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Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Molten iron oxysulfide as a superior sulfur sorbent. Final report, [September 1989--1993  

SciTech Connect (OSTI)

The studies had as original objective the analysis of conditions for using liquid iron oxysulfide as a desulfuring agent during coal gasification. Ancillary was a comparison of iron oxysulfide with lime as sorbents under conditions where lime reacts with S-bearing gases to form Ca sulfate or sulfide. Primary thrust is to determine the thermodynamic requirements for desulfurization by iron additions (e.g., taconite concentrate) during combustion in gasifiers operating at high equivalence ratios. Thermodynamic analysis of lime-oxygen-sulfur system shows why lime is injected into burners under oxidizing conditions; reducing conditions forms CaS, requiring its removal, otherwise oxidation and release of S would occur. Iron as the oxysulfide liquid has a range of stability and can be used as a desulfurizing agent, if the burner/gasifier operates in a sufficiently reducing regime (high equivalence ratio); this operating range is given and is calculable for a coal composition, temperature, stoichiometry. High moisture or hydrogen contents of the coal yield a poorer degree of desulfurization. Kinetic tests on individual iron oxide particles on substrates or Pt cups with a TGA apparatus fail to predict reaction rates within a burner. Preliminary tests on the Dynamic Containment Burner with acetylene give some promise that this system can produce the proper conditions of coal gasification for use of added iron as a sulfur sorbent.

Hepworth, M.T.

1993-03-31T23:59:59.000Z

2

Copper Indium Gallium Diselenide  

Broader source: Energy.gov [DOE]

DOE-sponsored research on copper indium gallium diselenide [Cu(InxGa1-x)Se2], or CIGS, solar cells focuses on developing better film qualities, and thus, higher efficiencies. A list of current...

3

Gallium interactions with Zircaloy  

E-Print Network [OSTI]

of weapons-grade plutonium (WGPu) in the United States is the conversion of weapons-grade plutonium into mixed-oxide (MOX) reactor fuel. MOX fuel fabricated in this way must be compatible with currently used nuclear fuel components. Since US WGPu contains... that gallium may have on zircaloy cladding during reactor operation. As a result of the reprocessing of spent fuel used in European nuclear programs, many studies have been conducted on the production and behavior of MOX fuel in traditional reactors [5...

West, Michael Keith

2012-06-07T23:59:59.000Z

4

Gallium Safety in the Laboratory  

SciTech Connect (OSTI)

A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002.

Lee C. Cadwallader

2003-06-01T23:59:59.000Z

5

Gallium Safety in the Laboratory  

SciTech Connect (OSTI)

A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002.

Cadwallader, L.C.

2003-05-07T23:59:59.000Z

6

Potential effects of gallium on cladding materials  

SciTech Connect (OSTI)

This paper identifies and examines issues concerning the incorporation of gallium in weapons derived plutonium in light water reactor (LWR) MOX fuels. Particular attention is given to the more likely effects of the gallium on the behavior of the cladding material. The chemistry of weapons grade (WG) MOX, including possible consequences of gallium within plutonium agglomerates, was assessed. Based on the calculated oxidation potentials of MOX fuel, the effect that gallium may have on reactions involving fission products and possible impact on cladding performance were postulated. Gallium transport mechanisms are discussed. With an understanding of oxidation potentials and assumptions of mechanisms for gallium transport, possible effects of gallium on corrosion of cladding were evaluated. Potential and unresolved issues and suggested research and development (R and D) required to provide missing information are presented.

Wilson, D.F.; Beahm, E.C.; Besmann, T.M.; DeVan, J.H.; DiStefano, J.R.; Gat, U.; Greene, S.R.; Rittenhouse, P.L.; Worley, B.A.

1997-10-01T23:59:59.000Z

7

P-type gallium nitride  

DOE Patents [OSTI]

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

1997-08-12T23:59:59.000Z

8

P-type gallium nitride  

DOE Patents [OSTI]

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

Rubin, Michael (Berkeley, CA); Newman, Nathan (Montara, CA); Fu, Tracy (Berkeley, CA); Ross, Jennifer (Pleasanton, CA); Chan, James (Berkeley, CA)

1997-01-01T23:59:59.000Z

9

Local environment and composition of magnesium gallium layered...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR Local environment and composition of magnesium gallium...

10

Recovery of gallium from aluminum industry residues  

SciTech Connect (OSTI)

A procedure is proposed to recover gallium from flue dust aluminum residues produced in plants by using solid-phase extraction with a commercial polyether-type polyurethane foam (PUF). Gallium can be separated from high concentrations of aluminum, iron, nickel, titanium, vanadium, copper, zinc, sulfate, fluoride, and chloride by extraction with PUF from 3 M sulfuric acid and 3 M sodium chloride concentration medium with at least a 92% efficiency. Gallium backextraction was fast and quantitative with ethanol solution. In all recovery steps commercial-grade reagents could be used, including tap water. The recovered gallium was precipitated with sodium hydroxide solution, purified by dissolution and precipitation, calcinated, and the final oxide was 98.6% pure.

Carvalho, M.S.; Neto, K.C.M.; Nobrega, A.W.; Medeiros, J.A.

2000-01-01T23:59:59.000Z

11

Au-free Ohmic Contacts to Gallium Nitride and Graphene  

E-Print Network [OSTI]

This work deals with Au-free contact metallization schemes for gallium nitride (GaN) and graphene semiconductors. Graphene and gallium nitride are promising materials that can potentially be integrated together in the near future for high frequency...

Ravikirthi, Pradhyumna

2014-08-10T23:59:59.000Z

12

Characterizing organometallic-vapor-phase-epitaxy-grown indium gallium nitride islands on gallium nitride for light emitting diode applications.  

E-Print Network [OSTI]

??The indium-gallium-nitride on gallium-nitride (InGaN/GaN) materials system is a promising candidate for providing a high intensity, high efficiency solution to the yet unsolved problem of… (more)

Anderson, Kathy Perkins Jenkins

2011-01-01T23:59:59.000Z

13

GALLIUM--2000 30.1 By Deborah A. Kramer  

E-Print Network [OSTI]

the largest application for gallium, with optoelectronic devices [mostly laser diodes and light-use application for gallium, with 63% of total consumption. Optoelectronic devices accounted for 32% of domestic% of the gallium consumed in the United States was in the form of GaAs. GaAs was manufactured into optoelectronic

14

GALLIUM--1998 29.1 By Deborah A. Kramer  

E-Print Network [OSTI]

's) were the largest application for gallium, with optoelectronic devices [mostly laser diodes and light-use application for gallium, with 52% of total consumption. Optoelectronic devices accounted for 45% of domestic% of the gallium consumed in the United States was in the form of GaAs. GaAs was manufactured into optoelectronic

15

GALLIUM--1999 29.1 By Deborah A. Kramer  

E-Print Network [OSTI]

circuits (IC's) were the largest application for gallium, with optoelectronic devices [mostly laser diodes-use application for gallium, with 52% of total consumption. Optoelectronic devices accounted for 42% of domestic% of the gallium consumed in the United States was in the form of GaAs. GaAs was manufactured into optoelectronic

16

Gallium nitride junction field-effect transistor  

DOE Patents [OSTI]

An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

Zolper, John C. (Albuquerque, NM); Shul, Randy J. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

17

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(nanowires) in the compound gallium selenide. In short, ordered lines of structural vacancies in the material stimulate the growth of "one-dimensional" structures less than 1...

18

Photonuclear Reaction Cross Sections for Gallium Isotopes  

E-Print Network [OSTI]

The photon induced reactions which are named as photonuclear reactions have a great importance in many field of nuclear, radiation physics and related fields. Since we have planned to perform photonuclear reaction on gallium target with bremmstrahlung photons from clinical linear accelerator in the future, the cross-sections of neutron (photo-neutron ({\\gamma},xn)) and proton (photo-proton ({\\gamma},xn)) productions after photon activation have been calculated by using TALYS 1.2 computer code in this study. The target nucleus has been considered gallium which has two stable isotopes, 69Ga and 71Ga. According to the results, we have seen that the calculations are in harmony in the limited literature values. Furthermore, the pre-equilibrium and compound process contributions to the total cross-section have been investigated.

Serkan Akkoyun; Tuncay Bayram

2014-09-08T23:59:59.000Z

19

Standard Reference Material 1751: Gallium Melting-Point Standard  

E-Print Network [OSTI]

Standard Reference Material 1751: Gallium Melting-Point Standard Gregory F. Strouse NIST Special Publication 260-157 #12;#12;NIST Special Publication 260-157 XXXX Standard Reference Material 1751: Gallium Melting-Point Standard Gregory F. Strouse Chemical Science and Technology Laboratory Process Measurements

20

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary (crude, unrefined) gallium was recovered in 2013. Globally,  

E-Print Network [OSTI]

% of the gallium consumed was used in integrated circuits (ICs). Optoelectronic devices, which include laser diodes of the remaining gallium consumption. Optoelectronic devices were used in aerospace applications, consumer goods

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

arsenide gallium nitride: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Lundberga,*, J. Lua , A Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been with a larger number of vacancies, that facilitates...

22

Cavity optomechanics in gallium phosphide microdisks  

SciTech Connect (OSTI)

We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors >2.8?×?10{sup 5} and mode volumes <10(?/n){sup 3}, and study their nonlinear and optomechanical properties. For optical intensities up to 8.0?×?10{sup 4} intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5??m and several mechanical resonances, and measure an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g{sub 0}/2??30?kHz for the fundamental mechanical radial breathing mode at 488?MHz.

Mitchell, Matthew; Barclay, Paul E., E-mail: pbarclay@ucalgary.ca [Institute for Quantum Science and Technology, University of Calgary, Calgary, Alberta T2N 1N4 (Canada); National Institute for Nanotechnology, 11421 Saskatchewan Dr. NW, Edmonton, Alberta T6G 2M9 (Canada); Hryciw, Aaron C. [National Institute for Nanotechnology, 11421 Saskatchewan Dr. NW, Edmonton, Alberta T6G 2M9 (Canada)

2014-04-07T23:59:59.000Z

23

Application of ultrasound in solvent extraction of nickel and gallium  

SciTech Connect (OSTI)

The effects of ultrasound on the rate of solvent extraction of nickel with Lix 65N and Lix 70, and gallium with Kelex 100 were investigated. These solvent extraction systems are noted by their sluggish nature. Low frequency (20 kHz) ultrasound increased the rates of extraction of nickel by factors of four to seven. The ultrasound had no effect on the final chemical equilibrium. Gallium extraction rates were enhanced with the use of ultrasound by as much as a factor of 15. Again, the ultrasound had no effect on extraction equilibrium. For both nickel and gallium, the enhanced rates were attributed to increased interfacial surface area associated with ultrasonically induced cavitation and microdroplet formation. The stability of the microdroplets permitted intermittent application of ultrasound with corresponding decreases in ultrasonic energy requirements. The lowest energy consumption was observed with short (0.25 to 5 s) bursts of high power (41 to 61 W) ultrasonic inputs. The study also provided insight into the factors that affect the complex extraction of gallium from sodium aluminate solutions. The rate controlling step was found to be the dehydration of the gallate ion, Ga(OH)4, and the first complex formation between gallium and Kelex 100. Sodium was found to enhance the extraction rate up to a point, beyond which increased concentration was detrimental. Increasing aluminum concentration was found to slow extraction rates. Modifiers and diluents were shown to markedly affect extraction rates even without ultrasound. Ketone modifiers, particularly 2-undecanone, when used with Kermac 470B or Escaid 200 diluents enhanced extraction rates of gallium to the point that the use of ultrasound provided no additional benefits. The positive effects of ketone modifiers for the solvent extraction of gallium had not been previously reported.

Pesic, B.

1996-07-01T23:59:59.000Z

24

Gallium based low-interaction anions  

DOE Patents [OSTI]

The present invention provides: a composition of the formula M.sup.+x (Ga(Y).sub.4.sup.-).sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; a composition of the formula (R).sub.x Q.sup.+ Ga(Y).sub.4.sup.- where Q is selected from the group consisting of carbon, nitrogen, sulfur, phosphorus and oxygen, each R is a ligand selected from the group consisting of alkyl, aryl, and hydrogen, x is an integer selected from the group consisting of 3 and 4 depending upon Q, and each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; an ionic polymerization catalyst composition including an active cationic portion and a gallium based weakly coordinating anion; and bridged anion species of the formula M.sup.+x.sub.y [X(Ga(Y.sub.3).sub.z ].sup.-y.sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, magnesium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, X is a bridging group between two gallium atoms, y is an integer selected from the group consisting 1 and 2, z is an integer of at least 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide.

King, Wayne A. (Santa Fe, NM); Kubas, Gregory J. (Santa Fe, NM)

2000-01-01T23:59:59.000Z

25

Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials  

DOE Patents [OSTI]

Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

Hogan, S.J.

1983-03-13T23:59:59.000Z

26

Interaction of a Liquid Gallium Jet with ISTTOK Edge Plasmas  

SciTech Connect (OSTI)

The use of liquid metals as plasma facing components in tokamaks has recently experienced a renewed interest stimulated by their advantages in the development of a fusion reactor. Liquid metals have been proposed to solve problems related to the erosion and neutronic activation of solid walls submitted to high power loads allowing an efficient heat exhaust from fusion devices. Presently the most promising candidate materials are lithium and gallium. However, lithium has a short liquid state range when compared, for example, with gallium that has essentially better thermal properties and lower vapor pressure. To explore further these properties, ISTTOK tokamak is being used to test the interaction of a free flying, fully formed liquid gallium jet with the plasma. The interacting, 2.3 mm diameter, jet is generated by hydrostatic pressure and has a 2.5 m/s flow velocity. The liquid metal injector has been build to allow the positioning of the jet inside the tokamak chamber, within a 13 mm range. This paper presents the first obtained experimental results concerning the liquid gallium jet-plasma interaction. A stable jet has been obtained, which was not noticeably affected by the magnetic field transients. ISTTOK has been successfully operated with the gallium jet without degradation of the discharge or a significant plasma contamination by liquid metal. This observation is supported by spectroscopic measurements showing that gallium radiation is limited to the region around the jet. Furthermore, the power deposited on the jet has been evaluated at different radial locations and the surface temperature increase estimated.

Gomes, R. B.; Fernandes, H.; Silva, C.; Pereira, T.; Figueiredo, J.; Carvalho, B.; Soares, A.; Duarte, P.; Varandas, C. [Associacao EURATOM/IST, Centro de Fusao Nuclear, Av. Rovisco Pais, 1049-001 Lisboa, Porugal (Portugal); Sarakovskis, A.; Lielausis, O.; Klyukin, A.; Platacis, E.; Tale, I. [Association EURATOM/University of Latvia, Institute of Solid State Physics, 8 Kengaraga Str., LV-1063 Riga (Latvia)

2008-04-07T23:59:59.000Z

27

GALLIUM--1997 29.1 By Deborah A. Kramer  

E-Print Network [OSTI]

As is manufactured into optoelectronic devices (LED's, laser diodes, photodetectors, and solar cells) and integrated consumption. Optoelectronic devices accounted for 44% of domestic consumption, and the remaining 7% was used by imports, primarily high-purity gallium from France and low-purity material from Russia. Optoelectronic

28

Self- and zinc diffusion in gallium antimonide  

SciTech Connect (OSTI)

The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak, (2001)]. Many of the findings which will be reported here were previously published in three journal articles. Hartmut Bracht was the lead author on two articles on self-diffusion studies in GaSb [Bracht, (2001), (2000)], while this report's author was the lead author on Zn diffusion results [Nicols, (2001)]. Much of the information contained herein can be found in those articles, but a more detailed treatment is presented here.

Nicols, Samuel Piers

2002-03-26T23:59:59.000Z

29

Sputtering of tin and gallium-tin clusters  

SciTech Connect (OSTI)

Tin and gallium-tin clusters have been produced by 4 keV Ar{sup +} ion bombardment of polycrystalline tin and the gallium-tin eutectic alloy and analyzed by time-of-flight mass spectrometry. The sputtered neutral species were photoionized with 193 nm (6.4 eV) excimer laser light. Neutral tin clusters containing up to 10 atoms and mixed gallium-tin clusters Ga{sub (n-m)}Sn{sub m} with n {<=} 4 for the neutrals and N {<=} 3 for the sputtered ionic species have been detected. Laser power density dependent intensity measurements, relative yields, and kinetic energy distributions have been measured. The abundance distributions of the mixed clusters have been found to be nonstatistical due to significant differences in the ionization efficiencies for clusters with equal nuclearity but different number of tin atoms. The results indicate that Ga{sub 2}Sn and Ga{sub 3}Sn like the all-gallium clusters have ionization potentials below 6.4 eV. In the case of Sn{sub 5}, Sn{sub 6}, GaSn and Ga{sub (n-m)}Sn{sub m} clusters with n=2 to 4 and m>1, the authors detect species that have sufficient internal energy to be one photon ionized despite ionization potentials that are higher 6.4 eV. The tin atom signal that is detected can be attributed to photofragmentation of dimers for both sputtering from polycrystalline tin and from the gallium-tin eutectic alloy.

Lill, T.; Calaway, W.F.; Ma, Z.; Pellin, M.J.

1994-08-01T23:59:59.000Z

30

Pair distribution function study on compression of liquid gallium  

SciTech Connect (OSTI)

Integrating a hydrothermal diamond anvil cell (HDAC) and focused high energy x-ray beam from the superconductor wiggler X17 beamline at the National Synchrotron Light Source (NSLS) at the Brookhaven National Laboratory (BNL), we have successfully collected high quality total x-ray scattering data of liquid gallium. The experiments were conducted at a pressure range from 0.1GPa up to 2GPa at ambient temperature. For the first time, pair distribution functions (PDF) for liquid gallium at high pressure were derived up to 10 {angstrom}. Liquid gallium structure has been studied by x-ray absorption (Di Cicco & Filipponi, 1993; Wei et al., 2000; Comez et al., 2001), x-ray diffraction studies (Waseda & Suzuki, 1972), and molecular dynamics simulation (Tsay, 1993; Hui et al., 2002). These previous reports have focused on the 1st nearest neighbor structure, which tells us little about the atomic arrangement outside the first shell in non- crystalline materials. This study focuses on the structure of liquid gallium and the atomic structure change due to compression. The PDF results show that the observed atomic distance of the first nearest neighbor at 2.78 {angstrom} (first G(r) peak and its shoulder at the higher Q position) is consistent with previous studies by x-ray absorption (2.76 {angstrom}, Comez et al., 2001). We have also observed that the first nearest neighbor peak position did not change with pressure increasing, while the farther peaks positions in the intermediate distance range decreased with pressure increasing. This leads to a conclusion of the possible existence of 'locally rigid units' in the liquid. With the addition of reverse Monte Carlo modeling, we have observed that the coordination number in the local rigit unit increases with pressure. The bulk modulus of liquid gallium derived from the volume compression curve at ambient temperature (300K) is 12.1(6) GPa.

Luo, Shengnian [Los Alamos National Laboratory; Yu, Tony [SUNY-SB; Chen, Jiuhua [SUNY-SB; Ehm, Lars [SUNY-SB; Guo, Quanzhong [SUNY-SB; Parise, John [SUNY-SB

2008-01-01T23:59:59.000Z

31

E-Print Network 3.0 - arsenide- gallium instrument Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: of gallium arsenide, a semiconductor, which is used in advanced optoelectronics, lasers, microwave circuits... , and solar cells. To determine material...

32

E-Print Network 3.0 - aluminum gallium indium Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Physics, Portland State University Collection: Physics 2 Alternative Energy Technologies Solar Power Summary: CIGS - Copper - Indium - Gallium - diSelenide Cd-Te -- Cadmium...

33

Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells  

DOE Patents [OSTI]

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO), Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

1998-08-08T23:59:59.000Z

34

Neutron detection using boron gallium nitride semiconductor material  

SciTech Connect (OSTI)

In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to ?-rays but poor sensitivity to ?-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after ?-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

Atsumi, Katsuhiro [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Inoue, Yoku; Nakano, Takayuki, E-mail: ttnakan@ipc.shizuoka.ac.jp [Department of Electrical and Materials Science, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Mimura, Hidenori; Aoki, Toru [Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)

2014-03-01T23:59:59.000Z

35

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network [OSTI]

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

36

Two-photon photovoltaic effect in gallium arsenide Jeff Chiles,1  

E-Print Network [OSTI]

Two-photon photovoltaic effect in gallium arsenide Jichi Ma,1 Jeff Chiles,1 Yagya D. Sharma,2 214669); published September 4, 2014 The two-photon photovoltaic effect is demonstrated in gallium; (230.0250) Optoelectronics; (040.5350) Photovoltaic; (130.4310) Nonlinear. http://dx.doi.org/10.1364/OL

Fathpour, Sasan

37

Gallium/aluminum nanocomposite material for nonlinear optics and nonlinear plasmonics  

E-Print Network [OSTI]

Gallium/aluminum nanocomposite material for nonlinear optics and nonlinear plasmonics A. V penetration of gallium into an aluminum film. These composite films form mirrorlike interfaces with silica optics and active plasmonics. The material is a polycrystalline aluminum film on a silica sub- strate

Zheludev, Nikolay

38

Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium  

DOE Patents [OSTI]

Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2000-01-01T23:59:59.000Z

39

IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 2, APRIL 2012 123 Gallium Arsenide Solar Cell Absorption  

E-Print Network [OSTI]

IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 2, APRIL 2012 123 Gallium Arsenide Solar Cell Absorption--Gallium arsenide, nanospheres, photovoltaic systems, whispering gallery modes (WGMs). I. INTRODUCTION THE route as the active layer is thinned [2]. Thin-film photovoltaics offer the possibility to significantly reduce

Grandidier, Jonathan

40

Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films  

E-Print Network [OSTI]

of the Nitrides of Aluminum and Gallium," J. Electrochem.1) 24 (1962). G. Long and L. M. Foster, "Aluminum Nitride, aRefractory for Aluminum to 2000°C," J. Am. Ceram. Soc. ,

Tao, Jonathan Huai-Tse

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism inS-4500II FieldVacancy-Induced Nanoscale Wire Structure in Gallium

42

Gallium phosphide high-temperature bipolar junction transistor  

SciTech Connect (OSTI)

Preliminary results are reported on the development of a high-temperature (> 350/sup 0/C) gallium phosphide bipolar junction transistor (BJT) for goethermal and other energy applications. This four-layer p/sup +/n/sup -/pp/sup +/ structure was fromed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The gallium phosphide BJT is observed to have a common-emitter current gain peaking in the range of 6 to 10 (for temperatures from 20/sup 0/C to 400/sup 0/C) and a room-temperature, punchthrough-limited, collector-emitter breakdown voltage of approximately -6V. Other parameters of interest include an f/sub/ = 400 KHz (at 20/sup 0/C) and a collector base leakage current = 200 ..mu..A (at 350/sup 0/C).

Zipperian, T.E.; Dawson, L.R.; Caffin, R.J.

1981-03-01T23:59:59.000Z

43

Specific interaction of fluoride ions with aluminum and gallium solvates in an ethylene glycol solutions  

SciTech Connect (OSTI)

The interaction of aluminum chloride and gallium chloride with KF in ethylene glycol solutions with F:M/sup 3 +/ mole ratios approximately equal to 2 includes a step involving the formation of fluorine-containing species, in which the fluoride ions are held in the outer sphere of ethylene glycol solvates of aluminum and gallium. Complexes based on hexacoordinate solvates predominate in the solutions of aluminum, while in the case of gallium, in contrast to aluminum, the coexistence of tetra- and hexacoordinate complexes is characteristic. The configurational equilibrium in the solutions of gallium is one of the causes of the structurization of the solutions, i.e., polymerization due to the formation of H bonds between the fluoride ions and the coordinated ethylene glycol molecules.

Petrosyants, S.P.; Tsabel', E.R.; Buslaev, Yu.A.

1986-01-01T23:59:59.000Z

44

GALLIUM--2002 29.1 References that include a section mark () are found in the Internet  

E-Print Network [OSTI]

consumed in the United States was in the form of GaAs. GaAs was manufactured into optoelectronic devices application for gallium, with 46% of total consumption. Optoelectronic devices accounted for 42% of domestic

45

Fabrication of optoelectronic microwave linear and ring resonators on a gallium arsenide substrate  

E-Print Network [OSTI]

FABRICATION OF OPTOELECTRONIC MICROWAVE LINEAR AND RING RESONATORS ON A GALLIUM ARSENIDE SUBSTRATE A Thesis by CHUN-LIANG YEH Submitted to the Office of Graduate Studies of Texas ASM University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE August 1993 Major Subject: Electrical Engineering FABRICATION OF OPTOELECTRONIC MICROWAVE LINEAR AND RING RESONATORS ON A GALLIUM ARSENIDE SUBSTRATE A Thesis by CHUN-LIANG YEH Approved as to style and content by: Mark...

Yeh, Chun-Liang

1993-01-01T23:59:59.000Z

46

First Results of the Testing of the Liquid Gallium Jet Limiter Concept for ISTTOK  

SciTech Connect (OSTI)

The use of liquid metals as plasma facing components in tokamaks has recently experienced a renewed interest stimulated by their advantages to the development of a fusion reactor. Liquid metals have been proposed to solve problems related to the erosion and neutronic activation of solid walls submitted to high power loads allowing an efficient heat exhaustion from fusion devices. Presently the most promising materials are Lithium and Gallium. ISTTOK, a small size tokamak, will be used to test the behavior of a liquid Gallium jet in the vacuum chamber and its influence on the plasma. This paper presents a description of the conceived setup as well as experimental results. The liquid Gallium jet is generated by hydrostatic pressure and injected in a radial position close to a moveable stainless steel limiter. Both the jet and the limiter positions are variable allowing for a controlled exposure of the liquid Gallium to the edge plasma. The main components of the Gallium loop are a MHD pump, the liquid metal injector and a filtering system. The MHD pump is of the induction type, based on rotating permanent magnets. The injector is build from a stainless steel pipe ended by a shaping nozzle. A setup has been developed to introduce oxide-free Gallium inside the loop's main supply tank. Raw liquid metal is placed inside a chamber heated and degassed under high vacuum while clean Gallium is extracted from the main body of the liquefied metal. Prior to installation on the tokamak, the experimental rig has been implemented using a Pyrex tube as test chamber to investigate the stability of the Gallium jet and its break-up length for several nozzle sizes. Results are presented in this paper. This rig was also useful to assess the behavior of the overall implemented apparatus.

