art devices with power conversion efficiency of more than 4%, and have shown that efficiencies as high as 9% are achievable in the near-term, and as high as 17% in the long-term.

  15. Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors

    SciTech Connect (OSTI)

    Nedzinskas, R. ?echavi?ius, B.; Rimkus, A.; Pozingyt?, E.; Kavaliauskas, J.; Valuis, G.; Li, L. H.; Linfield, E. H.

    2015-04-14

    We present a photoreflectance (PR) study of multi-layer InAs quantum dot (QD) photodetector structures, incorporating InGaAs overgrown layers and positioned asymmetrically within GaAs/AlAs quantum wells (QWs). The influence of the back-surface reflections on the QD PR spectra is explained and a temperature-dependent photomodulation mechanism is discussed. The optical interband transitions originating from the QD/QW ground- and excited-states are revealed and their temperature behaviour in the range of 3300?K is established. In particular, we estimated the activation energy (?320?meV) of exciton thermal escape from QD to QW bound-states at high temperatures. Furthermore, from the obtained Varshni parameters, a strain-driven partial decomposition of the InGaAs cap layer is determined.

  16. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

    SciTech Connect (OSTI)

    Verma, Jai Islam, S. M.; Protasenko, Vladimir; Kumar Kandaswamy, Prem; Xing, Huili; Jena, Debdeep

    2014-01-13

    Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandgaps are necessary for electrical carrier injection. This approach requires the activation of very deep dopants in very wide bandgap semiconductors, which is a difficult task. In this work, an approach is proposed and experimentally demonstrated to counter the challenges. The active region of the heterostructure light emitting diode uses ultrasmall epitaxially grown GaN quantum dots. Remarkably, the optical emission energy from GaN is pushed from 365?nm (3.4?eV, the bulk bandgap) to below 240?nm (>5.2?eV) because of extreme quantum confinement in the dots. This is possible because of the peculiar bandstructure and band alignments in the GaN/AlN system. This active region design crucially enables two further innovations for efficient carrier injection: Tunnel injection of carriers and polarization-induced p-type doping. The combination of these three advances results in major boosts in electroluminescence in deep-ultraviolet light emitting diodes and lays the groundwork for electrically pumped short-wavelength lasers.

  17. New Class of Quantum Dots Makes the Leap from SBIR Project to Small-Business Market Success

    Broader source: Energy.gov [DOE]

    Renaissance Lighting, an American small business headquartered in Herndon, Virginia, showcased the SoliaTM lamp, an innovative downlight, at the May 2010 LIGHTFAIR, becoming the first manufacturer to apply a new phosphor-converted LED technology with superior lumen efficacy and color rendering, and offering warm color temperatures. What was the back story behind this promising product introduction? An SBIR-funded research project initiated by Nanomaterials & Nanofabrication Laboratories (NN-Labs, LLC) in 2007.

  18. Optical rectification in a strained GaAs{sub 0.9}P{sub 0.1}/GaAs{sub 0.6}P{sub 0.4} quantum dot: Simultaneous effects of electric and magnetic fields

    SciTech Connect (OSTI)

    Vinolin, Ada; Peter, A. John

    2014-04-24

    Simultaneous effects of electric field and magnetic field on exciton binding energy as a function of dot radius in a cylindrical GaAs{sub 0.9}P{sub 0.1}/GaAs{sub 0.6}P{sub 0.4} strained quantum dot are investigated. The strain contribution includes the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Numerical calculations are performed using variational procedure within the single band effective mass approximation. Optical rectification in the GaAs{sub 0.9}P{sub 0.1}/GaAs{sub 0.6}P{sub 0.4} quantum dot is computed in the presence of electric and magnetic fields.

  19. Caged Quantum Dots

    ScienceCinema (OSTI)

    Cohen, Bruce

    2013-05-29

    Berkeley Lab scientists have developed a nanosized crystal that lights up on command, a feat that could allow researchers to more easily observe individual proteins inside cells. http://newscenter.lbl.gov/feature-stories/2008/11/18/cagedquantumdots/

  20. Kimzeyite garnet phosphors

    DOE Patents [OSTI]

    Lyons, Robert Joseph

    2013-05-14

    A phosphor of formula I is included in a phosphor composition in a lighting apparatus capable of emitting white light, Ca.sub.3-x-zSr.sub.xCe.sub.zM.sup.1.sub.2M.sup.2AlSiO.sub.12 (I) wherein M.sup.1 is Hf, Zr, or a combination thereof; M.sup.2 is Al, or a combination of Al and Ga; z<3-x; and 0.2>x.gtoreq.0. The lighting apparatus includes a semiconductor light source in addition to the phosphor composition.

  1. High temperature thermometric phosphors

    DOE Patents [OSTI]

    Allison, Stephen W.; Cates, Michael R.; Boatner, Lynn A.; Gillies, George T.

    1999-03-23

    A high temperature phosphor consists essentially of a material having the general formula LuPO.sub.4 :Dy.sub.(x),Eu.sub.y) wherein: 0.1 wt %.ltoreq.x.ltoreq.20 wt % and 0.1 wt %.ltoreq.y.ltoreq.20 wt %. The high temperature phosphor is in contact with an article whose temperature is to be determined. The article having the phosphor in contact with it is placed in the environment for which the temperature of the article is to be determined. The phosphor is excited by a laser causing the phosphor to fluoresce. The emission from the phosphor is optically focused into a beam-splitting mirror which separates the emission into two separate emissions, the emission caused by the dysprosium dopant and the emission caused by the europium dopent. The separated emissions are optically filtered and the intensities of the emission are detected and measured. The ratio of the intensity of each emission is determined and the temperature of the article is calculated from the ratio of the intensities of the separate emissions.

  2. High temperature thermometric phosphors

    DOE Patents [OSTI]

    Allison, S.W.; Cates, M.R.; Boatner, L.A.; Gillies, G.T.

    1999-03-23

    A high temperature phosphor consists essentially of a material having the general formula LuPO{sub 4}:Dy{sub x},Eu{sub y} wherein: 0.1 wt % {<=} x {<=} 20 wt % and 0.1 wt % {<=} y {<=} 20 wt %. The high temperature phosphor is in contact with an article whose temperature is to be determined. The article having the phosphor in contact with it is placed in the environment for which the temperature of the article is to be determined. The phosphor is excited by a laser causing the phosphor to fluoresce. The emission from the phosphor is optically focused into a beam-splitting mirror which separates the emission into two separate emissions, the emission caused by the dysprosium dopant and the emission caused by the europium dopant. The separated emissions are optically filtered and the intensities of the emission are detected and measured. The ratio of the intensity of each emission is determined and the temperature of the article is calculated from the ratio of the intensities of the separate emissions. 2 figs.

  3. Phosphors for LED lamps

    DOE Patents [OSTI]

    Murphy, James Edward; Manepalli, Satya Kishore; Kumar, Prasanth Nammalwar

    2013-08-13

    A phosphor, a phosphor blend including the phosphor, a phosphor prepared by a process, and a lighting apparatus including the phosphor blend are disclosed. The phosphor has the formula (Ca.sub.1-p-qCe.sub.pK.sub.q).sub.xSc.sub.y(Si.sub.1-rGa.sub.r).sub.zO.su- b.12+.delta. or derived from a process followed using disclosed amounts of reactants. In the formula, (0

  4. Phosphor thermometry system

    DOE Patents [OSTI]

    Beshears, David L.; Sitter, Jr., David N.; Andrews, William H.; Simpson, Marc L.; Abston, Ruth A.; Cates, Michael R.; Allison, Steve W.

    2000-01-01

    An apparatus for measuring the temperature of a moving substrate includes an air gun with a powder inlet port in communication with the outlet port of a powder reservoir, an air inlet port in communication with a pressurized air source, and an outlet nozzle spaced from and directed toward the moving substrate. The air gun is activated by the air pulses to spray controlled amounts of the powdered phosphor onto the moving substrate, where the phosphor assumes the temperature of the moving substrate. A laser produces light pulses, and optics direct the light pulses onto the phosphor on the moving substrate, in response to which the phosphor emits a luminescence with a decay rate indicative of the temperature of the phosphor. A collection lens is disposed to focus the luminescence, and a photodetector detects the luminescence focused by the collection lens and produces an electrical signal that is characteristic of the brightness of the luminescence. A processor analyzes the electrical signal to determine the decay characteristic of the luminescence and to determine the temperature of the phosphor from the decay characteristic.

  5. Study on dynamics of photoexcited charge injection and trapping in CdS quantum dots sensitized TiO{sub 2} nanowire array film electrodes

    SciTech Connect (OSTI)

    Pang, Shan; Cheng, Ke; Yuan, Zhanqiang; Xu, Suyun; Cheng, Gang; Du, Zuliang

    2014-05-19

    The photoexcited electrons transfer dynamics of the CdS quantum dots (QDs) deposited in TiO{sub 2} nanowire array films are studied using surface photovoltage (SPV) and transient photovoltage (TPV) techniques. By comparing the SPV results with different thicknesses of QDs layers, we can separate the dynamic characteristics of photoexcited electrons injection and trapping. It is found that the TPV signals of photoexcited electrons trapped in the CdS QDs occur at timescales of about 2??10{sup ?8} s, which is faster than that of the photoexcited electrons injected from CdS into TiO{sub 2}. More than 90 nm of the thickness of the CdS QDs layer will seriously affect the photoexcited electrons transfer and injection.

  6. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect (OSTI)

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  7. Chemical bonding and defect states of LPCVD grown silicon-rich Si{sub 3}N{sub 4} for quantum dot applications

    SciTech Connect (OSTI)

    Mohammed, Shakil Hinkle, Christopher L.; Nimmo, Michael T.; Malko, Anton V.

    2014-03-15

    Si-rich Si{sub 3}N{sub 4} (SRN) thin films were investigated to understand the various defect states present within the SRN that can lead to reduced performance in quantum dot based devices made of these materials. The SRN films, deposited by low pressure chemical vapor deposition followed by furnace anneals over a range of temperatures, were determined to be comprised of two distinct phase separated SRN regions with different compositions (precipitates within a host matrix). Photoluminescence (PL) spectra showed multiple peaks convoluted together within the visible and near-visible range. Depending on deposition and annealing conditions, the films displayed changes in PL peak intensities which were correlated with chemical bonding utilizing x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and capacitance–voltage measurements. It is found that the PL originates from defect-state to defect-state and band edge to defect-state electronic transitions.

