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1

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM OPTO SEMICONDUCTORS  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5 14:37 FR IPL DOE CH 630 252 2779 TO RGCP-HQ P.02/04 5 14:37 FR IPL DOE CH 630 252 2779 TO RGCP-HQ P.02/04 * * STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM OPTO SEMICONDUCTORS FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER DOE CONTRACT NO. DE-FC26-05NT42341, SUBCONTRACT QZ001; W(A)-05-017, CH-1280 The Petitioner, OSRAM Opto Semiconductor (Osram) was awarded a subcontract under this cooperative agreement for the performance of work entitled, "Scaling Up KiloLumen Solid- State Lighting Exceeding 100 LPW via Remote Phosphor." The cooperative agreement was awarded to Light Prescriptions Innovators, LLC (LPI). The purpose of the cooperative agreement is to develop a new white light emitting diode (LED) light source that emits 1000 lumens with an efficacy exceeding 100 lumens per watt (LPW). The new white LED light source will use multiple

2

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM OPTO SEMICONDUCTORS, INC. FOR AN ADVANCE WAIVER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

OSRAM OPTO SEMICONDUCTORS, INC. FOR AN ADVANCE WAIVER OSRAM OPTO SEMICONDUCTORS, INC. FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE-FC26-04NT41947; W(A)-04-021, CH-1190 The Petitioner, Osram Opto Semiconductors (Osram), was awarded this cooperative agreement for the performance of work entitled, "Polymer OLED White Light Development Program." In this program, Osram will develop, fabricate, and fully characterize a 12-inch square OLED (Organic Light Emitting Diode) white light prototype. The prototype will be based on use of multiple discrete 3-inch square white light devices fabricated on glass substrates. A broadband light-emitting co-polymer for the generation of white light, from either a single large area emitting film, or from a relatively small number of segmented emitting films will be used. An alternate

3

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM OPTO SEMICONDUCTORS  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

LLC (LPI). The purpose of the cooperative agreement is to develop a new white light emitting diode (LED) light source that emits 1000 lumens with an efficacy exceeding 100 lumens...

4

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM OPTO SEMICONDUCTORS...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

will develop, fabricate, and fully characterize a 12-inch square OLED (Organic Light Emitting Diode) white light prototype. The prototype will be based on use of multiple discrete...

5

Osram Sylvania | Open Energy Information  

Open Energy Info (EERE)

Osram Sylvania Osram Sylvania Jump to: navigation, search Name Osram Sylvania Address 100 Endicott Street Place Danvers, Massachusetts Zip 01923 Sector Efficiency Product Lighting and LED innovations Website http://www.sylvania.com/ Coordinates 42.547537°, -70.931449° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.547537,"lon":-70.931449,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

6

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM SYLVANIA DEVELOPMENT, INC. FOR AN ADVANCE WAIVER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1 2004 10:32 FR IPL DOE CH 630 252 2779 TO AGCP-HQ P.02/04 1 2004 10:32 FR IPL DOE CH 630 252 2779 TO AGCP-HQ P.02/04 * * STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM SYLVANIA DEVELOPMENT, INC. FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE-FC26-04NT42274; SUBCONTRACT NO. QZ001; W(A)-04-073; CH-1251 The Petitioner, Osram Sylvania Development, Inc. (Osram), was awarded subcontract for the performance of work entitled, "Development of White-Light Emitting Active Layers in Nitride Based Heterostructures for Phosphorless Solid State Lighting." In this program, Osram will explore the feasibility of new LED architecture for white light emission using thin films of nitride- based luminescent semiconductor alloys of GaN, Al N, and InN doped with suitably chosen

7

Vehicle Technologies Office: Workplace Charging Challenge Partner: OSRAM  

NLE Websites -- All DOE Office Websites (Extended Search)

OSRAM SYLVANIA to someone by E-mail OSRAM SYLVANIA to someone by E-mail Share Vehicle Technologies Office: Workplace Charging Challenge Partner: OSRAM SYLVANIA on Facebook Tweet about Vehicle Technologies Office: Workplace Charging Challenge Partner: OSRAM SYLVANIA on Twitter Bookmark Vehicle Technologies Office: Workplace Charging Challenge Partner: OSRAM SYLVANIA on Google Bookmark Vehicle Technologies Office: Workplace Charging Challenge Partner: OSRAM SYLVANIA on Delicious Rank Vehicle Technologies Office: Workplace Charging Challenge Partner: OSRAM SYLVANIA on Digg Find More places to share Vehicle Technologies Office: Workplace Charging Challenge Partner: OSRAM SYLVANIA on AddThis.com... Goals Research & Development Testing and Analysis Workplace Charging Partners Ambassadors Resources

8

Solid-State Lighting Issue 12: Selected Business & Technology...  

NLE Websites -- All DOE Office Websites (Extended Search)

News. Osram Opto Semiconductors white LED lights were on display inthe 2002 Lincoln Navigator on display at the 2002 Chicago Auto Show. Osrams white Power TOPLED,...

9

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM SYLVANIA DEVELOPMENT...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Emitting Active Layers in Nitride Based Heterostructures for Phosphorless Solid State Lighting." In this program, Osram will explore the feasibility of new LED architecture for...

10

Martin Moeck  

NLE Websites -- All DOE Office Websites (Extended Search)

Moeck Senior Key Expert Osram Opto Semiconductors, Germany martin.moeck@osram-os.com This speaker was a visiting speaker who delivered a talk or talks on the date(s) shown at the...

11

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM SYLVANIA FOR AN ADVANCE WAIVER OF DOMESTIC AND  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

OSRAM SYLVANIA FOR AN ADVANCE WAIVER OF DOMESTIC AND OSRAM SYLVANIA FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER DOE CONTRACT NO. DE-EE0000611; W(A)-09- 067, CH-1538 The Petitioner, Osram Sylvania (Osram) was awarded this cooperative agreement for the performance of work entitled, "Highly Efficient Small Form Factor LED Retrofit Lamp." According to its response to question 2, the work under this agreement will develop Osram's laboratory-proven high optical efficiency white light engine into a complete MR 16 retrofit prototype suitable for commercial production. The high system efficiency is mostly due to the remote phosphor configuration and the ceramic phosphor substrate material's unique physical properties. The ceramic provides low optical loss, high thermal conductivity, and acts as a diffuser that obscures

12

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM SYLVANIA PRODUCTS, INC. FOR AN ADVANCE  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

OSRAM SYLVANIA PRODUCTS, INC. FOR AN ADVANCE OSRAM SYLVANIA PRODUCTS, INC. FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE GRANT NO. DE-FG36-05GO85042 ENTITLED "TUNGSTEN CATHODE FUEL CELL CATALYST PROJECT"; W(A)-05-031; CH-1300 As set out in the attached waiver petitioner, the Petitioner, OSRAM SYLVANIA Products, Inc., has requested an advance waiver of domestic and foreign patent rights for all subject inventions made by its employees under the above-identified award. Referring to item 2 of the waiver petition, the purpose of this award relates generally to fuel cells and specifically to the design, fabrication and evaluation of the cathodic, catalytic activity of a tungsten-based (platinum-free) material in a prototype membrane electrode assembly at 1 / 1 5 t h the output of a comparable platinum containing unit to

13

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM SYLVANIA FOR AN ADVANCE WAIVER OF DOMESTIC AND  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3241; W(A)- 3241; W(A)- 2010-029, CH-1564 The Petitioner, Osram Sylvania (Osram) was awarded this cooperative agreement for the performance of work entitled, "Recovery Act - High Flux Commercial Illumination Solution with Intelligent Controls." According to its response to question 2, the work under this agreement will develop three separate sub-systems: a white light engine, a power supply, and a control system, and integrate them into a complete linear fluorescent retrofit prototype suitable for commercial production. The work will be divided into two halves by project years. The first year work will focus on system design and optimization while the second year will focus on product development and qualification. The total estimated cost of the contract is $1,731,455 with Osram providing a 20% cost-

14

OptoElectronix Inc | Open Energy Information  

Open Energy Info (EERE)

OptoElectronix is a San Jose-headquartered developer and manufacturer of Light Emitting Diode (LED) products. References OptoElectronix, Inc.1 LinkedIn Connections...

15

Excellence Opto: Order (2013-CE-49002)  

Energy.gov (U.S. Department of Energy (DOE))

DOE ordered Excellence Opto, Inc. to pay a $8,000 civil penalty after finding Excellence Opto had failed to certify that certain models of traffic signal modules and pedestrian modules comply with the applicable energy conservation standards.

16

Exploring and enhancing conductivity in semiconductor nanoparticle films  

E-Print Network (OSTI)

Semiconductor nanocrystals (NCs) are a promising material for use in opto-electronic devices as their optical properties tune with particle size. NCs formed via colloidal synthesis are suspended in solution by the organic ...

Porter, Venda Jane

2007-01-01T23:59:59.000Z

17

Opto Technology Inc | Open Energy Information  

Open Energy Info (EERE)

Opto Technology Inc Opto Technology Inc Jump to: navigation, search Name Opto Technology Inc Place Wheeling, Illinois Zip 60900 Product US-based subsidiary of PerkinElmer which designs and develops LED based light sources. Coordinates 40.063965°, -80.721424° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.063965,"lon":-80.721424,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

18

Opto-Electrical Cooling of Polar Molecules  

E-Print Network (OSTI)

We present an opto-electrical cooling scheme for polar molecules based on a Sisyphus-type cooling cycle in suitably tailored electric trapping fields. Dissipation is provided by spontaneous vibrational decay in a closed level scheme found in symmetric-top rotors comprising six low-field-seeking rovibrational states. A generic trap design is presented. Suitable molecules are identified with vibrational decay rates on the order of 100Hz. A simulation of the cooling process shows that the molecular temperature can be reduced from 1K to 1mK in approximately 10s. The molecules remain electrically trapped during this time, indicating that the ultracold regime can be reached in an experimentally feasible scheme.

M. Zeppenfeld; M. Motsch; P. W. H. Pinkse; G. Rempe

2009-04-27T23:59:59.000Z

19

Opto-Electrical Cooling of Polar Molecules  

E-Print Network (OSTI)

We present an opto-electrical cooling scheme for polar molecules based on a Sisyphus-type cooling cycle in suitably tailored trapping electric fields. Dissipation is provided by spontaneous infrared decay in a closed level scheme found in symmetric-top rotors comprising six low-field-seeking rovibrational states. A generic trap design is presented. Suitable molecules are identified with vibrational decay rates on the order of 100Hz. A simulation of the cooling process shows that the molecular temperature can be reduced from 1K to 1mK in approximately 10s. The molecules remain electrically trapped during this time, indicating that the ultracold regime can be reached in an experimentally feasible scheme.

Zeppenfeld, M; Pinkse, P W H; Rempe, G

2009-01-01T23:59:59.000Z

20

Microsoft Word - FOR WEB - Excellence Opto 49002 NPCP.docx  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Excellence Opto, Inc. Excellence Opto, Inc. (traffic signal modules and pedestrian modules) ) ) ) ) ) Case Number: 2013-CE-49002 NOTICE OF PROPOSED CIVIL PENALTY Date issued: August 5, 2013 Number of alleged violations: 2,555 (7 basic models; 365 days) Maximum possible assessment: $511,000 Proposed civil penalty: $51,100 The U.S. Department of Energy ("DOE") Office of the General Counsel, Office of Enforcement, alleges that Excellence Opto, Inc. ("EOI") has violated certain provisions of the Energy Policy and Conservation Act, 42 U.S.C. § 6291 et seq. ("the Act"), and 10 C.F.R. §§ 429.12 and 429.49. Specifically, DOE alleges: 1. EOI has manufactured 1 a variety of traffic signal modules including basic models TRV-R08E4-J2, TRV-R12EG-A, TRV-G12EG-B2, TRV-R08EG-J, and

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Microsoft Word - FOR WEB - Excellence Opto 49002 CA.docx  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Excellence Opto, Inc., Excellence Opto, Inc., Respondent ) ) ) ) ) ) Case Number: 2013-CE-49002 ORDER By the General Counsel, U.S. Department of Energy: 1. In this Order, I adopt the attached Compromise Agreement entered into between the U.S. Department of Energy ("DOE") and Excellence Opto, Inc. ("Respondent"). The Compromise Agreement resolves the case initiated to pursue a civil penalty for violations of the compliance certification requirements located at 10 C.F.R. Part 429. 2. DOE and Respondent have negotiated the terms of the Compromise Agreement that resolves this matter. A copy of the Compromise Agreement is attached hereto and incorporated by reference. 3. After reviewing the terms of the Compromise Agreement and evaluating the facts before me,

22

Opto-Electronics in Large Array Gas Detector Systems  

E-Print Network (OSTI)

Large array gas detector systems are used in particle and nuclear physics experiments involving high-energy nucleon-nucleon and heavy-ion collisions. We have observed that in large array gas detector systems the momentary discharges inside the detector cells result in slowdown of High Voltage conditioning and possible hindrances in signal processing. We have explored the opto-electronic devices like the opto-coupler, optical fibre and signal processing circuit, which provide successful monitoring procedures and preventive measures to overcome the challenges produced in such complex detector systems.

M. R. Dutta Majumdar; Debasish Das; Tapan K. Nayak

2005-12-23T23:59:59.000Z

23

Semiconductors News  

Science Conference Proceedings (OSTI)

... Nhan Nguyen demonstrates how he performs optical measurements on a graphene-insulator-semiconductor sample structure. ...

2010-05-24T23:59:59.000Z

24

Introducing OPTO : Portal for Optical Communities in Indonesia  

E-Print Network (OSTI)

Since January 1, 2005 we have launched "OPTO" Portal, a website dedicated to optical communities in Indonesia. The address of this portal is http://www.opto.lipi.go.id and is self-supporting managed and not for commercial purposes. Our aims in launching this portal are to benefit Internet facility in increasing the communities' scientific activity; to provide an online reference in Indonesian language for optics-based science and technology subjects; as well as to pioneer the communities' online activities with real impacts and benefits for our society. We will describe in the paper the features of this portal that can be utilized by all individuals or members of optical communities to store and share information and to build networks or partnership as well. We realized that this portal is still not popular and most of our aims are still not reached. This conference should be a good place for all of us to collaborate to properly utilize this portal for the advantages to the optical communities in Indonesia an...

Waluyo, T B

2007-01-01T23:59:59.000Z

25

Semiconductor Analytics  

Science Conference Proceedings (OSTI)

... LED Lighting and Displays Solar PV Why Semiconductors? ... Potential Comments Solar PV 20.4 25-30% Politically driven. BP disaster will help. ...

2011-10-03T23:59:59.000Z

26

A channel design using single, semiconductor nanocrystals for ecient (opto)electronic devices  

E-Print Network (OSTI)

on cathodes distinct from those colonizing the same graphite material, suspended in the aerobic water. If microbial electrosynthesis can be coupled with photovolatics on a large scale, it offers the possibility-based approach because: (i) photovolatics are orders of magnitude more effective in capturing solar energy than

Columbia University

27

An opto-fluidic architecture for image-based sorting of biological cells and particles  

E-Print Network (OSTI)

The present state of technology provides limited practical options for viably sorting and capturing biological cells based on visual information. This thesis presents a novel opto-fluidic architecture which enables potentially ...

Kova?, Joseph (Joseph R.)

2007-01-01T23:59:59.000Z

28

Release strategies for making transferable semiconductor structures, devices and device components  

DOE Patents (OSTI)

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Rogers, John A. (Champaign, IL); Nuzzo, Ralph G. (Champaign, IL); Meitl, Matthew (Raleigh, NC); Ko, Heung Cho (Urbana, IL); Yoon, Jongseung (Urbana, IL); Menard, Etienne (Durham, NC); Baca, Alfred J. (Urbana, IL)

2011-04-26T23:59:59.000Z

29

Photoelectrosynthesis at semiconductor electrodes  

DOE Green Energy (OSTI)

The general principles of photoelectrochemistry and photoelectrosynthesis are reviewed and some new developments in photoelectrosynthesis are discussed. Topics include energetics of semiconductor-electrolyte interfaces(band-edge unpinning); hot carrier injection at illuminated semiconductor-electrolyte junctions; derivatized semiconductor electrodes; particulate photoelectrochemical systems; layered compounds and other new materials; and dye sensitization. (WHK)

Nozik, A. J.

1980-12-01T23:59:59.000Z

30

Spire Semiconductor formerly Bandwidth Semiconductor LLC | Open Energy  

Open Energy Info (EERE)

Semiconductor formerly Bandwidth Semiconductor LLC Semiconductor formerly Bandwidth Semiconductor LLC Jump to: navigation, search Name Spire Semiconductor (formerly Bandwidth Semiconductor LLC) Place Hudson, New Hampshire Zip 3051 Product Spire-owned US-based manufacturer of gallium-arsenide (GaAs) cells; offers design and manufacturing capabilities of concentrator cells. References Spire Semiconductor (formerly Bandwidth Semiconductor LLC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Spire Semiconductor (formerly Bandwidth Semiconductor LLC) is a company located in Hudson, New Hampshire . References ↑ "Spire Semiconductor (formerly Bandwidth Semiconductor LLC)" Retrieved from "http://en.openei.org/w/index.php?title=Spire_Semiconductor_formerly_Bandwidth_Semiconductor_LLC&oldid=351621"

31

Unitary lens semiconductor device  

DOE Patents (OSTI)

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Lear, Kevin L. (Albuquerque, NM)

1997-01-01T23:59:59.000Z

32

Quantum memories with electrically controlled storage and retrieval in an opto- and electro-mechanical cavity  

E-Print Network (OSTI)

We propose a novel scheme to realize electrically controlled quantum memories in the opto- and electro-mechanical (OEM) cavity. Combining this OEM cavity with the mechanism of Electromagnetically Induced Transparency (EIT) we find that the quantum interference, arising from the two optical transitions of the $\\Lambda$ type three-level atomic ensembles, can be manipulated electrically. Numerical calculations show that the probe photon state can be well stored into the atomic spin state by sending an electric current pulse and retrieved with time-reverse symmetry by sending the other current pulse with opposite direction. The quantum interference with electric controlling is expected to apply to other quantum control aspects.

Li-Guo Qin; Zhong-Yang Wang; Gong-Wei Lin; Jing-Yun Zhao; Shang-Qing Gong

2013-09-12T23:59:59.000Z

33

Uranium Oxide Semiconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

of semiconductors, it would consume the annual production rate of depleted uranium from uranium enrichment facilities. For more information: PDF Semiconductive Properties of...

34

DSENT - A Tool Connecting Emerging Photonics with Electronics for Opto-Electronic Networks-on-Chip Modeling  

E-Print Network (OSTI)

With the advent of many-core chips that place substantial demand on the NoC, photonics has been investigated as a promising alternative to electrical NoCs. While numerous opto-electronic NoCs have been proposed, their ...

Sun, Chen

2012-02-08T23:59:59.000Z

35

Theory of Semiconductor Laser Cooling .  

E-Print Network (OSTI)

??Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order (more)

Rupper, Greg

2010-01-01T23:59:59.000Z

36

An ultra-low dissipation micro-oscillator for quantum opto-mechanics  

E-Print Network (OSTI)

Generating non-classical states of light by opto-mechanical coupling depends critically on the mechanical and optical properties of micro-oscillators and on the minimization of thermal noise. We present an oscillating micro-mirror with a mechanical quality factor Q = 2.6x10^6 at cryogenic temperature and a Finesse of 65000, obtained thanks to an innovative approach to the design and the control of mechanical dissipation. Already at 4 K with an input laser power of 2 mW, the radiation-pressure quantum fluctuations become the main noise source, overcoming thermal noise. This feature makes our devices particularly suitable for the production of pondero-motive squeezing.

E. Serra; A. Borrielli; F. S. Cataliotti; F. Marin; F. Marino; A. Pontin; G. A. Prodi; M. Bonaldi

2012-08-30T23:59:59.000Z

37

An ultra-low dissipation micro-oscillator for quantum opto-mechanics  

E-Print Network (OSTI)

Generating non-classical states of light by opto-mechanical coupling depends critically on the mechanical and optical properties of micro-oscillators and on the minimization of thermal noise. We present an oscillating micro-mirror with a mechanical quality factor Q = 2.6x10^6 at cryogenic temperature and a Finesse of 65000, obtained thanks to an innovative approach to the design and the control of mechanical dissipation. Already at 4 K with an input laser power of 2 mW, the radiation-pressure quantum fluctuations become the main noise source, overcoming thermal noise. This feature makes our devices particularly suitable for the production of pondero-motive squeezing.

Serra, E; Cataliotti, F S; Marin, F; Marino, F; Pontin, A; Prodi, G A; Bonaldi, M

2012-01-01T23:59:59.000Z

38

Ferromagnetism in Oxide Semiconductors  

SciTech Connect

In order to become a practical technology, semiconductor spintronics requires the discovery and utilization of ferromagnetic semiconductors which exhibit spin polarization in the majority carrier band at and above room temperature. Intrinsic remanent magnetization would allow spin polarized currents to be propagated in such materials without the need for a continuous magnetic field. However, the discovery and understanding of such materials is proving to be a grand challenge in solid-state science. Indeed, one of the 125 critical unanswered scientific questions recently posed in Science magazine asks, Is it possible to create magnetic semiconductors that work at room temperature?

Chambers, Scott A.; Droubay, Timothy; Wang, Chong M.; Rosso, Kevin M.; Heald, Steve M.; Schwartz, S. A.; Kittilstved, Kevin R.; Gamelin, Daniel R.

2006-11-01T23:59:59.000Z

39

Mixed Semiconductor Nanocrystal Compositions  

NLE Websites -- All DOE Office Websites (Extended Search)

Mixed Semiconductor Nanocrystal Compositions Mixed Semiconductor Nanocrystal Compositions Mixed Semiconductor Nanocrystal Compositions Composition comprising one or more energy donors and one or more energy acceptors. Available for thumbnail of Feynman Center (505) 665-9090 Email Mixed Semiconductor Nanocrystal Compositions Composition comprising one or more energy donors and one or more energy acceptors, wherein energy is transferred from the energy donor to the energy acceptor and wherein: the energy acceptor is a colloidal nanocrystal having a lower band gap energy than the energy donor; the energy donor and the energy acceptor are separated by a distance of 40 nm or less; wherein the average peak absorption energy of the acceptor is at least 20 meV greater than the average peak emission energy of the energy donor; and

40

Photoelectrochemical etching of semiconductors  

Science Conference Proceedings (OSTI)

Photoelectrochemical (PEC) etching of III-V semiconductors has been used to fabricate unique structures in electronic and photonic devices, such as integral lenses on light-emitting diodes, gratings on laser structures, and through-wafer via connections ...

P. A. Kohl

1998-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Method of doping a semiconductor  

DOE Patents (OSTI)

A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

Yang, Chiang Y. (Miller Place, NY); Rapp, Robert A. (Columbus, OH)

1983-01-01T23:59:59.000Z

42

Hydrogen in semiconductors  

DOE Green Energy (OSTI)

After an incubation'' period in the 1970's and early 80's, during which the first hydrogen related centers were discovered and characterized in ultra-pure germanium, a sharp increase of research activity occurred after the discovery of shallow acceptor passivation in crystalline silicon. The aim of this review is to convey an insight into the rich, multifaceted physics and materials science which has emerged from the vast variety of experimental and theoretical studies of hydrogen in semiconductors. In order to arrive at the current understanding of hydrogen related phenomena in a logical way, each chapter will start with a brief review of the major experimental and theoretical advances of the past few years. Those who are interested to learn more about this fascinating area of semiconductor research are referred to reviews, to a number of conference proceedings volumes, and to an upcoming book which will contain authoritative chapters on most aspects of hydrogen in crystalline semiconductors. Some of the early art of semiconductor device processing can finally be put on a scientific foundation and new ways of arriving at advanced device structures begin to use what we have learned from the basic studies of hydrogen in semiconductors. 92 refs., 8 figs.

Haller, E.E. (California Univ., Berkeley, CA (USA) Lawrence Berkeley Lab., CA (USA))

1990-06-01T23:59:59.000Z

43

Light-matter Interactions in Semiconductor Nanostructures  

Science Conference Proceedings (OSTI)

Light-matter interactions in Semiconductor Nanostructures. ... We investigate the interaction of light with semiconductor-based nanostructures. ...

2012-05-30T23:59:59.000Z

44

Page not found | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

21 - 530 of 26,777 results. 21 - 530 of 26,777 results. Download WA_01_028_GENERAL_ELECTRIC_CORP_R_and_D_Waiver_of_Domestic_and_F.pdf http://energy.gov/gc/downloads/wa01028generalelectriccorpranddwaiverofdomesticandfpdf Download WA_05_059_SHELL_SOLAR_INDUSTRIES_LP_Waiver_of_Domestic_and_F.pdf http://energy.gov/gc/downloads/wa05059shellsolarindustrieslpwaiverofdomesticandfpdf Download WA_01_014_VOITH_FABRICS_APPLETON_Waiver_of_Domestic_and_Fore.pdf http://energy.gov/gc/downloads/wa01014voithfabricsappletonwaiverofdomesticandforepdf Download WA_1993_003_EATON_CORPORATION_Waiver_of_Domestic_and_Foreign.pdf http://energy.gov/gc/downloads/wa1993003eatoncorporationwaiverofdomesticandforeignpdf Download WA_05_017_OSRAM_OPTO_SEMICONDUCTORS_Waiver_of_Domestic_and_F.pdf http://energy.gov/gc/downloads/wa05017osramoptosemiconductorswaiverofdomesticandfpdf

45

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Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

11 - 20 of 31,917 results. 11 - 20 of 31,917 results. Download WA_1994_027_FORD_MOTOR_COMPANY_Waiver_of_Domestic_and_Foreig.pdf http://energy.gov/gc/downloads/wa1994027fordmotorcompanywaiverofdomesticandforeigpdf Download WA_1993_033_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf http://energy.gov/gc/downloads/wa1993033goldenphotonincwaiverofdomesticandforeignpdf Download WA_05_017_OSRAM_OPTO_SEMICONDUCTORS_Waiver_of_Domestic_and_F.pdf http://energy.gov/gc/downloads/wa05017osramoptosemiconductorswaiverofdomesticandfpdf Download WA_03_017_HYBRID_POWER_GENERATION_SYSTEMS_Waiver_of_Domestic.pdf http://energy.gov/gc/downloads/wa03017hybridpowergenerationsystemswaiverofdomesticpdf Download WA_00_017_GENERAL_ATOMICS_Waiver_of_the_Government_Domestic_.pdf http://energy.gov/gc/downloads/wa00017generalatomicswaiverofthegovernmentdomesticpdf

46

Kansas Advanced Semiconductor Project  

SciTech Connect

KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

2007-09-21T23:59:59.000Z

47

Amorphous semiconductor solar cell  

SciTech Connect

A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

Dalal, Vikram L. (Newark, DE)

1981-01-01T23:59:59.000Z

48

Compound semiconductor MOSFETs  

Science Conference Proceedings (OSTI)

Enhancement mode, high electron mobility MOSFET devices have been fabricated using an oxide high-@k gate dielectric stack developed using molecular beam epitaxy. A template layer of Ga"2O"3, initially deposited on the surface of the III-V device unpins ... Keywords: Compound semiconductors, GaAs gate dielectric, III-V MOSFETs

R. Droopad; K. Rajagopalan; J. Abrokwah; P. Zurcher; M. Passlack

2007-09-01T23:59:59.000Z

49

Definition: Semiconductor | Open Energy Information  

Open Energy Info (EERE)

Semiconductor Semiconductor Jump to: navigation, search Dictionary.png Semiconductor Any material that has a limited capacity for conducting an electric current. Certain semiconductors, including silicon, gallium arsenide, copper indium diselenide, and cadmium telluride, are uniquely suited to the photovoltaic conversion process.[1] View on Wikipedia Wikipedia Definition A semiconductor is a material which has electrical conductivity to a degree between that of a metal (such as copper) and that of an insulator (such as glass). Semiconductors are the foundation of modern solid state electronics, including transistors, solar cells, light-emitting diodes (LEDs), quantum dots and digital and analog integrated circuits. A semiconductor may have a number of unique properties, one of which is the

50

Light amplification using semiconductors  

Science Conference Proceedings (OSTI)

During the summer of 1953, John von Neumann discussed his ideas concerning light amplification using semiconductors with Edward Teller. In September of that year, von Neumann sent a manuscript containing his ideas and calculations on this subject to Teller for his comments. To the best of our knowledge, von Neumann did not take time to work further on these ideas, and the manuscript remained unpublished. These previously unpublished writings of John von Neumann on the subject of light amplification in semiconductors are printed as a service to the laser community. While von Neumann's original manuscript and his letter to Teller are available to anyone who visits the Library of Congress, it is much more convenient to have this paper appear in an archival journal.

Dupuis, R.D.

1987-06-01T23:59:59.000Z

51

Isotopically controlled semiconductors  

SciTech Connect

The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

Haller, Eugene E.

2006-06-19T23:59:59.000Z

52

Method of passivating semiconductor surfaces  

DOE Patents (OSTI)

A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Wanlass, Mark W. (Golden, CO)

1990-01-01T23:59:59.000Z

53

Method of passivating semiconductor surfaces  

DOE Patents (OSTI)

A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Wanlass, M.W.

1990-06-19T23:59:59.000Z

54

Isotopically controlled semiconductors  

SciTech Connect

Semiconductor bulk crystals and multilayer structures with controlled isotopic composition have attracted much scientific and technical interest in the past few years. Isotopic composition affects a large number of physical properties, including phonon energies and lifetimes, bandgaps, the thermal conductivity and expansion coefficient and spin-related effects. Isotope superlattices are ideal media for self-diffusion studies. In combination with neutron transmutation doping, isotope control offers a novel approach to metal-insulator transition studies. Spintronics, quantum computing and nanoparticle science are emerging fields using isotope control.

Haller, Eugene E.

2001-12-21T23:59:59.000Z

55

Layered semiconductor neutron detectors  

SciTech Connect

Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

Mao, Samuel S; Perry, Dale L

2013-12-10T23:59:59.000Z

56

Semiconductor devices incorporating multilayer interference regions  

DOE Patents (OSTI)

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

1987-08-31T23:59:59.000Z

57

Variable temperature semiconductor film deposition  

DOE Patents (OSTI)

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Li, X.; Sheldon, P.

1998-01-27T23:59:59.000Z

58

Nanostructures, magnetic semiconductors and spintronics  

Science Conference Proceedings (OSTI)

The aim of this paper is to give a brief overview of recent advances in the area of semiconductor nanomaterials, which represent extremely promising applications for materials with the spin-polarized transport of the charge carriers. It is shown on the ... Keywords: Magnetic properties, Nanostructure, Semiconductor, Spin-polarized transport, Spintronics

Paata Kervalishvili; Alexander Lagutin

2008-08-01T23:59:59.000Z

59

Mesoscopic Magnetic/Semiconductor Heterostructures  

Science Conference Proceedings (OSTI)

We report the experimental results of Fe and Fe3O4 nanostructures on GaAs(100) surfaces and hybrid Ferromagnetic/Semiconductor/Ferromagnetic (FM/SC/FM) spintronic devices. Element specific x-ray magnetic circular dichroism (XMCD) ... Keywords: Epitaxial ferromagnetic thin film, ferromagnetic/semiconductor hybrid structures, spintronics

Yong Bing Xu; E. Ahmad; Yong Xiong Lu; J. S. Claydon; Ya Zhai; G. van der Laan

2006-09-01T23:59:59.000Z

60

Process for producing chalcogenide semiconductors  

DOE Patents (OSTI)

A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

Noufi, R.; Chen, Y.W.

1985-04-30T23:59:59.000Z

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Method Of Transferring Strained Semiconductor Structures  

NLE Websites -- All DOE Office Websites (Extended Search)

Of Transferring Strained Semiconductor Structures Of Transferring Strained Semiconductor Structures Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. June 25, 2013 Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. Available for thumbnail of Feynman Center (505) 665-9090 Email Method Of Transferring Strained Semiconductor Structures The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having

62

Climate VISION: Private Sector Initiatives: Semiconductors: Resources...  

Office of Scientific and Technical Information (OSTI)

FederalState Programs PFC ReductionClimate Partnership for the Semiconductor Industry Launched in 1996 in collaboration with the Semiconductor Industry Association, EPA's PFC...

63

Sandia National Labs: PCNSC: Research: Compound Semiconductor...  

NLE Websites -- All DOE Office Websites (Extended Search)

Compound Semiconductor Science and Technology Thrust The Physical, Chemical, and Nano Sciences Center's vision for Compound Semiconductors is to develop the science of compound...

64

Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference  

DOE Patents (OSTI)

An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies are disclosed. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100`s THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 {micro}m to 1.66 {micro}m for fiber optics can be accomplished with a nearly continuous frequency coverage. 7 figs.

Georgiades, N.P.; Polzik, E.S.; Kimble, H.J.

1999-02-02T23:59:59.000Z

65

Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference  

DOE Patents (OSTI)

An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100's THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 .mu.m to 1.66 .mu.m for fiber optics can be accomplished with a nearly continuous frequency coverage.

Georgiades, Nikos P. (Pasadena, CA); Polzik, Eugene S. (H.o slashed.jbjerg, DK); Kimble, H. Jeff (LaCanada, CA)

1999-02-02T23:59:59.000Z

66

Semiconductor Nanoclusters as Potential Photocatalysts  

NLE Websites -- All DOE Office Websites (Extended Search)

Development of Cantilever Epitaxy to Produce High Quality GaN with Reduced Development of Cantilever Epitaxy to Produce High Quality GaN with Reduced Threading Dislocation Densities by C. C. Mitchell, A. A. Allerman, C. I. H. Ashby, R. D. Briggs, D. M. Follstadt, S. L. Lee, D. D. Koleske Motivation-GaN grown on any currently available substrates has an inherent problem of having to overcome a large lattice mismatch with the substrate. As a result typical planar GaN includes anywhere from 10 8 - 10 10 threading dislocations per square centimeter. Cantilever epitaxy (CE) is a technique developed to produce areas of GaN with a reduced number of vertical threading dislocations (VTDs) over large areas. Low defect materials are required to reduce leakage and breakdown of both electronic and opto- electronic devices. Accomplishment-This

67

Hydrogen in compound semiconductors  

DOE Green Energy (OSTI)

Progress in the understanding of hydrogen and its interactions in III/V and II/VI compound semiconductors is reviewed. Donor, acceptor and deep level passivation is well established in III/V compounds based on electrical measurements and on spectroscopic studies. The hydrogen donor levels in GaAs and GaP are estimated to lie near E{sub v}+0.5 eV and E{sub v}+0.3 eV, respectively. Arsenic acceptors have been passivated by hydrogen in CdTe and the very first nitrogen-hydrogen local vibrational model spectra in ZnSe have been reported. This long awaited result may lead to an explanation for the poor activation of nitrogen acceptors in ZnSe grown by techniques which involve high concentrations of hydrogen.

Haller, E.E.

