National Library of Energy BETA

Sample records for oxide chemical vapor

  1. Chemical vapor deposition of fluorine-doped zinc oxide

    DOE Patents [OSTI]

    Gordon, Roy G. (Cambridge, MA); Kramer, Keith (Avon Lake, OH); Liang, Haifan (Santa Clara, CA)

    2000-06-06

    Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

  2. Oxidative chemical vapor deposition of conductive polymers for use in novel photovoltaic device architectures

    E-Print Network [OSTI]

    Howden, Rachel M. (Rachel Mary)

    2013-01-01

    The conductive polymer poly(3,4-ethylenedioxythiophene), (PEDOT), deposited via oxidative chemical vapor deposition (oCVD) has been investigated for use in organic electronic devices. The oCVD process as well as the ...

  3. Aerosol chemical vapor deposition of metal oxide films

    DOE Patents [OSTI]

    Ott, K.C.; Kodas, T.T.

    1994-01-11

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

  4. Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby

    DOE Patents [OSTI]

    Zhang, Ji-Guang (Golden, CO); Tracy, C. Edwin (Golden, CO); Benson, David K. (Golden, CO); Turner, John A. (Littleton, CO); Liu, Ping (Lakewood, CO)

    2000-01-01

    A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

  5. On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.

    SciTech Connect (OSTI)

    Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W. (PPF Industries, Pittsburgh, PA)

    2006-11-01

    Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are reached concerning the factors affecting the growth rate in on-line APCVD reactors. In addition, a substantial body of data was generated that can be used to model many different industrial tin oxide coating processes. These data include the most extensive compilation of thermochemistry for gas-phase tin-containing species as well as kinetic expressions describing tin oxide growth rates over a wide range of temperatures, pressures, and reactant concentrations.

  6. Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowires via Chemical Vapor Transport

    E-Print Network [OSTI]

    Johnson, M.C.; Aloni, S.; McCready, D.E.; Bourret-Courchesne, E.D.

    2006-01-01

    6 Growth Rate (um/hr) Vapor Pressure (Torr) In2O3 Ga2O3 SnO2Rate (µm/hr) Metal Vapor Pressure (Torr) Crystalline phaseto the source metal vapor pressure. Initial experiments show

  7. Solar Energy Materials & Solar Cells 91 (2007) 924930 Plasma-enhanced chemical vapor deposition of zinc oxide at

    E-Print Network [OSTI]

    Hicks, Robert F.

    2007-01-01

    - enhanced chemical vapor deposition (PECVD) [4], ex- panding thermal plasma [5], and vacuum arc depositionSolar Energy Materials & Solar Cells 91 (2007) 924­930 Plasma-enhanced chemical vapor deposition 2007; accepted 14 February 2007 Available online 6 April 2007 Abstract The plasma-enhanced chemical

  8. In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum

    E-Print Network [OSTI]

    In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on Ga 26 June 2008; published online 21 July 2008 In situ atomic-layer deposition ALD of Al2O3 on p­4 Recently, many ex situ methods such as atomic-layer deposition ALD of high-k on GaAs have achieved success

  9. Volatile organometallic complexes suitable for use in chemical vapor depositions on metal oxide films

    DOE Patents [OSTI]

    Giolando, Dean M.

    2003-09-30

    Novel ligated compounds of tin, titanium, and zinc are useful as metal oxide CVD precursor compounds without the detriments of extreme reactivity yet maintaining the ability to produce high quality metal oxide coating by contact with heated substrates.

  10. Vapor phase modifiers for oxidative coupling

    DOE Patents [OSTI]

    Warren, Barbara K. (Charleston, WV)

    1991-01-01

    Volatilized metal compounds retard vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

  11. X-ray photoelectron spectroscopy study on the chemistry involved in tin oxide film growth during chemical vapor deposition processes

    SciTech Connect (OSTI)

    Mannie, Gilbere J. A.; Gerritsen, Gijsbert; Abbenhuis, Hendrikus C. L.; Deelen, Joop van; Niemantsverdriet, J. W.; Thuene, Peter C. [Materials innovation institute (M2i), P. O. Box 5008, 2600 GA Delft (Netherlands) and Physical Chemistry of Surfaces, Eindhoven University of Technology, P. O. Box 513, 5600 MB Eindhoven (Netherlands); Hybrid Catalysis BV, P. O. Box 513, 5600 MB Eindhoven (Netherlands); TNO Science and Industry, P. O. Box 6235, 5600 HE Eindhoven (Netherlands); Physical Chemistry of Surfaces, Eindhoven University of Technology, P. O. Box 513, 5600 MB Eindhoven (Netherlands)

    2013-01-15

    The chemistry of atmospheric pressure chemical vapor deposition (APCVD) processes is believed to be complex, and detailed reports on reaction mechanisms are scarce. Here, the authors investigated the reaction mechanism of monobutyl tinchloride (MBTC) and water during SnO{sub 2} thin film growth using x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). XPS results indicate an acid-base hydrolysis reaction mechanism, which is tested with multilayer experiments, demonstrating self-terminating growth. In-house developed TEM wafers are used to visualize nucleation during these multilayer experiments, and results are compared with TEM results of APCVD samples. Results show almost identical nucleation behavior implying that their growth mechanism is identical. Our experiments suggest that in APCVD, when using MBTC and water, SnO{sub 2} film growth occurs via a heterolytic bond splitting of the Sn-Cl bonds without the need to invoke gas-phase radical or coordination chemistry of the MBTC precursor.

  12. Vapor phase modifiers for oxidative coupling

    DOE Patents [OSTI]

    Warren, B.K.

    1991-12-17

    Volatilized metal compounds are described which are capable of retarding vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

  13. Atmospheric pressure chemical vapor deposition of transparent conducting films of fluorine doped zinc oxide and their application

    E-Print Network [OSTI]

    crystal flat panel displays, energy efficient windows, gas sensors, surface acoustic wave devices loss or diffusion, which can lead to degra- dation in solar cell efficiency. Zinc oxide is more stable conducting oxides. This suggests zinc oxide may lead to higher solar cell efficiency than tin oxide

  14. Chemical vapor deposition of functionalized isobenzofuran polymers

    E-Print Network [OSTI]

    Olsson, Ylva Kristina

    2007-01-01

    This thesis develops a platform for deposition of polymer thin films that can be further tailored by chemical surface modification. First, we explore chemical vapor deposition of functionalized isobenzofuran films using ...

  15. Chemical vapor deposition of antimicrobial polymer coatings

    E-Print Network [OSTI]

    Martin, Tyler Philip, 1977-

    2007-01-01

    There is large and growing interest in making a wide variety of materials and surfaces antimicrobial. Initiated chemical vapor deposition (iCVD), a solventless low-temperature process, is used to form thin films of polymers ...

  16. Chemical vapor infiltration using microwave energy

    DOE Patents [OSTI]

    Devlin, David J. (Los Alamos, NM); Currier, Robert P. (Los Alamos, NM); Laia, Jr., Joseph R. (Los Alamos, NM); Barbero, Robert S. (Santa Cruz, NM)

    1993-01-01

    A method for producing reinforced ceramic composite articles by means of chemical vapor infiltration and deposition in which an inverted temperature gradient is utilized. Microwave energy is the source of heat for the process.

  17. Chemical vapor deposition coating for micromachines

    SciTech Connect (OSTI)

    MANI,SEETHAMBAL S.; FLEMING,JAMES G.; SNIEGOWSKI,JEFFRY J.; DE BOER,MAARTEN P.; IRWIN,LAWRENCE W.; WALRAVEN,JEREMY A.; TANNER,DANELLE M.; DUGGER,MICHAEL T.

    2000-04-21

    Two major problems associated with Si-based MEMS devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, the authors will present a process used to selectively coat MEMS devices with tungsten using a CVD (Chemical Vapor Deposition) process. The selective W deposition process results in a very conformal coating and can potentially solve both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through silicon reduction of WF{sub 6}, which results in a self-limiting reaction. The selective deposition of W only on polysilicon surfaces prevents electrical shorts. Further, the self-limiting nature of this selective W deposition process ensures the consistency necessary for process control. Selective tungsten is deposited after the removal of the sacrificial oxides to minimize process integration problems. This tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. Results from tungsten deposition on MEMS structures with dimples will be presented. The effect of wet and vapor phase cleanings prior to the deposition will be discussed along with other process details. The W coating improved wear by orders of magnitude compared to uncoated parts. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable.

  18. Plasma enhanced chemical vapor deposited silicon coatings on Mg alloy for biomedical application

    E-Print Network [OSTI]

    Zheng, Yufeng

    Plasma enhanced chemical vapor deposited silicon coatings on Mg alloy for biomedical application M was prepared by plasma enhanced chemical vapor deposition (PECVD) of SiH4 on WE43 alloy for biomedical [6], magnetron sputtering [7], alkaline heat treatment [8], micro-arc oxidation [9

  19. Chemical vapor deposition of mullite coatings

    DOE Patents [OSTI]

    Sarin, Vinod (Lexington, MA); Mulpuri, Rao (Boston, MA)

    1998-01-01

    This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

  20. A Multiscale Simulator for Low Pressure Chemical Vapor Deposition

    E-Print Network [OSTI]

    A Multiscale Simulator for Low Pressure Chemical Vapor Deposition Matthias K. Gobbert Institute-6206 ABSTRACT An integrated simulator for chemical vapor deposition is introduced. In addition to a reactor

  1. Chemical vapor deposition of epitaxial silicon

    DOE Patents [OSTI]

    Berkman, Samuel (Florham Park, NJ)

    1984-01-01

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  2. Chemical vapor detection with a multispectral thermal imager

    E-Print Network [OSTI]

    Chang, Chein-I

    Chemical vapor detection with a multispectral thermal imager Mark 1. G. Aithouse, MEMBER SPIE U.S. Army Chemical Research Development and Engineering Center SMCCR-DDT Aberdeen Proving Ground, Maryland algorithm 7. Conclusions 8. Acknowledgments 9. References 1. INTRODUCTION Detection of chemical vapor clouds

  3. Chemical vapor deposition of group IIIB metals

    DOE Patents [OSTI]

    Erbil, A.

    1989-11-21

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

  4. Catalytic Reactor For Oxidizing Mercury Vapor

    DOE Patents [OSTI]

    Helfritch, Dennis J. (Baltimore, MD)

    1998-07-28

    A catalytic reactor (10) for oxidizing elemental mercury contained in flue gas is provided. The catalyst reactor (10) comprises within a flue gas conduit a perforated corona discharge plate (30a, b) having a plurality of through openings (33) and a plurality of projecting corona discharge electrodes (31); a perforated electrode plate (40a, b, c) having a plurality of through openings (43) axially aligned with the through openings (33) of the perforated corona discharge plate (30a, b) displaced from and opposing the tips of the corona discharge electrodes (31); and a catalyst member (60a, b, c, d) overlaying that face of the perforated electrode plate (40a, b, c) opposing the tips of the corona discharge electrodes (31). A uniformly distributed corona discharge plasma (1000) is intermittently generated between the plurality of corona discharge electrode tips (31) and the catalyst member (60a, b, c, d) when a stream of flue gas is passed through the conduit. During those periods when corona discharge (1000) is not being generated, the catalyst molecules of the catalyst member (60a, b, c, d) adsorb mercury vapor contained in the passing flue gas. During those periods when corona discharge (1000) is being generated, ions and active radicals contained in the generated corona discharge plasma (1000) desorb the mercury from the catalyst molecules of the catalyst member (60a, b, c, d), oxidizing the mercury in virtually simultaneous manner. The desorption process regenerates and activates the catalyst member molecules.

  5. Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic integration

    E-Print Network [OSTI]

    Kimerling, Lionel C.

    Polycrystalline germanium (poly-Ge) grown on amorphous Si (a-Si) by ultra-high vacuum chemical vapor deposition (UHVCVD) over oxide barriers at low temperatures (Tles450degC) exhibits a larger grain size and lower defect ...

  6. Advanced Chemical Heat Pumps Using Liquid-Vapor Reactions 

    E-Print Network [OSTI]

    Kirol, L.

    1987-01-01

    HEAT PUMPS USING LIQUID-VAPOR REACTIONS LANCE KIROL Senior Program Specialist Idaho National Engineering Laboratory Idaho Falls, Idaho . ABSTRACT Chemical heat pumps utilizing liquid-vapor reactions can be configured in forms analogous... to electric drive vapor-compression heat pumps and heat activated absorption heat pumps. Basic thermodynamic considerations eliminate some heat pumps and place restrictive working fluid requirements on others, but two thermodynam ically feasible systems...

  7. Initiated chemical vapor deposition of functional polyacrylic thin films

    E-Print Network [OSTI]

    Mao, Yu, 1975-

    2005-01-01

    Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

  8. Chemical vapor deposition of organosilicon and sacrificial polymer thin films

    E-Print Network [OSTI]

    Casserly, Thomas Bryan

    2005-01-01

    Chemical vapor deposition (CVD) produced films for a wide array of applications from a variety of organosilicon and organic precursors. The structure and properties of thin films were controlled by varying processing ...

  9. Photoinitiated chemical vapor depostion [sic] : mechanism and applications

    E-Print Network [OSTI]

    Baxamusa, Salmaan Husain

    2009-01-01

    Photoinitiated chemical vapor deposition (piCVD) is developed as a simple, solventless, and rapid method for the deposition of swellable hydrogels and functional hydrogel copolymers. Mechanistic experiments show that piCVD ...

  10. All graphene electromechanical switch fabricated by chemical vapor deposition

    E-Print Network [OSTI]

    Milaninia, Kaveh M.

    We demonstrate an electromechanical switch comprising two polycrystalline graphene films; each deposited using ambient pressure chemical vapor deposition. The top film is pulled into electrical contact with the bottom film ...

  11. PROJECT PROFILE: Stable Perovskite Solar Cells via Chemical Vapor Deposition

    Broader source: Energy.gov [DOE]

    This project is focused on novel approaches to remove risk related to the development of hybrid perovskite solar cells (HPSCs). Researchers will synthesize a new and chemically stable hybrid organic-inorganic perovskite that eliminates decomposition of the absorber layer upon exposure to water vapor, which is a chief obstacle to widespread use of HPSC technology. They will also demonstrate a unique and industrially-scalable chemical vapor deposition method without halides or iodine, which are the main contributors to perovskite degradation.

  12. Improved sensor selectivity for chemical vapors using organic thin-film transistors

    E-Print Network [OSTI]

    Royer, James Edward

    2012-01-01

    2012, American Chemical Society 3.1 Abstract Air-stablethe American Chemical Society 4.1 Abstract Direct selectiveChemical Vapor Detection Abstract

  13. Method of physical vapor deposition of metal oxides on semiconductors

    DOE Patents [OSTI]

    Norton, David P. (Knoxville, TN)

    2001-01-01

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  14. Fabrication of solid oxide fuel cell by electrochemical vapor deposition

    DOE Patents [OSTI]

    Brian, Riley (Willimantic, CT); Szreders, Bernard E. (Oakdale, CT)

    1989-01-01

    In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (approximately 1100.degree.-1300.degree. C.) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20-50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

  15. Fabrication of solid oxide fuel cell by electrochemical vapor deposition

    DOE Patents [OSTI]

    Riley, B.; Szreders, B.E.

    1988-04-26

    In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (/approximately/1100/degree/ /minus/ 1300/degree/C) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20--50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

  16. AN IMPROVED METHOD FOR TRANSFERRING GRAPHENE GROWN BY CHEMICAL VAPOR

    E-Print Network [OSTI]

    AN IMPROVED METHOD FOR TRANSFERRING GRAPHENE GROWN BY CHEMICAL VAPOR DEPOSITION YUJIE REN Key Laboratory of Semiconductor Materials and Applications Xiamen University, Xiamen 361005, P. R In this paper, we report an improved transfer of graphene by directly picking up the graphene with target

  17. Amine functionalization by initiated chemical vapor deposition (iCVD) for interfacial adhesion and film cohesion

    E-Print Network [OSTI]

    Xu, Jingjing, Ph. D. Massachusetts Institute of Technology

    2011-01-01

    Amine functional polymer thin films provide a versatile platform for subsequent functionalization because of their diverse reactivity. Initiated chemical vapor deposition (iCVD) is a polymer chemical vapor deposition ...

  18. Influence of process variables on electron beam chemical vapor deposition of platinum

    E-Print Network [OSTI]

    Wang, Zhong L.

    Influence of process variables on electron beam chemical vapor deposition of platinum D. Beaulieu; accepted 8 August 2005; published 22 September 2005 Electron beam chemical vapor deposition was performed. DOI: 10.1116/1.2050672 I. INTRODUCTION Electron beam chemical vapor deposition EBCVD is a technology

  19. Optical characterization of InN layers grown by high-pressure chemical vapor deposition

    E-Print Network [OSTI]

    Dietz, Nikolaus

    Optical characterization of InN layers grown by high-pressure chemical vapor deposition M. Alevli properties of InN layers grown by high-pressure chemical vapor deposition have been studied. Raman, infrared at elevated temperatures, a high-pressure chemical vapor deposition HPCVD system has been established at GSU.6

  20. A HOMOGENIZATION TECHNIQUE FOR THE BOLTZMANN EQUATION FOR LOW PRESSURE CHEMICAL VAPOR DEPOSITION 1

    E-Print Network [OSTI]

    Markowich, Peter A.

    A HOMOGENIZATION TECHNIQUE FOR THE BOLTZMANN EQUATION FOR LOW PRESSURE CHEMICAL VAPOR DEPOSITION 1 the approach. The setup models low pressure chemical vapor deposition processes in the manufacturing. Low pressure chemical vapor deposition is used in the manufactur- ing of integrated circuits

  1. Narrowband fluorescent nanodiamonds produced from chemical vapor deposition films

    E-Print Network [OSTI]

    Neu, Elke; Gross, Elke; Hepp, Christian; Steinmetz, David; Zscherpel, Elisabeth; Ghodbane, Slimane; Sternschulte, Hadwig; Steinmueller-Nethl, Doris; Liang, Yuejiang; Krueger, Anke; Becher, Christoph

    2011-01-01

    We report on the production of nanodiamonds (NDs) with 70-80 nm size via bead assisted sonic disintegration (BASD) of a polycrystalline chemical vapor deposition (CVD) film. The NDs display high crystalline quality as well as intense narrowband (7 nm) room temperature luminescence at 738 nm due to in situ incorporated silicon vacancy (SiV) centers. The fluorescence properties at room and cryogenic temperatures indicate that the NDs are, depending on preparation, applicable as single photon sources or as fluorescence labels.

  2. Narrowband fluorescent nanodiamonds produced from chemical vapor deposition films

    E-Print Network [OSTI]

    Elke Neu; Carsten Arend; Felix Guldner; Elke Gross; Christian Hepp; David Steinmetz; Elisabeth Zscherpel; Slimane Ghodbane; Hadwig Sternschulte; Doris Steinmueller-Nethl; Yuejiang Liang; Anke Krueger; Christoph Becher

    2011-05-24

    We report on the production of nanodiamonds (NDs) with 70-80 nm size via bead assisted sonic disintegration (BASD) of a polycrystalline chemical vapor deposition (CVD) film. The NDs display high crystalline quality as well as intense narrowband (7 nm) room temperature luminescence at 738 nm due to in situ incorporated silicon vacancy (SiV) centers. The fluorescence properties at room and cryogenic temperatures indicate that the NDs are, depending on preparation, applicable as single photon sources or as fluorescence labels.

  3. Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition

    E-Print Network [OSTI]

    Dietz, Nikolaus

    grown by high-pressure chemical vapor deposition have been studied. Atomic hydrogen cleaning produced and heterostructures--which can be accomplished by low- pressure metalorganic chemical vapor deposition MOCVD --the- rium vapor pressure of nitrogen during growth. This requires different approaches in growing structures

  4. Chemical Vapor Deposition Growth of 5 mm Hexagonal Single-Crystal Graphene from Ethanol

    E-Print Network [OSTI]

    Maruyama, Shigeo

    Chemical Vapor Deposition Growth of 5 mm Hexagonal Single-Crystal Graphene from Ethanol Xiao Chen1 as large as 5 mm can be synthesized from ethanol via chemical vapor deposition (CVD). Key conditions for the successful reduction in nucleation density are extremely low partial pressure of ethanol vapor and pre

  5. Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition

    SciTech Connect (OSTI)

    Nam, Youngwoo, E-mail: youngwoo.nam@chalmers.se [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Sun, Jie; Lindvall, Niclas; Yurgens, August [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Jae Yang, Seung; Rae Park, Chong [Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of); Woo Park, Yung [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2014-01-13

    We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.

  6. Roles of Oxygen and Water Vapor in the Oxidation of Halogen Terminated Ge(111) Surfaces

    SciTech Connect (OSTI)

    Sun, Shiyu; /Stanford U., Phys. Dept.; Sun, Yun; Liu, Zhi; Lee, Dong-Ick; Pianette, Piero; /SLAC, SSRL

    2006-12-18

    The initial stage of the oxidation of Cl and Br terminated Ge(111) surfaces is studied using photoelectron spectroscopy. The authors perform controlled experiments to differentiate the effects of different factors in oxidation, and find that water vapor and oxygen play different roles. Water vapor effectively replaces the halogen termination layers with the hydroxyl group, but does not oxidize the surfaces further. In contrast, little oxidation is observed for Cl and Br terminated surfaces with dry oxygen alone. However, with the help of water vapor, oxygen oxidizes the surface by breaking the Ge-Ge back bonds instead of changing the termination layer.

  7. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

    DOE Patents [OSTI]

    Liu, David K. (San Pablo, CA)

    1992-01-01

    Method and apparatus for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure.

  8. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

    DOE Patents [OSTI]

    Miller, Joel S. (Salt Lake City, UT); Pokhodnya, Kostyantyn I. (Salt Lake City, UT)

    2003-12-09

    A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

  9. Iron (III) Chloride doping of large-area chemical vapor deposition graphene

    E-Print Network [OSTI]

    Song, Yi, S.M. Massachusetts Institute of Technology

    2013-01-01

    Chemical doping is an effective method of reducing the sheet resistance of graphene. This thesis aims to develop an effective method of doping large area Chemical Vapor Deposition (CVD) graphene using Iron (III) Chloride ...

  10. Electronic Properties of Large-scale Graphene Films Chemical Vapor Synthesized on Nickel and on Copper

    E-Print Network [OSTI]

    Chen, Yong P.

    transport properties of graphene films grown on Ni and Cu. Sample Preparation The synthesis of graphene film1 Electronic Properties of Large-scale Graphene Films Chemical Vapor Synthesized on Nickel of large scale graphene films grown by chemical vapor synthesis on Ni and Cu, and then transferred to SiO2

  11. Chemically vapor deposited diamond-tipped one-dimensional nanostructures and nanodiamondsilicananotube composites

    E-Print Network [OSTI]

    Wilamowski, Bogdan Maciej

    Chemically vapor deposited diamond-tipped one-dimensional nanostructures and nanodiamond vapor deposition Composite thin films of nanodiamond and silica nanotubes were synthesized by means with nanodiamond particles. SEM, Raman spectroscopy, and EDX were used to analyze the composite. Wet chemical

  12. OPTIMAL DESIGN OF A HIGH PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION REACTOR

    E-Print Network [OSTI]

    OPTIMAL DESIGN OF A HIGH PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION REACTOR K.J. BACHMANN simulations as a fundamental design tool in developing a new prototype high pressure organometallic chemical vapor deposition (HPOMCVD) reactor for use in thin film crystal growth. The advantages of such a reactor

  13. Selective Growth of Straight Carbon Nanotubes by Low-Pressure Thermal Chemical Vapor Deposition

    E-Print Network [OSTI]

    Hasegawa, Shuji

    Selective Growth of Straight Carbon Nanotubes by Low-Pressure Thermal Chemical Vapor Deposition) were grown by low-pressure thermal chemical vapor deposition using pure ethylene. It was found preferentially bridged between Fe nanoparticles under a low pressure of 100 Pa. Moreover, utilizing this method

  14. Alcohol chemical vapor deposition growth of millimeter-sized single-crystal of graphene

    E-Print Network [OSTI]

    Maruyama, Shigeo

    Alcohol chemical vapor deposition growth of millimeter-sized single-crystal of graphene Sungjin Kim@photon,t,u-tokyo.ac.jp Abstract: The growth of large-sized single crystalline graphene with mono layer is necessary for large-scale integration of graphene devices. Ethanol as a precursor has proven effective in the chemical vapor deposition

  15. Tunneling characteristics in chemical vapor deposited graphene hexagonal boron nitride graphene junctions

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Tunneling characteristics in chemical vapor deposited graphene ­ hexagonal boron nitride ­ graphene junctions T. Roy1 , L. Liu2 , S. de la Barrera,3 B. Chakrabarti1,4 , Z. R. Hesabi1 , C. A. Joiner1 Abstract: Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate

  16. A Two-Dimensional Model of Chemical Vapor Infiltration With Radio Frequency Heating

    E-Print Network [OSTI]

    Economou, Demetre J.

    by a finite element method to study carbon chemical vapor infiltration in a cylindrical carbon preformA Two-Dimensional Model of Chemical Vapor Infiltration With Radio Frequency Heating Vikas Midha studied. The power density distribution in the pre- form evolves in a complex manner as densified regions

  17. Thermodynamic analysis and growth of ZrO2 by chloride chemical vapor deposition

    E-Print Network [OSTI]

    Anderson, Timothy J.

    for the chemical vapor deposition (CVD) of zirconia. The results showed zirconia formation would occur at high) and high temperatures (N800 °C). Using these calculations as a guide, single-phase monoclinic zirconia.46 mg cm-2 h-1 . © 2007 Elsevier B.V. All rights reserved. Keywords: Chemical vapor deposition; Zirconia

  18. Low temperature chemical vapor deposition of Co thin films from Co2(CO)8

    E-Print Network [OSTI]

    Wang, Gwo-Ching

    Low temperature chemical vapor deposition of Co thin films from Co2(CO)8 D.-X. Yea,*, S. Pimanpanga chemical vapor deposition with a metallorganic Co2(CO)8 precursor. After Ar sputtering of the surface, Co2(CO)8, has been extensively used in cobalt CVD and is attractive, since Co is in its elemental

  19. Highly oriented, free-standing, superconducting NbN films growth on chemical vapor deposited graphene

    E-Print Network [OSTI]

    Raychaudhuri, Pratap

    Highly oriented, free-standing, superconducting NbN films growth on chemical vapor deposited oriented, free-standing, superconducting NbN films growth on chemical vapor deposited graphene Garima field of 33 T. In addition, we demonstrate a process for obtaining flexible, free-standing NbN films

  20. Microwave Plasma Chemical Vapor Deposition of Carbon Coatings on LiNi1/3Co1/3Mn1/3O2 for Li-Ion Battery Composite Cathodes

    E-Print Network [OSTI]

    Doeff, M.M.

    2012-01-01

    Microwave Plasma Chemical Vapor Deposition of Carbonanthracene, by a one-step microwave plasma chemical vaporFigure 1. A diagram of the microwave plasma chemical vapor

  1. Growth of graphene underlayers by chemical vapor deposition

    SciTech Connect (OSTI)

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu; Charlie Johnson, A. T.

    2013-11-15

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  2. Charged impurity-induced scatterings in chemical vapor deposited graphene

    SciTech Connect (OSTI)

    Li, Ming-Yang; Tang, Chiu-Chun [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Ling, D. C. [Department of Physics, Tamkang University, Tamsui Dist., New Taipei 25137, Taiwan (China); Li, L. J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 11529, Taiwan (China); Chi, C. C.; Chen, Jeng-Chung [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

    2013-12-21

    We investigate the effects of defect scatterings on the electric transport properties of chemical vapor deposited (CVD) graphene by measuring the carrier density dependence of the magneto-conductivity. To clarify the dominant scattering mechanism, we perform extensive measurements on large-area samples with different mobility to exclude the edge effect. We analyze our data with the major scattering mechanisms such as short-range static scatters, short-range screened Coulomb disorders, and weak-localization (WL). We establish that the charged impurities are the predominant scatters because there is a strong correlation between the mobility and the charge impurity density. Near the charge neutral point (CNP), the electron-hole puddles that are induced by the charged impurities enhance the inter-valley scattering, which is favorable for WL observations. Away from the CNP, the charged-impurity-induced scattering is weak because of the effective screening by the charge carriers. As a result, the local static structural defects govern the charge transport. Our findings provide compelling evidence for understanding the scattering mechanisms in graphene and pave the way for the improvement of fabrication techniques to achieve high-quality CVD graphene.

  3. Microwave Plasma Chemical Vapor Deposition of Nano-Structured Sn/C Composite Thin-Film Anodes for Li-ion Batteries

    E-Print Network [OSTI]

    Marcinek, M.

    2008-01-01

    Microwave Plasma Chemical Vapor Deposition of Nano-tert-butoxide by a one step microwave plasma chemical vaporBatteries; Anode; Plasma; Microwave Corresponding author. E-

  4. Micro Chemical Vapor Deposition for the Synthesis of Nanomaterials

    E-Print Network [OSTI]

    Zhou, Qin

    2011-01-01

    0.001 ??cm. A wet thermal oxide layer with a thickness of 2Figure 2.20(a). This oxide layer serves both as an etchingto remove the exposed oxide layer with RF power of 400 W,

  5. Chemical Vapor Deposition of Fluoroalkylsilane Monolayer Films for Adhesion Control in Microelectromechanical Systems

    SciTech Connect (OSTI)

    MAYER,THOMAS M.; DE BOER,MAARTEN P.; SHINN,NEAL D.; CLEWS,PEGGY J.; MICHALSKE,TERRY A.

    2000-01-26

    We have developed a new process for applying a hydrophobic, low adhesion energy coating to microelectromechanical (MEMS) devices. Monolayer films are synthesized from tridecafluoro-1,1,2,2-tetrahydrooctyltrichlorosilane (FOTS) and water vapor in a low-pressure chemical vapor deposition process at room temperature. Film thickness is self-limiting by virtue of the inability of precursors to stick to the fluorocarbon surface of the film once it has formed. We have measured film densities of {approx}3 molecules nm{sup 2} and film thickness of {approx}1 nm. Films are hydrophobic, with a water contact angle >110{sup o}. We have also incorporated an in-situ downstream microwave plasma cleaning process, which provides a clean, reproducible oxide surface prior to film deposition. Adhesion tests on coated and uncoated MEMS test structures demonstrate superior performance of the FOTS coatings. Cleaned, uncoated cantilever beam structures exhibit high adhesion energies in a high humidity environment. An adhesion energy of 100 mJ m{sup -2} is observed after exposure to >90% relative humidity. Fluoroalkylsilane coated beams exhibit negligible adhesion at low humidity and {<=} 20 {micro}J m{sup -2} adhesion energy at >90% relative humidity. No obvious film degradation was observed for films exposed to >90% relative humidity at room temperature for >24 hr.

  6. Bilayer graphene growth by low pressure chemical vapor deposition on copper foil

    E-Print Network [OSTI]

    Fang, Wenjing, S.M. Massachusetts Institute of Technology

    2012-01-01

    Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer ...

  7. The Vapor Deposition and Oxidation of Platinum-and Yttria-Stabilized Zirconia Multilayers

    E-Print Network [OSTI]

    Wadley, Haydn

    The Vapor Deposition and Oxidation of Platinum- and Yttria-Stabilized Zirconia Multilayers Zhuo Yu system consisting of platinum- and yttria-stabilized zirconia (YSZ) multilayers. Coatings containing one on the bond coat surface with no intermediate metastable oxide precursor phase.9 Yttria-stabilized zirconia

  8. Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition

    E-Print Network [OSTI]

    Dietz, Nikolaus

    pressure chemical vapor deposition R. P. Bhatta, B. D. Thoms,a A. Weerasekera, A. G. U. Perera, M. Alevli properties of InN layer grown by high pressure chemical vapor deposition have been studied by high-nitride alloys is challenging under low pressure process conditions due to higher equilibrium vapor pressure

  9. Structural, compositional, and photoluminescence characterization of thermal chemical vapor deposition-grown Zn?N? microtips

    SciTech Connect (OSTI)

    Wei, Pai-Chun, E-mail: pcwei68@gmail.com, E-mail: tsengcm@phys.sinica.edu.tw; Chang, Chung-Chieh; Hsu, Chia-Hao [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Tong, Shih-Chang; Shen, Ji-Lin [Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Tseng, Chuan-Ming, E-mail: pcwei68@gmail.com, E-mail: tsengcm@phys.sinica.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Institute of Materials Science and Engineering, National Central University, Tao-Yuan 32001, Taiwan (China)

    2014-10-14

    The catalytic growth of Zn?N? using guided-stream thermal chemical vapor deposition has been investigated within the parameter range of acicular growth to obtain uniform microtips with a high crystalline quality. The cubic anti-bixbyite crystal structure of Zn?N? microtips and its related phonon mode are revealed by X-ray diffraction and Raman spectroscopy, respectively. The surface morphologies of pure and surface-oxidized Zn?N? microtips are depicted by scanning electron microscopy and show the crack formation on the surface-oxidized Zn?N? microtips. The spatial element distribution map confirms the VLS growth mechanism for Zn?N? microtips and reveals the depth profile of zinc, nitrogen, oxygen, and nickel elements. Photoluminescence (PL) spectra of Zn?N? microtips show a sharp infrared band-to-band emission peak at 1.34 eV with a full width at half maximum of ~100 meV and a very broad oxygen-related defect band emission peak centered at ~0.85 eV.

  10. Reaction kinetics for the high temperature oxidation of Pu--1wt%Ga in water vapor

    SciTech Connect (OSTI)

    Stakebake, J L; Saba, M A

    1988-01-01

    Oxidation of plutonium metal is greatly accelerated by the presence of water vapor. The magnitude of the effect of water vapor on oxidation kinetics is determined by temperature, water concentration, and oxygen concentration. Most of the previous work has been directed toward evaluating the effect of moisture on the atmospheric oxidation of plutonium. Work on the isolation and characterization of the water reaction with plutonium has been very limited. The present work was undertaken to determine the kinetics of the plutonium--water reaction over a wide range of temperature and pressure. Reaction kinetics were measured using a vacuum microbalance system. The temperature range investigated was 100--500/degree/C. The effect of water vapor pressure on reaction kinetics was determined at 300/degree/C by varying the water pressure from 0.1 to 15 Torr. 2 figs.

  11. Testing of a model to estimate vapor concentration of various organic chemicals. Master's thesis

    SciTech Connect (OSTI)

    Bakalyar, S.M.

    1990-01-01

    A model developed by Dr. Parker C. Reist to predict the build-up and decay rates of vapor concentrations following a chemical spill and clean-up was tested. The chemicals tested were: acetone, butyl acetate, ethyl acetate, hexane, methylene chloride, methyl ethyl ketone, and toluene. The evaporation rates of these chemicals were determined both by prediction, using a model developed by I. Kawamura and D. Mackay, and empirically and these rates were used in the Reist model. Chamber experiments were done to measure actual building-up and decay of vapor concentrations for simulated spills and simulated clean-up.

  12. Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition. Kassem Ilmenau (Germany) Abstract. In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface

  13. Solar-induced chemical vapor deposition of diamond-type carbon films

    DOE Patents [OSTI]

    Pitts, J. Roland (Lakewood, CO); Tracy, C. Edwin (Golden, CO); King, David E. (Lakewood, CO); Stanley, James T. (Beaverton, OR)

    1994-01-01

    An improved chemical vapor deposition method for depositing transparent continuous coatings of sp.sup.3 -bonded diamond-type carbon films, comprising: a) providing a volatile hydrocarbon gas/H.sub.2 reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux of from about 40 to about 60 watts/cm.sup.2 through said reactant mixture to produce substrate temperatures of about 750.degree. C. to about 950.degree. C. to activate deposition of the film on said substrate.

  14. Solar-induced chemical vapor deposition of diamond-type carbon films

    DOE Patents [OSTI]

    Pitts, J.R.; Tracy, C.E.; King, D.E.; Stanley, J.T.

    1994-09-13

    An improved chemical vapor deposition method for depositing transparent continuous coatings of sp[sup 3]-bonded diamond-type carbon films, comprises: (a) providing a volatile hydrocarbon gas/H[sub 2] reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and (b) directing a concentrated solar flux of from about 40 to about 60 watts/cm[sup 2] through said reactant mixture to produce substrate temperatures of about 750 C to about 950 C to activate deposition of the film on said substrate. 11 figs.

  15. Cooperative Island Growth of Large Area Single-Crystal Graphene by Chemical Vapor Deposition on Cu

    SciTech Connect (OSTI)

    Regmi, Murari [Oak Ridge National Laboratory (ORNL); Rouleau, Christopher [Oak Ridge National Laboratory (ORNL); Puretzky, Alexander A [ORNL; Ivanov, Ilia N [ORNL; Geohegan, David B [ORNL; Chen, Jihua [ORNL; Eastman, Jeffrey [Argonne National Laboratory (ANL); Eres, Gyula [ORNL

    2014-01-01

    We describe a two-step approach for suppressing nucleation of graphene on Cu using chemical vapor deposition. In the first step, as received Cu foils are oxidized in air at temperatures up to 500 C to remove surface impurities and to induce the regrowth of Cu grains during subsequent annealing in H2 flow at 1040 C prior to graphene growth. In the second step, transient reactant cooling is performed by using a brief Ar pulse at the onset of growth to induce collisional deactivation of the carbon growth species. The combination of these two steps results in a three orders of magnitude reduction in the graphene nucleation density, enabling the growth of millimeter-size single crystal graphene grains. A kinetic model shows that suppressing nucleation promotes a cooperative island growth mode that favors the formation of large area single crystal graphene, and it is accompanied by a roughly 3 orders of magnitude increase in the reactive sticking probability of methane compared to that in random nucleation growth.

  16. In-Reactor Oxidation of Zircaloy-4 Under Low Water Vapor Pressures

    SciTech Connect (OSTI)

    Luscher, Walter G.; Senor, David J.; Clayton, Kevin; Longhurst, Glen

    2015-01-01

    Complementary in- and ex-reactor oxidation tests have been performed to evaluate the oxidation and hydrogen absorption performance of Zircaloy-4 (Zr-4) under relatively low partial pressures (300 and 1000 Pa) of water vapor at specified test temperatures (330° and 370°C). Data from these tests will be used to support fabrication of components intended for isotope-producing targets and provide information regarding the temperature and pressure dependence of oxidation and hydrogen absorption of Zr-4 over the specified range of test conditions. Comparisons between in- and ex- reactor test results were performed to evaluate the influence of irradiation.

  17. In-reactor oxidation of zircaloy-4 under low water vapor pressures

    SciTech Connect (OSTI)

    Luscher, Walter G.; Senor, David J.; Clayton, Kevin K.; Longhurst, Glen R.

    2015-01-01

    Complementary in- and ex-reactor oxidation tests have been performed to evaluate the oxidation and hydrogen absorption performance of Zircaloy-4 (Zr-4) under relatively low partial pressures (300 and 1000 Pa) of water vapor at specified test temperatures (330 and 370 ºC). Data from these tests will be used to support the fabrication of components intended for isotope-producing targets and provide information regarding the temperature and pressure dependence of oxidation and hydrogen absorption of Zr- 4 over the specified range of test conditions. Comparisons between in- and ex-reactor test results were performed to evaluate the influence of irradiation.

  18. Evaluation of Chemical Warfare Agent Percutaneous Vapor Toxicity: Derivation of Toxicity Guidelines for Assessing Chemical Protective Ensembles.

    SciTech Connect (OSTI)

    Watson, A.P.

    2003-07-24

    Percutaneous vapor toxicity guidelines are provided for assessment and selection of chemical protective ensembles (CPEs) to be used by civilian and military first responders operating in a chemical warfare agent vapor environment. The agents evaluated include the G-series and VX nerve agents, the vesicant sulfur mustard (agent HD) and, to a lesser extent, the vesicant Lewisite (agent L). The focus of this evaluation is percutaneous vapor permeation of CPEs and the resulting skin absorption, as inhalation and ocular exposures are assumed to be largely eliminated through use of SCBA and full-face protective masks. Selection of appropriately protective CPE designs and materials incorporates a variety of test parameters to ensure operability, practicality, and adequacy. One aspect of adequacy assessment should be based on systems tests, which focus on effective protection of the most vulnerable body regions (e.g., the groin area), as identified in this analysis. The toxicity range of agent-specific cumulative exposures (Cts) derived in this analysis can be used as decision guidelines for CPE acceptance, in conjunction with weighting consideration towards more susceptible body regions. This toxicity range is bounded by the percutaneous vapor estimated minimal effect (EME{sub pv}) Ct (as the lower end) and the 1% population threshold effect (ECt{sub 01}) estimate. Assumptions of exposure duration used in CPE certification should consider that each agent-specific percutaneous vapor cumulative exposure Ct for a given endpoint is a constant for exposure durations between 30 min and 2 hours.

  19. Growth Inhibition to Enhance Conformal Coverage in Thin Film Chemical Vapor Deposition

    E-Print Network [OSTI]

    Girolami, Gregory S.

    Technology Roadmap for Semiconductors predicts that it will be necessary to replace PVD with chemical vapor@scs.uiuc.edu; abelson@illinois.edu Many important technological applications depend crucially on the ability to deposit in a feature of given AR depends on the reactive sticking probability ( ) of the gas phase precursor

  20. Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene

    E-Print Network [OSTI]

    Hone, James

    Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene a scalable method to produce large-area graphene, CVD-grown graphene has heretofore exhibited inferior of CVD-grown graphene in which two important sources of disorder, namely grain boundaries and processing

  1. Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire

    E-Print Network [OSTI]

    Boyer, Edmond

    Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films 2004, there has been an increasing effort in developing efficient methods for preparing graphene graphene can be prepared, which is favorable for the achievement of high quality graphene; it is also known

  2. Device for rapid sample insertion and extraction in thermal chemical vapor deposition tube furnace

    E-Print Network [OSTI]

    Device for rapid sample insertion and extraction in thermal chemical vapor deposition tube furnace a tube furnace is described. The device operates in an atmosphere that is separate from ambient actuation through the walls of a quartz tube furnace is entirely general to any procedure using a tube

  3. Low temperature junction growth using hot-wire chemical vapor deposition

    DOE Patents [OSTI]

    Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

    2014-02-04

    A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

  4. An atomic-scale analysis of catalytically-assisted chemical vapor deposition of carbon nanotubes

    E-Print Network [OSTI]

    Grujicic, Mica

    ) their unique structure makes them suitable for tailored nanometer- scale membranes and molecular sieves [5]; (dAn atomic-scale analysis of catalytically-assisted chemical vapor deposition of carbon nanotubes M Growth of carbon nanotubes during transition-metal particles catalytically-assisted thermal decomposition

  5. Chemical vapor deposition of W-Si-N and W-B-N

    DOE Patents [OSTI]

    Fleming, James G. (Albuquerque, NM); Roherty-Osmun, Elizabeth Lynn (Albuquerque, NM); Smith, Paul M. (Albuquerque, NM); Custer, Jonathan S. (Albuquerque, NM); Jones, Ronald V. (Albuquerque, NM); Nicolet, Marc-A. (Pasadena, CA); Madar, Roland (Eybens, FR); Bernard, Claude (Brie et Angonnes, FR)

    1999-01-01

    A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

  6. Nanoimprint mold fabrication and replication by room-temperature conformal chemical vapor deposition

    E-Print Network [OSTI]

    Nanoimprint mold fabrication and replication by room-temperature conformal chemical vapor for the replication of molds for nanoimprint lithography NIL without solvents or etching. A thin hard amorphous from the polymer original, the thin hard film forms a NIL mold that is the inverse of the polymer

  7. Robust Numerical Simulation of Porosity Evolution in Chemical Vapor In ltration II: Two Dimensional

    E-Print Network [OSTI]

    Jin, Shi

    -solid reactions with solid deposition are exempli#12;ed by the fabrication of ceramic matrix composites through #3) process, during which a matrix of ceramic #12;bers is chemically vapor deposited within a porous preform practical approach to fabricate ceramic composites. Among these composites, #12;ber-reinforced composites

  8. Self-Limiting Chemical Vapor Deposition Growth of Monolayer Graphene from Ethanol

    E-Print Network [OSTI]

    Maruyama, Shigeo

    1 Self-Limiting Chemical Vapor Deposition Growth of Monolayer Graphene from Ethanol Pei Zhao, and systematically investigate the growth of graphene from ethanol and compare its self-limiting behavior over copper facets with different identities. Results show that the growth of graphene from ethanol in the LPCVD

  9. Selective Chemical Vapor Deposition of Platinum and Palladium Directed by Monolayers Patterned Using

    E-Print Network [OSTI]

    Girolami, Gregory S.

    , and bis(hexafluoroacetylacetonato)palladium(II), Pd- (hfac)2, in the presence of hydrogen. This processSelective Chemical Vapor Deposition of Platinum and Palladium Directed by Monolayers Patterned 61801 Received February 18, 1997. In Final Form: May 5, 1997X High-purity platinum and palladium thin

  10. Initiated chemical vapor deposition of fluoropolymer coatings for the surface modification of complex geometries

    E-Print Network [OSTI]

    Gupta, Malancha, 1980-

    2007-01-01

    Initiated chemical vapor deposition (iCVD) is a one-step, soventless process that can be used to produce polymeric thin films. The iCVD technique has been used to polymerize a wide variety of vinyl monomers such as glycidyl ...

