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While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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1

Optoelectronic device  

DOE Patents [OSTI]

The invention is an optoelectronic device comprising an active portion which converts light to electricity or converts electricity to light, the active portion having a front side for the transmittal of the light and a back side opposite from the front side, at least two electrical leads to the active portion to convey electricity to or from the active portion, an enclosure surrounding the active portion and through which the at least two electrical leads pass wherein the hermetically sealed enclosure comprises at the front side of the active portion a barrier material which allows for transmittal of light, one or more getter materials disposed so as to not impede the transmission of light to or from the active portion, and a contiguous gap pathway to the getter material which pathway is disposed between the active portion and the barrier material.

Bonekamp, Jeffrey E.; Boven, Michelle L.; Gaston, Ryan S.

2014-09-09T23:59:59.000Z

2

"Develop enabling optoelectronic devices for broadband  

E-Print Network [OSTI]

"Develop enabling optoelectronic devices for broadband communications and photonic systems Group Our group focuses on optoelectronic devices and photonic integrated circuits to photodiodes with the highest linearity and output power to date. High-Speed Optoelectronic Devices Driven

Acton, Scott

3

Technische Universiteit Eindhoven Opto-Electronic Devices  

E-Print Network [OSTI]

in micro­ and optoelectronic devices. TUHH Heinrich Voss Iterative projection methods New Orleans 2005 4 and their potential for applications in micro­ and optoelectronic devices. In such nanostructures, the free carriers of their special physical properties and their potential for applications in micro­ and optoelectronic devices

Lipari, Giuseppe

4

Cadmium Zinc Oxide Based Optoelectronics Materials and Devices  

E-Print Network [OSTI]

201907. [45] 2010 Optoelectronics Market Report. Databeans,candidate of wide bandgap optoelectronics applications, ZnOZinc Oxide Based Optoelectronics Materials and Devices A

Li, Lin

2011-01-01T23:59:59.000Z

5

Nanosized Optoelectronic Devices Based on Photoactivated Proteins Alice Dimonte,*,  

E-Print Network [OSTI]

Nanosized Optoelectronic Devices Based on Photoactivated Proteins Alice Dimonte,*, Stefano Frache gold electrodes have been used to develop optoelectronic devices based on photoactive proteins

De Micheli, Giovanni

6

Radiation effects in optoelectronic devices. [Review  

SciTech Connect (OSTI)

Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given.

Barnes, C.E.; Wiczer, J.J.

1984-05-01T23:59:59.000Z

7

Elastic fields in optoelectronic devices John H. Davies  

E-Print Network [OSTI]

optoelectronic devices with enhanced performances (Mitzi et al. 1995). Indeed, such layered structures have been

Davies, John H.

8

Monolithic integration of thin-film coolers with optoelectronic devices  

E-Print Network [OSTI]

Monolithic integration of thin-film coolers with optoelectronic devices Christopher La Barbara, California 93106-9560 Abstract. Active refrigeration of optoelectronic components through the use manuscript received June 30, 2000; accepted for publication June 30, 2000. 1 Introduction Optoelectronic

9

Optoelectronics Devices Based on Zinc Oxide Thin Films and Nanostructures  

E-Print Network [OSTI]

is promising for UV optoelectronics, such as photodetectors,for future ZnO optoelectronics. References . zgr, Ya. I.OF THE DISSERTATION Optoelectronics Devices Based on Zinc

Chu, Sheng

2011-01-01T23:59:59.000Z

10

Optoelectronic semiconductor device and method of fabrication  

DOE Patents [OSTI]

An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.

Cui, Yi; Zhu, Jia; Hsu, Ching-Mei; Fan, Shanhui; Yu, Zongfu

2014-11-25T23:59:59.000Z

11

Identification of Emergent Research Issues: the Case of Optoelectronic Devices  

E-Print Network [OSTI]

7 Identification of Emergent Research Issues: the Case of Optoelectronic Devices Ivana Roche1-City-Stra?e 1, 1220 Wien 1France 2Austria 1. Introduction The optoelectronic devices field is one of the last, published in "openelectroonic Devices and Properties (2011)" #12;Optoelectronic Devices and Properties126

Paris-Sud XI, Université de

12

Functionalized polyfluorenes for use in optoelectronic devices  

DOE Patents [OSTI]

The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

Chichak, Kelly Scott (Clifton Park, NY); Lewis, Larry Neil (Scotia, NY); Cella, James Anthony (Clifton Park, NY); Shiang, Joseph John (Niskayuna, NY)

2011-11-01T23:59:59.000Z

13

Femtosecond-laser Microstructuring of Silicon for Novel Optoelectronic Devices  

E-Print Network [OSTI]

Femtosecond-laser Microstructuring of Silicon for Novel Optoelectronic Devices A thesis presented Femtosecond-laser Microstructuring of Silicon for Novel Optoelectronic Devices Eric Mazur James E. Carey III silicon and reports on its first application in optoelectronic devices. Irradia- tion of a silicon surface

Mazur, Eric

14

Impact of optical antennas on active optoelectronic devices  

E-Print Network [OSTI]

Impact of optical antennas on active optoelectronic devices Alireza Bonakdar and Hooman Mohseni that are integrated with optoelectronic devices. Herein, we describe the fundamental reasons for and experimental antennas with optoelectronic devices can lead to the realization of highly compact multifunctional

Mohseni, Hooman

15

Optical and optoelectronic fiber devices  

E-Print Network [OSTI]

The ability to integrate materials with disparate electrical, thermal, and optical properties into a single fiber structure enabled the realization of fiber devices with diverse and complex functionalities. Amongst those, ...

Shapira, Ofer, Ph. D. Massachusetts Institute of Technology

2007-01-01T23:59:59.000Z

16

Exploiting Collective Effects of Multiple Optoelectronic Devices Integrated in a  

E-Print Network [OSTI]

Exploiting Collective Effects of Multiple Optoelectronic Devices Integrated in a Single Fiber. In this work, we demonstrate the successful fabrication of an eight-device cascaded optoelectronic fiber of integrating multiple optoelectronic components into a single fiber cross-section. This is in fact a common

California at Irvine, University of

17

14:332:466 Optoelectronic Devices Instructor: Prof. Wei Jiang  

E-Print Network [OSTI]

14:332:466 Optoelectronic Devices Fall 2010 Instructor: Prof. Wei Jiang Time & Place: T.Th 6:40pm-8: (732) 445-2164 Course Catalog Description: 14:332:466 Optoelectronic Devices (3) Pre-Requisite Courses), ISBN 0471358320 S. O. Kasap, Optoelectronics and photonics: principles and practices, Prentice

Jiang, Wei

18

14:332:466 Optoelectronic Devices Instructor: Prof. Wei Jiang  

E-Print Network [OSTI]

14:332:466 Optoelectronic Devices Fall 2009 Instructor: Prof. Wei Jiang Time & Place: T.Th 6:40pm-8@rci.rutgers.edu Phone: (732) 445-2164 Course Catalog Description: 14:332:466 Optoelectronic Devices (3) Pre), ISBN 0471358320 · S. O. Kasap, Optoelectronics and photonics: principles and practices, Prentice

Jiang, Wei

19

14:332:466 Optoelectronic Devices Instructor: Prof. Wei Jiang  

E-Print Network [OSTI]

14:332:466 Optoelectronic Devices Fall 2011 Instructor: Prof. Wei Jiang Time & Place: T.Th 6:40pm-8: (732) 445-2164 Course Catalog Description: 14:332:466 Optoelectronic Devices (3) Pre-Requisite Courses of Photonics, Wiley-Interscience, 2nd edition (2007), ISBN 0471358320 S. O. Kasap, Optoelectronics

Jiang, Wei

20

header for SPIE use Integrated cooling for optoelectronic devices  

E-Print Network [OSTI]

header for SPIE use Integrated cooling for optoelectronic devices Christopher LaBounty*a , Ali refrigeration of optoelectronic components through the use of thin film solid state coolers based on III 1. INTRODUCTION Optoelectronic devices such as laser sources, switching/routing elements

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Optoelectronic device with nanoparticle embedded hole injection/transport layer  

DOE Patents [OSTI]

An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

Wang, Qingwu (Chelmsford, MA); Li, Wenguang (Andover, MA); Jiang, Hua (Methuen, MA)

2012-01-03T23:59:59.000Z

22

Fundamental approach for optoelectronic and microfluidic integration for miniaturizing spectroscopic devices  

E-Print Network [OSTI]

Fundamental approach for optoelectronic and microfluidic integration for miniaturizing, optoelectronic, soft lithography 1. INTRODUCTION Over the past few years, the application of micromachining. This property allows for integration of elastomer microfluidic devices and optoelectronic devices to perform

Quake, Stephen R.

23

Functionalized polyfluorenes for use in optoelectronic devices  

DOE Patents [OSTI]

The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## wherein R.sup.1 and R.sup.2 are independently alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.5is H or CHO; R.sup.3 and R.sup.4 are independently hydrogen, alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.11 and R.sup.12 taken together form a substituted or unsubstituted monocyclic or bicyclic heteroaromatic ring; R.sup.13 is independently at each occurrence halo, nitro, hydroxy, amino, alkyl, aryl, arylalkyl, alkoxy, substituted alkoxy, substituted alkyl, substituted aryl, or substituted arylalkyl; Ar is aryl, heteroaryl, substituted aryl, substituted heteroaryl, or a combination thereof; X is selected from a direct bond, alky, substituted alkyl, and combinations thereof; Y is CHO or NH.sub.2; Z is CHO or NH.sub.2 where Z does not equal Y; and p is 0, 1 or 2. The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

Chichak, Kelly Scott (Clifton Park, NY); Lewis, Larry Neil (Scotia, NY); Cella, James Anthony (Clifton Park, NY); Shiang, Joseph John (Niskayuna, NY)

2011-11-08T23:59:59.000Z

24

Emissive polymeric materials for optoelectronic devices  

DOE Patents [OSTI]

Polymers including at least one structural unit derived from a compound of formula I or including at least one pendant group of formula II may be used in optoelectronic devices ##STR00001## wherein R.sup.1, R.sup.3, R.sup.4 and R.sup.6 are independently hydrogen, alkyl, alkoxy, oxaalkyl, alkylaryl, aryl, arylalkyl, heteroaryl, substituted alkyl; substituted alkoxy, substituted oxaalkyl, substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted heteroaryl; R.sup.1a is hydrogen or alkyl; R.sup.2 is alkylene, substituted alkylene, oxaalkylene, CO, or CO.sub.2; R.sup.2a is alkylene; R.sup.5 is independently at each occurrence hydrogen, alkyl, alkylaryl, aryl, arylalkyl, alkoxy, carboxy, substituted alkyl; substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted alkoxy, X is halo, triflate, --B(OR.sup.1a).sub.2, or ##STR00002## located at the 2, 5- or 2, 7-positions; and L is derived from phenylpyridine, tolylpyridine, benzothienylpyridine, phenylisoquinoline, dibenzoquinozaline, fluorenylpyridine, ketopyrrole, 2-(1-naphthyl)benzoxazole)), 2-phenylbenzoxazole, 2-phenylbenzothiazole, coumarin, thienylpyridine, phenylpyridine, benzothienylpyridine, 3-methoxy-2-phenylpyridine, thienylpyridine, phenylimine, vinylpyridine, pyridylnaphthalene, pyridylpyrrole, pyridylimidazole, phenylindole, derivatives thereof or combinations thereof.

