Sample records for organic semiconductor wide

  1. Wide-Bandgap Semiconductors

    SciTech Connect (OSTI)

    Chinthavali, M.S.

    2005-11-22T23:59:59.000Z

    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters. With the advent of the use of SiC devices it is imperative that models of these be made available in commercial simulators. This enables power electronic designers to simulate their designs for various test conditions prior to fabrication. To build an accurate transistor-level model of a power electronic system such as an inverter, the first step is to characterize the semiconductor devices that are present in the system. Suitable test beds need to be built for each device to precisely test the devices and obtain relevant data that can be used for modeling. This includes careful characterization of the parasitic elements so as to emulate the test setup as closely as possible in simulations. This report is arranged as follows: Chapter 2--The testing and characterization of several diodes and power switches is presented. Chapter 3--A 55-kW hybrid inverter (Si insulated gate bipolar transistor--SiC Schottky diodes) device models and test results are presented. A detailed description of the various test setups followed by the parameter extraction, modeling, and simulation study of the inverter performance is presented. Chapter 4--A 7.5-kW all-SiC inverter (SiC junction field effect transistors (JFET)--SiC Schottky diodes) was built and tested. The models built in Saber were validated using the test data and the models were used in system applications in the Saber simulator. The simulation results and a comparison of the data from the prototype tests are discussed in this chapter. Chapter 5--The duration test results of devices utilized in buck converters undergoing reliability testing are presented.

  2. Opportunities for Wide Bandgap Semiconductor Power Electronics...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen...

  3. Wide band gap semiconductor templates

    DOE Patents [OSTI]

    Arendt, Paul N. (Los Alamos, NM); Stan, Liliana (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM); DePaula, Raymond F. (Santa Fe, NM); Usov, Igor O. (Los Alamos, NM)

    2010-12-14T23:59:59.000Z

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  4. Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronic...

    Broader source: Energy.gov (indexed) [DOE]

    Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics...

  5. Theory of Organic Magnetoresistance in Disordered Organic Semiconductors

    E-Print Network [OSTI]

    Flatte, Michael E.

    Theory of Organic Magnetoresistance in Disordered Organic Semiconductors Nicholas J. Harmon semiconductors, disordered semiconductors, organic magnetoresistance, percolation theory, spin transport organic semiconductors. The theory proposed here maps the complex phenomena of spin-dependent hopping onto

  6. Sandia National Laboratories: wide-bandgap semiconductor

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    electroluminescence was first reported by H.J. Round in 1907, and the first light-emitting diode (LED) was reported by O.V. Losev in 1927. Not until the birth of semiconductor...

  7. Charge-carrier transport in amorphous organic semiconductors

    E-Print Network [OSTI]

    Limketkai, Benjie, 1982-

    2008-01-01T23:59:59.000Z

    Since the first reports of efficient luminescence and absorption in organic semiconductors, organic light-emitting devices (OLEDs) and photovoltaics (OPVs) have attracted increasing interest. Organic semiconductors have ...

  8. Comparison of Wide-Bandgap Semiconductors for Power Electronics Applications

    SciTech Connect (OSTI)

    Ozpineci, B.

    2004-01-02T23:59:59.000Z

    Recent developmental advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations, new semiconductor materials for power device applications are needed. For high power requirements, wide-bandgap semiconductors like silicon carbide (SiC), gallium nitride (GaN), and diamond, with their superior electrical properties, are likely candidates to replace Si in the near future. This report compares wide-bandgap semiconductors with respect to their promise and applicability for power applications and predicts the future of power device semiconductor materials.

  9. Spin injection and manipulation in organic semiconductors

    E-Print Network [OSTI]

    Venkataraman, Karthik (Karthik Raman)

    2011-01-01T23:59:59.000Z

    The use of organic semiconductors to enable organic spintronic devices requires the understanding of transport and control of the spin state of the carriers. This thesis deals with the above issue, focusing on the interface ...

  10. Wide Bandgap Semiconductors: Pursuing the Promise

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradley NickellApril 16, 2008 TBD-0075 -In theWide Bandgap

  11. Wide Bandgap Semiconductors | Department of Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron SpinPrincetonUsingWhat is a “Shut-down”Whole AlgaeRateWhy IsWhyWhyWide

  12. Electroluminescence in ion gel gated organic polymer semiconductor transistors

    E-Print Network [OSTI]

    Bhat, Shrivalli

    2011-07-12T23:59:59.000Z

    This thesis reports the light emission in ion gel gated, thin film organic semiconductor transistors and investigates the light emission mechanism behind these devices. We report that ion gel gated organic polymer semiconductor transistors emit...

  13. Method of doping organic semiconductors

    DOE Patents [OSTI]

    Kloc,; Christian Leo (Constance, DE); Ramirez; Arthur Penn (Summit, NJ); So, Woo-Young (New Providence, NJ)

    2010-10-26T23:59:59.000Z

    An apparatus has a crystalline organic semiconducting region that includes polyaromatic molecules. A source electrode and a drain electrode of a field-effect transistor are both in contact with the crystalline organic semiconducting region. A gate electrode of the field-effect transistor is located to affect the conductivity of the crystalline organic semiconducting region between the source and drain electrodes. A dielectric layer of a first dielectric that is substantially impermeable to oxygen is in contact with the crystalline organic semiconducting region. The crystalline organic semiconducting region is located between the dielectric layer and a substrate. The gate electrode is located on the dielectric layer. A portion of the crystalline organic semiconducting region is in contact with a second dielectric via an opening in the dielectric layer. A physical interface is located between the second dielectric and the first dielectric.

  14. Seebeck coefficient in organic semiconductors

    E-Print Network [OSTI]

    Venkateshvaran, Deepak

    2014-07-01T23:59:59.000Z

    of this PhD thesis lie in building cost-effective and environmentally friendly waste-heat to useful energy converters based on organic polymers. The efficiency of heat to energy conversion by organic polymers tends to be higher than that for conventional...

  15. Method of doping organic semiconductors

    DOE Patents [OSTI]

    Kloc, Christian Leo (Constance, DE); Ramirez, Arthur Penn (Summit, NJ); So, Woo-Young (New Providence, NJ)

    2012-02-28T23:59:59.000Z

    A method includes the steps of forming a contiguous semiconducting region and heating the region. The semiconducting region includes polyaromatic molecules. The heating raises the semiconducting region to a temperature above room temperature. The heating is performed in the presence of a dopant gas and the absence of light to form a doped organic semiconducting region.

  16. High-Throughput Transfer Imprinting for Organic Semiconductors

    E-Print Network [OSTI]

    Choo, Gihoon

    2013-08-06T23:59:59.000Z

    semiconductors because heat and pressure used in thermal nanoimprint do not damage functional materials. However, issues such as residual layer removal and mold contamination still limit the application of nanoimprint for organic semiconductor patterning...

  17. Conduction properties of metal/organic monolayer/semiconductor heterostructures

    SciTech Connect (OSTI)

    Li, D.; Bishop, A.; Gim, Y.; Shi, X.B.; Fitzsimmons, M.R.; Jia, Q.X. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    1998-11-01T23:59:59.000Z

    We have fabricated and characterized rectifying devices made of metal/organic monolayer/semiconductor heterostructures. The devices consist of an organic barrier layer sandwiched between an aluminum (Al) metal contact and a {ital p}-type Si semiconductor. The barrier materials were chosen from three types of self-assembled monolayers (SAMs) with different electronic properties: (1) wide-band gap poly(diallydimethyl ammonium) chloride (PDDA), (2) narrow-band gap PDDA/NiPc (nickel phthalocyanine tetrasulfonate), and (3) donor type PDDA/PPP (poly {ital p}-quaterphenylene-disulfonic-dicarboxylic acid). From current{endash}voltage (I{endash}V) measurements at room temperature, we have found the turn-on voltage of the devices can be tuned by varying the structure, hence electronic properties, of the organic monolayers, and that there exists a power-law dependence of {ital I} on V, I{proportional_to}V{sup {alpha}}, with the exponent {alpha}=2.2 for PDDA, 2.7 for PDDA/NiPc, and 1.44 for PDDA/PPP as the barrier layer, respectively. Our results imply that the transport properties are controlled by both the electronic properties of the SAMs and those of the metal and semiconductor, as indicated by the power-law dependence of the I{endash}V characteristics. {copyright} {ital 1998 American Institute of Physics.}

  18. Exploring Electron Transfer in Organic Semiconductors | MIT-Harvard...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electron Transfer in Organic Semiconductors January 28, 2009 at 3pm36-428 Troy Van Voorhis Department of Chemistry, Massachusetts Institute of Technology vanvoorhis2000 abstract:...

  19. Room temperature triplet state spectroscopy of organic semiconductors

    E-Print Network [OSTI]

    Reineke, Sebastian

    2013-01-01T23:59:59.000Z

    Organic light emitting devices and solar cells are machines that create, manipulate and destroy excited states in organic semiconductors. It is crucial to characterize these excited states, or excitons, to optimize device performance in applications like displays and solar energy harvesting. This is complicated if the excited state is a triplet because the electronic transition is dark with a vanishing oscillator strength. As a consequence, triplet state spectroscopy must usually be performed at cryogenic temperatures to reduce competition from non-radiative rates. Here, we control non-radiative rates by engineering a solid-state host matrix containing the target molecule, allowing the observation of phosphorescence at room temperature and alleviating constraints of cryogenic experiments. We test these techniques on a wide range of materials with functionalities spanning multi-exciton generation (singlet exciton fission), organic light emitting device host materials, and thermally activated delayed fluorescen...

  20. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

    DOE Patents [OSTI]

    Hui, Rongqing (Lenexa, KS); Jiang,Hong-Xing (Manhattan, KS); Lin, Jing-Yu (Manhattan, KS)

    2008-03-18T23:59:59.000Z

    The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

  1. High-Throughput Transfer Imprinting for Organic Semiconductors

    E-Print Network [OSTI]

    Choo, Gihoon

    2013-08-06T23:59:59.000Z

    . In this work, nanoimprint-based transfer imprinting of organic semiconductor is studied. In the same time the suggested technique is simulated with COMSOL multi-physics simulator to understand its mechanism. This transfer printing technique utilize thermal...

  2. Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications

    Broader source: Energy.gov [DOE]

    The Energy Department will present a live webinar titled "Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications" on Tuesday, October 21, at 12:00 p...

  3. Webinar: Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications

    Broader source: Energy.gov [DOE]

    Recording and text version of the Fuel Cell Technologies Office webinar titled "Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications," originally presented on October 21, 2014.

  4. Organic conductive films for semiconductor electrodes

    DOE Patents [OSTI]

    Frank, A.J.

    1984-01-01T23:59:59.000Z

    According to the present invention, improved electrodes overcoated with conductive polymer films and preselected catalysts are provided. The electrodes typically comprise an inorganic semiconductor over-coated with a charge conductive polymer film comprising a charge conductive polymer in or on which is a catalyst or charge-relaying agent.

  5. Synthetic Control of Organic Semiconductor Excited States

    E-Print Network [OSTI]

    Clem, Tabitha Ann

    2010-01-01T23:59:59.000Z

    Molecules for Organic Photovoltaics Abstract The synthesis,with a particular focus on photovoltaics. The first chapterfor Organic Photovoltaics Chapter 3: Cyclometalated Platinum

  6. Photocell utilizing a wide-bandgap semiconductor material

    DOE Patents [OSTI]

    Carlson, David E. (Yardley, PA); Williams, Brown F. (Princeton, NJ)

    1984-06-05T23:59:59.000Z

    A photocell comprises a p-i-n amorphous silicon structure having a wide bandgap layer adjacent to either the p-type or n-type layer. This structure reduces the absorption of light entering the photocell and the back-diffusion of minority carriers.

  7. Sandia Energy - Sandia Wide-Bandgap Semiconductor Workshop

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del Sol Home Distribution GridDocuments HomeDatabase on EngineATeachesWide-Bandgap

  8. Photocatalytic Oxidation of Aqueous Organic Contaminants by Semiconductors using Visible Light Radiation

    E-Print Network [OSTI]

    Meyers, Steven D.

    Photocatalytic Oxidation of Aqueous Organic Contaminants by Semiconductors using Visible Light semiconductor, InVO4, mechanically alloyed to TiO2, to shift photo-initiation into the visible range. 3, the ratio of semiconductors had no significant impact on the reaction rate. Long term goal - develop

  9. Wide-bandgap semiconductors for high power, high frequency and high temperature. Materials Research Society symposium proceedings Volume 512

    SciTech Connect (OSTI)

    DenBaars, S.; Palmour, J.; Shur, M.; Spencer, M. [eds.

    1997-07-01T23:59:59.000Z

    Wide-bandgap semiconductors have a long and illustrious history, starting with the first paper on SiC light-emitting diodes published in 1907. In the last few years, however, interest in wide-bandgap semiconductors has skyrocketed. Improved material quality, important breakthroughs both in SiC and GaN technologies, and the emergence of blue GaN-based lasers, have stimulated this progress. To provide a fairly complete and up-to-date picture of this important field, most of the work presented at the conference is included in the volume. In addition, invited papers present an excellent overview of the current state of the art and offer projections for future developments. Topics include: GaN materials and devices; crystal growth; SiC materials and devices; characterization of wide-bandgap semiconductors; and processing characterization and properties of wide-bandgap materials.

  10. Electrical bistability and spin valve effect in a ferromagnet/organic semiconductor/ferromagnet heterojunction

    E-Print Network [OSTI]

    Eom, Chang Beom

    Letter Electrical bistability and spin valve effect in a ferromagnet/organic semiconductor online 2 April 2010 Keywords: Bistable device Spin valve Organic semiconductor Magnetoresistance a b s t r a c t We report a study of the electrical bistability and bias-controlled spin valve effect

  11. System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors

    DOE Patents [OSTI]

    Harris, John Richardson; Caporaso, George J; Sampayan, Stephen E

    2013-10-22T23:59:59.000Z

    A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

  12. SPECTROSCOPIE DE DEFAUTS -LUMINESCENCE I. THE ANALYSIS OF WIDE BAND GAP SEMICONDUCTORS

    E-Print Network [OSTI]

    Boyer, Edmond

    on analysis depend very much on the device. In semiconductors, light emitting diodes (LEDs) are formed from pn

  13. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    SciTech Connect (OSTI)

    Zhu, Xiaoyang

    2014-12-10T23:59:59.000Z

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of charge carriers is known to evolve as the carrier concentration increases, due to the presence of intrinsic disorder in organic semiconductors. Thus, a complementary question is: how does the nature of charge transport change as a function of carrier concentration?

  14. Electronic Properties of Disordered Organic Semiconductors via QM/MM Simulations

    E-Print Network [OSTI]

    Difley, Seth

    Organic semiconductors (OSCs) have recently received significant attention for their potential use in photovoltaic, light emitting diode, and field effect transistor devices. Part of the appeal of OSCs is the disordered, ...

  15. Laboratory Thin-Film Encapsulation of Air-Sensitive Organic Semiconductor Devices

    E-Print Network [OSTI]

    Subbarao, Samuel P.

    We present an approach, which is compatible with both glass and polymer substrates, to in-laboratory handling and intra-laboratory shipping of air-sensitive organic semiconductors. Encapsulation approaches are presented ...

  16. Singlet exciton fission, a multi-exciton generation process, in organic semiconductor solar cells

    E-Print Network [OSTI]

    Jadhav, Priyadarshani

    2012-01-01T23:59:59.000Z

    Organic semiconductor photovoltaics hold the promise of cheap production and low manufacturing setup costs. The highest efficiency seen in research labs, ~10% today, is still too low for production. In this work we explore ...

  17. Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide

    E-Print Network [OSTI]

    Pereira, LMC; Wahl, U

    Scientic findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last few ...

  18. Spectroscopy of Charge Carriers and Traps in Field-Doped Organic Semiconductors

    SciTech Connect (OSTI)

    Zhu, Xiaoyang; Frisbie, C Daniel

    2012-08-13T23:59:59.000Z

    This research project aims to achieve quantitative and molecular level understanding of charge carriers and traps in field-doped organic semiconductors via in situ optical absorption spectroscopy, in conjunction with time-resolved electrical measurements. During the funding period, we have made major progress in three general areas: (1) probed charge injection at the interface between a polymeric semiconductor and a polymer electrolyte dielectric and developed a thermodynamic model to quantitatively describe the transition from electrostatic to electrochemical doping; (2) developed vibrational Stark effect to probe electric field at buried organic semiconductor interfaces; (3) used displacement current measurement (DCM) to study charge transport at organic/dielectric interfaces and charge injection at metal/organic interfaces.

  19. Electronic coupling in organic-inorganic semiconductor hybrid structures with type-II energy level alignment

    E-Print Network [OSTI]

    Peters, Achim

    Electronic coupling in organic-inorganic semiconductor hybrid structures with type-II energy level Electronic coupling in a hybrid structure made of ZnMgO and a spirobifluorene derivative SP6 is inves- tigated in the situation where the energy level alignment at the organic/inorganic interface revealed

  20. Rational Design and Preparation of Organic Semiconductors for use in Field Effect Transistors and Photovoltaic Cells

    E-Print Network [OSTI]

    Mauldin, Clayton Edward

    2010-01-01T23:59:59.000Z

    Distyryl Oligothiophene Semiconductors Abstract We describebonded Oligothiophene Semiconductor Side Chains Abstract Ato assemble oligothiophene semiconductors and control their

  1. Exciton/Charge-transfer Electronic Couplings in Organic Semiconductors

    E-Print Network [OSTI]

    Difley, Seth

    Charge transfer (CT) states and excitons are important in energy conversion processes that occur in organic light emitting devices (OLEDS) and organic solar cells. An ab initio density functional theory (DFT) method for ...

  2. Strain-induced vertical self-organization of semiconductor quantum dots: A computational study

    SciTech Connect (OSTI)

    Shtinkov, N., E-mail: nshtinkov@uottawa.ca [Department of Physics, University of Ottawa, 150 Louis Pasteur, Ottawa (Ontario) K1N 6N5 (Canada)

    2013-12-28T23:59:59.000Z

    Atomistic strain simulations based on the valence force field method are employed to study the vertical arrangements of semiconductor quantum dot (QD) multilayers. The effects of the QD shape, dimensions, and materials parameters are systematically investigated, varying independently the following parameters: spacer width H, QD lateral spacing D, base b, and height h, slope of the side facets, elastic properties of the dot and the substrate materials, and lattice mismatch between the dot and the substrate. The transition between vertically aligned and anti-aligned structures is found to be determined mainly by the ratios H/D and b/D, as well as by the strain anisotropy of the substrate and to a lesser extent of the QD. The dependence on the QD height h is significant only for steep side facets and large aspect ratios h/b, and the effects of the lattice mismatch strain and the bulk elastic moduli are found to be negligible. The comparison with experimental data shows an excellent agreement with the results from the simulations, demonstrating that the presented analysis results in precise theoretical predictions for the vertical self-organization regime in a wide range of QD materials systems.

  3. Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

    SciTech Connect (OSTI)

    Chang-Hwan Kim

    2003-12-12T23:59:59.000Z

    Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms.

  4. Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same

    DOE Patents [OSTI]

    Abraham, Marvin M. (Oak Ridge, TN); Chen, Yok (Oak Ridge, TN); Kernohan, Robert H. (Oak Ridge, TN)

    1981-01-01T23:59:59.000Z

    This invention relates to novel and comparatively inexpensive semiconductor devices utilizing semiconducting alkaline-earth-oxide crystals doped with alkali metal. The semiconducting crystals are produced by a simple and relatively inexpensive process. As a specific example, a high-purity lithium-doped MgO crystal is grown by conventional techniques. The crystal then is heated in an oxygen-containing atmosphere to form many [Li].degree. defects therein, and the resulting defect-rich hot crystal is promptly quenched to render the defects stable at room temperature and temperatures well above the same. Quenching can be effected conveniently by contacting the hot crystal with room-temperature air.

  5. High-Performance Solution-Processed Amorphous-Oxide-Semiconductor TFTs with Organic Polymeric Gate Dielectrics

    E-Print Network [OSTI]

    Pecunia, Vincenzo; Banger, Kulbinder; Sirringhaus, Henning

    2015-01-13T23:59:59.000Z

    energy offsets (? 1 eV) between the conduction/valence bands of the semiconductor and the gate dielectric are needed to confine the charge carriers at the active interface and minimize undesirable charge injection from the semiconductor into the gate... in solution, all the other polymers came in the form of pellets or powder and were dissolved in suitable anhydrous organic solvents: P?MS was dissolved in xylene at a concentration of 60 mg mL-1; SAN in butyronitrile at 40 mg mL-1; PC in 1,2-dichlorobenzene...

  6. Exfoliation of self-assembled 2D organic-inorganic perovskite semiconductors

    E-Print Network [OSTI]

    Steiner, Ullrich

    Exfoliation of self-assembled 2D organic-inorganic perovskite semiconductors Wendy Niu,1,a) Anna-inorganic perovskite (C6H9C2H4NH3)2PbI4 are produced using micromechanical exfoliation. Mono- and few-layer areas microme- chanical exfoliation of 2D PbI perovskites and explore the few-layer behaviour of such systems

  7. Measurement of molecular motion in organic semiconductors by thermal diffuse electron scattering

    E-Print Network [OSTI]

    Eggeman, Alexander S; Illig, Steffen; Troisi, Alessandro; Sirringhaus, Henning; Midgley, Paul A

    2013-07-28T23:59:59.000Z

    in localisation of the charge carriers (3). Recently, it has been reported that this dynamic disorder model provides a consistent framework for understanding the electrical and optical properties of charge carriers in crystalline, high mobility molecular... The final version of this article can be accessed at: Nature Materials 12, 1045-1049 (2013) http://www.nature.com/doifinder/10.1038/nmat3710 1 Title: Direct Measurement of Molecular Motion in Organic Semiconductors Authors: Alexander S. Eggeman,1...

  8. Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resists

    E-Print Network [OSTI]

    Mendoza, Hiroshi A.

    To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO[subscript 2] resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature ...

  9. Utilizing GQM+ Strategies for an Organization-Wide Earned Value Analysis

    E-Print Network [OSTI]

    Basili, Victor R.

    in software engineering standards or its body of knowledge. Earned value (management) is the resultUtilizing GQM+ Strategies for an Organization-Wide Earned Value Analysis 1 Vladimir Mandic, 2-wide earned value analysis by taking advan- tage of the hierarchical structure of the GQM+ Strategies grid

  10. Photoluminescence polarization anisotropy for studying long-range structural ordering within semiconductor multi-atomic alloys and organic crystals

    SciTech Connect (OSTI)

    Prutskij, T.; Percino, J. [Instituto de Ciencias, BUAP, Privada 17 Norte, No 3417, col. San Miguel Huyeotlipan, 72050, Puebla, Pue. (Mexico); Orlova, T. [Department of Chemical and Biochemical Engineering, University of Notre Dame, Notre Dame, IN (United States); Vavilova, L. [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation (Russian Federation)

    2013-12-04T23:59:59.000Z

    Long-range structural ordering within multi-component semiconductor alloys and organic crystals leads to significant optical anisotropy and, in particular, to anisotropy of the photoluminescence (PL) emission. The PL emission of ternary and quaternary semiconductor alloys is polarized if there is some amount of the atomic ordering within the crystal structure. We analyze the polarization of the PL emission from the quaternary GaInAsP semiconductor alloy grown by Liquid Phase Epitaxy (LPE) and conclude that it could be caused by low degree atomic ordering within the crystal structure together with the thermal biaxial strain due to difference between the thermal expansion coefficients of the layer and the substrate. We also study the state of polarization of the PL from organic crystals in order to identify different features of the crystal PL spectrum.

  11. Modeling of the Thermoelectric Properties of Quasi-One-Dimensional Organic Semiconductors , A.A. Balandin2

    E-Print Network [OSTI]

    Modeling of the Thermoelectric Properties of Quasi-One-Dimensional Organic Semiconductors A. Casian Electrical conductivity , Seebeck coefficient S, electronic thermal conductivity e and the thermoelectric the general principles of solid state physics there is no upper limit for the thermoelectric figure of merit

  12. Epitaxial growth of 100-?m thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al{sub 2}O{sub 3} substrates

    SciTech Connect (OSTI)

    Hu, Bolin; Su, Zhijuan; Bennett, Steve; Chen, Yajie, E-mail: y.chen@neu.edu; Harris, Vincent G. [Center for Microwave Magnetic Materials and Integrated Circuits and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

    2014-05-07T23:59:59.000Z

    Thick barium hexaferrite BaFe{sub 12}O{sub 19} (BaM) films having thicknesses of ?100??m were epitaxially grown on GaN/Al{sub 2}O{sub 3} substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4?M{sub s}, was measured for as-grown films to be 4.6 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ?100?Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simple powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.

  13. Mechanistic Studies of Charge Injection from Metallic Electrodes into Organic Semiconductors Mediated by Ionic Functionalities: Final Report

    SciTech Connect (OSTI)

    Nguyen, Thuc-Quyen [UCSB; Bazan, Guillermo [UCSB; Mikhailovsky, Alexander [UCSB

    2014-04-15T23:59:59.000Z

    Metal-organic semiconductor interfaces are important because of their ubiquitous role in determining the performance of modern electronics such as organic light emitting diodes (OLEDs), fuel cells, batteries, field effect transistors (FETs), and organic solar cells. Interfaces between metal electrodes required for external wiring to the device and underlying organic structures directly affect the charge carrier injection/collection efficiency in organic-based electronic devices primarily due to the mismatch between energy levels in the metal and organic semiconductor. Environmentally stable and cost-effective electrode materials, such as aluminum and gold typically exhibit high potential barriers for charge carriers injection into organic devices leading to increased operational voltages in OLEDs and FETs and reduced charge extraction in photovoltaic devices. This leads to increased power consumption by the device, reduced overall efficiency, and decreased operational lifetime. These factors represent a significant obstacle for development of next generation of cheap and energy-efficient components based on organic semiconductors. It has been noticed that introduction of organic materials with conjugated backbone and ionic pendant groups known as conjugated poly- and oligoelectrolytes (CPEs and COEs), enables one to reduce the potential barriers at the metal-organic interface and achieve more efficient operation of a device, however exact mechanisms of the phenomenon have not been understood. The goal of this project was to delineate the function of organic semiconductors with ionic groups as electron injection layers. The research incorporated a multidisciplinary approach that encompassed the creation of new materials, novel processing techniques, examination of fundamental electronic properties and the incorporation of the resulting knowledgebase into development of novel organic electronic devices with increased efficiency, environmental stability, and reduced cost. During the execution of the project, main efforts were focused on the synthesis of new charge-bearing organic materials, such as CPEs and COEs, and block copolymers with neutral and ionic segments, studies of mechanisms responsible for the charge injection modulation in devices with ionic interlayers, and use of naturally occurring charged molecules for creation of enhanced devices. The studies allowed PIs to demonstrate the usefulness of the proposed approach for the improvement of operational parameters in model OLED and FET systems resulting in increased efficiency, decreased contact resistance, and possibility to use stable metals for fabrication of device electrodes. The successful proof-of-the-principle results potentially promise development of light-weight, low fabrication cost devices which can be used in consumer applications such as displays, solar cells, and printed electronic devices. Fundamental mechanisms responsible for the phenomena observed have been identified thus advancing the fundamental knowledgebase.

  14. Quantum interference measurement of spin interactions in a bio-organic/semiconductor device structure

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Deo, Vincent [Ecole Polytechnique, Palaiseau (France); Virginia Tech, Blacksburg, VA (United States); Zhang, Yao [Virginia Tech, Blacksburg, VA (United States); Soghomonian, Victoria [Virginia Tech, Blacksburg, VA (United States); Heremans, Jean J. [Virginia Tech, Blacksburg, VA (United States)

    2015-03-30T23:59:59.000Z

    Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biological functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.

  15. Quantum interference measurement of spin interactions in a bio-organic/semiconductor device structure

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; Heremans, Jean J.

    2015-03-30T23:59:59.000Z

    Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biologicalmorefunctions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.less

  16. Features of the spectral dependences of transmittance of organic semiconductors based on tert-butyl substituted lutetium phthalocyanine molecules

    SciTech Connect (OSTI)

    Belogorokhov, I. A., E-mail: jugqwerty@mail.ru [State Research and Project Institute of Rare-Metal Industry GIREDMET (Russian Federation); Tikhonov, E. V. [Moscow State University (Russian Federation); Dronov, M. A. [Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation); Belogorokhova, L. I. [Moscow State University (Russian Federation); Ryabchikov, Yu. V. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Tomilova, L. G.; Khokhlov, D. R. [Moscow State University (Russian Federation)

    2011-11-15T23:59:59.000Z

    Vibronic properties of organic semiconductors based on tert-butyl substituted phthalocyanine lutetium diphthalocyanine molecules are studied by IR and Raman spectroscopy. It is shown that substitution of several carbon atoms in initial phthalocyanine (Pc) ligands with {sup 13}C isotope atoms causes a spectral shift in the main absorption lines attributed to benzene, isoindol, and peripheral C-H groups. A comparison of spectral characteristics showed that the shift can vary from 3 to 1 cm{sup -1}.

  17. Rational Design and Preparation of Organic Semiconductors for use in Field Effect Transistors and Photovoltaic Cells

    E-Print Network [OSTI]

    Mauldin, Clayton Edward

    2010-01-01T23:59:59.000Z

    in thin film organic photovoltaic cells (OPVs) is presented.efficient organic photovoltaic cells with power conversionEffect Transistors and Photovoltaic Cells By Clayton Edward

  18. High performance organic field-effect transistors with ultra-thin HfO{sub 2} gate insulator deposited directly onto the organic semiconductor

    SciTech Connect (OSTI)

    Ono, S., E-mail: shimpei@criepi.denken.or.jp [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Husermann, R. [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan) [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland); Chiba, D. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan) [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 322-0012 (Japan); Department of Applied Physics, University of Tokyo, Tokyo 113-8656 (Japan); Shimamura, K.; Ono, T. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)] [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); Batlogg, B. [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)] [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)

    2014-01-06T23:59:59.000Z

    We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO{sub 2} gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm{sup 2}/V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO{sub 2} layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor.