  11. American Institute of Aeronautics and Astronautics Aerosol-Assisted Chemical Vapor Deposited Thin Films for

    E-Print Network [OSTI]

    Rockett, Angus

    American Institute of Aeronautics and Astronautics 1 Aerosol-Assisted Chemical Vapor Deposited Thin Aeronautics and Space Administration, John H. Glenn Research Center, Cleveland, OH 44135 Michael H.-C. Jin Sci. and Eng., 1304 West Green Street. #12;American Institute of Aeronautics and Astronautics 2 I

  12. Detailed Chemical Kinetic Modeling of Cyclohexane Oxidation

    SciTech Connect (OSTI)

    Silke, E J; Pitz, W J; Westbrook, C K; Ribaucour, M

    2006-11-10

    A detailed chemical kinetic mechanism has been developed and used to study the oxidation of cyclohexane at both low and high temperatures. Reaction rate constant rules are developed for the low temperature combustion of cyclohexane. These rules can be used for in chemical kinetic mechanisms for other cycloalkanes. Since cyclohexane produces only one type of cyclohexyl radical, much of the low temperature chemistry of cyclohexane is described in terms of one potential energy diagram showing the reaction of cyclohexyl radical + O{sub 2} through five, six and seven membered ring transition states. The direct elimination of cyclohexene and HO{sub 2} from RO{sub 2} is included in the treatment using a modified rate constant of Cavallotti et al. Published and unpublished data from the Lille rapid compression machine, as well as jet-stirred reactor data are used to validate the mechanism. The effect of heat loss is included in the simulations, an improvement on previous studies on cyclohexane. Calculations indicated that the production of 1,2-epoxycyclohexane observed in the experiments can not be simulated based on the current understanding of low temperature chemistry. Possible 'alternative' H-atom isomerizations leading to different products from the parent O{sub 2}QOOH radical were included in the low temperature chemical kinetic mechanism and were found to play a significant role.

  13. Oxide vapor distribution from a high-frequency sweep e-beam system

    SciTech Connect (OSTI)

    Chow, R.; Tassano, P.L.; Tsujimoto, N.

    1995-03-01

    Oxide vapor distributions have been determined as a function of operating parameters of a high frequency sweep e-beam source combined with a programmable sweep controller. We will show which parameters are significant, the parameters that yield the broadest oxide deposition distribution, and the procedure used to arrive at these conclusions. A design-of-experimental strategy was used with five operating parameters: evaporation rate, sweep speed, sweep pattern (pre-programmed), phase speed (azimuthal rotation of the pattern), profile (dwell time as a function of radial position). A design was chosen that would show which of the parameters and parameter pairs have a statistically significant effect on the vapor distribution. Witness flats were placed symmetrically across a 25 inches diameter platen. The stationary platen was centered 24 inches above the e-gun crucible. An oxide material was evaporated under 27 different conditions. Thickness measurements were made with a stylus profilometer. The information will enable users of the high frequency e-gun systems to optimally locate the source in a vacuum system and understand which parameters have a major effect on the vapor distribution.

  14. Effects of polymethylmethacrylate-transfer residues on the growth of organic semiconductor molecules on chemical vapor deposited graphene

    SciTech Connect (OSTI)

    Kratzer, Markus Teichert, Christian; Bayer, Bernhard C.; Kidambi, Piran R.; Matkovi?, Aleksandar; Gaji?, Radoš; Cabrero-Vilatela, Andrea; Weatherup, Robert S.; Hofmann, Stephan

    2015-03-09

    Scalably grown and transferred graphene is a highly promising material for organic electronic applications, but controlled interfacing of graphene thereby remains a key challenge. Here, we study the growth characteristics of the important organic semiconductor molecule para-hexaphenyl (6P) on chemical vapor deposited graphene that has been transferred with polymethylmethacrylate (PMMA) onto oxidized Si wafer supports. A particular focus is on the influence of PMMA residual contamination, which we systematically reduce by H{sub 2} annealing prior to 6P deposition. We find that 6P grows in a flat-lying needle-type morphology, surprisingly independent of the level of PMMA residue and of graphene defects. Wrinkles in the graphene typically act as preferential nucleation centers. Residual PMMA does however limit the length of the resulting 6P needles by restricting molecular diffusion/attachment. We discuss the implications for organic device fabrication, with particular regard to contamination and defect tolerance.

  15. Proposed Occupational Exposure Limits for Non-Carcinogenic Hanford Waste Tank Vapor Chemicals

    SciTech Connect (OSTI)

    Poet, Torka S.; Timchalk, Chuck

    2006-03-24

    A large number of volatile chemicals have been identified in the headspaces of tanks used to store mixed chemical and radioactive waste at the U.S. Department of Energy (DOE) Hanford Site, and there is concern that vapor releases from the tanks may be hazardous to workers. Contractually established occupational exposure limits (OELs) established by the Occupational Safety and Health Administration (OSHA) and American Conference of Governmental Industrial Hygienists (ACGIH) do not exist for all chemicals of interest. To address the need for worker exposure guidelines for those chemicals that lack OSHA or ACGIH OELs, a procedure for assigning Acceptable Occupational Exposure Limits (AOELs) for Hanford Site tank farm workers has been developed and applied to a selected group of 57 headspace chemicals.

  16. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect (OSTI)

    Harris Kagan; K.K. Gan; Richard Kass

    2009-03-31

    Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2009, and the LHC upgrades expected in 2013, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

  17. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect (OSTI)

    Rainer Wallny

    2012-10-15

    Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2010, and the LHC upgrades expected in 2015, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed and operational in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

  18. Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

    DOE Patents [OSTI]

    Lackey, Jr., Walter J. (Oak Ridge, TN); Caputo, Anthony J. (Knoxville, TN)

    1986-01-01

    A chemical vapor deposition (CVD) process for preparing fiber-reinforced ceramic composites. A specially designed apparatus provides a steep thermal gradient across the thickness of a fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

  19. Hot-Wire Chemical Vapor Deposition (HWCVD) technologies: Rapid, controllable growth of epitaxial silicon films

    Energy Innovation Portal (Marketing Summaries) [EERE]

    2013-12-27

    NREL scientists have discovered a unique way to quickly grow epitaxial Si using hot-wire chemical vapor deposition (HWCVD), which holds the potential to greatly decrease costs within the manufacturing of Si substrates.  With NREL’s HWCVD technology, Si material use and costs are dramatically reduced with scalable manufacturing and lower deposition temperatures.  NREL’s unique HWCVD technique can easily be integrated into existing manufacturing processes, allowing...

  20. Metal organic chemical vapor deposition of 111-v compounds on silicon

    DOE Patents [OSTI]

    Vernon, Stanley M. (Wellesley, MA)

    1986-01-01

    Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

  1. Vaporization of actinide oxides in thermal treatment processes for mixed waste

    SciTech Connect (OSTI)

    Ebbinghaus, B.B.; Krikorian, O.H.; Adamson, M.G.

    1994-10-04

    The purpose of this study is to evaluate the volatilities of U, Pu, and Am in thermal treatment processes for mixed wastes. The thermodynamics of vaporization U and Pu oxides in the presence of oxygen and water vapor and of U oxide in the presence of oxygen and chlorine were studied. Experimental studies of U oxide volatilities by previous authors have also been reviewed. For species where data are unavailable estimation methods were used to obtain free energies of formation of the gaseous species, The data are applied to thermal treatment processes in general and then more specifically to conditions representative of the Rocky Flats Plant Fluidized Bed Unit. (RFP FBU), molten salt oxidizer, and an incinerator. U volatilities are greatest ranging from 2.67 x 10{sup -7} gU/h in the RFP FBU to 4. 00 gU/h for typical incinerator conditions. Pu volatilities are almost 5 orders of magnitude less than U and Am volatilities are about 3 orders of magnitude less than Pu.

  2. Fe(III) Oxide Reactivity Toward Biological versus Chemical

    E-Print Network [OSTI]

    Roden, Eric E.

    size, surface area, and solubility of the mineral. Such variations lead to a continuum of Fe(III) oxideFe(III) Oxide Reactivity Toward Biological versus Chemical Reduction E R I C E . R O D E N of synthetic Fe(III) oxides with a broad range of crystallinity and specific surface area were examined

  3. Guidance Document Fume hoods are used when handling toxic or hazardous chemicals. Harmful gases, vapors and fumes

    E-Print Network [OSTI]

    completely. When working in the hood, position the sash as low as possible to minimize risk of exposure with high vapor pressure when releasing chemical vapors which could ignite when working with compounds with offensive odors Good work practices include: Check the airflow rate on the monitor/alarm to ensure

  4. Plasma reforming and partial oxidation of hydrocarbon fuel vapor to produce synthesis gas and/or hydrogen gas

    DOE Patents [OSTI]

    Kong, Peter C.; Detering, Brent A.

    2003-08-19

    Methods and systems for treating vapors from fuels such as gasoline or diesel fuel in an internal combustion engine, to form hydrogen gas or synthesis gas, which can then be burned in the engine to produce more power. Fuel vapor, or a mixture of fuel vapor and exhaust gas and/or air, is contacted with a plasma, to promote reforming reactions between the fuel vapor and exhaust gas to produce carbon monoxide and hydrogen gas, partial oxidation reactions between the fuel vapor and air to produce carbon monoxide and hydrogen gas, or direct hydrogen and carbon particle production from the fuel vapor. The plasma can be a thermal plasma or a non-thermal plasma. The plasma can be produced in a plasma generating device which can be preheated by contact with at least a portion of the hot exhaust gas stream, thereby decreasing the power requirements of the plasma generating device.

  5. Plasma Reforming And Partial Oxidation Of Hydrocarbon Fuel Vapor To Produce Synthesis Gas And/Or Hydrogen Gas

    DOE Patents [OSTI]

    Kong, Peter C. (Idaho Falls, ID); Detering, Brent A. (Idaho Falls, ID)

    2004-10-19

    Methods and systems are disclosed for treating vapors from fuels such as gasoline or diesel fuel in an internal combustion engine, to form hydrogen gas or synthesis gas, which can then be burned in the engine to produce more power. Fuel vapor, or a mixture of fuel vapor and exhaust gas and/or air, is contacted with a plasma, to promote reforming reactions between the fuel vapor and exhaust gas to produce carbon monoxide and hydrogen gas, partial oxidation reactions between the fuel vapor and air to produce carbon monoxide and hydrogen gas, or direct hydrogen and carbon particle production from the fuel vapor. The plasma can be a thermal plasma or a non-thermal plasma. The plasma can be produced in a plasma generating device which can be preheated by contact with at least a portion of the hot exhaust gas stream, thereby decreasing the power requirements of the plasma generating device.

  6. Vaporization of zinc from scrap

    SciTech Connect (OSTI)

    Ozturk, B.; Fruehan, R.J. [Carnegie Mellon Univ., Pittsburgh, PA (United States)

    1996-12-31

    The rate of zinc vaporization from galvanized scrap was measured using a thermogravimetric apparatus along with chemical analysis. It is found that the rate of zinc vaporization is very fast in nitrogen and carbon monoxide atmospheres at temperatures higher than 950 C. At lower temperature rate decreases with decreasing temperature and is controlled by the gas phase mass transport. The simultaneous oxidation and vaporization of zinc occurs when the samples were heated in carbon dioxide and air. The current experimental results indicate that almost all of the zinc from scrap vaporizes during the heating process in a very short period of time after the temperature reaches above 850 C.

  7. Surface roughening in low-pressure chemical vapor deposition Jason T. Drotar, Y.-P. Zhao, T.-M. Lu, and G.-C. Wang

    E-Print Network [OSTI]

    Wang, Gwo-Ching

    Surface roughening in low-pressure chemical vapor deposition Jason T. Drotar, Y.-P. Zhao, T.-M. Lu etching, the pressure is usually low enough so that the mean free path of the vapor particles is much of a reemission model for chemical vapor deposition. We find that, for pure first-order reemission, the interface

  8. SiC rapid thermal carbonization of the (111)Si semiconductor-on-insulator structure and subsequent metalorganic chemical vapor deposition

    E-Print Network [OSTI]

    Cincinnati, University of

    vapor deposition with mixtures of propane and H2 at atmospheric pressure. Carbonization temperatures metalorganic chemical vapor deposition of GaN A. J. Steckla) and J. Devrajan University of Cincinnati . Metalorganic chemical vapor deposition growth of GaN on the 111 SiC SOI was carried out with trimethylgallium

  9. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

    DOE Patents [OSTI]

    Grigorian, Leonid; Hornyak, Louis; Dillon, Anne C; Heben, Michael J

    2014-09-23

    The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

  10. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

    DOE Patents [OSTI]

    Grigorian, Leonid (Raymond, OH); Hornyak, Louis (Evergreen, CO); Dillon, Anne C (Boulder, CO); Heben, Michael J (Denver, CO)

    2008-10-07

    The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

  11. III-nitride quantum cascade detector grown by metal organic chemical vapor deposition

    SciTech Connect (OSTI)

    Song, Yu, E-mail: yusong@princeton.edu; Huang, Tzu-Yung; Badami, Pranav; Gmachl, Claire [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540 (United States); Bhat, Rajaram; Zah, Chung-En [Corning Incorporated, Corning, New York 14831 (United States)

    2014-11-03

    Quantum cascade (QC) detectors in the GaN/Al{sub x}Ga{sub 1?x}N material system grown by metal organic chemical vapor deposition are designed, fabricated, and characterized. Only two material compositions, i.e., GaN as wells and Al{sub 0.5}Ga{sub 0.5}N as barriers are used in the active layers. The QC detectors operates around 4??m, with a peak responsivity of up to ?100??A/W and a detectivity of up to 10{sup 8} Jones at the background limited infrared performance temperature around 140?K.

  12. Method of making AlInSb by metal-organic chemical vapor deposition

    DOE Patents [OSTI]

    Biefeld, Robert M. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Baucom, Kevin C. (Albuquerque, NM)

    2000-01-01

    A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al.sub.X In.sub.1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525.degree. C. to produce Al.sub.x In.sub.1-x Sb crystalline materials wherein x is greater than 0.002 and less than one.

  13. Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions

    SciTech Connect (OSTI)

    Roy, T.; Hesabi, Z. R.; Joiner, C. A.; Vogel, E. M. [School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332 (United States); Liu, L.; Gu, G. [Department of Electrical Engineering and Computer Science, University of Tennessee, 1520 Middle Drive, Knoxville, Tennessee 37996 (United States); Barrera, S. de la; Feenstra, R. M. [Department of Physics, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania 15213 (United States); Chakrabarti, B. [School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Rd., Richardson, Texas 75080 (United States)

    2014-03-24

    Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene–hexagonal boron nitride–graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene–hexagonal boron nitride–graphene devices. Density-of-states features are observed in the tunneling characteristics of the devices, although without large resonant peaks that would arise from lateral momentum conservation. The lack of distinct resonant behavior is attributed to disorder in the devices, and a possible source of the disorder is discussed.

  14. Chemical vapor deposition techniques and related methods for manufacturing microminiature thermionic converters

    DOE Patents [OSTI]

    King, Donald B. (Albuquerque, NM); Sadwick, Laurence P. (Salt Lake City, UT); Wernsman, Bernard R. (Clairton, PA)

    2002-06-25

    Methods of manufacturing microminiature thermionic converters (MTCs) having high energy-conversion efficiencies and variable operating temperatures using MEMS manufacturing techniques including chemical vapor deposition. The MTCs made using the methods of the invention incorporate cathode to anode spacing of about 1 micron or less and use cathode and anode materials having work functions ranging from about 1 eV to about 3 eV. The MTCs also exhibit maximum efficiencies of just under 30%, and thousands of the devices can be fabricated at modest costs.

  15. Growth of highly oriented carbon nanotubes by plasma-enhanced hot filament chemical vapor deposition

    SciTech Connect (OSTI)

    Huang, Z.P.; Xu, J.W.; Ren, Z.F.; Wang, J.H.; Siegal, M.P.; Provencio, P.N.

    1998-12-01

    Highly oriented, multiwalled carbon nanotubes were grown on polished polycrystalline and single crystal nickel substrates by plasma enhanced hot filament chemical vapor deposition at temperatures below 666 {degree}C. The carbon nanotubes range from 10 to 500 nm in diameter and 0.1 to 50 {mu}m in length depending on growth conditions. Acetylene is used as the carbon source for the growth of the carbon nanotubes and ammonia is used for dilution gas and catalysis. The plasma intensity, acetylene to ammonia gas ratio, and their flow rates, etc. affect the diameters and uniformity of the carbon nanotubes. {copyright} {ital 1998 American Institute of Physics.}

  16. Improved process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

    DOE Patents [OSTI]

    Lackey, W.J. Jr.; Caputo, A.J.

    1984-09-07

    A specially designed apparatus provides a steep thermal gradient across the thickness of fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

  17. Growth of Highly-Oriented Carbon Nanotubes by Plasma-Enhanced Hot Filament Chemical Vapor Deposition

    SciTech Connect (OSTI)

    Huang, Z.P.; Provencio, P.N.; Ren, Z.F.; Siegal, M.P.; Wang, J.H.; Xu, J.W.

    1998-10-11

    Highly-oriented, multi-walled carbon nanotubes were grown on polished polycrystalline and single crystal nickel substrates by plasma enhanced hot filament chemical vapor deposition at temperatures below 666"C. The carbon nanotubes range from 10 to 500 nm in diameter and 0.1 to 50 pm in length depending on growth conditions. Acetylene is used as the carbon source for the growth of the carbon nanotubes and ammonia is used for dilution gas and catalysis. The plasma intensity, acetylene to ammonia gas ratio and their flow rates, etc. affect the diameters and uniformity of the carbon nanotubes. In summary, we synthesized large-area highly-oriented carbon nanotubes at temperatures below 666C by plasma-enhanced hot filament chemical vapor deposition. Acetylene gas is used to provide carbon for nanotube growth and ammonia gas is used for dilution and catalysis. Plasma intensity is critical in determining the nanotube aspect ratios (diameter and length), and range of both site and height distributions within a given film.

  18. Characteristics of ultra low-k nanoporous and fluorinated silica based films prepared by plasma enhanced chemical vapor deposition

    SciTech Connect (OSTI)

    Abbasi-Firouzjah, M.; Shokri, B.; Physics Department, Shahid Beheshti University G.C., Evin, Tehran

    2013-12-07

    Low dielectric constant (low-k) silica based films were deposited on p-type silicon and polycarbonate substrates by radio frequency (RF) plasma enhanced chemical vapor deposition method at low temperature. A mixture of tetraethoxysilane vapor, oxygen, and tetrafluoromethane (CF{sub 4}) was used for the deposition of the films in forms of two structures called as SiO{sub x}C{sub y} and SiO{sub x}C{sub y}F{sub z}. Properties of the films were controlled by amount of porosity and fluorine content in the film matrix. The influence of RF power and CF{sub 4} flow on the elemental composition, deposition rate, surface roughness, leakage current, refractive index, and dielectric constant of the films were characterized. Moreover, optical emission spectroscopy was applied to monitor the plasma process at the different parameters. Electrical characteristics of SiO{sub x}C{sub y} and SiO{sub x}C{sub y}F{sub z} films with metal-oxide-semiconductor structure were investigated using current-voltage analysis to measure the leakage current and breakdown field, as well as capacitance-voltage analysis to obtain the film's dielectric constant. The results revealed that SiO{sub x}C{sub y} films, which are deposited at lower RF power produce more leakage current, meanwhile the dielectric constant and refractive index of these films decreased mainly due to the more porosity in the film structure. By adding CF{sub 4} in the deposition process, fluorine, the most electronegative and the least polarized atom, doped into the silica film and led to decrease in the refractive index and the dielectric constant. In addition, no breakdown field was observed in the electrical characteristics of SiO{sub x}C{sub y}F{sub z} films and the leakage current of these films reduced by increment of the CF{sub 4} flow.

  19. Oxidation of zirconium alloys in 2.5 kPa water vapor for tritium readiness.

    SciTech Connect (OSTI)

    Mills, Bernice E.

    2007-11-01

    A more reactive liner material is needed for use as liner and cruciform material in tritium producing burnable absorber rods (TPBAR) in commercial light water nuclear reactors (CLWR). The function of these components is to convert any water that is released from the Li-6 enriched lithium aluminate breeder material to oxide and hydrogen that can be gettered, thus minimizing the permeation of tritium into the reactor coolant. Fourteen zirconium alloys were exposed to 2.5 kPa water vapor in a helium stream at 300 C over a period of up to 35 days. Experimental alloys with aluminum, yttrium, vanadium, titanium, and scandium, some of which also included ternaries with nickel, were included along with a high nitrogen impurity alloy and the commercial alloy Zircaloy-2. They displayed a reactivity range of almost 500, with Zircaloy-2 being the least reactive.

  20. CHEMICALLY VAPOR DEPOSITED YTTRIA-STABILIZED ZIRCONIA (YSZ) FOR THERMAL AND ENVIRONMENTAL BARRIER COATING

    SciTech Connect (OSTI)

    Varanasi, V.G.; Besmann, T.M.; Lothian, J.L.; Xu, W.; Starr, T.L.

    2003-04-22

    Yttria-stabilized zirconia (YSZ) is used as a thermal barrier coating (TBC) to protect super-alloy blades such as Mar-M247 or Rene-N5 during engine operation. The current method for YSZ fabrication for TBC applications is by air-plasma spraying (APS) or electron beam physical vapor deposition (EB-PVD) (Haynes 1997). APS gives reasonable deposition rates, but has a limited life and aging effects due to its porous and lamellar structure. The EB-PVD coatings are more stable and can accommodate thermomechanical stresses due to their characteristic strain-tolerant, columnar microstructure. EB-PVD, however, is primarily line-of-sight, which often leaves ''hidden areas'' uncoated, has low throughput, and has high capital cost. The process of metal-organic chemical vapor deposition (MOCVD) is investigated here as an economical alternative to EB-PVD and APS, with the potential for better overall coverage as well as the ability to produce thick (100-250 {micro}m), strain-tolerant, columnar coatings. MOCVD of YSZ involves the use of zirconium and yttrium organometallic precursors reacting with an oxygen source. Previous researchers have used diketonate or chloride precursors and oxygen (Wahl et al. 2001a, Wahl et al. 2001b, Yamane and Harai 1989). These precursors have low transport rates due to their low carrier solvent solubility (Varanasi et al. 2003). Solvated zirconium and yttrium butoxide precursors were investigated here due to their higher vapor pressures and high solvent solubility. This work uses predictive equilibrium modeling and experiments involving butoxide precursors for tetragonal YSZ fabrication.

  1. Capillary - Discharge Based Hand-Held Detector For Chemical Vapor Monitoring

    DOE Patents [OSTI]

    Duan, Yixiang (White Rock, NM)

    2005-05-31

    A handheld/portable detector for chemical vapor monitoring includes a housing and a discharge chamber that is established therein. The plasma discharge has a relatively small volume, e.g., in the micro-liter range. A first electrode and a second electrode are disposed within the discharge chamber and a discharge gap is established therebetween. A sample gas tube is in fluid communication with the discharge chamber and provides a sample gas to the discharge chamber. Also, a plasma gas tube is in fluid communication with the discharge chamber and provides a plasma gas thereto. Accordingly, the plasma gas can be used to maintain microplasma discharge between the electrodes and the sample gas can be introduced into the microplasma discharge. A spectrometer optically connected to the handheld/portable detector is used to measure the radiation emitted by the sample gas when subjected to the microplasma discharge.

  2. Carbon impurities on graphene synthesized by chemical vapor deposition on platinum

    SciTech Connect (OSTI)

    Ping, Jinglei; Fuhrer, Michael S., E-mail: michael.fuhrer@monash.edu [Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742-4111, USA and School of Physics, Monash University, 3800 Victoria (Australia)

    2014-07-28

    We report nanocrystalline carbon impurities coexisting with graphene synthesized via chemical vapor deposition on platinum. For certain growth conditions, we observe micron-size island-like impurity layers which can be mistaken for second graphene layers in optical microscopy or scanning electron microscopy. The island orientation depends on the crystalline orientation of the Pt, as shown by electron backscatter diffraction, indicating growth of carbon at the platinum surface below graphene. Dark-field transmission electron microscopy indicates that in addition to uniform single-crystal graphene, our sample is decorated with nanocrystalline carbon impurities with a spatially inhomogeneous distribution. The impurity concentration can be reduced significantly by lowering the growth temperature. Raman spectra show a large D peak, however, electrical characterization shows high mobility (?8000?cm{sup 2}/Vs), indicating a limitation for Raman spectroscopy in characterizing the electronic quality of graphene.

  3. Selective charge doping of chemical vapor deposition-grown graphene by interface modification

    SciTech Connect (OSTI)

    Wang, Shengnan, E-mail: wang.shengnan@lab.ntt.co.jp; Suzuki, Satoru; Furukawa, Kazuaki; Orofeo, Carlo M.; Takamura, Makoto; Hibino, Hiroki [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)] [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)

    2013-12-16

    The doping and scattering effect of substrate on the electronic properties of chemical vapor deposition (CVD)-grown graphene are revealed. Wet etching the underlying SiO{sub 2} of graphene and depositing self-assembled monolayers (SAMs) of organosilane between graphene and SiO{sub 2} are used to modify various substrates for CVD graphene transistors. Comparing with the bare SiO{sub 2} substrate, the carrier mobility of CVD graphene on modified substrate is enhanced by almost 5-fold; consistently the residual carrier concentration is reduced down to 10{sup 11}?cm{sup ?2}. Moreover, scalable and reliable p- and n-type graphene and graphene p-n junction are achieved on various silane SAMs with different functional groups.

  4. Fabrication of Rare Earth-Doped Transparent Glass Ceramic Optical Fibers by Modified Chemical Vapor Deposition

    E-Print Network [OSTI]

    Blanc, Wilfried; Nguyen, Luan; Bhaktha, S N B; Sebbah, Patrick; Pal, Bishnu P; Dussardier, Bernard

    2011-01-01

    Rare earth (RE) doped silica-based optical fibers with transparent glass ceramic (TGC) core was fabricated through the well-known modified chemical vapor deposition (MCVD) process without going through the commonly used stage of post-ceramming. The main characteristics of the RE-doped oxyde nanoparticles namely, their density and mean diameter in the fibers are dictated by the concentration of alkaline earth element used as phase separating agent. Magnesium and erbium co-doped fibers were fabricated. Optical transmission in term of loss due to scattering as well as some spectroscopic characteristics of the erbium ions was studied. For low Mg content, nano-scale particles could be grown with and relatively low scattering losses were obtained, whereas large Mg-content causes the growth of larger particles resulting in much higher loss. However in the latter case, certain interesting alteration of the spectroscopic properties of the erbium ions were observed. These initial studies should be useful in incorporati...

  5. Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition

    SciTech Connect (OSTI)

    Mantovan, R., E-mail: roberto.mantovan@mdm.imm.cnr.it; Vangelista, S.; Wiemer, C.; Lamperti, A.; Tallarida, G. [Laboratorio MDM IMM-CNR, I-20864 Agrate Brianza (MB) (Italy); Chikoidze, E.; Dumont, Y. [GEMaC, Université de Versailles St. Quentin en Yvelines-CNRS, Versailles (France); Fanciulli, M. [Laboratorio MDM IMM-CNR, I-20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Milano (Italy)

    2014-05-07

    R-Fe-O (R?=?rare earth) compounds have recently attracted high interest as potential new multiferroic materials. Here, we report a method based on the solid-state reaction between Er{sub 2}O{sub 3} and Fe layers, respectively grown by atomic layer deposition and chemical vapor deposition, to synthesize Er-Fe-O thin films. The reaction is induced by thermal annealing and evolution of the formed phases is followed by in situ grazing incidence X-ray diffraction. Dominant ErFeO{sub 3} and ErFe{sub 2}O{sub 4} phases develop following subsequent thermal annealing processes at 850?°C in air and N{sub 2}. Structural, chemical, and morphological characterization of the layers are conducted through X-ray diffraction and reflectivity, time-of-flight secondary ion-mass spectrometry, and atomic force microscopy. Magnetic properties are evaluated by magnetic force microscopy, conversion electron Mössbauer spectroscopy, and vibrating sample magnetometer, being consistent with the presence of the phases identified by X-ray diffraction. Our results constitute a first step toward the use of cost-effective chemical methods for the synthesis of this class of multiferroic thin films.

  6. Towards improved spinnability of chemical vapor deposition generated multi-walled carbon nanotubes

    E-Print Network [OSTI]

    McKee, Gregg Sturdivant Burke

    2008-01-01

    defect densities and less catalytic oxidation by the ironcatalytic effects of transition metals upon the oxidation ofcatalytic effects of nanotube catalyst particles and their oxides upon the oxidation

  7. The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition

    E-Print Network [OSTI]

    Dietz, Nikolaus

    the growth temperatures to below 650 °C for low-pressure metal organic chemical vapor depo- sition MOCVDThe influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition N. Dietz,1,a M. Alevli,1 R. Atalay,1 G. Durkaya,1 R. Collazo,2 J. Tweedie,2 S

  8. Highly stable silicon dioxide films deposited by means of rapid thermal -low-pressure chemical vapor deposition onto InP

    E-Print Network [OSTI]

    Florida, University of

    grown by rapid thermal, low-pressure chemical vapor deposition (RT-LPCVD), using pure oxygen (0,) and 2Highly stable silicon dioxide films deposited by means of rapid thermal - low-pressure chemical vapor deposition onto InP A. Katz, A. Feingold, U. K. Chakrabarti, and S. J. Peat-ton AT&T Bell

  9. The influence of ammonia on rapid-ther al low-pressure metalorganic chemical vapor deposited TIN, films from tetrakis (dimethylamido) titanium

    E-Print Network [OSTI]

    Florida, University of

    The influence of ammonia on rapid-ther al low-pressure metalorganic chemical vapor deposited TIN, and stress of rapid- thermal low pressure metalorganic chemical vapor deposited (RT-LPMOCVD) TiN, films on In) liquid precursors, were studied. Enhanced deposition rates of l-3 nm s- ' at total chamber pressures

  10. A molecular dynamics study of the graphitization ability of transition metals for catalysis of carbon nanotube growth via chemical vapor deposition

    E-Print Network [OSTI]

    Elliott, James

    of carbon nanotube growth via chemical vapor deposition Yasushi Shibuta a,*, James A. Elliott b a Department for carbon nanotube growth via chemical vapor deposition has been investigated via classical molecular and graphene sheet was found to be higher than for clusters comprising cobalt or nickel, since the high energy

  11. Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3

    E-Print Network [OSTI]

    passivation has to date been mostly deposited by conventional atomic layer deposition (ALD), a technique-effect transistors subjected to on-state bias stress J. Appl. Phys. 111, 084504 (2012) Atomic imaging of atomic layerSurface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3 Lachlan E

  12. Deposition of silicon carbide films using a high vacuum metalorganic chemical vapor deposition method with a single source precursor

    E-Print Network [OSTI]

    Boo, Jin-Hyo

    , high temperature, and high radiation environments. Conventional silicon carbide chemical vapor deposition CVD processes generally utilized multiple precursors such as silane and hydrocarbons, and required temperature alternatives to the conventional SiC CVD methods must be considered. To do this, a relatively

  13. Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition

    E-Print Network [OSTI]

    Wang, Q.; Dahal, R.; Feng, I. W.; Lin, J. Y.; Jiang, H. X.; Hui, Rongqing

    2011-01-01

    We repost the characterization of emission and absorption cross-sections in an erbium-doped GaN waveguide prepared by metal organic chemical vapor deposition. The emission cross-section was obtained with the Füchtbauer–Ladenburg equation based...

  14. HfB2 and HfBN hard coatings by chemical vapor deposition S. Jayaraman a,c

    E-Print Network [OSTI]

    Girolami, Gregory S.

    are popular materials for hard and environmental coat- ings [1­16]. Applications include cutting tools, wearHfB2 and Hf­B­N hard coatings by chemical vapor deposition S. Jayaraman a,c , J.E. Gerbi a,c , Y rights reserved. Keywords: Hafnium diboride; Hafnium borohydride; CVD; Hard coating; Nanoindentation

  15. Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition

    E-Print Network [OSTI]

    Gilchrist, James F.

    Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor Seebeck coefficient and resistance measurement system for thermoelectric materials in the thin disk geometry Rev. Sci. Instrum. 83, 025101 (2012) High-temperature thermoelectric properties of Cu1­xInTe2

  16. Effect of Chemical Composition on Enthalpy of Evaporation and Equilibrium Vapor Pressure

    E-Print Network [OSTI]

    Vladimir Kh. Dobruskin

    2010-04-20

    Proceeding from the Clausius-Clapeyron equation, the relation is derived that establishes a correlation between the partial enthalpy of evaporation from binary solutions, concentrations of components, and equilibrium vapor pressures. The difference between enthalpies of evaporation of components from solutions and those from the pure liquids, D(DH), depends on the chemical nature and concentrations, X, of solutions. The effect of concentrations on D(DH) makes different appearances in ideal and non-ideal solutions, although, as a whole, D(DH) increases with the growth of concentration of the second component. A model is introduced, which considers D(DH) as the sum of energetic changes of three sequential stages: passage of molecules from the bulk liquid into the surface layer, exit of the molecules on the outer side of the interface, and the following desorption into the gas phase. In the framework of the model, the main contribution to enthalpy of evaporation comes from the processes in the surface layer. It is suggested that adsorption from solutions, which changes the chemical composition of the surface layer with respect to that of the bulk solution, determines, to great extent, the difference in the forms of the curves D(DH)=f(X) for ideal and non-ideal solutions.

  17. The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

    E-Print Network [OSTI]

    is etched away.10 Removal of PMMA from graphene is problematic. Conventional semiconductor surface cleaning deposited graphene transferred to SiO2 A. Pirkle,1 J. Chan,1 A. Venugopal,2 D. Hinojos,1 C. W. Magnuson,3 S) The effects of residues introduced during the transfer of chemical vapor deposited graphene from a Cu

  18. TANK VAPOR CHEMICALS OF POTENTIAL CONCERN & EXISTING DIRECT READING INSTRUMENTION & PERSONAL PROTECTIVE EQUIPMENT CONSIDERATIONS

    SciTech Connect (OSTI)

    BUTLER, N.K.

    2004-11-01

    This document takes the newly released Industrial Hygiene Chemical Vapor Technical Basis (RPP-22491) and evaluates the chemicals of potential concern (COPC) identified for selected implementation actions by the industrial hygiene organization. This document is not intended as a hazard analysis with recommended controls for all tank farm activities. Not all of the chemicals listed are present in all tanks; therefore, hazard analyses can and should be tailored as appropriate. Detection of each chemical by current industrial hygiene non-specific instrumentation in use at the tank farms is evaluated. Information gaps are identified and recommendations are made to resolve these needs. Of the 52 COPC, 34 can be detected with existing instrumentation. Three additional chemicals could be detected with a photoionization detector (PID) equipped with a different lamp. Discussion with specific instrument manufacturers is warranted. Consideration should be given to having the SapphIRe XL customized for tank farm applications. Other instruments, sampling or modeling techniques should be evaluated to estimate concentrations of chemicals not detected by direct reading instruments. In addition, relative instrument response needs to be factored in to action levels used for direct reading instruments. These action levels should be correlated to exposures to the COPC and corresponding occupational exposure limits (OELs). The minimum respiratory protection for each of the COPC is evaluated against current options. Recommendations are made for respiratory protection based on each chemical. Until exposures are sufficiently quantified and analyzed, the current use of supplied air respiratory protection is appropriate and protective for the COPC. Use of supplied air respiratory protection should be evaluated once a detailed exposure assessment for the COPC is completed. The established tank farm OELs should be documented in the TFC-PLN-34. For chemicals without an established tank farm OEL, consideration should be given to adopting protective limits from NIOSH, AIHA, or developing OELs. Protective gloves and suits are evaluated for each chemical for which information is available. Information gaps are identified for some of the compounds and materials. Recommendations are made for resolving these needs. Based on available information, Silver Shield{reg_sign} gloves are promising for tank farm applications. However, permeation testing documentation is needed for the COPC and mixtures for Silver Shield{reg_sign} gloves to evaluate their protectiveness. North Safety Products is expected to provide the requested documentation. Multiple Tychem{reg_sign} products are available. There is overlap between chemicals and effective materials. Further hazard evaluation to determine actual hazards and permeation testing documentation is required to assess the efficacy of a single Tychem{reg_sign} product for tank farm applications. All of this chemical specific data is combined into a spreadsheet that will assist the industrial hygienist in the selection of monitoring instruments, respiratory protection selection and protective clothing for performing work at a specific tank(s).

  19. Effect of Chemical Composition on Enthalpy of Evaporation and Equilibrium Vapor Pressure

    E-Print Network [OSTI]

    Dobruskin, Vladimir Kh

    2010-01-01

    Proceeding from the Clausius-Clapeyron equation, the relation is derived that establishes a correlation between the partial enthalpy of evaporation from binary solutions, concentrations of components, and equilibrium vapor pressures. The difference between enthalpies of evaporation of components from solutions and those from the pure liquids, D(DH), depends on the chemical nature and concentrations, X, of solutions. The effect of concentrations on D(DH) makes different appearances in ideal and non-ideal solutions, although, as a whole, D(DH) increases with the growth of concentration of the second component. A model is introduced, which considers D(DH) as the sum of energetic changes of three sequential stages: passage of molecules from the bulk liquid into the surface layer, exit of the molecules on the outer side of the interface, and the following desorption into the gas phase. In the framework of the model, the main contribution to enthalpy of evaporation comes from the processes in the surface layer. It ...

  20. Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)

    SciTech Connect (OSTI)

    Urban, J. M.; Binder, J.; Wysmo?ek, A.; D?browski, P.; Strupi?ski, W.; Kopciuszy?ski, M.; Ja?ochowski, M.; Klusek, Z.

    2014-06-21

    We present optical, electrical, and structural properties of nitrogen-doped graphene grown on the Si face of 4H-SiC (0001) by chemical vapor deposition method using propane as the carbon precursor and N{sub 2} as the nitrogen source. The incorporation of nitrogen in the carbon lattice was confirmed by X-ray photoelectron spectroscopy. Angle-resolved photoemission spectroscopy shows carrier behavior characteristic for massless Dirac fermions and confirms the presence of a graphene monolayer in the investigated nitrogen-doped samples. The structural and electronic properties of the material were investigated by Raman spectroscopy. A systematical analysis of the graphene Raman spectra, including D, G, and 2D bands, was performed. In the case of nitrogen-doped samples, an electron concentration on the order of 5–10 × 10{sup 12}?cm{sup ?2} was estimated based upon Raman and Hall effect measurements and no clear dependence of the carrier concentration on nitrogen concentration used during growth was observed. This high electron concentration can be interpreted as both due to the presence of nitrogen in graphitic-like positions of the graphene lattice as well as to the interaction with the substrate. A greater intensity of the Raman D band and increased inhomogeneity, as well as decreased electron mobility, observed for nitrogen-doped samples, indicate the formation of defects and a modification of the growth process induced by nitrogen doping.

  1. Fabrication of layered self-standing diamond film by dc arc plasma jet chemical vapor deposition

    SciTech Connect (OSTI)

    Chen, G. C.; Dai, F. W.; Li, B.; Lan, H.; Askari, J.; Tang, W. Z.; Lu, F. X.

    2007-01-15

    Layered self-standing diamond films, consisting of an upper layer, buffer layer, and a lower layer, were fabricated by fluctuating the ratio of methane to hydrogen in high power dc arc plasma jet chemical vapor deposition. There were micrometer-sized columnar diamond crystalline grains in both upper layer and lower layer. The size of the columnar diamond crystalline grains was bigger in the upper layer than that in the lower layer. The orientation of the upper layer was (110), while it was (111) for the lower layer. Raman results showed that no sp{sup 3} peak shift was found in the upper layer, but it was found and blueshifted in the lower layer. This indicated that the internal stress within the film body could be tailored by this layered structure. The buffer layer with nanometer-sized diamond grains formed by secondary nucleation was necessary in order to form the layered film. Growth rate was over 10 {mu}m/h in layered self-standing diamond film fabrication.

  2. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    SciTech Connect (OSTI)

    Santra, T. S.; Liu, C. H. [Institute of Nanoengineering and Microsystems (NEMS), National Tsing Hua University, Hsinchu, Taiwan 30043 (China); Bhattacharyya, T. K. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721302, West Bengal (India); Patel, P. [Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801 (United States); Barik, T. K. [School of Applied Sciences, Haldia Institute of Technology, Haldia 721657, Purba Medinipur, West Bengal (India)

    2010-06-15

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of C-C, C-H, Si-C, and Si-H bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio I{sub D}/I{sub G}. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  3. Chemical and Physical Modification of Graphitic Materials by Oxidative Processes and Solvent Intercalation 

    E-Print Network [OSTI]

    Werke, Carrie Beth

    2014-08-27

    is by chemical functionalization, such as oxidation. This work looks at two different oxidation techniques for graphite; UV/O3 exposure and biased AFM lithography for broad and local oxidation, respectively. For the supported graphitic samples including graphene...

  4. A chemical approach to understanding oxide surfaces James A. Enterkin a,b,c

    E-Print Network [OSTI]

    Marks, Laurence D.

    A chemical approach to understanding oxide surfaces James A. Enterkin a,b,c , Andres E. Becerra-Toledo d , Kenneth R. Poeppelmeier a,b,c , Laurence D. Marks c,d, a Chemical Sciences and Engineering Keywords: Bond valence sum Coordination Chemical bond Surface structure Metal oxide Chemical bonding has

  5. Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor 

    E-Print Network [OSTI]

    Nominanda, Helinda

    2004-01-01

    The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

  6. Chemically Modified Metal Oxide Nanostructure for Photoelectrochemical Water Splitting

    E-Print Network [OSTI]

    Wang, Gongming

    2013-01-01

    be good catalysts for catalytic oxidation of small organicsolution, indicative of catalytic oxidation of urea presentactive catalytic species for water oxidation. The catalytic

  7. Detailed chemical kinetic oxidation mechanism for a biodiesel surrogate

    SciTech Connect (OSTI)

    Herbinet, O; Pitz, W J; Westbrook, C K

    2007-09-17

    A detailed chemical kinetic mechanism has been developed and used to study the oxidation of methyl decanoate, a surrogate for biodiesel fuels. This model has been built by following the rules established by Curran et al. for the oxidation of n-heptane and it includes all the reactions known to be pertinent to both low and high temperatures. Computed results have been compared with methyl decanoate experiments in an engine and oxidation of rapeseed oil methyl esters in a jet stirred reactor. An important feature of this mechanism is its ability to reproduce the early formation of carbon dioxide that is unique to biofuels and due to the presence of the ester group in the reactant. The model also predicts ignition delay times and OH profiles very close to observed values in shock tube experiments fueled by n-decane. These model capabilities indicate that large n-alkanes can be good surrogates for large methyl esters and biodiesel fuels to predict overall reactivity, but some kinetic details, including early CO2 production from biodiesel fuels, can be predicted only by a detailed kinetic mechanism for a true methyl ester fuel. The present methyl decanoate mechanism provides a realistic kinetic tool for simulation of biodiesel fuels.

  8. Detailed chemical kinetic oxidation mechanism for a biodiesel surrogate

    SciTech Connect (OSTI)

    Herbinet, O; Pitz, W J; Westbrook, C K

    2007-09-20

    A detailed chemical kinetic mechanism has been developed and used to study the oxidation of methyl decanoate, a surrogate for biodiesel fuels. This model has been built by following the rules established by Curran et al. for the oxidation of n-heptane and it includes all the reactions known to be pertinent to both low and high temperatures. Computed results have been compared with methyl decanoate experiments in an engine and oxidation of rapeseed oil methyl esters in a jet stirred reactor. An important feature of this mechanism is its ability to reproduce the early formation of carbon dioxide that is unique to biofuels and due to the presence of the ester group in the reactant. The model also predicts ignition delay times and OH profiles very close to observed values in shock tube experiments fueled by n-decane. These model capabilities indicate that large n-alkanes can be good surrogates for large methyl esters and biodiesel fuels to predict overall reactivity, but some kinetic details, including early CO{sub 2} production from biodiesel fuels, can be predicted only by a detailed kinetic mechanism for a true methyl ester fuel. The present methyl decanoate mechanism provides a realistic kinetic tool for simulation of biodiesel fuels.

  9. Detailed chemical kinetic oxidation mechanism for a biodiesel surrogate

    SciTech Connect (OSTI)

    Herbinet, Olivier; Pitz, William J.; Westbrook, Charles K.

    2008-08-15

    A detailed chemical kinetic mechanism has been developed and used to study the oxidation of methyl decanoate, a surrogate for biodiesel fuels. This model has been built by following the rules established by Curran and co-workers for the oxidation of n-heptane and it includes all the reactions known to be pertinent to both low and high temperatures. Computed results have been compared with methyl decanoate experiments in an engine and oxidation of rapeseed oil methyl esters in a jet-stirred reactor. An important feature of this mechanism is its ability to reproduce the early formation of carbon dioxide that is unique to biofuels and due to the presence of the ester group in the reactant. The model also predicts ignition delay times and OH profiles very close to observed values in shock tube experiments fueled by n-decane. These model capabilities indicate that large n-alkanes can be good surrogates for large methyl esters and biodiesel fuels to predict overall reactivity, but some kinetic details, including early CO{sub 2} production from biodiesel fuels, can be predicted only by a detailed kinetic mechanism for a true methyl ester fuel. The present methyl decanoate mechanism provides a realistic kinetic tool for simulation of biodiesel fuels. (author)

  10. Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

    DOE Patents [OSTI]

    Wang, Qi; Iwaniczko, Eugene

    2006-10-17

    A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.

  11. Robust Numerical Simulation of Porosity Evolution in Chemical Vapor Infiltration I: Two Space

    E-Print Network [OSTI]

    Jin, Shi

    infiltration (CVI) process is an important approach to fabricating ceramic matrix composite(CMC's). Two. In CVI a vapor precursor of the matrix material, such as methyl­ trichlorosilane (MTS), diffuses through the inter­fiber void. As matrix growth progresses, avenues for gas transport become more tortuous and begin

  12. Real-time, in situ film thickness metrology in a 10 Torr W chemical vapor deposition process using an acoustic sensor

    E-Print Network [OSTI]

    Rubloff, Gary W.

    wafer consumption.1,2 The International Technology Roadmap for Semiconductors3 places an emphasis on two chemical vapor deposition CVD reactor into an Inficon ComposerTM acoustic sensor for in situ chemical gas at 10 Torr from 340 to 400 °C using a H2 /WF6 gas mixture. Sampled gases were compressed through

  13. Design of a compact ultrahigh vacuum-compatible setup for the analysis of chemical vapor deposition processes

    SciTech Connect (OSTI)

    Weiss, Theodor; Nowak, Martin; Zielasek, Volkmar Bäumer, Marcus; Mundloch, Udo; Kohse-Höinghaus, Katharina

    2014-10-15

    Optimizing thin film deposition techniques requires contamination-free transfer from the reactor into an ultrahigh vacuum (UHV) chamber for surface science analysis. A very compact, multifunctional Chemical Vapor Deposition (CVD) reactor for direct attachment to any typical UHV system for thin film analysis was designed and built. Besides compactness, fast, easy, and at the same time ultimately clean sample transfer between reactor and UHV was a major goal. It was achieved by a combination of sample manipulation parts, sample heater, and a shutter mechanism designed to fit all into a NW38 Conflat six-ways cross. The present reactor design is versatile to be employed for all commonly employed variants of CVD, including Atomic Layer Deposition. A demonstration of the functionality of the system is provided. First results of the setup (attached to an Omicron Multiprobe x-ray photoelectron spectroscopy system) on the temperature dependence of Pulsed Spray Evaporation-CVD of Ni films from Ni acetylacetonate as the precursor demonstrate the reactor performance and illustrate the importance of clean sample transfer without breaking vacuum in order to obtain unambiguous results on the quality of CVD-grown thin Ni films. The widely applicable design holds promise for future systematic studies of the fundamental processes during chemical vapor deposition or atomic layer deposition.

