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Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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1

Progress in Organic Light emitting Diodes  

NLE Websites -- All DOE Office Websites (Extended Search)

90-3075 Seminar HostPoint of Contact: Samuel Mao The development of organic light emitting diode (OLED) from its discovery in the Kodak Research Laboratories in the late 1970's...

2

Photochemistry of Organic Light?Emitting Diodes  

Science Conference Proceedings (OSTI)

The optical properties and excited?state geometries of some organic light?emitting diodes have been investigated by the SAC?CI method. The absorption and emission spectra have been predicted in high accuracy and the chain?length dependence of transition energies has been precisely reproduced. The present study provides the useful basis for the theoretical design predicting the photo?physical properties of the organic light?emitting diodes.

Masahiro Ehara; Hiroshi Nakatsuji

2007-01-01T23:59:59.000Z

3

Enhanced Light Extraction from Organic Light Emitting Diodes  

Ames Laboratory researchers have developed a soft lithography microlens fabrication and array that enables more efficient organic light emitting diodes (OLEDs), improving their commercial viability.

4

Quantum Efficiency of Micron Scaled Organic Light Emitting Diodes ...  

Science Conference Proceedings (OSTI)

Jun 1, 2004 ... Quantum Efficiency of Micron Scaled Organic Light Emitting Diodes Using Atomic Force Electroluminescence Microscopy by L.S.C. Pingree ...

5

Electron traps in organic light-emitting diodes  

Science Conference Proceedings (OSTI)

This work presents the effects of electron traps in organic light-emitting diodes using a model which includes charge injection

Min-Jan Tsai; Hsin-Fei Meng

2005-01-01T23:59:59.000Z

6

White organic light-emitting diodes: Status and perspective  

E-Print Network (OSTI)

White organic light-emitting diodes (OLEDs) are ultrathin, large-area light sources made from organic semiconductor materials. Over the past decades, much research has been spent on finding suitable materials to realize ...

Reineke, Sebastian

7

Battery cell configuration for organic light emitting diode display in modern smartphones and tablet-PCs  

E-Print Network (OSTI)

Battery cell configuration for organic light emitting diode display in modern smartphones- spite of power efficiency of organic light emitting diode (OLED) display nature, the integrated display

Pedram, Massoud

8

Efficiency enhancement of microcavity organic light emitting diodes  

Science Conference Proceedings (OSTI)

We report microcavity efficiency enhancement of organic electroluminescent devices based on the hole transporter bis(triphenyl) diamine and the electron transporter and light emitter tris(8?hydroxyquinoline) aluminum.Microcavityorganic light emitting diodes are described that emit four times the light measured in the forward direction (spectrally integrated)

R. H. Jordan; A. Dodabalapur; R. E. Slusher

1996-01-01T23:59:59.000Z

9

Organic light emitting diodes with structured electrodes  

DOE Patents (OSTI)

A cathode that contain nanostructures that extend into the organic layer of an OLED has been described. The cathode can have an array of nanotubes or a layer of nanoclusters extending out from its surface. In another arrangement, the cathode is patterned and etched to form protruding nanostructures using a standard lithographic process. Various methods for fabricating these structures are provided, all of which are compatible with large-scale manufacturing. OLEDs made with these novel electrodes have greatly enhanced electron injection, have good environmental stability.

Mao, Samuel S.; Liu, Gao; Johnson, Stephen G.

2012-12-04T23:59:59.000Z

10

Organic light-emitting diodes from homoleptic square planar complexes  

SciTech Connect

Homoleptic square planar complexes [M(N.LAMBDA.N).sub.2], wherein two identical N.LAMBDA.N bidentate anionic ligands are coordinated to the M(II) metal center, including bidentate square planar complexes of triazolates, possess optical and electrical properties that make them useful for a wide variety of optical and electrical devices and applications. In particular, the complexes are useful for obtaining white or monochromatic organic light-emitting diodes ("OLEDs"). Improved white organic light emitting diode ("WOLED") designs have improved efficacy and/or color stability at high brightness in single- or two-emitter white or monochrome OLEDs that utilize homoleptic square planar complexes, including bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) ("Pt(ptp).sub.2").

Omary, Mohammad A

2013-11-12T23:59:59.000Z

11

Local tuning of organic light-emitting diode color by dye droplet application  

E-Print Network (OSTI)

Local tuning of organic light-emitting diode color by dye droplet application T. R. Hebner and J. C and the spectra of organic light-emitting diodes made from these films can be successfully tuned by this method. S0003-6951 98 01339-4 A main goal of the field of organic light-emitting diodes OLEDs

12

Enhancement of Barrier Properties Using Ultrathin Hybrid Passivation Layer for Organic Light Emitting Diodes  

E-Print Network (OSTI)

acrylate layer and MS-31 (MgO : SiO2 ¼ 3 : 1 wt %) layer was adopted in organic light emitting diode (OLED the penetrations of oxygen and moisture. [DOI: 10.1143/JJAP.45.5970] KEYWORDS: organic light emitting diode (OLED. Introduction As a next generation display, the organic light emitting diode (OLED) has to great performances

Hwang, Sung Woo

13

Far-field radiation of photonic crystal organic light-emitting diode  

E-Print Network (OSTI)

Far-field radiation of photonic crystal organic light-emitting diode Yong-Jae Lee, Se-Heon Kim, Guk-field profile of a photonic crystal organic light emitting diode is studied to understand the viewing angle.3670) Light- emitting diodes References and links 1. M. R. Krames, H. Amano, J. J. Brown, P. L. Heremans

Lee, Yong-Hee

14

Enhanced coupling of light from organic light emitting diodes using nanoporous films  

E-Print Network (OSTI)

Enhanced coupling of light from organic light emitting diodes using nanoporous films H. J. Peng, Y the light extraction efficiency for organic light emitting diode OLED . Nanoporous alumina film was used by Bragg scattering. The corrugated light- emitting diode had two-times the efficiency as compared

Kwok, Hoi S.

15

Improvement of output coupling efficiency of organic light-emitting diodes by backside substrate modification  

E-Print Network (OSTI)

Improvement of output coupling efficiency of organic light-emitting diodes by backside substrate in determining the power efficiency of organic light emitting diodes OLEDs is the coupling effi- ciency ( cp 1999; accepted for publication 1 February 2000 The emission intensity of an organic light-emitting

16

White organic light-emitting diodes: Status and perspective  

E-Print Network (OSTI)

White organic light-emitting diodes (OLEDs) are ultra-thin, large-area light sources made from organic semiconductor materials. Over the last decades, much research has been spent on finding the suitable materials to realize highly efficient monochrome and white OLEDs. With their high efficiency, color-tunability, and color-quality, white OLEDs are emerging to become one of the next generation light sources. In this review, we discuss the physics of a variety of device concepts that are introduced to realize white OLEDs based on both polymer and small molecule organic materi als. Owing to the fact that about 80 % of the internally generated photons are trapped within the thin-film layer structure, we put a second focus on reviewing promising concepts for improved light outcoupling.

Reineke, Sebastian; Lüssem, Björn; Leo, Karl

2013-01-01T23:59:59.000Z

17

A Novel Hole-Confining Concept for Efficient Green Organic Light Emitting Diodes.  

E-Print Network (OSTI)

??Organic light emitting diode (OLED) technology has initiated a lot of interest in the display and solid state lighting market during the last decade. The… (more)

Harikrishna Mohan, Siddharth

2008-01-01T23:59:59.000Z

18

Three-color organic light-emitting diodes patterned by masked dye Florian Pschenitzka and J. C. Sturma)  

E-Print Network (OSTI)

Three-color organic light-emitting diodes patterned by masked dye diffusion Florian Pschenitzka of Physics. S0003-6951 99 02913-7 Organic light-emitting diodes OLEDs have demon- strated a remarkable

19

Electroluminescence property of organic light emitting diode (OLED)  

Science Conference Proceedings (OSTI)

Transport properties of electrons and holes were investigated not only in a anthracene-containing poly(p-phenylene-ethynylene)- alt - poly(p-phenylene-vinylene) (PPE-PPV) polymer (AnE-PVstat) light emitting diodes (OLED) but also in an ITO/Ag/polymer/Ag electron and ITO/PEDOT:PSS/polymer/Au hole only devices. Mobility of injected carriers followed the Poole-Frenkel type conduction mechanism and distinguished in the frequency range due to the difference of transit times in admittance measurement. Beginning of light output took place at the turn-on voltage (or flat band voltage)

2013-01-01T23:59:59.000Z

20

Interface electronic structures of organic light-emitting diodes with WO3 interlayer: A study by photoelectron spectroscopy  

E-Print Network (OSTI)

Interface electronic structures of organic light-emitting diodes with WO3 interlayer: A study injec- tion and transport layers in an organic light-emitting diode (OLED) structure has been studied B.V. All rights reserved. 1. Introduction OLEDs (organic light-emitting diodes) are display de

Kim, Sehun

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

The fabrication of small molecule organic light-emitting diode pixels by laser-induced forward transfer  

E-Print Network (OSTI)

The fabrication of small molecule organic light-emitting diode pixels by laser-induced forward online 23 January 2013) Laser-induced forward transfer (LIFT) is a versatile organic light-emitting diode, a modified LIFT process has been used to fabricate small molecule Alq3 organic light-emitting diodes (SMOLEDs

22

4.2: Design of an Improved Pixel for a Polysilicon Active Matrix Organic Light Emitting Diode Display  

E-Print Network (OSTI)

4.2: Design of an Improved Pixel for a Polysilicon Active Matrix Organic Light Emitting Diode active matrix organic light emitting diode (AMOLED) pixel with high pixel to pixel luminance uniformity such as organic light emitting diodes (OLEDs) are presently of great interest due to their potential application

23

High-density organic light emitting diodes by nanoimprint technology Krutarth Trivedi, Caleb Nelson, Li Tao, Mathew Goeckner, Walter Hua)  

E-Print Network (OSTI)

High-density organic light emitting diodes by nanoimprint technology Krutarth Trivedi, Caleb Nelson sources. Despite the considerable development of inorganic semiconductor based light emitting diodes of miniaturization to nanoscale. Organic light emitting diode (OLED) technology is immune to quantum confinement

Hu, Wenchuang "Walter"

24

Storage of charge carriers on emitter molecules in organic light-emitting diodes  

E-Print Network (OSTI)

Organic light-emitting diodes (OLEDs) using the red phosphorescent emitter iridium(III)bis(2-methyldibenzo[f,h]quinoxaline) (acetylacetonate) [Ir(MDQ)[subscript 2](acac)] are studied by time-resolved electroluminescence ...

Reineke, Sebastian

25

Components, production processes, and recommendations for future research in organic light emitting diodes  

E-Print Network (OSTI)

Organic Light Emitting Diodes (OLEDs) are small, optoelectronic devices that can be used in the production of energy-efficient, high definition displays in cell phones, computers, and televisions. These devices have great ...

Hunting, Lindsay (Lindsay E.)

2009-01-01T23:59:59.000Z

26

Vacuum-free lamination of low work function cathode for efficient solution-processed organic light-emitting diodes  

E-Print Network (OSTI)

-coated organic light-emitting diode is transferred from a soft polydimethylsiloxane (PDMS) mold by lamination, or blade coating [1,2] for organic light emitting diode (OLED) as well as solar cell. The top electrodeVacuum-free lamination of low work function cathode for efficient solution-processed organic light-emitting

Meng, Hsin-Fei

27

Intramolecular excimer emission as a blue light source in fluorescent organic light emitting diodes: a promising molecular design  

E-Print Network (OSTI)

Intramolecular excimer emission as a blue light source in fluorescent organic light emitting diodes Light Emitting Diode (OLED), intermolecular p­p interactions should be usually suppressed to avoid any Emitting Diodes (SMOLEDs) is almost absent from the literature. In this work, three aryl-substituted Di

28

Long persistent light emitting diode  

Science Conference Proceedings (OSTI)

Light emitting diodes(LEDs)coated with Sr 2 Mg Si 2 O 7 : Eu 2 + Nd 3 + (blue) Sr Al 2 O 4 : Eu 2 + Dy 3 + (green) Sr S : Eu 2 + Y 3 + Ce 3 + (orange)

D. Jia; D. N. Hunter

2006-01-01T23:59:59.000Z

29

DC sputtered indium-tin oxide transparent cathode for organic light-emitting diodes  

E-Print Network (OSTI)

Abstract—The performance of top-emitting organic light-emitting diodes depends not just on the choice of the transparent cathodes but also on their techniques of formation. Compared to the damage induced by radio frequency sputtering of indium-tin oxide cathode, that induced by dc sputtering was verified to be less severe and relatively independent of the sputtering power. Consequently, a high dc sputtering power of 120 W could be employed to achieve a high deposition rate of 0.1 nm/s. Adequate emission efficiency was maintained, even with a relatively thin 7-nm copper (II) phthalocyanine buffer layer. Index Terms—Indium-tin oxide, organic light-emitting diodes, sputtering, top-emission, transparent cathode. I.

Haiying Chen; Chengfeng Qiu; Man Wong; Hoi Sing Kwok

2003-01-01T23:59:59.000Z

30

The effect of anisotropy on light extraction of organic light-emitting diodes with photonic crystal structure  

Science Conference Proceedings (OSTI)

The light extraction efficiency of organic light-emitting diodes (OLED) is greatly limited due to the difference in refractive indexes betweenmaterials ofOLED.We fabricatedOLED with photonic crystal microstructures in the interface between the glass ...

Wei Xu, Yang Li

2013-01-01T23:59:59.000Z

31

Manganese-doped indium oxide and its application in organic light-emitting diodes  

SciTech Connect

Thin films of manganese-doped indium oxide (IMO) deposited by electron beam evaporation have been investigated as anodes in organic light-emitting diodes (OLEDs). The IMO films have a high work function of 5.35 eV, a desirable surface morphology with an average roughness of 1.1 nm, a high average optical transmittance of 87.2% in the visible region, and a maximum optical transmittance of 92% at 460 nm. It is demonstrated that an IMO anode can effectively improve hole injection at the anode/organic interface, resulting in OLEDs with an increased electroluminescent efficiency.

Liao Yaqin [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of Chinese Academy of Sciences, Beijing 100080 (China); Lu Qipeng; Fan Yi; Liu Xingyuan [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

2011-07-11T23:59:59.000Z

32

Light Emitting Diodes and General Lighting  

NLE Websites -- All DOE Office Websites (Extended Search)

Light Emitting Diodes and General Lighting Speaker(s): Martin Moeck Date: August 6, 2009 - 12:00pm Location: 90-3122 We give a short overview on high-power light emitting diodes,...

33

LIGHT EMITTING DIODE CHARACTERISTICS (SAMPLE LAB WRITEUP)  

E-Print Network (OSTI)

1 LIGHT EMITTING DIODE CHARACTERISTICS (SAMPLE LAB WRITEUP) John A. McNeill ECE Box 000 January 19, 1997 ABSTRACT This lab investigates the V-I characteristic of a light-emitting diode (LED

McNeill, John A.

34

Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract--In metal organic vapor phase epitaxy we developed  

E-Print Network (OSTI)

Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract-- In metal organic vapor phase epitaxy we developed GaInN/GaN quantum well material suitable for 500 ­ 580 nm light emitting diodes at longer wavelengths. Index Terms-- a-plane GaN, GaInN, Green light emitting diode, m-plane GaN I

Wetzel, Christian M.

35

Broadband light-emitting diode  

DOE Patents (OSTI)

A broadband light-emitting diode. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3-2 .mu.m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-division-multiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft.

Fritz, Ian J. (Albuquerque, NM); Klem, John F. (Sandia Park, NM); Hafich, Michael J. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

36

Broadband light-emitting diode  

DOE Patents (OSTI)

A broadband light-emitting diode is disclosed. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3--2 {micro}m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-divisionmultiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft. 10 figs.

Fritz, I.J.; Klem, J.F.; Hafich, M.J.

1998-07-14T23:59:59.000Z

37

Performance enhancement of organic light-emitting diodes by chlorine plasma treatment of indium tin oxide  

SciTech Connect

The characteristics of green phosphorescent organic light-emitting diodes (OLEDs) fabricated on ITO/glass substrates pretreated with low-energy O{sub 2} and Cl{sub 2} plasma were compared. At 20 mA/cm{sup 2}, the OLEDs with O{sub 2} and Cl{sub 2} plasma-treated indium tin oxide (ITO) had voltages of 9.6 and 7.6 eV, and brightness of 9580 and 12380 cd/m{sup 2}, respectively. At {approx}10{sup 4} cd/m{sup 2}, the latter had a 30% higher external quantum efficiency and a 74% higher power efficiency. Photoelectron spectroscopies revealed that Cl{sub 2} plasma treatment created stable In-Cl bonds and raised the work function of ITO by up to 0.9 eV. These results suggest that the better energy level alignment at the chlorinated ITO/organic interface enhances hole injection, leading to more efficient and more reliable operation of the OLEDs. The developed plasma chlorination process is very effective for surface modification of ITO and compatible with the fabrication of various organic electronics.

Cao, X. A.; Zhang, Y. Q. [Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, West Virginia 26506 (United States)

2012-04-30T23:59:59.000Z

38

Light emitting diode color rendition properties.  

E-Print Network (OSTI)

??This paper discusses the color rendition capabilities of light emitting diodes (LEDs) and their relationship with the current standard for color rendition quality. The current… (more)

Hood, Sean

2013-01-01T23:59:59.000Z

39

Electrically driven nanopyramid green light emitting diode  

Science Conference Proceedings (OSTI)

An electrically driven nanopyramid green light emitting diode(LED) was demonstrated. The nanopyramid arrays were fabricated from a GaN substrate by patterned nanopillar etch

S.-P. Chang; Y.-C. Chen; J.-K. Huang; Y.-J. Cheng; J.-R. Chang; K.-P. Sou; Y.-T. Kang; H.-C. Yang; T.-C. Hsu; H.-C. Kuo; C.-Y. Chang

2012-01-01T23:59:59.000Z

40

Soft holographic interference lithography microlens for enhanced organic light emitting diode light extraction  

SciTech Connect

Very uniform 2 {micro}m-pitch square microlens arrays ({micro}LAs), embossed on the blank glass side of an indium-tin-oxide (ITO)-coated 1.1 mm-thick glass, are used to enhance light extraction from organic light-emitting diodes (OLEDs) by {approx}100%, significantly higher than enhancements reported previously. The array design and size relative to the OLED pixel size appear to be responsible for this enhancement. The arrays are fabricated by very economical soft lithography imprinting of a polydimethylsiloxane (PDMS) mold (itself obtained from a Ni master stamp that is generated from holographic interference lithography of a photoresist) on a UV-curable polyurethane drop placed on the glass. Green and blue OLEDs are then fabricated on the ITO to complete the device. When the {mu}LA is {approx}15 x 15 mm{sup 2}, i.e., much larger than the {approx}3 x 3 mm{sup 2} OLED pixel, the electroluminescence (EL) in the forward direction is enhanced by {approx}100%. Similarly, a 19 x 25 mm{sup 2} {mu}LA enhances the EL extracted from a 3 x 3 array of 2 x 2 mm{sup 2} OLED pixels by 96%. Simulations that include the effects of absorption in the organic and ITO layers are in accordance with the experimental results and indicate that a thinner 0.7 mm thick glass would yield a {approx}140% enhancement.

Park, Joong-Mok; Gan, Zhengqing; Leung, Wai Y.; Liu, Rui; Ye, Zhuo; Constant, Kristen; Shinar, Joseph; Shinar, Ruth; Ho, Kai-Ming

2011-06-06T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Quantum Dot Light Emitting Diode  

SciTech Connect

The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m{sup 2}, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

Kahen, Keith

2008-07-31T23:59:59.000Z

42

Quantum Dot Light Emitting Diode  

SciTech Connect

The project objective is to create low cost coatable inorganic light emitting diodes, composed of quantum dot emitters and inorganic nanoparticles, which have the potential for efficiencies equivalent to that of LEDs and OLEDs and lifetime, brightness, and environmental stability between that of LEDs and OLEDs. At the end of the project the Recipient shall gain an understanding of the device physics and properties of Quantum-Dot LEDs (QD-LEDs), have reliable and accurate nanocrystal synthesis routines, and have formed green-yellow emitting QD-LEDs with a device efficiency greater than 3 lumens/W, a brightness greater than 400 cd/m2, and a device operational lifetime of more than 1000 hours. Thus the aim of the project is to break the current cost-efficiency paradigm by creating novel low cost inorganic LEDs composed of inorganic nanoparticles.

Keith Kahen

2008-07-31T23:59:59.000Z

43

Fabrication and Characterization of New Hybrid Organic Light Emitting Diode (OLED): Europium-picrate-triethylene oxide Complex  

SciTech Connect

Thin-film light emitting devices based on organic materials have attracted vast interest in applications such as light emitting diode (LED) and flat-panel display. The organic material can be attached with inorganic material to enhance the performance of the light emitting device. A hybrid OLED based on a new complex of europium picrate (Eu-pic) with triethylene oxide (EO3) ligand is fabricated. The OLED is fabricated by using spin coating technique with acetone as the solvent and aluminum as the top electrode. The optical, photoluminescence (PL) and electrical properties of the sample are carried out by UV-Vis spectroscopy (Jasco V-750), luminescence spectroscopy (Perkin Elmer LS-500) and source measure unit (SMU)(Keithly), respectively.

Sarjidan, M. A. Mohd; Abu Zakaria, N. Z. A.; Abd. Majid, W. H. [Solid State Research Laboratory, Department of Physics, University of Malaya, 50603, Kuala Lumpur (Malaysia); Kusrini, Eny; Saleh, M. I. [School of Chemical Sciences, Universiti Sains Malaysia, 11800 Penang (Malaysia)

2009-07-07T23:59:59.000Z

44

Improved property in organic light-emitting diode utilizing two Al/Alq3 layers  

Science Conference Proceedings (OSTI)

We reported on the fabrication of organic light-emitting devices (OLEDs) utilizing the two Al/Alq"3 layers and two electrodes. This novel green device with structure of Al(110nm)/tris(8-hydroxyquinoline) aluminum (Alq"3)(65nm)/Al(110nm)/Alq"3(50nm)/N,N'-dipheny1-N, ... Keywords: Emitting layer, OLEDS, Transporting layer

Chunlin Zhang; Su Liu; Fangcong Wang; Yong Zhang

2008-12-01T23:59:59.000Z

45

Optical Simulation of Top-emitting Organic Light Emitting Diodes H. J. Peng, C.F. Qiu, Z. L. Xie, H. Y. Chen, M. Wong and H. S. Kwok  

E-Print Network (OSTI)

8.3.3-89 Optical Simulation of Top-emitting Organic Light Emitting Diodes H. J. Peng, C.F. Qiu, Z the optical effects for the top-emitting organic light emitting diodes. The optical performance of the devices with experiments Keywords: Top-emitting organic light emitting diode, optical modeling, microcavity INTRODUCTION

Kwok, Hoi S.

46

A Polysilicon Active Matrix Organic Light Emitting Diode Display with Integrated Drivers R.M.A. Dawson, Z. Shen, D.A. Furst, S. Connor, J. Hsu, M.G. Kane, R.G. Stewart, A. Ipri  

E-Print Network (OSTI)

A Polysilicon Active Matrix Organic Light Emitting Diode Display with Integrated Drivers R.S.A. Abstract The design of an active matrix organic light emitting diode (AMOLED) display using a polysilicon. Introduction Organic light emitting diodes (OLEDs) are presently of great interest due to their potential

47

Energy_Savings_Light_Emitting_Diodes_Niche_Lighting_Apps.pdf...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

EnergySavingsLightEmittingDiodesNicheLightingApps.pdf EnergySavingsLightEmittingDiodesNicheLightingApps.pdf EnergySavingsLightEmittingDiodesNicheLightingApps.p...

48

Thermal pumping of light-emitting diodes  

E-Print Network (OSTI)

The work presented here is a study of thermally enhanced injection in light-emitting diodes (LEDs). This effect, which we refer to as "thermal pumping", results from Peltier energy exchange from the lattice to charge ...

Gray, Dodd (Dodd J.)

2011-01-01T23:59:59.000Z

49

ZnSe light?emitting diodes  

Science Conference Proceedings (OSTI)

We report the successful fabrication of ZnSe p?n junction light?emitting diodes in which Li and Cl are used as p?type and n?type dopants

J. Ren; K. A. Bowers; B. Sneed; D. L. Dreifus; J. W. Cook Jr.; J. F. Schetzina; R. M. Kolbas

1990-01-01T23:59:59.000Z

50

Resonant cavity light?emitting diode  

Science Conference Proceedings (OSTI)

A novel concept of a light?emitting diode(LED) is proposed and demonstrated in which the active region of the device is placed in a resonantoptical cavity. As a consequence

E. F. Schubert; Y.?H. Wang; A. Y. Cho; L.?W. Tu; G. J. Zydzik

1992-01-01T23:59:59.000Z

51

Improved Performance of a Fluorescent Blue Organic Light Emitting ...  

Science Conference Proceedings (OSTI)

Presentation Title, Improved Performance of a Fluorescent Blue Organic Light Emitting Diode with Hole Blocking Materials as Dopants for Transport Layers.

52

MoO3 as combined hole injection layer and tapered spacer in combinatorial multicolor microcavity organic light emitting diodes  

SciTech Connect

Multicolor microcavity ({mu}C) organic light-emitting diode (OLED) arrays were fabricated simply by controlling the hole injection and spacer MoO{sub 3} layer thickness. The normal emission was tunable from {approx}490 to 640 nm and can be further expanded. A compact, integrated spectrometer with two-dimensional combinatorial arrays of {mu}C OLEDs was realized. The MoO{sub 3} yields more efficient and stable devices, revealing a new breakdown mechanism. The pixel current density reaches {approx}4 A/cm{sup 2} and a maximal normal brightness {approx}140 000 Cd/m{sup 2}, which improves photoluminescence-based sensing and absorption measurements.

Liu, R.; Xu, Chun; Biswas, Rana; Shinar, Joseph; Shinar, Ruth

2011-09-01T23:59:59.000Z

53

Driving conditions dependence of magneto-electroluminescence in tri-(8-hydroxyquinoline)-aluminum based organic light emitting diodes  

E-Print Network (OSTI)

we investigated the magneto-electroluminescence (MEL) in tri-(8-hydroxyquinoline)-aluminum based organic light-emitting diodes (OLEDs) through the steady-state and transient method simultaneously. The MELs show the great different behaviors when we turn the driving condition from a constant voltage to a pulse voltage. For devices driven by the constant voltage, the MELs are similar with the literature data; for devices driven by the pulse voltage, the MELs are quite different, they firstly increase to a maximum then decrease as the magnetic field increases continuously. Negative MELs can be seen when both the magnetic field and driving voltage are high enough.

Peng, Qiming; Li, Xianjie; Li, Mingliang; Li, Feng

2011-01-01T23:59:59.000Z

54

Poly(p-phenylene vinylene)/tris(8-hydroxy) quinoline aluminum heterostructure light emitting diode  

E-Print Network (OSTI)

Poly(p-phenylene vinylene)/tris(8-hydroxy) quinoline aluminum heterostructure light emitting diode are presented from polymer/molecular organic heterostructure light emitting diodes composed of a layer,2 organic light emitting diodes OLEDs utilizing fluorescent molecules have attracted considerable interest

55

High efficiency light emitting diode with anisotropically etched GaN-sapphire interface  

E-Print Network (OSTI)

High efficiency light emitting diode with anisotropically etched GaN- sapphire interface M. H. Lo and optimization of a light-emitting diode projection micro-stereolithography three-dimensional manufacturingGaN micro-light emitting diodes Appl. Phys. Lett. 101, 231110 (2012) A bright cadmium-free, hybrid organic

56

Light Emitting Diodes (LEDs) for General Illumiation  

NLE Websites -- All DOE Office Websites (Extended Search)

LIGHT LIGHT EMITTING DIODES (LEDS) FOR GENERAL ILLUMINATION AN OIDA TECHNOLOGY ROADMAP An OIDA Report March 2001 Co-Sponsored by DOE/BTS and OIDA Compiled by Eric D. Jones Sandia National Laboratories OIDA Member Use Only OIDA OPTOELECTRONICS INDUSTRY DEVELOPMENT ASSOCIATION 1133 Connecticut Avenue, NW Suite 600 Washington, DC 20036 Ph: (202) 785-4426 Fax: (202) 785-4428 Web: http://www.OIDA.org © 2001 OIDA Optoelectronics Industry Development Association All data contained in this report is proprietary to OIDA and may not be distributed in either original or reproduced form to anyone outside the client's internal organization within five years of the report date without prior written permission of the Optoelectronics Industry Development Association. Published by: Optoelectronics Industry Development Association

57

ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition  

SciTech Connect

We report a breakthrough in fabricating ZnO homojunction light-emitting diode by metal organic chemical vapor deposition. Using NO plasma, we are able to grow p-type ZnO thin films on n-type bulk ZnO substrates. The as-grown films on glass substrates show hole concentration of 10{sup 16}-10{sup 17} cm{sup -3} and mobility of 1-10 cm{sup 2} V{sup -1} s{sup -1}. Room-temperature photoluminescence spectra reveal nitrogen-related emissions. A typical ZnO homojunction shows rectifying behavior with a turn-on voltage of about 2.3 V. Electroluminescence at room temperature has been demonstrated with band-to-band emission at I=40 mA and defect-related emissions in the blue-yellow spectrum range.

Xu, W.Z.; Ye, Z.Z.; Zeng, Y.J.; Zhu, L.P.; Zhao, B.H.; Jiang, L.; Lu, J.G.; He, H.P.; Zhang, S.B. [State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2006-04-24T23:59:59.000Z

58

Water Cooling of High Power Light Emitting Diode Henrik Srensen  

E-Print Network (OSTI)

Water Cooling of High Power Light Emitting Diode Henrik Sørensen Department of Energy Technology and product lifetime. The high power Light Emitting Diodes (LED) belongs to the group of electronics

Sørensen, Henrik

59

LIGHT EMITTING DIODE (LED) TRAFFIC SIGNAL SURVEY RESULTS  

E-Print Network (OSTI)

CALIFORNIA ENERGY COMMISSION LIGHT EMITTING DIODE (LED) TRAFFIC SIGNAL SURVEY RESULTS STAFFREPORT: Assistance needs 26 Item 12: Information requested 28 Appendix A: Light Emitting Diode (LED) Traffic Signal efficiency upgrades. - 29 - #12;APPENDIX A - 30 - #12;California Energy Commission Light Emitting Diode (LED

60

Light Emitting Diode (LED) Lighting and Systems  

Science Conference Proceedings (OSTI)

This EPRI Technical Update addresses the most promising and unique energy efficient light source light emitting diode (LED) lighting. Business and technical market factors (Chapter 2) explain the upcoming growth of the LED and LED lighting market. Future technical improvements to LEDs and systems are also emphasized. Discussion of the importance of utility involvement in helping their customers make the switch from traditional lighting to LED lighting is provided. LED lighting technologies are covered in...

2007-12-21T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Organic Light-Emitting Diodes (OLEDs) and Optically-Detected Magnetic Resonance (ODMR) studies on organic materials  

Science Conference Proceedings (OSTI)

Organic semiconductors have evolved rapidly over the last decades and currently are considered as the next-generation technology for many applications, such as organic light-emitting diodes (OLEDs) in flat-panel displays (FPDs) and solid state lighting (SSL), and organic solar cells (OSCs) in clean renewable energy. This dissertation focuses mainly on OLEDs. Although the commercialization of the OLED technology in FPDs is growing and appears to be just around the corner for SSL, there are still several key issues that need to be addressed: (1) the cost of OLEDs is very high, largely due to the costly current manufacturing process; (2) the efficiency of OLEDs needs to be improved. This is vital to the success of OLEDs in the FPD and SSL industries; (3) the lifetime of OLEDs, especially blue OLEDs, is the biggest technical challenge. All these issues raise the demand for new organic materials, new device structures, and continued lower-cost fabrication methods. In an attempt to address these issues, we used solution-processing methods to fabricate highly efficient small molecule OLEDs (SMOLEDs); this approach is costeffective in comparison to the more common thermal vacuum evaporation. We also successfully made efficient indium tin oxide (ITO)-free SMOLEDs to further improve the efficiency of the OLEDs. We employed the spin-dependent optically-detected magnetic resonance (ODMR) technique to study the luminescence quenching processes in OLEDs and organic materials in order to understand the intrinsic degradation mechanisms. We also fabricated polymer LEDs (PLEDs) based on a new electron-accepting blue-emitting polymer and studied the effect of molecular weight on the efficiency of PLEDs. All these studies helped us to better understand the underlying relationship between the organic semiconductor materials and the OLEDs’ performance, and will subsequently assist in further enhancing the efficiency of OLEDs. With strongly improved device performance (in addition to other OLEDs' attributes such as mechanical flexibility and potential low cost), the OLED technology is promising to successfully compete with current technologies, such as LCDs and inorganic LEDs.