  19. Effects of PMMA-transfer residues on the growth of organic semiconductor molecules on CVD graphene

    E-Print Network [OSTI]

    Kratzer, Markus; Bayer, Bernhard C.; Kidambi, Piran R.; Matkovi?, Aleksandar; Gaji?, Rado; Cabrero-Vilatela, Andrea; Weatherup, Robert S.; Hofmann, Stephan; Teichert, Christian

    2015-03-09T23:59:59.000Z

    Scalably grown and transferred graphene is a highly promising material for organic electronic applications, but controlled interfacing of graphene thereby remains a key challenge. Here, we study the growth characteristics of the important organic...

  20. Two-photon Photoemission of Organic Semiconductor Molecules on Ag(111)

    E-Print Network [OSTI]

    Yang, Aram

    2008-01-01T23:59:59.000Z

    Supramolecular organization in ultra-thin ?lms of alpha-sexithiophene on sili- con dioxide. Nature Materials,

  1. Rational Design and Preparation of Organic Semiconductors for use in Field Effect Transistors and Photovoltaic Cells

    E-Print Network [OSTI]

    Mauldin, Clayton Edward

    2010-01-01T23:59:59.000Z

    in thin film organic photovoltaic cells (OPVs) is presented.Effect Transistors and Photovoltaic Cells By Clayton EdwardEffect Transistors and Photovoltaic Cells By Clayton Edward

  2. PHYSICAL REVIEW B 85, 075204 (2012) Semiclassical theory of magnetoresistance in positionally disordered organic semiconductors

    E-Print Network [OSTI]

    Flatte, Michael E.

    2012-01-01T23:59:59.000Z

    December 2011; published 7 February 2012) A recently introduced percolative theory of unipolar organic transport in organic materials is percolation theory.22,23 Recently a model24 has been developed of OMARPHYSICAL REVIEW B 85, 075204 (2012) Semiclassical theory of magnetoresistance in positionally

  3. DOI: 10.1002/adem.200800289 Dewetting of an Organic Semiconductor Thin Film Observed

    E-Print Network [OSTI]

    Peters, Achim

    with controlled lateral distances and size. It has recently been shown that dewetting and thermal stability such as thin film transistors,[6] organic photovoltaics and organic light emitting diodes. In this paper we study the planar aromatic molecule diindenoperylene (DIP) as a model system, which has been shown

  4. 2012 DEFECTS IN SEMICONDUCTORS GORDON RESEARCH CONFERENCE, AUGUST 12-17, 2012

    SciTech Connect (OSTI)

    GLASER, EVAN

    2012-08-17T23:59:59.000Z

    The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

  5. The synthesis of inorganic semiconductor nanocrystalline materials for the purpose of creating hybrid organic/inorganic light-emitting devices

    E-Print Network [OSTI]

    Steckel, Jonathan S. (Jonathan Stephen)

    2006-01-01T23:59:59.000Z

    Colloidal semiconductor nanocrystals (NCs) or quantum dots (QDs) can be synthesized to efficiently emit light from the ultraviolet, across the entire visible spectrum, and into the near infrared. This is now possible due ...

  6. Isotopically controlled semiconductors

    E-Print Network [OSTI]

    Haller, Eugene E.

    2006-01-01T23:59:59.000Z

    16 Isotopically Controlled Semiconductors Eugene E. Hallerof isotopically engineered semiconductors; for outstandingisotopically controlled semiconductor crystals. This article

  7. Raman scattering in organic semiconductors based on erbium biphthalocyanine molecules and chlorine-containing europium-lutetium triphthalocyanine molecules

    SciTech Connect (OSTI)

    Belogorokhov, I. A., E-mail: jugqwerty@mail.ru [Federal State Research and Design Institute for Rare-Metal Industry (Russian Federation); Mamichev, D. A.; Dronov, M. A.; Pushkarev, V. E.; Tomilova, L. G.; Khokhlov, D. R. [Moscow State University (Russian Federation)

    2010-08-15T23:59:59.000Z

    The Raman spectra of semiconductor structures based on erbium biphthalocyanine molecules and chlorine-substituted europium-lutetium triphthalocyanine molecules are studied on excitation with Ar{sup +} laser radiation at the wavelength 514 nm. The data on the spectral position of Raman intensity peaks related to vibronic states of the basic molecular groups forming the semiconductor are obtained. Raman lines irrelevant to the known vibronic states of the basic phthalocyanine molecular groups are observed in the ranges 100-500 and 500-900 cm{sup -1}. It is shown that, in the spectra of triphthalocyanine, some lines are structurally complex and shifted with respect to the characteristic lines of molecular groups by several inverse centimeters.

  8. SEMICONDUCTOR DETECTORS - AN INTRODUCTION

    E-Print Network [OSTI]

    Goulding, F.S.

    2011-01-01T23:59:59.000Z

    infrinfc primely owned dtfiw. SEMICONDUCTOR DETECTORS - ANi) LBL-7282 I. History Semiconductor detectors appeared onof alpha particles by semiconductor diodes several years

  9. Isotopically controlled semiconductors

    E-Print Network [OSTI]

    Haller, E.E.

    2004-01-01T23:59:59.000Z

    and phonons in semiconductors, J. Non-Cryst. Solids 141 (LVM) Spectroscopy of Semiconductors, Mat. Res. Soc. Symp.Isotopically Engineered Semiconductors New Media for the

  10. Isotopically controlled semiconductors

    E-Print Network [OSTI]

    Haller, Eugene E.

    2001-01-01T23:59:59.000Z

    Transmutation Doping of Semiconductor Materials, NationalTransmutation Doping of Semiconductor Materials, NationalProperties of Doped Semiconductors , Solid State Series,

  11. Semiconductor Nanowires: What's Next?

    E-Print Network [OSTI]

    Yang, Peidong

    2011-01-01T23:59:59.000Z

    Semiconductor nanowires, whats next? Peidong Yang, Ruoxuelater research into semiconductor whiskers with nanoscalewere popularized as semiconductor nanowires in the following

  12. Opportunities for Wide Bandgap Semiconductor Power Electronics...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    - Partial Listing of Copyright 2014, Cree Inc. pg. 14 1200V SiC MOSFET design wins in PV inverters 1200V, 80m SiC MOSFETs have been selected by Japan's Sanix Inc. 9.9kW...

  13. INFOGRAPHIC: Wide Bandgap Semiconductors | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy ChinaofSchaefer To:Department ofOral TestimonyEnergyFinding U.INDIANAPOLISINFOGRAPHIC:

  14. INFOGRAPHIC: Wide Bandgap Semiconductors | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't YourTransport(Fact Sheet), GeothermalGridHYDROGEND DTechnologiesFindingThe Road to

  15. Stretchable semiconductor elements and stretchable electrical circuits

    DOE Patents [OSTI]

    Rogers, John A. (Champaign, IL); Khang, Dahl-Young (Seoul, KR); Menard, Etienne (Durham, NC)

    2009-07-07T23:59:59.000Z

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  16. Genome-wide SNP discovery in walnut with an AGSNP pipeline updated for SNP discovery in allogamous organisms

    E-Print Network [OSTI]

    2012-01-01T23:59:59.000Z

    in walnut with an AGSNP pipeline updated for SNP discoveryin walnut with an AGSNP pipeline updated for SNP discoverythe development of a pipeline (AGSNP) for genome-wide SNP

  17. On the inapplicability of electron-hopping models for the organic semiconductor Phenyl-C61-butyric Acid Methyl Ester (PCBM)

    SciTech Connect (OSTI)

    Gajdos, Fruzsina; Oberhofer, Harald; Dupuis, Michel; Blumberger, Jochen

    2013-03-21T23:59:59.000Z

    Phenyl-C61-butyric Acid Methyl Ester (PCBM) is one of the most popular semiconductors in organic photovoltaic cells, but the electron transport mechanism in the microcrystalline domains of this material as well as its preferred packing structure remains unclear. Here we use density functional theory to calculate electronic coupling matrix elements, reorganization energies and activation energies for available experimental and model crystal structures. We find that the picture of an excess electron hopping from one fullerene to another does not apply for any of the crystalline phases, rendering traditional rate equations inappropriate. We also find that the cohesive energy increases in the order body-centred-cubic < hexagonal < simple cubic < monoclinic < triclinic, independently on the type of dispersion correction used. Our results indicate that the electron-ion dynamics needs to be solved explicitly in order to obtain a realistic description of charge transfer in this material. M.D. was supported by the U.S. Department of Energy (DOE), Office of Basic Energy Sciences (BES), Division of Chemical Sciences, Geosciences and Biosciences. PNNL is a multiprogram national laboratory operated for DOE by Battelle.

  18. Patterning Organic Electronics Based on Nanoimprint Lithography

    E-Print Network [OSTI]

    Lo, Yi-Chen

    2014-04-25T23:59:59.000Z

    with organic semiconductors. This technique was then used to fabricate passive-matrix organic light-emitting diode (PMOLED) arrays for flat-panel display applications. Fabrication of a self-aligned bottom gate electrode for organic metal semiconductor field...

  19. Silicon surface passivation by an organic overlayer of 9,10-phenanthrenequinone

    E-Print Network [OSTI]

    ,10-phenanthrenequinone, PQ . PQ reacts with the dangling bonds, thus providing a bridge between organic semiconductors in integrating organic and silicon-based semiconductor devices.13 Organic- semiconductor/silicon interfaces can

  20. Semiconductor Ion Implanters

    SciTech Connect (OSTI)

    MacKinnon, Barry A. [Isys, 2727 Walsh Ave., Suite 103, Santa Clara, CA 95051 (United States); Ruffell, John P. [Group 3, LLC, Sunnyvale, CA 94086 (United States)

    2011-06-01T23:59:59.000Z

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  1. DOE Announces Webinars on Zero Energy Ready Homes, Wide Bandgap...

    Broader source: Energy.gov (indexed) [DOE]

    on Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications Webinar Sponsor: Fuel Cell Technologies Office The Energy...

  2. Wafer-fused semiconductor radiation detector

    DOE Patents [OSTI]

    Lee, Edwin Y. (Livermore, CA); James, Ralph B. (Livermore, CA)

    2002-01-01T23:59:59.000Z

    Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

  3. Life-cycle Assessment of Semiconductors

    E-Print Network [OSTI]

    Boyd, Sarah B.

    2009-01-01T23:59:59.000Z

    SemiconductorThe Semiconductor Industry: Size, Growth andSemiconductor Life-cycle Environmental Impacts . . . . . . .

  4. Direct comparative study on the energy level alignments in unoccupied/occupied states of organic semiconductor/electrode interface by constructing in-situ photoemission spectroscopy and Ar gas cluster ion beam sputtering integrated analysis system

    SciTech Connect (OSTI)

    Yun, Dong-Jin, E-mail: Dongjin.yun@samsung.com; Chung, JaeGwan; Kim, Yongsu; Park, Sung-Hoon; Kim, Seong-Heon; Heo, Sung [Analytical Science Laboratory of Samsung Advanced Institute of Technology, PO Box 14-1, Yongin 446-712 (Korea, Republic of)

    2014-10-21T23:59:59.000Z

    Through the installation of electron gun and photon detector, an in-situ photoemission and damage-free sputtering integrated analysis system is completely constructed. Therefore, this system enables to accurately characterize the energy level alignments including unoccupied/occupied molecular orbital (LUMO/HOMO) levels at interface region of organic semiconductor/electrode according to depth position. Based on Ultraviolet Photoemission Spectroscopy (UPS), Inverse Photoemission Spectroscopy (IPES), and reflective electron energy loss spectroscopy, the occupied/unoccupied state of in-situ deposited Tris[4-(carbazol-9-yl)phenyl]amine (TCTA) organic semiconductors on Au (E{sub LUMO}: 2.51?eV and E{sub HOMO}: 1.35?eV) and Ti (E{sub LUMO}: 2.19?eV and E{sub HOMO}: 1.69?eV) electrodes are investigated, and the variation of energy level alignments according to work function of electrode (Au: 4.81?eV and Ti: 4.19?eV) is clearly verified. Subsequently, under the same analysis condition, the unoccupied/occupied states at bulk region of TCTA/Au structures are characterized using different Ar gas cluster ion beam (Ar GCIB) and Ar ion sputtering processes, respectively. While the Ar ion sputtering process critically distorts both occupied and unoccupied states in UPS/IPES spectra, the Ar GCIB sputtering process does not give rise to damage on them. Therefore, we clearly confirm that the in-situ photoemission spectroscopy in combination with Ar GCIB sputtering allows of investigating accurate energy level alignments at bulk/interface region as well as surface region of organic semiconductor/electrode structure.

  5. Wide Bandgap Extrinsic Photoconductive Switches

    SciTech Connect (OSTI)

    Sullivan, J S

    2012-01-17T23:59:59.000Z

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  6. Details in Semiconductors Gordon Conference, New London, NH, August 3-8, 2008

    SciTech Connect (OSTI)

    Shengbai Zhang and Nancy Ryan Gray

    2009-09-16T23:59:59.000Z

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in homogeneous and structured semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, with an increases emphasis on nanostructures as compared to previous conferences. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference deals with defects in a broad range of bulk and nanoscale electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, doped nanoparticles, and organic semiconductors. Presentations of state-of-the-art theoretical methods will contribute to a fundamental understanding of atomic-scale phenomena. The program consists of about twenty invited talks, with plenty of discussion time, and a number of contributed poster sessions. Because of the large amount of discussion time, the conference provides an ideal forum for dealing with topics that are new and/or controversial.

  7. Hydrogen in semiconductors and insulators

    E-Print Network [OSTI]

    Van de Walle, Chris G.

    2007-01-01T23:59:59.000Z

    level in two different semiconductors, illustrating the06-01999R1 Hydrogen in semiconductors and insulators SpecialA. oxide materials; A. semiconductors; C. electronic

  8. Infrared spectroscopy of novel semiconductors /

    E-Print Network [OSTI]

    Chapler, Brian Caleb

    2014-01-01T23:59:59.000Z

    dilute magnetic semiconductor . . . . . . . . 1 1.1.1in the topological semiconductors Bi2Te3 and MndopedM. Fundamentals of semiconductors. Springer-Verlag, Berlin,

  9. Novel room temperature ferromagnetic semiconductors

    E-Print Network [OSTI]

    Gupta, Amita

    2004-01-01T23:59:59.000Z

    Spin Related Phenomena in Semiconductors, (27-28 Jan 1997,FERROMAGNETIC SEMICONDUCTORS Amita Gupta Stockholm, Junedata are processed by semiconductor chips, and stored in the

  10. Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Peng, Xiaogang (Fayetteville, AR); Manna, Liberato (Palo del Colle, IT)

    2001-01-01T23:59:59.000Z

    A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  11. Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Peng, Xiaogang (Fayetteville, AR); Manna, Liberato (Palo del Colle, IT)

    2001-01-01T23:59:59.000Z

    A process for the formation of shaped Group II-VI semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  12. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Savoy, IL); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Urbana, IL)

    2009-11-24T23:59:59.000Z

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  13. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2014-03-04T23:59:59.000Z

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  14. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2013-05-14T23:59:59.000Z

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  15. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Patents [OSTI]

    Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Daejeon, KR); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Urbana, IL)

    2011-07-19T23:59:59.000Z

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  16. Low trap states in in situ SiN{sub x}/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

    SciTech Connect (OSTI)

    Lu, Xing; Ma, Jun; Jiang, Huaxing; Liu, Chao; Lau, Kei May, E-mail: eekmlau@ust.hk [Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-09-08T23:59:59.000Z

    We report the use of SiN{sub x} grown in situ by metal-organic chemical vapor deposition as the gate dielectric for AlN/GaN metal-insulator-semiconductor (MIS) structures. Two kinds of trap states with different time constants were identified and characterized. In particular, the SiN{sub x}/AlN interface exhibits remarkably low trap state densities in the range of 10{sup 11}10{sup 12?}cm{sup ?2}eV{sup ?1}. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the in situ SiN{sub x} layer can provide excellent passivation without causing chemical degradation to the AlN surface. These results imply the great potential of in situ SiN{sub x} as an effective gate dielectric for AlN/GaN MIS devices.

  17. Study of the transport properties of organic semiconductors based on europium diphthalocyanine and bi-tris-phthalocyanine complexes with ortho-bis(oxymethyl)phenyl bridge and based on erbium and europium dinaphthalocyanine complexes

    SciTech Connect (OSTI)

    Belogorokhov, I. A., E-mail: jugqwerty@mail.ru [State Research and Project Institute of Rare-Metal Industry GIREDMET (Russian Federation); Tikhonov, E. V. [Moscow State University (Russian Federation); Dronov, M. A. [Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation); Ryabchikov, Yu. V. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Pashkova, N. V.; Kladova, E. I. [State Research and Project Institute of Rare-Metal Industry GIREDMET (Russian Federation); Belogorokhova, L. I.; Tomilova, L. G.; Khokhlov, D. R. [Moscow State University (Russian Federation)

    2011-11-15T23:59:59.000Z

    The transport properties of organic semiconductors based on europium diphthalocyanine and bitris-phthalocyanine complexes with ortho-bis(oxymethyl)phenyl bridge and based on europium and erbium dinaphthalocyanine are studied. The temperature dependences of the dc conductivity for all types of the structures under study are obtained; it is shown that all dependences include two activation portions. For high-temperature portions, the activation energies are determined as 0.85 eV for europium diphthalocyanine with the ortho-bis(oxymethyl)phenyl bridge, 1.135 eV for europium bi-tris-phthalocyanine with the orthobis(oxymethyl)phenyl bridge, 0.98 eV for europium dinaphthalocyanine, and 1.18 eV for erbium dinaphthalocyanine. For the low-temperature activation portion, it is shown that lanthanide ions and their bond with a ligand make the dominant contribution to the conductivity of the structures under study.

  18. Inorganic Chemistry Solutions to Semiconductor Nanocrystal Problems

    SciTech Connect (OSTI)

    Alvarado, Samuel R. [Ames Laboratory; Guo, Yijun [Ames Laboratory; Ruberu, T. Purnima A. [Ames Laboratory; Tavasoli, Elham [Ames Laboratory; Vela, Javier [Ames Laboratory

    2014-03-15T23:59:59.000Z

    The optoelectronic and chemical properties of semiconductor nanocrystals heavily depend on their composition, size, shape and internal structure, surface functionality, etc. Available strategies to alter these properties through traditional colloidal syntheses and ligand exchange methods place a premium on specific reaction conditions and surfactant combinations. In this invited review, we apply a molecular-level understanding of chemical precursor reactivity to reliably control the morphology, composition and intimate architecture (core/shell vs. alloyed) of semiconductor nanocrystals. We also describe our work aimed at achieving highly selective, low-temperature photochemical methods for the synthesis of semiconductormetal and semiconductormetal oxide photocatalytic nanocomposites. In addition, we describe our work on surface modification of semiconductor nanocrystal quantum dots using new approaches and methods that bypass ligand exchange, retaining the nanocrystal's native ligands and original optical properties, as well as on spectroscopic methods of characterization useful in determining surface ligand organization and chemistry. Using recent examples from our group and collaborators, we demonstrate how these efforts have lead to faster, wider and more systematic application of semiconductor nanocrystal-based materials to biological imaging and tracking, and to photocatalysis of unconventional substrates. We believe techniques and methods borrowed from inorganic chemistry (including coordination, organometallic and solid state chemistry) have much to offer in reaching a better understanding of the synthesis, functionalization and real-life application of such exciting materials as semiconductor nanocrystals (quantum dots, rods, tetrapods, etc.).

  19. Unitary lens semiconductor device

    DOE Patents [OSTI]

    Lear, Kevin L. (Albuquerque, NM)

    1997-01-01T23:59:59.000Z

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  20. Mismatched semiconductor nanowires: growth and characterization

    E-Print Network [OSTI]

    Yim, Joanne Wing Lan

    2011-01-01T23:59:59.000Z

    SemiconductorFundamentals of Semiconductors: Physics and MaterialsDilute III-V Nitride Semiconductors and Material Systems (

  1. Beam excited acoustic instability in semiconductor quantum plasmas

    SciTech Connect (OSTI)

    Rasheed, A.; Siddique, M.; Huda, F. [Department of Physics, Government College University, Faisalabad 38000 (Pakistan); Jamil, M. [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Jung, Y.-D. [Department of Applied Physics and Department of Bionanotechnology, Hanyang University, Ansan, Kyunggi-Do 426-791 (Korea, Republic of)

    2014-06-15T23:59:59.000Z

    The instability of hole-Acoustic waves due to electron beam in semiconductor quantum plasmas is examined using the quantum hydrodynamic model. The quantum effects are considered including Bohm potential, Fermi degenerate pressure, and exchange potential of the semiconductor quantum plasma species. Our model is applied to nano-sized GaAs semiconductor plasmas. The variation of the growth rate of the unstable mode is obtained over a wide range of system parameters. It is found that the thermal effects of semiconductor species have significance over the hole-Acoustic waves.

  2. Wide bandgap n-type and p-type semiconductor porous junction devices as photovoltaic cells This article has been downloaded from IOPscience. Please scroll down to see the full text article.

    E-Print Network [OSTI]

    solar cells because of their low production cost. Significant breakthroughs in solar cell performances. Introduction Solar cells incorporating organic materials are interesting alternatives to conventional silicon artificial photovoltaic device. In a dye-sensitized solar cell the absorbing dye molecules lie at the large

  3. Semiconductor Nanocomposites DOI: 10.1002/anie.201100200

    E-Print Network [OSTI]

    Lin, Zhiqun

    Semiconductor Nanocomposites DOI: 10.1002/anie.201100200 Semiconductor Anisotropic Nanocomposites-based organic/inorganic hybrid solar cells (e.g., CP/QD composites) are favorable alternatives to inorganic elegant approach is to chemically tether CPs on the QD surface (i.e., preparing CPQD nanocomposites

  4. Interconnected semiconductor devices

    DOE Patents [OSTI]

    Grimmer, Derrick P. (White Bear Lake, MN); Paulson, Kenneth R. (North St. Paul, MN); Gilbert, James R. (St. Paul, MN)

    1990-10-23T23:59:59.000Z

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  5. Semiconductor bridge (SCB) detonator

    DOE Patents [OSTI]

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19T23:59:59.000Z

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  6. Semiconductor bridge (SCB) detonator

    DOE Patents [OSTI]

    Bickes, Jr., Robert W. (Albuquerque, NM); Grubelich, Mark C. (Albuquerque, NM)

    1999-01-01T23:59:59.000Z

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  7. Exploring and enhancing conductivity in semiconductor nanoparticle films

    E-Print Network [OSTI]

    Porter, Venda Jane

    2007-01-01T23:59:59.000Z

    Semiconductor nanocrystals (NCs) are a promising material for use in opto-electronic devices as their optical properties tune with particle size. NCs formed via colloidal synthesis are suspended in solution by the organic ...

  8. Chemical dynamics and bonding at gas/semiconductor and oxide/semiconductor interfaces

    E-Print Network [OSTI]

    Bishop, Sarah R.

    2010-01-01T23:59:59.000Z

    applied to alternative semiconductor materials to determinephase oxides and semiconductor surfaces. Both experimentalunderstanding of the oxide/semiconductor interface. The

  9. SSSSSSSS LLLLSemiconductor System LabSemiconductor System LabSemiconductor System LabSemiconductor System Lab Jaeseo Lee, Gigabit Optical Interface IC Design 1

    E-Print Network [OSTI]

    Yoo, Hoi-Jun

    range Wide Bandwidth Low Noise amplifier is required!! 60~80dB 1) providing dc level restoration 2Semiconductor System Lab Design Goal Gain range : 60~80dB (1k ~ 10k) Wide bandwidth Low Noise CMOS Motivation Transimpedance Amplifier (TIA) Why TIA? Noise Source TIA Noise & Design Solution

  10. Mesoscopic pointlike defects in semiconductors: Deep-level energies D. D. Nolte

    E-Print Network [OSTI]

    Nolte, David D.

    -semiconductor heterostructures to include metal-semiconductor,1 insulator-semiconductor, and superconductor-semiconductor

  11. Organic Spintronics: Influence of Interface Structure and Magnetism...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of organic spintronics. The complexity of the charge and spin transport in organic semiconductors (OS) makes their study extremely challenging. These properties need to be...

  12. Semiconductor Engineers in a Global Economy

    E-Print Network [OSTI]

    Brown, Clair; Linden, Greg

    2007-01-01T23:59:59.000Z

    Technology: The Case of Semiconductors. Brookings Institute:Society, Space, and Semiconductors in The Restructuring Ofin the Global Semiconductor Industry. California

  13. Synthesis and Characterization of Mesoporous Semiconductors

    E-Print Network [OSTI]

    Kang, Chris Byung-hwa

    2012-01-01T23:59:59.000Z

    Brock, S. L. Porous semiconductor chalcogenide aerogels. Nanostructured Semiconductor. J. Am. Chem. Soc. , 127,in mesostructured semiconductors based on the [SnSe 4 ]4-

  14. Semiconductor Nanowires and Nanotubes for Energy Conversion

    E-Print Network [OSTI]

    Fardy, Melissa Anne

    2010-01-01T23:59:59.000Z

    Thermoelectricity in semiconductor nanostructures. Science,splitting using semiconductor electrodes. InternationalChalcogenides, Monographs in Semiconductor Physics, ed. L.S.

  15. Webinar October 21: Opportunities for Wide Bandgap Semiconductor...

    Broader source: Energy.gov (indexed) [DOE]

    Fuel Cell Applications" on Tuesday, October 21, from 12:00 p.m. to 1:00 p.m. Eastern Daylight Time. Numerous applications of hydrogen and fuel cell technologies could benefit from...

  16. Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications

    E-Print Network [OSTI]

    Li, Mo

    for hybrid and electric vehicles, solar photovoltaic inverters, power supply miniaturization and efficiency reliability and efficiency. Georgia Tech also has leading expertise in the metrology of the temperature and stresses in GaN electronics to verify device performance and yield new insight into device reliability

  17. Wide Bandgap Semiconductors for Clean Energy Workshop | Department of

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradley NickellApril 16, 2008 TBD-0075 -In the

  18. Recent emission channeling studies in wide band gap semiconductors

    E-Print Network [OSTI]

    Wahl, Ulrich; Rita, E; Alves, E; Carvalho-Soares, Joo; De Vries, Bart; Matias, V; Vantomme, A

    2005-01-01T23:59:59.000Z

    We present results of recent emission channeling experiments on the lattice location of implanted Fe and rare earths in wurtzite GaN and ZnO. In both cases the majority of implanted atoms are found on substitutional cation sites. The root mean square displacements from the ideal substitutional Ga and Zn sites are given and the stability of the Fe and rare earth lattice location against thermal annealing is discussed.

  19. Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdfBreaking ofOilNEWResponse toOctober 2014Funds forEnergyOperationsEnergyand

  20. Wide Bandgap Semiconductors: Essential to Our Technology Future |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del SolStrengthening

  1. Wide Bandgap Semiconductors: Pursuing the Promise | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy China 2015ofDepartment of EnergyThe U.S. DepartmentEnergy WASHINGTON,Concept

  2. Wide Bandgap Semiconductors for Clean Energy Workshop Agenda

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your DensityEnergy U.S.-China Electric VehicleCenters | Department ofofto PurchaseApril 16,WhoWhy AreWhyPower

  3. Wide Bandgap Semiconductors for Clean Energy Workshop: Summary Report

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your DensityEnergy U.S.-China Electric VehicleCenters | Department ofofto PurchaseApril 16,WhoWhy

  4. Webinar October 21: Opportunities for Wide Bandgap Semiconductor Power

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: SinceDevelopment | Department ofPartnerships ToolkitWaste Heat Wasteof|WebinarElectronics for

  5. Broad-area tandem semiconductor laser

    SciTech Connect (OSTI)

    Chen, T.R.; Mehuys, D.; Zhuang, Y.H.; Mittelstein, M.; Wang, H.; Derry, P.L.; Kajanto, M.; Yariv, A.

    1988-10-17T23:59:59.000Z

    A tandem combination of a uniform gain broad-area semiconductor laser and a (lateral) periodic gain section displays a stable, near-diffraction-limited single-lobed far-field pattern. The GaAs/GaAlAs quantum well lasers display a high degree of coherence across 60-..mu..m-wide apertures provided that the broad-area section is sufficiently long.

  6. Blasting detonators incorporating semiconductor bridge technology

    SciTech Connect (OSTI)

    Bickes, R.W. Jr.

    1994-05-01T23:59:59.000Z

    The enormity of the coal mine and extraction industries in Russia and the obvious need in both Russia and the US for cost savings and enhanced safety in those industries suggests that joint studies and research would be of mutual benefit. The author suggests that mine sites and well platforms in Russia offer an excellent opportunity for the testing of Sandia`s precise time-delay semiconductor bridge detonators, with the potential for commercialization of the detonators for Russian and other world markets by both US and Russian companies. Sandia`s semiconductor bridge is generating interest among the blasting, mining and perforation industries. The semiconductor bridge is approximately 100 microns long, 380 microns wide and 2 microns thick. The input energy required for semiconductor bridge ignition is one-tenth the energy required for conventional bridgewire devices. Because semiconductor bridge processing is compatible with other microcircuit processing, timing and logic circuits can be incorporated onto the chip with the bridge. These circuits can provide for the precise timing demanded for cast effecting blasting. Indeed tests by Martin Marietta and computer studies by Sandia have shown that such precise timing provides for more uniform rock fragmentation, less fly rock, reduce4d ground shock, fewer ground contaminants and less dust. Cost studies have revealed that the use of precisely timed semiconductor bridges can provide a savings of $200,000 per site per year. In addition to Russia`s vast mineral resources, the Russian Mining Institute outside Moscow has had significant programs in rock fragmentation for many years. He anticipated that collaborative studies by the Institute and Sandia`s modellers would be a valuable resource for field studies.

