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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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1

Optoelectronic device  

DOE Patents [OSTI]

The invention is an optoelectronic device comprising an active portion which converts light to electricity or converts electricity to light, the active portion having a front side for the transmittal of the light and a back side opposite from the front side, at least two electrical leads to the active portion to convey electricity to or from the active portion, an enclosure surrounding the active portion and through which the at least two electrical leads pass wherein the hermetically sealed enclosure comprises at the front side of the active portion a barrier material which allows for transmittal of light, one or more getter materials disposed so as to not impede the transmission of light to or from the active portion, and a contiguous gap pathway to the getter material which pathway is disposed between the active portion and the barrier material.

Bonekamp, Jeffrey E.; Boven, Michelle L.; Gaston, Ryan S.

2014-09-09T23:59:59.000Z

2

"Develop enabling optoelectronic devices for broadband  

E-Print Network [OSTI]

"Develop enabling optoelectronic devices for broadband communications and photonic systems Group Our group focuses on optoelectronic devices and photonic integrated circuits to photodiodes with the highest linearity and output power to date. High-Speed Optoelectronic Devices Driven

Acton, Scott

3

Technische Universiteit Eindhoven Opto-Electronic Devices  

E-Print Network [OSTI]

in micro­ and optoelectronic devices. TUHH Heinrich Voss Iterative projection methods New Orleans 2005 4 and their potential for applications in micro­ and optoelectronic devices. In such nanostructures, the free carriers of their special physical properties and their potential for applications in micro­ and optoelectronic devices

Lipari, Giuseppe

4

Cadmium Zinc Oxide Based Optoelectronics Materials and Devices  

E-Print Network [OSTI]

201907. [45] 2010 Optoelectronics Market Report. Databeans,candidate of wide bandgap optoelectronics applications, ZnOZinc Oxide Based Optoelectronics Materials and Devices A

Li, Lin

2011-01-01T23:59:59.000Z

5

Nanosized Optoelectronic Devices Based on Photoactivated Proteins Alice Dimonte,*,  

E-Print Network [OSTI]

Nanosized Optoelectronic Devices Based on Photoactivated Proteins Alice Dimonte,*, Stefano Frache gold electrodes have been used to develop optoelectronic devices based on photoactive proteins

De Micheli, Giovanni

6

Elastic fields in optoelectronic devices John H. Davies  

E-Print Network [OSTI]

optoelectronic devices with enhanced performances (Mitzi et al. 1995). Indeed, such layered structures have been

Davies, John H.

7

Monolithic integration of thin-film coolers with optoelectronic devices  

E-Print Network [OSTI]

Monolithic integration of thin-film coolers with optoelectronic devices Christopher La Barbara, California 93106-9560 Abstract. Active refrigeration of optoelectronic components through the use manuscript received June 30, 2000; accepted for publication June 30, 2000. 1 Introduction Optoelectronic

8

Optoelectronics Devices Based on Zinc Oxide Thin Films and Nanostructures  

E-Print Network [OSTI]

is promising for UV optoelectronics, such as photodetectors,for future ZnO optoelectronics. References . zgr, Ya. I.OF THE DISSERTATION Optoelectronics Devices Based on Zinc

Chu, Sheng

2011-01-01T23:59:59.000Z

9

Optoelectronic semiconductor device and method of fabrication  

DOE Patents [OSTI]

An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.

Cui, Yi; Zhu, Jia; Hsu, Ching-Mei; Fan, Shanhui; Yu, Zongfu

2014-11-25T23:59:59.000Z

10

Identification of Emergent Research Issues: the Case of Optoelectronic Devices  

E-Print Network [OSTI]

7 Identification of Emergent Research Issues: the Case of Optoelectronic Devices Ivana Roche1-City-Stra?e 1, 1220 Wien 1France 2Austria 1. Introduction The optoelectronic devices field is one of the last, published in "openelectroonic Devices and Properties (2011)" #12;Optoelectronic Devices and Properties126

Paris-Sud XI, Université de

11

Functionalized polyfluorenes for use in optoelectronic devices  

DOE Patents [OSTI]

The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

Chichak, Kelly Scott (Clifton Park, NY); Lewis, Larry Neil (Scotia, NY); Cella, James Anthony (Clifton Park, NY); Shiang, Joseph John (Niskayuna, NY)

2011-11-01T23:59:59.000Z

12

Femtosecond-laser Microstructuring of Silicon for Novel Optoelectronic Devices  

E-Print Network [OSTI]

Femtosecond-laser Microstructuring of Silicon for Novel Optoelectronic Devices A thesis presented Femtosecond-laser Microstructuring of Silicon for Novel Optoelectronic Devices Eric Mazur James E. Carey III silicon and reports on its first application in optoelectronic devices. Irradia- tion of a silicon surface

Mazur, Eric

13

Impact of optical antennas on active optoelectronic devices  

E-Print Network [OSTI]

Impact of optical antennas on active optoelectronic devices Alireza Bonakdar and Hooman Mohseni that are integrated with optoelectronic devices. Herein, we describe the fundamental reasons for and experimental antennas with optoelectronic devices can lead to the realization of highly compact multifunctional

Mohseni, Hooman

14

Optical and optoelectronic fiber devices  

E-Print Network [OSTI]

The ability to integrate materials with disparate electrical, thermal, and optical properties into a single fiber structure enabled the realization of fiber devices with diverse and complex functionalities. Amongst those, ...

Shapira, Ofer, Ph. D. Massachusetts Institute of Technology

2007-01-01T23:59:59.000Z

15

Exploiting Collective Effects of Multiple Optoelectronic Devices Integrated in a  

E-Print Network [OSTI]

Exploiting Collective Effects of Multiple Optoelectronic Devices Integrated in a Single Fiber. In this work, we demonstrate the successful fabrication of an eight-device cascaded optoelectronic fiber of integrating multiple optoelectronic components into a single fiber cross-section. This is in fact a common

California at Irvine, University of

16

14:332:466 Optoelectronic Devices Instructor: Prof. Wei Jiang  

E-Print Network [OSTI]

14:332:466 Optoelectronic Devices Fall 2010 Instructor: Prof. Wei Jiang Time & Place: T.Th 6:40pm-8: (732) 445-2164 Course Catalog Description: 14:332:466 Optoelectronic Devices (3) Pre-Requisite Courses), ISBN 0471358320 S. O. Kasap, Optoelectronics and photonics: principles and practices, Prentice

Jiang, Wei

17

14:332:466 Optoelectronic Devices Instructor: Prof. Wei Jiang  

E-Print Network [OSTI]

14:332:466 Optoelectronic Devices Fall 2009 Instructor: Prof. Wei Jiang Time & Place: T.Th 6:40pm-8@rci.rutgers.edu Phone: (732) 445-2164 Course Catalog Description: 14:332:466 Optoelectronic Devices (3) Pre), ISBN 0471358320 · S. O. Kasap, Optoelectronics and photonics: principles and practices, Prentice

Jiang, Wei

18

14:332:466 Optoelectronic Devices Instructor: Prof. Wei Jiang  

E-Print Network [OSTI]

14:332:466 Optoelectronic Devices Fall 2011 Instructor: Prof. Wei Jiang Time & Place: T.Th 6:40pm-8: (732) 445-2164 Course Catalog Description: 14:332:466 Optoelectronic Devices (3) Pre-Requisite Courses of Photonics, Wiley-Interscience, 2nd edition (2007), ISBN 0471358320 S. O. Kasap, Optoelectronics

Jiang, Wei

19

header for SPIE use Integrated cooling for optoelectronic devices  

E-Print Network [OSTI]

header for SPIE use Integrated cooling for optoelectronic devices Christopher LaBounty*a , Ali refrigeration of optoelectronic components through the use of thin film solid state coolers based on III 1. INTRODUCTION Optoelectronic devices such as laser sources, switching/routing elements

20

Fundamental approach for optoelectronic and microfluidic integration for miniaturizing spectroscopic devices  

E-Print Network [OSTI]

Fundamental approach for optoelectronic and microfluidic integration for miniaturizing, optoelectronic, soft lithography 1. INTRODUCTION Over the past few years, the application of micromachining. This property allows for integration of elastomer microfluidic devices and optoelectronic devices to perform

Quake, Stephen R.

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Functionalized polyfluorenes for use in optoelectronic devices  

DOE Patents [OSTI]

The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## wherein R.sup.1 and R.sup.2 are independently alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.5is H or CHO; R.sup.3 and R.sup.4 are independently hydrogen, alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.11 and R.sup.12 taken together form a substituted or unsubstituted monocyclic or bicyclic heteroaromatic ring; R.sup.13 is independently at each occurrence halo, nitro, hydroxy, amino, alkyl, aryl, arylalkyl, alkoxy, substituted alkoxy, substituted alkyl, substituted aryl, or substituted arylalkyl; Ar is aryl, heteroaryl, substituted aryl, substituted heteroaryl, or a combination thereof; X is selected from a direct bond, alky, substituted alkyl, and combinations thereof; Y is CHO or NH.sub.2; Z is CHO or NH.sub.2 where Z does not equal Y; and p is 0, 1 or 2. The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

Chichak, Kelly Scott (Clifton Park, NY); Lewis, Larry Neil (Scotia, NY); Cella, James Anthony (Clifton Park, NY); Shiang, Joseph John (Niskayuna, NY)

2011-11-08T23:59:59.000Z

22

Emissive polymeric materials for optoelectronic devices  

DOE Patents [OSTI]

Polymers including at least one structural unit derived from a compound of formula I or including at least one pendant group of formula II may be used in optoelectronic devices ##STR00001## wherein R.sup.1, R.sup.3, R.sup.4 and R.sup.6 are independently hydrogen, alkyl, alkoxy, oxaalkyl, alkylaryl, aryl, arylalkyl, heteroaryl, substituted alkyl; substituted alkoxy, substituted oxaalkyl, substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted heteroaryl; R.sup.1a is hydrogen or alkyl; R.sup.2 is alkylene, substituted alkylene, oxaalkylene, CO, or CO.sub.2; R.sup.2a is alkylene; R.sup.5 is independently at each occurrence hydrogen, alkyl, alkylaryl, aryl, arylalkyl, alkoxy, carboxy, substituted alkyl; substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted alkoxy, X is halo, triflate, --B(OR.sup.1a).sub.2, or ##STR00002## located at the 2, 5- or 2, 7-positions; and L is derived from phenylpyridine, tolylpyridine, benzothienylpyridine, phenylisoquinoline, dibenzoquinozaline, fluorenylpyridine, ketopyrrole, 2-(1-naphthyl)benzoxazole)), 2-phenylbenzoxazole, 2-phenylbenzothiazole, coumarin, thienylpyridine, phenylpyridine, benzothienylpyridine, 3-methoxy-2-phenylpyridine, thienylpyridine, phenylimine, vinylpyridine, pyridylnaphthalene, pyridylpyrrole, pyridylimidazole, phenylindole, derivatives thereof or combinations thereof.

Shiang, Joseph John (Niskayuna, NY); Chichak, Kelly Scott (Clifton Park, NY); Cella, James Anthony (Clifton Park, NY); Lewis, Larry Neil (Scotia, NY); Janora, Kevin Henry (Schenectady, NY)

2011-07-05T23:59:59.000Z

23

PHYSICAL AND ELECTRICAL PROPERTIES OF In2O3 : Sn FILMS. APPLICATIONS TO OPTOELECTRONIC DEVICES  

E-Print Network [OSTI]

threshold, which constitutes the major drawback for LN based-optoelectronic devices, even for low power

Boyer, Edmond

24

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication Applications  

E-Print Network [OSTI]

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication ApplicationsGe/Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. In There is immense interest in the realization of Si-based optoelectronic devices, optoelectronic integrated circuits

Rieh, Jae-Sung

25

The rapid progress of nanoscale science and technology challenges the optoelectronics community to develop ever smaller lasers and other optoelectronic devices compatible with  

E-Print Network [OSTI]

The miniaturization of optoelectronic devices such as light emitting diodes or semiconduc- tor lasers, is expected

Wu, Shin-Tson

26

Method of fabricating an optoelectronic device having a bulk heterojunction  

DOE Patents [OSTI]

A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.

Shtein, Max (Ann Arbor, MI); Yang, Fan (Princeton, NJ); Forrest, Stephen R. (Princeton, NJ)

2008-10-14T23:59:59.000Z

27

Epsilon Near Zero mode for active optoelectronic devices S. Vassant,1, 2  

E-Print Network [OSTI]

are the basis for today's optoelectronic devices like white LEDs, blue/green lasers, UV photodetectors and LEDs-nitrides is hence likely to lead to novel optoelectronic devices. While there has been a lot of work on the use

Paris-Sud XI, Université de

28

Optoelectronic devices utilizing materials having enhanced electronic transitions  

DOE Patents [OSTI]

An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Black, Marcie R.

2013-04-09T23:59:59.000Z

29

Optoelectronic devices utilizing materials having enhanced electronic transitions  

DOE Patents [OSTI]

An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Black, Marcie R. (Newton, MA)

2011-02-22T23:59:59.000Z

30

Electrically Confined Quantum Dot Intersubband Optoelectronic Devices Wei Wu, Dibyendu Dey, Omer G. Memis, Alex Katnelson, and *Hooman Mohseni  

E-Print Network [OSTI]

and optoelectronic devices, lasers and their applications. The Systems area focuses on wireless communication systems 361 Quantum Mechanics For Engineers ELEC 462 Optoelectronic Devices PHYS 302 Intermediate

Mohseni, Hooman

31

ECE 308 -Spring 2005 Physics and Models of Electronics and Optoelectronics Devices (3)  

E-Print Network [OSTI]

ECE 308 - Spring 2005 Physics and Models of Electronics and Optoelectronics Devices (3) Lecture Heterostructure (Lecture Notes) 9. Semiconductor Optoelectronic Devices: Lasers, LEDs, Photodiodes, and Solar of semiconductor optoelectronic devices. Homework Policy: 1. Homework is given on every Thursday, and due

Gilchrist, James F.

32

ZnO Nanowire Array-Based Optoelectronic Devices  

E-Print Network [OSTI]

for future flexible optoelectronics application. 2.5nanoelectronics and optoelectronics. In this dissertation,nanoelectronics and optoelectronics. Ag, a group Ib element,

Wang, Guoping

2011-01-01T23:59:59.000Z

33

Optoelectronic devices for optical chaos communications Claudio R. Mirassoa, Ingo Fischerb, Laurent Largerc  

E-Print Network [OSTI]

Optoelectronic devices for optical chaos communications Claudio R. Mirassoa, Ingo Fischerb, Laurent-of-the-art in optoelectronic devices for chaos generation and message encryption. We concentrate on two kind of chaos based also work when using incoherent optical feedback9 or linear optoelectronic feedback.10 The success

Fischer, Ingo

34

Preparation of Optoelectronic Devices Based on AlN/AlGaN Superlattices M. Holtz,a,b  

E-Print Network [OSTI]

of QDs also suggest strategies for improving the efficiency of optoelectronic devices through vectorial

Holtz, Mark

35

Sol-gel coatings for optoelectronic devices  

SciTech Connect (OSTI)

Nb{sub 2}O{sub 5} prepared by a sol-gel process in form of coatings and aerogels are new materials which present interesting properties: (a) The coatings present electrochromic properties and exhibit a blue coloration under Li{sup +} insertion with 100% reversible variation of the optical transmission in the visible and near infrared range between 80% and 200% and have a high chemical stability (tested up to 2,000 cycles). (b) They are semiconductor and present a photoelectric effect when illuminating in the UV region ({lambda} < 360 nm). These films are therefore very promising to be used in electrochromic devices, as electrodes for photoelectrochemical purpose and the development of nanocrystalline solar cell. (c) When prepared in aerogel form, the high BET surface area of the powders is a promising asset to use these new materials for catalytic purposes for air pollution control.

Avellaneda, C.O.; Macedo, M.A.; Florentino, A.O.; Aegerter, M.A. [Univ. of Sao Paulo, Sao Carlos (Brazil). Inst. de Fisica e Quimica

1994-12-31T23:59:59.000Z

36

Method And Apparatus For Coupling Optical Elements To Optoelectronic Devices For Manufacturing Optical Transceiver Modules  

DOE Patents [OSTI]

A process is provided for aligning and connecting at least one optical fiber to at least one optoelectronic device so as to couple light between at least one optical fiber and at least one optoelectronic device. One embodiment of this process comprises the following steps: (1) holding at least one optical element close to at least one optoelectronic device, at least one optical element having at least a first end; (2) aligning at least one optical element with at least one optoelectronic device; (3) depositing a first non-opaque material on a first end of at least one optoelectronic device; and (4) bringing the first end of at least one optical element proximate to the first end of at least one optoelectronic device in such a manner that the first non-opaque material contacts the first end of at least one optoelectronic device and the first end of at least one optical element. The optical element may be an optical fiber, and the optoelectronic device may be a vertical cavity surface emitting laser. The first non-opaque material may be a UV optical adhesive that provides an optical path and mechanical stability. In another embodiment of the alignment process, the first end of at least one optical element is brought proximate to the first end of at least one optoelectronic device in such a manner that an interstitial space exists between the first end of at least one optoelectronic device and the first end of at least one optical element.

Anderson, Gene R. (Albuquerque, NM); Armendariz, Marcelino G. (Albuquerque, NM); Bryan, Robert P. (Albuquerque, NM); Carson, Richard F. (Albuquerque, NM); Chu, Dahwey (Albuquerque, NM); Duckett, III, Edwin B. (Albuquerque, NM); Giunta, Rachel Knudsen (Albuquerque, NM); Mitchell, Robert T. (Albuquerque, NM); McCormick, Frederick B. (Albuquerque, NM); Peterson, David W. (Sandia Park, NM); Rising, Merideth A. (Santa Fe, NM); Reber, Cathleen A. (Corrales, NM); Reysen, Bill H. (Lafayette, CO)

2005-06-14T23:59:59.000Z

37

Thin film optical waveguide and optoelectronic device integration for fully embedded board level optical interconnects  

E-Print Network [OSTI]

Thin film optical waveguide and optoelectronic device integration for fully embedded board level on to the waveguide film. Measured propagation loss of the waveguide was 0.3dB/cm at 850nm. Keywords: optoelectronic between electronic and optoelectronic components as conventional approaches do, and additionally, real

Chen, Ray

38

An advanced diffusion model to identify emergent research issues: the case of optoelectronic devices  

E-Print Network [OSTI]

1 An advanced diffusion model to identify emergent research issues: the case of optoelectronic of keywords in published articles. In this paper we show how emerging topics in the field of optoelectronic the identified keywords were used to technological topics in the field of optoelectronic devices

Boyer, Edmond

39

Method of fabricating an optoelectronic device having a bulk heterojunction  

DOE Patents [OSTI]

A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode. As a further example, when the first layer is an electron acceptor layer, the first electrode is a cathode, the second layer is an electron donor layer, and the second electrode is an anode.

Shtein, Max (Princeton, NJ); Yang, Fan (Princeton, NJ); Forrest, Stephen R. (Princeton, NJ)

2008-09-02T23:59:59.000Z

40

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices  

DOE Patents [OSTI]

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Wanlass, Mark W.; Carapella, Jeffrey J.

2014-07-08T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Research Staff Openings in Organic Optoelectronic Devices Contact Person: Dr. Wallace C.H. Choy, Department of Electrical and Electronic  

E-Print Network [OSTI]

Research Staff Openings in Organic Optoelectronic Devices Contact Person: Dr. Wallace C.H. Choy the quantum efficiency of organic optoelectronic devices particularly organic solar cells and then organic

Leung, Ka-Cheong

42

Source and channel coding for low-bandwidth speech communication between optoelectronic devices  

E-Print Network [OSTI]

Optical communication is one solution to the communication problem that many military forces face in today's urban environments. The recent advances in optoelectronic fibers by the Photonic Bandgap Fibers and Devices Group ...

Perry, Daniel S

2009-01-01T23:59:59.000Z

43

The research of Dr. Rafi Shikler is focused on organic and organic/inorganic hybrid optoelectronic devices. In specifically to study the physical processes that take place  

E-Print Network [OSTI]

are discussed. The science and technology of electronic and optoelectronic devices based on organic -conjugated

Vardi, Amichay

44

3252 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 54, NO. 12, DECEMBER 2007 Silicon Germanium CMOS Optoelectronic Switching  

E-Print Network [OSTI]

Optoelectronic Switching Device: Bringing Light to Latch Ali K. Okyay, Student Member, IEEE, Duygu Kuzum, Student. Saraswat, Fellow, IEEE Abstract--We propose a novel semiconductor optoelectronic (OE) switch--Germanium, integrated optoelectronics, metal­ oxide­semiconductor field-effect transistor (MOSFET) switches, optical

Miller, David A. B.

45

Metamaterial mirrors in optoelectronic devices Majid Esfandyarpour1, Erik C. Garnett1, Yi Cui1,2, Michael D. McGehee1 and Mark L. Brongersma1  

E-Print Network [OSTI]

Metamaterial mirrors in optoelectronic devices Majid Esfandyarpour1, Erik C. Garnett1, Yi Cui1 is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical optoelectronic devices becomes obvious when an active semiconductor layer is placed in direct contact

Cui, Yi

46

Physics of Optoelectronic and Plasmonic Devices: Cavities, Waveguides, Modulators and Lasers  

E-Print Network [OSTI]

electronics and optoelectronics: Exploring nanoscale scienceInternational Journal of Optoelectronics 11, 155-168 (impact of plasmonic lasers on optoelectronics integration is

Sorger, Volker J.

2011-01-01T23:59:59.000Z

47

2,5-linked polyfluorenes for optoelectronic devices  

DOE Patents [OSTI]

Polyfluorene polymers and copolymers having substantial amounts (10-100%) of fluorenes coupled at the 2 and 5 positions of fluorene are useful as active layers in OLED devices where triplet energies >2.10 eV are required.

Cella, James Anthony (Clifton Park, NY); Shiang, Joseph John (Niskayuna, NY); Shanklin, Elliott West (Altamont, NY); Smigelski, Jr, Paul Michael (Scotia, NY)

2011-06-28T23:59:59.000Z

48

2,5-linked polyfluorenes for optoelectronic devices  

DOE Patents [OSTI]

Polyfluorene polymers and copolymers having substantial amounts (10-100%) of fluorenes coupled at the 2 and 5 positions of fluorene are useful as active layers in OLED devices where triplet energies >2.10 eV are required.

Cella, James Anthony (Clifton Park, NY); Shiang, Joseph John (Niskayuna, NY); Shanklin, Elliott West (Altamont, NY); Smigelski, Paul Michael (Scotia, NY)

2009-12-22T23:59:59.000Z

49

2,5-linked polyfluorenes for optoelectronic devices  

DOE Patents [OSTI]

Polyfluorene polymers and copolymers having substantial amounts (10-100%) of fluorenes coupled at the 2 and 5 positions of fluorene are useful as active layers in OLED devices where triplet energies >2.10 eV are required.

Cella, James Anthony (Clifton Park, NY); Shiang, Joseph John (Niskayuna, NY); Shanklin, Elliott West (Altamont, NY); Smigelski, Jr., Paul Michael (Scotia, NY)

2011-11-08T23:59:59.000Z

50

Two examples of organic opto-electronic devices: Light emitting diodes and solar cells  

Science Journals Connector (OSTI)

Organic and polymeric (plastic) opto-electronic devices have been developed over the past decade and some of them have made the leap from the research laboratory to commercial use. We present a simple and inexpensive method of fabricating organic light emitting diodes and organic photovoltaic cells. The devices are fabricated by the deposition of solid films based on the fluorescent polymer MEH:PPV using the spin-coating technique. The films were sandwiched between electrodes one of which was made of Bi-Pb-Cd-Sn alloy. An overview of these two devices is also provided.

J. L. Maldonado; G. Ramos-Ortz; M. L. Miranda; S. Vzquez-Crdova; M. A. Meneses-Nava; O. Barbosa-Garca; M. Ortz-Gutirrez

2008-01-01T23:59:59.000Z

51

0-7803-8363-X/04/$20.00 2004 IEEE 20th IEEE SEMI-THERM Symposium Superlattice Microrefrigerators Flip-Chip Bonded with Optoelectronic Devices  

E-Print Network [OSTI]

Flip-Chip Bonded with Optoelectronic Devices Yan Zhang1 , Gehong Zeng1 , Joachim Piprek2 , Avram Bar these microrefrigerator with the optoelectronic chips. Preliminary 3D electrothermal simulation will be present to analyze to microrefrigerator mA 1. Introduction Current trends in optoelectronic devices are to increase the speed, multi

52

Silicon microbench heater elements for packaging opto-electronic devices  

SciTech Connect (OSTI)

Examples are presented of the application of Lawrence Livermore National Laboratory`s expertise in photonics packaging. Several examples of packaged devices will be described. Particular attention is given to silicon microbenches incorporating heaters and their use in semiconductor optical amplifier fiber pigtailing and packaging.

Combs, R.; Keiser, P.; Kleint, K.; Pocha, M.; Patterson, F.; Strand, O.T.

1995-09-01T23:59:59.000Z

53

Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby  

DOE Patents [OSTI]

A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu

2014-04-01T23:59:59.000Z

54

Photochemical deterioration of the organic/metal contacts in organic optoelectronic devices  

SciTech Connect (OSTI)

We study the effect of exposure to light on a wide range of organic/metal contacts that are commonly used in organic optoelectronic devices and found that irradiation by light in the visible and UV range results in a gradual deterioration in their electrical properties. This photo-induced contact degradation reduces both charge injection (i.e., from the metal to the organic layer) and charge extraction (i.e., from the organic layer to the metal). X-ray photoelectron spectroscopy (XPS) measurements reveal detectable changes in the interface characteristics after irradiation, indicating that the photo-degradation is chemical in nature. Changes in XPS characteristics after irradiation suggests a possible reduction in bonds associated with organic-metal complexes. Measurements of interfacial adhesion strength using the four-point flexure technique reveal a decrease in organic/metal adhesion in irradiated samples, consistent with a decrease in metal-organic bond density. The results shed the light on a new material degradation mechanism that appears to have a wide presence in organic/metal interfaces in general, and which likely plays a key role in limiting the stability of various organic optoelectronic devices such as organic light emitting devices, organic solar cells, and organic photo-detectors.

Wang Qi; Williams, Graeme; Aziz, Hany [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Tsui Ting [Department of Chemical Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

2012-09-15T23:59:59.000Z

55

Opto-Electron. Rev., 19, no. 3, 2011 I Opto-Electronics Review  

E-Print Network [OSTI]

electrodes in optoelectronic devices, electrical sheet resistance and optical transmittance are two) are essential components for numerous optoelectronic devices that require transport of both electrons

New Mexico, University of

56

English language learners' reading self-efficacy and achievement using 1:1 mobile learning devices  

E-Print Network [OSTI]

devices support collaborative practice in speaking and listening?listening, reading, and writing English. Mobile technology devices

Walters, Jennifer L.

2012-01-01T23:59:59.000Z

57

The integration of surface micromachined devices with optoelectronics: Technology and applications  

SciTech Connect (OSTI)

Sandia National Laboratories has a substantial effort in development of microelectromechanical system (MEMS) technologies. This miniaturization capability can lead to low-cost, small, high-performance systems-on-a-chip, and have many applications ranging from advanced military systems to large-volume commercial markets like automobiles, rf or land-based communications networks and equipment, or commercial electronics. One of the key challenges in realization of the microsystem is integration of several technologies including digital electronics; analog and rf electronics, optoelectronics, sensors and actuators, and advanced packaging technologies. In this work they describe efforts in integrating MEMS and optoelectronic or photonic functions and the fabrication constraints on both system components. the MEMS technology used in this work are silicon surface-machined systems fabricated using the SUMMiT (Sandia Ultraplanar Multilevel MEMS Technology) process developed at Sandia. This process includes chemical-mechanical polishing as an intermediate planarization step to allow the use of 4 or 5 levels of polysilicon.

Warren, M.E.; Blum, O.; Sullivan, C.T.; Shul, R.J.; Rodgers, M.S.; Sniegowski, J.J.

1998-04-01T23:59:59.000Z

58

Microfabrication in optoelectronics (Opti-677) Instructor: Mahmoud Fallahi  

E-Print Network [OSTI]

Microfabrication in optoelectronics (Opti-677) Instructor: Mahmoud Fallahi 2 credit course and optoelectronic components. It covers epitaxial growth, lithography and processing steps of compound semiconductors frequently used in micro/nano-fabrication of optical and optoelectronic devices. Fabrication

Arizona, University of

59

Integrated Quantum Optoelectronics Lab Integrated Quantum Optoelectronics Lab at University of Washington (UW), Seattle is seeking  

E-Print Network [OSTI]

Integrated Quantum Optoelectronics Lab Integrated Quantum Optoelectronics Lab at University-matter interaction to enable scalable, extremely low power opto-electronics. The applications, for which we are developing these opto-electronic devices, include efficient electro-optic modulators, optical computing

Washington at Seattle, University of

60

Photophysical Properties and Optoelectronic Device Applications of a Novel Naphthalene?Vinylene Type Conjugated Polymer  

Science Journals Connector (OSTI)

Figure 7 Current?voltage characteristics of photovolatic devices:? (a) 1:3 polymer 1:? PCBM, light (filled squares), dark (open squares); (b) 1:3 MDMO?PPV:PCBM, light (filled squares), dark (open squares). ...

Gerald Zerza; Birgit Rthler; N. Serdar Sariciftci; Rafael Gmez; Jos L. Segura; Nazario Martn

2001-04-20T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Optoelectronic Mounting Structure  

DOE Patents [OSTI]

An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

Anderson, Gene R. (Albuquerque, NM); Armendariz, Marcelino G. (Albuquerque, NM); Baca, Johnny R. F. (Albuquerque, NM); Bryan, Robert P. (Albuquerque, NM); Carson, Richard F. (Albuquerque, NM); Chu, Dahwey (Albuquerque, NM); Duckett, III, Edwin B. (Albuquerque, NM); McCormick, Frederick B. (Albuquerque, NM); Peterson, David W. (Sandia Park, NM); Peterson, Gary D. (Albuquerque, NM); Reber, Cathleen A. (Corrales, NM); Reysen, Bill H. (Lafayette, CO)

2004-10-05T23:59:59.000Z

62

III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.  

SciTech Connect (OSTI)

The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.

Kurtz, Steven Ross; Hargett, Terry W.; Serkland, Darwin Keith; Waldrip, Karen Elizabeth; Modine, Normand Arthur; Klem, John Frederick; Jones, Eric Daniel; Cich, Michael Joseph; Allerman, Andrew Alan; Peake, Gregory Merwin

2003-12-01T23:59:59.000Z

63

Induced Optical Losses in Optoelectronic Devices due to Focused Ion Beam Damages  

E-Print Network [OSTI]

A study of damages caused by gallium focused ion beam (FIB) into III-V compounds is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analysis shows that local heating is negligible. Gallium implantation is shown to occur over areas tens of nanometers thick. Gallium accumulation as well as selective sputtering during III-V compounds milling is expected. Particularly, for GaAs, this effect leads to gallium segregation and formation of metallic clusters. Microdisk resonators were fabricated using FIB milling with different emission currents to analyze these effects on a device. It is shown that for higher emission current, thus higher implantation doses, the cavity quality factor rapidly decreases due to optical scattering losses induced by implanted gallium atoms.

