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Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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1

Organic-Inorganic Hetero Junction White Light Emitting Diode.  

E-Print Network (OSTI)

?? The purpose of this thesis work is to design and fabricates organic-inorganic hetero junction White Light Emitting Diode (WLED). In this WLED, inorganic material… (more)

Lubuna Beegum, Shafeek

2008-01-01T23:59:59.000Z

2

Fluorinated Phenoxy Boron Subphthalocyanines in Organic Light-Emitting Diodes  

Science Journals Connector (OSTI)

Fluorinated Phenoxy Boron Subphthalocyanines in Organic Light-Emitting Diodes ... All nuclear magnetic resonance (NMR) spectra were acquired on a Varian Mercury 400 MHz system in deuterated chloroform (CDCl3) purchased from Cambridge Isotope Laboratories which was used as received. ... Mass spectrometry was performed on a Waters GC time-of-flight mass spectrometer with an electron ionization probe and accurate mass determination. ...

Graham E. Morse; Michael G. Helander; Jozef F. Maka; Zheng-Hong Lu; Timothy P. Bender

2010-06-22T23:59:59.000Z

3

Optical Digital Audio Interconnect Based on Organic Light Emitting Diodes and Organic Photodiodes  

Science Journals Connector (OSTI)

An optical interconnect using solely organic optoelectronic components is presented. Careful optimization of the organic light emitting diodes and photodiodes allows us to successfully...

Valouch, Sebastian; Punke, Martin; Kettlitz, Siegfried W; Lemmer, Uli; Gerken, Martina

4

Spatial resolution and noise in organic light-emitting diode displays for medical imaging applications  

Science Journals Connector (OSTI)

We report on the resolution and noise characteristics of handheld and workstation organic light-emitting diode (OLED) displays in comparison with liquid crystal displays (LCDs). The...

Yamazaki, Asumi; Wu, Chih-Lei; Cheng, Wei-Chung; Badano, Aldo

2013-01-01T23:59:59.000Z

5

COLLOIDAL ELECTROLUMINESCENCE: NOVEL ROUTES TO CONTROLLED EMISSION OF ORGANIC LIGHT EMITTING DIODE DEVICES.  

E-Print Network (OSTI)

??In recent years the importance of the organic light emitting diode (OLED) has grown immensely, and the past two decades have seen ongoing and exhaustive… (more)

Huebner, Christopher

2009-01-01T23:59:59.000Z

6

Organic solid laser pumped by an organic light-emitting diode  

Science Journals Connector (OSTI)

We have proposed what we believe is a novel organic device pumped by an organic light-emitting diode to avoid a strong charge-induced absorption and nonradiative loss in an...

Wei, Bin; Kobayashi, Nyoriko; Ichikawa, Musubu; Koyama, Toshiki; Taniguchi, Y; Fukuda, T

2006-01-01T23:59:59.000Z

7

Red-emitting fluorescent Organic Light emitting Diodes with low sensitivity to self-quenching  

E-Print Network (OSTI)

Red-emitting fluorescent Organic Light emitting Diodes with low sensitivity to self-quenching S, France *E-mail : sebastien.forget@univ-paris13.fr Keywords: OLED, quenching, doping, red-emitting organic. We herein report on Organic Light-Emitting Diodes (OLEDs) based on a fluorescent amorphous red

Paris-Sud XI, Université de

8

White Organic Light-Emitting Diodes with fine chromaticity tuning via ultrathin layer position shifting  

E-Print Network (OSTI)

White Organic Light-Emitting Diodes with fine chromaticity tuning via ultrathin layer position : Non-doped white organic light-emitting diodes using an ultrathin yellow-emitting layer of rubrene (5 via a bright white (WOLED) with CIE coordinates (x= 0.33, y= 0.32), a ext of 1.9%, and a color

Paris-Sud XI, Université de

9

Asymptotic analysis of double-carrier, space-charge-limited transport in organic light-emitting diodes  

Science Journals Connector (OSTI)

...charge recombination occurs on a much longer time scale than diffusion and drift. asymptotic analysis|organic light-emitting diode|drift-diffusion equations| 1. Introduction Organic light-emitting diodes (OLEDs) are solid-state lighting...

2013-01-01T23:59:59.000Z

10

Storage of charge carriers on emitter molecules in organic light-emitting diodes  

E-Print Network (OSTI)

Organic light-emitting diodes (OLEDs) using the red phosphorescent emitter iridium(III)bis(2-methyldibenzo[f,h]quinoxaline) (acetylacetonate) [Ir(MDQ)[subscript 2](acac)] are studied by time-resolved electroluminescence ...

Reineke, Sebastian

11

Surface Plasmon Enhanced Phosphorescent Organic Light Emitting Diodes  

SciTech Connect

The objective of the proposed work was to develop the fundamental understanding and practical techniques for enhancement of Phosphorescent Organic Light Emitting Diodes (PhOLEDs) performance by utilizing radiative decay control technology. Briefly, the main technical goal is the acceleration of radiative recombination rate in organometallic triplet emitters by using the interaction with surface plasmon resonances in noble metal nanostructures. Increased photonic output will enable one to eliminate constraints imposed on PhOLED efficiency by triplet-triplet annihilation, triplet-polaron annihilation, and saturation of chromophores with long radiative decay times. Surface plasmon enhanced (SPE) PhOLEDs will operate more efficiently at high injection current densities and will be less prone to degradation mechanisms. Additionally, introduction of metal nanostructures into PhOLEDs may improve their performance due to the improvement of the charge transport through organic layers via multiple possible mechanisms ('electrical bridging' effects, doping-like phenomena, etc.). SPE PhOLED technology is particularly beneficial for solution-fabricated electrophosphorescent devices. Small transition moment of triplet emitters allows achieving a significant enhancement of the emission rate while keeping undesirable quenching processes introduced by the metal nanostructures at a reasonably low level. Plasmonic structures can be introduced easily into solution-fabricated PhOLEDs by blending and spin coating techniques and can be used for enhancement of performance in existing device architectures. This constitutes a significant benefit for a large scale fabrication of PhOLEDs, e.g. by roll-to-roll fabrication techniques. Besides multieexciton annihilation, the power efficacy of PhOLEDs is often limited by high operational bias voltages required for overcoming built-in potential barriers to injection and transport of electrical charges through a device. This problem is especially pronounced in solution processed OLEDs lacking the accuracy and precision of fabrication found in their small molecule counterparts. From this point of view, it seems beneficial to develop materials allowing reduction of the operation bias voltage via improvement of the charge injection. The materials sought have to be compatible with solution-based fabrication process and allow easy incorporation of metal nanostructures.

Guillermo Bazan; Alexander Mikhailovsky

2008-08-01T23:59:59.000Z

12

Organic Light Emitting Diodes: materials, device structures and light extraction  

Science Journals Connector (OSTI)

Organic Light Emitting Devices (OLEDs) are presented with particular emphasis on materials, device structures and strategies to improve light extraction. For the fabrication of efficient OLEDs, two types of electroluminescent materials are used (small molecules and polymers) with efficiencies and lifetimes which are now acceptable for small size or low content information displays. Two main approaches are described to enhance external efficiency, one is based on direct modification of the species emission and the other on modification of emitted guided modes propagation within the device. The features of the different approaches are evidenced through examples of devices reported in the literature.

B. Geffroy; L. Rocha

2009-01-01T23:59:59.000Z

13

Blue fluorescent organic light emitting diodes with multilayered graphene anode  

SciTech Connect

As an innovative anode for organic light emitting devices (OLEDs), we have investigated graphene films. Graphene has importance due to its huge potential in flexible OLED applications. In this work, graphene films have been catalytically grown and transferred to the glass substrate for OLED fabrications. We have successfully fabricated 2 mm × 2 mm device area blue fluorescent OLEDs with graphene anodes which showed 2.1% of external quantum efficiency at 1000 cd/m{sup 2}. This is the highest value reported among fluorescent OLEDs using graphene anodes. Oxygen plasma treatment on graphene has been found to improve hole injections in low voltage regime, which has been interpreted as oxygen plasma induced work function modification. However, plasma treatment also increases the sheet resistance of graphene, limiting the maximum luminance. In summary, our works demonstrate the practical possibility of graphene as an anode material for OLEDs and suggest a processing route which can be applied to various graphene related devices.

Hwang, Joohyun [OLED Lighting Research Team, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700 (Korea, Republic of)] [OLED Lighting Research Team, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700 (Korea, Republic of); Choi, Hong Kyw [Graphene Electronics Creative Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700 (Korea, Republic of)] [Graphene Electronics Creative Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700 (Korea, Republic of); Moon, Jaehyun; Shin, Jin-Wook; Joo, Chul Woong; Han, Jun-Han; Cho, Doo-Hee; Huh, Jin Woo [OLED Lighting Research Team, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700 (Korea, Republic of)] [OLED Lighting Research Team, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700 (Korea, Republic of); Choi, Sung-Yool [Graphene Electronics Creative Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700 (Korea, Republic of)] [Graphene Electronics Creative Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700 (Korea, Republic of); Lee, Jeong-Ik, E-mail: jiklee@etri.re.kr [OLED Lighting Research Team, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700 (Korea, Republic of)] [OLED Lighting Research Team, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700 (Korea, Republic of); Chu, Hye Yong [OLED Lighting Research Team, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700 (Korea, Republic of)] [OLED Lighting Research Team, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700 (Korea, Republic of)

2012-10-15T23:59:59.000Z

14

P-66: Personal Communication System Hand-set with Organic Light Emitting Diode Display  

E-Print Network (OSTI)

Light Emitting Diodes (OLED) display panel. As a result, OLEDs technology was applied to a display for a

Seungeun Lee; Wonseok Oh; Sungchul Lee; Jongchan Choi

15

Vanadium pentoxide modified polycrystalline silicon anode for active-matrix organic light-emitting diodes  

E-Print Network (OSTI)

Vanadium pentoxide modified polycrystalline silicon anode for active-matrix organic light to be an efficient anode for organic light-emitting diode OLED X. L. Zhu, J. X. Sun, H. J. Peng, Z. G. Meng, M. Wong an ultrathin vanadium pentoxide V2O5 layer on the p-Si anode, the performance of the OLED can be greatly

16

Photonic crystal light emitting diode.  

E-Print Network (OSTI)

?? This master's thesis describe electromagnetic simulations of a gallium antimonide (GaSb) light emitting diode, LED. A problem for such devices is that most of… (more)

Leirset, Erlend

2010-01-01T23:59:59.000Z

17

High-Efficiency and Stable White Organic Light-Emitting Diode Using a Single Emitter  

Energy.gov (U.S. Department of Energy (DOE))

This project is demonstrating an efficient and stable white organic light-emitting diode (WOLED) using a single emitter on a planar glass substrate. Current WOLED technology requires the use of multiple emissive materials, which are expensive to manufacture and also generate color instability and color aging issues, affecting WOLED performance and operational lifetime.

18

The effect of anisotropy on light extraction of organic light-emitting diodes with photonic crystal structure  

Science Journals Connector (OSTI)

The light extraction efficiency of organic light-emitting diodes (OLED) is greatly limited due to the difference in refractive indexes betweenmaterials ofOLED.We fabricatedOLED with photonic crystal microstructures in the interface between the glass ...

Wei Xu; Yang Li

2013-01-01T23:59:59.000Z

19

Highly Efficient Silicon Light Emitting Diode  

E-Print Network (OSTI)

silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap

Leminh Holleman Wallinga; P. Leminh; J. Holleman; H. Wallinga

2000-01-01T23:59:59.000Z

20

All-small-molecule efficient white organic light-emitting diodes by multi-layer blade coating  

E-Print Network (OSTI)

Letter All-small-molecule efficient white organic light-emitting diodes by multi-layer blade-molecule organic light-emitting diodes are fabricated by multi-layer blade coating on hot plate at 80 °C with hot.3 lm/W). Orange emitter iridium(III)bis (4-(4-t-butylphenyl) thie- no[3,2-c]pyridinato-N,C20

Meng, Hsin-Fei

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Two examples of organic opto-electronic devices: Light emitting diodes and solar cells  

Science Journals Connector (OSTI)

Organic and polymeric (plastic) opto-electronic devices have been developed over the past decade and some of them have made the leap from the research laboratory to commercial use. We present a simple and inexpensive method of fabricating organic light emitting diodes and organic photovoltaic cells. The devices are fabricated by the deposition of solid films based on the fluorescent polymer MEH:PPV using the spin-coating technique. The films were sandwiched between electrodes one of which was made of Bi-Pb-Cd-Sn alloy. An overview of these two devices is also provided.

J. L. Maldonado; G. Ramos-Ortíz; M. L. Miranda; S. Vázquez-Córdova; M. A. Meneses-Nava; O. Barbosa-García; M. Ortíz-Gutiérrez

2008-01-01T23:59:59.000Z

22

Dry formation of polymer hole injection layer for top emitting organic light emitting diodes  

Science Journals Connector (OSTI)

Dry formation of polymer hole injection layer is introduced as an effective method for improving the performance of top emitting organic light emitting diodes (TOLEDs). This method involves transferring a metal/polymer bilayer to the surface of organic layers of the device by pressing. An added advantage of this method is the ability to pattern the anode in the transfer process. Fabrication of the inverted TOLED by this method results in a drastic reduction of the turn-on voltage from 14.5 to 6.5 V when compared with a reference.

Soon-min Seo; Jong H. Kim; Hong H. Lee

2006-01-01T23:59:59.000Z

23

Enhancing the emission directionality of organic light-emitting diodes by using photonic microstructures  

SciTech Connect

We report microstructured organic light-emitting diodes (OLEDs) with directional emission based on efficient solution-processable europium-OLEDs patterned by solvent assisted microcontact molding. The angle dependence of the light emission is characterized for OLEDs with square-array photonic crystals with periods between 275?nm and 335?nm. The microstructured devices have emission patterns strongly modified from the Lambertian emission of planar OLEDs and can approximately double the emitted power in a desired angle range in both s- and p-polarizations. The modified emission is attributed to light diffracted out of the waveguide modes of the OLEDs.

Zhang, Shuyu; Turnbull, Graham A., E-mail: gat@st-andrews.ac.uk, E-mail: idws@st-andrews.ac.uk; Samuel, Ifor D. W., E-mail: gat@st-andrews.ac.uk, E-mail: idws@st-andrews.ac.uk [Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, Fife KY16 9SS (United Kingdom)] [Organic Semiconductor Centre, SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, Fife KY16 9SS (United Kingdom)

2013-11-18T23:59:59.000Z

24

Room-temperature spin-polarized organic light-emitting diodes with a single ferromagnetic electrode  

SciTech Connect

In this paper, we demonstrate the concept of a room-temperature spin-polarized organic light-emitting diode (Spin-OLED) structure based on (i) the deposition of an ultra-thin p-type organic buffer layer on the surface of the ferromagnetic electrode of the Spin-OLED and (ii) the use of oxygen plasma treatment to modify the surface of that electrode. Experimental results demonstrate that the brightness of the developed Spin-OLED can be increased by 110% and that a magneto-electroluminescence of 12% can be attained for a 150?mT in-plane magnetic field, at room temperature. This is attributed to enhanced hole and room-temperature spin-polarized injection from the ferromagnetic electrode, respectively.

Ding, Baofu, E-mail: b.ding@ecu.edu.au; Alameh, Kamal, E-mail: k.alameh@ecu.edu.au [Electron Science Research Institute, Edith Cowan University, 270 Joondalup Drive, Joondalup WA 6027 Australia (Australia); Song, Qunliang [Institute for Clean Energy and Advanced Materials, Southwest University, Chongqing 400715 (China)

2014-05-19T23:59:59.000Z

25

Highly efficient greenish-blue platinum-based phosphorescent organic light-emitting diodes on a high triplet energy platform  

SciTech Connect

We have demonstrated high-efficiency greenish-blue phosphorescent organic light-emitting diodes (PHOLEDs) based on a dimesitylboryl-functionalized C^N chelate Pt(II) phosphor, Pt(m-Bptrz)(t-Bu-pytrz-Me). Using a high triplet energy platform and optimized double emissive zone device architecture results in greenish-blue PHOLEDs that exhibit an external quantum efficiency of 24.0% and a power efficiency of 55.8?lm/W. This record high performance is comparable with that of the state-of-the-art Ir-based sky-blue organic light-emitting diodes.

Chang, Y. L., E-mail: yilu.chang@mail.utoronto.ca; Gong, S., E-mail: sgong@chem.utoronto.ca; White, R.; Lu, Z. H., E-mail: zhenghong.lu@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario M5S 3E4 (Canada); Wang, X.; Wang, S., E-mail: wangs@chem.queensu.ca [Department of Chemistry, Queen's University, 90 Bader Lane, Kingston, Ontario K7L 3N6 (Canada); Yang, C. [Department of Chemistry, Wuhan University, Wuhan 430072 (China)

2014-04-28T23:59:59.000Z

26

Efficient Charge Balance in Blue Phosphorescent Organic Light Emitting Diodes by Two Types of Mixed Layer  

Science Journals Connector (OSTI)

Abstract The authors have demonstrated a highly efficient and long-lifetime blue phosphorescent organic light emitting diode (PHOLED) that uses two types of mixed layers. The mixed layers play the role of carrier injection control and exciton generation zone extension. One of the layers is applied for mixing the hole transport layer (HTL) and host material at the HTL side for carrier injection control. The other works as a mixed electron transporting layer (ETL) and host material at the ETL side. The optimized blue PHOLED has been shown to achieve high performance owing to the mixed layer effects. It gave a maximum luminous efficiency of 25.55 cd/A, maximum external quantum efficiency of 13.05%, and lifetime of 7.24 h under 500 cd/m2. These results indicate that applying mixed layers is a simple and efficient method that does not require significant structural change.

Hyung Jin Yang; Ho Won Lee; Song Eun Lee; Yong Sun; Kyo Min Hwang; Han Kyu Yoo; Sung Kyu Lee; Woo Young Kim; Young Kwan Kim

2014-01-01T23:59:59.000Z

27

Ultrastrong light-matter coupling in electrically doped microcavity organic light emitting diodes  

SciTech Connect

The coupling of the electromagnetic field with an electronic transition gives rise, for strong enough light-matter interactions, to hybrid states called exciton-polaritons. When the energy exchanged between light and matter becomes a significant fraction of the material transition energy an extreme optical regime called ultrastrong coupling (USC) is achieved. We report a microcavity embedded p-i-n monolithic organic light emitting diode working in USC, employing a thin film of squaraine dye as active layer. A normalized coupling ratio of 30% has been achieved at room temperature. These USC devices exhibit a dispersion-less angle-resolved electroluminescence that can be exploited for the realization of innovative optoelectronic devices. Our results may open the way towards electrically pumped polariton lasers.

Mazzeo, M., E-mail: marco.mazzeo@unisalento.it [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Genco, A. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); Gambino, S. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy); Ballarini, D.; Mangione, F.; Sanvitto, D. [NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); Di Stefano, O.; Patanè, S.; Savasta, S. [Dipartimento di Fisica e Scienze della Terra, Università di Messina, Viale F. Stagno d'Alcontres 31, 98166 Messina (Italy); Gigli, G. [Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via Monteroni, 73100 Lecce (Italy); NNL, Istituto Nanoscienze - CNR, Via Arnesano, 73100 Lecce (Italy); CBN, Istituto Italiano Tecnologia, Via Barsanti 1, 73010 Lecce (Italy)

2014-06-09T23:59:59.000Z

28

Electroluminescence from colloidal semiconductor CdSe nanoplatelets in hybrid organic–inorganic light emitting diode  

Science Journals Connector (OSTI)

Abstract We report on the fabrication of a hybrid light-emitting-diode based on colloidal semiconductor CdSe nanoplatelets as emitters and organic TAZ [3-(Biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole] and TPD [N, N?-bis (3-methylphenyl)-N, N?-bis (phenyl)-benzidine] materials as the electron and hole transporting layers. Electroluminescent and current–voltage characteristics of the developed hybrid device with the turn-on voltage of 5.5 V and the radiation wavelength of 515 nm have been obtained. Semiconductor nanoplatelets like CdSe are attractive for the fabrication of hybrid \\{LEDs\\} with low operating voltages, spectrally pure color and short-wavelength electroluminescence, which is required for RGB devices.

A.G. Vitukhnovsky; V.S. Lebedev; A.S. Selyukov; A.A. Vashchenko; R.B. Vasiliev; M.S. Sokolikova

2015-01-01T23:59:59.000Z

29

WHITE ORGANIC LIGHT-EMITTING DIODES USING 1,1,2,3,4,5-HEXAPHENYLSILOLE (HPS) AS GREENISH-BLUE EMITTER  

E-Print Network (OSTI)

WHITE ORGANIC LIGHT-EMITTING DIODES USING 1,1,2,3,4,5- HEXAPHENYLSILOLE (HPS) AS GREENISH, Hong Kong, P. R. China Abstract White organic light-emitting diodes (WOLEDs) with the structure of ITO emitter and the 1,1,2,3,4,5- hexaphenylsilole (HPS) layer was used as the greenish- blue emitter. White

30

Sandia National Laboratories: light-emitting diode  

NLE Websites -- All DOE Office Websites (Extended Search)

light-emitting diode Sandian Receives the Illuminating Engineering Society of North America, South Region Technical Award On December 12, 2014, in Capabilities, Energy, Energy...

31

Carbazole modified terphenyl based high triplet energy host materials for blue phosphorescent organic light-emitting diodes  

Science Journals Connector (OSTI)

Abstract Carbazole modified terphenyl based high triplet energy host materials were developed for application as host materials for blue phosphorescent organic light-emitting diodes. Two terphenyl based materials, 9-(5?-phenyl-[1,1?:2?,1?:3?,1???-quaterphenyl]-3-yl)-9H-carbazole (CzTPPh) and 9-(3?,5?-di(pyridin-3-yl)-[1,1:2?,1?-terphenyl]-3-yl)-9H-carbazole (CzTPPy), were synthesized as the host materials with high triplet energies of 2.75 eV and 2.73 eV, respectively. The two host materials were evaluated as the host materials for blue phosphorescent organic light-emitting diodes and high quantum efficiencies of 20.2% and 15.7% were obtained in the CzTPPh and CzTPPy devices, respectively.

Chil Won Lee; Jun Yeob Lee

2014-01-01T23:59:59.000Z

32

Efficient organic light-emitting diode using semitransparent silver as anode Huajun Peng, Xiuling Zhu, Jiaxin Sun, Zhiliang Xie, Shuang Xie,  

E-Print Network (OSTI)

Efficient organic light-emitting diode using semitransparent silver as anode Huajun Peng, Xiuling A semitransparent silver layer is investigated as the anode for organic light-emitting devices OLEDs. A bottom-emitting OLED using the modified, semitransparent silver anode, demonstrates improved current

33

Improved property in organic light-emitting diode utilizing two Al/Alq3 layers  

Science Journals Connector (OSTI)

We reported on the fabrication of organic light-emitting devices (OLEDs) utilizing the two Al/Alq"3 layers and two electrodes. This novel green device with structure of Al(110nm)/tris(8-hydroxyquinoline) aluminum (Alq"3)(65nm)/Al(110nm)/Alq"3(50nm)/N,N'-dipheny1-N, ... Keywords: Emitting layer, OLEDS, Transporting layer

Chunlin Zhang; Su Liu; Fangcong Wang; Yong Zhang

2008-12-01T23:59:59.000Z

34

Development and Utilization of Host Materials for White Phosphorescent Organic Light-Emitting Diodes  

SciTech Connect

Our project was primarily focused on the MYPP 2015 goal for white phosphorescent organic devices (PhOLEDs or phosphorescent organic light-emitting diodes) for solid-state lighting with long lifetimes and high efficiencies. Our central activity was to synthesize and evaluate a new class of host materials for blue phosphors in the PhOLEDs, known to be a weak link in the device operating lifetime. The work was a collaborative effort between three groups, one primarily responsible for chemical design and characterization (Chen), one primarily responsible for device development (Tang) and one primarily responsible for mechanistic studies and degradation analysis (Rothberg). The host materials were designed with a novel architecture that chemically links groups with good ability to move electrons with those having good ability to move “holes” (positive charges), the main premise being that we could suppress the instability associated with physical separation and crystallization of the electron conducting and hole conducting materials that might cause the devices to fail. We found that these materials do prevent crystallization and that this will increase device lifetimes but that efficiencies were reduced substantially due to interactions between the materials creating new low energy “charge transfer” states that are non-luminescent. Therefore, while our proposed strategy could in principle improve device lifetimes, we were unable to find a materials combination where the efficiency was not substantially compromised. In the course of our project, we made several important contributions that are peripherally related to the main project goal. First, we were able to prepare the proposed new family of materials and develop synthetic routes to make them efficiently. These types of materials that can transport both electrons and holes may yet have important roles to play in organic device technology. Second we developed an important new method for controlling the deposition profile of material so that arbitrary concentration gradients can be implemented in layers with mixed composition. These concentration profiles are known to increase device efficiency and longevity and we confirmed that experimentally. Third, we investigated a new method for analyzing degradation in devices using mass spectrometry to look for degradation products. We showed that these methods are not simple to interpret unambiguously and need to be used with caution.

Tang, Ching; Chen, Shaw

2013-05-31T23:59:59.000Z

35

Surface Plasmon Coupled Light-emitting Diode  

Science Journals Connector (OSTI)

The fundamental phenomena, basic principles, and device fabrication and characterization of surface plasmon coupled InGaN/GaN quantum-well light-emitting diode are reviewed, including...

Chen, Horng-Shyang; Kuo, Yang; Lin, Chun-Han; Chen, Chia-Feng; Chou, Wang-Hsien; Chiu, Min-Hsuan; Shih, Pei-Ying; Su, Chia-Ying; Liao, Che-Hao; Hsieh, Chieh; Chen, Chih-Yen; Kiang, Yean-Woei; Yang, Chih-Chung

36

Thermal pumping of light-emitting diodes  

E-Print Network (OSTI)

The work presented here is a study of thermally enhanced injection in light-emitting diodes (LEDs). This effect, which we refer to as "thermal pumping", results from Peltier energy exchange from the lattice to charge ...

Gray, Dodd (Dodd J.)

2011-01-01T23:59:59.000Z

37

An indole derivative as a high triplet energy hole transport material for blue phosphorescent organic light-emitting diodes  

Science Journals Connector (OSTI)

Abstract A thermally stable high triplet energy material derived from an indoloacridine core and indole hole transport units, 8,8-bis(4-(1H-indol-1-yl)phenyl)-8H-indolo[3,2,1-de]acridine (BIPIA), was synthesized as the hole transport material for deep blue phosphorescent organic light-emitting diodes. The BIPIA hole transport material showed a high triplet energy of 2.95 eV and high glass transition temperature of 142 °C. A high quantum efficiency of 19.3% was obtained in the deep blue device using BIPIA as the high triplet energy hole transport material.

Min Su Park; Jun Yeob Lee

2013-01-01T23:59:59.000Z

38

Light extraction analysis and enhancement in a quantum dot light emitting diode  

E-Print Network (OSTI)

Light extraction analysis and enhancement in a quantum dot light emitting diode Ruidong Zhu outcoupling and angular performance of quantum dot light emitting diode (QLED). To illustrate the design principles, we use a red QLED as an example and compare its performance with an organic light emitting diode

Wu, Shin-Tson

39

Light Emitting Diodes (LEDs) for General Illumiation  

NLE Websites -- All DOE Office Websites (Extended Search)

LIGHT LIGHT EMITTING DIODES (LEDS) FOR GENERAL ILLUMINATION AN OIDA TECHNOLOGY ROADMAP An OIDA Report March 2001 Co-Sponsored by DOE/BTS and OIDA Compiled by Eric D. Jones Sandia National Laboratories OIDA Member Use Only OIDA OPTOELECTRONICS INDUSTRY DEVELOPMENT ASSOCIATION 1133 Connecticut Avenue, NW Suite 600 Washington, DC 20036 Ph: (202) 785-4426 Fax: (202) 785-4428 Web: http://www.OIDA.org © 2001 OIDA Optoelectronics Industry Development Association All data contained in this report is proprietary to OIDA and may not be distributed in either original or reproduced form to anyone outside the client's internal organization within five years of the report date without prior written permission of the Optoelectronics Industry Development Association. Published by: Optoelectronics Industry Development Association

40

Highly enhanced light extraction from organic light emitting diodes with little image blurring and good color stability  

Science Journals Connector (OSTI)

Abstract We report a highly enhanced light extraction from a top emission organic light emitting diode with little image blurring and color variation with viewing angle. Direct integration of a high refractive index micro lens array on the top of the transparent indium zinc oxide top electrode of a green phosphorescent OLED showed a significant enhancement of light extraction to get EQE of 44.7% from 27.6%, the power efficiency of 134.7 lm/w from 85.9 lm/W and the current efficiency of 217.2 cd/A from 120.7 cd/A without image blurring. In addition, the device showed excellent color stability on viewing angle with Commission Internationale de l’Eclairage (CIE) coordinate of ?x = 0.01, ?y = 0.01 as the viewing angle varied from 0° to 60°.

Jung-Bum Kim; Jeong-Hwan Lee; Chang-Ki Moon; Kwon-Hyeon Kim; Jang-Joo Kim

2015-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Low-cost electrochemical treatment of indium tin oxide anodes for high-efficiency organic light-emitting diodes  

SciTech Connect

We demonstrate a simple low-cost approach as an alternative to conventional O{sub 2} plasma treatment to modify the surface of indium tin oxide (ITO) anodes for use in organic light-emitting diodes. ITO is functionalized with F{sup ?} ions by electrochemical treatment in dilute hydrofluoric acid. An electrode with a work function of 5.2?eV is achieved following fluorination. Using this electrode, a maximum external quantum efficiency of 26.0% (91?cd/A, 102?lm/W) is obtained, which is 12% higher than that of a device using the O{sub 2} plasma-treated ITO. Fluorination also increases the transparency in the near-infrared region.

Hui Cheng, Chuan, E-mail: chengchuanhui@dlut.edu.cn; Shan Liang, Ze; Gang Wang, Li; Dong Gao, Guo; Zhou, Ting; Ming Bian, Ji; Min Luo, Ying [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Tong Du, Guo, E-mail: dugt@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

2014-01-27T23:59:59.000Z

42

Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations  

SciTech Connect

The importance of O{sub 3} pulse duration for encapsulation of organic light emitting diodes (OLEDs) with ultra thin inorganic atomic layer deposited Al{sub 2}O{sub 3} layers is demonstrated for deposition temperatures of 50 °C. X-ray reflectivity (XRR) measurements show that O{sub 3} pulse durations longer than 15?s produce dense and thin Al{sub 2}O{sub 3} layers. Correspondingly, black spot growth is not observed in OLEDs encapsulated with such layers during 91 days of aging under ambient conditions. This implies that XRR can be used as a tool for process optimization of OLED encapsulation layers leading to devices with long lifetimes.

Singh, Aarti, E-mail: aarti.singh@namlab.com; Schröder, Uwe [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany)] [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany); Klumbies, Hannes; Müller-Meskamp, Lars; Leo, Karl [Dresden Innovation Center Energy Efficiency, Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany)] [Dresden Innovation Center Energy Efficiency, Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany); Geidel, Marion; Knaut, Martin; Hoßbach, Christoph; Albert, Matthias [Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany)] [Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany); Mikolajick, Thomas [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany) [Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany); Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany)

2013-12-02T23:59:59.000Z

43

Highly efficient inverted top emitting organic light emitting diodes using a transparent top electrode with color stability on viewing angle  

SciTech Connect

We report a highly efficient phosphorescent green inverted top emitting organic light emitting diode with excellent color stability by using the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile/indium zinc oxide top electrode and bis(2-phenylpyridine)iridium(III) acetylacetonate as the emitter in an exciplex forming co-host system. The device shows a high external quantum efficiency of 23.4% at 1000?cd/m{sup 2} corresponding to a current efficiency of 110?cd/A, low efficiency roll-off with 21% at 10?000?cd/m{sup 2} and low turn on voltage of 2.4?V. Especially, the device showed very small color change with the variation of ?x?=?0.02, ?y?=?0.02 in the CIE 1931 coordinates as the viewing angle changes from 0° to 60°. The performance of the device is superior to that of the metal/metal cavity structured device.

Kim, Jung-Bum; Lee, Jeong-Hwan; Moon, Chang-Ki; Kim, Jang-Joo, E-mail: jjkim@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)

2014-02-17T23:59:59.000Z

44

Carbazolyldibenzofuran-type high-triplet-energy bipolar host material for blue phosphorescent organic light-emitting diodes  

Science Journals Connector (OSTI)

Abstract A high-triplet-energy material, 9?-(4,4?-(phenylphosphoryl)bis(dibenzo[b,d]furan-6,2-diyl))bis(9H-carbazole) (44DFCzPO), was synthesized as a bipolar host material for blue phosphorescent organic light-emitting diodes (PHOLEDs). 44DFCzPO was synthesized by the selective lithiation of the 4-position of a carbazole-modified dibenzofuran, followed by phosphorylation. 44DFCzPO showed a high triplet energy of 2.91 eV for energy transfer to a blue phosphorescent dopant, and bipolar charge transport properties for balanced hole and electron density in the emitting layer. A high quantum efficiency of 16.7% at a low doping concentration of 3% was obtained using 44DFCzPO as the host in blue PHOLEDs.

Sook Hee Jeong; Jun Yeob Lee

2014-01-01T23:59:59.000Z

45

High triplet energy Al complex as a host material for blue phosphorescent organic light-emitting diodes  

Science Journals Connector (OSTI)

Abstract An Al complex, tris((2-(pyrazol-1-yl)pyridin-3-yl)oxy)aluminum (Al(pypy)3), was synthesized as a high triplet energy host material for blue phosphorescent organic light-emitting diodes. A high triplet energy ligand, 2-(1H-pyrazol-1-yl)pyridin-3-ol, was coordinated to the Al to develop the high triplet energy host material derived from Al. The Al(pypy)3 host showed a high triplet energy of 2.86 eV for efficient energy transfer to blue triplet emitter. A maximum quantum efficiency of 20.5% was achieved in blue device using the Al(pypy)3 host material.

Chan Seok Oh; Jun Yeob Lee

2014-01-01T23:59:59.000Z

46

Semitransparent metal or distributed Bragg reflector for wide-viewing-angle organic light-emitting-diode microcavities  

Science Journals Connector (OSTI)

Microcavities for organic light-emitting devices (OLED’s) with a metal mirror on one side and a distributed Bragg reflector (DBR) on the other side have been extensively studied in...

Neyts, Kristiaan; De Visschere, Patrick; Fork, David K; Anderson, Greg B

2000-01-01T23:59:59.000Z

47

A highly color-stability white organic light-emitting diode by color conversion within hole injection layer  

Science Journals Connector (OSTI)

We demonstrated a novel-structure white organic light-emitting devices (WOLEDs) composed of a greenish blue fluorescent emitting layer and a red fluorescent dye-doped hole injection...