  7. Method of doping a semiconductor

    DOE Patents [OSTI]

    Yang, Chiang Y. (Miller Place, NY); Rapp, Robert A. (Columbus, OH)

    1983-01-01T23:59:59.000Z

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  8. Quantum Semiconductor Modeling Ansgar Jungel

    E-Print Network [OSTI]

    Jngel, Ansgar

    Quantum Semiconductor Modeling Ansgar Jungel Vienna University of Technology, Austria www.jungel.at.vu Ansgar Jungel (TU Wien) Quantum Semiconductor Modeling www.jungel.at.vu 1 / 154 #12;Contents 1 Introduction 2 Semiconductor modeling 3 Microscopic quantum models Density matrices Schrodinger models Wigner

  9. Polaron spin current transport in organic semiconductors

    E-Print Network [OSTI]

    Watanabe, Shun; Ando, Kazuya; Kang, Keehoon; Mooser, Sebastian; Vaynzof, Yana; Kurebayashi, Hidekazu; Saitoh, Eiji; Sirringhaus, Henning

    2014-03-16T23:59:59.000Z

    due to unintentional dop- ing and/or thermal injection from the electrodes (see SI sections C and D). The resistivity of the PBTTT film was determined to be 1.8 G? cm. As a result of this high resistivity the PBTTT films provide electrical isolation... of the nonmagnetic metal (NM) layer. The voltage signal for a Ni80Fe20 (10 nm)/PBTTT (40 nm)/Au (40 nm), in which Pt is replaced by Au, significantly decreases (Fig. 2d), and no voltage signals were detected in a Ni80Fe20 (10 nm)/PBTTT (40 nm)/Cu (300 nm) trilayer...

  10. Synthetic Control of Organic Semiconductor Excited States

    E-Print Network [OSTI]

    Clem, Tabitha Ann

    2010-01-01T23:59:59.000Z

    controlled Keithley 236 SMU. References Thompson, B. ;controlled Keithley 236 SMU. References Markov, D. E. ;controlled Keithley 236 SMU. Polymer mobility was measured

  11. Synthetic Control of Organic Semiconductor Excited States

    E-Print Network [OSTI]

    Clem, Tabitha Ann

    2010-01-01T23:59:59.000Z

    Properties and Photovoltaic Performance. Abstract Theproperties, and photovoltaic performance of a small moleculeproperties, and photovoltaic performance of a small molecule

  12. Synthetic Control of Organic Semiconductor Excited States

    E-Print Network [OSTI]

    Clem, Tabitha Ann

    2010-01-01T23:59:59.000Z

    obtained (J sc or short-circuit current density) and thephotocurrent, the short circuit current density in the Pt-

  13. Structural Phase Contrast in Polycrystalline Organic Semiconductor

    E-Print Network [OSTI]

    Peinke, Joachim

    electronics", with devices such as light- emitting diodes, lasers, photovoltaic cells, field-effect transis

  14. Novel room temperature ferromagnetic semiconductors

    SciTech Connect (OSTI)

    Gupta, Amita

    2004-11-01T23:59:59.000Z

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous distribution of Mn substituting for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

  15. Kansas Advanced Semiconductor Project

    SciTech Connect (OSTI)

    Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

    2007-09-21T23:59:59.000Z

    KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

  16. Synthesis and Characterization of Mesoporous Semiconductors and Their Energy Applications

    E-Print Network [OSTI]

    Kang, Chris Byung-hwa

    2013-01-01T23:59:59.000Z

    Biomaterials, Ceramics, and Semiconductors. Science, 277,I. Nanostructured Semiconductors Templated by Cholesteryl-Nanostructured Semiconductor. J. Am. Chem. Soc. , 127,

  17. A Novel Class of High-TC Ferromagnetic Semiconductors

    E-Print Network [OSTI]

    Shlyk, L. V.

    2008-01-01T23:59:59.000Z

    Diluted magnetic semiconductor or clustering effect? ,ferromagnetism in semiconductors, J. Appl. Phys. , inMaking nonmagnetic semiconductors ferromagnetic, Science,

  18. Magnetization dynamics and spin diffusion in semiconductors and metals

    E-Print Network [OSTI]

    Cywi?ski, ?ukasz

    2007-01-01T23:59:59.000Z

    to (III,Mn)V ferromagnetic semiconductors . . . . . . . . .semiconductors . . . . . . . . . . . . . . . . . .Spin di?usion in semiconductors and metals: a general

  19. Semiconductor radiation detector

    DOE Patents [OSTI]

    Patt, Bradley E. (Sherman Oaks, CA); Iwanczyk, Jan S. (Los Angeles, CA); Tull, Carolyn R. (Orinda, CA); Vilkelis, Gintas (Westlake Village, CA)

    2002-01-01T23:59:59.000Z

    A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

  20. Organic photosensitive cells grown on rough electrode with nano-scale morphology control

    DOE Patents [OSTI]

    Yang, Fan (Piscataway, NJ); Forrest, Stephen R. (Ann Arbor, MI)

    2011-06-07T23:59:59.000Z

    An optoelectronic device and a method for fabricating the optoelectronic device includes a first electrode disposed on a substrate, an exposed surface of the first electrode having a root mean square roughness of at least 30 nm and a height variation of at least 200 nm, the first electrode being transparent. A conformal layer of a first organic semiconductor material is deposited onto the first electrode by organic vapor phase deposition, the first organic semiconductor material being a small molecule material. A layer of a second organic semiconductor material is deposited over the conformal layer. At least some of the layer of the second organic semiconductor material directly contacts the conformal layer. A second electrode is deposited over the layer of the second organic semiconductor material. The first organic semiconductor material is of a donor-type or an acceptor-type relative to the second organic semiconductor material, which is of the other material type.

  1. WWW.MOTOROLA.COM/SEMICONDUCTORS Microcontrollers

    E-Print Network [OSTI]

    Song, Joe

    WWW.MOTOROLA.COM/SEMICONDUCTORS M68HC11 Microcontrollers M68HC11RM/D Rev. 6, 4/2002 M68HC11 Reference Manual FreescaleSemiconductor,I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc... #12;FreescaleSemiconductor,I Freescale Semiconductor, Inc. For More

  2. Coherence and focusing properties of unstable resonator semiconductor lasers

    SciTech Connect (OSTI)

    Mittelstein, M.; Salzman, J.; Venkatesan, T.; Lang, R.; Yariv, A.

    1985-05-15T23:59:59.000Z

    The emission characteristics of unstable resonator semiconductor lasers were measured. The output of an 80-..mu..m-wide laser consists of a diverging beam with a virtual source 5 ..mu..m wide located 50 ..mu..m behind the laser facet. A high degree of spatial coherence of the laser output was measured, indicating single lateral mode operation for currents I< or approx. =3 I/sub th/.

  3. Semiconductor bridge, SCB, ignition of energetic materials

    SciTech Connect (OSTI)

    Bickes, R.W.; Grubelich, M.D.; Harris, S.M.; Merson, J.A.; Tarbell, W.W.

    1997-04-01T23:59:59.000Z

    Sandia National Laboratories` semiconductor bridge, SCB, is now being used for the ignition or initiation of a wide variety of exeoergic materials. Applications of this new technology arose because of a need at the system level to provide light weight, small volume and low energy explosive assemblies. Conventional bridgewire devices could not meet the stringent size, weight and energy requirements of our customers. We present an overview of SCB technology and the ignition characteristics for a number of energetic materials including primary and secondary explosives, pyrotechnics, thermites and intermetallics. We provide examples of systems designed to meet the modern requirements that sophisticated systems must satisfy in today`s market environments.

  4. Semiconductor lasers with uniform longitudinal intensity distribution

    SciTech Connect (OSTI)

    Schrans, T.; Yariv, A. (Department of Applied Physics 128-95, California Institute of Technology, Pasadena, California 91125 (USA))

    1990-04-16T23:59:59.000Z

    Power-dependent nonuniform longitudinal intensity distribution leading to spectral and spatial instabilities is a major problem in semiconductor lasers. It is shown theoretically that a proper choice of the longitudinal distribution of the gain as well as that of the magnitude of the grating coupling coefficient will lead to a uniform intensity distribution in distributed feedback lasers. We also show that the widely used phase, rather than magnitude, control of the coupling coefficient cannot lead to a uniform intensity distribution when the facet reflectivities are zero.

  5. Method of passivating semiconductor surfaces

    DOE Patents [OSTI]

    Wanlass, Mark W. (Golden, CO)

    1990-01-01T23:59:59.000Z

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  6. Sandia National Laboratories: compound semiconductor

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    compound semiconductor Sandia and EMCORE: Solar Photovoltaics, Fiber Optics, MODE, and Energy Efficiency On March 29, 2013, in Concentrating Solar Power, Energy, Partnership,...

  7. Method of passivating semiconductor surfaces

    DOE Patents [OSTI]

    Wanlass, M.W.

    1990-06-19T23:59:59.000Z

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  8. Noise and synamics in semiconductor lasers

    E-Print Network [OSTI]

    Rana, Farhan, 1971-

    2003-01-01T23:59:59.000Z

    In this thesis, theoretical and experimental work on the noise and dynamics in continuous wave and mode-locked semiconductor lasers is presented. The main focus is on semiconductor cascade lasers and semiconductor mode-locked ...

  9. Semiconductors: From Manipulated to Managed Trade

    E-Print Network [OSTI]

    Tyson, Laura D'Andrea; Yoffie, David B.

    1991-01-01T23:59:59.000Z

    o f the Japanese semiconductor industry is a sucecsslul aridcommodnv product Ol the semiconductor industry. They are afor maJtini: semiconductors: nc

  10. Electron vortices in semiconductors devicesa... Kamran Mohsenib

    E-Print Network [OSTI]

    Electron vortices in semiconductors devicesa... Kamran Mohsenib Aerospace Engineering Sciencies; published online 3 October 2005 The hydrodynamic model of electron transport in semiconductors is analyzed vorticity effects. Furthermore, conditions for observation of electron vortices in semiconductor devices

  11. Climate VISION: Private Sector Initiatives: Semiconductors

    Office of Scientific and Technical Information (OSTI)

    Agreements The U.S. semiconductor industry, represented by the members of the Environmental Protection Agency's PFC ReductionClimate Partnership for the Semiconductor...

  12. Climate VISION: Private Sector Initiatives: Semiconductors: Resources...

    Office of Scientific and Technical Information (OSTI)

    over 100 companies that account for more than 83% of U.S.-based semiconductor production. The SIA provides a forum for domestic semiconductor companies to work collectively...

  13. Characterization of Amorphous Zinc Tin Oxide Semiconductors....

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amorphous Zinc Tin Oxide Semiconductors. Characterization of Amorphous Zinc Tin Oxide Semiconductors. Abstract: Amorphous zinc tin oxide (ZTO) was investigated to determine the...

  14. Layered semiconductor neutron detectors

    DOE Patents [OSTI]

    Mao, Samuel S; Perry, Dale L

    2013-12-10T23:59:59.000Z

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  15. Graphene Produces More Efficient Charge Transport Inside an Organic

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Graphene Produces More Efficient Charge Transport Inside an Organic Semiconductor Graphene, a two dimensional semi-metal made of sp 2 hybridized carbon, is an outstanding material...

  16. Graphene Produces More Efficient Charge Transport Inside an Organic...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Graphene Produces More Efficient Charge Transport Inside an Organic Semiconductor Friday, January 30, 2015 Graphene, a two dimensional semi-metal made of sp2 hybridized carbon, is...

  17. Variable temperature semiconductor film deposition

    DOE Patents [OSTI]

    Li, Xiaonan (Golden, CO); Sheldon, Peter (Lakewood, CO)

    1998-01-01T23:59:59.000Z

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  18. Process for producing chalcogenide semiconductors

    DOE Patents [OSTI]

    Noufi, R.; Chen, Y.W.

    1985-04-30T23:59:59.000Z

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  19. Variable temperature semiconductor film deposition

    DOE Patents [OSTI]

    Li, X.; Sheldon, P.

    1998-01-27T23:59:59.000Z

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  20. Process for producing chalcogenide semiconductors

    DOE Patents [OSTI]

    Noufi, Rommel (Westminster, CO); Chen, Yih-Wen (Omaha, NE)

    1987-01-01T23:59:59.000Z

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  1. Physics with isotopically controlled semiconductors

    SciTech Connect (OSTI)

    Haller, E. E., E-mail: eehaller@lbl.gov [University of California at Berkeley, Department of Materials Science and Engineering (United States)

    2010-07-15T23:59:59.000Z

    This paper is based on a tutorial presentation at the International Conference on Defects in Semiconductors (ICDS-25) held in Saint Petersburg, Russia in July 2009. The tutorial focused on a review of recent research involving isotopically controlled semiconductors. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, is the most prominent effect for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples.

  2. Wafer Fusion for Integration of Semiconductor Materials and Devices

    SciTech Connect (OSTI)

    Choquette, K.D.; Geib, K.M.; Hou, H.Q.; Allerman, A.A.; Kravitz, S.; Follstaedt, D.M.; Hindi, J.J.

    1999-05-01T23:59:59.000Z

    We have developed a wafer fusion technology to achieve integration of semiconductor materials and heterostructures with widely disparate lattice parameters, electronic properties, and/or optical properties for novel devices not now possible on any one substrate. Using our simple fusion process which uses low temperature (400-600 C) anneals in inert N{sub 2} gas, we have extended the scope of this technology to examine hybrid integration of dissimilar device technologies. As a specific example, we demonstrate wafer bonding vertical cavity surface emitting lasers (VCSELs) to transparent AlGaAs and GaP substrates to fabricate bottom-emitting short wavelength VCSELs. As a baseline fabrication technology applicable to many semiconductor systems, wafer fusion will revolutionize the way we think about possible semiconductor devices, and enable novel device configurations not possible by epitaxial growth.

  3. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    DOE Patents [OSTI]

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25T23:59:59.000Z

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  4. Semiconductor Bridge Cable Test

    SciTech Connect (OSTI)

    KING, TONY L.

    2002-01-01T23:59:59.000Z

    The semiconductor bridge (SCB) is an electroexplosive device used to initiate detonators. A C cable is commonly used to connect the SCB to a firing set. A series of tests were performed to identify smaller, lighter cables for firing single and multiple SCBs. This report provides a description of these tests and their results. It was demonstrated that lower threshold voltages and faster firing times can be achieved by increasing the wire size, which reduces ohmic losses. The RF 100 appears to be a reasonable substitute for C cable when firing single SCBs. This would reduce the cable volume by 68% and the weight by 67% while increasing the threshold voltage by only 22%. In general, RG 58 outperforms twisted pair when firing multiple SCBs in parallel. The RG 58's superior performance is attributed to its larger conductor size.

  5. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12T23:59:59.000Z

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  6. Mathematical Modeling of Semiconductor Devices

    E-Print Network [OSTI]

    Jngel, Ansgar

    fibers. Optoelectronic emitters convert an electronic signal into light. Examples are light-emitting diodes (LED) used in displays and indication lambs and semiconductor lasers used in compact disk systems

  7. Modeling the semiconductor industry dynamics

    E-Print Network [OSTI]

    Wu, Kailiang

    2008-01-01T23:59:59.000Z

    The semiconductor industry is an exciting and challenging industry. Strong demand at the application end, plus the high capital intensity and rapid technological innovation in manufacturing, makes it difficult to manage ...

  8. Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

    DOE Patents [OSTI]

    Rogers, John A. (Champaign, IL); Meitl, Matthew (Raleigh, NC); Sun, Yugang (Naperville, IL); Ko, Heung Cho (Urbana, IL); Carlson, Andrew (Urbana, IL); Choi, Won Mook (Champaign, IL); Stoykovich, Mark (Dover, NH); Jiang, Hanqing (Urbana, IL); Huang, Yonggang (Glencoe, IL); Nuzzo, Ralph G. (Champaign, IL); Lee, Keon Jae (Tokyo, JP); Zhu, Zhengtao (Rapid City, SD); Menard, Etienne (Durham, NC); Khang, Dahl-Young (Seoul, KR); Kan, Seong Jun (Daejeon, KR); Ahn, Jong Hyun (Suwon, KR); Kim, Hoon-sik (Champaign, IL)

    2012-07-10T23:59:59.000Z

    In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  9. Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

    DOE Patents [OSTI]

    Rogers, John A; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young

    2014-05-20T23:59:59.000Z

    In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  10. Hydrogen local vibrational modes in semiconductors

    SciTech Connect (OSTI)

    McCluskey, M D [Univ. of California, Berkeley, CA (United States). Dept. of Physics

    1997-06-01T23:59:59.000Z

    Following, a review of experimental techniques, theory, and previous work, the results of local vibrational mode (LVM) spectroscopy on hydrogen-related complexes in several different semiconductors are discussed. Hydrogen is introduced either by annealing in a hydrogen ambient. exposure to a hydrogen plasma, or during growth. The hydrogen passivates donors and acceptors in semiconductors, forming neutral complexes. When deuterium is substituted for hydrogen. the frequency of the LVM decreases by approximately the square root of two. By varying the temperature and pressure of the samples, the microscopic structures of hydrogen-related complexes are determined. For group II acceptor-hydrogen complexes in GaAs, InP, and GaP, hydrogen binds to the host anion in a bond-centered orientation, along the [111] direction, adjacent to the acceptor. The temperature dependent shift of the LVMs are proportional to the lattice thermal energy U(T), a consequence of anharmonic coupling between the LVM and acoustical phonons. In the wide band gap semiconductor ZnSe, epilayers grown by metalorganic chemical vapor phase epitaxy (MOCVD) and doped with As form As-H complexes. The hydrogen assumes a bond-centered orientation, adjacent to a host Zn. In AlSb, the DX centers Se and Te are passivated by hydrogen. The second, third, and fourth harmonics of the wag modes are observed. Although the Se-D complex has only one stretch mode, the Se-H stretch mode splits into three peaks. The anomalous splitting is explained by a new interaction between the stretch LVM and multi-phonon modes of the lattice. As the temperature or pressure is varied, and anti-crossing is observed between LVM and phonon modes.

  11. Universal alignment of hydrogen levels in semiconductors and insulators

    E-Print Network [OSTI]

    Van de Walle, C G

    2006-01-01T23:59:59.000Z

    including nitride semiconductors and transparent oxides.and C. G. Van de Walle, in Hydrogen in SemiconductorsII, Semiconductors and Semimetals Vol. 61, edited by N. H.

  12. Identifying semiconductors by d.c. ionization conductivity

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    expected from high-Z semiconductor detectors? , IEEE Transand binary compound semiconductors and insulators, J PhysIdentifying Semiconductors by D.C. Ionization Conductivity

  13. Nitride semiconductor Surface and interface characterization and device design

    E-Print Network [OSTI]

    Zhang, Hongtao

    2006-01-01T23:59:59.000Z

    Lett. 80 , D. Schroder, Semiconductor Material and Devicein III-V Nitride Semiconductors: Applications and Devices ,SAN DIEGO Nitride Semiconductor Surface and Interface

  14. Semiconductor Quantum Rods as Single Molecule Fluorescent Biological Labels

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    Alivisatos, A.P. Semiconductor nanocrystas for biologicalemission from colloidal semiconductor quantum rods. ScienceLight amplification in semiconductor nanocrystals: Quantum

  15. Enhanced Semiconductor Nanocrystal Conductance via Solution Grown Contacts

    E-Print Network [OSTI]

    Sheldon, Matthew T.

    2010-01-01T23:59:59.000Z

    G. ; Avouris, P. , Metal-semiconductor nanocontacts: SiliconIndividual Colloidal Semiconductor Nanorods. Nano Lett 2008,Physical Chemistry of Semiconductor Nanocrystals. J. Phys.

  16. Isovalent Anion Substitution in Ga-Mn-pnictide Ferromagnetic Semiconductors

    E-Print Network [OSTI]

    Stone, Peter

    2010-01-01T23:59:59.000Z

    63. O. Madelung, Semiconductors - Basic Data, 2nd Ed. (in Laser Annealing of Semiconductors, edited by J. M. PoateProperties of Semiconductors ("Atom" Publ. House, Moscow,

  17. Diffraction coupled phase-locked semiconductor laser array

    SciTech Connect (OSTI)

    Katz, J.; Margalit, S.; Yariv, A.

    1983-04-01T23:59:59.000Z

    A new monolithic, diffraction coupled phase-locked semiconductor laser array has been fabricated. Stable narrow far-field patterns (approx.3/sup 0/) and peak power levels of 1 W have been obtained for 100-..mu..m-wide devices with threshold currents as low as 250 mA. Such devices may be useful in applications where high power levels and stable radiation patterns are needed.

  18. Method of photocatalytic conversion of C-H organics

    DOE Patents [OSTI]

    Camaioni, Donald M. (Richland, WA); Lilga, Michael A. (Richland, WA)

    1998-01-01T23:59:59.000Z

    The present invention is the addition of a semiconductor material and energy to the reaction mixture of organic, acid (for example, trifluoroacetate), and oxygen. A transition metal ion may be added to the reaction mixture. The semiconductor material converts energy to oxidants thereby promoting oxidation of the organic. Alternatively, using metal in combination with exposure to light may be used.

  19. Method of photocatalytic conversion of C-H organics

    DOE Patents [OSTI]

    Camaioni, D.M.; Lilga, M.A.

    1998-01-13T23:59:59.000Z

    The present invention is the addition of a semiconductor material and energy to the reaction mixture of organic, acid (for example, trifluoroacetate), and oxygen. A transition metal ion may be added to the reaction mixture. The semiconductor material converts energy to oxidants thereby promoting oxidation of the organic. Alternatively, using metal in combination with exposure to light may be used.

  20. Impurity gettering in semiconductors

    DOE Patents [OSTI]

    Sopori, B.L.

    1995-06-20T23:59:59.000Z

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device is disclosed. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500 C to about 700 C for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal. 1 fig.

  1. Impurity gettering in semiconductors

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO)

    1995-01-01T23:59:59.000Z

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  2. Linear tailored gain broad area semiconductor lasers

    SciTech Connect (OSTI)

    Lindsey, C.P.; Mehuys, D.; Yariv, A.

    1987-06-01T23:59:59.000Z

    Tailored gain semiconductor lasers capable of high-power operation with single-lobed, nearly diffraction limited beamwidths only a few degrees wide have been demonstrated in proton implanted chirped arrays and ''halftone'' broad area lasers. The authors analyze lasers with a linear gain gradient, and obtain analytic approximations for their unsaturated optical eigenmodes. Unlike a uniform array, the fundamental mode of a linear tailored gain laser is the mode at threshold. Mode discrimination may be controlled by lasing the spatial gain gradient. All modes of asymmetric tailored gain waveguides have single-lobed far-field patterns offset from 0/sup 0/. Finally, they utilize tailored gain broad area lasers to make a measurement of the antiguiding parameter, and find b = 2.5 +- 0.5, in agreement with previous results.

  3. White organic light-emitting diodes: Status and perspective

    E-Print Network [OSTI]

    Reineke, Sebastian

    White organic light-emitting diodes (OLEDs) are ultrathin, large-area light sources made from organic semiconductor materials. Over the past decades, much research has been spent on finding suitable materials to realize ...

  4. ECE 344--Semiconductor Devices & Materials ECE Department, UMass Amherst

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    1 Syllabus ECE 344--Semiconductor Devices & Materials ECE Department, UMass Amherst Fall 2013 transport in semiconductors Explain the operating principles in semiconductor devices (diodes, capacitors Topics: Fundamentals of Semiconductors; Theory of Electrical Conduction; Device Operations (See "Class

  5. ECE 609 Semiconductor Devices Department of Electrical and Computer Engineering

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    ECE 609 Semiconductor Devices Department of Electrical and Computer Engineering University of semiconductor electronic devices in terms of material properties, interface and junction characteristics). ________________________________________________________________________ Preliminary Course Outline 1. Overview of Semiconductor Physics 1.1 Semiconductor Materials

  6. ECE 609 Semiconductor Devices Department of Electrical and Computer Engineering

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    ECE 609 Semiconductor Devices Department of Electrical and Computer Engineering University. ________________________________________________________________________ Preliminary Course Outline 1. Overview of Semiconductor Physics 1.1 Semiconductor Materials-V Characteristics, Nonideal Behavior) 2.2 Metal Semiconductor Junctions (Schottky Barriers, Ohmic Contacts) 2

  7. Sintered molybdenum for a metallized ceramic substrate packaging for the wide-

    E-Print Network [OSTI]

    Boyer, Edmond

    ; molybdenum; Spark Plasma Sintering I. INTRODUCTION Wide-bandgap semiconductors devices, such as silicon nitride (AlN) and molybdenum (Mo) is reported in this paper. This substrate is built using a spark plasmaSintered molybdenum for a metallized ceramic substrate packaging for the wide- bandgap devices

  8. Correlated exciton dynamics in semiconductor nanostructures

    E-Print Network [OSTI]

    Wen, Patrick, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    The absorption and dissipation of energy in semiconductor nanostructures are often determined by excited electron dynamics. In semiconductors, one fundamentally important electronic state is an exciton, an excited electron ...

  9. Method of preparing nitrogen containing semiconductor material

    DOE Patents [OSTI]

    Barber, Greg D.; Kurtz, Sarah R.

    2004-09-07T23:59:59.000Z

    A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.

  10. Disordered electronic and magnetic systems - transition metal (Mn) and rare earth (Gd) doped amorphous group IV semiconductors (C, Si, Ge)

    E-Print Network [OSTI]

    Zeng, Li

    2007-01-01T23:59:59.000Z

    1.1 Magnetic Semiconductors . . . . . . . . . . . . . . .Semiconductors . . . . . . . . . . . . . . . . . . . 1.3in Semiconductors . . . . . . . . . . . . . . . . . . 1.3.5

  11. Semiconductor electrode with improved photostability characteristics

    DOE Patents [OSTI]

    Frank, A.J.

    1985-02-19T23:59:59.000Z

    An electrode is described for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode consists of a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  12. Semiconductor nanocrystal-based phagokinetic tracking

    DOE Patents [OSTI]

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18T23:59:59.000Z

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  13. Review: Semiconductor Quantum Light Sources

    E-Print Network [OSTI]

    Andrew J Shields

    2007-04-03T23:59:59.000Z

    Lasers and LEDs display a statistical distribution in the number of photons emitted in a given time interval. New applications exploiting the quantum properties of light require sources for which either individual photons, or pairs, are generated in a regulated stream. Here we review recent research on single-photon sources based on the emission of a single semiconductor quantum dot. In just a few years remarkable progress has been made in generating indistinguishable single-photons and entangled photon pairs using such structures. It suggests it may be possible to realise compact, robust, LED-like semiconductor devices for quantum light generation.

  14. Semiconductor films on flexible iridium substrates

    DOE Patents [OSTI]

    Goyal, Amit

    2005-03-29T23:59:59.000Z

    A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

  15. Multi-phonon-assisted absorption and emission in semiconductors and its potential for laser refrigeration

    E-Print Network [OSTI]

    Khurgin, Jacob B

    2014-01-01T23:59:59.000Z

    Laser cooling of semiconductors has been an elusive goal for many years, and while attempts to cool the narrow gap semiconductors such as GaAs are yet to succeed, recently, net cooling has been attained in a wider gap CdS. This raises the question of whether wider gap semiconductors with higher phonon energies and stronger electron-phonon coupling are better suitable for laser cooling. In this work we develop a straightforward theory of phonon-assisted absorption and photoluminescence of semiconductors that involves more than one phonon and use to examine wide gap materials, such as GaN and CdS and compare them with GaAs. The results indicate that while strong electron-phonon coupling in both GaN and CdS definitely improves the prospects of laser cooling, large phonon energy in GaN may be a limitation, which makes CdS a better prospect for laser cooling.

  16. Multi-phonon-assisted absorption and emission in semiconductors and its potential for laser refrigeration

    SciTech Connect (OSTI)

    Khurgin, Jacob B., E-mail: jakek@jhu.edu [Johns Hopkins University, Baltimore, Maryland 21208 (United States)

    2014-06-02T23:59:59.000Z

    Laser cooling of semiconductors has been an elusive goal for many years, and while attempts to cool the narrow gap semiconductors such as GaAs are yet to succeed, recently, net cooling has been attained in a wider gap CdS. This raises the question of whether wider gap semiconductors with higher phonon energies and stronger electron-phonon coupling are better suitable for laser cooling. In this work, we develop a straightforward theory of phonon-assisted absorption and photoluminescence of semiconductors that involves more than one phonon and use to examine wide gap materials, such as GaN and CdS and compare them with GaAs. The results indicate that while strong electron-phonon coupling in both GaN and CdS definitely improves the prospects of laser cooling, large phonon energy in GaN may be a limitation, which makes CdS a better prospect for laser cooling.

  17. Mechanical scriber for semiconductor devices

    DOE Patents [OSTI]

    Lin, P.T.

    1985-03-05T23:59:59.000Z

    A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer. 5 figs.

  18. Mechanical scriber for semiconductor devices

    DOE Patents [OSTI]

    Lin, Peter T. (East Brunswick, NJ)

    1985-01-01T23:59:59.000Z

    A mechanical scriber using a scribing tip, such as a diamond, provides controlled scriber forces with a spring-loaded compound lever arrangement. The scribing force and range of scribing depth are adjusted by a pair of adjustable micrometer heads. A semiconductor device, such as a multilayer solar cell, can be formed into scribed strips at each layer.