Vallini, Felipe; Reis, Elohim Fonseca dos; von Zuben, Antnio Augusto; Frateschi, Newton Cesrio

2012-01-01T23:59:59.000Z

64

Performance of a malaria microscopy image analysis slide reading device  

Science Journals Connector (OSTI)

Accurate machine reading of malaria blood films would revolutionize malaria diagnosis and this study is an excellent examination of the state of this art.

William R Prescott; Robert G Jordan; Martin P Grobusch; Vernon M Chinchilli; Immo Kleinschmidt; Joseph Borovsky; Mark Plaskow; Miguel Torrez; Maximo Mico; Christopher Schwabe

2012-05-06T23:59:59.000Z

65

CONCEPTS FOR TEACHING OPTOELECTRONIC CIRCUITS AND SYSTEMS  

E-Print Network [OSTI]

CONCEPTS FOR TEACHING OPTOELECTRONIC CIRCUITS AND SYSTEMS Smail TEDJINI, Benoit PANNETIER, Laurent.Lastname@esisar.inpg.fr Keywords : Optoelectronic devices, optical signals, communication systems, modeling, simulation, CAD and design of optical communication and optoelectronic systems is now necessary for the engineers

Boyer, Edmond

66

Project/Research Opportunities Integrated Optoelectronics Group  

E-Print Network [OSTI]

Project/Research Opportunities Integrated Optoelectronics Group Department of Electrical-effective functional photonic/optoelectronic devices/circuits are at high demands now-a-days for applications-on-insulator (SOI) substrate has been established to be an attractive platform for a photonic/optoelectronic

Das, Bijoy Krishna

67

Mobile Collaboration: Collaboratively Reading and Creating Children's Stories on Mobile Devices  

E-Print Network [OSTI]

Mobile Collaboration: Collaboratively Reading and Creating Children's Stories on Mobile Devices 20742 allisond@umiacs.umd.edu, mona@cs.umd.edu ABSTRACT This paper discusses design iterations of Mobile Stories ­ a mobile technology that empowers children to collaboratively read and create stories. We

Golbeck, Jennifer

68

PHYSICAL REVIEW E 84, 016213 (2011) Isochronal chaos synchronization of delay-coupled optoelectronic oscillators  

E-Print Network [OSTI]

-coupled optoelectronic oscillators Lucas Illing,* Cristian D. Panda, and Lauren Shareshian Department of Physics, Reed; published 19 July 2011) We study experimentally chaos synchronization of nonlinear optoelectronic true for optical and optoelectronic devices that operate at technologically relevant radio frequen

Illing, Lucas

69

16:332:468:04 Capstone Design -Optoelectronics Spring 2011  

E-Print Network [OSTI]

16:332:468:04 Capstone Design - Optoelectronics Spring 2011 Instructor: Dr. Wei Jiang Time: (732) 445-2164 Prerequisites: 332:382 Electromagnetic Fields and 332:466 Optoelectronic Devices. Course Description: Students will design and implement an optoelectronic device or system. Four steps: (1) Design; (2

Jiang, Wei

70

High Bandgap III-V Alloys for High Efficiency Optoelectronics...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a...

71

Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference  

DOE Patents [OSTI]

An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies are disclosed. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100`s THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 {micro}m to 1.66 {micro}m for fiber optics can be accomplished with a nearly continuous frequency coverage. 7 figs.

Georgiades, N.P.; Polzik, E.S.; Kimble, H.J.

1999-02-02T23:59:59.000Z

72

Photo-carrier radiometry of semiconductors: A novel powerful optoelectronic diffusion-wave technique for silicon process  

E-Print Network [OSTI]

Photo-carrier radiometry of semiconductors: A novel powerful optoelectronic diffusion-defect PCR images thus obtained prove that very-near-surface (where optoelectronic device fabrication takes

Mandelis, Andreas

73

Indirect excitons in GaAs coupled quantum wells : development of optoelectronic logic devices and trapping potentials, and studies of low temperature phenomena in a bosonic condensed matter system  

E-Print Network [OSTI]

the develop- ment of optoelectronics but also in the studiesof exciton based optoelectronics, that of scalability, willin exciton-based optoelectronics have been made. This

High, Alexander Arthur; High, Alexander Arthur

2012-01-01T23:59:59.000Z

74

High density Integrated Optoelectronic Circuits for High Speed Photonic Microsystems  

E-Print Network [OSTI]

High density Integrated Optoelectronic Circuits for High Speed Photonic Microsystems K. Minoglou.minoglou@imel.demorkitos.gr Abstract. The study of high density integrated optoelectronic circuits involves the development of hybrid integration technologies and the generation of models for the optoelectronic devices. To meet these goals

Kouroupetroglou, Georgios

75

Enhancing the Electrical and Optoelectronic Performance of Nanobelt  

E-Print Network [OSTI]

Enhancing the Electrical and Optoelectronic Performance of Nanobelt Devices by Molecular Surface) with a thin self-assembled molecular layer, the electrical and optoelectronic performances of a single NB-assembled thin molecular layer on a surface for improving the electrical and optoelectronic performances of NWs

Wang, Zhong L.

76

Graphenesilicon optoelectronics AUGUST 2012 VOL 6 NO 8  

E-Print Network [OSTI]

Graphene­silicon optoelectronics AUGUST 2012 VOL 6 NO 8 www.nature.com/naturephotonics X-RAY FREE;Regenerative oscillation and four-wave mixing in graphene optoelectronics T. Gu1 *, N. Petrone2 , J. F. Mc consecutive first observations in graphene­ silicon hybrid optoelectronic devices--ultralow-power resonant

Hone, James

77

Regenerative oscillation and four-wave mixing in graphene optoelectronics  

E-Print Network [OSTI]

Regenerative oscillation and four-wave mixing in graphene optoelectronics T. Gu1 *, N. Petrone2 , J consecutive first observations in graphene­ silicon hybrid optoelectronic devices--ultralow-power resonant optoelectronics and all-optical signal processing. S ubwavelength nanostructures in monolithic material platforms

Hone, James

78

Scalable Optoelectronic ATM Networks: The iPOINT Fully Functional Testbed  

E-Print Network [OSTI]

Scalable Optoelectronic ATM Networks: The iPOINT Fully Functional Testbed J. W. Lockwood, H. Duan validates the design of a 128 Gb s optoelectronic ATM switch. Optoelectronics, rather than all optical that maximizes the utility of photonic, electronic, and optoelectronic devices while simultaneously satisfying

Lockwood, John W.

79

Applied Optoelectronics | Open Energy Information  

Open Energy Info (EERE)

Optoelectronics Jump to: navigation, search Name: Applied Optoelectronics Place: Sugar Land, Texas Zip: 77478 Product: Applied Optoelectronics designs, develops, and manufactures...

80

Nanotube Optoelectronic Memory Alexander Star,*, Yu Lu, Keith Bradley, and George Gru1ner  

E-Print Network [OSTI]

Nanotube Optoelectronic Memory Devices Alexander Star,*, Yu Lu, Keith Bradley, and George Gru1ner to fabricate an optoelectronic memory device. Electric charges are created upon optical illumination the fabrication and study of carbon nanotube optoelectronic memory devices. This functional assembly combines

Gruner, George

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Fig. 1: Schematic of the optoelectronic switch. Source/drain and channel regions formed in Si.  

E-Print Network [OSTI]

Si Ge E-field Fig. 1: Schematic of the optoelectronic switch. Source/drain and channel regions (z) energy Novel Si-based CMOS Optoelectronic Switching Device Operating in the Near Infrared Ali K, high performance optoelectronic switch is introduced. The device is a Si- MOSFET with Ge gate that can

Miller, David A. B.

82

16:332:591:01 Optoelectronics I Instructor: Dr. Wei Jiang  

E-Print Network [OSTI]

16:332:591:01 Optoelectronics I Fall 2010 Instructor: Dr. Wei Jiang Time: T.Th 6:40pm-8:00pm Bhattacharya, Semiconductor Optoelectronic Devices, Prentice Hall; 2nd edition (1996), ISBN 0134956567. Amnon://www.ece.rutgers.edu/~wjiangnj Note: this course will be collocated with 14:332:466 Optoelectronic Devices #12;

Jiang, Wei

83

Correlating Microstructure and Optoelectronic Performance of Carbon-Based Nanomaterials  

E-Print Network [OSTI]

for these nanostructures, but despite the promise many carbon nanostructure-based optoelectronic devices fail to compete with their conventional counterparts. This is often due in large part to a non-optimized material or device microstructure. Factors...

Rochford, Caitlin

2012-08-31T23:59:59.000Z

84

Read/write head for a magnetic tape device having grooves for reducing tape floating  

DOE Patents [OSTI]

A read/write head for a magnetic tape includes an elongated chip assembly and a tape running surface formed in the longitudinal direction of the chip assembly. A pair of substantially spaced parallel read/write gap lines for supporting read/write elements extend longitudinally along the tape running surface of the chip assembly. Also, at least one groove is formed on the tape running surface on both sides of each of the read/write gap lines and extends substantially parallel to the read/write gap lines.

Aoki, Kenji (Kawasaki, JP)

2005-08-09T23:59:59.000Z

85

Millimeter-wave InP HEMT Optoelectronic Mixers Chang-Soon Choi1  

E-Print Network [OSTI]

Millimeter-wave InP HEMT Optoelectronic Mixers Chang-Soon Choi1 , Hyo-Soon Kang1 , Dae-Hyun Kim2-741, Korea Abstract -- Device characteristics of millimeter-wave optoelectronic mixers based on InP HEMTs are investigated in detail. InP HEMT optoelectronic mixers simultaneously perform photodetection with high internal

Choi, Woo-Young

86

PUBLISHED ONLINE: 17 OCTOBER 2010 | DOI: 10.1038/NMAT2879 Waterproof AlInGaP optoelectronics on  

E-Print Network [OSTI]

InGaP optoelectronics on stretchable substrates with applications in biomedicine and robotics Rak-Hwan Kim1 , Dae opportunities for optoelectronic devices. A ll established forms of inorganic light-emitting diodes (LEDs restricting the ways in which these devices can be used. Research in organic optoelectronic materials

Rogers, John A.

87

Characteristics of InP HEMT Harmonic Optoelectronic Mixers and Their Application to 60GHz Radio-on-Fiber Systems  

E-Print Network [OSTI]

. #12;Characteristics of InP HEMT Harmonic Optoelectronic Mixers and Their Application to 60GHz device characteristics of InP HEMT as a harmonic optoelectronic mixer. A single InP HEMT device performs is successfully demonstrated using InP HEMT harmonic optoelectronic mixer. Index Terms -- millimeter-wave, radio

Choi, Woo-Young

88

Approved Module Information for EE3OEL, 2014/5 Module Title/Name: Optoelectronics Module Code: EE3OEL  

E-Print Network [OSTI]

Approved Module Information for EE3OEL, 2014/5 Module Title/Name: Optoelectronics Module Code: EE3: * To provide a broad overview of updated optoelectronic principles, devices and applications. The students optoelectronic devices and their important functions for applications in optical communication, signal processing

Neirotti, Juan Pablo

89

Design and synthesis of nanocrystal heterostructures for optoelectronic applications  

E-Print Network [OSTI]

Colloidal semiconductor nanocrystals can be used for a variety of optoelectronic applications including light emitting devices (LEDs) and photovoltaics. Their narrow emission spectra make them excellent fluorophors for use ...

Halpert, Jonathan E

2008-01-01T23:59:59.000Z

90

Marcel Filoche Seminar: Modeling and Designing Micro-Optoelectronic...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Marcel Filoche Seminar: Modeling and Designing Micro-Optoelectronic Devices in the Real World: The Role of Disorder Apr 15, 2014 | 4:00 PM - 5:00 PM Marcel Filoche Researcher at...

91

High Density Concurrent Access Opto-Electronic VLSI Memory  

Science Journals Connector (OSTI)

In this paper we show how opto-electronic VLSI smart pixels (OE-VLSI) and free space interconnections can be used to implement a parallel access optical memory device that combines...

Lukowicz, Paul

92

Compact surface plasmon resonance imaging sensing system based on general optoelectronic components  

Science Journals Connector (OSTI)

We present a simple surface plasmon resonance imaging (SPRi) sensing system based on some common optoelectronic devices in this paper. Using an optical fiber based SPR sensor as...

Peng, Wei; Liu, Yun; Fang, Peng; Liu, Xiuxin; Gong, Zhenfeng; Wang, Hanqi; Cheng, Fang

2014-01-01T23:59:59.000Z

93

Optoelectronics of 2D Materials | MIT-Harvard Center for Excitonics  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

University of Washington focuses on creation, control, and understanding of novel optoelectronic devices based on two-dimensional quantum materials. Selected awards include DAPRA...

94

Thin Film Coolers for Localized Temperature Control in Optoelectronic Integrated Circuits Yan Zhang. James Cliristofferson, Danoosh Vaslkiee. Phuong Nguyen. Ali Shakouri  

E-Print Network [OSTI]

Thin Film Coolers for Localized Temperature Control in Optoelectronic Integrated Circuits Yan Zhang-sensitive properties of optoelectronic are constraints for high frequency high power operation. and for high level, optoelectronic. transient, integration Introduction 1. Thermal Issue in Optoelectronic Devices The on

95

Nano-Optoelectronic Integration on Silicon  

E-Print Network [OSTI]

implementing practical optoelectronics beyond the researchthat the future of nano-optoelectronics is more than just anthe possibility of using optoelectronics for retinal

Chen, Roger

2012-01-01T23:59:59.000Z

96

Metallic nanostructures for optoelectronic and photovoltaic applications  

E-Print Network [OSTI]

in photonics, optoelectronics and energy conversion. In thisrise to the fields of optoelectronics and photonics. Thelead to applications in optoelectronics, optics and energy

Lim, Swee Hoe

2009-01-01T23:59:59.000Z

97

Organic photosensitive devices  

DOE Patents [OSTI]

The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photosensitive optoelectronic devices having a photoactive organic region containing encapsulated nanoparticles that exhibit plasmon resonances. An enhancement of the incident optical field is achieved via surface plasmon polariton resonances. This enhancement increases the absorption of incident light, leading to a more efficient device.

Rand, Barry P; Forrest, Stephen R

2013-11-26T23:59:59.000Z

98

Device-independent quantum reading and noise-assisted quantum transmitters  

E-Print Network [OSTI]

In quantum reading, a quantum state of light (transmitter) is applied to read classical information. In the presence of noise or for sufficiently weak signals, quantum reading can outperform classical reading by enhanced state distinguishability. Here we show that the enhanced quantum efficiency depends on the presence in the transmitter of a particular type of quantum correlations, the discord of response. Different encodings and transmitters give rise to different levels of efficiency. Considering noisy quantum probes we show that squeezed thermal transmitters with non-symmetrically distributed noise among the field modes yield a higher quantum efficiency compared to coherent thermal quantum states. The noise-enhanced quantum advantage is a consequence of the discord of response being a non-decreasing function of increasing thermal noise under constant squeezing, a behavior that leads to an increased state distinguishability. We finally show that, for non-symmetric squeezed thermal states, the probability of error, as measured by the quantum Chernoff bound, vanishes asymptotically with increasing local thermal noise at finite global squeezing. Therefore, at fixed finite squeezing, noisy but strongly discordant quantum states with large noise imbalance between the field modes can outperform noisy classical resources as well as pure entangled transmitters with the same finite level of squeezing.

Wojciech Roga; Daniela Buono; Fabrizio Illuminati

2014-12-22T23:59:59.000Z

99

PHYSICAL REVIEW E 83, 026107 (2011) Scaling behavior of oscillations arising in delay-coupled optoelectronic oscillators  

E-Print Network [OSTI]

-coupled optoelectronic oscillators Lucas Illing,* Greg Hoth, Lauren Shareshian, and Christopher May Department of Physics-coupled nonlinear systems. Our experiment consists of two wide-band optoelectronic devices that are cross lasers with optical [6,7,14] and optoelectronic [8] coupling, fiber-ring lasers with optical coupling [12

Illing, Lucas

100

Optical scattering noise in high Q fiber ring resonators and its effect on optoelectronic oscillator phase noise  

E-Print Network [OSTI]

Optical scattering noise in high Q fiber ring resonators and its effect on optoelectronic is used as the frequency reference device in an optoelectronic oscillator (OEO), it has been found using optical delay lines and the optoelectronic oscillator (OEO) approach [1]. Although delay line

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

DeviceRequirementsforOptical Interconnects to Silicon Chips  

E-Print Network [OSTI]

-low-energy optoelectronic devices and novel compact optics will be needed. By David A. B. Miller, Fellow IEEE ABSTRACT | We some conclusions from these energy and density arguments for optoelectronic devices and systems. We

Miller, David A. B.

102

Modeling and fabrication of electrically tunable quantum dot intersubband devices  

E-Print Network [OSTI]

to their excel- lent electrical, optical, and mechanical properties.1 The progress on CNT optoelectronic devices and simulators have been developed to un- derstand the operation of CNT optoelectronic devices.8 It has been

Mohseni, Hooman

103

Dynamic cell and microparticle control via optoelectronic tweezers  

E-Print Network [OSTI]

24]. In contrast, optoelectronics tweezers enable light-high-speed semiconductor optoelectronics, nanophotonics, and

2007-01-01T23:59:59.000Z

104

Iris Visoly-Fisher Molecular Optoelectronics  

E-Print Network [OSTI]

Iris Visoly-Fisher Molecular Optoelectronics Organic semiconductors are excellent candidates single molecules in order to develop better design criteria for photovoltaic energy conversion and opto-electronic

Vardi, Amichay

105

Conceptual design for an optoelectronic delay line J.P Fabre (1) , T Gys (1) , M. Primout(1) and L Van hamme(2)(*)  

E-Print Network [OSTI]

1019 Conceptual design for an optoelectronic delay line J.P Fabre (1) , T Gys (1) , M. Primout(1 and transmitted to subsequent optoelectronic devices for further processing. This small fraction is selected ( at 108 Hz ) optoelectronic images, our design requires an excellent time resolution within the delay

Paris-Sud XI, Université de

106

Optoelectronic sensitization of carbon nanotubes by CdTe nanocrystals B. Zebli,1 H. A. Vieyra,1 I. Carmeli,2 A. Hartschuh,3 J. P. Kotthaus,1 and A. W. Holleitner1,4,*  

E-Print Network [OSTI]

Optoelectronic sensitization of carbon nanotubes by CdTe nanocrystals B. Zebli,1 H. A. Vieyra,1 I optoelectronic devices.1­6 The functionalization of CNTs by chemical modifications holds interesting prospects suitable for optoelectronic devices such as solar cells.18 Here, we dem- onstrate that the photoconductance

Ludwig-Maximilians-Universität, München

107

Optoelectronic Reservoir Computing  

E-Print Network [OSTI]

Reservoir computing is a recently introduced, highly efficient bio-inspired approach for processing time dependent data. The basic scheme of reservoir computing consists of a non linear recurrent dynamical system coupled to a single input layer and a single output layer. Within these constraints many implementations are possible. Here we report an opto-electronic implementation of reservoir computing based on a recently proposed architecture consisting of a single non linear node and a delay line. Our implementation is sufficiently fast for real time information processing. We illustrate its performance on tasks of practical importance such as nonlinear channel equalization and speech recognition, and obtain results comparable to state of the art digital implementations.

Yvan Paquot; Franois Duport; Anteo Smerieri; Joni Dambre; Benjamin Schrauwen; Marc Haelterman; Serge Massar

2011-11-30T23:59:59.000Z

108

Title: Device Physics and Applications of Intersubband Transitions in Wide-Bandgap Nitride Semiconductors  

E-Print Network [OSTI]

interconnections are realized using integrated optoelectronic devices operating at wavelengths to which silicon silicon circuits. The thin film optoelectronic devices are bonded directly to the stacked layers. devices. These optoelectronic devices operate at wavelengths to which the silicon is transparent, thus

Van Veen, Barry D.

109

Light Management with Nanostructures for Optoelectronic Devices  

Science Journals Connector (OSTI)

Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China ... It is worth pointing out that due to the different application scale requirement, low-cost approaches are desired for effective light management in PV applications. ... Here, we demonstrate a new approach to light management by forming whispering-gallery resonant modes inside a spherical nanoshell structure. ...

Siu-Fung Leung; Qianpeng Zhang; Fei Xiu; Dongliang Yu; Johnny C. Ho; Dongdong Li; Zhiyong Fan

2014-04-03T23:59:59.000Z

110

Superlattice microrefrigerators fusion bonded with optoelectronic devices  

E-Print Network [OSTI]

N. Chand, Monolithically peltier-cooled vertically-cavityproperties of a Peltier cooled laser structure, Ph.D.Sequeira, Monolithically peltier- cooled laser diodes, J.

Zhang, Y; Zeng, G H; Piprek, J; Bar-Cohen, A; Shakouri, A

2005-01-01T23:59:59.000Z

111

Superlattice microrefrigerators fusion bonded with optoelectronic devices  

E-Print Network [OSTI]

and J. E. Bowers, High cooling power density SiGe/Si microthe maximum cooling and cooling power densities (CPDs) formicrorefrigerator, mA. Cooling power, W. Percentage of Joule

Zhang, Y; Zeng, G H; Piprek, J; Bar-Cohen, A; Shakouri, A

2005-01-01T23:59:59.000Z

112

Publish date: 06/27/2011 ECE 4314: Solid State Devices  

E-Print Network [OSTI]

the operation of MOSFETs. 5. Describe the fundamentals of optoelectronic devices. Student outcomes addressed: a Bipolar junction transistors­ 7 hours Field-effect transistors and IC ­ 12 hours Optoelectronic devices

Gelfond, Michael

113

Fundamental Characteristics of Semiconductor Nanowires for Intersubband Optoelectronics  

E-Print Network [OSTI]

nanowires for intraband optoelectronics. First steps includefor Intersubband Optoelectronics A thesis submitted inNanowires for Intersubband Optoelectronics by Benjamin Adams

Burnett, Benjamin Adams

2012-01-01T23:59:59.000Z

114

Optical Signal Processing Devices  

Science Journals Connector (OSTI)

In the previous chapters we have presented advanced optoelectronic devices which performed a specific task: generation of coherent radiation, modulation, light detection or multi/demultiplexing. In this chapte...

Professor Daniela Dragoman; Professor Mircea Dragoman

1999-01-01T23:59:59.000Z

115

Multimaterial rectifying device fibers  

E-Print Network [OSTI]

Electronic and optoelectronic device processing is commonly thought to be incompatible with much simpler thermal drawing techniques used in optical fiber production. The incorporation of metals, polymer insulators, and ...

Orf, Nicholas D

2009-01-01T23:59:59.000Z

116

Optoelectronic fiber interface design  

E-Print Network [OSTI]

Recent developments in materials science have led to the development of an exciting, new class of fibers which integrate metals, semiconductors and insulators in the same codrawing process. Various electrical devices have ...

Spencer, Matthew Edmund

2008-01-01T23:59:59.000Z

117

Spatially Resolved Optoelectronics in Lead Sulfide Nanowires Yiming Yang, Xingyue Peng, and Dong Yu  

E-Print Network [OSTI]

to the development and optimization of optoelectronic devices such as solar cells and photodetectors. Comparing solar energy devices and lasers. Therefore, it is 10.1149/05808.0087ecst ©The Electrochemical Society Synthesis and Device Fabrication PbS NWs were synthesized by a CVD method in a tube furnace. PbCl2 (99

Yu, Dong

118

Center for Optoelectronics and Photonics PaderbornCenter for Optoelectronics and Photonics Paderborn GraduateGraduate ProgramProgram  

E-Print Network [OSTI]

Center for Optoelectronics and Photonics PaderbornCenter for Optoelectronics and Photonics in Optoelectronics and PhotonicsOptoelectronics and Photonics Waveguide-Coupled SiON-Microresonators(Project B3) Prof

Noé, Reinhold

119

Optoelectronics Lab #0 Saftey Laser Safety  

E-Print Network [OSTI]

Optoelectronics Lab #0 Saftey Laser Safety 7.0 Laser Hazard Analysis Before appropriate controls directly for an extended period (greater than 1000 seconds). Page 1 #12;Optoelectronics Lab #0 Saftey 3

Collins, Gary S.

120

16:332:592 Optoelectronics II Contemporary Topics in Optoelectronics/Photonics  

E-Print Network [OSTI]

16:332:592 Optoelectronics II Contemporary Topics in Optoelectronics/Photonics Spring 2008, and semiconductor physics or solid state electronics or optoelectronics I (please contact the instructor if you in optoelectronics and photonics. Three topics for this year: (1) Photonic crystals: basic physics, fabrication

Jiang, Wei

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We encourage you to perform a real-time search of NLEBeta
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121

Optoelectronics 514 Transmission Hologram Transmission Hologram  

E-Print Network [OSTI]

Optoelectronics 514 Transmission Hologram Transmission Hologram Purpose: To learn about making Procedure: 1. HeNe Laser: #12;Optoelectronics 514 Transmission Hologram Mount the laser along the long axis. Development #12;Optoelectronics 514 Transmission Hologram Put the plate in the developer emulsion side up

Collins, Gary S.

122

ANALYSIS AND IMPLEMENTATION OF OPTOELECTRONIC NETWORK ROUTERS  

E-Print Network [OSTI]

ANALYSIS AND IMPLEMENTATION OF OPTOELECTRONIC NETWORK ROUTERS By Mongkol Raksapatcharawong and around the U.S. for their constant support. #12;iv Abstract Network routers based on optoelectronic in multiprocessor systems. By combining high-bandwidth optoelectronic I/O technology and high- performance CMOS

Pinkston, Timothy M.

123

E-Print Network 3.0 - assist device e-type Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solid State Electronic Devices Course Mechanics Instructor: Prof. Seong... and optoelectronic devices. Topics include electrical properties of semiconductors, p-n junctions,...

124

E-Print Network 3.0 - assist device alvad Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solid State Electronic Devices Course Mechanics Instructor: Prof. Seong... and optoelectronic devices. Topics include electrical properties of semiconductors, p-n junctions,...

125

E-Print Network 3.0 - administration investigational device Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solid State Electronic Devices Course Mechanics Instructor: Prof. Seong... and optoelectronic devices. Topics include electrical properties of semiconductors, p-n ... Source:...

126

E-Print Network 3.0 - assist device support Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solid State Electronic Devices Course Mechanics Instructor: Prof. Seong... and optoelectronic devices. Topics include electrical properties of semiconductors, p-n junctions,...

127

E-Print Network 3.0 - act devices Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solid State Electronic Devices Course Mechanics Instructor: Prof. Seong... and optoelectronic devices. Topics include electrical properties of semiconductors, p-n junctions,...

128

Integrated NEMS and optoelectronics for sensor applications.  

SciTech Connect (OSTI)

This work utilized advanced engineering in several fields to find solutions to the challenges presented by the integration of MEMS/NEMS with optoelectronics to realize a compact sensor system, comprised of a microfabricated sensor, VCSEL, and photodiode. By utilizing microfabrication techniques in the realization of the MEMS/NEMS component, the VCSEL and the photodiode, the system would be small in size and require less power than a macro-sized component. The work focused on two technologies, accelerometers and microphones, leveraged from other LDRD programs. The first technology was the nano-g accelerometer using a nanophotonic motion detection system (67023). This accelerometer had measured sensitivity of approximately 10 nano-g. The Integrated NEMS and optoelectronics LDRD supported the nano-g accelerometer LDRD by providing advanced designs for the accelerometers, packaging, and a detection scheme to encapsulate the accelerometer, furthering the testing capabilities beyond bench-top tests. A fully packaged and tested die was never realized, but significant packaging issues were addressed and many resolved. The second technology supported by this work was the ultrasensitive directional microphone arrays for military operations in urban terrain and future combat systems (93518). This application utilized a diffraction-based sensing technique with different optical component placement and a different detection scheme from the nano-g accelerometer. The Integrated NEMS LDRD supported the microphone array LDRD by providing custom designs, VCSELs, and measurement techniques to accelerometers that were fabricated from the same operational principles as the microphones, but contain proof masses for acceleration transduction. These devices were packaged at the end of the work.

Czaplewski, David A.; Serkland, Darwin Keith; Olsson, Roy H., III; Bogart, Gregory R. (Symphony Acoustics, Rio Rancho, NM); Krishnamoorthy, Uma; Warren, Mial E.; Carr, Dustin Wade (Symphony Acoustics, Rio Rancho, NM); Okandan, Murat; Peterson, Kenneth Allen

2008-01-01T23:59:59.000Z

129

Excitons in Highly Efficient Organic Devices | MIT-Harvard Center...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

with conjugated electron system are currently intensively investigated for optoelectronic applications. This interest is spurred by novel devices such as organic...

130

Nitride semiconductor Surface and interface characterization and device design  

E-Print Network [OSTI]

barrier, q is the fundamental electronic charge, m e is theof the fundamental building blocks for electronic devices.the fundamental physics and the opto-electronic operations

Zhang, Hongtao

2006-01-01T23:59:59.000Z

131

Nano electro-mechanical optoelectronic tunable VCSEL  

Science Journals Connector (OSTI)

We report a novel electrostatic actuated nano-electromechanical optoelectronic (NEMO) tunable vertical-cavity surface-emitting laser (VCSEL) centered at 850 nm. By integrating a...

Huang, Michael C Y; Zhou, Ye; Chang-Hasnain, Connie J

2007-01-01T23:59:59.000Z

132

APPLIED PHYSICS REVIEWS Semi-insulating semiconductor heterostructures: Optoelectronic  

E-Print Network [OSTI]

APPLIED PHYSICS REVIEWS Semi-insulating semiconductor heterostructures: Optoelectronic properties of optoelectronic properties of and uses for semi-insulating semiconductor heterostructures and thin films. The principal optical and optoelectronic properties of semi-insulating epilayers and heterostructures

Nolte, David D.

133

Optoelectronic switches based on diffusive conduction Hilmi Volkan Demira  

E-Print Network [OSTI]

Optoelectronic switches based on diffusive conduction Hilmi Volkan Demira and Fatih Hakan Koklu the process of diffusive conduction that we use in our optoelectronic switches to achieve rapid optical. We demonstrate the feasibility of using such diffusive conductive optoelectronic switches

Miller, David A. B.