Li, C; Ichikawa, M; Wei, B; Taniguchi, Y; Kimura, H; Kawaguchi, K; Sakurai, K

2007-01-01T23:59:59.000Z

48

Enhancing the performance of organic-inorganic hybrid light-emitting diodes by inserting a conjugated polyelectrolyte interlayer  

Science Journals Connector (OSTI)

Hybrid light-emitting diodes (HyLEDs) incorporating the advantages of organic and inorganic semiconductors, were promising to realise efficient electroluminescence with air-stable charge-injection interfaces. However, HyLEDs with only inorganic semiconductor such as zinc oxide (ZnO) as electron-injection layer suffered from low devices efficiencies due to large electron injection barrier. To improve the electron injection, conjugated polyelectrolyte poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) was used together with ZnO as electron-injection layer by fabricating it on top of ZnO. Experimental data showed that the light efficiencies of HyLEDs were almost doubled after the insertion of PFN. The performances enhancement was attributed to the reduced energy barrier for electron injection from ZnO. The electron current increased. And therefore, the balance of electron and hole currents was improved.

Yongli Wang; Qiaoli Niu; Donghuan Qin; Hongmei Liu; Yong Zhang

2014-01-01T23:59:59.000Z

49

A study on full color organic light emitting diodes with blue common layer under the patterned emission layer  

Science Journals Connector (OSTI)

Abstract Color patterning steps for red, green, and blue emission layers (EMLs) are crucial for the production of full color organic light-emitting diodes (OLEDs). The most common method to form individually patterned \\{EMLs\\} is to use a shadow mask as the key component for patterning. However, most pixel defects are caused by such kinds of patterning steps. Therefore, skipping certain color patterning steps could significantly improve the production yield during the fine metal masking process in the OLED fabrication. A representative example of such approach is the top blue common layer (TBCL) structure with a non-patterned BCL on top of both green and red EMLs. However, this structure could cause blue color mixing in green or red devices. To prevent this effect, we propose a newly devised bottom BCL (BBCL) structure with the BCL that is totally separated from both green and red EMLs. In particular, we utilized 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile interlayer (7 nm) between the underlying BCL and the hole injection layer to completely extinguish blue emission. As a result, both green and red devices with the BBCL structure showed relatively better efficiencies compared to those with the TBCL structure without any color mixing.

Hee Young Shin; Min Chul Suh

2014-01-01T23:59:59.000Z

50

Indium-tin-oxide-free tris(8-hydroxyquinoline) Al organic light-emitting diodes with 80% enhanced power efficiency  

SciTech Connect

Efficient indium tin oxide (ITO)-free small molecule organic light-emitting diodes (SMOLEDs) with multilayered highly conductive poly(3,4-ethylenedioxy thiophene):poly(styrenesulfonate) (PEDOT:PSS) as the anode are demonstrated. PEDOT:PSS/MoO{sub 3}/N,N'-diphenyl- N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPD)/tris(8-hydroxyquinoline) Al (Alq{sub 3})/4,7-diphenyl-1,10-phenanthroline (BPhen)/LiF/Al SMOLEDs exhibited a peak power efficiency of 3.82 lm/W, 81% higher than that of similar ITO-based SMOLEDs (2.11 lm/W). The improved performance is believed to be due to the higher work function, lower refractive index, and decreased surface roughness of PEDOT:PSS vs ITO, and to Ohmic hole injection from PEDOT:PSS to the NPD layer via the MoO{sub 3} interlayer. The results demonstrate that PEDOT:PSS can substitute ITO in SMOLEDs with strongly improved device performance.

Cai, Min; Xiao, Teng; Liu, Rui; Chen, Ying; Shinar, Ruth; Shinar, Joseph

2011-10-11T23:59:59.000Z

51

Modification of polycrystalline silicon as efficient anode for active-matrix organic light-emitting diodes  

E-Print Network (OSTI)

Modification of polycrystalline silicon as efficient anode for active- matrix organic light silicon (p-Si) on the performance of p-Si anode OLEDs have been studied. UV-ozone treatment of p. By depositing ultra-thin high work function metal oxides, such as V2O5 and MoO3, on p-Si anode, the performance

52

Surface-Roughened Light-Emitting Diodes: An Accurate Model  

Science Journals Connector (OSTI)

Surface roughening is frequently employed to increase light extraction from light-emitting diodes (LEDs), especially in the important case of III-Nitride LEDs. We ...

David, Aurelien

2013-01-01T23:59:59.000Z

53

Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate  

Energy.gov (U.S. Department of Energy (DOE))

This project is producing high-efficiency semipolar light-emitting diodes (LEDs) on low-defect bulk gallium nitride (GaN) substrates.

54

Optimization of freeform lightpipes for light-emitting-diode projectors  

Science Journals Connector (OSTI)

Standard nonimaging components used to collect and integrate light in light-emitting-diode-based projector light engines such as tapered rods and compound parabolic concentrators are...

Fournier, Florian; Rolland, Jannick

2008-01-01T23:59:59.000Z

55

White light emitting diode as liquid crystal display backlight ; High brightness light emitting diode as liquid crystal display backlight .  

E-Print Network (OSTI)

??The discovery of high brightness (white) light emitting diode (LED) is considered as a real threat to the current lighting industry in various applications. One… (more)

Soon, Chian Myau

2007-01-01T23:59:59.000Z

56

Development of ZnO Based Light Emitting Diodes and Laser Diodes.  

E-Print Network (OSTI)

??ZnO based homojunction light emitting diode, double heterojunction light emitting diode, embedded heterojunction random laser diode and Fabry-Perot nanowire laser devices were fabricated and characterized.… (more)

Kong, Jieying

2012-01-01T23:59:59.000Z

57

Improved power efficiency in blue phosphorescent organic light-emitting diodes using diphenylmethyl linkage based high triplet energy hole transport materials  

Science Journals Connector (OSTI)

Improved power efficiency in blue phosphorescent organic light-emitting diodes (PHOLEDs) was demonstrated by using new high triplet energy hole-transport materials based on the diphenylmethyl linkage. Two high triplet energy hole-transport materials with diphenylamine or ditolyamine moieties linked through a diphenylmethyl linkage, 4,4?-(diphenylmethylene)bis(N,N-diphenylaniline) (TCBPA) and 4,4?-(diphenylmethylene)bis(N,N-di-p-tolylaniline), were synthesized and evaluated as hole-transport materials for blue PHOLEDs. The power efficiency of TCBPA was superior to that of standard 1,1-bis[4-[N,N?-di(p-tolyl)amino]phenyl]cyclohexane.

Chil Won Lee; Jun Yeob Lee

2013-01-01T23:59:59.000Z

58

Stable blue phosphorescent organic light emitting devices  

DOE Patents (OSTI)

Novel combination of materials and device architectures for organic light emitting devices is provided. An organic light emitting device, is provided, having an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer includes a host and a phosphorescent emissive dopant having a peak emissive wavelength less than 500 nm, and a radiative phosphorescent lifetime less than 1 microsecond. Preferably, the phosphorescent emissive dopant includes a ligand having a carbazole group.

Forrest, Stephen R.; Thompson, Mark; Giebink, Noel

2014-08-26T23:59:59.000Z

59

Light-emitting diode illumination design with a condensing sphere  

Science Journals Connector (OSTI)

An illumination system is described that comprises a glass or plastic sphere, an embedded light-emitting diode (LED) source, and a reflecting or scattering mirror. The rays from the...

Chi, Wanli; George, Nicholas

2006-01-01T23:59:59.000Z

60

Study on electroluminescence from porous silicon light-emitting diode  

Science Journals Connector (OSTI)

Porous silicon (PS) light-emitting diode (LED) with an ITO/PS/p-Si/Al structure was fabricated by anodic oxidation method. Photoluminescence (PL) of the PS LED was measured with a...

Yang, Yajun; Li, Qingshan; Liu, Xianyun

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Studying singlet fission and triplet fusion by magneto-electroluminescence method in singlet–triplet energy-resonant organic light-emitting diodes  

Science Journals Connector (OSTI)

Abstract Organic light emitting diodes (OLEDs) utilizing a singlet–triplet energy-resonant (ES ? 2ET) layer (rubrene) were fabricated to investigate the singlet fission and triplet fusion by the magneto-electroluminescence (MEL) of device from R.T. to 20 K. A large positive MEL (23.5%) was obtained at R.T. due to magnetic-field-suppressed singlet fission. With decreasing temperatures, the \\{MELs\\} changed their signs both at low-field and high-field components because of a gradual decrease in singlet fission simultaneously followed by an increasing triplet fusion, leading to a negative MEL around ?7.5% at 20 K. Moreover, transient electroluminescence and \\{MELs\\} from the control devices were used to further confirm the exciton fission and fusion processes in rubrene-based OLEDs. Our findings of MEL may provide a useful pathway to study the microscopic dynamics of excited states in organic optoelectronic devices.

J.W. Bai; P. Chen; Y.L. Lei; Y. Zhang; Q.M. Zhang; Z.H. Xiong; F. Li

2014-01-01T23:59:59.000Z

62

Thermally activated delayed fluorescence from {sup 3}n?* to {sup 1}n?* up-conversion and its application to organic light-emitting diodes  

SciTech Connect

Intense n?* fluorescence from a nitrogen-rich heterocyclic compound, 2,5,8-tris(4-fluoro-3-methylphenyl)-1,3,4,6,7,9,9b-heptaazaphenalene (HAP-3MF), is demonstrated. The overlap-forbidden nature of the n?* transition and the higher energy of the {sup 3}??* state than the {sup 3}n?* one lead to a small energy difference between the lowest singlet (S{sub 1}) and triplet (T{sub 1}) excited states of HAP-3MF. Green-emitting HAP-3MF has a moderate photoluminescence quantum yield of 0.26 in both toluene and doped film. However, an organic light-emitting diode containing HAP-3MF achieved a high external quantum efficiency of 6.0%, indicating that HAP-3MF harvests singlet excitons through a thermally activated T{sub 1} ? S{sub 1} pathway in the electroluminescent process.

Li, Jie; Zhang, Qisheng; Nomura, Hiroko [Department of Chemistry and Biochemistry, and Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Miyazaki, Hiroshi [Department of Chemistry and Biochemistry, and Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Functional Materials Laboratory, Nippon Steel and Sumikin Chemical Co., Ltd, 46–80 Nakabaru, Sakinohama, Tobata, Kitakyushu, Fukuoka 804–8503 (Japan); Adachi, Chihaya, E-mail: adachi@cstf.kyushu-u.ac.jp [Department of Chemistry and Biochemistry, and Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan)

2014-07-07T23:59:59.000Z

63

Enhancement of hole injection and electroluminescence by ordered Ag nanodot array on indium tin oxide anode in organic light emitting diode  

SciTech Connect

We report the enhancement of hole injection and electroluminescence (EL) in an organic light emitting diode (OLED) with an ordered Ag nanodot array on indium-tin-oxide (ITO) anode. Until now, most researches have focused on the improved performance of OLEDs by plasmonic effects of metal nanoparticles due to the difficulty in fabricating metal nanodot arrays. A well-ordered Ag nanodot array is fabricated on the ITO anode of OLED using the nanoporous alumina as an evaporation mask. The OLED device with Ag nanodot arrays on the ITO anode shows higher current density and EL enhancement than the one without any nano-structure. These results suggest that the Ag nanodot array with the plasmonic effect has potential as one of attractive approaches to enhance the hole injection and EL in the application of the OLEDs.

Jung, Mi, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Mo Yoon, Dang; Kim, Miyoung [Korea Printed Electronics Center, Korea Electronics Technology Institute, Jeollabuk-do, 561-844 (Korea, Republic of); Kim, Chulki; Lee, Taikjin; Hun Kim, Jae; Lee, Seok; Woo, Deokha, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Lim, Si-Hyung [School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)

2014-07-07T23:59:59.000Z

64

Using interlayer step-wise triplet transfer to achieve an efficient white organic light-emitting diode with high color-stability  

SciTech Connect

An efficient phosphorescent white organic light emitting-diode with a red-green-blue tri-emitting-layer structure is reported. The host of the red dopant possesses a lower triplet-energy than the green dye. An interlayer step-wise triplet transfer via blue dye ? green dye ? red host ? red dye is achieved. This mechanism allows an efficient triplet harvesting by the three dopants, thus maintaining a balanced white light and reducing energy loss. Moreover, the color stability of the device is improved significantly. The white device not only achieves a peak external quantum efficiency of 21.1?±?0.8% and power efficiency of 37.5?±?1.4?lm/W but shows no color shift over a wide range of voltages.

Wang, Qi [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin 130022 (China); Department of Electrical Engineering and Computer Sciences, College of Engineering, South Dakota State University, Brookings, South Dakota 57007 (United States); Ma, Dongge, E-mail: mdg1014@ciac.jl.cn; Ding, Junqiao; Wang, Lixiang [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin 130022 (China); Leo, Karl [Tech. Univ. Dresden, Inst. Angew. Photophys., D-01062 Dresden (Germany); Qiao, Qiquan [Department of Electrical Engineering and Computer Sciences, College of Engineering, South Dakota State University, Brookings, South Dakota 57007 (United States); Jia, Huiping; Gnade, Bruce E. [Department of Materials Science and Engineering and Erik Jonsson School of Engineering and Computer Science, University of Texas at Dallas, Richardson, Texas 75083 (United States)

2014-05-12T23:59:59.000Z

65

Method of making organic light emitting devices  

DOE Patents (OSTI)

The present invention provides a method for the preparation of organic light-emitting devices comprising a bilayer structure made by forming a first film layer comprising an electroactive material and an INP precursor material, and exposing the first film layer to a radiation source under an inert atmosphere to generate an interpenetrating network polymer composition comprising the electroactive material. At least one additional layer is disposed on the reacted first film layer to complete the bilayer structure. The bilayer structure is comprised within an organic light-emitting device comprising standard features such as electrodes and optionally one or more additional layers serving as a bipolar emission layer, a hole injection layer, an electron injection layer, an electron transport layer, a hole transport layer, exciton-hole transporting layer, exciton-electron transporting layer, a hole transporting emission layer, or an electron transporting emission layer.

Shiang, Joseph John (Niskayuna, NY); Janora, Kevin Henry (Schenectady, NY); Parthasarathy, Gautam (Saratoga Springs, NY); Cella, James Anthony (Clifton Park, NY); Chichak, Kelly Scott (Clifton Park, NY)

2011-03-22T23:59:59.000Z

66

Permanent polarization and charge distribution in organic light-emitting diodes (OLEDs): Insights from near-infrared charge-modulation spectroscopy of an operating OLED  

SciTech Connect

Vapor-deposited Alq{sub 3} layers typically possess a strong permanent electrical polarization, whereas NPB layers do not. (Alq{sub 3} is tris(8-quinolinolato)aluminum(III); NPB is 4,4?-bis[N-(1-naphthyl)-N-phenylamino]biphenyl.) The cause is a net orientation of the Alq{sub 3} molecules with their large dipole moments. Here we report on consequences for an organic light-emitting diode (OLED) with an NPB hole-transport layer and Alq{sub 3} electron-transport layer. The discontinuous polarization at the NPB|Alq{sub 3} interface has the same effect as a sheet of immobile negative charge there. It is more than compensated by a large concentration of injected holes (NPB{sup +}) when the OLED is running. We discuss the implications and consequences for the quantum efficiency and the drive voltage of this OLED and others. We also speculate on possible consequences of permanent polarization in organic photovoltaic devices. The concentration of NPB{sup +} was measured by charge-modulation spectroscopy (CMS) in the near infrared, where the NPB{sup +} has a strong absorption band, supplemented by differential-capacitance and current-voltage measurements. Unlike CMS in the visible, this method avoids complications from modulation of the electroluminescence and electroabsorption.

Marchetti, Alfred P.; Haskins, Terri L.; Young, Ralph H.; Rothberg, Lewis J. [Department of Chemistry, University of Rochester, Rochester, New York 14627 (United States)

2014-03-21T23:59:59.000Z

67

Organic light emitting devices for illumination  

SciTech Connect

An organic light emitting device an a method of obtaining illumination from such a device is provided. The device has a plurality of regions, each region having an organic emissive layer adapted to emit a different spectrum of light. The regions in combination emit light suitable for illumination purposes. The area of each region may be selected such that the device is more efficient than an otherwise equivalent device having regions of equal size. The regions may have an aspect ratio of at least about four. All parts of any given region may be driven at the same current.

Hack, Michael (Lambertville, NJ); Lu, Min-Hao Michael (Lawrenceville, NJ); Weaver, Michael S. (Princeton, NJ)

2012-01-24T23:59:59.000Z

68

Organic light emitting devices for illumination  

DOE Patents (OSTI)

An organic light emitting device is provided. The device has a plurality of regions, each region having an organic emissive layer adapted to emit a different spectrum of light. The regions in combination emit light suitable for illumination purposes. The area of each region may be selected such that the device is more efficient that an otherwise equivalent device having regions of equal size. The regions may have an aspect ratio of at least about four. All parts of any given region may be driven at the same current.

Hack, Michael (Lambertville, NJ); Lu, Min-Hao Michael (Lawrenceville, NJ); Weaver, Michael S. (Princeton, NJ)

2010-02-16T23:59:59.000Z

69

Full phosphorescent white-light organic light-emitting diodes with improved color stability and efficiency by fine tuning primary emission contributions  

SciTech Connect

In this paper, a novel type of white-light organic light emitting diode (OLED) with high color stability was reported, in which the yellow-light emission layer of (4,4{sup ?}-N,N{sup ?}-dicarbazole)biphenyl (CBP) : tris(2-phenylquinoline-C2,N{sup ?})iridium(III) (Ir(2-phq){sub 3}) was sandwiched by double blue-light emission layers of 1,1-bis-[(di-4-tolylamino)pheny1]cyclohexane (TAPC) : bis[4,6-(di-fluorophenyl)-pyridinato-N,C2{sup ?}]picolinate (FIrpic) and tris[3-(3-pyridyl)mesityl]borane (3TPYMB):FIrpic. And, it exhibited the maximum current efficiency of 33.1 cd/A, the turn-on voltage at about 3 V and the maximum luminance in excess of 20000 cd/m{sup 2}. More important, it realized very stable white-light emission, and its CIE(x, y) coordinates only shift from (0.34, 0.37) to (0.33, 0.37) as applied voltage increased from 5 V to 12 V. It is believed that the new scheme in emission layer of white-light OLED can fine tune the contribution of primary emission with applied voltage changed, resulting in high quality white-light OLED.

Hua, Wang, E-mail: wmsu2008@sinano.ac.cn, E-mail: wanghua001@tyut.edu.cn; Du, Xiaogang [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China) [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China); Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024 (China); Su, Wenming, E-mail: wmsu2008@sinano.ac.cn, E-mail: wanghua001@tyut.edu.cn; Zhang, Dongyu [Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, suzhou 215123 (China)] [Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, suzhou 215123 (China); Lin, Wenjing [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China) [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China); Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024 (China); Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, suzhou 215123 (China)

2014-02-15T23:59:59.000Z

70

Distinguishing triplet energy transfer and trap-assisted recombination in multi-color organic light-emitting diode with an ultrathin phosphorescent emissive layer  

SciTech Connect

An ultrathin layer of deep-red phosphorescent emitter tris(1-phenylisoquinoline) iridium (III) (Ir(piq){sub 3}) is inserted within different positions of the electron blocking layer fac-tris (1-phenylpyrazolato-N,C{sup 2?})-iridium(III) (Ir(ppz){sub 3}) to distinguish the contribution of the emission from the triplet exciton energy transfer/diffusion from the adjacent blue phosphorescent emitter and the trap-assisted recombination from the narrow band-gap emitter itself. The charge trapping effect of the narrow band-gap deep-red emitter which forms a quantum-well-like structure also plays a role in shaping the electroluminescent characteristics of multi-color organic light-emitting diodes. By accurately controlling the position of the ultrathin sensing layer, it is considerably easy to balance the white emission which is quite challenging for full-color devices with multiple emission zones. There is nearly no energy transfer detectable if 7 nm thick Ir(ppz){sub 3} is inserted between the blue phosphorescent emitter and the ultrathin red emitter.

Xue, Qin, E-mail: xueqin19851202@163.com; Liu, Shouyin [Department of Physical Science and Technology, Central China Normal University, Wuhan 430079 (China); Xie, Guohua; Chen, Ping; Zhao, Yi; Liu, Shiyong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

2014-03-21T23:59:59.000Z

71

The growth and characterization of a-sexithienyl–based light–emitting diodes  

Science Journals Connector (OSTI)

...voltage required to drive the light-emitting diode at 0.5 mA drops by about...voltage required to drive the light- emitting diode at 0.5 mA drops by about...from a conjugated polymer light-emitting diode--implications for efficiency...

1997-01-01T23:59:59.000Z

72

Depth of cure and compressive strength of dental composites cured with blue light emitting diodes (LEDs)  

E-Print Network (OSTI)

Depth of cure and compressive strength of dental composites cured with blue light emitting diodes with either a light emitting diode (LED) based light curing unit (LCU) or a conventional halogen LCU do reserved. Keywords: Blue light emitting diodes; Light curing unit; Composites; Irradiance; Spectrum; Depth

Ashworth, Stephen H.

73

THE FABRICATION AND ANALYSIS OF QUANTUM-DOT THIN FILM LIGHT EMITTING DIODES FOR USE IN DISPLAYS TECHNOLOGIES.  

E-Print Network (OSTI)

??The quantum dot has many applications, one of which is the light emitting diode. Quantum dot light emitting diodes were fabricated for their use in… (more)

Pickering, Shawn

2011-01-01T23:59:59.000Z

74

Co-sputtered Aluminum Doped Zinc Oxide Thin Film as Transparent Anode for Organic Light-emitting Diodes  

E-Print Network (OSTI)

Co-sputtered Aluminum Doped Zinc Oxide Thin Film as Transparent Anode for Organic Light and Technology, Clear Water Bay, Kowloon, Hong Kong, China ABSTRACT Aluminum doped zinc oxide (AZO that MTDATA matches better with AZO than CuPc, which served as hole injection layer. Keywords: Aluminum doped

75

Comparison of light out-coupling enhancements in single-layer blue-phosphorescent organic light emitting diodes using small-molecule or polymer hosts  

SciTech Connect

Single-layer blue phosphorescence organic light emitting diodes (OLEDs) with either small-molecule or polymer hosts are fabricated using solution process and the performances of devices with different hosts are investigated. The small-molecule device exhibits luminous efficiency of 14.7?cd/A and maximum power efficiency of 8.39?lm/W, which is the highest among blue phosphorescence OLEDs with single-layer solution process and small molecular hosts. Using the same solution process for all devices, comparison of light out-coupling enhancement, with brightness enhancement film (BEF), between small-molecule and polymer based OLEDs is realized. Due to different dipole orientation and anisotropic refractive index, polymer-based OLEDs would trap less light than small molecule-based OLEDs internally, about 37% better based simulation results. In spite of better electrical and spectroscopic characteristics, including ambipolar characteristics, higher carrier mobility, higher photoluminescence quantum yield, and larger triplet state energy, the overall light out-coupling efficiency of small molecule-based devices is worse than that of polymer-based devices without BEF. However, with BEF for light out-coupling enhancement, the improved ratio in luminous flux and luminous efficiency for small molecule based device is 1.64 and 1.57, respectively, which are significantly better than those of PVK (poly-9-vinylcarbazole) devices. In addition to the theoretical optical simulation, the experimental data also confirm the origins of differential light-outcoupling enhancement. The maximum luminous efficiency and power efficiency are enhanced from 14.7?cd/A and 8.39?lm/W to 23?cd/A and 13.2?lm/W, respectively, with laminated BEF, which are both the highest so far for single-layer solution-process blue phosphorescence OLEDs with small molecule hosts.

Chang, Yung-Ting [Institute of Chemistry, Academia Sinica, Taipei, Taiwan 11529, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan 10617, Taiwan (China); Liu, Shun-Wei [Department of Electronic Engineering, Mingchi University of Technology, New Taipei, Taiwan 24301, Taiwan (China); Yuan, Chih-Hsien; Lee, Chih-Chien [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan 10607, Taiwan (China); Ho, Yu-Hsuan; Wei, Pei-Kuen [Research Center for Applied Science Academia Sinica, Taipei, Taiwan 11527, Taiwan (China); Chen, Kuan-Yu [Chilin Technology Co., LTD, Tainan City, Taiwan 71758, Taiwan (China); Lee, Yi-Ting; Wu, Min-Fei; Chen, Chin-Ti, E-mail: cchen@chem.sinica.edu.tw, E-mail: chihiwu@cc.ee.ntu.edu.tw [Institute of Chemistry, Academia Sinica, Taipei, Taiwan 11529, Taiwan (China); Wu, Chih-I, E-mail: cchen@chem.sinica.edu.tw, E-mail: chihiwu@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan 10617, Taiwan (China)

2013-11-07T23:59:59.000Z

76

Establishing the operational durability of polymer light-emitting diodes  

SciTech Connect

This is the final report of a two-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). Recent research has made it clear that polymer light-emitting diodes (PLEDs) have all the necessary device attributes (efficiency, emission colors, operating voltage) required to build a successful display technology. This project was initiated to establish meaningful device operating lifetimes and to understand PLED failure mechanisms in order to control device reliability and ultimately produce a viable commercial product. A PLED lifetime testing capability was established to measure the change in PLED light output and drive voltage at constant current bias as a function of time for different current bias levels, operating temperatures and device (polymer) thickness. The dominant failure mechanism of the polymer light emitting diodes, occurring at less than 1000 hours of operation, was identified as delamination of the electron-injecting metal contact. A new electroabsorption technique to measure the electric field distribution inside the PLEDs was developed and then used to assess relative device reliability. 2 figs.

Campbell, I.H.; Davids, P.S.; Heller, C.M. [and others

1998-12-31T23:59:59.000Z

77

Microlens array diffuser for a light-emitting diode backlight system  

Science Journals Connector (OSTI)

Microlens array (MLA) diffusers for light-emitting diode (LED) backlight systems have been developed. A high fill-factor photoresist mold for the MLA was fabricated using...

Chang, Sung-Il; Yoon, Jun-Bo; Kim, Hongki; Kim, Jin-Jong; Lee, Baik-Kyu; Shin, Dong Ho

2006-01-01T23:59:59.000Z

78

Spatially correlated light emission from a resonant-cavity light-emitting diode  

Science Journals Connector (OSTI)

We present the angular-resolved intensity noise characteristics of a resonant-cavity light-emitting diode under quiet pumping conditions. Measurements by a sensitivity-enhanced...

Kappe, Philip; Kaiser, Joachim; Elsässer, Wolfgang

2003-01-01T23:59:59.000Z

79

Shelf life of five meat products displayed under light emitting diode or fluorescent lighting.  

E-Print Network (OSTI)

??Light emitting diode (LED) and fluorescent (FLS) lighting effects on enhanced pork loin chops, beef longissimus dorsi and semimembranosus steaks, ground beef, and ground turkey… (more)

Steele, Kyle Stover

2011-01-01T23:59:59.000Z

80

Nanocrystalline Silicon Quantum Dot Light Emitting Diodes Using Metal Oxide Charge Transport Layers.  

E-Print Network (OSTI)

??Silicon-based lighting show promise for display and solid state lighting use. Here we demonstrate a novel thin film light emitting diode device using nanocrystalline silicon… (more)

Zhu, Jiayuan

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Wavelength-stable rare earth-free green light-emitting diodes for energy efficiency  

Science Journals Connector (OSTI)

Solid state lighting seeks to replace both, incandescent and fluorescent lighting by energy efficient light-emitting diodes (LEDs). Just like compact fluorescent tubes, current white...

Wetzel, Christian; Detchprohm, Theeradetch

2011-01-01T23:59:59.000Z

82

Luminescence and Squeezing of a Superconducting Light Emitting Diode  

E-Print Network (OSTI)

We investigate a semiconductor $p$-$n$ junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the electroluminescence in a certain frequency window. We demonstrate that the tunneling of Cooper pairs induces an additional luminescence peak on resonance. There is a transfer of superconducting to photonic coherence which results in the emission of entangled photon pairs and squeezing of the fluctuations in the quadrature amplitudes of the emitted light. The squeezing angle can be electrically manipulated by changing the relative phase of the order parameters in the superconductors. We finally derive the conditions for lasing in the system and show that the laser threshold is reduced due to superconductivity. This shows how macroscopic coherence of a superconductor can be used to control the properties of light.

Patrik Hlobil; Peter P. Orth

2015-02-17T23:59:59.000Z

83

Luminescence and Squeezing of a Superconducting Light Emitting Diode  

E-Print Network (OSTI)

We investigate a semiconductor $p$-$n$ junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the electroluminescence in a certain frequency window. We demonstrate that the tunneling of Cooper pairs induces an additional luminescence peak on resonance. There is a transfer of superconducting to photonic coherence which results in the emission of entangled photon pairs and squeezing of the fluctuations in the quadrature amplitudes of the emitted light. The squeezing angle can be electrically manipulated by changing the relative phase of the order parameters in the superconductors. We finally derive the conditions for lasing in the system and show that the laser threshold is reduced due to superconductivity. This shows how macroscopic coherence of a superconductor can be used to control the properties of light.

Hlobil, Patrik

2015-01-01T23:59:59.000Z

84

Semiconductor Nanocrystals-Based White Light Emitting Diodes  

SciTech Connect

In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid state lighting, such as white light emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement could cut the ever-increasing energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, we highlight the recent progress in semiconductor nanocrystals-based WLEDs, compare different approaches for generating white light, and discuss the benefits and challenges of the solid state lighting technology.

Dai, Quanqin [ORNL; Hu, Michael Z. [ORNL; Duty, Chad E [ORNL

2010-01-01T23:59:59.000Z

85

Genetic algorithms used for the optimization of light-emitting diodes and solar thermal collectors  

E-Print Network (OSTI)

Genetic algorithms used for the optimization of light-emitting diodes and solar thermal collectors developed for the optimization of light-emitting diodes (LED) and solar thermal collectors. The surface a light-extraction efficiency of only 3.7%). The solar thermal collector we considered consists

Mayer, Alexandre

86

Facile Fabrication of Free-Standing Light Emitting Diode by Combination of Wet Chemical Etchings  

Science Journals Connector (OSTI)

Facile Fabrication of Free-Standing Light Emitting Diode by Combination of Wet Chemical Etchings ... Free-standing GaN light-emitting diode (LED) structure with high crystalline quality was fabricated by combining electrochemical and photoelectrochemical etching followed by regrowth of LED structure and subsequent mechanical detachment from a substrate. ...

Lee-Woon Jang; Dae-Woo Jeon; Tae-Hoon Chung; Alexander Y. Polyakov; Han-Su Cho; Jin-Hyeon Yun; Jin-Woo Ju; Jong-Hyeob Baek; Joo-Won Choi; In-Hwan Lee

2013-12-25T23:59:59.000Z

87

Phosphorescent Light–Emitting Iridium Complexes Serve as a Hypoxia-Sensing Probe for Tumor Imaging in Living Animals  

Science Journals Connector (OSTI)

...complex is a promising organic light-emitting diode material for next generation...required for use as organic light-emitting diode emitters. Furthermore, we...complex is a promising organic light-emitting diode material for next generation...

Shaojuan Zhang; Masahiro Hosaka; Toshitada Yoshihara; Kazuya Negishi; Yasuhiko Iida; Seiji Tobita; Toshiyuki Takeuchi

2010-06-01T23:59:59.000Z

88

City of Phildelphia: Light emitting diodes for traffic signal displays  

SciTech Connect

This project investigated the feasibility of using light emitting diodes (LEDs) for red traffic signals in a demonstration program at 27 signalized intersections in the City of Philadelphia. LED traffic signals have the potential to achieve significant savings over standard incandescent signals in terms of energy usage and costs, signal relamping costs, signal system maintenance costs, tort liability, and environmental impact. Based on successful experience with the demonstration program, the City of Philadelphia is currently developing funding for the conversion of all existing red incandescent traffic signals at approximately 2,700 intersections to LED signals. This program is expected to cost approximately $4.0 million and save about $850,000 annually in energy costs. During late 1993 and early 1994, 212 red LED traffic signals (134 8-inch signals and 78 12-inch signals) were installed at 27 intersections in Philadelphia. The first group of 93 signals were installed at 13 prototypical intersections throughout the City. The remaining group of signals were installed on a contiguous route in West Philadelphia consisting of standard incandescent signals and LED signals interspersed in a random pattern.

NONE

1995-12-01T23:59:59.000Z

89

Efficiency Droop Effect Reduction in a Light-emitting Diode with Surface Plasmon Coupling  

Science Journals Connector (OSTI)

The efficiency droop effect of a light-emitting diode is significantly reduced through the coherent coupling of its emitting quantum wells with the surface plasmons generated on the...

Lu, Chih-Feng; Liao, Che-Hao; Chen, Chih-Yen; Hsieh, Chieh; Yang, C C

90

Influence of optical fibers on the spectrum of transmitted light-emitting-diode radiation  

Science Journals Connector (OSTI)

Propagation of GaxIn1–xAsyP1–y light-emitting-diode radiation through an optical fiber was found to affect its spectral curve very strongly, and the origin of...

Zavadil, Jirí; Honc, Tomáš; Ctyroký, Jirí

1995-01-01T23:59:59.000Z

91

High-Precision Fluorimetry with a Light-Emitting Diode Source  

Science Journals Connector (OSTI)

A simple fluorimeter which uses a light-emitting diode as a source of excitation and a photodiode as a detector has been constructed and evaluated. The exceptional stability of both...

Smith, B W; Jones, B T; Winefordner, J D

1988-01-01T23:59:59.000Z

92

Micro- and Sub-nanosecond Lifetime Measurements Using a UV Light-Emitting Diode  

Science Journals Connector (OSTI)

The authors describe the use of an ultraviolet light-emitting diode (UV LED), Nichia NSHU590E, as a 373 nm excitation light source for fluorescence lifetime measurements. A...

Szmacinski, Henryk; Chang, Qing

2000-01-01T23:59:59.000Z

93

Designing light-emitting diode arrays for uniform near-field irradiance  

Science Journals Connector (OSTI)

We analyze the first-order design of light sources consisting of multiple light-emitting diodes (LEDs) to uniformly illuminate a near target plane by considering each single LED as...

Moreno, Ivan; Avendaño-Alejo, Maximino; Tzonchev, Rumen I

2006-01-01T23:59:59.000Z

94

Angle-tuned, evanescently-decoupled reflector for high-efficiency red light-emitting diode  

Science Journals Connector (OSTI)

We propose and demonstrate evanescently-decoupled, solid-angle-optimized distributed Bragg reflectors (DBRs) for AlGaInP light-emitting diodes (LEDs). The thickness of each DBR layer...

Kim, Sun-Kyung; Cho, Hyun K; Park, Kyung K; Jang, Junho; Lee, Jeong S; Park, Kyung W; Park, Youngho; Kim, Ju-Young; Lee, Yong-Hee

2008-01-01T23:59:59.000Z

95

Compact light-emitting-diode sun photometer for atmospheric optical depth measurements  

Science Journals Connector (OSTI)

A new compact light-emitting diode (LED) sun photometer, in which a LED is used as a spectrally selective photodetector as well as a nonlinear feedback element in the operational...

Acharya, Y B; Jayaraman, A; Ramachandran, S; Subbaraya, B H

1995-01-01T23:59:59.000Z

96

Light extraction analysis and enhancement in a quantum dot light emitting diode  

Science Journals Connector (OSTI)

We apply a rigorous dipole model to analyze the light outcoupling and angular performance of quantum dot light emitting diode (QLED). To illustrate the design principles, we use a red...