  14. Graphene chemical vapor deposition at very low pressure: The impact of substrate surface self-diffusion in domain shape

    SciTech Connect (OSTI)

    Cunha, T. H. R.; Ek-Weis, J.; Lacerda, R. G.; Ferlauto, A. S., E-mail: ferlauto@fisica.ufmg.br [Department of Physics, Federal University of Minas Gerais, Belo Horizonte 31270-901 (Brazil)

    2014-08-18

    The initial stages of graphene chemical vapor deposition at very low pressures (<10{sup ?5?}Torr) were investigated. The growth of large graphene domains (?up to 100??m) at very high rates (up to 3??m{sup 2} s{sup ?1}) has been achieved in a cold-wall reactor using a liquid carbon precursor. For high temperature growth (>900?°C), graphene grain shape and symmetry were found to depend on the underlying symmetry of the Cu crystal, whereas for lower temperatures (<900?°C), mostly rounded grains are observed. The temperature dependence of graphene nucleation density was determined, displaying two thermally activated regimes, with activation energy values of 6?±?1?eV for temperatures ranging from 900?°C to 960?°C and 9?±?1?eV for temperatures above 960?°C. The comparison of such dependence with the temperature dependence of Cu surface self-diffusion suggests that graphene growth at high temperatures and low pressures is strongly influenced by copper surface rearrangement. We propose a model that incorporates Cu surface self-diffusion as an essential process to explain the orientation correlation between graphene and Cu crystals, and which can clarify the difference generally observed between graphene domain shapes in atmospheric-pressure and low-pressure chemical vapor deposition.

  15. Calibrated vapor generator source

    DOE Patents [OSTI]

    Davies, J.P.; Larson, R.A.; Goodrich, L.D.; Hall, H.J.; Stoddard, B.D.; Davis, S.G.; Kaser, T.G.; Conrad, F.J.

    1995-09-26

    A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet. 10 figs.

  16. Calibrated vapor generator source

    DOE Patents [OSTI]

    Davies, John P. (Idaho Falls, ID); Larson, Ronald A. (Idaho Falls, ID); Goodrich, Lorenzo D. (Shelley, ID); Hall, Harold J. (Idaho Falls, ID); Stoddard, Billy D. (Idaho Falls, ID); Davis, Sean G. (Idaho Falls, ID); Kaser, Timothy G. (Idaho Falls, ID); Conrad, Frank J. (Albuquerque, NM)

    1995-01-01

    A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet.

  17. Isomer-Specific Biodegradation and Chemical Oxidation of Nonylphenol

    E-Print Network [OSTI]

    Lu, Zhijiang

    2014-01-01

    in U.S. sewage sludges and chemical fate in outdoor soilendocrine disrupting chemicals by potassium permanganate inconfidential 2006 IUR company/chemical records." Retrieved

  18. A simple method to deposit palladium doped SnO{sub 2} thin films using plasma enhanced chemical vapor deposition technique

    SciTech Connect (OSTI)

    Kim, Young Soon; Wahab, Rizwan; Shin, Hyung-Shik [School of Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Ansari, S. G.; Ansari, Z. A. [Center for Interdisciplinary Research in Basic Sciences, Jamia Millia Islamia, Jamia Nagar, New Delhi 110025 (India)

    2010-11-15

    This work presents a simple method to deposit palladium doped tin oxide (SnO{sub 2}) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl{sub 4}) was used as precursor and oxygen (O{sub 2}, 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C{sub 5}HF{sub 6}O{sub 2}){sub 2}) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd{sub 2}Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 m{Omega} cm as a function of deposition temperature from 400 to 600 deg. C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature.

  19. Hydrogen Ingress in Steels During High-Temperature Oxidation in Water Vapor

    SciTech Connect (OSTI)

    Brady, Michael P [ORNL; Fayek, Mostafa [ORNL; Keiser, James R [ORNL; Meyer III, Harry M [ORNL; More, Karren Leslie [ORNL; Anovitz, Lawrence {Larry} M [ORNL; Wesolowski, David J [ORNL; Cole, David R [ORNL

    2011-01-01

    It is well established that hydrogen derived from water vapour can penetrate oxidizing alloys with detrimental effect. However, the complexities of tracking hydrogen in these materials have prevented the direct profiling of hydrogen ingress needed to understand these phenomena. Here we report hydrogen profiles in industrially-relevant alumina- and chromia- forming steels correlated with the local oxide-metal nano/microstructure by use of SIMS D2O tracer studies and experimental protocols to optimize D retention. The D profiles unexpectedly varied markedly among the alloys examined, which indicates mechanistic complexity but also the potential to mitigate detrimental water vapour effects by manipulation of alloy chemistry.

  20. Controlling single and few-layer graphene crystals growth in a solid carbon source based chemical vapor deposition

    SciTech Connect (OSTI)

    Papon, Remi; Sharma, Subash; Shinde, Sachin M.; Vishwakarma, Riteshkumar; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, 466-8555 (Japan)

    2014-09-29

    Here, we reveal the growth process of single and few-layer graphene crystals in the solid carbon source based chemical vapor deposition (CVD) technique. Nucleation and growth of graphene crystals on a polycrystalline Cu foil are significantly affected by the injection of carbon atoms with pyrolysis rate of the carbon source. We observe micron length ribbons like growth front as well as saturated growth edges of graphene crystals depending on growth conditions. Controlling the pyrolysis rate of carbon source, monolayer and few-layer crystals and corresponding continuous films are obtained. In a controlled process, we observed growth of large monolayer graphene crystals, which interconnect and merge together to form a continuous film. On the other hand, adlayer growth is observed with an increased pyrolysis rate, resulting few-layer graphene crystal structure and merged continuous film. The understanding of monolayer and few-layer crystals growth in the developed CVD process can be significant to grow graphene with controlled layer numbers.

  1. Ultra-narrow ferromagnetic resonance in organic-based thin films grown via low temperature chemical vapor deposition

    SciTech Connect (OSTI)

    Yu, H.; Harberts, M.; Adur, R.; Hammel, P. Chris; Johnston-Halperin, E., E-mail: ejh@physics.osu.edu, E-mail: epstein@physics.osu.edu [Department of Physics, The Ohio State University, Columbus, Ohio 43210-1117 (United States); Lu, Y. [Department of Chemistry, The Ohio State University, Columbus, Ohio 43210-1173 (United States); Epstein, A. J., E-mail: ejh@physics.osu.edu, E-mail: epstein@physics.osu.edu [Department of Physics, The Ohio State University, Columbus, Ohio 43210-1117 (United States); Department of Chemistry, The Ohio State University, Columbus, Ohio 43210-1173 (United States)

    2014-07-07

    We present the growth of thin films of the organic-based ferrimagnetic semiconductor V[TCNE]{sub x} (x???2, TCNE: tetracyanoethylene) via chemical vapor deposition. Under optimized growth conditions, we observe a significant increase in magnetic homogeneity, as evidenced by a Curie temperature above 600?K and sharp magnetization switching. Further, ferromagnetic resonance studies reveal a single resonance with full width at half maximum linewidth of 1.4?G, comparable to the narrowest lines measured in inorganic magnetic materials and in contrast to previous studies that showed multiple resonance features. These characteristics are promising for the development of high frequency electronic devices that take advantage of the unique properties of this organic-based material, such as the potential for low cost synthesis combined with low temperature and conformal deposition on a wide variety of substrates.

  2. ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition

    SciTech Connect (OSTI)

    Xu, W.Z.; Ye, Z.Z.; Zeng, Y.J.; Zhu, L.P.; Zhao, B.H.; Jiang, L.; Lu, J.G.; He, H.P.; Zhang, S.B. [State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2006-04-24

    We report a breakthrough in fabricating ZnO homojunction light-emitting diode by metal organic chemical vapor deposition. Using NO plasma, we are able to grow p-type ZnO thin films on n-type bulk ZnO substrates. The as-grown films on glass substrates show hole concentration of 10{sup 16}-10{sup 17} cm{sup -3} and mobility of 1-10 cm{sup 2} V{sup -1} s{sup -1}. Room-temperature photoluminescence spectra reveal nitrogen-related emissions. A typical ZnO homojunction shows rectifying behavior with a turn-on voltage of about 2.3 V. Electroluminescence at room temperature has been demonstrated with band-to-band emission at I=40 mA and defect-related emissions in the blue-yellow spectrum range.

  3. Plasma-enhanced chemical vapor deposition of graphene on copper substrates

    SciTech Connect (OSTI)

    Woehrl, Nicolas, E-mail: nicolas.woehrl@uni-due.de; Schulz, Stephan [Faculty of Chemistry and CENIDE, University Duisburg-Essen, Carl-Benz-Straße 199, 47057 Duisburg (Germany)] [Faculty of Chemistry and CENIDE, University Duisburg-Essen, Carl-Benz-Straße 199, 47057 Duisburg (Germany); Ochedowski, Oliver; Gottlieb, Steven [Faculty of Physics and CENIDE, University Duisburg Essen, Lotharstraße 1, 47057 Duisburg (Germany)] [Faculty of Physics and CENIDE, University Duisburg Essen, Lotharstraße 1, 47057 Duisburg (Germany); Shibasaki, Kosuke [Institute of Materials Science, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)] [Institute of Materials Science, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

    2014-04-15

    A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO{sub 2} substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm{sup 2}. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

  4. Distributed Porosity as a Control Parameter for Oxide Thermal Barriers Made by Physical Vapor Deposition

    E-Print Network [OSTI]

    Wadley, Haydn

    Deposition Tian Jian Lu Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, United Kingdom (typically yttria- stabilized zirconia (YSZ)), an oxidation protection metallic sub- layer, and a thermally depend upon engine design details. Usually, a lower k enables higher engine gas temperature and reduced

  5. Advanced Metallization Conference 2008 Chemical Vapor Deposition (CVD) of Manganese Self-Aligned

    E-Print Network [OSTI]

    is sputtered, and then the trenches and holes are filled with Cu by electroplating. As the dimensions that the remaining openings are narrower at the top than lower inside the features. Then the electroplating processN. If these areas are missing the Cu seed layer, then Cu electroplating will not take place on the oxidized surface

  6. Field emission properties of phosphorus doped microwave plasma chemical vapor deposition diamond films by ion implantation

    E-Print Network [OSTI]

    Lee, Jong Duk

    to the conclusion that phosphorus ions and defects in the Si­diamond interface play an important role. INTRODUCTION A new mold type diamond field emission array FEA has been fabricated on indium tin oxide ITO defects induce the split energy bands within the wide band gap of diamond and help electrons to jump

  7. VOLUME 87, NUMBER 13 P H Y S I C A L R E V I E W L E T T E R S 24 SEPTEMBER 2001 Morphology Transition during Low-Pressure Chemical Vapor Deposition

    E-Print Network [OSTI]

    Wang, Gwo-Ching

    Transition during Low-Pressure Chemical Vapor Deposition Y.-P. Zhao, Jason T. Drotar, G.-C. Wang, and T have studied, in detail, the effect of sticking coefficient on the morphology evolution in low-pressure chemical vapor deposition processes. We have shown that the surface morphology changes from a self

  8. Broadband microwave and time-domain terahertz spectroscopy of chemical vapor deposition grown graphene

    E-Print Network [OSTI]

    graphene W. Liu, R. Valdés Aguilar, Yufeng Hao, R. S. Ruoff, and N. P. Armitage Citation: J. Appl. Phys. Related Articles Edge surface modes in magnetically biased chemically doped graphene strips Appl. Phys. Lett. 99, 231902 (2011) Terahertz coherent acoustic experiments with semiconductor superlattices Appl

  9. Multiplexed mass spectrometry for real-time sensing in a spatially programmable chemical vapor deposition reactor

    E-Print Network [OSTI]

    Rubloff, Gary W.

    in understanding and controlling chemical processes used in semiconductor fabrication. Given the complexity at any desired process design point, or 2 intentional nonuniformity to accelerate process optimization. This forms the basis for using real-time mass spectrometry to drive process sensing, metrology, and control

  10. Chemically Modified Metal Oxide Nanostructure for Photoelectrochemical Water Splitting

    E-Print Network [OSTI]

    Wang, Gongming

    2013-01-01

    Abstract Hydrogen energy with high energy density representsWang Hydrogen gas is chemical fuel with high energy density,

  11. Oxidative chemical vapor deposition of semiconducting polymers and their use In organic photovoltaics

    E-Print Network [OSTI]

    Borrelli, David Christopher

    2014-01-01

    Organic photovoltaics (OPVs) have received significant interest for their potential low cost, high mechanical flexibility, and unique functionalities. OPVs employing semiconducting polymers in the photoactive layer have ...

  12. Oxidative and initiated chemical vapor deposition for application to organic electronics

    E-Print Network [OSTI]

    Im, Sung Gap

    2009-01-01

    Since the first discovery of polymeric conductors in 1977, the research area of "organic electronics" has grown dramatically. However, methods for forming thin films comprised solely of conductive polymers are limited by ...

  13. Synthesis of graphene-based nanosheets via chemical reduction of exfoliated graphite oxide

    E-Print Network [OSTI]

    for the preparation of graphene sheets from graphite. After numerous failed attempts to create graphene-based sheetsSynthesis of graphene-based nanosheets via chemical reduction of exfoliated graphite oxide Sasha of a colloidal suspension of exfoliated graphene oxide sheets in water with hydrazine hydrate results

  14. Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

    SciTech Connect (OSTI)

    Ciuk, Tymoteusz [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Cakmakyapan, Semih; Ozbay, Ekmel [Department of Electrical and Electronics Engineering, Department of Physics, Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Caban, Piotr; Grodecki, Kacper; Pasternak, Iwona; Strupinski, Wlodek, E-mail: wlodek.strupinski@itme.edu.pl [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Krajewska, Aleksandra [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Optoelectronics, Military University of Technology, Gen. S. Kaliskiego 2, 00-908 Warsaw (Poland); Szmidt, Jan [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

    2014-09-28

    The transport properties of quasi-free-standing (QFS) bilayer graphene on SiC depend on a range of scattering mechanisms. Most of them are isotropic in nature. However, the SiC substrate morphology marked by a distinctive pattern of the terraces gives rise to an anisotropy in graphene's sheet resistance, which may be considered an additional scattering mechanism. At a technological level, the growth-preceding in situ etching of the SiC surface promotes step bunching which results in macro steps ~10 nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be ~190 ??m for step height hS = 10 nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications.

  15. The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer.

    SciTech Connect (OSTI)

    Isabella J van Rooyen; Philippus M van Rooyen; Mary Lou Dunzik-Gougar

    2013-08-01

    The unique combination of thermo-mechanical and physiochemical properties of silicon carbide (SiC) provides interest and opportunity for its use in nuclear applications. One of the applications of SiC is as a very thin layer in the TRi-ISOtropic (TRISO) coated fuel particles for high temperature gas reactors (HTGRs). This SiC layer, produced by chemical vapor deposition (CVD), is designed to withstand the pressures of fission and transmutation product gases in a high temperature, radiation environment. Various researchers have demonstrated that macroscopic properties can be affected by changes in the distribution of grain boundary plane orientations and misorientations [1 - 3]. Additionally, various researchers have attributed the release behavior of Ag through the SiC layer as a grain boundary diffusion phenomenon [4 - 6]; further highlighting the importance of understanding the actual grain characteristics of the SiC layer. Both historic HTGR fission product release studies and recent experiments at Idaho National Laboratory (INL) [7] have shown that the release of Ag-110m is strongly temperature dependent. Although the maximum normal operating fuel temperature of a HTGR design is in the range of 1000-1250°C, the temperature may reach 1600°C under postulated accident conditions. The aim of this specific study is therefore to determine the magnitude of temperature dependence on SiC grain characteristics, expanding upon initial studies by Van Rooyen et al, [8; 9].

  16. Surface-texture evolution of different chemical-vapor-deposited zinc sulfide flats polished with various magnetorheological fluids

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Salzman, S.; Romanofsky, H. J.; Jacobs, S. D.; Lambropoulos, J. C.

    2015-08-19

    The macro-structure of chemical-vapor-deposited (CVD) zinc sulfide (ZnS) substrates is characterizedby cone-like structures that start growing at the early stages of deposition. As deposition progresses,these cones grow larger and reach centimeter size in height and millimeter size in width. It is challengingto polish out these features from the top layer, particularly for the magnetorheological finishing (MRF)process. A conventional MR fluid tends to leave submillimeter surface artifacts on the finished surface,which is a direct result of the cone-like structure. Here we describe the MRF process of polishing four CVD ZnS substrates, manufactured by four differentvendors, with conventional MR fluid at pHmore »10 and zirconia-coated-CI (carbonyl iron) MR fluids at pH 4, 5,and 6. We report on the surface–texture evolution of the substrates as they were MRF polished with thedifferent fluids. We show that performances of the zirconia-coated-CI MR fluid at pH 4 are significantlyhigher than that of the same fluid at pH levels of 5 and 6 and moderately higher than that of a conventionalMR fluid at pH 10. An improvement in surface–texture variability from part to part was also observedwith the pH 4 MR fluid.« less

  17. Evaluation of Novel Ceria-Supported Metal Oxides As Oxygen Carriers for Chemical-Looping Combustion

    E-Print Network [OSTI]

    Azad, Abdul-Majeed

    for copper-based materials, and at 950 °C for iron- and manganese-based materials. Methane or syngas (50% COEvaluation of Novel Ceria-Supported Metal Oxides As Oxygen Carriers for Chemical-Looping Combustion of Chemical and Biological Engineering, Chalmers University of Technology, SE-412 96 Goteborg, Sweden

  18. Chemically Modified Metal Oxide Nanostructure for Photoelectrochemical Water Splitting

    E-Print Network [OSTI]

    Wang, Gongming

    2013-01-01

    the reported solar conversion efficiency of hematitelead to a good solar conversion efficiency. 16, 24, 26, 27for urea oxidation, the solar conversion efficiency of TiO 2

  19. Cyclic catalytic upgrading of chemical species using metal oxide materials

    DOE Patents [OSTI]

    White, James H; Schutte, Erick J; Rolfe, Sara L

    2013-05-07

    Processes are disclosure which comprise alternately contacting an oxygen-carrying catalyst with a reducing substance, or a lower partial pressure of an oxidizing gas, and then with the oxidizing gas or a higher partial pressure of the oxidizing gas, whereby the catalyst is alternately reduced and then regenerated to an oxygenated state. In certain embodiments, the oxygen-carrying catalyst comprises at least one metal oxide-containing material containing a composition having the following formulas: (a) Ce.sub.xB.sub.yB'.sub.zB''O.sub..delta., wherein B=Ba, Sr, Ca, or Zr; B'=Mn, Co, and/or Fe; B''=Cu; 0.01oxides.

  20. Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments

    SciTech Connect (OSTI)

    Novikov, P. L.; Le Donne, A.; Cereda, S.; Miglio, Leo; Pizzini, S.; Binetti, S.; Montalenti, F. [Dipartimento di Scienza dei Materiali and L-NESS, Universita di Milano-Bicocca, Via Cozzi 53, 20125 Milan (Italy); Rondanini, M.; Cavallotti, C. [Dipartimento di Chimica, Materiali, e Ingegneria Chimica 'G. Natta', Politecnico di Milano, Via Mancinelli 7, 20131 Milan (Italy); Chrastina, D.; Moiseev, T.; Kaenel, H. von; Isella, G. [Dipartimento di Fisica and L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy)

    2009-02-02

    A joint theoretical and experimental analysis of the crystalline fraction in nanocrystalline films grown by low-energy plasma enhanced chemical vapor deposition is presented. The effect of key growth parameters such as temperature, silane flux, and hydrogen dilution ratio is analyzed and modeled at the atomic scale, introducing an environment-dependent crystallization probability. A very good agreement between experiments and theory is found, despite the use of a single fitting parameter.

  1. Cyclic catalytic upgrading of chemical species using metal oxide materials

    DOE Patents [OSTI]

    White, James H. (Boulder, CO); Schutte, Erick J. (Thornton, CO); Rolfe, Sara L. (Loveland, CO)

    2010-11-02

    Processes are disclosure which comprise alternately contacting an oxygen-carrying catalyst with a reducing substance, or a lower partial pressure of an oxidizing gas, and then with the oxidizing gas or a higher partial pressure of the oxidizing gas, whereby the catalyst is alternately reduced and then regenerated to an oxygenated state. In certain embodiments, the oxygen-carrying catalyst comprises at least one metal oxide-containing material containing a composition having one of the following formulas: (a) Ce.sub.xB.sub.yB'.sub.zB''O.sub..delta., wherein B=Ba, Sr, Ca, or Zr; B'=Mn, Co, or Fe; B''=Cu; 0.01

  2. Environmentally focused patterning and processing of polymer thin films by initiated chemical vapor deposition (iCVD) and oxidative chemical vapor deposition (oCVD)

    E-Print Network [OSTI]

    Trujillo, Nathan J. (Nathan Jeffrey)

    2010-01-01

    The new millennium has brought fourth many technological innovations made possible by the advancement of high speed integrated circuits. The materials and energy requirements for a microchip is orders of magnitude higher ...

  3. Robofurnace: A semi-automated laboratory chemical vapor deposition system for high-throughput nanomaterial synthesis and process discovery

    SciTech Connect (OSTI)

    Oliver, C. Ryan; Westrick, William; Koehler, Jeremy; Brieland-Shoultz, Anna; Anagnostopoulos-Politis, Ilias; Cruz-Gonzalez, Tizoc [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)] [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Hart, A. John, E-mail: ajhart@mit.edu [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2013-11-15

    Laboratory research and development on new materials, such as nanostructured thin films, often utilizes manual equipment such as tube furnaces due to its relatively low cost and ease of setup. However, these systems can be prone to inconsistent outcomes due to variations in standard operating procedures and limitations in performance such as heating and cooling rates restrict the parameter space that can be explored. Perhaps more importantly, maximization of research throughput and the successful and efficient translation of materials processing knowledge to production-scale systems, relies on the attainment of consistent outcomes. In response to this need, we present a semi-automated lab-scale chemical vapor deposition (CVD) furnace system, called “Robofurnace.” Robofurnace is an automated CVD system built around a standard tube furnace, which automates sample insertion and removal and uses motion of the furnace to achieve rapid heating and cooling. The system has a 10-sample magazine and motorized transfer arm, which isolates the samples from the lab atmosphere and enables highly repeatable placement of the sample within the tube. The system is designed to enable continuous operation of the CVD reactor, with asynchronous loading/unloading of samples. To demonstrate its performance, Robofurnace is used to develop a rapid CVD recipe for carbon nanotube (CNT) forest growth, achieving a 10-fold improvement in CNT forest mass density compared to a benchmark recipe using a manual tube furnace. In the long run, multiple systems like Robofurnace may be linked to share data among laboratories by methods such as Twitter. Our hope is Robofurnace and like automation will enable machine learning to optimize and discover relationships in complex material synthesis processes.

  4. Synergetic effects of mixed copper-iron oxides oxygen carriers in chemical looping combustion

    SciTech Connect (OSTI)

    Siriwardane, Ranjani; Tian, Hanjing; Simonyi, Thomas; Poston, James

    2013-06-01

    Chemical looping combustion (CLC) is an emerging technology for clean energy production from fuels. CLC produces sequestration-ready CO{sub 2}-streams without a significant energy penalty. Development of efficient oxygen carriers is essential to successfully operate a CLC system. Copper and iron oxides are promising candidates for CLC. Copper oxide possesses high reactivity but it has issues with particle agglomeration due to its low melting point. Even though iron oxide is an inexpensive oxygen carrier it has a slower reactivity. In this study, mixed metal oxide carriers containing iron and copper oxides were evaluated for coal and methane CLC. The components of CuO and Fe{sub 2}O{sub 3} were optimized to obtain good reactivity while maintaining physical and chemical stability during cyclic reactions for methane-CLC and solid-fuel CLC. Compared with single metal oxygen carriers, the optimized Cu–Fe mixed oxide oxygen carriers demonstrated high reaction rate, better combustion conversion, greater oxygen usage and improved physical stability. Thermodynamic calculations, XRD, TGA, flow reactor studies and TPR experiments suggested that there is a strong interaction between CuO and Fe{sub 2}O{sub 3} contributing to a synergistic effect during CLC reactions. The amount of oxygen release of the mixed oxide carrier in the absence of a fuel was similar to that of the single metal oxides. However, in the presence of fuels, the oxygen consumption and the reaction profiles of the mixed oxide carriers were significantly better than that of the single metal oxides. The nature of the fuel not only influenced the reactivity, but also the final reduction status of the oxygen carriers during chemical looping combustion. Cu oxide of the mixed oxide was fully reduced metallic copper with both coal and methane. Fe oxide of the mixed oxide was fully reduced Fe metal with methane but it was reduced to only FeO with coal. Possible mechanisms of how the presence of CuO enhances the reduction of Fe{sub 2}O{sub 3} are discussed.

  5. Application of high-resolution time-of-flight chemical ionization mass spectrometry measurements to estimate volatility distributions of ?-pinene and naphthalene oxidation products

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chhabra, P. S.; Lambe, A. T.; Canagaratna, M. R.; Stark, H.; Jayne, J. T.; Onasch, T. B.; Davidovits, P.; Kimmel, J. R.; Worsnop, D. R.

    2015-01-05

    Recent developments in high-resolution time-of-flight chemical ionization mass spectrometry (HR-ToF-CIMS) have made it possible to directly detect atmospheric organic compounds in real time with high sensitivity and with little or no fragmentation, including low-volatility, highly oxygenated organic vapors that are precursors to secondary organic aerosol formation. Here, using ions identified by high-resolution spectra from an HR-ToF-CIMS with acetate reagent ion chemistry, we develop an algorithm to estimate the vapor pressures of measured organic acids. The algorithm uses identified ion formulas and calculated double bond equivalencies, information unavailable in quadrupole CIMS technology, as constraints for the number of possible oxygen-containing functionalmore »groups. The algorithm is tested with acetate chemical ionization mass spectrometry (acetate-CIMS) spectra of O3 and OH oxidation products of ?-pinene and naphthalene formed in a flow reactor with integrated OH exposures ranged from 1.2 × 1011 to 9.7 × 1011 molec s cm?3, corresponding to approximately 1.0 to 7.5 days of equivalent atmospheric oxidation. Measured gas-phase organic acids are similar to those previously observed in environmental chamber studies. For both precursors, we find that acetate-CIMS spectra capture both functionalization (oxygen addition) and fragmentation (carbon loss) as a function of OH exposure. The level of fragmentation is observed to increase with increased oxidation. The predicted condensed-phase secondary organic aerosol (SOA) average acid yields and O/C and H/C ratios agree within uncertainties with previous chamber and flow reactor measurements and ambient CIMS results. While acetate reagent ion chemistry is used to selectively measure organic acids, in principle this method can be applied to additional reagent ion chemistries depending on the application.« less

  6. Development of nanodiamond foils for H- stripping to Support the Spallation Neutron Source (SNS) using hot filament chemical vapor deposition

    SciTech Connect (OSTI)

    Vispute, R D; Ermer, Henry K; Sinsky, Phillip; Seiser, Andrew; Shaw, Robert W; Wilson, Leslie L

    2014-01-01

    Thin diamond foils are needed in many particle accelerator experiments regarding nuclear and atomic physics, as well as in some interdisciplinary research. Particularly, nanodiamond texture is attractive for this purpose as it possesses a unique combination of diamond properties such as high thermal conductivity, mechanical strength and high radiation hardness; therefore, it is a potential material for energetic ion beam stripper foils. At the ORNL Spallation Neutron Source (SNS), the installed set of foils must be able to survive a nominal five-month operation period, without the need for unscheduled costly shutdowns and repairs. Thus, a small foil about the size of a postage stamp is critical to the operation of SNS and similar sources in U.S. laboratories and around the world. We are investigating nanocrystalline, polycrystalline and their admixture films fabricated using a hot filament chemical vapor deposition (HFCVD) system for H- stripping to support the SNS at Oak Ridge National Laboratory. Here we discuss optimization of process variables such as substrate temperature, process gas ratio of H2/Ar/CH4, substrate to filament distance, filament temperature, carburization conditions, and filament geometry to achieve high purity diamond foils on patterned silicon substrates with manageable intrinsic and thermal stresses so that they can be released as free standing foils without curling. An in situ laser reflectance interferometry tool (LRI) is used for monitoring the growth characteristics of the diamond thin film materials. The optimization process has yielded free standing foils with no pinholes. The sp3/sp2 bonds are controlled to optimize electrical resistivity to reduce the possibility of surface charging of the foils. The integrated LRI and HFCVD process provides real time information on the growth of films and can quickly illustrate growth features and control film thickness. The results are discussed in the light of development of nanodiamond foils that will be able to withstand a few MW proton beam and hopefully will be able to be used after possible future upgrades to the SNS to greater than a 3MW beam.

  7. A quantum chemical study of nitric oxide reduction by ammonia (SCR reaction) on V2O5 catalyst surface

    E-Print Network [OSTI]

    Senkan, Selim M.

    for the selective catalytic reduction (SCR) of nitric oxide by ammonia on (0 1 0) V2O5 surface represented by a V2O9; Density functional theory; DFT; V2O5 1. Introduction Selective catalytic reduction (SCR) of nitric oxideA quantum chemical study of nitric oxide reduction by ammonia (SCR reaction) on V2O5 catalyst

  8. Synthesis of SiO{sub 2}/?-SiC/graphite hybrid composite by low temperature hot filament chemical vapor deposition

    SciTech Connect (OSTI)

    Zhang, Zhikun; Bi, Kaifeng; Liu, Yanhong; Qin, Fuwen; Liu, Hongzhu; Bian, Jiming; Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050 ; Zhang, Dong; Miao, Lihua; Department of Computer and Mathematical Basic Teaching, Shenyang Medical College, Shenyan 110034

    2013-11-18

    ?-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH{sub 4} diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown ?-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO{sub 2}/?-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level.

  9. Correlation of Chemical and Mechanical Property Changes During Oxidative Degradation of Neoprene

    SciTech Connect (OSTI)

    Celina, M.; Wise, J.; Ottesen, D.K.; Gillen, K.T.; Clough, R.L.

    1999-07-01

    The thermal degradation of a commercial, stabilized, unfilled neoprene (chloroprene) rubber was investigated at temperatures up to 140 C. The degradation of this material is dominated by oxidation rather than dehydrochlorination. Important heterogeneous oxidation effects were observed at the various temperatures investigated using infrared micro-spectroscopy and modulus profiling. Intensive degradation-related spectral changes in the IR occurred in the conjugated carbonyl and hydroxyl regions. Quantitative analysis revealed some differences in the development of the IR oxidation profiles, particularly towards the sample surface. These chemical degradation profiles were compared with modulus profiles (mechanical properties). It is concluded that the profile development is fundamentally described by a diffusion-limited autoxidation mechanism. Oxygen consumption measurements showed that the oxidation rates display non-Arrhenius behavior (curvature) at low temperatures. The current results, when compared to those of a previously studied, clay-filled commercial neoprene formulation, indicate that the clay filler acts as an antioxidant, but only at low temperatures.

  10. Chemistry of ?-pinene and naphthalene oxidation products generated in a Potential Aerosol Mass (PAM) chamber as measured by acetate chemical ionization mass spectrometry

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chhabra, P. S.; Lambe, A. T.; Canagaratna, M. R.; Stark, H.; Jayne, J. T.; Onasch, T. B.; Davidovits, P.; Kimmel, J. R.; Worsnop, D. R.

    2014-07-01

    Recent developments in high resolution, time-of-flight chemical ionization mass spectrometry (HR-ToF-CIMS) have made possible the direct detection of atmospheric organic compounds in real-time with high sensitivity and with little or no fragmentation, including low volatility, highly oxygenated organic vapors that are precursors to secondary organic aerosol formation. Here, for the first time, we examine gas-phase O3 and OH oxidation products of ?-pinene and naphthalene formed in the PAM flow reactor with an HR-ToF-CIMS using acetate reagent ion chemistry. Integrated OH exposures ranged from 1.2 × 1011 to 9.7 × 1011 molec cm?3 s, corresponding to approximately 1.0 to 7.5 daysmore »of equivalent atmospheric oxidation. Measured gas-phase organic acids are similar to those previously observed in environmental chamber studies. For both precursors, we find that acetate-CIMS spectra capture both functionalization (oxygen addition) and fragmentation (carbon loss) as a function of OH exposure. The level of fragmentation is observed to increase with increased oxidation. We present a method that estimates vapor pressures of organic molecules using the measured O/C ratio, H/C ratio, and carbon number for each compound detected by the CIMS. The predicted condensed-phase SOA average acid yields and O/C and H/C ratios agree within uncertainties with previous AMS measurements and ambient CIMS results. While acetate reagent ion chemistry is used to selectively measure organic acids, in principle this method can be applied to additional reagent ion chemistries depending on the application.« less

  11. Screening values for Non-Carcinogenic Hanford Waste Tank Vapor Chemicals that Lack Established Occupational Exposure Limits

    SciTech Connect (OSTI)

    Poet, Torka S.; Mast, Terryl J.; Huckaby, James L.

    2006-02-06

    Over 1,500 different volatile chemicals have been reported in the headspaces of tanks used to store high-level radioactive waste at the U.S. Department of Energy's Hanford Site. Concern about potential exposure of tank farm workers to these chemicals has prompted efforts to evaluate their toxicity, identify chemicals that pose the greatest risk, and incorporate that information into the tank farms industrial hygiene worker protection program. Established occupation exposure limits for individual chemicals and petroleum hydrocarbon mixtures have been used elsewhere to evaluate about 900 of the chemicals. In this report headspace concentration screening values were established for the remaining 600 chemicals using available industrial hygiene and toxicological data. Screening values were intended to be more than an order of magnitude below concentrations that may cause adverse health effects in workers, assuming a 40-hour/week occupational exposure. Screening values were compared to the maximum reported headspace concentrations.

  12. Guidance Document Fume hoods are used when handling toxic or hazardous chemicals. Harmful gases, vapors and fumes

    E-Print Network [OSTI]

    Guidance Document FumeHoods Fume hoods are used when handling toxic or hazardous chemicals. Harmful hood should be used in the following situations: when handling chemicals with inhalation hazards be a hazard in themselves. Excess containers and equipment can impede airflow. If hoses or cords must

  13. Study of the effect of the acid-base surface properties of ZnO, Fe{sub 2}O{sub 3} and ZnFe{sub 2}O{sub 4} oxides on their gas sensitivity to ethanol vapor

    SciTech Connect (OSTI)

    Karpova, S. S. Moshnikov, V. A.; Maksimov, A. I.; Mjakin, S. V.; Kazantseva, N. E.

    2013-08-15

    Binary (ZnO, Fe{sub 2}O{sub 3}) and ternary (ZnFe{sub 2}O{sub 4}) gas-sensitive oxide materials are synthesized, and the correlation between their sensitivity to ethanol vapor and the functional chemical composition of the surface is studied by X-ray photoelectron spectroscopy and by the technique of the adsorption of acid-base indicators. It is found that the sensitivity to ethanol increases with increasing content of Broensted acid sites with the acidity index pK{sub a} Almost-Equal-To 2.5 and with increasing percentage of surface oxygen involved in OH/CO{sub 3}/C-O groups. This interrelation is attributed to the specific features of interaction between ethanol molecules and hydroxyl groups on the surface of the oxides.

  14. Synthesis of Metal Oxide Nanomaterials for Chemical Sensors by Molecular Beam Epitaxy

    SciTech Connect (OSTI)

    Nandasiri, Manjula I.; Kuchibhatla, Satyanarayana V N T; Thevuthasan, Suntharampillai

    2013-12-01

    Since the industrial revolution, detection and monitoring of toxic matter, chemical wastes, and air pollutants has become an important environmental issue. Thus, it leads to the development of chemical sensors for various environmental applications. The recent disastrous oil spills over the near-surface of ocean due to the offshore drilling emphasize the use of chemical sensors for prevention and monitoring of the processes that might lead to these mishaps.1, 2 Chemical sensors operated on a simple principle that the sensing platform undergoes a detectable change when exposed to the target substance to be sensed. Among all the types of chemical sensors, solid state gas sensors have attracted a great deal of attention due to their advantages such as high sensitivity, greater selectivity, portability, high stability and low cost.3, 4 Especially, semiconducting metal oxides such as SnO2, TiO2, and WO3 have been widely used as the active sensing platforms in solid state gas sensors.5 For the enhanced properties of solid state gas sensors, finding new sensing materials or development of existing materials will be needed. Thus, nanostructured materials such as nanotubes,6-8 nanowires,9-11 nanorods,12-15 nanobelts,16, 17 and nano-scale thin films18-23 have been synthesized and studied for chemical sensing applications.

  15. Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

    SciTech Connect (OSTI)

    Michon, A.; Vezian, S.; Portail, M.; Ouerghi, A.; Zielinski, M.; Chassagne, T.

    2010-10-25

    We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000-1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate.

  16. Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS{sub 2}/graphene hetero-structures by chemical vapor depositions

    SciTech Connect (OSTI)

    Lin, Meng-Yu [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Chang, Chung-En [Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan (China); Wang, Cheng-Hung [Institute of Display, National Chiao-Tung University, Hsinchu, Taiwan (China); Su, Chen-Fung; Chen, Chi [Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Lee, Si-Chen [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Lin, Shih-Yen, E-mail: shihyen@gate.sinica.edu.tw [Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Department of Photonics, National Chiao-Tung University, Hsinchu, Taiwan (China)

    2014-08-18

    Uniform large-size MoS{sub 2}/graphene hetero-structures fabricated directly on sapphire substrates are demonstrated with layer-number controllability by chemical vapor deposition (CVD). The cross-sectional high-resolution transmission electron microscopy (HRTEM) images provide the direct evidences of layer numbers of MoS{sub 2}/graphene hetero-structures. Photo-excited electron induced Fermi level shift of the graphene channel are observed on the single MoS{sub 2}/graphene hetero-structure transistors. Furthermore, double hetero-structures of graphene/MoS{sub 2}/graphene are achieved by CVD fabrication of graphene layers on top of the MoS{sub 2}, as confirmed by the cross-sectional HRTEM. These results have paved the possibility of epitaxially grown multi-hetero-structures for practical applications.

  17. Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

    SciTech Connect (OSTI)

    Hosalli, A. M.; Van Den Broeck, D. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)

    2013-12-02

    We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on the inverted Ga-polar surface.

  18. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    SciTech Connect (OSTI)

    Dutta, P. Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V.; Zheng, N.; Ahrenkiel, P.; Martinez, J.

    2014-09-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ?10{sup 7?}cm{sup ?2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300?cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  19. Atmospheric Pressure Chemical Vapor Deposition of High Silica SiO2-TiO2 Antireflective Thin Films for Glass Based Solar Panels

    SciTech Connect (OSTI)

    Klobukowski, Erik R; Tenhaeff, Wyatt E; McCamy, James; Harris, Caroline; Narula, Chaitanya Kumar

    2013-01-01

    The atmospheric pressure chemical vapor deposition (APCVD) of SiO2-TiO2 thin films employing [[(tBuO)3Si]2O-Ti(OiPr)2], which can be prepared from commercially available materials, results in antireflective thin films on float glass under industrially relevant manufacturing conditions. It was found that while the deposition temperature had an effect on the SiO2:TiO2 ratio, the thickness was dependent on the time of deposition. This study shows that it is possible to use APCVD employing a single source precursor containing titanium and silicon to produce thin films on float glass with high SiO2:TiO2 ratios.

  20. Microwave Plasma Chemical Vapor Deposition of Nano-Structured Sn/C Composite Thin-Film Anodes for Li-ion Batteries

    SciTech Connect (OSTI)

    Stevenson, Cynthia; Marcinek, M.; Hardwick, L.J.; Richardson, T.J.; Song, X.; Kostecki, R.

    2008-02-01

    In this paper we report results of a novel synthesis method of thin-film composite Sn/C anodes for lithium batteries. Thin layers of graphitic carbon decorated with uniformly distributed Sn nanoparticles were synthesized from a solid organic precursor Sn(IV) tert-butoxide by a one step microwave plasma chemical vapor deposition (MPCVD). The thin-film Sn/C electrodes were electrochemically tested in lithium half cells and produced a reversible capacity of 440 and 297 mAhg{sup -1} at C/25 and 5C discharge rates, respectively. A long term cycling of the Sn/C nanocomposite anodes showed 40% capacity loss after 500 cycles at 1C rate.

  1. Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

    SciTech Connect (OSTI)

    Bryan, Z; Bryan, I; Gaddy, BE; Reddy, P; Hussey, L; Bobea, M; Guo, W; Hoffmann, M; Kirste, R; Tweedie, J; Gerhold, M; Irving, DL; Sitar, Z; Collazo, R

    2014-12-01

    A Fermi-level control scheme for point defect management using above-bandgap UV illumination during growth is presented. We propose an extension to the analogy between the Fermi level and the electrochemical potential such that the electrochemical potential of a charged defect in a material with steady-state populations of free charge carriers may be expressed in terms of the quasi-Fermi levels. A series of highly Si-doped Al0.65Ga0.35N films grown by metalorganic chemical vapor deposition with and without UV illumination showed that samples grown under UV illumination had increased free carrier concentration, free carrier mobility, and reduced midgap photoluminescence all indicating a reduction in compensating point defects. (c) 2014 AIP Publishing LLC.

  2. Chemically sensitive polymer-mediated nanoporous alumina SAW sensors for the detection of vapor-phase analytes 

    E-Print Network [OSTI]

    Perez, Gregory Paul

    2005-08-29

    We have investigated the chemical sensitivity of nanoporous (NP) alumina-coated surface acoustic wave (SAW) devices that have been surface-modified with polymeric mediating films. The research in this dissertation covers the refinement of the NP...

  3. Copolymerization of divinylbenzene and 4-vinylpyridine using initiated chemical vapor deposition for surface modification and its applications

    E-Print Network [OSTI]

    Martinez, Ernesto, S.B. Massachusetts Institute of Technology

    2013-01-01

    This research investigates the copolymerization of divinylbenzene and 4- vinylpyridine into organic thin films that exhibit conformal, stable, and uniform surface properties. Thin films were grown using initiated chemical ...

  4. Detailed chemical kinetic mechanism for the oxidation of biodiesel fuels blend surrogate

    SciTech Connect (OSTI)

    Herbinet, Olivier; Pitz, William J.; Westbrook, Charles K.

    2010-05-15

    Detailed chemical kinetic mechanisms were developed and used to study the oxidation of two large unsaturated esters: methyl-5-decenoate and methyl-9-decenoate. These models were built from a previous methyl decanoate mechanism and were compared with rapeseed oil methyl esters oxidation experiments in a jet-stirred reactor. A comparative study of the reactivity of these three oxygenated compounds was performed and the differences in the distribution of the products of the reaction were highlighted showing the influence of the presence and the position of a double bond in the chain. Blend surrogates, containing methyl decanoate, methyl-5-decenoate, methyl-9-decenoate and n-alkanes, were tested against rapeseed oil methyl esters and methyl palmitate/n-decane experiments. These surrogate models are realistic kinetic tools allowing the study of the combustion of biodiesel fuels in diesel and homogeneous charge compression ignition engines. (author)

  5. Detailed chemical kinetic mechanism for the oxidation of biodiesel fuels blend surrogate.

    SciTech Connect (OSTI)

    Herbinet, O; Pitz, W J; Westbrook, C K

    2009-07-21

    Detailed chemical kinetic mechanisms were developed and used to study the oxidation of two large unsaturated esters: methyl-5-decenoate and methyl-9-decenoate. These models were built from a previous methyl decanoate mechanism and were compared with rapeseed oil methyl esters oxidation experiments in a jet stirred reactor. A comparative study of the reactivity of these three oxygenated compounds was performed and the differences in the distribution of the products of the reaction were highlighted showing the influence of the presence and the position of a double bond in the chain. Blend surrogates, containing methyl decanoate, methyl-5-decenoate, methyl-9-decenoate and n-alkanes, were tested against rapeseed oil methyl esters and methyl palmitate/n-decane experiments. These surrogate models are realistic kinetic tools allowing the study of the combustion of biodiesel fuels in diesel and homogeneous charge compression ignition engines.

  6. Application of a Quantum Cascade Laser for Time-Resolved, in Situ Probing of CH4/H2 and C2H2/H2 Gas Mixtures during Microwave Plasma Enhanced Chemical Vapor

    E-Print Network [OSTI]

    Bristol, University of

    , for example, microwave (MW) or arc-jet plasmas, or the surface of a hot filament (HF). Activation leads Mixtures during Microwave Plasma Enhanced Chemical Vapor Deposition of Diamond A. Cheesman, J. A. Smith of the chemistry prevailing in microwave plasma activated hydrocarbon/Ar/H2 gas mixtures used for diamond thin film

  7. Chemical Synthesis of Nano-Sized particles of Lead Oxide and their Characterization Studies

    E-Print Network [OSTI]

    M. Alagar; T. Theivasanthi; A. Kubera Raja

    2012-04-04

    The quantum dots of semiconductor display novel and interesting phenomena that have not been in the bulk material. The color tunability is one of the most attractive characteristics in II-VI semiconductor nanoparticles such as CdS, ZnS, CdSe, ZnSe and PbO. In this work, the semiconductor lead oxide nanoparticles are prepared by chemical method. The average particle size, specific surface area, crystallinity index are estimated from XRD analysis. The structural, functional groups and optical characters are analyzed with using of SEM, FTIR and UV- Visible techniques. The optical band gap value has also been determined.