Gomes, R. B.; Fernandes, H.; Silva, C.; Borba, D.; Carvalho, B.; Varandas, C. [Associacao EURATOM/IST, Centro de FuSao Nuclear, Av. Rovisco Pais, 1049-001 Lisbon (Portugal); Lielausis, O.; Klyukin, A.; Platacis, E.; Mikelsons, A.; Platnieks, I. [Association EURATOM/University of Latvia, Institute of Physics, 32 Miera Str., Salaspils, LV-2169 (Latvia)

2006-12-04T23:59:59.000Z

47

Study of Magnetohydrodynamic Surface Waves on Liquid Gallium  

SciTech Connect (OSTI)

Magnetohydrodynamic (MHD) surface waves on liquid gallium are studied theoretically and experimentally in the small magnetic Reynolds number limit. A linear dispersion relation is derived when a horizontal magnetic field and a horizontal electric current is imposed. No wave damping is found in the shallow liquid limit while waves always damp in the deep liquid limit with a magnetic field parallel to the propagation direction. When the magnetic field is weak, waves are weakly damped and the real part of the dispersion is unaffected, while in the opposite limit waves are strongly damped with shortened wavelengths. In a table-top experiment, planar MHD surface waves on liquid gallium are studied in detail in the regime of weak magnetic field and deep liquid. A non-invasive diagnostic accurately measures surface waves at multiple locations by reflecting an array of lasers off the surface onto a screen, which is recorded by an Intensified-CCD camera. The measured dispersion relation is consistent with the linear theory with a reduced surface tension likely due to surface oxidation. In excellent agreement with linear theory, it is observed that surface waves are damped only when a horizontal magnetic field is imposed parallel to the propagation direction. No damping is observed under a perpendicular magnetic field. The existence of strong wave damping even without magnetic field suggests the importance of the surface oxide layer. Implications to the liquid metal wall concept in fusion reactors, especially on the wave damping and a Rayleigh-Taylor instability when the Lorentz force is used to support liquid metal layer against gravity, are discussed.

Hantao Ji; William Fox; David Pace; H.L. Rappaport

2004-05-13T23:59:59.000Z

48

Study of liquid gallium at high pressure using synchrotron x-ray  

SciTech Connect (OSTI)

Liquid gallium has been studied at high pressure up to 2 GPa and ambient temperature in a diamond anvil cell using high energy synchrotron x-ray beam. The total x-ray scattering data of liquid gallium were collected up to Q = 12 A{sup -1} and analyzed using pair distribution functions (PDF). The results indicate that the first nearest neighbor peak and second nearest neighbor (shoulder) peak of PDF in liquid gallium does not change with pressure, whereas the higher order (i.e., third and fourth) nearest neighbor peaks shift towards shorter distance with increasing pressure. Reverse Monte Carlo modeling based on the observed data shows that the coordination number in the liquid gallium increases with pressure from 10.5 at 0.3 GPa to 11.6 at 2 GPa. An atomic arrangement similar to the crystalline phase of Ga(II) with coordination number of 12 is proposed for the locally dense-packed rigid unit in liquid gallium. The volume compression data derived from the structure modeling yield a bulk modulus of 12.1(6) GPa for liquid gallium.

Yu, Tony; Guo Quanzhong; Parise, John [Department of Geosciences, Mineral Physics Institute, Stony Brook University, Stony Brook, New York 11794-2100 (United States); Chen Jiuhua [Department of Geosciences, Mineral Physics Institute, Stony Brook University, Stony Brook, New York 11794-2100 (United States); Department of Mechanical and Materials Engineering, Center for the Study of Matters at Extreme Conditions, Florida International University, Miami, Florida 33199 (United States); Ehm, Lars [Department of Geosciences, Mineral Physics Institute, Stony Brook University, Stony Brook, New York 11794-2100 (United States); National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973-5000 (United States); Huang Shu [Department of Mechanical and Materials Engineering, Center for the Study of Matters at Extreme Conditions, Florida International University, Miami, Florida 33199 (United States); Luo Shengnian [Physics Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

2012-06-01T23:59:59.000Z

49

High-Temperature Decomposition of Brønsted Acid Sites in Gallium-Substituted Zeolites  

SciTech Connect (OSTI)

The dehydroxylation of Broensted acid sites (BAS) in Ga-substituted zeolites was investigated at temperatures up to 850 C using X-ray absorption spectroscopy (XAS), Fourier transform infrared spectroscopy (FTIR), and mass spectrometry-temperature programmed desorption (MS-TPD). X-ray absorption near-edge spectroscopy (XANES) revealed that the majority of gallium has tetrahedral coordination even after complete dehydroxylation. The interatomic gallium-oxygen distance and gallium coordination number determined by extended X-ray absorption fine structure (EXAFS) are consistent with gallium in tetrahedral coordination at low T (< 550 C). Upon heating Ga-Beta and Ga-ZSM5 to 850 C, analysis of the EXAFS showed that 70 and 80% of the gallium was still in tetrahedral coordination. The remainder of the gallium was found to be in octahedral coordination. No trigonal Ga atoms were observed. FTIR measurements carried out at similar temperatures show that the intensity of the OH vibration due to BAS has been eliminated. MS-TPD revealed that hydrogen in addition to water evolved from the samples during dehydroxylation. This shows that dehydrogenation in addition to dehydration is a mechanism that contributes to BAS decomposition. Dehydrogenation was further confirmed by exposing the sample to hydrogen to regenerate some of the BAS as monitored by FTIR and MS-TPD.

K Al-majnouni; N Hould; W Lonergan; D Vlachos; R Lobo

2011-12-31T23:59:59.000Z

50

By Deborah A. Kramer No gallium production was reported in the McDonnell Douglas Corp. reportedly will world producers were Australia, Germany, and  

E-Print Network [OSTI]

facility in optoelectronic devices [light-emitting diodes France from stockpiled crude gallium produced, and in 1994. Although the total quantity of gallium used in optoelectronic devices increased, its percentage

51

(Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon  

DOE Patents [OSTI]

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2002-01-01T23:59:59.000Z

52

(Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon  

DOE Patents [OSTI]

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2001-01-01T23:59:59.000Z

53

Electron backscatter diffraction of plutonium-gallium alloys  

SciTech Connect (OSTI)

At Los Alamos National Laboratory a recent experimental technique has been developed to characterize reactive metals, including plutonium arid cerium, using electron backscatter diffraction (EBSD). Microstructural characterization of plutonium and its alloys by EBSD had been previously elusive primarily because of the extreme toxicity and rapid surface oxidation rate associated with plutonium metal. The experimental techniques, which included ion-sputtering the metal surface using a scanning auger microprobe (SAM) followed by vacuum transfer of the sample from the SAM to the scanning electron microscope (SEM), used to obtain electron backscatter diffraction Kikuchi patterns (EBSPs) and orientation maps for plutonium-gallium alloys are described and the initial microstructural observations based on the analysis are discussed. Combining the SEM and EBSD observations, the phase transformation behavior between the {delta} and {var_epsilon} structures was explained. This demonstrated sample preparation and characterization technique is expected to be a powerful means to further understand phase transformation behavior, orientation relationships, and texlure in the complicated plutonium alloy systems.

Boehlert, C. J. (Carl J.); Zocco, T. G. (Thomas G.); Schulze, R. K. (Roland K.); Mitchell, J. N. (Jeremy N.); Pereyra, R. A. (Ramiro A.)

2002-01-01T23:59:59.000Z

54

Change in the current-carrier concentration upon doping PbTe with gallium  

SciTech Connect (OSTI)

Upon doping PbTe with gallium, both high-resistivity samples with intrinsic conductivity and low-resistivity samples with electronic conductivity (n/sub e/ = 10/sup 18/ cm/sup -3/) are produced on the PbTe-GaTe section. A thorough investigation of the dependence of the thermo-emf of Pb/sub 1-x/Ga/sub x/Te on the excess Pb and Te side showed the presence of a wide region with intrinsic conductivity. The experimental data can be explained by the fact that impure gallium in PbTe has negative Hubbard energy and stabilizes the Fermi level almost at the center of the forbidden band. At high gallium concentrations, Ga/sub 2/Te/sub 3/ precipitates at first, and then GaTe precipitates as well. The lead forming in excess transforms Ga/sup 3 +/ to Ga/sup +/, which produces the electronic conductivity in the material.

Bushmarina, G.S.; Gruzinov, B.F.; Drabkin, I.A.; Lev, E.Ya.; Moizhes, B.Ya; Suprun, S.G.

1987-07-01T23:59:59.000Z

55

Percolation of gallium dominates the electrical resistance of focused ion beam deposited metals  

SciTech Connect (OSTI)

Metal deposition through focused ion beam (FIB) based systems is thought to result in material composed of the primary metal from the metallo-organic precursor in addition to carbon, oxygen, and gallium. We determined, through electrical resistance and chemical composition measurements on a wide range of FIB deposited platinum and tungsten lines, that the gallium ion (Ga{sup +}) concentration in the metal lines plays the dominant role in controlling the electrical resistivity. Effective medium theory, based on McLachlan's formalisms, was used to describe the relationship between the Ga{sup +} concentration and the corresponding resistivity.

Faraby, H. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); DiBattista, M. [Qualcomm Technologies Incorporated, San Diego, California 92121 (United States); Bandaru, P. R., E-mail: pbandaru@ucsd.edu [Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2014-04-28T23:59:59.000Z

56

Results of the Gallium-Clad Phase 3 and Phase 4 tasks (canceled prior to completion)  

SciTech Connect (OSTI)

This report summarizes the results of the Gallium-Clad interactions Phase 3 and 4 tasks. Both tasks were to involve examining the out-of-pile stability of residual gallium in short fuel rods with an imposed thermal gradient. The thermal environment was to be created by an electrical heater in the center of the fuel rod and coolant flow on the rod outer cladding. Both tasks were canceled due to difficulties with fuel pellet fabrication, delays in the preparation of the test apparatus, and changes in the Fissile Materials Disposition program budget.

Morris, R.N.

1998-08-01T23:59:59.000Z

57

Millimeter wave ferromagnetic resonance in gallium-substituted ?-iron oxide  

SciTech Connect (OSTI)

In millimeter wave frequency range, hexagonal ferrites with high uniaxial anisotropic magnetic fields are used as absorbers. These ferrites include M-type barium ferrite (BaFe{sub 12}O{sub 19}) and strontium ferrite (SrFe{sub 12}O{sub 19}), which have natural ferromagnetic resonant frequency range from 40 GHz to 60?GHz. However, the higher frequency range lacks suitable materials that support the higher frequency ferromagnetic resonance. A new series of gallium-substituted ?-iron oxides (?-Ga{sub x}Fe{sub 2?x}O{sub 3}) are synthesized which have ferromagnetic resonant frequencies appearing over the frequency range 30 GHz–150 GHz. The ?-Ga{sub x}Fe{sub 2?x}O{sub 3} is synthesized by the combination of reverse micelle and sol-gel techniques or the sol-gel method only. The particle sizes are observed to be smaller than 100 nm. In this paper, the free space magneto-optical approach has been employed to study these newly developed ?-Ga{sub x}Fe{sub 2?x}O{sub 3} particles in millimeter waves. This technique enables to obtain precise transmission spectra to determine the dielectric and magnetic properties of both isotropic and anisotropic ferrites in the millimeter wave frequency range from a single set of direct measurements. The transmittance and absorbance spectra of ?-Ga{sub x}Fe{sub 2?x}O{sub 3} are shown in this paper. Strong ferromagnetic resonances at different frequencies determined by the x parameter are found.

Chao, Liu, E-mail: liu.chao@tufts.edu; Afsar, Mohammed N. [Department of Electrical and Computer Engineering, Tufts University, Medford, Massachusetts 02155 (United States); Ohkoshi, Shin-ichi [Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

2014-05-07T23:59:59.000Z

58

Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire-array  

E-Print Network [OSTI]

Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire, and will aid in the design and optimization of nanowire-based systems for solar energy-conversion applications, and the photoelectrochemical energy-conversion properties of GaAs nanowire arrays were evaluated in contact with one

Zhou, Chongwu

59

GALLIUM--2003 28.1 References that include a section mark () are found in the Internet  

E-Print Network [OSTI]

in the United States was in the form of GaAs. GaAs was manufactured into optoelectronic devices (LEDs, laser diodes, photodetectors, and solar cells) and ICs. ICs and optoelectronic devices each accounted for 41) and optoelectronic devices [mostly laser diodes and light- emitting diodes (LEDs)]. Estimated crude gallium

60

Fast neutron scattering on Gallium target at 14.8 MeV  

E-Print Network [OSTI]

Benchmarking of evaluated nuclear data libraries was performed for $\\sim 14.8$ MeV neutrons on Gallium targets. The experiments were performed at China Institute of Atomic Energy(CIAE). Solid samples of natural Gallium (3.2 cm and 6.4 cm thick) were bombarded by $\\sim 14.8$ MeV neutrons and leakage neutron energy spectra were measured at 60$^{\\circ}$ and 120$^{\\circ}$. The measured spectra are rather well reproduced by MCNP-4C simulations with the CENDL-3.1, ENDF/B-VII and JENDL-4.0 evaluated nuclear data libraries, except for the inelastic contributions around $E_{n} = 10-13$ MeV. All three libraries significantly underestimate the inelastic contributions. The inelastic contributions are further studied, using the Talys simulation code and the experimental spectra are reproduced reasonably well in the whole energy range by the Talys calculation, including the inelastic contributions.

R. Han; R. Wada; Z. Chen; Y. Nie; X. Liu; S. Zhang; P. Ren; B. Jia; G. Tian; F. Luo; W. Lin; J. Liu; F. Shi; M. Huang; X. Ruan; J. Ren; Z. Zhou; H. Huang; J. Bao; K. Zhang; B. Hu

2014-11-03T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Fast neutron scattering on Gallium target at 14.8 MeV  

E-Print Network [OSTI]

Benchmarking of evaluated nuclear data libraries was performed for $\\sim 14.8$ MeV neutrons on Gallium targets. The experiments were performed at China Institute of Atomic Energy(CIAE). Solid samples of natural Gallium (3.2 cm and 6.4 cm thick) were bombarded by $\\sim 14.8$ MeV neutrons and leakage neutron energy spectra were measured at 60$^{\\circ}$ and 120$^{\\circ}$. The measured spectra are rather well reproduced by MCNP-4C simulations with the CENDL-3.1, ENDF/B-VII and JENDL-4.0 evaluated nuclear data libraries, except for the inelastic contributions around $E_{n} = 10-13$ MeV. All three libraries significantly underestimate the inelastic contributions. The inelastic contributions are further studied, using the Talys simulation code and the experimental spectra are reproduced reasonably well in the whole energy range by the Talys calculation, including the inelastic contributions.

Han, R; Chen, Z; Nie, Y; Liu, X; Zhang, S; Ren, P; Jia, B; Tian, G; Luo, F; Lin, W; Liu, J; Shi, F; Huang, M; Ruan, X; Ren, J; Zhou, Z; Huang, H; Bao, J; Zhang, K; Hu, B

2014-01-01T23:59:59.000Z

62

Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities  

E-Print Network [OSTI]

Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we utilize the distinctive, high quality (Q~5500) modes of the cavities, and the change in the highest ...

Woolf, Alexander; Aharanovich, Igor; Zhu, Tongtong; Niu, Nan; Wang, Danqing; Oliver, Rachel A; Hu, Evelyn L

2014-01-01T23:59:59.000Z

63

(Polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon  

DOE Patents [OSTI]

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interefere in the ethylene polymerization process, while affecting the the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2001-01-01T23:59:59.000Z

64

Gallium Lighting, LLC, Accepts Inaugural Position on the Industry Advisory Board of UC-Light Center to Help Bring Wireless Data  

E-Print Network [OSTI]

Gallium Lighting, LLC, Accepts Inaugural Position on the Industry Advisory Board of UC-Light Center to Help Bring Wireless Data Communications Capabilities to LED Lights Fayetteville, GA ­ February 10, 2011 ­Gallium Lighting, LLC, announced today it has accepted an inaugural position

65

Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors  

SciTech Connect (OSTI)

In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Sze, Simon M. [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China)

2014-04-14T23:59:59.000Z

66

Synthesis of graphene nanoribbons from amyloid templates by gallium vapor-assisted solid-phase graphitization  

SciTech Connect (OSTI)

Single- and double-layer graphene nanoribbons (GNRs) with widths of around 10?nm were synthesized directly onto an insulating substrate by solid-phase graphitization using a gallium vapor catalyst and carbon templates made of amyloid fibrils. Subsequent investigation revealed that the crystallinity, conductivity, and carrier mobility were all improved by increasing the temperature of synthesis. The carrier mobility of the GNR synthesized at 1050?°C was 0.83 cm{sup 2}/V?s, which is lower than that of mechanically exfoliated graphene. This is considered to be most likely due to electron scattering by the defects and edges of the GNRs.

Murakami, Katsuhisa, E-mail: k.murakami@bk.tsukuba.ac.jp; Dong, Tianchen; Kajiwara, Yuya; Takahashi, Teppei; Fujita, Jun-ichi [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Tsukuba Research Center for Interdisciplinary Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Hiyama, Takaki; Takai, Eisuke; Ohashi, Gai; Shiraki, Kentaro [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)

2014-06-16T23:59:59.000Z

67

Anionic Gallium-Based Metal;#8722;Organic Framework and Its Sorption and Ion-Exchange Properties  

SciTech Connect (OSTI)

A gallium-based metal-organic framework Ga{sub 6}(C{sub 9}H{sub 3}O{sub 6}){sub 8} {center_dot} (C{sub 2}H{sub 8}N){sub 6}(C{sub 3}H{sub 7}NO){sub 3}(H{sub 2}O){sub 26} [1, Ga{sub 6}(1,3,5-BTC){sub 8} {center_dot} 6DMA {center_dot} 3DMF {center_dot} 26H{sub 2}O], GaMOF-1; BTC = benzenetricarboxylate/trimesic acid and DMA = dimethylamine, with space group I{bar 4}3d, a = 19.611(1) {angstrom}, and V = 7953.4(6) {angstrom}{sup 3}, was synthesized using solvothermal techniques and characterized by synchrotron-based X-ray microcrystal diffraction. Compound 1 contains isolated gallium tetrahedra connected by the organic linker (BTC) forming a 3,4-connected anionic porous network. Disordered positively charged ions and solvent molecules are present in the pore, compensating for the negative charge of the framework. These positively charged molecules could be exchanged with alkali-metal ions, as is evident by an ICP-MS study. The H{sub 2} storage capacity of the parent framework is moderate with a H{sub 2} storage capacity of {approx}0.5 wt % at 77 K and 1 atm.

Banerjee, Debasis; Kim, Sun Jin; Wu, Haohan; Xu, Wenqian; Borkowski, Lauren A.; Li, Jing; Parise, John B. (Kwangju); (Rutgers); (SBU)

2012-04-30T23:59:59.000Z

68

Dynamics of formation of photoresponse in a detector structure made of gallium arsenide  

SciTech Connect (OSTI)

The influence of capture effects on the characteristics of detectors of the ionizing radiation based on semi-insulating gallium arsenide is considered. Generation of nonequilibrium electrons and holes along the entire thickness of the active region was performed under illumination with an infrared light-emitting diode with a wavelength of 0.9 {mu}m. In this case, the situation emerging in the device structure under the effect of X-ray radiation or a high-energy electron beam was simulated. It is shown that the variation in the shape of the output signal with time in this case is caused by variation in the electric field profile due to the capture of holes at deep centers in gallium arsenide. An absolutely different distribution of the electric field emerges in the structure under irradiation of a semitransparent cathode of the structure with a red light-emitting diode, emission of which penetrates into the active region for mere 1 {mu}m. In this case, the transformation of the electric field is caused by the capture of electrons. Under the prolonged effect of such radiation, a space-charge-limited current mode emerges in the device.

Ayzenshtat, G. I., E-mail: ayzen@mail.tomsknet.ru; Lelekov, M. A.; Tolbanov, O. P. [Tomsk State University (Russian Federation)

2008-04-15T23:59:59.000Z

69

Simulation assisted design of a gallium phosphide np photovoltaic junction Charles R. Allen, Jong-Hyeok Jeon , Jerry M. Woodall  

E-Print Network [OSTI]

University, 1205 W State Street, West Lafayette, IN, USA a r t i c l e i n f o Article history: Received 27 February 2010 Keywords: Gallium phosphide Solar cell Multi-junction CPV Simulation a b s t r a c with measurements of the dark and light response. The light current was measured under an illumination of air mass

Woodall, Jerry M.

70

Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy  

E-Print Network [OSTI]

Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride to examine the effects of carbon tetrachloride concentration and temperature on the morphology of carbon with increasing carbon tetrachloride concentration. Step bunching and pinning was observed at a IV/III ratio

Li, Lian

71

Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR spectroscopy  

SciTech Connect (OSTI)

Ordering of gallium(III) in a series of magnesium gallium layered double hydroxides (LDH’s), [Mg1-xGax(OH)2(NO3)x yH2O], was determined using solid-state 1H and 71Ga NMR spectroscopy. Depletion of Ga in these LDH’s is demonstrated to be the result of soluble [Ga(OH)4]-complexes formed during synthesis.

Petersen, Line B.; Lipton, Andrew S.; Zorin, Vadim; Nielsen, Ulla Gro

2014-11-01T23:59:59.000Z

72

Catalytic and physicochemical properties of aluminoplatinum catalysts modified with indium and gallium  

SciTech Connect (OSTI)

Aluminoplatinum catalysts (APC) are widely used in transformations of hydrocarbons, particularly in reforming of gasoline fractions and dehydrogenation of higher normal paraffins. Promotion of APC with indium and gallium increases their activity and stability in the dehydrogenation of paraffins. Introduction of group III elements in APC inhibits coke formation during dehydrogenation and prevents blocking of the surface of the Pt. The change in the catalytic properties of APC modified with In is due to the partial transfer of the electron density from Pt to In. Both APC with In and Ga additives and monometallic catalysts were studied in the present article by the methods of IR spectroscopy and adsorption. In addition to traditional transmission IR spectroscopy, IR spectroscopy in diffusely scattered light was used, which permits conducting both spectral and adsorption measurements on the same samples.

Zaitsev, A.V.; Tyupaev, A.P.; Borovkov, V.Yu.; Timofeeva, E.A.; Isatulyants, G.V.; Kazanskii, B.B.

1986-10-10T23:59:59.000Z

73

The status of the solar neutrino problem and the Russian-American gallium experiment (SAGE)  

SciTech Connect (OSTI)

Perhaps the most outstanding discrepancy between prediction and measurements in current particle physics comes from the solar neutrino problem, in which a large deficit of high-energy solar neutrinos is observed. Many Nonstandard Solar Models have been invoked to try to reduce the predicted flux, but all have run into problems in trying to reproduce other measured parameters (e.g., the luminosity) of the Sun. Other explanations involving new physics such as neutrino decay and neutrino oscillations, etc. have also been proffered. Again, most of these explanations have been ruled out by either laboratory or astrophysical measurements. It appears that perhaps the most likely particle physics solution is that of matter enhanced neutrino oscillation, the Mikheyev-Smirnov-Wolfenstein (MSW) oscillations. Two new radiochemical gallium experiments, which have a low enough threshold to be sensitive to the dominant flux of low-energy p-p neutrinos, now also report a deficit and also favor a particle physics solution.

Bowles, T.J.

1994-04-01T23:59:59.000Z

74

Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen  

SciTech Connect (OSTI)

The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

Sallis, S.; Williams, D. S. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States); Butler, K. T.; Walsh, A. [Center for Sustainable Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Quackenbush, N. F. [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Junda, M.; Podraza, N. J. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Fischer, D. A.; Woicik, J. C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); White, B. E.; Piper, L. F. J., E-mail: lpiper@binghamton.edu [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

2014-06-09T23:59:59.000Z

75

Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters  

SciTech Connect (OSTI)

Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.

Muhammad, R.; Ahamad, R. [Sustainability Research Alliance, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Ibrahim, Z.; Othaman, Z. [Physic Department, Faculty of Science, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia)

2014-03-05T23:59:59.000Z

76

Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module  

SciTech Connect (OSTI)

We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

2013-06-01T23:59:59.000Z

77

Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations  

SciTech Connect (OSTI)

A numerical analysis of the deposition of gallium from trimethylgallium (TMG) and arsine in a horizontal CVD reactor with tilted susceptor and a three inch diameter rotating substrate is performed. The three-dimensional model includes complete coupling between fluid mechanics, heat transfer, and species transport, and is solved using an unstructured finite element discretization on a massively parallel computer. The effects of three operating parameters (the disk rotation rate, inlet TMG fraction, and inlet velocity) and two design parameters (the tilt angle of the reactor base and the reactor width) on the growth rate and uniformity are presented. The nonlinear dependence of the growth rate uniformity on the key operating parameters is discussed in detail. Efficient and robust algorithms for massively parallel reacting flow simulations, as incorporated into our analysis code MPSalsa, make detailed analysis of this complicated system feasible.