Cai, Min

2011-11-30T23:59:59.000Z

62

Indium-tin-oxide-free tris(8-hydroxyquinoline) Al organic light-emitting diodes with 80% enhanced power efficiency  

Science Conference Proceedings (OSTI)

Efficient indium tin oxide (ITO)-free small molecule organic light-emitting diodes (SMOLEDs) with multilayered highly conductive poly(3,4-ethylenedioxy thiophene):poly(styrenesulfonate) (PEDOT:PSS) as the anode are demonstrated. PEDOT:PSS/MoO{sub 3}/N,N'-diphenyl- N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPD)/tris(8-hydroxyquinoline) Al (Alq{sub 3})/4,7-diphenyl-1,10-phenanthroline (BPhen)/LiF/Al SMOLEDs exhibited a peak power efficiency of 3.82 lm/W, 81% higher than that of similar ITO-based SMOLEDs (2.11 lm/W). The improved performance is believed to be due to the higher work function, lower refractive index, and decreased surface roughness of PEDOT:PSS vs ITO, and to Ohmic hole injection from PEDOT:PSS to the NPD layer via the MoO{sub 3} interlayer. The results demonstrate that PEDOT:PSS can substitute ITO in SMOLEDs with strongly improved device performance.

Cai, Min; Xiao, Teng; Liu, Rui; Chen, Ying; Shinar, Ruth; Shinar, Joseph

2011-10-11T23:59:59.000Z

63

Highly-selective wettability on organic light-emitting-diodes patterns by sequential low-power plasmas  

SciTech Connect

Patterned organic light-emitting-diode substrates were treated by oxygen (O{sub 2}) and tetrafluoromethane (CF{sub 4}) radio-frequency (rf, 13.56 MHz) plasmas of low-power (close to 1 W) that were capacitively-coupled. An unexpected wettability contrast (water contact angle difference up to 90 deg. ) between the indium-tin-oxide anode and the bank resist regions was achieved, providing excellent conditioning prior to the ink-jet printing. This selectivity was found to be adjustable by varying the relative exposure time to the O{sub 2} and CF{sub 4} sequential plasmas. Static contact angle measurements and extensive x-ray photoelectron spectroscopy analyses showed that the wetting properties depend on the carbon and fluorine chemical functional groups formed at the outermost surface layers, whereas atomic force microscopy images did not show a morphological change. Plasma optical emission spectroscopy and ion mass spectroscopy suggested that surface functionalization was initiated by energy transfer from ionic species (O{sup +}, O{sub 2}{sup +}, CF{sup +}, CF{sub 2}{sup +}, and CF{sub 3}{sup +}) and excited neutrals (O{sup *} and F{sup *}). The absolute ion fluxes measured on the substrates were up to 10{sup 14} cm{sup -2} s{sup -1} and the ion energies up to 20 eV, despite the low powers applied during the process.

Svarnas, P.; Edwards, A. J.; Bradley, J. W. [Department of Electrical Engineering and Electronics, Technological Plasmas Group, University of Liverpool, Merseyside L69 3GJ (United Kingdom); Yang, L.; Munz, M.; Shard, A. G. [Analytical Science Division, National Physical Laboratory (NPL), Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom)

2010-05-15T23:59:59.000Z

64

Highly Efficient Silicon Light Emitting Diode  

E-Print Network (OSTI)

In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a local strain field that is formed by dislocation loop arrays. The dependence of device electroluminescent properties on the annealing conditions is carefully examined as a high temperature process has profound influence on these dislocations. Increased luminescent intensity at higher device temperature, together with pure diffusion current conduction mechanism evidently shows the influence of the dislocation loops. The electrical properties of the diode are reasonable with low leakage reverse current.

Leminh Holleman Wallinga; P. Leminh; J. Holleman; H. Wallinga

2000-01-01T23:59:59.000Z

65

Red-green-blue polymer light-emitting diode pixels printed by optimized laser-induced forward transfer  

E-Print Network (OSTI)

Red-green-blue polymer light-emitting diode pixels printed by optimized laser-induced forward tri-color organic light-emitting diode (OLED) pixels. At reduced pressures, and with a defined donor already been used to fabricate basic small-molecule organic light-emitting diodes (OLEDs)2,3 and polymeric

66

Si Heterostructures for Pure UV Light Emitting Diode with Carrier ...  

Science Conference Proceedings (OSTI)

Presentation Title, Development of ZnO/MgO/p+-Si Heterostructures for Pure UV Light Emitting Diode with Carrier Blocking Layer. Author(s), Byung Oh Jung, ...

67

High power flip-chip light emitting diode.  

E-Print Network (OSTI)

??xiv, 74 leaves : ill. (some col.) ; 30 cm HKUST Call Number: Thesis ELEC 2004 Lai Recently, Light-emitting diodes (LEDs) are widely used in… (more)

Lai, Yin Hing

2004-01-01T23:59:59.000Z

68

Analysis of surface plasmon mediated light emitting diode efficiency enhancement.  

E-Print Network (OSTI)

?? The extraction of light from current light emitting diodes (LEDs) is very low due to the large index of refraction mismatch between the semiconductor… (more)

Holmstedt, Jason

2011-01-01T23:59:59.000Z

69

Junction temperature measurement of light emitting diode by electroluminescence  

Science Conference Proceedings (OSTI)

Junction temperature (JT) is a key parameter of the performance and lifetime of light emitting diodes(LEDs). In this paper

S. M. He; X. D. Luo; B. Zhang; L. Fu; L. W. Cheng; J. B. Wang; W. Lu

2011-01-01T23:59:59.000Z

70

Sequential Printing by Laser-Induced Forward Transfer To Fabricate a Polymer Light-Emitting Diode Pixel  

E-Print Network (OSTI)

Sequential Printing by Laser-Induced Forward Transfer To Fabricate a Polymer Light-Emitting Diode-1015, Lausanne, Switzerland ABSTRACT: Patterned deposition of polymer light-emitting diode (PLED Organic light-emitting diodes (OLEDs) have been investigated in detail for nearly a quarter of a century,1

71

Please cite this article in press as: J. Shaw-Stewart, et al., The optimisation of the laser-induced forward transfer process for fabrication of polyfluorene-based organic light-emitting diode pixels, Appl. Surf. Sci. (2012), http://dx.doi.org/10.1016/j.a  

E-Print Network (OSTI)

-induced forward transfer process for fabrication of polyfluorene-based organic light-emitting diode pixels, Appl-induced forward transfer process for fabrication of polyfluorene-based organic light-emitting diode pixels James been used to fabricate various types of organic light- emitting diodes (OLEDs), and the process itself

72

White light emitting diode as liquid crystal display backlight; High brightness light emitting diode as liquid crystal display backlight.  

E-Print Network (OSTI)

??The discovery of high brightness (white) light emitting diode (LED) is considered as a real threat to the current lighting industry in various applications. One… (more)

Soon, Chian Myau

2007-01-01T23:59:59.000Z

73

Effect of carbazoleoxadiazole excited-state complexes on the efficiency of dye-doped light-emitting diodes  

E-Print Network (OSTI)

a profound effect on the external quantum efficiency of dye-doped organic light-emitting diodes employing Institute of Physics. DOI: 10.1063/1.1469692 I. INTRODUCTION Thin-film organic light-emitting diodes LEDsEffect of carbazole­oxadiazole excited-state complexes on the efficiency of dye-doped light-emitting

74

Fabrication of poly(p-phenyleneacetylene) light-emitting diodes  

DOE Patents (OSTI)

Acetylene-containing poly(p-phenyleneacetylene) (PPA)-based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.

1994-08-02T23:59:59.000Z

75

Poly (p-phenyleneacetylene) light-emitting diodes  

DOE Patents (OSTI)

Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.; Barton, T.J.; Vardeny, Z.V.

1994-10-04T23:59:59.000Z

76

Fabrication of poly(p-phenyleneacetylene) light-emitting diodes  

DOE Patents (OSTI)

Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as A1 or A1/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

Shinar, Joseph (Ames, IA); Swanson, Leland S. (Ames, IA); Lu, Feng (Ames, IA); Ding, Yiwei (Ames, IA)

1994-08-02T23:59:59.000Z

77

Poly (p-phenyleneneacetylene) light-emitting diodes  

DOE Patents (OSTI)

Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

Shinar, Joseph (Ames, IA); Swanson, Leland S. (Ames, IA); Lu, Feng (Ames, IA); Ding, Yiwei (Ames, IA); Barton, Thomas J. (Ames, IA); Vardeny, Zeev V. (Salt Lake City, UT)

1994-10-04T23:59:59.000Z

78

Development of ZnO Based Light Emitting Diodes and Laser Diodes.  

E-Print Network (OSTI)

??ZnO based homojunction light emitting diode, double heterojunction light emitting diode, embedded heterojunction random laser diode and Fabry-Perot nanowire laser devices were fabricated and characterized.… (more)

Kong, Jieying

2012-01-01T23:59:59.000Z

79

Power saving regulated light emitting diode circuit  

SciTech Connect

A power saving regulated light source circuit, comprising a light emitting diode (LED), a direct current source and a switching transistor connected in series with the LED, a control voltage producing resistor connected in series with the LED to produce a control voltage corresponding to the current through the LED, a storage capacitor connected in parallel with the series combination of the LED and the resistor, a comparator having its output connected to the input of the transistor, the comparator having a reference input and a control input, a stabilized biasing source for supplying a stabilized reference voltage to the reference input, the control input of the comparator being connected to the control voltage producing resistor, the comparator having a high output state when the reference voltage exceeds the control voltage while having a low output state when the control voltage exceeds the reference voltage, the transistor being conductive in response to the high state while being nonconductive in response to the low state, the transistor when conductive being effective to charge the capacitor and to increase the control voltage, whereby the comparator is cycled between the high and low output states while the transistor is cycled between conductive and nonconductive states.

Haville, G. D.

1985-03-12T23:59:59.000Z

80

Proton damage effects on light emitting diodes  

SciTech Connect

We have studied the effects of 16-MeV proton irradiation on the performance of a variety of light emitting diodes (LED's) emitting between 820 and 1300 nm. Total light output and current were measured at room temperature as a function of forward bias prior to and following a sequence of room temperature 16-MeV proton irradiations. Our results indicate that the relative amount of proton-induced degradation from one LED type to another is similar to that observed for neutron and gamma irradiations. More specifically, the most sensitive device is the amphoterically Si-doped GaAs LED which is characterized by a long preirradiation minority carrier lifetime. The most resistant LEDs are the high radiance GaAlAs (820 nm) and InGaAsP (1300 nm) LEDs. As in the case of Si devices, the degradation rate per irradiating particle fluence is significantly greater for proton irradiation of these LEDs than it is for neutron exposure. Neutron damage data presented herein indicate that the ratio of proton-to-neutron degradation rates can be as high as 100. Lifetime-damage constant products for constant current operation are calculated for each LED type and vary from 1.5 x 10/sup -13/ cm/sup 2//p for the InGaAsP LED to 1.1 x 10/sup -10/ cm/sup 2//p for the amphoterically Si-doped GaAs LED.

Rose, B.H.; Barnes, C.E.

1982-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

High power light emitting diode based setup for photobleaching fluorescent impurities  

E-Print Network (OSTI)

High power light emitting diode based setup for photobleaching fluorescent impurities Tobias K be photobleached before final sample preparation. The instrument consists of high power light emitting diodes

Kaufman, Laura

82

ZnO-graphene Hybrid Quantum Dots Light Emitting Diode  

Science Conference Proceedings (OSTI)

Presentation Title, ZnO-graphene Hybrid Quantum Dots Light Emitting Diode. Author(s), Won Kook Choi, Dong-Ick Son, Soon-Nam Kwon. On-Site Speaker ...

83

Zinc Oxide and Nitride Nanowire Based Light Emitting Diodes  

E-Print Network (OSTI)

lumens/W, the LED beats the incandescent bulb and is on thefor an LED as opposed to an incandescent light bulb as shownbulb, fluorescent lamp, and blue light emitting diode. (24) (25) 2.2 LED

Lai, Elaine Michelle

2009-01-01T23:59:59.000Z

84

White light emitting diode as liquid crystal display backlight  

E-Print Network (OSTI)

The discovery of high brightness (white) light emitting diode (LED) is considered as a real threat to the current lighting industry in various applications. One of the most promising sectors would be using white LED to ...

Soon, Chian Myau

2007-01-01T23:59:59.000Z

85

The Impact of the Transient Response of 0rg;anic Light Emitting Diodes on the Design of Active Matrix OLED Displays  

E-Print Network (OSTI)

The Impact of the Transient Response of 0rg;anic Light Emitting Diodes on the Design of Active, Princeton, NJ, U.S.A. Abstract Much of the organic light emitting diode (OLED) characterization published

86

TRICOLOR LIGHT EMITTING DIODE DOT MATRIX DISPLAY SYSTEM WITHAUDIO OUTPUT  

E-Print Network (OSTI)

1 TRICOLOR LIGHT EMITTING DIODE DOT MATRIX DISPLAY SYSTEM WITHAUDIO OUTPUT Grantham Pang, Chi emitting diodes; tricolor display; audio communication. I. Introduction This paper relates to a tricolor broadcasting through the visible light rays transmitted by the display panel or assembly. Keywords: light

Pang, Grantham

87

Top-emission Si-based phosphor organic light emitting diode with Au doped ultrathin n-Si film anode and bottom Al mirror  

SciTech Connect

We report a highly efficient top-emission Si-based phosphor organic light emitting diode (PhOLED) with an ultrathin polycrystalline n-Si:Au film anode and a bottom Al mirror. This anode is formed by magnetron sputtering followed by Ni induced crystallization and then Au diffusion. By optimizing the thickness of the n-Si:Au film anode, the Au diffusion temperature, and the other parameters of the PhOLED, the highest current and power efficiencies of the n-Si:Au film anode PhOLED reached 85{+-}9 cd/A and 80{+-}8 lm/W, respectively, corresponding to an external quantum efficiency of 21{+-}2% and a power conversion efficiency of 15{+-}2%, respectively, which are about 60% and 110% higher than those of the indium tin oxide anode counterpart and 70% and 50% higher than those of the bulk n{sup +}-Si:Au anode counterpart, respectively.

Li, Y. Z.; Xu, W. J.; Ran, G. Z. [State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Qin, G. G. [State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Key Lab of Semiconductor Materials, CAS, Beijing 100083 (China)

2009-07-20T23:59:59.000Z

88

Nanofabrication of gallium nitride photonic crystal light-emitting diodes  

Science Conference Proceedings (OSTI)

We describe a comparison of nanofabrication technologies for the fabrication of 2D photonic crystal structures on GaN/InGaN blue LEDs. Such devices exhibit enhanced brightness and the possibility of controlling the angular emission profile of emitted ... Keywords: GaN dry-etching, Light-emitting diodes, Nanolithography, Photonic crystals

Ali Z. Khokhar; Keith Parsons; Graham Hubbard; Faiz Rahman; Douglas S. Macintyre; Chang Xiong; David Massoubre; Zheng Gong; Nigel P. Johnson; Richard M. De La Rue; Ian M. Watson; Erdan Gu; Martin D. Dawson; Steve J. Abbott; Martin D. B. Charlton; Martin Tillin

2010-11-01T23:59:59.000Z

89

Thermoelectrically Pumped Light-Emitting Diodes Operating above Unity Efficiency  

E-Print Network (OSTI)

A heated semiconductor light-emitting diode at low forward bias voltage V

Santhanam, Parthiban

90

Optical switching in midinfrared light-emitting diodes  

Science Conference Proceedings (OSTI)

We report on the optical quenching of electroluminescence in midinfrared light-emitting diodes operating at 3.0 ?m. The source is based on a symmetrical double heterostructure with large band offsets and is effectively switched off using coherent visible light.

A. Krier; V. V. Sherstnev; H. H. Gao; A. M. Monahov; G. Hill

2002-01-01T23:59:59.000Z

91

Modifying the organic/electrode interface in Organic Solar Cells (OSCs) and improving the efficiency of solution-processed phosphorescent Organic Light-Emitting Diodes (OLEDs)  

SciTech Connect

Organic semiconductors devices, such as, organic solar cells (OSCs), organic light-emitting diodes (OLEDs) and organic field-effect transistors (OFETs) have drawn increasing interest in recent decades. As organic materials are flexible, light weight, and potentially low-cost, organic semiconductor devices are considered to be an alternative to their inorganic counterparts. This dissertation will focus mainly on OSCs and OLEDs. As a clean and renewable energy source, the development of OSCs is very promising. Cells with 9.2% power conversion efficiency (PCE) were reported this year, compared to < 8% two years ago. OSCs belong to the so-called third generation solar cells and are still under development. While OLEDs are a more mature and better studied field, with commercial products already launched in the market, there are still several key issues: (1) the cost of OSCs/OLEDs is still high, largely due to the costly manufacturing processes; (2) the efficiency of OSCs/OLEDs needs to be improved; (3) the lifetime of OSCs/OLEDs is not sufficient compared to their inorganic counterparts; (4) the physics models of the behavior of the devices are not satisfactory. All these limitations invoke the demand for new organic materials, improved device architectures, low-cost fabrication methods, and better understanding of device physics. For OSCs, we attempted to improve the PCE by modifying the interlayer between active layer/metal. We found that ethylene glycol (EG) treated poly(3,4-ethylenedioxythiophene): polystyrenesulfonate (PEDOT: PSS) improves hole collection at the metal/polymer interface, furthermore it also affects the growth of the poly(3- hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) blends, making the phase segregation more favorable for charge collection. We then studied organic/inorganic tandem cells. We also investigated the effect of a thin LiF layer on the hole-collection of copper phthalocyanine (CuPc)/C70-based small molecular OSCs. A thin LiF layer serves typically as the electron injection layer in OLEDs and electron collection interlayer in the OSCs. However, several reports showed that it can also assist in holeinjection in OLEDs. Here we first demonstrate that it assists hole-collection in OSCs, which is more obvious after air-plasma treatment, and explore this intriguing dual role. For OLEDs, we focus on solution processing methods to fabricate highly efficient phosphorescent OLEDs. First, we investigated OLEDs with a polymer host matrix, and enhanced charge injection by adding hole- and electron-transport materials into the system. We also applied a hole-blocking and electron-transport material to prevent luminescence quenching by the cathode. Finally, we substituted the polymer host by a small molecule, to achieve more efficient solution processed small molecular OLEDs (SMOLEDs); this approach is cost-effective in comparison to the more common vacuum thermal evaporation. All these studies help us to better understand the underlying relationship between the organic semiconductor materials and the OSCs and OLEDs’ performance and will subsequently assist in further enhancing the efficiencies of OSCs and OLEDs. With better efficiency and longer lifetime, the OSCs and OLEDs will be competitive with their inorganic counterparts.

Xiao, Teng

2012-04-27T23:59:59.000Z

92

Low Voltage, Low Power Organic Light Emitting Transistors for AMOLED Displays  

SciTech Connect

Low voltage, low power dissipation, high aperture ratio organic light emitting transistors are demonstrated. The high level of performance is enabled by a carbon nanotube source electrode that permits integration of the drive transistor and the organic light emitting diode into an efficient single stacked device. Given the demonstrated performance, this technology could break the technical logjam holding back widespread deployment of active matrix organic light emitting displays at flat panel screen sizes.

McCarthy, M. A. [University of Florida, Gainesville; Liu, B. [University of Florida, Gainesville; Donoghue, E. P. [University of Florida, Gainesville; Kravchenko, Ivan I [ORNL; Kim, D. Y. [University of Florida, Gainesville; Reynolds, J. R. [University of Florida, Gainesville; So, Franky [University of Florida, Gainesville; Rinzler, A. G. [University of Florida, Gainesville

2011-01-01T23:59:59.000Z

93

A Comparison of Infrared Light Emitting Diodes (IR-LED) versus Infrared  

E-Print Network (OSTI)

B. Characteristics of a typical IR LED analogous to the typeLight Emitting Diodes (IR-LED) versus Infrared Helium-Neon (light emitting diode (IR-LED) to quantitatively measure fuel

Girard, James W.; Bogin, Gregory E; Mack, John Hunter; Chen, J-Y; Dibble, Rober W

2005-01-01T23:59:59.000Z

94

Multispectral imaging of the ocular fundus using light emitting diode illumination  

E-Print Network (OSTI)

Multispectral imaging of the ocular fundus using light emitting diode illumination N. L. Everdell,1 on light emitting diode LED illumination that produces multispectral optical images of the human ocular

Claridge, Ela

95

A description and evaluation of light-emitting diode displays for generation of visual stimuli*  

E-Print Network (OSTI)

A description and evaluation of light-emitting diode displays for generation of visual stimuli 53706 A description of the design and function of light-emitting diode (LED) display modules is given (Time, April 1972). Light-emitting diodes (L~Ds) are examples of these spin-offs, LED display devices

Massaro, Dominic

96

Solvent-enhanced dye diffusion in polymer thin films for polymer light-emitting diode application  

E-Print Network (OSTI)

Solvent-enhanced dye diffusion in polymer thin films for polymer light-emitting diode application-color (red, green, and blue) polymer light-emitting diode displays was investigated in detail. After local.1063/1.1806548] I. INTRODUCTION Polymer light-emitting diodes (PLEDs) have emerged as a very promising candidate

97

Room temperature 1.6 m electroluminescence from Ge light emitting diode on Si substrate  

E-Print Network (OSTI)

Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate Szu n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device.4670) Optical materials; (230.3670) Light-emitting diodes. References and links 1. L. C. Kimerling, "Silicon

Vuckovic, Jelena

98

Vertical Pillar-Superlattice Array and Graphene Hybrid Light Emitting Diodes  

E-Print Network (OSTI)

Vertical Pillar-Superlattice Array and Graphene Hybrid Light Emitting Diodes Jung Min Lee, Jae a class of light emitting diode (LED) with interesting mechanical, optical, and electrical characteristics, light-emitting diodes, 3D architectures, transparent electrodes V ertical arrays of one-dimensional (1D

Rogers, John A.

99

GaN light-emitting diodes with Archimedean lattice photonic crystals Aurlien David,a  

E-Print Network (OSTI)

GaN light-emitting diodes with Archimedean lattice photonic crystals Aurélien David,a Tetsuo Fujii 2005; published online 16 February 2006 We study GaN-based light emitting diodes incorporating light- emitting diodes LEDs , as they could extract the emitted light otherwise trapped inside

Recanati, Catherine

100

White emitting polyfluorene functionalized with azide hybridized on near-UV light emitting diode  

E-Print Network (OSTI)

White emitting polyfluorene functionalized with azide hybridized on near-UV light emitting diode generation using CdSe/ZnS core-shell nanocrystals hybridized with InGaN/GaN light emitting diodesGaN/conjugated polymer hybrid light-emitting diodes," Appl. Phys. Lett. 70, 2664-2666 (1997). 9. H. V. Demir, S

Demir, Hilmi Volkan

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Correlation between the Indium Tin Oxide morphology and the performances of polymer light-emitting diodes  

E-Print Network (OSTI)

: This paper reports on performance enhancement of polymer light-emitting diodes (PLEDs) based on poly(2,5-bis. Keywords : Polymer light emitting diode; Indium tin oxide; Atomic force microscopy; Rutherford backscattering spectroscopy 1. Introduction Polymer light-emitting diodes (PLEDs) have received worldwide

Paris-Sud XI, Université de

102

Point defect engineered Si sub-bandgap light-emitting diode  

E-Print Network (OSTI)

Point defect engineered Si sub-bandgap light-emitting diode Jiming Bao1 , Malek Tabbal1,2 , Taegon light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction.3670) Light-emitting diodes; (160.6000) Semiconductors; (130-0250) Optoelectronics. References and links 1. S

103

Loss of Quantum Efficiency in Green Light Emitting Diode Dies at Low Temperature  

E-Print Network (OSTI)

Loss of Quantum Efficiency in Green Light Emitting Diode Dies at Low Temperature Yufeng Li1,2 , Wei, photoluminescence and cathodoluminescence of GaInN/GaN multiple quantum well light emitting diode dies are analyzed and efficient pure green light emitting diodes (LEDs) are of high economic value. However, when the emission

Wetzel, Christian M.

104

Outdoor Light-Emitting Diode (LED) Digital Signage  

Science Conference Proceedings (OSTI)

Utilities have been supporting outdoor advertising companies and their traditional simple billboards for many years. The level of support these billboards needed was minimal because electricity for them was only used to power basic lighting technologies. The growth in the billboard industry combined with the explosion in available electronic and digital systems and the advancements made in light-emitting diodes (LEDs) has resulted in a new type of billboard8212the LED electronic billboard. Electronic bil...

2009-12-17T23:59:59.000Z

105

THE FABRICATION AND ANALYSIS OF QUANTUM-DOT THIN FILM LIGHT EMITTING DIODES FOR USE IN DISPLAYS TECHNOLOGIES.  

E-Print Network (OSTI)

??The quantum dot has many applications, one of which is the light emitting diode. Quantum dot light emitting diodes were fabricated for their use in… (more)

Pickering, Shawn

2011-01-01T23:59:59.000Z

106

High power light emitting diode based setup for photobleaching fluorescent impurities  

E-Print Network (OSTI)

High power light emitting diode based setup for photobleaching fluorescent impurities Tobias K be photobleached before final sample preparation. The instrument consists of high power light emitting diodes for simple photobleaching pur- poses, we designed a simple but efficient lighting system using light emitting

Kaufman, Laura

107

Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution  

E-Print Network (OSTI)

Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution Aurélien David of photonic crystal PhC -assisted gallium nitride light-emitting diodes LEDs to the existence of unextracted a promising but challenging solution towards efficient solid-state lighting. Conventional GaN-based light-emitting

Recanati, Catherine

108

High efficiency III-nitride light-emitting diodes  

DOE Patents (OSTI)

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

2013-05-28T23:59:59.000Z

109

Blue light emitting diode internal and injection efficiency  

Science Conference Proceedings (OSTI)

A simple experimental method of light emitting diode(LED) injection efficiency (IE) determination was suggested. IE and internal quantum efficiency(IQE) calculation is an actual and difficult problem in LED science. In this paper IE and IQE of blue LEDs were determined separately. The method is based on electroluminescence data fitting by the modified rate equation model. Efficiency droop caused by Auger recombination and poor injection were taken into account. Only one reasonable assumption was accepted during the calculations: IE tends to 1 at low current densities.

Ilya E. Titkov; Denis A. Sannikov; Young-Min Park; Joong-Kon Son

2012-01-01T23:59:59.000Z

110

spectroscopic techniques A Multi-Source Portable Light Emitting Diode Spectrofluorometer  

E-Print Network (OSTI)

spectroscopic techniques A Multi-Source Portable Light Emitting Diode Spectrofluorometer SAFWAN only 1.5 kg that uses multiple light emitting diodes (LEDs) as excitation sources was developed emitting diodes; LEDs; Animal forage; Excitation-emission matrices; EEM. INTRODUCTION Movement of chemical

111

Wire-shaped semiconductor light-emitting diodes for general-purpose lighting  

SciTech Connect

The object of this work is to develop and optimize a new type of light-emitting diode (LED) with a wire-shaped, cylindrical geometry.

Mauk, Michael G.

2002-10-28T23:59:59.000Z

112

Application of light emitting diodes as solid state light sources in analytical chemistry.  

E-Print Network (OSTI)

??Several analytical systems were developed with light emitting diodes (LEDs) as solid state light sources. With an LED as a light source, liquid core waveguide… (more)

Eom, In Yong

2005-01-01T23:59:59.000Z

113

Power control architectures for cold cathode fluorescent lamp and light emitting diode based light sources.  

E-Print Network (OSTI)

?? In this dissertation, two different energy efficient power supply topologies are introduced for controlling cold cathode fluorescent lamp (CCFL) and high-brightness light emitting diode… (more)

Doshi, Montu V.

2010-01-01T23:59:59.000Z

114

Shelf life of five meat products displayed under light emitting diode or fluorescent lighting.  

E-Print Network (OSTI)

??Light emitting diode (LED) and fluorescent (FLS) lighting effects on enhanced pork loin chops, beef longissimus dorsi and semimembranosus steaks, ground beef, and ground turkey… (more)

Steele, Kyle Stover

2011-01-01T23:59:59.000Z

115

Nanocrystalline Silicon Quantum Dot Light Emitting Diodes Using Metal Oxide Charge Transport Layers.  

E-Print Network (OSTI)

??Silicon-based lighting show promise for display and solid state lighting use. Here we demonstrate a novel thin film light emitting diode device using nanocrystalline silicon… (more)

Zhu, Jiayuan

2013-01-01T23:59:59.000Z

116

Semiconductor Nanocrystals-Based White Light Emitting Diodes  

Science Conference Proceedings (OSTI)

In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid state lighting, such as white light emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement could cut the ever-increasing energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, we highlight the recent progress in semiconductor nanocrystals-based WLEDs, compare different approaches for generating white light, and discuss the benefits and challenges of the solid state lighting technology.

Dai, Quanqin [ORNL; Hu, Michael Z. [ORNL; Duty, Chad E [ORNL

2010-01-01T23:59:59.000Z

117

Confocal microphotoluminescence of InGaN-based light-emitting diodes Koichi Okamoto,a  

E-Print Network (OSTI)

for conventional incandescent and fluorescent light bulbs.5 However, luminous efficacies of commercial white LEDsConfocal microphotoluminescence of InGaN-based light-emitting diodes Koichi Okamoto,a Akio Kaneta-well-structured light-emitting diodes LEDs with a yellow-green light 530 nm and an amber light 600 nm was measured

Okamoto, Koichi

118

Light Emitting Diode (LED) fiducial system: Setup and operation  

SciTech Connect

Streak cameras, either electronic or rotating mirror, are common diagnostic tools used to explore very fast phenomena. Often they are used to precisely time events or durations, and in most cases, it is important to have quality time marks on the film record. Many methods have been used to introduce time marks onto the film. Exploding bridge wires are frequently used, but they light up slowly and are difficult to read with consistent accuracy. It is also difficult to put more than a few bridge wires in the view of a camera slit, so there are only a few timing marks written to the film. In some cases the time scale on the film must be interpolated over long distances, creating a significant loss of accuracy. Interpolation is especially troublesome with those cameras that have a nonlinear sweep rate. Spark gaps located on the camera slit turn on a bit faster, but suffer from the same interpolation induced errors. A series of short duration laser pulses, accurately timed and introduced along the edges of the film, is a very fine solution. The problem with such a laser fiducial system is that the lasers are very expensive and difficult to maintain. There has been a need for many years for an inexpensive, very bright light source that can be repetitively pulsed accurately and with short duration. Various technologies have sufficiently developed over the past few years, allowing us to build a fiducial system based on light emitting diodes (LED) for the Cordin rotating mirror streak cameras.

Muelder, S.A.

