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Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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1

Chemical vapor deposition of aluminum oxide  

DOE Patents (OSTI)

An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.

Gordon, Roy (Cambridge, MA); Kramer, Keith (Cleveland, OH); Liu, Xinye (Cambridge, MA)

2000-01-01T23:59:59.000Z

2

Oxidative chemical vapor deposition of conductive polymers for use in novel photovoltaic device architectures  

E-Print Network (OSTI)

The conductive polymer poly(3,4-ethylenedioxythiophene), (PEDOT), deposited via oxidative chemical vapor deposition (oCVD) has been investigated for use in organic electronic devices. The oCVD process as well as the ...

Howden, Rachel M. (Rachel Mary)

2013-01-01T23:59:59.000Z

3

Chemical-vapor deposition of complex oxides: materials and process development  

SciTech Connect

This is the final report of a six-month, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL) part of the Advanced Materials Laboratory (AML). The demand for higher performance and lower cost in electronics is driving the need for advanced materials and consequent process integration. Ceramic thin-film technology is becoming more important in the manufacture of microelectronic devices, photovoltaics, optoelectronics, magneto-optics, sensors, microwave, and radio frequency communication devices, and high-Tc superconducting tapes. A flexible processing approach for potential large-scale manufacturing of novel electronic ceramic thin films is desirable. Current thin- film deposition technologies based on physical vapor-deposition techniques are limited in scale potential and have limited control of processing parameters. The lack of control over multiple process parameters inhibits the versatility and reproducibility of the physical vapor deposition processes applied to complex oxides. Chemical vapor deposition is emerging as a viable approach for large- scale manufacturing of electronic materials. Specifically, the ability to control more processing parameters with chemical vapor deposition than with other processing techniques provides the reliability and material property reproducibility required by manufacturing. This project sought to investigate the chemical vapor deposition of complex oxides.

Muenchausen, R.

1996-11-01T23:59:59.000Z

4

Aerosol chemical vapor deposition of metal oxide films  

DOE Patents (OSTI)

A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

Ott, K.C.; Kodas, T.T.

1994-01-11T23:59:59.000Z

5

Electrochromic properties of iron oxide thin films prepared by chemical vapor deposition  

SciTech Connect

Iron oxide thin films were prepared by chemical vapor deposition. The source material was iron (III) acetylacetonate. The Fe{sub 2}O{sub 3} films were produced at a substrate temperature above 200 C. The films deposited at a substrate temperature above 300 C were polycrystalline {beta}-Fe{sub 2}O{sub 3}. Reduction and oxidation of the amorphous films in a 0.3 M LiClO{sub 4} propylene carbonate solution caused desirable changes in optical absorption. Coulometry indicated that the coloration efficiency was 6.0 to 6.5 cm{sup 2}/C.

Maruyama, Toshiro; Kanagawa, Tetsuya [Kyoto Univ. (Japan). Dept. of Chemical Engineering

1996-05-01T23:59:59.000Z

6

Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby  

DOE Patents (OSTI)

A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

Zhang, Ji-Guang (Golden, CO); Tracy, C. Edwin (Golden, CO); Benson, David K. (Golden, CO); Turner, John A. (Littleton, CO); Liu, Ping (Lakewood, CO)

2000-01-01T23:59:59.000Z

7

On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.  

SciTech Connect

Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are reached concerning the factors affecting the growth rate in on-line APCVD reactors. In addition, a substantial body of data was generated that can be used to model many different industrial tin oxide coating processes. These data include the most extensive compilation of thermochemistry for gas-phase tin-containing species as well as kinetic expressions describing tin oxide growth rates over a wide range of temperatures, pressures, and reactant concentrations.

Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W. (PPF Industries, Pittsburgh, PA)

2006-11-01T23:59:59.000Z

8

Growth of magnesium oxide thin lms using single molecular precursors by metalorganic chemical vapor deposition  

E-Print Network (OSTI)

Growth of magnesium oxide thin ®lms using single molecular precursors by metal±organic chemical precursors; Silicon; Sapphire 1. Introduction Magnesium oxide (MgO) thin ®lms have attracted much attention MgO ®lms on Si(100) above 6508C by thermal CVD. Murayama and Shionoya [12] used magnesium 2

Boo, Jin-Hyo

9

Implications of the toxicity of tetramethyltin, dimethyl tin dichloride, and tin tetrachloride in selecting a suitable tin precursor in the chemical vapor deposition of tin oxide  

Science Journals Connector (OSTI)

Potential health hazards in the chemical vapor deposition of tin oxide films from tetramethylin dimethylin dichloride and tin tetrachloride have to be balanced against the benefits to solar cell fabrication. Concerns regarding the toxicity costs and physical properties of and the quality of the tin oxide films produced with these tin precursors are outlined. (AIP)

Roy G. Gordon; James W. Prescia

1988-01-01T23:59:59.000Z

10

Chemical vapor deposition sciences  

SciTech Connect

Chemical vapor deposition (CVD) is a widely used method for depositing thin films of a variety of materials. Applications of CVD range from the fabrication of microelectronic devices to the deposition of protective coatings. New CVD processes are increasingly complex, with stringent requirements that make it more difficult to commercialize them in a timely fashion. However, a clear understanding of the fundamental science underlying a CVD process, as expressed through computer models, can substantially shorten the time required for reactor and process development. Research scientists at Sandia use a wide range of experimental and theoretical techniques for investigating the science of CVD. Experimental tools include optical probes for gas-phase and surface processes, a range of surface analytic techniques, molecular beam methods for gas/surface kinetics, flow visualization techniques and state-of-the-art crystal growth reactors. The theoretical strategy uses a structured approach to describe the coupled gas-phase and gas-surface chemistry, fluid dynamics, heat and mass transfer of a CVD process. The software used to describe chemical reaction mechanisms is easily adapted to codes that model a variety of reactor geometries. Carefully chosen experiments provide critical information on the chemical species, gas temperatures and flows that are necessary for model development and validation. This brochure provides basic information on Sandia`s capabilities in the physical and chemical sciences of CVD and related materials processing technologies. It contains a brief description of the major scientific and technical capabilities of the CVD staff and facilities, and a brief discussion of the approach that the staff uses to advance the scientific understanding of CVD processes.

NONE

1992-12-31T23:59:59.000Z

11

Role of gas phase reactions in subatmospheric chemical-vapor deposition ozone/TEOS processes for oxide deposition  

E-Print Network (OSTI)

-vapor deposition. Our results for oxide deposition show optimum process window around 200 Torr for producing films a po- tentially optimum process window in which film properties, deposition rates, film uniformity requires high quality dielectric films that can be deposited rapidly and conformally on high aspect ratio

Rubloff, Gary W.

12

Vapor phase modifiers for oxidative coupling  

DOE Patents (OSTI)

Volatilized metal compounds retard vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

Warren, Barbara K. (Charleston, WV)

1991-01-01T23:59:59.000Z

13

Vapor phase modifiers for oxidative coupling  

DOE Patents (OSTI)

Volatilized metal compounds are described which are capable of retarding vapor phase alkane conversion reactions in oxidative coupling processes that convert lower alkanes to higher hydrocarbons.

Warren, B.K.

1991-12-17T23:59:59.000Z

14

Chemical vapor deposition of functionalized isobenzofuran polymers  

E-Print Network (OSTI)

This thesis develops a platform for deposition of polymer thin films that can be further tailored by chemical surface modification. First, we explore chemical vapor deposition of functionalized isobenzofuran films using ...

Olsson, Ylva Kristina

2007-01-01T23:59:59.000Z

15

Aerogel composites using chemical vapor infiltration  

NLE Websites -- All DOE Office Websites (Extended Search)

Aerogel composites using chemical vapor infiltration Aerogel composites using chemical vapor infiltration Title Aerogel composites using chemical vapor infiltration Publication Type Journal Article Year of Publication 1995 Authors Hunt, Arlon J., Michael R. Ayers, and Wanqing Cao Journal Journal of Non-Crystalline Solids Volume 185 Pagination 227-232 Abstract A new method to produce novel composite materials based on the use of aerogels as a starting material is described. Using chemical vapor infiltration, a variety of solid materials were thermally deposited into the open pore structure of aerogel. The resulting materials possess new and unusual properties including photoluminescence, magnetism and altered optical properties. An important characteristic of this preparation process is the very small size of the deposits that gives rise to new behaviors. Silicon deposits exhibit photoluminescence, indicating quantum confinement. Two or more phases may be deposited simultaneously and one or both chemically or thermally reacted to produce new structures.

16

Hydrogen-Bond Acidic Polymers for Chemical Vapor Sensing. | EMSL  

NLE Websites -- All DOE Office Websites (Extended Search)

Acidic Polymers for Chemical Vapor Sensing. Hydrogen-Bond Acidic Polymers for Chemical Vapor Sensing. Abstract: A review with 171 references. Hydrogen-bond acidic polymers for...

17

Chemical vapor detection using nanomechanical platform  

Science Journals Connector (OSTI)

For high sensitive and multiplexed chemical analysis, an opto-mechanical detection platform has been built. To check the performance of the platform, we performed water vapor response measurements for ... sensors...

S. H. Lim

2007-11-01T23:59:59.000Z

18

Z .Thin Solid Films 392 2001 231 235 Atmospheric pressure chemical vapor deposition of  

E-Print Network (OSTI)

of electrochromic tungsten oxide films Roy G. Gordona,U , Sean Barryb , Jeffrey T. Bartona , Randy N.R. Broomhall oxide, WO , is a coloring layer commonly used in electrochromic windows and displays. Successful: Chemical vapor deposition; Tungsten; Oxides; Electrochromism 1. Introduction Tungsten oxide is a key

19

Chemical vapor deposition of epitaxial silicon  

DOE Patents (OSTI)

A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

Berkman, Samuel (Florham Park, NJ)

1984-01-01T23:59:59.000Z

20

Chem. Mater. 1995, 7, 2269-2272 2269 Water Vapor Adsorption on Chemically Treated  

E-Print Network (OSTI)

Chem. Mater. 1995, 7, 2269-2272 2269 Water Vapor Adsorption on Chemically Treated Activated Carbon August 25, 1995@ Water vapor adsorption on activated carbon cloth (ACCBO)which has been oxidized% Cl), and ACCBO (4% N), exhibits sigmoidal isotherms with hysteresis loops of varying magnitudes

Cal, Mark P.

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Electrochemistry of chemical vapor deposited tungsten films with relevance to chemical mechanical polishing  

SciTech Connect

The electrochemical behavior of chemically vapor deposited tungsten films in solutions of interest to tungsten chemical mechanical polishing has been investigated using dc potentiodynamic polarization, linear polarization, and Tafel methods. It was found that in the absence of an oxidizer, the tungsten surface was passivated most effectively at acidic pH values. At pH 2 or 4, a WO{sub 2}/WO{sub 3} duplex oxide layer of less than 50 A thickness was detected over the tungsten layer by X-ray photoelectron spectroscopy. The oxide layer formed at pH 2 was much thicker, and had better passivity compared to the oxide formed at pH 4. Addition of H{sub 2}O{sub 2} at pH 2 or 4 resulted in a dramatic increase in tungsten dissolution.

Kneer, E.A.; Raghunath, C.; Raghavan, S. [Univ. of Arizona, Tucson, AZ (United States). Dept. of Materials Science and Engineering; Jeon, J.S. [Advanced Micro Devices Inc., Sunnyvale, CA (United States)

1996-12-01T23:59:59.000Z

22

Chemical vapor deposition of group IIIB metals  

DOE Patents (OSTI)

Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

Erbil, A.

1989-11-21T23:59:59.000Z

23

Laser techniques for studying chemical vapor deposition  

SciTech Connect

Chemical vapor deposition (CVD) is widely used to produce thin films for microelectronics, protective coatings and other materials processing applications. Despite the large number of applications, however, little is known about the fundamental chemistry and physics of most CVD processes. CVD recipes have generally been determined empirically, but as process requirements become more stringent, a more basic understanding will be needed to improve reactor design and speed process optimization. In situ measurements of the reacting gas are important steps toward gaining such an understanding, both from the standpoint of characterizing the reactor and testing models of a CVD process. Our work, a coordinated program of experimental and theoretical research in the fundamental mechanisms of CVD, illustrates the application of laser techniques to the understanding of a CVD system. We have used a number of laser-based techniques to probe CVD systems and have compared our measurements with predictions from computer models, primarily for the silane CVD system. The silane CVD model solves the two-dimensional, steady-state boundary layer equations of fluid flow coupled to 26 elementary chemical reactions describing the thermal decomposition of silane and the subsequent reactions of intermediate species that result in the deposition of a silicon film.

Ho, P.; Breiland, W.G.; Coltrin, M.E.

1990-01-01T23:59:59.000Z

24

Catalytic Reactor For Oxidizing Mercury Vapor  

DOE Patents (OSTI)

A catalytic reactor (10) for oxidizing elemental mercury contained in flue gas is provided. The catalyst reactor (10) comprises within a flue gas conduit a perforated corona discharge plate (30a, b) having a plurality of through openings (33) and a plurality of projecting corona discharge electrodes (31); a perforated electrode plate (40a, b, c) having a plurality of through openings (43) axially aligned with the through openings (33) of the perforated corona discharge plate (30a, b) displaced from and opposing the tips of the corona discharge electrodes (31); and a catalyst member (60a, b, c, d) overlaying that face of the perforated electrode plate (40a, b, c) opposing the tips of the corona discharge electrodes (31). A uniformly distributed corona discharge plasma (1000) is intermittently generated between the plurality of corona discharge electrode tips (31) and the catalyst member (60a, b, c, d) when a stream of flue gas is passed through the conduit. During those periods when corona discharge (1000) is not being generated, the catalyst molecules of the catalyst member (60a, b, c, d) adsorb mercury vapor contained in the passing flue gas. During those periods when corona discharge (1000) is being generated, ions and active radicals contained in the generated corona discharge plasma (1000) desorb the mercury from the catalyst molecules of the catalyst member (60a, b, c, d), oxidizing the mercury in virtually simultaneous manner. The desorption process regenerates and activates the catalyst member molecules.

Helfritch, Dennis J. (Baltimore, MD)

1998-07-28T23:59:59.000Z

25

Initiated chemical vapor deposition of functional polyacrylic thin films  

E-Print Network (OSTI)

Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200?C) ...

Mao, Yu, 1975-

2005-01-01T23:59:59.000Z

26

All graphene electromechanical switch fabricated by chemical vapor deposition  

E-Print Network (OSTI)

We demonstrate an electromechanical switch comprising two polycrystalline graphene films; each deposited using ambient pressure chemical vapor deposition. The top film is pulled into electrical contact with the bottom film ...

Milaninia, Kaveh M.

27

The chemical vapor deposition of zirconium carbide onto ceramic substrates  

SciTech Connect

Zirconium carbide is an attractive ceramic material due to its unique properties such as high melting point, good thermal conductivity, and chemical resistance. The controlled preparation of zirconium carbide films of superstoichiometric, stoichiometric, and substoichiometric compositions has been achieved utilizing zirconium tetrachloride and methane precursor gases in an atmospheric pressure high temperature chemical vapor deposition system.

Glass, John A, Jr.; Palmisiano, Nick, Jr.; Welsh, R. Edward

1999-07-01T23:59:59.000Z

28

Method of physical vapor deposition of metal oxides on semiconductors  

DOE Patents (OSTI)

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Norton, David P. (Knoxville, TN)

2001-01-01T23:59:59.000Z

29

Fabrication of solid oxide fuel cell by electrochemical vapor deposition  

DOE Patents (OSTI)

In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (approximately 1100.degree.-1300.degree. C.) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20-50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

Brian, Riley (Willimantic, CT); Szreders, Bernard E. (Oakdale, CT)

1989-01-01T23:59:59.000Z

30

Fabrication of solid oxide fuel cell by electrochemical vapor deposition  

DOE Patents (OSTI)

In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (/approximately/1100/degree/ /minus/ 1300/degree/C) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20--50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

Riley, B.; Szreders, B.E.

1988-04-26T23:59:59.000Z

31

Metalorganic chemical vapor deposition of carbon-free ZnO using...  

NLE Websites -- All DOE Office Websites (Extended Search)

Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor. Metalorganic chemical vapor deposition of carbon-free...

32

Synthesis of carbon nanotubes on diamond-like carbon by the hot filament plasma-enhanced chemical vapor deposition method  

E-Print Network (OSTI)

by laser ablation of carbon rods, direct current arc-discharge between electrodes, or by chemical vapor emission scanning electron microscopy (FE-SEM), high resolution transmission scanning electron micro- scopy natural oxide. The synthesis of the DLC films was carried out using 13.56 MHz RF-PECVD. Prior to the DLC

Hong, Byungyou

33

Chemical vapor deposition of amorphous semiconductor films. Final subcontract report  

SciTech Connect

Chemical vapor deposition (CVD) from higher order silanes has been studied for fabricating amorphous hydrogenated silicon thin-film solar cells. Intrinsic and doped a-Si:H films were deposited in a reduced-pressure, tubular-flow reactor, using disilane feed-gas. Conditions for depositing intrinsic films at growth rates up to 10 A/s were identified. Electrical and optical properties, including dark conductivity, photoconductivity, activation energy, optical absorption, band-gap and sub-band-gap absorption properties of CVD intrinsic material were characterized. Parameter space for depositing intrinsic and doped films, suitable for device analysis, was identified.

Rocheleau, R.E.

1984-12-01T23:59:59.000Z

34

Combustion chemical vapor deposited coatings for thermal barrier coating systems  

SciTech Connect

The new deposition process, combustion chemical vapor deposition, shows a great deal of promise in the area of thermal barrier coating systems. This technique produces dense, adherent coatings, and does not require a reaction chamber. Coatings can therefore be applied in the open atmosphere. The process is potentially suitable for producing high quality CVD coatings for use as interlayers between the bond coat and thermal barrier coating, and/or as overlayers, on top of thermal barrier coatings. In this report, the evaluation of alumina and ceria coatings on a nickel-chromium alloy is described.

Hampikian, J.M.; Carter, W.B. [Georgia Institute of Technology, Atlanta, GA (United States). School of Materials Science and Engineering

1995-12-31T23:59:59.000Z

35

Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition  

SciTech Connect

We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.

Nam, Youngwoo, E-mail: youngwoo.nam@chalmers.se [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Sun, Jie; Lindvall, Niclas; Yurgens, August [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Jae Yang, Seung; Rae Park, Chong [Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of); Woo Park, Yung [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

2014-01-13T23:59:59.000Z

36

Chemical vapor deposition of hydrogenated amorphous silicon from disilane  

SciTech Connect

The authors describe hydrogenated amorphous silicon (a-Si:H) thin films deposited at growth rates of 1 to 30 A/s by chemical vapor deposition (CVD) from disilane source gas at 24 torr total pressure in a tubular reactor. The effects of substrate temperature and gas holding time (flow rate) on film growth rate and effluent gas composition were measured at temperatures ranging from 360{sup 0} to 485{sup 0}C and gas holding times from 3 to 62s. Effluent gases determined by gas chromatography included silane, disilane and other higher order silanes. A chemical reaction engineering model, based on a silylene (SiH/sub 2/) insertion gas phase reaction network and film growth from both SiH/sub 2/ and high molecular weight silicon species, Si/sub n/H/sub 2n/, was developed. The model predictions were in good agreement with experimentally determined growth rates and effluent gas compositions.

Bogaert, R.J.; Russell, T.W.F.; Klein, M.T. (Delaware Univ., Newark, DE (USA). Dept. of Chemical Engineering); Rocheleau, R.E.; Baron, B.N. (Delaware Univ., Newark, DE (USA). Inst. of Energy Conversion)

1989-10-01T23:59:59.000Z

37

Synthesis and Characterization of Magnetic Nanowires Prepared by Chemical Vapor Deposition.  

E-Print Network (OSTI)

??Various metal silicide and germanide magnetic nanowires were synthesized using a home-built CVD [chemical vapor deposition] system. The morphology, composition, and magnetic properties of the (more)

Tang, Siwei

2014-01-01T23:59:59.000Z

38

Selective deposition of silicon and silicon-germanium alloys by rapid thermal chemical vapor deposition  

SciTech Connect

Selective deposition of SiGe alloys by rapid thermal deposition has been studied using a commercially available Rapid Thermal Chemical Vapor Deposition (RTCVD) cluster tool. The precursors used in this work were dichlorosilane and germane diluted in either hydrogen or argon. An initial characterization was performed to find the appropriate temperature and GeH{sub 4} flow ranges to deposit epitaxial layers with low surface roughness. For layers with higher germanium concentration lower deposition temperatures are required to minimize surface roughness. The effects of the dilutant gas on the deposition were examined. An H{sub 2} dilutant affects the deposition by consuming chlorine released by the SiCl{sub 2}H{sub 2} and forming HCl. When Ar is used as the dilutant, more chlorine is available for other reactions that can result in etching of the silicon surface. Finally, the effects of pre-deposition treatment were determined. When compared to a wet HF dip, a gas/vapor phase HF/methanol native oxide removal treatment appears to increase the initiation time for the epitaxial deposition reaction. This is most likely due to increased fluorine termination of the surface. When a wet HF or HF/methanol native oxide removal is followed by a UV-Cl{sub 2} process, the deposition reaction initiation time is reduced. The UV-Cl{sub 2} process was also found to etch silicon through the native oxide.

Grant, J.M.; Ang, M.; Allen, L.R. [Sharp Microelectronics Technology, Inc., Camas, WA (United States)

1996-12-01T23:59:59.000Z

39

Chemical vapor deposition of boron-doped hydrogenated amorphous silicon  

SciTech Connect

Deposition conditions and film properties for a variety of boron-doped hydrogenated amorphous silicon films and silicon-carbon films produced by chemical vapor deposition (CVD) are discussed. Deposition gases include monosilane, disilane, trisilane, and acetylene. Two types of optically wide band-gap p layers are obtained. One of these window p layers (without carbon) has been extensively tested in photovoltaic devices. Remarkably, this p layer can be deposited between about 200 to 300 /sup 0/C. A typical open circuit voltage in an all CVD p-i-n device is 0.70--0.72 V, and in a hybrid device where the i and n layers are deposited by glow discharge, 0.8--0.83 V.

Ellis F.B. Jr.; Delahoy, A.E.

1985-07-15T23:59:59.000Z

40

Strain relaxation in graphene grown by chemical vapor deposition  

SciTech Connect

The growth of single layer graphene by chemical vapor deposition on polycrystalline Cu substrates induces large internal biaxial compressive strain due to thermal expansion mismatch. Raman backscattering spectroscopy and atomic force microscopy were used to study the strain relaxation during and after the transfer process from Cu foil to SiO{sub 2}. Interestingly, the growth of graphene results in a pronounced ripple structure on the Cu substrate that is indicative of strain relaxation of about 0.76% during the cooling from the growth temperature. Removing graphene from the Cu substrates and transferring it to SiO{sub 2} results in a shift of the 2D phonon line by 27?cm{sup ?1} to lower frequencies. This translates into additional strain relaxation. The influence of the processing steps, used etching solution and solvents on strain, is investigated.

Troppenz, Gerald V., E-mail: gerald.troppenz@helmholtz-berlin.de; Gluba, Marc A.; Kraft, Marco; Rappich, Jrg; Nickel, Norbert H. [Helmholtz-Zentrum Berlin fr Materialien und Energie GmbH, Institut fr Silizium Photovoltaik, Kekulstr. 5, D-12489 Berlin (Germany)

2013-12-07T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Field emission properties of chemical vapor deposited individual graphene  

SciTech Connect

Here, we report field emission (FE) properties of a chemical vapor deposited individual graphene investigated by in-situ transmission electron microscopy. Free-standing bilayer graphene is mounted on a cathode microprobe and FE processes are investigated varying the vacuum gap of cathode and anode. The threshold field for 10?nA current were found to be 515, 610, and 870?V/?m for vacuum gap of 400, 300, and 200?nm, respectively. It is observed that the structural stability of a high quality bilayer graphene is considerably stable during emission process. By contacting the nanoprobe with graphene and applying a bias voltage, structural deformation and buckling are observed with significant rise in temperature owing to Joule heating effect. The finding can be significant for practical application of graphene related materials in emitter based devices as well as understanding the contact resistance influence and heating effect.

Zamri Yusop, Mohd [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Department of Materials, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan); Yaakob, Yazid; Takahashi, Chisato; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya (Japan)

2014-03-03T23:59:59.000Z

42

Iron (III) Chloride doping of large-area chemical vapor deposition graphene  

E-Print Network (OSTI)

Chemical doping is an effective method of reducing the sheet resistance of graphene. This thesis aims to develop an effective method of doping large area Chemical Vapor Deposition (CVD) graphene using Iron (III) Chloride ...

Song, Yi, S.M. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

43

CO-CATALYTIC ABSORPTION LAYERS FOR CONTROLLED LASER-INDUCED CHEMICAL VAPOR DEPOSITION OF CARBON NANOTUBES  

E-Print Network (OSTI)

The concept of co-catalytic layer structures for controlled laser-induced chemical vapor deposition of carbon nanotubes is established, in which a thin Ta support layer chemically aids the initial Fe catalyst reduction. This enables a significant...

Michaelis, F.B.; Weatherup, R.S.; Bayer, B.C.; Bock, M.C.D; Sugime, H.; Caneva, S.; Robertson, J.; Baumberg, J.J.; Hofmann, S.

2014-02-24T23:59:59.000Z

44

Tunneling characteristics in chemical vapor deposited graphene hexagonal boron nitride graphene junctions  

E-Print Network (OSTI)

1 Tunneling characteristics in chemical vapor deposited graphene ­ hexagonal boron nitride ­ graphene junctions T. Roy1 , L. Liu2 , S. de la Barrera,3 B. Chakrabarti1,4 , Z. R. Hesabi1 , C. A. Joiner1 Abstract: Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate

Feenstra, Randall

45

Computational Analysis and Optimization of a Chemical Vapor Deposition Reactor with  

E-Print Network (OSTI)

Computational Analysis and Optimization of a Chemical Vapor Deposition Reactor with Large and optimization of a three- dimensional model of a horizontal chemical vapor deposition (CVD) reactor used National Laboratories February 9, 2004 Abstract A computational analysis and optimization is presented

46

Optimization of the chemical vapor deposition process for carbon nanotubes fabrication  

E-Print Network (OSTI)

Optimization of the chemical vapor deposition process for carbon nanotubes fabrication M. Grujicica-phase chemistry and surface chemistry model is developed to analyze, at the reactor length scale, chemical vapor (carrier gas) in the presence of cobalt catalytic particles in a cylindrical reactor. The model allows

Grujicic, Mica

47

On the optimization of a dc arcjet diamond chemical vapor deposition reactor  

E-Print Network (OSTI)

On the optimization of a dc arcjet diamond chemical vapor deposition reactor S. W. Reevea) and W. A precursor in our dc arcjet reactor.1 Based on conclusions drawn from that work, an optimization strategy diamond film growth in a dc arcjet chemical vapor deposition reactor has been developed. Introducing

Dandy, David

48

Chemical vapor deposition of amorphous silicon films from disilane  

SciTech Connect

Amorphous silicon films for fabrication of solar cells have been deposited by thermal chemical vapor deposition (CVD) from disilane (Si/sub 2/H/sub 6/) using a tubular flow reactor. A mathematical description for the CVD reactor was developed and solved by a numerical procedure. The proposed chemical reaction network for the model is based on silylene (SiH/sub 2/) insertion in the gas phase and film growth from SiH/sub 2/ and silicon polymers (Si/sub n/N/sub 2n/, n approx. 10). Estimates of the rate constants have been obtained for trisilane decomposition, silicon polymer formation, and polymer dehydrogenation. The silane unimolecular decomposition rate constants were corrected for pressure effects. The model behavior is compared to the experimental results over the range of conditions: reactor temperature (360 to 485/sup 0/C), pressures (2 to 48 torr), and gas holding time (1 to 70 s). Within the above range of conditions, film growth rate varies from 0.01 to 30 A/s. Results indicate that silicon polymers are the main film precursors for gas holding times greater than 3 s. Film growth by silylene only becomes important at short holding times, large inert gas dilution, and positions near the beginning of the reactor hot zone.

Bogaert, R.J.

1986-01-01T23:59:59.000Z

49

Growth of graphene underlayers by chemical vapor deposition  

SciTech Connect

We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called inverted wedding cake stacking in multilayer graphene growth.

Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu, E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa)] [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Charlie Johnson, A. T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)] [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

2013-11-15T23:59:59.000Z

50

Charged impurity-induced scatterings in chemical vapor deposited graphene  

SciTech Connect

We investigate the effects of defect scatterings on the electric transport properties of chemical vapor deposited (CVD) graphene by measuring the carrier density dependence of the magneto-conductivity. To clarify the dominant scattering mechanism, we perform extensive measurements on large-area samples with different mobility to exclude the edge effect. We analyze our data with the major scattering mechanisms such as short-range static scatters, short-range screened Coulomb disorders, and weak-localization (WL). We establish that the charged impurities are the predominant scatters because there is a strong correlation between the mobility and the charge impurity density. Near the charge neutral point (CNP), the electron-hole puddles that are induced by the charged impurities enhance the inter-valley scattering, which is favorable for WL observations. Away from the CNP, the charged-impurity-induced scattering is weak because of the effective screening by the charge carriers. As a result, the local static structural defects govern the charge transport. Our findings provide compelling evidence for understanding the scattering mechanisms in graphene and pave the way for the improvement of fabrication techniques to achieve high-quality CVD graphene.

Li, Ming-Yang; Tang, Chiu-Chun [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Ling, D. C. [Department of Physics, Tamkang University, Tamsui Dist., New Taipei 25137, Taiwan (China); Li, L. J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 11529, Taiwan (China); Chi, C. C.; Chen, Jeng-Chung [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

2013-12-21T23:59:59.000Z

51

Sulfur Impregnation on Activated Carbon Fibers through H2S Oxidation for Vapor Phase  

E-Print Network (OSTI)

Sulfur Impregnation on Activated Carbon Fibers through H2S Oxidation for Vapor Phase Mercury: Sulfur was impregnated onto activated carbon fibers ACFs through H2S oxidation catalyzed by the sorbent CE Database subject headings: Activated carbon; Sulfur; Mercury; Hydrogen sulfides; Oxidation

Borguet, Eric

52

Nickel catalyst faceting in plasma-enhanced direct current chemical vapor deposition of carbon nanofibers  

E-Print Network (OSTI)

1 Nickel catalyst faceting in plasma-enhanced direct current chemical vapor deposition of carbon vapor deposition with Ni catalysts on the top of nanofibers. Transmission electron microscopy was used to study the morphology and crystallography of Ni catalysts, which are essential for the nucleation

Paris-Sud XI, Université de

53

OPTIMAL DESIGN OF A HIGH PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION REACTOR  

E-Print Network (OSTI)

OPTIMAL DESIGN OF A HIGH PRESSURE ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION REACTOR K.J. BACHMANN of computer simulations as an optimal design tool which lessens the costs in time and effort in experimental vapor deposition (HPOMCVD) reactor for use in thin film crystal growth. The advantages of such a reactor

54

Properties of hydrogenated amorphous silicon prepared by chemical vapor deposition  

SciTech Connect

Hydrogenated amorphous silicon (a-Si:H) films were prepared by chemical vapor deposition (CVD) from mixtures of silane, disilane, trisilane, and higher polysilanes in hydrogen carrier gas at 1 atm total pressure, at substrate temperatures from 420--530 /sup 0/C. Experimental parameters are explained and properties as a function of these parameters are shown. The measurements include hydrogen content (by IR), optical, electrical, and photovoltaic properties of the material. In most respects, the CVD material closely resembles the a-Si:H usually prepared by glow discharge. The following differences have been noted: (1) the CVD a-Si:H shows no IR absorption at 840--850 cm/sup -1/, which is consistent with the expected better thermal stability of the CVD material because of the much higher substrate temperatures in the CVD process than in the glow discharge process. (2) The band gap of CVD a-Si:H is lower by about 0.1 eV than glow discharge a-Si:H of the same hydrogen content. Thus, the band gap of CVD a-Si:H is better matched to the solar spectrum than is glow discharge a-Si:H. (3) All three IR absorption bands due to hydrogen are about 20% narrower in the CVD a-Si:H, suggesting a simpler structure. (4) The temperature dependence of the dark conductivity of CVD a-Si:H fits a curve for a single activation energy, in contrast to the more complicated temperature dependence often found in glow discharge a-Si:H, in which two different activation energies are seen at high and low temperatures. This suggests that the conduction mechanism is also simpler in the CVD a-Si:H.

Ellis, F.B. Jr.; Gordon, R.G.; Paul, W.; Yacobi, B.G.

1984-06-15T23:59:59.000Z

55

Simple method for preparing hydrogenated amorphous silicon films by chemical vapor deposition at atmospheric pressure  

SciTech Connect

An inexpensive one-step method is presented for fabricating hydrogenated amorphous silicon (a-Si:H) films with good photovoltaic properties using chemical vapor deposition (CVD) from a mixture of silane, disilane, trisilane, and higher polysilanes in hydrogen at one atmosphere total pressure. The gas mixture is generated by the action of dilute acid on magnesium silicide and used immediately in the CVD process. Thus, elaborate techniques for handling, transporting or storing the pyrophoric polysilanes are avoided. In addition, the method requires no expensive vacuum or electrical equipment. The conditions necessary for high (approx. =10%) hydrogen incorporation and very high deposition rates (50-100 A/sec) are explained. Experimental parameters are explained and properties as a function of these parameters are shown. The measurements include hydrogen content, optical, electrical and photovoltaic properties of the a-Si:H films. A chemical kinetic model is presented for this and other silane and polysilane CVD systems between about 400 and 600/sup 0/C. Both homogeneous and heterogeneous reactions are considered. The model is derived from homogeneous gas-phase silane and polysilane chemistry and predicts, in agreement with our experiments, that the homogeneous gas-phase chemistry determines the a-Si:H film growth rate under a variety of conditions. The model is sufficiently predictive to be useful in determining appropriate experimental conditions. Stable solar cells are proposed for a-Si:H and fluorine doped tin oxide which can be produced by CVD at very high deposition rates. The unstable a-Si:H/tin oxide interface is eliminated by a very thin layer of titanium nitride and oxide between the a-Si:H and tin oxide.

Ellis, F.B. Jr.

1983-01-01T23:59:59.000Z

56

Initiated chemical vapor deposition of polymeric thin films : mechanism and applications  

E-Print Network (OSTI)

Initiated chemical vapor deposition (iCVD) is a novel technique for depositing polymeric thin films. It is able to deposit thin films of application-specific polymers in one step without using any solvents. Its uniqueness ...

Chan, Kelvin, Ph. D. Massachusetts Institute of Technology

2005-01-01T23:59:59.000Z

57

Single- and few-layer graphene by ambient pressure chemical vapor deposition on nickel  

E-Print Network (OSTI)

An ambient pressure chemical vapor deposition (APCVD) process is used to fabricate graphene based films consisting of one to several graphene layers across their area. Polycrystalline Ni thin films are used and the graphene ...

Reina Ceeco, Alfonso

2010-01-01T23:59:59.000Z

58

Plasma Enhanced Chemical Vapor Deposition on Living Substrates: Development, Characterization, and Biological Applications  

E-Print Network (OSTI)

This dissertation proposed the idea of plasma-enhanced chemical vapor deposition on living substrates (PECVD on living substrates) to bridge the gap between the thin film deposition technology and the biological and living substrates. This study...

Tsai, Tsung-Chan 1982-

2012-12-05T23:59:59.000Z

59

Understanding the Nanotube Growth Mechanism: A Strategy to Control Nanotube Chirality during Chemical Vapor Deposition Synthesis  

E-Print Network (OSTI)

during chemical vapor deposition synthesis must focus on controlling the structure of the nucleated nanotube seeds. DFT and RMD simulations demonstrate the viability of using the structures of catalyst particles over which nanotube growth proceeds...

Gomez Gualdron, Diego Armando 1983-

2012-10-26T23:59:59.000Z

60

Bilayer graphene growth by low pressure chemical vapor deposition on copper foil  

E-Print Network (OSTI)

Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer ...

Fang, Wenjing, S.M. Massachusetts Institute of Technology

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Atmospheric pressure chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and ammonia  

E-Print Network (OSTI)

pressure chemical vapor deposition. Experiments were conducted in a belt furnace; static experiments, in particular, is used for tool coating, solar-control films, and micro- electronic applications. Optically

62

Advanced Chemical Heat Pumps Using Liquid-Vapor Reactions  

E-Print Network (OSTI)

ically feasible systems have significant potential advantage over conventional tech nology. An electric drive reactive heat pump can use smaller heat exchangers and compressor than a vapor-compression machine, and have more flexible operating... are discussed, and performance is bounded. A discussion on liquid-vapor equilibria is included as introduction to the systems I- considered. The electric drive heat pump and TA are promising systems; the TA has potential for higher COP than absorption...

Kirol, L.

63

Oxidation of Slurry Aluminide Coatings on Cast Stainless Steel Alloy CF8C-Plus at 800oC in Water Vapor  

SciTech Connect

A new, cast austenitic stainless steel, CF8C-Plus, has been developed for a wide range of high temperature applications, including diesel exhaust components, turbine casings and turbocharger housings. CF8C-Plus offers significant improvements in creep rupture life and creep rupture strength over standard CF8C steel. However, at higher temperatures and in more aggressive environments, such as those containing significant water vapor, an oxidation-resistant protective coating will be necessary. The oxidation behavior of alloys CF8C and CF8C-Plus with various aluminide coatings were compared at 800oC in air plus 10 vol% water vapor. Due to their affordability, slurry aluminides were the primary coating system of interest, although chemical vapor deposition (CVD) and pack cementation coatings were also compared. Additionally, a preliminary study of the low cycle fatigue behavior of aluminized CF8C-Plus was conducted at 800oC. Each type of coating provided substantial improvements in oxidation behavior, with simple slurry aluminides showing very good oxidation resistance after 4,000 h testing in water vapor. Preliminary low cycle fatigue results indicated that thicker aluminide coatings degraded high temperature fatigue properties of CF8C-Plus, whereas thinner coatings did not. Results suggest that appropriately designed slurry aluminide coatings are a viable option for economical, long-term oxidation protection of austenitic stainless steels in water vapor.

Haynes, James A [ORNL; Armstrong, Beth L [ORNL; Dryepondt, Sebastien N [ORNL; Kumar, Deepak [ORNL; Zhang, Ying [Tennessee Technological University

2013-01-01T23:59:59.000Z

64

GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition  

SciTech Connect

Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar GaN-graphene diodes. The suspended graphene remains electrically stable up to 300?C in air. The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications.

Xu, Kun; Xu, Chen, E-mail: xuchen58@bjut.edu.cn; Deng, Jun; Zhu, Yanxu; Guo, Weiling; Mao, Mingming; Xun, Meng; Chen, Maoxing; Zheng, Lei [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China)] [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Xie, Yiyang [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China)] [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China); Sun, Jie, E-mail: jie.sun@chalmers.se [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China) [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Mikroteknologi och Nanovetenskap, Chalmers Tekniska Hgskola AB, Gteborg 41296 (Sweden)

2013-11-25T23:59:59.000Z

65

Chemical vapor detection with a multispectral thermal imager  

E-Print Network (OSTI)

military programs to adapt the FLIR for chemical de- tection.25 A navy FLIR has been deployed for chemical sensing.4 It is a standard common module FLIR modified with bandpass spectral filters. Agent detection

Chang, Chein-I

66

Solar-induced chemical vapor deposition of diamond-type carbon films  

DOE Patents (OSTI)

An improved chemical vapor deposition method for depositing transparent continuous coatings of sp[sup 3]-bonded diamond-type carbon films, comprises: (a) providing a volatile hydrocarbon gas/H[sub 2] reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and (b) directing a concentrated solar flux of from about 40 to about 60 watts/cm[sup 2] through said reactant mixture to produce substrate temperatures of about 750 C to about 950 C to activate deposition of the film on said substrate. 11 figs.

Pitts, J.R.; Tracy, C.E.; King, D.E.; Stanley, J.T.

1994-09-13T23:59:59.000Z

67

Solar-induced chemical vapor deposition of diamond-type carbon films  

DOE Patents (OSTI)

An improved chemical vapor deposition method for depositing transparent continuous coatings of sp.sup.3 -bonded diamond-type carbon films, comprising: a) providing a volatile hydrocarbon gas/H.sub.2 reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux of from about 40 to about 60 watts/cm.sup.2 through said reactant mixture to produce substrate temperatures of about 750.degree. C. to about 950.degree. C. to activate deposition of the film on said substrate.

Pitts, J. Roland (Lakewood, CO); Tracy, C. Edwin (Golden, CO); King, David E. (Lakewood, CO); Stanley, James T. (Beaverton, OR)

1994-01-01T23:59:59.000Z

68

Cooperative Island Growth of Large Area Single-Crystal Graphene by Chemical Vapor Deposition on Cu  

SciTech Connect

We describe a two-step approach for suppressing nucleation of graphene on Cu using chemical vapor deposition. In the first step, as received Cu foils are oxidized in air at temperatures up to 500 C to remove surface impurities and to induce the regrowth of Cu grains during subsequent annealing in H2 flow at 1040 C prior to graphene growth. In the second step, transient reactant cooling is performed by using a brief Ar pulse at the onset of growth to induce collisional deactivation of the carbon growth species. The combination of these two steps results in a three orders of magnitude reduction in the graphene nucleation density, enabling the growth of millimeter-size single crystal graphene grains. A kinetic model shows that suppressing nucleation promotes a cooperative island growth mode that favors the formation of large area single crystal graphene, and it is accompanied by a roughly 3 orders of magnitude increase in the reactive sticking probability of methane compared to that in random nucleation growth.

Regmi, Murari [Oak Ridge National Laboratory (ORNL); Rouleau, Christopher [Oak Ridge National Laboratory (ORNL); Puretzky, Alexander A [ORNL; Ivanov, Ilia N [ORNL; Geohegan, David B [ORNL; Chen, Jihua [ORNL; Eastman, Jeffrey [Argonne National Laboratory (ANL); Eres, Gyula [ORNL

2014-01-01T23:59:59.000Z

69

Formation of Nickel Silicide from Direct-liquid-injection Chemical-vapor-deposited Nickel Nitride Films  

SciTech Connect

Smooth, continuous, and highly conformal nickel nitride (NiN{sub x}) films were deposited by direct liquid injection (DLI)-chemical vapor deposition (CVD) using a solution of bis(N,N{prime}-di-tert-butylacetamidinato)nickel(II) in tetrahydronaphthalene as the nickel (Ni) source and ammonia (NH{sub 3}) as the coreactant gas. The DLI-CVD NiNx films grown on HF-last (100) silicon and on highly doped polysilicon substrates served as the intermediate for subsequent conversion into nickel silicide (NiSi), which is a key material for source, drain, and gate contacts in microelectronic devices. Rapid thermal annealing in the forming gas of DLI-CVD NiNx films formed continuous NiSi films at temperatures above 400 C. The resistivity of the NiSi films was 15{mu}{Omega} cm, close to the value for bulk crystals. The NiSi films have remarkably smooth and sharp interfaces with underlying Si substrates, thereby producing contacts for transistors with a higher drive current and a lower junction leakage. Resistivity and synchrotron X-ray diffraction in real-time during annealing of NiNx films showed the formation of a NiSi film at about 440 C, which is morphologically stable up to about 650 C. These NiSi films could find applications in future nanoscale complementary metal oxide semiconductor devices or three-dimensional metal-oxide-semiconductor devices such as Fin-type field effect transistors for the 22 nm technology node and beyond.

Li, Z.; Gordon, R; Li, H; Shenai, D; Lavoie, C

2010-01-01T23:59:59.000Z

70

Distributed Porosity as a Control Parameter for Oxide Thermal Barriers Made by Physical Vapor Deposition  

E-Print Network (OSTI)

Anthony G. Evans* Materials Institute, Princeton University, Princeton, New Jersey 08544 Thermal barrier and generating new thermal resistance solutions, as appropri- ate. A continuum heat flow analysis is usedDistributed Porosity as a Control Parameter for Oxide Thermal Barriers Made by Physical Vapor

Wadley, Haydn

71

Influence of gas composition on wafer temperature in a tungsten chemical vapor deposition reactor: Experimental measurements, model  

E-Print Network (OSTI)

Influence of gas composition on wafer temperature in a tungsten chemical vapor deposition reactor-wafer, lamp-heated chemical vapor deposition system were used to study the wafer temperature response to gas composition. A physically based simulation procedure for the process gas and wafer temperature was developed

Rubloff, Gary W.

72

CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION  

E-Print Network (OSTI)

CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION Barbara Terheiden,1* Thomas Kunz,2 Ingo Burkert2 , Renate Horbelt,1, D-91058 Erlangen, Germany ABSTRACT: Convection assisted chemical vapor deposition (CoCVD) is applied

73

Pulsed plasma-Used injection sources for remote plasma activated chemical vapor deposition  

E-Print Network (OSTI)

Pulsed plasma- Used injection sources for remote plasma activated chemical vapor deposition Mark J, Urbana, Illinois 61801 (Received 21 October 1992; accepted for publication 12 January 1993) Remote plasma the substrate is immersed in the plasma. This selectivity can be compromised if the deposition gases, which

Kushner, Mark

74

Cobalt Ultrathin Film Catalyzed Ethanol Chemical Vapor Deposition of Single-Walled Carbon Nanotubes  

E-Print Network (OSTI)

Cobalt Ultrathin Film Catalyzed Ethanol Chemical Vapor Deposition of Single-Walled Carbon Nanotubes (SWNTs) using a cobalt ultrathin film (1 nm) as the catalyst and ethanol as carbon feedstock flow during the growth. The trace amount of self-contained water (0.2-5 wt %) in ethanol may act

Hone, James

75

Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire  

E-Print Network (OSTI)

Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films Cedex 9, France (Dated: 15 March 2011) Uniform single layer graphene was grown on single-crystal Ir. These graphene layers have a single crystallographic orientation and a very low density of defects, as shown

Boyer, Edmond

76

Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition  

E-Print Network (OSTI)

Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor) In this letter we demonstrate the use of oxygen as a dopant in silicon to create semi-insulating, crystalline of the films exhibit classical characteristics of space-charge-limited current associated with insulators

77

An atomic-scale analysis of catalytically-assisted chemical vapor deposition of carbon nanotubes  

E-Print Network (OSTI)

An atomic-scale analysis of catalytically-assisted chemical vapor deposition of carbon nanotubes M Growth of carbon nanotubes during transition-metal particles catalytically-assisted thermal decomposition of various nanotube surface and edge reactions (e.g. adsorption of hydrocarbons and hydrogen onto the surface

Grujicic, Mica

78

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma  

E-Print Network (OSTI)

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency Semiconductor, Eden Prairie, MN, USA Received 10 July 2002; accepted 14 July 2002 Abstract Silicon carbide films; Nanomaterials; Silicon carbide; Thermal plasmas; Thin films; Si tetrachlorine precursor Silicon carbide has

Zachariah, Michael R.

79

Initiated chemical vapor deposition of fluoropolymer coatings for the surface modification of complex geometries  

E-Print Network (OSTI)

Initiated chemical vapor deposition (iCVD) is a one-step, soventless process that can be used to produce polymeric thin films. The iCVD technique has been used to polymerize a wide variety of vinyl monomers such as glycidyl ...

Gupta, Malancha, 1980-

2007-01-01T23:59:59.000Z

80

Formation of Nickel Silicide from Direct-Liquid-Injection Chemical-Vapor-Deposited Nickel Nitride Films  

E-Print Network (OSTI)

. Published April 28, 2010. Metal silicides such as TiSi2 and CoSi2 have been commonly used as the contactsFormation of Nickel Silicide from Direct-Liquid-Injection Chemical-Vapor-Deposited Nickel Nitride as the intermediate for subsequent conversion into nickel silicide NiSi , which is a key material for source, drain

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Low temperature junction growth using hot-wire chemical vapor deposition  

DOE Patents (OSTI)

A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

2014-02-04T23:59:59.000Z

82

Chemical vapor deposition of W-Si-N and W-B-N  

DOE Patents (OSTI)

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.