1993-05-01T23:59:59.000Z

68

Semiconductor radiation detector  

DOE Patents (OSTI)

A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

Bell, Zane W. (Oak Ridge, TN); Burger, Arnold (Knoxville, TN)

2010-03-30T23:59:59.000Z

69

Thermal Conductivity of Polycrystalline Semiconductors and Ceramics  

E-Print Network (OSTI)

industries, polycrystalline semiconductors and ceramics havelaser industry, people are also seeking good ceramic laser

Wang, Zhaojie

2012-01-01T23:59:59.000Z

70

Simulating nanoscale semiconductor devices.  

SciTech Connect

The next generation of electronic devices will be developed at the nanoscale and molecular level, where quantum mechanical effects are observed. These effects must be accounted for in the design process for such small devices. One prototypical nanoscale semiconductor device under investigation is a resonant tunneling diode (RTD). Scientists are hopeful the quantum tunneling effects present in an RTD can be exploited to induce and sustain THz frequency current oscillations. To simulate the electron transport within the RTD, the Wigner-Poisson equations are used. These equations describe the time evolution of the electrons distribution within the device. In this paper, this model and a parameter study using this model will be presented. The parameter study involves calculating the steady-state current output from the RTD as a function of an applied voltage drop across the RTD and also calculating the stability of that solution. To implement the parameter study, the computational model was connected to LOCA (Library of Continuation Algorithms), a part of Sandia National Laboratories parallel solver project, Trilinos. Numerical results will be presented.

Salinger, Andrew Gerhard; Zhao, P. (North Carolina State University, Raleigh, NC); Woolard, D. L. (U. S. Army Research Laboratory, NC); Kelley, C. Tim (North Carolina State University, Raleigh, NC); Lasater, Matthew S. (North Carolina State University, Raleigh, NC)

2005-03-01T23:59:59.000Z

71

Wide-Bandgap Semiconductors  

SciTech Connect

With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters. With the advent of the use of SiC devices it is imperative that models of these be made available in commercial simulators. This enables power electronic designers to simulate their designs for various test conditions prior to fabrication. To build an accurate transistor-level model of a power electronic system such as an inverter, the first step is to characterize the semiconductor devices that are present in the system. Suitable test beds need to be built for each device to precisely test the devices and obtain relevant data that can be used for modeling. This includes careful characterization of the parasitic elements so as to emulate the test setup as closely as possible in simulations. This report is arranged as follows: Chapter 2--The testing and characterization of several diodes and power switches is presented. Chapter 3--A 55-kW hybrid inverter (Si insulated gate bipolar transistor--SiC Schottky diodes) device models and test results are presented. A detailed description of the various test setups followed by the parameter extraction, modeling, and simulation study of the inverter performance is presented. Chapter 4--A 7.5-kW all-SiC inverter (SiC junction field effect transistors (JFET)--SiC Schottky diodes) was built and tested. The models built in Saber were validated using the test data and the models were used in system applications in the Saber simulator. The simulation results and a comparison of the data from the prototype tests are discussed in this chapter. Chapter 5--The duration test results of devices utilized in buck converters undergoing reliability testing are presented.

Chinthavali, M.S.

2005-11-22T23:59:59.000Z

72

Synchronization in semiconductor laser rings  

E-Print Network (OSTI)

We examine the dynamics of semiconductor lasers coupled in a ring configuration. The lasers, which have stable output intensity when isolated, behave chaotically when coupled unidirectionally in a closed chain. In this way, we show that neither feedback nor bidirectional coupling is necessary to induce chaotic dynamics at the laser output. We study the synchronization phenomena arising in this particular coupling architecture, and discuss its possible application to chaos-based communications. Next, we extend the study to bidirectional coupling and propose an appropriate technique to optical chaos encryption/decryption in closed chains of mutually coupled semiconductor lasers.

Javier M. Buldu; M. C. Torrent; Jordi Garcia-Ojalvo

2006-10-06T23:59:59.000Z

73

Correlated exciton dynamics in semiconductor nanostructures  

E-Print Network (OSTI)

The absorption and dissipation of energy in semiconductor nanostructures are often determined by excited electron dynamics. In semiconductors, one fundamentally important electronic state is an exciton, an excited electron ...

Wen, Patrick, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

74

Innovations in Semiconductor Devices for Exascale ...  

Science Conference Proceedings (OSTI)

Innovations in Semiconductor Devices for Exascale Computing. TC Chen IBM Fellow and Vice President of Science and ...

2010-10-05T23:59:59.000Z

75

Data mining solves tough semiconductor manufacturing problems  

Science Conference Proceedings (OSTI)

Keywords: data mining, machine learning, manufacturing optimization, neural networks, pattern recognition, rule induction, self organizing maps, semiconductor yield enhancement

Mike Gardner; Jack Bieker

2000-08-01T23:59:59.000Z

76

Sandia National Labs: PCNSC: Departments: Semiconductor Material...  

NLE Websites -- All DOE Office Websites (Extended Search)

Semiconductor Material & Device Sciences > Advanced Materials Sciences > Lasers, Optics & Remote Sensing Energy Sciences Small Science Cluster Business Office News Partnering...

77

Bottoms Up: Better Organic Semiconductors for Printable ...  

Science Conference Proceedings (OSTI)

... A patent from British researchers in 2005 offered a promising compromise: blend the small semiconductor molecules in with the polymer. ...

2012-10-18T23:59:59.000Z

78

Semiconductor assisted metal deposition for nanolithography applications  

DOE Patents (OSTI)

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Rajh, Tijana (Naperville, IL); Meshkov, Natalia (Downers Grove, IL); Nedelijkovic, Jovan M. (Belgrade, YU); Skubal, Laura R. (West Brooklyn, IL); Tiede, David M. (Elmhurst, IL); Thurnauer, Marion (Downers Grove, IL)

2002-01-01T23:59:59.000Z

79

Robust Capacity Planning in Semiconductor Manufacturing  

E-Print Network (OSTI)

Oct 3, 2001 ... Abstract: We present a stochastic programming approach to capacity planning under demand uncertainty in semiconductor manufacturing.

80

Economic Impact of Measurement in the Semiconductor ...  

Science Conference Proceedings (OSTI)

... semiconductors are the workhorses that take electric voltage and engender ... the distance between lines of memory (dynamic random access ...

2012-10-09T23:59:59.000Z

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM SYLVANIA PRODUCTS...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

RIGHTS UNDER DOE GRANT NO. DE-FG36-05GO85042 ENTITLED "TUNGSTEN CATHODE FUEL CELL CATALYST PROJECT"; W(A)-05-031; CH-1300 As set out in the attached waiver petitioner, the...

82

Clean Cities: National Clean Fleets Partner: OSRAM SYLVANIA  

NLE Websites -- All DOE Office Websites (Extended Search)

2 emissions including: Speed management and no-idling policies for service vehicles SmartWay certified vehicles required for the national sales fleet SYLVANIA Lighting Services...

83

Mechanical scriber for semiconductor devices  

DOE Patents (OSTI)

A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer. 5 figs.

Lin, P.T.

1985-03-05T23:59:59.000Z

84

Mechanical scriber for semiconductor devices  

DOE Patents (OSTI)

A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer.

Lin, Peter T. (East Brunswick, NJ)

1985-01-01T23:59:59.000Z

85

2010 Defects in Semiconductors GRC  

SciTech Connect

Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

Shengbai Zhang

2011-01-06T23:59:59.000Z

86

Power Electronics in the Semiconductor Fabrication Industry  

Science Conference Proceedings (OSTI)

This report provides utility marketing and account executives and engineering staff with fundamental information about the use of power electronics systems in semiconductor fabrication equipment. It details the power electronics systems used in typical semiconductor production equipment as well as current topology and system compatibility issues. Finally, the report outlines how power electronics will serve future advances in the semiconductor industry and how utilities can help the industry make their e...

1999-03-10T23:59:59.000Z

87

Stretchable semiconductor elements and stretchable electrical circuits  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Rogers, John A. (Champaign, IL); Khang, Dahl-Young (Seoul, KR); Menard, Etienne (Durham, NC)

2009-07-07T23:59:59.000Z

88

Optical devices featuring textured semiconductor layers  

DOE Patents (OSTI)

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

2012-08-07T23:59:59.000Z

89

Optical devices featuring textured semiconductor layers  

DOE Patents (OSTI)

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

2011-10-11T23:59:59.000Z

90

Lattice matched semiconductor growth on crystalline ...  

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or ...

91

Climate VISION: Private Sector Initiatives: Semiconductors: Work...  

Office of Scientific and Technical Information (OSTI)

Work Plans The Semiconductor Industry Association has finalized its work plan with the collaboration of EPA. The plan describes actions the industry intends to take to achieve its...

92

Wide Bandgap Semiconductors: Pursuing the Promise  

NLE Websites -- All DOE Office Websites (Extended Search)

the size of an automotive cooling system by 60% or even eliminate the secondary liquid cooling system. 2 Military: WBG semiconductors have great potential as an enabling...

93

Wafer-fused semiconductor radiation detector  

DOE Patents (OSTI)

Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

Lee, Edwin Y. (Livermore, CA); James, Ralph B. (Livermore, CA)

2002-01-01T23:59:59.000Z

94

Low Energy Ion Implantationin Semiconductor Manufacturing | U...  

Office of Science (SC) Website

Low Energy Ion Implantation in Semiconductor Manufacturing Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Spinoff Applications SBIRSTTR...

95

Low Energy Ion Implantationin Semiconductor Manufacturing | U...  

Office of Science (SC) Website

Low Energy Ion Implantation in Semiconductor Manufacturing Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Spinoff Applications Spinoff...

96

Stangl Semiconductor Equipment AG | Open Energy Information  

Open Energy Info (EERE)

Solar Product German manufacturer of wet chemistry systems for processing silicon and thin-film solar cells. References Stangl Semiconductor Equipment AG1 LinkedIn...

97

Opto-acoustic thrombolysis  

DOE Patents (OSTI)

This invention is a catheter-based device for generating an ultrasound excitation in biological tissue. Pulsed laser light is guided through an optical fiber to provide the energy for producing the acoustic vibrations. The optical energy is deposited in a water-based absorbing fluid, e.g. saline, thrombolytic agent, blood or thrombus, and generates an acoustic impulse in the fluid through thermoelastic and/or thermodynamic mechanisms. By pulsing the laser at a repetition rate (which may vary from 10 Hz to 100 kHz) an ultrasonic radiation field can be established locally in the medium. This method of producing ultrasonic vibrations can be used in vivo for the treatment of stroke-related conditions in humans, particularly for dissolving thrombus or treating vasospasm. The catheter can also incorporate thrombolytic drug treatments as an adjunct therapy and it can be operated in conjunction with ultrasonic detection equipment for imaging and feedback control and with optical sensors for characterization of thrombus type and consistency.

Celliers, Peter (Berkeley, CA); Da Silva, Luiz (Danville, CA); Glinsky, Michael (Livermore, CA); London, Richard (Orinda, CA); Maitland, Duncan (Livermore, CA); Matthews, Dennis (Moss Beach, CA); Fitch, Pat (Livermore, CA)

2000-01-01T23:59:59.000Z

98

Opto-acoustic thrombolysis  

Science Conference Proceedings (OSTI)

This invention is a catheter-based device for generating an ultrasound excitation in biological tissue. Pulsed laser light is guided through an optical fiber to provide the energy for producing the acoustic vibrations. The optical energy is deposited in a water-based absorbing fluid, e.g. saline, thrombolytic agent, blood or thrombus, and generates an acoustic impulse in the fluid through thermoelastic and/or thermodynamic mechanisms. By pulsing the laser at a repetition rate (which may vary from 10 Hz to 100 kHz) an ultrasonic radiation field can be established locally in the medium. This method of producing ultrasonic vibrations can be used in vivo for the treatment of stroke-related conditions in humans, particularly for dissolving thrombus or treating vasospasm. The catheter can also incorporate thrombolytic drug treatments as an adjunct therapy and it can be operated in conjunction with ultrasonic detection equipment for imaging and feedback control and with optical sensors for characterization of thrombus type and consistency.

Celliers, P.; Silva, L. Da; Glinsky, M.; London, R.; Maitland, D.; Matthews, D.; Fitch, P.

2000-02-08T23:59:59.000Z

99

Stable surface passivation process for compound semiconductors  

DOE Patents (OSTI)

A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.

Ashby, Carol I. H. (Edgewood, NM)

2001-01-01T23:59:59.000Z

100

Preparation of a semiconductor thin film  

SciTech Connect

A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Pehnt, Martin (TuBingen, DE); Schulz, Douglas L. (Denver, CO); Curtis, Calvin J. (Lakewood, CO); Ginley, David S. (Evergreen, CO)

1998-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Semiconductor liquid-junction solar cell  

DOE Patents (OSTI)

A semiconductor liquid junction photocell in which the photocell is in the configuration of a light concentrator and in which the electrolytic solution both conducts current and facilitates the concentration of incident solar radiation onto the semiconductor. The photocell may be in the configuration of a non-imaging concentrator such as a compound parabolic concentrator, or an imaging concentrator such as a lens.

Parkinson, B.A.

1982-10-29T23:59:59.000Z

102

Business Case Slide 28: High-Value: Semiconductors - Program...  

NLE Websites -- All DOE Office Websites (Extended Search)

Semiconductors - Program Focus Previous Slide Next Slide Table of Contents High-Value: Semiconductors - Program Focus Measurement of DUO2 transistor properties at ORNL Measurement...

103

Novel room temperature ferromagnetic semiconductors  

SciTech Connect

Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous distribution of Mn substituting for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

Gupta, Amita

2004-11-01T23:59:59.000Z

104

Semiconductor switch geometry with electric field shaping  

DOE Patents (OSTI)

An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

Booth, Rex (Livermore, CA); Pocha, Michael D. (Livermore, CA)

1994-01-01T23:59:59.000Z

105

Radiation pressure excitation of test mass ultrasonic modes via three mode opto-acoustic interactions in a suspended Fabry-Perot cavity  

E-Print Network (OSTI)

Three-mode parametric-instabilities risk stable operation of gravitational-wave detectors. Instabilities occur through time varying radiation-pressure distributions, derived from beating between two optical modes, exciting mirror acoustic modes in Fabry-Perot cavities. Here we report the first demonstration of radiation-pressure driving of ultrasonic-acoustic modes via pairs of optical modes in gravitational-wave type optical cavities. In this experiment ~0.4W of TEM01 mode and ~1kW of TEM00 mode circulated inside the cavity, an ~181.6kHz excitation was observed with amplitude ~5E-13m. The results verify the driving force term in Braginsky's parametric instability feedback model. The interaction parametric gain was (3.8+/-0.5)E-3 and mass-ratio scaled opto-acoustic overlap 2.7+/-0.4.

Blair, Carl; Zhao, Chunnong; Qi, Fang; Ju, Li; Blair, David

2013-01-01T23:59:59.000Z

106

Energy Management in Semiconductor Cleanrooms  

NLE Websites -- All DOE Office Websites (Extended Search)

6 6 Energy Management in Semiconductor Cleanrooms Cleanrooms are used extensively in the manufacturing of integrated circuits and in the biological and pharmaceutical industries. For particle concentrations to remain low, for example, less than 100 particles/ft3 at >0.5 micrometers (Class 100), the air in the cleanroom must be filtered. Typically, the air is circulated through high-efficiency particulate air (HEPA) filters at a very high rate, such as 400 to 600 room air volumes per hour, to maintain low particle concentrations. The combined effect of high recirculation and a high pressure drop through HEPA filters is higher power costs per unit floor area to operate the cleanroom than to ventilate a commercial building. Cleanrooms are usually ventilated constantly and

107

Phosphorus doping a semiconductor particle  

DOE Patents (OSTI)

A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.

Stevens, G.D.; Reynolds, J.S.

1999-07-20T23:59:59.000Z

108

Boron doping a semiconductor particle  

DOE Patents (OSTI)

A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

Stevens, Gary Don (18912 Ravenglen Ct., Dallas, TX 75287); Reynolds, Jeffrey Scott (703 Horizon, Murphy, TX 75094); Brown, Louanne Kay (2530 Poplar Tr., Garland, TX 75042)

1998-06-09T23:59:59.000Z

109

Excess charges in semiconductor nanocrystallites  

Science Conference Proceedings (OSTI)

The authors explore in this report the effects of excess electrons on the edge of the absorption spectrum of small semiconductor particles. The presence of these charges leads to strong bleaching of the absorption at the exciton region and to slight enhancement of the absorption on both sides of the bleaching. They show that the effect is independent of the origin of the charge; it occurs whether the charge is injected into the particle or only attached to its surface, and it appears even when the charge is deeply localized within the band gap. They conclude that the effect arises from the electric field associated with the charge and not from its presence in the band.

Laungdilok, C.; Lawless, D.; Cook, A.R.; Meisel, D. [Argonne National Lab., IL (United States). Chemistry Div.

1995-06-01T23:59:59.000Z

110

Semiconductor processing with excimer lasers  

DOE Green Energy (OSTI)

The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications.

Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

1983-01-01T23:59:59.000Z

111

Heating device for semiconductor wafers  

DOE Patents (OSTI)

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

Vosen, S.R.

1999-07-27T23:59:59.000Z

112

Heating device for semiconductor wafers  

DOE Patents (OSTI)

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

Vosen, Steven R. (Berkeley, CA)

1999-01-01T23:59:59.000Z

113

Semiconductor Nanoclusters as Potential Photocatalysts  

NLE Websites -- All DOE Office Websites (Extended Search)

High Power Electronics Based on the 2-Dimensional Electron Gas in GaN High Power Electronics Based on the 2-Dimensional Electron Gas in GaN Heterostructures by S. R. Kurtz, A. A. Allerman, and D. Koleski Motivation-GaN-based electronics offer miniaturization potential of radical proportions for microwave power amplifiers. GaN's large bandgap, high breakdown field, high electron velocity, and excellent thermal properties have led to high electron mobility transistors (HEMT) with up to 10x the power density of GaAs and other traditional semiconductors at frequencies up to 20 GHz. Further contributing to the outstanding performance of GaN-based amplifiers is the highly conducting, 2-dimensional electron gas (2DEG) used for the HEMT channel. Intrinsic polarization and piezoelectric properties of GaN materials can produce a 2DEG at an

114

Flow-Solution-Liquid-Solid Growth of Semiconductor Nanowires: A Novel Approach for Controlled Synthesis  

SciTech Connect

Semiconductor nanowires (SC-NWs) have potential applications in diverse technologies from nanoelectronics and photonics to energy harvesting and storage due to their quantum-confined opto-electronic properties coupled with their highly anisotropic shape. Here, we explore new approaches to an important solution-based growth method known as solution-liquid-solid (SLS) growth. In SLS, molecular precursors are reacted in the presence of low-melting metal nanoparticles that serve as molten fluxes to catalyze the growth of the SC-NWs. The mechanism of growth is assumed to be similar to that of vapor-liquid-solid (VLS) growth, with the clear distinctions of being conducted in solution in the presence of coordinating ligands and at relatively lower temperatures (<300 C). The resultant SC-NWs are soluble in common organic solvents and solution processable, offering advantages such as simplified processing, scale-up, ultra-small diameters for quantum-confinement effects, and flexible choice of materials from group III-V to groups II-VI, IV-VI, as well as truly ternary I-III-VI semiconductors as we recently demonstrates. Despite these advantages of SLS growth, VLS offers several clear opportunities not allowed by conventional SLS. Namely, VLS allows sequential addition of precursors for facile synthesis of complex axial heterostructures. In addition, growth proceeds relatively slowly compared to SLS, allowing clear assessments of growth kinetics. In order to retain the materials and processing flexibility afforded by SLS, but add the elements of controlled growth afforded by VLS, we transformed SLS into a flow based method by adapting it to synthesis in a microfluidic system. By this new method - so-called 'flow-SLS' (FSLS) - we have now demonstrated unprecedented fabrication of multi-segmented SC-NWs, e.g., 8-segmented CdSe/ZnSe defined by either compositionally abrupt or alloyed interfaces as a function of growth conditions. In addition, we have studied growth rates as a function of catalyst size/SC-NW diameter and shown for the first time that SLS is governed by Gibbs-Thomson effects. Lastly, from an applications standpoint, we report growth of SC-NWs from a range of substrates, including ITO-coated glass for fabrication of hybrid photovoltaic devices, comparing these to their quasi zero-dimensional quantum-dot counterparts.

Hollingsworth, Jennifer A. [Los Alamos National Laboratory; Palaniappan, Kumaranand [Los Alamos National Laboratory; Laocharoensuk, Rawiwan [National Science and Technology Center, Thailand; Smith, Nickolaus A. [Los Alamos National Laboratory; Dickerson, Robert M. [Los Alamos National Laboratory; Casson, Joanna L. [Los Alamos National Laboratory; Baldwin, Jon K. [Los Alamos National Laboratory

2012-06-07T23:59:59.000Z

115

Flow-Solution-Liquid-Solid Growth of Semiconductor Nanowires: A Novel Approach for Controlled Synthesis  

SciTech Connect

Semiconductor nanowires (SC-NWs) have potential applications in diverse technologies from nanoelectronics and photonics to energy harvesting and storage due to their quantum-confined opto-electronic properties coupled with their highly anisotropic shape. Here, we explore new approaches to an important solution-based growth method known as solution-liquid-solid (SLS) growth. In SLS, molecular precursors are reacted in the presence of low-melting metal nanoparticles that serve as molten fluxes to catalyze the growth of the SC-NWs. The mechanism of growth is assumed to be similar to that of vapor-liquid-solid (VLS) growth, with the clear distinctions of being conducted in solution in the presence of coordinating ligands and at relatively lower temperatures (<300 C). The resultant SC-NWs are soluble in common organic solvents and solution processable, offering advantages such as simplified processing, scale-up, ultra-small diameters for quantum-confinement effects, and flexible choice of materials from group III-V to groups II-VI, IV-VI, as well as truly ternary I-III-VI semiconductors as we recently demonstrates. Despite these advantages of SLS growth, VLS offers several clear opportunities not allowed by conventional SLS. Namely, VLS allows sequential addition of precursors for facile synthesis of complex axial heterostructures. In addition, growth proceeds relatively slowly compared to SLS, allowing clear assessments of growth kinetics. In order to retain the materials and processing flexibility afforded by SLS, but add the elements of controlled growth afforded by VLS, we transformed SLS into a flow based method by adapting it to synthesis in a microfluidic system. By this new method - so-called 'flow-SLS' (FSLS) - we have now demonstrated unprecedented fabrication of multi-segmented SC-NWs, e.g., 8-segmented CdSe/ZnSe defined by either compositionally abrupt or alloyed interfaces as a function of growth conditions. In addition, we have studied growth rates as a function of catalyst size/SC-NW diameter and shown for the first time that SLS is governed by Gibbs-Thomson effects. Lastly, from an applications standpoint, we report growth of SC-NWs from a range of substrates, including ITO-coated glass for fabrication of hybrid photovoltaic devices, comparing these to their quasi zero-dimensional quantum-dot counterparts.

Hollingsworth, Jennifer A. [Los Alamos National Laboratory; Palaniappan, Kumaranand [Los Alamos National Laboratory; Laocharoensuk, Rawiwan [National Science and Technology Center, Thailand; Smith, Nickolaus A. [Los Alamos National Laboratory; Dickerson, Robert M. [Los Alamos National Laboratory; Casson, Joanna L. [Los Alamos National Laboratory; Baldwin, Jon K. [Los Alamos National Laboratory

2012-06-07T23:59:59.000Z

116

Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices  

DOE Green Energy (OSTI)

This report represents the completion of a three-year Laboratory-Directed Research and Development (LDRD) program that focused on research and development of GaN-based wide bandgap semiconductor materials (referred to as III-N materials). Our theoretical investigations include the determination of fundamental materials parameters from first-principles calculations, the study of gain properties of III-N heterostructures using a microscopic laser theory and density-functional-theory, charge-state calculations to determine the core structure and energy levels of dislocations in III-N materials. Our experimental investigations include time-resolved photoluminescence and magneto-luminescence studies of GaN epilayers and multiquantum well samples as well as x-ray diffraction studies of AlGaN ternary alloys. In addition, we performed a number of experiments to determine how various materials processing steps affect both the optical and electrical properties of GaN-based materials. These studies include photoluminescence studies of GaN epilayers after post-growth rapid thermal annealing, ion implantation to produce n- and p-type material and electrical and optical studies of plasma-etched structures.

Crawford, M.H.; Chow, W.W.; Wright, A.F.; Lee, S.R.; Jones, E.D.; Han, J.; Shul, R.J.

1999-04-01T23:59:59.000Z

117

Mospec Semiconductor Corp | Open Energy Information  

Open Energy Info (EERE)

Mospec Semiconductor Corp Mospec Semiconductor Corp Jump to: navigation, search Name Mospec Semiconductor Corp Place Tainan, Taiwan Sector Solar Product Taiwanese semiconductor products producer; offers monocrystalline silicon wafers and as of April 2008, ingots for the solar industry. Coordinates 22.99721°, 120.180862° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":22.99721,"lon":120.180862,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

118

Gaining creative control over semiconductor nanowires  

NLE Websites -- All DOE Office Websites (Extended Search)

Gaining creative control over semiconductor nanowires Gaining creative control over semiconductor nanowires Gaining creative control over semiconductor nanowires Using a microfluidic reactor, Los Alamos researchers transformed the SLS process into a flow-based technique. September 26, 2013 Growth of nanowire precursors in a flowing carrier solvent Growth of nanowire precursors in a flowing carrier solvent The new "flow" solution-liquid-solid method allows scientists to slow down growth and thereby capture mechanistic details as the nanowires grow in solution. A Los Alamos research team has transformed the synthesis process of semiconductor nanowires for use in solar cells, batteries, electronics, sensors and photonics using a solution-liquid-solid (SLS) batch approach to achieve unprecedented control over growth rates, nanowire size and internal

119

Science and applications of infrared semiconductor nanocrystals  

E-Print Network (OSTI)

In this work we study several applications of semiconductor nanocrystals (NCs) with infrared band gaps. In the first half, we explore the physics of two systems with applications in NC based photovoltaics. The physics of ...

Geyer, Scott Mitchell

2010-01-01T23:59:59.000Z

120

High Aspect Ratio Semiconductor Heterojunction Solar Cells  

E-Print Network (OSTI)

High Aspect Ratio Semiconductor Heterojunction Solar Cells Haoting Shen Prof. Redwing's Research and in-situ dopant for Si nanowires Y. Ke, X.J. Weng, J.M. Redwing, C.M. Eichfeld, T.R. Swisher, S

Yener, Aylin

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Semiconductor-nanocrystal/conjugated polymer thin films  

DOE Patents (OSTI)

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Alivisatos, A. Paul (Oakland, CA); Dittmer, Janke J. (Munich, DE); Huynh, Wendy U. (Munich, DE); Milliron, Delia (Berkeley, CA)

2010-08-17T23:59:59.000Z

122

Developing New Nanoprobes from Semiconductor Nanocrystals  

E-Print Network (OSTI)

Water-Soluble Silica- Coated CdSe/ZnS Semiconductor QuantumEnhanced Luminescence of CdSe Quantum Dots on Gold Colloids.CdS/ZnS shells on colloidal CdSe nanorods. Journal Of The

Fu, Aihua

2006-01-01T23:59:59.000Z

123

Thermovoltaic semiconductor device including a plasma filter  

DOE Patents (OSTI)

A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

Baldasaro, Paul F. (Clifton Park, NY)

1999-01-01T23:59:59.000Z

124

Hemlock Semiconductor Corp HSC | Open Energy Information  

Open Energy Info (EERE)

Hemlock Semiconductor Corp HSC Hemlock Semiconductor Corp HSC Jump to: navigation, search Name Hemlock Semiconductor Corp (HSC) Place Hemlock, Michigan Zip 48626 Sector Solar Product US-based manufacturer polycrystalline silicon for semiconductor and solar industries. Coordinates 39.589497°, -82.153275° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.589497,"lon":-82.153275,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

125

Climate VISION: Private Sector Initiatives: Semiconductors  

Office of Scientific and Technical Information (OSTI)

Letters of Intent/Agreements Letters of Intent/Agreements The U.S. semiconductor industry, represented by the members of the Environmental Protection Agency's PFC Reduction/Climate Partnership for the Semiconductor Industry, has committed to reduce absolute perfluorocompound (PFC) emissions by 10% below the 1995 baseline level by the year 2010. Perfluorocompounds include the most potent and long-lived greenhouse gases such as perfluorocarbons (e.g., CF4, C2F6, C3F8), trifluoromethane (CHF3), nitrogen trifluoride (NF3), and sulfur hexafluoride (SF6). The Environmental Protection Agency's (EPA) voluntary semiconductor industry partnership was developed collaboratively with the Semiconductor Industry Association (SIA). EPA, SIA, and the Partner companies (listed below) are working to reduce industry greenhouse gas (GHG) emissions. EPA's

126

Optical temperature indicator using thermochromic semiconductors  

DOE Patents (OSTI)

A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

Kronberg, J.W.

1995-01-01T23:59:59.000Z

127

Anomalous Charge Transport in Disordered Organic Semiconductors  

Science Conference Proceedings (OSTI)

Anomalous charge carrier transport in disordered organic semiconductors is studied using fractional differential equations. The connection between index of fractional derivative and dispersion exponent is examined from the perspective of fractional Fokker-Planck equation and its link to the continuous time random walk formalism. The fractional model is used to describe the bi-scaling power-laws observed in the time-of flight photo-current transient data for two different types of organic semiconductors.

Muniandy, S. V.; Woon, K. L. [Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Choo, K. Y. [Faculty of Engineering, Multimedia University, 63100 Cyberjaya, Selangor (Malaysia)

2011-03-30T23:59:59.000Z

128

Optical devices featuring nonpolar textured semiconductor layers  

DOE Patents (OSTI)

A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

2013-11-26T23:59:59.000Z

129

Electron gas grid semiconductor radiation detectors  

DOE Patents (OSTI)

An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

Lee, Edwin Y. (Livermore, CA); James, Ralph B. (Livermore, CA)

2002-01-01T23:59:59.000Z

130

Spin Transport in Semiconductor heterostructures  

SciTech Connect

The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

Domnita Catalina Marinescu

2011-02-22T23:59:59.000Z

131

Photoelectrochemistry of Semiconductor Nanowire Arrays  

DOE Green Energy (OSTI)

This project supported research on the growth and photoelectrochemical characterization of semiconductor nanowire arrays, and on the development of catalytic materials for visible light water splitting to produce hydrogen and oxygen. Silicon nanowires were grown in the pores of anodic aluminum oxide films by the vapor-liquid-solid technique and were characterized electrochemically. Because adventitious doping from the membrane led to high dark currents, silicon nanowire arrays were then grown on silicon substrates. The dependence of the dark current and photovoltage on preparation techniques, wire diameter, and defect density was studied for both p-silicon and p-indium phosphide nanowire arrays. The open circuit photovoltage of liquid junction cells increased with increasing wire diameter, reaching 350 mV for micron-diameter silicon wires. Liquid junction and radial p-n junction solar cells were fabricated from silicon nano- and microwire arrays and tested. Iridium oxide cluster catalysts stabilized by bidentate malonate and succinate ligands were also made and studied for the water oxidation reaction. Highlights of this project included the first papers on silicon and indium phosphide nanowire solar cells, and a new procedure for making ligand-stabilized water oxidation catalysts that can be covalently linked to molecular photosensitizers or electrode surfaces.

Mallouk, Thomas E; Redwing, Joan M

2009-11-10T23:59:59.000Z

132

Sandia National Labs: PCNSC: Departments: Semiconductor and Optical  

NLE Websites -- All DOE Office Websites (Extended Search)

Semiconductor & Optical Sciences Semiconductor & Optical Sciences > Semiconductor Material & Device Sciences > Advanced Materials Sciences > Lasers, Optics & Remote Sensing Energy Sciences Small Science Cluster Business Office News Partnering Research Jeff Nelson Jerry A. Simmons Sr. Manager Idabelle Idabelle Courtney Admin. Asst. Departments Semiconductor and Optical Sciences The Semiconductor and Optical Sciences Department oversees the operations of the following departments providing new scientific knowledge that can lead to technology solutions in the areas of: Compound semiconductor optoelectronic materials and devices Chemical science to materials technologies, emphasizing the science and engineering of Metal Organic Chemical Vapor Deposition (MOCVD) Remote sensing and detection of WMD proliferation activities

133

High-power semiconductor separate-confinement double heterostructure lasers  

Science Conference Proceedings (OSTI)

The review is devoted to high-power semiconductor lasers. Historical reference is presented, physical and technological foundations are considered, and the concept of high-power semiconductor lasers is formulated. Fundamental and technological reasons limiting the optical power of a semiconductor laser are determined. The results of investigations of cw and pulsed high-power semiconductor lasers are presented. Main attention is paid to inspection of the results of experimental studies of single high-power semiconductor lasers. The review is mainly based on the data obtained in the laboratory of semiconductor luminescence and injection emitters at the A.F. Ioffe Physicotechnical Institute. (review)

Tarasov, I S [A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

2010-10-15T23:59:59.000Z

134

Method for removing semiconductor layers from salt substrates  

DOE Patents (OSTI)

A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

Shuskus, Alexander J. (West Hartford, CT); Cowher, Melvyn E. (East Brookfield, MA)

1985-08-27T23:59:59.000Z

135

Light sources based on semiconductor current filaments  

DOE Patents (OSTI)

The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

Zutavern, Fred J. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Buttram, Malcolm T. (Sandia Park, NM); Mar, Alan (Albuquerque, NM); Helgeson, Wesley D. (Albuquerque, NM); O' Malley, Martin W. (Edgewood, NM); Hjalmarson, Harold P. (Albuquerque, NM); Baca, Albert G. (Albuquerque, NM); Chow, Weng W. (Cedar Crest, NM); Vawter, G. Allen (Albuquerque, NM)

2003-01-01T23:59:59.000Z

136

Zecon Solar Semiconductor Inc | Open Energy Information  

Open Energy Info (EERE)

Zecon Solar Semiconductor Inc Zecon Solar Semiconductor Inc Jump to: navigation, search Name Zecon Solar & Semiconductor Inc Place Cupertino, California Zip 95014 Sector Solar Product Focused on large-scale solar building integrated PV systems. Coordinates 37.31884°, -122.029244° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.31884,"lon":-122.029244,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

137

Emissivity Correcting Pyrometry of Semiconductor Growth  

NLE Websites -- All DOE Office Websites (Extended Search)

Emissivity Correcting Pyrometry of Semiconductor Growth Emissivity Correcting Pyrometry of Semiconductor Growth by W. G. Breiland, L. A. Bruskas, A. A. Allerman, and T. W. Hargett Motivation-Temperature is a critical factor in the growth of thin films by either chemical vapor deposition (CVD) or molecular beam epitaxy (MBE). It is particularly important in compound semiconductor growth because one is often challenged to grow materials with specific chemical compositions in order to maintain stringent lattice-matching conditions or to achieve specified bandgap values. Optical pyrometry can be used to measure surface temperatures, but the thin film growth causes significant changes in the emissivity of the surface, leading to severe errors in the pyrometer measurement. To avoid these errors, emissivity changes must be measured and

138

Atomic hydrogen cleaning of semiconductor photocathodes  

DOE Green Energy (OSTI)

Negative Electron Affinity (NEA) semiconductor photocathodes are widely used for the production of polarized electron beams, and are also useful for the production of high brightness electron beams which can be modulated at very high frequencies. Preparation of an atomically clean semiconductor surface is an essential step in the fabrication of a NEA photocathode. This cleaning step is difficult for certain semiconductors, such as the very thin materials which produce the highest beam polarization, and those which have tightly bound oxides and carbides. Using a small RF dissociation atomic hydrogen source, the authors have reproducibly cleaned GaAs wafers which have been only degreased prior to installation in vacuum. They have consistently prepared very high quantum efficiency photocathodes following atomic hydrogen cleaning. Details of their apparatus and most recent results are presented.