Shiang, Joseph John (Niskayuna, NY); Chichak, Kelly Scott (Clifton Park, NY); Cella, James Anthony (Clifton Park, NY); Lewis, Larry Neil (Scotia, NY); Janora, Kevin Henry (Schenectady, NY)

2011-07-05T23:59:59.000Z

25

PHYSICAL AND ELECTRICAL PROPERTIES OF In2O3 : Sn FILMS. APPLICATIONS TO OPTOELECTRONIC DEVICES  

E-Print Network [OSTI]

threshold, which constitutes the major drawback for LN based-optoelectronic devices, even for low power

Boyer, Edmond

26

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication Applications  

E-Print Network [OSTI]

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication ApplicationsGe/Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. In There is immense interest in the realization of Si-based optoelectronic devices, optoelectronic integrated circuits

Rieh, Jae-Sung

27

The rapid progress of nanoscale science and technology challenges the optoelectronics community to develop ever smaller lasers and other optoelectronic devices compatible with  

E-Print Network [OSTI]

The miniaturization of optoelectronic devices such as light emitting diodes or semiconduc- tor lasers, is expected

Wu, Shin-Tson

28

Method of fabricating an optoelectronic device having a bulk heterojunction  

DOE Patents [OSTI]

A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.

Shtein, Max (Ann Arbor, MI); Yang, Fan (Princeton, NJ); Forrest, Stephen R. (Princeton, NJ)

2008-10-14T23:59:59.000Z

29

Optoelectronic devices utilizing materials having enhanced electronic transitions  

DOE Patents [OSTI]

An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Black, Marcie R.

2013-04-09T23:59:59.000Z

30

Optoelectronic devices utilizing materials having enhanced electronic transitions  

DOE Patents [OSTI]

An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

Black, Marcie R. (Newton, MA)

2011-02-22T23:59:59.000Z

31

Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer  

DOE Patents [OSTI]

An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

Thompson, Mark E. (Anaheim Hills, CA); Li, Jian (Los Angeles, CA); Forrest, Stephen (Princeton, NJ); Rand, Barry (Princeton, NJ)

2011-02-22T23:59:59.000Z

32

Epsilon Near Zero mode for active optoelectronic devices S. Vassant,1, 2  

E-Print Network [OSTI]

are the basis for today's optoelectronic devices like white LEDs, blue/green lasers, UV photodetectors and LEDs-nitrides is hence likely to lead to novel optoelectronic devices. While there has been a lot of work on the use

Paris-Sud XI, Université de

33

Electrically Confined Quantum Dot Intersubband Optoelectronic Devices Wei Wu, Dibyendu Dey, Omer G. Memis, Alex Katnelson, and *Hooman Mohseni  

E-Print Network [OSTI]

and optoelectronic devices, lasers and their applications. The Systems area focuses on wireless communication systems 361 Quantum Mechanics For Engineers ELEC 462 Optoelectronic Devices PHYS 302 Intermediate

Mohseni, Hooman

34

ECE 308 -Spring 2005 Physics and Models of Electronics and Optoelectronics Devices (3)  

E-Print Network [OSTI]

ECE 308 - Spring 2005 Physics and Models of Electronics and Optoelectronics Devices (3) Lecture Heterostructure (Lecture Notes) 9. Semiconductor Optoelectronic Devices: Lasers, LEDs, Photodiodes, and Solar of semiconductor optoelectronic devices. Homework Policy: 1. Homework is given on every Thursday, and due

Gilchrist, James F.

35

ZnO Nanowire Array-Based Optoelectronic Devices  

E-Print Network [OSTI]

for future flexible optoelectronics application. 2.5nanoelectronics and optoelectronics. In this dissertation,nanoelectronics and optoelectronics. Ag, a group Ib element,

Wang, Guoping

2011-01-01T23:59:59.000Z

36

Optoelectronic devices for optical chaos communications Claudio R. Mirassoa, Ingo Fischerb, Laurent Largerc  

E-Print Network [OSTI]

Optoelectronic devices for optical chaos communications Claudio R. Mirassoa, Ingo Fischerb, Laurent-of-the-art in optoelectronic devices for chaos generation and message encryption. We concentrate on two kind of chaos based also work when using incoherent optical feedback9 or linear optoelectronic feedback.10 The success

Fischer, Ingo

37

Sol-gel coatings for optoelectronic devices  

SciTech Connect (OSTI)

Nb{sub 2}O{sub 5} prepared by a sol-gel process in form of coatings and aerogels are new materials which present interesting properties: (a) The coatings present electrochromic properties and exhibit a blue coloration under Li{sup +} insertion with 100% reversible variation of the optical transmission in the visible and near infrared range between 80% and 200% and have a high chemical stability (tested up to 2,000 cycles). (b) They are semiconductor and present a photoelectric effect when illuminating in the UV region ({lambda} < 360 nm). These films are therefore very promising to be used in electrochromic devices, as electrodes for photoelectrochemical purpose and the development of nanocrystalline solar cell. (c) When prepared in aerogel form, the high BET surface area of the powders is a promising asset to use these new materials for catalytic purposes for air pollution control.

Avellaneda, C.O.; Macedo, M.A.; Florentino, A.O.; Aegerter, M.A. [Univ. of Sao Paulo, Sao Carlos (Brazil). Inst. de Fisica e Quimica

1994-12-31T23:59:59.000Z

38

Preparation of Optoelectronic Devices Based on AlN/AlGaN Superlattices M. Holtz,a,b  

E-Print Network [OSTI]

of QDs also suggest strategies for improving the efficiency of optoelectronic devices through vectorial

Holtz, Mark

39

Method And Apparatus For Coupling Optical Elements To Optoelectronic Devices For Manufacturing Optical Transceiver Modules  

DOE Patents [OSTI]

A process is provided for aligning and connecting at least one optical fiber to at least one optoelectronic device so as to couple light between at least one optical fiber and at least one optoelectronic device. One embodiment of this process comprises the following steps: (1) holding at least one optical element close to at least one optoelectronic device, at least one optical element having at least a first end; (2) aligning at least one optical element with at least one optoelectronic device; (3) depositing a first non-opaque material on a first end of at least one optoelectronic device; and (4) bringing the first end of at least one optical element proximate to the first end of at least one optoelectronic device in such a manner that the first non-opaque material contacts the first end of at least one optoelectronic device and the first end of at least one optical element. The optical element may be an optical fiber, and the optoelectronic device may be a vertical cavity surface emitting laser. The first non-opaque material may be a UV optical adhesive that provides an optical path and mechanical stability. In another embodiment of the alignment process, the first end of at least one optical element is brought proximate to the first end of at least one optoelectronic device in such a manner that an interstitial space exists between the first end of at least one optoelectronic device and the first end of at least one optical element.

Anderson, Gene R. (Albuquerque, NM); Armendariz, Marcelino G. (Albuquerque, NM); Bryan, Robert P. (Albuquerque, NM); Carson, Richard F. (Albuquerque, NM); Chu, Dahwey (Albuquerque, NM); Duckett, III, Edwin B. (Albuquerque, NM); Giunta, Rachel Knudsen (Albuquerque, NM); Mitchell, Robert T. (Albuquerque, NM); McCormick, Frederick B. (Albuquerque, NM); Peterson, David W. (Sandia Park, NM); Rising, Merideth A. (Santa Fe, NM); Reber, Cathleen A. (Corrales, NM); Reysen, Bill H. (Lafayette, CO)

2005-06-14T23:59:59.000Z

40

Thin film optical waveguide and optoelectronic device integration for fully embedded board level optical interconnects  

E-Print Network [OSTI]

Thin film optical waveguide and optoelectronic device integration for fully embedded board level on to the waveguide film. Measured propagation loss of the waveguide was 0.3dB/cm at 850nm. Keywords: optoelectronic between electronic and optoelectronic components as conventional approaches do, and additionally, real

Chen, Ray

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

An advanced diffusion model to identify emergent research issues: the case of optoelectronic devices  

E-Print Network [OSTI]

1 An advanced diffusion model to identify emergent research issues: the case of optoelectronic of keywords in published articles. In this paper we show how emerging topics in the field of optoelectronic the identified keywords were used to technological topics in the field of optoelectronic devices

Boyer, Edmond

42

Method of fabricating an optoelectronic device having a bulk heterojunction  

DOE Patents [OSTI]

A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode. As a further example, when the first layer is an electron acceptor layer, the first electrode is a cathode, the second layer is an electron donor layer, and the second electrode is an anode.

Shtein, Max (Princeton, NJ); Yang, Fan (Princeton, NJ); Forrest, Stephen R. (Princeton, NJ)

2008-09-02T23:59:59.000Z

43

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices  

DOE Patents [OSTI]

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Wanlass, Mark W.; Carapella, Jeffrey J.

2014-07-08T23:59:59.000Z

44

Research Staff Openings in Organic Optoelectronic Devices Contact Person: Dr. Wallace C.H. Choy, Department of Electrical and Electronic  

E-Print Network [OSTI]

Research Staff Openings in Organic Optoelectronic Devices Contact Person: Dr. Wallace C.H. Choy the quantum efficiency of organic optoelectronic devices particularly organic solar cells and then organic

Leung, Ka-Cheong

45

Optoelectronic devices based on electrically tunable pn diodes in a monolayer dichalcogenide  

E-Print Network [OSTI]

The pn junction is the functional element of many electronic and optoelectronic devices, including diodes, bipolar transistors, photodetectors, light-emitting diodes and solar cells. In conventional pn junctions, the ...

Baugher, Britton W. H.

46

Source and channel coding for low-bandwidth speech communication between optoelectronic devices  

E-Print Network [OSTI]

Optical communication is one solution to the communication problem that many military forces face in today's urban environments. The recent advances in optoelectronic fibers by the Photonic Bandgap Fibers and Devices Group ...

Perry, Daniel S

2009-01-01T23:59:59.000Z

47

The research of Dr. Rafi Shikler is focused on organic and organic/inorganic hybrid optoelectronic devices. In specifically to study the physical processes that take place  

E-Print Network [OSTI]

are discussed. The science and technology of electronic and optoelectronic devices based on organic -conjugated

Vardi, Amichay

48

3252 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 54, NO. 12, DECEMBER 2007 Silicon Germanium CMOS Optoelectronic Switching  

E-Print Network [OSTI]

Optoelectronic Switching Device: Bringing Light to Latch Ali K. Okyay, Student Member, IEEE, Duygu Kuzum, Student. Saraswat, Fellow, IEEE Abstract--We propose a novel semiconductor optoelectronic (OE) switch--Germanium, integrated optoelectronics, metal­ oxide­semiconductor field-effect transistor (MOSFET) switches, optical

Miller, David A. B.