Salinger, A.G.; Shadid, J.N.; Hutchinson, S.A. [and others

1998-01-01T23:59:59.000Z

78

Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope  

SciTech Connect (OSTI)

We used a broadband, atomic-force-microscope-based, scanning microwave microscope (SMM) to probe the axial dependence of the charge depletion in a p-n junction within a gallium nitride nanowire (NW). SMM enables the visualization of the p-n junction location without the need to make patterned electrical contacts to the NW. Spatially resolved measurements of S{sub 11}{sup ?}, which is the derivative of the RF reflection coefficient S{sub 11} with respect to voltage, varied strongly when probing axially along the NW and across the p-n junction. The axial variation in S{sub 11}{sup ?}? effectively mapped the asymmetric depletion arising from the doping concentrations on either side of the junction. Furthermore, variation of the probe tip voltage altered the apparent extent of features associated with the p-n junction in S{sub 11}{sup ?} images.

Imtiaz, Atif [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Wallis, Thomas M.; Brubaker, Matt D.; Blanchard, Paul T.; Bertness, Kris A.; Sanford, Norman A.; Kabos, Pavel, E-mail: kabos@boulder.nist.gov [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Weber, Joel C. [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Coakley, Kevin J. [Information Technology Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States)

2014-06-30T23:59:59.000Z

79

Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells  

DOE Patents [OSTI]

A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

Bhattacharya, Raghu N. (Littleton, CO); Hasoon, Falah S. (Arvada, CO); Wiesner, Holm (Golden, CO); Keane, James (Lakewood, CO); Noufi, Rommel (Golden, CO); Ramanathan, Kannan (Golden, CO)

1999-02-16T23:59:59.000Z

80

Crystal structure and electron microprobe analyses of a lanthanum lutetium gallium garnet  

SciTech Connect (OSTI)

Single-crystal electron microprobe analysis of a lanthanum lutetium gallium garnet has resulted in a composition of La{sub 2.37}Nd{sub 0.07}Pb{sub 0.01}Lu{sub 2.54}Cr{sub 0.01} Ga{sub 3.00}O{sub 12}. This composition gives better agreement between observed and calculated total dielectric polarizabilities than previously reported compositions (La{sub 2.26--2.32}Nd{sub 0.04}Lu{sub 2.57--2.63}Ga{sub 3.07}O{sub 12} by x-ray fluorescence and La{sub 2.655}Nd{sub 0.027}Lu{sub 2.656}Ga{sub 2.655}O{sub 12} by inductively coupled plasma analyses), and does not imply the crystal-chemically improbable presence of Lu{sup 3+} in the tetrahedral site. X-ray and neutron crystal-structure analyses have confirmed that little or no Lu resides in this site.

Parise, J.B.; Harlow, R.L.; Shannon, R.D. (Central Research and Development Department, E. I. DuPont De Nemours and Co., Experimental Station, Wilmington, Delaware 19880-0228 (United States)); Kwei, G.H. (LANSCE, MS-H805, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)); Allik, T.H. (Science Applications International Corporation, 1710 Goodridge Dr., P.O. Box 1303, McLean, Virginia 22102 (United States)); Armstrong, J.T. (Department of Geological and Planetary Sciences, California Institute of Technology, Pasadena, California 91125 (United States))

1992-09-15T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

More Efficient Power Conversion for EVs: Gallium-Nitride Advanced Power Semiconductor and Packaging  

SciTech Connect (OSTI)

Broad Funding Opportunity Announcement Project: Delphi is developing power converters that are smaller and more energy efficient, reliable, and cost-effective than current power converters. Power converters rely on power transistors which act like a very precisely controlled on-off switch, controlling the electrical energy flowing through an electrical circuit. Most power transistors today use silicon (Si) semiconductors. However, Delphi is using semiconductors made with a thin layer of gallium-nitride (GaN) applied on top of the more conventional Si material. The GaN layer increases the energy efficiency of the power transistor and also enables the transistor to operate at much higher temperatures, voltages, and power-density levels compared to its Si counterpart. Delphi is packaging these high-performance GaN semiconductors with advanced electrical connections and a cooling system that extracts waste heat from both sides of the device to further increase the device’s efficiency and allow more electrical current to flow through it. When combined with other electronic components on a circuit board, Delphi’s GaN power transistor package will help improve the overall performance and cost-effectiveness of HEVs and EVs.

None

2010-02-01T23:59:59.000Z

82

Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch  

SciTech Connect (OSTI)

Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2?kV is applied, after an exciting optical pulse with energy of 1??J arrival, the structure with thickness of 650??m reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (?4?kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ?4?kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed.

Hu, Long, E-mail: hulong-1226@126.com [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049 (China); Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi'an 710024 (China); Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin [Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi'an 710024 (China)

2014-03-07T23:59:59.000Z

83

Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide  

SciTech Connect (OSTI)

This paper proposes the application of gallium oxide (Ga{sub 2}O{sub 3}) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga{sub 2}O{sub 3} films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O{sub 3}) as the reactants. Surface recombination velocities as low as 6.1?cm/s have been recorded with films less than 4.5?nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2?Å/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga{sub 2}O{sub 3} interface has been found to be approximately 0.5?eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9?eV.

Allen, T. G., E-mail: thomas.allen@anu.edu.au; Cuevas, A. [Research School of Engineering, Australian National University, Canberra 0200 (Australia)

2014-07-21T23:59:59.000Z

84

Shear strain mediated magneto-electric effects in composites of piezoelectric lanthanum gallium silicate or tantalate and ferromagnetic alloys  

SciTech Connect (OSTI)

Shear strain mediated magneto-electric (ME) coupling is studied in composites of piezoelectric Y-cut lanthanum gallium silicate (LGS) or tantalate (LGT) and ferromagnetic Fe-Co-V alloys. It is shown that extensional strain does not result in ME effects in these layered composites. Under shear strain generated by an ac and dc bias magnetic fields along the length and width of the sample, respectively, strong ME coupling is measured at low-frequencies and at mechanical resonance. A model is discussed for the ME effects. These composites of Y-cut piezoelectrics and ferromagnetic alloys are of importance for shear strain based magnetic field sensors.

Sreenivasulu, G.; Piskulich, E.; Srinivasan, G., E-mail: srinivas@oakland.edu [Physics Department, Oakland University, Rochester, Michigan 48409 (United States); Qu, P.; Qu, Hongwei [Electrical and Computer Engineering, Oakland University, Rochester, Michigan 48309 (United States); Petrov, V. M. [Institute of Electronic Information Systems, Novgorod State University, Veliky Novgorod (Russian Federation); Fetisov, Y. K. [Moscow State Technical University of Radio Engineering, Electronics and Automation, Moscow 19454 (Russian Federation); Nosov, A. P. [Institute of Metal Physics, Ural Division of Russian Academy of Sciences, 18 S. Kovalevskaya St, Ekaterinburg 620990 (Russian Federation)

2014-07-21T23:59:59.000Z

85

Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors  

DOE Patents [OSTI]

Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

Curtis, Calvin J. (Lakewood, CO); Miedaner, Alexander (Boulder, CO); Van Hest, Maikel (Lakewood, CO); Ginley, David S. (Evergreen, CO); Nekuda, Jennifer A. (Lakewood, CO)

2011-11-15T23:59:59.000Z

86

The reaction of carbon tetrachloride with gallium arsenide ,,001... L. Li., S, Gan, B.-K. Han, H. Qi, and R. F. Hicksa)  

E-Print Network [OSTI]

The reaction of carbon tetrachloride with gallium arsenide ,,001... L. Li., S, Gan, B.-K. Han, H, California 90095 Received 26 June 1997; accepted for publication 30 December 1997 Carbon tetrachloride of steps during the vapor-phase epitaxial growth of III­V compound semiconductors.3,4 Carbon tetrachloride

Li, Lian

87

Measurement of the solar neutrino capture rate with gallium metal, part III  

SciTech Connect (OSTI)

The Russian-American experiment SAGE began to measure the solar neutrino capture rate with a target of gallium metal in December 1989. Measurements have continued with only a few brief interruptions since that time. In this article we present the experimental improvements in SAGE since its last published data summary in December 2001. Assuming the solar neutrino production rate was constant during the period of data collection, combined analysis of 168 extractions through December 2007 gives a capture rate of solar neutrinos with energy more than 233 keY of 65.4{sup +3.1}{sub 3.0} (stat) {sup +2.6}{sub -2.8} (syst) SNU. The weighted average of the results of all three Ga solar neUlrino experiments, SAGE, Gallex, and GNO, is now 66.1 {+-} 3.1 SNU, where statistical and systematic uncertainties have been combined in quadrature. During the recent period of data collection a new test of SAGE was made with a reactor-produced {sup 37}Ar neutrino source. The ratio of observed to calculated rates in this experiment, combined with the measured rates in the three prior {sup 51}Cr neutrino-source experiments with Ga, is 0.88 {+-} 0.05. A probable explanation for this low result is that the cross section for neutrino capture by the two lowest-lying excited states in {sup 71}Ge has been overestimated. If we assume these cross sections are zero, then the standard solar model including neutrino oscillations predicts a total capture rate in Ga in the range of 63--67 SNU with an uncertainly of about 5%, in good agreement with experiment. We derive the current value of the pp neutrino flux produced in the Sun to be {phi}{sup {circle_dot}}{sub pp} = (6.1 {+-} 0.8) x 10{sup 10}/(cm{sup 2} s), which agrees well with the flux predicted by the standard solar model. Finally, we make several tests and show that the data are consistent with the assumption that the solar neutrino production rate is constant in time.

Elliott, Steven Ray [Los Alamos National Laboratory

2008-01-01T23:59:59.000Z

88

An experiment to test the viability of a gallium-arsenide cathode in a SRF electron gun  

SciTech Connect (OSTI)

Strained gallium arsenide cathodes are used in electron guns for the production of polarized electrons. In order to have a sufficient quantum efficiency lifetime of the cathode the vacuum in the gun must be 10{sup -11} Torr or better, so that the cathode is not destroyed by ion back bombardment or through contamination with residual gases. All successful polarized guns are DC guns, because such vacuum levels can not be obtained in normal conducting RF guns. A superconductive RF gun may provide a sufficient vacuum level due to cryo-pumping of the cavity walls. We report on the progress of our experiment to test such a gun with normal GaAs-Cs crystals.

Kewisch,J.; Ben-Zvi, I.; Rao, T.; Burrill, A.; Pate, D.; Wu, Q.; Todd, R.; Wang, E.; Bluem, H.; Holmes, D.; Schultheiss, T.

2009-05-04T23:59:59.000Z

89

Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere  

SciTech Connect (OSTI)

An isotope tracer study, i.e., {sup 18}O/{sup 16}O exchange using {sup 18}O{sub 2} and H{sub 2}{sup 18}O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium–gallium–zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200?°C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for {sup 18}O{sub 2} than for H{sub 2}{sup 18}O. PDA in a humid atmosphere at 400?°C further suppressed the reactivity of O{sub 2} at the a-IGZO film surface, which is attributable to –OH-terminated surface formation.

Watanabe, Ken, E-mail: Watanabe.Ken@nims.go.jp [International Center for Young Scientists (ICYS-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan)] [International Center for Young Scientists (ICYS-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan); Lee, Dong-Hee [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan) [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan); Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Sakaguchi, Isao; Haneda, Hajime [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan)] [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan); Nomura, Kenji [Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)] [Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Kamiya, Toshio [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan) [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Hosono, Hideo [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan) [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Ohashi, Naoki, E-mail: Ohashi.Naoki@nims.go.jp [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan) [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)

2013-11-11T23:59:59.000Z

90

Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications  

SciTech Connect (OSTI)

The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of {approximately} 10{sup 4} shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10{sup 8} shots for electro-optic drivers. Much effort is currently being channeled in the study related to improvements of these two parameters high bias operation and lifetime improvement for switches used in pulsed power applications. The contact material and profiles are another important area of study. Although these problems are being pursued through the incorporation of different contact materials and introducing doping near contacts, it is important that the switch properties and the conduction mechanism in these switches be well understood such that the basic nature of the problems can be properly addressed. In this paper the authors report on these two basic issues related to the device operation, i.e., mechanisms for increasing the hold-off characteristics through neutron irradiation, and the analysis of transport processes at varying field conditions in trap dominated SI GaAs in order to identify the breakdown mechanism during device operation. It is expected that this study would result in a better understanding of photoconductive switches, specifically those used in high power operation.

ISLAM,N.E.; SCHAMILOGLU,E.; MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; JOSHI,R.P.

2000-05-30T23:59:59.000Z

91

Photon self-induced spin-to-orbital conversion in a terbium-gallium-garnet crystal at high laser power  

SciTech Connect (OSTI)

In this paper, we present experimental evidence of a third-order nonlinear optical process, self-induced spin-to-orbital conversion (SISTOC) of the photon angular momentum. This effect is the physical mechanism at the origin of the depolarization of very intense laser beams propagating in isotropic materials. The SISTOC process, like self-focusing, is triggered by laser heating leading to a radial temperature gradient in the medium. In this work we tested the occurrence of SISTOC in a terbium-gallium-garnet rod for an impinging laser power of about 100 W. To study the SISTOC process we used different techniques: polarization analysis, interferometry, and tomography of the photon orbital angular momentum. Our results confirm, in particular, that the apparent depolarization of the beam is due to the occurrence of maximal entanglement between the spin and orbital angular momentum of the photons undergoing the SISTOC process. This explanation of the true nature of the depolarization mechanism could be of some help in finding novel methods to reduce or to compensate for this usually unwanted depolarization effect in all cases where very high laser power and good beam quality are required.

Mosca, S.; De Rosa, R.; Milano, L. [Dipartimento di Scienze Fisiche, Universita di Napoli 'Federico II', Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy); INFN Sezione di Napoli, Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy); Canuel, B.; Genin, E. [EGO, European Gravitational Observatory, Via E. Amaldi, 56021 S. Stefano a Macerata, Cascina (Italy); Karimi, E. [Dipartimento di Scienze Fisiche, Universita di Napoli 'Federico II', Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy); Piccirillo, B.; Santamato, E. [Dipartimento di Scienze Fisiche, Universita di Napoli 'Federico II', Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy); CNISM-Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia, Napoli (Italy); Marrucci, L. [Dipartimento di Scienze Fisiche, Universita di Napoli 'Federico II', Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy); CNR-INFM Coherentia, Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy)

2010-10-15T23:59:59.000Z

92

CO{sub 2} laser-based dispersion interferometer utilizing orientation-patterned gallium arsenide for plasma density measurements  

SciTech Connect (OSTI)

A dispersion interferometer based on the second-harmonic generation of a carbon dioxide laser in orientation-patterned gallium arsenide has been developed for measuring electron density in plasmas. The interferometer includes two nonlinear optical crystals placed on opposite sides of the plasma. This instrument has been used to measure electron line densities in a pulsed radio-frequency generated argon plasma. A simple phase-extraction technique based on combining measurements from two successive pulses of the plasma has been used. The noise-equivalent line density was measured to be 1.7 × 10{sup 17} m{sup ?2} in a detection bandwidth of 950 kHz. One of the orientation-patterned crystals produced 13 mW of peak power at the second-harmonic wavelength from a carbon dioxide laser with 13 W of peak power. Two crystals arranged sequentially produced 58 mW of peak power at the second-harmonic wavelength from a carbon dioxide laser with 37 W of peak power.

Bamford, D. J.; Cummings, E. A.; Panasenko, D. [Physical Sciences Inc., 6652 Owens Drive, Pleasanton, California 94588 (United States)] [Physical Sciences Inc., 6652 Owens Drive, Pleasanton, California 94588 (United States); Fenner, D. B.; Hensley, J. M. [Physical Sciences Inc., 20 New England Business Center, Andover, Massachusetts 01810 (United States)] [Physical Sciences Inc., 20 New England Business Center, Andover, Massachusetts 01810 (United States); Boivin, R. L.; Carlstrom, T. N.; Van Zeeland, M. A. [General Atomics, P.O. Box 85608, San Diego, California 92186 (United States)] [General Atomics, P.O. Box 85608, San Diego, California 92186 (United States)

2013-09-15T23:59:59.000Z

93

Electrical Bias as an Alternate Method for Reproducible Measurement of Copper Indium Gallium Diselenide (CIGS) Photovoltaic Modules: Preprint  

SciTech Connect (OSTI)

Light-to-dark metastable changes in thin-film photovoltaic (PV) modules can introduce uncertainty when measuring module performance on indoor flash testing equipment. This study describes a method to stabilize module performance through forward-bias current injection rather than light exposure. Measurements of five pairs of thin-film copper indium gallium diselenide (CIGS) PV modules indicate that forward-bias exposure maintained the PV modules at a stable condition (within 1%) while the unbiased modules degraded in performance by up to 12%. It was additionally found that modules exposed to forward bias exhibited stable performance within about 3% of their long-term outdoor exposed performance. This carrier-injection method provides a way to reduce uncertainty arising from fast transients in thin-film module performance between the time a module is removed from light exposure and when it is measured indoors, effectively simulating continuous light exposure by injecting minority carriers that behave much as photocarriers do. This investigation also provides insight into the initial light-induced transients of thin-film modules upon outdoor deployment.

Deline, C.; Stokes, A.; Silverman, T. J.; Rummel, S.; Jordan, D.; Kurtz, S.

2012-08-01T23:59:59.000Z

94

Saddle-like deformation in a dielectric elastomer actuator embedded with liquid-phase gallium-indium electrodes  

SciTech Connect (OSTI)

We introduce a dielectric elastomer actuator (DEA) composed of liquid-phase Gallium-Indium (GaIn) alloy electrodes embedded between layers of poly(dimethylsiloxane) (PDMS) and examine its mechanics using a specialized elastic shell theory. Residual stresses in the dielectric and sealing layers of PDMS cause the DEA to deform into a saddle-like geometry (Gaussian curvature K<0). Applying voltage ? to the liquid metal electrodes induces electrostatic pressure (Maxwell stress) on the dielectric and relieves some of the residual stress. This reduces the longitudinal bending curvature and corresponding angle of deflection ?. Treating the elastomer as an incompressible, isotropic, NeoHookean solid, we develop a theory based on the principle of minimum potential energy to predict the principal curvatures as a function of ?. Based on this theory, we predict a dependency of ? on ? that is in strong agreement with experimental measurements performed on a GaIn-PDMS composite. By accurately modeling electromechanical coupling in a soft-matter DEA, this theory can inform improvements in design and fabrication.

Wissman, J., E-mail: jwissman@andrew.cmu.edu [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Finkenauer, L. [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Deseri, L. [DICAM, Department of Mechanical, Civil and Environmental Engineering, University of Trento, via Mesiano 77 38123 Trento (Italy); TMHRI-Department of Nanomedicine, The Methodist Hospital Research Institute, 6565 Fannin St., MS B-490 Houston, Texas 77030 (United States); Mechanics, Materials and Computing Center, CEE and ME-CIT, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Majidi, C. [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Robotics Institute and Department of Civil and Environmental Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

2014-10-14T23:59:59.000Z

95

Hort-Range Wetting at Liquid Gallium-Bismuth Alloy Surfaces: X-ray Measurements and Square-Gradient Theory  

SciTech Connect (OSTI)

We present an x-ray reflectivity study of wetting at the free surface of the binary liquid metal alloy gallium-bismuth (Ga-Bi) in the region where the bulk phase separates into Bi-rich and Ga-rich liquid phases. The measurements reveal the evolution of the microscopic structure of the wetting films of the Bi-rich, low-surface-tension phase along several paths in the bulk phase diagram. The wetting of the Ga-rich bulk's surface by a Bi-rich wetting film, the thickness of which is limited by gravity to only 50 Angstroms, creates a Ga-rich/Bi-rich liquid/liquid interface close enough to the free surface to allow its detailed study by x rays. The structure of the interface is determined with Angstromsngstrem resolution, which allows the application of a mean-field square gradient model extended by the inclusion of capillary waves as the dominant thermal fluctuations. The sole free parameter of the gradient model, the influence parameter K, that characterizes the influence of concentration gradients on the interfacial excess energy, is determined from our measurements. This, in turn, allows a calculation of the liquid/liquid interfacial tension, and a separation of the intrinsic and capillary wave contributions to the interfacial structure. In spite of expected deviations from MF behavior, based on the upper critical dimensionality (Du = 3 ) of the bulk, we find that the capillary wave excitations only marginally affect the short-range complete wetting behavior. A critical wetting transition that is sensitive to thermal fluctuations appears to be absent in this binary liquid-metal alloy.

Huber, P.; Shpyrko, O; Pershan, P; Ocko, B; DiMasi, E; Deutsch, M

2009-01-01T23:59:59.000Z

96

Sandia National Laboratories: gallium nitride  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1development Sandia,evaluatingfull module characterization HelioVoltphysicsgallium

97

Photoluminescence properties and energy levels of RE (RE?=?Pr, Sm, Er, Tm) in layered-CaZnOS oxysulfide  

SciTech Connect (OSTI)

RE{sup 3+} (RE?=?Pr, Sm, Er, Tm)-activated CaZnOS samples were prepared by a solid-state reaction method at high temperature, and their photoluminescence properties were investigated. Doping with RE{sup 3+} (RE?=?Pr, Sm, Er, Tm) into layered-CaZnOS resulted in typical RE{sup 3+} (RE?=?Pr, Sm, Er, Tm) f-f line absorptions and emissions, as well as the charge transfer band of Sm{sup 3+} at about 3.3?eV. The energy level scheme containing the position of the 4f and 5d levels of all divalent and trivalent lanthanide ions with respect to the valence and conduction bands of CaZnOS has been constructed based on the new data presented in this work, together with the data from literature on Ce{sup 3+} and Eu{sup 2+} doping in CaZnOS. The detailed energy level scheme provides a platform for interpreting the optical spectra and could be used to comment on the valence stability of the lanthanide ions in CaZnOS.

Zhang, Zhi-Jun, E-mail: zhangzj@mail.sic.ac.cn [Key Laboratory of Transparent Opto-Functional Inorganic Materials of Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai 200050 (China); Feng, Ang; Chen, Xiang-Yang [Key Laboratory of Transparent Opto-Functional Inorganic Materials of Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100039 (China); Zhao, Jing-Tai, E-mail: jtzhao@mail.sic.ac.cn [Key Laboratory of Transparent Opto-Functional Inorganic Materials of Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai 200050 (China); School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China)

2013-12-07T23:59:59.000Z

98

Electronic properties of gallium nitride nanowires  

E-Print Network [OSTI]

This thesis presents a systematic study of the electrical transport in GaN nanowires. Particularly, the effect of the surrounding dielectric on the conductivity of GaN nanowires is experimentally shown for the first time. ...

Yoon, Joonah

2008-01-01T23:59:59.000Z

99

Interactions of gallium with zircaloy cladding  

E-Print Network [OSTI]

CHAPTER I INTRODUCTION The accepted options for the disposition of weapons-grade plutonium (WGPu) are immobilization or conversion to a mixed-oxide (MOX) reactor fuel. There are two benefits of conversion, one, the plutonium can't be converted back... into a viable weapon and two, the material could be used as an energy producing natural resource. Typical reactors use uranium dioxide enriched with about 3'le U-235. The proposed MOX fuel would consist of depleted uranium with WGPu. In order...

Mitchell, Lee Josey

2012-06-07T23:59:59.000Z

100

Superconductive silicon nanowires using gallium beam lithography.  

SciTech Connect (OSTI)

This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

Henry, Michael David; Jarecki, Robert Leo,

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Self- and zinc diffusion in gallium antimonide  

E-Print Network [OSTI]

5, 265 (1957). S. Glasstone, K . Laidler, H . Eyring, Thequantity D . Henry Eyring [Glasstone, Eyring (1941)] was the

Nicols, Samuel Piers

2002-01-01T23:59:59.000Z

102

Designing Asynchronous Circuits in Gallium Arsenide  

E-Print Network [OSTI]

3.2.2 Super Buffered Fet Logic : : : : : : : : : : : : : : : : : 18 4 A New Logic Family 21 4.1 Input Stage : : : : : : : : : : : : : : : : : : : : : : : : : : : : 21 4.1.1 Inverter : : : : : : : : : : : : : : : : : : : : : : : : 34 5.2.2 Output stage : : : : : : : : : : : : : : : : : : : : : : : 36 5.2.3 Delay model and power

Martin, Alain

103

Rutherford backscattering analysis of gallium implanted 316 stainless steel  

E-Print Network [OSTI]

Experimental Procedure Sample Analysis 3 3 . 9 . 11 HI THEORY. . IH. 1 Backscattering Principles HI. 2 The RBS Spectrum IH. 3 The Surface Energy Approximation . . . HI. 4 Stainless Steel 316. . IV RESULTS AND DISCUSSION . . 13 . 13 15... for the disposition of weapons grade (WG) plutonium (Pu) in the United States: MOX fuel conversion and immobilization. The first option uses nuclear reactors to transmutate WG Pu and the second imbeds the WG Pu in glass logs for deep burial. Due to the large amount...

Ortensi, Javier

2012-06-07T23:59:59.000Z

104

amorphous indium gallium: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

on which all indium abundance studies are based, both for the quiet-sun and the sunspot umbra spectrum, employing standard atmosphere models and accounting for hyperfine structure...

105

Gallium Arsenide (GaAs) EDWARD D. PALIK  

E-Print Network [OSTI]

constants of pure (semi-insulating) GaAs are derived from a number of papers including the far-infrared at. [4]; the near-IR work of Pikhtin and Yas'kov [5]; the calorim- etry work of Christensen et al. [6 reflection work of Philipp and Ehrenreich [9]; and the synchrotron transmission work of Cardona et al. [10

Pulfrey, David L.