Sinclair, C.K.; Poelker, B.M.; Price, J.S. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

1997-06-01T23:59:59.000Z

139

Substrate solder barriers for semiconductor epilayer growth  

DOE Patents (OSTI)

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.

Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

1987-10-23T23:59:59.000Z

140

Blasting detonators incorporating semiconductor bridge technology  

SciTech Connect

The enormity of the coal mine and extraction industries in Russia and the obvious need in both Russia and the US for cost savings and enhanced safety in those industries suggests that joint studies and research would be of mutual benefit. The author suggests that mine sites and well platforms in Russia offer an excellent opportunity for the testing of Sandia`s precise time-delay semiconductor bridge detonators, with the potential for commercialization of the detonators for Russian and other world markets by both US and Russian companies. Sandia`s semiconductor bridge is generating interest among the blasting, mining and perforation industries. The semiconductor bridge is approximately 100 microns long, 380 microns wide and 2 microns thick. The input energy required for semiconductor bridge ignition is one-tenth the energy required for conventional bridgewire devices. Because semiconductor bridge processing is compatible with other microcircuit processing, timing and logic circuits can be incorporated onto the chip with the bridge. These circuits can provide for the precise timing demanded for cast effecting blasting. Indeed tests by Martin Marietta and computer studies by Sandia have shown that such precise timing provides for more uniform rock fragmentation, less fly rock, reduce4d ground shock, fewer ground contaminants and less dust. Cost studies have revealed that the use of precisely timed semiconductor bridges can provide a savings of $200,000 per site per year. In addition to Russia`s vast mineral resources, the Russian Mining Institute outside Moscow has had significant programs in rock fragmentation for many years. He anticipated that collaborative studies by the Institute and Sandia`s modellers would be a valuable resource for field studies.

Bickes, R.W. Jr.

1994-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
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141

Semiconductor Equipment and Materials International SEMI | Open Energy  

Open Energy Info (EERE)

Semiconductor Equipment and Materials International SEMI Semiconductor Equipment and Materials International SEMI Jump to: navigation, search Name Semiconductor Equipment and Materials International (SEMI) Place San Jose, California Zip 95134 2127 Product Global trade association, publisher and conference organiser representing the semiconductor and flat panel display equipment manufacturers. References Semiconductor Equipment and Materials International (SEMI)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Semiconductor Equipment and Materials International (SEMI) is a company located in San Jose, California . References ↑ "Semiconductor Equipment and Materials International (SEMI)" Retrieved from "http://en.openei.org/w/index.php?title=Semiconductor_Equipment_and_Materials_International_SEMI&oldid=350739

142

Taiwan Semiconductor Manufacturing Co Ltd TSMC | Open Energy Information  

Open Energy Info (EERE)

Semiconductor Manufacturing Co Ltd TSMC Semiconductor Manufacturing Co Ltd TSMC Jump to: navigation, search Name Taiwan Semiconductor Manufacturing Co Ltd (TSMC) Place Hsinchu, Taiwan Zip 300 Sector Solar Product Taiwan-based semiconductor company. The firm is also venturing into solar and LED production. References Taiwan Semiconductor Manufacturing Co Ltd (TSMC)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Taiwan Semiconductor Manufacturing Co Ltd (TSMC) is a company located in Hsinchu, Taiwan . References ↑ "Taiwan Semiconductor Manufacturing Co Ltd (TSMC)" Retrieved from "http://en.openei.org/w/index.php?title=Taiwan_Semiconductor_Manufacturing_Co_Ltd_TSMC&oldid=352012"

143

Method Of Transferring A Thin Crystalline Semiconductor Layer  

NLE Websites -- All DOE Office Websites (Extended Search)

Method Of Transferring A Thin Crystalline Semiconductor Layer Method Of Transferring A Thin Crystalline Semiconductor Layer Method Of Transferring A Thin Crystalline Semiconductor Layer A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. Available for thumbnail of Feynman Center (505) 665-9090 Email Method Of Transferring A Thin Crystalline Semiconductor Layer A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure

144

Coherent optical control of electronic excitations in functionalized semiconductor nanostructures  

Science Conference Proceedings (OSTI)

The feasibility of creating and manipulating coherent quantum states on surfaces offunctionalized semiconductor nanostructures is computationally investigated. Quantumdynamics simulations of electron-hole transfer between catechol molecules adsorbed ... Keywords: adsorbates, coherent control, semiconductors, wave-packet dynamics

L. G. C. Rego; S. G. Abuabara; V. S. Batista

2005-07-01T23:59:59.000Z

145

Business Case Slide 27: High-Value: Semiconductors - Basis for...  

NLE Websites -- All DOE Office Websites (Extended Search)

Semiconductors - Basis for Use Basis for use DUO2 has good electronic properties for semi-conductor applications Have made and tested a diode and transistor which appear superior...

146

Business Case Slide 25: High-Value: Semiconductors - Description  

NLE Websites -- All DOE Office Websites (Extended Search)

Semiconductors - Description Receipt of rare DUO crystals at ORNL Receipt of rare DUO2 crystals at ORNL Description Use DUO2 as a semiconductor material Computer CPU or RAM chips...

147

Lattice mismatched compound semiconductors and devices on silicon  

E-Print Network (OSTI)

III-V compound semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide-semiconductor field effect transistors (MOSFETs). However, the limited size of III-V substrates and ...

Yang, Li, Ph. D. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

148

Surface passivation process of compound semiconductor material using UV photosulfidation  

DOE Patents (OSTI)

A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

Ashby, Carol I. H. (Edgewood, NM)

1995-01-01T23:59:59.000Z

149

Metal Oxide Semiconductor Nanoparticles Open the Door to ...  

Using metal oxide semiconductor nanoparticles to target and control biological molecules could fuel medical breakthroughs in many areas, including ...

150

Method of physical vapor deposition of metal oxides on semiconductors  

DOE Patents (OSTI)

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Norton, David P. (Knoxville, TN)

2001-01-01T23:59:59.000Z

151

Organic conductive films for semiconductor electrodes  

DOE Patents (OSTI)

According to the present invention, improved electrodes overcoated with conductive polymer films and preselected catalysts are provided. The electrodes typically comprise an inorganic semiconductor overcoated with a charge conductive polymer film comprising a charge conductive polymer in or on which is a catalyst or charge-relaying agent.

Frank, Arthur J. (Lakewood, CO)

1984-01-01T23:59:59.000Z

152

Electrical Usage Characterization of Semiconductor Processing Tools  

E-Print Network (OSTI)

This paper presents the basic concepts in performing an energy and power audit of a semiconductor process tool. A protocol exists that fully describes these measurements and their use and applicability and it will be described. This protocol is currently being examined by SEMATECH for future publication. Example data will be presented showing the power, energy, and current load profiles of a typical tool.

Hinson, S. R.

2000-04-01T23:59:59.000Z

153

High resolution scintillation detector with semiconductor readout  

DOE Patents (OSTI)

A novel high resolution scintillation detector array for use in radiation imaging such as high resolution Positron Emission Tomography (PET) which comprises one or more parallelepiped crystals with at least one long surface of each crystal being in intimate contact with a semiconductor photodetector such that photons generated within each crystal by gamma radiation passing therethrough is detected by the photodetector paired therewith.

Levin, Craig S. (Santa Monica, CA); Hoffman, Edward J. (Los Angeles, CA)

2000-01-01T23:59:59.000Z

154

Semiconductor diode with external field modulation  

DOE Patents (OSTI)

A non-destructive-readout nonvolatile semiconductor diode switching device that may be used as a memory element is disclosed. The diode switching device is formed with a ferroelectric material disposed above a rectifying junction to control the conduction characteristics therein by means of a remanent polarization. The invention may be used for the formation of integrated circuit memories for the storage of information.

Nasby, Robert D. (Albuquerque, NM)

2000-01-01T23:59:59.000Z

155

Preparation of III-V semiconductor nanocrystals  

DOE Patents (OSTI)

Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

Alivisatos, A. Paul (Berkeley, CA); Olshavsky, Michael A. (Brunswick, OH)

1996-01-01T23:59:59.000Z

156

Optical temperature sensor using thermochromic semiconductors  

DOE Patents (OSTI)

Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

Kronberg, J.W.

1994-01-01T23:59:59.000Z

157

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

158

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

159

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

160

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

162

A Spintronic Semiconductor with Selectable Charge Carriers  

NLE Websites -- All DOE Office Websites (Extended Search)

A Spintronic Semiconductor with Selectable Charge Carriers Print A Spintronic Semiconductor with Selectable Charge Carriers Print Accentuating the Positive (or the Negative) Spintronics-a type of electronics that makes use of electron spin as well as charge-is already here to a certain extent. The discovery of giant magnetoresistance, a spin-based effect, has revolutionized the information storage industry. Beyond this, however, scientists envision the possibility of combining storage and processing functions in one integrated system. In electronics, processing is done using semiconductor materials like silicon and germanium that have the requisite properties to perform logical operations with both electrons (negative n-type charge carriers) and holes (positive p-type charge carriers). Thus, a spintronically desirable semiconductor would simultaneously have discrete spin-up and spin-down states as well as both positive and negative charge carriers. Strategies for developing spintronic semiconductors have been based on surface doping or on alloying, both of which have drawbacks such as chemical instability or reduced mobility. In BiTeI, however, electron and hole conduction is achieved without modifying the ideal crystal structure. One of the things discovered by Crepaldi et al. was that the electronic band structure of BiTeI bends in different ways near the surface depending on which layer is on top. That, in turn, means that the Fermi level (which determines a material's conductivity) can be located in either the valence band (for positive charge carriers) or the conduction band (for negative charge carriers). With techniques such as molecular-beam epitaxy and chemical vapor deposition, it is realistic to consider that regions with opposite band bending could be patterned on a substrate, opening new possibilities for the manipulation of spin-polarized states.

163

Semiconductor Manufacturing International Corp SMIC | Open Energy  

Open Energy Info (EERE)

Manufacturing International Corp SMIC Manufacturing International Corp SMIC Jump to: navigation, search Name Semiconductor Manufacturing International Corp (SMIC) Place Shanghai, Shanghai Municipality, China Zip 201203 Sector Solar Product Semiconductor group launching solar cell production from its recycled silicon wafers. Coordinates 31.247709°, 121.472618° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.247709,"lon":121.472618,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

164

Isotopically engineered semiconductors: from the bulk tonanostructures  

SciTech Connect

Research performed with semiconductors with controlled isotopic composition is evolving from the measurement of fundamental properties in the bulk to those measured in superlattices and nanostructures. This is driven in part by interests associated with the fields of 'spintronics' and quantum computing. In this topical review, which is dedicated to Prof. Abstreiter, we introduce the subject by reviewing classic and recent measurements of phonon frequencies, thermal conductivity, bandgap renormalizations, and spin coherence lifetimes in isotopically controlled bulk group IV semiconductors. Next, we review phonon properties measured in isotope heterostructures, including pioneering work made possible by superlattices grown by the group of Prof. Abstreiter. We close the review with an outlook on the exciting future possibilities offered through isotope control in 1, 2, and 3 dimensions that will be possible due to advances in nanoscience.

Ager III, Joel W.; Haller, Eugene E.

2006-04-07T23:59:59.000Z

165

Proximity charge sensing for semiconductor detectors  

SciTech Connect

A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.

Luke, Paul N; Tindall, Craig S; Amman, Mark

2013-10-08T23:59:59.000Z

166

Semiconductor P-I-N detector  

DOE Patents (OSTI)

A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

Sudharsanan, Rengarajan (53 Timber Line Dr., Nashua, NH 03062); Karam, Nasser H. (577 Lowell St., Lexington, MA 02173)

2001-01-01T23:59:59.000Z

167

Semiconductor junction formation by directed heat  

DOE Patents (OSTI)

The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100.degree.-1150.degree. C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.

Campbell, Robert B. (Pittsburgh, PA)

1988-03-24T23:59:59.000Z

168

GaTe semiconductor for radiation detection  

SciTech Connect

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

169

Fuzzy Logic Connectivity in Semiconductor Defect Clustering  

Science Conference Proceedings (OSTI)

In joining defects on semiconductor wafer maps into clusters, it is common for defects caused by different sources to overlap. Simple morphological image processing tends to either join too many unrelated defects together or not enough together. Expert semiconductor fabrication engineers have demonstrated that they can easily group clusters of defects from a common manufacturing problem source into a single signature. Capturing this thought process is ideally suited for fuzzy logic. A system of rules was developed to join disconnected clusters based on properties such as elongation, orientation, and distance. The clusters are evaluated on a pair-wise basis using the fuzzy rules and are joined or not joined based on a defuzzification and threshold. The system continuously re-evaluates the clusters under consideration as their fuzzy memberships change with each joining action. The fuzzy membership functions for each pair-wise feature, the techniques used to measure the features, and methods for improving the speed of the system are all developed. Examples of the process are shown using real-world semiconductor wafer maps obtained from chip manufacturers. The algorithm is utilized in the Spatial Signature Analyzer (SSA) software, a joint development project between Oak Ridge National Lab (ORNL) and SEMATECH.

Gleason, S.S.; Kamowski, T.P.; Tobin, K.W.

1999-01-24T23:59:59.000Z

170

Visible-wavelength semiconductor lasers and arrays  

DOE Patents (OSTI)

A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Schneider, Jr., Richard P. (Albuquerque, NM); Crawford, Mary H. (Albuquerque, NM)

1996-01-01T23:59:59.000Z

171

Wide Bandgap Semiconductors: Essential to Our Technology Future |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Wide Bandgap Semiconductors: Essential to Our Technology Future Wide Bandgap Semiconductors: Essential to Our Technology Future Wide Bandgap Semiconductors: Essential to Our Technology Future January 15, 2014 - 8:00am Addthis Learn how wide bandgap semiconductors could impact clean energy technology and our daily lives. | Video by Sarah Gerrity and Matty Greene, Energy Department. Dr. Ernest Moniz Dr. Ernest Moniz Secretary of Energy What are the key facts? North Carolina State University will lead the Energy Department's new manufacturing innovation institute for the next generation of power electronics, focusing on wide bandgap (WBG) semiconductors. Building America's leadership in WBG semiconductor manufacturing while driving down the cost of the technology could lead to more affordable products for businesses and consumers, billions of dollars in energy

172

Semiconductor and Materials Company Inc SAMCO | Open Energy Information  

Open Energy Info (EERE)

and Materials Company Inc SAMCO and Materials Company Inc SAMCO Jump to: navigation, search Name Semiconductor and Materials Company Inc (SAMCO) Place Kyoto, Kyoto, Japan Zip 612-8443 Sector Solar Product Japanese manufactruer of semiconductor and solar manufacturing equipment such as etching, deposition and cleaning systems. References Semiconductor and Materials Company Inc (SAMCO)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Semiconductor and Materials Company Inc (SAMCO) is a company located in Kyoto, Kyoto, Japan . References ↑ "Semiconductor and Materials Company Inc (SAMCO)" Retrieved from "http://en.openei.org/w/index.php?title=Semiconductor_and_Materials_Company_Inc_SAMCO&oldid=350738

173

Climate VISION: Private Sector Initiatives: Semiconductors: Resources and  

Office of Scientific and Technical Information (OSTI)

Semiconductor Industry Association (SIA) The Semiconductor Industry Association (SIA) is the premier trade association representing the U.S. semiconductor industry. Founded in 1977 by five microelectronics innovators, the SIA has grown to include over 100 companies that account for more than 83% of U.S.-based semiconductor production. The SIA provides a forum for domestic semiconductor companies to work collectively to advance the competitiveness of the $70 billion U.S. chip industry. Through its national and international network of chief executive officers and working committees, the SIA shapes public policy on issues important to the industry and provides a spectrum of services to help its members grow their businesses. World Semiconductor Council (WSC)

174

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2013-05-14T23:59:59.000Z

175

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Daejeon, KR); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Urbana, IL)

2011-07-19T23:59:59.000Z

176

Graded core/shell semiconductor nanorods and nanorod barcodes  

DOE Patents (OSTI)

Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

Alivisatos, A. Paul (Oakland, CA); Scher, Erik C. (San Francisco, CA); Manna, Liberato (Lecce, IT)

2010-12-14T23:59:59.000Z

177

Graded core/shell semiconductor nanorods and nanorod barcodes  

DOE Patents (OSTI)

Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

2013-03-26T23:59:59.000Z

178

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents (OSTI)

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Savoy, IL); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Urbana, IL)

2009-11-24T23:59:59.000Z

179

Guiding effect of quantum wells in semiconductor lasers  

Science Conference Proceedings (OSTI)

The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures). (semiconductor lasers. physics and technology)

Aleshkin, V Ya; Dikareva, Natalia V; Dubinov, A A; Zvonkov, B N; Karzanova, Maria V; Kudryavtsev, K E; Nekorkin, S M; Yablonskii, A N

2013-05-31T23:59:59.000Z

180

Climate VISION: Private Sector Initiatives: Semiconductors: Resources and  

Office of Scientific and Technical Information (OSTI)

Technical Information Technical Information Download Acrobat Reader Modeling China's Semiconductor Industry Fluorinated Compound Emissions and Drafting a Roadmap for Climate Protection. (PDF 101 KB) 14th Annual International Semiconductor Environment Safety & Health (ISESH) Conference in Jeju, Korea (June 2007) presentation by Scott Bartos, U.S. EPA. Estimating the Impact of Migration to Asian Foundry Production on Attaining the WSC 2010 PFC Reduction Goal. (PDF 458 KB) 11th Annual ISESH Conference in Makuhari, Japan (July 2004) presentation by Scott Bartos, U.S. EPA. Guidelines for Environmental Characterization of Semiconductor Equipment (PDF 361 KB) This document provides guidelines for suppliers of semiconductor processing and abatement equipment to characterize their equipment to meet

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

July 28, 2010, Guiding semiconductor research through collaborative engagement  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

The SRC ... The SRC ... Guiding semiconductor research through collaborative engagement Elizabeth J. Weitzman Exec. VP, SRC Exec. Director, Focus Center Research Program Semiconductor Research Corporation 2 ... Awarded Nat'l Medal of Technology Presidential Citation: "For building the world's largest and most successful university research force to support the ... semiconductor industry; For proving the concept of collaborative research as the first high-tech research consortium; and For creating the concept and methodology that evolved into the International Technology Roadmap for Semiconductors." 3 Key Attributes of SRC Research Entities 1. Accepted IP model. SRC's model has been

182

Strain tuning of topological band order in cubic semiconductors  

SciTech Connect

We theoretically explore the possibility of tuning the topological order of cubic diamond/zinc-blende semi- conductors with external strain. Based on a simple tight-binding model, we analyze the evolution of the cubic semiconductor band structure under hydrostatic or biaxial lattice expansion, by which a generic guiding princi- ple is established that biaxial lattice expansion can induce a topological phase transition of small band-gap cubic semiconductors via a band inversion and symmetry breaking at point. Using density functional theory cal- culations, we demonstrate that a prototype topological trivial semiconductor, InSb, is converted to a nontrivial topological semiconductor with a 2% 3% biaxial lattice expansion.

Feng, wanxiang [Chinese Academy of Sciences; Zhu, Wenguang [University of Tennessee, Knoxville (UTK); Weitering, Hanno [University of Tennessee, Knoxville (UTK); Stocks, George Malcolm [ORNL; Yao, yugui [Chinese Academy of Sciences; Xiao, Di [ORNL

2012-01-01T23:59:59.000Z

183

Understanding How Semiconductors Absorb Light | U.S. DOE Office...  

Office of Science (SC) Website

Understanding How Semiconductors Absorb Light Basic Energy Sciences (BES) BES Home About Research Facilities Science Highlights Benefits of BES Funding Opportunities Basic Energy...

184

Resonator for Coherent Addition of Semiconductor Laser Arrays ...  

Resonator for Coherent Addition of Semiconductor Laser Arrays and Applications for a Solar Pumped Laser Array Oak Ridge National Laboratory. Contact ...

185

II-V Compound Semiconductors - Microsystems Science, Technology...  

NLE Websites -- All DOE Office Websites (Extended Search)

researched, developed and delivered include: A wide variety of specialty semiconductor lasers Integrated VCSEL-RCPD circuits (vertical-cavity surface-emitting lasers,...

186

Metal Oxide Semiconductor Nanoparticles Pave the Way for ...  

Argonne researchers have developed a unique application of technology that involves using metal oxide semiconductor nanoparticles to target and control biological ...

187

Method for depositing high-quality microcrystalline semiconductor materials  

SciTech Connect

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Guha, Subhendu (Bloomfield Hills, MI); Yang, Chi C. (Troy, MI); Yan, Baojie (Rochester Hills, MI)

2011-03-08T23:59:59.000Z

188

Wide Bandgap Semiconductors for Clean Energy Workshop: Summary...  

NLE Websites -- All DOE Office Websites (Extended Search)

Facilitator: Foundry service is from Defense Advanced Research Projects Agency (DARPA), Metal Oxide Semiconductor Implementation Service (MOSIS). There is an evaluation of...

189

Production of 35S for a Liquid Semiconductor Betavoltaic  

DOE Green Energy (OSTI)

The specific energy density from radioactive decay is five to six orders of magnitude greater than the specific energy density in conventional chemical battery and fuel cell technologies. We are currently investigating the use of liquid semiconductor based betavoltaics as a way to directly convert the energy of radioactive decay into electrical power and potentially avoid the radiation damage that occurs in solid state semiconductor devices due to non-ionizing energy loss. Sulfur-35 was selected as the isotope for the liquid semiconductor demonstrations because it can be produced in high specific activity and it is chemically compatible with known liquid semiconductor media.

Meier, David E.; Garnov, A. Y.; Robertson, J. D.; Kwon, J. W.; Wacharasindhu, T.

2009-10-01T23:59:59.000Z

190

Argonne CNM News: HMapping Deformation in Buried Semiconductor...  

NLE Websites -- All DOE Office Websites (Extended Search)

CMOS performance. Nano-XRD allows for the first time in situ nanoscale mapping of lattice strain and tilt within a buried semiconductor layer at high spatial resolution...

191

Photophysics of Two-dimensional Semiconductor Nanoparticle/Liquid Interfaces  

Science Conference Proceedings (OSTI)

These studies have investigated the optical properties of two very different types of two-dimensional semiconductor nanoclusters and superlattices of these nanoclusters.

Kelley, David F.

2003-11-14T23:59:59.000Z

192

Hydrogen local vibrational modes in semiconductors  

DOE Green Energy (OSTI)

Following, a review of experimental techniques, theory, and previous work, the results of local vibrational mode (LVM) spectroscopy on hydrogen-related complexes in several different semiconductors are discussed. Hydrogen is introduced either by annealing in a hydrogen ambient. exposure to a hydrogen plasma, or during growth. The hydrogen passivates donors and acceptors in semiconductors, forming neutral complexes. When deuterium is substituted for hydrogen. the frequency of the LVM decreases by approximately the square root of two. By varying the temperature and pressure of the samples, the microscopic structures of hydrogen-related complexes are determined. For group II acceptor-hydrogen complexes in GaAs, InP, and GaP, hydrogen binds to the host anion in a bond-centered orientation, along the [111] direction, adjacent to the acceptor. The temperature dependent shift of the LVMs are proportional to the lattice thermal energy U(T), a consequence of anharmonic coupling between the LVM and acoustical phonons. In the wide band gap semiconductor ZnSe, epilayers grown by metalorganic chemical vapor phase epitaxy (MOCVD) and doped with As form As-H complexes. The hydrogen assumes a bond-centered orientation, adjacent to a host Zn. In AlSb, the DX centers Se and Te are passivated by hydrogen. The second, third, and fourth harmonics of the wag modes are observed. Although the Se-D complex has only one stretch mode, the Se-H stretch mode splits into three peaks. The anomalous splitting is explained by a new interaction between the stretch LVM and multi-phonon modes of the lattice. As the temperature or pressure is varied, and anti-crossing is observed between LVM and phonon modes.

McCluskey, M.D. [Univ. of California, Berkeley, CA (United States). Dept. of Physics]|[Lawrence Berkeley National Lab., CA (United States)

1997-06-01T23:59:59.000Z

193

III-Nitride Semiconductors for Photovoltaic Applications  

DOE Green Energy (OSTI)

Using a band-structure method that includes bandgap correction, we study the chemical trends of the bandgap variation in III-V semiconductors and predict that the bandgap for InN is 0.85 0.1 eV. This result suggests that InN and its III-nitride alloys are suitable for photovoltaic applications. The unusually small bandgap for InN is explained in terms of the atomic energies and the bandgap deformation potentials. The electronic and structural properties of the nitrides and their alloys are also provided.

Wei, S. H.

2003-05-01T23:59:59.000Z

194

GaAs photoconductive semiconductor switch  

DOE Patents (OSTI)

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

195

High power semiconductor laser diode arrays  

SciTech Connect

The cw optical power obtainable from semiconductor laser diodes has been extended to unprecedented levels in recent years through the use of multistripe arrays. By spreading out the optical power with more than 100 stripes, single-facet, cw output in exces of 5 Watts has been demonstrated, and 500 mW cw is now commercially available. Recent improvements to array performance include: arrays up to 1 cm wide that generates quasi-cw (150 usec pulse) output in excesss of 11 Watts, and a novel device structure which produces up to 215 mW cw in a single diffraction limited lobe.

Cross, P.S.

1986-08-15T23:59:59.000Z

196

Photocatalytic semiconductor clusters for fuel production  

DOE Green Energy (OSTI)

High quality crystalline, monodisperse nanometer-size semiconductor clusters were successfully grown using an inverse micellar synthesis process and their optical and structural properties were studied. Among the materials studied were PbS, FeS{sub 2}, MoS{sub 2}, CdS and related compounds. The results demonstrated strong electronic quantum confinement effects and broad tailorability of the bandgaps with decreasing cluster size, features that are important for the potential use of these materials as photocatalysts for solar fuel production and solar detoxification. The highlights of the work are included in an Executive Summary.

Wilcoxon, J.P.; Bliss, D.E.; Martin, J.E. [and others

1995-10-01T23:59:59.000Z

197

Fully Integrated Complementary Metal Oxide Semiconductor (CMOS) Bio-Assay Platform  

E-Print Network (OSTI)

Oxide Semiconductor (CMOS) Bio-Assay Platform by OctavianOxide Semiconductor (CMOS) Bio-Assay Platform by OctavianOxide Semiconductor (CMOS) Bio-Assay Platform by Octavian

Florescu, Octavian

2010-01-01T23:59:59.000Z

198

Distributed Quantum Computation Architecture Using Semiconductor Nanophotonics  

E-Print Network (OSTI)

In a large-scale quantum computer, the cost of communications will dominate the performance and resource requirements, place many severe demands on the technology, and constrain the architecture. Unfortunately, fault-tolerant computers based entirely on photons with probabilistic gates, though equipped with "built-in" communication, have very large resource overheads; likewise, computers with reliable probabilistic gates between photons or quantum memories may lack sufficient communication resources in the presence of realistic optical losses. Here, we consider a compromise architecture, in which semiconductor spin qubits are coupled by bright laser pulses through nanophotonic waveguides and cavities using a combination of frequent probabilistic and sparse determinstic entanglement mechanisms. The large photonic resource requirements incurred by the use of probabilistic gates for quantum communication are mitigated in part by the potential high-speed operation of the semiconductor nanophotonic hardware. The system employs topological cluster-state quantum error correction for achieving fault-tolerance. Our results suggest that such an architecture/technology combination has the potential to scale to a system capable of attacking classically intractable computational problems.

Rodney Van Meter; Thaddeus D. Ladd; Austin G. Fowler; Yoshihisa Yamamoto

2009-06-15T23:59:59.000Z

199

Visible-wavelength semiconductor lasers and arrays  

DOE Patents (OSTI)

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

Schneider, R.P. Jr.; Crawford, M.H.

1996-09-17T23:59:59.000Z

200

Coated semiconductor devices for neutron detection  

DOE Green Energy (OSTI)

A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.

Klann, Raymond T. (Bolingbrook, IL); McGregor, Douglas S. (Whitmore Lake, MI)

2002-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Photonic switching devices based on semiconductor nanostructures  

E-Print Network (OSTI)

Squeezing and guiding light into semiconductor nanostructures delivers revolutionary concepts of photonic devices, which may offer a practical pathway towards power-efficient optical networks. In this review, we consider photonic switches using semiconductor quantum dots (QDs) and photonic cavities. By intuitively introducing in a field enhancement factor, the optical nonlinearity of nano-photonic switches can be understood and this has shown their unique features to dramatically improve the power-density/speed limitation that has lain in conventional photonic switches for decades. In addition, the power consumption has been reduced due to the atom-like characterization of QDs as well as the nano-size footprint of photonic cavities. Based on this theoretical perspective, the current progress of QD/cavity switches is reviewed in terms of various optical nonlinearities which have been employed to demonstrate photonic switching at the nanoscale. Emerging functionalities enabled by cavity nonlinear effects such as the wavelength tuning and Purcell-factor tuning have been further introduced.

Chao-Yuan Jin; Osamu Wada

2013-08-11T23:59:59.000Z

202

Dilute magnetic semiconductors in spin-polarized electronics (invited)  

SciTech Connect

Dilute magnetic semiconductors have proven to be very useful in building an all-semiconductor platform for spintronics{emdash}so far they provide the only viable route to establish spin-polarized current injection into a nonmagnetic semiconductor. The reasons for this become apparent from a simple spin-channel model, which predicts that spin injection into a semiconductor can, within linear response, only readily be achieved from a ferromagnetic injector that has: (i) a resistivity that is comparable to the semiconductor and (ii) preferably is 100% spin polarized. Both of these criteria can be met in magnetic semiconductors, but (so far) are hard to achieve using other materials. Experimentally, we demonstrate how dilute magnetic II{endash}VI semiconductors can be used to inject a strongly (up to 90%) spin-polarized current into a light emitting diode. In addition, we discuss the implications of the spin-channel model for the observation of giant magnetoresistance-like effects in the magnetoresistance of an all-semiconductor device. {copyright} 2001 American Institute of Physics.

Schmidt, Georg; Molenkamp, Laurens W.

2001-06-01T23:59:59.000Z

203

Semiconductor device design using the BiMADS algorithm  

Science Conference Proceedings (OSTI)

Designing high-performance semiconductor devices is a complex optimization problem, which is characterized by multiple and, often, conflicting objectives. In this research work, we introduce a multi-objective optimization design approach based on the ... Keywords: Diodes, Drift-diffusion, Energy-transport, MESFETs, MOSFETs, Optimization, Semiconductors

Giovanni Stracquadanio, Vittorio Romano, Giuseppe Nicosia

2013-06-01T23:59:59.000Z

204

Study on Water-Cooled Solar Semiconductor Air Conditioner  

Science Conference Proceedings (OSTI)

Water-cooled solar semiconductor air conditioner was designed. Relevant calculation was made to determine the room's cooling load, which export the solar panels and battery capacity, followed by selection of CNC matcher. Development work also involves ... Keywords: solar energy, peltier effect, semiconductor air conditioner

Dong Zhi-Ming; Chang Ji-Bin; Xiang Li-Juan; Zhou Xue-Bin

2012-04-01T23:59:59.000Z

205

Interesting Electronic and Dynamic Properties of Quantum Dot Quantum Wells and other Semiconductor Nanocrystal Heterostructures .  

E-Print Network (OSTI)

??Some interesting electronic and dynamic properties of semiconductor nanocrystal heterostructures have been investigated using various spectroscopic methods. Semiconductor nanocrystal heterostructures were prepared using colloidal synthesis (more)

Schill, Alexander Wilhem

2006-01-01T23:59:59.000Z

206

High-Throughput Transfer Imprinting for Organic Semiconductors  

E-Print Network (OSTI)

Development of nanoimprint lithography(NIL) has enabled high-throughput and high-resolution patterning over the optical limitation. In recent years, thermal nanoimprint has been used to directly pattern functional materials such as organic semiconductors because heat and pressure used in thermal nanoimprint do not damage functional materials. However, issues such as residual layer removal and mold contamination still limit the application of nanoimprint for organic semiconductor patterning. In this work, nanoimprint-based transfer imprinting of organic semiconductor is studied. In the same time the suggested technique is simulated with COMSOL multi-physics simulator to understand its mechanism. This transfer printing technique utilize thermal nanoimprint scheme to enable residual-layer-free patterning of organic semiconductors without mold contamination. The transfer imprinting technique is amenable to roll-to-roll process for high-throughput patterning of organic semiconductors for low-cost organic electronic applications.

Choo, Gihoon

2013-08-01T23:59:59.000Z

207

Hybrid Semiconductors for Hardier Electronics and Optoelectronics? |  

NLE Websites -- All DOE Office Websites (Extended Search)

Unveiling the Molecular Structure of the Target of Many Drugs Unveiling the Molecular Structure of the Target of Many Drugs A New Scenario for First Life on Earth Surface Orbital 'Roughness' in Colossal Magnetoresistive Oxide Different Roads Toward Quantum Criticality Orbital Reconstruction at a Complex Oxide Interface Science Highlights Archives: 2013 | 2012 | 2011 | 2010 2009 | 2008 | 2007 | 2006 2005 | 2004 | 2003 | 2002 2001 | 2000 | 1998 | Subscribe to APS Science Highlights rss feed Hybrid Semiconductors for Hardier Electronics and Optoelectronics? DECEMBER 21, 2007 Bookmark and Share The crystal structure of β-ZnTe(en)0:5, determined by single-crystal x-ray diffraction. Two-monolayerthick ZnTe slabs are interconnected by ethylenediamine (C2N2H8) molecules bonded to zinc atoms. Zn-Green, Te-Red, N-Blue,and C-Gray. Hydrogen atoms are omitted for clarity.

208

Elements of Doping Engineering in Semiconductors  

DOE Green Energy (OSTI)

Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors. The dependencies of the defect formation enthalpy on the atomic chemical potentials and on the electron Fermi energy are demonstrated. These dependencies, in particular on the Fermi energy, lead to spontaneous formation of charge-compensating defects that can limit doping. Experimental data compiled for III-V, II-VI, and I-III-VI2 compounds support this view and further provide insight into the connections among different host materials. We argue that what matters is not the magnitude of the band gap that determines the dopability of a material, but rather, the relative position of the conduction-band minimum (in the case of n-doping) and the valence-band maximum (in the case of p-doping) with respect to vacuum.