  19. Wide Blue Sky

    E-Print Network [OSTI]

    Collins, Caroline Imani

    2011-01-01T23:59:59.000Z

    dressed neatly in a dark blue dress, its high neck trimmedIt was covered in a light blue fabric embellished with softOF CALIFORNIA RIVERSIDE Wide Blue Sky A Thesis submitted in

  20. Controlled growth of semiconductor crystals

    DOE Patents [OSTI]

    Bourret-Courchesne, E.D.

    1992-07-21T23:59:59.000Z

    A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

  1. Controlled growth of semiconductor crystals

    DOE Patents [OSTI]

    Bourret-Courchesne, Edith D. (Richmond, CA)

    1992-01-01T23:59:59.000Z

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  2. Back-side readout semiconductor photomultiplier

    DOE Patents [OSTI]

    Choong, Woon-Seng; Holland, Stephen E

    2014-05-20T23:59:59.000Z

    This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

  3. Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

    SciTech Connect (OSTI)

    Uddin, M. R.; Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X., E-mail: hx.jiang@ttu.edu [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409 (United States); Ziemer, K. S. [Department of Chemical Engineering, Northeastern University, Boston, MA 02115 (United States)

    2014-08-15T23:59:59.000Z

    The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BN)C, offer the unique abilities of bandgap engineering (from 0 for graphite to ?6.4 eV for h-BN) and electrical conductivity control (from semi-metal for graphite to insulator for undoped h-BN) through alloying and have the potential to complement III-nitride wide bandgap semiconductors and carbon based nanostructured materials. Epilayers of (BN)-rich h-(BN){sub 1-x}(C{sub 2}){sub x} alloys were synthesized by metal-organic chemical vapor deposition (MOCVD) on (0001) sapphire substrates. Hall-effect measurements revealed that homogeneous (BN)-rich h-(BN){sub 1-x}(C{sub 2}){sub x} alloys are naturally n-type. For alloys with x = 0.032, an electron mobility of about 20 cm{sup 2}/Vs at 650?K was measured. X-ray photoelectron spectroscopy (XPS) was used to determine the chemical composition and analyze chemical bonding states. Both composition and chemical bonding analysis confirm the formation of alloys. XPS results indicate that the carbon concentration in the alloys increases almost linearly with the flow rate of the carbon precursor (propane (C{sub 3}H{sub 8})) employed during the epilayer growth. XPS chemical bonding analysis showed that these MOCVD grown alloys possess more C-N bonds than C-B bonds, which possibly renders the undoped h-(BN){sub 1-x}(C{sub 2}){sub x} alloys n-type and corroborates the Hall-effect measurement results.

  4. PHYSICAL REVIEW B 90, 115415 (2014) Geometrically induced transitions between semimetal and semiconductor in graphene

    E-Print Network [OSTI]

    Wu, Zhigang

    and semiconductor in graphene Marc Dvorak and Zhigang Wu* Department of Physics, Colorado School of Mines, Golden of graphene remains an outstanding problem in nanoscience, which precludes the practical method of patterning graphene from being widely adopted for making graphene-based electronic and optoelectronic devices, because

  5. Nonadiabatic electron transfer at the nanoscale tin-oxide semiconductor/aqueous solution interface

    E-Print Network [OSTI]

    published as an Advance Article on the web 28th January 2004 Photo-excitation of chromophoric metal forward and back electron transfer reactions involving molecular dyes and wide bandgap semiconductors words, electro- nic coupling rather than nuclear motion appears to govern the reaction dynamics

  6. Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm

    SciTech Connect (OSTI)

    Zvonkov, N B; Ershov, A V; Zvonkov, B N; Maksimov, G A; Uskova, E A [Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod (Russian Federation); Akhlestina, S A [Research Insitute of Chemistry, N.I. Lobachevskii Nizhnii Novgorod State University, Nizhnii Novgorod (Russian Federation)

    1999-03-31T23:59:59.000Z

    InGaP/GaAs/InGaAs semiconductor lasers with broad tunnel-coupled waveguides were developed and investigated experimentally. Output radiation power of 5.2 - 5.8 W was obtained from an emitting region 100 {mu}m wide with a 36{sup 0} divergence of the emitted radiation in a plane perpendicular to the p - n junction. (lasers)

  7. Wide Angle Compton Scattering

    E-Print Network [OSTI]

    Rainer Jakob

    2000-10-16T23:59:59.000Z

    We present the handbag contribution to Wide Angle Compton Scattering (WACS) at moderately large momentum transfer obtained with a proton distribution amplitude close to the asymptotic form. In comparison it is found to be significantly larger than results from the hard scattering (pQCD) approach.

  8. Lateral coupled cavity semiconductor laser

    SciTech Connect (OSTI)

    Salzman, J.; Lang, R.; Yariv, A.

    1985-08-01T23:59:59.000Z

    We report the fabrication and operation of a lateral coupled cavity semiconductor laser that consists of two phase-locked parallel lasers of different lengths and with separate electrical contacts. Mode selectivity that results from the interaction between the two supermodes is investigated experimentally. Frequency selectivity and tunability are obtained by controlling the current to each laser separately. Highly stable single mode operation is also demonstrated.

  9. Compound semiconductor optical waveguide switch

    DOE Patents [OSTI]

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10T23:59:59.000Z

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  10. Routing for analog chip design at NXP semiconductors

    E-Print Network [OSTI]

    Utrecht, Universiteit

    Routing for analog chip design at NXP semiconductors Marjan van den Akker Theo Beelen Rob H.O. Box 80.089 3508 TB Utrecht The Netherlands #12;Routing for analog chip designs at NXP Semiconductors.1 NXP Semiconductors NXP Semiconductors N.V. (Nasdaq: NXPI) is a global semiconductor company and a long

  11. Fundamental lateral mode oscillation via gain tailoring in broad area semiconductor lasers

    SciTech Connect (OSTI)

    Lindsey, C.; Derry, P.; Yariv, A.

    1985-09-15T23:59:59.000Z

    We show that by employing gain tailoring in a broad area semiconductor laser we achieve fundamental lateral mode operation with a diffraction-limited single-lobed far-field pattern. We demonstrate a tailored gain broad area laser 60 ..mu..m wide which emits 450 mW per mirror into a stable, single-lobed far-field pattern 3 1/2/sup 0/ wide at 5.3 I/sub th/.

  12. Optical devices featuring textured semiconductor layers

    DOE Patents [OSTI]

    Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

    2012-08-07T23:59:59.000Z

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  13. Optical devices featuring textured semiconductor layers

    DOE Patents [OSTI]

    Moustakas, Theodore D. (Dover, MA); Cabalu, Jasper S. (Cary, NC)

    2011-10-11T23:59:59.000Z

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  14. Phase-locked semiconductor laser array with separate contacts

    SciTech Connect (OSTI)

    Katz, J.; Kapon, E.; Lindsey, C.; Margalit, S.; Shreter, U.; Yariv, A.

    1983-09-15T23:59:59.000Z

    A new monolithic phase-locked semiconductor laser array has been fabricated. Employing two-level metallization, each of the eight elements in the array has a separate contact, thus making it possible to compensate for device nonuniformities and control the near-field and far-field patterns. Threshold currents are approximately 60 mA for each 5-..mu..m-wide laser in the array. Phase locking has been observed via the narrowing of the far-field pattern. Experimental results are compared to those obtained from the same arrays operated with all the lasers connected in parallel.

  15. Optical Nonlinearities and Ultrafast Carrier Dynamics in Semiconductor Quantum Dots

    SciTech Connect (OSTI)

    Klimov, V.; McBranch, D.; Schwarz, C.

    1998-08-10T23:59:59.000Z

    Low-dimensional semiconductors have attracted great interest due to the potential for tailoring their linear and nonlinear optical properties over a wide-range. Semiconductor nanocrystals (NC's) represent a class of quasi-zero-dimensional objects or quantum dots. Due to quantum cordhement and a large surface-to-volume ratio, the linear and nonlinear optical properties, and the carrier dynamics in NC's are significantly different horn those in bulk materials. napping at surface states can lead to a fast depopulation of quantized states, accompanied by charge separation and generation of local fields which significantly modifies the nonlinear optical response in NC's. 3D carrier confinement also has a drastic effect on the energy relaxation dynamics. In strongly confined NC's, the energy-level spacing can greatly exceed typical phonon energies. This has been expected to significantly inhibit phonon-related mechanisms for energy losses, an effect referred to as a phonon bottleneck. It has been suggested recently that the phonon bottleneck in 3D-confined systems can be removed due to enhanced role of Auger-type interactions. In this paper we report femtosecond (fs) studies of ultrafast optical nonlinearities, and energy relaxation and trap ping dynamics in three types of quantum-dot systems: semiconductor NC/glass composites made by high temperature precipitation, ion-implanted NC's, and colloidal NC'S. Comparison of ultrafast data for different samples allows us to separate effects being intrinsic to quantum dots from those related to lattice imperfections and interface properties.

  16. Reflection technique for thermal mapping of semiconductors

    DOE Patents [OSTI]

    Walter, Martin J. (Lee, NY)

    1989-06-20T23:59:59.000Z

    Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

  17. Low Energy Ion Implantationin Semiconductor Manufacturing | U...

    Office of Science (SC) Website

    Low Energy Ion Implantation in Semiconductor Manufacturing Nuclear Physics (NP) NP Home About Research Facilities Science Highlights Benefits of NP Applications of Nuclear Science...

  18. Climate VISION: Private Sector Initiatives: Semiconductors: Work...

    Office of Scientific and Technical Information (OSTI)

    of EPA. The plan describes actions the industry intends to take to achieve its Climate VISION goal by 2010. Read the Semiconductor Industry Association Work Plan (PDF 94...

  19. Climate VISION: Private Sector Initiatives: Semiconductors: Resources...

    Office of Scientific and Technical Information (OSTI)

    to reduce high global warming potential (GWP) greenhouse gas emissions by following a pollution prevention strategy. Today, nearly 80 percent of U.S. semiconductor manufacturers...

  20. Isovalent Anion Substitution in Ga-Mn-pnictide Ferromagnetic Semiconductors

    E-Print Network [OSTI]

    Stone, Peter

    2010-01-01T23:59:59.000Z

    a so-called diluted magnetic semiconductor (DMS). DMSs arein heavily doped magnetic semiconductors as the probabilitythis method to magnetic semiconductors, the 66 kp matrix

  1. Performance of Adaptive DualDropping ILUT Preconditioners in Semiconductor

    E-Print Network [OSTI]

    Zhang, Jun

    Performance of Adaptive DualDropping ILUT Preconditioners in Semiconductor Dopant Diffusion for iterative solution of sparse linear systems arising in semiconductor dopant diffusion modeling resolution, timestep in the adaptive ODE integrator and the problem physics. Key words: semiconductor TCAD

  2. OPTI 240: Semiconductor Physics and Lasers Instructor: Mahmoud Fallahi

    E-Print Network [OSTI]

    Arizona, University of

    OPTI 240: Semiconductor Physics and Lasers Instructor: Mahmoud Fallahi fallahi@optics.arizona.edu Spring Semester Introduction to Semiconductor Optoelectronic Introduction to quantum mechanics: Energy exclusion principle Metal, Insulator, Semiconductor Conduction band, valance band, energy gap Electrons

  3. Semiconductor Capabilities in the U.S. and Industrializing Asia

    E-Print Network [OSTI]

    Brown, Clair; Linden, Greg

    2008-01-01T23:59:59.000Z

    data. Table 2: U.S. Semiconductor Engineers By Location,medium-sized U.S. semiconductor companies, which togetherto represent all U.S. semiconductor firms. The total

  4. Implications of mercury interactions with band-gap semiconductor oxides

    SciTech Connect (OSTI)

    Granite, E.J.; King, W.P.; Stanko, D.C.; Pennline, H.W.

    2008-09-01T23:59:59.000Z

    Titanium dioxide is a well-known photooxidation catalyst. It will oxidize mercury in the presence of ultraviolet light from the sun and oxygen and/or moisture to form mercuric oxide. Several companies manufacture self-cleaning windows. These windows have a transparent coating of titanium dioxide. The titanium dioxide is capable of destroying organic contaminants in air in the presence of ultraviolet light from the sun, thereby keeping the windows clean. The commercially available self-cleaning windows were used to sequester mercury from oxygennitrogen mixtures. Samples of the self-cleaning glass were placed into specially designed photo-reactors in order to study the removal of elemental mercury from oxygennitrogen mixtures resembling air. The possibility of removing mercury from ambient air with a self-cleaning glass apparatus is examined. The intensity of 365-nm ultraviolet light was similar to the natural intensity from sunlight in the Pittsburgh region. Passive removal of mercury from the air may represent an option in lieu of, or in addition to, point source clean-up at combustion facilities. There are several common band-gap semiconductor oxide photocatalysts. Sunlight (both the ultraviolet and visible light components) and band-gap semiconductor particles may have a small impact on the global cycle of mercury in the environment. The potential environmental consequences of mercury interactions with band-gap semiconductor oxides are discussed. Heterogeneous photooxidation might impact the global transport of elemental mercury emanating from flue gases.

  5. PROTECTIVE SURFACE COATINGS ON SEMICONDUCTOR NUCLEAR RADIATION DETECTORS

    E-Print Network [OSTI]

    Hansen, W.L.

    2010-01-01T23:59:59.000Z

    ON SEMICONDUCTOR NUCLEAR RADIATION DETECTORS W. L. Hansen,COATINGS ON SEMICONDUCTOR NUCLEAR RADIATION DETECTORS* W. L.the use of germanium nuclear radiation detec tors, a new

  6. New ALS Technique Guides IBM in Next-Generation Semiconductor...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New ALS Technique Guides IBM in Next-Generation Semiconductor Development New ALS Technique Guides IBM in Next-Generation Semiconductor Development Print Wednesday, 21 January 2015...

  7. Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition and Remarkable Large Magnetism. Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition...

  8. Engineering Density of States of Earth Abundant Semiconductors...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of States of Earth Abundant Semiconductors for Enhanced Thermoelectric Power Factor Engineering Density of States of Earth Abundant Semiconductors for Enhanced Thermoelectric...

  9. advanced semiconductor manufacturing: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Websites Summary: Business and Manufacturing Tohru Ogawa Semiconductor Company Sony Corporation 12;WISE 2000 ContentsContents Paradigm Shift in Semiconductor Business...

  10. Optic probe for semiconductor characterization

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO); Hambarian, Artak (Yerevan, AM)

    2008-09-02T23:59:59.000Z

    Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

  11. Nonlinear Peltier effect in semiconductors Mona Zebarjadia

    E-Print Network [OSTI]

    Nonlinear Peltier effect in semiconductors Mona Zebarjadia Department of Electrical Engineering; published online 18 September 2007 Nonlinear Peltier coefficient of a doped InGaAs semiconductor is calculated numerically using the Monte Carlo technique. The Peltier coefficient is also obtained analytically

  12. Preparation of a semiconductor thin film

    DOE Patents [OSTI]

    Pehnt, M.; Schulz, D.L.; Curtis, C.J.; Ginley, D.S.

    1998-01-27T23:59:59.000Z

    A process is disclosed for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

  13. Ultra-high speed semiconductor lasers

    SciTech Connect (OSTI)

    Lau, K.Y.; Yariv, A.

    1985-02-01T23:59:59.000Z

    Recent progress on semiconductor lasers having a very high direct modulation bandwidth of beyond 10 GHz are described. Issues related to application of these lasers in actual systems are addressed. Possibilities of further extending the bandwidth of semiconductor lasers are examined.

  14. Preparation of a semiconductor thin film

    DOE Patents [OSTI]

    Pehnt, Martin (TuBingen, DE); Schulz, Douglas L. (Denver, CO); Curtis, Calvin J. (Lakewood, CO); Ginley, David S. (Evergreen, CO)

    1998-01-01T23:59:59.000Z

    A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

  15. Stable surface passivation process for compound semiconductors

    DOE Patents [OSTI]

    Ashby, Carol I. H. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.

  16. Hybrid anode for semiconductor radiation detectors

    DOE Patents [OSTI]

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19T23:59:59.000Z

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  17. Photosynthesis-inspired device architectures for organic photovoltaics

    E-Print Network [OSTI]

    Heidel, Timothy David

    2010-01-01T23:59:59.000Z

    Organic semiconductor photovoltaics offer a promising route to low-cost, scalable, emissions-free electricity generation. However, achieving higher power conversion efficiencies is critical before these devices can play a ...

  18. Novel patterning techniques for manufacturing organic and nanostructured electronics

    E-Print Network [OSTI]

    Chen, Jianglong, 1976-

    2007-01-01T23:59:59.000Z

    Molecular organic semiconductors and nanometer size particles are two new classes of functional materials allowing fabrication of electronic devices on low-cost and large area substrates. Patterning these electronic materials ...

  19. Semiconductor switch geometry with electric field shaping

    DOE Patents [OSTI]

    Booth, Rex (Livermore, CA); Pocha, Michael D. (Livermore, CA)

    1994-01-01T23:59:59.000Z

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

  20. Semiconductor switch geometry with electric field shaping

    DOE Patents [OSTI]

    Booth, R.; Pocha, M.D.

    1994-08-23T23:59:59.000Z

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

  1. Dynamics of excitons and charges in organic materials and semiconductor

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisitingContract ManagementDiscovering HowAnaDynamic Switching of the

  2. Organic Semiconductor Chemistry | MIT-Harvard Center for Excitonics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)IntegratedSpeeding access toTest andOptimize carbon dioxideCONTRACT AWARDSemiconductor

  3. Exploring Electron Transfer in Organic Semiconductors | MIT-Harvard Center

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental Assessments (EA) /EmailMolecular Solids1 BeamlineExplorefor

  4. Transport Equations for Semiconductors Prof. Dr. Ansgar Jungel

    E-Print Network [OSTI]

    Jngel, Ansgar

    - cations have been invented; for instance, semiconductor lasers, solar cells, light-emitting diodes (LED

  5. Kinetic and Macroscopic Models for Semiconductors Ansgar Jungel

    E-Print Network [OSTI]

    Jngel, Ansgar

    Kinetic and Macroscopic Models for Semiconductors Ansgar Jungel Vienna University of Technology, Austria www.jungel.at.vu Ansgar Jungel (TU Wien) Kinetic Semiconductor Models www.jungel.at.vu 1 / 165 #12;Contents 1 Introduction 2 Semiconductor modeling Basics of semiconductor physics Kinetic models 3

  6. EEE 6397 Semiconductor Device Theory (Fall, 2014, 5th

    E-Print Network [OSTI]

    Fang, Yuguang "Michael"

    1 EEE 6397 Semiconductor Device Theory (Fall, 2014, 5th period MWF, BEN328) Goals: (1) Develop fundamental understanding on the device physics of the most important semiconductor devices, such as PN junctions, metal-semiconductor contacts, metal-oxide-semiconductor capacitors, and field-effect transistors

  7. Recent progress in degradation and stabilization of organic solar cells

    SciTech Connect (OSTI)

    Cao, Huanqi; He, Weidong; Mao, Yiwu; Lin, Xiao; Ishikawa, Ken; Dickerson, James H.; Hess, Wayne P.

    2014-10-15T23:59:59.000Z

    Stability is of paramount importance in organic semiconductor devices, especially in organic solar cells (OSCs). Serious degradation in air limits wide applications of these flexible, light-weight and low-cost power-generation devices. Studying the stability of organic solar cells will help us understand degradation mechanisms and further improve the stability of these devices. There are many investigations into the efficiency and stability of OSCs. The efficiency and stability of devices even of the same photoactive materials are scattered in different papers. In particular, the extrinsic degradation that mainly occurs near the interface between the organic layer and the cathode is a major stability concern. In the past few years, researchers have developed many new cathodes and cathode buffer layers, some of which have astonishingly improved the stability of OSCs. In this review article, we discuss the recent developments of these materials and summarize recent progresses in the study of the degradation/stability of OSCs, with emphasis on the extrinsic degradation/stability that is related to the intrusion of oxygen and water. The review provides detailed insight into the current status of research on the stability of OSCs and seeks to facilitate the development of highly-efficient OSCs with enhanced stability.

  8. Heating device for semiconductor wafers

    DOE Patents [OSTI]

    Vosen, S.R.

    1999-07-27T23:59:59.000Z

    An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernible pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light. 4 figs.

  9. Heating device for semiconductor wafers

    DOE Patents [OSTI]

    Vosen, Steven R. (Berkeley, CA)

    1999-01-01T23:59:59.000Z

    An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

  10. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    DOE Patents [OSTI]

    Yang, Peidong (El Cerrito, CA); Choi, Heonjin (Seoul, KR); Lee, Sangkwon (Daejeon, KR); He, Rongrui (Albany, CA); Zhang, Yanfeng (El Cerrito, CA); Kuykendal, Tevye (Berkeley, CA); Pauzauskie, Peter (Berkeley, CA)

    2011-08-23T23:59:59.000Z

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  11. Electrical Usage Characterization of Semiconductor Processing Tools

    E-Print Network [OSTI]

    Hinson, S. R.

    This paper presents the basic concepts in performing an energy and power audit of a semiconductor process tool. A protocol exists that fully describes these measurements and their use and applicability and it will be described. This protocol...

  12. NANOSTRUCTURES, MAGNETIC SEMICONDUCTORS AND SPINELECTRONICS Paata Kervalishvili

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    to data storage, switching, lighting and other devices, can lead to substantially new hardwareNANOSTRUCTURES, MAGNETIC SEMICONDUCTORS AND SPINELECTRONICS Paata Kervalishvili Georgian Technical and manipulation on a nanometre scale, which allows the fabrication of nanostructures with the properties mainly

  13. Narrow band gap amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.; Mahan, A.H.

    1985-01-10T23:59:59.000Z

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  14. Surface phonons of III-V semiconductors

    E-Print Network [OSTI]

    Das, Pradip Kumar

    1994-01-01T23:59:59.000Z

    are the simplest of all semiconductor surfaces. Their atomic relaxations and electronic surface states are rather well understood. There have, however, been surprisingly few experimental studies of their vibrational properties, and ours in the first detailed...

  15. Semiconductor-nanocrystal/conjugated polymer thin films

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Dittmer, Janke J. (Munich, DE); Huynh, Wendy U. (Munich, DE); Milliron, Delia (Berkeley, CA)

    2010-08-17T23:59:59.000Z

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  16. EXCITONIC EIGENSTATES OF DISORDERED SEMICONDUCTOR QUANTUM WIRES

    E-Print Network [OSTI]

    of semiconductors are exploited in solar cells, light emitting diodes, and lasers, and, furthermore, future UNIVERSITY OF MINNESOTA 400 Lind Hall 207 Church Street S.E. Minneapolis, Minnesota 554550436 Phone: 612

  17. Science and applications of infrared semiconductor nanocrystals

    E-Print Network [OSTI]

    Geyer, Scott Mitchell

    2010-01-01T23:59:59.000Z

    In this work we study several applications of semiconductor nanocrystals (NCs) with infrared band gaps. In the first half, we explore the physics of two systems with applications in NC based photovoltaics. The physics of ...

  18. Nanopatterned Electrically Conductive Films of Semiconductor Nanocrystals

    E-Print Network [OSTI]

    Mentzel, Tamar

    We present the first semiconductor nanocrystal films of nanoscale dimensions that are electrically conductive and crack-free. These films make it possible to study the electrical properties intrinsic to the nanocrystals ...

  19. Thermovoltaic semiconductor device including a plasma filter

    DOE Patents [OSTI]

    Baldasaro, Paul F. (Clifton Park, NY)

    1999-01-01T23:59:59.000Z

    A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

  20. Fabrication of Semiconductors by Wet Chemical Etch

    E-Print Network [OSTI]

    Francoviglia, Laura

    2008-07-01T23:59:59.000Z

    - ern devices. Beginning with Bardeen, Brittain and Shockleys invention of the transistor in Bell Labs in 1947 and Kilby and Noyces introduction of the integrated circuit about a decade later, semiconductor devices have dramat- ically advanced... ad- dition of impurities, their conductivity can be altered. With the need to manu- facture devices at the micro- and nano- scale, the semiconductor industry has followed Moores Law, the trend that the number of transistors placed...

  1. Optical temperature indicator using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, J.W.

    1995-01-01T23:59:59.000Z

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  2. A Semiconductor Microlaser for Intracavity Flow Cytometry

    SciTech Connect (OSTI)

    Akhil, O.; Copeland, G.C.; Dunne, J.L.; Gourley, P.L.; Hendricks, J.K.; McDonald, A.E.

    1999-01-20T23:59:59.000Z

    Semiconductor microlasers are attractive components for micro-analysis systems because of their ability to emit coherent intense light from a small aperture. By using a surface-emitting semiconductor geometry, we were able to incorporate fluid flow inside a laser microcavity for the first time. This confers significant advantages for high throughput screening of cells, particulates and fluid analytes in a sensitive microdevice. In this paper we discuss the intracavity microfluidics and present preliminary results with flowing blood and brain cells.

  3. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, James W. (Aiken, SC)

    1998-01-01T23:59:59.000Z

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card.

  4. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, James W. (108 Independent Blvd., Aiken, SC 29801)

    1996-01-01T23:59:59.000Z

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit.

  5. Optical devices featuring nonpolar textured semiconductor layers

    DOE Patents [OSTI]

    Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

    2013-11-26T23:59:59.000Z

    A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

  6. Optical temperature indicator using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, James W. (108 Independent Blvd., Aiken, SC 29801)

    1996-01-01T23:59:59.000Z

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  7. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, J.W.

    1996-08-20T23:59:59.000Z

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit. 7 figs.

  8. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, J.W.

    1998-06-30T23:59:59.000Z

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card. 8 figs.

  9. Goal is to further development and manufacturing of wide bandgap semiconductors

    E-Print Network [OSTI]

    Young, R. Michael

    technology. On Jan. 15, President Barack Obama announced that NC State would lead the Next Generation Power corrections to alumnianddonor_records@ncsu.edu; or call 919.515.7458, toll free: 866.316.4057. NC State

  10. Widely tunable mid-infrared generation via frequency conversion in semiconductor waveguides

    E-Print Network [OSTI]

    of mid-infrared and far-infrared (IR) radiation using second-order optical nonlinearities is attractive, large optical nonlinearities, large optical damage threshold, and mature fabrication tech- nology [3 Optical Society of America OCIS codes: (190.4975) Parametric processes; (230.4320) Nonlinear optical

  11. Opportunities for Wide Bandgap Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOrigin of Contamination in ManyDepartment ofOil'sEnergy 9Industrial Applications -

  12. Tuning the oxide/organic interface: Benzene on SnO2,,101... Matthias Batzill,a)

    E-Print Network [OSTI]

    Diebold, Ulrike

    Tuning the oxide/organic interface: Benzene on SnO2,,101... Matthias Batzill,a) Khabibulakh Katsiev,16 As a model molecule for simulating an organic semiconductor film benzene was chosen as a simple -conjugated

  13. Ultrafast Control of Magnetism in Ferromagnetic Semiconductors via Photoexcited Transient Carriers

    E-Print Network [OSTI]

    Cotoros, Ingrid A.

    2009-01-01T23:59:59.000Z

    1.2 Overview of semiconductor2.2 Dilute magnetic semiconductors . . . . . . . . .generated holes in (In,Mn)As Magnetic semiconductor FET

  14. Electron gas grid semiconductor radiation detectors

    DOE Patents [OSTI]

    Lee, Edwin Y. (Livermore, CA); James, Ralph B. (Livermore, CA)

    2002-01-01T23:59:59.000Z

    An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

  15. Spin Transport in Semiconductor heterostructures

    SciTech Connect (OSTI)

    Domnita Catalina Marinescu

    2011-02-22T23:59:59.000Z

    The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

  16. Dissipative chaos in semiconductor superlattices

    SciTech Connect (OSTI)

    Alekseev, K.N.; Berman, G.P. [Center for Nonlinear Studies and Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Center for Nonlinear Studies and Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); [Kirensky Institute of Physics, 660036, Krasnoyarsk (Russia); [Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080 (United States); Campbell, D.K.; Cannon, E.H.; Cargo, M.C. [Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080 (United States)] [Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080 (United States)

    1996-10-01T23:59:59.000Z

    We consider the motion of ballistic electrons in a miniband of a semiconductor superlattice (SSL) under the influence of an external, time-periodic electric field. We use a semiclassical, balance-equation approach, which incorporates elastic and inelastic scattering (as dissipation) and the self-consistent field generated by the electron motion. The coupling of electrons in the miniband to the self-consistent field produces a cooperative nonlinear oscillatory mode which, when interacting with the oscillatory external field and the intrinsic Bloch-type oscillatory mode, can lead to complicated dynamics, including dissipative chaos. For a range of values of the dissipation parameters we determine the regions in the amplitude-frequency plane of the external field in which chaos can occur. Our results suggest that for terahertz external fields of the amplitudes achieved by present-day free-electron lasers, chaos may be observable in SSL{close_quote}s. We clarify the nature of this interesting nonlinear dynamics in the superlattice{endash}external-field system by exploring analogies to the Dicke model of an ensemble of two-level atoms coupled with a resonant cavity field, and to Josephson junctions. {copyright} {ital 1996 The American Physical Society.}

  17. Photodeposition of Pt on Colloidal CdS and CdSe/CdS Semiconductor Nanostructures

    SciTech Connect (OSTI)

    Dukovic, Gordana; Merkle, Maxwell G.; Nelson, James H.; Hughes, Steven M.; Alivisatos, A. Paul

    2008-08-06T23:59:59.000Z

    Semiconductor photocatalysis has been identified as a promising avenue for the conversion of solar energy into environmentally friendly fuels, most notably by the production of hydrogen from water.[1-5] Nanometer-scale materials in particular have attracted considerable scientific attention as the building blocks for light-harvesting applications.[6,7] Their desirable attributes include tunability of the optical properties with size, amenability to relatively inexpensive low-temperature processing, and a high degree of synthetic sophistication leading to increasingly complex and multi-functional architectures. For photocatalysis in particular, the high surface-to-volume ratios in nanoscale materials should lead to an increased availability of carriers for redox reactions on the nanoparticle surface. Recombination of photoexcited carriers directly competes with photocatalytic activity.[3] Charge separation is often achieved with multi-component heterostructures. An early example is the case of TiO2 powders functionalized with Pt and RuO2 particles, where photoexcited electrons are transferred to Pt (the reduction site) and holes to RuO2 (the oxidation site).[8] More recently, many colloidally synthesized nanometer-scale metal-semiconductor heterostructures have been reported.[7,9,10] A majority of these structures are made by thermal methods.[7,10] We have chosen to study photochemical formation of metal-semiconductor heterostructures. The detailed understanding of the mechanisms involved in photodeposition of metals on nanometer-scale semiconductors is necessary to enable a high degree of synthetic control. At the same time, because the results of metal deposition can be directly observed by electron microscopy, it can be used to understand how factors such as nanocrystal composition, shape, carrier dynamics, and surface chemistry influence the photochemical properties of semiconductor nanocrystals. In this communication, we report on the photodeposition of Pt on colloidal CdS and CdSe/CdS core/shell nanocrystals. Among the II-VI semiconductors, CdS is of particular interest because it has the correct band alignment for water photolysis[2] and has been demonstrated to be photocatalytically active.[11-16] We have found that the photoexcitation of CdS and CdSe/CdS in the presence of an organometallic Pt precursor leads to deposition of Pt nanoparticles on the semiconductor surface. Stark differences are observed in the Pt nanoparticle location on the two substrates, and the photodeposition can be completely inhibited by the modification of the semiconductor surface. Our results suggest that tuning of the semiconductor band structure, spatial organization and surface chemistry should be crucial in the design of photocatalytic nanostructures.