106

Broadband electrooptic modulators based on gallium arsenide materials  

E-Print Network [OSTI]

Optical Arbitrary Waveform Generation (OAWG) combines frequency combs and frequency-by- frequency pulse shapers to synthesize optical waveforms. The OAWG technique has a wide variety of applications, ranging from high ...

Shamir, Orit A

2012-01-01T23:59:59.000Z

107

Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals  

SciTech Connect (OSTI)

We report on the spatially selective formation of GaN nanocrystals embedded in GaAs. Broad-area N{sup +} implantation followed by rapid thermal annealing leads to the formation of nanocrystals at the depth of maximum ion damage. With additional irradiation using a Ga{sup +} focused ion beam, selective lateral positioning of the nanocrystals within the GaAs matrix is observed in isolated regions of increased vacancy concentration. Following rapid thermal annealing, the formation of zincblende GaN is observed in the regions of highest vacancy concentration. The nucleation of zincblende nanocrystals over the wurtzite phase of bulk GaN is consistent with the predictions of a thermodynamic model for the nanoscale size-dependence of GaN nucleation.

Wood, A. W. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Collino, R. R. [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Cardozo, B. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Naab, F. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States); Wang, Y. Q. [Materials Science and Technology Division, Los Alamos National Lab, Los Alamos, New Mexico 87545 (United States); Goldman, R. S. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2011-12-15T23:59:59.000Z

108

Self-aligned submicron gate length gallium arsenide MESFET  

E-Print Network [OSTI]

-biaserl saturation currents of 396. 67 + 83. 984 IzA were obtained for the transistors. Built- in voltages of 0. 8198 6 0. 007 V and ideality factors of 1. 456 6 0. 0079 were obtained for the Schottky diodes. The effect of gate length on transcond ictance... Geometrical and physical origins for the small signal equivalent circuit of FET Developed fabrication process for submicron gate length GaAs MESFET Transistor and Schottky diode mask patterns 10 13 15 16 18 19 21 23 23 25 25 32 34 18. Process...

Huang, Hsien-Ching

2012-06-07T23:59:59.000Z

109

Neutron irradiation effects on metal-gallium nitride contacts  

SciTech Connect (OSTI)

We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemical techniques. These studies reveal a 10{sup 15}?n/cm{sup 2} neutron threshold for Schottky barrier ideality factor increases, a 10{sup 15}?n/cm{sup 2} fast plus thermal neutron threshold for ohmic contact sheet and contact resistance increases, and 10{sup 16}?n/cm{sup 2} neutron fluence threshold for major device degradation identified with thermally driven diffusion of Ga and N into the metal contacts and surface phase changes. These results demonstrate the need for protecting metal-GaN contacts in device applications subject to neutron radiation.

Katz, Evan J.; Lin, Chung-Han; Zhang, Zhichun [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Qiu, Jie; Cao, Lei [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Mishra, Umesh K. [Departments of Electrical and Computer Engineering and Materials Science and Engineering University of California, Santa Barbara, California 93106 (United States); Brillson, Leonard J., E-mail: brillson.1@osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Physics and Center for Materials Research, The Ohio State University, Columbus, Ohio 43210 (United States)

2014-03-28T23:59:59.000Z

110

Neutron irradiation effects on gallium nitride-based Schottky diodes  

SciTech Connect (OSTI)

Depth-resolved cathodoluminescence spectroscopy (DRCLS), time-resolved surface photovoltage spectroscopy, X-ray photoemission spectroscopy (XPS), and current-voltage measurements together show that fast versus thermal neutrons differ strongly in their electronic and morphological effects on metal-GaN Schottky diodes. Fast and thermal neutrons introduce GaN displacement damage and native point defects, while thermal neutrons also drive metallurgical reactions at metal/GaN interfaces. Defect densities exhibit a threshold neutron fluence below which thermal neutrons preferentially heal versus create new native point defects. Scanning XPS and DRCLS reveal strong fluence- and metal-dependent electronic and chemical changes near the free surface and metal interfaces that impact diode properties.

Lin, Chung-Han; Katz, Evan J.; Zhang, Zhichun [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States); Qiu, Jie; Cao, Lei [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)] [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Mishra, Umesh K. [Departments of Electrical and Computer Engineering and Materials Science and Engineering, University of California, Santa Barbara, California 93106 (United States)] [Departments of Electrical and Computer Engineering and Materials Science and Engineering, University of California, Santa Barbara, California 93106 (United States); Brillson, Leonard J. [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States) [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States); Department of Physics and Center for Materials Research, The Ohio State University, Columbus, Ohio 43210 (United States)

2013-10-14T23:59:59.000Z

111

Superconductivity in gallium-substituted Ba8Si46 clathrates  

E-Print Network [OSTI]

superconductor, with an onset at T-C approximate to 3.3 K. For x=10 and higher, no superconductivity was observed down to T=1.8 K. This represents a strong suppression of superconductivity with increasing Ga content, compared to Ba8Si46 with T-C approximate to 8...

Li, Yang; Zhang, Ruihong; Liu, Yang; Chen, Ning; Luo, Z. P.; Ma, Xingqiao; Cao, Guohui; Feng, Z. S.; Hu, Chia-Ren; Ross, Joseph H., Jr.

2007-01-01T23:59:59.000Z

112

Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode  

E-Print Network [OSTI]

metallization process ivas required because separate potentials must be apphed to the top and base ol' the defined mesas. A potent&al is apphed to the top of the mesas to inject carriers for tunneling through the douhle barrier heterostructures A. rectifying... was a demetal/degrease cleanup process which re- moved any contamination that may have been nn the wal'er. This process ivas followed by deposition of AuGe/Ni on the ivafer's backside which ivill provide an ohmic contact after annealing. The backside...

Kinard, William Brian

1989-01-01T23:59:59.000Z

113

Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices  

SciTech Connect (OSTI)

Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry-leading uptime enabled in part by a novel in-situ cleaning process developed in this program.

Patibandla, Nag; Agrawal, Vivek

2012-12-01T23:59:59.000Z

114

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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115

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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116

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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117

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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118

Sandia National Laboratories: BES Web Highlight: Single-mode gallium  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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119

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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120

Local environment and composition of magnesium gallium layered double  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Sandia National Laboratories: copper-indium-gallium-[di]selenide-based  

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122

Electrochemical Solution Growth: Gallium Nitride Crystal Growth - Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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123

High-Quality, Low-Cost Bulk Gallium Nitride Substrates  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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124

Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate |  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Year in3.pdfEnergy Health andofIanJenniferLeslie Pezzullo:

125

Development of a 3-Dimensional Dosimetry System for Leksell Gamma Knife-Perfexion  

E-Print Network [OSTI]

The purpose of our study is to develop a new, 3-dimensional dosimetry system to verify the accuracy of dose deliveries in Leksell Gamma Knife-Perfexion TM (LGKP) (Elekta, Norcross, GA, USA). The instrument consists of a moving head phantom, an embedded thin active layer and a CCD camera system and was designed to be mounted to LGKP. As an active material concentrically located in the hemispheric head phantom, we choose Gafchromic EBT3 films and Gd2O2S;Tb phosphor sheets for dosimetric measurements. Also, to compensate the lack of backscatter, we located a 1 cm thick PMMA plate downstream of the active layer. The PMMA plate was transparent for scintillation lights to reach the CCD with 1200x1200 pixels by a 5.2 um pitch. Using this system, three hundred images by a 0.2 mm slice gap were acquired under each of three collimator setups, i.e. 4 mm, 8 mm, and 16 mm, respectively. The 2D projected images taken by CCD camera were compared with the dose distributions measured by EBT3 films in the same conditions. All ...

Yoon, KyoungJun; Lee, DoHeui; Cho, ByungChul; Lee, SangWook; Ahn, SeungDo

2015-01-01T23:59:59.000Z

126

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1996. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar in research and development, specialty alloys, and other applications. Optoelectronic devices were used

127

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2006. One company in Utah  

E-Print Network [OSTI]

circuits. Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

128

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1998. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

129

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2000. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

130

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2003. One company in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, and solar cells, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

131

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2012. One company in Utah  

E-Print Network [OSTI]

consumed was used in integrated circuits (ICs). Optoelectronic devices, which include laser diodes, light. Optoelectronic devices were used in areas such as aerospace, consumer goods, industrial equipment, medical

132

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2008. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

133

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2001. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, and solar cells, specialty alloys, and other applications. Optoelectronic devices were used in areas such as consumer goods

134

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2005. One company in Utah  

E-Print Network [OSTI]

circuits. Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

135

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2007. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

136

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2009. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

137

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2010. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

138

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1999. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

139

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2011. One company in Utah  

E-Print Network [OSTI]

consumed was used in integrated circuits (ICs). Optoelectronic devices, which include laser diodes, light% was used in research and development, specialty alloys, and other applications. Optoelectronic devices were

140

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1997. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2004. One company in Utah  

E-Print Network [OSTI]

consumed was used in optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes% was used in research and development, specialty alloys, and other applications. Optoelectronic devices were

142

Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films  

E-Print Network [OSTI]

74 (19) 2821 (1999). F. H. Spedding, Rare-earth Elements, inby the use of rare- earth elements as color emitters inpowders activated with rare-earth elements Eu 3+ , Tb 3+ ,

Tao, Jonathan Huai-Tse

2010-01-01T23:59:59.000Z

143

Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films  

E-Print Network [OSTI]

residential lighting using incandescent lights [2], as shownenergy used for the incandescent lamp is wasted as infraredlight source to replace incandescent lighting [1]. Figure

Tao, Jonathan Huai-Tse

2010-01-01T23:59:59.000Z

144

SAGE: Solar Neutrino Data from SAGE, the Russian-American Gallium Solar Neutrino Experiment  

DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

SAGE is a solar neutrino experiment based on the reaction 71Ga + n goes to 71Ge + e-. The 71Ge atoms are chemically extracted from a 50-metric ton target of Ga metal and concentrated in a sample of germane gas mixed with xenon. The atoms are then individually counted by observing their decay back to 71Ga in a small proportional counter. The distinguishing feature of the experiment is its ability to detect the low-energy neutrinos from proton-proton fusion. These neutrinos, which are made in the primary reaction that provides the Sun's energy, are the major component of the solar neutrino flux and have not been observed in any other way. To shield the experiment from cosmic rays, it is located deep underground in a specially built facility at the Baksan Neutrino Observatory in the northern Caucasus mountains of Russia. Nearly 100 measurements of the solar neutrino flux have been made during 1990-2000, and their combined result is a neutrino capture rate that is well below the prediction of the Standard Solar Model. The significant suppression of the solar neutrino flux that SAGE and other solar neutrino experiments have observed gives a strong indication for the existence of neutrino oscillations. [copied from the SAGE homepage at http://ewi.npl.washington.edu/SAGE/SAGE.html

SAGE Collaboration

145

Non-Destructive Spent Fuel Characterization with Semi-Conducting Gallium Arsinde Neutron Imaging Arrays  

SciTech Connect (OSTI)

High resistivity bulk grown GaAs has been used to produce thermal neutron imaging devices for use in neutron radiography and characterizing burnup in spent fuel. The basic scheme utilizes a portable Sb/Be source for monoenergetic (24 keV) neutron radiation source coupled to an Fe filter with a radiation hard B-coated pixellated GaAs detector array as the primary neutron detector. The coated neutron detectors have been tested for efficiency and radiation hardness in order to determine their fitness for the harsh environments imposed by spent fuel. Theoretical and experimental results are presented, showing detector radiation hardness, expected detection efficiency and the spatial resolution from such a scheme. A variety of advanced neutron detector designs have been explored, with experimental results achieving 13% thermal neutron detection efficiency while projecting the possibility of over 30% thermal neutron detection efficiency.

Douglas S. McGregor; Holly K. Gersch; Jeffrey D. Sanders; John C. Lee; Mark D. Hammig; Michael R. Hartman; Yong Hong Yang; Raymond T. Klann; Brian Van Der Elzen; John T. Lindsay; Philip A. Simpson

2002-01-30T23:59:59.000Z

146

The marine geochemistry of dissolved gallium: A comparison with dissolved aluminum  

SciTech Connect (OSTI)

Dissolved Ga concentrations in the pacific Ocean range from 2 to 30 picomolar: they are low in surface waters (2-12 pM), with a subsurface maximum at 150-300 m (6-17 pM), a mid-depth minimum from 500 to 1,000 m (4-10 pM) and increasing values with depth to a maximum in the bottom waters (12-30 pM). The highest concentrations are in the central gyre, with lower values toward the north and east where productivity and particle scavenging increase. Dissolved Ga concentrations in the surface waters of the northwest Atlantic are nearly an order of magnitude higher than in the central North pacific, with higher values in the Gulf Stream than in the continental slope boundary region. The vertical distributions and horizontal transects indicate three sources of dissolved Ga to the oceans. The surface distribution reflects an eolian source with no net fluvial input to the open ocean; the subsurface maximum (a feature not seen for North Pacific dissolved Al) is attributed to vertical exchange processes; the source for the deep waters of the North Pacific is from a sediment surface remineralization process or a pore water flux. Scavenging removal throughout the water column is evident in the vertical profiles for both dissolved Ga and Al, with intensified removal in the boundary regions where productivity and particle scavenging are at a maximum. Residence times of dissolved Ga in surface waters are nearly an order of magnitude longer than the corresponding values for Al.

Orians, K.J.; Bruland, K.W. (Univ. of California, Santa Cruz (USA))

1988-12-01T23:59:59.000Z

147

Tungsten-incorporation induced red-shift in the bandgap of gallium oxide thin films  

SciTech Connect (OSTI)

Tungsten (W) incorporated Ga{sub 2}O{sub 3} films were produced by co-sputter deposition. W-concentration was varied by the applied sputtering-power. The structure and optical properties of W-incorporated Ga{sub 2}O{sub 3} films were evaluated using X-ray diffraction, scanning electron microscopy, and spectrophotometric measurements. No secondary phase formation was observed in W-incorporated Ga{sub 2}O{sub 3} films. W-induced effects were significant on the structure and optical properties of Ga{sub 2}O{sub 3} films. The bandgap of Ga{sub 2}O{sub 3} films without W-incorporation was {approx}5 eV. Red-shift in the bandgap was noted with increasing W-concentration indicating the electronic structure changes in W-Ga{sub 2}O{sub 3} films. A functional relationship between W-concentration and optical property is discussed.

Rubio, E. J.; Ramana, C. V. [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)] [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)

2013-05-13T23:59:59.000Z

148

Radiation-Hardened Gallium Nitride Detector and Arrays for Fusion Diagnostics  

SciTech Connect (OSTI)

This poster reports testing to confirm that GaN devices exhibit the extreme radiation hardness needed for use at the NIF, functioning properly after 1x10{sup 12} protons/cm{sup 2} proton irradiation in one year.

Sun, K. X., and MacNeil, L.

2011-09-08T23:59:59.000Z

149

Process development for the fabrication of monolithic optoelectronic resonators on gallium arsenide substrates  

E-Print Network [OSTI]

loss microwave structure, were electroplated on the uncovered regions of the Au-Ge and Ni. After photoresist removal, the Au-Ge and Ni layers were removed from the unwanted regions. A backside metal was deposited and the sample was annealed. The four... D. Electron Bes. m Evaporation E. Fabrication of Photolithographic Masks 1, Plain Ring Resonator Mask 2. Notched Resons. tor Mask 3. Linear Resonator Mask 4. Slit Ring Resonator Mask F. Photolithography G. Electroplating H. Layer Removals I...

Fairchild, Brock Wilson

1990-01-01T23:59:59.000Z

150

E-Print Network 3.0 - aluminium gallium indium Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

An advanced diffusion model to identify emergent research issues: the case of optoelectronic devices Summary: Aluminium arsenides Ge-Si alloys Avalanche photodiodes Indium...

151

The determination of titanium, germanium and gallium by charged particle activation analysis  

E-Print Network [OSTI]

V FWHM for the 1. 332 MeV y-ray of Co; Peak-to-Compton ratio: 20. 1; 60 Efficiency relative to a 3 x 3 inch NaI (Tl) detector for the 1. 332 MeV y-ray measured at 25 cm distance: 3 05%%d Data Ac uisition and Processin Data was acquired via a 4096... of the reaction had to be sufficiently high to make measurements of ppm level concentrations feasible. The thick target yields were calculated by correlating the activities of the particular Y-rays 16 back to the time at the end of the irradiation...

Novak, Leo Robert

1975-01-01T23:59:59.000Z

152

The equilibrium state of hydrogen in gallium nitride: Theory and experiment  

SciTech Connect (OSTI)

Formation energies and vibrational frequencies for H in wurtzite GaN were calculated from density functional theory and used to predict equilibrium state occupancies and solid solubilities for p-type, intrinsic, and n-type material. The solubility of deuterium (D) was measured at 600--800 C as a function of D{sub 2} pressure and doping and compared with theory. Agreement was obtained by reducing the H formation energies 0.2 eV from ab-initio theoretical values. The predicted stretch-mode frequency for H bound to the Mg acceptor lies 5% above an observed infrared absorption attributed to this complex. It is concluded that currently recognized H states and physical processes account for the equilibrium behavior of H examined in this work.

MYERS JR.,SAMUEL M.; WRIGHT,ALAN F.; PETERSEN,GARY A.; SEAGER,CARLETON H.; WAMPLER,WILLIAM R.; CRAWFORD,MARY H.; HAN,JUNG

2000-04-17T23:59:59.000Z

153

Diffusion, Uptake and Release of Hydrogen in p-type Gallium Nitride: Theory and Experiment  

SciTech Connect (OSTI)

The diffusion, uptake, and release of H in p-type GaN are modeled employing state energies from density-function theory and compared with measurements of deuterium uptake and release using nuclear-reaction analysis. Good semiquantitative agreement is found when account is taken of a surface permeation barrier.

MYERS JR.,SAMUEL M.; WRIGHT,ALAN F.; PETERSEN,GARY A.; WAMPLER,WILLIAM R.; SEAGER,CARLETON H.; CRAWFORD,MARY H.; HAN,JUNG

2000-06-27T23:59:59.000Z

154

Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits  

E-Print Network [OSTI]

and Applications, edited by T. M. Tritt, ( Kluwer Academic /and Applications, edited by T. M. Tritt, ( Kluwer Academic /and Applications, edited by T. M. Tritt, ( Kluwer Academic /

Bickford, Justin Robert

2008-01-01T23:59:59.000Z

155

Growth Kinetics and Doping of Gallium Nitride Grown by rf-Plasma Assisted Molecular Beam Epitaxy  

E-Print Network [OSTI]

Thomas H. Myers, Ph.D., Chair Larry E. Halliburton, Ph.D. Nancy C. Giles, Ph.D. Charter D. Stinespring Giles, Dr. Charter Stinespring, Dr. Larry Halliburton, and Dr. Mohindar Seehra. In addition, I would

Myers, Tom

156

Fabrication of an optically driven 10 GHz ring resonator on a gallium arsenide substrate  

E-Print Network [OSTI]

/D converters, optical detectors, dc to rf converters, and millimeter-wave or microwave generators. Photoconductors can be easily integrated with microelectronic devices as well as microwave circuits. Recently, an optically excited photoconductive switch... is the barrier height and y, is the electron affinity for the semiconductor. Current flow at a metal-semiconductor barrier is due mainly to majority carriers. The four major current transport methods are thermionic emission over the barrier, quantum...

McGregor, Douglas Scott

1989-01-01T23:59:59.000Z

157

Gallium-68 Bioorthogonal Tetrazine Polymers for the Multistep Labeling of Cancer Biomarkers /  

E-Print Network [OSTI]

M, Fox JM (2008) Tetrazine ligation: fast bioconjugationR, Hilderbrand SA (2008) Tetrazine-Based Cycloadditions:of Cancer Cells through a Tetrazine/trans- Cyclooctene

Nichols, Brandon Edward

2013-01-01T23:59:59.000Z

158

Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits  

E-Print Network [OSTI]

is limited by the cold-wall chamber design and the porousrepeatability. The cold-wall chamber design also limits the

Bickford, Justin Robert

2008-01-01T23:59:59.000Z

159

Gallium arsenide-based ternary compounds and multi-band-gap solar cell research  

SciTech Connect (OSTI)

Aim of this contract is the achievement of a high-efficiency, low-cost solar cell. The basic approach to the problem is centered upon the heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The growth technique employed is metalorganic chemical vapor deposition. The silicon wafer may serve as a mechanical substrate and ohmic contact for a single-junction device, or may contain a p-n junction of its own and form the bottom cell of a two junction tandem solar cell structure. The III-V material for the single-junction case is GaAs and for the two-junction case is either GaAlAs or GaAsP, either material having the proper composition to yield a band gap of approximately 1.7 eV. Results achieved in this contract include the following: (1) a 17.6% efficient GaAs-on-Si solar cell; (2) an 18.5% efficient GaAs-on-Si concentrator solar cell at 400 suns; (3) a 24.8% efficient GaAs-on-GaAs solar cell; (4) a 28.7% efficient GaAs-on-GaAs concentrator solar cell at 200 suns; (5) measurement of the effects of dislocation density and emitter doping on GaAs cells; and (6) improvements in the growth process to achieve reproducible thin AlGaAs window layers with low recombination velocities and environmental stability.

Vernon, S. (Spire Corp., Bedford, MA (United States))

1993-02-01T23:59:59.000Z

160

Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets  

SciTech Connect (OSTI)

We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

2014-09-21T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Heat treatment of bulk gallium arsenide using a phosphosilicate glass cap  

SciTech Connect (OSTI)

n-type bulk GaAs crystals, capped with chemically vapor-deposited phosphosilicate glass, were heat treated at temperatures in the range of 600 to 950 /sup 0/C. Measurements on Schottky diodes and solar cells fabricated on the heat-treated material, after removal of a damaged surface layer, show an increase in free-carrier concentration, in minority-carrier-diffusion length, and in solar-cell short-circuit current. The observed changes are attributed to a removal of lifetime-reducing acceptorlike impurities, defects, or their complexes.

Mathur, G.; Wheaton, M.L.; Borrego, J.M.; Ghandhi, S.K.

1985-05-15T23:59:59.000Z

162

Synthesis, characterization, and biotemplated assembly of indium nitride and indium gallium nitride nanoparticles  

E-Print Network [OSTI]

A low-temperature, ambient pressure solution synthesis of colloidal InN nanoparticles is presented. This synthesis utilizes a previously dismissed precursor and results in individual, non-aggregated nanoparticles with ...

Hsieh, Jennifer Chia-Jen

2010-01-01T23:59:59.000Z

163

amorphous indium-gallium-zinc oxide: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: alloy of composition correspond- ing to the metallic components of the superconduct- ing oxides respectivement. Abstract. - Previous quenching experiments on 2212...

164

The Hall mobility measurement of Liquid Phase Epitaxy grown aluminum gallium arsenide  

E-Print Network [OSTI]

allows lasing action at or above room temperature. The utility of AI?Ga& ?As is based on the close latti&e match to GaAs over a range of Al mole fraction between zero and one(Fig. 1)IS). This is significant since heterojunctions between s...-type by occupying the site normally orc?pi& d by th& gro?p V element, ar?l acting as a donor. For the p-type of AI?Ga& ?As. %1g was used as an i&np?ri&y. Fig. 10 and Fig. 11 show I he r&'lal ionship bet wc?n th& in&p?r&I& & o???& r?t ?&n??&l t he alorr&i& weight...

Choi, Young-Shig

2012-06-07T23:59:59.000Z

165

Gallium Arsenide-Based Readout Electronics Thomas J. Cunningham and Eric R. Fossum  

E-Print Network [OSTI]

susceptible to radiation and hot carrier damage than are MaS-based structures. This should result in increased;among these has been the construction of optical emitters such as LEDs and lasers, since efficient

Fossum, Eric R.

166

E-Print Network 3.0 - abdominal gallium-67 citrate Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of the Mg2+ Summary: Chapter iii Impact of the Mg2+ -citrate transporter CitM on heavy metal toxicity in Bacillus... M that is specific for the complex of citrate and Mg2+ but is...

167

Commercialization of gallium nitride nanorod arrays on silicon for solid-state lighting  

E-Print Network [OSTI]

One important component in energy usage is lighting, which is currently dominated by incandescent and fluorescent lamps. However, due to potentially higher efficiencies and thus higher energy savings, solid-state lighting ...

Wee, Qixun

2008-01-01T23:59:59.000Z

168

Dependence of carrier mobility on an electric field in gallium selenide crystals  

SciTech Connect (OSTI)

The dependence of the mobility of charge carriers on voltage has been studied in undoped GaSe single crystals and crystals doped with gadolinium; the latter crystals have exhibited various values of dark resistivity ({rho}{sub d.r} Almost-Equal-To 10{sup 4}-10{sup 8} {Omega} cm at 77 K) and of the doping level (N = 10{sup -5}, 10{sup -4}, 10{sup -3}, 10{sup -2}, and 10{sup -1} at %). It is established that the dependence of the charge-carrier mobility on the electric field applied to the sample E {<=} 10{sup 2} V/cm is observed in undoped high-resistivity GaSe crystals ({rho}{sub d.r} {>=} 10{sup 4} {Omega} cm) and in lightly doped GaSe crystals (N {<=} 10{sup -2} at %) in the region of T {<=} 150 K. It is found that this dependence is not related to heating of the charge carriers by an electric field; rather, it is caused by elimination of drift barriers as a result of injection.