134

Stochastic artificial retinas: algorithm, optoelectronic circuits, and implementation  

E-Print Network [OSTI]

Stochastic artificial retinas: algorithm, optoelectronic circuits, and implementation Philippe tasks in the presence of discontinuities, dedicated optoelectronic hardware to implement thermal motion by photodetection of speckles, and hybrid architectures that combine optoelectronic, asynchronous

Boyer, Edmond

135

Tuning Electrical and Optoelectronic Properties of Single Cadmium Telluride Nanoribbon  

E-Print Network [OSTI]

Tuning Electrical and Optoelectronic Properties of Single Cadmium Telluride Nanoribbon Maxwell C.e., electrical resistivity and field-effect transistor (FET) mobility) and optoelectronic property (photocurrent, and magnetic properties with potential application in nanoscale electronic, optoelectronic, spintronics

Chen, Wilfred

136

Title of dissertation: SYNCHRONIZATION OF CHAOTIC OPTOELECTRONIC OSCILLATORS  

E-Print Network [OSTI]

ABSTRACT Title of dissertation: SYNCHRONIZATION OF CHAOTIC OPTOELECTRONIC OSCILLATORS: ADAPTIVE channels. Here, using a fiber-optic network of chaotic optoelectronic oscillators, we experimentally on synchronization. Through measurements of the convergence rate to synchronization in networks of optoelectronic

Anlage, Steven

137

A study of InP nanowires : growth, material properties, and application in optoelectronics  

E-Print Network [OSTI]

and Application in Optoelectronics A dissertation submittedand Application in Optoelectronics by Clint Joseph Novotny

Novotny, Clint Joseph

2007-01-01T23:59:59.000Z

138

MTL ANNUAL RESEARCH REPORT 2014 Photonics 99 Photonics, Optoelectronics  

E-Print Network [OSTI]

MTL ANNUAL RESEARCH REPORT 2014 Photonics 99 Photonics, Optoelectronics Generating Optical Orbital................................................................................................................................................118 Optoelectronics Based on Monolayer WSe2 p-n Diodes

Reif, Rafael

139

Shanghai Soban Optoelectronics Co Ltd | Open Energy Information  

Open Energy Info (EERE)

Soban Optoelectronics Co Ltd Jump to: navigation, search Name: Shanghai Soban Optoelectronics Co Ltd Place: Zhejiang Province, China Zip: 315300 Sector: Solar Product: A company...

140

Mobile Continuous Reading This research focuses on mobile continuous reading  

E-Print Network [OSTI]

listening and the combination of both, all while reading content on a mobile device. We use web pages users. Four conditions were investigated in the study: visual-reading, audio-listening, manual, Measurement Introduction The mobile device is used with a short attention span and users are likely to switch

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Opto-Electronics in Large Array Gas Detector Systems  

E-Print Network [OSTI]

Large array gas detector systems are used in particle and nuclear physics experiments involving high-energy nucleon-nucleon and heavy-ion collisions. We have observed that in large array gas detector systems the momentary discharges inside the detector cells result in slowdown of High Voltage conditioning and possible hindrances in signal processing. We have explored the opto-electronic devices like the opto-coupler, optical fibre and signal processing circuit, which provide successful monitoring procedures and preventive measures to overcome the challenges produced in such complex detector systems.

Majumdar, M R D; Nayak, T K; Das, Debasish; Nayak, Tapan K.

2005-01-01T23:59:59.000Z

142

Broadband chaos generated by an opto-electronic oscillator  

E-Print Network [OSTI]

We study an opto-electronic time-delay oscillator that displays high-speed chaotic behavior with a flat, broad power spectrum. The chaotic state coexists with a linearly-stable fixed point, which, when subjected to a finite-amplitude perturbation, loses stability initially via a periodic train of ultrafast pulses. We derive an approximate map that does an excellent job of capturing the observed instability. The oscillator provides a simple device for fundamental studies of time-delay dynamical systems and can be used as a building block for ultra-wide-band sensor networks.

Kristine E. Callan; Lucas Illing; Zheng Gao; Daniel J. Gauthier; Eckehard Schll

2009-01-26T23:59:59.000Z

143

Thermal analysis of injectable, cellular-scale optoelectronics with pulsed power  

Science Journals Connector (OSTI)

...analysis|optoelectronics|light-emitting diode|scaling law| 1. Introduction...analysis for a single inorganic light-emitting diode in the tissue In the device...Thermal analysis for inorganic light-emitting diode arrays in the tissue The results...

2013-01-01T23:59:59.000Z

144

Optoelectronic Multi-Chip Module Demonstrator System Jason D. Bakos  

E-Print Network [OSTI]

Optoelectronic Multi-Chip Module Demonstrator System Jason D. Bakos Department of Computer Science of Pittsburgh don@ee.pitt.edu Abstract Much research has been conducted in the area of optoelectronic optoelectronic chip-to-chip interconnection, or "optoelectronic multi-chip modules" (OE-MCM's). Most current

Bakos, Jason D.

145

Schematic Design of a Hybrid STM/SNOM forSchematic Design of a Hybrid STM/SNOM for Spintronics & OptoelectronicsSpintronics & Optoelectronics the Interiorthe Interior  

E-Print Network [OSTI]

& OptoelectronicsSpintronics & Optoelectronics ­­ the Interiorthe Interior The z-stage of the STM head w

Yeh, Nai-Chang

146

Optoelectronic fiber webs for imaging applications  

E-Print Network [OSTI]

We demonstrate the use of novel visible and infrared light-sensitive optoelectronic fiber in the development of large scale photodector arrays. Unlike conventional point photodetectors these one-dimensional linear photodectors ...

Arnold, Jerimy Reeves

2005-01-01T23:59:59.000Z

147

Organic LEDs for optoelectronic neural networks  

E-Print Network [OSTI]

In this thesis, I investigate the characteristics of Organic Light Emitting Diodes (OLEDs) and assess their suitability for use in the Compact Optoelectronic Integrated Neural (COIN) coprocessor. The COIN coprocessor, a ...

Mars, Risha R

2012-01-01T23:59:59.000Z

148

A single power supply optoelectronic differential amplifier  

E-Print Network [OSTI]

A SINGLE POWER SUPPLY OPTOELECTRONIC DIFFERENTIAL AMPLIFIER A Thesis by YOUNGiXIIN ALBERT CHOI Submitted to the Graduate College of Texas A&M University in partial fulfillment of the requirement for the degree of MASTER OF SCIENCE December... 1987 Major Subject: Electrical Engineering A SINGLE POWER SUPPLY OPTOELECTRONIC DIFFERENTIAL AMPLIFIER A Thesis by YOUNGMIN ALBERT CHOI Approved a. s to style and content by: He y F. aylor (Chairman of Committee) Kai Chang (Member) Ohannes...

Choi, Youngmin Albert

1987-01-01T23:59:59.000Z

149

Transparent heat-spreader for optoelectronic applications  

DOE Patents [OSTI]

An optoelectronic cooling system is equally applicable to an LED collimator or a photovoltaic solar concentrator. A transparent fluid conveys heat from the optoelectronic chip to a hollow cover over the system aperture. The cooling system can keep a solar concentrator chip at the same temperature as found for a one-sun flat-plate solar cell. Natural convection or forced circulation can operate to convey heat from the chip to the cover.

Minano, Juan Carlos; Benitez, Pablo

2014-11-04T23:59:59.000Z

150

Carbon Based Nano-Materials Research, Development and Applications in Optoelectronics  

E-Print Network [OSTI]

Nanotube Photonics and Optoelectronics. Nature Photonics 2,Nanotube Photonics and Optoelectronics. Nature Photonics 2,Nanotube Photonics and Optoelectronics. Nature Photonics 2,

Wang, Feihu

2012-01-01T23:59:59.000Z

151

Two-dimensional materials as a new platform for atomically thin electronics and optoelectronics  

E-Print Network [OSTI]

M. S. Electronics and optoelectronics of two-dimensionalGraphene photonics and optoelectronics. Nat. Photon. 4, 611M. S. Electronics and optoelectronics of two-dimensional

Cheng, Rui

2014-01-01T23:59:59.000Z

152

A Tunable Hemispherical Platform for Non-Stretching Curved Flexible Electronics and Optoelectronics  

E-Print Network [OSTI]

Flexible Electronics and Optoelectronics Jinda Zhuang and Y.flexible electronics or optoelectronics on curved surfacesflexible electronics and optoelectronics for a wide variety

Ju, Y. Sungtaek

2014-01-01T23:59:59.000Z

153

E-Print Network 3.0 - advanced photonic devices Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to flourish in the areas of high speed, high performance electronics and optoelectronic devices Source: Akhmedov, Azer - Department of Mathematics, University of...

154

E-Print Network 3.0 - advanced cmos devices Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: . Paniccia, "Advances in silicon photonic devices for silicon-based optoelectronic applications," Physica E... . Paniccia, "Development of CMOS-compatible integrated...

155

E-Print Network 3.0 - advanced device structures Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering 5 ECE 308 -Spring 2005 Physics and Models of Electronics and Optoelectronics Devices (3) Summary: ECE 308 - Spring 2005 Physics and Models of Electronics and...

156

E-Print Network 3.0 - assistive technology devices Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Computer Engineering (ECE) at Lehigh... bandgap III-Nitride semiconductor optoelectronics materials and devices. The position is available Source: Gilchrist, James F. -...

157

E-Print Network 3.0 - amplatz thrombectomy device Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Division Collection: Materials Science 86 Research Staff Openings in Organic Optoelectronic Devices Contact Person: Dr. Wallace C.H. Choy, Department of Electrical and Electronic...

158

Fundamental building blocks for a compact optoelectronic neural network processor  

E-Print Network [OSTI]

The focus of this thesis is interconnects within the Compact Optoelectronic Neural Network Processor. The goal of the Compact Optoelectronic Neural Network Processor Project (CONNPP) is to build a small, rugged neural ...

Ruedlinger, Benjamin Franklin, 1976-

2003-01-01T23:59:59.000Z

159

Communication using Synchronization of Chaos in Semiconductor Lasers with optoelectronic  

E-Print Network [OSTI]

Communication using Synchronization of Chaos in Semiconductor Lasers with optoelectronic feedback S. The Chaos in the single-mode semiconductor lasers is generated by means of an optoelectronic feedback with optoelectronic feedback has been demonstrated for quite slow data rates by using chaotic wavelength fluctuations

Illing, Lucas

160

Multistability in a semiconductor laser with optoelectronic feedback  

E-Print Network [OSTI]

Multistability in a semiconductor laser with optoelectronic feedback Guang-Qiong Xia1,2 , Sze with delayed optoelectronic feedback is observed experimentally. For a given delay time, the observed dynamical-oscillating semiconductor lasers subject to delayed optoelectronic mutual coupling," Phys. Rev. E 73, 047201-1-4 (2006) 8. G

Chan, Sze-Chun

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Title of dissertation: OPTOELECTRONIC EXPERIMENTS ON RANDOM BIT GENERATORS AND  

E-Print Network [OSTI]

ABSTRACT Title of dissertation: OPTOELECTRONIC EXPERIMENTS ON RANDOM BIT GENERATORS AND COUPLED: Professor Rajarshi Roy Department of Physics Optoelectronic systems have many important applications and optoelectronic systems have been of interest for two newer purposes: generators of random bits and experimental

Murphy, Thomas E.

162

Models and Algorithms for Optical and Optoelectronic Parallel Computers  

E-Print Network [OSTI]

Models and Algorithms for Optical and Optoelectronic Parallel Computers Sartaj Sahni Dept/Fremantle, Australia #12;realization leads to the concept of optoelectronic computers­computers which have a mix the prespective of efficient algorithm design. The OTIS family of optoelectronic computers is a step

Sahni, Sartaj K.

163

Noise properties of mutually sustained microwave-optoelectronic oscillator pair  

E-Print Network [OSTI]

Noise properties of mutually sustained microwave-optoelectronic oscillator pair E. Shumakher and G microwave-optoelectronic oscillator pair are described. The two oscillators have different spectral purities and exhibits low phase noise and highly suppressed spurious modes. Optoelectronic oscillators are employed

Eisenstein, Gadi

164

Absolute shape measurements using high-resolution optoelectronic holography methods  

E-Print Network [OSTI]

Absolute shape measurements using high- resolution optoelectronic holography methods Cosme Furlong optoelectronic holography (OEH) methodology is described. This description addresses apparatus and analysis-Optical Instrumentation Engineers. [S0091-3286(00)02601-5] Subject terms: CAD/CAE models; fiber optics; optoelectronic

Furlong, Cosme

165

Time-domain Dynamics and Stability Analysis of Optoelectronic Oscillators  

E-Print Network [OSTI]

Time-domain Dynamics and Stability Analysis of Optoelectronic Oscillators based on Whispering and Yanne K. Chembo Optoelectronic oscillators (OEOs) are microwave photonics systems in- tended to generate in "" #12;1 Introduction The optoelectronic oscillator (OEO) is nowadays considered as one of the most

Paris-Sud XI, Université de

166

Multicriteria Choice of the NVG Optoelectronic Channel Elements Daniela Borissova  

E-Print Network [OSTI]

6 1 Multicriteria Choice of the NVG Optoelectronic Channel Elements Daniela Borissova Institute of technological development and mass production. The process of the NVG design involves choice of optoelectronic elements must fulfill specific requirements of the NVG optoelectronic channel and it has to meet user

Borissova, Daniela

167

Spatially Resolved Ballistic Optoelectronic Transport Measured by Quantized  

E-Print Network [OSTI]

Spatially Resolved Ballistic Optoelectronic Transport Measured by Quantized Photocurrent of the electron modes in the QPC. KEYWORDS Ballistic optoelectronic quantum transport, nanoscale electronics Q to hundreds of nanometers have been detected. We find that a ballistic optoelectronic trans- port can occur

Ludwig-Maximilians-Universität, München

168

OPTI 626-Integrated Optics and Optoelectronics Course Description  

E-Print Network [OSTI]

OPTI 626- Integrated Optics and Optoelectronics Course Description: This course aims to give a broad understanding of the physics and technology of discrete and integrated optical and optoelectronic componenents. The main focus is on important optoelectronic components such as waveguides, lasers, detectors

Arizona, University of

169

Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications  

E-Print Network [OSTI]

Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications with material composition over a range of 0.7 to 5 eV. This factor allows them to be used for optoelectronic. Improvement in growth quality and doping of GaN is needed to improve the performance of optoelectronics

Li, Mo

170

Optoelectronic cooling of mechanical modes in a semiconductor nanomembrane  

E-Print Network [OSTI]

Optical cavity cooling of mechanical resonators has recently become a research frontier. The cooling has been realized with a metal-coated silicon microlever via photo-thermal force and subsequently with dielectric objects via radiation pressure. Here we report cavity cooling with a crystalline semiconductor membrane via a new mechanism, in which the cooling force arises from the interaction between the photo-induced electron-hole pairs and the mechanical modes through the deformation potential coupling. The optoelectronic mechanism is so efficient as to cool a mode down to 4 K from room temperature with just 50 uW of light and a cavity with a finesse of 10 consisting of a standard mirror and the sub-wavelength-thick semiconductor membrane itself. The laser-cooled narrow-band phonon bath realized with semiconductor mechanical resonators may open up a new avenue for photonics and spintronics devices.

K. Usami; A. Naesby; T. Bagci; B. Melholt Nielsen; J. Liu; S. Stobbe; P. Lodahl; E. S. Polzik

2010-11-22T23:59:59.000Z

171

Read More...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Publications and Presentations Galleries ESnet Awards and Honors ESnet Live Blog Home Engineering Services OSCARS Read More... Engineering Services The Network OSCARS How...

172

Optoelectronic switching of addressable molecular crossbar junctions  

E-Print Network [OSTI]

This letter reports on the observation of optoelectronic switching in addressable molecular crossbar junctions fabricated using polymer stamp-printing method. The active medium in the junction is a molecular self-assembled monolayer softly sandwiched between gold electrodes. The molecular junctions are investigated through currentvoltage measurements at varied temperature (from 95 to 300 K) in high vacuum condition. The junctions show reversible optoelectronic switching with the highest on/off ratio of 3 orders of magnitude at 95 K. The switching behavior is independent of both optical wavelength and molecular structure, while it strongly depends on the temperature. Initial analysis indicates that the distinct binding nature of the molecule/electrode interfaces play a dominant role in the switching performance.

J. C. Li

2006-11-22T23:59:59.000Z

173

332:466/591 Optoelectronics I Instructor: Wei Jiang  

E-Print Network [OSTI]

332:466/591 Optoelectronics I Instructor: Wei Jiang Sec. 1. Introduction #12;2 332:591 Optoelectronics I (W. Jiang) About Instructor · Dr. Wei Jiang · Room: EE 215 · Phone: (732) 445-2164 · Email: wjiangnj@rci.rutgers.edu #12;3 332:591 Optoelectronics I (W. Jiang) About this Course · Class Time: T,Th 6

Jiang, Wei

174

Assembly of opto-electronic module with improved heat sink  

DOE Patents [OSTI]

A heat sink for a transceiver optoelectronic module including dual direct heat paths and a structure which encloses a number of chips having a central web which electrically isolates transmitter and receiver chips from each other. A retainer for an optical coupler having a port into which epoxy is poured. An overmolded base for an optoelectronic module having epoxy flow controller members built thereon. Assembly methods for an optoelectronic module including gap setting and variation of a TAB bonding process.

Chan, Benson (Vestal, NY); Fortier, Paul Francis (Richelieu, CA); Freitag, Ladd William (Rochester, MN); Galli, Gary T. (Binghampton, NY); Guindon, Francois (Stukely-sud, CA); Johnson, Glen Walden (Yorktown Heights, NY); Letourneau, Martial (Granby, CA); Sherman, John H. (Lisle, NY); Tetreault, Real (Granby, CA)

2004-11-23T23:59:59.000Z

175

Multiplex Chaos Synchronization in Semiconductor Lasers with Multiple Optoelectronic Feedbacks  

E-Print Network [OSTI]

Secure chaos based multiplex communication system scheme is proposed utilizing globally coupled semiconductor lasers with multiple variable time delay optoelectronic feedbacks.

E. M. Shahverdiev; K. A. Shore

2011-11-06T23:59:59.000Z

176

ACTIVE SUBSTRATES FOR OPTOELECTRONIC INTERCONNECT Donald Chiarulli, Steven Levitan, Jason Bakos  

E-Print Network [OSTI]

ACTIVE SUBSTRATES FOR OPTOELECTRONIC INTERCONNECT Donald Chiarulli, Steven Levitan, Jason Bakos Semiconductor ABSTRACT We present the design of an intelligent optoelectronic chip carrier (IOCC the sapphire. The result is an optoelectronic package that supports full CMOS performance, is mechanically

Bakos, Jason D.

177

Dedicated optoelectronic stochastic parallel processor for real-time image processing: motion-detection  

E-Print Network [OSTI]

Dedicated optoelectronic stochastic parallel processor for real-time image processing: motion and performance analysis of a dedicated optoelectronic processor that implements stochastic optimization, providing compact, high-bandwidth intrachip optoelectronic interconnects. We have modeled the oper- ation

Paris-Sud XI, Université de

178

The WARRP Core: Optoelectronic Implementation of Network Router Deadlock Handling Mechanisms  

E-Print Network [OSTI]

1 The WARRP Core: Optoelectronic Implementation of Network Router Deadlock Handling Mechanisms. Keywords: adaptive routing, deadlock handling, multiprocessor network router, optoelectronic smart pixel. #12;2 1. Introduction Emerging optoelectronic smart-pixel technology is of increasing interest

Pinkston, Timothy M.

179

A High-Performance Optoelectronic Interconnect Router: Using Increased Bandwidth to Enable Latency Reduction  

E-Print Network [OSTI]

D R A FT 1 A High-Performance Optoelectronic Interconnect Router: Using Increased Bandwidth optoelectronic interconnection network router capable of supplying and efficiently utilizing higher bandwidth routing, interconnection network, latency hiding/reduction techniques, optoelectronic router. 1

Pinkston, Timothy M.

180

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Savoy, IL); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Urbana, IL)

2009-11-24T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2013-05-14T23:59:59.000Z

182

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2014-03-04T23:59:59.000Z

183

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Daejeon, KR); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Urbana, IL)

2011-07-19T23:59:59.000Z

184

Release strategies for making transferable semiconductor structures, devices and device components  

DOE Patents [OSTI]

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

2014-11-25T23:59:59.000Z

185

Hybrid Semiconductors for Hardier Electronics and Optoelectronics? |  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Unveiling the Molecular Structure of the Target of Many Drugs Unveiling the Molecular Structure of the Target of Many Drugs A New Scenario for First Life on Earth Surface Orbital 'Roughness' in Colossal Magnetoresistive Oxide Different Roads Toward Quantum Criticality Orbital Reconstruction at a Complex Oxide Interface Science Highlights Archives: 2013 | 2012 | 2011 | 2010 2009 | 2008 | 2007 | 2006 2005 | 2004 | 2003 | 2002 2001 | 2000 | 1998 | Subscribe to APS Science Highlights rss feed Hybrid Semiconductors for Hardier Electronics and Optoelectronics? DECEMBER 21, 2007 Bookmark and Share The crystal structure of β-ZnTe(en)0:5, determined by single-crystal x-ray diffraction. Two-monolayerthick ZnTe slabs are interconnected by ethylenediamine (C2N2H8) molecules bonded to zinc atoms. Zn-Green, Te-Red, N-Blue,and C-Gray. Hydrogen atoms are omitted for clarity.

186

CMOS/BiCMOS Optoelectronic Receiver High-Speed Circuits and Systems Lab 1  

E-Print Network [OSTI]

CMOS/BiCMOS Optoelectronic Receiver High-Speed Circuits and Systems Lab 1 Silicon-based optoelectronic Rx for optical interconnect applications Process Standard CMOS 0.13-m technology Data Up to 10-Gb Optoelectronic Receiver SiGe BiCMOS Optoelectronic Receiver Process Standard BiCMOS 0.25-m technology Data Up

Choi, Woo-Young

187

Additional Reading  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Reading Reading Cravotta, C. A. III and G. R. Watzlaf. 2002. Design and Performance of Limestone Drains to Increase pH and Remove Metals from Acidic Mine Drainage. Chapter 2, In Handbook of Groundwater Remediation Using Permeable Reactive Barriers. Elsevier Science (USA). Sams, J. I. III, Schroeder, K. T., Ackman, T. E., Crawford, J. K. and K. L. Otto 2001. Water-quality conditions during low flow in the Lower Youghiogheny River Basin, Pennsylvania, Oct 5-7, 1998. U.S. Geological Survey Water Resources Investigations Report 01-4189, 32p. Hammack, R. W., Veloski, G. A., Sams, J. I. III and J. S. Mabie. 2002. The use of airborne EM conductivity to locate contaminant flow paths at the Sulfur Bank Mercury Superfund Site. In Proceedings of the Symposium for Application of Geophysics to

188

Fabrication, Device Assembly, and Application of One-Dimensional Chalcogenides Nanostructures  

E-Print Network [OSTI]

membranes. Journal of Optoelectronics and Advanced Materialsnanoscale electronics, optoelectronics, photovoltaics, andin electronics, optoelectronics, photovoltaics, and sensors

Kum, Maxwell C.

2009-01-01T23:59:59.000Z

189

Metal oxide/organic interface investigations for photovoltaic devices  

E-Print Network [OSTI]

summarises work I have carried out as a PhD student of the Optoelectronics Group at Cavendish Laboratory of the University of Cambridge since October 2010. I am thankful to the Engineering and Physical Sciences Research Council and the A.G. Leventis... are often used in many other optoelectronic devices such as photovoltaics and light emitting diodes. Sufficiently conducting oxides with the appropriate electron affinities and ionisation potentials, can be employed as charge transport and injection layers...

Pachoumi, Olympia

2014-10-07T23:59:59.000Z

190

Technology Roadmap for the Japanese Opto-Electronics Industry  

Science Journals Connector (OSTI)

A technology roadmap for the opto-electronics industry for the ... estimation, we present a system and element technology roadmap for public and business optical-communications network technology Finally, it is e...

Michiharu Nakamura

1999-01-01T23:59:59.000Z

191

Optoelectronic and photonic control of single quantum dots  

E-Print Network [OSTI]

Optoelectronic and photonic control of single quantum dots Samuel James Dewhurst Wolfson College University of Cambridge A thesis submitted for the degree of Doctor of Philosophy April 2010 Declaration This thesis describes work carried out...

Dewhurst, Samuel James

2010-10-12T23:59:59.000Z

192

Micro-cleaved ridge lasers for optoelectronic integration on silicon  

E-Print Network [OSTI]

This thesis addresses one of the last hurdles to optoelectronic integration on silicon, namely the incorporation of room-temperature, electrically-pumped edge-emitting laser diodes. To this end, thin (-6 pm) InP-based ...

Rumpler, Joseph John, 1976-

2008-01-01T23:59:59.000Z

193

Fabrication and optimization of light emitting devices with core-shell quantum dots  

E-Print Network [OSTI]

Quantum dot light emitting devices (QD-LEDs) are promising options for the next generation of solid state lighting, color displays, and other optoelectronic applications. Overcoating quantum dots (QDs) -- semiconducting ...

Song, Katherine Wei

2013-01-01T23:59:59.000Z

194

Measurement and control of exciton spin in organic light emitting devices  

E-Print Network [OSTI]

Organic semiconductors are a promising new material set for electronic and optoelectronic devices. Their properties can be precisely controlled through chemistry, and they are well-suited for large-area, flexible, and ...

Segal, Michael, Ph. D. Massachusetts Institute of Technology

2007-01-01T23:59:59.000Z

195

Physics and simulation of transport processes in hybrid organic semiconductor devices  

E-Print Network [OSTI]

Organic semiconductors and nanomaterials promise to potentially form the basis for future efficient and cost-effective large area optoelectronic devices, such as lightemitting diodes and solar cells. Although these materials' ...

Rousseau, Ian Michael

2010-01-01T23:59:59.000Z

196

E-Print Network 3.0 - atmospheric rf device Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

results for: atmospheric rf device Page: << < 1 2 3 4 5 > >> 1 Packaging of Ka-Band Patch Antenna and Optoelectronic Components for Dual-Mode Indoor Wireless Communication...

197

188 IEEE TRANSACTIONS ON ULTRASONICS,FERROELECTRICS,AND FREQUENCYCONTROL. VOL. 42, NO. 2. MARCH 1995 Optoelectronic Transmitters for  

E-Print Network [OSTI]

1995 Optoelectronic Transmitters for Medical Ultrasound Transducers Charles D. Emery, Member, IEEE Abstract- Optoelectronics and fiber optics can be used to miniaturize and improve the flexibility the feasibility of applying optoelectronic technology to replace conventional electronic transmitter technology. I

Smith, Stephen

198

AquaLite Wuhan Di Yuan Optoelectronic | Open Energy Information  

Open Energy Info (EERE)

AquaLite Wuhan Di Yuan Optoelectronic AquaLite Wuhan Di Yuan Optoelectronic Jump to: navigation, search Name AquaLite (Wuhan Di Yuan Optoelectronic) Place Wuhan, Hubei Province, China Zip 430074 Product High-power and high-brightness LED manufacturer. Coordinates 30.572399°, 114.279121° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":30.572399,"lon":114.279121,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

199

142 IEEE TRANSACTIONS ON COMPUTERS, VOL. 46, NO. 2, FEBRUARY 1997 The Design of an Optoelectronic Arithmetic  

E-Print Network [OSTI]

142 IEEE TRANSACTIONS ON COMPUTERS, VOL. 46, NO. 2, FEBRUARY 1997 The Design of an Optoelectronic optoelectronic arithmetic units combining optical directional coupler switches and cyclic permutation networks

Oruc, A. Yavuz

200

Journal of Microwaves and Optoelectronics, Vol. 2, N.o 6, December 2002.  

E-Print Network [OSTI]

Journal of Microwaves and Optoelectronics, Vol. 2, N.o 6, December 2002. Copyright SBMO ISSN 1516 one metric is not #12;Journal of Microwaves and Optoelectronics, Vol. 2, N.o 6, December 2002

Coello, Carlos A. Coello

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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to obtain the most current and comprehensive results.


201

Journal of Microwaves and Optoelectronics, Vol. 2, N.o 6, December 2002.  

E-Print Network [OSTI]

Journal of Microwaves and Optoelectronics, Vol. 2, N.o 6, December 2002. Copyright SBMO ISSN 1516 investigation is subsequently #12;Journal of Microwaves and Optoelectronics, Vol. 2, N.o 6, December 2002

Coello, Carlos A. Coello

202

Examining the effect of additives and thicknesses of hole transport layer for efficient organic solar cell devices  

Science Journals Connector (OSTI)

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), a conducting polymer, has been receiving a great deal of attention for next generation optoelectronic organic devices. In this report, we discu...

Shizuyasu Ochiai; Palanisamy Kumar; Kannappan Santhakumar

2013-07-01T23:59:59.000Z

203

Analysis of free-space optical interconnects for the three-dimensional optoelectronic stacked processor  

E-Print Network [OSTI]

Analysis of free-space optical interconnects for the three-dimensional optoelectronic stacked of free-space optical interconnect for the three-dimensional optoelectronic stacked processor (3DOESP) has VLSI; Optoelectronics; VCSELs 1. Introduction Current electronic interconnection technology cannot keep

Esener, Sadik C.

204

2009 Macmillan Publishers Limited. All rights reserved. An optoelectronic nose for the detection of  

E-Print Network [OSTI]

© 2009 Macmillan Publishers Limited. All rights reserved. An optoelectronic nose for the detection observable response, specifically colour changes quantified by digital imaging. Such an `optoelectronic nose of odorants. Our optoelectronic nose uses a colorimetric sensor array (CSA) that largely overcomes

Suslick, Kenneth S.

205

336 Florida Entomologist 84(3) September 2001 AN OPTOELECTRONIC SENSOR FOR MONITORING  

E-Print Network [OSTI]

336 Florida Entomologist 84(3) September 2001 AN OPTOELECTRONIC SENSOR FOR MONITORING SMALL optoelectronic system for measuring rapid movements in one dimension, such as the protraction of an insect leg, optoelectronic photodetector, cricket acoustic startle response RESUMEN Detectores ópticos de movimiento han sido

Hoy, Ronald R.

206

Self-starting ultralow-jitter pulse source based on coupled optoelectronic oscillators with an  

E-Print Network [OSTI]

Self-starting ultralow-jitter pulse source based on coupled optoelectronic oscillators, 2004 A self-starting optical pulse source based on mutually coupled optoelectronic oscillators optoelectronic oscillator with an intracavity fiber parametric amplifier. It self-starts and exhibits 3 ps pulses

Eisenstein, Gadi

207

IEEE PHOTONICS TECHNOLOGY LETTERS 1 Remote Optoelectronic Frequency Down-Conversion  

E-Print Network [OSTI]

IEEE PHOTONICS TECHNOLOGY LETTERS 1 Remote Optoelectronic Frequency Down-Conversion Using 60-GHz Kim, Associate Member, IEEE Abstract--A new optoelectronic frequency down-conversion method for radio local oscillator signals. Using this optoelectronic frequency down-converter, an RoF uplink

Choi, Woo-Young

208

JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 17, NO. 8, AUGUST 1999 1423 HBT Optoelectronic Mixer at Microwave  

E-Print Network [OSTI]

JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 17, NO. 8, AUGUST 1999 1423 HBT Optoelectronic Mixer discussed for both large and small signal regimes. I. INTRODUCTION OPTOELECTRONIC mixing is potentiallyP/GaInAs heterojunction bipolar transistors (HBT's) containing an optical access to the base, as an optoelectronic mixer

Eisenstein, Gadi

209

Optoelectronic Multi-Chip Module Demonstrator System Jason D. Bakos1  

E-Print Network [OSTI]

Optoelectronic Multi-Chip Module Demonstrator System Jason D. Bakos1 , Donald Chiarulli1 , Steven P of an optoelectronic 3-chip OE- MCM that implements a 64-channel non-blocking fiber optic switch. Keywords: Optical.0250) Optoelectronics, (110.2350) Fiber optics imaging 1. Introduction In previously published work [1, 2, 3, 4, 5], we

Bakos, Jason D.