  18. Megahertz organic/polymer diodes

    DOE Patents [OSTI]

    Katz, Howard Edan; Sun, Jia; Pal, Nath Bhola

    2012-12-11T23:59:59.000Z

    Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

  19. Method for removing semiconductor layers from salt substrates

    DOE Patents [OSTI]

    Shuskus, Alexander J. (West Hartford, CT); Cowher, Melvyn E. (East Brookfield, MA)

    1985-08-27T23:59:59.000Z

    A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

  20. Semiconductor nanowires for photovoltaic and photoelectrochemical energy conversion

    SciTech Connect (OSTI)

    Dasgupta, Neil; Yang, Peidong

    2013-01-23T23:59:59.000Z

    Semiconductor nanowires (NW) possess several beneficial properties for efficient conversion of solar energy into electricity and chemical energy. Due to their efficient absorption of light, short distances for minority carriers to travel, high surface-to-volume ratios, and the availability of scalable synthesis methods, they provide a pathway to address the low cost-to-power requirements for wide-scale adaptation of solar energy conversion technologies. Here we highlight recent progress in our group towards implementation of NW components as photovoltaic and photoelectrochemical energy conversion devices. An emphasis is placed on the unique properties of these one-dimensional (1D) structures, which enable the use of abundant, low-cost materials and improved energy conversion efficiency compared to bulk devices.

  1. Conductance matrix of multiterminal semiconductor devices with edge channels

    SciTech Connect (OSTI)

    Danilovskii, E. Yu., E-mail: danilovskii@mail.ioffe.ru; Bagraev, N. T. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2014-12-15T23:59:59.000Z

    A method for determining the conductance matrix of multiterminal semiconductor structures with edge channels is proposed. The method is based on the solution of a system of linear algebraic equations based on Kirchhoff equations, made up of potential differences U{sub ij} measured at stabilized currents I{sub kl}, where i, j, k, l are terminal numbers. The matrix obtained by solving the system of equations completely describes the structure under study, reflecting its configuration and homogeneity. This method can find wide application when using the known Landauer-Buttiker formalism to analyze carrier transport in the quantum Hall effect and quantum spin Hall effect modes. Within the proposed method, the contribution of the contact area resistances R{sub c} to the formation of conductance matrix elements is taken into account. The possibilities of practical application of the results obtained in developing analog cryptographic devices are considered.

  2. Freescale Semiconductor, Inc., 2004. All rights reserved. Freescale Semiconductor

    E-Print Network [OSTI]

    Moreno Maza, Marc

    a refrigerator to store the most commonly used items, and saves himself some trips to the supermarket. To increase his efficiency further, he organizes his products on the shelves of the refrigerator and creates a list of the items on hand and posts it on the refrigerator door. Now when an order comes in, he checks

  3. Ultra-narrow ferromagnetic resonance in organic-based thin films grown via low temperature chemical vapor deposition

    SciTech Connect (OSTI)

    Yu, H.; Harberts, M.; Adur, R.; Hammel, P. Chris; Johnston-Halperin, E., E-mail: ejh@physics.osu.edu, E-mail: epstein@physics.osu.edu [Department of Physics, The Ohio State University, Columbus, Ohio 43210-1117 (United States); Lu, Y. [Department of Chemistry, The Ohio State University, Columbus, Ohio 43210-1173 (United States); Epstein, A. J., E-mail: ejh@physics.osu.edu, E-mail: epstein@physics.osu.edu [Department of Physics, The Ohio State University, Columbus, Ohio 43210-1117 (United States); Department of Chemistry, The Ohio State University, Columbus, Ohio 43210-1173 (United States)

    2014-07-07T23:59:59.000Z

    We present the growth of thin films of the organic-based ferrimagnetic semiconductor V[TCNE]{sub x} (x???2, TCNE: tetracyanoethylene) via chemical vapor deposition. Under optimized growth conditions, we observe a significant increase in magnetic homogeneity, as evidenced by a Curie temperature above 600?K and sharp magnetization switching. Further, ferromagnetic resonance studies reveal a single resonance with full width at half maximum linewidth of 1.4?G, comparable to the narrowest lines measured in inorganic magnetic materials and in contrast to previous studies that showed multiple resonance features. These characteristics are promising for the development of high frequency electronic devices that take advantage of the unique properties of this organic-based material, such as the potential for low cost synthesis combined with low temperature and conformal deposition on a wide variety of substrates.

  4. Extracting hot carriers from photoexcited semiconductor nanocrystals

    SciTech Connect (OSTI)

    Zhu, Xiaoyang

    2014-12-10T23:59:59.000Z

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called Shockley-Queisser limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates hot charge carriers that quickly cool to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a phonon bottleneck wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  5. Light sources based on semiconductor current filaments

    DOE Patents [OSTI]

    Zutavern, Fred J. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Buttram, Malcolm T. (Sandia Park, NM); Mar, Alan (Albuquerque, NM); Helgeson, Wesley D. (Albuquerque, NM); O'Malley, Martin W. (Edgewood, NM); Hjalmarson, Harold P. (Albuquerque, NM); Baca, Albert G. (Albuquerque, NM); Chow, Weng W. (Cedar Crest, NM); Vawter, G. Allen (Albuquerque, NM)

    2003-01-01T23:59:59.000Z

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  6. Optical spin orientation of a single manganese atom in a semiconductor quantum dot using quasi-resonant excitation

    E-Print Network [OSTI]

    Boyer, Edmond

    of these mem- ories. Dilute magnetic semiconductors (DMS) systems combining semiconductor heterostructures

  7. Antiferromagnetic exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal

    E-Print Network [OSTI]

    Olejnik, K.

    2010-01-01T23:59:59.000Z

    exchange bias of a magnetic semiconductor by a magneticexchange bias in the magnetic semiconductor. The shape and

  8. Semiconductor nanowires for future electronics : growth, characterization, device fabrication, and integration

    E-Print Network [OSTI]

    Dayeh, Shadi A.

    2008-01-01T23:59:59.000Z

    1 1.1 Introduction to Semiconductorin InAs Semiconductor Nanowires. . . . . . . . . . . . .Comparison of different semiconductor NWFETs (non-passivated

  9. 962 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 4, NO. 3, MAY 2014 Ultrabroadband and Wide-Angle Hybrid

    E-Print Network [OSTI]

    Bowers, John

    962 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 4, NO. 3, MAY 2014 Ultrabroadband and Wide-Angle Hybrid) are essential to realizing efficiency gains for state-of- the-art multijunction photovoltaic devices approach. Index Terms--Biomimetics, optical films, photovoltaic cells, IIIV semiconductor materials. I

  10. Microwave to millimeter-wave electrodynamic response and applications of semiconductor nanostructures: LDRD project 67025 final report.

    SciTech Connect (OSTI)

    Shaner, Eric Arthur; Lee, Mark; Averitt, R. D. (Los Alamos National Laboratory); Highstrete, Clark; Taylor, A. J. (Los Alamos National Laboratory); Padilla, W. J. (Los Alamos National Laboratory); Reno, John Louis; Wanke, Michael Clement; Allen, S. James (University of California Santa Barbara)

    2006-11-01T23:59:59.000Z

    Solid-state lighting (SSL) technologies, based on semiconductor light emitting devices, have the potential to reduce worldwide electricity consumption by more than 10%, which could significantly reduce U.S. dependence on imported energy and improve energy security. The III-nitride (AlGaInN) materials system forms the foundation for white SSL and could cover a wide spectral range from the deep UV to the infrared. For this LDRD program, we have investigated the synthesis of single-crystalline III-nitride nanowires and heterostructure nanowires, which may possess unique optoelectronic properties. These novel structures could ultimately lead to the development of novel and highly efficient SSL nanodevice applications. GaN and III-nitride core-shell heterostructure nanowires were successfully synthesized by metal organic chemical vapor deposition (MOCVD) on two-inch wafer substrates. The effect of process conditions on nanowire growth was investigated, and characterization of the structural, optical, and electrical properties of the nanowires was also performed.

  11. Substrate solder barriers for semiconductor epilayer growth

    DOE Patents [OSTI]

    Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

    1987-10-23T23:59:59.000Z

    During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.

  12. Substrate solder barriers for semiconductor epilayer growth

    DOE Patents [OSTI]

    Drummond, Timothy J. (Tijeras, NM); Ginley, David S. (Albuquerque, NM); Zipperian, Thomas E. (Albuquerque, NM)

    1989-01-01T23:59:59.000Z

    During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

  13. Substrate solder barriers for semiconductor epilayer growth

    DOE Patents [OSTI]

    Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

    1989-05-09T23:59:59.000Z

    During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

  14. Codoped direct-gap semiconductor scintillators

    DOE Patents [OSTI]

    Derenzo, Stephen Edward (Pinole, CA); Bourret-Courchesne, Edith (Berkeley, CA); Weber, Marvin J. (Danville, CA); Klintenberg, Mattias K. (Berkeley, CA)

    2008-07-29T23:59:59.000Z

    Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

  15. Two-Photon Emission from Semiconductors

    E-Print Network [OSTI]

    Alex Hayat; Pavel Ginzburg; Meir Orenstein

    2007-10-25T23:59:59.000Z

    We report the first experimental observations of two-photon emission from semiconductors, to the best of our knowledge, and develop a corresponding theory for the room-temperature process. Spontaneous two-photon emission is demonstrated in optically-pumped bulk GaAs and in electrically-driven GaInP/AlGaInP quantum wells. Singly-stimulated two-photon emission measurements demonstrate the theoretically predicted two-photon optical gain in semiconductors - a necessary ingredient for any realizations of future two-photon semiconductor lasers. Photon-coincidence experiment validates the simultaneity of the electrically-driven GaInP/AlGaInP two-photon emission, limited only by detector's temporal resolution.

  16. Codoped direct-gap semiconductor scintillators

    DOE Patents [OSTI]

    Derenzo, Stephen E.; Bourret-Courchesne, Edith; Weber, Marvin J.; Klintenberg, Mattias K.

    2006-05-23T23:59:59.000Z

    Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

  17. Lattice mismatched compound semiconductors and devices on silicon

    E-Print Network [OSTI]

    Yang, Li, Ph. D. Massachusetts Institute of Technology

    2011-01-01T23:59:59.000Z

    III-V compound semiconductors, due to their superior electron mobility, are promising candidates for n-type metal-oxide-semiconductor field effect transistors (MOSFETs). However, the limited size of III-V substrates and ...

  18. Radio frequency identification (RFID) applications in semiconductor manufacturing

    E-Print Network [OSTI]

    Cassett, David Ian, 1971-

    2004-01-01T23:59:59.000Z

    Radio frequency identification (RFID) has an enormous potential impact within the semiconductor supply chain, especially within semiconductor manufacturing. The end benefit of RFID will be in the mass serialization, and ...

  19. A New Cleanroom for a Next-Generation Semiconductor Research...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A New Cleanroom for a Next-Generation Semiconductor Research Tool A New Cleanroom for a Next-Generation Semiconductor Research Tool Print The new Sector 12 cleanroom under...

  20. A study of corporate entrepreneurship in the semiconductor industry

    E-Print Network [OSTI]

    Tallapureddy, Anish R

    2014-01-01T23:59:59.000Z

    The number of semiconductor companies receiving venture funding has been decreasing through-out the last decade. The economics of manufacturing semiconductors do not offer an attractive risk-reward profile to the traditional ...

  1. Course Information --EE 531 Semiconductor Devices and Device Simulation

    E-Print Network [OSTI]

    Hochberg, Michael

    of Semiconductor Devices" by Hess "Si Processing for the VLSI Era: Vol. 3-- The Submicron MOSFET" by Wolf "Advanced: 20% Exam 1: 30% Exam 2: 30% Project: 20% Prerequisite: Semiconductor Devices (EE 482) or equivalent

  2. Surface passivation process of compound semiconductor material using UV photosulfidation

    DOE Patents [OSTI]

    Ashby, Carol I. H. (Edgewood, NM)

    1995-01-01T23:59:59.000Z

    A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

  3. Acoustoelectric Harmonic Generation in a Photoconductive Piezoelectric Semiconductor

    E-Print Network [OSTI]

    Acoustoelectric Harmonic Generation in a Photoconductive Piezoelectric Semiconductor W. Arthur, R harmonics in the low frequency regime (. Piezoelectric semiconductors can exhibit harmonic generation because of interactions between the acoustic

  4. Dry etching method for compound semiconductors

    DOE Patents [OSTI]

    Shul, R.J.; Constantine, C.

    1997-04-29T23:59:59.000Z

    A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

  5. High power semiconductor laser sources. Final report

    SciTech Connect (OSTI)

    Yariv, A.

    1989-01-01T23:59:59.000Z

    The main purpose of the research was to design and fabricate a surface-emitting semiconductor laser based on multi quantum-well amplification. During the contract period, the author succeeded in improving the basic quantum-well active medium so as to result in maximum gain for a given inversion density and analyzed the fabrication of GaAs/GaAlAs multilayer dielectric reflectors for providing the optical feedback to the surface-emitting semiconductor laser. He also made significant progress in the development of diffusion techniques to provide the p and n regions adjacent to the active region for carrier injection.

  6. Dry etching method for compound semiconductors

    DOE Patents [OSTI]

    Shul, Randy J. (Albuquerque, NM); Constantine, Christopher (Safety Harbor, FL)

    1997-01-01T23:59:59.000Z

    A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

  7. Method of physical vapor deposition of metal oxides on semiconductors

    DOE Patents [OSTI]

    Norton, David P. (Knoxville, TN)

    2001-01-01T23:59:59.000Z

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  8. Semiconductor liquid crystal composition and methods for making the same

    DOE Patents [OSTI]

    Alivisatos, A. Paul; Li, Liang-shi

    2005-04-26T23:59:59.000Z

    Semiconductor liquid crystal compositions and methods for making such compositions are disclosed. One embodiment of the invention is directed to a liquid crystal composition including a solvent and semiconductor particles in the solvent. The solvent and the semiconductor particles are in an effective amount in the liquid crystal composition to form a liquid crystal phase.

  9. Quantum of optical absorption in two-dimensional semiconductors

    E-Print Network [OSTI]

    California at Irvine, University of

    Quantum of optical absorption in two-dimensional semiconductors Hui Fanga,b,c , Hans A. Bechteld semiconductor, where is the fine structure con- stant and nc is an optical local field correction factor quantitative examination of the intrinsic absorption properties of free-standing 2D semiconductor thin films

  10. Effects of Quantum Confinement on the Doping Limit of Semiconductor

    E-Print Network [OSTI]

    Wu, Junqiao

    Effects of Quantum Confinement on the Doping Limit of Semiconductor Nanowires D. R. Khanal,, Joanne concentrations in semiconductor nanowires. Our calculations are based on the amphoteric defect model, which describes the thermodynamic doping limit in semiconductors in terms of the compensation of external dopants

  11. Defects activated photoluminescence in two-dimensional semiconductors

    E-Print Network [OSTI]

    Wu, Junqiao

    Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China, 3, Berkeley, California 94720, United States. Point defects in semiconductors can trap free charge carriers

  12. Structure and magnetism of transition-metal implanted dilute magnetic semiconductors

    E-Print Network [OSTI]

    Pereira, Lino; Temst, K; Arajo, JP; Wahl, U

    The discovery of a dilute magnetic semiconductor (DMS) in which ferromagnetism is carrier-mediated and persists above room temperature is a critical step towards the development of semiconductor-based spintronics. Among the many types of DMS materials which have been investigated, the current research interest can be narrowed down to two main classes of materials: (1) narrow-gap III-V semiconductors, mostly GaAs and InAs, doped with Mn; (2) wide-gap oxides and nitrides doped with 3d transition metals, mostly Mn- and Co-doped ZnO and Mn-doped GaN. With a number of interesting functionalities deriving from the carrier-mediated ferromagnetism and demonstrated in various proof-of-concept devices, Mn-doped GaAs has become, among DMS materials, one of the best candidates for technological application. However, despite major developments over the last 15 years, the maximum Curie temperature (185 K) remains well below room temperature. On the other hand, wide-gap DMS materials appear to exhibit ferromagnetic behavior...

  13. Physical properties and design of light-emitting devices based on organic materials and nanoparticles

    E-Print Network [OSTI]

    Anikeeva, Polina Olegovna

    2009-01-01T23:59:59.000Z

    This thesis presents the detailed experimental and theoretical characterization of light-emitting devices (LEDs) based on organic semiconductors and colloidal quantum dots (QDs). This hybrid material system has several ...

  14. Measurement and control of exciton spin in organic light emitting devices

    E-Print Network [OSTI]

    Segal, Michael, Ph. D. Massachusetts Institute of Technology

    2007-01-01T23:59:59.000Z

    Organic semiconductors are a promising new material set for electronic and optoelectronic devices. Their properties can be precisely controlled through chemistry, and they are well-suited for large-area, flexible, and ...

  15. Aspects of charge recombination and charge transport in organic solar cells and light-emitting devices

    E-Print Network [OSTI]

    Difley, Seth

    2010-01-01T23:59:59.000Z

    In this thesis, aspects of charge reconbination and charge transport in organic solar cells and light-emitting devices are presented. These devices show promise relative to traditional inorganic semiconductors. We show ...

  16. Band anticrossing effects in highly mismatched semiconductor alloys

    SciTech Connect (OSTI)

    Wu, Junqiao

    2002-09-09T23:59:59.000Z

    The first five chapters of this thesis focus on studies of band anticrossing (BAC) effects in highly electronegativity- mismatched semiconductor alloys. The concept of bandgap bowing has been used to describe the deviation of the alloy bandgap from a linear interpolation. Bowing parameters as large as 2.5 eV (for ZnSTe) and close to zero (for AlGaAs and ZnSSe) have been observed experimentally. Recent advances in thin film deposition techniques have allowed the growth of semiconductor alloys composed of significantly different constituents with ever- improving crystalline quality (e.g., GaAs{sub 1-x}N{sub x} and GaP{sub 1-x}N{sub x} with x {approx}< 0.05). These alloys exhibit many novel and interesting properties including, in particular, a giant bandgap bowing (bowing parameters > 14 eV). A band anticrossing model has been developed to explain these properties. The model shows that the predominant bowing mechanism in these systems is driven by the anticrossing interaction between the localized level associated with the minority component and the band states of the host. In this thesis I discuss my studies of the BAC effects in these highly mismatched semiconductors. It will be shown that the results of the physically intuitive BAC model can be derived from the Hamiltonian of the many-impurity Anderson model. The band restructuring caused by the BAC interaction is responsible for a series of experimental observations such as a large bandgap reduction, an enhancement of the electron effective mass, and a decrease in the pressure coefficient of the fundamental gap energy. Results of further experimental investigations of the optical properties of quantum wells based on these materials will be also presented. It will be shown that the BAC interaction occurs not only between localized states and conduction band states at the Brillouin zone center, but also exists over all of k-space. Finally, taking ZnSTe and ZnSeTe as examples, I show that BAC also occurs between localized states and the valence band states. Soft x-ray fluorescence experiments provide direct evidence of the BAC interaction in these systems. In the final chapter of the thesis, I describe and summarize my studies of optical properties of wurtzite InN and related alloys. Early studies performed on InN films grown by sputtering techniques suggested a direct bandgap of {approx}1.9 eV for this semiconductor. Very recently, high-quality InN films with much higher mobility have become available by using the molecular beam epitaxy growth method. Optical experiments carried out on these samples reveal a narrow bandgap for InN of 0.77 eV, much lower than the previously accepted value. Optical properties of InGaN and InAlN ternaries on the In rich side have also been characterized and are found to be consistent with the narrow bandgap of InN. The bandgap bowing parameters in these alloys were determined. In the context of these findings, the bandgap energies of InGaN and InAlN were found to cover a wide spectral range from the infrared for InN to the ultraviolet for GaN and deep ultraviolet for AlN. The significance of this work is rooted in many important applications of nitride semiconductors in optoelectronics and solar energy conversion devices.

  17. Analog Sauter-Schwinger effect in semiconductors

    E-Print Network [OSTI]

    Linder, Malte F

    2015-01-01T23:59:59.000Z

    We develop a 1+1-dimensional model of a semiconductor, which exhibits an analog of the nonperturbative electron-positron pair creation from the quantum vacuum via time-dependent external electric fields (Sauter-Schwinger effect). In the one-particle picture of the relativistic Dirac theory, pair production from the Dirac vacuum can be understood as the excitation of a Dirac sea electron into the upper energy continuum. The analog effect in the semiconductor model is the excitation of electrons from the valence band into the conduction band (electron-hole pair creation). We show that the underlying equations describing the excitation processes in both systems are in some cases formally equivalent. The critical electric field strength for the Sauter-Schwinger effect is much smaller in typical semiconductors than in Dirac theory due to the different physical scales. This fact makes analog systems like the semiconductor model promising candidates for the observation of the Sauter-Schwinger effect in the laborator...

  18. High resolution scintillation detector with semiconductor readout

    DOE Patents [OSTI]

    Levin, Craig S. (Santa Monica, CA); Hoffman, Edward J. (Los Angeles, CA)

    2000-01-01T23:59:59.000Z

    A novel high resolution scintillation detector array for use in radiation imaging such as high resolution Positron Emission Tomography (PET) which comprises one or more parallelepiped crystals with at least one long surface of each crystal being in intimate contact with a semiconductor photodetector such that photons generated within each crystal by gamma radiation passing therethrough is detected by the photodetector paired therewith.

  19. HYDROGEN LOCAL VIBRATIONAL MODES IN COMPOUND SEMICONDUCTORS

    E-Print Network [OSTI]

    McCluskey, Matthew

    HYDROGEN LOCAL VIBRATIONAL MODES IN COMPOUND SEMICONDUCTORS M.D. MCCLUSKEY* University) spectroscopy of hydrogen and deuterium in GaP, AlSb, ZnSe, and GaN has provided important information about the structures of dopant- hydrogen complexes and their interaction with the host lattice. In GaN:Mg, for example

  20. Optical temperature sensor using thermochromic semiconductors

    DOE Patents [OSTI]

    Kronberg, J.W.

    1994-01-01T23:59:59.000Z

    Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

  1. Laterally coupled-cavity semiconductor lasers

    SciTech Connect (OSTI)

    Lang, R.J.; Yariv, A.; Salzman, J.

    1987-04-01T23:59:59.000Z

    The authors analyze the threshold behaviour or a pair of laterally coupled semiconductor lasers of different lengths. The predictions include longitudinal mode selectivity leading to single longitudinal mode operation with a periodicity determined by the length mismatch, and ripples in the equipower curves in the current plane due to carrier-induced index shifts. They present experimental measurements that confirm these predictions.

  2. Theory of longitudinal modes in semiconductor lasers

    SciTech Connect (OSTI)

    Lau, K.Y.; Yariv, A.

    1982-05-01T23:59:59.000Z

    A theory of longitudinal mode lasing spectrum of semiconductor lasers is developed which takes into account the nonuniform carrier and photon distributions and local gain spectrum shifts inside lasers with low end mirror reflectivities. The theory gives results consistent with observed longitudinal mode behavior in lasers with reduced facet reflectivity.

  3. Semiconductor Nanowire Optical Antenna Solar Absorbers

    E-Print Network [OSTI]

    Fan, Shanhui

    a clear, intuitive guidance for the design of efficient NW solar cells. The presented approach technology. KEYWORDS Solar cell, semiconductor nanowires, optical antennas, photon management, light trapping employing non-earth-abundant elements like indium (CuInGaSe or CIGS cells) or tellurium (CdTe cells

  4. Preparation of III-V semiconductor nanocrystals

    DOE Patents [OSTI]

    Alivisatos, A.P.; Olshavsky, M.A.

    1996-04-09T23:59:59.000Z

    Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.

  5. Semiconductor laser with multiple lasing wavelengths

    DOE Patents [OSTI]

    Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.

    2003-07-29T23:59:59.000Z

    A new class of multi-terminal vertical-cavity semiconductor laser components has been developed. These multi-terminal laser components can be switched, either electrically or optically, between distinct lasing wavelengths, or can be made to lase simultaneously at multiple wavelengths.

  6. Optimal Preventive Maintenance Scheduling in Semiconductor Manufacturing

    E-Print Network [OSTI]

    Marcus, Steven I.

    1 Optimal Preventive Maintenance Scheduling in Semiconductor Manufacturing Xiaodong Yao, Emmanuel on Control Applications in 2001. #12;2 Abstract Preventive Maintenance (PM) scheduling is a very challenging schedule with that of a baseline reference schedule are also presented. Index Terms preventive maintenance

  7. Semiconductor detectors with proximity signal readout

    SciTech Connect (OSTI)

    Asztalos, Stephen J. [XIA, LLC, Hayward, CA (United States)

    2014-01-30T23:59:59.000Z

    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need.

  8. Solid State Lighting Semiconductor Spectroscopy & Devices

    E-Print Network [OSTI]

    Strathclyde, University of

    and fluorescent lamps, are very inefficient in transforming energy into light. Due to upcoming problems in energy % of Earth's total power consumption is used for lighting! Figure 3: Earth at night from space. Evolution inside a semiconductor for light emission. Over 150 years ago... How to achieve white LEDs? Figure 5

  9. Preparation of III-V semiconductor nanocrystals

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Berkeley, CA); Olshavsky, Michael A. (Brunswick, OH)

    1996-01-01T23:59:59.000Z

    Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

  10. Analog Sauter-Schwinger effect in semiconductors

    E-Print Network [OSTI]

    Malte F. Linder; Ralf Schtzhold

    2015-03-24T23:59:59.000Z

    We develop a 1+1-dimensional model of a semiconductor, which exhibits an analog of the nonperturbative electron-positron pair creation from the quantum vacuum via time-dependent external electric fields (Sauter-Schwinger effect). In the one-particle picture of the relativistic Dirac theory, pair production from the Dirac vacuum can be understood as the excitation of a Dirac sea electron into the upper energy continuum. The analog effect in the semiconductor model is the excitation of electrons from the valence band into the conduction band (electron-hole pair creation). We show that the underlying equations describing the excitation processes in both systems are in some cases formally equivalent. The critical electric field strength for the Sauter-Schwinger effect is much smaller in typical semiconductors than in Dirac theory due to the different physical scales. This fact makes analog systems like the semiconductor model promising candidates for the observation of the Sauter-Schwinger effect in the laboratory.

  11. Bi-Se doped with Cu, p-type semiconductor

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

    2013-08-20T23:59:59.000Z

    A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

  12. Lattice matched semiconductor growth on crystalline metallic substrates

    DOE Patents [OSTI]

    Norman, Andrew G; Ptak, Aaron J; McMahon, William E

    2013-11-05T23:59:59.000Z

    Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

  13. Wide field of view telescope

    DOE Patents [OSTI]

    Ackermann, Mark R. (Albuquerque, NM); McGraw, John T. (Placitas, NM); Zimmer, Peter C. (Albuquerque, NM)

    2008-01-15T23:59:59.000Z

    A wide field of view telescope having two concave and two convex reflective surfaces, each with an aspheric surface contour, has a flat focal plane array. Each of the primary, secondary, tertiary, and quaternary reflective surfaces are rotationally symmetric about the optical axis. The combination of the reflective surfaces results in a wide field of view in the range of approximately 3.8.degree. to approximately 6.5.degree.. The length of the telescope along the optical axis is approximately equal to or less than the diameter of the largest of the reflective surfaces.

  14. Controlled growth of larger heterojunction interface area for organic photosensitive devices

    DOE Patents [OSTI]

    Yang, Fan (Somerset, NJ); Forrest, Stephen R. (Ann Arbor, MI)

    2009-12-29T23:59:59.000Z

    An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.

