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Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
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1

Zinc oxysulfide ternary alloy nanocrystals: A bandgap modulated photocatalyst  

SciTech Connect (OSTI)

Herein, we report a green economic route for the synthesis of a series of Zinc Oxysulfide (ZOS) (ZnO{sub 1-x}S{sub x}; 0 {<=} x {>=} 1; x = Sulfur) alloys nanoparticles. The crystallographic features of ZnO, ZOS, and ZnS confirmed by X-Ray Diffraction and validated by Transmission Electron Microscopy reveal the variation of lattice spacing in binary and ternary compositions with homogenous elemental distribution. The photocatalytic analysis of ZOS (0.4) is performed and compared with Degussa P25 to ascertain its photocatalytic activity against methyl orange under irradiation of 365 nm UV-Vis light. A bandgap of 2.7 eV for ZOS (0.4) aptly establishes its prospects for sunlight driven photocatalysis.

Pandey, Shiv K. [Department of Chemistry, MN National Institute of Technology, Allahabad (India) [Department of Chemistry, MN National Institute of Technology, Allahabad (India); Nanotechnology Application Centre, University of Allahabad, Allahabad (India); Pandey, Shipra; Pandey, Avinash C. [Nanotechnology Application Centre, University of Allahabad, Allahabad (India)] [Nanotechnology Application Centre, University of Allahabad, Allahabad (India); Mehrotra, G. K. [Department of Chemistry, MN National Institute of Technology, Allahabad (India)] [Department of Chemistry, MN National Institute of Technology, Allahabad (India)

2013-06-10T23:59:59.000Z

2

Molten iron oxysulfide as a superior sulfur sorbent. Final report, [September 1989--1993  

SciTech Connect (OSTI)

The studies had as original objective the analysis of conditions for using liquid iron oxysulfide as a desulfuring agent during coal gasification. Ancillary was a comparison of iron oxysulfide with lime as sorbents under conditions where lime reacts with S-bearing gases to form Ca sulfate or sulfide. Primary thrust is to determine the thermodynamic requirements for desulfurization by iron additions (e.g., taconite concentrate) during combustion in gasifiers operating at high equivalence ratios. Thermodynamic analysis of lime-oxygen-sulfur system shows why lime is injected into burners under oxidizing conditions; reducing conditions forms CaS, requiring its removal, otherwise oxidation and release of S would occur. Iron as the oxysulfide liquid has a range of stability and can be used as a desulfurizing agent, if the burner/gasifier operates in a sufficiently reducing regime (high equivalence ratio); this operating range is given and is calculable for a coal composition, temperature, stoichiometry. High moisture or hydrogen contents of the coal yield a poorer degree of desulfurization. Kinetic tests on individual iron oxide particles on substrates or Pt cups with a TGA apparatus fail to predict reaction rates within a burner. Preliminary tests on the Dynamic Containment Burner with acetylene give some promise that this system can produce the proper conditions of coal gasification for use of added iron as a sulfur sorbent.

Hepworth, M.T.

1993-03-31T23:59:59.000Z

3

Gallium interactions with Zircaloy  

SciTech Connect (OSTI)

This study focuses on the effects of gallium ion implantation into zircaloy cladding material to investigate the effects that gallium may have in a reactor. High fluence ion implantation of Ga ions was conducted on heated Zircaloy-4 in the range of 10{sup 16}--10{sup 18} Ga ions/cm2. Surface effects were studied using SEM and electron microprobe analysis. The depth profile of Ga in the Zircaloy was characterized with Rutherford backscattering and SIMS techniques. Results indicate that the Zirc-4 is little affected up to a fluence of 10{sup 17} Ga ions/cm{sup 2}. After implantation of 10{sup 18} Ga ions/cm{sup 2}, sub-grain features on the order of 2 {micro}m were observed which may be due to intermetallic compound formation between Ga and Zr. For the highest fluence implant, Ga content in the Zirc-4 reached a saturation value of between 30 and 40 atomic %; significant enhanced diffusion was observed but gallium was not seen to concentrate at grain boundaries.

Woods, A.L. [ed.; West, M.K. [Texas A and M Univ., College Station, TX (United States). Dept. of Nuclear Engineering

1999-01-01T23:59:59.000Z

4

Doping of gallium nitride using disilane  

Science Journals Connector (OSTI)

Keywords: disilane, gallium nitride, metalorganic chemical vapor deposition, organometallic vapor phase epitaxy, silicon doping

A. E. Wickenden; L. B. Rowland; K. Doverspike; D. K. Gaskill; J. A. Freitas, Jr.; D. S. Simons; P. H. Chi

1995-11-01T23:59:59.000Z

5

Cyclotron Resonance in Gallium  

Science Journals Connector (OSTI)

Azbel'-Kaner cyclotron resonance has been studied at 36 and 9 Gc/sec at 1.2°K in the three principal symmetry planes of gallium with the microwave currents both parallel and perpendicular to the applied magnetic field. The resonance signals were characterized by extreme complexity and high resolution (long relaxation times). Mass values are determined as a function of orientation of the magnetic field in the sample surfaces. No interpretation of the mass branches on a model Fermi surface is attempted, but some correlations with previous de Haas-van Alphen data are presented.

T. W. Moore

1968-01-15T23:59:59.000Z

6

Gallium interactions with Zircaloy  

E-Print Network [OSTI]

of weapons-grade plutonium (WGPu) in the United States is the conversion of weapons-grade plutonium into mixed-oxide (MOX) reactor fuel. MOX fuel fabricated in this way must be compatible with currently used nuclear fuel components. Since US WGPu contains... that gallium may have on zircaloy cladding during reactor operation. As a result of the reprocessing of spent fuel used in European nuclear programs, many studies have been conducted on the production and behavior of MOX fuel in traditional reactors [5...

West, Michael Keith

2012-06-07T23:59:59.000Z

7

 

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

oxysulfide (Gd2O2S) oxysulfide (Gd2O2S) Quantity Value Units Value Units 0.42266 Density 7.44 g cm-3 Mean excitation energy 493.3 eV Minimum ionization 1.257 MeV g-1cm2 9.352 MeV cm-1 Nuclear collision length 96.1 g cm-2 12.92 cm Nuclear interaction length 160.1 g cm-2 21.52 cm Pion collision length 121.5 g cm-2 16.33 cm Pion interaction length 190.2 g cm-2 25.57 cm Radiation length 8.49 g cm-2 1.141 cm Critical energy 11.27 MeV (for e-) 10.89 MeV (for e+) Molière radius 15.96 g cm-2 2.146 cm Plasma energy 51.10 eV Muon critical energy 199. GeV Composition: Elem Z Atomic frac* Mass frac* O 8 2.00 0.084528 S 16 1.00 0.084690 Gd 64 2.00 0.830782 * calculated from mass fraction data. Explanation of some entries

8

P-type gallium nitride  

DOE Patents [OSTI]

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

1997-08-12T23:59:59.000Z

9

Local environment and composition of magnesium gallium layered...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR Local environment and composition of magnesium gallium...

10

Cryogenic gallium phosphide acousto-optic deflectors  

Science Journals Connector (OSTI)

We present measurements of the acoustic intensity in a gallium phosphide acousto-optic deflector for the 0.6–1.3-GHz frequency range and the 8–295-K temperature range. The data show a...

Fuss, Ian; Smart, Darryn

1991-01-01T23:59:59.000Z

11

Die Bestimmung von Kupfer- und Nickelspuren in Gallium  

Science Journals Connector (OSTI)

Nickel- und Kupferkontaminierungen in Gallium im ppm-Bereich und darunter stören empfindlich bei der Verwendung in der Halbleiterphysik. Der Chloridkomplex des Galliums in 6-n HC1 wird von einem stark basische...

H. Titze

1977-01-01T23:59:59.000Z

12

GALLIUM--2000 30.1 By Deborah A. Kramer  

E-Print Network [OSTI]

the largest application for gallium, with optoelectronic devices [mostly laser diodes and light-use application for gallium, with 63% of total consumption. Optoelectronic devices accounted for 32% of domestic% of the gallium consumed in the United States was in the form of GaAs. GaAs was manufactured into optoelectronic

13

GALLIUM--1998 29.1 By Deborah A. Kramer  

E-Print Network [OSTI]

's) were the largest application for gallium, with optoelectronic devices [mostly laser diodes and light-use application for gallium, with 52% of total consumption. Optoelectronic devices accounted for 45% of domestic% of the gallium consumed in the United States was in the form of GaAs. GaAs was manufactured into optoelectronic

14

GALLIUM--1999 29.1 By Deborah A. Kramer  

E-Print Network [OSTI]

circuits (IC's) were the largest application for gallium, with optoelectronic devices [mostly laser diodes-use application for gallium, with 52% of total consumption. Optoelectronic devices accounted for 42% of domestic% of the gallium consumed in the United States was in the form of GaAs. GaAs was manufactured into optoelectronic

15

Method for Plutonium-Gallium Separation by Anodic Dissolution of a Solid Plutonium-Gallium Alloy  

SciTech Connect (OSTI)

Purified plutonium and gallium are efficiently recovered from a solid plutonium-gallium (Pu-Ga) alloy by using an electrorefining process. The solid Pu-Ga alloy is the cell anode, preferably placed in a moving basket within the electrolyte. As the surface of the Pu-Ga anode is depleted in plutonium by the electrotransport of the plutonium to a cathode, the temperature of the electrolyte is sufficient to liquify the surface, preferably at about 500 C, resulting in a liquid anode layer substantially comprised of gallium. The gallium drips from the liquified surface and is collected below the anode within the electrochemical cell. The transported plutonium is collected on the cathode surface and is recovered.

Miller, William E.; Tomczuk, Zygmunt

1998-12-08T23:59:59.000Z

16

Gallium nitride junction field-effect transistor  

DOE Patents [OSTI]

An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

Zolper, John C. (Albuquerque, NM); Shul, Randy J. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

17

Gallium nitride junction field-effect transistor  

DOE Patents [OSTI]

An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

Zolper, J.C.; Shul, R.J.

1999-02-02T23:59:59.000Z

18

Gallium Nitride Synthesis Using Lithium Metal as a Nitrogen Fixant  

Science Journals Connector (OSTI)

This present work centers on the synthesis of white, microcrystalline gallium nitride from gallium and ammonia, using lithium to increase the solubility of nitrogen-containing species in the metal phase. ... After the acid was decanted and the product was rinsed repeatedly with water and then acetone, the resulting white powder was found to exhibit the powder X-ray diffractogram (PXRD) (Figure 2a) of crystalline gallium nitride (1). ...

Seán T. Barry; Stephen A. Ruoff; Arthur L. Ruoff

1998-08-13T23:59:59.000Z

19

Interactions of zircaloy cladding with gallium -- 1997 status  

SciTech Connect (OSTI)

A four phase program has been implemented to evaluate the effect of gallium in mixed oxide (MOX) fuel derived from weapons grade (WG) plutonium on Zircaloy cladding performance. The objective is to demonstrate that low levels of gallium will not compromise the performance of the MOX fuel system in LWR. This graded, four phase experimental program will evaluate the performance of prototypic Zircaloy cladding materials against: (1) liquid gallium (Phase 1), (2) various concentrations of Ga{sub 2}O{sub 3} (Phase 2), (3) centrally heated surrogate fuel pellets with expected levels of gallium (Phase 3), and (4) centrally heated prototypic MOX fuel pellets (Phase 4). This status report describes the results of an initial series of tests for phases 1 and 2. Three types of tests are being performed: (1) corrosion, (2) liquid metal embrittlement (LME), and (3) corrosion mechanical. These tests are designed to determine the corrosion mechanisms, thresholds for temperature and concentration of gallium that may delineate behavioral regimes, and changes in mechanical properties of Zircaloy. Initial results have generally been favorable for the use of WG-MOX fuel. The MOX fuel cladding, Zircaloy, does react with gallium to form intermetallic compounds at {ge} 300 C; however, this reaction is limited by the mass of gallium and is therefore not expected to be significant with a low level (in parts per million) of gallium in the MOX fuel. While continued migration of gallium into the initially formed intermetallic compound results in large stresses that can lead to distortion, this is also highly unlikely because of the low mass of gallium or gallium oxide present and expected clad temperatures below 400 C. Furthermore, no evidence for grain boundary penetration by gallium has been observed.

Wilson, D.F.; DiStefano, J.R.; King, J.F.; Manneschmidt, E.T.; Strizak, J.P.

1997-11-01T23:59:59.000Z

20

Interactions of Zircaloy cladding with gallium: 1998 midyear status  

SciTech Connect (OSTI)

A program has been implemented to evaluate the effect of gallium in mixed-oxide (MOX) fuel derived from weapons-grade (WG) plutonium on Zircaloy cladding performance. The objective is to demonstrate that low levels of gallium will not compromise the performance of the MOX fuel system in a light-water reactor. The graded, four-phase experimental program was designed to evaluate the performance of prototypic Zircaloy cladding materials against (1) liquid gallium (Phase 1), (2) various concentrations of Ga{sub 2}O{sub 3} (Phase 2), (3) centrally heated surrogate fuel pellets with expected levels of gallium (Phase 3), and (4) centrally heated prototypic MOX fuel pellets (Phase 4). This status report describes the results of a series of tests for Phases 1 and 2. Three types of tests are being performed: (1) corrosion, (2) liquid metal embrittlement, and (3) corrosion-mechanical. These tests will determine corrosion mechanisms, thresholds for temperature and concentration of gallium that may delineate behavioral regimes, and changes in the mechanical properties of Zircaloy. Initial results have generally been favorable for the use of WG-MOX fuel. The MOX fuel cladding, Zircaloy, does react with gallium to form intermetallic compounds at {ge}300 C; however, this reaction is limited by the mass of gallium and is therefore not expected to be significant with a low level (parts per million) of gallium in the MOX fuel. Although continued migration of gallium into the initially formed intermetallic compound can result in large stresses that may lead to distortion, this was shown to be extremely unlikely because of the low mass of gallium or gallium oxide present and expected clad temperatures below 400 C. Furthermore, no evidence for grain boundary penetration by gallium has been observed.

Wilson, D.F.; DiStefano, J.R.; Strizak, J.P.; King, J.F.; Manneschmidt, E.T.

1998-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate  

Broader source: Energy.gov [DOE]

This project is producing high-efficiency semipolar light-emitting diodes (LEDs) on low-defect bulk gallium nitride (GaN) substrates.

22

High intensity x-ray source using liquid gallium target  

DOE Patents [OSTI]

A high intensity x-ray source that uses a flowing stream of liquid gallium as a target with the electron beam impinging directly on the liquid metal.

Smither, Robert K. (Hinsdale, IL); Knapp, Gordon S. (Cupertino, CA); Westbrook, Edwin M. (Chicago, IL); Forster, George A. (Westmont, IL)

1990-01-01T23:59:59.000Z

23

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(nanowires) in the compound gallium selenide. In short, ordered lines of structural vacancies in the material stimulate the growth of "one-dimensional" structures less than 1...

24

Formation of Hollow Gallium Nitride Spheres via Silica Sphere Templates  

Science Journals Connector (OSTI)

Formation of Hollow Gallium Nitride Spheres via Silica Sphere Templates ... To form reasonably uniform gallium oxide shells, the amounts of urea and water added to the reaction mixture were varied. ... Due to the low solubility of urea in 2-propanol, addition of a larger amount of urea than that used in this study is not desirable. ...

Chun-Neng Lin; Michael H. Huang

2008-12-30T23:59:59.000Z

25

Inhibition of Protein Tyrosine Phosphatase by the Antitumor Agent Gallium Nitrate  

Science Journals Connector (OSTI)

...Gallium is known to bind to the iron transport protein transferrin...NSC 166828. gallium, tris(acetylacetonate). The gallium nitrate:transferrin...the binding of gallium to the iron transport protein transferrin...and incorporation into the iron storage protein ferritin...

Margareta M. Berggren; Leigh Ann Burns; Robert T. Abraham; and Garth Powis

1993-04-15T23:59:59.000Z

26

Compatibility of ITER candidate structural materials with static gallium  

SciTech Connect (OSTI)

Tests were conducted on the compatibility of gallium with candidate structural materials for the International Thermonuclear Experimental Reactor, e.g., Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy, as well as Armco iron, Nickel 270, and pure chromium. Type 316 stainless steel is least resistant to corrosion in static gallium and Nb-5 Mo-1 Zr alloy is most resistant. At 400{degrees}C, corrosion rates are {approx}4.0, 0.5, and 0.03 mm/yr for type 316 SS, Inconel 625, and Nb-5 Mo- 1 Zr alloy, respectively. The pure metals react rapidly with gallium. In contrast to findings in earlier studies, pure iron shows greater corrosion than nickel. The corrosion rates at 400{degrees}C are {ge}88 and 18 mm/yr, respectively, for Armco iron and Nickel 270. The results indicate that at temperatures up to 400{degrees}C, corrosion occurs primarily by dissolution and is accompanied by formation of metal/gallium intermetallic compounds. The solubility data for pure metals and oxygen in gallium are reviewed. The physical, chemical, and radioactive properties of gallium are also presented. The supply and availability of gallium, as well as price predictions through the year 2020, are summarized.

Luebbers, P.R.; Michaud, W.F.; Chopra, O.K.

1993-12-01T23:59:59.000Z

27

Behavior of Zircaloy Cladding in the Presence of Gallium  

SciTech Connect (OSTI)

The U.S. Department of Energy has established a dual-track approach to the disposition of plutonium arising from the dismantling of nuclear weapons. Both immobilization and reactor-based mixed-oxide (MOX) fuel technologies are being evaluated. The reactor-based MOX fuel option requires assessment of the potential impact of concentrations of gallium (on the order of 1 to 10 ppm), not present in conventional MOX fuel, on cladding material performance. An experimental program was designed to evaluate the performance of prototypic Zircaloy cladding materials against (1) liquid gallium, and (2) various concentrations of G~03. Three types of tests were performed: (1) corrosion, (2) liquid metal embrittlement, and (3) corrosion-mechanical. These tests were to determine corrosion mechanisms, thresholds for temperature and concentration of gallium that delineate behavioral regimes, and changes in the mechanical properties of Zircaloy. Results have generally been favorable for the use of weapons-grade (WG) MOX fhel. The Zircaloy cladding does react with gallium to form intermetallic compounds at >3000 C; however, this reaction is limited by the mass of gallium and is therefore not expected to be significant with a low level (parts per million) of gallium in the MOX fuel. Furthermore, no evidence for grain boundary penetration by gallium or liquid metal embrittlement was observed.

DiStefano, J.R.; King, J.F.; Manneschmidt, E.T.; Strizak, J.P.; Wilson, D.F.

1998-09-28T23:59:59.000Z

28

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary (crude, unrefined) gallium was recovered in 2013. Globally,  

E-Print Network [OSTI]

% of the gallium consumed was used in integrated circuits (ICs). Optoelectronic devices, which include laser diodes of the remaining gallium consumption. Optoelectronic devices were used in aerospace applications, consumer goods

29

Role of gallium-67 in the clinical evaluation of cancer  

SciTech Connect (OSTI)

This review is based primarily on historic data, and it examines the indications for and limitations of gallium-67 scanning in the evaluation of patients with neoplasms. The use of gallium-67 scans is discussed according to tumor type, and data from the most representative and comprehensive studies are included. The results described, some of which were obtained primarily with older imaging techniques, should be regarded as representing the minimum that can be expected from application of this imaging procedure.

Bekerman, C.; Hoffer, P.B.; Bitran, J.D.

1984-10-01T23:59:59.000Z

30

Self-aligned submicron gate length gallium arsenide MESFET  

E-Print Network [OSTI]

SELF-ALIGNED SUBMICRON GATE LENGTH GALLIUM ARSENIDE MESFET A Thesis by HSIEN-CHING HUANG Submitted to the Graduate College of Texas ASSAM University in partial fulfillment of the requirement for the degree ol' MASTER OF SCIENCE May 1987... Major Subject: Electrical Engineering SELF-ALIGNED SUBMICRON GATE LENGTH GALLIUM ARSENIDE MESFET A Thesis by HSIEN-CHING HUANG Approved as to style and content by: Mark. H. Weichold (Chairman of Committee) Donald L. Parker (Member) dali L...

Huang, Hsien-Ching

2012-06-07T23:59:59.000Z

31

It's Elemental - Isotopes of the Element Gallium  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Zinc Zinc Previous Element (Zinc) The Periodic Table of Elements Next Element (Germanium) Germanium Isotopes of the Element Gallium [Click for Main Data] Most of the isotope data on this site has been obtained from the National Nuclear Data Center. Please visit their site for more information. Naturally Occurring Isotopes Mass Number Natural Abundance Half-life 69 60.108% STABLE 71 39.892% STABLE Known Isotopes Mass Number Half-life Decay Mode Branching Percentage 56 No Data Available Proton Emission (suspected) No Data Available 57 No Data Available Proton Emission (suspected) No Data Available 58 No Data Available Proton Emission (suspected) No Data Available 59 No Data Available Proton Emission (suspected) No Data Available 60 70 milliseconds Electron Capture 98.40%

32

Cavity optomechanics in gallium phosphide microdisks  

SciTech Connect (OSTI)

We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors >2.8?×?10{sup 5} and mode volumes <10(?/n){sup 3}, and study their nonlinear and optomechanical properties. For optical intensities up to 8.0?×?10{sup 4} intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5??m and several mechanical resonances, and measure an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g{sub 0}/2??30?kHz for the fundamental mechanical radial breathing mode at 488?MHz.

Mitchell, Matthew; Barclay, Paul E., E-mail: pbarclay@ucalgary.ca [Institute for Quantum Science and Technology, University of Calgary, Calgary, Alberta T2N 1N4 (Canada); National Institute for Nanotechnology, 11421 Saskatchewan Dr. NW, Edmonton, Alberta T6G 2M9 (Canada); Hryciw, Aaron C. [National Institute for Nanotechnology, 11421 Saskatchewan Dr. NW, Edmonton, Alberta T6G 2M9 (Canada)

2014-04-07T23:59:59.000Z

33

Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials  

DOE Patents [OSTI]

Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

Hogan, S.J.

1983-03-13T23:59:59.000Z

34

Gallium based low-interaction anions  

DOE Patents [OSTI]

The present invention provides: a composition of the formula M.sup.+x (Ga(Y).sub.4.sup.-).sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; a composition of the formula (R).sub.x Q.sup.+ Ga(Y).sub.4.sup.- where Q is selected from the group consisting of carbon, nitrogen, sulfur, phosphorus and oxygen, each R is a ligand selected from the group consisting of alkyl, aryl, and hydrogen, x is an integer selected from the group consisting of 3 and 4 depending upon Q, and each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; an ionic polymerization catalyst composition including an active cationic portion and a gallium based weakly coordinating anion; and bridged anion species of the formula M.sup.+x.sub.y [X(Ga(Y.sub.3).sub.z ].sup.-y.sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, magnesium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, X is a bridging group between two gallium atoms, y is an integer selected from the group consisting 1 and 2, z is an integer of at least 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide.

King, Wayne A. (Santa Fe, NM); Kubas, Gregory J. (Santa Fe, NM)

2000-01-01T23:59:59.000Z

35

Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardmenta)  

Science Journals Connector (OSTI)

Monte Carlo simulations were conducted to study the formation of gallium-nitride (GaN) layer on liquid gallium (Ga) sputtering target immersed in nitrogen ( N 2 ) plasma. In the simulation model N ions were assumed to possess energy equal to the bias voltage applied to the sputtering target with respect to the plasma. The results showed the surface morphology of GaN changed from a relatively smooth GaN on Ga surface at 50 eV N ion energy to a rough surface with GaN dendrites on liquid Ga at 500 eV ion energy. Further increase in N ion energy up to 1 keV resulted in smaller density of GaN dendrites on surface. Increasing surface coverage of Ga by GaN substantially reduced the sputtering yield of Ga from the target. These simulation results were correlated with previously reported experimental observations on liquid Ga surface immersed in the nitrogen plasma of a plasma-sputter-type ion source.

M. R. Vasquez Jr.; R. E. Flauta; M. Wada

2008-01-01T23:59:59.000Z

36

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Vacancy-Induced Nanoscale Wire Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Wednesday, 21 December 2005 00:00 Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features that exist naturally in the three-dimensional (bulk) form of materials. By this means, a group from the University of Washington has demonstrated a new way of creating one-dimensional nanoscale structures (nanowires) in the compound gallium selenide. In short, ordered lines of structural vacancies in the material stimulate the growth of "one-dimensional" structures less than 1 nanometer in width.

37

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features that exist naturally in the three-dimensional (bulk) form of materials. By this means, a group from the University of Washington has demonstrated a new way of creating one-dimensional nanoscale structures (nanowires) in the compound gallium selenide. In short, ordered lines of structural vacancies in the material stimulate the growth of "one-dimensional" structures less than 1 nanometer in width.

38

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features that exist naturally in the three-dimensional (bulk) form of materials. By this means, a group from the University of Washington has demonstrated a new way of creating one-dimensional nanoscale structures (nanowires) in the compound gallium selenide. In short, ordered lines of structural vacancies in the material stimulate the growth of "one-dimensional" structures less than 1 nanometer in width.

39

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features that exist naturally in the three-dimensional (bulk) form of materials. By this means, a group from the University of Washington has demonstrated a new way of creating one-dimensional nanoscale structures (nanowires) in the compound gallium selenide. In short, ordered lines of structural vacancies in the material stimulate the growth of "one-dimensional" structures less than 1 nanometer in width.

40

GALLIUM--1997 29.1 By Deborah A. Kramer  

E-Print Network [OSTI]

As is manufactured into optoelectronic devices (LED's, laser diodes, photodetectors, and solar cells) and integrated consumption. Optoelectronic devices accounted for 44% of domestic consumption, and the remaining 7% was used by imports, primarily high-purity gallium from France and low-purity material from Russia. Optoelectronic

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Sputtering of tin and gallium-tin clusters  

SciTech Connect (OSTI)

Tin and gallium-tin clusters have been produced by 4 keV Ar{sup +} ion bombardment of polycrystalline tin and the gallium-tin eutectic alloy and analyzed by time-of-flight mass spectrometry. The sputtered neutral species were photoionized with 193 nm (6.4 eV) excimer laser light. Neutral tin clusters containing up to 10 atoms and mixed gallium-tin clusters Ga{sub (n-m)}Sn{sub m} with n {<=} 4 for the neutrals and N {<=} 3 for the sputtered ionic species have been detected. Laser power density dependent intensity measurements, relative yields, and kinetic energy distributions have been measured. The abundance distributions of the mixed clusters have been found to be nonstatistical due to significant differences in the ionization efficiencies for clusters with equal nuclearity but different number of tin atoms. The results indicate that Ga{sub 2}Sn and Ga{sub 3}Sn like the all-gallium clusters have ionization potentials below 6.4 eV. In the case of Sn{sub 5}, Sn{sub 6}, GaSn and Ga{sub (n-m)}Sn{sub m} clusters with n=2 to 4 and m>1, the authors detect species that have sufficient internal energy to be one photon ionized despite ionization potentials that are higher 6.4 eV. The tin atom signal that is detected can be attributed to photofragmentation of dimers for both sputtering from polycrystalline tin and from the gallium-tin eutectic alloy.

Lill, T.; Calaway, W.F.; Ma, Z.; Pellin, M.J.

1994-08-01T23:59:59.000Z

42

Self- and zinc diffusion in gallium antimonide  

SciTech Connect (OSTI)

The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak, (2001)]. Many of the findings which will be reported here were previously published in three journal articles. Hartmut Bracht was the lead author on two articles on self-diffusion studies in GaSb [Bracht, (2001), (2000)], while this report's author was the lead author on Zn diffusion results [Nicols, (2001)]. Much of the information contained herein can be found in those articles, but a more detailed treatment is presented here.

Nicols, Samuel Piers

2002-03-26T23:59:59.000Z

43

Wet Chemical Functionalization of III–V Semiconductor Surfaces: Alkylation of Gallium Arsenide and Gallium Nitride by a Grignard Reaction Sequence  

Science Journals Connector (OSTI)

Wet Chemical Functionalization of III–V Semiconductor Surfaces: Alkylation of Gallium Arsenide and Gallium Nitride by a Grignard Reaction Sequence ... These observations are consistent with the known solubility of oxidized As species in water. ... Remote H plasma exposure was effective for removing halogens and hydrocarbons from the surfaces of both nitrides at 450 °C, but was not efficient for oxide removal. ...

Sabrina L. Peczonczyk; Jhindan Mukherjee; Azhar I. Carim; Stephen Maldonado

2012-02-28T23:59:59.000Z

44

E-Print Network 3.0 - arsenide- gallium instrument Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: of gallium arsenide, a semiconductor, which is used in advanced optoelectronics, lasers, microwave circuits... , and solar cells. To determine material...

45

Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells  

DOE Patents [OSTI]

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO), Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

1998-08-08T23:59:59.000Z

46

Neutron detection using boron gallium nitride semiconductor material  

SciTech Connect (OSTI)

In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to ?-rays but poor sensitivity to ?-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after ?-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

Atsumi, Katsuhiro [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Inoue, Yoku; Nakano, Takayuki, E-mail: ttnakan@ipc.shizuoka.ac.jp [Department of Electrical and Materials Science, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Mimura, Hidenori; Aoki, Toru [Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)

2014-03-01T23:59:59.000Z

47

The Russian-American Gallium solar neutrino Experiment  

SciTech Connect (OSTI)

The Russian-American Gallium solar neutrino Experiment (SAGE) is described. The solar neutrino flux measured by 31 extractions through October, 1993 is presented. The result of 69 {+-} 10{sub {minus}7}{sup +5} SNU is to be compared with a standard solar model prediction of 132 SNU. The status of a {sup 51}Cr neutrino source irradiation to test the overall operation of the experiment is also presented.

Elliott, S.R. [Univ. of Washington, Seattle, WA (United States); Abdurashitov, J.N. [Russian Academy of Sciences, Moscow (Russian Federation). Inst. for Nuclear Research; Bowles, T.J. [Los Alamos National Lab., NM (United States)] [and others

1995-12-31T23:59:59.000Z

48

The Russian-American gallium solar neutrino experiment  

SciTech Connect (OSTI)

The Russian-American Gallium solar neutrino Experiment (SAGE) is described. The solar neutrino flux measured by 31 extractions through October, 1993 is presented. The result of 69 {+-} 10{sub {minus}7}{sup +5} SNU is to be compared with a standard solar model prediction of 132 SNU. The status of a {sup 51}Cr neutrino source irradiation to test the overall operation of the experiment is also presented.

Elliott, S.R.; Wilkerson, J.F. [Univ. of Washington, Seattle, WA (United States); Abdurashitov, J.N. [Russian Academy of Sciences, Moscow (Russian Federation). Institute of Nuclear Research] [and others

1995-08-01T23:59:59.000Z

49

The influence of framework-gallium in zeolites: Electronegativity and infrared spectroscopic study  

SciTech Connect (OSTI)

Based on the influence of the composition (Si/Al and Si/Ga ratio) on the framework vibrations of zeolites with different structure types (FAU, LTL, BETA, MOR, MEL, MFI, TON, and MTW), an electronegativity value for gallium substituted into zeolite frameworks is proposed (Sanderson electronegativity scale). The present electronegativity value agrees with the known physicochemical properties of gallium substituted zeolites.

Dompas, D.H.; Mortier, W.J. (Katholieke Univ. Leuven (Belgium)); Kenter, O.C.H. (Delft Univ. of Technology (The Netherlands)); Janssen, M.J.G.; Verduijn, J.P. (Exxon Chemical Holland, Rotterdam (The Netherlands))

1991-05-01T23:59:59.000Z

50

Two-photon photovoltaic effect in gallium arsenide Jeff Chiles,1  

E-Print Network [OSTI]

Two-photon photovoltaic effect in gallium arsenide Jichi Ma,1 Jeff Chiles,1 Yagya D. Sharma,2 214669); published September 4, 2014 The two-photon photovoltaic effect is demonstrated in gallium; (230.0250) Optoelectronics; (040.5350) Photovoltaic; (130.4310) Nonlinear. http://dx.doi.org/10.1364/OL

Fathpour, Sasan

51

IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 2, APRIL 2012 123 Gallium Arsenide Solar Cell Absorption  

E-Print Network [OSTI]

IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 2, APRIL 2012 123 Gallium Arsenide Solar Cell Absorption flat gallium arsenide solar cell, we show that it is possible to modify the flow of light and enhance above the solar cell. The incoupling element is lossless and, thus, has the advantage that no energy

Grandidier, Jonathan

52

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network [OSTI]

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

53

Gallium/aluminum nanocomposite material for nonlinear optics and nonlinear plasmonics  

E-Print Network [OSTI]

Gallium/aluminum nanocomposite material for nonlinear optics and nonlinear plasmonics A. V penetration of gallium into an aluminum film. These composite films form mirrorlike interfaces with silica optics and active plasmonics. The material is a polycrystalline aluminum film on a silica sub- strate

Zheludev, Nikolay

54

Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium  

DOE Patents [OSTI]

Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2000-01-01T23:59:59.000Z

55

Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films  

E-Print Network [OSTI]

of the Nitrides of Aluminum and Gallium," J. Electrochem.1) 24 (1962). G. Long and L. M. Foster, "Aluminum Nitride, aRefractory for Aluminum to 2000°C," J. Am. Ceram. Soc. ,

Tao, Jonathan Huai-Tse

2010-01-01T23:59:59.000Z

56

Microsoft PowerPoint - Gallium Oxide_Ramana  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Gallium Oxide Nanostructures Gallium Oxide Nanostructures for High Temperature Sensors C.V. Ramana (PI) Evgeny Shafirovich (Co-PI) Mechanical Engineering, University of Texas at El Paso Students: Ernesto Rubio (PhD); S.K. Samala (MS) A.K. Narayana Swamy (PhD); K. Abhilash (MS) Program Manager: Richard Dunst, NETL, DOE Project: DE-FE0007225 Project Period: 10/01/2011 to 09/31/2014 1 06/12/2013 DOE UCR/HBCU Conference, June 11-13, 2013 2  Introduction  Research Objectives  Experiments ► Synthesis ► Characterization  Results and Discussion ► Pure Ga 2 O 3 Thin Films ► W-doped Ga 2 O 3 Thin Films (Physical Methods)  Summary & Future Work 06/12/2013 DOE UCR/HBCU Conference, June 11-13, 2013 3 06/12/2013 DOE UCR/HBCU Conference, June 11-13, 2013 4 Energy Systems High-T High-T High-P High-P

57

All-optical Wavelength Conversion in Aluminum Gallium Arsenide at Telecommunications Wavelengths.  

E-Print Network [OSTI]

??This thesis aims at both developing highly nonlinear Aluminum Gallium Arsenide waveguides(AlGaAs) and demonstrating all-optical wavelength conversion via cross-phase modulation in AlGaAs waveguides at telecommunications… (more)

Ng, Wing-Chau

2011-01-01T23:59:59.000Z

58

E-Print Network 3.0 - aluminum gallium indium Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

4F84E-A98D-4D11-B923-779B4467077F Unexpected Discovery Could Yield Full Spectrum Solar Cell Summary: elements from group III of the periodic table, like aluminum, gallium, and...

59

GALLIUM--2002 29.1 References that include a section mark () are found in the Internet  

E-Print Network [OSTI]

consumed in the United States was in the form of GaAs. GaAs was manufactured into optoelectronic devices application for gallium, with 46% of total consumption. Optoelectronic devices accounted for 42% of domestic

60

Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide (Fact Sheet)  

SciTech Connect (OSTI)

Capabilities fact sheet for the National Center for Photovoltaics: Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide that includes scope, core competencies and capabilities, and contact/web information.

Not Available

2011-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Effect of the nitrogen ion energy on the MBE growth of thin gallium nitride films  

Science Journals Connector (OSTI)

The influence of the energy of bombarding nitrogen ions on the growth of thin gallium nitride (GaN) films under molecular beam epitaxy (MBE) conditions has been simulated using the method of balance kinetic eq...

D. V. Kulikov; Yu. V. Trushin; V. S. Kharlamov

2010-03-01T23:59:59.000Z

62

Fabrication of optoelectronic microwave linear and ring resonators on a gallium arsenide substrate  

E-Print Network [OSTI]

FABRICATION OF OPTOELECTRONIC MICROWAVE LINEAR AND RING RESONATORS ON A GALLIUM ARSENIDE SUBSTRATE A Thesis by CHUN-LIANG YEH Submitted to the Office of Graduate Studies of Texas ASM University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE August 1993 Major Subject: Electrical Engineering FABRICATION OF OPTOELECTRONIC MICROWAVE LINEAR AND RING RESONATORS ON A GALLIUM ARSENIDE SUBSTRATE A Thesis by CHUN-LIANG YEH Approved as to style and content by: Mark...

Yeh, Chun-Liang

1993-01-01T23:59:59.000Z

63

Study of Magnetohydrodynamic Surface Waves on Liquid Gallium  

SciTech Connect (OSTI)

Magnetohydrodynamic (MHD) surface waves on liquid gallium are studied theoretically and experimentally in the small magnetic Reynolds number limit. A linear dispersion relation is derived when a horizontal magnetic field and a horizontal electric current is imposed. No wave damping is found in the shallow liquid limit while waves always damp in the deep liquid limit with a magnetic field parallel to the propagation direction. When the magnetic field is weak, waves are weakly damped and the real part of the dispersion is unaffected, while in the opposite limit waves are strongly damped with shortened wavelengths. In a table-top experiment, planar MHD surface waves on liquid gallium are studied in detail in the regime of weak magnetic field and deep liquid. A non-invasive diagnostic accurately measures surface waves at multiple locations by reflecting an array of lasers off the surface onto a screen, which is recorded by an Intensified-CCD camera. The measured dispersion relation is consistent with the linear theory with a reduced surface tension likely due to surface oxidation. In excellent agreement with linear theory, it is observed that surface waves are damped only when a horizontal magnetic field is imposed parallel to the propagation direction. No damping is observed under a perpendicular magnetic field. The existence of strong wave damping even without magnetic field suggests the importance of the surface oxide layer. Implications to the liquid metal wall concept in fusion reactors, especially on the wave damping and a Rayleigh-Taylor instability when the Lorentz force is used to support liquid metal layer against gravity, are discussed.

Hantao Ji; William Fox; David Pace; H.L. Rappaport

2004-05-13T23:59:59.000Z

64

By Deborah A. Kramer No gallium production was reported in the McDonnell Douglas Corp. reportedly will world producers were Australia, Germany, and  

E-Print Network [OSTI]

facility in optoelectronic devices [light-emitting diodes France from stockpiled crude gallium produced, and in 1994. Although the total quantity of gallium used in optoelectronic devices increased, its percentage

65

Deprotecting Thioacetyl-Terminated Terphenyldithiol for Assembly on Gallium Arsenide  

SciTech Connect (OSTI)

We characterize the assembly of terphenyldithiol (TPDT) on gallium arsenide (GaAs) from ethanol (EtOH) and tetrahydrofuran (THF) as a function of ammonium hydroxide (NH4OH) concentration. NH4OH facilitates the conversion of thioacetyl end groups of the TPDT precursor to thiolates in the assembly solution. The final structure of TPDT assembled on GaAs is sensitive not only to the assembly solvent but also to NH4OH concentration. In the presence of low concentrations of NH4OH (1 mM), TPDT assemblies from EtOH are oriented upright. The same assemblies are less upright when adsorption is carried out at higher NH4OH concentrations. In THF, TPDT does not adsorb significantly on GaAs at low NH4OH concentrations. The surface coverage and structural organization of these assemblies improve with increasing NH4OH concentrations, although these assemblies are never as organized as those from EtOH. The difference in the final structure of TPDT assemblies is attributed to differences in the thiolate fraction in the assembly solution at the point of substrate immersion.

Krapchetov,D.; Ma, H.; Jen, A.; Fischer, D.; Loo, Y.