210

GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies  

E-Print Network [OSTI]

LETTERS GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies-frequency electronics3,4 and most forms of optoelectronics5,6 . However, growing large, high quality wafers implementation. More tractable, yet still difficult, problems appear in advanced electronics and optoelectronics

Rogers, John A.

211

Single-cycle radio-frequency pulse generation by an optoelectronic  

E-Print Network [OSTI]

Single-cycle radio-frequency pulse generation by an optoelectronic oscillator Etgar C. Levy,1-locking of an optoelectronic oscillator which generates a single-cycle radio-frequency pulse train. The measured pulse to pulse by a passive mode-locked oscillator. The passive mode-locked optoelectronic oscillator is important

Horowitz, Moshe

212

Center for Optoelectronics and Photonics Paderborn 2 | www.ceopp.de  

E-Print Network [OSTI]

Center for Optoelectronics and Photonics Paderborn 2009 2010 #12;2 | www.ceopp.de #12;www perceives itself as a research university. Optoelectronics and photonics are significant areas of research within our university. With the foundation of the central research facil- ity "Center for Optoelectronics

Noé, Reinhold

213

Development of the iPOINT Testbed for Optoelectronic Asynchronous Transfer Mode Networking  

E-Print Network [OSTI]

Development of the iPOINT Testbed for Optoelectronic Asynchronous Transfer Mode Networking Abstract. In conjunction of the UIUC microelectronics laboratory, low-cost optoelectronic components have been developed the integration of time-division multiplexors, ATM switches, optoelectronic components, and ber-optics. As shown

Lockwood, John W.

214

Simplified optoelectronic 3R regenerator using nonlinear electro-optical transformation in an  

E-Print Network [OSTI]

Simplified optoelectronic 3R regenerator using nonlinear electro-optical transformation: A simplified optoelectronic 3R regenerator without electrical signal processing is demonstrated by utilizing 80000 km dispersion shifted fibre using compact opto-electronic-3R regeneration," in Proc. European

Bowers, John

215

Center for Optoelectronics and Photonics Paderborn 2 | www.ceopp.de  

E-Print Network [OSTI]

Center for Optoelectronics and Photonics Paderborn 2012 2013 #12;2 | www.ceopp.de #12;www- born perceives itself as a research university. Optoelectronics and photonics are significant areas for Optoelectronics and Photonics Paderborn" (CeOPP) in the year 2006, the joint research activities in the fields

Noé, Reinhold

216

Comprehensive computational model of single-and dual-loop optoelectronic  

E-Print Network [OSTI]

Comprehensive computational model of single- and dual-loop optoelectronic oscillators describe a comprehensive computational model for single- loop and dual-loop optoelectronic oscillators amplifiers and oscillators; (230.0250) Optoelectronics; (230.4910) Oscillators. References and links 1. X. S

Horowitz, Moshe

217

Investigation in acousto-optic laser stabilization for crystal resonator based optoelectronic oscillators  

E-Print Network [OSTI]

1 Investigation in acousto-optic laser stabilization for crystal resonator based optoelectronic to stabilize a microwave signal generated by an optoelectronic oscillator (OEO). Bulk acoustic waves at two is operating for any resonator to be inserted into the optoelectronic oscillator with a Q factor in the range 2

Paris-Sud XI, Université de

218

OPTOELECTRONIC MULTI-CHIP MODULES D.CHIARULLI,S. LEVITAN,J. BAKOS  

E-Print Network [OSTI]

OPTOELECTRONIC MULTI-CHIP MODULES D.CHIARULLI,S. LEVITAN,J. BAKOS UNIVERSITY OF PITTSBURGH present a novel packaging architecture for Optoelectronic Multi-Chip-Modules (OEMCM) based on fiber image presents an alternative for next generation systems: 3D optoelectronic-multi-chip- modules (OE

Bakos, Jason D.

219

Electronic properties of 2D and 3D hybrid organic/inorganic perovskites for optoelectronic  

E-Print Network [OSTI]

Electronic properties of 2D and 3D hybrid organic/inorganic perovskites for optoelectronic, optoelectronic properties, photovoltaic, exciton 1. Introduction Over the past decade, Hybrid Organic/inorganic Perovskites (HOP) have attracted increasing interest in the field of optoelectronics (Mitzi et al. 1995

Paris-Sud XI, Université de

220

nD-RAPID: a multidimensional scalable fault-tolerant optoelectronic  

E-Print Network [OSTI]

nD-RAPID: a multidimensional scalable fault-tolerant optoelectronic interconnection for high of faults. We propose a multidimen- sional optoelectronic architecture, nD-RAPID (reconfigurable, and latency [4­7]. In this paper, we propose a novel optoelectronic architecture nD-RAPID (n Dimen- sional

Louri, Ahmed

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Design and construction of the high-speed optoelectronic memory system  

E-Print Network [OSTI]

Design and construction of the high-speed optoelectronic memory system demonstrator Roberto-speed optoelectronic memory system project is concerned with the reduction of latency within multiprocessor computer systems (a key problem) by the use of optoelectronics and associated packaging technologies. System

Jahns, Jürgen

222

Optical disk resonators with micro-wave free spectral range for optoelectronic oscillator  

E-Print Network [OSTI]

Optical disk resonators with micro-wave free spectral range for optoelectronic oscillator Herv to the resonator relaxation time = Q/ [2]. The optoelectronic delayed feed- back loop can thus oscillate at all. frequency selective resonator (e.g with a high Q factor). The detailed architecture is an optoelectronic

Paris-Sud XI, Université de

223

Spin and Charge Quantum Transport in Organic/Magnetic Heterostructures for Spintronics and Optoelectronic  

E-Print Network [OSTI]

and Optoelectronic This research project is one of the Seed Projects of the Caltech Center for Science to optimizing the spintronic and optoelectronic properties of organic semiconductor/ferromagnet heterostructures they are highly adaptable and exhibit interesting properties for optoelectronic applications.ii The weak spin

Yeh, Nai-Chang

224

Optoelectronic Oscillator Based on Fiber Ring Resonator: Overall System Optimization and Phase  

E-Print Network [OSTI]

Optoelectronic Oscillator Based on Fiber Ring Resonator: Overall System Optimization and Phase of an optoelectronic oscillator based on a passive fiber ring resonator. Our experimental results demonstrate existing oscillator of the same type, an active cavity based coupled optoelectronic oscillator. I

Paris-Sud XI, Université de

225

Optoelectronic Multi-Chip-Module Implementation of a 64-Channel Fiber Switch  

E-Print Network [OSTI]

Optoelectronic Multi-Chip-Module Implementation of a 64-Channel Fiber Switch Jason D. Bakos, Donald We present a demonstration prototype of an optoelectronic 3-chip OE-MCM module that implements a 64,2] we have proposed a novel design for optoelectronic multi-chip-modules (OE-MCM) based on small

Bakos, Jason D.

226

Integrated Optoelectronics in an Optical Fiber J. V. Badding*a,d  

E-Print Network [OSTI]

Integrated Optoelectronics in an Optical Fiber J. V. Badding*a,d , P. J. Saziob , V. Gopalanc.d , A,d , a Department of Chemistry, Pennsylvania State University, University Park, PA, USA 16802; b Optoelectronics optoelectronic function with glass optical fibers is discussed. A chemical vapor deposition (CVD)-like process

Gopalan, Venkatraman

227

Optoelectronic Oscillators and Their Applications to 60-GHz Fiber-Fed  

E-Print Network [OSTI]

Optoelectronic Oscillators and Their Applications to 60-GHz Fiber-Fed Wireless Systems Kwang;Optoelectronic Oscillators and Their Applications to 60-GHz Fiber-Fed Wireless Systems by Kwang-Hyun Lee-1-2. Oscillator phase noise limited by resonator's Q.............................4 1-2. Optoelectronic oscillators

Choi, Woo-Young

228

Millimeter-wave Optoelectronic Mixers Based on CMOS-Compatible Si Photodetectors  

E-Print Network [OSTI]

Millimeter-wave Optoelectronic Mixers Based on CMOS-Compatible Si Photodetectors Hyo-Soon Kang-749, Korea Abstract -- We present millimeter-wave optoelectronic mixers based on Si photodetectors fabricated and optoelectronic mixer characteristics are investigated in order to optimize their performances. Using

Choi, Woo-Young

229

Computational Geometry On The OTIS-Mesh Optoelectronic Computer Chih-fang Wang Sartaj Sahni  

E-Print Network [OSTI]

Computational Geometry On The OTIS-Mesh Optoelectronic Computer Chih-fang Wang Sartaj Sahni: optoelectronic computer, OTIS- Mesh, convex hull, smallest enclosing box, ECDF, two-set dominance, maximal points within the group. The OTIS-Mesh optoelectronic computer is a class of OTIS computers in which

Sahni, Sartaj K.

230

Optoelectronic Properties of Self-Assembled InAs/InGaAs Quantum SANJAY KRISHNA  

E-Print Network [OSTI]

CHAPTER 10 Optoelectronic Properties of Self-Assembled InAs/InGaAs Quantum Dots SANJAY KRISHNA that exists in zero-dimensional systems but also for their application in electronic and optoelectronic-speed- and opto-electronics". In particular, with the advent of optical fibers and the ever increasing need

Krishna, Sanjay

231

Extraction and Modeling of the Optoelectronic Characteristics of an Optical Interconnect Link  

E-Print Network [OSTI]

Extraction and Modeling of the Optoelectronic Characteristics of an Optical Interconnect Link a technique that enables the extraction and modeling of some of the channel's optoelectronic characteristics and optoelectronic com- ponents utilized in the link. 1. Introduction In the last decade optical interconnects have

Esener, Sadik C.

232

SO8 IEEE PHOTONICS TECHNOLOGY LETTERS. VOL. 7 , NO. S. MAY 1995 Monolithic Optoelectronic Circuit Design  

E-Print Network [OSTI]

SO8 IEEE PHOTONICS TECHNOLOGY LETTERS. VOL. 7 , NO. S. MAY 1995 Monolithic Optoelectronic Circuit optoelectronic integration technique was proposed based on this circuit stability and consequently the monolithic integration of LED's and GaAs circuits by molecular beam epitaxial (MBE) growth, to form an optoelectronic

Shenoy, Krishna V.

233

INTEGRATION OF OPTOELECTRONICS AND MICROFLUIDICS FOR BIOLOGICAL AND CHEMICAL SENSING  

E-Print Network [OSTI]

INTEGRATION OF OPTOELECTRONICS AND MICROFLUIDICS FOR BIOLOGICAL AND CHEMICAL SENSING Thesis by Mark Over the past decade, rapid advances in microfluidics have led to the creation of valves, pumps, mixers of microfluidics is the need for a typically large interrogation setup to determine what is actually happening

Quake, Stephen R.

234

Device-scale perpendicular alignment of colloidal nanorods  

E-Print Network [OSTI]

direction (necessary for optoelectronics), but such arrayssolution-processed optoelectronics with performance matching

Baker, Jessica L.

2010-01-01T23:59:59.000Z

235

BridgeLux Inc former eLite Optoelectronics | Open Energy Information  

Open Energy Info (EERE)

BridgeLux Inc former eLite Optoelectronics BridgeLux Inc former eLite Optoelectronics Jump to: navigation, search Name BridgeLux Inc (former eLite Optoelectronics) Place Sunnyvale, California Zip 94086 Product Developer and provider of indium gallium nitride light emitting diodes (InGaN LEDs) for solid state lighting, mobile appliance, signage, and automotive applications. References BridgeLux Inc (former eLite Optoelectronics)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. BridgeLux Inc (former eLite Optoelectronics) is a company located in Sunnyvale, California . References ↑ "BridgeLux Inc (former eLite Optoelectronics)" Retrieved from "http://en.openei.org/w/index.php?title=BridgeLux_Inc_former_eLite_Optoelectronics&oldid=34303

236

Models of organometallic complexes for optoelectronic applications  

E-Print Network [OSTI]

Organometallic complexes have potential applications as the optically active components of organic light emitting diodes (OLEDs) and organic photovoltaics (OPV). Development of more effective complexes may be aided by understanding their excited state properties. Here we discuss two key theoretical approaches to investigate these complexes: first principles atomistic models and effective Hamiltonian models. We review applications of these methods, such as, determining the nature of the emitting state, predicting the fraction of injected charges that form triplet excitations, and explaining the sensitivity of device performance to small changes in the molecular structure of the organometallic complexes.

A. C. Jacko; Ross H. McKenzie; B. J. Powell

2010-07-02T23:59:59.000Z

237

Recent progress in transparent oxide semiconductors: Materials and device application  

Science Journals Connector (OSTI)

This paper reviews our recent research progress on new transparent conductive oxide (TCO) materials and electronic and optoelectronic devices based on these materials. First, described are the materials including p-type materials, deep-UV transparent TCO(?-Ga2O3), epitaxially grown ITO with atomically flat surface, transparent electrochromic oxide (NbO2F), amorphous TCOs, and nanoporous semiconductor 12CaO7Al2O3. Second, presented are TCO-based electronic/optoelectronic devices realized to date, UV/blue LED and UV-sensors based on transparent pn junction and high performance transparent TFT using n-type TCO as an n-channel. Finally, unique optoelectronic properties (p-type degenerate conduction, transfer doping of carriers, RT-stable exciton, and large optical nonlinearity) originating from 2D-electronic nature in p-type layered oxychalcogenides are summarized along with the fabrication method of epitaxial thin films of these materials.

Hideo Hosono

2007-01-01T23:59:59.000Z

238

Organic photosensitive devices using subphthalocyanine compounds  

DOE Patents [OSTI]

An organic photosensitive optoelectronic device, having a donor-acceptor heterojunction of a donor-like material and an acceptor-like material and methods of making such devices is provided. At least one of the donor-like material and the acceptor-like material includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound; and/or the device optionally has at least one of a blocking layer or a charge transport layer, where the blocking layer and/or the charge transport layer includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound.

Rand, Barry (Princeton, NJ); Forrest, Stephen R. (Ann Arbor, MI); Mutolo, Kristin L. (Hollywood, CA); Mayo, Elizabeth (Alhambra, CA); Thompson, Mark E. (Anaheim Hills, CA)

2011-07-05T23:59:59.000Z

239

Graphene-based Material Systems for Nanoelectronics and Energy Storage Devices  

E-Print Network [OSTI]

Graphene photonics and optoelectronics" Nature PhotonicsFilm Electronics and Optoelectronics" Advanced MaterialsFilm Electronics and Optoelectronics" Advanced Materials

Guo, Shirui

2012-01-01T23:59:59.000Z

240

Integration of optoelectronics and MEMS by free-space micro-optics  

SciTech Connect (OSTI)

This report represents the completion of a three-year Laboratory-Directed Research and Development (LDRD) program to investigate combining microelectromechanical systems (MEMS) with optoelectronic components as a means of realizing compact optomechanical subsystems. Some examples of possible applications are laser beam scanning, switching and routing and active focusing, spectral filtering or shattering of optical sources. The two technologies use dissimilar materials with significant compatibility problems for a common process line. This project emphasized a hybrid approach to integrating optoelectronics and MEMS. Significant progress was made in developing processing capabilities for adding optical function to MEMS components, such as metal mirror coatings and through-vias in the substrate. These processes were used to demonstrate two integration examples, a MEMS discriminator driven by laser illuminated photovoltaic cells and a MEMS shutter or chopper. Another major difficulty with direct integration is providing the optical path for the MEMS components to interact with the light. The authors explored using folded optical paths in a transparent substrate to provide the interconnection route between the components of the system. The components can be surface-mounted by flip-chip bonding to the substrate. Micro-optics can be fabricated into the substrate to reflect and refocus the light so that it can propagate from one device to another and them be directed out of the substrate into free space. The MEMS components do not require the development of transparent optics and can be completely compatible with the current 5-level polysilicon process. They report progress on a MEMS-based laser scanner using these concepts.

WARREN,MIAL E.; SPAHN,OLGA B.; SWEATT,WILLIAM C.; SHUL,RANDY J.; WENDT,JOEL R.; VAWTER,GREGORY A.; KRYGOWSKI,TOM W.; REYES,DAVID NMN; RODGERS,M. STEVEN; SNIEGOWSKI,JEFFRY J.

2000-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Mobile Communication Device Allowance Authorization Form Revised: April 2011 MOBILE COMMUNICATION DEVICE ALLOWANCE AUTHORIZATION FORM  

E-Print Network [OSTI]

Mobile Communication Device Allowance Authorization Form Revised: April 2011 MOBILE COMMUNICATION list your CURRENT PLAN features: Mobile service provider Name: ________ Monthly Charge: $ Device.edu/policy/itc/FINAL%20Policy%20on%20Mobile%20Comm%20Devices.htm I have read the Mobile Communication Devices Policy

Dyer, Bill

242

Studies of the surface treatment effect for the optoelectronic properties of cholesteric blue phase liquid crystals.  

E-Print Network [OSTI]

??In this study, we researched three kinds of surface treatment (no surface treatment, homogeneous alignment (HA) and vertical alignment (VA)) effect for the optoelectronic properties (more)

Hsieh, Cheng-Wei

2011-01-01T23:59:59.000Z

243

WIPP - Public Reading Facilities  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Public Reading Facilities/Electronic Reading Facilities The Freedom of Information Act (FOIA) and Electronic FOIA (E-FOIA) require that various specific types of records, as well as various other records, be maintained in public reading facilities. Before you submit a FOIA request, we recommend you contact or visit the appropriate public reading facility to determine if the records you are seeking have already been released. The U.S. Department of Energy (DOE), as well as other related DOE sites, have established home pages on the Internet with links to other web sites. If you determine a specific facility might have records in which you are interested, requests for those records can be made directly to the public reading rooms identified below. Copying of records located in the public reading rooms must be made by the staff of those facilities.

244

Public Reading Room  

Office of Legacy Management (LM)

has established a Public Reading Room at 955 has established a Public Reading Room at 955 Mound Road, Miamisburg, Ohio, which contains documents and information related to Mound as required under Section 117(d) of SARA. Copies of key Mound records, including the CERCLA Administrative Record and Information Repository, are kept in the Public Reading Room. The Administrative Record and Information Repository for Mound are updated as new documents are created and an index of documents in the complete collections accompanies each update. The Public Reading Room also contains reference items consisting of technical documents, news clippings, videotapes, journal articles, annual reports, and environmental restoration and decontamination and decommissioning decisional documents. Stakeholders are

245

DOE Public Reading Room  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

environmental and waste management, and site-specific concerns. The INL Research Library provides access to information, staffing, and research assistance for the DOE Reading...

246

Nondestructive and noncontact methods for optoelectronic diagnostics of solar cells at all stages of the fabrication process are in strong demand.  

E-Print Network [OSTI]

Nondestructive and noncontact methods for optoelectronic diagnostics of solar cells at all stages-destructive diffusion-wave method for optoelectronic transport and equivalent electrical circuit diagnostics

Mandelis, Andreas

247

Strain relaxation of SiGe islands on compliant oxide Center for Photonics and Optoelectronic Materials and Department of Electrical Engineering,  

E-Print Network [OSTI]

and Optoelectronic Materials and Department of Electrical Engineering, Princeton University, Princeton, New Jersey Laboratory, Washington, DC 20375 J. C. Sturm Center for Photonics and Optoelectronic Materials and Department

Duffy, Thomas S.

248

2236 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 16, NO. 12, DECEMBER 1998 Wafer-Fused Optoelectronics for Switching  

E-Print Network [OSTI]

2236 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 16, NO. 12, DECEMBER 1998 Wafer-Fused Optoelectronics will also be discussed. Index Terms--Integrated optoelectronics, optical couplers, op- tical switches

249

SPIE Proceedings BIOS 2005, Ophthalmic Technologies XV, vol. 5688A, paper 37 Towards High-Resolution Optoelectronic Retinal Prosthesis  

E-Print Network [OSTI]

-Resolution Optoelectronic Retinal Prosthesis Daniel Palankera,b , Philip Huiea,b , Alexander Vankovb , Alon Ashera , Steven a design of the optoelectronic retinal prosthetic system that can activate a retinal stimulating array

Palanker, Daniel

250

2=picosecond, GaAs photodiode optoelectronic circuit for optical correlation applications  

E-Print Network [OSTI]

2=picosecond, GaAs photodiode optoelectronic circuit for optical correlation applications K. D. Li GaAs Schottky photodiode is monolithically integrated with a microwave detector. By using this new optoelectronic circuit.in place of a nonlinear crystal in an optical correlation setup, the high-speed photodiode

Ozbay, Ekmel

251

Single ultrafast diffusive conduction based optoelectronic switch for multi-channel operation  

E-Print Network [OSTI]

Single ultrafast diffusive conduction based optoelectronic switch for multi-channel operation Fatih to multi-channel operation, including Green's function diffusive conduction solution and crosstalk conduction based optoelectronic switches that accommodate >100 optical channels (with 2,000mm-2 channel

Miller, David A. B.

252

IEEE ULTRASONICS SYMPOSIUM 1998 IN SENDAI, JAPAN 1 Novel optoelectronic signal processing via the combination of SAW  

E-Print Network [OSTI]

IEEE ULTRASONICS SYMPOSIUM 1998 IN SENDAI, JAPAN 1 Novel optoelectronic signal processing via a completely new and promising approach to- ward another generation of acoustoelectric and optoelectronic heterostructure can be exploited to alter the optical proper- ties of an optoelectronic structure in many ways

Ludwig-Maximilians-Universität, München

253

Millimeter-wave Optoelectronic Mixers based on InP HEMT Chang-Soon Choi and Woo-Young Choi  

E-Print Network [OSTI]

Millimeter-wave Optoelectronic Mixers based on InP HEMT Chang-Soon Choi and Woo-Young Choi optoelectronic mixers in 60GHz band. They provide mixing function with high internal conversion gain over be utilized as optoelectronic mixers which perform photodetection of optically transmitted data and

Choi, Woo-Young

254

Journal of Microwaves, Optoelectronics and Electromagnetic Applications, Vol. X, No. Y, Month 2010 Numerical treatment of rounded and sharp  

E-Print Network [OSTI]

Journal of Microwaves, Optoelectronics and Electromagnetic Applications, Vol. X, No. Y, Month 2010 the corners for any value of . For a precise definition, refer to [2]. Brazilian Microwave and Optoelectronics in "journal of microwaves, optoelectronics and electromagnetic applications 10, 1 (2011) 66-81" DOI : 10

Boyer, Edmond

255

A Millimeter-wave Harmonic Optoelectronic Mixer based on InAlAs/InGaAs Metamorphic HEMT  

E-Print Network [OSTI]

A Millimeter-wave Harmonic Optoelectronic Mixer based on InAlAs/InGaAs Metamorphic HEMT ChangAs substrate as a harmonic optoelectronic mixer. The fabricated metamorphic HEMT simultaneously performs photodetection at 1.55µµµµm lightwave and harmonic optoelectronic up-conversion into millimeter-wave band

Choi, Woo-Young

256

624 IEEE JOURNAL ON SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 9, NO. 2, MARCH/APRIL 2003 Optoelectronic Interconnection Technology  

E-Print Network [OSTI]

Optoelectronic Interconnection Technology in the HOLMS System Paul Lukowicz, Member, IEEE, Jürgen Jahns, Member. Süllau, J. F. Snowdon, M. Wirz, and G. Tröster Invited Paper Abstract--The High-Speed Optoelectronic and economical by developing optoelectronic packaging tech- nology compatible with standard electronic assembly

Jahns, Jürgen

257

JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 16, NO. 3, MARCH 1998 443 Optoelectronic Mixing Using a Short Cavity  

E-Print Network [OSTI]

JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 16, NO. 3, MARCH 1998 443 Optoelectronic Mixing Using a Short, IEEE, and U. Koren Abstract--We describe optoelectronic mixing in a short cavity distributed Bragg with an increasing frequency is slower. Index Terms--Analog microwave/optics, optoelectronic mixing. I. INTRODUCTION

Eisenstein, Gadi

258

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 20, NO. 19, OCTOBER 1, 2008 1645 Injection-Locked Hybrid Optoelectronic Oscillators  

E-Print Network [OSTI]

Optoelectronic Oscillators for Single-Mode Oscillation Kwang-Hyun Lee, Jae-Young Kim, and Woo-Young Choi Abstract--We demonstrate single-mode extraction from mul- tiple modes in a 30-GHz optoelectronic oscillator (OEO by changing the electrical oscillation frequency. Index Terms--Injection-locked oscilator, optoelectronic

Choi, Woo-Young

259

Direct optoelectronic generation and detection of sub-ps-electrical pulses on sub-mm-coaxial transmission lines  

E-Print Network [OSTI]

Direct optoelectronic generation and detection of sub-ps-electrical pulses on sub efficient direct optoelectronic generation of sub-ps-THz pulses on 50 coaxial transmission lines with a 330 with an optoelectronic antenna having sub-ps-time resolution. We observed low-loss, single transverse electromagnetic

260

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 20, NO. 13, JULY 1, 2008 1151 Low-Cost Optoelectronic Self-Injection-Locked  

E-Print Network [OSTI]

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 20, NO. 13, JULY 1, 2008 1151 Low-Cost Optoelectronic Self by injecting 8-dBm optical signals without using any high-speed optoelectronic components. Index Terms--InP monolithic oscillator, optoelectronic oscillator (OEO), phase-noise reduction, self-injection locking (SIL

Choi, Woo-Young

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Design of a Crossbar Switch Chip for Use in a Demonstration System of an Optoelectronic Multi-Chip Module  

E-Print Network [OSTI]

Design of a Crossbar Switch Chip for Use in a Demonstration System of an Optoelectronic Multi in the area of optoelectronic interconnection and packaging technology in order to proliferate the feasibility of extremely high bandwidth and low latency optoelectronic "multi-chip modules" (OE-MCMs). Our group

Bakos, Jason D.

262

An Optoelectronic Multi-Terabit CMOS Switch Core for Local Area Networks Honglin Wu, Amir Gourgy, and Ted H. Szymanski  

E-Print Network [OSTI]

1 An Optoelectronic Multi-Terabit CMOS Switch Core for Local Area Networks Honglin Wu, Amir Gourgy@grads.ece.mcmaster.ca, and teds@mail.ece.mcmaster.ca Abstract Optoelectronic integrated circuits can support thousands of an integrated optoelectronic CMOS crossbar switch to interconnect approx. 128 parallel fiber ribbon optical

Szymanski, Ted

263

Optimized deposition and characterization of nanocrystalline magnesium indium oxide thin films for opto-electronic applications  

Science Journals Connector (OSTI)

Transparent conducting magnesium indium oxide films (MgIn2O4) were deposited on to quartz substrates without a buffer layer at an optimized deposition temperature of 450C to achieve high transmittance in the visible spectral range and electrical conductivity in the low temperature region. Magnesium ions are distributed over the tetrahedral and octahedral sites of the inverted spinel structure with preferential orientation along (311) Miller plane. The possible mechanism that promotes conductivity in this system is the charge transfer between the resident divalent (Mg2+) and trivalent (In3+) cations in addition to the available oxygen vacancies in the lattice. A room temperature electrical conductivity of 1.5נ10?5Scm?1 and an average transmittance >75% have been achieved. Hall measurements showed n-type conductivity with electron mobility value 0.95נ10?2cm2V?1s?1 and carrier concentration 2.7נ1019cm?3. Smoothness of the film surface observed through atomic force microscope measurements favors this material for gas sensing and opto-electronic device development.

A. Moses Ezhil Raj; C. Ravidhas; R. Ravishankar; A. Rathish Kumar; G. Selvan; M. Jayachandran; C. Sanjeeviraja

2009-01-01T23:59:59.000Z

264

Reading Comprehension Passages  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Welcome to Reading Comprehension Passages! Welcome to Reading Comprehension Passages! Select one of the passages listed below. Complete the passage by selecting the words that best fit the context of the passage. Press the 'Check My Answers!' button when you are done to see how you did! Attention Teachers!! Add your own reading comprehension passages for your class to use! If you are reading this, your browser is NOT running JavaScript. JavaScript MUST be enabled for this section of our site to work. Once you have turned JavaScript on, reload this page and this warning will go away. The Scientific Method in the Lab* Charges and Electricity The Earth's Energy Budget The Water Cycle The Water Cycle #2* Minerals* 3rd Grade Resources* Where Plants and Animals Live* Internet Safety Looking for Quarks Inside the Atom

265

Multi-rhythmicity in an optoelectronic oscillator with large delay  

E-Print Network [OSTI]

An optoelectronic oscillator exhibiting a large delay in its feedback loop is studied both experimentally and theoretically. We show that multiple square-wave oscillations may coexist for the same values of the parameters (multi-rhythmicity). Depending on the sign of the phase shift, these regimes admit either periods close to an integer fraction of the delay or periods close to an odd integer fraction of twice the delay. These periodic solutions emerge from successive Hopf bifurcation points and stabilize at a finite amplitude following a scenario similar to Eckhaus instability in spatially extended systems. We find quantitative agreements between experiments and numerical simulations. The linear stability of the square-waves is substantiated analytically by determining stable fixed points of a map.

Weicker, Lionel; Rosin, David P; Gauthier, Daniel J

2014-01-01T23:59:59.000Z

266

Physics of Optoelectronic and Plasmonic Devices: Cavities, Waveguides, Modulators and Lasers  

E-Print Network [OSTI]

used. The resulting EL vs. electrical power input curves area electrical 4-probe test and determined to be 6 cm 2 /Vs,

Sorger, Volker J.

2011-01-01T23:59:59.000Z

267

Physics of Optoelectronic and Plasmonic Devices: Cavities, Waveguides, Modulators and Lasers  

E-Print Network [OSTI]

6] The International Technology Roadmap for Semiconductors2] The International Technology Roadmap for Semiconductors2] The International Technology Roadmap for Semiconductors

Sorger, Volker J.

2011-01-01T23:59:59.000Z

268

Nanoscale interfacial structure for Novel Opto-electronic and Ion-trapping Devices  

E-Print Network [OSTI]

the disk-head perturbations while flying. An interferometer-to directly load our flying heads on to the disk at 10 m/sflying height control slider with piezoelectric nanoactuator in hard disk

Ulin-Avila, Erick

2013-01-01T23:59:59.000Z

269

Fabrication and characterization of quantum-confined optoelectronic devices based on CdSe nanocrystals  

E-Print Network [OSTI]

Colloidal semiconductor quantum dots (QDs), or nanocrystals (NCs), are the subject of intense research for their novel size dependent optical and electronic properties. Since the development of synthetic methods to produce ...

Woo, Wing-Keung, 1972-

2002-01-01T23:59:59.000Z

270

3D Simulation of Integrated Optoelectronic Devices Nicolas Trenado, Jeff Henness, Leif Johansson, John Hutchinson,  

E-Print Network [OSTI]

Stark effect) are considered as well as free-carrier and intervalence band absorption. InGaAsP material, optical waveguiding, and Bragg reflection [2]. Field effects on MQW gain and absorption (quantum confined-uniform absorption due to band filling, which results in a non-linear detector response. Forward bias gives optical

Coldren, Larry A.