Abdinov, A. Sh., E-mail: abdinov_axmed@yahoo.com; Babaeva, R. F., E-mail: Babaeva-Rena@yandex.ru; Rzayev, R. M. [Baku State University (Azerbaijan)

2012-06-15T23:59:59.000Z

169

High-Quality, Low-Cost Bulk Gallium Nitride Substrates | Department of  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Career Scientists'Montana.ProgramJulietip sheetK-4In 2013 many| Department HIGHImageDepartmentEnergy

170

Accelerated Testing of HT-9 with Zirconia Coatings Containing Gallium using  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc Documentation RUCProductstwrmrAre the Effects ofAbout ScienceAbout OakMeasurement

171

Nanovoid Formation and Annihilation in Gallium Nanodroplets under Lithiation-Delithiation Cycling  

E-Print Network [OSTI]

, United States Renewable Energy Laboratory, Institute of Physics, Chinese Academy of Sciences, Beijing-to-solid phase transition, forming a crystalline phase (LixGa) with 160% volume expansion. Owing to the uneven Li delithiation, the reverse phase transition occurred, accompanied with the nucleation and growth of a nanosized

Chen, Long-Qing

172

Gallium Safety in the Laboratory INEEL/CON-03-00078  

Office of Scientific and Technical Information (OSTI)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinan antagonist Journal Article: Crystal structureComposite--FOR IMMEDIATEDOEFinal R eport

173

Effect of Gallium Nitride Template Layer Strain on the Growth of  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed NewcatalystNeutronEnvironmentZIRKLE FRUITYear 1MATERIALSTiO2(110).

174

E-Print Network 3.0 - analysis gallium-67 lung Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ILD... , interstitial lung disease, texture analysis, co-occurrence matrix, computed tomography I. INTRODUCTION Computer... %. The aim of our work is to develop a novel texture ......

175

Gallium solar neutrino experiments: Absorption cross sections, neutrino spectra, and predicted event rates  

E-Print Network [OSTI]

solar neutrino sources with standard energy spectra, and for laboratory sources of 51 Cr and 37 Ar; the calculations include, where appropriate, the thermal energy of fusing solar ions and use improved nuclear the energy spectrum of solar neutrinos. Theoretical uncertainties are estimated for cross sections

Bahcall, John

176

Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films  

DOE Patents [OSTI]

Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

2014-11-04T23:59:59.000Z

177

The radiation bio-effects of gallum-72 on leukemic cells via a gallium-transferrin complex  

E-Print Network [OSTI]

of the beta is about 30'/o to 40'/o of the maximum energy. An anti-neutrino is emitted simultaneously, carrying the remainder of the energy. Values listed for beta energies are the maximum values unless otherwise stated (Cember 1996). Prominent beta...

Forbes, Christen Douglas

2012-06-07T23:59:59.000Z

178

The design, construction, and testing of a nuclear fuel rod thermal simulation system to study gallium/Zircaloy interactions  

E-Print Network [OSTI]

friends for their unending support and patience during this project. Thank you so much! NOMENCLATURE Abbreviations and Acronyms WGPu- weapons grade plutonium DOE- Department of Energy MOX- mixed oxide fuel WG MOX- weapons grade MOX fuel LWR- light... to be employed were immobilization and fissioning the WGPu as mixed oxide (MOX) fuel in commercial power reactors. Both approaches have many advantages and disadvantages and are currently being studied by scientists and engineers all over the world. The use...

Allison, Christopher Curtis

2012-06-07T23:59:59.000Z

179

Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride  

SciTech Connect (OSTI)

Al{sub 2}O{sub 3} films, HfO{sub 2} films, and HfO{sub 2}/Al{sub 2}O{sub 3} stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H{sub 2}/N{sub 2} plasma at 650 Degree-Sign C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 Degree-Sign C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 Degree-Sign C. The valence band and conduction band offsets (VBOs and CBOs) of the Al{sub 2}O{sub 3}/GaN and HfO{sub 2}/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations based on the electron affinity model and charge neutrality level model. Moreover, subsequent annealing had little effect on these offsets; however, the GaN band bending did change depending on the annealing and processing. An Al{sub 2}O{sub 3} layer was investigated as an interfacial passivation layer (IPL), which, as results suggest, may lead to improved stability, performance, and reliability of HfO{sub 2}/IPL/GaN structures. The VBOs were {approx}0.1 and 1.3 eV, while the deduced CBOs were 0.6 and 1.1 eV for HfO{sub 2} with respect to Al{sub 2}O{sub 3} and GaN, respectively.

Yang Jialing; Eller, Brianna S.; Zhu Chiyu; England, Chris; Nemanich, Robert J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

2012-09-01T23:59:59.000Z

180

Organometallic vapor-phase homoepitaxy of gallium arsenide assisted by a downstream hydrogen afterglow plasma in the growth region  

E-Print Network [OSTI]

of the trimeth- ylgallium (TMGa) for homoepitaxial GaAs. They found in direct comparison of the pure thermal-insulating) substrate is loaded into the depo- sition reactor of Fig. 1 without any chemical degreasing or polishing

Collins, George J.

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Silicon-germanium/gallium phosphide material in high power density thermoelectric modules. Final report, February 1980--September 1981  

SciTech Connect (OSTI)

This is the final report of work on the characterization of an improved Si-Ge alloy and the fabrication of thermoelectric devices. The improved Si-Ge alloy uses a small addition of GaP in n- and p- type 80 at.% Si-20 at.% Ge; this addition reduces the thermal conductivity, thereby increasing its figure of merit and conversion efficiency. The thermoelectric devices fabricated include multicouples intended for use in Radioisotope Thermoelectric Generators (RTGs) and ring-type modules intended for use with nuclear reactor heat sources. This report summarizes the effort in the material as well as the device areas and discusses individual phases of each area. Results should form basis for further effort.

Not Available

1981-12-31T23:59:59.000Z

182

Journal of Engineering Physics and Thermophysics, VoL 71, No..5, 1998 SIMULATION OF A GALLIUM ARSENIDE RUNNING  

E-Print Network [OSTI]

a single monolithic circuit are the main tendencies in the development of superhigh-frequency solid-GaAs-type semiconductors with transport of electrons between valleys [3 ] along with works in the field of creating HHT this constitutes the subject matter of this work. Model and Basic Relations. As was shown in a number of our works

Harilal, S. S.

183

DESIGN AND ANALYSIS OF AN INTEGRATED PULSE MODULATED S-BAND POWER AMPLIFIER IN GALLIUM NITRIDE PROCESS  

SciTech Connect (OSTI)

The design of power amplifiers in any semi-conductor process is not a trivia exercise and it is often encountered that the simulated solution is qualitatively different than the results obtained. Phenomena such as oscillation occurring either in-band or out of band and sometimes at subharmonic intervals, continuous spectrum noticed in some frequency bands, often referred to as chaos, and jumps and hysteresis effects can all be encountered and render a design useless. All of these problems might have been identified through a more rigorous approach to stability analysis. Designing for stability is probably the one area of amplifier design that receives the least amount of attention but incurs the most catastrophic of effects if it is not performed properly. Other parameters such as gain, power output, frequency response and even matching may suitable mitigation paths. But the lack of stability in an amplifier has no mitigating path. In addition to of loss of the design completely there are the increased production cycle costs, costs involved with investigating and resolving the problem and the costs involved with schedule slips or delays resulting from it. The Linville or Rollett stability criteria that many microwave engineers follow and rely exclusively on is not sufficient by itself to ensure a stable and robust design. It will be shown that the universal belief that unconditional stability is obtained through an analysis of the scattering matrix S to determine if 1 and |{Delta}{sub S}| < 1 is only part of the procedure and other tools must be used to validate the criteria. The research shown contributes to the state of the art by developing a more thorough stability design technique for designing amplifiers of any class, whether that be current mode or switch mode, than is currently undertaken with the goal of obtaining first pass design success.

STEVE SEDLOCK

2012-04-04T23:59:59.000Z

184

Förster Resonance Energy Transfer Mediated White-Light-Emitting Rhodamine Fluorophore Derivatives-Gamma Phase Gallium Oxide Nanostructures.  

E-Print Network [OSTI]

??The global lighting source energy consumption accounts for about 22% of the total electricity generated. New high-efficiency solid-state light sources are needed to reduce the… (more)

Chiu, Wan Hang Melanie

2012-01-01T23:59:59.000Z

185

An experimental study of the solubility of Gallium(III) oxide in HCl-bearing water vapour  

E-Print Network [OSTI]

at 200 °C at a pH of $4. The values are very similar to those estimated from data for geothermal wells

Devernal, Anne

186

GALLIUM NITRIDE INTEGRATED GAS/TEMPERATURE SENSORS FOR FUEL CELL SYSTEM MONITORING FOR HYDROGEN AND CARBON MONOXIDE  

E-Print Network [OSTI]

on field effect devices using catalytic metal gates on silicon carbide substrates has been reviewed (Spetz-10%) of transition metals such as copper, silver, and chromium (Feinstein et al 1997 and Pyke 1993). High temperature. Introduction Gas sensing and analysis based on gas adsorption on a catalytic metal surface has been extensively

187

Bismuth in gallium arsenide: Structural and electronic properties of GaAs{sub 1-x}Bi{sub x} alloys  

SciTech Connect (OSTI)

The structural and electronic properties of cubic GaAs{sub 1-x}Bi{sub x} alloys with bismuth concentration 0.0, 0.25, 0.50, 0.75 and 1.0 are studied using the 'special quasi-random structures' (SQS) approach of Zunger along with the generalized gradient approximation (GGA) and the Engel-Vosko generalized gradient approximation (EV-GGA). The lattice constant, bulk modulus, derivative of bulk modulus and energy gap vary with bismuth concentration nonlinearly. The present calculations show that the band gap decreases substantially with increasing bismuth concentration and that spin-orbit coupling influences the nature of bonding at high Bi concentrations. - Graphical abstract: Bowing effect of spin-orbit split-off band values versus Bi content with and without spin-orbit coupling for GaAs{sub 1-x}Bi{sub x} (at x=0.25, 0.50 and 0.75). Calculations are done with GGA. Highlights: Black-Right-Pointing-Pointer Structural and electronic properties of GaAs{sub 1-x}Bi{sub x} alloys were studied. Black-Right-Pointing-Pointer We present results of lattice constant, energy gap, bulk modulus and derivative. Black-Right-Pointing-Pointer The band gap decreases substantially with increasing Bi concentration. Black-Right-Pointing-Pointer Calculations of the density of states and charge densities are also presented. Black-Right-Pointing-Pointer We have performed calculations without and with spin-orbit coupling.

Reshak, Ali Hussain, E-mail: maalidph@yahoo.co.uk [School of Complex Systems, FFWP-South Bohemia University, Nove Hrady 37333 (Czech Republic); School of Material Engineering, Malaysia University of Perlis, P.O Box 77, d/a Pejabat Pos Besar, 01007 Kangar, Perlis (Malaysia); Kamarudin, H. [School of Material Engineering, Malaysia University of Perlis, P.O Box 77, d/a Pejabat Pos Besar, 01007 Kangar, Perlis (Malaysia); Auluck, S. [National Physical Laboratory Dr. KS Krishnan Marg, New Delhi 110012 (India); Kityk, I.V. [Electrical Engineering Department, Technological University of Czestochowa, Al. Armii Krajowej 17/19, Czestochowa (Poland)

2012-02-15T23:59:59.000Z

188

Physics based analytical modelling of Gallium Nitride(GaN) MESFET considering different ion implantation energy with high temperature annealing.  

E-Print Network [OSTI]

??A physics based analytical model of ion implanted GaN MESFET has been presented considering high temperature annealing effects. Choosing appropriate activation energy of impurity atoms,… (more)

Raghavan, Vinay

2015-01-01T23:59:59.000Z

189

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior  

SciTech Connect (OSTI)

In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

Yang, Tsung-Jui; Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shivaraman, Ravi; Speck, James S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States)

2014-09-21T23:59:59.000Z

190

Accomplishments | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

water. (NREL) 1991 Gallium Indium PhosphideGallium Arsenide Tandem Solar Cell: A light, highly efficient solar cell that has become the world's standard for powering...

191

Accelerated Testing of HT-9 with Zirconia Coatings Containing...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of HT-9 with Zirconia Coatings Containing Gallium using Raman Spectroscopy and XPS. Accelerated Testing of HT-9 with Zirconia Coatings Containing Gallium using Raman Spectroscopy...

192

Structure, Morphology, and Optical Properties of Amorphous and...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films. Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium...

193

On the Mass Eigenstate Composition of the 8B Neutrinos from the Sun  

E-Print Network [OSTI]

The present data of gallium experiments provide indirectly the only experimental limit on the fraction of $\

A. Kopylov; V. Petukhov

2006-08-14T23:59:59.000Z

194

Method for the chemical separation of GE-68 from its daughter Ga-68  

DOE Patents [OSTI]

The present invention is directed to a generator apparatus for separating a daughter gallium-68 radioisotope substantially free of impurities from a parent gernanium-68 radioisotope, including a first resin-containing column containing parent gernanium-68 radioisotope and daughter gallium-68 radioisotope, a source of first eluent connected to said first resin-containing column for separating daughter gallium-68 radioisotope from the first resin-containing column, said first eluent including citrate whereby the separated gallium is in the form of gallium citrate, a mixing space connected to said first resin-containing column for admixing a source of hydrochloric acid with said separated gallium citrate whereby gallium citrate is converted to gallium tetrachloride, a second resin-containing column for retention of gallium-68 tetrachloride, and, a source of second eluent connected to said second resin-containing column for eluting the daughter gallium-68 radioisotope from said second resin-containing column.

Fitzsimmons, Jonathan M.; Atcher, Robert W.

2010-06-01T23:59:59.000Z

195

Preparation of silicon substrates for gallium-arsenide solar cells by electron-beam-pulse processing. Annual technical report, March 15, 1980-March 15, 1981  

SciTech Connect (OSTI)

In the past year a process has been developed for creating high-quality epitaxial layers of germanium on silicon substrates using rapid heating and cooling with a pulsed electron beam. This single-crystal germanium coating is the key to the production of high efficiency GaAs solar cells on low-cost silicon substrates in an economical manner. Thin (less than or equal to 1 ..mu..m) layers of Ge have been deposited on Si wafers by chemical vapor deposition (CVD) in single-crystal form or by vacuum evaporation in amorphous or polycrystalline form. The CVD films have given the best results, with good crystallinity and electrical properties as deposited. A persistent problem with surface roughness in the as-deposited films has been overcome by pulsed electron beam melting of the near-surface region in time periods on the order of a microsecond. The brief molten period smooths the surface features without compromising the crystallinity, electrical properties, or interfacial abruptness of the Ge film. These layers are of a quality suitable for further evaluation by GaAs growth and cell processing in the next phase of the program. Pulsed electron beam processing also serves a vital function for the evaporated Ge films, which are melted by the beam and recrystallized on the Si substrates, epitaxial single crystal Ge layers result from amorphous or polycrystalline starting films. To date results have not been as satisfactory as for CVD films; contamination from several sources has been identified as a problem. Many of these sources have been eliminated, so that a decision on the intrinsic limitations of the evaporated film approach should be made in the near future.

Tobin, S.P.

1981-05-01T23:59:59.000Z

196

Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells  

E-Print Network [OSTI]

film photovoltaics [1]. This roughly doubling of efficiencyMJ photovoltaics. MJ solar cells achieve higher efficiencies

Fong, David Michael

2012-01-01T23:59:59.000Z

197

Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same  

DOE Patents [OSTI]

A method for forming a semi-conductor material is provided that comprises forming a donor substrate constructed of GaAs, providing a receiver substrate, implanting nitrogen into the donor substrate to form an implanted layer comprising GaAs and nitrogen. The implanted layer is bonded to the receiver substrate and annealed to form GaAsN and nitrogen micro-blisters in the implanted layer. The micro-blisters allow the implanted layer to be cleaved from the donor substrate.

Weng, Xiaojun; Goldman, Rachel S.

2006-06-06T23:59:59.000Z

198

Synthesis of Germanium-Gallium-Tellurium (Ge-Ga-Te) ceramics by ball-milling and sintering Mathieu Hubert, Elena Petracovschi, Xiang-Hua Zhang and Laurent Calvez*  

E-Print Network [OSTI]

, the semiconductor behavior of CdTe is exploited for the production of solar panels [1, 2], the rapid and reversibleSe3 [21, 22] glasses show a controllable crystallization behavior, enabling the production of glass

Paris-Sud XI, Université de

199

PHYSICAL REVIEW A 82, 043806 (2010) Photon self-induced spin-to-orbital conversion in a terbium-gallium-garnet crystal  

E-Print Network [OSTI]

`a di Napoli "Federico II", Complesso Universitario di Monte S. Angelo, 80126 Napoli, Italy 2 INFN Sezione di Napoli, Complesso Universitario di Monte S. Angelo, 80126 Napoli, Italy 3 EGO, European Gravitational Observatory, Via E. Amaldi, 56021 S. Stefano a Macerata, Cascina (PI), Italy 4 CNISM

Marrucci, Lorenzo

200

Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells  

E-Print Network [OSTI]

III! V Multijunction Solar Cells,” (2003). J. F. Geisz, etEfficiency Multi-Junction Solar Cells A thesis submitted inEfficiency Multi-Junction Solar Cells By David Michael Fong

Fong, David Michael

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination  

E-Print Network [OSTI]

of the display industry as it moves from liquid crystal to organic light emitting diode technology and with requirements for larger areas and higher resolutions. A number of alternative material systems to a-Si:H have emerged, including organic semiconductors...

Flewitt, Andrew J.; Powell, M.J.

2014-01-01T23:59:59.000Z

202

Gallium arsenide-based ternary compounds and multi-band-gap solar cell research. Annual subcontract report, 15 April 1988--14 June 1990  

SciTech Connect (OSTI)

Aim of this contract is the achievement of a high-efficiency, low-cost solar cell. The basic approach to the problem is centered upon the heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The growth technique employed is metalorganic chemical vapor deposition. The silicon wafer may serve as a mechanical substrate and ohmic contact for a single-junction device, or may contain a p-n junction of its own and form the bottom cell of a two junction tandem solar cell structure. The III-V material for the single-junction case is GaAs and for the two-junction case is either GaAlAs or GaAsP, either material having the proper composition to yield a band gap of approximately 1.7 eV. Results achieved in this contract include the following: (1) a 17.6% efficient GaAs-on-Si solar cell; (2) an 18.5% efficient GaAs-on-Si concentrator solar cell at 400 suns; (3) a 24.8% efficient GaAs-on-GaAs solar cell; (4) a 28.7% efficient GaAs-on-GaAs concentrator solar cell at 200 suns; (5) measurement of the effects of dislocation density and emitter doping on GaAs cells; and (6) improvements in the growth process to achieve reproducible thin AlGaAs window layers with low recombination velocities and environmental stability.

Vernon, S. [Spire Corp., Bedford, MA (United States)

1993-02-01T23:59:59.000Z

203

Gallium arsenide-based ternary compounds and multi-band-gap solar cell research. Final subcontract report, 1 April 1988--31 March 1990  

SciTech Connect (OSTI)

This report describes work to achieve a high-efficiency, low-cost solar cell. The basic approach to the problem is centered upon the heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The growth technique employed throughout this work is metal-organic chemical vapor deposition. The silicon wafer may serve as a mechanical substrate and ohmic contact for a single-junction device, or it may contain a p-n junction of its own and form the bottom cell of a two-junction tandem solar cell structure. The III-V material for the single-junction case is GaAs, and for the two-junction case it is either GaAlAs or GaAsP, either material having the proper composition to yield a band gap of approximately 1.7 eV. Results achieved in this contract include (1) a 17.6%-efficient GaAs-on-Si solar cell; (2) an 18.5%-efficient GaAs-on-Si concentrator solar cell at 400 suns; (3) a 24.8%-efficient GaAs-on-GaAs solar cell; (4) a 28.7%-efficient GaAs-on-GaAs concentrator solar cell at 200 suns; (5) the measurement of the effects of dislocation density and emitter doping on GaAs cells; and (6) improvements in the growth process to achieve reproducible thin AlGaAs window layers with low recombination velocities and environmental stability.

Vernon, S. [Spire Corp., Bedford, MA (United States)

1993-07-01T23:59:59.000Z

204

Exploration of Novel Reaction Pathway for Formation of Copper Indium Gallium Diselenide: Cooperative Research and Development Final Report, CRADA Number CRD-03-121  

SciTech Connect (OSTI)

The investigation will explore a potentially low-cost method of forming CIGS for use in solar cells. Investigators from HelioVolt will work in NREL laboratories to modify and apply our tools in fabrication of the CIGS layer. Investigators from NREL will assist in preparing substrates and in compleing solar cells composed of these CIGS layers to evaluate the effectiveness of the HelioVolt processes.

van Hest, M.

2014-11-01T23:59:59.000Z

205

Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes  

SciTech Connect (OSTI)

We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on the inverted Ga-polar surface.

Hosalli, A. M.; Van Den Broeck, D. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)

2013-12-02T23:59:59.000Z

206

IIl-nitride nanowires and heterostructures : growth and optical properties on nanoscale  

E-Print Network [OSTI]

Gallium nitride (GaN) and indium gallium nitride (InGaN) nanowires promise potential for further improving the electricity-to-light energy conversion efficiencies in light emitting diodes due to strain relaxation, reduced ...

Zhou, Xiang, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

207

2009 Minerals Yearbook U.S. Department of the Interior  

E-Print Network [OSTI]

As and gallium nitride (GaN) and was used in integrated circuits (ICs) and optoelectronic devices [laser diodes

208

2011 Minerals Yearbook U.S. Department of the Interior  

E-Print Network [OSTI]

Cs) and optoelectronic devices [laser diodes, light-emitting diodes (lEDs), photodetectors, and solar cells]. Gallium

209

In situ chemical sensing in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time  

E-Print Network [OSTI]

; accepted 14 June 2005; published 18 July 2005 Gallium nitride and its alloys promise to be key materials.1116/1.1993616 I. INTRODUCTION In recent years, gallium-nitride GaN - and aluminum- gallium-nitride AlGaN -based are grown at high temperatures e.g., up to 1100 °C using large concentrations of H2 carrier and NH3 N source

Rubloff, Gary W.

211

E-Print Network 3.0 - arsenide oxides sr2cro3feas Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Microstructures of gallium nitride nanowires synthesized by oxide-assisted method W.S. Shi, Y... synthesized using the recently developed oxide-assisted method by laser...

212

Photonic crystal light emitting diode.  

E-Print Network [OSTI]

?? This master's thesis describe electromagnetic simulations of a gallium antimonide (GaSb) light emitting diode, LED. A problem for such devices is that most of… (more)

Leirset, Erlend

2010-01-01T23:59:59.000Z

213

E-Print Network 3.0 - americium arsenides Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: of gallium arsenide, a semiconductor, which is used in advanced optoelectronics, lasers, microwave circuits... , and solar cells. To determine material...

214

E-Print Network 3.0 - adaptive nitride-based coatings Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

DELAUSANNE Summary: AND ELECTRONICS PROF. N. GRANDJEAN 33 III-NITRIDE BASED OPTOELECTRONIC DEVICES 34 GALLIUM NITRIDE-BASED 2D... FOR DIVERSE APPLICATIONS 84 HOLE ARRAY...

215

2012 Solid-State Lighting Manufacturing R&D Workshop Presentations...  

Broader source: Energy.gov (indexed) [DOE]

Frank Cerio, Veeco Instruments Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices Vivek Agrawal, Applied Materials Driving Down HB-LED Costs:...

216

The role of screening of the electron-phonon interaction in relaxation of photoexcited electron-hole plasma in semiconductors  

SciTech Connect (OSTI)

The role of screening of the interaction of the electron-hole plasma with optical phonons is analytically evaluated by the example of gallium arsenide.

Kumekov, S. E. [Kazakh National Technical University (Kazakhstan)], E-mail: skumekov@mail.ru

2008-08-15T23:59:59.000Z

217

E-Print Network 3.0 - anisotropy physics Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

physics Search Powered by Explorit Topic List Advanced Search Sample search results for: anisotropy physics Page: << < 1 2 3 4 5 > >> 1 Gallium crystallization: implication for the...

218

STATEMENT OF CONSIDERATIONS REQUEST BY CREE, INC. FOR AN ADVANCED...  

Broader source: Energy.gov (indexed) [DOE]

in the design and.manufacture of commercial semiconductor products utilizing silicon carbide and gallium nitride technologies. Cree states it is the owner or licensee to over 500...

219

STATEMENT OF CONSIDERATIONS REQUEST BY CREE, INC. FOR AN ADVANCED...  

Broader source: Energy.gov (indexed) [DOE]

in the design and manufacture of commercial semiconductor products utilizing silicon carbide and gallium nitride technologies. In addition Cree has more than 300 domestic patents...

220

High Temperature, High Voltage Fully Integrated Gate Driver Circuit  

Broader source: Energy.gov (indexed) [DOE]

temperature gate drive is being developed for use with future wide band gap (silicon carbide and gallium nitride) switching devices. * Universal drive that is capable of driving...

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

J O U R N A L O F C H E M I S T R Y  

E-Print Network [OSTI]

interactions in inhibiting the efficient widescale commercial utilization of polymeric electro for polymeric electro-optic modulators; however, in with devices fabricated from lithium niobate and gallium

Walba, David

222

Atomistic Study of the Melting Behavior of Single Crystalline...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and 110-oriented lateral facets, respectively. Citation: Wang Z, X Zu, F Gao, and WJ Weber.2007."Atomistic Study of the Melting Behavior of Single Crystalline Wurtzite Gallium...

223

THERMODYNAMICS OF SOLID AND LIQUID GROUP III-V ALLOYS  

E-Print Network [OSTI]

a high temperature heat capacity for liquid gallium which isthe molar heat capacity of the stoichiometric liquid and theheat capacity of the supercooled stoichiometric binary liquid

Anderson, T.J.