2008-01-01T23:59:59.000Z

66

Analytic bond-order potential for the gallium arsenide system  

Science Journals Connector (OSTI)

An analytic, bond-order potential (BOP) is proposed and parametrized for the gallium arsenide system. The potential addresses primary (?) and secondary (?) bonding and the valence-dependent character of heteroatomic bonding, and it can be combined with an electron counting potential to address the distribution of electrons on the GaAs surface. The potential was derived from a tight-binding description of covalent bonding by retaining the first two levels of an expanded Green’s function for the ? and ? bond-order terms. Predictions using the potential were compared with independent estimates for the structures and binding energy of small clusters (dimers, trimers, and tetramers) and for various bulk lattices with coordinations varying from 4 to 12. The structure and energies of simple point defects and melting transitions were also investigated. The relative stabilities of the (001) surface reconstructions of GaAs were well predicted, especially under high-arsenic-overpressure conditions. The structural and binding energy trends of this GaAs BOP generally match experimental observations and ab initio calculations.

D. A. Murdick; X. W. Zhou; H. N. G. Wadley; D. Nguyen-Manh; R. Drautz; D. G. Pettifor

2006-01-20T23:59:59.000Z

67

Change in the current-carrier concentration upon doping PbTe with gallium  

SciTech Connect (OSTI)

Upon doping PbTe with gallium, both high-resistivity samples with intrinsic conductivity and low-resistivity samples with electronic conductivity (n/sub e/ = 10/sup 18/ cm/sup -3/) are produced on the PbTe-GaTe section. A thorough investigation of the dependence of the thermo-emf of Pb/sub 1-x/Ga/sub x/Te on the excess Pb and Te side showed the presence of a wide region with intrinsic conductivity. The experimental data can be explained by the fact that impure gallium in PbTe has negative Hubbard energy and stabilizes the Fermi level almost at the center of the forbidden band. At high gallium concentrations, Ga/sub 2/Te/sub 3/ precipitates at first, and then GaTe precipitates as well. The lead forming in excess transforms Ga/sup 3 +/ to Ga/sup +/, which produces the electronic conductivity in the material.

Bushmarina, G.S.; Gruzinov, B.F.; Drabkin, I.A.; Lev, E.Ya.; Moizhes, B.Ya; Suprun, S.G.

1987-07-01T23:59:59.000Z

68

Gallium diffusion into self-assembled InAs quantum dots grown on indium phosphide substrates  

SciTech Connect (OSTI)

The photoluminescence spectrum of small self-assembled In(Ga)As quantum dots grown on InP substrates is composed of distinct spectral lines. These lines correspond to monolayer variations in the dots smallest dimension: their heights. We use this phenomenon in order to study the diffusion of gallium atoms into the self-assembled quantum dots. We demonstrate that substantial amounts of gallium atoms diffuse from a strained GaInP layer underneath the quantum dots into the quantum dots.

Raz, T.; Shuall, N.; Bahir, G.; Ritter, D.; Gershoni, D.; Chu, S.N.G. [Department of Electrical Engineering, Technion - Israel Institute of Technology, Technion City, Haifa 32000 (Israel); Physics Department and The Solid State Institute, Technion - Israel Institute of Technology, Technion City, Haifa 32000 (Israel); Multiplex, Inc., 5000 Hadley Rd., South Plainfield, New Jersey 07080 (United States)

2004-10-18T23:59:59.000Z

69

Millimeter wave ferromagnetic resonance in gallium-substituted ?-iron oxide  

SciTech Connect (OSTI)

In millimeter wave frequency range, hexagonal ferrites with high uniaxial anisotropic magnetic fields are used as absorbers. These ferrites include M-type barium ferrite (BaFe{sub 12}O{sub 19}) and strontium ferrite (SrFe{sub 12}O{sub 19}), which have natural ferromagnetic resonant frequency range from 40 GHz to 60?GHz. However, the higher frequency range lacks suitable materials that support the higher frequency ferromagnetic resonance. A new series of gallium-substituted ?-iron oxides (?-Ga{sub x}Fe{sub 2?x}O{sub 3}) are synthesized which have ferromagnetic resonant frequencies appearing over the frequency range 30 GHz–150 GHz. The ?-Ga{sub x}Fe{sub 2?x}O{sub 3} is synthesized by the combination of reverse micelle and sol-gel techniques or the sol-gel method only. The particle sizes are observed to be smaller than 100 nm. In this paper, the free space magneto-optical approach has been employed to study these newly developed ?-Ga{sub x}Fe{sub 2?x}O{sub 3} particles in millimeter waves. This technique enables to obtain precise transmission spectra to determine the dielectric and magnetic properties of both isotropic and anisotropic ferrites in the millimeter wave frequency range from a single set of direct measurements. The transmittance and absorbance spectra of ?-Ga{sub x}Fe{sub 2?x}O{sub 3} are shown in this paper. Strong ferromagnetic resonances at different frequencies determined by the x parameter are found.

Chao, Liu, E-mail: liu.chao@tufts.edu; Afsar, Mohammed N. [Department of Electrical and Computer Engineering, Tufts University, Medford, Massachusetts 02155 (United States); Ohkoshi, Shin-ichi [Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

2014-05-07T23:59:59.000Z

70

Investigation of Gallium Partitioning Behavior in Aqueous Two-Phase Systems Containing Polyethylene Glycol and Ammonium Sulfate  

Science Journals Connector (OSTI)

Gallium is assumed to be an indispensable rare metal mainly because of its fast growing demand as gallium arsenide (GaAs) in integrated circuits. ... Traditional extraction methods for gallium usually are organic?water two-phase systems, which involve volatile, flammable, and explosive organic solvents, such as n-hexane, toluene, xylene, benzene, nitrobenzene and kerosene. ... (17) A temperature increase reduces the mutual solubility of the two phases and results in an increase of PEG concentration in the upper phase and of volume in the lower phase, which all make ?w1 increase. ...

Yuhuan Chen; Xiaoli Liu; Yan Lu; Xiuying Zhang

2009-04-22T23:59:59.000Z

71

Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire-array  

E-Print Network [OSTI]

Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire, and will aid in the design and optimization of nanowire-based systems for solar energy-conversion applications, and the photoelectrochemical energy-conversion properties of GaAs nanowire arrays were evaluated in contact with one

Zhou, Chongwu

72

Molten Gallium as a Catalyst for the Large-Scale Growth of Highly Aligned Silica Nanowires  

E-Print Network [OSTI]

Molten Gallium as a Catalyst for the Large-Scale Growth of Highly Aligned Silica Nanowires Zheng a small size (5-100 nm in diameter), high melting point metal (such as gold and iron) catalyst particle as an effective catalyst for the large-scale growth of highly aligned, closely packed silica nanowire bunches

Wang, Zhong L.

73

GALLIUM--2003 28.1 References that include a section mark () are found in the Internet  

E-Print Network [OSTI]

in the United States was in the form of GaAs. GaAs was manufactured into optoelectronic devices (LEDs, laser diodes, photodetectors, and solar cells) and ICs. ICs and optoelectronic devices each accounted for 41) and optoelectronic devices [mostly laser diodes and light- emitting diodes (LEDs)]. Estimated crude gallium

74

Preliminary results from the Russian-American gallium experiment Cr-neutrino source measurement  

SciTech Connect (OSTI)

The Russian-American Gallium Experiment has been collecting solar neutrino data since early 1990. The flux measurement of solar neutrinos is well below that expected from solar models. We discuss the initial results of a measurement of experimental efficiencies by exposing the gallium target to neutrinos from an artificial source. The capture rate of neutrinos from this source is very close to that which is expected. The result can be expressed as a ratio of the measured capture rate to the anticipated rate from the source activity. This ratio is 0.93 + 0.15, {minus}0.17 where the systematic and statistical errors have been combined. To first order the experimental efficiencies are in agreement with those determined during solar neutrino measurements and in previous auxiliary measurements. One must conclude that the discrepancy between the measured solar neutrino flux and that predicted by the solar models can not arise from an experimental artifact. 17 refs., 3 figs., 1 tab.

Elliott, S.R. [Washington Univ., Seattle, WA (United States); Abdurashitov, J.N. [Russian Academy of Sciences, Moscow (Russian Federation). Inst. for Nuclear Research; Bowles, T.J. [Los Alamos National Lab., NM (United States)] [and others

1995-12-31T23:59:59.000Z

75

Fast neutron scattering on Gallium target at 14.8 MeV  

E-Print Network [OSTI]

Benchmarking of evaluated nuclear data libraries was performed for $\\sim 14.8$ MeV neutrons on Gallium targets. The experiments were performed at China Institute of Atomic Energy(CIAE). Solid samples of natural Gallium (3.2 cm and 6.4 cm thick) were bombarded by $\\sim 14.8$ MeV neutrons and leakage neutron energy spectra were measured at 60$^{\\circ}$ and 120$^{\\circ}$. The measured spectra are rather well reproduced by MCNP-4C simulations with the CENDL-3.1, ENDF/B-VII and JENDL-4.0 evaluated nuclear data libraries, except for the inelastic contributions around $E_{n} = 10-13$ MeV. All three libraries significantly underestimate the inelastic contributions. The inelastic contributions are further studied, using the Talys simulation code and the experimental spectra are reproduced reasonably well in the whole energy range by the Talys calculation, including the inelastic contributions.

Han, R; Chen, Z; Nie, Y; Liu, X; Zhang, S; Ren, P; Jia, B; Tian, G; Luo, F; Lin, W; Liu, J; Shi, F; Huang, M; Ruan, X; Ren, J; Zhou, Z; Huang, H; Bao, J; Zhang, K; Hu, B

2014-01-01T23:59:59.000Z

76

Fast neutron scattering on Gallium target at 14.8 MeV  

E-Print Network [OSTI]

Benchmarking of evaluated nuclear data libraries was performed for $\\sim 14.8$ MeV neutrons on Gallium targets. The experiments were performed at China Institute of Atomic Energy(CIAE). Solid samples of natural Gallium (3.2 cm and 6.4 cm thick) were bombarded by $\\sim 14.8$ MeV neutrons and leakage neutron energy spectra were measured at 60$^{\\circ}$ and 120$^{\\circ}$. The measured spectra are rather well reproduced by MCNP-4C simulations with the CENDL-3.1, ENDF/B-VII and JENDL-4.0 evaluated nuclear data libraries, except for the inelastic contributions around $E_{n} = 10-13$ MeV. All three libraries significantly underestimate the inelastic contributions. The inelastic contributions are further studied, using the Talys simulation code and the experimental spectra are reproduced reasonably well in the whole energy range by the Talys calculation, including the inelastic contributions.

R. Han; R. Wada; Z. Chen; Y. Nie; X. Liu; S. Zhang; P. Ren; B. Jia; G. Tian; F. Luo; W. Lin; J. Liu; F. Shi; M. Huang; X. Ruan; J. Ren; Z. Zhou; H. Huang; J. Bao; K. Zhang; B. Hu

2014-11-03T23:59:59.000Z

77

Thermodynamic property evaluation and magnetic refrigeration cycle analysis for gadolinium gallium garnet  

SciTech Connect (OSTI)

Based on relevant material property data and previous model formulations, a magnetothermodynamic property map for gadolinium gallium garnet (Gd{sub 3}Ga{sub 5}O{sub 12}) was adapted for refrigeration cycle analysis in the temperature range 4-40 K and the magnetic field range 0-6 T. Employing methods similar to those previously developed for other materials and temperature ranges, assessments of limitations and relative performance were made for Carnot, ideal regenerative, and pseudo-constant field regenerative cycles. It was found that although Carnot cycle limitations on available temperature lift for gadolinium gallium garnet are not as severe as the limitations for materials previously examined, considerable improvement in cooling capacity and temperature lift combinations can be achieved by using regenerative cycles if serious loss mechanisms are avoided.

Murphy, R.W.

1994-12-01T23:59:59.000Z

78

Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors  

SciTech Connect (OSTI)

In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Sze, Simon M. [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China)

2014-04-14T23:59:59.000Z

79

Synthesis of graphene nanoribbons from amyloid templates by gallium vapor-assisted solid-phase graphitization  

SciTech Connect (OSTI)

Single- and double-layer graphene nanoribbons (GNRs) with widths of around 10?nm were synthesized directly onto an insulating substrate by solid-phase graphitization using a gallium vapor catalyst and carbon templates made of amyloid fibrils. Subsequent investigation revealed that the crystallinity, conductivity, and carrier mobility were all improved by increasing the temperature of synthesis. The carrier mobility of the GNR synthesized at 1050?°C was 0.83 cm{sup 2}/V?s, which is lower than that of mechanically exfoliated graphene. This is considered to be most likely due to electron scattering by the defects and edges of the GNRs.

Murakami, Katsuhisa, E-mail: k.murakami@bk.tsukuba.ac.jp; Dong, Tianchen; Kajiwara, Yuya; Takahashi, Teppei; Fujita, Jun-ichi [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Tsukuba Research Center for Interdisciplinary Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Hiyama, Takaki; Takai, Eisuke; Ohashi, Gai; Shiraki, Kentaro [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)

2014-06-16T23:59:59.000Z

80

Polythiophene-based charge dissipation layer for electron beam lithography of zinc oxide and gallium nitride  

Science Journals Connector (OSTI)

The ability of thin polythiophene layers to dissipate accumulated charge in the electron beam lithography (EBL) of wide bandgap semiconductors such as zinc oxide and gallium nitride is demonstrated. A quick and inexpensive processing method is demonstrated for EBL exposure of dense and high-resolution patterns in a hydrogen silsesquioxane (HSQ) negative-tone resistdeposited on bulk ZnO samples and with GaN/AlN on sapphire substrates. For the former experimental results are given for three different cases: where no charge dissipation layer was used as well as cases where 40-nm-thick Al and 100-nm-thick conductive polymer layers were used on the top of the HSQ resist. For the latter material EBL exposure was investigated for pure HSQ and for HSQ with a thin conductive polymer layer on top. Based on the scanning electron microscope observations of the resulting photonic crystal(PhC) pattern conventional Al and the proposed polymer approach were compared. Good agreement between these results is reported while the new method considerably simplifies sample processing. Spin-coatable conducting polymer may be easily removed due to its solubility in water which makes it a perfect solution for the processing of amphoteric oxide samples i.e. zinc oxide. Gallium nitride processing also benefits from polymer dissipation layer usage due to extended exposure range and the avoidance of dense pattern overexposure in HSQ.

R. Dylewicz; S. Lis; R. M. De La Rue; F. Rahman

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Characterization of gallium-doped CdS thin films grown by chemical bath Hani Khallaf a  

E-Print Network [OSTI]

Characterization of gallium-doped CdS thin films grown by chemical bath deposition Hani Khallaf In-situ doping with group III elements has been widely used to decrease the dark resistivity of CdS technique for aluminum in-situ doping of CdS. We have also shown that due to extremely low solubility

Chow, Lee

82

Synthesis of Gallium Oxide Hydroxide Crystals in Aqueous Solutions with or without Urea and Their Calcination Behavior  

E-Print Network [OSTI]

solution of gallium(III) nitrate and stirring at 90°C for 10 h, followed by calcination of the recovered of solid electro- lytes of superior (as compared with Y-stabilized zirconia) ionic conductivity, i.e., La0-chemical synthesis of powders of doped LaGaO3 fuel cell ceramics.24,25 The first experimental study

Tas, A. Cuneyt

83

An assessment of the validity of cerium oxide as a surrogate for plutonium oxide gallium removal studies  

SciTech Connect (OSTI)

Methods for purifying plutonium metal have long been established. These methods use acid solutions to dissolve and concentrate the metal. However, these methods can produce significant mixed waste, that is, waste containing both radioactive and chemical hazards. The volume of waste produced from the aqueous purification of thousands of weapons would be expensive to treat and dispose. Therefore, a dry method of purification is highly desirable. Recently, a dry gallium removal research program commenced. Based on initial calculations, it appeared that a particular form of gallium (gallium suboxide, Ga{sub 2}O) could be evaporated from plutonium oxide in the presence of a reducing agent, such as small amounts of hydrogen dry gas within an inert environment. Initial tests using ceria-based material (as a surrogate for PuO{sub 2}) showed that thermally-induced gallium removal (TIGR) from small samples (on the order of one gram) was indeed viable. Because of the expense and difficulty of optimizing TIGR from plutonium dioxide, TIGR optimization tests using ceria have continued. This document details the relationship between the ceria surrogate tests and those conducted using plutonia.

Kolman, D.G.; Park, Y.; Stan, M.; Hanrahan, R.J. Jr.; Butt, D.P.

1999-03-01T23:59:59.000Z

84

Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy  

E-Print Network [OSTI]

Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride to examine the effects of carbon tetrachloride concentration and temperature on the morphology of carbon with increasing carbon tetrachloride concentration. Step bunching and pinning was observed at a IV/III ratio

Li, Lian

85

Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR spectroscopy  

SciTech Connect (OSTI)

Ordering of gallium(III) in a series of magnesium gallium layered double hydroxides (LDH’s), [Mg1-xGax(OH)2(NO3)x yH2O], was determined using solid-state 1H and 71Ga NMR spectroscopy. Depletion of Ga in these LDH’s is demonstrated to be the result of soluble [Ga(OH)4]-complexes formed during synthesis.

Petersen, Line B.; Lipton, Andrew S.; Zorin, Vadim; Nielsen, Ulla Gro

2014-11-01T23:59:59.000Z

86

Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope  

SciTech Connect (OSTI)

We used a broadband, atomic-force-microscope-based, scanning microwave microscope (SMM) to probe the axial dependence of the charge depletion in a p-n junction within a gallium nitride nanowire (NW). SMM enables the visualization of the p-n junction location without the need to make patterned electrical contacts to the NW. Spatially resolved measurements of S{sub 11}{sup ?}, which is the derivative of the RF reflection coefficient S{sub 11} with respect to voltage, varied strongly when probing axially along the NW and across the p-n junction. The axial variation in S{sub 11}{sup ?}? effectively mapped the asymmetric depletion arising from the doping concentrations on either side of the junction. Furthermore, variation of the probe tip voltage altered the apparent extent of features associated with the p-n junction in S{sub 11}{sup ?} images.

Imtiaz, Atif [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Wallis, Thomas M.; Brubaker, Matt D.; Blanchard, Paul T.; Bertness, Kris A.; Sanford, Norman A.; Kabos, Pavel, E-mail: kabos@boulder.nist.gov [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Weber, Joel C. [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Coakley, Kevin J. [Information Technology Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States)

2014-06-30T23:59:59.000Z

87

Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen  

SciTech Connect (OSTI)

The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

Sallis, S.; Williams, D. S. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States); Butler, K. T.; Walsh, A. [Center for Sustainable Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Quackenbush, N. F. [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Junda, M.; Podraza, N. J. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Fischer, D. A.; Woicik, J. C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); White, B. E.; Piper, L. F. J., E-mail: lpiper@binghamton.edu [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

2014-06-09T23:59:59.000Z

88

Catalytic and physicochemical properties of aluminoplatinum catalysts modified with indium and gallium  

SciTech Connect (OSTI)

Aluminoplatinum catalysts (APC) are widely used in transformations of hydrocarbons, particularly in reforming of gasoline fractions and dehydrogenation of higher normal paraffins. Promotion of APC with indium and gallium increases their activity and stability in the dehydrogenation of paraffins. Introduction of group III elements in APC inhibits coke formation during dehydrogenation and prevents blocking of the surface of the Pt. The change in the catalytic properties of APC modified with In is due to the partial transfer of the electron density from Pt to In. Both APC with In and Ga additives and monometallic catalysts were studied in the present article by the methods of IR spectroscopy and adsorption. In addition to traditional transmission IR spectroscopy, IR spectroscopy in diffusely scattered light was used, which permits conducting both spectral and adsorption measurements on the same samples.

Zaitsev, A.V.; Tyupaev, A.P.; Borovkov, V.Yu.; Timofeeva, E.A.; Isatulyants, G.V.; Kazanskii, B.B.

1986-10-10T23:59:59.000Z

89

Plasma Sputter-type Ion Source with Wire Electrodes for Low-energy Gallium Ion Extraction  

SciTech Connect (OSTI)

Low-energy ions of gallium (Ga) and argon (Ar) were extracted from a plasma sputter-type ion source system that utilized a tungsten (W) wire extractor geometry. The 90% transparent W wire extractor configuration had shown that the system was capable of producing an ion beam with the energy as low as 10 eV in a dc filament discharge and 50 eV in a radio frequency (rf) excited system. In the present investigation, Ar plasma was sustained in an ion source chamber through an inductively coupled 13.56 MHz rf power source. Negatively biased liquid Ga target suspended on a W reservoir was sputtered and postionized prior to extraction. Mass spectral analyses revealed a strong dependence of the Ga{sup +} current on the induced target bias.

Vasquez, M. Jr.; Kasuya, T.; Wada, M. [Graduate School of Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321 (Japan); Maeno, S. [Novelion Systems Co. Ltd., Kyotanabe, Kyoto 610-0332 (Japan); Miyamoto, N. [Nissin Ion Equipment Co. Ltd., Minami-ku, Kyoto 601-8205 (Japan)

2011-01-07T23:59:59.000Z

90

The status of the solar neutrino problem and the Russian-American gallium experiment (SAGE)  

SciTech Connect (OSTI)

Perhaps the most outstanding discrepancy between prediction and measurements in current particle physics comes from the solar neutrino problem, in which a large deficit of high-energy solar neutrinos is observed. Many Nonstandard Solar Models have been invoked to try to reduce the predicted flux, but all have run into problems in trying to reproduce other measured parameters (e.g., the luminosity) of the Sun. Other explanations involving new physics such as neutrino decay and neutrino oscillations, etc. have also been proffered. Again, most of these explanations have been ruled out by either laboratory or astrophysical measurements. It appears that perhaps the most likely particle physics solution is that of matter enhanced neutrino oscillation, the Mikheyev-Smirnov-Wolfenstein (MSW) oscillations. Two new radiochemical gallium experiments, which have a low enough threshold to be sensitive to the dominant flux of low-energy p-p neutrinos, now also report a deficit and also favor a particle physics solution.

Bowles, T.J.

1994-04-01T23:59:59.000Z

91

Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module  

SciTech Connect (OSTI)

We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

2013-06-01T23:59:59.000Z

92

Solvent-Dependent Assembly of Terphenyl- and Quaterphenyldithiol on Gold and Gallium Arsenide  

Science Journals Connector (OSTI)

Solvent-Dependent Assembly of Terphenyl- and Quaterphenyldithiol on Gold and Gallium Arsenide ... This solvent pair was chosen because of an apparent solubility conflict:? while EtOH is the most common solvent for assembling alkylthiol and conjugated monothiol molecules,43-45 the longer n-phenyldithiols (n = 3, 4), in their thioacetyl forms (compounds 3 and 4 in Scheme 1), are poorly soluble in EtOH. ... The precipitate was filtered, washed with water, hexane, and methylene chloride, and dried overnight at 40 °C under vacuum to afford a light-yellow solid (5.90 g, 92%). 1H NMR (200 MHz, CDCl3) ? 7.65 (s, 4H), 7.55 (d, J = 8.0 Hz, 4H), 7.32 (d, J = 8.0 Hz, 4H), 2.55 (s, 6H). ...

Dmitry A. Krapchetov; Hong Ma; Alex K. Y. Jen; Daniel A. Fischer; Yueh-Lin Loo

2005-05-17T23:59:59.000Z

93

Femtosecond laser-ultrasonic investigation of plasmonic fields on the metal/gallium nitride interface  

Science Journals Connector (OSTI)

By using femtosecond laser-ultrasonic we demonstrate an approach to study the surface plasmon field optically excited in the interface between metal and a semiconductor thin film. By femtosecond impulsive excitation on gallium–nitride (GaN) different optical probe signals were observed when the impulse-excited nanoacoustic pulse propagated through the metalfilm and metal nanoslits. By analyzing the shape and temporal response of thus induced acousto-optical signals our femtosecond laser-ultrasonic study not only reveals the plasmonic field distribution optically excited in the metal/substrate interface but also confirms that the penetration depth of surface plasmon field into the substrate agrees well with a simulation result.

Hung-Pin Chen; Yu-Chieh Wen; Yi-Hsin Chen; Cheng-Hua Tsai; Kuang-Li Lee; Pei-Kuen Wei; Jinn-Kong Sheu; Chi-Kuang Sun

2010-01-01T23:59:59.000Z

94

Reference Data for the Density and Viscosity of Liquid Cadmium, Cobalt, Gallium, Indium, Mercury, Silicon, Thallium, and Zinc  

SciTech Connect (OSTI)

The available experimental data for the density and viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc have been critically examined with the intention of establishing both a density and a viscosity standard. All experimental data have been categorized into primary and secondary data according to the quality of measurement, the technique employed and the presentation of the data, as specified by a series of criteria. The proposed standard reference correlations for the density of liquid cadmium, cobalt, gallium, indium, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 0.6, 2.1, 0.4, 0.5, 2.2, 0.9, and 0.7, respectively. In the case of mercury, since density reference values already exist, no further work was carried out. The standard reference correlations for the viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 9.4, 14.0, 13.5, 2.1, 7.3, 15.7, 5.1, and 9.3, respectively.

Assael, Marc J.; Armyra, Ivi J.; Brillo, Juergen; Stankus, Sergei V.; Wu Jiangtao; Wakeham, William A. [Chemical Engineering Department, Aristotle University, 54124 Thessaloniki (Greece); Institut fuer Materialphysik im Weltraum, Deutsches Zentrum fuer Luft- und Raumfahrt, 51170 Koeln (Germany); Kutateladze Institute of Thermophysics, Siberian Brunch of the Russian Academy of Sciences, Lavrentyev ave. 1, 630090 Novosibirsk (Russian Federation); Center of Thermal and Fluid Science, School of Energy and Power Engineering, Xi'an Jiaotong University, Shaanxi 710049 (China); Chemical Engineering Department, Imperial College, London SW7 2BY (United Kingdom)

2012-09-15T23:59:59.000Z

95

Evaluation of critical materials for five advanced design photovoltaic cells with an assessment of indium and gallium  

SciTech Connect (OSTI)

The objective of this study is to identify potential material supply constraints due to the large-scale deployment of five advanced photovoltaic (PV) cell designs, and to suggest strategies to reduce the impacts of these production capacity limitations and potential future material shortages. This report presents the results of the screening of the five following advanced PV cell designs: polycrystalline silicon, amorphous silicon, cadmium sulfide/copper sulfide frontwall, polycrystalline gallium arsenide MIS, and advanced concentrator-500X. Each of these five cells is screened individually assuming that they first come online in 1991, and that 25 GWe of peak capacity is online by the year 2000. A second computer screening assumes that each cell first comes online in 1991 and that each cell has 5 GWe of peak capacity by the year 2000, so that the total online cpacity for the five cells is 25 GWe. Based on a review of the preliminary basline screening results, suggestions were made for varying such parameters as the layer thickness, cell production processes, etc. The resulting PV cell characterizations were then screened again by the CMAP computer code. Earlier DOE sponsored work on the assessment of critical materials in PV cells conclusively identtified indium and gallium as warranting further investigation as to their availability. Therefore, this report includes a discussion of the future availability of gallium and indium. (WHK)

Watts, R.L.; Gurwell, W.E.; Jamieson, W.M.; Long, L.W.; Pawlewicz, W.T.; Smith, S.A.; Teeter, R.R.

1980-05-01T23:59:59.000Z

96

More Efficient Power Conversion for EVs: Gallium-Nitride Advanced Power Semiconductor and Packaging  

SciTech Connect (OSTI)

Broad Funding Opportunity Announcement Project: Delphi is developing power converters that are smaller and more energy efficient, reliable, and cost-effective than current power converters. Power converters rely on power transistors which act like a very precisely controlled on-off switch, controlling the electrical energy flowing through an electrical circuit. Most power transistors today use silicon (Si) semiconductors. However, Delphi is using semiconductors made with a thin layer of gallium-nitride (GaN) applied on top of the more conventional Si material. The GaN layer increases the energy efficiency of the power transistor and also enables the transistor to operate at much higher temperatures, voltages, and power-density levels compared to its Si counterpart. Delphi is packaging these high-performance GaN semiconductors with advanced electrical connections and a cooling system that extracts waste heat from both sides of the device to further increase the device’s efficiency and allow more electrical current to flow through it. When combined with other electronic components on a circuit board, Delphi’s GaN power transistor package will help improve the overall performance and cost-effectiveness of HEVs and EVs.

None

2010-02-01T23:59:59.000Z

97

Electrodeposition of Crystalline GaAs on Liquid Gallium Electrodes in Aqueous Electrolytes  

Science Journals Connector (OSTI)

Crystalline gallium arsenide (c-GaAs) possesses many desirable optoelectronic properties suited for solar energy conversion,(1) light and radiation detection,(2) chemical sensing,(3) lighting,(4) and high speed electronics. ... In contrast to conflicting previous reports on the electrodeposition of GaAs,(17, 18) we posit that c-GaAs(s) can be synthesized predictably through the electrodeposition of As from dissolved As2O3 specifically on a Ga(l) electrode at modest temperatures in water. ... Specifically, for any binary system composed of a solid dissolving into a liquid, the rate of dissolution of the solid into the liquid phase is given by eq 5:(60)(5)where kdiss is the dissolution rate constant, s is the surface area of the solid in contact with the liquid, V is the volume of the liquid, Csat is the solubility of the solid in the liquid, and Cdiss is the concentration of the dissolved solid in the bulk of the liquid phase. ...

Eli Fahrenkrug; Junsi Gu; Stephen Maldonado

2012-12-24T23:59:59.000Z

98

Lewis Base Adduct Stabilized Organogallium Azides:? Synthesis and Dynamic NMR Spectroscopic Studies of Novel Precursors to Gallium Nitride and Role of Ammonia as Reactive Carrier Gas  

Science Journals Connector (OSTI)

Lewis Base Adduct Stabilized Organogallium Azides:? Synthesis and Dynamic NMR Spectroscopic Studies of Novel Precursors to Gallium Nitride and Role of Ammonia as Reactive Carrier Gas ... Solvents were dried under argon according to standard methods; n-pentane and toluene were stored over Na/K alloy, and diethyl ether and thf over potassium benzophenoate (residual water solubility in other solvents than thf. ...

Alexander Miehr; Mike R. Mattner; Roland A. Fischer

1996-04-16T23:59:59.000Z

99

The reaction of carbon tetrachloride with gallium arsenide ,,001... L. Li., S, Gan, B.-K. Han, H. Qi, and R. F. Hicksa)  

E-Print Network [OSTI]

The reaction of carbon tetrachloride with gallium arsenide ,,001... L. Li., S, Gan, B.-K. Han, H, California 90095 Received 26 June 1997; accepted for publication 30 December 1997 Carbon tetrachloride of steps during the vapor-phase epitaxial growth of III­V compound semiconductors.3,4 Carbon tetrachloride

Li, Lian

100

The influence of prestrained metalorganic vapor phase epitaxial gallium-nitride templates on hydride vapor phase epitaxial growth  

Science Journals Connector (OSTI)

We have varied the strain situation in metalorganic vapor phase epitaxial (MOVPE) grown gallium-nitride (GaN) by exchanging the nucleation layer and by inserting a submono-Si x N y -interlayer in the first few hundred nanometers of growth on sapphire substrates. The influence on the MOVPE template and subsequent hydride vapor phase epitaxial (HVPE) growth could be shown by in-situ measurements of the sample curvature. Using the results of these investigations we have established a procedure to confine the curvature development in MOVPE and HVPE growth to a minimum. By increasing the layer thickness in HVPE we could create self-separated freestanding GaN layers with small remaining curvature.

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

An experiment to test the viability of a gallium-arsenide cathode in a SRF electron gun  

SciTech Connect (OSTI)

Strained gallium arsenide cathodes are used in electron guns for the production of polarized electrons. In order to have a sufficient quantum efficiency lifetime of the cathode the vacuum in the gun must be 10{sup -11} Torr or better, so that the cathode is not destroyed by ion back bombardment or through contamination with residual gases. All successful polarized guns are DC guns, because such vacuum levels can not be obtained in normal conducting RF guns. A superconductive RF gun may provide a sufficient vacuum level due to cryo-pumping of the cavity walls. We report on the progress of our experiment to test such a gun with normal GaAs-Cs crystals.

Kewisch,J.; Ben-Zvi, I.; Rao, T.; Burrill, A.; Pate, D.; Wu, Q.; Todd, R.; Wang, E.; Bluem, H.; Holmes, D.; Schultheiss, T.

2009-05-04T23:59:59.000Z

102

Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere  

SciTech Connect (OSTI)

An isotope tracer study, i.e., {sup 18}O/{sup 16}O exchange using {sup 18}O{sub 2} and H{sub 2}{sup 18}O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium–gallium–zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200?°C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for {sup 18}O{sub 2} than for H{sub 2}{sup 18}O. PDA in a humid atmosphere at 400?°C further suppressed the reactivity of O{sub 2} at the a-IGZO film surface, which is attributable to –OH-terminated surface formation.

Watanabe, Ken, E-mail: Watanabe.Ken@nims.go.jp [International Center for Young Scientists (ICYS-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan)] [International Center for Young Scientists (ICYS-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan); Lee, Dong-Hee [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan) [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan); Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Sakaguchi, Isao; Haneda, Hajime [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan)] [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan); Nomura, Kenji [Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)] [Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Kamiya, Toshio [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan) [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Hosono, Hideo [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan) [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Ohashi, Naoki, E-mail: Ohashi.Naoki@nims.go.jp [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan) [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)

2013-11-11T23:59:59.000Z

103

Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications  

SciTech Connect (OSTI)

The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of {approximately} 10{sup 4} shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10{sup 8} shots for electro-optic drivers. Much effort is currently being channeled in the study related to improvements of these two parameters high bias operation and lifetime improvement for switches used in pulsed power applications. The contact material and profiles are another important area of study. Although these problems are being pursued through the incorporation of different contact materials and introducing doping near contacts, it is important that the switch properties and the conduction mechanism in these switches be well understood such that the basic nature of the problems can be properly addressed. In this paper the authors report on these two basic issues related to the device operation, i.e., mechanisms for increasing the hold-off characteristics through neutron irradiation, and the analysis of transport processes at varying field conditions in trap dominated SI GaAs in order to identify the breakdown mechanism during device operation. It is expected that this study would result in a better understanding of photoconductive switches, specifically those used in high power operation.

ISLAM,N.E.; SCHAMILOGLU,E.; MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; JOSHI,R.P.

2000-05-30T23:59:59.000Z

104

A final report for Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons  

E-Print Network [OSTI]

This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of Al sub x Ga sub 1 sub - sub x As. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10 sup - sup 1 sup 2 amps at -1 V o...

Vernon, S M

1999-01-01T23:59:59.000Z

105

Electrical Bias as an Alternate Method for Reproducible Measurement of Copper Indium Gallium Diselenide (CIGS) Photovoltaic Modules: Preprint  

SciTech Connect (OSTI)

Light-to-dark metastable changes in thin-film photovoltaic (PV) modules can introduce uncertainty when measuring module performance on indoor flash testing equipment. This study describes a method to stabilize module performance through forward-bias current injection rather than light exposure. Measurements of five pairs of thin-film copper indium gallium diselenide (CIGS) PV modules indicate that forward-bias exposure maintained the PV modules at a stable condition (within 1%) while the unbiased modules degraded in performance by up to 12%. It was additionally found that modules exposed to forward bias exhibited stable performance within about 3% of their long-term outdoor exposed performance. This carrier-injection method provides a way to reduce uncertainty arising from fast transients in thin-film module performance between the time a module is removed from light exposure and when it is measured indoors, effectively simulating continuous light exposure by injecting minority carriers that behave much as photocarriers do. This investigation also provides insight into the initial light-induced transients of thin-film modules upon outdoor deployment.

Deline, C.; Stokes, A.; Silverman, T. J.; Rummel, S.; Jordan, D.; Kurtz, S.

2012-08-01T23:59:59.000Z

106

Effect of substrate temperature on crystal orientation and residual stress in radio frequency sputtered gallium–nitride films  

Science Journals Connector (OSTI)

The crystal orientation and residual stress in gallium nitride(GaN)filmsdeposited on a single-crystal (0001) sapphire substrate using a sputtering system are examined through x-ray diffraction measurements as part of a study of low-temperaturesputtering techniques for GaN. The rf sputtering system has an isolated deposition chamber to prevent contamination with impurities and is expected to produce high-purity nitride films.GaNfilms are deposited at various substrate temperatures and constant gas pressure and input power. This system is found to produce GaNfilms with good crystal orientation with the c axes of GaN crystals oriented normal to the substrate surface. The crystal size of filmsdeposited at high temperature is larger than that deposited at low T s . All films except that deposited at 973 K exhibit compressive residual stress and this residual stress is found to decrease with increasing temperature. Finally the filmdeposited at 973 K was tinged with white and the surface contained numerous microcracks.

Kazuya Kusaka; Takao Hanabusa; Kikuo Tominaga; Noriyoshi Yamauchi

2004-01-01T23:59:59.000Z

107

CO{sub 2} laser-based dispersion interferometer utilizing orientation-patterned gallium arsenide for plasma density measurements  

SciTech Connect (OSTI)

A dispersion interferometer based on the second-harmonic generation of a carbon dioxide laser in orientation-patterned gallium arsenide has been developed for measuring electron density in plasmas. The interferometer includes two nonlinear optical crystals placed on opposite sides of the plasma. This instrument has been used to measure electron line densities in a pulsed radio-frequency generated argon plasma. A simple phase-extraction technique based on combining measurements from two successive pulses of the plasma has been used. The noise-equivalent line density was measured to be 1.7 × 10{sup 17} m{sup ?2} in a detection bandwidth of 950 kHz. One of the orientation-patterned crystals produced 13 mW of peak power at the second-harmonic wavelength from a carbon dioxide laser with 13 W of peak power. Two crystals arranged sequentially produced 58 mW of peak power at the second-harmonic wavelength from a carbon dioxide laser with 37 W of peak power.

Bamford, D. J.; Cummings, E. A.; Panasenko, D. [Physical Sciences Inc., 6652 Owens Drive, Pleasanton, California 94588 (United States)] [Physical Sciences Inc., 6652 Owens Drive, Pleasanton, California 94588 (United States); Fenner, D. B.; Hensley, J. M. [Physical Sciences Inc., 20 New England Business Center, Andover, Massachusetts 01810 (United States)] [Physical Sciences Inc., 20 New England Business Center, Andover, Massachusetts 01810 (United States); Boivin, R. L.; Carlstrom, T. N.; Van Zeeland, M. A. [General Atomics, P.O. Box 85608, San Diego, California 92186 (United States)] [General Atomics, P.O. Box 85608, San Diego, California 92186 (United States)

2013-09-15T23:59:59.000Z

108

Hort-Range Wetting at Liquid Gallium-Bismuth Alloy Surfaces: X-ray Measurements and Square-Gradient Theory  

SciTech Connect (OSTI)

We present an x-ray reflectivity study of wetting at the free surface of the binary liquid metal alloy gallium-bismuth (Ga-Bi) in the region where the bulk phase separates into Bi-rich and Ga-rich liquid phases. The measurements reveal the evolution of the microscopic structure of the wetting films of the Bi-rich, low-surface-tension phase along several paths in the bulk phase diagram. The wetting of the Ga-rich bulk's surface by a Bi-rich wetting film, the thickness of which is limited by gravity to only 50 Angstroms, creates a Ga-rich/Bi-rich liquid/liquid interface close enough to the free surface to allow its detailed study by x rays. The structure of the interface is determined with Angstromsngstrem resolution, which allows the application of a mean-field square gradient model extended by the inclusion of capillary waves as the dominant thermal fluctuations. The sole free parameter of the gradient model, the influence parameter K, that characterizes the influence of concentration gradients on the interfacial excess energy, is determined from our measurements. This, in turn, allows a calculation of the liquid/liquid interfacial tension, and a separation of the intrinsic and capillary wave contributions to the interfacial structure. In spite of expected deviations from MF behavior, based on the upper critical dimensionality (Du = 3 ) of the bulk, we find that the capillary wave excitations only marginally affect the short-range complete wetting behavior. A critical wetting transition that is sensitive to thermal fluctuations appears to be absent in this binary liquid-metal alloy.