  15. Depth Profiling Photoelectron-Spectroscopic Study of an Organic Spin Valve with a Plasma-Modified Pentacene Spacer

    E-Print Network [OSTI]

    Lin, Minn-Tsong

    Depth Profiling Photoelectron-Spectroscopic Study of an Organic Spin Valve with a Plasma) in an organic spin valve with an oxygen plasma-treated pentacene (PC) spacer. The spin valve containing PC and in turn to enhance the MR performance in organic spin valves. INTRODUCTION Organic semiconductors (OSC

  16. SOFTWAREENGINEERING The World Wide Web

    E-Print Network [OSTI]

    Whitehead, James

    SOFTWAREENGINEERING The World Wide Web Distributed Authoring and Versioning working group on the Web. WEBDAV: IETF Standard for Collaborative Authoring on the Web E. JAMES WHITEHEAD, JR. University remains to be done. What if instead you could simply edit Web documents (or any Web resource) in place

  17. Going Deep vs. Going Wide

    Broader source: Energy.gov [DOE]

    Going Deep vs. Going Wide, from the Residential Energy Efficiency Solutions Conference 2012. Provides an overview on the progress of four energy efficiency programs: Clean Energy Works Oregon, Efficiency Maine, Energy Upgrade California Flex Path, and EcoHouse Loan Program.

  18. Time-resolved THz studies of carrier dynamics in semiconductors, superconductors, and strongly-correlated electron materials

    E-Print Network [OSTI]

    Kaindl, Robert A

    2011-01-01T23:59:59.000Z

    correlation effects in semiconductors, Nature 411, 549-557,in optically excited semiconductors, Phys. Rev. B 54,and Terahertz Gain in Semiconductors Excited to Resonance,

  19. Proximity charge sensing for semiconductor detectors

    DOE Patents [OSTI]

    Luke, Paul N; Tindall, Craig S; Amman, Mark

    2013-10-08T23:59:59.000Z

    A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.

  20. Semiconductor Probes of Light Dark Matter

    E-Print Network [OSTI]

    Peter W. Graham; David E. Kaplan; Surjeet Rajendran; Matthew T. Walters

    2012-11-12T23:59:59.000Z

    Dark matter with mass below about a GeV is essentially unobservable in conventional direct detection experiments. However, newly proposed technology will allow the detection of single electron events in semiconductor materials with significantly lowered thresholds. This would allow detection of dark matter as light as an MeV in mass. Compared to other detection technologies, semiconductors allow enhanced sensitivity because of their low ionization energy around an eV. Such detectors would be particularly sensitive to dark matter with electric and magnetic dipole moments, with a reach many orders of magnitude beyond current bounds. Observable dipole moment interactions can be generated by new particles with masses as great as 1000 TeV, providing a window to scales beyond the reach of current colliders.

  1. Optical cavity furnace for semiconductor wafer processing

    DOE Patents [OSTI]

    Sopori, Bhushan L.

    2014-08-05T23:59:59.000Z

    An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

  2. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  3. Scanning probe microscopy studies of semiconductor surfaces

    SciTech Connect (OSTI)

    Weinberg, W.H. [Univ. of California, Santa Barbara, CA (United States)

    1996-10-01T23:59:59.000Z

    Recent work involving atomic force microscopy and scanning tunneling microscopy is discussed which involves strain-induced, self-assembling nanostructures in compound semiconductor materials. Specific examples include one-dimensional quantum wires of InAs grown by MBE on GaAs(001) and zero-dimensional quantum dots of InP grown by MOCVD on InGaP which is lattice matched to GaAs(001).

  4. Visible-wavelength semiconductor lasers and arrays

    DOE Patents [OSTI]

    Schneider, Jr., Richard P. (Albuquerque, NM); Crawford, Mary H. (Albuquerque, NM)

    1996-01-01T23:59:59.000Z

    A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

  5. 7/14/2004 World of Compound Semiconductors Page 1 of 191 TThhee WWoorrlldd

    E-Print Network [OSTI]

    7/14/2004 World of Compound Semiconductors Page 1 of 191 TThhee WWoorrlldd ooff CCoommppoouunndd ...... ---- ...... ---- ...... ---- ...... ---- ...... ---- ...... ---- ...... ---- #12;7/14/2004 World of Compound Semiconductors Page 2 of 191 0.1 Scope Compound III-V Semiconductors A new family of semiconductors is changing the way we live. These semiconductors are in our cell phones

  6. 1.0. Semiconductor Diodes 1 of 27 1.2 Ideal Diode

    E-Print Network [OSTI]

    Allen, Gale

    1.0. Semiconductor Diodes 1 of 27 1.2 Ideal Diode ID VD ID Open Circuit Short Circuit VD + - #12;1.0. Semiconductor Diodes 2 of 27 1.3 Semiconductor Materials Conductor Insulator Semiconductor R = (Resistivity Resistivity of a semiconductor decreases as temperature increases. ure coefficient.Negative temperat #12

  7. Elastomeric organic material for switching application

    SciTech Connect (OSTI)

    Shiju, K., E-mail: shijuvenus@gmail.com, E-mail: pravymon@gmail.com, E-mail: ppredeep@gmail.com; Praveen, T., E-mail: shijuvenus@gmail.com, E-mail: pravymon@gmail.com, E-mail: ppredeep@gmail.com; Preedep, P., E-mail: shijuvenus@gmail.com, E-mail: pravymon@gmail.com, E-mail: ppredeep@gmail.com [Laboratory for Molecular Photonics and Electronics (LAMP), Department of Physics, National Institute of Technology, Calicut, Kerala, 673601 (India)

    2014-10-15T23:59:59.000Z

    Organic Electronic devices like OLED, Organic Solar Cells etc are promising as, cost effective alternatives to their inorganic counterparts due to various reasons. However the organic semiconductors currently available are not attractive with respect to their high cost and intricate synthesis protocols. Here we demonstrate that Natural Rubber has the potential to become a cost effective solution to this. Here an attempt has been made to fabricate iodine doped poly isoprene based switching device. In this work Poly methyl methacrylate is used as dielectric layer and Aluminium are employed as electrodes.

  8. Photovoltaic healing of non-uniformities in semiconductor devices

    DOE Patents [OSTI]

    Karpov, Victor G.; Roussillon, Yann; Shvydka, Diana; Compaan, Alvin D.; Giolando, Dean M.

    2006-08-29T23:59:59.000Z

    A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.

  9. Band gap engineering at a semiconductor - crystalline oxide interface

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Moghadam, Jahangir-Moghadam; Shen, Xuan; Chrysler, Matthew; Ahmadi-Majlan, Kamyar; Su, Dong; Ngai, Joseph H.

    2015-03-01T23:59:59.000Z

    The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZrxTi1-xO? and Ge, in which the band gap of the former is enhanced with Zr content x. We presentmorestructural and electrical characterization of SrZrxTi1-xO?-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.less

  10. Method and system for powering and cooling semiconductor lasers

    DOE Patents [OSTI]

    Telford, Steven J; Ladran, Anthony S

    2014-02-25T23:59:59.000Z

    A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

  11. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOE Patents [OSTI]

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2013-03-26T23:59:59.000Z

    Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  12. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Scher, Erik C. (San Francisco, CA); Manna, Liberato (Palo Del Collie, IT)

    2009-05-19T23:59:59.000Z

    Disclosed herein is a graded core/shell semiconductor nanorod having at least a first segment of a core of a Group II-VI, Group III-V or a Group IV semiconductor, a graded shell overlying the core, wherein the graded shell comprises at least two monolayers, wherein the at least two monolayers each independently comprise a Group II-VI, Group III-V or a Group IV semiconductor.

  13. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Oakland, CA); Scher, Erik C. (San Francisco, CA); Manna, Liberato (Lecce, IT)

    2010-12-14T23:59:59.000Z

    Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  14. Deposition method for producing silicon carbide high-temperature semiconductors

    DOE Patents [OSTI]

    Hsu, George C. (La Crescenta, CA); Rohatgi, Naresh K. (W. Corine, CA)

    1987-01-01T23:59:59.000Z

    An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

  15. Production of pulsed, mass-selected beams of metal and semiconductor clusters

    SciTech Connect (OSTI)

    Kamalou, Omar; Rangama, Jimmy; Ramillon, Jean-Marc; Guinement, Patrick; Huber, Bernd A. [CIMAP, CEA-CNRS-ENSICaen-UCBN, Bv. Henry Becquerel (B.P. 5133), F-14070 Caen Cedex 05 (France)

    2008-06-15T23:59:59.000Z

    We report on the development of a beam line for mass-selected metal and semiconductor clusters. The cluster source combines the principles of plasma sputtering and gas condensation. Both techniques together allow to produce clusters in a wide size range. With the aid of a time-of-flight system, small clusters (i.e., Cu{sub n}{sup +}, n<100) are selected and pure beams containing only one cluster size are provided. For large clusters (containing several thousands of atoms), a beam with a narrow size distribution is obtained. A 90 deg. quadrupole deviator is used to separate charged clusters from neutral ones.

  16. Method for fabricating an interconnected array of semiconductor devices

    DOE Patents [OSTI]

    Grimmer, Derrick P. (White Bear Lake, MN); Paulson, Kenneth R. (North St. Paul, MN); Gilbert, James R. (St. Paul, MN)

    1989-10-10T23:59:59.000Z

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  17. Kyungdong Photovoltaic Energy Corp KPE formerly Photon Semiconductor...

    Open Energy Info (EERE)

    Kyungdong Photovoltaic Energy Corp KPE formerly Photon Semiconductor Energy Jump to: navigation, search Name: Kyungdong Photovoltaic Energy Corp (KPE) (formerly Photon...

  18. Magnetic Gas Sensing Using a Dilute Magnetic Semiconductor. ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Abstract: The authors report on a magnetic gas sensing methodology to detect hydrogen using the ferromagnetic properties of a nanoscale dilute magnetic semiconductor...

  19. Method for depositing high-quality microcrystalline semiconductor materials

    DOE Patents [OSTI]

    Guha, Subhendu (Bloomfield Hills, MI); Yang, Chi C. (Troy, MI); Yan, Baojie (Rochester Hills, MI)

    2011-03-08T23:59:59.000Z

    A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

  20. Statistical Methods for Enhanced Metrology in Semiconductor/Photovoltaic Manufacturing

    E-Print Network [OSTI]

    Zeng, Dekong

    2012-01-01T23:59:59.000Z

    process control charts (SPC) for product quality and processstatistical process control (SPC) charts. The concept is toMethods Univariate SPC for semiconductor manufacturing

  1. Argonne announces new licensing agreement with AKHAN Semiconductor...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Argonne announces new licensing agreement with AKHAN Semiconductor By Jared Sagoff * November 19, 2014 Tweet EmailPrint ARGONNE, Ill. - The U.S. Department of Energy's (DOE)...

  2. Metal Oxide Semiconductor Nanoparticles Open the Door to New...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovations Technology available for licensing: novel nanometer-sized metal oxide semiconductors that allow targeting, initiating and control of in vitro and in vivo chemical...

  3. Ferromagnetic Semiconductor Nanoclusters: Co-doped Cu2O. | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    exhibits a temperature dependent decrease. Citation: Antony J, Y Qiang, F Muhammad, D Meyer, DE McCready, and MH Engelhard.2007."Ferromagnetic Semiconductor Nanoclusters:...

  4. The Technical and Economic Potential for Electricity Energy Efficiency in a Semiconductor Manufacturing Plant

    E-Print Network [OSTI]

    Lee, A. H. W.; Golden, J. W.; Zarnikau, J. W.

    In recent years, there has been renewed interest in energy efficiency in the semiconductor industry. The declining prices for semiconductor products has prompted semiconductor manufacturing plants to control costs so as to maintain profitability...

  5. Polarized x-ray spectroscopy of quaternary ferromagnetic semiconductor (Ga,Mn)(As,P)

    E-Print Network [OSTI]

    Wadley, P.

    2011-01-01T23:59:59.000Z

    quaternary diluted magnetic semiconductor (Ga,Mn)(As,P) as aIn diluted magnetic semiconductors such as (Ga,Mn)As, whichquaternary diluted magnetic semiconductors such as (Ga,Mn)(

  6. Construction of a Deep Level Transient Spectroscopy (DLTS) Setup Semiconductors and DLTS

    E-Print Network [OSTI]

    Zhao, Yuxiao

    Construction of a Deep Level Transient Spectroscopy (DLTS) Setup Semiconductors and DLTS Semiconductor devices are central to information technology. Their importance stems from the fact Ian Booker Semiconductor Materials Group Dept. Of Physics, Chemistry and Biology, IFM Linkping

  7. Study of Semiconductor Microring Lasers for use in Wavelength Division Multiplexing (WDM)

    E-Print Network [OSTI]

    Kouroupetroglou, Georgios

    Study of Semiconductor Microring Lasers for use in Wavelength Division Multiplexing (WDM of all-active microring resonators as lasers are studied. The structure of a semiconductor microring demonstrated. Keywords: Semiconductor microring lasers, non-linear gain, multimode operation, mode

  8. Atomic and electronic structures of oxides on III-V semiconductors :

    E-Print Network [OSTI]

    Shen, Jian

    2010-01-01T23:59:59.000Z

    and passivation of a compound semiconductor surface duringIn 2 O and SiO/III-V Semiconductor Interface, in press with2 O and SiO/III-V Semiconductor Interface, ECS Transaction (

  9. Strain broadening of the magnetization steps in diluted magnetic semiconductors Yuri G. Rubo* and M. F. Thorpe

    E-Print Network [OSTI]

    Thorpe, Michael

    Strain broadening of the magnetization steps in diluted magnetic semiconductors Yuri G. Rubo* and M alloys diluted magnetic semiconductors results in fluctuations of the exchange constants between semiconducting alloys, the so- called semimagnetic semiconductors or diluted magnetic semiconductors DMS

  10. Wide-range voltage modulation

    SciTech Connect (OSTI)

    Rust, K.R.; Wilson, J.M.

    1992-06-01T23:59:59.000Z

    The Superconducting Super Collider`s Medium Energy Booster Abort (MEBA) kicker modulator will supply a current pulse to the abort magnets which deflect the proton beam from the MEB ring into a designated beam stop. The abort kicker will be used extensively during testing of the Low Energy Booster (LEB) and the MEB rings. When the Collider is in full operation, the MEBA kicker modulator will abort the MEB beam in the event of a malfunction during the filling process. The modulator must generate a 14-{mu}s wide pulse with a rise time of less than 1 {mu}s, including the delay and jitter times. It must also be able to deliver a current pulse to the magnet proportional to the beam energy at any time during ramp-up of the accelerator. Tracking the beam energy, which increases from 12 GeV at injection to 200 GeV at extraction, requires the modulator to operate over a wide range of voltages (4 kV to 80 kV). A vacuum spark gap and a thyratron have been chosen for test and evaluation as candidate switches for the abort modulator. Modulator design, switching time delay, jitter and pre-fire data are presented.

  11. Semiconductor heterojunction band offsets and charge neutrality

    E-Print Network [OSTI]

    Lee, Chomsik

    1989-01-01T23:59:59.000Z

    = 33&Pb = 3 3&PAB = 35 1 . aI M 0 A 0. ? 1 2. 0. Energy(eV) 1 2. 0 0. ? 1 0. Energy(eV) 1 2. Figure 4. 4. Local density of states, parameters for this case are s, = ? 7, s?= 1, s, = l&sp 7~Pa = 4~A = 4)DAB ? .35. -12. 0. Energy(eV) 0... Signature of APS Member Roland E. Allen Department of Physics'- Texas A&M University ' College Station, TX 77843 s p ~ CX3 SEMICONDUCTOR HETEROJUNCTION BAND OFFSETS AND CHARGE NEUTRALITY A Thesis by CHOMSIK LEE Submitted to the Oflice of Graduate...

  12. Transient Rayleigh scattering from single semiconductor nanowires

    SciTech Connect (OSTI)

    Montazeri, Mohammad; Jackson, Howard E.; Smith, Leigh M. [Department of Physics, University of Cincinnati, Cincinnati, OH 45221-0011 (United States); Yarrison-Rice, Jan M. [Department of Physics, Miami University, Oxford, OH 45056 (United States); Kang, Jung-Hyun; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

    2013-12-04T23:59:59.000Z

    Transient Rayleigh scattering spectroscopy is a new pump-probe technique to study the dynamics and cooling of photo-excited carriers in single semiconductor nanowires. By studying the evolution of the transient Rayleigh spectrum in time after excitation, one can measure the time evolution of the density and temperature of photo-excited electron-hole plasma (EHP) as they equilibrate with lattice. This provides detailed information of dynamics and cooling of carriers including linear and bimolecular recombination properties, carrier transport characteristics, and the energy-loss rate of hot electron-hole plasma through the emission of LO and acoustic phonons.

  13. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  14. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  15. Dissipative dynamics in semiconductors at low temperature

    E-Print Network [OSTI]

    George Androulakis; Jean Bellissard; Christian Sadel

    2011-07-06T23:59:59.000Z

    A mathematical model is introduced which describes the dissipation of electrons in lightly doped semi-conductors. The dissipation operator is proved to be densely defined and positive and to generate a Markov semigroup of operators. The spectrum of the dissipation operator is studied and it is shown that zero is a simple eigenvalue, which makes the equilibrium state unique. Also it is shown that there is a gap between zero and the rest of its spectrum which makes the return to equilibrium exponentially fast in time.

  16. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology

    SciTech Connect (OSTI)

    Dargis, Rytis, E-mail: dargis@translucentinc.com; Clark, Andrew; Erdem Arkun, Fevzi [Translucent, Inc., 952 Commercial St., Palo Alto, California 94303 (United States); Grinys, Tomas; Tomasiunas, Rolandas [Institute of Applied Research, Vilnius University, Sauletekio al. 10, LT-10223 Vilnius (Lithuania); O'Hara, Andy; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, 2515 Speedway, C1600, Austin, Texas 78712 (United States)

    2014-07-01T23:59:59.000Z

    Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed.

  17. Modular Algorithms for Transient Semiconductor Device Simulation, Part I

    E-Print Network [OSTI]

    Jerome, Joseph W.

    Modular Algorithms for Transient Semiconductor Device Simulation, Part I: Analysis of the Outer, is introduced at dis- crete time steps for the one-dimensional semiconductor device model. The it- eration as approximate Newton iterations. Continuation is employed as the time-stepping bridge. 1 Introduction In Part I

  18. Effect of superluminescence on the modulation response of semiconductor lasers

    SciTech Connect (OSTI)

    Lau, K.Y.; Yariv, A.

    1982-03-15T23:59:59.000Z

    The small-signal modulation response of semiconductor lasers with a very small mirror reflectivity is analyzed. Superluminescent effects inside the laser cavity provide yet another mechanism for damping relaxation oscillation resonance. These results can serve as useful guides in designing high frequency semiconductor lasers.

  19. Profiling the Thermoelectric Power of Semiconductor Junctions with

    E-Print Network [OSTI]

    Profiling the Thermoelectric Power of Semiconductor Junctions with Nanometer Resolution Ho-Ki Lyeo,3 * We have probed the local thermoelectric power of semiconductor nanostruc- tures with the use of ultrahigh-vacuum scanning thermoelectric microscopy. When applied to a p-n junction, this method reveals

  20. ECE 451 -Fall 2011 Physics of Semiconductor Devices (3)

    E-Print Network [OSTI]

    Gilchrist, James F.

    ECE 451 - Fall 2011 Physics of Semiconductor Devices (3) Electronics and Optoelectronics-Photon Scattering Processes (Optional) 18. Novel Optoelectronics and Electronics Devices (Optional) Structure on Semiconductor Physics and Device Physics, Draft Version (2010). Other Additional References or Readings: 1. J

  1. hal00267005, Modeling semiconductor thermal properties. The dispersion role.

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    , or in solar panels 3 , and are even used in medicine 4 . The increasing use of semiconductor micro in transistors 6 and semiconductor nano#12;lms in solar cells. At these low scale, Fourier's law may give , similar to photon intensity used in radiative transfer 24 . Thus, the energy ux per apparent surface unit

  2. Propagation of Nonclassical Radiation through a Semiconductor Slab

    E-Print Network [OSTI]

    D. Yu. Vasylyev; W. Vogel; T. Schmielau; K. Henneberger; D. -G. Welsch

    2008-02-20T23:59:59.000Z

    Based on a microscopic derivation of the emission spectra of a bulk semiconductor we arrive at a clear physical interpretation of the noise current operators in macroscopic quantum electrodynamics. This opens the possibility to study medium effects on nonclassical radiation propagating through an absorbing or amplifying semiconductor. As an example, the propagation of an incident squeezed vacuum is analyzed.

  3. Apparatus for the etching for semiconductor devices

    SciTech Connect (OSTI)

    Reinberg, A.R.; Steinberg, G.N.

    1983-01-11T23:59:59.000Z

    Apparatus for the etching of semiconductor devices which includes, in combination, an etching chamber containing the semiconductor device to be etched, an electrodeless etching plasma forming chamber having an inlet connected to a source of continuously flowing etching gas and having an outlet connected to said etching chamber in fluid flow communication; a helical inductive resonator coupler for coupling a source of R.F. electrical power into the electrodeless plasma forming chamber for continuously forming etching plasma from the etching gas flowing therethrough; this inductive resonator coupler including a grounded hollow cylinder of electrically conductive material, with a grounded base member at one end; a helically coiled wire conductor concentrically mounted within the cylinder and spaced from the inner walls thereof; the plasma forming chamber being mounted substantially concentrically within the coil, the end of the coil toward the base member being grounded; and an electrical coupling for applying into the coil an R.F. source of electrical power at a position near, but spaced from, the grounded end thereof.

  4. Coated semiconductor devices for neutron detection

    DOE Patents [OSTI]

    Klann, Raymond T. (Bolingbrook, IL); McGregor, Douglas S. (Whitmore Lake, MI)

    2002-01-01T23:59:59.000Z

    A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.

  5. Visible-wavelength semiconductor lasers and arrays

    DOE Patents [OSTI]

    Schneider, R.P. Jr.; Crawford, M.H.

    1996-09-17T23:59:59.000Z

    The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

  6. Development of fluorocarbon evaporative cooling recirculators and controls for the ATLAS pixel and semiconductor tracking detectors

    E-Print Network [OSTI]

    Bayer, C; Bonneau, P; Bosteels, Michel; Burckhart, H J; Cragg, D; English, R; Hallewell, G D; Hallgren, Bjrn I; Kersten, S; Kind, P; Langedrag, K; Lindsay, S; Merkel, M; Stapnes, Steinar; Thadome, J; Vacek, V

    2000-01-01T23:59:59.000Z

    Development of fluorocarbon evaporative cooling recirculators and controls for the ATLAS pixel and semiconductor tracking detectors

  7. High power semiconductor laser sources. Annual report, 12 March 1985-11 March 1986

    SciTech Connect (OSTI)

    Lang, R.; Salzman, J.; Yariv

    1986-06-10T23:59:59.000Z

    Unstable semiconductor lasers were fabricated, and their potential as high power laser sources was analyzed.

  8. Control of coherence resonance in semiconductor superlattices

    E-Print Network [OSTI]

    Johanne Hizanidis; Eckehard Schoell

    2008-09-01T23:59:59.000Z

    We study the effect of time-delayed feedback control and Gaussian white noise on the spatio-temporal charge dynamics in a semiconductor superlattice. The system is prepared in a regime where the deterministic dynamics is close to a global bifurcation, namely a saddle-node bifurcation on a limit cycle ({\\it SNIPER}). In the absence of control, noise can induce electron charge front motion through the entire device, and coherence resonance is observed. We show that with appropriate selection of the time-delayed feedback parameters the effect of coherence resonance can either be enhanced or destroyed, and the coherence of stochastic domain motion at low noise intensity is dramatically increased. Additionally, the purely delay-induced dynamics in the system is investigated, and a homoclinic bifurcation of a limit cycle is found.

  9. Modeling direct interband tunneling. I. Bulk semiconductors

    SciTech Connect (OSTI)

    Pan, Andrew, E-mail: pandrew@ucla.edu [Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095 (United States); Chui, Chi On [Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, California 90095 (United States); California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095 (United States)

    2014-08-07T23:59:59.000Z

    Interband tunneling is frequently studied using the semiclassical Kane model, despite uncertainty about its validity. Revisiting the physical basis of this formula, we find that it neglects coupling to other bands and underestimates transverse tunneling. As a result, significant errors can arise at low and high fields for small and large gap materials, respectively. We derive a simple multiband tunneling model to correct these defects analytically without arbitrary parameters. Through extensive comparison with band structure and quantum transport calculations for bulk InGaAs, InAs, and InSb, we probe the accuracy of the Kane and multiband formulas and establish the superiority of the latter. We also show that the nonlocal average electric field should be used when applying either of these models to nonuniform potentials. Our findings are important for efficient analysis and simulation of bulk semiconductor devices involving tunneling.

  10. Ion Trap in a Semiconductor Chip

    E-Print Network [OSTI]

    D. Stick; W. K. Hensinger; S. Olmschenk; M. J. Madsen; K. Schwab; C. Monroe

    2006-01-09T23:59:59.000Z

    The electromagnetic manipulation of isolated atoms has led to many advances in physics, from laser cooling and Bose-Einstein condensation of cold gases to the precise quantum control of individual atomic ion. Work on miniaturizing electromagnetic traps to the micrometer scale promises even higher levels of control and reliability. Compared with 'chip traps' for confining neutral atoms, ion traps with similar dimensions and power dissipation offer much higher confinement forces and allow unparalleled control at the single-atom level. Moreover, ion microtraps are of great interest in the development of miniature mass spectrometer arrays, compact atomic clocks, and most notably, large scale quantum information processors. Here we report the operation of a micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. We confine, laser cool, and measure heating of a single 111Cd+ ion in an integrated radiofrequency trap etched from a doped gallium arsenide (GaAs) heterostructure.

  11. Ultra wide-bandwidth micro energy harvester

    E-Print Network [OSTI]

    Hajati, Arman

    2011-01-01T23:59:59.000Z

    An ultra wide-bandwidth resonating thin film PZT MEMS energy harvester has been designed, modeled, fabricated and tested. It harvests energy from parasitic ambient vibration at a wide range of amplitude and frequency via ...

  12. Simulation of neutron radiation damage in silicon semiconductor devices.

    SciTech Connect (OSTI)

    Shadid, John Nicolas; Hoekstra, Robert John; Hennigan, Gary Lee; Castro, Joseph Pete Jr.; Fixel, Deborah A.

    2007-10-01T23:59:59.000Z

    A code, Charon, is described which simulates the effects that neutron damage has on silicon semiconductor devices. The code uses a stabilized, finite-element discretization of the semiconductor drift-diffusion equations. The mathematical model used to simulate semiconductor devices in both normal and radiation environments will be described. Modeling of defect complexes is accomplished by adding an additional drift-diffusion equation for each of the defect species. Additionally, details are given describing how Charon can efficiently solve very large problems using modern parallel computers. Comparison between Charon and experiment will be given, as well as comparison with results from commercially-available TCAD codes.

  13. Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers

    DOE Patents [OSTI]

    Alivisatos, A.P.; Colvin, V.L.

    1998-05-12T23:59:59.000Z

    Methods are described for attaching semiconductor nanocrystals to solid inorganic surfaces, using self-assembled bifunctional organic monolayers as bridge compounds. Two different techniques are presented. One relies on the formation of self-assembled monolayers on these surfaces. When exposed to solutions of nanocrystals, these bridge compounds bind the crystals and anchor them to the surface. The second technique attaches nanocrystals already coated with bridge compounds to the surfaces. Analyses indicate the presence of quantum confined clusters on the surfaces at the nanolayer level. These materials allow electron spectroscopies to be completed on condensed phase clusters, and represent a first step towards synthesis of an organized assembly of clusters. These new products are also disclosed. 10 figs.

  14. Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers

    DOE Patents [OSTI]

    Alivisatos, A. Paul (Berkeley, CA); Colvin, Vicki L. (Berkeley, CA)

    1998-01-01T23:59:59.000Z

    Methods are described for attaching semiconductor nanocrystals to solid inorganic surfaces, using self-assembled bifunctional organic monolayers as bridge compounds. Two different techniques are presented. One relies on the formation of self-assembled monolayers on these surfaces. When exposed to solutions of nanocrystals, these bridge compounds bind the crystals and anchor them to the surface. The second technique attaches nanocrystals already coated with bridge compounds to the surfaces. Analyses indicate the presence of quantum confined clusters on the surfaces at the nanolayer level. These materials allow electron spectroscopies to be completed on condensed phase clusters, and represent a first step towards synthesis of an organized assembly of clusters. These new products are also disclosed.

  15. Synthesis and Manipulation of Semiconductor Nanocrystals inMicrofluidic Reactors

    SciTech Connect (OSTI)

    Chan, Emory Ming-Yue

    2006-12-19T23:59:59.000Z

    Microfluidic reactors are investigated as a mechanism tocontrol the growth of semiconductor nanocrystals and characterize thestructural evolution of colloidal quantum dots. Due to their shortdiffusion lengths, low thermal masses, and predictable fluid dynamics,microfluidic devices can be used to quickly and reproducibly alterreaction conditions such as concentration, temperature, and reactiontime, while allowing for rapid reagent mixing and productcharacterization. These features are particularly useful for colloidalnanocrystal reactions, which scale poorly and are difficult to controland characterize in bulk fluids. To demonstrate the capabilities ofnanoparticle microreactors, a size series of spherical CdSe nanocrystalswas synthesized at high temperature in a continuous-flow, microfabricatedglass reactor. Nanocrystal diameters are reproducibly controlled bysystematically altering reaction parameters such as the temperature,concentration, and reaction time. Microreactors with finer control overtemperature and reagent mixing were designed to synthesize nanoparticlesof different shapes, such as rods, tetrapods, and hollow shells. The twomajor challenges observed with continuous flow reactors are thedeposition of particles on channel walls and the broad distribution ofresidence times that result from laminar flow. To alleviate theseproblems, I designed and fabricated liquid-liquid segmented flowmicroreactors in which the reaction precursors are encapsulated inflowing droplets suspended in an immiscible carrier fluid. The synthesisof CdSe nanocrystals in such microreactors exhibited reduced depositionand residence time distributions while enabling the rapid screening aseries of samples isolated in nL droplets. Microfluidic reactors werealso designed to modify the composition of existing nanocrystals andcharacterize the kinetics of such reactions. The millisecond kinetics ofthe CdSe-to-Ag2Se nanocrystal cation exchange reaction are measured insitu with micro-X-ray Absorption Spectroscopy in silicon microreactorsspecifically designed for rapid mixing and time-resolved X-rayspectroscopy. These results demonstrate that microreactors are valuablefor controlling and characterizing a wide range of reactions in nLvolumes even when nanoscale particles, high temperatures, causticreagents, and rapid time scales are involved. These experiments providethe foundation for future microfluidic investigations into the mechanismsof nanocrystal growth, crystal phase evolution, and heterostructureassembly.