Fleming, J.G.; Roherty-Osmun, E.L.; Smith, P.M.; Custer, J.S.; Jones, R.V.; Nicolet, M.; Madar, R.; Bernard, C.

1999-06-29T23:59:59.000Z

83

Parallel Reacting Flow Calculations for Chemical Vapor Deposition Reactor Design 1  

E-Print Network (OSTI)

National Laboratories Albuquerque, NM 87185­1111 (To be published in Proceedings of the International at the synthesis of two important research areas: 3D flow and transport modeling of reactors and the simulationParallel Reacting Flow Calculations for Chemical Vapor Deposition Reactor Design 1 Andrew G

Devine, Karen

84

Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene  

E-Print Network (OSTI)

Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene a scalable method to produce large-area graphene, CVD-grown graphene has heretofore exhibited inferior of CVD-grown graphene in which two important sources of disorder, namely grain boundaries and processing

Hone, James

85

Compensator Control For Chemical Vapor Deposition Film Growth Using Reduced Order Design Models  

E-Print Network (OSTI)

in a high pressure chemical vapor deposition (HPCVD) reactor that in­ cludes multiple species and controls optoelectronic integrated circuits. This can sometimes be addressed, in part, through open­loop optimization [7 reactor with real­time sensing and control as an innovative feature of this proto­ type reactor. Previous

86

Self-Limiting Chemical Vapor Deposition Growth of Monolayer Graphene from Ethanol  

E-Print Network (OSTI)

carbide,8 to chemical vapor deposition (CVD) of hydrocarbon precursors on transition metals,9-13 economic up to wafer scale,14,15 nickel and copper are the two most commonly used metal substrates. DueC) restricts the growth of graphene to the metal surface.12,17 The uniformity and high quality of the resultant

Maruyama, Shigeo

87

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular  

E-Print Network (OSTI)

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections Tevye widths of 15-200 nm. Transmission electron microscopy confirmed that the wires were single as a carrier gas, was percolated through the TMG precursor and coupled with a second nitrogen line to give

Yang, Peidong

88

In-reactor oxidation of zircaloy-4 under low water vapor pressures  

SciTech Connect

Complementary in- and ex-reactor oxidation tests have been performed to evaluate the oxidation and hydrogen absorption performance of Zircaloy-4 (Zr-4) under relatively low partial pressures (300 and 1000 Pa) of water vapor at specified test temperatures (330 and 370 C). Data from these tests will be used to support the fabrication of components intended for isotope-producing targets and provide information regarding the temperature and pressure dependence of oxidation and hydrogen absorption of Zr- 4 over the specified range of test conditions. Comparisons between in- and ex-reactor test results were performed to evaluate the influence of irradiation.

Walter G. Luscher; David J. Senor; Keven K. Clayton; Glen R. Longhurst

2015-01-01T23:59:59.000Z

89

A tunable MWIR laser remote sensor for chemical vapor detection  

Science Journals Connector (OSTI)

The Air Force vision for Global Virtual Presence suggests a need for active remote sensing systems that provide both global coverage and the ability to detect multiple gaseous chemical species at low concentration from a significant standoff distance. The system will need to have acceptable weight volume and power characteristics as well as a long operating lifetime for integration with various surveillance platforms. Laser based remote sensing systems utilizing the differential absorption lidar (DIAL) technique are promising for long range chemical sensing applications. Recent advancements in pulsed diode pumped solid state laser (DPSSL) technology and in tunable optical parametric oscillators (OPO) make broadly tunable laser transmitters possible for the DIAL system. Also the characteristic narrow spectral bandwidth of these laser devices provides high measurement sensitivity and spectral selectivity with the potential to avoid interfering species. Rocketdyne has built and tested a tunable midwave infrared (MWIR) DIAL system using DPSSL/OPO technology. The key to the system is a novel tuning and line narrowing technology developed for the OPO. The tuning system can quickly adjust to the desired wavelength and precisely locate a narrow spectral feature of interest. Once the spectral feature is located a rapid dither tuning technique is employed. The laser pulses are tuned on and off the spectral resonance of a molecule with precise and repeatable performance as required to make the DIAL measurement. To date the breadboard system has been tested by measuring methane ethane and sulfur dioxide in a calibrated gas cell at a range of 60 meters.

Thomas L. Bunn; Patricia M. Noblett; William D. Otting

1998-01-01T23:59:59.000Z

90

Mat. Res. Soc. Symp. Proc. Vol. 612 2000 Materials Research Society VOLATILE LIQUID PRECURSORS FOR THE CHEMICAL VAPOR DEPOSITION  

E-Print Network (OSTI)

. These tungsten oxide films can be used as part of electrochromic windows, mirrors or displays. Physical in microelectronics.5 CVD using both W(CO)6 vapor and oxygen gas, O2, has produced electrochromic films of tungsten

91

Proposed Occupational Exposure Limits for Non-Carcinogenic Hanford Waste Tank Vapor Chemicals  

SciTech Connect

A large number of volatile chemicals have been identified in the headspaces of tanks used to store mixed chemical and radioactive waste at the U.S. Department of Energy (DOE) Hanford Site, and there is concern that vapor releases from the tanks may be hazardous to workers. Contractually established occupational exposure limits (OELs) established by the Occupational Safety and Health Administration (OSHA) and American Conference of Governmental Industrial Hygienists (ACGIH) do not exist for all chemicals of interest. To address the need for worker exposure guidelines for those chemicals that lack OSHA or ACGIH OELs, a procedure for assigning Acceptable Occupational Exposure Limits (AOELs) for Hanford Site tank farm workers has been developed and applied to a selected group of 57 headspace chemicals.

Poet, Torka S.; Timchalk, Chuck

2006-03-24T23:59:59.000Z

92

Investigations of chemical vapor deposition of GaN using synchrotron radiation  

SciTech Connect

The authors apply synchrotron x-ray analysis techniques to probe the surface structure of GaN films during synthesis by metal-organic chemical vapor deposition (MOCVD). Their approach is to observe the evolution of surface structure and morphology in real time using grazing incidence x-ray scattering (GIXS). This technique combines the ability of x-rays to penetrate the chemical vapor deposition environment for in situ measurements, with the sensitivity of GIXS to atomic scale structure. In this paper they present examples from some of their studies of growth modes and surface evolution as a function of process conditions that illustrate the capabilities of synchrotron x-ray analysis during MOCVD growth. They focus on studies of the homoepitaxial growth mode, island coarsening dynamics, and effects of impurities.

Thompson, C.; Stephenson, G. B.; Eastman, J. A.; Munkholm, A.; Auciello, O.; Murty, M. V. R.; Fini, P.; DenBaars, S. P.; Speck, J. S.

2000-05-25T23:59:59.000Z

93

Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications  

SciTech Connect

Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2010, and the LHC upgrades expected in 2015, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed and operational in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

Rainer Wallny

2012-10-15T23:59:59.000Z

94

Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications  

SciTech Connect

Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2009, and the LHC upgrades expected in 2013, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

Harris Kagan; K.K. Gan; Richard Kass

2009-03-31T23:59:59.000Z

95

Metal organic chemical vapor deposition of 111-v compounds on silicon  

DOE Patents (OSTI)

Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

Vernon, Stanley M. (Wellesley, MA)

1986-01-01T23:59:59.000Z

96

Gas chromatographic-mass spectrometric characterization of an oil aerosol-vapor microbial disinfectant .  

E-Print Network (OSTI)

??"This thesis focuses on chemical characterization studies of disinfectant vapors generated from thermal oxidation of mineral oil and biogenic oil esters. The disinfection technique holds (more)

Wadhwa, Prakash, 1980-

2005-01-01T23:59:59.000Z

97

The growth characteristics of microcrystalline Si thin film deposited by atmospheric pressure plasma-enhanced chemical vapor deposition  

Science Journals Connector (OSTI)

Microcrystalline silicon thin film was grown by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) ... with a cylindrical rotary electrode supplied with 150 MHz very-high-frequency power. T...

Jung-Dae Kwon

2013-11-01T23:59:59.000Z

98

High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)  

Science Journals Connector (OSTI)

Hydrogenated microcrystalline silicon (?c-Si:H) thin films were prepared by high-pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition ra...

BingQing Zhou; MeiFang Zhu; FengZhen Liu

2008-04-01T23:59:59.000Z

99

Continuous growth of single-wall carbon nanotubes using chemical vapor deposition  

DOE Patents (OSTI)

The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

Grigorian, Leonid (Raymond, OH); Hornyak, Louis (Evergreen, CO); Dillon, Anne C (Boulder, CO); Heben, Michael J (Denver, CO)

2008-10-07T23:59:59.000Z

100

Continuous growth of single-wall carbon nanotubes using chemical vapor deposition  

DOE Patents (OSTI)

The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

Grigorian, Leonid; Hornyak, Louis; Dillon, Anne C; Heben, Michael J

2014-09-23T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Improved process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition  

DOE Patents (OSTI)

A specially designed apparatus provides a steep thermal gradient across the thickness of fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

Lackey, W.J. Jr.; Caputo, A.J.

1984-09-07T23:59:59.000Z

102

Tunneling characteristics in chemical vapor deposited graphenehexagonal boron nitridegraphene junctions  

SciTech Connect

Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphenehexagonal boron nitridegraphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphenehexagonal boron nitridegraphene devices. Density-of-states features are observed in the tunneling characteristics of the devices, although without large resonant peaks that would arise from lateral momentum conservation. The lack of distinct resonant behavior is attributed to disorder in the devices, and a possible source of the disorder is discussed.

Roy, T.; Hesabi, Z. R.; Joiner, C. A.; Vogel, E. M. [School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332 (United States); Liu, L.; Gu, G. [Department of Electrical Engineering and Computer Science, University of Tennessee, 1520 Middle Drive, Knoxville, Tennessee 37996 (United States); Barrera, S. de la; Feenstra, R. M. [Department of Physics, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania 15213 (United States); Chakrabarti, B. [School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Rd., Richardson, Texas 75080 (United States)

2014-03-24T23:59:59.000Z

103

Role of oxygen vacancies in water vapor chemisorption and CO oxidation on titania  

SciTech Connect

Titanium dioxide is widely used as support for various important catalysts. Although nonstoichiometric titania behaves as an n-type semiconductor, the nature of the defect sites is not yet fully understood. In the present investigation the water vapor adsorption and carbon monoxide oxidation on TiO[sub 2] is explained considering oxygen vacancies as the major defect. It is also shown that incorporation of an Al[sup 3+] ion in TiO[sub 2] reduces the concentration of oxygen ion vacancies and inhibits the transformation of anatase to rutile.

Sengupta, G.; Chatterjee, R.N.; Maity, G.C. (Project and Development India Ltd. Sindri, Dhanbad, Bihar (India)); Satyanarayna, C.V.V. (RSIC, Bombay (India). Indian Inst. of Tech. Powai)

1995-03-01T23:59:59.000Z

104

Characterization and tribological application of diamond-like carbon (DLC) films prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique  

Science Journals Connector (OSTI)

Diamond-like carbon (DLC) films were successfully prepared on glass substrates and surfaces of selenium drums via radio frequency plasma enhanced chemical vapor deposition method. The...

Ning Cao; Zhen-yi Fei; Yong-xin Qi; Wen-wen Chen

2009-12-01T23:59:59.000Z

105

Gas-phase silicon atom densities in the chemical vapor deposition of silicon from silane  

SciTech Connect

Silicon atom number density profiles have been measured using laser-induced fluorescence during the chemical vapor deposition of silicon from silane. Measurements were obtained in a rotating-disk reactor as a function of silane partial pressure and the amount of hydrogen added to the carrier gas. Absolute number densities were obtained using an atomic absorption technique. Results were compared with calculated density profiles from a model of the coupled fluid flow, gas-phase and surface chemistry for an infinite-radius rotating disk. An analysis of the reaction mechanism showed that the unimolecular decomposition of SiH{sub 2} is not the dominant source of Si atoms. Profile shapes and positions, and all experimental trends are well matched by the calculations. However, the calculated number density is up to 100 times smaller than measured.

Coltrin, M.E.; Breiland, W.G.; Ho, P.

1993-12-31T23:59:59.000Z

106

Characterization of Chemically Vapor Deposited Silicon Nitride Films from Disilane and Ammonia  

Science Journals Connector (OSTI)

Amorphous silicon nitride films a:SiNx were prepared by low pressure chemical vapor deposition (LPCVD) from disilane ( Si2H6) and ammonia ( NH3). Most of the depositions were performed at 600 C with various NH3/Si2H6 gas ratios ranging from 4 to 50. Different deposits with composition (x= N/Si) ranging from silicon-rich to stoichiometric silicon nitride were characterized by means of infrared spectroscopy (FTIR), ellipsometry, electron energy loss spectroscopy (EELS), and their structure analysed by transmission electron microscopy (TEM). Transmission infrared measurements showed low hydrogen content (x= N/Si) and density of the films were correlated with their refractive index and discussed.

Redhouane Henda; Larbi Laanab; Emmanuel Scheid; Robert Fourmeaux

1995-01-01T23:59:59.000Z

107

Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs  

Science Journals Connector (OSTI)

Disilane (Si2H6) is presented as a new silicon doping source in the metalorganic chemical vapor deposition of GaAs together with comparison results obtained using the conventional silane (SiH4) doping source. The dopingcharacteristics of disilane were studied over a wide range of growth conditions: temperature gas phase stoichiometry and disilane concentration in the growth ambient. Silicon incorporation by means of disilane pyrolysis showed no temperature dependence in sharp contrast to the strong temperature activated dependence found when employing silane. The decomposition reaction of disilane proved to be very efficient reducing the amount of dopant gas required by about two orders of magnitude at the lower growth temperatures. Electrical measurements on disilane?doped GaAs yield the same high mobilities as obtained in silane?doped GaAs films indicative of low compensation.

T. F. Kuech; B. S. Meyerson; E. Veuhoff

1984-01-01T23:59:59.000Z

108

Selective charge doping of chemical vapor deposition-grown graphene by interface modification  

SciTech Connect

The doping and scattering effect of substrate on the electronic properties of chemical vapor deposition (CVD)-grown graphene are revealed. Wet etching the underlying SiO{sub 2} of graphene and depositing self-assembled monolayers (SAMs) of organosilane between graphene and SiO{sub 2} are used to modify various substrates for CVD graphene transistors. Comparing with the bare SiO{sub 2} substrate, the carrier mobility of CVD graphene on modified substrate is enhanced by almost 5-fold; consistently the residual carrier concentration is reduced down to 10{sup 11}?cm{sup ?2}. Moreover, scalable and reliable p- and n-type graphene and graphene p-n junction are achieved on various silane SAMs with different functional groups.

Wang, Shengnan, E-mail: wang.shengnan@lab.ntt.co.jp; Suzuki, Satoru; Furukawa, Kazuaki; Orofeo, Carlo M.; Takamura, Makoto; Hibino, Hiroki [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)] [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)

2013-12-16T23:59:59.000Z

109

In situ nitrogen-doped graphene grown from polydimethylsiloxane by plasma enhanced chemical vapor deposition  

SciTech Connect

Due to its unique electronic properties and wide spectrum of promising applications, graphene has attracted much attention from scientists in various fields. Control and engineering of graphenes semiconducting properties is considered to be the key of its applications in electronic devices. Here, we report a novel method to prepare in situ nitrogen-doped graphene by microwave plasma assisted chemical vapor deposition (CVD) using PDMS (Polydimethylsiloxane) as a solid carbon source. Based on this approach, the concentration of nitrogen-doping can be easily controlled via the flow rate of nitrogen during the CVD process. X-ray photoelectron spectroscopy results indicated that the nitrogen atoms doped into graphene lattice were mainly in the forms of pyridinic and pyrrolic structures. Moreover, first-principles calculations show that the incorporated nitrogen atoms can lead to p-type doping of graphene. This in situ approach provides a promising strategy to prepare graphene with controlled electronic properties.

Wang, Chundong; Zhou, Yungang; He, Lifang; Ng, Tsz-Wai; Hong, Guo; Wu, Qi-Hui; Gao, Fei; Lee, Chun-Sing; Zhang, Wenjun

2013-01-21T23:59:59.000Z

110

Structure control of carbon nanotubes using radio-frequency plasma enhanced chemical vapor deposition  

Science Journals Connector (OSTI)

Carbon nanotube structures such as tube diameter, growth site, and formation density are controlled using radio-frequency (RF, 13.56 MHz) plasma enhanced chemical vapor deposition (RF-PECVD) method. We have produced uniformly well-aligned multi-walled carbon nanotubes (MWNTs) grown over the large scale area and linearly arrayed \\{MWNTs\\} grown in a selected area without any highly-sophisticated patterning process. In our RF-PECVD experiment, furthermore, individually grown single-walled carbon nanotubes (SWNTs) or their thin bundles are synthesized for the first time within the scope of the PECVD methods. These results indicate that PECVD method provides the high potential for the further development of nano-technology.

T. Kato; G.-H. Jeong; T. Hirata; R. Hatakeyama

2004-01-01T23:59:59.000Z

111

Capillary - Discharge Based Hand-Held Detector For Chemical Vapor Monitoring  

DOE Patents (OSTI)

A handheld/portable detector for chemical vapor monitoring includes a housing and a discharge chamber that is established therein. The plasma discharge has a relatively small volume, e.g., in the micro-liter range. A first electrode and a second electrode are disposed within the discharge chamber and a discharge gap is established therebetween. A sample gas tube is in fluid communication with the discharge chamber and provides a sample gas to the discharge chamber. Also, a plasma gas tube is in fluid communication with the discharge chamber and provides a plasma gas thereto. Accordingly, the plasma gas can be used to maintain microplasma discharge between the electrodes and the sample gas can be introduced into the microplasma discharge. A spectrometer optically connected to the handheld/portable detector is used to measure the radiation emitted by the sample gas when subjected to the microplasma discharge.

Duan, Yixiang (White Rock, NM)

2005-05-31T23:59:59.000Z

112

Life cycle cost study for coated conductor manufacture by metal organic chemical vapor deposition  

SciTech Connect

The purpose of this report is to calculate the cost of producing high temperature superconducting wire by the Metal Organic Chemical Vapor Deposition (MOCVD) process. The technology status is reviewed from the literature and a plant conceptual design is assumed for the cost calculation. The critical issues discussed are the high cost of the metal organic precursors, the material utilization efficiency and the capability of the final product as measured by the critical current density achieved. Capital, operating and material costs are estimated and summed as the basis for calculating the cost per unit length of wire. Sensitivity analyses of key assumptions are examined to determine their effects on the final wire cost. Additionally, the cost of wire on the basis of cost per kiloampere per meter is calculated for operation at lower temperatures than the liquid nitrogen boiling temperature. It is concluded that this process should not be ruled out on the basis of high cost of precursors alone.

Chapman, J.N.

1999-07-13T23:59:59.000Z

113

Chemical vapor deposition of refractory ternary nitrides for advanced diffusion barriers  

SciTech Connect

Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.

Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth; Smith, Paul Martin

1998-09-22T23:59:59.000Z

114

Oxidation of zirconium alloys in 2.5 kPa water vapor for tritium readiness.  

SciTech Connect

A more reactive liner material is needed for use as liner and cruciform material in tritium producing burnable absorber rods (TPBAR) in commercial light water nuclear reactors (CLWR). The function of these components is to convert any water that is released from the Li-6 enriched lithium aluminate breeder material to oxide and hydrogen that can be gettered, thus minimizing the permeation of tritium into the reactor coolant. Fourteen zirconium alloys were exposed to 2.5 kPa water vapor in a helium stream at 300 C over a period of up to 35 days. Experimental alloys with aluminum, yttrium, vanadium, titanium, and scandium, some of which also included ternaries with nickel, were included along with a high nitrogen impurity alloy and the commercial alloy Zircaloy-2. They displayed a reactivity range of almost 500, with Zircaloy-2 being the least reactive.

Mills, Bernice E.

2007-11-01T23:59:59.000Z

115

Growth of crystalline X-Sic on Si at reduced temperatures by chemical vapor deposition from `silacycllobutane  

E-Print Network (OSTI)

, and TPS resulted in single crystal layer" on Si ( 111) only up to a thickness of 2000 h;. Highly orientedGrowth of crystalline X-Sic on Si at reduced temperatures by chemical vapor deposition from grown by SCB at a temperature of 800 "C. The progress of SiC/Si heterojunction devices has been C3HsSiH2

Steckl, Andrew J.

116

Applications of direct chemical oxidation to demilitarization  

SciTech Connect

Research is reported concerning an aqueous process for oxidative destruction of solid- and liquid organic wastes, including ongoing work relevant to demilitarization This process uses acidified ammonium- or sodium peroxydisulfate and operates at ambient pressure and at temperatures of 80- 100 C The oxidant may be regenerated by electrolysis of the sulfate by- product at Pt anodes at roughly 80% coulombic efficiency, even in the presence of inorganic contaminants (e g , nitrate, phosphate or chloride) found in the original waste and entrained in the recycle stream Integral rate constants have been determined for the oxidation of diverse organic compounds at low concentrations (50 ppm, C), with rate constants (based on equivalents) of 0 004-O 02 miri Higher concentrations generally react at a 2-4X higher rate. The process has been carried through full- scale laboratory tests and initial pilot plant tests on chlorinated solvents, using a hydrolysis pretreatment Integral rate data indicate throughput rates of about 200 kg- C/m3-day The process may benefit the demilitarization efforts in various specialized applications destruction of solvents; destruction of trace propellants and explosives in shell casings remaining after bulk removal, destruction of red and pink waters, in situ remediation of soils at open pit burning/detonation sites; and as a regenerative filter for offgas carrying toxic or explosive substances.

Cooper, J.F., LLNL

1998-06-01T23:59:59.000Z

117

Growth of Fe3N films via chemical vapor deposition of iron acetylacetonate and anhydrous ammonia  

Science Journals Connector (OSTI)

Polycrystalline Fe3N films have been grown via chemical vapor deposition (CVD) on 50-?m thick polycrystalline Ti substrates using iron acetylacetonate (IAA) and anhydrous ammonia (NH3) in a cold-wall vertical pancake-style reactor. X-ray diffraction data indicated that single phase Fe3N was present in films deposited at and above 600C; below this temperature no deposition occurred. The composition of the Fe3N films did not vary with changes in the deposition temperature, the NH3 flow rate or the deposition rate at a constant deposition pressure of 100 Torr. The surface macrostructure of the as-deposited films was independent of the deposition temperature and was very similar to that of the uncoated Ti substrate. The microstructure of the films was porous with a thickness variation of ?1 ?m across the surface of the films. Larger grains were produced at 600 and 800C, while smaller and more uniform grains were produced at 700C. Energy dispersive X-ray data indicated that films deposited at and above 600C contained low levels of both carbon and oxygen.

S.L. Roberson; D. Finello; A.D. Banks; R.F. Davis

1998-01-01T23:59:59.000Z

118

Chemical vapor deposition of amorphous semiconductor films. Semiannual report, 1 May 1984-31 October 1984  

SciTech Connect

This report describes the results of research done by the Institute of Energy Conversion for the Solar Energy Research Institute in 1984 on high-efficiency, stable, amorphous silicon solar cells, fabricated by chemical vapor deposition (CVD) from disilane at high growth rates. The kinetics of CVD with higher order silanes were modelled for a tubular reactor with static substrates. A gas-phase reaction network was adopted, based on published silylene insertion and decomposition pathways. Mass balances for hydrogen and all saturated silanes through octasilane were derived. Boron-doped a-Si:H p-layers were deposited by CVD at 200/sup 0/ to 250/sup 0/C. Band gap and conductivity depended strongly on the diborane fraction in the feed gas, independent of substrate temperature. The effects of intrinsic layer deposition temperature and growth rate on material properties and device performance were studied. Cell parameters of p-i-n cells were correlated with i-layer deposition temperature and growth rate. Fill factor and short-circuit current depended on deposition conditions, while open-circuit voltage did not. Effects of diborane additions to the feed gas during i-layer deposition were studied. Experimental evidence and calculations indicate high resistance at the back contact.

Baron, B.N.; Rocheleau, R.E.; Hegedus, S.S.

1985-06-01T23:59:59.000Z

119

Gas-phase reaction study of disilane pyrolysis: Applications to low pressure chemical vapor deposition  

SciTech Connect

The gas-phase thermal reactions during disilane decomposition at low pressure chemical vapor deposition conditions were studied from 300 to 1,000 K using resonance enhanced multiphoton ionization (REMPI) and multiphoton ionization (MPI). REMPI of gas-phase Si, mass 28, was detected from 640 to 840 K and 1 to 10 Torr, with a maximum signal intensity between 700 to 720 K. During disilane decomposition, no SiH (427.8 nm), SiH[sub 2] (494-515 nm), or SiH[sub 3] (419.0 nm) was detected. MPI of higher silanes, silenes, and silylenes were detected through mass fragments 2, 32, and 60; these species reached a maximum signal intensity 20 degrees prior to the mass-28 maximum. Modeling studies that included a detailed low pressure gas-phase kinetic scheme predict relative gas-phase partial pressures generated during disilane pyrolysis. The model predicted experimental trends in the Si partial pressure and the higher silane, silene, and silylene partial pressures.

Johannes, J.E.; Ekerdt, J.G. (Univ. of Texas, Austin, TX (United States). Dept. of Chemical Engineering)

1994-08-01T23:59:59.000Z

120

Hydrogenated amorphous silicon films produced by chemical vapor deposition: Final report  

SciTech Connect

Hydrogenated amorphous silicon (a-Si:H) is a technologically important semiconductor, well-suited for solar photovoltaic energy conversion and thin film device applications. While the glow discharge technique is widely used for the deposition of a-Si:H films, this work is focused on the use of the chemical vapor deposition (CVD) technique, i.e., the thermal decomposition of disilane and higher silanes, for the deposition of a-Si:H films. A simple technique for the preparation of disilane and higher silanes by using an electric discharge in monosilane under atmospheric pressure has been developed, and the discharge product can be used directly for the deposition process. The important parameters of the CVD process including the substrate temperature, the composition and flow rate of the reaction mixture, and the nature of the diluent gas for disilane, have also been investigated. The deposition rate of a-Si:H films in a helium atmosphere is considerably higher than that in a hydrogen atmosphere, and the CVD process in a helium atmosphere is well-suited for the deposition of thick a-Si:H films. The a-Si:H films deposited under various conditions have been characterized by the photoconductivity, dissolution rate, optical absorption, mechanical stress, gap state density, minority carrier diffusion length, and stability measurements. On the basis of these measurements, a-Si:H films deposited by the thermal decomposition of disilane in a helium atmosphere exhibit better structural and electronic properties than those deposited in a hydrogen atmosphere.

Not Available

1987-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
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121

Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition  

SciTech Connect

We have grown graphene by chemical vapor deposition (CVD) and transferred it onto Si/SiO{sub 2} substrates to make tens of micron scale devices for Raman spectroscopy study. The effect of electron beam (e-beam) irradiation of various doses (600 to 12 000 {mu}C/cm{sup 2}) on CVD grown graphene has been examined by using Raman spectroscopy. It is found that the radiation exposures result in the appearance of the strong disorder D band attributed the damage to the lattice. The evolution of peak frequencies, intensities, and widths of the main Raman bands of CVD graphene is analyzed as a function of defect created by e-beam irradiation. Especially, the D and G peak evolution with increasing radiation dose follows the amorphization trajectory, which suggests transformation of graphene to the nanocrystalline and then to amorphous form. We have also estimated the strain induced by e-beam irradiation in CVD graphene. These results obtained for CVD graphene are in line with previous findings reported for the mechanically exfoliated graphene [D. Teweldebrhan and A. A. Balandin, Appl. Phys. Lett. 94, 013101 (2009)]. The results have important implications for CVD graphene characterization and device fabrication, which rely on the electron microscopy.

Iqbal, M. Z.; Kumar Singh, Arun; Iqbal, M. W.; Seo, Sunae; Eom, Jonghwa [Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)

2012-04-15T23:59:59.000Z

122

High-temperature stress measurement on chemical-vapor-deposited tungsten silicide and tungsten films  

SciTech Connect

Stresses in chemical-vapor-deposited tungsten silicide and tungsten films at high temperatures were measured. Tungsten silicide films were formed from WF/sub 6/ and SiH/sub 4/ or Si/sub 2/H/sub 6/. Tungsten films were formed from WF/sub 6/ and H/sub 2/. The stress in tungsten silicide films is tensile and in the order of 10/sup 9/--10/sup 10/ dynes/cm/sup 2/. For a composition ratio of Si/Wless than or equal to2.6, the stress of a film of more than 1000 A has a maximum at about 500 /sup 0/C. On the other hand, for a composition Si/W>2.9, the stress has no maximum. The maximum of the stress is caused by crystallization of the film. The stress has two components. One component is related to the difference of the thermal expansion coefficients between the film and the Si substrate. Another is related to the film crystallization. It was found that the stress concentrates in the portion of the film nearest the substrate. The stress in tungsten films also reaches a maximum at 550 /sup 0/C, similar to the tungsten silicide films. However, the cause of this behavior is not clear.

Shioya, Y.; Ikegami, K.; Maeda, M.; Yanagida, K.

1987-01-15T23:59:59.000Z

123

Delta-doping of boron atoms by photoexcited chemical vapor deposition  

SciTech Connect

Boron delta-doped structures in Si crystals were fabricated by means of photoexcited chemical vapor deposition (CVD). Core electronic excitation with high-energy photons ranging from vacuum ultraviolet to soft x rays decomposes B{sub 2}H{sub 6} molecules into fragments. Combined with in situ monitoring by spectroscopic ellipsometry, limited number of boron hydrides can be delivered onto a Si(100) surface by using the incubation period before the formation of a solid boron film. The boron-covered surface is subsequently embedded in a Si cap layer by Si{sub 2}H{sub 6} photo-excited CVD. The crystallinity of the Si cap layer depended on its thickness and the substrate temperature. The evaluation of the boron depth profile by secondary ion mass spectroscopy revealed that boron atoms were confined within the delta-doped layer at a concentration of 2.5 x 10{sup 20} cm{sup -3} with a full width at half maximum of less than 9 nm, while the epitaxial growth of a 130-nm-thick Si cap layer was sustained at 420 deg. C.

Akazawa, Housei [NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)

2012-03-15T23:59:59.000Z

124

Reactor design for uniform chemical vapor deposition-grown films without substrate rotation  

SciTech Connect

A reactor vessel is described for chemical vapor deposition of a uniform semiconductor film on a substrate, comprising: a generally cylindrical reaction chamber for receiving a substrate and a flow of reaction gas capable of depositing a film on the substrate under the conditions of the chamber, the chamber having upper and lower portion and being oriented about a vertical axis; a supporting means having a substrate support surface generally perpendicular to the vertical axis for carrying the substrate within the lower portion of the reaction chamber in a predetermined relative position with respect to the upper portion of the reaction chamber, the upper portion including a cylindrically shaped confinement chamber. The confinement chamber has a smaller diameter than the lower portion of the reaction chamber and is positioned above the substrate support surface; and a means for introducing a reaction gas into the confinement chamber in a nonaxial direction so as to direct the reaction gas into the lower portion of the reaction chamber with a non-axial flow having a rotational component with respect to the vertical axis. In this way the reaction gas defines an inward vortex flow pattern with respect to the substrate surface.

Wanlass, M.

1987-03-17T23:59:59.000Z

125

As-deposited low-strain LPCVD (low-pressure, chemical-vapor-deposition) polysilicon  

SciTech Connect

As-deposited polysilicon films with very low residual strain (lower than 5 x 10/sup -5/) are obtained by a low-pressure, chemical-vapor-deposition (LPCVD) process. Straight polysilicon bridges 300 ..mu..m long, 1.2 ..mu..m thick, and 2 to 20 ..mu..m wide, made using this process. No buckling has been observed in any of the nearly one thousand bridges of this type made in two separate process runs. In addition, no problems of sticking between the bridges and the substrate were encountered with these structures. The polysilicon films from which the beams were fabricated were deposited by pyrolyzing silane at 605/degree/C on a phosphosilicate-glass (PSG) layer (8 wt % P). The PSG layer serves as a sacrificial layer to be subsequently etched away to free the bridge. Our research is aimed at obtaining an understanding of these relationships through consideration of the role of interfacial stresses and the kinetics of initial crystalline nucleation. The technique for producing these low-strain films is significant, however, because no high-temperature annealing steps are required to produce them. 4 refs., 4 figs.

Fan, L.S.; Muller, R.S.

1988-08-01T23:59:59.000Z

126

Towards improved spinnability of chemical vapor deposition generated multi-walled carbon nanotubes  

E-Print Network (OSTI)

P. J. F. 1999 Carbon nanotubes and related structures: newof vapor grown carbon nanotubes and single wall nanotubes, Eto Carbon Materials in Carbon Nanotubes: Preparation and

McKee, Gregg Sturdivant Burke

2008-01-01T23:59:59.000Z

127

New Chemical Systems for Solid Oxide Fuel Cells  

Science Journals Connector (OSTI)

New Chemical Systems for Solid Oxide Fuel Cells ... (238) This, however, represented a significant improvement over earlier work with the use of Pt electrodes, suggesting that further improvements can be made through electrode optimization and, hence, identifying the need for more work in optimizing electrodes for use with apatite electrolytes. ... cond., the optimized compn. ...

A. Orera; P. R. Slater

2009-11-05T23:59:59.000Z

128

Two-step fuel oxidation to improve efficiency in the conversion of chemical energy into work  

SciTech Connect

It is well known that in the conversion of chemical exergy into work a remarkable percentage of exergy is destroyed during the combustion process. Obviously, hypothetical reversible combustions, as proposed in some papers, are not to be taken into account. On the contrary, recent studies of a new system to increase the efficiency of the conversion of chemical exergy into work appear interesting. The proposed system includes a gas turbine system with chemical-looping combustion where a metal oxide is used as an oxygen carrier. Instead of conventional combustion, the oxidation of fuel is carried out in a two-step reaction. The first step is an endothermic reaction in which a metal oxide is reduced by fuel at low temperature and the second step an exothermic reaction in which the products of the former reaction are subjected to oxidation. The thermal energy of low exergy value in the exhaust gas is employed to drive the endothermic reaction. Various systems have been proposed and tested. The power-generation system (called CLSA), with chemical-looping combustion and air saturation seems the most convenient. When only saturated air is used, exergy destruction becomes small in the middle- and low temperature range. However, the inefficiency in the high temperature range remains. On the other hand, when only chemical-looping combustion is used, exergy destruction becomes small in the high- and middle temperature range. However, the inefficiency in the low-temperature range is now not removed. When both technologies are combined, exergy efficiency may become much greater than that obtained from each individual process. The synergistic effect of combining these two technologies is analogous to the improvement achieved when a combined system was designed as a new power-generation system by combining a gas turbine with a steam turbine. For a model system, an exergy efficiency of 53.3% is obtained when the process water is recovered and a value of about 55% is obtained when water is not recovered. A significant advantage of the CLSA system is that CO{sub 2} can be easily recovered. The CO{sub 2} produced in the reduction reactor is not diluted by air since air and fuel enter different reactors. This is quite different from a traditional combustor in which CO{sub 2} is diluted in air and hence cannot be concentrated and separated economically. In the CLSA system, since the exhaust gas from the reduction reactor is composed only of high-concentration CO{sub 2} and water vapor, CO{sub 2} can be easily recovered by cooling the exhaust gas and removing the liquid water, i.e. very little energy expenditure is required for recovering CO{sub 2} from the exhaust gas. The recovered CO{sub 2} may be utilized, e.g., in artificial photosynthesis, whereas a simple recovery without any utilization but only to reduce greenhouse effect seems questionable. Another significant characteristic of CLSA system is that the most of the water vapor in the exhaust gas can be recovered by cooling the exhaust gas from the oxidation reactor. In chemical-looping combustion, fuel is not burned directly and the gas discharged from the oxidation reactor has no impurities from the fuel. Hence, there will be no corrosion of the apparatus when the exhaust gas is cooled to a very low temperature and low cost materials can be utilized for the heat exchangers. Because of the recycling of the most part of water, the CLSA system can be used in locations with limited water resources. Chemical-looping combustion system can be also combined with an integrated coal gasification and this topic appears very interesting. Indeed, to achieve better conversion efficiencies and lower pollutant emissions in power plants, new technologies that combines coal gasification with a gas turbine based combined cycle have been extensively studied worldwide.

Bisio, G.; Rubatto, R.; Marletta, L.

1998-07-01T23:59:59.000Z

129

Electrolytic photodissociation of chemical compounds by iron oxide photochemical diodes  

DOE Patents (OSTI)

Chemical compounds can be dissociated by contacting the same with a p/n type semi-conductor photochemical diode having visible light as its sole source of energy. The photochemical diode consists of low cost, readily available materials, specifically polycrystalline iron oxide doped with silicon in the case of the n-type semi-conductor electrode, and polycrystalline iron oxide doped with magnesium in the case of the p-type electrode. So long as the light source has an energy greater than 2.2 electron volts, no added energy source is needed to achieve dissociation.

Somorjai, Gabor A. (Berkeley, CA); Leygraf, Christofer H. (Berkeley, CA)

1985-01-01T23:59:59.000Z

130

Electrolytic photodissociation of chemical compounds by iron oxide electrodes  

DOE Patents (OSTI)

Chemical compounds can be dissociated by contacting the same with a p/n type semi-conductor diode having visible light as its sole source of energy. The diode consists of low cost, readily available materials, specifically polycrystalline iron oxide doped with silicon in the case of the n-type semi-conductor electrode, and polycrystalline iron oxide doped with magnesium in the case of the p-type electrode. So long as the light source has an energy greater than 2.2 electron volts, no added energy source is needed to achieve dissociation.

Somorjai, Gabor A. (Berkeley, CA); Leygraf, Christofer H. (Berkeley, CA)

1984-01-01T23:59:59.000Z

131

Hydrogen Production via Chemical Looping Redox Cycles Using Atomic Layer Deposition-Synthesized Iron Oxide and Cobalt Ferrites  

Science Journals Connector (OSTI)

Hydrogen Production via Chemical Looping Redox Cycles Using Atomic Layer Deposition-Synthesized Iron Oxide and Cobalt Ferrites ... Unlike solution and line-of-sight methods used to synthesize metal-substituted ferrites, including solution combustion synthesis,(6) aerial oxidation of aqueous suspensions,(5) sol?gel process,(8) laser molecular beam epitaxy,(21) sputtering,(22) and chemical vapor deposition (CVD),(23) ALD can produce conformal thin films on porous materials. ... The drop in peak H2 production rate is accompanied by a ?55% decrease in the total amount of H2 produced (see Table 1) and a similar decrease in the time required to achieve 95% conversion, suggesting a loss of accessible iron in this material. ...

Jonathan R. Scheffe; Mark D. Allendorf; Eric N. Coker; Benjamin W. Jacobs; Anthony H. McDaniel; Alan W. Weimer

2011-03-24T23:59:59.000Z

132

Raman and electron microscopic studies of Si{sub 1-x}Ge{sub x} alloy nanowires grown by chemical vapor deposition  

SciTech Connect

Si{sub 1-x}Ge{sub x} alloy nanowires (SiGeNWs) were grown by Au-catalyzed chemical vapor deposition and studied by Raman spectroscopy, transmission electron microscopy (TEM), and energy-dispersive x-ray spectroscopy (EDS) in TEM (TEM-EDS). The relationship between the growth parameters and the structure of the SiGeNWs was clarified by systematically changing the growth conditions over a wide range. Raman and TEM-EDS results demonstrated that the SiGeNWs consist of a lower Ge composition core and a higher Ge composition shell epitaxially grown on the surface of the core. The effects of oxidation on the structure of the SiGeNWs were studied. It was found that oxidation leads to segregation of the Ge atoms at the interface between the SiGeNWs and SiO{sub 2}, which in turn results in a large inhomogeneity in Ge composition. Oxidation at a very low rate in a diluted oxygen gas atmosphere is required to avoid the formation of Ge particles and minimize the inhomogeneity.

Kawashima, Takahiro; Imamura, Goh; Fujii, Minoru; Hayashi, Shinji; Saitoh, Tohru; Komori, Kazunori [Advanced Devices Development Center, Matsushita Electric Industrial Co., Ltd., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501 (Japan); Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan); Image Devices Development Center, Matsushita Electric Industrial Co., Ltd., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501 (Japan)

2007-12-15T23:59:59.000Z

133

Room-temperature high radio-frequency source power effects on silicon nitride films deposited by using a plasma-enhanced chemical vapor deposition  

Science Journals Connector (OSTI)

Silicon nitride films were deposited at room temperature using a plasma-enhanced chemical vapor deposition system. In this study, the effects of radio frequency (RF) source power ranging from 200 W to ... charact...

Byungwhan Kim; Suyeon Kim

2008-10-01T23:59:59.000Z

134

Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor  

E-Print Network (OSTI)

The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

Nominanda, Helinda

2012-06-07T23:59:59.000Z

135

Microstructural characteristics of chemically processed manganese oxide nanofibers  

SciTech Connect

Nanostructured fibrous manganese oxide cryptomelane-type hollandite powders were prepared via a chemical route. Powders were obtained by the chemical reaction of the aqueous solutions of potassium permanganate and manganese sulfate in the presence of a strong acid, followed by crystalline growth at elevated temperatures. These powders were characterized by powder X-ray diffraction (XRD), Rietveld refinement, analytical scanning electron microscopy (SEM), transmission electron microscopy (TEM) combined with micro-micro diffraction ({mu}{mu}d), and high resolution transmission electron microscopy (HRTEM). The crystalline structure, morphology, crystallite size, fiber growth direction, and structural defects are discussed.

Xiao, T.D. [CIMAV, Chihuahua (Mexico). Centro de Investigacion en Materiales Avanzados] [CIMAV, Chihuahua (Mexico). Centro de Investigacion en Materiales Avanzados; [Univ. of Connecticut, Storrs, CT (United States). Connecticut Advanced Technology Center for Precision Manufacturing; Bokhimi; Benaissa, M.; Perez, R.; Yacaman, M.J. [Univ. Nacional Autonoma de Mexico, Mexico City (Mexico). Inst. de Fisica] [Univ. Nacional Autonoma de Mexico, Mexico City (Mexico). Inst. de Fisica; Strutt, P.R. [Univ. of Connecticut, Storrs, CT (United States). Connecticut Advanced Technology Center for Precision Manufacturing] [Univ. of Connecticut, Storrs, CT (United States). Connecticut Advanced Technology Center for Precision Manufacturing

1997-04-01T23:59:59.000Z

136

The influence of convective heat transfer on flow stability in rotating disk chemical vapor deposition reactors  

SciTech Connect

Flow and heat transfer of NH{sub 3} and He were studied in a rotating disk system with applications to chemical vapor deposition reactors. Flow field and disk heat flux were obtained over a range of operating conditions. Comparisons of disk convective heat transfer were made to infinite rotating disk results to appraise uniformity of transport to the disk. Important operating variables include disk spin rate, disk and enclosure temperatures, flow rate, composition, pressure, and gas mixture temperature at the reactor inlet. These variables were studied over ranges of the spin Reynolds number, Re{omega}; disk mixed convection parameter, MCP{sub w}; and wall mixed convection parameter, MCP{sub w}. Results obtained for NH{sub 3} show that increasing Re{omega} from 314.5 to 3145 increases the uniformity of rotating disk heat flux and results in thinner thermal boundary layers at the disk surface. At Re{omega}=314.5, increasing MCP{sub d} to 15 leads to significant departure from the infinite disk result with nonuniform disk heat fluxes and recirculating flow patterns; flow becomes increasingly complex at larger values of MCP{sub d}. At Re{omega} of 3145, results are closer to the infinite disk for MCP{sub d} up to 15. For large negative (hot walls) and positive (cold walls) values of MCP{sub w}, flow recirculates and there is significant deviation from the infinite disk result; nonuniformities occur at both values of Re{omega}. The influence of MCP{sub w} on flow stability is increased at larger MCP{sub d} and lower Re{omega}. To determine the influence of viscosity and thermal conductivity variation with temperature, calculations were made with He and NH{sub 3}; He transport property variation is low relative to NH{sub 3}. Results show that the flow of NH{sub 3} is less stable than that of He as MCP{sub d} is increased for MCP{sub w}=0 and Re{omega}=314.5. 16 refs., 15 figs., 1 tab.

Winters, W.S.; Evans, G.H. [Sandia National Labs., Livermore, CA (United States); Grief, R. [Univ. of California, Berkeley, CA (United States). Mechanical Engineering Dept.

1997-06-01T23:59:59.000Z

137

Atomic-level investigation of the growth of Si/Ge by ultrahigh vacuum chemical vapor deposition  

SciTech Connect

Si and Ge films can be prepared under ultrahigh vacuum conditions by chemical vapor deposition using disilane and digermane as source gases. These gases offer a high sticking probability, and are suitable for atomic layer epitaxy. Using synchrotron radiation photoemission spectroscopy and scanning tunneling microscopy, we have examined the surface processes associated with the heteroepitaxial growth of Ge/Si. The measured surface-induced shifts and chemical shifts of the Si 2p and Ge 3d core levels allow us to identify the surface species and to determine the surface chemical composition, and this information is correlated with the atomic features observed by scanning tunneling microscopy. Issues related to precursor dissociation, attachment to dangling bonds, diffusion, surface segregation, growth morphology, and pyrolytic reaction pathways will be discussed. {copyright} {ital 1997 American Vacuum Society.}

Lin, D. [Institute of Physics, National Chiao-Tung University, Hsinchu, Taiwan, Republic of (China)] [Institute of Physics, National Chiao-Tung University, Hsinchu, Taiwan, Republic of (China); Miller, T.; Chiang, T. [Department of Physics and Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)] [Department of Physics and Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)

1997-05-01T23:59:59.000Z

138

Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study  

SciTech Connect

By using in situ field effect transistor characterization integrated with molecular beam epitaxy technique, we demonstrate the strong surface transfer p-type doping effect of single layer chemical vapor deposition (CVD) graphene, through the surface functionalization of molybdenum trioxide (MoO{sub 3}) layer. After doping, both the hole and electron mobility of CVD graphene are nearly retained, resulting in significant enhancement of graphene conductivity. With coating of 10 nm MoO{sub 3}, the conductivity of CVD graphene can be increased by about 7 times, showing promising application for graphene based electronics and transparent, conducting, and flexible electrodes.

Han, Cheng [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China) [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China); Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Lin, Jiadan; Xiang, Du [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)] [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Wang, Chaocheng; Wang, Li [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China)] [Department of Physics and Institute for Advanced Study, Nanchang University, 999 Xue Fu Da Dao, Nanchang (China); Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore) [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 and Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)

2013-12-23T23:59:59.000Z

139

Pressure dependence of phonons and excitons in InSe films prepared by metal-organic chemical vapor deposition  

Science Journals Connector (OSTI)

The pressure dependence of the Raman spectra of phase-pure InSe thin films prepared by the low-pressure metal-organic chemical vapor deposition technique has been studied using a diamond-anvil high-pressure cell. Enhancement in the intensities of the Raman modes has been observed as a result of pressure-induced tuning of the energy of the M1-type hyperbolic exciton in InSe at ?2.54 eV through discrete incident laser photon energies. The pressure coefficients of the phonon modes and of the hyperbolic exciton in InSe have been determined.

In-Hwan Choi and Peter Y. Yu

2003-10-27T23:59:59.000Z

140

Identification of vapor-phase chemical warfare agent simulants and rocket fuels using laser-induced breakdown spectroscopy  

SciTech Connect

Application of laser-induced breakdown spectroscopy (LIBS) to the identification of security threats is a growing area of research. This work presents LIBS spectra of vapor-phase chemical warfare agent simulants and typical rocket fuels. A large dataset of spectra was acquired using a variety of gas mixtures and background pressures and processed using partial least squares analysis. The five compounds studied were identified with a 99% success rate by the best method. The temporal behavior of the emission lines as a function of chamber pressure and gas mixture was also investigated, revealing some interesting trends that merit further study.