Zhang, S. B.; Wei, S.; Zunger, A.

1998-11-09T23:59:59.000Z

209

Internal cooling in a semiconductor laser diode  

E-Print Network (OSTI)

AbstractA thermal model of a diode laser structure is developed which includes a bipolar thermoelectric term not included in previous models. It is shown that heterostructure band offsets can be chosen so that there are thermoelectric cooling sources near the active region; this method of cooling is internal to the device itself, as opposed to temperature stabilization schemes which employ an external cooler. A novel laser structure is proposed that is capable of internal cooling in the Ga1 In As Sb1 GaSb material system with = 2 64 m. Index TermsElectrothermal effects, lasers, laser thermal factors, photothermal effects, semiconductor lasers, thermionic emission, thermionic energy conversion, thermoelectric devices, thermoelectric energy conversion, thermoelectricity. Fig. 1. Band structure and thermoelectric heat source distribution for (a) and (b) conventional SCH, and (c) and (d) ICICLE.

K. P. Pipe; R. J. Ram; A. Shakouri

1995-01-01T23:59:59.000Z

210

Exciton binding energy in semiconductor quantum dots  

Science Conference Proceedings (OSTI)

In the adiabatic approximation in the context of the modified effective mass approach, in which the reduced exciton effective mass {mu} = {mu}(a) is a function of the radius a of the semiconductor quantum dot, an expression for the exciton binding energy E{sub ex}(a) in the quantum dot is derived. It is found that, in the CdSe and CdS quantum dots with the radii a comparable to the Bohr exciton radii a{sub ex}, the exciton binding energy E{sub ex}(a) is substantially (respectively, 7.4 and 4.5 times) higher than the exciton binding energy in the CdSe and CdS single crystals.

Pokutnii, S. I., E-mail: Pokutnyi_Sergey@inbox.ru [National Academy of Sciences of Ukraine, G.V. Kurdjumov Institute for Metal Physics (Ukraine)

2010-04-15T23:59:59.000Z

211

Ion Trap in a Semiconductor Chip  

E-Print Network (OSTI)

The electromagnetic manipulation of isolated atoms has led to many advances in physics, from laser cooling and Bose-Einstein condensation of cold gases to the precise quantum control of individual atomic ion. Work on miniaturizing electromagnetic traps to the micrometer scale promises even higher levels of control and reliability. Compared with 'chip traps' for confining neutral atoms, ion traps with similar dimensions and power dissipation offer much higher confinement forces and allow unparalleled control at the single-atom level. Moreover, ion microtraps are of great interest in the development of miniature mass spectrometer arrays, compact atomic clocks, and most notably, large scale quantum information processors. Here we report the operation of a micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. We confine, laser cool, and measure heating of a single 111Cd+ ion in an integrated radiofrequency trap etched from a doped gallium arsenide (GaAs) heterostructure.

D. Stick; W. K. Hensinger; S. Olmschenk; M. J. Madsen; K. Schwab; C. Monroe

2006-01-09T23:59:59.000Z

212

Spin Splitting and Spin Current in Strained Bulk Semiconductors  

SciTech Connect

We present a theory for two recent experiments in bulk strained semiconductors and show that a new, previously overlooked, strain spin-orbit coupling term may play a fundamental role. We propose simple experiments that could clarify the origin of strain-induced spin-orbit coupling terms in inversion asymmetric semiconductors. We predict that a uniform magnetization parallel to the electric field will be induced in the samples studied in for specific directions of the applied electric field. We also propose special geometries to detect spin currents in strained semiconductors.

Bernevig, B.Andrei; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

2010-01-15T23:59:59.000Z

213

Varian Semiconductor Equipment Associates Inc VSEA | Open Energy  

Open Energy Info (EERE)

Varian Semiconductor Equipment Associates Inc VSEA Varian Semiconductor Equipment Associates Inc VSEA Jump to: navigation, search Name Varian Semiconductor Equipment Associates Inc (VSEA) Place Gloucester, Massachusetts Zip 1930 Sector Services Product Massachusetts-based, designs, manufactures, and services semiconductor processing equipment used in the fabrication of integrated circuits. Coordinates 37.413962°, -76.526305° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.413962,"lon":-76.526305,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

214

Ramgraber Semiconductor Equipment GmbH | Open Energy Information  

Open Energy Info (EERE)

Ramgraber Semiconductor Equipment GmbH Ramgraber Semiconductor Equipment GmbH Jump to: navigation, search Name Ramgraber Semiconductor Equipment GmbH Place Brunnthal, Germany Zip 85649 Sector Solar Product Makes semiconductor processing equipment, including solar cell manufacturing lines. Coordinates 48.006898°, 11.684687° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":48.006898,"lon":11.684687,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

215

Argonne licenses diamond semiconductor discoveries to AKHAN Technologies |  

NLE Websites -- All DOE Office Websites (Extended Search)

licenses diamond semiconductor discoveries to AKHAN Technologies licenses diamond semiconductor discoveries to AKHAN Technologies By Joseph Bernstein * By Jared Sagoff * March 4, 2013 Tweet EmailPrint LEMONT, Ill. - The U.S. Department of Energy's Argonne National Laboratory announced today that the laboratory has granted AKHAN Technologies exclusive diamond semiconductor application licensing rights to breakthrough low-temperature diamond deposition technology developed by Argonne's Center for Nanoscale Materials (CNM). The Argonne-developed technology allows for the deposition of nanocrystalline diamond on a variety of wafer substrate materials at temperatures as low as 400 degrees Celsius. The combination of the Argonne's low-temperature diamond technology with AKHAN's Miraj Diamond(tm) process represents the state of the art in diamond semiconductor

216

Semiconductor nanocrystals : synthesis, mechanisms of formation, and applications in biology  

E-Print Network (OSTI)

The primary focus of this thesis is the synthesis and applications of semiconductor nanocrystals, or quantum dots (QDs). Novel synthetic routes to ternary 1-III-VI QDs are presented, and we report the first highly luminescent ...

Allen, Peter M. (Peter Matthew)

2010-01-01T23:59:59.000Z

217

AlGaN/GaN-based power semiconductor switches  

E-Print Network (OSTI)

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

218

Spin polarized transport effects in III-V semiconductor heterostructures  

Science Conference Proceedings (OSTI)

In the field of spintronics, GaMnAs, a ferromagnetic semiconductor, offers many advantages to study tunnel magnetotransport properties when used as an electrode. The complexity of the transport mechanisms associated with spin orbit coupled states make ...

J.-M. George

2005-07-01T23:59:59.000Z

219

Printable semiconductor structures and related methods of making and assembling  

DOE Patents (OSTI)

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

2011-10-18T23:59:59.000Z

220

Printable semiconductor structures and related methods of making and assembling  

DOE Patents (OSTI)

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

2010-09-21T23:59:59.000Z

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Printable semiconductor structures and related methods of making and assembling  

DOE Patents (OSTI)

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

2013-03-12T23:59:59.000Z

222

Colloidal crystal formation in a semiconductor quantum plasma  

Science Conference Proceedings (OSTI)

The static shielding and the far-field dynamical oscillatory wake potentials in an ion-implanted piezoelectric semiconductor with colloid ions as test particles have been investigated in detail. The dielectric response function of the semiconductor is contributed by the quantum effect of electrons through the Bohm potential and lattice electron-phonon coupling effects. It is found that the quantum effect causes tighter binding of the electrons reducing the quantum Debye shielding length and the effective length of the wake potential to several angstroms. Hence, a quasiquantum lattice of colloid ions can be formed in the semiconductor in the quantum scales giving rise to drastic modifications of the ion-implanted semiconductor properties.

Zeba, I.; Uzma, Ch.; Jamil, M.; Salimullah, M. [Department of Physics, GC University, 54000 Lahore (Pakistan); Shukla, P. K. [Theoretische Physik IV, Ruhr-Universitaet Bochum, D-44780 Bochum (Germany)

2010-03-15T23:59:59.000Z

223

Characterization of Novel Semiconductor Alloys for Band Gap Engineering  

E-Print Network (OSTI)

parameter for the lower-energy matrix like band. The fullthe optical matrix is constant with energy and given by: 2 menergy of the host semiconductor. Diagalization of the matrix

Broesler, Robert Joseph

2010-01-01T23:59:59.000Z

224

Improving reuse of semiconductor equipment through benchmarking, standardization, and automation  

E-Print Network (OSTI)

The 6D program at Intel Corporation was set up to improve operations around capital equipment reuse, primarily in their semiconductor manufacturing facilities. The company was faced with a number of challenges, including ...

Silber, Jacob B. (Jacob Bradley)

2006-01-01T23:59:59.000Z

225

Business Case Slide 26: High-Value: Semiconductors - Description...  

NLE Websites -- All DOE Office Websites (Extended Search)

(cont.) Previous Slide Next Slide Table of Contents High-Value: Semiconductors - Description (cont.) Measuring the photo-voltaic properties of a DUO2 diode at NREL Measuring the...

226

A New Earth-Abundant Semiconductor for Solar Energy Conversion  

Science Conference Proceedings (OSTI)

Presentation Title, G2, ZnSnN2: A New Earth-Abundant Semiconductor for Solar Energy Conversion. Author(s), Lise Lahourcade, Naomi C Coronel, Harry A...

227

Ultrafast nonlinear optical properties of passive and active semiconductor devices  

E-Print Network (OSTI)

Nonlinear optical properties and ultrafast carrier dynamics of slab-coupled optical waveguide amplifiers, silicon nanowaveguides, and III-V semiconductor saturable Bragg reflectors are studied. The limits imposed by two ...

Motamedi, Ali Reza

2011-01-01T23:59:59.000Z

228

A thermovoltaic semiconductor device including a plasma filter  

DOE Patents (OSTI)

A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential are disclosed. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

Baldasaro, Paul F.

1997-12-01T23:59:59.000Z

229

Conductive layer for biaxially oriented semiconductor film growth  

DOE Patents (OSTI)

A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

Findikoglu, Alp T. (Los Alamos, NM); Matias, Vladimir (Santa Fe, NM)

2007-10-30T23:59:59.000Z

230

Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process  

DOE Patents (OSTI)

A process for the formation of shaped Group II-VI semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

Alivisatos, A. Paul (Oakland, CA); Peng, Xiaogang (Fayetteville, AR); Manna, Liberato (Palo del Colle, IT)

2001-01-01T23:59:59.000Z

231

Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process  

DOE Patents (OSTI)

A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

Alivisatos, A. Paul (Oakland, CA); Peng, Xiaogang (Fayetteville, AR); Manna, Liberato (Palo del Colle, IT)

2001-01-01T23:59:59.000Z

232

WA_07_016_OSRAM_SYLVANIA_Waiver_of_Patent_Rights_Under_a_DOE...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

WA04016MACKTRUCKSWaiverofPatentRightsunderNRELSub.pdf WA06016BPSOLARINTERNATIONALWaiverofPatentRightsUnd.pdf WA05031OSRAMSYLVANIAPRODUCTSWaiv...

233

Gas fixation solar cell using gas diffusion semiconductor electrode  

SciTech Connect

A gas diffusion semiconductor electrode and solar cell and a process for gaseous fixation, such as nitrogen photoreduction, CO/sub 2/ photoreduction and fuel gas photo-oxidation are described. The gas diffusion photosensitive electrode has a central electrolyte porous matrix with an activated semiconductor material on one side adapted to be in contact with an electrolyte and a hydrophobic gas diffusion region on the opposite side adapted to be in contact with a supply of molecular gas.

Ang, P.G.; Sammells, A.F.

1980-12-23T23:59:59.000Z

234

Electroluminescence in ion gel gated organic polymer semiconductor transistors  

E-Print Network (OSTI)

emission in ion gel gated, thin film organic semiconductor tran- sistors and investigates the light emission mechanism behind these devices. We report that ion gel gated organic polymer semiconductor transistors emit light when the drain source volt- age... the organic light emitting devices become mainstream, there are several challenges that need to be resolved and current research focus is to ad- dress those challenges. One particular challenge is relatively high operating volt- ages of light emitting organic...

Bhat, Shrivalli

2011-07-12T23:59:59.000Z

235

Thermally robust semiconductor optical amplifiers and laser diodes  

DOE Patents (OSTI)

A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

Dijaili, Sol P. (Moraga, CA); Patterson, Frank G. (Danville, CA); Walker, Jeffrey D. (El Cerrito, CA); Deri, Robert J. (Pleasanton, CA); Petersen, Holly (Manteca, CA); Goward, William (Antioch, CA)

2002-01-01T23:59:59.000Z

236

Electron transfer at sensitized semiconductor electrodes  

DOE Green Energy (OSTI)

Electron transfer from the excited state of sensitizing dyes to the conduction band of semiconductors has been studied through photoelectrochemical techniques. Two systems were analyzed in detail: rhodamine B on ZnO and rose bengal on TiO/sub 2/. Prior to electrochemical experimentation, the adsorption characteristics of these dyes were investigated using ZnO, ZnS, and TiO/sub 2/ single crystals as substrates. Absorbance measurements of the adsorbed dye were taken as a function of the solution concentration of the dye. Adsorption isotherms heats of adsorption were also established; they were similar to literature data reported for adsorption of these dyes on powdered substrates. Using the absorbance data, the quantum efficiency for photoinjection of electrons from rhodamine B into a ZnO electrode was determined to be 2.7 x 10/sup -2/. This value was independent of the dye surface concentration down to 50% coverage of the electrode. With the assumption that not all of the rhodamine B adsorbed on the electrode has the same rate of electron injection, a kinetic model for the time decay of the photocurrent was developed; data were analyzed according to this theory. A rate constant for photoreduction of the adsorbed dye was determined for the reducing agents. 86 references.

Spitler, M.T.

1977-03-01T23:59:59.000Z

237

Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes  

SciTech Connect

A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) an affinity molecule linked to the semiconductor nanocrystal. The semiconductor nanocrystal is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Exposure of the semiconductor nanocrystal to excitation energy will excite the semiconductor nanocrystal causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

2008-01-01T23:59:59.000Z

238

Optical Properties and Potential Applications of Doped Semiconductor Nanoparticles  

SciTech Connect

Recent studies on the optical properties, in particular luminescence, of a variety of doped semiconductor nanoparticles are reviewed. The effects of quantum confinement, temperature, and pressure on luminescent properties are discussed. In addition, electroluminescence, cathodoluminescence, magnetoluminescence and related applications involving doped semiconductor nanoparticles are presented. A new phenomenon, upconversion luminescence of doped nanoparticles, is reviewed and its potential applications are discussed. While more research efforts are necessary in order to fully understand the fundamentals and explore the great technological potential behind doped nanoparticles, recent results already show that this is a new and exciting field with applications in many fields. In particular, the emerging field of ''spintronics'', where spin states are exploited in analogy to conventional electronic states, is discussed and the advantages of using doped semiconductor nanoparticles are elucidated.

Chen, Wei; Zhang, Jin Z.; Joly, Alan G.

2004-11-08T23:59:59.000Z

239

Efficient semiconductor light-emitting device and method  

DOE Patents (OSTI)

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Choquette, Kent D. (Albuquerque, NM); Lear, Kevin L. (Albuquerque, NM); Schneider, Jr., Richard P. (Albuquerque, NM)

1996-01-01T23:59:59.000Z

240

Efficient semiconductor light-emitting device and method  

DOE Patents (OSTI)

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

1996-02-20T23:59:59.000Z

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Wavelength-resonant surface-emitting semiconductor laser  

DOE Patents (OSTI)

A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

Brueck, Steven R. J. (Albuquerque, NM); Schaus, Christian F. (Albuquerque, NM); Osinski, Marek A. (Albuquerque, NM); McInerney, John G. (Cedar Crest, NM); Raja, M. Yasin A. (Albuquerque, NM); Brennan, Thomas M. (Albuquerque, NM); Hammons, Burrell E. (Tijeras, NM)

1989-01-01T23:59:59.000Z

242

OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES  

Science Conference Proceedings (OSTI)

This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

Grant, C D; Zhang, J Z

2007-09-28T23:59:59.000Z

243

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents (OSTI)

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

244

Below-bandgap excitation of bulk semiconductors by twisted light  

E-Print Network (OSTI)

I theoretically investigate the response of bulk semiconductors to excitation by twisted light below the energy bandgap. To this end, I modify a well-known model of light-semiconductor interaction to account for the conservation of the light's momentum. I show that the excited states can be thought of as a superposition of slightly perturbed exciton states undergoing a complex center-of-mass motion. In addition, the absorption would occur at a slightly shifted energy (compared to plane waves) and would exhibit complex spatial patterns in the polarization and current.

Quinteiro, G F

2013-01-01T23:59:59.000Z

245

Low temperature production of large-grain polycrystalline semiconductors  

SciTech Connect

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Naseem, Hameed A. (Fayetteville, AR); Albarghouti, Marwan (Loudonville, NY)

2007-04-10T23:59:59.000Z

246

Toward a Unified Treatment of Electronic Processes in Organic Semiconductors  

DOE Green Energy (OSTI)

A quantitative study of n-type doping in highly crystalline organic semiconductor films establishes the predominant influence of electrostatic forces in these low-dielectric materials. Based on these findings, a self-consistent model of doped (purposely or not) organic semiconductors is proposed in which: (1) the equilibrium free carrier density, nf, is a small fraction of the total charge density; (2) a superlinear increase in conductivity with doping density is universal; (3) nf increases with applied electric field; and (4) the carrier mobility is field-dependent regardless of crystallinity.

Gregg. B.A.

2005-01-01T23:59:59.000Z

247

System design and simulation of constant temperature box using semiconductor refrigeration device  

Science Conference Proceedings (OSTI)

This paper presents the variation law of temperature in three-dimensional space, which is cooled by the refrigeration provided by the cold side of a semiconductor. The mathematical model of the temperature field of the semiconductor refrigeration ... Keywords: constant temperature box, forced convection, mathematical modelling, numerical simulation, semiconductor refrigeration, system design

Hui Zhang; Kuang-Chao Fan; Jun Wang

2010-03-01T23:59:59.000Z

248

Ados Co Ltd Dong Yang Semiconductor | Open Energy Information  

Open Energy Info (EERE)

Ados Co Ltd Dong Yang Semiconductor Ados Co Ltd Dong Yang Semiconductor Jump to: navigation, search Name Ados Co Ltd (Dong Yang Semiconductor) Place Seoul, Seoul, Korea (Republic) Product Korean manufacturer of semiconductors; through Ersol's technology, will develop PV plants and begin to roll out crystalline silicon wafers and cells by H2 2007. Coordinates 37.557121°, 126.977379° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.557121,"lon":126.977379,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

249

Method of depositing wide bandgap amorphous semiconductor materials  

DOE Patents (OSTI)

A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.

Ellis, Jr., Frank B. (Princeton Junction, NJ); Delahoy, Alan E. (Rocky Hill, NJ)

1987-09-29T23:59:59.000Z

250

Generator of pumping pulses for powerful semiconductor lasers  

Science Conference Proceedings (OSTI)

The generator of electric and optic pulses are built using powerful MOS transistors and an ILPI-103 semiconductor laser generates pumping pulses with an amplitude of 15 A and optic pulses with a duration of 9 to 30 nsec at a repetition rate of up to 90 kHz. The output signal is TTL. The device is designed for open optic communication lines.

An, V.I.; Kolesnikov, Yu.Yu. [Voronezh Scientific Research Institute of Communications, Voronezh (Russian Federation)

1995-06-01T23:59:59.000Z

251

[Electron transfer rates at semiconductor/liquid interfaces]. Progress report  

DOE Green Energy (OSTI)

Work has focused on several aspects of the fundamental chemistry and physics semiconductor/liquid junction behavior. These projects have been directed primarily towards GaAs/liquid contacts, because GaAs/liquid systems provide high energy conversion efficiencies and offer an opportunity to gain mechanistic understanding of the factors that are important to control in an efficient photoelectrochemical energy conversion system.

Lewis, N.S.

1992-08-01T23:59:59.000Z

252

(Electron transfer rates at semiconductor/liquid interfaces)  

DOE Green Energy (OSTI)

Work has focused on several aspects of the fundamental chemistry and physics semiconductor/liquid junction behavior. These projects have been directed primarily towards GaAs/liquid contacts, because GaAs/liquid systems provide high energy conversion efficiencies and offer an opportunity to gain mechanistic understanding of the factors that are important to control in an efficient photoelectrochemical energy conversion system.

Lewis, N.S.

1992-01-01T23:59:59.000Z

253

Electronic displays using optically pumped luminescent semiconductor nanocrystals  

DOE Patents (OSTI)

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Weiss, Shimon (Pinole, CA); Schlamp, Michael C. (Plainsboro, NJ); Alivisatos, A. Paul (Oakland, CA)

2011-09-27T23:59:59.000Z

254

Quantum Optics: Colloidal Fluorescent Semiconductor Nanocrystals (Quantum Dots)  

E-Print Network (OSTI)

U ncorrected Proof Chapter 3 Quantum Optics: Colloidal Fluorescent Semiconductor Nanocrystals (Quantum Dots) in Single-Molecule Detection and Imaging Laurent A. Bentolila, Xavier Michalet, and Shimon quantum dots (QDs), have emerged as new powerful fluorescent probes for in vitro and in vivo biological

Michalet, Xavier

255

User experience research in the semiconductor factory: a contradiction?  

Science Conference Proceedings (OSTI)

No doubt, user experience (UX) has become of high relevance within the HCI community. Within this paper, we present initial results from a qualitative study on UX in the factory context, more precisely in a semiconductor factory. We highlight the challenges ... Keywords: factory context, probing, user experience, user study

Marianna Obrist; Wolfgang Reitberger; Daniela Wurhofer; Florian Frster; Manfred Tscheligi

2011-09-01T23:59:59.000Z

256

The new -NMR facility at TRIUMF and applications in semiconductors  

E-Print Network (OSTI)

The new -NMR facility at TRIUMF and applications in semiconductors K.H. Chow a, Z. Salman b R facililty for conducting beta-detected nuclear magnetic resonance (-NMR) investigations of condensed matter facility are described, and some preliminary results on 8Li+ in GaAs are presented. Key words: -NMR

Baartman, Richard Abram

257

Chemosensors, biosensors, and microsystems based on standard semiconductor technology (CMOS)  

Science Conference Proceedings (OSTI)

Microfabrication techniques and, in particular, complementary metal oxide semiconductor (CMOS) technology have been used to devise chemosensors, biosensors, and microsystems in a generic approach. Examples of micromachined bio/chemosensors, such as cantilevers ... Keywords: CMOS, bioelectronics, biomicrosystem, biosensor, cells, chemical sensor, microelectronics

Andreas Hierlemann

2007-02-01T23:59:59.000Z

258

Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes  

SciTech Connect

A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

2004-03-02T23:59:59.000Z

259

Semiconductor nanocrystal probes for biological applications and process for making and using such probes  

DOE Patents (OSTI)

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Weiss, Shimon (Pinole, CA); Bruchez, Marcel (Newark, CA); Alivisatos, Paul (Oakland, CA)

2011-12-06T23:59:59.000Z

260

Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes  

DOE Patents (OSTI)

A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in he probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

2002-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Semiconductor nanocrystal probes for biological applications and process for making and using such probes  

SciTech Connect

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

2012-10-16T23:59:59.000Z

262

Methods of use of semiconductor nanocrystal probes for treating a material  

Science Conference Proceedings (OSTI)

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Weiss, Shimon (Los Angeles, CA); Bruchez, Marcel (Belmont, CA); Alivisatos, Paul (Oakland, CA)

2007-04-27T23:59:59.000Z

263

Semiconductor nanocrystal probes for biological applications and process for making and using such probes  

SciTech Connect

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Weiss, Shimon (Pinole, CA); Bruchez, Marcel (Newark, CA); Alivisatos, Paul (Oakland, CA)

2011-12-20T23:59:59.000Z

264

Method of plasma etching GA-based compound semiconductors  

DOE Patents (OSTI)

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Qiu, Weibin; Goddard, Lynford L.

2013-01-01T23:59:59.000Z

265

Method of plasma etching Ga-based compound semiconductors  

SciTech Connect

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Qiu, Weibin; Goddard, Lynford L.

2012-12-25T23:59:59.000Z

266

Semiconductor Nanocrystals-Based White Light Emitting Diodes  

Science Conference Proceedings (OSTI)

In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid state lighting, such as white light emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement could cut the ever-increasing energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, we highlight the recent progress in semiconductor nanocrystals-based WLEDs, compare different approaches for generating white light, and discuss the benefits and challenges of the solid state lighting technology.

Dai, Quanqin [ORNL; Hu, Michael Z. [ORNL; Duty, Chad E [ORNL

2010-01-01T23:59:59.000Z

267

Semiconductor-Nanocrystals-Based White Light-Emitting Diodes  

Science Conference Proceedings (OSTI)

In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white lightemitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

Dai, Quanqin [ORNL; Duty, Chad E [ORNL; Hu, Michael Z. [ORNL

2010-01-01T23:59:59.000Z

268

Method for mapping charge pulses in semiconductor radiation detectors  

Science Conference Proceedings (OSTI)

An efficient method for determining the distribution of charge pulses produced by semiconductor detectors is presented. The method is based on a quasi-steady-state model for semiconductor detector operation. A complete description of the model and underlying assumptions is given. Mapping of charge pulses is accomplished by solving an adjoint carrier continuity equation. The solution of the adjoint equation yields Green`s function, a time- and position-dependent map that contains all possible charge pulses that can be produced by the detector for charge generated at discrete locations (e.g., by gamma-ray interactions). Because the map is generated by solving a single, time-dependent problem, the potential for reduction in computational effort over direct mapping methods is significant, particularly for detectors with complex electrode structures. In this paper, the adjoint equation is derived and the mapping method is illustrated for a simple case.

Prettyman, T.H.

1998-12-01T23:59:59.000Z

269

Hybrid high-temperature superconductor-semiconductor tunnel diode  

E-Print Network (OSTI)

We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices were fabricated by our newly-developed mechanical bonding technique, resulting in high-Tc-semiconductor planar junctions acting as superconducting tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+{\\delta} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity - in good agreement with theoretical predictions for a d-wave superconductor-normal material junction, and similar to spectra obtained in scanning tunneling microscopy. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+{\\delta} combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials and quantum technology applications.

Alex Hayat; Parisa Zareapour; Shu Yang F. Zhao; Achint Jain; Igor G. Savelyev; Marina Blumin; Zhijun Xu; Alina Yang; G. D. Gu; Harry E. Ruda; Shuang Jia; R. J. Cava; Aephraim M. Steinberg; Kenneth S. Burch

2013-01-09T23:59:59.000Z

270

Semiconductor light source with electrically tunable emission wavelength  

DOE Patents (OSTI)

A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.

Belenky, Gregory (Port Jefferson, NY); Bruno, John D. (Bowie, MD); Kisin, Mikhail V. (Centereach, NY); Luryi, Serge (Setauket, NY); Shterengas, Leon (Centereach, NY); Suchalkin, Sergey (Centereach, NY); Tober, Richard L. (Elkridge, MD)

2011-01-25T23:59:59.000Z

271

A comparative study of semiconductor-based plasmonic metamaterials  

E-Print Network (OSTI)

Recent metamaterial (MM) research faces several problems when using metal-based plasmonic components as building blocks for MMs. The use of conventional metals for MMs is limited by several factors: metals such as gold and silver have high losses in the visible and near-infrared (NIR) ranges and very large negative real permittivity values, and in addition, their optical properties cannot be tuned. These issues that put severe constraints on the device applications of MMs could be overcome if semiconductors are used as plasmonic materials instead of metals. Heavily doped, wide bandgap oxide semiconductors could exhibit both a small negative real permittivity and relatively small losses in the NIR. Heavily doped oxides of zinc and indium were already reported to be good, low loss alternatives to metals in the NIR range. Here, we consider these transparent conducting oxides (TCOs) as alternative plasmonic materials for many specific applications ranging from surface-plasmon-polariton waveguides to MMs with hype...

Naik, Gururaj V; 10.1016/j.metmat.2010.11.001

2011-01-01T23:59:59.000Z

272

Semiconductor laser devices having lateral refractive index tailoring  

DOE Patents (OSTI)

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

Ashby, C.I.H.; Hadley, G.R.; Hohimer, J.P.; Owyoung, A.

1989-06-15T23:59:59.000Z

273

Energy Conservation Through Water Usage Reduction in the Semiconductor Industry  

E-Print Network (OSTI)

The semiconductor industry uses large amounts of Ultrapure Water (UPW) in the wafer fabrication process. Producing UPW involves energy-intensive operations, such as membrane separations, ultraviolet lamps, and continuous pumping and recirculation systems. Indirect energy costs can also be allocated to steps in the UPW process. Motorola recognizes that by reducing UPW consumption, energy savings will result. Energy conservation can also be achieved by improving the UPW generation process itself and by recycling or reclaiming UPW and other water streams.

Mendicino, L.; McCormack, K.; Gibson, S.; Patton, B.; Lyon, D.; Covington, J.

1998-04-01T23:59:59.000Z

274

Semiconductor-based, large-area, flexible, electronic devices  

SciTech Connect

Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Goyal, Amit (Knoxville, TN)

2011-03-15T23:59:59.000Z

275

Method for measuring the drift mobility in doped semiconductors  

DOE Patents (OSTI)

A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.

Crandall, Richard S. (Princeton, NJ)

1982-01-01T23:59:59.000Z

276

Method for measuring the drift mobility in doped semiconductors  

DOE Patents (OSTI)

A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.

Crandall, R.S.

1982-03-09T23:59:59.000Z

277

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

Electronic Structure and Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Wednesday, 29 November 2006 00:00 The possibility of using electrons' spins in addition to their charge in information technology has created much enthusiasm for a new field of electronics popularly known as "spintronics." An intensely studied approach to obtaining spin-polarized carriers for data-storage devices is the use of diluted magnetic semiconductors created by doping ions like Mn, Fe, or Co having a net spin into a semiconducting host such as GaAs, ZnO, or GaN. The interaction among these spins leads to ferromagnetic order at low temperatures, which is necessary to create spin-polarized carriers. A research team working at ALS Beamline 4.0.2 and European Synchrotron Radiation Facility Beamline ID8 made a big leap forward in clarifying the microscopic picture of magnetism and anisotropy in Mn-doped GaAs by resolving localized and hybridized d states using angle-dependent x-ray magnetic circular dichroism (XMCD) measurements.

278

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print The possibility of using electrons' spins in addition to their charge in information technology has created much enthusiasm for a new field of electronics popularly known as "spintronics." An intensely studied approach to obtaining spin-polarized carriers for data-storage devices is the use of diluted magnetic semiconductors created by doping ions like Mn, Fe, or Co having a net spin into a semiconducting host such as GaAs, ZnO, or GaN. The interaction among these spins leads to ferromagnetic order at low temperatures, which is necessary to create spin-polarized carriers. A research team working at ALS Beamline 4.0.2 and European Synchrotron Radiation Facility Beamline ID8 made a big leap forward in clarifying the microscopic picture of magnetism and anisotropy in Mn-doped GaAs by resolving localized and hybridized d states using angle-dependent x-ray magnetic circular dichroism (XMCD) measurements.

279

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors  

NLE Websites -- All DOE Office Websites (Extended Search)

Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print Electronic Structure and Magnetism in Diluted Magnetic Semiconductors Print The possibility of using electrons' spins in addition to their charge in information technology has created much enthusiasm for a new field of electronics popularly known as "spintronics." An intensely studied approach to obtaining spin-polarized carriers for data-storage devices is the use of diluted magnetic semiconductors created by doping ions like Mn, Fe, or Co having a net spin into a semiconducting host such as GaAs, ZnO, or GaN. The interaction among these spins leads to ferromagnetic order at low temperatures, which is necessary to create spin-polarized carriers. A research team working at ALS Beamline 4.0.2 and European Synchrotron Radiation Facility Beamline ID8 made a big leap forward in clarifying the microscopic picture of magnetism and anisotropy in Mn-doped GaAs by resolving localized and hybridized d states using angle-dependent x-ray magnetic circular dichroism (XMCD) measurements.

280

Nonlinear fibre-optic devices pumped by semiconductor disk lasers  

Science Conference Proceedings (OSTI)

Semiconductor disk lasers offer a unique combination of characteristics that are particularly attractive for pumping Raman lasers and amplifiers. The advantages of disk lasers include a low relative noise intensity (-150 dB Hz{sup -1}), scalable (on the order of several watts) output power, and nearly diffraction-limited beam quality resulting in a high ({approx}70 % - 90 %) coupling efficiency into a single-mode fibre. Using this technology, low-noise fibre Raman amplifiers operating at 1.3 {mu}m in co-propagation configuration are developed. A hybrid Raman-bismuth doped fibre amplifier is proposed to further increase the pump conversion efficiency. The possibility of fabricating mode-locked picosecond fibre lasers operating under both normal and anomalous dispersion is shown experimentally. We demonstrate the operation of 1.38-{mu}m and 1.6-{mu}m passively mode-locked Raman fibre lasers pumped by 1.29-{mu}m and 1.48-{mu}m semiconductor disk lasers and producing 1.97- and 2.7-ps pulses, respectively. Using a picosecond semiconductor disk laser amplified with an ytterbium-erbium fibre amplifier, the supercontinuum generation spanning from 1.35 {mu}m to 2 {mu}m is achieved with an average power of 3.5 W. (invited paper)

Chamorovskiy, A Yu; Okhotnikov, Oleg G [Optoelectronics Research Center, Tampere University of Technology, Tampere (Finland)

2012-11-30T23:59:59.000Z

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Implications of mercury interactions with band-gap semiconductor oxides  

SciTech Connect

Titanium dioxide is a well-known photooxidation catalyst. It will oxidize mercury in the presence of ultraviolet light from the sun and oxygen and/or moisture to form mercuric oxide. Several companies manufacture self-cleaning windows. These windows have a transparent coating of titanium dioxide. The titanium dioxide is capable of destroying organic contaminants in air in the presence of ultraviolet light from the sun, thereby keeping the windows clean. The commercially available self-cleaning windows were used to sequester mercury from oxygennitrogen mixtures. Samples of the self-cleaning glass were placed into specially designed photo-reactors in order to study the removal of elemental mercury from oxygennitrogen mixtures resembling air. The possibility of removing mercury from ambient air with a self-cleaning glass apparatus is examined. The intensity of 365-nm ultraviolet light was similar to the natural intensity from sunlight in the Pittsburgh region. Passive removal of mercury from the air may represent an option in lieu of, or in addition to, point source clean-up at combustion facilities. There are several common band-gap semiconductor oxide photocatalysts. Sunlight (both the ultraviolet and visible light components) and band-gap semiconductor particles may have a small impact on the global cycle of mercury in the environment. The potential environmental consequences of mercury interactions with band-gap semiconductor oxides are discussed. Heterogeneous photooxidation might impact the global transport of elemental mercury emanating from flue gases.