  8. The effect of charged quantum dots on the mobility of a two-dimensional electron gas: How important is the Coulomb scattering?

    SciTech Connect (OSTI)

    Kurzmann, A. Beckel, A.; Lorke, A.; Geller, M.; Ludwig, A.; Wieck, A. D.

    2015-02-07

    We have investigated the influence of a layer of charged self-assembled quantum dots (QDs) on the mobility of a nearby two-dimensional electron gas (2DEG). Time-resolved transconductance spectroscopy was used to separate the two contributions of the change in mobility, which are: (i) The electrons in the QDs act as Coulomb scatterers for the electrons in the 2DEG. (ii) The screening ability and, hence, the mobility of the 2DEG decreases when the charge carrier density is reduced by the charged QDs, i.e., the mobility itself depends on the charge carrier concentration. Surprisingly, we find a negligible influence of the Coulomb scattering on the mobility for a 2DEG, separated by a 30 nm tunneling barrier to the layer of QDs. This means that the mobility change is completely caused by depletion, i.e., reduction of the charge carrier density in the 2DEG, which indirectly influences the mobility.

  9. Influence of interfacial oxide on the optical properties of single layer CdTe/CdS quantum dots in porous silicon scaffolds

    SciTech Connect (OSTI)

    Gaur, Girija; Fleetwood, Daniel M.; Weller, Robert A.; Reed, Robert A.; Weiss, Sharon M.; Koktysh, Dmitry S.

    2015-08-10

    Using a combination of continuous wave and time-resolved spectroscopy, we study the effects of interfacial conditions on the radiative lifetimes and photoluminescence intensities of sub-monolayer colloidal CdTe/CdS quantum dots (QDs) embedded in a three-dimensional porous silicon (PSi) scaffold. The PSi matrix was thermally oxidized under different conditions to change the interfacial oxide thickness. QDs embedded in a PSi matrix with ∼0.4 nm of interfacial oxide exhibited reduced photoluminescence intensity and nearly five times shorter radiative lifetimes (∼16 ns) compared to QDs immobilized within completely oxidized, porous silica (PSiO{sub 2}) frameworks (∼78 ns). The exponential dependence of QD lifetime on interfacial oxide thickness in the PSi scaffolds suggests charge transfer plays an important role in the exciton dynamics.

  10. Enhanced photoluminescence due to two-photon enhanced three-photon absorption in Mn{sup 2+}-doped ZnS quantum dots

    SciTech Connect (OSTI)

    Subha, Radhu; Nalla, Venkatram; Ji, Wei; Feng, Xiaobo; Vijayan, C.

    2014-10-15

    In this work, we have investigated the multi-photon absorption induced photoluminescence in Mn{sup 2+}-doped ZnS quantum dots in the wavelength range 860 – 1050 nm (Near-Infrared Window I). The observed three-photon action cross-section has been compared with the theoretical prediction under four band approximation. An enhancement of four to five orders has been observed in the range from 970 to 1050 nm compared to the theoretical value, which is attributed to two-photon enhanced three-photon absorption. Transient lifetime measurements reveal a lifetime of 0.35 ± 0.3 ms, which is four to five orders higher than other conventional fluorescent probes.

  11. Single photon emission of a charge-tunable GaAs/Al{sub 0.25}Ga{sub 0.75}As droplet quantum dot device

    SciTech Connect (OSTI)

    Langer, Fabian Plischke, David; Kamp, Martin; Hfling, Sven

    2014-08-25

    In this work, we report the fabrication of a charge-tunable GaAs/Al{sub 0.25}Ga{sub 0.75}As quantum dot (QD) device containing QDs deposited by modified droplet epitaxy producing almost strain and composition gradient free QDs. We obtained a QD density in the low 10{sup 9?}cm{sup ?2} range that enables us to perform spectroscopy on single droplet QDs showing linewidths as narrow as 40??eV. The integration of the QDs into a Schottky diode allows us to controllably charge a single QD with up to four electrons, while non-classical photoluminescence is proven by photon auto-correlation measurements showing photon-antibunching (g{sup (2)}(0)?=?0.05).

  12. Mortalin antibody-conjugated quantum dot transfer from human mesenchymal stromal cells to breast cancer cells requires cellcell interaction

    SciTech Connect (OSTI)

    Pietil, Mika; Lehenkari, Petri; Kuvaja, Paula; Kaakinen, Mika; Kaul, Sunil C.; Wadhwa, Renu; Uemura, Toshimasa

    2013-11-01

    The role of tumor stroma in regulation of breast cancer growth has been widely studied. However, the details on the type of heterocellular cross-talk between stromal and breast cancer cells (BCCs) are still poorly known. In the present study, in order to investigate the intercellular communication between human mesenchymal stromal cells (hMSCs) and breast cancer cells (BCCs, MDA-MB-231), we recruited cell-internalizing quantum dots (i-QD) generated by conjugation of cell-internalizing anti-mortalin antibody and quantum dots (QD). Co-culture of illuminated and color-coded hMSCs (QD655) and BCCs (QD585) revealed the intercellular transfer of QD655 signal from hMSCs to BCCs. The amount of QD double positive BCCs increased gradually within 48 h of co-culture. We found prominent intercellular transfer of QD655 in hanging drop co-culture system and it was non-existent when hMSCs and BBCs cells were co-cultured in trans-well system lacking imminent cellcell contact. Fluorescent and electron microscope analyses also supported that the direct cell-to-cell interactions may be required for the intercellular transfer of QD655 from hMSCs to BCCs. To the best of our knowledge, the study provides a first demonstration of transcellular crosstalk between stromal cells and BCCs that involve direct contact and may also include a transfer of mortalin, an anti-apoptotic and growth-promoting factor enriched in cancer cells.

  13. Seed-mediated synthesis, properties and application of {gamma}-Fe{sub 2}O{sub 3}-CdSe magnetic quantum dots

    SciTech Connect (OSTI)

    Lin, Alex W.H.; Ang, Chung Yen; Patra, Pranab K.; Han Yu; Gu Hongwei; Le Breton, Jean-Marie; Juraszek, Jean; Chiron, Hubert; Papaefthymiou, Georgia C.; Tamil Selvan, Subramanian; Ying, Jackie Y.

    2011-08-15

    Seed-mediated growth of fluorescent CdSe quantum dots (QDs) around {gamma}-Fe{sub 2}O{sub 3} magnetic cores was performed at high temperature (300 deg. C) in the presence of organic surfactants. Bi-functional magnetic quantum dots (MQDs) with tunable emission properties were successfully prepared. The as-synthesized MQDs were characterized by high-resolution transmission electron microscopy (HRTEM) and dynamic light scattering (DLS), which confirmed the assembly of heterodimers. When a longer growth period was employed, a homogeneous dispersion of QDs around a magnetic nanoparticle was obtained. The magnetic properties of these nanocomposites were examined. The MQDs were superparamagnetic with a saturation magnetization of 0.40 emu/g and a coercivity of 138 Oe at 5 K. To demonstrate their potential application in bio-labeling, these MQDs were coated with a thin silica shell, and functionalized with a polyethylene glycol (PEG) derivative. The functionalized MQDs were effectively used for the labeling of live cell membranes of 4T1 mouse breast cancer cells and HepG2 human liver cancer cells. - Graphical abstract: (a) HRTEM image of oleic acid capped MPs. The size of MPs ranges from 8 to 10 nm. (b) XRD pattern of {gamma}-Fe{sub 2}O{sub 3} MPs. Highlights: > The fabrication of MQDs through a seed-mediated approach has been demonstrated. > The formation and assembly of these bi-functional nanocomposites have been elucidated. > The MQDs exhibit superparamagnetism and tunable emissions characteristic of the components. > MQDs with thin silica coating were successfully employed in the labeling of cancer cell membranes.

  14. GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics

    SciTech Connect (OSTI)

    Utrilla, A. D.; Ulloa, J. M. Guzman, A.; Hierro, A.

    2014-07-28

    The application of a GaAsSb/GaAsN short-period superlattice capping layer (CL) on InAs/GaAs quantum dots (QDs) is shown to be an option for providing improved luminescence properties to this system. Separating both GaAsSb and GaAsN ternaries during the growth in 2 monolayer-thick phases solves the GaAsSbN immiscibility-related problems. Strong fluctuations in the CL composition and strain field as well as in the QD size distribution are significantly reduced, and a more regular CL interface is also obtained. Room-temperature (RT) photoluminescence (PL) is obtained for overall N contents as high as 3%, yielding PL peak wavelengths beyond 1.4 μm in samples with a type-II band alignment. High external quantum efficiency electroluminescence and photocurrent from the QD ground state are also demonstrated at RT in a single QD-layer p-i-n device. Thus, it becomes possible to combine and transfer the complementary benefits of Sb- and N-containing GaAs alloys to InAs QD-based optoelectronics.

  15. 'Giant' multishell CdSe nanocrystal quantum dots with supporessed blinking: novel fluorescent probes for real-time detection of single-molecule events

    SciTech Connect (OSTI)

    Hollingsworth, Jennifer A; Vela, Javier; Htoon, Han; Klimov, Victor I; Casson, Amy R; Chen, Yongfen

    2009-01-01

    We reported for the first time that key nanocrystal quantum dot (NQD) optical properties-quantum yield, photobleaching and blinking-can be rendered independent ofNQD surface chemistry and environment by growth of a very thick, defect-free inorganic shell. Here, we show the precise shell-thickness dependence of these effects. We demonstrate that 'giant-shell' NQDs can be largely non-blinking for observation times as long as 54 minutes and lhat on-time fractions are independent of experimental time-resolution from 1-200 ms. These effects are primarily demonstrated on (CdSe)CdS (core)shell NQDs, but we also show that alloyed shells comprising Cd.Znl.'S and terminated with a non-cytotoxic ZnS layer exhibit similar properties. The mechanism for suppressed blinking and dramatically enhanced stability is attributed to both effective isolation of the NQD core excitonic wavefunction from the NQD surface, as well as a quasi-Type II electronic structure. The unusual electronic structure provides for effective spatial separation of the electron and hole into the shell and core, respectively, and, thereby, for reduced efficiencies in non-radiative Auger recombination.