2011-01-01T23:59:59.000Z

224

E-Print Network 3.0 - aluminum alloys grain Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

aluminum... -lithium and aluminum-gallium has been studied. In ... Source: DOE Office of Energy Efficiency and Renewable Energy, Hydrogen, Fuel Cells and Infrastructure...

225

Tailored Ceramics for Laser Applications /  

E-Print Network [OSTI]

diffusion kinetics of rare-earth elements in YAG. . . .values for rare- earth elements in YAG. . . . . . . . . .6] D. J. Cherniak, “Rare earth element and gallium diffusion

Hollingsworth, Joel Philip

2013-01-01T23:59:59.000Z

226

DuPont Technology Breaks Away From Glass | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

technology that will let manufacturers of copper indium gallium selenide, or CIGS, solar cells and organic light emitting diodes, or OLED, displays protect products with...

227

Performance testing and Bayesian Reliability Analysis of small diameter, high power electric heaters for the simulation of nuclear fuel rod temperatures.  

E-Print Network [OSTI]

??The conversion of plutonium from a nuclear weapon to nuclear reactor fuel requires an evaluation of the residual gallium as a potential corrosive material within… (more)

O'Kelly, David Sean

2012-01-01T23:59:59.000Z

228

Energy Storage Systems 2010 Update Conference Presentations ...  

Broader source: Energy.gov (indexed) [DOE]

- Bulk Gallium Nitride Substrates - Karen Waldrip, SNL.pdf More Documents & Publications Energy Storage & Power Electronics 2008 Peer Review - Power Electronics (PE) Systems...

229

Sandia National Laboratories: Sandia Develops a Synthesis of...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Materials Science, News, News & Events, Office of Science, Research & Capabilities, Solid-State Lighting White light-emitting diodes (LEDs) based on blue indium-gallium-nitride...

230

aircraft exhaust plumes: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ocean before descending to the core. We report results of laboratory experiments-forming metals. Single gallium drop experiments and experiments on Rayleigh-Taylor instabilities...

231

aircraft plume model: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ocean before descending to the core. We report results of laboratory experiments-forming metals. Single gallium drop experiments and experiments on Rayleigh-Taylor instabilities...

232

ablation plume propagation: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ocean before descending to the core. We report results of laboratory experiments-forming metals. Single gallium drop experiments and experiments on Rayleigh-Taylor instabilities...

233

ablation plume expansion: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ocean before descending to the core. We report results of laboratory experiments-forming metals. Single gallium drop experiments and experiments on Rayleigh-Taylor instabilities...

234

ablation plume thermalization: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ocean before descending to the core. We report results of laboratory experiments-forming metals. Single gallium drop experiments and experiments on Rayleigh-Taylor instabilities...

235

ablation plume dynamics: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ocean before descending to the core. We report results of laboratory experiments-forming metals. Single gallium drop experiments and experiments on Rayleigh-Taylor instabilities...

236

Diamonds are an Electronic Device's Best Friend | Department...  

Broader source: Energy.gov (indexed) [DOE]

way to combine diamond films with two other materials important for advanced devices, graphene and gallium nitride. Graphene is a rising star of the materials science world, with...

237

Categorical Exclusion Determination Form  

Broader source: Energy.gov (indexed) [DOE]

of SubMIC components, including the proprietary PolyStrata micro-coaxial transformer, Gallium Nitride integrated circuits, and Complementary Metal-Oxide Semiconductors,...

238

Alta Devices Develops World Record Setting Thin-Film Solar Cell  

Office of Energy Efficiency and Renewable Energy (EERE)

EERE supported the development of Alta Devices' thin film Gallium Arsenide photovoltaic technology that set a world record for conversion efficiency.

239

CX-010895: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Development and Industrialization of Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Light Emitting Diodes LEDs on Patterned Sapphire Substrate (PSS) for Low Cost Emitter Architecture CX(s) Applied: B3.6 Date: 06/27/2013 Location(s): California Offices(s): National Energy Technology Laboratory

240

innovati nNREL Scientists Spurred the Success of Multijunction Solar Cells  

E-Print Network [OSTI]

innovati nNREL Scientists Spurred the Success of Multijunction Solar Cells Before 1984, many a solar cell can convert into electricity. Olson thought the focus should change to finding materials-winning gallium indium phosphide/gallium arsenide tandem solar cell, which had achieved record efficiencies, con

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network [OSTI]

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

242

This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE JOURNAL OF PHOTOVOLTAICS 1  

E-Print Network [OSTI]

as presented, with the exception of pagination. IEEE JOURNAL OF PHOTOVOLTAICS 1 Gallium Arsenide Solar Cell--Gallium arsenide, nanospheres, photovoltaic systems, whispering gallery modes (WGMs). I. INTRODUCTION THE route as the active layer is thinned [2]. Thin-film photovoltaics offer the possibility to significantly reduce

Atwater, Harry

243

Preparation of CIGS-based solar cells using a buffered electrodeposition bath  

DOE Patents [OSTI]

A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

Bhattacharya, Raghu Nath (Littleton, CO)

2007-11-20T23:59:59.000Z

244

Induced Optical Losses in Optoelectronic Devices due to Focused Ion Beam Damages  

E-Print Network [OSTI]

A study of damages caused by gallium focused ion beam (FIB) into III-V compounds is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analysis shows that local heating is negligible. Gallium implantation is shown to occur over areas tens of nanometers thick. Gallium accumulation as well as selective sputtering during III-V compounds milling is expected. Particularly, for GaAs, this effect leads to gallium segregation and formation of metallic clusters. Microdisk resonators were fabricated using FIB milling with different emission currents to analyze these effects on a device. It is shown that for higher emission current, thus higher implantation doses, the cavity quality factor rapidly decreases due to optical scattering losses induced by implanted gallium atoms.

Vallini, Felipe; Reis, Elohim Fonseca dos; von Zuben, Antônio Augusto; Frateschi, Newton Cesário

2012-01-01T23:59:59.000Z

245

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

246

Applied Materials Develops an Advanced Epitaxial Growth System to Bring Down LED Costs  

Broader source: Energy.gov [DOE]

With the help of DOE funding, Applied Materials has developed an advanced epitaxial growth system for gallium nitride (GaN) LED devices that decreases operating costs, increases internal quantum efficiency, and improves binning yields.

247

A compact transport and charge model for GaN-based high electron mobility transistors for RF applications  

E-Print Network [OSTI]

Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are rapidly emerging as front-runners in high-power mm-wave circuit applications. For circuit design with current devices and to allow sensible future ...

Radhakrishna, Ujwal

2013-01-01T23:59:59.000Z

248

2338 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 30, NO. 4, APRIL 2015 Optically Switched-Drive-Based Unified Independent  

E-Print Network [OSTI]

as well. Index Terms--Active gate drive, di/dt, dv/dt, electromagnetic interference (EMI), gallium. However, this leads to higher di/dt and dv/dt, which in turn, causes higher electromagnetic interference

Mazumder, Sudip K.

249

A-15 Superconducting composite wires and a method for making  

DOE Patents [OSTI]

A method for fabricating superconducting wires wherein a billet of copper containing filaments of niobium or vanadium is rolled to form a strip which is wrapped about a tin-alloy core to form a composite. The alloy is a tin-copper alloy for niobium filaments and a gallium-copper alloy for vanadium filaments. The composite is then drawn down to a desired wire size and heat treated. During the heat treatment process, the tin in the bronze reacts with the niobium to form the superconductor niobium tin. In the case where vanadium is used, the gallium in the gallium bronze reacts with the vanadium to form the superconductor vanadium gallium. This new process eliminates the costly annealing steps, external tin plating and drilling of bronze ingots required in a number of prior art processes.

Suenaga, Masaki (Bellport, NY); Klamut, Carl J. (East Patchogue, NY); Luhman, Thomas S. (Westhampton Beach, NY)

1984-01-01T23:59:59.000Z

250

Wrapping process for fabrication of A-15 superconducting composite wires  

DOE Patents [OSTI]

A method for fabricating superconducting wires wherein a billet of copper containing filaments of niobium or vanadium is rolled to form a strip which is wrapped about a tin-alloy core to form a composite. The alloy is a tin-copper alloy for niobium filaments and a gallium-copper alloy for vanadium filaments. The composite is then drawn down to a desired wire size and heat treated. During the heat treatment process, the tin in the bronze reacts with the niobium to form the superconductor niobium tin. In the case where vanadium is used, the gallium in the gallium bronze reacts with the vanadium to form the superconductor vanadium gallium. This new process eliminates the costly annealing steps, external tin plating and drilling of bronze ingots required in a number of prior art processes.

Suenaga, M.; Klamut, C.J.; Luhman, T.S.

1980-08-15T23:59:59.000Z

251

U.S. GEOLOGICAL SURVEY--MINERALS INFORMATION 1 By Deborah A. Kramer  

E-Print Network [OSTI]

). to produce optoelectronic devices and integrated circuits for Increased demand for GaAs resulted in several U. Consumption Optoelectronic devices continued to be the largest end use for gallium, with 59% of total

252

Long-Term Performance Data and Analysis of CIS/CIGS Modules Deployed Outdoors (Presentation)  

SciTech Connect (OSTI)

The long-term performance data of copper indium diselenide (CIS) and gallium-alloyed CIS (CIGS) photovoltaic (PV) modules are investigated to assess the reliability of this technology.

del Cueto, J. A.; Kroposki, B.; Rummel, S.; Anderberg, A.

2008-08-10T23:59:59.000Z

253

Calendar | OSTI, US Dept of Energy, Office of Scientific and...  

Office of Scientific and Technical Information (OSTI)

Application Center 2014-10-16 13:32 Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices 2014-10-16 13:32 CHEMICAL ANALYSIS OF SIMULATED HIGH LEVEL WASTE...

254

2H NMR | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

NMR Leads No leads are available at this time. Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR...

255

EMSL - 2H NMR  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

tags2h-nmr en Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR http:www.emsl.pnl.govemslweb...

256

EMSL - In situ catalysis  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

situ-catalysis en Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR http:www.emsl.pnl.govemslweb...

257

In situ catalysis | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Leads No leads are available at this time. Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR...

258

E-Print Network 3.0 - all-solid-state dye-sensitized solar Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

spectrum Poly-Si CdTe CIGS (Copper-Indium-Gallium-Selenide) Organic and Dye-Sensitized Solar Cells 12;Cd... ;Light Concentration using Nanoparticle Plasmon Resonances 12;Dye...

259

CX-004937: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Transphorm, Inc. -High Performance Gallium Nitride High Electron Mobility Transistor Modules for Agile Power ElectronicsCX(s) Applied: B3.6Date: 08/05/2010Location(s): CaliforniaOffice(s): Advanced Research Projects Agency - Energy

260

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

E-Print Network 3.0 - antimony pyrochlore-type oxides Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Source," Rev. Sci. Instrum. 50, 84 (1979). See also... . Wright, S. and Kroemer, H., "Reduction of Oxides on Silicon by Heating in a Gallium Molecular Beam at 800... .' Bean, J....

262

Association between oxygen vacancies and trivalent dopants in crystalline and amorphous ZnO  

E-Print Network [OSTI]

Density functional theory calculations are used to investigate the structure and binding energies of clusters formed between oxygen vacancies and trivalent dopant atoms (indium, gallium and aluminium) substituted into zinc oxide. Our results show...

Muñoz Ramo, D.; Chroneos, A.; Rushton, M. J. D.; Bristowe, P .D.

2014-03-31T23:59:59.000Z

263

Barrier Coatings for Thin Film Solar Cells: Final Subcontract Report, September 1, 2002 -- January 30, 2008  

SciTech Connect (OSTI)

This program has involved investigations of the stability of CdTe and copper-indium-gallium-diselenide (CIGS) solar cells under damp heat conditions and effects of barrier coatings.

Olsen, L. C.

2010-03-01T23:59:59.000Z

264

MOCVD growth of In GaP-based heterostructures for light emitting devices  

E-Print Network [OSTI]

In this work, we examine fundamental materials processes in the growth of indium gallium phosphide (InGaP) via metalorganic chemical vapor deposition (MOCVD). In particular, we realize improvements in the epitaxial integration ...

McGill, Lisa Megan, 1975-

2004-01-01T23:59:59.000Z

265

CX-010873: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Ammonothermal Bulk Gallium Nitride Crystal Growth for Energy Efficient Lightning and Power Electronics CX(s) Applied: B3.6 Date: 05/22/2013 Location(s): California Offices(s): Advanced Research Projects Agency-Energy

266

OBSERVATOIRE DE GRENOBLE LABORATOIRE DE GEOPHYSIQUE INTERNE ET TECTONOPHYSIQUE  

E-Print Network [OSTI]

source d'´energie la plus probable de la g´eodynamo, qui entretient le champ magn´etique de la plan´elisation de l'´ecou- lement convectif sans champ d'un m´etal liquide (le gallium), `a grand for¸cage thermique, and aims at modelling the non-magnetic convective flow of a spherical shell of liquid metal (gallium

Boyer, Edmond

267

Metal organic chemical vapor deposition of 111-v compounds on silicon  

DOE Patents [OSTI]

Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

Vernon, Stanley M. (Wellesley, MA)

1986-01-01T23:59:59.000Z

268

InAs quantum wire induced composition modulation in an In{sub 0.53}Ga{sub 0.37}Al{sub 0.10}As barrier layer grown on an InP substrate  

SciTech Connect (OSTI)

Composition modulations are observed by transmission electron microscopy in In{sub 0.53}Ga{sub 0.37}Al{sub 0.10}As barrier layers that overgrow both single- and multilayer InAs quantum wire structures grown on an InP substrate. Indium-rich (gallium-deficient) regions were observed in the region of the barrier layer lying directly above individual quantum wires, while indium-deficient (gallium-rich) regions were detected in the barrier above the gaps between adjacent underlying quantum wires. The magnitude of such modulation was typically 7% (atomic percent) for both indium and gallium as estimated from the energy dispersive x-ray analysis. The origin of such composition modulations was determined by modeling the chemical potential distribution for indium and gallium on the growth front of the barrier layer at the initial capping stage of the quantum wires with finite element simulations. It is found that the number and positions of the indium-rich regions are determined by the combined effects of strain and surface energy distributions on the barrier material capping the quantum wires. Moreover the estimated magnitudes of the composition modulation for both indium and gallium from the finite element models are in good agreement with the experimental observations. This method provides a simple way to understand the origin of, and to estimate the magnitude of the quantum wire-induced composition modulation in the barrier layer.

Cui, K. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Robinson, B. J. [Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Thompson, D. A. [Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2010-08-15T23:59:59.000Z

269

Preliminary materials assessment for the Satellite Power System (SPS)  

SciTech Connect (OSTI)

Presently, there are two SPS reference design concepts (one using silicon solar cells; the other using gallium arsenide solar cells). A materials assessment of both systems was performed based on the materials lists set forth in the DOE/NASA SPS Reference System Report: Concept Development and Evaluation Program. This listing identified 22 materials (plus miscellaneous and organics) used in the SPS. Tracing the production processes for these 22 materials, a total demand for over 20 different bulk materials (copper, silicon, sulfuric acid, etc.) and nealy 30 raw materials (copper ore, sand, sulfur ore, etc.) was revealed. Assessment of these SPS material requirements produced a number of potential material supply problems. The more serious problems are those associated with the solar cell materials (gallium, gallium arsenide, sapphire, and solar grade silicon), and the graphite fiber required for the satellite structure and space construction facilities. In general, the gallium arsenide SPS option exhibits more serious problems than the silicon option, possibly because gallium arsenide technology is not as well developed as that for silicon. Results are presented and discussed in detail. (WHK)

Teeter, R.R.; Jamieson, W.M.

1980-01-01T23:59:59.000Z

270

Group III-nitride thin films grown using MBE and bismuth  

DOE Patents [OSTI]

The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

Kisielowski, Christian K. (Peidmont, CA); Rubin, Michael (Berkeley, CA)

2000-01-01T23:59:59.000Z

271

Group III-nitride thin films grown using MBE and bismuth  

DOE Patents [OSTI]

The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

Kisielowski, Christian K. (Piedmont, CA); Rubin, Michael (Berkeley, CA)

2002-01-01T23:59:59.000Z

272

The MSW solution to the solar neutrino problem for non-standard solar models  

E-Print Network [OSTI]

The difficulties for non-standard solar models (NSSM) in resolving the solar neutrino problem are discussed stressing the incompatibility of the gallium--Kamiokande data, and of the gallium--chlorine data. We conclude that NSSM's cannot explain simultaneously the results of any two of the solar neutrino data (chlorine, Kamiokande and gallium). We address further the question whether the MSW solution exists for NSSM's (e.g. models with $^8$B neutrino flux much lower than the standard one and/or central temperature $T_c$ very different from $T_c^{\\text{SSM}}$). We demonstrate that the MSW solution exists and is very stable relative to changes of $S_{17}$ ($S$-factor for $p$ + $^7$Be reaction) and $T_c$. In particular, $\\Delta m^2$ is almost constant while $\\sin^2 2\\theta$ depends on the exact values of $S_{17}$ (or $^8$B-neutrino flux) and $T_c$.

V. Berezinsky; G. Fiorentini; M. Lissia

1994-08-17T23:59:59.000Z

273

High efficiency radioisotope thermophotovoltaic prototype generator  

SciTech Connect (OSTI)

A radioisotope thermophotovoltaic generator space power system (RTPV) is lightweight, low-cost alternative to the present radioisotope thermoelectric generator system (RTG). The fabrication of such an RTPV generator has recently become feasible as the result of the invention of the GaSb infrared sensitive photovoltaic cell. Herein, the authors present the results of a parametric study of emitters and optical filters in conjuction with existing data on gallium antimonide cells. They compare a polished tungsten emitter with an Erbia selective emitter for use in combination with a simple dielectric filter and a gallium antimonide cell array. They find that the polished tungsten emitter is by itself a very selective emitter with low emissivity beyond 4 microns. Given a gallium antimonide cell and a tungsten emitter, a simple dielectric filter can be designed to transmit radiant energy below 1.7 microns and to reflect radiant energy between 1.7 and 4 microns back to the emitter. Because of the low long wavelength emissivity associated with the polished tungsten emitter, this simple dielectric filter then yields very respectable system performance. Also as a result of the longer wavelength fall-off in the tungsten emissivity curve, the radiation energy peak for a polished tungsten emitter operating at 1300 K shifts to shorter wavelengths relative to the blackbody spectrum so that the radiated energy peak falls right at the gallium antimonide cell bandedge. The result is that the response of the gallium antimonide cell is well matched to a polished tungsten emitter. The authors propose, therefore, to fabricate an operating prototype of a near term radioisotope thermophotovoltaic generator design consisting of a polished tungsten emitter, standard gallium antimonide cells, and a near-term dielectric filter.

Avery, J.E.; Samaras, J.E.; Fraas, L.M.; Ewell, R. [JX Crystals, Inc., Issaquah, WA (United States)

1995-10-01T23:59:59.000Z

274

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

275

Low dimensional GaAs/air vertical microcavity lasers  

SciTech Connect (OSTI)

We report on the fabrication of gallium arsenide (GaAs)/air distributed Bragg reflector microresonators with indium gallium arsenide quantum wells. The structures are studied via momentum resolved photoluminescence spectroscopy which allows us to investigate a pronounced optical mode quantization of the photonic dispersion. We can extract a length parameter from these quantized states whose upper limit can be connected to the lateral physical extension of the microcavity via analytical calculations. Laser emission from our microcavity under optical pumping is observed in power dependent investigations.

Gessler, J.; Steinl, T.; Fischer, J.; Höfling, S.; Schneider, C.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany); Mika, A.; S?k, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wybrze?e Wyspia?skiego 27, 50-370 Wroc?aw (Poland)

2014-02-24T23:59:59.000Z

276

Dynamics of Ion Beam Stimulated Surface Mass Transport to Nanopores David P. Hoogerheide1  

E-Print Network [OSTI]

Dynamics of Ion Beam Stimulated Surface Mass Transport to Nanopores David P. Hoogerheide1 membrane, from the substrate side, by rastering a 10-nm diameter, 50 keV gallium ion beam produced by a FEI We explore the ion beam-induced dynamics of the formation of large features at the edges of nanopores

277

Photo: D. Stevenson and C. Conway/Beckman Institute/University of Illinois An inorganic LED display printed on a flexible substrate bends without breaking  

E-Print Network [OSTI]

by the Ford Motor Co., which envisions many possible automotive applications for thin, flexible lighting this atop a layer of aluminum arsenide which itself coated a gallium arsenide substrate. Using a combination, such displays would be almost completely transparent--and well suited for another automotive need: inexpensive

Rogers, John A.

278

MSW Implications of Solar Neutrino Experiments  

E-Print Network [OSTI]

I discuss the implications for future solar neutrino experiments of the most recent gallium data in the context of the MSW mechanism. At the low energy end of the solar neutrino spectrum we need to measure the $^7$Be component directly; and at the high energy end, we need precise measurements of the shape of the spectrum.

S. P. Rosen

1992-10-01T23:59:59.000Z

279

Synthesis and use of (perfluoroaryl) fluoro-aluminate anion  

DOE Patents [OSTI]

A trityl perfluorophenyl alumninate such as tris(2,2',2"-nonafluorobiphenyl)-fluoroaluminate (PBA.sup..crclbar.) and its role as a cocatalyst in metallocene-mediated olefin polymerization is disclosed. Gallium and indium analogs are also disclosed, as are analogs with different anyl groups or different numbers of flourine atoms thereon.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2001-01-01T23:59:59.000Z

280

EURODISPLAY 2002 631 P-64: A Comparative Study of Metal Oxide Coated Indium-tin Oxide Anodes  

E-Print Network [OSTI]

EURODISPLAY 2002 631 P-64: A Comparative Study of Metal Oxide Coated Indium-tin Oxide Anodes and Technology Clear Water Bay, Kowloon, Hong Kong Abstract Indium-tin oxide anodes capped with certain oxides-emitting diodes (OLEDs). The oxides of tin, zinc, praseodymium, yttrium, gallium, terbium and titanium have been

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Fluidic patch antenna based on liquid metal alloy/single-wall carbon-nanotubes operating at the S-band frequency  

E-Print Network [OSTI]

Fluidic patch antenna based on liquid metal alloy/single-wall carbon-nanotubes operating at the S (eutectic gallium indium) blended with single-wall carbon-nanotube (SWNTs). The nanocomposite­24 For instance, Cheng et al.15 and So and coworkers14 reported an unbalanced loop antenna and a half- wave dipole

282

Studies of local and intermediate range structure in crystalline and amorphouse materials at high pressure using high-energy x-rays.  

SciTech Connect (OSTI)

The method of high-energy total elastic X-ray scattering to determine the atomic structure of nanocrystalline, highly disordered, and amorphous materials is presented. The current state of the technique, its potential, and limitations are discussed with two successful studies on the pressure induced phase transition in mackinawite (FeS) and the high-pressure behavior of liquid gallium.

Ehm, L.; Antao, M.; Chen, J.; Locke, D. R.; Michel, F. M.; Martin, C. D.; Yu, T.; Lee, P. L.; Chupas, P. J.; Shastri, S. D.; Guo, Q.; Parise, J. B.; Stony Brook Univ.; BNL

2007-06-01T23:59:59.000Z

283

Studies of Local and Intermediate Range Structure in Crystalline and Amorphous Materials at High Pressure Using High-Energy X-rays  

SciTech Connect (OSTI)

The method of high-energy total elastic X-ray scattering to determine the atomic structure of nanocrystalline, highly disordered, and amorphous materials is presented. The current state of the technique, its potential, and limitations are discussed with two successful studies on the pressure induced phase transition in mackinawite (FeS) and the high-pressure behavior of liquid gallium.

Ehm,L.; Antao, S.; Chen, J.; Locke, D.; Michel, F.; Martin, D.; Yu, T.; Parise, J.; Lee, P.; et al.

2007-01-01T23:59:59.000Z

284

Ab initio cluster calculations of hydrogenated GaAs,,001... surfaces Chemical Engineering Department, University of California, Los Angeles, California 90095-1592  

E-Print Network [OSTI]

Ab initio cluster calculations of hydrogenated GaAs,,001... surfaces Q. Fu Chemical Engineering Engineering Department, University of California, Los Angeles, California 90095-1592 Received 11 November 1999 Hydrogen adsorption on the 2 4 and 4 2 reconstructions of gallium arsenide 001 has been studied by internal

Li, Lian

285

Top-gate thin-film transistors based on GaN channel layer Rongsheng Chen, Wei Zhou, and Hoi Sing Kwok  

E-Print Network [OSTI]

liquid gallium target. The GaN TFTs exhibit good electrical performance such as field effect mobility of 1 cm2 /Vs, threshold voltage of Ã?0.4 V, on/off current ratio of 105 , and subthreshold swing of 0 electrical sta- bility of ZnO-based TFTs is still a main issue preventing from commercialization.9 Bottom

286

This content has been downloaded from IOPscience. Please scroll down to see the full text. Download details  

E-Print Network [OSTI]

S is found as a window layer for thin film cadmium telluride (CdTe) and copper indium gallium (di)selenide based solar cells. The recent advances in CdTe/CdS thin film technology and fabrication Materials allowed CdTe/CdS solar cells to emerge as a leader in the growing market of thin film module production

Khare, Sanjay V.

287

You are here: Home / News / 3D view of 1D nanostructures More services  

E-Print Network [OSTI]

create tool to put the lid on solar power fluctuations Variability law for solar panels News 3D view of 1 recently reported that individual gallium nitride nanowires show strong piezoelectricity ­ a type of charge. To obtain the measurements, researchers applied an electric field in different directions in single nanowire

Espinosa, Horacio D.