Huber, P.; Shpyrko, O; Pershan, P; Ocko, B; DiMasi, E; Deutsch, M

2009-01-01T23:59:59.000Z

109

Ion exchange separation of plutonium and gallium (1) resource and inventory requirements, (2) waste, emissions, and effluent, and (3) facility size  

SciTech Connect (OSTI)

The following report summarizes an effort intended to estimate within an order-of-magnitude the (1) resource and inventory requirements, (2) waste, emissions, and effluent amounts, and (3) facility size, for ion exchange (IX) separation of plutonium and gallium. This analysis is based upon processing 3.5 MT-Pu/yr. The technical basis for this summary is detailed in a separate document, {open_quotes}Preconceptual Design for Separation of Plutonium and Gallium by Ion Exchange{close_quotes}. The material balances of this separate document are based strictly on stoichiometric amounts rather than details of actual operating experience, in order to avoid classification as Unclassified Controlled Nuclear Information. This approximation neglets the thermodynamics and kinetics which can significantly impact the amount of reagents required. Consequently, the material resource requirements and waste amounts presented here would normally be considered minimums for processing 3.5 MT-Pu/yr; however, the author has compared the inventory estimates presented with that of an actual operating facility and found them similar. Additionally, the facility floor space presented here is based upon actual plutonium processing systems and can be considered a nominal estimate.

DeMuth, S.

1997-09-30T23:59:59.000Z

110

Biological monitoring of arsenic exposure of gallium arsenide- and inorganic arsenic-exposed workers by determination of inorganic arsenic and its metabolites in urine and hair  

SciTech Connect (OSTI)

In an attempt to establish a method for biological monitoring of inorganic arsenic exposure, the chemical species of arsenic were measured in the urine and hair of gallium arsenide (GaAs) plant and copper smelter workers. Determination of urinary inorganic arsenic concentration proved sensitive enough to monitor the low-level inorganic arsenic exposure of the GaAs plant workers. The urinary inorganic arsenic concentration in the copper smelter workers was far higher than that of a control group and was associated with high urinary concentrations of the inorganic arsenic metabolites, methylarsonic acid (MAA) and dimethylarsinic acid (DMAA). The results established a method for exposure level-dependent biological monitoring of inorganic arsenic exposure. Low-level exposures could be monitored only by determining urinary inorganic arsenic concentration. High-level exposures clearly produced an increased urinary inorganic arsenic concentration, with an increased sum of urinary concentrations of inorganic arsenic and its metabolites (inorganic arsenic + MAA + DMAA). The determination of urinary arsenobetaine proved to determine specifically the seafood-derived arsenic, allowing this arsenic to be distinguished clearly from the arsenic from occupational exposure. Monitoring arsenic exposure by determining the arsenic in the hair appeared to be of value only when used for environmental monitoring of arsenic contamination rather than for biological monitoring.

Yamauchi, H.; Takahashi, K.; Mashiko, M.; Yamamura, Y. (St. Marianna Univ. School of Medicine, Kawasaki (Japan))

1989-11-01T23:59:59.000Z

111

Synthesis and Structure of Sr3GaN3 and Sr6GaN5:? Strontium Gallium Nitrides with Isolated Planar [GaN3]6- Anions  

Science Journals Connector (OSTI)

Synthesis and Structure of Sr3GaN3 and Sr6GaN5:? Strontium Gallium Nitrides with Isolated Planar [GaN3]6- Anions ... 9-19 In most cases, an alkaline earth metal is introduced into a Na melt to enhance the solubility of nitrogen, and is incorporated in the nitride product. ... The container was sealed by welding its open end in an argon atmosphere with active water-cooling so that NaN3 did not decompose due to heating during the welding. ...

Dong Gon Park; Zoltán A. Gál; Francis J. DiSalvo

2003-02-13T23:59:59.000Z

112

Photoluminescence properties and energy levels of RE (RE?=?Pr, Sm, Er, Tm) in layered-CaZnOS oxysulfide  

SciTech Connect (OSTI)

RE{sup 3+} (RE?=?Pr, Sm, Er, Tm)-activated CaZnOS samples were prepared by a solid-state reaction method at high temperature, and their photoluminescence properties were investigated. Doping with RE{sup 3+} (RE?=?Pr, Sm, Er, Tm) into layered-CaZnOS resulted in typical RE{sup 3+} (RE?=?Pr, Sm, Er, Tm) f-f line absorptions and emissions, as well as the charge transfer band of Sm{sup 3+} at about 3.3?eV. The energy level scheme containing the position of the 4f and 5d levels of all divalent and trivalent lanthanide ions with respect to the valence and conduction bands of CaZnOS has been constructed based on the new data presented in this work, together with the data from literature on Ce{sup 3+} and Eu{sup 2+} doping in CaZnOS. The detailed energy level scheme provides a platform for interpreting the optical spectra and could be used to comment on the valence stability of the lanthanide ions in CaZnOS.

Zhang, Zhi-Jun, E-mail: zhangzj@mail.sic.ac.cn [Key Laboratory of Transparent Opto-Functional Inorganic Materials of Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai 200050 (China); Feng, Ang; Chen, Xiang-Yang [Key Laboratory of Transparent Opto-Functional Inorganic Materials of Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100039 (China); Zhao, Jing-Tai, E-mail: jtzhao@mail.sic.ac.cn [Key Laboratory of Transparent Opto-Functional Inorganic Materials of Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai 200050 (China); School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China)

2013-12-07T23:59:59.000Z

113

Measurement of the solar neutrino capture rate with gallium metal. III: Results for the 2002--2007 data-taking period  

E-Print Network [OSTI]

The Russian-American experiment SAGE began to measure the solar neutrino capture rate with a target of gallium metal in Dec. 1989. Measurements have continued with only a few brief interruptions since that time. We give here the experimental improvements in SAGE since its last published data summary in Dec. 2001. Assuming the solar neutrino production rate was constant during the period of data collection, combined analysis of 168 extractions through Dec. 2007 gives a capture rate of solar neutrinos with energy more than 233 keV of 65.4 (+3.1)(-3.0) (stat) (+2.6)(-2.8) (syst) SNU. The weighted average of the results of all three Ga solar neutrino experiments, SAGE, Gallex, and GNO, is now 66.1 +/- 3.1 SNU, where statistical and systematic uncertainties have been combined in quadrature. During the recent period of data collection a new test of SAGE was made with a reactor-produced 37Ar neutrino source. The ratio of observed to calculated rates in this experiment, combined with the measured rates in the three prior 51Cr neutrino-source experiments with Ga, is 0.87 +/- 0.05. A probable explanation for this low result is that the cross section for neutrino capture by the two lowest-lying excited states in 71Ge has been overestimated. If we assume these cross sections are zero, then the standard solar model including neutrino oscillations predicts a total capture rate in Ga in the range of 63-66 SNU with an uncertainty of about 4%, in good agreement with experiment. We derive the current value of the neutrino flux produced in the Sun by the proton-proton fusion reaction to be (6.0 +/- 0.8) x 10^(10)/(cm^2 s), which agrees well with the pp flux predicted by the standard solar model. Finally, we show that the data are consistent with the assumption that the solar neutrino production rate is constant in time.

SAGE Collaboration; J. N. Abdurashitov; V. N. Gavrin; V. V. Gorbachev; P. P. Gurkina; T. V. Ibragimova; A. V. Kalikhov; N. G. Khairnasov; T. V. Knodel; I. N. Mirmov; A. A. Shikhin; E. P. Veretenkin; V. E. Yants; G. T. Zatsepin; T. J. Bowles; S. R. Elliott; W. A. Teasdale; J. S. Nico; B. T. Cleveland; J. F. Wilkerson

2009-01-15T23:59:59.000Z

114

Carrier localization in gallium nitride  

SciTech Connect (OSTI)

In wide bandgap GaN, a large number of interesting and important scientific questions remain to be answered. For example, the large free electron concentration reaching 10{sup 19} to 10{sup 20} cm{sup - 3} in nominally undoped material are ascribed to intrinsic defects because no chemical impurity has been found at such high concentrations. According to theoretical models, a nitrogen vacancy acts as a donor but its formation energy is very large in n-type materials, making this suggestion controversial. We have investigated the nature of this yet unidentified donor at large hydrostatic pressure. Results from infrared reflection and Raman scattering indicate strong evidence for localization of free carriers by large pressures. The carrier density is drastically decreased by two orders of magnitude between 20 and 30 GPa. Several techniques provide independent evidence for results in earlier reports and present the first quantitative analysis. A possible interpretation of this effect in terms of the resonant donor level is presented.

Wetzel, C. [Lawrence Berkeley National Lab., CA (United States)][California Univ., Berkeley, CA (United States); Walukiewicz, W. [Lawrence Berkeley National Lab., CA (United States); Haller, E.E. [Lawrence Berkeley National Lab., CA (United States)][California Univ., Berkeley, CA (United States)] [and others

1996-09-01T23:59:59.000Z

115

Superconductive silicon nanowires using gallium beam lithography.  

SciTech Connect (OSTI)

This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

Henry, Michael David; Jarecki, Robert Leo,

2014-01-01T23:59:59.000Z

116

Electronic properties of gallium nitride nanowires  

E-Print Network [OSTI]

This thesis presents a systematic study of the electrical transport in GaN nanowires. Particularly, the effect of the surrounding dielectric on the conductivity of GaN nanowires is experimentally shown for the first time. ...

Yoon, Joonah

2008-01-01T23:59:59.000Z

117

Interactions of gallium with zircaloy cladding  

E-Print Network [OSTI]

CHAPTER I INTRODUCTION The accepted options for the disposition of weapons-grade plutonium (WGPu) are immobilization or conversion to a mixed-oxide (MOX) reactor fuel. There are two benefits of conversion, one, the plutonium can't be converted back... into a viable weapon and two, the material could be used as an energy producing natural resource. Typical reactors use uranium dioxide enriched with about 3'le U-235. The proposed MOX fuel would consist of depleted uranium with WGPu. In order...

Mitchell, Lee Josey

2012-06-07T23:59:59.000Z

118

Spectroscopy of gallium selenide nanoparticle nuclei  

E-Print Network [OSTI]

by the presence of GaSe nanoparticle nuclei which are non-Superradiance in GaSe Nanoparticle Aggregates”, Journal ofStrongly-Coupled GaSe Nanoparticle Aggregates”, Journal of

Lair, Deborah L.

2011-01-01T23:59:59.000Z

119

Designing Asynchronous Circuits in Gallium Arsenide  

E-Print Network [OSTI]

3.2.2 Super Buffered Fet Logic : : : : : : : : : : : : : : : : : 18 4 A New Logic Family 21 4.1 Input Stage : : : : : : : : : : : : : : : : : : : : : : : : : : : : 21 4.1.1 Inverter : : : : : : : : : : : : : : : : : : : : : : : : 34 5.2.2 Output stage : : : : : : : : : : : : : : : : : : : : : : : 36 5.2.3 Delay model and power

Martin, Alain

120

Solvothermal synthesis and characterisation of new one-dimensional indium and gallium sulphides: [C{sub 1}N{sub 4}H{sub 26}]{sub 0.5}[InS{sub 2}] and [C{sub 1}N{sub 4}H{sub 26}]{sub 0.5}[GaS{sub 2}  

SciTech Connect (OSTI)

Two new main group metal sulphides, [C{sub 1}N{sub 4}H{sub 26}]{sub 0.5}[InS{sub 2}] (1) and [C{sub 1}N{sub 4}H{sub 26}]{sub 0.5}[GaS{sub 2}] (2) have been prepared solvothermally in the presence of 1,4-bis(3-aminopropyl)piperazine and their crystal structures determined by single-crystal X-ray diffraction. Both compounds are isostructural and crystallise in the monoclinic space group P2{sub 1}/n (Z=4), with a=6.5628(5), b=11.2008(9), c=12.6611(9) A and {beta}=94.410(4){sup o} (wR=0.035) for compound (1) and a=6.1094(5), b=11.2469(9), c=12.7064(10) A and {beta}=94.313(4){sup o} (wR=0.021) for compound (2). The structure of [C{sub 1}N{sub 4}H{sub 26}]{sub 0.5}[MS{sub 2}] (M=In,Ga) consists of one-dimensional [MS{sub 2}]{sup -} chains which run parallel to the crystallographic a axis and are separated by diprotonated amine molecules. These materials represent the first example of solvothermally prepared one-dimensional gallium and indium sulphides. -- Graphical abstract: [C{sub 1}N{sub 4}H{sub 26}]{sub 0.5}[InS{sub 2}] and [C{sub 1}N{sub 4}H{sub 26}]{sub 0.5}[GaS{sub 2}], prepared under solvothermal conditions, consist of one-dimensional [MS{sub 2}]{sup -} chains separated by diprotonated 1,4-bis(3-aminopropyl)piperazine molecules.

Vaqueiro, Paz [Department of Chemistry, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)]. E-mail: chepv@hw.ac.uk

2006-01-15T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode  

E-Print Network [OSTI]

metallization process ivas required because separate potentials must be apphed to the top and base ol' the defined mesas. A potent&al is apphed to the top of the mesas to inject carriers for tunneling through the douhle barrier heterostructures A. rectifying... was a demetal/degrease cleanup process which re- moved any contamination that may have been nn the wal'er. This process ivas followed by deposition of AuGe/Ni on the ivafer's backside which ivill provide an ohmic contact after annealing. The backside...

Kinard, William Brian

1989-01-01T23:59:59.000Z

122

Neutron irradiation effects on gallium nitride-based Schottky diodes  

SciTech Connect (OSTI)

Depth-resolved cathodoluminescence spectroscopy (DRCLS), time-resolved surface photovoltage spectroscopy, X-ray photoemission spectroscopy (XPS), and current-voltage measurements together show that fast versus thermal neutrons differ strongly in their electronic and morphological effects on metal-GaN Schottky diodes. Fast and thermal neutrons introduce GaN displacement damage and native point defects, while thermal neutrons also drive metallurgical reactions at metal/GaN interfaces. Defect densities exhibit a threshold neutron fluence below which thermal neutrons preferentially heal versus create new native point defects. Scanning XPS and DRCLS reveal strong fluence- and metal-dependent electronic and chemical changes near the free surface and metal interfaces that impact diode properties.

Lin, Chung-Han; Katz, Evan J.; Zhang, Zhichun [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States); Qiu, Jie; Cao, Lei [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)] [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Mishra, Umesh K. [Departments of Electrical and Computer Engineering and Materials Science and Engineering, University of California, Santa Barbara, California 93106 (United States)] [Departments of Electrical and Computer Engineering and Materials Science and Engineering, University of California, Santa Barbara, California 93106 (United States); Brillson, Leonard J. [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States) [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States); Department of Physics and Center for Materials Research, The Ohio State University, Columbus, Ohio 43210 (United States)

2013-10-14T23:59:59.000Z

123

Au-free Ohmic Contacts to Gallium Nitride and Graphene  

E-Print Network [OSTI]

. ................................................................................................. 43 Figure 28 Specific contact resistivity of co-sputtered Ti-Ta contact calculated after RTA at different temperatures ......................................................... 43 Figure 29 PMMA transfer method for transferring CVD grown...

Ravikirthi, Pradhyumna

2014-08-10T23:59:59.000Z

124

Production of gallium-66, positron emitting nuclide for radioimmumotherapy  

SciTech Connect (OSTI)

Excitation functions for production of {sup 66}Ga via {alpha}-induced nuclear reactions on enriched {sup 66}Zn have been measured with E{sub {alpha}}{le}27.3 MeV and E{sub {alpha}}{le}43.7 MeV employing the stack-thin target technique. In addition, the induced activity of {sup 67}Ga in the same sets of targets allowed an evaluation of the excitation functions of the corresponding nuclear reactions. 17 refs., 2 figs., 2 tabs.

Mirzadeh, S. (Oak Ridge National Lab., TN (USA)); Chu, Yung Yee (Brookhaven National Lab., Upton, NY (USA))

1991-01-01T23:59:59.000Z

125

Sandia National Laboratories: copper-indium-gallium-[di]selenide...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Regional Testing Center (PV RTC), Renewable Energy, Solar, Solar Newsletter, SunShot HelioVolt, Sandia National Laboratories, the National Renewable Energy Laboratory,...

126

High-Quality, Low-Cost Bulk Gallium Nitride Substrates  

Broader source: Energy.gov [DOE]

To develop ESG into a viable bulk growth process for GaN that is more scalable to large-area wafer manufacturing and able to produce cost-effective, high-quality bulk GaN substrates.

127

Superconductivity in gallium-substituted Ba8Si46 clathrates  

E-Print Network [OSTI]

superconductor, with an onset at T-C approximate to 3.3 K. For x=10 and higher, no superconductivity was observed down to T=1.8 K. This represents a strong suppression of superconductivity with increasing Ga content, compared to Ba8Si46 with T-C approximate to 8...

Li, Yang; Zhang, Ruihong; Liu, Yang; Chen, Ning; Luo, Z. P.; Ma, Xingqiao; Cao, Guohui; Feng, Z. S.; Hu, Chia-Ren; Ross, Joseph H., Jr.

2007-01-01T23:59:59.000Z

128

Rutherford backscattering analysis of gallium implanted 316 stainless steel  

E-Print Network [OSTI]

Experimental Procedure Sample Analysis 3 3 . 9 . 11 HI THEORY. . IH. 1 Backscattering Principles HI. 2 The RBS Spectrum IH. 3 The Surface Energy Approximation . . . HI. 4 Stainless Steel 316. . IV RESULTS AND DISCUSSION . . 13 . 13 15... for the disposition of weapons grade (WG) plutonium (Pu) in the United States: MOX fuel conversion and immobilization. The first option uses nuclear reactors to transmutate WG Pu and the second imbeds the WG Pu in glass logs for deep burial. Due to the large amount...

Ortensi, Javier

2012-06-07T23:59:59.000Z

129

Effect of Gallium Nitride Template Layer Strain on the Growth...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

5µm layer experienced tensile strain. Dynamic Secondary Ion Mass Spectrometry (SIMS) depth profiles show that the 15µm template layer device had an average indium...

130

Next Generation Photovoltaics Round 2 | Department of Energy  

Office of Environmental Management (EM)

(Zn,Mg)Cu oxysulfide solar absorber material with the potential to reach and exceed 20% energy conversion efficiency. The research team is substantially modifying the Cu2O base...

131

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1996. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar in research and development, specialty alloys, and other applications. Optoelectronic devices were used

132

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2006. One company in Utah  

E-Print Network [OSTI]

circuits. Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

133

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1998. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

134

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2000. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

135

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2003. One company in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, and solar cells, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

136

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2012. One company in Utah  

E-Print Network [OSTI]

consumed was used in integrated circuits (ICs). Optoelectronic devices, which include laser diodes, light. Optoelectronic devices were used in areas such as aerospace, consumer goods, industrial equipment, medical

137

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2008. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

138

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2001. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, and solar cells, specialty alloys, and other applications. Optoelectronic devices were used in areas such as consumer goods

139

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2005. One company in Utah  

E-Print Network [OSTI]

circuits. Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

140

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2007. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2009. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

142

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2010. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

143

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1999. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

144

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2011. One company in Utah  

E-Print Network [OSTI]

consumed was used in integrated circuits (ICs). Optoelectronic devices, which include laser diodes, light% was used in research and development, specialty alloys, and other applications. Optoelectronic devices were

145

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1997. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

146

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2004. One company in Utah  

E-Print Network [OSTI]

consumed was used in optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes% was used in research and development, specialty alloys, and other applications. Optoelectronic devices were

147

Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films  

E-Print Network [OSTI]

74 (19) 2821 (1999). F. H. Spedding, Rare-earth Elements, inby the use of rare- earth elements as color emitters inpowders activated with rare-earth elements Eu 3+ , Tb 3+ ,

Tao, Jonathan Huai-Tse

2010-01-01T23:59:59.000Z

148

Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films  

E-Print Network [OSTI]

residential lighting using incandescent lights [2], as shownenergy used for the incandescent lamp is wasted as infraredlight source to replace incandescent lighting [1]. Figure

Tao, Jonathan Huai-Tse

2010-01-01T23:59:59.000Z

149

Gallium Safety in the Laboratory INEEL/CON-03-00078  

Office of Scientific and Technical Information (OSTI)

This is a preprint of a paper intended for publication in a This is a preprint of a paper intended for publication in a journal or proceedings. Since changes may be made before publication, this preprint should not be cited or reproduced without permission of the author. This document was prepared as a account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, or any of their employees, makes any warranty, expressed or implied, or assumes any legal liability or responsibility for any third party's use, or the results of such use, of any information, apparatus, product or process disclosed in this report, or represents that its use by such third party would not infringe privately owned rights. The views expressed in this paper are

150

Dependence of carrier mobility on an electric field in gallium selenide crystals  

SciTech Connect (OSTI)

The dependence of the mobility of charge carriers on voltage has been studied in undoped GaSe single crystals and crystals doped with gadolinium; the latter crystals have exhibited various values of dark resistivity ({rho}{sub d.r} Almost-Equal-To 10{sup 4}-10{sup 8} {Omega} cm at 77 K) and of the doping level (N = 10{sup -5}, 10{sup -4}, 10{sup -3}, 10{sup -2}, and 10{sup -1} at %). It is established that the dependence of the charge-carrier mobility on the electric field applied to the sample E {<=} 10{sup 2} V/cm is observed in undoped high-resistivity GaSe crystals ({rho}{sub d.r} {>=} 10{sup 4} {Omega} cm) and in lightly doped GaSe crystals (N {<=} 10{sup -2} at %) in the region of T {<=} 150 K. It is found that this dependence is not related to heating of the charge carriers by an electric field; rather, it is caused by elimination of drift barriers as a result of injection.

Abdinov, A. Sh., E-mail: abdinov_axmed@yahoo.com; Babaeva, R. F., E-mail: Babaeva-Rena@yandex.ru; Rzayev, R. M. [Baku State University (Azerbaijan)

2012-06-15T23:59:59.000Z

151

Quantum wells on indium gallium arsenic compositionally graded buffers realized by molecular beam epitaxy  

E-Print Network [OSTI]

For a long time, there has been a desire to extend the emission wavelength of GaAs-based quantum well lasers, with the aim of eventually replacing InP with GaAs as the substrate of choice for communication applications. ...

Choy, Henry Kwong Hin, 1974-

2005-01-01T23:59:59.000Z

152

Structure and electronic properties of saturated and unsaturated gallium nitride nanotubes  

SciTech Connect (OSTI)

The atomic and electronic structures of saturated and unsaturated GaN nanotubes along the [001] direction with (100) lateral facets are studied using first-principles calculations. Atomic relaxation of nanotubes shows that appreciable distortion occurs in the unsaturated nanotubes. All the nanotubes considered, including saturated and unsaturated ones, exhibit semiconducting, with a direct band gap. Surface states arisen from the threefold-coordinated N and Ga atoms at the lateral facets exist inside the bulk-like band gap. When the nanotubes saturated with hydrogen, these dangling bond bands are removed from the band gap, but the band gap decreases with increasing the wall thickness of the nanotubes.

Wang, Zhiguo; Wang, Shengjie; Li, Jingbo; Gao, Fei; Weber, William J.

2009-11-05T23:59:59.000Z

153

Growth Kinetics and Doping of Gallium Nitride Grown by rf-Plasma Assisted Molecular Beam Epitaxy  

E-Print Network [OSTI]

Thomas H. Myers, Ph.D., Chair Larry E. Halliburton, Ph.D. Nancy C. Giles, Ph.D. Charter D. Stinespring Giles, Dr. Charter Stinespring, Dr. Larry Halliburton, and Dr. Mohindar Seehra. In addition, I would

Myers, Tom

154

Theoretical study of sequential oxidation of clusters of gallium oxide: Ga3On (n: 48)  

E-Print Network [OSTI]

as well as addition (and removal) of an electron leads to significant changes in the geometry oxide clusters, we found that the structural changes induced by addition and removal of an electron properties of neutral and ionized small GamOn (m,n = 1,2) clusters [2]. Addition of an electron introduced

Pandey, Ravi

155

The determination of titanium, germanium and gallium by charged particle activation analysis  

E-Print Network [OSTI]

V FWHM for the 1. 332 MeV y-ray of Co; Peak-to-Compton ratio: 20. 1; 60 Efficiency relative to a 3 x 3 inch NaI (Tl) detector for the 1. 332 MeV y-ray measured at 25 cm distance: 3 05%%d Data Ac uisition and Processin Data was acquired via a 4096... of the reaction had to be sufficiently high to make measurements of ppm level concentrations feasible. The thick target yields were calculated by correlating the activities of the particular Y-rays 16 back to the time at the end of the irradiation...

Novak, Leo Robert

1975-01-01T23:59:59.000Z

156

Luminescent Properties of CdS Crystals Doped with Gallium and Tellurium in Cadmium Vapor  

Science Journals Connector (OSTI)

A technique is devised for vapor-phase doping CdS in the quaternary system Cd–Ga–Te–S. CdS crystals are doped with Ga and Te via four-zone ... and Cd (the more volatile component of CdS). The luminescence spectra...

I. N. Odin; M. V. Chukichev; M. E. Rubina

2003-07-01T23:59:59.000Z

157

Identification of the gallium vacancy-oxygen pair defect in GaN  

SciTech Connect (OSTI)

Cation vacancies like V{sub Ga}, V{sub Al} and their complexes with oxygen are predicted to be abundant in III-nitrides and to play an important role in nonradiative recombination. Appearing in triple or double negatively charged states, they are not paramagnetic and have not so far been detected by magnetic resonance even under illumination. In this Brief Report, we demonstrate an efficient way to make cation vacancy defects in GaN detectable by electron paramagnetic resonance and present our identification of the V{sub Ga}O{sub N} pair in GaN which is the model material for the III-nitrides and their alloys.

Son, N. T.; Hemmingsson, C. G.; Janzen, E. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Paskova, T.; Evans, K. R. [Kyma Technologies Inc., 8829 Midway West Road, Raleigh, North Carolina 27617 (United States); Usui, A. [R and D Division, Furukawa Co., Ltd., Tsukuba, Ibaraki 305-0856 (Japan); Morishita, N.; Ohshima, T. [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Isoya, J. [Graduate School of Library, Information and Media Studies, University of Tsukuba, Tsukuba, Ibaraki 305-8550 (Japan); Monemar, B. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Nanometer Structure Consortium, Lund University, P.O. Box 118, S-221 00 Lund (Sweden)

2009-10-15T23:59:59.000Z

158

4.2.3.4 Magnetic neutron scattering in terbium, holmium and dysprosium gallium garnets  

Science Journals Connector (OSTI)

This document is part of Subvolume E ‘Garnets’ of Volume 27 ‘Magnetic Properties of Non-Metallic Inorganic Compounds Based on Transition Elements’ of Landolt-Börnstein - Group III Condensed Matter.

Z. A. Kazei; N. P. Kolmakova; V. I. Sokolov

1991-01-01T23:59:59.000Z

159

Non-Destructive Spent Fuel Characterization with Semi-Conducting Gallium Arsinde Neutron Imaging Arrays  

SciTech Connect (OSTI)

High resistivity bulk grown GaAs has been used to produce thermal neutron imaging devices for use in neutron radiography and characterizing burnup in spent fuel. The basic scheme utilizes a portable Sb/Be source for monoenergetic (24 keV) neutron radiation source coupled to an Fe filter with a radiation hard B-coated pixellated GaAs detector array as the primary neutron detector. The coated neutron detectors have been tested for efficiency and radiation hardness in order to determine their fitness for the harsh environments imposed by spent fuel. Theoretical and experimental results are presented, showing detector radiation hardness, expected detection efficiency and the spatial resolution from such a scheme. A variety of advanced neutron detector designs have been explored, with experimental results achieving 13% thermal neutron detection efficiency while projecting the possibility of over 30% thermal neutron detection efficiency.

Douglas S. McGregor; Holly K. Gersch; Jeffrey D. Sanders; John C. Lee; Mark D. Hammig; Michael R. Hartman; Yong Hong Yang; Raymond T. Klann; Brian Van Der Elzen; John T. Lindsay; Philip A. Simpson

2002-01-30T23:59:59.000Z

160

Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting  

Science Journals Connector (OSTI)

...lighting research and development: Multi-year program plan) ( US DoE , Washington, DC ) Available from http://www1.eere.energy.gov/buildings/ssl/techroadmaps.html . 6 Karlicek RF Jr ( 2005 ) Conference on Lasers and Electro-optics...

Hoon-sik Kim; Eric Brueckner; Jizhou Song; Yuhang Li; Seok Kim; Chaofeng Lu; Joshua Sulkin; Kent Choquette; Yonggang Huang; Ralph G. Nuzzo; John A. Rogers

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Liquid-Phase Gallium–Indium Alloy Electronics with Microcontact Printing  

Science Journals Connector (OSTI)

The microcontact printer is composed of a print head mounted to a three-axis Cartesian robot. ... (9) Potential applications include soft and stretchable electronics for wearable technologies that monitor human motion(18-20) and electronic skin for biologically inspired soft robots. ... A paint brush is used to ink the stamps with a coat of liquid-phase GaIn alloy. ...

Arya Tabatabai; Andrew Fassler; Claire Usiak; Carmel Majidi

2013-04-30T23:59:59.000Z

162

Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting  

Science Journals Connector (OSTI)

...of Materials Science and Engineering...Mechanical and Aerospace Engineering...energy. Further advances in this technology...that extend our recent work in flexible electronics...of Materials Sciences under Award...funded by National Science Foundation...energy. Further advances in this technology...

Hoon-sik Kim; Eric Brueckner; Jizhou Song; Yuhang Li; Seok Kim; Chaofeng Lu; Joshua Sulkin; Kent Choquette; Yonggang Huang; Ralph G. Nuzzo; John A. Rogers

2011-01-01T23:59:59.000Z

163

Radiation-Hardened Gallium Nitride Detector and Arrays for Fusion Diagnostics  

SciTech Connect (OSTI)

This poster reports testing to confirm that GaN devices exhibit the extreme radiation hardness needed for use at the NIF, functioning properly after 1x10{sup 12} protons/cm{sup 2} proton irradiation in one year.

Sun, K. X., and MacNeil, L.

2011-09-08T23:59:59.000Z

164

SAGE: Solar Neutrino Data from SAGE, the Russian-American Gallium Solar Neutrino Experiment  

DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

SAGE is a solar neutrino experiment based on the reaction 71Ga + n goes to 71Ge + e-. The 71Ge atoms are chemically extracted from a 50-metric ton target of Ga metal and concentrated in a sample of germane gas mixed with xenon. The atoms are then individually counted by observing their decay back to 71Ga in a small proportional counter. The distinguishing feature of the experiment is its ability to detect the low-energy neutrinos from proton-proton fusion. These neutrinos, which are made in the primary reaction that provides the Sun's energy, are the major component of the solar neutrino flux and have not been observed in any other way. To shield the experiment from cosmic rays, it is located deep underground in a specially built facility at the Baksan Neutrino Observatory in the northern Caucasus mountains of Russia. Nearly 100 measurements of the solar neutrino flux have been made during 1990-2000, and their combined result is a neutrino capture rate that is well below the prediction of the Standard Solar Model. The significant suppression of the solar neutrino flux that SAGE and other solar neutrino experiments have observed gives a strong indication for the existence of neutrino oscillations. [copied from the SAGE homepage at http://ewi.npl.washington.edu/SAGE/SAGE.html

SAGE Collaboration

165

E-Print Network 3.0 - arsenide gallium nitride Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

An advanced diffusion model to identify emergent research issues: the case of optoelectronic devices Summary: instrumentation Absorption coefficients Aluminium Nitrides Aluminium...

166

E-Print Network 3.0 - aluminium gallium indium Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

An advanced diffusion model to identify emergent research issues: the case of optoelectronic devices Summary: Aluminium arsenides Ge-Si alloys Avalanche photodiodes Indium...

167

Identification of a physical metallurgy surrogate for the plutonium—1 wt.?% gallium alloy  

Science Journals Connector (OSTI)

Future plutonium research is expected to be limited due to the downsizing of the nuclear weapons complex and an industry focus on environmental remediation and decommissioning of former manufacturing and research facilities. However the need to further the understanding of the behavior of plutonium has not diminished. Disposition of high level residues long-term storage of wastes and certification of the nuclear stockpile through the Stockpile Stewardship Program are examples of the complex issues that must be addressed. Limited experimental facilities and the increasing cost of conducting plutonium research provide a strong argument for the development of surrogate materials. The purpose of this work was to identify a plutonium surrogate based on fundamental principles such as electronic structure and then to experimentally demonstrate its viability.

Frank E. Gibbs; David L. Olson; William Hutchinson

2000-01-01T23:59:59.000Z

168

Accelerated Testing of HT-9 with Zirconia Coatings Containing Gallium using Raman Spectroscopy and XPS  

SciTech Connect (OSTI)

Laser Raman spectroscopy and x-ray photoelectron spectroscopy were used to study the evolution of composition of oxide films in the presence of zirconia coatings on miniature HT-9 alloy specimens subjected to elevated temperature in air. The experiments expanded on previous efforts to develop a quick-screening technique for candidate alloys for cladding materials (HT-9) and actinide-based mixed oxide fuel mixtures (represented by the zirconia coating) by investigating the effect of both coating composition and alloy pretreatment conditions on the high temperature reactions. In particular, the presence of the element Ga (a potential impurity in mixed oxide fuel) in the initial zirconia coating was found to accelerate the rate of oxide growth relative to that of yttria-stabilized zirconia studied previously. In addition, HT-9 samples that were subjected to different thermal pretreatments gave different results. The results suggest that the presence of Ga in a mixed oxide fuel will enhance the corrosion of HT-9 cladding under the conditions of this study, although the extent of enhancement is influenced by thermal pretreatment of the cladding material. The results also demonstrate the need to combine Raman spectroscopy with other techniques, particularly photoelectron spectroscopy, for optimizing composition and/or fabrication conditions of both cladding and oxide fuels for advanced nuclear reactors.

Windisch, Charles F.; Henager, Charles H.; Engelhard, Mark H.; Bennett, Wendy D.

2009-12-01T23:59:59.000Z

169

Fabrication of an optically driven 10 GHz ring resonator on a gallium arsenide substrate  

E-Print Network [OSTI]

/D converters, optical detectors, dc to rf converters, and millimeter-wave or microwave generators. Photoconductors can be easily integrated with microelectronic devices as well as microwave circuits. Recently, an optically excited photoconductive switch... is the barrier height and y, is the electron affinity for the semiconductor. Current flow at a metal-semiconductor barrier is due mainly to majority carriers. The four major current transport methods are thermionic emission over the barrier, quantum...

McGregor, Douglas Scott

1989-01-01T23:59:59.000Z

170

Gallium-68 Bioorthogonal Tetrazine Polymers for the Multistep Labeling of Cancer Biomarkers /  

E-Print Network [OSTI]

M, Fox JM (2008) Tetrazine ligation: fast bioconjugationR, Hilderbrand SA (2008) Tetrazine-Based Cycloadditions:of Cancer Cells through a Tetrazine/trans- Cyclooctene

Nichols, Brandon Edward

2013-01-01T23:59:59.000Z

171

Thermodynamic properties of gallium hydroxide oxide (alpha -GaOOH) at temperatures to 700 K  

Science Journals Connector (OSTI)

...periodically removed from the reactor at the experimental temperature...titanium filter inserted in the reactor cover. Each sample was divided...and V. Pokrovskii greatly improved the presentation and clarity...doctorat, Universit Paul-Sabatier de Toulouse, 166 p. Diakonov...

Gleb S. Pokrovski; Igor I. Diakonov; Pascale Benezeth; Vyacheslav M. Gurevich; Konstantin S. Gavrichev; Vadim E. Gorbunov; Jean-Louis Dandurand; Jacques Schott; Igor L. Khodakovsky

172

Professor Mathias Schubert explains his study of indium gallium nitride semiconductor systems, which  

E-Print Network [OSTI]

generation of multiple-junction solar energy conversion devices with improved ease of manufacture, cost within a sample. Conversely, the blue light-emitting diodes (LEDs) intended for transferring from energy free charge carrier properties in contact- based electrical measurements, in the extreme case

Farritor, Shane

173

Process development for the fabrication of monolithic optoelectronic resonators on gallium arsenide substrates  

E-Print Network [OSTI]

of greater solubility wash away. The wafers were immersed in a diluted MF312 developer snd slightly agitated. When development was completed, the wafers were rinsed with deionized (DI) water and blown dry. Hard baking in a low pressure chamber removes any... of greater solubility wash away. The wafers were immersed in a diluted MF312 developer snd slightly agitated. When development was completed, the wafers were rinsed with deionized (DI) water and blown dry. Hard baking in a low pressure chamber removes any...

Fairchild, Brock Wilson

2012-06-07T23:59:59.000Z

174

Testing the Reactor and Gallium Anomalies with Intense (Anti)Neutrino Emitters  

E-Print Network [OSTI]

Several observed anomalies in neutrino oscillation data could be explained by a hypothetical fourth neutrino separated from the three standard neutrinos by a squared mass difference of a few 0.1 eV$^2$ or more. This hypothesis can be tested with MCi neutrino electron capture sources ($^{51}$Cr) or kCi antineutrino $\\beta$-source ($^{144}$Ce) deployed inside or next to a large low background neutrino detector. In particular, the compact size of this source coupled with the localization of the interaction vertex lead to an oscillating pattern in event spatial (and possibly energy) distributions that would unambiguously determine neutrino mass differences and mixing angles.

Th. Lasserre

2012-09-23T23:59:59.000Z

175

Heat treatment of bulk gallium arsenide using a phosphosilicate glass cap  

SciTech Connect (OSTI)

n-type bulk GaAs crystals, capped with chemically vapor-deposited phosphosilicate glass, were heat treated at temperatures in the range of 600 to 950 /sup 0/C. Measurements on Schottky diodes and solar cells fabricated on the heat-treated material, after removal of a damaged surface layer, show an increase in free-carrier concentration, in minority-carrier-diffusion length, and in solar-cell short-circuit current. The observed changes are attributed to a removal of lifetime-reducing acceptorlike impurities, defects, or their complexes.

Mathur, G.; Wheaton, M.L.; Borrego, J.M.; Ghandhi, S.K.

1985-05-15T23:59:59.000Z

176

Hydrogen passivation of EL2 defects and H2*-like complex formation in gallium arsenide  

Science Journals Connector (OSTI)

A complex formed by one As antisite (AsGa), one As, and two H atoms is proposed, in GaAs, which is reminiscent of the H2* defect in crystalline Si and properly accounts for the hydrogen neutralization of the EL2 deep donor activity. It is noticeably stable, in agreement with experimental results. The geometry and electronic structure of this complex present interesting connections with those of the isolated As antisite which clarify the EL2 passivation mechanism.

A. Amore Bonapasta

1995-02-15T23:59:59.000Z

177

Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures  

Science Journals Connector (OSTI)

Strong plasmon resonances have been observed in the terahertz transmission spectra (1–5 THz) of large-area slit-grating-gate AlGaN/GaN-based high-electron-mobility transistor(HEMT) structures at temperatures from 10 to 170 K. The resonance frequencies correspond to the excitation of plasmons with wave vectors equal to the reciprocal lattice vectors of the metal grating which serves both as a gate electrode for the HEMT and a coupler between plasmons and incident terahertz radiation. Wide tunability of the resonances by the applied gate voltage demonstrates potential of these devices for terahertz applications.

A. V. Muravjov; D. B. Veksler; V. V. Popov; O. V. Polischuk; N. Pala; X. Hu; R. Gaska; H. Saxena; R. E. Peale; M. S. Shur

2010-01-01T23:59:59.000Z

178

Picosecond response of gallium-nitride metal–semiconductor–metal photodetectors  

Science Journals Connector (OSTI)

Metal–semiconductor–metal ultraviolet photodiodes fabricated on GaN were tested in the picosecond regime with an electro-optic sampling system. A device with a feature size of 1 ?m showed a response with 1.4 ps rise time and 3.5 ps full width at half maximum. The derived electron velocity 1.43×10 7 ? cm/s is in good agreement with independent photoexcitation measurements. A slower impulse response was observed in a device with smaller feature size of 0.5?? m .

Jianliang Li; Ying Xu; T. Y. Hsiang; W. R. Donaldson

2004-01-01T23:59:59.000Z

179

Control of the emission wavelength of gallium nitride-based nanowire light-emitting diodes.  