1995-01-01T23:59:59.000Z

119

City of Phildelphia: Light emitting diodes for traffic signal displays  

SciTech Connect

This project investigated the feasibility of using light emitting diodes (LEDs) for red traffic signals in a demonstration program at 27 signalized intersections in the City of Philadelphia. LED traffic signals have the potential to achieve significant savings over standard incandescent signals in terms of energy usage and costs, signal relamping costs, signal system maintenance costs, tort liability, and environmental impact. Based on successful experience with the demonstration program, the City of Philadelphia is currently developing funding for the conversion of all existing red incandescent traffic signals at approximately 2,700 intersections to LED signals. This program is expected to cost approximately $4.0 million and save about $850,000 annually in energy costs. During late 1993 and early 1994, 212 red LED traffic signals (134 8-inch signals and 78 12-inch signals) were installed at 27 intersections in Philadelphia. The first group of 93 signals were installed at 13 prototypical intersections throughout the City. The remaining group of signals were installed on a contiguous route in West Philadelphia consisting of standard incandescent signals and LED signals interspersed in a random pattern.

1995-12-01T23:59:59.000Z

120

White Light Emitting Diode Development for General Illumination Applications  

SciTech Connect

This report contains a summary of technical achievements during a 3-year project aimed at developing the chip and packaging technology necessary to demonstrate efficient, high flux light-emitting diode (LED) arrays using Cree's gallium nitride/silicon carbide (GaN/SiC) LED technology as the starting point. Novel chip designs and fabrication processes are described that led to high power blue LEDs that achieved 310 mW of light output at 350 mA drive current, corresponding to quantum and wall plug efficiencies of 32.5% and 26.5%, respectively. When combined with phosphor, high power white LEDs with luminous output of 67 lumens and efficacy of 57 lumens per watt were also demonstrated. Advances in packaging technology are described that enabled compact, multi-chip white LED lamp modules with 800-1000 lumens output at efficacies of up to 55 lumens per watt. Lamp modules with junction-to-ambient thermal resistance as low as 1.7 C/watt have also been demonstrated.

James Ibbetson

2006-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN  

E-Print Network (OSTI)

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN Christian in green light emitting diodes is one of the big challenges towards all-solid- state lighting. The prime,3], and commercialization [4,5] of high brightness light emitting diodes LEDs has led to a 1.82 Billion-$/year world market

Detchprohm, Theeradetch

122

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network (OSTI)

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

123

Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract--Semiconductor nanocrystal quantum dots (NQD)  

E-Print Network (OSTI)

Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract-- Semiconductor nanocrystal convertors integrated on light-emitting diodes (LEDs). The use of nonradiative energy transfer, also known-LEDs for lighting applications. Index Terms-- Förster resonance energy transfer, light emitting diode, nanocrystal

Demir, Hilmi Volkan

124

Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic crystal  

E-Print Network (OSTI)

Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic 21 November 2003 We demonstrate a light-emitting diode exhibiting 1.7­2.7-fold enhancement in light light emitting diode LED , the ef- ficiency is limited to several percents by a low light extrac- tion

Baba, Toshihiko

125

Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes  

E-Print Network (OSTI)

of light emitting diodes Ronald A. Arif, Yik-Khoon Ee, and Nelson Tansu Citation: Appl. Phys. Lett. 91 extraction in GaN-based light emitting diodes Appl. Phys. Lett. 100, 061107 (2012) Electrically driven nanopyramid green light emitting diode Appl. Phys. Lett. 100, 061106 (2012) Ultraviolet electroluminescence

Gilchrist, James F.

126

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures  

E-Print Network (OSTI)

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode and GaInN/GaN heterostructures typically used for high efficiency light emitting diodes is of high materials for green, blue, and UV light emitting diodes (LED) [1-2]. It is known that huge piezoelectric

Wetzel, Christian M.

127

Coupling Fibers to Semiconductor Sources To learn to couple an injection laser diode (ILD) and a light emitting diode  

E-Print Network (OSTI)

) and a light emitting diode (LED) to an optical fiber. Equipment: · 1 ~ 2 meters of F-MLD-50 multimode fiber off any other part of the circuit. Light Emitting Diode- 1.) Post mount the LED assembly the same way

Collins, Gary S.

128

passivation of InGaN/GaN nanopillar light emitting diodes.  

E-Print Network (OSTI)

??Recently, InGaN/GaN based blue light emitting diodes (LEDs) have become widely available commercially, but their efficiency is reduced due to the quantum confined Stark effect… (more)

Choi, Won

2013-01-01T23:59:59.000Z

129

A strategy for the use of light emitting diodes by autonomous underwater vehicles  

E-Print Network (OSTI)

Light Emitting Diode (LED) technology has advanced dramatically in a few short years. An expensive and difficult to manufacture LED array containing nearly 100 individual LEDs and measuring at least 5 cm² can now be replaced ...

Curran, Joseph R. (Joseph Robinson)

2004-01-01T23:59:59.000Z

130

Tailoring optical properties of light-emitting diodes by nanostructuring with nanospheres.  

E-Print Network (OSTI)

???III-V nitride based light-emitting diodes (LEDs) have experienced rapid developments during past decade, proving their potential to substitute conventional incandescent bulbs and fluorescent lamps to… (more)

??

2012-01-01T23:59:59.000Z

131

Colloidal semiconductor nanocrystals as nanoscale emissive probes in light emitting diodes and cell biology  

E-Print Network (OSTI)

This thesis employs colloidal semiconductor nanocrystals (NCs) as nanoscale emissive probes to investigate the physics of light emitting diodes (LEDs), as well as to unveil properties of cells that conventional imaging ...

Huang, Hao, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

132

Developing quantum dot phosphor-based light-emitting diodes for aviation lighting applications  

Science Conference Proceedings (OSTI)

We have investigated the feasibility of employing quantum dot (QD) phosphor-based light-emitting diodes (LEDs) in aviation applications that request Night Vision Imaging Systems (NVIS) compliance. Our studies suggest that the emerging QD phosphorbased ...

Fengbing Wu; Dawei Zhang; Shuzhen Shang; Yiming Zhu; Songlin Zhuang; Jian Xu

2012-01-01T23:59:59.000Z

133

Package of Homojunction of Fully Conjugated Heterocyclic Aromatic Rigid-rod Polymer Light Emitting Diodes.  

E-Print Network (OSTI)

??The focus of this study is mono-layer polymer light emitting diode (PLED). The emitting layer is poly-p-phenylenebenzobisoxazole (PBO). PBO is a fully conjugated heterocyclic aromatic… (more)

Liao, Hung-chi

2004-01-01T23:59:59.000Z

134

Efficiency loss mechanisms in colloidal quantum-dot light-emitting diodes  

E-Print Network (OSTI)

Saturated and tunable emission colors make colloidal quantum-dot light-emitting diodes (QD-LEDs) interesting for the next generation of display and lighting technologies. However, there still remain various hurdles to the ...

Shirasaki, Yasuhiro

2013-01-01T23:59:59.000Z

135

Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes  

E-Print Network (OSTI)

We report what we believe to be the first demonstration of direct bandgap electroluminescence (EL) from Ge/Si heterojunction light-emitting diodes (LEDs) at room temperature. In-plane biaxial tensile strain is used to ...

Sun, Xiaochen

136

Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes  

E-Print Network (OSTI)

Keywords: GaInN/GaN Light emitting diode temperature Micro-Raman Photoluminescence Electroluminescence well light emitting diode (LED) dies is analyzed by micro-Raman, photoluminescence, cathodoluminescenceJunction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting

Wetzel, Christian M.

137

Thickness-dependent changes in the optical properties of PPV-and PF-based polymer light emitting diodes  

E-Print Network (OSTI)

the thickness-dependent optical properties of single layer polymer light emitting diodes for two materials, poly the electronic and optical properties of these materials in light emitting diode LED structures.2 OurThickness-dependent changes in the optical properties of PPV- and PF-based polymer light emitting

Carter, Sue

138

Method and apparatus for improving the performance of light emitting diodes  

DOE Patents (OSTI)

A method for increasing the resistance of a light emitting diode and other semiconductor devices to extremes of temperature is disclosed. During the manufacture of the light emitting diode, a liquid coating is applied to the light emitting die after the die has been placed in its lead frame. After the liquid coating has been placed on the die and its lead frames, a thermosetting encapsulant material is placed over the coating. The operation that cures the thermosetting material leaves the coating liquid intact. As the die and the encapsulant expand and contract at different rates with respect to changes in temperature, and as in known light emitting diodes the encapsulating material adheres to the die and lead frames, this liquid coating reduces the stresses that these different rates of expansion and contraction normally cause by eliminating the adherence of the encapsulating material to the die and frame.

Lowery, Christopher H. (Fremont, CA); McElfresh, David K. (Union City, CA); Burchet, Steve (Cedar Crest, NM); Adolf, Douglas B. (Albuquerque, NM); Martin, James (Tijeras, NM)

1996-01-01T23:59:59.000Z

139

Optimization of light emitting diodes based on bipolar double-barrier resonant-tunneling structures  

Science Conference Proceedings (OSTI)

A bipolar double-barrier resonant-tunneling light emitting diode will have maximum emitted light intensity if (1) electrons and holes simultaneously resonant-tunnel into the quantum well, (2) the charge carriers are entirely trapped in the well as the ... Keywords: Poisson equation, Schrodinger equation, automated computer code, bipolar double-barrier RTD structures, charge carriers, chemical compositions, doping profiles, electroluminescence, electroluminescence spectrum profile, electron-hole recombination, electron-hole recombination rate, geometric structures, light emitting diodes, near zero-field condition, optimisation, quantum well, resonant tunnelling diodes, resonant-tunneling LED, semiconductor device models, semiconductor quantum wells, temperature stability, theoretical modeling, thermal stability

A. Kindlihagen; K. A. Chao; M. Willander; J. Genoe

1995-11-01T23:59:59.000Z

140

Organic light emitting device having multiple separate emissive layers  

DOE Patents (OSTI)

An organic light emitting device having multiple separate emissive layers is provided. Each emissive layer may define an exciton formation region, allowing exciton formation to occur across the entire emissive region. By aligning the energy levels of each emissive layer with the adjacent emissive layers, exciton formation in each layer may be improved. Devices incorporating multiple emissive layers with multiple exciton formation regions may exhibit improved performance, including internal quantum efficiencies of up to 100%.

Forrest, Stephen R. (Ann Arbor, MI)

2012-03-27T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Photonic crystal laser lift-off GaN light-emitting diodes Aurlien David,a  

E-Print Network (OSTI)

Photonic crystal laser lift-off GaN light-emitting diodes Aurélien David,a Tetsuo Fujii,b Brendan March 2006 We report on the fabrication and study of laser lift-off GaN-based light-emitting diodes-state lighting. However, as is the case for any light-emitting diode LED , light tends to be trapped in the high

Recanati, Catherine

142

DOE Science Showcase - Light-emitting Diode (LED) Lighting Research | OSTI,  

Office of Scientific and Technical Information (OSTI)

Science Showcase - Light-emitting Diode (LED) Lighting Research Science Showcase - Light-emitting Diode (LED) Lighting Research Light-emitting diode (LED) lighting is a type of solid-state lighting that uses a semiconductor to convert electricity to light. LED lighting products are beginning to appear in a wide variety of home, business, and industrial products such as holiday lighting, replacement bulbs for incandescent lamps, street lighting, outdoor area lighting and indoor ambient lighting. Over the past decade, LED technology research and development supported by the U.S. Department of Energy (DOE) has yielded impressive improvements in the cost, color performance, light output, efficacy, reliability, lifetime, and manufacturability of LED products and this upward trend is expected to continue. Read about the latest DOE research, the technology behind LEDs,

143

Energy Savings Estimates of Light Emitting Diodes in Niche Lighting Applications  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Savings Estimates of Light Emitting Diodes Savings Estimates of Light Emitting Diodes in Niche Lighting Applications Prepared for: Building Technologies Program Office of Energy Efficiency and Renewable Energy U.S. Department of Energy Prepared by: Navigant Consulting Inc. 1801 K Street, NW Suite 500 Washington DC, 20006 September 2008 * Department of Energy Washington, DC 20585 Energy Savings Estimates of Light Emitting Diodes in Niche Lighting Applications Released: September 2008 Revised: October 2008 This DOE report presents research findings for twelve different niche markets where LEDs are competing or poised to compete with traditional light sources (e.g., incandescent and fluorescent). Estimates of the energy saved due to current levels of LED market penetration as well as estimates of potential energy savings if these markets switched completely to LEDs

144

Green Light-Emitting Diode Makes Highly Efficient White Light; The Spectrum of Clean Energy Innovation (Fact Sheet)  

SciTech Connect

Fact sheet describing NREL's green light emitting diode that can lead to higher efficiency white light used in indoor lighting applications.

2010-06-01T23:59:59.000Z

145

Demonstration Assessment of Light-Emitting Diode Roadway Lighting on the FDR Drive in New York, New York  

SciTech Connect

This a report about a field study of light-emitting diodes street lights by four different manufacturers installed on the FDR Drive in New York City, NY.

Myer, Michael; Hazra, Oindrila; Kinzey, Bruce R.

2011-12-01T23:59:59.000Z

146

Matrix-addressable III-nitride light emitting diode arrays on silicon substrates by flip-chip technology.  

E-Print Network (OSTI)

??xiv, 81 leaves : ill. ; 30 cm HKUST Call Number: Thesis ECED 2007 Keung Matrix-addressable light emitting diode (LED) micro-arrays on sapphire substrates have… (more)

Keung, Chi Wing

2007-01-01T23:59:59.000Z

147

The Effect of Light Emitting Diode Phototherapy on the Rate of Orthodontic Tooth Movement - A Clinical Study.  

E-Print Network (OSTI)

??Increasing the rate of orthodontic tooth movement (OTM) can reduce risks such as periodontal disease and caries. This study investigated whether light emitting diode (LED)… (more)

Chung, Sean

2013-01-01T23:59:59.000Z

148

SciTech Connect: "light emitting diode"  

Office of Scientific and Technical Information (OSTI)

"light emitting diode" Find "light emitting diode" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office,

149

Detection of Single Molecules Illuminated by a Light-Emitting Diode  

E-Print Network (OSTI)

Optical detection and spectroscopy of single molecules has become an indispensable tool in biological imaging and sensing. Its success is based on fluorescence of organic dye molecules under carefully engineered laser illumination. In this paper we demonstrate optical detection of single molecules on a wide-field microscope with an illumination based on a commercially available, green light-emitting diode. The results are directly compared with laser illumination in the same experimental configuration. The setup and the limiting factors, such as light transfer to the sample, spectral filtering and the resulting signal-to-noise ratio are discussed. A theoretical and an experimental approach to estimate these parameters are presented. The results can be adapted to other single emitter and illumination schemes.

Ilja Gerhardt; Lijian Mai; Antia Lamas-Linares; Christian Kurtsiefer

2011-01-14T23:59:59.000Z

150

Understanding Drooping Light Emitting Diodes CEEM | U.S. DOE Office of  

Office of Science (SC) Website

Understanding Drooping Light Emitting Understanding Drooping Light Emitting Diodes CEEM Energy Frontier Research Centers (EFRCs) EFRCs Home Centers Research Science Highlights Highlight Archives News & Events Publications Contact BES Home 04.27.12 Understanding Drooping Light Emitting Diodes CEEM Print Text Size: A A A RSS Feeds FeedbackShare Page Scientific Achievement New calculations demonstrate that LED "droop" is dominated by multi-particle interactions. Droop occurs when increasing energy input does not produce proportionally more light. Significance and Impact Understanding "droop" may result in cheaper, more efficient LEDs; LEDs are more energy efficient, smaller, and longer-lived than incandescent lamps or fluorescent lighting. Research Details Atomistic first-principles calculations indicated that increasing amounts

151

Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al{sub 2}O{sub 3} films and Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks  

SciTech Connect

Al{sub 2}O{sub 3} thin films synthesized by plasma-enhanced atomic layer deposition (ALD) at room temperature (25 deg. C) have been tested as water vapor permeation barriers for organic light emitting diode devices. Silicon nitride films (a-SiN{sub x}:H) deposited by plasma-enhanced chemical vapor deposition served as reference and were used to develop Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks. On the basis of Ca test measurements, a very low intrinsic water vapor transmission rate of {<=} 2 x 10{sup -6} g m{sup -2} day{sup -1} and 4 x 10{sup -6} g m{sup -2} day{sup -1} (20 deg. C/50% relative humidity) were found for 20-40 nm Al{sub 2}O{sub 3} and 300 nm a-SiN{sub x}:H films, respectively. The cathode particle coverage was a factor of 4 better for the Al{sub 2}O{sub 3} films compared to the a-SiN{sub x}:H films and an average of 0.12 defects per cm{sup 2} was obtained for a stack consisting of three barrier layers (Al{sub 2}O{sub 3}/a-SiN{sub x}:H/Al{sub 2}O{sub 3}).

Keuning, W.; Weijer, P. van de; Lifka, H.; Kessels, W. M. M.; Creatore, M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Philips Research Laboratories, High Tech Campus 4, P.O. Box WAG12, 5656 AE Eindhoven (Netherlands); Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

2012-01-15T23:59:59.000Z

152

Tunnel junction multiple wavelength light-emitting diodes  

DOE Patents (OSTI)

A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect. 5 figs.

Olson, J.M.; Kurtz, S.R.

1992-11-24T23:59:59.000Z

153

Tunnel junction multiple wavelength light-emitting diodes  

DOE Patents (OSTI)

A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

Olson, Jerry M. (Lakewood, CO); Kurtz, Sarah R. (Golden, CO)

1992-01-01T23:59:59.000Z

154

Medical Applications of Space Light-Emitting Diode Technology--Space Station and Beyond  

SciTech Connect

Space light-emitting diode (LED) technology has provided medicine with a new tool capable of delivering light deep into tissues of the body, at wavelengths which are biologically optimal for cancer treatment and wound healing. This LED technology has already flown on Space Shuttle missions, and shows promise for wound healing applications of benefit to Space Station astronauts.

Whelan, H.T.; Houle, J.M.; Donohoe, D.L.; Bajic, D.M.; Schmidt, M.H.; Reichert, K.W.; Weyenberg, G.T.; Larson, D.L.; Meyer, G.A.; Caviness, J.A.

1999-06-01T23:59:59.000Z

155

Potential Environmental Impacts from the Metals in Incandescent, Compact Fluorescent Lamp (CFL), and Light-Emitting Diode (LED)  

E-Print Network (OSTI)

), and Light-Emitting Diode (LED) Bulbs Seong-Rin Lim, Daniel Kang, Oladele A. Ogunseitan,,§ and Julie M sources with compact fluorescent lamp (CFL) and light-emitting diode (LED) bulbs that use about 70% and 85 lighting systems are transitioning from incandes- cent to compact fluorescent lamp (CFL) and light

Short, Daniel

156

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes  

E-Print Network (OSTI)

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes]. The detail of the model for current injection model for quantum well heterostructure is described in Ref. [18 Keywords: III-Nitride InGaN QWs Light-emitting diodes Efficiency-droop a b s t r a c t Current injection

Gilchrist, James F.

157

Semiconductor-Nanocrystals-Based White Light-Emitting Diodes  

Science Conference Proceedings (OSTI)

In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white lightemitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

Dai, Quanqin [ORNL; Duty, Chad E [ORNL; Hu, Michael Z. [ORNL

2010-01-01T23:59:59.000Z

158

Organic light-emitting devices using spin-dependent processes  

DOE Patents (OSTI)

The maximum luminous efficiency of organic light-emitting materials is increased through spin-dependent processing. The technique is applicable to all electro-luminescent processes in which light is produced by singlet exciton decay, and all devices which use such effects, including LEDs, super-radiant devices, amplified stimulated emission devices, lasers, other optical microcavity devices, electrically pumped optical amplifiers, and phosphorescence (Ph) based light emitting devices. In preferred embodiments, the emissive material is doped with an impurity, or otherwise modified, to increase the spin-lattice relaxation rate (i.e., decrease the spin-lattice time), and hence raise the efficiency of the device. The material may be a polymer, oligomer, small molecule, single crystal, molecular crystal, or fullerene. The impurity is preferably a magnetic or paramagnetic substance. The invention is applicable to IR, UV, and other electromagnetic radiation generation and is thus not limited to the visible region of the spectrum. The methods of the invention may also be combined with other techniques used to improve device performance.

Vardeny, Z. Valy (Salt Lake City, UT); Wohlgenannt, Markus (Salt Lake City, UT)

2010-03-23T23:59:59.000Z

159

Enhanced performance of organic light-emitting diodes (OLEDs) and OLED-based photoluminescent sensing platforms by novel microstructures and device architectures  

SciTech Connect

After a general introduction to OLEDs and OLED-based PL sensors, the transient emission mechanism of guest-host OLEDs is described both experimentally and theoretically. A monolithic and easy-to-apply process is demonstrated for fabricating multicolor microcavity OLEDs (that improve the sensor platform). The outcoupling issues of OLEDs at the substrate/air interface are addressed by using a microstructured polymer film resulting from a PS and polyethylene glycol (PEG) mixture. Based on the understanding of OLEDs and their improvement, research was done in order to realize integrated all organic-based O{sub 2} and pH sensors with improved signal intensity and sensitivity. The sensor design modification and optimization are summarized

Liu, Rui [Ames Laboratory

2012-08-01T23:59:59.000Z

160

Low Power, Red, Green and Blue Carbon Nanotube Enabled Vertical Organic Light Emitting Transistors for Active Matrix OLED Displays  

SciTech Connect

Organic semiconductors are potential alternatives to polycrystalline silicon as the semiconductor used in the backplane of active matrix organic light emitting diode displays. Demonstrated here is a light-emitting transistor with an organic channel, operating with low power dissipation at low voltage, and high aperture ratio, in three colors: red, green and blue. The single-wall carbon nanotube network source electrode is responsible for the high level of performance demonstrated. A major benefit enabled by this architecture is the integration of the drive transistor, storage capacitor and light emitter into a single device. Performance comparable to commercialized polycrystalline-silicon TFT driven OLEDs is demonstrated.

McCarthy, M. A. [University of Florida, Gainesville; Liu, B. [University of Florida, Gainesville; Donoghue, E. P. [University of Florida, Gainesville; Kravchenko, Ivan I [ORNL; Kim, D. Y. [University of Florida, Gainesville; So, Franky [University of Florida, Gainesville; Rinzler, A. G. [University of Florida, Gainesville

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

SciTech Connect: "light emitting diodes"  

Office of Scientific and Technical Information (OSTI)

light emitting diodes" Find light emitting diodes" Find How should I search Scitech Connect ... Basic or Advanced? Basic Search Advanced × Advanced Search Options Full Text: Bibliographic Data: Creator / Author: Name Name ORCID Title: Subject: Identifier Numbers: Research Org.: Sponsoring Org.: Site: All Alaska Power Administration, Juneau, Alaska (United States) Albany Research Center (ARC), Albany, OR (United States) Albuquerque Complex - NNSA Albuquerque Operations Office, Albuquerque, NM (United States) Amarillo National Resource Center for Plutonium, Amarillo, TX (United States) Ames Laboratory (AMES), Ames, IA (United States) Argonne National Laboratory (ANL), Argonne, IL (United States) Argonne National Laboratory-Advanced Photon Source (United States) Atlanta Regional Office, Atlanta, GA (United States) Atmospheric Radiation Measurement (ARM)

162

An Engineering-Economic Analysis of White Light-Emitting Diodes for General  

NLE Websites -- All DOE Office Websites (Extended Search)

An Engineering-Economic Analysis of White Light-Emitting Diodes for General An Engineering-Economic Analysis of White Light-Emitting Diodes for General Illumination for the U.S. Residential and Commercial Sectors Speaker(s): Inês Magarida Lima de Azevedo Date: February 15, 2008 - 12:00pm Location: 90-3122 Because lighting constitutes more than 20% of total US electricity consumption, and many current lighting technologies are highly inefficient, improved technologies for lighting hold great potential for energy savings and for reducing associated greenhouse gas emissions. Solid-state lighting is a technology that shows great promise as a source of efficient, affordable, color-balanced white light in the near future. Indeed, under a pure engineering-economic analysis, solid-state lighting already performs better than incandescent bulbs and is expected to surpass the most

163

C. Wetzel et al MRS Internet J. Nitride Semicond. Res. 10, 2 (2005) 1 Development of High Power Green Light Emitting Diode Chips  

E-Print Network (OSTI)

Power Green Light Emitting Diode Chips C. Wetzel and T. Detchprohm Future Chips Constellation Abstract The development of high emission power green light emitting diodes chips using GaInN/GaN multi production-scale implementation of this green LED die process. Keywords: nitrides, light emitting diode

Wetzel, Christian M.

164

Conference 5739, SPIE International Symposium Integrated Optoelectronic Devices, 22-27 Jan 2005, San Jose, CA Development of high power green light emitting diode dies in  

E-Print Network (OSTI)

, San Jose, CA Development of high power green light emitting diode dies in piezoelectric Ga in green light emitting diodes is one of the big challenges towards all-solid- state lighting. The prime,3], and commercialization [4,5] of high brightness light emitting diodes LEDs has led to a 1.82 Billion-$/year world market

Wetzel, Christian M.

165

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520525 nm employing graded growth-temperature profile  

E-Print Network (OSTI)

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520­525 nm employing current spreading and light extraction in GaN-based light emitting diodes Appl. Phys. Lett. 100, 061107 (2012) Electrically driven nanopyramid green light emitting diode Appl. Phys. Lett. 100, 061106 (2012

Gilchrist, James F.

166

InP-Based Oxide-Confined 16 p.m Microcavity Light Emitting Diodes Weidong Zhou, Omar Qasaimeh, and Pallab Bhattacharya  

E-Print Network (OSTI)

InP-Based Oxide-Confined 16 p.m Microcavity Light Emitting Diodes Weidong Zhou, Omar Qasaimeh light emitting diodes (MCLEDs) have been designed, fabricated and characterized. Oxide- confined MCLEDs region emission peak and cavity resonance peak. Key words: Microcavity light emitting diode (MCLED), wet

Zhou, Weidong

167

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures  

E-Print Network (OSTI)

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures, U.S.A. ABSTRACT Characterization of operational AlGaInN heterostructure light emitting diodes (LEDs the device lifetime in a non-destructive mode. INTRODUCTION Group ­ III nitride light emitting diodes (LEDs

Wetzel, Christian M.

168

The use of LEDS (light-emitting diode) to simulate weak YAG-laser beams  

SciTech Connect

The purpose of this report is to determine whether and under what conditions a light-emitting diode may be used to simulate a weak YAG-laser beam that has been scattered by a distant reflecting object. By examining the differences between laser radiation and LED radiation, the author concludes that there is no theoretical reason that a LED may not be used in place of the laser beam.

Young, M.

1981-01-01T23:59:59.000Z

169

Comparing Light Emitting Diode (LED) Street and Area Lighting to Traditional Lighting Technologies  

Science Conference Proceedings (OSTI)

High-power light-emitting diode (LED) technology holds great promise for outdoor illumination. This case study discusses the results of the LED Street and Area Lighting Demonstration performed by Tennessee Valley Authority (TVA), Knoxville Utilities Board (KUB), and EPRI. Data was collected on Wall Avenue, a busy thoroughfare in downtown Knoxville, using a specially developed computer-controlled mobile light measurement vehicle with a global positioning system.Early reports from the ...

2012-09-28T23:59:59.000Z

170

Comparing Light-Emitting Diode (LED) Street and Area Lighting to Traditional Lighting Technologies  

Science Conference Proceedings (OSTI)

Manufacturing advances have now made the use of light-emitting diode (LED) technology practical for street and area lighting. To better understand the application, the Electric Power Research Institute (EPRI) teamed with Southern Company and Alabama Power to install LED street lights at a demonstration site and measure the performance. The data showed several disadvantages such as a lower efficacy compared to traditional technology and lower immunity to electrical disturbances, but advantages in energy s...

2012-04-20T23:59:59.000Z

171

Comparing Light-Emitting Diode (LED) Street and Area Lighting to Traditional Lighting Technologies  

Science Conference Proceedings (OSTI)

Manufacturing advances have now made the use of light-emitting diode (LED) technology practical for street and area lighting. To better understand the application, the Electric Power Research Institute (EPRI) teamed with Southern Company and Gulf Power to install LED street lights at a demonstration site and measure their performance. The data showed several disadvantages for the LED lights, such as a lower efficacy compared to traditional technology and lower immunity to electrical disturbances, but an ...

2012-04-06T23:59:59.000Z

172

Photoionization of optically trapped ultracold atoms with a high-power light-emitting diode  

SciTech Connect

Photoionization of laser-cooled atoms using short pulses of a high-power light-emitting diode (LED) is demonstrated. Light pulses as short as 30 ns have been realized with the simple LED driver circuit. We measure the ionization cross section of {sup 85}Rb atoms in the first excited state, and show how this technique can be used for calibrating efficiencies of ion detector assemblies.

Goetz, Simone; Hoeltkemeier, Bastian; Amthor, Thomas; Weidemueller, Matthias [Physikalisches Institut, Universitaet Heidelberg, Im Neuenheimer Feld 226, 69120 Heidelberg (Germany)

2013-04-15T23:59:59.000Z

173

Improved Cognitive Function After Transcranial, Light-Emitting Diode Treatments in Chronic, Traumatic Brain Injury: Two Case Reports  

E-Print Network (OSTI)

Objective: Two chronic, traumatic brain injury (TBI) cases, where cognition improved following treatment with red and near-infrared light-emitting diodes (LEDs), applied transcranially to forehead and scalp areas, are ...

Naeser, Margaret A.

174

Demonstration Assessment of Light-Emitting Diode (LED) Accent Lighting at the Field Museum in Chicago, IL  

SciTech Connect

This report reviews a demonstration of light-emitting diode (LED) accent lighting compared to halogen (typical) accent lighting in a gallery of the Field Museum in Chicago, IL.

Myer, Michael; Kinzey, Bruce R.

2010-12-10T23:59:59.000Z

175

AlGaInN-based light emitting diodes with a transparent p-contact based on thin ITO films  

SciTech Connect

A method for obtaining transparent conductive ITO (indium-tin oxide) films aimed for use in light emitting diodes of the blue spectral range is developed. The peak external quantum efficiency of light-emitting diodes with a p-contact based on the obtained films reaches 25%, while for similar light-emitting diodes with a standard semitransparent metal contact, it is <10%. An observed increase in the direct voltage drop from 3.15 to 3.37 V does not significantly affect the possibility of applying these films in light-emitting diodes since the optical power of light-emitting diodes with a transparent p-contact based on ITO films exceeds that of chips with metal semitransparent p-contacts with a working current of 20 mA by a factor of almost 2.5. Light-emitting diodes with p-contacts based on ITO films successfully withstand a pumping current that exceeds their calculated working current by a factor of 5 without the appearance of any signs of degradation.

Smirnova, I. P., E-mail: irina@quantum.ioffe.ru; Markov, L. K.; Pavlyuchenko, A. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Kukushkin, M. V. [ZAO Innovation Company 'TETIS' (Russian Federation)

2012-03-15T23:59:59.000Z

176

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm, Mingwei Zhu  

E-Print Network (OSTI)

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm in nonpolar light-emitting diodes (LEDs) covering the blue to green spectral range. In photo- luminescence, m's overall power efficiency. Linearly polarized light can be efficiently generated in GaInN/GaN-based light-emitting

Wetzel, Christian M.

177

Design of an efficient light-emitting diode with 10 GHz modulation bandwidth  

Science Conference Proceedings (OSTI)

We present a high-speed light-emitting-diode (LED) design for efficient modulation at speeds higher than 10 GHz. It relies on a tensile-strain GaAsPquantum well coupled with surface plasmon polaritons on a silversurface. We present optical pumping experiments showing a tenfold reduction in carrier lifetime when the quantum well is located 40 nm above the silversurface. We believe this represents the first step toward an efficient LED compatible with 10 GHz modulation speed for use in short distance optical communication systems.

D. Fattal; M. Fiorentino; M. Tan; D. Houng; S. Y. Wang; Raymond G. Beausoleil

2008-01-01T23:59:59.000Z

178

Amorphous silicon as electron transport layer for colloidal semiconductor nanocrystals light emitting diode  

Science Conference Proceedings (OSTI)

We demonstrate the fabrication of light-emitting diodes (LEDs) made from all-inorganic colloidal semiconducting nanocrystals (NCs). The diode utilizes a sandwich structure formed by placing CdSe/CdS NCs between two layers of Si and Ag{sub x}O, which act as electron- and hole-transporting materials, respectively. The photoluminescence properties of NCs are rendered less dependent upon surface chemistry and chemical environment by growing a thick CdS shell. It also enhances stability of the NCs during the process of magnetron sputtering for silicon deposition. The resulting LED device exhibits a low turn-on voltage of 2.5 V and the maximum external quantum efficiency of nearly 0.08%.