Zhu, Ruidong; Luo, Zhenyue; Wu, Shin-Tson

2014-01-01T23:59:59.000Z

97

Wideband squeezing in photon number fluctuations from a high-speed light-emitting diode  

Science Journals Connector (OSTI)

Wideband, highly noise-suppressed squeezing was observed by using a high-speed, high-quantum-efficiency light-emitting diode. The squeezing bandwidth extended over 200 MHz.

Abe, Jun'ichi; Kuga, Takahiro; Hirano, Takuya; Kobayashi, Masahide; Yamanishi, Masamichi

2000-01-01T23:59:59.000Z

98

Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes  

E-Print Network (OSTI)

2/2014 Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Layer for Efficient Hole-Injection in Quantum Dot Light- Emitting Diodes Xuyong Yang, Evren Mutlugun-based devices, the organic interfacial buffer layers have inferior thermal stability. Efforts to replace PEDOT

Demir, Hilmi Volkan

99

Diffusion injected multi-quantum well light-emitting diode structure  

SciTech Connect

The attention towards light-emitting diode (LED) structures based on nanowires, surface plasmon coupled LEDs, and large-area high-power LEDs has been increasing for their potential in increasing the optical output power and efficiency of LEDs. In this work we demonstrate an alternative way to inject charge carriers into the active region of an LED, which is based on completely different current transport mechanism compared to conventional current injection approaches. The demonstrated structure is expected to help overcoming some of the challenges related to current injection with conventional structures. A functioning III-nitride diffusion injected light-emitting diode structure, in which the light-emitting active region is located outside the pn-junction, is realized and characterized. In this device design, the charge carriers are injected into the active region by bipolar diffusion, which could also be utilized to excite otherwise challenging to realize light-emitting structures.

Riuttanen, L., E-mail: lauri.riuttanen@aalto.fi; Nykänen, H.; Svensk, O.; Suihkonen, S.; Sopanen, M. [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto (Finland); Kivisaari, P.; Oksanen, J.; Tulkki, J. [Department of Biomedical Engineering and Computational Science, Aalto University, P.O. Box 12200, FI-00076 Aalto (Finland)

2014-02-24T23:59:59.000Z

100

Concave-hemisphere-patterned organic top-light emitting device  

DOE Patents (OSTI)

A first device is provided. The first device includes an organic light emitting device, which further comprises a first electrode, a second electrode, and an organic emissive layer disposed between the first and second electrode. Preferably, the second electrode is more transparent than the first electrode. The organic emissive layer has a first portion shaped to form an indentation in the direction of the first electrode, and a second portion shaped to form a protrusion in the direction of the second electrode. The first device may include a plurality of organic light emitting devices. The indentation may have a shape that is formed from a partial sphere, a partial cylinder, a pyramid, or a pyramid with a mesa, among others. The protrusions may be formed between adjoining indentations or between an indentation and a surface parallel to the substrate.

Forrest, Stephen R; Slootsky, Michael; Lunt, Richard

2014-01-21T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

DOE Science Showcase - Light-emitting Diode (LED) Lighting Research | OSTI,  

Office of Scientific and Technical Information (OSTI)

Science Showcase - Light-emitting Diode (LED) Lighting Research Science Showcase - Light-emitting Diode (LED) Lighting Research Light-emitting diode (LED) lighting is a type of solid-state lighting that uses a semiconductor to convert electricity to light. LED lighting products are beginning to appear in a wide variety of home, business, and industrial products such as holiday lighting, replacement bulbs for incandescent lamps, street lighting, outdoor area lighting and indoor ambient lighting. Over the past decade, LED technology research and development supported by the U.S. Department of Energy (DOE) has yielded impressive improvements in the cost, color performance, light output, efficacy, reliability, lifetime, and manufacturability of LED products and this upward trend is expected to continue. Read about the latest DOE research, the technology behind LEDs,

102

Energy Savings Estimates of Light Emitting Diodes in Niche Lighting Applications  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Savings Estimates of Light Emitting Diodes Savings Estimates of Light Emitting Diodes in Niche Lighting Applications Prepared for: Building Technologies Program Office of Energy Efficiency and Renewable Energy U.S. Department of Energy Prepared by: Navigant Consulting Inc. 1801 K Street, NW Suite 500 Washington DC, 20006 September 2008 * Department of Energy Washington, DC 20585 Energy Savings Estimates of Light Emitting Diodes in Niche Lighting Applications Released: September 2008 Revised: October 2008 This DOE report presents research findings for twelve different niche markets where LEDs are competing or poised to compete with traditional light sources (e.g., incandescent and fluorescent). Estimates of the energy saved due to current levels of LED market penetration as well as estimates of potential energy savings if these markets switched completely to LEDs

103

Organic light emitting device structure for obtaining chromaticity stability  

DOE Patents (OSTI)

The present invention relates to organic light emitting devices (OLEDs). The devices of the present invention are efficient white or multicolored phosphorescent OLEDs which have a high color stability over a wide range of luminances. The devices of the present invention comprise an emissive region having at least two emissive layers, with each emissive layer comprising a different host and emissive dopant, wherein at least one of the emissive dopants emits by phosphorescence.

Tung, Yeh-Jiun (Princeton, NJ); Ngo, Tan (Levittown, PA)

2007-05-01T23:59:59.000Z

104

Organic light emitting device having multiple separate emissive layers  

DOE Patents (OSTI)

An organic light emitting device having multiple separate emissive layers is provided. Each emissive layer may define an exciton formation region, allowing exciton formation to occur across the entire emissive region. By aligning the energy levels of each emissive layer with the adjacent emissive layers, exciton formation in each layer may be improved. Devices incorporating multiple emissive layers with multiple exciton formation regions may exhibit improved performance, including internal quantum efficiencies of up to 100%.

Forrest, Stephen R. (Ann Arbor, MI)

2012-03-27T23:59:59.000Z

105

The Effect of Light Emitting Diode Phototherapy on the Rate of Orthodontic Tooth Movement - A Clinical Study.  

E-Print Network (OSTI)

??Increasing the rate of orthodontic tooth movement (OTM) can reduce risks such as periodontal disease and caries. This study investigated whether light emitting diode (LED)… (more)

Chung, Sean

2013-01-01T23:59:59.000Z

106

SciTech Connect: "light emitting diode"  

Office of Scientific and Technical Information (OSTI)

"light emitting diode" Find "light emitting diode" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office,

107

Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays  

DOE Patents (OSTI)

Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

Rogers, John A; Nuzzo, Ralph; Kim, Hoon-sik; Brueckner, Eric; Park, Sang Il; Kim, Rak Hwan

2014-10-21T23:59:59.000Z

108

Color optimization of conjugated-polymer/InGaN Hybrid white light emitting diodes by incomplete energy transfer  

Science Journals Connector (OSTI)

Abstract By using the wavelength conversion method, white light emitting diodes (WLEDs) were produced by applying mixtures of polysiloxane and fluorescent polymers on InGaN based light emitting diodes. UV curable organic–inorganic hybrid materials with high refractive index (1.561), compromised optical, thermal and mechanical properties was used as encapsulants. Red light emitting fluorescent FABD polymer (with 9,9-dioctylfluorene (F), anthracene (A) and 2,1,3-benzothiadiazole (B), and 4,7-bis(2-thienyl)-2,1,3-benzothiadiazole (D) repeating units) and green light emitting fluorescent FAB polymer were used as wavelength converters. The encapsulant/fluorescent polymer mixture and InGaN produce the white light by incomplete energy transfer mechanism. \\{WLEDs\\} with high color rendering index (CRI, about 93), and tunable correlated color temperature (CCT) properties can be produced by controlling the composition and chemical structures of encapsulating polymer and fluorescent polymer in hybrid materials, offering cool-white and neutral-white LEDs.

Chi-Jung Chang; Chun-Feng Lai; P. Madhusudhana Reddy; Yung-Lin Chen; Wei-Yung Chiou; Shinn-Jen Chang

2014-01-01T23:59:59.000Z

109

Understanding Drooping Light Emitting Diodes CEEM | U.S. DOE Office of  

Office of Science (SC) Website

Understanding Drooping Light Emitting Understanding Drooping Light Emitting Diodes CEEM Energy Frontier Research Centers (EFRCs) EFRCs Home Centers Research Science Highlights Highlight Archives News & Events Publications Contact BES Home 04.27.12 Understanding Drooping Light Emitting Diodes CEEM Print Text Size: A A A RSS Feeds FeedbackShare Page Scientific Achievement New calculations demonstrate that LED "droop" is dominated by multi-particle interactions. Droop occurs when increasing energy input does not produce proportionally more light. Significance and Impact Understanding "droop" may result in cheaper, more efficient LEDs; LEDs are more energy efficient, smaller, and longer-lived than incandescent lamps or fluorescent lighting. Research Details Atomistic first-principles calculations indicated that increasing amounts

110

Tunnel junction multiple wavelength light-emitting diodes  

DOE Patents (OSTI)

A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect. 5 figs.

Olson, J.M.; Kurtz, S.R.

1992-11-24T23:59:59.000Z

111

Light-Emitting Diodes in the Solid-State Lighting Systems  

E-Print Network (OSTI)

Red and green light-emitting diodes (LEDs) had been produced for several decades before blue emitting diodes, suitable for lighting applications, were widely available. Today, we have the possibility of combining the three fundamental colours to have a bright white light. And therefore, a new form of lighting, the solid-state lighting, has now become a reality. Here we discuss LEDs and some of their applications in displays and lamps.

Sparavigna, Amelia Carolina

2014-01-01T23:59:59.000Z

112

Synthesis and optical properties of cadmium selenide quantum dots for white light-emitting diode application  

SciTech Connect

Highlights: ? Stable CdSe QDs were synthesized by the one-step and two-level process respectively. ? The fabricated white LEDs show good white balance. ? CdSe QDs present well green to yellow band luminescence. ? CdSe QDs displayed a broad excitation band. - Abstract: Yellow light-emitting cadmium selenide quantum dots were synthesized using one-step and two-step methods in an aqueous medium. The structural luminescent properties of these quantum dots were investigated. The obtained cadmium selenide quantum dots displayed a broad excitation band suitable for blue or near-ultraviolet light-emitting diode applications. White light-emitting diodes were fabricated by coating the cadmium selenide samples onto a 460 nm-emitting indium gallium nitrite chip. Both samples exhibited good white balance. Under a 20 mA working current, the white light-emitting diode fabricated via the one-step and two-step methods showed Commission Internationale de l’Éclairage coordinates at (0.27, 0.23) and (0.27, 0.33), respectively, and a color rendering index equal to 41 and 37, respectively. The one-step approach was simpler, greener, and more effective than the two-step approach. The one-step approach can be enhanced by combining cadmium selenide quantum dots with proper phosphors.

Xu, Xianmei; Wang, Yilin; Gule, Teri; Luo, Qiang [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Zhou, Liya, E-mail: zhouliyatf@163.com [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China); Gong, Fuzhong [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 53000 (China)

2013-03-15T23:59:59.000Z

113

Enhanced performance of organic light-emitting diodes (OLEDs) and OLED-based photoluminescent sensing platforms by novel microstructures and device architectures  

SciTech Connect

After a general introduction to OLEDs and OLED-based PL sensors, the transient emission mechanism of guest-host OLEDs is described both experimentally and theoretically. A monolithic and easy-to-apply process is demonstrated for fabricating multicolor microcavity OLEDs (that improve the sensor platform). The outcoupling issues of OLEDs at the substrate/air interface are addressed by using a microstructured polymer film resulting from a PS and polyethylene glycol (PEG) mixture. Based on the understanding of OLEDs and their improvement, research was done in order to realize integrated all organic-based O{sub 2} and pH sensors with improved signal intensity and sensitivity. The sensor design modification and optimization are summarized

Liu, Rui [Ames Laboratory

2012-08-01T23:59:59.000Z

114

Semiconductor-Nanocrystals-Based White Light-Emitting Diodes  

SciTech Connect

In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white lightemitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

Dai, Quanqin [ORNL; Duty, Chad E [ORNL; Hu, Michael Z. [ORNL

2010-01-01T23:59:59.000Z

115

Is the light emitting diode (LED) an ultimate lamp?  

Science Journals Connector (OSTI)

Simple diagrams are used to show the transformation of a thin “slab” of intrinsic semiconductor (direct gap k elec =k hole ) from an ideal “flat-band” photopumped recombination-radiation light source into an ultimate lamp a p–n junctionlight emitting diode(LED). A photoexcited intrinsic slab of semiconductor can be regarded as an ideal (“flat-band”) light source with however the photogenerated carriers and voltage available externally instead of as recombination radiation (light) if the slab is converted to half p type (one side) and half n type (the other side) i.e. to a p–n junction. If an equal a “bucking ” external voltage is applied resulting in an input current when the photoexcitation is removed the slab becomes again (remains) an ideal “flat-band” light source a p–n junctionLED. In practice the LED takes the form of a p–n heterostructure in order to improve electron–hole injection reduce the absorption of recombination radiation and to make possible—with proper geometries—improved photon escape.

N. Holonyak Jr.

2000-01-01T23:59:59.000Z

116

SciTech Connect: "light emitting diodes"  

Office of Scientific and Technical Information (OSTI)

light emitting diodes" Find light emitting diodes" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

117

An Engineering-Economic Analysis of White Light-Emitting Diodes for General  

NLE Websites -- All DOE Office Websites (Extended Search)

An Engineering-Economic Analysis of White Light-Emitting Diodes for General An Engineering-Economic Analysis of White Light-Emitting Diodes for General Illumination for the U.S. Residential and Commercial Sectors Speaker(s): Inês Magarida Lima de Azevedo Date: February 15, 2008 - 12:00pm Location: 90-3122 Because lighting constitutes more than 20% of total US electricity consumption, and many current lighting technologies are highly inefficient, improved technologies for lighting hold great potential for energy savings and for reducing associated greenhouse gas emissions. Solid-state lighting is a technology that shows great promise as a source of efficient, affordable, color-balanced white light in the near future. Indeed, under a pure engineering-economic analysis, solid-state lighting already performs better than incandescent bulbs and is expected to surpass the most

118

Amber light-emitting diode comprising a group III-nitride nanowire active region  

DOE Patents (OSTI)

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

2014-07-22T23:59:59.000Z

119

Triplet Energy Confinement Effect in Blue Phosphorescent Organic Light Emitting Devices  

Science Journals Connector (OSTI)

The Effects of triplet energy confinement and charge balance by hole and electron transport layers are investigated on blue phosphorescent organic light emitting devices (PHOLEDs).

Lee, Jaewon; Chopra, Neetu; So, Franky

120

Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)  

SciTech Connect

A vertical ultraviolet (UV) light-emitting diode (LED) that does not require substrate removal is developed. Spontaneous via holes are formed in n-AlN layer epitaxially grown on a high conductive n+Si substrate and the injected current flows directly from the p-electrode to high doped n{sup +} Si substrate through p-AlGaN, multi-quantum wells, n-AlGaN and spontaneous via holes in n-AlN. The spontaneous via holes were formed by controlling feeding-sequence of metal-organic gas sources and NH{sub 3} and growth temperature in MOCVD. The via holes make insulating n-AlN to be conductive. We measured the current-voltage, current-light intensity and emission characteristics of this device. It exhibited a built-in voltage of 3.8 V and emission was stated at 350 nm from quantum wells with successive emission centered at 400?nm. This UV LED can be produced, including formation of n and p electrodes, without any resist process.

Kurose, N., E-mail: kurose@fc.ritsumei.ac.jp; Aoyagi, Y. [The Research Organization of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan)] [The Research Organization of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan); Shibano, K.; Araki, T. [Department of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan)] [Department of Science and Technology, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577 (Japan)

2014-02-15T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Fabrication and Characterization of a GaN Light-emitting Diode (LED) with a Centered Island Cathode  

Science Journals Connector (OSTI)

Uniform spreading of injection current in light-emitting diodes (LEDs) is one of the crucial requirements for better device performances. It is reported that non-uniform current...

Park, Yun Soo; Lee, Hwan Gi; Yang, Chung-Mo; Kim, Dong-Seok; Bae, Jin-Hyuk; Cho, Seongjae; Lee, Jung-Hee; Kang, In Man

2012-01-01T23:59:59.000Z

122

Active packing method for blue light-emitting diodes with photosensitive polymerization: formation of self-focusing encapsulates  

Science Journals Connector (OSTI)

A novel light-emitting diode (LED) packaging method, named the active packaging (AP) method, is presented in this paper. In this method, during the LED packaging process, the light...

Wang, Hao; Ryu, Jae-Hyoung; Lee, Kyu-Seung; Tan, Chun Hua; Jin, Lihua; Li, Songmei; Hong, Chang-Hee; Cho, Yong-Hoon; Liu, Songhao

2008-01-01T23:59:59.000Z

123

Enhancing the Light Extraction of InGaN Light-Emitting Diodes by Patterning the Dicing Streets  

Science Journals Connector (OSTI)

Patterning the dicing streets technology was used to define the high extraction efficiency region of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The external quantum...

Lin, Hung Cheng; Tseng, Yen Chun; Chyi, Jen Inn; Lee, Chia Ming

124

Highly Efficient Bipolar Host Materials with Indenocarbazole and Pyrimidine Moieties for Phosphorescent Green Light-Emitting Diodes  

Science Journals Connector (OSTI)

Highly Efficient Bipolar Host Materials with Indenocarbazole and Pyrimidine Moieties for Phosphorescent Green Light-Emitting Diodes ... Cyclic voltammetry characteristics, energy diagram of fabricated devices, and synthetic processes of DPICz1 and DPICz2. ...

Gyeong Heon Kim; Raju Lampande; Mi Jin Park; Hyeong Woo Bae; Ji Hoon Kong; Jang Hyuk Kwon; Jung Hwan Park; Yong Wook Park; Choong Eui Song

2014-11-17T23:59:59.000Z

125

Use of light-emitting diodes as light sources to lower energy consumption for cultivation of photosynthesizing microorganisms  

Science Journals Connector (OSTI)

Experimental data are cited for the productivity of phototrophs subjected to interrupted illumination by light-emitting diodes. It is demonstrated that a significant reduction in energy consumption for the produc...

2011-03-01T23:59:59.000Z

126

Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model  

SciTech Connect

We propose a model to better investigate InGaN light-emitting diode (LED) internal efficiency by extending beyond the usual total carrier density rate equation approach. To illustrate its capability, the model is applied to study intrinsic performance differences between violet and green LEDs. The simulations show performance differences, at different current densities and temperatures, arising from variations in spontaneous emission and heat loss rates. By tracking the momentum-resolved carrier populations, these rate changes are, in turn, traced to differences in bandstructure and plasma heating. The latter leads to carrier distributions that deviate from the quasiequilibrium ones at lattice temperature.

Chow, Weng W.; Crawford, Mary H.; Tsao, Jeffrey Y.; Kneissl, Michael

2010-01-01T23:59:59.000Z

127

Effective hole-injection layer for non-doped inverted top-emitting organic light-emitting devices  

Science Journals Connector (OSTI)

Non-doped inverted top-emitting organic light-emitting diode with high efficiency is demonstrated through employing an effective hole-injection layer composed of MoO"x. One reason for high efficiency lies on the energy-level matching between MoO"x and ... Keywords: 78.60.Fi, 82.45.Mp, 85.60.Jb, Hole-injection, ITEOLEDs, MoOx

Yanlong Meng; Wenfa Xie; Ning Zhang; Shufen Chen; Jiang Li; Wei Hu; Yi Zhao; Jingying Hou; Shiyong Liu

2008-05-01T23:59:59.000Z

128

Physical properties and design of light-emitting devices based on organic materials and nanoparticles  

E-Print Network (OSTI)

This thesis presents the detailed experimental and theoretical characterization of light-emitting devices (LEDs) based on organic semiconductors and colloidal quantum dots (QDs). This hybrid material system has several ...

Anikeeva, Polina Olegovna

2009-01-01T23:59:59.000Z

129

Is it viable to improve light output efficiency by nano-light-emitting diodes?  

SciTech Connect

Nanopillar arrays with InGaN/GaN multiple-quantum-disks (MQDs) are fabricated by focused-ion-beam milling with surface damage layer removed by KOH wet etching. Nano-light-emitting diodes (Nano-LEDs) made of the InGaN/GaN MQD nanopillars are found to have 19.49% less output power than that of a conventional LED. The reasons are analyzed in detail and considering their current-voltage and electroluminescence characteristics, internal quantum efficiency, external quantum efficiency, light extraction, and wall-plug efficiency. Our results suggest that nanopillar-LED can outperform if the density can be increased to 2.81?×?10{sup 9}?cm{sup ?2} with the size unchanged or the size can be increased to 854.4?nm with the density unchanged.

Wang, Chao-Hung; Huang, Yu-Wen [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)] [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Wu, Shang-En [Genesis Photonics Incorporation, Tainan 70101, Taiwan (China)] [Genesis Photonics Incorporation, Tainan 70101, Taiwan (China); Liu, Chuan-Pu, E-mail: cpliu@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China) [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (China)

2013-12-02T23:59:59.000Z

130

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

131

A spin light emitting diode incorporating ability of electrical helicity switching  

SciTech Connect

Fabrication and optical characteristics of a spin light-emitting-diode (spin-LED) having dual spin-injection electrodes with anti-parallel magnetization configuration are reported. Alternating a current between the two electrodes using a computer-driven current source has led us to the observation of helicity switching of circular polarization at the frequency of 1 kHz. Neither external magnetic fields nor optical delay modulators were used. Sending dc-currents to both electrodes with appropriate ratio has resulted in continuous variation of circular polarization between the two opposite helicity, including the null polarization. These results suggest that the tested spin-LED has the feasibility of a monolithic light source whose circular polarization can be switched or continuously tuned all electrically.

Nishizawa, N., E-mail: nishizawa@isl.titech.ac.jp; Nishibayashi, K.; Munekata, H. [Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-J3-15 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

2014-03-17T23:59:59.000Z

132

Green light emitting diode grown on thick strain-reduced GaN template  

Science Journals Connector (OSTI)

Abstract We report a green light-emitting diode (LED) grown on thick strain-reduced GaN template. As the injection current changes from 20 mA to 120 mA, blue-shift of EL peak wavelength reduces from 9.3 nm for the LED on sapphire substrate to 6.8 nm for the LED grown on thick strain-reduced GaN template. Furthermore, the light output power and external quantum efficiency of the LED on thick strain-reduced GaN template are respectively 1.48 mW and 2.5% at the forward current of 20 mA, which is twice as much as the LED on sapphire substrate. In contrast, the reverse current is 2 ?A lower than that of the LED on the sapphire at ?8 V.

Jiankun Yang; Tongbo Wei; Qiang Hu; Ziqiang Huo; Baojuan Sun; Ruifei Duan; Junxi Wang

2015-01-01T23:59:59.000Z

133

An Optically Stabilized Fast-Switching Light Emitting Diode as a Light Source for Functional  

E-Print Network (OSTI)

experimental setups. This paper presents a method to control the brightness of a high-power light emitting

Daniel A. Wagenaar

134

Excitation resolved color conversion of CdSe/ZnS core/shell quantum dot solids for hybrid white light emitting diodes  

E-Print Network (OSTI)

-volume spectrum-specific applications in- cluding scotopic street lighting, greenhouse lighting, and high-CRI warm light emitting diodes Sedat Nizamoglu and Hilmi Volkan Demira Department of Electrical and Electronics light emitting diodes LEDs , we present spectrally resolved relative quantum efficiency and relative

Demir, Hilmi Volkan

135

InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer  

Science Journals Connector (OSTI)

...Wang. 2011 Electrical characteristics of vertical light emitting diode with n-type contact on a selectively wet-etching...Measurement of electron overflow in 450 nm InGaN light-emitting diode structures. Appl. Phys. Lett. 94, 061116...

2013-01-01T23:59:59.000Z

136

NANOSTRUCTURED HIGH PERFORMANCE ULTRAVIOLET AND BLUE LIGHT EMITTING DIODES FOR SOLID STATE LIGHTING  

SciTech Connect

We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the first 12 month contract period include (1) new means of synthesizing zero- and one-dimensional GaN nanostructures, (2) establishment of the building blocks for making GaN-based microcavity devices, and (3) demonstration of top-down approach to nano-scale photonic devices for enhanced spontaneous emission and light extraction. These include a demonstration of eight-fold enhancement of the external emission efficiency in new InGaN QW photonic crystal structures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

Arto V. Nurmikko; Jung Han

2004-10-01T23:59:59.000Z

137

Green Light-Emitting Diode Makes Highly Efficient White Light, The Spectrum of Clean Energy Innovation (Fact Sheet)  

NLE Websites -- All DOE Office Websites (Extended Search)

Spectrum of Spectrum of Clean Energy Innovation innovati n Green Light-Emitting Diode Makes Highly Efficient White Light Scientists at the National Renewable Energy Laboratory (NREL) have invented a deep green light-emitting diode (LED) that can lead to higher efficiency white light, which is of prime value in the indoor lighting world. LEDs are fundamentally solar cells operating in reverse-that is, when an electrical current is applied to a thin-film semiconductor, the result is the emission of light. These devices are a key technology for producing a new generation of efficient lighting, in which the amount of light generated far outweighs the amount of heat produced. But at the moment, LEDs that emit white light are produced using an inefficient process known as phosphor conversion. In this process, light from a blue- or ultraviolet-emitting LED energizes

138

Intermediate connector for stacked organic light emitting devices  

DOE Patents (OSTI)

A device is provided, having an anode, a cathode, and an intermediate connector disposed between the anode and the cathode. A first organic layer including an emissive sublayer is disposed between the anode and the intermediate connector, and a second including an emissive sublayer is disposed between the intermediate connector and the cathode. The intermediate connector includes a first metal having a work function lower than 4.0 eV and a second metal having a work function lower than 5.0 eV. The work function of the first metal is at least 0.5 eV less than the work function of the second metal. The first metal is in contact with a sublayer of the second organic layer that includes a material well adapted to receive holes from a low work function metal.

D'Andrade, Brian

2013-02-12T23:59:59.000Z

139

Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics  

Science Journals Connector (OSTI)

...hybrid organic/inorganic light-emitting diode using azide-functionalized...azide hybridized on near-UV light emitting diode for high color rendering index...hybrid organic/inorganic light emitting diode using azide functionalized...

2013-01-01T23:59:59.000Z

140

Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices  

SciTech Connect

Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm{sup 2}, the optimal radiance R could reach 0.38 mW/cm{sup 2}, and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be {approx} 10{sup -5} cm{sup 2}/Vs and {approx} 10{sup -4} cm{sup 2}/Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces.

Lijuan Zou

2003-08-05T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Organic light-emitting device with a phosphor-sensitized fluorescent emission layer  

DOE Patents (OSTI)

The present invention relates to organic light emitting devices (OLEDs), and more specifically to OLEDS that emit light using a combination of fluorescent emitters and phosphorescent emitters. The emissive region of the devices of the present invention comprise at least one phosphor-sensitized layer which has a combined emission from a phosphorescent emitter and a fluorescent emitter. In preferred embodiments, the invention relates to white-emitting OLEDS (WOLEDs).

Forrest, Stephen (Ann Arbor, MI); Kanno, Hiroshi (Osaka, JP)

2009-08-25T23:59:59.000Z

142

GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition  

SciTech Connect

Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar GaN-graphene diodes. The suspended graphene remains electrically stable up to 300?°C in air. The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications.

Xu, Kun; Xu, Chen, E-mail: xuchen58@bjut.edu.cn; Deng, Jun; Zhu, Yanxu; Guo, Weiling; Mao, Mingming; Xun, Meng; Chen, Maoxing; Zheng, Lei [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China)] [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Xie, Yiyang [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China)] [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China); Sun, Jie, E-mail: jie.sun@chalmers.se [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China) [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Mikroteknologi och Nanovetenskap, Chalmers Tekniska Högskola AB, Göteborg 41296 (Sweden)

2013-11-25T23:59:59.000Z

143

Potential Environmental Impacts from the Metals in Incandescent, Compact Fluorescent Lamp (CFL), and Light-Emitting Diode (LED) Bulbs  

Science Journals Connector (OSTI)

Artificial lighting systems are transitioning from incandescent to compact fluorescent lamp (CFL) and light-emitting diode (LED) bulbs in response to the U.S. Energy Independence and Security Act and the EU Ecodesign Directive, which leads to energy savings and reduced greenhouse gas emissions. ... The CFLs and LEDs have higher resource depletion and toxicity potentials than the incandescent bulb due primarily to their high aluminum, copper, gold, lead, silver, and zinc. ... mercury pollution; redn. in electricity demand from the substitution of incandescent bulbs with fluorescents leads to reduced mercury emissions during the use of the bulb. ...

Seong-Rin Lim; Daniel Kang; Oladele A. Ogunseitan; Julie M. Schoenung

2012-12-13T23:59:59.000Z

144

Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes  

SciTech Connect

We report the growth of GaN micro-rods and coaxial quantum-well heterostructures on graphene films, together with structural and optical characterization, for applications in flexible optical devices. Graphene films were grown on Cu foil by means of chemical vapor deposition, and used as the substrates for the growth of the GaN micro-rods, which were subsequently transferred onto SiO{sub 2}/Si substrates. Highly Si-doped, n-type GaN micro-rods were grown on the graphene films using metal–organic chemical vapor deposition. The growth and vertical alignment of the GaN micro-rods, which is a critical factor for the fabrication of high-performance light-emitting diodes (LEDs), were characterized using electron microscopy and X-ray diffraction. The GaN micro-rods exhibited promising photoluminescence characteristics for optoelectronic device applications, including room-temperature stimulated emission. To fabricate flexible LEDs, In{sub x}Ga{sub 1–x}N/GaN multiple quantum wells and a p-type GaN layer were deposited coaxially on the GaN micro-rods, and transferred onto Ag-coated polymer substrates using lift-off. Ti/Au and Ni/Au metal layers were formed to provide electrical contacts to the n-type and p-type GaN regions, respectively. The micro-rod LEDs exhibited intense emission of visible light, even after transfer onto the flexible polymer substrate, and reliable operation was achieved following numerous cycles of mechanical deformation.

Chung, Kunook; Beak, Hyeonjun; Tchoe, Youngbin; Oh, Hongseok; Yi, Gyu-Chul, E-mail: gcyi@snu.ac.kr [Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Yoo, Hyobin; Kim, Miyoung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)

2014-09-01T23:59:59.000Z

145

Review Absorbance Based Light Emitting Diode Optical Sensors and Sensing Devices  

E-Print Network (OSTI)

emitting diodes (LEDs) as light sources is one strategy, which has been successfully applied in chemical

Dermot Diamond

146

Local indium segregation and band structure in high efficiencygreen light emitting InGaN/GaN diodes  

SciTech Connect

GaN/InGaN light emitting diodes (LEDs) are commercialized for lighting applications because of the cost efficient way that they produce light of high brightness. Nevertheless, there is significant room for improving their external emission efficiency from typical values below 10 percent to more than 50 percent, which are obtainable by use of other materials systems that, however, do not cover the visible spectrum. In particular, green-light emitting diodes fall short in this respect, which is troublesome since the human eye is most sensitive in this spectral range. In this letter advanced electron microscopy is used to characterize indium segregation in InGaN quantum wells of high-brightness, green LEDs (with external quantum efficiency as high as 15 percent at 75 A/cm2). Our investigations reveal the presence of 1-3 nm wide indium rich clusters in these devices with indium concentrations as large as 0.30-0.40 that narrow the band gap locally to energies as small as 2.65 eV.

Jinschek, Joerg R.; Erni, Rolf; Gardner, Nathan F.; Kim, AndrewY.; Kisielowski, Christian

2004-11-23T23:59:59.000Z

147

Organic light emitting device architecture for reducing the number of organic materials  

DOE Patents (OSTI)

An organic light emitting device is provided. The device includes an anode and a cathode. A first emissive layer is disposed between the anode and the cathode. The first emissive layer includes a first non-emitting organic material, which is an organometallic material present in the first emissive layer in a concentration of at least 50 wt %. The first emissive layer also includes a first emitting organic material. A second emissive layer is disposed between the first emissive layer and the cathode, preferably, in direct contact with the first emissive layer. The second emissive material includes a second non-emitting organic material and a second emitting organic material. The first and second non-emitting materials, and the first and second emitting materials, are all different materials. A first non-emissive layer is disposed between the first emissive layer and the anode, and in direct contact with the first emissive layer. The first non- emissive layer comprises the first non-emissive organic material.

D'Andrade, Brian (Westampton, NJ); Esler, James (Levittown, PA)

2011-10-18T23:59:59.000Z

148

A fluctuational electrodynamics model for the optimization of light-extraction efficiency in thin-film light-emitting diodes  

SciTech Connect

The rapid development of thin film light-emitting diodes (LEDs) has enabled the enhancement of the light extraction beyond geometrical limits but more quantitative understanding of the underlying optical processes is required to fully optimize the extraction. We present first-principle calculations of the light extraction efficiency and optical energy flow in thin-film LEDs. The presented model generalizes the methods of fluctuational electrodynamics to excited semiconductors and simultaneously accounts for wave optical effects, e.g., interference and near-field coupling as well as the internal absorption of the light-emitting material in determining the rate of light emission and internal dissipation in the optical cavity formed by a planar LED. The calculations show that in structures with a metallic mirror, the emissivity of the active region can approach unity at selected wavelengths, even when the nominal emissivity of the active region is only moderate. However, the results also show that near-field coupling of emission from the active region to the mirror can provide a substantial non-radiative loss channel reducing the maximum light extraction efficiency to 0.67 in our example setup. These losses can be partly compensated by the efficient photon recycling enabled by thick active regions that quench emission to confined modes and thereby reduce parasitic absorption.

Heikkilä, Oskari, E-mail: oskari.heikkila@aalto.fi; Oksanen, Jani; Tulkki, Jukka [Department of Biomedical Engineering and Computational Science, Aalto University, Helsinki (Finland)

2013-12-14T23:59:59.000Z

149

Photonic crystal light emitting diode based on Er and Si nanoclusters co-doped slot waveguide  

SciTech Connect

We report on the design, fabrication, and electro-optical characterization of a light emitting device operating at 1.54??m, whose active layer consists of silicon oxide containing Er-doped Si nanoclusters. A photonic crystal (PhC) is fabricated on the top-electrode to enhance the light extraction in the vertical direction, and thus the external efficiency of the device. This occurs if a photonic mode of the PhC slab is resonant with the Er emission energy, as confirmed by theoretical calculations and experimental analyses. We measure an increase of the extraction efficiency by a factor of 3 with a high directionality of light emission in a narrow vertical cone. External quantum efficiency and power efficiency are among the highest reported for this kind of material. These results are important for the realization of CMOS-compatible efficient light emitters at telecom wavelengths.