Granite, E.J.; King, W.P.; Stanko, D.C.; Pennline, H.W.

2008-09-01T23:59:59.000Z

282

Magnetism of Semiconductor-Based Magnetic Tunnel Junctions under Electric Field from First Principles  

SciTech Connect

Semiconductor magnetic tunnel junctions (MTJs), composed of diluted magnetic semiconductors (DMSs) sandwiching a semiconductor barrier, have potential applications in spintronics but their development has been slow due to the difficulty of controlling the magnetism of DMSs. In terms of density functional calculations for model semiconductor MTJs, (Zn,Co)O/ZnO/(Zn,Co)O and (Ga,Mn)N/GaN/(Ga,Mn)N, we show that the magnetic coupling between the transition metal ions in each DMS electrode of such semiconductor MTJs can be switched from ferromagnetic to antiferromagnetic, or vice versa, under the application of external electric field across the junctions. Our results suggest a possible avenue for the application of semiconductor MTJs.

Kan, E.; Xiang, H.; Yang, J.; Whangbo, M. H.

2009-06-01T23:59:59.000Z

283

Molecular Chemistry to the Fore: New Insights into the Fascinating World of Photoactive Colloidal Semiconductor Nanocrystals  

SciTech Connect

Colloidal semiconductor nanocrystals possess unique properties that are unmatched by other chromophores such as organic dyes or transition-metal complexes. These versatile building blocks have generated much scientific interest and found applications in bioimaging, tracking, lighting, lasing, photovoltaics, photocatalysis, thermoelectrics, and spintronics. Despite these advances, important challenges remain, notably how to produce semiconductor nanostructures with predetermined architecture, how to produce metastable semiconductor nanostructures that are hard to isolate by conventional syntheses, and how to control the degree of surface loading or valence per nanocrystal. Molecular chemists are very familiar with these issues and can use their expertise to help solve these challenges. In this Perspective, we present our groups recent work on bottom-up molecular control of nanoscale composition and morphology, low-temperature photochemical routes to semiconductor heterostructures and metastable phases, solar-to-chemical energy conversion with semiconductor-based photocatalysts, and controlled surface modification of colloidal semiconductors that bypasses ligand exchange.

Vela-Becerra, Javier [Ames Laboratory

2013-02-01T23:59:59.000Z

284

Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate  

DOE Patents (OSTI)

A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN); Chisholm, Matthew F. (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

285

Coherent multi-exciton dynamics in semiconductor nanostructures via two-dimensional Fourier transform optical spectroscopy  

E-Print Network (OSTI)

The Coulomb correlations between photoexcited charged particles in materials such as photosynthetic complexes, conjugated polymer systems, J-aggregates, and bulk or nanostructured semiconductors produce a hierarchy of ...

Stone, Katherine Walowicz

2009-01-01T23:59:59.000Z

286

Comment on "Analysis of quantum coherent semiconductor quantum dot p-i-n junction photovoltaic cells"  

E-Print Network (OSTI)

This is a comment on PRL paper by A.P. Kirk "Analysis of quantum coherent semiconductor quantum dot p-i-n junction photovoltaic cells"

Scully, Marlan O

2010-01-01T23:59:59.000Z

287

Group I-III-VI.sub.2 semiconductor films for solar cell application  

SciTech Connect

This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.

Basol, Bulent M. (Redondo Beach, CA); Kapur, Vijay K. (Northridge, CA)

1991-01-01T23:59:59.000Z

288

Development of fluorescent semi-conductor nanocrystal conjugates for in vitro and in vivo imaging applications  

E-Print Network (OSTI)

Semiconductor nanocrystals, also known as quantum dots (QDs), are promising imaging probes with characteristic optical properties: tunable bandgap from visible to infrared, narrow and symmetric emission features, broad ...

Han, Hee-Sun, Ph. D. Massachusetts Institute of Technology

2012-01-01T23:59:59.000Z

289

Global product development in semiconductor industry : Intel -- Tick-Tock product development cadence  

E-Print Network (OSTI)

This thesis investigates on changes in semiconductor industry's product development methodology by following Intel's product development from year 2000. Intel was challenged by customer's preference change, competitors new ...

Park, Cheolmin, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

290

Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications  

DOE Patents (OSTI)

The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

Hui, Rongqing (Lenexa, KS); Jiang,Hong-Xing (Manhattan, KS); Lin, Jing-Yu (Manhattan, KS)

2008-03-18T23:59:59.000Z

291

2012 DEFECTS IN SEMICONDUCTORS GORDON RESEARCH CONFERENCE, AUGUST 12-17, 2012  

Science Conference Proceedings (OSTI)

The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

GLASER, EVAN

2012-08-17T23:59:59.000Z

292

Frequency modulation on single sideband using controlled dynamics of an optically injected semiconductor laser  

E-Print Network (OSTI)

locked semicon- ductor lasers with delayed optoelectronicgeneration using semiconductor laser dynamics, IEEE J. Sel.in optically-injected laser diodes, Opt. Commun. , vol.

Chan, Sze-Chun; Liu, Jia-Ming

2006-01-01T23:59:59.000Z

293

Optical Nonlinearities and Ultrafast Carrier Dynamics in Semiconductor Quantum Dots  

SciTech Connect

Low-dimensional semiconductors have attracted great interest due to the potential for tailoring their linear and nonlinear optical properties over a wide-range. Semiconductor nanocrystals (NC's) represent a class of quasi-zero-dimensional objects or quantum dots. Due to quantum cordhement and a large surface-to-volume ratio, the linear and nonlinear optical properties, and the carrier dynamics in NC's are significantly different horn those in bulk materials. napping at surface states can lead to a fast depopulation of quantized states, accompanied by charge separation and generation of local fields which significantly modifies the nonlinear optical response in NC's. 3D carrier confinement also has a drastic effect on the energy relaxation dynamics. In strongly confined NC's, the energy-level spacing can greatly exceed typical phonon energies. This has been expected to significantly inhibit phonon-related mechanisms for energy losses, an effect referred to as a phonon bottleneck. It has been suggested recently that the phonon bottleneck in 3D-confined systems can be removed due to enhanced role of Auger-type interactions. In this paper we report femtosecond (fs) studies of ultrafast optical nonlinearities, and energy relaxation and trap ping dynamics in three types of quantum-dot systems: semiconductor NC/glass composites made by high temperature precipitation, ion-implanted NC's, and colloidal NC'S. Comparison of ultrafast data for different samples allows us to separate effects being intrinsic to quantum dots from those related to lattice imperfections and interface properties.

Klimov, V.; McBranch, D.; Schwarz, C.

1998-08-10T23:59:59.000Z

294

Light emission patterns from stadium-shaped semiconductor microcavity lasers  

E-Print Network (OSTI)

We study light emission patterns from stadium-shaped semiconductor (GaAs) microcavity lasers theoretically and experimentally. Performing systematic wave calculations for passive cavity modes, we demonstrate that the averaging by low-loss modes, such as those realized in multi-mode lasing, generates an emission pattern in good agreement with the ray model's prediction. In addition, we show that the dependence of experimental far-field emission patterns on the aspect ratio of the stadium cavity is well reproduced by the ray model.

Susumu Shinohara; Takehiro Fukushima; Takahisa Harayama

2007-06-01T23:59:59.000Z

295

Activation of molecular catalysts using semiconductor quantum dots  

DOE Patents (OSTI)

Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

Meyer, Thomas J. (Chapel Hill, NC); Sykora, Milan (Los Alamos, NM); Klimov, Victor I. (Los Alamos, NM)

2011-10-04T23:59:59.000Z

296

Three-terminal semiconductor laser for wave mixing  

E-Print Network (OSTI)

We suggest and analyze the concept of a semiconductor laser device that incorporates two basic ideas: (i) dual-wavelength generation of two optical fields on the interband transitions with independent control of each field in a three-terminal "transistor" scheme, and (ii) generation of infrared radiation in the 3-300 mum range due to nonlinear wave mixing of the above optical fields in the same laser cavity. Due to inversionless nature of the difference frequency generation and inherently low threshold current, the laser can be capable of continuous room-temperature operation in the mid/far-infrared and THz range.

Belyanin, Alexey; Kocharovsky, V.; Kocharovsky, V.; Scully, Marlan O.

2002-01-01T23:59:59.000Z

297

Bistability of Cation Interstitials in II-VI Semiconductors  

DOE Green Energy (OSTI)

The stability of cation interstitials in II-VI semiconductors is studied using ab initio methods. We find that interstitials in the neutral charge state are more stable in the tetrahedral interstitial site near the cation, whereas in the (2+) charge state, they are more stable near the anion. The diffusion energy barrier changes when the defect charge state changes. Therefore, if electrons/holes are taken from the defect level by light, changing its charge state, the interstitial atom will be able to diffuse almost spontaneously due to a reduced diffusion barrier.

Wei, S. H.; Dalpian, G. M.

2005-11-01T23:59:59.000Z

298

Opto-acoustic transducer for medical applications  

DOE Patents (OSTI)

This invention is an optically activated transducer for generating acoustic vibrations in a biological medium. The transducer is located at the end of a fiber optic which may be located within a catheter. Energy for operating the transducer is provided optically by laser light transmitted through the fiber optic to the transducer. Pulsed laser light is absorbed in the working fluid of the transducer to generate a thermal pressure and consequent adiabatic expansion of the transducer head such that it does work against the ambient medium. The transducer returns to its original state by a process of thermal cooling. The motion of the transducer within the ambient medium couples acoustic energy into the medium. By pulsing the laser at a high repetition rate (which may vary from CW to 100 kHz) an ultrasonic radiation field can be established locally in the medium. This method of producing ultrasonic vibrations can be used in vivo for the treatment of stroke-related conditions in humans, particularly for dissolving thrombus. The catheter may also incorporate anti-thrombolytic drug treatments as an adjunct therapy and it may be operated in conjunction with ultrasonic detection equipment for imaging and feedback control.

Benett, William (Livermore, CA); Celliers, Peter (Berkeley, CA); Da Silva, Luiz (Danville, CA); Glinsky, Michael (Livermore, CA); London, Richard (Orinda, CA); Maitland, Duncan (Livermore, CA); Matthews, Dennis (Moss Beach, CA); Krulevich, Peter (Pleasanton, CA); Lee, Abraham (Walnut Creek, CA)

1999-01-01T23:59:59.000Z

299

Opto-acoustic transducer for medical applications  

DOE Patents (OSTI)

This invention is an optically activated transducer for generating acoustic vibrations in a biological medium. The transducer is located at the end of a fiber optic which may be located within a catheter. Energy for operating the transducer is provided optically by laser light transmitted through the fiber optic to the transducer. Pulsed laser light is absorbed in the working fluid of the transducer to generate a thermal pressure and consequent adiabatic expansion of the transducer head such that it does work against the ambient medium. The transducer returns to its original state by a process of thermal cooling. The motion of the transducer within the ambient medium couples acoustic energy into the medium. By pulsing the laser at a high repetition rate (which may vary from CW to 100 kHz) an ultrasonic radiation field can be established locally in the medium. This method of producing ultrasonic vibrations can be used in vivo for the treatment of stroke-related conditions in humans, particularly for dissolving thrombus. The catheter may also incorporate anti-thrombolytic drug treatments as an adjunct therapy and it may be operated in conjunction with ultrasonic detection equipment for imaging and feedback control.

Benett, William (Livermore, CA); Celliers, Peter (Berkeley, CA); Da Silva, Luiz (Danville, CA); Glinsky, Michael (Livermore, CA); London, Richard (Orinda, CA); Maitland, Duncan (Livermore, CA); Matthews, Dennis (Moss Beach, CA); Krulevich, Peter (Pleasanton, CA); Lee, Abraham (Walnut Creek, CA)

2002-01-01T23:59:59.000Z

300

Opto-acoustic recanilization delivery system  

DOE Patents (OSTI)

Fiber delivered laser pulses emulsify thrombus by mechanical stresses that include a combination of pressure, tension and shear stress. Laser radiation is delivered to the locality of a thrombus and the radiation is absorbed by blood, blood dot, or other present materials. The combination of a leading pressure wave and subsequent vapor bubble cause efficient, emulsification of thrombus. Operating the laser in a low average power mode alleviates potential thermal complications. The laser is operated in a high repetition rate mode to take advantage of ultrasound frequency effects of thrombus dissolution as well as to decrease the total procedure time. Specific parameter ranges for operation are described. The device includes optical fibers surrounding a lumen intended for flow of a cooling agent. The fibers may be arranged concentrically around the lumen to deliver radiation and heat over as large an area as possible. An alternative design approach incorporates the optical fibers into the wall of the guiding catheter and utilizes the catheter lumen as the cooling channel. An eccentric tip enables rotation of the device to address all parts of the vasculature. The eccentricity can be provided via a variety of means: spring dip, balloon, protrusion, etc.

Visuri, Steven R. (Livermore, CA); Da Silva, Luiz B. (Danville, CA); Celliers, Peter M. (Berkeley, CA); London, Richard A. (Orinda, CA); Benett, William (Livermore, CA); Broughton, Kathryn (Berkeley, CA); Esch, Victor (San Francisco, CA)

2002-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Opto-acoustic transducer for medical applications  

Science Conference Proceedings (OSTI)

This invention is an optically activated transducer for generating acoustic vibrations in a biological medium. The transducer is located at the end of a fiber optic which may be located within a catheter. Energy for operating the transducer is provided optically by laser light transmitted through the fiber optic to the transducer. Pulsed laser light is absorbed in the working fluid of the transducer to generate a thermal pressure and consequent adiabatic expansion of the transducer head such that it does work against the ambient medium. The transducer returns to its original state by a process of thermal cooling. The motion of the transducer within the ambient medium couples acoustic energy into the medium. By pulsing the laser at a high repetition rate (which may vary from CW to 100 kHz) an ultrasonic radiation field can be established locally in the medium. This method of producing ultrasonic vibrations can be used in vivo for the treatment of stroke-related conditions in humans, particularly for dissolving thrombus. The catheter may also incorporate anti-thrombolytic drug treatments as an adjunct therapy and it may be operated in conjunction with ultrasonic detection equipment for imaging and feedback control. 7 figs.

Benett, W.; Celliers, P.; Da Silva, L.; Glinsky, M.; London, R.; Maitland, D.; Matthews, D.; Krulevich, P.; Lee, A.

1999-08-31T23:59:59.000Z

302

Synthesis and catalytic properties of metal and semiconductor nanoclusters  

SciTech Connect

Synthesis of metal or semiconductor nanoclusters in microheterogeneous oil-continuous inverse micelle systems is discussed. We focus on synthesis and catalytic properties of palladium, iron, and iron sulfide nanoclusters. Cluster size-control is achieved by changing the micelle size which is determined by small angle neutron scattering (SANS) and chosen to produce cluster in size range of 1-20 nm. Cluster sizes were determined by either transmission electron microscopy (TEM) or small-angle x-ray scattering (SAXS). Cluster structure was determined by either x-ray or electron diffraction. In the case of Fe nanoclusters the crystal structure depended on the chemical nature of the surfactant micelle used in the synthesis, illustrating the important role of the surfactant during the growth process. Results of in-situ pyrene hydrogenation using size-selected Pd clusters show a significant increase in activity/total surface area as the size decreases. These clusters also proved effective as unsupported catalysts for direct coal hydropyrolysis, even at very low metal concentrations. Synthesis and optical features of a new semiconductor cluster material, FeS{sub 2}, is discussed with regard to its use in photocatalysis. Application of FeS{sub 2} in coal hydrogenolysis reactions has improved yields of short chain hydrocarbons significantly compared to conventional FeS{sub 2} powders.

Wilcoxon, J.P.; Martino, T.; Klavetter, E.; Sylwester, A.P.

1993-08-01T23:59:59.000Z

303

Method and apparatus for thermal processing of semiconductor substrates  

DOE Patents (OSTI)

An improved apparatus and method for thermal processing of semiconductor wafers. The apparatus and method provide the temperature stability and uniformity of a conventional batch furnace as well as the processing speed and reduced time-at-temperature of a lamp-heated rapid thermal processor (RTP). Individual wafers are rapidly inserted into and withdrawn from a furnace cavity held at a nearly constant and isothermal temperature. The speeds of insertion and withdrawal are sufficiently large to limit thermal stresses and thereby reduce or prevent plastic deformation of the wafer as it enters and leaves the furnace. By processing the semiconductor wafer in a substantially isothermal cavity, the wafer temperature and spatial uniformity of the wafer temperature can be ensured by measuring and controlling only temperatures of the cavity walls. Further, peak power requirements are very small compared to lamp-heated RTPs because the cavity temperature is not cycled and the thermal mass of the cavity is relatively large. Increased speeds of insertion and/or removal may also be used with non-isothermal furnaces.

Griffiths, Stewart K. (Danville, CA); Nilson, Robert H. (Cardiss, CA); Mattson, Brad S. (Los Gatos, CA); Savas, Stephen E. (Alameda, CA)

2000-01-01T23:59:59.000Z

304

High-efficiency photovoltaics based on semiconductor nanostructures  

SciTech Connect

The objective of this project was to exploit a variety of semiconductor nanostructures, specifically semiconductor quantum wells, quantum dots, and nanowires, to achieve high power conversion efficiency in photovoltaic devices. In a thin-film device geometry, the objectives were to design, fabricate, and characterize quantum-well and quantum-dot solar cells in which scattering from metallic and/or dielectric nanostructures was employed to direct incident photons into lateral, optically confined paths within a thin (~1-3um or less) device structure. Fundamental issues concerning nonequilibrium carrier escape from quantum-confined structures, removal of thin-film devices from an epitaxial growth substrate, and coherent light trapping in thin-film photovoltaic devices were investigated. In a nanowire device geometry, the initial objectives were to engineer vertical nanowire arrays to optimize optical confinement within the nanowires, and to extend this approach to core-shell heterostructures to achieve broadspectrum absorption while maintaining high opencircuit voltages. Subsequent work extended this approach to include fabrication of nanowire photovoltaic structures on low-cost substrates.

Yu, Paul K.L. [University of California, San Diego; Yu, Edward T. [University of Texas at Austin; Wang, Deli [University of California, San Diego

2011-10-31T23:59:59.000Z

305

Helicon wave excitation to produce energetic electrons for manufacturing semiconductors  

DOE Patents (OSTI)

A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate. This procedure is especially advantageous in the multilayer semiconductor manufacturing because trenches can be formed that are in the range of 0.18--0.35 mm or less. 16 figs.

Molvik, A.W.; Ellingboe, A.R.

1998-10-20T23:59:59.000Z

306

Femtosecond laser interactions with semiconductor and dielectric materials  

SciTech Connect

Electronic excitation-relaxation processes induced by ultra-short laser pulses are studied numerically for semiconductors and dielectric materials (Si, quartz). A detailed kinetic approach is used in the calculations accounting for electron-photon-phonon, electron-phonon and electron-electron scatterings. In addition, both laser field ionization ranging from multi-photon to tunneling one, and electron impact (avalanche) ionization processes are included in the model. Based on the performed calculations we study the relaxation time as a function of laser parameters. It is shown that this time depends on the density of the created free carriers, which in turn is a nonlinear function of laser intensity. In addition, a simple damage criterion is proposed based on the mean electron energy density rather than on critical free electron density. This criterion gives a reasonable agreement with the available experimental data practically without adjustable parameters. Furthermore, the performed modeling provides energy absorbed in the target, conditions for damage of dielectric materials, as well as conditions for surface plasmon excitation and for periodic surface structure formation on the surface of semiconductor materials.

Shcheblanov, Nikita S.; Derrien, Thibault J. Y.; Itina, Tatiana E. [Laboratoire Hubert Curien, CNRS//Universite Jeann Monnet, 18 rue du Prof. Benoit Lauras, 42000 Saint-Etienne (France); Laboratoire Lasers, Plasmas et Procedes Photoniques, CNRS//Universite de la Mediterranee, 162 avenue de Luminy, 13288, Marseille (France); Laboratoire Hubert Curien, CNRS//Universite Jeann Monnet, 18 rue du Prof. Benoit Lauras, 42000 Saint-Etienne (France)

2012-07-30T23:59:59.000Z

307

Low-temperature magnetization of (Ga,Mn) As semiconductors  

E-Print Network (OSTI)

We report on a comprehensive study of the ferromagnetic moment per Mn atom in (Ga,Mn)As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments antiferromagnetically coupled to valence band hole spins. The validity of the effective model over the range of doping studied is assessed by comparing with microscopic tight-binding/coherent-potential approximation calculations. Using the virtual crystal k center dot p model for hole states, we evaluate the zero-temperature mean-field contributions to the magnetization from the hole kinetic and exchange energies, and magnetization suppression due to quantum fluctuations of Mn moment orientations around their mean-field ground state values. Experimental low-temperature ferromagnetic moments per Mn are obtained by superconducting quantum interference device and x-ray magnetic circular dichroism measurements in a series of (Ga,Mn)As semiconductors with nominal Mn doping ranging from similar to 2 to 8%. Hall measurements in as-grown and annealed samples are used to estimate the number of uncompensated substitutional Mn moments. Based on our comparison between experiment and theory we conclude that all these Mn moments in high quality (Ga,Mn)As materials have nearly parallel ground state alignment.

Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

2006-01-01T23:59:59.000Z

308

Glass, Plastic and Semiconductors: Packaging Techniques for Miniature Optoelectric Components  

Science Conference Proceedings (OSTI)

At Lawrence Livermore National Laboratory, they have extensive experience with the design and development of miniature photonic systems which require novel packaging schemes. Over the years they have developed silicon micro-optical benches to serve as a stable platform for precision mounting of optical and electronic components. They have developed glass ball lenses that can be fabricated in-situ on the microbench substrate. They have modified commercially available molded plastic fiber ribbon connectors (MT) and added thin film multilayer semiconductor coatings to create potentially low-cost wavelength combiners and wavelength selective filters. They have fabricated both vertical-cavity and in-plane semiconductor lasers and amplifiers, and have packaged these and other components into several miniature photonics systems. For example, they have combined the silicon optical bench with standard electronic packaging techniques and the custom-made wavelength-selective filters to develop a four-wavelength wavelength-division-multiplexing transmitter module mounted in a standard 120-pin ceramic PGA package that couples light from several vertical-cavity-surface-emitting-laser arrays into one multimode fiber-ribbon array. The coupling loss can be as low as 2dB, and the transmitters can be operated at over 1.25 GHz. While these systems were not designed for biomedical or environmental applications, the concepts and techniques are general and widely applicable.

Pocha, M.D.; Garrett, H.E.; Patel, R.R.; Jones II, L.M.; Larson, M.C.; Emanuel, M.A.; Bond, S.W.; Deri, R.J.; Drayton, R.F.; Peterson, H.E.; Lowry, M.E.

1999-12-20T23:59:59.000Z

309

Characterization of Hydrogen Complex Formation in III-V Semiconductors  

DOE Green Energy (OSTI)

Atomic hydrogen has been found to react with some impurity species in semiconductors. Hydrogenation is a methodology for the introduction of atomic hydrogen into the semiconductor for the express purpose of forming complexes within the material. Efforts to develop hydrogenation as an isolation technique for AlGaAs and Si based devices failed to demonstrate its commercial viability. This was due in large measure to the low activation energies of the formed complexes. Recent studies of dopant passivation in long wavelength (0.98 - 1.55?m) materials suggested that for the appropriate choice of dopants much higher activation energies can be obtained. This effort studied the formation of these complexes in InP, This material is extensively used in optoelectronics, i.e., lasers, modulators and detectors. The experimental techniques were general to the extent that the results can be applied to other areas such as sensor technology, photovoltaics and to other material systems. The activation energies for the complexes have been determined and are reported in the scientific literature. The hydrogenation process has been shown by us to have a profound effect on the electronic structure of the materials and was thoroughly investigated. The information obtained will be useful in assessing the long term reliability of device structures fabricated using this phenomenon and in determining new device functionalities.

Williams, Michael D.

2006-09-28T23:59:59.000Z

310

Spin-polarized current oscillations in diluted magnetic semiconductor multiple quantum wells Manuel Bejar,1  

E-Print Network (OSTI)

Spin-polarized current oscillations in diluted magnetic semiconductor multiple quantum wells Manuel and charge dynamics of electrons in n-doped II-VI semiconductor multiple quantum wells when one or more quantum wells are doped with Mn. The interplay between strongly nonlinear interwell charge transport

Sánchez, David

311

Performance of a parallel algebraic multilevel preconditioner for stabilized finite element semiconductor device modeling  

Science Conference Proceedings (OSTI)

In this study results are presented for the large-scale parallel performance of an algebraic multilevel preconditioner for solution of the drift-diffusion model for semiconductor devices. The preconditioner is the key numerical procedure determining ... Keywords: Drift-diffusion, Finite element, Graph partitioning, Multigrid, Multilevel preconditioners, Newton-Krylov, Nonsmoothed aggregation, Schwarz domain decomposition, Semiconductor devices

Paul T. Lin; John N. Shadid; Marzio Sala; Raymond S. Tuminaro; Gary L. Hennigan; Robert J. Hoekstra

2009-09-01T23:59:59.000Z

312

Using the FDM and ANP to construct a sustainability balanced scorecard for the semiconductor industry  

Science Conference Proceedings (OSTI)

This paper proposed a sustainability balanced scorecard (SBSC) framework to measure the sustainable performance of the semiconductor industry. Based on the principle of four perspectives of balanced scorecard (BSC), of which two were changed from the ... Keywords: Analytic network process, Fuzzy Delphi method, Semiconductor industry, Sustainability balanced scorecard

Chia-Wei Hsu; Allen H. Hu; Cherng-Ying Chiou; Ta-Che Chen

2011-09-01T23:59:59.000Z

313

Ultrafast shift and injection currents observed in wurtzite semiconductors via emitted terahertz radiation  

E-Print Network (OSTI)

and injection currents have been generated in bulk GaAs and strained GaAs quantum wells QWs , respectivelyUltrafast shift and injection currents observed in wurtzite semiconductors via emitted terahertz; published online 18 November 2005 Shift and injection currents are generated in the wurtzite semiconductors

Van Driel, Henry M.

314

Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices  

Science Conference Proceedings (OSTI)

Density-gradient theory provides a macroscopic approach to modeling quantum transport that is particularly well adapted to semiconductor device analysis and engineering. After some introductory observations, the basis of the theory in macroscopic and ... Keywords: Continuum, Density-gradient, Electron transport, Quantum confinement, Quantum tunneling, Semiconductor device simulation, Thermodynamics

M. G. Ancona

2011-06-01T23:59:59.000Z

315

Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes  

DOE Patents (OSTI)

A luminescent semiconductor nanocrystal compound is described which is capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation (luminescing) in a narrow wavelength band and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The luminescent semiconductor nanocrystal compound is linked to an affinity molecule to form an organo luminescent semiconductor nanocrystal probe capable of bonding with a detectable substance in a material being analyzed, and capable of emitting electromagnetic radiation in a narrow wavelength band and/or absorbing, scattering, or diffracting energy when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam. The probe is stable to repeated exposure to light in the presence of oxygen and/or other radicals. Further described is a process for making the luminescent semiconductor nanocrystal compound and for making the organo luminescent semiconductor nanocrystal probe comprising the luminescent semiconductor nanocrystal compound linked to an affinity molecule capable of bonding to a detectable substance. A process is also described for using the probe to determine the presence of a detectable substance in a material.

Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

1999-01-01T23:59:59.000Z

316

Spline regression based feature extraction for semiconductor process fault detection using support vector machine  

Science Conference Proceedings (OSTI)

Quality control is attracting more attention in semiconductor market due to harsh competition. This paper considers Fault Detection (FD), a well-known philosophy in quality control. Conventional methods, such as non-stationary SPC chart, PCA, PLS, and ... Keywords: Fault detection, Feature extraction, Semiconductor manufacturing, Spline regression, Support vector machine

Jonghyuck Park; Ick-Hyun Kwon; Sung-Shick Kim; Jun-Geol Baek

2011-05-01T23:59:59.000Z

317

Band anticrossing effects in highly mismatched semiconductor alloys  

DOE Green Energy (OSTI)

The first five chapters of this thesis focus on studies of band anticrossing (BAC) effects in highly electronegativity- mismatched semiconductor alloys. The concept of bandgap bowing has been used to describe the deviation of the alloy bandgap from a linear interpolation. Bowing parameters as large as 2.5 eV (for ZnSTe) and close to zero (for AlGaAs and ZnSSe) have been observed experimentally. Recent advances in thin film deposition techniques have allowed the growth of semiconductor alloys composed of significantly different constituents with ever- improving crystalline quality (e.g., GaAs{sub 1-x}N{sub x} and GaP{sub 1-x}N{sub x} with x {approx}< 0.05). These alloys exhibit many novel and interesting properties including, in particular, a giant bandgap bowing (bowing parameters > 14 eV). A band anticrossing model has been developed to explain these properties. The model shows that the predominant bowing mechanism in these systems is driven by the anticrossing interaction between the localized level associated with the minority component and the band states of the host. In this thesis I discuss my studies of the BAC effects in these highly mismatched semiconductors. It will be shown that the results of the physically intuitive BAC model can be derived from the Hamiltonian of the many-impurity Anderson model. The band restructuring caused by the BAC interaction is responsible for a series of experimental observations such as a large bandgap reduction, an enhancement of the electron effective mass, and a decrease in the pressure coefficient of the fundamental gap energy. Results of further experimental investigations of the optical properties of quantum wells based on these materials will be also presented. It will be shown that the BAC interaction occurs not only between localized states and conduction band states at the Brillouin zone center, but also exists over all of k-space. Finally, taking ZnSTe and ZnSeTe as examples, I show that BAC also occurs between localized states and the valence band states. Soft x-ray fluorescence experiments provide direct evidence of the BAC interaction in these systems. In the final chapter of the thesis, I describe and summarize my studies of optical properties of wurtzite InN and related alloys. Early studies performed on InN films grown by sputtering techniques suggested a direct bandgap of {approx}1.9 eV for this semiconductor. Very recently, high-quality InN films with much higher mobility have become available by using the molecular beam epitaxy growth method. Optical experiments carried out on these samples reveal a narrow bandgap for InN of 0.77 eV, much lower than the previously accepted value. Optical properties of InGaN and InAlN ternaries on the In rich side have also been characterized and are found to be consistent with the narrow bandgap of InN. The bandgap bowing parameters in these alloys were determined. In the context of these findings, the bandgap energies of InGaN and InAlN were found to cover a wide spectral range from the infrared for InN to the ultraviolet for GaN and deep ultraviolet for AlN. The significance of this work is rooted in many important applications of nitride semiconductors in optoelectronics and solar energy conversion devices.

Wu, Junqiao

2002-09-09T23:59:59.000Z

318

Argonne CNM News: State-of-the-Art Diamond Semiconductor Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

State-of-the-Art Diamond Semiconductor Technology Licensed to AKHAN Technologies State-of-the-Art Diamond Semiconductor Technology Licensed to AKHAN Technologies The U.S. Department of Energy's Argonne National Laboratory announced today that the laboratory has granted AKHAN Technologies, Inc., exclusive diamond semiconductor application licensing rights to breakthrough low-temperature diamond deposition technology developed by Argonne's Center for Nanoscale Materials (CNM). The method allows for the deposition of nanocrystalline diamond on a variety of wafer substrate materials at temperatures as low as 400°C, highly advantageous for integration with processed semiconductor electronic materials and resulting in the deposition of low-defect nanocrystalline diamond (NCD) thin films. The combination of CNM's low-temperature diamond technology with the AKHAN Miraj Diamond(tm) process represents the state of the art in diamond semiconductor thin-film technology.

319

Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt  

SciTech Connect

The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: 1. wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; 2. n-type semiconductors; 3.they exhibit well defined magnetic hysteresis loops and 4. their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A&M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of research by including investigations of Mn-FeTiO3, Mn-Fe2TiO5 and by producing a novel three terminal device capable of generating bipolar currents besides producing radiation resistant varistors and a magnetically switchable device. Furthermore we conclusively established the radiation hardness of the four modified iron titanates we studied. In all our publications, conference and seminar presentations, dissertations and theses sponsorship of DOE has been acknowledged

Dr. R. K. Pandey, Cudworth Endowed Professor (Professor Emeritus of The Unviersity of Alabama) Ingram Endowed Professor, Ingram School of Engineering and Physics Department, Texas State University, San Marocs, TX78666

2008-11-24T23:59:59.000Z

320

Transforming the Lighting Sector with Semiconductor Lighting Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

17-TED-000924-9/27 SR#2000-2333C 17-TED-000924-9/27 SR#2000-2333C Transforming the Lighting Sector With Semiconductor Lighting Technologies Thomas Drennen Sandia National Laboratories Roland Haitz Agilent Technologies Jeffrey Tsao E20 Communications Sandia National Laboratories USAEE/IAEE Annual Meetings Philadelphia, PA September 24-27, 2000 Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under Contract DE-AC04-94AL85000 2 6217-TED-000924-9/27 SR#2000-2333C Overview * Introduction * U.S. Lighting Demand * Evolution of LEDs * The LED Simulation Model (LEDSim) * Results 3 6217-TED-000924-9/27 SR#2000-2333C Introduction 0 50 100 150 200 1970 1980 1990 2000 2010 2020 Efficiency (lm/W) Year Incandescent Halogen Fluorescent Semi- conductor

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321

GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as the gate dielectric. The MOS gate reverse breakdown voltage was > 35V which was significantly improved from 17V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V{sub ds} = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, f{sub {tau}}, and maximum frequency of oscillation, f{sub max} of 3.1 and 10.3 GHz, respectively, were measured at V{sub ds} = 25 V and V{sub gs} = {minus}20 V.

Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Schurman, M.J.

1999-03-02T23:59:59.000Z

322

System for characterizing semiconductor materials and photovoltaic devices through calibration  

DOE Patents (OSTI)

A method and apparatus for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby.

Sopori, Bhushan L. (Denver, CO); Allen, Larry C. (Arvada, CO); Marshall, Craig (Littleton, CO); Murphy, Robert C. (Golden, CO); Marshall, Todd (Littleton, CO)

1998-01-01T23:59:59.000Z

323

Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices  

SciTech Connect

Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials that convert heat into electricity or actively remove heat for refrigeration and cooling purposes. Thermoelectric devices resemble computer chips, and they manage heat by manipulating the direction of electrons at the nanoscale. These devices arent new, but they are currently too inefficient and expensive for widespread use. Phononic Devices is using a high-performance, cost-effective thermoelectric design that will improve the devices efficiency and enable electronics manufacturers to more easily integrate them into their products.