Song Tao; Shen Xiaojuan; Sun Baoquan [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Functional Nano and Soft Materials Laboratory (FUNSOM), Soochow University, 199 Ren'ai Road, Suzhou 215123 (China); Zhang Fute [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Functional Nano and Soft Materials Laboratory (FUNSOM), Soochow University, 199 Ren'ai Road, Suzhou 215123 (China); Key Laboratory of Organic Synthesis of Jiangsu Province, School of Chemistry and Chemical Engineering, Soochow University, Suzhou 215123 (China); Zhang Xiaohong [Nano-Organic Photoelectronic Laboratory and Laboratory of Organic Optoelectronic Functional Materials and Molecular Engineering, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Zhu Xiulin [Key Laboratory of Organic Synthesis of Jiangsu Province, School of Chemistry and Chemical Engineering, Soochow University, Suzhou 215123 (China)

2009-12-07T23:59:59.000Z

179

Effective hole-injection layer for non-doped inverted top-emitting organic light-emitting devices  

Science Conference Proceedings (OSTI)

Non-doped inverted top-emitting organic light-emitting diode with high efficiency is demonstrated through employing an effective hole-injection layer composed of MoO"x. One reason for high efficiency lies on the energy-level matching between MoO"x and ... Keywords: 78.60.Fi, 82.45.Mp, 85.60.Jb, Hole-injection, ITEOLEDs, MoOx

Yanlong Meng; Wenfa Xie; Ning Zhang; Shufen Chen; Jiang Li; Wei Hu; Yi Zhao; Jingying Hou; Shiyong Liu

2008-05-01T23:59:59.000Z

180

ZnO PN Junctions for Highly-Efficient, Low-Cost Light Emitting Diodes  

SciTech Connect

By 2015, the US Department of Energy has set as a goal the development of advanced solid state lighting technologies that are more energy efficient, longer lasting, and more cost-effective than current technology. One approach that is most attractive is to utilize light-emitting diode technologies. Although III-V compound semiconductors have been the primary focus in pursuing this objective, ZnO-based materials present some distinct advantages that could yield success in meeting this objective. As with the nitrides, ZnO is a direct bandgap semiconductor whose gap energy (3.2 eV) can be tuned from 3.0 to 4 eV with substitution of Mg for higher bandgap, Cd for lower bandgap. ZnO has an exciton binding energy of 60 meV, which is larger than that for the nitrides, indicating that it should be a superior light emitting semiconductor. Furthermore, ZnO thin films can be deposited at temperatures on the order of 400-600 C, which is significantly lower than that for the nitrides and should lead to lower manufacturing costs. It has also been demonstrated that functional ZnO electronic devices can be fabricated on inexpensive substrates, such as glass. Therefore, for the large-area photonic application of solid state lighting, ZnO holds unique potential. A significant impediment to exploiting ZnO in light-emitting applications has been the absence of effective p-type carrier doping. However, the recent realization of acceptor-doped ZnO material overcomes this impediment, opening the door to ZnO light emitting diode development In this project, the synthesis and properties of ZnO-based pn junctions for light emitting diodes was investigated. The focus was on three issues most pertinent to realizing a ZnO-based solid state lighting technology, namely (1) achieving high p-type carrier concentrations in epitaxial and polycrystalline films, (2) realizing band edge emission from pn homojunctions, and (3) investigating pn heterojunction constructs that should yield efficient light emission. The project engaged established expertise at the University of Florida in ZnO film growth (D. Norton), device fabrication (F. Ren) and wide bandgap photonics (S. Pearton). It addressed p-type doping and junction formation in (Zn,Mg)O alloy thin films. The project employed pulsed laser deposition for film growth. The p-type dopant of interest was primarily phosphorus, given the recent results in our laboratory and elsewhere that this anions can yield p-type ZnO-based materials. The role of Zn interstitials, oxygen vacancies, and/or hydrogen complexes in forming compensating shallow donor levels imposes the need to simultaneously consider the role of in situ and post-growth processing conditions. Temperature-dependent Hall, Seebeck, C-V, and resistivity measurements was used to determine conduction mechanisms, carrier type, and doping. Temperature-dependent photoluminescence was used to determine the location of the acceptor level, injection efficiency, and optical properties of the structures. X-ray diffraction will used to characterize film crystallinity. Using these materials, the fabrication and characterization of (Zn,Mg)O pn homojunction and heterojunction devices was pursued. Electrical characterization of the junction capacitance and I-V behavior was used to extract junction profile and minority carrier lifetime. Electroluminescence from biased junctions was the primary property of interest.

David P. Norton; Stephen Pearton; Fan Ren

2007-09-30T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes  

SciTech Connect

We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)] [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2013-01-28T23:59:59.000Z

182

Physical properties and design of light-emitting devices based on organic materials and nanoparticles  

E-Print Network (OSTI)

This thesis presents the detailed experimental and theoretical characterization of light-emitting devices (LEDs) based on organic semiconductors and colloidal quantum dots (QDs). This hybrid material system has several ...

Anikeeva, Polina Olegovna

2009-01-01T23:59:59.000Z

183

Aspects of charge recombination and charge transport in organic solar cells and light-emitting devices  

E-Print Network (OSTI)

In this thesis, aspects of charge reconbination and charge transport in organic solar cells and light-emitting devices are presented. These devices show promise relative to traditional inorganic semiconductors. We show ...

Difley, Seth

2010-01-01T23:59:59.000Z

184

Growth condition dependence of spin-polarized electroluminescence in Fe/MgO/light-emitting diodes  

SciTech Connect

We compared the electroluminescence (EL) polarization of two Fe/MgO/light-emitting-diode (LED) structures grown at different substrate temperatures for MgO growth: room temperature and 400 deg. C. Two spin-LED wafers were prepared on molecular beam epitaxy grown LEDs by e-beam evaporation: one was LED/MgO (RT)/Fe (RT)/Au cap (RT), and the other was LED/MgO (400 deg. C)/Fe (150 deg. C)/Au cap (90 deg. C). Spin-polarized EL was clearly observed in the latter sample, while the EL polarization was hardly observed in the former sample. The reasons for the near absence of EL polarization in the former sample are considered to be the degradation of the tunneling junction resulting from the crystallinity and the As-rich surface of the LED.

Manago, Takashi; Sinsarp, Asawin; Akinaga, Hiro [Department of Electronics and Computer Science, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-Dori, Sanyo-Onoda, Yamaguchi 756-0884 (Japan); Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

2007-10-15T23:59:59.000Z

185

Thermal And Mechanical Analysis of High-power Light-emitting Diodes with Ceramic Packages  

E-Print Network (OSTI)

In this paper we present the thermal and mechanical analysis of high-power light-emitting diodes (LEDs) with ceramic packages. Transient thermal measurements and thermo-mechanical simulation were performed to study the thermal and mechanical characteristics of ceramic packages. Thermal resistance from the junction to the ambient was decreased from 76.1 oC/W to 45.3 oC/W by replacing plastic mould to ceramic mould for LED packages. Higher level of thermo-mechanical stresses in the chip were found for LEDs with ceramic packages despite of less mismatching coefficients of thermal expansion comparing with plastic packages. The results suggest that the thermal performance of LEDs can be improved by using ceramic packages, but the mounting process of the high power LEDs with ceramic packages is critically important and should be in charge of delaminating interface layers in the packages.

J. Hu; L. Yang; M. -W. Shin

2008-01-07T23:59:59.000Z

186

Using light emitting diode arrays as touchsensitive input and output devices  

E-Print Network (OSTI)

Light Emitting Diodes (LEDs) offer long life, low cost, efficiency, brightness, and a full range of colors. Because of these properties, they are widely used for simple displays in electronic devices. A previously characterized, but little known property of LEDs allows them to be used as photo sensors. In this paper, we show how this capability can be used to turn unmodified, off the shelf, LED arrays into touch sensitive input devices (while still remaining capable of producing output). The technique is simple and requires little or no extra hardware – in some cases operating with the same micro-controller based circuitry normally used to produce output, requiring only software changes. We will describe a simple hybrid input/output device prototype implemented with this technique, and discuss the design opportunities that this type of device opens up. Categories and Subject Descriptors:

Scott E. Hudson

2004-01-01T23:59:59.000Z

187

Light-emitting diode spherical packages: an equation for the light transmission efficiency  

E-Print Network (OSTI)

Virtually all light-emitting diodes (LEDs) are encapsulated with a transparent epoxy or silicone-gel. In this paper we analyze the optical efficiency of spherical encapsulants. We develop a quasi-radiometric equation for the light transmission efficiency, which incorporates some ideas of Monte-Carlo ray tracing into the context of radiometry. The approach includes the extended source nature of the LED chip, and the chip radiance distribution. The equation is an explicit function of the size and the refractive index of the package, and also of several chip parameters such as shape, size, radiance, and location inside the package. To illustrate the use of this equation, we analyze several packaging configurations of practical interest; for example, a hemispherical dome with multiple chips, a flat encapsulation as a special case of the spherical package, and approximate calculations of an encapsulant with a photonic crystal LED or with a photonic quasi crystal LED. These calculations are compared with Monte-Carl...

Moreno, Ivan; Avendano-Alejo, Maximino; 10.1364/AO.49.000012

2011-01-01T23:59:59.000Z

188

Demonstration Assessment of Light-Emitting Diode (LED) Post-Top Lighting at Central Park in New York City  

SciTech Connect

A review of five post-top light-emitting diode (LED) pedestrian luminaires installed in New York City's Central Park for possible replacement to the existing metal halide post-top luminaire. This report reviews the energy savings potential and lighting delivered by the LED post-top luminaires.

Myer, Michael; Goettel, Russell T.; Kinzey, Bruce R.

2012-09-30T23:59:59.000Z

189

Sliding Mode Pulsed Averaging IC Drivers for High Brightness Light Emitting Diodes  

SciTech Connect

This project developed new Light Emitting Diode (LED) driver ICs associated with specific (uniquely operated) switching power supplies that optimize performance for High Brightness LEDs (HB-LEDs). The drivers utilize a digital control core with a newly developed nonlinear, hysteretic/sliding mode controller with mixed-signal processing. The drivers are flexible enough to allow both traditional microprocessor interface as well as other options such as “on the fly” adjustment of color and brightness. Some other unique features of the newly developed drivers include • AC Power Factor Correction; • High power efficiency; • Substantially fewer external components should be required, leading to substantial reduction of Bill of Materials (BOM). Thus, the LED drivers developed in this research : optimize LED performance by increasing power efficiency and power factor. Perhaps more remarkably, the LED drivers provide this improved performance at substantially reduced costs compared to the present LED power electronic driver circuits. Since one of the barriers to market penetration for HB-LEDs (in particular “white” light LEDs) is cost/lumen, this research makes important contributions in helping the advancement of SSL consumer acceptance and usage.

Dr. Anatoly Shteynberg, PhD

2006-08-17T23:59:59.000Z

190

Green Light-Emitting Diode Makes Highly Efficient White Light, The Spectrum of Clean Energy Innovation (Fact Sheet)  

NLE Websites -- All DOE Office Websites (Extended Search)

Spectrum of Spectrum of Clean Energy Innovation innovati n Green Light-Emitting Diode Makes Highly Efficient White Light Scientists at the National Renewable Energy Laboratory (NREL) have invented a deep green light-emitting diode (LED) that can lead to higher efficiency white light, which is of prime value in the indoor lighting world. LEDs are fundamentally solar cells operating in reverse-that is, when an electrical current is applied to a thin-film semiconductor, the result is the emission of light. These devices are a key technology for producing a new generation of efficient lighting, in which the amount of light generated far outweighs the amount of heat produced. But at the moment, LEDs that emit white light are produced using an inefficient process known as phosphor conversion. In this process, light from a blue- or ultraviolet-emitting LED energizes

191

N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping  

Science Conference Proceedings (OSTI)

Nitrogen-polar III-nitride heterostructures present unexplored advantages over Ga(metal)-polar crystals for optoelectronic devices. This work reports N-polar III-nitride quantum-well ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy that integrate polarization-induced p-type doping by compositional grading from GaN to AlGaN along N-face. The graded AlGaN layer simultaneously acts as an electron blocking layer while facilitating smooth injection of holes into the active region, while the built-in electric field in the barriers improves carrier injection into quantum wells. The enhanced doping, carrier injection, and light extraction indicate that N-polar structures have the potential to exceed the performance of metal-polar ultraviolet light-emitting diodes.

Verma, Jai; Simon, John; Protasenko, Vladimir; Kosel, Thomas; Xing, Huili Grace; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2011-10-24T23:59:59.000Z

192

Investigation of an Electromagnetic Interference (EMI) Problem Involving Light-Emitting Diode Streetlights and an Amateur Radio Tran sceiver  

Science Conference Proceedings (OSTI)

Any type of electronic device is susceptible to energy from the electromagnetic environment. This technical update describes an investigation of electromagnetic interference (EMI) problems associated with amateur radio, distribution hardware, and streetlights at a customer's home in Camden, Tennessee. Because light-emitting diode (LED) streetlights were deemed the direct cause of the EMI problem, an investigational plan involving a two-level effort was customized to fit the situation. First, field observ...

2011-10-06T23:59:59.000Z

193

Note: A portable, light-emitting diode-based ruby fluorescence spectrometer for high-pressure calibration  

SciTech Connect

Ruby (Al{sub 2}O{sub 3}, with {approx}0.5 wt. % Cr doping) is one of the most widely used manometers at the giga-Pascal scale. Traditionally, its fluorescence is excited with intense laser sources. Here, I present a simple, robust, and portable design that employs light-emitting diodes (LEDs) instead. This LED-based system is safer in comparison with laser-based ones.

Feng Yejun [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

2011-04-15T23:59:59.000Z

194

Development of monolithic CMOS-compatible visible light emitting diode arrays on silicon  

E-Print Network (OSTI)

The synergies associated with integrating Si-based CMOS ICs and III-V-material-based light-emitting devices are very exciting and such integration has been an active area of research and development for quite some time ...

Chilukuri, Kamesh

2006-01-01T23:59:59.000Z

195

Intermediate connector for stacked organic light emitting devices  

DOE Patents (OSTI)

A device is provided, having an anode, a cathode, and an intermediate connector disposed between the anode and the cathode. A first organic layer including an emissive sublayer is disposed between the anode and the intermediate connector, and a second including an emissive sublayer is disposed between the intermediate connector and the cathode. The intermediate connector includes a first metal having a work function lower than 4.0 eV and a second metal having a work function lower than 5.0 eV. The work function of the first metal is at least 0.5 eV less than the work function of the second metal. The first metal is in contact with a sublayer of the second organic layer that includes a material well adapted to receive holes from a low work function metal.

D& #x27; Andrade, Brian

2013-02-12T23:59:59.000Z

196

Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming  

DOE Patents (OSTI)

The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

Li, Ting (Ventura, CA)

2011-04-26T23:59:59.000Z

197

Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming  

SciTech Connect

The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

Li, Ting

2013-08-13T23:59:59.000Z

198

Development of InAsSb-based light emitting diodes for chemical sensing systems  

SciTech Connect

Mid-infrared (3--6 {micro}m) LED`s are being developed for use in chemical sensor systems. As rich, InAsSb heterostructures are particularly suited for optical emitters in the mid-infrared region. The authors are investigating both InAsSb-InAs multiple quantum well (MQW) and InAsSb-InAsP strained layer superlattice (SLS) structures for use as the active region for light emitting diodes (LED`s). The addition of phosphorus to the InAs barriers increases the light and heavy hole splitting and hence reduces non-radiative Auger recombination and provides for better electron and hole confinement in the InAsSb quantum well. Low temperature (< 20 K) photoluminescence (PL) emission from MQW structures is observed between 3.2 to 6.0 {micro}m for InAsSb wells between 70 to 100 {angstrom} and antimony mole fractions between 0.04 to 0.18. Room temperature PL has been observed to 6.4 {micro}m in MQW structures. The additional confinement by InAsP barriers results in low temperature PL being observed over a narrower range (3.2 to 5.0 {micro}m) for the similar well thicknesses with antimony mole fractions between 0.10 to 0.24. Room temperature photoluminescence was observed to 5.8 {micro}m in SLS structures. The addition of a p-AlAsSb layer between the n-type active region (MQW or SLS) and a p-GaAsSb contact layer improves electron confinement of the active region and increases output power by a factor of 4. Simple LED emitters have been fabricated which exhibit an average power at room temperature of > 100 {micro}W at 4.0 {micro}m for SLS active regions. These LED`s have been used to detect CO{sub 2} concentrations down to 24 ppm in a first generation, non-cryogenic sensor system. They will report on the development of novel LED device designs that are expected to lead to further improvements in output power.

Allerman, A.A.; Kurtz, S.R.; Biefeld, R.M.; Baucom, K.C.; Burkhatt, J.H.

1998-02-01T23:59:59.000Z

199

Influences of excitation-dependent bandstructure changes on InGaN light-emitting diode efficiency  

E-Print Network (OSTI)

Bandstructure properties in wurtzite quantum wells can change appreciably with changing carrier density because of screening of quantum-confined Stark effect. An approach for incorporating these changes in an InGaN light-emitting-diode model is described. Bandstructure is computed for different carrier densities by solving Poisson and k\\cdotp equations in the envelop approximation. The information is used as input in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach is illustrated by modeling device internal quantum efficiency as a function of excitation.

Chow, Weng W

2011-01-01T23:59:59.000Z

200

Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode  

E-Print Network (OSTI)

The changes in excitation dependence of efficiency with temperature is modeled for a wurtzite InGaN light-emitting diode. The model incorporates bandstructure changes with carrier density arising from screening of quantum-confined Stark effect. Bandstructure is computed by solving Poisson and k.p equations in the envelop approximation. The information is used in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach shows the interplay of quantum-well and barrier emissions giving rise to shape changes in efficiency versus current density with changing temperature, as observed in some experiments.

Chow, Weng W

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Demonstration Assessment of Light-Emitting Diode (LED) Parking Lot Lighting in Leavenworth, KS  

SciTech Connect

This report describes the process and results of a demonstration of solid-state lighting (SSL) technology in a commercial parking lot lighting application, under the U.S. Department of Energy (DOE) Solid-State Lighting Technology GATEWAY Demonstration Program. The parking lot is for customers and employees of a Walmart Supercenter in Leavenworth, Kansas and this installation represents the first use of the LED Parking Lot Performance Specification developed by the DOE’s Commercial Building Energy Alliance. The application is a parking lot covering more than a half million square feet, lighted primarily by light-emitting diodes (LEDs). Metal halide wall packs were installed along the building facade. This site is new construction, so the installed baseline(s) were hypothetical designs. It was acknowledged early on that deviating from Walmart’s typical design would reduce the illuminance on the site. Walmart primarily uses 1000W pulse-start metal halide (PMH) lamps. In order to provide a comparison between both typical design and a design using conventional luminaires providing a lower illuminance, a 400W PMH design was also considered. As mentioned already, the illuminance would be reduced by shifting from the PMH system to the LED system. The Illuminating Engineering Society of North America (IES) provides recommended minimum illuminance values for parking lots. All designs exceeded the recommended illuminance values in IES RP-20, some by a wider margin than others. Energy savings from installing the LED system compared to the different PMH systems varied. Compared to the 1000W PMH system, the LED system would save 63 percent of the energy. However, this corresponds to a 68 percent reduction in illuminance as well. In comparison to the 400W PMH system, the LED system would save 44 percent of the energy and provide similar minimum illuminance values at the time of relamping. The LED system cost more than either of the PMH systems when comparing initial costs. However, when the life-cycle costs from energy and maintenance were factored into the scenario, the LED system had lower costs at the end of a 10-year analysis period. The LED system had a 6.1 year payback compared to the 1000W PMH system and a 7.5 year payback versus the 400W PMH system. The costs reflect high initial cost for the LED luminaire, plus more luminaires and (subsequently) more poles for the LED system. The other major issue affecting cost effectiveness was that Leavenworth, Kansas has very low electricity costs. The melded rate for this site was $0.056 per kWh for electricity. However, if the national electricity rate of $0.1022/kWh was used the payback would change to between four and five years for the LED system. This demonstration met the GATEWAY requirements of saving energy, matching or improving illumination, and being cost effective. The project also demonstrated that the Commercial Building Energy Alliance (CBEA) specification works in practice. Walmart appreciated having an entire site lighted by LEDs to gain more experience with the technology. Walmart is reviewing the results of the demonstration as they consider their entire real estate portfolio.

Myer, Michael; Kinzey, Bruce R.; Curry, Ku'uipo

2011-05-06T23:59:59.000Z

202

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes  

SciTech Connect

Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1-3 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes.

Sizov, V. S., E-mail: vsizov@mail.ioffe.ru; Tsatsulnikov, A. F.; Sakharov, A. V.; Lundin, W. V.; Zavarin, E. E.; Cherkashin, N. A. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Hytch, M. J. [National Center for Scientific Research (CNRS), Center for Material Elaboration and Structural Studies (CEMES) (France); Nikolaev, A. E. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Mintairov, A. M.; He Yan; Merz, J. L. [University of Notre Dame, EE Department (United States)

2010-07-15T23:59:59.000Z

203

Differential spectral responsivity measurement of photovoltaic detectors with a light-emitting-diode-based integrating sphere source  

SciTech Connect

We present an experimental realization of differential spectral responsivity measurement by using a light-emitting diode (LED)-based integrating sphere source. The spectral irradiance responsivity is measured by a Lambertian-like radiation field with a diameter of 40mm at the peak wavelengths of the 35 selectable LEDs covering a range from 280 to 1550nm. The systematic errors and uncertainties due to lock-in detection, spatial irradiance distribution, and reflection from the test detector are experimentally corrected or considered. In addition, we implemented a numerical procedure to correct the error due to the broad spectral bandwidth of the LEDs. The overall uncertainty of the DSR measurement is evaluated to be 2.2% (k=2) for Si detectors. To demonstrate its application, we present the measurement results of two Si photovoltaic detectors at different bias irradiance levels up to 120mW/cm{sup 2}.

Zaid, Ghufron; Park, Seung-Nam; Park, Seongchong; Lee, Dong-Hoon

2010-12-10T23:59:59.000Z

204

Demonstration Assessment of Light-Emitting Diode (LED) Retrofit Lamps at the Lobby of the Bonneville Power Administration, Portland, OR  

SciTech Connect

This report describes the process and results of a demonstration of solid-state lighting (SSL) technology in the lobby of the Bonneville Power Administration (BPA) headquarters building in Portland, Oregon. The project involved a simple retrofit of 32 track lights used to illuminate historical black-and-white photos and printed color posters from the 1930s and 1940s. BPA is a federal power marketing agency in the Northwestern United States, and selected this prominent location to demonstrate energy efficient light-emitting diode (LED) retrofit options that not only can reduce the electric bill for their customers but also provide attractive alternatives to conventional products, in this case accent lighting for BPA's historical artwork.

Miller, Naomi

2011-07-01T23:59:59.000Z

205

Demonstration Assessment of Light-Emitting Diode Parking Structure Lighting at U.S. Department of Labor Headquarters  

SciTech Connect

This report documents a solid-state lighting (SSL) technology demonstration at the parking structure of the U.S. Department of Labor (DOL) Headquarters in Washington, DC, in which light-emitting diode (LED) luminaires were substituted for the incumbent high-pressure sodium (HPS) luminaires and evaluated for relative light quantity and performance. The demonstration results show energy savings of 52% from the initial conversion of HPS to the LED product. These savings were increased to 88% by using occupancy sensor controls that were ultimately set to reduce power to 10% of high state operation after a time delay of 2.5 minutes. Because of the relatively high cost of the LED luminaires at their time of purchase for this project (2010), the simple payback periods were 6.5 years and 4.9 years for retrofit and new construction scenarios, respectively. Staff at DOL Headquarters reported high satisfaction with the operation of the LED product.

Kinzey, Bruce R.; Myer, Michael

2013-03-01T23:59:59.000Z

206

Interplay between multiple scattering, emission, and absorption of light in the phosphor of a white light-emitting diode  

E-Print Network (OSTI)

We study light transport in phosphor plates of white light-emitting diodes (LEDs). We measure the broadband diffuse transmission through phosphor plates of varying YAG:Ce$^{3+}$ density. We distinguish the spectral ranges where absorption, scattering, and re-emission dominate. Using diffusion theory, we derive the transport and absorption mean free paths from first principles. We find that both transport and absorption mean free paths are on the order of the plate thickness. This means that phosphors in commercial LEDs operate well within an intriguing albedo range around 0.7. We discuss how salient parameters that can be derived from first principles control the optical properties of a white LED.

Leung, V Y F; Tukker, T W; Mosk, A P; IJzerman, W L; Vos, W L

2013-01-01T23:59:59.000Z

207

Organic light-emitting diodes with carbon nanotube cathode ...  

parent indium-tin-oxide !IT O " anode in combination with ... OfÞce of Ener gy EfÞciency and Renewable Ener gy , under Contract No. DE-AC02-05CH1 1231. 1C. W .

208

Functional Polymer Architectures for Solution Processed Organic Light Emitting Diodes  

E-Print Network (OSTI)

OLED emitter and indium tin oxide (ITO) as the transparentanode (typically indium tin oxide, ITO) and the cathode (solution on pre-treated indium-tin-oxide (ITO)-coated glass

Poulsen, Daniel Andrew

2010-01-01T23:59:59.000Z

209

Microdisplays based upon organic light-emitting diodes  

Science Conference Proceedings (OSTI)

Microdisplays, some of which exploit the dense electronic circuitry in a silicon chip, are enabling a new wave of ultraportable information products, including headsets for viewing movies and cell phones with full-screen Internet access. This paper reports ...

W. E. Howard; O. F. Prache

2001-01-01T23:59:59.000Z

210

Cubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy  

E-Print Network (OSTI)

this paper, we report on the doping characteristics of Si and Mg in the growth of cubic GaN by metalorganic vapor-phase epitaxy (MOVPE). We also report the growth of a p-n diode structure made of cubic GaN, and its characterization by electron-beam-induced-current (EBIC) and current injection measurements.

Hidenao Tanaka Member; Vapor-phase Epitaxy; Atsushi Nakadaira

2000-01-01T23:59:59.000Z

211

nature materials | VOL 3 | SEPTEMBER 2004 | www.nature.com/naturematerials 601 ince 1993, InGaN light-emitting diodes (LEDs) have been  

E-Print Network (OSTI)

not fulfilled their original promise as solid-state replacements for light bulbs as their light, InGaN light-emitting diodes (LEDs) have been improved and commercialized1,2 , but these devices have and the spontaneous emissionrateinthesemiconductor3­9 ,andleadtotheenhancementof light emission by SP­QW coupling10

Okamoto, Koichi

212

Light output enhancement of InGaN/GaN light-emitting diodes with contrasting indium tin-oxide nanopatterned structures  

Science Conference Proceedings (OSTI)

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square ...

Sang Hyun Jung, Keun Man Song, Young Su Choi, Hyeong-Ho Park, Hyun-Beom Shin, Ho Kwan Kang, Jaejin Lee

2013-01-01T23:59:59.000Z

213

Detecting indentations on documents pressed by pen tip force using a near infrared light emitting diode (NIR LED) and shape from shading  

Science Conference Proceedings (OSTI)

We proposed the new method that detected indentations pressed by pen tip force on paper using an oblique near infrared (NIR) emitting by light emitting diodes (LEDs). According to conventional methods indentations were observed by document examiners' ... Keywords: NIR LED, handwriting, indentations, shape from shading

Takeshi Furukawa

2010-11-01T23:59:59.000Z

214

An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode  

SciTech Connect

We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski-Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.

Mehta, M.; Michaelis de Vasconcellos, S.; Zrenner, A.; Meier, C. [Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), University of Paderborn, Warburger Street 100, 33098 Paderborn (Germany); Reuter, D.; Wieck, A. D. [Applied Solid State Physics, Ruhr-University of Bochum, Universitaetsstr. 150, 44780 Bochum (Germany)

2010-10-04T23:59:59.000Z

215

Organic Light-Emitting Devices (OLEDS) and Their Optically Detected Magnetic Resonance (ODMR)  

DOE Green Energy (OSTI)

Organic Light-Emitting Devices (OLEDs), both small molecular and polymeric have been studied extensively since the first efficient small molecule OLED was reported by Tang and VanSlyke in 1987. Burroughes' report on conjugated polymer-based OLEDs led to another track in OLED development. These developments have resulted in full color, highly efficient (up to {approx} 20% external efficiency 60 lm/W power efficiency for green emitters), and highly bright (> 140,000 Cd/m{sup 2} DC, {approx}2,000,000 Cd/m{sup 2} AC), stable (>40,000 hr at 5 mA/cm{sup 2}) devices. OLEDs are Lambertian emitters, which intrinsically eliminates the view angle problem of liquid crystal displays (LCDs). Thus OLEDs are beginning to compete with the current dominant LCDs in information display. Numerous companies are now active in this field, including large companies such as Pioneer, Toyota, Estman Kodak, Philipps, DuPont, Samsung, Sony, Toshiba, and Osram, and small companies like Cambridge Display Technology (CDT), Universal Display Corporation (UDC), and eMagin. The first small molecular display for vehicular stereos was introduced in 1998, and polymer OLED displays have begun to appear in commercial products. Although displays are the major application for OLEDs at present, they are also candidates for nest generation solid-state lighting. In this case the light source needs to be white in most cases. Organic transistors, organic solar cells, etc. are also being developed vigorously.

Gang Li

2003-12-12T23:59:59.000Z

216

The Electric and Optical Properties of Doped Small Molecular Organic Light-Emitting Devices  

SciTech Connect

Organic light-emitting devices (OLEDs) constitute a new and exciting emissive display technology. In general, the basic OLED structure consists of a stack of fluorescent organic layers sandwiched between a transparent conducting-anode and metallic cathode. When an appropriate bias is applied to the device, holes are injected from the anode and electrons from the cathode; some of the recombination events between the holes and electrons result in electroluminescence (EL). Until now, most of the efforts in developing OLEDs have focused on display applications, hence on devices within the visible range. However some organic devices have been developed for ultraviolet or infrared emission. Various aspects of the device physics of doped small molecular OLEDs were described and discussed. The doping layer thickness and concentration were varied systematically to study their effects on device performances, energy transfer, and turn-off dynamics. Low-energy-gap DCM2 guest molecules, in either {alpha}-NPD or DPVBi host layers, are optically efficient fluorophores but also generate deep carrier trap-sites. Since their traps reduce the carrier mobility, the current density decreases with increased doping concentration. At the same time, due to efficient energy transfer, the quantum efficiency of the devices is improved by light doping or thin doping thickness, in comparison with the undoped neat devices. However, heavy doping induces concentration quenching effects. Thus, the doping concentration and doping thickness may be optimized for best performance.

Kwang-Ohk Cheon

2003-08-05T23:59:59.000Z

217

Highly efficient blue organic light emitting devices with indium-free transparent anode on flexible substrates  

Science Conference Proceedings (OSTI)

Indium-free transparent conducting oxides may provide a lower cost solution for the transparent anode in flexible displays and energy efficient solid state lighting. We report herein a near room temperature sputtering process for generating an indium-free transparent conductive oxide (TCO) coating on a flexible substrate. Specifically, we deposited gallium-doped zinc oxide (GZO) uniformly over a 12” diameter area at room temperature on polyethylene terephthalate (PET). During deposition, the system heats to about 60oC due to the energetic sputtering conditions, without any noticeable damage to the PET substrate. The GZO films exhibit excellent physical, optical and electrical properties: roughness ~7 nm, transmittance >85% and resistivity ~ 10-3 ohm• cm. Phosphorescent blue organic light-emitting devices (OLEDs) were fabricated on these substrates with comparable performance (16% external quantum efficiency and 33 lm/W power efficiency at 1mA/cm2) to that of devices fabricated on GZO (or ITO) deposited on glass substrates, suggesting flexible GZO/PET substrates may be used instead of high-cost and rigid ITO and glass for flexible displays and solid state lighting.