  16. Optical properties of multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

    SciTech Connect (OSTI)

    Shoji, Yasushi; Akimoto, Katsuhiro; Okada, Yoshitaka

    2012-09-15

    Quantum dot solar cells (QDSCs) comprised of 10 stacked pairs of strain-compensated InGaAs/GaNAs QD structure have been fabricated by atomic hydrogen-assisted molecular beam epitaxy. A homogeneous and high-density QD array structure with improved in-plane ordering and total density of {approx}10{sup 12} cm{sup -2} has been achieved on GaAs (311)B grown at 460 Degree-Sign C after stacking. The external quantum efficiency (EQE) of InGaAs/GaNAs QDSC increases in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. The short-circuit current density measured for QDSC is 17.2 mA/cm{sup 2} compared to 14.8 mA/cm{sup 2} of GaAs reference cell. Further, an increase in EQE due to photocurrent production by 2-step photon absorption has been observed at room temperature though it is still small at around 0.1%.

  17. Chemical Control of Charge Trapping and Charge Transfer Processes at the Organic-Inorganic Interface within Quantum Dot-Organic Complexes

    SciTech Connect (OSTI)

    Weiss, Emily A.

    2015-11-06

    Within the research program funded through the Early Career Research Award we designed complexes of colloidal semiconductor quantum dots (QDs) and organic molecules in which the interfacial chemistry controls the electronic structure and dynamics of the excitonic state of the QD. The program included two main projects; (1) investigation of the mechanisms by which organic surfactants control the quantum confinement of excitonic charge carriers; and (2) development of models for electron transfer between QDs and adsorbed molecules as a function of interfacial chemistry. This project was extremely successful in that our achievements in those two areas addressed the great majority of questions we outlined in the original proposal and answered questions I did not think to ask in that original proposal. Our work led to the discovery of “exciton delocalizing ligands”, which change the electronic structure of colloidal semiconductor nanocrystals by altering, with small synthetic modifications to their surfaces, their most defining characteristic – the quantum confinement of their excited states. It also led to detailed, quantitative descriptions of how the surface chemistry of a QD dictates, thermodynamically and kinetically, the probability of exchange of electrons between the QD and a small molecule. We used two of the three major techniques in the proposal (transient photoluminescence and transient absorption). Electrogenerated chemiluminescence was also proposed, but was too technically difficult with these systems to be useful. Instead, NMR spectroscopy emerged as a major analytical tool in our studies. With the fundamental advancements we made with this project, we believe that we can design QDs to be the next great class of visible-light photocatalysts.

  18. Enhanced performance of branched TiO{sub 2} nanorod based Mn-doped CdS and Mn-doped CdSe quantum dot-sensitized solar cell

    SciTech Connect (OSTI)

    Kim, Soo-Kyoung; Gopi, Chandu V. V. M.; Lee, Jae-Cheol; Kim, Hee-Je

    2015-04-28

    TiO{sub 2} branched nanostructures could be efficient as photoanodes for quantum dot-sensitized solar cells (QDSCs) due to their large surface area for QD deposition. In this study, Mn-doped CdS/Mn-doped CdSe deposited branched TiO{sub 2} nanorods were fabricated to enhance the photovoltaic performance of QDSCs. Mn doping in CdS and CdSe retards the recombination losses of electrons, while branched TiO{sub 2} nanorods facilitate effective electron transport and compensate for the low surface area of the nanorod structure. As a result, the charge-transfer resistance (R{sub CT}), electron lifetime (?{sub e}), and the amount of QD deposition were significantly improved with branched TiO{sub 2} nanorod based Mn-doped CdS/Mn-doped CdSe quantum dot-sensitized solar cell.

  19. Light harvesting with Ge quantum dots embedded in SiO{sub 2} or Si{sub 3}N{sub 4}

    SciTech Connect (OSTI)

    Cosentino, Salvatore Raciti, Rosario; Simone, Francesca; Crupi, Isodiana; Terrasi, Antonio; Mirabella, Salvo; Sungur Ozen, Emel; Aydinli, Atilla; Mio, Antonio M.; Nicotra, Giuseppe; Turan, Rasit

    2014-01-28

    Germanium quantum dots (QDs) embedded in SiO{sub 2} or in Si{sub 3}N{sub 4} have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850?C to induce Ge QD precipitation in Si based matrices. By varying the Ge content, the QD diameter can be tuned in the 39?nm range in the SiO{sub 2} matrix, or in the 12?nm range in the Si{sub 3}N{sub 4} matrix, as measured by transmission electron microscopy. Thus, Si{sub 3}N{sub 4} matrix hosts Ge QDs at higher density and more closely spaced than SiO{sub 2} matrix. Raman spectroscopy revealed a higher threshold for amorphous-to-crystalline transition for Ge QDs embedded in Si{sub 3}N{sub 4} matrix in comparison with those in the SiO{sub 2} host. Light absorption by Ge QDs is shown to be more effective in Si{sub 3}N{sub 4} matrix, due to the optical bandgap (0.91.6?eV) being lower than in SiO{sub 2} matrix (1.22.2?eV). Significant photoresponse with a large measured internal quantum efficiency has been observed for Ge QDs in Si{sub 3}N{sub 4} matrix when they are used as a sensitive layer in a photodetector device. These data will be presented and discussed, opening new routes for application of Ge QDs in light harvesting devices.

  20. Atomic layer deposition effect on the electrical properties of Al{sub 2}O{sub 3}-passivated PbS quantum dot field-effect transistors

    SciTech Connect (OSTI)

    So, Hye-Mi; Shim, Hyung Cheoul; Choi, Hyekyoung; Lee, Seung-Mo; Jeong, Sohee; Chang, Won Seok

    2015-03-02

    We have investigated the effect of atomic layer deposition (ALD) on the electrical properties of colloidal PbS quantum dot field-effect transistors (PbS QD-FETs). Low-temperature Al{sub 2}O{sub 3} ALD process was used to fill up the pore spaces of PbS QD films containing 1, 2-ethanedithiol ligands. Upon deposition of Al{sub 2}O{sub 3} on PbS film, the PbS QD-FETs showed ambipolar behavior. The treated film retained this property for over 2 months, despite of exposure to air. This change in the electrical properties of the PbS QD-FETs is attributed to the formation of electron channels in the Al{sub 2}O{sub 3}-passivated PbS film. We conclude that these electron transport channels in the Al{sub x}O{sub y}-PbS film are formed due to substitution of the Pb sites by Al metal and chemical reduction of Pb{sup 2+} ions, as determined by an analysis of the depth profile of the film using secondary ion mass spectrometry and X-ray photoelectron spectroscopy.

  1. Quantum dot immunoassays in renewable surface column and 96-well plate formats for the fluorescence detection of Botulinum neurotoxin using high-affinity antibodies

    SciTech Connect (OSTI)

    Warner, Marvin G.; Grate, Jay W.; Tyler, Abby J.; Ozanich, Richard M.; Miller, Keith D.; Lou, Jianlong; Marks, James D.; Bruckner-Lea, Cindy J.

    2009-09-01

    A fluorescence sandwich immunoassay using high affinity antibodies and quantum dot (QD) reporters has been developed for detection of botulinum toxin serotype A (BoNT/A). For the development of the assay, a nontoxic recombinant fragment of the holotoxin (BoNT/A-HC-fragment) has been used as a structurally valid simulant for the full toxin molecule. The antibodies used, AR4 and RAZ1, bind to nonoverlapping epitopes present on both the full toxin and on the recombinant fragment. In one format, the immunoassay is carried out in a 96-well plate with detection in a standard plate reader. Detection down to 31 pM of the BoNT/Hc-fragment was demonstrated with a total incubation time of 3 hours, using AR4 as the capture antibody and QD-coupled RAZ1 as the reporter. In a second format, the AR4 capture antibody was coupled to Sepharose beads, and the immunochemical reactions were carried out in microcentrifuge tubes with an incubation time of 1 hour. These beads were subsequently captured and concentrated in a rotating rod renewable surface flow cell as part of a sequential injection fluidic system. This flow cell was equipped with a fiber optic system for fluorescence measurements. In PBS buffer solution matrix, the BoNT/A-HC-fragment was detected to concentrations as low as 5 pM using the fluidic measurement approach.

  2. The effects of fabrication temperature on current-voltage characteristics and energy efficiencies of quantum dot sensitized ZnOH-GO hybrid solar cells

    SciTech Connect (OSTI)

    Islam, S. M. Z.; Gayen, Taposh; Tint, Naing; Alfano, Robert; Shi, Lingyan; Seredych, Mykola; Bandosz, Teresa J.

    2014-11-07

    The effects of fabrication temperature are investigated on the performance of CdSe quantum dot (QD)-sensitized hybrid solar cells of the composite material of zinc (hydr)oxide (ZnOH-GO)with 2?wt.?% graphite oxide. The current-voltage (I-V) and photo-current measurements show that higher fabrication temperatures yield greater photovoltaic power conversion efficiencies that essentially indicate more efficient solar cells. Two Photon Fluorescence images show the effects of temperature on the internal morphologies of the solar devices based on such materials. The CdSe-QD sensitized ZnOH-GO hybrid solar cells fabricated at 450?C showing conversion of ?10.60% under a tungsten lamp (12.1 mW/cm{sup 2}) are reported here, while using potassium iodide as an electrolyte. The output photocurrent, I (?A) with input power, P (mW/cm{sup 2}) is found to be superlinear, showing a relation of I?=?P{sup n}, where n?=?1.4.

  3. Synchrotron X-ray 2D and 3D Elemental Imaging of CdSe/ZnS Quantum dot Nanoparticles in Daphnia Magna

    SciTech Connect (OSTI)

    Jackson, B.; Pace, H; Lanzirotti, A; Smith, R; Ranville, J

    2009-01-01

    The potential toxicity of nanoparticles to aquatic organisms is of interest given that increased commercialization will inevitably lead to some instances of inadvertent environmental exposures. Cadmium selenide quantum dots (QDs) capped with zinc sulfide are used in the semiconductor industry and in cellular imaging. Their small size (<10 nm) suggests that they may be readily assimilated by exposed organisms. We exposed Daphnia magna to both red and green QDs and used synchrotron X-ray fluorescence to study the distribution of Zn and Se in the organism over a time period of 36 h. The QDs appeared to be confined to the gut, and there was no evidence of further assimilation into the organism. Zinc and Se fluorescence signals were highly correlated, suggesting that the QDs had not dissolved to any extent. There was no apparent difference between red or green QDs, i.e., there was no effect of QD size. 3D tomography confirmed that the QDs were exclusively in the gut area of the organism. It is possible that the QDs aggregated and were therefore too large to cross the gut wall.