E-Print Network [OSTI]

??Halbleiter-Nanosäulen (auch -Nanodrähte) werden als Baustein für Leuchtdioden (LEDs) untersucht. Herkömmliche LEDs aus Galliumnitrid (GaN) bestehen aus mehreren Kristallschichten auf einkristallinen Substraten. Ihr Leistungsvermögen wird… (more)

Wölz, Martin

2013-01-01T23:59:59.000Z

180

The Hall mobility measurement of Liquid Phase Epitaxy grown aluminum gallium arsenide  

E-Print Network [OSTI]

allows lasing action at or above room temperature. The utility of AI?Ga& ?As is based on the close latti&e match to GaAs over a range of Al mole fraction between zero and one(Fig. 1)IS). This is significant since heterojunctions between s...-type by occupying the site normally orc?pi& d by th& gro?p V element, ar?l acting as a donor. For the p-type of AI?Ga& ?As. %1g was used as an i&np?ri&y. Fig. 10 and Fig. 11 show I he r&'lal ionship bet wc?n th& in&p?r&I& & o???& r?t ?&n??&l t he alorr&i& weight...

Choi, Young-Shig

2012-06-07T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Gallium arsenide thermal conductivity and optical phonon relaxation times from first-principles calculations  

E-Print Network [OSTI]

In this paper, thermal conductivity of crystalline GaAs is calculated using first-principles lattice dynamics. The harmonic and cubic force constants are obtained by fitting them to the force-displacement data from density ...

Luo, Tengfei

182

E-Print Network 3.0 - analysis gallium-67 lung Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ILD... , interstitial lung disease, texture analysis, co-occurrence matrix, computed tomography I. INTRODUCTION Computer... %. The aim of our work is to develop a novel texture ......

183

Gallium solar neutrino experiments: Absorption cross sections, neutrino spectra, and predicted event rates  

E-Print Network [OSTI]

solar neutrino sources with standard energy spectra, and for laboratory sources of 51 Cr and 37 Ar; the calculations include, where appropriate, the thermal energy of fusing solar ions and use improved nuclear the energy spectrum of solar neutrinos. Theoretical uncertainties are estimated for cross sections

Bahcall, John

184

Diffusion of small solutes in polymer-containing solutions  

Science Journals Connector (OSTI)

...Arsinogallane and Chemical Conversion to Gallium Arsenide ERIN K. BYRNE, LASZLO PARKANYI...yield the rn-V semiconductor gallium arsenide as a finely divided amorphous...the reaction small dusters of gallium arsenide were apparently present in solution...

KL Yam; DK Anderson; RE Buxbaum

1988-07-15T23:59:59.000Z

185

Accelerated Testing of HT-9 with Zirconia Coatings Containing...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Testing of HT-9 with Zirconia Coatings Containing Gallium using Raman Spectroscopy and XPS. Accelerated Testing of HT-9 with Zirconia Coatings Containing Gallium using Raman...

186

Monday, December 13, 1999 Physics Today On The Web -Physics Update Page: 1 http://www.aip.org/pt/nov99/physup1199.htm  

E-Print Network [OSTI]

, but with ratios of boron-10 to boron-11 and of gallium-69 to gallium-71 that exceeded the natural abundances

Pierrehumbert, Raymond

187

E-Print Network 3.0 - arsenide-based ternary compounds Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

gallium arsenide-based... separately claimed breakthroughs in solar cell production. Gallium arsenide (GaAs) and related compounds... of manufacturing compound semiconductors...

188

Structure, Morphology, and Optical Properties of Amorphous and...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films. Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium...

189

Novel methods of hydrogen production: aluminum-gallium-indium-tin systems and copper boron oxide as photocatalysts.  

E-Print Network [OSTI]

??In recent years, hydrogen production and storage has attracted a lot of attention in both academia and industry due to its variety of applications in… (more)

Lang, Yizhao

2011-01-01T23:59:59.000Z

190

Physics based analytical modelling of Gallium Nitride(GaN) MESFET considering different ion implantation energy with high temperature annealing.  

E-Print Network [OSTI]

??A physics based analytical model of ion implanted GaN MESFET has been presented considering high temperature annealing effects. Choosing appropriate activation energy of impurity atoms,… (more)

Raghavan, Vinay

2015-01-01T23:59:59.000Z

191

The radiation bio-effects of gallum-72 on leukemic cells via a gallium-transferrin complex  

E-Print Network [OSTI]

of the beta is about 30'/o to 40'/o of the maximum energy. An anti-neutrino is emitted simultaneously, carrying the remainder of the energy. Values listed for beta energies are the maximum values unless otherwise stated (Cember 1996). Prominent beta...

Forbes, Christen Douglas

2012-06-07T23:59:59.000Z

192

The design, construction, and testing of a nuclear fuel rod thermal simulation system to study gallium/Zircaloy interactions  

E-Print Network [OSTI]

friends for their unending support and patience during this project. Thank you so much! NOMENCLATURE Abbreviations and Acronyms WGPu- weapons grade plutonium DOE- Department of Energy MOX- mixed oxide fuel WG MOX- weapons grade MOX fuel LWR- light... to be employed were immobilization and fissioning the WGPu as mixed oxide (MOX) fuel in commercial power reactors. Both approaches have many advantages and disadvantages and are currently being studied by scientists and engineers all over the world. The use...

Allison, Christopher Curtis

2012-06-07T23:59:59.000Z

193

Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride  

SciTech Connect (OSTI)

Al{sub 2}O{sub 3} films, HfO{sub 2} films, and HfO{sub 2}/Al{sub 2}O{sub 3} stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H{sub 2}/N{sub 2} plasma at 650 Degree-Sign C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 Degree-Sign C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 Degree-Sign C. The valence band and conduction band offsets (VBOs and CBOs) of the Al{sub 2}O{sub 3}/GaN and HfO{sub 2}/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations based on the electron affinity model and charge neutrality level model. Moreover, subsequent annealing had little effect on these offsets; however, the GaN band bending did change depending on the annealing and processing. An Al{sub 2}O{sub 3} layer was investigated as an interfacial passivation layer (IPL), which, as results suggest, may lead to improved stability, performance, and reliability of HfO{sub 2}/IPL/GaN structures. The VBOs were {approx}0.1 and 1.3 eV, while the deduced CBOs were 0.6 and 1.1 eV for HfO{sub 2} with respect to Al{sub 2}O{sub 3} and GaN, respectively.

Yang Jialing; Eller, Brianna S.; Zhu Chiyu; England, Chris; Nemanich, Robert J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

2012-09-01T23:59:59.000Z

194

Journal of Engineering Physics and Thermophysics, VoL 71, No..5, 1998 SIMULATION OF A GALLIUM ARSENIDE RUNNING  

E-Print Network [OSTI]

and investigating HHT devices containing active elements with distributed parameters. Nowadays an active search structure of one or another configuration and a cathode section in the form of a Schottky barrier whose of Materials of Electronic Technology, Warsaw; Institute of Physics and Technology, National Academy

Harilal, S. S.

195

Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films  

DOE Patents [OSTI]

Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

2014-11-04T23:59:59.000Z

196

Organometallic vapor-phase homoepitaxy of gallium arsenide assisted by a downstream hydrogen afterglow plasma in the growth region  

E-Print Network [OSTI]

of the trimeth- ylgallium (TMGa) for homoepitaxial GaAs. They found in direct comparison of the pure thermal-insulating) substrate is loaded into the depo- sition reactor of Fig. 1 without any chemical degreasing or polishing

Collins, George J.

197

Silicon-germanium/gallium phosphide material in high power density thermoelectric modules. Final report, February 1980--September 1981  

SciTech Connect (OSTI)

This is the final report of work on the characterization of an improved Si-Ge alloy and the fabrication of thermoelectric devices. The improved Si-Ge alloy uses a small addition of GaP in n- and p- type 80 at.% Si-20 at.% Ge; this addition reduces the thermal conductivity, thereby increasing its figure of merit and conversion efficiency. The thermoelectric devices fabricated include multicouples intended for use in Radioisotope Thermoelectric Generators (RTGs) and ring-type modules intended for use with nuclear reactor heat sources. This report summarizes the effort in the material as well as the device areas and discusses individual phases of each area. Results should form basis for further effort.

Not Available

1981-12-31T23:59:59.000Z

198

A study of the interaction of gallium arsenide with wet chemical formulations using thermodynamic calculations and spectroscopic ellipsometry  

Science Journals Connector (OSTI)

This paper investigates the effectiveness of different wet chemical treatments and their ability to produce/regrow a thin, stable surface oxide layer on GaAs. Results from thermodynamic considerations indicate that a stable surface oxide layer, free of excess arsenic and arsenic oxides, can be achieved by properly choosing aqueous solutions targeted within the GaAs solubility range (pH  11) followed by deionized (DI) water rinsing. This is further corroborated by spectroscopic ellipsometric data that can qualitatively, but correctly, identify the thickness of the surface oxide layer after different wet chemical treatments. Specifically, samples treated with acidic solutions based on HCl, HF, and H3PO4 and diluted ammonium hydroxide solution produce a more stable surface layer that is thinner than the native oxide layer on GaAs. The results and subsequent discussion are presented in the context of an attempt at achieving a well passivated GaAs surface, free of excessive surface state defects responsible for Fermi-level pinning.

J. Price; J. Barnett; S. Raghavan; M. Keswani; R. Govindarajan

2010-01-01T23:59:59.000Z

199

Calpain-Mediated Integrin Deregulation as a Novel Mode of Action for the Anticancer Gallium Compound KP46  

Science Journals Connector (OSTI)

...processes, including the regulation of mRNA stability and translation, cellular proliferation...population as shown in Fig. 1A. A bubble plot can be used to depict both the abundance...in different cell populations. A, a bubble plot depicting the relative abundance...

Ute Jungwirth; Johannes Gojo; Theresa Tuder; Gernot Walko; Martin Holcmann; Thomas Schöfl; Karin Nowikovsky; Nastasia Wilfinger; Sushilla Schoonhoven; Christian R. Kowol; Rosa Lemmens-Gruber; Petra Heffeter; Bernhard K. Keppler; and Walter Berger

2014-10-01T23:59:59.000Z

200

Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing  

Science Journals Connector (OSTI)

Comprehensive studies of the electrical properties of Mg-doped bulk GaN crystals grown by high-pressure synthesis were performed as a function of temperature up to 750?°C. Annealing of the samples in nitrogen ambient modifies qualitatively their resistivity values ? and the ?(T) variation. It was found that our material is characterized by a high concentration of oxygen-related donors and that the charge transport in the studied samples is determined by two types of states one of shallow character (Mg-related state E A ?0.15? eV ) and the second one much more deep E 2 ?0.95? eV (above the valence band). Depending on the effective concentration of either states different resistivities ? can be observed: lower resistivity (?10 6 ??? cm at ambient temperature) in samples with dominant E 2 states. For the first type of samples annealing at T ann <500?° C leads to a decrease of their resistivity and is associated with an increase of the effective concentration of the shallow Mg acceptors. Annealing of both types of samples at temperatures between 600 and 750?°C leads to an increase of the deep state concentration. The presence of hydrogen ambient during annealing of the low-resistivity samples strongly influences their properties. The increase of the sample resistivity and an appearance of a local vibrational mode of hydrogen at 3125 cm?1 were observed. These effects can be removed by annealing in hydrogen-free ambient.

E. Litwin-Staszewska; T. Suski; R. Piotrzkowski; I. Grzegory; M. Bockowski; J. L. Robert; L. Ko?czewicz; D. Wasik; E. Kami?ska; D. Cote; B. Clerjaud

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

An experimental study of the solubility of Gallium(III) oxide in HCl-bearing water vapour  

E-Print Network [OSTI]

at 200 °C at a pH of $4. The values are very similar to those estimated from data for geothermal wells

Devernal, Anne

202

GALLIUM NITRIDE INTEGRATED GAS/TEMPERATURE SENSORS FOR FUEL CELL SYSTEM MONITORING FOR HYDROGEN AND CARBON MONOXIDE  

E-Print Network [OSTI]

on field effect devices using catalytic metal gates on silicon carbide substrates has been reviewed (Spetz-10%) of transition metals such as copper, silver, and chromium (Feinstein et al 1997 and Pyke 1993). High temperature. Introduction Gas sensing and analysis based on gas adsorption on a catalytic metal surface has been extensively

203

GREEN:  

Science Journals Connector (OSTI)

......toxicity, poor solubility in solvents...germanium, and gallium arsenide, as well...Gallium arsenide is a compound...elements gallium and arsenic...gallons of water every day...release indium gallium arsenide, filling...byproduct is water. Ann Christy......

Green Impact of Hardware

2011-05-01T23:59:59.000Z

204

On the Mass Eigenstate Composition of the 8B Neutrinos from the Sun  

E-Print Network [OSTI]

The present data of gallium experiments provide indirectly the only experimental limit on the fraction of $\

A. Kopylov; V. Petukhov

2006-08-14T23:59:59.000Z

205

Characterization of the Binding of Gallium, Platinum, and Uranium to Pseudomonas fluorescens by Small-Angle X-Ray Scattering and Transmission Electron Microscopy  

Science Journals Connector (OSTI)

...that combined small-angle neutron scattering and small-angle X-ray scattering...by small-angle X-ray and neutron scattering. Plenum Press, New York...of biological structures by neutron scattering from solution. Rep. Prog...

Susan Krueger; Gregory J. Olson; David Johnsonbaugh; T. J. Beveridge

1993-12-01T23:59:59.000Z

206

Exploration of Novel Reaction Pathway for Formation of Copper Indium Gallium Diselenide: Cooperative Research and Development Final Report, CRADA Number CRD-03-121  

SciTech Connect (OSTI)

The investigation will explore a potentially low-cost method of forming CIGS for use in solar cells. Investigators from HelioVolt will work in NREL laboratories to modify and apply our tools in fabrication of the CIGS layer. Investigators from NREL will assist in preparing substrates and in compleing solar cells composed of these CIGS layers to evaluate the effectiveness of the HelioVolt processes.

van Hest, M.

2014-11-01T23:59:59.000Z

207

Sandia National Laboratories: Energy Efficiency  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Single-mode gallium nitride nanowire lasers On January 28, 2013, in EC, Energy Efficiency, Solid-State Lighting A new top-down method for fabricating gallium nitride...

208

IIl-nitride nanowires and heterostructures : growth and optical properties on nanoscale  

E-Print Network [OSTI]

Gallium nitride (GaN) and indium gallium nitride (InGaN) nanowires promise potential for further improving the electricity-to-light energy conversion efficiencies in light emitting diodes due to strain relaxation, reduced ...

Zhou, Xiang, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

209

E-Print Network 3.0 - aluminum oxide selectively Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

between GaN and AlGaN has been observed up to an aluminum mole fraction... oxides.1-3 For gallium nitride and aluminum gallium nitride this effect has been seldom reported.4... ,...

210

Processing Techniques for the 93 K Superconductor Ba2YCu3O7  

Science Journals Connector (OSTI)

...of either silicon or gallium arsenide field effect transistor...BaF2 also require some water to hydrolyze ith fluoride...than the normal solid solubilities. In addition, the...particularly in 930 gallium arsenide (GaAs) circuits...

D. W. MURPHY; D. W. JOHNSON JR.; S. JIN; R. E. HOWARD

1988-08-19T23:59:59.000Z

211

Sandia National Laboratories: BES Web Highlight: Single-mode...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ClimateECEnergyEnergy EfficiencyBES Web Highlight: Single-mode gallium nitride nanowire lasers BES Web Highlight: Single-mode gallium nitride nanowire lasers "Solid-state Lighting:...

212

This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research  

E-Print Network [OSTI]

to solar abundances) in certain chemically peculiar (CP) stars and old galactic halo stars [1]. Gallium (Ga

Rehse, Steven J.

213

2009 Minerals Yearbook U.S. Department of the Interior  

E-Print Network [OSTI]

As and gallium nitride (GaN) and was used in integrated circuits (ICs) and optoelectronic devices [laser diodes

214

2011 Minerals Yearbook U.S. Department of the Interior  

E-Print Network [OSTI]

Cs) and optoelectronic devices [laser diodes, light-emitting diodes (lEDs), photodetectors, and solar cells]. Gallium

215

Determination of the retention function of [superscript 67]Ga in canine  

E-Print Network [OSTI]

()))()] Fecal excretion was the primary route of elimination of gallium, accounting for 63K of the gallium excreted, during the 12 days of observation, Due to the wide variation in gallium retention exhibited by the individual dogs, it is recommended... ABSTRACT . . . ~ ACKNOWLEDGEMENTS TABLE OF CONTENTS LIST OF TABLES LIST OF FIGURES INTRODUCTION LITERATURE REVIEW vi vii viii 3 History Gallium Kinetics Physical Properties of 67Ga METHODS AND MATERIAL 3 4 18 21 Research Subjects...

Schoenbucher, Bruce

2012-06-07T23:59:59.000Z

216
217

Transistor-Based Miniature Microwave-Drill Applicator Yehuda Meir and Eli Jerby*  

E-Print Network [OSTI]

. Recent developments of gallium-nitride (GaN) and silicon- carbide (SiC) transistors have increased

Jerby, Eli

218

314 IEEE MICROWAVE AND GUIDED WAVE LETTERS, VOL. 9, NO. 8, AUGUST 1999 39-GHz GaN-Based Microwave Power  

E-Print Network [OSTI]

As-based counterparts of the same sizes. Index Terms--Amplifier, field-effect transistors, gallium-nitride (Ga

York, Robert A.

219

THERMAL STUDY OF A GaN-BASED HEMT A Dissertation  

E-Print Network [OSTI]

of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) under bias conditions. An experimental

Sen, Mihir

220

Die Elemente der 13. Gruppe: die Borgruppe  

Science Journals Connector (OSTI)

Die 13. Gruppe enthält die Elemente: Bor (B), Aluminium (Al), Gallium (Ga), Indium (In) und Thallium (Tl).

Prof. Dr. Waldemar Ternes

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Employment after UC Graduation: 2005 2007: Assistant Professor, Department of Electrical Engineering, California Polytechnic State  

E-Print Network [OSTI]

and Educational Activity on Gallium-Nitride (GaN) Lasers and Light Emitting Diodes (LEDs)" International Journal

Boolchand, Punit

222

3-D view of 1-D nanostructures January 6th, 2012 Filed under Nano Science Tagged cormick-school, engineering,  

E-Print Network [OSTI]

cormick-school, engineering, esearchers-at-the, gallium-nitride, great-promise, have-found, mccormick

Espinosa, Horacio D.

223

Photovoltaic Single-Crystalline, Thin-Film Cell Basics | Department of  

Broader source: Energy.gov (indexed) [DOE]

Single-Crystalline, Thin-Film Cell Basics Single-Crystalline, Thin-Film Cell Basics Photovoltaic Single-Crystalline, Thin-Film Cell Basics August 20, 2013 - 2:50pm Addthis Single-crystalline thin films are made from gallium arsenide (GaAs), a compound semiconductor that is a mixture of gallium and arsenic. Gallium arsenide (GaAs) is a compound semiconductor, a mixture of gallium and arsenic. Gallium is a byproduct of the smelting of other metals, notably aluminum and zinc, and it is rarer than gold. Arsenic is not rare, but it is poisonous. Gallium arsenide has been developed for use in solar cells at about the same time that it has been developed for light-emitting diodes, lasers, and other electronic devices that use light. GaAs solar cells offer several benefits: The GaAs bandgap is 1.43 eV-nearly ideal for single-junction solar

224

In situ chemical sensing in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time  

E-Print Network [OSTI]

; accepted 14 June 2005; published 18 July 2005 Gallium nitride and its alloys promise to be key materials.1116/1.1993616 I. INTRODUCTION In recent years, gallium-nitride GaN - and aluminum- gallium-nitride AlGaN -based are grown at high temperatures e.g., up to 1100 °C using large concentrations of H2 carrier and NH3 N source

Rubloff, Gary W.

225

NREL: Process Development and Integration Laboratory - Copper Indium  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Copper Indium Gallium Diselenide Cluster Tool Capabilities Copper Indium Gallium Diselenide Cluster Tool Capabilities The Copper Indium Gallium Diselenide (CIGS) cluster tool in the Process Development and Integration Laboratory offers powerful capabilities with integrated chambers for depositing, processing, measuring, and characterizing photovoltaic materials and devices. You can read more on the rationale for developing this cluster tool and its capabilities, and check out the National Solar Technology Roadmap for CIGS Photovoltaics. Contact Miguel Contreras for more details on these capabilities. The Copper Indium Gallium Diselenide cluster tool, manufactured by DCA Instruments, will be operational in 2009. Techniques will include evaporation; radiofrequency, direct-current (DC), and pulsed DC sputtering;

226

Stereocomplexes of A?B?A Triblock Copolymers Based on Poly(l-Lactide) and Poly(d-Lactide) A Blocks  

Science Journals Connector (OSTI)

An analogous series of A?B?A triblock copolymers was prepared with DLA. ... The DSC curves were calibrated with n-heptane, mercury, gallium, indium, and zinc. ...

Hans R. Kricheldorf; Simon Rost; Christoph Wutz; Abraham Domb

2005-07-13T23:59:59.000Z

227

Fabrication of ?-Ga2O3 thin films and solar-blind photodetectors by laser MBE technology  

Science Journals Connector (OSTI)

Laser molecular beam epitaxy technology has been employed to deposit ?-gallium oxide (?-Ga2O3) on (0001) sapphire substrates. After optimizing the...

Guo, Daoyou; Wu, Zhenping; Li, Peigang; An, Yuehua; Liu, Han; Guo, Xuncai; Yan, Hui; Wang, Guofeng; Sun, Changlong; Li, Linghong; Tang, Weihua

2014-01-01T23:59:59.000Z

228

E-Print Network 3.0 - anisotropy physics Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

physics Search Powered by Explorit Topic List Advanced Search Sample search results for: anisotropy physics Page: << < 1 2 3 4 5 > >> 1 Gallium crystallization: implication for the...

229

Photonic crystal light emitting diode.  

E-Print Network [OSTI]

?? This master's thesis describe electromagnetic simulations of a gallium antimonide (GaSb) light emitting diode, LED. A problem for such devices is that most of… (more)

Leirset, Erlend

2010-01-01T23:59:59.000Z

230

E-Print Network 3.0 - americium arsenides Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: of gallium arsenide, a semiconductor, which is used in advanced optoelectronics, lasers, microwave circuits... , and solar cells. To determine material...

231

E-Print Network 3.0 - adaptive nitride-based coatings Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

DELAUSANNE Summary: AND ELECTRONICS PROF. N. GRANDJEAN 33 III-NITRIDE BASED OPTOELECTRONIC DEVICES 34 GALLIUM NITRIDE-BASED 2D... FOR DIVERSE APPLICATIONS 84 HOLE ARRAY...

232

E-Print Network 3.0 - aluminum alloys grain Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

aluminum... -lithium and aluminum-gallium has been studied. In ... Source: DOE Office of Energy Efficiency and Renewable Energy, Hydrogen, Fuel Cells and Infrastructure...

233

Tailored Ceramics for Laser Applications /  

E-Print Network [OSTI]

diffusion kinetics of rare-earth elements in YAG. . . .values for rare- earth elements in YAG. . . . . . . . . .6] D. J. Cherniak, “Rare earth element and gallium diffusion

Hollingsworth, Joel Philip

2013-01-01T23:59:59.000Z

234

Colorado School of Mines Researchers Win Patent | Critical Materials...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

oxine functionalized groups. The original work was focused on separating iron and gallium, but the technology may have future applicability to the separation of rare earth elements...

235

E-Print Network 3.0 - aluminium incorporating al-hf Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solar Cells May See Off Silicon Summary: which involves growing alternate layers of gallium arsenide (GaAs) and aluminium arsenide (Al... be incorporated into. "If you can...

236

E-Print Network 3.0 - americium hydroxides Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Collection: Computer Technologies and Information Sciences 50 The aqueous geochemistry of gallium, germanium, indium and scandium Summary: Chemical Society 85, 3533-3539 sense,...

237

E-Print Network 3.0 - antimony base alloys Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

applied... communications equipment, including computers and cell phones, as well as in gallium-based solar cells that power... in portable defibrillator machines. Bismuth,...

238

E-Print Network 3.0 - aluminium fluorides Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Delhi Collection: Biotechnology ; Biology and Medicine 63 The aqueous geochemistry of gallium, germanium, indium and scandium Summary: , fluoride, sulfate and phosphate, and...

239

E-Print Network 3.0 - antimony 133 Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

increases with the antimony molar fraction... boat with several compartments. The gallium solution contains GaAs for saturation and metallic antimony Source: Ecole...

240

Solar Innovation Timeline | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

cell Photo of two researchers analyzing a thin, circular shaped film under a small light. NREL researchers develop a gallium indium phosphidegallium arsenide solar cell...

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

History | Department of Energy  

Energy Savers [EERE]

cell Photo of two researchers analyzing a thin, circular shaped film under a small light. NREL researchers develop a gallium indium phosphidegallium arsenide solar cell...

242

Performance testing and Bayesian Reliability Analysis of small diameter, high power electric heaters for the simulation of nuclear fuel rod temperatures.  

E-Print Network [OSTI]

??The conversion of plutonium from a nuclear weapon to nuclear reactor fuel requires an evaluation of the residual gallium as a potential corrosive material within… (more)

O'Kelly, David Sean

2012-01-01T23:59:59.000Z

243

Analyse og konstruksjon av en klasse B effektforsterker i GaN teknologi; Class B power amplifier design with GaN technology.  

E-Print Network [OSTI]

??De senere årene har vist en stadig økende interesse for transistorer basert på GalliumNitrid, spesielt i design av effektforsterkere for trådløse applikasjoner. Denne rapportenbeskriver to… (more)

Mogstad, Einar Berge

2010-01-01T23:59:59.000Z

244

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 2, FEBRUARY 2003 643 High Linearity and High Efficiency of Class-B Power  

E-Print Network [OSTI]

Identifier 10.1109/TMTT.2002.807682 The gallium­nitride material system is a leading contender for microwave

Rodwell, Mark J. W.

245

E-Print Network 3.0 - arsenide thin films Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering 14 Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy Summary: :jap.aip.orgjap...

246

Thin Film Solar Technologies | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Name: Thin Film Solar Technologies Place: South Africa Product: Producers of thin-film copper, indium, gallium, sulphur, selenium modules....

247

Alta Devices Develops World Record Setting Thin-Film Solar Cell  

Office of Energy Efficiency and Renewable Energy (EERE)

EERE supported the development of Alta Devices' thin film Gallium Arsenide photovoltaic technology that set a world record for conversion efficiency.

248

MRS Online Publications Page 1 of 10 http://www.mrs.org/publications/epubs/proceedings/fall2002/l/ 07/22/03  

E-Print Network [OSTI]

.C. Chen, D.B. Fenner, T.D. Moustakas, and George Chu Growth of Oriented Gallium Nitride Films on Amorphous

Wetzel, Christian M.

250

CX-010895: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Development and Industrialization of Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Light Emitting Diodes LEDs on Patterned Sapphire Substrate (PSS) for Low Cost Emitter Architecture CX(s) Applied: B3.6 Date: 06/27/2013 Location(s): California Offices(s): National Energy Technology Laboratory

251

J. Phys. III Yance 7 (1997) 1495-1503 JULY 1997, PAGE 1495 Interaction of Copper with Dislocations in GaAs  

E-Print Network [OSTI]

. The interaction of copper with dislocations was studied in silicon-doped gallium arsenide by means growth or subsequent processing steps ill. In gallium arsenide, copper has two levels in the band gap solubility of Cu in GaAs at room temperature. The electrically inactive copper forms precipitates [3

Boyer, Edmond

252

Zone Melting  

Science Journals Connector (OSTI)

...four-turn induction coils of water-cooled copper tubing...by introducing a bit of water vapor into the hydrogen...apparatus (6). The water vapor combines with the...indium antimo-nide, gallium arsenide, gallium phos-phide...

W. G. Pfann

1962-03-30T23:59:59.000Z

253

This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE JOURNAL OF PHOTOVOLTAICS 1  

E-Print Network [OSTI]

as presented, with the exception of pagination. IEEE JOURNAL OF PHOTOVOLTAICS 1 Gallium Arsenide Solar Cell--Gallium arsenide, nanospheres, photovoltaic systems, whispering gallery modes (WGMs). I. INTRODUCTION THE route as the active layer is thinned [2]. Thin-film photovoltaics offer the possibility to significantly reduce

Atwater, Harry

254

Induced Optical Losses in Optoelectronic Devices due to Focused Ion Beam Damages  

E-Print Network [OSTI]

A study of damages caused by gallium focused ion beam (FIB) into III-V compounds is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analysis shows that local heating is negligible. Gallium implantation is shown to occur over areas tens of nanometers thick. Gallium accumulation as well as selective sputtering during III-V compounds milling is expected. Particularly, for GaAs, this effect leads to gallium segregation and formation of metallic clusters. Microdisk resonators were fabricated using FIB milling with different emission currents to analyze these effects on a device. It is shown that for higher emission current, thus higher implantation doses, the cavity quality factor rapidly decreases due to optical scattering losses induced by implanted gallium atoms.

Vallini, Felipe; Reis, Elohim Fonseca dos; von Zuben, Antônio Augusto; Frateschi, Newton Cesário

2012-01-01T23:59:59.000Z

255

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

256

Assessment of the Passivation Capabilities of Two Different Covalent Chemical Modifications on GaP(100)  

Science Journals Connector (OSTI)

With respect to toxicity, the UDA-functionalized GaP provided better passivation which was confirmed by less gallium leaching into water and saline solutions. ... Due to its promising characteristics for device fabrication, gallium arsenide (GaAs) has been extensively studied and the formation of self-assembled monolayers has been of interest. ... A general increase in the Ga/P ratio can be seen in the surfaces exposed to solutions compared to the clean surface which is attributed to the greater solubility of the phosphorus oxide (P2O5) compared to the gallium oxide (Ga2O3). ...

David Richards; Dmitry Zemlyanov; Albena Ivanisevic

2010-02-03T23:59:59.000Z

257

Spectral broadening in femtosecond laser written waveguides in chalcogenide glass  

Science Journals Connector (OSTI)

Nonlinear spectral broadening to 200 nm, from an initial width of 50 nm, has been demonstrated in gallium lanthanum sulphide glass waveguides from 1540 nm, 200 fs pulses at 30...

Hughes, Mark A; Yang, Weijia; Hewak, Daniel W

2009-01-01T23:59:59.000Z

258

Barrier Coatings for Thin Film Solar Cells: Final Subcontract Report, September 1, 2002 -- January 30, 2008  

SciTech Connect (OSTI)

This program has involved investigations of the stability of CdTe and copper-indium-gallium-diselenide (CIGS) solar cells under damp heat conditions and effects of barrier coatings.

Olsen, L. C.

2010-03-01T23:59:59.000Z

259

Photocurrent Spectroscopy of CdS/Plastic, CdS/Glass, and ZnTe/GaAs Hetero-pairs Formed with Pulsed-laser Deposition.  

E-Print Network [OSTI]

?? This dissertation presents photocurrent (PC) spectroscopy of thin-film cadmium sulfide (CdS) on plastic, CdS on glass, and zinc telluride (ZnTe) on gallium arsenide (GaAs)… (more)

Acharya, Krishna Prasad

2009-01-01T23:59:59.000Z

260

A compact transport and charge model for GaN-based high electron mobility transistors for RF applications  

E-Print Network [OSTI]

Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are rapidly emerging as front-runners in high-power mm-wave circuit applications. For circuit design with current devices and to allow sensible future ...

Radhakrishna, Ujwal

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Applied Materials Develops an Advanced Epitaxial Growth System to Bring Down LED Costs  

Broader source: Energy.gov [DOE]

With the help of DOE funding, Applied Materials has developed an advanced epitaxial growth system for gallium nitride (GaN) LED devices that decreases operating costs, increases internal quantum efficiency, and improves binning yields.

262

2338 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 30, NO. 4, APRIL 2015 Optically Switched-Drive-Based Unified Independent  

E-Print Network [OSTI]

as well. Index Terms--Active gate drive, di/dt, dv/dt, electromagnetic interference (EMI), gallium. However, this leads to higher di/dt and dv/dt, which in turn, causes higher electromagnetic interference

Mazumder, Sudip K.

263

Johanna Solar Technology GmbH JST | Open Energy Information  

Open Energy Info (EERE)

Product: German manufacturer of copper-indium-gallium-sulphide-selenium (CIGSSe) thin-film solar modules. References: Johanna Solar Technology GmbH (JST)1 This article is a...

264

U.S. GEOLOGICAL SURVEY--MINERALS INFORMATION 1 By Deborah A. Kramer  

E-Print Network [OSTI]

). to produce optoelectronic devices and integrated circuits for Increased demand for GaAs resulted in several U. Consumption Optoelectronic devices continued to be the largest end use for gallium, with 59% of total

265

Improvement of orange ii photobleaching by moderate Ga3+ doping of titania and detrimental effect of structural disorder on Ga overloading  

Science Journals Connector (OSTI)

Highly photoactive Ga3+-doped anatase modification of titania was prepared by homogeneous hydrolysis of aqueous solutions mixture of titanium oxo-sulphate TiOSO4 and gallium(III) nitrate with urea. Incorporation of Ga3+ ...

Václav Štengl, Jilí Henych, Michaela Slušná, TomᚠMatys Grygar, Jana Velická, Martin Kormunda

2014-01-01T23:59:59.000Z

266

2H NMR | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

NMR Leads No leads are available at this time. Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR...

267

EMSL - 2H NMR  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

tags2h-nmr en Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR http:www.emsl.pnl.govemslweb...

268

EMSL - In situ catalysis  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

situ-catalysis en Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR http:www.emsl.pnl.govemslweb...

269

In situ catalysis | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Leads No leads are available at this time. Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR...

270

The role of water in generation of group II kimberlite magmas: Constraints from multiple saturation experiments  

Science Journals Connector (OSTI)

...segregation occurred within the studied range of water concentrations, the water solubility in the kimberlite melt exceeded 9 wt%, and...Surovtsev, N.V. (2007) Incongruent melting of gallium nitride at 7.5 GPa. Diamond and Related Materials...

Alexander G. Sokol; Alexey N. Kruk; Yury N. Palyanov

271

E-Print Network 3.0 - annealed gaas spectroscopic Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

regular arrays of submicron GaAs dots on a silicon... . Annealing in arsine converted the gallium to GaAs, and caused the dots to develop faceted features... by an anneal in...

272

CX-010873: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Ammonothermal Bulk Gallium Nitride Crystal Growth for Energy Efficient Lightning and Power Electronics CX(s) Applied: B3.6 Date: 05/22/2013 Location(s): California Offices(s): Advanced Research Projects Agency-Energy

273

Liquid Exfoliation of Layered Materials  

Science Journals Connector (OSTI)

...Generalizing solubility parameter theory...of multicomponent solubility parameters for...N. , Role of solubility parameters in understanding...Bourlinos A. B. ., Aqueous-phase exfoliation...hexagonal boron nitride nanosheets . Journal...into indium and gallium selenides . Phys...

Valeria Nicolosi; Manish Chhowalla; Mercouri G. Kanatzidis; Michael S. Strano; Jonathan N. Coleman

2013-06-21T23:59:59.000Z

274

E-Print Network 3.0 - all-solid-state dye-sensitized solar Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

spectrum Poly-Si CdTe CIGS (Copper-Indium-Gallium-Selenide) Organic and Dye-Sensitized Solar Cells 12;Cd... ;Light Concentration using Nanoparticle Plasmon Resonances 12;Dye...

275

American Elements | Open Energy Information  

Open Energy Info (EERE)

Elements Place: Los Angeles, California Zip: 90024 Product: US-based manufacturer and supplier of PV feedstocks such as silicon, CIS, CIGS-based and Gallium-based materials....

276

Sorption behavior of Ga(III) and In(III) into a microcapsule containing long-chain alkylphosphonic acid monoester .  

E-Print Network [OSTI]

??The sorption behavior of gallium and indium into a microcapsule containing 2-ethylhexylphosphonic acid mono-2-ethylhexyl ester is investigated. The effects of pH and metal concentration on… (more)

Kamio, E.

2005-01-01T23:59:59.000Z

277

Gordon Research Conferences  

Science Journals Connector (OSTI)

...Polysac-charide adsorbents for ethanol-water separation." Membrane processes...boundaries in semiconduc-tors:" Gallium arsenide thin films (C. B. Duke, session...transduction." 20 August. Ion and water movements across epithelial membranes...

Alexander M. Cruickshank

1981-03-13T23:59:59.000Z

278

Spectroscopic Study of the Simultaneous Adsorption of PVP and Azelaic Acid on ?-Alumina  

Science Journals Connector (OSTI)

A 180° backscattering geometry and an indium gallium arsenide detector were applied. ... The azelaic acid concentration was not equal in the two solvents, due to the limited solubility in water. ...

Ildikó Száraz; Willis Forsling

2001-05-23T23:59:59.000Z

279

Gordon Research Conferences  

Science Journals Connector (OSTI)

...Robert Charles Allen, "Water in epoxy resins. Thermodynamics...Raman scat-tenng in gallium arsenide." Robert Silby, "Many...Princeton, NJ 08544. Water and Aqueous Solutions...structure and dynamics of water (A. H. Narten, discussion...

ALEXANDER M. CRUICKSHANK

1986-03-07T23:59:59.000Z

280

Hydrogen and minor element incorporation in synthetic rutile  

Science Journals Connector (OSTI)

...in a decrease in H solubility. Variation in the solubility of different oxides...substitution|solubility|spectroscopy...GPa, 1100C under water-saturated conditions...MnTiO3 (Ti), gallium arsenide (Ga), chromium...

G. D. Bromiley; N. Hilairet

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Geochemical Evolution of a High Arsenic, Alkaline Pit-Lake in the Mother Lode Gold District, California  

Science Journals Connector (OSTI)

...cobalt metals, gallium arsenide, galena, wollastonite...ultrapure (MilleQ) water and analyzed as...account for its higher solubility in ground water relative to waters...reflect the lower solubility of CO2 in water with slightly higher...

Kaye S. Savage; Roger P. Ashley; Dennis K. Bird

282

Gordon Research Conferences: Program for 1967  

Science Journals Connector (OSTI)

...chromatography"; K. L. Hoy, "Uses of solubility parameter." 21 July. E. B...Davey, "Growth and properties of gallium arsenide films (C. Feldman, discussion...desert sand glass"; I. Burn, "Water in fused SiO2." 1 September...

W. George Parks

1967-03-10T23:59:59.000Z

283

Gordon Research Conferences  

Science Journals Connector (OSTI)

...developments in water-borne coatings...Hoy, "Separating solubility parameters of polymers...experiments." 18 July. Gallium arsenide (R. K. Wil-lardson...processes in surface waters"; T. Graedel...Thermodesorption of water from glass fiber...

Alexander M. Cruickshank

1985-03-01T23:59:59.000Z

284

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

285

Nuvosun Inc | Open Energy Information  

Open Energy Info (EERE)

Nuvosun Inc Place: Palo Alto, California Zip: 94303-4601 Product: California-based copper indium gallium (di)selenide (CIGS) thin film PV maker. References: Nuvosun Inc1 This...

286

Association between oxygen vacancies and trivalent dopants in crystalline and amorphous ZnO  

E-Print Network [OSTI]

Density functional theory calculations are used to investigate the structure and binding energies of clusters formed between oxygen vacancies and trivalent dopant atoms (indium, gallium and aluminium) substituted into zinc oxide. Our results show...

Muñoz Ramo, D.; Chroneos, A.; Rushton, M. J. D.; Bristowe, P .D.

2014-03-31T23:59:59.000Z

287

PTIP Ltd | Open Energy Information  

Open Energy Info (EERE)

PTIP Ltd Jump to: navigation, search Name: PTIP Ltd Place: South Africa Sector: Solar Product: Thin-film Copper-indium-gallium-sulphur-selenide solar cell technology spinout from...

288

Tunnel MOS Heterostructure Field Effect Transistor for RF Switching Applications  

E-Print Network [OSTI]

. ..................................................................................... 5 Figure 4. The lattices of N-face and Ga-face gallium nitride. .......................................... 10 Figure 5. The lattice constants and bandgaps of III-nitride semiconductors and their alloys... semiconductors and particularly Gallium Nitride (GaN) are gaining a lot of attention for high speed and high power switching applications due to their large critical breakdown electric fields, high mobility and high saturated electron velocity [1, 2]. GaN has...