Wang, Liang; Swensen, James S.; Polikarpov, Evgueni; Matson, Dean W.; Bonham, Charles C.; Bennett, Wendy D.; Gaspar, Daniel J.; Padmaperuma, Asanga B.

2010-09-30T23:59:59.000Z

218

Assessment of Electrical, Efficiency, and Photometric Performance of Advanced Lighting Technologies: Dimmable Advanced Lighting Tech nologies -- Electronic Fluorescent, High-Intensity Discharge, and Light-Emitting Diode  

Science Conference Proceedings (OSTI)

This EPRI Technical Report is a compilation of four technical updates that address the basic dimming performance of advanced lighting sources: EPRI report 1018476 for linear fluorescent ballasts, 1018477 for hot and cold cathode compact fluorescent lamps, 1018479 for electronic high-intensity discharge (HID) ballasts, and 1018480 for light-emitting diode (LED) lighting. Chapter 1 provides a discussion of basic lighting control, the importance of considering power quality in lighting control, lighting con...

2008-12-22T23:59:59.000Z

219

Comparing Light-Emitting Diode (LED) Street and Area Lighting to Traditional Lighting Technologies: Assessing LED Performance at Gul f Power in Pensacola, Florida  

Science Conference Proceedings (OSTI)

Manufacturing advances have now made the use of light-emitting diode (LED) technology practical for street and area lighting. To better understand the application, the Electric Power research Institute (EPRI teamed with Southern Company and Gulf Power to install LED street lights at a demonstration site and measure the performance. The data showed several disadvantages such as a lower efficacy compared to traditional technology and lower immunity to electrical disturbances, but advantages in energy savin...

2012-04-21T23:59:59.000Z

220

Assessment of Electrical, Efficiency, and Photometric Performance of Advanced Lighting Sources: Dimmable Advanced Lighting Technolog ies -- Electronic Light-Emitting Diode (LED) Fixtures, Lamps, and Drivers  

Science Conference Proceedings (OSTI)

This EPRI Technical Update addresses the dimming performance of light-emitting diode (LED) lighting. Chapter 1 provides a discussion of basic lighting control, the importance of considering power quality in lighting control, lighting control methods and parameters, and the advantages and future of lighting control. Chapter 2 addresses in more depth the dimming methods used in advanced lighting sources and controls for incandescent, fluorescent, high-intensity discharge (HID) and LED sources. Chapter 3 ad...

2008-12-19T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Functional Imprinting Structures on GaN-Based Light-Emitting ...  

Science Conference Proceedings (OSTI)

Keywords: GaN, light-emitting diode (LED), imprinting technology, far-field pattern modulation, light extraction. 1. Introduction. GaN-based light-emitting diodes ...

222

Edge electroluminescence of the effective silicon point-junction light-emitting diode in the temperature range 80-300 K  

SciTech Connect

The edge electroluminescence spectra of silicon point-junction light-emitting diodes with a p-n junction area of 0.008 mm{sup 2} are studied at temperatures ranging from 80 to 300 K. Unprecedentedly high stability of the position of the spectral peak is observed at temperatures in the range between 130 and 300 K. The spectral characteristics of the light emitting diodes are studied at 80 K at different current densities up to 25 kA/cm{sup 2}. In contrast to the earlier reported data obtained at 300 K, the data obtained at 80 K do not show any noticeable Augerrecombination-related decrease in the quantum efficiency. From an analysis of the electroluminescence spectra at 80 K in a wide range of currents, it follows that radiative annihilation of free excitons is not a governing mechanism of electroluminescence in the entire emitting region in the base of the point-junction light-emitting diode at all currents used in the experiment.

Emel'yanov, A. M. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)], E-mail: Emelyanov@mail.ioffe.ru

2008-11-15T23:59:59.000Z

223

The Hybridization of CdSe/ZnS Quantum Dot on InGaN Light-Emitting Diodes for Color Conversion  

Science Conference Proceedings (OSTI)

We have demonstrated the fabrication and characterization of hybrid CdSe/ZnS quantum dot (QD)-InGaN blue LEDs. The chemically synthesized red light (lambda = 623 nm) QD solutions with different concentrations were dropped onto the blue InGaN LEDs with ... Keywords: CdSe/ZnS quantum dots, CdSe/ZnS quantum dots (QDs), InGaN quantum well and hybrid LEDs, InGaN quantum well and hybrid light-emitting diodes

Ying-Chih Chen; Chun-Yuan Huang; Yan-Kuin Su; Wen-Liang Li; Chia-Hsien Yeh; Yu-Cheng Lin

2008-07-01T23:59:59.000Z

224

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

225

Demonstration Assessment of Light Emitting Diode (LED) Commercial Garage Lights In the Providence Portland Medical Center, Portland, Oregon  

SciTech Connect

This U.S. Department of Energy GATEWAY Demonstration project studied the applicability of light-emitting diode (LED) luminaires for commercial parking garage applications. High-pressure sodium (HPS) area luminaires were replaced with new LED area luminaires. The project was supported under the U.S. Department of Energy (DOE) Solid State Lighting Program. Other participants in the demonstration project included Providence Portland Medical Center in Portland, Oregon, the Energy Trust of Oregon, and Lighting Sciences Group (LSG) Inc. Pacific Northwest National Laboratory (PNNL) conducted the measurements and analysis of the results. PNNL manages GATEWAY demonstrations for DOE and represents their perspective in the conduct of the work. Quantitative and qualitative measurements of light and electrical power were taken at the site for both HPS and LED light sources. Economic costs were estimated and garage users’ responses to the new light sources were gauged with a survey. Six LED luminaires were installed in the below-ground parking level A, replacing six existing 150W HPS lamps spread out over two rows of parking spaces. Illuminance measurements were taken at floor level approximately every 4 ft on a 60-ft x 40-ft grid to measure light output of these LED luminaires which were termed the “Version 1” luminaires. PNNL conducted power measurements of the circuit in the garage to which the 6 luminaires were connected and determined that they drew an average of 82 W per lamp. An improved LED luminaire, Version 2, was installed in Level B of the parking garage. Illuminance measurements were not made of this second luminaire on site due to higher traffic conditions, but photometric measurements of this lamp and Version 1 were made in an independent testing laboratory and power usage for Version 2 was also measured. Version 1 was found to produce 3600 lumens and Version 2 was found to produce 4700 lumens of light and to consume 78 Watts. Maximum and minimum light levels were measured for the HPS and LED Version 1 luminaires and projected for the Version 2 luminaires. Maximum light levels were 23.51 foot candles, 20.54 fc, and 26.7 fc respectively and minimum light levels were 1.49 fc, 1.45 fc, and 1.88 fc. These results indicate very similar or even slightly higher light levels produced by the LED lamps, despite the higher lumen output of the HPS lamp. The LED lamps provide higher luminaire efficacy because all of the light is directed down and out. None of it is “lost” in the fixture. Also the HPS luminaire had poorly designed optics and a plastic covering that tended to get dirty and cracked, further decreasing the realized light output.[is this an accurate way to say this?] Consumer perceptions of the Version 2 LED were collected via a written survey form given to maintenance and security personnel. More than half felt the LED luminaires provided more light than the HPS lamps and a majority expressed a preference for the new lamps when viewing the relamped area through a security camera. Respondents commented that the LED luminaires were less glary, created less shadows, had a positive impact on visibility, and improved the overall appearance of the area. PNNL conducted an economic analysis and found that the Version 1 lamp produced annual energy savings of 955 kWh and energy cost savings of $76.39 per lamp at electricity rates of 6.5 cents per kWh and $105.03 at 11 cents per kWh. PNNL found that the Version 2 lamp produced annual energy savings of 991 kWh and energy cost savings of $79.26 per lamp at electricity rates of 6.5 cents per kWh and $108.98 at 11 cents per kWh. PNNL also calculated simple payback and found that Version 1 showed paybacks of 5.4 yrs at 6.5c/kWh and 4.1 yrs at 11c/kWh while Version 2 showed paybacks of 5.2 yrs at 6.5c/kWh and 3.9 yrs at 11c/kWh.

Ton, My K.; Richman, Eric E.; Gilbride, Theresa L.

2008-11-11T23:59:59.000Z

226

Layering Mismatched Lattices Creates Long-Sought-After Green Light-Emitting Diode (Fact Sheet), NREL Highlights, Science, NREL (National Renewable Energy Laboratory)  

NLE Websites -- All DOE Office Websites (Extended Search)

Scientists at the National Renewable Energy Laboratory (NREL) Scientists at the National Renewable Energy Laboratory (NREL) invent a deep green LED that can lead to higher-efficiency white light, lower electric bills. The white light light-emitting diode (LED) that promises to revolutionize indoor lighting while dramatically lowering electricity costs had been confounded by the so-called "green gap:" the inability to develop light in the green spectrum that can be combined with red and blue to produce white light. NREL researchers conceptualized a green emission by taking a different look at how the laboratory's solar cell researchers had set a world efficiency record and by changing a key process that had created a red LED. A good green color of light is between 530 and 570 nanometers (nm) on the Color

227

Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density  

SciTech Connect

The study is devoted to theoretical explanation of a decrease in the electroluminescence efficiency as the pump current increases, which is characteristic of light-emitting-diode (LED) heterostructures based on AlInGaN. Numerical simulation shows that the increase in the external quantum efficiency at low current densities J {approx} 1 A/cm{sup 2} is caused by the competition between radiative and nonradiative recombination. The decrease in the quantum efficiency at current densities J > 1 A/cm{sup 2} is caused by a decrease in the efficiency of hole injection into the active region. It is shown that the depth of the acceptor energy level in the AlGaN emitter, as well as low electron and hole mobilities in the p-type region, plays an important role in this effect. A modified LED heterostructure is suggested in which the efficiency decrease with the pump current should not occur.

Rozhansky, I. V., E-mail: igor@quantum.ioffe.ru; Zakheim, D. A. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

2006-07-15T23:59:59.000Z

228

Light-extraction enhancement in GaN-based light-emitting diodes using grade-refractive-index amorphous titanium oxide films with porous structures  

SciTech Connect

Amorphous titanium oxide (a-TiO{sub x}:OH) films prepared by plasma-enhanced chemical-vapor deposition at 200 and 25 deg. C are in turn deposited onto the GaN-based light-emitting diode (LED) to enhance the associated light extraction efficiency. The refractive index, porosity, and photocatalytic effect of the deposited films are correlated strongly with the deposition temperatures. The efficiency is enhanced by a factor of {approx}1.31 over that of the uncoated LEDs and exhibited an excellent photocatalytic property after an external UV light irradiation. The increase in the light extraction is related to the reduction in the Fresnel transmission loss and the enhancement of the light scattering into the escape cone by using the graded-refractive-index a-TiO{sub x}:OH film with porous structures.

Liu, D.-S.; Lin, T.-W.; Huang, B.-W.; Juang, F.-S.; Lei, P.-H. [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei 63201, Taiwan (China); Hu, C.-Z. [Chilin Technology Co. Ltd., Tainan County 71758, Taiwan (China)

2009-04-06T23:59:59.000Z

229

Save Energy, Money and Prevent Pollution with Light-Emitting...  

NLE Websites -- All DOE Office Websites (Extended Search)

Save Energy, Money and Prevent Pollution with Light-Emitting Diode (LED) Exit Signs Secondary menu About us Press room Contact Us Portfolio Manager Login Facility owners and...

230

Highly efficient blue organic light emitting device using indium-free transparent anode Ga:ZnO with scalability for large area coating  

Science Conference Proceedings (OSTI)

The availability of economically-produced and environmentally-stable transparent conductive oxide (TCO) coatings is critical for the development of a variety of electronic devices requiring transparent electrodes. Such devices include liquid crystal display pixels and organic light emitting diodes (OLEDs),[1, 2] solar cell applications,[3, 4] and electrically heated windows.[5, 6] The materials fulfilling these requirements are usually wide band gap inorganic transparent conductive oxides (TCOs). Tin-doped indium oxide, or ITO, has traditionally been used for electronic TCO applications because of its low resistivity, high work function and transparency. Due to the increasing cost and limited supply of indium and its tendency to migrate in to the device, there has been increasing research interest to substitute ITO with an indium-free material. A number of alternative metal oxides and doped oxides have been evaluated as TCO materials with varying degrees of success.[7, 8] Among these alternatives to ITO, gallium-doped zinc oxide (GZO) [2, 9] and aluminium-doped zinc oxide (AZO) [10, 11] have drawn particular attention. These materials have been demonstrated to have resistivities and transparencies approaching those of the best ITO, low toxicity, and much lower materials cost. Although AZO is attractive as a TCO electrode material, GZO features a greater resistance to oxidation as a result of gallium’s greater electronegativity compared to Submitted to 2 aluminum.[12, 13

Wang, Liang (Frank); Matson, Dean W.; Polikarpov, Evgueni; Swensen, James S.; Bonham, Charles C.; Cosimbescu, Lelia; Berry, J. J.; Ginley, D. S.; Gaspar, Daniel J.; Padmaperuma, Asanga B.

2010-02-15T23:59:59.000Z

231

Measurement and control of exciton spin in organic light emitting devices  

E-Print Network (OSTI)

Organic semiconductors are a promising new material set for electronic and optoelectronic devices. Their properties can be precisely controlled through chemistry, and they are well-suited for large-area, flexible, and ...

Segal, Michael, Ph. D. Massachusetts Institute of Technology

2007-01-01T23:59:59.000Z

232

Evaluation of potential applications for templated arrays of heterostructural semiconductor nanowires as light emitting devices  

E-Print Network (OSTI)

While light emitting devices, such as laser diodes (LDs) and light emitting diodes (LEDs), were first introduced decades ago, they have been the subject of continuing research and improvements due to their relatively poor ...

Zou, Ting, M. Eng. Massachusetts Institute of Technology

2006-01-01T23:59:59.000Z

233

Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces  

SciTech Connect

InGaN-based light emitting diodes (LEDs) with a top pattern-nanoporous p-type GaN:Mg surface were fabricated by using a photoelectrochemical (PEC) process. The peak wavelengths of electroluminescence (EL) and operating voltages were measured as 461.2 nm (3.1 V), 459.6 nm (9.2 V), and 460.1 nm (3.3 V) for conventional, nanoporous, and pattern-nanoporous LEDs using 20 mA operation current. The EL spectrum of the nanoporous LED had a larger blueshift phenomenon as a result of a partial compression strain release in the InGaN active layer through the formation of a top nanoporous surface. The light output power had 12.1% and 26.4% enhancements for the nanoporous and the pattern-nanoporous LEDs compared with conventional LEDs. The larger operating voltage of the nanoporous LED was due to the non-ohmic contact on the PEC treated p-type GaN:Mg surface. By using a pattern-nanoporous p-type GaN:Mg structure, the operating voltage of the pattern-nanoporous LED was reduced to 3.3 V. A lower compression strain in the InGaN active layer and a higher light extraction efficiency at the top nanoporous surface were observed in pattern-nanoporous LEDs for higher efficiency nitride-based LED applications.

Yang, C.C.; Lin, C.F.; Lin, C.M.; Chang, C.C.; Chen, K.T.; Chien, J.F.; Chang, C.Y. [Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)

2008-11-17T23:59:59.000Z

234

Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes  

SciTech Connect

We report metal-assisted electroless fabrication of nanoporous p-GaN to improve the light extraction efficiency of GaN-based light emitting diodes (LEDs). Although it has long been believed that p-GaN cannot be etched at room temperature, in this study we find that Ag nanocrystals (NCs) on the p-GaN surface enable effective etching of p-GaN in a mixture of HF and K{sub 2}S{sub 2}O{sub 8} under ultraviolet (UV) irradiation. It is further shown that the roughened GaN/air interface enables strong scattering of photons emitted from the multiple quantum wells (MQWs). The light output power measurements indicate that the nanoporous LEDs obtained after 10 min etching show a 32.7% enhancement in light-output relative to the conventional LEDs at an injection current of 20 mA without significant increase of the operating voltage. In contrast, the samples etched for 20 min show performance degradation when compared with those etched for 10 min, this is attributed to the current crowding effect and increased surface recombination rate.

Wang Ruijun; Liu Duo; Zuo Zhiyuan; Yu Qian; Feng Zhaobin; Xu Xiangang [State Key Laboratory of Crystal Materials, Shandong University, 27 South Shanda Road, Jinan, Shandong 250100 (China)

2012-03-15T23:59:59.000Z

235

Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount  

SciTech Connect

Vertical and flip-chip light-emitting diode (LED) chips are compared from the viewpoint of the behavior of current spreading in the active region and the distribution of local temperatures and thermal resistances of chips. AlGaInN LED chips of vertical design are fabricated using Si as a submount and LED flipchips were fabricated with the removal of a sapphire substrate. The latter are also mounted on a Si submount. The active regions of both chips are identical and are about 1 mm{sup 2} in size. It is shown that both the emittance of the crystal surface in the visible range and the distribution of local temperatures estimated from radiation in the infrared region are more uniform in crystals of vertical design. Heat removal from flip-chips is insufficient in regions of the n contact, which do not possess good thermal contact with the submount. As a result, the total thermal resistances between the p-n junction and the submount both for the vertical chips and for flip-chips are approximately 1 K/W. The total area of the flip-chips exceeds that of the vertical design chips by a factor of 1.4.

Markov, L. K., E-mail: l.markov@mail.ioffe.ru; Smirnova, I. P.; Pavlyuchenko, A. S. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kukushkin, M. V.; Vasil'eva, E. D. [ZAO Innovation 'Tetis' (Russian Federation); Chernyakov, A. E. [Russian Academy of Sciences, Science-and-Technology Microelectronics Center (Russian Federation); Usikov, A. S. [De Core Nanosemiconductors Ltd. (India)

2013-03-15T23:59:59.000Z

236

Demonstration Assessment of Light Emitting Diode (LED) Walkway Lighting at the Federal Aviation Administration William J. Hughes Technical Center, in Atlantic City, New Jersey  

SciTech Connect

This report documents the results of a collaborative project to demonstrate a solid state lighting (SSL) general illumination product in an outdoor area walkway application. In the project, six light-emitting diode (LED) luminaires were installed to replace six existing high pressure sodium (HPS) luminaires mounted on 14-foot poles on a set of exterior walkways and stairs at the Federal Aviation Administration (FAA) William J. Hughes Technical Center in Atlantic City, New Jersey, during December, 2007. The effort was a U.S. Department of Energy (DOE) SSL Technology Gateway Demonstration that involved a collaborative teaming agreement between DOE, FAA and Ruud Lighting (and their wholly owned division, Beta LED). Pre- and post-installation power and illumination measurements were taken and used in calculations of energy savings and related economic payback, while personnel impacted by the new lights were provided questionnaires to gauge their perceptions and feedback. The SSL product demonstrated energy savings of over 25% while maintaining illuminance levels and improving illuminance uniformity. PNNL's economic analysis yielded a variety of potential payback results depending on the assumptions used. In the best case, replacing HPS with the LED luminaire can yield a payback as low as 3 years. The new lamps were quite popular with the affected personnel, who gave the lighting an average score of 4.46 out of 5 for improvement.

Kinzey, Bruce R.; Myer, Michael

2008-03-18T23:59:59.000Z

237

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, VOL. , NO. , 2012 1 Dynamic Driver Supply Voltage Scaling for Organic  

E-Print Network (OSTI)

Dynamic Driver Supply Voltage Scaling for Organic Light Emitting Diode Displays Donghwa Shin, Student, Fellow, IEEE Abstract--Organic light emitting diode (OLED) display is a self-illuminating device]. On the other hand, an organic light emitting diode (OLED) is self-illuminating using organic light emission

Pedram, Massoud

238

Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In{sub 0.2}Ga{sub 0.8}N/GaN quantum wells  

SciTech Connect

A procedure for measuring the absorption coefficient for light propagating parallel to the surface of a GaN-based light emitting diode chip on a sapphire substrate is suggested. The procedure implies the study of emission from one end face of the chip as the opposite end face is illuminated with a light emitting diode. The absorption coefficient is calculated from the ratio between the intensities of emission emerging from the end faces of the sapphire substrate and the epitaxial layer. From the measurements for chips based on p-GaN/In{sub 0.2}Ga{sub 0.8}N/n-GaN structures, the lateral absorption coefficient is determined at a level of (23 {+-} 3)cm{sup -1} at a wavelength of 465 nm. Possible causes for the discrepancy between the absorption coefficients determined in the study and those reported previously are analyzed.

Lelikov, Yu. S.; Bochkareva, N. I.; Gorbunov, R. I.; Martynov, I. A.; Rebane, Yu. T.; Tarkin, D. V.; Shreter, Yu. G. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)], E-mail: YShreter@mail.ioffe.ru

2008-11-15T23:59:59.000Z

239

Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y{sub 2}O{sub 2}S:Er,Yb luminophor  

SciTech Connect

Y{sub 2}O{sub 2}S luminophors doped with Er{sup 3+} and Yb{sup 3+} ions are produced by means of solid-phase synthesis and deposited onto standard AL123A infrared light-emitting diodes. When excited with 940 nm radiation from a light-emitting diode, the structures exhibit intense visible up-conversion luminescence. A maximal brightness of 2340 cd/m{sup 2} of green and red up-conversion luminescence at corresponding wavelengths around 550 and 600 nm is observed for the Y{sub 2}O{sub 2}S compound doped with 2 at % Er{sup 3+} ions and 6 at % Yb{sup 3+} ions. The ratio of the intensity of green (or red) up-conversion luminescence to the intensity of infrared Stokes luminescence increases with increasing applied voltage. The efficiency of visible emission of the light-emitting diode structures is {eta} = 1.2 lm/W at an applied voltage of 1.5 V.

Gruzintsev, A. N., E-mail: gran@ipmt-hpm.ac.ru [Russian Academy of Sciences, Institute of Problems of Microelectronics Technology (Russian Federation); Barthou, C.; Benalloul, P. [Institute des NanoSciences (France)

2008-03-15T23:59:59.000Z

240

Numerical Modelling of Light Emission and Propagation in (Organic) LEDs with the Green's Tensor  

E-Print Network (OSTI)

light emitting diodes, light emission, light extraction, dipole radiation, stratified media, layered surpasses incandescent sources by a factor of 2 and with further improvements light emitting diodes could on light extraction techniques from inorganic light emitting diodes we recommend chapter 5 in 1 . Organic

Floreano, Dario

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


241

Organic electrophosphorescence device having interfacial layers  

SciTech Connect

Techniques are described for forming an organic light emitting diode device with improved device efficiency. Materials having at least one energy level that is similar to those of a phosphorescent light emitting material in the diode are incorporated into the device to directly inject holes or electrons to the light emitting material.

Choulis, Stelios A. (San Jose, CA); Mathai, Mathew (Santa Clara, CA); Choong, Vi-En (San Jose, CA); So, Franky (Gainesville, FL)

2010-08-10T23:59:59.000Z

242

Highly efficient blue polyfluorene-based polymer light-emitting...  

NLE Websites -- All DOE Office Websites (Extended Search)

of Physics Volume 42 Pagination 5 Abstract A highly efficient blue polymer light-emitting diode based on poly(9,9-di(2-(2-(2-methoxy-ethoxy)ethoxy)ethyl)fluorenyl-2,7-diyl)...

243

Electrical and Optical Enhancement in Internally Nanopatterned Organic Light-Emitting Diodes  

E-Print Network (OSTI)

relationships for single-carrier TCL and IL conditions. Attrap-charge limited regime (TCL), which goes trends throughSCL), trap-charge limited (TCL) and trap-free space-charge

Fina, Michael Dane

2012-01-01T23:59:59.000Z

244

Extremely Efficient Indium-Tin-Oxide-Free Green Phosphorescent Organic Light-Emitting Diodes  

SciTech Connect

This paper demonstrates extremely efficient (?P,max = 118 lm W?1) ITO-free green phosphorescent OLEDs (PHOLEDs) with multilayered, highly conductive poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) films as the anode. The efficiency is obtained without any outcoupling-enhancing structures and is 44% higher than the 82 lm W?1 of similar optimized ITO-anode PHOLEDs. Detailed simulations show that this improvement is due largely to the intrinsically enhanced outcoupling that results from a weak microcavity effect.

Cai, Min; Ye, Zhuo; Xiao, Teng; Liu, Rui; Chen, Ying; Mayer, Robert W.; Biswas, Rana; Ho, Kai-Ming; Shinar, Ruth; Shinar, Joseph

2012-07-12T23:59:59.000Z

245

Infrared proximity sensor using organic light-emitting diode with quantum dots converter  

E-Print Network (OSTI)

-Chen Chen a , Han-Cheng Yeh b , Yu-Chiang Chao c , Hsin-Fei Meng c, , Hsiao-Wen Zan b , Yun-Chi Liang d 360 (PVP 360) polymer matrix cast by water solution. The solid-state photoluminescence quantum

246

A smart active matrix pixelated OLED display; Smart active matrix pixelated Organic Light Emitting Diode display.  

E-Print Network (OSTI)

??An OLED display has been fabricated and successfully tested with an external optical feedback circuit to demonstrate improvement in uniformity. In addition, the process of… (more)

Yu, Jennifer J. (Jennifer Jong-Hwa), 1980-

2004-01-01T23:59:59.000Z

247

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network (OSTI)

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

248

Demonstration Assessment of Light Emitting Diode (LED) Residential Downlights and Undercabinet Lights in the Lane County Tour of Homes, Eugene, Oregon  

SciTech Connect

In August 2008 the Pacific Northwest National Laboratory (PNNL) conducted a light emitting diode (LED) residential lighting demonstration project for the U.S. Department of Energy (DOE), Office of Building Technologies, as part of DOE’s Solid State Lighting (SSL) Technology Demonstration Gateway Program. Two lighting technologies, an LED replacement for downlight lamps (bulbs) and an LED undercabinet lighting fixture, were tested in the demonstration which was conducted in two homes built for the 2008 Tour of Homes in Eugene, Oregon. The homes were built by the Lane County Home Builders Association (HBA), and Future B Homes. The Energy Trust of Oregon (ETO) also participated in the demonstration project. The LED downlight product, the LR6, made by Cree LED Lighting Solutions acts as a screw-in replacement for incandescent and halogen bulbs in recessed can downlights. The second product tested is Phillips/Color Kinetics’ eW® Profile Powercore undercabinet fixture designed to mount under kitchen cabinets to illuminate the countertop and backsplash surfaces. Quantitative and qualitative measurements of light performance and electrical power usage were taken at each site before and after initially installed halogen and incandescent lamps were replaced with the LED products. Energy savings and simple paybacks were also calculated and builders who toured the homes were surveyed for their responses to the LED products. The LED downlight product drew 12 Watts of power, cutting energy use by 82% compared to the 65W incandescent lamp and by 84% compared to the 75W halogen lamp. The LED undercabinet fixture drew 10 watts, cutting energy use by 83% to 90% compared to the halogen product, which was tested at two power settings: a low power 60W setting and a high power 105W setting. The LED downlight consistently provided more light than the halogen and incandescent lamps in horizontal measurements at counter height and floor level. It also outperformed in vertical illuminance measurements taken on the walls, indicating better lateral dispersion of the light. The undercabinet fixture’s light output was midway between the low and high power halogen undercabinet fixture light outputs (35.8 foot candle versus 13.4 fc and 53.4 fc) but it produced a more uniform light (max/min ratio of 7.0 versus 10.8). The color correlated temperature (CCT, the blue or yellowness) of the LED light correlated well with the halogen and incandescent lights (2675 K vs 2700 K). The color rendering of the LED downlight also correlated well at 92 CRI compared to 100 CRI for the halogen and incandescent lamps. The LED undercabinet fixture had measures of 2880 K CCT and 71 CRI compared to the 2700 K and 100 CRI scores for the halogen undercabinet fixture. Builders who toured the homes were surveyed; they gave the LED downlight high marks for brightness, said the undercabinet improved shadows and glare and said both products improved overall visibility, home appearance, and home value. Paybacks on the LED downlight ranged from 7.6 years (assuming electricity cost of 11 c/kWh) to 13.5 years (at 5C/kWh). Paybacks on the LED undercabinet fixture in a new home ranged from 4.4 years (11c/kWh electricity) to 7.6 years (5c/kWh) based on product costs of $95 per LED downlight and $140 per LED undercabinet fixture at 3 hrs per day of usage for the downlight and 2 hrs per day for the undercabinet lighting.

Ton, My K.; Richman, Eric E.; Gilbride, Theresa L.

2008-11-10T23:59:59.000Z

249

Green route synthesis of high quality CdSe quantum dots for applications in light emitting devices  

SciTech Connect

Investigation was made on light emitting diodes fabricated using CdSe quantum dots. CdSe quantum dots were synthesized chemically using olive oil as the capping agent, instead of toxic phosphine. Room temperature photoluminescence investigation showed sharp 1st excitonic emission peak at 568 nm. Bi-layer organic/inorganic (P3HT/CdSe) hybrid light emitting devices were fabricated by solution process. The electroluminescence study showed low turn on voltage ({approx}2.2 V) .The EL peak intensity was found to increase by increasing the operating current. - Graphical abstract: Light emitting diode was fabricated using CdSe quantum dots using olive oil as the capping agent, instead of toxic phosphine. Bi-layer organic/inorganic (P3HT/CdSe) hybrid light emitting device shows strong electroluminescence in the range 630-661 nm. Highlights: Black-Right-Pointing-Pointer CdSe Quantum dots were synthesized using olive oil as the capping agent. Black-Right-Pointing-Pointer Light emitting device was fabricated using CdSe QDs/P3HT polymer heterojunction. Black-Right-Pointing-Pointer The I-V characteristics study showed low turn on voltage at {approx}2.2 V. Black-Right-Pointing-Pointer The EL peak intensity increases with increasing the operating current.

Bera, Susnata, E-mail: susnata.bera@gmail.com [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Singh, Shashi B. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Ray, S.K., E-mail: physkr@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

2012-05-15T23:59:59.000Z

250

Close-packed array of light emitting devices  

SciTech Connect

A close-packed array of light emitting diodes includes a nonconductive substrate having a plurality of elongate channels extending therethrough from a first side to a second side, where each of the elongate channels in at least a portion of the substrate includes a conductive rod therein. The conductive rods have a density over the substrate of at least about 1,000 rods per square centimeter and include first conductive rods and second conductive rods. The close-packed array further includes a plurality of light emitting diodes on the first side of the substrate, where each light emitting diode is in physical contact with at least one first conductive rod and in electrical contact with at least one second conductive rod.

Ivanov, Ilia N.; Simpson, John T.

2013-04-09T23:59:59.000Z

251

Efficient semiconductor light-emitting device and method  

DOE Patents (OSTI)

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Choquette, Kent D. (Albuquerque, NM); Lear, Kevin L. (Albuquerque, NM); Schneider, Jr., Richard P. (Albuquerque, NM)

1996-01-01T23:59:59.000Z

252

Efficient semiconductor light-emitting device and method  

DOE Patents (OSTI)

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

1996-02-20T23:59:59.000Z

253

The Laser DiodeThe Laser Diode Jason HillJason Hill  

E-Print Network (OSTI)

a Laser Diode Works Edge Emitting Laser Diode Operates similar to a Light Emitting DiodeOperates similar to a Light Emitting Diode Active medium is a semiconductor pActive medium is a semiconductor p--n junctionn Operates similar to a Light Emitting DiodeOperates similar to a Light Emitting Diode Active medium

La Rosa, Andres H.