  4. Understanding the electronic structure of CdSe quantum dot-fullerene (C{sub 60}) hybrid nanostructure for photovoltaic applications

    SciTech Connect (OSTI)

    Sarkar, Sunandan; Rajbanshi, Biplab; Sarkar, Pranab

    2014-09-21

    By using the density-functional tight binding method, we studied the electronic structure of CdSe quantum dot(QD)-buckminsterfullerene (C{sub 60}) hybrid systems as a function of both the size of the QD and concentration of the fullerene molecule. Our calculation reveals that the lowest unoccupied molecular orbital energy level of the hybrid CdSeQD-C{sub 60} systems lies on the fullerene moiety, whereas the highest occupied molecular orbital (HOMO) energy level lies either on the QD or the fullerene depending on size of the CdSe QD. We explored the possibility of engineering the energy level alignment by varying the size of the CdSe QD. With increase in size of the QD, the HOMO level is shifted upward and crosses the HOMO level of the C{sub 60}-thiol molecule resulting transition from the type-I to type-II band energy alignment. The density of states and charge density plot support these types of band gap engineering of the CdSe-C{sub 60} hybrid systems. This type II band alignment indicates the possibility of application of this nanohybrid for photovoltaic purpose.

  5. Two-state theory of binned photon statistics for a large class of waiting time distributions and its application to quantum dot blinking

    SciTech Connect (OSTI)

    Volkn-Kacs, Sndor

    2014-06-14

    A theoretical method is proposed for the calculation of the photon counting probability distribution during a bin time. Two-state fluorescence and steady excitation are assumed. A key feature is a kinetic scheme that allows for an extensive class of stochastic waiting time distribution functions, including power laws, expanded as a sum of weighted decaying exponentials. The solution is analytic in certain conditions, and an exact and simple expression is found for the integral contribution of bright and dark states. As an application for power law kinetics, theoretical results are compared with experimental intensity histograms from a number of blinking CdSe/ZnS quantum dots. The histograms are consistent with distributions of intensity states around a bright and a dark maximum. A gap of states is also revealed in the more-or-less flat inter-peak region. The slope and to some extent the flatness of the inter-peak feature are found to be sensitive to the power-law exponents. Possible models consistent with these findings are discussed, such as the combination of multiple charging and fluctuating non-radiative channels or the multiple recombination center model. A fitting of the latter to experiment provides constraints on the interaction parameter between the recombination centers. Further extensions and applications of the photon counting theory are also discussed.

  6. ZnCuInS/ZnSe/ZnS Quantum Dot-Based Downconversion Light-Emitting Diodes and Their Thermal Effect

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Wenyan; Zhang, Yu; Ruan, Cheng; Wang, Dan; Zhang, Tieqiang; Feng, Yi; Gao, Wenzhu; Yin, Jingzhi; Wang, Yiding; Riley, Alexis P.; et al

    2015-01-01

    The quantum dot-based light-emitting diodes (QD-LEDs) were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half maximum (FWHM), and power efficiency (PE). The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed little due to themore » low emission temperature coefficients of 0.022, 0.050, and 0.068 nm/°C for red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. These indicate that ZnCuInS/ZnSe/ZnS QDs are more suitable for downconversion LEDs compared to CdSe QDs.« less

  7. Co-sensitization of ZnO by CdS quantum dots in natural dye-sensitized solar cells with polymeric electrolytes to improve the cell stability

    SciTech Connect (OSTI)

    Junhom, W.; Magaraphan, R.

    2015-05-22

    The CdS quantum dots (QDs) were deposited on ZnO layer by chemical bath deposition method to absorb light in the shorter wavelength region and used as photoanode in the dye sensitized solar cell (DSSCs) with natural dye extracted from Noni leaves. Microstructures of CdS-ZnO from various dipping time were characterized by XRD, FE-SEM and EDX. The results showed that the CdS is hexagonal structure and the amount of CdS increases when the dipping time increases. The maximal conversion efficiency of 0.292% was achieved by the DSSCs based on CdS QDs-sensitized ZnO film obtained from 9 min-dipping time. Furthermore, the stability of DSSCs was improved by using polymeric electrolyte. Poly (acrylic acid) (PAA) and Polyacrylamide (PAM) were introduced to CdS QDs-sensitized ZnO film from 9 min-dipping time. Each polymeric electrolyte was prepared by swelling from 0.1-2.0 %w in H2O. The maximal conversion efficiency of 0.207% was achieved for DSSCs based on CdS QDs-sensitized ZnO film with PAM 1.0% and the conversion efficiency was decreased 25% when it was left for1 hr.

  8. Cd{sub 1−x}Mn{sub x}Te ultrasmall quantum dots growth in a silicate glass matrix by the fusion method

    SciTech Connect (OSTI)

    Dantas, Noelio Oliveira; Lima Fernandes, Guilherme de; Almeida Silva, Anielle Christine; Baffa, Oswaldo; Gómez, Jorge Antônio

    2014-09-29

    In this study, we synthesized Cd{sub 1−x}Mn{sub x}Te ultrasmall quantum dots (USQDs) in SiO{sub 2}-Na{sub 2}CO{sub 3}-Al{sub 2}O{sub 3}-B{sub 2}O{sub 3} glass system using the fusion method. Growth of these Cd{sub 1−x}Mn{sub x}Te USQDs was confirmed by optical absorption, atomic force microscopy (AFM), magnetic force microscopy (MFM), scanning transmission electron microscopy (TEM), and electron paramagnetic resonance (EPR) measurements. The blueshift of absorption transition with increasing manganese concentration gives evidence of incorporation of manganese ions (Mn{sup 2+}) in CdTe USQDs. AFM, TEM, and MFM confirmed, respectively, the formation of high quality Cd{sub 1−x}Mn{sub x}Te USQDs with uniformly distributed size and magnetic phases. Furthermore, EPR spectra showed six lines associated to the S = 5/2 spin half-filled d-state, characteristic of Mn{sup 2+}, and confirmed that Mn{sup 2+} are located in the sites core and surface of the CdTe USQD. Therefore, synthesis of high quality Cd{sub 1−x}Mn{sub x}Te USQDs may allow the control of optical and magnetic properties.

  9. Influence of As{sub 4} flux on the growth kinetics, structure, and optical properties of InAs/GaAs quantum dots

    SciTech Connect (OSTI)

    Garcia, A.; Mateo, C. M.; Defensor, M.; Salvador, A.; Hui, H. K.; Boothroyd, C. B.; Philpott, E.

    2007-10-01

    We report the effects of variations in As{sub 4} growth flux on the evolution of molecular beam epitaxy grown InAs quantum dots (QDs) and their structures and optical properties. For InAs QDs grown under As-stable conditions, evaluated through photoluminescence and atomic force microscopy (AFM) measurements, it is evident that QD size increases with As{sub 4} pressure along with improvement in size uniformity. Furthermore, transmission electron microscopy measurements for InAs layers of critical thicknesses ({approx}1.7 ML) showed decreasing QD density with increasing As{sub 4} pressure accompanied by a strong reduction in photoluminescence (PL) integral intensity. These show that high As{sub 4} fluxes suppress InAs QD formation while the decreasing PL intensity seems to indicate cluster formation that features nonradiative recombination. AFM measurements show larger and denser QDs for samples grown at higher As{sub 4} pressures. These are explained on the basis of adatom condensation during surface cooling and the influence of As{sub 4} pressure on indium incorporation.

  10. Enhancement of current collection in epitaxial lift-off InAs/GaAs quantum dot thin film solar cell and concentrated photovoltaic study

    SciTech Connect (OSTI)

    Sogabe, Tomah Shoji, Yasushi; Tamayo, Efrain; Okada, Yoshitaka; Mulder, Peter; Schermer, John

    2014-09-15

    We report the fabrication of a thin film InAs/GaAs quantum dot solar cell (QD cell) by applying epitaxial lift-off (ELO) approach to the GaAs substrate. We confirmed significant current collection enhancement (?0.91?mA/cm{sup 2}) in the ELO-InAs QD cell within the wavelength range of 700?nm900?nm when compared to the ELO-GaAs control cell. This is almost six times of the sub-GaAs bandgap current collection (?0.16?mA/cm{sup 2}) from the wavelength range of 900?nm and beyond, we also confirmed the ELO induced resonance cavity effect was able to increase the solar cell efficiency by increasing both the short circuit current and open voltage. The electric field intensity of the resonance cavity formed in the ELO film between the Au back reflector and the GaAs front contact layer was analyzed in detail by finite-differential time-domain (FDTD) simulation. We found that the calculated current collection enhancement within the wavelength range of 700?nm900?nm was strongly influenced by the size and shape of InAs QD. In addition, we performed concentrated light photovoltaic study and analyzed the effect of intermediate states on the open voltage under varied concentrated light intensity for the ELO-InAs QD cell.

  11. Improving PbS Quantum Dot Solar Cell Power Conversion Efficiency to an NREL-Certified 4.4% (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-01-01

    Transition metal oxide improves overall efficiency and maintains performance with inexpensive metals. A research team at the National Renewable Energy Laboratory (NREL) has demonstrated that inserting a transition metal oxide (TMO) between the lead sulfide (PbS) quantum dot (QD) layer and the metal electrode eliminates the Schottky barrier that impedes efficient hole extraction and thereby improves the overall conversion efficiency. This allows for inexpensive metals such as Al to be employed without loss of performance. n-type TMOs consisting of molybdenum oxide (MoO{sub x}) and vanadium oxide (V{sub 2}O{sub x}) were used as an efficient hole extraction layer (HEL) in heterojunction ZnO/PbS QD solar cells. A 4.4% NREL-certified device was reported based on the MoO{sub x} HEL with Al as the back contact material, representing a more than 65% efficiency improvement compared with the case of Au contacting the PbS QD layer directly. The team finds the acting mechanism of the HEL to be a dipole formed at the MoO{sub x} and PbS interface, which enhances band bending to allow efficient hole extraction from the valence band of the PbS layer by MoO{sub x}. The carrier transport to the metal anode is likely enhanced through shallow gap states in the MoO{sub x} layer.