49

Metamaterial mirrors in optoelectronic devices Majid Esfandyarpour1, Erik C. Garnett1, Yi Cui1,2, Michael D. McGehee1 and Mark L. Brongersma1  

E-Print Network [OSTI]

Metamaterial mirrors in optoelectronic devices Majid Esfandyarpour1, Erik C. Garnett1, Yi Cui1 is highly undesirable in optoelectronic devices that use metal films as both electrical contacts and optical optoelectronic devices becomes obvious when an active semiconductor layer is placed in direct contact

Cui, Yi

50

Physics of Optoelectronic and Plasmonic Devices: Cavities, Waveguides, Modulators and Lasers  

E-Print Network [OSTI]

electronics and optoelectronics: Exploring nanoscale scienceInternational Journal of Optoelectronics 11, 155-168 (impact of plasmonic lasers on optoelectronics integration is

Sorger, Volker J.

2011-01-01T23:59:59.000Z

51

Design of Optical Metamaterial Mirror with Metallic Nanoparticles for Broadband Light Absorption in Graphene Optoelectronic Devices  

E-Print Network [OSTI]

A general metallic mirror (i.e., a flat metallic surface) has been a popular optical component that can contribute broadband light absorption to thin-film optoelectronic devices; nonetheless, such electric mirror with a reversal of reflection phase inevitably causes the problem of minimized electric field near at the mirror surface (maximized electric field at one quarter of wavelength from mirror). This problem becomes more elucidated, when the deep-subwavelength-scaled two-dimensional (2D) material (e.g., graphene and molybdenum disulfide) is implemented into optoelectronic device as an active channel layer. The purpose of this work was to conceive the idea for using a charge storage layer (spherical Au nanoparticles (AuNPs), embedded into dielectric matrix) of the floating-gate graphene photodetector as a magnetic mirror, which allows the device to harness the increase in broadband light absorption. In particular, we systematically examined whether the versatile assembly of spherical AuNP monolayer within ...

Lee, Seungwoo

2015-01-01T23:59:59.000Z

52

2,5-linked polyfluorenes for optoelectronic devices  

DOE Patents [OSTI]

Polyfluorene polymers and copolymers having substantial amounts (10-100%) of fluorenes coupled at the 2 and 5 positions of fluorene are useful as active layers in OLED devices where triplet energies >2.10 eV are required.

Cella, James Anthony; Shiang, Joseph John; Shanklin, Elliott West; Smigelski, Paul Michael

2010-06-08T23:59:59.000Z

53

2,5-linked polyfluorenes for optoelectronic devices  

DOE Patents [OSTI]

Polyfluorene polymers and copolymers having substantial amounts (10-100%) of fluorenes coupled at the 2 and 5 positions of fluorene are useful as active layers in OLED devices where triplet energies >2.10 eV are required.

Cella, James Anthony (Clifton Park, NY); Shiang, Joseph John (Niskayuna, NY); Shanklin, Elliott West (Altamont, NY); Smigelski, Jr, Paul Michael (Scotia, NY)

2011-06-28T23:59:59.000Z

54

2,5-linked polyfluorenes for optoelectronic devices  

DOE Patents [OSTI]

Polyfluorene polymers and copolymers having substantial amounts (10-100%) of fluorenes coupled at the 2 and 5 positions of fluorene are useful as active layers in OLED devices where triplet energies >2.10 eV are required.

Cella, James Anthony (Clifton Park, NY); Shiang, Joseph John (Niskayuna, NY); Shanklin, Elliott West (Altamont, NY); Smigelski, Paul Michael (Scotia, NY)

2009-12-22T23:59:59.000Z

55

2,5-linked polyfluorenes for optoelectronic devices  

DOE Patents [OSTI]

Polyfluorene polymers and copolymers having substantial amounts (10-100%) of fluorenes coupled at the 2 and 5 positions of fluorene are useful as active layers in OLED devices where triplet energies >2.10 eV are required.

Cella, James Anthony (Clifton Park, NY); Shiang, Joseph John (Niskayuna, NY); Shanklin, Elliott West (Altamont, NY); Smigelski, Jr., Paul Michael (Scotia, NY)

2011-11-08T23:59:59.000Z

56

0-7803-8363-X/04/$20.00 2004 IEEE 20th IEEE SEMI-THERM Symposium Superlattice Microrefrigerators Flip-Chip Bonded with Optoelectronic Devices  

E-Print Network [OSTI]

Flip-Chip Bonded with Optoelectronic Devices Yan Zhang1 , Gehong Zeng1 , Joachim Piprek2 , Avram Bar these microrefrigerator with the optoelectronic chips. Preliminary 3D electrothermal simulation will be present to analyze to microrefrigerator mA 1. Introduction Current trends in optoelectronic devices are to increase the speed, multi

57

Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby  

DOE Patents [OSTI]

A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu

2014-04-01T23:59:59.000Z

58

Opto-Electron. Rev., 19, no. 3, 2011 I Opto-Electronics Review  

E-Print Network [OSTI]

electrodes in optoelectronic devices, electrical sheet resistance and optical transmittance are two) are essential components for numerous optoelectronic devices that require transport of both electrons

New Mexico, University of

59

ECE 451 -Fall 2011 Physics of Semiconductor Devices (3)  

E-Print Network [OSTI]

ECE 451 - Fall 2011 Physics of Semiconductor Devices (3) Electronics and Optoelectronics-Photon Scattering Processes (Optional) 18. Novel Optoelectronics and Electronics Devices (Optional) Structure on Semiconductor Physics and Device Physics, Draft Version (2010). Other Additional References or Readings: 1. J

Gilchrist, James F.

60

Microfabrication in optoelectronics (Opti-677) Instructor: Mahmoud Fallahi  

E-Print Network [OSTI]

Microfabrication in optoelectronics (Opti-677) Instructor: Mahmoud Fallahi 2 credit course and optoelectronic components. It covers epitaxial growth, lithography and processing steps of compound semiconductors frequently used in micro/nano-fabrication of optical and optoelectronic devices. Fabrication

Arizona, University of

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

EEE 437 Optoelectronics (3) [SS] Course (Catalog) Description  

E-Print Network [OSTI]

EEE 437 Optoelectronics (3) [SS] Course (Catalog) Description: Basic operating principles of various types of optoelectronic devices which play important roles in commercial and communication. Prerequisite: EEE 436. Textbook: J. Singh, Semiconductor Optoelectronics: An Introduction to Material

Zhang, Junshan

62

Integrated Quantum Optoelectronics Lab Integrated Quantum Optoelectronics Lab at University of Washington (UW), Seattle is seeking  

E-Print Network [OSTI]

Integrated Quantum Optoelectronics Lab Integrated Quantum Optoelectronics Lab at University-matter interaction to enable scalable, extremely low power opto-electronics. The applications, for which we are developing these opto-electronic devices, include efficient electro-optic modulators, optical computing

Washington at Seattle, University of

63

Optoelectronic Mounting Structure  

DOE Patents [OSTI]

An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

Anderson, Gene R. (Albuquerque, NM); Armendariz, Marcelino G. (Albuquerque, NM); Baca, Johnny R. F. (Albuquerque, NM); Bryan, Robert P. (Albuquerque, NM); Carson, Richard F. (Albuquerque, NM); Chu, Dahwey (Albuquerque, NM); Duckett, III, Edwin B. (Albuquerque, NM); McCormick, Frederick B. (Albuquerque, NM); Peterson, David W. (Sandia Park, NM); Peterson, Gary D. (Albuquerque, NM); Reber, Cathleen A. (Corrales, NM); Reysen, Bill H. (Lafayette, CO)

2004-10-05T23:59:59.000Z

64

Induced Optical Losses in Optoelectronic Devices due to Focused Ion Beam Damages  

E-Print Network [OSTI]

A study of damages caused by gallium focused ion beam (FIB) into III-V compounds is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analysis shows that local heating is negligible. Gallium implantation is shown to occur over areas tens of nanometers thick. Gallium accumulation as well as selective sputtering during III-V compounds milling is expected. Particularly, for GaAs, this effect leads to gallium segregation and formation of metallic clusters. Microdisk resonators were fabricated using FIB milling with different emission currents to analyze these effects on a device. It is shown that for higher emission current, thus higher implantation doses, the cavity quality factor rapidly decreases due to optical scattering losses induced by implanted gallium atoms.

Vallini, Felipe; Reis, Elohim Fonseca dos; von Zuben, Antnio Augusto; Frateschi, Newton Cesrio

2012-01-01T23:59:59.000Z

65

Polarization doping and the efficiency of III-nitride optoelectronic devices  

SciTech Connect (OSTI)

The intrinsic polarization is generally considered a nuisance in III-nitride devices, but recent studies have shown that it can be used to enhance p- and n-type conductivity and even to replace impurity doping. We show by numerical simulations that polarization-doped light-emitting diode (LED) structures have a significant performance advantage over conventional impurity-doped LED structures. Our results indicate that polarization doping decreases electric fields inside the active region and potential barriers in the depletion region, as well as the magnitude of the quantum-confined Stark effect. The simulations also predict at least an order of magnitude increase in the current density corresponding to the maximum efficiency (i.e., smaller droop) as compared to impurity-doped structures. The obtained high doping concentrations could also enable, e.g., fabrication of III-N resonant tunneling diodes and improved ohmic contacts.

Kivisaari, Pyry; Oksanen, Jani; Tulkki, Jukka [Department of Biomedical Engineering and Computational Science, Aalto University, P.O. Box 12200, FI-00076 Aalto (Finland)] [Department of Biomedical Engineering and Computational Science, Aalto University, P.O. Box 12200, FI-00076 Aalto (Finland)

2013-11-18T23:59:59.000Z

66

CONCEPTS FOR TEACHING OPTOELECTRONIC CIRCUITS AND SYSTEMS  

E-Print Network [OSTI]

CONCEPTS FOR TEACHING OPTOELECTRONIC CIRCUITS AND SYSTEMS Smail TEDJINI, Benoit PANNETIER, Laurent.Lastname@esisar.inpg.fr Keywords : Optoelectronic devices, optical signals, communication systems, modeling, simulation, CAD and design of optical communication and optoelectronic systems is now necessary for the engineers

Boyer, Edmond

67

Project/Research Opportunities Integrated Optoelectronics Group  

E-Print Network [OSTI]

Project/Research Opportunities Integrated Optoelectronics Group Department of Electrical-effective functional photonic/optoelectronic devices/circuits are at high demands now-a-days for applications-on-insulator (SOI) substrate has been established to be an attractive platform for a photonic/optoelectronic

Das, Bijoy Krishna

68

Mobile Collaboration: Collaboratively Reading and Creating Children's Stories on Mobile Devices  

E-Print Network [OSTI]

Mobile Collaboration: Collaboratively Reading and Creating Children's Stories on Mobile Devices 20742 allisond@umiacs.umd.edu, mona@cs.umd.edu ABSTRACT This paper discusses design iterations of Mobile Stories ­ a mobile technology that empowers children to collaboratively read and create stories. We

Golbeck, Jennifer

69

PHYSICAL REVIEW E 84, 016213 (2011) Isochronal chaos synchronization of delay-coupled optoelectronic oscillators  

E-Print Network [OSTI]

-coupled optoelectronic oscillators Lucas Illing,* Cristian D. Panda, and Lauren Shareshian Department of Physics, Reed; published 19 July 2011) We study experimentally chaos synchronization of nonlinear optoelectronic true for optical and optoelectronic devices that operate at technologically relevant radio frequen

Illing, Lucas

70

16:332:468:04 Capstone Design -Optoelectronics Spring 2011  

E-Print Network [OSTI]

16:332:468:04 Capstone Design - Optoelectronics Spring 2011 Instructor: Dr. Wei Jiang Time: (732) 445-2164 Prerequisites: 332:382 Electromagnetic Fields and 332:466 Optoelectronic Devices. Course Description: Students will design and implement an optoelectronic device or system. Four steps: (1) Design; (2

Jiang, Wei

71

Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference  

DOE Patents [OSTI]

An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies are disclosed. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100`s THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 {micro}m to 1.66 {micro}m for fiber optics can be accomplished with a nearly continuous frequency coverage. 7 figs.