None

2009-12-11T23:59:59.000Z

324

Band engineering in dilute nitride and bismide semiconductor lasers  

E-Print Network (OSTI)

Highly mismatched semiconductor alloys such as GaNAs and GaBiAs have several novel electronic properties, including a rapid reduction in energy gap with increasing x and also, for GaBiAs, a strong increase in spin orbit- splitting energy with increasing Bi composition. We review here the electronic structure of such alloys and their consequences for ideal lasers. We then describe the substantial progress made in the demonstration of actual GaInNAs telecomm lasers. These have characteristics comparable to conventional InP-based devices. This includes a strong Auger contribution to the threshold current. We show, however, that the large spin-orbit-splitting energy in GaBiAs and GaBiNAs could lead to the suppression of the dominant Auger recombination loss mechanism, finally opening the route to e?fficient temperature-stable telecomm and longer wavelength lasers with significantly reduced power consumption.

Christopher A. Broderick; Muhammad Usman; Stephen J. Sweeney; Eoin P. O'Reilly

2012-08-31T23:59:59.000Z

325

High gain photoconductive semiconductor switch having tailored doping profile zones  

SciTech Connect

A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

Baca, Albert G. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Mar, Alan (Albuquerque, NM); Zutavern, Fred J (Albuquerque, NM); Hjalmarson, Harold P. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Zipperian, Thomas E. (Edgewood, NM); O' Malley, Martin W. (Edgewood, NM); Helgeson, Wesley D. (Albuquerque, NM); Denison, Gary J. (Sandia Park, NM); Brown, Darwin J. (Albuquerque, NM); Sullivan, Charles T. (Albuquerque, NM); Hou, Hong Q. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

326

System for characterizing semiconductor materials and photovoltaic devices through calibration  

DOE Patents (OSTI)

A method and apparatus are disclosed for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby. 44 figs.

Sopori, B.L.; Allen, L.C.; Marshall, C.; Murphy, R.C.; Marshall, T.

1998-05-26T23:59:59.000Z

327

Predicted Ultrafast Single Qubit Operations in Semiconductor Quantum Dots  

E-Print Network (OSTI)

Several recently proposed implementations of scalable quantum computation rely on the ability to manipulate the spin polarization of individual electrons in semiconductors. The most rapid single-spin-manipulation technique to date relies on the generation of an effective magnetic field via a spin-sensitive optical Stark effect. This approach has been used to split spin states in colloidal CdSe quantum dots and to manipulate ensembles of spins in ZnMnSe quantum wells with femtosecond optical pulses. Here we report that the process will produce a coherent rotation of spin in quantum dots containing a single electron. The calculated magnitude of the effective magnetic field depends on the dot bandgap and the strain. We predict that in InAs/InP dots, for reasonable experimental parameters, the magnitude of the rotation is sufficient and the intrinsic error is low enough for them to serve as elements of a quantum dot based quantum computer.

C. E. Pryor; M. E. Flatt

2002-11-25T23:59:59.000Z

328

Active RF Pulse Compression Using An Electrically Controlled Semiconductor Switch  

SciTech Connect

First we review the theory of active pulse compression systems using resonant delay lines. Then we describe the design of an electrically controlled semiconductor active switch. The switch comprises an active window and an overmoded waveguide three-port network. The active window is based on a four-inch silicon wafer which has 960 PIN diodes. These are spatially combined in an overmoded waveguide. We describe the philosophy and design methodology for the three-port network and the active window. We then present the results of using this device to compress 11.4 GHz RF signals with high compression ratios. We show how the system can be used with amplifier like sources, in which one can change the phase of the source by manipulating the input to the source. We also show how the active switch can be used to compress a pulse from an oscillator like sources, which is not possible with passive pulse compression systems.

Guo, Jiquan; Tantawi, Sami; /SLAC

2007-01-10T23:59:59.000Z

329

Subtle Chemistry of Colloidal, Quantum-Confined Semiconductor Nanostructures  

SciTech Connect

Nanoscale colloidal semiconductor structures with at least one dimension small enough to experience quantum confinement effects have captured the imagination and attention of scientists interested in controlling various chemical and photophysical processes. Aside from having desirable quantum confinement properties, colloidal nanocrystals are attractive because they are often synthesized in low-temperature, low-cost, and potentially scalable manners using simple benchtop reaction baths. Considerable progress in producing a variety of shapes, compositions, and complex structures has been achieved. However, there are challenges to overcome in order for these novel materials to reach their full potential and become new drivers for commercial applications. The final shape, composition, nanocrystal-ligand structure, and size can depend on a delicate interplay of precursors, surface ligands, and other compounds that may or may not participate in the reaction. In this Perspective, we discuss current efforts toward better understanding how the reactivity of the reagents can be used to produce unique and complex nanostructures.

Hughes, B. K.; Luther, J. M.; Beard, M. C.

2012-06-26T23:59:59.000Z

330

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers  

Science Conference Proceedings (OSTI)

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a {approx} 200 {micro}s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and increased reliability. The high-level requirements on the semiconductor lasers involve reliability, price points on a price-per-Watt basis, and a set of technical requirements. The technical requirements for the amplifier design in reference 1 are discussed in detail and are summarized in Table 1. These values are still subject to changes as the overall laser system continues to be optimized. Since pump costs can be a significant fraction of the overall laser system cost, it is important to achieve sufficiently low price points for these components. At this time, the price target for tenth-of-akind IFE plant is $0.007/Watt for packaged devices. At this target level, the pumps account for approximately one third of the laser cost. The pump lasers should last for the life of the power plant, leading to a target component lifetime requirement of roughly 14 Ghosts, corresponding to a 30 year plant life and 15 Hz repetition rate. An attractive path forward involes pump operation at high output power levels, on a Watts-per-bar (Watts/chip) basis. This reduces the cost of pump power (price-per-Watt), since to first order the unit price does not increase with power/bar. The industry has seen a continual improvement in power output, with current 1 cm-wide bars emitting up to 500 W QCW (quasi-continuous wave). Increased power/bar also facilitates achieving high irradiance in the array plane. On the other hand, increased power implies greater heat loads and (possibly) higher current drive, which will require increased attention to thermal management and parasitic series resistance. Diode chips containing multiple p-n junctions and quantum wells (also called nanostack structures) may provide an additional approach to reduce the peak current.

Deri, R J

2011-01-03T23:59:59.000Z

331

Standard practice for radiologic examination of semiconductors and electronic components  

E-Print Network (OSTI)

1.1 This practice provides the minimum requirements for nondestructive radiologic examination of semiconductor devices, microelectronic devices, electromagnetic devices, electronic and electrical devices, and the materials used for construction of these items. 1.2 This practice covers the radiologic examination of these items to detect possible defective conditions within the sealed case, especially those resulting from sealing the lid to the case, and internal defects such as extraneous material (foreign objects), improper interconnecting wires, voids in the die attach material or in the glass (when sealing glass is used) or physical damage. 1.3 The values stated in inch-pound units are to be regarded as standard. No other units of measurement are included in this practice. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the app...

American Society for Testing and Materials. Philadelphia

2009-01-01T23:59:59.000Z

332

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics  

DOE Patents (OSTI)

In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Rogers, John A. (Champaign, IL); Meitl, Matthew (Raleigh, NC); Sun, Yugang (Naperville, IL); Ko, Heung Cho (Urbana, IL); Carlson, Andrew (Urbana, IL); Choi, Won Mook (Champaign, IL); Stoykovich, Mark (Dover, NH); Jiang, Hanqing (Urbana, IL); Huang, Yonggang (Glencoe, IL); Nuzzo, Ralph G. (Champaign, IL); Lee, Keon Jae (Tokyo, JP); Zhu, Zhengtao (Rapid City, SD); Menard, Etienne (Durham, NC); Khang, Dahl-Young (Seoul, KR); Kan, Seong Jun (Daejeon, KR); Ahn, Jong Hyun (Suwon, KR); Kim, Hoon-sik (Champaign, IL)

2012-07-10T23:59:59.000Z

333

Methods of forming semiconductor devices and devices formed using such methods  

SciTech Connect

Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

2013-05-21T23:59:59.000Z

334

Understanding How Semiconductors Absorb Light | U.S. DOE Office of Science  

NLE Websites -- All DOE Office Websites (Extended Search)

How Semiconductors Absorb Light How Semiconductors Absorb Light Advanced Scientific Computing Research (ASCR) ASCR Home About Research Facilities Science Highlights Benefits of ASCR Funding Opportunities Advanced Scientific Computing Advisory Committee (ASCAC) News & Resources Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846 E: sc.ascr@science.doe.gov More Information » March 2013 Understanding How Semiconductors Absorb Light Advances in how we calculate optical properties of semiconductors shorten the path to improved solar cells and other optoelectronic devices. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo

335

Multivariable analysis of spectral measurements for the characterization of semiconductor processes  

E-Print Network (OSTI)

The availability of affordable and reliable optical sensor technology and the abundance of data that these sensors now provide have created new opportunities to better characterize and control semiconductor processes in ...

White, David A. (David Allan), 1966-

2001-01-01T23:59:59.000Z

336

Prediction of semiconductor band edge positions in aqueous environments from first principles  

E-Print Network (OSTI)

The ability to predict a semiconductor's band edge positions in solution is important for the design of water-splitting photocatalyst materials. In this paper, we introduce a first-principles method to compute the ...

Wu, Yabi

337

Semiconductor-based all-optical switching for optical time-division multiplexed networks  

E-Print Network (OSTI)

All-optical switching will likely be required for future optical networks operating at data rates which exceed electronic processing speeds. Switches utilizing nonlinearities in semiconductor optical amplifiers (SOA) are ...

Robinson, Bryan S. (Bryan Shawn), 1975-

2003-01-01T23:59:59.000Z

338

Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor  

E-Print Network (OSTI)

We review recent progress in Ge active photonic devices for electronic-photonic integration on Si, demonstrating new tricks in optoelectronics from this old semiconductor material used for the first transistor more than ...

Jifeng, Liu

339

Photocatalytic Oxidation of Aqueous Organic Contaminants by Semiconductors using Visible Light Radiation  

E-Print Network (OSTI)

· Continuously mixed Light Source · T5 8 watt florescent bulbs · "Daylight Spectrum" · Color Rendering Index 75Photocatalytic Oxidation of Aqueous Organic Contaminants by Semiconductors using Visible Light

Meyers, Steven D.

340

Singlet exciton fission, a multi-exciton generation process, in organic semiconductor solar cells  

E-Print Network (OSTI)

Organic semiconductor photovoltaics hold the promise of cheap production and low manufacturing setup costs. The highest efficiency seen in research labs, ~10% today, is still too low for production. In this work we explore ...

Jadhav, Priyadarshani

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Spectroscopy and external control of optical dynamics in single semiconductor nanocrystals  

E-Print Network (OSTI)

Single molecule spectroscopy has progressed substantially in the past ten years and the accompanying progress in the optical study of single semiconductor nanocrystals has opened a new dimension in our understanding of the ...

Shimizu, Kentaro, 1975-

2002-01-01T23:59:59.000Z

342

Development of New Building Blocks for Constructing Novel Polymer Semiconductors for Organic Thin Film Transistors.  

E-Print Network (OSTI)

??Organic semiconductors are envisioned to have widespread applications in flexible displays, radio-frequency identification (RFID) tags, bio- and chem-sensors, as well as organic solar cells. Polymer (more)

Yan, Zhuangqing

2013-01-01T23:59:59.000Z

343

Optical Probe for Semiconductor: Cooperative Research and Development Final Report, CRADA Number CRD-06-206  

DOE Green Energy (OSTI)

This CRADA involves development of a new semiconductor characterization tool, Optical Probe, which can be commercialized by GT Solar. GT Solar will participate in the design and testing of this instrument that will be developed under an IPP project.

Sopori, B.

2011-02-01T23:59:59.000Z

344

Role of propagating ionisation fronts in semiconductor generation of sub-ps THz radiation  

E-Print Network (OSTI)

in standard semiconductor THz emitters may lead to identification of superior materials and excitation) 2806. [7] J.L. Oudar, D. Hulin, A. Migus, A. Antonetti, F. Alexandre, Phys. Rev. Lett. 55 (1985) 2074

Strathclyde, University of

345

Atomic-scale properties of semiconductor heterostructures probed by scanning tunneling microscopy  

SciTech Connect

The engineering of advanced semiconductor heterostructure materials and devices requires a detailed understanding of, and control over, the structure and properties of semiconductor materials and devices at the atomic to nanometer scale. Cross-sectional scanning tunneling microscopy has emerged as a unique and powerful method to characterize structural morphology and electronic properties in semiconductor epitaxial layers and device structures at these length scales. The basic experimental techniques in cross-sectional scanning tunneling microscopy are described, and some representative applications to semiconductor heterostructure characterization drawn from recent investigations in the authors laboratory are discussed. Specifically, they describe some recent studies of InP/InAsP and InAsP/InAsSb heterostructures in which nanoscale compositional clustering has been observed and analyzed.

Yu, E.T.; Zuo, S.L.; Bi, W.G.; Tu, C.W. [Univ. of California, San Diego, La Jolla, CA (United States). Dept. of Electrical and Computer Engineering; Biefeld, R.M.; Allerman, A.A. [Sandia National Labs., Albuquerque, NM (United States)

1998-05-01T23:59:59.000Z

346

Program management systems for the semiconductor processing capital equipment supply chain  

E-Print Network (OSTI)

The Capital Equipment Procurement group of Intel Corporation is responsible for developing and procuring the semiconductor processing capital equipment that is used throughout all of the company's development and manufacturing ...

Chandler, Thomas B. (Thomas Brian), 1970-

2004-01-01T23:59:59.000Z

347

Colloidal semiconductor nanocrystals as nanoscale emissive probes in light emitting diodes and cell biology  

E-Print Network (OSTI)

This thesis employs colloidal semiconductor nanocrystals (NCs) as nanoscale emissive probes to investigate the physics of light emitting diodes (LEDs), as well as to unveil properties of cells that conventional imaging ...

Huang, Hao, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

348

Product strategy in response to technological innovation in the semiconductor test industry  

E-Print Network (OSTI)

After the market boom of 2000 in the semiconductor industry changed significantly. The changes included stricter limits on capital cost spending, and the increased propensity of the industry to outsource the manufacturing ...

Lin, Robert W. (Robert Wei-Pang), 1976-

2004-01-01T23:59:59.000Z

349

X-ray and photoelectron spectroscopy of the structure, reactivity, and electronic structure of semiconductor nanocrystals  

E-Print Network (OSTI)

Figure 2-5 FESEM of 60 CdSe nanocrystals on hexanedithiol/properties of semiconductor (CdSe, InAs) nanocrystals andCdSe)..

Hamad, Kimberly S.

2000-01-01T23:59:59.000Z

350

Dilute magnetic semiconductor Cu2FeSnS4 nanocrystals with a novel zincblende structure  

Science Conference Proceedings (OSTI)

Diluted magnetic semiconductor Cu2FeSnS4 nanocrystals with a novel zincblende structure have been successfully synthesized by a hot-injection approach. Cu+, Fe2+, and Sn4+ ions occupy the same position in the ...

Xiaolu Liang; Xianhua Wei; Daocheng Pan

2012-01-01T23:59:59.000Z

351

The physics and chemistry of semiconductor nanocrystals in sol-gel derived optical microcavities  

E-Print Network (OSTI)

The incorporation of semiconductor nanocrystals (NCs) into sol-gel derived matrices presents both novel applications as well as a robust platform in which to investigate the nonlinear optical properties of NCs. This thesis ...

Chan, Yinthai

2006-01-01T23:59:59.000Z

352

Physics and simulation of transport processes in hybrid organic semiconductor devices  

E-Print Network (OSTI)

Organic semiconductors and nanomaterials promise to potentially form the basis for future efficient and cost-effective large area optoelectronic devices, such as lightemitting diodes and solar cells. Although these materials' ...

Rousseau, Ian Michael

2010-01-01T23:59:59.000Z

353

BAs-GaAs Semiconductor Alloys as a Photovoltaic Alternative to Nitride Alloys  

DOE Green Energy (OSTI)

Nitrogen alloyed III-V semiconductor compounds have been intensely studied in recent years due to unusual effects caused by nitrogen alloying. These effects are exploited in band gap engineering for specific applications such as solar cells and blue lasers.

Hart, G. L. W.; Zunger, A.

2000-01-01T23:59:59.000Z

354

Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology, 1st edition  

Science Conference Proceedings (OSTI)

A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few ...

Ayse Erol; Ayse Erol

2008-03-01T23:59:59.000Z

355

Semiconductor with protective surface coating and method of manufacture thereof. [Patent application  

DOE Patents (OSTI)

Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

Hansen, W.L.; Haller, E.E.

1980-09-19T23:59:59.000Z

356

Simple method for surface selective adsorption of semiconductor nanocrystals with nanometric resolution  

Science Conference Proceedings (OSTI)

Self-assembly methods play a major role in many modern fabrication techniques for various nanotechnology applications. In this paper we demonstrate two alternatives for self-assembled patterning within the nanoscale resolution of optically active semiconductor ...

O. Koslovsky, S. Yochelis, N. Livneh, M. G. Harats, R. Rapaport, Y. Paltiel

2012-01-01T23:59:59.000Z

357

Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates  

DOE Patents (OSTI)

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate. The crystalline semiconductor layer will be prepared to have a lattice parameter (a') that is related to the substrate lattice parameter (a). The lattice parameter (a') maybe related to the lattice parameter (a) by a scaling factor derived from a geometric relationship between the respective crystal lattices.

Norman, Andrew G; Ptak, Aaron J

2013-08-13T23:59:59.000Z

358

Electronic Properties of Disordered Organic Semiconductors via QM/MM Simulations  

E-Print Network (OSTI)

Organic semiconductors (OSCs) have recently received significant attention for their potential use in photovoltaic, light emitting diode, and field effect transistor devices. Part of the appeal of OSCs is the disordered, ...

Difley, Seth

359

Semiconductors and sustainability : energy and materials use in integrated circuit manufacturing  

E-Print Network (OSTI)

Semiconductors have propelled an incredible revolution in the way we generate, access, store, and communicate information; the effects of this revolution have transformed culture, society, and the economy. At the same time, ...

Branham, Matthew S

2008-01-01T23:59:59.000Z

360

Substrate engineering for monolithic integration of III-V semiconductors with Si CMOS technology  

E-Print Network (OSTI)

Ge virtual substrates, fabricated using Si1-xGex-.Ge, compositionally graded buffers, enable the epitaxial growth of device-quality GaAs on Si substrates, but monolithic integration of III-V semiconductors with Si CMOS ...

Dohrman, Carl Lawrence

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Laboratory Thin-Film Encapsulation of Air-Sensitive Organic Semiconductor Devices  

E-Print Network (OSTI)

We present an approach, which is compatible with both glass and polymer substrates, to in-laboratory handling and intra-laboratory shipping of air-sensitive organic semiconductors. Encapsulation approaches are presented ...

Subbarao, Samuel P.

362

Integer programming-based real-time scheduler in semiconductor manufacturing  

Science Conference Proceedings (OSTI)

This paper demonstrates how an integer programming-based real-time scheduling heuristic approach can be applied for semiconductor manufacturing. Two integer programming formulations of a simplified version of this problem are proposed to model (1) a ...

Myoungsoo Ham; Young Hoon Lee; John W. Fowler

2009-12-01T23:59:59.000Z

363

Microwave frequency division and multiplication using an optically injected semiconductor laser  

E-Print Network (OSTI)

Senior Member of the IEEE Laser and Electro-Optics Society,modelocked semiconductor lasers, Electron. Lett. , vol. 36,recovery by a ?ber ring laser employing a linear optical

Chan, Sze-Chun; Liu, Jia-Ming

2005-01-01T23:59:59.000Z

364

Application of RFID on equipment parts readiness management system of semiconductor packaging plant  

Science Conference Proceedings (OSTI)

Management of equipment parts readiness for process setup adjustment to meet variable order requirements in a semiconductor packaging plant is crucial to the health of production lines and downtime avoidance. In order to improve the current equipment ...

Wei-Ling Wang; Chiao-Tzu Huang; Shu-Jen Wang; Chia-Pao Chang; Hui-Wen Liao

2013-01-01T23:59:59.000Z

365

An iterative method for single and vertically stacked semiconductor quantum dots simulation  

Science Conference Proceedings (OSTI)

We present in this paper a computational effective nonlinear iterative method for calculating the electron energy spectra in single and vertically stacked InAs/GaAs semiconductor quantum dots. The physical model problem is formulated with the effective ... Keywords: Coupling effect, Electronic structure, Energy spectra, Modelling and simulation, Multishift QR method, Nonlinear eigenvalue problem, Semiconductor nanostructure, Single quantum dot, Vertically stacked quantum dot, Wave function

Yiming Li

2005-10-01T23:59:59.000Z

366

Method for making graded I-III-VI.sub.2 semiconductors and solar cell obtained thereby  

DOE Patents (OSTI)

Improved cell photovoltaic conversion efficiencies are obtained by the simultaneous elemental reactive evaporation process of Mickelsen and Chen for making semiconductors by closer control of the evaporation rates and substrate temperature during formation of the near contact, bulk, and near junction regions of a graded I-III-VI.sub.2, thin film, semiconductor, such as CuInSe.sub.2 /(Zn,Cd)S or another I-III-VI.sub.2 /II-VI heterojunction.

Devaney, Walter E. (Seattle, WA)

1987-08-04T23:59:59.000Z

367

From semiconductor-semiconductor transition (42 K) to the highest- Tc organic superconductor,. kappa. -(ET) sub 2 Cu(N(CN) sub 2 )Cl ( Tc = 12. 5 K)  

Science Conference Proceedings (OSTI)

The discovery of an organic superconductor with the highest transition temperature (125 K) recorded following the suppression of a semiconductor-semiconductor transition (42 K) is reported. The reported compound is a kappa-phase superconductor, kappa-(ET){sub 2}Cu(N(CN){sub 2})Cl, which is isostructural with the recently prepared ambient-pressure superconductor kappa-(ET){sub 2}Cu(N(CN){sub 2})Br with a transition temperature of 11.5 K that has been previously reported. Band electronic structural calculations show the newly discovered compound to be a two-dimensional metal. 15 refs., 2 figs.

Williams, J.M.; Kini, A.M.; Wang, H.H.; Carlson, K.D.; Geiser, U.; Montgomery, L.K.; Pyrka, G.J.; Watkins, D.M.; Kommers, J.M.; Boryschuk, S.J.; Strieby Crouch, A.V.; Kwok, W.K. (Argonne National Lab., IL (USA)); Schirber, J.E.; Overmyer, D.L. (Sandia National Labs., Albuquerque, NM (USA)); Jung, D.; Whangbo, Myunghwan (North Carolina State Univ., Raleigh (USA))

1990-09-05T23:59:59.000Z

368

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer  

DOE Patents (OSTI)

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

Spahn, Olga B. (Albuquerque, NM); Lear, Kevin L. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

369

A Novel Class of High-TC Ferromagnetic Semiconductors  

SciTech Connect

We have grown single crystals of novel ruthenates (Sr,Ba)(Fe,Co){sub 2+x}Ru{sub 4-x}O{sub 11} that exhibit long-range ferromagnetic order well above room temperature, accompanied by narrow-gap semiconducting properties that include a large anomalous Hall conductance, low resistivity, high carrier concentration and low coercive field, which are properties well suited to spintronic applications. X-ray diffraction, EDX, neutron diffraction and x-ray absorption measurements on single crystals firmly establish the 'R-Type' hexagonal ferrite structure (space group P6{sub 3}/mmc, No 194) and single-phase nature of all samples. The electronic structure and physical properties can be tuned by simple chemical substitution of two elements, M = Fe or Co, or by varying the relative concentration of 3d solutes and 4d Ru. Our magnetotransport, x-ray magnetic circular dichroism and magnetic moment data suggest the mechanism for FM order is quite different from that governing known dilute magnetic semiconductors.

Shlyk, L. V.; Kryukov, S. A.; De Long, L. E.; Schupp-Niewa, B.; Niewa, R.; Lynn, J. W.; Huang, Qing; Arenholz, E.; Piamonteze, C.

2008-05-30T23:59:59.000Z

370

Optimal doping control of magnetic semiconductors via subsurfactant epitaxy  

SciTech Connect

Dilute magnetic semiconductors (DMS) with high ferromagnetic ordering temperatures (T{sub c}) have vast potential for advancing spin-based electronics or 'spintronics'. To date, achieving high-T{sub c} DMS typically required doping levels of order 5%. Such high doping levels inevitably compromise the structural homogeneity and carrier mobility of the DMS. Here, we establish 'subsurfactant epitaxy' as a novel kinetic pathway for synthesizing Mn-doped germanium with T{sub c} much higher than room temperature, at dramatically reduced doping levels. This is accomplished by optimal control of the diffusion kinetics of the dopant atoms near the growth front in two separate deposition steps. The first involves a submonolayer dose of Mn on Ge(100) at low temperature, which populates subsurface interstitial sites with Mn while suppressing lateral Mn diffusion and clustering. The second step involves epitaxial growth of Ge at elevated temperature, taking advantage of the strong floating ability of the interstitial Mn dopants towards the newly defined subsurface sites at the growth front. Most remarkably, the Mn dopants trapped inside the film are uniformly distributed at substitutional sites, and the resulting film exhibits ferromagnetism above 400 K at the nominal doping level of only 0.2%.

Zeng, Changgan [ORNL; Zhang, Zhenyu [ORNL; van Benthem, Klaus [ORNL; Chisholm, Matthew F [ORNL; Weitering, Harm H [ORNL

2008-01-01T23:59:59.000Z

371

Semiconductor grade, solar silicon purification project. Final technical report  

DOE Green Energy (OSTI)

Motorola's low cost poly silicon program is described. In the process, SiF/sub 4/, a low cost by-product is reacted with mg silicon to form SiF/sub 2/ gas which is polymerized. The (SiF/sub 2/)/sub x/ polymer is heated forming volatile Si/sub x/F/sub y/ homologues which disproportionate (C.V.D.) on a silicon particle bed forming silicon and SiF/sub 4/. During the initial phases of the investigation the silicon analysis procedure relied heavily on S.S.M.S. and E.S. analysis. This analysis demonstrated that major purification had occurred and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, more recent electrical analysis via crystal growth reveals that the product contains compensated phosphorus and boron. Work on the control or removal of the electrically active donors and acceptors could yield a product suitable for solar application. The low projected product cost and short energy payback time suggest that the economics of this process will result in a cost less than the J.P.L./D.O.E. goal of $10/Kg (1975 dollars). Finally, assuming a successful demonstration of a pilot facility, the process appears to be readily scalable to a major silicon purification facility as was proposed by Motorola and R. Katzen.

Ingle, W.M.; Rosler, R.S.; Thompson, S.W.; Chaney, R.E.

1979-12-10T23:59:59.000Z

372

Measuring Imputed Costs in the Semiconductor Equipment Supply Chain  

E-Print Network (OSTI)

We consider the order fulllment process of a customized capital equipment supplier. Prior to receiving a rm purchase order from the customer, the supplier receives a series of shared forecasts, which are called `soft orders'. Facing a stochastic internal manufacturing lead-time, the supplier must decide at what time to begin the fulllment of the order. This decision requires a trade-o between starting too early, leading to potential holding or cancellation cost, and the cost of starting too late, leading to potential loss of goodwill. We collect detailed data of shared forecasts, actual purchase orders, production lead-times, and delivery dates for a supplier-buyer dyad in the semiconductor equipment supply chain. Under the assumption that the supplier acts rationally, optimally balancing the cancellation, holding, and delay costs, we are able to estimate the corresponding cost parameters based on the observed data. Our estimation results suggest that the cost of cancellation is four times higher and the holding cost is two times higher than the delay cost. In other words, the supplier is very conservative when commencing the order fulllment, which negates the eectiveness of the overall forecast sharing mechanism. 1 1

Morris A. Cohen; Teck H. Ho; Justin Z. Ren; Christian Terwiesch

2001-01-01T23:59:59.000Z

373

Sputter deposition of semiconductor superlattices for thermoelectric applications  

DOE Green Energy (OSTI)

Theoretical dramatic improvement of the thermoelectric properties of materials by using quantum confinement in novel semiconductor nanostructures has lead to considerable interest in the thermoelectric community. Therefore, we are exploring the critical materials issues for fabrication of quantum confined structures by magnetron sputtering in the lead telluride and bismuth telluride families of materials. We have synthesized modulated structures from thermoelectric materials with bilayer periods of as little as 3.2 nm and shown that they are stable at deposition temperatures high enough to grow quality films. Issues critical to high quality film growth have been investigated such as nucleation and growth conditions and their effect on crystal orientation and growth morphology. These investigations show that nucleating the film at a temperature below the growth temperature of optimum electronic properties produces high quality films. Our work with sputter deposition, which is inherently a high rate deposition process, builds the technological base necessary to develop economical production of these advanced materials. High deposition rate is critical since, even if efficiencies comparable with CFC based refrigeration systems can be achieved, large quantities of quantum confined materials will be necessary for cost-competitive uses.

Wagner, A.V.; Foreman, R.J.; Farmer, J.C.; Barbee, T.W.

1996-11-01T23:59:59.000Z

374

Cluster Generation Under Pulsed Laser Ablation Of Compound Semiconductors  

SciTech Connect

A comparative experimental study of pulsed laser ablation in vacuum of two binary semiconductors, zinc oxide and indium phosphide, has been performed using IR- and visible laser pulses with particular attention to cluster generation. Neutral and cationic Zn{sub n}O{sub m} and In{sub n}P{sub m} particles of various stoichiometry have been produced and investigated by time-of-flight mass spectrometry. At ZnO ablation, large cationic (n>9) and all neutral clusters are mainly stoichiometric in the ablation plume. In contrast, indium phosphide clusters are strongly indium-rich with In{sub 4}P being a magic cluster. Analysis of the plume composition upon laser exposure has revealed congruent vaporization of ZnO and a disproportionate loss of phosphorus by the irradiated InP surface. Plume expansion conditions under ZnO ablation are shown to be favorable for stoichiometric cluster formation. A delayed vaporization of phosphorus under InP ablation has been observed that results in generation of off-stoichiometric clusters.

Bulgakov, Alexander V.; Evtushenko, Anton B.; Shukhov, Yuri G. [Institute of Thermophysics SB RAS, Lavrentyev Ave. 1, 630090 Novosibirsk (Russian Federation); Ozerov, Igor; Marine, Wladimir [Universite de la Mediterranee, CINaM, UPR CNRS 3118, 13288 Marseille (France)

2010-10-08T23:59:59.000Z

375

Utility-Scale Silicon Carbide Semiconductor: Monolithic Silicon Carbide Anode Switched Thyristor for Medium Voltage Power Conversion  

Science Conference Proceedings (OSTI)

ADEPT Project: GeneSiC is developing an advanced silicon-carbide (SiC)-based semiconductor called an anode-switched thyristor. This low-cost, compact SiC semiconductor conducts higher levels of electrical energy with better precision than traditional silicon semiconductors. This efficiency will enable a dramatic reduction in the size, weight, and volume of the power converters and electronic devices it's used in.GeneSiC is developing its SiC-based semiconductor for utility-scale power converters. Traditional silicon semiconductors can't process the high voltages that utility-scale power distribution requires, and they must be stacked in complicated circuits that require bulky insulation and cooling hardware. GeneSiC's semiconductors are well suited for high-power applications like large-scale renewable wind and solar energy installations.

None

2010-09-01T23:59:59.000Z

376

Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors  

SciTech Connect

A photovolatic device is described comprising: a light transmissive substrate; an electrically conductive, transparent layer disposed on the substrate as a first electrode; a layer of a first semiconductor disposed on the first electrode; a p-type thin film of a tellurium-containing II-VI semiconductor disposed on the first semiconductor to form a photoresponsive junction with it; and a second electrode contacting the thin film.

Szabo, L.F.; Biter, W.J.

1988-04-05T23:59:59.000Z

377

Electrical Transport Through a Single Nanoscale SemiconductorBranch Point  

DOE Green Energy (OSTI)

Semiconductor tetrapods are three dimensional branched nanostructures, representing a new class of materials for electrical conduction. We employ the single electron transistor approach to investigate how charge carriers migrate through single nanoscale branch points of tetrapods. We find that carriers can delocalize across the branches or localize and hop between arms depending on their coupling strength. In addition, we demonstrate a new single-electron transistor operation scheme enabled by the multiple branched arms of a tetrapod: one arm can be used as a sensitive arm-gate to control the electrical transport through the whole system. Electrical transport through nanocrystals, molecules, nanowires and nanotubes display novel quantum phenomena. These can be studied using the single electron transistor approach to successively change the charge state by one, to reveal charging energies, electronic level spacings, and coupling between electronic, vibrational, and spin degrees of freedom. The advent of colloidal synthesis methods that produce branched nanostructures provides a new class of material which can act as conduits for electrical transport in hybrid organic-inorganic electrical devices such as light emitting diodes and solar cells. Already, the incorporation of branched nanostructures has yielded significant improvements in nanorod/polymer solar cells, where the specific pathways for charge migration can have a significant impact on device performance. Progress in this area requires an understanding of how electrons and holes migrate through individual branch points, for instance do charges delocalize across the branches or do they localize and hop between arms. Here we employ the single electron transistor approach to investigate the simplest three dimensional branched nanostructure, the semiconductor tetrapod, which consists of a pyramidal shaped zinc blende-structured ''core'' with four wurzite-structured arms projecting out at the tetrahedral angle. Monodisperse CdTe tetrapods with arms 8 nm in diameter and 150 nm in length were synthesized as previously reported. The tetrapods dispersed in toluene were deposited onto {approx}10 nm thick Si{sub 3}N{sub 4} dielectrics with alignment markers and a back gate (see Supporting Information). A tetrapod spontaneously orients with one arm pointing perpendicularly away from the substrate and three arms projecting down towards the surface. Individual 60 nm-thick Pd electrodes were placed by EBL onto each of the three arms downwards so that there are four terminals (three arms and a back gate) as shown schematically in Fig. 1 top inset. Figure 1 bottom inset shows a typical scanning electron micrograph (SEM) of the devices. The center brighter spot is due to the fourth arm pointing up away from the substrate although its controlled breaking is possible. The separation between the metal electrodes and the tetrapod branch point ranges from 30 to 80 nm in our devices. The devices were loaded into a He{sup 4}-flow cryostat for low-temperature ({approx}5K) electrical measurements.

Cui, Yi; Banin, Uri; Bjork, Mikael T.; Alivisatos, A. Paul

2005-06-09T23:59:59.000Z

378

Charge and Spin Transport in Dilute Magnetic Semiconductors  

SciTech Connect

This proposal to the DOE outlines a three-year plan of research in theoretical and computational condensed-matter physics, with the aim of developing a microscopic theory for charge and spin dynamics in disordered materials with magnetic impurities. Important representatives of this class of materials are the dilute magnetic semiconductors (DMS), which have attracted great attention as a promising basis for spintronics devices. There is an intense experimental effort underway to study the transport properties of ferromagnetic DMS such as (Ga,Mn)As, and a number of interesting features have emerged: negative magnetoresistance, anomalous Hall effect, non-Drude dynamical conductivity, and resistivity maxima at the Curie temperature. Available theories have been able to account for some of these features, but at present we are still far away from a systematic microscopic understanding of transport in DMS. We propose to address this challenge by developing a theory of charge and spin dynamics based on a combination of the memory-function formalism and time-dependent density functional theory. This approach will be capable of dealing with two important issues: (a) the strong degree of correlated disorder in DMS, close to the localization transition (which invalidates the usual relaxation-time approximation to the Boltzmann equation), (b) the essentially unknown role of dynamical many-body effects such as spin Coulomb drag. We will calculate static and dynamical conductivities in DMS as functions of magnetic order and carrier density, which will advance our understanding of recent transport and infrared absorption measurements. Furthermore, we will study collective plasmon excitations in DMS (3D, 2D and quantum wells), whose linewidths could constitute a new experimental probe of the correlation of disorder, many-body effects and charge and spin dynamics in these materials.