  12. Green emitting phosphors and blends thereof

    DOE Patents [OSTI]

    Setlur, Anant Achyut; Siclovan, Oltea Puica; Nammalwar, Prasanth Kumar; Sathyanarayan, Ramesh Rao; Porob, Digamber G.; Chandran, Ramachandran Gopi; Heward, William Jordan; Radkov, Emil Vergilov; Briel, Linda Jane Valyou

    2010-12-28

    Phosphor compositions, blends thereof and light emitting devices including white light emitting LED based devices, and backlights, based on such phosphor compositions. The devices include a light source and a phosphor material as described. Also disclosed are phosphor blends including such a phosphor and devices made therefrom.

  13. Blue light emitting thiogallate phosphor

    DOE Patents [OSTI]

    Dye, Robert C.; Smith, David C.; King, Christopher N.; Tuenge, Richard T.

    1998-01-01

    A crystalline blue emitting thiogallate phosphor of the formula RGa.sub.2 S.sub.4 :Ce.sub.x where R is selected from the group consisting of calcium, strontium, barium and zinc, and x is from about 1 to 10 atomic percent, the phosphor characterized as having a crystalline microstructure on the size order of from about 100 .ANG. to about 10,000 .ANG. is provided together with a process of preparing a crystalline blue emitting thiogallate phosphor by depositing on a substrate by CVD and resultant thin film electroluminescent devices including a layer of such deposited phosphor on an ordinary glass substrate.

  14. Structural, morphological, and magnetic characterization of In{sub 1-x}Mn{sub x}As quantum dots grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Ferri, F. A.; Marega, E. Jr.; Coelho, L. N.; Kunets, V. P.; Salamo, G. J.

    2012-08-01

    In this paper, we present a method to order low temperature (LT) self-assembled ferromagnetic In{sub 1-x}Mn{sub x}As quantum dots (QDs) grown by molecular beam epitaxy (MBE). The ordered In{sub 1-x}Mn{sub x}As QDs were grown on top of a non-magnetic In{sub 0.4}Ga{sub 0.6}As/GaAs(100) QDs multi-layered structure. The modulation of the chemical potential, due to the stacking, provides a nucleation center for the LT In{sub 1-x}Mn{sub x}As QDs. For particular conditions, such as surface morphology and growth conditions, the In{sub 1-x}Mn{sub x}As QDs align along lines like chains. This work also reports the characterization of QDs grown on plain GaAs(100) substrates, as well as of the ordered structures, as function of Mn content and growth temperature. The substitutional Mn incorporation in the InAs lattice and the conditions for obtaining coherent and incoherent structures are discussed from comparison between Raman spectroscopy and x-ray analysis. Ferromagnetic behavior was observed for all structures at 2 K. We found that the magnetic moment axis changes from [110] in In{sub 1-x}Mn{sub x}As over GaAs to [1-10] for the ordered In{sub 1-x}Mn{sub x}As grown over GaAs template.

  15. Effect of spacer layer thickness on multi-stacked InGaAs quantum dots grown on GaAs (311)B substrate for application to intermediate band solar cells

    SciTech Connect (OSTI)

    Shoji, Yasushi; Narahara, Kohei; Okada, Yoshitaka; Tanaka, Hideharu; Kita, Takashi; Akimoto, Katsuhiro

    2012-04-01

    We have investigated the properties of multi-stacked layers of self-organized In{sub 0.4}Ga{sub 0.6}As quantum dots (QDs) on GaAs (311)B grown by molecular beam epitaxy. We found that a high degree of in-plane ordering of QDs structure with a six-fold symmetry was maintained though the growth has been performed at a higher growth rate than the conventional conditions. The dependence of photoluminescence characteristics on spacer layer thickness showed an increasing degree of electronic coupling between the stacked QDs for thinner spacer layers. The external quantum efficiency for an InGaAs/GaAs quantum dot solar cell (QDSC) with a thin spacer layer thickness increased in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. Furthermore, a photocurrent production by 2-step photon absorption has been observed at room temperature for the InGaAs/GaAs QDSC with a spacer layer thickness of 15 nm.

  16. Interband emission energy in wurtzite GaN/Ga{sub 0.8}Al{sub 0.2}N and ZnO/ Zn{sub 0.607}Mg{sub 0.393}O strained quantum dots

    SciTech Connect (OSTI)

    Minimala, N. S.; Peter, A. John

    2014-04-24

    The effects of geometrical confinement on the exciton binding energies and thereby the interband emission energy are investigated in wurtzite /Ga{sub 0.8}Al{sub 0.2}N and ZnO/ Zn{sub 0.607}Mg{sub 0.393}O quantum dots taking into account the geometrical confinement. The calculations are performed with the same barrier height of both the materials. The effects of strain and the internal electric field, induced by spontaneous and piezoelectric polarization, are taken into consideration in all the calculations.

  17. Formation of self-organized quantum dot structures and quasi-perfect CuPt-type ordering by gas-source MBE growth of (GaP){sub n}(InP){sub n} superlattices

    SciTech Connect (OSTI)

    Kim, S.J.; Asahi, H.; Takemoto, M.; Asami, K.; Takeuchi, M.; Gonda, S.

    1996-12-31

    (GaP){sub n}(InP){sub n} short period superlattices (SLs) are grown on GaAs(N11) substrates by gas-source MBE. Transmission electron microscopy observations show that the SLs grown on GaAs(311)A and (411)A have dot structures with a size of about 10--20nm. Photoluminescence (PL) peak energies are greatly dependent on substrate orientation and monolayer number n. On the other hand, the (GaP){sub 1}(InP){sub 1} SLs grown on (111) have no composition modulation and have quasi-perfect CuPt-type ordering along the [111] growth direction. The PL peak energy is 321 meV lower than that of disordered InGaP alloy. Self-organized (GaP){sub n}(InP){sub m} SL(dot/barrier)/In{sub 0.49}Ga{sub 0.51}P(barrier) quantum dot structures exhibit strong 77K PL with a full width at half maximum of about 70 meV.

  18. Micro-electro-mechanical systems phosphoric acid fuel cell

    DOE Patents [OSTI]

    Sopchak, David A.; Morse, Jeffrey D.; Upadhye, Ravindra S.; Kotovsky, Jack; Graff, Robert T.

    2010-08-17

    A phosphoric acid fuel cell system comprising a porous electrolyte support, a phosphoric acid electrolyte in the porous electrolyte support, a cathode electrode contacting the phosphoric acid electrolyte, and an anode electrode contacting the phosphoric acid electrolyte.

  19. Micro-electro-mechanical systems phosphoric acid fuel cell

    DOE Patents [OSTI]

    Sopchak, David A.; Morse, Jeffrey D.; Upadhye, Ravindra S.; Kotovsky, Jack; Graff, Robert T.

    2010-12-21

    A phosphoric acid fuel cell system comprising a porous electrolyte support, a phosphoric acid electrolyte in the porous electrolyte support, a cathode electrode contacting the phosphoric acid electrolyte, and an anode electrode contacting the phosphoric acid electrolyte.

  20. Phosphors for near UV-Emitting LED's for Efficacious Generation of White Light

    SciTech Connect (OSTI)

    McKittrick, Joanna

    2013-09-30

    1) We studied phosphors for near-UV (nUV) LED application as an alternative to blue LEDs currently being used in SSL systems. We have shown that nUV light sources could be very efficient at high current and will have significantly less binning at both the chip and phosphor levels. We identified phosphor blends that could yield 4100K lamps with a CRI of approximately 80 and LPWnUV,opt equal to 179 for the best performing phosphor blend. Considering the fact that the lamps were not optimized for light coupling, the results are quite impressive. The main bottleneck is an optimum blue phosphor with a peak near 440 nm with a full width half maximum of about 25 nm and a quantum efficiency of >95%. Unfortunately, that may be a very difficult task when we want to excite a phosphor at ~400 nm with a very small margin for Stokes shift. Another way is to have all the phosphors in the blend having the excitation peak at 400 nm or slightly shorter wavelength. This could lead to a white light source with no body color and optimum efficacy due to no self-absorption effects by phosphors in the blend. This is even harder than finding an ideal blue phosphor, but not necessarily impossible. 2) With the phosphor blends identified, light sources using nUV LEDs at high current could be designed with comparable efficacy to those using blue LEDs. It will allow us to design light sources with multiple wattages using the same chips and phosphor blends simply by varying the input current. In the case of blue LEDs, this is not currently possible because varying the current will lower the efficacy at high current and alter the color point. With improvement of phosphor blends, control over CRI could improve. Less binning at the chip level and also at the phosphor blend level could reduce the cost of SSL light sources. 3) This study provided a deeper understanding of phosphor characteristics needed for LEDs in general and nUV LEDs in particular. Two students received Ph.D. degrees and three

  1. Oxycarbonitride phosphors and light emitting devices using the same

    DOE Patents [OSTI]

    Li, Yuanqiang; Romanelli, Michael D.; Tian, Yongchi

    2015-12-22

    A family of oxycarbonitride phosphor compositions is provided. Also provided are light emitting devices incorporating the oxycarbonitride phosphor compositions.

  2. UltraDots Inc formely UltraPhotonics | Open Energy Information

    Open Energy Info (EERE)

    ) Place: Fremont, California Zip: CA 94539 Product: Nanotechnology company developing "quantum dot" technology for a range of energy, communications and medical applications....

  3. Thin-layer black phosphorous/GaAs heterojunction p-n diodes

    SciTech Connect (OSTI)

    Gehring, Pascal; Urcuyo, Roberto; Duong, Dinh Loc; Burghard, Marko; Kern, Klaus

    2015-06-08

    Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorous emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction diodes wherein thin black phosphorous layers are interfaced with an underlying, highly n-doped GaAs substrate. The p-n heterojunctions exhibit close-to-ideal diode behavior at low bias, while under illumination they display a photoresponse that is evenly distributed over the entire junction area, with an external quantum efficiency of up to 10% at zero bias. Moreover, the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorous sheet with a thickness on the order of 10?nm. Further analysis reveals that the device performance is limited by the structural quality of the black phosphorous surface.