  8. Chemical Synthesis of Nano-Sized particles of Lead Oxide and their Characterization Studies

    E-Print Network [OSTI]

    Alagar, M; Raja, A Kubera; 10.3923/jas.2012.398.401

    2012-01-01

    The quantum dots of semiconductor display novel and interesting phenomena that have not been in the bulk material. The color tunability is one of the most attractive characteristics in II-VI semiconductor nanoparticles such as CdS, ZnS, CdSe, ZnSe and PbO. In this work, the semiconductor lead oxide nanoparticles are prepared by chemical method. The average particle size, specific surface area, crystallinity index are estimated from XRD analysis. The structural, functional groups and optical characters are analyzed with using of SEM, FTIR and UV- Visible techniques. The optical band gap value has also been determined.

  9. Synthesis of carbon nanotubes on diamond-like carbon by the hot filament plasma-enhanced chemical vapor deposition method

    E-Print Network [OSTI]

    Hong, Byungyou

    , scanning probes, nanoscale electronic devices, hydrogen storage, chemical sensors, and composite., 1995). These properties make CNTs good candidates for many applications such as field emission devices on a nanostructured transition metal catalyst such as Co, Ni, or Fe. The growth mechanisms of CNTs are divided

  10. Direct Growth Graphene on Cu Nanoparticles by Chemical Vapor Deposition as Surface-Enhanced Raman Scattering Substrate for Label-Free Detection of Adenosine

    E-Print Network [OSTI]

    Xu, Shicai; Jiang, Shouzhen; Wang, Jihua; Wei, Jie; Xu, Shida; Liu, Hanping

    2015-01-01

    We present a graphene/Cu nanoparticle hybrids (G/CuNPs) system as a surface-enhanced Raman scattering (SERS) substrate for adenosine detection. The Cu nanoparticles wrapped around a monolayer graphene shell were directly synthesized on flat quartz by chemical vapor deposition in a mixture of methane and hydrogen. The G/CuNPs showed an excellent SERS enhancement activity for adenosine. The minimum detected concentration of the adenosine in serum was demonstrated as low as 5 nM, and the calibration curve showed a good linear response from 5 to 500 nM. The capability of SERS detection of adenosine in real normal human urine samples based on G/CuNPs was also investigated and the characteristic peaks of adenosine were still recognizable. The reproducible and the ultrasensitive enhanced Raman signals could be due to the presence of an ultrathin graphene layer. The graphene shell was able to enrich and fix the adenosine molecules, which could also efficiently maintain chemical and optical stability of G/CuNPs. Based...

  11. Study of the effects of noisy data on the determination of the enthalpy of vaporization from a vapor pressure equation 

    E-Print Network [OSTI]

    Casserly, Thomas Bryan

    2013-02-22

    Chemical engineers use software tools everyday to aid them in solving complex problems. Software packages simulate virtually every aspect of a chemical process, including the use of source vapor pressure data to fit empirical constants of a vapor...

  12. VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS

    SciTech Connect (OSTI)

    Eric M. Suuberg; Vahur Oja

    1997-07-01

    This project had as its main focus the determination of vapor pressures of coal pyrolysis tars. It involved performing measurements of these vapor pressures and from them, developing vapor pressure correlations suitable for use in advanced pyrolysis models (those models which explicitly account for mass transport limitations). This report is divided into five main chapters. Each chapter is a relatively stand-alone section. Chapter A reviews the general nature of coal tars and gives a summary of existing vapor pressure correlations for coal tars and model compounds. Chapter B summarizes the main experimental approaches for coal tar preparation and characterization which have been used throughout the project. Chapter C is concerned with the selection of the model compounds for coal pyrolysis tars and reviews the data available to us on the vapor pressures of high boiling point aromatic compounds. This chapter also deals with the question of identifying factors that govern the vapor pressures of coal tar model materials and their mixtures. Chapter D covers the vapor pressures and heats of vaporization of primary cellulose tars. Chapter E discusses the results of the main focus of this study. In summary, this work provides improved understanding of the volatility of coal and cellulose pyrolysis tars. It has resulted in new experimentally verified vapor pressure correlations for use in pyrolysis models. Further research on this topic should aim at developing general vapor pressure correlations for all coal tars, based on their molecular weight together with certain specific chemical characteristics i.e. hydroxyl group content.

  13. Survey: Destruction of chemical agent simulants in supercritical water oxidation. Master's thesis

    SciTech Connect (OSTI)

    Blank, M.R.

    1992-07-01

    The supercritical water oxidation (SCWO) process exhibits distinct advantages for destruction of toxic wastes. Examples of these wastes are two chemical agent simulants, dimethyl methylphosphonate (DMMP) and thiodiglycol (2,2'-thiodiethanol). DMMP is similar to the nerve agent GB Sarin in structure, and thiodiglycol is a hydrolysis product of the blister agent HD Sulfur Mustard. Both simulants are miscible in water and relatively non-toxic in comparison to the actual chemical agents. Using a Laboratory-scale, batch three temperatures were investigated: 425 deg C, 450 deg C, and 500 deg C with an initial concentration of one percent by volume, 11,450 mg/L for DMMP and 12,220 mg/L for thiodiglycol. Residence times investigated were: 1, 2, 3, 6, and 8 minutes. Reactor beat-up (H.U.) was determined to be one minute. Both pyrolysis and oxidation tests were conducted. Oxygen levels were uniformly set at 200% of stoichiometric requirements for the parent compounds.

  14. Development of hybrid organic-inorganic light emitting diodes using conducting polymers deposited by oxidative chemical vapor deposition process

    E-Print Network [OSTI]

    Chelawat, Hitesh

    2010-01-01

    Difficulties with traditional methods of synthesis and film formation for conducting polymers, many of which are insoluble, motivate the development of CVD methods. Indeed, conjugated polymers with rigid linear backbones ...

  15. Growth, microstructure, and field-emission properties of synthesized diamond film on adamantane-coated silicon substrate by microwave plasma chemical vapor deposition

    SciTech Connect (OSTI)

    Tiwari, Rajanish N.; Chang Li

    2010-05-15

    Diamond nucleation on unscratched Si surface is great importance for its growth, and detailed understanding of this process is therefore desired for many applications. The pretreatment of the substrate surface may influence the initial growth period. In this study, diamond films have been synthesized on adamantane-coated crystalline silicon {l_brace}100{r_brace} substrate by microwave plasma chemical vapor deposition from a gaseous mixture of methane and hydrogen gases without the application of a bias voltage to the substrates. Prior to adamantane coating, the Si substrates were not pretreated such as abraded/scratched. The substrate temperature was {approx}530 deg. C during diamond deposition. The deposited films are characterized by scanning electron microscopy, Raman spectrometry, x-ray diffraction, and x-ray photoelectron spectroscopy. These measurements provide definitive evidence for high-crystalline quality diamond film, which is synthesized on a SiC rather than clean Si substrate. Characterization through atomic force microscope allows establishing fine quality criteria of the film according to the grain size of nanodiamond along with SiC. The diamond films exhibit a low-threshold (55 V/{mu}m) and high current-density (1.6 mA/cm{sup 2}) field-emission (FE) display. The possible mechanism of formation of diamond films and their FE properties have been demonstrated.

  16. Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

    SciTech Connect (OSTI)

    Michon, A.; Vezian, S.; Roudon, E.; Lefebvre, D.; Portail, M.; Zielinski, M.; Chassagne, T.

    2013-05-28

    Graphene growth from a propane flow in a hydrogen environment (propane-hydrogen chemical vapor deposition (CVD)) on SiC differentiates from other growth methods in that it offers the possibility to obtain various graphene structures on the Si-face depending on growth conditions. The different structures include the (6{radical}3 Multiplication-Sign 6{radical}3)-R30 Degree-Sign reconstruction of the graphene/SiC interface, which is commonly observed on the Si-face, but also the rotational disorder which is generally observed on the C-face. In this work, growth mechanisms leading to the formation of the different structures are studied and discussed. For that purpose, we have grown graphene on SiC(0001) (Si-face) using propane-hydrogen CVD at various pressure and temperature and studied these samples extensively by means of low energy electron diffraction and atomic force microscopy. Pressure and temperature conditions leading to the formation of the different structures are identified and plotted in a pressure-temperature diagram. This diagram, together with other characterizations (X-ray photoemission and scanning tunneling microscopy), is the basis of further discussions on the carbon supply mechanisms and on the kinetics effects. The entire work underlines the important role of hydrogen during growth and its effects on the final graphene structure.

  17. Effects of thermal annealing on the structural, mechanical, and tribological properties of hard fluorinated carbon films deposited by plasma enhanced chemical vapor deposition

    SciTech Connect (OSTI)

    Maia da Costa, M.E.H.; Baumvol, I.J.R.; Radke, C.; Jacobsohn, L.G.; Zamora, R.R.M.; Freire, F.L. Jr. [Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, Cx. Postal 3807, Rio de Janeiro, RJ, 22453-970 (Brazil); Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS, 91540-000 (Brazil); Los Alamos National Laboratory, Materials Science and Technology Division, P. O. Box 1663, Los Alamos, New Mexico 87545 (United States); Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, Cx. Postal 3807, Rio de Janeiro, RJ, 22453-970 (Brazil)

    2004-11-01

    Hard amorphous fluorinated carbon films (a-C:F) deposited by plasma enhanced chemical vapor deposition were annealed in vacuum for 30 min in the temperature range of 200-600 deg. C. The structural and compositional modifications were followed by several analytical techniques: Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Nanoidentation measurements and lateral force microscopy experiments were carried out in order to provide the film hardness and the friction coefficient, respectively. The internal stress and contact angle were also measured. RBS, ERDA, and XPS results indicate that both fluorine and hydrogen losses occur for annealing temperatures higher than 300 deg. C. Raman spectroscopy shows a progressive graphitization upon annealing, while the surface became slightly more hydrophobic as revealed by the increase of the contact angle. Following the surface wettability reduction, a decrease of the friction coefficient was observed. These results highlight the influence of the capillary condensation on the nanoscale friction. The film hardness and the internal stress are constant up to 300 deg. C and decrease for higher annealing temperatures, showing a direct correlation with the atomic density of the films. Since the thickness variation is negligible, the mass loss upon thermal treatment results in amorphous structures with a lower degree of cross-linking, explaining the deterioration of the mechanical properties of the a-C:F films.

  18. Low-temperature growth and orientational control in RuO{sub 2} thin films by metal-organic chemical vapor deposition

    SciTech Connect (OSTI)

    Bai, G.R.; Wang, A.; Foster, C.M.; Vetrone, J.; Patel, J.; Wu, X.

    1996-08-01

    For growth temperatures in the range of 275 C to 425 C, highly conductive RuO{sub 2} thin films with either (110)- or (101)-textured orientations have been grown by metal-organic chemical vapor deposition (MOCVD) on both SiO{sub 2}/Si(001) and Pt/Ti/SiO{sub 2}/Si(001) substrates. Both the growth temperature and growth rate were used to control the type and degree of orientational texture of the RuO{sub 2} films. In the upper part of this growth temperature range ({approximately} 350 C) and at a low growth rate (< 30 {angstrom}/min.), the RuO{sub 2} films favored a (110)-textured. In contrast, at the lower part of this growth temperature range ({approximately} 300 C) and at a high growth rate (> 30 {angstrom}/min.), the RuO{sub 2} films favored a (101)-textured. In contrast, a higher growth temperatures (> 425 C) always produced randomly-oriented polycrystalline films. For either of these low-temperature growth processes, the films produced were crack-free, well-adhered to the substrates, and had smooth, specular surfaces. Atomic force microscopy showed that the films had a dense microstructure with an average grain size of 50--80 nm and a rms. surface roughness of {approximately} 3--10 nm. Four-probe electrical transport measurements showed that the films were highly conductive with resistivities of 34--40 {micro}{Omega}-cm ({at} 25 C).

  19. Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study

    SciTech Connect (OSTI)

    Chen, R. S. [Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Tsai, H. Y. [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Huang, Y. S. [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Chen, Y. T. [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Chen, L. C. [Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China); Chen, K. H. [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China)

    2012-09-10

    The normalized gains, which determines the intrinsic photoconduction (PC) efficiencies, have been defined and compared for the gallium nitride (GaN) nanowires (NWs) grown by chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). By excluding the contributions of experimental parameters and under the same light intensity, the CVD-grown GaN NWs exhibit the normalized gain which is near two orders of magnitude higher than that of the MBE-ones. The temperature-dependent time-resolved photocurrent measurement further indicates that the higher photoconduction efficiency in the CVD-GaN NWs is originated from the longer carrier lifetime induced by the higher barrier height ({phi}{sub B} = 160 {+-} 30 mV) of surface band bending. In addition, the experimentally estimated barrier height at 20 {+-} 2 mV for the MBE-GaN NWs, which is much lower than the theoretical value, is inferred to be resulted from the lower density of charged surface states on the non-polar side walls.

  20. Wear Mechanism of Chemical Vapor Deposition (CVD) Carbide Insert in Orthogonal Cutting Ti-6Al-4V ELI at High Cutting Speed

    SciTech Connect (OSTI)

    Gusri, A. I.; Che Hassan, C. H.; Jaharah, A. G.

    2011-01-17

    The performance of Chemical Vapor Deposition (CVD) carbide insert with ISO designation of CCMT 12 04 04 LF, when turning titanium alloys was investigated. There were four layers of coating materials for this insert i.e.TiN-Al2O3-TiCN-TiN. The insert performance was evaluated based on the insert's edge resistant towards the machining parameters used at high cutting speed range of machining Ti-6Al-4V ELI. Detailed study on the wear mechanism at the cutting edge of CVD carbide tools was carried out at cutting speed of 55-95 m/min, feed rate of 0.15-0.35 mm/rev and depth of cut of 0.10-0.20 mm. Wear mechanisms such as abrasive and adhesive were observed on the flank face. Crater wear due to diffusion was also observed on the rake race. The abrasive wear occurred more at nose radius and the fracture on tool were found at the feed rate of 0.35 mm/rev and the depth of cut of 0.20 mm. The adhesion wear takes place after the removal of the coating or coating delaminating. Therefore, adhesion or welding of titanium alloy onto the flank and rake faces demonstrates a strong bond at the workpiece-tool interface.

  1. Studies on the chemical synthesis and characterization of lead oxide nanoparticles with different organic capping agents

    SciTech Connect (OSTI)

    Arulmozhi, K. T., E-mail: arulsheelphy@gmail.com [Physics Wing (DDE), Annamalai University, Tamil Nadu, India - 608 002 (India); Mythili, N. [Department of Physics, Annamalai University, Tamil Nadu, India - 608 002 (India)] [Department of Physics, Annamalai University, Tamil Nadu, India - 608 002 (India)

    2013-12-15

    Lead oxide (PbO) nanoparticles were chemically synthesized using Lead (II) acetate as precursor. The effects of organic capping agents such as Oleic acid, Ethylene Diamine Tetra Acetic acid (EDTA) and Cetryl Tri Methyl Butoxide (CTAB) on the size and morphology of the nanoparticles were studied. Characterization techniques such as X-ray diffraction (XRD), Fourier Transform-Infrared spectroscopy (FT-IR), Photoluminescence (PL) Field Emission Scanning Electron Microscopy (FE-SEM), Energy Dispersive Spectroscopy (EDS) and Transmission Electron Microscopy (TEM) were used to analyse the prepared nanoparticles for their physical, structural and optical properties. The characterization studies reveal that the synthesized PbO nanoparticles had well defined crystalline structure and sizes in the range of 25 nm to 36 nm for capping agents used and 40 nm for pure PbO nanoparticles.

  2. Growth of tungsten oxide on carbon nanowalls templates

    SciTech Connect (OSTI)

    Wang, Hua; Su, Yan; Chen, Shuo; Quan, Xie

    2013-03-15

    Highlights: ? Tungsten oxide deposited on carbon nanowalls by hot filament chemical vapor deposition technique. ? This composite has two-dimensional uniform morphology with a crystalline structure of monoclinic tungsten trioxide. ? Surface photoelectric voltage measurements show that this product has photoresponse properties. - Abstract: In the present work we present a simple approach for coupling tungsten oxide with carbon nanowalls. The two-dimensional carbon nanowalls with open boundaries were grown using plasma enhanced hot filament chemical vapor deposition, and the subsequent tungsten oxide growth was performed in the same equipment by direct heating of a tungsten filament. The tungsten oxide coating is found to have uniform morphology with a crystalline structure of monoclinic tungsten trioxide. Surface photoelectric voltage measurements show that this product has photoresponse properties. The method of synthesis described here provides an operable route to the production of two-dimensional tungsten oxide nanocomposites.

  3. Please cite this article in press as: W. Wu, et al., Wafer-scale synthesis of graphene by chemical vapor deposition and its application in hydrogen sensing, Sens. Actuators B: Chem. (2010), doi:10.1016/j.snb.2010.06.070

    E-Print Network [OSTI]

    Bao, Jiming

    2010-01-01

    with a 1 nm palladium film deposited for hydrogen detection. Hydrogen in air with concentrations in 0 vapor deposition and its application in hydrogen sensing, Sens. Actuators B: Chem. (2010), doi:10.1016/j.elsevier.com/locate/snb Wafer-scale synthesis of graphene by chemical vapor deposition and its application in hydrogen sensing

  4. Co-generation of electricity and chemicals from propane fuel in solid oxide fuel cells with anode containing nano-bimetallic catalyst

    E-Print Network [OSTI]

    Frenkel, Anatoly

    as an anode in direct propane fueled solid oxide fuel cells (SOFCs). After exposure of the initial single systems. Ó 2014 Elsevier B.V. All rights reserved. 1. Introduction Solid oxide fuel cells (SOFCsCo-generation of electricity and chemicals from propane fuel in solid oxide fuel cells with anode

  5. The Progress on Low-Cost, High-Quality, High-Temperature Superconducting Tapes Deposited by the Combustion Chemical Vapor Deposition Process

    SciTech Connect (OSTI)

    Shoup, S.S.; White, M.K.; Krebs, S.L.; Darnell, N.; King, A.C.; Mattox, D.S.; Campbell, I.H.; Marken, K.R.; Hong, S.; Czabaj, B.; Paranthaman, M.; Christen, H.M.; Zhai, H.-Y. Specht, E.

    2008-06-24

    The innovative Combustion Chemical Vapor Deposition (CCVD) process is a non-vacuum technique that is being investigated to enable next generation products in several application areas including high-temperature superconductors (HTS). In combination with the Rolling Assisted Biaxially Textured Substrate (RABiTS) technology, the CCVD process has significant promise to provide low-cost, high-quality lengths of YBCO coated conductor. Over 100 meter lengths of both Ni and Ni-W (3 at. Wt.%) substrates with a surface roughness of 12-18 nm were produced. The CCVD technology has been used to deposit both buffer layer coatings as well as YBCO superconducting layers. Buffer layer architecture of strontium titanate (SrTiO{sub 3}) and ceria (CeO{sub 2}) have been deposited by CCVD on textured nickel substrates and optimized to appropriate thicknesses and microstructures to provide templates for growing PLD YBCO with a J{sub c} of 1.1 MA/cm{sup 2} at 77 K and self-field. The CCVD buffer layers have been scaled to meter plus lengths with good epitaxial uniformity along the length. A short sample cut from one of the lengths enabled high critical current density PLD YBCO. Films of CCVD YBCO superconductors have been grown on single crystal substrates with critical current densities over 1 MA/cm{sup 2}. In addition, superconducting YBCO films with an I{sub c} of 60 A/cm-width (J{sub c} = 1.5 MA/cm{sup 2}) were grown on ORNL RABiTS (CeO{sub 2}/YSZ/Y{sub 2}O{sub 3}/Ni/Ni-3W) using CCVD process.

  6. SPIN (Version 3. 83): A Fortran program for modeling one-dimensional rotating-disk/stagnation-flow chemical vapor deposition reactors

    SciTech Connect (OSTI)

    Coltrin, M.E. ); Kee, R.J.; Evans, G.H.; Meeks, E.; Rupley, F.M.; Grcar, J.F. )

    1991-08-01

    In rotating-disk reactor a heated substrate spins (at typical speeds of 1000 rpm or more) in an enclosure through which the reactants flow. The rotating disk geometry has the important property that in certain operating regimes{sup 1} the species and temperature gradients normal to the disk are equal everywhere on the disk. Thus, such a configuration has great potential for highly uniform chemical vapor deposition (CVD),{sup 2--5} and indeed commercial rotating-disk CVD reactors are now available. In certain operating regimes, the equations describing the complex three-dimensional spiral fluid motion can be solved by a separation-of-variables transformation{sup 5,6} that reduces the equations to a system of ordinary differential equations. Strictly speaking, the transformation is only valid for an unconfined infinite-radius disk and buoyancy-free flow. Furthermore, only some boundary conditions are consistent with the transformation (e.g., temperature, gas-phase composition, and approach velocity all specified to be independent of radius at some distances above the disk). Fortunately, however, the transformed equations will provide a very good practical approximation to the flow in a finite-radius reactor over a large fraction of the disk (up to {approximately}90% of the disk radius) when the reactor operating parameters are properly chosen, i.e, high rotation rates. In the limit of zero rotation rate, the rotating disk flow reduces to a stagnation-point flow, for which a similar separation-of-variables transformation is also available. Such flow configurations ( pedestal reactors'') also find use in CVD reactors. In this report we describe a model formulation and mathematical analysis of rotating-disk and stagnation-point CVD reactors. Then we apply the analysis to a compute code called SPIN and describe its implementation and use. 31 refs., 4 figs.

  7. The Statistical Evolution of Multiple Generations of Oxidation Products in the Photochemical Aging of Chemically Reduced Organic Aerosol

    SciTech Connect (OSTI)

    Wilson, Kevin R.; Smith, Jared D.; Kessler, Sean; Kroll, Jesse H.

    2011-10-03

    The heterogeneous reaction of hydroxyl radicals (OH) with squalane and bis(2-ethylhexyl) sebacate (BES) particles are used as model systems to examine how distributions of reactionproducts evolve during the oxidation of chemically reduced organic aerosol. A kinetic model of multigenerational chemistry, which is compared to previously measured (squalane) and new(BES) experimental data, reveals that it is the statistical mixtures of different generations of oxidation products that control the average particle mass and elemental composition during thereaction. The model suggests that more highly oxidized reaction products, although initially formed with low probability, play a large role in the production of gas phase reaction products.In general, these results highlight the importance of considering atmospheric oxidation as a statistical process, further suggesting that the underlying distribution of molecules could playimportant roles in aerosol formation as well as in the evolution of key physicochemical properties such as volatility and hygroscopicity.

  8. Chemistry, phase formation, and catalytic activity of thin palladium-containing oxide films synthesized by plasma-assisted physical vapor deposition

    E-Print Network [OSTI]

    Anders, Andre

    2011-01-01

    catalytic activity of thin palladium-containing oxide filmscatalytic activity of thin palladium- containing oxide filmsfilms incorporating palladium were studied using scanning

  9. Metal Oxide Semiconductor Gas Sensors and Neural Networks

    E-Print Network [OSTI]

    Siegel, Mel

    Olfaction Metal Oxide Semiconductor Gas Sensors and Neural Networks M. W. Siegel Carnegie Mellon around a chemical plant, sniffing as it goes for gas leaks (or the vapors of liquid leaks), navigating perhaps directed to the offending pipe fissure or open valve by acoustic homing toward the source

  10. Reductive Dehalogenation of Trichloroethene Vapors in an

    E-Print Network [OSTI]

    to treat trichloroethene (TCE) from waste gases generated by soil vapor extraction or dual-phase extraction and groundwater include soil vapor extraction (SVE) in combination with air sparging and dual-phase extraction methods such as incineration, catalytic oxidation, and adsorption onto activated carbon are currently

  11. Liquidus temperature and chemical durability of selected glasses to immobilize rare earth oxides waste

    SciTech Connect (OSTI)

    Mohd Fadzil, Syazwani Binti; Hrma, Pavel R.; Schweiger, Michael J.; Riley, Brian J.

    2015-06-30

    Pyroprocessing is a reprocessing method for managing and reusing used nuclear fuel (UNF) by dissolving it in an electrorefiner with a molten alkali or alkaline earth chloride salt mixture while avoiding wet reprocessing. Pyroprocessing UNF with a LiCl-KCl eutectic salt releases the fission products from the fuel and generates a variety of metallic and salt-based species, including rare earth (RE) chlorides. If the RE-chlorides are converted to oxides, borosilicate glass is a prime candidate for their immobilization because of its durability and ability to dissolve almost any RE waste component into the matrix at high loadings. Crystallization that occurs in waste glasses as the waste loading increases may complicate glass processing and affect the product quality. This work compares three types of borosilicate glasses in terms of liquidus temperature (TL): the International Simple Glass designed by the International Working Group, sodium borosilicate glass developed by Korea Hydro and Nuclear Power, and the lanthanide aluminoborosilicate (LABS) glass established in the United States. The LABS glass allows the highest waste loadings (over 50 mass% RE2O3) while possessing an acceptable chemical durability.

  12. Fluorine compounds for doping conductive oxide thin films

    DOE Patents [OSTI]

    Gessert, Tim; Li, Xiaonan; Barnes, Teresa M; Torres, Jr., Robert; Wyse, Carrie L

    2013-04-23

    Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

  13. Chemical and Radiochemical Composition of Thermally Stabilized Plutonium Oxide from the Plutonium Finishing Plant Considered as Alternate Feedstock for the Mixed Oxide Fuel Fabrication Facility

    SciTech Connect (OSTI)

    Tingey, Joel M.; Jones, Susan A.

    2005-07-01

    Eighteen plutonium oxide samples originating from the Plutonium Finishing Plant (PFP) on the Hanford Site were analyzed to provide additional data on the suitability of PFP thermally stabilized plutonium oxides and Rocky Flats oxides as alternate feedstock to the Mixed Oxide Fuel Fabrication Facility (MFFF). Radiochemical and chemical analyses were performed on fusions, acid leaches, and water leaches of these 18 samples. The results from these destructive analyses were compared with nondestructive analyses (NDA) performed at PFP and the acceptance criteria for the alternate feedstock. The plutonium oxide materials considered as alternate feedstock at Hanford originated from several different sources including Rocky Flats oxide, scrap from the Remote Mechanical C-Line (RMC) and the Plutonium Reclamation Facility (PRF), and materials from other plutonium conversion processes at Hanford. These materials were received at PFP as metals, oxides, and solutions. All of the material considered as alternate feedstock was converted to PuO2 and thermally stabilized by heating the PuO2 powder at 950 C in an oxidizing environment. The two samples from solutions were converted to PuO2 by precipitation with Mg(OH)2. The 18 plutonium oxide samples were grouped into four categories based on their origin. The Rocky Flats oxide was divided into two categories, low- and high-chloride Rocky Flats oxides. The other two categories were PRF/RMC scrap oxides, which included scrap from both process lines and oxides produced from solutions. The two solution samples came from samples that were being tested at Pacific Northwest National Laboratory because all of the plutonium oxide from solutions at PFP had already been processed and placed in 3013 containers. These samples originated at the PFP and are from plutonium nitrate product and double-pass filtrate solutions after they had been thermally stabilized. The other 16 samples originated from thermal stabilization batches before canning at PFP. Samples varied in appearance depending on the original source of material. Rocky Flats items were mostly dark olive green with clumps that crushed easily with a mortar and pestle. PRF/RMC items showed more variability. These items were mostly rust colored. One sample contained white particles that were difficult to crush, and another sample was a dark grey with a mixture of fines and large, hard fragments. The appearance and feel of the fragments indicated they might be an alloy. The color of the solution samples was indicative of the impurities in the sample. The double-pass filtrate solution was a brown color indicative of the iron impurities in the sample. The other solution sample was light gray in color. Radiochemical analyses, including thermal ionization mass spectrometry (TIMS), alpha and gamma energy analysis (AEA and GEA), and kinetic phosphorescence analysis (KPA), indicate that these materials are all weapons-grade plutonium with consistent plutonium isotopics. A small amount of uranium (<0.14 wt%) is also present in these samples. The isotopic composition of the uranium varied widely but was consistent among each category of material. The primary water-soluble anions in these samples were Cl-, NO3-, SO42-, and PO43-. The only major anion observed in the Rocky Flats materials was Cl-, but the PRF/RMC samples had significant quantities of all of the primary anions observed. Prompt gamma measurements provide a representative analysis of the Cl- concentration in the bulk material. The primary anions observed in the solution samples were NO3-, and PO43-. The concentration of these anions did not exceed the mixed oxide (MOX) specification limits. Cations that exceeded the MOX specification limits included Cr, Fe, Ni, Al, Cu, and Si. All of the samples exceeded at least the 75% specification limit in one element.

  14. Vapor deposition of thin films

    DOE Patents [OSTI]

    Smith, David C. (Los Alamos, NM); Pattillo, Stevan G. (Los Alamos, NM); Laia, Jr., Joseph R. (Los Alamos, NM); Sattelberger, Alfred P. (Los Alamos, NM)

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  15. Vapor deposition of thin films

    SciTech Connect (OSTI)

    Smith, D.C.; Pattillo, S.G.; Laia, J.R. Jr.; Sattelberger, A.P.

    1990-10-05

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl){sub 3}, iridium(allyl){sub 3}, molybdenum(allyl){sub 4}, tungsten(allyl){sub 4}, rhenium (allyl){sub 4}, platinum(allyl){sub 2}, or palladium(allyl){sub 2} are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  16. Short communication Chemically abrupt interface between Ce oxide and Fe films

    E-Print Network [OSTI]

    Kim, Sehun

    of an Fe film followed by deposition of Ce metal. Once a Ce oxide layer is formed on top of Fe, it acts.90.+f; 74.25.jb; 79.60 Ài; 79.60.Dp Keywords: MTJ; Ce oxide layer; XPS Magnetic tunneling junctions (MTJ of the oxide layer, resulting in decreased tunneling magneto- resistance and fluctuations in the local

  17. Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si

    SciTech Connect (OSTI)

    Halder, Nripendra N.; Biswas, Pranab; Banerji, P.; Dhabal Das, Tushar; Das, Sanat Kr.; Chattopadhyay, S.; Biswas, D.

    2014-01-28

    A detailed analysis of photoluminescence (PL) from InP quantum dots (QDs) grown on Si has been carried out to understand the effect of substrate/host material in the luminescence and carrier escape process from the surface quantum dots. Such studies are required for the development of monolithically integrated next generation III-V QD based optoelectronics with fully developed Si microelectronics. The samples were grown by atmospheric pressure metalorganic chemical vapor deposition technique, and the PL measurements were made in the temperature range 10–80?K. The distribution of the dot diameter as well as the dot height has been investigated from atomic force microscopy. The origin of the photoluminescence has been explained theoretically. The band alignment of InP/Si heterostructure has been determined, and it is found be type II in nature. The positions of the conduction band minimum of Si and the 1st excited state in the conduction band of InP QDs have been estimated to understand the carrier escape phenomenon. A blue shift with a temperature co-efficient of 0.19?meV/K of the PL emission peak has been found as a result of competitive effect of different physical processes like quantum confinement, strain, and surface states. The corresponding effect of blue shift by quantum confinement and strain as well as the red shift by the surface states in the PL peaks has been studied. The origin of the luminescence in this heterojunction is found to be due to the recombination of free excitons, bound excitons, and a transition from the 1st electron excited state in the conduction band (e{sub 1}) to the heavy hole band (hh{sub 1}). Monotonic decrease in the PL intensity due to increase of thermally escaped carriers with temperature has been observed. The change in barrier height by the photogenerated electric-field enhanced the capture of the carriers by the surface states rather than their accumulation in the QD excited state. From an analysis of the dependence of the PL intensity, peak position, and line width with temperature and excitation source, the existence of free and bound excitonic recombination together with e{sub 1} ? hh{sub 1} transitions in the QDs is established.

  18. Effect of Water Vapor on the 1100oC Oxidation Behavior of Plasma-Sprayed TBCs with HVOF NiCoCrAlX Bond Coatings

    SciTech Connect (OSTI)

    Haynes, James A; Unocic, Kinga A; Pint, Bruce A

    2013-01-01

    With the goal of investigating the reported detrimental effect of water vapor on thermal barrier coating (TBC) performance, furnace cycle experiments were conducted in dry O2 and air with 10 and 50% water vapor at 1100 C. The TBC systems evaluated were air plasma-sprayed (APS), yttria-stabilized zirconia (YSZ) top coatings with high velocity oxy fuel (HVOF)-deposited NiCoCrAlY or NiCoCrAlYHfSi bond coating. Average TBC lifetime was reduced by ~30% in air with 10% water vapor compared to cycling in dry O2, using 1h cycle durations. Superalloy substrates with Y and La additions also were investigated but showed no statistical change in the average TBC lifetime compared to the base CMSX4 superalloy. In all cases, the bond coating with Hf and Si additions increased YSZ lifetime by 20% or more. Experiments that increased water vapor to 50% showed no further decrease in TBC lifetime. Increasing the cycle frequency to 100h resulted in a large increase in TBC lifetime, especially for the NiCoCrAlYHfSi bond coatings. Co-doping the NiCoCrAl bond coat with Y and Hf was beneficial to TBC lifetime, but did not mitigate the detrimental impact of water vapor.

  19. Chemistry, phase formation, and catalytic activity of thin palladium-containing oxide films synthesized by plasma-assisted physical vapor deposition

    SciTech Connect (OSTI)

    Anders, Andre

    2010-11-26

    The chemistry, microstructure, and catalytic activity of thin films incorporating palladium were studied using scanning and transmission electron microscopies, X-ray diffraction, spectrophotometry, 4-point probe and catalytic tests. The films were synthesized using pulsed filtered cathodic arc and magnetron sputter deposition, i.e. techniques far from thermodynamic equilibrium. Catalytic particles were formed by thermally cycling thin films of the Pd-Pt-O system. The evolution and phase formation in such films as a function of temperature were discussed in terms of the stability of PdO and PtO2 in air. The catalytic efficiency was found to be strongly affected by the chemical composition, with oxidized palladium definitely playing a major role in the combustion of methane. Reactive sputter deposition of thin films in the Pd-Zr-Y-O system allowed us forming microstructures ranging from nanocrystalline zirconia to palladium nanoparticles embedded in a (Zr,Y)4Pd2O matrix. The sequence of phase formation is put in relation to simple thermodynamic considerations.

  20. Portable vapor diffusion coefficient meter

    DOE Patents [OSTI]

    Ho, Clifford K. (Albuquerque, NM)

    2007-06-12

    An apparatus for measuring the effective vapor diffusion coefficient of a test vapor diffusing through a sample of porous media contained within a test chamber. A chemical sensor measures the time-varying concentration of vapor that has diffused a known distance through the porous media. A data processor contained within the apparatus compares the measured sensor data with analytical predictions of the response curve based on the transient diffusion equation using Fick's Law, iterating on the choice of an effective vapor diffusion coefficient until the difference between the predicted and measured curves is minimized. Optionally, a purge fluid can forced through the porous media, permitting the apparatus to also measure a gas-phase permeability. The apparatus can be made lightweight, self-powered, and portable for use in the field.

  1. New manganese catalyst for light alkane oxidation

    DOE Patents [OSTI]

    Durante, Vincent A. (West Chester, PA); Lyons, James E. (Wallingford, PA); Walker, Darrell W. (Visalia, CA); Marcus, Bonita K. (Radnor, PA)

    1994-01-01

    Aluminophosphates containing manganese in the structural framework are employed for the oxidation of alkanes, for example the vapor phase oxidation of methane to methanol.

  2. Regenerable MgO promoted metal oxide oxygen carriers for chemical looping combustion

    DOE Patents [OSTI]

    Siriwardane, Ranjani V.; Miller, Duane D.

    2014-08-19

    The disclosure provides an oxygen carrier comprised of a plurality of metal oxide particles in contact with a plurality of MgO promoter particles. The MgO promoter particles increase the reaction rate and oxygen utilization of the metal oxide when contacting with a gaseous hydrocarbon at a temperature greater than about 725.degree. C. The promoted oxide solid is generally comprised of less than about 25 wt. % MgO, and may be prepared by physical mixing, incipient wetness impregnation, or other methods known in the art. The oxygen carrier exhibits a crystalline structure of the metal oxide and a crystalline structure of MgO under XRD crystallography, and retains these crystalline structures over subsequent redox cycles. In an embodiment, the metal oxide is Fe.sub.2O.sub.3, and the gaseous hydrocarbon is comprised of methane.

  3. Micromechanical Resonators with Nanoporous Materials for Enhanced Vapor Sensing

    E-Print Network [OSTI]

    Hwang, Yong Ha

    2012-01-01

    organic compounds," Analytical Chemistry, vol. 74, pp. 3084-Gas Sensor Array," Analytical Chemistry, vol. 81, pp. 595-Chemical Vapors," Analytical Chemistry, vol. 83, pp. 3448-

  4. Photocatalytic and chemical oxidation of organic compounds in supercritical carbon dioxide. Progress report for FY97

    SciTech Connect (OSTI)

    Blake, D.M.; Bryant, D.L.; Reinsch, V.

    1997-09-30

    'The background for the project is briefly reviewed and the work done during the nine months since funding was received is documented. Work began in January, 1997. A post doctoral fellow joined the team in April. The major activities completed this fiscal year were: staffing the project, design of the experimental system, procurement of components, assembly of the system. preparation of the Safe Operating Procedure and ES and H compliance, pressure testing, establishing data collection and storage methodology, and catalyst preparation. Objective The objective of the project is to develop new chemistry for the removal of organic contaminants from supercritical carbon dioxide. This has application in processes used for continuous cleaning and extraction of parts and waste materials. A secondary objective is to increase the fundamental understanding of photocatalytic chemistry. Cleaning and extraction using supercritical carbon dioxide (scCO{sub 2}) can be applied to the solution of a wide range of environmental and pollution prevention problems in the DOE complex. Work is being done that explores scCO{sub 2} in applications ranging from cleaning contaminated soil to cleaning components constructed from plutonium. The rationale for use of scCO{sub 2} are based on the benign nature, availability and low cost, attractive solvent properties, and energy efficient separation of the extracted solute from the solvent by moderate temperature or pressure changes. To date, R and D has focussed on the methods and applications of the extraction steps of the process. Little has been done that addresses methods to polish the scCO{sub 2} for recycle in the cleaning or extraction operations. In many applications it will be desirable to reduce the level of contamination from that which would occur at steady state operation of a process. This proposal addresses chemistry to achieve that. This would be an alternative to removing a fraction of the contaminated scCO{sub 2} for disposal and using makeup scCO{sub 2}. A chemical polishing operation can reduce the release of CO{sub 2} from the process. It can also reduce the consumption of reagents that may be used in the process to enhance extraction and cleaning. A polishing operation will also reduce or avoid formation of an additional waste stream. Photocatalytic and other photochemical oxidation chemistry have not been investigated in scCO{sub 2}. The large base of information for these reactions in water, organic solvents, or air suggest that the chemistry will work in carbon dioxide. There are compelling reasons to believe that the properties of scCO{sub 2} should increase the performance of photocatalytic chemistry over that found in more conventional fluid phases.'

  5. Effect of oxidant concentration, exposure time, and seed particles on secondary organic aerosol chemical composition and yield

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lambe, A. T.; Chhabra, P. S.; Onasch, T. B.; Brune, W. H.; Hunter, J. F.; Kroll, J. H.; Cummings, M. J.; Brogan, J. F.; Parmar, Y.; Worsnop, D. R.; et al

    2015-03-18

    We performed a systematic intercomparison study of the chemistry and yields of secondary organic aerosol (SOA) generated from OH oxidation of a common set of gas-phase precursors in a Potential Aerosol Mass (PAM) continuous flow reactor and several environmental chambers. In the flow reactor, SOA precursors were oxidized using OH concentrations ranging from 2.0 × 108 to 2.2 × 1010 molec cm-3 over exposure times of 100 s. In the environmental chambers, precursors were oxidized using OH concentrations ranging from 2 × 106 to 2 × 107 molec cm-3 over exposure times of several hours. The OH concentration in themore »chamber experiments is close to that found in the atmosphere, but the integrated OH exposure in the flow reactor can simulate atmospheric exposure times of multiple days compared to chamber exposure times of only a day or so. In most cases, for a specific SOA type the most-oxidized chamber SOA and the least-oxidized flow reactor SOA have similar mass spectra, oxygen-to-carbon and hydrogen-to-carbon ratios, and carbon oxidation states at integrated OH exposures between approximately 1 × 1011 and 2 × 1011 molec cm-3 s, or about 1–2 days of equivalent atmospheric oxidation. This observation suggests that in the range of available OH exposure overlap for the flow reactor and chambers, SOA elemental composition as measured by an aerosol mass spectrometer is similar whether the precursor is exposed to low OH concentrations over long exposure times or high OH concentrations over short exposure times. This similarity in turn suggests that both in the flow reactor and in chambers, SOA chemical composition at low OH exposure is governed primarily by gas-phase OH oxidation of the precursors rather than heterogeneous oxidation of the condensed particles. In general, SOA yields measured in the flow reactor are lower than measured in chambers for the range of equivalent OH exposures that can be measured in both the flow reactor and chambers. The influence of sulfate seed particles on isoprene SOA yield measurements was examined in the flow reactor. The studies show that seed particles increase the yield of SOA produced in flow reactors by a factor of 3 to 5 and may also account in part for higher SOA yields obtained in the chambers, where seed particles are routinely used.« less

  6. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology

    SciTech Connect (OSTI)

    Dargis, Rytis, E-mail: dargis@translucentinc.com; Clark, Andrew; Erdem Arkun, Fevzi [Translucent, Inc., 952 Commercial St., Palo Alto, California 94303 (United States); Grinys, Tomas; Tomasiunas, Rolandas [Institute of Applied Research, Vilnius University, Sauletekio al. 10, LT-10223 Vilnius (Lithuania); O'Hara, Andy; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, 2515 Speedway, C1600, Austin, Texas 78712 (United States)

    2014-07-01

    Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed.

  7. Enhanced electrical, optical and chemical properties of graphene oxide through a novel phase transformation

    E-Print Network [OSTI]

    Kumar, Priyank Vijaya

    2015-01-01

    Graphene oxide (GO) is a versatile, solution-processable candidate material for next-generation, large-area, ultrathin electronics, optoelectronics, energy conversion and storage technologies. GO is an atom-thick sheet of ...

  8. Quantum Chemical Study of Arsenic (III, V) Adsorption on Mn-Oxides

    E-Print Network [OSTI]

    Sparks, Donald L.

    sites under simulated acidic pH conditions. Therefore, we propose that As(V) adsorption inhibits As(III) oxidation by blocking adsorption sites. Under simulated acidic pH conditions, Mn(IV) sites exhibited

  9. Long-Term Oxidation of Candidate Cast Iron and Advanced Austenitic Stainless Steel Exhaust System Alloys from 650-800 C in Air with Water Vapor

    SciTech Connect (OSTI)

    Brady, Michael P [ORNL; Muralidharan, Govindarajan [ORNL; Leonard, Donovan N [ORNL; Haynes, James A [ORNL

    2014-01-01

    The oxidation behavior of SiMo cast iron, Ni-resist D5S cast iron, cast chromia-forming austenitic stainless steels of varying Cr/Ni content based on CF8C plus, HK, and HP, and a developmental cast alumina-forming austenitic (AFA) stainless steel of interest for diesel exhaust system components were studied for up to 5000 h at 650-800 C in air with 10% H2O. At 650 C, the Ni-resist D5S exhibited moderately better oxidation resistance than did the SiMo cast iron. However, the D5S suffered from oxide scale spallation issues at 700 C and higher, whereas the oxide scales formed on SiMo cast iron remained adherent from 700-800 C despite oxide scales hundreds of microns thick. The oxidation of the SiMo cast iron exhibited unusual temperature dependence, with periods of slower oxidation kinetics at 750-800 C compared to 650-700 C due to continuous silica-rich scale formation at the higher temperatures. The oxidation of the cast chromia-forming austenitics trended with the level of Cr and Ni additions, with small mass losses consistent with Cr oxy-hydroxide volatilization processes for the higher 25Cr/25-35Ni HK and HP type alloys, and transition to rapid Fe-base oxide formation and scale spallation in the lower 19Cr/12Ni CF8C plus type alloy. In contrast, small positive mass changes consistent with protective alumina scale formation were observed for the cast AFA alloy under all conditions studied. Implications of these findings for diesel exhaust system components are discussed.

  10. Dresden Unit 2 hydrogen water chemistry: Chemical surveillance, oxide-film characterization, and recontamination during Cycle 10: Final report

    SciTech Connect (OSTI)

    Ruiz, C.P.; Peterson, J.P.; Robinson, R.N.; Sundberg, L.L.

    1989-03-01

    This document provides an Executive Summary of work performed under Project RP1930-7, BWR Hydrogen Water Chemistry - Chemical Surveillance. It describes the work performed to monitor chemical and radiological performance at Commonwealth Edison's Dresden Nuclear Power Station Unit 2 during Cycle 10, its second full fuel cycle on Hydrogen Water Chemistry. It includes the results of water chemistry measurements, shutdown gamma scan/dose rate measurements, and the results of stainless steel oxide film characterization. This experience at Dresden-2 continues to demonstrate that a plant can operate on Hydrogen Water Chemistry with only minor impact on plant parameters, compared with the beneficial effect on intergranular stress corrosion cracking (IGSCC) mitigation of sensitized stainless steel components. 4 figs., 2 tabs.

  11. Models of the formation of oxide phases in nanostructured materials based on lead chalcogenides subjected to treatment in oxygen and iodine vapors

    SciTech Connect (OSTI)

    Maraeva, E. V., E-mail: jenvmar@mail.ru; Moshnikov, V. A.; Tairov, Yu. M. [St. Petersburg State Electrotechnical University 'LETI' (Russian Federation)] [St. Petersburg State Electrotechnical University 'LETI' (Russian Federation)

    2013-10-15

    Model concepts concerning control over the formation of oxide layers during the course of oxidation are developed on the basis of experimental results of studies of systematic features of the formation of nanostructured layers after diffusion annealing. Data on a variation in the composition of oxide phases as the extent of deviation from stoichiometry is changed in the initial lead chalcogenide are presented. Model concepts related to the possibility of varying the thickness of the coating oxide phases using annealing in an oxygen-containing medium are developed. It is shown that annealing in an iodine atmosphere ensures the effective penetration of oxygen into the grains, which is necessary for an increase in the photoluminescence efficiency.