Ullrich, Carsten A.

2009-07-23T23:59:59.000Z

379

Diluted magnetic semiconductor effects in Mn-implanted silicon carbide  

Science Conference Proceedings (OSTI)

Light transmission and Faraday rotation spectra measured at the temperature of 2 K were compared for silicon carbide single crystals of 4H polytype (4H-SiC), implanted with 3.8 x 10{sup 16} cm{sup -2} of Mn ions at the beam energy of 190 keV, and a control 4H-SiC single crystal sample, which was not implanted. Mn ion implantation led to the creation of a Mn-doped surface layer with the average Mn concentration of 10{sup 21} cm{sup -3} and a thickness of approximately 0.2 {mu}m. Transmission of light through the implanted crystal changed only slightly in comparison with the control sample, which however, corresponded to a relatively strong attenuation in the implanted layer. This was interpreted as a result of scattering, which emerges in the surface layer due to optical nonuniformities, created by the high energy ion irradiation. The presence of a thin Mn-ion-containing surface layer led, despite its small thickness, to noticeable changes in the sample Faraday rotation spectra. The estimated values of the Verdet constant for this layer were about three orders of magnitude larger and of opposite sign compared to the Verdet constant values of the undoped sample. Magnetic field dependencies of the Faraday rotation contribution from the implanted layer were found to be saturating functions, which points to a proportionality of the Faraday rotation to the magnetization of the paramagnetic Mn ion subsystem. Based on these findings we conclude that the Mn-implanted SiC layer exhibits magneto-optical properties typical of a diluted magnetic semiconductor. At the same time, no ferromagnetic ordering was observed in the studied (Si, Mn)C sample.

Komarov, A. V.; Ryabchenko, S. M. [Institute of Physics of the National Academy of Sciences of Ukraine, 46 Nauki Ave., Kiev 03028 (Ukraine); Los, A. V. [ISS Ltd., Semiconductors and Circuits Lab, 15 Bozhenko Street, Kiev 03680 (Ukraine); Freescale Semiconductor Ukraine LLC., 15 Bozhenko Street, Kiev 03680 (Ukraine); Romanenko, S. M. [ISS Ltd., Semiconductors and Circuits Lab, 15 Bozhenko Street, Kiev 03680 (Ukraine)

2011-04-15T23:59:59.000Z

380

Synthesis and Manipulation of Semiconductor Nanocrystals inMicrofluidic Reactors  

SciTech Connect

Microfluidic reactors are investigated as a mechanism tocontrol the growth of semiconductor nanocrystals and characterize thestructural evolution of colloidal quantum dots. Due to their shortdiffusion lengths, low thermal masses, and predictable fluid dynamics,microfluidic devices can be used to quickly and reproducibly alterreaction conditions such as concentration, temperature, and reactiontime, while allowing for rapid reagent mixing and productcharacterization. These features are particularly useful for colloidalnanocrystal reactions, which scale poorly and are difficult to controland characterize in bulk fluids. To demonstrate the capabilities ofnanoparticle microreactors, a size series of spherical CdSe nanocrystalswas synthesized at high temperature in a continuous-flow, microfabricatedglass reactor. Nanocrystal diameters are reproducibly controlled bysystematically altering reaction parameters such as the temperature,concentration, and reaction time. Microreactors with finer control overtemperature and reagent mixing were designed to synthesize nanoparticlesof different shapes, such as rods, tetrapods, and hollow shells. The twomajor challenges observed with continuous flow reactors are thedeposition of particles on channel walls and the broad distribution ofresidence times that result from laminar flow. To alleviate theseproblems, I designed and fabricated liquid-liquid segmented flowmicroreactors in which the reaction precursors are encapsulated inflowing droplets suspended in an immiscible carrier fluid. The synthesisof CdSe nanocrystals in such microreactors exhibited reduced depositionand residence time distributions while enabling the rapid screening aseries of samples isolated in nL droplets. Microfluidic reactors werealso designed to modify the composition of existing nanocrystals andcharacterize the kinetics of such reactions. The millisecond kinetics ofthe CdSe-to-Ag2Se nanocrystal cation exchange reaction are measured insitu with micro-X-ray Absorption Spectroscopy in silicon microreactorsspecifically designed for rapid mixing and time-resolved X-rayspectroscopy. These results demonstrate that microreactors are valuablefor controlling and characterizing a wide range of reactions in nLvolumes even when nanoscale particles, high temperatures, causticreagents, and rapid time scales are involved. These experiments providethe foundation for future microfluidic investigations into the mechanismsof nanocrystal growth, crystal phase evolution, and heterostructureassembly.

Chan, Emory Ming-Yue

2006-12-19T23:59:59.000Z

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381

An investigation of corrosion in semiconductor bridge explosive devices.  

SciTech Connect

In the course of a failure investigation, corrosion of the lands was occasionally found in developmental lots of semiconductor bridge (SCB) detonators and igniters. Evidence was found in both detonators and igniters of the gold layer being deposited on top of a corroded aluminum layer, but inspection of additional dies from the same wafer did not reveal any more corroded parts. In some detonators, evidence was found that corrosion of the aluminum layer also happened after the gold was deposited. Moisture and chloride must both be present for aluminum to corrode. A likely source for chloride is the adhesive used to bond the die to the header. Inspection of other SCB devices, both recently manufactured and manufactured about ten years ago, found no evidence for corrosion even in devices that contained SCBs with aluminum lands and no gold. Several manufacturing defects were noted such as stains, gouges in the gold layer due to tooling, and porosity of the gold layer. Results of atmospheric corrosion experiments confirmed that devices with a porous gold layer over the aluminum layer are susceptible to extensive corrosion when both moisture and chlorine are present. The extent of corrosion depends on the level of chlorine contamination, and corrosion did not occur when only moisture was present. Elimination of the gold plating on the lands eliminated corrosion of the lands in these experiments. Some questions remain unanswered, but enough information was gathered to recommend changes to materials and procedures. A second lot of detonators was successfully built using aluminum SCBs, limiting the use of Ablebond{trademark} adhesive, increasing the rigor in controlling exposure to moisture, and adding inspection steps.

Klassen, Sandra Ellen; Sorensen, Neil Robert

2007-05-01T23:59:59.000Z

382

Production of films and powders for semiconductor device applications  

DOE Patents (OSTI)

A process is described for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cu{sub x}Se{sub n}, wherein x=1--2 and n=1--3; (2) Cu{sub x}Ga{sub y}Se{sub n}, wherein x=1--2, y=0--1 and n=1--3; (3) Cu{sub x}In{sub y}Se{sub n}, wherein x=1--2.27, y=0.72--2 and n=1--3; (4) Cu{sub x}(InGa){sub y}Se{sub n}, wherein x=1--2.17, y=0.96--2 and n=1--3; (5) In{sub y}Se{sub n}, wherein y=1--2.3 and n=1--3; (6) Cu{sub x}S{sub n}, wherein x=1--2 and n=1--3; and (7) Cu{sub x}(InGa){sub y}(SeS){sub n}, wherein x=1--2, y=0.07--2 and n=0.663--3. A reaction vessel containing therein a substrate upon which will form one or more layers of semiconductor material is provided, and relevant solution mixtures are introduced in a sufficient quantity for a sufficient time and under favorable conditions into the vessel to react with each other to produce the resultant salt being prepared and deposited as one or more layers on the substrate and as a powder on the floor of the vessel. Hydrazine is present during all reaction processes producing non-gallium containing products and optionally present during reaction processes producing gallium-containing products to function as a strong reducing agent and thereby enhance reaction processes. 4 figs.

Bhattacharya, R.N.; Noufi, R.; Li Wang

1998-03-24T23:59:59.000Z

383

The physics and chemistry of transport in CdSe quantum dot solids  

E-Print Network (OSTI)

Semiconductor quantum dots (QDs) have tunable opto-electronic properties and can be chemically synthesized and manipulated with ease, making them a promising novel material for many diverse applications. An understanding ...

Jarosz, Mirna, 1981-

2004-01-01T23:59:59.000Z

384

Application of CL/EBIC-SEM Techniques for Characterization of ...  

Science Conference Proceedings (OSTI)

Abstract Scope, Multijunction III-V semiconductors' based solar cells grown on Ge are ... photovoltaic technology due to the high efficiency and radiation tolerance. ... damage on the opto-electronic properties of each individual junction cell and...

385

Controlled Metal Photodeposition  

A reliable syntheses of semiconductor-metal heterostructure has been developed to enable application of materials in catalytic, magnetic, and opto-electronic devices, and Iowa State University, The Ames Laboratory's Contractor, is looking for ...

386

2 www.trnmag.com Technology Research News February 23/March 2, 2005 Process yields semiconductor foam  

E-Print Network (OSTI)

Wayne State University have made crystalline aerogels -- new semiconductor materials that are very porous, giving them very high surface areas. Unlike conventional aerogels, the researchers' materials

Ruina, Andy L.

387

Photodeposition of Pt on Colloidal CdS and CdSe/CdS Semiconductor Nanostructures  

DOE Green Energy (OSTI)

Semiconductor photocatalysis has been identified as a promising avenue for the conversion of solar energy into environmentally friendly fuels, most notably by the production of hydrogen from water.[1-5] Nanometer-scale materials in particular have attracted considerable scientific attention as the building blocks for light-harvesting applications.[6,7] Their desirable attributes include tunability of the optical properties with size, amenability to relatively inexpensive low-temperature processing, and a high degree of synthetic sophistication leading to increasingly complex and multi-functional architectures. For photocatalysis in particular, the high surface-to-volume ratios in nanoscale materials should lead to an increased availability of carriers for redox reactions on the nanoparticle surface. Recombination of photoexcited carriers directly competes with photocatalytic activity.[3] Charge separation is often achieved with multi-component heterostructures. An early example is the case of TiO2 powders functionalized with Pt and RuO2 particles, where photoexcited electrons are transferred to Pt (the reduction site) and holes to RuO2 (the oxidation site).[8] More recently, many colloidally synthesized nanometer-scale metal-semiconductor heterostructures have been reported.[7,9,10] A majority of these structures are made by thermal methods.[7,10] We have chosen to study photochemical formation of metal-semiconductor heterostructures. The detailed understanding of the mechanisms involved in photodeposition of metals on nanometer-scale semiconductors is necessary to enable a high degree of synthetic control. At the same time, because the results of metal deposition can be directly observed by electron microscopy, it can be used to understand how factors such as nanocrystal composition, shape, carrier dynamics, and surface chemistry influence the photochemical properties of semiconductor nanocrystals. In this communication, we report on the photodeposition of Pt on colloidal CdS and CdSe/CdS core/shell nanocrystals. Among the II-VI semiconductors, CdS is of particular interest because it has the correct band alignment for water photolysis[2] and has been demonstrated to be photocatalytically active.[11-16] We have found that the photoexcitation of CdS and CdSe/CdS in the presence of an organometallic Pt precursor leads to deposition of Pt nanoparticles on the semiconductor surface. Stark differences are observed in the Pt nanoparticle location on the two substrates, and the photodeposition can be completely inhibited by the modification of the semiconductor surface. Our results suggest that tuning of the semiconductor band structure, spatial organization and surface chemistry should be crucial in the design of photocatalytic nanostructures.

Dukovic, Gordana; Merkle, Maxwell G.; Nelson, James H.; Hughes, Steven M.; Alivisatos, A. Paul

2008-08-06T23:59:59.000Z

388

Details in Semiconductors Gordon Conference, New London, NH, August 3-8, 2008  

SciTech Connect

Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in homogeneous and structured semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, with an increases emphasis on nanostructures as compared to previous conferences. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference deals with defects in a broad range of bulk and nanoscale electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, doped nanoparticles, and organic semiconductors. Presentations of state-of-the-art theoretical methods will contribute to a fundamental understanding of atomic-scale phenomena. The program consists of about twenty invited talks, with plenty of discussion time, and a number of contributed poster sessions. Because of the large amount of discussion time, the conference provides an ideal forum for dealing with topics that are new and/or controversial.

Shengbai Zhang and Nancy Ryan Gray

2009-09-16T23:59:59.000Z

389

Optically Detected Magnetic Resonance Studies on ?-conjugated semiconductor systems  

Science Conference Proceedings (OSTI)

Optically Detected Magnetic Resonance (ODMR) techniques were used to investigate the dynamics of excitons and charge carriers in ?-conjugated organic semiconductors. Degradation behavior of the negative spin-1/2 electroluminescence-detected magnetic resonance (ELDMR) was observed in Alq3 devices. The increase in the resonance amplitude implies an increasing bipolaron formation during degradation, which might be the result of growth of charge traps in the device. The same behavior of the negative spin-1/2 ELDMR was observed in 2wt% Rubrene doped Tris(8-hydroxyquinolinato)aluminium (Alq3) devices. However, with increasing injection current, a positive spin-1/2 ELDMR, together with positive spin 1 triplet powder patterns at {delta}m{sub S}={+-}1 and {delta}m{sub S}={+-}2, emerges. Due to the similarities in the frequency dependences of single and double modulated ELDMR and the photoluminescence-detected magnetic resonance (PLDMR) results in poly[2-methoxy-5-(2 -ethyl-hexyloxy)-1,4-phenyl ene vinylene] (MEH-PPV) films, the mechanism for this positive spin-1/2 ELDMR was assigned to enhanced triplet-polaron quenching under resonance conditions. The ELDMR in rubrene doped Alq3 devices provides a path to investigate charge distribution in the device under operational conditions. Combining the results of several devices with different carrier blocking properties and the results from transient EL, it was concluded trions not only exist near buffer layer but also exist in the electron transport layer. This TPQ model can also be used to explain the positive spin-1/2 PLDMR in poly(3-hexylthiophene) (P3HT) films at low temperature and in MEH-PPV films at various temperatures up to room temperature. Through quantitative analysis, TE-polaron quenching (TPQ) model is shown having the ability to explain most behaviors of the positive spin-1/2 resonance. Photocurrent detected magnetic resonance (PCDMR) studies on MEH-PPV devices revealed a novel transient resonance signal. The signal may originate from the higher concentration of deep traps near cathode. A quantitative analysis based on this assumption was carried out and found to be consistent with the experimental results.

Chen, Ying

2011-12-06T23:59:59.000Z

390

Building Structural Complexity in Semiconductor Nanocrystals through Chemical Transformations  

Science Conference Proceedings (OSTI)

Methods are presented for synthesizing nanocrystal heterostructures comprised of two semiconductor materials epitaxially attached within individual nanostructures. The chemical transformation of cation exchange, where the cations within the lattice of an ionic nanocrystal are replaced with a different metal ion species, is used to alter the chemical composition at specific regions ofa nanocrystal. Partial cation exchange was performed in cadmium sulfide (CdS) nanorods of well-defined size and shape to examine the spatial organization of materials within the resulting nanocrystal heterostructures. The selectivity for cation exchange to take place at different facets of the nanocrystal plays an important role in determining the resulting morphology of the binary heterostructure. The exchange of copper (I) (Cu+) cations in CdS nanorods occurs preferentially at the ends of the nanorods. Theoretical modeling of epitaxial attachments between different facets of CdS and Cu2S indicate that the selectivity for cation exchange at the ends of the nanorods is a result of the low formation energy of the interfaces produced. During silver (I) (Ag+) cation exchange in CdS nanorods, non-selective nucleation of silver sulfide (Ag2S), followed by partial phase segregation leads to significant changes in the spatial arrangement of CdS and Ag2S regions at the exchange reaction proceeds through the nanocrystal. A well-ordered striped pattern of alternating CdS and Ag2S segments is found at intermediate fractions of exchange. The forces mediating this spontaneous process are a combination of Ostwald ripening to reduce the interfacial area along with a strain-induced repulsive interaction between Ag2S segments. To elucidate why Cu+ and Ag+ cation exchange with CdS nanorods produce different morphologies, models for epitaxial attachments between various facets of CdS with Cu2S or Ag2S lattices were used to calculate interface formation energies. The formation energies indicate the favorability for interface nucleation at different facets of the nanorod and the stability of the interfaces during growth of the secondary material (Cu2S or Ag2S) within the CdS nanocrystal. The physical properties of the CdS-Ag2S and CdS-Cu2S binary nanorods are discussed in terms of the electronic structure of their components and the heterostructure morphology.

Sadtler, Bryce F

2009-05-20T23:59:59.000Z

391

Low Energy Ion Implantationin Semiconductor Manufacturing | U.S. DOE Office  

Office of Science (SC) Website

Low Energy Ion Implantation in Low Energy Ion Implantation in Semiconductor Manufacturing Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Spinoff Applications Spinoff Archives SBIR/STTR Applications of Nuclear Science and Technology Funding Opportunities Nuclear Science Advisory Committee (NSAC) News & Resources Contact Information Nuclear Physics U.S. Department of Energy SC-26/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E: sc.np@science.doe.gov More Information » Spinoff Archives Low Energy Ion Implantation in Semiconductor Manufacturing Print Text Size: A A A RSS Feeds FeedbackShare Page Application/Instrumentation: Low Energy Ion Implantation in Semiconductor Manufacturing Developed at: BNL, New York; High Current Electronic Institute, Tomsk, Russia; Institute for Theoretical and Experimental Physics (ITEP), Moscow, Russia

392

Argonne CNM News: New inorganic semiconductor layers hold promise for solar  

NLE Websites -- All DOE Office Websites (Extended Search)

New inorganic semiconductor layers hold promise for solar energy New inorganic semiconductor layers hold promise for solar energy Inorganic surface ligands Inorganic surface ligands enable facile electron transport between quantum dots and opened novel opportunities for using nanostructures in solar cells. Inorganic dot array Arrays of quantum dots allow fabrication of solar cells by printing and other inexpensive techniques. A team of users from the University of Chicago, working with the NanoBio Interfaces Group, has demonstrated a method that could produce cheaper semiconductor layers for solar cells. The inorganic nanocrystal arrays, created by spraying a new type of colloidal "ink," have excellent electron mobility and could be a step toward addressing fundamental problems with current solar technology.

393

Surface Plasmon Excitation via Au Nanoparticles in CdSe Semiconductor  

SciTech Connect

We present experimental evidence for the large Raman and photoluminescence enhancement in CdSe semiconductor films grown on Si and glass substrates due to excitation of surface plasmon resonances in proximate gold metal nanoparticles deposited on the surface of CdSe film. Heterojunction diodes containing n-CdSe on p-Si semiconductor were fabricated and the surface of the diodes was in situ coated with Au nanoparticles using the ultra-high vacuum pulsed-laser deposition technique. A significant enhancement of the photocurrent was obtained in CdSe/p-Si containing Au nanoparticles on the surface compared to CdSe/p-Si due to the enhanced photo-absorption within the semiconductor by the phenomenon of surface plasmon resonance. These observations suggest a variety of approaches for improving the performance of devices such as photodetectors, photovoltaic, and related devices, including biosensors.

Pradhan, A. K. [Department of Engineering Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States); Department of Physics, Fisk University, 1000, 17 Avenue North, Nashville, TN 37208 (United States); Konda, R. B.; Mundle, R.; Mustafa, H.; Bamiduro, O. [Department of Engineering Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States); Roy, U. N.; Cui, Y. [Department of Physics, Fisk University, 1000, 17 Avenue North, Nashville, TN 37208 (United States); Burger, A. [Department of Physics, Fisk University, 1000, 17 Avenue North, Nashville, TN 37208 (United States); Department of Engineering Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States)

2008-10-23T23:59:59.000Z

394

Spectroscopy of Charge Carriers and Traps in Field-Doped Organic Semiconductors  

SciTech Connect

This research project aims to achieve quantitative and molecular level understanding of charge carriers and traps in field-doped organic semiconductors via in situ optical absorption spectroscopy, in conjunction with time-resolved electrical measurements. During the funding period, we have made major progress in three general areas: (1) probed charge injection at the interface between a polymeric semiconductor and a polymer electrolyte dielectric and developed a thermodynamic model to quantitatively describe the transition from electrostatic to electrochemical doping; (2) developed vibrational Stark effect to probe electric field at buried organic semiconductor interfaces; (3) used displacement current measurement (DCM) to study charge transport at organic/dielectric interfaces and charge injection at metal/organic interfaces.

Zhu, Xiaoyang; Frisbie, C Daniel

2012-08-13T23:59:59.000Z

395

Excitation density distribution in electron-beam-pumped ZnSe semiconductor lasers  

Science Conference Proceedings (OSTI)

The spatial density distribution of the absorbed energy in ZnSe semiconductor lasers excited by electrons with energies from 2 keV to 1 MeV is calculated by the Monte-Carlo method. Approximate analytic expressions determining the absorbed energy of electrons in ZnSe are presented. The pump power threshold in a semiconductor quantum-well ZnSe structure is experimentally determined. The lasing threshold in such structures is estimated as a function of the electron energy. (active media)

Donskoi, E N; Zalyalov, A N; Petrushin, O N; Savel'ev, Yu A; Tarasov, M D; Shigaev, Yu S [Russian Federal Nuclear Center 'All-Russian Scientific Research Institute of Experimental Physics', Sarov, Nizhnii Novgorod Region (Russian Federation); Zhdanova, E V; Zverev, M M; Peregudov, D V [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation); Ivanov, S V; Sedova, I V; Sorokin, S V [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

2008-12-31T23:59:59.000Z

396

Towards large-scale multi-socket, multicore parallel simulations: Performance of an MPI-only semiconductor device simulator  

Science Conference Proceedings (OSTI)

This preliminary study considers the scaling and performance of a finite element (FE) semiconductor device simulator on a set of multi-socket, multicore architectures with nonuniform memory access (NUMA) compute nodes. These multicore architectures include ... Keywords: Drift-diffusion, MPI-only, Multicore, Multicore efficiency, Multilevel preconditioners, Newton-Krylov, Semiconductor devices

Paul T. Lin; John N. Shadid

2010-09-01T23:59:59.000Z

397

Electrical and physical characteristics of HfLaON-gated metal-oxide-semiconductor capacitors with various nitrogen concentration profiles  

Science Conference Proceedings (OSTI)

The comparative studies of electrical and physical characteristics of HfLaON-gated metal-oxide-semiconductor (MOS) capacitors with various nitrogen concentration profiles (NCPs) were investigated. Various NCPs in HfLaON gate dielectrics were adjusted ... Keywords: Charge trapping, Current-conduction, High-k dielectric, Metal-oxide-semiconductor (MOS), Nitrogen concentration profiles (NCPs)

Chin-Lung Cheng; Jeng-Haur Horng; Hung-Yang Tsai

2011-02-01T23:59:59.000Z

398

P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same  

DOE Patents (OSTI)

An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

Guha, Subhendu (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1988-10-04T23:59:59.000Z

399

MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics  

SciTech Connect

Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.

Palmstrom, Chris [University of California, Santa Barbara

2009-07-01T23:59:59.000Z

400

Ferromagnetism in Doped Thin-Film Oxide and Nitride Semiconductors and Dielectrics  

SciTech Connect

The principal goal in the field of high-Tc ferromagnetic semiconductors is the synthesis, characterization and utilization of semiconductors which exhibit substantial carrier spin polarization at and above room temperature. Such materials are of critical importance in the emerging field of semiconductor spintronics. The interaction leading to carrier spin polarization, exchange coupling between the dopant spins and the valence or conduction band, is known to be sufficiently weak in conventional semiconductors, such as GaAs and Si, that magnetic ordering above cryogenic temperatures is essentially impossible. Since the provocative theoretical predictions of Tc above ambient in p-Mn:ZnO and p-Mn:GaN (T. Dietl et al., Science 287 1019 (2000)), and the observation of room-temperature ferromagnetism in Co:TiO2 anatase (Y. Matsumoto et al., Science 291 854 (2001)), there has been a flurry of work in oxides and nitrides doped with transition metals with unpaired d electrons. It has even been claimed that room-temperature ferromagnetism can be obtained in certain d0 transition metals oxides without a dopant. In this Report, the field of transition metal doped oxides and nitrides is critically reviewed and assessed from a materials science perspective. Since much of the field centers around thin film growth, this Report focuses on films prepared not only by conventional vacuum deposition methods, but also by spin coating colloidal nanoparticles.

Chambers, Scott A.

2006-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Injecting and controlling spin populations and currents in semiconductors using optically induced quantum interference effects  

Science Conference Proceedings (OSTI)

Creating a new spin-based electronics (often called "spin-electronics" or "spintronics") is one of the hot topics in the current solid-state physics and electronics research. In order to utilize the spin degree of freedom in solids, particularly in semiconductors ...

Masaaki Tanaka

2005-07-01T23:59:59.000Z

402

Sputtered pin amorphous silicon semi-conductor device and method therefor  

DOE Patents (OSTI)

A high efficiency amorphous silicon PIN semi-conductor device is constructed by the sequential sputtering of N, I and P layers of amorphous silicon and at least one semi-transparent ohmic electrode. A method of construction produces a PIN device, exhibiting enhanced physical integrity and facilitates ease of construction in a singular vacuum system and vacuum pump down procedure.

Moustakas, Theodore D. (Berkeley Heights, NJ); Friedman, Robert A. (Milford, NJ)

1983-11-22T23:59:59.000Z

403

Hybrid method of making an amorphous silicon P-I-N semiconductor device  

DOE Patents (OSTI)

The invention is directed to a hydrogenated amorphous silicon PIN semiconductor device of hybrid glow discharge/reactive sputtering fabrication. The hybrid fabrication method is of advantage in providing an ability to control the optical band gap of the P and N layers, resulting in increased photogeneration of charge carriers and device output.

Moustakas, Theodore D. (Berkeley Heights, NJ); Morel, Don L. (Woodland Hills, CA); Abeles, Benjamin (Princeton, NJ)

1983-10-04T23:59:59.000Z

404

Dopant type and/or concentration selective dry photochemical etching of semiconductor materials  

DOE Patents (OSTI)

A method of selectively photochemically dry etching a first semiconductor material of a given composition in the presence of a second semiconductor material which is of a composition different from said first material, said second material substantially not being etched during said method, comprises subjecting both materials to the same photon flux of an energy greater than their respective direct bandgaps and to the same gaseous chemical etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said conditions also being such that the resultant electronic structure of the first semiconductor material under said photon flux is sufficient for the first material to undergo substantial photochemical etching under said conditions and being such that the resultant electronic structure of the second semiconductor material under said photon flux is not sufficient for the second material to undergo substantial photochemical etching under said conditions. In a preferred mode, the materials are subjected to a bias voltage which suppresses etching in n- or p- type material but not in p- or n-type material, respectively; or suppresses etching in the more heavily doped of two n-type or two p-type materials.

Ashby, Carol I. H. (Edgewood, NM); Dishman, James L. (Albuquerque, NM)

1987-01-01T23:59:59.000Z

405

FY06 Annual Report: Amorphous Semiconductors for Gamma Radiation Detection (ASGRAD)  

SciTech Connect

We describe progress in the development of new materials for portable, room-temperature, gamma-radiation detection at Pacific Northwest National Laboratory at the Hanford Site in Washington State. High Z, high resistivity, amorphous semiconductors are being designed for use as solid-state detectors at near ambient temperatures; principles of operation are analogous to single-crystal semiconducting detectors. Amorphous semiconductors have both advantages and disadvantages compared to single crystals, and this project is developing methods to mitigate technical problems and design optimized material for gamma detection. Several issues involved in the fabrication of amorphous semiconductors are described, including reaction thermodynamics and kinetics, the development of pyrolytic coating, and the synthesis of ingots. The characterization of amorphous semiconductors is described, including sectioning and polishing protocols, optical microscopy, X-ray diffraction, scanning electron microscopy, optical spectroscopy, particle-induced X-ram emission, Rutherford backscattering, and electrical testing. Then collaboration with the University of Illinois at Urbana-Champaign is discussed in the areas of Hall-effect measurements and current voltage data. Finally, we discuss the strategy for continuing the program.

Johnson, Bradley R.; Riley, Brian J.; Crum, Jarrod V.; Sundaram, S. K.; Henager, Charles H.; Zhang, Yanwen; Shutthanandan, V.

2007-01-01T23:59:59.000Z

406

FY08 Annual Report: Amorphous Semiconductors for Gamma Radiation Detection (ASGRAD)  

SciTech Connect

This is the annual report for an old project funded by NA22. The purpose of the project was to develop amorphous semiconductors for use as radiation detectors. The annual report contains information about the progress made in synthesizing, characterizing, and radiation response testing of these new materials.

Johnson, Bradley R.; Riley, Brian J.; Crum, Jarrod V.; Ryan, Joseph V.; Sundaram, S. K.; McCloy, John S.; Rockett, Angus

2009-02-01T23:59:59.000Z

407

Not Your Grandma's Quilt Researchers develop technique to keep cool high-power semiconductor  

E-Print Network (OSTI)

devices used in wireless applications, traffic lights and electric cars By Sean Nealon On MAY 8, 2012 in everything from traffic lights to electric cars. Gallium Nitride (GaN), a semiconductor material found by the Nano-Device Laboratory research group led byAlexander Balandin, professor of electrical engineering

408

A simulated annealing approach with probability matrix for semiconductor dynamic scheduling problem  

Science Conference Proceedings (OSTI)

The dynamic scheduling problem of semiconductor burn-in operations is studied in this paper. The burn-in oven is a batch-processing machine and the size of each job is independent of the oven's capacity. The processing time for each batch is represented ... Keywords: Deadlines, Heuristic, Simulated annealing, Total weighted completion time

Fuh-Der Chou; Hui-Mei Wang; Pei-Chann Chang

2008-11-01T23:59:59.000Z

409

Application of quality function deployment in the semiconductor industry: A case study  

Science Conference Proceedings (OSTI)

In quality function deployment (QFD), the voice of the customer (VOC) is the critical factor in developing and producing a product that will meet or exceed customer requirements. This study integrates quality function deployment (QFD), management techniques ... Keywords: Customer satisfaction, Process management, Quality function deployment (QFD), Semiconductor industry, Voice of customer

Chee-Cheng Chen

2010-05-01T23:59:59.000Z

410

A multi-criteria approach for scheduling semiconductor wafer fabrication facilities  

Science Conference Proceedings (OSTI)

In this research, we model a semiconductor wafer fabrication process as a complex job shop, and adapt a Modified Shifting Bottleneck Heuristic (MSBH) to facilitate the multi-criteria optimization of makespan, cycle time, and total weighted tardiness ... Keywords: Complex job shop, Multicriteria, Shifting bottleneck

Michele E. Pfund; Hari Balasubramanian; John W. Fowler; Scott J. Mason; Oliver Rose

2008-02-01T23:59:59.000Z

411

SETEC/Semiconductor Manufacturing Technologies Program: 1999 Annual and Final Report  

Science Conference Proceedings (OSTI)

This report summarizes the results of work conducted by the Semiconductor Manufacturing Technologies Program at Sandia National Laboratories (Sandia) during 1999. This work was performed by one working group: the Semiconductor Equipment Technology Center (SETEC). The group's projects included Numerical/Experimental Characterization of the Growth of Single-Crystal Calcium Fluoride (CaF{sub 2}); The Use of High-Resolution Transmission Electron Microscopy (HRTEM) Imaging for Certifying Critical-Dimension Reference Materials Fabricated with Silicon Micromachining; Assembly Test Chip for Flip Chip on Board; Plasma Mechanism Validation: Modeling and Experimentation; and Model-Based Reduction of Contamination in Gate-Quality Nitride Reactor. During 1999, all projects focused on meeting customer needs in a timely manner and ensuring that projects were aligned with the goals of the National Technology Roadmap for Semiconductors sponsored by the Semiconductor Industry Association and with Sandia's defense mission. This report also provides a short history of the Sandia/SEMATECH relationship and a brief on all projects completed during the seven years of the program.

MCBRAYER,JOHN D.

2000-12-01T23:59:59.000Z

412

Defect gap states on III-V semiconductor-oxide interfaces (invited)  

Science Conference Proceedings (OSTI)

Interfaces models of (100)GaAs and various high K oxides such as HfO"2, Gd"2O"3 or Al"2O"3 are used to study the interfacial defects and mis-bonded sites which can introduce states into the semiconductor gap, and cause the Fermi level pinning observed ... Keywords: Calculation, FET, GaAs, Interface states, Oxide, Passivation

J. Robertson; L. Lin

2011-07-01T23:59:59.000Z

413

Molecular beam epitaxy passivation studies of Ge and III-V semiconductors for advanced CMOS  

Science Conference Proceedings (OSTI)

Future CMOS technologies will require the use of substrate material with a very high mobility in order to fulfil the performance requirements. Therefore, combination of Ge p-MOS with n-MOS devices made out of high mobility III/V compounds, such as GaAs, ... Keywords: High mobility semiconductors, Molecular beam epitaxy (MBE), Passivation

C. Merckling; J. Penaud; D. Kohen; F. Bellenger; A. Alian; G. Brammertz; M. El-Kazzi; M. Houssa; J. Dekoster; M. Caymax; M. Meuris; M. M. Heyns

2009-07-01T23:59:59.000Z

414

Photodeposition of Pt on Colloidal CdS and CdSe/CdS Semiconductor Nanostructures  

E-Print Network (OSTI)

on Colloidal CdS and CdSe/CdS Semiconductor Nanostructuresof Pt on colloidal CdS and CdSe/CdS core/shell nanocrystals.photoexcitation of CdS and CdSe/CdS in the presence of an

Dukovic, Gordana

2008-01-01T23:59:59.000Z

415

Semiconductor nanowire thermoelectric materials and devices, and processes for producing same  

DOE Patents (OSTI)

The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic longitudinal modulation, which may be a compositional modulation or a strain-induced modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."

Lagally, Max G. (Madison, WI); Evans, Paul G. (Madison, WI); Ritz, Clark S. (Middleton, WI)

2011-02-15T23:59:59.000Z

416

Semiconductor nanowire thermoelectric materials and devices, and processes for producing same  

DOE Patents (OSTI)

The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or "nanomembranes."