288

Characterization and Modeling of Silicon Carbide Power Devices and Paralleling Operation  

E-Print Network [OSTI]

Characterization and Modeling of Silicon Carbide Power Devices and Paralleling Operation Yutian Cui silicon carbide (SiC) power devices. The devices have been tested for both static and dynamic like silicon carbide (SiC) and gallium nitride (GaN) are becoming more attractive. SiC power devices

Tolbert, Leon M.

289

Hydrogen, Fuel Cells, and Infrastructure Technologies FY 2002 Progress Report Section VI. Safety and Codes & Standards  

E-Print Network [OSTI]

to H2 from 0-100% at 450o C in N2 background Future Directions · Fabricate 2nd generation sensors.A Safety VI.A.1 Gallium Nitride Integrated Gas/Temperature Sensors for Fuel Cell System Monitoring catalytic gate field effect transistor (FET) sensors to resolve and detect carbon monoxide (CO

290

Design Constraints for Liquid-Protected Divertors S. Shin, S. I. Abdel-Khalik  

E-Print Network [OSTI]

, and particle surface interactions to establish the operating windows for candidate liquids [4]. Lithium, Flibe for lithium, Flibe, lithium- lead, tin, and gallium are presented. The generalized charts developed. INTRODUCTION Work on liquid-surface-protected plasma facing components, and plasma surface interactions, has

California at San Diego, University of

291

CONF-881031--66 DE89 007397  

E-Print Network [OSTI]

liquid-metals are evaluated, i.e., lithium, gallium, andtin. A wide range of reactor operating conditions-1O9-Eng-38. cope up with a large heat loads it must also withstand severe surface erosion during both normal and off-normal operating conditions. Under most conditions the major mechanism of erosion during

Harilal, S. S.

292

Differential radioactivity monitor for non-invasive detection of ocular melanoma  

DOE Patents [OSTI]

There is described an apparatus and method for diagnosing ocular cancer that is both non-invasive and accurate which comprises two radiation detectors positioned before each of the patient's eyes which will measure the radiation level produced in each eye after the administration of a tumor-localizing radiopharmaceutical such as gallium-67.

Lambrecht, R.M.; Packer, S.

1982-09-23T23:59:59.000Z

293

Method for non-invasive detection of ocular melanoma  

DOE Patents [OSTI]

An apparatus and method is disclosed for diagnosing ocular cancer that is both non-invasive and accurate. The apparatus comprises two radiation detectors positioned before each of the patient's eyes which will measure the radiation level produced in each eye after the administration of a tumor-localizing radiopharmaceutical such as gallium-67. 2 figs.

Lambrecht, R.M.; Packer, S.

1984-10-30T23:59:59.000Z

294

GaAs Nanowire Array Solar Cells with Axial p-i-n Junctions Maoqing Yao, Ningfeng Huang, Sen Cong, Chun-Yung Chi, M. Ashkan Seyedi, Yen-Ting Lin, Yu Cao,  

E-Print Network [OSTI]

for future low-cost, high-efficiency photovoltaics. KEYWORDS: Nanowires, solar cells, gallium arsenide, axial.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity

Zhou, Chongwu

295

Aluminum battery alloys  

DOE Patents [OSTI]

Aluminum alloys suitable for use as anode structures in electrochemical cells are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

Thompson, D.S.; Scott, D.H.

1984-09-28T23:59:59.000Z

296

Matter & Energy Solar Energy  

E-Print Network [OSTI]

See Also: Matter & Energy Solar Energy· Electronics· Materials Science· Earth & Climate Energy and the Environment · Renewable Energy· Environmental Science · Reference Chemical compound· Semiconductor· Gallium at the University of Illinois, the future of solar energy just got brighter. Although silicon is the industry

Rogers, John A.

297

Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates  

E-Print Network [OSTI]

, 37831, E-mail: xiaok@ornl.gov 4 Nanosystem Research Institute, National Institute of Advanced Industrial Information The GaS laminar precursor was obtained by the following method: The method uses a two-zone horizontal furnace with a fused silica tube, into which the sulfur powder and gallium were placed in the low

Geohegan, David B.

298

Method of forming particulate materials for thin-film solar cells  

DOE Patents [OSTI]

A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

Eberspacher, Chris; Pauls, Karen Lea

2004-11-23T23:59:59.000Z

299

Layer-By-Layer Self-Assembly of CIGS Nanoparticles and Polymers for All-Solution Processable Low-Cost, High-Efficiency Solar Cells  

E-Print Network [OSTI]

-Cost, High-Efficiency Solar Cells Tung Ho1 , Robert Vittoe3 , Namratha Kakumanu2 , Sudhir Shrestha2-Purdue University Indianapolis (IUPUI), Indianapolis, IN 46202 Thin film solar cells made from copper indium gallium thereby affecting solar cell efficiency. This research aims to study various polymer materials to replace

Zhou, Yaoqi

300

Friday, May 21, 2010 High-Performance Electronics without the High Price  

E-Print Network [OSTI]

materials. Researchers have used the method to make high-performance image sensors, transistors, and solar exotic semiconductors brings down the cost of high- performance solar cells and microchips. By Katherine Bourzac Compared to silicon, semiconductors like gallium arsenide can be made into solar cells

Rogers, John A.

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Aluminum battery alloys  

DOE Patents [OSTI]

Aluminum alloys suitable for use as anode structures in electrochemical cs are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

Thompson, David S. (Richmond, VA); Scott, Darwin H. (Mechanicsville, VA)

1985-01-01T23:59:59.000Z

302

Minerals Use in Safety Applications in the Workplace Many of the applications described below are found in and around the U.S. Geological Survey  

E-Print Network [OSTI]

communications equipment, including computers and cell phones, as well as in gallium-based solar cells that power that provide power to emergency lighting fixtures and backup power to medical equipment. #12;2 Cement. Copper--Copper wiring provides power for emergency lighting systems and power and signal transmission

Torgersen, Christian

303

IEEE ELECTRON DEVICE LETTERS, VOL. 24, NO. 4, APRIL 2003 227 RF MEMS Switches Fabricated on  

E-Print Network [OSTI]

with superior performance over con- ventional semiconductor devices [4]­[7]. Typically, RF MEMS switches-resistivity silicon wafers, gallium arsenide (GaAs) wafers, and quartz substrates using semiconductor Manuscript and surface planarization of wide metal lines prior to deposition of a metal membrane bridge, which poses

Cetiner, Bedri A.

304

PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2006; 14:2543  

E-Print Network [OSTI]

PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2006; 14 Solar Energy, Inc., 5575 S. Houghton Rd, Tucson, AZ 85747, USA 7 Energy Photovoltaics, Inc., 276 Bakers transport within copper indium gallium sulfoselenide (CIGSS) photovoltaic devices, whose absorber layers

Anderson, Timothy J.

305

CX-002541: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Emerging Renewables Industries: Copper, Indium, Gallium, Selenium (CIGS) Linear Source Thermal DepositionCX(s) Applied: B2.2, B5.1Date: 05/19/2010Location(s): St. Paul, MinnesotaOffice(s): Energy Efficiency and Renewable Energy, Golden Field Office

306

Metal articles having ultrafine particles dispersed therein  

SciTech Connect (OSTI)

This patent describes a metal article of manufacture. It comprises: a metal selected from the group consisting of copper, silver, gold, lead, tin, nickel, zinc, cobalt, antimony, bismuth, iron, cadmium, chromium, germanium, gallium, selenium, tellurium, mercury, tungsten arsenic, manganese, iridium, indium, ruthenium, rhenium, rhodium, molybdenum, palladium, osmium and platinum; and a plurality of ultrafine particles.

Alexander, G.B.; Nadkarni, R.A.

1992-07-28T23:59:59.000Z

307

NREL scientists develop robust, high-performance IZO transparent contact for CIGS solar cells.  

E-Print Network [OSTI]

NREL scientists develop robust, high-performance IZO transparent contact for CIGS solar cells indium gallium diselenide (CIGS) solar cell is zinc oxide (ZnO). The problem is that unprotected Zn is a lifetime-limiting problem that is currently addressed solely through encapsulation. Fundamentally improving

308

2006 Minerals Yearbook U.S. Department of the Interior  

E-Print Network [OSTI]

to develop a low-cost manufacturing process for flexible thin film copper indium gallium diselenide (CIGS's Letters from Japan Ltd., 2007). Mainstream LCDs were also trending toward larger panel sizes, which construction of the first 8th generation LCD fabrication (8G) line at the Tangjeong production complex located

309

Method for non-invasive detection of ocular melanoma  

DOE Patents [OSTI]

There is described an apparatus and method for diagnosing ocular cancer that is both non-invasive and accurate which comprises two radiation detectors positioned before each of the patient's eyes which will measure the radiation level produced in each eye after the administration of a tumor-localizing radiopharmaceutical such as gallium-67.

Lambrecht, Richard M. (Quogue, NY); Packer, Samuel (Floral Park, NY)

1984-01-01T23:59:59.000Z

310

Synthesis, Growth, and Properties of TlGa{sub 1-x}Yb{sub x}S{sub 2} Crystals  

SciTech Connect (OSTI)

The synthesis of TlGa{sub 1-x}Yb{sub x}S{sub 2} single crystals with the partial substitution of ytterbium for gallium is described. Variations in the electric conductivity of grown crystals irradiated with X-rays of various intensities are measured.

Kerimova, E.M.; Mustafaeva, S.N.; Asadov, Yu.G.; Kerimov, R.N. [Institute of Physics, National Academy of Sciences, pr. Dzhavida 33, Baku, 370143 (Azerbaijan)

2005-12-15T23:59:59.000Z

311

CX-010973: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

312

CX-011468: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Low-Cost Silicon-Carbide (SiC) and Gallium-Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 10/29/2013 Location(s): Michigan Offices(s): National Energy Technology Laboratory

313

CX-010974: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

314

256 NATURE PHYSICS | VOL 8 | APRIL 2012 | www.nature.com/naturephysics news & views  

E-Print Network [OSTI]

resonances, such as the vibrational modes of a suspended beam. Now, Martin Gustafsson and colleagues, writing-state equivalent of ripples on a pond. In piezoelectric materials (such as the gallium arsenide slab used in a radiofrequency- tank circuit, one obtains a so-called radiofrequency SET5 -- an extremely sensitive and fast

Loss, Daniel

315

CX-001137: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Epi Tools for Gallium Nitride LED (Light Emitting Diode) DevicesCX(s) Applied: B3.6Date: 03/05/2010Location(s): Santa Clara, CaliforniaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

316

National Renewable Energy Laboratory  

E-Print Network [OSTI]

Hydrogen-Production Technology Hydrogen offers great promise as a clean fuel in our nation's energy research and collaboration to improve the durability of photovoltaic cells for PEC hydrogen production-indium-phosphide/ gallium-arsenide) with an impressive 12.4% solar-to-hydrogen efficiency. Unfortunately, the tandem cell

317

CX-009000: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

"High Quality, Low Cost Bulk Gallium Nitride (GaN) Substrates Grown by the Electrochemical Solution Growth Method CX(s) Applied: A9, B3.6 Date: 08/20/2012 Location(s): Missouri Offices(s): Golden Field Office"

318

Cantilever Epitaxy Process Wins R&D 100 Award  

Broader source: Energy.gov [DOE]

Sandia National Laboratories received an R&D 100 Award from R&D Magazine for development of a new process for growing gallium nitride on an etched sapphire substrate. The process, called cantilever epitaxy, promises to make brighter and more efficient green, blue, and white LEDs.

319

Surface and interfacial reaction study of half cycle atomic layer deposited HfO{sub 2} on chemically treated GaSb surfaces  

SciTech Connect (OSTI)

An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (XPS) study was conducted in order to investigate the evolution of the HfO{sub 2} dielectric interface with GaSb(100) surfaces after sulfur passivation and HCl etching, designed to remove the native oxides. With the first pulses of tetrakis(dimethylamido)hafnium(IV) and water, a decrease in the concentration of antimony oxide states present on the HCl-etched surface is observed, while antimony sulfur states diminished below the XPS detection limit on sulfur passivated surface. An increase in the amount of gallium oxide/sulfide is seen, suggesting oxygen or sulfur transfers from antimony to gallium during antimony oxides/sulfides decomposition.

Zhernokletov, D. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Dong, H.; Brennan, B.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Yakimov, M.; Tokranov, V.; Oktyabrsky, S. [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States)] [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States); Wallace, R. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2013-04-01T23:59:59.000Z

320

Phase stable rare earth garnets  

DOE Patents [OSTI]

A transparent ceramic according to one embodiment includes a rare earth garnet comprising A.sub.hB.sub.iC.sub.jO.sub.12, where h is 3.+-.10%, i is 2.+-.10%, and j is 3.+-.10%. A includes a rare earth element or a mixture of rare earth elements, B includes at least one of aluminum, gallium and scandium, and C includes at least one of aluminum, gallium and scandium, where A is at a dodecahedral site of the garnet, B is at an octahedral site of the garnet, and C is at a tetrahedral site of the garnet. In one embodiment, the rare earth garment has scintillation properties. A radiation detector in one embodiment includes a transparent ceramic as described above and a photo detector optically coupled to the rare earth garnet.

Kuntz, Joshua D.; Cherepy, Nerine J.; Roberts, Jeffery J.; Payne, Stephen A.

2013-06-11T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

322

Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells  

DOE Patents [OSTI]

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO); Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

1998-03-24T23:59:59.000Z

323

Low Energy Solar Neutrinos and Spin Flavour Precession  

E-Print Network [OSTI]

The possibility that the Gallium data effectively indicates a time modulation of the solar active neutrino flux in possible connection to solar activity is examined on the light of spin flavour precession to sterile neutrinos as a subdominant process in addition to oscillations. We distinguish two sets of Gallium data, relating them to high and low solar activity. Such modulation affects principally the low energy neutrinos ($pp$ and $^7 Be$) so that the effect, if it exists, will become most clear in the forthcoming Borexino and LENS experiments and will provide evidence for a neutrino magnetic moment. Using a model previously developed, we perform two separate fits in relation to low and high activity periods to all solar neutrino data. These fits include the very recent charged current spectrum from the SNO experiment. We also derive the model predictions for Borexino and LENS experiments.

Bhag C. Chauhan; Joao Pulido; R. S. Raghavan

2005-07-03T23:59:59.000Z

324

Concerning the energy levels of silver in Ge-Si alloys  

SciTech Connect (OSTI)

The emission from impurity states of silver (an element of the IB subgroup) in a Ge-Si alloy, containing 18 at % Si, has been studied. The donor level of silver has been found in crystals doubly doped with gallium and silver, while its first acceptor level has been revealed in crystals doped with only silver. Single crystals were grown by pulling from a melt using a feeding rod. Doping with gallium was performed by introducing this element into the feeding rod, and silver was introduced into the crystals via diffusion. The positions of the donor and first acceptor Ag levels with respect to the top of the valence band were found by analyzing the temperature dependence of the Hall coefficient and the electroneutrality equation for the crystal: 0.06 and 0.29 eV, respectively.

Tahirov, V. I. [Baku State University (Azerbaijan); Agamaliev, Z. A. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Sadixova, S. R.; Guliev, A. F.; Gahramanov, N. F., E-mail: n_gakhramanov@mail.ru [Sumgait State University (Azerbaijan)

2012-03-15T23:59:59.000Z

325

Two dimensional metallic photonic crystals for light trapping and anti-reflective coatings in thermophotovoltaic applications  

SciTech Connect (OSTI)

We report the development of a front-side contact design for thermophotovoltaics that utilizes metallic photonic crystals (PhCs). While this front-side grid replacement covers more surface area of the semiconductor, a higher percentage of photons is shown to be converted to usable power in the photodiode. This leads to a 30% increase in the short-circuit current of the gallium antimonide thermophotovoltaic cell.

Shemelya, Corey; DeMeo, Dante F.; Vandervelde, Thomas E. [The Renewable Energy and Applied Photonics Laboratories, Electrical and Computer Engineering, Tufts University, Medford, Massachusetts 02155 (United States)

2014-01-13T23:59:59.000Z

326

Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates  

DOE Patents [OSTI]

A process and composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenide sulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating.

Eser, Erten; Fields, Shannon

2012-05-01T23:59:59.000Z

327

NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

Not Available

2012-09-01T23:59:59.000Z

328

OBSERVATOIRE DE GRENOBLE LABORATOIRE DE GEOPHYSIQUE INTERNE ET TECTONOPHYSIQUE  

E-Print Network [OSTI]

thermo-compositionnelle dans la partie de fer liquide du noyau de la Terre est la source d'´energie la´e- sente une premi`ere ´etape vers cet objectif: la mod´elisation de l'´ecou- lement convectif sans champ d'un at modelling the non-magnetic convective flow of a spherical shell of liquid metal (gallium), in the regime

Aubert, Julien

329

Experiment Safety Assurance Package for Mixed Oxide Fuel Irradiation in an Average Power Position (I-24) in the Advanced Test Reactor  

SciTech Connect (OSTI)

The Fissile Material Disposition Program Light Water Reactor Mixed Oxide Fuel Irradiation Test Project Plan details a series of test irradiations designed to investigate the use of weapons-grade plutonium in MOX fuel for light water reactors (LWR) (Cowell 1996a, Cowell 1997a, Thoms 1997a). Commercial MOX fuel has been successfully used in overseas reactors for many years; however, weapons-derived test fuel contains small amounts of gallium (about 2 parts per million). A concern exists that the gallium may migrate out of the fuel and into the clad, inducing embrittlement. For preliminary out-of-pile experiments, Wilson (1997) states that intermetallic compound formation is the principal interaction mechanism between zircaloy cladding and gallium. This interaction is very limited by the low mass of gallium, so problems are not expected with the zircaloy cladding, but an in-pile experiment is needed to confirm the out-of-pile experiments. Ryskamp (1998) provides an overview of this experiment and its documentation. The purpose of this Experiment Safety Assurance Package (ESAP) is to demonstrate the safe irradiation and handling of the mixed uranium and plutonium oxide (MOX) Fuel Average Power Test (APT) experiment as required by Advanced Test Reactor (ATR) Technical Safety Requirement (TSR) 3.9.1 (LMITCO 1998). This ESAP addresses the specific operation of the MOX Fuel APT experiment with respect to the operating envelope for irradiation established by the Upgraded Final Safety Analysis Report (UFSAR) Lockheed Martin Idaho Technologies Company (LMITCO 1997a). Experiment handling activities are discussed herein.

J. M . Ryskamp; R. C. Howard; R. C. Pedersen; S. T. Khericha

1998-10-01T23:59:59.000Z

330

Determination of the retention function of [superscript 67]Ga in canine  

E-Print Network [OSTI]

, "Standards for Protection Against Radiation", Texas Regulations for Control of Radiation, Section 21. 303, (Austin, Texas: Texas Department of Health). USNRC80 U. S. Nuclear Regulatory... produced by varying degrees of bone neoplasia in the patients. In all three species, excretion of gallium was greatest within 24 hours of injection; diminishing thereafter. Edwards et al (Ed70) reported that human patients injected with carrier-free* 67...

Schoenbucher, Bruce

1982-01-01T23:59:59.000Z

331

Phosphors containing boron and metals of Group IIIA and IIIB  

DOE Patents [OSTI]

A phosphor comprises: (a) at least a first metal selected from the group consisting of yttrium and elements of lanthanide series other than europium; (b) at least a second metal selected from the group consisting of aluminum, gallium, indium, and scandium; (c) boron; and (d) europium. The phosphor is used in light source that comprises a UV radiation source to convert UV radiation to visible light.

Setlur, Anant Achyut; Srivastava, Alok Mani; Comanzo, Holly Ann; Manivannan, Venkatesan

2006-10-31T23:59:59.000Z

332

Radiopharmaceuticals for imaging the heart  

DOE Patents [OSTI]

Radiopharmaceuticals for imaging myocardial tissues are prepared by forming lipophilic, cationic complexes of radioactive metal ions with metal chelating ligands comprising the Schiff base adducts of triamines and tetraamines with optionally substituted salicylaldehydes. The lipophilic, cationic, radioactive complexes of the invention exhibit high uptake and retention in myocardial tissues. Preferred gallium-68(III) complexes in accordance with this invention can be used to image the heart using positron emission tomography. 6 figures.

Green, M.A.; Tsang, B.W.

1994-06-28T23:59:59.000Z

333

Radiopharmaceuticals for imaging the heart  

DOE Patents [OSTI]

Radiopharmaceuticals for imaging myocardial tissues are prepared by forming lipophilic, cationic complexes of radioactive metal ions with metal chelating ligands comprising the Schiff base adducts of triamines and tetraamines with optionally substituted salicylaldehydes. The lipophilic, cationic, radioactive complexes of the invention exhibit high uptake and retention in myocardial tissues. Preferred gallium-68(III) complexes in accordance with this invention can be used to image the heart using positron emission tomography.

Green, Mark A. (West Lafayette, IN); Tsang, Brenda W. (Lafayette, IN)

1994-01-01T23:59:59.000Z

334

Electronic structure of [Ga2(tren)2(CAsq,cat )](BPh4)2(BF4): An EPR, ENDOR, and  

E-Print Network [OSTI]

Electronic structure of [Ga2(tren)2(CAsq,cat )](BPh4)2(BF4): An EPR, ENDOR, and density functional. Keywords: EPR ENDOR Semiquinone Gallium Spin exchange DFT a b s t r a c t The bimetallic [M1M2(tren)2(CAn)2(CAsq,cat )]3+ . This report deals with the interpretation of the EPR and ENDOR spectra of [Ga2

McCusker, James K.

335

NREL Spurred the Success of Multijunction Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Many scientists once believed that high-quality gallium indium phosphide (GaInP) alloys could not be grown for use as semiconductors because the alloys would separate. However, researchers at the National Renewable Energy Laboratory (NREL) thought differently, and they employed GaInP in a material combination that allowed the multijunction cell to flourish. The multijunction cell is now the workhorse that powers satellites and the catalyst for renewed interest in concentrator photovoltaic products.

Not Available

2013-08-01T23:59:59.000Z

336

Sustainable Electricity Factsheets | ornl.gov  

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337

Sustainable Land Lab Tour | Photosynthetic Antenna Research Center  

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338

Sustainable NREL Biennial Report, FY 2012 - 2013 (Management Report), NREL (National Renewable Energy Laboratory)  

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339

Sustainable Success | Y-12 National Security Complex  

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340

Sustainable Transportation Program | Clean Energy | ORNL  

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Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Sustainable Transportation Program | ornl.gov  

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342

Sustainable Transportation Update | ornl.gov  

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343

Sustainable Transportation | Department of Energy  

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344

Symmetry Breaking of H2 Dissociation by a Single Photon  

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345

Symmetry Breaking of H2 Dissociation by a Single Photon  

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346

Synaptic Arrangement of the Neuroligin/beta-Neurexin Complex Revealed by  

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347

Structures and Activities Shed Light into Cancer and Aging Phenotypes of  

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348

Structures for Three Membrane Transport Proteins Yield Functional Insights  

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349

Structures of Clamp-Loader Complexes Are Key to DNA Replication  

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350

Structures of Domains I and IV from YbbR are representative of a widely  

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351

Structures of the Ribosome in Intermediate States of Ratcheting  

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352

Structures of the Ribosome in Intermediate States of Ratcheting  

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353

Student Research Papers | The Ames Laboratory  

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354

Student Summer Internships at NERSC  

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355

Student UEC Member Goes Above and Beyond  

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356

Student engineers design and race battery-powered cars in this year's  

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357

Students gain work experience at WIPP  

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358

Studies Bolster Promise of Topological Insulators  

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359

Study identifies two Northwest basalt rock caverns sites for storing energy  

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360

Study of Copper Diffusion Through Ruthenium Thin Film by Photoemission  

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Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Study of Highly Selective and Efficient Thiol Derivatization using Selenium  

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362

Studying Complex Structures in the Blink of an Eye | The Ames Laboratory  

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363

Studying the Solar System's Chemical Recipe  

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364

Substituted molecular p-dopants: A theoretical study. | EMSL  

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365

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

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366

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

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367

Success Story: Capstone Turbine Corporation | Department of Energy  

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368

Suite of Photo-electrochemical Technologies for Hydrogen Production -  

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369

Sulfur-Graphene Oxide Nanocomposite Cathodes for Lithium/Sulfur Cells -  

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370

Supercomputing & Computation | More Science | ORNL  

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371

Supercomputing | Facilities | ORNL  

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372

Superconducting Topological Insulators  

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373

Superconducting Topological Insulators  

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374

Superconductivity Centennial | Jefferson Lab  

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375

Superconductivity Conference Held  

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376

Supercritical Fluid Attachment of Palladium Nanoparticles on Aligned Carbon  

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377

Superhydrophobic Coating for Evaporative Purification and Minerals  

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378

Superhydrophobic Thin Film Symposium | ornl.gov  

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379

Supplement Analysis of Environmental Effects of Changes in DOE's Preferred Alternative for Management of Spent Nuclear Fuel from the K basins at the Hanford Site, Richland, Washington  

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380

Supplier Information Form | Argonne National Laboratory  

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Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Supporting Data-Producing  

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382

Supporting Multiple Workloads, Batch Systems,  

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383

Supporting Small Businesses | Department of Energy  

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384

Supporting biosurveillance via the web  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium OxideSuminDepositionSupplierSupportingSupporting

385

Suppression of Tin Whiskers in Lead-Free Solder - Energy Innovation Portal  

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386

Surface Electronic Spectra Detected by Atomic Desorption. | EMSL  

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387

Surface Modification Agents for Lithium-Ion Batteries | Argonne National  

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388

Surface Organometallic-Catalyzed Oxidation and Reductions | The Ames  

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389

Surface Radiation Budget from ARM Satellite Retrievals  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline GalliumSuppression of conductivity inBatterieson

390

Surface and Structural Stabilities of Carbon Additives in High Voltage  

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391

Surface-Based Remote Sensing of the Aerosol Indirect Effect at Southern Great Plains  

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392

Surface-Induced Dissociation of Ions Produced by Matrix-Assisted Laser  

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393

Surprising Quasiparticle Interactions in Graphene  

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394

Surprising Quasiparticle Interactions in Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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395

Surprising Quasiparticle Interactions in Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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396

Sustainability  

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397

Sustainability Research | The Ames Laboratory  

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398

Sustainability | Argonne National Laboratory  

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399

Sustainability: Energy Efficiency  

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400

Sustainable Bioenergy | Argonne National Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Modeling and simulation of CuIn{sub 1?x}Ga{sub x}Se{sub 2} based thin film solar cell  

SciTech Connect (OSTI)

In this work, CIGS (Copper Indium Gallium Diselenide) based solar cell structure has been simulated. We have been calculated short circuit current, open circuit voltage and efficiency of the cell. The thickness of the absorption layer is varied from 400 to 3000 nm, keeping the thickness of other layers unchanged. The effect of absorption layer thickness over cell performance has been analyzed and found that the efficiency increases upto 22% until the thickness of the absorption layer reaches around 2000 nm.