  12. Standard test methods for chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets

    E-Print Network [OSTI]

    American Society for Testing and Materials. Philadelphia

    1994-01-01

    1.1 These test methods cover procedures for the chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets to determine compliance with specifications. 1.2 The analytical procedures appear in the following order: Sections Boron by Titrimetry 7 to 13 Separation of Boron for Mass Spectrometry 14 to 19 Isotopic Composition by Mass Spectrometry 20 to 23 Separation of Halides by Pyrohydrolysis 24 to 27 Fluoride by Ion-Selective Electrode 28 to 30 Chloride, Bromide, and Iodide by Amperometric Microtitrimetry 31 to 33 Trace Elements by Emission Spectroscopy 34 to 46 1.3 The values stated in SI units are to be regarded as the standard. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. (F...

  13. Methane and methanol oxidation in supercritical water: Chemical kinetics and hydrothermal flame studies

    SciTech Connect (OSTI)

    Steeper, R.R.

    1996-01-01

    Supercritical water oxidation (SCWO) is an emerging technology for the treatment of wastes in the presence of a large concentration of water at conditions above water`s thermodynamic critical point. A high-pressure, optically accessible reaction cell was constructed to investigate the oxidation of methane and methanol in this environment. Experiments were conducted to examine both flame and non-flame oxidation regimes. Optical access enabled the use of normal and shadowgraphy video systems for visualization, and Raman spectroscopy for in situ measurement of species concentrations. Flame experiments were performed by steadily injecting pure oxygen into supercritical mixtures of water and methane or methanol at 270 bar and at temperatures from 390 to 510{degrees}C. The experiments mapped conditions leading to the spontaneous ignition of diffusion flames in supercritical water. Above 470{degrees}C, flames spontaneously ignite in mixtures containing only 6 mole% methane or methanol. This data is relevant to the design and operation of commercial SCWO processes that may be susceptible to inadvertent flame formation. Non-flame oxidation kinetics experiments measured rates of methane oxidation in supercritical water at 270 bar and at temperatures from 390 to 442{degrees}C. The initial methane concentration was nominally 0.15 gmol/L, a level representative of commercial SCWO processes. The observed methane concentration histories were fit to a one-step reaction rate expression indicating a reaction order close to two for methane and zero for oxygen. Experiments were also conducted with varying water concentrations (0 to 8 gmol/L) while temperature and initial reactant concentrations were held constant. The rate of methane oxidation rises steadily with water concentration up to about 5 gmol/L and then abruptly falls off at higher concentrations.

  14. A study of the tropospheric oxidation of volatile organic compounds using chemical ionization mass spectrometry

    E-Print Network [OSTI]

    Broekhuizen, Keith Edward, 1974-

    2002-01-01

    The mechanisms and kinetics of reactions important to the troposphere have been investigated using a high pressure, turbulent, discharge-flow technique coupled to a chemical ionization mass spectrometer. The ability to ...

  15. The aging of organic aerosol in the atmosphere : chemical transformations by heterogeneous oxidation

    E-Print Network [OSTI]

    Kessler, Sean Herbert

    2013-01-01

    The immense chemical complexity of atmospheric organic particulate matter ("aerosol") has left the general field of condensed-phase atmospheric organic chemistry relatively under-developed when compared with either gas-phase ...

  16. Chemical Sinks of Organic Aerosol: Kinetics and Products of the Heterogeneous Oxidation of Erythritol and Levoglucosan

    E-Print Network [OSTI]

    Kessler, Sean Herbert

    The heterogeneous oxidation of pure erythritol (C[subscript 4]H[subscript 10]O[subscript 4]) and levoglucosan (C[subscript 6]H[subscript 10]O[subscript 5]) particles was studied in order to evaluate the effects of atmospheric ...

  17. Reversal of the Oxidation Cycle in Saccharomyces cerevisiae for Production of Fuels and Chemicals

    E-Print Network [OSTI]

    Zhao, Huimin

    to the synthesis of n-butanol, medium-chain fatty acids (MCFAs), and medium-chain fatty acid ethyl esters (MCFAEEs to produce advanced biofuels, such as n-butanol, long-chain alcohols, fatty acid ethyl esters (FAEEs in S. cerevisiae. KEYWORDS: -oxidation, synthetic biology, advanced biofuels, fatty acid, yeast

  18. Stratospheric sulfur oxidation kinetics

    SciTech Connect (OSTI)

    Jayne, J.T.; Worsnop, D.R.; Kolb, C.E. [Aerodyne Research, Inc., Billerica, MA (United States)] [and others

    1995-12-31

    Oxidation of SO2 to H2SO4 in the atmosphere is believed to involve the reaction of SO3 with water. It is commonly assumed that this is an important step leading to homogeneous nucleation of H2SO4 aerosol particles. Heterogeneous chemistry on sulfuric acid aerosols regulate much of the ozone photochemistry in the lower stratosphere and are also believed to have significant effect on the climate. Understanding aerosol loading requires a detailed knowledge of the stratospheric sulfur budget, including its oxidation kinetics. Here we present results of a laboratory project studying a key step in the oxidation process, the homogeneous reaction between SO3 and H2O vapor. Kinetic measurements are performed in a high-pressure turbulent fast-flow reactor (fabricated at MIT) which minimizes heterogeneous loss of SO3 on reactorwalls. The rate of decay of SO3 and the appearance of H2SO4 is monitored in the presence of excess water vapor. Gas phase reactants and products are detected via an atmospheric pressure chemical ionization mass spectrometer which is coupled to the exit of the flow reactor. Sulfuric acid nucleation studies can also be performed using the turbulent flow reactor. Initial measurements using a particle detector (based on Mie scattering) showed that aerosol formation and particle size distribution are controlled by varying the SO3/H2O gas ratio and the reactor temperature. Results for the reaction SO3J+ H2O show a second order dependence in water vapor density and a strong negative temperature dependence. The results, measured in the range -30C to +95C, imply that an SO3.H2O adduct and/or a water dimer species is likely involved in the reaction mechanism. Results of recent theoretical calculations on the SO3 + H2O system also support the finding that two water molecules are involved. Implications for the gas phase production of sulfuric acid in the atmosphere will be discussed.

  19. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    SciTech Connect (OSTI)

    Sallis, S.; Williams, D. S.; Butler, K. T.; Walsh, A.; Quackenbush, N. F.; Junda, M.; Podraza, N. J.; Fischer, D. A.; Woicik, J. C.; White, B. E.; Piper, L. F. J.

    2014-06-09

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  20. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

    1998-05-19

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

  1. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

    1998-01-01

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  2. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOE Patents [OSTI]

    Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

    1999-01-01

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  3. Chemical bath method to grow precipitated nanorods of iridium oxide on alumina membranes

    E-Print Network [OSTI]

    Chiao, Jung-Chih

    and chemical stability, such as ZnO, OsO2, RuO2, TiO2 and IrO2 have been used as materials for durableO2 on high-density carbon nanotubes (CNTs) to form IrO2/CNT nanocomposites. Although the growth

  4. LNG fire and vapor control system technologies

    SciTech Connect (OSTI)

    Konzek, G.J.; Yasutake, K.M.; Franklin, A.L.

    1982-06-01

    This report provides a review of fire and vapor control practices used in the liquefied natural gas (LNG) industry. Specific objectives of this effort were to summarize the state-of-the-art of LNG fire and vapor control; define representative LNG facilities and their associated fire and vapor control systems; and develop an approach for a quantitative effectiveness evaluation of LNG fire and vapor control systems. In this report a brief summary of LNG physical properties is given. This is followed by a discussion of basic fire and vapor control design philosophy and detailed reviews of fire and vapor control practices. The operating characteristics and typical applications and application limitations of leak detectors, fire detectors, dikes, coatings, closed circuit television, communication systems, dry chemicals, water, high expansion foam, carbon dioxide and halogenated hydrocarbons are described. Summary descriptions of a representative LNG peakshaving facility and import terminal are included in this report together with typical fire and vapor control systems and their locations in these types of facilities. This state-of-the-art review identifies large differences in the application of fire and vapor control systems throughout the LNG industry.

  5. Chemical changes in carbon Nanotube-Nickel/Nickel Oxide Core/Shell nanoparticle heterostructures treated at high temperatures

    SciTech Connect (OSTI)

    Chopra, Nitin; McWhinney, Hylton G.; Shi Wenwu

    2011-06-15

    Heterostructures composed of carbon nanotube (CNT) coated with Ni/NiO core/shell nanoparticles (denoted as CNC heterostructures) were synthesized in a wet-chemistry and single-step synthesis route involving direct nucleation of nanoparticles on CNT surface. Two different aspects of CNC heterostructures were studied here. First, it was observed that the nanoparticle coatings were more uniform on the as-produced and non-purified CNTs compared to purified (or acid treated) CNTs. These heterostructures were characterized using electron microscopy, Raman spectroscopy, and energy dispersive spectroscopy. Second, thermal stability of CNC heterostructures was studied by annealing them in N{sub 2}-rich (O{sub 2}-lean) environment between 125 and 750 deg. C for 1 h. A detailed X-ray photoelectron spectroscopy and Raman spectroscopy analysis was performed to evaluate the effects of annealing temperatures on chemical composition, phases, and stability of the heterostructures. It was observed that the CNTs present in the heterostructures completely decomposed and core Ni nanoparticle oxidized significantly between 600 and 750 deg. C. - Research Highlights: {yields} Heterostructures composed of CNTs coated with Ni/NiO core/shell nanoparticles. {yields} Poor nanoparticle coverage on purified CNT surface compared to non-purified CNTs. {yields} CNTs in heterostructures decompose between 600 and 750 deg. C in N{sub 2}-rich atmosphere. {yields} Metallic species in heterostructures were oxidized at higher temperatures.

  6. Electronic Structure, Oxidation State of Sn, and Chemical Stability of Photovoltaic Perovskite Variant Cs2SnI6

    E-Print Network [OSTI]

    Xiao, Zewen; Zhang, Xiao; Zhou, Yuanyuan; Hosono, Hideo; Kamiya, Toshio

    2015-01-01

    Cs2SnI6, a variant of perovskite CsSnI3, is expected for a photovoltaic material. Based on a simple ionic model, it is expected that Cs2SnI6 is composed of Cs+, I-, and Sn4+ ions and that the band gap is primarily made of occupied I- 5p6 valence band maximum (VBM) and unoccupied Sn4+ 5s conduction band minimum (CBM) similar to SnO2. In this work, we performed density functional theory (DFT) calculations and revealed that the real charge state of the Sn ion in this compound is +2 similar to CsSnI3. This is due to strong covalent nature between the I ion and the Sn ion, the VBM consists of I 5p - I 5p antibonding states, and the CBM of I 5p - Sn 5s antibonding states. The +2 oxidation state of Sn is realized by the apparent charge state of I-2/3, because the I 5p - Sn 5s antibonding states form the unoccupied CBM and apparently 1/18 of the I 5p orbitals are unoccupied. These results are further supported by comparing chemical bonding analyses with those of related compounds. The chemical stability of the Cs2SnI...

  7. Compliant alkali silicate sealing glass for solid oxide fuel cell applications: thermal cycle stability and chemical compatibility

    SciTech Connect (OSTI)

    Chou, Y. S.; Thomsen, Edwin C.; Williams, Riley T.; Choi, Jung-Pyung; Canfield, Nathan L.; Bonnett, Jeff F.; Stevenson, Jeffry W.; Shyam, Amit; Lara-Curzio, E.

    2011-03-01

    An alkali silicate glass (SCN-1) is currently being evaluated as a candidate sealing glass for solid oxide fuel (SOFC) applications. The glass containing ~17 mole% alkalis (K2O and Na2O) remains vitreous and compliant during SOFC operation, unlike conventional SOFC sealing glasses, which experience substantial devitrification after the sealing process. The non-crystallizing compliant sealing glass has lower glass transition and softening temperatures since the microstructure remains glassy without significant crystallite formation, and hence can relieve or reduce residual stresses and also has the potential for crack healing. Sealing approaches based on compliant glass will also need to satisfy all the mechanical, thermal, chemical, physical, and electrical requirements for SOFC applications, not only in bulk properties but also at sealing interfaces. In this first of a series of papers we will report the thermal cycle stability of the glass when sealed between two SOFC components, i.e., a NiO/YSZ anode supported YSZ bilayer and a coated ferritic stainless steel interconnect material. High temperature leak rates were monitored versus thermal cycles between 700-850oC using back pressures ranging from 0.2 psi to 1.0 psi. Isothermal stability was also evaluated in a dual environment consisting of flowing dilute H2 fuel versus ambient air. In addition, chemical compatibility at the alumina and YSZ interfaces was examined with scanning electron microscopy and energy dispersive spectroscopy. The results shed new light on the topic of SOFC glass seal development.

  8. Characterization of Chemical Speciation in Ultra Thin Uranium Oxide Films by Neutron Reflectometry

    SciTech Connect (OSTI)

    Wang, Peng

    2012-06-20

    Motivation for this project is due to more than 17 kg of HEU and 400 g of Pu have been interdicted through an international effort to control nuclear smuggling. Nuclear forensics - Detection and analysis of nuclear materials recovered from either the capture of unused materials or from the radioactive debris following a nuclear explosion or activities, which can contribute significantly for national security. Develop new nuclear forensic methods can be applied to: (a) Environmental swipes, (b) Small particulates, and (c) Thin films. Conclusions of the project are: (1) A unique approach: Neutron Reflectometry + Surface Enhanced Raman Spectroscopy; and (2) Detection of chemical speciation with {angstrom}-level resolution.

  9. Lecture Session (LeS): E.1 In-situ chemical oxidation-1 ENA OF HETEROCYCLIC HYDROCARBONS USING HYDROGEN PEROXIDE AND

    E-Print Network [OSTI]

    Cirpka, Olaf Arie

    , In situ Biological Degradation, Heterocyclic Hydrocarbons, PAH, Field Trial, Groundwater Circulation WellsLecture Session (LeS): E.1 In-situ chemical oxidation-1 ENA OF HETEROCYCLIC HYDROCARBONS USING (GCW), Hydrogen Peroxide Introduction Heterocyclic hydrocarbons (NSO-HET) containing nitrogen (N

  10. Methyl Formate Oxidation: Speciation Data, Laminar Burning Velocities, Ignition Delay Times and a Validated Chemical Kinetic Model

    SciTech Connect (OSTI)

    Dooley, S.; Burke, M. P.; Chaos, M.; Stein, Y.; Dryer, F. L.; Zhukov, V. P.; Finch, O.; Simmie, J. M.; Curran, H. J.

    2010-07-16

    The oxidation of methyl formate (CH{sub 3}OCHO) has been studied in three experimental environments over a range of applied combustion relevant conditions: 1. A variable-pressure flow reactor has been used to quantify reactant, major intermediate and product species as a function of residence time at 3 atm and 0.5% fuel concentration for oxygen/fuel stoichiometries of 0.5, 1.0, and 1.5 at 900 K, and for pyrolysis at 975 K. 2. Shock tube ignition delays have been determined for CH{sub 3}OCHO/O{sub 2}/Ar mixtures at pressures of ? 2.7, 5.4, and 9.2 atm and temperatures of 1275–1935 K for mixture compositions of 0.5% fuel (at equivalence ratios of 1.0, 2.0, and 0.5) and 2.5% fuel (at an equivalence ratio of 1.0). 3. Laminar burning velocities of outwardly propagating spherical CH{sub 3}OCHO/air flames have been determined for stoichiometries ranging from 0.8–1.6, at atmospheric pressure using a pressure-release-type high-pressure chamber. A detailed chemical kinetic model has been constructed, validated against, and used to interpret these experimental data. The kinetic model shows that methyl formate oxidation proceeds through concerted elimination reactions, principally forming methanol and carbon monoxide as well as through bimolecular hydrogen abstraction reactions. The relative importance of elimination versus abstraction was found to depend on the particular environment. In general, methyl formate is consumed exclusively through molecular decomposition in shock tube environments, while at flow reactor and freely propagating premixed flame conditions, there is significant competition between hydrogen abstraction and concerted elimination channels. It is suspected that in diffusion flame configurations the elimination channels contribute more significantly than in premixed environments.

  11. Unifying Chemical and Physical Principles for Oxide Superconductivity Based on an Anionic Charge Order Model

    SciTech Connect (OSTI)

    Oesterreicher, H.

    2001-05-01

    Subperoxidic O{sub 2}{sup 3-} charge ordering presents a satisfying basis for a quantitative, conceptually realistic, and unifying understanding of cuprate superconductors. The activity of O{sup -} manifests itself in a variety of ways including a universal T{sub c} scaling with O{sup -} per total O, or more generally, in the subperoxide radical concentration. Also, a characteristic crystal chemistry of O{sup -} placement is indicated. As an example, trends to preferential O{sup -} occupation of the apical sites are correlated with c axis and T{sub c} decreases providing a new crystallographic interpretation of the overdoping question. Generally, subperoxides can be created on overoxidation or through various modes of self doping through lattice pressure-related factors. Accordingly, the role of peranion formation is seen as a most general chemical principle for ameliorating stacking mismatch through electronic liquefaction under internal stress . Cases are discussed (e.g., YBa{sub 2}Cu{sub 3}O{sub 6.5}) where the tension on cooling can result in stratified self-doping steps. A variety of experiments indicating charge order properties, such as stripes and slow charge propagation, are interpreted on the anionic model. Subperoxidic pair formation and charge ordering energetics are discussed. Concepts are further generalized for other cases (e.g., carbides or nitrides) of anionic metallicity and superconductivity. Common aspects are mobile, paired charge orders of radicals coupled through bond polarizations.

  12. Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Jeffrey W. Elam,*, David A. Baker, Alex B. F. Martinson,, Michael J. Pellin, and

    E-Print Network [OSTI]

    Atomic Layer Deposition of Indium Tin Oxide Thin Films Using Nonhalogenated Precursors Jeffrey W: NoVember 8, 2007 This article describes a new atomic layer deposition (ALD) method for preparing,2 sol-gel methods,3 chemical vapor deposition,4 pulsed laser deposition,5 and atomic layer

  13. Method for producing metal oxide nanoparticles

    DOE Patents [OSTI]

    Phillips, Jonathan (Santa Fe, NM); Mendoza, Daniel (Santa Fe, NM); Chen, Chun-Ku (Albuquerque, NM)

    2008-04-15

    Method for producing metal oxide nanoparticles. The method includes generating an aerosol of solid metallic microparticles, generating plasma with a plasma hot zone at a temperature sufficiently high to vaporize the microparticles into metal vapor, and directing the aerosol into the hot zone of the plasma. The microparticles vaporize in the hot zone into metal vapor. The metal vapor is directed away from the hot zone and into the cooler plasma afterglow where it oxidizes, cools and condenses to form solid metal oxide nanoparticles.

  14. Water vapor distribution in protoplanetary disks

    SciTech Connect (OSTI)

    Du, Fujun; Bergin, Edwin A.

    2014-09-01

    Water vapor has been detected in protoplanetary disks. In this work, we model the distribution of water vapor in protoplanetary disks with a thermo-chemical code. For a set of parameterized disk models, we calculate the distribution of dust temperature and radiation field of the disk with a Monte Carlo method, and then solve the gas temperature distribution and chemical composition. The radiative transfer includes detailed treatment of scattering by atomic hydrogen and absorption by water of Ly? photons, since the Ly? line dominates the UV spectrum of accreting young stars. In a fiducial model, we find that warm water vapor with temperature around 300 K is mainly distributed in a small and well-confined region in the inner disk. The inner boundary of the warm water region is where the shielding of UV field due to dust and water itself become significant. The outer boundary is where the dust temperature drops below the water condensation temperature. A more luminous central star leads to a more extended distribution of warm water vapor, while dust growth and settling tends to reduce the amount of warm water vapor. Based on typical assumptions regarding the elemental oxygen abundance and the water chemistry, the column density of warm water vapor can be as high as 10{sup 22} cm{sup –2}. A small amount of hot water vapor with temperature higher than ?300 K exists in a more extended region in the upper atmosphere of the disk. Cold water vapor with temperature lower than 100 K is distributed over the entire disk, produced by photodesorption of the water ice.

  15. Photopumped red-emitting InP/In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition

    SciTech Connect (OSTI)

    Ryou, J. H.; Dupuis, R. D.; Walter, G.; Kellogg, D. A.; Holonyak, N.; Mathes, D. T.; Hull, R.; Reddy, C. V.; Narayanamurti, V.

    2001-06-25

    We report the 300 K operation of optically pumped red-emitting lasers fabricated from InP self-assembled quantum dots embedded in In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P layers on GaAs (100) substrates grown by metalorganic chemical vapor deposition. Quantum dots grown at 650{degree}C on In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P layers have a high density on the order of 10{sup 10} cm{sup {minus}2} and the dominant size of individual quantum dots ranges from {similar_to}5 to {similar_to}10 nm for 7.5 monolayer {open_quotes}equivalent growth.{close_quotes} These InP/In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P quantum dot heterostructures are characterized by atomic force microscopy, high-resolution transmission electron microscopy, and photoluminescence. Laser structures are prepared from wafers having two vertically stacked InP quantum dot active layers within a 100-nm-thick In{sub 0.5}Al{sub 0.3}Ga{sub 0.2}P waveguide and upper and lower 600 nm InAlP cladding layers. We observe lasing at {lambda}{similar_to}680 nm at room temperature in optically pumped samples. {copyright} 2001 American Institute of Physics.

  16. Microstructural and chemical evolution near anode triple phase boundary in Ni/YSZ solid oxide fuel cells

    SciTech Connect (OSTI)

    Chen, Yun; Chen, Song; Hackett, Gregory; Finklea, Harry; Song, Xueyan; Gerdes, Kirk

    2011-12-12

    In this study, we report the micro-structural and chemical evolution of anode grain boundaries and triple phase boundary (TPB) junctions of Ni/YSZ anode supported solid oxide fuel cells. A NiO phase was found to develop along the Ni/YSZ interfaces extending to TPBs in the operated cells. The thickness of the NiO ribbon phase remains constant at ~ 5 nm in hydrogen for operating durations up to 540 h. When operating on synthesis gas, an increase in interphase thickness was observed from ~ 11 nm for 24 h of operation to ~ 51 nm for 550 h of operation. YSZ phases are observed to be stable in H{sub 2} over 540 h of operation. However, for the cell operated in syngas for 550 h, a 5–10 nm tetragonal YSZ (t-YSZ) interfacial layer was identified that originated from the Ni/YSZ interfaces. Yttrium species seem to segregate to the interfaces during operation, leading to the formation of t-YSZ in the Y-depleted regions.

  17. VAPORIZATION THERMODYNAMICS OF KCl. COMBINING VAPOR PRESSURE AND GRAVIMETRIC DATA

    E-Print Network [OSTI]

    Rudnyi, Evgenii B.

    1 VAPORIZATION THERMODYNAMICS OF KCl. COMBINING VAPOR PRESSURE AND GRAVIMETRIC DATA Rudnyi E of thermodynamic properties of the vapor and the vaporization process, coupling pressure measurements. INTRODUCTION The vapor pressure of a substance is an important system property in many applications. Its value

  18. Vapor spill monitoring method

    DOE Patents [OSTI]

    Bianchini, Gregory M. (Livermore, CA); McRae, Thomas G. (Livermore, CA)

    1985-01-01

    Method for continuous sampling of liquified natural gas effluent from a spill pipe, vaporizing the cold liquified natural gas, and feeding the vaporized gas into an infrared detector to measure the gas composition. The apparatus utilizes a probe having an inner channel for receiving samples of liquified natural gas and a surrounding water jacket through which warm water is flowed to flash vaporize the liquified natural gas.

  19. Enabling integration of vapor-deposited polymer thin films

    E-Print Network [OSTI]

    Petruczok, Christy D. (Christy Danielle)

    2014-01-01

    Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

  20. Vapor Barriers or Vapor Diffusion Retarders | Department of Energy

    Energy Savers [EERE]

    vapor retarders: Class I vapor retarders (0.1 perms or less): Glass Sheet metal Polyethylene sheet Rubber membrane Class II vapor retarders (greater than 0.1 perms and less...

  1. Enthalpies of Vaporization and Vapor Pressures of Some Deuterated Hydrocarbons. Liquid-Vapor Pressure Isotope Effects

    E-Print Network [OSTI]

    Chickos, James S.

    Enthalpies of Vaporization and Vapor Pressures of Some Deuterated Hydrocarbons. Liquid-Vapor pressures as a function of temperature and enthalpies of vaporization of a series of both liquid and solid. The applicability of this technique is first demonstrated by reproducing the vapor pressure isotope effect

  2. Vapor Barriers or Vapor Diffusion Retarders | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    retarders. Materials such as rigid foam insulation, reinforced plastics, aluminum, and stainless steel are relatively resistant to water vapor diffusion. These types of vapor...

  3. Atomic vapor laser isotope separation

    SciTech Connect (OSTI)

    Stern, R.C.; Paisner, J.A.

    1986-08-15

    The atomic vapor laser isotope separation (AVLIS) process for the enrichment of uranium is evaluated. (AIP)

  4. Effect of oxidant concentration, exposure time, and seed particles on secondary organic aerosol chemical composition and yield

    E-Print Network [OSTI]

    Lambe, A. T.

    We performed a systematic intercomparison study of the chemistry and yields of secondary organic aerosol (SOA) generated from OH oxidation of a common set of gas-phase precursors in a Potential Aerosol Mass (PAM) continuous ...

  5. Quantum cascade laser investigations of CH{sub 4} and C{sub 2}H{sub 2} interconversion in hydrocarbon/H{sub 2} gas mixtures during microwave plasma enhanced chemical vapor deposition of diamond

    SciTech Connect (OSTI)

    Ma Jie; Cheesman, Andrew; Ashfold, Michael N. R.; Hay, Kenneth G.; Wright, Stephen; Langford, Nigel; Duxbury, Geoffrey; Mankelevich, Yuri A.

    2009-08-01

    CH{sub 4} and C{sub 2}H{sub 2} molecules (and their interconversion) in hydrocarbon/rare gas/H{sub 2} gas mixtures in a microwave reactor used for plasma enhanced diamond chemical vapor deposition (CVD) have been investigated by line-of-sight infrared absorption spectroscopy in the wavenumber range of 1276.5-1273.1 cm{sup -1} using a quantum cascade laser spectrometer. Parameters explored include process conditions [pressure, input power, source hydrocarbon, rare gas (Ar or Ne), input gas mixing ratio], height (z) above the substrate, and time (t) after addition of hydrocarbon to a pre-existing Ar/H{sub 2} plasma. The line integrated absorptions so obtained have been converted to species number densities by reference to the companion two-dimensional (r,z) modeling of the CVD reactor described in Mankelevich et al. [J. Appl. Phys. 104, 113304 (2008)]. The gas temperature distribution within the reactor ensures that the measured absorptions are dominated by CH{sub 4} and C{sub 2}H{sub 2} molecules in the cool periphery of the reactor. Nonetheless, the measurements prove to be of enormous value in testing, tensioning, and confirming the model predictions. Under standard process conditions, the study confirms that all hydrocarbon source gases investigated (methane, acetylene, ethane, propyne, propane, and butane) are converted into a mixture dominated by CH{sub 4} and C{sub 2}H{sub 2}. The interconversion between these two species is highly dependent on the local gas temperature and the H atom number density, and thus on position within the reactor. CH{sub 4}->C{sub 2}H{sub 2} conversion occurs most efficiently in an annular shell around the central plasma (characterized by 1400CH{sub 4} is favored in the more distant regions where T{sub gas}<1400 K. Analysis of the multistep interconversion mechanism reveals substantial net consumption of H atoms accompanying the CH{sub 4}->C{sub 2}H{sub 2} conversion, whereas the reverse C{sub 2}H{sub 2}->CH{sub 4} process only requires H atoms to drive the reactions; H atoms are not consumed by the overall conversion.

  6. Safety Topic Chemical Hood General purpose: prevent exposure to toxic, irritating, or noxious chemical

    E-Print Network [OSTI]

    Cohen, Robert E.

    Safety Topic ­ Chemical Hood General purpose: prevent exposure to toxic, irritating, or noxious chemical vapors and gases. A face velocity of 100 feet per minute (fpm) provides efficient vapor capture the better. (T) (F) A chemical hood can be used for storage of volatile, flammable, or odiferous materials

  7. Electrolyte vapor condenser

    DOE Patents [OSTI]

    Sederquist, Richard A. (Newington, CT); Szydlowski, Donald F. (East Hartford, CT); Sawyer, Richard D. (Canton, CT)

    1983-01-01

    A system is disclosed for removing electrolyte from a fuel cell gas stream. The gas stream containing electrolyte vapor is supercooled utilizing conventional heat exchangers and the thus supercooled gas stream is passed over high surface area passive condensers. The condensed electrolyte is then drained from the condenser and the remainder of the gas stream passed on. The system is particularly useful for electrolytes such as phosphoric acid and molten carbonate, but can be used for other electrolyte cells and simple vapor separation as well.

  8. Electrolyte vapor condenser

    DOE Patents [OSTI]

    Sederquist, R.A.; Szydlowski, D.F.; Sawyer, R.D.

    1983-02-08

    A system is disclosed for removing electrolyte from a fuel cell gas stream. The gas stream containing electrolyte vapor is supercooled utilizing conventional heat exchangers and the thus supercooled gas stream is passed over high surface area passive condensers. The condensed electrolyte is then drained from the condenser and the remainder of the gas stream passed on. The system is particularly useful for electrolytes such as phosphoric acid and molten carbonate, but can be used for other electrolyte cells and simple vapor separation as well. 3 figs.

  9. Devices and chemical sensing applications of metal oxide nanowires Guozhen Shen,* Po-Chiang Chen, Koungmin Ryu and Chongwu Zhou*

    E-Print Network [OSTI]

    Zhou, Chongwu

    . Finally, we will conclude this review with some perspectives and outlook on the future developments, nanogenerators, solar cells and photo- catalysts, and field nanoemitters. In the third part, we will discuss with some perspectives and outlook on the future developments in the metal oxide nanowire research area. 2

  10. Organic vapor jet printing system

    DOE Patents [OSTI]

    Forrest, Stephen R

    2012-10-23

    An organic vapor jet printing system includes a pump for increasing the pressure of an organic flux.

  11. Mixed oxide solid solutions

    DOE Patents [OSTI]

    Magno, Scott (Dublin, CA); Wang, Ruiping (Fremont, CA); Derouane, Eric (Liverpool, GB)

    2003-01-01

    The present invention is a mixed oxide solid solution containing a tetravalent and a pentavalent cation that can be used as a support for a metal combustion catalyst. The invention is furthermore a combustion catalyst containing the mixed oxide solid solution and a method of making the mixed oxide solid solution. The tetravalent cation is zirconium(+4), hafnium(+4) or thorium(+4). In one embodiment, the pentavalent cation is tantalum(+5), niobium(+5) or bismuth(+5). Mixed oxide solid solutions of the present invention exhibit enhanced thermal stability, maintaining relatively high surface areas at high temperatures in the presence of water vapor.

  12. Water vapor distribution in protoplanetary disks

    E-Print Network [OSTI]

    Du, Fujun

    2014-01-01

    Water vapor has been detected in protoplanetary disks. In this work we model the distribution of water vapor in protoplanetary disks with a thermo-chemical code. For a set of parameterized disk models, we calculate the distribution of dust temperature and radiation field of the disk with a Monte Carlo method, and then solve the gas temperature distribution and chemical composition. The radiative transfer includes detailed treatment of scattering by atomic hydrogen and absorption by water of Lyman alpha photons, since the Lyman alpha line dominates the UV spectrum of accreting young stars. In a fiducial model, we find that warm water vapor with temperature around 300 K is mainly distributed in a small and well-confined region in the inner disk. The inner boundary of the warm water region is where the shielding of UV field due to dust and water itself become significant. The outer boundary is where the dust temperature drops below the water condensation temperature. A more luminous central star leads to a more ...

  13. Stratified vapor generator

    DOE Patents [OSTI]

    Bharathan, Desikan (Lakewood, CO); Hassani, Vahab (Golden, CO)

    2008-05-20

    A stratified vapor generator (110) comprises a first heating section (H.sub.1) and a second heating section (H.sub.2). The first and second heating sections (H.sub.1, H.sub.2) are arranged so that the inlet of the second heating section (H.sub.2) is operatively associated with the outlet of the first heating section (H.sub.1). A moisture separator (126) having a vapor outlet (164) and a liquid outlet (144) is operatively associated with the outlet (124) of the second heating section (H.sub.2). A cooling section (C.sub.1) is operatively associated with the liquid outlet (144) of the moisture separator (126) and includes an outlet that is operatively associated with the inlet of the second heating section (H.sub.2).

  14. Graphene Electronic Device Based Biosensors and Chemical Sensors

    E-Print Network [OSTI]

    Jiang, Shan

    2014-01-01

    116] Perkins, F.K. et al. Chemical Vapor Sensing with Monoof Monolayer MoS 2 via Chemical Doping, Nano Letters 13,of axial ligands on the surface chemical bonds of adsorbed

  15. The vapor pressures of explosives

    SciTech Connect (OSTI)

    Ewing, Robert G.; Waltman, Melanie J.; Atkinson, David A.; Grate, Jay W.; Hotchkiss, Peter

    2013-01-05

    The vapor pressures of many explosive compounds are extremely low and thus determining accurate values proves difficult. Many researchers, using a variety of methods, have measured and reported the vapor pressures of explosives compounds at single temperatures, or as a function of temperature using vapor pressure equations. There are large variations in reported vapor pressures for many of these compounds, and some errors exist within individual papers. This article provides a review of explosive vapor pressures and describes the methods used to determine them. We have compiled primary vapor pressure relationships traceable to the original citations and include the temperature ranges for which they have been determined. Corrected values are reported as needed and described in the text. In addition, after critically examining the available data, we calculate and tabulate vapor pressures at 25 °C.

  16. Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se{sub 2} thin-film solar cell absorbers

    SciTech Connect (OSTI)

    Lehmann, Jascha; Lehmann, Sebastian; Lauermann, Iver; Rissom, Thorsten; Kaufmann, Christian A.; Lux-Steiner, Martha Ch.; Bär, Marcus; Sadewasser, Sascha

    2014-12-21

    Currently, Cu-containing chalcopyrite-based solar cells provide the highest conversion efficiencies among all thin-film photovoltaic (PV) technologies. They have reached efficiency values above 20%, the same performance level as multi-crystalline silicon-wafer technology that dominates the commercial PV market. Chalcopyrite thin-film heterostructures consist of a layer stack with a variety of interfaces between different materials. It is the chalcopyrite/buffer region (forming the p-n junction), which is of crucial importance and therefore frequently investigated using surface and interface science tools, such as photoelectron spectroscopy and scanning probe microscopy. To ensure comparability and validity of the results, a general preparation guide for “realistic” surfaces of polycrystalline chalcopyrite thin films is highly desirable. We present results on wet-chemical cleaning procedures of polycrystalline Cu(In{sub 1-x}Ga{sub x})Se{sub 2} thin films with an average x?=?[Ga]/([In]?+?[Ga])?=?0.29, which were exposed to ambient conditions for different times. The hence natively oxidized sample surfaces were etched in KCN- or NH{sub 3}-based aqueous solutions. By x-ray photoelectron spectroscopy, we find that the KCN treatment results in a chemical surface structure which is – apart from a slight change in surface composition – identical to a pristine as-received sample surface. Additionally, we discover a different oxidation behavior of In and Ga, in agreement with thermodynamic reference data, and we find indications for the segregation and removal of copper selenide surface phases from the polycrystalline material.

  17. Diphenylarsinic acid, a chemical warfare-related neurotoxicant, promotes liver carcinogenesis via activation of aryl hydrocarbon receptor signaling and consequent induction of oxidative DAN damage in rats

    SciTech Connect (OSTI)

    Wei, Min; Yamada, Takanori; Yamano, Shotaro; Kato, Minoru; Kakehashi, Anna; Fujioka, Masaki; Tago, Yoshiyuki; Kitano, Mistuaki; Wanibuchi, Hideki, E-mail: wani@med.osaka-cu.ac.jp

    2013-11-15

    Diphenylarsinic acid (DPAA), a chemical warfare-related neurotoxic organic arsenical, is present in the groundwater and soil in some regions of Japan due to illegal dumping after World War II. Inorganic arsenic is carcinogenic in humans and its organic arsenic metabolites are carcinogenic in animal studies, raising serious concerns about the carcinogenicity of DPAA. However, the carcinogenic potential of DPAA has not yet been evaluated. In the present study we found that DPAA significantly enhanced the development of diethylnitrosamine-induced preneoplastic lesions in the liver in a medium-term rat liver carcinogenesis assay. Evaluation of the expression of cytochrome P450 (CYP) enzymes in the liver revealed that DPAA induced the expression of CYP1B1, but not any other CYP1, CYP2, or CYP3 enzymes, suggesting that CYP1B1 might be the enzyme responsible for the metabolic activation of DPAA. We also found increased oxidative DNA damage, possibly due to elevated CYP1B1 expression. Induction of CYP1B1 has generally been linked with the activation of AhR, and we found that DPAA activates the aryl hydrocarbon receptor (AhR). Importantly, the promotion effect of DPAA was observed only at a dose that activated the AhR, suggesting that activation of AhR and consequent induction of AhR target genes and oxidative DNA damage plays a vital role in the promotion effects of DPAA. The present study provides, for the first time, evidence regarding the carcinogenicity of DPAA and indicates the necessity of comprehensive evaluation of its carcinogenic potential using long-term carcinogenicity studies. - Highlights: • DPAA, an environmental neurotoxicant, promotes liver carcinogenesis in rats. • DPAA is an activator of AhR signaling pathway. • DPAA promoted oxidative DNA damage in rat livers. • AhR target gene CYP 1B1 might be involved in the metabolism of DPAA.

  18. Economic and Technical Tradeoffs Between Open and Closed Cycle Vapor Compression Evaporators 

    E-Print Network [OSTI]

    Timm, M. L.

    1986-01-01

    AND TECHNICAL TRADEOFFS BETWEEN OPEN AND CLOSED CYCLE VAPOR COM~RESSION EVAPORATORS Martin L. Timm, P.E. Bassett Inc. Appleton, WI ABSTRACT Evaporators are used extensively in the chemical, pulp Bnd paper, food and beverage, and related industries.... Mechanical vapor recompression (MVR) evaporators are a type using an open heat pump cycle with steam as the working fluid. The tech nology is widely used and time-proven. Closed cycle vapor compression is an emerging technology. A secondary working fluid...

  19. Removal of hydrogen sulfide as ammonium sulfate from hydropyrolysis product vapors

    DOE Patents [OSTI]

    Marker, Terry L; Felix, Larry G; Linck, Martin B; Roberts, Michael J

    2014-10-14

    A system and method for processing biomass into hydrocarbon fuels that includes processing a biomass in a hydropyrolysis reactor resulting in hydrocarbon fuels and a process vapor stream and cooling the process vapor stream to a condensation temperature resulting in an aqueous stream. The aqueous stream is sent to a catalytic reactor where it is oxidized to obtain a product stream containing ammonia and ammonium sulfate. A resulting cooled product vapor stream includes non-condensable process vapors comprising H.sub.2, CH.sub.4, CO, CO.sub.2, ammonia and hydrogen sulfide.

  20. Operando NMR and XRD study of chemically synthesized LiCx oxidation in a dry room environment

    SciTech Connect (OSTI)

    Sacci, Robert L [ORNL; Gill, Lance W [ORNL; Hagaman, Edward {Ed} W [ORNL; Dudney, Nancy J [ORNL

    2015-01-01

    We test the stability of pre-lithiated graphite anodes for Li-ion batteries in a dry room battery processing room. The reaction between LiCx and laboratory air was followed using operando NMR and x-ray diffraction as these methods are sensitive to change in Li stoichiometry in graphite. There is minimal reactivity between LiC6 and N2, CO2 or O2; however, LiC6 reacts with moisture to form lithium (hydr)oxide. The reaction rate follows zero-order kinetics with respects to intercalated lithium suggesting that lithium transport through the graphite is fast. The reaction mechanism occurs by sequential formation of higher stages LiC12, then LiC18, and then LiC24 as the hydrolysis proceeds to the formation of LixOHy and graphite end products. Slowing down the formation rate of the LixOHy passivation layer stabilizes of the higher stages.

  1. Influence of the chemical surface structure on the nanoscale friction in plasma nitrided and post-oxidized ferrous alloy

    SciTech Connect (OSTI)

    Freislebem, Márcia; Menezes, Caren M.; Cemin, Felipe; Costi, Fernanda B.; Ferreira, Patrícia A.; Aguzzoli, César; Baumvol, Israel J. R.; Alvarez, Fernando; Figueroa, Carlos A.

    2014-09-15

    Friction is a ubiquitous phenomenon in everyday activities spanning from vehicles where efficient brakes are mandatory up to mechanical devices where its minimum effects are pursued for energy efficiency issues. Recently, theoretical models succeed correlating the friction behavior with energy transference via phonons between sliding surfaces. Therefore, considering that the energy losses by friction are prompted through phonons, the chemical surface structure between sliding surfaces is very important to determine the friction phenomenon. In this work, we address the issue of friction between a conical diamond tip sliding on different functionalized flat steel surfaces by focusing the influence of the chemical bonds in the outermost layers on the sliding resistance. This geometry allows probing the coupling of the sharp tip with terminator species on the top and underneath material surface at in-depth friction measurements from 20 to 200?nm. Experimentally, the friction coefficient decreases when nitrogen atoms are substituted for oxygen in the iron network. This effect is interpreted as due to energy losses through phonons whilst lower vibrational frequency excitation modes imply lower friction coefficients and a more accurate adjustment is obtained when a theoretical model with longitudinal adsorbate vibration is used.

  2. Vapor Transport in Dry Soils

    SciTech Connect (OSTI)

    Gee, Glendon W.; Ward, Anderson L.

    2001-11-16

    Water-vapor movement in soils is a complex process, controlled by both diffusion and advection and influenced by pressure and thermal gradients acting across tortuous flow paths. Wide-ranging interest in water-vapor transport includes both theoretical and practical aspects. Just how pressure and thermal gradients enhance water-vapor flow is still not completely understood and subject to ongoing research. Practical aspects include dryland farming (surface mulching), water harvesting (aerial wells), fertilizer placement, and migration of contaminants at waste-sites. The following article describes the processes and practical applications of water-vapor transport, with emphasis on unsaturated (dry) soil systems.

  3. Operando NMR and XRD study of chemically synthesized LiCx oxidation in a dry room environment

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sacci, Robert L.; Gill, Lance W.; Hagaman, Edward W.; Dudney, Nancy J.

    2015-08-01

    We test the stability of pre-lithiated graphite anodes for Li-ion batteries in a dry room battery processing room. The reaction between LiCx and laboratory air was followed using operando NMR and x-ray diffraction as these methods are sensitive to change in Li stoichiometry in graphite. There is minimal reactivity between LiC6 and N2, CO2 or O2; however, LiC6 reacts with moisture to form lithium (hydr)oxide. The reaction rate follows zero-order kinetics with respects to intercalated lithium suggesting that lithium transport through the graphite is fast. The reaction mechanism occurs by sequential formation of higher stages LiC12, then LiC18, and thenmore »LiC24 as the hydrolysis proceeds to the formation of LixOHy and graphite end products. Slowing down the formation rate of the LixOHy passivation layer stabilizes of the higher stages.« less

  4. Vapor spill pipe monitor

    DOE Patents [OSTI]

    Bianchini, G.M.; McRae, T.G.

    1983-06-23

    The invention is a method and apparatus for continually monitoring the composition of liquefied natural gas flowing from a spill pipe during a spill test by continually removing a sample of the LNG by means of a probe, gasifying the LNG in the probe, and sending the vaporized LNG to a remote ir gas detector for analysis. The probe comprises three spaced concentric tubes surrounded by a water jacket which communicates with a flow channel defined between the inner and middle, and middle and outer tubes. The inner tube is connected to a pump for providing suction, and the probe is positioned in the LNG flow below the spill pipe with the tip oriented partly downward so that LNG is continuously drawn into the inner tube through a small orifice. The probe is made of a high thermal conductivity metal. Hot water is flowed through the water jacket and through the flow channel between the three tubes to provide the necessary heat transfer to flash vaporize the LNG passing through the inner channel of the probe. The gasified LNG is transported through a connected hose or tubing extending from the probe to a remote ir sensor which measures the gas composition.

  5. Vapor Synthesis and Thermal Modification of Supportless Platinum-Ruthenium Nanotubes and Application as Methanol Electrooxidation Catalysts

    SciTech Connect (OSTI)

    Atkinson III, Robert [University of Tennessee (UT); Unocic, Raymond R [ORNL; Unocic, Kinga A [ORNL; Veith, Gabriel M [ORNL; Papandrew, Alexander B [ORNL; Zawodzinski, Thomas A [ORNL

    2015-01-01

    Metallic, mixed-phase, and alloyed bimetallic Pt-Ru nanotubes were synthesized by a novel route based on the sublimation of metal acetylacetonate precursors and their subsequent vapor deposition within anodic alumina templates. Nanotube architectures were tuned by thermal annealing treatments. As-synthesized nanotubes are composed of nanoparticulate, metallic platinum and hydrous ruthenium oxide whose respective thicknesses depend on the sample chemical composition. The Pt-decorated, hydrous Ru oxide nanotubes may be thermally annealed to promote a series of chemical and physical changes to the nanotube structures including alloy formation, crystallite growth and morphological evolution. Annealed Pt-Ru alloy nanotubes and their as-synthesized analogs demonstrate relatively high specific activities for the oxidation of methanol. As-synthesized, mixed-phase Pt-Ru nanotubes (0.39 mA/cm2) and metallic alloyed Pt64Ru36NTs (0.33 mA/cm2) have considerably higher area-normalized activities than PtRu black (0.22 mA/cm2) at 0.65 V vs. RHE.