Rezanezhad Gatabi, Iman

2013-06-06T23:59:59.000Z

289

Imaging of semiconductors using a flying laser spot scanning system  

E-Print Network [OSTI]

be obsezved in the wavelength vs. absorption coefficient curves shown in Figure 1 for both a direct and an indirect semiconductor material (gallium-arsenide and silicon). It is only in the direct absorption and subsequent generation of a hole electron pair... in wavelength of light used to generate carriers pro- vides some contzol over the depth of the material analyzed. Long wavelength energy (- 1 micrometer) penetrates deeply into silicon, while gallium phosphide is considered almost transparent for a typical...

Richardson, Thomas William

2012-06-07T23:59:59.000Z

290

Metal organic chemical vapor deposition of 111-v compounds on silicon  

DOE Patents [OSTI]

Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

Vernon, Stanley M. (Wellesley, MA)

1986-01-01T23:59:59.000Z

291

Method for producing superconductors  

SciTech Connect (OSTI)

In a method for producing v/sub 3/Ga superconductors which comprises forming a composite of a core portion and a sheath portion surrounding said core portion, said sheath portion being composed of a gallium-containing alloy selected from the group consisting of copper-gallium and copper-silver-gallium alloys, and said core portion being composed of a vanadium metal, elongating said composite, and heat-treating the resulting elongated composite to form a v/sub 3/Ga layer between said sheath and core portions; the improvement wherein the gallium-containing alloy has a gallium content of 0.1 to 30 atomic percent and additionally contains at least one metal selected from the group consisting of 0.05 to 5 atomic percent of magnesium, 0.5 to 10 atomic percent of aluminum , 0.1 to 10 atomic percent of cerium and 0.05 to 10 atomic percent of sodium, and the vanadium metal is a vanadium alloy containing 0.1 to 15 atomic percent of gallium.

Asano, T.; Tachikawa, K.; Tanaka, Y.; Yoshida, Y.

1981-06-23T23:59:59.000Z

292

InAs quantum wire induced composition modulation in an In{sub 0.53}Ga{sub 0.37}Al{sub 0.10}As barrier layer grown on an InP substrate  

SciTech Connect (OSTI)

Composition modulations are observed by transmission electron microscopy in In{sub 0.53}Ga{sub 0.37}Al{sub 0.10}As barrier layers that overgrow both single- and multilayer InAs quantum wire structures grown on an InP substrate. Indium-rich (gallium-deficient) regions were observed in the region of the barrier layer lying directly above individual quantum wires, while indium-deficient (gallium-rich) regions were detected in the barrier above the gaps between adjacent underlying quantum wires. The magnitude of such modulation was typically 7% (atomic percent) for both indium and gallium as estimated from the energy dispersive x-ray analysis. The origin of such composition modulations was determined by modeling the chemical potential distribution for indium and gallium on the growth front of the barrier layer at the initial capping stage of the quantum wires with finite element simulations. It is found that the number and positions of the indium-rich regions are determined by the combined effects of strain and surface energy distributions on the barrier material capping the quantum wires. Moreover the estimated magnitudes of the composition modulation for both indium and gallium from the finite element models are in good agreement with the experimental observations. This method provides a simple way to understand the origin of, and to estimate the magnitude of the quantum wire-induced composition modulation in the barrier layer.

Cui, K. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Robinson, B. J. [Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Thompson, D. A. [Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2010-08-15T23:59:59.000Z

293

Group III-nitride thin films grown using MBE and bismuth  

DOE Patents [OSTI]

The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

Kisielowski, Christian K. (Peidmont, CA); Rubin, Michael (Berkeley, CA)

2000-01-01T23:59:59.000Z

294

Group III-nitride thin films grown using MBE and bismuth  

DOE Patents [OSTI]

The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

Kisielowski, Christian K. (Piedmont, CA); Rubin, Michael (Berkeley, CA)

2002-01-01T23:59:59.000Z

295

Functional materials: electronics, information and sensors  

Science Journals Connector (OSTI)

Functional materials are those that have properties enabling them to preform a specific functional purpose, e.g. electrical, magnetic or optical. The rapid development of the technology of transistors and intergrated circuits will continue into the future with design incorporating new materials, notably gallium arsenide. Silica glass is finding increasing application in photonics, light emitting diodes and optical fibres for telephone cables. Optical-fibre technology depends on reliable and durable lasers which now use compound semiconductors such as indium-gallium-arsenide phosphide. It is anticipated that new materials application (indium-gallium-arsenide phosphide) will contribute towards progress in photovoltaics. Interest in superconducting material has heightened during 1980s with the promise that high-temperature superconductivity offers for more-efficient power generation and transmission. In future advantage will come from developing economic and reliable ways of producing functional materials to meet increasing demand.

Merton C. Flemings

1990-01-01T23:59:59.000Z

296

High efficiency radioisotope thermophotovoltaic prototype generator  

SciTech Connect (OSTI)

A radioisotope thermophotovoltaic generator space power system (RTPV) is lightweight, low-cost alternative to the present radioisotope thermoelectric generator system (RTG). The fabrication of such an RTPV generator has recently become feasible as the result of the invention of the GaSb infrared sensitive photovoltaic cell. Herein, the authors present the results of a parametric study of emitters and optical filters in conjuction with existing data on gallium antimonide cells. They compare a polished tungsten emitter with an Erbia selective emitter for use in combination with a simple dielectric filter and a gallium antimonide cell array. They find that the polished tungsten emitter is by itself a very selective emitter with low emissivity beyond 4 microns. Given a gallium antimonide cell and a tungsten emitter, a simple dielectric filter can be designed to transmit radiant energy below 1.7 microns and to reflect radiant energy between 1.7 and 4 microns back to the emitter. Because of the low long wavelength emissivity associated with the polished tungsten emitter, this simple dielectric filter then yields very respectable system performance. Also as a result of the longer wavelength fall-off in the tungsten emissivity curve, the radiation energy peak for a polished tungsten emitter operating at 1300 K shifts to shorter wavelengths relative to the blackbody spectrum so that the radiated energy peak falls right at the gallium antimonide cell bandedge. The result is that the response of the gallium antimonide cell is well matched to a polished tungsten emitter. The authors propose, therefore, to fabricate an operating prototype of a near term radioisotope thermophotovoltaic generator design consisting of a polished tungsten emitter, standard gallium antimonide cells, and a near-term dielectric filter.

Avery, J.E.; Samaras, J.E.; Fraas, L.M.; Ewell, R. [JX Crystals, Inc., Issaquah, WA (United States)

1995-10-01T23:59:59.000Z

297

Theory and Design of Smith-Purcell Semiconductor Terahertz Sources  

E-Print Network [OSTI]

-power semiconductor devices, but have also been demonstrated to be highly useful in the development of state of the art light emitting diode (LED) technology. One of the more promising LED materials, gallium nitride (GaN) comes from the “three-nitride” (III-N) family...-power semiconductor devices, but have also been demonstrated to be highly useful in the development of state of the art light emitting diode (LED) technology. One of the more promising LED materials, gallium nitride (GaN) comes from the “three-nitride” (III-N) family...

Smith, Don DeeWayne

2013-12-06T23:59:59.000Z

298

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

299

An investigation on reliable passivation of GaP  

E-Print Network [OSTI]

reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index... reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index...

Greaves King, Carlos A.

2012-06-07T23:59:59.000Z

300

Self-Assembled Monolayers of Alkylphosphonic Acid on GaN Substrates  

Science Journals Connector (OSTI)

In addition to their applications for short-wavelength optoelectronic and high-power electronics, group III nitrides (AlN, GaN, and InN) have been employed as components of chemical and biological sensors for gas and solution samples. ... (27) In the basic solution, ?water decreased quickly to reach a smaller plateau value, probably reflecting the electrostatic repulsion between the deprotonated ODPA and negatively charged gallium oxide surface(46) in addition to the higher solubility of deprotonated ODPA in more basic solution. ... Gallium nitride is a wide band gap semiconductor that demonstrates a unique set of optical and electrical properties as well as aqueous stability and biocompatibility. ...

Takashi Ito; Sarah M. Forman; Chundi Cao; Feng Li; Charles R. Eddy, Jr.; Michael A. Mastro; Ronald T. Holm; Richard L. Henry; Keith L. Hohn; J. H. Edgar

2008-06-04T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells  

SciTech Connect (OSTI)

The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk conductivity by using gallium source materials of different degrees of impurity concentrations. While highest-purity gallium is accompanied by clear conduction through the sample bulk, intentional impurity incorporation leads to a bulk resistance over 1 M?, independent of applied magnetic fields. In addition, ultra high electron mobilities for GaAs/AlGaAs structures fabricated in a molecular beam epitaxy system used for the growth of Sb-based samples are reported.

Charpentier, Christophe; Fält, Stefan; Reichl, Christian; Nichele, Fabrizio; Nath Pal, Atindra; Pietsch, Patrick; Ihn, Thomas; Ensslin, Klaus; Wegscheider, Werner [Laboratory for Solid State Physics, ETH Zürich, 8093 Zürich (Switzerland)] [Laboratory for Solid State Physics, ETH Zürich, 8093 Zürich (Switzerland)

2013-09-09T23:59:59.000Z

302

Method for non-invasive detection of ocular melanoma  

DOE Patents [OSTI]

There is described an apparatus and method for diagnosing ocular cancer that is both non-invasive and accurate which comprises two radiation detectors positioned before each of the patient's eyes which will measure the radiation level produced in each eye after the administration of a tumor-localizing radiopharmaceutical such as gallium-67.

Lambrecht, Richard M. (Quogue, NY); Packer, Samuel (Floral Park, NY)

1984-01-01T23:59:59.000Z

303

Synthesis, Growth, and Properties of TlGa{sub 1-x}Yb{sub x}S{sub 2} Crystals  

SciTech Connect (OSTI)

The synthesis of TlGa{sub 1-x}Yb{sub x}S{sub 2} single crystals with the partial substitution of ytterbium for gallium is described. Variations in the electric conductivity of grown crystals irradiated with X-rays of various intensities are measured.

Kerimova, E.M.; Mustafaeva, S.N.; Asadov, Yu.G.; Kerimov, R.N. [Institute of Physics, National Academy of Sciences, pr. Dzhavida 33, Baku, 370143 (Azerbaijan)

2005-12-15T23:59:59.000Z

304

Non-invasive nuclear detection of choroidal melanoma  

SciTech Connect (OSTI)

The biodistribution of over 30 radiopharmaceuticals thought to be tumor-seeking agents were studied using hamsters and mice. Several radiopharmaceuticals were found to be appropriate as melanoma localizing agents. Results with modified dual pinhole collimator and a pigment affinic agent (iodine-123 labeled quinoline) and a non-specific tumor seeking agent (gallium-67 citrate) are also reported.

Packer, S.; Lambrecht, R.M.; Fairchild, R.G.; Wolf, A.P.; Atkins, H.L.; Fand, I.

1981-01-01T23:59:59.000Z

305

Focused Ion Beam (FIB):  

Science Journals Connector (OSTI)

...al., 1990; Basile et al., 1992; Overwijk et al., 1993). Focused gallium ion...detailed descriptions are given elsewhere (Overwijk et al., 1993; Heaney et al., 2001...Kluwer Academic Publishers, 316 pp. Overwijk, M.H.E., van den Heuvel, F...

Richard WIRTH

306

National Academy of Sciences: Abstracts of Papers To Be Presented at the Annual Meeting, 23-25 April 1956, Washington, D.C  

Science Journals Connector (OSTI)

...A superficial resem-blance between the entire mucosa...of liquid gallium on a sheet of paper in a slowly...light beam of measured energy is supplemented by a...normally obtains its energy, for maintaining integrity...sugar with oxygen. The energy is presumably fed into...

1956-04-20T23:59:59.000Z

307

CX-010973: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

308

CX-011468: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Low-Cost Silicon-Carbide (SiC) and Gallium-Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 10/29/2013 Location(s): Michigan Offices(s): National Energy Technology Laboratory

309

CX-010974: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

310

Top-gate thin-film transistors based on GaN channel layer Rongsheng Chen, Wei Zhou, and Hoi Sing Kwok  

E-Print Network [OSTI]

liquid gallium target. The GaN TFTs exhibit good electrical performance such as field effect mobility of 1 cm2 /Vs, threshold voltage of Ã?0.4 V, on/off current ratio of 105 , and subthreshold swing of 0 electrical sta- bility of ZnO-based TFTs is still a main issue preventing from commercialization.9 Bottom

311

Hybrid structure laser based on semiconductor nanowires and a silica microfiber knot cavity  

E-Print Network [OSTI]

.1063/1.3093821 Semiconductor lasers based on cadmium sulfide CdS , zinc oxide ZnO , gallium nitride GaN nanowires, and gal-earth doped microfiber knot laser with knot diameter below 1 mm failed due to the insufficient pump absorption

Wu, Shin-Tson

312

This content has been downloaded from IOPscience. Please scroll down to see the full text. Download details  

E-Print Network [OSTI]

S is found as a window layer for thin film cadmium telluride (CdTe) and copper indium gallium (di)selenide based solar cells. The recent advances in CdTe/CdS thin film technology and fabrication Materials allowed CdTe/CdS solar cells to emerge as a leader in the growing market of thin film module production

Khare, Sanjay V.

313

Characterization and Modeling of Silicon Carbide Power Devices and Paralleling Operation  

E-Print Network [OSTI]

Characterization and Modeling of Silicon Carbide Power Devices and Paralleling Operation Yutian Cui silicon carbide (SiC) power devices. The devices have been tested for both static and dynamic like silicon carbide (SiC) and gallium nitride (GaN) are becoming more attractive. SiC power devices

Tolbert, Leon M.

314

Hydrogen, Fuel Cells, and Infrastructure Technologies FY 2002 Progress Report Section VI. Safety and Codes & Standards  

E-Print Network [OSTI]

to H2 from 0-100% at 450o C in N2 background Future Directions · Fabricate 2nd generation sensors.A Safety VI.A.1 Gallium Nitride Integrated Gas/Temperature Sensors for Fuel Cell System Monitoring catalytic gate field effect transistor (FET) sensors to resolve and detect carbon monoxide (CO

315

Dynamics of Ion Beam Stimulated Surface Mass Transport to Nanopores David P. Hoogerheide1  

E-Print Network [OSTI]

Dynamics of Ion Beam Stimulated Surface Mass Transport to Nanopores David P. Hoogerheide1 membrane, from the substrate side, by rastering a 10-nm diameter, 50 keV gallium ion beam produced by a FEI We explore the ion beam-induced dynamics of the formation of large features at the edges of nanopores

316

JOURNALDE PHYSIQUEIV Colloque C1, supplkmentau Journal de Physique 111,Volume 5,janvier 1995  

E-Print Network [OSTI]

that occur naturally in semi-insulating (SI) Gallium arsenide. The growth and assessment of SI Ga process which is by radiation and convection of heat from the crystal surface into the ambient. The former is uncontrolled as the radiation takes place into a cool chamber; the latter is controllable to an extent

Boyer, Edmond

317

Science and technology news Nanotechnology  

E-Print Network [OSTI]

method to make gallium arsenide solar cells May 20, 2010 by Lin Edwards Enlarge Image of a printed GaAs solar cell with a size ~10 x 10 mm2 on a glass substrate, with simple, metal grid contacts. Image light-sensitive semiconductors could make solar cells, night-vision cameras, and a range of other

Rogers, John A.

318

Home About UsContributeBookstore Advertising Subscribe for Free NOW!  

E-Print Network [OSTI]

.05As for the solar cells. The MESFET device membranes were transferred to glass substrates coated://www.semiconductor-today.com/news_items/2010/MAY/UOI_190510.htm #12;News 19 May 2010 Multi-story production of optoelectronics from Ga gallium arsenide (AlGaAs) layers on GaAs substrates using metal-organic chemical vapor deposition (MOCVD

Rogers, John A.

319

Synthesis and use of (perfluoroaryl) fluoro-aluminate anion  

DOE Patents [OSTI]

A trityl perfluorophenyl alumninate such as tris(2,2',2"-nonafluorobiphenyl)-fluoroaluminate (PBA.sup..crclbar.) and its role as a cocatalyst in metallocene-mediated olefin polymerization is disclosed. Gallium and indium analogs are also disclosed, as are analogs with different anyl groups or different numbers of flourine atoms thereon.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2001-01-01T23:59:59.000Z

320

Aluminum battery alloys  

DOE Patents [OSTI]

Aluminum alloys suitable for use as anode structures in electrochemical cells are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

Thompson, D.S.; Scott, D.H.

1984-09-28T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Matter & Energy Solar Energy  

E-Print Network [OSTI]

See Also: Matter & Energy Solar Energy· Electronics· Materials Science· Earth & Climate Energy and the Environment · Renewable Energy· Environmental Science · Reference Chemical compound· Semiconductor· Gallium at the University of Illinois, the future of solar energy just got brighter. Although silicon is the industry

Rogers, John A.

322

CX-006555: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Gallium Nitride Electronics for Grid ApplicationsCX(s) Applied: A1, A2, A9, A11, B3.6Date: 08/17/2011Location(s): Lexington, MassachusettsOffice(s): Electricity Delivery and Energy Reliability, National Energy Technology Laboratory

323

CX-006556: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Gallium Nitride Electronics for Grid ApplicationsCX(s) Applied: A1, A2, A9, A11, B3.6Date: 08/17/2011Location(s): Cambridge, MassachusettsOffice(s): Electricity Delivery and Energy Reliability, National Energy Technology Laboratory

324

Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates  

E-Print Network [OSTI]

, 37831, E-mail: xiaok@ornl.gov 4 Nanosystem Research Institute, National Institute of Advanced Industrial Information The GaS laminar precursor was obtained by the following method: The method uses a two-zone horizontal furnace with a fused silica tube, into which the sulfur powder and gallium were placed in the low

Geohegan, David B.

325

Friday, May 21, 2010 High-Performance Electronics without the High Price  

E-Print Network [OSTI]

materials. Researchers have used the method to make high-performance image sensors, transistors, and solar exotic semiconductors brings down the cost of high- performance solar cells and microchips. By Katherine Bourzac Compared to silicon, semiconductors like gallium arsenide can be made into solar cells

Rogers, John A.

326

Aluminum battery alloys  

DOE Patents [OSTI]

Aluminum alloys suitable for use as anode structures in electrochemical cs are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

Thompson, David S. (Richmond, VA); Scott, Darwin H. (Mechanicsville, VA)

1985-01-01T23:59:59.000Z

327

PUBLISHED ONLINE: 31 AUGUST 2014 | DOI: 10.1038/NPHYS3049 Gate-tunable superconducting weak link and  

E-Print Network [OSTI]

to control transmission across the device, and conductance measurements are carried out with standard lock Lee, James R. Williams and David Goldhaber-Gordon* Two-dimensional electron systems in gallium they are easily modulated by voltages on nanopatterned gate electrodes. Electron systems at oxide interfaces hold

Loss, Daniel

328

Chemicalscience The industrial processing of carbon  

E-Print Network [OSTI]

by attaching various different water-soluble compounds, including fluorine, aryl radicals and sugars phosphide and gallium nitride. `We are also developing methods to make full scale integrated circuits with the development of a quick and simple way to make them highly soluble. Normal single-wall CNTs are effectively

Rogers, John A.

329

Growth of Core?Shell Ga?GaN Nanostructures via a Conventional Reflux Method and the Formation of Hollow GaN Spheres  

Science Journals Connector (OSTI)

Gallium nitride (GaN) is an important III?V semiconductor with a wide direct band gap of ?3.4 eV. ... LiHMDS exhibits good solubility in TOA. ... The products were collected by centrifugation twice at 7000 rpm for 2 min in hexane, isopropanol, ethanol, and then deionized water. ...

Tz-Jun Kuo; Chi-Liang Kuo; Chun-Hong Kuo; Michael H. Huang

2009-02-05T23:59:59.000Z

330

Fluorine Speciation Analysis Using Reverse Phase Liquid Chromatography Coupled Off-Line to Continuum Source Molecular Absorption Spectrometry (CS-MAS): Identification and Quantification of Novel Fluorinated Organic Compounds in Environmental and Biological Samples  

Science Journals Connector (OSTI)

(1-4) Perfluorinated compounds (PFCs) are especially well-known for their unusual solubility, being simultaneously hydro- and lipophobic. ... (5, 6) This recognition has triggered a boost in interest in the monitoring of PFCs in water, wildlife and food. ... Chemicals used for AAS modifiers, reported by Gleisner et al.,(17) included gallium nitride (99.9%, ...

Zhiwei Qin; David McNee; Heike Gleisner; Andrea Raab; Kwaku Kyeremeh; Marcel Jaspars; Eva Krupp; Hai Deng; Jörg Feldmann

2012-06-11T23:59:59.000Z

331

Current Issues and Problems in the Chemical Vapor Deposition of Diamond  

Science Journals Connector (OSTI)

...SEMICONDUCTORS DIAMOND, GALLIUM NITRIDE AND SILICON-CARBIDE...FROM METHANE HYDROGEN WATER MIXED GAS-USING A MICROWAVE...diamond and cubic boron nitride (c-BN; Bora-zon...be related to a high solubility or mobility for C on...

Walter A. Yarbrough; Russell Messier

1990-02-09T23:59:59.000Z

332

Non-siliceous Mesostructured and Mesoporous Materials  

Science Journals Connector (OSTI)

It was, however, possible to obtain stable materials for alumina as well as for gallium oxide by doping with yttria. ... The problem of the low solubility of the precursors was solved by using formamide as the solvent instead of water. ... Although nitrides can have remarkable stability, not much work has so far been devoted to the synthesis of porous nitride frameworks. ...

Ferdi Schüth

2001-07-10T23:59:59.000Z

333

(Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2007. Indium-containing  

E-Print Network [OSTI]

were exported to Canada for processing. Two companies, one in New York and the other in Rhode Island for the recycling industry to handle because of large capital costs, environmental restrictions, and storage space gallium diselenide (CIGS) solar cells require approximately 50 metric tons of indium to produce 1 gigawatt

334

Phytochrome induces changes in the immunodetectable level of a wall peroxidase that precede growth changes in maize seedlings  

Science Journals Connector (OSTI)

...the 20-min distilled water rinse, the light-treated...with a 3 x 8 array of gallium aluminum arsenide infrared light (IR...loading and distilled water rinse. Sections were...the binding state or solubility of the peroxidase could...

Sung-Ha Kim; James R. Shinkle; Stanley J. Roux

1989-01-01T23:59:59.000Z

335

Corrosion of Electronic Materials and Devices  

Science Journals Connector (OSTI)

...ranging from silicon to gallium arsenide to mercury cadmium...protected against are water vapor and atmospheric...amount of adsorbed water on the surface...several monolayers of water are present on clean...reactivity with or solubility in the existing surface...

R. B. COMIZZOLI; R. P. FRANKENTHAL; P. C. MILNER; J. D. SINCLAIR

1986-10-17T23:59:59.000Z

336

Anomalous Properties of Poly(methyl methacrylate) Thin Films in Supercritical Carbon Dioxide  

Science Journals Connector (OSTI)

The PMMA swelling isotherms are insensitive to changing the substrate from silicon to gallium arsenide. ... The wafers were then rinsed with voluminous amounts of deionized water (NANOpureII, Barnstead) and then dried with nitrogen gas (Matheson Gas Products, >99.999%). ... The solubility of CO2 in the polymer film may be expected to decrease as the compressibility increases. ...

S. M. Sirard; K. J. Ziegler; I. C. Sanchez; P. F. Green; K. P. Johnston

2002-02-01T23:59:59.000Z

337

Cantilever Epitaxy Process Wins R&D 100 Award  

Broader source: Energy.gov [DOE]

Sandia National Laboratories received an R&D 100 Award from R&D Magazine for development of a new process for growing gallium nitride on an etched sapphire substrate. The process, called cantilever epitaxy, promises to make brighter and more efficient green, blue, and white LEDs.

338

Profile NeutronDetector 9-16-04..pmd  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GALLIUM ARSENIDE SEMICONDUCTOR-BASED GALLIUM ARSENIDE SEMICONDUCTOR-BASED NEUTRON DETECTOR B E N E F I T S Portable, Accurate Device Detects and Monitors Neutrons and Nuclear Materials * More accurate and sensitive than other technologies * Performance won't degrade over time * Easy implementation and deployment * Rugged, lightweight, and portable for field use * Reduces false readings * Requires less power * Low mass-production cost (about $1 per chip) * Neutron detection * Detecting and monitoring nuclear materials and weapons * Permanent installations and portable field operation * High-vacuum environments (e.g., physics labs and space platforms) An advanced neutron detector developed by Argonne National Laboratory and Kansas State University accurately detects neutrons and finds concealed nuclear weapons and materials, even in harsh or challenging environments. The key

339

eCopy, Inc.  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

he submitted manuscript has been authored he submitted manuscript has been authored ria contractor of the U. S. Government under contract No. W·31·10S-ENG·38. Accordingly. the U. S. Government retains a nonexclusive, royalty·free license to publish or reproduce the published form of this contribution, or allow others to do so~ for U. S. Government purposes. IDENTIFICATION OF ROOT CAUSE OF VIBRATION OF A LIQUID .. GALLIUM .. COOLED SILICON MONOCHROMATOR AND RECOMMENDATIONS FOR ABATEMENT by S. S. Chen, S. Zhu, M. W. Wambsganss, and J. A. J endrzejczyk Energy Technology Division W.K.Lee Experimental Facilities Division August 1994 Work supported by U. S. DEPARTMENT OF ENERGY Office of Basic Energy Sciences LS-240 IDENTIFICATION OF ROOT CAUSE OF VIBRATION OF A LIQUID .. GALlIUM .. COOLED SILICON MONOCHROMATOR AND

340

CX-009000: Categorical Exclusion Determination | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

0: Categorical Exclusion Determination 0: Categorical Exclusion Determination CX-009000: Categorical Exclusion Determination "High Quality, Low Cost Bulk Gallium Nitride (GaN) Substrates Grown by the Electrochemical Solution Growth Method CX(s) Applied: A9, B3.6 Date: 08/20/2012 Location(s): Missouri Offices(s): Golden Field Office The U.S. Department of Energy (DOE) is proposing to provide federal funding to MEMC Electronic Materials, Inc. MEMC would conduct research and development activities for a two phase project to develop a new process method for growing large bulk gallium nitrate (GaN) crystals at low cost with improved functional properties." CX-009000.pdf More Documents & Publications CX-000845: Categorical Exclusion Determination Energy Storage Systems 2010 Update Conference Presentations - Day 3,

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Categorical Exclusion Determinations: Massachusetts | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

1 1 CX-006559: Categorical Exclusion Determination Dedham Municipal Solar Project CX(s) Applied: A9, B5.1 Date: 08/22/2011 Location(s): Dedham, Massachusetts Office(s): Energy Efficiency and Renewable Energy, Golden Field Office August 17, 2011 CX-006556: Categorical Exclusion Determination Gallium Nitride Electronics for Grid Applications CX(s) Applied: A1, A2, A9, A11, B3.6 Date: 08/17/2011 Location(s): Cambridge, Massachusetts Office(s): Electricity Delivery and Energy Reliability, National Energy Technology Laboratory August 17, 2011 CX-006555: Categorical Exclusion Determination Gallium Nitride Electronics for Grid Applications CX(s) Applied: A1, A2, A9, A11, B3.6 Date: 08/17/2011 Location(s): Lexington, Massachusetts Office(s): Electricity Delivery and Energy Reliability, National Energy

342

Categorical Exclusion Determinations: Arkansas | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Arkansas Arkansas Categorical Exclusion Determinations: Arkansas Location Categorical Exclusion Determinations issued for actions in Arkansas. DOCUMENTS AVAILABLE FOR DOWNLOAD September 16, 2013 CX-010974: Categorical Exclusion Determination Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory September 16, 2013 CX-010973: Categorical Exclusion Determination Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

343

Transphorm Takes Energy Efficiency to a New Level | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Transphorm Takes Energy Efficiency to a New Level Transphorm Takes Energy Efficiency to a New Level Transphorm Takes Energy Efficiency to a New Level February 24, 2012 - 1:20pm Addthis Transphorm's gallium nitride semiconductors could be used to make operating photovoltaic panels, like these on the roof of the Research Support Facility, motor drives and transistors more energy efficient. | Photo courtesy of National Renewable Energy Laboratory. Transphorm's gallium nitride semiconductors could be used to make operating photovoltaic panels, like these on the roof of the Research Support Facility, motor drives and transistors more energy efficient. | Photo courtesy of National Renewable Energy Laboratory. Michael Hess Michael Hess Former Digital Communications Specialist, Office of Public Affairs What are the key facts?

344

Categorical Exclusion Determinations: A9 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

August 17, 2011 August 17, 2011 CX-006556: Categorical Exclusion Determination Gallium Nitride Electronics for Grid Applications CX(s) Applied: A1, A2, A9, A11, B3.6 Date: 08/17/2011 Location(s): Cambridge, Massachusetts Office(s): Electricity Delivery and Energy Reliability, National Energy Technology Laboratory August 17, 2011 CX-006555: Categorical Exclusion Determination Gallium Nitride Electronics for Grid Applications CX(s) Applied: A1, A2, A9, A11, B3.6 Date: 08/17/2011 Location(s): Lexington, Massachusetts Office(s): Electricity Delivery and Energy Reliability, National Energy Technology Laboratory August 16, 2011 CX-006538: Categorical Exclusion Determination Bringing Hydrogen Fuel Cell Systems into Green Communities - University Retirement Center at Davis Green Energy Community

345

CX-004886: Categorical Exclusion Determination | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

86: Categorical Exclusion Determination 86: Categorical Exclusion Determination CX-004886: Categorical Exclusion Determination Copper Indium Gallium Sulfur-Selenide (CIGSS) Manufacturing Plant CX(s) Applied: B1.31 Date: 01/05/2011 Location(s): San Jose, California Office(s): Loan Guarantee Program Office The Department of Energy's proposed action is to issue a loan guarantee to Stion Corporation to retrofit Stion's solar panel manufacturing plant at 6321 San Ignacio Avenue in San Jose, California and expand into an adjacent building at 6331 San Ignacio Avenue in order to establish a 135 megawatt nameplate capacity manufacturing plant. Stion produces monolithically integrated thin film photovoltaic modules using single-junction Copper Indium Gallium Sulfur-Selenide (CIGSS) absorbers. DOCUMENT(S) AVAILABLE FOR DOWNLOAD

346

Peering into a Quantum Well | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Peering into a Quantum Well Peering into a Quantum Well Discovery & Innovation Stories of Discovery & Innovation Brief Science Highlights SBIR/STTR Highlights Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 09.01.11 Peering into a Quantum Well Supercomputer simulation illuminates mysterious "droop" in solid-state lighting. Print Text Size: A A A Subscribe FeedbackShare Page Gallium nitride light-emitting diode. Image courtesy of Lawrence Berkeley National Laboratory Gallium nitride light-emitting diode. Despite being cool, ultra-efficient, and long-lasting, solid-state lighting has yet to conquer the general lighting market partly due to a problem called "efficiency droop." New findings from simulations carried out at

347

Page not found | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

71 - 13980 of 28,560 results. 71 - 13980 of 28,560 results. Download CX-010894: Categorical Exclusion Determination Graphene-Based Composite Sensor for Energy Applications CX(s) Applied: B3.6 Date: 06/27/2013 Location(s): West Virginia Offices(s): National Energy Technology Laboratory http://energy.gov/nepa/downloads/cx-010894-categorical-exclusion-determination Download CX-010895: Categorical Exclusion Determination Development and Industrialization of Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Light Emitting Diodes LEDs on Patterned Sapphire Substrate (PSS) for Low Cost Emitter Architecture CX(s) Applied: B3.6 Date: 06/27/2013 Location(s): California Offices(s): National Energy Technology Laboratory http://energy.gov/nepa/downloads/cx-010895-categorical-exclusion-determination

348

NREL: News - NREL Reports 31.1% Efficiency for III-V Solar Cell  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

913 913 NREL Reports 31.1% Efficiency for III-V Solar Cell Conversion-efficiency mark is a world record for a two-junction solar cell measured under one-sun illumination June 24, 2013 The Energy Department's National Renewable Energy Lab has announced a world record of 31.1% conversion efficiency for a two-junction solar cell under one sun of illumination. NREL Scientist Myles Steiner announced the new record June 19 at the 39th IEEE Photovoltaic Specialists Conference in Tampa, Fla. The previous record of 30.8% efficiency was held by Alta Devices. The tandem cell was made of a gallium indium phosphide cell atop a gallium arsenide cell, has an area of about 0.25 square centimeters and was measured under the AM1.5 global spectrum at 1,000 W/m2. It was grown inverted, similar to the NREL-developed inverted metamorphic multi-junction

349

CX-000845: Categorical Exclusion Determination | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

0845: Categorical Exclusion Determination 0845: Categorical Exclusion Determination CX-000845: Categorical Exclusion Determination 25A2445 - Ammonothermal Bulk Gallium Nitride (GaN) Crystal Growth for Energy Efficient Lighting CX(s) Applied: B3.6 Date: 01/15/2010 Location(s): New York Office(s): Advanced Research Projects Agency - Energy This project plans to address the vast energy loss and consumption associated with conventional lighting by developing a new route to large, high-quality, single crystals of gallium nitride. These crystals will serve as substrates for light emitting diodes offering high-efficiency lighting. DOCUMENT(S) AVAILABLE FOR DOWNLOAD CX-000845.pdf More Documents & Publications CX-009889: Categorical Exclusion Determination Power Electronics Research and Development Program Plan

350

Page not found | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

31 - 9940 of 29,416 results. 31 - 9940 of 29,416 results. Download CX-010893: Categorical Exclusion Determination Modification to Demolish Building 900A and Reconstruct Building 900 Project CX(s) Applied: B1.3, B1.15 Date: 06/28/2013 Location(s): Pennsylvania Offices(s): National Energy Technology Laboratory http://energy.gov/nepa/downloads/cx-010893-categorical-exclusion-determination Download CX-010894: Categorical Exclusion Determination Graphene-Based Composite Sensor for Energy Applications CX(s) Applied: B3.6 Date: 06/27/2013 Location(s): West Virginia Offices(s): National Energy Technology Laboratory http://energy.gov/nepa/downloads/cx-010894-categorical-exclusion-determination Download CX-010895: Categorical Exclusion Determination Development and Industrialization of Indium Gallium Nitride/Gallium Nitride

351

Transphorm Takes Energy Efficiency to a New Level | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Transphorm Takes Energy Efficiency to a New Level Transphorm Takes Energy Efficiency to a New Level Transphorm Takes Energy Efficiency to a New Level February 24, 2012 - 1:20pm Addthis Transphorm's gallium nitride semiconductors could be used to make operating photovoltaic panels, like these on the roof of the Research Support Facility, motor drives and transistors more energy efficient. | Photo courtesy of National Renewable Energy Laboratory. Transphorm's gallium nitride semiconductors could be used to make operating photovoltaic panels, like these on the roof of the Research Support Facility, motor drives and transistors more energy efficient. | Photo courtesy of National Renewable Energy Laboratory. Michael Hess Michael Hess Former Digital Communications Specialist, Office of Public Affairs What are the key facts?

352

Page not found | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

71 - 13680 of 26,764 results. 71 - 13680 of 26,764 results. Download CX-010895: Categorical Exclusion Determination Development and Industrialization of Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Light Emitting Diodes LEDs on Patterned Sapphire Substrate (PSS) for Low Cost Emitter Architecture CX(s) Applied: B3.6 Date: 06/27/2013 Location(s): California Offices(s): National Energy Technology Laboratory http://energy.gov/nepa/downloads/cx-010895-categorical-exclusion-determination Download CX-010896: Categorical Exclusion Determination California Low Carbon Fuels Infrastructure Investment Initiative (SUMMARY Categorical Exclusion) CX(s) Applied: B5.22 Date: 06/27/2013 Location(s): California Offices(s): National Energy Technology Laboratory http://energy.gov/nepa/downloads/cx-010896-categorical-exclusion-determination

353

Bright Lights and Even Brighter Ideas | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Bright Lights and Even Brighter Ideas Bright Lights and Even Brighter Ideas Bright Lights and Even Brighter Ideas July 3, 2013 - 2:04pm Addthis Kim Kisslinger, a researcher at Brookhaven Lab's Center for Functional Nanomaterials seen here with a focused-ion beam instrument, reduced the indium gallium nitride (InGaN) samples to a thickness of just 20 nanometers to prepare them for electron microscopy. | Photo courtesy of Brookhaven National Laboratory. Kim Kisslinger, a researcher at Brookhaven Lab's Center for Functional Nanomaterials seen here with a focused-ion beam instrument, reduced the indium gallium nitride (InGaN) samples to a thickness of just 20 nanometers to prepare them for electron microscopy. | Photo courtesy of Brookhaven National Laboratory. Charles Rousseaux Charles Rousseaux

354

Concerning the energy levels of silver in Ge-Si alloys  

SciTech Connect (OSTI)

The emission from impurity states of silver (an element of the IB subgroup) in a Ge-Si alloy, containing 18 at % Si, has been studied. The donor level of silver has been found in crystals doubly doped with gallium and silver, while its first acceptor level has been revealed in crystals doped with only silver. Single crystals were grown by pulling from a melt using a feeding rod. Doping with gallium was performed by introducing this element into the feeding rod, and silver was introduced into the crystals via diffusion. The positions of the donor and first acceptor Ag levels with respect to the top of the valence band were found by analyzing the temperature dependence of the Hall coefficient and the electroneutrality equation for the crystal: 0.06 and 0.29 eV, respectively.

Tahirov, V. I. [Baku State University (Azerbaijan); Agamaliev, Z. A. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Sadixova, S. R.; Guliev, A. F.; Gahramanov, N. F., E-mail: n_gakhramanov@mail.ru [Sumgait State University (Azerbaijan)

2012-03-15T23:59:59.000Z

355

Low Energy Solar Neutrinos and Spin Flavour Precession  

E-Print Network [OSTI]

The possibility that the Gallium data effectively indicates a time modulation of the solar active neutrino flux in possible connection to solar activity is examined on the light of spin flavour precession to sterile neutrinos as a subdominant process in addition to oscillations. We distinguish two sets of Gallium data, relating them to high and low solar activity. Such modulation affects principally the low energy neutrinos ($pp$ and $^7 Be$) so that the effect, if it exists, will become most clear in the forthcoming Borexino and LENS experiments and will provide evidence for a neutrino magnetic moment. Using a model previously developed, we perform two separate fits in relation to low and high activity periods to all solar neutrino data. These fits include the very recent charged current spectrum from the SNO experiment. We also derive the model predictions for Borexino and LENS experiments.

Bhag C. Chauhan; Joao Pulido; R. S. Raghavan

2005-04-08T23:59:59.000Z

356

Ga configurations in hydrogenated amorphous silicon as studied by x-ray photoemission spectroscopy  

Science Journals Connector (OSTI)

Samples of crystalline silicon and glow-discharge-deposited hydrogenated amorphous silicon were doped with gallium by low-energy (4-keV) ion implantation. X-ray photoemission spectroscopy was used to study the chemical-bonding states of the Ga. From Ga 3d core-level studies, we found that elementary interstitial, threefold-coordinated, and fourfold-coordinated Ga coexist in the ion-implanted and annealed amorphous silicon network. The percentage of activated threefold- and fourfold-coordinated Ga atoms is found to increase with increasing annealing temperature, prior to crystallization. The energy released by the amorphous silicon lattice upon annealing contributes to the activation of the gallium from the elementary state to the threefold- or fourfold-coordinated state. No evidence of Ga-H bond formation is found. The percentage of fourfold-coordinated Ga, which we call the doping efficiency, ranges from 5% to 10%, depending upon the thermal treatment.