Stearns, Jaime A.; McElman, Sarah E.; Dodd, James A.

2010-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

E-Print Network 3.0 - aerosol chemical vapor Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

chemical and microphysical properties influence aerosol optical properties and radiative effects... distribution of aerosol extensive and intensive properties will aid ......

142

Detailed chemical kinetic oxidation mechanism for a biodiesel surrogate  

SciTech Connect

A detailed chemical kinetic mechanism has been developed and used to study the oxidation of methyl decanoate, a surrogate for biodiesel fuels. This model has been built by following the rules established by Curran et al. for the oxidation of n-heptane and it includes all the reactions known to be pertinent to both low and high temperatures. Computed results have been compared with methyl decanoate experiments in an engine and oxidation of rapeseed oil methyl esters in a jet stirred reactor. An important feature of this mechanism is its ability to reproduce the early formation of carbon dioxide that is unique to biofuels and due to the presence of the ester group in the reactant. The model also predicts ignition delay times and OH profiles very close to observed values in shock tube experiments fueled by n-decane. These model capabilities indicate that large n-alkanes can be good surrogates for large methyl esters and biodiesel fuels to predict overall reactivity, but some kinetic details, including early CO{sub 2} production from biodiesel fuels, can be predicted only by a detailed kinetic mechanism for a true methyl ester fuel. The present methyl decanoate mechanism provides a realistic kinetic tool for simulation of biodiesel fuels.

Herbinet, O; Pitz, W J; Westbrook, C K

2007-09-20T23:59:59.000Z

143

Detailed chemical kinetic oxidation mechanism for a biodiesel surrogate  

SciTech Connect

A detailed chemical kinetic mechanism has been developed and used to study the oxidation of methyl decanoate, a surrogate for biodiesel fuels. This model has been built by following the rules established by Curran et al. for the oxidation of n-heptane and it includes all the reactions known to be pertinent to both low and high temperatures. Computed results have been compared with methyl decanoate experiments in an engine and oxidation of rapeseed oil methyl esters in a jet stirred reactor. An important feature of this mechanism is its ability to reproduce the early formation of carbon dioxide that is unique to biofuels and due to the presence of the ester group in the reactant. The model also predicts ignition delay times and OH profiles very close to observed values in shock tube experiments fueled by n-decane. These model capabilities indicate that large n-alkanes can be good surrogates for large methyl esters and biodiesel fuels to predict overall reactivity, but some kinetic details, including early CO2 production from biodiesel fuels, can be predicted only by a detailed kinetic mechanism for a true methyl ester fuel. The present methyl decanoate mechanism provides a realistic kinetic tool for simulation of biodiesel fuels.

Herbinet, O; Pitz, W J; Westbrook, C K

2007-09-17T23:59:59.000Z

144

Calibrated vapor generator source  

DOE Patents (OSTI)

A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet. 10 figs.

Davies, J.P.; Larson, R.A.; Goodrich, L.D.; Hall, H.J.; Stoddard, B.D.; Davis, S.G.; Kaser, T.G.; Conrad, F.J.

1995-09-26T23:59:59.000Z

145

Volatilities of Actinide and Lanthanide N,NDimethylaminodiboranate Chemical Vapor Deposition  

E-Print Network (OSTI)

, Supercomputing Institute, and Chemical Theory Center, University of Minnesota, 207 Pleasant Street SE, Switzerland § The School of Chemical Sciences, University of Illinois at Urbana-Champaign, 600 South Mathews for technological applications such as capacitors, field effect transistors, displays, thermoelectric devices, light

Girolami, Gregory S.

146

Evaluation of Novel Ceria-Supported Metal Oxides As Oxygen Carriers for Chemical-Looping Combustion  

E-Print Network (OSTI)

Evaluation of Novel Ceria-Supported Metal Oxides As Oxygen Carriers for Chemical-Looping Combustion and examined as oxygen carrier materials for chemical-looping combustion (CLC). Unlike conventional support agglomeration. 1. INTRODUCTION 1.1. Chemical-Looping Combustion. Chemical-looping combustion (CLC

Azad, Abdul-Majeed

147

Silicon nucleation and film evolution on silicon dioxide using disilane: Rapid thermal chemical vapor deposition of very smooth silicon at high deposition rates  

SciTech Connect

An investigation of Si{sub 2}H{sub 6} and H{sub 2} for rapid thermal chemical vapor deposition (RTCVD) of silicon on SiO{sub 2} has been performed at temperatures ranging from 590 to 900 C and pressures ranging from 0.1 to 1.5 Torr. Deposition at 590 C yields amorphous silicon films with the corresponding ultrasmooth surface with a deposition rate of 68 nm/min. Cross-sectional transmission electron microscopy of a sample deposited at 625 C and 1 Torr reveals a bilayer structure which is amorphous at the growth surface and crystallized at the oxide interface. Higher temperatures yield polycrystalline films where the surface roughness depends strongly on both deposition pressure and temperature. Silane-based amorphous silicon deposition in conventional systems yields the expected ultrasmooth surfaces, but at greatly reduced deposition rates unsuitable for single-wafer processing. However, disilane, over the process window considered here, yields growth rates high enough to be appropriate for single-wafer manufacturing, thus providing a viable means for deposition of very smooth silicon films on SiO{sub 2} in a single-wafer environment.

Violette, K.E.; Oeztuerk, M.C.; Christensen, K.N.; Maher, D.M. [North Carolina State Univ., Raleigh, NC (United States)

1996-02-01T23:59:59.000Z

148

Nanocrystalline-Si-dot multi-layers fabrication by chemical vapor deposition with H-plasma surface treatment and evaluation of structure and quantum confinement effects  

SciTech Connect

100-nm-thick nanocrystalline silicon (nano-Si)-dot multi-layers on a Si substrate were fabricated by the sequential repetition of H-plasma surface treatment, chemical vapor deposition, and surface oxidation, for over 120 times. The diameter of the nano-Si dots was 56 nm, as confirmed by both the transmission electron microscopy and X-ray diffraction analysis. The annealing process was important to improve the crystallinity of the nano-Si dot. We investigated quantum confinement effects by Raman spectroscopy and photoluminescence (PL) measurements. Based on the experimental results, we simulated the Raman spectrum using a phenomenological model. Consequently, the strain induced in the nano-Si dots was estimated by comparing the experimental and simulated results. Taking the estimated strain value into consideration, the band gap modulation was measured, and the diameter of the nano-Si dots was calculated to be 5.6 nm by using PL. The relaxation of the q ? 0 selection rule model for the nano-Si dots is believed to be important to explain both the phenomena of peak broadening on the low-wavenumber side observed in Raman spectra and the blue shift observed in PL measurements.

Kosemura, Daisuke, E-mail: d-kose@isc.meiji.ac.jp; Mizukami, Yuki; Takei, Munehisa; Numasawa, Yohichiroh; Ogura, Atsushi [School of Science and Technology, Meiji University, Kawasaki 214-8571 (Japan)] [School of Science and Technology, Meiji University, Kawasaki 214-8571 (Japan); Ohshita, Yoshio [Toyota Technological Institute, Nagoya 468-8511 (Japan)] [Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-01-15T23:59:59.000Z

149

In situ mass spectrometric study of pyrite (FeS{sub 2}) thin film deposition with metallorganic chemical vapor deposition  

SciTech Connect

Pyrite, FeS{sub 2}, thin films have been prepared by metallorganic chemical vapor deposition using tert-butyl disulfide (TBDS) and iron(III) acetylacetonate [Fe(acac){sub 3}] as the precursors and H{sub 2} as co-reactant. The reaction mechanism is studied with in situ mass spectrometry. The thermal decomposition of TBDS and Fe(acac){sub 3} has been investigated, as well as the synthesis of FeS{sub 2}. A complicated gas-phase reaction chain occurs in the deposition reaction. In the first 1--2 cm of the deposition zone, thick rough films are formed, but further downstream in the reactor a smooth FeS{sub 2} film is deposited. This remarkable change in morphology is accounted for in the proposed reaction mechanism.

Reijnen, L.; Meester, B.; Goossens, A.; Schoonman, J.

2000-05-01T23:59:59.000Z

150

Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine  

Science Journals Connector (OSTI)

We have successfully deposited SiNx:H films at temperatures as low as 350C by the chemical-vapor-deposition (CVD) method using hexachloro-disilane (Si2Cl6) and hydrazine (N2H4). The atomic ratio (N/Si) of the film deposited at 400C was 1.26 with a total hydrogen content of about 30 at.%. The breakdown-field strength was 5.3 MV/cm at a leakage-current density of 1 A/cm2, and the low-field resistivity was more than 1015 ?cm. Amorphous-silicon thin-film transistors equipped with this film as the gate dielectric showed clear transfer characteristics.

Wen-Chang Yeh; Ryoichi Ishihara; Shunsuke Morishita; Masakiyo Matsumura

1996-01-01T23:59:59.000Z

151

Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition  

SciTech Connect

CdTe thin film has been grown by metalorganic chemical vapor deposition (MOCVD) on Ni(100) substrate. Using x-ray pole figure measurements we observed the epitaxial relationship of {111}CdTe// {001}Ni with [110]CdTe//[010]Ni and [112] CdTe//[100]Ni. The 12 diffraction peaks in the (111) pole figure of CdTe film and their relative positions with respect to the four peak positions in the (111) pole figure of Ni substrate are consistent with four equivalent orientational domains of CdTe with three to four superlattice match of about 0.7% in the [110] direction of CdTe and the [010] direction of Ni. The electron backscattered diffraction (EBSD) images show that the CdTe domains are 30 degrees orientated from each other.

GIARE, C [Rensselaer Polytechnic Institute (RPI); RAO, S [Rensselaer Polytechnic Institute (RPI); RILEY, M [Rensselaer Polytechnic Institute (RPI); CHEN, L [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; BHAT, I [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI); WANG, G [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

152

The growth of CdTe/GaAs heteroepitaxial films by metalorganic chemical vapor deposition  

Science Journals Connector (OSTI)

A process for the growth of CdTe/GaAs heteroepitaxialfilms using metalorganic chemical vapor deposition(MOCVD) has been developed. The initial results of the determination of the deposition mechanism are reported. A pilot production demonstration using experimentally determined operating conditions has been completed. This is the first reported pilot production of CdTe/GaAs using 2 in. diam GaAs substrates in a multiple slice commercially manufactured MOCVD system. The results reported therein demonstrate that MOCVD is a reliable reproducible production worthy process for preparation of CdTe/GaAs heterostructures. These results are applicable to a wide variety of CdTe based device technologies including IR detection fiber optics solar cells and others.

Philip L. Anderson

1986-01-01T23:59:59.000Z

153

Photoluminescence microscopy of carbon nanotubes grown by chemical vapor deposition: Influence of external dielectric screening on optical transition energies  

Science Journals Connector (OSTI)

Photoluminescence (PL) laser microscopy was applied to determine optical transition energies E11 and E22 of individual semiconducting single-walled carbon nanotubes (SWNTs) suspended on top of carbon nanotube forests, grown by chemical vapor deposition (CVD) on silicon substrates. A uniform increase of E11 and E22 energies by 4055 and 2448meV, respectively, was found for 19 different (n,m) nanotube species suspended in air or a vacuumrelative to SWNTs in a reference water-surfactant dispersion. CVD-grown SWNTs embedded in paraffin oil and 1-methylnaphthalene show nearly the same PL peak positions as SWNTs in aqueous dispersion, indicating similar dielectric screening of excitons in SWNTs in these media.

Oliver Kiowski; Sergei Lebedkin; Frank Hennrich; Sharali Malik; Harald Rsner; Katharina Arnold; Christoph Srgers; Manfred M. Kappes

2007-02-23T23:59:59.000Z

154

Plasma-enhanced chemical vapor deposition of graphene on copper substrates  

SciTech Connect

A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO{sub 2} substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm{sup 2}. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

Woehrl, Nicolas, E-mail: nicolas.woehrl@uni-due.de; Schulz, Stephan [Faculty of Chemistry and CENIDE, University Duisburg-Essen, Carl-Benz-Strae 199, 47057 Duisburg (Germany)] [Faculty of Chemistry and CENIDE, University Duisburg-Essen, Carl-Benz-Strae 199, 47057 Duisburg (Germany); Ochedowski, Oliver; Gottlieb, Steven [Faculty of Physics and CENIDE, University Duisburg Essen, Lotharstrae 1, 47057 Duisburg (Germany)] [Faculty of Physics and CENIDE, University Duisburg Essen, Lotharstrae 1, 47057 Duisburg (Germany); Shibasaki, Kosuke [Institute of Materials Science, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)] [Institute of Materials Science, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

2014-04-15T23:59:59.000Z

155

Thermal Stability and Substitutional Carbon Incorporation far above Solid-Solubility in Si1-xCx and Si1-x-yGexCy Layers Grown by Chemical Vapor Deposition  

E-Print Network (OSTI)

Cx and Si1-x-yGexCy Layers Grown by Chemical Vapor Deposition using Disilane M. S. Carroll*, J. C. Sturm on (100) silicon substrates by rapid thermal chemical vapor deposition (RTCVD) with disilane source gas and disilane is known to produce higher silicon epitaxial growth rates for similar partial

156

Germania-glass-core silica-glass-cladding modified chemical-vapor deposition optical fibers: optical losses, photorefractivity, and Raman amplification  

Science Journals Connector (OSTI)

Germania-glass-core silica-glass-cladding single-mode fibers (?n as great as 0.143) with a minimum loss of 20 dB/km at 1.85 m were fabricated by modified chemical-vapor...

Mashinsky, V M; Neustruev, V B; Dvoyrin, V V; Vasiliev, S A; Medvedkov, O I; Bufetov, I A; Shubin, A V; Dianov, E M; Guryanov, A N; Khopin, V F; Salgansky, M Yu

2004-01-01T23:59:59.000Z

157

Surface roughening in low-pressure chemical vapor deposition Jason T. Drotar, Y.-P. Zhao, T.-M. Lu, and G.-C. Wang  

E-Print Network (OSTI)

Surface roughening in low-pressure chemical vapor deposition Jason T. Drotar, Y.-P. Zhao, T.-M. Lu September 2001 We examine, using (2 1)-dimensional Monte Carlo simulations, the roughening behavior roughens logarithmically with time and that the scaling exponents are, for most sets of conditions, close

Wang, Gwo-Ching

158

Optimization of the Catalytic Chemical Vapor Deposition Synthesis of Multiwall Carbon Nanotubes on FeCo(Ni)/SiO2 Aerogel Catalysts by Statistical Design of Experiments  

Science Journals Connector (OSTI)

We report on optimizing the catalytic chemical vapor deposition synthesis of multiwall carbon nanotubes (MWCNTs) from ethene over supported transition metal SiO2 nanocomposite aerogels using the statistical design of experiments (DOE) approach. ... The NIST/SEMATECH e-Handbook of Statistical Methods, http://www.itl.nist.gov/div898/handbook/ is acknowledged for DoE-related information. ...

Lszl Vanyorek; Danilo Loche; Hajnalka Katona; Maria Francesca Casula; Anna Corrias; Zoltn Knya; kos Kukovecz; Imre Kiricsi

2011-03-10T23:59:59.000Z

159

A kinetic model of diamond nucleation and silicon carbide interlayer formation during chemical vapor deposition  

E-Print Network (OSTI)

A kinetic model of diamond nucleation and silicon carbide interlayer formation during chemical February 2005 Available online 7 April 2005 Abstract The presence of thin silicon carbide intermediate of carbon atoms into the silicon carbide layer and the morphology and orientation of the diamond film

Dandy, David

160

Atmospheric pressure plasma chemical vapor deposition system for high-rate deposition of functional materials  

Science Journals Connector (OSTI)

The atmospheric pressure plasmachemical vapor deposition(CVD) system has been developed to fabricate functional thin films at very high deposition rate. The atmospheric pressure plasma in which high-density radicals are created has been effectively used to depositthin films. Combination of the newly designed rotary electrode and the 150 MHz very high frequency power supply makes it possible not only to generate the high-density atmospheric pressure plasma but also to avoid ion bombardment against the film. By virtue of these noble characteristics of the system high quality films can be fabricated at an unprecedented high deposition rate. In order to demonstrate the effectiveness of the atmospheric pressure plasmaCVD system hydrogenated amorphous silicon (a- Si:H ) films were prepared in gas mixtures containing He H 2 and SiH 4 . The results showed that homogeneous a- Si:H films grew when substrates were heated at 200?C. Extremely high deposition rate which was more than 100 times faster than that of the conventional low-pressure plasma CVD technique was realized.

Y. Mori; K. Yoshii; H. Kakiuchi; K. Yasutake

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Hydrogen Ingress in Steels During High-Temperature Oxidation in Water Vapor  

SciTech Connect

It is well established that hydrogen derived from water vapour can penetrate oxidizing alloys with detrimental effect. However, the complexities of tracking hydrogen in these materials have prevented the direct profiling of hydrogen ingress needed to understand these phenomena. Here we report hydrogen profiles in industrially-relevant alumina- and chromia- forming steels correlated with the local oxide-metal nano/microstructure by use of SIMS D2O tracer studies and experimental protocols to optimize D retention. The D profiles unexpectedly varied markedly among the alloys examined, which indicates mechanistic complexity but also the potential to mitigate detrimental water vapour effects by manipulation of alloy chemistry.

Brady, Michael P [ORNL; Fayek, Mostafa [ORNL; Keiser, James R [ORNL; Meyer III, Harry M [ORNL; More, Karren Leslie [ORNL; Anovitz, Lawrence {Larry} M [ORNL; Wesolowski, David J [ORNL; Cole, David R [ORNL

2011-01-01T23:59:59.000Z

162

Quantum Chemical Simulations Reveal Acetylene-Based Growth Mechanisms in the Chemical Vapor Deposition Synthesis of Carbon Nanotubes  

SciTech Connect

Nonequilibrium quantum chemical molecular dynamics (QM/MD) simulation of early stages in the nucleation process of carbon nanotubes from acetylene feedstock on an Fe38 cluster was performed based on the density-functional tight-binding (DFTB) potential. Representative chemical reactions were studied by complimentary static DFTB and density functional theory (DFT) calculations. Oligomerization and cross-linking reactions between carbon chains were found as the main reaction pathways similar to that suggested in previous experimental work. The calculations highlight the inhibiting effect of hydrogen for the condensation of carbon ring networks, and a propensity for hydrogen disproportionation, thus enriching the hydrogen content in already hydrogen-rich species and abstracting hydrogen content in already hydrogen-deficient clusters. The ethynyl radical C2H was found as a reactive, yet continually regenerated species, facilitating hydrogen transfer reactions across the hydrocarbon clusters. The nonequilibrium QM/MD simulations show the prevalence of a pentagon-first nucleation mechanism where hydrogen may take the role of one arm of an sp2 carbon Y-junction. The results challenge the importance of the metal carbide formation for SWCNT cap nucleation in the VLS model and suggest possible alternative routes following hydrogen-abstraction acetylene addition (HACA)-like mechanisms commonly discussed in combustion synthesis.

Eres, Gyula [ORNL] [ORNL; Wang, Ying [Nagoya University, Japan] [Nagoya University, Japan; Gao, Xingfa [Institute of High Energy Physics, Chinese Academy of Sciences, China] [Institute of High Energy Physics, Chinese Academy of Sciences, China; Qian, Hu-Jun [Jilin University, Changchun] [Jilin University, Changchun; Ohta, Yasuhito [Fukui Institute of Fundamental Chemistry, Kyoto University, Kyoto 606-8103, Japan] [Fukui Institute of Fundamental Chemistry, Kyoto University, Kyoto 606-8103, Japan; Wu, Xiaona [Nagoya University, Japan] [Nagoya University, Japan; Morokuma, Keiji [Fukui Institute of Fundamental Chemistry, Kyoto University, Kyoto 606-8103, Japan] [Fukui Institute of Fundamental Chemistry, Kyoto University, Kyoto 606-8103, Japan; Irle, Stephan [WPI-Institute of Transformative Bio-Molecules and Department of Chemistry, Nagoya University, Japan] [WPI-Institute of Transformative Bio-Molecules and Department of Chemistry, Nagoya University, Japan

2014-01-01T23:59:59.000Z

163

The Vapor Deposition and Oxidation of Platinum-and Yttria-Stabilized Zirconia Multilayers  

E-Print Network (OSTI)

rates by disrupting thermal transport processes. Novel metal­ceramic multilayer's combining thin metal layers with low thermal conductivity oxide ceramics offer a potential approach for impeding both­200-mm-thick low thermal conductivity ceramic outer layer (the top coat), a 10­20-mm-thick, aluminum

Wadley, Haydn

164

Lithium manganese oxide films fabricated by electron beam directed vapor deposition  

E-Print Network (OSTI)

material for high energy den- sity battery applications.7,8 Lithium­transition metal oxide films can.2. After annealing in air at 700 °C, thin films grown with a low jet speed had a cubic spinel structure Li/Li-ion batteries. © 2008 American Vacuum Society. DOI: 10.1116/1.2823488 I. INTRODUCTION Thin film

Wadley, Haydn

165

In-situ observations during chemical vapor deposition of hexagonal boron nitride on polycrystalline copper  

E-Print Network (OSTI)

-characterised the Cu catalyst exposed to ammonia (NH3, i.e. a nitrogen and hydrogen source without B) instead of borazine under similar pressures. For this ammonia exposure no expansion in the Cu lattice constant is found. As ammonia is known to dissociate on Cu... 1s (Figure 5a,b,c) and valence band (Supporting Figure S4) regions.12 We find that before CVD the as loaded Cu foil surface is heavily oxidized due to storage and transportation in ambient air (before step 1).12 Following an anneal (step 2) in H2...

Kidambi, Piran R.; Blume, Raoul; Kling, Jens; Wagner, Jakob B.; Baehtz, Carsten; Weatherup, Robert S.; Schlgl, Robert; Bayer, Bernhard C.; Hofmann, Stephan

2014-10-20T23:59:59.000Z

166

An experimental and detailed chemical kinetic modelling study of 2methyl furan oxidation  

E-Print Network (OSTI)

platform chemical 5hydroxymethylfurfural now a possibility [4], [5], [6] and [7]. 25DMF offers significantAn experimental and detailed chemical kinetic modelling study of 2methyl furan oxidation.55­1.65, initial temperatures of 298­398 K and atmospheric pressure. A detailed chemical kinetic mechanism

Paris-Sud XI, Université de

167

Amorphous-Silicon Thin-Film Transistors Using Chemical Vapor Deposition of Disilane  

Science Journals Connector (OSTI)

Amorphous silicon layers have been deposited by low pressure chemical vapour deposition at 450C using disilane as the only source gas. Simple inverted staggered thin-film transistors were made with thermal silicon dioxide as the gate insulator. Field-effect mobilities for electrons and holes were 1.4 cm2/V s and 0.1 cm2/V s, respectively. In order to obtain these high mobilities the transistor structures were carefully annealed in a hydrogen-radical rich ambient.

PaulA. Breddels; Hiroshi Kanoh; Osamu Sugiura; Masakiyo Matsumura

1990-01-01T23:59:59.000Z

168

Plasma-enriched chemical vapor deposition of silicon nitride on silicon carbide fibers  

SciTech Connect

Near stoichiometric Si:N coatings were deposited by means of PECVD on SCS-6 SiC fibers which contained a carbon-rich coating. Weight loss associated with oxidation of the outer carbon-rich coating of the as-received SiC fibers was greatly reduced for the Si:N coated SiC fibers even after 10 h heat-treatment in oxygen at 800{degrees}C. Auger Electron Spectroscopy (AES) was used to obtain elemental compositions of the as-received and Si:N coated SiC fibers after heat-treatment. Negligible amounts of oxygen were found at the carbon-rich coating of the heat-treated Si:N coated SiC fiber. These results clearly prove the effectiveness of PECVD silicon nitride coating as an oxygen diffusion barrier.

Stinespring, C.D.; Collazos, D.F.; Gupta, R.K. [West Virginia Univ., Morgantown, WV (United States)] [and others

1994-12-31T23:59:59.000Z

169

Effect of Water Vapor on the Oxidation Mechanisms of a Commercial Stainless Steel for Interconnect Application in High Temperature Water Vapor Electrolysis  

Science Journals Connector (OSTI)

High temperature water vapor electrolysis is one of the most promising methods...25%H2O) and cathode atmospheres (10%H290%H2O). In cathode atmosphere, ageing tests performed up to 1,000h revealed the format...

Maria Rosa Ardigo; Ioana Popa; Sbastien Chevalier; Sylvain Weber

2013-06-01T23:59:59.000Z

170

Diameter and wall number control of carbon nanotubes by chemical vapor deposition  

SciTech Connect

We analyze the relationship between the average wall number (N) and the diameter (d) for carbon nanotubes (CNTs) grown by chemical vapour deposition. It is found that N depends linearly on d for diameters in the range of 2.510?nm, while single wall nanotubes predominate for diameters under about 2.1?nm. The linear relationship is found to depend somewhat on the growth conditions. It is also verified that the mean diameter depends on the diameter of the originating catalyst nanoparticle, and thus on the initial catalyst thickness where a thin film catalyst is used. This simplifies the characterisation of CNTs by electron microscopy. We also find a linear relationship between nanotube diameter and initial catalyst film thickness.

Xie, Rongsi; Zhong, Guofang, E-mail: gz222@cam.ac.uk; Zhang, Can; Chen, Bingan; Santiago Esconjauregui, C.; Robertson, John [Department of Engineering, University of Cambridge, Cambridge CB2 1PZ (United Kingdom)

2013-12-28T23:59:59.000Z

171

Data for First Responder Use of Photoionization Detectors for Vapor Chemical Constituents  

SciTech Connect

First responders need appropriate measurement technologies for evaluating incident scenes. This report provides information about photoionization detectors (PIDs), obtained from manufacturers and independent laboratory tests, and the use of PIDs by first responders, obtained from incident commanders in the United States and Canada. PIDs are valued for their relatively low cost, light weight, rapid detection response, and ease of use. However, it is clear that further efforts are needed to provide suitable instruments and decision tools to incident commanders and first responders for assessing potential hazardous chemical releases. Information provided in this report indicates that PIDs should always be part of a decision-making context in which other qualitative and more definitive tests and instruments are used to confirm a finding. Possible amelioratory actions ranging from quick and relatively easy fixes to those requiring significant additional effort are outlined in the report.

Keith A. Daum; Matthew G. Watrous; M. Dean Neptune; Daniel I. Michael; Kevin J. Hull; Joseph D. Evans

2006-11-01T23:59:59.000Z

172

Step-coverage simulation for tetraethoxysilane and ozone atmospheric pressure chemical vapor deposition  

SciTech Connect

A simulation model for atmospheric pressure (AP) CVD has bee developed using one-dimensional diffusion and mass conservation equations. The model was applied to trench step-coverage of the tetraethoxysilane (TEOS) and O[sub 3] CVD, in which it was not necessary to consider lateral diffusion because of narrow (and deep) trenches. For nondoped silicate glass (NSG), the step-coverage of a 4.5 aspect ratio trench showed a good fit if a sticking probability of 0.0039 was assumed for the 0.6% ozone (in oxygen) deposition and of 0.0026 for the 6% ozone deposition (both 400 C). The reaction rate constant was compared with the diffusion mass-transfer coefficient, and the reaction proved to be limited by diffusion of the reactant, TEOS, which directly participated in the CVD reaction. For the 2 m/o phosphosilicate glass (PSG) step-coverage, which had a slight overhang, the model matched the obtained results well only when an active growth species with a high sticking probability of 1.0 was added to the growth species of nondoped oxide. This analytical simulation method satisfactorily explains the experimental data.

Fujino, K. (Semiconductor Process Lab., Toyko (Japan)); Egashira, Y.; Shimogaki, Y.; Komiyama, H. (Univ. of Tokyo, (Japan). Dept. of Chemical Engineering)

1993-08-01T23:59:59.000Z

173

Laser-induced fluorescence measurements and kinetic analysis of Si atom formation in a rotating disk chemical vapor deposition reactor  

SciTech Connect

An extensive set of laser-induced fluorescence (LIF) measurements of Si atoms during the chemical vapor deposition (CVD) of silicon from silane and disilane in a research rotating disk reactor are presented. The experimental results are compared in detail with predictions from a numerical model of CVD from silane and disilane that treats the fluid flow coupled to gas-phase and gas-surface chemistry. The comparisons showed that the unimolecular decomposition of SiH[sub 2] could not account for the observed gas-phase Si atom density profiles. The H[sub 3]SiSiH [leftrightarrow] Si + SiH[sub 4] and H[sub 3]SiSiH + SiH[sub 2] [leftrightarrow] Si + Si[sub 2]H[sub 6] reactions are proposed as the primary Si atom production routes. The model is in good agreement with the measured shapes of the Si atom profiles and the trends in Si atom density with susceptor temperature, pressure, and reactant gas mixture. 33 refs., 12 figs., 3 tabs.

Ho, P.; Coltrin, M.E.; Breiland, W.G. (Sandia National Lab., Albuquerque, NM (United States))

1994-10-06T23:59:59.000Z

174

The Effect of High Temperature Annealing on the Grain Characteristics of a Thin Chemical Vapor Deposition Silicon Carbide Layer.  

SciTech Connect

The unique combination of thermo-mechanical and physiochemical properties of silicon carbide (SiC) provides interest and opportunity for its use in nuclear applications. One of the applications of SiC is as a very thin layer in the TRi-ISOtropic (TRISO) coated fuel particles for high temperature gas reactors (HTGRs). This SiC layer, produced by chemical vapor deposition (CVD), is designed to withstand the pressures of fission and transmutation product gases in a high temperature, radiation environment. Various researchers have demonstrated that macroscopic properties can be affected by changes in the distribution of grain boundary plane orientations and misorientations [1 - 3]. Additionally, various researchers have attributed the release behavior of Ag through the SiC layer as a grain boundary diffusion phenomenon [4 - 6]; further highlighting the importance of understanding the actual grain characteristics of the SiC layer. Both historic HTGR fission product release studies and recent experiments at Idaho National Laboratory (INL) [7] have shown that the release of Ag-110m is strongly temperature dependent. Although the maximum normal operating fuel temperature of a HTGR design is in the range of 1000-1250C, the temperature may reach 1600C under postulated accident conditions. The aim of this specific study is therefore to determine the magnitude of temperature dependence on SiC grain characteristics, expanding upon initial studies by Van Rooyen et al, [8; 9].

Isabella J van Rooyen; Philippus M van Rooyen; Mary Lou Dunzik-Gougar

2013-08-01T23:59:59.000Z

175

Thermal treatment induced change of diluted oxygen doped ZnTe films grown by metal-organic chemical vapor deposition  

Science Journals Connector (OSTI)

In this paper the authors report the growth of diluted oxygen doped ZnTe films (ZnTe:O) by metal-organic chemical vapor deposition (MOCVD). The effect of a post thermal annealing on the properties of the highly mismatched films has been investigated. It is found that the in-situ doping leads to an effective incorporation of oxygen into ZnTe films with different occupation configurations either on Zn or on Te site. The subsequent annealing process in a vacuum ambient leads to an enhancement of the oxygen incorporation into the ZnTe:O films due to the diffusion of the residual oxygen while the annealing with the same as-grown sample covered on top of the surface (denoted as face-to-face annealing in the text) is beneficial to the improvement of the film quality with manifest intermediate band emission at around 1.9?eV as revealed by the low-temperature photoluminescence. This study indicates that the mass-productive MOCVD technique may be suitable for the growth of highly mismatched ZnTe:O films for the application of the intermediate band solar cell.

2014-01-01T23:59:59.000Z

176

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC  

SciTech Connect

The transport properties of quasi-free-standing (QFS) bilayer graphene on SiC depend on a range of scattering mechanisms. Most of them are isotropic in nature. However, the SiC substrate morphology marked by a distinctive pattern of the terraces gives rise to an anisotropy in graphene's sheet resistance, which may be considered an additional scattering mechanism. At a technological level, the growth-preceding in situ etching of the SiC surface promotes step bunching which results in macro steps ?10?nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be ?190???m for step height h{sub S}?=?10?nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications.

Ciuk, Tymoteusz [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Cakmakyapan, Semih; Ozbay, Ekmel [Department of Electrical and Electronics Engineering, Department of Physics, Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Caban, Piotr; Grodecki, Kacper; Pasternak, Iwona; Strupinski, Wlodek, E-mail: wlodek.strupinski@itme.edu.pl [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Krajewska, Aleksandra [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland); Institute of Optoelectronics, Military University of Technology, Gen. S. Kaliskiego 2, 00-908 Warsaw (Poland); Szmidt, Jan [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

2014-09-28T23:59:59.000Z

177

Use of SiBN and SiBON films prepared by plasma enhanced chemical vapor deposition from borazine as interconnection dielectrics  

SciTech Connect

Thin films of silicon boron nitride (SiBN) of typical composition Si{sub 0.09}B{sub 0.39}N{sub 0.51} and silicon boron oxynitride (SiBON) of typical composition Si{sub 0.16}B{sub 0.29}O{sub 0.41}N{sub 0.14} were prepared by plasma enhanced chemical vapor deposition and the properties of these films were evaluated with respect to their suitability as interconnection dielectrics in microelectronic fabrication. Films were deposited on 125 mm silicon substrates in a parallel-plate reactor at a substrate temperature of 400 C and a plasma power of 0.5 W/cm{sup 2}. Boron nitride, for comparison of electrical properties, was deposited from borazine (B{sub 3}N{sub 3}H{sub 6}); silicon boron nitride was deposited from borazine, disilane (Si{sub 2}H{sub 6}), and ammonia (NH{sub 3}); silicon boron oxynitride was deposited from borazine, disilane, ammonia, and nitrous oxide (N{sub 2}O). Metal-insulator-metal capacitors were fabricated and electrical measurements indicated that all three films had excellent dielectric properties with dielectric constants of 4.1, 4.7, and 3.9 for BN, SiBN, and SiBON, respectively. Tests of conformality indicated that deposition into trenches with an aspect ratio of 4:1 gave conformality greater than 70%. Silicon boron oxynitride was shown to be an excellent barrier to the diffusion of copper. A planar, single level metal-insulator structure was constructed using a SiBN/SiBON insulator with copper metallization.

Kane, W.F.; Cohen, S.A.; Hummel, J.P.; Luther, B. [IBM Research Div., Yorktown Heights, NY (United States). T.J. Watson Research Center; Beach, D.B. [Oak Ridge National Lab., TN (United States). Chemical and Analytical Sciences Div.

1997-02-01T23:59:59.000Z

178

Thermal Decomposition of Molecules Relevant to Combustion and Chemical Vapor Deposition by Flash Pyrolysis Time-of-Flight Mass Spectrometry  

E-Print Network (OSTI)

of Small Molecules by Flash Pyrolysis, University ofwas performed using flash pyrolysis vacuum-ultraviolet time-Vapor Deposition by Flash Pyrolysis Time-of-Flight Mass

Lemieux, Jessy Mario

2013-01-01T23:59:59.000Z

179

Chemical vapor deposition of amorphous semiconductor films. Semiannual report, 1 May 1983-31 October 1984  

SciTech Connect

This report presents an analysis of intrinsic and phosphorus-doped n-type amorphous silicon films deposited by LPCVD from disilane in a laminar flow tubular reactor. These films were analyzed using SIMs, ESR measurements, optical absorption, and conductivity in light and dark. CVD deposited i layers were used to make platinum Schottky barrier devices and hybrid cells utilizing glow discharge deposited layers in both the ITO/nip/Mo and ITO/pin/Mo configurations. The highest efficiency of hybrid cells with the ITO/ni(CVD)/p(GD)/Mo structure was approximately 1.5%. The highest efficiencies were obtained with thin i layers. The highest efficiency for the ITO/p(GD)/in(CVD)/Mo configuration was 4.0%. A chemical model was developed describing the gas phase reactions and film growth; the model quantitatively describes the effluent composition when the measured growth rate is input. Kinetic rate expressions and constants for growth from higher silanes are being determined for a wide range of reaction conditions.

Not Available

1984-03-01T23:59:59.000Z

180

Real-time optical diagnostics of graphene growth induced by pulsed chemical vapor deposition  

SciTech Connect

The kinetics and mechanisms of graphene growth on Ni films at 720 -880 C have been measured using fast pulses of acetylene and real-time optical diagnostics. In situ UV-Raman spectroscopy was used to unambiguously detect isothermal graphene growth at high temperatures, measure the growth kinetics with ~ 1s temporal resolution, and estimate the fractional precipitation upon cooldown for the first time. Optical reflectivity and videography provided much faster temporal resolution. Both the growth kinetics and the fractional isothermal precipitation were found to be governed by the C2H2 partial pressure in the CVD pulse for a given film thickness and temperature, with up to ~ 94% of graphene growth occurring isothermally within 1 second at 800 C at high partial pressures. At lower partial pressures, isothermal graphene growth is shown to continue 10 seconds after the gas pulse. These flux-dependent growth kinetics are described in the context of a dissolution/precipitation model, where carbon rapidly dissolves into the Ni film and later precipitates driven by gradients in the chemical potential. The combination of pulsed-CVD and real-time optical diagnostics opens new opportunities to understand and control the fast, sub-second growth of graphene on various substrates at high temperatures.

Puretzky, Alexander A [ORNL; Geohegan, David B [ORNL; Pannala, Sreekanth [ORNL; Rouleau, Christopher M [ORNL; Regmi, Murari [Oak Ridge National Laboratory (ORNL); Thonnard, Norbert [ORNL; Eres, Gyula [ORNL

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Oxidative and initiated chemical vapor deposition for application to organic electronics  

E-Print Network (OSTI)

Since the first discovery of polymeric conductors in 1977, the research area of "organic electronics" has grown dramatically. However, methods for forming thin films comprised solely of conductive polymers are limited by ...

Im, Sung Gap

2009-01-01T23:59:59.000Z

182

Oxidative chemical vapor deposition of semiconducting polymers and their use In organic photovoltaics  

E-Print Network (OSTI)

Organic photovoltaics (OPVs) have received significant interest for their potential low cost, high mechanical flexibility, and unique functionalities. OPVs employing semiconducting polymers in the photoactive layer have ...

Borrelli, David Christopher

2014-01-01T23:59:59.000Z

183

Cerium Oxide Promoted Iron-based Oxygen Carrier for Chemical Looping Combustion  

Science Journals Connector (OSTI)

Cerium Oxide Promoted Iron-based Oxygen Carrier for Chemical Looping Combustion ... It entails the use of an oxygen carrier (OC), usually a metal oxide, to provide oxygen for combusting fuels in a fuel reactor (FR) and then the reoxidization of the OC in a separate air reactor (AR). ... Preprints of Symposia - American Chemical Society, Division of Fuel Chemistry (2004), 49 (2), 815-816 CODEN: PSADFZ; ISSN:1521-4648. ...

Fang Liu; Liangyong Chen; James K. Neathery; Kozo Saito; Kunlei Liu

2014-10-01T23:59:59.000Z

184

Performance and analysis of amorphous silicon p-i-n solar cells made by chemical-vapor deposition from disilane  

SciTech Connect

The photovoltaic performance of amorphous silicon p-i-n solar cells made by chemical-vapor deposition (CVD) from disilane is reported and analyzed. Intrinsic layers were deposited at rates from 0.2 to 50 A/s at temperatures from 380 to 460 /sup 0/C with and without boron doping. Device performance was insensitive to substantial differences in disilane purity. A cell efficiency of 4% was achieved. The primary limitation to higher efficiency was low fill factor (<50%) due to high series resistance (>18 ..cap omega.. cm/sup 2/). Analysis of the series resistance indicated a contact-related resistance of 4--12 ..cap omega.. cm/sup 2/ and a photoconductive resistance composed of intrinsic layer thickness-independent (10 ..cap omega.. cm/sup 2/) and thickness-dependent terms. Analysis of the voltage dependence of the current collection indicated a fill factor of 60% would be expected in the absence of series resistance. The maximum short-circuit current of 12.5 mA/cm/sup 2/ (normalized to 100 mW/cm/sup 2/) resulted with a boron-doped i layer deposited at 440 /sup 0/C at 3.3 A/s. Modeling of the collection efficiency indicated collection widths up to 0.33 ..mu..m for boron-doped and 0.24 ..mu..m for undoped p-i-n devices. In order to achieve high-efficiency cells using CVD from disilane, the limitations imposed by low photoconductivity, a high density of states, and restricted cell design imposed by the high deposition temperatures would have to be overcome.

Hegedus, S.S.; Rocheleau, R.E.; Buchanan, W.; Baron, B.N.

1987-01-01T23:59:59.000Z

185

Pulsed chemical vapor deposition of Cu{sub 2}S into a porous TiO{sub 2} matrix  

SciTech Connect

Chalcocite (Cu{sub 2}S) has been deposited via pulsed chemical vapor deposition (PCVD) into a porous TiO{sub 2} matrix using hydrogen sulfide and a metal-organic precursor. The precursor used is similar to the more common Cu(hfac)(tmvs) precursor, but it is fluorine free and exhibits increased thermal stability. The simultaneous exposure of the substrate to the copper precursor and hydrogen sulfide resulted in nonuniform Cu{sub 2}S films with a temperature independent deposition rate implying gas phase reaction kinetics. The exposure of mesoporous TiO{sub 2} and planar ZnO to alternating cycles of the copper precursor and hydrogen sulfide resulted in a PCVD film that penetrated fully into the porous TiO{sub 2} layer with a constant deposition rate of 0.08 nm/cycle over a temperature range of 150-400 deg. C The chalcocite (Cu{sub 2}S) stoichiometry was confirmed with extended x-ray absorption fine structure measurements (EXAFS) and x-ray photoelectron spectroscopy. Calculations of the EXAFS spectrum for different Cu{sub x}S phases show that EXAFS is sensitive to the different phase stoichiometries. Optical absorption measurements of CVD thin films using photothermal deflection spectroscopy show the presence of a metallic copper-poor phase for gas phase nucleated films less than 100 nm thick and a copper-rich semiconducting phase for thicknesses greater than 100 nm with a direct band gap of 1.8 eV and an indirect bandgap of 1.2 eV.

Carbone, I.; Zhou, Q.; Vollbrecht, B.; Yang, L.; Medling, S.; Bezryadina, A.; Bridges, F.; Alers, G. B.; Norman, J. T.; Kinmen, T. [Department of Physics, University of California at Santa Cruz, 1156 High St., Santa Cruz, California 95064 (United States); Air Products Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011 (United States); Department of Physics, Colorado School of Mines, 1500 Illinois St., Golden, Colorado 80401 (United States)

2011-09-15T23:59:59.000Z

186

Development of Iron Oxide Carriers for Chemical Looping Combustion Using Sol?Gel  

Science Journals Connector (OSTI)

Development of Iron Oxide Carriers for Chemical Looping Combustion Using Sol?Gel ... Industrial & Engineering Chemistry Research (2008), 47 (6), 1747-1754 CODEN: IECRED; ISSN:0888-5885. ... Ishida, M.; Takeshita, K.; Suzuki, K.; Ohba, T. Application of FeO?AlO composite particles as solid looping material of the chemical-loop combustor Energy Fuels 2005, 19, 2514 2518 ...

A. M. Kierzkowska; C. D. Bohn; S. A. Scott; J. P. Cleeton; J. S. Dennis; C. R. Mller

2010-04-30T23:59:59.000Z

187

A Diode Laser Chemical Sensor Utilizing an Oxidized Lower Cladding Layer for High Sensitivity  

E-Print Network (OSTI)

A Diode Laser Chemical Sensor Utilizing an Oxidized Lower Cladding Layer for High Sensitivity Chad@engineering.ucsb.edu Tel: 805.893.7065 Abstract: We demonstrate a novel chemical sensor incorporating a symmetrically-clad clad, and have tight optical confinement [4]. Symmetrically clad dielectric waveguides have been

Coldren, Larry A.

188

Detailed chemical kinetic oxidation mechanism for a biodiesel Olivier Herbineta  

E-Print Network (OSTI)

experiments in an engine and oxidation of rapeseed oil methyl esters in a jet- stirred reactor. An important to biofuels and due to the presence of the ester group in the reactant. The model also predicts ignition delay

Paris-Sud XI, Université de

189

The Sixth International Conference on HotWire Chemical Vapor Deposition (CatCVD) Process will be held  

E-Print Network (OSTI)

coatings, nanostructured carbon, carbon nanotubes, transition metal oxide nanoparticles, and polymers researchers working on different materials (semiconductors, metal oxides, organics, etc...) and addressing), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard

van Tiggelen, Bart

190

Environmentally focused patterning and processing of polymer thin films by initiated chemical vapor deposition (iCVD) and oxidative chemical vapor deposition (oCVD)  

E-Print Network (OSTI)

The new millennium has brought fourth many technological innovations made possible by the advancement of high speed integrated circuits. The materials and energy requirements for a microchip is orders of magnitude higher ...

Trujillo, Nathan J. (Nathan Jeffrey)

2010-01-01T23:59:59.000Z

191

Cyclic catalytic upgrading of chemical species using metal oxide materials  

DOE Patents (OSTI)

Processes are disclosure which comprise alternately contacting an oxygen-carrying catalyst with a reducing substance, or a lower partial pressure of an oxidizing gas, and then with the oxidizing gas or a higher partial pressure of the oxidizing gas, whereby the catalyst is alternately reduced and then regenerated to an oxygenated state. In certain embodiments, the oxygen-carrying catalyst comprises at least one metal oxide-containing material containing a composition having the following formulas: (a) Ce.sub.xB.sub.yB'.sub.zB''O.sub..delta., wherein B=Ba, Sr, Ca, or Zr; B'=Mn, Co, and/or Fe; B''=Cu; 0.01oxides.

White, James H; Schutte, Erick J; Rolfe, Sara L

2013-05-07T23:59:59.000Z

192

Cyclic catalytic upgrading of chemical species using metal oxide materials  

DOE Patents (OSTI)

Processes are disclosure which comprise alternately contacting an oxygen-carrying catalyst with a reducing substance, or a lower partial pressure of an oxidizing gas, and then with the oxidizing gas or a higher partial pressure of the oxidizing gas, whereby the catalyst is alternately reduced and then regenerated to an oxygenated state. In certain embodiments, the oxygen-carrying catalyst comprises at least one metal oxide-containing material containing a composition having one of the following formulas: (a) Ce.sub.xB.sub.yB'.sub.zB''O.sub..delta., wherein B=Ba, Sr, Ca, or Zr; B'=Mn, Co, or Fe; B''=Cu; 0.01

White, James H. (Boulder, CO); Schutte, Erick J. (Thornton, CO); Rolfe, Sara L. (Loveland, CO)

2010-11-02T23:59:59.000Z

193

An in situ investigation of Si[sub x]Ge[sub 1-x] chemical vapor deposition by differential reflectance  

SciTech Connect

An investigation of the surface kinetic processes of low pressure chemical vapor deposition (LPCVD) of Si, Ge, and Si[sub x]Ge[sub 1[minus]x] was carried out using time-resolved differential reflectance measurements. The source gas (disilane, digermane, or mixtures of these two diluted in a helium carrier) was delivered to a heated substrate by a fast-acting modulated molecular jet valve. Thin film growth was studied in the range of 400-500[degrees]C on Si and Ge (001) substrates. The kinetics of chemisorption and of by-product desorption were determined from the surface differential reflectance signal obtained using p-polarized, high-stability HeNe probe laser. Both chemisorption and by-product desorption were fond to obey first-order kinetics. Chemisorption of the parent molecules was found to be relatively efficient and weakly temperature dependent. For pure Si and Ge, by-product desorption occurred through a single first-order reaction. Two first-order desorption steps were inferred for the Si[sub x]Ge[sub 1[minus]x] alloy surfaces. These reactions are believed to be H[sub 2] desorption from Si-like and Ge-like surface sites. However, the activation energy of the more rapid of these two steps actually decreases as the Si content of the film increases. Generally, the films were of high crystalline quality and were very well aligned with the substrate. Preferential incorporation of digermane into the film produced an alloy composition that was Ge-rich relative to the gas composition. The primary accomplishment of this work is the demonstration that the active surface layer of the Si[sub x]Ge[sub 1[minus]x] system can be monitored in situ by an optical probe under typical LPCVD conditions. The results indicate that the rate-limiting step in Si or Ge LPCVD obeys simple first-order kinetics. Further work is needed to understand fully the rate-limiting surface reaction in Si[sub x]Ge[sub 1[minus]x] LPCVD.