Lo Savio, R.; Galli, M.; Liscidini, M.; Andreani, L. C. [Dipartimento di Fisica, Università di Pavia, Via Bassi 6, 27100 Pavia (Italy); Franzò, G.; Iacona, F.; Miritello, M. [MATIS-IMM CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Irrera, A. [CNR-IPCF, Viale Ferdinando Stagno d'Alcontres 37, 98158 Messina (Italy); Sanfilippo, D.; Piana, A. [ST Microelectronics, Stradale Primosole 50, 95121 Catania (Italy); Priolo, F. [MATIS-IMM CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania (Italy); Scuola Superiore di Catania, Università di Catania, Via Valdisavoia 9, 95123 Catania (Italy)

2014-03-24T23:59:59.000Z

150

Ultraviolet emission from a multi-layer graphene/MgZnO/ZnO light-emitting diode  

SciTech Connect

We report on ultraviolet emission from a multi-layer graphene (MLG)/MgZnO/ZnO light-emitting diodes (LED). The p-type MLG and MgZnO in the MLG/MgZnO/ZnO LED are used as transparent hole injection and electron blocking layers, respectively. The current-voltage characteristics of the MLG/MgZnO/ZnO LED show that current transport is dominated by tunneling processes in the MgZnO barrier layer under forward bias conditions. The holes injected from p-type MLG recombine efficiently with the electrons accumulated in ZnO, and the MLG/MgZnO/ZnO LED shows strong ultraviolet emission from the band edge of ZnO and weak red-orange emission from the deep levels of ZnO.

Kang, Jang-Won; Choi, Yong-Seok; Goo Kang, Chang; Hun Lee, Byoung [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Kim, Byeong-Hyeok [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States); Park, Seong-Ju, E-mail: sjpark@gist.ac.kr [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

2014-02-03T23:59:59.000Z

151

Phosphor-free nanopyramid white light-emitting diodes grown on (101{sup ¯}1) planes using nanospherical-lens photolithography  

SciTech Connect

We reported a high-efficiency and low-cost nano-pattern method, the nanospherical-lens photolithography technique, to fabricate a SiO{sub 2} mask for selective area growth. By controlling the selective growth, we got a highly ordered hexagonal nanopyramid light emitting diodes with InGaN/GaN quantum wells grown on nanofacets, demonstrating an electrically driven phosphor-free white light emission. We found that both the quantum well width and indium incorporation increased linearly along the (101{sup ¯}1) planes towards the substrate and the perpendicular direction to the (101{sup ¯}1) planes as well. Such spatial distribution was responsible for the broadband emission. Moreover, using cathodoluminescence techniques, it was found that the blue emission originated from nanopyramid top, resembling the quantum dots, green emission from the InGaN quantum wells layer at the middle of sidewalls, and yellow emission mainly from the bottom of nanopyramid ridges, similar to the quantum wires.

Wu, Kui [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China) [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084 (China); Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wei, Xuecheng; Zheng, Haiyang; Chen, Yu; Lu, Hongxi; Wang, Junxi; Li, Jinmin [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)] [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Lan, Ding [National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100080 (China)] [National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100080 (China); Huang, Kai [Platform of Characterization and Test, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215000 (China)] [Platform of Characterization and Test, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215000 (China); Luo, Yi [Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084 (China)] [Department of Electronic Engineering, Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Tsinghua University, Beijing 100084 (China)

2013-12-09T23:59:59.000Z

152

Functional Polymer Architectures for Solution Processed Organic Light Emitting Diodes  

E-Print Network (OSTI)

through formation of the tetrazole from 4-bromobenzonitrile13 5-(4-Bromophenyl)tetrazole, 7 2-(4-tert- Butylphenyl)-5-(

Poulsen, Daniel Andrew

2010-01-01T23:59:59.000Z

153

Organic Light Emitting Diode for White Light Emission  

E-Print Network (OSTI)

During the last few years, research based on energy saving technologies is being given high priority all over the world. General lighting is one area in which large quantity of electrical energy is being spend and substantial energy saving is possible by using energy saving technologies. Conventional light sources like incandescent filament lamps in which a major

M. N. Kamalasanan; Ritu Srivastava; Gayatri Chauhan; An Kumar; Amit Kumar; M. N. Kamalasanan; Ritu Srivastava; Gayatri Chauhan; An Kumar; Priyanka Tayagi; Amit Kumar

154

Enhanced Light Extraction from Organic Light Emitting Diodes...  

NLE Websites -- All DOE Office Websites (Extended Search)

Solar Photovoltaic Solar Photovoltaic Industrial Technologies Industrial Technologies Advanced Materials Advanced Materials Find More Like This Return to Search Enhanced Light...

155

Functional Polymer Architectures for Solution Processed Organic Light Emitting Diodes  

E-Print Network (OSTI)

for high energy blue phosphorescent materials. Therefore,this high triplet energy block copolymer as host material, afind materials with sufficiently high triplet energy to be

Poulsen, Daniel Andrew

2010-01-01T23:59:59.000Z

156

Effects of internal fields on deep-level emission in InGaN/GaN quantum-well light-emitting diodes  

Science Journals Connector (OSTI)

We report on the important role played by internal quantum well (QW) fields in the anomalous inversion of capacitance transients in InGaN/GaN multi-QW light-emitting diodes (LEDs). This effect was observed by deep-level transient spectroscopy (DLTS) ... Keywords: Deep level, III-Nitride, Internal fields, Quantum well

L. Rigutti; A. Castaldini; A. Cavallini

2009-02-01T23:59:59.000Z

157

Light output enhancement of InGaN/GaN light-emitting diodes with contrasting indium tin-oxide nanopatterned structures  

Science Journals Connector (OSTI)

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square ...

Sang Hyun Jung; Keun Man Song; Young Su Choi; Hyeong-Ho Park; Hyun-Beom Shin; Ho Kwan Kang; Jaejin Lee

2013-01-01T23:59:59.000Z

158

Amber-green light-emitting diodes using order-disorder Al[subscript x]In[subscript 1?x]P heterostructures  

E-Print Network (OSTI)

We demonstrate amber-green emission from Al[subscript x]In[subscript 1– x]P light-emitting diodes (LEDs) with luminescence peaked at 566?nm and 600?nm. The LEDs are metamorphically grown on GaAs substrates via a graded ...

Christian, Theresa M.

159

General method to solution-process multilayer polymer light-emitting diodes  

E-Print Network (OSTI)

-emitting diodes. This method can be applied to arbitrary combinations of polymers with no restriction on solvents. One green- and two blue-emitting polymers are chosen as the emissive layers. The electron-hole balance But these methods are only restricted to spe- cific polymers combined with specific solvents. Until now

160

138 JOURNAL OF DISPLAY TECHNOLOGY, VOL. 2, NO. 2, JUNE 2006 Improving the Performance of Organic Light-Emitting  

E-Print Network (OSTI)

­LiF­Al is believed to be due to the enhancement of elec- tron injection by thermal treatment. Secondary ion mass spec Light-Emitting Diodes Containing BCP/LiF/Al by Thermal Annealing J. X. Sun, Student Member, IEEE, X. L. However, other devices consisting of Alq3 LiF/Al were less affected. It is believed that the thermal

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161

The Electric and Optical Properties of Doped Small Molecular Organic Light-Emitting Devices  

SciTech Connect

Organic light-emitting devices (OLEDs) constitute a new and exciting emissive display technology. In general, the basic OLED structure consists of a stack of fluorescent organic layers sandwiched between a transparent conducting-anode and metallic cathode. When an appropriate bias is applied to the device, holes are injected from the anode and electrons from the cathode; some of the recombination events between the holes and electrons result in electroluminescence (EL). Until now, most of the efforts in developing OLEDs have focused on display applications, hence on devices within the visible range. However some organic devices have been developed for ultraviolet or infrared emission. Various aspects of the device physics of doped small molecular OLEDs were described and discussed. The doping layer thickness and concentration were varied systematically to study their effects on device performances, energy transfer, and turn-off dynamics. Low-energy-gap DCM2 guest molecules, in either {alpha}-NPD or DPVBi host layers, are optically efficient fluorophores but also generate deep carrier trap-sites. Since their traps reduce the carrier mobility, the current density decreases with increased doping concentration. At the same time, due to efficient energy transfer, the quantum efficiency of the devices is improved by light doping or thin doping thickness, in comparison with the undoped neat devices. However, heavy doping induces concentration quenching effects. Thus, the doping concentration and doping thickness may be optimized for best performance.

Kwang-Ohk Cheon

2003-08-05T23:59:59.000Z

162

Bilirubin phototransformation in vitro using a battery-powered, solar-charged, high-intensity blue light-emitting diode phototherapy blanket  

Science Journals Connector (OSTI)

The availability of new, higher intensity Blue Light-Emitting Diodes (LEDs), as used in the development of our LED phototherapy blanket, led us to hypothesise that our blue LED phototherapy system would phototransform bilirubin more rapidly, in vitro, than the current commercially available, state-of-the-art phototherapy system. Furthermore, we theorised that increasing light intensity, beyond levels previously studied, would lead to increasing rates of bilirubin phototransformation.

Harel Rosen; Jerome J. Hric; Arye Rosen; Danielle Rosen; Shalom Komornik; Kathy Zaleski; Susan Yaron

2014-01-01T23:59:59.000Z

163

Efficiency peaks in the transient electroluminescence of multilayer organic light-emitting devices  

SciTech Connect

It is shown that when multilayer organic light-emitting devices (OLEDs) containing hole (h{sup +}) and electron (e{sup -}) transporting layers (HTLs and ETLs, respectively) are biased with microsecond to millisecond voltage pulses higher than a threshold value V{sub th}, the electroluminescence (EL) intensity increases dramatically to a peak value which then relaxes to the lower dc value; the relaxation time decreases strongly with increasing pulse amplitude. Since the current waveforms are essentially rectangular, the transient EL is proportional to the external quantum efficiency {eta}. The value of V{sub th} coincides with the bias for maximum dc efficiency typically observed when {eta} is monitored vs V. This relation and the apparent absence of the transient peak in single-layer OLEDs suggest that it is due either to internal field redistribution processes in the ETL and HTL or to space charges, e.g., trapped polarons which accumulate at the HTL/ETL interface, and quench the emitting singlet excitons. It is concluded that highly efficient OLED operation may be achieved at high brightness by pulsed bias at an optimized duty cycle. (c) 2000 American Institute of Physics.

Savvate'ev, V. [Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011-3020 (United States)] [Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011-3020 (United States); Friedl, J. [Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011-3020 (United States)] [Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011-3020 (United States); Zou, L. [Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011-3020 (United States)] [Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011-3020 (United States); Oldham, W. J. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Shinar, J. [Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011-3020 (United States)] [Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011-3020 (United States)

2000-04-17T23:59:59.000Z

164

Phosphine Oxide Based Electron Transporting and Hole Blocking Materials for Blue Electrophosphorescent Organic Light Emitting Devices  

SciTech Connect

We report the design, synthesis, thermal, and photophysical properties of two phosphine oxide based electron transport/hole blocking materials, 2,6-bis(4-(diphenylphosphoryl)phenyl)pyridine (BM-A11) and 2,4-bis(4-(diphenyl-phosphoryl)phenyl)pyridine (BM-A10) for blue electrophosphorescent organic light emitting devices (OLEDs). The use of these materials in blue OLED with iridium (III) bis[(4,6-difluorophenyl)-pyridinato-N,C2’]picolinate (Firpic) as the phosphor was demonstrated. Using the dual host device architecture with BM-A10 as the ETM yields a maximum EQE of 8.9% with a power efficiency of 21.5 lm/W (4.0V and 35 cd/m2). When BM-A11 is used as the ETM, the maximum EQE and power efficiency improves to 14.9% and 48.4 lm/W, respectively (3.0V and 40 cd/m2).

Von Ruden, Amber L.; Cosimbescu, Lelia; Polikarpov, Evgueni; Koech, Phillip K.; Swensen, James S.; Wang, Liang; Darsell, Jens T.; Padmaperuma, Asanga B.

2010-10-26T23:59:59.000Z

165

Quantum-dot light-emitting diodes utilizing CdSe/ZnS nanocrystals embedded in TiO{sub 2} thin film  

SciTech Connect

Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe/ZnS nanocrystals in TiO{sub 2} thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO{sub 2}/QDs/p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO{sub 2}/QDs/Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

Kang, Seung-Hee; Kumar, Ch. Kiran; Kim, Eui-Tae [Department of Materials Science and Engineering, Chungnam National University, Daeduk Science Town, Daejeon 305-764 (Korea, Republic of); Lee, Zonghoon [National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, MS 72-150, Berkeley, California 94720 (United States); Kim, Kyung-Hyun; Huh, Chul [Electronics and Telecommunications Research Institute, Daeduk Science Town, Daejeon 305-350 (Korea, Republic of)

2008-11-10T23:59:59.000Z

166

Self assembly of CdSe/ZnS quantum dots for organic/inorganic light emitting devices for the next generation display technology  

Science Journals Connector (OSTI)

We have investigated the effect of quantum dot (QD) concentrations, spin speed and temperature on the self assembly of CdSe/ZnS QDs on substrate for the optimisation of QDs used in organic light-emitting devices (OLEDs) applications. The atomic force microscopy (AFM) results showed that surface morphology and coverage are varied with different process parameters. There is also a tendency for the formation of aggregates/islands on a smooth substrate that could be caused by spinodal phase separation. The uniform distribution of QDs with controllable density was achieved using the conventional spin-coating method. We fabricated and investigated the effect of CdSe/ZnS QD concentrations on the self-assembly hybrid organic/inorganic light emitting diodes (QD-OLEDs) for the tuning of performance. There was a QD threshold concentration below which there was no emission from the QDs. The estimated QD concentration was around 9 × 1011 cm?2 for the best performance of QD-OLED. The annealing of QD-OLED increased the QD emission about three times. No wavelength shift was observed in the electroluminescence spectra from the QD before and after the annealing of QD-OLEDs. The mechanism of this emission improvement is discussed.

A. Uddin; C.C. Teo

2009-01-01T23:59:59.000Z

167

Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions  

SciTech Connect

This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.

Piprek, Joachim, E-mail: piprek@nusod.org [NUSOD Institute LLC, P.O. Box 7204, Newark, Delaware 19714 (United States)

2014-02-03T23:59:59.000Z

168

Angular distribution of polarized spontaneous emissions and its effect on light extraction behavior in InGaN-based light emitting diodes  

SciTech Connect

Angular intensity distributions of differently polarized light sources in multiple quantum wells (MQWs) and their effects on extraction behavior of spontaneous emission from light emitting diode (LED) chips have been studied. Theoretical calculation based on k·p approximation, ray tracing simulation and angular electroluminescence measurement were applied in this work. It is found that the electron-hole recombination in the InGaN MQWs produces a spherical distribution of an s-polarized source and a dumbbell-shaped p-polarized source. Light rays from different polarized sources experience different extraction processes, determining the polarization degree of electro-luminescence and extraction efficiency of LEDs.

Yuan, Gangcheng; Chen, Xinjuan; Yu, Tongjun, E-mail: tongjun@pku.edu.cn; Lu, Huimin; Chen, Zhizhong; Kang, Xiangning; Wu, Jiejun; Zhang, Guoyi [State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)

2014-03-07T23:59:59.000Z

169

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures  

SciTech Connect

Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandgaps are necessary for electrical carrier injection. This approach requires the activation of very deep dopants in very wide bandgap semiconductors, which is a difficult task. In this work, an approach is proposed and experimentally demonstrated to counter the challenges. The active region of the heterostructure light emitting diode uses ultrasmall epitaxially grown GaN quantum dots. Remarkably, the optical emission energy from GaN is pushed from 365?nm (3.4?eV, the bulk bandgap) to below 240?nm (>5.2?eV) because of extreme quantum confinement in the dots. This is possible because of the peculiar bandstructure and band alignments in the GaN/AlN system. This active region design crucially enables two further innovations for efficient carrier injection: Tunnel injection of carriers and polarization-induced p-type doping. The combination of these three advances results in major boosts in electroluminescence in deep-ultraviolet light emitting diodes and lays the groundwork for electrically pumped short-wavelength lasers.

Verma, Jai, E-mail: jverma@nd.edu; Islam, S. M.; Protasenko, Vladimir; Kumar Kandaswamy, Prem; Xing, Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2014-01-13T23:59:59.000Z

170

Layering Mismatched Lattices Creates Long-Sought-After Green Light-Emitting Diode (Fact Sheet), NREL Highlights, Science, NREL (National Renewable Energy Laboratory)  

NLE Websites -- All DOE Office Websites (Extended Search)

Scientists at the National Renewable Energy Laboratory (NREL) Scientists at the National Renewable Energy Laboratory (NREL) invent a deep green LED that can lead to higher-efficiency white light, lower electric bills. The white light light-emitting diode (LED) that promises to revolutionize indoor lighting while dramatically lowering electricity costs had been confounded by the so-called "green gap:" the inability to develop light in the green spectrum that can be combined with red and blue to produce white light. NREL researchers conceptualized a green emission by taking a different look at how the laboratory's solar cell researchers had set a world efficiency record and by changing a key process that had created a red LED. A good green color of light is between 530 and 570 nanometers (nm) on the Color

171

An ambipolar phosphine oxide-based host for high power efficiency blue phosphorescent organic light emitting devices  

SciTech Connect

We report blue electrophosphorescent organic light emitting devices (OLEDs) with a new ambipolar host material, 4-(diphenylphosphoryl)-N,N-diphenylaniline (HM-A1), doped with the blue phosphor iridium (III) bis[(4,6-difluorophenyl)-pyridinato-N,C2’]picolinate (FIrpic). The ambipolar nature of the host was verified using single carrier devices. The power efficiency of devices that employed 2,8-bis(diphenylphosphoryl)dibenzothiophene (PO15) as the electron transport layer showed optimized device performance when the electron transport layer thickness was 500 Å, giving a peak power efficiency of 46 lm/W (corresponding external quantum efficiency of 17.1%). The external quantum efficiency and power efficiency at the brightness of 800 Cd/m2 were measured with no light outcoupling enhancement and found to be 15.4% and 26 lm/W, respectively.

Polikarpov, Evgueni; Swensen, James S.; Chopra, Neetu; So, Franky; Padmaperuma, Asanga B.

2009-06-01T23:59:59.000Z

172

Zigzag and helical AlN layer prepared by glancing angle deposition and its application as a buffer layer in a GaN-based light-emitting diode  

Science Journals Connector (OSTI)

This study investigates an aluminum nitride (AlN) nanorod structure sputtered by glancing angle deposition (GLAD) and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The ray tracing ...

Lung-Chien Chen; Ching-Ho Tien; Liu Xuguang; Xu Bingshe

2012-01-01T23:59:59.000Z

173

Efficient light emitting devices utilizing CdSe(ZnS) quantum dots in organic host matrices  

E-Print Network (OSTI)

We demonstrate efficient electroluminescence from thin film structures containing core-shell CdSe(ZnS) quantum dots dispersed in molecular organic host materials. In the most efficient devices, excitons are created on the ...

Coe-Sullivan, Seth (Seth Alexander)

2002-01-01T23:59:59.000Z

174

Measurement and control of exciton spin in organic light emitting devices  

E-Print Network (OSTI)

Organic semiconductors are a promising new material set for electronic and optoelectronic devices. Their properties can be precisely controlled through chemistry, and they are well-suited for large-area, flexible, and ...

Segal, Michael, Ph. D. Massachusetts Institute of Technology

2007-01-01T23:59:59.000Z

175

Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes  

SciTech Connect

Large-scale Ag nanodisks (NDs) arrays fabricated using nanospherical-lens lithography (NLL) are embedded in p-GaN layer of an InGaN/GaN light-emitting diode (LED) for generating localized surface plasmon (LSP) coupling with the radiating dipoles in the quantum-well (QWs). Based on the Ag NDs with the controlled surface coverage, LSP leads to the improved crystalline quality of regrowth p-GaN, increased photoluminescence (PL) intensity, reduced PL decay time, and enhanced output power of LED. Compared with the LED without Ag NDs, the optical output power at a current of 350 mA of the LSP-enhanced LEDs with Ag NDs having a distance of 20 and 35 nm to QWs is increased by 26.7% and 31.1%, respectively. The electrical characteristics and optical properties of LEDs with embedded Ag NPs are dependent on the distance of between Ag NPs and QWs region. The LED with Ag NDs array structure is also found to exhibit reduced emission divergence, compared to that without Ag NDs.

Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wu, Kui; Sun, Bo; Zhang, Yonghui; Chen, Yu; Huo, Ziqiang; Hu, Qiang; Wang, Junxi; Zeng, Yiping; Li, Jinmin [State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 (China); Lan, Ding [National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100080 (China)

2014-06-15T23:59:59.000Z

176

Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography  

SciTech Connect

The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350?mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2014-07-07T23:59:59.000Z

177

Structurally Integrated Photoluminescence-Based Lactate Sensor Using Organic Light Emitting Devices (OLEDs) as the Light Source  

SciTech Connect

Multianalyte bio(chemical) sensors are extensively researched for monitoring analytes in complex systems, such as blood serum. As a step towards developing such multianalyte sensors, we studied a novel, structurally integrated, organic light emitting device (OLED)-based sensing platform for detection of lactate. Lactate biosensors have attracted numerous research efforts, due to their wide applications in clinical diagnosis, athletic training and food industry. The OLED-based sensor is based on monitoring the oxidation reaction of lactate, which is catalyzed by the lactate oxidase (LOX) enzyme. The sensing component is based on an oxygen-sensitive dye, Platinum octaethyl porphyrin (PtOEP), whose photoluminescence (PL) lifetime {tau} decreases as the oxygen level increases. The PtOEP dye was embedded in a thin film polystyrene (PS) matrix; the LOX was dissolved in solution or immobilized in a sol-gel matrix. {tau} was measured as a function of the lactate concentration; as the lactate concentration increases, {tau} increases due to increased oxygen consumption. The sensors performance is discussed in terms of the detection sensitivity, dynamic range, and response time. A response time of {approx}32 sec was achieved when the LOX was dissolved in solution and kept in a closed cell. Steps towards development of a multianalyte sensor array using an array of individually addressable OLED pixels were also presented.

Chengliang Qian

2006-08-09T23:59:59.000Z

178

High performance flexible top-emitting warm-white organic light-emitting devices and chromaticity shift mechanism  

SciTech Connect

Flexible warm-white top-emitting organic light-emitting devices (TEOLEDs) are fabricated onto PET substrates with a simple semi-transparent cathode Sm/Ag and two-color phosphors respectively doped into a single host material TCTA. By adjusting the relative position of the orange-red EML sandwiched between the blue emitting layers, the optimized device exhibits the highest power/current efficiency of 8.07 lm/W and near 13 cd/A, with a correlated color temperature (CCT) of 4105 K and a color rendering index (CRI) of 70. In addition, a moderate chromaticity variation of (-0.025, +0.008) around warm white illumination coordinates (0.45, 0.44) is obtained over a large luminance range of 1000 to 10000 cd/m{sup 2}. The emission mechanism is discussed via delta-doping method and single-carrier device, which is summarized that the carrier trapping, the exciton quenching, the mobility change and the recombination zone alteration are negative to color stability while the energy transfer process and the blue/red/blue sandwiched structure are contributed to the color stability in our flexible white TEOLEDs.

Shi, Hongying; Deng, Lingling; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn; Xu, Ying; Zhao, Xiaofei; Cheng, Fan [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China)] [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Huang, Wei, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China) [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Technology, Nanjing 211816 (China)

2014-04-15T23:59:59.000Z

179

Voltage-induced electroluminescence characteristics of hybrid light-emitting diodes with CdSe/Cd/ZnS core-shell nanoparticles embedded in a conducting polymer on plastic substrates  

SciTech Connect

We investigate the electroluminescence (EL) characteristics of a hybrid light-emitting diode (HyLED) with an emissive layer comprised of CdSe/Cd/ZnS core-shell nanoparticles (NPs) embedded in poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) on a plastic substrate. The EL characteristics change dramatically with increasing of the biased voltage. At low voltages, recombination of electrons and holes occurs only in the PFO film because of poor charge transfer in the PFO-CdSe/Cd/ZnS NPs composite film, while the color of the light-emitting from the HyLED changes from blue to red as the biased voltage increases from 7.5 to 17.5?V. We examine and discuss the mechanism of this color tunability.

Kwak, Kiyeol; Cho, Kyoungah, E-mail: chochem@korea.ac.kr, E-mail: sangsig@korea.ac.kr; Kim, Sangsig, E-mail: chochem@korea.ac.kr, E-mail: sangsig@korea.ac.kr [Department of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)] [Department of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

2014-03-10T23:59:59.000Z

180

Enhancing the performance of organic light emitting diodes by using nanostructured composite films  

Science Journals Connector (OSTI)

Recent achievements on the use of nanocomposites such as nanostructured composites with a structure of nanoparticles embedded in polymers (NIP) and nanocomposites with a structure of polymers deposited on nanoporous thin films (PON) for OLEDs are presented in this report. The influence of nanooxides on the photoelectric properties of the NIPs is explained with regard to the fact that TiO2 particles usually form a type-II heterojunction with a polymer matrix, which essentially results in the separation of non-equilibrium electrons and holes. MEH-PPV luminescence quenching is strongly dependent on the nature of nanostructural particles embedded in polymer matrix. Actually, the higher quenching of the polymer fluorescence observed in the presence of titania nanoparticles proves that the transfer of the photogenerated electrons to the TiO2 is more efficient for rods. Characterisation of the nanocomposite films showed that both the current-voltage characteristics and the photoluminescent properties of the NIP nanocomposite materials were significantly enhanced in comparison with the standard polymers. OLEDs made from these layers demonstrate high photonic efficiency. For a PON-like hybrid layer of MEH-PPV/nc-TiO2, the photoluminescence enhancement was observed when the MEHPPV-PON films were excited by a 325 nm wavelength laser, and the excitation of a 470 nm wavelength light resulted in the strong polymer fluorescence quenching. Current-voltage characteristics of laminar layer devices with a structure of Ti/PON/Al-Ag in comparison with that of Ti/MEH-PPV/Al-Ag showed that the turn-on voltage of the devices was lowered considerably. Therefore, PONs are suitable for use in a reverse OLED, where the light goes out through a transparent or semi-transparent cathode; moreover, it is much easier to make ohmic contact to the metallic Ti electrode.

Nguyen Nang Dinh; Le Ha Chi; Tran Quang Trung

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Modelling and simulation of electronic relaxation processes in phosphorescent molecules in organic light emitting diodes  

Science Journals Connector (OSTI)

Simulation is made for the temperature dependences of emission intensity of phosphorescent tris(2-phenylpyridine) iridium [Ir ppy)3] molecules doped in fluorescent N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine (TPD) molecules from numerical calculation and compared them with the experimental result. Rate equations are constructed for the three zero-field splitting substates in the spin-triplet state T1 of the Ir(ppy)3 guest and for the TT1 state of the TPD host. It is concluded that (1) the increase of emission intensity above 100 K is due to the endothermic energy transfer from host to guest and (2) the decrease of PL intensity observed above 200 K is due to the energy transfer from the excited host to the neighbouring unexcited host. Calculation is extended to the case of Ir(ppy)3 doped in aluminium tris 8-hydroxyquinoline (Alq3) where the T1 state of Alq3 lies at much deeper energy than the case of TPD host.

Nadeer Aljaroudi; Taiju Tsuboi

2006-01-01T23:59:59.000Z

182

Improvement of output coupling efficiency of organic light-emitting diodes by backside substrate modification  

E-Print Network (OSTI)

modification C. F. Madigan, M.-H. Lu, and J. C. Sturma) Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 Received 8 November and at least triple it when high-index plastic substrates are used. The work is accompa- nied by modeling

183

Colloidal Quantum Dot Light-Emitting Diodes Employing Phosphorescent Small Organic Molecules as Efficient Exciton  

E-Print Network (OSTI)

engineer, the potential energy transfer pumping scheme. Only Zhang et al. reported an enhancement enhancement factor in the external quantum efficiency over the conventional QLED structure, in which energy as Efficient Exciton Harvesters Evren Mutlugun,,,§, Burak Guzelturk,,§, Agus Putu Abiyasa,§, Yuan Gao,§ Xiao

Demir, Hilmi Volkan

184

Structurally Integrated Photoluminescent Chemical and Biological Sensors: An Organic Light-Emitting Diode-Based Platform  

Science Journals Connector (OSTI)

The chapter describes the development, advantages, challenges, and potential of an emerging, compact photoluminescence-based sensing platform for chemical and biological analytes, including multiple analytes. In ...

J. Shinar; R. Shinar

2008-01-01T23:59:59.000Z

185

Far-field radiation of photonic crystal organic light-emitting diode  

Science Journals Connector (OSTI)

Utilizing the near- to far-field transformation based on the 3-D finite difference time domain (FDTD) method and Fourier transformation, the far-field profile of a photonic crystal...

Lee, Yong-Jae; Kim, Se-Heon; Kim, Guk-Hyun; Lee, Yong-Hee; Cho, Sang-Hwan; Song, Young-Woo; Kim, Yoon-Chang; Do, Young Rag

2005-01-01T23:59:59.000Z

186

Efficient organic light-emitting diodes using polycrystalline silicon thin films as semitransparent anode  

E-Print Network (OSTI)

anode X. L. Zhu, J. X. Sun, H. J. Peng, Z. G. Meng, M. Wong, and H. S. Kwok Center for Display Research. In this letter, we propose and demonstrate the application of boron-doped p-Si as a semi-transparent anode better performance to conventional OLEDs which use ITO as anodes. The present technique has the advantage

187

White organic light-emitting diodes with an ultra-thin premixed emitting layer  

E-Print Network (OSTI)

and even competitors of well-established fluorescent tubes and inorganic LEDs thanks to their unique to outperform incandescent light bulbs and even fluorescent tubes in terms of luminous efficiencies[4]. A good triphenylamine molecule. ABSTRACT: We described an approach to achieve fine color control of fluorescent White

Paris-Sud XI, Université de

188

Fabrication of color tunable organic light-emitting diodes by an alignment free mask patterning method  

E-Print Network (OSTI)

that of the incandescent bulb and comparable with that of the fluorescent tube. OLEDs are a true sur- face/area lighting as that of a point source like LEDs. OLEDs are mercury free thus environmentally friendly. More impor- tantly, OLEDs electrochemical doping to make the two color polymer LEDs, in which two colors can be obtained by changing

189

Electrical and Optical Enhancement in Internally Nanopatterned Organic Light-Emitting Diodes  

E-Print Network (OSTI)

Kao, K.C. , Hwang, W. Electrical Transport in Solids: withPress, 2009. Stallinga, P. Electrical Characterization offrom electrical model . 100

Fina, Michael Dane

2012-01-01T23:59:59.000Z

190

Electrical and Optical Enhancement in Internally Nanopatterned Organic Light-Emitting Diodes  

E-Print Network (OSTI)

incandescent bulbs and fluorescent bulbs). Solid-stateindex (CRI) than fluorescent bulbs. Common examples where

Fina, Michael Dane

2012-01-01T23:59:59.000Z

191

Low-voltage polariton electroluminescence from an ultrastrongly coupled organic light-emitting diode  

SciTech Connect

We demonstrate electroluminescence from Frenkel molecular excitons ultrastrongly coupled to photons of a metal-clad microcavity containing a 2,7-bis[9,9-di(4-methylphenyl)-fluoren-2-yl]-9,9-di(4-methylphenyl)fluorene emissive layer. Thin layers of molybdenum oxide and 4,7-diphenyl-1,10-phenanthroline are used as hole and electron injection layers, respectively. The fabricated devices exhibit an electroluminescence threshold of 3.1?V, a value that is below the bare exciton energy. This result is found to be independent of detuning and consistent with a two-step process for polariton formation. Moreover, we investigate the quantum efficiency of carrier to polariton to photon conversion and obtain an external quantum efficiency of 0.1% for the fabricated structures, an improvement of 5 orders of magnitude over previous reports.

Gubbin, Christopher R.; Maier, Stefan A. [Experimental Solid State Group, Blackett Laboratory, Imperial College London, London SW7 2AZ (United Kingdom); Kéna-Cohen, Stéphane, E-mail: s.kena-cohen@polymtl.ca [Department of Engineering Physics, École Polytechnique de Montréal, Montréal, Quebec H3C 3A7 (Canada)

2014-06-09T23:59:59.000Z

192

Demonstration Assessment of Light Emitting Diode (LED) Residential Downlights and Undercabinet Lights in the Lane County Tour of Homes, Eugene, Oregon  

SciTech Connect

In August 2008 the Pacific Northwest National Laboratory (PNNL) conducted a light emitting diode (LED) residential lighting demonstration project for the U.S. Department of Energy (DOE), Office of Building Technologies, as part of DOE’s Solid State Lighting (SSL) Technology Demonstration Gateway Program. Two lighting technologies, an LED replacement for downlight lamps (bulbs) and an LED undercabinet lighting fixture, were tested in the demonstration which was conducted in two homes built for the 2008 Tour of Homes in Eugene, Oregon. The homes were built by the Lane County Home Builders Association (HBA), and Future B Homes. The Energy Trust of Oregon (ETO) also participated in the demonstration project. The LED downlight product, the LR6, made by Cree LED Lighting Solutions acts as a screw-in replacement for incandescent and halogen bulbs in recessed can downlights. The second product tested is Phillips/Color Kinetics’ eW® Profile Powercore undercabinet fixture designed to mount under kitchen cabinets to illuminate the countertop and backsplash surfaces. Quantitative and qualitative measurements of light performance and electrical power usage were taken at each site before and after initially installed halogen and incandescent lamps were replaced with the LED products. Energy savings and simple paybacks were also calculated and builders who toured the homes were surveyed for their responses to the LED products. The LED downlight product drew 12 Watts of power, cutting energy use by 82% compared to the 65W incandescent lamp and by 84% compared to the 75W halogen lamp. The LED undercabinet fixture drew 10 watts, cutting energy use by 83% to 90% compared to the halogen product, which was tested at two power settings: a low power 60W setting and a high power 105W setting. The LED downlight consistently provided more light than the halogen and incandescent lamps in horizontal measurements at counter height and floor level. It also outperformed in vertical illuminance measurements taken on the walls, indicating better lateral dispersion of the light. The undercabinet fixture’s light output was midway between the low and high power halogen undercabinet fixture light outputs (35.8 foot candle versus 13.4 fc and 53.4 fc) but it produced a more uniform light (max/min ratio of 7.0 versus 10.8). The color correlated temperature (CCT, the blue or yellowness) of the LED light correlated well with the halogen and incandescent lights (2675 K vs 2700 K). The color rendering of the LED downlight also correlated well at 92 CRI compared to 100 CRI for the halogen and incandescent lamps. The LED undercabinet fixture had measures of 2880 K CCT and 71 CRI compared to the 2700 K and 100 CRI scores for the halogen undercabinet fixture. Builders who toured the homes were surveyed; they gave the LED downlight high marks for brightness, said the undercabinet improved shadows and glare and said both products improved overall visibility, home appearance, and home value. Paybacks on the LED downlight ranged from 7.6 years (assuming electricity cost of 11 c/kWh) to 13.5 years (at 5C/kWh). Paybacks on the LED undercabinet fixture in a new home ranged from 4.4 years (11c/kWh electricity) to 7.6 years (5c/kWh) based on product costs of $95 per LED downlight and $140 per LED undercabinet fixture at 3 hrs per day of usage for the downlight and 2 hrs per day for the undercabinet lighting.