271

The impact of manufacturing offshore on technology development paths in the automotive and optoelectronics industries  

E-Print Network [OSTI]

This dissertation presents a two-case study of the impact of manufacturing offshore on the technology trajectory of the firm and the industry. It looks in particular at the automotive and optoelectronics industries. The ...

Fuchs, Erica R. H. (Erica Renee H.), 1977-

2006-01-01T23:59:59.000Z

272

Optoelectronic implementations of Pulse-Coupled Neural Networks : challenges and limitations  

E-Print Network [OSTI]

This thesis examines Pulse Coupled Neural Networks (PCNNs) and their applications, and the feasibility of a compact, rugged, cost-efficient optoelectronic implementation. Simulation results are presented. Proposed optical ...

Wise, Raydiance (Raydiance Raychele)

2007-01-01T23:59:59.000Z

273

Characterization of polygrama green photopolymer for Compact Optoelectronic Integrated Neural (COIN) coprocessor applications  

E-Print Network [OSTI]

The research described in this thesis is a portion of a larger project within the Photonic Systems Group at MIT to design Compact Optoelectronic Integrated Neural (COIN) co processor [13]. The choice of photopolymers is ...

Harton, Renee M

2008-01-01T23:59:59.000Z

274

Fabrication of optoelectronic microwave linear and ring resonators on a gallium arsenide substrate  

E-Print Network [OSTI]

FABRICATION OF OPTOELECTRONIC MICROWAVE LINEAR AND RING RESONATORS ON A GALLIUM ARSENIDE SUBSTRATE A Thesis by CHUN-LIANG YEH Submitted to the Office of Graduate Studies of Texas ASM University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE August 1993 Major Subject: Electrical Engineering FABRICATION OF OPTOELECTRONIC MICROWAVE LINEAR AND RING RESONATORS ON A GALLIUM ARSENIDE SUBSTRATE A Thesis by CHUN-LIANG YEH Approved as to style and content by: Mark...

Yeh, Chun-Liang

1993-01-01T23:59:59.000Z

275

Manhattan Project: Suggested Readings  

Office of Scientific and Technical Information (OSTI)

SUGGESTED READINGS SUGGESTED READINGS Resources > Readings The literature on the Manhattan Project is extensive. The purpose of this web page is not to catalogue it, but only to suggest a very select few places to start. For more exhaustive lists of secondary works relating to the early history of nuclear energy, consult the bibliographies of the books listed below. Suggested Surveys of the Manhattan Project Gosling, F. G. The Manhattan Project: Making the Atomic Bomb. DOE/MA-0001; Washington: History Division, Department of Energy, January 1999. An overview history by the Chief Historian of the Department of Energy and the basis for most of the "Events" in this web site. The best short survey for the general reader. Revised with additional photographs in January 2010 as DOE/MA-0002 Revised and available in .pdf format.

276

Electronic Reading Room  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Electronic Reading Room - making information about the Freedom of Information Act (FOIA) and Privacy Act process accessible to the public electronically. Electronic Reading Room - making information about the Freedom of Information Act (FOIA) and Privacy Act process accessible to the public electronically. Major Information Systems - Final Opinions - [5 USC 552 (a)(2)](A) final opinions, including concurring and dissenting opinions, as well as orders, made in the adjudication of cases within the Office of Hearings and Appeals Statements of Policy and Interpretation and Administrative Staff Manuals and Instructions - [5 USC 552 (a)(2)](B) those statements of policy and interpretation which have been adopted by the agency and are not published in the Federal Register - Directives, DOE Orders, Headquarters Orders, Secretarial Notices, Technical Standards, Forms, Delegations, Electronic Library Public Reading Facilities - making information available for public inspection and copying

277

Surface plasmon-enhanced photovoltaic device  

DOE Patents [OSTI]

Photovoltaic devices are driven by intense photoemission of "hot" electrons from a suitable nanostructured metal. The metal should be an electron source with surface plasmon resonance within the visible and near-visible spectrum range (near IR to near UV (about 300 to 1000 nm)). Suitable metals include silver, gold, copper and alloys of silver, gold and copper with each other. Silver is particularly preferred for its advantageous opto-electronic properties in the near UV and visible spectrum range, relatively low cost, and simplicity of processing.

Kostecki, Robert; Mao, Samuel

2014-10-07T23:59:59.000Z

278

Reading context in design  

E-Print Network [OSTI]

This study explores how, in the process of design, the reading of an existing order in the organizing features of a setting potentiates form. For this purpose, a design exercise on a site in the city of Jaipur in India has ...

Agrawal, Vivek

1993-01-01T23:59:59.000Z

279

Reading Arendt in Iran/Reading Iran through Arendt: Speech,  

E-Print Network [OSTI]

Reading Arendt in Iran/Reading Iran through Arendt: Speech, Action, and the Question Arendt in Iran/Reading Iran through Arendt: Speech, Action, and the Question of Street Politics for Arendt readers in the postrevolutionary context of the Islamic Republic of Iran. Arendt's skepticism

Illinois at Chicago, University of

280

Reading Room Locations  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

FOIA Offices and Reading Rooms FOIA Offices and Reading Rooms FOIA Office Locations Our FOIA Officers are located at various sites throughout the DOE complex, each with responsibility for records located at or under the jurisdiction of the site. We recommend that you send your request directly to that specific site. This will shorten the processing time. However, if you do not know which location has responsive records, you may either call the Headquarters FOIA office at (202) 586-5955 to determine the appropriate office, or mail the request to the Headquarters FOIA office. Other records are publicly available in the facilities listed below: Headquarters U.S. Department of Energy FOIA/Privacy Act Group 1000 Independence Avenue, SW Washington, D.C. 20585 Phone: 202-586-5955 Fax: 202-586-0575

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Fabrication and Low-Frequency Noise Characterization of Devices Made From Dirac Materials  

E-Print Network [OSTI]

Nanoelectronics and Optoelectronics, 6, 1-5 (2011). [13] J. of Nanoelectronics and Optoelectronics, 6, 1-5 (2011).Nanoelectronics and Optoelectronics, 6, 1-5 (2011). Figure

Hossain, Md. Zahid

2012-01-01T23:59:59.000Z

282

Generalized Volterra Series model for highly nonlinear optical interconnects, circuits and devices  

E-Print Network [OSTI]

Organic Optics and Optoelectronics. 1998 IEEE/ LEOS SummerInternational Journal of Optoelectronics , Vol. 11, No: 3,VCSELs, Honeywell Optoelectronics Application Note. F.

Ycetrk, Emel

2007-01-01T23:59:59.000Z

283

Daydreaming Devices  

E-Print Network [OSTI]

Daydreaming Devices is a project on aspects of daydream and the design of convertible furniture within the context of art. This thesis addresses the concepts and the design of two daydreaming devices developed during my ...

Da Ponte, Ana Sofia Lopes

2008-01-01T23:59:59.000Z

284

Strain partition of SiSiGe and SiO2 SiGe on compliant substrates Center for Photonics and Optoelectronic Materials and Department of Electrical Engineering,  

E-Print Network [OSTI]

and Optoelectronic Materials and Department of Electrical Engineering, Princeton University, Princeton, New Jersey for Photonics and Optoelectronic Materials and Department of Electrical Engineering, Princeton University

Duffy, Thomas S.

285

1856 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 8, AUGUST 2010 Harvesting and Transferring Vertical Pillar Arrays of  

E-Print Network [OSTI]

, optoelectronics, and energy conversion devices. Reducing the use of single-crystal substrates can contribute, and energy conversion systems. Index Terms--Compound semiconductors, heterogeneous ma- terial integration- crystal substrate to a low-cost carrier substrate while simulta- neously preserving the integrity, order

Islam, M. Saif

286

Luminescent Silicon Nanoparticles Capped by Conductive Polyaniline through the Self-Assembly Method  

E-Print Network [OSTI]

optoelectronic devices. These applications in- clude their use as chemical sensors,9 optoelectronic devices,10

Swihart, Mark T.

287

Millimeter-wave InP/InGaAs HPT optoelectronic mixers and their application to 60GHz bi-directional radio-on-fiber systems  

E-Print Network [OSTI]

#12;Millimeter-wave InP/InGaAs HPT optoelectronic mixers and their application to 60GHz bi demonstrate the use of InP/InGaAs heterojunction phototransistors as optoelectronic mixers for bi are frequency up-converted to millimeter-wave band signals in InP HPT optoelectronic mixer with remotely

Choi, Woo-Young

288

Non-Shilnikov cascades of spikes and hubs in a semiconductor laser with optoelectronic feedback Joana G. Freire1,2  

E-Print Network [OSTI]

Non-Shilnikov cascades of spikes and hubs in a semiconductor laser with optoelectronic feedback Incomplete homoclinic scenarios were recently measured in a semiconductor laser with optoelectronic feed comprehensive review, see Wieczorek et al. 6 . The impact of optoelectronic systems in the science and applica

Gallas, Jason

289

Suppression of intensity noise of a laser-diode-pumped single-frequency Nd:YVO4 laser by optoelectronic control  

E-Print Network [OSTI]

by optoelectronic control Jing Zhang, Hongliang Ma, Changde Xie, and Kunchi Peng The intensity-noise reduction of a laser-diode-pumped single-frequency ring Nd:YVO4 laser when differ- ent optoelectronic control systems techniques, optoelectronic feedback control of the drive current of the pump laser diode and feed

Zhang, Jing

290

Optoelectronic Mixers for Fiber-fed 60-GHz Wireless Systems Woo-Young Choi, Jae-Young Kim and Myung-Jae Lee  

E-Print Network [OSTI]

#12;Optoelectronic Mixers for Fiber-fed 60-GHz Wireless Systems Woo-Young Choi, Jae-Young Kim investigated millimeter-wave fiber-fed wireless systems using optoelectronic mixers based on hetero-effective optoelectronic (O/E) mixer, which performs photo- detection and frequency conversion functions simultaneously. We

Choi, Woo-Young

291

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 5, NO. 2, MARCH/APRIL 1999 261 The AMOEBA Switch: An Optoelectronic Switch  

E-Print Network [OSTI]

The AMOEBA Switch: An Optoelectronic Switch for Multiprocessor Networking Using Dense-WDM Ashok V- cessor optoelectronic bit-sliced arrayed (AMOEBA) crossbar switch. The AMOEBA switch addresses directly onto silicon VLSI circuits. Optoelectronic-VLSI technology is used to integrate the switch fabric

Ford, Joseph E.

292

In Proceedings of the IEEE Special Issue on Optical Computing, Nov. 1994. Optoelectronic Time-of-Flight Design and the Demonstration  

E-Print Network [OSTI]

In Proceedings of the IEEE Special Issue on Optical Computing, Nov. 1994. Optoelectronic Time P. Heuring, Robert Feuerstein Optoelectronic Computing Systems Center University of Colorado optoelectronic design. It was made possible by a new digi- tal design method known as time-of-flight design

Heuring, Vincent

293

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

294

IEEE JOURNAL ON SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 6, NO. 6, NOVEMBER/DECEMBER 2000 1231 Microsystem Optoelectronic Integration for Mixed  

E-Print Network [OSTI]

Microsystem Optoelectronic Integration for Mixed Multisignal Systems Nan M. Jokerst, Senior Member, IEEE of optoelectronic de- vices with electronic circuits and systems has growing application in many fields, ranging- ment tolerant optoelectronic links for network interconnections, smart pixel focal plane array

Wills, Scott

295

Toward nanowire devices and systems : heterostructure design and dielectrophoretic integration  

E-Print Network [OSTI]

in electronics, 3-8 optoelectronics, 9 - 13 sensing 14-17in electronics, 6 optoelectronics, 40 sensing 41 andin electronics, 8-13 optoelectronics, 14 sensing 19-22 and

Raychaudhuri, Sourobh

2009-01-01T23:59:59.000Z

296

Performance of a malaria microscopy image analysis slide reading device  

Science Journals Connector (OSTI)

Viewing Plasmodium in Romanovsky-stained blood has long been considered the gold standard for diagnosis and a cornerstone in management of the disease. This method however, requires a subjective evaluation by ...

William R Prescott; Robert G Jordan; Martin P Grobusch

2012-05-01T23:59:59.000Z

297

Reading in the park; Parklsning.  

E-Print Network [OSTI]

?? My project is about the library of Kungsholmen, spaces for interaction and theactivity of reading. In the beginning of the 20th century The public (more)

Evensen, Fredrik

2014-01-01T23:59:59.000Z

298

Electrochromic devices  

DOE Patents [OSTI]

An electrochromic device is disclosed having a selective ion transport layer which separates an electrochemically active material from an electrolyte containing a redox active material. The devices are particularly useful as large area architectural and automotive glazings due to there reduced back reaction.

Allemand, Pierre M. (Tucson, AZ); Grimes, Randall F. (Ann Arbor, MI); Ingle, Andrew R. (Tucson, AZ); Cronin, John P. (Tucson, AZ); Kennedy, Steve R. (Tuscon, AZ); Agrawal, Anoop (Tucson, AZ); Boulton, Jonathan M. (Tucson, AZ)

2001-01-01T23:59:59.000Z

299

Technology Control Plan Grigg Hall houses most of the University's optical and optoelectronic research facilities,  

E-Print Network [OSTI]

Technology Control Plan Grigg Hall Grigg Hall houses most of the University's optical) and subject to export control regulations. This Technology Control Plan has been developed to ensure for Optoelectronics and Optical Communications (in the case of Center labs). Additionally, Clean Room facilities

Howitt, Ivan

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Microchannel devices  

SciTech Connect (OSTI)

The fabrication of stainless steel microchannel heat exchangers was examined through microlamination, the process of diffusion bonding precision machined metallic foils. The influence of diffusion bonding parameters, as well as the device geometry on the strength of the bond between the foils and embedded channel integrity, was investigated. During diffusion bonding, high temperatures and/or pressures result in well bonded foils, but these conditions cause the embedded channels to deform, which will degrade the efficiency of fluid flow through the channels. Alternatively, low temperatures and/or pressures result in undeformed channels but weakly bonded foils. This causes failure of the device due to fluid leakage. Thus, a processing envelope exists for producing a sound device with no fluid leakage and no degradation of fluid flow properties. The theoretical limit on aspect ratio within two-fluid counter-flow microchannel heat exchangers was also investigated. A counter-flow device is comprised of alternating layers of microchannels, which allow the two fluids to flow in opposite directions separated by fins. A theoretical model for interpreting the span of the fin as a function of the fin thickness was established. The model was verified experimentally by fabricating specimens to simulate the counter-flow device. The results of these investigations were used to aid in the design and processing of prototype microchannel devices.

Alman, David E.; Wilson, Rick D.

2001-09-01T23:59:59.000Z

302

ZnO Thick Film Based Opto-electronic Humidity Sensor for a Wide Range of Humidity  

Science Journals Connector (OSTI)

Sensitivity of zinc oxide film to humidity is studied using prism based opto-electronic sensor configuration. Film is deposited on the base of the prism by screen printing. The film is crystalline in nature an...

Shobhna Dixit; Anchal Srivastava; R. K. Shukla; Atul Srivastava

303

Fabrication of wideband optoelectronic differential amplifier using a balanced receiver on a semi-insulating GaAs substrate  

E-Print Network [OSTI]

FABRICATION OF WIDEBAND OPTOELECTRONIC DIFFERENTIAL AMPLIFIER USING A BALANCED RECEIVER ON A SEMI-INSULATING GAAS SUBSTRATE A Thesis by KYOO NAM CHOI Submitted to the Office of Graduate Studies of Texas ARM University in partial fulfillment... of the requirements for the degree of MASTER OF SCIENCE December 1989 Major Subject: Electrical Engineering FABRICATION Ol' WIDEBAND OPTOELECTRONIC DIFFERENTIAL A1VIPLIFIER USING A BAI, ANCED RECEIVER ON A SEMI. INSULATING GAAS SUBSTRATE A Thesis by l(YOO NAM...

Choi, Kyoo Nam

1989-01-01T23:59:59.000Z

304

Erasure of Time Delay Signatures in the Output of an Optoelectronic Feedback Laser with Modulated Delays and Chaos Synchronization  

E-Print Network [OSTI]

By studying the autocorrelation function of the optoelectronic feedback semiconductor laser output we establish that the signatures of time delays can be erased in systems incorporating modulated feedback time delays. This property is of importance for the suitability of such laser systems for secure chaos-based communication systems. We also make the first report on chaos synchronization in both unidirectionally and bidirectionally coupled multiple time delay chaotic semiconductor lasers with modulated optoelectronic feedbacks.

E. M. Shahverdiev; K. A. Shore

2009-06-17T23:59:59.000Z

305

Reading Room | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Reading Reading Room Reading Room Welcome to the Freedom of Information Act (FOIA) Electronic Reading Room for the Department of Energy at Headquarters. The FOIA requires certain kinds of documents to be made available to the public for inspection and copying. This is a requirement for agencies of the executive branch of the federal government. The documents that are required to be made available by the FOIA are: Final Opinions [5 USC 552 (a)(2)](A) final opinions, including concurring and dissenting opinions, as well as orders, made in the adjudication of cases. Office of Hearings and Appeal - FOIA Appeals Initial agency determinations in response to FOIA and Privacy Act requests may be appealed to the Office of Hearings and Appeals (OHA). Decisions of the OHA constitute the agency's final determinations on requests made under

306

Reading Room | Department of Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Freedom of Information Act » Reading Freedom of Information Act » Reading Room Reading Room Welcome to the Freedom of Information Act (FOIA) Electronic Reading Room for the Department of Energy at Headquarters. The FOIA requires certain kinds of documents to be made available to the public for inspection and copying. This is a requirement for agencies of the executive branch of the federal government. The documents that are required to be made available by the FOIA are: Final Opinions [5 USC 552 (a)(2)](A) final opinions, including concurring and dissenting opinions, as well as orders, made in the adjudication of cases. Office of Hearings and Appeal - FOIA Appeals Initial agency determinations in response to FOIA and Privacy Act requests may be appealed to the Office of Hearings and Appeals (OHA). Decisions of

307

Reading File Bonneville Power Administration  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Reading File Bonneville Power Administration P.O. Box 3621 Portland, Oregon 97208-3621 POWER SERVICES In reply refer to: PG-5 Ms. Renata Kurschner Director, Generation Resource...

308

Non-invasive optoelectronic system for measurement of electrostatic discharge (ESD) induced phenomena  

SciTech Connect (OSTI)

The design of a high speed optoelectronic system consisting of an electrically floating detector/transmitter module, coupled to a receiver by a fiber optic link, is described. Typical applications of this optical decoupled system, involving electrostatic discharge (ESD), are described. These include: the optical signature characterization of discharges, and the measurement of conducted and radiated electromagnetic interference (EMI) due to ESD. Results of experiments conducted to demonstrate the qualitative performance characteristics of the measurement system are presented.

Greason, W.D.; Kucerovsky, Z.; Bulach, S.; Flatley, M.W. [Univ. of Western Ontario, London, Ontario (Canada). Dept. of Electrical Engineering

1995-12-31T23:59:59.000Z

309

Using Fuzzy Integral Approach to Enhance Site Selection Assessment A Case Study of the Optoelectronics Industry  

Science Journals Connector (OSTI)

Abstract The policies deployed by the government in Taiwan determine dramatically affect the development of a sector. In the past three decades, the high-tech industry has contributed to the prosperity of the economy for Taiwan. The focus of potential sectors includes green energy, optoelectronics, biotechnology industry, and agricultural science and technology industries. This study is to develop an enhanced assessment approach to evaluate candidate sites for building an optoelectronics factory. Traditionally, the assessment approach was conducted by ignoring the multiplicative effects of explored selection criteria in the real world. In order to resolve the above inadequacy on site selection assessment, fuzzy integral method (FIM) and consistent fuzzy preference relations (CFPR) were integrated to the proposed assessment approach to enhance the site selection assessment. Two optoelectronics sites were evaluated by employing the proposed assessment approach. The results through implementing the proposed approach not only could benefit decision makers to facilitate the site selection but also be more effective in real operations than tradition additive aggregate method. The results of the sensitivity analysis on FIM results were also more effective to plan the improvement strategies for the targeted site.

Yao-Chen Kuo; Shih-Tong Lu; Gwo-Hshiung Tzeng; Ying-Chieh Lin; Yu-Shyang Huang

2013-01-01T23:59:59.000Z

310

Detection device  

DOE Patents [OSTI]

The present invention is directed to a detection device comprising: (1) an entrance chamber, (2) a central chamber, and (3) an exit chamber. The central chamber includes an ionizing gas, anode, and means for connecting the anode with an external power supply and pulse counter.

Smith, Jay E. (Pittsburgh, PA)

1984-01-01T23:59:59.000Z

311

Laser device  

DOE Patents [OSTI]

A laser device includes a virtual source configured to aim laser energy that originates from a true source. The virtual source has a vertical rotational axis during vertical motion of the virtual source and the vertical axis passes through an exit point from which the laser energy emanates independent of virtual source position. The emanating laser energy is collinear with an orientation line. The laser device includes a virtual source manipulation mechanism that positions the virtual source. The manipulation mechanism has a center of lateral pivot approximately coincident with a lateral index and a center of vertical pivot approximately coincident with a vertical index. The vertical index and lateral index intersect at an index origin. The virtual source and manipulation mechanism auto align the orientation line through the index origin during virtual source motion.

Scott, Jill R. (Idaho Falls, ID); Tremblay, Paul L. (Idaho Falls, ID)

2008-08-19T23:59:59.000Z

312

Applications of Robust, Radiation Hard AlGaN Optoelectronic Devices in Space Exploration and High Energy Density Physics  

SciTech Connect (OSTI)

This slide show presents: space exploration applications; high energy density physics applications; UV LED and photodiode radiation hardness; UV LED and photodiode space qualification; UV LED AC charge management; and UV LED satellite payload instruments. A UV LED satellite will be launched 2nd half 2012.

Sun, K.

2011-05-04T23:59:59.000Z

313

Large grain Ge growth on amorphous substrates for CMOS back-end-of-line integration of active optoelectronic devices  

E-Print Network [OSTI]

The electronic-photonic integrated circuit (EPIC) has emerged as a leading technology to surpass the interconnect bottlenecks that threaten to limit the progress of Moore's Law in microprocessors. Compared to conventional ...

Pearson, Brian (Brian Sung-Il)

2012-01-01T23:59:59.000Z

314

Mobile Device Guide Google Android based devices  

E-Print Network [OSTI]

Mobile Device Guide ­ Google Android based devices CSUF Date Last Revised: 1/20/11 Page 1 of 3;Mobile Device Guide ­ Google Android based devices CSUF Date Last Revised: 1/20/11 Page 2 of 3 2. Under' with your campus username and enter your password (case sensitive). 4. Tap `next'. #12;Mobile Device Guide

de Lijser, Peter

315

Brain Bases of Reading Fluency in Typical Reading and Impaired Fluency in Dyslexia  

E-Print Network [OSTI]

Although the neural systems supporting single word reading are well studied, there are limited direct comparisons between typical and dyslexic readers of the neural correlates of reading fluency. Reading fluency deficits ...

Christodoulou, Joanna

316

Mathematical Modeling of Semiconductor Devices  

E-Print Network [OSTI]

fibers. · Optoelectronic emitters convert an electronic signal into light. Examples are light-emitting diodes (LED) used in displays and indication lambs and semiconductor lasers used in compact disk systems

Jüngel, Ansgar

317

Electrochromic device  

DOE Patents [OSTI]

An electrochromic device includes a first substrate spaced from a second substrate. A first conductive member is formed over at least a portion of the first substrate. A first electrochromic material is formed over at least a portion of the first conductive member. The first electrochromic material includes an organic material. A second conductive member is formed over at least a portion of the second substrate. A second electrochromic material is formed over at least a portion of the second conductive member. The second electrochromic material includes an inorganic material. An ionic liquid is positioned between the first electrochromic material and the second electrochromic material.

Schwendemanm, Irina G. (Wexford, PA); Polcyn, Adam D. (Pittsburgh, PA); Finley, James J. (Pittsburgh, PA); Boykin, Cheri M. (Kingsport, TN); Knowles, Julianna M. (Apollo, PA)

2011-03-15T23:59:59.000Z

318

OLED devices  

DOE Patents [OSTI]

An OLED device having an emission layer formed of an ambipolar phosphine oxide host material and a dopant, a hole transport layer in electrical communication with an anode, an electron transport layer in communication with a cathode, wherein the HOMO energy of the hole transport layer is substantially the same as the HOMO energy of the ambipolar host in the emission layer, and the LUMO energy of the electron transport layer is substantially the same as the LUMO energy of the ambipolar host in the emission layer.

Sapochak, Linda Susan [Arlington, VA; Burrows, Paul Edward [Kennewick, WA; Bimalchandra, Asanga [Richland, WA

2011-02-22T23:59:59.000Z

319

Diversionary device  

DOE Patents [OSTI]

A diversionary device has a housing having at least one opening and containing a non-explosive propellant and a quantity of fine powder packed within the housing, with the powder being located between the propellant and the opening. When the propellant is activated, it has sufficient energy to propel the powder through the opening to produce a cloud of powder outside the housing. An igniter is also provided for igniting the cloud of powder to create a diversionary flash and bang, but at a low enough pressure to avoid injuring nearby people.

Grubelich, Mark C. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

320

Control device for vehicle speed  

SciTech Connect (OSTI)

This patent describes a control device for vehicle speed comprising: a throttle driving means operatively coupled to a throttle valve of a vehicle; a set switch means for commanding memorization of the vehicle speed; a resume switch means for commanding read of the vehicle speed; a vehicle speed detecting means for generating a signal in accordance with the vehicle speed; a vehicle speed memory; an electronical control means for memorizing in the vehicle speed memory vehicle speed information corresponding to the signal obtained from the vehicle speed detecting means in response to actuation of the set switch means. The control means is also for reading out the content of the vehicle speed memory in response to actuation of the resume switch means to control the throttle driving means in accordance with the read-out content; a power supply means for supplying power to the electronical control means; and a power supply control switch means for controlling supply of power to the electronical control means in response to the state of at least one of the set switch means and the resume switch means and the state of the electronical control means. The improvement described here comprises the electronical control means sets the power supply control switch means into such a state that supply of power to the electronical control means is turned OFF, when vehicle speed information is not memorized in the vehicle speed memory.

Kawata, S.; Hyodo, H.

1987-03-03T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Interconnector device  

SciTech Connect (OSTI)

This patent describes an interconnector device that allows a lithium-type battery to be substituted for a Leclanche battery. The Leclanche battery is of predetermined dimensions and has a pair of coil spring connection terminals at predetermined locations on the top surface thereof. The lithium battery of different predetermined dimensions than the Lechanche battery and has a pair of female connection sockets positioned at a predetermined off-center location on the top surface. The locations of the coil spring terminals and the connection sockets of the respective batteries are at substantially different non-matching positions, comprising a thin flat water of non-conducive material of predetermined size and configuration, the wafer having the same cross-section dimensions as the Leclanche battery. A pair of prongs on the underside surface of the wafer and at locations correspond to the locations of the female connection sockets of the lithium battery. The prongs received into the female connection sockets when the interconnector device is mounted on the lithium batter. A pair of coil spring connection terminals mounted on the opposite of top surface of the wafer and having a configuration which matches that of the connection terminals of the Leclanche battery and positioned at locations which corresponds to the locations of the coil spring connection terminals of the Leclanche battery. A pair of electrical conductors plated on the underside surface of the wafer for respectively interconnecting the pairs of prongs and the pair of coil spring connection terminals in parallel.

Christopulos, J.A.

1987-07-07T23:59:59.000Z

322

Charge separation dynamics and opto-electronic properties of a diaminoterephthalate- C 60 diad  

E-Print Network [OSTI]

A novel diad composed of a diaminoterephthalate scaffold, covalently linked to a Fullerene derivative, is explored as a nanosized charge separation unit powered by solar energy. Its opto-electronic properties are studied and the charge separation rate is determined. Simulations of the coupled electronic and nuclear dynamics in the Ehrenfest approximation are carried out ona sub 100 fs time scale after photoexcitation in order to gain insights about the mechanisms driving the the charge separation. In particular, the role of vibronic coupling and of the detailed morphology are highlighted.

Pittalis, Stefano; Robin, Jrg; Freimuth, Lena; Christoffers, Jens; Rozzi, Christoph Lienaua nd Carlo Andrea

2014-01-01T23:59:59.000Z

323

Experimental Observations of Group Synchrony in a System of Chaotic Optoelectronic Oscillators  

E-Print Network [OSTI]

We experimentally demonstrate group synchrony in a network of four nonlinear optoelectronic oscillators with time-delayed coupling. We divide the nodes into two groups of two each, by giving each group different parameters and by enabling only inter-group coupling. When coupled in this fashion, the two groups display different dynamics, with no isochronal synchrony between them, but the nodes in a single group are isochronally synchronized, even though there is no intra-group coupling. We compare experimental behavior with theoretical and numerical results.

Caitlin R. S. Williams; Thomas E. Murphy; Rajarshi Roy; Francesco Sorrentino; Thomas Dahms; Eckehard Schll

2013-03-27T23:59:59.000Z

324

On-chip high speed localized cooling using superlattice microrefrigerators  

E-Print Network [OSTI]

cooling, microrefrigerators, optoelectronics, superlattice,in high power, high-speed optoelectronics devices, and

Zhang, Y; Christofferson, J; Shakouri, A; Zeng, G H; Bowers, J E; Croke, E T

2006-01-01T23:59:59.000Z

325

Method of forming crystalline silicon devices on glass  

DOE Patents [OSTI]

A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

McCarthy, A.M.

1995-03-21T23:59:59.000Z

326

Method of forming crystalline silicon devices on glass  

DOE Patents [OSTI]

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

McCarthy, Anthony M. (Menlo Park, CA)

1995-01-01T23:59:59.000Z

327

Advanced Reading Workshop | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Advanced Reading Workshop Advanced Reading Workshop Advanced Reading Workshop October 22, 2013 8:30AM EDT to October 23, 2013 4:00PM EDT Registration link: CHRIS (002227/0006) $200 Course type: Classroom Course Location: DOE Headquarters, Forrestal Building, Washington, DC/ Room GH-043 Course Description: This workshop is designed to increase the reading rate of the average person from 2 to 5 times. There can be marked improvement in the areas of concentration, accuracy, retention and study skills for participants. This hands on learn-by-doing course is geared to all phases of reading, from light reading to in-depth study. Old "Dick and Jane" reading habits will be replaced with new phase reading skills achieved by a variety of eye-brain exercises to widen the span of perception, develop

328

Classified Reading Room Instructions/Guidelines  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Classified Reading Room Instructions/Guidelines Classified Reading Room Instructions/Guidelines * Reading Room Points of Contact: Milesha Grier, (202) 586-8210, milesha.gier@nnsa.doe.gov Reading Room Location: DOE Forrestal Building, 1000 Independence Ave., Washington, D.C. Room 4A-045, 4 th Floor, "A" Corridor, Behind Glass Doors, dial 6-8210 Reading Room Availability: By Appointment - Reading Room will be available until RFP Closes except (12/5/11 thru 12/16/11, December 23, January 2, 2012 and January 16, 2012). Reading Room Hours: Morning, 9:00 a.m. - 11:30 a.m.; and Afternoon 1:00 p.m. - 3:30 p.m. Reading Room Will Accommodate: Up to 5-6 people * All personnel must: a. submit a formal Intent to Bid IAW Section L of the RFP, via email to: SEB1@doeal.gov

329

ReadFromWeb := proc (URL  

E-Print Network [OSTI]

>> >> (2)(2) >> >> >> >> >> (1)(1) >> ReadFromWeb := proc (URL::string, { printfile [ m + 1 . . n ] ) e n d i f o d : end proc: ReadFromWeb("http://www.math.sunysb.edu/~scott/mat331. spr

Sutherland, Scott

330

A Nano Surface Icephobic Coating Delays Ice Formation | GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

health-monitoring sensors, non-icing surfaces, nano-enabled media storage and optoelectronic devices. She enjoys time with her son, exercise and reading. Recent Posts by This...