Z. H. Lu; S. Poulin-Dandurand; E. Sacher; A. Yelon

1990-09-15T23:59:59.000Z

357

Surface and interfacial reaction study of half cycle atomic layer deposited HfO{sub 2} on chemically treated GaSb surfaces  

SciTech Connect (OSTI)

An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (XPS) study was conducted in order to investigate the evolution of the HfO{sub 2} dielectric interface with GaSb(100) surfaces after sulfur passivation and HCl etching, designed to remove the native oxides. With the first pulses of tetrakis(dimethylamido)hafnium(IV) and water, a decrease in the concentration of antimony oxide states present on the HCl-etched surface is observed, while antimony sulfur states diminished below the XPS detection limit on sulfur passivated surface. An increase in the amount of gallium oxide/sulfide is seen, suggesting oxygen or sulfur transfers from antimony to gallium during antimony oxides/sulfides decomposition.

Zhernokletov, D. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Dong, H.; Brennan, B.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Yakimov, M.; Tokranov, V.; Oktyabrsky, S. [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States)] [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States); Wallace, R. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2013-04-01T23:59:59.000Z

358

Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells  

DOE Patents [OSTI]

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO); Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

1998-03-24T23:59:59.000Z

359

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

360

Kinetics of GaAs Dissolution in H2O2?NH4OH?H2O Solutions  

Science Journals Connector (OSTI)

Gallium arsenide and other group III?V semiconductors have found numerous applications in the electronics industry because of such characteristics as the direct band gap and higher electron mobility, which make them more suitable than silicon in the fabrication of optoelectronic and high-frequency devices. ... For example, the solubilities of both As2O3 and As2O5 in water increase between 15 and 40 °C (Perry and Phillips, 1995), while Ga2O3 and Ga(OH)3 are insoluble in water and no data are available on the temperature dependence of their solubility at higher pH. ... Both Sheka et al. (1966) and Sidgwick (1950) confirm that gallium hydroxides are particularly soluble in NH4OH. ...

Christine Bryce; Dimitrios Berk

1996-12-04T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Development of electrochemical photovoltaic cells. Third technical progress report, November 1, 1979-January 31, 1980  

SciTech Connect (OSTI)

The development of stable, efficient, electrochemical photovoltaic cells based on silicon and gallium arsenide in non-aqueous electrolyte systems is being investigated. The effect of surface condition of silicon electrodes on electrochemical and physical characteristics has been studied. An electrode-supporting electrolyte interaction in acetonitrile has been identified which leads to etching of the surface. Improved performance can result, which has practical significance. Gallium arsenide electrodes have been electrochemically characterized in cells containing propylene carbonate with a ferrocene/ferricenium redox additive. Degradation of the ferricenium salt under illumination has been investigated. Other redox couples studied to date have not given promising results. Long-term stability experiments have been deferred while a better understanding of electrode behavior is being obtained.

Byker, H.J.; Schwerzel, R.E.; Wood, V.E.; Austin, A.E.; Brooman, E.W.

1980-03-07T23:59:59.000Z

362

GaN-nanowire/amorphous-Si core-shell heterojunction diodes  

Science Journals Connector (OSTI)

We report the electrical characterization of gallium-nitride/amorphous-silicon ( n -type nanowire/ p -type shell) diodesfabricated by postgrowth silicon shell formation technique. The n -type (unintentionally doped) gallium-nitride (GaN)nanowires were aligned on prepatterned sapphire substrates using dielectrophoresis. The amorphous silicon ( a -Si ) shell was deposited using plasma enhanced chemical vapor deposition technique and doped using spin-on boron dopant. Using photolithography plasma etching and metal deposition complete p - n ( p -type a -Si shell on n -type GaNnanowire)heterojunctiondiodes were developed. These diodes had reliable electrical characteristics with 1 V forward turn-on voltage. These nanowire core-shell heterojunctiondiodes exhibited negative differential resistance which can be explained by phonon-assisted interband tunneling mechanism.

Abhishek Motayed; Albert V. Davydov

2008-01-01T23:59:59.000Z

363

Multifilamentary Nb-Hf/Cu-Sn-Ga composite wires  

SciTech Connect (OSTI)

This paper reports the procedure for the simultaneous addition of hafnium to the core and gallium to the matrix of the composite-processed multifilamentary Nb/sub 3/Sn superconductors and the effect of this addition on the high-field superconducting properties of the alloy. Specifications for the samples are given; a four-probe resistive method was used to measure their critical temperature and critical current. The strain dependence of the critical current was measured using an apparatus designed to apply a tensile strain, a current, and a perpendicular magnetic field at the same time to short wire samples at 4.2 K. Metallographic studies demonstrated that niobium-hafnium cores with hafnium content up to 5 at .% showed good workability. The simultaneous addition of hafnium to the core and gallium to the matrix increased the critical temperature by 0.4 to 0.6 K and also significantly improved the critical current density in high fields.

Kamata, K.; Alhara, K.; Sekine, H.; Tachikawa, K.

1982-01-01T23:59:59.000Z

364

Modeling and simulation of CuIn{sub 1?x}Ga{sub x}Se{sub 2} based thin film solar cell  

SciTech Connect (OSTI)

In this work, CIGS (Copper Indium Gallium Diselenide) based solar cell structure has been simulated. We have been calculated short circuit current, open circuit voltage and efficiency of the cell. The thickness of the absorption layer is varied from 400 to 3000 nm, keeping the thickness of other layers unchanged. The effect of absorption layer thickness over cell performance has been analyzed and found that the efficiency increases upto 22% until the thickness of the absorption layer reaches around 2000 nm.

Kumari, S., E-mail: sarita.kumari132@gmail.com; Verma, A. S. [Department of Physics, Banasthali University, Rajasthan-304022 (India); Singh, P.; Gautam, R. [Department of Electronics and Communication, Krishna Institute of Engg. and Tech., Ghaziabad-201206 (India)

2014-04-24T23:59:59.000Z

365

NREL Spurred the Success of Multijunction Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Many scientists once believed that high-quality gallium indium phosphide (GaInP) alloys could not be grown for use as semiconductors because the alloys would separate. However, researchers at the National Renewable Energy Laboratory (NREL) thought differently, and they employed GaInP in a material combination that allowed the multijunction cell to flourish. The multijunction cell is now the workhorse that powers satellites and the catalyst for renewed interest in concentrator photovoltaic products.

Not Available

2013-08-01T23:59:59.000Z

366

Two dimensional metallic photonic crystals for light trapping and anti-reflective coatings in thermophotovoltaic applications  

SciTech Connect (OSTI)

We report the development of a front-side contact design for thermophotovoltaics that utilizes metallic photonic crystals (PhCs). While this front-side grid replacement covers more surface area of the semiconductor, a higher percentage of photons is shown to be converted to usable power in the photodiode. This leads to a 30% increase in the short-circuit current of the gallium antimonide thermophotovoltaic cell.

Shemelya, Corey; DeMeo, Dante F.; Vandervelde, Thomas E. [The Renewable Energy and Applied Photonics Laboratories, Electrical and Computer Engineering, Tufts University, Medford, Massachusetts 02155 (United States)

2014-01-13T23:59:59.000Z

367

NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

Not Available

2012-09-01T23:59:59.000Z

368

Radiopharmaceuticals for imaging the heart  

DOE Patents [OSTI]

Radiopharmaceuticals for imaging myocardial tissues are prepared by forming lipophilic, cationic complexes of radioactive metal ions with metal chelating ligands comprising the Schiff base adducts of triamines and tetraamines with optionally substituted salicylaldehydes. The lipophilic, cationic, radioactive complexes of the invention exhibit high uptake and retention in myocardial tissues. Preferred gallium-68(III) complexes in accordance with this invention can be used to image the heart using positron emission tomography. 6 figures.

Green, M.A.; Tsang, B.W.

1994-06-28T23:59:59.000Z

369

Radiopharmaceuticals for imaging the heart  

DOE Patents [OSTI]

Radiopharmaceuticals for imaging myocardial tissues are prepared by forming lipophilic, cationic complexes of radioactive metal ions with metal chelating ligands comprising the Schiff base adducts of triamines and tetraamines with optionally substituted salicylaldehydes. The lipophilic, cationic, radioactive complexes of the invention exhibit high uptake and retention in myocardial tissues. Preferred gallium-68(III) complexes in accordance with this invention can be used to image the heart using positron emission tomography.

Green, Mark A. (West Lafayette, IN); Tsang, Brenda W. (Lafayette, IN)

1994-01-01T23:59:59.000Z

370

Growth of 5 mm GaN Single Crystals at 750 °C from an Na?Ga Melt  

Science Journals Connector (OSTI)

Laser diodes using GaN-based III?V nitrides have been developed, and nitride semiconductor devices are now of considerable interest. ... When the inclusions were exposed to air, they reacted with water vapor in air and produced sodium hydroxide and small gallium metal droplets at the fracture surface of the crystal. ... The solubility of nitrogen in liquid sodium is extremely low (7.1 × 10-9 mol % N at 600 °C). ...

Masato Aoki; Hisanori Yamane; Masahiko Shimada; Seiji Sarayama; Francis J. DiSalvo

2001-02-03T23:59:59.000Z

371

Loss of Siloxane Monolayers from GaN Surfaces in Water  

Science Journals Connector (OSTI)

Gallium nitride, with a thin passivating layer of Ga2O3, has been functionalized with octadecyltrichlorosilane (OTS) and aminopropyltriethoxysilane (APTES) self-assembled monolayers (SAMs). ... Repeat solubility tests have shown that the time necessary for complete loss of an OTS SAM in pH 7 buffer can vary from 1 to 24 h. ... The powder was found to be soluble in both water and buffer at around 1–10 ppm. ...

Christina Arisio; Catherine A. Cassou; Marya Lieberman

2013-03-27T23:59:59.000Z

372

Nuclear fuels technologies fiscal year 1998 research and development test plan  

SciTech Connect (OSTI)

A number of research and development (R and D) activities are planned at Los Alamos National Laboratory (LANL) in FY98 in support of the Department of Energy Office of Fissile Materials Disposition (DOE-MD). During the past few years, the ability to fabricate mixed oxide (MOX) nuclear fuel using surplus-weapons plutonium has been researched, and various experiments have been performed. This research effort will be continued in FY98 to support further development of the technology required for MOX fuel fabrication for reactor-based plutonium disposition. R and D activities for FY98 have been divided into four major areas: (1) feed qualification/supply, (2) fuel fabrication development, (3) analytical methods development, and (4) gallium removal. Feed qualification and supply activities encompass those associated with the production of both PuO{sub 2} and UO{sub 2} feed materials. Fuel fabrication development efforts include studies with a new UO{sub 2} feed material, alternate sources of PuO{sub 2}, and determining the effects of gallium on the sintering process. The intent of analytical methods development is to upgrade and improve several analytical measurement techniques in support of other R and D and test fuel fabrication tasks. Finally, the purpose of the gallium removal system activity is to develop and integrate a gallium removal system into the Pit Disassembly and Conversion Facility (PDCF) design and the Phase 2 Advanced Recovery and Integrated Extraction System (ARIES) demonstration line. These four activities will be coordinated and integrated appropriately so that they benefit the Fissile Materials Disposition Program. This plan describes the activities that will occur in FY98 and presents the schedule and milestones for these activities.

Alberstein, D.; Blair, H.T.; Buksa, J.J. [and others

1998-06-01T23:59:59.000Z

373

Compositional Mapping of Self-Assembled Monolayers Derivatized within Microfluidic Networks  

Science Journals Connector (OSTI)

Carboxylic acid terminated self-assembled monolayers (SAMs) deposited on epitaxial gold substrates were activated in situ using a water-soluble carbodiimide and N-hydroxysuccinimide reagents. ... 20,32 The master template was available in our laboratory having been previously manufactured by exposing and developing a photoresist pattern on a gallium arsenide wafer. ... Images were obtained in lateral force and pulsed force modes using Topometrix silicon nitride (Si3N4) tips in air. ...

Steven J. Hinder; Simon D. Connell; Martyn C. Davies; Clive J. Roberts; Saul J. B. Tendler; Philip M. Williams

2002-03-19T23:59:59.000Z

374

Mesosynthesis of ZnO?Silica Composites for Methanol Nanocatalysis  

Science Journals Connector (OSTI)

5 Mesoporous silica materials mostly of the MCM-41-type hosting polymers,6 noble metals,7 and semiconductors such as gallium nitride8 have been prepared successfully. ... 29,30 These precursors are characterized by low thermolysis temperatures and high solubility in aprotic solvents. ... Because the porous silica materials were carefully dried in a vacuum at 150 °C for 24 h, it is rather unlikely that this hydrolysis results from water adsorbed in the pore system. ...

S. Polarz; F. Neues; M. W. E. van den Berg; W. Grünert; L. Khodeir

2005-08-06T23:59:59.000Z

375

Synthesis and Characterization of Anionic and Cationic Poly(ferrocenylsilane) Polyelectrolytes  

Science Journals Connector (OSTI)

5 Thin films of such block copolymers, e.g., poly(ferrocenyldimethylsilane-block-isoprene), can serve as self-assembling templates, enabling nanometer-sized patterns to be transferred directly into silicon or silicon nitride substrates by reactive ion etching. ... Transition temperatures were calibrated using cyclohexane, gallium, and indium standards. ... (29)?The solubility of 5 in water decreases above pH 7, while 8 becomes less soluble at pH < 6. ...

Mark A. Hempenius; Fabiane F. Brito; G. Julius Vancso

2003-07-30T23:59:59.000Z

376

Hard and Soft X-ray Absorption Spectroscopic Investigation of Aqueous Fe(III)?Hydroxamate Siderophore Complexes  

Science Journals Connector (OSTI)

19 The atmospheric pressure was maintained inside the sample chamber by placing a 0.16 ?m silicon nitride window between the sample chamber and upstream ultrahigh vacuum environment. ... The absorption spectra were recorded by detecting sample fluorescence (F) using a gallium arsenide photodiode (Hamamatsu Corporation). ... In aqueous solutions, the solubility of Fe(III) is extremely low close to neutral pH and the Fe(III) concentration increases in acidic and alkaline solutions (Figure 2). ...

David C. Edwards; Satish C. B. Myneni

2005-10-21T23:59:59.000Z

377

Electronic structure of [Ga2(tren)2(CAsq,cat )](BPh4)2(BF4): An EPR, ENDOR, and  

E-Print Network [OSTI]

Electronic structure of [Ga2(tren)2(CAsq,cat )](BPh4)2(BF4): An EPR, ENDOR, and density functional. Keywords: EPR ENDOR Semiquinone Gallium Spin exchange DFT a b s t r a c t The bimetallic [M1M2(tren)2(CAn)2(CAsq,cat )]3+ . This report deals with the interpretation of the EPR and ENDOR spectra of [Ga2

McCusker, James K.

378

Block Copolymer Templated Chemistry for the Formation of Metallic Nanoparticle Arrays on Semiconductor Surfaces  

Science Journals Connector (OSTI)

One of key ingredients for many future applications is the ability to precisely pattern nanoscale features on technologically relevant semiconductor surfaces such as silicon and germanium, as well as compound semiconductors such as gallium arsenide and indium phosphide. ... Deposition of these metals is possible presumably due to the water solubility of their oxides:? Ge oxide,14c As oxide,24 and P oxide25 are soluble in water. ...

Masato Aizawa; Jillian M. Buriak

2007-09-25T23:59:59.000Z

379

Growth of ?-Amyloid(1?40) Protofibrils by Monomer Elongation and Lateral Association. Characterization of Distinct Products by Light Scattering and Atomic Force Microscopy  

Science Journals Connector (OSTI)

Soluble intermediates in A? fibrillogenesis, termed protofibrils, have been identified previously, and here we describe the in vitro formation and isolation of A?(1?40) protofibrils by size exclusion chromatography. ... Hydrodynamic radius (RH) measurements were made at room temperature with a DynaPro MSX instrument (Protein Solutions Inc., Charlottesville, VA) containing a gallium aluminum arsenide laser. ... The solubility of A?(1?43) in water was substantially decreased by addition of buffered NaCl (60). ...

Michael R. Nichols; Melissa A. Moss; Dana Kim Reed; Wen-Lang Lin; Rajendrani Mukhopadhyay; Jan H. Hoh; Terrone L. Rosenberry

2002-04-17T23:59:59.000Z

380

High-efficiency solar cell and method for fabrication  

DOE Patents [OSTI]

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

Hou, Hong Q. (Albuquerque, NM); Reinhardt, Kitt C. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

High-efficiency solar cell and method for fabrication  

DOE Patents [OSTI]

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.

Hou, H.Q.; Reinhardt, K.C.

1999-08-31T23:59:59.000Z

382

Ga-MCM-41 synthesis and catalytic activity in the liquid-phase isomerisation of ?-pinene  

Science Journals Connector (OSTI)

A procedure to synthesize Ga-MCM-41 materials, using gallium nitrate and tetraethyl orthosilicate (TEOS) as gallium and silica sources, respectively, is reported. Samples were synthesized with a silica/gallium ratio of 40, 30, 20 and 10 and subsequently characterised by XRD, N2 adsorption, SEM, DRIFT measurements and acid properties as surface acidity using pyridine (PY) and 2,6-dimethylpyridine (DMPY) as probe molecules, as well as, \\{DRIFTs\\} of absorbed pyridine in gas phase. Materials were tested in the liquid-phase-?-pinene isomerisation reaction. According to the literature, the isomerisation proceeds via two parallel and competing pathways, one yielding monocyclic products and the other yielding polycyclic products depending on the catalysts acid strength. Camphene and limonene were obtained as major products. Camphene and polycyclic products are formed in weak (Lewis acid sites) whereas stronger (Bronsted) acid sites resulted in limonene and monocyclic derivatives. Materials exhibited an interesting catalytic activity in terms of conversion and selectivity to camphene and limonene under mild reaction conditions (353 K). The highest conversion values (around 60–70%) were achieved after 1 h of reaction and further reaction times did not seem to increase, significantly, the materials activity.

Rafael Luque; Juan Manuel Campelo; Tomas David Conesa; Diego Luna; Jose Maria Marinas; Antonio Angel Romero

2007-01-01T23:59:59.000Z

383

Composition and crystallinity in electrochemically deposited magnetostrictive galfenol (FeGa)  

SciTech Connect (OSTI)

Here, we report the first measurements of magnetostriction as a function of composition for electrodeposited iron-gallium alloys, also known as galfenol. Galfenol is an exciting material due to its large magnetostriction constant (up to 400 ppm) and robust mechanical properties. A wide range of sensors, actuators, and other transducers can be fabricated by taking advantage of galfenol's unique mix of magnetic and mechanical properties. Electrodeposition allows galfenol to be easily integrated into a variety of applications, such as toque sensors with conformal, monolithic active layers. In this work, we examine the underlying factors that influence magnetostriction in electrodeposited galfenol, including crystallinity and composition. Here, we have controlled the film composition, as measured by energy dispersive x-ray spectroscopy, over the range of 5–25% gallium using a single plating bath by varying deposition parameters. This composition range corresponds to the region of largest expected magnetostriction for iron gallium alloys. However, our measured magnetostriction values were significantly lower than the values for single crystal galfenol from literature. The electrodeposited films in this work appeared polycrystalline when measured using x-ray diffraction. When the texture of the film is taken into account, the magnetostriction results closely matched the predicted values. These results show that it is possible to achieve magnetostrictive galfenol thin films over a wide range of compositions using electrodeposition.

Estrine, Eliot C., E-mail: estr0042@umn.edu; Hein, Matt; Robbins, William P.; Stadler, Bethanie J. H. [Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

2014-05-07T23:59:59.000Z

384

Nuclear Medicine Program progress report for quarter ending June 30, 1991  

SciTech Connect (OSTI)

In this report the excitation functions for production of gallium-66 via {alpha}-induced nuclear reactions on enriched zinc-66 have been measured with E{sub {alpha}}{le}27.3 Mev and E{sub {alpha}}{le}43.7 MeV employing the stack thin-target technique. In addition, the induced activity of gallium-67 in the same sets of targets allowed an evaluation of the excitation functions of the corresponding nuclear reactions. These preliminary studies have demonstrated that sufficient levels of gallium-66 can be produced by {alpha}-induced reactions on enriched zinc targets. A series of radioiodinated analogues of 1-azabicyclo(2.2.2)oct-3-yl {alpha}-hydroxy-{alpha}, {alpha}-diphenylacetate (QNB) have been prepared. These new analogues include 1-azabicyclo-(2.2.2)oct-3-yl{alpha}-hydroxy-{alpha}-(4-iodophenyl)-{alpha}-methylacetate(2,I-WNA), 1-azabicyclo(2.2.2)oct-3-yl (3-iodo)-xanthene-9-carboxylate (3,I-QNX), and 1-azabicyclo(2.2.2)oct-3-yl {alpha}-hydroxy-{alpha}-(E-1-iodo-1-propen-3-yl)-{alpha}-phenylacetate (4,I-QNP), which have also been radiolabeled with iodine-125 with high specific activity. The biodistribution, brain uptake, and receptor specificity of these new analogues are currently being studied. Shipments of radioactive agents made to collaborators during this period included. One shipment of iodine-125-labeled 15-(p-iodophenyl)-3-R,S-methylpentadecanoic acid (BMIPP) and tungsten-188/rhenium-188 generator. 16 refs., 7 figs., 1 tab.

Knapp, F.F. Jr.; Ambrose, K.R.; Callahan, A.P.; McPherson, D.W.; Mirzadeh, S.; Srivastava, P.C.; Hasan, A.; Lambert, C.R.; Lambert, S.J.; Rice, D.E.

1991-09-01T23:59:59.000Z

385

Argonne CNM Highlight: Superhydrophobicity on Silver Nanoplates  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Superhydrophobicity on Silver Nanoplates Superhydrophobicity on Silver Nanoplates Superhydrophobic silver nanoplates Representations of water droplets on a GaAs substrate covered with the Ag nanoplates; as featured on back cover of the journal issue Gallium arsenide wafers decorated with silver nanoplates result in composite surfaces of varying hydrophobocity. CNM researchers and collaborators at Clemson have accomplished this in part by coating the silver nanoplates with self-assembled monolayers of alkyl thiol molecules. By carefully controlling reaction conditions, the size, thickness, and surface roughness of the individual silver nanoplates are tuned to produce different topographic structures and roughness of the composite surfaces. This in turn influences the surface hydrophobicity. The composite surfaces

386

Definition: Photovoltaics | Open Energy Information  

Open Energy Info (EERE)

Photovoltaics Photovoltaics Jump to: navigation, search Dictionary.png Photovoltaics Pertaining to the direct conversion of light into electricity[1][2] View on Wikipedia Wikipedia Definition Photovoltaics (PV) is a method of generating electrical power by converting solar radiation into direct current electricity using semiconductors that exhibit the photovoltaic effect. Photovoltaic power generation employs solar panels composed of a number of solar cells containing a photovoltaic material. Materials presently used for photovoltaics include monocrystalline silicon, polycrystalline silicon, amorphous silicon, cadmium telluride, and copper indium gallium selenide/sulfide. Due to the increased demand for renewable energy sources, the manufacturing of solar cells and photovoltaic arrays has advanced

387

NREL: Photovoltaics Research - Engineering  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Photovoltaic Engineering Photovoltaic Engineering Photovoltaic (PV) Engineering at NREL supports commercial and emerging PV technology development. Our support covers the following three areas: Engineering Testing and Evaluation. We provide engineering testing and evaluation of PV products developed by companies during work sponsored by the U.S. Department of Energy (DOE). We determine if products meet performance criteria established by DOE for a company's contractual obligations. Standards Development. We support the development of national and international standards. Current work includes investigating methods of preconditioning cadmium telluride and copper indium gallium diselenide PV modules so that when they are tested for reporting conditions, the results are correlated with subsequent field measurements.

388

Power Electronics Reliability Kick Off Meeting … Silicon Power Corp. & Sandia Labs  

Broader source: Energy.gov (indexed) [DOE]

Reliability Reliability 2010 Update Conference - DOE ESS Program November 4, 2010 Mark A. Smith - Systems Readiness & Sustainment Technologies Robert Kaplar, Matthew Marinella, Reinhard Brock, James Stanley, and Michael King - Radiation Hard CMOS Technology Stan Atcitty - Energy Infrastructure and Distributed Energy Resources Sandia National Laboratories Thanks to Dr. Imre Gyuk for supporting this work. Project Goals * Use experiments and modeling to investigate and characterize stress-related failure modes of post-silicon power electronic (PE) devices such as silicon carbide (SiC) and gallium nitride (GaN) switches. * Seek opportunities for condition monitoring (CM) and prognostics and health management (PHM) to further enhance the reliability of power electronics devices and equipment.

389

Vehicle Technologies Office: Power Electronics  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Power Electronics Power Electronics The power electronics activity focuses on research and development (R&D) for flexible, integrated, modular power electronics for power conditioning and control, including a power switch stage capable of running a variety of motors and loads. Efforts are underway to reduce overall system costs for these vehicles through the elimination of additional cooling loops to keep the power electronics within their safe operation ranges. These challenges are being met within the program through research in: Silicon carbide and Gallium Nitride semiconductors, which can be operated at much higher temperatures than current silicon semiconductors; Packaging innovations for higher temperature operation; Improved thermal control technologies; and

390

Improved method of preparing p-i-n junctions in amorphous silicon semiconductors  

DOE Patents [OSTI]

A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

Madan, A.

1984-12-10T23:59:59.000Z

391

Doping Characteristics of Gas-Source MBE-Grown n-AlxGa1-xAs (x=0-0.28) Doped Using Disilane  

Science Journals Connector (OSTI)

Si doping using uncracked disilane (Si2H6) in gas-source molecular beam epitaxy of n-AlxGa1-xAs (x=0-0.28) using triethyl gallium, triethyl aluminum, and arsine was studied in a carrier concentration from 5 ? 1017 to 2 ? 1018 cm-3. We found that (1) the Si atomic concentration of AlGaAs is proportional to the Si2H6 flow rate, and decreases with increasing Al content at a constant Si2H6 flow rate, and (2) the carrier concentration of AlGaAs shows a square-root dependence on the Si atomic concentration incorporated.

Toshio Fujii; Adarsh Sandhu; Hideyasu Ando; Yuji Kataoka; Hideaki Ishikawa

1990-01-01T23:59:59.000Z

392

Magnetorotational Instability in a Rotating Liquid Metal Annulus  

E-Print Network [OSTI]

Although the magnetorotational instability (MRI) has been widely accepted as a powerful accretion mechanism in magnetized accretion disks, it has not been realized in the laboratory. The possibility of studying MRI in a rotating liquid-metal annulus (Couette flow) is explored by local and global stability analysis and magnetohydrodynamic (MHD) simulations. Stability diagrams are drawn in dimensionless parameters, and also in terms of the angular velocities at the inner and outer cylinders. It is shown that MRI can be triggered in a moderately rapidly rotating table-top apparatus, using easy-to-handle metals such as gallium. Practical issues of this proposed experiment are discussed.

Ji, H; Kageyama, A; Ji, Hantao; Goodman, Jeremy; Kageyama, Akira

2001-01-01T23:59:59.000Z

393

Magnetorotational Instability in a Rotating Liquid Metal Annulus  

E-Print Network [OSTI]

Although the magnetorotational instability (MRI) has been widely accepted as a powerful accretion mechanism in magnetized accretion disks, it has not been realized in the laboratory. The possibility of studying MRI in a rotating liquid-metal annulus (Couette flow) is explored by local and global stability analysis and magnetohydrodynamic (MHD) simulations. Stability diagrams are drawn in dimensionless parameters, and also in terms of the angular velocities at the inner and outer cylinders. It is shown that MRI can be triggered in a moderately rapidly rotating table-top apparatus, using easy-to-handle metals such as gallium. Practical issues of this proposed experiment are discussed.

Hantao Ji; Jeremy Goodman; Akira Kageyama

2001-03-14T23:59:59.000Z

394

Magnetorotational Instability in a Rotating Liquid Metal Annulus  

SciTech Connect (OSTI)

Although the magnetorotational instability (MRI) has been widely accepted as a powerful accretion mechanism in magnetized accretion disks, it has not been realized in the laboratory. The possibility of studying MRI in a rotating liquid-metal annulus (Couette flow) is explored by local and global stability analysis and magnetohydrodynamic (MHD) simulations. Stability diagrams are drawn in dimensionless parameters, and also in terms of the angular velocities at the inner and outer cylinders. It is shown that MRI can be triggered in a moderately rapidly rotating table-top apparatus, using easy-to-handle metals such as gallium. Practical issues of this proposed experiment are discussed.

Hantao Ji; Jeremy Goodman; Akira Kageyama

2001-03-10T23:59:59.000Z

395

Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector  

SciTech Connect (OSTI)

This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

Smith, Richard J.; Light, Roger A.; Johnston, Nicholas S.; Pitter, Mark C.; Somekh, Mike G. [Institute of Biophysics, Imaging and Optical Science, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom); Sharples, Steve D. [Applied Optics Group, Electrical Systems and Optics Research Division, University of Nottingham, Nottinghamshire NG7 2RD (United Kingdom)

2010-02-15T23:59:59.000Z

396

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

397

Optoelectronic simulation of GaAs solar cells with angularly selective filters  

SciTech Connect (OSTI)

We discuss the influence of angularly selective filters on thin film gallium arsenide solar cells. For this reason, the detailed balance model was refined to fit our needs with respect to Auger recombination, reflection, transmission, and realistic absorption. For calculating real systems, an approach was made to include optical effects of angularly selective filters into electron-hole dynamic equations implemented in PC1D, a one dimensional solar cell calculation tool. With this approach, we find a relative V{sub oc} increase of 5% for an idealized 100?nm GaAs cell, including Auger recombination.

Kraus, Tobias, E-mail: tobias.kraus@ise.fraunhofer.de; Höhn, Oliver; Hauser, Hubert; Bläsi, Benedikt [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany)

2014-02-07T23:59:59.000Z

398

Chemical and Electrochemical Differences in Nonaqueous Li–O2 and Na–O2 Batteries  

Science Journals Connector (OSTI)

The most intriguing difference between the two batteries is their respective galvanostatic charging overpotentials: a Na–O2 battery exhibits a low overpotential throughout most of its charge, whereas a Li–O2 battery has a low initial overpotential that continuously increases to very high voltages by the end of charge. ... Li metal was purchased from FMC, Na metal was purchased from GalliumSource, P50 Avcarb carbon paper was purchased from the Fuel Cell Store, and Whatman glass fiber filters (QM-A grade) were used as the separator. ...

Bryan D. McCloskey; Jeannette M. Garcia; Alan C. Luntz

2014-03-17T23:59:59.000Z

399

Formation of Smooth, Conformal Molecular Layers on ZnO Surfaces via Photochemical Grafting  

Science Journals Connector (OSTI)

While the surface chemistry of bulk single crystals of ZnO has been explored in some detail, these studies focused almost exclusively on small molecules in ultrahigh vacuum,(29-33) where the absence of water and associated solvation may substantially alter reactivity. ... (36-40) Recently this method has also been extended to ionic semiconductors to form stable, functional layers on gallium nitride(41) and titanium dioxide. ... For example, hydrophobic or hydrophilic ligands can control wetting and solubility properties, while functional groups such as amines can be used for subsequent covalent chemistry. ...

Rose E. Ruther; Ryan Franking; Alex M. Huhn; Jaritza Gomez-Zayas; Robert J. Hamers

2011-07-21T23:59:59.000Z

400

Double dielectric passivation layer on InAs  

E-Print Network [OSTI]

-integration and fabrication difficulties of Josephson junctions appear to be insurmountable in the near future. This led to an increased interest in gallium arsenide (GaAs) devices like the high-electron mobility transistor (HEMT) and the modulation-doped field effect..., the thermodynamic stabilities of the A 0 and B 0 oxides, and the mutual solubilities of the oxides are of importance [10). Unfortunately neither the diffusion rates of the elements through the oxide nor the mutual solubilities of the oxides are known...

Egley, James Lee

2012-06-07T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

The vanadyl complex of N,N'-bis(2-mercaptoethyl)-1, 5-diazacyclooctane  

E-Print Network [OSTI]

lighter green band occasionally remains at the top of the column or smears 18 part way down. However, this does not seem to affect the purity of the (bme-daco)VO eluted. (Bme-daco)VO is soluble in dichloromethane and sparingly soluble in alcohols... saturated solution of the complex in dichloromethane. N, N'-bis(2-mercaptoethyl)-1, 5-diazacyclooctane- chlorogallium(III), (bme-daco)GaCI. Gallium(III)chloride (0. 91 g, 5. 1 mmol) was dissolved in dry ethanol and transferred via cannula to a solution...

Hatley, Michelle Lynn

2012-06-07T23:59:59.000Z

402

Metal Nitride and Metal Carbide Nanoparticles by a Soft Urea Pathway  

Science Journals Connector (OSTI)

It also worth noting that in the presence of the metal precursors, the solubility of urea (or similar compounds) is significantly higher than in pure ethanol (4.877 g/100 g at 18.2 °C), which already indicates the formation of soluble complexes and coordination polymers. ... HRTEM shown well-developed lattice fringes, with d = 2.43 Å as interplanar distance, corresponding to the plane 101 of the hexagonal structures of gallium nitride (dcalcd = 2.43765 Å, ref ICDD-PDF4+ 01?089?7522). ... (Oxy)nitrides as new photocatalysts for water splitting under visible light irradiation ...

Cristina Giordano; Christian Erpen; Weitang Yao; Bettina Milke; Markus Antonietti

2009-10-07T23:59:59.000Z

403

Photoelectrochemical Processes at n-GaAs(100)/Aqueous HCl Electrolyte Interface: A Synchrotron Photoemission Spectroscopy Study of Emersed Electrodes  

Science Journals Connector (OSTI)

Processes occurring at the semiconductor/electrolyte interfaces are very complex and include interrelated ion adsorption, surface bond breaking (corrosion), as well as charge transfer from semiconductor conduction and valence bands to species in the solution for reduction and oxidation reactions, respectively. ... As the processing is ultraclean and has been integrated to the UHV system, even differences in the electronic structures could be derived. ... The processes of gallium chlorides and elemental arsenic formation are accelerated under irradiation with visible light, which clearly illustrates the participation of photo holes in the photoelectrochemical etching process. ...

Mikhail V. Lebedev; Wolfram Calvet; Thomas Mayer; Wolfram Jaegermann

2014-05-30T23:59:59.000Z

404

Characterization of Irradiated Starches by Using FT-Raman and FTIR Spectroscopy  

Science Journals Connector (OSTI)

Degradation of starch polymers resulting in decreased viscosity and increased water solubility, and increased acidity with increasing radiation doses are potential changes observed in irradiated starches. ... FT-Raman spectra were obtained using a Nicolet 870 spectrometer with the Raman module 32B (Madison, WI) and Nd:YAG laser operating at 1064 nm with a maximum power of 2 W. The system was equipped with an InGaAs (Indium?Gallium Arsenide) detector, XT-KBr beam-splitter with 180° reflective optics, and a fully motorized sample position adjustment feature. ...

Ramazan Kizil; Joseph Irudayaraj; Koushik Seetharaman

2002-06-07T23:59:59.000Z

405

Characterization of the Interface of Gold and Silver Nanostructures on InP and GaAs Synthesized via Galvanic Displacement  

Science Journals Connector (OSTI)

Galvanic displacement of noble metals on gallium arsenide to produce metal-GaAs junctions has been studied intermittently, starting with a report by Gol’derberg in 1971 of gold on GaAs. ... The presence of an acid is not necessary since Ga2O3 and As2O3 are somewhat water soluble (solubility of As2O3 > Ga2O3),(64, 65) although addition of 2% H2SO4(aq) resulted in greater gold deposition, particularly at the early stages of reaction (the first few minutes). ...

Sayed Y. Sayed; Brian Daly; Jillian M. Buriak

2008-07-23T23:59:59.000Z

406

Water-Soluble Complexes from Random Copolymer and Oppositely Charged Surfactant. 2. Complexes of Poly(ethylene glycol)-Based Cationic Random Copolymer and Bile Salts  

Science Journals Connector (OSTI)

Water-Soluble Complexes from Random Copolymer and Oppositely Charged Surfactant. 2. Complexes of Poly(ethylene glycol)-Based Cationic Random Copolymer and Bile Salts ... Measurements of light scattering intensity were performed at room temperature (22 °C) on a multiangle light scattering detector (DAWN EOS fitted with a Wyatt QELS correlator (Wyatt Technology Corp.)), having a 30 mW (GaAs, gallium arsenide) laser emitting vertically polarized light at wavelength ? = 690 nm. ... Turbidimetric titration was used to determine the solubility of the polymer?surfactant complexes of various compositions. ...

C. K. Nisha; Sunkara V. Manorama; Jayachandran N. Kizhakkedathu; Souvik Maiti

2004-08-28T23:59:59.000Z

407

Water-Soluble Complexes from Random Copolymer and Oppositely Charged Surfactant. 1. Complexes of Poly(ethylene glycol)-Based Cationic Random Copolymer and Sodium Dodecyl Sulfate  

Science Journals Connector (OSTI)

Water-Soluble Complexes from Random Copolymer and Oppositely Charged Surfactant. 1. Complexes of Poly(ethylene glycol)-Based Cationic Random Copolymer and Sodium Dodecyl Sulfate ... Preliminary studies on the solubility of the complexes by turbidity measurements with one of the most studied anionic surfactants, sodium dodecyl sulfate (SDS), demonstrate that complexes of the polymer with 68 mol % PEG content are insoluble in water. ... (angles are measured with respect to the direction of the laser beam) equipped with a 30 mW (GaAs, gallium arsenide) laser emitting vertically polarized light at wavelength ? = 690 nm. ...

C. K. Nisha; Pratyay Basak; Sunkara V. Manorama; Souvik Maiti; Kizhakkedathu N. Jayachandran

2003-02-26T23:59:59.000Z

408

Crystal Engineering Approach To Forming Cocrystals of Amine Hydrochlorides with Organic Acids. Molecular Complexes of Fluoxetine Hydrochloride with Benzoic, Succinic, and Fumaric Acids  

Science Journals Connector (OSTI)

Raman spectroscopic analyses were carried out on a Thermo Nicolet 960 spectrometer equipped with an indium gallium arsenide (InGaAs) detector. ... Fluoxetine hydrochloride and cocrystals 2 and 4 were stable in water at 20 °C such that the equilibrium solubility values could be obtained at this temperature (Table 7). ... Approximate solubilities in water are as follows:? benzoic acid, 0.34 g/100 g at 25 °C;18 succinic acid, 7.5 g/100 g at 25 °C;19 fumaric acid, 0.61 g/100 g at 25 °C. ...

Scott L. Childs; Leonard J. Chyall; Jeanette T. Dunlap; Valeriya N. Smolenskaya; Barbara C. Stahly; G. Patrick Stahly

2004-09-24T23:59:59.000Z

409

Soluble, Infrared-Absorbing Croconate Dyes from 2,6-Di-tert-butyl-4-methylchalcogenopyrylium Salts  

Science Journals Connector (OSTI)

1 Although many squarylium dyes have limited solubility in organic solvents or in coated organic films, squarylium dyes 1 (Chart 1) derived from 2,6-di-tert-butyl-4-methylchalcogenopyrylium salts (2)3 are soluble and have been coated in organic thin films for a variety of applications. ... The croconates are readily prepared, are soluble in organic solvents, and have absorption maxima that cover a broad range of laser emission lines from gallium?arsenide diode lasers (?820 nm) to the neodinium-YAG laser (1064 nm). ... The reaction mixture was poured into water (50 mL), and the product was extracted with hexanes (3 × 25 mL). ...

Todd P. Simard; Jian H. Yu; Jennifer M. Zebrowski-Young; Neil F. Haley; Michael R. Detty

2000-03-03T23:59:59.000Z

410

Fabrication of Semiconductors by Wet Chemical Etch  

E-Print Network [OSTI]

Arsenide. New York: John Wiley & Sons, Inc, 1994. CONCLUSIONS AND FUTURE WORK A selective wet etch process to re- move GaAs epitaxial cap layers from underlying InGaP layers has been de- veloped using a solution of H2SO4: H2O2:deionized water at a rate... the computing and electronics industries. Semiconducting materials, such as silicon, germanium, gallium ar- senide, and indium phosphide, are neither good insulators nor good con- ductors, but they have intrinsic electri- cal properties so that by controlled...