Ton, My K.; Richman, Eric E.; Gilbride, Theresa L.

2008-11-10T23:59:59.000Z

193

Optical remote monitoring of CH/sub 4/ gas using low-loss optical fiber link and InGaAsP light-emitting diode in 1. 33-. mu. m region  

SciTech Connect

Purely optical remote monitoring of low-level CH/sub 4/ gas is realized for the first time by the method employing a 2-km long-distance, low-loss silica optical fiber link and a compact absorption cell in conjunction with a high radiant InGaAsP light-emitting diode (LED) at 1.33 ..mu..m. Based on the present experiment, the detection limit of CH/sub 4/ in air was confirmed to be approximately 2000 ppm, i.e., 4% of the lower explosion limit of CH/sub 4/. This result supports the conclusion that the fully optical remote sensing system incorporating ultralow loss optical fiber networks and near infrared LEDs or laser diodes can be extensively used for the detection and surveillance of various inflammable and/or explosive gases in industrial and mining complexes as well as in residential areas.

Chan, K.; Ito, H.; Inaba, H.

1983-10-01T23:59:59.000Z

194

Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study  

SciTech Connect

Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs.

Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Peng, Yingquan, E-mail: yqpeng@lzu.edu.cn [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

2013-12-28T23:59:59.000Z

195

Electronic and excitonic processes in light-emitting devices based on organic materials and colloidal quantum dots  

E-Print Network (OSTI)

technologies requiring high spec- tral quality lighting. Solubility of colloidal QDs in organic solvents- lished green, red, and orange QD-LEDs exhibit peak effi- ciencies in the range of 1%­2%,8,9 while

196

We describe the characteristics and application of a 265nm AlGaN light-emitting diode (LED) operated at 1 MHz repetition rate, 1.2 ns pulse duration, 1.32 W average power, 2.3 mW peak  

E-Print Network (OSTI)

We describe the characteristics and application of a 265nm AlGaN light-emitting diode (LEDnm bandwidth. The LED enables the fluorescence decay of weakly emitting phenylalanine to be measured and resonance energy transfer from phenylalanine to tyrosine and tryptophan, the convenience of the 265nm LED

Strathclyde, University of

197

Organic electronics: from lab to markets  

Science Journals Connector (OSTI)

Organic semiconductors with conjugated electron system are currently intensively investigated for optoelectronic applications. This interest is spurred by novel devices such as organic light-emitting diodes (OLED), organic solar cells, and flexible electronics. ...

K. Leo

2014-03-01T23:59:59.000Z

198

Megahertz organic/polymer diodes  

DOE Patents (OSTI)

Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

Katz, Howard Edan; Sun, Jia; Pal, Nath Bhola

2012-12-11T23:59:59.000Z

199

Fully Printed Separated Carbon Nanotube Thin Film Transistor Circuits and Its Application in Organic Light Emitting Diode Control  

Science Journals Connector (OSTI)

The advantages of printed electronics and semiconducting single-walled carbon nanotubes (SWCNTs) are combined for the first time for display electronics. Conductive silver ink and 98% semiconductive SWCNT solutions are used to print back-gated thin film ...

Pochiang Chen; Yue Fu; Radnoosh Aminirad; Chuan Wang; Jialu Zhang; Kang Wang; Kosmas Galatsis; Chongwu Zhou

2011-11-03T23:59:59.000Z

200

Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods  

SciTech Connect

Light emitting devices include a light emitting diode ("LED") and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some embodiments, the recipient luminophoric medium includes a first broad-spectrum luminescent material and a narrow-spectrum luminescent material. The broad-spectrum luminescent material may down-convert radiation emitted by the LED to radiation having a peak wavelength in the red color range. The narrow-spectrum luminescent material may also down-convert radiation emitted by the LED into the cyan, green or red color range.

LeToquin, Ronan P; Tong, Tao; Glass, Robert C

2014-12-30T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Organic LEDs for optoelectronic neural networks  

E-Print Network (OSTI)

In this thesis, I investigate the characteristics of Organic Light Emitting Diodes (OLEDs) and assess their suitability for use in the Compact Optoelectronic Integrated Neural (COIN) coprocessor. The COIN coprocessor, a ...

Mars, Risha R

2012-01-01T23:59:59.000Z

202

* bulovic@mit.edu; phone 617 253 7012; fax 617 452 5110; rleweb.mit.edu/organic Method for fabrication of saturated RGB quantum dot light emitting  

E-Print Network (OSTI)

color emission in the red, green and blue regions of the spectrum. Keywords: nanocrystal, quantum dot capping groups, surrounding the QD lumophores, facilitate processing in organic solvents

203

Structural Phase Contrast in Polycrystalline Organic Semiconductor  

E-Print Network (OSTI)

electronics", with devices such as light- emitting diodes, lasers, photovoltaic cells, field-effect transis

Peinke, Joachim

204

To be published in IEEE ELECTRON DEVICE LETTERS, January 2008 Reliability of Active-Matrix Organic  

E-Print Network (OSTI)

Hack 5 6 Abstract--We have fabricated active-matrix organic light emit-7 ting diode (AMOLED) test. Hack are with Universal Display Corporation, Ewing, NJ 08618 USA. Color versions of one or more

205

E-Print Network 3.0 - ambipolar organic transistors Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

59 4.2: Design of an Improved Pixel for a Polysilicon Active Matrix Organic Light Emitting Diode Display Summary: 4.2: Design of an Improved Pixel for a Polysilicon Active...

206

Green-Yellow Electroluminescence from a host-dopant blended system as the active layer in a bilayer polymer light emitting diode: Poly(n-vinyl carbazole) as the host and a new soluble thiophene based copolymer [poly(2,2?-BT)-co-(3-DDT)] as the dopant  

Science Journals Connector (OSTI)

Abstract A new type of bilayer Polymer Light Emitting Diode (PLED) which emits green-yellow light is reported. In this PLED, a novel thiophene-based copolymer [poly(2,2?-BT)-co-(3-DDT)] with an excellent electron transporting property has been doped in hole transporting and electron blocking poly(n-vinylcarbazole) (PVK). Formation of type-II heterojunctions among nm-size features in PVK:poly(2,2?-BT)-co-(3-DDT) blended system makes exciplex and electroplex emissions would be dominant in the Electroluminescence (EL) spectrum of the device. These cross recombinations between electrons in the LUMO of poly(2,2?-BT)-co-(3-DDT) and holes in the HOMO of PVK is a reason for the low driving voltage of the PLED because there is no need for the charge carriers to hop or tunnel to the adjacent polymer. Morphological investigations demonstrate that the mixing degree between the components is high, favoring formation of exciplexes and electroplexes at the interface of the components.

Afshin Shahalizad; Sohrab Ahmadi-Kandjani; Hossein Movla; Hafez Omidi; Bakhshali Massoumi; Mohammad Sadegh Zakerhamidi; Ali Akbar Entezami

2014-01-01T23:59:59.000Z

207

Theories of phosphorescence in organo-transition metal complexes - from relativistic effects to simple models and design principles for organic light-emitting diodes  

E-Print Network (OSTI)

We review theories of phosphorescence in cyclometalated complexes. We focus primarily on pseudooctahedrally coordinated $t_{2g}^6$ metals (e.g., [Os(II)(bpy)$_3$]$^{2+}$, Ir(III)(ppy)$_3$ and Ir(III)(ptz)$_3$) as, for reasons that are explored in detail, these show particularly strong phosphorescence. We discuss both first principles approaches and semi-empirical models, e.g., ligand field theory. We show that together these provide a clear understanding of the photophysics and in particular the lowest energy triplet excitation, T$_1$. In order to build a good model relativistic effects need to be included. The role of spin-orbit coupling is well-known, but scalar relativistic effects are also large - and are therefore also introduced and discussed. No expertise in special relativity or relativistic quantum mechanics is assumed and a pedagogical introduction to these subjects is given. It is shown that, once both scalar relativistic effects and spin-orbit coupling are included, time dependent density function...

Powell, B J

2015-01-01T23:59:59.000Z

208

Characterizing Ion Profiles in Dynamic Junction Light-Emitting...  

NLE Websites -- All DOE Office Websites (Extended Search)

advantage in applications such as light-emitting devices, transistors, and electrochromic devices, among others. Evidence suggests that the profiles of ions and...

209

Resonant energy transfer in light harvesting and light emitting applications.  

E-Print Network (OSTI)

??The performance of light emitting and light harvesting devices is improved by utilising resonant energy transfer. In lighting applications, the emission energy of a semiconductor… (more)

Chanyawadee, Soontorn

2009-01-01T23:59:59.000Z

210

Belgirate, Italy, 28-30 September 2005 MECHANISM AND THERMAL EFFECT OF DELAMINATION IN LIGHT-EMITTING  

E-Print Network (OSTI)

for the investigation of the thermal behavior of the delaminated LEDs. Increase of thermal resistance with the degreeBelgirate, Italy, 28-30 September 2005 MECHANISM AND THERMAL EFFECT OF DELAMINATION IN LIGHT-EMITTING DIODE PACKAGES Jianzheng Hu, Lianqiao Yang, and Moo Whan Shin Department of Materials Science

Paris-Sud XI, Université de

211

Mid-ultraviolet Light-Emitting Diode Detects Dipicolinic Acid  

Science Journals Connector (OSTI)

Dipicolinic acid (DPA, 2,6-pyridinedicarboxylic acid) is a substance uniquely present in bacterial spores such as that from anthrax (B. anthracis). It is known that DPA can be...

Li, Qingyang; Dasgupta, Purnendu K; Temkin, Henryk; Crawford, M H; Fischer, A J; Allerman, A A; Bogart, K H A; Lee, S R

2004-01-01T23:59:59.000Z

212

3D Printed Quantum Dot Light-Emitting Diodes  

Science Journals Connector (OSTI)

Developing the ability to 3D print various classes of materials possessing distinct properties could enable the freeform generation of active electronics in unique functional, interwoven architectures. ... Finally, we show that novel architectures that are not easily accessed using standard microfabrication techniques can be constructed, by 3D printing a 2 × 2 × 2 cube of encapsulated LEDs, in which every component of the cube and electronics are 3D printed. ... These include (1) increasing the resolution of the 3D printer such that smaller devices can be printed, (2) improving the performance and yield of the printed devices, and (3) incorporating other classes of nanoscale functional building blocks and devices, including semiconductor, plasmonic, and ferroelectric materials. ...

Yong Lin Kong; Ian A. Tamargo; Hyoungsoo Kim; Blake N. Johnson; Maneesh K. Gupta; Tae-Wook Koh; Huai-An Chin; Daniel A. Steingart; Barry P. Rand; Michael C. McAlpine

2014-10-31T23:59:59.000Z

213

Lensless digital holographic microscope with light-emitting diode illumination  

Science Journals Connector (OSTI)

We demonstrate the operation of a digital in-line microscope with LED illumination. We show with a practical example that, for typical setups, the limited temporal coherence and the...

Repetto, L; Piano, E; Pontiggia, C

2004-01-01T23:59:59.000Z

214

Effect of mechanical vibrations on light emitting diode luminaires.  

E-Print Network (OSTI)

??In this work, a LED and two types of Compact fluorescent lamps were investigated for the intensity variation due to mechanical vibrations in the range… (more)

Paladugu, Jayalakshmi

2009-01-01T23:59:59.000Z

215

Bright Light-Emitting Diodes based on Organometal Halide Perovskite  

E-Print Network (OSTI)

this class of materials to be excellent semiconductors for optoelectronic devices.1-7 Their primary advantages lie in the fact that they can be easily solution processed, require no high temperature heating, and they possess an optical bandgap which...

Tan, Zhi-Kuang; Moghaddam, Reza Saberi; Lai, May Ling; Docampo, Pablo; Higler, Ruben; Deschler, Felix; Price, Michael; Sadhanala, Aditya; Pazos, Luis M.; Credgington, Dan; Hanusch, Fabian; Bein, Thomas; Snaith, Henry J.; Friend, Richard H.

2014-08-03T23:59:59.000Z

216

Zinc Oxide and Nitride Nanowire Based Light Emitting Diodes  

E-Print Network (OSTI)

of incandescent light bulb, fluorescent lamp, and blue lightof incandescent light bulb, fluorescent lamp, and blue lightincandescent bulb and is on the same order as fluorescent

Lai, Elaine Michelle

2009-01-01T23:59:59.000Z

217

LIGHT EMITTING DIODE (LED) TRAFFIC SIGNAL SURVEY RESULTS  

E-Print Network (OSTI)

Forest Norco Belmont El Monte Lakewood Norwalk Berkeley Encinitas Lancaster Oakdale Beverly Hills Escalon Downey Laguna Hills Newark Bell Gardens Dublin Laguna Niguel Newport Beach Bellflower El Cajon Lake Hills Glendora Mammoth Lakes Piedmont Chowchilla Grand Terrace Manhattan Beach Pismo Beach Chula Vista

218

Zinc Oxide and Nitride Nanowire Based Light Emitting Diodes  

E-Print Network (OSTI)

only be able to find incandescent lightbulbs and fluorescent10: Output spectra of incandescent light bulb, fluorescentemission spectra. The incandescent light bulb for example

Lai, Elaine Michelle

2009-01-01T23:59:59.000Z

219

Understanding Drooping Light Emitting Diodes CEEM | U.S. DOE...  

Office of Science (SC) Website

Impact Understanding "droop" may result in cheaper, more efficient LEDs; LEDs are more energy efficient, smaller, and longer-lived than incandescent lamps or fluorescent...

220

One-Step Synthesis of White-Light-Emitting Quantum Dots at Low Temperature  

Science Journals Connector (OSTI)

‡ National Sun Yat-sen University?Kaohsiung Medical University Joint Research Center, Kaohsiung 804, Taiwan ... Results from previous studies on white-light-emitting organic LEDs have led to the idea that white light could be generated by combining lights of the three primary colors (blue, green, and red). ... Finally, we developed a white-light, solid-state lighting device by using a 365-nm UV lamp as the pump source. ...

Chien-Chih Shen; Wei-Lung Tseng

2009-08-17T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Recent developments in the controlled synthesis and manipulation of electroactive organic polymers  

Science Journals Connector (OSTI)

...effect transistor/electro-optic switch or a light emitting diode device structure. Two examples will be discussed...effect transistor/electro-optic switch or a light emitting diode device structure. Two examples will be discussed...

1997-01-01T23:59:59.000Z

222

Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications  

Science Journals Connector (OSTI)

Materials for optoelectronics give a fascinating variety of issues to consider. Increasingly important are white light emitting diode (LED) and solar cell materials. Profound energy savings can be done by addressing new materials. White light emitting diodes are becoming common in our lighting scene. There is a great energy saving in the transition from the light bulb to white light emitting diodes via a transition of fluorescent light tubes. However, the white LEDs still suffer from a variety of challenges in order to be in our daily use. Therefore there is a great interest in alternative lighting solutions that could be part of our daily life. All materials create challenges in fabrication. Defects reduce the efficiency of optical transitions involved in the light emitting diode materials. The donor-acceptor co-doped SiC is a potential light converter for a novel monolithic all-semiconductor white LED. In spite of considerable research, the internal quantum efficiency is far less than theoretically predicted and is likely a fascinating scientific field for studying materials growth, defects and optical transitions. Still, efficient Si-based light source represents an ongoing research field in photonics that requires high efficiency at room temperature, wavelength tuning in a wide wavelength range, and easy integration in silicon photonic devices. In some of these devices, rare earth doped materials is considered as a potential way to provide luminescence spanning in a wide wavelength range. Divalent and trivalent oxidation states of Eu provide emitting centers in the visible region. In consideration, the use of Eu in photonics requires Eu doped thin films that are compatible with CMOS technology but for example faces material science issues like a low Eu solid solubility in silica. Therefore approaches aim to obtain efficient light emission from silicon oxycarbide which has a luminescence in the visible range and can be a host material for rare earth ions. The silicon oxycarbide material can provide potential applications of the Eu luminescent materials to challenging conditions like high temperatures or aggressive environments where the silica has weaknesses. In some approaches, silicon rich silicon oxide that contain silicon nanoclusters emit red to near infrared luminescence due to quantum confinement effects while luminescence at shorter wavelength is difficult due to the interplay of defects and quantum confinement effects. In addition it is applicable as low-k dielectric, etch-stop and passivation layers. It also has an optical band-gap that is smaller than that of SiO2 which may facilitate carrier injection at lower voltages that is suitable for optoelectronics. From materials perspective of emerging materials, it seems distant to consider system related issues. The future demands on communication and lighting devices require higher information flows in modernized optical devices, for example by replacing electrical interconnects with their optical counterparts and tunable backgrounds filters for integrated optics or photonics applications. However, there are materials issues related to such device performance, for example by a non-linearity, that provide the possibility for selective removal or addition of wavelengths using hetero structures in which one side of the structure enhances the light-to-dark sensitivity of long and medium wavelength channels and diminish others, and an opposite behavior in other face of the structure. Certainly materials may be applied in various innovative ways to provide new performances in devices and systems. In any materials and device evaluation, reliability issues in passivation and packaging of semiconductor device structures provide a base knowledge that may be used to evaluate new concepts. Fundamental aspects of dielectric constant, bandgap and band offsets between the valence and conduction band edges between the passivation layer and the semiconductor create a foundation for understanding the device performance. In relation to these, the surface pre-treatment and deposit

Peter Wellmann; Mikael Syv?j?rvi; Haiyan Ou

2014-01-01T23:59:59.000Z

223

High Efficiency Organic Light Emitting Devices for Lighting  

SciTech Connect

Incorporate internal scattering layers and microlens arrays in high efficiency OLED to achieve up to 70% EQE.

So, Franky; Tansu, Nelson; Gilchrist, James

2013-06-30T23:59:59.000Z

224

Highly efficient blue organic light emitting devices with indium...  

NLE Websites -- All DOE Office Websites (Extended Search)

zinc oxide (GZO) uniformly over a 12” diameter area at room temperature on polyethylene terephthalate (PET). During deposition, the system heats to about 60oC due to the...

225

Oxycarbonitride phosphors and light emitting devices using the same  

DOE Patents (OSTI)

Disclosed herein is a novel family of oxycarbonitride phosphor compositions and light emitting devices incorporating the same. Within the sextant system of M--Al--Si--O--N--C--Ln and quintuplet system of M--Si--O--N--C--Ln (M=alkaline earth element, Ln=rare earth element), the phosphors are composed of either one single crystalline phase or two crystalline phases with high chemical and thermal stability. In certain embodiments, the disclosed phosphor of silicon oxycarbonitrides emits green light at wavelength between 530-550 nm. In further embodiments, the disclosed phosphor compositions emit blue-green to yellow light in a wavelength range of 450-650 nm under near-UV and blue light excitation.

Li, Yuanqiang; Romanelli, Michael Dennis; Tian, Yongchi

2014-07-08T23:59:59.000Z

226

Tunable White-Light-Emitting Mn-Doped ZnSe Nanocrystals Vijay Kumar Sharma,  

E-Print Network (OSTI)

Tunable White-Light-Emitting Mn-Doped ZnSe Nanocrystals Vijay Kumar Sharma, Burak Guzelturk, Talha report white-light-emitting Mn-doped ZnSe nanocrystals (NCs) that are synthesized using modified orange emission (580 nm), allowed us to achieve excitation wavelength tailorable white-light generation

Demir, Hilmi Volkan

227

Wide-Area Thermal Processing of Light-Emitting Materials  

SciTech Connect

Silicon carbide based materials and devices have been successfully exploited for diverse electronic applications. However, they have not achieved the same success as Si technologies due to higher material cost and higher processing temperatures required for device development. Traditionally, SiC is not considered for optoelectronic applications because it has an indirect bandgap. However, AppliCote Associates, LLC has developed a laser-based doping process which enables light emission in SiC through the creation of embedded p-n junctions. AppliCote laser irradiation of silicon carbide allows two different interaction mechanisms: (1) Laser conversion or induced phase transformation which creates carbon rich regions that have conductive properties. These conductive regions are required for interconnection to the light emitting semiconducting region. (2) Laser doping which injects external dopant atoms into the substrate that introduces deep level transition states that emit light when electrically excited. The current collaboration with AppliCote has focused on the evaluation of ORNL's unique Pulse Thermal Processing (PTP) technique as a replacement for laser processing. Compared to laser processing, Pulse Thermal Processing can deliver similar energy intensities (20-50 kW/cm2) over a much larger area (up to 1,000 cm2) at a lower cost and much higher throughput. The main findings of our investigation; which are significant for the realization of SiC based optoelectronic devices, are as follows: (1) The PTP technique is effective in low thermal budget activation of dopants in SiC similar to the laser technique. The surface electrical conductivity of the SiC samples improved by about three orders of magnitude as a result of PTP processing which is significant for charge injection in the devices; (2) The surface composition of the SiC film can be modified by the PTP technique to create a carbon-rich surface (increased local C:Si ratio from 1:1 to 2.9:1). This is significant as higher thermal and electrical conductivities of the surface layer are critical for a successful development of integrated optoelectronic devices; and (3) PTP provides low thermal budget dopant activation with a controlled depth profile, which can be exploited for high performance device development with selective patterning of the substrate. This project has successfully demonstrated that a low thermal budget annealing technique, such as PTP, is critical to defining the path for low cost electronic devices integrated on glass or polymeric substrates. This project is complimentary to the goals of the Solid State Lighting Program within DOE. It involves new manufacturing techniques for light emitting materials that are potentially much lower cost and energy efficient than existing products. Significant opportunity exists for further exploration of AppliCote's material and device technology in combination with ORNL's PTP technique, modeling, and characterization capabilities.

Duty, C.; Quick, N. (AppliCote Associates, LLC) [AppliCote Associates, LLC

2011-09-30T23:59:59.000Z

228

Carbonitride based phosphors and light emitting devices using the same  

DOE Patents (OSTI)

Disclosed herein is a novel group of carbidonitride phosphors and light emitting devices which utilize these phosphors. In certain embodiments, the present invention is directed to a novel family of carbidonitride-based phosphors expressed as follows: Ca.sub.1-xAl.sub.x-xySi.sub.1-x+xyN.sub.2-x-xyC.sub.xy:A; (1) Ca.sub.1-x-zNa.sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x-xyC.sub.xy:- A; (2) M(II).sub.1-x-zM(I).sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x- -xyC.sub.xy:A; (3) M(II).sub.1-x-zM(I).sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x-xy-2w/- 3C.sub.xyO.sub.w-v/2H.sub.v:A; and (4) M(II).sub.1-x-zM(I).sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x-xy-2w/- 3-v/3C.sub.xyO.sub.wH.sub.v:A, (4a) wherein 0xy+z, and 0

Li, Yuanqiang; Tian, Yongchi; Romanelli, Michael Dennis

2013-08-20T23:59:59.000Z

229

Fabrication and optimization of light emitting devices with core-shell quantum dots  

E-Print Network (OSTI)

Quantum dot light emitting devices (QD-LEDs) are promising options for the next generation of solid state lighting, color displays, and other optoelectronic applications. Overcoating quantum dots (QDs) -- semiconducting ...

Song, Katherine Wei

2013-01-01T23:59:59.000Z

230

Solid-State Lighting Home Page for Semiconductor light emitting diodes  

NLE Websites -- All DOE Office Websites (Extended Search)

Since 04/21/2002 Since 04/21/2002 Solid-State Lighting Archival Website As of September 1, 2006, this website is not being actively maintained. We hope that the collected news items, tracking reports, literature summaries, and links to various industry resources will be of archival value to the SSL community. Please visit Sandia's current and active Solid-State Lighting Energy Frontier Research Center website at http://ssls.sandia.gov/. Solid-State Lighting Science Energy Frontier Research Center The Mission of this site was to provide a comprehensive portal to the emerging knowledge that will enable the promise of solid-state lighting The site was active between December 2001 and September 2006, and the goal was: " Â… to gather together information relevant to solid-state lighting, and

231

Pseudomorphic Mid-Ultraviolet Light-Emitting Diodes for Water Purification  

Science Journals Connector (OSTI)

UVC light output of 66 mW at 300 mA CW has been achieved from LEDs on AlN substrates with extensive photon extraction. Proper vessel design allows for efficient irradiation of a water...

Moe, Craig; Chen, Jianfeng; Grandusky, James R; Mendrick, Mark C; Randive, Rajul; Rodak, Lee E; Sampath, Anand V; Wraback, Michael; Schowalter, Leo

232

Quantum Dot Light-Emitting Diode with Quantum Dots Inside the Hole Transporting Layers  

E-Print Network (OSTI)

architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs

Demir, Hilmi Volkan

233

Light extraction enhanced white light-emitting diodes with multi-layered phosphor configuration  

E-Print Network (OSTI)

The phosphor conversion efficiency ( ? PCE ) can becalculated by ? PCE = ? q × ? p = P Y + P R P B o ? P Bconversion efficiency (PCE) of BL-R/Y LEDs and mixed-RY LEDs

You, Jiun Pyng; Tran, Nguyen T.; Shi, Frank G.

2010-01-01T23:59:59.000Z

234

Design and modelling of novel waveguide and light-emitting-diode-based photoreactors.  

E-Print Network (OSTI)

??In this dissertation, investigations on a range of photocatalytic reactors based on waveguides (optical fibres and quartz tubes) are presented. A study on a coupled… (more)

Denny, Frans

2010-01-01T23:59:59.000Z

235

Colloidal quantum-dot light-emitting diodes with metal-oxide charge  

E-Print Network (OSTI)

across the pixel area, and fabrication required the specialized deposition technique of energy-neutral over previously reported structures8,10 . Previous efforts at building colloidal quantum-dot (QD) LEDs concentrations and energy-band

236

Green Light Emitting Diodes under Photon Modulation Yufeng Li1,2  

E-Print Network (OSTI)

Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180 ABSTRACT With an external laser periods of GaInN/GaN MQWs with well width of 3 nm were grown above. A 0.03 µm p-type AlGaN cladding layer

Wetzel, Christian M.

237

Studying collisions in the general physics laboratory with quadrature light emitting diode sensors  

Science Journals Connector (OSTI)

We have developed the means to measure position rapidly and precisely as a function of time in the general physics laboratory. These measurements are of sufficient quality that velocities and accelerations can be calculated from the position data using numerical derivatives. The precision of the measurements is such that any disagreement between theoretical expectations and experimental measurements is less than a few percent. Measurements of the system under study can be made as rapidly as every 200 ?s which is faster than the typical time scales over which the system changes. Measuring rapidly also allows one to investigate additional phenomena not previously accessible and to see features of the physics previously unobserved. The measurement system is based on commercially available sensors computer hardware and computer software (LABVIEW™). Many general physics laboratories based on this system have been developed but only an investigation of Newton’s second law will be described here.

P. A. DeYoung; B. Mulder

2002-01-01T23:59:59.000Z

238

Control of the emission wavelength of gallium nitride-based nanowire light-emitting diodes.  

E-Print Network (OSTI)

??Halbleiter-Nanosäulen (auch -Nanodrähte) werden als Baustein für Leuchtdioden (LEDs) untersucht. Herkömmliche LEDs aus Galliumnitrid (GaN) bestehen aus mehreren Kristallschichten auf einkristallinen Substraten. Ihr Leistungsvermögen wird… (more)

Wölz, Martin

2013-01-01T23:59:59.000Z

239

Confocal microphotoluminescence of InGaN-based light-emitting diodes Koichi Okamoto,a  

E-Print Network (OSTI)

for conventional incandescent and fluorescent light bulbs.5 However, luminous efficacies of commercial white LEDs spectrum region, the external quantum efficiency ext of the LED has achieved 20% at room temperature 25 lm/W have been still lower than that of fluorescent tubes 75 lm/W . Thus, the most important re

Okamoto, Koichi

240

A R T I C L E www.rsc.org/materials  

E-Print Network (OSTI)

chemically synthesized for applications in organic light emitting diodes.16 The immobilization of negatively

Pfeifer, Holger

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

N D'ORDRE 2008-Anne 2008 Prsente pour obtenir le grade de  

E-Print Network (OSTI)

diffusion." Abstract This work reports on color control of organic light-emitting diodes (OLEDs), which

Boyer, Edmond

242

E-Print Network 3.0 - algan-based laser diodes Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

GaN and GaNAlGaN quantum structures for UV electroabsorption modulators Summary: optoelectronics industry.1,2 In the visible spectral range, light emitting diodes,3 laser...

243

Ultra-thin ohmic contacts for p-type nitride light emitting devices  

DOE Patents (OSTI)

A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.

Raffetto, Mark (Raleigh, NC); Bharathan, Jayesh (Cary, NC); Haberern, Kevin (Cary, NC); Bergmann, Michael (Chapel Hill, NC); Emerson, David (Chapel Hill, NC); Ibbetson, James (Santa Barbara, CA); Li, Ting (Ventura, CA)

2012-01-03T23:59:59.000Z

244

Spontaneous emission factor for semiconductor superluminescent diodes Yongsheng Zhao, Weihua Han, Junfeng Song, Xuemei Li, Yang Liu, Dingsan Gao,  

E-Print Network (OSTI)

Spontaneous emission factor for semiconductor superluminescent diodes Yongsheng Zhao, Weihua Han emission factor is an important parameter for the characterization of semiconductor light emitting devices difference involved in each device. In this article, the spontaneous emission factor for superluminescent

Cao, Hui

245

Charge-carrier transport in amorphous organic semiconductors  

E-Print Network (OSTI)

Since the first reports of efficient luminescence and absorption in organic semiconductors, organic light-emitting devices (OLEDs) and photovoltaics (OPVs) have attracted increasing interest. Organic semiconductors have ...

Limketkai, Benjie, 1982-

2008-01-01T23:59:59.000Z

246

Red light emitting solid state hybrid quantum dot–near-UV GaN LED devices  

Science Journals Connector (OSTI)

We produced core–shell (CdSe)ZnSe quantum dots by direct colloidal chemical synthesis and the surface-passivation method—an overcoating of the core CdSe with a larger-bandgap material ZnSe. The (CdSe)ZnSe quantum dots(QDs) play the role of a colour conversion centre. We call these quantum dots nanophosphors. We fabricated red light emitting hybrid devices of (CdSe)ZnSe QDs and a near-UV GaN LED by combining red light emitting (CdSe)ZnSe quantum dots (as a colour conversion centre) with a near-UV(NUV) GaN LED chip (as an excitation source). A few good red phosphors have been known for UV excitation wavelengths, and red phosphors for UV excitation have been sought for a long time. Here we tested the possibility of using (CdSe)ZnSe QDs as red nanophosphors for UV excitation. The fabricated red light emitting hybrid device of (CdSe)ZnSe and a NUV GaN LED chip showed a good luminance. We demonstrated that the (CdSe)ZnSe quantum dots were promising red nanophosphors for NUV excitation and that a red LED made of QDs and a NUV excitation source was a highly efficient hybrid device.

Hongjoo Song; Seonghoon Lee

2007-01-01T23:59:59.000Z

247

Structure of Molecular Thin Films for Organic Electronics | Stanford...  

NLE Websites -- All DOE Office Websites (Extended Search)

such as light emitting diodes (OLED) are already on the market, other application such as solar cells, integrated circuits, and sensors are still a topic of research. Here, the...

248

Deformation of metallic liquid drop by electric field for contacts in molecular–organic electronics  

Science Journals Connector (OSTI)

...followed by a heat treatment at 120C...c) Polymer solar cells and light-emitting...form of a clear pump-dependent modulated...light-emitting diodes and solar cells PLEDs...case of the EF-assisted alloy printing...set of two dozen solar cells and LEDs...with a 405nm pump and a 405nm modulated...

2009-01-01T23:59:59.000Z

249

Ultra-thin ohmic contacts for p-type nitride light emitting devices  

DOE Patents (OSTI)

A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; Bergmann, Michael; Emerson, David; Ibbetson, James; Li, Ting

2014-06-24T23:59:59.000Z

250

Organic light-emitting transistors using concentric source/drain electrodes on a molecular adhesion layer  

E-Print Network (OSTI)

for optoelectronic devices such as photo- voltaic cells and photodectors,12,18,19,21-25 due to their potential collected in the radial direction. Coaxial structures have been reported for optoelectronic devices based

251

Cone–rod receptor spaces with illustrations that use CRT phosphor and light-emitting-diode spectra  

Science Journals Connector (OSTI)

The purpose of the study is to characterize the excitation of the three cone types and the rods in a colorimetric system. Two representations of photoreceptor activity are developed....

Shapiro, Arthur G; Pokorny, Joel; Smith, Vivianne C

1996-01-01T23:59:59.000Z

252

Synthesis of High-Triplet-Energy Host Polymer for Blue and White Electrophosphorescent Light-Emitting Diodes  

Science Journals Connector (OSTI)

A high-triplet-energy host polymer consisting of 9-(4-(bis(9-(2-ethylhexyl)-9H-carbazol-3-yl)methyl)phenyl)-9H-carbazole and tetraphenylsilane units was designed and synthesized. The triplet energy (2.67 eV) is one of the highest values reported for ...

Fei Xu; Ji-Hoon Kim; Hee Un Kim; Jae-Ho Jang; Kyoung Soo Yook; Jun Yeob Lee; Do-Hoon Hwang

2014-10-23T23:59:59.000Z

253

Development of a cost effective surface-patterned transparent conductive coating as top-contact of light emitting diodes  

SciTech Connect

Sol-gel process has been used to form indium zinc oxide films using an optimized combination of zinc to indium concentration in the precursor solutions. Different structures, like one (1D) and two-dimensional (2D) gratings and diffractive optical elements (DOEs) in the form of Fresnel lens are fabricated on the film surface of proposed top metal contact of LED by imprint soft lithography technique. These structures can enhance the LED's light extraction efficiency (LEE) or can shape the output beam pattern, respectively. Several characterizations are done to analyze the material and structural properties of the films. The presence of 1D and 2D gratings as well as DOEs is confirmed from field emission scanning electron and atomic force microscopes analyses. Although, X-ray diffraction shows amorphous nature of the film, but transmission electron microscopy study shows that it is nano crystalline in nature having fine particles (?8?nm) of hexagonal ZnO. Shrinkage behaviour of gratings as a function of curing temperature is explained by Fourier transform infra-red spectra and thermo gravimetric-differential thermal analysis. The visible transmission and sheet resistance of the sample are found comparable to tin doped indium oxide (ITO). Therefore, the film can compete as low cost substitute of ITO as top metal contact of LEDs.

Haldar, Arpita [Department of Applied Optics and Photonics, University of Calcutta, Kolkata-700009 (India); Sol-Gel Division, CSIR-Central Glass and Ceramic Research Institute, Kolkata 700032 (India); Bera, Susanta; Jana, Sunirmal, E-mail: sjana@cgcri.res.in, E-mail: srirajib@yahoo.com [Sol-Gel Division, CSIR-Central Glass and Ceramic Research Institute, Kolkata 700032 (India); Bhattacharya, Kallol; Chakraborty, Rajib, E-mail: sjana@cgcri.res.in, E-mail: srirajib@yahoo.com [Department of Applied Optics and Photonics, University of Calcutta, Kolkata-700009 (India)

2014-05-21T23:59:59.000Z

254

Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes  

DOE Patents (OSTI)

A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.