Georgiades, N.P.; Polzik, E.S.; Kimble, H.J.

1999-02-02T23:59:59.000Z

72

Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference  

DOE Patents [OSTI]

An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100's THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 .mu.m to 1.66 .mu.m for fiber optics can be accomplished with a nearly continuous frequency coverage.

Georgiades, Nikos P. (Pasadena, CA); Polzik, Eugene S. (H.o slashed.jbjerg, DK); Kimble, H. Jeff (LaCanada, CA)

1999-02-02T23:59:59.000Z

73

Indirect excitons in GaAs coupled quantum wells : development of optoelectronic logic devices and trapping potentials, and studies of low temperature phenomena in a bosonic condensed matter system  

E-Print Network [OSTI]

the develop- ment of optoelectronics but also in the studiesof exciton based optoelectronics, that of scalability, willin exciton-based optoelectronics have been made. This

High, Alexander Arthur; High, Alexander Arthur

2012-01-01T23:59:59.000Z

74

Photo-carrier radiometry of semiconductors: A novel powerful optoelectronic diffusion-wave technique for silicon process  

E-Print Network [OSTI]

Photo-carrier radiometry of semiconductors: A novel powerful optoelectronic diffusion-defect PCR images thus obtained prove that very-near-surface (where optoelectronic device fabrication takes

Mandelis, Andreas

75

High density Integrated Optoelectronic Circuits for High Speed Photonic Microsystems  

E-Print Network [OSTI]

High density Integrated Optoelectronic Circuits for High Speed Photonic Microsystems K. Minoglou.minoglou@imel.demorkitos.gr Abstract. The study of high density integrated optoelectronic circuits involves the development of hybrid integration technologies and the generation of models for the optoelectronic devices. To meet these goals

Kouroupetroglou, Georgios

76

Enhancing the Electrical and Optoelectronic Performance of Nanobelt  

E-Print Network [OSTI]

Enhancing the Electrical and Optoelectronic Performance of Nanobelt Devices by Molecular Surface) with a thin self-assembled molecular layer, the electrical and optoelectronic performances of a single NB-assembled thin molecular layer on a surface for improving the electrical and optoelectronic performances of NWs

Wang, Zhong L.

77

Graphenesilicon optoelectronics AUGUST 2012 VOL 6 NO 8  

E-Print Network [OSTI]

Graphene­silicon optoelectronics AUGUST 2012 VOL 6 NO 8 www.nature.com/naturephotonics X-RAY FREE;Regenerative oscillation and four-wave mixing in graphene optoelectronics T. Gu1 *, N. Petrone2 , J. F. Mc consecutive first observations in graphene­ silicon hybrid optoelectronic devices--ultralow-power resonant

Hone, James

78

Regenerative oscillation and four-wave mixing in graphene optoelectronics  

E-Print Network [OSTI]

Regenerative oscillation and four-wave mixing in graphene optoelectronics T. Gu1 *, N. Petrone2 , J consecutive first observations in graphene­ silicon hybrid optoelectronic devices--ultralow-power resonant optoelectronics and all-optical signal processing. S ubwavelength nanostructures in monolithic material platforms

Hone, James

79

Scalable Optoelectronic ATM Networks: The iPOINT Fully Functional Testbed  

E-Print Network [OSTI]

Scalable Optoelectronic ATM Networks: The iPOINT Fully Functional Testbed J. W. Lockwood, H. Duan validates the design of a 128 Gb s optoelectronic ATM switch. Optoelectronics, rather than all optical that maximizes the utility of photonic, electronic, and optoelectronic devices while simultaneously satisfying

Lockwood, John W.

80

Nanotube Optoelectronic Memory Alexander Star,*, Yu Lu, Keith Bradley, and George Gru1ner  

E-Print Network [OSTI]

Nanotube Optoelectronic Memory Devices Alexander Star,*, Yu Lu, Keith Bradley, and George Gru1ner to fabricate an optoelectronic memory device. Electric charges are created upon optical illumination the fabrication and study of carbon nanotube optoelectronic memory devices. This functional assembly combines

Gruner, George

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Fig. 1: Schematic of the optoelectronic switch. Source/drain and channel regions formed in Si.  

E-Print Network [OSTI]

Si Ge E-field Fig. 1: Schematic of the optoelectronic switch. Source/drain and channel regions (z) energy Novel Si-based CMOS Optoelectronic Switching Device Operating in the Near Infrared Ali K, high performance optoelectronic switch is introduced. The device is a Si- MOSFET with Ge gate that can

Miller, David A. B.

82

16:332:591:01 Optoelectronics I Instructor: Dr. Wei Jiang  

E-Print Network [OSTI]

16:332:591:01 Optoelectronics I Fall 2010 Instructor: Dr. Wei Jiang Time: T.Th 6:40pm-8:00pm Bhattacharya, Semiconductor Optoelectronic Devices, Prentice Hall; 2nd edition (1996), ISBN 0134956567. Amnon://www.ece.rutgers.edu/~wjiangnj Note: this course will be collocated with 14:332:466 Optoelectronic Devices #12;

Jiang, Wei

83

Correlating Microstructure and Optoelectronic Performance of Carbon-Based Nanomaterials  

E-Print Network [OSTI]

for these nanostructures, but despite the promise many carbon nanostructure-based optoelectronic devices fail to compete with their conventional counterparts. This is often due in large part to a non-optimized material or device microstructure. Factors...

Rochford, Caitlin

2012-08-31T23:59:59.000Z

84

Millimeter-wave InP HEMT Optoelectronic Mixers Chang-Soon Choi1  

E-Print Network [OSTI]

Millimeter-wave InP HEMT Optoelectronic Mixers Chang-Soon Choi1 , Hyo-Soon Kang1 , Dae-Hyun Kim2-741, Korea Abstract -- Device characteristics of millimeter-wave optoelectronic mixers based on InP HEMTs are investigated in detail. InP HEMT optoelectronic mixers simultaneously perform photodetection with high internal

Choi, Woo-Young

85

PUBLISHED ONLINE: 17 OCTOBER 2010 | DOI: 10.1038/NMAT2879 Waterproof AlInGaP optoelectronics on  

E-Print Network [OSTI]

InGaP optoelectronics on stretchable substrates with applications in biomedicine and robotics Rak-Hwan Kim1 , Dae opportunities for optoelectronic devices. A ll established forms of inorganic light-emitting diodes (LEDs restricting the ways in which these devices can be used. Research in organic optoelectronic materials

Rogers, John A.

86

Characteristics of InP HEMT Harmonic Optoelectronic Mixers and Their Application to 60GHz Radio-on-Fiber Systems  

E-Print Network [OSTI]

. #12;Characteristics of InP HEMT Harmonic Optoelectronic Mixers and Their Application to 60GHz device characteristics of InP HEMT as a harmonic optoelectronic mixer. A single InP HEMT device performs is successfully demonstrated using InP HEMT harmonic optoelectronic mixer. Index Terms -- millimeter-wave, radio

Choi, Woo-Young

87

Approved Module Information for EE3OEL, 2014/5 Module Title/Name: Optoelectronics Module Code: EE3OEL  

E-Print Network [OSTI]

Approved Module Information for EE3OEL, 2014/5 Module Title/Name: Optoelectronics Module Code: EE3: * To provide a broad overview of updated optoelectronic principles, devices and applications. The students optoelectronic devices and their important functions for applications in optical communication, signal processing

Neirotti, Juan Pablo

88

English language learners' reading self-efficacy and achievement using 1:1 mobile learning devices  

E-Print Network [OSTI]

the singular user of the personal device, or it can be co-mobile learning devices are personal digital assistants (of mobile devices including tablet personal computers,

Walters, Jennifer L.

2012-01-01T23:59:59.000Z

89

Design and synthesis of nanocrystal heterostructures for optoelectronic applications  

E-Print Network [OSTI]

Colloidal semiconductor nanocrystals can be used for a variety of optoelectronic applications including light emitting devices (LEDs) and photovoltaics. Their narrow emission spectra make them excellent fluorophors for use ...

Halpert, Jonathan E

2008-01-01T23:59:59.000Z

90

Marcel Filoche Seminar: Modeling and Designing Micro-Optoelectronic...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Marcel Filoche Seminar: Modeling and Designing Micro-Optoelectronic Devices in the Real World: The Role of Disorder Apr 15, 2014 | 4:00 PM - 5:00 PM Marcel Filoche Researcher at...

91

Nano-Optoelectronic Integration on Silicon  

E-Print Network [OSTI]

implementing practical optoelectronics beyond the researchthat the future of nano-optoelectronics is more than just anthe possibility of using optoelectronics for retinal

Chen, Roger

2012-01-01T23:59:59.000Z

92

Metallic nanostructures for optoelectronic and photovoltaic applications  

E-Print Network [OSTI]

in photonics, optoelectronics and energy conversion. In thisrise to the fields of optoelectronics and photonics. Thelead to applications in optoelectronics, optics and energy

Lim, Swee Hoe

2009-01-01T23:59:59.000Z

93

Thin Film Coolers for Localized Temperature Control in Optoelectronic Integrated Circuits Yan Zhang. James Cliristofferson, Danoosh Vaslkiee. Phuong Nguyen. Ali Shakouri  

E-Print Network [OSTI]

Thin Film Coolers for Localized Temperature Control in Optoelectronic Integrated Circuits Yan Zhang-sensitive properties of optoelectronic are constraints for high frequency high power operation. and for high level, optoelectronic. transient, integration Introduction 1. Thermal Issue in Optoelectronic Devices The on

94

Organic photosensitive devices  

DOE Patents [OSTI]

The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photosensitive optoelectronic devices having a photoactive organic region containing encapsulated nanoparticles that exhibit plasmon resonances. An enhancement of the incident optical field is achieved via surface plasmon polariton resonances. This enhancement increases the absorption of incident light, leading to a more efficient device.