Kumari, S., E-mail: sarita.kumari132@gmail.com; Verma, A. S. [Department of Physics, Banasthali University, Rajasthan-304022 (India); Singh, P.; Gautam, R. [Department of Electronics and Communication, Krishna Institute of Engg. and Tech., Ghaziabad-201206 (India)

2014-04-24T23:59:59.000Z

402

Composition and crystallinity in electrochemically deposited magnetostrictive galfenol (FeGa)  

SciTech Connect (OSTI)

Here, we report the first measurements of magnetostriction as a function of composition for electrodeposited iron-gallium alloys, also known as galfenol. Galfenol is an exciting material due to its large magnetostriction constant (up to 400 ppm) and robust mechanical properties. A wide range of sensors, actuators, and other transducers can be fabricated by taking advantage of galfenol's unique mix of magnetic and mechanical properties. Electrodeposition allows galfenol to be easily integrated into a variety of applications, such as toque sensors with conformal, monolithic active layers. In this work, we examine the underlying factors that influence magnetostriction in electrodeposited galfenol, including crystallinity and composition. Here, we have controlled the film composition, as measured by energy dispersive x-ray spectroscopy, over the range of 5–25% gallium using a single plating bath by varying deposition parameters. This composition range corresponds to the region of largest expected magnetostriction for iron gallium alloys. However, our measured magnetostriction values were significantly lower than the values for single crystal galfenol from literature. The electrodeposited films in this work appeared polycrystalline when measured using x-ray diffraction. When the texture of the film is taken into account, the magnetostriction results closely matched the predicted values. These results show that it is possible to achieve magnetostrictive galfenol thin films over a wide range of compositions using electrodeposition.

Estrine, Eliot C., E-mail: estr0042@umn.edu; Hein, Matt; Robbins, William P.; Stadler, Bethanie J. H. [Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

2014-05-07T23:59:59.000Z

403

High-temperature, structural disorder, phase transitions, and piezoelectric properties of GaPO{sub 4}  

SciTech Connect (OSTI)

Gallium orthophosphate was studied at high temperature up to 1303 K by total neutron scattering and 1173 K by piezoelectric measurements. Rietveld refinements at 1223 K confirm the stability of the structural distortion in the {alpha}-quartz-type phase with an average tilt angle {delta}=18.8 deg. at this temperature. In contrast, reverse Monte Carlo (RMC) refinements of total neutron scattering data indicate that, whereas the degree of structural disorder initially slowly varies over a very large temperature interval in the {alpha}-quartz-type phase, an increase in disorder is observed beginning above 1023 K. Piezoelectric measurements indicate that the quality factor (Q) of GaPO{sub 4} resonators remains stable up to this temperature above which the piezoelectric properties of the material degrade. This degradation can be correlated to the increase in structural disorder. RMC refinements indicate that the high-temperature {beta}-cristobalite-type phase at 1303 K is characterized by significant thermally induced disorder with oxygen atom density forming a continuous ring around the vector joining neighboring gallium and phosphorous atoms. Gallium phosphate may be expected to retain its piezoelectric properties up to within 200 K of the phase transition temperature and as a consequence be used in applications at temperatures slightly above 1000 K.

Haines, J.; Cambon, O.; Prudhomme, N.; Fraysse, G.; Keen, D. A.; Chapon, L. C.; Tucker, M. G. [Laboratoire de Physico-Chimie de la Matiere Condensee, UMR CNRS 5617, Universite Montpellier II, Place Eugene Bataillon, cc003, 34095 Montpellier cedex 5 (France); Department of Physics, Oxford University, Clarendon Laboratory, Parks Road, Oxford OX1 3PU (United Kingdom); and ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot, Oxfordshire OX11 0QX (United Kingdom); ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot, Oxfordshire OX11 0QX (United Kingdom); Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ (United Kingdom)

2006-01-01T23:59:59.000Z

404

High-efficiency solar cell and method for fabrication  

DOE Patents [OSTI]

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

Hou, Hong Q. (Albuquerque, NM); Reinhardt, Kitt C. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

405

High-efficiency solar cell and method for fabrication  

DOE Patents [OSTI]

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.

Hou, H.Q.; Reinhardt, K.C.

1999-08-31T23:59:59.000Z

406

Nuclear Medicine Program progress report for quarter ending June 30, 1991  

SciTech Connect (OSTI)

In this report the excitation functions for production of gallium-66 via {alpha}-induced nuclear reactions on enriched zinc-66 have been measured with E{sub {alpha}}{le}27.3 Mev and E{sub {alpha}}{le}43.7 MeV employing the stack thin-target technique. In addition, the induced activity of gallium-67 in the same sets of targets allowed an evaluation of the excitation functions of the corresponding nuclear reactions. These preliminary studies have demonstrated that sufficient levels of gallium-66 can be produced by {alpha}-induced reactions on enriched zinc targets. A series of radioiodinated analogues of 1-azabicyclo(2.2.2)oct-3-yl {alpha}-hydroxy-{alpha}, {alpha}-diphenylacetate (QNB) have been prepared. These new analogues include 1-azabicyclo-(2.2.2)oct-3-yl{alpha}-hydroxy-{alpha}-(4-iodophenyl)-{alpha}-methylacetate(2,I-WNA), 1-azabicyclo(2.2.2)oct-3-yl (3-iodo)-xanthene-9-carboxylate (3,I-QNX), and 1-azabicyclo(2.2.2)oct-3-yl {alpha}-hydroxy-{alpha}-(E-1-iodo-1-propen-3-yl)-{alpha}-phenylacetate (4,I-QNP), which have also been radiolabeled with iodine-125 with high specific activity. The biodistribution, brain uptake, and receptor specificity of these new analogues are currently being studied. Shipments of radioactive agents made to collaborators during this period included. One shipment of iodine-125-labeled 15-(p-iodophenyl)-3-R,S-methylpentadecanoic acid (BMIPP) and tungsten-188/rhenium-188 generator. 16 refs., 7 figs., 1 tab.

Knapp, F.F. Jr.; Ambrose, K.R.; Callahan, A.P.; McPherson, D.W.; Mirzadeh, S.; Srivastava, P.C.; Hasan, A.; Lambert, C.R.; Lambert, S.J.; Rice, D.E.

1991-09-01T23:59:59.000Z

407

Production Of High Specific Activity Copper-67  

DOE Patents [OSTI]

A process for the selective production and isolation of high specific activity Cu.sup.67 from proton-irradiated enriched Zn.sup.70 target comprises target fabrication, target irradiation with low energy (<25 MeV) protons, chemical separation of the Cu.sup.67 product from the target material and radioactive impurities of gallium, cobalt, iron, and stable aluminum via electrochemical methods or ion exchange using both anion and cation organic ion exchangers, chemical recovery of the enriched Zn.sup.70 target material, and fabrication of new targets for re-irradiation is disclosed.

Jamriska, Sr., David J. (Los Alamos, NM); Taylor, Wayne A. (Los Alamos, NM); Ott, Martin A. (Los Alamos, NM); Fowler, Malcolm (Los Alamos, NM); Heaton, Richard C. (Los Alamos, NM)

2003-10-28T23:59:59.000Z

408

Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector  

SciTech Connect (OSTI)

This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G. [Institute of Biophysics, Imaging and Optical Science, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom); Sharples, Steve D. [Applied Optics Group, Electrical Systems and Optics Research Division, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom)

2010-02-15T23:59:59.000Z

409

Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same  

DOE Patents [OSTI]

Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani; Manivannan, Venkatesan

2004-07-13T23:59:59.000Z

410

Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology  

SciTech Connect (OSTI)

Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed.

Dargis, Rytis, E-mail: dargis@translucentinc.com; Clark, Andrew; Erdem Arkun, Fevzi [Translucent, Inc., 952 Commercial St., Palo Alto, California 94303 (United States); Grinys, Tomas; Tomasiunas, Rolandas [Institute of Applied Research, Vilnius University, Sauletekio al. 10, LT-10223 Vilnius (Lithuania); O'Hara, Andy; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, 2515 Speedway, C1600, Austin, Texas 78712 (United States)

2014-07-01T23:59:59.000Z

411

Europium-activated phosphors containing oxides of rare-earth and group-IIIB metals and method of making the same  

DOE Patents [OSTI]

Europium-activated phosphors comprise oxides of at least a rare-earth metal selected from the group consisting of gadolinium, yttrium, lanthanum, and combinations thereof and at least a Group-IIIB metal selected from the group consisting of aluminum, gallium, indium, and combinations thereof. A method for making such phosphors comprises adding at least a halide of at least one of the selected Group-IIIB metals in a starting mixture. The method further comprises firing the starting mixture in an oxygen-containing atmosphere. The phosphors produced by such a method exhibit improved absorption in the UV wavelength range and improved quantum efficiency.

Comanzo, Holly Ann; Setlur, Anant Achyut; Srivastava, Alok Mani

2006-04-04T23:59:59.000Z

412

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

413

NREL Scientists Spurred the Success of Multijunction Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Before 1984, many scientists believed that high-quality gallium indium phosphide (GaInP) alloys could not be grown for use as semiconductors because the alloys would separate. One researcher at the Solar Energy Research Institute (SERI) thought differently. His name was Jerry Olson, and his innovative thinking changed solar history. Olson identified a material combination that allowed the multijunction cell to flourish. It is now the workhorse that powers satellites and the catalyst for renewed interest in concentrator photovoltaic (CPV) products.

Not Available

2012-09-01T23:59:59.000Z

414

Organic Light Emitting Diodes Using a Ga:ZnO Anode  

SciTech Connect (OSTI)

We report the application of gallium doped zinc oxide (GZO) films as anodes in organic light emitting diodes (OLEDs). Pulsed laser deposited GZO films of differing Ga composition are examined. Bilayer OLEDs using GZO and indium tin oxide (ITO) anodes are then compared. Relative to ITO, the GZO anodes have slightly better sheet resistance and transparency in the visible spectral region. Device data suggest GZO results in more effective hole injection into an aromatic triamine hole transporting layer. Indium free anodes are expected toimprove OLED stability while lowering the cost per unit area, crucial for OLED based lighting applications.

Berry, J. J.; Ginley, D. S.; Burrows, Paul E.

2008-05-12T23:59:59.000Z

415

Optoelectronic simulation of GaAs solar cells with angularly selective filters  

SciTech Connect (OSTI)

We discuss the influence of angularly selective filters on thin film gallium arsenide solar cells. For this reason, the detailed balance model was refined to fit our needs with respect to Auger recombination, reflection, transmission, and realistic absorption. For calculating real systems, an approach was made to include optical effects of angularly selective filters into electron-hole dynamic equations implemented in PC1D, a one dimensional solar cell calculation tool. With this approach, we find a relative V{sub oc} increase of 5% for an idealized 100?nm GaAs cell, including Auger recombination.

Kraus, Tobias, E-mail: tobias.kraus@ise.fraunhofer.de; Höhn, Oliver; Hauser, Hubert; Bläsi, Benedikt [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany)

2014-02-07T23:59:59.000Z

416

Commercialization of High Efficiency Low Cost CIGS Technology Based on Electroplating: Final Technical Progress Report, 28 September 2007 - 30 June 2009  

SciTech Connect (OSTI)

This report describes SoloPower's work as a Photovoltaic Technology Incubator awardee within the U.S. Department of Energy's Solar Energy Technologies Program. The term of this subcontract with the National Renewable Energy Laboratory was two years. The project focused on SoloPower's electrodeposition-based copper indium gallium (di)selenide (CIGS) technology. Under this subcontract, SoloPower improved the quality of its flexible metal substrates, increased the size of its solar cells from 0.5 cm2 to 120 cm2, increased the small-area cell efficiencies from near 11% to near 14%, demonstrated large-area cells, and developed a module manufacturing process.

Basol, B.

2010-08-01T23:59:59.000Z

417

Short-baseline electron neutrino disappearance, tritium beta decay, and neutrinoless double-beta decay  

SciTech Connect (OSTI)

We consider the interpretation of the MiniBooNE low-energy anomaly and the gallium radioactive source experiments anomaly in terms of short-baseline electron neutrino disappearance in the framework of 3+1 four-neutrino mixing schemes. The separate fits of MiniBooNE and gallium data are highly compatible, with close best-fit values of the effective oscillation parameters {Delta}m{sup 2} and sin{sup 2}2{theta}. The combined fit gives {Delta}m{sup 2}(greater-or-similar sign)0.1 eV{sup 2} and 0.11(less-or-similar sign)sin{sup 2}2{theta}(less-or-similar sign)0.48 at 2{sigma}. We consider also the data of the Bugey and Chooz reactor antineutrino oscillation experiments and the limits on the effective electron antineutrino mass in {beta} decay obtained in the Mainz and Troitsk tritium experiments. The fit of the data of these experiments limits the value of sin{sup 2}2{theta} below 0.10 at 2{sigma}. Considering the tension between the neutrino MiniBooNE and gallium data and the antineutrino reactor and tritium data as a statistical fluctuation, we perform a combined fit which gives {Delta}m{sup 2}{approx_equal}2 eV and 0.01(less-or-similar sign)sin{sup 2}2{theta}(less-or-similar sign)0.13 at 2{sigma}. Assuming a hierarchy of masses m{sub 1}, m{sub 2}, m{sub 3}<gallium data and the antineutrino reactor and tritium data with different mixings in the neutrino and antineutrino sectors. We find a 2.6{sigma} indication of a mixing angle asymmetry.

Giunti, Carlo; Laveder, Marco [INFN, Sezione di Torino, Via P. Giuria 1, I-10125 Torino (Italy); Dipartimento di Fisica G. Galilei, Universita di Padova, and INFN, Sezione di Padova, Via F. Marzolo 8, I-35131 Padova (Italy)

2010-09-01T23:59:59.000Z

418

Light water reactor mixed-oxide fuel irradiation experiment  

SciTech Connect (OSTI)

The United States Department of Energy Office of Fissile Materials Disposition is sponsoring and Oak Ridge National Laboratory (ORNL) is leading an irradiation experiment to test mixed uranium-plutonium oxide (MOX) fuel made from weapons-grade (WG) plutonium. In this multiyear program, sealed capsules containing MOX fuel pellets fabricated at Los Alamos National Laboratory (LANL) are being irradiated in the Advanced Test Reactor (ATR) at the Idaho National Engineering and Environmental Laboratory (INEEL). The planned experiments will investigate the utilization of dry-processed plutonium, the effects of WG plutonium isotopics on MOX performance, and any material interactions of gallium with Zircaloy cladding.

Hodge, S.A.; Cowell, B.S. [Oak Ridge National Lab., TN (United States); Chang, G.S.; Ryskamp, J.M. [Lockheed Martin Idaho Technologies Co., Idaho Falls, ID (United States). Idaho National Engineering and Environmental Lab.

1998-06-01T23:59:59.000Z

419

Nuclear radiation detectors based on a matrix of ion-implanted p-i-n diodes on undoped GaAs epilayers  

SciTech Connect (OSTI)

Samples of nuclear detectors which represent matrices of p-i-n diodes were fabricated based on undoped gallium arsenide epitaxial layers by ion implantation technology. The detectors have a size of the active area of 0.4 Multiplication-Sign 0.4 and 0.9 Multiplication-Sign 0.9 cm{sup 2}. Electrical characteristics of fabricated detectors and results of measurements of fast neutrons spectra of {sup 241}Am-Be source by the recoil protons method are discussed.

Baryshnikov, F. M.; Britvich, G. I.; Chernykh, A. V.; Chernykh, S. V.; Chubenko, A. P.; Didenko, S. I.; Koltsov, G. I. [National University of Science and Technology 'MISIS', Leninskiy prospect 4, 119049 Moscow (Russian Federation); Institute for High Energy Physics, Polshhad nauki 1, 142281 Protvino (Russian Federation); National University of Science and Technology 'MISIS', Leninskiy prospect 4, 119049 Moscow (Russian Federation); P.N. Lebedev Physical Institute of the RAS, Leninskiy prospect 53, 119991 Moscow (Russian Federation); National University of Science and Technology 'MISIS', Leninskiy prospect 4, 119049 Moscow (Russian Federation)

2012-11-06T23:59:59.000Z

420

Nanobeam Photonic Crystal Cavity Light-Emitting Diodes  

E-Print Network [OSTI]

We present results on electrically driven nanobeam photonic crystal cavities formed out of a lateral p-i-n junction in gallium arsenide. Despite their small conducting dimensions, nanobeams have robust electrical properties with high current densities possible at low drive powers. Much like their two-dimensional counterparts, the nanobeam cavities exhibit bright electroluminescence at room temperature from embedded 1,250 nm InAs quantum dots. A small room temperature differential gain is observed in the cavities with minor beam self-heating suggesting that lasing is possible. These results open the door for efficient electrical control of active nanobeam cavities for diverse nanophotonic applications.

Shambat, Gary; Petykiewicz, Jan; Mayer, Marie A; Sarmiento, Tomas; Harris, James; Haller, Eugene E; Vuckovic, Jelena

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Improved method of preparing p-i-n junctions in amorphous silicon semiconductors  

DOE Patents [OSTI]

A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

Madan, A.

1984-12-10T23:59:59.000Z

422

Sustainable NREL - Site Sustainability Plan FY 2015 (Marketing Publication), NREL (National Renewable Energy Laboratory)  

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423

Sustainable Transportation, Continuum Magazine, Fall 2013 / Issue 5 (Book), NREL (National Renewable Energy Laboratory)  

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424

Sutter Power Project  

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425

Sven Leyffer | Argonne National Laboratory  

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426

Swapan Chattopadhyay Inducted into AAAS Fellowship | Jefferson Lab  

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427

Swapan Chattopadhyay Named as AAAS Fellow | Jefferson Lab  

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428

Sweet Smell of Renewable Fuel | U.S. DOE Office of Science (SC)  

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429

Swift & Staley Recognized at DOE 13th Annual Small Business Forum |  

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430

Swimming Pool Covers | Department of Energy  

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431

Switch Switch  

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432

Sylvania Corporation, Hicksville, NY and Bayside, NY - Addendum to July  

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433

Sylvania Corporation, Hicksville, NY and Bayside, NY | Department of Energy  

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434

Symmetric Long Straight Section Lattices  

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435

Symmetries in Nature A glimpse into the beauty and art of science  

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436

Symmetries of migration related segments of all [001] coincidence site  

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437

Symmetry Breaking of H2 Dissociation by a Single Photon  

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438

Symmetry Breaking of H2 Dissociation by a Single Photon  

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439

Symmetry-Driven Spontaneous Self-assembly of Nanoscale Ceria Building  

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440

Sandia National Labs: PCNSC: Departments: Radiation-Solid Interactions: IBA  

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Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

NREL: Process Development and Integration Laboratory - Copper Indium  

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442

Structure, Morphology, and Optical Properties of Amorphous and  

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443

Structure-Activity Relationships in NH3-SCR over Cu-SSZ-13 as Probed by  

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444

Structured Regions of Alpha-synuclein Fibrils Include the Early Onset  

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445

Structures and Dynamics in Condensed Systems | The Ames Laboratory  

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446

Structures and Stabilities of (MgO)n Nanoclusters. | EMSL  

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447

Structures for Three Membrane Transport Proteins Yield Functional Insights  

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448

Structures for Three Membrane Transport Proteins Yield Functional Insights  

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449

Structures for Three Membrane Transport Proteins Yield Functional Insights  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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450

Structures of Clamp-Loader Complexes Are Key to DNA Replication  

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451

Structures of Clamp-Loader Complexes Are Key to DNA Replication  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide Thin Films. | EMSLStructuresStructures of

452

Structures of Clamp-Loader Complexes Are Key to DNA Replication  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide Thin Films. | EMSLStructuresStructures

453

Structures of the Ribosome in Intermediate States of Ratcheting  

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454

Structures of the Ribosome in Intermediate States of Ratcheting  

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455

Structures of the Ribosome in Intermediate States of Ratcheting  

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456

Structures with Negative Refractive Index for Applications in Optics and  

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457

Stuart E. Hunt named Carlsbad Area Office counsel  

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458

Stuart R Hudson | Princeton Plasma Physics Lab  

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459

Student Educational Resources - STEM | Department of Energy  

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460

Student Research Participation Program | Argonne National Laboratory  

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Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Student Safety 2011 [Compatibility Mode]  

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462

Student and Teacher Programs | Neutron Science | ORNL  

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463

Students Use JLab Website to Prep for Virginia Standards of Learning Tests  

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464

Students Who Inspire  

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465

Students benefit the Laboratory and the region  

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466

Students try out PPPL plasma physics experiment that can be accessed from  

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467

Students' Association  

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468

Students--  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide Thin Films.Administration go on, 2015

469

Studies Bolster Promise of Topological Insulators  

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470

Studies Bolster Promise of Topological Insulators  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide Thin Films.Administration go on,

471

Studies Bolster Promise of Topological Insulators  

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472

Studies Bolster Promise of Topological Insulators  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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473

Studies Bolster Promise of Topological Insulators  

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474

Studies of Nonlinear Problems, I  

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475

Studies of Secondary Melanoma on C57BL/6J Mouse Liver Using 1H NMR  

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476

Studies of the Active Sites for Methane Dehydroaromatization Using  

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477

Study 59 - Fed 70WY Surplus Deficit.xls  

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478

Study Guides for Written and Hands-On Assessments  

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479

Study of Aerosol Indirect Effects in China  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide Thin Films.AdministrationAerosol Indirect

480

Study of Electrochemical Reactions Using Nanospray Desorption Electrospray  

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Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Study of Ion Cooling and Ejection from Two Stage Linear Quadrupole Ion Trap consisted of RFQ ion guides  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon Cooling and Ejection from Two Stage Linear

482

Study of Ion Specific Interactions of Alkali Cations with Dicarboxylate  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon Cooling and Ejection from Two Stage

483

Study of Martensitic Phase transformation in a NiTiCu Thin Film Shape  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon Cooling and Ejection from Two StageMemory

484

Study of Surface Cleaning Methods and Pyrolysis Temperature on  

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485

Study proposes new way to measure superconducting fluctuations | Argonne  

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486

Studying Altocumulus Plus Virga with Ground-based Active and Passive Remote Sensors Zhien Wang1, Kenneth Sassen2, David Whiteman3, and Belay Demoz3 1University of Maryland, Baltimore County, Catonsville, MD 21228 2University of Alaska, Fairbanks, Alaska 99775 3NASA Goddard Space Flight Center, Greenbelt, MD 20771 E-mail: zhien@agnes.gsfc.nasa.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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487

Studying Altocumulus Plus Virga with Ground-based Active and Passive Remote Sensors Zhien Wang1, Kenneth Sassen2, David Whiteman3, and Belay Demoz3 1University of Maryland, Baltimore County, Catonsville, MD 21228 2University of Alaska, Fairbanks, Alaska 99775 3NASA Goddard Space Flight Center, Greenbelt, MD 20771 E-mail: zhien@agnes.gsfc.nasa.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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488

Studying Altocumulus with Ice Virga Using Ground-Based Active and Passive Remote Sensors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon Cooling and Ejection fromSeasonal

489

Studying Cellulose Fiber Structure by SEM, XRD, NMR and Acid Hydrolysis. |  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon Cooling and Ejection fromSeasonalEMSL

490

Studying Mixed-Phased Clouds Using Ground-Based Active and Passive Remote Sensors  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon Cooling and EjectionStudying Mixed-Phased

491

Studying The Kinetics Of Crystalline Silicon Nanoparticle Lithiation With  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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492

Studying the Building Blocks of Matter: Public Talk Planned for Oct. 7 at  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon Cooling and EjectionStudyingJefferson Lab

493

Studying the Solar System's Chemical Recipe  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon Cooling and EjectionStudyingJefferson

494

Studying the Solar System's Chemical Recipe  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon Cooling andStudying the Solar System's

495

Studying the Solar System's Chemical Recipe  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon Cooling andStudying the Solar

496

Stump the Scientist | Page 3 of 3 | GE Global Research  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon Cooling andStudying the SolarStump the

497

Sub-Picosecond X-Ray Pulses Workshop  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon Cooling andStudying the SolarStump

498

Subcols-for-Microphys.eps  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon Cooling andStudying the

499

Subcontract No. AFJ-8-77550-01  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon Cooling andStudying theSUBCONTRACT NO.

500

Subcontracting | Y-12 National Security Complex  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon Cooling andStudying theSUBCONTRACT