  16. Submitting Organization Sandia National ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    semiconductor devices, consumer electronics, high-performance optical coatings and photovoltaics is dominated by methods that require nonambient processing conditions, expensive...

  17. Thermal Conductivity of Polycrystalline Semiconductors and Ceramics

    E-Print Network [OSTI]

    Wang, Zhaojie

    2012-01-01T23:59:59.000Z

    widely named as spark plasma sintering (SPS), field-assistedalso known as spark plasma sintering (SPS) or the fieldsintering (PECS), there is little convincing evidence showing there are sparks or plasma

  18. Freescale Semiconductor Successfully Implements an Energy Management...

    Broader source: Energy.gov (indexed) [DOE]

    projects at its Oak Hill Fab plant in Austin, Texas, that reduced annual plant-wide energy consumption by 28 million kilowatt hours (kWh) of electricity and 26,000 million...

  19. Thermo-electrically pumped semiconductor light emitting diodes

    E-Print Network [OSTI]

    Santhanam, Parthiban

    2014-01-01T23:59:59.000Z

    Thermo-electric heat exchange in semiconductor light emitting diodes (LEDs) allows these devices to emit optical power in excess of the electrical power used to drive them, with the remaining power drawn from ambient heat. ...

  20. Conductive layer for biaxially oriented semiconductor film growth

    DOE Patents [OSTI]

    Findikoglu, Alp T. (Los Alamos, NM); Matias, Vladimir (Santa Fe, NM)

    2007-10-30T23:59:59.000Z

    A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

  1. Printable semiconductor structures and related methods of making and assembling

    DOE Patents [OSTI]

    Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

    2010-09-21T23:59:59.000Z

    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  2. Printable semiconductor structures and related methods of making and assembling

    DOE Patents [OSTI]

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

    2013-03-12T23:59:59.000Z

    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  3. Printable semiconductor structures and related methods of making and assembling

    DOE Patents [OSTI]

    Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Tokyo, JP); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Westmont, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Rapid City, SD); Ko, Heung Cho (Urbana, IL); Mack, Shawn (Goleta, CA)

    2011-10-18T23:59:59.000Z

    The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

  4. Composition/bandgap selective dry photochemical etching of semiconductor materials

    DOE Patents [OSTI]

    Ashby, C.I.H.; Dishman, J.L.

    1985-10-11T23:59:59.000Z

    Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  5. Improving reuse of semiconductor equipment through benchmarking, standardization, and automation

    E-Print Network [OSTI]

    Silber, Jacob B. (Jacob Bradley)

    2006-01-01T23:59:59.000Z

    The 6D program at Intel Corporation was set up to improve operations around capital equipment reuse, primarily in their semiconductor manufacturing facilities. The company was faced with a number of challenges, including ...

  6. Linewidth enhancement factor. cap alpha. in semiconductor injection lasers

    SciTech Connect (OSTI)

    Vahala, K.; Chiu, L.C.; Margalit, S.; Yariv, A.

    1983-04-15T23:59:59.000Z

    A simple model for the linewidth enhancement factor ..cap alpha.. and its frequency dependence in semiconductor lasers is presented. Calculations based on this model are in reasonable agreement with experimental results.

  7. Ultrafast optical studies of electronic dynamics in semiconductors

    E-Print Network [OSTI]

    Ruzicka, Brian Andrew

    2012-05-31T23:59:59.000Z

    to their limited temporal resolution, electron measurement techniques cannot be used to study these processes on time scales in which the carrier-lattice system is not in equilibrium. However, in contemporary semiconductor devices with nanometer dimensions...

  8. Charge and magnetization inhomogeneities in diluted magnetic semiconductors

    E-Print Network [OSTI]

    Timm, Carsten

    2006-03-01T23:59:59.000Z

    It is predicted that III-V diluted magnetic semiconductors can exhibit stripelike modulations of magnetization and carrier concentration. This inhomogeneity results from the strong dependence of the magnetization on the carrier concentration. Within...

  9. Translating semiconductor device physics into nanoparticle films for electronic applications

    E-Print Network [OSTI]

    Wanger, Darcy Deborah

    2014-01-01T23:59:59.000Z

    This thesis explores and quantifies some of the important device physics, parameters, and mechanisms of semiconductor nanocrystal quantum dot (QD) electronic devices, and photovoltaic devices in particular. This involves ...

  10. Semiconductor nanocrystals : synthesis, mechanisms of formation, and applications in biology

    E-Print Network [OSTI]

    Allen, Peter M. (Peter Matthew)

    2010-01-01T23:59:59.000Z

    The primary focus of this thesis is the synthesis and applications of semiconductor nanocrystals, or quantum dots (QDs). Novel synthetic routes to ternary 1-III-VI QDs are presented, and we report the first highly luminescent ...

  11. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  12. Semiconductor Quantum Rods as Single Molecule Fluorescent Biological Labels

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    A. , Gu, W. , Larabell, C. & Alivisatos, A.P. SemiconductorHu, J.T. , Yang, W.D. & Alivisatos, A.P. Band gap variationZanchet, D. , Weiss, S. , ,Alivisatos, A. P. Synthesis and

  13. Semiconductor nanowire array: potential substrates for photocatalysis and photovoltaics

    E-Print Network [OSTI]

    Yang, Peidong

    Semiconductor nanowire array: potential substrates for photocatalysis and photovoltaics Yiying Wu, these nanowire arrays could find unique applications in photocatalysis and photovoltaics. KEY WORDS luminescence efficiency [5,6], enhancement of thermoelectric figure of merit [7] and lowered lasing threshold

  14. Ultrafast nonlinear optical properties of passive and active semiconductor devices

    E-Print Network [OSTI]

    Motamedi, Ali Reza

    2011-01-01T23:59:59.000Z

    Nonlinear optical properties and ultrafast carrier dynamics of slab-coupled optical waveguide amplifiers, silicon nanowaveguides, and III-V semiconductor saturable Bragg reflectors are studied. The limits imposed by two ...

  15. Femtosecond time-resolved photoemission electron microscopy for spatiotemporal imaging of photogenerated carrier dynamics in semiconductors

    SciTech Connect (OSTI)

    Fukumoto, Keiki, E-mail: fukumoto.k.ab@m.titech.ac.jp; Yamada, Yuki; Matsuki, Takashi; Koshihara, Shin-ya [Department of Materials Science, Tokyo Institute of Technology, Oookayama, Meguro-ku, Tokyo 152-8550 (Japan); Japan Science and Technology Agency JST-CREST, Honcho, Kawaguchi, Saitama 332-0012 (Japan); Onda, Ken [Interactive Research Center of Science, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan); Japan Science and Technology Agency JST-PRESTO, Honcho, Kawaguchi, Saitama 332-0012 (Japan); Mukuta, Tatsuhiko; Tanaka, Sei-ichi [Department of Materials Science, Tokyo Institute of Technology, Oookayama, Meguro-ku, Tokyo 152-8550 (Japan)

    2014-08-15T23:59:59.000Z

    We constructed an instrument for time-resolved photoemission electron microscopy (TR-PEEM) utilizing femtosecond (fs) laser pulses to visualize the dynamics of photogenerated electrons in semiconductors on ultrasmall and ultrafast scales. The spatial distribution of the excited electrons and their relaxation and/or recombination processes were imaged by the proposed TR-PEEM method with a spatial resolution about 100 nm and an ultrafast temporal resolution defined by the cross-correlation of the fs laser pulses (240 fs). A direct observation of the dynamical behavior of electrons on higher resistivity samples, such as semiconductors, by TR-PEEM has still been facing difficulties because of space and/or sample charging effects originating from the high photon flux of the ultrashort pulsed laser utilized for the photoemission process. Here, a regenerative amplified fs laser with a widely tunable repetition rate has been utilized, and with careful optimization of laser parameters, such as fluence and repetition rate, and consideration for carrier lifetimes, the electron dynamics in semiconductors were visualized. For demonstrating our newly developed TR-PEEM method, the photogenerated carrier lifetimes around a nanoscale defect on a GaAs surface were observed. The obtained lifetimes were on a sub-picosecond time scale, which is much shorter than the lifetimes of carriers observed in the non-defective surrounding regions. Our findings are consistent with the fact that structural defects induce mid-gap states in the forbidden band, and that the electrons captured in these states promptly relax into the ground state.

  16. Differential method of analysis of luminescence spectra of semiconductors

    SciTech Connect (OSTI)

    Emel'yanov, A. M., E-mail: Emelyanov@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

    2010-09-15T23:59:59.000Z

    A method for analyzing the luminescence spectra of semiconductors is suggested. The method is based on differentiation of the spectra. The potentialities of the method are demonstrated for luminescence in the region of the fundamental absorption edge of Si and SiGe alloy single crystals. The method is superior in accuracy to previously known luminescence methods of determining the band gap of indirect-gap semiconductors and practically insensitive to different conditions of outputting radiation from the sample.

  17. Al-doped HfO2/In0.53Ga0.47As metal-oxide-semiconductor capaci

    E-Print Network [OSTI]

    Stemmer, Susanne

    2011-01-01T23:59:59.000Z

    MOS (Metal Oxide Semiconductor) Phys- ics and Technologywas funded by the Semiconductor Re- search Corporation0.47 As metal-oxide-semiconductor capacitors Yoontae Hwang,

  18. Reconditioning of semiconductor substrates to remove photoresist during semiconductor device fabrication

    DOE Patents [OSTI]

    Farino, Anthony J.

    2004-01-27T23:59:59.000Z

    A method for reconditioning the surface of a semiconductor substrate to remove an unwanted (i.e. defective) layer of photoresist is disclosed. The method adapts a conventional automated spinner which is used to rotate the substrate at high speed while a stream of a first solvent (e.g. acetone) is used to dissolve the photoresist. A stream of a second solvent (e.g. methanol) is then used to clean the substrate at a lower speed, with the substrate being allowed to dry with continued rotation. The method of the present invention can be used within a photolithography track so that the substrates need never leave the track for reconditioning.

  19. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Patents [OSTI]

    Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

    2008-01-01T23:59:59.000Z

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) an affinity molecule linked to the semiconductor nanocrystal. The semiconductor nanocrystal is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Exposure of the semiconductor nanocrystal to excitation energy will excite the semiconductor nanocrystal causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  20. Characterization and electrical modeling of semiconductors bridges

    SciTech Connect (OSTI)

    Marx, K.D. [Sandia National Labs., Livermore, CA (United States); Bickes, R.W. Jr.; Wackerbarth, D.E. [Sandia National Labs., Albuquerque, NM (United States)

    1997-03-01T23:59:59.000Z

    Semiconductor bridges (SCBs) are finding increased use as initiators for explosive and pyrotechnic devices. They offer advantages in reduced voltage and energy requirements, coupled with excellent safety features. The design of explosive systems which implement either SCBs or metal bridgewires can be facilitated through the use of electrical simulation software such as the PSpice{reg_sign} computer code. A key component in the electrical simulation of such systems is an electrical model of the bridge. This report has two objectives: (1) to present and characterize electrical data taken in tests of detonators which employ SCBs with BNCP as the explosive powder; and (2) to derive appropriate electrical models for such detonators. The basis of such models is a description of the resistance as a function of energy deposited in the SCB. However, two important features which must be added to this are (1) the inclusion of energy loss through such mechanisms as ohmic heating of the aluminum lands and heat transfer from the bridge to the surrounding media; and (2) accounting for energy deposited in the SCB through heat transfer to the bridge from the explosive powder after the powder ignites. The modeling procedure is entirely empirical; i.e., models for the SCB resistance and the energy gain and loss have been estimated from experimental data taken over a range of firing conditions. We present results obtained by applying the model to the simulation of SCB operation in representative tests.

  1. Competing interactions in semiconductor quantum dots

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    van den Berg, R.; Brandino, G. P.; El Araby, O.; Konik, R. M.; Gritsev, V.; Caux, J. -S.

    2014-10-01T23:59:59.000Z

    We introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions at longer times. Onmorethe contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.less

  2. Competing interactions in semiconductor quantum dots

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    van den Berg, R. [Univ. of Amsterdam (Netherlands). Inst. for Theoretical Physics; Brandino, G. P. [Univ. of Amsterdam (Netherlands). Inst. for Theoretical Physics; El Araby, O. [Univ. of Amsterdam (Netherlands). Inst. for Theoretical Physics; Konik, R. M. [Brookhaven National Lab. (BNL), Upton, NY (United States); Gritsev, V. [Univ. of Amsterdam (Netherlands). Inst. for Theoretical Physics; Caux, J. -S. [Univ. of Amsterdam (Netherlands). Inst. for Theoretical Physics

    2014-10-01T23:59:59.000Z

    We introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions at longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.

  3. DFAS Wide-Area Workflow Issues

    Broader source: Energy.gov [DOE]

    Presentation covers the DFAS wide-area workflow issues and is given at the Spring 2011 Federal Utility Partnership Working Group (FUPWG) meeting.

  4. Development of epitaxial AlxSc1-xN for artificially structured metal/semiconductor superlattice metamaterials

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sands, Timothy D.; Stach, Eric A.; Saha, Bivas; Saber, Sammy; Naik, Gururaj V.; Boltasseva, Alexandra; Kvam, Eric P.

    2015-02-01T23:59:59.000Z

    Epitaxial nitride rocksalt metal/semiconductor superlattices are emerging as a novel class of artificially structured materials that have generated significant interest in recent years for their potential application in plasmonic and thermoelectric devices. Though most nitride metals are rocksalt, nitride semiconductors in general have hexagonal crystal structure. We report rocksalt aluminum scandium nitride (Al,Sc)N alloys as the semiconducting component in epitaxial rocksalt metal/semiconductor superlattices. The AlxSc1?xN alloys when deposited directly on MgO substrates are stabilized in a homogeneous rocksalt (single) phase when x?morehas been extended to x?xSc1?xN alloys show moderate direct bandgap bowing with a bowing parameter, B?=?1.41??0.19?eV. The direct bandgap of metastable rocksalt AlN is extrapolated to be 4.70??0.20?eV. The tunable lattice parameter, bandgap, dielectric permittivity, and electronic properties of rocksalt AlxSc1?xN alloys enable high quality epitaxial rocksalt metal/AlxSc1?xN superlattices with a wide range of accessible metamaterials properties.less

  5. New Diluted Ferromagnetic Semiconductor isostructural to 122 type iron pnictide superconductor with TC up to 180 K

    E-Print Network [OSTI]

    K. Zhao; Z. Deng; X. C. Wang; W. Han; J. L. Zhu; X. Li; Q. Q. Liu; R. C. Yu; T. Goko; B. Frandsen; Lian Liu; Fanlong Ning; Y. J. Uemura; H. Dabkowska; G. M. Luke; H. Luetkens; E. Morenzoni; S. R. Dunsiger; A. Senyshyn; P. Bni; C. Q. Jin

    2013-03-28T23:59:59.000Z

    Diluted magnetic semiconductors (DMS) have received much attention due to its potential applications to spintronics devices. A prototypical system (Ga,Mn)As has been widely studied since 1990s. The simultaneous spin and charge doping via hetero-valence (Ga3+,Mn2+) substitution, however, resulted in severely limited solubility without availability of bulk specimens. Previously we synthesized a new diluted ferromagnetic semiconductor of bulk Li(Zn,Mn)As with Tc up to 50K, where isovalent (Zn,Mn) spin doping was separated from charge control via Li concentrations. Here we report the synthesis of a new diluted ferromagnetic semiconductor (Ba1-xKx)(Zn1-yMny)2As2, isostructural to iron 122 system, where holes are doped via (Ba2+, K1+), while spins via (Zn2+,Mn2+) substitutions. Bulk samples with x=0.1-0.3 and y=0.05-0.15 exhibit ferromagnetic order with TC up to 180K, comparable to that of record high Tc for Ga(MnAs), significantly enhanced than Li(Zn,Mn)As. Moreover the (Ba,K)(Zn,Mn)2As2 shares the same 122 crystal structure with semiconducting BaZn2As2, antiferromagnetic BaMn2As2, and superconducting (Ba,K)Fe2As2, which makes them promising to the development of multilayer functional devices.

  6. Leadership, Organizations

    E-Print Network [OSTI]

    Palmeri, Thomas

    Leadership, Policy & Organizations #12;2 At Peabody students have the opportunity to develop new College, in the Department of Leadership, Policy and Organizations (LPO). The faculty believes Patricia and Rodes Hart Chair, and Professor of Education Policy and Leadership, Ellen Goldring also serves

  7. Low Power, Red, Green and Blue Carbon Nanotube Enabled Vertical Organic Light Emitting Transistors for Active Matrix OLED Displays

    SciTech Connect (OSTI)

    McCarthy, M. A. [University of Florida, Gainesville; Liu, B. [University of Florida, Gainesville; Donoghue, E. P. [University of Florida, Gainesville; Kravchenko, Ivan I [ORNL; Kim, D. Y. [University of Florida, Gainesville; So, Franky [University of Florida, Gainesville; Rinzler, A. G. [University of Florida, Gainesville

    2011-01-01T23:59:59.000Z

    Organic semiconductors are potential alternatives to polycrystalline silicon as the semiconductor used in the backplane of active matrix organic light emitting diode displays. Demonstrated here is a light-emitting transistor with an organic channel, operating with low power dissipation at low voltage, and high aperture ratio, in three colors: red, green and blue. The single-wall carbon nanotube network source electrode is responsible for the high level of performance demonstrated. A major benefit enabled by this architecture is the integration of the drive transistor, storage capacitor and light emitter into a single device. Performance comparable to commercialized polycrystalline-silicon TFT driven OLEDs is demonstrated.

  8. Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors

    SciTech Connect (OSTI)

    Lyons, J. L.; Janotti, A.; Van de Walle, C. G. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2014-01-07T23:59:59.000Z

    We examine how hole localization limits the effectiveness of substitutional acceptors in oxide and nitride semiconductors and explain why p-type doping of these materials has proven so difficult. Using hybrid density functional calculations, we find that anion-site substitutional impurities in AlN, GaN, InN, and ZnO lead to atomic-like states that localize on the impurity atom itself. Substitution with cation-site impurities, on the other hand, triggers the formation of polarons that become trapped on nearest-neighbor anions, generally leading to large ionization energies for these acceptors. Unlike shallow effective-mass acceptors, these two types of deep acceptors couple strongly with the lattice, significantly affecting the optical properties and severely limiting prospects for achieving p-type conductivity in these wide-band-gap materials.

  9. Effective Community-Wide Policy Technical Assistance

    E-Print Network [OSTI]

    Effective Community-Wide Policy Technical Assistance: The DOE/NREL Approach NREL is a national: The DOE/NREL Approach Effective Community-Wide Policy Technical Assistance: The DOE/NREL Approach HelpingVoss, Sarah Busche, Eric Lantz, Lynn Billman, and Dan Beckley. The layout and technical editing were

  10. Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film

    E-Print Network [OSTI]

    Deng, Xunming

    Analytical model for the optical functions of amorphous semiconductors from the near functions of thin film semiconductors are useful for two important purposes, namely, materials, reflectance, and ellipso- metric spectra obtained on the thin film semiconductors. The conventional analysis

  11. High-density organic light emitting diodes by nanoimprint technology Krutarth Trivedi, Caleb Nelson, Li Tao, Mathew Goeckner, Walter Hua)

    E-Print Network [OSTI]

    Hu, Wenchuang "Walter"

    High-density organic light emitting diodes by nanoimprint technology Krutarth Trivedi, Caleb Nelson sources. Despite the considerable development of inorganic semiconductor based light emitting diodes of miniaturization to nanoscale. Organic light emitting diode (OLED) technology is immune to quantum confinement

  12. Beyond modulation doping: Engineering a semiconductor to be ambipolar, or making an ON-OFF-ON transistor

    SciTech Connect (OSTI)

    Gupta, K. Das, E-mail: kdasgupta@phy.iitb.ac.in [Department of Physics, Indian Institute of Technology Bombay, Mumbai-400076 (India); Croxall, A. F.; Zheng, B.; Sfigakis, F.; Farrer, I.; Nicoll, C. A.; Beere, H. E.; Ritchie, D. A. [Semiconductor Physics Group, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom)

    2014-04-24T23:59:59.000Z

    Semiconductors are traditionaly either p-type or n-type, meaning that the mobile charge carriers in them are either 'holes' in the valence band or electrons in the conduction band. Ambipolar conduction implies that the experimenter should be able to populate the same channel with either electrons or holes in a controlled manner. This has been shown to be possible in newer materials like Graphene and some organic semiconductors. 'Ambipolarity' can open up new device possibilities as well as new ways to study fundamental scattering mechanisms in semiconductors. However, achieving this in a conventional high mobility structure like a GaAs-AlGaAs heterostructure/quantum well requires new thinking. It was realized, that to do this modulation doping must be given up and techniques to make an undoped heterostructure conduct, must be developed first. Such structures have been developed by only a few groups worldwide. They are of great interest to low temperature physicists working with Quantum Hall states and mesoscopic/nano structures in the ballistic regime. We discuss the reason behind this interest and the analysis of scattering mechanisms in such structures. Finally very recent experimental success in developing fully gate controlled ambipolar structures where both electron and hole mobilites exceed 1 million cm{sup 2}/Vs at low temperatures (T?1Kelvin) are discussed. Such gated ambipolar structures can be used to analyse scattering mechanisms in ultra-high mobility 2dimensional electron and hole gases in a way that is not possible using other techniques.

  13. Disordered electronic and magnetic systems - transition metal (Mn) and rare earth (Gd) doped amorphous group IV semiconductors (C, Si, Ge)

    E-Print Network [OSTI]

    Zeng, Li

    2007-01-01T23:59:59.000Z

    magnetic semiconductors: the europium chalcogenides. Phys.Classic examples are europium chalcogenides [3], Gd 3?x ? xmagnetic semiconductor europium chalcogenides, where the

  14. Organic Superconductors

    SciTech Connect (OSTI)

    Charles Mielke

    2009-02-27T23:59:59.000Z

    Intense magnetic fields are an essential tool for understanding layered superconductors. Fundamental electronic properties of organic superconductors are revealed in intense (60 tesla) magnetic fields. Properties such as the topology of the Fermi surface and the nature of the superconducting order parameter are revealed. With modest maximum critical temperatures~13K the charge transfer salt organic superconductors prove to be incredibly valuable materials as their electronically clean nature and layered (highly anisotropic) structures yield insights to the high temperature superconductors. Observation of de Haas-van Alphen and Shubnikov-de Haas quantum oscillatory phenomena, magnetic field induced superconductivity and re-entrant superconductivity are some of the physical phenomena observed in the charge transfer organic superconductors. In this talk, I will discuss the nature of organic superconductors and give an overview of the generation of intense magnetic fields; from the 60 tesla millisecond duration to the extreme 1000 tesla microsecond pulsed magnetic fields.

  15. Sample size requirements for estimating effective dose from computed tomography using solid-state metal-oxide-semiconductor field-effect transistor dosimetry

    SciTech Connect (OSTI)

    Trattner, Sigal [Department of Medicine, Division of Cardiology, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York 10032 (United States)] [Department of Medicine, Division of Cardiology, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York 10032 (United States); Cheng, Bin [Department of Biostatistics, Columbia University Mailman School of Public Health, New York, New York 10032 (United States)] [Department of Biostatistics, Columbia University Mailman School of Public Health, New York, New York 10032 (United States); Pieniazek, Radoslaw L. [Center for Radiological Research, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York 10032 (United States)] [Center for Radiological Research, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York 10032 (United States); Hoffmann, Udo [Department of Radiology, Massachusetts General Hospital and Harvard Medical School, Boston, Massachusetts 02114 (United States)] [Department of Radiology, Massachusetts General Hospital and Harvard Medical School, Boston, Massachusetts 02114 (United States); Douglas, Pamela S. [Department of Medicine, Division of Cardiology, Duke University, Durham, North Carolina 27715 (United States)] [Department of Medicine, Division of Cardiology, Duke University, Durham, North Carolina 27715 (United States); Einstein, Andrew J., E-mail: andrew.einstein@columbia.edu [Department of Medicine, Division of Cardiology, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York and Department of Radiology, Columbia University Medical Center and New York-Presbyterian Hospital, New York, New York (United States)

    2014-04-15T23:59:59.000Z

    Purpose: Effective dose (ED) is a widely used metric for comparing ionizing radiation burden between different imaging modalities, scanners, and scan protocols. In computed tomography (CT), ED can be estimated by performing scans on an anthropomorphic phantom in which metal-oxide-semiconductor field-effect transistor (MOSFET) solid-state dosimeters have been placed to enable organ dose measurements. Here a statistical framework is established to determine the sample size (number of scans) needed for estimating ED to a desired precision and confidence, for a particular scanner and scan protocol, subject to practical limitations. Methods: The statistical scheme involves solving equations which minimize the sample size required for estimating ED to desired precision and confidence. It is subject to a constrained variation of the estimated ED and solved using the Lagrange multiplier method. The scheme incorporates measurement variation introduced both by MOSFET calibration, and by variation in MOSFET readings between repeated CT scans. Sample size requirements are illustrated on cardiac, chest, and abdomenpelvis CT scans performed on a 320-row scanner and chest CT performed on a 16-row scanner. Results: Sample sizes for estimating ED vary considerably between scanners and protocols. Sample size increases as the required precision or confidence is higher and also as the anticipated ED is lower. For example, for a helical chest protocol, for 95% confidence and 5% precision for the ED, 30 measurements are required on the 320-row scanner and 11 on the 16-row scanner when the anticipated ED is 4 mSv; these sample sizes are 5 and 2, respectively, when the anticipated ED is 10 mSv. Conclusions: Applying the suggested scheme, it was found that even at modest sample sizes, it is feasible to estimate ED with high precision and a high degree of confidence. As CT technology develops enabling ED to be lowered, more MOSFET measurements are needed to estimate ED with the same precision and confidence.

  16. Spin-polarized lasing in a highly photoexcited semiconductor microcavity

    E-Print Network [OSTI]

    Hsu, Feng-kuo; Lee, Yi-Shan; Lin, Sheng-Di; Lai, Chih-Wei

    2015-01-01T23:59:59.000Z

    Lasing in semiconductors is generally independent of the spins of electrons and holes, which constitute the gain medium. However, in a few spin-controlled lasers, spin-polarized carriers with long spin relaxation times ($\\sim$1 ns) result in continuous or sub-nanosecond pulsed circularly polarized stimulated emission. In these spin-controlled semiconductor lasers, a spin-imbalanced population inversion has been considered necessary. Here, we demonstrate room-temperature spin-polarized ultrafast ($\\sim$10 ps) lasing in a highly optically excited GaAs microcavity embedded with InGaAs multiple quantum wells within which the spin relaxation time is less than 10 ps. The laser radiation remains highly circularly polarized even when excited by \\emph{nonresonant} \\emph{elliptically} polarized light. In contrast to conventional semiconductor lasers, it exhibits a nonlinear input-output relation, energy shifts, and spectral broadening as a function of the photoexcited density. Such spin-polarized lasing is attributed t...

  17. Efficient semiconductor light-emitting device and method

    DOE Patents [OSTI]

    Choquette, Kent D. (Albuquerque, NM); Lear, Kevin L. (Albuquerque, NM); Schneider, Jr., Richard P. (Albuquerque, NM)

    1996-01-01T23:59:59.000Z

    A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

  18. Efficient semiconductor light-emitting device and method

    DOE Patents [OSTI]

    Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

    1996-02-20T23:59:59.000Z

    A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

  19. OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

    SciTech Connect (OSTI)

    Grant, C D; Zhang, J Z

    2007-09-28T23:59:59.000Z

    This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

  20. Wavelength-resonant surface-emitting semiconductor laser

    DOE Patents [OSTI]

    Brueck, Steven R. J. (Albuquerque, NM); Schaus, Christian F. (Albuquerque, NM); Osinski, Marek A. (Albuquerque, NM); McInerney, John G. (Cedar Crest, NM); Raja, M. Yasin A. (Albuquerque, NM); Brennan, Thomas M. (Albuquerque, NM); Hammons, Burrell E. (Tijeras, NM)

    1989-01-01T23:59:59.000Z

    A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

  1. Adaptive feedback control of ultrafast semiconductor nonlinearities J. Kunde,a)

    E-Print Network [OSTI]

    Keller, Ursula

    that adaptive feedback optical pulse shaping can be used to control ultrafast semiconductor nonlinearities insight into the interaction of semiconduc- tors and ultrafast optical pulses. Specifically, we develop spectroscopy. More- over, the optimized pulse shape can substantially enhance ultrafast semiconductor

  2. Semiconductor wire array structures, and solar cells and photodetectors based on such structures

    DOE Patents [OSTI]

    Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

    2014-08-19T23:59:59.000Z

    A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

  3. Coherence Optimization of Vertical Cavity Semiconductor Optical Michael Snchez*a

    E-Print Network [OSTI]

    Esener, Sadik C.