Sharp, J.W.

1992-01-01T23:59:59.000Z

194

Development of nanodiamond foils for H- stripping to Support the Spallation Neutron Source (SNS) using hot filament chemical vapor deposition  

SciTech Connect

Thin diamond foils are needed in many particle accelerator experiments regarding nuclear and atomic physics, as well as in some interdisciplinary research. Particularly, nanodiamond texture is attractive for this purpose as it possesses a unique combination of diamond properties such as high thermal conductivity, mechanical strength and high radiation hardness; therefore, it is a potential material for energetic ion beam stripper foils. At the ORNL Spallation Neutron Source (SNS), the installed set of foils must be able to survive a nominal five-month operation period, without the need for unscheduled costly shutdowns and repairs. Thus, a small foil about the size of a postage stamp is critical to the operation of SNS and similar sources in U.S. laboratories and around the world. We are investigating nanocrystalline, polycrystalline and their admixture films fabricated using a hot filament chemical vapor deposition (HFCVD) system for H- stripping to support the SNS at Oak Ridge National Laboratory. Here we discuss optimization of process variables such as substrate temperature, process gas ratio of H2/Ar/CH4, substrate to filament distance, filament temperature, carburization conditions, and filament geometry to achieve high purity diamond foils on patterned silicon substrates with manageable intrinsic and thermal stresses so that they can be released as free standing foils without curling. An in situ laser reflectance interferometry tool (LRI) is used for monitoring the growth characteristics of the diamond thin film materials. The optimization process has yielded free standing foils with no pinholes. The sp3/sp2 bonds are controlled to optimize electrical resistivity to reduce the possibility of surface charging of the foils. The integrated LRI and HFCVD process provides real time information on the growth of films and can quickly illustrate growth features and control film thickness. The results are discussed in the light of development of nanodiamond foils that will be able to withstand a few MW proton beam and hopefully will be able to be used after possible future upgrades to the SNS to greater than a 3MW beam.

Vispute, R D [Blue Wave Semiconductors; Ermer, Henry K [Blue Wave Semiconductors; Sinsky, Phillip [Blue Wave Semiconductors; Seiser, Andrew [Blue Wave Semiconductors; Shaw, Robert W [ORNL; Wilson, Leslie L [ORNL

2014-01-01T23:59:59.000Z

195

Use of amine oxide surfactants for chemical flooding EOR (enhanced oil recovery)  

SciTech Connect

The use of amine oxides with and without alcohols as cosolvents, and in combination with other surfactants as mixed micellar formulations for enhanced oil recovery by surfactant flooding was investigated. Amine oxides are a salt-tolerant class of surfactants that produce low interfacial tension and can develop viscosity without the addition of polymers. These salt-tolerant formulations generate three-phase regions with hydrocarbons over a broad salinity range, develop moderate solubilization, and produce low interfacial tensions, however oil recovery from amine oxide-alcohol phase behavior optimized formulations was directly dependent upon the quantity of surfactant injected. The large pore volume and high concentration of surfactant required prohibits their economic use as the primary surfactant in chemical flooding EOR. Dimethylalkylamine oxides are useful as cosurfactants and viscosifiers in formulations with other surfactants for chemical flooding EOR but the use of ethoxylated and propoxylated amine oxides should be avoided due to the decomposition of these amine oxides under reservoir conditions. Phase behavior, phase inversion temperatures, and viscosity scans have been correlated with surfactant structures to provide a guide for amine oxide applications in chemical flooding. 36 refs., 5 figs., 6 tabs.

Olsen, D.K.

1989-11-01T23:59:59.000Z

196

The optimization of interfaces in InAsSb/InGaAs strained-layer superlattices grown by metal-organic chemical vapor deposition  

SciTech Connect

We have prepared InAsSb/InGaAs strained-layer superlattice (SLS) semiconductors by metal-organic chemical vapor deposition (MOCVD) under a variety of conditions. Presence of an InGaAsSb interface layer is indicated by x-ray diffraction patterns. Optimized growth conditions involved the use of low pressure, short purge times, and no reactant flow during the purges. MOCVD was used to prepare an optically pumped, single heterostructure InAsSb/InGaAs SLS/InPSb laser which emitted at 3.9 {mu}m with a maximum operating temperature of approximately 100 K.

Biefeld, R.M.; Baucom, K.C.; Kurtz, S.R.

1993-12-31T23:59:59.000Z

197

Atomic-scale chemical quantification of oxide interfaces using energy-dispersive X-ray spectroscopy  

SciTech Connect

Atomic-scale quantification of chemical composition across oxide interfaces is important for understanding physical properties of epitaxial oxide nanostructures. Energy-dispersive X-ray spectroscopy (EDS) in an aberration-corrected scanning transmission electron microscope was used to quantify chemical composition across the interface of ferromagnetic La{sub 0.7}Sr{sub 0.3}MnO{sub 3} and antiferromagnetic BiFeO{sub 3} quantum structure. This research demonstrates that chemical composition at atomic columns can be quantified by Gaussian peak-fitting of EDS compositional profiles across the interface. Cation diffusion was observed at both A- and B-sublattice sites; and asymmetric chemical profiles exist across the interface, consistent with the previous studies.

Lu, Ping; Van Benthem, Mark [Sandia National Laboratories, P.O. Box 5800, MS 1411, Albuquerque, New Mexico 87185-1411 (United States)] [Sandia National Laboratories, P.O. Box 5800, MS 1411, Albuquerque, New Mexico 87185-1411 (United States); Xiong, Jie; Jia, Quanxi [Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

2013-04-29T23:59:59.000Z

198

Synergetic effects of mixed copper-iron oxides oxygen carriers in chemical looping combustion  

SciTech Connect

Chemical looping combustion (CLC) is an emerging technology for clean energy production from fuels. CLC produces sequestration-ready CO{sub 2}-streams without a significant energy penalty. Development of efficient oxygen carriers is essential to successfully operate a CLC system. Copper and iron oxides are promising candidates for CLC. Copper oxide possesses high reactivity but it has issues with particle agglomeration due to its low melting point. Even though iron oxide is an inexpensive oxygen carrier it has a slower reactivity. In this study, mixed metal oxide carriers containing iron and copper oxides were evaluated for coal and methane CLC. The components of CuO and Fe{sub 2}O{sub 3} were optimized to obtain good reactivity while maintaining physical and chemical stability during cyclic reactions for methane-CLC and solid-fuel CLC. Compared with single metal oxygen carriers, the optimized CuFe mixed oxide oxygen carriers demonstrated high reaction rate, better combustion conversion, greater oxygen usage and improved physical stability. Thermodynamic calculations, XRD, TGA, flow reactor studies and TPR experiments suggested that there is a strong interaction between CuO and Fe{sub 2}O{sub 3} contributing to a synergistic effect during CLC reactions. The amount of oxygen release of the mixed oxide carrier in the absence of a fuel was similar to that of the single metal oxides. However, in the presence of fuels, the oxygen consumption and the reaction profiles of the mixed oxide carriers were significantly better than that of the single metal oxides. The nature of the fuel not only influenced the reactivity, but also the final reduction status of the oxygen carriers during chemical looping combustion. Cu oxide of the mixed oxide was fully reduced metallic copper with both coal and methane. Fe oxide of the mixed oxide was fully reduced Fe metal with methane but it was reduced to only FeO with coal. Possible mechanisms of how the presence of CuO enhances the reduction of Fe{sub 2}O{sub 3} are discussed.

Siriwardane, Ranjani; Tian, Hanjing; Simonyi, Thomas; Poston, James

2013-06-01T23:59:59.000Z

199

Vapor deposition of tantalum and tantalum compounds  

SciTech Connect

Tantalum, and many of its compounds, can be deposited as coatings with techniques ranging from pure, thermal chemical vapor deposition to pure physical vapor deposition. This review concentrates on chemical vapor deposition techniques. The paper takes a historical approach. The authors review classical, metal halide-based techniques and current techniques for tantalum chemical vapor deposition. The advantages and limitations of the techniques will be compared. The need for new lower temperature processes and hence new precursor chemicals will be examined and explained. In the last section, they add some speculation as to possible new, low-temperature precursors for tantalum chemical vapor deposition.

Trkula, M. [Los Alamos National Lab., NM (United States). Materials Science and Technology Div.

1996-04-01T23:59:59.000Z

200

Reducible Oxide Based Oxygen Carriers for Chemical Looping Combustion and Partial Oxidation of Methane.  

E-Print Network (OSTI)

??Chemical looping combustion (CLC) is a novel combustion technology that offers a highly efficient route towards clean combustion of fuel with inherent CO2 capture. In (more)

Bhavsar, Saurabh

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Low-pressure chemical vapor deposition of amorphous silicon photovoltaic devices. Annual technical progress report, 1 May 1984-30 April 1985  

SciTech Connect

Intrinsic and doped a-Si:H films were deposited by low pressure chemical vapor deposition (CVD) for disilane. Intrinsic layers were deposited at growth rates as high as 50 A/s. A chemical reaction engineering model that quantitatively describes the CVD reactor behavior has been developed. CVD intrinsic material was characterized by measurements of impurities, optical band gap, photoconductivity, activation energy, diffusion length, and density of states. Photovoltaic cells of the p-i-n type with efficiencies of 4% and 3.6% were fabricated using CVD intrinsic layers deposited at 1 A/s and 9 A/s, respectively. A maximum short-circuit current of 11 mA/cm/sup 2/ under 87.5 MW/cm/sup 2/ ELH illumination was obtained with boron-compensated CVD intrinsic material. Efficiency-limiting mechanisms in CVD cells were quantitatively analyzed and related to fundamental properties.

Baron, B.N.; Rocheleau, R.E.; Hegedus, S.S.

1986-02-01T23:59:59.000Z

202

Comparison of Short-Term Oxidation Behavior of Model and Commercial Chromia-Forming Ferritic Stainless Steels in Air with Water Vapor  

SciTech Connect

A high-purity Fe-20Cr and commercial type 430 ferritic stainless steel were exposed at 700 and 800 C in dry air and air with 10% water vapor (wet air) and characterized by SEM, XRD, STEM, SIMS, and EPMA. The Fe-20Cr alloy formed a fast growing Fe-rich oxide scale at 700 C in wet air after 24 h exposure, but formed a thin chromia scale at 700 C in dry air and at 800 C in both dry air and wet air. In contrast, thin spinel + chromia base scales with a discontinuous silica subscale were formed on 430 stainless steel under all conditions studied. Extensive void formation was observed at the alloy-oxide interface for the Fe-20Cr in both dry and wet conditions, but not for the 430 stainless steel. The Fe-20Cr alloy was found to exhibit a greater relative extent of subsurface Cr depletion than the 430 stainless steel, despite the former's higher Cr content. Depletion of Cr in the Fe-20Cr after 24 h exposure was also greater at 700 C than 800 C. The relative differences in oxidation behavior are discussed in terms of the coarse alloy grain size of the high-purity Fe-20Cr material, and the effects of Mn, Si, and C on the oxide scale formed on the 430 stainless steel.

Brady, Michael P [ORNL; Keiser, James R [ORNL; More, Karren Leslie [ORNL; Fayek, Mostafa [University of Manitoba, Canada; Walker, Larry R [ORNL; Meisner, Roberta Ann [ORNL; Anovitz, Lawrence {Larry} M [ORNL; Wesolowski, David J [ORNL; Cole, David R [ORNL

2012-01-01T23:59:59.000Z

203

Screening values for Non-Carcinogenic Hanford Waste Tank Vapor Chemicals that Lack Established Occupational Exposure Limits  

SciTech Connect

Over 1,500 different volatile chemicals have been reported in the headspaces of tanks used to store high-level radioactive waste at the U.S. Department of Energy's Hanford Site. Concern about potential exposure of tank farm workers to these chemicals has prompted efforts to evaluate their toxicity, identify chemicals that pose the greatest risk, and incorporate that information into the tank farms industrial hygiene worker protection program. Established occupation exposure limits for individual chemicals and petroleum hydrocarbon mixtures have been used elsewhere to evaluate about 900 of the chemicals. In this report headspace concentration screening values were established for the remaining 600 chemicals using available industrial hygiene and toxicological data. Screening values were intended to be more than an order of magnitude below concentrations that may cause adverse health effects in workers, assuming a 40-hour/week occupational exposure. Screening values were compared to the maximum reported headspace concentrations.

Poet, Torka S.; Mast, Terryl J.; Huckaby, James L.

2006-02-06T23:59:59.000Z

204

Characterization of photoluminescent (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3} thin-films prepared by metallorganic chemical vapor deposition  

SciTech Connect

Europium doped yttrium oxide, (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3}, thin-films were deposited on silicon and sapphire substrates by metallorganic chemical vapor deposition (MOCVD). The films were grown in a MOCVD chamber reacting yttrium and europium tris(2,2,6,6-tetramethyl-3,5,-heptanedionates) precursors in an oxygen atmosphere at low pressures (5 Torr) and low substrate temperatures (500--700 C). The films deposited at 500 C were flat and composed of nanocrystalline regions of cubic Y{sub 2}O{sub 3}, grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600 C developed from the flat, nanocrystalline morphology into a plate-like growth morphology oriented in the [111] with increasing deposition time. Monoclinic Y{sub 2}O{sub 3}:Eu{sup 3+} was observed in x-ray diffraction for deposition temperatures {ge}600 C on both (111) Si and (001) sapphire substrates. This was also confirmed by the photoluminescent emission spectra.

McKittrick, J.; Bacalski, C.F.; Hirata, G.A. [Univ. of California, San Diego, La Jolla, CA (United States); Hubbard, K.M.; Pattillo, S.G.; Salazar, K.V.; Trkula, M. [Los Alamos National Lab., NM (United States). Materials Science and Technology Div.

1998-12-01T23:59:59.000Z

205

Amorphous silicon photovoltaic devices prepared by chemical and photochemical vapor deposition of higher order silanes. Technical progress report, 1 September 1984-28 February 1985  

SciTech Connect

This report describes the preparation of hydrogenated amorphous silicon (a-Si:H) films and photovoltaic devices by chemical vapor deposition (CVD) from higher order silanes, and the properties of such films and devices. The research is directed at exploring new, improved deposition techniques to produce a-Si:H. The improvement could stem from ease of deposition (lower cost and/or better reproducibility), from material improvement (higher efficiency and/or better stability under illumination), or from innovative materials that improve device performance. Research efforts have focused, therefore, on photo-CVD techniques; thermal CVD has been emphasized. This report summarizes the properties of the experimental thermal CVD films and the reasons for terminating the research in this area. In addition, the results for deposition by mercury-sensitized decomposition of disilane are presented. These results indicate that this technique is a very promising alternative to the glow-discharge method.

Delahoy, A.E.; Ellis, F.B. Jr.

1985-05-01T23:59:59.000Z

206

Amorphous silicon photovoltaic devices prepared by chemical and photochemical vapor deposition of higher order silanes. Annual subcontract progress report, 1 September 1984-31 August 1985  

SciTech Connect

This report describes the preparation of hydrogenated amorphous silicon (a-Si:H) films and photovoltaic devices by chemical vapor deposition (CVD) from higher order silanes and the properties of such films and devices. The research explored new deposition techniques that could produce a-Si:H superior to that achieved by the glow-discharge method. For example, the improvement could stem from ease of deposition (lower cost and/or better reproducibility), from material improvement (higher efficiency and/or better stability under illumination), or from innovative materials that improve device performance. Research focused on photo-CVD techniques; thermal CVD deemphasized. This report presents results for deposition by mercury-sensitized decomposition of disilane. These results indicate that this technique is a very promising alternative to the glow-discharge method.

Delahoy, A.E.; Ellis, F.B. Jr.

1985-11-01T23:59:59.000Z

207

Properties of chemical vapor deposited tungsten silicide films using reaction of WF/sub 6/ and Si/sub 2/H/sub 6/  

SciTech Connect

Tungsten silicide films were formed by the chemical vapor deposition method using the reaction WF/sub 6/ and Si/sub 2/H/sub 6/. The deposition rate, resistivity, composition, stress, crystal structure, and content of impurities were studied and compared with tungsten silicide films deposited by reaction of WF/sub 6/ and SiH/sub 4/. The tungsten silicide films made using Si/sub 2/H/sub 6/ have a higher deposition rate and higher Si concentration than those made by using SiH/sub 4/ at the same substrate temperature. For these reasons, the tungsten silicide films made by using Si/sub 2/H/sub 6/ were found to have a resistivity that is a little higher and, after annealing, a stress that is smaller than that made by SiH/sub 4/.

Shioya, Y.; Ikegami, K.; Kobayashi, I.; Maeda, M.

1987-05-01T23:59:59.000Z

208

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition  

SciTech Connect

We propose to grow graphene on SiC by a direct carbon feeding through propane flow in a chemical vapor deposition reactor. X-ray photoemission and low energy electron diffraction show that propane allows to grow few-layer graphene (FLG) on 6H-SiC(0001). Surprisingly, FLG grown on (0001) face presents a rotational disorder similar to that observed for FLG obtained by annealing on (000-1) face. Thanks to a reduced growth temperature with respect to the classical SiC annealing method, we have also grown FLG/3C-SiC/Si(111) in a single growth sequence. This opens the way for large-scale production of graphene-based devices on silicon substrate.

Michon, A.; Vezian, S.; Portail, M. [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France); Ouerghi, A. [CNRS-LPN, Route de Nozay, 91460 Marcoussis (France); Zielinski, M.; Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)

2010-10-25T23:59:59.000Z

209

Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits  

SciTech Connect

Single layer graphene (SLG) grown by chemical vapor deposition (CVD) has been investigated for its prospective application as horizontal interconnects in very large scale integrated circuits. However, the major bottleneck for its successful application is its degraded electronic transport properties due to the resist residual trapped in the grain boundaries and on the surface of the polycrystalline CVD graphene during multi-step lithographic processes, leading to increase in its sheet resistance up to 5 M?/sq. To overcome this problem, current induced annealing has been employed, which helps to bring down the sheet resistance to 10?k?/sq (of the order of its initial value). Moreover, the maximum current density of ?1.2??10{sup 7?}A/cm{sup 2} has been obtained for SLG (1??2.5??m{sup 2}) on SiO{sub 2}/Si substrate, which is about an order higher than that of conventionally used copper interconnects.

Prasad, Neetu, E-mail: neetu.prasad@south.du.ac.in, E-mail: neetu23686@gmail.com; Kumari, Anita; Bhatnagar, P. K.; Mathur, P. C. [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India); Bhatia, C. S. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2014-09-15T23:59:59.000Z

210

Optimization of InAsSb/InGaAs strained-layer superlattice growth by metal-organic chemical vapor deposition for use in infrared emitters  

SciTech Connect

We have prepared InAsSb/InGaAs strained-layer superlattices (SLSs) by metal-organic chemical vapor deposition using a variety of growth conditions. Presence of an InGaAsSb interface layer was indicated by x-ray diffraction. This interface effect was minimized by optimizing the purge times, reactant flows, and growth conditions. The optimized growth conditions involved the use of low pressure, short purge times between the growth of the layers, and no reactant flow during the purges. Electron diffraction indicates that CuPt-type compositional ordering occurs in InAs{sub 1{minus}x}Sb{sub x} alloys and SLSs which explains an observed bandgap reduction from previously accepted alloy values.

Biefeld, R.M.; Baucom, K.C.; Follstaedt, D.M.; Kurtz, S.R.

1994-08-01T23:59:59.000Z

211

The relationship between structural evolution and electrical percolation of the initial stages of tungsten chemical vapor deposition on polycrystalline TiN  

SciTech Connect

This paper presents experimental results and a geometric model of the evolution of sheet resistance and surface morphology during the transition from nucleation to percolation of tungsten chemical vapor deposition over ultrathin polycrystalline titanium nitride (TiN). We observed two mechanisms of reduction in sheet resistance. At deposition temperatures higher than 310 deg. C, percolation effect is formed at {approx}35% of surface coverage, {theta}, and characterized with a sharp drop in resistance. At temperature below 310 deg. C, a reduction in resistance occurs in two steps. The first step occurs when {theta} = 35% and the second step at {theta} = 85%. We suggest a geometric model in which the electrical percolation pass is modulated by the thickness threshold of the islands at the instant of collision.

Rozenblat, A. [Micron Semiconductors Israel Ltd., Qiryat-Gat 82109 (Israel); Department of Physical Electronics, Electrical Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Haimson, S. [Material Science Program, Tel Aviv University, Tel Aviv 69978 (Israel); Shacham-Diamand, Y. [Department of Physical Electronics, Electrical Engineering, Tel Aviv University, Tel Aviv 69978 (Israel); Horvitz, D. [Micron Semiconductors Israel Ltd., Qiryat-Gat 82109 (Israel)

2012-01-16T23:59:59.000Z

212

Chemical-looping combustion of coal-derived synthesis gas over copper oxide oxygen carriers  

SciTech Connect

CuO/bentonite and CuO-BHA nanocomposites were studied as oxygen carriers in chemical-looping combustion (CLC) of simulated synthesis gas. Global reaction rates of reduction and oxidation, as the function of reaction conversion, were calculated from 10-cycle oxidation/reduction tests utilizing thermogravimetric analysis at atmospheric pressure between 700 and 900 C. It was found that the reduction reactions are always faster than oxidation reactions; reaction temperature and particle size do not significantly affect the reaction performance of CuO/bentonite. Multicycle CLC tests conducted in a high-pressure flow reactor showed stable reactivity for production of CO2 from fuel gas at 800 and 900 C and full consumption of hydrogen during the reaction. Results of the tapered element oscillating microbalance showed a negative effect of pressure on the global rates of reduction-oxidation reactions at higher fractional conversions. X-ray diffraction patterns confirmed the presence of CuO in the bulk phase of the oxidized sample. Electron microanalysis showed significant morphology changes of reacted CuO/bentonite samples after the 10 oxidation-reduction cycles above 700 C in an atmospheric thermogravimetric analyzer. The nanostructured CuO-BHA carrier also showed excellent stability and, in comparison to the CuO/bentonite system, slightly accelerated redox kinetics albeit at the expense of significantly increased complexity of manufacturing. Overall, both types of CuO carriers exhibited excellent reaction performance and thermal stability for the CLC process at 700-900 C.

Tian, H.; Chaudhari, K.; Simonyi, T.; Poston, J.; Liu, T.; Sanders, T.; Veser, G.; Siriwardane, R.

2008-01-01T23:59:59.000Z

213

Chemical-looping combustion of coal-derived synthesis gas over copper oxide oxygen carriers  

SciTech Connect

CuO/bentonite and CuO?BHA nanocomposites were studied as oxygen carriers in chemical-looping combustion (CLC) of simulated synthesis gas. Global reaction rates of reduction and oxidation, as the function of reaction conversion, were calculated from 10-cycle oxidation/reduction tests utilizing thermogravimetric analysis at atmospheric pressure between 700 and 900 C. It was found that the reduction reactions are always faster than oxidation reactions; reaction temperature and particle size do not significantly affect the reaction performance of CuO/bentonite. Multicycle CLC tests conducted in a high-pressure flow reactor showed stable reactivity for production of CO2 from fuel gas at 800 and 900 C and full consumption of hydrogen during the reaction. Results of the tapered element oscillating microbalance showed a negative effect of pressure on the global rates of reduction?oxidation reactions at higher fractional conversions. X-ray diffraction patterns confirmed the presence of CuO in the bulk phase of the oxidized sample. Electron microanalysis showed significant morphology changes of reacted CuO/bentonite samples after the 10 oxidation?reduction cycles above 700 C in an atmospheric thermogravimetric analyzer. The nanostructured CuO?BHA carrier also showed excellent stability and, in comparison to the CuO/bentonite system, slightly accelerated redox kinetics albeit at the expense of significantly increased complexity of manufacturing. Overall, both types of CuO carriers exhibited excellent reaction performance and thermal stability for the CLC process at 700?900 C.

Tian, Hanjing; Chaudhari, K.P.; Simonyi, Thomas; Poston, J.A.; Liu, Tengfei; Sanders, Tom; Veser, Goetz; Siriwardane, R.V.

2008-11-01T23:59:59.000Z

214

Copolymerization of divinylbenzene and 4-vinylpyridine using initiated chemical vapor deposition for surface modification and its applications  

E-Print Network (OSTI)

This research investigates the copolymerization of divinylbenzene and 4- vinylpyridine into organic thin films that exhibit conformal, stable, and uniform surface properties. Thin films were grown using initiated chemical ...

Martinez, Ernesto, S.B. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

215

Growth of High Aspect Ratio Nanometer-Scale Magnets with Chemical Vapor Deposition and Scanning Tunneling Microscopy  

Science Journals Connector (OSTI)

...50 pA). A contamination coating around a denser Fig. 4...deposit with the contamination coating is thus stable against oxidation...of nanoscale filaments and thin film nucleation and growth theory...Instruments-ARIS 5100 UHV-STM. 13. An optical microscope provides a view...

Andrew D. Kent; Thomas M. Shaw; Stephan von Molnr; David D. Awschalom

1993-11-19T23:59:59.000Z

216

Process Optimization for High Efficiency Heterojunction c-Si Solar Cells Fabrication Using Hot-Wire Chemical Vapor Deposition: Preprint  

SciTech Connect

The researchers extensively studied the effects of annealing or thermal history of cell process on the minority carrier lifetimes of FZ n-type c-Si wafers with various i-layer thicknesses from 5 to 60 nm, substrate temperatures from 100 to 350 degrees C, doped layers both p- and n-types, and transparent conducting oxide (TCO).

Ai, Y.; Yuan, H. C.; Page, M.; Nemeth, W.; Roybal, L.; Wang, Q.

2012-06-01T23:59:59.000Z

217

Study of the effect of the acid-base surface properties of ZnO, Fe{sub 2}O{sub 3} and ZnFe{sub 2}O{sub 4} oxides on their gas sensitivity to ethanol vapor  

SciTech Connect

Binary (ZnO, Fe{sub 2}O{sub 3}) and ternary (ZnFe{sub 2}O{sub 4}) gas-sensitive oxide materials are synthesized, and the correlation between their sensitivity to ethanol vapor and the functional chemical composition of the surface is studied by X-ray photoelectron spectroscopy and by the technique of the adsorption of acid-base indicators. It is found that the sensitivity to ethanol increases with increasing content of Broensted acid sites with the acidity index pK{sub a} Almost-Equal-To 2.5 and with increasing percentage of surface oxygen involved in OH/CO{sub 3}/C-O groups. This interrelation is attributed to the specific features of interaction between ethanol molecules and hydroxyl groups on the surface of the oxides.

Karpova, S. S., E-mail: sskarpova@list.ru; Moshnikov, V. A.; Maksimov, A. I. [St. Petersburg State Electrotechnical University 'LETI' (Russian Federation)] [St. Petersburg State Electrotechnical University 'LETI' (Russian Federation); Mjakin, S. V. [St. Petersburg State Institute of Technology (Technical University) (Russian Federation)] [St. Petersburg State Institute of Technology (Technical University) (Russian Federation); Kazantseva, N. E. [Tomas Bata University in Zlin (Czech Republic)] [Tomas Bata University in Zlin (Czech Republic)

2013-08-15T23:59:59.000Z

218

Synthesis of Metal Oxide Nanomaterials for Chemical Sensors by Molecular Beam Epitaxy  

SciTech Connect

Since the industrial revolution, detection and monitoring of toxic matter, chemical wastes, and air pollutants has become an important environmental issue. Thus, it leads to the development of chemical sensors for various environmental applications. The recent disastrous oil spills over the near-surface of ocean due to the offshore drilling emphasize the use of chemical sensors for prevention and monitoring of the processes that might lead to these mishaps.1, 2 Chemical sensors operated on a simple principle that the sensing platform undergoes a detectable change when exposed to the target substance to be sensed. Among all the types of chemical sensors, solid state gas sensors have attracted a great deal of attention due to their advantages such as high sensitivity, greater selectivity, portability, high stability and low cost.3, 4 Especially, semiconducting metal oxides such as SnO2, TiO2, and WO3 have been widely used as the active sensing platforms in solid state gas sensors.5 For the enhanced properties of solid state gas sensors, finding new sensing materials or development of existing materials will be needed. Thus, nanostructured materials such as nanotubes,6-8 nanowires,9-11 nanorods,12-15 nanobelts,16, 17 and nano-scale thin films18-23 have been synthesized and studied for chemical sensing applications.

Nandasiri, Manjula I.; Kuchibhatla, Satyanarayana V N T; Thevuthasan, Suntharampillai

2013-12-01T23:59:59.000Z

219

A quantum chemical study of nitric oxide reduction by ammonia (SCR reaction) on V2O5 catalyst surface  

E-Print Network (OSTI)

A quantum chemical study of nitric oxide reduction by ammonia (SCR reaction) on V2O5 catalyst for the selective catalytic reduction (SCR) of nitric oxide by ammonia on (0 1 0) V2O5 surface represented by a V2O9/6-31G** level. The computations indicated that SCR reaction consisted of three main parts

Senkan, Selim M.

220

Chemical-looping combustion of coal-derived synthesis gas over copper oxide oxygen carriers  

SciTech Connect

CuO/bentonite and CuO-BHA nanocomposites were studied as oxygen carriers in chemical-looping combustion (CLC) of simulated synthesis gas. Global reaction rates of reduction and oxidation, as the function of reaction conversion, were calculated from 10-cycle oxidation/reduction tests utilizing thermogravimetric analysis at atmospheric pressure between 700 and 900{degree}C. It was found that the reduction reactions are always faster than oxidation reactions; reaction temperature and particle size do not significantly affect the reaction performance of CuO/bentonite. Multicycle CLC tests conducted in a high-pressure flow reactor showed stable reactivity for production of CO{sub 2} from fuel gas at 800 and 900{degree}C and full consumption of hydrogen during the reaction. Results of the tapered element oscillating microbalance showed a negative effect of pressure on the global rates of reduction-oxidation reactions at higher fractional conversions. X-ray diffraction patterns confirmed the presence of CuO in the bulk phase of the oxidized sample. Electron microanalysis showed significant morphology changes of reacted CuO/bentonite samples after the 10 oxidation-reduction cycles above 700{degree}C in an atmospheric thermogravimetric analyzer. The nanostructured CuO-BHA carrier also showed excellent stability and, in comparison to the CuO/bentonite system, slightly accelerated redox kinetics albeit at the expense of significantly increased complexity of manufacturing. Overall, both types of CuO carriers exhibited excellent reaction performance and thermal stability for the CLC process at 700-900{degree}C. 48 refs., 12 figs., 8 tabs.

Hanjing Tian; Karuna Chaudhari; Thomas Simonyi; James Poston; Tengfei Liu; Tom Sanders; Goetz Veser; Ranjani Siriwardane [U.S. Department of Energy, Morgantown, WV (United States). National Energy Technology Laboratory

2008-11-15T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes  

SciTech Connect

Ferroelectric hafnium oxide films were fabricated by chemical solution deposition with a remnant polarization of >13 ?C/cm{sup 2}. The samples were prepared with 5.2?mol.?% yttrium-doping and the thickness varied from 18?nm to 70?nm. The hafnium oxide layer was integrated into a metal-insulator-metal capacitor using platinum electrodes. Due to the processing procedure, no thickness dependence of the ferroelectric properties was observed. To confirm the ferroelectric nature of the deposited samples, polarization, capacitance, and piezoelectric displacement measurements were performed. However, no evidence of the orthorhombic phase was found which has been proposed to be the non-centrosymmetric, ferroelectric phase in HfO{sub 2}.

Starschich, S.; Griesche, D.; Schneller, T.; Bttger, U. [Institut fr Werkstoffe der Elektrotechnik 2, RWTH Aachen University, Sommerfeldstrae 24, D-52074 Aachen (Germany); Waser, R. [Institut fr Werkstoffe der Elektrotechnik 2, RWTH Aachen University, Sommerfeldstrae 24, D-52074 Aachen (Germany); Peter Grnberg Institut 7, Forschungszentrum Jlich GmbH, D-52425 Jlich (Germany)

2014-05-19T23:59:59.000Z

222

Detailed chemical kinetic mechanism for the oxidation of biodiesel fuels blend surrogate.  

SciTech Connect

Detailed chemical kinetic mechanisms were developed and used to study the oxidation of two large unsaturated esters: methyl-5-decenoate and methyl-9-decenoate. These models were built from a previous methyl decanoate mechanism and were compared with rapeseed oil methyl esters oxidation experiments in a jet stirred reactor. A comparative study of the reactivity of these three oxygenated compounds was performed and the differences in the distribution of the products of the reaction were highlighted showing the influence of the presence and the position of a double bond in the chain. Blend surrogates, containing methyl decanoate, methyl-5-decenoate, methyl-9-decenoate and n-alkanes, were tested against rapeseed oil methyl esters and methyl palmitate/n-decane experiments. These surrogate models are realistic kinetic tools allowing the study of the combustion of biodiesel fuels in diesel and homogeneous charge compression ignition engines.

Herbinet, O; Pitz, W J; Westbrook, C K

2009-07-21T23:59:59.000Z

223

Chemical-looping combustion of simulated synthesis gas using nickel oxide oxygen carrier supported on bentonite  

SciTech Connect

Chemical-looping combustion (CLC) is a combustion technology for clean and efficient utilization of fossil fuels for energy production. This process which produces sequestration ready CO2 systems is a promising technology to be utilized with coal gasification systems. In the present work, chemical-looping combustion has been studied with an oxygen carrier, NiO/bentonite (60 wt % NiO) for the gasification systems utilizing simulated synthesis gas. Global reaction rates of reduction and oxidation as a function of conversion were calculated for oxidation-reduction cycles utilizing the thermogravimetric analysis (TGA) data on multicycle tests conducted with NiO/bentonite at atmospheric pressure between 700 and 900 C. The rate of reduction increased slightly with an increase in temperature, while the rate of oxidation decreased at 900 C. The effect of particle size of the oxygen carrier on CLC was studied for the particle size between 20 and 200 mesh. The rates of reactions depended on the particle size of the oxygen carrier. The smaller the particle size, the higher the reaction rates. The multicycle CLC tests conducted in a high-pressure flow reactor showed stable reactivity for the production of CO2 from fuel gas at 800 and 900 C and full consumption of hydrogen during the reaction. The data from a one cycle test on the effect of the pressure on the performance with NiO/bentonite utilizing the tapered element oscillating microbalance (TEOM) showed a positive effect of the pressure on the global rates of reduction-oxidation reactions at higher fractional conversions. The X-ray diffraction (XRD) analysis confirmed the presence of the NiO phase in NiO/bentonite with the oxidized sample in the highpressure reactor and Ni phase with the reduced sample. The presence of a small amount of NiO in the reduced sample detected by X-ray photoelectron spectroscopy (XPS) may be due to its exposure to air during sample transfer from the reactor to XPS. Scanning electron microscopy (SEM) analysis showed no significant changes in morphology of NiO/bentonite reacted in the temperature range 700-800 C in an atmospheric TGA for 10 oxidation-reduction cycles, but some loss of surface area and porosity was observed at 900 C. This effect was found to be greater with increase in the particle size of the oxygen carrier.

Siriwardane, R.V.; Chaudhari, K.; Poston, J.A.; Zinn, A.; Simonyi, T.; Robinson, C.

2007-05-01T23:59:59.000Z

224

Chemical-looping combustion of coal with metal oxide oxygen carriers  

SciTech Connect

The combustion and reoxidation properties of direct coal chemical-looping combustion (CLC) over CuO, Fe{sub 2}O{sub 3}, CO{sub 3}O{sub 4}, NiO, and Mn{sub 2}O{sub 3} were investigated using thermogravimetric analysis (TGA) and bench-scale fixed-bed flow reactor studies. When coal is heated in either nitrogen or carbon dioxide (CO{sub 2}), 50% of weight loss was observed because of partial pyrolysis, consistent with the proximate analysis. Among various metal oxides evaluated, CuO showed the best reaction properties: CuO can initiate the reduction reaction as low as 500{sup o}C and complete the full combustion at 700{sup o}C. In addition, the reduced copper can be fully reoxidized by air at 700{sup o}C. The combustion products formed during the CLC reaction of the coal/metal oxide mixture are CO{sub 2} and water, while no carbon monoxide was observed. Multicycle TGA tests and bench-scale fixed-bed flow reactor tests strongly supported the feasibility of CLC of coal by using CuO as an oxygen carrier. Scanning electron microscopy (SEM) images of solid reaction products indicated some changes in the surface morphology of a CuO-coal sample after reduction/oxidation reactions at 800 {sup o}C. However, significant surface sintering was not observed. The interactions of fly ash with metal oxides were investigated by X-ray diffraction and thermodynamic analysis. Overall, the results indicated that it is feasible to develop CLC with coal by metal oxides as oxygen carriers. 22 refs., 12 figs., 2 tabs.

Ranjani Siriwardane; Hanjing Tian; George Richards; Thomas Simonyi; James Poston [United States Department of Energy, Morgantown, WN (United States). National Energy Technology Laboratory

2009-08-15T23:59:59.000Z

225

Evaluation of reaction mechanism of coal-metal oxide interactions in chemical-looping combustion  

SciTech Connect

The knowledge of reaction mechanism is very important in designing reactors for chemical-looping combustion (CLC) of coal. Recent CLC studies have considered the more technically difficult problem of reactions between abundant solid fuels (i.e. coal and waste streams) and solid metal oxides. A definitive reaction mechanism has not been reported for CLC reaction of solid fuels. It has often been assumed that the solid/solid reaction is slow and therefore requires that reactions be conducted at temperatures high enough to gasify the solid fuel, or decompose the metal oxide. In contrast, data presented in this paper demonstrates that solid/solid reactions can be completed at much lower temperatures, with rates that are technically useful as long as adequate fuel/metal oxide contact is achieved. Density functional theory (DFT) simulations as well as experimental techniques such as thermo-gravimetric analysis (TGA), flow reactor studies, in situ X-ray photo electron spectroscopy (XPS), in situ X-ray diffraction (XRD) and scanning electron microscopy (SEM) are used to evaluate how the proximal interaction between solid phases proceeds. The data indicate that carbon induces the Cu-O bond breaking process to initiate the combustion of carbon at temperatures significantly lower than the spontaneous decomposition temperature of CuO, and the type of reducing medium in the vicinity of the metal oxide influences the temperature at which the oxygen release from the metal oxide takes place. Surface melting of Cu and wetting of carbon may contribute to the solid-solid contacts necessary for the reaction. (author)

Siriwardane, Ranjani; Richards, George; Poston, James [US Department of Energy, National Energy Technology Laboratory, 3610 Collins Ferry Road, P.O. Box 880, Morgantown, WV 26507-0880 (United States); Tian, Hanjing; Miller, Duane; Simonyi, Thomas [US Department of Energy, National Energy Technology Laboratory, 3610 Collins Ferry Road, P.O. Box 880, Morgantown, WV 26507-0880 (United States); URS, 3610 Collins Ferry Road, Morgantown, WV 26505 (United States)

2010-11-15T23:59:59.000Z

226

Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition  

SciTech Connect

Graphene growth from a propane flow in a hydrogen environment (propane-hydrogen chemical vapor deposition (CVD)) on SiC differentiates from other growth methods in that it offers the possibility to obtain various graphene structures on the Si-face depending on growth conditions. The different structures include the (6{radical}3 Multiplication-Sign 6{radical}3)-R30 Degree-Sign reconstruction of the graphene/SiC interface, which is commonly observed on the Si-face, but also the rotational disorder which is generally observed on the C-face. In this work, growth mechanisms leading to the formation of the different structures are studied and discussed. For that purpose, we have grown graphene on SiC(0001) (Si-face) using propane-hydrogen CVD at various pressure and temperature and studied these samples extensively by means of low energy electron diffraction and atomic force microscopy. Pressure and temperature conditions leading to the formation of the different structures are identified and plotted in a pressure-temperature diagram. This diagram, together with other characterizations (X-ray photoemission and scanning tunneling microscopy), is the basis of further discussions on the carbon supply mechanisms and on the kinetics effects. The entire work underlines the important role of hydrogen during growth and its effects on the final graphene structure.

Michon, A.; Vezian, S.; Roudon, E.; Lefebvre, D.; Portail, M. [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France)] [CNRS-CRHEA, Rue Bernard Gregory, 06560 Valbonne (France); Zielinski, M.; Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)] [NOVASiC, Savoie Technolac, Arche Bat 4, BP267, 73375 Le Bourget du Lac (France)

2013-05-28T23:59:59.000Z

227

Epitaxial growth of Si1?xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating  

Science Journals Connector (OSTI)

Abstract By using electron-cyclotron-resonance (ECR) Ar-plasma chemical vapor deposition (CVD) without substrate heating, the epitaxial growth process of Si1?xGex alloy and Ge films deposited directly on dilute-HF-treated Si(100) was investigated. From the reflection high energy electron diffraction patterns of the deposited Si1?xGex alloy (x=0.50, 0.75) and Ge films on Si(100), it is confirmed that epitaxial growth can be realized without substrate heating, and that crystallinity degradation at larger film thickness is observed. The X-ray diffraction peak of the epitaxial films reveals the existence of large compressive strain, which is induced by lattice matching with the Si(100) substrate at smaller film thicknesses, as well as strain relaxation behavior at larger film thicknesses. The Ge fraction of Si1?xGex thin film is in good agreement with the normalized GeH4 partial pressure. The Si1?xGex deposition rate increases with an increase of GeH4 partial pressure. The GeH4 partial pressure dependence of partial deposition rates [(Si or Ge fraction)נ(Si1?xGex thickness)/(deposition time)] shows that the Si partial deposition rate is slightly enhanced by the existence of Ge. From these results, it is proposed that the ECR-plasma CVD process can be utilized for Ge fraction control in highly-strained heterostructure formation of group IV semiconductors.

Naofumi Ueno; Masao Sakuraba; Junichi Murota; Shigeo Sato

2014-01-01T23:59:59.000Z

228

Interaction between (La, Sr)MnO3 cathode and NiMoCr metallic interconnect with suppressed chromium vaporization for solid oxide fuel cells  

Science Journals Connector (OSTI)

Interaction between (La0.8Sr0.2)0.90MnO3 (LSM) cathode and newly developed NiMoCr metallic interconnect is investigated at 900C under operation conditions of solid oxide fuel cells (SOFCs). The results show that chromium deposition on the LSM cathodes in the presence of NiMoCr interconnect is remarkably reduced as compared to that in the presence of a conventional FeCr metallic interconnect (RA446). In contact with the NiMo-Cr interconnect the overpotential, ?, for the O2 reduction reaction on LSM cathode decreased from 529 to 111mV during the 1200min current passage at 200mA/cm2. In contrast, ? increased from 464 to 561mV for the reaction in the presence of a RA446 interconnect. The decrease in ? clearly indicates that chromium poisoning effect of the NiMoCr interconnect is also significantly suppressed as compared to that with conventional FeCr interconnect materials. The suppressed Cr deposition and poisoning effects observed on the LSM cathodes demonstrate promising potential of the NiMoCr alloy as new interconnect materials with significant suppressed chromium vaporization and deposition for SOFCs.

Xinbing Chen; Bin Hua; Jian Pu; Jian Li; Lan Zhang; San Ping Jiang

2009-01-01T23:59:59.000Z

229

The one-electron oxidation of a dithiolate molecule: The importance of chemical intuition  

SciTech Connect

A series of nine commonly used density functional methods were assessed to accurately predict the oxidation potential of the (C{sub 2}H{sub 2}S{sub 2}{sup ?2}/C{sub 2}H{sub 2}S{sub 2}{sup ?}) redox couple. It was found that due to their greater tendency for charge delocalization the GGA functionals predict a structure where the radical electron is delocalized within the alkene backbone of C{sub 2}H{sub 2}S{sub 2}{sup ?}, whereas the hybrid functionals and the reference QCISD/cc-pVTZ predict that the radical electron remains localized on the sulfurs. However, chemical intuition suggests that the results obtained with the GGA functionals should be correct. Indeed, with the use of the geometries obtained at the HCTH/6-311++G(3df,3pd) level of theory both the QCISD and hybrid DFT methods yield a molecule with a delocalized electron. Notably, this new molecule lies at least 53 kJ mol{sup ?1} lower in energy than the previously optimized one that had a localized radical. Using these new structures the calculated oxidation potential was found to be 2.712.97 V for the nine DFT functionals tested. The M06-L functional provided the best agreement with the QCISD/cc-pVTZ reference oxidation potential of 3.28 V.

Bushnell, Eric A. C.; Burns, Thomas D.; Boyd, Russell J., E-mail: russell.boyd@dal.ca [Department of Chemistry, Dalhousie University, Halifax, Nova Scotia B3H 4R2 (Canada)

2014-05-14T23:59:59.000Z

230

Unusual Physical and Chemical Properties of Cu in Ce1-xCuxO2 Oxides  

SciTech Connect

The structural and electronic properties of Ce{sub 1-x}Cu{sub x}O{sub 2} nano systems prepared by a reverse microemulsion method were characterized with synchrotron-based X-ray diffraction, X-ray absorption spectroscopy, Raman spectroscopy, and density functional calculations. The Cu atoms embedded in ceria had an oxidation state higher than those of the cations in Cu{sub 2}O or CuO. The lattice of the Ce{sub 1-x}Cu{sub x}O{sub 2} systems still adopted a fluorite-type structure, but it was highly distorted with multiple cation-oxygen distances with respect to the single cation-oxygen bond distance seen in pure ceria. The doping of CeO{sub 2} with copper introduced a large strain into the oxide lattice and favored the formation of O vacancies, leading to a Ce{sub 1-x}Cu{sub x}O{sub 2-y} stoichiometry for our materials. Cu approached the planar geometry characteristic of Cu(II) oxides, but with a strongly perturbed local order. The chemical activities of the Ce{sub 1-x}Cu{sub x}O{sub 2} nanoparticles were tested using the reactions with H2 and O2 as probes. During the reduction in hydrogen, an induction time was observed and became shorter after raising the reaction temperature. The fraction of copper that could be reduced in the Ce{sub 1-x}Cu{sub x}O{sub 2} oxides also depended strongly on the reaction temperature. A comparison with data for the reduction of pure copper oxides indicated that the copper embedded in ceria was much more difficult to reduce. The reduction of the Ce{sub 1-x}Cu{sub x}O{sub 2} nanoparticles was rather reversible, without the generation of a significant amount of CuO or Cu{sub 2}O phases during reoxidation. This reversible process demonstrates the unusual structural and chemical properties of the Cu-doped ceria materials.

Wang,X.; Rodriguez, J.; Hanson, J.; Gamarra, D.; Martinez-Arias, A.; Fernandez-Garcia, M.

2005-01-01T23:59:59.000Z

231

VAPORIZATION OF TUNGSTEN-METAL IN STEAM AT HIGH TEMPERATURES.  