Tansu, Nelson; Zhao, Hongping; Zhang, Jing; Liu, Guangyu

2014-04-01T23:59:59.000Z

255

Ligand-Passivated Eu:Y2O3 Nanocrystals as a Phosphor for White Light Emitting Diodes  

Science Journals Connector (OSTI)

As a comparison, incandescent bulbs have a CCT of 2800 K, cool white fluorescent bulbs have a CCT of 6000 K, and daylight is 4500 K. ... We review the history of lighting, discuss the benefits and challenges of the solid-state lighting technologies, and compare two approaches for generating white light from solid-state sources based on phosphor LEDs (which could be considered as solid-state replacement of fluorescent tubes) and multichip LED lamps, which offer many advantages, such as chromaticity control, better light quality, and higher efficiency. ... In addn., several water channels (putative proton pathways) leading from the QB pocket to the surface of the RC were delineated, one of which leads directly to the membrane surface. ...

Qilin Dai; Megan E. Foley; Christopher J. Breshike; Adrian Lita; Geoffrey F. Strouse

2011-08-24T23:59:59.000Z

256

The light-emitting diode (LED) is an fairly new kind of light source found currently in  

E-Print Network (OSTI)

this technology an ideal replacement for less efficient incandescent light sources, particularly in applications elevator lighting has the potential to achieve 25 percent greater efficiency than current incandescent ILLUMINATION LEVELS SIMILAR TO THOSE OF INCANDESCENT FIXTURES WHILE CUTTING ENERGY USE 45 PERCENT. ELEVATOR

257

Abstract --This letter presents highly-polarized edge light emitting diodes with high-confinement, strained, multiple  

E-Print Network (OSTI)

power. We characterize InGaAsP MQW ELED devices with different lengths and optical confinement factors that transitions involving the HH band provide gain/absorption to TE polarized light and those involving the LH band provide gain/absorption mostly to TM polarized light, and to a lesser extent to TE light [7

Coldren, Larry A.

258

The effect of nocturnal blue light exposure from light-emitting diodes on wakefulness and energy metabolism the following morning  

Science Journals Connector (OSTI)

The control of sleep/wakefulness is associated with the regulation of energy metabolism. The present experiment was designed to assess the effect of nocturnal blue light exposure on the control of sleep/wakefulne...

Momoko Kayaba; Kaito Iwayama; Hitomi Ogata…

2014-09-01T23:59:59.000Z

259

Development of a Selective Light-Emitting Diode Photolytic NO2 Converter for Continuously Measuring NO2 in the Atmosphere  

Science Journals Connector (OSTI)

Pyrex glass is cheaper and easier to process than quartz, and the transmission efficiency of UV light for Pyrex (ca. ... Zero air was passed through the PAN (or HONO) source to generate a standard PAN (or HONO) gas, which was introduced into the PLC, Mo, NO, and NO2 lines. ... The missing data in March (from 20 to 24) and April (11 and from 15 to 18) were due to a power outage of the dc power supply for the LEDs and errors in data acquisition, respectively. ...

Yasuhiro Sadanaga; Yuki Fukumori; Tadashi Kobashi; Makoto Nagata; Norimichi Takenaka; Hiroshi Bandow

2010-10-25T23:59:59.000Z

260

DOI: 10.1002/adma.200601908 Piezoelectric Gated Diode of a Single ZnO Nanowire**  

E-Print Network (OSTI)

Institute of Physics. DOI: 10.1063/1.2193468 Electrical and optoelectronic devices such as field class of organic optoelectronic devices has been demonstrated, i.e., organic light-emitting transistors

Wang, Zhong L.

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Designing solution-processable air-stable liquid crystalline crosslinkable semiconductors  

Science Journals Connector (OSTI)

...liquid crystal (LC) displays, flexible organic light emitting diode displays, low frequency radio frequency identification...liquid crystal (LC) displays, flexible organic light emitting diode displays, low frequency radio frequency identification...

2006-01-01T23:59:59.000Z

262

Structure and Ultrafast Dynamics of White-Light-Emitting CdSe Nanocrystals  

SciTech Connect

White-light emission from ultrasmall CdSe nanocrystals offers an alternative approach to the realization of solid-state lighting as an appealing technology for consumers. Unfortunately, their extremely small size limits the feasibility of traditional methods for nanocrystal characterization. This paper reports the first images of their structure, which were obtained using aberration-corrected atomic number contrast scanning transmission electron microscopy (Z-STEM). With subangstrom resolution, Z-STEM is one of the few available methods that can be used to directly image the nanocrystal's structure. The initial images suggest that they are crystalline and approximately four lattice planes in diameter. In addition to the structure, for the first time, the exciton dynamics were measured at different wavelengths of the white-light spectrum using ultrafast fluorescence upconversion spectroscopy. The data suggest that a myriad of trap states are responsible for the broad-spectrum emission. It is hoped that the information presented here will provide a foundation for the future development and improvement of white-light-emitting nanocrystals.

Bowers, Michael J [Vanderbilt University; McBride, James [Vanderbilt University; Garrett, Maria Danielle [Vanderbilt University; Sammons, Jessica A. [Vanderbilt University; Dukes, Albert [Vanderbilt University; Schreuder, Michael A. [Vanderbilt University; Watt, Tony L. [Vanderbilt University; Lupini, Andrew R [ORNL; Pennycook, Stephen J [ORNL; Rosenthal, Sandra [Vanderbilt University

2009-01-01T23:59:59.000Z

263

IEEE TRANSACTIONS ON IMAGE PROCESSING, 2013 1 Optimizing Apparent Display Resolution  

E-Print Network (OSTI)

are available today. With active-matrix organic light-emitting diode (AMOLED) technology even higher refresh

Magnor, Marcus

264

E-Print Network 3.0 - alters peripheral vascular Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

inserted... , interventional radiology; IV, intravenous; OLED, organic light-emitting diode; PICC, peripherally inserted Source: Stetten, George - Department of...

265

Energy Department Announces $10 Million for Innovative, Energy...  

Energy Savers (EERE)

the country. This funding will accelerate the development of high-quality light-emitting diode (LED) and organic light-emitting diode (OLED) products with the potential to...

266

Organic Membranes for Energy Conversion and "Green" Manufacturing  

NLE Websites -- All DOE Office Websites (Extended Search)

Organic Membranes for Energy Conversion and "Green" Manufacturing Organic Membranes for Energy Conversion and "Green" Manufacturing Speaker(s): John Kerr Date: January 17, 2002 - 12:00pm Location: Bldg. 90 Seminar Host/Point of Contact: Cynthia Tast Organic materials are central to the operation of energy conversion devices such as lithium batteries and fuel cells. Use of organic polymer membranes has been well established in the chlor-alkali and separations industries for several decades now. New applications such as light emitting diodes for displays and area lighting, organic photovoltaics for solar conversion and electrochromics illustrate the growing importance of organic materials in energetic applications. Understanding the operation of these materials, their limitations and advantages is of major importance to the successful

267

Ultra-thin titanium nanolayers for plasmon-assisted enhancement of bioluminescence of chloroplast in biological light emitting devices  

SciTech Connect

Ultra-thin titanium films were deposited via ultra-high vacuum ion beam sputter deposition. Since the asymmetric electric field of the metal foil plane matches the B-band absorption of chlorophyll a, the ultra-thin titanium nanolayers were able to generate surface plasmon resonance, thus enhancing the photoluminescence of chlorophyll a. Because the density of the states of plasmon resonance increases, the enhancement of photoluminescence also rises. Due to the biocompatibility and inexpensiveness of titanium, it can be utilized to enhance the bioluminescence of chloroplast in biological light emitting devices, bio-laser, and biophotonics.

Hsun Su, Yen [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China) [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Hsu, Chia-Yun; Chang, Chung-Chien [Science and Technology of Accelerator Light Source, Hsinchu 300, Taiwan (China) [Science and Technology of Accelerator Light Source, Hsinchu 300, Taiwan (China); Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Tu, Sheng-Lung; Shen, Yun-Hwei [Department of Resource Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)] [Department of Resource Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)

2013-08-05T23:59:59.000Z

268

Lattice mismatched epitaxy of heterostructures for non-nitride green light emitting devices  

E-Print Network (OSTI)

In this project, we implement modern metal organic chemical vapor deposition (MOCVD) technology to fabricate monolithic platforms which integrate traditionally incompatible materials with the ultimate goal of achieving ...

Mori, Michael James

2008-01-01T23:59:59.000Z

269

Calcium chloride electron injection/extraction layers in organic electronic devices  

SciTech Connect

Nontoxic calcium chloride (CaCl{sub 2}) was introduced into organic electronic devices as cathode buffer layer (CBL). The turn-on voltage and maximum luminance of organic light-emitting diode (OLED) with 1.5?nm CaCl{sub 2} was 3.5?V and 21 960?cd/m{sup 2}, respectively. OLED with 1.5?nm CaCl{sub 2} possessed comparable electroluminescent characteristics to that of the commonly used LiF. Moreover, the performance of the organic photovoltaic device with 0.5?nm CaCl{sub 2} was comparable to that of the control device with LiF. Therefore, CaCl{sub 2} has the potential to be used as the CBL for organic electronic devices.

Qu, Bo, E-mail: bqu@pku.edu.cn, E-mail: qhgong@pku.edu.cn; Gao, Zhi; Yang, Hongsheng; Xiao, Lixin; Chen, Zhijian; Gong, Qihuang, E-mail: bqu@pku.edu.cn, E-mail: qhgong@pku.edu.cn [State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China)

2014-01-27T23:59:59.000Z

270

Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same  

SciTech Connect

A conventional semiconductor LED is modified to include a microlens layer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness.

Tansu, Nelson; Gilchrist, James F; Ee, Yik-Khoon; Kumnorkaew, Pisist

2013-11-19T23:59:59.000Z

271

InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices  

SciTech Connect

We present the band parameters such as band gap, spin-orbit splitting energy, band offsets and strain of InGaAsBi on InP based on recent experimental data. It is shown that InGaAsBi is promising for near- and mid-infrared photonic devices operating from 0.3–0.8?eV (1.5–4??m) on conventional InP substrates. We also show how bismuth may be used to form alloys whereby the spin-orbit splitting energy (?{sub SO}) is large and controllable and can, for example, be made larger than the band gap (E{sub g}) thereby providing a means of suppressing non-radiative hot-hole producing Auger recombination and inter-valence band absorption both involving the spin-orbit band. This is expected to improve the high-temperature performance and thermal stability of light emitting devices.

Jin, Shirong; John Sweeney, Stephen [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)

2013-12-07T23:59:59.000Z

272

Synthetic Metals 155 (2005) 110 Poly(fluorene-oxadiazole) copolymer-based light-emitting  

E-Print Network (OSTI)

- tacts (anode and cathode), charge transport within the organic materials, electron and hole radiative transport/injection layer (ETL/EIL) between an active emissive layer (EL) and a cathode [2] and/or a hole of emissive polymer with charge transport material as an active emissive layer [5,6]. The polymer blend device

Kanicki, Jerzy

273

The synthesis of inorganic semiconductor nanocrystalline materials for the purpose of creating hybrid organic/inorganic light-emitting devices  

E-Print Network (OSTI)

Colloidal semiconductor nanocrystals (NCs) or quantum dots (QDs) can be synthesized to efficiently emit light from the ultraviolet, across the entire visible spectrum, and into the near infrared. This is now possible due ...

Steckel, Jonathan S. (Jonathan Stephen)

2006-01-01T23:59:59.000Z

274

High-Efficiency White Organic Light-Emitting Devices Based on a Highly Amorphous Iridium(III) Orange Phosphor  

E-Print Network (OSTI)

- didates as future illumination sources over the conventional incandescent bulbs and fluorescent lamps of the electroluminescence spectrum is observed, with the blue color intensity increasing relative to the orange component been prepared using this stacked concept with both fluorescent12,13 and phosphorescent emitters.14

275

Synthesis of visible light emitting self assembled Ge nanocrystals embedded within a SiO{sub 2} matrix  

SciTech Connect

As-grown light emitting self-assembled Ge nanocrystals (Ge-NCs) embedded in a SiO{sub 2} matrix were produced via a sequential deposition process of SiO{sub 2}/Ge/SiO{sub 2} layers employing a reactive radio frequency sputtering technique. Obtained Ge-NCs show a crystallographic phase, the proportion, size, quality, and specific orientation of which are determined by the oxygen partial pressure. Photoluminescence (PL) spectra indicate that the size distribution of Ge-NCs is reduced and centered on about 8 nm when higher oxygen partial pressure is employed; the formation of Ge-NCs is corroborated by transmission electron microscopy measurements, and their sizes are consistent with estimates from PL measurements. Resistivity measurements are explained by a near neighbors hopping process, with specific features depending on the Ge-NCs' size. The features of PL and resistivity measurements indicate that there is no appreciable dependence of the number of interfacial defects on the oxygen partial pressure.

Hernandez-Hernandez, A.; De Moure-Flores, F.; Quinones-Galvan, J. G.; Santoyo-Salazar, J.; Melendez-Lira, M. [Departamento de Fisica, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, A.P. 14740, C.P. 07300, Mexico, Distrito Federal (Mexico); Rangel-Kuoppa, V. T. [Institute of Semiconductor and Solid State Physics, Johannes Kepler Universitaet, A-4040 Linz (Austria); Plach, Thomas [Christian Doppler Laboratory for Microscopic and Spectroscopic Material Characterization, Center for Surface and Nanoanalytics, Johannes Kepler Universitaet, A-4040 Linz (Austria); Zapata-Torres, M. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Legaria IPN, Calzada Legaria 694, Col. Irrigacion, 11500 Mexico, Distrito Federal (Mexico); Hernandez-Hernandez, L. A. [Escuela Superior de Fisica y Matematicas del Instituto Politecnico Nacional, Edificio 9 U.P. Adolfo Lopez Mateos, Col. San Pedro Zacatenco, C.P. 07730 (Mexico)

2012-02-15T23:59:59.000Z

276

Polarized X-Rays Reveal Molecular Alignment in Printed Electronics  

NLE Websites -- All DOE Office Websites (Extended Search)

made possible by the development of solution-processable organic materials with optoelectronic properties. Organic light-emitting diodes (OLEDs) are already being produced...

277

Azido Functionalized Poly(3-hexylthiophene) and Method of Forming...  

NLE Websites -- All DOE Office Websites (Extended Search)

Marketing Summary Conductive polymers are finding mainstream applications in organic light-emitting diodes, capacitors, batteries, organic transistors, sensors, solar cells,...

278

Downsizing Has Its Rewards | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

resistance compared to polymeric sealants and meets the industry standard for organic solar cell (OSC) packaging and organic light emitting diodes. The metal sealants not only...

279

Theory and simulation of amorphous organic electronic devices  

E-Print Network (OSTI)

The electronic properties of amorphous organic thin films are of great interest due to their application in devices such as light emitting devices, solar cells, photodetectors, and lasers. Compared to conventional inorganic ...

Madigan, Conor (Conor Francis), 1978-

2006-01-01T23:59:59.000Z

280

Light-Emitting Tag Testing in Conjunction with Testing of the Minimum Gap Runner Turbine Design at Bonneville Dam Powerhouse 1  

SciTech Connect

This report describes a pilot study conducted by Tom Carlson of PNNL and Mark Weiland of MEVATEC Corp to test the feasibility of using light-emitting tags to visually track objects passing through the turbine environment of a hydroelectric dam. Light sticks were released at the blade tip, mid-blade, and hub in the MGR turbine and a Kaplan turbine at Bonneville Dam and videotaped passing thru the dam to determine visibility and object trajectories.

Carlson, Thomas J.; Weiland, Mark A.

2001-01-30T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Understanding the role of electron and hole trions on current transport in aluminium tris(8-hydroxyquinoline) using organic magnetoresistance  

SciTech Connect

The change in current through an organic light emitting diode (OLED) when it is placed in a magnetic field has been dubbed organic magnetoresistance and provides a means to understand the spin interactions that are occurring in working devices. Whilst there are a wide range of interactions that have been proposed to be the cause of the measured effects, there is still a need to identify their individual roles and in particular how they respond to an applied magnetic field. In this work, we investigate the effect of changing the balance of electron and hole injection in a simple aluminium tris(8-hydroxyqinoline) based OLED and demonstrate that the triplet polaron interaction appears to be much stronger for electrons than for holes in this material.

Zhang, Sijie; Gillin, W. P., E-mail: w.gillin@qmul.ac.uk [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom); Willis, M. [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Gotto, R.; Roy, K. A.; Kreouzis, T. [Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom); Rolfe, N. J. [Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom); University of Surrey, Guildford, Surrey GU2 5XH (United Kingdom)

2014-01-27T23:59:59.000Z

282

Wafer-scale surface roughening for enhanced light extraction of high power AlGaInP-based light-emitting diodes  

Science Journals Connector (OSTI)

A new approach to surface roughening was established and optimized in this paper for enhancing the light extraction of high power AlGaInP-based LEDs, by combining ultraviolet (UV)...

Park, Hyeong-Ho; Zhang, Xin; Cho, Yunae; Kim, Dong-Wook; Kim, Joondong; Lee, Keun Woo; Choi, Jehyuk; Lee, Hee Kwan; Jung, Sang Hyun; Her, Eun Jin; Kim, Chang Hwan; Moon, A-Young; Shin, Chan-Soo; Shin, Hyun-Beom; Sung, Ho Kun; Park, Kyung Ho; Park, Hyung-Ho; Kim, Hi-Jung; Kang, Ho Kwan

2014-01-01T23:59:59.000Z

283

Spectral optimization of the color temperature tunable white light-emitting diode (LED) cluster consisting of direct-emission blue and red LEDs and a diphosphor conversion LED  

Science Journals Connector (OSTI)

The correlated color temperature (CCT) tunable white-light LED cluster, which consists of direct-emission blue and red LEDs as well as phosphor-conversion (PC) LEDs packaged by...

Zhong, Ping; He, Guoxing; Zhang, Minhao

2012-01-01T23:59:59.000Z

284

Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN  

Science Journals Connector (OSTI)

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN...

Yu, Chun-Ta; Lai, Wei-Chih; Yen, Cheng-Hsiung; Hsu, Hsu-Cheng; Chang, Shoou-Jinn

2014-01-01T23:59:59.000Z

285

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem  

E-Print Network (OSTI)

nitrogen atmosphere for acceptor activation, thus making an LED p-i-n structure.. For simplicity, hereafter we will refer to structures grown using 120 sccm of TMI as QW1 and LED1, and those grown using 300 sccm as QW2 and LED2. A second set of In... was provided by a HeCd laser source and the PL emission collected and dispersed within a 0.85 m single grating spectrometer. LED samples were processed into side-contacted structures as follows: mesas were formed with a Cl2-Ar inductively coupled plasma...

Massabuau, F. C.-P.; Davies, M. J.; Oehler, F.; Pamenter, S. K.; Thrush, E. J.; Kappers, M. J.; Kovács, A.; Williams, T.; Hopkins, M. A.; Humphreys, C. J.; Dawson, P.; Dunin-Borkowski, R. E.; Etheridge, J.; Allsopp, D. W. E.; Oliver, R. A.

2014-09-19T23:59:59.000Z

286

Enhanced Performance in Fluorene-Free Organometal Halide Perovskite Light Emitting Diodes using Tunable, Low Electron-Affinity Oxide Electron-Injectors  

E-Print Network (OSTI)

(N,N-di-p-methoxyphenylamine)-9,9’-spiro-bifluorene (spiro-OMeTAD)[17] or F8, thus finding new electrode materials that overcome these limitations is essential for the commercial application of perovskite optoelectronics. Stable metal oxide electrodes, such as Zn...

Hoye, Robert L. Z.; Chua, Matthew R.; Musselman, Kevin P.; Li, Guangru; Lai, May-Ling; Tan, Zhi-Kuang; Greenham, Neil C.; MacManus-Driscoll, Judith L.; Friend, Richard H.; Credgington, Dan

2015-01-09T23:59:59.000Z

287

Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes  

E-Print Network (OSTI)

T.P. , IEE Proceedings-Optoelectronics 144, 1 (1997). Kishof Energy (BTS) and the Optoelectronics Industry Developmentin semiconductor optoelectronics in recent years. Within two

Odnoblyudov, Vladimir

2006-01-01T23:59:59.000Z

288

Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer  

Science Journals Connector (OSTI)

A surface plasmon (SP)-enhanced nanoporous GaN-based green LED based on top-down processing technology has been successfully fabricated. This SP-enhanced LED consists of nanopores...

Yu, Zhi-Guo; Zhao, Li-Xia; Wei, Xue-Cheng; Sun, Xue-Jiao; An, Ping-Bo; Zhu, Shi-Chao; Liu, Lei; Tian, Li-Xin; Zhang, Feng; Lu, Hong-Xi; Wang, Jun-Xi; Zeng, Yi-Ping; Li, Jin-Min

2014-01-01T23:59:59.000Z

289

High Resolution Additive Patterning of Nanoparticles and Polymers Enabled by Vapor Permeable Polymer Templates  

E-Print Network (OSTI)

anodes for flexible organic solar cell modules. Thin Solidorganic field effect transistors, 73 or- ganic light emitting diodes, 74 and solar cells

Demko, Michael Thomas

2012-01-01T23:59:59.000Z

290

Excellence in Celebrating Small Business: Meet the Woman who...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

tools and provides process engineering services for organic light emitting diodes, thin film solar, and semiconductor manufacturing. | Photo courtesy of Colnatec Woman-Owned...

291

Woman-Owned Small Businesses Making a Big Impact on Clean Energy...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

film thickness monitoring tools and provides process engineering services for organic light emitting diodes, thin film solar, and semiconductor manufacturing. | Photo courtesy...

292

EERE Blog | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

film thickness monitoring tools and provides process engineering services for organic light emitting diodes, thin film solar, and semiconductor manufacturing. | Photo courtesy...

293

Sandia National Laboratories: ECIS-Veeco: Research Driving Down...  

NLE Websites -- All DOE Office Websites (Extended Search)

with: efficient LED lighting * high-brightness LED * high-volume MOCVD * LED * light-emitting diode * metal organic chemical vapor deposition * MOCVD * modeling III-nitride-based...

294

Synthesis of Fluorescent C2-Bridged Teraryls and Quateraryls for Blue, Sky-Blue, and Green Color Light-Emitting Devices  

Science Journals Connector (OSTI)

Synthesis of Fluorescent C2-Bridged Teraryls and Quateraryls for Blue, Sky-Blue, and Green Color Light-Emitting Devices ... UV–vis, fluorescence spectra, and cyclic voltammograms of 6a–e and 9a–c; atom coordinates and absolute energies and TGA plots of 6a, and 9a,b; X-ray data of 6b; NMR spectra of 3c,e, 4a–c, 4e, 6a–e, and 9a–c. ...

Atul Goel; Ashutosh Sharma; Madhu Rawat; R. S. Anand; Ruchir Kant

2014-10-23T23:59:59.000Z

295

MMMaaattteeerrriiiaaalllsss SSSeeemmmiiinnnaaarrr There have been great interests in recent years in exploring the use of organic-inorganic hybrid electronic  

E-Print Network (OSTI)

Early Career Development (CAREER) Award from the National Science Foundation and a Solar Energy energy applications including photovoltaics and light-emitting devices (LEDs). Organic electronic materials such as conjugated polymers have advantages in low material cost, tunability in material

296

New N-Type Polymers for Organic Photovoltaics: Cooperative Research and Development Final Report, CRADA Number CRD-06-177  

SciTech Connect

This CRADA will develop improved thin film organic solar cells using a new n-type semiconducting polymer. High efficiency photovoltaics (PVs) based on inorganic semiconductors have good efficiencies (up to 30%) but are extremely expensive to manufacture. Organic PV technology has the potential to overcome this problem through the use of high-throughput production methods like reel-to-reel printing on flexible substrates. Unfortunately, today's best organic PVs have only a few percent efficiency, a number that is insufficient for virtually all commercial applications. The limited choice of stable n-type (acceptor) organic semiconductor materials is one of the key factors that prevent the further improvement of organic PVs. TDA Research, Inc. (TDA) previously developed a new class of electron-deficient (n-type) conjugated polymers for use in organic light emitting diodes (OLEDs). During this project TDA in collaboration with the National Renewable Energy Laboratory (NREL) will incorporate these electron-deficient polymers into organic photovoltaics and investigate their performance. TDA Research, Inc. (TDA) is developing new materials and polymers to improve the performance of organic solar cells. Materials being developed at TDA include spin coated transparent conductors, charge injection layers, fullerene derivatives, electron-deficient polymers, and three-phase (fullerene/polythiophene/dye) active layer inks.

Olson, D.

2014-08-01T23:59:59.000Z

297

Metal oxide/organic interface investigations for photovoltaic devices  

E-Print Network (OSTI)

summarises work I have carried out as a PhD student of the Optoelectronics Group at Cavendish Laboratory of the University of Cambridge since October 2010. I am thankful to the Engineering and Physical Sciences Research Council and the A.G. Leventis... are often used in many other optoelectronic devices such as photovoltaics and light emitting diodes. Sufficiently conducting oxides with the appropriate electron affinities and ionisation potentials, can be employed as charge transport and injection layers...

Pachoumi, Olympia

2014-10-07T23:59:59.000Z

298

A Direct White-Light-Emitting Metal?Organic Framework with Tunable Yellow-to-White Photoluminescence by Variation of Excitation Light  

Science Journals Connector (OSTI)

Allendorf, M. D., Bauer, C. A., Bhakta, R. K. and Houk, R. J. T. Chem. ... (a) Pigge, F. C., Burgard, M. D. and Rath, N. P. Cryst. ...

Ming-Sheng Wang; Sheng-Ping Guo; Yan Li; Li-Zhen Cai; Jian-Ping Zou; Gang Xu; Wei-Wei Zhou; Fa-Kun Zheng; Guo-Cong Guo

2009-09-02T23:59:59.000Z

299

2010 Minerals Yearbook U.S. Department of the Interior  

E-Print Network (OSTI)

circuits (ICs) and optoelectronic devices [laser diodes, light-emitting diodes (LEDs), photodetectors

300

Blue light emitting thiogallate phosphor  

DOE Patents (OSTI)

A crystalline blue emitting thiogallate phosphor of the formula RGa.sub.2 S.sub.4 :Ce.sub.x where R is selected from the group consisting of calcium, strontium, barium and zinc, and x is from about 1 to 10 atomic percent, the phosphor characterized as having a crystalline microstructure on the size order of from about 100 .ANG. to about 10,000 .ANG. is provided together with a process of preparing a crystalline blue emitting thiogallate phosphor by depositing on a substrate by CVD and resultant thin film electroluminescent devices including a layer of such deposited phosphor on an ordinary glass substrate.

Dye, Robert C. (Los Alamos, NM); Smith, David C. (Los Alamos, NM); King, Christopher N. (Portland, OR); Tuenge, Richard T. (Hillsboro, OR)

1998-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy  

SciTech Connect

Infrared electroluminescence was observed from GeSn/Ge p-n heterojunction diodes with 8% Sn, grown by molecular beam epitaxy. The GeSn layers were boron doped, compressively strained, and pseudomorphic on Ge substrates. Spectral measurements indicated an emission peak at 0.57 eV, about 50 meV wide, increasing in intensity with applied pulsed current, and with reducing device temperatures. The total integrated emitted power from a single edge facet was 54 {mu}W at an applied peak current of 100 mA at 100 K. These results suggest that GeSn-based materials maybe useful for practical light emitting diodes operating in the infrared wavelength range near 2 {mu}m.

Gupta, Jay Prakash; Bhargava, Nupur; Kim, Sangcheol; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)] [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States); Adam, Thomas [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)] [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)

2013-06-24T23:59:59.000Z

302

Fluorescence quenching in an organic donor-acceptor dyad: A first principles study  

E-Print Network (OSTI)

are prototypical organic dyes frequently used in organic solar cells and light emitting devices. Recent Förster-resonant-energy Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA Received 14 April 2009-transfer experiments on a bridged organic dyad consisting of triphenyl diamine as an energy-donor and perylene bisimide

Tretiak, Sergei

303

Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors  

SciTech Connect

The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of charge carriers is known to evolve as the carrier concentration increases, due to the presence of intrinsic disorder in organic semiconductors. Thus, a complementary question is: how does the nature of charge transport change as a function of carrier concentration?

Zhu, Xiaoyang

2014-12-10T23:59:59.000Z

304

Distinct and Cooperative Functions of Phytochromes A, B, and C in the Control of Deetiolation and Flowering in Rice  

Science Journals Connector (OSTI)

...otherwise described, we used R light-emitting diode panel (Model LED-R; EYELA), FR light-emitting diode panel (Model LED-FR; EYELA), and blue light-emitting diode panel (Model LED-B; EYELA...

Makoto Takano; Noritoshi Inagaki; Xianzhi Xie; Natsu Yuzurihara; Fukiko Hihara; Toru Ishizuka; Masahiro Yano; Minoru Nishimura; Akio Miyao; Hirohiko Hirochika; Tomoko Shinomura

2005-11-08T23:59:59.000Z

305

Building interactive systems using unconventional electronics  

Science Journals Connector (OSTI)

Many interactive systems use "conventional" silicon- based sensors and electronics that limit their functionality and scalability. Organic, amorphous inorganic, and other "unconventional" electronics are ideal for applications that require mechanical ... Keywords: fabrication, large-area, organic light- emitting diode, piezoelectric

John Sarik; Ioannis Kymissis

2011-01-01T23:59:59.000Z

306

Text-Alternative Version: Challenges in OLED Research and Development  

Energy.gov (U.S. Department of Energy (DOE))

Narrator: Organic light-emitting diodes, OLEDs, are made using organic carbon-based materials. Unlike LEDs, which are small point light sources, OLEDs are made in sheets that create diffuse area...

307

Kinetic Control of Recombination in Organic Photovoltaics: The Role of Spin  

E-Print Network (OSTI)

In photovoltaic diodes recombination of photogenerated electrons and holes is a major loss process. Biological light harvesting complexes (LHCs) prevent recombination via the use of cascade structures, which lead to spatial separation of charge-carriers1. In contrast, the nanoscale morphology and high charge densities in organic photovoltaic cells (OPVs) give a high rate of electron-hole encounters, which should result in the formation of spin triplet excitons, as in organic light emitting diodes (OLEDs)2. OPVs would have poor quantum efficiencies if every encounter lead to recombination, but state-of-the-art OPVs demonstrate near-unity quantum efficiency3. Here we show that this suppression of recombination can be engineered through the interplay between spin, energetics and delocalisation of electronic excitations in organic semiconductors. We use time-resolved spectroscopy to study a series of model, high efficiency polymer-fullerene systems in which the lowest lying molecular triplet exciton (T1) (on the polymer) lies below the intermolecular charge transfer state (CT). We observe the formation of T1 states following bimolecular recombination, indicating that encounters of spin-uncorrelated electrons and holes generate CT states with both spin singlet (1CT) and spin triplet (3CT) characters. We show that triplet exciton formation can be the major loss mechanism in OPVs. However, we find that even when energetically favoured, the relaxation of 3CT to T1 can be strongly suppressed, via control over wavefunction delocalisation, allowing for the dissociation of 3CT back to free changes, thereby reducing recombination and enhancing device performance. Our results point towards new design rules for artificial photo-conversion systems, enabling the suppression of electron-hole recombination, and also for OLEDs, avoiding the formation of triplet states and enhancing fluorescence efficiency.

Akshay Rao; Philip C. Y. Chow; Simon Gélinas; Cody W. Schlenker; David S. Ginger; Chang-Zhi Li; Hin-Lap Yip; Alex K-Y. Jen; Richard H. Friend

2013-03-12T23:59:59.000Z

308

E-Print Network 3.0 - average power semiconductor Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

externalexternal, and power, and power efficiencyefficiency 12;25 Optoelectronic Semiconductor... cavity light emitting diodesResonant cavity light emitting diodes...

309

D20: Interaction with Multifaceted Display Devices  

E-Print Network (OSTI)

, there has been a rapid progress in the new dis- play technologies, such as electronic ink and organic light-emitting diode (OLED) displays. These technolo- gies potentially allows to make displays with arbitrary pixel

Poupyrev, Ivan

310

R&D Program | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

DOE leadership and support spur advances in the efficacy and performance of light-emitting diode (LED) and organic LED (OLED) technologies-advances that might not otherwise be...

311

Design and synthesis of cyclometalated transition metal complexes as functional phosphorescent materials  

E-Print Network (OSTI)

Cyclometalated Ir(III) and Pt(II) compounds are among the most promising phosphorescent emitters for various applications, such as organic light emitting diodes (OLEDs), chemical sensors and bioimaging labels. This family ...

Liu, Shuang, Ph. D. Massachusetts Institute of Technology

2012-01-01T23:59:59.000Z

312

Conformation and Luminescence of Isolated Molecular Semiconductor Molecules  

E-Print Network (OSTI)

as the active layer in optoelectronic devices such as organic light-emitting diodes (OLEDs) and lasers. Unlike many conjugated polymers used in optoelectronic devices, these molecules are high in purity and well

Buratto, Steve

313

Compact and efficient method of RGB to RGBW data conversion for OLED microdisplays   

E-Print Network (OSTI)

Colour Electronic Information Displays (EIDs) typically consist of pixels that are made up of red, green and blue (RGB) subpixels. A recent technology, Organic Light Emitting Diode (OLED), offers the potential to create ...

Can, Chi

2012-06-25T23:59:59.000Z

314

State of Connecticut Summary of Reported Data From July 1, 2010...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

organizations that were redeemed for energy---related technologies, such as light---emitting diode (LED) lighting or electric vehicle charging stations. N2N generated a sense of...

315

E-Print Network 3.0 - advanced pixel architectures Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

62 4.2: Design of an Improved Pixel for a Polysilicon Active Matrix Organic Light Emitting Diode Display Summary: 4.2: Design of an Improved Pixel for a Polysilicon Active...

316

E-Print Network 3.0 - argon fluorides Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

of Mental Health Collection: Biology and Medicine 43 Top-emitting organic light-emitting diode using transparent conducting indium oxide layer fabricated by a two-step ion...

317

Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration  

DOE Patents (OSTI)

A light emitting package comprising a support hosting at least one light emitting diode. A light transmissive dome comprised of a silicone including a phosphor material positioned to receive light emitted by the diode. A glass cap overlies said dome.

Kolodin, Boris; Deshpande, Anirudha R

2014-09-16T23:59:59.000Z

318

Light-emitting devices based on ruthenium,,II...,,4,7-diphenyl-1, 10-phenanthroline...3 : Device response rate and efficiency  

E-Print Network (OSTI)

of a structure of transparent anode indium­ tin­oxide ITO glass/organic active layer s /metal. For high device materials have been developed extensively, ruthe- nium Ru -based charge transfer complexes are recently reII (L" )(L)2 at the cathode elec- trode. The generated species hop through the film and when

Shapira, Yoram

319

The Junction Diode Basic Operation  

E-Print Network (OSTI)

section of the diode. The junction is the dividing line between the n-type and p-type sides. Thermal biased diode. Figure 1(b) shows the diode with a battery connected across it. The polarity of the battery. Figure 1(c) shows the diode with the battery polarity reversed. The battery now tends to cancel out

Leach Jr.,W. Marshall

320

JOURNAL DE PHYSIQUE N ColloqueC6,supplkmentau Journal de Physique111,Vol. 1, dkembre 1991  

E-Print Network (OSTI)

as solarcell, photodetectorsand light emitting diodes which could benefit of the enhancementin the luminescence

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

INPUT/OUTPUT DEVICES AND INTERACTION TECHNIQUES Ken Hinckley, Microsoft Research  

E-Print Network (OSTI)

light emitting diodes), speakers, or tactile and force feedback devices (sometimes referred to as haptic

Jacob, Robert J.K.