  4. Determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer quantum dots via spectral analysis of optical signature of the Aharanov-Bohm excitons

    SciTech Connect (OSTI)

    Ji, Haojie; Dhomkar, Siddharth; Roy, Bidisha; Kuskovsky, Igor L.; Shuvayev, Vladimir; Deligiannakis, Vasilios; Tamargo, Maria C.; Ludwig, Jonathan; Smirnov, Dmitry; Wang, Alice

    2014-10-28

    For submonolayer quantum dot (QD) based photonic devices, size and density of QDs are critical parameters, the probing of which requires indirect methods. We report the determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer QDs, based on spectral analysis of the optical signature of Aharanov-Bohm (AB) excitons, complemented by photoluminescence studies, secondary-ion mass spectroscopy, and numerical calculations. Numerical calculations are employed to determine the AB transition magnetic field as a function of the type-II QD radius. The study of four samples grown with different tellurium fluxes shows that the lateral size of QDs increases by just 50%, even though tellurium concentration increases 25-fold. Detailed spectral analysis of the emission of the AB exciton shows that the QD radii take on only certain values due to vertical correlation and the stacked nature of the QDs.

  5. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  6. One step, microwave assisted green synthesis of biocompatible carbon quantum dots and their composites with [α−PW{sub 12}O{sub 40}{sup 3−}] for visible light photocatalysis

    SciTech Connect (OSTI)

    Sahasrabudhe, Atharva Pant, Shashank Chatti, Manjunath Maiti, Binoy De, Priyadarsi Roy, Soumyajit

    2014-04-24

    We report a simple, rapid and green route for synthesis of fluorescent carbon quantum dots (CQDs) by microwave assisted pyrolysis method using polyleucine polymer (Boc-L-Leu-HEMA) as precursor and self-passivating agent. The as synthesized CQDs were found to possess low cytotoxicity, thus making them suitable candidates for bioimaging and bio-labelling. Moreover, nanocomposites of as prepared CQDs with [α−PW{sub 12}O{sub 40}{sup 3−}] polyoxometalate were synthesized and were shown to possess excellent photocatalytic properties under visible light towards degradation of organic dye pollutants. Based on the control experiments, a suitable mechanism has been proposed to explain the remarkable photoactivity of the CQD/[α−PW{sub 12}O{sub 40}{sup 3−}] composites.

  7. Development of Advanced LED Phosphors by Spray-based Processes for Solid State Lighting

    SciTech Connect (OSTI)

    Cabot Corporation

    2007-09-30

    are used. This spherical morphology will result in better light extraction and so an improvement of efficiency in the overall device. Cabot is a 2.5 billion dollar company that makes specialized materials using propriety spray based technologies. It is a core competency of Cabot's to exploit the spray based technology and resulting material/morphology advantages. Once a business opportunity is clearly identified, Cabot is positioned to increase the scale of the production to meet opportunity's need. Cabot has demonstrated the capability to make spherical morphology micron-sized phosphor powders by spray based routes for PDP and CRT applications, but the value proposition is still unproven for LED applications. Cabot believes that the improvements in phosphor powders yielded by their process will result in a commercial advantage over existing technologies. Through the SSL project, Cabot has produced a number of different compositions in a spherical morphology that may be useful for solid state lights, as well as demonstrated processes that are able to produce particles from 10 nanometers to 3 micrometers. Towards the end of the project we demonstrated that our process produces YAG:Ce powder that has both higher internal quantum efficiency (0.6 compared to 0.45) and external quantum efficiency (0.85 compared to 0.6) than the commercial standard (see section 3.4.4.3). We, however, only produced these highly bright materials in research and development quantities, and were never able to produce high quantum efficiency materials in a reproducible manner at a commercial scale.

  8. Relativistic Quantum Scars

    SciTech Connect (OSTI)

    Huang, Liang; Lai Yingcheng; Ferry, David K.; Goodnick, Stephen M.; Akis, Richard

    2009-07-31

    The concentrations of wave functions about classical periodic orbits, or quantum scars, are a fundamental phenomenon in physics. An open question is whether scarring can occur in relativistic quantum systems. To address this question, we investigate confinements made of graphene whose classical dynamics are chaotic and find unequivocal evidence of relativistic quantum scars. The scarred states can lead to strong conductance fluctuations in the corresponding open quantum dots via the mechanism of resonant transmission.

  9. Electronic structure descriptor for the discovery of narrow-band red-emitting phosphors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Zhenbin; Chu, Iek -Heng; Zhou, Fei; Ong, Shyue Ping

    2016-05-09

    Narrow-band red-emitting phosphors are a critical component of phosphor-converted light-emitting diodes for highly efficient illumination-grade lighting. In this work, we report the discovery of a quantitative descriptor for narrow-band Eu2+-activated emission identified through a comparison of the electronic structures of known narrow-band and broad-band phosphors. We find that a narrow emission bandwidth is characterized by a large splitting of more than 0.1 eV between the two highest Eu2+ 4f7 bands. By incorporating this descriptor in a high-throughput first-principles screening of 2259 nitride compounds, we identify five promising new nitride hosts for Eu2+-activated red-emitting phosphors that are predicted to exhibit goodmore » chemical stability, thermal quenching resistance, and quantum efficiency, as well as narrow-band emission. Lastly, our findings provide important insights into the emission characteristics of rare-earth activators in phosphor hosts and a general strategy to the discovery of phosphors with a desired emission peak and bandwidth.« less

  10. Phosphors with long-persistent green phosphorescence

    DOE Patents [OSTI]

    Yen, William M; Jia, Weiyi; Lu, Lizhu; Yuan, Huabiao

    2001-01-01

    This invention relates to phosphors including long-persistence green phosphors. Phosphors of the invention are represented by the general formula: M.sub.k Al.sub.2 O.sub.4 :2xEu.sup.2+,2yR.sup.3+ wherein k-1-2x-2y, x is a number ranging from about 0.0001 to about 0.05, y is a number ranging from about x to about 3x, M is an alkaline earth metal, and R.sup.3+ is one or more trivalent metal ions. Phosphors of this invention include powders, ceramics, single crystals and single crystal fibers. A method of manufacturing improved phosphors and a method of manufacturing single crystal phosphors are also provided.

  11. Method and apparatus for reading thermoluminescent phosphors

    DOE Patents [OSTI]

    Braunlich, Peter F.; Tetzlaff, Wolfgang

    1987-01-01

    An apparatus and method for rapidly reading thermoluminescent phosphors to determine the amount of luminescent energy stored therein. The stored luminescent energy is interpreted as a measure of the total exposure of the thermoluminescent phosphor to ionizing radiation. The thermoluminescent phosphor reading apparatus uses a laser to generate a laser beam. The laser beam power level is monitored by a laser power detector and controlled to maintain the power level nearly constant. A shutter or other laser beam interrupting means is used to control exposure of the thermoluminescent phosphor to the laser beam. The laser beam can be equalized using an optical equalizer so that the laser beam has an approximately uniform power density across the beam. The heated thermoluminescent phosphor emits a visible or otherwise detectable luminescent emission which is measured as an indication of the radiation exposure of the thermoluminescent phosphors. Also disclosed are preferred signal processing and control circuits.

  12. Method of preparing a thermoluminescent phosphor

    DOE Patents [OSTI]

    Lasky, Jerome B.; Moran, Paul R.

    1979-01-01

    A thermoluminescent phosphor comprising LiF doped with boron and magnesium is produced by diffusion of boron into a conventional LiF phosphor doped with magnesium. Where the boron dopant is made to penetrate only the outer layer of the phosphor, it can be used to detect shallowly penetrating radiation such as tritium beta ays in the presence of a background of more penetrating radiation.

  13. Exhaust Phosphorous Chemistry and Catalyst Poisoning | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Chemistry and Catalyst Poisoning Exhaust Phosphorous Chemistry and Catalyst Poisoning 2004 Diesel Engine Emissions Reduction (DEER) Conference Presentation: Oak Ridge National ...

  14. Exhaust Phosphorous Chemistry | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    More Documents & Publications Exhaust Phosphorous Chemistry and Catalyst Poisoning The Development of Rapid Aging and Poisoning Protocols for Diesel Aftertreatment Devices Vehicle ...

  15. Lanthanide doped barium phosphorous oxide scintillators

    DOE Patents [OSTI]

    Borade, Ramesh B; Bourret-Courchesne, Edith; Denzo, Stephen E

    2013-02-26

    The present invention provides for a composition comprising an inorganic scintillator comprising a lanthanide-doped barium phosphorous oxide useful for detecting nuclear material.

  16. High Temperature Fuel Cell (Phosphoric Acid) Manufacturing R...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    High Temperature Fuel Cell (Phosphoric Acid) Manufacturing R&D Presented at the NREL ... DC, August 11-12, 2011. PDF icon High Temperature Fuel Cell (Phosphoric Acid) ...

  17. Proposal of high efficiency solar cells with closely stacked InAs/In{sub 0.48}Ga{sub 0.52}P quantum dot superlattices: Analysis of polarized absorption characteristics via intermediateband

    SciTech Connect (OSTI)

    Yoshikawa, H. Kotani, T.; Kuzumoto, Y.; Izumi, M.; Tomomura, Y.; Hamaguchi, C.

    2014-07-07

    We present a theoretical study of the electronic structures and polarized absorption properties of quantum dot superlattices (QDSLs) using widegap matrix material, InAs/In{sub 0.48}Ga{sub 0.52}P QDSLs, for realizing intermediateband solar cells (IBSCs) with twostep photonabsorption. The planewave expanded BurtForeman operator ordered 8band kp theory is used for this calculation, where strain effect and piezoelectric effect are taken into account. We find that the absorption spectra of the second transitions of twostep photonabsorption can be shifted to higher energy region by using In{sub 0.48}Ga{sub 0.52}P, which is latticematched material to GaAs substrate, as a matrix material instead of GaAs. We also find that the transverse magnetic polarized absorption spectra in InAs/In{sub 0.48}Ga{sub 0.52}P QDSL with a separate IB from the rest of the conduction minibands can be shifted to higher energy region by decreasing the QD height. As a result, the second transitions of twostep photonabsorption by the sunlight occur efficiently. These results indicate that InAs/In{sub 0.48}Ga{sub 0.52}P QDSLs are suitable material combination of IBSCs toward the realization of ultrahigh efficiency solar cells.

  18. Formation of linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering and their optical properties

    SciTech Connect (OSTI)

    Sritirawisarn, N.; Otten, F. W. M. van; Eijkemans, T. J.; Noetzel, R.