Lagally, Max G; Evans, Paul G; Ritz, Clark S

2013-09-17T23:59:59.000Z

417

Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth  

DOE Patents (OSTI)

Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

Fan, John C. C. (Chestnut Hill, MA); Tsaur, Bor-Yeu (Arlington, MA); Gale, Ronald P. (Bedford, MA); Davis, Frances M. (Framingham, MA)

1992-02-25T23:59:59.000Z

418

Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth  

DOE Patents (OSTI)

Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

Fan, John C. C. (Chestnut Hill, MA); Tsaur, Bor-Yeu (Arlington, MA); Gale, Ronald P. (Bedford, MA); Davis, Frances M. (Framingham, MA)

1986-12-30T23:59:59.000Z

419

Bottom-up superconducting and Josephson junction devices inside a Group-IV semiconductor  

E-Print Network (OSTI)

We propose superconducting devices made from precision hole-doped regions within a silicon (or germanium) single crystal. We analyze the properties of this superconducting semiconductor and show that practical superconducting wires, Josephson tunnel junctions or weak links, SQUIDs, and qubits are realizable. This work motivates the pursuit of bottom-up superconductivity for improved or fundamentally different technology and physics.

Yun-Pil Shim; Charles Tahan

2013-08-30T23:59:59.000Z

420

486 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 11, NO. 3, AUGUST 1998 Virtual Plasma Equipment Model  

E-Print Network (OSTI)

of Standards and Technology, the National Science Foundation (ECS 9404133), the Semiconductor Research development. The most common approach to feedback control of plasma processing reactors makes use- facturing of microelectronics devices [1]. Most of the plasma processing reactors now in the fabrication

Kushner, Mark

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing Integrated ESH Assessment  

E-Print Network (OSTI)

& Industrial Interactions Cu CVD process Continue analysis of ESH & Manufacturing metrics Improve model Semiconductor Manufacturing 2 Strategic Plan Time Line Reuse and Recycle Chemicals recycle and reuse Water recycle and reuse Abatement and Discharge Control Novel plasma reactor abatement Waste water treatment CMP

Rubloff, Gary W.

422

Increasing the Locality of Iterative Methods and Its Application to the Simulation of Semiconductor Devices  

Science Conference Proceedings (OSTI)

Irregular codes are present in many scientific applications, such as finite element simulations. In these simulations the solution of large sparse linear equation systems is required, which are often solved using iterative methods. The main kernel of ... Keywords: data locality, irregular codes, iterative methods, reordering techniques, semiconductor devices simulation

J.C. Pichel; D.B. Heras; J.C. Cabaleiro; A.J. Garca-Loureiro; F.F. Rivera

2010-05-01T23:59:59.000Z

423

The Technical and Economic Potential for Electricity Energy Efficiency in a Semiconductor Manufacturing Plant  

E-Print Network (OSTI)

In recent years, there has been renewed interest in energy efficiency in the semiconductor industry. The declining prices for semiconductor products has prompted semiconductor manufacturing plants to control costs so as to maintain profitability. This paper presents the potential for energy efficiency improvements at a semiconductor manufacturing plant from various energy efficiency measures such as high efficiency motors, adjustable speed drive motors, high efficiency HVAC, and high efficiency lighting. The effort was part of a utility-sponsored technical potential study. Although this paper describes energy efficiency options in a specific facility, the recommended actions have broad application. In this study, the results show that none of the group replacement with high efficiency motors, adjustable speed drive motors, and high efficiency lighting would yield paybacks of less than 3 years. However, the end-of-useful life replacement with high efficiency motors for abatement of exhaust and deionizing of water as well as high efficiency lighting would yield paybacks of less than 3 years. The installation of adjustable speed drive motors at the end of useful life would not yield average paybacks of less than 3 years. Although specific implementation plans to achieve the energy savings are not outlined in this paper, it is hoped that the results of this analysis will identify areas which merit further engineering and economic analyses.

Lee, A. H. W.; Golden, J. W.; Zarnikau, J. W.

1997-04-01T23:59:59.000Z

424

Porous Diblock Copolymer Thin Films in High-Performance Semiconductor Microelectronics  

Science Conference Proceedings (OSTI)

The engine fueling more than 40 years of performance improvements in semiconductor integrated circuits (ICs) has been industry's ability to pattern circuit elements at ever-higher resolution and with ever-greater precision. Steady advances in photolithography - the process wherein ultraviolet light chemically changes a photosensitive polymer resist material in order to create a latent image - have resulted in scaling of minimum printed feature sizes from tens of microns during the 1980s to sub-50 nanometer transistor gate lengths in today's state-of-the-art ICs. The history of semiconductor technology scaling as well as future technology requirements is documented in the International Technology Roadmap for Semiconductors (ITRS). The progression of the semiconductor industry to the realm of nanometer-scale sizes has brought enormous challenges to device and circuit fabrication, rendering performance improvements by conventional scaling alone increasingly difficult. Most often this discussion is couched in terms of field effect transistor (FET) feature sizes such as the gate length or gate oxide thickness, however these challenges extend to many other aspects of the IC, including interconnect dimensions and pitch, device packing density, power consumption, and heat dissipation. The ITRS Technology Roadmap forecasts a difficult set of scientific and engineering challenges with no presently-known solutions. The primary focus of this chapter is the research performed at IBM on diblock copolymer films composed of polystyrene (PS) and poly(methyl-methacrylate) (PMMA) (PS-b-PMMA) with total molecular weights M{sub n} in the range of {approx}60K (g/mol) and polydispersities (PD) of {approx}1.1. These materials self assemble to form patterns having feature sizes in the range of 15-20nm. PS-b-PMMA was selected as a self-assembling patterning material due to its compatibility with the semiconductor microelectronics manufacturing infrastructure, as well as the significant body of existing research on understanding its material properties.

Black, C.T.

2011-02-01T23:59:59.000Z

425

Reliability-yield allocation for semiconductor integrated circuits: modeling and optimization  

E-Print Network (OSTI)

This research develops yield and reliability models for fault-tolerant semiconductor integrated circuits and develops optimization algorithms that can be directly applied to these models. Since defects cause failures in microelectronics systems, accurate yield and reliability models considering these defects as well as optimization techniques determining efficient defect-tolerant schemes are essential in semiconductor manufacturing and nanomanufacturing to ensure manufacturability and productivity. The defect-based yield model considers various types of failures, fault-tolerant schemes such as hierarchical redundancy and error correcting code, and burn-in effects, simultaneously. The reliability model counts on carry-over single-cell failures accompanied by the failure rate of the semiconductor integrated circuits under the assumption of an error correcting code policy. The redundancy allocation problem, which seeks to ?nd an optimal allocation of redundancy that maximizes system reliability, is one of the representative problems in reliability optimization. The problem is typically formulated as a nonconvex integer nonlinear programming problem that is nonseparable and coherent. Two iterative heuristics, tree and scanning heuristics, and variants are studied to obtain local optima and a branch-and-bound algorithm is proposed to ?nd the global optimum for redundancy allocation problems. The proposed algorithms engage a multiple-search paths strategy to accelerate efficiency. Experimental results of these algorithms indicate that they are superior to the existing algorithms in terms of computation time and solution quality. An example of memory semiconductor integrated circuits is presented to show the applicability of both the yield and reliability models and the optimization algorithms to fault-tolerant semiconductor integrated circuits.

Ha, Chunghun

2004-08-01T23:59:59.000Z

426

LCD, low-temperature soldering and compound semiconductor : the sources, market, applications and future prospects of indium in Malaysia  

E-Print Network (OSTI)

Indium is a minor but very valuable metal. Decreasing supplies of indium from refining and increasing demands from LCD, low-temperature soldering and compound semiconductors have stimulated the indium price increase ...

Yong, Foo Nun

2006-01-01T23:59:59.000Z

427

Ion Torren Semiconductor Sequencing Allows Rapid, Low Cost Sequencing of the Human Exome ( 7th Annual SFAF Meeting, 2012)  

Science Conference Proceedings (OSTI)

David Jenkins on "Ion Torrent semiconductor sequencing allows rapid, low-cost sequencing of the human exome" at the 2012 Sequencing, Finishing, Analysis in the Future Meeting held June 5-7, 2012 in Santa Fe, New Mexico.

Jenkins, David [EdgeBio

2012-06-01T23:59:59.000Z

428

Solid-state semiconductors are better alternatives to arc-lamps for efficient and uniform illumination in minimal access surgery  

E-Print Network (OSTI)

of technical and ergonomic limitations. White light-emitting diodes (LEDs) are energy-efficient solid- state Illumination Á Light-emitting diode Á Minimal access surgery Á Solid-state semiconductor In the 1950s

Rosso, Lula

429

The synthesis of inorganic semiconductor nanocrystalline materials for the purpose of creating hybrid organic/inorganic light-emitting devices  

E-Print Network (OSTI)

Colloidal semiconductor nanocrystals (NCs) or quantum dots (QDs) can be synthesized to efficiently emit light from the ultraviolet, across the entire visible spectrum, and into the near infrared. This is now possible due ...

Steckel, Jonathan S. (Jonathan Stephen)

2006-01-01T23:59:59.000Z

430

Insights into formation of semiconductor nanocrystals : from first principles calculations to kinetic models of nucleation and growth  

E-Print Network (OSTI)

Over the past decade the synthesis of colloidal semiconductor nanocrystals of diverse shapes and sizes has sparked tremendous interest in both the industrial and scientific communities. Much of the work thus far has been ...

Rempel, Jane Yevgeniya

2008-01-01T23:59:59.000Z

431

High-power, Ultralow-noise Semiconductor External Cavity Lasers Based on Low-confinement Optical Waveguide Gain Media  

E-Print Network (OSTI)

For the past several years, we have been developing a new class of high-power, low-noise semiconductor optical gain medium based on the slab-coupled optical waveguide (SCOW) concept. The key characteristics of the SCOW ...

Juodawlkis, Paul W.

432

STATEMENT OF CONSIDERATIONS REQUEST BY VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ("VSEA")  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ("VSEA") VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ("VSEA") FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE 1\ WARD NO. DE-EE0004737; W(A) 2011-027 VSEA has requested a waiver of domestic and foreign patent rights of the United States of America in all subject inventions arising from its participation under the above referenced grant entitled "Reduced Cost and Manufacturing Complexity of High Efficiency IBC Solar Cells Using Ion Implantation and In Situ Patterning." The grant was awarded under the DE-FOA- 0000234 High Impact Supply Chain Research and Development for PV Technologies and Systems Funding Opportunity Announcement. VSEA is performing all the work under the grant without the use of any sub-awardees.

433

Is it the boundaries or disorder that dominates electron transport in semiconductor `billiards'?  

E-Print Network (OSTI)

Semiconductor billiards are often considered as ideal systems for studying dynamical chaos in the quantum mechanical limit. In the traditional picture, once the electron's mean free path, as determined by the mobility, becomes larger than the device, disorder is negligible and electron trajectories are shaped by specular reflection from the billiard walls alone. Experimental insight into the electron dynamics is normally obtained by magnetoconductance measurements. A number of recent experimental studies have shown these measurements to be largely independent of the billiards exact shape, and highly dependent on sample-to-sample variations in disorder. In this paper, we discuss these more recent findings within the full historical context of work on semiconductor billiards, and offer strong evidence that small-angle scattering at the sub-100 nm length-scale dominates transport in these devices, with important implications for the role these devices can play for experimental tests of ideas in quantum chaos.

Micolich, A P; Scannell, B C; Marlow, C A; Martin, T P; Pilgrim, I; Hamilton, A R; Linke, H; Taylor, R P

2012-01-01T23:59:59.000Z

434

Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

1998-10-14T23:59:59.000Z

435

Calculation of the electron structure of vacancies and their compensated states in III-VI semiconductors  

Science Conference Proceedings (OSTI)

The Green's functions theory and the bond-orbital model are used as a basis for calculations of the electron structure of local defects-specifically, vacancies and their compensated states in III-VI semiconductors. The energy levels in the band gap are established, and the changes induced in the electron densities in the GaS, GaSe, and InSe semiconductors by anion and cation vacancies and their compensated states are calculated. It is established that, if a vacancy is compensated by an atom of an element from the same subgroup with the same tetrahedral coordination and if the ionic radius of the compensating atom is smaller than that of the substituted atom, the local levels formed by the vacancy completely disappear. It is shown that this mechanism of compensation of vacancies provides a means not only for recovering the parameters of the crystal, but for improving the characteristics of the crystal as well.

Mehrabova, M. A., E-mail: Mehrabova@mail.ru; Madatov, R. S. [Azerbaijan National Academy of Sciences, Institute of Radiation Problems (Azerbaijan)

2011-08-15T23:59:59.000Z

436

Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching  

DOE Patents (OSTI)

A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission bean, of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.

Hohimer, J.P.

1992-12-31T23:59:59.000Z

437

Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching  

DOE Patents (OSTI)

A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure. 6 figs.

Hohimer, J.P.

1994-06-07T23:59:59.000Z

438

Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching  

DOE Patents (OSTI)

A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.

Hohimer, John P. (Albuquerque, NM)

1994-01-01T23:59:59.000Z

439

The importance of intra-molecular electron spin relaxation in small molecular semiconductors  

E-Print Network (OSTI)

Electron spin relaxation rate (eSR) is investigated on several organic semiconductors of different morphologies and molecular structures, using avoided level crossing muon spectroscopy as a local spin probe. We find that two functionalized acenes (polycrystalline tri(isopropyl)silyl-pentacene and amorphous 5,6,11,12-tetraphenyltetracene) exhibit eSRs with an Arrhenius-like temperature dependence, each with two characteristic energy scales similar to those expected from vibrations. Polycrystalline tris(8-hydroxyquinolate)gallium shows a similar behavior. The observed eSR for these molecules is no greater than 0.85 MHz at 300 K. The variety of crystal structures and transport regimes that these molecules possess, as well as the local nature of the probe, strongly suggest an intra-molecular phenomenon general to many organic semiconductors, contrasting the commonly assumed spin relaxation models based on inter-molecular charge carrier transport.

L. Schulz; M. Willis; L. Nuccio; P. Shusharov; S. Fratini; F. L. Pratt; W. P. Gillin; T. Kreouzis; M. Heeney; N. Stingelin; C. A. Stafford; D. J. Beesley; C. Bernhard; J. E. Anthony; I. Mckenzie; J. S. Lord; A. J. Drew

2010-06-14T23:59:59.000Z

440

Pulsed-Laser Deposition of Electronic Oxides: Superconductor and Semiconductor Applications  

Science Conference Proceedings (OSTI)

Over the past decade, pulsed-laser deposition (PLD) has proven to be one of the most versatile and effective methods for obtaining high-quality electronic oxide thin-film materials. Much of this success can be attributed to its initial use in depositing high temperature superconducting materials. However, pulsed-laser deposition is now a leading research tool in the development of various electronic oxide thin-film technologies, In this paper, recent progress in the deposition of oxide materials on dissimilar materials for both superconductor and semiconductor applications is discussed. Recent developments in the synthesis of superconducting wires via epitaxial growth of superconducting oxides on biaxially textured metal tapes is described. In addition, efforts to integrate high-k dielectric oxides on semiconductor surfaces using pulsed-laser deposition are highlighted.

Norton, D.P.; Park, C.; Lee, Y.E.; Budai, J.D.; Chisholm, M.F.; Verebelyi, D.T.; Christen, D.K.; Kroeger, D.M.

2000-01-24T23:59:59.000Z

Note: This page contains sample records for the topic "osram opto semiconductors" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Hybrid Solar Cells with Prescribed Nanoscale Morphologies Based onHyperbranched Semiconductor Nanocrystals  

SciTech Connect

In recent years, the search to develop large-area solar cells at low cost has led to research on photovoltaic (PV) systems based on nanocomposites containing conjugated polymers. These composite films can be synthesized and processed at lower costs and with greater versatility than the solid state inorganic semiconductors that comprise today's solar cells. However, the best nanocomposite solar cells are based on a complex architecture, consisting of a fine blend of interpenetrating and percolating donor and acceptor materials. Cell performance is strongly dependent on blend morphology, and solution-based fabrication techniques often result in uncontrolled and irreproducible blends, whose composite morphologies are difficult to characterize accurately. Here we incorporate 3-dimensional hyper-branched colloidal semiconductor nanocrystals in solution-processed hybrid organic-inorganic solar cells, yielding reproducible and controlled nanoscale morphology.

Gur, Ilan; Fromer, Neil A.; Chen, Chih-Ping; Kanaras, AntoniosG.; Alivisatos, A. Paul

2006-09-09T23:59:59.000Z

442

Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material  

DOE Patents (OSTI)

A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.

McKee, Rodney Allen (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

2000-01-01T23:59:59.000Z

443

Failure modes of beam lead semiconductors in thin film hybrid microcircuits  

SciTech Connect

Beam lead semiconductor and passive devices have recently been utilized in hybrid microcircuits to provide higher reliability. This is derived from the beam lead device's improved bonding integrity plus the silicon nitride coating which reduces sensitivity to contaminants; however, their size requires special handling techniques to prevent handling damage. Other failure modes exist, such as cracked nitride, pinholes in the nitride, inadequate plating, and smeared metalization. After two years of production usage totaling approximately 150,000 devices, The Bendix Corporation's Kansas City Division has compiled significant data on beam lead devices including small signal, and power, discrete semiconductors and digital integrated circuits. These failure modes are characterized, and precautionary measures are described to minimize failures in HMC usage.

Swafford, J.H.

1975-01-01T23:59:59.000Z

444

Catalyzed Water Oxidation by Solar Irradiation of Band-Gap-Narrowed Semiconductors (Part 2. Overview).  

DOE Green Energy (OSTI)

The objectives of this report are: (1) Investigate the catalysis of water oxidation by cobalt and manganese hydrous oxides immobilized on titania or silica nanoparticles, and dinuclear metal complexes with quinonoid ligands in order to develop a better understanding of the critical water oxidation chemistry, and rationally search for improved catalysts. (2) Optimize the light-harvesting and charge-separation abilities of stable semiconductors including both a focused effort to improve the best existing materials by investigating their structural and electronic properties using a full suite of characterization tools, and a parallel effort to discover and characterize new materials. (3) Combine these elements to examine the function of oxidation catalysts on Band-Gap-Narrowed Semiconductor (BGNSC) surfaces and elucidate the core scientific challenges to the efficient coupling of the materials functions.

Fujita,E.; Khalifah, P.; Lymar, S.; Muckerman, J.T.; Rodriguez, J.

2008-03-18T23:59:59.000Z

445

Catalyzed Water Oxidation by Solar Irradiation of Band-Gap-Narrowed Semiconductors (Part 1. Overview).  

DOE Green Energy (OSTI)

The objectives of this report are: (1) Investigate the catalysis of water oxidation by cobalt and manganese hydrous oxides immobilized on titania or silica nanoparticles, and dinuclear metal complexes with quinonoid ligands in order to develop a better understanding of the critical water oxidation chemistry, and rationally search for improved catalysts. (2) Optimize the light-harvesting and charge-separation abilities of stable semiconductors including both a focused effort to improve the best existing materials by investigating their structural and electronic properties using a full suite of characterization tools, and a parallel effort to discover and characterize new materials. (3) Combine these elements to examine the function of oxidation catalysts on Band-Gap-Narrowed Semiconductor (BGNSC) surfaces and elucidate the core scientific challenges to the efficient coupling of the materials functions.

Fujita,E.; Khalifah, P.; Lymar, S.; Muckerman, J.T.; Rodgriguez, J.

2008-03-18T23:59:59.000Z

446

Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes  

E-Print Network (OSTI)

We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

Cornelius S. Bausch; Aune Koitme; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

2013-05-06T23:59:59.000Z

447

Response function and optimum configuration of semiconductor backscattered-electron detectors for scanning electron microscopes  

Science Conference Proceedings (OSTI)

A new highly efficient design for semiconductor detectors of intermediate-energy electrons (1-50 keV) for application in scanning electron microscopes is proposed. Calculations of the response function of advanced detectors and control experiments show that the efficiency of the developed devices increases on average twofold, which is a significant positive factor in the operation of modern electron microscopes in the mode of low currents and at low primary electron energies.

Rau, E. I. [Moscow State University (Russian Federation); Orlikovskiy, N. A. [Russian Academy of Sciences, Physical Technological Institute (Russian Federation); Ivanova, E. S. [Moscow State University (Russian Federation)

2012-06-15T23:59:59.000Z

448

Heterogeneous reaction mechanisms and kinetics relevant to the CVD of semiconductor materials  

DOE Green Energy (OSTI)

This report documents the state of the art in experimental and theoretical techniques for determining reaction mechanisms and chemical kinetics of heterogeneous reactions relevant to the chemical vapor deposition of semiconductor materials. It summarizes the most common ultra-high vacuum experimental techniques that are used and the types of rate information available from each. Several case studies of specific chemical systems relevant to the microelectronics industry are described. Theoretical methods for calculating heterogeneous reaction rate constants are also summarized.

Creighton, J.R.; Coltrin, M.E.

1994-03-01T23:59:59.000Z

449

Radiation detection system using semiconductor detector with differential carrier trapping and mobility  

DOE Patents (OSTI)

A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI.sub.2, which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

Whited, Richard C. (Santa Barbara, CA)

1981-01-01T23:59:59.000Z

450

{100} or 45.degree.-rotated {100}, semiconductor-based, large-area, flexible, electronic devices  

Science Conference Proceedings (OSTI)

Novel articles and methods to fabricate the same resulting in flexible, {100} or 45.degree.-rotated {100} oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Goyal, Amit (Knoxville, TN)

2012-05-15T23:59:59.000Z

451

Probing semiconductor quantum dot state and manipulation with superconducting transmission line resonator  

E-Print Network (OSTI)

A coupled system of a superconducting transmission line resonator with a semiconductor double quantum dot is analyzed. We simulate the phase shift of the microwave signal in the resonator, which is sensitive to the quantum dot qubit state and manipulation. The measurement quality is sufficiently high and the results demonstrate a solid-state quantum processor based on this type of circuit can be envisioned.

Zhe Guan

2013-12-08T23:59:59.000Z

452

Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices  

DOE Patents (OSTI)

An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

Alivisatos, A. Paul (Oakland, CA); Colvin, Vickie (Springfield, NJ)

1996-01-01T23:59:59.000Z

453

Analysis of silicon carbide based semiconductor power devices and their application in power factor correction  

E-Print Network (OSTI)

Recent technological advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a stage that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. Material technologies superior to Si are needed for future power device developments. Silicon Carbide (SiC) based semiconductor devices offer one such alternative. SiC based power devices exhibit superior properties such as very low switching losses, fast switching behavior, improved reliability and high temperature operation capabilities. Power factor correction stage of power supplies is identified as an area where application of these devices would prove advantageous. In this thesis a high performance, high efficiency, SiC based power factor correction stage is discussed. The proposed topology takes advantage of the superior properties of SiC semiconductor based devices and the reduced number of devices that the dual boost power factor correction topology requires to achieve high efficiency, small size and better performance at high temperature. In addition to this analysis of SiC based power devices is carried out to study their characteristics and performance.

Durrani, Yamin Qaisar

2005-08-01T23:59:59.000Z

454

Absorptivity of semiconductors used in the production of solar cell panels  

SciTech Connect

The dependence of the absorptivity of semiconductors on the thickness of the absorbing layer is studied for crystalline silicon (c-Si), amorphous silicon (a-Si), cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS), and copper gallium diselenide (CuGaSe{sub 2}, CGS). The calculations are performed with consideration for the spectral distribution of AM1.5 standard solar radiation and the absorption coefficients of the materials. It is shown that, in the region of wavelengths {lambda} = {lambda}{sub g} = hc/E{sub g}, almost total absorption of the photons in AM1.5 solar radiation is attained in c-Si at the thickness d = 7-8 mm, in a-Si at d = 30-60 {mu}m, in CdTe at d = 20-30 {mu}m, and in CIS and CGS at d = 3-4 {mu}m. The results differ from previously reported data for these materials (especially for c-Si). In previous publications, the thickness needed for the semiconductor to absorb solar radiation completely was identified with the effective light penetration depth at a certain wavelength in the region of fundamental absorption for the semiconductor.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Grushko, E. V.; Mikityuk, T. I. [Chernivtsy National University (Ukraine)

2012-04-15T23:59:59.000Z

455

Band-gap measurements of direct and indirect semiconductors using monochromated electrons  

Science Conference Proceedings (OSTI)

With the development of monochromators for transmission electron microscopes, valence electron-energy-loss spectroscopy (VEELS) has become a powerful technique to study the band structure of materials with high spatial resolution. However, artifacts such as Cerenkov radiation pose a limit for interpretation of the low-loss spectra. In order to reveal the exact band-gap onset using the VEELS method, semiconductors with direct and indirect band-gap transitions have to be treated differently. For direct semiconductors, spectra acquired at thin regions can efficiently minimize the Cerenkov effects. Examples of hexagonal GaN (h-GaN) spectra acquired at different thickness showed that a correct band-gap onset value can be obtained for sample thicknesses up to 0.5 t/{lambda}. In addition, {omega}-q maps acquired at different specimen thicknesses confirm the thickness dependency of Cerenkov losses. For indirect semiconductors, the correct band-gap onset can be obtained in the dark-field mode when the required momentum transfer for indirect transition is satisfied. Dark-field VEEL spectroscopy using a star-shaped entrance aperture provides a way of removing Cerenkov effects in diffraction mode. Examples of Si spectra acquired by displacing the objective aperture revealed the exact indirect transition gap E{sub g} of 1.1 eV.

Gu Lin; Srot, Vesna; Sigle, Wilfried; Koch, Christoph; Aken, Peter van; Ruehle, Manfred [Max-Planck Institute for Metals Research, Heisenbergstrasse 3, D-70569 Stuttgart (Germany); Scholz, Ferdinand; Thapa, Sarad B.; Kirchner, Christoph [Institute of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, D-89069 Ulm (Germany); Jetter, Michael [Institut fuer Strahlenphysik, University of Stuttgart, D-70569 Stuttgart (Germany)

2007-05-15T23:59:59.000Z

456

Method for reducing or eliminating interface defects in mismatched semiconductor epilayers  

DOE Patents (OSTI)

The present invention and process relates to crystal lattice mismatched semiconductor composite having a first semiconductor layer and a second semiconductor growth layer deposited thereon to form an interface wherein the growth layer can be deposited at thicknesses in excess of the critical thickness, even up to about 10.times. critical thickness. Such composite has an interface which is substantially free of interface defects. For example, the size of the growth areas in a mismatched In.sub.0.05 Ga.sub.0.95 As/(001)GaAs interface was controlled by fabricating 2-.mu.m high pillars of various lateral geometries and lateral dimensions before the epitaxial deposition of 3500.ANG. of In.sub.0.05 Ga.sub.0.95 As. The linear dislocation density at the interface was reduced from >5000 dislocations/cm to about zero for 25-.mu.m lateral dimensions and to less than 800 dislocations/cm for lateral dimensions as large as 100 .mu.m. The fabricated pillars control the lateral dimensions of the growth layer and block the glide of misfit dislocations with the resultant decrease in dislocation density.

Fitzgerald, Jr., Eugene A. (Ithaca, NY); Ast, Dieter G. (Ithaca, NY)

1992-01-01T23:59:59.000Z

457

Method for reducing or eliminating interface defects in mismatched semiconductor eiplayers  

DOE Patents (OSTI)

The present invention and process relates to crystal lattice mismatched semiconductor composite having a first semiconductor layer and a second semiconductor growth layer deposited thereon to form an interface wherein the growth layer can be deposited at thicknesses in excess of the critical thickness, even up to about 10x critical thickness. Such composite has an interface which is substantially free of interface defects. For example, the size of the growth areas in a mismatched In.sub.0.05 Ga.sub.0.95 As/(001)GaAs interface was controlled by fabricating 2-.mu.m high pillars of various lateral geometries and lateral dimensions before the epitaxial deposition of 3500.ANG. of In.sub.0.05 Ga.sub.0.95 As. The linear dislocation density at the interface was reduced from >5000 dislocations/cm to about zero for 25-.mu.m lateral dimensions and to less than 800 dislocations/cm for lateral dimensions as large as 100 .mu.m. The fabricated pillars control the lateral dimensions of the growth layer and block the glide of misfit dislocations with the resultant decrease in dislocation density.

Fitzgerald, Jr., Eugene A. (Ithaca, NY); Ast, Dieter G. (Ithaca, NY)

1991-01-01T23:59:59.000Z

458

Small-angle x-ray scattering studies of microvoids in amorphous silicon-based semiconductors. Annual subcontract report, 1 February 1992--31 January 1993  

DOE Green Energy (OSTI)

This report describes work to provide now details of the microstructure for the size scale from about 1 nm to 30 nm in high-quality a-Si:H and related alloys prepared by current state-of-the-art deposition methods as well as by now and emerging deposition technologies to help determine the role of microvoids and other density fluctuations in controlling the opto-electronic properties. The objectives are to determine whether the presence of microstructure as detected by small-angle X-ray scattering (SAXS) (1) limits the photovoltaic (PV) properties of device-quality a-Si:H; (2) plays a role in determine the photostability of a-Si:H; and (3) is responsible for degradation of the PV properties due to alloying with Ge, C, and other constituents. We collaborated with several groups that can supply relevant systematic sets of samples and the associated opto-electronic data to help address these issues. The project also included developing a method to standardize the procedures, minimize substrate influences, and implement improved data reduction and modeling methodology.

Williamson, D.L.; Jones, S.J.; Chen, Y. [Colorado School of Mines, Golden, CO (United States)

1994-06-01T23:59:59.000Z

459

LBL-37525 UC-404 Surface Recombination in Semiconductors J.M. Langer* and W. Walukiewicz**  

Office of Scientific and Technical Information (OSTI)

37525 37525 UC-404 Surface Recombination in Semiconductors J.M. Langer* and W. Walukiewicz** "Institute of Physics Polish Academy of Sciences Al. Lotnikow 32/46 02668 Warsaw, Poland **Center for Advanced Materials Materials Sciences Division Lawrence Berkeley National Laboratory University of California Berkeley, California 94720 July 1995 DISCLAIMER This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, make any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that

460

Enhancement of photon intensity in forced coupled quantum wells inside a semiconductor microcavity  

E-Print Network (OSTI)

We study numerically the photon emission from a semiconductor microcavity containing $N\\ge 2$ quantum wells under the influence of a periodic external forcing. The emission is determined by the interplay between external forcing and internal interaction between the wells. While the external forcing synchronizes the periodic motion, the internal interaction destroys it. The nonlinear term of the Hamiltonian supports the synchronization. The numerical results show a jump of the photon intensity to very large values at a certain critical value of the external forcing when the number of quantum wells is not too large. We discuss the dynamics of the system across this transition.

Hichem Eleuch; Awadhesh Prasad; Ingrid Rotter

2013-02-16T23:59:59.000Z

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461

Negative capacitance in organic semiconductor devices: bipolar injection and charge recombination mechanism  

E-Print Network (OSTI)

We report negative capacitance at low frequencies in organic semiconductor based diodes and show that it appears only under bipolar injection conditions. We account quantitatively for this phenomenon by the recombination current due to electron-hole annihilation. Simple addition of the recombination current to the well established model of space charge limited current in the presence of traps, yields excellent fits to the experimentally measured admittance data. The dependence of the extracted characteristic recombination time on the bias voltage is indicative of a recombination process which is mediated by localized traps.

Ehrenfreund, E; Dennler, G; Neugebauer, H; Sariciftci, N S

2007-01-01T23:59:59.000Z

462

Hydrogenated Bilayer Wurtzite SiC Nanofilms: A Two-Dimensional Bipolar Magnetic Semiconductor Material  

E-Print Network (OSTI)

Recently, a new kind of spintronics materials, bipolar magnetic semiconductor (BMS), has been proposed. The spin polarization of BMS can be conveniently controlled by a gate voltage, which makes it very attractive in device engineering. Now, the main challenge is finding more BMS materials. In this article, we propose that hydrogenated wurtzite SiC nanofilm is a two-dimensional BMS material. Its BMS character is very robust under the effect of strain, substrate, or even a strong electric field. The proposed two-dimensional BMS material paves the way to use this promising new material in an integrated circuit.

Yuan, Long; Yang, Jinlong

2012-01-01T23:59:59.000Z

463

Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures  

DOE Patents (OSTI)

A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

Seager, C.H.; Evans, J.T. Jr.

1998-11-24T23:59:59.000Z

464

Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures  

DOE Patents (OSTI)

A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

Seager, Carleton H. (1304 Onava Ct., NE., Albuquerque, NM 87112); Evans, Jr., Joseph Tate (13609 Verbena Pl., NE., Albuquerque, NM 87112)

1998-01-01T23:59:59.000Z

465

Photoinduced charge transfer between fullerenes and TiO{sub 2} semiconductor colloids  

Science Conference Proceedings (OSTI)

A photocatalytic method has been presented to carry out one-electron reduction of C{sub 60} and C{sub 70} in 50/50 (v/v) benzene/ethanol. The fullerene reduction was carried out in colloidal TiO{sub 2} suspension using UV excitation. The charge transfer between the excited TiO{sub 2} semiconductor colloid and fullerene molecule occurs with a quantum efficiency of 13% for C{sub 70} and 24% for C{sub 60}. Laser flash photolysis measurements have been carried out to elucidate the mechanism of photocatalytic reduction.

Kamat, P.V. [Univ. of Notre Dame, IN (United States). Radiation Lab.; Bedja, I.; Hotchandani, S. [Universite du Quebec a Trois Rivieres (Canada). Centre de Recherche en Photobiophysique

1994-10-01T23:59:59.000Z

466

Apparatus and method for measuring the thickness of a semiconductor wafer  

DOE Patents (OSTI)

Apparatus for measuring thicknesses of semiconductor wafers, comprising: housing means for supporting a wafer in a light-tight environment; a light source mounted to the housing at one side of the wafer to emit light of a predetermined wavelength to normally impinge the wafer; a light detector supported at a predetermined distance from a side of the wafer opposite the side on which a light source impinges and adapted to receive light transmitted through the wafer; and means for measuring the transmitted light.

Ciszek, Theodoer F. (31843 Miwok Trail, P.O. Box 1453, Evergreen, CO 80439)

1995-01-01T23:59:59.000Z

467

Study of optical parameters of the Se-As chalcogenide semiconductor system containing EuF{sub 3} impurities  

Science Conference Proceedings (OSTI)

Optical properties of chalcogenide vitreous semiconductors of composition Se{sub 95}As{sub 5} containing different amounts of rare-earth metal fluorides (EuF{sub 3}) are studied, and, on this basis, the fundamental parameters, such as the refractive index and extinction coefficient, are determined. The dependences of these parameters on the content of EuF{sub 3} molecules are nonmonotonic: the low content (below 0.25 at %) aids in decreasing the parameters, whereas the high content tends to increase them. From the analysis of the results with consideration for the structural features of chalcogenide vitreous semiconductors of the Se{sub 95}As{sub 5} system (the presence of ordered high-coordinated microregions separated from each other by regions with a lower atomic density), it is concluded that the optical properties of the chalcogenide vitreous semiconductor system under study can be described in the context of Penn's model.

Isayev, A. I.; Mekhtiyeva, S. I.; Garibova, S. N., E-mail: sgaribova@rambler.ru; Alekperov, R. I.; Zeynalov, V. Z. [Azerbaijan National Academy of Sciences, Abdullaev Institute of Physics (Azerbaijan)

2011-08-15T23:59:59.000Z