254

An optimal light-extracting overlayer, inspired by the lantern of a Photuris firefly, to improve the external efficiency of existing light-emitting diodes  

E-Print Network (OSTI)

Actual light emission diodes (LED) have most often good internal efficiencies but poor external efficiencies due to total internal reflection at the air interface. In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is investigated. The purpose of this overlayer is to improve light extraction into air, after the photons have been generated in the diode's high refractive-index active material. The layer design is inspired by the microstructure found in the firefly Photuris sp., described by Bay et al. : a surface with an asymmetrical triangular profile (a "factory-roof" shape), developed on the scale of a few micrometers, thus somewhat larger than usually suggested in the related literature. The profile of the overlayer corrugated surface of the coating film was copied from the natural model. Yet, the actual dimensions and material composition have been optimized to take into account the high refractive index of the GaN diode stack. The optimization proc...

Bay, Annick; Sarrazin, Michael; Belarouci, Ali; Aimez, Vincent; Francis, Laurent A; Vigneron, Jean Pol

2012-01-01T23:59:59.000Z

255

Fabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the ZnO/GaN heterojunction light emitting diodes  

SciTech Connect

This article reports fabrication of n-ZnO photonic crystal/p-GaN light emitting diode (LED) by nanosphere lithography to further booster the light efficiency. In this article, the fabrication of ZnO photonic crystals is carried out by nanosphere lithography using inductively coupled plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the n-ZnO/p-GaN heterojunction LEDs. The CH{sub 4}/H{sub 2}/Ar mixed gas gives high etching rate of n-ZnO film, which yields a better surface morphology and results less plasma-induced damages of the n-ZnO film. Optimal ZnO lattice parameters of 200 nm and air fill factor from 0.35 to 0.65 were obtained from fitting the spectrum of n-ZnO/p-GaN LED using a MATLAB code. In this article, we will show our recent result that a ZnO photonic crystal cylinder has been fabricated using polystyrene nanosphere mask with lattice parameter of 200 nm and radius of hole around 70 nm. Surface morphology of ZnO photonic crystal was examined by scanning electron microscope.

Chen, Shr-Jia; Chang, Chun-Ming; Kao, Jiann-Shiun; Chen, Fu-Rong; Tsai, Chuen-Horng [Engineering and System Science, National Tsing Hua University, Hsinchu, 30013 Taiwan (China); Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, 300 Taiwan (China); Engineering and System Science, National Tsing Hua University, Hsinchu, 30013 Taiwan (China)

2010-07-15T23:59:59.000Z

256

LIGHT EMITTING DlODE TESTING AND ANALYSIS  

SciTech Connect

This report covers the work done to analyze the optical output of a Light Emitting Diode. This diode consists' of a Monsanto MV2 LED chip in an MV50 package. A calculator based instrumentation system is described including programming techniques used to reduce and display data. A Light Instrumentation System with specially designed fiber optic cables is described which gathers data for processing by the calculator based instrumentation system. Future work will include analysis of the RCA 8571 Photomultiplier Tube.

Bowers, J L; Allen, T E

1973-08-01T23:59:59.000Z

257

Quantum Dot Light-emitting Diodes  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, Materials Science & Technology 2013. Symposium, Optical Nanomaterials for Photonics/Biophotonics. Presentation Title, Quantum ...

258

The Josephson light-emitting diode  

E-Print Network (OSTI)

We consider an optical quantum dot where an electron level and a hole level are coupled to respective superconducting leads. We find that electrons and holes recombine producing photons at discrete energies as well as a continuous tail. Further, the spectral lines directly probe the induced superconducting correlations on the dot. At energies close to the applied bias voltage eV, a parameter range exists, where radiation proceeds in pairwise emission of polarization correlated photons. At energies close to 2eV, emitted photons are associated with Cooper pair transfer and are reminiscent of Josephson radiation. We discuss how to probe the coherence of these photons in a SQUID geometry via single photon interference.

Patrik Recher; Yuli V. Nazarov; Leo P. Kouwenhoven

2009-02-25T23:59:59.000Z

259

1.0. Semiconductor Diodes 1 of 27 1.2 Ideal Diode  

E-Print Network (OSTI)

-high efficiency light emitting diode lamps. As an educational institution, DTCC has shown a serious commitment

Allen, Gale

260

All-small-molecule efficient white organic light-emitting diodes by multi-layer blade coating  

E-Print Network (OSTI)

coating Han-Cheng Yeh a , Hsin-Fei Meng b, , Hao-Wu Lin c, , Teng-Chih Chao d , Mei-Rurng Tseng d , Hsiao the electron transport layer. In general highly water-absorbing materials like CsF or Li salt doping

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
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261

Effects of metallic absorption and the corrugated layer on the optical extraction efficiency of organic light-emitting diodes  

E-Print Network (OSTI)

The absorption of a metallic cathode in OLEDs is analyzed by using FDTD calculation. As the light propagates parallel to the layer, the intensity of Ez polarization decreases rapidly. The intensity at 2.0 um from the dipole is less than a quarter of that at 0.5 um. The strong absorption by a cathode can be a critical factor when considering the increase of optical extraction by means of bending the optical layers. The calculation indicates that the corrugation of layers helps the guided light escape the guiding layer, but also increases the absorption into a metallic cathode. The final optical output power of the corrugated OLED can be smaller than that of the flat OLED. On the contrary, the corrugated structure with a non-absorptive cathode increases the optical extraction by nearly two times.

Lee, Baek-Woon

2011-01-01T23:59:59.000Z

262

Development of hybrid organic-inorganic light emitting diodes using conducting polymers deposited by oxidative chemical vapor deposition process  

E-Print Network (OSTI)

Difficulties with traditional methods of synthesis and film formation for conducting polymers, many of which are insoluble, motivate the development of CVD methods. Indeed, conjugated polymers with rigid linear backbones ...

Chelawat, Hitesh

2010-01-01T23:59:59.000Z

263

LASER DIODE TECHNOLOGY AND APPLICATIONS Submitted to  

E-Print Network (OSTI)

and a normal diode and a light emitting diode. I will also define the terms homojunction and heterojunction, and is the main source of light in a light-emitting diode. Under suitable conditions, the electron and the hole

La Rosa, Andres H.

264

F5, Influence of Geometry on Silicon Carbide JBS Diodes Conduction  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

265

Organic LEDs for optoelectronic neural networks  

E-Print Network (OSTI)

In this thesis, I investigate the characteristics of Organic Light Emitting Diodes (OLEDs) and assess their suitability for use in the Compact Optoelectronic Integrated Neural (COIN) coprocessor. The COIN coprocessor, a ...

Mars, Risha R

2012-01-01T23:59:59.000Z

266

Bright three-band white light generated from CdSe/ZnSe quantum dot-assisted Sr{sub 3}SiO{sub 5}:Ce{sup 3+},Li{sup +}-based white light-emitting diode with high color rendering index  

SciTech Connect

In this study, bright three-band white light was generated from the CdSe/ZnSe quantum dot (QD)-assisted Sr{sub 3}SiO{sub 5}:Ce{sup 3+},Li{sup +}-based white light-emitting diode (WLED). The CdSe/ZnSe core/shell structure was confirmed by energy dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy. The CdSe/ZnSe QDs showed high quantum efficiency (79%) and contributed to the high luminous efficiency ({eta}{sub L}) of the fabricated WLED. The WLED showed bright natural white with excellent color rendering property ({eta}{sub L}=26.8 lm/W, color temperature=6140 K, and color rendering index=85) and high stability against the increase in forward bias currents from 20 to 70 mA.

Jang, Ho Seong; Kwon, Byoung-Hwa; Jeon, Duk Young [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Yang, Heesun [Department of Materials Science and Engineering, Hongik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791 (Korea, Republic of)

2009-10-19T23:59:59.000Z

267

Hybrid organic/quantum dot thin film structures and devices  

E-Print Network (OSTI)

Organic light emitting diodes have undergone rapid advancement over the course of the past decade. Similarly, quantum dot synthesis has progressed to the point that room temperature highly efficient photoluminescence can ...

Coe-Sullivan, Seth (Seth Alexander)

2005-01-01T23:59:59.000Z

268

Electronic Properties of Disordered Organic Semiconductors via QM/MM Simulations  

E-Print Network (OSTI)

Organic semiconductors (OSCs) have recently received significant attention for their potential use in photovoltaic, light emitting diode, and field effect transistor devices. Part of the appeal of OSCs is the disordered, ...

Difley, Seth

269

Enhancing the efficiency of organic LEDs through spin-orbit coupling of charge-transfer states  

E-Print Network (OSTI)

In this thesis, the possibility of enhancing the efficiency of small molecule organic light-emitting diodes through spin-orbit effects is examined. Because only singlet spin states, statistically one quarter of the total ...

Rivoire, Kelley (Kelley E.)

2006-01-01T23:59:59.000Z

270

Research Resources and Centers Research plays an integral role in Rensselaer's vision of the  

E-Print Network (OSTI)

in materials, devices, systems, nanotechnology, light emitting diodes (LEDs), organic light emitting diodes

Varela, Carlos

271

MICROCAVITYMICROCAVITY PLASMA SCIENCE AND RECENTPLASMA SCIENCE AND RECENT APPLICATIONS: BOUNDAPPLICATIONS: BOUND--FREE COUPLING, TRANSISTORFREE COUPLING, TRANSISTOR  

E-Print Network (OSTI)

=> Design Flexibility · Environmentally Friendly Light Emitting Diode Organic Light Emitting Diode LIGHTING

Shyy, Wei

272

Process development for the fabrication of light emitting vacuum field emission triodes  

E-Print Network (OSTI)

In order to be widely accepted by industry, the field of vacuum microelectronics is in need of a highly manufacturable and integrable device. A vacuum diode meeting these requirements has been developed at Texas A&M University by Weichold, et al. Legg has extended the diode structure by designing a vacuum triode. This work deals with development of a process for fabricating the triode structure using current microelectronic processing techniques. Subsequently, triodes are fabricated for testing. Light emitting diodes and triodes are also fabricated to address the feasibility of their application to flat panel displays.

Williams, Roger T.

1994-01-01T23:59:59.000Z

273

Light emitting device having peripheral emissive region  

DOE Patents (OSTI)

Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.

Forrest, Stephen R

2013-05-28T23:59:59.000Z

274

Resonant energy transfer in light harvesting and light emitting applications.  

E-Print Network (OSTI)

??The performance of light emitting and light harvesting devices is improved by utilising resonant energy transfer. In lighting applications, the emission energy of a semiconductor… (more)

Chanyawadee, Soontorn

2009-01-01T23:59:59.000Z

275

Light-Emitting Diode Street and Area Lighting Technologies Assessment  

Science Conference Proceedings (OSTI)

Iberdrola has been investigating the use of energy-efficient technologies and systems for several years to better understand the needs of their customers in both residential and commercial sectors. Through a combination of Ibedrola’s own work and their membership in the Electric Power Research Institute (EPRI) Energy Efficiency Program 170, Iberdrola has kept up to date on the developments of various energy efficiency and distributed generation options. Although energy-efficiency technologies ...

2014-01-09T23:59:59.000Z

276

Understanding Drooping Light Emitting Diodes CEEM | U.S. DOE...  

Office of Science (SC) Website

Impact Understanding "droop" may result in cheaper, more efficient LEDs; LEDs are more energy efficient, smaller, and longer-lived than incandescent lamps or fluorescent...

277

Zinc Oxide and Nitride Nanowire Based Light Emitting Diodes  

E-Print Network (OSTI)

light sources have wasted emission and energy as can be seenor in other words, wasted electrical energy). Extraction

Lai, Elaine Michelle

2009-01-01T23:59:59.000Z

278

Indium Recovery from Discarded Light Emitting Diode (LED) Liquid ...  

Science Conference Proceedings (OSTI)

... devices, causing the excessive discharge of LCD, decreasing the landfills life cycle. ... Life Cycle Based Greenhouse Gas Footprints of Metal Production with ...

279

Zinc Oxide and Nitride Nanowire Based Light Emitting Diodes  

E-Print Network (OSTI)

1-x)Ga(x)N alloys: Full-solar-spectrum photovoltaic materialas compared to solar spectrum, taken from LBL website (as compared to solar spectrum, taken from LBL website (50)

Lai, Elaine Michelle

2009-01-01T23:59:59.000Z

280

Energy Savings Estimates of Light Emitting Diodes in Niche Lighting...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

in Niche Lighting Applications Prepared for: Building Technologies Program Office of Energy Efficiency and Renewable Energy U.S. Department of Energy Prepared by: Navigant...

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Toxicity and Resource Depletion Potentials of Light-Emitting Diodes  

Science Conference Proceedings (OSTI)

2010 Vittorio de Nora Award Winner: Designing Crushing and Grinding Circuits for ... Materialization of Manganese by Selective Precipitation from Used Battery.

282

Commercialization of Quantum Dot White Light Emitting Diode technology  

E-Print Network (OSTI)

It is well known that the use of high-brightness LEDs for illumination has the potential to substitute conventional lighting and revolutionize the lighting industry over the next 10 to 20 years. However, successful penetration ...

Zhao, Xinyue, M. Eng. Massachusetts Institute of Technology

2006-01-01T23:59:59.000Z

283

Effect of mechanical vibrations on light emitting diode luminaires.  

E-Print Network (OSTI)

??In this work, a LED and two types of Compact fluorescent lamps were investigated for the intensity variation due to mechanical vibrations in the range… (more)

Paladugu, Jayalakshmi

2009-01-01T23:59:59.000Z

284

Nanobeam Photonic Crystal Cavity Light-Emitting Diodes  

E-Print Network (OSTI)

We present results on electrically driven nanobeam photonic crystal cavities formed out of a lateral p-i-n junction in gallium arsenide. Despite their small conducting dimensions, nanobeams have robust electrical properties with high current densities possible at low drive powers. Much like their two-dimensional counterparts, the nanobeam cavities exhibit bright electroluminescence at room temperature from embedded 1,250 nm InAs quantum dots. A small room temperature differential gain is observed in the cavities with minor beam self-heating suggesting that lasing is possible. These results open the door for efficient electrical control of active nanobeam cavities for diverse nanophotonic applications.

Shambat, Gary; Petykiewicz, Jan; Mayer, Marie A; Sarmiento, Tomas; Harris, James; Haller, Eugene E; Vuckovic, Jelena

2011-01-01T23:59:59.000Z

285

Highly Efficient Polymer Light-Emitting Diodes Using Graphene ...  

Science Conference Proceedings (OSTI)

A30: Study on Super Stable All-solid-state Battery at High Temperature · A3: Investigation on Co-combustion Kinetics of Anthracite Coal and Biomass Char by  ...

286

Understanding Drooping Light Emitting Diodes CEEM | U.S. DOE...  

Office of Science (SC) Website

A RSS Feeds FeedbackShare Page Scientific Achievement New calculations demonstrate that LED "droop" is dominated by multi-particle interactions. Droop occurs when increasing...

287

Space charge spectroscopy of integrated quantum well infrared photodetectorlight emitting diode  

E-Print Network (OSTI)

Space charge spectroscopy of integrated quantum well infrared photodetector±light emitting diode M ± light emitting diode (QWIP-LED). Quasistatic capacitance±voltage (C±V ) characteristics under reverse.V. All rights reserved. Keywords: Quantum-well infrared photodetector; Light-emitting diode; Space charge

Matsik, Steven G.

288

Striking a Balance Between Energy and the Environment in the Columbia River Basin Sockeye surprise  

E-Print Network (OSTI)

-state lighting -- light-emit- ting diodes (LED) and organic light-emitting diodes (OLED) -- appear to offer

289

Organization USPostagePaid  

E-Print Network (OSTI)

efficiency of a light emitting diode to the open circuit voltage of a solar cell.28 A non-ideal PC will also

Wu, Junqiao

290

Charge Transport in Organic Semiconductors Veaceslav Coropceanu, Jero^me Cornil,, Demetrio A. da Silva Filho, Yoann Olivier, Robert Silbey,# and  

E-Print Network (OSTI)

electrodes in the case of light-emitting diodes or field-effect transistors or generated within the materials

Wu, Zhigang

291

High Efficiency Organic Light Emitting Devices for Lighting  

SciTech Connect

Incorporate internal scattering layers and microlens arrays in high efficiency OLED to achieve up to 70% EQE.

So, Franky; Tansu, Nelson; Gilchrist, James

2013-06-30T23:59:59.000Z

292

Oxycarbonitride phosphors and light emitting devices using the same  

DOE Patents (OSTI)

Disclosed herein is a novel family of oxycarbidonitride phosphor compositions and light emitting devices incorporating the same. Within the sextant system of M--Al--Si--O--N--C--Ln and quintuplet system of M--Si--O--N--C--Ln (M=alkaline earth element, Ln=rare earth element), the phosphors are composed of either one single crystalline phase or two crystalline phases with high chemical and thermal stability. In certain embodiments, the disclosed phosphor of silicon oxycarbidonitrides emits green light at wavelength between 530-550 nm. In further embodiments, the disclosed phosphor compositions emit blue-green to yellow light in a wavelength range of 450-650 nm under near-UV and blue light excitation.

Li, Yuanqiang; Romanelli, Michael Dennis; Tian, Yongchi

2013-10-08T23:59:59.000Z

293

Laser-induced implantation of silver particles into poly(vinyl alcohol) films and its application to electronic-circuit fabrication on encapsulated organic electronics  

Science Conference Proceedings (OSTI)

In this study, we propose a new laser-induced implantation based approach for embedding electronic interconnects in this study. Direct implantations of silver particles, vaporized by a pulsed laser from a silver film initially pre-coated on a transparent ... Keywords: Embedded electronic circuits, Encapsulation, Laser-induced implantation, Organic thin-film transistors, Polymeric light-emitting diodes

Kun-Tso Chen; Yu-Hsuan Lin; Jeng-Rong Ho; J.-W. John Cheng; Sung-Ho Liu; Jin-Long Liao; Jing-Yi Yan

2010-04-01T23:59:59.000Z

294

Wide-Area Thermal Processing of Light-Emitting Materials  

Science Conference Proceedings (OSTI)

Silicon carbide based materials and devices have been successfully exploited for diverse electronic applications. However, they have not achieved the same success as Si technologies due to higher material cost and higher processing temperatures required for device development. Traditionally, SiC is not considered for optoelectronic applications because it has an indirect bandgap. However, AppliCote Associates, LLC has developed a laser-based doping process which enables light emission in SiC through the creation of embedded p-n junctions. AppliCote laser irradiation of silicon carbide allows two different interaction mechanisms: (1) Laser conversion or induced phase transformation which creates carbon rich regions that have conductive properties. These conductive regions are required for interconnection to the light emitting semiconducting region. (2) Laser doping which injects external dopant atoms into the substrate that introduces deep level transition states that emit light when electrically excited. The current collaboration with AppliCote has focused on the evaluation of ORNL's unique Pulse Thermal Processing (PTP) technique as a replacement for laser processing. Compared to laser processing, Pulse Thermal Processing can deliver similar energy intensities (20-50 kW/cm2) over a much larger area (up to 1,000 cm2) at a lower cost and much higher throughput. The main findings of our investigation; which are significant for the realization of SiC based optoelectronic devices, are as follows: (1) The PTP technique is effective in low thermal budget activation of dopants in SiC similar to the laser technique. The surface electrical conductivity of the SiC samples improved by about three orders of magnitude as a result of PTP processing which is significant for charge injection in the devices; (2) The surface composition of the SiC film can be modified by the PTP technique to create a carbon-rich surface (increased local C:Si ratio from 1:1 to 2.9:1). This is significant as higher thermal and electrical conductivities of the surface layer are critical for a successful development of integrated optoelectronic devices; and (3) PTP provides low thermal budget dopant activation with a controlled depth profile, which can be exploited for high performance device development with selective patterning of the substrate. This project has successfully demonstrated that a low thermal budget annealing technique, such as PTP, is critical to defining the path for low cost electronic devices integrated on glass or polymeric substrates. This project is complimentary to the goals of the Solid State Lighting Program within DOE. It involves new manufacturing techniques for light emitting materials that are potentially much lower cost and energy efficient than existing products. Significant opportunity exists for further exploration of AppliCote's material and device technology in combination with ORNL's PTP technique, modeling, and characterization capabilities.

Duty, C.; Quick, N. (AppliCote Associates, LLC)

2011-09-30T23:59:59.000Z

295

P-78 / H. J. Peng 516 SID 03 DIGEST  

E-Print Network (OSTI)

, Clear Water Bay, Kowloon, Hong Kong Abstract An organic light emitting diode with a microcavity calculations. 1. Introduction Organic light emitting diodes (OLEDs) are challenging liquid crystal displays organic light emitting diodes (b) the normal direction electroluminescent spectra of devices

296

Fabrication and optimization of light emitting devices with core-shell quantum dots  

E-Print Network (OSTI)

Quantum dot light emitting devices (QD-LEDs) are promising options for the next generation of solid state lighting, color displays, and other optoelectronic applications. Overcoating quantum dots (QDs) -- semiconducting ...

Song, Katherine Wei

2013-01-01T23:59:59.000Z

297

Spin-out in cutting-edge light source technology  

E-Print Network (OSTI)

and Biochemsitry Organic light emitting diode (OLED) synthesis Information and Safety Research Facilities Education: Vojislav Sradnov Faculty Supervisor: Department: Chemistry and Biochemistry ORGANIC LIGHT EMITTING DIODE

Mottram, Nigel

298

Zakya H. Kafafi  

NLE Websites -- All DOE Office Websites (Extended Search)

Division at Naval Research Laboratory. Her research is focused on organic light emitting diode (OLED) material and devices.Expertise: organic light emitting diode (OLED)...

299

Universit Bordeaux 1 Les Sciences et les Technologies au service de l'Homme et de l'Environnement  

E-Print Network (OSTI)

and Biochemsitry Organic light emitting diode (OLED) synthesis Information and Safety Research Facilities Education: Vojislav Sradnov Faculty Supervisor: Department: Chemistry and Biochemistry ORGANIC LIGHT EMITTING DIODE

300

Stochastic modeling of molecular charge transport networks Bjorn Baumeier,1,  

E-Print Network (OSTI)

.g., organic light emitting diode and organic photovoltaic device). Note that ``hybrid'' molecules are defined

Schmidt, Volker

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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301

Highlights 133 Semana 26 30 Abril, 2010  

E-Print Network (OSTI)

.g., organic light emitting diode and organic photovoltaic device). Note that ``hybrid'' molecules are defined

302

Solid-State Lighting Home Page for Semiconductor light emitting diodes  

NLE Websites -- All DOE Office Websites (Extended Search)

Since 04/21/2002 Since 04/21/2002 Solid-State Lighting Archival Website As of September 1, 2006, this website is not being actively maintained. We hope that the collected news items, tracking reports, literature summaries, and links to various industry resources will be of archival value to the SSL community. Please visit Sandia's current and active Solid-State Lighting Energy Frontier Research Center website at http://ssls.sandia.gov/. Solid-State Lighting Science Energy Frontier Research Center The Mission of this site was to provide a comprehensive portal to the emerging knowledge that will enable the promise of solid-state lighting The site was active between December 2001 and September 2006, and the goal was: " Â… to gather together information relevant to solid-state lighting, and

303

An Engineering-Economic Analysis of White Light-Emitting Diodes...  

NLE Websites -- All DOE Office Websites (Extended Search)

bulbs by the end of this decade. However, a large literature indicates that households do not make their decisions using pure engineering-economic evaluations. We compare...

304

Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths  

E-Print Network (OSTI)

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300- 1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enahnce the electrically driven emission in a device via Purcell effect. A narrow ({\\Delta}{\\lambda} = 0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4 mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects a...

Shakoor, A; Cardile, P; Portalupi, S L; Gerace, D; Welna, K; Boninelli, S; Franzo, G; Priolo, F; Krauss, T F; Galli, M; Faolain, L O

2013-01-01T23:59:59.000Z

305

Illuminating Solar Decathlon Homes: Exploring Next Generation Lighting Technology - Light Emitting Diodes  

DOE Green Energy (OSTI)

This report was prepared by PNNL for the US Department of Energy Building Technologies Program, Solid-State Lighting Program. The report will be provided to teams of university students who are building houses for the 2009 Solar Decathlon, a home design competition sponsored in part by DOE, to encourage teams to build totally solar powered homes. One aspect of the competition is lighting. This report provides the teams with information about LED lighting that can help them determine how they incorporate LED lighting into their homes. The report provides an overview of LED technology, a status of where LED technology is today, questions and answers about lighting quality, efficiency, lifetime etc.; numerous examples of LED products; and several weblinks for further research.

Gordon, Kelly L.; Gilbride, Theresa L.

2008-05-22T23:59:59.000Z

306

Layering Mismatched Lattices Creates Long-Sought-After Green Light-Emitting Diode (Fact Sheet)  

SciTech Connect

Scientists at the National Renewable Energy Laboratory (NREL) invent a deep green LED that can lead to higher-efficiency white light, lower electric bills.

Not Available

2011-02-01T23:59:59.000Z

307

Demonstration Assessment of Light-Emitting Diode (LED) Street Lighting Host Site: Lija Loop, Portland, Oregon  

SciTech Connect

This report describes the process and results of a demonstration of solid-state lighting (SSL) technology in a residential street lighting application, under the U.S. Department of Energy GATEWAY Solid-State Lighting Technology Demonstration Program. In this project, eight 100W (nominal) high-pressure sodium cobra head fixtures were replaced with a like number of LED street light luminaires manufactured by Leotek, Inc. The Leotek product achieved an estimated payback in the Lija Loop installation of about 20 years for replacement scenarios and a much shorter 7.6 years for new installations. Much of the associated energy savings (55%) supporting these payback periods, however, were achieved by reducing average horizontal photopic illuminance a similar amount (53%). Examined from a different perspective, the measured performance suggests that the Leotek product is at approximate parity with the HPS cobra head in terms of average delivered photopic illumination for a given power consumption. HPS comprises the second most efficacious street lighting technology available, exceeded only by low pressure sodium (LPS). LPS technology is not considered suitable for most street lighting applications due to its monochromatic spectral output and poor color rendering ability; therefore, this LED product is performing at an efficiency level comparable to its primary competition in this application.

Kinzey, Bruce R.; Myer, Michael

2009-11-01T23:59:59.000Z

308

Comparing Light-Emitting Diode (LED) Street and Area Lighting to Traditional Lighting Technologies  

Science Conference Proceedings (OSTI)

In 2008, the Tennessee Valley Authority (TVA) and Benton County Electric System partnered with the Electric Power Research Institute (EPRI) to launch an investigation into the use of LED technology for area lighting. The goal of the project—called the LED Street and Area Lighting Demonstration—was to discover a better light bulb, one that not only meets the outdoor lighting requirements of consumers, but also uses less electricity in doing so. This case study discusses the results of ...

2012-09-28T23:59:59.000Z

309

Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes  

SciTech Connect

The technology on the large overlap InGaN QWs developed in this program is currently implemented in commercial technology in enhancing the internal quantum efficiency in major LED industry in US and Asia. The scientific finding from this work supported by the DOE enabled the implementation of this step-like staggered quantum well in the commercial LEDs.

Tansu, Nelson; Dierolf, Volkmar; Huang, Gensheng; Penn, Samson; Zhao, Hongping; Liu, Guangyu; Li, Xiaohang; Poplawsky, Jonathan

2011-07-14T23:59:59.000Z

310

Design and modelling of novel waveguide and light-emitting-diode-based photoreactors.  

E-Print Network (OSTI)

??In this dissertation, investigations on a range of photocatalytic reactors based on waveguides (optical fibres and quartz tubes) are presented. A study on a coupled… (more)

Denny, Frans

2010-01-01T23:59:59.000Z

311

Optimization of a light emitting diode based projection stereolithography system and its applications.  

E-Print Network (OSTI)

??The rapid manufacture of complex three-dimensional components has eluded researchers for decades. Several manufacturing options have been limited by either speed or the ability to… (more)

Alonso, Matthew P.

2010-01-01T23:59:59.000Z

312

Light-emitting diodes from polyfluorenes: characterisation and stability of performance  

E-Print Network (OSTI)

.......................................................................................................... 10 2.4 Polymer LEDs ..................................................................................................................................... 12 2.5 Materials... present between a pair of atoms, the atoms are said to be double-bonded, with the overall molecular orbital structure depicted in Figure 2.5. Figure 2.5: Double-bonded pair of atoms, with ?-bond in green and ?-bond in purple. 2.1.2 Semiconducting...

Seeley, Alexander J. A. B.

313

Entanglement transfer from electron spins to photons in spin light-emitting diodes containing quantum dots  

E-Print Network (OSTI)

We show that electron recombination using positively charged excitons in single quantum dots provides an efficient method to transfer entanglement from electron spins onto photon polarizations. We propose a scheme for the production of entangled four-photon states of GHZ type. From the GHZ state, two fully entangled photons can be obtained by a measurement of two photons in the linear polarization basis, even for quantum dots with observable fine structure splitting for neutral excitons and significant exciton spin decoherence. Because of the interplay of quantum mechanical selection rules and interference, maximally entangled electron pairs are converted into maximally entangled photon pairs with unity fidelity for a continuous set of observation directions. We describe the dynamics of the conversion process using a master-equation approach and show that the implementation of our scheme is feasible with current experimental techniques.

Veronica Cerletti; Oliver Gywat; Daniel Loss

2004-11-09T23:59:59.000Z

314

Experimental and theoretical insights into the sequential oxidations of 3-2spiro molecules derived from oligophenylenes  

E-Print Network (OSTI)

been the design of efficient and stable blue light emitters for organic light-emitting diodes (OLED in organic light emitting diode (OLED) leading to violet to blue light emitting devices. [31

Recanati, Catherine

315

Ultra-thin ohmic contacts for p-type nitride light emitting devices  

DOE Patents (OSTI)

A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.

Raffetto, Mark (Raleigh, NC); Bharathan, Jayesh (Cary, NC); Haberern, Kevin (Cary, NC); Bergmann, Michael (Chapel Hill, NC); Emerson, David (Chapel Hill, NC); Ibbetson, James (Santa Barbara, CA); Li, Ting (Ventura, CA)

2012-01-03T23:59:59.000Z

316

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS Vol. 12, No. 3, March 2010, p. 605 -609 The effect of laser pulse length upon laser-induced  

E-Print Network (OSTI)

], ceramics [9] and functional organic light-emitting diode (OLED) pixels [10] have all been transferred

317

Materials Research Lab -Research Internships in Science and Engineering http://www.mrl.ucsb.edu/mrl/outreach/educational/RISE/interns03.html[5/10/12 9:53:34 AM  

E-Print Network (OSTI)

and Biochemsitry Organic light emitting diode (OLED) synthesis Information and Safety Research Facilities Education

Bigelow, Stephen

318

METHODOLOGY Open Access Delivering high-resolution landmarks using inkjet  

E-Print Network (OSTI)

transistors, sensors and organic light emitting diode arrays [1]. If functional materials and patterns

319

METAL ORGANIC VAPOR PHASE EPITAXY  

Science Conference Proceedings (OSTI)

Jun 4, 2004 ... used to texture the surface of a Light Emitting Diode (LED) structure, enhancing light extraction by a factor of 2 to 3 times. This paper will.

320

Extraction of electronic parameters of Schottky diode based on an organic Orcein  

Science Conference Proceedings (OSTI)

An Au/Orcein/p-Si/Al device was fabricated and the current-voltage measurements of the devices showed diode characteristics. Then the current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics of the device were ... Keywords: Capacitance measurements, Ideality factor, Orcein, Organic materials, Schottky barrier height

?akir Aydo?an; ímit ?ncekara; A. R. Deniz; Abdulmecit Türüt

2010-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

OSP WEEKLY FUNDING BULLETIN Volume 5, Issue 33 August 15, 2011  

E-Print Network (OSTI)

of interest are: (1) (Light Emitting Diode) Emitter Materials Research; (2) (Light Emitting Diode) Down-converters; (3) Novel Organic Light Emitting Diodes Materials and Structures; and (4) (Organic Light Emitting Diode) Light Extraction Approaches. DEPARTMENT OF HEALTH AND HUMAN SERVICES (DHHS) ­ INCLUDES NIH Pilot

Alabama in Huntsville, University of

322

Entangled Light Emission From a Diode  

SciTech Connect

Electrically-driven entangled photon generation is demonstrated for the first time using a single semiconductor quantum dot embedded in a light emitting diode structure. The entanglement fidelity is shown to be of sufficient quality for applications such as quantum key distribution.