322

A Genetic Algorithm Method for Multi-spot Diffuse Infrared Wireless Communications  

E-Print Network (OSTI)

optoelectronic devices, such as light emitting diodes (LEDs) and silicon detectors [2]. However there are two

Haddadi, Hamed

323

Simple gaze-contingent cues guide eye movements in a realistic driving simulator  

E-Print Network (OSTI)

implemented using two arrays of light-emitting diodes horizontally fitted below and above the simulated

324

"Did you pack your keys?" Smart Objects And Forgetfulness  

E-Print Network (OSTI)

of ten light-emitting diodes (LEDs), piezo and Radio Frequency Identification Reader (RFID) connected

Purver, Matthew

325

Nottingham Trent University, PhD Studentship Opportunities in Art and Design, October 2014 Research Group: Supervisor  

E-Print Network (OSTI)

incorporating light-emitting diode (LED) chips. However, the group now plans to develop an automated

Evans, Paul

326

Transport Equations for Semiconductors Prof. Dr. Ansgar Jungel  

E-Print Network (OSTI)

- cations have been invented; for instance, semiconductor lasers, solar cells, light-emitting diodes (LED

Jüngel, Ansgar

327

Probabilistic Phase Unwrapping for Time-of-Flight Cameras David Droeschel, Dirk Holz and Sven Behnke  

E-Print Network (OSTI)

. They employ an array of light emitting diodes (LEDs) that illuminate the environment with modulated near

Behnke, Sven

328

"Developing terahertz spectroscopy to be used for the study of bio-materials."  

E-Print Network (OSTI)

and photonic materials and devices including uncooled photodetectors, photovoltaics and light-emitting diodes

Acton, Scott

330

Low dimensionality spectral sensing for low cost material discrimination and identi cation  

E-Print Network (OSTI)

.6 Light Emitting Diodes as Detectors . . . . . . . . . . . . . . . . . . . . . . . . . . 32 3.7 Other

Bove Jr., V. Michael

331

DEPARTMENT OF CHEMICAL ENGINEERING DEPARTMENT OF MECHANICAL AND INDUSTRIAL ENGINEERING  

E-Print Network (OSTI)

-oxide-semiconductor field effect transistor (MOSFET) o Light emitting diodes (LEDs): principles and characteristics o

Massachusetts at Amherst, University of

332

The rapid progress of nanoscale science and technology challenges the optoelectronics community to develop ever smaller lasers and other optoelectronic devices compatible with  

E-Print Network (OSTI)

The miniaturization of optoelectronic devices such as light emitting diodes or semiconduc- tor lasers, is expected

Wu, Shin-Tson

333

TIFR Centre for Interdisciplinary Sciences, Narsingi, Hyderabad 500075  

E-Print Network (OSTI)

FE) nanowires has been demonstrated as capable of lighting a commercial light emitting diode. The template

Shyamasundar, R.K.

334

DOCTORAL CANDIDATE: Raju Shrestha DEGREE: Philosophiae Doctor (PhD)  

E-Print Network (OSTI)

and technologies: multi- camera (MCMSI), filter array (FAMSI), and LED (Light Emitting Diode) illumination (LEDMSI

Løw, Erik

335

Power Quality Improvements in Lighting Systems Mr. Ashish Shrivastava  

E-Print Network (OSTI)

from early incandescent lamps to present generation light emitting diodes (LEDs). Incandescent light

Kumar, M. Jagadesh

336

Synthesis and Characterization of Polymer Composites Containing Aligned Conducting Polymers and Carbon Nanotubes  

E-Print Network (OSTI)

Field effect transistor Ge Germanium HOMO Highest occupied molecular orbital I-V Current vs. Voltage ? Total thermal conductivity ?e Electronic contribution of thermal conductivity L Length xiv LC Liquid Crystal LED Light emitting diode LUMO... feasible for applications in organic light emitting diodes, photovoltaics6 and more recently, thermoelectric devices. Traditional inorganic semi-conductor materials like Bismuth (Bi), Te and Selenium (Se) deliver high thermoelectric power and deliver...

Manda, Swathi

2014-04-21T23:59:59.000Z

337

2011 Minerals Yearbook U.S. Department of the Interior  

E-Print Network (OSTI)

Cs) and optoelectronic devices [laser diodes, light-emitting diodes (lEDs), photodetectors, and solar cells]. Gallium

338

phys. stat. sol. (b) 216, 683 (1999) Subject classification: 68.55.Jk; S7.14; S7.15  

E-Print Network (OSTI)

such as window layers for UV light emitting diodes [1, 2], cladding layers for violet and UV laser diodes

Wetzel, Christian M.

339

Mechanistic Studies of Charge Injection from Metallic Electrodes into Organic Semiconductors Mediated by Ionic Functionalities: Final Report  

SciTech Connect

Metal-organic semiconductor interfaces are important because of their ubiquitous role in determining the performance of modern electronics such as organic light emitting diodes (OLEDs), fuel cells, batteries, field effect transistors (FETs), and organic solar cells. Interfaces between metal electrodes required for external wiring to the device and underlying organic structures directly affect the charge carrier injection/collection efficiency in organic-based electronic devices primarily due to the mismatch between energy levels in the metal and organic semiconductor. Environmentally stable and cost-effective electrode materials, such as aluminum and gold typically exhibit high potential barriers for charge carriers injection into organic devices leading to increased operational voltages in OLEDs and FETs and reduced charge extraction in photovoltaic devices. This leads to increased power consumption by the device, reduced overall efficiency, and decreased operational lifetime. These factors represent a significant obstacle for development of next generation of cheap and energy-efficient components based on organic semiconductors. It has been noticed that introduction of organic materials with conjugated backbone and ionic pendant groups known as conjugated poly- and oligoelectrolytes (CPEs and COEs), enables one to reduce the potential barriers at the metal-organic interface and achieve more efficient operation of a device, however exact mechanisms of the phenomenon have not been understood. The goal of this project was to delineate the function of organic semiconductors with ionic groups as electron injection layers. The research incorporated a multidisciplinary approach that encompassed the creation of new materials, novel processing techniques, examination of fundamental electronic properties and the incorporation of the resulting knowledgebase into development of novel organic electronic devices with increased efficiency, environmental stability, and reduced cost. During the execution of the project, main efforts were focused on the synthesis of new charge-bearing organic materials, such as CPEs and COEs, and block copolymers with neutral and ionic segments, studies of mechanisms responsible for the charge injection modulation in devices with ionic interlayers, and use of naturally occurring charged molecules for creation of enhanced devices. The studies allowed PIs to demonstrate the usefulness of the proposed approach for the improvement of operational parameters in model OLED and FET systems resulting in increased efficiency, decreased contact resistance, and possibility to use stable metals for fabrication of device electrodes. The successful proof-of-the-principle results potentially promise development of light-weight, low fabrication cost devices which can be used in consumer applications such as displays, solar cells, and printed electronic devices. Fundamental mechanisms responsible for the phenomena observed have been identified thus advancing the fundamental knowledgebase.

Nguyen, Thuc-Quyen [UCSB; Bazan, Guillermo [UCSB; Mikhailovsky, Alexander [UCSB

2014-04-15T23:59:59.000Z

340

Graphene-Silicon Schottky Diodes  

Science Journals Connector (OSTI)

Graphene-Silicon Schottky Diodes ... We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. ... The I–V characteristics measured at 100, 300, and 400 K indicate that temperature strongly influences the ideality factor of graphene–silicon Schottky diodes. ...

Chun-Chung Chen; Mehmet Aykol; Chia-Chi Chang; A. F. J. Levi; Stephen B. Cronin

2011-04-25T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Laser Diode Setup and Operation Eric Lochbrunner  

E-Print Network (OSTI)

Laser Diode Setup and Operation Eric Lochbrunner Diodes are a very important electrical of current. Laser diodes are complex semiconductors similar to regular diodes that convert an electrical of the diode to create laser activity. Light emitters are a key element in any fiber optic system

La Rosa, Andres H.

342

Appl Phys B (2010) 100: 917924 DOI 10.1007/s00340-010-4132-5  

E-Print Network (OSTI)

ranging from high- brightness light-emitting diodes and high-power laser diodes to solar cells. Trace Introduction Arsine (AsH3) and phosphine (PH3) are important process gases used in the production of III­V semiconductors via metal organic chemical vapor deposition (MOCVD) [1­4]. These compounds are used in devices

343

Organization  

NLE Websites -- All DOE Office Websites (Extended Search)

Organization Print Organization Print 2012-12 org chart A complete ALS organization chart (June 2013) is available in PDF. Appointed and elected members of advisory panels provide guidance to Berkeley Lab and ALS management in developing the ALS scientific and user programs. ALS Staff Photo staff photo thumb Click on the image to see a recent photo of ALS staff in front of the dome. The photo was taken on May 14, 2013. ALS Management and Advisory Team Steve Kevan, Deputy Division Director, Science Michael J. Banda, Deputy Division Director, Operations Robert W. Schoenlein, Senior Staff Scientist, Next Generation Light Source Initiative Janos Kirz, Scientific Advisor Paul Adams, Division Deputy for Biosciences ALS Scientific, Technical, and User Support Groups Accelerator Physics

344

Yuankun Cai  

Office of Scientific and Technical Information (OSTI)

Organic light emitting diodes (OLEDs) and OLED-based structurally Organic light emitting diodes (OLEDs) and OLED-based structurally integrated optical sensors by Yuankun Cai A dissertation submitted to the graduate faculty in partial fulfillment of the requirements for the degree of DOCTOR OF PHILOSOPHY Major: Condensed Matter Physics Program of Study Committee: Joseph Shinar, Major Professor Vikram Dalal Rana Biswas Curt Struck Edward Yu Iowa State University Ames, Iowa 2010 ii TABLE OF CONTENTS Chapter 1. An overview of OLED basics .................................................................................1 History of organic electroluminescence ............................................................................1 OLED applications............................................................................................................3

345

Emitron: microwave diode  

DOE Patents (OSTI)

The invention comprises a new class of device, driven by electron or other charged particle flow, for producing coherent microwaves by utilizing the interaction of electromagnetic waves with electron flow in diodes not requiring an external magnetic field. Anode and cathode surfaces are electrically charged with respect to one another by electron flow, for example caused by a Marx bank voltage source or by other charged particle flow, for example by a high energy charged particle beam. This produces an electric field which stimulates an emitted electron beam to flow in the anode-cathode region. The emitted electrons are accelerated by the electric field and coherent microwaves are produced by the three dimensional spatial and temporal interaction of the accelerated electrons with geometrically allowed microwave modes which results in the bunching of the electrons and the pumping of at least one dominant microwave mode.

Craig, G.D.; Pettibone, J.S.; Drobot, A.T.

1982-05-06T23:59:59.000Z

346

Categorical Exclusion Determinations: National Energy Technology Laboratory  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

30, 2013 30, 2013 CX-010824: Categorical Exclusion Determination Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07/30/2013 Location(s): New Jersey Offices(s): National Energy Technology Laboratory July 30, 2013 CX-010823: Categorical Exclusion Determination Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07/30/2013 Location(s): Pennsylvania Offices(s): National Energy Technology Laboratory July 30, 2013 CX-010822: Categorical Exclusion Determination Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07/30/2013 Location(s): Illinois Offices(s): National Energy Technology Laboratory July 30, 2013 CX-010821: Categorical Exclusion Determination

347

Categorical Exclusion Determinations: B3.6 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

19, 2010 19, 2010 CX-001310: Categorical Exclusion Determination Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Ewing) CX(s) Applied: B3.6 Date: 03/19/2010 Location(s): Ewing, New Jersey Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory March 19, 2010 CX-001309: Categorical Exclusion Determination Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Monroeville) CX(s) Applied: B3.6 Date: 03/19/2010 Location(s): Monroeville, Pennsylvania Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory March 19, 2010 CX-001307: Categorical Exclusion Determination Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Harmar) CX(s) Applied: B3.6

348

Categorical Exclusion (CX) Determinations By Date | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

July 30, 2013 July 30, 2013 CX-010824: Categorical Exclusion Determination Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07/30/2013 Location(s): New Jersey Offices(s): National Energy Technology Laboratory July 30, 2013 CX-010823: Categorical Exclusion Determination Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07/30/2013 Location(s): Pennsylvania Offices(s): National Energy Technology Laboratory July 30, 2013 CX-010822: Categorical Exclusion Determination Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07/30/2013 Location(s): Illinois Offices(s): National Energy Technology Laboratory July 30, 2013

349

Enhanced vbasis laser diode package  

DOE Patents (OSTI)

A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

2014-08-19T23:59:59.000Z

350

INPUT TO THE ANNUAL REPORT ( 2005-06) Period for which activities are to be reported: April 01, 2005 to March 31, 2006.  

E-Print Network (OSTI)

. Mazhari, 7. An Improved Solar Cell Circuit Model For Organic Solar Cells,"Solar Energy Materials and Solar on Recombination Profile in Bilayer Organic Light- Emitting Diode, Organic electronics, 6 (2005), pp. 229-236. B Cells, Volume 90, Issues 7-8, 5 May 2006, pp. 1021-1033, B. Mazhari 8. On the Estimation of Frequency

Jagannatham, Aditya K.

351

Key issues for mid–infrared emission  

Science Journals Connector (OSTI)

...the conduction band. The problems which limit light-emitting diode (LED) and laser operation by keeping efficiencies...the conduction band. The problems which limit light-emitting diode (LED) and laser operation by keeping e ciencies...

2001-01-01T23:59:59.000Z

352

Self-assembled lamellar MoS2, SnS2 and SiO2 semiconducting polymer nanocomposites  

Science Journals Connector (OSTI)

...demonstrated by integrating the nanocomposite films into light-emitting diode structures. The devices based on polymer-incorporated...demonstrated in a simple single-layer polymer light-emitting diode comprising the tricolour polymer blend interacted...

2007-01-01T23:59:59.000Z

353

Multi-Wavelength Visible Light Communication System Design Pankil Butala 1a  

E-Print Network (OSTI)

-converted light emitting diodes, or by filtering to iso- late the blue component from these sources. Multi efficient illumination devices called light emitting diodes (LED). The intensity of radiant flux emitted

Little, Thomas

354

Structural and Functional Modularity of the Orange Carotenoid Protein: Distinct Roles for the N- and C-Terminal Domains in Cyanobacterial Photoprotection  

Science Journals Connector (OSTI)

...chromatography|AEC, anion exchange chromatography|LED, light-emitting diode| INTRODUCTION The water-soluble orange carotenoid...OCPO was converted to OCPR using strong, blue light-emitting diode (LED) illumination (470 nm lambdamax; Philips...

Ryan L. Leverenz; Denis Jallet; Ming-De Li; Richard A. Mathies; Diana Kirilovsky; Cheryl A. Kerfeld

2014-01-07T23:59:59.000Z

355

Tomato GDSL1 Is Required for Cutin Deposition in the Fruit Cuticle  

Science Journals Connector (OSTI)

...immersion objective. Excitation was conducted by a light-emitting diode at 485 nm, and emission was collected between...immersion objective. Excitation was conducted by a light-emitting diode at 561 nm, and emission was collected between...

Anne-Laure Girard; Fabien Mounet; Martine Lemaire-Chamley; Cédric Gaillard; Khalil Elmorjani; Julien Vivancos; Jean-Luc Runavot; Bernard Quemener; Johann Petit; Véronique Germain; Christophe Rothan; Didier Marion; Bénédicte Bakan

2012-07-17T23:59:59.000Z

356

Genetic and Chemical Reductions in Protein Phosphatase Activity Alter Auxin Transport, Gravity Response, and Lateral Root Growth  

Science Journals Connector (OSTI)

...seedling was illuminated from behind with an infrared light-emitting diode. The Petri dish was oriented vertically and held...charge-coupled device camera, computer, infrared light-emitting diode, and software were purchased from the Plant Growth...

Aaron M. Rashotte; Alison DeLong; Gloria K. Muday

357

California's Energy Future - The View to 2050  

E-Print Network (OSTI)

Lawrence Livermore National Laboratory LDV Light-duty vehicles LED light emitting diode LWR Light water reactor NIF

2011-01-01T23:59:59.000Z

358

California’s Energy Future: The View to 2050 - Summary Report  

E-Print Network (OSTI)

Lawrence Livermore National Laboratory LDV Light-duty vehicles LED light emitting diode LWR Light water reactor NIF

Yang, Christopher

2011-01-01T23:59:59.000Z

359

A stereo vision system for support of planetary surface exploration  

E-Print Network (OSTI)

and for controlling the motion of the rover, using light emitting diodes on the payload cab of the rover

Pollefeys, Marc

360

Real-Time Spatio-Temporal Query Processing in Mobile Ad-Hoc Sensor Networks  

E-Print Network (OSTI)

that has multiple sensors (e.g., mo- tion sensors, acoustic sensors, infrared light emitting diodes, and pa

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Journal of Microscopy, Vol. 241, Pt 1 2011, pp. 101110 doi: 10.1111/j.1365-2818.2010.03413.x Received 8 December 2009; accepted 22 April 2010  

E-Print Network (OSTI)

instruments because they provide a good SNR even with low-power light sources such as light emitting diodes

Rieger, Bernd

362

Digital Object Identifier (DOI) 10.1007/s00138-002-0097-7 Machine Vision and Applications (2003) 14: 514 Machine Vision and  

E-Print Network (OSTI)

of the planetary terrain is computed, and for controlling the motion of the rover, using light emitting diodes

Pollefeys, Marc

363

Calibration, Terrain Reconstruction and Path Planning for a Planetary Exploration System  

E-Print Network (OSTI)

and localization of the rover. The lat- ter makes use of four Light Emitting Diodes on the rover payload cab

Pollefeys, Marc

364

INAUGURAL -DISSERTATION Erlangung der Doktorwurde  

E-Print Network (OSTI)

at specular points on the water surface. Two artificial light sources consisting of Light Emitting Diodes (LED

Jaehne, Bernd

365

ACM Reference Format Raskar, R., Nii, H., deDecker, B., Hashimoto, Y., Summet, J., Moore, D., Zhao, Y., Westhues, J., Dietz, P.,  

E-Print Network (OSTI)

appearance using the simplest possible optical devices ­ a light-emitting diode (LED) with a pas- sive binary

Columbia University

366

JOURNAL DE PHYSIQUE Colloque CS, supplment au n12, Tome 43, dcembre 1982 page C5-323  

E-Print Network (OSTI)

in optical communications. MOVPE growth of GaAs, P , the classical mate- rial for light emitting diodes (LED

Boyer, Edmond

367

Segmentation of Crystalline Lens in Photorefraction Video Mark Wendt and Shishir K. Shah  

E-Print Network (OSTI)

of infrared light emitting diodes (IR-LED) is located on this occlud- ing device. The system of video camera

368

welch@cs.unc.edu Gary Bishop  

E-Print Network (OSTI)

- mounted infrared light-emitting diodes that could be tracked in a one-cubic-meter volume. Beyond the Hi

Fuchs, Henry

369

Structural recovery of ion implanted ZnO nanowires G. Perillat-Merceroz,1, 2, a)  

E-Print Network (OSTI)

applications, ZnO nanowires are studied for making light- emitting diodes (LEDs) because of the advantages

Boyer, Edmond

370

Precise Multi-Spectral Dermatological Imaging David Delgado Gomez, Jens Michael Carstensen, Bjarne Kjr Ersbll  

E-Print Network (OSTI)

of an integrating sphere, light emitting diodes and a generic monochromatic camera. The system can collect up to 10

371

Impact of Lighting Requirements on VLC Systems J. Gancarz, H. Elgala, T.D.C. Little  

E-Print Network (OSTI)

Report No. 11-01-2013 Abstract Advances in Solid State Lighting (SSL) are enabling Light-Emitting Diodes

Little, Thomas

372

A Novel Neighbor Discovery Protocol for Ultraviolet Wireless Networks  

E-Print Network (OSTI)

in terms of building advanced low cost, low power and small size light emitting diodes (LEDs) that operate

Krishnamurthy, Srikanth

373

IEEE ENGINEERING IN MEDICINE AND BIOLOGY MAGAZINE MAY/JUNE 2006 570739-5175/06/$20.002006IEEE A Novel Method  

E-Print Network (OSTI)

consists of an infrared light-emitting diode (LED) and a photodiode that can be clamped to the ear lobes

374

Reduced Order Modeling and Control of Thin Film Growth in an HPCVD Reactor  

E-Print Network (OSTI)

circuits, transistors, and DRAM chips, as well as UV detectors and green and blue light emitting diodes

375

Reducing LED Costs Through Innovation  

Energy.gov (U.S. Department of Energy (DOE))

A Wisconsin-based company is developing an innovative way to reduce manufacturing costs of light-emitting diodes (LEDs).

376

Semiconductor Nanowires: What's Next?  

E-Print Network (OSTI)

sensors, lasers, light emitting diodes, and solar panels. Bysolar cells, and piezoelectric generators we discussed here, as well as sensors,

Yang, Peidong

2011-01-01T23:59:59.000Z

377

Research Frontiers Cutting-Edge Research  

E-Print Network (OSTI)

Shale Gas Fracturing with carbon dioxide instead of water. RESOURCE-ENG The Light Emitting Diode (LED

Takada, Shoji

378

Employment after UC Graduation: 2005 2007: Assistant Professor, Department of Electrical Engineering, California Polytechnic State  

E-Print Network (OSTI)

and Educational Activity on Gallium-Nitride (GaN) Lasers and Light Emitting Diodes (LEDs)" International Journal

Boolchand, Punit

379

Guided optical modes in randomly textured ZnO thin films imaged by near-field scanning optical K. Bittkau* and R. Carius  

E-Print Network (OSTI)

relevance. In particular, when designing thin-film solar cells and light emitting diodes LEDs , ran- domly

Peinke, Joachim

380

Thermal analysis of injectable, cellular-scale optoelectronics with pulsed power  

Science Journals Connector (OSTI)

...analysis|optoelectronics|light-emitting diode|scaling law| 1. Introduction...analysis for a single inorganic light-emitting diode in the tissue In the device...Thermal analysis for inorganic light-emitting diode arrays in the tissue The results...

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

An unsuccessful attempt to elicit orientation responses to linearly polarized light in hatchling loggerhead sea turtles (Caretta caretta)  

Science Journals Connector (OSTI)

...a steady course towards a light-emitting diode (LED) light source while...tethered in the tank with a light-emitting diode (LED) light source placed...a steady course towards a light-emitting diode (LED) light source while...

2011-01-01T23:59:59.000Z

382

Transgenic Nude Mouse with Ubiquitous Green Fluorescent Protein Expression as a Host for Human Tumors  

Science Journals Connector (OSTI)

...detected with a simple blue-light-emitting diode flashlight with a central...detected with a simple blue-light-emitting diode flashlight with a central...detected with a simple blue-light-emitting diode flashlight with a central...

Meng Yang; Jose Reynoso; Ping Jiang; Lingna Li; Abdool R. Moossa; Robert M. Hoffman

2004-12-01T23:59:59.000Z

383

Conducting polymer and hydrogenated amorphous silicon hybrid solar cells  

E-Print Network (OSTI)

November 2005 An organic-inorganic hybrid solar cell with a p-i-n stack structure has been investigated for their potential in electronic devices such as organic light emitting diodes OLEDs , solar cells, photode- tectorsConducting polymer and hydrogenated amorphous silicon hybrid solar cells Evan L. Williams

Schiff, Eric A.

384

Novel Amorphous-Si AMOLED Pixels with OLED-independent Turn-on Voltage and Driving Current  

E-Print Network (OSTI)

for the Science and Technology of Materials (PRISM), Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 Email: hekmat@princeton.edu In Active Matrix Organic Light Emitting Diode (AMOLED (patterned ITO, connected to the TFT drain), the organic (blanket) (Fig. 2(a)) and cathode (blanket) (Fig. 2

385

Photonics poster small  

NLE Websites -- All DOE Office Websites (Extended Search)

Capabilities Capabilities in Solid State Lighting Research and Development of Light-Emitting Diodes (LEDs) and Organic Light-Emitting Diodes (OLEDs) Research & Development Applications Optical Measurements National Center for Electron Microscopy (NCEM) Advanced Light Source (ALS) Research in LEDs Spin casting of OLED Growing Low Defect GaN Crystals to reduce the density of structural defects Minigoniometer viewing LED Optical design of device and packaging Local Lattice Constants and Electric Fields LEDs Research & Development of OLEDs Measurement of spectral power distribution and efficacy of OLED Design and fabrication of luminaires: LED porchlight Electric fields and lattice parameters are simultaneously recorded by the side band and autocorrelation of an electron

386

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1996. Two companies in  

E-Print Network (OSTI)

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar in research and development, specialty alloys, and other applications. Optoelectronic devices were used

387

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2006. One company in Utah  

E-Print Network (OSTI)

circuits. Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

388

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1998. Two companies in  

E-Print Network (OSTI)

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

389

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2000. Two companies in  

E-Print Network (OSTI)

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

390

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2008. One company in Utah  

E-Print Network (OSTI)

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

391

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2005. One company in Utah  

E-Print Network (OSTI)

circuits. Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

392

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2007. One company in Utah  

E-Print Network (OSTI)

circuits (ICs). Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

393

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2009. One company in Utah  

E-Print Network (OSTI)

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

394

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2010. One company in Utah  

E-Print Network (OSTI)

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

395

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1999. Two companies in  

E-Print Network (OSTI)

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

396

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1997. Two companies in  

E-Print Network (OSTI)

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

397

Photochemical deterioration of the organic/metal contacts in organic optoelectronic devices  

SciTech Connect

We study the effect of exposure to light on a wide range of organic/metal contacts that are commonly used in organic optoelectronic devices and found that irradiation by light in the visible and UV range results in a gradual deterioration in their electrical properties. This photo-induced contact degradation reduces both charge injection (i.e., from the metal to the organic layer) and charge extraction (i.e., from the organic layer to the metal). X-ray photoelectron spectroscopy (XPS) measurements reveal detectable changes in the interface characteristics after irradiation, indicating that the photo-degradation is chemical in nature. Changes in XPS characteristics after irradiation suggests a possible reduction in bonds associated with organic-metal complexes. Measurements of interfacial adhesion strength using the four-point flexure technique reveal a decrease in organic/metal adhesion in irradiated samples, consistent with a decrease in metal-organic bond density. The results shed the light on a new material degradation mechanism that appears to have a wide presence in organic/metal interfaces in general, and which likely plays a key role in limiting the stability of various organic optoelectronic devices such as organic light emitting devices, organic solar cells, and organic photo-detectors.

Wang Qi; Williams, Graeme; Aziz, Hany [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Tsui Ting [Department of Chemical Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

2012-09-15T23:59:59.000Z

398

Providing power for miniaturized medical implants: triplet sensitization of semiconductor surfaces  

Science Journals Connector (OSTI)

...is that the array can be tuned to the optical output of the excitation source, whether this be solar, laser, light-emitting diode, pulsed or white light. The organic dyes are non-toxic and alleviate the need to use a large surface area...

2013-01-01T23:59:59.000Z

399

Geckoprinting: assembly of microelectronic devices on unconventional surfaces by transfer printing with isolated gecko setal arrays  

Science Journals Connector (OSTI)

...H Nakajima, H Maeda, T Fukushima, T Aida, K Hata, and T Someya. 2009 Stretchable active-matrix organic light-emitting diode display using printable elastic conductors. Nat. Mater. 8, 494-499. ( doi:10.1038/nmat2459 ) 3 Park...

2014-01-01T23:59:59.000Z

400

CX-001152: Categorical Exclusion Determination  

Energy.gov (U.S. Department of Energy (DOE))

Roll-to-Roll Solution-Processable Small-Molecule Organic Light-Emitting Diodes (Niskayuna)CX(s) Applied: B3.6Date: 03/11/2010Location(s): Niskayuna, New YorkOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

AMOLED pixel driver circuits based on poly-Si TFTs: A comparison  

Science Journals Connector (OSTI)

In this paper, four different driver circuits for an active matrix organic light-emitting diode (AMOLED) pixel based on thin film transistor (TFT) technology are analyzed and compared. In particular, the comparison analyzed accuracy, driving speed, power ... Keywords: AMOLED, Digital circuit, Driver, Mixed design, TFT

Gaetano Palumbo; Melita Pennisi

2008-05-01T23:59:59.000Z

402

Chameleon: A Color-Adaptive Web Browser for Mobile OLED Displays  

Science Journals Connector (OSTI)

Displays based on organic light-emitting diode (OLED) technology are appearing on many mobile devices. Unlike liquid crystal displays (LCD), OLED displays consume dramatically different power for showing different colors. In particular, OLED displays ... Keywords: OLED display, web browser, color transformation, low power.

Mian Dong; Lin Zhong

2012-05-01T23:59:59.000Z

403

Research Highlights 2007-2008  

Energy.gov (U.S. Department of Energy (DOE))

Universal Display Corporation has successfully demonstrated an all phosphorescent white organic light emitting diode (WOLED™) with a record power efficacy of 45 lm/W at 1,000 cd/m2. This high-efficacy device was enabled by lowering the device operating voltage, increasing the outcoupling efficiency, and incorporating highly efficient phosphorescent emitters. (June 2007) Learn more.

404

Chem. Mater. 1994, 6, 2279-2287 2279 Chemical Vapor Deposition of Zinc from Diallyl Zinc  

E-Print Network (OSTI)

-containingmaterials such as the 11-VI compound semiconductors used in the manufac- ture of light emitting diodes and solar cell. The organic byproducts generated under CVD conditions are 1,5- hexadiene (76 mol %), 2-methyl-1,Cpentadiene (14 mol %), and propene (10 mol %); except for the pentadiene product, analogous hydrocarbons

Girolami, Gregory S.

405

LED Light Fixture Project FC1 Director's Conference Room: Life Cycle Cost and Break-even Analysis  

E-Print Network (OSTI)

LED Light Fixture Project ­ FC1 Director's Conference Room: Life Cycle Cost and Break-even Analysis sources. One of the emerging lighting technologies that facilities organizations are looking at are LEDs. A light-emitting diode (LED) is a solid-state lighting source that switches on instantly, is readily

Johnston, Daniel

406

PUBLISHED ONLINE: 17 OCTOBER 2010 | DOI: 10.1038/NMAT2879 Waterproof AlInGaP optoelectronics on  

E-Print Network (OSTI)

InGaP optoelectronics on stretchable substrates with applications in biomedicine and robotics Rak-Hwan Kim1 , Dae opportunities for optoelectronic devices. A ll established forms of inorganic light-emitting diodes (LEDs restricting the ways in which these devices can be used. Research in organic optoelectronic materials

Rogers, John A.

407

Published: April 21, 2011 r 2011 American Chemical Society 8956 dx.doi.org/10.1021/ja201129n |J. Am. Chem. Soc. 2011, 133, 89568960  

E-Print Network (OSTI)

" electrode for various optoelectronic devices such as organic light emitting diodes (OLEDs). It is known of such films. The impact of this study on the future development of optoelectronic devices is discussed. I. Introduction Tin-doped indium oxide (ITO) is routinely used as an electrode in various optoelectronic devices

Ismagilov, Rustem F.

408

CX-001326: Categorical Exclusion Determination  

Energy.gov (U.S. Department of Energy (DOE))

Development and Utilization of Host Materials for White Phosphorescent Organic Light-Emitting DiodesCX(s) Applied: B3.6Date: 03/17/2010Location(s): Rochester, New YorkOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

409

Let there be (a new kind of) light [NEWS  

Science Journals Connector (OSTI)

Recent events on the business front and advances in the lab could soon transform the way about lighting our homes and buildings. Significant strides in developing organic light-emitting diodes (OLEDs) may allow architects in the next few years to integrate ...

J. Boyd

2007-07-01T23:59:59.000Z

410

Tuning the Properties of Transparent Oxide Conductors. Dopant Ion Size and Electronic Structure Effects on CdO-Based  

E-Print Network (OSTI)

on the CdO- based TCO structural, electronic, and optical properties: (1) lattice parameters contract as key components in optoelectronic devices such as flat panel displays (FPDs), organic light-emitting diodes (OLEDs), photovoltaics, solar cells, optical waveguides, and energy-efficient windows.1

Medvedeva, Julia E.

411

Published: February 24, 2011 r 2011 American Chemical Society 566 dx.doi.org/10.1021/jz101740w |J. Phys. Chem. Lett. 2011, 2, 566571  

E-Print Network (OSTI)

Published: February 24, 2011 r 2011 American Chemical Society 566 dx.doi.org/10.1021/jz101740w |J, United States § NanoScience Technology Center and ^ Department of Physics, University of Central Florida organic light-emitting diodes,3 laser materials,4 and solar cells.5 Three kinds of excitation processes

Tretiak, Sergei

412

Computer Processing of Tunable Diode Laser Spectra  

Science Journals Connector (OSTI)

A computer-controlled tunable diode laser spectrometer and spectral analysis software are described. The three-channel system records simultaneously the transmission of a subject...

May, Randy D

1989-01-01T23:59:59.000Z

413

0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology  

SciTech Connect

Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures.

MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

2004-06-09T23:59:59.000Z

414

SciTech Connect: Broad Spectrum Photoelectrochemical Diodes for...  

Office of Scientific and Technical Information (OSTI)

Broad Spectrum Photoelectrochemical Diodes for Solar Hydrogen Generation Citation Details In-Document Search Title: Broad Spectrum Photoelectrochemical Diodes for Solar Hydrogen...

415

Energy Department Announces $4 Million Solicitation for Solid-State  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Announces $4 Million Solicitation for Solid-State Announces $4 Million Solicitation for Solid-State Lighting Research Energy Department Announces $4 Million Solicitation for Solid-State Lighting Research August 29, 2005 - 2:46pm Addthis Technology has Potential to Double Lighting Efficiency in U.S., Lowering Energy Bills WASHINGTON, DC - The U.S. Department of Energy (DOE) today announced a $4 million solicitation for research into solid-state lighting (SSL) that has the potential to create light with virtually no heat and double the efficiency of general lighting systems, saving energy costs for consumers and reducing lighting's environmental impact. Core SSL technologies include light-emitting diodes (LEDs), organic light-emitting diodes (OLEDs) and light-emitting polymers. "Solid-state lighting advances have the potential to greatly reduce energy

416

Energy Department Announces $4 Million Solicitation for Solid-State  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4 Million Solicitation for Solid-State 4 Million Solicitation for Solid-State Lighting Research Energy Department Announces $4 Million Solicitation for Solid-State Lighting Research August 29, 2005 - 2:46pm Addthis Technology has Potential to Double Lighting Efficiency in U.S., Lowering Energy Bills WASHINGTON, DC - The U.S. Department of Energy (DOE) today announced a $4 million solicitation for research into solid-state lighting (SSL) that has the potential to create light with virtually no heat and double the efficiency of general lighting systems, saving energy costs for consumers and reducing lighting's environmental impact. Core SSL technologies include light-emitting diodes (LEDs), organic light-emitting diodes (OLEDs) and light-emitting polymers. "Solid-state lighting advances have the potential to greatly reduce energy

417

Laser diode package with enhanced cooling  

DOE Patents (OSTI)

A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Deri, Robert J. (Pleasanton, CA); Kotovsky, Jack (Oakland, CA); Spadaccini, Christopher M. (Oakland, CA)

2012-06-12T23:59:59.000Z

418

Laser diode package with enhanced cooling  

DOE Patents (OSTI)

A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Deri, Robert J.; Kotovsky, Jack; Spadaccini, Christopher M.