SciTech Connect

The vaporization of tungsten from the APT spallation target dominates the radiological source term for unmitigated target overheating accidents. Chemical reactions of tungsten with steam which persist to tungsten temperatures as low as 800 C result in the formation of a hydrated tungsten-oxide which has a high vapor pressure and is readily convected in a flowing atmosphere. This low-temperature vaporization reaction essentially removes the oxide film that forms on the tungsten-metal surface as soon as it forms, leaving behind a fresh metallic surface for continued oxidation and vaporization. Experiments were conducted to measure the oxidative vaporization rates of tungsten in steam as part of the effort to quantify the MT radiological source term for severe target accidents. Tests were conducted with tungsten rods (1/8 inch diameter, six inches long) heated to temperatures from approximately 700 C to 1350 C in flowing steam which was superheated to 140 C. A total of 19 experiments was conducted. Fifteen tests were conducted by RF induction heating of single tungsten rods held vertical in a quartz glass retort. Four tests were conducted in a vertically-mounted tube furnace for the low temperature range of the test series. The aerosol which was generated and transported downstream from the tungsten rods was collected by passing the discharged steam through a condenser. This procedure insured total collection of the steam along with the aerosol from the vaporization of the rods. The results of these experiments revealed a threshold temperature for tungsten vaporization in steam. For the two tests at the lowest temperatures which were tested, approximately 700 C, the tungsten rods were observed to oxidize without vaporization. The remainder of the tests was conducted over the temperature range of 800 C to 1350 C. In these tests, the rods were found to have lost weight due to vaporization of the tungsten and the missing weight was collected in the downstream condensate system. The aerosol formed a fine white smoke of tungsten-oxide which was visible to the eye as it condensed in the laminar boundary layer of steam which flowed along the surface of the rod. The aerosol continued to flow as a smoke tube downstream of the rod, flowing coaxially along the centerline axis of the quartz glass tube and depositing by impaction along the outside of a bend and at sudden area contractions in the piping. The vaporization rate data from the 17 experiments which exceeded the vaporization threshold temperature are shown in Figure 5 in the form of vaporization rates (g/cm{sup 2} s) vs. inverse temperature (K{sup {minus}1}). Two correlations to the present data are presented and compared to a published correlation by Kilpatrick and Lott. The differences are discussed.

GREENE,G.A.; FINFROCK,C.C.

2000-10-01T23:59:59.000Z

232

Density change and viscous flow during structural relaxation of plasma-enhanced chemical-vapor-deposited silicon oxide films  

E-Print Network (OSTI)

University, Boston, Massachusetts 02215 (Received 5 May 2004; accepted 12 July 2004) The structural varying from 1 to 40 m were studied, as certain demanding applications in microelectromechanical systems investigation of the mechanical response and property changes of the PECVD SiOx films in three distinct

233

Standard test methods for chemical and mass spectrometric analysis of nuclear-grade gadolinium oxide (Gd2O3) powder  

E-Print Network (OSTI)

1.1 These test methods cover procedures for the chemical and mass spectrometric analysis of nuclear-grade gadolinium oxide powders to determine compliance with specifications. 1.2 The analytical procedures appear in the following order: Sections Carbon by Direct CombustionThermal Conductivity C1408 Test Method for Carbon (Total) in Uranium Oxide Powders and Pellets By Direct Combustion-Infrared Detection Method Total Chlorine and Fluorine by Pyrohydrolysis Ion Selective Electrode C1502 Test Method for Determination of Total Chlorine and Fluorine in Uranium Dioxide and Gadolinium Oxide Loss of Weight on Ignition 7-13 Sulfur by CombustionIodometric Titration Impurity Elements by a Spark-Source Mass Spectrographic C761 Test Methods for Chemical, Mass Spectrometric, Spectrochemical,Nuclear, and Radiochemical Analysis of Uranium Hexafluoride C1287 Test Method for Determination of Impurities In Uranium Dioxide By Inductively Coupled Plasma Mass Spectrometry Gadolinium Content in Gadolinium Oxid...

American Society for Testing and Materials. Philadelphia

2006-01-01T23:59:59.000Z

234

The Progress on Low-Cost, High-Quality, High-Temperature Superconducting Tapes Deposited by the Combustion Chemical Vapor Deposition Process  

SciTech Connect

The innovative Combustion Chemical Vapor Deposition (CCVD) process is a non-vacuum technique that is being investigated to enable next generation products in several application areas including high-temperature superconductors (HTS). In combination with the Rolling Assisted Biaxially Textured Substrate (RABiTS) technology, the CCVD process has significant promise to provide low-cost, high-quality lengths of YBCO coated conductor. Over 100 meter lengths of both Ni and Ni-W (3 at. Wt.%) substrates with a surface roughness of 12-18 nm were produced. The CCVD technology has been used to deposit both buffer layer coatings as well as YBCO superconducting layers. Buffer layer architecture of strontium titanate (SrTiO{sub 3}) and ceria (CeO{sub 2}) have been deposited by CCVD on textured nickel substrates and optimized to appropriate thicknesses and microstructures to provide templates for growing PLD YBCO with a J{sub c} of 1.1 MA/cm{sup 2} at 77 K and self-field. The CCVD buffer layers have been scaled to meter plus lengths with good epitaxial uniformity along the length. A short sample cut from one of the lengths enabled high critical current density PLD YBCO. Films of CCVD YBCO superconductors have been grown on single crystal substrates with critical current densities over 1 MA/cm{sup 2}. In addition, superconducting YBCO films with an I{sub c} of 60 A/cm-width (J{sub c} = 1.5 MA/cm{sup 2}) were grown on ORNL RABiTS (CeO{sub 2}/YSZ/Y{sub 2}O{sub 3}/Ni/Ni-3W) using CCVD process.

Shoup, S.S.; White, M.K.; Krebs, S.L.; Darnell, N.; King, A.C.; Mattox, D.S.; Campbell, I.H.; Marken, K.R.; Hong, S.; Czabaj, B.; Paranthaman, M.; Christen, H.M.; Zhai, H.-Y. Specht, E.

2008-06-24T23:59:59.000Z

235

Studies on the chemical synthesis and characterization of lead oxide nanoparticles with different organic capping agents  

SciTech Connect

Lead oxide (PbO) nanoparticles were chemically synthesized using Lead (II) acetate as precursor. The effects of organic capping agents such as Oleic acid, Ethylene Diamine Tetra Acetic acid (EDTA) and Cetryl Tri Methyl Butoxide (CTAB) on the size and morphology of the nanoparticles were studied. Characterization techniques such as X-ray diffraction (XRD), Fourier Transform-Infrared spectroscopy (FT-IR), Photoluminescence (PL) Field Emission Scanning Electron Microscopy (FE-SEM), Energy Dispersive Spectroscopy (EDS) and Transmission Electron Microscopy (TEM) were used to analyse the prepared nanoparticles for their physical, structural and optical properties. The characterization studies reveal that the synthesized PbO nanoparticles had well defined crystalline structure and sizes in the range of 25 nm to 36 nm for capping agents used and 40 nm for pure PbO nanoparticles.

Arulmozhi, K. T., E-mail: arulsheelphy@gmail.com [Physics Wing (DDE), Annamalai University, Tamil Nadu, India - 608 002 (India); Mythili, N. [Department of Physics, Annamalai University, Tamil Nadu, India - 608 002 (India)] [Department of Physics, Annamalai University, Tamil Nadu, India - 608 002 (India)

2013-12-15T23:59:59.000Z

236

Studies on transparent spinel magnesium indium oxide thin films prepared by chemical spray pyrolysis  

Science Journals Connector (OSTI)

Ternary semiconducting oxide compound magnesium indium oxide films (MgIn2O4), manifesting high transparency were prepared by metal organic chemical spray pyrolysis technique. Precursors prepared for various cationic ratios of Mg/In=0.35, 0.40, 0.45 and 0.50 were thermally sprayed onto quartz substrates, decomposed at 450C and the spinel phase evolution was studied. X-ray diffraction, Rutherford backscattering and X-ray photoelectron spectroscopy studies have been conducted to confirm the formation of single-phase MgIn2O4 films with Mg/In ratio 0.50. From optical transmission studies, the observed optical band gaps varied from 3.18 to 3.86eV (0.35

A. Moses Ezhil Raj; V. Senthilkumar; V. Swaminathan; Joachim Wollschlger; M. Suendorf; M. Neumann; M. Jayachandran; C. Sanjeeviraja

2008-01-01T23:59:59.000Z

237

Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)  

SciTech Connect

Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

2008-10-31T23:59:59.000Z

238

Characterization of metal oxide layers grown on CVD graphene  

SciTech Connect

Growth of a fully oxidized aluminum oxide layer with low surface roughness on graphene grown by chemical vapor deposition is demonstrated. This is accomplished by the deposition of a 0.2 nm thick titanium seed layer on the graphene prior to the deposition of the aluminum under ultra high vacuum conditions, which was subsequently oxidized. The stoichiometry and surface roughness of the oxide layers were measured for a range of titanium and aluminum depositions utilizing ex situ x-ray photoelectron spectrometry and atomic force microscopy. These fully oxidized films are expected to produce good dielectric layers for use in graphene based electronic devices.

Matsubayashi, Akitomo; Abel, Joseph; Prasad Sinha, Dhiraj; Lee, Ji Ung; LaBella, Vincent P. [College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203 (United States)

2013-03-15T23:59:59.000Z

239

Chemistry, phase formation, and catalytic activity of thin palladium-containing oxide films synthesized by plasma-assisted physical vapor deposition  

SciTech Connect

The chemistry, microstructure, and catalytic activity of thin films incorporating palladium were studied using scanning and transmission electron microscopies, X-ray diffraction, spectrophotometry, 4-point probe and catalytic tests. The films were synthesized using pulsed filtered cathodic arc and magnetron sputter deposition, i.e. techniques far from thermodynamic equilibrium. Catalytic particles were formed by thermally cycling thin films of the Pd-Pt-O system. The evolution and phase formation in such films as a function of temperature were discussed in terms of the stability of PdO and PtO2 in air. The catalytic efficiency was found to be strongly affected by the chemical composition, with oxidized palladium definitely playing a major role in the combustion of methane. Reactive sputter deposition of thin films in the Pd-Zr-Y-O system allowed us forming microstructures ranging from nanocrystalline zirconia to palladium nanoparticles embedded in a (Zr,Y)4Pd2O matrix. The sequence of phase formation is put in relation to simple thermodynamic considerations.

Anders, Andre

2010-11-26T23:59:59.000Z

240

Comparative electron paramagnetic resonance investigation of reduced graphene oxide and carbon nanotubes with different chemical functionalities for quantum dot attachment  

SciTech Connect

Electron paramagnetic resonance (EPR) spectroscopy has been applied to different chemically treated reduced graphene oxide (rGO) and multiwalled carbon nanotubes (CNTs). A narrow EPR signal is visible at g?=?2.0029 in both GO and CNT-Oxide from carbon-related dangling bonds. EPR signals became broader and of lower intensity after oxygen-containing functionalities were reduced and partially transformed into thiol groups to obtain thiol-functionalized reduced GO (TrGO) and thiol-functionalized CNT (CNT-SH), respectively. Additionally, EPR investigation of CdSe quantum dot-TrGO hybrid material reveals complete quenching of the TrGO EPR signal due to direct chemical attachment and electronic coupling. Our work confirms that EPR is a suitable tool to detect spin density changes in different functionalized nanocarbon materials and can contribute to improved understanding of electronic coupling effects in nanocarbon-nanoparticle hybrid nano-composites promising for various electronic and optoelectronic applications.

Pham, Chuyen V.; Krueger, Michael, E-mail: michael.krueger@fmf.uni-freiburg.de, E-mail: emre.erdem@physchem.uni-freiburg.de; Eck, Michael [Freiburg Materials Research Center (FMF), University of Freiburg, Stefan-Meier-Str. 21, 79104 Freiburg (Germany); Department of Microsystems Engineering (IMTEK), University of Freiburg, Georges-Khler-Allee 103, 79110 Freiburg (Germany); Weber, Stefan; Erdem, Emre, E-mail: michael.krueger@fmf.uni-freiburg.de, E-mail: emre.erdem@physchem.uni-freiburg.de [Institute of Physical Chemistry, University of Freiburg, Albertstr. 21, 79104 Freiburg (Germany)

2014-03-31T23:59:59.000Z

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241

Effect of hydrogen sulfide on chemical looping combustion of coal-derived synthesis gas over bentonite-supported metal-oxide oxygen carriers  

SciTech Connect

The effect of hydrogen sulfide (H{sub 2}S) on the chemical looping combustion of coal-derived synthesis gas with bentonite-supported metal oxides - such as iron oxide, nickel oxide, manganese oxide, and copper oxide - was investigated by thermogravimetric analysis, mass spectrometry, and X-ray photoelectron spectroscopy (XPS). During the reaction with synthesis gas containing H{sub 2}S, metal-oxide oxygen carriers were first reduced by carbon monoxide and hydrogen, and then interacted with H{sub 2}S to form metal sulfide, which resulted in a weight gain during the reduction/sulfidation step. The reduced/sulfurized compounds could be regenerated to form sulfur dioxide and oxides during the oxidation reaction with air. The reduction/oxidation capacities of iron oxide and nickel oxide were not affected by the presence of H{sub 2}S, but both manganese oxide and copper oxide showed decreased reduction/oxidation capacities. However, the rates of reduction and oxidation decreased in the presence of H{sub 2}S for all four metal oxides.

Tian, H.J.; Simonyi, T.; Poston, J.; Siriwardane, R. [US DOE, Morgantown, WV (United States). National Energy Technology Laboratory

2009-09-15T23:59:59.000Z

242

Chemical interactions at polymer interfaces: poly(p-xylylene-?-tetrahydrothiophene-bromide, chloride) on indiumtin-oxide  

Science Journals Connector (OSTI)

Chemical interactions, at the interface between a precursor polymer for poly(p-phenylenevinylene), namely poly(p-xylylene-?-tetrahydrothiophene-chloride), and an indiumtin-oxide transparent electrode, are identified using X-ray photoelectron spectroscopy. The \\{HCl\\} eliminated in the conversion process interacts with the surface of the indiumtin-oxide substrate leading to the formation of indium chloride which then diffuses into the polymer. It appears that indiumtin-oxide, or possibly the indium chloride generated at the interface, acts as a catalyst for the thermal elimination reaction. The results show unequivocally that interfacial interactions are of major importance in understanding, and ultimately improving, the performance of polymer-based electro-luminescent devices.

A Andersson; Th Kugler; M Lgdlund; A.B Holmes; X Li; W.R Salaneck

1999-01-01T23:59:59.000Z

243

Effect of Carbon Deposition on the Oxidation Rate of Copper/Bentonite in the Chemical Looping Process  

SciTech Connect

The presented work is part of the Industrial Carbon Management Initiative (ICMI) on the development of metal oxide oxygen carriers for use in the chemical looping combustion process. An oxygen carrier, CuO/bentonite (60:40%), was reacted with methane gas and then oxidized in air. The change in weight and reaction gas concentrations were measured using a thermogravimetric analyzer (TGA) equipped with a real-time gas analyzer. The reductionoxidation cycle was conducted within the temperature range of 750900 C for 10 cycles, using 20, 50, and100% CH{sub 4} concentrations in N{sub 2} for the reduction segment and dry air for the oxidation segment. Several analysis methods were evaluated to fit the oxidation of reduced CuO (i.e., Cu) data over the complete conversion range with suitable rate expressions derived from existing models for oxidation, including the shrinking core model (diffusion and reaction control), first- and second-order reaction rates, parallel and series reaction mechanisms, and JohnsonMehlAvrami (JMA) rate. The best agreement between the experimental data and the models of the Cu oxidation was accomplished using the JMA model. The reactivity of the oxygen carrier during the oxidation reactions was affected by the CH{sub 4} concentration as well as the temperature. The rate of fractional uptake of oxygen onto the carrier decreased as the temperature increased, contrary to expectations and indicative that the mechanism is changing during the test. Analysis of the exit gas provided evidence of carbon deposition on the reduced sorbent particle and resulted in the CO{sub 2} product upon oxidation. The oxidation of this carbon releases significant heat that is capable of changing the particle morphology (Zhu, Y.; Mimura, K.; Isshiki, M. Oxid. Met. 2004, 62, 207?222). On the basis of experimental results, the overall reaction process in the fuel reactor may be considered to consist of the decomposition of CH{sub 4} into C and H{sub 2} and reduction of CuO/bentonite by the resulting H{sub 2} and the parallel reaction of CH{sub 4} with CuO/bentonite. The extent of carbon deposition in the carrier particle increased with an increasing temperature and CH{sub 4} concentration. This deposited carbon not only leads to CO{sub 2} release from the oxidation reactor but, more importantly, causes degredation of the carrier capacity and its reactivity.

Monazam, Esmail R.; Breault, Ronald W.; Siriwardane, Ranjani

2012-11-01T23:59:59.000Z

244

Ductility and chemical reactions at the interface between nickel and magnesium oxide single crystals.  

E-Print Network (OSTI)

??An investigation was conducted on the interaction between nickel metal and single crystals of magnesium oxide. The nickel was cleaned with purified hydrogen gas at (more)

Hasselman, Didericus Petrus Hermannus

2011-01-01T23:59:59.000Z

245

Effect of hydrogen sulfide on chemical looping of coal-derived synthesis gas over bentonite-supported metal---oxide oxygen carriers  

SciTech Connect

The effect of hydrogen sulfide (H2S) on the chemical looping combustion of coal-derived synthesis gas with bentonite-supported metal oxidesssuch as iron oxide, nickel oxide, manganese oxide, and copper oxideswas investigated by thermogravimetric analysis, mass spectrometry, and X-ray photoelectron spectroscopy (XPS). During the reaction with synthesis gas containing H2S, metal-oxide oxygen carriers were first reduced by carbon monoxide and hydrogen, and then interacted with H2S to form metal sulfide, which resulted in a weight gain during the reduction/sulfidation step. The reduced/sulfurized compounds could be regenerated to form sulfur dioxide and oxides during the oxidation reaction with air. The reduction/oxidation capacities of iron oxide and nickel oxide were not affected by the presence of H2S, but both manganese oxide and copper oxide showed decreased reduction/oxidation capacities. However, the rates of reduction and oxidation decreased in the presence of H2S for all four metal oxides.

Tian, H.; Simonyi, T.; Poston, J.; Siriwardane, R.

2009-01-01T23:59:59.000Z

246

Photocatalytic and chemical oxidation of organic compounds in supercritical carbon dioxide. Progress report for FY97  

SciTech Connect

'The background for the project is briefly reviewed and the work done during the nine months since funding was received is documented. Work began in January, 1997. A post doctoral fellow joined the team in April. The major activities completed this fiscal year were: staffing the project, design of the experimental system, procurement of components, assembly of the system. preparation of the Safe Operating Procedure and ES and H compliance, pressure testing, establishing data collection and storage methodology, and catalyst preparation. Objective The objective of the project is to develop new chemistry for the removal of organic contaminants from supercritical carbon dioxide. This has application in processes used for continuous cleaning and extraction of parts and waste materials. A secondary objective is to increase the fundamental understanding of photocatalytic chemistry. Cleaning and extraction using supercritical carbon dioxide (scCO{sub 2}) can be applied to the solution of a wide range of environmental and pollution prevention problems in the DOE complex. Work is being done that explores scCO{sub 2} in applications ranging from cleaning contaminated soil to cleaning components constructed from plutonium. The rationale for use of scCO{sub 2} are based on the benign nature, availability and low cost, attractive solvent properties, and energy efficient separation of the extracted solute from the solvent by moderate temperature or pressure changes. To date, R and D has focussed on the methods and applications of the extraction steps of the process. Little has been done that addresses methods to polish the scCO{sub 2} for recycle in the cleaning or extraction operations. In many applications it will be desirable to reduce the level of contamination from that which would occur at steady state operation of a process. This proposal addresses chemistry to achieve that. This would be an alternative to removing a fraction of the contaminated scCO{sub 2} for disposal and using makeup scCO{sub 2}. A chemical polishing operation can reduce the release of CO{sub 2} from the process. It can also reduce the consumption of reagents that may be used in the process to enhance extraction and cleaning. A polishing operation will also reduce or avoid formation of an additional waste stream. Photocatalytic and other photochemical oxidation chemistry have not been investigated in scCO{sub 2}. The large base of information for these reactions in water, organic solvents, or air suggest that the chemistry will work in carbon dioxide. There are compelling reasons to believe that the properties of scCO{sub 2} should increase the performance of photocatalytic chemistry over that found in more conventional fluid phases.'

Blake, D.M.; Bryant, D.L.; Reinsch, V.

1997-09-30T23:59:59.000Z

247

Regenerable MgO promoted metal oxide oxygen carriers for chemical looping combustion  

DOE Patents (OSTI)

The disclosure provides an oxygen carrier comprised of a plurality of metal oxide particles in contact with a plurality of MgO promoter particles. The MgO promoter particles increase the reaction rate and oxygen utilization of the metal oxide when contacting with a gaseous hydrocarbon at a temperature greater than about 725.degree. C. The promoted oxide solid is generally comprised of less than about 25 wt. % MgO, and may be prepared by physical mixing, incipient wetness impregnation, or other methods known in the art. The oxygen carrier exhibits a crystalline structure of the metal oxide and a crystalline structure of MgO under XRD crystallography, and retains these crystalline structures over subsequent redox cycles. In an embodiment, the metal oxide is Fe.sub.2O.sub.3, and the gaseous hydrocarbon is comprised of methane.

Siriwardane, Ranjani V.; Miller, Duane D.

2014-08-19T23:59:59.000Z

248

New manganese catalyst for light alkane oxidation  

DOE Patents (OSTI)

Aluminophosphates containing manganese in the structural framework are employed for the oxidation of alkanes, for example the vapor phase oxidation of methane to methanol.

Durante, Vincent A. (West Chester, PA); Lyons, James E. (Wallingford, PA); Walker, Darrell W. (Visalia, CA); Marcus, Bonita K. (Radnor, PA)

1994-01-01T23:59:59.000Z

249

Low-band-gap, amorphous-silicon-based alloys by chemical vapor deposition: Annual subcontract report, 1 October 1985-31 January 1986  

SciTech Connect

This research was conducted to determine the potential of photochemical vapor deposition (photo-CVD) for producing high-quality, low-band-gap amorphous silicon germanium alloys for use in high-efficiency, multijunction, thin-film photovoltaic solar cells. A photo-CVD reactor for mercury-sensitized photolysis of silane-germane and disilane-germane mixtures was developed. Alloy thin films of undoped a-Si/sub 1-x/Ge/sub x/:H were deposited using mercury vapor mixed with SiH/sub 4/ or Si/sub 2/H/sub 6/, GeH/sub 4/, and diluent gas of Ar, He, or H/sub 2/. Materials properties were characterized by measurements of Ge content, optical transmission and reflection, and dark and photo-conductivity. Opto-electronic properties of photo-CVD a-Si/sub 1-x/Ge/sub x/:H were found to be comparable to glow discharge and sputtered materials. Moreover, p-i-n solar cells with low-band-gap i-layers were able to be fabricated by photo-CVD.

Baron, B.N.; Jackson, S.C.

1986-12-01T23:59:59.000Z

250

Gasification and Chemical-Looping Combustion of a Lignite Char in a Fluidized Bed of Iron Oxide  

Science Journals Connector (OSTI)

Gasification and Chemical-Looping Combustion of a Lignite Char in a Fluidized Bed of Iron Oxide ... Taking reactions R1 and R2 together, the fuel has been combusted but resulting CO2 has been separated from N2 in the air, while the total heat evolved is the same as for the direct combustion of the fuel in air. ... The amount of carbon in the bed at the end of each feeding period could then be determined by combusting the char in air and measuring the total amount of CO2 and CO produced. ...

T. A. Brown; J. S. Dennis; S. A. Scott; J. F. Davidson; A. N. Hayhurst

2010-05-06T23:59:59.000Z

251

Aromatic hydroxylation. 8. A radiation chemical study of the oxidation of hydroxycyclohexadienyl radicals  

SciTech Connect

Substituted hydroxycyclohexadienyl radicals have been generated by pulse radiolysis of N/sub 2/O-saturated aqueous solutions of monosubstituted benzene derivatives. Their rates of disproportionation/dimerization and of oxidation by Fe(CN)/sub 6//sup 3 -/ and by IrCl/sub 6//sup 2 -/ have been measured by optical and conductimetric methods. For the fluoro- and chlorohydroxycyclohexadienyl radicals disproportionation is shown to involve hydrogen atom abstraction rather than electron transfer. However, the Fe(CN)/sub 6//sup 3 -/ oxidation of the substituted hydroxycyclohexadienyl radicals occurs by a rate-determining electron transfer followed by a fast proton loss rather than by hydrogen atom abstraction or synchronous removal of an electron and a proton. A plot of the log of the rate constants for oxidation against Hammett sigma/sup +/ constants gives a good linear relationship with a rho value of -3.0 +/- 0.1. With the more powerful oxidant IrCl/sub 6//sup -/, the electron-transfer oxidation of all but the least reactive hydroxycyclohexadienyl radicals is diffusion controlled.

Buxton, G.V.; Langan, J.R.; Smith, J.R.L.

1986-11-06T23:59:59.000Z

252

Physicochemical Characterization of Capstone Depleted Uranium Aerosols III: Morphologic and Chemical Oxide Analyses  

SciTech Connect

The impact of depleted uranium (DU) penetrators against an armored target causes erosion and fragmentation of the penetrators, the extent of which is dependent on the thickness and material composition of the target. Vigorous oxidation of the DU particles and fragments creates an aerosol of DU oxide particles and DU particle agglomerations combined with target materials. Aerosols from the Capstone DU aerosol study, in which vehicles were perforated by DU penetrators, were evaluated for their oxidation states using X-ray diffraction (XRD) and particle morphologies using scanning electron microscopy/energy dispersive spectrometry (SEM/EDS). The oxidation state of a DU aerosol is important as it offers a clue to its solubility in lung fluids. The XRD analysis showed that the aerosols evaluated were a combination primarily of U3O8 (insoluble) and UO3 (relatively more soluble) phases, though intermediate phases resembling U4O9 and other oxides were prominent in some samples. Analysis of particle residues in the micrometer-size range by SEM/EDS provided microstructural information such as phase composition and distribution, fracture morphology, size distribution, and material homogeneity. Observations from SEM analysis show a wide variability in the shapes of the DU particles. Some of the larger particles appear to have been fractured (perhaps as a result of abrasion and comminution); others were spherical, occasionally with dendritic or lobed surface structures. Amorphous conglomerates containing metals other than uranium were also common, especially with the smallest particle sizes. A few samples seemed to contain small chunks of nearly pure uranium metal, which were verified by EDS to have a higher uranium content exceeding that expected for uranium oxides. Results of the XRD and SEM/EDS analyses were used in other studies described in this issue of The Journal of Health Physics to interpret the results of lung solubility studies and in selecting input parameters for dose assessments.

Krupka, Kenneth M.; Parkhurst, MaryAnn; Gold, Kenneth; Arey, Bruce W.; Jenson, Evan D.; Guilmette, Raymond A.

2009-03-01T23:59:59.000Z

253

Standard test methods for chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets  

E-Print Network (OSTI)

1.1 These test methods cover procedures for the chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets to determine compliance with specifications. 1.2 The analytical procedures appear in the following order: Sections Boron by Titrimetry 7 to 13 Separation of Boron for Mass Spectrometry 14 to 19 Isotopic Composition by Mass Spectrometry 20 to 23 Separation of Halides by Pyrohydrolysis 24 to 27 Fluoride by Ion-Selective Electrode 28 to 30 Chloride, Bromide, and Iodide by Amperometric Microtitrimetry 31 to 33 Trace Elements by Emission Spectroscopy 34 to 46 1.3 The values stated in SI units are to be regarded as the standard. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. (F...

American Society for Testing and Materials. Philadelphia

1994-01-01T23:59:59.000Z

254

LNG fire and vapor control system technologies  

SciTech Connect

This report provides a review of fire and vapor control practices used in the liquefied natural gas (LNG) industry. Specific objectives of this effort were to summarize the state-of-the-art of LNG fire and vapor control; define representative LNG facilities and their associated fire and vapor control systems; and develop an approach for a quantitative effectiveness evaluation of LNG fire and vapor control systems. In this report a brief summary of LNG physical properties is given. This is followed by a discussion of basic fire and vapor control design philosophy and detailed reviews of fire and vapor control practices. The operating characteristics and typical applications and application limitations of leak detectors, fire detectors, dikes, coatings, closed circuit television, communication systems, dry chemicals, water, high expansion foam, carbon dioxide and halogenated hydrocarbons are described. Summary descriptions of a representative LNG peakshaving facility and import terminal are included in this report together with typical fire and vapor control systems and their locations in these types of facilities. This state-of-the-art review identifies large differences in the application of fire and vapor control systems throughout the LNG industry.

Konzek, G.J.; Yasutake, K.M.; Franklin, A.L.

1982-06-01T23:59:59.000Z

255

ARM Water Vapor IOP  

NLE Websites -- All DOE Office Websites (Extended Search)

ARM Water Vapor IOP The SGP CART site will host the third ARM water vapor IOP on September 18-October 8, 2000. The CART site is home to a powerful array of instruments capable of...

256

Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen  

SciTech Connect

The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

Sallis, S.; Williams, D. S. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States); Butler, K. T.; Walsh, A. [Center for Sustainable Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Quackenbush, N. F. [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Junda, M.; Podraza, N. J. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Fischer, D. A.; Woicik, J. C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); White, B. E.; Piper, L. F. J., E-mail: lpiper@binghamton.edu [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

2014-06-09T23:59:59.000Z

257

Synthesis of graphene nanosheets via oxalic acid-induced chemical reduction of exfoliated graphite oxide  

SciTech Connect

Preparing high-quality graphene through reduction of graphene oxide (GO) by oxalic acid is demonstrated in this paper. Transmission electron microscopy, scanning electron microscopy, Fourier transform infrared spectrometry, X-ray diffraction and Raman spectrometry were taken to confirm the reduction of GO and the formation of graphene under these mild conditions. Thermogravimetric analysis and conductivity measurements further testify the excellent thermal stability and conductivity of the obtained graphene. A possible mechanism for the reduction process was also proposed. Furthermore, a Pt-graphene composite was fabricated on a glassy carbon electrode and excellent electrocatalytic activity towards methanol oxidation was observed. With advantages of low toxicity, simple purification process and high quality of the product, oxalic acid provides a feasible route to prepare graphene from GO under mild conditions, thus facilitating the use of graphene-based materials for large-scale applications.

Song, Peng; Zhang, Xiao-Yan; Sun, Mingxun; Cui, Xiao-Li; Lin, Yuehe

2012-02-01T23:59:59.000Z

258

Evaluation of Novel Ceria-Supported Metal Oxides As Oxygen Carriers for Chemical-Looping Combustion  

Science Journals Connector (OSTI)

The equilibrium data were computed using the HSC Chemistry 6.1 software. ... Chuang, S. Y.; Dennis, J. S.; Hayhurst, A. N.; Scott, S. A.Development and performance of Cu-based oxygen carriers for chemical-looping combustion Combust. ...

Ali Hedayati; Abdul-Majeed Azad; Magnus Rydn; Henrik Leion; Tobias Mattisson

2012-08-24T23:59:59.000Z

259

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers  

DOE Patents (OSTI)

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

1998-05-19T23:59:59.000Z

260

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers  

DOE Patents (OSTI)

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

1998-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers  

DOE Patents (OSTI)

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

Jankowski, Alan F. (Livermore, CA); Makowiecki, Daniel M. (Livermore, CA); Rambach, Glenn D. (Livermore, CA); Randich, Erik (Endinboro, PA)

1999-01-01T23:59:59.000Z

262

Environmental Chemistry at Vapor/Water Interfaces  

E-Print Network (OSTI)

Environmental Chemistry at Vapor/Water Interfaces: Insights from Vibrational Sum Frequency Generation Spectroscopy Aaron M. Jubb, Wei Hua, and Heather C. Allen Department of Chemistry, The Ohio State/0505-0107$20.00 Keywords salts, lipids, atmospheric chemistry, ion binding, oxidation Abstract The chemistry that occurs

263

Compliant alkali silicate sealing glass for solid oxide fuel cell applications: thermal cycle stability and chemical compatibility  

SciTech Connect

An alkali silicate glass (SCN-1) is currently being evaluated as a candidate sealing glass for solid oxide fuel (SOFC) applications. The glass containing ~17 mole% alkalis (K2O and Na2O) remains vitreous and compliant during SOFC operation, unlike conventional SOFC sealing glasses, which experience substantial devitrification after the sealing process. The non-crystallizing compliant sealing glass has lower glass transition and softening temperatures since the microstructure remains glassy without significant crystallite formation, and hence can relieve or reduce residual stresses and also has the potential for crack healing. Sealing approaches based on compliant glass will also need to satisfy all the mechanical, thermal, chemical, physical, and electrical requirements for SOFC applications, not only in bulk properties but also at sealing interfaces. In this first of a series of papers we will report the thermal cycle stability of the glass when sealed between two SOFC components, i.e., a NiO/YSZ anode supported YSZ bilayer and a coated ferritic stainless steel interconnect material. High temperature leak rates were monitored versus thermal cycles between 700-850oC using back pressures ranging from 0.2 psi to 1.0 psi. Isothermal stability was also evaluated in a dual environment consisting of flowing dilute H2 fuel versus ambient air. In addition, chemical compatibility at the alumina and YSZ interfaces was examined with scanning electron microscopy and energy dispersive spectroscopy. The results shed new light on the topic of SOFC glass seal development.

Chou, Y. S.; Thomsen, Edwin C.; Williams, Riley T.; Choi, Jung-Pyung; Canfield, Nathan L.; Bonnett, Jeff F.; Stevenson, Jeffry W.; Shyam, Amit; Lara-Curzio, E.

2011-03-01T23:59:59.000Z

264

Wick for metal vapor laser  

DOE Patents (OSTI)

An improved wick for a metal vapor laser is made of a refractory metal cylinder, preferably molybdenum or tungsten for a copper laser, which provides the wicking surface. Alternately, the inside surface of the ceramic laser tube can be metalized to form the wicking surface. Capillary action is enhanced by using wire screen, porous foam metal, or grooved surfaces. Graphite or carbon, in the form of chunks, strips, fibers or particles, is placed on the inside surface of the wick to reduce water, reduce metal oxides and form metal carbides.

Duncan, David B. (Livermore, CA)

1992-01-01T23:59:59.000Z

265

Production of elemental sulfur and ammonium thiosulfate by the oxidation of H2S containing water vapor and ammonia over V/Zr-PILC catalysts  

Science Journals Connector (OSTI)

The catalytic oxidation of hydrogen sulfide in the presence of water and ammonia was studied over V2O5 supported on Zr-pillared clay catalysts (V/Zr-PILCs). The synthesized catalysts were examined using a variety of characterization techniques. A catalytic performance study using V/Zr-PILC catalysts showed that H2S was successfully converted to elemental sulfur and ammonium thiosulfate (ATS) without considerable emission of sulfur dioxide. The H2S conversion over V/Zr-PILCs increased with increasing the content of vanadia up to 6wt.%. This superior catalytic performance might be related to the uniform dispersion of vanadia species on the Zr-PILC support.

Kanattukara Vijayan Bineesh; Moon-il Kim; Goo-Hwa Lee; Manickam Selvaraj; Kyu Hyun; Dae-Won Park

2012-01-01T23:59:59.000Z

266

Microwave Plasma Chemical Vapor Deposition of Carbon Coatings on LiNi1/3Co1/3Mn1/3O2 for Li-Ion Battery Composite Cathodes  

SciTech Connect

In this paper, we report results of a novel synthesis method of thin film conductive carbon coatings on LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} cathode active material powders for lithium-ion batteries. Thin layers of graphitic carbon were produced from a solid organic precursor, anthracene, by a one-step microwave plasma chemical vapor deposition (MPCVD) method. The structure and morphology of the carbon coatings were examined using SEM, TEM, and Raman spectroscopy. The composite LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} electrodes were electrochemically tested in lithium half coin cells. The composite cathodes made of the carbon-coated LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} powder showed superior electrochemical performance and increased capacity compared to standard composite LiNi{sub 1/3}Co{sub 1/3}Mn{sub 1/3}O{sub 2} electrodes.

Doeff, M.M.; Kostecki, R.; Marcinek, M.; Wilcoc, J.D.

2008-12-10T23:59:59.000Z

267

Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4B2H6H2 gas mixture without substrate heating  

Science Journals Connector (OSTI)

Abstract Characteristics of B-doped Si epitaxial growth on Si(100) by using electron-cyclotron-resonance Ar plasma enhanced chemical vapor deposition without substrate heating in a SiH4B2H6H2Ar gas mixture were investigated. B concentration in the deposited films increases with decreasing microwave power for plasma generation. At the microwave power of 125W, the B concentration increases up to 5נ1021cm?3. Deposition rate of the B-doped Si tends to be enhanced at the higher B2H6 partial pressure. Resistivity of the B-doped Si film tends to increase with decreasing the microwave power. Referring Irvin curve, in the case of 200W, the carrier concentration is estimated to be at least about 1017cm?3 at the B concentration of 1021cm?3. After heat treatment in N2 atmosphere at 200C and 300C for 2h, the resistivity drastically decreases to the value which corresponds to carrier concentration of around 1019cm?3. From Fourier transform infrared spectroscopy measurement, it is found that hydrogen incorporated in the as-deposited film desorbed by the heat treatment.

Yusuke Abe; Masao Sakuraba; Junichi Murota

2014-01-01T23:59:59.000Z

268

Vapor spill monitoring method  

DOE Patents (OSTI)

Method for continuous sampling of liquified natural gas effluent from a spill pipe, vaporizing the cold liquified natural gas, and feeding the vaporized gas into an infrared detector to measure the gas composition. The apparatus utilizes a probe having an inner channel for receiving samples of liquified natural gas and a surrounding water jacket through which warm water is flowed to flash vaporize the liquified natural gas.

Bianchini, Gregory M. (Livermore, CA); McRae, Thomas G. (Livermore, CA)

1985-01-01T23:59:59.000Z

269

ARM - Water Vapor  

NLE Websites -- All DOE Office Websites (Extended Search)

Water Vapor Outreach Home Room News Publications Traditional Knowledge Kiosks Barrow, Alaska Tropical Western Pacific Site Tours Contacts Students Study Hall About ARM Global...

270

Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH4 and N2O  

E-Print Network (OSTI)

SiO2 film. An optimal process window had been previously identified at a total pressure of 5 Torr, but also quantitative metrology for the film deposition process. © 1999 American Vacuum Society. S0734-211X the wafer. Radiative heating of the wafer was achieved through a quartz window by an array of halogen lamps

Rubloff, Gary W.

271

In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum  

E-Print Network (OSTI)

IPA is chosen as the oxygen source for the ALD in the MOCVD. Second, IPA will not react precursor pulse time. b Dependence of ALD Al2O3 growth rate on temperature. The pulse time for TMA and IPA

272

Enabling integration of vapor-deposited polymer thin films  

E-Print Network (OSTI)

Initiated Chemical Vapor Deposition (iCVD) is a versatile, one-step process for synthesizing conformal and functional polymer thin films on a variety of substrates. This thesis emphasizes the development of tools to further ...

Petruczok, Christy D. (Christy Danielle)

2014-01-01T23:59:59.000Z

273

Measurement and modeling of Ar ? H 2 ? C H 4 arc jet discharge chemical vapor deposition reactors II: Modeling of the spatial dependence of expanded plasma parameters and species number densities  

Science Journals Connector (OSTI)

Detailed methodology and results are presented for a two-dimensional ( r z ) computer model applicable to dc arc jet reactors operating on argon/hydrogen/hydrocarbon gas mixtures and used for chemical vapor deposition of micro- and nanocrystalline diamond and diamondlike carbon films. The model incorporates gas activation expansion into the low pressure reactor chamber and the chemistry of the neutral and charged species. It predicts the spatial variation of temperature flow velocities and number densities of 25 neutral and 14 charged species and the dependence of these parameters on the operating conditions of the reactor such as flows of H 2 and C H 4 and input power. Selected outcomes of the model are compared with experimental data in the accompanying paper [C. J. Rennick et al. J. Appl. Phys.102 063309 (2007)]. Two-dimensional spatial maps of the number densities of key radical and molecular species in the reactor derived from the model provide a summary of the complicated chemical processing that occurs. In the vortex region beyond the plume the key transformations are C H 4 ? C H 3 ? C 2 H 2 ? large hydrocarbons; in the plume or the transition zone to the cooler regions the chemical processing involves C 2 H x ? ( C H y and C H z ) C 3 H x ? ( C H y and C 2 H z ) ( C 2 H y and C 2 H z ) ? C 4 H x ? ( C H y and C 3 H z ) . Depending on the local gas temperature T g and the H ? H 2 ratio the equilibria of H-shifting reactions favor C CH and C 2 species (in the hot H-rich axial region of the plume) or C H 2 C 2 H and C 2 H 2 species (at the outer boundary of the transition zone). Deductions are drawn about the most abundant C-containing radical species incident on the growing diamond surface (C atoms and CH radicals) within this reactor and the importance of chemistry involving charged species is discussed. Modifications to the boundary conditions and model reactor geometry allow its application to a lower power arc jet reactor operated and extensively studied by Jeffries and co-workers at SRI International and comparisons are drawn with the reported laser induced fluorescence data from these studies.

Yu. A. Mankelevich; M. N. R. Ashfold; A. J. Orr-Ewing

2007-01-01T23:59:59.000Z

274

E-Print Network 3.0 - atomic vapor deposited Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Articles Surfactant-Catalyzed Chemical Vapor Deposition of Copper Thin Films Eui Seong Hwang... and demonstrated for deposition of copper thin films from ... Source:...

275

E-Print Network 3.0 - acoustic wave vapor Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

(6). While previous systems have demonstrated success in chemical... striking visual identification of a range of ligating vapors (including alcohols, amines, ethers... ,...

276

Microstructural and chemical evolution near anode triple phase boundary in Ni/YSZ solid oxide fuel cells  

SciTech Connect

In this study, we report the microstructural and chemical evolution of anode grain boundaries and triple phase boundary (TPB) junctions of Ni/YSZ anode supported solid oxide fuel cells. A NiO phase was found to develop along the Ni/YSZ interfaces extending to TPBs in the operated cells. The thickness of the NiO ribbon phase remains constant at ~5 nm in hydrogen for operating durations up to 540 h. When operating on synthesis gas, an increase in interphase thickness was observed from ~11 nm for 24 h of operation to ~51 nm for 550 h of operation. YSZ phases are observed to be stable in H2 over 540 h of operation. However, for the cell operated in syngas for 550 h, a 510 nm tetragonal YSZ (t-YSZ) interfacial layer was identified that originated from the Ni/YSZ interfaces. Yttrium species seem to segregate to the interfaces during operation, leading to the formation of t-YSZ in the Y-depleted regions.

Chen, Yun; Chen, Song; Hacket, Gregory; Finklea, Harry; Song, Zueyan; Gerdes, Kirk

2011-12-01T23:59:59.000Z

277

Microstructural and chemical evolution near anode triple phase boundary in Ni/YSZ solid oxide fuel cells  

SciTech Connect

In this study, we report the micro-structural and chemical evolution of anode grain boundaries and triple phase boundary (TPB) junctions of Ni/YSZ anode supported solid oxide fuel cells. A NiO phase was found to develop along the Ni/YSZ interfaces extending to TPBs in the operated cells. The thickness of the NiO ribbon phase remains constant at ~ 5 nm in hydrogen for operating durations up to 540 h. When operating on synthesis gas, an increase in interphase thickness was observed from ~ 11 nm for 24 h of operation to ~ 51 nm for 550 h of operation. YSZ phases are observed to be stable in H{sub 2} over 540 h of operation. However, for the cell operated in syngas for 550 h, a 510 nm tetragonal YSZ (t-YSZ) interfacial layer was identified that originated from the Ni/YSZ interfaces. Yttrium species seem to segregate to the interfaces during operation, leading to the formation of t-YSZ in the Y-depleted regions.

Chen, Yun; Chen, Song; Hackett, Gregory; Finklea, Harry; Song, Xueyan; Gerdes, Kirk

2011-12-12T23:59:59.000Z

278

On the bone response to oxidized titanium implants. The role of microporous structure and chemical composition of the surface oxide in enhanced osseointegration.  

E-Print Network (OSTI)

??Background: Titanium implants have been widely used clinically for various types of bone-anchored reconstructions. A thin native oxide film, naturally formed on titanium implants contacts (more)

Sul, Young-Taeg 1960-

2002-01-01T23:59:59.000Z

279

Synthesis of poly(1-aminonaphthalene) and poly(1-aminoanthracene) by chemical oxidative polymerization and characterization of the polymers  

SciTech Connect

Poly(1-aminonaphthalene) and poly(1-aminoanthracene) have been synthesized in high yields (90--96%) by chemical oxidative polymerization of 1-aminonaphthalene and 1-aminoanthracene using H{sub 2}O{sub 2} in the presence of Fe catalyst. The oxidative polymerization of 1-aminonaphthalene and 1-aminoanthracene proceeds via successive coupling that gives the polymer structure similar to polyaniline. The polymers are brown powders and soluble in dimethyl sulfoxide (DMSO), dimethylformamide (DMF), N-methyl-2-pyrrolidone (NMP), H{sub 2}SO{sub 4}, and HCOOH. The obtained poly(1-aminonaphthalene) and poly(1-aminoanthracene) show electrical conductivities of 1.7 {times} 10{sup {minus}6} and 1.6 {times} 10{sup {minus}4} S cm{sup {minus}1}, respectively, which increase to 3.8 {times} 10{sup {minus}4}-1.5 {times} 10{sup {minus}3} S cm{sup {minus}1} on doping with HCl or I{sub 2}. Light scattering measurements of the polymers in NMP shows a large degree of depolarization ({rho}{sub v} = 0.33), indicating that the polymers have a linear and stiff structure. The number-average molecular weights (M{sub n}) of poly(1-aminonaphthalene) and poly(1-aminoanthracene) obtained are determined as 4,300 and 4,500, respectively, with narrow molecular weight distribution by gel permeation chromatography (vs polystyrene). The weight-average molecular weight (M{sub b}) of poly(1-aminoanthracene) determined by the light scattering method is 7,000. {sup 1}H NMR spectra of PNA and PAA in DMSO-d{sub 6} give rise to the absorption of the NH hydrogen in the region of {delta} 5--6 ppm, and the NH hydrogen of PNA is exchangeable with the water hydrogen contained in DMSO-d{sub 6} on the NMR time scale with an activation energy of 27 kJ mol{sup {minus}1}. PNA and PAA do not show a distinct absorption peak in the visible region.

Moon, Doo Kyung; Osakada, Kohtaro; Maruyama, Tsukasa; Yamamoto, Takakazu [Tokyo Inst. of Tech., Yokohama (Japan). Research Lab. of Resources Utilization; Kubota, Kenji [Gunma Univ., Kiryu (Japan). Faculty of Technology

1993-12-06T23:59:59.000Z

280

High-temperature oxidation of an alumina-coated Ni-base alloy  

SciTech Connect

Alumina coatings were applied to Ni-20Cr (wt%) using combustion chemical vapor deposition (combustion CVD). Combustion CVD is an open air deposition technique performed in a flame. The oxidation kinetics of coated and uncoated specimens were measured by isothermal oxidation tests carried out in pure flowing air at temperatures of 800, 900, 1,000 and 1,100 C. The alumina coatings reduced the oxidation kinetics at all temperatures. The morphologies and compositions of the alumina coatings were characterized by transmission and scanning electron microscopy, energy dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy.

Hendrick, M.R.; Hampikian, J.M.; Carter, W.B.

1996-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Water quality improvement of a lagoon containing mixed chemical industrial wastewater by micro-electrolysis-contact oxidization  

Science Journals Connector (OSTI)

A lagoon in the New Binhai District, a high-speed developing area, Tianjin, China, has long been receiving the mixed chemical industrial wastewater from a chemical industrial park. This lagoon contained comple...

Ya-fei Zhou; Mao Liu; Qiong Wu

2011-05-01T23:59:59.000Z

282

Optofluidic ring resonator sensors for rapid DNT vapor detection Greg Frye-Mason,b  

E-Print Network (OSTI)

(OFRR) chemical vapor sensor as a promising platform for explosive detection with the capability and chemical sensing platform.23­27 As illustrated in Fig. 1(A), the OFRR is a thin-walled fused silica shows that the OFRR vapor sensor is a promising platform for the development of a rapid, low

Fan, Xudong "Sherman"

283

Preparation and oxidation resistance of mullite/SiC coating for carbon materials at 1150 C  

Science Journals Connector (OSTI)

To protect carbon materials from oxidation, mullite/SiC coatings were prepared on graphite by chemical vapor reaction (CVR) and slurry sintering. The XRD analyses show that the phase of the outer-layer coating is composed of SiO2 and mullite, and the inner-layer coating is mainly composed of ?-SiC. The anti-oxidation behavior of the coating and the Rockwell hardness (HRB) of the coating after oxidation were investigated. The oxidation test shows that the as-prepared multi-layer coating exhibits excellent anti-oxidation and thermal shock resistance at high temperature. After oxidation at 1150 C for 109 h and thermal shock cycling between 1150 C and room temperature for 12 times, the mass gain of the coated sample is 0.085%. Meanwhile, the indentation tests also demonstrate that the as-prepared coating has good bonding ability between the layers.