Stevenson, R. M.; Shields, A. J. [Toshiba Research Europe Limited, 208 Cambridge Science Park, Cambridge CB4 0GZ (United Kingdom); Salter, C. L. [Toshiba Research Europe Limited, 208 Cambridge Science Park, Cambridge CB4 0GZ (United Kingdom); Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Farrer, I.; Nicoll, C. A.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

2011-12-23T23:59:59.000Z

323

Sixth Northwest Conservation and Electric Power Plan Chapter 4: Conservation Supply Assumptions  

E-Print Network (OSTI)

-thirds of commercial savings are in lighting systems. New technologies like light-emitting diodes and improved lighting, recent advances in solid- state lighting--light-emitting diodes (LED) and organic light-emitting diodes. The availability of new lights such as light-emitting diodes (LED) and improved emerging technologies

324

Gao Liu  

NLE Websites -- All DOE Office Websites (Extended Search)

electrode binder design and synthesis, electrolyte and additives. Organic light emitting diode (OLED): Light emitting polymer design and synthesis, device assembly and...

325

Life tests of Nichia AlGaN/InGaN/GaN blue-light-emitting diodes  

SciTech Connect

We report on results of life testing Nichia NLPB500 blue LEDs in a temperature controlled chamber, with computer automation of equipment operation and data collection. The tests began with 18 newer (Nichia batch 4B0001) and two older (Nichia batch S403024, acquired a year earlier) LEDs, operated at 20 mA continuous wave (CW) and 23{degree}C. Light from each LED was coupled to an optical fiber and fed directly to individual photodetectors. General trend for the 18 newer LEDs was for the output intensity to increase at a faster rate within the first 50 h and then at a slower rate of the remainder of the first test. The output intensity of the two older LEDs increase within the first 50 h then decreased during the remainder of the first 1000 h. All 20 of the LEDs in the first 1000-h test were subjected to a second 1650-h test at 23{degree}C and at currents 20-70 mA CW. Only one LED, an older device, suffered a soft failure during this second test. The remaining LEDs underwent a third test at 30{degree}C and a fourth test at 35{degree}C, all at various currents. We will perform failure analysis.

Helms, C.J.; Berg, N.H.; Barton, D.L.; Osinski, M

1996-03-01T23:59:59.000Z

326

Demonstration Assessment of Light-Emitting Diode (LED) Retrofit Lamps at Intercontinental Hotel in San Francisco, CA  

SciTech Connect

This document is a report of observations and results obtained from a lighting demonstration project conducted under the U.S. Department of Energy (DOE) GATEWAY Demonstration Program. The program supports demonstrations of high-performance solid-state lighting (SSL) products in order to develop empirical data and experience with in-the-field applications of this advanced lighting technology. The DOE GATEWAY Demonstration Program focuses on providing a source of independent, third-party data for use in decision-making by lighting users and professionals; this data should be considered in combination with other information relevant to the particular site and application under examination. Each GATEWAY Demonstration compares SSL products against the incumbent technologies used in that location. Depending on available information and circumstances, the SSL product may also be compared to alternate lighting technologies. Though products demonstrated in the GATEWAY program have been prescreened and tested to verify their actual performance, DOE does not endorse any commercial product or in any way guarantee that users will achieve the same results through use of these products.

Miller, Naomi J.; Curry, Ku'Uipo J.

2010-11-01T23:59:59.000Z

327

Demonstration Assessment of Light-Emitting Diode (LED) Roadway Lighting on Residential and Commercial Streets in Palo Alto, CA  

SciTech Connect

This report is part of a GATEWAY demonstration that replaced existing HPS streetlights with two different types of LED products and one induction product. Energy savings ranged from 6% to 44%.

Myer, Michael; Kinzey, Bruce R.; Tam, Christine

2010-06-24T23:59:59.000Z

328

Demonstration Assessment of Light-Emitting Diode (LED) Roadway Lighting at the I-35W Bridge, Minneapolis, MN  

SciTech Connect

This report describes the process and results of a demonstration of solid-state lighting (SSL) technology conducted in 2009 at the recently reconstructed I-35W bridge in Minneapolis, MN. The project was supported under the U.S. Department of Energy (DOE) Solid-State Lighting GATEWAY Technology Demonstration Program. Other participants in the demonstration project included the Minnesota Department of Transportation (Mn/DOT), Federal Highways Administration (FHWA), and BetaLED™ (a division of Ruud Lighting). Pacific Northwest National Laboratory (PNNL) conducted the measurements and analysis of the results. DOE has implemented a three-year evaluation of the LED luminaires in this installation in order to develop new longitudinal field data on LED performance in a challenging, real-world environment. This document provides information through the initial phase of the I-35W bridge project, up to and including the opening of the bridge to the public and the initial feedback received on the LED lighting installation from bridge users. Initial findings of the evaluation are favorable, with minimum energy savings level of 13% for the LED installation relative to the simulated base case using 250W high-pressure sodium (HPS) fixtures. The LEDs had an average illuminance level of 0.91 foot candles compared to 1.29 fc for the HPS lamps. The LED luminaires cost $38,000 more than HPS lamps, yielding a lengthy payback period, however the bridge contractor had offered to include the LED luminaires as part of the construction package at no additional cost. One potentially significant benefit of the LEDs in this installation is avoiding rolling lane closures on the heavily-traveled interstate bridge for the purpose of relamping the HPS fixtures. Rolling lane closures involve multiple crew members and various maintenance and safety vehicles, diversion of traffic, as well as related administrative tasks (e.g., approvals, scheduling, etc.). Mn/DOT records show an average cost of relamping fixtures along interstate roadways of between $130-150 per pole. The previous bridge saw a lamp mortality rate of approximately 50% every two years, though the new bridge was designed to minimize many of the vibration issues. A voluntary Web-based feedback survey of nearly 500 self-described bridge users showed strong preference for the LED lighting - positive comments outnumbered negative ones by about five-to-one.

Kinzey, Bruce R.; Myer, Michael

2009-08-31T23:59:59.000Z

329

Characterizing organometallic-vapor-phase-epitaxy-grown indium gallium nitride islands on gallium nitride for light emitting diode applications.  

E-Print Network (OSTI)

??The indium-gallium-nitride on gallium-nitride (InGaN/GaN) materials system is a promising candidate for providing a high intensity, high efficiency solution to the yet unsolved problem of… (more)

Anderson, Kathy Perkins Jenkins

2011-01-01T23:59:59.000Z

330

The effect of internal endpoint temperature on smoked sausage quality stored under light emitting diode and fluorescent lighting.  

E-Print Network (OSTI)

??Quality attributes of vacuum packaged, skinless smoked sausage made with a combination of pork, turkey, and beef, cooked to 64, 68, or 72°C internal endpoint… (more)

Gaschler, Alicia Jo

2012-01-01T23:59:59.000Z

331

DESIGN PROJECTS 2012-2013 1. Quantum Dot Light Emitting Diodes (Dr. K. Deshpande, Dow Chemical Company/Prof. M.  

E-Print Network (OSTI)

/acoustic insulation materials (Jenn Weber, Boeing): You are a Material and Process Engineer in a Design Team: a. Must perform acoustical, thermal, and fire barrier functions. b. Must not be heavy; New

Weaver, John H.

332

Design and optimization of a light-emitting diode projection micro-stereolithography three-dimensional manufacturing system  

E-Print Network (OSTI)

The rapid manufacture of complex three-dimensional micro-scale components has eluded researchers for decades. Several additive manufacturing options have been limited by either speed or the ability to fabricate true ...

Lee, Howon

333

Measurements of the Cerenkov light emitted by a TeO2 crystal  

E-Print Network (OSTI)

Bolometers have proven to be good instruments to search for rare processes because of their excellent energy resolution and their extremely low intrinsic background. In this kind of detectors, the capability of discriminating alpha particles from electrons represents an important aspect for the background reduction. One possibility for obtaining such a discrimination is provided by the detection of the Cerenkov light which, at the low energies of the natural radioactivity, is only emitted by electrons. In this paper, the results of the analysis of the light emitted by a TeO2 crystal at room temperature when transversed by a cosmic ray are reported. Light is promptly emitted after the particle crossing and a clear evidence of its directionality is also found. These results represent a strong indication that Cerenkov light is the main, if not even the only, component of the light signal in a TeO2 crystal. They open the possibility to make large improvements in the performance of experiments based on this kind of materials

F. Bellini; N. Casali; I. Dafinei; M. Marafini; S. Morganti; F. Orio; D. Pinci; M. Vignati; C. Voena

2012-09-27T23:59:59.000Z

334

Charge-transfer interfaces between metal and redox arylamine molecular films: As probed with anode interfacial engineering approach in single-layer organic diodes  

E-Print Network (OSTI)

We investigate the charge-transfer interfaces between metal and redox arylamine molecular films through studying the current-voltage characteristics of single-layer organic diodes with the aid of anode interfacial engineering method. The diode turn-on voltage is shown to be highly sensitive to the arylamine/metal charge-transfer interfaces and thus can serve as a probe in detecting such organic/metal interfaces. We show that the diode electrical performance could be tuned through engineering the arylamine/metal interfaces via controlling the factors of anode work function, arylamine substitute groups, and active layer surface morphology etc. The conduction mechanism of the diodes is shown to be injection limited, which could be well described with Richardson-Schottky thermonic emission model. Our work may provide some insight into the use of single-layer organic diode and interfacial engineering method to rapidly probe the organic/metal and even organic/organic charge-transfer interfaces.

J. C. Li; S. C. Blackstock; G. J. Szulczewski

2005-08-19T23:59:59.000Z

335

Ultrafast dynamics of excitons and charges in organic materials and semiconductor nanocrystals  

E-Print Network (OSTI)

and electronic properties that are of interest for applications in e.g. solar cells, photodiodes, light- emitting diodes, field-effect transistors and nanoscale molecular electronics. We studied the mechanism of charge

Schuster, Assaf

336

jap.aip.org A Selection of Top 2012 Articles  

E-Print Network (OSTI)

- equilibrium Green's function calculations. J. Appl. Phys. 111, 073111 (2012) organic light-emitting diodes and transfer processes in a multilayer organic light-emitting diode (OLED) are studied in order to realize

Lee, Jason R.

337

Design Principals for Energy-Aware User-Interfaces on OLED-based handhelds.  

E-Print Network (OSTI)

, display technologies, such as Organic Light Emitting Diodes (OLEDs) [3], are becoming available that allow., editor. Organic Light -Emitting Diode Displays: Annual D isplay Industry Report. Second edition, 2001

Ranganathan, Parthasarathy

338

Anomalous Temperature Dependence of Solvent-Enhanced Dye Diffusion In Polymer T. Graves-Abe, F. Pschenitzka, J.C. Sturm  

E-Print Network (OSTI)

to pattern full color polymer Organic Light-Emitting Diode (OLED) displays is to print dye from a pre. INTRODUCTION The desire to fabricate large-area Organic Light-Emitting Diode (OLED) displays has been a central

339

Solvent-enhanced Dye Diffusion in Polymer This-Films for OLED Application F. Pschenitzka, K. Long, and J. C. Sturm  

E-Print Network (OSTI)

in polymer films for organic light-emitting diode (OLED) application is introduced. After an initial dye coumarin 47, coumarin 6 and Nile red. INTRODUCTION Polymer based organic light-emitting diodes (OLEDs) have

340

Triplet Formation by Charge Recombination in Thin Film Blends of Perylene Red and Pyrene: Developing a Target Model for the  

E-Print Network (OSTI)

, photovoltaic cells, field effect transistors, and light-emitting diodes. These activities are aimed at product in xerography,9 organic field-effect transistors (OFETs),3,10 organic light-emitting diodes (OLEDs),11

van Stokkum, Ivo

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Hyperfine-Field-Mediated Spin Beating in Electrostatically Bound Charge Carrier Pairs D. R. McCamey, K. J. van Schooten, W. J. Baker, S.-Y. Lee, S.-Y. Paik, J. M. Lupton,* and C. Boehme  

E-Print Network (OSTI)

of the current through an organic light emitting diode under coherent spin-resonant excitation. At weak driving processes responsible for light emission in organic light-emitting diodes (OLEDs), such local variations

McCamey, Dane

342

Temperature dependence of electron mobility, electroluminescence and photoluminescence This article has been downloaded from IOPscience. Please scroll down to see the full text article.  

E-Print Network (OSTI)

mobility were investigated over temperature from 60 to 300 K in small-molecule organic light emitting diode technological advances have been achieved in this decade on organic light emitting diodes (OLEDs) driven

Klotzkin, David

343

Postdoctoral Research Associate Functional Hybrid Nanostructures Group  

E-Print Network (OSTI)

in Organic Phosphorescence-Based Light Emitting Diodes," American Physical Society 2008 Spring Meeting, New photovoltaics (OPVs), organic field effect transistors (OFETs), organic light emitting diodes (OLEDs). 2 of Single Walled Carbon Nanotubes on the Electroluminescent Performance of Organic Light Emitting Diode

Pennycook, Steve

344

www.dalinnovation.com Industry LIaIsonand Innovation  

E-Print Network (OSTI)

efficiencies and lifetimes of Organic Light Emitting Diode (OLED) displays. OLEDs are widely touted as the next

Beaumont, Christopher

345

Position Statement Commercialising University Intellectual Property  

E-Print Network (OSTI)

developer of polymer organic light emitting diode-based micro-displays and was later warded an entry

Edinburgh, University of

346

Appl Phys A (2011) 105:713722 DOI 10.1007/s00339-011-6583-x  

E-Print Network (OSTI)

light-emitting diodes (OLEDs) [9], organic thin-film transistors [10], ceramics [11], 3-D interconnects

347

THIRTY FIFTH SERIES Fall 2011 SEP.08 Chris Bross, DriveSavers Data Recovery, Inc., Novato, CA  

E-Print Network (OSTI)

-matrix organic light-emitting diode (AMOLED) displays are brighter, more colorful and consume less energy than

Ravikumar, B.

348

Wall Street Journal / MIT Sloan How to Back the Right Technology  

E-Print Network (OSTI)

-ray tube, or CRT; liquid-crystal display, or LCD; organic light- emitting diode, or OLED; and plasma. Each

Southern California, University of

349

IOP PUBLISHING JOURNAL OF OPTICS J. Opt. 12 (2010) 124014 (5pp) doi:10.1088/2040-8978/12/12/124014  

E-Print Network (OSTI)

of materials, such as organic light emitting diode pixels [11], living cells [12], nanocrystal quantum dots [13

350

Available Technologies: Novel Structured LED and OLED Devices  

APPLICATIONS OF TECHNOLOGY: Light Emitting Diode (LED) and Organic LED devices for. Energy-efficient area lighting ; Information displays

351

Novel Structured LED and OLED Devices - Energy Innovation Portal  

Applications and Industries Light Emitting Diode (LED) and Organic LED devices for. Energy-efficient area lighting; Information displays; Technology ...

352

University of Tennessee, USA Georgia State University, USA Johns Hopkins Medicine Institute, USA University of Virginia, USA  

E-Print Network (OSTI)

by using a programmed organic light emitting diode array as a spatial-scanning light source and a single

Zare, Richard N.

353

Finteraction Finger Interaction with Mobile Phone  

E-Print Network (OSTI)

, sensors, and organic light emitting diode display [8]. Gummi[9] is a prototype based on this concept

Reiterer, Harald

354

Nominated for the TU/e Doctoral Project Award 2010 dr.ir. R.W. Smink  

E-Print Network (OSTI)

- Intensity Discharge lamps. Organic light-emitting diodes (OLEDs) OLEDs are ultrathin solid-state light of disorder on the charge transport and recombination in organic light-emitting diodes Applied Physics Figure 1: A flexible white organic light-emitting diode. Figure 2: Schematic structure of an OLED

Franssen, Michael

355

0018-9162/06/$20.00 2006 IEEE March 2006 31Published by the IEEE Computer Society C O V E R F E A T U R E  

E-Print Network (OSTI)

- sive display technologies such as organic light-emitting diode (OLED) displays3 that allow lower power-display-based proto- type and a conventional LCD-based system. March 2006 33 Organic Light-Emitting Diode Displays technologies that require making energy tradeoffs for the entire screen. Organic light-emitting diode displays

Ranganathan, Parthasarathy

356

Energy-Adaptive Display System Designs for Future Mobile Environments  

E-Print Network (OSTI)

displays to minimize power. However, new techno- logies, such as Organic Light Emitting Diodes (OLEDs for the entire screen. Organic Light Emitting Diode (OLED) displays [3] are a good example of this class" AMOLED (Active Matrix Organic Light Emitting Diode) display. (Section 4 discusses other hardware ap

Ranganathan, Parthasarathy

357

National Initiatives and Programs in Solid-State Lighting  

NLE Websites -- All DOE Office Websites (Extended Search)

these results is called "The Promise of Solid-State Lighting for General Illumination: Light Emitting Diodes and Organic Light Emitting Diodes" (pdf - 329kb). The full SSL-LED...

358

Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer P. Roca i Cabarrocas, R. Brenot, P. Bulkin, R. Vanderhaghen, B. Drvillon, and I. French  

E-Print Network (OSTI)

light-emitting diodes. © 1999 American Institute of Physics. S0021-8979 99 05324-4 I. INTRODUCTION, TFTs for active matrix addressing of organic and polymer light- emitting diodes LEDs must also have

Recanati, Catherine

359

Energy Department Announces New Investments to Drive Cost-Competitive...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

of light-emitting diodes (LEDs) and organic light-emitting diodes (OLEDs). Today's LED lighting is six or seven times more efficient than conventional lighting and can last...

360

Nanocrystalline Silicon Thin Film Transistors on Optically Clear Polymer Foil Substrates Alex Kattamis, I-Chun Cheng, Ke Long, James C. Sturm, Sigurd Wagner  

E-Print Network (OSTI)

with bottom-emitting organic light emitting diodes, such devices will allow for a 10x reduction in pixel TFT light emitting diode (AMOLED) displays. There is growing interest in AMOLED displays because active

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Satyendra Kumar Coordinator, SCDT  

E-Print Network (OSTI)

& Samtel Development of Prototype Full Color Organic Light Emitting Diodes (OLED) Display 04 2004-200724.00DSTUV and Near-UV Light Emitting Diodes using Polysilanes 03 2004-200737.58MCITMolecular Electronics & Samtel Research and Development in the Technology of Active Matrix Organic Light Emitting Diode Displays

Srivastava, Kumar Vaibhav

362

JOURNAL OF DISPLAY TECHNOLOGY, VOL. 2, NO. 4, DECEMBER 2006 341 Measurement of Electron Mobility in Alq3 From  

E-Print Network (OSTI)

in Alq3 From Optical Modulation Measurements in Multilayer Organic Light-Emitting Diodes Haichuan Mu. J. Heeger, "Nanosecond tran- sient electroluminescence from polymer light-emitting diodes," Appl. Bouchriha, J. Roussel, and J.-L. Fave, "Transient re- sponse of a bilayer organic light emitting diode

Klotzkin, David

363

INDIAN INSTITUTE OF TECHNOLOGY KANPUR Samtel Centre for Display Technologies  

E-Print Network (OSTI)

of participants in the SCDT activities 1 OLED ­ Organic Light Emitting Diodes #12;- 6 - stands at 85. As we expand of Active Matrix Organic Light Emitting Diode Displays DST & Samtel 300.00 2002-2005 02 Molecular.58 2004-2007 03 UV and Near-UV Light Emitting Diodes using Polysilanes DST 24.00 2004-2007 04 Development

Srivastava, Kumar Vaibhav

364

Lattice mismatched epitaxy of heterostructures for non-nitride green light emitting devices  

E-Print Network (OSTI)

In this project, we implement modern metal organic chemical vapor deposition (MOCVD) technology to fabricate monolithic platforms which integrate traditionally incompatible materials with the ultimate goal of achieving ...

Mori, Michael James

2008-01-01T23:59:59.000Z

365

Organic Membranes for Energy Conversion and "Green" Manufacturing  

NLE Websites -- All DOE Office Websites (Extended Search)

Organic Membranes for Energy Conversion and "Green" Manufacturing Organic Membranes for Energy Conversion and "Green" Manufacturing Speaker(s): John Kerr Date: January 17, 2002 - 12:00pm Location: Bldg. 90 Seminar Host/Point of Contact: Cynthia Tast Organic materials are central to the operation of energy conversion devices such as lithium batteries and fuel cells. Use of organic polymer membranes has been well established in the chlor-alkali and separations industries for several decades now. New applications such as light emitting diodes for displays and area lighting, organic photovoltaics for solar conversion and electrochromics illustrate the growing importance of organic materials in energetic applications. Understanding the operation of these materials, their limitations and advantages is of major importance to the successful

366

phys. stat. sol. (c) 0, No. 6, 17951815 (2003) / DOI 10.1002/pssc.200303125 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim  

E-Print Network (OSTI)

: Indium Tin Oxide LCV: Laboratoire des Composants pour la Visualisation LED : Light Emitting Diode tel : Acide Oléique oDCB : Orthodichlorobenzène OLA: Oleylamine OLED: Organic Light Emitting Diode OPD Light Emitting Diode poly-TPD: poly- N,N'-diphenyl-N, N'-bis(3-methylphenyl) 1, 1'-biphenyl-4, 4

Nabben, Reinhard

367

JOURNAL OF DISPLAY TECHNOLOGY, VOL. 2, NO. 2, JUNE 2006 143 Maximizing Alq3 OLED Internal and External  

E-Print Network (OSTI)

bright, efficient Alq3-based [tris-(8-hydroxyquinoline) aluminum] organic light-emitting diode (OLED conversion material, lensed device, luminous intensity, organic light emitting diodes (OLED), outcoupling efficiency, quantum efficiency. I. INTRODUCTION ORGANIC light-emitting devices (OLEDs), using Alq (tris(8

Cincinnati, University of

368

ECE Department Guest Seminar Speaker: Xiaoshan Xu, Ph.D.  

E-Print Network (OSTI)

. Organic semiconductors hold great potential in energy related applications such as organic light emitting diode and organic photovoltaics. These organic electronics are highly attractive because of their light

369

Generation of incoherent light from a laser diode based on the injection of an emission from a superluminescent diode  

E-Print Network (OSTI)

In this study, incoherent light with a spectral linewidth of 7 nm and 140 mW of power was generated from a laser diode into which incoherent light emitted from a superluminescent diode was injected with 2.7 mW of power. The spectral linewidth of the light from the laser diode was broadened to 12 nm when the diode's output power was reduced to 15 mW. In the process of transformation from single-mode laser light to incoherent light with a broad spectrum by increasing injection-light power, multimode laser oscillation and a noisy spectrum were found in the light from the laser diode. This optical system can be used not only for amplification of incoherent light but also as a coherence-convertible light source.

Takamizawa, Akifumi; Ikegami, Takeshi

2013-01-01T23:59:59.000Z

370

Flexible display enabling technology Sigurd Wagnera*  

E-Print Network (OSTI)

or silicon transistors, and directly printed RGB organic light emitting diodes are issues central temperature substrates. Organic light emitting diodes have been made by inkjet printing in an approach are natural candidates for low-temperature electronics, including transistor electronics and light emitting

371

The synthesis of inorganic semiconductor nanocrystalline materials for the purpose of creating hybrid organic/inorganic light-emitting devices  

E-Print Network (OSTI)

Colloidal semiconductor nanocrystals (NCs) or quantum dots (QDs) can be synthesized to efficiently emit light from the ultraviolet, across the entire visible spectrum, and into the near infrared. This is now possible due ...

Steckel, Jonathan S. (Jonathan Stephen)

2006-01-01T23:59:59.000Z

372

Electroluminescence in ion gel gated organic polymer semiconductor transistors  

E-Print Network (OSTI)

emission in ion gel gated, thin film organic semiconductor tran- sistors and investigates the light emission mechanism behind these devices. We report that ion gel gated organic polymer semiconductor transistors emit light when the drain source volt- age... the organic light emitting devices become mainstream, there are several challenges that need to be resolved and current research focus is to ad- dress those challenges. One particular challenge is relatively high operating volt- ages of light emitting organic...

Bhat, Shrivalli

2011-07-12T23:59:59.000Z

373

Dual function conducting polymer diodes  

DOE Patents (OSTI)

Dual function diodes based on conjugated organic polymer active layers are disclosed. When positively biased the diodes function as light emitters. When negatively biased they are highly efficient photodiodes. Methods of preparation and use of these diodes in displays and input/output devices are also disclosed.

Heeger, Alan J. (Santa Barbara, CA); Yu, Gang (Goleta, CA)

1996-01-01T23:59:59.000Z

374

Light-Emitting Tag Testing in Conjunction with Testing of the Minimum Gap Runner Turbine Design at Bonneville Dam Powerhouse 1  

DOE Green Energy (OSTI)

This report describes a pilot study conducted by Tom Carlson of PNNL and Mark Weiland of MEVATEC Corp to test the feasibility of using light-emitting tags to visually track objects passing through the turbine environment of a hydroelectric dam. Light sticks were released at the blade tip, mid-blade, and hub in the MGR turbine and a Kaplan turbine at Bonneville Dam and videotaped passing thru the dam to determine visibility and object trajectories.

Carlson, Thomas J

2001-01-30T23:59:59.000Z

375

2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim4018 www.advmat.de  

E-Print Network (OSTI)

, and ease of pro- cessing.[1­3] While a number of organic solar cells and organic light emitting diodes have

Heaton, Thomas H.

376

Demonstration Assessment of Light-Emitting Diode (LED) Parking Lot Lighting at T.J.Maxx in Manchester, NH Phase I  

SciTech Connect

A report describing the process and results of replacing existing parking lot lighting, looking at a LED option with occupancy sensors, and conventional alternates. Criteria include payback, light levels, occupant satisfaction. This report is Phase I of II. Phase I deals with initial installation.

Myer, Michael; Goettel, Russell T.

2010-06-29T23:59:59.000Z

377

Strong blue and white photoluminescence emission of BaZrO{sub 3} undoped and lanthanide doped phosphor for light emitting diodes application  

SciTech Connect

In this paper, we report the obtained strong broadband blue photoluminescence (PL) emission centered at 427 nm for undoped BaZrO{sub 3} observed after 266 nm excitation of submicron crystals prepared by hydrothermal/calcinations method. This emission is enhanced with the introduction of Tm{sup 3+} ions and is stronger than the characteristic PL blue emission of such lanthanide. The proposed mechanism of relaxation for host lattice emission is based on the presence of oxygen vacancies produced during the synthesis process and the charge compensation due to the difference in the electron valence between dopant and substituted ion in the host. Brilliant white light emission with a color coordinate of (x=0.29, y=0.32) was observed by combining the blue PL emission from the host with the green and red PL emission from Tb{sup 3+} and Eu{sup 3+} ions, respectively. The color coordinate can be tuned by changing the ratio between blue, green and red band by changing the concentration of lanthanides. - Graphical abstract: Strong blue emission from undoped BaZrO{sub 3} phosphor and white light emission by doping with Tb{sup 3+} (green) and Eu{sup 3+} (red) after 266 nm excitation. Highlights: Black-Right-Pointing-Pointer Blue emission from BaZrO{sub 3} phosphor. Black-Right-Pointing-Pointer Blue emission enhanced with Tm{sup 3+}. Black-Right-Pointing-Pointer White light from BaZrO{sup 3+} phosphor.

Romero, V.H. [Centro de Investigaciones en Optica, A. P. 1-948, Leon Gto., 37160 (Mexico)] [Centro de Investigaciones en Optica, A. P. 1-948, Leon Gto., 37160 (Mexico); De la Rosa, E., E-mail: elder@cio.mx [Centro de Investigaciones en Optica, A. P. 1-948, Leon Gto., 37160 (Mexico); Salas, P. [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, A.P. 1-1010, Queretaro, Qro. 76000 (Mexico)] [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, A.P. 1-1010, Queretaro, Qro. 76000 (Mexico); Velazquez-Salazar, J.J. [Department of Physics and Astronomy, The University of Texas at San Antonio One UTSA Circle, San Antonio TX 78249 (United States)] [Department of Physics and Astronomy, The University of Texas at San Antonio One UTSA Circle, San Antonio TX 78249 (United States)

2012-12-15T23:59:59.000Z

378

UNDERWRITERS' LABORATORIES, INC.  

Science Conference Proceedings (OSTI)

... Key Words - Arrhenius Law, Light Emitting Diode, Light Degradation Rate, Photoelectric ... Light Emitting DiOde (LED) Source Lamps (2) ...

2009-05-05T23:59:59.000Z

379

Page not found | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Solution Processable Transparent Conductive Hole Injection Electrode for Organic Light Emitting Diode (OLED) Solid State Lighting CX(s) Applied: B3.6 Date: 03022010...

380

JOM: The Member Journal of TMS - JOM Monthly  

Science Conference Proceedings (OSTI)

May 12, 2009... transparent conductive film designed to replace indium tin oxide (ITO) films used in touch panels, organic light-emitting diode (OLED) panels, ...

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Electrodynamic and Thermal Interaction of Nanoparticles in ...  

Science Conference Proceedings (OSTI)

... of Nanoparticles in Hyperthermia Cancer Therapy and Solar Energy Systems. ... Case Studies in Organic Light Emitting Diodes and Plasma Display Panels.

382

NREL: Energy Sciences - Chemical and Materials Science  

NLE Websites -- All DOE Office Websites (Extended Search)

oxides, combinatorial methods, and atmospheric processing. The primary work focuses on photovoltaic cell research, but also includes application to organic light-emitting diodes...

383

DOI: 10.1126/science.1202584 , 947 (2011);332Science  

E-Print Network (OSTI)

,000 cd/m2 , which is better than state-of-the-art p-i-n phosphorescent organic light-emitting diodes

384

Page not found | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Processable Transparent Conductive Hole Injection Electrode for Organic Light Emitting Diode (OLED) Solid State Lighting CX(s) Applied: B3.6 Date: 03022010 Location(s):...

385

Page not found | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Categorical Exclusion Determination Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Allison Park) CX(s) Applied: A2, A9 Date: 03192010...

386

Page not found | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Processable Transparent Conductive Hole Injection Electrode for Organic Light Emitting Diode (OLED) Solid State Lighting (Pennsylvania) CX(s) Applied: B3.6 Date: 03022010...

387

EERE Small Business Innovation Research | Department of Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

Brands) is using an SBIR Phase III grant to adapt its phosphorescent organic light-emitting diode (PHOLED) technology for high-end commercial and institutional building...

388

Lighting Group: Sources and Ballasts  

NLE Websites -- All DOE Office Websites (Extended Search)

incorporating LEDs into tomorrows task lights, to reducing light entrapment within the LED, to fundamental research into how Organic Lighting Emitting Diodes operate. LED and...

389

A Review of OLED Research at Naval Research Laboratory  

NLE Websites -- All DOE Office Websites (Extended Search)

Division at Naval Research Laboratory. Her research is focused on organic light emitting diode (OLED) material and devices. She will discuss the research activities at Naval...

390

Company Name Company Name Address Place Zip Sector Product Website  

Open Energy Info (EERE)

manufacturing and marketing of display products typically OLED Organic Light Emitting Diode Display Vista International Inc Vista International Inc Englewood Colorado...

391

Categorical Exclusion Determinations: National Energy Technology...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Categorical Exclusion Determination Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07302013 Location(s):...

392

Opals, Photonic Band Gap Materials, Pleochroic Refraction, and ...  

Science Conference Proceedings (OSTI)

Improved Performance of a Fluorescent Blue Organic Light Emitting Diode with Hole Blocking Materials as Dopants for Transport Layers · Luminescence of the ...

393

CX-001308: Categorical Exclusion Determination | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Categorical Exclusion Determination Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Allison Park) CX(s) Applied: A2, A9 Date: 03192010...

394

CX-001153: Categorical Exclusion Determination | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

systematically integrate high-performance phosphorescent small-molecule organic light-emitting diode materials device architectures. DOCUMENT(S) AVAILABLE FOR DOWNLOAD...