331

Module 4Module 4 CPU SchedulingCPU Scheduling Reading: Chapter 5Reading: Chapter 5Reading: Chapter 5Reading: Chapter 5  

E-Print Network [OSTI]

to execute, and then give the control to it If we want efficient resource utilization, we need CPU scheduling preemptive scheduling? DispatcherDispatcher Dispatcher module gives control of the CPU to the process1 Module 4Module 4 ­­ CPU SchedulingCPU Scheduling Reading: Chapter 5Reading: Chapter 5Reading

Stojmenovic, Ivan

332

Reading the Data at Fermilab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Reading the Data at Fermilab Reading the Data at Fermilab Searching for the answers to the questions we ask. And what will be the tools, to help us with our task? . . . Detectors, computers and human intuition, combining together making sense of these collisions. Seeking out these mysteries is what we try to do. This is just the start, the rest is up to you! Lyrics from the video Accelerating Science This is the last of an article in the series that has traveled through the stages of physics research at Fermilab. In this article we try to understand how the data from the detectors is used. Data that speeds through the detectors at a rate of 5,000,000 photons per second need a great deal of filtering and continuous monitoring. Physicists need to capture approximately 50,000 events per second for study. Of

333

Public Reading Room: Environmental Documents, Reports  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Public Reading Room: Environmental Documents, Reports Public Reading Room: Environmental Documents, Reports Public Reading Room: Environmental Documents, Reports Environmental documents and reports are available online. Hard copies are available at the Laboratory's Public Reading Room in Pojoaque, New Mexico. Contact Environmental Communication & Public Involvement P.O. Box 1663 MS M996 Los Alamos, NM 87545 (505) 667-0216 Email Public Reading Room: Environmental Documents, Reports Online Annual Environmental Report Electronic Public Reading Room (EPRR) Plans, Procedures A listing of procedures available in the EPRR Hard copy Public Reading Room 94 Cities of Gold Road Pojoaque, NM Vie Screen reader users: click here for plain HTML Go to Google Maps Home 94 cities of gold Road, Pojoaque, NM Loading... Map Sat Ter Did you mean a different:

334

Optoelectronic Interconnects XIII (OE112) Conference Chairs: Alexei L. Glebov, OptiGrate Corp. (USA); Ray T. Chen, The Univ.  

E-Print Network [OSTI]

Optoelectronic Interconnects XIII (OE112) Conference Chairs: Alexei L. Glebov, OptiGrate Corp. (USA); Ray T. Chen, The Univ. of Texas at Austin (USA) Program Committee: Bill Blubaugh, US Conec Ltd. (USA); Swapnajit Chakravarty, Omega Optics, Inc. (USA); John E. Cunningham, Oracle (USA); Allen M. Earman, Intersil

Jahns, Jürgen

335

Connector device for building integrated photovoltaic device  

SciTech Connect (OSTI)

The present invention is premised upon a connector device and method that can more easily electrically connect a plurality of PV devices or photovoltaic system components and/or locate these devices/components upon a building structure. It also may optionally provide some additional sub-components (e.g. at least one bypass diode and/or an indicator means) and may enhance the serviceability of the device.

Keenihan, James R.; Langmaid, Joseph A.; Eurich, Gerald K.; Lesniak, Michael J.; Mazor, Michael H.; Cleereman, Robert J.; Gaston, Ryan S.

2014-06-03T23:59:59.000Z

336

Simulation of nanostructure-based and ultra-thin film solar cell devices beyond the classical picture  

E-Print Network [OSTI]

In this paper, an optoelectronic device simulation framework valid for arbitrary spatial variation of electronic potentials and optical modes, and for transport regimes ranging from ballistic to diffusive, is used to study non-local photon absorption, photocurrent generation and carrier extraction in ultra-thin film and nanostructure-based solar cell devices at the radiative limit. Among the effects that are revealed by the microscopic approach and which are inaccessible to macroscopic models is the impact of structure, doping or bias induced nanoscale potential variations on the local photogeneration rate and the photocarrier transport regime.

Aeberhard, Urs

2014-01-01T23:59:59.000Z

337

FOIA Reading Room - privacy act  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Reading Room - pricacy act Reading Room - pricacy act CH Frequently Requested Documents Under FOIA Administrative Electronic FOIA Form Privacy Act Advisory (Microsoft Word(tm) document) DOE-CH Government Purchase Card Cardholders: December 2012 CH Organizational Chart: Current Version Policies and Procedures - Office of Science (including Chicago Office) Office of Hearings and Appeals Decisions Department of Justice Cases and Legal Documents Department of Energy Directives DOE Office of Inspector General Reports Responses Under FOIA FY10 Management and Operating Contracts "FY2012 Laboratory Performance Report Cards" The following management and operating prime contracts under the jurisdiction of DOE-CH have been renewed and posted for your convenience. Modifications that change, delete, or add language to any portion of these contracts (referred to as "M" Mods) will be posted as expeditiously as possible after execution. It is at the discretion of the Contractors whether or not they include modifications that change the amount obligated by the Government. Ames Laboratory - Contract No. No.DE-AC02-07CH11358

338

NEPA Reading Room | National Nuclear Security Administration  

National Nuclear Security Administration (NNSA)

Reading Room | National Nuclear Security Administration Reading Room | National Nuclear Security Administration Our Mission Managing the Stockpile Preventing Proliferation Powering the Nuclear Navy Emergency Response Recapitalizing Our Infrastructure Continuing Management Reform Countering Nuclear Terrorism About Us Our Programs Our History Who We Are Our Leadership Our Locations Budget Our Operations Media Room Congressional Testimony Fact Sheets Newsletters Press Releases Speeches Events Social Media Video Gallery Photo Gallery NNSA Archive Federal Employment Apply for Our Jobs Our Jobs Working at NNSA Blog NEPA Reading Room Home > About Us > Our Operations > NNSA Office of General Counsel > National Environmental Policy Act (NEPA) > NEPA Reading Room NEPA Reading Room Welcome to the National Nuclear Security Administration's NEPA Reading

339

Reading Room | National Nuclear Security Administration  

National Nuclear Security Administration (NNSA)

Reading Room | National Nuclear Security Administration Reading Room | National Nuclear Security Administration Our Mission Managing the Stockpile Preventing Proliferation Powering the Nuclear Navy Emergency Response Recapitalizing Our Infrastructure Continuing Management Reform Countering Nuclear Terrorism About Us Our Programs Our History Who We Are Our Leadership Our Locations Budget Our Operations Media Room Congressional Testimony Fact Sheets Newsletters Press Releases Speeches Events Social Media Video Gallery Photo Gallery NNSA Archive Federal Employment Apply for Our Jobs Our Jobs Working at NNSA Blog The National Nuclear Security Administration Reading Room Home > About Us > Our Operations > Acquisition and Project Management > Major Contract Solicitations > Environmental Program Services Contract > Reading Room

340

2014 Mini University Suggested Reading List  

E-Print Network [OSTI]

1 2014 Mini University Suggested Reading List The Arts Jonathan Michaelsen, and the Great Recession Bruce, Joshua, R. "Uniting Theories of Morality, Religion, and Social Interaction: Grid

Polly, David

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Reading Enterprise Hub | Open Energy Information  

Open Energy Info (EERE)

Sector: Services Product: General Financial & Legal Services ( Academic Research foundation ) References: Reading Enterprise Hub1 This article is a stub. You can help OpenEI...

342

TruRead | Open Energy Information  

Open Energy Info (EERE)

Product: Provides integrated services for end-to-end collection and delivery of meter readings. Coordinates: 44.18318, -123.304654 Loading map... "minzoom":false,"mapp...

343

Contracting with reading costs and renegotiation costs  

E-Print Network [OSTI]

OF CALIFORNIA, SAN DIEGO Contracting with Reading Costs andrents, and the competitive contracting process. Journal ofReiche. Foundation of incomplete contracting in a model of

Brennan, James R.

2007-01-01T23:59:59.000Z

344

Reading with fixed and variable character pitch  

Science Journals Connector (OSTI)

We compared the effects of fixed and variable (proportional) spacing on reading speeds and found variable pitch to yield better performance at medium and large character sizes and...

Arditi, Aries; Knoblauch, Kenneth; Grunwald, Ilana

1990-01-01T23:59:59.000Z

345

Three interrelated problems in reading: A review  

Science Journals Connector (OSTI)

In this review, three interrelated problems are discussed with respect to reading. ... , but rather by some sort of interactive process permitting the extraction of higher order distinctive...

John L. Bradshaw

1975-03-01T23:59:59.000Z

346

Reading and Listening to Music Increase Resting Energy Expenditure during an Indirect Calorimetry Test  

Science Journals Connector (OSTI)

Abstract Indirect calorimetry is often done early in the morning in a fasting state, with the subject unshowered and abstained from caffeine or other stimulants. Subjects often fall asleep, resulting in measurement of a sleeping metabolic rate rather than a resting metabolic rate. The objective of this study was to determine whether listening to self-selected relaxing music or reading an electronic device or magazine affects resting energy expenditure (REE) during measurement in healthy adults. A randomized trial comparing three different conditions (ie, resting, reading, and listening to music) wasperformed. Sixty-five subjects (36 female and 29 male) were used in final dataanalysis. Inclusion criteria included healthy subjects between the ages of 18 and 50years with a stable weight. Exclusion criteria included pregnant or lactating women or use of medications known to affect metabolism. Results showed that reading either amagazine or an electronic device significantly increased REE by 102.7 kcal/day when compared with resting (Pdevice and magazine. Listening to self-selected relaxing music increased REE by 27.6 kcal/day compared with rest (P=0.0072). Based on our results, we recommend subjects refrain from reading a magazine or electronic device during an indirect calorimetry test. Whether or not the smaller difference found while listening to music ispractically significant would be a decision for the indirect calorimetry test administrator.

Blaire Snell; Susan Fullmer; Dennis L. Eggett

2014-01-01T23:59:59.000Z

347

Energize Your Students to Read  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Grade K-3 Energy art choo Overvie� for Activity One This activity introduces younger students to the basic concept of energy and its impact on the environment. Terms like stored energy, working energy, electricity, energy efficiency, renewable energy, nonrenewable energy, and global climate change are briefly explored through an in-class presentation. These concepts are reinforced in a bookmark coloring project. eve Grades K-3 u ect * Reading * Science once t * Energy is the ability to do work. * Energy can be categorized as stored energy and working energy. * Nonrenewable energy will run out eventually. * Renewable energy is expected to last for a long time. * Using less energy from nonrenewable fossil fuels reduces air pollution.

348

JAN Topic Reading(s) Study / Discussion Question 18 Intro, HLHP  

E-Print Network [OSTI]

RE189 Page 1 JAN Topic Reading(s) Study / Discussion Question 18 Intro, HLHP 20 Intro 23 Judaism 25, Judaism (chapter 7, entire) What does Prothero identify as the "problem" in Judaism? How does Judaism father? What role does religion play in the lives of each character? Read Marks, Ch 8, and "Life Rite

Stephens, Matthew

349

DOE-ID FOIA Reading Room  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Reading Room Reading Room READING ROOM Eectronic Freedom of Information Act, E-FOIA RECORDS UNDER THE E-FOIA The Electronic Freedom of Information Act Amendments of 1996 addresses the issues and procedural aspects of FOIA administration. The amendment: defines the term "record" as including "any information that would be an agency record subject to the requirements of the FOIA when maintained by an agency in any format, including an electronic format; addresses the form or format in which a requested record is disclosed providing the record is readily reproducible by the agency in the requestor's desired form or format; directs Federal agencies to maintain both conventional reading rooms and electronic reading rooms to meet FOIA responsibilities.

350

Public Reading Facilities | National Nuclear Security Administration  

National Nuclear Security Administration (NNSA)

Reading Facilities | National Nuclear Security Administration Reading Facilities | National Nuclear Security Administration Our Mission Managing the Stockpile Preventing Proliferation Powering the Nuclear Navy Emergency Response Recapitalizing Our Infrastructure Continuing Management Reform Countering Nuclear Terrorism About Us Our Programs Our History Who We Are Our Leadership Our Locations Budget Our Operations Media Room Congressional Testimony Fact Sheets Newsletters Press Releases Speeches Events Social Media Video Gallery Photo Gallery NNSA Archive Federal Employment Apply for Our Jobs Our Jobs Working at NNSA Blog Public Reading Facilities Home > About Us > Our Operations > NNSA Office of General Counsel > Freedom of Information Act (FOIA) > Public Reading Facilities Public Reading Facilities The FOIA and E-FOIA require that specific types of records as well as

351

Polynomial law for controlling the generation of n-scroll chaotic attractors in an optoelectronic delayed oscillator  

E-Print Network [OSTI]

Controlled transitions between a hierarchy of n-scroll attractors are investigated in a nonlinear optoelectronic oscillator. Using the system's feedback strength as a control parameter, it is shown experimentally the transition from Van der Pol-like attractors to 6-scroll, but in general, this scheme can produce an arbitrary number of scrolls. The complexity of every state is characterized by Lyapunov exponents and autocorrelation coefficients.

Bicky A. Mrquez; Jos J. Surez-Vargas; Javier A. Ramrez

2014-08-23T23:59:59.000Z

352

Accounting for Localized Defects in the Optoelectronic Design of Thin-Film Solar Cells  

E-Print Network [OSTI]

Thin-film silicon solar cell technology," Progress insolar cells: modeling, materials and device technology.technologies competitive with traditional wafer based solar cells,

Deceglie, Michael G.

2014-01-01T23:59:59.000Z

353

Comparative ab initio study of half-Heusler compounds for optoelectronic applications  

Science Journals Connector (OSTI)

For the advancement of optoelectronic applications, such as thin-film solar cells or laser diodes, there is a strong demand for new semiconductor materials with tailored structural and electronic properties. The eight-electron half-Heusler compounds include many promising materials with a big variety of lattice constants and band gaps. So far only a small number of them have been investigated. With the help of ab initio calculations, we have studied all possible configurations of ternary 1:1:1 compounds in the half-Heusler structure. We have investigated 648 half-Heusler materials, including compounds of the types I-I-VI, I-II-V, I-III-IV, II-II-IV, and II-III-III. For all compounds, we have optimized the lattice constant and determined the most stable arrangement of elements on the half-Heusler lattice sites. Preferred configurations and semiconductivities are compared for the different half-Heusler types. A discussion of the lattice geometries provides a parameter-free function for estimating the lattice constants. The calculated band gaps and lattice constants are used to select potential substitute materials for CdS in the buffer layer of CuInSe2 and Cu(In,Ga)Se2 thin-film solar cells.

Thomas Gruhn

2010-09-30T23:59:59.000Z

354

Man's Best Friend as a Reading Facilitator  

E-Print Network [OSTI]

and fuzzy program (Friesen, 2009). Small-scale studies of R.E.A.D. have consistently shown that R.E.A.D. improves students reading skill and motivation (Heyer, 2007; Martin, 2001). Heyer (2007), who was enrolled in a masters program with an emphasis..., address sanitation concerns. Ninth, inform colleagues, staff and families about the program. Tenth, prepare children and staff with an informative session. Eleventh, plan for the dogs safety and well-being. Twelfth, decide how expansive the program...

Shaw, Donita J.

2013-01-01T23:59:59.000Z

355

Title Author(s) Year Published Category Analysis and Design of Analog Integrated Circuits, Third Edition Gray; Meyer 1993 Circuits  

E-Print Network [OSTI]

Optics Terahertz Optoelectronics Sakai 2005 Optics / Laser Optics Advanced Optoelectronic Devices Dragoman; Dragoman 1999 Optoelectronic Devices / Packaging Optical Integrated Circuits Nishihara; Haruna; Suhara 1989 Optoelectronic Devices / Packaging Optical Networks, Second Edition Ramaswami; Sivarajan 2002

Huang, Zhaoran "Rena"

356

Bipolar thermoelectric devices  

E-Print Network [OSTI]

The work presented here is a theoretical and experimental study of heat production and transport in bipolar electrical devices, with detailed treatment of thermoelectric effects. Both homojunction and heterojunction devices ...

Pipe, Kevin P. (Kevin Patrick), 1976-

2004-01-01T23:59:59.000Z

357

Pulse flux measuring device  

DOE Patents [OSTI]

A device for measuring particle flux comprises first and second photodiode detectors for receiving flux from a source and first and second outputs for producing first and second signals representing the flux incident to the detectors. The device is capable of reducing the first output signal by a portion of the second output signal, thereby enhancing the accuracy of the device. Devices in accordance with the invention may measure distinct components of flux from a single source or fluxes from several sources.

Riggan, William C. (Albuquerque, NM)

1985-01-01T23:59:59.000Z

358

Pulse detecting device  

DOE Patents [OSTI]

A device for measuring particle flux comprises first and second photodiode detectors for receiving flux from a source and first and second outputs for producing first and second signals representing the flux incident to the detectors. The device is capable of reducing the first output signal by a portion of the second output signal, thereby enhancing the accuracy of the device. Devices in accordance with the invention may measure distinct components of flux from a single source or fluxes from several sources.

Riggan, W.C.

1984-01-01T23:59:59.000Z

359

Reading the Cosmic Writing on the Wall  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Reading the Cosmic Reading the Cosmic Writing on the Wall Reading the Cosmic Writing on the Wall NERSC Key to Planck's Revision of Universal Recipe March 21, 2013 Contact: Margie Wylie, mwylie@lbl.gov, + 1 510 486 7421 map800-600.jpg This map shows the oldest light in our universe, as detected with the greatest precision yet by the Planck mission. The ancient light, called the cosmic microwave background, was imprinted on the sky when the universe was 370,000 years old. (Image credit: ESA and the Planck Collaboration) Thanks to a supersensitive space telescope and some sophisticated supercomputing, scientists from the international Planck collaboration have made the closest reading yet of the most ancient story in our universe: the cosmic microwave background (CMB). Today, the team released preliminary results based on the Planck

360

Golden Reading Room: FINAL Environmental Impact Statements  

Broader source: Energy.gov [DOE]

Below are electronic versions of Golden Field Office Reading Room documents that were created after November 1, 1996, per the requirements of the Electronic Freedom of Information Act Amendment of...

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Golden Reading Room: FOIA Frequently Requested Documents  

Office of Energy Efficiency and Renewable Energy (EERE)

Below are electronic versions of Golden Field Office Reading Room documents that were created after November 1, 1996, per the requirements of the Electronic Freedom of Information Act Amendment of...

362

Golden Reading Room: Other NREL Documents  

Broader source: Energy.gov [DOE]

Below are electronic versions of Golden Field Office Reading Room documents that were created after November 1, 1996, per the requirements of the Electronic Freedom of Information Act Amendment of...

363

Golden Reading Room: Other NEPA Documents  

Office of Energy Efficiency and Renewable Energy (EERE)

Below are electronic versions of Golden Field Office Reading Room documents that were created after November 1, 1996, per the requirements of the Electronic Freedom of Information Act Amendment of...

364

Articulating feedstock delivery device  

DOE Patents [OSTI]

A fully articulable feedstock delivery device that is designed to operate at pressure and temperature extremes. The device incorporates an articulating ball assembly which allows for more accurate delivery of the feedstock to a target location. The device is suitable for a variety of applications including, but not limited to, delivery of feedstock to a high-pressure reaction chamber or process zone.

Jordan, Kevin

2013-11-05T23:59:59.000Z

365

Apparatus And Method Of Using Flexible Printed Circuit Board In Optical Transceiver Device  

DOE Patents [OSTI]

This invention relates to a flexible printed circuit board that is used in connection with an optical transmitter, receiver or transceiver module. In one embodiment, the flexible printed circuit board has flexible metal layers in between flexible insulating layers, and the circuit board comprises: (1) a main body region orientated in a first direction having at least one electrical or optoelectronic device; (2) a plurality of electrical contact pads integrated into the main body region, where the electrical contact pads function to connect the flexible printed circuit board to an external environment; (3) a buckle region extending from one end of the main body region; and (4) a head region extending from one end of the buckle region, and where the head region is orientated so that it is at an angle relative to the direction of the main body region. The electrical contact pads may be ball grid arrays, solder balls or land-grid arrays, and they function to connect the circuit board to an external environment. A driver or amplifier chip may be adapted to the head region of the flexible printed circuit board. In another embodiment, a heat spreader passes along a surface of the head region of the flexible printed circuit board, and a window is formed in the head region of the flexible printed circuit board. Optoelectronic devices are adapted to the head spreader in such a manner that they are accessible through the window in the flexible printed circuit board.

Anderson, Gene R. (Albuquerque, NM); Armendariz, Marcelino G. (Albuquerque, NM); Bryan, Robert P. (Albuquerque, NM); Carson, Richard F. (Albuquerque, NM); Duckett, III, Edwin B. (Albuquerque, NM); McCormick, Frederick B. (Albuquerque, NM); Peterson, David W. (Sandia Park, NM); Peterson, Gary D. (Albuquerque, NM); Reysen, Bill H. (Lafayette, CO)

2005-03-15T23:59:59.000Z

366

Controlled growth of larger heterojunction interface area for organic photosensitive devices  

DOE Patents [OSTI]

An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.

Yang, Fan (Somerset, NJ); Forrest, Stephen R. (Ann Arbor, MI)

2009-12-29T23:59:59.000Z

367

Photovoltaic device on a single ZnO nanowire pn homojunction  

Science Journals Connector (OSTI)

A photovoltaic device was successfully grown solely based on the single ZnO pn homojunction nanowire. The ZnO nanowire pn diode consists of an as-grown n-type segment and an insitu arsenic-doped p-type segment. This pn homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions. Our results demonstrate that the present ZnO pn homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nanoscale electronic, optoelectronic and medical devices.

Hak Dong Cho; Anvar S Zakirov; Shavkat U Yuldashev; Chi Won Ahn; Yung Kee Yeo; Tae Won Kang

2012-01-01T23:59:59.000Z

368

Mobile Device Guide Apple iPhone Devices  

E-Print Network [OSTI]

Mobile Device Guide ­ Apple iPhone Devices CSUF Date Last Revised: 1/20/11 Page 1 of 3 ConnectingPhone desktop. 1a. Expand `Mail, Contacts, Calendars' as shown. #12;Mobile Device Guide ­ Apple iPhone Devices (case sensitive). 4. Tap `next'. #12;Mobile Device Guide ­ Apple iPhone Devices CSUF Date Last Revised

de Lijser, Peter

369

Instructions for using read_cips_file.sav to read CIPS data files Last updated 29 June 2011  

E-Print Network [OSTI]

Instructions for using read_cips_file.sav to read CIPS data files Last updated 29 June 2011 The file read_cips_file.sav is provided as a convenience for IDL users to read CIPS netcdf data files for levels 2 (orbit strips) and 3a (daily daisies). (1) Download the CIPS data files into a convenient

Mojzsis, Stephen J.

370

Barrier breaching device  

DOE Patents [OSTI]

A barrier breaching device that is designed primarily for opening holes in interior walls of buildings uses detonating fuse for explosive force. The fuse acts as the ribs or spokes of an umbrella-like device that may be opened up to form a cone. The cone is placed against the wall so that detonating fuse that rings the base of the device and which is ignited by the spoke-like fuses serves to cut a circular hole in the wall.

Honodel, Charles A. (Tracy, CA)

1985-01-01T23:59:59.000Z

371

Barrier breaching device  

DOE Patents [OSTI]

A barrier breaching device that is designed primarily for opening holes in interior walls of buildings uses detonating fuse for explosive force. The fuse acts as the ribs or spokes of an umbrella-like device that may be opened up to form a cone. The cone is placed against the wall so that detonating fuse that rings the base of the device and which is ignited by the spoke-like fuses serves to cut a circular hole in the wall.

Honodel, C.A.

1983-06-01T23:59:59.000Z

372

Active Terahertz Metamaterial Devices  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Active Terahertz Metamaterial Devices Active Terahertz Metamaterial Devices Active Terahertz Metamaterial Devices Metamaterial structures are taught which provide for the modulation of terahertz frequency signals. Available for thumbnail of Feynman Center (505) 665-9090 Email Active Terahertz Metamaterial Devices Metamaterial structures are taught which provide for the modulation of terahertz frequency signals. Each element within an array of metamaterial (MM) elements comprises multiple loops and at least one gap. The MM elements may comprise resonators with conductive loops and insulated gaps, or the inverse in which insulated loops are present with conductive gaps; each providing useful transmissive control properties. The metamaterial elements are fabricated on a semiconducting substrate configured with a

373

Composite Thermoelectric Devices  

Broader source: Energy.gov [DOE]

Composite thermoelectric devices incorporating common conductors laminated between P- and N-type thermoelectric plates demonstrate internal ohmic loss reduction and enhanced performance

374

3.46 Photonic Materials and Devices, Spring 2004  

E-Print Network [OSTI]

Optical and optoelectronic properties of semiconductors, ceramics, and polymers. Electronic structure, refractive index, electroluminescence, electro-optic and magneto-optic effects, and laser phenomena. Microphotonic ...

Kimerling, Lionel C.

375

Mobile Device Management Android Device Enrollment  

E-Print Network [OSTI]

to manage your device. c. Enter your password. #12;d. Accept the Terms and Conditions e. You have completed. 2. Get Touchdown from Google Play a. Open up the Google Play Store. b. Search for Touchdown. c. Use the application. #12;3. Get Citrix Mobile Connect from Google Play a. Open up the Google Play Store. b. Search

376

Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications  

DOE Patents [OSTI]

Disclosed is an illumination source comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

Tam, S.W.

1997-02-25T23:59:59.000Z

377

Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications  

DOE Patents [OSTI]

An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

Tam, Shiu-Wing (Downers Grove, IL)

1997-01-01T23:59:59.000Z

378

Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications  

DOE Patents [OSTI]

An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

Tam, Shiu-Wing (Downers Grove, IL)

1998-01-01T23:59:59.000Z

379

Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications  

DOE Patents [OSTI]

An illumination source is disclosed comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

Tam, S.W.

1998-06-16T23:59:59.000Z

380

Self-actuated device  

DOE Patents [OSTI]

A self-actuated device, of particular use as a valve or an orifice for nuclear reactor fuel and blanket assemblies, in which a gas produced by a neutron induced nuclear reaction gradually accumulates as a function of neutron fluence. The gas pressure increase occasioned by such accumulation of gas is used to actuate the device.

Hecht, Samuel L. (Richland, WA)

1984-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Zinc Oxide Based Nonvolatile Memories and Random Lasers  

E-Print Network [OSTI]

2013). [41] 2010 Optoelectronics Market Report. Databeans,studied. The ZnO based optoelectronics devices are studiedmethods [7]. For many optoelectronics and microelectronics

Huang, Jian

2013-01-01T23:59:59.000Z

382

Stability and Transport of Novel Engineered Nanomaterials in Aqueous and Subsurface Environments  

E-Print Network [OSTI]

M. S. , Electronics and optoelectronics of two-dimensionalM. S. , Electronics and optoelectronics of two-dimensionalto be incorporated into optoelectronics devices (12). Other

Lanphere, Jacob Delano

2014-01-01T23:59:59.000Z

383

Preprint of M. B. Yairi, C. W. Coldren, D. A. B. Miller, and J. S. Harris, Jr."High-Speed Quantum Well Optoelectronic Gate Based on Diffusive Conduction Recovery," in Optics in Computing '98, Pierre Chavel, David A. B. Miller, Hugo Thienpont,  

E-Print Network [OSTI]

Well Optoelectronic Gate Based on Diffusive Conduction Recovery," in Optics in Computing '98, Pierre-Speed Quantum Well Optoelectronic Gate Based on Diffusive Conduction Recovery M. B. Yairi, C. W. Coldren*, D. A-4085, USA *Solid State Laboratory, Stanford University Abstract A novel high-speed optoelectronic gate

Miller, David A. B.

384

Pulse charging device  

SciTech Connect (OSTI)

This paper describes a device for pulse charging of capacitor storage devices of high-power nanosecond generators. The charging voltage reaches 30 kV, the charged capacitance is 2-100 nF, the charging time is 5-10 usec, the pulse frequency reaches 10 kHz, and the average power of the device is 15 kW. The device uses two-section oscillatory charging of the capacitors from a dc supply through high-speed thyristors and a pulse transformer. The described device is intended for use as part of a test bench for high-power nanosecond pulse generators for pumping gas lasers and their components.

Butakov, L.D.; Dubich, V.K.; Lashuk, N.A.; Shubkin, N.G.; Vizir', V.A.

1986-03-01T23:59:59.000Z

385

Fluidic nanotubes and devices  

DOE Patents [OSTI]

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Yang, Peidong (El Cerrito, CA); He, Rongrui (El Cerrito, CA); Goldberger, Joshua (Berkeley, CA); Fan, Rong (El Cerrito, CA); Wu, Yiying (Albany, CA); Li, Deyu (Albany, CA); Majumdar, Arun (Orinda, CA)

2010-01-10T23:59:59.000Z

386

Planar electrochemical device assembly  

DOE Patents [OSTI]

A pre-fabricated electrochemical device having a dense electrolyte disposed between an anode and a cathode preferably deposited as thin films is bonded to a porous electrically conductive support. A second porous electrically conductive support may be bonded to a counter electrode of the electrochemical device. Multiple electrochemical devices may be bonded in parallel to a single porous support, such as a perforated sheet to provide a planar array. Planar arrays may be arranged in a stacked interconnected array. A method of making a supported electrochemical device is disclosed wherein the method includes a step of bonding a pre-fabricated electrochemical device layer to an existing porous metal or porous metal alloy layer.

Jacobson; Craig P. (Lafayette, CA), Visco; Steven J. (Berkeley, CA), De Jonghe; Lutgard C. (Lafayette, CA)

2010-11-09T23:59:59.000Z

387

READING APR SELF-STUDY REPORTS  

E-Print Network [OSTI]

Library Space 36 Scholarly Communications Needs 39 Technologies and Computing 41 Access to Collections 43READING APR SELF-STUDY REPORTS NOTES FROM LIBRARY LIAISONS' COLLECTIVE REVIEW DRAFT 1 UC BERKELEY LIBRARY MARCH 2013 FOR INTERNAL UC BERKELEY LIBRARY USE AND DISCUSSION ONLY This report summarizes

California at Berkeley, University of

388

The readwrite Linked Data Web  

Science Journals Connector (OSTI)

...Discussion 1003 104 Discussion Meeting Issue Web science: a new frontier organized and edited...A. Hendler The read-write Linked Data Web Tim Berners-Lee 1 Kieron OHara 2 e-mail...Vassar Street, Cambridge, MA 02139, USA 2 Web and Internet Science, Electronics and Computer...