  6. Comprehensive chemical kinetic modeling of the oxidation of C8 and larger n-alkanes and 2-methylalkanes

    SciTech Connect (OSTI)

    Sarathy, S M; Westbrook, C K; Pitz, W J; Mehl, M; Togbe, C; Dagaut, P; Wang, H; Oehlschlaeger, M; NIemann, U; Seshadri, K; Veloo, P S; Ji, C; Egolfopoulos, F; Lu, T

    2011-03-16

    Conventional petroleum jet and diesel fuels, as well as alternative Fischer-Tropsch (FT) fuels and hydrotreated renewable jet (HRJ) fuels, contain high molecular weight lightly branched alkanes (i.e., methylalkanes) and straight chain alkanes (n-alkanes). Improving the combustion of these fuels in practical applications requires a fundamental understanding of large hydrocarbon combustion chemistry. This research project presents a detailed and reduced chemical kinetic mechanism for singly methylated iso-alkanes (i.e., 2-methylalkanes) ranging from C{sub 8} to C{sub 20}. The mechanism also includes an updated version of our previously published C{sub 8} to C{sub 16} n-alkanes model. The complete detailed mechanism contains approximately 7,200 species 31,400 reactions. The proposed model is validated against new experimental data from a variety of fundamental combustion devices including premixed and nonpremixed flames, perfectly stirred reactors and shock tubes. This new model is used to show how the presence of a methyl branch affects important combustion properties such as laminar flame propagation, ignition, and species formation.

  7. Wet chemical synthesis of quantum confined nanostructured tin oxide thin films by successive ionic layer adsorption and reaction technique

    SciTech Connect (OSTI)

    Murali, K.V., E-mail: kvmuralikv@gmail.com [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Nehru Arts and Science College, Kanhangad, Kerala 671314 (India); Ragina, A.J. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Nehru Arts and Science College, Kanhangad, Kerala 671314 (India); Preetha, K.C. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Sree Narayana College, Kannur, Kerala 670007 (India); Deepa, K.; Remadevi, T.L. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Pazhassi Raja N.S.S. College, Mattannur, Kerala 670702 (India)

    2013-09-01

    Graphical abstract: - Highlights: • Quantum confined SnO{sub 2} thin films were synthesized at 80 °C by SILAR technique. • Film formation mechanism is discussed. • Films with snow like crystallite morphology offer high specific surface area. • The blue-shifted value of band gap confirmed the quantum confinement effect. • Present synthesis has advantages – low cost, low temperature and green friendly. - Abstract: Quantum confined nanostructured SnO{sub 2} thin films were synthesized at 353 K using ammonium chloride (NH{sub 4}Cl) and other chemicals by successive ionic layer adsorption and reaction technique. Film formation mechanism is discussed. Structural, morphological, optical and electrical properties were investigated and compared with the as-grown and annealed films fabricated without NH{sub 4}Cl solution. SnO{sub 2} films were polycrystalline with crystallites of tetragonal structure with grain sizes lie in the 5–8 nm range. Films with snow like crystallite morphology offer high specific surface area. The blue-shifted value of band gap of as-grown films confirmed the quantum confinement effect of grains. Refractive index of the films lies in the 2.1–2.3 range. Films prepared with NH{sub 4}Cl exhibit relatively lower resistivity of the order of 10{sup 0}–10{sup ?1} ? cm. The present synthesis has advantages such as low cost, low temperature and green friendly, which yields small particle size, large surface–volume ratio, and high crystallinity SnO{sub 2} films.

  8. Vapor Pressures and Vaporization Enthalpies of a Series of Dialkyl Phthalates by Correlation Gas Chromatography

    E-Print Network [OSTI]

    Chickos, James S.

    Vapor Pressures and Vaporization Enthalpies of a Series of Dialkyl Phthalates by Correlation Gas: Experimental vapor pressures, vaporization, fusion and sublimation enthalpies of a number of dialkyl, dibutyl phthalate, and bis(2-ethylhexyl) phthalate. New vaporization enthalpies and liquid vapor pressure

  9. The Vaporization Enthalpies and Vapor Pressures of Some Primary Amines of Pharmaceutical Importance by Correlation Gas

    E-Print Network [OSTI]

    Chickos, James S.

    The Vaporization Enthalpies and Vapor Pressures of Some Primary Amines of Pharmaceutical Importance Information ABSTRACT: Vapor pressures, vaporization, and sublimation enthalpies of several pharmaceuticals.5 ± 2.1); p(cr)/Pa = 0.12 ± 0.04]. Vapor pressure equations also derived from vapor pressureretention

  10. Diffusion-flame burning of fuel-vapor pockets in air

    SciTech Connect (OSTI)

    Fendell, F.E.; Bush, W.B.; Mitchell, J.A.; Fink, S.F. IV . Center for Propulsion Technology and Fluid Mechanics)

    1994-08-01

    The authors examine analytically, with numerical assistance, the unsteady, diffusively limited burnup of initially unmixed fuel vapor and gaseous oxidizer. They study three simple spherical geometries: (1) an initially uniform sphere of fuel vapor immersed in an unbounded expanse of oxidizer; (2) a variant on case 1 in which only a finite concentric annulus of enveloping oxidizer is available for the burning of the initially uniform sphere of fuel vapor; and (3) an impervious sphere, consisting initially of one uniform hemisphere of fuel vapor and one uniform hemisphere of oxidizer. Of particular interest is the time interval for the exhaustion of the lean reactant, as a function of the fuel-to-oxidizer stoichiometry and the sphere radius. The motivation for these studies is to ascertain the fate of inhomogeneous blobs that arise as a consequence of imperfect fuel/air mixing, e.g., in the context of a supersonic combustor. In such a context, an inhomogeneous blob of gaseous mixture, idealized to have the geometry of a sphere, is examined as a Lagrangian element, as it is convected downstream, without slip, by the surrounding gaseous flow. The longest time for diffusional burnup, for the spherically enclosed geometries, arises for the case in which the fuel vapor and oxidizer are present in stoichiometric proportion.

  11. Nanoscale Chemical Imaging of a Working Catalyst

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanoscale Chemical Imaging of a Working Catalyst Print The heterogeneous catalysts used in most chemical processes typically consist of nanoscale metal or metal oxide particles...

  12. Method for forming H2-permselective oxide membranes

    DOE Patents [OSTI]

    Gavalas, G.R.; Nam, S.W.; Tsapatsis, M.; Kim, S.

    1995-09-26

    Methods are disclosed for forming permselective oxide membranes that are highly selective to permeation of hydrogen by chemical deposition of reactants in the pore of porous tubes, such as Vycor{trademark} glass or Al{sub 2}O{sub 3} tubes. The porous tubes have pores extending through the tube wall. The process involves forming a stream containing a first reactant of the formula RX{sub n}, wherein R is silicon, titanium, boron or aluminum, X is chlorine, bromine or iodine, and n is a number which is equal to the valence of R; and forming another stream containing water vapor as the second reactant. Both of the reactant streams are passed along either the outside or the inside surface of a porous tube and the streams react in the pores of the porous tube to form a nonporous layer of R-oxide in the pores. The membranes are formed by the hydrolysis of the respective halides. In another embodiment, the first reactant stream contains a first reactant having the formula SiH{sub n}Cl{sub 4{minus}n} where n is 1, 2 or 3; and the second reactant stream contains water vapor and oxygen. In still another embodiment the first reactant stream containing a first reactant selected from the group consisting of Cl{sub 3}SiOSiCl{sub 3}, Cl{sub 3}SiOSiCl{sub 2}OSiCl{sub 3}, and mixtures thereof and the second reactant stream contains water vapor. In still another embodiment, membrane formation is carried out by an alternating flow deposition method. This involves a sequence of cycles, each cycle comprising introduction of the halide-containing stream and allowance of a specific time for reaction followed by purge and flow of the water vapor containing stream for a specific length of time. In all embodiments the nonporous layers formed are selectively permeable to hydrogen. 11 figs.

  13. Coherent Anti-Stokes Raman-Spectroscopy Studies of Nitric-Oxide 

    E-Print Network [OSTI]

    Beckmann, A.; Fietz, H.; Kiefer, W.; Laane, Jaan

    1981-01-01

    Due to the ever decreasing dimensions of the inter-level metallic interconnects, alternative metal deposition processes must be explored as the current processes (chemical vapor deposition (CVD) and physical vapor deposition ...

  14. Influence of oxide impurities on the chemical tuning of the thermoelectric properties of substitution derivatives of RuIn{sub 3}

    SciTech Connect (OSTI)

    Wagner-Reetz, Maik, E-mail: Maik.Wagner@cpfs.mpg.de; Cardoso-Gil, Raul; Schmidt, Marcus; Grin, Yuri, E-mail: Juri.Grin@cpfs.mpg.de

    2014-07-01

    A systematic investigation on tuning the charge carrier concentration by substitution of the Ru position in RuIn{sub 3} is performed. Samples with nominal composition Ru{sub 0.95}T{sub 0.05}In{sub 3} (T=Re, Rh, Ir) were synthesized via liquid–solid-reaction and subsequent spark plasma sintering treatment. The chemical composition was characterized by X-ray, metallographic and microstructure analysis revealing solid solutions in the samples with Rh and Ir, whereas Re cannot be incorporated in RuIn{sub 3}. Minor oxide impurities in the commercially available starting elements, the homogeneity range of RuIn{sub 3} and the redox potentials of the participating elements are the key for interpreting the observed lattice parameters and the corresponding composition. Both, substitutions with Rh or Ir and Re inclusions in RuIn{sub 3} lead independently to a significant decrease of the total thermal conductivity down to approximately one half of the value observed for binary RuIn{sub 3}, prepared with commercially available starting materials. The electrical resistivity was reduced by substitution and the temperature dependence changes from semiconductor-like, for RuIn{sub 3}, to metal-like in the substitution derivatives. At the same time the sign change in the thermopower at high temperatures, characteristic for binary RuIn{sub 3}, is suppressed, attaining only electrons as majority carriers. - Graphical abstract: Microstructure (perpendicular to the pressure axis; polarized light) of polycrystalline Ru{sub 0.95}Rh{sub 0.05}In{sub 3} (a), Ru{sub 0.95}Ir{sub 0.05}In{sub 3} (b) and Ru{sub 0.95}Re{sub 0.05}In{sub 3} (c) samples after SPS treatment. - Highlights: • Substitution solid solutions of RuIn{sub 3} were prepared via liquid–solid-reaction. • Chemistry of oxide impurities is crucial for explanation of experimental results. • Thermodynamic calculations support the observation of In{sub 2}O{sub 3} or ZnO as impurities. • Electrical resistivity is reduced by substitution. • Temperature dependence of resistivity changes from semiconductor- to metal-like.

  15. Fixation of nitrogen in the presence of water vapor

    DOE Patents [OSTI]

    Harteck, Paul (Santa Barbara, CA)

    1984-01-01

    A process for the fixation of nitrogen is disclosed which comprises combining a mixture of nitrogen, oxygen, metal oxide and water vapor, initially heating the combination to initiate a reaction which forms nitrate, but at a temperature and pressure range below the dissociation pressure of the nitrate. With or without the water component, the yield of fixed nitrogen is increased by the use of a Linde Molecular Sieve Catalyst.

  16. Removal of Sarin Aerosol and Vapor by Water Sprays

    SciTech Connect (OSTI)

    Brockmann, John E.

    1998-09-01

    Falling water drops can collect particles and soluble or reactive vapor from the gas through which they fall. Rain is known to remove particles and vapors by the process of rainout. Water sprays can be used to remove radioactive aerosol from the atmosphere of a nuclear reactor containment building. There is a potential for water sprays to be used as a mitigation technique to remove chemical or bio- logical agents from the air. This paper is a quick-look at water spray removal. It is not definitive but rather provides a reasonable basic model for particle and gas removal and presents an example calcu- lation of sarin removal from a BART station. This work ~ a starting point and the results indicate that further modeling and exploration of additional mechanisms for particle and vapor removal may prove beneficial.

  17. Hypothetical Thermodynamic Properties. Subcooled Vaporization Enthalpies and Vapor Pressures of Polyaromatic Heterocycles and Related Compounds

    E-Print Network [OSTI]

    Chickos, James S.

    Hypothetical Thermodynamic Properties. Subcooled Vaporization Enthalpies and Vapor Pressures The vaporization enthalpies and vapor pressures of the liqiud phase from T ) 298.15 K to T ) 500 K of a series in the literature was measured on a hydrated form. Vapor pressures and normal boiling temperatures for the liquid

  18. Vaporization Enthalpy and Vapor Pressure of Valproic Acid by Correlation Gas Chromatography

    E-Print Network [OSTI]

    Chickos, James S.

    Vaporization Enthalpy and Vapor Pressure of Valproic Acid by Correlation Gas Chromatography Joe A-propylpentanoic acid) is reported, and the vapor pressures of a series on aliphatic carboxylic acids are used to evaluate its vapor pressure as a function of temperature. The vaporization enthalpy was derived

  19. Effect of higher water vapor content on TBC performance

    SciTech Connect (OSTI)

    Pint, Bruce A; Haynes, James A

    2012-01-01

    Coal gasification, or IGCC (integrated gasification combined cycle), is one pathway toward cleaner use of coal for power generation with lower emissions. However, when coal-derived synthesis gas (i.e., syngas) is burned in turbines designed for natural gas, turbine manufacturers recommend 'derating,' or lowering the maximum temperature, which lowers the efficiency of the turbine, making electricity from IGCC more expensive. One possible reason for the derating is the higher water vapor contents in the exhaust gas. Water vapor has a detrimental effect on many oxidation-resistant high-temperature materials. In a turbine hot section, Ni-base superalloys are coated with a thermal barrier coating (TBC) allowing the gas temperature to be higher than the superalloy solidus temperature. TBCs have a low thermal conductivity ceramic top coating (typically Y{sub 2}O{sub 3}-stabilized ZrO{sub 2}, or YSZ) and an oxidation-resistant metallic bond coating. For land-based gas turbines, the industry standard is air plasma sprayed (APS) YSZ and high velocity oxygen fuel (HVOF) sprayed NiCoCrAlY bond coatings. To investigate the role of higher water vapor content on TBC performance and possible mitigation strategies, furnace cycling experiments were conducted in dry O{sub 2} and air with 10% (typical with natural gas or jet fuel) or 50 vol% water vapor. Cycle frequency and temperature were accelerated to one hour at 1100 C (with 10 minute cooling to {approx}30 C between each thermal cycle) to induce early failures in coatings that are expected to operate for several years with a metal temperature of {approx}900 C. Coupons (16 mm diameter x 2 mm thick) of commercial second-generation single crystal superalloy CMSX4 were HVOF coated on both sides with {approx}125 {micro}m of Ni-22wt%Co-17Cr-12Al either with 0.7Y or 0.7Y-0.3Hf-0.4Si. One side was then coated with 190-240 {micro}m of APS YSZ. Coatings were cycled until the YSZ top coating spalled. Figure 2 shows the results of the initial phase of experiments. Compared to dry O{sub 2}, the addition of 10% water vapor decreased the lifetime of MCrAlY by {approx}30% for the conventional CMSX4 substrates. Higher average lifetimes were observed with Hf in the bond coating, but a similar decrease in lifetime was observed when water vapor was added. The addition of Y and La to the superalloy substrate did not change the YSZ lifetime with 10% water vapor. However, increasing water vapor content from 10 to 50% did not further decrease the lifetime of either bond coating with the doped superalloy substrate. Thus, these results suggest that higher water vapor contents cannot explain the derating of syngas-fired turbines, and other factors such as sulfur and ash from imperfect syngas cleanup (or upset conditions) need to be explored. Researchers continue to study effects of water vapor on thermally grown alumina scale adhesion and growth rate, and are looking for bond coating compositions more resistant to oxidation in the presence of water vapor.

  20. Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy

    E-Print Network [OSTI]

    2008-01-01

    Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byrate enhancement is due to a photo-chemical process. Thenanocrystals can be rapidly photo-oxidized. This oxidation

  1. Oxidative Tritium Decontamination System

    DOE Patents [OSTI]

    Gentile, Charles A. (Plainsboro, NJ), Guttadora, Gregory L. (Highland Park, NJ), Parker, John J. (Medford, NJ)

    2006-02-07

    The Oxidative Tritium Decontamination System, OTDS, provides a method and apparatus for reduction of tritium surface contamination on various items. The OTDS employs ozone gas as oxidizing agent to convert elemental tritium to tritium oxide. Tritium oxide vapor and excess ozone gas is purged from the OTDS, for discharge to atmosphere or transport to further process. An effluent stream is subjected to a catalytic process for the decomposition of excess ozone to diatomic oxygen. One of two configurations of the OTDS is employed: dynamic apparatus equipped with agitation mechanism and large volumetric capacity for decontamination of light items, or static apparatus equipped with pressurization and evacuation capability for decontamination of heavier, delicate, and/or valuable items.

  2. Oxide Dispersion Strengthened Iron Aluminide by CVD Coated Powders

    SciTech Connect (OSTI)

    Asit Biswas Andrew J. Sherman

    2006-09-25

    This I &I Category2 program developed chemical vapor deposition (CVD) of iron, aluminum and aluminum oxide coated iron powders and the availability of high temperature oxidation, corrosion and erosion resistant coating for future power generation equipment and can be used for retrofitting existing fossil-fired power plant equipment. This coating will provide enhanced life and performance of Coal-Fired Boilers components such as fire side corrosion on the outer diameter (OD) of the water wall and superheater tubing as well as on the inner diameter (ID) and OD of larger diameter headers. The program also developed a manufacturing route for readily available thermal spray powders for iron aluminide coating and fabrication of net shape component by powder metallurgy route using this CVD coated powders. This coating can also be applid on jet engine compressor blade and housing, industrial heat treating furnace fixtures, magnetic electronic parts, heating element, piping and tubing for fossil energy application and automotive application, chemical processing equipment , heat exchanger, and structural member of aircraft. The program also resulted in developing a new fabrication route of thermal spray coating and oxide dispersion strengthened (ODS) iron aluminide composites enabling more precise control over material microstructures.

  3. Heterogeneous catalysis and nanoscience are used to promote chemical transformations for energy production. These concepts are important in solid oxide fuel cells (SOFCs) which have the

    E-Print Network [OSTI]

    production. These concepts are important in solid oxide fuel cells (SOFCs) which have the potential in the Solid Oxide Fuel Cell Rio Cavendish Advisor: Peter Crozier October 17, 2012; 10:00 AM; ERC 490 School to provide an efficient and environmentally favorable power generation system. The SOFC is fuel

  4. Vaporization Enthalpies and Vapor Pressures of Two Insecticide Components, Muscalure and Empenthrin, by Correlation Gas

    E-Print Network [OSTI]

    Chickos, James S.

    Vaporization Enthalpies and Vapor Pressures of Two Insecticide Components, Muscalure and Empenthrin: The vaporization enthalpies at T/K = 298.15 and vapor pressures from T/K = (298.15 to Tnb (normal boiling. Vaporization enthalpies of [(114.4 ± 1.0) and (114.5 ± 1.0)] kJ·mol-1 and vapor pressures, p/Pa = [(1.2 ± 0

  5. METAL OXIDE NANOPARTICLES

    SciTech Connect (OSTI)

    FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

    2007-10-01

    This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

  6. Image Storage in Hot Vapors

    E-Print Network [OSTI]

    L. Zhao; T. Wang; Y. Xiao; S. F. Yelin

    2007-10-22

    We theoretically investigate image propagation and storage in hot atomic vapor. A $4f$ system is adopted for imaging and an atomic vapor cell is placed over the transform plane. The Fraunhofer diffraction pattern of an object in the object plane can thus be transformed into atomic Raman coherence according to the idea of ``light storage''. We investigate how the stored diffraction pattern evolves under diffusion. Our result indicates, under appropriate conditions, that an image can be reconstructed with high fidelity. The main reason for this procedure to work is the fact that diffusion of opposite-phase components of the diffraction pattern interfere destructively.

  7. Vapor generation methods for explosives detection research

    SciTech Connect (OSTI)

    Grate, Jay W.; Ewing, Robert G.; Atkinson, David A.

    2012-12-01

    The generation of calibrated vapor samples of explosives compounds remains a challenge due to the low vapor pressures of the explosives, adsorption of explosives on container and tubing walls, and the requirement to manage (typically) multiple temperature zones as the vapor is generated, diluted, and delivered. Methods that have been described to generate vapors can be classified as continuous or pulsed flow vapor generators. Vapor sources for continuous flow generators are typically explosives compounds supported on a solid support, or compounds contained in a permeation or diffusion device. Sources are held at elevated isothermal temperatures. Similar sources can be used for pulsed vapor generators; however, pulsed systems may also use injection of solutions onto heated surfaces with generation of both solvent and explosives vapors, transient peaks from a gas chromatograph, or vapors generated by s programmed thermal desorption. This article reviews vapor generator approaches with emphasis on the method of generating the vapors and on practical aspects of vapor dilution and handling. In addition, a gas chromatographic system with two ovens that is configurable with up to four heating ropes is proposed that could serve as a single integrated platform for explosives vapor generation and device testing. Issues related to standards, calibration, and safety are also discussed.

  8. Vacuum vapor deposition gun assembly

    DOE Patents [OSTI]

    Zeren, Joseph D. (Boulder, CO)

    1985-01-01

    A vapor deposition gun assembly includes a hollow body having a cylindrical outer surface and an end plate for holding an adjustable heat sink, a hot hollow cathode gun, two magnets for steering the plasma from the gun into a crucible on the heat sink, and a shutter for selectively covering and uncovering the crucible.

  9. Atomic vapor laser isotope separation process

    DOE Patents [OSTI]

    Wyeth, R.W.; Paisner, J.A.; Story, T.

    1990-08-21

    A laser spectroscopy system is utilized in an atomic vapor laser isotope separation process. The system determines spectral components of an atomic vapor utilizing a laser heterodyne technique. 23 figs.

  10. Vapor Pressures and Vaporization, Sublimation, and Fusion Enthalpies of Some Fatty Acids

    E-Print Network [OSTI]

    Chickos, James S.

    Vapor Pressures and Vaporization, Sublimation, and Fusion Enthalpies of Some Fatty Acids Joe A vapor pressures of both the subcooled liquid and solid state for those materials that are solids at T/K = 298.15. Equations for the prediction of vapor pressure from T/K = 298.15 to the boiling temperature

  11. Chemical reactivities of ambient air samples in three Southern California communities

    E-Print Network [OSTI]

    2015-01-01

    and A.K. Cho. 2012. The chemical biology of naphthoquinonesinvolvement of organic chemicals and oxidative stress. Curr.www.tandfonline.com/loi/uawm20 Chemical reactivities of

  12. Chromium Vaporization Reduction by Nickel Coatings For SOEC Interconnect Materials

    SciTech Connect (OSTI)

    Michael V. Glazoff; Sergey N. Rashkeev; J. Stephen Herring

    2014-09-01

    The vaporization of Cr-rich volatile species from interconnect materials is a major source of degradation that limits the lifetime of planar solid oxide devices systems with metallic interconnects, including Solid Oxide Electrolysis Cells, or SOECs. Some metallic coatings (Ni, Co, and Cu) significantly reduce the Cr release from interconnects and slow down the oxide scale growth on the steel substrate. To shed additional light upon the mechanisms of such protection and find a suitable coating material for ferritic stainless steel materials, we used a combination of first-principles calculations, thermodynamics, and diffusion modeling to investigate which factors determine the quality of the Ni metallic coating at stainless steel interconnector. We found that the Cr migration in Ni coating is determined by a delicate combination of the nickel oxidation, Cr diffusion, and phase transformation processes. Although the formation of Cr2O3 oxide is more exothermic than that of NiO, the kinetic rate of the chromia formation in the coating layer and its surface is significantly reduced by the low mobility of Cr in nickel oxide and in NiCr2O4 spinel. These results are in a good agreement with diffusion modeling for Cr diffusion through Ni coating layer on the ferritic 441 steel substrate.

  13. The Effect Of ZnO Addition On Co/C Catalyst For Vapor And Aqueous Phase Reforming Of Ethanol

    SciTech Connect (OSTI)

    Davidson, Stephen; Sun, Junming; Hong, Yongchun; Karim, Ayman M.; Datye, Abhaya K.; Wang, Yong

    2014-02-05

    The effect of ZnO addition on the oxidation behavior of Co along with catalytic performance in vapor and aqueous phase reforming of ethanol were investigated on Co supported on carbon black (XC-72R). Carbon was selected to minimize the support interactions. Effect of ZnO addition during both vapor and aqueous phase reforming were compared at 250 °C. ZnO addition inhibited the reduction of cobalt oxides by H2 and created surface sites for H2O activation. During vapor phase reforming at 450 °C the redox of cobalt, driven by steam oxidation and H2 reduction, trended to an equilibrium of Co0/Co2+. ZnO showed no significant effect on cobalt oxidation, inferred from the minor changes of C1 product yield. Surface sites created by ZnO addition enhanced water activation and oxidation of surface carbon species, increasing CO2 selectivity. At 250 °C cobalt reduction was minimal, in situ XANES demonstrated that ZnO addition significantly facilitated oxidation of Co0 under vapor phase reforming conditions, demonstrated by lower C1 product yield. Sites introduced by ZnO addition improved the COx selectivity at 250 °C. Both Co/C and Co-ZnO/C rapidly oxidized under aqueous phase reaction conditions at 250 °C, showing negligible activity in aqueous phase reforming. This work suggests that ZnO affects the activation of H2O for Co catalysts in ethanol reforming.

  14. Means and method for vapor generation

    DOE Patents [OSTI]

    Carlson, Larry W. (Oswego, IL)

    1984-01-01

    A liquid, in heat transfer contact with a surface heated to a temperature well above the vaporization temperature of the liquid, will undergo a multiphase (liquid-vapor) transformation from 0% vapor to 100% vapor. During this transition, the temperature driving force or heat flux and the coefficients of heat transfer across the fluid-solid interface, and the vapor percentage influence the type of heating of the fluid--starting as "feedwater" heating where no vapors are present, progressing to "nucleate" heating where vaporization begins and some vapors are present, and concluding with "film" heating where only vapors are present. Unstable heating between nucleate and film heating can occur, accompanied by possibly large and rapid temperature shifts in the structures. This invention provides for injecting into the region of potential unstable heating and proximate the heated surface superheated vapors in sufficient quantities operable to rapidly increase the vapor percentage of the multiphase mixture by perhaps 10-30% and thereby effectively shift the multiphase mixture beyond the unstable heating region and up to the stable film heating region.

  15. Structural, chemical, and electrochemical characteristics of LaSr2Fe2CrO9--based solid oxide fuel cell anodes

    E-Print Network [OSTI]

    Poeppelmeier, Kenneth R.

    -of-the-art solid oxide fuel cell (SOFC) anode is Ni-8-mole% yttria stabilized zirconia (YSZ), which performs very and decreases the efficiency of the SOFC [2]. Ni­YSZ anodes also tend to degrade in fuels containing relatively been reported to provide good SOFC anode performance, providing potential alternatives to Ni

  16. Heats of vaporization of room temperature ionic liquids by tunable vacuum ultraviolet photoionization

    SciTech Connect (OSTI)

    Chambreau, Steven D.; Vaghjiani, Ghanshyam L.; To, Albert; Koh, Christine; Strasser, Daniel; Kostko, Oleg; Leone, Stephen R.

    2009-11-25

    The heats of vaporization of the room temperature ionic liquids (RTILs) N-butyl-N-methylpyrrolidinium bistrifluorosulfonylimide, N-butyl-N-methylpyrrolidinium dicyanamide, and 1-butyl-3-methylimidazolium dicyanamide are determined using a heated effusive vapor source in conjunction with single photon ionization by a tunable vacuum ultraviolet synchrotron source. The relative gas phase ionic liquid vapor densities in the effusive beam are monitored by clearly distinguished dissociative photoionization processes via a time-of-flight mass spectrometer at a tunable vacuum ultraviolet beamline 9.0.2.3 (Chemical Dynamics Beamline) at the Advanced Light Source synchrotron facility. Resulting in relatively few assumptions, through the analysis of both parent cations and fragment cations, the heat of vaporization of N-butyl-N-methylpyrrolidinium bistrifluorosulfonylimide is determined to be Delta Hvap(298.15 K) = 195+-19 kJ mol-1. The observed heats of vaporization of 1-butyl-3-methylimidazolium dicyanamide (Delta Hvap(298.15 K) = 174+-12 kJ mol-1) and N-butyl-N-methylpyrrolidinium dicyanamide (Delta Hvap(298.15 K) = 171+-12 kJ mol-1) are consistent with reported experimental values using electron impact ionization. The tunable vacuum ultraviolet source has enabled accurate measurement of photoion appearance energies. These appearance energies are in good agreement with MP2 calculations for dissociative photoionization of the ion pair. These experimental heats of vaporization, photoion appearance energies, and ab initio calculations corroborate vaporization of these RTILs as intact cation-anion ion pairs.

  17. Optimization of Xenon Difluoride Vapor Delivery

    SciTech Connect (OSTI)

    Sweeney, Joseph; Marganski, Paul; Kaim, Robert; Wodjenski, Mike; Gregg, John; Yedave, Sharad; Sergi, Steve; Bishop, Steve; Eldridge, David; Zou Peng [ATMI, Inc., Danbury, Connecticut 06810 (United States)

    2008-11-03

    Xenon difluoride (XeF{sub 2}) has been shown to provide many process benefits when used as a daily maintenance recipe for ion implant. Regularly flowing XeF{sub 2} into the ion source cleans the deposits generated by ion source operation. As a result, significant increases in productivity have been demonstrated. However, XeF{sub 2} is a toxic oxidizer that must be handled appropriately. Furthermore, it is a low vapor pressure solid under standard conditions ({approx}4.5 torr at 25 deg. C). These aspects present unique challenges for designing a package for delivering the chemistry to an ion implanter. To address these challenges, ATMI designed a high-performance, re-usable cylinder for dispensing XeF{sub 2} in an efficient and reliable manner. Data are presented showing specific attributes of the cylinder, such as the importance of internal heat transfer media and the cylinder valve size. The impact of mass flow controller (MFC) selection and ion source tube design on the flow rate of XeF{sub 2} are also discussed. Finally, cylinder release rate data are provided.

  18. Organic lateral heterojunction devices for vapor-phase chemical detection

    E-Print Network [OSTI]

    Ho, John C., 1980-

    2009-01-01

    As the U.S. is engaged in battle overseas, there is an urgent need for the development of sensors for early warning and protection of military forces against potential attacks. On the battlefields, improvised explosive ...

  19. Micro Chemical Vapor Deposition for the Synthesis of Nanomaterials

    E-Print Network [OSTI]

    Zhou, Qin

    2011-01-01

    including flexible electronics. In the application toet al. , "Flexible nanotube electronics," Nano Letters, vol.Electronics Based on Transfer Printed Aligned Carbon Nanotubes on Rigid and Flexible

  20. Micro Chemical Vapor Deposition for the Synthesis of Nanomaterials

    E-Print Network [OSTI]

    Zhou, Qin

    2011-01-01

    Liwei Lin, Chair MEMS (Microelectromechanical Systems)been demonstrated by MEMS (Microelectromechanical Systems)

  1. Direct chemical vapor deposition of graphene on dielectric surfaces

    DOE Patents [OSTI]

    Zhang, Yuegang; Ismach, Ariel

    2014-04-29

    A substrate is provided that has a metallic layer on a substrate surface of a substrate. A film made of a two dimensional (2-D) material, such as graphene, is deposited on a metallic surface of the metallic layer. The metallic layer is dewet and/or removed to provide the film on the substrate surface.

  2. Atmospheric-Pressure Chemical Vapor Deposition of Iron Pyrite...

    Office of Scientific and Technical Information (OSTI)

    FeSsub 2) is a promising candidate absorber material for earth-abundant thin-film solar cells. In this report, single-phase, large-grain, and uniform polycrystalline pyrite...

  3. Micro Chemical Vapor Deposition for the Synthesis of Nanomaterials

    E-Print Network [OSTI]

    Zhou, Qin

    2011-01-01

    Journal of MicroElectroMechanical Systems, vol. 20, pp. 9-Chair MEMS (Microelectromechanical Systems) technologiesby MEMS (Microelectromechanical Systems) technologies many

  4. Micro Chemical Vapor Deposition for the Synthesis of Nanomaterials

    E-Print Network [OSTI]

    Zhou, Qin

    2011-01-01

    nanotubes on temperature sensitive substrate via µCVD (Chapter 4). (d) Synthesis of graphene with nickel

  5. Micro Chemical Vapor Deposition for the Synthesis of Nanomaterials

    E-Print Network [OSTI]

    Zhou, Qin

    2011-01-01

    Deposition," Journal of MicroElectroMechanical Systems, vol.Chair MEMS (Microelectromechanical Systems) technologiesby MEMS (Microelectromechanical Systems) technologies many

  6. Micro Chemical Vapor Deposition for the Synthesis of Nanomaterials

    E-Print Network [OSTI]

    Zhou, Qin

    2011-01-01

    processes, the gas velocity near the reaction surface isreaction surface, where flow streams with higher velocityhigher velocity are drawn closer to the reaction surface. A

  7. Micro Chemical Vapor Deposition for the Synthesis of Nanomaterials

    E-Print Network [OSTI]

    Zhou, Qin

    2011-01-01

    Therefore a temperature monitoring and control system isthe construction of the temperature monitoring and control28 2.4.2 Temperature Monitoring

  8. Graphene growth with giant domains using chemical vapor deposition

    E-Print Network [OSTI]

    Yong, Virginia; Hahn, H. Thomas

    2011-01-01

    N. Martensson, Controlling graphene corrugation on lattice-in patterned epitaxial graphene, Science, 2006, 312(5777), 92009, 4(6), 17 A. K. Geim, Graphene: Status and Prospects,

  9. Zirconium Nitride Coating Fabrication via Fluidized Bed Chemical Vapor Deposition 

    E-Print Network [OSTI]

    Sudderth, Laura

    2015-04-30

    heated to 60-75 °C. Coatings were qualitatively characterized using energy dispersive X-ray spectroscopy, wavelength dispersive X-ray spectroscopy, and X-ray distribution mapping. Zirconium-based coatings up to 2.2 ± 0.3 ?m thick after 2 days...

  10. Formation of amorphous metal alloys by chemical vapor deposition

    DOE Patents [OSTI]

    Mullendore, A.W.

    1988-03-18

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures of organometallic compounds and metalloid hydrides,e.g., transition metal carbonyl, such as nickel carbonyl and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit. 1 fig.

  11. Formation of amorphous metal alloys by chemical vapor deposition

    DOE Patents [OSTI]

    Mullendore, Arthur W. (Sandia Park, NM)

    1990-01-01

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures or organometallic compounds and metalloid hydrides, e.g., transition metal carbonyl such as nickel carbonyl, and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit.

  12. Hot-Wire Chemical Vapor Deposition (HWCVD) technologies - Energy Innovation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (JournalvivoHigh energyHighlandWorkshop-Summer 2014 HotPortal

  13. Process for recovering organic vapors from air

    DOE Patents [OSTI]

    Baker, Richard W. (Mountain View, CA)

    1985-01-01

    A process for recovering and concentrating organic vapor from a feed stream of air having an organic vapor content of no more than 20,000 ppm by volume. A thin semipermeable membrane is provided which has a feed side and a permeate side, a selectivity for organic vapor over air of at least 50, as measured by the ratio of organic vapor permeability to nitrogen permeability, and a permeability of organic vapor of at least 3.times.10.sup.-7 cm.sup.3 (STP) cm/cm.sup.2 sec.cm Hg. The feed stream is passed across the feed side of the thin semipermeable membrane while providing a pressure on the permeate side which is lower than the feed side by creating a partial vacuum on the permeate side so that organic vapor passes preferentially through the membrane to form an organic vapor depleted air stream on the feed side and an organic vapor enriched stream on the permeate side. The organic vapor which has passed through the membrane is compressed and condensed to recover the vapor as a liquid.

  14. Comparison of secondary organic aerosol formed with an aerosol flow reactor and environmental reaction chambers: effect of oxidant concentration, exposure time and seed particles on chemical composition and yield

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lambe, A. T.; Chhabra, P. S.; Onasch, T. B.; Brune, W. H.; Hunter, J. F.; Kroll, J. H.; Cummings, M. J.; Brogan, J. F.; Parmar, Y.; Worsnop, D. R.; et al

    2014-12-02

    We performed a systematic intercomparison study of the chemistry and yields of SOA generated from OH oxidation of a common set of gas-phase precursors in a Potential Aerosol Mass (PAM) continuous flow reactor and several environmental chambers. In the flow reactor, SOA precursors were oxidized using OH concentrations ranging from 2.0×108 to 2.2×1010 molec cm-3 over exposure times of 100 s. In the environmental chambers, precursors were oxidized using OH concentrations ranging from 2×106 to 2×107 molec cm-3 over exposure times of several hours. The OH concentration in the chamber experiments is close to that found in the atmosphere, butmore »the integrated OH exposure in the flow reactor can simulate atmospheric exposure times of multiple days compared to chamber exposure times of only a day or so. A linear correlation analysis of the mass spectra (m=0.91–0.92, r2=0.93–0.94) and carbon oxidation state (m=1.1, r2=0.58) of SOA produced in the flow reactor and environmental chambers for OH exposures of approximately 1011 molec cm-3 s suggests that the composition of SOA produced in the flow reactor and chambers is the same within experimental accuracy as measured with an aerosol mass spectrometer. This similarity in turn suggests that both in the flow reactor and in chambers, SOA chemical composition at low OH exposure is governed primarily by gas-phase OH oxidation of the precursors, rather than heterogeneous oxidation of the condensed particles. In general, SOA yields measured in the flow reactor are lower than measured in chambers for the range of equivalent OH exposures that can be measured in both the flow reactor and chambers. The influence of sulfate seed particles on isoprene SOA yield measurements was examined in the flow reactor. The studies show that seed particles increase the yield of SOA produced in flow reactors by a factor of 3 to 5 and may also account in part for higher SOA yields obtained in the chambers, where seed particles are routinely used.« less

  15. Vapor Barriers or Vapor Diffusion Retarders | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirley Ann JacksonDepartment of EnergyResearchers at theAugust 1, 2013theEnergyThe1984 StartVapor

  16. Chemically induced Parkinson's disease: intermediates in the oxidation of 1-methyl-4-phenyl-1,2,3,6-tetrahydropyridine to the 1-methyl-4-phenyl-pyridinium ion

    SciTech Connect (OSTI)

    Chacon, J.N.; Chedekel, M.R.; Land, E.J.; Truscott, T.G.

    1987-04-29

    Various unstable intermediate oxidation states have been postulated in the metabolic activation of 1-methyl-4-phenyl-1,2,3,6-tetrahydropyridine to the 1-methyl-4-phenyl pyridinium ion. We now report the first direct observation of these free radical intermediates by pulse radiolysis and flash photolysis. Studies are described of various reactions of such species, in particular with dopamine whose autoxidation to dopamine quinone is reported to be potentiated by 1-methyl-4-phenyl-1,2,3, 6-tetrahydropyridine.

  17. The role of polymer formation during vapor phase lubrication of silicon.

    SciTech Connect (OSTI)

    Dugger, Michael Thomas; Dirk, Shawn M.; Ohlhausen, James Anthony

    2010-10-01

    The lubrication of silicon surfaces with alcohol vapors has recently been demonstrated. With a sufficient concentration of pentanol vapor present, sliding of a silica ball on an oxidized silicon wafer can proceed with no measurable wear. The initial results of time-of-flight secondary ion mass spectrometry (ToF-SIMS) analysis of wear surfaces revealed a reaction product having thickness on the order of a monolayer, and with an ion spectrum that included fragments having molecular weights of 200 or more that occurred only inside the wear tracks. The parent alcohol molecule pentanol, has molecular weight of 88amu, suggesting that reactions of adsorbed alcohols on the wearing surfaces allowed polymerization of the alcohols to form higher molecular weight species. In addition to pin-on-disk studies, lubrication of silicon surfaces with pentanol vapors has also been demonstrated using MicroElectroMechanical Systems (MEMS) devices. Recent investigations of the reaction mechanisms of the alcohol molecules with the oxidized silicon surfaces have shown that wearless sliding requires a concentration of the alcohol vapor that is dependent upon the contact stress during sliding, with higher stress requiring a greater concentration of alcohol. Different vapor precursors including those with acid functionality, olefins, and methyl termination also produce polymeric reaction products, and can lubricate the silica surfaces. Doping the operating environment with oxygen was found to quench the formation of the polymeric reaction product, and demonstrates that polymer formation is not necessary for wearless sliding.

  18. Solution-gated graphene transistors for chemical and biological sensing applications

    E-Print Network [OSTI]

    Mailly, Benjamin

    2013-01-01

    Various fabrication processes were developed in order to make graphene-based chemical and biological sensors on different substrates. Single-layer graphene is grown by chemical vapor deposition and then transferred to ...

  19. Molecules and materials for the optical detection of explosives and toxic chemicals

    E-Print Network [OSTI]

    Thomas, Samuel William, III

    2006-01-01

    Optical chemosensing, especially using amplifying fluorescent polymers, can allow for the highly sensitive and selective vapor-phase detection of both explosives and highly toxic chemicals, including chemical warfare agents. ...

  20. Control of flow through a vapor generator

    DOE Patents [OSTI]

    Radcliff, Thomas D.

    2005-11-08

    In a Rankine cycle system wherein a vapor generator receives heat from exhaust gases, provision is made to avoid overheating of the refrigerant during ORC system shut down while at the same time preventing condensation of those gases within the vapor generator when its temperature drops below a threshold temperature by diverting the flow of hot gases to ambient and to thereby draw ambient air through the vapor generator in the process. In one embodiment, a bistable ejector is adjustable between one position, in which the hot gases flow through the vapor generator, to another position wherein the gases are diverted away from the vapor generator. Another embodiment provides for a fixed valve ejector with a bias towards discharging to ambient, but with a fan on the downstream side of said vapor generator for overcoming this bias.

  1. Mercury Vapor | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource HistoryScenariosMarysville MtMedical Area Total Egy PltMercuriusVapor Jump to:

  2. Coupling apparatus for a metal vapor laser

    DOE Patents [OSTI]

    Ball, D.G.; Miller, J.L.

    1993-02-23

    Coupling apparatus for a large bore metal vapor laser is disclosed. The coupling apparatus provides for coupling high voltage pulses (approximately 40 KV) to a metal vapor laser with a high repetition rate (approximately 5 KHz). The coupling apparatus utilizes existing thyratron circuits and provides suitable power input to a large bore metal vapor laser while maintaining satisfactory operating lifetimes for the existing thyratron circuits.

  3. FLAMMABILITY CHARACTERISTICS OF COMBUSTIBLE GASES AND VAPORS

    Office of Scientific and Technical Information (OSTI)

    give a higher lower limit value than the completely vaporized sample. Conversely, the heavy fractions or residue give a smaller lower limit value. For this reason, there is...

  4. Dosimeter for monitoring vapors and aerosols of organic compounds

    DOE Patents [OSTI]

    Vo-Dinh, T.

    1987-07-14

    A dosimeter is provided for collecting and detecting vapors and aerosols of organic compounds. The dosimeter comprises a lightweight, passive device that can be conveniently worn by a person as a badge or placed at a stationary location. The dosimeter includes a sample collector comprising a porous web treated with a chemical for inducing molecular displacement and enhancing phosphorescence. Compounds are collected onto the web by molecular diffusion. The web also serves as the sample medium for detecting the compounds by a room temperature phosphorescence technique. 7 figs.

  5. Dosimeter for monitoring vapors and aerosols of organic compounds

    DOE Patents [OSTI]

    Vo-Dinh, Tuan (625 Gulfwood Rd., Knoxville, TN 37923)

    1987-01-01

    A dosimeter is provided for collecting and detecting vapors and aerosols of organic compounds. The dosimeter comprises a lightweight, passive device that can be conveniently worn by a person as a badge or placed at a stationary location. The dosimeter includes a sample collector comprising a porous web treated with a chemical for inducing molecular displacement and enhancing phosphorescence. Compounds are collected onto the web by molecular diffusion. The web also serves as the sample medium for detecting the compounds by a room temperature phosphorescence technique.

  6. Near real time vapor detection and enhancement using aerosol adsorption

    DOE Patents [OSTI]

    Novick, V.J.; Johnson, S.A.

    1999-08-03

    A vapor sample detection method is described where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample. 13 figs.

  7. Laboratory Evaluation of In Situ Chemical Oxidation for Groundwater Remediation, Test Area North, Operable Unit 1-07B, Idaho National Engineering and Environmental Laboratory, Volume Two, Appendices C, D, and E

    SciTech Connect (OSTI)

    Cline, S.R.; Denton, D.L.; Giaquinto, J.M.; McCracken, M.K.; Starr, R.C.

    1999-04-01

    These appendices support the results and discussion of the laboratory work performed to evaluate the feasibility of in situ chemical oxidation for Idaho National Environmental and Engineering Laboratory's (INEEL) Test Area North (TAN) which is contained in ORNL/TM-1371 l/Vol. This volume contains Appendices C-E. Appendix C is a compilation of all recorded data and mathematical calculations made to interpret the data. For the Task 3 and Task 4 work, the spreadsheet column definitions are included immediately before the actual spreadsheet pages and are listed as ''Sample Calculations/Column Definitions'' in the table of contents. Appendix D includes the chronological order in which the experiments were conducted and the final project costs through October 1998. Appendix E is a compilation of the monthly progress reports submitted to INEEL during the course of the project.

  8. Program plan for the resolution of tank vapor issues

    SciTech Connect (OSTI)

    Osborne, J.W.; Huckaby, J.L.

    1994-05-01

    Since 1987, workers at the Hanford Site waste tank farms in Richland, Washington, have reported strong odors emanating from the large, underground high-level radioactive waste storage tanks. Some of these workers have complained of symptoms (e.g., headaches, nausea) related to the odors. In 1992, the U.S. Department of Energy, which manages the Hanford Site, and Westinghouse Hanford Company determined that the vapor emissions coming from the tanks had not been adequately characterized and represented a potential health risk to workers in the immediate vicinity of the tanks. At that time, workers in certain areas of the tank farms were required to use full-face, supplied-breathing-air masks to reduce their exposure to the fugitive emissions. While use of supplied breathing air reduced the health risks associated with the fugitive emissions, it introduced other health and safety risks (e.g., reduced field of vision, air-line tripping hazards, and heat stress). In 1992, an aggressive program was established to assure proper worker protection while reducing the use of supplied breathing air. This program focuses on characterization of vapors inside the tanks and industrial hygiene monitoring in the tank farms. If chemical filtration systems for mitigation of fugitive emissions are deemed necessary, the program will also oversee their design and installation. This document presents the plans for and approach to resolving the Hanford Site high-level waste tank vapor concerns. It is sponsored by the Department of Energy Office of Environmental Restoration and Waste Management.