Rand, Barry P; Forrest, Stephen R

2013-11-26T23:59:59.000Z

95

PHYSICAL REVIEW E 83, 026107 (2011) Scaling behavior of oscillations arising in delay-coupled optoelectronic oscillators  

E-Print Network [OSTI]

-coupled optoelectronic oscillators Lucas Illing,* Greg Hoth, Lauren Shareshian, and Christopher May Department of Physics-coupled nonlinear systems. Our experiment consists of two wide-band optoelectronic devices that are cross lasers with optical [6,7,14] and optoelectronic [8] coupling, fiber-ring lasers with optical coupling [12

Illing, Lucas

96

Optical scattering noise in high Q fiber ring resonators and its effect on optoelectronic oscillator phase noise  

E-Print Network [OSTI]

Optical scattering noise in high Q fiber ring resonators and its effect on optoelectronic is used as the frequency reference device in an optoelectronic oscillator (OEO), it has been found using optical delay lines and the optoelectronic oscillator (OEO) approach [1]. Although delay line

Paris-Sud XI, Université de

97

Device-independent quantum reading and noise-assisted quantum transmitters  

E-Print Network [OSTI]

In quantum reading, a quantum state of light (transmitter) is applied to read classical information. In the presence of noise or for sufficiently weak signals, quantum reading can outperform classical reading by enhanced state distinguishability. Here we show that the enhanced quantum efficiency depends on the presence in the transmitter of a particular type of quantum correlations, the discord of response. Different encodings and transmitters give rise to different levels of efficiency. Considering noisy quantum probes we show that squeezed thermal transmitters with non-symmetrically distributed noise among the field modes yield a higher quantum efficiency compared to coherent thermal quantum states. The noise-enhanced quantum advantage is a consequence of the discord of response being a non-decreasing function of increasing thermal noise under constant squeezing, a behavior that leads to an increased state distinguishability. We finally show that, for non-symmetric squeezed thermal states, the probability of error, as measured by the quantum Chernoff bound, vanishes asymptotically with increasing local thermal noise at finite global squeezing. Therefore, at fixed finite squeezing, noisy but strongly discordant quantum states with large noise imbalance between the field modes can outperform noisy classical resources as well as pure entangled transmitters with the same finite level of squeezing.

Wojciech Roga; Daniela Buono; Fabrizio Illuminati

2014-12-22T23:59:59.000Z

98

DeviceRequirementsforOptical Interconnects to Silicon Chips  

E-Print Network [OSTI]

-low-energy optoelectronic devices and novel compact optics will be needed. By David A. B. Miller, Fellow IEEE ABSTRACT | We some conclusions from these energy and density arguments for optoelectronic devices and systems. We

Miller, David A. B.

99

Modeling and fabrication of electrically tunable quantum dot intersubband devices  

E-Print Network [OSTI]

to their excel- lent electrical, optical, and mechanical properties.1 The progress on CNT optoelectronic devices and simulators have been developed to un- derstand the operation of CNT optoelectronic devices.8 It has been

Mohseni, Hooman

100

Iris Visoly-Fisher Molecular Optoelectronics  

E-Print Network [OSTI]

Iris Visoly-Fisher Molecular Optoelectronics Organic semiconductors are excellent candidates single molecules in order to develop better design criteria for photovoltaic energy conversion and opto-electronic

Vardi, Amichay

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Dynamic cell and microparticle control via optoelectronic tweezers  

E-Print Network [OSTI]

24]. In contrast, optoelectronics tweezers enable light-high-speed semiconductor optoelectronics, nanophotonics, and

2007-01-01T23:59:59.000Z

102

Conceptual design for an optoelectronic delay line J.P Fabre (1) , T Gys (1) , M. Primout(1) and L Van hamme(2)(*)  

E-Print Network [OSTI]

1019 Conceptual design for an optoelectronic delay line J.P Fabre (1) , T Gys (1) , M. Primout(1 and transmitted to subsequent optoelectronic devices for further processing. This small fraction is selected ( at 108 Hz ) optoelectronic images, our design requires an excellent time resolution within the delay

Paris-Sud XI, Université de

103

Optoelectronic Reservoir Computing  

E-Print Network [OSTI]

Reservoir computing is a recently introduced, highly efficient bio-inspired approach for processing time dependent data. The basic scheme of reservoir computing consists of a non linear recurrent dynamical system coupled to a single input layer and a single output layer. Within these constraints many implementations are possible. Here we report an opto-electronic implementation of reservoir computing based on a recently proposed architecture consisting of a single non linear node and a delay line. Our implementation is sufficiently fast for real time information processing. We illustrate its performance on tasks of practical importance such as nonlinear channel equalization and speech recognition, and obtain results comparable to state of the art digital implementations.

Yvan Paquot; Franois Duport; Anteo Smerieri; Joni Dambre; Benjamin Schrauwen; Marc Haelterman; Serge Massar

2011-11-30T23:59:59.000Z

104

Optoelectronic sensitization of carbon nanotubes by CdTe nanocrystals B. Zebli,1 H. A. Vieyra,1 I. Carmeli,2 A. Hartschuh,3 J. P. Kotthaus,1 and A. W. Holleitner1,4,*  

E-Print Network [OSTI]

Optoelectronic sensitization of carbon nanotubes by CdTe nanocrystals B. Zebli,1 H. A. Vieyra,1 I optoelectronic devices.1­6 The functionalization of CNTs by chemical modifications holds interesting prospects suitable for optoelectronic devices such as solar cells.18 Here, we dem- onstrate that the photoconductance

Ludwig-Maximilians-Universität, München

105

Title: Device Physics and Applications of Intersubband Transitions in Wide-Bandgap Nitride Semiconductors  

E-Print Network [OSTI]

interconnections are realized using integrated optoelectronic devices operating at wavelengths to which silicon silicon circuits. The thin film optoelectronic devices are bonded directly to the stacked layers. devices. These optoelectronic devices operate at wavelengths to which the silicon is transparent, thus

Van Veen, Barry D.

106

Fundamental Characteristics of Semiconductor Nanowires for Intersubband Optoelectronics  

E-Print Network [OSTI]

nanowires for intraband optoelectronics. First steps includefor Intersubband Optoelectronics A thesis submitted inNanowires for Intersubband Optoelectronics by Benjamin Adams

Burnett, Benjamin Adams

2012-01-01T23:59:59.000Z

107

Publish date: 06/27/2011 ECE 4314: Solid State Devices  

E-Print Network [OSTI]

the operation of MOSFETs. 5. Describe the fundamentals of optoelectronic devices. Student outcomes addressed: a Bipolar junction transistors­ 7 hours Field-effect transistors and IC ­ 12 hours Optoelectronic devices

Gelfond, Michael

108

Optoelectronic fiber interface design  

E-Print Network [OSTI]

Recent developments in materials science have led to the development of an exciting, new class of fibers which integrate metals, semiconductors and insulators in the same codrawing process. Various electrical devices have ...

Spencer, Matthew Edmund

2008-01-01T23:59:59.000Z

109

Spatially Resolved Optoelectronics in Lead Sulfide Nanowires Yiming Yang, Xingyue Peng, and Dong Yu  

E-Print Network [OSTI]

to the development and optimization of optoelectronic devices such as solar cells and photodetectors. Comparing solar energy devices and lasers. Therefore, it is 10.1149/05808.0087ecst ©The Electrochemical Society Synthesis and Device Fabrication PbS NWs were synthesized by a CVD method in a tube furnace. PbCl2 (99

Yu, Dong

110

Multimaterial rectifying device fibers  

E-Print Network [OSTI]

Electronic and optoelectronic device processing is commonly thought to be incompatible with much simpler thermal drawing techniques used in optical fiber production. The incorporation of metals, polymer insulators, and ...

Orf, Nicholas D

2009-01-01T23:59:59.000Z

111

Optoelectronics Lab #0 Saftey Laser Safety  

E-Print Network [OSTI]

Optoelectronics Lab #0 Saftey Laser Safety 7.0 Laser Hazard Analysis Before appropriate controls directly for an extended period (greater than 1000 seconds). Page 1 #12;Optoelectronics Lab #0 Saftey 3

Collins, Gary S.

112

16:332:592 Optoelectronics II Contemporary Topics in Optoelectronics/Photonics  

E-Print Network [OSTI]

16:332:592 Optoelectronics II Contemporary Topics in Optoelectronics/Photonics Spring 2008, and semiconductor physics or solid state electronics or optoelectronics I (please contact the instructor if you in optoelectronics and photonics. Three topics for this year: (1) Photonic crystals: basic physics, fabrication

Jiang, Wei

113

Center for Optoelectronics and Photonics PaderbornCenter for Optoelectronics and Photonics Paderborn GraduateGraduate ProgramProgram  

E-Print Network [OSTI]

Center for Optoelectronics and Photonics PaderbornCenter for Optoelectronics and Photonics in Optoelectronics and PhotonicsOptoelectronics and Photonics Waveguide-Coupled SiON-Microresonators(Project B3) Prof

Noé, Reinhold

114

Optoelectronics 514 Transmission Hologram Transmission Hologram  

E-Print Network [OSTI]

Optoelectronics 514 Transmission Hologram Transmission Hologram Purpose: To learn about making Procedure: 1. HeNe Laser: #12;Optoelectronics 514 Transmission Hologram Mount the laser along the long axis. Development #12;Optoelectronics 514 Transmission Hologram Put the plate in the developer emulsion side up

Collins, Gary S.

115

ANALYSIS AND IMPLEMENTATION OF OPTOELECTRONIC NETWORK ROUTERS  

E-Print Network [OSTI]

ANALYSIS AND IMPLEMENTATION OF OPTOELECTRONIC NETWORK ROUTERS By Mongkol Raksapatcharawong and around the U.S. for their constant support. #12;iv Abstract Network routers based on optoelectronic in multiprocessor systems. By combining high-bandwidth optoelectronic I/O technology and high- performance CMOS

Pinkston, Timothy M.

116

E-Print Network 3.0 - assist device e-type Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solid State Electronic Devices Course Mechanics Instructor: Prof. Seong... and optoelectronic devices. Topics include electrical properties of semiconductors, p-n junctions,...

117

E-Print Network 3.0 - assist device alvad Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solid State Electronic Devices Course Mechanics Instructor: Prof. Seong... and optoelectronic devices. Topics include electrical properties of semiconductors, p-n junctions,...

118

E-Print Network 3.0 - administration investigational device Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solid State Electronic Devices Course Mechanics Instructor: Prof. Seong... and optoelectronic devices. Topics include electrical properties of semiconductors, p-n ... Source:...

119

E-Print Network 3.0 - assist device support Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solid State Electronic Devices Course Mechanics Instructor: Prof. Seong... and optoelectronic devices. Topics include electrical properties of semiconductors, p-n junctions,...

120

E-Print Network 3.0 - act devices Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Solid State Electronic Devices Course Mechanics Instructor: Prof. Seong... and optoelectronic devices. Topics include electrical properties of semiconductors, p-n junctions,...

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Integrated NEMS and optoelectronics for sensor applications.  