395

Center for Nanophase Materials Sciences (CNMS) - CNMS Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Oak Ridge National Laboratory, Oak Ridge, TN 37830 Achievement Organic light-emitting diode (OLED) layers have been integrated into the carbon nanotube-vertical field...

396

CX-010822: Categorical Exclusion Determination | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Categorical Exclusion Determination Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07302013 Location(s):...

397

Structure of Pentacene Monolayers on Amorphous Silicon Oxide...  

NLE Websites -- All DOE Office Websites (Extended Search)

and potential applications in low-cost electronics such as organic light emitting diode (OLED) displays, thin film transistors and related applications (e.g. TFT...

398

CX-001152: Categorical Exclusion Determination | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

systematically integrate high-performance phosphorescent small-molecule organic light-emitting diode materials device architectures. DOCUMENT(S) AVAILABLE FOR DOWNLOAD...

399

CX-010824: Categorical Exclusion Determination | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Categorical Exclusion Determination Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07302013 Location(s):...

400

CX-001035: Categorical Exclusion Determination | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Processable Transparent Conductive Hole Injection Electrode for Organic Light Emitting Diode (OLED) Solid State Lighting CX(s) Applied: B3.6 Date: 03022010 Location(s):...

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

CNST Group Seminars - 2011  

Science Conference Proceedings (OSTI)

... Electrical spin injection across the organic/inorganic interface is successfully detected in the hybrid spin light emitting diode (spin LED) device [2 ...

2013-10-25T23:59:59.000Z

402

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM OPTO SEMICONDUCTORS...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

will develop, fabricate, and fully characterize a 12-inch square OLED (Organic Light Emitting Diode) white light prototype. The prototype will be based on use of multiple discrete...

403

The Flexible Display Center and Universal Display Corporation Produce Flexible, Full-Color AMOLED Prototype Displays  

E-Print Network (OSTI)

successfully fabricated the first full-color, flexible active matrix organic light emitting diode (AMOLED) display prototypes using the Center's bond/de-bond manufacturing

Rhoads, James

404

Categorical Exclusion Determinations: Office of Energy Efficiency...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Processable Transparent Conductive Hole Injection Electrode for Organic Light Emitting Diode (OLED) Solid State Lighting (Pennsylvania) CX(s) Applied: B3.6 Date: 03022010...

405

Organic optoelectronic devices based on platinum(ii) complexes and polymers  

Science Conference Proceedings (OSTI)

In this study, the syntheses and characterizations of platinum(II) complexes and polymers for applications in organic optoelectronic devices, such as light-emitting devices (LEDs) and photovoltaic (PV) cells, were explored in detail. The photoluminescent ...

Hai-Feng Xiang

2005-01-01T23:59:59.000Z

406

Recent advances in solid-state organic lasers  

E-Print Network (OSTI)

Organic solid-state lasers are reviewed, with a special emphasis on works published during the last decade. Referring originally to dyes in solid-state polymeric matrices, organic lasers also include the rich family of organic semiconductors, paced by the rapid development of organic light emitting diodes. Organic lasers are broadly tunable coherent sources are potentially compact, convenient and manufactured at low-costs. In this review, we describe the basic photophysics of the materials used as gain media in organic lasers with a specific look at the distinctive feature of dyes and semiconductors. We also outline the laser architectures used in state-of-the-art organic lasers and the performances of these devices with regard to output power, lifetime, and beam quality. A survey of the recent trends in the field is given, highlighting the latest developments in terms of wavelength coverage, wavelength agility, efficiency and compactness, or towards integrated low-cost sources, with a special focus on the gr...

Chenais, Sébastien; 10.1002/pi.3173

2011-01-01T23:59:59.000Z

407

Geometry dependent current-voltage characteristics of ZnO nanostructures: A combined nonequilibrium Green's function and density functional  

E-Print Network (OSTI)

Intramolecular excimer emission as a blue light source in fluorescent organic light emitting diodes Light Emitting Diode (OLED), intermolecular p­p interactions should be usually suppressed to avoid any Emitting Diodes (SMOLEDs) is almost absent from the literature. In this work, three aryl-substituted Di

Melnik, Roderick

408

Cavity-enhanced radiative emission rate in a single-photon-emitting diode operating at 0.5 GHz  

E-Print Network (OSTI)

We report the observation of a Purcell enhancement in the electroluminescence decay rate of a single quantum dot, embedded in a microcavity light-emitting-diode structure. Lateral confinement of the optical mode was achieved using an annulus of low-refractive-index aluminium oxide, formed by wet oxidation. The same layer acts as a current aperture, reducing the active area of the device without impeding the electrical properties of the p-i-n diode. This allowed single photon electroluminescence to be demonstrated at repetition rates up to 0.5 GHz.

David J. P. Ellis; Anthony J. Bennett; Samuel J. Dewhurst; Christine A. Nicoll; David A. Ritchie; Andrew J. Shields

2008-04-04T23:59:59.000Z

409

Development of White-Light Emitting Active Layers in Nitride Based Heterostructures for Phosphorless Solid State Lighting  

SciTech Connect

This report provides a summary of research activities carried out at the University of California, San Diego and Central Research of OSRAM SYLVANIA in Beverly, MA partially supported by a research contract from US Department of Energy, DE-FC26-04NT422274. The main objective of this project was to develop III-V nitrides activated by rare earth ions, RE{sup 3+}, which could eliminate the need for phosphors in nitride-based solid state light sources. The main idea was to convert electron-hole pairs injected into the active layer in a LED die to white light directly through transitions within the energy levels of the 4f{sup n}-manifold of RE{sup 3+}. We focused on the following materials: Eu{sup 3+}(red), Tb{sup 3+}(green), Er{sup 3+}(green), Dy{sup 3+}(yellow) and Tm{sup 3+}(blue) in AlN, GaN and alloys of AlN and GaN. Our strategy was to explore candidate materials in powder form first, and then study their behavior in thin films. Thin films of these materials were to be deposited on sapphire substrates using pulsed laser deposition (PLD) and metal organic vapor phase epitaxy (MOVPE). The photo- and cathode-luminescence measurements of these materials were used to investigate their suitability for white light generation. The project proceeded along this route with minor modifications needed to produce better materials and to expedite our progress towards the final goal. The project made the following accomplishments: (1) red emission from Eu{sup 3+}, green from Tb{sup 3+}, yellow from Dy{sup 3+} and blue from Tm{sup 3+} in AlN powders; (2) red emission from Eu{sup 3+} and green emission from Tb{sup 3+} in GaN powder; (3) red emission from Eu{sup 3+} in alloys of GaN and AlN; (4) green emission from Tb{sup 3+} in GaN thin films by PLD; (5) red emission from Eu{sup 3+} and Tb{sup 3+} in GaN thin films deposited by MOVPE; (6) energy transfer from host to RE{sup 3+}; (7) energy transfer from Tb{sup 3+} to Eu{sup 3+} in AlN powders; (8) emission from AlN powder samples codoped with (Eu{sup 3+} ,Tb{sup 3+} ) and (Dy{sup 3+}, Tm{sup 3+}); and (9) white emission from AlN codoped with Dy{sup 3+} and Tm{sup 3+}. We also extensively studied the stabilities of rare earth ions in GaN, and the nature of oxygen defects in GaN and its impact on the optical properties of the host material, using first principles method. Results from these theoretical calculations together with fluorescence measurements from the materials essentially proved the underlying concepts for generating white light using RE{sup 3+}-activated nitrides. For this project, we successfully built a horizontal MOVPE reactor and used it to deposit thin films of undoped and doped nitrides of GaN and InGaN, which is a very significant achievement. Since this reactor was designed and built by in-house experts, it could be easily modified and reassembled for specific research purposes. During this study, it was successfully modified for homogeneous distribution of rare earth ions in a deposited film. It will be an ideal tool for future research involving novel thin film material concepts. We examined carefully the suitability of various metal organic precursors for incorporating RE{sup 3+}. In order to avoid oxygen contamination, several oxygen-free RE{sup 3+} precursors were identified. Both oxygen-free and oxygen- containing metal organic precursors were used for certain rare earth ions (Eu{sup 3+}, Tb{sup 3+} and Er{sup 3+}). However, the suitability of any particular type of precursor for MOVPE deposition was not established during this study, and further study is needed. More intensive research in the future is needed to improve the film quality, and eliminate the separation of rare earth oxide phases during the deposition of thin films by MOVPE. The literature in the area of the chemistry of rare earth ions in nitrides is almost nonexistent, in spite of the significant research on luminescence of RE{sup 3+} in nitrides. Consequently, MOVPE as a method of deposition of RE{sup 3+}-activated nitrides is relatively unexplored. In the following sections of this report, the ou

Jan Talbot; Kailash Mishra

2007-12-31T23:59:59.000Z

410

HIGHLY STABLE AMORPHOUS SILICON THIN FILM TRANSISTORS AND INTEGRATION  

E-Print Network (OSTI)

ORGANIC LIGHT EMITTING DIODE DISPLAYS ON CLEAR PLASTIC Bahman Hekmatshoar A DISSERTATION PRESENTED insensitive to the TFT threshold voltage rise which is well-known in a-Si:H devices. Organic light-emitting diodes (OLEDs) are a future technology choice for flexible displays with several advantages over liquid

411

Blue light emitting thiogallate phosphor  

DOE Patents (OSTI)

A crystalline blue emitting thiogallate phosphor of the formula RGa.sub.2 S.sub.4 :Ce.sub.x where R is selected from the group consisting of calcium, strontium, barium and zinc, and x is from about 1 to 10 atomic percent, the phosphor characterized as having a crystalline microstructure on the size order of from about 100 .ANG. to about 10,000 .ANG. is provided together with a process of preparing a crystalline blue emitting thiogallate phosphor by depositing on a substrate by CVD and resultant thin film electroluminescent devices including a layer of such deposited phosphor on an ordinary glass substrate.

Dye, Robert C. (Los Alamos, NM); Smith, David C. (Los Alamos, NM); King, Christopher N. (Portland, OR); Tuenge, Richard T. (Hillsboro, OR)

1998-01-01T23:59:59.000Z

412

Browse wiki | Open Energy Information  

Open Energy Info (EERE)

lighting units. Note: MV Mercury Vapor, HPS High Pressure Sodium, IND Induction, LED Light Emitting Diode.D Induction, LED Light Emitting Diode. OpenEIUtilityRate...

413

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network (OSTI)

and have been used extensively in light emitting diodes LEDs and laser diodes at wavelengths through

Heaton, Thomas H.

414

Synthesis and luminescence properties of rare earth activated phosphors for near UV-emitting LEDs for efficacious generation of white light  

E-Print Network (OSTI)

Sun, Y. Luo, S. Lu. ?White light emitting diode by using a-silicates for near-UV light emitting diode applications,? J.Park, S.Y. Choi. ?White light-emitting diodes of GaN-based

Han, Jinkyu

2013-01-01T23:59:59.000Z

415

Edmund G. Brown Jr. LIGHTING CALIFORNIA'S FUTURE  

E-Print Network (OSTI)

. Keywords: Solidstate lighting, LED, light emitting diode, indirect downlight, energy efficiency #12;viii, advanced light emitting diode downlighting system. Performance objectives included compliance with ENERGY an advanced light emitting diode downlight system, retooling the traditional downlight and optimizing

416

Using the genetic algorithm to design gallium indium nitride/gallium nitride light-emitting diodes with reduced efficiency droop and reduced spectral instability with respect to injection current  

Science Conference Proceedings (OSTI)

Today we are witnessing a fast growing trend that is redefining the concept of lighting. Numerous governments from all over the world have passed legislation to phase out incandescent light bulbs, with the objective of encouraging energy-efficient ...

Roya Mirhosseini / Partha S. Dutta

2010-01-01T23:59:59.000Z

417

EE101 Labs and ECEbot Assembly/Testing Instructions Montana State University  

E-Print Network (OSTI)

in a simple diode circuit, (4) Be able to wire a typical light emitting diode (LED) display on a prototype will be using a special type of diode: the light-emitting diode, or LED. LEDs are diode devices that produce: long wire cathode: short wire Figure 3: Light-Emitting Diode The schematic symbol for a light-emitting

Dyer, Bill

418

Browse wiki | Open Energy Information  

Open Energy Info (EERE)

will furnish, install, and maintain lighting units. Note: HPS High Pressure Sodium, LED Light Emitting Diode.essure Sodium, LED Light Emitting Diode. OpenEIUtilityRate...

419

Proceedings of the 37th ASME Mechanisms & Robotics Conference August 4-7 2013, Portland, Oregon, USA  

E-Print Network (OSTI)

objects that contain electronic functions. Conductivity, output devices (such as Light Emitting Diodes functions such as light and sound performance. In addition, conductivity, LED (Light Emitting Diodes) output

Demaine, Erik

420

PCB Origami: A Material-Based Design Approach to Computer-Aided Foldable Electronic Devices  

E-Print Network (OSTI)

that contain electronic functions. Conductivity, output devices (such as Light Emitting Diodes functions such as light and sound performance. In addition, conductivity, LED (Light Emitting Diodes) output

Demaine, Erik

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Efficiency Improvement Opportunities for Personal Computer Monitors: Implications for Market Transformation Programs  

E-Print Network (OSTI)

LCD liquid crystal display LED light emitting diode MEPSto light emitting diode (LED) backlit LCD monitors (likelyoptions is different for LED backlit LCD monitors compared

Park, Won Young

2013-01-01T23:59:59.000Z

422

Document  

NLE Websites -- All DOE Office Websites (Extended Search)

Initia- tive Consortium established under section 5(b). (2) INORGANIC WHITE LIGHT EMITTING DIODE.-The term ''inorganic white light emitting diode'' means a semiconducting...

423

THE ECONOMIC BENEFITS OF NIST'S ROLE IN THE ...  

Science Conference Proceedings (OSTI)

... 2. A light emitting diode (LED) is a pn junction semiconductor that emits optical radiation, mainly in the visible range. ... Light Emitting Diode (LED) ...

2012-12-06T23:59:59.000Z

424

S:\\TERRY\\105-1 - 7\\105-5\\105-5 final.wpd  

Science Conference Proceedings (OSTI)

... LED. Light emitting diode. Refers ... displays: 4.2.8.1 LED - Light emitting diode. This type of display is best used in low light conditions. ...

2010-12-09T23:59:59.000Z

425

STATEMENT OF CONSIDERATIONS PETITION FOR ADVANCE WAIVER OF PATENT...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

from its participation under the above referenced cooperative agreement entitled "Quantum Dot Light Emitting Diodes." The objective of the Quantum Dot Light Emitting Diodes...

426

Carnegie Mellon University Energy Efficiency in the U.S. Residential Sector  

E-Print Network (OSTI)

]. ....................................................277& Figure 63 - UV-phosphor based white light emitting diode...........................................283& Figure 64 ­ UV-phosphor based white light emitting diode

427

Kinetic Control of Recombination in Organic Photovoltaics: The Role of Spin  

E-Print Network (OSTI)

In photovoltaic diodes recombination of photogenerated electrons and holes is a major loss process. Biological light harvesting complexes (LHCs) prevent recombination via the use of cascade structures, which lead to spatial separation of charge-carriers1. In contrast, the nanoscale morphology and high charge densities in organic photovoltaic cells (OPVs) give a high rate of electron-hole encounters, which should result in the formation of spin triplet excitons, as in organic light emitting diodes (OLEDs)2. OPVs would have poor quantum efficiencies if every encounter lead to recombination, but state-of-the-art OPVs demonstrate near-unity quantum efficiency3. Here we show that this suppression of recombination can be engineered through the interplay between spin, energetics and delocalisation of electronic excitations in organic semiconductors. We use time-resolved spectroscopy to study a series of model, high efficiency polymer-fullerene systems in which the lowest lying molecular triplet exciton (T1) (on the polymer) lies below the intermolecular charge transfer state (CT). We observe the formation of T1 states following bimolecular recombination, indicating that encounters of spin-uncorrelated electrons and holes generate CT states with both spin singlet (1CT) and spin triplet (3CT) characters. We show that triplet exciton formation can be the major loss mechanism in OPVs. However, we find that even when energetically favoured, the relaxation of 3CT to T1 can be strongly suppressed, via control over wavefunction delocalisation, allowing for the dissociation of 3CT back to free changes, thereby reducing recombination and enhancing device performance. Our results point towards new design rules for artificial photo-conversion systems, enabling the suppression of electron-hole recombination, and also for OLEDs, avoiding the formation of triplet states and enhancing fluorescence efficiency.

Akshay Rao; Philip C. Y. Chow; Simon Gélinas; Cody W. Schlenker; David S. Ginger; Chang-Zhi Li; Hin-Lap Yip; Alex K-Y. Jen; Richard H. Friend

2013-03-12T23:59:59.000Z

428

Organic Electronics: Organic thin-film magnetometers  

SciTech Connect

Magnetometry usually requires large probes and bulky instrumentation. Organic diodes have now been used in small probes that can measure moderate magnetic fields with 10 ppm precision.

Shinar, Joseph

2012-07-24T23:59:59.000Z

429

V6, Resonant Periodic Gain InAs Quantum Dot VECSEL  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

430

Page not found | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Categorical Exclusion Determination Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Monroeville) CX(s) Applied: B3.6 Date: 03192010 Location(s):...

431

Achieving Extreme Efficiency: How to get the job done when energy is extremely expensive and scarce  

E-Print Network (OSTI)

include light-emitting diode (LED) bulbs, organic LED (OLED)60W incandescent bulb, is a LED bulb that is now GeneralBy comparison, basic LED bulbs generally have efficiencies

Brown, Rich

2013-01-01T23:59:59.000Z

432

EE9, MBE Grown InGaAsSbN/GaSb Single Quantum Wells for Mid ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

433

G3, Improvement of InGaZnO 4 TFT Device Performance on Glass ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

434

J1, MBE Growth of Metamorphic InGaP on GaAs and GaP for Wide ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

435

Page not found | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Categorical Exclusion Determination Energy Saving Phosphorescent Organic Light Emitting Diode (OLED) Luminaires CX(s) Applied: B3.6, B5.1 Date: 09142010 Location(s):...

436

K2, Photoluminescence of Bandgap-Graded InGaN Wires Grown by ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

437

R10, Synthesis and Charaterization of p-NiO/n-ZnO Heterojunction ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

438

GG4, Isothermal Method for Rapid, Steady-State Measurement of ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

439

Deposition of colloidal quantum dots by microcontact printing for LED display technology  

E-Print Network (OSTI)

This thesis demonstrates a new deposition method of colloidal quantum dots within a quantum dot organic light-emitting diode (QD-LED). A monolayer of quantum dots is microcontact printed as small as 20 ,Lm lines as well ...

Kim, LeeAnn

2006-01-01T23:59:59.000Z

440

Categorical Exclusion (CX) Determinations By Date | Department...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Categorical Exclusion Determination Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Ewing) CX(s) Applied: B3.6 Date: 03192010 Location(s):...

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Page not found | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Exclusion Determination Creation of a United States Phosphorescent Organic Light Emitting Diode Lighting Panel Pilot Facility CX(s) Applied: B3.6, B5.1 Date: 04022010...

442

Categorical Exclusion Determinations: National Energy Technology...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Categorical Exclusion Determination Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Ewing) CX(s) Applied: B3.6 Date: 03192010 Location(s):...

443

G10, Optimization of Dielectric Passivation of ZnO-Based Schottky ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

444

II3, 2?m Thick Device Quality GaN on Si(111) Using AlGaN Graded ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

445

CX-001472: Categorical Exclusion Determination | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Exclusion Determination Creation of a United States Phosphorescent Organic Light Emitting Diode Lighting Panel Pilot Facility CX(s) Applied: B3.6, B5.1 Date: 04022010...

446

Page not found | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Categorical Exclusion Determination Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Harmar) CX(s) Applied: B3.6 Date: 03192010 Location(s):...

447

CX-010821: Categorical Exclusion Determination  

Energy.gov (U.S. Department of Energy (DOE))

Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07/30/2013 Location(s): Pennsylvania Offices(s): National Energy Technology Laboratory

448

CX-001310: Categorical Exclusion Determination | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Categorical Exclusion Determination Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Ewing) CX(s) Applied: B3.6 Date: 03192010 Location(s):...

449

CX-001474: Categorical Exclusion Determination | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Exclusion Determination Creation of a United States Phosphorescent Organic Light Emitting Diode Lighting Panel Pilot Facility CX(s) Applied: B3.6, B5.1 Date: 04022010...

450

K1, Molecular Beam Epitaxy of Catalyst-Free InGaN/GaN Nanowires ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

451

CX-001309: Categorical Exclusion Determination | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Categorical Exclusion Determination Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Monroeville) CX(s) Applied: B3.6 Date: 03192010 Location(s):...

452

EE7, Effects of Carrier Localization on Emission Spectra of Dilute ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

453

The effect of inkjet ink composition on rheology and jetting behaviour  

E-Print Network (OSTI)

is relevant to several applications where the deposition of a controlled volume of fluid on a specific location is required. Inkjet printing [1], Organic Light Emitting Diode (OLED) [2] fabrication or Deoxyribonucleic Acid (DNA) [3] in situ synthesis...

Vadillo, D.C.; Hoath, S.D.; Hsiao, W.-K.; Mackley, M.R.

2011-01-01T23:59:59.000Z

454

O6, Influence of Stacking Fault Generation and Half Loop Array on ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

455

CX-010823: Categorical Exclusion Determination  

Energy.gov (U.S. Department of Energy (DOE))

Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07/30/2013 Location(s): Pennsylvania Offices(s): National Energy Technology Laboratory

456

Display blocks: cubic displays for multi-perspective visualization  

E-Print Network (OSTI)

We propose the design, implementation and evaluation of a set of tangible cubic displays. This novel approach to display technology consists of arranging six organic light emitting diode screens in a cubic form factor. We ...

Pla i Conesa, Pol

457

NETL: NETL Solicitation 2008 Archive  

NLE Websites -- All DOE Office Websites (Extended Search)

4: Electronics Development DE-PS26-08NT00291-05 Area of Interest 5: Organic Light Emitting Diode (OLED) Lighting Panel DE-PS26-08NT00291-06 Area of Interest 6: Low cost...

458

CX-001307: Categorical Exclusion Determination | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Categorical Exclusion Determination Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Harmar) CX(s) Applied: B3.6 Date: 03192010 Location(s):...

459

M2, Fabrication and Characterization of Graphene Materials Grown ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

460

CNST Group Seminars - 2010  

Science Conference Proceedings (OSTI)

... we present a recent investigation into the use of V[TCNE]x~2 as a spin injector in a hybrid organic/inorganic spin-light emitting diode (spin-LED ...

2013-10-25T23:59:59.000Z

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Towards Truly White LED Lighting | U.S. DOE Office of Science...  

NLE Websites -- All DOE Office Websites (Extended Search)

to emit light of different colors is a key step toward a new kind of organic light-emitting diode, or OLED, that can emit truly white light while improving efficiency and...

462

DD2, Polarization-Sensitive Schottky Photodiodes Based on A ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

463

U3, Epitaxial Graphene Materials Integration: Effects of Dielectric ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

464

Diffusion and submonolayer growth of para-sexiphenyl on Ir(111) and Ir(111)-supported graphene  

Science Conference Proceedings (OSTI)

Transparent, flexible, and conductive graphene sheets form an ideal substrate for the fabrication of organic light-emitting diodes. In order to obtain an optimal final device, it is vitally important to understand the underlying nucleation and growth ...

G. Hlawacek; F. S. Khokar; R. van Gastel; C. Teichert; B. Poelsema

2011-07-01T23:59:59.000Z

465

JJ1, Internal Quantum Efficiency of Polar and Non-Polar GaInN/GaN ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

466

Categorical Exclusion Determinations: National Energy Technology...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Exclusion Determination Creation of a United States Phosphorescent Organic Light Emitting Diode Lighting Panel Pilot Facility CX(s) Applied: B3.6, B5.1 Date: 04022010...

467

H8, A Novel Hybrid Electrical and Chemical Barrier Material for ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

468

Categorical Exclusion Determinations: B3.6 | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Exclusion Determination Creation of a United States Phosphorescent Organic Light Emitting Diode Lighting Panel Pilot Facility CX(s) Applied: B3.6, B5.1 Date: 04022010...

469

II2, GaN/AlN Heterostructures on Vertical {111} Fin Facets of Si (110)  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

470

JJ2, Optical Polarization of Non-Polar GaInN/GaN LEDs  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

471

United States Office of Air and Radiation EPA 402-R-96-017 Environmental Protection Office of Solid Waste and  

E-Print Network (OSTI)

Organization LED Light Emitting Diode LIE Long Island Expressway LINAC Linear accelerator MACT Maximum/2 Half-life TCA 1,1,1-Trichloroethane TCE Trichloroethylene TCLP Toxicity Characteristic Leaching

472

Liquid convective diodes  

DOE Green Energy (OSTI)

Liquid convective diodes are analyzed by experiments and theory. The experiments include flow visualization and temperature measurements. The dynamic behavior of a diode is analyzed and explained. Performance of three diodes of different designs that were installed in a test cell this past winter showed an average 50% thermal efficiency over a three-month period. If only the performance of the most efficient diode among the three is considered, it is expected that this figure may be increased to 60% or possibly 65% with some design improvements. A simple analytical model, which was developed earlier, is discussed. A comparison of reservoir temperatures from one of the test cell diodes with predicted temperatures from the model showed excellent agreement. The good agreement indicates that the model contains the elements that are necessary to accurately predict site-specific diode performance.

Jones, G.F.

1984-01-01T23:59:59.000Z

473

Hybrid electroluminescent devices  

DOE Patents (OSTI)

A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

Shiang, Joseph John (Niskayuna, NY); Duggal, Anil Raj (Niskayuna, NY); Michael, Joseph Darryl (Schenectady, NY)

2010-08-03T23:59:59.000Z

474

Photonics in Industry: Water Disinfection and Contamination Treatment Dr. Gordon Knight  

E-Print Network (OSTI)

lamps, light emitting diodes, and flash lamps. Optimizing the irradiance and wavelength of the light

Czarnecki, Krzysztof

475

Designing for One-Handed Use  

E-Print Network (OSTI)

#12;Study: Capturing Thumb Movement Light Emitting Diodes 3D spatial positions tracked with a motion

Golbeck, Jennifer

476

DIVISION 16 -ELECTRICAL 16000 GENERAL  

E-Print Network (OSTI)

converter, a line with a blue light (light emitting diode) converter (Droplet Measurement Technology, USA

477

CNRS-IBPC, UMR7141 13, rue Pierre et Marie Curie, F-75005 Paris, France Bio-Logic SA 1, rue de l'Europe F-38640 Claix Tel: +33 476 98 96 79 www.biol-logic.info  

E-Print Network (OSTI)

LDRD Laboratory Directed Research and Development LDV Light Duty Vehicle LED Light Emitting Diode LEL

Wollman, Francis-André

478

and Technical Terms AGC Annual Guideline Concentrations  

E-Print Network (OSTI)

Annual Monitoring Report LED Light Emitting Diode LIE Long Island Expressway LINAC Linear Accelerator MCL

479

2007 Annual Report The Frederick A. and Barbara M. Erb Institute for Global Sustainable Enterprise is a part-  

E-Print Network (OSTI)

­ Light Emitting Diode LEED ­ Leadership in Energy and Environmental Design NEPA ­ National Environmental

Edwards, Paul N.

480

Net community production in the deep euphotic zone of the subtropical North Pacific gyre from glider surveys  

E-Print Network (OSTI)

using light emitting diode (LED) service and warning lights on their vehicles. Almost all the responding

Note: This page contains sample records for the topic "organic light-emitting diode" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Energy Management/Conservation at The University of Saskatchewan  

E-Print Network (OSTI)

with LED (light emitting diode) exit lights. · The use of lower temperature rise distribution transformers

Peak, Derek

482

Tunable Visible and Near-IR Emission from Sub-10 nm Etched Single-Crystal Si  

E-Print Network (OSTI)

silicon devices in the form of light- emitting diode or laser structures. KEYWORDS Silicon nanowires

Heaton, Thomas H.

483

Characterization of Domain Ordering in Polymer and Dendrimer Thin Films Using Photoluminescence and Third Harmonic Generation (THG)  

E-Print Network (OSTI)

semiconductive polymers and dendrimeric materials for use in sensors, light emitting diodes, displays, and solar

Cohen, Ronald C.

484

, 20130383, published 24 July 201392013Biol. Lett. John Wang, Joel Barkan, Shara Fisler, Carlos Godinez-Reyes and Yonat Swimmer  

E-Print Network (OSTI)

. We examined the effectiveness of illuminating gillnets with ultraviolet (UV) light-emitting diodes

485

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 12, NO. 6, NOVEMBER/DECEMBER 2006 1647 Silicon Nanocrystal Field-Effect  

E-Print Network (OSTI)

-n junction light-emitting diodes, this device employs sequential unipolar programming of both electrons

Heaton, Thomas H.

487

National Aeronautics and Space Administration Trace Space Back to You.  

E-Print Network (OSTI)

-Illuminating Materials MEDICAL Light-Emitting Diodes (LEDs) ER Infrared Ear Thermometers Automatic Insulin Pumps

488

NEWS & VIEWS nature materials | VOL 4 | DECEMBER 2005 | www.nature.com/naturematerials 883  

E-Print Network (OSTI)

such as ultraviolet-light-emitting diodes, flat-panel displays, electroluminescent and triboluminescent devices

Downs, Robert T.

489

Agronomy Journal Volume 105, Issue 6 2013 1769 Crop Economics, Production & Management  

E-Print Network (OSTI)

include light emitting diodes, LEDs (Ryu et al., 2010), radiometers (Eklundh et al., 2011), and digital

Gitelson, Anatoly

490

2012 Symposium Final Presentations Research Experience for Undergraduates (REU), Research Experience for Teachers (RET)  

E-Print Network (OSTI)

students. BOM: LED (Light Emitting Diode), breadboard, resistor, Wires, 9V battery, Potentiometer to manage

Linhardt, Robert J.

492

2012 10 16 LEDLEDLEDLED  

E-Print Network (OSTI)

A novel phosphor for glareless white light-emitting diodes Hisayoshi Daicho, Takeshi Iwasaki, Kiminori

493

PRESS RELEASE Tokyo Institute of Technology researchers develop blue-fluorescent  

E-Print Network (OSTI)

novel applications in devices such as chemosensors, biological probes, and light-emitting diodes. Key

Furui, Sadaoki

494

ODALab/School of EECS An Augmented Reality  

E-Print Network (OSTI)

Visualization System ­ hardware components ­ software components · Infrared Light Emitting Diodes (IREDs

Hamza-Lup, Felix G.

495

OPTIMIZED SYNTHESIS BY CHEMICAL VAPOR DEPOSITION OF ATOMIC LAYER HEXAGONAL BORON NITRIDE  

E-Print Network (OSTI)

and optical properties such as high mobility electron transistors and far ultraviolet light emitting diodes

Mellor-Crummey, John

496

This paper demonstrates how the study of motion behaviour can be usefully assisted by Virtual Reality  

E-Print Network (OSTI)

, uses infrared light emitting diodes as markers being illuminated sequentially. In order to interact

Kuhlen, Torsten

497

APPLIED RESEARCH CENTER HIGH-TECH SOLUTIONS  

E-Print Network (OSTI)

Industrial: Light Emitting Diodes (LED), Precision Cutting, Drilling, Hardening, Marking, Engraving, Melting

498

Behavior Research Methods & Instrumentation 1978, Vol. 10 (2),148-153  

E-Print Network (OSTI)

) and light-emitting diodes (LED) (Nealis, Engelke, & Massaro, 1973). Factors to be considered in evaluating

Massaro, Dominic

499

Table Set-up with Materials Target Audience: Parents of elementary school students (grades 3-6) and Middle and High School Students  

E-Print Network (OSTI)

students. BOM: LED (Light Emitting Diode), breadboard, resistor, Wires, 9V battery, Potentiometer to manage

Linhardt, Robert J.

500

Metameric Modulation for Diffuse Visible Light Communications with Constant Ambient Lighting  

E-Print Network (OSTI)

untapped for wireless communications. Advancements in light emitting diode (LED) technology are making

Little, Thomas