    Coherence Optimization of Vertical Cavity Semiconductor Optical Amplifiers Michael Snchez Dept., University of California - San Diego ABSTRACT Vertical cavity semiconductor optical amplifiers (VCSOAs) are attractive devices for use in coherent optical amplification, especially where 2-D amplifier

  4. Fluorine doping in dilute magnetic semiconductor Sn1xFexO2...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fluorine doping in dilute magnetic semiconductor Sn1xFexO2. Fluorine doping in dilute magnetic semiconductor Sn1xFexO2. Abstract: Recent studies have reported...

  5. Optimization of Preventive Maintenance Scheduling in Semiconductor Manufacturing Models Using a Simulation-Based Approximate

    E-Print Network [OSTI]

    Fernandez, Emmanuel

    Optimization of Preventive Maintenance Scheduling in Semiconductor Manufacturing Models Using Dynamic Programming (ADP) approach for the optimization of Preventive Maintenance (PM) scheduling schedules. I. INTRODUCTION In semiconductor manufacturing systems, or fabs, pre- ventive maintenance (PM

  6. Statistical Algorithms for Simulation of Electron Quantum Kinetics in Semiconductors -Part II

    E-Print Network [OSTI]

    Whitlock, Paula

    Statistical Algorithms for Simulation of Electron Quantum Kinetics in Semiconductors - Part II M describes the relaxation of semiconductor elec- trons initially excited by a laser pulse [1]. The equation

  7. Operations improvement in a semiconductor capital equipment manufacturing plant : component level and assembly level inventory management

    E-Print Network [OSTI]

    Wu, Yiming, M. Eng. Massachusetts Institute of Technology

    2012-01-01T23:59:59.000Z

    Semiconductor capital equipment is manufactured in a high-mix and low-volume environment at Varian Semiconductor Equipment business unit of Applied Materials. Due to the demand growth over the past years, Varian has been ...

  8. Recent advances in solid-state organic lasers

    E-Print Network [OSTI]

    Chenais, Sbastien; 10.1002/pi.3173

    2011-01-01T23:59:59.000Z

    Organic solid-state lasers are reviewed, with a special emphasis on works published during the last decade. Referring originally to dyes in solid-state polymeric matrices, organic lasers also include the rich family of organic semiconductors, paced by the rapid development of organic light emitting diodes. Organic lasers are broadly tunable coherent sources are potentially compact, convenient and manufactured at low-costs. In this review, we describe the basic photophysics of the materials used as gain media in organic lasers with a specific look at the distinctive feature of dyes and semiconductors. We also outline the laser architectures used in state-of-the-art organic lasers and the performances of these devices with regard to output power, lifetime, and beam quality. A survey of the recent trends in the field is given, highlighting the latest developments in terms of wavelength coverage, wavelength agility, efficiency and compactness, or towards integrated low-cost sources, with a special focus on the gr...

  9. Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

    SciTech Connect (OSTI)

    Filippov, V. V., E-mail: wwfilippow@mail.ru [Lipetsk State Pedagogical University (Russian Federation); Bormontov, E. N. [Voronezh State University (Russian Federation)

    2013-07-15T23:59:59.000Z

    A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material's anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors.

  10. Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication

    DOE Patents [OSTI]

    Sopori, Bhushan

    2014-05-27T23:59:59.000Z

    Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

  11. West Wide Programmatic Environmental Impact Statement Record...

    Open Energy Info (EERE)

    Reference LibraryAdd to library Legal Document- OtherOther: West Wide Programmatic Environmental Impact Statement Record of Decision (BLM)Legal Published NA Year Signed or Took...

  12. GWIDD: Genome-wide protein docking database

    E-Print Network [OSTI]

    Kundrotas, Petras J.; Zhu, Zhengwei; Vasker, Ilya A.

    2009-11-09T23:59:59.000Z

    Structural information on interacting proteins is important for understanding life processes at the molecular level. Genome-wide docking database is an integrated resource for structural studies of proteinprotein interactions on the genome scale...

  13. Low temperature production of large-grain polycrystalline semiconductors

    DOE Patents [OSTI]

    Naseem, Hameed A. (Fayetteville, AR); Albarghouti, Marwan (Loudonville, NY)

    2007-04-10T23:59:59.000Z

    An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

  14. A proposal for Coulomb assisted laser cooling of piezoelectric semiconductors

    SciTech Connect (OSTI)

    Nia, Iman Hassani; Mohseni, Hooman, E-mail: hmohseni@ece.northwestern.edu [Bio-Inspired Sensors and Optoelectronics Laboratory (BISOL), Department of Electrical Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-07-28T23:59:59.000Z

    Anti-Stokes laser cooling of semiconductors as a compact and vibration-free method is very attractive. While it has achieved significant milestones, increasing its efficiency is highly desirable. The main limitation is the lack of the pristine material quality with high luminescence efficiency. Here, we theoretically demonstrate that the Coulomb interaction among electrons and holes in piezoelectric heterostructures could lead to coherent damping of acoustic phonons; rendering a significantly higher efficiency that leads to the possibility of cooling a broad range of semiconductors.

  15. Controlled Chemical Doping of Semiconductor Nanocrystals Using Redox Buffers

    SciTech Connect (OSTI)

    Engel, Jesse H.; Surendranath, Yogesh; Alivisatos, Paul

    2013-07-09T23:59:59.000Z

    Semiconductor nanocrystal solids are attractive materials for active layers in next-generation optoelectronic devices; however, their efficient implementation has been impeded by the lack of precise control over dopant concentrations. Herein we demonstrate a chemical strategy for the controlled doping of nanocrystal solids under equilibrium conditions. Exposing lead selenide nanocrystal thin films to solutions containing varying proportions of decamethylferrocene and decamethylferrocenium incrementally and reversibly increased the carrier concentration in the solid by 2 orders of magnitude from their native values. This application of redox buffers for controlled doping provides a new method for the precise control of the majority carrier concentration in porous semiconductor thin films.

  16. Semiconductor ridge microcavity source of quantum light at room temperature

    E-Print Network [OSTI]

    X. Caillet; A. Orieux; A. Lemaitre; P. Filloux; I. Favero; G. Leo; S. Ducci

    2009-10-31T23:59:59.000Z

    We experimentally demonstrate an integrated semiconductor ridge microcavity source of counterpropagating twin photons at room temperature in the telecom range. Based on parametric down conversion with a counterpropagating phase-matching, pump photons generate photon pairs with an efficiency of about 10^(-11) and a spectral linewidth of 0.3 nm for a 1mm long sample. The indistiguishability of the photons of the pair are measured via a two-photon interference experiment showing a visibility of 85%. This work opens a route towards new guided-wave semiconductor quantum devices.

  17. Entrainment by Spatiotemporal Chaos in Glow Discharge-Semiconductor Systems

    E-Print Network [OSTI]

    Marat Akhmet; Ismail Rafatov; Mehmet Onur Fen

    2014-06-15T23:59:59.000Z

    Entrainment of limit cycles by chaos [1] is discovered numerically through specially designed unidirectional coupling of two glow discharge-semiconductor systems. By utilizing the auxiliary system approach [2], it is verified that the phenomenon is not a chaos synchronization. Simulations demonstrate various aspects of the chaos appearance in both drive and response systems. Chaotic control is through the external circuit equation and governs the electrical potential on the boundary. The expandability of the theory to collectives of glow discharge systems is discussed, and this increases the potential of applications of the results. Moreover, the research completes the previous discussion of the chaos appearance in a glow discharge-semiconductor system [3].

  18. Thin film reactions on alloy semiconductor substrates

    SciTech Connect (OSTI)

    Olson, D.A.

    1990-11-01T23:59:59.000Z

    The interactions between Pt and In{sub .53}Ga{sub .47}As have been studied. In{sub .53}Ga{sub .47}As substrates with 70nm Pt films were encapsulated in SiO{sub 2}, and annealed up to 600{degree}C in flowing forming gas. The composition and morphology of the reaction product phases were studied using x-ray diffraction, Auger depth profiling, and transmission electron microscopy. The reaction kinetics were examined with Rutherford Backscattering. Results show that Pt/In{sub .53}Ga{sub .47}As reacts to form many of the reaction products encountered in the Pt/GaAs and Pt/InP reactions: PtGa, Pt{sub 3}Ga, and PtAs{sub 2}. In addition, a ternary phase, Pt(In:Ga){sub 2}, develops, which is a solid solution between PtIn{sub 2} and PtGa{sub 2}. The amount of Ga in the ternary phase increases with annealing temperature, which causes a decrease in the lattice parameter of the phase. The reaction products show a tendency to form layered structures, especially for higher temperatures and longer annealing times. Unlike the binary case, the PtAs{sub 2}, phase is randomly oriented on the substrate, and is intermingle with a significant amount of Pt(In:Ga){sub 2}. Following Pt/In{sub .53}Ga{sub .47}As reactions, two orientation relationships between the Pt(In:Ga){sub 2} product phase and the substrate were observed, despite the large mismatch with the substrate ({approximately}8%). For many metal/compound semiconductor interactions, the reaction rate is diffusion limited, i.e. exhibits a parabolic dependence on time. An additional result of this study was the development of an In-rich layer beneath the reacted layer. The Auger depth profile showed a substantial increase in the sample at this layer. This is a significant result for the production of ohmic contacts, as the Schottky barrier height in this system lower for higher In concentrations. 216 refs.

  19. Optically Detected Magnetic Resonance Studies on ?-conjugated semiconductor systems

    SciTech Connect (OSTI)

    Chen, Ying

    2011-12-06T23:59:59.000Z

    Optically Detected Magnetic Resonance (ODMR) techniques were used to investigate the dynamics of excitons and charge carriers in ?-conjugated organic semiconductors. Degradation behavior of the negative spin-1/2 electroluminescence-detected magnetic resonance (ELDMR) was observed in Alq3 devices. The increase in the resonance amplitude implies an increasing bipolaron formation during degradation, which might be the result of growth of charge traps in the device. The same behavior of the negative spin-1/2 ELDMR was observed in 2wt% Rubrene doped Tris(8-hydroxyquinolinato)aluminium (Alq3) devices. However, with increasing injection current, a positive spin-1/2 ELDMR, together with positive spin 1 triplet powder patterns at {delta}m{sub S}={+-}1 and {delta}m{sub S}={+-}2, emerges. Due to the similarities in the frequency dependences of single and double modulated ELDMR and the photoluminescence-detected magnetic resonance (PLDMR) results in poly[2-methoxy-5-(2 -ethyl-hexyloxy)-1,4-phenyl ene vinylene] (MEH-PPV) films, the mechanism for this positive spin-1/2 ELDMR was assigned to enhanced triplet-polaron quenching under resonance conditions. The ELDMR in rubrene doped Alq3 devices provides a path to investigate charge distribution in the device under operational conditions. Combining the results of several devices with different carrier blocking properties and the results from transient EL, it was concluded trions not only exist near buffer layer but also exist in the electron transport layer. This TPQ model can also be used to explain the positive spin-1/2 PLDMR in poly(3-hexylthiophene) (P3HT) films at low temperature and in MEH-PPV films at various temperatures up to room temperature. Through quantitative analysis, TE-polaron quenching (TPQ) model is shown having the ability to explain most behaviors of the positive spin-1/2 resonance. Photocurrent detected magnetic resonance (PCDMR) studies on MEH-PPV devices revealed a novel transient resonance signal. The signal may originate from the higher concentration of deep traps near cathode. A quantitative analysis based on this assumption was carried out and found to be consistent with the experimental results.

  20. Building Structural Complexity in Semiconductor Nanocrystals through Chemical Transformations

    SciTech Connect (OSTI)

    Sadtler, Bryce F

    2009-05-20T23:59:59.000Z

    Methods are presented for synthesizing nanocrystal heterostructures comprised of two semiconductor materials epitaxially attached within individual nanostructures. The chemical transformation of cation exchange, where the cations within the lattice of an ionic nanocrystal are replaced with a different metal ion species, is used to alter the chemical composition at specific regions ofa nanocrystal. Partial cation exchange was performed in cadmium sulfide (CdS) nanorods of well-defined size and shape to examine the spatial organization of materials within the resulting nanocrystal heterostructures. The selectivity for cation exchange to take place at different facets of the nanocrystal plays an important role in determining the resulting morphology of the binary heterostructure. The exchange of copper (I) (Cu+) cations in CdS nanorods occurs preferentially at the ends of the nanorods. Theoretical modeling of epitaxial attachments between different facets of CdS and Cu2S indicate that the selectivity for cation exchange at the ends of the nanorods is a result of the low formation energy of the interfaces produced. During silver (I) (Ag+) cation exchange in CdS nanorods, non-selective nucleation of silver sulfide (Ag2S), followed by partial phase segregation leads to significant changes in the spatial arrangement of CdS and Ag2S regions at the exchange reaction proceeds through the nanocrystal. A well-ordered striped pattern of alternating CdS and Ag2S segments is found at intermediate fractions of exchange. The forces mediating this spontaneous process are a combination of Ostwald ripening to reduce the interfacial area along with a strain-induced repulsive interaction between Ag2S segments. To elucidate why Cu+ and Ag+ cation exchange with CdS nanorods produce different morphologies, models for epitaxial attachments between various facets of CdS with Cu2S or Ag2S lattices were used to calculate interface formation energies. The formation energies indicate the favorability for interface nucleation at different facets of the nanorod and the stability of the interfaces during growth of the secondary material (Cu2S or Ag2S) within the CdS nanocrystal. The physical properties of the CdS-Ag2S and CdS-Cu2S binary nanorods are discussed in terms of the electronic structure of their components and the heterostructure morphology.

  1. Metrology-Related Costs in the U.S. Semiconductor Industry,

    E-Print Network [OSTI]

    98-4 Planning Report Metrology-Related Costs in the U.S. Semiconductor Industry, 1990, 1996 Administration #12;Metrology-Related Costs in the U.S. Semiconductor Industry, 1990, 1996 and 2001 NIST Contract Acknowledgements 5 II. Defining Metrology-Related Costs in the Semiconductor Industry 6 A. Physical Measurements

  2. Simulation of a tunable optically pumped terahertz intersubband laser with diluted magnetic semiconductors

    E-Print Network [OSTI]

    Technische Universiteit Delft

    quantum well with a Zn1-xMnxSe diluted magnetic semiconductor barrier is presented. Giant Zeeman splitting in diluted magnetic semiconductors leads to splitting of electronic states, which in turn leads to tunability. INTRODUCTION Diluted magnetic semiconductors DMSs are semicon- ductor alloys partly composed of magnetic

  3. Time-dependent model for diluted magnetic semiconductors including band structure and confinement effects

    E-Print Network [OSTI]

    Boyer, Edmond

    Time-dependent model for diluted magnetic semiconductors including band structure and confinement dynamics in confined diluted magnetic semiconductors induced by laser. The hole-spin relaxation process light-induced magnetization dynamics in ferro- magnetic films and in diluted magnetic semiconductors DMS

  4. Origin of the Variation of Exciton Binding Energy in Semiconductors Marc Dvorak,1

    E-Print Network [OSTI]

    Wu, Zhigang

    Origin of the Variation of Exciton Binding Energy in Semiconductors Marc Dvorak,1 Su-Huai Wei,2, and the exciton binding energy Eb in technologically important semiconductors varies from merely a few me between the electronic band structures and exciton binding energies in semiconductors, employing first

  5. Monte Carlo simulation of electron transport in degenerate and inhomogeneous semiconductors

    E-Print Network [OSTI]

    Monte Carlo simulation of electron transport in degenerate and inhomogeneous semiconductors Mona concentrations up to 1020 cm-3 . De- generate semiconductors are important for thermoelectric and thermionic transport in degenerate semiconductor-based structures. If the electron wavelength is smaller than

  6. PRECISION CLEANING OF SEMICONDUCTOR SURFACES USING CARBON DIOXIDE-BASED FLUIDS

    SciTech Connect (OSTI)

    J. RUBIN; L. SIVILS; A. BUSNAINA

    1999-07-01T23:59:59.000Z

    The Los Alamos National Laboratory, on behalf of the Hewlett-Packard Company, is conducting tests of a closed-loop CO{sub 2}-based supercritical fluid process, known as Supercritical CO{sub 2} Resist Remover (SCORR). We have shown that this treatment process is effective in removing hard-baked, ion-implanted photoresists, and appears to be fully compatible with metallization systems. We are now performing experiments on production wafers to assess not only photoresist removal, but also residual surface contamination due to particulate and trace metals. Dense-phase (liquid or supercritical) CO{sub 2}, since it is non-polar, acts like an organic solvent and therefore has an inherently high volubility for organic compounds such as oils and greases. Also, dense CO{sub 2} has a low-viscosity and a low dielectric constant. Finally, CO{sub 2} in the liquid and supercritical fluid states can solubilize metal completing agents and surfactants. This combination of properties has interesting implications for the removal not only of organic films, but also trace metals and inorganic particulate. In this paper we discuss the possibility of using CO{sub 2} as a precision-cleaning solvent, with particular emphasis on semiconductor surfaces.

  7. Terahertz surface plasmon polaritons on a semiconductor surface structured with

    E-Print Network [OSTI]

    Murphy, Thomas E.

    Terahertz surface plasmon polaritons on a semiconductor surface structured with periodic V-doped silicon surface, using anisotropic wet-etching of crystalline silicon, thereby forming a plasmonic surfaces. 2013 Optical Society of America OCIS codes: (240.6680) Surface plasmons; (240.6690) Surface

  8. Method for altering the luminescence of a semiconductor

    DOE Patents [OSTI]

    Barbour, J.C.; Dimos, D.B.

    1999-01-12T23:59:59.000Z

    A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region. 4 figs.

  9. IntroductiontoPowerSuppliesAN-556 National Semiconductor

    E-Print Network [OSTI]

    Paderborn, Universitt

    TL G 10061 IntroductiontoPowerSuppliesAN-556 National Semiconductor Application Note 556 Ralph E ripple voltage to capacitor C1 The bridge rectifier circuit has a simple transformer but current must in a full-wave bridge for the same input voltage TL G 100611 FIGURE 1 Idealized Power Supply TL G 10061

  10. Metal-doped semiconductor nanoparticles and methods of synthesis thereof

    DOE Patents [OSTI]

    Ren, Zhifeng (Newton, MA); Chen, Gang (Carlisle, MA); Poudel, Bed (West Newton, MA); Kumar, Shankar (Newton, MA); Wang, Wenzhong (Beijing, CN); Dresselhaus, Mildred (Arlington, MA)

    2009-09-08T23:59:59.000Z

    The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

  11. Hydrogen in compound semiconductors M. D. McCluskeya)

    E-Print Network [OSTI]

    McCluskey, Matthew

    Hydrogen in compound semiconductors M. D. McCluskeya) and N. M. Johnson Xerox Palo Alto Research Center, Palo Alto, California 94304 Received 9 October 1998; accepted 18 December 1998 Hydrogen can consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease

  12. Mutually injecting semiconductor lasers: simulations for short and zero delay

    E-Print Network [OSTI]

    Wnsche, Hans-Jrgen "Ede"

    Mutually injecting semiconductor lasers: simulations for short and zero delay Nikolay Korneyev a und Stochastik, Mohrenstr. 39, 10117 Berlin, Germany ABSTRACT Distant lasers with mutual optical the relaxation oscillation period. In order to illuminate the role of these short delays, the ultimate zero

  13. Method for altering the luminescence of a semiconductor

    DOE Patents [OSTI]

    Barbour, J. Charles (Albuquerque, NM); Dimos, Duane B. (Albuquerque, NM)

    1999-01-01T23:59:59.000Z

    A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region.

  14. Control of mutual phase locking of monolithically integrated semiconductor lasers

    SciTech Connect (OSTI)

    Kapon, E.; Katz, J.; Lindsey, C.; Margalit, S.; Yariv, A.

    1983-09-01T23:59:59.000Z

    The mutual coherence of two coupled semiconductor lasers is investigated experimentally. It is demonstrated that by varying the gain in the overlap region, the degree of phase coherence can be continuously controlled. The quantitative characterization of the degree of phase coherence by fringe visibility is demonstrated.

  15. Phase-locked arrays of unstable resonator semiconductor lasers

    SciTech Connect (OSTI)

    Salzman, J.; Yariv, A.

    1986-08-25T23:59:59.000Z

    A phase-locked array of several unstable resonator semiconductor lasers is demonstrated. Single lateral mode was obtained for currents I-italic<2.5I-italic/sub th/, and partial spatial coherence for I-italic< or =5I-italic/sub th/, with an optical output power of 0.95 W.

  16. Supermode control in diffraction-coupled semiconductor laser arrays

    SciTech Connect (OSTI)

    Mehuys, D.; Mitsunaga, K.; Eng, L.; Marshall, W.K.; Yariv, A.

    1988-09-26T23:59:59.000Z

    Supermode control is demonstrated theoretically and experimentally in diffraction-coupled semiconductor laser arrays. A linear theory is presented to determine the supermode threshold gain as a function of the coupling cavity length. By fabricating devices with different coupling cavity lengths, array operation in both the fundamental and highest order supermodes is achieved.

  17. (Electron transfer rates at semiconductor/liquid interfaces)

    SciTech Connect (OSTI)

    Lewis, N.S.

    1992-01-01T23:59:59.000Z

    Work has focused on several aspects of the fundamental chemistry and physics semiconductor/liquid junction behavior. These projects have been directed primarily towards GaAs/liquid contacts, because GaAs/liquid systems provide high energy conversion efficiencies and offer an opportunity to gain mechanistic understanding of the factors that are important to control in an efficient photoelectrochemical energy conversion system.

  18. [Electron transfer rates at semiconductor/liquid interfaces]. Progress report

    SciTech Connect (OSTI)

    Lewis, N.S.

    1992-08-01T23:59:59.000Z

    Work has focused on several aspects of the fundamental chemistry and physics semiconductor/liquid junction behavior. These projects have been directed primarily towards GaAs/liquid contacts, because GaAs/liquid systems provide high energy conversion efficiencies and offer an opportunity to gain mechanistic understanding of the factors that are important to control in an efficient photoelectrochemical energy conversion system.

  19. FLUID MECHANICS AND HEAT TRANSFER OF ELECTRON FLOW IN SEMICONDUCTORS

    E-Print Network [OSTI]

    Sen, Mihir

    = heat, f = LO-mode, g = LO, h = LA-mode, i = negligible, j = remote heat sink 7/ 70 #12;Heat conductionFLUID MECHANICS AND HEAT TRANSFER OF ELECTRON FLOW IN SEMICONDUCTORS Mihir Sen Department · Shallow water analogy · Vorticity dynamics · Linear stability analysis · Numerical simulations of heat

  20. Theory and Design of Smith-Purcell Semiconductor Terahertz Sources

    E-Print Network [OSTI]

    Smith, Don DeeWayne

    2013-12-06T23:59:59.000Z

    difficulties reaching the THz, and no THz device of any type operates on the full range at room temperature. This dissertation proposes a novel semiconductor source which utilizes the transferred-electron (Gunn) effect and the Smith-Purcell effect to operate...

  1. High Gain, High Efficiency Vertical-Cavity Semiconductor Optical Amplifiers

    E-Print Network [OSTI]

    Bowers, John

    -cavity semiconductor optical amplifiers (VCSOAs) are interesting devices for applications such as wavelength selective coupling efficiency to optical fiber (yielding a low noise figure), small form factor, and the potential of fabricating high-density 2D arrays on wafer. Furthermore, the vertical-cavity design is compatible with low

  2. Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles

    E-Print Network [OSTI]

    Bowers, John

    Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles J. M, mobility, and Seebeck coefficient of these materials and discuss their potential for use in thermoelectric on thermoelectric materials has focused on the ability of heterostructures and quantum con- finement to increase

  3. Dielectric function of diluted magnetic semiconductors in the infrared regime

    E-Print Network [OSTI]

    Aguado, R.; Lopez-Sancho, MP; Sinova, Jairo; Brey, L.

    2004-01-01T23:59:59.000Z

    We present a study of the dielectric function of metallic (III,Mn)V diluted magnetic semiconductors in the infrared regime. Our theoretical approach is based on the kinetic exchange model for carrier induced (III,Mn)V ferromagnetism. The dielectric...

  4. Timing jitter in passively mode-locked semiconductor lasers

    E-Print Network [OSTI]

    Pimenov, A; Rachinskii, D; Hegarty, S P; Huyet, G; Vladimirov, A G

    2014-01-01T23:59:59.000Z

    We study the effect of noise on the dynamics of passively mode-locked semiconductor lasers both experimentally and theoretically. A method combining analytical and numerical approaches for estimation of pulse timing jitter is proposed. We investigate how the presence of dynamical features such as wavelength bistability affects timing jitter.

  5. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    SciTech Connect (OSTI)

    Weiss, Shimon; Schlamp, Michael C; Alivisatos, A. Paul

    2014-02-11T23:59:59.000Z

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  6. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    SciTech Connect (OSTI)

    Weiss, Shimon; Schlam, Michael C; Alivisatos, A. Paul

    2014-03-25T23:59:59.000Z

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  7. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOE Patents [OSTI]

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2005-03-08T23:59:59.000Z

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  8. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOE Patents [OSTI]

    Weiss, Shimon (Pinole, CA); Schlamp, Michael C. (Plainsboro, NJ); Alivisatos, A. Paul (Oakland, CA)

    2011-09-27T23:59:59.000Z

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  9. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOE Patents [OSTI]

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2010-04-13T23:59:59.000Z

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  10. Coherent Control of Colloidal Semiconductor Nanocrystals R. Wilcken,

    E-Print Network [OSTI]

    Kassel, Universität

    Hannover e.V., Semiconductor and Photovoltaics-Group, Hollerithallee 8, D-30419 Hannover, Germany ABSTRACT on different quantum systems. In the pertubative regime, interferences of multiple excitation pathways enable variations in transition energies because of the NCs size distribution into account are required

  11. Linker-Induced Anomalous Emission of Organic-Molecule Conjugated Metal-Oxide Nanoparticles

    SciTech Connect (OSTI)

    Turkowski, Volodymyr; Babu, Suresh; Le, Duy; Kumar, Amit; Haldar, Manas K.; Wagh, Anil V.; Hu, Zhongjian; Karakoti, Ajay S.; Gesquiere, Andre J.; Law, Benedict; Mallik, Sanku; Rahman, Talat S.; Leuenberger, Michael N.; Seal, Sudipta

    2012-06-26T23:59:59.000Z

    Semiconductor nanoparticles conjugated with organic- and dye-molecules to yield high efficiency visible photoluminescence (PL) hold great potential for many future technological applications. We show that folic acid (FA)-conjugated to nanosize TiO2 and CeO2 particles demonstrates a dramatic increase of photoemission intensity at wavelengths between 500 and 700 nm when derivatized using aminopropyl trimethoxysilane (APTMS) as spacer-linker molecules between the metal oxide and FA. Using density-functional theory (DFT) and time-dependent DFT calculations we demonstrate that the strong increase of the PL can be explained by electronic transitions between the titania surface oxygen vacancy (OV) states and the low-energy excited states of the FA/APTMS molecule anchored onto the surface oxygen bridge sites in close proximity to the OVs. We suggest this scenario to be a universal feature for a wide class of metal oxide nanoparticles, including nanoceria, possessing a similar band gap (3 eV) and with a large surface-vacancy-related density of electronic states. We demonstrate that the molecule-nanoparticle linker can play a crucial role in tuning the electronic and optical properties of nanosystems by bringing optically active parts of the molecule and of the surface close to each other.

  12. The diameter of the world wide web

    E-Print Network [OSTI]

    Reka Albert; Hawoong Jeong; Albert-Laszlo Barabasi

    1999-09-10T23:59:59.000Z

    Despite its increasing role in communication, the world wide web remains the least controlled medium: any individual or institution can create websites with unrestricted number of documents and links. While great efforts are made to map and characterize the Internet's infrastructure, little is known about the topology of the web. Here we take a first step to fill this gap: we use local connectivity measurements to construct a topological model of the world wide web, allowing us to explore and characterize its large scale properties.

  13. Wide field imaging of distant clusters

    E-Print Network [OSTI]

    T. Treu

    2004-08-05T23:59:59.000Z

    Wide field imaging is key to understanding the build-up of distant clusters and their galaxy population. By focusing on the so far unexplored outskirts of clusters, where infalling galaxies first hit the cluster potential and the hot intracluster medium, we can help separate cosmological field galaxy evolution from that driven by environment. I present a selection of recent advancements in this area, with particular emphasis on Hubble Space Telescope wide field imaging, for its superior capability to deliver galaxy morphologies and precise shear maps of distant clusters.

  14. Medical Imaging with Semiconductor Detectors Dipartimento di Scienze e Tecnologie Avanzate, Universit del Piemonte Orientale and INFN,

    E-Print Network [OSTI]

    Ramello, Luciano

    . Angiographic and mammographic dual energy techniques will be discussed in some detail. 1. SEMICONDUCTOR

  15. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Patents [OSTI]

    Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

    2002-01-01T23:59:59.000Z

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in he probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  16. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Patents [OSTI]

    Weiss, Shimon (Pinole, CA); Bruchez, Jr., Marcel (Albany, CA); Alivisatos, Paul (Oakland, CA)

    2004-03-02T23:59:59.000Z

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  17. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Patents [OSTI]

    Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

    2012-10-16T23:59:59.000Z

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  18. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Patents [OSTI]

    Weiss, Shimon (Pinole, CA); Bruchez, Marcel (Newark, CA); Alivisatos, Paul (Oakland, CA)

    2011-12-06T23:59:59.000Z

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  19. Semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Patents [OSTI]

    Weiss, Shimon (Pinole, CA); Bruchez, Marcel (Newark, CA); Alivisatos, Paul (Oakland, CA)

    2011-12-20T23:59:59.000Z

    A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

  20. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOE Patents [OSTI]

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2005-08-09T23:59:59.000Z

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.