SciTech Connect (OSTI)

This work utilized advanced engineering in several fields to find solutions to the challenges presented by the integration of MEMS/NEMS with optoelectronics to realize a compact sensor system, comprised of a microfabricated sensor, VCSEL, and photodiode. By utilizing microfabrication techniques in the realization of the MEMS/NEMS component, the VCSEL and the photodiode, the system would be small in size and require less power than a macro-sized component. The work focused on two technologies, accelerometers and microphones, leveraged from other LDRD programs. The first technology was the nano-g accelerometer using a nanophotonic motion detection system (67023). This accelerometer had measured sensitivity of approximately 10 nano-g. The Integrated NEMS and optoelectronics LDRD supported the nano-g accelerometer LDRD by providing advanced designs for the accelerometers, packaging, and a detection scheme to encapsulate the accelerometer, furthering the testing capabilities beyond bench-top tests. A fully packaged and tested die was never realized, but significant packaging issues were addressed and many resolved. The second technology supported by this work was the ultrasensitive directional microphone arrays for military operations in urban terrain and future combat systems (93518). This application utilized a diffraction-based sensing technique with different optical component placement and a different detection scheme from the nano-g accelerometer. The Integrated NEMS LDRD supported the microphone array LDRD by providing custom designs, VCSELs, and measurement techniques to accelerometers that were fabricated from the same operational principles as the microphones, but contain proof masses for acceleration transduction. These devices were packaged at the end of the work.

Czaplewski, David A.; Serkland, Darwin Keith; Olsson, Roy H., III; Bogart, Gregory R. (Symphony Acoustics, Rio Rancho, NM); Krishnamoorthy, Uma; Warren, Mial E.; Carr, Dustin Wade (Symphony Acoustics, Rio Rancho, NM); Okandan, Murat; Peterson, Kenneth Allen

2008-01-01T23:59:59.000Z

122

Metallic nanostructures for optoelectronic and photovoltaic applications  

E-Print Network [OSTI]

enhanced performance of photovoltaic and photodetector Proc.and H. Wagner, in Photovoltaic Specialists Conference. ,for Optoelectronic and Photovoltaic Applications by Swee Hoe

Lim, Swee Hoe

2009-01-01T23:59:59.000Z

123

APPLIED PHYSICS REVIEWS Semi-insulating semiconductor heterostructures: Optoelectronic  

E-Print Network [OSTI]

APPLIED PHYSICS REVIEWS Semi-insulating semiconductor heterostructures: Optoelectronic properties of optoelectronic properties of and uses for semi-insulating semiconductor heterostructures and thin films. The principal optical and optoelectronic properties of semi-insulating epilayers and heterostructures

Nolte, David D.

124

Optoelectronic switches based on diffusive conduction Hilmi Volkan Demira  

E-Print Network [OSTI]

Optoelectronic switches based on diffusive conduction Hilmi Volkan Demira and Fatih Hakan Koklu the process of diffusive conduction that we use in our optoelectronic switches to achieve rapid optical. We demonstrate the feasibility of using such diffusive conductive optoelectronic switches

Miller, David A. B.

125

Stochastic artificial retinas: algorithm, optoelectronic circuits, and implementation  

E-Print Network [OSTI]

Stochastic artificial retinas: algorithm, optoelectronic circuits, and implementation Philippe tasks in the presence of discontinuities, dedicated optoelectronic hardware to implement thermal motion by photodetection of speckles, and hybrid architectures that combine optoelectronic, asynchronous

Boyer, Edmond

126

Tuning Electrical and Optoelectronic Properties of Single Cadmium Telluride Nanoribbon  

E-Print Network [OSTI]

Tuning Electrical and Optoelectronic Properties of Single Cadmium Telluride Nanoribbon Maxwell C.e., electrical resistivity and field-effect transistor (FET) mobility) and optoelectronic property (photocurrent, and magnetic properties with potential application in nanoscale electronic, optoelectronic, spintronics

Chen, Wilfred

127

Title of dissertation: SYNCHRONIZATION OF CHAOTIC OPTOELECTRONIC OSCILLATORS  

E-Print Network [OSTI]

ABSTRACT Title of dissertation: SYNCHRONIZATION OF CHAOTIC OPTOELECTRONIC OSCILLATORS: ADAPTIVE channels. Here, using a fiber-optic network of chaotic optoelectronic oscillators, we experimentally on synchronization. Through measurements of the convergence rate to synchronization in networks of optoelectronic

Anlage, Steven

128

MTL ANNUAL RESEARCH REPORT 2014 Photonics 99 Photonics, Optoelectronics  

E-Print Network [OSTI]

MTL ANNUAL RESEARCH REPORT 2014 Photonics 99 Photonics, Optoelectronics Generating Optical Orbital................................................................................................................................................118 Optoelectronics Based on Monolayer WSe2 p-n Diodes

Reif, Rafael

129

A study of InP nanowires : growth, material properties, and application in optoelectronics  

E-Print Network [OSTI]

and Application in Optoelectronics A dissertation submittedand Application in Optoelectronics by Clint Joseph Novotny

Novotny, Clint Joseph

2007-01-01T23:59:59.000Z

130

Opto-Electronics in Large Array Gas Detector Systems  

E-Print Network [OSTI]

Large array gas detector systems are used in particle and nuclear physics experiments involving high-energy nucleon-nucleon and heavy-ion collisions. We have observed that in large array gas detector systems the momentary discharges inside the detector cells result in slowdown of High Voltage conditioning and possible hindrances in signal processing. We have explored the opto-electronic devices like the opto-coupler, optical fibre and signal processing circuit, which provide successful monitoring procedures and preventive measures to overcome the challenges produced in such complex detector systems.

Majumdar, M R D; Nayak, T K; Das, Debasish; Nayak, Tapan K.

2005-01-01T23:59:59.000Z

131

Optoelectronic Multi-Chip Module Demonstrator System Jason D. Bakos  

E-Print Network [OSTI]

Optoelectronic Multi-Chip Module Demonstrator System Jason D. Bakos Department of Computer Science of Pittsburgh don@ee.pitt.edu Abstract Much research has been conducted in the area of optoelectronic optoelectronic chip-to-chip interconnection, or "optoelectronic multi-chip modules" (OE-MCM's). Most current

Bakos, Jason D.

132

Optoelectronic fiber webs for imaging applications  

E-Print Network [OSTI]

We demonstrate the use of novel visible and infrared light-sensitive optoelectronic fiber in the development of large scale photodector arrays. Unlike conventional point photodetectors these one-dimensional linear photodectors ...

Arnold, Jerimy Reeves

2005-01-01T23:59:59.000Z

133

Organic LEDs for optoelectronic neural networks  

E-Print Network [OSTI]

In this thesis, I investigate the characteristics of Organic Light Emitting Diodes (OLEDs) and assess their suitability for use in the Compact Optoelectronic Integrated Neural (COIN) coprocessor. The COIN coprocessor, a ...

Mars, Risha R

2012-01-01T23:59:59.000Z

134

A single power supply optoelectronic differential amplifier  

E-Print Network [OSTI]

A SINGLE POWER SUPPLY OPTOELECTRONIC DIFFERENTIAL AMPLIFIER A Thesis by YOUNGiXIIN ALBERT CHOI Submitted to the Graduate College of Texas A&M University in partial fulfillment of the requirement for the degree of MASTER OF SCIENCE December... 1987 Major Subject: Electrical Engineering A SINGLE POWER SUPPLY OPTOELECTRONIC DIFFERENTIAL AMPLIFIER A Thesis by YOUNGMIN ALBERT CHOI Approved a. s to style and content by: He y F. aylor (Chairman of Committee) Kai Chang (Member) Ohannes...

Choi, Youngmin Albert

1987-01-01T23:59:59.000Z

135

Transparent heat-spreader for optoelectronic applications  

DOE Patents [OSTI]

An optoelectronic cooling system is equally applicable to an LED collimator or a photovoltaic solar concentrator. A transparent fluid conveys heat from the optoelectronic chip to a hollow cover over the system aperture. The cooling system can keep a solar concentrator chip at the same temperature as found for a one-sun flat-plate solar cell. Natural convection or forced circulation can operate to convey heat from the chip to the cover.

Minano, Juan Carlos; Benitez, Pablo

2014-11-04T23:59:59.000Z

136

Schematic Design of a Hybrid STM/SNOM forSchematic Design of a Hybrid STM/SNOM for Spintronics & OptoelectronicsSpintronics & Optoelectronics the Interiorthe Interior  

E-Print Network [OSTI]

& OptoelectronicsSpintronics & Optoelectronics ­­ the Interiorthe Interior The z-stage of the STM head w

Yeh, Nai-Chang

137

Carbon Based Nano-Materials Research, Development and Applications in Optoelectronics  

E-Print Network [OSTI]

Nanotube Photonics and Optoelectronics. Nature Photonics 2,Nanotube Photonics and Optoelectronics. Nature Photonics 2,Nanotube Photonics and Optoelectronics. Nature Photonics 2,

Wang, Feihu

2012-01-01T23:59:59.000Z

138

Two-dimensional materials as a new platform for atomically thin electronics and optoelectronics  

E-Print Network [OSTI]

M. S. Electronics and optoelectronics of two-dimensionalGraphene photonics and optoelectronics. Nat. Photon. 4, 611M. S. Electronics and optoelectronics of two-dimensional

Cheng, Rui

2014-01-01T23:59:59.000Z

139

A Tunable Hemispherical Platform for Non-Stretching Curved Flexible Electronics and Optoelectronics  

E-Print Network [OSTI]

Flexible Electronics and Optoelectronics Jinda Zhuang and Y.flexible electronics or optoelectronics on curved surfacesflexible electronics and optoelectronics for a wide variety

Ju, Y. Sungtaek

2014-01-01T23:59:59.000Z

140

E-Print Network 3.0 - advanced photonic devices Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to flourish in the areas of high speed, high performance electronics and optoelectronic devices Source: Akhmedov, Azer - Department of Mathematics, University of...

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

E-Print Network 3.0 - advanced cmos devices Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: . Paniccia, "Advances in silicon photonic devices for silicon-based optoelectronic applications," Physica E... . Paniccia, "Development of CMOS-compatible integrated...

142

E-Print Network 3.0 - advanced device structures Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering 5 ECE 308 -Spring 2005 Physics and Models of Electronics and Optoelectronics Devices (3) Summary: ECE 308 - Spring 2005 Physics and Models of Electronics and...

143

E-Print Network 3.0 - assistive technology devices Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Computer Engineering (ECE) at Lehigh... bandgap III-Nitride semiconductor optoelectronics materials and devices. The position is available Source: Gilchrist, James F. -...

144

E-Print Network 3.0 - amplatz thrombectomy device Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Division Collection: Materials Science 86 Research Staff Openings in Organic Optoelectronic Devices Contact Person: Dr. Wallace C.H. Choy, Department of Electrical and Electronic...

145

ECE 572 Optoelectronics Instructor: A.P. DeFonzo  

E-Print Network [OSTI]

ECE 572 Optoelectronics Fall 2011 Instructor: A.P. DeFonzo Text: The Physics of Solar Cells: Mon-Wed 10 -11 Rm 121 Marston Place: Eng. Lab rm 327 Description: Optoelectronics from the perspective

Massachusetts at Amherst, University of

146

Fundamental building blocks for a compact optoelectronic neural network processor  

E-Print Network [OSTI]

The focus of this thesis is interconnects within the Compact Optoelectronic Neural Network Processor. The goal of the Compact Optoelectronic Neural Network Processor Project (CONNPP) is to build a small, rugged neural ...