Xin YANG; Zhe-an SU; Qi-zhong HUANG; Li-yuan CHAI

2012-01-01T23:59:59.000Z

284

Method for the generation of variable density metal vapors which bypasses the liquidus phase  

DOE Patents (OSTI)

The present invention provides a method for producing a metal vapor that includes the steps of combining a metal and graphite in a vessel to form a mixture; heating the mixture to a first temperature in an argon gas atmosphere to form a metal carbide; maintaining the first temperature for a period of time; heating the metal carbide to a second temperature to form a metal vapor; withdrawing the metal vapor and the argon gas from the vessel; and separating the metal vapor from the argon gas. Metal vapors made using this method can be used to produce uniform powders of the metal oxide that have narrow size distribution and high purity.

Kunnmann, Walter (Stony Brook, NY); Larese, John Z. (Rocky Point, NY)

2001-01-01T23:59:59.000Z

285

I n s i t u thermal oxidation for surface cleaning and mask generation prior to selective area epitaxy  

Science Journals Connector (OSTI)

Dry thermal oxidation of GaAs and AlAs has been carried out in an organometallic chemical vapor deposition system. This i n s i t u process performed either before or after an epitaxialgrowth serves the purposes of surface cleaning and mask generation for selective area epitaxy of various III?V semiconductors.AlAsoxidized immediately after growth and patterned for the next regrowth provides better oxide?semiconductor interfaces and minimizes wafer handling. Pre?epitaxy oxidation at 435?C on a patterned wafer with AlAs/GaAs areas resulted in a selective oxide mask. Since thermal oxides of GaAssublime at temperatures >600?C a 700?C pregrowth annealing thus thermally cleans the oxidizedGaAs areas while the oxides of AlAs remain as a mask for the following regrowth. Photoluminescence results indicate that high quality regrown interfaces have been obtained.

Stephen H. Jones; Kei May Lau

1988-01-01T23:59:59.000Z

286

Gasoline vapor recovery  

SciTech Connect

In a gasoline distribution network wherein gasoline is drawn from a gasoline storage tank and pumped into individual vehicles and wherein the gasoline storage tank is refilled periodically from a gasoline tanker truck, a method of recovering liquid gasoline from gasoline vapor that collects in the headspace of the gasoline storage tank as the liquid gasoline is drawn therefrom, said method comprising the steps of: (a) providing a source of inert gas; (b) introducing inert gas into the gasoline storage tank as liquid gasoline is drawn therefrom so that liquid gasoline drawn from the tank is displaced by inert gas and gasoline vapor mixes with the inert gas in the headspace of the tank; (c) collecting the inert gas/gasoline vapor mixture from the headspace of the gasoline storage tank as the tank is refilled from a gasoline tanker truck; (d) cooling the inert gas/gasoline vapor mixture to a temperature sufficient to condense the gasoline vapor in the mixture to liquid gasoline but not sufficient to liquify the inert gas in the mixture; (e) separating the condensed liquid gasoline from the inert gas; and delivering the condensed liquid gasoline to a remote location for subsequent use.

Lievens, G.; Tiberi, T.P.

1993-06-22T23:59:59.000Z

287

Electrolyte vapor condenser  

DOE Patents (OSTI)

A system is disclosed for removing electrolyte from a fuel cell gas stream. The gas stream containing electrolyte vapor is supercooled utilizing conventional heat exchangers and the thus supercooled gas stream is passed over high surface area passive condensers. The condensed electrolyte is then drained from the condenser and the remainder of the gas stream passed on. The system is particularly useful for electrolytes such as phosphoric acid and molten carbonate, but can be used for other electrolyte cells and simple vapor separation as well. 3 figs.

Sederquist, R.A.; Szydlowski, D.F.; Sawyer, R.D.

1983-02-08T23:59:59.000Z

288

Electrolyte vapor condenser  

DOE Patents (OSTI)

A system is disclosed for removing electrolyte from a fuel cell gas stream. The gas stream containing electrolyte vapor is supercooled utilizing conventional heat exchangers and the thus supercooled gas stream is passed over high surface area passive condensers. The condensed electrolyte is then drained from the condenser and the remainder of the gas stream passed on. The system is particularly useful for electrolytes such as phosphoric acid and molten carbonate, but can be used for other electrolyte cells and simple vapor separation as well.

Sederquist, Richard A. (Newington, CT); Szydlowski, Donald F. (East Hartford, CT); Sawyer, Richard D. (Canton, CT)

1983-01-01T23:59:59.000Z

289

On the Theory of Oxidation-Reduction Reactions Involving Electron Transfer. V. Comparison and Properties of Electrochemical and Chemical Rate Constants  

DOE R&D Accomplishments (OSTI)

Using a theory of electron transfers which takes cognizance of reorganization of the medium outside the inner coordination shell and of changes of bond lengths inside it, relations between electrochemical and related chemical rate constants are deduced and compared with the experimental data. A correlation is found, without the use of arbitrary parameters. Effects of weak complexes with added electrolytes are included under specified conditions. The deductions offer a way of coordinating a variety of data in the two fields, internally as well as with each those in another. For example, the rate of oxidation or reduction of a series of related reactants by one reagent is correlated with that of another and with that of the corresponding electrochemical oxidation-reduction reaction, under certain specified conditions. These correlations may also provide a test for distinguishing an electron from an atom transfer mechanism. (auth)

Marcus, R. A.

1962-00-00T23:59:59.000Z

290

Organic vapor jet printing system  

SciTech Connect

An organic vapor jet printing system includes a pump for increasing the pressure of an organic flux.

Forrest, Stephen R

2012-10-23T23:59:59.000Z

291

Kinetics of Magnetite (Fe3O4) Oxidation to Hematite (Fe2O3) in Air for Chemical Looping Combustion  

Science Journals Connector (OSTI)

Rui, X.; Qilei, S.; Min, S.; Zuoji, L.; Shuai, Z.; Laihong, S.Pressurized chemical-looping combustion of coal with an iron ore-based oxygen carrier Combust. ... Industrial & Engineering Chemistry Research (2013), 52 (42), 14808-14816 CODEN: IECRED; ISSN:0888-5885. ... Application of Fe2O3-Al2O3 Composite Particles as Solid Looping Material of the Chemical-Loop Combustor ...

Esmail R. Monazam; Ronald W. Breault; Ranjani Siriwardane

2014-08-07T23:59:59.000Z

292

Mercury Vapor | Open Energy Information  

Open Energy Info (EERE)

Mercury Vapor Mercury Vapor Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Technique: Mercury Vapor Details Activities (23) Areas (23) Regions (0) NEPA(0) Exploration Technique Information Exploration Group: Lab Analysis Techniques Exploration Sub Group: Fluid Lab Analysis Parent Exploration Technique: Fluid Lab Analysis Information Provided by Technique Lithology: Stratigraphic/Structural: Anomalously high concentrations can indicate high permeability or conduit for fluid flow Hydrological: Field wide soil sampling can generate a geometrical approximation of fluid circulation Thermal: High concentration in soils can be indicative of active hydrothermal activity Dictionary.png Mercury Vapor: Mercury is discharged as a highly volatile vapor during hydrothermal

293

Reduced Sulfur in Ashes and Slags from the Gasification of Coals: Availability for Chemical and Microbial Oxidation  

Science Journals Connector (OSTI)

...9 by 30 cm) ofa coal gasifier slag (1.5 kg [air-dried...rates. Ten grams of gasifier ash was suspended in...most-probable-number (MPN) medium de- scribed below except...99. Growth in the medium was scored positive if...S OXIDATION IN COAL GASIFIER SOLID WASTES 745 6 E...

Richard F. Strayer; Edward C. Davis

1983-03-01T23:59:59.000Z

294

Journal of Molecular Catalysis A: Chemical 276 (2007) 816 Oxidative carbonylation of toluene to p-toluic acid catalyzed by  

E-Print Network (OSTI)

the water-gas-shift reaction leading to a reduction of Rh(III) to Rh(I). A mechanism for the overall 2007 Abstract The mechanism and kinetics of the liquid phase, oxidative carbonylation of toluene. The concentration of water, produced during the reoxidation of Rh(I) to Rh(III), in the reaction system must

Bell, Alexis T.

295

Reduced Sulfur in Ashes and Slags from the Gasification of Coals: Availability for Chemical and Microbial Oxidation  

Science Journals Connector (OSTI)

...the TXB-thiosulfate medium described by Brannan...replaced the sulfates. The medium con- tained the following...99. Growth in the medium was scored positive if...Ash and slag particle size distribu- tions were...S OXIDATION IN COAL GASIFIER SOLID WASTES 745 6 E...

Richard F. Strayer; Edward C. Davis

1983-03-01T23:59:59.000Z

296

Stratified vapor generator  

DOE Patents (OSTI)

A stratified vapor generator (110) comprises a first heating section (H.sub.1) and a second heating section (H.sub.2). The first and second heating sections (H.sub.1, H.sub.2) are arranged so that the inlet of the second heating section (H.sub.2) is operatively associated with the outlet of the first heating section (H.sub.1). A moisture separator (126) having a vapor outlet (164) and a liquid outlet (144) is operatively associated with the outlet (124) of the second heating section (H.sub.2). A cooling section (C.sub.1) is operatively associated with the liquid outlet (144) of the moisture separator (126) and includes an outlet that is operatively associated with the inlet of the second heating section (H.sub.2).

Bharathan, Desikan (Lakewood, CO); Hassani, Vahab (Golden, CO)

2008-05-20T23:59:59.000Z

297

Removal of hydrogen sulfide as ammonium sulfate from hydropyrolysis product vapors  

SciTech Connect

A system and method for processing biomass into hydrocarbon fuels that includes processing a biomass in a hydropyrolysis reactor resulting in hydrocarbon fuels and a process vapor stream and cooling the process vapor stream to a condensation temperature resulting in an aqueous stream. The aqueous stream is sent to a catalytic reactor where it is oxidized to obtain a product stream containing ammonia and ammonium sulfate. A resulting cooled product vapor stream includes non-condensable process vapors comprising H.sub.2, CH.sub.4, CO, CO.sub.2, ammonia and hydrogen sulfide.

Marker, Terry L; Felix, Larry G; Linck, Martin B; Roberts, Michael J

2014-10-14T23:59:59.000Z

298

Vapor Barriers or Vapor Diffusion Retarders | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Home Air Sealing for New Home Construction Insulation Types of Insulation Insulation and Air Sealing Products and Services External Resources Find a Local AirVapor Barrier...

299

A Detailed Chemical Kinetic Reaction Mechanism for Oxidation of Four Small Alkyl Esters in Laminar Premixed Flames  

SciTech Connect

A detailed chemical kinetic reaction mechanism has been developed for a group of four small alkyl ester fuels, consisting of methyl formate, methyl acetate, ethyl formate and ethyl acetate. This mechanism is validated by comparisons between computed results and recently measured intermediate species mole fractions in fuel-rich, low pressure, premixed laminar flames. The model development employs a principle of similarity of functional groups in constraining the H atom abstraction and unimolecular decomposition reactions in each of these fuels. As a result, the reaction mechanism and formalism for mechanism development are suitable for extension to larger oxygenated hydrocarbon fuels, together with an improved kinetic understanding of the structure and chemical kinetics of alkyl ester fuels that can be extended to biodiesel fuels. Variations in concentrations of intermediate species levels in these flames are traced to differences in the molecular structure of the fuel molecules.

Westbrook, C K; Pitz, W J; Westmoreland, P R; Dryer, F L; Chaos, M; Osswald, P; Kohse-Hoinghaus, K; Cool, T A; Wang, J; Yang, B; Hansen, N; Kasper, T

2008-02-08T23:59:59.000Z

300

Ethylene Oxide Gaseous Sterilization: II. Influence of Method of Humidification  

Science Journals Connector (OSTI)

...materials tend to remove water vapor from a gas mixture...that the penetration of water vapor into adsorbent...room atmosphere. The atmospheric relative humidity remained...prior to exposure to water vapor and ethylene oxide. The medium employed for recovery of viable cells after...

Robert R. Ernst; James J. Shull

1962-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Evaluation of chemical oxygen demand (COD) based on coulometric determination of electrochemical oxygen demand (EOD) using a surface oxidized copper electrode  

Science Journals Connector (OSTI)

Chemical oxygen demand (COD) was estimated by exhaustive electrolysis using a home-made cell with a copper working electrode in 0.1M NaOH. The net Faradaic charge, corresponding to the number of electrons consumed in electrolyzing (oxidizing) the organic species, was correlated to the COD evaluated by the conventional methods using dichromate or permanganate. The time taken for a single measurement was about 30min, much less than the 24h required in the conventional methods. Known components of the secondary effluents from several waste water treatment plants in Japan (l-glutamate, glycine, d-glucose, phenol, lignin, tannic acid, hemicellulose, and humic acid) were chosen as standard samples, and each showed a linear response proportional to the concentration of the analytes. For real water samples from rivers and lakes, a linear relationship was observed between this method and both of the conventional methods between about 1 and 10mgml?1 COD, the range allowed by the Environmental Quality Standard of Japan. An artificial water sample was prepared and a calibration graph resembling the results of the real samples was obtained. NMR spectra of d-glucose, l-glutamate, glycine, phenol, quinone, hydroquinone, lignin, tannic acid, hemicellulose, and humic acid were obtained before and after electrolysis, and qualitative changes are discussed. Fluorescence measurements were also performed before and after the electrolysis of the polymeric compounds used in this experiment, allowing the oxidation ratios to be estimated.

Kyong-Hoon Lee; Tomoko Ishikawa; S.J McNiven; Yoko Nomura; Atsunori Hiratsuka; Satoshi Sasaki; Yoshiko Arikawa; Isao Karube

1999-01-01T23:59:59.000Z

302

Comparison of a new micaceous iron oxide and ilmenite as oxygen carrier for Chemical looping combustion with respect to syngas conversion  

Science Journals Connector (OSTI)

Abstract Chemical looping combustion (CLC) is a promising carbon capture and storage (CCS) technology. One of the challenges is to find the most suitable oxygen carrier (OC). Using solid fuels makes it important to use cheap and natural oxygen carriers, since there will probably be some loss of bed material while discharging ash from the system. Therefore ilmenite and a new micaceous iron oxide (MIOX ME 400) are compared with respect to syngas conversion in a 10kWth bubbling fluidized bed (BFB) reactor. The OC was alternatively reduced with either CO+H2 or CH4+H2 and oxidized with air at 900C. The conversion of syngas with MIOX ME 400 is always higher (XCO, XH2>98%) than that with ilmenite. Conversion of CH4 is also better for MIOX ME 400, even though it is still low. It can be raised by increasing fuel reactor temperature from 900C to 950C which results in a CH4 conversion of 8560% instead of 6040%.

Florian Mayer; Ajay R. Bidwe; Alexander Schopf; Kamran Taheri; Mariusz Zieba; Gnter Scheffknecht

2014-01-01T23:59:59.000Z

303

Vapor spill pipe monitor  

DOE Patents (OSTI)

The invention is a method and apparatus for continually monitoring the composition of liquefied natural gas flowing from a spill pipe during a spill test by continually removing a sample of the LNG by means of a probe, gasifying the LNG in the probe, and sending the vaporized LNG to a remote ir gas detector for analysis. The probe comprises three spaced concentric tubes surrounded by a water jacket which communicates with a flow channel defined between the inner and middle, and middle and outer tubes. The inner tube is connected to a pump for providing suction, and the probe is positioned in the LNG flow below the spill pipe with the tip oriented partly downward so that LNG is continuously drawn into the inner tube through a small orifice. The probe is made of a high thermal conductivity metal. Hot water is flowed through the water jacket and through the flow channel between the three tubes to provide the necessary heat transfer to flash vaporize the LNG passing through the inner channel of the probe. The gasified LNG is transported through a connected hose or tubing extending from the probe to a remote ir sensor which measures the gas composition.

Bianchini, G.M.; McRae, T.G.

1983-06-23T23:59:59.000Z

304

Diphenylarsinic acid, a chemical warfare-related neurotoxicant, promotes liver carcinogenesis via activation of aryl hydrocarbon receptor signaling and consequent induction of oxidative DAN damage in rats  

SciTech Connect

Diphenylarsinic acid (DPAA), a chemical warfare-related neurotoxic organic arsenical, is present in the groundwater and soil in some regions of Japan due to illegal dumping after World War II. Inorganic arsenic is carcinogenic in humans and its organic arsenic metabolites are carcinogenic in animal studies, raising serious concerns about the carcinogenicity of DPAA. However, the carcinogenic potential of DPAA has not yet been evaluated. In the present study we found that DPAA significantly enhanced the development of diethylnitrosamine-induced preneoplastic lesions in the liver in a medium-term rat liver carcinogenesis assay. Evaluation of the expression of cytochrome P450 (CYP) enzymes in the liver revealed that DPAA induced the expression of CYP1B1, but not any other CYP1, CYP2, or CYP3 enzymes, suggesting that CYP1B1 might be the enzyme responsible for the metabolic activation of DPAA. We also found increased oxidative DNA damage, possibly due to elevated CYP1B1 expression. Induction of CYP1B1 has generally been linked with the activation of AhR, and we found that DPAA activates the aryl hydrocarbon receptor (AhR). Importantly, the promotion effect of DPAA was observed only at a dose that activated the AhR, suggesting that activation of AhR and consequent induction of AhR target genes and oxidative DNA damage plays a vital role in the promotion effects of DPAA. The present study provides, for the first time, evidence regarding the carcinogenicity of DPAA and indicates the necessity of comprehensive evaluation of its carcinogenic potential using long-term carcinogenicity studies. - Highlights: DPAA, an environmental neurotoxicant, promotes liver carcinogenesis in rats. DPAA is an activator of AhR signaling pathway. DPAA promoted oxidative DNA damage in rat livers. AhR target gene CYP 1B1 might be involved in the metabolism of DPAA.

Wei, Min; Yamada, Takanori; Yamano, Shotaro; Kato, Minoru; Kakehashi, Anna; Fujioka, Masaki; Tago, Yoshiyuki; Kitano, Mistuaki; Wanibuchi, Hideki, E-mail: wani@med.osaka-cu.ac.jp

2013-11-15T23:59:59.000Z

305

Chemical spray pyrolysis deposition and characterization of p-type CuCr1?xMgxO2 transparent oxide semiconductor thin films  

Science Journals Connector (OSTI)

A chemical spray pyrolysis technique for deposition of p-type Mg-doped CuCrO2 transparent oxide semiconductor thin films using metaloorganic precursors is described. As-deposited films contain mixed spinel CuCr2O4 and delafossite CuCrO2 structural phases. Reduction in spinel CuCr2O4 fraction and formation of highly crystalline films with single phase delafossite CuCrO2 structure is realized by annealing at temperatures ?700C in argon. A mechanism of synthesis of CuCrO2 films involving precursor decomposition, oxidation and reaction between constituent oxides in the spray deposition process is presented. Post-annealed CuCr0.93Mg0.07O2 thin films show high (?80%) visible transmittance and sharp absorption at band gap energy with direct and indirect optical band gaps 3.11 and 2.58eV, respectively. Lower (?450C) substrate temperature formed films are amorphous and yield lower direct (2.96eV) and indirect (2.23eV) band gaps after crystallization. Electrical conductivity of CuCr0.93 Mg0.07O2 thin films ranged 0.61Scm?1 and hole concentration ?21019cm?3 determined from Seebeck analysis. Temperature dependence of conductivity exhibit activation energies ?0.11eV in 300470K and ?0.23eV in ?470K region ascribed to activated conduction and grain boundary trap assisted conduction, respectively. Heterojunction diodes of the structure Au/n-(ZnO)/p-(CuCr0.93Mg0.07O2)/SnO2 (TCO) were fabricated which show potential for transparent wide band gap junction device.

S.H. Lim; Suma Desu; A.C. Rastogi

2008-01-01T23:59:59.000Z

306

Chemical Treatment Fosters Zero Discharge by Making Cooling Water Reusable  

E-Print Network (OSTI)

mechanical methods in this category are lime-soda side stream softening and vapor compression blowdown evaporation. Another approach is chemical treatment to promote scale inhibition and dispersion....

Boffardi, B. P.

307

High-resolution terahertz atmospheric water vapor continuum measurements  

E-Print Network (OSTI)

High-resolution terahertz atmospheric water vapor continuum measurements David M. Slocum,* Thomas M such as pollution monitoring and the detection of energetic chemicals using remote sensing over long path lengths through the atmosphere. Although there has been much attention to atmospheric effects over narrow

Massachusetts at Lowell, University of

308

Vapor-liquid critical and interfacial properties of square-well fluids in slit pores  

E-Print Network (OSTI)

Jayant K. Singh,1,a and Sang Kyu Kwak2 1 Department of Chemical Engineering, Indian Institute and the shift of the vapor-liquid critical point. Nevertheless, in recent years, with the discovery of well

Singh, Jayant K.

309

Response of passive organic vapor dosimeters to a mixed gas exposure  

E-Print Network (OSTI)

of Advisory Comm1ttee: Dr. Richard B. Konzen The effects of the sampling order of two chemicals adsorbed onto a DuPont Pro-Tek Organic Vapor Dosimeters were investigated. The dosimeters were exposed to varying known concentrations of methyl methacrylate...-powered pump to draw a known volume of air through a charcoal packed tube. The charcoal adsorbs the organic vapors and separates the small amount of vapor from a large amount of air. The organic vapors are then desorbed and analyzed by means of gas...

Anderson, Scott Merritt

2012-06-07T23:59:59.000Z

310

Hydrogen Cars and Water Vapor  

E-Print Network (OSTI)

. This cycle is currently under way with hydrogen fuel cells. As fuel cell cars are suggested as a solutionHydrogen Cars and Water Vapor D.W.KEITHANDA.E.FARRELL'S POLICY FORUM "Rethinking hydrogen cars" (18 misidentified as "zero-emissions vehicles." Fuel cell vehicles emit water vapor. A global fleet could have

Colorado at Boulder, University of

311

Fuel vapor control device  

SciTech Connect

A fuel vapor control device is described having a valve opening and closing a passage connecting a carburetor and a charcoal canister according to a predetermined temperature. A first coil spring formed by a ''shape memory effect'' alloy is provided to urge the valve to open the passage when the temperature is high. A second coil spring urges the valve to close the passage. A solenoid is provided to urge an armature against the valve to close the passage against the force of the first coil spring when the engine is running. The solenoid heats the first coil spring to generate a spring force therein when the engine is running. When the engine is turned off, the solenoid is deactivated, and the force of the first spring overcomes the force of the second spring to open the passage until such time as the temperature of the first spring drops below the predetermined temperature.

Ota, I.; Nishimura, Y.; Nishio, S.; Yogo, K.

1987-10-20T23:59:59.000Z

312

The Dust Settles on Water Vapor Feedback  

Science Journals Connector (OSTI)

...To understand water vapor feedback...shifts in the atmospheric circulation...caused a positive water vapor feedback...temperature. Condensation, evaporation...shifts in the atmospheric circulation...caused a positive water vapor feedback...temperature. Condensation, evaporation...

Anthony D. Del Genio

2002-04-26T23:59:59.000Z

313

Final purification of synthetic olive oil mill wastewater treated by chemical oxidation using ion exchange: Study of operating parameters  

Science Journals Connector (OSTI)

Abstract In this research work, ion exchange (IE) is presented as a suitable option for purification of olive oil mill wastewater (OMW) previously treated by means of a secondary treatment (OMWST). This pretreatment consisted in Fenton-like oxidation process, followed by coagulationflocculation and filtration through olive stones. The parametric requirements for drinking water production or at least for public waterways discharge were achieved using a combination of two IE columns working in series at bench scale. The IE resins used in this study were Dowex Marathon C and Amberlite IRA-67. The effect of contact time, operating temperature and flow rate on simultaneous removal of sodium, total iron, chloride and phenols (the major pollutant species in OMWST) were investigated. Removal percentages of sodium, chloride and total iron increased with incrementing the contact time. Equilibrium was obtained in about 30min for all ions and ion concentrations values determined were lower than the maximum levels for drinking water standards. On the other hand, adsorption efficiencies of sodium, total iron and chloride ions were found to be not considerably affected by the operating temperature. The highest phenols removal percentage (around 100%) was obtained in the first minutes for 298K and 10L/h.

M.D. Vctor-Ortega; J.M. Ochando-Pulido; G. Hodaifa; A. Martinez-Ferez

2014-01-01T23:59:59.000Z

314

Desorption efficiencies of toluene and n-butanol in an organic vapor monitor  

E-Print Network (OSTI)

&jards has become one of the most important industrial hygiene f unct i one e The levei of exposure to many organic vapor;=, is det r- mined by co' lecting the chemical on some type o solid sor- bent. Of the various adsorbents available {silica gel... two of these paramet rs) ~ The objective of this re, . earch wa, . to investigate the effe ts of chemical phase (liquid or vapor) on the desorp- tion efficiencies of toluene and n-buta?ol adsorbed on acti- vated charcoal in organic vapor monitors...

Heaney, Mary Ann

2012-06-07T23:59:59.000Z

315

Category:Mercury Vapor | Open Energy Information  

Open Energy Info (EERE)

search GEOTHERMAL ENERGYGeothermal Home Geothermalpower.jpg Looking for the Mercury Vapor page? For detailed information on Mercury Vapor as exploration techniques,...

316

Growth of manganese filled carbon nanofibers in the vapor phase  

Science Journals Connector (OSTI)

We report the vapor phase growth of partially filled graphitic fibers, 20-30 nm in diameter and up to a micron in length, during a manganese catalyzed carbon electric arc discharge. The fiber morphology resembles that of catalytic chemical vapor deposited carbon filaments but the inside hollow contains intermittent precipitates and continuous filling of Mn that at times occupy >50% of fiber lengths. Transmission electron microscopy and electron energy loss line spectra show that the fillings form as solid cores and may correspond to pure metal.

P. M. Ajayan; C. Colliex; J. M. Lambert; P. Bernier; L. Barbedette; M. Tence; O. Stephan

1994-03-14T23:59:59.000Z

317

Magnesium indium oxide (MgIn2O4) spinel thin films: Chemical spray pyrolysis (CSP) growth and materials characterizations  

Science Journals Connector (OSTI)

MgIn2O4, which has an inverse spinel structure, has been adopted as the transparent material in optoelectronic device fabrication due to its high optical transparency and electrical conductivity. Such a technologically important material was prepared by the spray pyrolysis technique. Precursors prepared for the cationic ratio Mg/In=0.5 were thermally sprayed onto glass substrates at 400 and 450?C. We report herein the preparation and characterization of the films by X-ray diffraction (XRD), energy-dispersive absorption X-ray spectroscopy (EDAX), and atomic force microscopy (AFM). The XRD results showed the single phase formation of the material that revealed the presence of Mg2+ and In3+ in the inverse spinel-related structure. The FTIR and EDAX results further confirmed that the nanocrystalline films were mainly composed of magnesium, indium, and oxygen, in agreement with XRD analysis. We surmised from the AFM micrographs that the atoms have enough diffusion activation energy to occupy the correct site in the crystal lattice. For the 423-nm-thick magnesium indium oxide films grown at 400?C, the electrical conductivity was 5.63 10 ?6 S cm ?1 and the average optical transmittance was 63% in the visible range (400700 nm). Similar MgIn2O4 films deposited at 450?C have a conductivity value of 1.5 10 ?5 S cm ?1 and an average transmittance of 75%. Hall coefficient observations showed n-type electrical conductivity and high electron carrier concentration of 2.7 10 19 cm ?3 .

A. Moses Ezhil Raj; G. Selvan; C. Ravidhas; M. Jayachandran; C. Sanjeeviraja

2008-01-01T23:59:59.000Z

318

Comprehensive chemical kinetic modeling of the oxidation of C8 and larger n-alkanes and 2-methylalkanes  

SciTech Connect

Conventional petroleum jet and diesel fuels, as well as alternative Fischer-Tropsch (FT) fuels and hydrotreated renewable jet (HRJ) fuels, contain high molecular weight lightly branched alkanes (i.e., methylalkanes) and straight chain alkanes (n-alkanes). Improving the combustion of these fuels in practical applications requires a fundamental understanding of large hydrocarbon combustion chemistry. This research project presents a detailed and reduced chemical kinetic mechanism for singly methylated iso-alkanes (i.e., 2-methylalkanes) ranging from C{sub 8} to C{sub 20}. The mechanism also includes an updated version of our previously published C{sub 8} to C{sub 16} n-alkanes model. The complete detailed mechanism contains approximately 7,200 species 31,400 reactions. The proposed model is validated against new experimental data from a variety of fundamental combustion devices including premixed and nonpremixed flames, perfectly stirred reactors and shock tubes. This new model is used to show how the presence of a methyl branch affects important combustion properties such as laminar flame propagation, ignition, and species formation.

Sarathy, S M; Westbrook, C K; Pitz, W J; Mehl, M; Togbe, C; Dagaut, P; Wang, H; Oehlschlaeger, M; NIemann, U; Seshadri, K; Veloo, P S; Ji, C; Egolfopoulos, F; Lu, T

2011-03-16T23:59:59.000Z

319

Structures of nanowires with Zn-ZnO:CuO junctions for detecting ethanol vapors  

Science Journals Connector (OSTI)

The synthesis of ZnO-ZnO:CuO structures in the form of overlapping layers of nanowires of pure and copper oxide-doped zinc oxide is described. These structures are tested as ethanol vapor sensors. The following t...

T. V. Peshkova; D. Ts. Dimitrov; S. S. Nalimova; I. E. Kononova

2014-05-01T23:59:59.000Z

320

EQ6 Calculation for Chemical Degradation of Shippingport LWBR (TH/U Oxide) Spent Nuclear Fuel Waste Packages  

SciTech Connect

The Monitored Geologic Repository (MGR) Waste Package Department of the Civilian Radioactive Waste Management System Management & Operating contractor (CRWMS M&O) performed calculations to provide input for disposal of spent nuclear fuel (SNF) from the Shippingport Light Water Breeder Reactor (LWBR) (Ref. 1). The Shippingport LWBR SNF has been considered for disposal at the potential Yucca Mountain site. Because of the high content of fissile material in the SNF, the waste package (WP) design requires special consideration of the amount and placement of neutron absorbers and the possible loss of absorbers and SNF materials over geologic time. For some WPs, the outer shell corrosion-resistant material (CRM) and the corrosion-allowance inner shell may breach (Refs. 2 and 3), allowing the influx of water. Water in the WP will moderate neutrons, increasing the likelihood of a criticality event within the WP; and the water may, in time, gradually leach the fissile components and neutron absorbers from the WP, further affecting the neutronics of the system. This study presents calculations of the long-term geochemical behavior of WPs containing a Shippingport LWBR SNF seed assembly, and high-level waste (HLW) glass canisters arranged according to the codisposal concept (Ref. 4). The specific study objectives were to determine: (1) The extent to which criticality control material, suggested for this WP design, will remain in the WP after corrosion/dissolution of the initial WP configuration (such that it can be effective in preventing criticality); (2) The extent to which fissile uranium and fertile thorium will be carried out of the degraded WP by infiltrating water (such that internal criticality is no longer possible, but the possibility of external criticality may be enhanced); and (3) The nominal chemical composition for the criticality evaluations of the WP design, and to suggest the range of parametric variations for additional evaluations. The scope of this calculation, the chemical compositions (and subsequent criticality evaluations), of the simulations are limited to time periods up to 3.17 x 10{sup 5} years. This longer time frame is closer to the one million year time horizon recently recommended by the National Academy of Sciences to the Environmental Protection Agency for performance assessment related to a nuclear repository (Ref. 5). However, it is important to note that after 100,000 years, most of the materials of interest (fissile and absorber materials) will have either been removed from the WP, reached a steady state, or been transmuted. The calculation included elements with high neutron-absorption cross sections, notably gadolinium (Gd), as well as the fissile materials. The results of this analysis will be used to ensure that the type and amount of criticality control material used in the WP design will prevent criticality.

S. Arthur

2000-09-14T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

An ethanol vapor detection probe based on a ZnO nanorod coated optical fiber long period grating  

Science Journals Connector (OSTI)

A new ethanol vapor detection probe based on an optical fiber long period grating overlaid with a zinc oxide (ZnO) nanorods layer is presented. The ZnO nanorod layer was developed onto...

Konstantaki, Maria; Klini, Argyro; Anglos, Demetrios; Pissadakis, Stavros

2012-01-01T23:59:59.000Z

322

Vapor deposition of hardened niobium  

DOE Patents (OSTI)

A method of coating ceramic nuclear fuel particles containing a major amount of an actinide ceramic in which the particles are placed in a fluidized bed maintained at ca. 800.degree. to ca. 900.degree. C., and niobium pentachloride vapor and carbon tetrachloride vapor are led into the bed, whereby niobium metal is deposited on the particles and carbon is deposited interstitially within the niobium. Coating apparatus used in the method is also disclosed.

Blocher, Jr., John M. (Columbus, OH); Veigel, Neil D. (Columbus, OH); Landrigan, Richard B. (Columbus, OH)

1983-04-19T23:59:59.000Z

323

Chemically graftedChemically grafted nanoparticlesnanoparticles Quantum dot Nanoparticle  

E-Print Network (OSTI)

Chemically graftedChemically grafted nanoparticlesnanoparticles Quantum dot Nanoparticle (~ 5nm Pb atomic force microscope tip: tether nanoparticle to oxide dot, or H-terminated pit after HF etch Ebeam

Plotkin, Steven S.

324

Structural, chemical, and electrochemical characteristics of LaSr2Fe2CrO9--based solid oxide fuel cell anodes  

E-Print Network (OSTI)

Available online 5 March 2012 Keywords: Solid oxide fuel cell Perovskite Oxide anode Redox Sulfur tolerance Solid oxide fuel cells with LaSr2Fe2CrO9-­Gd0.1Ce0.9O2- composite anodes were tested in H2, H2S-of-the-art solid oxide fuel cell (SOFC) anode is Ni-8-mole% yttria stabilized zirconia (YSZ), which performs very

Poeppelmeier, Kenneth R.

325

Vibrational spectra of CO adsorbed on oxide thin films: A tool to probe the surface defects and phase changes of oxide thin films  

SciTech Connect

Thin films of iron oxide were grown on Pt(111) single crystals using cycles of physical vapor deposition of iron followed by oxidative annealing in an ultrahigh vacuum apparatus. Two procedures were utilized for film growth of ?1530 ML thick films, where both procedures involved sequential deposition+oxidation cycles. In procedure 1, the iron oxide film was fully grown via sequential deposition+oxidation cycles, and then the fully grown film was exposed to a CO flux equivalent to 8 10{sup ?7} millibars, and a vibrational spectrum of adsorbed CO was obtained using infrared reflection-absorption spectroscopy. The vibrational spectra of adsorbed CO from multiple preparations using procedure 1 show changes in the film termination structure and/or chemical nature of the surface defectssome of which are correlated with another phase that forms (phase B), even before enough of phase B has formed to be easily detected using low energy electron diffraction (LEED). During procedure 2, CO vibrational spectra were obtained between deposition+oxidation cycles, and these spectra show that the film termination structure and/or chemical nature of the surface defects changed as a function of sequential deposition+oxidation cycles. The authors conclude that measurement of vibrational spectra of adsorbed CO on oxide thin films provides a sensitive tool to probe chemical changes of defects on the surface and can thus complement LEED techniques by probing changes not visible by LEED. Increased use of vibrational spectra of adsorbed CO on thin films would enable better comparisons between films grown with different procedures and by different groups.

Savara, Aditya, E-mail: savaraa@ornl.gov [Chemical Sciences Division, Oak Ridge National Lab, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831 (United States)

2014-03-15T23:59:59.000Z

326

Molecular Simulation of Henry's Constant at Vapor-Liquid and Liquid-Liquid Phase Richard J. Sadus  

E-Print Network (OSTI)

coexistence. 1. Introduction Henry's constant is a well-known measure of a solute's solubility in a particularMolecular Simulation of Henry's Constant at Vapor-Liquid and Liquid-Liquid Phase Boundaries Richard to determine Henry's constant from the residual chemical potential at infinite dilution at the vapor-liquid

327

Laboratory Evaluation of In Situ Chemical Oxidation for Groundwater Remediation, Test Area North, Operable Unit 1-07B, Idaho National Engineering and Environmental Laboratory, Volume Three - Appendix F  

SciTech Connect

This appendix supports the results and discussion of the laboratory work performed to evaluate the feasibility of in situ chemical oxidation for Idaho National Environmental and Engineering Laboratory's (INEEL) Test Area North (TAN) which is contained in ORNL/TM-13711/V1. This volume contains Appendix F. Appendix F is essentially a photocopy of the ORNL researchers' laboratory notebooks from the Environmental Sciences Division (ESD) and the Radioactive Materials Analytical Laboratory (RMAL).

Cline, S.R.; Denton, D.L.; Giaquinto, J.M.; McCracken, M.K.; Starr, R.C.

1999-04-01T23:59:59.000Z

328

The Vaporization Enthalpies and Vapor Pressures of Some Primary Amines of Pharmaceutical Importance by Correlation Gas  

E-Print Network (OSTI)

by Correlation Gas Chromatography Chase Gobble, Nigam Rath, and James Chickos* Department of Chemistry Information ABSTRACT: Vapor pressures, vaporization, and sublimation enthalpies of several pharmaceuticals and boiling temperatures when available. Sublimation enthalpies and vapor pressures are also evaluated for 1

Chickos, James S.

329

Investigation of hexadecanethiol self-assembled monolayers on cadmium tin oxide thin films  

Science Journals Connector (OSTI)

This study reports the use of variable angle reflectance Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy to investigate the formation of a 1-hexadecanethiol adlayer on cadmium tin oxide (CTO) thin film surfaces. These adlayers appear to be robust, ordered monolayers. The optical and electronic properties of CTO thin films chemically vapor deposited onto glass substrates were also investigated. The reflectance of the CTO films was dependent upon the incident angle of the impinging radiation and revealed a reflectance decrease indicative of a plasma frequency in the mid-IR using p-polarized radiation.

Crissy L. Rhodes; Scott H. Brewer; Jaap Folmer; Stefan Franzen

2008-01-01T23:59:59.000Z

330

The catalytic oxidation of propylene: investigation of catalyst activity.  

E-Print Network (OSTI)

- thur oxidation resulted in the formation oi' dioxymsthylperoxides acetalde- hydes formic aoids carbon monoxide, carbon dioxide~ hydrogen and water, &t temperatures above 500 degrees Centigrade the polymer1sation of eth- ylene became significant... that water vapor exerted a catalytio effeot on the oxidation of ethylene, while carbon dioxide showed no aooelerating effeot. Davis (ll) observed that water vapor possessed a oatalytio ei'- feet on ths oxidation of olefins. Thompson and Hinshslwood (SS...

Woodham, John Frank

1953-01-01T23:59:59.000Z

331

In-Situ TEM Visualization Of Vacancy Injection And Chemical Partition...  

NLE Websites -- All DOE Office Websites (Extended Search)

Abstract: Oxidation of alloy often involves chemical partition and injection of vacancies. Chemical partition is the consequence of selective oxidation, while injection of...

332

High-efficiency solar cells fabricated from direct-current magnetron sputtered n-indium tin oxide onto p-InP grown by atmospheric pressure metalorganic vapor phase epitaxy  

SciTech Connect

Solar cells based on dc magnetron sputtered indium tin oxide onto epitaxially grown films of p-InP have been fabricated and analyzed. The best cells had a global efficiency of 18.4% and an air mass zero (AMO) efficiency of 16.0%. The principal fabrication variable considered was the constituency of the sputtering gas and both argon/hydrogen and argon/oxygen mixtures have been used. The former cells have the higher efficiencies, are apparently stable, and exhibit almost ideal junction characteristics. The latter cells are relatively unstable and exhibit much higher ideality factors and reverse saturation current densities. The temperature dependence of the reverse saturation current indicates totally different charge transfer mechanisms in the two cases.

Li, X.; Wanlass, M.W.; Gessert, T.A.; Emery, K.A.; Coutts, T.J.

1989-05-01T23:59:59.000Z

333

Nitric-phosphoric acid oxidation of organic waste materials  

SciTech Connect

A wet chemical oxidation technology has been developed to address issues facing defense-related facilities, private industry, and small-volume generators such as university and medical laboratories. Initially tested to destroy and decontaminate a heterogenous mixture of radioactive-contaminated solid waste, the technology can also remediate other hazardous waste forms. The process, unique to Savannah River, offers a valuable alternative to incineration and other high-temperature or high-pressure oxidation processes. The process uses nitric acid in phosphoric acid; phosphoric acid allows nitric acid to be retained in solution well above its normal boiling point. The reaction converts organics to carbon dioxide and water, and generates NO{sub x} vapors which can be recycled using air and water. Oxidation is complete in one to three hours. In previous studies, many organic compounds were completely oxidized, within experimental error, at atmospheric pressure below 180{degrees}C; more stable compounds were decomposed at 200{degrees}C and 170 kPa. Recent studies have evaluated processing parameters and potential throughputs for three primary compounds: EDTA, polyethylene, and cellulose. The study of polyvinylchloride oxidation is incomplete at this time.

Pierce, R.A.; Smith, J.R.

1995-11-01T23:59:59.000Z

334

VAPORIZATION THERMODYNAMICS OF KCl. COMBINING VAPOR PRESSURE AND GRAVIMETRIC DATA  

E-Print Network (OSTI)

.B. Department of Chemistry, Moscow State University, Moscow, 119899, Russia Bonnell D.W., Hastie J.W. National temperature chemistry situations, vapor pressures are typically less than 100 kPa. The molar volume is p = 101325 Pa). The subscript trs denotes that the changeisfor a transition, typically sublimation

Rudnyi, Evgenii B.

335

Corrosion resistance of artificial passivation films of Fe[sub 2]O[sub 3]-Cr[sub 2]O[sub 3]-NiO formed by metalorganic chemical vapor deposition  

SciTech Connect

A series of thin Fe[sub 2]O[sub 3]-Cr[sub 2]O[sub 3]-NiO films were formed on Pt by an MOCVD technique using Fe(III), Cr(III), and Ni(II) acetylacetonate. The corrosion resistance of the films was examined in H[sub 2]SO[sub 4] and HCl by measuring the film thickness using ellipsometry and the chemical analysis of test solutions with ICPS. The dissolution rate of Fe[sub 2]O[sub 3]-Cr[sub 2]O[sub 3] composite films decreases exponentially with an increase in the cationic mass fraction of Cr[sup 3+] ions, X[sub Cr], of the films, and at the values of X[sub Cr] larger than 0.7 it becomes two orders of magnitude lower than that of Fe[sub 2]O[sub 3] films. The same type of changes in the dissolution rate with X[sub Cr] was observed for the NiO-Cr[sub 2]O[sub 3] composite films. Therefore, the addition of Cr[sub 2]O[sub 3] to Fe[sub 2]O[sub 3] and NiO films effectively improves the corrosion resistance. The addition of NiO to Fe[sub 2]O[sub 3]-Cr[sub 2]O[sub 3] composite films containing an adequate amount of Cr[sub 2]O[sub 3] does not bring an effective improvement in corrosion resistance. Therefore, the corrosion resistance of Fe[sub 2]O[sub 3]-Cr[sub 2]O[sub 3]-NiO composite films is determined primarily by the Cr[sub 2]O[sub 3] content of the films.

Sugimoto, Katsuhisa; Seto, Masahiro; Tanaka, Shigeaki; Hara, Nobuyoshi (Tohoku Univ., Sendai (Japan). Dept. of Metallurgy)

1993-06-01T23:59:59.000Z

336

Vacuum vapor deposition gun assembly  

DOE Patents (OSTI)

A vapor deposition gun assembly includes a hollow body having a cylindrical outer surface and an end plate for holding an adjustable heat sink, a hot hollow cathode gun, two magnets for steering the plasma from the gun into a crucible on the heat sink, and a shutter for selectively covering and uncovering the crucible.

Zeren, Joseph D. (Boulder, CO)

1985-01-01T23:59:59.000Z

337

LNG Vaporizer Utilizing Vacuum Steam Condensing  

Science Journals Connector (OSTI)

This report concerns the field test results of a new type of peak-shaving LNG vaporizer (VSV) whose heat source is ... heat of vacuum steam to vaporize and superheat LNG within heat transfer tubes. Prior to the.....

Y. Miyata; M. Hanamure; H. Kujirai; Y. Sato

1991-01-01T23:59:59.000Z

338

Running-Film Vaporizer for LNG  

Science Journals Connector (OSTI)

Advances in welding technology and steel fabrication techniques have permitted the development of a new concept in cryogenic vaporizersthe running-film plate vaporizer. Although similar in heat transfer philosop...

H. H. West; G. L. Puckett

1975-01-01T23:59:59.000Z

339

Vapor Retarder Classification- Building America Top Innovation  

Energy.gov (U.S. Department of Energy (DOE))

This Building America Innovations profile describes research in vapor retarders. Since 2006 the IRC has permitted Class III vapor retarders like latex paint (see list above) in all climate zones under certain conditions thanks to research by Building America teams.

340

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy  

E-Print Network (OSTI)

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byrate enhancement is due to a photo-chemical process. Thenanocrystals can be rapidly photo-oxidized. This oxidation

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Vapor Pressures and Heats of Vaporization of Primary Coal Tars  

Office of Scientific and Technical Information (OSTI)

/ PC92544-18 / PC92544-18 VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS FINAL REPORT Grant Dates: August, 1992 - November, 1996 Principal Authors: Eric M. Suuberg (PI) and Vahur Oja Report Submitted: April, 1997 Revised: July, 1997 Grant Number: DE-FG22-92PC92544 Report Submitted by: ERIC M. SUUBERG DIVISION OF ENGINEERING BROWN UNIVERSITY PROVIDENCE, RI 02912 TEL. (401) 863-1420 Prepared For: U. S. DEPT. OF ENERGY FEDERAL ENERGY TECHNOLOGY CENTER P.O. BOX 10940 PITTSBURGH, PA 15236 DR. KAMALENDU DAS, FETC, MORGANTOWN , WV TECHNICAL PROJECT OFFICER "US/DOE Patent Clearance is not required prior to the publication of this document" ii United States Government Disclaimer This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any

342

Chemicals from Biomass: Aerobic Oxidation of 5-Hydroxymethyl-2-Furaldehyde into Diformylfurane Catalyzed by Immobilized Vanadyl-Pyridine Complexes on Polymeric and Organofunctionalized Mesoporous Supports  

Science Journals Connector (OSTI)

Carbohydrates are currently viewed as promising feedstock for the production of chemicals with commercial interest. Among the different biomass-derived platform molecules, 5-hydroxymethyl furfural (HMF), obtained...

Onofre Casanova Navarro; Avelino Corma Cans; Sara Iborra Chornet

2009-04-01T23:59:59.000Z

343

METAL OXIDE NANOPARTICLES  

SciTech Connect

This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

2007-10-01T23:59:59.000Z

344

Prediction of blast damage from vapor cloud explosions  

SciTech Connect

The process industries handle a wide range of different materials and use them in different types of chemical reaction. Of particular concern is the prospect of damage and injury affecting the general public outside the boundary wall of the chemical plant. It is not wise to permit the construction of homes, schools or hospitals so close to chemical plants that they, and the people within, might be damaged or injured should there be an accidental explosion in the plant. The major hazard outside the plant is over-pressure, a consequence of an accidental explosion in a cloud of flammable gas or vapor (Vapor Cloud Explosion or VCE). It is the responsibility of plant management to ensure that any such accidental explosion is not so large as to endanger the public, and of the local planning authorities to ensure that homes, schools or hospitals are not sited so close to chemical plants that they may be endangered by accidental explosion. A vital tool for such authorities is a simple method of assessing the possible consequences of an accidental VCE. In this paper those methods of assessing the consequences are examined.