2012-06-26T23:59:59.000Z

419

Laser diode package with enhanced cooling  

DOE Patents (OSTI)

A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Deri, Robert J. (Pleasanton, CA); Kotovsky, Jack (Oakland, CA); Spadaccini, Christopher M. (Oakland, CA)

2011-09-13T23:59:59.000Z

420

Light emitting device comprising phosphorescent materials for white light generation  

DOE Patents (OSTI)

The present invention relates to phosphors for energy downconversion of high energy light to generate a broadband light spectrum, which emit light of different emission wavelengths.

Thompson, Mark E.; Dapkus, P. Daniel

2014-07-22T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Electrodes mitigating effects of defects in organic electronic devices  

DOE Patents (OSTI)

A compound electrode for organic electronic devices comprises a thin first layer of a first electrically conducting material and a second electrically conducting material disposed on the first layer. In one embodiment, the second electrically conducting material is formed into a plurality of elongated members. In another embodiment, the second material is formed into a second layer. The elongated members or the second layer has a thickness greater than that of the first layer. The second layer is separated from the first layer by a conducting material having conductivity less than at least the material of the first layer. The compound electrode is capable of mitigating adverse effects of defects, such as short circuits, in the construction of the organic electronic devices, and can be included in light-emitting or photovoltaic devices.

Heller, Christian Maria Anton (Albany, NY)

2008-05-06T23:59:59.000Z

422

An Brief Overview Of Using LEDs In Lab  

E-Print Network (OSTI)

Diodes · A Light-Emitting Diode (LED) is a special type of diode that emits photons (light) when current ­ Forward biased Diode Operation 0 V 5 V Current ~0 high (too high)5 V 0 V I anode cathode #12;3 Light-Emitting

Baas, Bevan

423

Advanced laser diodes for sensing applications  

SciTech Connect

The authors have developed diode lasers for short pulse duration and high peak pulse power in the 0.01--100.0 m pulsewidth regime. A primary goal of the program was producing up to 10 W while maintaining good far-field beam quality and ease of manufacturability for low cost. High peak power, 17 W, picosecond pulses have been achieved by gain switching of flared geometry waveguide lasers and amplifiers. Such high powers area world record for this type of diode laser. The light emission pattern from diode lasers is of critical importance for sensing systems such as range finding and chemical detection. They have developed a new integrated optical beam transformer producing rib-waveguide diode lasers with a symmetric, low divergence, output beam and increased upper power limits for irreversible facet damage.

VAWTER,GREGORY A.; MAR,ALAN; CHOW,WENG W.; ALLERMAN,ANDREW A.

2000-01-01T23:59:59.000Z

424

Impedance characteristics of multistage ion diodes  

SciTech Connect

We further develop a theory of multistage diodes that includes the possibility of emission of ions in the final stage. The exact solutions are extremely cumbersome and are not practical for most applications. We have developed approximate solutions that are very accurate, require no integrations, and may be rapidly calculated using a simple iterative scheme. These solutions for the total current as a function of voltage are used in time-dependent modeling of a two-stage diode.

Desjarlais, M.

1994-09-01T23:59:59.000Z

425

Bypass diode for a solar cell  

DOE Patents (OSTI)

Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

Rim, Seung Bum (Palo Alto, CA); Kim, Taeseok (San Jose, CA); Smith, David D. (Campbell, CA); Cousins, Peter J. (Menlo Park, CA)

2012-03-13T23:59:59.000Z

426

Tunable, diode side-pumped Er:YAG laser  

DOE Patents (OSTI)

A discrete-element Er:YAG laser, side pumped by a 220 Watt peak-power InGaAs diode array, generates >500 mWatts at 2.94 {micro}m, and is tunable over a 6 nm range near about 2.936 {micro}m. The oscillator is a plano-concave resonator consisting of a concave high reflector, a flat output coupler, a Er:YAG crystal and a YAG intracavity etalon, which serves as the tuning element. The cavity length is variable from 3 cm to 4 cm. The oscillator uses total internal reflection in the Er:YAG crystal to allow efficient coupling of the diode emission into the resonating modes of the oscillator. With the tuning element removed, the oscillator produces up to 1.3 Watts of average power at 2.94 {micro}m. The duty factor of the laser is 6.5% and the repetition rate is variable up to 1 kHz. This laser is useful for tuning to an atmospheric transmission window at 2.935 {micro}m (air wavelength). The laser is also useful as a spectroscopic tool because it can access several infrared water vapor transitions, as well as transitions in organic compounds. Other uses include medical applications (e.g., for tissue ablation and uses with fiber optic laser scalpels) and as part of industrial effluent monitoring systems. 4 figs.

Hamilton, C.E.; Furu, L.H.

1997-04-22T23:59:59.000Z

427

Tunable, diode side-pumped Er: YAG laser  

DOE Patents (OSTI)

A discrete-element Er:YAG laser, side pumped by a 220 Watt peak-power InGaAs diode array, generates >500 mWatts at 2.94 .mu.m, and is tunable over a 6 nm range near about 2.936 .mu.m. The oscillator is a plano-concave resonator consisting of a concave high reflector, a flat output coupler, a Er:YAG crystal and a YAG intracavity etalon, which serves as the tuning element. The cavity length is variable from 3 cm to 4 cm. The oscillator uses total internal reflection in the Er:YAG crystal to allow efficient coupling of the diode emission into the resonating modes of the oscillator. With the tuning element removed, the oscillator produces up to 1.3 Watts of average power at 2.94 .mu.m. The duty factor of the laser is 6.5% and the repetition rate is variable up to 1 kHz. This laser is useful for tuning to an atmospheric transmission window at 2.935 .mu.m (air wavelength). The laser is also useful as a spectroscopic tool because it can access several infrared water vapor transitions, as well as transitions in organic compounds. Other uses include medical applications (e.g., for tissue ablation and uses with fiber optic laser scalpels) and as part of industrial effluent monitoring systems.

Hamilton, Charles E. (Bellevue, WA); Furu, Laurence H. (Modesto, CA)

1997-01-01T23:59:59.000Z

428

Deterministic polarization chaos from a laser diode  

E-Print Network (OSTI)

Fifty years after the invention of the laser diode and fourty years after the report of the butterfly effect - i.e. the unpredictability of deterministic chaos, it is said that a laser diode behaves like a damped nonlinear oscillator. Hence no chaos can be generated unless with additional forcing or parameter modulation. Here we report the first counter-example of a free-running laser diode generating chaos. The underlying physics is a nonlinear coupling between two elliptically polarized modes in a vertical-cavity surface-emitting laser. We identify chaos in experimental time-series and show theoretically the bifurcations leading to single- and double-scroll attractors with characteristics similar to Lorenz chaos. The reported polarization chaos resembles at first sight a noise-driven mode hopping but shows opposite statistical properties. Our findings open up new research areas that combine the high speed performances of microcavity lasers with controllable and integrated sources of optical chaos.

Martin Virte; Krassimir Panajotov; Hugo Thienpont; Marc Sciamanna

2014-07-22T23:59:59.000Z

429

Effects of temperature on laser diode ignition  

Science Journals Connector (OSTI)

In this paper, the effects of temperature on laser diode ignition and the resulting consequences were discussed in detail through theoretical analysis, experiments and numerical calculations. The results indicated that the output power of laser diode decreases and the wavelength of laser redshifts with elevated working temperature under a certain condition. The threshold conditions of ignition for powders are easily satisfied with increase in ambient temperature. While the temperature reaches a high enough level, ignition can occur and also the self-combustion or thermal induced explosion can do, even if laser power is very low. Therefore, it is of great importance to carefully control the working temperature of laser diode and the ambient temperature of powder system, and in the meanwhile, to install necessary insurance apparatus in order to ensure the normal and safe operation of the ignition system.

Shi-Biao Xiang; Xu Xiang; Chang-Gen Feng

2009-01-01T23:59:59.000Z

430

Phase-change radiative thermal diode  

SciTech Connect

A thermal diode transports heat mainly in one preferential direction rather than in the opposite direction. This behavior is generally due to the non-linear dependence of certain physical properties with respect to the temperature. Here we introduce a radiative thermal diode which rectifies heat transport thanks to the phase transitions of materials. Rectification coefficients greater than 70% and up to 90% are shown, even for small temperature differences. This result could have important applications in the development of future contactless thermal circuits or in the conception of radiative coatings for thermal management.

Ben-Abdallah, Philippe, E-mail: pba@institutoptique.fr [Laboratoire Charles Fabry, UMR 8501, Institut d'Optique, CNRS, Université Paris-Sud 11, 2, Avenue Augustin Fresnel, 91127 Palaiseau Cedex (France)] [Laboratoire Charles Fabry, UMR 8501, Institut d'Optique, CNRS, Université Paris-Sud 11, 2, Avenue Augustin Fresnel, 91127 Palaiseau Cedex (France); Biehs, Svend-Age, E-mail: s.age.biehs@uni-oldenburg.de [Institut für Physik, Carl von Ossietzky Universität, D-26111 Oldenburg (Germany)] [Institut für Physik, Carl von Ossietzky Universität, D-26111 Oldenburg (Germany)

2013-11-04T23:59:59.000Z

431

Integrated injection-locked semiconductor diode laser  

DOE Patents (OSTI)

A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet. 18 figures.

Hadley, G.R.; Hohimer, J.P.; Owyoung, A.

1991-02-19T23:59:59.000Z

432

Integrated injection-locked semiconductor diode laser  

DOE Patents (OSTI)

A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.

Hadley, G. Ronald (Albuquerque, NM); Hohimer, John P. (Albuquerque, NM); Owyoung, Adelbert (Albuquerque, NM)

1991-01-01T23:59:59.000Z

433

E-Print Network 3.0 - active fabry-perot semiconductor Sample...  

NLE Websites -- All DOE Office Websites (Extended Search)

Physics 45 The Laser DiodeThe Laser Diode Jason HillJason Hill Summary: to a Light Emitting Diode Active medium is a semiconductor pActive medium is a semiconductor p--n...

434

The Influence of Photoperiod History on Circadian Response to Light  

E-Print Network (OSTI)

fluorescent bulbs (F4T5) (105 µW/cm 2 ) for the photophase and narrowband light-emitting diodes (LEDs)fluorescent bulbs (F4T5) (105 µW/cm2) while dark phases (scotophases) were dimly illuminated by narrowband light-emitting diodes (LEDs)fluorescent bulbs (F4T5) (105 µW/cm2) while dark phases (scotophases) were dimly illuminated by narrowband light-emitting diodes (LEDs)

Glickman, Gena Lynne

435

In the OSTI Collections: LEDs | OSTI, US Dept of Energy, Office of  

Office of Scientific and Technical Information (OSTI)

LEDs LEDs User experiences Light-emitting diodes and phosphors Electronics to drive light-emitting diodes Getting the light out of the diode and onto where it's wanted Environmental effects References Research Organizations Patent Assignees Reports Available through OSTI's SciTech Connect Reports Available through OSTI's DOepatents Additional References As "efficiency" is often defined for technology, the efficiency of anything that changes energy into a usable form for some purpose is the fraction of the changed energy that actually winds up in the intended usable form. A heat engine, for instance, takes energy from some heat source and turns some fraction of it into mechanical energy. The maximum possible efficiency for a heat engine that operates in cycles between the

436

Uniform insulation applied-B ion diode  

DOE Patents (OSTI)

An applied-B field extraction ion diode has uniform insulation over an anode surface for increased efficiency. When the uniform insulation is accomplished with anode coils, and a charge-exchange foil is properly placed, the ions may be focused at a point on the z axis.

Seidel, David B. (Albuquerque, NM); Slutz, Stephen A. (Albuquerque, NM)

1988-01-01T23:59:59.000Z

437

What's New - U.S. Energy Information Administration (EIA)  

Gasoline and Diesel Fuel Update (EIA)

in efficiency and quality Nov 4, 2014 Improvements in lighting technology for light-emitting diode (LED) bulbs have increased lighting efficiency, or efficacy, as well as color...

438

Federal Register Vol. 76 No. 44, 12422-12505 - Energy Conservation...  

Energy Savers (EERE)

for High-Intensity Discharge Lamps; Supplemental Notice of Proposed Rulemaking 2014-05-16 Issuance: Test Procedures for Integrated Light-Emitting Diode Lamps; Supplemental...

439

Feature issue introduction: quantum dots for photonic applications  

Science Journals Connector (OSTI)

Quantum dots (QDs) are semiconductor nanocrystals with peculiar optoelectronic properties. Their wide application in light-emitting diodes, solar cells, and the medical and defense...

Lee, Kwang-Sup; Prasad, Paras N; Huyet, Guillaume; Tan, Chee Hing

2012-01-01T23:59:59.000Z

440

Sandia National Laboratories: 2011 Archives  

NLE Websites -- All DOE Office Websites (Extended Search)

Council. Optical performance of top-down fabricated InGaNGaN nanored light emitting diode arrays November 30, 2011 EFRC researchers from Sandia have recently published...

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Sandia National Laboratories: (Lighting and) Solid-State Lighting...  

NLE Websites -- All DOE Office Websites (Extended Search)

on the third and upcoming revolution (illumination). Topics cover the basics of light-emitting diode (LED) operation; a 200-year history of lighting technology; the importance of...

442

Sandia National Laboratories: News / Highlights  

NLE Websites -- All DOE Office Websites (Extended Search)

of competing radiative and nonradiative processes in current-generation, planar light-emitting diode architectures; understanding of the electrical, optical, and structural...

443

Sandia National Laboratories: Copy of News / Highlights  

NLE Websites -- All DOE Office Websites (Extended Search)

of competing radiative and nonradiative processes in current-generation, planar light-emitting diode architectures; understanding of the electrical, optical, and structural...

444

Sandia National Laboratories: Videos  

NLE Websites -- All DOE Office Websites (Extended Search)

on the third and upcoming revolution (illumination). Topics cover the basics of light-emitting diode (LED) operation; a 200-year history of lighting technology; the importance of...

445

SANDIA REPORT SAND93-1076  

Office of Scientific and Technical Information (OSTI)

cycles persecond Km kilometer, one thousand meters LAN local areanetwork LED light-emitting diode Mbps megabps, one million bits per second MHz megahertz, one million cycles per...

446

Sandia National Laboratories: 2012 Archives  

NLE Websites -- All DOE Office Websites (Extended Search)

downloaded article in January 2012. Abstract: Light-emitting diodes are becoming the next-generation light source because of their prominent benefits in energy efficiency,...

447

New reversing design method for LED uniform illumination  

Science Journals Connector (OSTI)

In light-emitting diode (LED) applications, it is becoming a big issue that how to optimize light intensity distribution curve (LIDC) and design corresponding optical component to...

Wang, Kai; Wu, Dan; Qin, Zong; Chen, Fei; Luo, Xiaobing; Liu, Sheng

2011-01-01T23:59:59.000Z

448

Heat dissipation performance of a high-brightness LED package assembly using high-thermal conductivity filler  

Science Journals Connector (OSTI)

This paper presents a thermal analysis and experimental validation of natural convective heat transfer of a high-brightness light-emitting diode (LED) package assembly. The substrate...

Yung, K C; Liem, H; Choy, H S

2013-01-01T23:59:59.000Z

449

Excellent color rendering indexes of multi-package white LEDs  

Science Journals Connector (OSTI)

This study introduces multi-package white light-emitting diodes (LEDs) system with the ability to realize high luminous efficacy and an excellent color rendering index (CRI,...

Oh, Ji Hye; Yang, Su Ji; Sung, Yeon-Goog; Do, Y R

2012-01-01T23:59:59.000Z

450

Center for Energy Nanoscience at USC  

NLE Websites -- All DOE Office Websites (Extended Search)

LED Nanowire LEDs GaN based light emitting diodes (LEDs) are a key technology for high brightness LEDs. Although already successful commercially, fundamental physical and device...

451

Minimal Viewing Distance Calculation in LED Display Panels  

Science Journals Connector (OSTI)

Light-emitting diode (LED) display panels have received more attention recently. These panels usually are placed in public places such as streets, ...

Nazeran Motlagh, A Ali; Hashemi, B Massoud Reza

2010-01-01T23:59:59.000Z

452

High-Throughput, High-Precision Hot Testing Tool for High-Brightness...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Light-Emitting Diode Testing More Documents & Publications 2014 Solid-State Lighting Project Portfolio A Practical Primer to LED Technology LED Color Characteristics...

453

Accurate, fast, and robust centre localisation for images of semiconductor components  

E-Print Network (OSTI)

for the precise centre localisation of circular objects, e.g. p-electrodes of light-emitting diodes. The first

454

Camera that takes pictures of aircraft and ground vehicle tires can save lives  

E-Print Network (OSTI)

will turn on a noticeable light-emitting diode in the car. The driver will be aware of the damaged tire

Wiseman, Yair

455

Download  

Science Journals Connector (OSTI)

Oct 11, 1985 ... The light-emitting diode (LED) photo- metric detector was based on the circuit designed by. Betteridge et al. (1978). The Hewlett-Packard near- ...

2000-02-24T23:59:59.000Z

456

Photosynthetic performance of benthic microbial mats in Lake Hoare ...  

Science Journals Connector (OSTI)

Light-emitting diode. PAR. Photosynthetically active radiation (mol quanta m22 s21). PSI and PSII. Photosystem complex I and II. rETRmax. Maximum relative ...

2006-06-12T23:59:59.000Z

457

Direct observation of biomixing by vertically migrating zooplankton  

Science Journals Connector (OSTI)

Light-emitting diode. (LED) panels (maximum 4560 lux; 450–760 nm) were placed above and below the experimental tank to stimulate vertical swimming (

2014-03-06T23:59:59.000Z

458

Plant-wide Systems | Department of Energy  

Energy Savers (EERE)

Outdoor Area Lighting LED T8 Replacement Lamps Demonstration Assessment of Light-Emitting Diode (LED) Freezer Case Lighting 2010 U.S. Lighting Market Characterization Building...

459

Download Full-text PDF  

Science Journals Connector (OSTI)

a blue light-emitting diode (Nichia Chemical Industries,. NLPB500, maximum emission at 460 nm, 30 nm bandwidth) with an incorporated iris and a collimating

kbailey@ultra1

2002-01-03T23:59:59.000Z

460

Is there a future for semiconducting silicides? (invited)  

Science Journals Connector (OSTI)

Keywords: &bgr;FeSi2, Ru2Si3, electroluminescence, ion beam synthesis, semiconducting silicides, silicon-based light-emitting diode

Karen J. Reeson; Jane Sharpe; Milton Harry; Daniel Leong; Colin McKinty; Adrian Kewell; Manon Lourenço; Yan Ling Chen; G. Shao; Kevin P. Homewood

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

EERE FY 2008-2012 Budget: Weatherization and Intergovernmental...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

for energy savings covering 153 million square feet. Install 92,488 light-emitting diode (LED) traffic signals. Purchase or convert 6,434 alternative fuel vehicles....

462

Chapter 6, Residential Lighting Evaluation Protocol: The Uniform...  

Office of Environmental Management (EM)

STAR lighting fixtures. More recently, programs are introducing solid-state light-emitting diode (LED) lamps. The future of savings claims from residential lighting programs is...

463

Spin hall effect in paramagnetic thin films  

E-Print Network (OSTI)

the principle of Light Emitting Diode, but changed the design to a coplanar structure with two p-n junctions. A Light-Emitting Diode [27] consists of a chip of semiconductor materials doped with impurities to create a p-n junction. When the LED is forward... the principle of Light Emitting Diode, but changed the design to a coplanar structure with two p-n junctions. A Light-Emitting Diode [27] consists of a chip of semiconductor materials doped with impurities to create a p-n junction. When the LED is forward...

Xu, Huachun

2009-05-15T23:59:59.000Z

464

Download Full-text PDF  

Science Journals Connector (OSTI)

Fe addition were prepared as control experiments. The bottles were incubated in a laboratory incubator with artificial light (white light-emitting diode). The light.

2014-04-03T23:59:59.000Z

465

MOntage Builders NORTHERN FOREST NORTHERN FOREST MOntage  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

of light: incandescent (as a control), compact florescent lighting (CFL), and light emitting diode (LED). LIGHTING AND APPLIANCES Comparison P oint LED CFL Incandescent Watt B...

466

Download Full-text PDF  

Science Journals Connector (OSTI)

turnover flash given by a blue light-emitting diode (455 6. 2 nm). The fluorescence rise was analyzed using FIRe-. WORX software (Copyright E 2007 Audrey B.

2010-08-17T23:59:59.000Z

467

www.aslo.org  

Science Journals Connector (OSTI)

Oct 11, 1985 ... The light-emitting diode (LED) photo- metric detector was based on the circuit designed by. Betteridge et al. (1978). The Hewlett-Packard near- ...

2000-02-24T23:59:59.000Z

468

E-Print Network 3.0 - advanced microstructural study Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

Collection: Engineering 15 Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with Summary: microstructures on the light extraction efficiency...

469

2014 Building America House Simulation Protocols  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Laboratory LED light-emitting diode MAT monthly average temperature MEL miscellaneous electric load NCTH New Construction Test Home NREL National Renewable Energy Laboratory NREMD...

470

LED Illumination with a Condensing Sphere  

Science Journals Connector (OSTI)

Novel compact and efficient illumination systems are described which comprise dielectric spheres with planar cuts at the edges and imbedded light emitting diodes. The rays are...

Chi, Wanli; George, Nicholas

471

Revolution Now: The Future Arrives for Four Clean Energy Technologies...  

Energy Savers (EERE)

that are here today: onshore wind power, polysilicon photovoltaic (PV) modules, light-emitting diodes (LEDs), and electric vehicles (EVs). That study showed how dramatic...

472

Unraveling the mystery of quantum-dot blinking  

NLE Websites -- All DOE Office Websites (Extended Search)

mystery of quantum-dot blinking Research enhances single particle tracking, allows novel light-emitting diodes, and boosts development of new solar cells. April 3, 2012 Artists...

473

E-Print Network 3.0 - air-processed polymer-fullerene bulk Sample...  

NLE Websites -- All DOE Office Websites (Extended Search)

are currently seen as attractive materials for optoelectronic applications such as light-emitting diodes and solar cells. Excitonic processes play Summary: phase of bulk...

474

UCSB researchers uncover fundamental limits on optical transparency...  

NLE Websites -- All DOE Office Websites (Extended Search)

are used as transparent contacts in a wide range of optoelectronic devices, such as solar cells, light-emitting diodes, and LCD touch screens. These materials can conduct...

475

U.S. Energy Information Administration (EIA) - Sector  

Annual Energy Outlook 2012 (EIA)

displays capture a growing share of the market and overall stock efficiency improves as light-emitting diodes (LEDs) displace cold cathode fluorescent lamps as a major...

476

Center for Energy Nanoscience at USC  

NLE Websites -- All DOE Office Websites (Extended Search)

The Center for Energy Nanoscience performs research to create low cost, high efficiency solar cells and light emitting diodes (LEDs) by using semiconductor nanotechnology and...

477

Sandia National Laboratories: Sandia Develops a Synthesis of...  

NLE Websites -- All DOE Office Websites (Extended Search)

efficacy of radiation * high quantum yield under blue excitation * LED * light-emitting diode * low scattering losses * low thermal quenching * photostability * QD * quantum...

478

Sandia National Laboratories: Genetic Algorithm for Innovative...  

NLE Websites -- All DOE Office Websites (Extended Search)

semiconductor device design and optimization. Tagged with: III-V Nitride * light-emitting diode * Solid-State Lighting * solid-state lighting science * SSLS EFRC Comments are...

479

azo dye polymer: Topics by E-print Network  

NLE Websites -- All DOE Office Websites (Extended Search)

alignment 10 Solvent-enhanced dye diffusion in polymer thin films for polymer light-emitting diode application Engineering Websites Summary: Solvent-enhanced dye diffusion in...

480

Curt Mitchke Director EES-ABQ Air Products  

NLE Websites -- All DOE Office Websites (Extended Search)

and components for the semiconductor, film transistor, photovoltaic, and light-emitting- diode industries. For the employees at the SS&TP facility, Air Products brings the...

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Electricity | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

LED Lighting "Droop" Despite being cool, ultra-efficient and long lasting, the light-emitting diode (LED) faces a problem called "efficiency droop." New findings from simulations...

482

Energy Implications of Solid-State Lighting Technology  

Science Journals Connector (OSTI)

The efficient yet highly controllable generation of light can be accomplished by light-emitting diodes that can have a 20 times greater efficiency than incandescent light sources....

Schubert, E Fred; Kim, Jong Kyu

483

Biomass Cookstoves Technical Meeting: Summary Report  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

and Renewable Energy EPA Environmental Protection Agency GHG Greenhouse gas IAP Indoor air pollution IAQ Indoor air quality KPT Kitchen Performance Test LED Light-emitting diode...

484

E-Print Network 3.0 - apd light readout Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Photonics Conference Summary: Improved Light Output of Photonic Crystal Light Emitting Diode Fabricated by Anodized Aluminum Oxide Nano... an equivalent circuit model for...

485

E-Print Network 3.0 - aluminum garnet yag Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Collection: Materials Science 49 A nearly ideal phosphor-converted white light-emitting diode Steven C. Allen and Andrew J. Steckla Summary: aluminum garnet YAG :Ce powder...

486

E-Print Network 3.0 - aligned zno nanorods Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

of Wisconsin at Madison Collection: Materials Science 88 ZnO Microcrystals for Light Emitting Diode and Photovoltaic Applications with Integration on Flexible Substrates Summary:...

487

Nanoscale engineering boosts performance of quantum dot light...  

NLE Websites -- All DOE Office Websites (Extended Search)

engineering boosts performance of quantum dot light emitting diodes Quantum dots are nano-sized semiconductor particles whose emission color can be tuned by simply changing...

488

Low-power communication with a photonic heat pump  

Science Journals Connector (OSTI)

An optical communication channel is constructed using a heated thermo-electrically pumped, high efficiency infrared light-emitting diode (LED). In these devices, electro-luminescent...

Huang, Duanni; Santhanam, Parthiban; Ram, Rajeev J

2014-01-01T23:59:59.000Z

489

A High-Speed LED Driver That Sweeps Out the Remaining Carriers for Visible Light Communications  

Science Journals Connector (OSTI)

The modulation speed of light-emitting diodes (LEDs) must be increased to improve the speed, increase the bandwidth, and miniaturize the hardware of visible light communication (VLC)...

Kishi, Toshiki; Tanaka, Hiroyuki; Umeda, Yohtaro; Takyu, Osamu

2013-01-01T23:59:59.000Z

490

Microsoft Word - oleds0805.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

Organic Light Emitting Diodes (OLEDs) Organic Light Emitting Diodes (OLEDs) for General Illumination Update 2002 A A N N O O I I D D A A T T E E C C H H N N O O L L O O G G Y Y R R O O A A D D M M A A P P Date August, 2002 Sponsored by: Optoelectronics Industry Development Association (OIDA) Department of Energy - Office of Building Technology, State and Community Programs Edited by: Milan Stolka, Consultant Published by: 1133 Connecticut Avenue, NW #600 Washington, DC 20036 Ph: 202-785-4426 ♦ Fax: 202-785-4428 Web: http://www.OIDA.org OIDA Member Use Only  2002 OIDA Optoelectronics Industry Development Association All data contained in this report is proprietary to OIDA and may not be distributed in either original or reproduced form to anyone outside the client's internal organization within five years of the report

491

Lighting Group: Sources and Ballasts: OLED Cathodes  

NLE Websites -- All DOE Office Websites (Extended Search)

OLED Cathodes OLED Cathodes Development of New Cathodes for OLED's Objective The objective of this project is to develop improved cathodes for use in organic light emitting diodes (OLEDs). Approach A major challenge for organic light emitting diode (OLED) technology is to improve electron injection into the organic electroluminescent layer, which limits the efficiency of the device and the luminous flux per unit area. This project aims at overcoming such barriers by developing “structured cathodes” based on functional materials (nanotubes and nanoclusters) with characteristic size smaller than the optical wavelength. The incorporation of such nanostructured cathodes in OLEDs can significantly improve device efficiency by lowering operating voltage, and increase device stability and light extraction.

492

Cathode applications to high-current diodes  

SciTech Connect

A principal limitation of pulse length for high electron current density diodes is the gap closure due to plasma propagation. This closure is due to plasma formed on the cathode and anode in the process of explosive field emission created by the required high field stresses of the high current diode. Experimental results of high current density T-F'' cathode and a plasma cathode will be presented. Current densities of greater than 300 A/cm2 were obtained for pulse lengths of 3 {mu}sec. Typical closure velocities were less than 2 mm/usec compared with the typical 2 cm/{mu}sec for explosive emission cathodes. 4 refs., 7 figs.

Pincosy, P.A.; Poulsen, P.; Greenwood, D.

1990-05-31T23:59:59.000Z

493

Nanoelectronic devices—resonant tunnelling diodes  

Science Journals Connector (OSTI)

This paper reports that InAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm2 has been obtained for diodes with AlAs barriers of ten monolayers and an In0.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.

Zhang Yang; Zeng Yi-Ping; Ma Long; Wang Bao-Qiang; Zhu Zhan-Ping; Wang Liang-Chen; Yang Fu-Hua

2006-01-01T23:59:59.000Z

494

Infrared photoemitting diode having reduced work function  

DOE Patents (OSTI)

In electro-optical detectors which include as elements a photoemitting photocathode and anode, a photoemitting diode is fabricated which lowers the diode's work function, thus reducing the cooling requirement typically needed for this type of device. The work function is reduced by sandwiching between the photocathode and anode a liquid meidum of the formula NR/sub 3/ and having an electron affinity for the electrons of the photocathode, which liquid medium permits free electrons leaving the photocathode to remain as stable solvated species in the liquid medium. Thus, highly light-absorbent, and therefore thin, metallic layers can be used for detection, thereby reducing dark current at a given temperature, with a consequent reduction in cooling requirements at constant detector performance.

Hirschfeld, T.B.

1982-05-06T23:59:59.000Z

495

Categorical Exclusion Determinations: National Energy Technology Laboratory  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1, 2010 1, 2010 CX-001158: Categorical Exclusion Determination An Evaluation of the Carbon Sequestration Potential of the Cambro-Ordovician Strata of the Illinois and Michigan Basins CX(s) Applied: A9 Date: 03/11/2010 Location(s): Bloomington, Indiana Office(s): Fossil Energy, National Energy Technology Laboratory March 11, 2010 CX-001153: Categorical Exclusion Determination Roll-to-Roll Solution-Processable Small-Molecule Organic Light-Emitting Diodes (Wilmington) Date: 03/11/2010 Location(s): Wilmington, Delaware Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory March 11, 2010 CX-001152: Categorical Exclusion Determination Roll-to-Roll Solution-Processable Small-Molecule Organic Light-Emitting Diodes (Niskayuna) CX(s) Applied: B3.6

496

CX-004127: Categorical Exclusion Determination | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4127: Categorical Exclusion Determination 4127: Categorical Exclusion Determination CX-004127: Categorical Exclusion Determination Energy Saving Phosphorescent Organic Light Emitting Diode (OLED) Luminaires CX(s) Applied: B3.6, B5.1 Date: 09/14/2010 Location(s): Ewing, New Jersey Office(s): Energy Efficiency and Renewable Energy In this proposed program Universal Display Corporation and Acuity Brands Lighting will team to develop a general purpose luminaire targeting high-end Commercial and Institutional spaces based on Red, Green, and Blue (RGB) striped organic light emitting diodes (OLEDs) panels. The end-use areas would include office, education, hospitality, retail, and healthcare, including public buildings. The target luminaire will have a total luminous output of 4,000-5,000 lumens, a tunable Correlated color temperature (CCT)

497

Categorical Exclusion Determinations: Pennsylvania | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

March 19, 2010 March 19, 2010 CX-001308: Categorical Exclusion Determination Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Allison Park) CX(s) Applied: A2, A9 Date: 03/19/2010 Location(s): Allison Park, Pennsylvania Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory March 19, 2010 CX-001307: Categorical Exclusion Determination Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Harmar) CX(s) Applied: B3.6 Date: 03/19/2010 Location(s): Harmar, Pennsylvania Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory March 17, 2010 CX-001328: Categorical Exclusion Determination Fischer Tropsch Laboratory CX(s) Applied: B3.6 Date: 03/17/2010 Location(s): Pittsburgh, Pennsylvania

498

Categorical Exclusion (CX) Determinations By Date | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1, 2010 1, 2010 CX-001158: Categorical Exclusion Determination An Evaluation of the Carbon Sequestration Potential of the Cambro-Ordovician Strata of the Illinois and Michigan Basins CX(s) Applied: A9 Date: 03/11/2010 Location(s): Bloomington, Indiana Office(s): Fossil Energy, National Energy Technology Laboratory March 11, 2010 CX-001153: Categorical Exclusion Determination Roll-to-Roll Solution-Processable Small-Molecule Organic Light-Emitting Diodes (Wilmington) Date: 03/11/2010 Location(s): Wilmington, Delaware Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory March 11, 2010 CX-001152: Categorical Exclusion Determination Roll-to-Roll Solution-Processable Small-Molecule Organic Light-Emitting Diodes (Niskayuna) CX(s) Applied: B3.6

499

Categorical Exclusion Determinations: B3.6 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

July 30, 2013 July 30, 2013 CX-010825: Categorical Exclusion Determination High-Pressure Turbulent Flame Speeds and Chemical Kinetics of Syngas Blends With and Without Impurities CX(s) Applied: B3.6 Date: 07/30/2013 Location(s): Texas Offices(s): National Energy Technology Laboratory July 30, 2013 CX-010824: Categorical Exclusion Determination Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07/30/2013 Location(s): New Jersey Offices(s): National Energy Technology Laboratory July 30, 2013 CX-010823: Categorical Exclusion Determination Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07/30/2013 Location(s): Pennsylvania Offices(s): National Energy Technology Laboratory

500

Page not found | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

51 - 11960 of 28,560 results. 51 - 11960 of 28,560 results. Download CX-001152: Categorical Exclusion Determination Roll-to-Roll Solution-Processable Small-Molecule Organic Light-Emitting Diodes (Niskayuna) CX(s) Applied: B3.6 Date: 03/11/2010 Location(s): Niskayuna, New York Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory http://energy.gov/nepa/downloads/cx-001152-categorical-exclusion-determination Download CX-001153: Categorical Exclusion Determination Roll-to-Roll Solution-Processable Small-Molecule Organic Light-Emitting Diodes (Wilmington) Date: 03/11/2010 Location(s): Wilmington, Delaware Office(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory http://energy.gov/nepa/downloads/cx-001153-categorical-exclusion-determination