Ruedlinger, Benjamin Franklin, 1976-

2003-01-01T23:59:59.000Z

147

Communication using Synchronization of Chaos in Semiconductor Lasers with optoelectronic  

E-Print Network [OSTI]

Communication using Synchronization of Chaos in Semiconductor Lasers with optoelectronic feedback S. The Chaos in the single-mode semiconductor lasers is generated by means of an optoelectronic feedback with optoelectronic feedback has been demonstrated for quite slow data rates by using chaotic wavelength fluctuations

Illing, Lucas

148

Multistability in a semiconductor laser with optoelectronic feedback  

E-Print Network [OSTI]

Multistability in a semiconductor laser with optoelectronic feedback Guang-Qiong Xia1,2 , Sze with delayed optoelectronic feedback is observed experimentally. For a given delay time, the observed dynamical-oscillating semiconductor lasers subject to delayed optoelectronic mutual coupling," Phys. Rev. E 73, 047201-1-4 (2006) 8. G

Chan, Sze-Chun

149

Title of dissertation: OPTOELECTRONIC EXPERIMENTS ON RANDOM BIT GENERATORS AND  

E-Print Network [OSTI]

ABSTRACT Title of dissertation: OPTOELECTRONIC EXPERIMENTS ON RANDOM BIT GENERATORS AND COUPLED: Professor Rajarshi Roy Department of Physics Optoelectronic systems have many important applications and optoelectronic systems have been of interest for two newer purposes: generators of random bits and experimental

Murphy, Thomas E.

150

Models and Algorithms for Optical and Optoelectronic Parallel Computers  

E-Print Network [OSTI]

Models and Algorithms for Optical and Optoelectronic Parallel Computers Sartaj Sahni Dept/Fremantle, Australia #12;realization leads to the concept of optoelectronic computers­computers which have a mix the prespective of efficient algorithm design. The OTIS family of optoelectronic computers is a step

Sahni, Sartaj K.

151

Noise properties of mutually sustained microwave-optoelectronic oscillator pair  

E-Print Network [OSTI]

Noise properties of mutually sustained microwave-optoelectronic oscillator pair E. Shumakher and G microwave-optoelectronic oscillator pair are described. The two oscillators have different spectral purities and exhibits low phase noise and highly suppressed spurious modes. Optoelectronic oscillators are employed

Eisenstein, Gadi

152

Absolute shape measurements using high-resolution optoelectronic holography methods  

E-Print Network [OSTI]

Absolute shape measurements using high- resolution optoelectronic holography methods Cosme Furlong optoelectronic holography (OEH) methodology is described. This description addresses apparatus and analysis-Optical Instrumentation Engineers. [S0091-3286(00)02601-5] Subject terms: CAD/CAE models; fiber optics; optoelectronic

Furlong, Cosme

153

Time-domain Dynamics and Stability Analysis of Optoelectronic Oscillators  

E-Print Network [OSTI]

Time-domain Dynamics and Stability Analysis of Optoelectronic Oscillators based on Whispering and Yanne K. Chembo Optoelectronic oscillators (OEOs) are microwave photonics systems in- tended to generate in "" #12;1 Introduction The optoelectronic oscillator (OEO) is nowadays considered as one of the most

Paris-Sud XI, Université de

154

Multicriteria Choice of the NVG Optoelectronic Channel Elements Daniela Borissova  

E-Print Network [OSTI]

6 1 Multicriteria Choice of the NVG Optoelectronic Channel Elements Daniela Borissova Institute of technological development and mass production. The process of the NVG design involves choice of optoelectronic elements must fulfill specific requirements of the NVG optoelectronic channel and it has to meet user

Borissova, Daniela

155

Spatially Resolved Ballistic Optoelectronic Transport Measured by Quantized  

E-Print Network [OSTI]

Spatially Resolved Ballistic Optoelectronic Transport Measured by Quantized Photocurrent of the electron modes in the QPC. KEYWORDS Ballistic optoelectronic quantum transport, nanoscale electronics Q to hundreds of nanometers have been detected. We find that a ballistic optoelectronic trans- port can occur

Ludwig-Maximilians-Universität, München

156

OPTI 626-Integrated Optics and Optoelectronics Course Description  

E-Print Network [OSTI]

OPTI 626- Integrated Optics and Optoelectronics Course Description: This course aims to give a broad understanding of the physics and technology of discrete and integrated optical and optoelectronic componenents. The main focus is on important optoelectronic components such as waveguides, lasers, detectors

Arizona, University of

157

Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications  

E-Print Network [OSTI]

Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications with material composition over a range of 0.7 to 5 eV. This factor allows them to be used for optoelectronic. Improvement in growth quality and doping of GaN is needed to improve the performance of optoelectronics

Li, Mo

158

Optoelectronic cooling of mechanical modes in a semiconductor nanomembrane  

E-Print Network [OSTI]

Optical cavity cooling of mechanical resonators has recently become a research frontier. The cooling has been realized with a metal-coated silicon microlever via photo-thermal force and subsequently with dielectric objects via radiation pressure. Here we report cavity cooling with a crystalline semiconductor membrane via a new mechanism, in which the cooling force arises from the interaction between the photo-induced electron-hole pairs and the mechanical modes through the deformation potential coupling. The optoelectronic mechanism is so efficient as to cool a mode down to 4 K from room temperature with just 50 uW of light and a cavity with a finesse of 10 consisting of a standard mirror and the sub-wavelength-thick semiconductor membrane itself. The laser-cooled narrow-band phonon bath realized with semiconductor mechanical resonators may open up a new avenue for photonics and spintronics devices.

K. Usami; A. Naesby; T. Bagci; B. Melholt Nielsen; J. Liu; S. Stobbe; P. Lodahl; E. S. Polzik

2010-11-22T23:59:59.000Z

159

DNA Guided Self-Assembly of Nanocrystals for Optoelectronic Devices /  

E-Print Network [OSTI]

3D nanocrystal superlattices 68 4.1 Introduction 68 4.2 Materials and Methods .68 4.2.1 Dual subtraction printing ..

Noh, Hyunwoo

2013-01-01T23:59:59.000Z

160

Marcel Filoche Seminar: Modeling and Designing Micro-Optoelectronic Devices  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces andMapping the Nanoscale Landscape Print For the firstMaps SignMarc Morialin

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Optoelectronic switching of addressable molecular crossbar junctions  

E-Print Network [OSTI]

This letter reports on the observation of optoelectronic switching in addressable molecular crossbar junctions fabricated using polymer stamp-printing method. The active medium in the junction is a molecular self-assembled monolayer softly sandwiched between gold electrodes. The molecular junctions are investigated through currentvoltage measurements at varied temperature (from 95 to 300 K) in high vacuum condition. The junctions show reversible optoelectronic switching with the highest on/off ratio of 3 orders of magnitude at 95 K. The switching behavior is independent of both optical wavelength and molecular structure, while it strongly depends on the temperature. Initial analysis indicates that the distinct binding nature of the molecule/electrode interfaces play a dominant role in the switching performance.

J. C. Li

2006-11-22T23:59:59.000Z

162

332:466/591 Optoelectronics I Instructor: Wei Jiang  

E-Print Network [OSTI]

332:466/591 Optoelectronics I Instructor: Wei Jiang Sec. 1. Introduction #12;2 332:591 Optoelectronics I (W. Jiang) About Instructor · Dr. Wei Jiang · Room: EE 215 · Phone: (732) 445-2164 · Email: wjiangnj@rci.rutgers.edu #12;3 332:591 Optoelectronics I (W. Jiang) About this Course · Class Time: T,Th 6

Jiang, Wei

163

Assembly of opto-electronic module with improved heat sink  

DOE Patents [OSTI]

A heat sink for a transceiver optoelectronic module including dual direct heat paths and a structure which encloses a number of chips having a central web which electrically isolates transmitter and receiver chips from each other. A retainer for an optical coupler having a port into which epoxy is poured. An overmolded base for an optoelectronic module having epoxy flow controller members built thereon. Assembly methods for an optoelectronic module including gap setting and variation of a TAB bonding process.

Chan, Benson (Vestal, NY); Fortier, Paul Francis (Richelieu, CA); Freitag, Ladd William (Rochester, MN); Galli, Gary T. (Binghampton, NY); Guindon, Francois (Stukely-sud, CA); Johnson, Glen Walden (Yorktown Heights, NY); Letourneau, Martial (Granby, CA); Sherman, John H. (Lisle, NY); Tetreault, Real (Granby, CA)

2004-11-23T23:59:59.000Z

164

Multiplex Chaos Synchronization in Semiconductor Lasers with Multiple Optoelectronic Feedbacks  

E-Print Network [OSTI]

Secure chaos based multiplex communication system scheme is proposed utilizing globally coupled semiconductor lasers with multiple variable time delay optoelectronic feedbacks.

E. M. Shahverdiev; K. A. Shore

2011-11-06T23:59:59.000Z

165

TacRead, or Tactile Readout Device, is a novel and affordable refreshable braille display. People with blindness perceive braille alphabets formed by  

E-Print Network [OSTI]

Read. It has been identified as a potential solution to the low-cost Braille display challenge modules have been developed, prototyped and tested. Efforts for fabrication of displays for large not only motivated and driven the process, but kept it pointed towards the right direction as well. About

Banerjee, Subhashis

166

ACTIVE SUBSTRATES FOR OPTOELECTRONIC INTERCONNECT Donald Chiarulli, Steven Levitan, Jason Bakos  

E-Print Network [OSTI]

ACTIVE SUBSTRATES FOR OPTOELECTRONIC INTERCONNECT Donald Chiarulli, Steven Levitan, Jason Bakos Semiconductor ABSTRACT We present the design of an intelligent optoelectronic chip carrier (IOCC the sapphire. The result is an optoelectronic package that supports full CMOS performance, is mechanically

Bakos, Jason D.

167

Dedicated optoelectronic stochastic parallel processor for real-time image processing: motion-detection  

E-Print Network [OSTI]

Dedicated optoelectronic stochastic parallel processor for real-time image processing: motion and performance analysis of a dedicated optoelectronic processor that implements stochastic optimization, providing compact, high-bandwidth intrachip optoelectronic interconnects. We have modeled the oper- ation

Paris-Sud XI, Université de

168

The WARRP Core: Optoelectronic Implementation of Network Router Deadlock Handling Mechanisms  

E-Print Network [OSTI]

1 The WARRP Core: Optoelectronic Implementation of Network Router Deadlock Handling Mechanisms. Keywords: adaptive routing, deadlock handling, multiprocessor network router, optoelectronic smart pixel. #12;2 1. Introduction Emerging optoelectronic smart-pixel technology is of increasing interest

Pinkston, Timothy M.

169

A High-Performance Optoelectronic Interconnect Router: Using Increased Bandwidth to Enable Latency Reduction  

E-Print Network [OSTI]

D R A FT 1 A High-Performance Optoelectronic Interconnect Router: Using Increased Bandwidth optoelectronic interconnection network router capable of supplying and efficiently utilizing higher bandwidth routing, interconnection network, latency hiding/reduction techniques, optoelectronic router. 1

Pinkston, Timothy M.