Phillips, H. [Phillips (H.), Buxton (United Kingdom)

1995-12-31T23:59:59.000Z

345

Means and method for vapor generation  

DOE Patents (OSTI)

A liquid, in heat transfer contact with a surface heated to a temperature well above the vaporization temperature of the liquid, will undergo a multiphase (liquid-vapor) transformation from 0% vapor to 100% vapor. During this transition, the temperature driving force or heat flux and the coefficients of heat transfer across the fluid-solid interface, and the vapor percentage influence the type of heating of the fluid--starting as "feedwater" heating where no vapors are present, progressing to "nucleate" heating where vaporization begins and some vapors are present, and concluding with "film" heating where only vapors are present. Unstable heating between nucleate and film heating can occur, accompanied by possibly large and rapid temperature shifts in the structures. This invention provides for injecting into the region of potential unstable heating and proximate the heated surface superheated vapors in sufficient quantities operable to rapidly increase the vapor percentage of the multiphase mixture by perhaps 10-30% and thereby effectively shift the multiphase mixture beyond the unstable heating region and up to the stable film heating region.

Carlson, Larry W. (Oswego, IL)

1984-01-01T23:59:59.000Z

346

A study of the physical, chemical and biological properties of TiO2 coatings produced by micro-arc oxidation in a CaP-based electrolyte  

Science Journals Connector (OSTI)

In this work, a porous and homogeneous titanium dioxide layer was grown on commercially pure titanium substrate using a micro-arc oxidation (MAO) process and CaP-based...2 coatings were characterized by X-ray di...

Amanda dos Santos; Joyce R. Araujo

2014-07-01T23:59:59.000Z

347

Metabolic Engineering of a Glycerol-Oxidative Pathway in Lactobacillus panis PM1 for Utilization of Bioethanol Thin Stillage: Potential To Produce Platform Chemicals from Glycerol  

Science Journals Connector (OSTI)

...glycerol from biodiesel production...genetic engineering strategies...Overall, introduction of an artificial...renewable fuels and chemicals...glycerol from biodiesel preparations...metabolic engineering for the production...biorenewable fuels and chemicals...metabolic engineering. Biotechnol...glycerol from biodiesel production...

Tae Sun Kang; Darren R. Korber; Takuji Tanaka

2014-10-03T23:59:59.000Z

348

Noncatalytic synthesis of carbon nanotubes by chemical vapor deposition  

SciTech Connect

A new method is proposed to obtain uniform arrays of multiwall carbon nanotubes without catalysts. Nanotubes have been formed by carbon condensation from a hydrogen-methane gas mixture activated by a dc discharge. Structural and morphological investigations of the obtained material were performed by Raman spectroscopy, scanning and transmission electron microscopy, energy-dispersive X-ray analysis, and electron energy loss spectroscopy. It is shown that the obtained nanotubes contain no impurities that could act as catalysts. Based on these experimental data, it is concluded that the nanotube synthesis under study is noncatalytic. Possible mechanisms of this synthesis are considered.

Ismagilov, R. R., E-mail: ismagil@polly.phys.msu.ru; Shvets, P. V.; Kharin, A. Yu.; Obraztsov, A. N. [Moscow State University (Russian Federation)

2011-03-15T23:59:59.000Z

349

Micro Chemical Vapor Deposition for the Synthesis of Nanomaterials  

E-Print Network (OSTI)

image in Figure 2.17(c) (FLIR A320 Camera, the emissivitysame from the IR camera (FLIR A320) and the thermal couple.thermal cameras (for example, FLIR systems). However, the

Zhou, Qin

2011-01-01T23:59:59.000Z

350

Graphene growth with giant domains using chemical vapor deposition  

E-Print Network (OSTI)

N. Martensson, Controlling graphene corrugation on lattice-in patterned epitaxial graphene, Science, 2006, 312(5777), 92009, 4(6), 17 A. K. Geim, Graphene: Status and Prospects,

Yong, Virginia; Hahn, H. Thomas

2011-01-01T23:59:59.000Z

351

Air-gap sacrificial materials by initiated chemical vapor deposition  

E-Print Network (OSTI)

P(neopentyl methacrylate-co-ethylene glycol dimethacrylate) copolymer, abbreviated as P(npMAco-EGDA), was selected as the potential air-gap sacrificial material among possible combination of twenty monomers and four ...

Lee, Long Hua

2007-01-01T23:59:59.000Z

352

Formation of amorphous metal alloys by chemical vapor deposition  

DOE Patents (OSTI)

Amorphous alloys are deposited by a process of thermal dissociation of mixtures of organometallic compounds and metalloid hydrides,e.g., transition metal carbonyl, such as nickel carbonyl and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit. 1 fig.

Mullendore, A.W.

1988-03-18T23:59:59.000Z

353

Direct chemical vapor deposition of graphene on dielectric surfaces  

DOE Patents (OSTI)

A substrate is provided that has a metallic layer on a substrate surface of a substrate. A film made of a two dimensional (2-D) material, such as graphene, is deposited on a metallic surface of the metallic layer. The metallic layer is dewet and/or removed to provide the film on the substrate surface.

Zhang, Yuegang; Ismach, Ariel

2014-04-29T23:59:59.000Z

354

Reduction and Oxidation Kinetics of a CaMn0.9Mg0.1O3?? Oxygen Carrier for Chemical-Looping Combustion  

Science Journals Connector (OSTI)

(Royal Society of Chemistry) ... Abad, A.; Adnez, J.; Garca-Labiano, F.; de Diego, L. F.; Gayn, P.Modeling of the chemical-looping combustion of methane using a Cu-based oxygen-carrier Combust. ...

Luis F. de Diego; Alberto Abad; Arturo Cabello; Pilar Gayn; Francisco Garca-Labiano; Juan Adnez

2013-11-22T23:59:59.000Z

355

Solution-gated graphene transistors for chemical and biological sensing applications  

E-Print Network (OSTI)

Various fabrication processes were developed in order to make graphene-based chemical and biological sensors on different substrates. Single-layer graphene is grown by chemical vapor deposition and then transferred to ...

Mailly, Benjamin

2013-01-01T23:59:59.000Z

356

Chemical Looping | Open Energy Information  

Open Energy Info (EERE)

Looping Looping Jump to: navigation, search Contents 1 Introduction 2 Process Description 3 Benefits 4 Oxygen Carriers 5 Multimedia 6 Patents 7 References 8 External Links Introduction Chemical looping or chemical looping combustion (CLC) is a novel technology that could provide the means to convert fossil fuels to electricity and provide carbon capture without significant efficiency or cost penalties. Chemical looping combustion is very similar to oxy-fuel combustion where there is no direct contact between air and fuel.[1] Oxygen is extracted from air, then the oxygen is reacted with the hydrocarbon fuel producing an exhaust gas composed of carbon dioxide and water vapor.[2] The water vapor is condensed out of the gas resulting in near 100% carbon dioxide stream that could be sequestered in the ground.

357

Non-Vapor Compression HVAC Technologies Report  

Energy.gov (U.S. Department of Energy (DOE))

While vapor-compression technologies have served heating, ventilation, and air-conditioning (HVAC) needs very effectively, and have been the dominant HVAC technology for close to 100 years, the conventional refrigerants used in vapor-compression equipment contribute to global climate change when released to the atmosphere. The Building Technologies Office is evaluating low-global warming potential (GWP) alternatives to vapor-compression technologies.

358

Mercury Vapor (Kooten, 1987) | Open Energy Information  

Open Energy Info (EERE)

Mercury Vapor (Kooten, 1987) Mercury Vapor (Kooten, 1987) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor (Kooten, 1987) Exploration Activity Details Location Unspecified Exploration Technique Mercury Vapor Activity Date Usefulness useful DOE-funding Unknown Notes Surface soil-mercury surveys are an inexpensive and useful exploration tool for geothermal resources. ---- Surface geochemical surveys for mercury were conducted in 16 areas in 1979-1981 by ARCO Oil and Gas Company as part of its geothermal evaluation program. Three techniques used together have proved satisfactory in evaluating surface mercury data. These are contouring, histograms and cumulative frequency plots of the data. Contouring geochemical data and constructing histograms are standard

359

Dosimeter for monitoring vapors and aerosols of organic compounds  

DOE Patents (OSTI)

A dosimeter is provided for collecting and detecting vapors and aerosols of organic compounds. The dosimeter comprises a lightweight, passive device that can be conveniently worn by a person as a badge or placed at a stationary location. The dosimeter includes a sample collector comprising a porous web treated with a chemical for inducing molecular displacement and enhancing phosphorescence. Compounds are collected onto the web by molecular diffusion. The web also serves as the sample medium for detecting the compounds by a room temperature phosphorescence technique. 7 figs.

Vo-Dinh, T.

1987-07-14T23:59:59.000Z

360

Near real time vapor detection and enhancement using aerosol adsorption  

SciTech Connect

A vapor sample detection method where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample.

Novick, Vincent J.; Johnson, Stanley A.

1997-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Near real time vapor detection and enhancement using aerosol adsorption  

DOE Patents (OSTI)

A vapor sample detection method is described where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample. 13 figs.

Novick, V.J.; Johnson, S.A.

1999-08-03T23:59:59.000Z

362

Near real time vapor detection and enhancement using aerosol adsorption  

DOE Patents (OSTI)

A vapor sample detection method where the vapor sample contains vapor and ambient air and surrounding natural background particles. The vapor sample detection method includes the steps of generating a supply of aerosol that have a particular effective median particle size, mixing the aerosol with the vapor sample forming aerosol and adsorbed vapor suspended in an air stream, impacting the suspended aerosol and adsorbed vapor upon a reflecting element, alternatively directing infrared light to the impacted aerosol and adsorbed vapor, detecting and analyzing the alternatively directed infrared light in essentially real time using a spectrometer and a microcomputer and identifying the vapor sample.

Novick, Vincent J. (Downers Grove, IL); Johnson, Stanley A. (Countryside, IL)

1999-01-01T23:59:59.000Z

363

Adsorption of NaCl Vapor at Elevated Temperature on Mineral Adsorbents  

Science Journals Connector (OSTI)

All adsorbents were crunched and sieved to ?1.001.25 mm adsorbent granularity used in the experiments. ... NaCl vapor was adsorbed at 1123 K for 5 h by each adsorbent. ... In the presence of chemical adsorption Na+ and Cl? would selectively adsorb and Na+ and Cl? would exist with a different molecule. ...

Yili Li; Jian Li; Shuiyuan Cheng; Wenjun Liang; Yuquan Jin; Youqing Wu; Jinsheng Gao

2007-09-21T23:59:59.000Z

364

Vapor Deposition of Ruthenium from an Amidinate Precursor Huazhi Li,a  

E-Print Network (OSTI)

Vapor Deposition of Ruthenium from an Amidinate Precursor Huazhi Li,a Damon B. Farmer,b Roy G. Gordon* ,a Youbo Lin,b Joost Vlassakb a Department of Chemistry and Chemical Biology and b School and potential applications. They can be used as electrodes for capacitors, in which their high work function

365

Program plan for the resolution of tank vapor issues  

SciTech Connect

Since 1987, workers at the Hanford Site waste tank farms in Richland, Washington, have reported strong odors emanating from the large, underground high-level radioactive waste storage tanks. Some of these workers have complained of symptoms (e.g., headaches, nausea) related to the odors. In 1992, the U.S. Department of Energy, which manages the Hanford Site, and Westinghouse Hanford Company determined that the vapor emissions coming from the tanks had not been adequately characterized and represented a potential health risk to workers in the immediate vicinity of the tanks. At that time, workers in certain areas of the tank farms were required to use full-face, supplied-breathing-air masks to reduce their exposure to the fugitive emissions. While use of supplied breathing air reduced the health risks associated with the fugitive emissions, it introduced other health and safety risks (e.g., reduced field of vision, air-line tripping hazards, and heat stress). In 1992, an aggressive program was established to assure proper worker protection while reducing the use of supplied breathing air. This program focuses on characterization of vapors inside the tanks and industrial hygiene monitoring in the tank farms. If chemical filtration systems for mitigation of fugitive emissions are deemed necessary, the program will also oversee their design and installation. This document presents the plans for and approach to resolving the Hanford Site high-level waste tank vapor concerns. It is sponsored by the Department of Energy Office of Environmental Restoration and Waste Management.

Osborne, J.W.; Huckaby, J.L.

1994-05-01T23:59:59.000Z

366

G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) Value-Added Product  

SciTech Connect

The G-Band Vapor Radiometer Precipitable Water Vapor (GVRPWV) value-added product (VAP) computes precipitable water vapor using neural network techniques from data measured by the GVR. The GVR reports time-series measurements of brightness temperatures for four channels located at 183.3 1, 3, 7, and 14 GHz.

Koontz, A; Cadeddu, M

2012-12-05T23:59:59.000Z

367

Metabolic Engineering of a Glycerol-Oxidative Pathway in Lactobacillus panis PM1 for Utilization of Bioethanol Thin Stillage: Potential To Produce Platform Chemicals from Glycerol  

Science Journals Connector (OSTI)

...utilize glycerol for the production of energy for growth and value-added chemicals...artificial pathway metabolized glycerol for energy production and converted it into lactic...condensed form for animal feed, is an energy- and cost-intensive process (1...

Tae Sun Kang; Darren R. Korber; Takuji Tanaka

2014-10-03T23:59:59.000Z

368

Kinetics of Oxidation of a Reduced Form of the Cu-Based Oxygen-Carrier for Use in Chemical-Looping Combustion  

Science Journals Connector (OSTI)

A co-precipitated mixture of CuO and Al2O3 is a good oxygen-carrier for chemical-looping combustion. The kinetics of regeneration of this reduced...2. Care was taken to ensure these measurements were not affected...

S. Y. Chuang; J. S. Dennis; A. N. Hayhurst

2010-01-01T23:59:59.000Z

369

Quantitative organic vapor-particle sampler  

DOE Patents (OSTI)

A quantitative organic vapor-particle sampler for sampling semi-volatile organic gases and particulate components. A semi-volatile organic reversible gas sorbent macroreticular resin agglomerates of randomly packed microspheres with the continuous porous structure of particles ranging in size between 0.05-10 .mu.m for use in an integrated diffusion vapor-particle sampler.

Gundel, Lara (Berkeley, CA); Daisey, Joan M. (Walnut Creek, CA); Stevens, Robert K. (Cary, NC)

1998-01-01T23:59:59.000Z

370

Vapor-Particle Separation Using Microporous Metallic Membrane in Crossflow Filtration  

SciTech Connect

Simultaneous separation of vapor and particles in industrial processes could be a key step toward manufacturing of high-quality goods. The separation is critical for successful measurement of volatile or semi-volatile aerosol particles, which no reliable technique exists. We have developed a technique for separation of vapor and particles simultaneously using a specialty microporous metallic membrane. The separator allows the thermally denuded particles traverse straight through the membrane tube, while the vapor molecules permeate through the membrane, separate from the particles and are removed subsequently. The separation technique virtually eliminates the possibility of contamination by vapor re- condensation. We tested the prototype of the vapor-particle separator (VPS) using aerosols prepared from sodium chloride to represent non-volatile aerosols. Chemical like dioctyl phthalate was chosen to represent volatile particles. The test aerosol particles were generated by an atomizer followed by a tandem differential mobility analyser to produce a stream of monodisperse particles in the size range of 10 to 100 nm. In real world particles, we tested the VPS using diesel engine particles that is a mixture of complex chemical composition. Number concentration of the nonvolatile particles reduced as the temperature increased, but the mode diameter of the aerosol population remained unchanged. Number concentration of the volatile particles was also reduced as the temperature increased, but their mode diameters became smaller as particles shrunk in diameter. Differences in the thermal behaviour of the particles were attributed to its transition energy barrier and evaporation rate. Mass balance analysis suggests the separation of vapor and test particles was reasonably complete. Thus, we conclude the VPS could provide an effective means for quantitative characterization of aerosol volatility and separation of vapors from particles.

Cheng, Mengdawn [ORNL] [ORNL

2013-01-01T23:59:59.000Z

371

ARM - Field Campaign - Water Vapor IOP  

NLE Websites -- All DOE Office Websites (Extended Search)

govCampaignsWater Vapor IOP govCampaignsWater Vapor IOP Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Water Vapor IOP 2000.09.18 - 2000.10.08 Lead Scientist : Henry Revercomb Data Availability Yes For data sets, see below. Description Scientific hypothesis: 1. Microwave radiometer (MWR) observations of the 22 GHz water vapor line can accurately constrain the total column amount of water vapor (assuming a calibration accuracy of 0.5 degC or better, which translates into 0.35 mm PWV). 2. Continuous profiling by Raman lidar provides a stable reference for handling sampling problems and observes a fixed column directly above the site only requiring a single height- independent calibration factor. 3. Agreement between the salt-bath calibrated in-situ probes, chilled

372

Chemical Science  

NLE Websites -- All DOE Office Websites (Extended Search)

Chemical Science Chemical Science Compton double ionization of helium in the region of the cross-section maximum B. Krässig, R.W. Dunford, D.S. Gemmell, S. Hasegawa, E.P. Kanter, H. Schmidt-Böcking, W. Schmitt, S.H. Southworth, Th. Weber, and L. Young Crystal structure analysis of microporous Na16Nb12.8Ti3.2O44.8(OH)3.2l8H2O and Na/Nb/Zr/O/H2O phases A. Tripathi, J. Parise, M. Nyman, T.M. Nenoff, and W. Harrison Double K-photoionization of heavy atoms R.W. Dunford, D.S. Gemmell, E.P. Kanter, B. Krässig, and S.H. Southworth Forward-backward asymmetries of atomic photoelectrons S.H. Southworth, B. Krässig, E.P. Kanter, J.C. Bilheux, R.W. Dunford, D.S. Gemmell, S. Hasegawa, and L. Young In situreduction of various iron oxides to form high-surface-area Fe-metal catalysts as studied by high-resolution powder diffraction

373

Nano-chemo-mechanical sensor array platform for high-throughput chemical analysis  

Science Journals Connector (OSTI)

We have developed a 2-D multiplexed cantilever array platform for high-throughput nanomechanical chemical sensing and analysis. After coating the cantilevers with alkane thiols having different functional end groups, we have performed vapor phase chemical sensing experiments with toluene and water vapor as targets. To overcome non-uniform responses caused by fabrication and imaging issues, the chemical response of each cantilever is self-calibrated using the thermal response of each cantilever. From these experiments, we could observe chemically induced nanoscale motion of cantilevers for various humidity or vapor concentration levels, and response differentiation with different functional end groups of thiols.

Si-Hyung Shawn Lim; Digvijay Raorane; Srinath Satyanarayana; Arunava Majumdar

2006-01-01T23:59:59.000Z

374

High Temperature Oxidation Resistance and Surface Electrical...  

NLE Websites -- All DOE Office Websites (Extended Search)

plates with oxidation resistant coatings. Candidate coatings must exhibit chemical and thermal-mechanical stability and high electrical conductivity during long-term...

375

Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour depositionDo we need silicon nanoclusters?  

SciTech Connect

In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at.%) and were annealed at different temperatures (600, 900, 1100?C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.

Podhorodecki, A., E-mail: artur.p.podhorodecki@pwr.wroc.pl; Golacki, L. W.; Zatryb, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Wang, J.; Jadwisienczak, W. [School of EECS, Ohio University, Stocker Center 363, Athens, Ohio 45701 (United States); Fedus, K. [Institute of Physics, Nicholas Copernicus University, Grudziadzka 5/7, 87-100 Torun (Poland); Wojcik, J.; Wilson, P. R. J.; Mascher, P. [Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, 1280 Main St. W, Hamilton, Ontario L8S4L7 (Canada)

2014-04-14T23:59:59.000Z

376

Hydrogen production from the steam-iron process with direct reduction of iron oxide by chemical looping combustion of coal char  

SciTech Connect

Experimental results performed with a fluidized-bed reactor supported the feasibility of the three processes including direct reduction of iron oxide by char, H{sub 2} production by the steam-iron process, and the oxidation of Fe{sub 3}O{sub 4} resulting from the steam-iron process to the original Fe{sub 2}O{sub 3} by air. Chars resulting from a Chinese lignite loaded with K{sub 2}CO{sub 3} were used successfully as a reducing material, leading to the reduction of Fe{sub 2}O{sub 3} to FeO and Fe for the steam-iron process, which was confirmed by both the off-gases concentrations and X-ray diffractometer analysis. The reduction of Fe{sub 2}O{sub 3} by K-10-char at 1073 K is desirable from the perspective of the carbon conversion rate and high concentration of CO{sub 2}. The carbon in char was completely converted to CO{sub 2} when the mass ratio of Fe{sub 2}O{sub 3}/K-10-char was increased to 10/0.3. The oxidation rate of K-10-char by Fe{sub 2}O{sub 3} without a gasifying agent was comparable to the K-10-char steam gasification rate. The fractions of FeO and Fe in the reduced residue were 43 and 57%, respectively, in the case of 3 g of Fe{sub 2}O{sub 3} and 0.5 g of K-10-char, which was verified by the total H{sub 2} yield equaling 1000 mL/g K-10-char from the steam-iron process. The time that it took to achieve complete oxidation of Fe{sub 3}O{sub 4} to Fe{sub 2}O{sub 3} by air with an 8.7% O{sub 2} concentration at 1073 K was about 15 min. 53 refs., 19 figs., 5 tabs.

Jing-biao Yang; Ning-sheng Cai; Zhen-shan Li [Tsinghua University, Beijing (China). Key Laboratory of Thermal Science and Power Engineering of Ministry of Education

2008-07-15T23:59:59.000Z

377

Energy balance in laser-irradiated vaporizing droplets  

Science Journals Connector (OSTI)

The interactions of vaporizing aerosols with a high energy laser beam are analyzed in the diffusive vaporization regime. This is the regime in which diffusive mass transport and...

Zardecki, Andrew; Armstrong, Robert L

1988-01-01T23:59:59.000Z

378

Ground Gravity Survey At Cove Fort Area - Vapor (Warpinski, Et...  

Open Energy Info (EERE)

Vapor (Warpinski, Et Al., 2004) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Ground Gravity Survey At Cove Fort Area - Vapor (Warpinski, Et...

379

CORRELATIONS BETWEEN VAPOR SATURATION, FLUID COMPOSITION, AND WELL DECLINE IN LARDERELLO  

SciTech Connect

A large body of field data from Larderello shows striking temporal correlations between decline of well flow-rate, produced gas/steam ratio, chloride concentration and produced vapor fraction. The latter is inferred from measured concentrations of non-condensible gases in samples of well fluid, using chemical phase equilibrium principles. Observed temporal changes in the vapor fractions can be interpreted in term of a ''multiple source'' model, as suggested by D'Amore and Truesdell (1979). This provides clues to the dynamics of reservoir depletion, and to the evaluation of well productivity and longevity.

D'Amore, F.; Pruess, K.

1985-01-22T23:59:59.000Z

380

Mineralogical and chemical assessment of concrete damaged by the oxidation of sulfide-bearing aggregates: Importance of thaumasite formation on reaction mechanisms  

SciTech Connect

Damages in concrete containing sulfide-bearing aggregates were recently observed in the Trois-Rivieres area (Quebec, Canada), characterized by rapid deterioration within 3 to 5 years after construction. A petrographic examination of concrete core samples was carried out using a combination of tools including: stereomicroscopic evaluation, polarized light microscopy, scanning electron microscopy, X-ray diffraction and electron microprobe analysis. The aggregate used to produce concrete was an intrusive igneous rock with different metamorphism degrees and various proportions of sulfide minerals. In the rock, sulfide minerals were often surrounded by a thin layer of carbonate minerals (siderite). Secondary reaction products observed in the damaged concrete include 'rust' mineral forms (e.g. ferric oxyhydroxides such as goethite, limonite (FeO (OH) nH{sub 2}O) and ferrihydrite), gypsum, ettringite and thaumasite. In the presence of water and oxygen, pyrrhotite oxidizes to form iron oxyhydroxides and sulphuric acid. The acid then reacts with the phases of the cement paste/aggregate and provokes the formation of sulfate minerals. Understanding both mechanisms, oxidation and internal sulfate attack, is important to be able to duplicate the damaging reaction in laboratory conditions, thus allowing the development of a performance test for evaluating the potential for deleterious expansion in concrete associated with sulfide-bearing aggregates.

Rodrigues, A. [Centre de Recherche sur les Infrastructures en Beton (CRIB), Universite Laval, 1065 ave de la Medecine, Quebec, QC, Canada G1V 0A6 (Canada)] [Centre de Recherche sur les Infrastructures en Beton (CRIB), Universite Laval, 1065 ave de la Medecine, Quebec, QC, Canada G1V 0A6 (Canada); Duchesne, J., E-mail: josee.duchesne@ggl.ulaval.ca [Centre de Recherche sur les Infrastructures en Beton (CRIB), Universite Laval, 1065 ave de la Medecine, Quebec, QC, Canada G1V 0A6 (Canada); Fournier, B. [Centre de Recherche sur les Infrastructures en Beton (CRIB), Universite Laval, 1065 ave de la Medecine, Quebec, QC, Canada G1V 0A6 (Canada)] [Centre de Recherche sur les Infrastructures en Beton (CRIB), Universite Laval, 1065 ave de la Medecine, Quebec, QC, Canada G1V 0A6 (Canada); Durand, B. [Institut de recherche d'Hydro-Quebec (IREQ), 1740 boul. Lionel-Boulet, Varennes, QC, Canada J3X 1S1 (Canada)] [Institut de recherche d'Hydro-Quebec (IREQ), 1740 boul. Lionel-Boulet, Varennes, QC, Canada J3X 1S1 (Canada); Rivard, P. [Universite de Sherbrooke, Sherbrooke, QC, Canada J1K 2R1 (Canada)] [Universite de Sherbrooke, Sherbrooke, QC, Canada J1K 2R1 (Canada); Shehata, M. [Ryerson University, 350 Victoria Street, Toronto, ON, Canada M5B 2K3 (Canada)] [Ryerson University, 350 Victoria Street, Toronto, ON, Canada M5B 2K3 (Canada)

2012-10-15T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
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381

3 - Chemically derived graphene  

Science Journals Connector (OSTI)

Abstract: The synthesis of graphene via chemical functionalisation of graphite is reviewed, including investigations that unravelled the atomic structure of resulting graphene oxide (GO) sheets in the suspension. The fundamental properties of GO are discussed and a summary of recent advances in device applications is provided.

R.S. Sundaram

2014-01-01T23:59:59.000Z

382

Nanostructured Oxygen Carriers for Chemical Looping Combustion and Chemical Looping Hydrogen Production.  

E-Print Network (OSTI)

??Chemical looping combustion (CLC) is an emerging technology for clean energy-production. In CLC, an oxygen carrier is periodically oxidized with air and then reduced in (more)

Solunke, Rahul Dushyantrao

2011-01-01T23:59:59.000Z

383

Recovering hydrocarbons from hydrocarbon-containing vapors  

DOE Patents (OSTI)

Values are recovered from a hydrocarbon-containing vapor by contacting the vapor with quench liquid consisting essentially of hydrocarbons to form a condensate and a vapor residue, the condensate and quench fluid forming a combined liquid stream. The combined liquid stream is mixed with a viscosity-lowering liquid to form a mixed liquid having a viscosity lower than the viscosity of the combined liquid stream to permit easy handling of the combined liquid stream. The quench liquid is a cooled portion of the mixed liquid. Viscosity-lowering liquid is separated from a portion of the mixed liquid and cycled to form additional mixed liquid.

Mirza, Zia I. (La Verne, CA); Knell, Everett W. (Los Alamitos, CA); Winter, Bruce L. (Danville, CA)

1980-09-30T23:59:59.000Z

384

High ethylene to ethane processes for oxidative coupling  

DOE Patents (OSTI)

Oxidative coupling of lower alkane to higher hydrocarbon is conducted using a catalyst comprising barium and/or strontium component and a metal oxide combustion promoter in the presence of vapor phase halogen component. High ethylene to ethane mole ratios in the product can be obtained over extended operating periods.

Chafin, R.B.; Warren, B.K.

1991-12-17T23:59:59.000Z

385

High ethylene to ethane processes for oxidative coupling  

DOE Patents (OSTI)

Oxidative coupling of lower alkane to higher hydrocarbon is conducted using catalyst comprising barium and/or strontium component and a metal oxide combustion promoter in the presence of vapor phase halogen component. High ethylene to ethane mole ratios in the product can be obtained over extended operating periods.

Chafin, Richard B. (Hurricane, WV); Warren, Barbara K. (Charleston, WV)

1991-01-01T23:59:59.000Z

386

Synthesis, crystal structure and physico-chemical properties of the new quaternary oxide Sr{sub 5}BiNi{sub 2}O{sub 9.6}  

SciTech Connect

A new black quaternary oxide Sr{sub 5}BiNi{sub 2}O{sub 9.6} was synthesized by solid state reaction at 1200 Degree-Sign C. Its structure was solved by electron crystallography and X-ray powder refinement, yielding a tetragonal structure with space group I4/mmm, a=5.3637 (2) A, c=17.5541(5) A, Z=4. The structure can be described as a stacking of (Bi,Sr)-O rocksalt slabs and SrNiO{sub 3-{delta}} perovskite slabs. The initial nickel valence is close to +3.1. Thermogravimetry and high-temperature oxygen coulometry showed that this compound has variable oxygen content as a function of temperature and oxygen pressure, and ultimately decomposes when heated in low oxygen pressure above 800 Degree-Sign C. It is a metallic conductor with n-type conduction. Its thermoelectric power was determined and found to be -20 and -38 {mu}V/K at 300 and 650 Degree-Sign C, respectively. Magnetic measurements confirm the nickel valence close to +3 and show evidence of magnetic ordering at 20 K. - Graphical Abstract: View of the structure of new Sr{sub 5}BiNi{sub 2}O{sub 9.6} oxide. Highlights: Black-Right-Pointing-Pointer Discovery of a new, unreported phase in the Sr-Bi-Ni-O system. Black-Right-Pointing-Pointer Full crystal structure determination by electron and X-ray diffraction. Black-Right-Pointing-Pointer Oxygen stoichiometry variation determination vs. P,T. Black-Right-Pointing-Pointer Determination of electrical and magnetic properties.

Novitskaya, Mariya; Makhnach, Leonid [Department of Chemistry, Belarus State University, 14 Leningradskaya Str., 220030 Minsk (Belarus); Ivashkevich, Ludmila [Institute of Physicochemical Problems, Belarus State University, 14 Leningradskaya Str., 220030 Minsk (Belarus); Pankov, Vladimir [Department of Chemistry, Belarus State University, 14 Leningradskaya Str., 220030 Minsk (Belarus); Klein, Holger; Rageau, Amelie; David, Jeremy [Institut Neel CNRS and Universite J. Fourier, BP 166, 38042 Grenoble Cedex (France); Gemmi, Mauro [Institut Neel CNRS and Universite J. Fourier, BP 166, 38042 Grenoble Cedex (France); Center for Nanotechnology Innovation, NEST Istituto Italiano di Tecnologia, Piazza S.SIlvestro 12, 56127 Pisa (Italy); Hadermann, Joke [Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020, Antwerp (Belgium); Strobel, Pierre, E-mail: pierre.strobel@grenoble.cnrs.fr [Institut Neel CNRS and Universite J. Fourier, BP 166, 38042 Grenoble Cedex (France)

2011-12-15T23:59:59.000Z

387

Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical  

E-Print Network (OSTI)

rf plasma-assisted metalorganic chemical vapor deposition G. C. Chen, D.-C. Lim, S.-B. Lee, and J-derived plasma-assisted metalorganic chemical vapor deposition MOCVD , and have studied the electrical compounds have become promising functional materials for integrated circuits, flash memories, and solar

Boo, Jin-Hyo

388

Oxidative Degradation of Monoethanolamine  

NLE Websites -- All DOE Office Websites (Extended Search)

Oxidative Degradation of Monoethanolamine Oxidative Degradation of Monoethanolamine Susan Chi Gary T. Rochelle* (gtr@che.utexas.edu, 512-471-7230) The University of Texas at Austin Department of Chemical Engineering Austin, Texas 78712 Prepared for presentation at the First National Conference on Carbon Sequestration, Washington, DC, May 14-17, 2001 Abstract Oxidative degradation of monoethanolamine (MEA) was studied under typical absorber condition of 55°C. The rate of evolution of NH 3 , which was indicative of the overall rate of degradation, was measured continuously in a batch system sparged with air. Dissolved iron from 0.0001 mM to 1 mM yields oxidation rates from 0.37 to 2 mM/hr in MEA solutions loaded with 0.4 mole CO 2 / mole MEA. Ethylenediaminetetraacetic acid (EDTA) and N,N-bis(2- hydroxyethyl)glycine effectively decrease the rate of oxidation in the presence of iron by 40 to

389

Chemical heat pump  

DOE Patents (OSTI)

A chemical heat pump system is disclosed for use in heating and cooling structures such as residences or commercial buildings. The system is particularly adapted to utilizing solar energy, but also increases the efficiency of other forms of thermal energy when solar energy is not available. When solar energy is not available for relatively short periods of time, the heat storage capacity of the chemical heat pump is utilized to heat the structure, as during nighttime hours. The design also permits home heating from solar energy when the sun is shining. The entire system may be conveniently rooftop located. In order to faciliate installation on existing structures, the absorber and vaporizer portions of the system may each be designed as flat, thin wall, thin pan vessels which materially increase the surface area available for heat transfer. In addition, this thin, flat configuration of the absorber and its thin walled (and therefore relatively flexible) construction permits substantial expansion and contraction of the absorber material during vaporization and absorption without generating voids which would interfere with heat transfer.

Greiner, Leonard (2853-A Hickory Pl., Costa Mesa, CA 92626)

1984-01-01T23:59:59.000Z

390

Chemical heat pump  

DOE Patents (OSTI)

A chemical heat pump system is disclosed for use in heating and cooling structures such as residences or commercial buildings. The system is particularly adapted to utilizing solar energy, but also increases the efficiency of other forms of thermal energy when solar energy is not available. When solar energy is not available for relatively short periods of time, the heat storage capacity of the chemical heat pump is utilized to heat the structure, as during nighttime hours. The design also permits home heating from solar energy when the sun is shining. The entire system may be conveniently rooftop located. In order to facilitate installation on existing structures, the absorber and vaporizer portions of the system may each be designed as flat, thin wall, thin pan vessels which materially increase the surface area available for heat transfer. In addition, this thin, flat configuration of the absorber and its thin walled (and therefore relatively flexible) construction permits substantial expansion and contraction of the absorber material during vaporization and absorption without generating voids which would interfere with heat transfer.

Greiner, Leonard (2853-A Hickory Pl., Costa Mesa, CA 92626)

1984-01-01T23:59:59.000Z

391

Chemical heat pump  

DOE Patents (OSTI)

A chemical heat pump system is disclosed for use in heating and cooling structures such as residences or commercial buildings. The system is particularly adapted to utilizing solar energy, but also increases the efficiency of other forms of thermal energy when solar energy is not available. When solar energy is not available for relatively short periods of time, the heat storage capacity of the chemical heat pump is utilized to heat the structure, as during nighttime hours. The design also permits home heating from solar energy when the sun is shining. The entire system may be conveniently rooftop located. In order to facilitate intallation on existing structures, the absorber and vaporizer portions of the system may each be designed as flat, thin wall, thin pan vessels which materially increase the surface area available for heat transfer. In addition, this thin, flat configuration of the absorber and its thin walled (and therefore relatively flexible) construction permits substantial expansion and contraction of the absorber material during vaporization and absorption without generating voids which would interfere with heat transfer.

Greiner, Leonard (2853-A Hickory Pl., Costa Mesa, CA 92626)

1984-01-01T23:59:59.000Z

392

Chemical heat pump  

DOE Patents (OSTI)

A chemical heat pump system is disclosed for use in heating and cooling structures such as residences or commercial buildings. The system is particularly adapted to utilizing solar energy, but also increases the efficiency of other forms of thermal energy when solar energy is not available. When solar energy is not available for relatively short periods of time, the heat storage capacity of the chemical heat pump is utilized to heat the structure, as during nighttime hours. The design also permits home heating from solar energy when the sun is shining. The entire system may be conveniently rooftop located. In order to facilitate installation on existing structures, the absorber and vaporizer portions of the system may each be designed as flat, thin wall, thin pan vessels which materially increase the surface area available for heat transfer. In addition, this thin, flat configuration of the absorber and its thin walled (and therefore relatively flexible) construction permits substantial expansion and contraction of the absorber material during vaporization and absorption without generating voids which would interfere with heat transfer.

Greiner, Leonard (2853-A Hickory Pl., Costa Mesa, CA 92626)

1981-01-01T23:59:59.000Z

393

Chemical Storage-Overview  

NLE Websites -- All DOE Office Websites (Extended Search)

Storage - Storage - Overview Ali T-Raissi, FSEC Hydrogen Storage Workshop Argonne National Laboratory, Argonne, Illinois August 14-15, 2002 Hydrogen Fuel - Attributes * H 2 +½ O 2 → H 2 O (1.23 V) * High gravimetric energy density: 27.1 Ah/g, based on LHV of 119.93 kJ/g * 1 wt % = 189.6 Wh/kg (0.7 V; i.e. η FC = 57%) * Li ion cells: 130-150 Wh/kg Chemical Hydrides - Definition * They are considered secondary storage methods in which the storage medium is expended - primary storage methods include reversible systems (e.g. MHs & C-nanostructures), GH 2 & LH 2 storage Chemical Hydrides - Definition (cont.) * The usual chemical hydride system is reaction of a reactant containing H in the "-1" oxidation state (hydride) with a reactant containing H in the "+1" oxidation

394

APPLICATION OF STIR BAR SORPTIVE EXTRACTION TO ANALYSIS OF VOLATILE AND SEMIVOLATILE ORGANIC CHEMICALS OF POTENTIAL CONCERN IN SOLIDS AND AQUEOUS SAMPLES FROM THE HANFORD SITE  

SciTech Connect

Stir bar sorptive extraction was applied to aqueous and solid samples for the extraction and analysis of organic compounds from the Hanford chemicals of potential concern list, as identified in the vapor data quality objectives. The 222-S Laboratory analyzed these compounds from vapor samples on thermal desorption tubes as part of the Hanford Site industrial hygiene vapor sampling effort.

FRYE JM; KUNKEL JM

2009-03-05T23:59:59.000Z

395

A simple grand canonical approach to compute the vapor pressure of bulk and finite size systems  

SciTech Connect

In this article we introduce a simple grand canonical screening (GCS) approach to accurately compute vapor pressures from molecular dynamics or Monte Carlo simulations. This procedure entails a screening of chemical potentials using a conventional grand canonical scheme, and therefore it is straightforward to implement for any kind of interface. The scheme is validated against data obtained from Gibbs ensemble simulations for water and argon. Then, it is applied to obtain the vapor pressure of the coarse-grained mW water model, and it is shown that the computed value is in excellent accord with the one formally deduced using statistical thermodynamics arguments. Finally, this methodology is used to calculate the vapor pressure of a water nanodroplet of 94 molecules. Interestingly, the result is in perfect agreement with the one predicted by the Kelvin equation for a homogeneous droplet of that size.

Factorovich, Matas H.; Scherlis, Damin A. [Departamento de Qumica Inorgnica, Analtica y Qumica Fsica/INQUIMAE, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Ciudad Universitaria, Pab. II, Buenos Aires C1428EHA (Argentina)] [Departamento de Qumica Inorgnica, Analtica y Qumica Fsica/INQUIMAE, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Ciudad Universitaria, Pab. II, Buenos Aires C1428EHA (Argentina); Molinero, Valeria [Department of Chemistry, University of Utah, 315 South 1400 East, Salt Lake City, Utah 84112-0850 (United States)] [Department of Chemistry, University of Utah, 315 South 1400 East, Salt Lake City, Utah 84112-0850 (United States)

2014-02-14T23:59:59.000Z

396

Vapor Power Systems MAE 4263 Final Exam  

E-Print Network (OSTI)

Vapor Power Systems MAE 4263 Final Exam Wednesday, May 5, 2004 Prof. P.M. Moretti Key Instructions, then think, then write! 1. What is the dewpoint of the exhaust of your car, if the gasoline consists2 so that the mole fraction of water vapor is yH2 O = 9 9 + 8 + 47 = 0:14063 pH2 O = 0:14063 14

397

Optical monitor for water vapor concentration  

DOE Patents (OSTI)

A system for measuring and monitoring water vapor concentration in a sample uses as a light source an argon discharge lamp, which inherently emits light with a spectral line that is close to a water vapor absorption line. In a preferred embodiment, the argon line is split by a magnetic field parallel to the direction of light propagation from the lamp into sets of components of downshifted and upshifted frequencies of approximately 1575 Gauss. The downshifted components are centered on a water vapor absorption line and are thus readily absorbed by water vapor in the sample; the upshifted components are moved away from that absorption line and are minimally absorbed. A polarization modulator alternately selects the upshifted components or downshifted components and passes the selected components to the sample. After transmission through the sample, the transmitted intensity of a component of the argon line varies as a result of absorption by the water vapor. The system then determines the concentration of water vapor in the sample based on differences in the transmitted intensity between the two sets of components. In alternative embodiments alternate selection of sets of components is achieved by selectively reversing the polarity of the magnetic field or by selectively supplying the magnetic field to the emitting plasma. 5 figs.

Kebabian, P.

1998-06-02T23:59:59.000Z

398

Optical monitor for water vapor concentration  

DOE Patents (OSTI)

A system for measuring and monitoring water vapor concentration in a sample uses as a light source an argon discharge lamp, which inherently emits light with a spectral line that is close to a water vapor absorption line. In a preferred embodiment, the argon line is split by a magnetic field parallel to the direction of light propagation from the lamp into sets of components of downshifted and upshifted frequencies of approximately 1575 Gauss. The downshifted components are centered on a water vapor absorption line and are thus readily absorbed by water vapor in the sample; the upshifted components are moved away from that absorption line and are minimally absorbed. A polarization modulator alternately selects the upshifted components or downshifted components and passes the selected components to the sample. After transmission through the sample, the transmitted intensity of a component of the argon line varies as a result of absorption by the water vapor. The system then determines the concentration of water vapor in the sample based on differences in the transmitted intensity between the two sets of components. In alternative embodiments alternate selection of sets of components is achieved by selectively reversing the polarity of the magnetic field or by selectively supplying the magnetic field to the emitting plasma.

Kebabian, Paul (Acton, MA)

1998-01-01T23:59:59.000Z

399

Tank 241-C-111 headspace gas and vapor sample results - August 1993 samples  

SciTech Connect

Tank 241-C-111 is on the ferrocyanide Watch List. Gas and vapor samples were collected to assure safe conditions before planned intrusive work was performed. Sample analyses showed that hydrogen is about ten times higher in the tank headspace than in ambient air. Nitrous oxide is about sixty times higher than ambient levels. The hydrogen cyanide concentration was below 0.04 ppbv, and the average NO{sub x} concentration was 8.6 ppmv.

Huckaby, J.L.

1994-11-14T23:59:59.000Z

400

Chemical phenomena in solid-state voltammetry in polymer solvents  

SciTech Connect

This paper, aimed at delineating significant chemical effects in solid-state voltammetry, describes electrochemical oxidations and reductions of electroactive monomer solutes dissolved in and diffusing through rigid and semirigid polymer electrolyte solvents. Sorption of organic monomer vapors into poly(ethylene oxide) films yields polymer solvents whose chemistry is dominated by that of the sorbed monomer as shown by coordination and precipitation effects. The dynamics of plasticization-induced changes in transport rates are quite rapid. Physical diffusion in the polymer solvent in slow enough that electron hopping reactions measurably enhance charge transport rates; the effect was used to estimate a lower limit for the (Co(bpy)/sub 3/)/sup 2+/+/ self-exchange rate constant of 2 /times/ 10/sup 9/ M/sup /minus/1/ s/sup /minus/1/. It is possible to erect polymeric film transport barriers at the electrode/polymer solvent interface and to measure the rate of permeation of monomer complexes from the polymer solvent into the polymer transport barrier film. Polymeric films of Os and Ru polypyridine complexes can be electropolymerized from polymer solutions of the corresponding monomers. Solid-state voltammetry can be extended to other polymer solvents including sulfonated polystyrene, poly(vinyl chloride), Nafion, and poly(acrylamide) gel.

Geng, L.; Reed, R.A.; Kim, M.H.; Wooster, T.T.; Oliver, B.N.; Egekeze, J.; Kennedy, R.T.; Jorgenson, J.W.; Parcher, J.F.; Murray, R.W.

1989-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications  

SciTech Connect

Aluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nanoelectromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro-channels for fuel cell applications, and micromechanical resonators. This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 m to 110 m and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.

Rodak, L.E.; Kuchibhatla, S.; Famouri, P.; Ting, L.; Korakakis, D.

2008-01-01T23:59:59.000Z

402

Vapor Pressures and Vaporization, Sublimation, and Fusion Enthalpies of Some Fatty Acids  

E-Print Network (OSTI)

Vapor Pressures and Vaporization, Sublimation, and Fusion Enthalpies of Some Fatty Acids Joe A. Wilson and James S. Chickos* Department of Chemistry and Biochemistry, University of MissouriSt. Louis, St. Louis, Missouri 63121, United States *S Supporting Information ABSTRACT: Sublimation enthalpies

Chickos, James S.

403

Vapor Pressures and Vaporization Enthalpies of a Series of Dialkyl Phthalates by Correlation Gas Chromatography  

E-Print Network (OSTI)

Chromatography Chase Gobble and James Chickos* Department of Chemistry and Biochemistry University of Missouri-St. Louis, St. Louis Missouri 63121, United States Sergey P. Verevkin Department of Physical Chemistry: Experimental vapor pressures, vaporization, fusion and sublimation enthalpies of a number of dialkyl

Chickos, James S.

404

Next Generation Non-particulate Dry Nonwoven Pad for Chemical Warfare Agent Decontamination  

SciTech Connect

New, non-particulate decontamination materials promise to reduce both military and civilian casualties by enabling individuals to decontaminate themselves and their equipment within minutes of exposure to chemical warfare agents or other toxic materials. One of the most promising new materials has been developed using a needlepunching nonwoven process to construct a novel and non-particulate composite fabric of multiple layers, including an inner layer of activated carbon fabric, which is well-suited for the decontamination of both personnel and equipment. This paper describes the development of a composite nonwoven pad and compares efficacy test results for this pad with results from testing other decontamination systems. The efficacy of the dry nonwoven fabric pad was demonstrated specifically for decontamination of the chemical warfare blister agent bis(2-chloroethyl)sulfide (H or sulfur mustard). GC/MS results indicate that the composite fabric was capable of significantly reducing the vapor hazard from mustard liquid absorbed into the nonwoven dry fabric pad. The mustard adsorption efficiency of the nonwoven pad was significantly higher than particulate activated carbon (p=0.041) and was similar to the currently fielded US military M291 kit (p=0.952). The nonwoven pad has several advantages over other materials, especially its non-particulate, yet flexible, construction. This composite fabric was also shown to be chemically compatible with potential toxic and hazardous liquids, which span a range of hydrophilic and hydrophobic chemicals, including a concentrated acid, an organic solvent and a mild oxidant, bleach.

Ramkumar, S S; Love, A; Sata, U R; Koester, C J; Smith, W J; Keating, G A; Hobbs, L; Cox, S B; Lagna, W M; Kendall, R J

2008-05-01T23:59:59.000Z

405

Chemical heat pump project: Final report  

SciTech Connect

Solid/vapor working media can be used as working fluids in industrial heat pumps for heat amplifier and temperature amplifier concepts. This report describes the theoretical investigation of candidate solid/vapor fluids and the development of single and multi-stage heat pump cycles. Ammoniated complex compounds, hydrated complex compounds, metal carbonate-metal oxide media, and metal hydrides were investigated. A preliminary computer model was developed to predict the performance characteristics of a single-stage complex compound temperature amplifier and to outline the limitations of such concepts. A preliminary first cost calculation was performed in order to determine the economical feasibility of solid/vapor industrial heat pumps in comparison to boilers nd state-of-the-art heat pump equipment.