Francoviglia, Laura

2008-07-01T23:59:59.000Z

411

The Mechanism of Hydrogen Gas Evolution on GaAs Cathodes Elucidated by In Situ Infrared Spectroscopy  

Science Journals Connector (OSTI)

With n-type gallium arsenide, we present the first quantitative and dynamic study of hydrogen adsorption at a solid?liquid interface by in situ infrared spectroscopy in real time. ... The broadness of the signal may be accounted for in terms of interaction between As?H and water (see ref 22 for the analogous case of Si?H) and/or by the existence of distinct As?H sites at the surface. ... 55 One pH-dependent change in surface chemistry could be related to the solubility of oxidized arsenic. ...

B. H. Erné; F. Ozanam; J.-N. Chazalviel

1999-03-27T23:59:59.000Z

412

Fouling and Corrosion Properties of SiO2 Coatings on Copper in Geothermal Water  

Science Journals Connector (OSTI)

The main goal of this work was to explore the antifouling and anticorrosion characteristics of LPD-prepared low-energy inorganic SiO2 coatings on copper substrates with nanometer-scale film thicknesses in low- and medium-temperature geothermal waters, as no open literature could be found in this area. ... SiO2 films on substrates of Si wafer, glass, gallium arsenide, and SiGe, among others, have been successfully obtained with the LPD method. ... Stathoulopoulou, A.; Demadis, K. D.Enhancement of silicate solubility by use of “green” additives: Linking green chemistry and chemical water treatment Desalination 2008, 224, 223 ...

Chen Ning; Liu Mingyan; Zhou Weidong

2012-04-02T23:59:59.000Z

413

Synthesis of Metallic Nanostructures Using Chemical Fluid Deposition  

Science Journals Connector (OSTI)

Department of Chemical Engineering, and Department of Physics and Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China ... A solubility study of the platinum precursor, platinum(II) dimethylcyclooctadiene, in the supercritical carbon dioxide was carried out to obtain a phase diagram in order to optimize the operating parameters required for the metal deposition process. ... Korgel and Hanrath and co-workers had also published work on synthesizing nanowires of semiconducting materials, such as silicon, germanium, and gallium arsenide(22-25) using gold seeding particles. ...

Candy S. Lin; Frank Leung-Yuk Lam; Xijun Hu; Wing Yim Tam; Ka M. Ng

2008-06-18T23:59:59.000Z

414

Gain analysis of blue nitride-based lasers by small signal modulation  

Science Journals Connector (OSTI)

With a small signal frequency-modulation of the driving current the resonance frequency and the damping factor of the optical output power response of blue nitride-based ridge lasers grown on [0001]-plane gallium-nitride substrates were investigated with a network analyzer setup. From the linear dependence of the squared resonance frequency on the driving current the gain coefficients of the logarithmic gain model could be extracted being 7680 ? cm ? 1 for blue nitride-based lasers. For this purpose additional parameters such as the carrier density and the confinement factor were assigned by carrier lifetime and quantum efficiencymeasurements and one dimensional transfer matrix simulations respectively.

J. Müller; M. Scheubeck; M. Sabathil; G. Brüderl; D. Dini; S. Tautz; T. Lermer; A. Breidenassel; S. Lutgen

2010-01-01T23:59:59.000Z

415

Nuclear radiation detectors based on a matrix of ion-implanted p-i-n diodes on undoped GaAs epilayers  

SciTech Connect (OSTI)

Samples of nuclear detectors which represent matrices of p-i-n diodes were fabricated based on undoped gallium arsenide epitaxial layers by ion implantation technology. The detectors have a size of the active area of 0.4 Multiplication-Sign 0.4 and 0.9 Multiplication-Sign 0.9 cm{sup 2}. Electrical characteristics of fabricated detectors and results of measurements of fast neutrons spectra of {sup 241}Am-Be source by the recoil protons method are discussed.

Baryshnikov, F. M.; Britvich, G. I.; Chernykh, A. V.; Chernykh, S. V.; Chubenko, A. P.; Didenko, S. I.; Koltsov, G. I. [National University of Science and Technology 'MISIS', Leninskiy prospect 4, 119049 Moscow (Russian Federation); Institute for High Energy Physics, Polshhad nauki 1, 142281 Protvino (Russian Federation); National University of Science and Technology 'MISIS', Leninskiy prospect 4, 119049 Moscow (Russian Federation); P.N. Lebedev Physical Institute of the RAS, Leninskiy prospect 53, 119991 Moscow (Russian Federation); National University of Science and Technology 'MISIS', Leninskiy prospect 4, 119049 Moscow (Russian Federation)

2012-11-06T23:59:59.000Z

416

Method for producing Nb/sub 3/Sn superconductors  

SciTech Connect (OSTI)

In a method for producing an nb3sn superconductor which comprises elongating a composite composed of a core portion of an alloy containing niobium and a matrix portion of a copper-tin alloy, a copper-tin-aluminum alloy or a copper-tin-gallium alloy and heat-treating the elongated composite to form an nb3sn layer between the core portion and the matrix portion; the improvement wherein the core portion of the composite is made of a niobiumtitanium alloy containing 0.1 to 10 atomic percent of titanium.

Asano, T.; Tachikawa, K.; Takeuchi, T.

1983-05-31T23:59:59.000Z

417

Method for producing superconductors  

SciTech Connect (OSTI)

A method for producing a V3Al superconductor is disclosed which comprises making a composite composed of a sheath portion of a copper alloy containing 1 to 15 atomic percent of germanium, 1 to 15 atomic percent of silicon or 2 to 25 atomic percent of gallium and surrounded by the sheath portion, at least one core portion of a vanadium-aluminum alloy containing 0.5 to 20 atomic percent of aluminum; elongating the composite; and then heat-treating the elongated composite thereby to form a V3(Al, Ge), V3(Al, Si) or V3(Al, Ga) layer between the sheath portion and the core portion.

Inoue, K.; Tachikawa, K.; Togano, K.

1982-03-30T23:59:59.000Z

418

It's Elemental - The Element Zinc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Copper Copper Previous Element (Copper) The Periodic Table of Elements Next Element (Gallium) Gallium The Element Zinc [Click for Isotope Data] 30 Zn Zinc 65.38 Atomic Number: 30 Atomic Weight: 65.38 Melting Point: 692.68 K (419.53°C or 787.15°F) Boiling Point: 1180 K (907°C or 1665°F) Density: 7.134 grams per cubic centimeter Phase at Room Temperature: Solid Element Classification: Metal Period Number: 4 Group Number: 12 Group Name: none What's in a name? From the German word zink. Say what? Zinc is pronounced as ZINK. History and Uses: Although zinc compounds have been used for at least 2,500 years in the production of brass, zinc wasn't recognized as a distinct element until much later. Metallic zinc was first produced in India sometime in the 1400s by heating the mineral calamine (ZnCO3) with wool. Zinc was rediscovered by

419

Microsoft Word - 25A2445 Continued  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

This ARPA-E program plans to address the vast energy loss and consumption associated with conventional lighting by developing a new This ARPA-E program plans to address the vast energy loss and consumption associated with conventional lighting by developing a new route to large, high-quality, single crystals of gallium nitride. These crystals will serve as substrates for LEDs offering high-efficiency lighting. Around 8% of the energy consumption in the U.S. is from lighting, and by 2025, the U.S. could consume as much as 1,000 TWh per year. In addition, conventional light sources can account for more than 25% of a building's energy demands in the forms of direct energy for lighting, waste heat from the lights, and higher HVAC costs due to the waste heat. With its more efficient light production and minimal waste heat, gallium-nitride (GaN) Solid- State Lighting (SSL) technology has the potential to reduce energy consumption by

420

A test stand for off-line laser ion source development at TRIUMF  

SciTech Connect (OSTI)

A test stand for ion source development and laser resonance ionization spectroscopy was built and commissioned at TRIUMF. The test stand is needed to develop efficient ion sources that can function reliably in the hostile, high temperature, high radiation environment of TRIUMF's isotope separator on-line (ISOL) production target ion source. In addition, it enables laser resonance ionization spectroscopy to develop laser excitation schemes suitable for the solid-state laser systems used with TRIUMF's resonant ionization laser ion source . Also, it allows for possible improvement of current ion sources and validation of new designs. The test stand employs a copy of the ion optics used on-line, so that results can be transferred directly to radioactive ion beam production. Due to space restrictions and the need for rapid mass scans, a quadrupole mass spectrometer is used as a mass separator. One of the first experiments conducted on the laser ion source test stand (LIS STAND) was resonant ionization spectroscopy of gallium to improve on the ionization scheme previously used on-line, so that low yield isotopes (e.g., {sup 62}Ga) become available for experiments. Different Rydberg series in gallium were observed and autoionizing states were searched for. The overall LIS STAND system performance, characteristics, and the first resonant ionization spectroscopy are described.

Lavoie, J. P. [TRIUMF, 4004 Wesbrook Mall, Vancouver, British Columbia V6T 2A3 (Canada); Universite Laval, Quebec City, Quebec G1K 7P4 (Canada); Li, R.; Bricault, P.; Lassen, J. [TRIUMF, 4004 Wesbrook Mall, Vancouver, British Columbia V6T 2A3 (Canada); Chachkova, O. [TRIUMF, 4004 Wesbrook Mall, Vancouver, British Columbia V6T 2A3 (Canada); University of Victoria, Victoria, British Columbia V8N 1M5 (Canada); Teigelhoefer, A. [TRIUMF, 4004 Wesbrook Mall, Vancouver, British Columbia V6T 2A3 (Canada); University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada)

2013-01-15T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

The development of integrated chemical microsensors in GaAs  

SciTech Connect (OSTI)

Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

1999-11-01T23:59:59.000Z

422

High-heat-load synchrotron tests of room-temperature, silicon crystal monochromators at the CHESS F-2 wiggler station  

SciTech Connect (OSTI)

This note summarizes the results of the single crystal monochromator high-heat-load tests performed at the CHESS F-2 wiggler station. The results from two different cooling geometries are presented: (1) the ``pin-post`` crystal and (2) the ``criss-cross`` crystal. The data presented were taken in August 1993 (water-cooled pin-post) and in April 1995 (water- and gallium-cooled pin-post crystal and gallium-cooled criss-cross crystal). The motivation for trying these cooling (or heat exchanger) geometries is to improve the heat transfer efficiency over that of the conventional slotted crystals. Calculations suggest that the pin-post or the microchannel design can significantly improve the thermal performance of the crystal. The pin-post crystal used here was fabricated by Rocketdyne Albuquerque Operations. From the performance of the conventional slotted crystals, it was thought that increased turbulence in the flow pattern may also enhance the heat transfer. The criss-cross crystal was a simple attempt to achieve the increased flow turbulence. The criss-cross crystal was partly fabricated in-house (cutting, etching and polishing) and bonded by RAO. Finally, a performance comparison among all the different room temperature silicon monochromators that have been tested by the APS is presented. The data includes measurements with the slotted crystal and the core-drilled crystals. Altogether, the data presented here were taken at the CHESS F-2 wiggler station between 1991 and 1995.

Lee, W.K.; Fernandez, P.B.; Graber, T.; Assoufid, L.

1995-09-08T23:59:59.000Z

423

A new optical parametric amplifier based on lithium thioindate used for sum frequency generation vibrational spectroscopic studies of the Amide I mode of an interfacial model peptide  

SciTech Connect (OSTI)

We describe a new optical parametric amplifier (OPA) that employs lithium thioindate, LiInS{sub 2} (LIS), to create tunable infrared light between 1500 cm{sup -1} and 2000 cm{sup -1}. The OPA based on LIS described within provides intense infrared light with a good beam profile relative to similar OPAs built on silver gallium sulfide, AgGaS{sub 2} (AGS), or silver gallium selenide, AgGaSe{sub 2} (AGSe). We have used the new LIS OPA to perform surface-specific sum frequency generation (SFG) vibrational spectroscopy of the amide I vibrational mode of a model peptide at the hydrophobic deuterated polystyrene (d{sub 8}-PS)-phosphate buffered saline interface. This model polypeptide (which is known to be an ?-helix in the bulk solution under the high ionic strength conditions employed here) contains hydrophobic leucyl (L) residues and hydrophilic lysyl (K) residues, with sequence Ac-LKKLLKLLKKLLKL-NH{sub 2}. The amide I mode at the d{sub 8}-PS-buffer interface was found to be centered around 1655 cm{sup -1}. This can be interpreted as the peptide having maintained its {alpha}-helical structure when adsorbed on the hydrophobic surface, although other interpretations are discussed.

York, Roger L.; Holinga, George J.; Guyer, Dean R.; McCrea, Keith R.; Ward, Robert S.; Somorjai, Gabor A.

2008-05-03T23:59:59.000Z

424

Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors  

SciTech Connect (OSTI)

Two schemes of nucleation and growth of gallium nitride on Si(111) substrates are investigated and the structural and electrical properties of the resulting films are reported. Gallium nitride films grown using a 10{endash}500 nm-thick AlN buffer layer deposited at high temperature ({similar_to}1050{degree}C) are found to be under 260{endash}530 MPa of tensile stress and exhibit cracking, the origin of which is discussed. The threading dislocation density in these films increases with increasing AlN thickness, covering a range of 1.1 to {gt}5.8{times}10{sup 9}cm{sup {minus}2}. Films grown using a thick, AlN-to-GaN graded buffer layer are found to be under compressive stress and are completely crack free. Heterojunction field effect transistors fabricated on such films result in well-defined saturation and pinch-off behavior with a saturated current of {similar_to}525 mA/mm and a transconductance of {similar_to}100 mS/mm in dc operation. {copyright} 2001 American Institute of Physics.

Marchand, H.; Zhao, L.; Zhang, N.; Moran, B.; Coffie, R.; Mishra, U. K.; Speck, J. S.; DenBaars, S. P.; Freitas, J. A.

2001-06-15T23:59:59.000Z

425

Potential mechanisms for corrosion and stress corrosion cracking failure of 3013 storage containers composed of 316 stainless steel  

SciTech Connect (OSTI)

The degradation of 316 stainless steel (SS) storage container materials is a potential problem for radioactive waste disposition. Container materials will be exposed to significant ionizing radiation, elevated temperatures, embrittling and/or alloying agents (e.g., gallium), chloride-containing compounds (as much as 20 wt% Cl or Cl{sup {minus}}), oxidizing compounds, and a limited quantity of moisture. Additionally, containers will contain welds that have heterogeneous composition due to solute segregation and that may retain significant residual stress. All of the above-listed environmental and material conditions have been shown to be deleterious to material integrity under certain conditions. Unfortunately, the precise conditions within each container and environment is unknown and may vary widely from container to container. Thus, no single test or set of tests will be able mimic the broad range of storage container conditions. Additionally, material behavior cannot be predicted because the synergistic effects of temperature, time, chloride, moisture, sensitization, weldments, salt formation, etc., have not been fully studied. The complexity and uncertainty of storage conditions precludes any detailed recommendations. This document attempts to detail selected previous studies and to suggest some general guidelines for storage of radioactive waste. Because of the voluminous research in this area, this review cannot be considered to be comprehensive. Readers are directed to references that contain detailed reviews of particular processes for more information. Note that the effect of gallium on the degradation of SS storage containers has been discussed elsewhere and will not be discussed here.

Kolman, D.G.; Butt, D.P.

1998-03-01T23:59:59.000Z

426

Coulomb excitation of 73Ga  

E-Print Network [OSTI]

The B(E2; Ii -> If) values for transitions in 71Ga and 73Ga were deduced from a Coulomb excitation experiment at the safe energy of 2.95 MeV/nucleon using post-accelerated beams of 71,73Ga at the REX-ISOLDE on-line isotope mass separator facility. The emitted gamma rays were detected by the MINIBALL-detector array and B(E2; Ii->If) values were obtained from the yields normalized to the known strength of the 2+ -> 0+ transition in the 120Sn target. The comparison of these new results with the data of less neutron-rich gallium isotopes shows a shift of the E2 collectivity towards lower excitation energy when adding neutrons beyond N = 40. This supports conclusions from previous studies of the gallium isotopes which indicated a structural change in this isotopical chain between N = 40 and N = 42. Combined with recent measurements from collinear laser spectroscopy showing a 1/2- spin and parity for the ground state, the extracted results revealed evidence for a 1/2-; 3/2- doublet near the ground state in 73 31Ga42 differing by at most 0.8 keV in energy.

J. Diriken; I. Stefanescu; D. Balabanski; N. Blasi; A. Blazhev; N. Bree; J. Cederkäll; T. E. Cocolios; T. Davinson; J. Eberth; A. Ekström; D. V. Fedorov; V. N. Fedosseev; L. M. Fraile; S. Franchoo; G. Georgiev; K. Gladnishki; M. Huyse; O. V. Ivanov; V. S. Ivanov; J. Iwanicki; J. Jolie; T. Konstantinopoulos; Th. Kröll; R. Krücken; U. Köster; A. Lagoyannis; G. Lo Bianco; P. Maierbeck; B. A. Marsh; P. Napiorkowski; N. Patronis; D. Pauwels; P. Reiter; M. Seliverstov; G. Sletten; J. Van de Walle; P. Van Duppen; D. Voulot; W. B. Walters; N. Warr; F. Wenander; K. Wrzosek

2010-10-13T23:59:59.000Z

427

High-field critical current and mechanical properties of in situ processed V/sub 3/Ga superconductors  

SciTech Connect (OSTI)

It is found, in this study, that the superconducting properties of in situ processed Cu-V/sub 3/Ga composite wire are crucially affected by most aspects of their processing. The critical current density increases with the rise of vanadium concentration up to 45 at .% V and then, owing to the decrease of the gallium penetration velocity, falls off rapidly. A high gallium concentration and large cross-sectional area reduction also increase the critical current density. The maximum value obtained for the sample wire has about five times as large as that of commercial multifilamentary V/sub 3/Ga wire. The values for the highest critical temperature and upper critical field were slightly above the best values for bronze-processed V/sub 3/Ga. Copper-vanadium ingots of a few kilograms were prepared by the continuous arc-casting method. Sufficient uniform distribution of fine vanadium dendrites was achieved throughout the ingot. It is found that the superconducting properties of wire prepared from the ingot are almost identical to those of laboratory-scale prepared in situ V/sub 3/Ga.

Kumakura, H.; Tachikawa, K.; Togano, K.

1982-01-01T23:59:59.000Z

428

BridgeLux | Open Energy Information  

Open Energy Info (EERE)

BridgeLux BridgeLux Jump to: navigation, search Logo: BridgeLux Name BridgeLux Address 1170 Sonora Court Place Sunnyvale, California Zip 94086 Sector Efficiency Product Designs and makes high power indium gallium nitride light emitting diodes Website http://www.bridgelux.com/ Coordinates 37.371138°, -121.998365° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.371138,"lon":-121.998365,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

429

NREL: Awards and Honors - R&D 100 Awards  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

R&D 100 Awards R&D 100 Awards Since its inception as the Solar Energy Research Institute (SERI) in 1977, NREL/SERI has won 52 R&D 100 awards. 2013 Image Processing Occupancy Sensor (IPOS) Isothermal Battery Calorimeters (IBCs) Mono-crystalline Solar Cells 2012 Desiccant-enhanced Evaporative (DEVAP) Air-Conditioning Cycle SJ3 Solar Cells 2011 Innovalight Silicon Ink Process Flash Quantum Efficiency (Flash QE) System for Solar Cells Optical Cavity Furnace 2010 "Black Silicon" Nanocatalytic Wet-Chemical Etch Amonix 7700 Solar Power Generator 2009 Ultra-Accelerated Weathering System (UAWS) SkyTrough(tm) Parabolic Trough Solar Concentrating Collector PowerPlane UX Microbattery 2008 Inverted Metamorphic Multijunction (IMM) Solar Cell Hybrid CIGS (Copper Indium Gallium Diselenide)

430

Microsoft Word - FINAL Materials Strategy Request for Information May 5 2010  

Broader source: Energy.gov (indexed) [DOE]

Materials Strategy Materials Strategy Request for Information (RFI) DATE: May 6, 2010 SUBJECT: Request for Information (RFI) DESCRIPTION: The Department of Energy (DOE) recently announced its intent to develop its first-ever strategic plan for addressing the role of rare earth and other materials in energy technologies and processes. In support of this effort, DOE is seeking information from stakeholders on rare earth elements and other materials used in energy technologies, particularly clean energy components and applications, and energy efficiency technologies. Examples include lanthanum and lithium use in batteries, neodymium use in permanent magnet motors and compact fluorescent light bulbs, gallium and ytterbium use in photovoltaics, as well as the use of these materials in other clean energy

431

 

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Defect-Driven Magnetism in Mn-doped GaN Defect-Driven Magnetism in Mn-doped GaN Semiconductors doped with magnetic elements are very interesting materials. In these materials, the magnetic impurities interact with and induce magnetism in the semiconductor host. Thus, they have the potential for combining magnetism with the rich electronic behavior of semiconductors, which may lead to new generations of low-power-consumption electronics, non-volatile memories, and field-configurable logic devices. Gallium nitride doped with Mn is particularly interesting because it is one of the few materials for which magnetism above room temperature has been reported, making it a candidate room-temperature magnetic semiconductor. Photo: Gan Molecules Illustration of the crystal structures derived from x-ray results and calculations. In ideal GaN (left), a Mn atom substitutes

432

Global Solar Energy Inc GSE | Open Energy Information  

Open Energy Info (EERE)

GSE GSE Jump to: navigation, search Name Global Solar Energy Inc (GSE) Place Tucson, Arizona Zip 85747 Sector Solar Product US-based manufacturer of thin-film copper indium gallium diselenide (CIGS) solar cells with factory in Tucson, Arizona. Coordinates 32.221553°, -110.969754° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":32.221553,"lon":-110.969754,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

433

Main Title 32pt  

Broader source: Energy.gov (indexed) [DOE]

Electroactive Ionic Liquids: Electroactive Ionic Liquids: A New Approach to Flow Batteries 2. Gallium Nitride Substrates for Power Electronics: Electrochemical Solution Growth Karen Waldrip, PhD Advanced Power Sources R&D Sandia National Labs, Albuquerque, NM knwaldr@sandia.gov Sandia National Laboratories' Programs Electroactive Ionic Liquids: A New Approach To Flow Batteries Date Travis Anderson David Ingersoll Chad Staiger Karen Waldrip Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. Flow Batteries *No cross contamination *Flexible layout *High cycle life *Large, tunable capacity *Low maintenance vanadium redox couples are

434

Page not found | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

21 - 13730 of 26,764 results. 21 - 13730 of 26,764 results. Download CX-010974: Categorical Exclusion Determination Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory http://energy.gov/nepa/downloads/cx-010974-categorical-exclusion-determination Download CX-010975: Categorical Exclusion Determination Advanced Climate Control and Cabin Preconditioning using Zonal Distribution, Advanced Heat Pump... CX(s) Applied: B3.6, B5.1 Date: 09/16/2013 Location(s): Michigan Offices(s): National Energy Technology Laboratory http://energy.gov/nepa/downloads/cx-010975-categorical-exclusion-determination Download CX-010976: Categorical Exclusion Determination

435

Cree Inc | Open Energy Information  

Open Energy Info (EERE)

Cree Inc Cree Inc Jump to: navigation, search Name Cree Inc Place Durham, North Carolina Zip 27703 Product Cree develops and manufactures semiconductor materials and devices based on silicon carbide (SiC), gallium nitride (GaN), silicon (Si) and related compounds. Coordinates 45.396265°, -122.755099° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":45.396265,"lon":-122.755099,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

436

DuPont Technology Breaks Away From Glass | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

DuPont Technology Breaks Away From Glass DuPont Technology Breaks Away From Glass DuPont Technology Breaks Away From Glass April 22, 2010 - 4:20pm Addthis Delaware-based DuPont is working to develop ultra-thin moisture protective films for photovoltaic panels - so thin they're about 1,000 times thinner than a human hair. DuPont is working on new photovoltaic technology that will let manufacturers of copper indium gallium selenide, or CIGS, solar cells and organic light emitting diodes, or OLED, displays protect products with thin layers of ceramic and polymer material instead of glass. These ultra-thin protective films could help prevent deterioration from moisture. Because of their potential to reduce the cost of producing solar energy, "thin-film PV modules are projected to be the fastest-growing segment of

437

U.S. DEPARTIVmNT OF ENFRGY EERE PROJECT MANAGEMENT CENTER NEP.A DETFmllNATION  

Broader source: Energy.gov (indexed) [DOE]

DEPARTIVmNT OF ENFRGY DEPARTIVmNT OF ENFRGY EERE PROJECT MANAGEMENT CENTER NEP.A DETFmllNATION RECIPIENT:MEMC Electronic Materials, Inc. Page 1 of2 STATE: MO PROJECT TITLE: High Quality, Low Cost Bulk Gallium Nitride (GaN) Substrates Grown by the Electrochemical Solution Growth Method Funding Opportunity Announcement Number DE-FOA-0000560 Procurement Instrument Number NEPA Control Number CID Number DE-EE0005755 GF0-0005755-001 G05755 Based on my r eview of the information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 451.1A), I have made the following determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering, analysis, and dissemination Information gathering (including, but not limited to, literature surveys, inventories, site visits, and

438

Spire Semiconductor formerly Bandwidth Semiconductor LLC | Open Energy  

Open Energy Info (EERE)

Semiconductor formerly Bandwidth Semiconductor LLC Semiconductor formerly Bandwidth Semiconductor LLC Jump to: navigation, search Name Spire Semiconductor (formerly Bandwidth Semiconductor LLC) Place Hudson, New Hampshire Zip 3051 Product Spire-owned US-based manufacturer of gallium-arsenide (GaAs) cells; offers design and manufacturing capabilities of concentrator cells. References Spire Semiconductor (formerly Bandwidth Semiconductor LLC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Spire Semiconductor (formerly Bandwidth Semiconductor LLC) is a company located in Hudson, New Hampshire . References ↑ "Spire Semiconductor (formerly Bandwidth Semiconductor LLC)" Retrieved from "http://en.openei.org/w/index.php?title=Spire_Semiconductor_formerly_Bandwidth_Semiconductor_LLC&oldid=351621"

439

NIDC: Online Catalog of Isotope Products | Product Search  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Product Search Product Search Step 1 - Enter your search criteria below. Element Name Actinium Aluminum Americium Antimony Argon Arsenic Astatine Barium Berkelium Beryllium Bismuth Bohrium Boron Bromine Cadmium Caesium Calcium Californium Carbon Cerium Chlorine Chromium Cobalt Copernicium Copper Curium Darmstadtium Dubnium Dysprosium Einsteinium Erbium Europium Fermium Fluorine Francium Gadolinium Gallium Germanium Gold Hafnium Hassium Helium Holmium Hydrogen Indium Iodine Iridium Iron Krypton Lanthanum Lawrencium Lead Lithium Lutetium Magnesium Manganese Meitnerium Mendelevium Mercury Molybdenum Neodymium Neon Neptunium Nickel Niobium Nitrogen Nobelium Osmium Oxygen Palladium Phosphorus Platinum Plutonium Polonium Potassium Praseodymium Promethium Protactinium Radium Radon Rhenium Rhodium Roentgenium Rubidium Ruthenium Rutherfordium Samarium Scandium Seaborgium Selenium Silicon Silver Sodium Strontium Sulfur Tantalum Technetium Tellurium Terbium Thallium Thorium Thulium Tin Titanium Tungsten Ununhexium Ununoctium Ununpentium Ununquadium Ununseptium Ununtrium Uranium Vanadium Xenon Ytterbium Yttrium Zinc Zirconium

440

Page not found | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

41 - 8950 of 29,416 results. 41 - 8950 of 29,416 results. Download CX-000845: Categorical Exclusion Determination 25A2445 - Ammonothermal Bulk Gallium Nitride (GaN) Crystal Growth for Energy Efficient Lighting CX(s) Applied: B3.6 Date: 01/15/2010 Location(s): New York Office(s): Advanced Research Projects Agency - Energy http://energy.gov/nepa/downloads/cx-000845-categorical-exclusion-determination Download CX-000839: Categorical Exclusion Determination 25A1089 - Electroville: High-Amperage Energy Storage Device-Energy Storage for the Neighborhood CX(s) Applied: B3.6 Date: 01/15/2010 Location(s): Massachusetts Office(s): Advanced Research Projects Agency - Energy http://energy.gov/nepa/downloads/cx-000839-categorical-exclusion-determination Download CX-000860: Categorical Exclusion Determination

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

STATEMENT OF CONSIDERATIONS  

Broader source: Energy.gov (indexed) [DOE]

331, 331, W(A} 2010·047, CH-1569 The Petitioner, Applied Materials, Inc., (Applied) was awarded the subject cooperative agreement with DOE for the performance of work entitled, "Recovery Act: Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices." The objective of the work is to achieve cost reduction of solid-state lighting (SSL) through improvements in manufacturing equipment, processes, and techniques. The primary objectives of the program are to reduce energy use and resulting pollutants by encouraging the adoption and installation of improved solid-state lighting products and to bolster the US manufacturing and technology base for related technologies. The program will support advanced manufacturing of LEOs to make SSL a more competitive

442

NREL: Photovoltaics Research - Testing and Analysis to Advance R&D  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Testing and Analysis to Advance R&D Testing and Analysis to Advance R&D Get the Adobe Flash Player to see this video. Text Alternative NREL has capabilities and experts in measurements, characterization, reliability, engineering, scientific computing, and theory to support photovoltaic (PV) research and development (R&D) across a range of conversion technologies and scales. Conversion technologies include the primary areas of silicon, polycrystalline thin films (cadmium telluride [CdTe], copper indium gallium diselenide [CIGS]), III-V-based multijunctions, and organic PV. And scales of interest range from materials, to cells, modules, and systems. Measurements and Characterization Photo of a hand holding tweezers pinching a square wafer that is striped gold and black. We provide a huge range of techniques for measuring and characterizing PV

443

TVDG LET Calculator  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

To The B N L Tandem Van de Graaff Accelerator To The B N L Tandem Van de Graaff Accelerator TVDG LET Calculator This program calculates the Peak LET, Corresponding Energy and Range as well as the LET and Range at the Specified Energy for the Specified Ion in the Specified Target. Select the Target Material from the dropdown list. Select the Ion Specie from the dropdown list. Enter the Total Ion Energy in the text box. This is equal to the Atomic Mass times the Energy/Nucleon. Click the 'Calculate' button or press the 'Enter' key. The Peak LET, Corresponding Energy and Range as well as the LET and Range at the Specified Energy for the Specified Ion in the Specified Target will be returned. Select your Target from the list Air Aluminum Oxide Carbon Copper Gallium Arsenide Gold Polyester Polyethylene Silicon Silicon Dioxide Skin Soda Lime Glass Sodium Iodide Water Select your Ion from the list

444

Los Alamos: MST: MST-6: EML: Electron Microscopy Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Strata DB235 FIB/SEM (Focused Ion Beam/High Reolution Scanning Electron Microscope) Strata DB235 FIB/SEM (Focused Ion Beam/High Reolution Scanning Electron Microscope) FEI Strata DB235 FIB/SEM (Focused Ion Beam/High Reolution Scanning Electron Microscope) This is a versatile field emission scanning electron microscope integrated with a focused ion beam column that is used for sophisticated SEM and TEM sample preparation, micromachining, and ultrahigh resolution SEM imaging. The microscope is also equipped for x-ray microanalysis and crystallographic orientation imaging. Microscope consists of a Hexalens SFEG electron beam column, and a Magnum ion beam column with a gallium liquid metal ion source. Imaging with both secondary electrons and ions. Digital image acquisition. Small, stable, high brightness Schottky based field emission electron source provides 1.5 nm resolution at 30 kV. Three electron beam lens modes - normal imaging, high resolution imaging, and EDS imaging.

445

CX-002541: Categorical Exclusion Determination | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

41: Categorical Exclusion Determination 41: Categorical Exclusion Determination CX-002541: Categorical Exclusion Determination Emerging Renewables Industries: Copper, Indium, Gallium, Selenium (CIGS) Linear Source Thermal Deposition CX(s) Applied: B2.2, B5.1 Date: 05/19/2010 Location(s): St. Paul, Minnesota Office(s): Energy Efficiency and Renewable Energy, Golden Field Office The State of Minnesota plans to provide $800,000 in Recovery Act funds to Veeco Instrument, Inc. at 4900 Constellation Drive, St. Paul, Minnesota 55127 for the purchase of equipment and related activities in the manufacturing of thin film solar panels. Veeco Instruments, Inc. is a provider of process and metrology equipment used to manufacture data storage, semiconductor, wireless, lighting and solar equipment. Veeco's St.

446

Development of a Bulk GaN Growth Technique for Low Defect Density, Large-Area Native Substrates  

Broader source: Energy.gov (indexed) [DOE]

Next-Generation Power Electronics: Next-Generation Power Electronics: Electrochemical Solution Growth (ESG) Technique for Bulk Gallium Nitride Substrates Karen Waldrip Dept. 2546, Advanced Power Sources R&D Sandia National Labs, Albuquerque, NM knwaldr@sandia.gov, (505) 844-1619 Acknowledgements: Mike Soboroff, Stan Atcitty, Nancy Clark, and John Boyes David Ingersoll, Frank Delnick, and Travis Anderson 2010 DOE Peer Review, Nov. 2-4, Washington, DC Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. Funded by the Energy Storage Systems Program of the U.S. Department Of Energy through Sandia National Laboratories Project Objective

447

Categorical Exclusion (CX) Determinations By Date | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

5, 2010 5, 2010 CX-006103: Categorical Exclusion Determination California-City-San Clemente CX(s) Applied: A1, A9, A11, B1.32, B5.1 Date: 03/05/2010 Location(s): San Clemente, California Office(s): Energy Efficiency and Renewable Energy March 5, 2010 CX-001054: Categorical Exclusion Determination Aquantis 2.5 Megawatt Ocean Current Generation Device CX(s) Applied: A9, B3.6 Date: 03/05/2010 Location(s): California Office(s): Energy Efficiency and Renewable Energy, Golden Field Office March 5, 2010 CX-001137: Categorical Exclusion Determination Advanced Epi Tools for Gallium Nitride LED (Light Emitting Diode) Devices CX(s) Applied: B3.6 Date: 03/05/2010 Location(s): Santa Clara, California Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

448

Definition: Semiconductor | Open Energy Information  

Open Energy Info (EERE)

Semiconductor Semiconductor Jump to: navigation, search Dictionary.png Semiconductor Any material that has a limited capacity for conducting an electric current. Certain semiconductors, including silicon, gallium arsenide, copper indium diselenide, and cadmium telluride, are uniquely suited to the photovoltaic conversion process.[1] View on Wikipedia Wikipedia Definition A semiconductor is a material which has electrical conductivity to a degree between that of a metal (such as copper) and that of an insulator (such as glass). Semiconductors are the foundation of modern solid state electronics, including transistors, solar cells, light-emitting diodes (LEDs), quantum dots and digital and analog integrated circuits. A semiconductor may have a number of unique properties, one of which is the

449

NIDC: Online Catalog of Isotope Products | Request a New Product  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Request a New Product Request a New Product Step 1 - Enter the new product's criteria below. Element Name Actinium Aluminum Americium Antimony Argon Arsenic Astatine Barium Berkelium Beryllium Bismuth Bohrium Boron Bromine Cadmium Caesium Calcium Californium Carbon Cerium Chlorine Chromium Cobalt Copernicium Copper Curium Darmstadtium Dubnium Dysprosium Einsteinium Erbium Europium Fermium Fluorine Francium Gadolinium Gallium Germanium Gold Hafnium Hassium Helium Holmium Hydrogen Indium Iodine Iridium Iron Krypton Lanthanum Lawrencium Lead Lithium Lutetium Magnesium Manganese Meitnerium Mendelevium Mercury Molybdenum Neodymium Neon Neptunium Nickel Niobium Nitrogen Nobelium Osmium Oxygen Palladium Phosphorus Platinum Plutonium Polonium Potassium Praseodymium Promethium Protactinium Radium Radon Rhenium Rhodium Roentgenium Rubidium Ruthenium Rutherfordium Samarium Scandium Seaborgium Selenium Silicon Silver Sodium Strontium Sulfur Tantalum Technetium Tellurium Terbium Thallium Thorium Thulium Tin Titanium Tungsten Ununhexium Ununoctium Ununpentium Ununquadium Ununseptium Ununtrium Uranium Vanadium Xenon Ytterbium Yttrium Zinc Zirconium

450

Self-Healing of Structural Damage to Restore Performance of Electrical  

Office of Science (SC) Website

Self-Healing of Structural Damage to Self-Healing of Structural Damage to Restore Performance of Electrical Circuits Energy Frontier Research Centers (EFRCs) EFRCs Home Centers Research Science Highlights Highlight Archives News & Events Publications Contact BES Home 04.27.12 Self-Healing of Structural Damage to Restore Performance of Electrical Circuits Print Text Size: A A A RSS Feeds FeedbackShare Page Scientific Achievement Designed chemical interactions of liquid-metal-filled microcapsules target areas of microstructural damage and restore conductive pathways. Significance and Impact Selective self-healing mechanism extends the lifetime and reliability of electronic devices including battery electrodes. Research Details Liquid Indium-Gallium metal-filled microcapsules restore nearly 99% of the

451

CX-004937: Categorical Exclusion Determination | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

937: Categorical Exclusion Determination 937: Categorical Exclusion Determination CX-004937: Categorical Exclusion Determination Transphorm, Inc. -High Performance Gallium Nitride High Electron Mobility Transistor Modules for Agile Power Electronics CX(s) Applied: B3.6 Date: 08/05/2010 Location(s): California Office(s): Advanced Research Projects Agency - Energy Funding will support laboratory research, design, testing, and fabrication of the first hybrid multichip power modules for inverters/converters operating at 1 megahertz, capable of being retrofitted to older generation motors, embedded in new motors, and in grid-tied photovoltaic inverters. The proposed work is consistent with the goal of Agile Delivery of Electric Power Technology (ADEPT): fundamental advances in soft magnetics, high voltage switches, and reliable, high-density charge storage. Proposed work

452

Page not found | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

51 - 8160 of 31,917 results. 51 - 8160 of 31,917 results. Download CX-002564: Categorical Exclusion Determination FPE Renewables, LLC CX(s) Applied: B5.1 Date: 05/26/2010 Location(s): Lynden, Washington Office(s): Energy Efficiency and Renewable Energy, Golden Field Office http://energy.gov/nepa/downloads/cx-002564-categorical-exclusion-determination Download CX-002399: Categorical Exclusion Determination California Hydrogen Infrastructure Project (Fountain Valley, California) CX(s) Applied: B5.1 Date: 05/25/2010 Location(s): Fountain Valley, California Office(s): Energy Efficiency and Renewable Energy, Golden Field Office http://energy.gov/nepa/downloads/cx-002399-categorical-exclusion-determination Download CX-002541: Categorical Exclusion Determination Emerging Renewables Industries: Copper, Indium, Gallium, Selenium (CIGS)

453

Categorical Exclusion (CX) Determinations By Date | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

5, 2010 5, 2010 CX-000839: Categorical Exclusion Determination 25A1089 - Electroville: High-Amperage Energy Storage Device-Energy Storage for the Neighborhood CX(s) Applied: B3.6 Date: 01/15/2010 Location(s): Massachusetts Office(s): Advanced Research Projects Agency - Energy January 15, 2010 CX-000845: Categorical Exclusion Determination 25A2445 - Ammonothermal Bulk Gallium Nitride (GaN) Crystal Growth for Energy Efficient Lighting CX(s) Applied: B3.6 Date: 01/15/2010 Location(s): New York Office(s): Advanced Research Projects Agency - Energy January 15, 2010 CX-000852: Categorical Exclusion Determination 25A4800 - High Energy Permanent Magnets for Hybrid Vehicles and Alternative Energy CX(s) Applied: B3.6 Date: 01/15/2010 Location(s): Delaware Office(s): Advanced Research Projects Agency - Energy

454

Page not found | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

61 - 15470 of 31,917 results. 61 - 15470 of 31,917 results. Download CX-004937: Categorical Exclusion Determination Transphorm, Inc. -High Performance Gallium Nitride High Electron Mobility Transistor Modules for Agile Power Electronics CX(s) Applied: B3.6 Date: 08/05/2010 Location(s): California Office(s): Advanced Research Projects Agency - Energy http://energy.gov/nepa/downloads/cx-004937-categorical-exclusion-determination Download Federal Register Notice for January 2012 Meeting Federal Register Notice for January 2012 URTAC Meeting http://energy.gov/fe/downloads/federal-register-notice-january-2012-meeting Download TBH-0080- In the Matter of Billy Joe Baptist This decision will consider an Order to Show Cause that I issued on February 3, 2009, regarding a March 6, 2008, whistleblower complaint filed

455

Page not found | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

61 - 17070 of 31,917 results. 61 - 17070 of 31,917 results. Download CX-001136: Categorical Exclusion Determination 130 Lumens Per Watt 1000 Lumen Warm White LEDs (Light-Emitting Diodes) for Illumination CX(s) Applied: B3.6, B5.1 Date: 03/05/2010 Location(s): San Jose, California Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory http://energy.gov/nepa/downloads/cx-001136-categorical-exclusion-determination Download CX-001137: Categorical Exclusion Determination Advanced Epi Tools for Gallium Nitride LED (Light Emitting Diode) Devices CX(s) Applied: B3.6 Date: 03/05/2010 Location(s): Santa Clara, California Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory http://energy.gov/nepa/downloads/cx-001137-categorical-exclusion-determination

456

California | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

January 10, 2011 January 10, 2011 Vintage DOE: What is Fusion This edition of vintage DOE pulls a discussion of nuclear fusion from the video archive. January 10, 2011 CX-004965: Categorical Exclusion Determination California-City-Walnut Creek CX(s) Applied: A1, A9, A11, B5.1 Date: 01/10/2011 Location(s): Walnut Creek, California Office(s): Energy Efficiency and Renewable Energy January 5, 2011 CX-004886: Categorical Exclusion Determination Copper Indium Gallium Sulfur-Selenide (CIGSS) Manufacturing Plant CX(s) Applied: B1.31 Date: 01/05/2011 Location(s): San Jose, California Office(s): Loan Guarantee Program Office December 17, 2010 EIS-0455: Notice of Adoption of an Environmental Impact Statement Genesis Solar Energy Project, Riverside County, CA December 17, 2010 EIS-0403: DOE and BLM Notice of Availability of the Draft Programmatic

457

Beyond Silicon: Cutting the Costs of Solar Power | U.S. DOE Office of Science (SC)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Beyond Silicon: Cutting the Costs of Solar Power Beyond Silicon: Cutting the Costs of Solar Power Stories of Discovery & Innovation Beyond Silicon: Cutting the Costs of Solar Power Enlarge Photo Courtesy of University of Illinois Mechanically flexible, high efficiency solar module that uses an interconnected array of microscale GaAs photovoltaic cells, grown in a multilayer stack on a wafer and then printed onto a sheet of plastic. Enlarge Photo 04.15.11 Beyond Silicon: Cutting the Costs of Solar Power New method of fabricating semiconductors from gallium arsenide promises more affordable solar power, improved semiconductor devices. The biggest single barrier to widespread adoption of solar power continues to be the cost of solar cells. University of Illinois materials scientists supported by the DOE Office of Science have scored a

458

HelioVolt Corporation | Open Energy Information  

Open Energy Info (EERE)

HelioVolt Corporation HelioVolt Corporation Jump to: navigation, search Name HelioVolt Corporation Place Austin, Texas Zip TX 78744 Product Copper indium gallium selenide (CIGS) thin-film PV module manufacturer based in Austin, Texas. Website http://www.heliovolt.net/ Coordinates 30.267605°, -97.742984° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":30.267605,"lon":-97.742984,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

459

NREL Scientists Spurred the Success of Multijunction Solar Cells (Fact Sheet), Innovation: The Spectrum of Clean Energy Innovation, NREL (National Renewable Energy Laboratory)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Scientists Spurred the Success Scientists Spurred the Success of Multijunction Solar Cells Before 1984, many scientists believed that high-quality gallium indium phosphide (GaInP) alloys could not be grown for use as semiconductors because the alloys would separate. One researcher at the Solar Energy Research Institute (SERI) thought differently. His name was Jerry Olson, and his innovative thinking changed solar history. Olson identified a material combination that allowed the multijunction cell to flourish. It is now the workhorse that powers satellites and the catalyst for renewed interest in concentrator photovoltaic (CPV) products. In the early 1980s, Olson was a scientist at SERI, the predecessor of the National Renewable Energy Laboratory (NREL). At the time, solar researchers were looking for the ideal combina-

460

COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces COBRA: Determining Atomic Positions in Thin-Film Structures and Interfaces Coherent Bragg rod analyses (COBRA) experiments using synchrotron x-rays at Argonne's Advanced Photon Source (MHATT-CAT and PNC-CAT beamlines) directly revealed the sub-angstrom atomic interaction of epitaxial films with substrates. Information on how atoms in the adjoining layers of the film and substrate rearrange to mimic each other may lead to improvements in semiconductor manufacturing and the development of novel heterostructure materials, such as multilayer ferroelectrics, magnetic nanostructures and thin film superconductors. COBRA electron density map of a Gd2O3 film on a gallium arsenide substrate. The peaks correspond to folded Gd atomic positions parallel to the plane of the substrate.