2013-01-01T23:59:59.000Z

389

POLICY NAME 1ST READING BY  

E-Print Network [OSTI]

POLICY NAME 1ST READING BY FACULTY SENATE APPROVED BY FACULTY SENATE POSTED FOR PUBLIC COMMENT APPROVED BY PRES or PROVOST ADOPTED FINAL POLICY DESTINATION Student Pregnancy Leave Pending Regents Professor (Version 1) 01/26/2011 04/27/2011 Regents Professor (Version 2) 04/12/2012 Revised Policy

Maxwell, Bruce D.

390

Effect of geotropism on instrument readings  

SciTech Connect (OSTI)

A review of gravity's effect on instrument readings, also referred to as geotropism. In this essay a review of meter movement construction and the effect are reviewed as it applies to portable radiation instruments. Reference to the three ANSI standards and their requirements are reviewed. An alternate approach to test for the effects is offered.

Rolph, James T.

2006-11-01T23:59:59.000Z

391

Weeks Lecture Topics Text Reading 1 Introduction  

E-Print Network [OSTI]

Weeks Lecture Topics Text Reading 1 Introduction Measurement and Units Ch 1, Sec 1-6 2 Motion-8 Common Exam 1 Ch. 1 - Ch.3 6 Energy -Work, Kinetic Energy, Work-Energy Theorem Ch. 6, Sec. 1, 3 7 Energy -Potential Energy, Mechanical Energy, Energy conservation, Power Ch. 6, Sec. 4-7, 9, 10 8 Momentum

392

WELCOME TO THE ELECTRONIC RESERVES COURSE READINGS  

E-Print Network [OSTI]

WELCOME TO THE ELECTRONIC RESERVES COURSE READINGS NOTE: THIS MATERIAL MAY BE PROTECTED Chernobyl are likely to have caused, world-wide, 430,000 fatal pre- mature cancers by the year 2000, roughly (Fry 1996). (A dose of radiation 5 E/dV, where E is the energy deposited, V is the volume of material

Shrader-Frechette, Kristin

393

AUDIO SYSTEM FOR TECHNICAL READINGS A Dissertation  

E-Print Network [OSTI]

AUDIO SYSTEM FOR TECHNICAL READINGS A Dissertation Presented to the Faculty of the Graduate School. V. Raman May 1994 #12; c fl T. V. Raman 1994 ALL RIGHTS RESERVED #12; AUDIO SYSTEM FOR TECHNICAL a computing system, A S T E R, that audio formats electronic documents to produce audio documents. A S T E R

Keinan, Alon

394

Unipolar arc simulation device  

SciTech Connect (OSTI)

We describe a simple laboratory device for establishing a vacuum arc plasma discharge that can serve to simulate a unipolar arc. The technique makes use of a triggered vacuum arc plasma gun to generate a plasma plume that in turn causes breakdown of a secondary discharge. The device is in fact a secondary vacuum arc discharge that is triggered by a primary vacuum arc discharge, with some of the features of the secondary plasma discharge having similarities with a unipolar arc configuration. Here we describe the experimental setup and outline how the device can be used for some areas of unipolar arc materials research. [copyright] [ital 1999 American Institute of Physics.

Wang, S.G.; Brown, I.G. (Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720 (United States))

1999-09-01T23:59:59.000Z

395

A survey of reading services provided to students with reading disabilities  

E-Print Network [OSTI]

................................................................... 70 12 Mode, Median and Interquartile (IQR) Values for Supplemental Instructional Reading Hours per Week for the Demographic Categories of District Size, Type, and Wealth ................. 71 13 Kruskal-Wallis Results for the Three Demographic... ................................................................... 70 12 Mode, Median and Interquartile (IQR) Values for Supplemental Instructional Reading Hours per Week for the Demographic Categories of District Size, Type, and Wealth ................. 71 13 Kruskal-Wallis Results for the Three Demographic...

Christen, Margaret Harding

2009-05-15T23:59:59.000Z

396

Wireless device monitoring systems and monitoring devices, and associated methods  

DOE Patents [OSTI]

Wireless device monitoring systems and monitoring devices include a communications module for receiving wireless communications of a wireless device. Processing circuitry is coupled with the communications module and configured to process the wireless communications to determine whether the wireless device is authorized or unauthorized to be present at the monitored area based on identification information of the wireless device. Methods of monitoring for the presence and identity of wireless devices are also provided.

McCown, Steven H; Derr, Kurt W; Rohde, Kenneth W

2014-05-27T23:59:59.000Z

397

Release of DRAFT RFP Headquarters Reading Room Instructions/Guidelines  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Release of DRAFT RFP Release of DRAFT RFP Headquarters Reading Room Instructions/Guidelines 1. Reading Room Points of Contact: 7/21 - 8/8, Mike Baehre, (202) 586-6575 8/9 - Close of Draft RFP, John Bernier, (202) 586-6416 Reading Room Availability: By Appointment - Reading Room will be available until DRAFT RFP Closes. Reading Room Hours: Morning, 9:00 a.m. - 11:30 a.m.; and Afternoon 1:00 p.m. - 3:30 p.m. Reading Room Will Accommodate: Up to 5-6 people 2. All personnel must: a. Sign-in b. Identify their Company or Firm they work for or are affiliated c. Indicate if they have a "Q" clearance 3. Personnel must stay in the Reading Room to view documents. The "A" corridor is inside a classified area and all visitors to the Reading Room must be escorted at all times.

398

Protocol, Required Reading - June 2012 | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Required Reading - June 2012 Required Reading - June 2012 Protocol, Required Reading - June 2012 June 2012 Protocol for Required Reading The purpose of this protocol is to establish the requirements and responsibilities for conducting and managing the Office of Safety and Emergency Management Evaluations (HS-45) required reading program. The required reading program provides a methodology to ensure that the HS-45 staff members are informed and up-to-date with Department of Energy (DOE), the Office of Health, Safety and Security (HSS), and office-specific requirements, processes, and guidance as well as to support continuous improvement. The required reading program will also be used to supplement staff training. This required reading program is based on DOE 0 422.1 Conduct of Operations Attachment 2, Appendix A and DOE-STD-1033-92 Guide to

399

?-RA: a parallel sparse index for genomic read alignment  

E-Print Network [OSTI]

Background Genomic read alignment involves mapping (exactly or approximately) short reads from a particular individual onto a pre-sequenced reference genome of the same species. Because all individuals of the same species ...

Kü lekci, M O?uzhan; Hon, Wing-Kai; Shah, Rahul; Vitter, Jeffrey Scott; Xu, Bojian

2011-07-27T23:59:59.000Z

400

Reading Abilities: Importance of Visual-Spatial Attention  

E-Print Network [OSTI]

Children with dyslexia may read poorly for several reasons. Recent research suggests that in addition to skills with language sounds, visual-spatial attention may be an important predictor of reading abilities.

Gabrieli, JohnD.E.

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Bring Your Own Device  

Broader source: Energy.gov [DOE]

Bring your own Device, or BYOD, has been a popular topic for some time now. While government organizations and private companies continue to struggle with how to enjoy the business and economic...

402

Ion Channels as Devices  

Science Journals Connector (OSTI)

Ion channels are proteins with a hole down ... biological function. Channels are devices in the engineering sense of the word and engineering analysis helps understand their function. In particular ... The curren...

Bob Eisenberg

2003-12-01T23:59:59.000Z

403

Multimaterial multifunctional fiber devices  

E-Print Network [OSTI]

Optical fibers and semiconductor devices differ significantly in their properties and their processing approaches. The latter require an assembly of metal, insulator and semiconductor materials into complex geometries with ...

Sorin, Fabien

2008-01-01T23:59:59.000Z

404

Reading, Ohio: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Reading, Ohio: Energy Resources Reading, Ohio: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 39.2236694°, -84.4421641° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.2236694,"lon":-84.4421641,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

405

A Simple Audio Conductivity Device  

Science Journals Connector (OSTI)

A Simple Audio Conductivity Device ... To solve these problems, the authors have built a simple audio conductivity device that is very sensitive to current flow. ...

Gregory Berenato; David F. Maynard

1997-04-01T23:59:59.000Z

406

Literaturlenz: Reading with Authors from Germany, Switzerland, and Austria Reading with Larissa Boehning, Monica Cantieni, and Linda Stift  

E-Print Network [OSTI]

Literaturlenz: Reading with Authors from Germany, Switzerland, and Austria Reading with Larissa.m. Each year Literaturlenz brings authors from Germany, Switzerland, and Austria to the UW Campus. Each Boehning from Germany, Monica Cantieni from Switzerland, and Linda Stift of Austria. The readings

Sheridan, Jennifer

407

Temperature dependence of thermal conductivity of AlxGa1-xN thin films measured by the differential 3 technique  

E-Print Network [OSTI]

Device Processing Lab EE 137 Intro to Semiconductor Optoelectronic Devices EE 160 Fiber Optic Control EE 137 Intro to Semiconductor Optoelectronic Devices EE 143 Multimedia Technologies

408

Electrical apparatus lockout device  

SciTech Connect (OSTI)

A simple lockout device for electrical equipment equipped with recessed power blades is described. The device comprises a face-plate (12) having a threaded member (14) attached thereto and apertures suitable for accommodating the power blades of a piece of electrical equipment, an elastomeric nose (16) abutting the face-plate having a hole for passage of the threaded member therethrough and power blade apertures in registration with those of the face-plate, a block (20) having a recess (34) in its forward face for receiving at least a portion of the hose, a hole therein for receiving the threaded member and an integral extension (26) extending from its rear face. A thumb screw (22) suitable for turning with the hands and having internal threads suitable for engaging the threaded member attached to the face-plate is inserted into a passage in the integral extension to engage the threaded member in such a fashion that when the device is inserted over the recessed power blades of a piece of electrical equipment and the thumb screw (22) tightened, the elastomeric nose (16) is compressed between the face-plate (12) and the block (20) forcing it to expand laterally thereby securing the device in the recess and precluding the accidental or intentional energization of the piece of equipment by attachment of a power cord to the recessed power blades. Means are provided in the interval extension and the thumb screw for the attachment of a locking device (46) which will satisfy OSHA standards.

Gonzales, R.

1999-10-12T23:59:59.000Z

409

Electrical apparatus lockout device  

DOE Patents [OSTI]

A simple lockout device for electrical equipment equipped with recessed power blades is described. The device comprises a face-plate (12) having a threaded member (14) attached thereto and apertures suitable for accommodating the power blades of a piece of electrical equipment, an elastomeric nose (16) abutting the face-plate having a hole for passage of the threaded member therethrough and power blade apertures in registration with those of the face-plate, a block (20) having a recess (34) in its forward face for receiving at least a portion of the hose, a hole therein for receiving the threaded member and an integral extension (26) extending from its rear face. A thumb screw (22) suitable for turning with the hands and having internal threads suitable for engaging the threaded member attached to the face-plate is inserted into a passage in the integral extension to engage the threaded member in such a fashion that when the device is inserted over the recessed power blades of a piece of electrical equipment and the thumb screw (22) tightened, the elastomeric nose (16) is compressed between the face-plate (12) and the block (20) forcing it to expand laterally thereby securing the device in the recess and precluding the accidental or intentional energization of the piece of equipment by attachment of a power cord to the recessed power blades. Means are provided in the interval extension and the thumb screw for the attachment of a locking device (46) which will satisfy OSHA standards.

Gonzales, Rick (Chesapeake, VA)

1999-01-01T23:59:59.000Z

410

Highly entangled photons from hybrid piezoelectric-semiconductor quantum dot devices  

E-Print Network [OSTI]

Entanglement resources are key ingredients of future quantum technologies. If they could be efficiently integrated into a semiconductor platform a new generation of devices could be envisioned, whose quantum-mechanical functionalities are controlled via the mature semiconductor technology. Epitaxial quantum dots (QDs) embedded in diodes would embody such ideal quantum devices, but QD structural asymmetries lower dramatically the degree of entanglement of the sources and hamper severely their real exploitation in the foreseen applications. In this work, we overcome this hurdle using strain-tunable optoelectronic devices, where any QD can be tuned for the emission of highly polarization-entangled photons. The electrically-controlled sources violate Bell inequalities without the need of spectral or temporal filtering and they feature the highest degree of entanglement ever reported for QDs, with concurrence as high as 0.75(2). These quantum-devices are at present the most promising candidates for the direct implementation of QD-based entanglement-resources in quantum information science and technology.

Rinaldo Trotta; Johannes S. Wildmann; Eugenio Zallo; Oliver G. Schmidt; Armando Rastelli

2014-03-02T23:59:59.000Z

411

How to Read Your Electric Meter | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

How to Read Your Electric Meter How to Read Your Electric Meter How to Read Your Electric Meter July 2, 2012 - 8:21pm Addthis The difference between one month's reading and the next is the amount of energy units that have been used for that billing period. | Photo courtesy of Warren Gretz, NREL. The difference between one month's reading and the next is the amount of energy units that have been used for that billing period. | Photo courtesy of Warren Gretz, NREL. What are the key facts? The basic unit of measure of electric power is the Watt, and one thousand Watts are called a kilowatt. Your electric utility bills you by the kilowatt-hour -- the number of kilowatts you use per hour. When reading an electric meter, read and write down the numbers as shown on the dials from right to left.

412

Fragment capture device  

DOE Patents [OSTI]

A fragment capture device for use in explosive containment. The device comprises an assembly of at least two rows of bars positioned to eliminate line-of-sight trajectories between the generation point of fragments and a surrounding containment vessel or asset. The device comprises an array of at least two rows of bars, wherein each row is staggered with respect to the adjacent row, and wherein a lateral dimension of each bar and a relative position of each bar in combination provides blockage of a straight-line passage of a solid fragment through the adjacent rows of bars, wherein a generation point of the solid fragment is located within a cavity at least partially enclosed by the array of bars.

Payne, Lloyd R. (Los Lunas, NM); Cole, David L. (Albuquerque, NM)

2010-03-30T23:59:59.000Z

413

Biochip scanner device  

DOE Patents [OSTI]

A biochip scanner device used to detect and acquire fluorescence signal data from biological microchips or biochips and method of use are provided. The biochip scanner device includes a laser for emitting a laser beam. A modulator, such as an optical chopper modulates the laser beam. A scanning head receives the modulated laser beam and a scanning mechanics coupled to the scanning head moves the scanning head relative to the biochip. An optical fiber delivers the modulated laser beam to the scanning head. The scanning head collects the fluorescence light from the biochip, launches it into the same optical fiber, which delivers the fluorescence into a photodetector, such as a photodiode. The biochip scanner device is used in a row scanning method to scan selected rows of the biochip with the laser beam size matching the size of the immobilization site.

Perov, Alexander (Troitsk, RU); Belgovskiy, Alexander I. (Mayfield Heights, OH); Mirzabekov, Andrei D. (Darien, IL)

2001-01-01T23:59:59.000Z

414

Electrochromic optical switching device  

DOE Patents [OSTI]

An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source. 3 figs.

Lampert, C.M.; Visco, S.J.

1992-08-25T23:59:59.000Z

415

Electrochromic optical switching device  

DOE Patents [OSTI]

An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source.

Lampert, Carl M. (El Sobrante, CA); Visco, Steven J. (Berkeley, CA)

1992-01-01T23:59:59.000Z

416

Ion manipulation device  

DOE Patents [OSTI]

An ion manipulation method and device is disclosed. The device includes a pair of substantially parallel surfaces. An array of inner electrodes is contained within, and extends substantially along the length of, each parallel surface. The device includes a first outer array of electrodes and a second outer array of electrodes. Each outer array of electrodes is positioned on either side of the inner electrodes, and is contained within and extends substantially along the length of each parallel surface. A DC voltage is applied to the first and second outer array of electrodes. A RF voltage, with a superimposed electric field, is applied to the inner electrodes by applying the DC voltages to each electrode. Ions either move between the parallel surfaces within an ion confinement area or along paths in the direction of the electric field, or can be trapped in the ion confinement area.

Anderson, Gordon A; Smith, Richard D; Ibrahim, Yehia M; Baker, Erin M

2014-09-16T23:59:59.000Z

417

Nonaqueous Electrical Storage Device  

DOE Patents [OSTI]

An electrochemical capacitor is disclosed that features two, separated, high surface area carbon cloth electrodes sandwiched between two current collectors fabricated of a conductive polymer having a flow temperature greater than 130.degree. C., the perimeter of the electrochemical capacitor being sealed with a high temperature gasket to form a single cell device. The gasket material is a thermoplastic stable at temperatures greater than 100.degree. C., preferably a polyester or a polyurethane, and having a reflow temperature above 130.degree. C. but below the softening temperature of the current collector material. The capacitor packaging has good mechanical integrity over a wide temperature range, contributes little to the device equivalent series resistance (ESR), and is stable at high potentials. In addition, the packaging is designed to be easily manufacturable by assembly line methods. The individual cells can be stacked in parallel or series configuration to reach the desired device voltage and capacitance.

McEwen, Alan B. (Melrose, MA); Evans, David A. (Seekonk, MA); Blakley, Thomas J. (Woburn, MA); Goldman, Jay L. (Mansfield, MA)

1999-10-26T23:59:59.000Z

418

Precision alignment device  

DOE Patents [OSTI]

Apparatus for providing automatic alignment of beam devices having an associated structure for directing, collimating, focusing, reflecting, or otherwise modifying the main beam. A reference laser is attached to the structure enclosing the main beam producing apparatus and produces a reference beam substantially parallel to the main beam. Detector modules containing optical switching devices and optical detectors are positioned in the path of the reference beam and are effective to produce an electrical output indicative of the alignment of the main beam. This electrical output drives servomotor operated adjustment screws to adjust the position of elements of the structure associated with the main beam to maintain alignment of the main beam. 5 figs.

Jones, N.E.

1988-03-10T23:59:59.000Z

419

Phononic crystal devices  

DOE Patents [OSTI]

Phononic crystals that have the ability to modify and control the thermal black body phonon distribution and the phonon component of heat transport in a solid. In particular, the thermal conductivity and heat capacity can be modified by altering the phonon density of states in a phononic crystal. The present invention is directed to phononic crystal devices and materials such as radio frequency (RF) tags powered from ambient heat, dielectrics with extremely low thermal conductivity, thermoelectric materials with a higher ratio of electrical-to-thermal conductivity, materials with phononically engineered heat capacity, phononic crystal waveguides that enable accelerated cooling, and a variety of low temperature application devices.

El-Kady, Ihab F. (Albuquerque, NM); Olsson, Roy H. (Albuquerque, NM)

2012-01-10T23:59:59.000Z

420

Students' Perceived and Actual Use of Strategies for Reading and Writing  

E-Print Network [OSTI]

for the two interrelated processes: reading and writingfor the two interrelated processes: reading and writinginterrelated studies, examined university students' processes

Yoo, Monica

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Nanomaterials for LightManagement in Electro-Optical Devices  

SciTech Connect (OSTI)

In the past decade, nanostructured materials and nanoparticles have emerged as the necessary ingredients for electrooptical applications and enhancement of device performance, in particular by making use of the light management aspects of the nanomaterials. The application areas that are being transformed profoundly include smart coating devices (e.g., electrochromic, photochromic, and thermochromic devices), solar energy, and sensing. Despite the large volume of work in the past on smart coating devices, and in particular on electrochromic devices and thermochromic fenestrations, for optical transmission or reflection control, applications remain limited because of slow response time and nonuniformity in the case of large surfaces. Recent works in the field indicate that nanostructured electrochromic coatings would be an integral part of the solution to the above problem. One aspect that can thus be focused on would be the fabrication and characterization of the nanostructured smart coating materials and their compatibility with other layers in the overall smart coating device. In the area of solar photovoltaics, nanomaterials have been used in designing light-trapping schemes for inorganic as well as organic solar cells. One particular category of solar cells that has attracted much interest is the plasmonic solar cells in which metallic nanoparticles are incorporated, helping in enhancing their energy conversion efficiency. Nanostructured solar cells would eventually develop into a 'game changing' technology for making solar cells that are affordable and highly efficient, providing a sizeable alternative energy source for our ever-increasing energy needs. Sensors based on the optical properties of constituting nanostructures and nanoparticles also form a most interesting class of bio- and electrochemical sensing devices. The possibility of synthetizing nanoparticles and structures of specifically desired sizes and shapes has indeed opened a whole new range of sensing applications. In parallel to the experimental development of nanomaterials for light management in devices, theoretical modeling and analysis have also accomplished much progress, and different methods for simulating the optical properties of nanoparticles and structures have been proposed. This special issue of the Journal of Nanomaterials is thus dedicated to articles dealing with nanostructured materials that can be used for light management purpose in different applications. Silicon-rich oxide (SRO) is a dielectric material that contains Si nanoparticles and exhibits interesting physical characteristics for applications in optoelectronic devices. The work by Aceves-Mijares et al. examine, in detail the electro-, cathode- and photoluminescence properties of SRO and discuss the origin of light emission in this type of materials. SRO films, of high and medium silicon excess density, obtained by low-pressure chemical vapor deposition and annealed at 1,100 C have been studied. Results obtained by the authors have led to conclude that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals, and the emission mechanism is similar to that in the donor-acceptor decay in semiconductors with a specific wide emission spectrum. Two papers are devoted to nanostructured electrochromic thin films, a category of materials most suitable for controlling light transmission or absorption in electrooptical devices, including smart window coatings. Dinh et al. have shown that by mixing nanostructured Ti and W oxides films, one can obtain devices with considerable enhancement of electrochromic efficiency and electrochemical stability as compared to the conventional nonnanostructured films. As large-area mixed Ti and W oxides can be prepared by the simple doctor blade technique followed by an electrochemical process, this type of nanostructured electrochromic films can be considered a good candidate for smart window applications. Djaoued et al. have presented their studies on the synthesis, characterization, and electrochromic applicatio

Truong, Vo-Van [Concordia University, Montral, Qubec, H4B 1R6, Canada; Singh, Jai [Charles Darwin University, Darwin, Australia; Tanemura, Sakae [Japan Fine Ceramics Center, Nagoya, Japan; Hu, Michael Z. [ORNL

2012-01-01T23:59:59.000Z

422

Young and Older Adults Reading of Distracters  

E-Print Network [OSTI]

. Psychology and Aging, 21, 448-465. Shipley, W. C. (1940). A self-administered scale for measuring intellectual impairment and deterioration. Journal of Psychology, 9, 371-377. Kemper, S., McDowd, J., Metcalf, K., & Liu, C.-J. (2008). Young and older...Kemper, S., McDowd, J., Metcalf, K., & Liu, C.-J. (2008). Young and older adults reading of distracters. Educational Gerontology, 34, 489-502. PM#2396579. Publishers official version: http://dx.doi.org/10.1080/03601270701835858. Open Access...

Kemper, Susan; McDowd, Joan; Metcalf, Kim; Liu, Chiung-Ju

2008-05-01T23:59:59.000Z

423

Dickensian Melodrama: a Reading of the Novels  

E-Print Network [OSTI]

fuzzier than that: in reading Victorian critics of Dickens like George Eliot, James Fitzjames Stephen, R. H. Hutton, Anthony Trollope, and George Gissing, one often finds it difficult to tell precisely what they had in mind in accusing Dickens of being..., the thought of that you propose, should have brought the blushes to your face, and made you dumb with shame;but now, with want at our heartha husband mad with sorrowchildren unprotectednow to offer!oh! you have a heart of stone, or you could ne'er...

Worth, George J.

1978-01-01T23:59:59.000Z

424

Device Oriented Project Controller  

SciTech Connect (OSTI)

This proposal is directed at the issue of developing control systems for very large HEP projects. A de-facto standard in accelerator control is the Experimental Physics and Industrial Control System (EPICS), which has been applied successfully to many physics projects. EPICS is a channel based system that requires that each channel of each device be configured and controlled. In Phase I, the feasibility of a device oriented extension to the distributed channel database was demonstrated by prototyping a device aware version of an EPICS I/O controller that functions with the current version of the channel access communication protocol. Extensions have been made to the grammar to define the database. Only a multi-stage position controller with limit switches was developed in the demonstration, but the grammar should support a full range of functional record types. In phase II, a full set of record types will be developed to support all existing record types, a set of process control functions for closed loop control, and support for experimental beam line control. A tool to configure these records will be developed. A communication protocol will be developed or extensions will be made to Channel Access to support introspection of components of a device. Performance bench marks will be made on both communication protocol and the database. After these records and performance tests are under way, a second of the grammar will be undertaken.

Dalesio, Leo; Kraimer, Martin

2013-11-20T23:59:59.000Z

425

Condensate removal device  

DOE Patents [OSTI]

A condensate removal device is disclosed which incorporates a strainer in unit with an orifice. The strainer is cylindrical with its longitudinal axis transverse to that of the vapor conduit in which it is mounted. The orifice is positioned inside the strainer proximate the end which is remoter from the vapor conduit.

Maddox, James W. (Newport News, VA); Berger, David D. (Alexandria, VA)

1984-01-01T23:59:59.000Z

426

Solar Innovator | Alta Devices  

SciTech Connect (OSTI)

Selected to participate in the Energy Department's SunShot Initiative, Alta Devices produces solar cells that convert sunlight into electricity at world record-breaking levels of efficiency. Through its innovative solar technology Alta is helping bring down the cost of solar. Learn more about the Energy Department's efforts to advance solar technology at energy.gov/solar .

Mattos, Laila; Le, Minh

2012-01-01T23:59:59.000Z

427

Multiple gap photovoltaic device  

DOE Patents [OSTI]

A multiple gap photovoltaic device having a transparent electrical contact adjacent a first cell which in turn is adjacent a second cell on an opaque electrical contact, includes utilizing an amorphous semiconductor as the first cell and a crystalline semiconductor as the second cell.

Dalal, Vikram L. (Newark, DE)

1981-01-01T23:59:59.000Z

428

Topic 2: Backtracking andTopic 2: Backtracking and Recommended ReadingsRecommended Readings  

E-Print Network [OSTI]

Recommended Readings ·· Chapter 3 from Programming in PrologChapter 3 from Programming in Prolog 2 Searching for the AnswerSearching for the Answer ·· Two notions of correctnessTwo notions of correctness ­­ Logical conjunction shouldn't matter ·· In practice, Prolog searches for an answerIn practice, Prolog searches

Stephenson, Ben

429

Effect of an Electric Field on the Growth and Optoelectronic Properties of Quasi-One-Dimensional Organic Single Crystals of 1-(Phenylazo)-2-naphthol  

Science Journals Connector (OSTI)

Effect of an Electric Field on the Growth and Optoelectronic Properties of Quasi-One-Dimensional Organic Single Crystals of 1-(Phenylazo)-2-naphthol ... The elementary component of the crystal needle is believed to be the individual molecular column as indicted by the X-ray diffraction results. ... Because ?? was measured between two Pt electrodes and ?? between two ITO electrodes, the contact resistance may play a role. ...

Chong-yang Liu; Vincent Lynch; Allen J. Bard

1997-04-16T23:59:59.000Z

430

Surveillance Guide - OPS 9.14 Required Reading  

Broader source: Energy.gov (indexed) [DOE]

REQUIRED READING REQUIRED READING 1.0 Objective The objective of this surveillance is to evaluate the facility required reading program and current status of required reading. This surveillance provides a basis for evaluating the effectiveness of the contractor's program for required reading and for establishing compliance with DOE requirements. 2.0 References 2.1 DOE 5480.19, Conduct of Operations Requirements for DOE Facilities 2.2 DOE-STD-1033-92, Guide to Good Practices for Operations and Administration Updates Through Required Reading 3.0 Requirements Implemented This surveillance is conducted to implement requirements of the Functions, Responsibilities, and Authorities Manual, Section 20, Operations, FRAM 4253, 4258, and 4261. These requirements are drawn

431

Policy Implications: Replacing the Reading TAKS Cut Scores with the Common Core Curriculum Reading Cut Scores on Three Middle School Campuses  

E-Print Network [OSTI]

reading rigor to ensure academic success is key for educators. Although Texas opted not to adopt the Common Core Curriculum Standards and the accompanying Stretch Lexile measures for reading that require higher reading levels at each grade, Texas educators...

Thaemlitz, Kristi

2013-07-30T23:59:59.000Z

432

Gunshot triangulation device testing  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Gunshot triangulation device testing Gunshot triangulation device testing Report to the Fermilab Community Advisory Board, Oct. 28, 2010 The Fermilab security director outlined for the board last month a recurring problem of people shooting guns near the edges of the laboratory and bullets coming onto the site. Fermilab is installing a system to triangulate the gunshots to improve police response time. This will require a set-up calibration of two dozen gunshots during a total of 6 minutes at the laboratory site. The board was asked for recommendations about how and whom to inform of the test firing. In response to the board discussion, Fermilab plans to take the following actions:  The test firing will occur during the mid-day of a week day to minimize the number of residents

433

Dielectrokinetic chromatography devices  

DOE Patents [OSTI]

Disclosed herein are methods and devices for dielectrokinetic chromatography. As disclosed, the devices comprise microchannels having at least one perturber which produces a non-uniformity in a field spanning the width of the microchannel. The interaction of the field non-uniformity with a perturber produces a secondary flow which competes with a primary flow. By decreasing the size of the perturber the secondary flow becomes significant for particles/analytes in the nanometer-size range. Depending on the nature of a particle/analyte present in the fluid and its interaction with the primary flow and the secondary flow, the analyte may be retained or redirected. The composition of the primary flow can be varied to affect the magnitude of primary and/or secondary flows on the particles/analytes and thereby separate and concentrate it from other particles/analytes.

Chirica, Gabriela S; Fiechtner, Gregory J; Singh, Anup K

2014-12-16T23:59:59.000Z

434

Light modulating device  

DOE Patents [OSTI]

In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity.

Rauh, R. David (Newton, MA); Goldner, Ronald B. (Lexington, MA)

1989-01-01T23:59:59.000Z

435

Light modulating device  

DOE Patents [OSTI]

In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity are disclosed. 1 fig.

Rauh, R.D.; Goldner, R.B.

1989-12-26T23:59:59.000Z

436

Support and maneuvering device  

DOE Patents [OSTI]

A support and maneuvering device includes an elongated flexible inflatable enclosure having a fixed end and a movable end. The movable end is collapsible toward the fixed end to a contracted position when the enclosure is in a noninflated condition. Upon inflation, the movable end is movable away from the fixed end to an extended position. The movable end includes means for mounting an article such as a solar reflector thereon. The device also includes a plurality of position controlling means disposed about the movable end to effect adjusting movement of portions thereof by predetermined amounts and for controlling an angle at which the article disposed at the movable end is oriented. The plurality of position controlling means limits a suitable number degrees of freedom of the movable end for transmitting a steering motion thereto and for controlling the position thereof. 9 figs.

Wood, R.L.

1987-03-23T23:59:59.000Z

437

Wire brush fastening device  

DOE Patents [OSTI]

A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus. 13 figs.

Meigs, R.A.