Not Available

1985-01-01T23:59:59.000Z

406

ARM - Field Campaign - Water Vapor IOP  

NLE Websites -- All DOE Office Websites (Extended Search)

govCampaignsWater Vapor IOP govCampaignsWater Vapor IOP Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Water Vapor IOP 1996.09.10 - 1996.09.30 Lead Scientist : Henry Revercomb For data sets, see below. Summary SCHEDULE This IOP will be conducted from September 10 - 30, 1996 (coincident with the Fall ARM-UAV IOP). Instruments that do not require supervision will be operated continuously during this period. Instruments that do require supervision are presently planned to be operated for 8-hour periods each day. Because it is necessary to cover as broad a range of environmental conditions as possible, the daily 8-hour period will be shifted across the diurnal cycle as deemed appropriate during the IOP (but will be maintained as a contiguous 8-hour block).

407

atmospheric water vapor | OpenEI  

Open Energy Info (EERE)

atmospheric water vapor atmospheric water vapor Dataset Summary Description (Abstract): Monthly Average Solar Resource for 2-axis tracking concentrating collectors for Mexico, Central America, and the Caribbean Islands. (Purpose): Provide information on the solar resource potential for the data domain. The insolation values represent the average solar energy available to a concentrating collector, such as a dish collector, which tracks the sun continuously. Source NREL Date Released July 31st, 2006 (8 years ago) Date Updated October 30th, 2007 (7 years ago) Keywords atmospheric water vapor Carribean Islands Central America DNI GIS Mexico NREL GEF solar SWERA UNEP Data application/zip icon Download Shapefile (zip, 247.8 KiB) text/csv icon Download Data (csv, 370.6 KiB) Quality Metrics Level of Review Some Review

408

atmoshperic water vapor | OpenEI  

Open Energy Info (EERE)

atmoshperic water vapor atmoshperic water vapor Dataset Summary Description (Abstract): Monthly Average Solar Resource for flat-plate collectors tilted at latitude for China. Source NREL Date Released April 12th, 2005 (9 years ago) Date Updated October 30th, 2007 (7 years ago) Keywords atmoshperic water vapor China GEF GIS NREL solar SWERA TILT UNEP Data application/zip icon Download Shapefile (zip, 625.6 KiB) text/csv icon Download Data (csv, 704.1 KiB) Quality Metrics Level of Review Some Review Comment Temporal and Spatial Coverage Frequency Time Period 01/01/1985 - 12/31/1991 License License Open Data Commons Public Domain Dedication and Licence (PDDL) Comment Rate this dataset Usefulness of the metadata Average vote Your vote Usefulness of the dataset Average vote Your vote Ease of access

409

Vapor characterization of Tank 241-C-103  

SciTech Connect

The Westinghouse Hanford Company Tank Vapor Issue Resolution Program has developed, in cooperation with Northwest Instrument Systems, Inc., Oak Ridge National Laboratory, Oregon Graduate Institute of Science and Technology, Pacific Northwest Laboratory, and Sandia National Laboratory, the equipment and expertise to characterize gases and vapors in the high-level radioactive waste storage tanks at the Hanford Site in south central Washington State. This capability has been demonstrated by the characterization of the tank 241-C-103 headspace. This tank headspace is the first, and for many reasons is expected to be the most problematic, that will be characterized (Osborne 1992). Results from the most recent and comprehensive sampling event, sample job 7B, are presented for the purpose of providing scientific bases for resolution of vapor issues associated with tank 241-C-103. This report is based on the work of Clauss et al. 1994, Jenkins et al. 1994, Ligotke et al. 1994, Mahon et al. 1994, and Rasmussen and Einfeld 1994. No attempt has been made in this report to evaluate the implications of the data presented, such as the potential impact of headspace gases and vapors to tank farm workers health. That and other issues will be addressed elsewhere. Key to the resolution of worker health issues is the quantitation of compounds of toxicological concern. The Toxicology Review Panel, a panel of Pacific Northwest Laboratory experts in various areas, of toxicology, has chosen 19 previously identified compounds as being of potential toxicological concern. During sample job 7B, the sampling and analytical methodology was validated for this preliminary list of compounds of toxicological concern. Validation was performed according to guidance provided by the Tank Vapor Conference Committee, a group of analytical chemists from academic institutions and national laboratories assembled and commissioned by the Tank Vapor Issue Resolution Program.

Huckaby, J.L. [Westinghouse Hanford Co., Richland, WA (United States); Story, M.S. [Northwest Instrument Systems, Inc. Richland, WA (United States)

1994-06-01T23:59:59.000Z

410

Chemically assisted mechanical refrigeration process  

DOE Patents (OSTI)

There is provided a chemically assisted mechanical refrigeration process including the steps of: mechanically compressing a refrigerant stream which includes vaporized refrigerant; contacting the refrigerant with a solvent in a mixer at a pressure sufficient to promote substantial dissolving of the refrigerant in the solvent in the mixer to form a refrigerant-solvent solution while concurrently placing the solution in heat exchange relation with a working medium to transfer energy to the working medium, said refrigerant-solvent solution exhibiting a negative deviation from Raoult's Law; reducing the pressure over the refrigerant-solvent solution in an evaporator to allow the refrigerant to vaporize and substantially separate from the solvent while concurrently placing the evolving refrigerant-solvent solution in heat exchange relation with a working medium to remove energy from the working medium to thereby form a refrigerant stream and a solvent stream; and passing the solvent and refrigerant stream from the evaporator. 5 figs.

Vobach, A.R.

1987-11-24T23:59:59.000Z

411

Chemically assisted mechanical refrigeration process  

DOE Patents (OSTI)

There is provided a chemically assisted mechanical refrigeration process including the steps of: mechanically compressing a refrigerant stream which includes vaporized refrigerant; contacting the refrigerant with a solvent in a mixer at a pressure sufficient to promote substantial dissolving of the refrigerant in the solvent in the mixer to form a refrigerant-solvent solution while concurrently placing the solution in heat exchange relation with a working medium to transfer energy to the working medium, said refrigerant-solvent solution exhibiting a negative deviation from Raoult's Law; reducing the pressure over the refrigerant-solvent solution in an evaporator to allow the refrigerant to vaporize and substantially separate from the solvent while concurrently placing the evolving refrigerant-solvent solution in heat exchange relation with a working medium to remove energy from the working medium to thereby form a refrigerant stream and a solvent stream; and passing the solvent and refrigerant stream from the evaporator. 5 figs.

Vobach, A.R.

1987-06-23T23:59:59.000Z

412

Thermal electric vapor trap arrangement and method  

DOE Patents (OSTI)

A technique for trapping vapor within a section of a tube is disclosed herein. This technique utilizes a conventional, readily providable thermal electric device having a hot side and a cold side and means for powering the device to accomplish this. The cold side of this device is positioned sufficiently close to a predetermined section of the tube and is made sufficiently cold so that any condensable vapor passing through the predetermined tube section is condensed and trapped, preferably within the predetermined tube section itself. 4 figs.

Alger, T.

1988-03-15T23:59:59.000Z

413

Diode pumped alkali vapor fiber laser  

DOE Patents (OSTI)

A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

Payne, Stephen A. (Castro Valley, CA); Beach, Raymond J. (Livermore, CA); Dawson, Jay W. (Livermore, CA); Krupke, William F. (Pleasanton, CA)

2006-07-26T23:59:59.000Z

414

Diode pumped alkali vapor fiber laser  

DOE Patents (OSTI)

A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

Payne, Stephen A. (Castro Valley, CA); Beach, Raymond J. (Livermore, CA); Dawson, Jay W. (Livermore, CA); Krupke, William F. (Pleasanton, CA)

2007-10-23T23:59:59.000Z

415

Efficient ternary sources of working-body vapors for thermionic converters  

SciTech Connect

The results of experiments to determine the energy characteristics of a cylindrical thermionic converter (TC) are presented. The TC investigated had ternary working-body vapor sources based on multicomponent cesium systems with either bismuth oxide, vanadium oxide, or tungsten oxide additions. Sorption characteristics of the systems were first determined, and then the ternary source was operated as part of the TC. The kinetics of the interaction of cesium vapor with the oxides was studied gravimetrically at various collector temperatures. The cesium TC electrical power output was increased 40 to 60% with a Cs{sub 12}Bi{sub 2}O{sub 3} ternary source in the arc mode. A Cs{sub 3}V{sub 2}O{sub 5} system increased TC output power from 20 to 40%, depending on emitter temperature. For the two Cs{sub x}WO{sub 3} sources examined, power increased almost 50%. The ternary sources examined also extended the working temperature range of the TC. 18 refs., 5 figs.

Kalandarishvili, A.G.; Kashiya, V.G.

1994-11-01T23:59:59.000Z

416

Subscriber access provided by MIT Nano Letters is published by the American Chemical Society. 1155 Sixteenth  

E-Print Network (OSTI)

(UHV) anneal- ing of single-crystal SiC (0001),13,15 UHV chemical vapor deposition (CVD) on single substrate material. Furthermore, the high cost of the single crystal substrates and the UHV conditions

417

Chemical Looping Combustion Kinetics  

SciTech Connect

One of the most promising methods of capturing CO{sub 2} emitted by coal-fired power plants for subsequent sequestration is chemical looping combustion (CLC). A powdered metal oxide such as NiO transfers oxygen directly to a fuel in a fuel reactor at high temperatures with no air present. Heat, water, and CO{sub 2} are released, and after H{sub 2}O condensation the CO{sub 2} (undiluted by N{sub 2}) is ready for sequestration, whereas the nickel metal is ready for reoxidation in the air reactor. In principle, these processes can be repeated endlessly with the original nickel metal/nickel oxide participating in a loop that admits fuel and rejects ash, heat, and water. Our project accumulated kinetic rate data at high temperatures and elevated pressures for the metal oxide reduction step and for the metal reoxidation step. These data will be used in computational modeling of CLC on the laboratory scale and presumably later on the plant scale. The oxygen carrier on which the research at Utah is focused is CuO/Cu{sub 2}O rather than nickel oxide because the copper system lends itself to use with solid fuels in an alternative to CLC called 'chemical looping with oxygen uncoupling' (CLOU).

Edward Eyring; Gabor Konya

2009-03-31T23:59:59.000Z

418

Investigation of gasification chemical looping combustion combined cycle performance  

SciTech Connect

A novel combined cycle based on coal gasification and chemical looping combustion (CLC) offers a possibility of both high net power efficiency and separation of the greenhouse gas CO{sub 2}. The technique involves the use of a metal oxide as an oxygen carrier, which transfers oxygen from the combustion air to the fuel, and the avoidance of direct contact between fuel and combustion air. The fuel gas is oxidized by an oxygen carrier, an oxygen-containing compound, in the fuel reactor. The oxygen carrier in this study is NiO. The reduced oxygen carrier, Ni, in the fuel reactor is regenerated by the air in the air reactor. In this way, fuel and air are never mixed, and the fuel oxidation products CO{sub 2} and water vapor leave the system undiluted by air. All that is needed to get an almost pure CO{sub 2} product is to condense the water vapor and to remove the liquid water. When the technique is combined with gas turbine and heat recovery steam generation technology, a new type of combined cycle is formed which gives a possibility of obtaining high net power efficiency and CO{sub 2} separation. The performance of the combined cycle is simulated using the ASPEN software tool in this paper. The influence of the water/coal ratio on the gasification and the influence of the CLC process parameters such as the air reactor temperature, the turbine inlet supplementary firing, and the pressure ratio of the compressor on the system performance are discussed. Results show that, assuming an air reactor temperature of 1200{sup o}C, a gasification temperature of 1100 {sup o}C, and a turbine inlet temperature after supplementary firing of 1350{sup o}C, the system has the potential to achieve a thermal efficiency of 44.4% (low heating value), and the CO{sub 2} emission is 70.1 g/(kW h), 90.1% of the CO{sub 2} captured. 22 refs., 7 figs., 6 tabs.

Wenguo Xiang; Sha Wang; Tengteng Di [Southeast University, Nanjing (China). Key Laboratory of Clean Coal Power Generation and Combustion Technology of the Ministry of Education

2008-03-15T23:59:59.000Z

419

Distribution of binding energies of a water molecule in the water liquid-vapor interface  

SciTech Connect

Distributions of binding energies of a water molecule in the water liquid-vapor interface are obtained on the basis of molecular simulation with the SPC/E model of water. These binding energies together with the observed interfacial density profile are used to test a minimally conditioned Gaussian quasi-chemical statistical thermodynamic theory. Binding energy distributions for water molecules in that interfacial region clearly exhibit a composite structure. A minimally conditioned Gaussian quasi-chemical model that is accurate for the free energy of bulk liquid water breaks down for water molecules in the liquid-vapor interfacial region. This breakdown is associated with the fact that this minimally conditioned Gaussian model would be inaccurate for the statistical thermodynamics of a dilute gas. Aggressive conditioning greatly improves the performance of that Gaussian quasi-chemical model. The analogy between the Gaussian quasi-chemical model and dielectric models of hydration free energies suggests that naive dielectric models without the conditioning features of quasi-chemical theory will be unreliable for these interfacial problems. Multi-Gaussian models that address the composite nature of the binding energy distributions observed in the interfacial region might provide a mechanism for correcting dielectric models for practical applications.

Chempath, Shaji [Los Alamos National Laboratory; Pratt, Lawrence R [TULANE UNIV

2008-01-01T23:59:59.000Z

420

Advancing Explosives Detection Capabilities: Vapor Detection  

ScienceCinema (OSTI)

A new, PNNL-developed method provides direct, real-time detection of trace amounts of explosives such as RDX, PETN and C-4. The method selectively ionizes a sample before passing the sample through a mass spectrometer to detect explosive vapors. The method could be used at airports to improve aviation security.

Atkinson, David

2014-07-24T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Program performs vapor-liquid equilibrium calculations  

SciTech Connect

A program designed for the Hewlett-Packard HP-41CV or 41C calculators solves basic vapor-liquid equilibrium problems, including figuring the dewpoint, bubblepoint, and equilibrium flash. The algorithm uses W.C. Edmister's method for predicting ideal-solution K values.

Rice, V.L.

1982-06-28T23:59:59.000Z

422

Synchroton X-Ray Studies of Liquid-Vapor Interfaces  

Science Journals Connector (OSTI)

The variation of density across the liquid-vapor interface from essentially zero density far out in the vapor phase to a homogeneous density deep in the liquid phase can be determined by X-ray reflectivity mea...

J. Als-Nielsen

1988-01-01T23:59:59.000Z

423

Vapor intrusion modeling : limitations, improvements, and value of information analyses  

E-Print Network (OSTI)

Vapor intrusion is the migration of volatile organic compounds (VOCs) from a subsurface source into the indoor air of an overlying building. Vapor intrusion models, including the Johnson and Ettinger (J&E) model, can be ...

Friscia, Jessica M. (Jessica Marie)

2014-01-01T23:59:59.000Z

424

Estimating the Atmospheric Water Vapor Content from Sun Photometer Measurements  

Science Journals Connector (OSTI)

The differential absorption technique for estimating columnar water vapor values from the analysis of sunphotometric measurements with wide- and narrowband interferential filters centered near 0.94 ?m is discussed and adapted. Water vapor line ...

Artemio Plana-Fattori; Michel Legrand; Didier Tanr; Claude Devaux; Anne Vermeulen; Philippe Dubuisson

1998-08-01T23:59:59.000Z

425

OPTIMIZATION OF INJECTION INTO VAPOR-DOMINATED GEOTHERMAL  

E-Print Network (OSTI)

given by U.S. Department of Energy, Geothermal Division. #12;vii Table of Contents ABSTRACTOPTIMIZATION OF INJECTION INTO VAPOR-DOMINATED GEOTHERMAL RESERVOIRS CONSIDERING ADSORPTION governing the behavior of vapor- dominated geothermal reservoirs. These mechanisms affect both

Stanford University

426

ITP Chemicals: Final Report: Evaluation of Alternative Technologies...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Ammonia, and Terephthalic Acid, December 2007 ITP Chemicals: Final Report: Evaluation of Alternative Technologies for Ethylene, Caustic-Chlorine, Ethylene Oxide, Ammonia, and...

427

Natural Ores as Oxygen Carriers in Chemical Looping Combustion  

Science Journals Connector (OSTI)

Natural Ores as Oxygen Carriers in Chemical Looping Combustion ... Chemical looping combustion (CLC) is a combustion technology that utilizes oxygen from oxygen carriers (OC), such as metal oxides, instead of air to combust fuels. ...

Hanjing Tian; Ranjani Siriwardane; Thomas Simonyi; James Poston

2013-01-02T23:59:59.000Z

428

Detection of concealed and buried chemicals by using multifrequency excitations  

SciTech Connect

In this paper, we present a new type of concealed and buried chemical detection system by stimulating and enhancing spectroscopic signatures with multifrequency excitations, which includes a low frequency gradient dc electric field, a high frequency microwave field, and higher frequency infrared (IR) radiations. Each excitation frequency plays a unique role. The microwave, which can penetrate into the underground and/or pass through the dielectric covers with low attenuation, could effectively transform its energy into the concealed and buried chemicals and increases its evaporation rate from the sample source. Subsequently, a gradient dc electric field, generated by a Van De Graaff generator, not only serves as a vapor accelerator for efficiently expediting the transportation process of the vapor release from the concealed and buried chemicals but also acts as a vapor concentrator for increasing the chemical concentrations in the detection area, which enables the trace level chemical detection. Finally, the stimulated and enhanced vapors on the surface are detected by the IR spectroscopic fingerprints. Our theoretical and experimental results demonstrate that more than sixfold increase in detection signal can be achieved by using this proposed technology. The proposed technology can also be used for standoff detection of concealed and buried chemicals by adding the remote IR and/or thermal spectroscopic and imaging detection systems.

Gao Yaohui; Chen, Meng-Ku; Yang, Chia-En; Chang, Yun-Ching; Yao, Jim; Cheng Jiping; Yin, Stuart [Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Hui Rongqing [Department of Electrical Engineering and Computer Science, University of Kansas, Lawrence, Kansas 66045 (United States); Ruffin, Paul; Brantley, Christina; Edwards, Eugene [US Army Aviation and Missile Research Development and Engineering Center Redstone Arsenal, Alabama 35898 (United States); Luo, Claire [General Opto Solutions, LLC State College, Pennsylvania 16803 (United States)

2010-08-15T23:59:59.000Z

429

Vapor-deposited /sup 235/UO/sub 2/ layers for an ultra-high-sensitivity fission counter  

SciTech Connect

After evaluating the properties of uranium oxide coatings prepared by electrodeposition, painting and physical vapor deposition, the vapor deposition method was selected as being preferable for preparing coatings on aluminum electrodes having a total area of 5 m/sup 2/. The electrodes were used in an experimental fission chamber designed at the Oak Ridge National Laboratory for use as a neutron flux monitor the Clinch River Breeder Reactor. Initial testing of the Ultra-High Sensitivity Fission Counter (UHSFC) indicated that a tenfold increase in sensitivity was achieved as compared to commercially available fission counters. Techniques used in vapor coating and characterizing the /sup 235/UO/sub 2/ deposits on the large-area curved substrates are described.

Adair, H.L.; Byrum, B.L.; Dailey, J.M.; Gibson, J.R.

1982-01-01T23:59:59.000Z

430

Apparent Temperature Dependence on Localized Atmospheric Water Vapor  

E-Print Network (OSTI)

Apparent Temperature Dependence on Localized Atmospheric Water Vapor Matthew Montanaroa, Carl), hence water vapor is the primary constituent of concern. The tower generates a localized water vapor, Office B108, Aiken, SC, USA ABSTRACT The atmosphere is a critical factor in remote sensing. Radiance from

Salvaggio, Carl

431

Essential role of catalyst in vapor-liquid-solid growth of compounds  

Science Journals Connector (OSTI)

The mechanism of the solidification of compound materials, such as oxide crystals, in a vapor-liquid-solid (VLS) system is investigated by model molecular dynamics simulation. A simple model for the VLS growth of a compound crystal is proposed to clarify the general mechanism of how a liquid solvent catalyzes the growth rate. We find that the nucleation process at the solid surface is responsible for limiting the growth rate, and that the solvent catalyzes the nucleation by reducing the critical nucleation size at the liquid-solid interface. Our theoretical suggestion that the ratio of the vapor-solid (VS) growth rate to the VLS growth rate strongly depends on the supply rate qualitatively agrees well with the experimental result. Finally, we simulate the entire process of VLS nanowire formation.

Masaru Suzuki; Yoshiki Hidaka; Takeshi Yanagida; Annop Klamchuen; Masaki Kanai; Tomoji Kawai; Shoichi Kai

2011-06-28T23:59:59.000Z

432

Metal Oxides  

Science Journals Connector (OSTI)

Metal oxides are the class of materials having the widest application in gas sensors. This chapter presents information related to the application of various metal oxides in gas sensors designed on different p...

Ghenadii Korotcenkov

2013-01-01T23:59:59.000Z

433

Structure, adhesion, and stability of metal/oxide and oxide/oxide interfaces  

SciTech Connect

Studies of structural, electronic, and chemical properties of metal/oxide and oxide/oxide interfaces were performed on well-defined interfaces that created by depositing ultra-thin potassium and aluminum films and their oxides onto single crystal TiO[sub 2] and NiO surfaces. Work focused on determining the structure, growth mechanisms, and morphologies of metal and oxide films as they are deposited an single crystal oxide surfaces using RHEED and atomic force microscopy probing electronic structure, bonding and chemical interactions at the interfaces using x-ray and uv photoelectron spectroscopies (XPS, UPS) and Auger electron spectroscopy (AES), and understanding factors affecting stability and reactivity of the interface regions including the role of defects and impurities. Results indicate that kinetic effects have an important influence on interface structure and composition, and they also show that defects in the oxide substrate induce new electronic states at the interface which play a major role in cation-anion bonding and interface interactions. The results establish a link between electronic and chemical bonding properties and the interface structure and morphology, which is required to successfully manipulate the interfacial properties of advanced ceramic materials.

Lad, R.J.

1992-11-01T23:59:59.000Z

434

Chemical technology division: Annual technical report 1987  

SciTech Connect

Highlights of the Chemical Technology (CMT) Division's activities during 1987 are presented. In this period, CMT conducted research and development in the following areas: (1) high-performance batteries--mainly lithium-alloy/metal sulfide and sodium/sulfur; (2) aqueous batteries (lead-acid, nickel/iron, etc.); (3) advanced fuel cells with molten carbonate or solid oxide electrolytes; (4) coal utilization, including the heat and seed recovery technology for coal-fired magnetohydrodynamics plants and the technology for fluidized-bed combustion; (5) methods for the electromagnetic continuous casting of steel sheet and for the purification of ferrous scrap; (6) methods for recovery of energy from municipal waste and techniques for treatment of hazardous organic waste; (7) nuclear technology related to a process for separating and recovering transuranic elements from nuclear waste, the recovery processes for discharged fuel and the uranium blanket in a sodium-cooled fast reactor, and waste management; and (8) physical chemistry of selected materials in environments simulating those of fission and fusion energy systems. The Division also has a program in basic chemistry research in the areas of fluid catalysis for converting small molecules to desired products; materials chemistry for liquids and vapors at high temperatures; interfacial processes of importance to corrosion science, high-temperature superconductivity, and catalysis; the thermochemistry of various minerals; and the geochemical processes responsible for trace-element migration within the earth's crust. The Division continued to be the major user of the technical support provided by the Analytical Chemistry Laboratory at ANL. 54 figs., 9 tabs.

Not Available

1988-05-01T23:59:59.000Z

435

Advanced Membrane Systems: Recovering Wasteful and Hazardous Fuel Vapors at the Gasoline Tank  

Energy.gov (U.S. Department of Energy (DOE))

Case study covering Compact Membrane Systems, Inc. and its membrane vapor processor that recovers fuel vapors from gasoline refueling.

436

Selective aerobic oxidation of hydrocarbons over supported gold catalysts.  

E-Print Network (OSTI)

??The selective oxidation of hydrocarbons is of vital importance for the production of valuable chemicals from crude oil and natural gas resources. Unfortunately, when using (more)

Hereijgers, B.P.C.

2011-01-01T23:59:59.000Z

437

WATER VAPOR IN THE PROTOPLANETARY DISK OF DG Tau  

SciTech Connect

Water is key in the evolution of protoplanetary disks and the formation of comets and icy/water planets. While high-excitation water lines originating in the hot inner disk have been detected in several T Tauri stars (TTSs), water vapor from the outer disk, where most water ice reservoirs are stored, was only reported in the nearby TTS TW Hya. We present spectrally resolved Herschel/HIFI observations of the young TTS DG Tau in the ortho- and para-water ground-state transitions at 557 and 1113 GHz. The lines show a narrow double-peaked profile, consistent with an origin in the outer disk, and are {approx}19-26 times brighter than in TW Hya. In contrast, CO and [C II] lines are dominated by emission from the envelope/outflow, which makes H{sub 2}O lines a unique tracer of the disk of DG Tau. Disk modeling with the thermo-chemical code ProDiMo indicates that the strong UV field, due to the young age and strong accretion of DG Tau, irradiates a disk upper layer at 10-90 AU from the star, heating it up to temperatures of 600 K and producing the observed bright water lines. The models suggest a disk mass of 0.015-0.1 M{sub Sun }, consistent with the estimated minimum mass of the solar nebula before planet formation, and a water reservoir of {approx}10{sup 2}-10{sup 3} Earth oceans in vapor and {approx}100 times larger in the form of ice. Hence, this detection supports the scenario of ocean delivery on terrestrial planets by the impact of icy bodies forming in the outer disk.

Podio, L.; Dougados, C.; Thi, W.-F.; Menard, F.; Pinte, C. [UJF-Grenoble 1/CNRS-INSU, Institut de Planetologie et d'Astrophysique de Grenoble (IPAG) UMR 5274, F-38041 Grenoble (France); Kamp, I.; Meijerink, R.; Spaans, M.; Aresu, G. [Kapteyn Astronomical Institute, University of Groningen, Landleven 12, 9747 AD Groningen (Netherlands); Codella, C. [INAF-Osservatorio Astrofisico di Arcetri, Largo E. Fermi 5, I-50125 Florence (Italy); Cabrit, S. [LERMA, UMR 8112 du CNRS, Observatoire de Paris, Ecole Normale Superieure, Universite Pierre et Marie Curie, Universite de Cergy-Pontoise, 61 Av. de l'Observatoire, F-75014 Paris (France); Nisini, B. [INAF-Osservatorio Astronomico di Roma, via di Frascati 33, I-00040 Monte Porzio Catone (Italy); Sandell, G. [SOFIA-USRA, NASA Ames Research Center, MS 232-12, Building N232, Rm. 146, P.O. Box 1, Moffett Field, CA 94035-0001 (United States); Williams, J. P. [Institute for Astronomy (IfA), University of Hawaii, 2680 Woodlawn Dr., Honolulu, HI 96822 (United States); Testi, L. [European Southern Observatory, Karl-Schwarzschild-Strasse 2, D-85748 Garching (Germany); Woitke, P. [SUPA, School of Physics and Astronomy, University of St. Andrews, KY16 9SS (United Kingdom)

2013-03-20T23:59:59.000Z

438

Oxidative Tritium Decontamination System  

SciTech Connect

The Princeton Plasma Physics Laboratory, Tritium Systems Group has developed and fabricated an Oxidative Tritium Decontamination System (OTDS), which is designed to reduce tritium surface contamination on various components and items. The system is configured to introduce gaseous ozone into a reaction chamber containing tritiated items that require a reduction in tritium surface contamination. Tritium surface contamination (on components and items in the reaction chamber) is removed by chemically reacting elemental tritium to tritium oxide via oxidation, while purging the reaction chamber effluent to a gas holding tank or negative pressure HVAC system. Implementing specific concentrations of ozone along with catalytic parameters, the system is able to significantly reduce surface tritium contamination on an assortment of expendable and non-expendable items. This paper will present the results of various experimentation involving employment of this system.

Charles A. Gentile; John J. Parker; Gregory L. Guttadora; Lloyd P. Ciebiera

2002-02-11T23:59:59.000Z

439

Precision micro drilling with copper vapor lasers  

SciTech Connect

The authors have developed a copper vapor laser based micro machining system using advanced beam quality control and precision wavefront tilting technologies. Micro drilling has been demonstrated through percussion drilling and trepanning using this system. With a 30 W copper vapor laser running at multi-kHz pulse repetition frequency, straight parallel holes with size varying from 500 microns to less than 25 microns and with aspect ratio up to 1:40 have been consistently drilled on a variety of metals with good quality. For precision trepanned holes, the hole-to-hole size variation is typically within 1% of its diameter. Hole entrance and exit are both well defined with dimension error less than a few microns. Materialography of sectioned holes shows little (sub-micron scale) recast layer and heat affected zone with surface roughness within 1--2 microns.

Chang, J.J.; Martinez, M.W.; Warner, B.E.; Dragon, E.P.; Huete, G.; Solarski, M.E.

1994-09-02T23:59:59.000Z

440

The catalytic oxidation of propane  

E-Print Network (OSTI)

THE CATALYTIC OXIDATION OP PROPANE A Thesis By Charles Frederick Sandersont * * June 1949 Approval as to style and content recommended: Head of the Department of Chemical Engineering THE CATALYTICi OXIDATTON OF PROPANE A Thesis By Charles... Frederick ;Sandersonit * June 1949 THE CATALYTIC OXIDATION OP PROPANE A Thesis Submitted to the Faculty of the Agricultural and Mechanical College of Texas in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy Major...

Sanderson, Charles Frederick

2013-10-04T23:59:59.000Z

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Copper vapor laser modular packaging assembly  

DOE Patents (OSTI)

A modularized packaging arrangement for one or more copper vapor lasers and associated equipment is disclosed herein. This arrangement includes a single housing which contains the laser or lasers and all their associated equipment except power, water and neon, and means for bringing power, water, and neon which are necessary to the operation of the lasers into the container for use by the laser or lasers and their associated equipment.

Alger, Terry W. (Tracy, CA); Ault, Earl R. (Dublin, CA); Moses, Edward I. (Castro Valley, CA)

1992-01-01T23:59:59.000Z

442

Solubility properties of siloxane polymers for chemical sensors  

SciTech Connect

This paper discusses the factors governing the sorption of vapors by organic polymers. The principles have been applied in the past for designing and selecting polymers for acoustic wave sensors; however they apply equally well to sorption of vapors by polymers used on optical chemical sensors. A set of solvation parameters (a table is presented for various organic vapors) have been developed that describe the particular solubility properties of individual solute molecules; they are used in linear solvation energy relationships (LSER) that model the sorption process. LSER coefficients are tabulated for five polysiloxanes; so are individual interaction terms for each of the 5 polymers. Dispersion interactions play a major role in determining overall partition coefficients; the log L{sup 16} (gas-liquid partition coefficient of solute on hexadecane) value of vapors are important in determining overall sorption. For the detection of basic vapors such as organophosphates, a hydrogen-bond acidic polymers will be most effective at sorbing them. Currently, fiber optic sensors are being developed where the cladding serves as a sorbent layer to collect and concentrate analyte vapors, which will be detected and identified spectroscopically. These solubility models will be used to design the polymers for the cladding for particular vapors.

Grate, J.W. [Pacific Northwest Lab., Richland, WA (United States); Abraham, M.H. [University College, London (United Kingdom)

1995-05-01T23:59:59.000Z

443

Effect of aluminizing of Cr-containing ferritic alloys on the seal strength of a novel high-temperature solid oxide fuel cell sealing glass  

SciTech Connect

A novel high-temperature alkaline-earth silicate sealing glass was developed for solid oxide fuel cell (SOFC) applications. The glass was used to join two metallic coupons of Cr-containing ferritic stainless steel for seal strength evaluation. In previous work, SrCrO4 was found to form along the glass/steel interface, which led to severe strength degradation. In the present study, aluminization of the steel surface was investigated as a remedy to minimize or prevent the strontium chromate formation. Three different processes for aluminization were evaluated with Crofer22APU stainless steel: pack cementation, vapor phase deposition, and aerosol spraying. It was found that pack cementation resulted in a rough surface with occasional cracks in the Al-diffused region. Vapor phase deposition yielded a smoother surface, but the resulting high Al content increased the coefficient of thermal expansion (CTE), resulting in failure of joined coupons. Aerosol spraying of an Al-containing salt resulted in formation of a thin aluminum oxide layer without any surface damage. The room temperature seal strength was evaluated in the as-fired state and in environmentally aged conditions. In contrast to earlier results with uncoated Crofer22APU, the aluminized samples showed no strength degradation even for samples aged in air. Interfacial and chemical compatibility was also investigated. The results showed aluminization to be a viable candidate approach to minimize undesirable chromate formation between alkaline earth silicate sealing glass and Cr-containing interconnect alloys for SOFC applications.

Chou, Y. S.; Stevenson, Jeffry W.; Singh, Prabhakar

2008-12-01T23:59:59.000Z

444

Chemical heat pump and chemical energy storage system  

DOE Patents (OSTI)

A chemical heat pump and storage system employs sulfuric acid and water. In one form, the system includes a generator and condenser, an evaporator and absorber, aqueous acid solution storage and water storage. During a charging cycle, heat is provided to the generator from a heat source to concentrate the acid solution while heat is removed from the condenser to condense the water vapor produced in the generator. Water is then stored in the storage tank. Heat is thus stored in the form of chemical energy in the concentrated acid. The heat removed from the water vapor can be supplied to a heat load of proper temperature or can be rejected. During a discharge cycle, water in the evaporator is supplied with heat to generate water vapor, which is transmitted to the absorber where it is condensed and absorbed into the concentrated acid. Both heats of dilution and condensation of water are removed from the thus diluted acid. During the discharge cycle the system functions as a heat pump in which heat is added to the system at a low temperature and removed from the system at a high temperature. The diluted acid is stored in an acid storage tank or is routed directly to the generator for reconcentration. The generator, condenser, evaporator, and absorber all are operated under pressure conditions specified by the desired temperature levels for a given application. The storage tanks, however, can be maintained at or near ambient pressure conditions. In another form, the heat pump system is employed to provide usable heat from waste process heat by upgrading the temperature of the waste heat.

Clark, Edward C. (Woodinville, WA); Huxtable, Douglas D. (Bothell, WA)

1985-08-06T23:59:59.000Z

445

Chemical deposition methods using supercritical fluid solutions  

DOE Patents (OSTI)

A method for depositing a film of a desired material on a substrate comprises dissolving at least one reagent in a supercritical fluid comprising at least one solvent. Either the reagent is capable of reacting with or is a precursor of a compound capable of reacting with the solvent to form the desired product, or at least one additional reagent is included in the supercritical solution and is capable of reacting with or is a precursor of a compound capable of reacting with the first reagent or with a compound derived from the first reagent to form the desired material. The supercritical solution is expanded to produce a vapor or aerosol and a chemical reaction is induced in the vapor or aerosol so that a film of the desired material resulting from the chemical reaction is deposited on the substrate surface. In an alternate embodiment, the supercritical solution containing at least one reagent is expanded to produce a vapor or aerosol which is then mixed with a gas containing at least one additional reagent. A chemical reaction is induced in the resulting mixture so that a film of the desired material is deposited.

Sievers, Robert E. (Boulder, CO); Hansen, Brian N. (Boulder, CO)

1990-01-01T23:59:59.000Z

446

CHEMICAL MARKETING  

Science Journals Connector (OSTI)

CHEMICAL MARKETING ... The reason, I believe, is that the chemical industry has been blind (until very recently) to the need for paying attention to marketing. ... Its marketing needs are now like those of a matureno longer a growingindustry. ...

1960-12-19T23:59:59.000Z

447

APPENDIX B CHEMICAL STORAGE SEGREGATION SCHEME Developing safe storage practices for laboratory chemicals is not always easy and often  

E-Print Network (OSTI)

/or ventilated gas storage cabinet. Methane, Acetylene, Hydrogen Oxidizing and toxic compressed gases, oxidizing68 APPENDIX B ­ CHEMICAL STORAGE SEGREGATION SCHEME Developing safe storage practices. Your ability to develop a safe storage system will depend on your knowledge of chemicals or your

448

Chemical Scientist Hendrik Bluhm Receives Bessel Research Award  

NLE Websites -- All DOE Office Websites (Extended Search)

Chemical Scientist Hendrik Bluhm Chemical Scientist Hendrik Bluhm Receives Bessel Research Award Chemical Scientist Hendrik Bluhm Receives Bessel Research Award Print Friday, 24 May 2013 00:00 Hendrik Bluhm of the Lab's Chemical Sciences Division is the recipient of the Friedrich Wilhelm Bessel Research award, bestowed by Germany's Alexander von Humboldt Foundation. Award winners are honored for their outstanding research record and invited to spend a period of up to one year cooperating on a long-term research project with specialist colleagues at a research institution in Germany. Bluhm works on beamline 11.0.2 at the Advanced Light Source, investigating solid/vapor and liquid/vapor interfaces under realistic conditions of pressure and temperature, using photoelectron spectroscopy and scanning probe microscopy

449

ARM - Field Campaign - Fall 1997 Water Vapor IOP  

NLE Websites -- All DOE Office Websites (Extended Search)

Water Vapor IOP Water Vapor IOP Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : Fall 1997 Water Vapor IOP 1997.09.15 - 1997.10.05 Lead Scientist : Henry Revercomb For data sets, see below. Summary The Water Vapor IOP was conducted as a follow-up to a predecessor IOP on water vapor held in September 1996. This IOP relied heavily on both ground-based guest and CART instrumentation and in-situ aircraft and tethered sonde/kite measurements. Primary operational hours were from 6 p.m. Central until at least midnight, with aircraft support normally from about 9 p.m. until midnight when available. However, many daytime measurements were made to support this IOP. The first Water Vapor IOP primarily concentrated on the atmosphere's lowest

450

G-Band Vapor Radiometer Profiler (GVRP) Handbook  

SciTech Connect

The G-Band Vapor Radiometer Profiler (GVRP) provides time-series measurements of brightness temperatures from 15 channels between 170 and 183.310 GHz. Atmospheric emission in this spectral region is primarily due to water vapor, with some influence from liquid water. Channels between 170.0 and 176.0 GHz are particularly sensitive to the presence of liquid water. The sensitivity to water vapor of the 183.31-GHz line is approximately 30 times higher than at the frequencies of the two-channel microwave radiometer (MWR) for a precipitable water vapor (PWV) amount of less than 2.5 mm. Measurements from the GVRP instrument are therefore especially useful during low-humidity conditions (PWV < 5 mm). In addition to integrated water vapor and liquid water, the GVRP can provide low-resolution vertical profiles of water vapor in very dry conditions.

Caddeau, MP

2010-06-23T23:59:59.000Z

451

Unfamiliar oxidation states and their stabilization  

E-Print Network (OSTI)

ferrate formation. Oxidation of copper(II) hydroxide in alkaline solution with sodium hydroperoxide, Na.OOH, apparently gives copper (III) oxide.8 Determination of the voltage-current curve for a silver anode in sodium hydroxide solution gives breaks... of a knowledge of the chemical prop erties of the substance in question is made apparent by the following illustration: a compound containing silver and oxygen in equal atomic proportions may be made by the oxidation of unipositive silver...

Kleinberg, Jacob

1950-01-01T23:59:59.000Z

452

Vapor port and groundwater sampling well  

DOE Patents (OSTI)

A method and apparatus has been developed for combining groundwater monitoring wells with unsaturated-zone vapor sampling ports. The apparatus allows concurrent monitoring of both the unsaturated and the saturated zone from the same well at contaminated areas. The innovative well design allows for concurrent sampling of groundwater and volatile organic compounds (VOCs) in the vadose (unsaturated) zone from a single well, saving considerable time and money. The sample tubes are banded to the outer well casing during installation of the well casing.

Hubbell, Joel M. (Idaho Falls, ID); Wylie, Allan H. (Idaho Falls, ID)

1996-01-01T23:59:59.000Z

453

Storing images in warm atomic vapor  

E-Print Network (OSTI)

Reversible and coherent storage of light in atomic medium is a key-stone of future quantum information applications. In this work, arbitrary two-dimensional images are slowed and stored in warm atomic vapor for up to 30 $\\mu$s, utilizing electromagnetically induced transparency. Both the intensity and the phase patterns of the optical field are maintained. The main limitation on the storage resolution and duration is found to be the diffusion of atoms. A techniqueanalogous to phase-shift lithography is employed to diminish the effect of diffusion on the visibility of the reconstructed image.

M. Shuker; O. Firstenberg; R. Pugatch; A. Ron; N. Davidson

2008-06-17T23:59:59.000Z

454

Thermal conversion of biomass to valuable fuels, chemical feedstocks and chemicals  

DOE Patents (OSTI)

A continuous process for the conversion of biomass to form a chemical feedstock is described. The biomass and an exogenous metal oxide, preferably calcium oxide, or metal oxide precursor are continuously fed into a reaction chamber that is operated at a temperature of at least 1400.degree. C. to form reaction products including metal carbide. The metal oxide or metal oxide precursor is capable of forming a hydrolizable metal carbide. The reaction products are quenched to a temperature of 800.degree. C. or less. The resulting metal carbide is separated from the reaction products or, alternatively, when quenched with water, hydolyzed to provide a recoverable hydrocarbon gas feedstock.

Peters, William A. (Lexington, MA); Howard, Jack B. (Winchester, MA); Modestino, Anthony J. (Hanson, MA); Vogel, Fredreric (Villigen PSI, CH); Steffin, Carsten R. (Herne, DE)

2009-02-24T23:59:59.000Z

455

Recovery of benzene in an organic vapor monitor  

E-Print Network (OSTI)

solid adsorbents available (silica gel, activated alumina, etc. ), activated charcoal is most frequently utilized. Activated charcoal has retentivity for sorbed vapors several times that of silica gel and it displays a selectivity for organic vapors... (diffusion rate) of the vapor molecules to the sur- face of the adsorbent. The adsorption process determine how effective the adsorbent collects and holds the contam- inant on the surface of the activated charcoal. Recovery of the contaminant from...

Krenek, Gregory Joel

2012-06-07T23:59:59.000Z

456

Chemical Kinetics for Modeling Silicon Epitaxy from Chlorosilanes  

SciTech Connect

A reaction mechanism has been developed that describes the gas-phas 0971 and surface reactions involved in the chemical vapor deposition of Si from chlorosilanes. Good agreement with deposition rate data from a single wafer reactor with no wafer rotation has been attained over a range of gas mixtures, total flow rates, and reactor temperatures.

Balakrishna, A.; Chacin, J.M.; Comita, P.B.; Haas, B.; Ho, P.; Thilderkvist, A.

1998-11-24T23:59:59.000Z

457

Mercury Vapor At Haleakala Volcano Area (Thomas, 1986) | Open Energy  

Open Energy Info (EERE)

Mercury Vapor At Haleakala Volcano Area (Thomas, 1986) Mercury Vapor At Haleakala Volcano Area (Thomas, 1986) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Haleakala Volcano Area (Thomas, 1986) Exploration Activity Details Location Haleakala Volcano Area Exploration Technique Mercury Vapor Activity Date Usefulness not indicated DOE-funding Unknown Notes The field survey program on the northwest rift zone consisted of soil mercury and radon emanometry surveys, groundwater temperature and chemistry studies, Schlumberger resistivity soundings and self-potential profiles. Geophysical and geochemical surveys along this rift (southwest) were limited by difficult field conditions and access limitations. The geophysical program consisted of one Schlumberger sounding, one

458

Mercury Vapor At Vale Hot Springs Area (Varekamp & Buseck, 1983...  

Open Energy Info (EERE)

Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Vale Hot Springs Area (Varekamp & Buseck, 1983) Exploration Activity Details...

459

Mercury Vapor At Breitenbush Hot Springs Area (Varekamp & Buseck...  

Open Energy Info (EERE)

Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Breitenbush Hot Springs Area (Varekamp & Buseck, 1983) Exploration Activity...

460

Mercury Vapor At Mickey Hot Springs Area (Varekamp & Buseck,...  

Open Energy Info (EERE)

Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Mickey Hot Springs Area (Varekamp & Buseck, 1983) Exploration Activity...

Note: This page contains sample records for the topic "oxide chemical vapor" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Mercury Vapor At Desert Peak Area (Varekamp & Buseck, 1983) ...  

Open Energy Info (EERE)

Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Desert Peak Area (Varekamp & Buseck, 1983) Exploration Activity Details...

462

Mercury Vapor At Socorro Mountain Area (Kooten, 1987) | Open...  

Open Energy Info (EERE)

Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Socorro Mountain Area (Kooten, 1987) Exploration Activity Details Location...

463

Mercury Vapor At Lassen Volcanic National Park Area (Varekamp...  

Open Energy Info (EERE)

Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Mercury Vapor At Lassen Volcanic National Park Area (Varekamp & Buseck, 1983) Exploration...

464

Thermal Performance of a Double-Tube Type Lng Vaporizer  

Science Journals Connector (OSTI)

This report concerns the confirmed test results and method of analysis of the thermal performance of a double-tube type LNG vaporizer (DTV). The DTV is a...

Y. Miyata; T. Miura; S. Kasahara; H. Shohtani

1994-01-01T23:59:59.000Z

465

Optimal Control of Vapor Extraction of Heavy Oil.  

E-Print Network (OSTI)

??Vapor extraction (Vapex) process is an emerging technology for viscous oil recovery that has gained much attention in the oil industry. However, the oil production (more)

Muhamad, Hameed (Author)

2012-01-01T23:59:59.000Z

466

Geographic Information System At Cove Fort Area - Vapor (Nash...  

Open Energy Info (EERE)

navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Geographic Information System At Cove Fort Area - Vapor (Nash, Et Al., 2002) Exploration Activity Details...

467

Raman Lidar Measurements of Aerosols and Water Vapor During the...  

NLE Websites -- All DOE Office Websites (Extended Search)

modifications reduced but could not eliminate these adverse effects. The Raman lidar water vapor (aerosol extinction) measurements produced by these modified algorithms were,...

468

Thermal Gradient Holes At Cove Fort Area - Vapor (Warpinski,...  

Open Energy Info (EERE)

Warpinski, Et Al., 2004) Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: Thermal Gradient Holes At Cove Fort Area - Vapor (Warpinski, Et Al.,...

469

Ground Magnetics At Cove Fort Area - Vapor (Warpinski, Et Al...  

Open Energy Info (EERE)

Vapor (Warpinski, Et Al., 2004) Exploration Activity Details Location Cove Fort Geothermal Area Exploration Technique Ground Magnetics Activity Date Usefulness useful DOE-funding...

470

Spray structures and vaporizing characteristics of a GDI fuel spray  

Science Journals Connector (OSTI)

The spray structures and distribution characteristics of liquid and vapor phases in non-evaporating and evaporating Gasoline Direct Injection (GDI) fuel sprays were investigated using Laser Induced...

Dong-Seok Choi; Gyung-Min Choi; Duck-Jool Kim

2002-07-01T23:59:59.000Z

471

A description of the vapor phase in the lithium thionyl chloride battery  

E-Print Network (OSTI)

A DESCRIPTION OF TIIE YAPOP, PHASE IN THF. LITHIUM THIONYI. CHLORIDE BATTERY A Thesis by RODOLFO MORALES, JR. Submitted to the Graduate College of Texas AEzM University in partial fulfrHment of the requirement for the degree oi' MASTER... OF SCIENCE August 1988 Major Subject: Chemical Engineering A DESCRIPTION OF THE VAPOR PHASE IN THE LITHIUM THIONYL CHLORIDE BATTERY A Thesis bv RODOLFO 'vIORALES, JR. Approved as to style and content by: Ralph E. White (Chairman of Committee) James...

Morales, Rodolfo

1988-01-01T23:59:59.000Z

472

Data Quality Issues Associated with the Presence of Chlorinated Hydrocarbons in Tank Vapor Samples  

SciTech Connect

Characterization data for the gases and vapors in the Hanford Site high-level radioactive waste tank headspaces are compiled and a