  9. Chemical System Decontamination at PWR Power Stations Biblis A and B by Advanced System Decontamination by Oxidizing Chemistry (ASDOC-D) Process Technology - 13081

    SciTech Connect (OSTI)

    Loeb, Andreas; Runge, Hartmut; Stanke, Dieter; Bertholdt, Horst-Otto; Adams, Andreas; Impertro, Michael; Roesch, Josef

    2013-07-01

    For chemical decontamination of PWR primary systems the so called ASDOC-D process has been developed and qualified at the German PWR power station Biblis. In comparison to other chemical decontamination processes ASDOC-D offers a number of advantages: - ASDOC-D does not require separate process equipment but is completely operated and controlled by the nuclear site installations. Feeding of chemical concentrates into the primary system is done by means of the site's dosing systems. Process control is performed by standard site instrumentation and analytics. - ASDOC-D safely prevents any formation and precipitation of insoluble constituents - Since ASDOC-D is operated without external equipment there is no need for installation of such equipment in high radioactive radiation surrounding. The radioactive exposure rate during process implementation and process performance may therefore be neglected in comparison to other chemical decontamination processes. - ASDOC-D does not require auxiliary hose connections which usually bear high leakage risk. The above mentioned technical advantages of ASDOC-D together with its cost-effectiveness gave rise to Biblis Power station to agree on testing ASDOC-D at the volume control system of PWR Biblis unit A. By involving the licensing authorities as well as expert examiners into this test ASDOC-D received the official qualification for primary system decontamination in German PWR. As a main outcome of the achieved results NIS received contracts for full primary system decontamination of both units Biblis A and B (each 1.200 MW) by end of 2012. (authors)

  10. G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) Value-Added Product

    SciTech Connect (OSTI)

    Koontz, A; Cadeddu, M

    2012-12-05

    The G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) value-added product (VAP) computes precipitable water vapor using neural network techniques from data measured by the GVR. The GVR reports time-series measurements of brightness temperatures for four channels located at 183.3 ± 1, 3, 7, and 14 GHz.

  11. The combustion chemistry of a fuel tracer: Measured flame speeds and ignition delays and a detailed chemical kinetic model for the oxidation of acetone

    SciTech Connect (OSTI)

    Pichon, S.; Black, G.; Simmie, J.M.; Curran, H.J.; Chaumeix, N.; Yahyaoui, M.; Donohue, R.

    2009-02-15

    Acetone ignition delay and stretch-free laminar flame speed measurements have been carried out and a kinetic model has been developed to simulate these and literature data for acetone and for ketene, which was found to be an important intermediate in its oxidation. The mechanism has been based on one originally devised for dimethyl ether and modified through validation of the hydrogen, carbon monoxide and methane sub-mechanisms. Acetone oxidation in argon was studied behind reflected shock waves in the temperature range 1340-1930 K, at 1 atm and at equivalence ratios of 0.5, 1 and 2; it is also shown that the addition of up to 15% acetone to a stoichiometric n-heptane mixture has no effect on the measured ignition delay times. Flame speeds at 298 K and 1 atm of pure acetone in air were measured in a spherical bomb; a maximum flame speed of {proportional_to}35 cm s{sup -1} at {phi}=1.15 is indicated. (author)

  12. High ethylene to ethane processes for oxidative coupling

    DOE Patents [OSTI]

    Chafin, R.B.; Warren, B.K.

    1991-12-17

    Oxidative coupling of lower alkane to higher hydrocarbon is conducted using a catalyst comprising barium and/or strontium component and a metal oxide combustion promoter in the presence of vapor phase halogen component. High ethylene to ethane mole ratios in the product can be obtained over extended operating periods.

  13. High ethylene to ethane processes for oxidative coupling

    DOE Patents [OSTI]

    Chafin, Richard B. (Hurricane, WV); Warren, Barbara K. (Charleston, WV)

    1991-01-01

    Oxidative coupling of lower alkane to higher hydrocarbon is conducted using catalyst comprising barium and/or strontium component and a metal oxide combustion promoter in the presence of vapor phase halogen component. High ethylene to ethane mole ratios in the product can be obtained over extended operating periods.

  14. Observed Increase of TTL Temperature and Water Vapor in Polluted Couds over Asia

    SciTech Connect (OSTI)

    Su, Hui; Jiang, Jonathan; Liu, Xiaohong; Penner, J.; Read, William G.; Massie, Steven T.; Schoeberl, Mark R.; Colarco, Peter; Livesey, Nathaniel J.; Santee, Michelle L.

    2011-06-01

    Aerosols can affect cloud particle size and lifetime, which impacts precipitation, radiation and climate. Previous studies1-4 suggested that reduced ice cloud particle size and fall speed due to the influence of aerosols may increase evaporation of ice crystals and/or cloud radiative heating in the tropical tropopause layer (TTL), leading to higher water vapor abundance in air entering the stratosphere. Observational substantiation of such processes is still lacking. Here, we analyze new observations from multiple NASA satellites to show the imprint of pollution influence on stratospheric water vapor. We focus our analysis on the highly-polluted South and East Asia region during boreal summer. We find that "polluted" ice clouds have smaller ice effective radius than "clean" clouds. In the TTL, the polluted clouds are associated with warmer temperature and higher specific humidity than the clean clouds. The water vapor difference between the polluted and clean clouds cannot be explained by other meteorological factors, such as updraft and detrainment strength. Therefore, the observed higher water vapor entry value into the stratosphere in the polluted clouds than in the clean clouds is likely a manifestation of aerosol pollution influence on stratospheric water vapor. Given the radiative and chemical importance of stratospheric water vapor, the increasing emission of aerosols over Asia may have profound impacts on stratospheric chemistry and global energy balance and water cycle.

  15. Environmental Chemistry at Vapor/Water Interfaces

    E-Print Network [OSTI]

    Environmental Chemistry at Vapor/Water Interfaces: Insights from Vibrational Sum Frequency for manyyearsowingtoitscomplexityandimportanceindescribingawiderange of physical phenomena. The vapor/water interface is particularly interesting from an environmental for these systems is highlighted. A future perspective toward the application of VSFG to the study of environmental

  16. Quantitative organic vapor-particle sampler

    DOE Patents [OSTI]

    Gundel, Lara (Berkeley, CA); Daisey, Joan M. (Walnut Creek, CA); Stevens, Robert K. (Cary, NC)

    1998-01-01

    A quantitative organic vapor-particle sampler for sampling semi-volatile organic gases and particulate components. A semi-volatile organic reversible gas sorbent macroreticular resin agglomerates of randomly packed microspheres with the continuous porous structure of particles ranging in size between 0.05-10 .mu.m for use in an integrated diffusion vapor-particle sampler.

  17. Chemical leukoderma

    E-Print Network [OSTI]

    O'Reilly, Kathryn E; Patel, Utpal; Chu, Julie; Patel, Rishi; Machler, Brian C

    2011-01-01

    the first report, to date, of chemical leukoderma that wasreview on biological, chemical and clinical aspects. Pigment4. Briganti S, et al. Chemical and instrumental approaches

  18. Atomic vapor laser isotope separation

    SciTech Connect (OSTI)

    Stern, R.C.; Paisner, J.A.

    1985-11-08

    Atomic vapor laser isotope separation (AVLIS) is a general and powerful technique. A major present application to the enrichment of uranium for light-water power reactor fuel has been under development for over 10 years. In June 1985 the Department of Energy announced the selection of AVLIS as the technology to meet the nation's future need for the internationally competitive production of uranium separative work. The economic basis for this decision is considered, with an indicated of the constraints placed on the process figures of merit and the process laser system. We then trace an atom through a generic AVLIS separator and give examples of the physical steps encountered, the models used to describe the process physics, the fundamental parameters involved, and the role of diagnostic laser measurements.

  19. Chemical compositions, methods of making the chemical compositions, and structures made from the chemical compositions

    DOE Patents [OSTI]

    Yang, Lei; Cheng, Zhe; Liu, Ze; Liu, Meilin

    2015-01-13

    Embodiments of the present disclosure include chemical compositions, structures, anodes, cathodes, electrolytes for solid oxide fuel cells, solid oxide fuel cells, fuel cells, fuel cell membranes, separation membranes, catalytic membranes, sensors, coatings for electrolytes, electrodes, membranes, and catalysts, and the like, are disclosed.

  20. Glenwood Springs Vapor Caves Pool & Spa Low Temperature Geothermal...

    Open Energy Info (EERE)

    Vapor Caves Pool & Spa Low Temperature Geothermal Facility Jump to: navigation, search Name Glenwood Springs Vapor Caves Pool & Spa Low Temperature Geothermal Facility Facility...

  1. After More Than 20 Years Operating, Hanford's Soil Vapor Extraction...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    After More Than 20 Years Operating, Hanford's Soil Vapor Extraction Project Nears Completion After More Than 20 Years Operating, Hanford's Soil Vapor Extraction Project Nears...

  2. VAPOR PRESSURES OF THE RUBIDIUM FLUORIDE-ZIRCONIUM FLUORIDE AND...

    Office of Scientific and Technical Information (OSTI)

    VAPOR PRESSURES OF THE RUBIDIUM FLUORIDE-ZIRCONIUM FLUORIDE AND LITHIUM FLUORIDE-ZIRCONIUM FLUORIDE SYSTEMS Citation Details In-Document Search Title: VAPOR PRESSURES OF THE...

  3. The role of polymer formation during vapor phase lubrication...

    Office of Scientific and Technical Information (OSTI)

    The role of polymer formation during vapor phase lubrication of silicon. Citation Details In-Document Search Title: The role of polymer formation during vapor phase lubrication of...

  4. Synthesis and Oxidation Behavior of Platinum-Enriched ?+?' Bond Coatings on Ni-Based Superalloys

    SciTech Connect (OSTI)

    Zhang, Ying [Tennessee Technological University; Ballard, D A [Tennessee Technological University; Stacy, J P [Tennessee Technological University; Pint, Bruce A [ORNL; Haynes, James A [ORNL

    2006-01-01

    Simple Pt-enriched {gamma}+{gamma}{prime} coatings were synthesized on Rene 142 and Rene N5 Ni-based superalloys by electroplating a thin layer of Pt followed by a diffusion treatment at 1150-1175 C. The Al content in the resulting {gamma}+{gamma}{prime} coating was in the range of 16-19 at.% on superalloys with 13-14 at.% Al. After oxidation testing, alumina scale adherence to these {gamma}+{gamma}{prime} coatings was not as uniform as to the {beta}-(Ni,Pt)Al coatings on the same superalloy substrates. To better understand the effect of Al, Pt and Hf concentrations on coating oxidation resistance, a number of Ni-Pt-Al cast alloys with {gamma}+{gamma}{prime} or {beta} phase were cyclically oxidized at 1100 C. The Hf-containing {gamma}+{gamma}{prime} alloys with 22 at.% Al and 10-30 at.% Pt exhibited similar oxidation resistance to the {beta} alloys with 50 at.% Al. An initial effort was made to increase the Al content in the Pt-enriched {gamma}+{gamma}{prime} coatings by introducing a short-term aluminizing process via chemical vapor deposition or pack cementation. However, too much Al was deposited, leading to the formation of {beta} or martensitic phase on the coating surface.

  5. Gas Sensors Based on Tin Oxide Nanoparticles Synthesized from a Mini-Arc Plasma Source

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lu, Ganhua; Huebner, Kyle L.; Ocola, Leonidas E.; Gajdardziska-Josifovska, Marija; Chen, Junhong

    2006-01-01

    Miniaturized gas sensors or electronic noses to rapidly detect and differentiate trace amount of chemical agents are extremely attractive. In this paper, we report on the fabrication and characterization of a functional tin oxide nanoparticle gas sensor. Tin oxide nanoparticles are first synthesized using a convenient and low-cost mini-arc plasma source. The nanoparticle size distribution is measured online using a scanning electrical mobility spectrometer (SEMS). The product nanoparticles are analyzed ex-situ by high resolution transmission electron microscopy (HRTEM) for morphology and defects, energy dispersive X-ray (EDX) spectroscopy for elemental composition, electron diffraction for crystal structure, and X-ray photoelectron spectroscopy (XPS)more »for surface composition. Nonagglomerated rutile tin oxide (SnO2) nanoparticles as small as a few nm have been produced. Larger particles bear a core-shell structure with a metallic core and an oxide shell. The nanoparticles are then assembled onto an e-beam lithographically patterned interdigitated electrode using electrostatic force to fabricate the gas sensor. The nanoparticle sensor exhibits a fast response and a good sensitivity when exposed to 100 ppm ethanol vapor in air.« less

  6. BAR-CODE BASED WEIGHT MEASUREMENT STATION FOR PHYSICAL INVENTORY TAKING OF PLUTONIUM OXIDE CONTAINERS AT THE MINING AND CHEMICAL COMBINE RADIOCHEMICAL REPROCESSING PLANT NEAR KRASNOYARSK, SIBERIA.

    SciTech Connect (OSTI)

    SUDA,S.

    1999-09-20

    This paper describes the technical tasks being implemented to computerize the physical inventory taking (PIT) at the Mining and Chemical Combine (Gorno-Khimichesky Kombinat, GKhK) radiochemical plant under the US/Russian cooperative nuclear material protection, control, and accounting (MPC and A) program. Under the MPC and A program, Lab-to-Lab task agreements with GKhK were negotiated that involved computerized equipment for item verification and confirmatory measurement of the Pu containers. Tasks under Phase I cover the work for demonstrating the plan and procedures for carrying out the comparison of the Pu container identification on the container with the computerized inventory records. In addition to the records validation, the verification procedures include the application of bar codes and bar coded TIDs to the Pu containers. Phase II involves the verification of the Pu content. A plan and procedures are being written for carrying out confirmatory measurements on the Pu containers.

  7. Molecular-Flow Properties of RIB Type Vapor-Transport Systems Using a Fast-Valve

    SciTech Connect (OSTI)

    Alton, Gerald D [ORNL] [ORNL; Bilheux, Hassina Z [ORNL] [ORNL; Zhang, Y. [Oak Ridge National Laboratory (ORNL)] [Oak Ridge National Laboratory (ORNL); Liu, Yuan [ORNL] [ORNL

    2014-01-01

    The advent of the fast-valve device, described previously, permits measurement of molecular-flow times of chemically active or inactive gaseous species through radioactive ion beam (RIB) target ion source systems, independent of size, geometry and materials of construction. Thus, decay losses of short-half-life RIBs can be determined for a given target/vapor-transport system in advance of on-line operation, thereby ascertaining the feasibility of the system design for successful processing of a given isotope. In this article, molecular-flow-time theory and experimentally measured molecular-flow time data are given for serial- and parallel-coupled Ta metal RIB vapor-transport systems similar to those used at ISOL based RIB facilities. In addition, the effect of source type on the molecular-flow time properties of a given system is addressed, and a chemical passivation method for negating surface adsorption enthalpies for chemically active gaseous species on Ta surfaces is demonstrated.

  8. Method for producing chemical energy

    DOE Patents [OSTI]

    Jorgensen, Betty S.; Danen, Wayne C.

    2004-09-21

    Fluoroalkylsilane-coated metal particles having a central metal core, a buffer layer surrounding the core, and a fluoroalkylsilane layer attached to the buffer layer are prepared by combining a chemically reactive fluoroalkylsilane compound with an oxide coated metal particle having a hydroxylated surface. The resulting fluoroalkylsilane layer that coats the particles provides them with excellent resistance to aging. The particles can be blended with oxidant particles to form energetic powder that releases chemical energy when the buffer layer is physically disrupted so that the reductant metal core can react with the oxidant.

  9. ZIRCONIUM OXIDE NANOSTRUCTURES PREPARED BY ANODIC OXIDATION

    SciTech Connect (OSTI)

    Dang, Y. Y.; Bhuiyan, M.S.; Paranthaman, M. P.

    2008-01-01

    Zirconium oxide is an advanced ceramic material highly useful for structural and electrical applications because of its high strength, fracture toughness, chemical and thermal stability, and biocompatibility. If highly-ordered porous zirconium oxide membranes can be successfully formed, this will expand its real-world applications, such as further enhancing solid-oxide fuel cell technology. Recent studies have achieved various morphologies of porous zirconium oxide via anodization, but they have yet to create a porous layer where nanoholes are formed in a highly ordered array. In this study, electrochemical methods were used for zirconium oxide synthesis due to its advantages over other coating techniques, and because the thickness and morphology of the ceramic fi lms can be easily tuned by the electrochemical parameters, such as electrolyte solutions and processing conditions, such as pH, voltage, and duration. The effects of additional steps such as pre-annealing and post-annealing were also examined. Results demonstrate the formation of anodic porous zirconium oxide with diverse morphologies, such as sponge-like layers, porous arrays with nanoholes ranging from 40 to 75 nm, and nanotube layers. X-ray powder diffraction analysis indicates a cubic crystallographic structure in the zirconium oxide. It was noted that increased voltage improved the ability of the membrane to stay adhered to the zirconium substrate, whereas lower voltages caused a propensity for the oxide fi lm to fl ake off. Further studies are needed to defi ne the parameters windows that create these morphologies and to investigate other important characteristics such as ionic conductivity.

  10. Recovering hydrocarbons from hydrocarbon-containing vapors

    DOE Patents [OSTI]

    Mirza, Zia I. (La Verne, CA); Knell, Everett W. (Los Alamitos, CA); Winter, Bruce L. (Danville, CA)

    1980-09-30

    Values are recovered from a hydrocarbon-containing vapor by contacting the vapor with quench liquid consisting essentially of hydrocarbons to form a condensate and a vapor residue, the condensate and quench fluid forming a combined liquid stream. The combined liquid stream is mixed with a viscosity-lowering liquid to form a mixed liquid having a viscosity lower than the viscosity of the combined liquid stream to permit easy handling of the combined liquid stream. The quench liquid is a cooled portion of the mixed liquid. Viscosity-lowering liquid is separated from a portion of the mixed liquid and cycled to form additional mixed liquid.

  11. M. Bahrami ENSC 461 (S 11) Chemical Reactions 1 Chemical Reactions

    E-Print Network [OSTI]

    Bahrami, Majid

    M. Bahrami ENSC 461 (S 11) Chemical Reactions 1 Chemical Reactions When analyzing reacting systemsHm. For example octane is C8H18. Combustion: is a chemical reaction during which a fuel is oxidized and a large.28 #12;M. Bahrami ENSC 461 (S 11) Chemical Reactions 2 Where N is the number of moles and M is the molar

  12. Chemical heat pump

    DOE Patents [OSTI]

    Greiner, Leonard (2853-A Hickory Pl., Costa Mesa, CA 92626)

    1984-01-01

    A chemical heat pump system is disclosed for use in heating and cooling structures such as residences or commercial buildings. The system is particularly adapted to utilizing solar energy, but also increases the efficiency of other forms of thermal energy when solar energy is not available. When solar energy is not available for relatively short periods of time, the heat storage capacity of the chemical heat pump is utilized to heat the structure, as during nighttime hours. The design also permits home heating from solar energy when the sun is shining. The entire system may be conveniently rooftop located. In order to facilitate intallation on existing structures, the absorber and vaporizer portions of the system may each be designed as flat, thin wall, thin pan vessels which materially increase the surface area available for heat transfer. In addition, this thin, flat configuration of the absorber and its thin walled (and therefore relatively flexible) construction permits substantial expansion and contraction of the absorber material during vaporization and absorption without generating voids which would interfere with heat transfer.

  13. Chemical heat pump

    DOE Patents [OSTI]

    Greiner, Leonard (2853-A Hickory Pl., Costa Mesa, CA 92626)

    1984-01-01

    A chemical heat pump system is disclosed for use in heating and cooling structures such as residences or commercial buildings. The system is particularly adapted to utilizing solar energy, but also increases the efficiency of other forms of thermal energy when solar energy is not available. When solar energy is not available for relatively short periods of time, the heat storage capacity of the chemical heat pump is utilized to heat the structure, as during nighttime hours. The design also permits home heating from solar energy when the sun is shining. The entire system may be conveniently rooftop located. In order to facilitate installation on existing structures, the absorber and vaporizer portions of the system may each be designed as flat, thin wall, thin pan vessels which materially increase the surface area available for heat transfer. In addition, this thin, flat configuration of the absorber and its thin walled (and therefore relatively flexible) construction permits substantial expansion and contraction of the absorber material during vaporization and absorption without generating voids which would interfere with heat transfer.

  14. Chemical heat pump

    DOE Patents [OSTI]

    Greiner, Leonard (2853-A Hickory Pl., Costa Mesa, CA 92626)

    1984-01-01

    A chemical heat pump system is disclosed for use in heating and cooling structures such as residences or commercial buildings. The system is particularly adapted to utilizing solar energy, but also increases the efficiency of other forms of thermal energy when solar energy is not available. When solar energy is not available for relatively short periods of time, the heat storage capacity of the chemical heat pump is utilized to heat the structure, as during nighttime hours. The design also permits home heating from solar energy when the sun is shining. The entire system may be conveniently rooftop located. In order to faciliate installation on existing structures, the absorber and vaporizer portions of the system may each be designed as flat, thin wall, thin pan vessels which materially increase the surface area available for heat transfer. In addition, this thin, flat configuration of the absorber and its thin walled (and therefore relatively flexible) construction permits substantial expansion and contraction of the absorber material during vaporization and absorption without generating voids which would interfere with heat transfer.

  15. Chemical heat pump

    DOE Patents [OSTI]

    Greiner, Leonard (2853-A Hickory Pl., Costa Mesa, CA 92626)

    1981-01-01

    A chemical heat pump system is disclosed for use in heating and cooling structures such as residences or commercial buildings. The system is particularly adapted to utilizing solar energy, but also increases the efficiency of other forms of thermal energy when solar energy is not available. When solar energy is not available for relatively short periods of time, the heat storage capacity of the chemical heat pump is utilized to heat the structure, as during nighttime hours. The design also permits home heating from solar energy when the sun is shining. The entire system may be conveniently rooftop located. In order to facilitate installation on existing structures, the absorber and vaporizer portions of the system may each be designed as flat, thin wall, thin pan vessels which materially increase the surface area available for heat transfer. In addition, this thin, flat configuration of the absorber and its thin walled (and therefore relatively flexible) construction permits substantial expansion and contraction of the absorber material during vaporization and absorption without generating voids which would interfere with heat transfer.

  16. APPLICATION OF STIR BAR SORPTIVE EXTRACTION TO ANALYSIS OF VOLATILE AND SEMIVOLATILE ORGANIC CHEMICALS OF POTENTIAL CONCERN IN SOLIDS AND AQUEOUS SAMPLES FROM THE HANFORD SITE

    SciTech Connect (OSTI)

    FRYE JM; KUNKEL JM

    2009-03-05

    Stir bar sorptive extraction was applied to aqueous and solid samples for the extraction and analysis of organic compounds from the Hanford chemicals of potential concern list, as identified in the vapor data quality objectives. The 222-S Laboratory analyzed these compounds from vapor samples on thermal desorption tubes as part of the Hanford Site industrial hygiene vapor sampling effort.

  17. A simple grand canonical approach to compute the vapor pressure of bulk and finite size systems

    SciTech Connect (OSTI)

    Factorovich, Matías H.; Scherlis, Damián A.

    2014-02-14

    In this article we introduce a simple grand canonical screening (GCS) approach to accurately compute vapor pressures from molecular dynamics or Monte Carlo simulations. This procedure entails a screening of chemical potentials using a conventional grand canonical scheme, and therefore it is straightforward to implement for any kind of interface. The scheme is validated against data obtained from Gibbs ensemble simulations for water and argon. Then, it is applied to obtain the vapor pressure of the coarse-grained mW water model, and it is shown that the computed value is in excellent accord with the one formally deduced using statistical thermodynamics arguments. Finally, this methodology is used to calculate the vapor pressure of a water nanodroplet of 94 molecules. Interestingly, the result is in perfect agreement with the one predicted by the Kelvin equation for a homogeneous droplet of that size.

  18. The EPRI Laboratory experiments at ANL. [Vaporization of core-concrete mixtures

    SciTech Connect (OSTI)

    Roche, M.F.; Settle, J.L.; Leibowitz, L.; Johnson, C.E.; Ritzman, R.L.

    1987-10-28

    The vaporization of core-concrete mixtures is being measured using a transpiration method. Mixtures of stainless steel, concrete (limestone or basaltic) and urania (doped with La/sub 2/O/sub 3/, SrO, BaO, and ZrO/sub 2/) are vaporized at 2150 - 2400 K from a zirconia crucible into flowing He - 6% H/sub 2/ gas. Up to 600 ppM H/sub 2/O is added to the gas to fix the partial molar free energy of oxygen in the range -420 kJ to -550 kJ. The fraction of the sample that is vaporized is determined by weight change and by chemical analyses on the condensates that are collected in an Mo condenser tube. The results are being used to test the thermodynemic data base and the underlying assumptions of computer codes used for prediction of release during the severe accident. 13 refs., 2 tabs.

  19. Modeling of LNG Pool Spreading and Vaporization 

    E-Print Network [OSTI]

    Basha, Omar 1988-

    2012-11-20

    In this work, a source term model for estimating the rate of spreading and vaporization of LNG on land and sea is introduced. The model takes into account the composition changes of the boiling mixture, the varying thermodynamic properties due...

  20. An advanced vapor-compression desalination system 

    E-Print Network [OSTI]

    Lara Ruiz, Jorge Horacio Juan

    2006-04-12

    Currently, the two dominant desalination methods are reverse osmosis (RO) and multi-stage flash (MSF). RO requires large capital investment and maintenance, whereas MSF is too energy intensive. An innovative vapor-compression desalination system...

  1. Vapor Retarder Classification - Building America Top Innovation...

    Broader source: Energy.gov (indexed) [DOE]

    vapor retarder classification. Air-tight and well-insulated homes have little or no tolerance for drying if they get wet; moisture control is critical. This Top Innovation profile...

  2. Solid oxide electrochemical cell fabrication process

    DOE Patents [OSTI]

    Dollard, Walter J. (Churchill Borough, PA); Folser, George R. (Lower Burrell, PA); Pal, Uday B. (Cambridge, MA); Singhal, Subhash C. (Murrysville, PA)

    1992-01-01

    A method to form an electrochemical cell (12) is characterized by the steps of thermal spraying stabilized zirconia over a doped lanthanum manganite air electrode tube (14) to provide an electrolyte layer (15), coating conductive particles over the electrolyte, pressurizing the outside of the electrolyte layer, feeding halide vapors of yttrium and zirconium to the outside of the electrolyte layer and feeding a source of oxygen to the inside of the electrolyte layer, heating to cause oxygen reaction with the halide vapors to close electrolyte pores if there are any and to form a metal oxide coating on and between the particles and provide a fuel electrode (16).

  3. Optical monitor for water vapor concentration

    DOE Patents [OSTI]

    Kebabian, Paul (Acton, MA)

    1998-01-01

    A system for measuring and monitoring water vapor concentration in a sample uses as a light source an argon discharge lamp, which inherently emits light with a spectral line that is close to a water vapor absorption line. In a preferred embodiment, the argon line is split by a magnetic field parallel to the direction of light propagation from the lamp into sets of components of downshifted and upshifted frequencies of approximately 1575 Gauss. The downshifted components are centered on a water vapor absorption line and are thus readily absorbed by water vapor in the sample; the upshifted components are moved away from that absorption line and are minimally absorbed. A polarization modulator alternately selects the upshifted components or downshifted components and passes the selected components to the sample. After transmission through the sample, the transmitted intensity of a component of the argon line varies as a result of absorption by the water vapor. The system then determines the concentration of water vapor in the sample based on differences in the transmitted intensity between the two sets of components. In alternative embodiments alternate selection of sets of components is achieved by selectively reversing the polarity of the magnetic field or by selectively supplying the magnetic field to the emitting plasma.

  4. Optical monitor for water vapor concentration

    DOE Patents [OSTI]

    Kebabian, P.

    1998-06-02

    A system for measuring and monitoring water vapor concentration in a sample uses as a light source an argon discharge lamp, which inherently emits light with a spectral line that is close to a water vapor absorption line. In a preferred embodiment, the argon line is split by a magnetic field parallel to the direction of light propagation from the lamp into sets of components of downshifted and upshifted frequencies of approximately 1575 Gauss. The downshifted components are centered on a water vapor absorption line and are thus readily absorbed by water vapor in the sample; the upshifted components are moved away from that absorption line and are minimally absorbed. A polarization modulator alternately selects the upshifted components or downshifted components and passes the selected components to the sample. After transmission through the sample, the transmitted intensity of a component of the argon line varies as a result of absorption by the water vapor. The system then determines the concentration of water vapor in the sample based on differences in the transmitted intensity between the two sets of components. In alternative embodiments alternate selection of sets of components is achieved by selectively reversing the polarity of the magnetic field or by selectively supplying the magnetic field to the emitting plasma. 5 figs.

  5. High sensitive formaldehyde graphene gas sensor modified by atomic layer deposition zinc oxide films

    SciTech Connect (OSTI)

    Mu, Haichuan; Zhang, Zhiqiang; Wang, Keke; Xie, Haifen, E-mail: hfxie@ecust.edu.cn [Department of Physics, School of Science, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237 (China); Zhao, Xiaojing; Liu, Feng [Department of Physics, Shanghai Normal University, 100 Guilin Road, Shanghai 200234 (China)

    2014-07-21

    Zinc oxide (ZnO) thin films with various thicknesses were fabricated by Atomic Layer Deposition on Chemical Vapor Deposition grown graphene films and their response to formaldehyde has been investigated. It was found that 0.5?nm ZnO films modified graphene sensors showed high response to formaldehyde with the resistance change up to 52% at the concentration of 9 parts-per-million (ppm) at room temperature. Meanwhile, the detection limit could reach 180 parts-per-billion (ppb) and fast response of 36?s was also obtained. The high sensitivity could be attributed to the combining effect from the highly reactive, top mounted ZnO thin films, and high conductive graphene base network. The dependence of ZnO films surface morphology and its sensitivity on the ZnO films thickness was also investigated.

  6. M. Bahrami ENSC 461 (S 11) Gas Vapor Mixtures and HVAC 1 Gas Vapor Mixtures and HVAC

    E-Print Network [OSTI]

    Bahrami, Majid

    to the vapor pressure: Tdp = Tsat@ Pv Sling Psychrometer: a rotating set of thermometers one of which measuresM. Bahrami ENSC 461 (S 11) Gas Vapor Mixtures and HVAC 1 Gas Vapor Mixtures and HVAC Atmospheric air normally contains some water vapor (moisture). The dry-air contains no water. Although the amount

  7. Manganese porphyrin multilayer films assembled on ITO electrodes via zirconium phosphonate chemistry: chemical and electrochemical

    E-Print Network [OSTI]

    chemistry: chemical and electrochemical catalytic oxidation activity So-Hye Cho, SonBinh T. Nguyen of 1.20 V. The electrochemically generated active intermediate exhibited oxidative catalytic activity; styrene epoxidation; supported catalysts; carbamazepine; electrochemical catalytic oxidation. 1

  8. Hypothetical Thermodynamic Properties. Subcooled Vaporization Enthalpies and Vapor Pressures of Polyaromatic Hydrocarbons

    E-Print Network [OSTI]

    Chickos, James S.

    of a thermochemical cycle, and agreement is within the combined experimental uncertainties. Vapor pressures pressures. Vaporization enthalpies of crystalline materials are also quite useful. Combined with fusion combined with fusion enthalpies have been used to provide independent confirmation of the magnitude

  9. The Homogeneus Forcing of Mercury Oxidation to provide Low-Cost Capture

    SciTech Connect (OSTI)

    John Kramlich; Linda Castiglone

    2007-06-30

    Trace amounts of mercury are found in all coals. During combustion, or during thermal treatment in advanced coal processes, this mercury is vaporized and can be released to the atmosphere with the ultimate combustion products. This has been a cause for concern for a number of years, and has resulted in a determination by the EPA to regulate and control these emissions. Present technology does not, however, provide inexpensive ways to capture or remove mercury. Mercury that exits the furnace in the oxidized form (HgCl{sub 2}) is known to much more easily captured in existing pollution control equipment (e.g., wet scrubbers for SO{sub 2}), principally due to its high solubility in water. Work funded by DOE has helped understand the chemical kinetic processes that lead to mercury oxidation in furnaces. The scenario is as follows. In the flame the mercury is quantitatively vaporized as elemental mercury. Also, the chlorine in the fuel is released as HCl. The direct reaction Hg+HCl is, however, far too slow to be of practical consequence in oxidation. The high temperature region does supports a small concentration of atomic chlorine. As the gases cool (either in the furnace convective passes, in the quench prior to cold gas cleanup, or within a sample probe), the decay in Cl atom is constrained by the slowness of the principal recombination reaction, Cl+Cl+M{yields}Cl{sub 2}+M. This allows chlorine atom to hold a temporary, local superequilibrium concentration . Once the gases drop below about 550 C, the mercury equilibrium shifts to favor HgCl{sub 2} over Hg, and this superequilibrium chlorine atom promotes oxidation via the fast reactions Hg+Cl+M{yields}HgCl+M, HgCl+Cl+M{yields}HgCl{sub 2}+M, and HgCl+Cl{sub 2}{yields}HgCl{sub 2}+Cl. Thus, the high temperature region provides the Cl needed for the reaction, while the quench region allows the Cl to persist and oxidize the mercury in the absence of decomposition reactions that would destroy the HgCl{sub 2}. Promoting mercury oxidation is one means of getting moderate-efficiency, 'free' mercury capture when wet gas cleanup systems are already in place. The chemical kinetic model we developed to describe the oxidation process suggests that in fuel lean gases, the introduction of trace amounts of H{sub 2} within the quench region leads to higher Cl concentrations via chain branching. The amount of additive, and the temperature at the addition point are critical. We investigated this process in a high-temperature quartz flow reactor. The results do indicate a substantial amount of promotion of oxidation with the introduction of relatively small amounts of hydrogen at around 1000 K ({approx}100 ppm relative to the furnace gas). In practical systems the source of this hydrogen is likely to be a small natural gas steam reformer. This would also produce CO, so co-injection of CO was also tested. The CO did not provide any additional promotion, and in some cases led to a reduction in oxidation. We also examined the influence of NO and SO{sub 2} on the promotion process. We did not see any influence under the conditions examined. The present results were for a 0.5 s, isothermal plug flow environment. The next step should be to determine the appropriate injection point for the hydrogen and the performance under realistic temperature quench conditions. This could be accomplished first by chemical kinetic modeling, and then by tunnel flow experiment.

  10. Hypothetical Thermodynamic Properties: Vapor Pressures and Vaporization Enthalpies of the Even n-Alkanes from C40 to C76 at T ) 298.15 K by

    E-Print Network [OSTI]

    Chickos, James S.

    Hypothetical Thermodynamic Properties: Vapor Pressures and Vaporization Enthalpies of the Even n in combination with earlier work to evaluate the vaporization enthalpies and vapor pressures of these n-alkanes from T ) (298.15 to 540) K. The vapor pressure and vaporization enthalpy results obtained are compared

  11. Vapor Pressures and Vaporization Enthalpies of the n-Alkanes from C31 to C38 at T ) 298.15 K by Correlation Gas Chromatography

    E-Print Network [OSTI]

    Chickos, James S.

    Vapor Pressures and Vaporization Enthalpies of the n-Alkanes from C31 to C38 at T ) 298.15 K with other literature values to evaluate the vaporization enthalpies and vapor pressures of these n-alkanes from T ) 298.15 to 575 K. The vapor pressure and vaporization enthalpy results obtained are compared

  12. Vapor Pressures and Vaporization Enthalpies of the n-Alkanes from C21 to C30 at T ) 298.15 K by Correlation Gas Chromatography

    E-Print Network [OSTI]

    Chickos, James S.

    Vapor Pressures and Vaporization Enthalpies of the n-Alkanes from C21 to C30 at T ) 298.15 K pressures of these n-alkanes from T ) 298.15 to 575 K. The vapor pressure and vaporization enthalpy results-alkanes exhibit very low vapor pressures at ambient temperatures, vapor pressure measurement for most

  13. Tribology Letters Vol. 10, No. 3, 2001 179 Activation of the SiC surface for vapor phase lubrication

    E-Print Network [OSTI]

    Gellman, Andrew J.

    Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, USA E-mail: ag4b(ad), which then decompose by -hydride elimination resulting in H2, CO, H2CO, and CH3OH desorption phase lubrication in high temperature engines. KEY WORDS: lubrication; vapor phase lubrication; SiC; Fe

  14. ITP Chemicals: Final Report: Evaluation of Alternative Technologies...

    Energy Savers [EERE]

    Ammonia, and Terephthalic Acid, December 2007 ITP Chemicals: Final Report: Evaluation of Alternative Technologies for Ethylene, Caustic-Chlorine, Ethylene Oxide, Ammonia, and...

  15. Chemically assisted mechanical refrigeration process

    DOE Patents [OSTI]

    Vobach, A.R.

    1987-11-24

    There is provided a chemically assisted mechanical refrigeration process including the steps of: mechanically compressing a refrigerant stream which includes vaporized refrigerant; contacting the refrigerant with a solvent in a mixer at a pressure sufficient to promote substantial dissolving of the refrigerant in the solvent in the mixer to form a refrigerant-solvent solution while concurrently placing the solution in heat exchange relation with a working medium to transfer energy to the working medium, said refrigerant-solvent solution exhibiting a negative deviation from Raoult's Law; reducing the pressure over the refrigerant-solvent solution in an evaporator to allow the refrigerant to vaporize and substantially separate from the solvent while concurrently placing the evolving refrigerant-solvent solution in heat exchange relation with a working medium to remove energy from the working medium to thereby form a refrigerant stream and a solvent stream; and passing the solvent and refrigerant stream from the evaporator. 5 figs.

  16. Chemically assisted mechanical refrigeration process

    DOE Patents [OSTI]

    Vobach, A.R.

    1987-06-23

    There is provided a chemically assisted mechanical refrigeration process including the steps of: mechanically compressing a refrigerant stream which includes vaporized refrigerant; contacting the refrigerant with a solvent in a mixer at a pressure sufficient to promote substantial dissolving of the refrigerant in the solvent in the mixer to form a refrigerant-solvent solution while concurrently placing the solution in heat exchange relation with a working medium to transfer energy to the working medium, said refrigerant-solvent solution exhibiting a negative deviation from Raoult's Law; reducing the pressure over the refrigerant-solvent solution in an evaporator to allow the refrigerant to vaporize and substantially separate from the solvent while concurrently placing the evolving refrigerant-solvent solution in heat exchange relation with a working medium to remove energy from the working medium to thereby form a refrigerant stream and a solvent stream; and passing the solvent and refrigerant stream from the evaporator. 5 figs.

  17. Chemically assisted mechanical refrigeration process

    DOE Patents [OSTI]

    Vobach, Arnold R. (6006 Allentown Dr., Spring, TX 77379)

    1987-01-01

    There is provided a chemically assisted mechanical refrigeration process including the steps of: mechanically compressing a refrigerant stream which includes vaporized refrigerant; contacting the refrigerant with a solvent in a mixer (11) at a pressure sufficient to promote substantial dissolving of the refrigerant in the solvent in the mixer (11) to form a refrigerant-solvent solution while concurrently placing the solution in heat exchange relation with a working medium to transfer energy to the working medium, said refrigerant-solvent solution exhibiting a negative deviation from Raoult's Law; reducing the pressure over the refrigerant-solvent solution in an evaporator (10) to allow the refrigerant to vaporize and substantially separate from the solvent while concurrently placing he evolving refrigerant-solvent solution in heat exchange relation with a working medium to remove energy from the working medium to thereby form a refrigerant stream and a solvent stream; and passing the solvent and refrigerant stream from the evaporator.

  18. Chemically assisted mechanical refrigeration process

    DOE Patents [OSTI]

    Vobach, Arnold R. (6006 Allentown Dr., Spring, TX 77389)

    1987-01-01

    There is provided a chemically assisted mechanical refrigeration process including the steps of: mechanically compressing a refrigerant stream which includes vaporized refrigerant; contacting the refrigerant with a solvent in a mixer (11) at a pressure sufficient to promote substantial dissolving of the refrigerant in the solvent in the mixer (11) to form a refrigerant-solvent solution while concurrently placing the solution in heat exchange relation with a working medium to transfer energy to the working medium, said refrigerant-solvent solution exhibiting a negative deviation from Raoult's Law; reducing the pressure over the refrigerant-solvent solution in an evaporator (10) to allow the refrigerant to vaporize and substantially separate from the solvent while concurrently placing the evolving refrigerant-solvent solution in heat exchange relation with a working medium to remove energy from the working medium to thereby form a refrigerant stream and a solvent stream; and passing the solvent and refrigerant stream from the evaporator.

  19. Method and Apparatus for Concentrating Vapors for Analysis

    DOE Patents [OSTI]

    Grate, Jay W. (West Richland, WA); Baldwin, David L. (Kennewick, WA); Anheier, Jr., Norman C. (Richland, WA)

    2008-10-07

    An apparatus and method are disclosed for pre-concentrating gaseous vapors for analysis. The invention finds application in conjunction with, e.g., analytical instruments where low detection limits for gaseous vapors are desirable. Vapors sorbed and concentrated within the bed of the apparatus can be thermally desorbed achieving at least partial separation of vapor mixtures. The apparatus is suitable, e.g., for preconcentration and sample injection, and provides greater resolution of peaks for vapors within vapor mixtures, yielding detection levels that are 10-10,000 times better than for direct sampling and analysis systems. Features are particularly useful for continuous unattended monitoring applications.

  20. Utilization of toxic and vapors as alternate electron acceptors in biofilters

    SciTech Connect (OSTI)

    Lee, B.D.; Apel, W.A.; Walton, M.R.

    1997-08-01

    Conceptually, biofilters are vapor phase bioreactors that rely on microorganisms in the bed medium to oxidize contaminants in off-gases flowing through the bed to less hazardous compounds. In the most studied and utilized systems reduced compounds such as fuel hydrocarbons are enzymatically oxidized to compounds such as carbon dioxide and water. In these types of reactions the microorganisms in the bed oxidize the contaminant and transfer the electrons to oxygen which is the terminal electron acceptor in the process. In essence the contaminant is the carbon and energy source for the microorganisms in the bed medium and through this catabolic process oxygen is reduced to water. An example of this oxidation process can be seen during the degradation of benzene and similar aromatic compounds. Aromatics are initially attacked by a dioxygenase enzyme which oxidizes the compounds to a labile dihydrodiole which is spontaneously converted to a catechol. The dihydroxylated aromatic rings is then opened by oxidative {open_quotes}ortho{close_quotes} or {open_quotes}meta{close_quotes} cleavage yielding cis, cis-muconic acid or 2-hydroxy-cis, cis-muconic semialdehyde, respectively. These organic compounds are further oxidized to carbon dioxide or are assimilated for cellular material. This paper describes the conversion of carbon tetrachloride using methanol as the primary carbon and energy source.

  1. Diode pumped alkali vapor fiber laser

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Beach, Raymond J. (Livermore, CA); Dawson, Jay W. (Livermore, CA); Krupke, William F. (Pleasanton, CA)

    2006-07-26

    A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

  2. Diode pumped alkali vapor fiber laser

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Beach, Raymond J. (Livermore, CA); Dawson, Jay W. (Livermore, CA); Krupke, William F. (Pleasanton, CA)

    2007-10-23

    A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

  3. Thermal electric vapor trap arrangement and method

    DOE Patents [OSTI]

    Alger, T.

    1988-03-15

    A technique for trapping vapor within a section of a tube is disclosed herein. This technique utilizes a conventional, readily providable thermal electric device having a hot side and a cold side and means for powering the device to accomplish this. The cold side of this device is positioned sufficiently close to a predetermined section of the tube and is made sufficiently cold so that any condensable vapor passing through the predetermined tube section is condensed and trapped, preferably within the predetermined tube section itself. 4 figs.

  4. Advanced Organic Vapor Cycles for Improving Thermal Conversion Efficiency in Renewable Energy Systems

    E-Print Network [OSTI]

    Ho, Tony

    2012-01-01

    pressure and entropy, pressure and vapor quality, andfluid at the high pressure vapor turbine exit. In the nexthigh pressure and low pressure vapor turbines. The increase

  5. THE KINETICS OF LASER PULSE VAPORIZATION OF URANIUM DIOXIDE BY MASS SPECTROMETRY

    E-Print Network [OSTI]

    Tsai, Chuen-horng

    2012-01-01

    resulting low vapor pressure and low heat of vaporizationresulting low vapor pressure and low heat of vaporizationyields the partial vapor pressure and the composition in the

  6. Fabrication of optical structures using SU-8 photoresist and chemically assisted ion beam

    E-Print Network [OSTI]

    Fainman, Yeshaiahu

    transferred into an chemical vapor deposition CVD grown SiO2 layer, evaporated or electroplated metal layers in a SU-8 layer spin coated onto the surface of GaAs substrate is performed using a contact print

  7. A FIRST ORDER PROJECTION-BASED TIME-SPLITTING SCHEME FOR COMPUTING CHEMICALLY REACTING FLOWS

    E-Print Network [OSTI]

    A FIRST ORDER PROJECTION-BASED TIME-SPLITTING SCHEME FOR COMPUTING CHEMICALLY REACTING FLOWS, surface catalytic reactors for methane to methanol conversion and chemical vapor deposition (CVD) process ANDREAS PROHL1 Abstract. The simulation of chemically reacting ows in speci#12;c situations is a basic

  8. A FIRST ORDER PROJECTIONBASED TIMESPLITTING SCHEME FOR COMPUTING CHEMICALLY REACTING FLOWS

    E-Print Network [OSTI]

    A FIRST ORDER PROJECTION­BASED TIME­SPLITTING SCHEME FOR COMPUTING CHEMICALLY REACTING FLOWS catalytic reactors for methane to methanol conversion and chemical vapor deposition (CVD) process modeling ANDREAS PROHL 1 Abstract. The simulation of chemically reacting flows in specific situations is a basic

  9. Distribution of binding energies of a water molecule in the water liquid-vapor interface

    SciTech Connect (OSTI)

    Chempath, Shaji [Los Alamos National Laboratory; Pratt, Lawrence R [TULANE UNIV

    2008-01-01

    Distributions of binding energies of a water molecule in the water liquid-vapor interface are obtained on the basis of molecular simulation with the SPC/E model of water. These binding energies together with the observed interfacial density profile are used to test a minimally conditioned Gaussian quasi-chemical statistical thermodynamic theory. Binding energy distributions for water molecules in that interfacial region clearly exhibit a composite structure. A minimally conditioned Gaussian quasi-chemical model that is accurate for the free energy of bulk liquid water breaks down for water molecules in the liquid-vapor interfacial region. This breakdown is associated with the fact that this minimally conditioned Gaussian model would be inaccurate for the statistical thermodynamics of a dilute gas. Aggressive conditioning greatly improves the performance of that Gaussian quasi-chemical model. The analogy between the Gaussian quasi-chemical model and dielectric models of hydration free energies suggests that naive dielectric models without the conditioning features of quasi-chemical theory will be unreliable for these interfacial problems. Multi-Gaussian models that address the composite nature of the binding energy distributions observed in the interfacial region might provide a mechanism for correcting dielectric models for practical applications.