    2007-09-01

    The formation of linear InAs quantum dot (QD) arrays based on self-organized anisotropic strain engineering of an InGaAsP/InP (100) superlattice (SL) template in chemical beam epitaxy is demonstrated, and the optimized growth window is determined. InAs QD formation, thin InGaAsP capping, annealing, InGaAsP overgrowth, and stacking in SL template formation produce wirelike InAs structures along [001] due to anisotropic surface migration and lateral and vertical strain correlations. InAs QD ordering is governed by the corresponding lateral strain field modulation on the SL template surface. Careful optimization of InGaAsP cap layer thickness, annealing temperature, InAs amount and growth rate, and number of SL periods results in straight and well-separated InAs QD arrays. The InAs QD arrays exhibit excellent photoluminescence (PL) emission up to room temperature which is tuned into the 1.55 {mu}m telecommunications wavelength region through the insertion of ultrathin GaAs interlayers. Temperature dependent PL measurements and the linear polarization behavior indicate lateral electronic coupling of the QDs in the arrays.

  19. Investigation of single-layer/multilayer self-assembled InAs quantum dots on GaAs{sub 1-x}Sb{sub x}/GaAs composite substrates

    SciTech Connect (OSTI)

    Tang, Dinghao; Kim, Yeongho Faleev, Nikolai; Honsberg, Christiana B.; Smith, David J.

    2015-09-07

    The structure-performance properties of single-layered and multi-layered InAs/GaAs{sub 1−x}Sb{sub x} quantum dot (QD) system, grown by molecular beam epitaxy on GaAs (001) substrates, have been investigated as a function of Sb concentration. Electron microscopy observations showed no significant crystalline defects for the single-layered InAs QDs (Sb 20%). X-ray diffraction analysis revealed that the increase of Sb concentration from 7.3% to 10.2% for the multi-layered QDs increased the strain relaxation from 0% to ∼23% and the dislocation density of GaAsSb layers went up to 3.6 × 10{sup 9 }cm{sup −2}. The peak energy of QD luminescence was red-shifted with increasing Sb concentration due to reduced strain inside QDs. Moreover, the carrier lifetime of the QDs was highly improved from 1.7 to 36.7 ns due to weak hole confinement as the Sb concentration was increased from 7.3% to 10.2%. These structures should be highly promising as the basis for photovoltaic solar-cell applications. Finally, the increased Sb concentration increased the thermal activation energy of electrons confined in the QDs from 163.7 to 206.8 meV, which was indicative of the improved thermal stability with Sb concentration.

  20. Boron doped Si rich oxide/SiO{sub 2} and silicon rich nitride/SiN{sub x} bilayers on molybdenum-fused silica substrates for vertically structured Si quantum dot solar cells

    SciTech Connect (OSTI)

    Lin, Ziyun Wu, Lingfeng; Jia, Xuguang; Zhang, Tian; Puthen-Veettil, Binesh; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan

    2015-07-28

    Vertically structured Si quantum dots (QDs) solar cells with molybdenum (Mo) interlayer on quartz substrates would overcome current crowding effects found in mesa-structured cells. This study investigates the compatibility between boron (B) doped Si QDs bilayers and Mo-fused silica substrate. Both Si/SiO{sub 2} and Si/SiN{sub x} based QDs bilayers were studied. The material compatibility under high temperature treatment was assessed by examining Si crystallinity, microstress, thin film adhesion, and Mo oxidation. It was observed that the presence of Mo interlayer enhanced the Si QDs size confinement, crystalline fraction, and QDs size uniformity. The use of B doping was preferred compared to phosphine (PH{sub 3}) doping studied previously in terms of better surface and interface properties by reducing oxidized spots on the film. Though crack formation due to thermal mismatch after annealing remained, methods to overcome this problem were proposed in this paper. Schematic diagram to fabricate full vertical structured Si QDs solar cells was also suggested.

  1. Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperature

    SciTech Connect (OSTI)

    Shah, S.; Ghosh, K.; Jejurikar, S.; Mishra, A.; Chakrabarti, S.

    2013-08-01

    Graphical abstract: - Highlights: Investigation of ground state energy in single and multi-layered InAs/GaAs QD. Strain reducing layer (InGaAs) prevents the formation of non-radiative. Strain reducing layer (InGaAs) is responsible for high activation energy. Significant deviation from the Varshni model, E(T) = E ? ?T{sup 2}/T + ?. - Abstract: Vertically coupled, multilayered InAs/GaAs quantum dots (QDs) covered with thin InGaAs strain-reducing layers (SRLs) are in demand for various technological applications. We investigated low temperature photoluminescence of single and multilayered structures in which the SRL thickness was varied. The SRL layer was responsible for high activation energies. Deviation of experimental data from the Varshni (1967) model, E(T) = E ? ? T{sup 2}/T + ?, suggests that the InAs-layered QDs have properties different from those in bulk material. Anomalous ground-state peak linewidths (FWHM), especially for annealed multilayer structures, were observed. A ground-state peak blue-shift with a broadened linewidth was also observed. Loss of intensity was detected in samples annealed at 800 C. Presence of SRLs prevents formation of non-radiative centers under high temperature annealing. The results indicate the potential importance of such structures in optoelectronic applications.

  2. Photovoltaic Cell Quantum Efficiency Basics | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... shines through a sample of transparent material containing quantum dots, tiny nanoparticles that can be used to harness solar energy for electricity. | Photo courtesy of LANL. ...

  3. Development of Efficient UV-LED Phosphor Coatings for Energy Saving Solid State Lighting

    SciTech Connect (OSTI)

    Uwe Happek

    2006-05-15

    The University of Georgia, in collaboration with GE Global Research, has investigated the relevant quenching mechanism of phosphor coatings used in white light devices based on UV LEDs. The final goal of the project was the design and fabrication of a high-efficacy white light UV-LED device through improved geometry and optimized phosphor coatings. At the end of the research period, which was extended to seamlessly carry over the research to a follow-up program, we have demonstrated a two-fold improvement in the conversion efficiency of a white light LED device, where the increase efficacy is due to both improved phosphor quantum efficiency and lamp geometry. Working prototypes have been displayed at DOE sponsored meetings and during the final presentation at the DOE Headquarters in Washington, DC. During the first phase of the project, a fundamental understanding of quenching processes in UV-LEDs was obtained, and the relationships that describe the performance of the phosphor as a function of photon flux, temperature, and phosphor composition were established. In the second phase of the project, these findings were then implemented to design the improved UV-LED lamp. In addition, our research provides a road map for the design of efficient white light LEDs, which will be an important asset during a follow-up project led by GE.

  4. VolmerWeber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

    SciTech Connect (OSTI)

    Zhao, Yu Bertru, Nicolas; Folliot, Herv; Rohel, Tony; Mauger, Samuel J. C.; Koenraad, Paul M.

    2014-07-21

    We report on Sb surfactant growth of InAs nanostructures on GaAs{sub 0.51}Sb{sub 0.49} layers deposited on InP (001) and on (113)B oriented substrates. On the (001) orientation, the presence of Sb significantly favors the two-dimensional growth regime. Even after the deposition of 5 mono-layers of InAs, the epitaxial film remains flat and InAs/GaAs{sub 0.51}Sb{sub 0.49} type-II quantum wells are achieved. On (113)B substrates, same growth runs resulted in formation of high density InAs islands. Microscopic studies show that wetting layer is missing on (113)B substrates, and thus, a Volmer-Weber growth mode is concluded. These different behaviors are attributed to the surface energy changes induced by Sb atoms on surface.

  5. Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same

    DOE Patents [OSTI]

    Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani

    2006-04-04

    Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

  6. Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same

    DOE Patents [OSTI]

    Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani; Manivannan, Venkatesan

    2004-07-13

    Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

  7. X-ray image intensifier phosphor

    DOE Patents [OSTI]

    D'Silva, A.P.; Fassel, V.A.

    1975-12-01

    Y/sub 1-x/Gd/sub x/.PO$sub 4$:Tb$sup 3+$ is an effective phosphor for use in X-ray intensifier screens and in nuclear radiation detection systems.

  8. Surfactant addition to phosphoric acid electrolyte

    DOE Patents [OSTI]

    Jackovitz, John F. (Monroeville, PA); Kunkle, Richard P. (Irwin, PA)

    1987-01-01

    A phosphoric acid fuel cell having an improved electrolyte comprising concentrated H.sub.3 PO.sub.4 and at least 0.5 wt. percent lauryl dimethyl amine.

  9. Note on quantum Minkowski space

    SciTech Connect (OSTI)

    Bentalha, Z.; Tahiri, M.

    2008-09-15

    In this work, some interesting details about quantum Minkowski space and quantum Lorentz group structures are revealed. The task is accomplished by generalizing an approach adopted in a previous work where quantum rotation group and quantum Euclidean space structures have been investigated. The generalized method is based on a mapping relating the q-spinors (precisely the tensor product of dotted and undotted fondamental q-spinors) to Minkowski q-vectors. As a result of this mapping, the quantum analog of Minkowski space is constructed (with a definite metric). Also, the matrix representation of the quantum Lorentz group is determined together with its corresponding q-deformed orthogonality relation.

  10. Fluorescent lighting with aluminum nitride phosphors

    DOE Patents [OSTI]

    Cherepy, Nerine J.; Payne, Stephen A.; Seeley, Zachary M.; Srivastava, Alok M.

    2016-05-10

    A fluorescent lamp includes a glass envelope; at least two electrodes connected to the glass envelope; mercury vapor and an inert gas within the glass envelope; and a phosphor within the glass envelope, wherein the phosphor blend includes aluminum nitride. The phosphor may be a wurtzite (hexagonal) crystalline structure Al.sub.(1-x)M.sub.xN phosphor, where M may be drawn from beryllium, magnesium, calcium, strontium, barium, zinc, scandium, yttrium, lanthanum, cerium, praseodymium, europium, gadolinium, terbium, ytterbium, bismuth, manganese, silicon, germanium, tin, boron, or gallium is synthesized to include dopants to control its luminescence under ultraviolet excitation. The disclosed Al.sub.(1-x)M.sub.xN:Mn phosphor provides bright orange-red emission, comparable in efficiency and spectrum to that of the standard orange-red phosphor used in fluorescent lighting, Y.sub.2O.sub.3:Eu. Furthermore, it offers excellent lumen maintenance in a fluorescent lamp, and does not utilize "critical rare earths," minimizing sensitivity to fluctuating market prices for the rare earth elements.