1995-09-19T23:59:59.000Z

438

Support and maneuvering device  

DOE Patents [OSTI]

A support and maneuvering device includes an elongated flexible inflatable enclosure having a fixed end and a movable end. The movable end is collapsible toward the fixed end to a contracted position when the enclosure is in a noninflated condition. Upon inflation, the movable end is movable away from the fixed end to an extended position. The movable end includes means for mounting an article such as a solar reflector thereon. The device also includes a plurality of position controlling means disposed about the movable end to effect adjusting movement of portions thereof by predetermined amounts and for controlling an angle at which the article disposed at the movable end is oriented. The plurality of position controlling means limits a suitable number degrees of freedom of the movable end for transmitting a steering motion thereto and for controlling the position thereof.

Wood, Richard L. (Arvada, CO)

1988-01-01T23:59:59.000Z

439

Residual gas analysis device  

DOE Patents [OSTI]

A system is provided for testing the hermeticity of a package, such as a microelectromechanical systems package containing a sealed gas volume, with a sampling device that has the capability to isolate the package and breach the gas seal connected to a pulse valve that can controllably transmit small volumes down to 2 nanoliters to a gas chamber for analysis using gas chromatography/mass spectroscopy diagnostics.

Thornberg, Steven M. (Peralta, NM)

2012-07-31T23:59:59.000Z

440

Golden Reading Room: FOIA Requester Service Centers and Public...  

Office of Environmental Management (EM)

FOIA Requester Service Centers and Public Liaisons Golden Reading Room: FOIA Requester Service Centers and Public Liaisons U.S. Department of Energy http:energy.govmanagement...

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Reading Merleau-Ponty: Cognitive science, pathology and transcendental phenomenology.  

E-Print Network [OSTI]

??Master of Philosophy (Dept. of Philosophy)%%%This thesis explores the evolution of the way the Phenomenology of Perception is read for the purpose of determining its (more)

Tauber, Justin

2007-01-01T23:59:59.000Z

442

Reading Municipal Light Department - Business Energy Efficiency Rebate  

Broader source: Energy.gov (indexed) [DOE]

Reading Municipal Light Department - Business Energy Efficiency Reading Municipal Light Department - Business Energy Efficiency Rebate Program Reading Municipal Light Department - Business Energy Efficiency Rebate Program < Back Eligibility Commercial Industrial Savings Category Heating & Cooling Commercial Heating & Cooling Heating Cooling Heat Pumps Manufacturing Appliances & Electronics Buying & Making Electricity Energy Sources Solar Wind Maximum Rebate $50,000 Program Info Expiration Date 04/30/2013 State Massachusetts Program Type Utility Rebate Program Rebate Amount Up to $50,000 Provider Incentive Programs Reading Municipal Light Department (RMLD) offers energy efficiency incentives to eligible commercial and industrial customers. Rebates of up to $50,000 are available to customers who wish to reduce energy consumption

443

Taming hot CF3 radicals: incrementally tuned families of polyarene acceptors for air-stable molecular optoelectronics  

SciTech Connect (OSTI)

Breakthroughs in molecular optoelectronics await the availability of new families of air-stable polyaromatic hydrocarbon (PAH) acceptors with incrementally- and predictably-tunable electron affinities and structures capable of inducing desirable solid-state morphologies in hybrid materials. Although the addition of electron withdrawing groups to PAHs has been studied for decades, producing new compounds from time to time, a generic one-step synthetic methodology applicable to potentially all PAH substrates has been, until now, an impossible dream. We herein report that at least seventeen common PAHs and polyheterocyclics can be trifluoromethylated by a new procedure to yield families of PAH(CF3)n acceptors with (i) n = 4-8, (ii) multiple isomers for particular n values, (iii) gas-phase experimental electron affinities as high as 3.32 eV and shifted from the respective PAH precursor as a linear function of n, and (iv) various solid-state morphologies, including the ability to form alternating ? stacked hybrid crystals with aromatic donors.

Kuvychko, Igor V.; Castro, Karlee P.; Deng, Shihu; Wang, Xue B.; Strauss, Steven H.; Boltalina, Olga V.

2013-04-26T23:59:59.000Z

444

658 IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, VOL. 28, NO. 4, DECEMBER 2005 Superlattice Microrefrigerators Fusion Bonded  

E-Print Network [OSTI]

Superlattice Microrefrigerators Fusion Bonded With Optoelectronic Devices Yan Zhang, Gehong Zeng, Joachim CURRENT research trends in optoelectronic devices are moving toward increased speed, wavelength capacity, and level of integration. Lasers and optoelectronic devices are very sensitive to temperature. Heat flux

Bowers, John

445

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 11, NO. 6, NOVEMBER/DECEMBER 2005 1255 Intimate Monolithic Integration of Chip-Scale  

E-Print Network [OSTI]

circuits comprising optoelectronic devices (e.g., surface-illuminated pho- todetectors, waveguide quantum, and self-planarization and passi- vation steps to compactly integrate optoelectronic devices- cation wavelength band. Index Terms--Integrated optoelectronic devices, monolithic in- tegration

Demir, Hilmi Volkan

446

Energy Management on Handheld Devices  

Science Journals Connector (OSTI)

Handheld devices are becoming ubiquitous and as their capabilities increase, they are starting to displace laptop computers - much as laptop computers have displaced desktop computers in many roles. Handheld devices are evolving from today's PDAs, organizers, ...

Marc A Viredaz; Lawrence S Brakmo; William R Hamburgen

2003-10-01T23:59:59.000Z

447

2011 NERSC User Survey (Read Only)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Results » Survey Text Results » Survey Text 2011 NERSC User Survey (Read Only) The survey is closed. Section 1: Overall Satisfaction with NERSC When you are finished with this page click "Save & Go to Next Section" or your responses will be lost. Please do not answer a specific question or rate a specific item if you have no opinion on it. For each item you use, please indicate both your satisfaction and its importance to you. Please rate: How satisfied are you? How important is this to you? Overall satisfaction with NERSC Not Answered Very Satisfied Mostly Satisfied Somewhat Sat. Neutral Somewhat Dissat. Mostly Dissat. Very Dissatisfied I Do Not Use This Not Answered Very Important Somewhat Important Not Important NERSC services Not Answered Very Satisfied Mostly Satisfied Somewhat Sat. Neutral Somewhat Dissat. Mostly Dissat. Very Dissatisfied I Do Not Use This Not Answered Very Important Somewhat Important Not Important

448

Nanotube resonator devices  

DOE Patents [OSTI]

A fully-functional radio receiver fabricated from a single nanotube is being disclosed. Simultaneously, a single nanotube can perform the functions of all major components of a radio: antenna, tunable band-pass filter, amplifier, and demodulator. A DC voltage source, as supplied by a battery, can power the radio. Using carrier waves in the commercially relevant 40-400 MHz range and both frequency and amplitude modulation techniques, successful music and voice reception has been demonstrated. Also disclosed are a radio transmitter and a mass sensor using a nanotube resonator device.

Jensen, Kenneth J; Zettl, Alexander K; Weldon, Jeffrey A

2014-05-06T23:59:59.000Z

449

The University of Reading Helen Dacre Evaluating pollution transport in  

E-Print Network [OSTI]

The University of Reading Helen Dacre Evaluating pollution transport in weather prediction models Outline Air pollution forecasting Offline forecasting Online forecasting Aim Overview of ETEX 2 case Conclusions and future work #12;The University of Reading Helen Dacre Offline Air Pollution Forecasting

Dacre, Helen

450

Radiography Device | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Radiography Device Radiography Device Radiography Device This scenario provides the planning instructions, guidance, and evaluation forms necessary to conduct an exercise involving a highway shipment of a radiography device (Class 7 - Radioactive). This exercise manual is one in a series of five scenarios developed by the Department of Energy Transportation Emergency Preparedness Program. Responding agencies may include several or more of the following: local municipal and county fire, police, sheriff, and Emergency Medical Services (EMS) personnel; state, local, and federal emergency response teams; emergency response contractors; and other emergency response resources that could potentially be provided by the carrier and the originating facility (shipper). Radiography Device.docx

451

Stretchable and foldable electronic devices  

DOE Patents [OSTI]

Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

2014-12-09T23:59:59.000Z

452

Stretchable and foldable electronic devices  

DOE Patents [OSTI]

Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

2013-10-08T23:59:59.000Z

453

Crystalline Nanoporous Frameworks: a Nanolaboratory for Probing Excitonic Device Concepts.  

SciTech Connect (OSTI)

Electro-optical organic materials hold great promise for the development of high-efficiency devices based on exciton formation and dissociation, such as organic photovoltaics (OPV) and organic light-emitting devices (OLEDs). However, the external quantum efficiency (EQE) of both OPV and OLEDs must be improved to make these technologies economical. Efficiency rolloff in OLEDs and inability to control morphology at key OPV interfaces both reduce EQE. Only by creating materials that allow manipulation and control of the intimate assembly and communication between various nanoscale excitonic components can we hope to first understand and then engineer the system to allow these materials to reach their potential. The aims of this proposal are to: 1) develop a paradigm-changing platform for probing excitonic processes composed of Crystalline Nanoporous Frameworks (CNFs) infiltrated with secondary materials (such as a complimentary semiconductor); 2) use them to probe fundamental aspects of excitonic processes; and 3) create prototype OPVs and OLEDs using infiltrated CNF as active device components. These functional platforms will allow detailed control of key interactions at the nanoscale, overcoming the disorder and limited synthetic control inherent in conventional organic materials. CNFs are revolutionary inorganic-organic hybrid materials boasting unmatched synthetic flexibility that allow tuning of chemical, geometric, electrical, and light absorption/generation properties. For example, bandgap engineering is feasible and polyaromatic linkers provide tunable photon antennae; rigid 1-5 nm pores provide an oriented, intimate host for triplet emitters (to improve light emission in OLEDs) or secondary semiconducting polymers (creating a charge-separation interface in OPV). These atomically engineered, ordered structures will enable critical fundamental questions to be answered concerning charge transport, nanoscale interfaces, and exciton behavior that are inaccessible in disordered systems. Implementing this concept also creates entirely new dimensions for device fabrication that could both improve performance, increase durability, and reduce costs with unprecedented control of over properties. This report summarizes the key results of this project and is divided into sections based on publications that resulted from the work. We begin in Section 2 with an investigation of light harvesting and energy transfer in a MOF infiltrated with donor and acceptor molecules of the type typically used in OPV devices (thiophenes and fullerenes, respectively). The results show that MOFs can provide multiple functions: as a light harvester, as a stabilizer and organizer or the infiltrated molecules, and as a facilitator of energy transfer. Section 3 describes computational design of MOF linker groups to accomplish light harvesting in the visible and facilitate charge separation and transport. The predictions were validated by UV-visible absorption spectroscopy, demonstrating that rational design of MOFs for light-harvesting purposes is feasible. Section 4 extends the infiltration concept discussed in Section to, which we now designate as %22Molecule%40MOF%22 to create an electrically conducting framework. The tailorability and high conductivity of this material are unprecedented, meriting publication in the journal Science and spawning several Technical Advances. Section 5 discusses processes we developed for depositing MOFs as thin films on substrates, a critical enabling technology for fabricating MOF-based electronic devices. Finally, in Section 6 we summarize results showing that a MOF thin film can be used as a sensitizer in a DSSC, demonstrating that MOFs can serve as active layers in excitonic devices. Overall, this project provides several crucial proofs-of- concept that the potential of MOFs for use in optoelectronic devices that we predicted several years ago [ 3 ] can be realized in practice.

Allendorf, Mark D.; Azoulay, Jason; Ford, Alexandra Caroline [Sandia National Laboratories, Albuquerque, NM; Foster, Michael E.; El Gabaly Marquez, Farid; Leonard, Francois Leonard; Leong-Hau, Kirsty; Stavila, Vitalie; Talin, Albert Alec; Wong, Brian M.; Brumbach, Michael T. [Sandia National Laboratories, Albuquerque, NM; Van Gough, D.; Lambert, Timothy N. [Sandia National Laboratories, Albuquerque, NM; Rodriguez, Mark A. [Sandia National Laboratories, Albuquerque, NM; Spoerke, Erik David [Sandia National Laboratories, Albuquerque, NM; Wheeler, David R. [Sandia National Laboratories, Albuquerque, NM; Deaton, Joseph C.; Centrone, Andrea; Haney, Paul; Kinney, R.; Szalai, Veronika; Yoon, Heayoung P.

2014-09-01T23:59:59.000Z

454

How to Read Your Electric Meter | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Your Electric Meter Your Electric Meter How to Read Your Electric Meter July 2, 2012 - 8:21pm Addthis The difference between one month's reading and the next is the amount of energy units that have been used for that billing period. | Photo courtesy of Warren Gretz, NREL. The difference between one month's reading and the next is the amount of energy units that have been used for that billing period. | Photo courtesy of Warren Gretz, NREL. What are the key facts? The basic unit of measure of electric power is the Watt, and one thousand Watts are called a kilowatt. Your electric utility bills you by the kilowatt-hour -- the number of kilowatts you use per hour. When reading an electric meter, read and write down the numbers as shown on the dials from right to left. You may also wish to contact your local utility company for more

455

Fluid flow monitoring device  

DOE Patents [OSTI]

A flow meter and temperature measuring device are described comprising a tube with a body centered therein for restricting flow and a sleeve at the upper end of the tube to carry several channels formed longitudinally in the sleeve to the appropriate axial location where they penetrate the tube to allow pressure measurements and temperature measurements with thermocouples. The high pressure measurement is made using a channel penetrating the tube away from the body and the low pressure measurement is made at a location at the widest part of the body. An end plug seals the end of the device and holes at its upper end allow fluid to pass from the interior of the tube into a plenum. The channels are made by cutting grooves in the sleeve, the grooves widened at the surface of the sleeve and then a strip of sleeve material is welded to the grooves closing the channels. Preferably the sleeve is packed with powdered graphite before cutting the grooves and welding the strips. 7 figures.

McKay, M.D.; Sweeney, C.E.; Spangler, B.S. Jr.

1993-11-30T23:59:59.000Z

456

Fluid flow monitoring device  

DOE Patents [OSTI]

A flow meter and temperature measuring device comprising a tube with a body centered therein for restricting flow and a sleeve at the upper end of the tube to carry several channels formed longitudinally in the sleeve to the appropriate axial location where they penetrate the tube to allow pressure measurements and temperature measurements with thermocouples. The high pressure measurement is made using a channel penetrating the tube away from the body and the low pressure measurement is made at a location at the widest part of the body. An end plug seals the end of the device and holes at its upper end allow fluid to pass from the interior of the tube into a plenum. The channels are made by cutting grooves in the sleeve, the grooves widened at the surface of the sleeve and then a strip of sleeve material is welded to the grooves closing the channels. Preferably the sleeve is packed with powdered graphite before cutting the grooves and welding the strips.

McKay, Mark D. (1426 Socastee Dr., North Augusta, SC 29841); Sweeney, Chad E. (3600 Westhampton Dr., Martinez, GA 30907-3036); Spangler, Jr., B. Samuel (2715 Margate Dr., Augusta, GA 30909)

1993-01-01T23:59:59.000Z

457

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1996. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar in research and development, specialty alloys, and other applications. Optoelectronic devices were used

458

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2006. One company in Utah  

E-Print Network [OSTI]

circuits. Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

459

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1998. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

460

P44 ECS Solid State Letters, 2 (5) P44-P46 (2013) 2162-8742/2013/2(5)/P44/3/$31.00 The Electrochemical Society  

E-Print Network [OSTI]

Electrically Confined Quantum Dot Intersubband Optoelectronic Devices Wei Wu, Dibyendu Dey, Omer G 60208 email: hmohseni@ece.northwestern.edu Intersubband optoelectronic devices such as mid

Mohseni, Hooman

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

2011 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimAdv. Mater. 2011, XX, 17 1 www.advmat.de  

E-Print Network [OSTI]

cost-effective integration of in- frared optoelectronic devices with well-established silicon been able to produce the high quality electronic material needed in optoelectronic devices, since

Atwater, Harry

462

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2000. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

463

Virginia Tech College of Science Faculty Position in Nanoscience  

E-Print Network [OSTI]

Cambridge University Press, Cambridge, 1972). S.L. Chuang, Physics of Optoelectronic Devices (Wiley, New York, 1995). P. Bhattacharya, Semiconductor Optoelectronic Devices (Prentice Hall, Englewood Cliffs

Virginia Tech

464

Published: July 20, 2011 r 2011 American Chemical Society 3033 dx.doi.org/10.1021/am200541p |ACS Appl. Mater. Interfaces 2011, 3, 30333041  

E-Print Network [OSTI]

output couplers for far-infrared lasers W. A. Bailey, Jr. Photonics and Optoelectronic Devices, Massachusetts 01854 W. D. Goodhue Photonics and Optoelectronic Devices Fabrication Laboratory, University

Ciobanu, Cristian

465

DOI: 10.1126/science.1214355 , 611 (2011);334Science  

E-Print Network [OSTI]

Cambridge University Press, Cambridge, 1972). S.L. Chuang, Physics of Optoelectronic Devices (Wiley, New York, 1995). P. Bhattacharya, Semiconductor Optoelectronic Devices (Prentice Hall, Englewood Cliffs

Bedwell, David M.

466

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2012. One company in Utah  

E-Print Network [OSTI]

consumed was used in integrated circuits (ICs). Optoelectronic devices, which include laser diodes, light. Optoelectronic devices were used in areas such as aerospace, consumer goods, industrial equipment, medical

467

COURSE SYLLABUS OSE 4470 FALL 2014 `FIBER-OPTIC COMMUNICATIONS'  

E-Print Network [OSTI]

of optical fiber communication systems including the optoelectronic devices used in transmitters) Optoelectronic devices used in transmitters, receivers, and multiplexers. 3) Design of the overall communication

Van Stryland, Eric

468

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2008. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

469

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2005. One company in Utah  

E-Print Network [OSTI]

circuits. Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

470

Subband gap impact ionization and excitation in carbon nanotube transistors  

E-Print Network [OSTI]

nanomaterials, semiconductor and optoelectronic devices, lasers and their applications. The specialization ELEC 462 Optoelectronic Devices PHYS 302 Intermediate Electrodynamics PHYS 311 Introduction to Quantum

Alam, Muhammad A.

471

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2007. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

472

PHOTONIC ATM FRONT-END PROCESSOR OBJECTIVES  

E-Print Network [OSTI]

components require active temperature stabilization for optimum performance. Most optoelectronic devices used to be monolithically integrated with optoelectronic devices, thereby considerably reducing size and cost constraints [2

Chao, Jonathan

473

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2009. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

474

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2010. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

475

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1999. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

476

Received 23 Apr 2013 | Accepted 29 Aug 2013 | Published 25 Sep 2013 Performance enhancement of metal nanowire  

E-Print Network [OSTI]

for window electrodes in solid- state optoelectronic devices. However, the catalytic activity to redox as window electrodes in optoelectronic devices. However, there exist major technical issues associated

Cui, Yi

477

Specialization Area Courses 2014-2015 ECE undergraduate degrees are organized around a core of required courses and a selection of elective courses from four  

E-Print Network [OSTI]

. The waveguides presented herein provide a feasible solution to bridge discrete optoelectronic devices having various optoelectronic devices [9]­[11]. However, there is no existing optoelec- tronic

478

Experimental and Computational Thermochemical Study of 2-and 3-Thiopheneacetic Acid Methyl Esters  

E-Print Network [OSTI]

, biodiagnostics, electronic and optoelectronic devices, and conductive polymers. The present study reports found widespread use in modern drug design,3 biodiagnostics,4 electronic and optoelectronic devices,5

Chickos, James S.

479

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2011. One company in Utah  

E-Print Network [OSTI]

consumed was used in integrated circuits (ICs). Optoelectronic devices, which include laser diodes, light% was used in research and development, specialty alloys, and other applications. Optoelectronic devices were

480

Study of GaN:Eu3+ Thin Films Deposited by Metallorganic  

E-Print Network [OSTI]

as an advantageous architecture for transparent electrodes in optoelectronic devices due primarily to high characteristics of electrodes in optoelectronic devices and in supercapactiors, we introduced oxide thin films

McKittrick, Joanna

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1997. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

482

NATURE PHYSICS | VOL 8 | AUGUST 2012 | www.nature.com/naturephysics 581 news & views  

E-Print Network [OSTI]

limit of light will be crucial for combining nanoelectronics and optoelectronic devices as the backbone of optoelectronic devices, with applications as diverse as light harvesting, photodetectors

Loss, Daniel

483

Fuel vapor control device  

SciTech Connect (OSTI)

A fuel vapor control device is described having a valve opening and closing a passage connecting a carburetor and a charcoal canister according to a predetermined temperature. A first coil spring formed by a ''shape memory effect'' alloy is provided to urge the valve to open the passage when the temperature is high. A second coil spring urges the valve to close the passage. A solenoid is provided to urge an armature against the valve to close the passage against the force of the first coil spring when the engine is running. The solenoid heats the first coil spring to generate a spring force therein when the engine is running. When the engine is turned off, the solenoid is deactivated, and the force of the first spring overcomes the force of the second spring to open the passage until such time as the temperature of the first spring drops below the predetermined temperature.

Ota, I.; Nishimura, Y.; Nishio, S.; Yogo, K.

1987-10-20T23:59:59.000Z

484

Ceramics for fusion devices  

SciTech Connect (OSTI)

Ceramics are required for a number of applications in fusion devices, among the most critical of which are magnetic coil insulators, windows for RF heating systems, and structural uses. Radiation effects dominate consideration of candidate materials, although good pre-irradiation properties are a requisite. Materials and components can be optimized by careful control of chemical and microstructural content, and application of brittle material design and testing techniques. Future directions for research and development should include further extension of the data base in the areas of electrical, structural, and thermal properties; establishment of a fission neutron/fusion neutron correlation including transmutation gas effects; and development of new materials tailored to meet the specific needs of fusion reactors.

Clinard, F.W. Jr.

1984-01-01T23:59:59.000Z

485

False color viewing device  

DOE Patents [OSTI]

This invention consists of a viewing device for observing objects in near-infrared false-color comprising a pair of goggles with one or more filters in the apertures, and pads that engage the face for blocking stray light from the sides so that all light reaching, the user`s eyes come through the filters. The filters attenuate most visible light and pass near-infrared (having wavelengths longer than approximately 700 nm) and a small amount of blue-green and blue-violet (having wavelengths in the 500 to 520 nm and shorter than 435 nm, respectively). The goggles are useful for looking at vegetation to identify different species and for determining the health of the vegetation, and to detect some forms of camouflage.

Kronberg, J.W.

1991-05-08T23:59:59.000Z

486

Electrical safety device  

DOE Patents [OSTI]

An electrical safety device for use in power tools that is designed to automatically discontinue operation of the power tool upon physical contact of the tool with a concealed conductive material. A step down transformer is used to supply the operating power for a disconnect relay and a reset relay. When physical contact is made between the power tool and the conductive material, an electrical circuit through the disconnect relay is completed and the operation of the power tool is automatically interrupted. Once the contact between the tool and conductive material is broken, the power tool can be quickly and easily reactivated by a reset push button activating the reset relay. A remote reset is provided for convenience and efficiency of operation.

White, David B. (Greenock, PA)

1991-01-01T23:59:59.000Z

487

Disposable Electrochemical Immunosensor Diagnosis Device Based...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Disposable Electrochemical Immunosensor Diagnosis Device Based on Nanoparticle Probe and Immunochromatographic Strip. Disposable Electrochemical Immunosensor Diagnosis Device Based...

488

Alta Devices | Open Energy Information  

Open Energy Info (EERE)

Devices Devices Jump to: navigation, search Name Alta Devices Place Santa Clara, California Zip 95054 Product California-based stealth mode company developing low-cost compound-PV-semiconductors. Website https://www.altadevices.com/ References Alta Devices[1] Information About Partnership with NREL Partnership with NREL Yes Partnership Type Incubator Partnering Center within NREL National Center for Photovoltaics Partnership Year 2010 Link to project description http://www.nrel.gov/news/press/2010/802.html LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Alta Devices is a company located in Santa Clara, California . References ↑ "Alta Devices" Retrieved from

489

Optoelectronic down-conversion by four-wave mixing in a highly nonlinear fiber for millimeter-wave and THz phase-locking  

E-Print Network [OSTI]

Optoelectronic down-conversion of a THz optical beatnote to a RF intermediate frequency is performed with a standard Mach-Zehnder modulator followed by a zero dispersion-slope fiber. The two interleaved optical spectra obtained by four-wave mixing are shown to contain more than 75 harmonics enabling to conveniently recover the phase noise of a beatnote at 770 GHz at around 500 MHz. This four-wave mixing down-conversion technique is implemented in a two-frequency solid-state laser in order to directly phase-lock its 168 GHz beatnote to a 10 MHz local oscillator.

Rolland, Antoine; Brunel, Marc; Alouini, Mehdi

2014-01-01T23:59:59.000Z

490

Reading Municipal Light Department - Business Lighting Rebate Program |  

Broader source: Energy.gov (indexed) [DOE]

Reading Municipal Light Department - Business Lighting Rebate Reading Municipal Light Department - Business Lighting Rebate Program Reading Municipal Light Department - Business Lighting Rebate Program < Back Eligibility Agricultural Commercial Fed. Government Industrial Institutional Local Government Nonprofit Schools State Government Savings Category Appliances & Electronics Commercial Lighting Lighting Maximum Rebate Commercial Customers: $10,000 per calendar year Municipal Customers: $15,000 per calendar year Program Info State Massachusetts Program Type Utility Rebate Program Rebate Amount T-8/T-5 Lamp with Electronic Ballasts: $11 - $35/fixture Interior High Output Lamp with Electronic Ballasts: $100/fixture De-lamping: $4 - $9/lamp Lighting Sensors: $20/sensor LED Exit Signs: $20/fixture Provider Incentive Programs

491

Microbiopsy/precision cutting devices  

DOE Patents [OSTI]

Devices are disclosed for performing tissue biopsy on a small scale (microbiopsy). By reducing the size of the biopsy tool and removing only a small amount of tissue or other material in a minimally invasive manner, the risks, costs, injury and patient discomfort associated with traditional biopsy procedures can be reduced. By using micromachining and precision machining capabilities, it is possible to fabricate small biopsy/cutting devices from silicon. These devices can be used in one of four ways (1) intravascularly, (2) extravascularly, (3) by vessel puncture, and (4) externally. Additionally, the devices may be used in precision surgical cutting. 6 figs.

Krulevitch, P.A.; Lee, A.P.; Northrup, M.A.; Benett, W.J.

1999-07-27T23:59:59.000Z

492

Microbiopsy/precision cutting devices  

DOE Patents [OSTI]

Devices for performing tissue biopsy on a small scale (microbiopsy). By reducing the size of the biopsy tool and removing only a small amount of tissue or other material in a minimally invasive manner, the risks, costs, injury and patient discomfort associated with traditional biopsy procedures can be reduced. By using micromachining and precision machining capabilities, it is possible to fabricate small biopsy/cutting devices from silicon. These devices can be used in one of four ways 1) intravascularly, 2) extravascularly, 3) by vessel puncture, and 4) externally. Additionally, the devices may be used in precision surgical cutting.

Krulevitch, Peter A. (Pleasanton, CA); Lee, Abraham P. (Walnut Creek, CA); Northrup, M. Allen (Berkeley, CA); Benett, William J. (Livermore, CA)

1999-01-01T23:59:59.000Z

493

Automated control of microfluidics devices.  

E-Print Network [OSTI]

??In order for microfluidics devices to be marketable, they must be inexpensive and easy to use. Two projects were pursued in this study for this (more)

Gerstel, Ian.

2010-01-01T23:59:59.000Z

494

Rnnotator: an automated de novo transcriptome assembly pipeline from stranded RNA-Seq reads  

E-Print Network [OSTI]

transcriptome assembly pipeline from stranded RNA-Seq readsRnnotator assembly pipeline. Figure 2. Read dereplicationan automated software pipeline that generates transcript

Martin, Jeffrey

2011-01-01T23:59:59.000Z

495

E-Print Network 3.0 - automatic meter reading Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

fine grained pricing schemes, automatic meter reading, demand response... to demand measurement and billing. Meters supporting automatic meter reading (AMR) can report demand......

496

E-Print Network 3.0 - array devices high-dynamic Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

at Stony Brook, Department of Electrical Engineering and Computer Engineering, Optoelectronics Research Group Collection: Engineering 2 A NOVEL AVALANCHE-FREE SINGLE PHOTON...

497

Temperature differential detection device  

DOE Patents [OSTI]

A temperature differential detection device for detecting the temperature differential between predetermined portions of a container wall is disclosed as comprising a Wheatstone bridge circuit for detecting resistance imbalance with a first circuit branch having a first elongated wire element mounted in thermal contact with a predetermined portion of the container wall, a second circuit branch having a second elongated wire element mounted in thermal contact with a second predetermined portion of a container wall with the wire elements having a predetermined temperature-resistant coefficient, an indicator interconnected between the first and second branches remote from the container wall for detecting and indicating resistance imbalance between the first and second wire elements, and connector leads for electrically connecting the wire elements to the remote indicator in order to maintain the respective resistance value relationship between the first and second wire elements. The indicator is calibrated to indicate the detected resistance imbalance in terms of a temperature differential between the first and second wall portions.

Girling, Peter M. (Allentown, PA)

1986-01-01T23:59:59.000Z

498

How to Add Your Own Reading Comprehension Passage  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Adding Your Own Reading Comprehension Passage Adding Your Own Reading Comprehension Passage Please follow these instructions for submitting a reading comprehension passage: Use a text editor or word processor to create your reading comprehension passage. Since Jefferson Lab is a basic physics research facility, passages that incorporate some aspect of science are preferred over passages that do not. Make certain that your passage is accessible to a general audience. While you are creating this passage primarily for your classes' benefit, realize that anyone on the internet will be able to view it. The passage should make sense to anyone, not just to those in your class. Check your passage for: Factual accuracy Correct spelling Correct punctuation Proper grammar Once you have your passage, place brackets ([]) around the words you

499

ARM - Reading netCDF, HDF, and GRIB Files  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

DocumentationReading netCDF, HDF, and GRIB Files DocumentationReading netCDF, HDF, and GRIB Files Policies, Plans, Descriptions Data Documentation Home Data Sharing and Distribution Policy Data Management and Documentation Plan Data Product Registration and Submission Reading netCDF and HDF Data Files Time in ARM netCDF Data Files Data Archive Documentation ARM Archive's Catalog of Data Streams (Updated monthly) Access to Historical ARM Data More on Understanding and Finding ARM Data Data Quality Problem Reporting Reading netCDF, HDF, and GRIB Files netCDF Files Most ARM data are stored in netCDF format. This format allows for the definition of data fields and storage of operational information in the header of the file. All ARM netCDF files are in UTC time and represent time as "seconds since January 1, 1970,'' which is called the "epoch time.'' For

500

Golden Reading Room: FINAL Environmental Assessments (EAs) and FONSIs  

Broader source: Energy.gov [DOE]

Below are electronic versions of Golden Field Office Reading Room documents that were created after November 1, 1996, per the requirements of the Electronic Freedom of Information Act Amendment of...