  10. Chemical heat pump

    DOE Patents [OSTI]

    Greiner, Leonard (2750-C Segerstrom Ave., Santa Ana, CA 92704)

    1980-01-01

    A chemical heat pump system is disclosed for use in heating and cooling structures such as residences or commercial buildings. The system is particularly adapted to utilizing solar energy, but also increases the efficiency of other forms of thermal energy when solar energy is not available. When solar energy is not available for relatively short periods of time, the heat storage capacity of the chemical heat pump is utilized to heat the structure as during nighttime hours. The design also permits home heating from solar energy when the sun is shining. The entire system may be conveniently rooftop located. In order to facilitate installation on existing structures, the absorber and vaporizer portions of the system may each be designed as flat, thin wall, thin pan vessels which materially increase the surface area available for heat transfer. In addition, this thin, flat configuration of the absorber and its thin walled (and therefore relatively flexible) construction permits substantial expansion and contraction of the absorber material during vaporization and absorption without generating voids which would interfere with heat transfer. The heat pump part of the system heats or cools a house or other structure through a combination of evaporation and absorption or, conversely, condensation and desorption, in a pair of containers. A set of automatic controls change the system for operation during winter and summer months and for daytime and nighttime operation to satisfactorily heat and cool a house during an entire year. The absorber chamber is subjected to solar heating during regeneration cycles and is covered by one or more layers of glass or other transparent material. Daytime home air used for heating the home is passed at appropriate flow rates between the absorber container and the first transparent cover layer in heat transfer relationship in a manner that greatly reduce eddies and resultant heat loss from the absorbant surface to ambient atmosphere.

  11. Catalytic oxidizers and Title V requirements

    SciTech Connect (OSTI)

    Uberoi, M.; Rach, S.E.

    1999-07-01

    Catalytic oxidizers have been used to reduce VOC emissions from various industries including printing, chemical, paint, coatings, etc. A catalytic oxidizer uses a catalyst to reduce the operating temperature for combustion to approximately 600 F, which is substantially lower than thermal oxidation unit. Title V requirements have renewed the debate on the best methods to assure compliance of catalytic oxidizers, with some suggesting the need for continuous emission monitoring equipment. This paper will discuss the various aspects of catalytic oxidation and consider options such as monitoring inlet/outlet temperatures, delta T across the catalyst, periodic laboratory testing of catalyst samples, and preventive maintenance procedures as means of assuring continuous compliance.

  12. Advancing Explosives Detection Capabilities: Vapor Detection

    SciTech Connect (OSTI)

    Atkinson, David

    2012-10-15

    A new, PNNL-developed method provides direct, real-time detection of trace amounts of explosives such as RDX, PETN and C-4. The method selectively ionizes a sample before passing the sample through a mass spectrometer to detect explosive vapors. The method could be used at airports to improve aviation security.

  13. Advancing Explosives Detection Capabilities: Vapor Detection

    ScienceCinema (OSTI)

    Atkinson, David

    2014-07-24

    A new, PNNL-developed method provides direct, real-time detection of trace amounts of explosives such as RDX, PETN and C-4. The method selectively ionizes a sample before passing the sample through a mass spectrometer to detect explosive vapors. The method could be used at airports to improve aviation security.

  14. The Effect of vapor subcooling on film condensation of metals

    E-Print Network [OSTI]

    Fedorovich, Eugene D.

    1968-01-01

    This work presents an analysis of the interfacial "vapor-condensate" temperature distribution, which includes the effect of subcooling (supersaturation) in the vapor. Experimental data from previous investigators for ...

  15. Vapor intrusion modeling : limitations, improvements, and value of information analyses

    E-Print Network [OSTI]

    Friscia, Jessica M. (Jessica Marie)

    2014-01-01

    Vapor intrusion is the migration of volatile organic compounds (VOCs) from a subsurface source into the indoor air of an overlying building. Vapor intrusion models, including the Johnson and Ettinger (J&E) model, can be ...

  16. Type B Accident Investigation of the Acid Vapor Inhalation on...

    Energy Savers [EERE]

    of the Acid Vapor Inhalation on June 7, 2005, in TA-48, Building RC-1 Room 402 at the Los Alamos National Laboratory Type B Accident Investigation of the Acid Vapor Inhalation on...

  17. Moisture Durability of Vapor Permeable Insulating Sheathing (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-10-01

    In this project, Building America team Building Science Corporation researched some of the ramifications of using exterior, vapor permeable insulation on retrofit walls with vapor permeable cavity insulation. Retrofit strategies are a key factor in reducing exterior building stock consumption.

  18. MULTIPLY STRIPPED ION GENERATION IN THE METAL VAPOR VACUUM ARC

    E-Print Network [OSTI]

    Brown, I.G.

    2010-01-01

    the metal vapor vacuum arc plasma discharge. A new kind offrom a metal vapor vacuum arc plasma has been used to obtaindrives the vacuum arc plasma is created. The fundamental

  19. OPTIMIZATION OF INJECTION INTO VAPOR-DOMINATED GEOTHERMAL

    E-Print Network [OSTI]

    Stanford University

    OPTIMIZATION OF INJECTION INTO VAPOR-DOMINATED GEOTHERMAL RESERVOIRS CONSIDERING ADSORPTION governing the behavior of vapor- dominated geothermal reservoirs. These mechanisms affect both was to determine the most effective injection strategy once these two effects are considered. Geothermal reservoir

  20. Mechanical Properties of Monolayer Graphene Oxide

    E-Print Network [OSTI]

    for high-temperature process- ing,22 in electrical energy storage systems,23,24 and as discussed in several on silicon carbide,9,10 chemical reduction of graphene oxide (G O) in colloidal suspension,11 13 and plasma

  1. Heat Recovery in Distillation by Mechanical Vapor Recompression 

    E-Print Network [OSTI]

    Becker, F. E.; Zakak, A. I.

    1986-01-01

    IN DISTILLATION BY MECHANICAL VAPOR RECOMPRESSION Frederick E. Becker and Alexandra I. Zakak Tecogen, Inc., A Subsidiary of Thermo Electron Corporation Waltham, Massachusetts ABSTRACT A significant reduction in distillation tower energy requirements can..., and then recompressing the low-pressure bottom vapors and injecting them directly into the column bottom. The choice of either scheme is a function of the physical properties of the vapors; i.e., the specific volume of the top or bottom vapors may dictate the most...

  2. Chemical technology division: Annual technical report 1987

    SciTech Connect (OSTI)

    Not Available

    1988-05-01

    Highlights of the Chemical Technology (CMT) Division's activities during 1987 are presented. In this period, CMT conducted research and development in the following areas: (1) high-performance batteries--mainly lithium-alloy/metal sulfide and sodium/sulfur; (2) aqueous batteries (lead-acid, nickel/iron, etc.); (3) advanced fuel cells with molten carbonate or solid oxide electrolytes; (4) coal utilization, including the heat and seed recovery technology for coal-fired magnetohydrodynamics plants and the technology for fluidized-bed combustion; (5) methods for the electromagnetic continuous casting of steel sheet and for the purification of ferrous scrap; (6) methods for recovery of energy from municipal waste and techniques for treatment of hazardous organic waste; (7) nuclear technology related to a process for separating and recovering transuranic elements from nuclear waste, the recovery processes for discharged fuel and the uranium blanket in a sodium-cooled fast reactor, and waste management; and (8) physical chemistry of selected materials in environments simulating those of fission and fusion energy systems. The Division also has a program in basic chemistry research in the areas of fluid catalysis for converting small molecules to desired products; materials chemistry for liquids and vapors at high temperatures; interfacial processes of importance to corrosion science, high-temperature superconductivity, and catalysis; the thermochemistry of various minerals; and the geochemical processes responsible for trace-element migration within the earth's crust. The Division continued to be the major user of the technical support provided by the Analytical Chemistry Laboratory at ANL. 54 figs., 9 tabs.

  3. Laboratory testing of the in-well vapor-stripping system

    SciTech Connect (OSTI)

    Gilmore, T.J.; Francois, O.

    1996-03-01

    The Volatile organic Compounds-Arid Integrated Demonstration (VOC-Arid ID) was implemented by the US Department of Energy`s (DOE`s) Office of Technology Development to develop and test new technologies for the remediation of organic chemicals in the subsurface. One of the technologies being tested under the VOC-Arid ID is the in-well vapor-stripping system. The in-well vapor-stripping concept was initially proposed by researchers at Stanford University and is currently under development through a collaboration between workers at Stanford University and DOE`s Pacific Northwest National Laboratory. The project to demonstrate the in-well vapor-stripping technology is divided into three phases: (1) conceptual model and computer simulation, (2) laboratory testing, and (3) field demonstration. This report provides the methods and results of the laboratory testing in which a full-scale replica was constructed and tested above ground in a test facility located at DOE`s Hanford Site, Washington. The system is a remediation technology designed to preferentially extract volatile organic compounds (VOCs) from contaminated groundwater by converting them to a vapor phase.

  4. MODELLING AND SIMULATION OF LIQUID-VAPOR PHASE TRANSITION

    E-Print Network [OSTI]

    Faccanoni, Gloria

    . (,) P pressure law. G. Faccanoni DNS OF LIQUIDE-VAPOR PHASE TRANSITION 6 / 23 #12;Model Numerical Method. (,) P pressure law. G. Faccanoni DNS OF LIQUIDE-VAPOR PHASE TRANSITION 6 / 23 #12;Model Numerical Method Vapor = 0 x = 0 = 1Fictive fluid 0 pressure law

  5. Modeling engine oil vaporization and transport of the oil vapor in the piston ring pack on internal combustion engines

    E-Print Network [OSTI]

    Cho, Yeunwoo, 1973-

    2004-01-01

    A model was developed to study engine oil vaporization and oil vapor transport in the piston ring pack of internal combustion engines. With the assumption that the multi-grade oil can be modeled as a compound of several ...

  6. THE KINETICS OF LASER PULSE VAPORIZATION OF URANIUM DIOXIDE BY MASS SPECTROMETRY

    E-Print Network [OSTI]

    Tsai, C-h.

    2010-01-01

    The results of the vapor pressure and the vapor compositionyielded the partial vapor pressure of each species and therecommer.ded limits of total vapor pressure This work fitted

  7. Plutonium Oxide Process Capability Work Plan

    SciTech Connect (OSTI)

    Meier, David E.; Tingey, Joel M.

    2014-02-28

    Pacific Northwest National Laboratory (PNNL) has been tasked to develop a Pilot-scale Plutonium-oxide Processing Unit (P3U) providing a flexible capability to produce 200g (Pu basis) samples of plutonium oxide using different chemical processes for use in identifying and validating nuclear forensics signatures associated with plutonium production. Materials produced can also be used as exercise and reference materials.

  8. Aluminum-doped Zinc Oxide Nanoink

    Energy Innovation Portal (Marketing Summaries) [EERE]

    2014-08-15

    Scientists at Berkeley Lab have developed a method for fabricating conductive aluminum-doped zinc oxide (AZO) nanocrystals that provide a lower cost, less toxic, earth-abundant alternative to the widely used transparent conductive oxide (TCO) indium tin oxide while offering comparable optical and electronic properties. TCOs are used in devices such as flat screen displays, photovoltaic cells, photochromic windows, chemical sensors, and biosensors....

  9. Predicting the radiation tolerance of oxides

    SciTech Connect (OSTI)

    Sickafus, K. (Kurt E.); Grimes, R. W. (Robin W.)

    2001-01-01

    We have used atomistic computer simulations and ion beam irradiations to examine radiation damage accumulation in multicomponent oxides, We have developed contour energy maps via computer simulations to predict the effects of oxide structure and chemical composition on radiation-induced atomic disorder, defect migration, and swelling. Ion irradiation damage experiments have been perfonned on, pyrochlore and fluorite-structured oxide ceramics to test the predictions from computer models.

  10. Advanced Membrane Systems: Recovering Wasteful and Hazardous Fuel Vapors at the Gasoline Tank

    Office of Energy Efficiency and Renewable Energy (EERE)

    Case study covering Compact Membrane Systems, Inc. and its membrane vapor processor that recovers fuel vapors from gasoline refueling.

  11. Frontiers in Chemical Imaging Seminar Series

    E-Print Network [OSTI]

    Frontiers in Chemical Imaging Seminar Series S cience and Technology of Multifunctional Oxide Materials Science Division, Argonne National Laboratory Abstract New paradigms in the research and development of novel multifunctional oxide and nanocarbon thin films are providing the bases for new physics

  12. Vapor deposition of platinum alloyed nickel aluminide coatings Z. Yu , K.P. Dharmasena, D.D. Hass, H.N.G. Wadley

    E-Print Network [OSTI]

    Wadley, Haydn

    for the thermal and oxidation protection of high temperature components used in advanced gas turbine and dieselVapor deposition of platinum alloyed nickel aluminide coatings Z. Yu , K.P. Dharmasena, D.D. Hass, H.N.G. Wadley Department of Materials Science and Engineering University of Virginia Charlottesville

  13. Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates

    DOE Patents [OSTI]

    Sarin, V.K.

    1991-07-30

    A process is disclosed for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900--1500 C and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuous first outer layer about 0.5-900 microns thick including an oxide of aluminum or zirconium over and chemically bonded to the intermediate layer.

  14. Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates

    DOE Patents [OSTI]

    Sarin, Vinod K. (Lexington, MA)

    1991-01-01

    A process for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900.degree.-1500.degree. C. and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuous first outer layer about 0.5-900 microns thick including an oxide of aluminum or zirconium over and chemically bonded to the intermediate layer.

  15. Hypothetical Thermodynamic Properties: Vapor Pressures and Vaporization Enthalpies of the Even n-Alkanes from C78 to C92 at T ) 298.15 K by

    E-Print Network [OSTI]

    Chickos, James S.

    Hypothetical Thermodynamic Properties: Vapor Pressures and Vaporization Enthalpies of the Even n and vapor pressures of the n-alkanes from T ) (298.15 to 540) K for heneicosane to dononacontane. The vapor pressure and vaporization enthalpy results obtained are compared with estimated data from Morgan's "PERT2

  16. Copper vapor laser modular packaging assembly

    DOE Patents [OSTI]

    Alger, Terry W. (Tracy, CA); Ault, Earl R. (Dublin, CA); Moses, Edward I. (Castro Valley, CA)

    1992-01-01

    A modularized packaging arrangement for one or more copper vapor lasers and associated equipment is disclosed herein. This arrangement includes a single housing which contains the laser or lasers and all their associated equipment except power, water and neon, and means for bringing power, water, and neon which are necessary to the operation of the lasers into the container for use by the laser or lasers and their associated equipment.

  17. Copper vapor laser modular packaging assembly

    DOE Patents [OSTI]

    Alger, T.W.; Ault, E.R.; Moses, E.I.

    1992-12-01

    A modularized packaging arrangement for one or more copper vapor lasers and associated equipment is disclosed herein. This arrangement includes a single housing which contains the laser or lasers and all their associated equipment except power, water and neon, and means for bringing power, water, and neon which are necessary to the operation of the lasers into the container for use by the laser or lasers and their associated equipment. 2 figs.

  18. Apparatus and method for photochemical vapor deposition

    DOE Patents [OSTI]

    Jackson, Scott C. (Wilmington, DE); Rocheleau, Richard E. (Wilmington, DE)

    1987-03-31

    A photochemical vapor deposition apparatus includes a reactor housing having a window in one wall above a reaction chamber in the housing. A transparent curtain divides the reaction chamber into a reaction zone and a flush zone. At least one substrate is mounted in the reaction zone in light communication with the window so that ultraviolet radiation may penetrate through the window into the reaction zone. The window is kept clear by a gas flowing through the flush zone.

  19. High volume fuel vapor release valve

    SciTech Connect (OSTI)

    Gimby, D.R.

    1991-09-03

    This patent describes a fuel vapor release valve for use in a vehicle fuel system. It comprises a valve housing 10 placed in a specific longitudinal orientation, the valve housing 10 defining an interior cavity 22 having an inlet 20 for admitting fuel vapor and an outlet 14 for discharging such fuel vapor; a valve member 24 positioned in the cavity 22 for movement between an outlet 14 opening position and an outlet 14 closing position, the valve member 24 including a cap member 34 having a seat surface 36 for mating with the outlet 14 and an orifice 42 extending through the cap member 34 providing a passageway from the outlet 14 to the cavity 22, the orifice 42 extending through the cap member 34 providing a passageway from the outlet 14 to the cavity 22, the orifice 42 having a lesser radius than the outlet 14; the valve member 24 further including a plug member 30 engaged with the cap member 34 for movement between an orifice 42 opening position and an orifice 42 closing position; and, a valve housing tilt responsive means for moving the valve member 24 to an outlet 14 and orifice 42 closing position in response to tilting of the valve 10 about its longitudinal axis whereby, upon the return of the valve 10 to its specified longitudinal orientation, the plug member 30 first moves to an orifice 42 opening position and the cap member 34 subsequently moves to an outlet 14 opening position.

  20. Combined rankine and vapor compression cycles

    DOE Patents [OSTI]

    Radcliff, Thomas D.; Biederman, Bruce P.; Brasz, Joost J.

    2005-04-19

    An organic rankine cycle system is combined with a vapor compression cycle system with the turbine generator of the organic rankine cycle generating the power necessary to operate the motor of the refrigerant compressor. The vapor compression cycle is applied with its evaporator cooling the inlet air into a gas turbine, and the organic rankine cycle is applied to receive heat from a gas turbine exhaust to heat its boiler within one embodiment, a common condenser is used for the organic rankine cycle and the vapor compression cycle, with a common refrigerant, R-245a being circulated within both systems. In another embodiment, the turbine driven generator has a common shaft connected to the compressor to thereby eliminate the need for a separate motor to drive the compressor. In another embodiment, an organic rankine cycle system is applied to an internal combustion engine to cool the fluids thereof, and the turbo charged air is cooled first by the organic rankine cycle system and then by an air conditioner prior to passing into the intake of the engine.

  1. Chemical heat pump and chemical energy storage system

    DOE Patents [OSTI]

    Clark, Edward C. (Woodinville, WA); Huxtable, Douglas D. (Bothell, WA)

    1985-08-06

    A chemical heat pump and storage system employs sulfuric acid and water. In one form, the system includes a generator and condenser, an evaporator and absorber, aqueous acid solution storage and water storage. During a charging cycle, heat is provided to the generator from a heat source to concentrate the acid solution while heat is removed from the condenser to condense the water vapor produced in the generator. Water is then stored in the storage tank. Heat is thus stored in the form of chemical energy in the concentrated acid. The heat removed from the water vapor can be supplied to a heat load of proper temperature or can be rejected. During a discharge cycle, water in the evaporator is supplied with heat to generate water vapor, which is transmitted to the absorber where it is condensed and absorbed into the concentrated acid. Both heats of dilution and condensation of water are removed from the thus diluted acid. During the discharge cycle the system functions as a heat pump in which heat is added to the system at a low temperature and removed from the system at a high temperature. The diluted acid is stored in an acid storage tank or is routed directly to the generator for reconcentration. The generator, condenser, evaporator, and absorber all are operated under pressure conditions specified by the desired temperature levels for a given application. The storage tanks, however, can be maintained at or near ambient pressure conditions. In another form, the heat pump system is employed to provide usable heat from waste process heat by upgrading the temperature of the waste heat.

  2. Synthesis and characterizations of graphene oxide and reduced graphene oxide nanosheets

    SciTech Connect (OSTI)

    Venkanna, M., E-mail: venkanna.pcu@gmail.com; Chakraborty, Amit K., E-mail: venkanna.pcu@gmail.com [Carbon Nanotechnology Laboratory, Department of Physics, National Institute of Technology Durgapur, M.G. Avenue, Durgapur - 713209 (India)

    2014-04-24

    Interest in graphene on its excellent mechanical, electrical, thermal and optical properties, it’s very high specific surface area, and our ability to influence these properties through chemical functionalization. Chemical reduction of graphene oxide is one of the main routes of preparation for large quantities of graphenes. Hydrazine hydrate used as reducing agent to prepare for the reduced graphene oxide (RGO). There are a number of methods for generating graphene and chemically modified graphene from natural graphite flakes, graphite derivative (such as graphite oxide) and graphite interaction compounds (i.e. expandable graphite). Here we review the use of colloidal suspensions of reduced graphene oxide (RGO) with large scalable, and is adaptable to a wide variety of applications. The graphene oxide (GO) and the reduced material (RGO) were characterized by XRD, UV-Vis spectroscopy, Thermo-gravimetric analysis (TGA), Raman spectroscopy and Field emission Scanning electron microscopy (FESEM) etc.

  3. Thermal conversion of biomass to valuable fuels, chemical feedstocks and chemicals

    DOE Patents [OSTI]

    Peters, William A. (Lexington, MA); Howard, Jack B. (Winchester, MA); Modestino, Anthony J. (Hanson, MA); Vogel, Fredreric (Villigen PSI, CH); Steffin, Carsten R. (Herne, DE)

    2009-02-24

    A continuous process for the conversion of biomass to form a chemical feedstock is described. The biomass and an exogenous metal oxide, preferably calcium oxide, or metal oxide precursor are continuously fed into a reaction chamber that is operated at a temperature of at least 1400.degree. C. to form reaction products including metal carbide. The metal oxide or metal oxide precursor is capable of forming a hydrolizable metal carbide. The reaction products are quenched to a temperature of 800.degree. C. or less. The resulting metal carbide is separated from the reaction products or, alternatively, when quenched with water, hydolyzed to provide a recoverable hydrocarbon gas feedstock.

  4. Synthesis of reduced graphene oxide/ZnO nanorods composites on graphene coated PET flexible substrates

    SciTech Connect (OSTI)

    Huang, Lei, E-mail: leihuang@shnu.edu.cn; Guo, Guilue; Liu, Yang; Chang, Quanhong; Shi, Wangzhou

    2013-10-15

    Graphical abstract: - Highlights: • ZnO nanorods synthesized on CVD-graphene and rGO surfaces, respectively. • ZnO/CVD-graphene and ZnO/rGO form a distinctive porous 3D structure. • rGO/ZnO nanostructures possibility in energy storage devices. - Abstract: In this work, reduced graphene oxide (rGO)/ZnO nanorods composites were synthesized on graphene coated PET flexible substrates. Both chemical vapor deposition (CVD) graphene and reduced graphene oxide (rGO) films were prepared following by hydrothermal growth of vertical aligned ZnO nanorods. Reduced graphene sheets were then spun coated on the ZnO materials to form a three dimensional (3D) porous nanostructure. The morphologies of the ZnO/CVD graphene and ZnO/rGO were investigated by SEM, which shows that the ZnO nanorods grown on rGO are larger in diameters and have lower density compared with those grown on CVD graphene substrate. As a result of fact, the rough surface of nano-scale ZnO on rGO film allows rGO droplets to seep into the large voids of ZnO nanorods, then to form the rGO/ZnO hierarchical structure. By comparison of the different results, we conclude that rGO/ZnO 3D nanostructure is more desirable for the application of energy storage devices.

  5. CHEMICAL ENGINEERING AND MANUFACTURING CHEMICAL ENGINEERING

    E-Print Network [OSTI]

    Provancher, William

    CHEMICAL ENGINEERING AND MANUFACTURING CHEMICAL ENGINEERING Objective Chemical Engineers of chemicals. This lesson introduces students to one component of chemical engineering: food processing, and a chemical engineer 2. How chemical engineers are involved in food production 3. That chemical engineers need

  6. Chemical sensors

    DOE Patents [OSTI]

    Lowell, J.R. Jr.; Edlund, D.J.; Friesen, D.T.; Rayfield, G.W.

    1991-07-02

    Sensors responsive to small changes in the concentration of chemical species are disclosed. The sensors comprise a mechanochemically responsive polymeric film capable of expansion or contraction in response to a change in its chemical environment. They are operatively coupled to a transducer capable of directly converting the expansion or contraction to a measurable electrical response. 9 figures.

  7. Bifacial solar cell with SnS absorber by vapor transport deposition

    SciTech Connect (OSTI)

    Wangperawong, Artit; Hsu, Po-Chun; Yee, Yesheng; Herron, Steven M.; Clemens, Bruce M.; Cui, Yi; Bent, Stacey F.

    2014-10-27

    The SnS absorber layer in solar cell devices was produced by vapor transport deposition (VTD), which is a low-cost manufacturing method for solar modules. The performance of solar cells consisting of Si/Mo/SnS/ZnO/indium tin oxide (ITO) was limited by the SnS layer's surface texture and field-dependent carrier collection. For improved performance, a fluorine doped tin oxide (FTO) substrate was used in place of the Mo to smooth the topography of the VTD SnS and to make bifacial solar cells, which are potentially useful for multijunction applications. A bifacial SnS solar cell consisting of glass/FTO/SnS/CdS/ZnO/ITO demonstrated front- and back-side power conversion efficiencies of 1.2% and 0.2%, respectively.

  8. Decontamination of metals using chemical etching

    DOE Patents [OSTI]

    Lerch, Ronald E. (Kennewick, WA); Partridge, Jerry A. (Richland, WA)

    1980-01-01

    The invention relates to chemical etching process for reclaiming contaminated equipment wherein a reduction-oxidation system is included in a solution of nitric acid to contact the metal to be decontaminated and effect reduction of the reduction-oxidation system, and includes disposing a pair of electrodes in the reduced solution to permit passage of an electrical current between said electrodes and effect oxidation of the reduction-oxidation system to thereby regenerate the solution and provide decontaminated equipment that is essentially radioactive contamination-free.

  9. G-Band Vapor Radiometer Profiler (GVRP) Handbook

    SciTech Connect (OSTI)

    Caddeau, MP

    2010-06-23

    The G-Band Vapor Radiometer Profiler (GVRP) provides time-series measurements of brightness temperatures from 15 channels between 170 and 183.310 GHz. Atmospheric emission in this spectral region is primarily due to water vapor, with some influence from liquid water. Channels between 170.0 and 176.0 GHz are particularly sensitive to the presence of liquid water. The sensitivity to water vapor of the 183.31-GHz line is approximately 30 times higher than at the frequencies of the two-channel microwave radiometer (MWR) for a precipitable water vapor (PWV) amount of less than 2.5 mm. Measurements from the GVRP instrument are therefore especially useful during low-humidity conditions (PWV < 5 mm). In addition to integrated water vapor and liquid water, the GVRP can provide low-resolution vertical profiles of water vapor in very dry conditions.

  10. Method and apparatus for concentrating vapors for analysis

    DOE Patents [OSTI]

    Grate, Jay W. (West Richland, WA); Baldwin, David L. (Kennewick, WA); Anheier, Jr., Norman C. (Richland, WA)

    2012-06-05

    A pre-concentration device and a method are disclosed for concentrating gaseous vapors for analysis. Vapors sorbed and concentrated within the bed of the pre-concentration device are thermally desorbed, achieving at least partial separation of the vapor mixtures. The pre-concentration device is suitable, e.g., for pre-concentration and sample injection, and provides greater resolution of peaks for vapors within vapor mixtures, yielding detection levels that are 10-10,000 times better than direct sampling and analysis systems. Features are particularly useful for continuous unattended monitoring applications. The invention finds application in conjunction with, e.g., analytical instruments where low detection limits for gaseous vapors are desirable.

  11. Light-extraction enhancement in GaN-based light-emitting diodes using grade-refractive-index amorphous titanium oxide films with porous structures

    SciTech Connect (OSTI)

    Liu, D.-S.; Lin, T.-W.; Huang, B.-W.; Juang, F.-S.; Lei, P.-H. [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei 63201, Taiwan (China); Hu, C.-Z. [Chilin Technology Co. Ltd., Tainan County 71758, Taiwan (China)

    2009-04-06

    Amorphous titanium oxide (a-TiO{sub x}:OH) films prepared by plasma-enhanced chemical-vapor deposition at 200 and 25 deg. C are in turn deposited onto the GaN-based light-emitting diode (LED) to enhance the associated light extraction efficiency. The refractive index, porosity, and photocatalytic effect of the deposited films are correlated strongly with the deposition temperatures. The efficiency is enhanced by a factor of {approx}1.31 over that of the uncoated LEDs and exhibited an excellent photocatalytic property after an external UV light irradiation. The increase in the light extraction is related to the reduction in the Fresnel transmission loss and the enhancement of the light scattering into the escape cone by using the graded-refractive-index a-TiO{sub x}:OH film with porous structures.

  12. Calculation of the Dimer Equilibrium Constant of Heavy Water Saturated Vapor

    E-Print Network [OSTI]

    Bulavin, L A; Makhlaichuk, V N

    2015-01-01

    Water is the most common substance on Earth.The discovery of heavy water and its further study have shown that the change of hydrogen for deuterium leads to the significant differences in their properties.The triple point temperature of heavy water is higher,at the same time the critical temperature is lower.Experimental values of the second virial coefficient of the EOS for the vapor of normal and heavy water differ at all temperatures.This fact can influence the values of the dimerization constant for the heavy water vapor.The equilibrium properties of the dimerization process are described with the methods of chemical thermodynamics.The chemical potentials for monomers (m) and dimers (d)are the functions of their concentrations.The interactions of monomer-dimer and dimer-dimer types are taken into account within the solution of equation for chemical potentials.The obtained expression for the dimerization constant contains the contributions of these types.The averaged potentials are modeled by the Sutherlan...

  13. Vapor port and groundwater sampling well

    DOE Patents [OSTI]

    Hubbell, J.M.; Wylie, A.H.

    1996-01-09

    A method and apparatus have been developed for combining groundwater monitoring wells with unsaturated-zone vapor sampling ports. The apparatus allows concurrent monitoring of both the unsaturated and the saturated zone from the same well at contaminated areas. The innovative well design allows for concurrent sampling of groundwater and volatile organic compounds (VOCs) in the vadose (unsaturated) zone from a single well, saving considerable time and money. The sample tubes are banded to the outer well casing during installation of the well casing. 10 figs.

  14. Vapor port and groundwater sampling well

    DOE Patents [OSTI]

    Hubbell, Joel M. (Idaho Falls, ID); Wylie, Allan H. (Idaho Falls, ID)

    1996-01-01

    A method and apparatus has been developed for combining groundwater monitoring wells with unsaturated-zone vapor sampling ports. The apparatus allows concurrent monitoring of both the unsaturated and the saturated zone from the same well at contaminated areas. The innovative well design allows for concurrent sampling of groundwater and volatile organic compounds (VOCs) in the vadose (unsaturated) zone from a single well, saving considerable time and money. The sample tubes are banded to the outer well casing during installation of the well casing.

  15. Copper vapor laser acoustic thermometry system

    DOE Patents [OSTI]

    Galkowski, Joseph J. (Livermore, CA)

    1987-01-01

    A copper vapor laser (CVL) acoustic thermometry system is disclosed. The invention couples an acoustic pulse a predetermined distance into a laser tube by means of a transducer and an alumina rod such that an echo pulse is returned along the alumina rod to the point of entry. The time differential between the point of entry of the acoustic pulse into the laser tube and the exit of the echo pulse is related to the temperature at the predetermined distance within the laser tube. This information is processed and can provide an accurate indication of the average temperature within the laser tube.

  16. Category:Mercury Vapor | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIR Jump to: navigation,Ground GravityListsMercury Vapor Jump to:

  17. Method for controlling corrosion in thermal vapor injection gases

    DOE Patents [OSTI]

    Sperry, John S. (Houston, TX); Krajicek, Richard W. (Houston, TX)

    1981-01-01

    An improvement in the method for producing high pressure thermal vapor streams from combustion gases for injection into subterranean oil producing formations to stimulate the production of viscous minerals is described. The improvement involves controlling corrosion in such thermal vapor gases by injecting water near the flame in the combustion zone and injecting ammonia into a vapor producing vessel to contact the combustion gases exiting the combustion chamber.

  18. Review of enhanced vapor diffusion in porous media

    SciTech Connect (OSTI)

    Webb, S.W.; Ho, C.K.

    1998-08-01

    Vapor diffusion in porous media in the presence of its own liquid has often been treated similar to gas diffusion. The gas diffusion rate in porous media is much lower than in free space due to the presence of the porous medium and any liquid present. However, enhanced vapor diffusion has also been postulated such that the diffusion rate may approach free-space values. Existing data and models for enhanced vapor diffusion, including those in TOUGH2, are reviewed in this paper.

  19. Calculation of the Dimer Equilibrium Constant of Heavy Water Saturated Vapor

    E-Print Network [OSTI]

    L. A. Bulavin; S. V. Khrapatiy; V. N. Makhlaichuk

    2015-03-13

    Water is the most common substance on Earth.The discovery of heavy water and its further study have shown that the change of hydrogen for deuterium leads to the significant differences in their properties.The triple point temperature of heavy water is higher,at the same time the critical temperature is lower.Experimental values of the second virial coefficient of the EOS for the vapor of normal and heavy water differ at all temperatures.This fact can influence the values of the dimerization constant for the heavy water vapor.The equilibrium properties of the dimerization process are described with the methods of chemical thermodynamics.The chemical potentials for monomers (m) and dimers (d)are the functions of their concentrations.The interactions of monomer-dimer and dimer-dimer types are taken into account within the solution of equation for chemical potentials.The obtained expression for the dimerization constant contains the contributions of these types.The averaged potentials are modeled by the Sutherland potential.Theoretical values of the dimerization constant for the heavy water vapor at different temperatures are compared to those for normal water.We see the exceeding of the values for the heavy water at all temperatures.This fact is in good agreement with all experimental data that is available.The excess is related to the differences in the character of the heat excitations of the dimers of normal and heavy water,their rotational constants and energy of their vibrational excitations.Significant role is also played by the monomer-dimer and dimer-dimer interactions.

  20. 14 January 2000 Z .Chemical Physics Letters 316 2000 211216

    E-Print Network [OSTI]

    Rubloff, Gary W.

    plasma-arc, laser ablation, and chemical vapor-phase synthesis have been employed to Z .produce bulk are low. We describe a new high-yield plasma-arc method that easily and reliably produces macroscopic bulk amounts of such non-carbon nanotubes. w xSeveral techniques including plasma-arc 6­9 , laser w

  1. Ductless fume hoods are designed to remove hazardous fumes and vapors from the work area by passing the exhaust air through a filter and/or adsorbent, such as an activated

    E-Print Network [OSTI]

    de Lijser, Peter

    I. Policy Ductless fume hoods are designed to remove hazardous fumes and vapors from the work area to Hazardous Chemicals in Laboratories); 5154.1 (Ventilation Requirements for Laboratory-Type Hood Operations require use of fume hoods to control exposure to hazardous or odorous chemicals. IV. Definitions Activated

  2. M. Bahrami ENSC 461 (S 11) Vapor Power Cycles 1 Vapor Power Cycles

    E-Print Network [OSTI]

    Bahrami, Majid

    is not a suitable model for steam power cycle since: The turbine has to handle steam with low quality which will cause erosion and wear in turbine blades. It is impractical to design a compressor that handles two vapor expands isentropically in turbine and produces work. 4-1: Const P heat rejection High quality

  3. Oxidation catalyst

    DOE Patents [OSTI]

    Ceyer, Sylvia T. (Cambridge, MA); Lahr, David L. (Cambridge, MA)

    2010-11-09

    The present invention generally relates to catalyst systems and methods for oxidation of carbon monoxide. The invention involves catalyst compositions which may be advantageously altered by, for example, modification of the catalyst surface to enhance catalyst performance. Catalyst systems of the present invention may be capable of performing the oxidation of carbon monoxide at relatively lower temperatures (e.g., 200 K and below) and at relatively higher reaction rates than known catalysts. Additionally, catalyst systems disclosed herein may be substantially lower in cost than current commercial catalysts. Such catalyst systems may be useful in, for example, catalytic converters, fuel cells, sensors, and the like.

  4. Thermodynamic and transport properties of sodium liquid and vapor...

    Office of Scientific and Technical Information (OSTI)

    sodium liquid and vapor. Recently published Russian recommendations and results of equation of state calculations on thermophysical properties of sodium have been included in...

  5. Direct-Current Resistivity Survey At Cove Fort Area - Vapor ...

    Open Energy Info (EERE)

    Direct-Current Resistivity Survey At Cove Fort Area - Vapor (Warpinski, Et Al., 2004) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity:...

  6. Direct-Current Resistivity Survey At Cove Fort Area - Vapor ...

    Open Energy Info (EERE)

    2002) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Direct-Current Resistivity Survey At Cove Fort Area - Vapor (Warpinski, Et Al., 2002)...

  7. Aromatic-radical oxidation chemistry

    SciTech Connect (OSTI)

    Glassman, I.; Brezinsky, K. [Princeton Univ., NJ (United States)

    1993-12-01

    The research effort has focussed on discovering an explanation for the anomalously high CO{sub 2} concentrations observed early in the reaction sequence of the oxidation of cyclopentadiene. To explain this observation, a number of plausible mechanisms have been developed which now await experimental verification. One experimental technique for verifying mechanisms is to probe the reacting system by perturbing the radical concentrations. Two forms of chemical perturbation of the oxidation of cyclopentadiene were begun during this past year--the addition of NO{sub 2} and CO to the reacting mixture.

  8. Chemical sensors

    DOE Patents [OSTI]

    Lowell, J.R. Jr.; Edlund, D.J.; Friesen, D.T.; Rayfield, G.W.

    1992-06-09

    Sensors responsive to small changes in the concentration of chemical species are disclosed, comprising a mechanicochemically responsive polymeric film capable of expansion or contraction in response to a change in its chemical environment, either operatively coupled to a transducer capable of directly converting the expansion or contraction to a measurable electrical or optical response, or adhered to a second inert polymeric strip, or doped with a conductive material. 12 figs.

  9. Classes of Chemical Reactions Reactions in aqueous media

    E-Print Network [OSTI]

    Zakarian, Armen

    Classes of Chemical Reactions Reactions in aqueous media · Precipitation reactions · Acid-Base reactions · Oxidation-Reduction reactions · Reversible reactions Classes of Chemical Reactions Water (H2O;Classes of Chemical Reactions The solubility of ionic compounds: dissociation O H H + NaCl Cl- Cl- Cl- Na

  10. Reasoning and Representation: the Sketching of Organic Chemical Reaction Mechanisms

    E-Print Network [OSTI]

    Marchese, Francis

    Reasoning and Representation: the Sketching of Organic Chemical Reaction Mechanisms Position paper of sketching chemical reaction mechanisms in order to reason-out the structural transformations that convert. The general chemical reaction patterns of oxidation-reduction, functional group transfer, hydrolysis

  11. Thermochemistry of Silicon-Hydrogen Compounds Generalized from Quantum Chemical Calculations

    E-Print Network [OSTI]

    Swihart, Mark T.

    Engineering, Northwestern UniVersity, 2145 Sheridan Road, EVanston, Illinois 60208, and Department of Chemical Engineering, UniVersity at Buffalo, 907 Furnas Hall, Buffalo, New York 14260 ReceiVed: June 10, 2003; In Final hydrides within silicon chemical vapor deposition processes is an important source of yield loss during

  12. Vapor and gas sampling of Single-Shell Tank 241-A-101 using the Vapor Sampling System

    SciTech Connect (OSTI)

    Caprio, G.S.

    1995-11-01

    This document presents sampling data resulting from the June 8, 1995, sampling of SST 241-A-101 using the Vapor Sampling System.

  13. Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

    SciTech Connect (OSTI)

    Silva, Chinthaka M; Katoh, Yutai; Voit, Stewart L; Snead, Lance Lewis

    2015-01-01

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. However, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

  14. Laboratory test plan in-well vapor stripping system

    SciTech Connect (OSTI)

    Koegler, K.J

    1994-07-01

    This test plan describes the activities that will be conducted as a part of the laboratory testing of a full-scale mockup of the Stanford in-well vapor stripping system. These tests will be conducted to delineate design parameters for the in-well vapor stripping unit and to identify and quantify variables that are sensitive to the dynamic hydraulic effects induced by operation of the system. No radioactive materials are involved in this test. In-well vapor stripping has been used successfully as an alternative to conventional pump-and-treat technology for remediation of volatile organic compound (VOC) contaminated groundwater in Europe and more recently in the United States. In-well vapor stripping permits in situ remediation of VOC-contaminated groundwater by combining an in-well vapor stripping system with a treatment well is used to extract and discharge groundwater simultaneously, resulting in the establishment of a vertical circulation groundwater flow cell in the aquifer. Groundwater extracted from the aquifer via the lower screened interval is treated for VOCs by in-well vapor stripping within the treatment well. This stripping causes aqueous phase VOCs to partition preferentially into a vapor phase. Treated groundwater is discharged back to the aquifer via the upper screened interval of the treatment well, while the vapor phase VOCs are simultaneously removed from the well bore and contained at the surface with a vacuum extraction system. Groundwater entrained into the vertical circulation flow cell becomes sequentially cleaned of VOC contamination in an efficient manner without the need for surface treatment and handling of contaminated groundwater. An added benefit of in-well vapor stripping is the ability to perform vadose zone vapor extraction concurrently with groundwater remediation. This uses the vacuum extraction capabilities of the in-well vapor stripping configured with the upper screened interval placed into the vadose zone above the water table.

  15. UNCORRECTEDPROOF Please cite this article in press as: D. Lipkind et al., The vaporization enthalpies and vapor pressures of a series of unsaturated fatty acids methyl

    E-Print Network [OSTI]

    Chickos, James S.

    enthalpies and vapor pressures of a series of unsaturated fatty acids methyl esters by correlation gas­8 Thermochimica Acta xxx (2007) xxx­xxx The vaporization enthalpies and vapor pressures of a series of unsaturated- vonate (methyl Z 15-tetracosenoate) are evaluated at T = 298.15 and vapor pressures are evaluated over

  16. 1-Dimensional Numerical Model of Thermal Conduction and Vapor Diffusion

    E-Print Network [OSTI]

    Schörghofer, Norbert

    developed by Samar Khatiwala, 2001 extended to variable thermal properties and irregular grid by Norbert Sch for c. Upper boundary condition: a) Radiation Q + k T z z=0 = T4 z=0 Q is the incoming solar flux of Water Vapor with Phase Transitions developed by Norbert Sch¨orghofer, 2003­2004 3 phases: vapor, free

  17. Recuperative Vapor Recompression Heat Pumps for Cryogenic Air Separation

    E-Print Network [OSTI]

    Ahrendt, Wolfgang

    Air N2 CW MAC MHE LP HP CW N2 O2 Recuperative Vapor Recompression Heat Pumps for Cryogenic Air · The compression of O2 in the air feed is avoided by applying recuperative vapor recompression heat pumps) heat pump The compression of B can be avoided 77 79 81 83 85 87 89 91 93 -5000 5000 15000 25000 35000

  18. ADHESION FORCES BETWEEN MICA SURFACES IN UNDERSATURATED VAPORS OF HYDROCARBONS

    E-Print Network [OSTI]

    Matsuoka, Hiroshige

    ADHESION FORCES BETWEEN MICA SURFACES IN UNDERSATURATED VAPORS OF HYDROCARBONS H. MATSUOKA1 , T] or meniscus force [3], which have been neglected in the conventional and relatively large mechani- cal systems forces between mica surfaces in under- saturated vapors of several kind of hydrocarbon liquids are mea

  19. RESONANT FARADAY ROTATION IN A HOT LITHIUM VAPOR

    E-Print Network [OSTI]

    Cronin, Alex D.

    RESONANT FARADAY ROTATION IN A HOT LITHIUM VAPOR By SCOTT RUSSELL WAITUKAITIS A Thesis Submitted: #12;Abstract I describe a study of Faraday rotation in a hot lithium vapor. I begin by dis- cussing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 The Lithium Oven and Solenoid . . . . . . . . . . . . . . . . . 7 3 Theoretical Framework

  20. Kinetics of wet sodium vapor complex plasma

    SciTech Connect (OSTI)

    Mishra, S. K., E-mail: nishfeb@rediffmail.com [Institute for Plasma Research (IPR), Gandhinagar 382428 (India); Sodha, M. S. [Centre of Energy Studies, Indian Institute of Technology Delhi (IITD), New Delhi 110016 (India)] [Centre of Energy Studies, Indian Institute of Technology Delhi (IITD), New Delhi 110016 (India)

    2014-04-15

    In this paper, we have investigated the kinetics of wet (partially condensed) Sodium vapor, which comprises of electrons, ions, neutral atoms, and Sodium droplets (i) in thermal equilibrium and (ii) when irradiated by light. The formulation includes the balance of charge over the droplets, number balance of the plasma constituents, and energy balance of the electrons. In order to evaluate the droplet charge, a phenomenon for de-charging of the droplets, viz., evaporation of positive Sodium ions from the surface has been considered in addition to electron emission and electron/ion accretion. The analysis has been utilized to evaluate the steady state parameters of such complex plasmas (i) in thermal equilibrium and (ii) when irradiated; the results have been graphically illustrated. As a significant outcome irradiated, Sodium droplets are seen to acquire large positive potential, with consequent enhancement in the electron density.