  11. Towards bulk based preconditioning for quantum dotcomputations

    SciTech Connect (OSTI)

    Dongarra, Jack; Langou, Julien; Tomov, Stanimire; Channing,Andrew; Marques, Osni; Vomel, Christof; Wang, Lin-Wang

    2006-05-25

    This article describes how to accelerate the convergence of Preconditioned Conjugate Gradient (PCG) type eigensolvers for the computation of several states around the band gap of colloidal quantum dots. Our new approach uses the Hamiltonian from the bulk materials constituent for the quantum dot to design an efficient preconditioner for the folded spectrum PCG method. The technique described shows promising results when applied to CdSe quantum dot model problems. We show a decrease in the number of iteration steps by at least a factor of 4 compared to the previously used diagonal preconditioner.

  12. Fluorescent and cathodoluminescent phosphors structurally related to sodalite

    DOE Patents [OSTI]

    Phillips, M.L.F.; Shea, L.E.

    1998-09-29

    Blue, quantum-confined phosphors are disclosed for field-emission displays made by reducing metal (M) sulfoaluminates at high temperature. This yields phases of the type M{sub 4}(AlO{sub 2}){sub 6}S. Bulk sulfide contaminant mixed with the reduced sulfoaluminate phase is removed by treating it with a chelating agent in nonaqueous solution. A photometric cathodoluminescence efficiency of 9 lumen/watt at 1,000 V for Sr{sub 3}PbS(AlO{sub 2}){sub 6} is observed. Undoped Sr{sub 4}S(AlO){sub 6} displays 5 lumen/watt at 1,000 V, with excellent blue chromatic saturation. 2 figs.

  13. MULTI-PHOTON PHOSPHOR FEASIBILITY RESEARCH

    SciTech Connect (OSTI)

    R. Graham; W. Chow

    2003-05-01

    Development of multi-photon phosphor materials for discharge lamps represents a goal that would achieve up to a doubling of discharge (fluorescent) lamp efficacy. This report reviews the existing literature on multi-photon phosphors, identifies obstacles in developing such phosphors, and recommends directions for future research to address these obstacles. To critically examine issues involved in developing a multi-photon phosphor, the project brought together a team of experts from universities, national laboratories, and an industrial lamp manufacturer. Results and findings are organized into three categories: (1) Multi-Photon Systems and Processes, (2) Chemistry and Materials Issues, and (3) Concepts and Models. Multi-Photon Systems and Processes: This category focuses on how to use our current understanding of multi-photon phosphor systems to design new phosphor systems for application in fluorescent lamps. The quickest way to develop multi-photon lamp phosphors lies in finding sensitizer ions for Gd{sup 3+} and identifying activator ions to red shift the blue emission from Pr{sup 3+} due to the {sup 1}S{sub 0} {yields} {sup 1}I{sub 6} transition associated with the first cascading step. Success in either of these developments would lead to more efficient fluorescent lamps. Chemistry and Materials Issues: The most promising multi-photon phosphors are found in fluoride hosts. However, stability of fluorides in environments typically found in fluorescent lamps needs to be greatly improved. Experimental investigation of fluorides in actual lamp environments needs to be undertaken while working on oxide and oxyfluoride alternative systems for backup. Concepts and Models: Successful design of a multi-photon phosphor system based on cascading transitions of Gd{sup 3+} and Pr{sup 3+} depends critically on how the former can be sensitized and the latter can sensitize an activator ion. Methods to predict energy level diagrams and Judd-Ofelt parameters of multi

  14. Phosphor blends for high-CRI fluorescent lamps

    SciTech Connect (OSTI)

    Setlur, Anant Achyut; Srivastava, Alok Mani; Comanzo, Holly Ann; Manivannan, Venkatesan; Beers, William Winder; Toth, Katalin; Balazs, Laszlo D.

    2008-06-24

    A phosphor blend comprises at least two phosphors each selected from one of the groups of phosphors that absorb UV electromagnetic radiation and emit in a region of visible light. The phosphor blend can be applied to a discharge gas radiation source to produce light sources having high color rendering index. A phosphor blend is advantageously includes the phosphor (Tb,Y,LuLa,Gd).sub.x(Al,Ga).sub.yO.sub.12:Ce.sup.3+, wherein x is in the range from about 2.8 to and including 3 and y is in the range from about 4 to and including 5.

  15. Blue-green phosphor for fluorescent lighting applications

    DOE Patents [OSTI]

    Srivastava, Alok; Comanzo, Holly; Manivannan, Venkatesan; Setlur, Anant Achyut

    2005-03-15

    A fluorescent lamp including a phosphor layer including Sr.sub.4 Al.sub.14 O.sub.25 :Eu.sup.2+ (SAE) and at least one of each of a red, green and blue emitting phosphor. The phosphor layer can optionally include an additional, deep red phosphor and a yellow emitting phosphor. The resulting lamp will exhibit a white light having a color rendering index of 90 or higher with a correlated color temperature of from 2500 to 10000 Kelvin. The use of SAE in phosphor blends of lamps results in high CRI light sources with increased stability and acceptable lumen maintenance over, the course of the lamp life.

  16. Bright three-band white light generated from CdSe/ZnSe quantum dot-assisted Sr{sub 3}SiO{sub 5}:Ce{sup 3+},Li{sup +}-based white light-emitting diode with high color rendering index

    SciTech Connect (OSTI)

    Jang, Ho Seong; Kwon, Byoung-Hwa; Jeon, Duk Young; Yang, Heesun

    2009-10-19

    In this study, bright three-band white light was generated from the CdSe/ZnSe quantum dot (QD)-assisted Sr{sub 3}SiO{sub 5}:Ce{sup 3+},Li{sup +}-based white light-emitting diode (WLED). The CdSe/ZnSe core/shell structure was confirmed by energy dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy. The CdSe/ZnSe QDs showed high quantum efficiency (79%) and contributed to the high luminous efficiency ({eta}{sub L}) of the fabricated WLED. The WLED showed bright natural white with excellent color rendering property ({eta}{sub L}=26.8 lm/W, color temperature=6140 K, and color rendering index=85) and high stability against the increase in forward bias currents from 20 to 70 mA.

  17. Color stable manganese-doped phosphors

    DOE Patents [OSTI]

    Lyons, Robert Joseph; Setlur, Anant Achyut; Deshpande, Anirudha Rajendra; Grigorov, Ljudmil Slavchev

    2012-08-28

    A process for preparing color stable Mn.sup.+4 doped phosphors includes providing a phosphor of formula I; A.sub.x[MF.sub.y]:Mn.sup.+4 I and contacting the phosphor in particulate form with a saturated solution of a composition of formula II in aqueous hydrofluoric acid; A.sub.x[MF.sub.y]; II wherein A is Li, Na, K, Rb, Cs, NR.sub.4 or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; R is H, lower alkyl, or a combination thereof; x is the absolute value of the charge of the [MF.sub.y] ion; and y is 5, 6 or 7. In particular embodiments, M is Si, Ge, Sn, Ti, Zr, or a combination thereof. A lighting apparatus capable of emitting white light includes a semiconductor light source; and a phosphor composition radiationally coupled to the light source, and which includes a color stable Mn.sup.+4 doped phosphor.

  18. Color stable manganese-doped phosphors

    DOE Patents [OSTI]

    Lyons, Robert Joseph; Setlur, Anant Achyut; Deshpande, Anirundha Rajendra; Grigorov, Ljudmil Slavchev

    2014-04-29

    A lighting apparatus capable of emitting white light includes a semiconductor light source; and a phosphor material radiationally coupled to the light source. The phosphor material includes a color-stable Mn.sup.+4 doped phosphor prepared by a process including providing a phosphor of formula I; A.sub.x[MF.sub.y]:Mn.sup.+4 I and contacting the phosphor in particulate form with a saturated solution of a composition of formula II in aqueous hydrofluoric acid; A.sub.x[MF.sub.y]; II wherein A is Li, Na, K, Rb, Cs, NR.sub.4 or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; R is H, lower alkyl, or a combination thereof; x is the absolute value of the charge of the [MF.sub.y] ion; and y is 5, 6 or 7. In particular embodiments, M is Si, Ge, Sn, Ti, Zr, or a combination thereof.

  19. Crystalline rare-earth activated oxyorthosilicate phosphor

    DOE Patents [OSTI]

    McClellan, Kenneth J.; Cooke, D. Wayne

    2004-02-10

    Crystalline, transparent, rare-earth activated lutetium oxyorthosilicate phosphor. The phosphor consists essentially of lutetium yttrium oxyorthosilicate activated with a rare-earth metal dopant M and having the general formula Lu(.sub.2-x-z)Y.sub.x M.sub.z SiO.sub.5, wherein 0.00.ltoreq.x.ltoreq.1.95, wherein 0.001.ltoreq.z.ltoreq.0.02, and wherein M is selected from Sm, Tb, Tm, Eu, Yb, and Pr. The phosphor also consists essentially of lutetium gadolinium oxyorthosilicate activated with a rare-earth metal dopant M and having the general formula Lu(.sub.2-x-z)Gd.sub.x M.sub.z SiO.sub.5, wherein 0.00.ltoreq.x.ltoreq.1.95, wherein 0.001.ltoreq.z.ltoreq.0.02, and wherein M is selected from Sm, Tb, Tm, Eu, Yb, and Pr. The phosphor also consists essentially of gadolinium yttrium oxyorthosilicate activated with a rare-earth metal dopant M and having the general formula Gd(.sub.2-x-z)Y.sub.x M.sub.z SiO.sub.5, wherein 0.00.ltoreq.x.ltoreq.1.95, wherein 0.001.ltoreq.z.ltoreq.0.02, and wherein M is selected from Sm, Tb, Tm, Eu, Yb, and Pr. The phosphor may be optically coupled to a photodetector to provide a radiation detector.

  20. PBI-Phosphoric Acid Based Membrane Electrode Assemblies: Status...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PBI-Phosphoric Acid Based Membrane Electrode Assemblies: Status Update PBI-Phosphoric Acid Based Membrane Electrode Assemblies: Status Update Presentation at the MCFC and PAFC R&D ...