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

CX-005363: Categorical Exclusion Determination | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

5363: Categorical Exclusion Determination 5363: Categorical Exclusion Determination CX-005363: Categorical Exclusion Determination Solar Junction's 100 Megawatt Manufacturing Line CX(s) Applied: B1.31 Date: 03/04/2011 Location(s): San Jose, California Office(s): Loan Guarantee Program Office The Department of Energy's proposed action is to issue a loan guarantee to Solar Junction to finance a 100 megawatt (MW) solar cell manufacturing line for multifunction photovoltaic solar cells to expand their existing 7 MW Demonstration Facility at 401 Charcot Avenue, San Jose, California 95131. The proposed project will commercialize an entirely new class of high-efficiency solar cells and concentrating photovoltaic components that incorporate high performance junctions formed with a tunable band gap semiconductor material, Gallium Indium Nitride Arsenide.

462

PII: S0141-6359(00)00045-3  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Microgrooving Microgrooving and microthreading tools for fabricating curvilinear features D.P. Adams a, *, M.J. Vasile b , A.S.M. Krishnan b a Sandia National Laboratories, Albuquerque, NM, USA, b Louisiana Tech University, Ruston, LA, USA Received 16 February 2000; accepted in revised form 4 May 2000 Abstract This paper presents techniques for fabricating microscopic, curvilinear features in a variety of workpiece materials. Microgrooving and microthreading tools with cutting widths as small as 13 ␮m are made by focused ion beam sputtering and used for ultraprecision machining. Tool fabrication involves directing a 20 keV gallium beam at polished cylindrical punches made of cobalt M42 high-speed steel or C2 tungsten carbide to create a number of critically aligned facets. Sputtering produces rake facets of desired angle and cutting edges having radii of curvature equal to 0.4 ␮m.

463

NREL: Photovoltaics Research - Thin Film Photovoltaic Partnership Project  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed the United States to attain world leadership in this area of solar technology. Three national R&D teams focused on thin-film semiconductor materials: amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS) and its alloys. The Module Reliability Team and Environmental Health and Safety Team were crosscutting. The teams comprised researchers from the solar industry, academia, and NREL who focused their efforts on improving materials, devices, and manufacturing processes-all

464

DuPont Technology Breaks Away From Glass | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

DuPont Technology Breaks Away From Glass DuPont Technology Breaks Away From Glass DuPont Technology Breaks Away From Glass April 22, 2010 - 4:20pm Addthis Delaware-based DuPont is working to develop ultra-thin moisture protective films for photovoltaic panels - so thin they're about 1,000 times thinner than a human hair. DuPont is working on new photovoltaic technology that will let manufacturers of copper indium gallium selenide, or CIGS, solar cells and organic light emitting diodes, or OLED, displays protect products with thin layers of ceramic and polymer material instead of glass. These ultra-thin protective films could help prevent deterioration from moisture. Because of their potential to reduce the cost of producing solar energy, "thin-film PV modules are projected to be the fastest-growing segment of

465

NIDC: Online Catalog of Isotope Products | Product List  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

List List Please select an available isotope product from the lists below. If you would like an isotope product that is not listed, you can make a request by clicking here. Stable Isotope Products Radio-Isotope Products Antimony Argon (Alt) Barium Bromine Bromine (Alt) Cadmium Calcium Carbon (Alt) Cerium Chlorine Chlorine (Alt) Chromium Copper Dysprosium Erbium Europium Gadolinium Gallium Germanium Hafnium Helium (Alt) Indium Iridium Iron Krypton (Alt) Lanthanum Lead Lithium Lutetium Magnesium Mercury Molybdenum Neodymium Neon (Alt) Nickel Nitrogen (Alt) Osmium Oxygen (Alt) Palladium Platinum Potassium Rhenium Rubidium Ruthenium Samarium Selenium Silicon Silver Strontium Sulfur Sulfur (Alt) Tantalum Tellurium Thallium Tin Titanium Tungsten Vanadium Xenon (Alt) Ytterbium Zinc Zirconium Actinium-225 Aluminum-26 Americium-241

466

JX Crystals Inc | Open Energy Information  

Open Energy Info (EERE)

JX Crystals Inc JX Crystals Inc Jump to: navigation, search Name JX Crystals Inc Place Issaquah, Washington State Zip 98027 Sector Solar Product JX Crystals designs and manufactures thermophotovoltaic gallium-antimonide cells for solar applications. Coordinates 47.530095°, -122.033799° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":47.530095,"lon":-122.033799,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

467

BridgeLux Inc former eLite Optoelectronics | Open Energy Information  

Open Energy Info (EERE)

BridgeLux Inc former eLite Optoelectronics BridgeLux Inc former eLite Optoelectronics Jump to: navigation, search Name BridgeLux Inc (former eLite Optoelectronics) Place Sunnyvale, California Zip 94086 Product Developer and provider of indium gallium nitride light emitting diodes (InGaN LEDs) for solid state lighting, mobile appliance, signage, and automotive applications. References BridgeLux Inc (former eLite Optoelectronics)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. BridgeLux Inc (former eLite Optoelectronics) is a company located in Sunnyvale, California . References ↑ "BridgeLux Inc (former eLite Optoelectronics)" Retrieved from "http://en.openei.org/w/index.php?title=BridgeLux_Inc_former_eLite_Optoelectronics&oldid=34303

468

Categorical Exclusion Determinations: New York | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

January 15, 2010 January 15, 2010 CX-000845: Categorical Exclusion Determination 25A2445 - Ammonothermal Bulk Gallium Nitride (GaN) Crystal Growth for Energy Efficient Lighting CX(s) Applied: B3.6 Date: 01/15/2010 Location(s): New York Office(s): Advanced Research Projects Agency - Energy December 29, 2009 CX-000273: Categorical Exclusion Determination Pressure Sensor and Telemetry Methods for Measurement while Drilling in Geothermal Wells CX(s) Applied: A9, B3.6 Date: 12/29/2009 Location(s): New York Office(s): Energy Efficiency and Renewable Energy, Golden Field Office December 21, 2009 CX-001281: Categorical Exclusion Determination Hire Experts, Lighting Retrofits, and Install Solar Lights CX(s) Applied: A9, B5.1 Date: 12/21/2009 Location(s): Suffolk, New York Office(s): Energy Efficiency and Renewable Energy

469

Reactions of 15-crown-5 and bis-15-crown-5 ethers with metal acetylacetonate ions in the gas phase  

SciTech Connect (OSTI)

A study was carried out on the ion-molecule reactions of ions arising in the dissociation of ferric, cobaltic, chromic, manganous, neodymium(II), gallium(III), and indium(III) acetylacetonates upon electron impact with 15-crown-5 and bis-15-crown-5. The ratio of the yields of (acac)x-1 /SUP M+L/ ions is determined by the case of reduction of M /SUP x+1+/ to M /SUP x+/ and for (acac)/sub 3/M complexes, this ratio decreases in the series Nd, In, GA > Cr > Fe, Co. The rate constant for the formation of acacCoL/sup +/ ions is greater than for acacFeL/sup +/ ions. The possibility of fixing transition metals in unstable oxidation states by crown ethers is demonstrated in the case of nickel.

Timofeev, O.S.; Bogatskii, A.V.; Gren, A.I.; Lobach, A.V.; Nekarsov, Y.S.; Zagorevskii, D.V.

1985-05-20T23:59:59.000Z

470

Radiolabeled red blood cells: status, problems, and prospects  

SciTech Connect (OSTI)

Radionuclidic labels for red cells can be divided into two main categories - cohort or pulse labels, and random labels. The random labels are incorporated into circulating cells of all ages and the labeling process is usually carried out in vitro. The red cell labels in predominant use involve random labeling and employ technetium-99m, chromium-51, indium-111, and gallium-68, roughly in that order. The extent of usefulness depends on the properties of the label such as the half-life, decay mode, and in-vivo stability, etc. Labeled cells can be used for red cell survival measurements when the half-life of the radionuclide is sufficiently long. The major portion of this article deals with random labels.

Srivastava, S.C.

1983-01-01T23:59:59.000Z

471

NREL photovoltaic subcontract reports: Abstracts and document control information, 1 August 1991--31 July 1992  

SciTech Connect (OSTI)

This report contains document control information and abstracts for the National Renewable Energy Laboratory (NREL) subcontracted photovoltaic program publications. It also lists source information on additional publications that describe US Department of Energy (DOE) PV research activities. It is not totally exhaustive, so it lists NREL contacts for requesting further information on the DOE and NREL PV programs. This report covers the period from August 1, 1991, through July 31, 1992. The purpose of continuing this type of publication is to help people keep abreast of specific PV interests, while maintaining a balance on the costs to the PV program. The information in this report is organized under PV technology areas: Amorphous silicon research; polycrystalline thin films (including copper indium diselenide, cadmium telluride, and thin-film silicon); crystalline materials and advanced concepts (including silicon, gallium arsenide, and other group III-V materials); and PV manufacturing technology development (which may include manufacturing information for various types of PV materials).

Not Available

1992-08-01T23:59:59.000Z

472

Lattice vibrations of pure and doped GaSe  

SciTech Connect (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

473

Growth and structure of photosensitive Pb{sub 1-x}Mn{sub x}Te(Ga) epitaxial films  

SciTech Connect (OSTI)

The growth and structure of (1-1.5)-{mu}m-thick Pb{sub 1-x}Mn{sub x}Te(Ga)(x = 0.06) films with 0.4-0.9 at % of gallium, grown on BaF{sub 2}(111) and Pb{sub 1-x}Sn{sub x}Te (x = 0.2) (100) substrates by molecular beam epitaxy, have been investigated. It is established that the films are crystallized into an fcc structure, and their growth planes are (111) and (100), according to the substrate orientation. The optimal conditions for obtaining high-resistivity photosensitive p-and n-type films with a perfect crystal structure (W{sub 1/2} = 80''-100'') have been determined.

Nuriev, I. R.; Sadygov, R. M.; Nazarov, A. M., E-mail: afinnazarov@yahoo.com [Azerbaijan National Academy of Sciences, Institute of Physics (Azerbaijan)

2008-05-15T23:59:59.000Z

474

The distribution of Ga and Sb impurities in Ge-Si crystals grown by the Bridgman method using a feeding rod  

SciTech Connect (OSTI)

Gallium- and antimony-doped Ge{sub 1-x}Si{sub x} crystals (0 {<=} x {<=} 0.25) have been grown by the improved Bridgman method using a silicon seed and a macrohomogeneous feeding Ge-Si rod of the corresponding composition. The impurity concentration profiles along the grown crystals were determined from Hall measurements. The mathematical problem of impurity distribution along two-component mixed crystals grown from a melt with uniform and graded composition is solved in the Pfann approximation and within the virtual-crystal model for the solid solution. It is shown that the experimental impurity distributions in Ge{sub 1-x}Si{sub x} crystals are described well by the data calculated on the assumption of linear change in the impurity segregation coefficient with the crystal composition.

Azhdarov, G. Kh., E-mail: zangi@physics.ab.az [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Zeynalov, Z. M. [Ganja State University (Azerbaijan); Huseynli, L. A. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

2009-01-15T23:59:59.000Z

475

Extraction of trace metals from fly ash  

DOE Patents [OSTI]

A process is described for recovering silver, gallium and/or other trace metals from a fine grained industrial fly ash associated with a process for producing phosphorous. The fly ash has a silicate base and contains surface deposits of the trace metals as oxides, chlorides or the like. The process is carried out by contacting the fly ash with AlCl/sub 3/ in an alkali halide melt to react the trace metals with the AlCl/sub 3/ to form compositions soluble in the melt and a residue containing the silicate and aluminum oxide or other aluminum precipitate, and separating the desired trace metal or metals from the melt by electrolysis or other separation techniques.

Blander, M.; Wai, C.M.; Nagy, Z.

1983-08-15T23:59:59.000Z

476

Effectiveness of a dopant in U-Zr metallic fuel to prevent lanthanide migration  

SciTech Connect (OSTI)

The advanced fast reactor concepts to achieve ultra-high burnup (about 50%) without requiring refueling by way of using metallic alloy fuel have gained interest. Fission product lanthanide accumulation at high burnup is substantial and its migration to cladding and reaction with cladding is a potential life-limiting phenomenon. As a means to solve this problem, adding an element that forms stable compounds with lanthanides to immobilize them has been proposed. The theoretical assessment shows that indium, thallium, gallium, and antimony are good candidates. Except for Sb, because these elements are low-melting temperature elements, liquid metal embrittlement of cladding is a concern if large sized agglomerates exist contacting the cladding. Alloy characterization of as-fabricated samples was performed to examine the effectiveness of the dopant addition method using optical microscopy and scanning electron microscopy. Although preliminary, the present results showed that indium is a better dopant to immobilize lanthanides.

Kim, Yeon Soo; Wieneck, T.; O'Hare, E.; Fortner, J. [Argonne National Laboratory 9700 S. Cass Ave, Argonne, IL 60439 (United States)

2013-07-01T23:59:59.000Z

477

Plasmonic Light Trapping in an Ultrathin Photovoltaic Layer with Film-Coupled Metamaterial Structures  

E-Print Network [OSTI]

A film-coupled metamaterial structure is numerically investigated for enhancing the light absorption in an ultrathin photovoltaic layer of crystalline gallium arsenide (GaAs). The top subwavelength concave grating and the bottom metallic film could not only effectively trap light with the help of wave interference and magnetic resonance effects excited above the bandgap, but also practically serve as electrical contacts for photon-generated charge collection. The energy absorbed by the active layer is greatly enhanced in the film-coupled metamaterial structure, resulting in significant enhancement on the short-circuit current density by three times over a free-standing GaAs layer at the same thickness. The results would facilitate the development of next-generation ultrathin solar cells with lower cost and higher efficiency.

Wang, Hao

2014-01-01T23:59:59.000Z

478

Design of a thermophotovoltaic battery substitute  

Science Journals Connector (OSTI)

Many military platforms that currently use the BA-5590 primary battery or the BB-390A/U rechargeable battery are limited in performance by low storage capacity and long recharge times. Thermo Power Corporation with team members JX Crystals and Essential Research Inc. is developing an advanced thermophotovoltaic (TPV) battery substitute that will provide higher storage capacity lower weight and instantaneous recharging (by refueling). The TPV battery substitute incorporates several advanced design features including: an evacuated and sealed enclosure for the emitter and PV cells to minimize unwanted convection heat transfer from the emitter to PV cells; selective tungsten emitter with a well matched gallium antimonide PV cell receiver; optical filter to recycle nonconvertible radiant energy; and a silicon carbide thermal recuperator to recover thermal energy from exhaust gases.

Edward F. Doyle; Frederick E. Becker; Kailash C. Shukla; Lewis M. Fraas

1999-01-01T23:59:59.000Z

479

X-ray induced optical reflectivity  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

The change in optical reflectivity induced by intense x-ray pulses can now be used to study ultrafast many body responses in solids in the femtosecond time domain. X-ray absorption creates photoelectrons and core level holes subsequently filled by Auger or fluorescence processes, and these excitations ultimately add conduction and valence band carriers that perturb optical reflectivity.Optical absorption associated with band filling and band gap narrowing is shown to explain the basic features found in recent measurements on an insulator (silicon nitride, Si3N4), a semiconductor(gallium arsenide,GaAs), and a metal (gold,Au), obtained with ?100 fs x-ray pulses at 500-2000 eV and probed with 800 nm laser pulses. In particular GaAs exhibits an abrupt drop in reflectivity, persisting only for a time comparable to the x-ray excitation pulse duration, consistent with prompt band gap narrowing.

Durbin, Stephen M.

2012-01-01T23:59:59.000Z

480

Chip-Scale Power Conversion for LED Lighting: Integrated Power Chip Converter for Solid-State Lighting  

SciTech Connect (OSTI)

ADEPT Project: Teledyne is developing cost-effective power drivers for energy-efficient LED lights that fit on a compact chip. These power drivers are important because they transmit power throughout the LED device. Traditional LED driver components waste energy and don't last as long as the LED itself. They are also large and bulky, so they must be assembled onto a circuit board separately which increases the overall manufacturing cost of the LED light. Teledyne is shrinking the size and improving the efficiency of its LED driver components by using thin layers of an iron magnetic alloy and new gallium nitride on silicon devices. Smaller, more efficient components will enable the drivers to be integrated on a single chip, reducing costs. The new semiconductors in Teledyne's drivers can also handle higher levels of power and last longer without sacrificing efficiency. Initial applications for Teledyne's LED power drivers include refrigerated grocery display cases and retail lighting.

None

2010-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxysulfide gd2o2s gallium" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Spectroscopic Analysis of Impurity Precipitates in CdS Films  

SciTech Connect (OSTI)

Impurities in cadmium sulfide (CdS) films are a concern in the fabrication of copper (indium, gallium) diselenide (CIGS) and cadmium telluride (CdTe) photovoltaic devices. Devices incorporating chemical-bath-deposited (CBD) CdS are comparable in quality to devices incorporating purer CdS films grown using vacuum deposition techniques, despite the higher impurity concentrations typically observed in the CBD CdS films. In this paper, we summarize and review the results of Fourier transform infrared (FTIR), Auger, electron microprobe, and X-ray photoelectron spectroscopic (XPS) analyses of the impurities in CBD CdS films. We show that these impurities differ as a function of substrate type and film deposition conditions. We also show that some of these impurities exist as 10{sup 2} micron-scale precipitates.

Webb, J. D.; Keane, J.; Ribelin, R.; Gedvilas, L.; Swartzlander, A.; Ramanathan, K.; Albin, D. S.; Noufi, R.

1999-10-31T23:59:59.000Z

482

Low-Temperature Relaxation Effects in Pulsed-Field Electron-Paramagnetic-Resonance Spectra of Rare-Earth Ions  

Science Journals Connector (OSTI)

Spin-lattice relaxation effects have been observed in the pulsed-field EPR spectra of rare earths in yttrium aluminum garnet, yttrium gallium garnet, and CaF2. An analysis has been developed that permits evaluation of the spin-lattice relaxation rates. It is shown that for a number of Kramers-doublet rare-earth ions, at frequencies above 70 Gc/sec and at liquid-helium temperatures, the only important relaxation mechanism is the direct spin-phonon interaction due to modulation of the crystalline field by lattice vibrations. The effects of paramagnetic impurity concentration and low-lying excited states on relaxation rates have also been observed, and, where appropriate, their influence is included in the analysis and discussion.

L. Rimai; R. W. Bierig; B. D. Silverman

1966-06-03T23:59:59.000Z

483

Layer-by-Layer Assembly of Sintered CdSexTe1–x Nanocrystal Solar Cells  

Science Journals Connector (OSTI)

solar cell; nanocrystal; CdTe; CdSexTe1?x; layer-by-layer; solution-processed; sintered ... For instance, devices fabricated using cadmium telluride (CdTe) and copper indium gallium selenide (CIGS) based active layers have exhibited laboratory scale power conversion efficiencies up to 17.3%(1) and 20.3%,(2) respectively, at commercial production costs as low as US $0.75/Watt. ... (20) More recently, the graded device concept has been extended to solution-processed organic solar cells, through a series of complementary donor materials(21) and to PbS quantum dot devices, where bandgap grading was accomplished through variation of the QD diameter. ...

Brandon I. MacDonald; Alessandro Martucci; Sergey Rubanov; Scott E. Watkins; Paul Mulvaney; Jacek J. Jasieniak

2012-06-12T23:59:59.000Z

484

Management of thyroid nodules: scanning techniques, thyroid suppressive therapy, and fine needle aspiration  

SciTech Connect (OSTI)

For the differentiation of benign from malignant thyroidal disease, ultrasound displays anatomic but not histologic features. Other visualization techniques can be used including isotope scanning (radioiodine, 99m technetium, 241 americium fluorescence, 131 cesium, 67 gallium, 75 selenomethionine, 201 thallium, 32 phosphorus, 99m Tc-bleomycin, 197 mercury, 133 xenon), thermography, x-ray techniques (plain films, computed tomographic scan, xeroradiography, chest x-ray barium swallow, lymphography, angiography), and thyroid hormone suppression. Needle biopsy can be done by core biopsy (Vim-Silverman and drill biopsy), large needle biopsy for histologic processing and fine needle aspiration for cytologic interpretation. The latter is the safest, most reliable, and most cost-effective technique currently available to differentiate between benign and malignant thyroidal disease and has great promise for the future.

Ashcraft, M.W.; Van Herle, A.J.

1981-03-01T23:59:59.000Z

485

I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO  

DOE Patents [OSTI]

A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.

Chen, Wen S. (Seattle, WA); Stewart, John M. (Seattle, WA)

1992-01-07T23:59:59.000Z

486

Micro-cooler enhancements by barrier interface analysis  

SciTech Connect (OSTI)

A novel gallium arsenide (GaAs) based micro-cooler design, previously analysed both experimentally and by an analytical Heat Transfer (HT) model, has been simulated using a self-consistent Ensemble Monte Carlo (EMC) model for a more in depth analysis of the thermionic cooling in the device. The best fit to the experimental data was found and was used in conjunction with the HT model to estimate the cooler-contact resistance. The cooling results from EMC indicated that the cooling power of the device is highly dependent on the charge distribution across the leading interface. Alteration of this charge distribution via interface extensions on the nanometre scale has shown to produce significant changes in cooler performance.

Stephen, A.; Dunn, G. M. [Department of Physics, University of Aberdeen, King's College, AB24 3UE Aberdeen (United Kingdom)] [Department of Physics, University of Aberdeen, King's College, AB24 3UE Aberdeen (United Kingdom); Glover, J.; Oxley, C. H. [Department of Engineering, De Montfort University, Gateway, LE1 9BH Leicester (United Kingdom)] [Department of Engineering, De Montfort University, Gateway, LE1 9BH Leicester (United Kingdom); Bajo, M. Montes; Kuball, M. [Center for Device Thermography and Reliability, H. H. Wills Physics Laboratory, University of Bristol, BS8 1TL Bristol (United Kingdom)] [Center for Device Thermography and Reliability, H. H. Wills Physics Laboratory, University of Bristol, BS8 1TL Bristol (United Kingdom); Cumming, D. R. S.; Khalid, A. [School of Engineering, University of Glasgow, Rankine Building, G12 8LT Glasgow (United Kingdom)] [School of Engineering, University of Glasgow, Rankine Building, G12 8LT Glasgow (United Kingdom)

2014-02-15T23:59:59.000Z

487

FTIR and FT-PL Spectroscopic Analysis of TPV Materials and Devices  

SciTech Connect (OSTI)

Impurities in cadmium sulfide (CdS) films are a concern in the fabrication of copper (indium, gallium) diselenide (CIGS) and cadmium telluride (CdTe) photovoltaic devices. Devices incorporating chemical-bath-deposited (CBD) CdS are comparable in quality to devices incorporating purer CdS films grown using vacuum deposition techniques, despite the higher impurity concentrations typically observed in the CBD CdS films. In this paper, we summarize and review the results of Fourier transform infrared (FTIR), Auger, electron microprobe, and X-ray photoelectron spectroscopic (XPS) analyses of the impurities in CBD CdS films. We show that these impurities differ as a function of substrate type and film deposition conditions. We also show that some of these impurities exist as 102 micron-scale precipitates.

Webb, J. D.; Gedvilas, L. M.; Olson, M. R.; Wu, X.; Duda, A.; Wanlass, M. W.; Jones, K. M.

1998-10-28T23:59:59.000Z

488

Voltage Regulator Chip: Power Supplies on a Chip  

SciTech Connect (OSTI)

ADEPT Project: CPES at Virginia Tech is finding ways to save real estate on a computer's motherboard that could be used for other critical functions. Every computer processor today contains a voltage regulator that automatically maintains a constant level of electricity entering the device. These regulators contain bulky components and take up about 30% of a computer's motherboard. CPES at Virginia Tech is developing a voltage regulator that uses semiconductors made of gallium nitride on silicon (GaN-on-Si) and high-frequency soft magnetic material. These materials are integrated on a small, 3D chip that can handle the same amount of power as traditional voltage regulators at 1/10 the size and with improved efficiency. The small size also frees up to 90% of the motherboard space occupied by current voltage regulators.

None

2010-09-01T23:59:59.000Z

489

Extraction of trace metals from fly ash  

DOE Patents [OSTI]

A process for recovering silver, gallium and/or other trace metals from a fine grained industrial fly ash associated with a process for producing phosphorous, the fly ash having a silicate base and containing surface deposits of the trace metals as oxides, chlorides or the like, with the process being carried out by contacting the fly ash with AlCl.sub.3 in an alkali halide melt to react the trace metals with the AlCl.sub.3 to form compositions soluble in the melt and a residue containing the silicate and aluminum oxide or other aluminum precipitate, and separating the desired trace metal or metals from the melt by electrolysis or other separation techniques.

Blander, Milton (Palos Park, IL); Wai, Chien M. (Moscow, ID); Nagy, Zoltan (Woodridge, IL)

1984-01-01T23:59:59.000Z

490

Adaptation of thin-film photovoltaic technology for use in space  

SciTech Connect (OSTI)

The anticipated deployment of large numbers of satellites in low earth orbit (LEO) for global telecommunications networks renews interest in producing solar power systems that are lightweight, robust, resistant to radiation damage, and relatively inexpensive. Promising near term thin-film candidates are amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). The authors discuss the modifications that are necessary to adapt terrestrial thin-film technology for use in space. The authors characterize expected module performance and present results of tests performed on sample cells. They consider the possibility of achieving aggressive cost, weight, and performance targets through the use of thin-film photovoltaic (PV) technology.

Fairbanks, E.S.; Gates, M.T. [Boeing Commercial Space Co., Seattle, WA (United States)

1997-12-31T23:59:59.000Z

491

The Sun's Interior Metallicity Constrained by Neutrinos  

E-Print Network [OSTI]

Observed solar neutrino fluxes are employed to constrain the interior composition of the Sun. Including the effects of neutrino flavor mixing, the results from Homestake, Sudbury, and Gallium experiments constrain the Mg, Si, and Fe abundances in the solar interior to be within a factor 0.89 to 1.34 of the surface values with 68% confidence. If the O and/or Ne abundances are increased in the interior to resolve helioseismic discrepancies with recent standard solar models, then the nominal interior Mg, Si, and Fe abundances are constrained to a range of 0.83 to 1.24 relative to the surface. Additional research is needed to determine whether the Sun's interior is metal poor relative to its surface.

Guillermo Gonzalez

2006-05-25T23:59:59.000Z

492

Pressure dependence of deep levels of the As antisite, the Ga-vacancy–As-interstitial pair, and of the stable and metastable states of EL2  

Science Journals Connector (OSTI)

We report density-functional theory calculations of the tetrahedral, isolated arsenic antisite (AsGa) in GaAs and of its metastable structure, gallium-vacancy–arsenic-interstitial pair (VGaAsi). In order to determine the pressure dependence of the defect levels, the self-consistent Green-function method is applied. The calculated results are in agreement with experimental data on the stable and metastable states of EL2. This implies that the stable state of EL2 is indeed well described by the properties of the isolated As antisite. Furthermore, the results support the identification of the metastable state of EL2 with the VGaAsi pair and identify the symmetry of the pressure-induced defect level.

Christine Ziegler; Udo Scherz; Matthias Scheffler

1993-06-15T23:59:59.000Z

493

Cermet anode with continuously dispersed alloy phase and process for making  

DOE Patents [OSTI]

Cermet electrode compositions and methods for making are disclosed which comprise NiO--NiFe.sub.2 O.sub.4 --Cu--Ni. Addition of an effective amount of a metallic catalyst/reactant to a composition of a nickel/iron/oxide, NiO, copper, and nickel produces a stable electrode having significantly increased electrical conductivity. The metallic catalyst functions to disperse the copper and nickel as an alloy continuously throughout the oxide phase of the cermet to render the electrode compositon more highly electrically conductive than were the third metal not present in the base composition. The third metal is preferably added to the base composition as elemental metal and includes aluminum, magnesium, sodium and gallium. The elemental metal is converted to a metal oxide during the sintering process.

Marschman, Steven C. (Richland, WA); Davis, Norman C. (Richland, WA)

1989-01-01T23:59:59.000Z

494

Novel EBSD preparation method for Cu/Sn microbumps using a focused ion beam  

SciTech Connect (OSTI)

We proposed a novel technique developed from focused ion beam (FIB) polishing for sample preparation of electron backscatter diffraction (EBSD) measurement. A low-angle incident gallium ion beam with a high acceleration voltage of 30 kV was used to eliminate the surface roughness of cross-sectioned microbumps resulting from mechanical polishing. This work demonstrates the application of the FIB polishing technique to solders for a high-quality sample preparation for EBSD measurement after mechanical polishing. - Highlights: Black-Right-Pointing-Pointer The novel FIB technique of sample preparation is fast, effective and low-cost. Black-Right-Pointing-Pointer It can enhance the process precision to the specific area of the sample. Black-Right-Pointing-Pointer It is convenient for analyzing the metallurgy of the microbump in 3DIC packaging. Black-Right-Pointing-Pointer The EBSD image quality can be enhanced by just using a common FIB instrument.

Liu, Tao-Chi; Chen, Chih [National Chiao Tung University, Department of Materials Science and Engineering, Hsinchu 30010, Taiwan, ROC (China)] [National Chiao Tung University, Department of Materials Science and Engineering, Hsinchu 30010, Taiwan, ROC (China); Chiu, Kuo-Jung [Integrated Service Technology Inc., No. 19, Pu-ding Rd., Hsinchu 30072, Taiwan, ROC (China)] [Integrated Service Technology Inc., No. 19, Pu-ding Rd., Hsinchu 30072, Taiwan, ROC (China); Lin, Han-Wen [National Chiao Tung University, Department of Materials Science and Engineering, Hsinchu 30010, Taiwan, ROC (China)] [National Chiao Tung University, Department of Materials Science and Engineering, Hsinchu 30010, Taiwan, ROC (China); Kuo, Jui-Chao, E-mail: jckuo@mail.ncku.edu.tw [National Cheng Kung University, Department of Materials Science and Engineering, Tainan, Taiwan, ROC (China)] [National Cheng Kung University, Department of Materials Science and Engineering, Tainan, Taiwan, ROC (China)

2012-12-15T23:59:59.000Z

495

Photopolymerization of Self-Assembled Monolayers of Diacetylenic Alkylphosphonic Acids on Group-III Nitride Substrates  

Science Journals Connector (OSTI)

(1, 4-7) In addition, the selectivity and sensitivity of a nitrides-based sensor can be tailored by modifying the nitride’s surface with a thin layer that selectively recognizes chemical species of interest. ... However, ODPA SAMs desorbed from GaN substrates upon immersion in aqueous solution, especially in basic solution, probably reflecting the high solubility of deprotonated ODPA in the solution,(18) electrostatic repulsion between the negatively charged ODPA and substrate surface,(18) and/or the dissolution of the gallium oxide layer. ... Water contact angles on group-III nitride samples were measured using a PG-1 pocket contact angle goniometer by reading contact angle values of the two sides of a drop (2 ?L) within 30 s after deposition of the drop. ...

Feng Li; Evgeniy Shishkin; Michael A. Mastro; Jennifer K. Hite; Charles R. Eddy, Jr.; J. H. Edgar; Takashi Ito

2010-06-04T23:59:59.000Z

496

Low-Cost Label-Free Electrical Detection of Artificial DNA Nanostructures Using Solution-Processed Oxide Thin-Film Transistors  

Science Journals Connector (OSTI)

As stabilizers, monoethanolamine (MEA) and acetic acid (CH3COOH) were dropped to ameliorate the solubility of the precursors and make a homogeneous IGZO solution, respectively. ... Prepared DNA-covered mica sheet was attached onto the metal puck using instant glue and 5 ?L of DX solution, 30 ?L of 1 × TAE/Mg2+ buffer was dropped onto the mica and 10 ?L of 1 × TAE/Mg2+ buffer was mounted onto the AFM tip (A NP-S oxide-sharpened silicon nitride tip). ... The original influence of water on the back-channel of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors was studied in various relative humidity environments. ...

Si Joon Kim; Joohye Jung; Keun Woo Lee; Doo Hyun Yoon; Tae Soo Jung; Sreekantha Reddy Dugasani; Sung Ha Park; Hyun Jae Kim

2013-09-27T23:59:59.000Z

497

High-Efficiency Nitride-Based Photonic Crystal Light Sources  

Broader source: Energy.gov [DOE]

The University of California Santa Barbara (UCSB) is maximizing the efficiency of a white LED by enhancing the external quantum efficiency using photonic crystals to extract light that would normally be confined in a conventional structure. Ultimate efficiency can only be achieved by looking at the internal structure of light. To do this, UCSB is focusing on maximizing the light extraction efficiency and total light output from light engines driven by Gallium Nitride (GaN)-based LEDs. The challenge is to engineer large overlap (interaction) between modes and photonic crystals. The project is focused on achieving high extraction efficiency in LEDs, controlled directionality of emitted light, integrated design of vertical device structure, and nanoscale patterning of lateral structure.

498

Theory of Brillouin scattering from opaque media  

Science Journals Connector (OSTI)

The general theory of Brillouin scattering from the surfaces of opaque media is developed using a total field solution approach. Acoustical modes appropriate to a stress-free surface are found from solutions to the acoustical-wave equation and boundary conditions for a finite isotropic medium. Two light-scattering mechanisms, namely, the surface corrugation and bulk elasto-optical effects, were analyzed by deriving optical fields which satisfy both the acousto-optically driven wave equation and the electromagnetic boundary conditions. The special case for a metal of scattering by acoustically created conductivity fluctuations was also investigated in a similar way. The Brillouin spectrum was obtained by summing the scattering from the individual acoustical modes over the density of phonon states. Excellent agreement was obtained with experiment for Brillouin scattering from the metals gallium (liquid) and aluminum (solid).

N. L. Rowell and G. I. Stegeman

1978-09-15T23:59:59.000Z

499

Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters  

SciTech Connect (OSTI)

Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

None

2012-02-13T23:59:59.000Z

500

Crystal Structure and Spectroscopic Characterization of a Luminescent Europium Chelate  

Science Journals Connector (OSTI)

This ligation removes the last water bound to the primary coordination sphere of europium, resulting in no waters bound to the lanthanide. ... 6,11-13 Their utility arises because of the lanthanide's unusual spectroscopic emission characteristics, which include millisecond lifetime, spiked emission peaks (150 nm), potentially high quantum yields (?1), and excellent solubility. ... A pulsed nitrogen laser (337 nm, 5 ns pulse-width, 40 Hz repetition rate; Laser Photonics) excited the Eu-DTPA-cs124 sample, and emission was passed through a double-monochromator (SPEX 1680B, blaze = 500 nm, f/4) and detected by a gallium arsenide photomultiplier tube operating in photon-counting mode (Hamamatsu R943-02) with associated electronics (MITEQ 500 MHz preamplifier; Ortec 854 gated discriminator; Canberra FMS multichannel scalar with 2 ?s time resolution). ...

Paul R. Selvin; Jaru Jancarik; Min Li; Li-Wei Hung

1996-01-31T23:59:59.000Z