170

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Urbana, IL); Lee, Keon Jae (Savoy, IL); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Champaign, IL); Zhu, Zhengtao (Urbana, IL)

2009-11-24T23:59:59.000Z

171

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2013-05-14T23:59:59.000Z

172

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2014-03-04T23:59:59.000Z

173

Methods and devices for fabricating and assembling printable semiconductor elements  

DOE Patents [OSTI]

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G. (Champaign, IL); Rogers, John A. (Champaign, IL); Menard, Etienne (Durham, NC); Lee, Keon Jae (Daejeon, KR); Khang, Dahl-Young (Urbana, IL); Sun, Yugang (Champaign, IL); Meitl, Matthew (Raleigh, NC); Zhu, Zhengtao (Urbana, IL)

2011-07-19T23:59:59.000Z

174

Release strategies for making transferable semiconductor structures, devices and device components  

DOE Patents [OSTI]

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

2014-11-25T23:59:59.000Z

175

Release strategies for making transferable semiconductor structures, devices and device components  

DOE Patents [OSTI]

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Rogers, John A. (Champaign, IL); Nuzzo, Ralph G. (Champaign, IL); Meitl, Matthew (Raleigh, NC); Ko, Heung Cho (Urbana, IL); Yoon, Jongseung (Urbana, IL); Menard, Etienne (Durham, NC); Baca, Alfred J. (Urbana, IL)

2011-04-26T23:59:59.000Z

176

CMOS/BiCMOS Optoelectronic Receiver High-Speed Circuits and Systems Lab 1  

E-Print Network [OSTI]

CMOS/BiCMOS Optoelectronic Receiver High-Speed Circuits and Systems Lab 1 Silicon-based optoelectronic Rx for optical interconnect applications Process Standard CMOS 0.13-m technology Data Up to 10-Gb Optoelectronic Receiver SiGe BiCMOS Optoelectronic Receiver Process Standard BiCMOS 0.25-m technology Data Up

Choi, Woo-Young

177

Fabrication, Device Assembly, and Application of One-Dimensional Chalcogenides Nanostructures  

E-Print Network [OSTI]

membranes. Journal of Optoelectronics and Advanced Materialsnanoscale electronics, optoelectronics, photovoltaics, andin electronics, optoelectronics, photovoltaics, and sensors

Kum, Maxwell C.

2009-01-01T23:59:59.000Z

178

Optoelectronic and photonic control of single quantum dots  

E-Print Network [OSTI]

Optoelectronic and photonic control of single quantum dots Samuel James Dewhurst Wolfson College University of Cambridge A thesis submitted for the degree of Doctor of Philosophy April 2010 Declaration This thesis describes work carried out...

Dewhurst, Samuel James

2010-10-12T23:59:59.000Z

179

Micro-cleaved ridge lasers for optoelectronic integration on silicon  

E-Print Network [OSTI]

This thesis addresses one of the last hurdles to optoelectronic integration on silicon, namely the incorporation of room-temperature, electrically-pumped edge-emitting laser diodes. To this end, thin (-6 pm) InP-based ...

Rumpler, Joseph John, 1976-

2008-01-01T23:59:59.000Z

180

Metal oxide/organic interface investigations for photovoltaic devices  

E-Print Network [OSTI]

summarises work I have carried out as a PhD student of the Optoelectronics Group at Cavendish Laboratory of the University of Cambridge since October 2010. I am thankful to the Engineering and Physical Sciences Research Council and the A.G. Leventis... are often used in many other optoelectronic devices such as photovoltaics and light emitting diodes. Sufficiently conducting oxides with the appropriate electron affinities and ionisation potentials, can be employed as charge transport and injection layers...

Pachoumi, Olympia

2014-10-07T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

E-Print Network 3.0 - atmospheric rf device Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

rf device Page: << < 1 2 3 4 5 > >> 1 Packaging of Ka-Band Patch Antenna and Optoelectronic Components for Dual-Mode Indoor Wireless Communication Summary: that the coupling...

182

E-Print Network 3.0 - azimuthally symmetric devices Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

have been motivated by a broad range of potential applications which include optoelectronic devices... in Fig. 2. We dene the azimuthal orientation of the 2D unit cell by the...

183

Physics and simulation of transport processes in hybrid organic semiconductor devices  

E-Print Network [OSTI]

Organic semiconductors and nanomaterials promise to potentially form the basis for future efficient and cost-effective large area optoelectronic devices, such as lightemitting diodes and solar cells. Although these materials' ...

Rousseau, Ian Michael

2010-01-01T23:59:59.000Z

184

Measurement and control of exciton spin in organic light emitting devices  

E-Print Network [OSTI]

Organic semiconductors are a promising new material set for electronic and optoelectronic devices. Their properties can be precisely controlled through chemistry, and they are well-suited for large-area, flexible, and ...

Segal, Michael, Ph. D. Massachusetts Institute of Technology

2007-01-01T23:59:59.000Z

185

Fabrication and optimization of light emitting devices with core-shell quantum dots  

E-Print Network [OSTI]

Quantum dot light emitting devices (QD-LEDs) are promising options for the next generation of solid state lighting, color displays, and other optoelectronic applications. Overcoating quantum dots (QDs) -- semiconducting ...

Song, Katherine Wei

2013-01-01T23:59:59.000Z

186

Alexander A. Balandin Nano-Device Laboratory  

E-Print Network [OSTI]

Bell Tower City of Riverside UCR Botanic Gardens Joshua Tree Park, California UCR Engineering Building Devices and Circuits Optoelectronics Direct Energy Conversion Bio- Nanotech Thermal and Electrical kinetic energy of the hot photo-generated carriers and energy loss of photons which are less than

187

188 IEEE TRANSACTIONS ON ULTRASONICS,FERROELECTRICS,AND FREQUENCYCONTROL. VOL. 42, NO. 2. MARCH 1995 Optoelectronic Transmitters for  

E-Print Network [OSTI]

1995 Optoelectronic Transmitters for Medical Ultrasound Transducers Charles D. Emery, Member, IEEE Abstract- Optoelectronics and fiber optics can be used to miniaturize and improve the flexibility the feasibility of applying optoelectronic technology to replace conventional electronic transmitter technology. I

Smith, Stephen

188

Journal of Microwaves and Optoelectronics, Vol. 2, N.o 6, December 2002.  

E-Print Network [OSTI]

Journal of Microwaves and Optoelectronics, Vol. 2, N.o 6, December 2002. Copyright SBMO ISSN 1516 one metric is not #12;Journal of Microwaves and Optoelectronics, Vol. 2, N.o 6, December 2002

Coello, Carlos A. Coello

189

Journal of Microwaves and Optoelectronics, Vol. 2, N.o 6, December 2002.  

E-Print Network [OSTI]

Journal of Microwaves and Optoelectronics, Vol. 2, N.o 6, December 2002. Copyright SBMO ISSN 1516 investigation is subsequently #12;Journal of Microwaves and Optoelectronics, Vol. 2, N.o 6, December 2002

Coello, Carlos A. Coello

190

142 IEEE TRANSACTIONS ON COMPUTERS, VOL. 46, NO. 2, FEBRUARY 1997 The Design of an Optoelectronic Arithmetic  

E-Print Network [OSTI]

142 IEEE TRANSACTIONS ON COMPUTERS, VOL. 46, NO. 2, FEBRUARY 1997 The Design of an Optoelectronic optoelectronic arithmetic units combining optical directional coupler switches and cyclic permutation networks

Oruc, A. Yavuz

191

Analysis of free-space optical interconnects for the three-dimensional optoelectronic stacked processor  

E-Print Network [OSTI]

Analysis of free-space optical interconnects for the three-dimensional optoelectronic stacked of free-space optical interconnect for the three-dimensional optoelectronic stacked processor (3DOESP) has VLSI; Optoelectronics; VCSELs 1. Introduction Current electronic interconnection technology cannot keep

Esener, Sadik C.

192

2009 Macmillan Publishers Limited. All rights reserved. An optoelectronic nose for the detection of  

E-Print Network [OSTI]

© 2009 Macmillan Publishers Limited. All rights reserved. An optoelectronic nose for the detection observable response, specifically colour changes quantified by digital imaging. Such an `optoelectronic nose of odorants. Our optoelectronic nose uses a colorimetric sensor array (CSA) that largely overcomes

Suslick, Kenneth S.

193

336 Florida Entomologist 84(3) September 2001 AN OPTOELECTRONIC SENSOR FOR MONITORING  

E-Print Network [OSTI]

336 Florida Entomologist 84(3) September 2001 AN OPTOELECTRONIC SENSOR FOR MONITORING SMALL optoelectronic system for measuring rapid movements in one dimension, such as the protraction of an insect leg, optoelectronic photodetector, cricket acoustic startle response RESUMEN Detectores ópticos de movimiento han sido

Hoy, Ronald R.

194

Self-starting ultralow-jitter pulse source based on coupled optoelectronic oscillators with an  

E-Print Network [OSTI]

Self-starting ultralow-jitter pulse source based on coupled optoelectronic oscillators, 2004 A self-starting optical pulse source based on mutually coupled optoelectronic oscillators optoelectronic oscillator with an intracavity fiber parametric amplifier. It self-starts and exhibits 3 ps pulses

Eisenstein, Gadi

195

IEEE PHOTONICS TECHNOLOGY LETTERS 1 Remote Optoelectronic Frequency Down-Conversion  

E-Print Network [OSTI]

IEEE PHOTONICS TECHNOLOGY LETTERS 1 Remote Optoelectronic Frequency Down-Conversion Using 60-GHz Kim, Associate Member, IEEE Abstract--A new optoelectronic frequency down-conversion method for radio local oscillator signals. Using this optoelectronic frequency down-converter, an RoF uplink

Choi, Woo-Young

196

JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 17, NO. 8, AUGUST 1999 1423 HBT Optoelectronic Mixer at Microwave  

E-Print Network [OSTI]

JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 17, NO. 8, AUGUST 1999 1423 HBT Optoelectronic Mixer discussed for both large and small signal regimes. I. INTRODUCTION OPTOELECTRONIC mixing is potentiallyP/GaInAs heterojunction bipolar transistors (HBT's) containing an optical access to the base, as an optoelectronic mixer

Eisenstein, Gadi

197

Optoelectronic Multi-Chip Module Demonstrator System Jason D. Bakos1  

E-Print Network [OSTI]

Optoelectronic Multi-Chip Module Demonstrator System Jason D. Bakos1 , Donald Chiarulli1 , Steven P of an optoelectronic 3-chip OE- MCM that implements a 64-channel non-blocking fiber optic switch. Keywords: Optical.0250) Optoelectronics, (110.2350) Fiber optics imaging 1. Introduction In previously published work [1, 2, 3, 4, 5], we

Bakos, Jason D.

198

GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies  

E-Print Network [OSTI]

LETTERS GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies-frequency electronics3,4 and most forms of optoelectronics5,6 . However, growing large, high quality wafers implementation. More tractable, yet still difficult, problems appear in advanced electronics and optoelectronics

Rogers, John A.

199

Single-cycle radio-frequency pulse generation by an optoelectronic  

E-Print Network [OSTI]

Single-cycle radio-frequency pulse generation by an optoelectronic oscillator Etgar C. Levy,1-locking of an optoelectronic oscillator which generates a single-cycle radio-frequency pulse train. The measured pulse to pulse by a passive mode-locked oscillator. The passive mode-locked optoelectronic oscillator is important

Horowitz, Moshe

200

Center for Optoelectronics and Photonics Paderborn 2 | www.ceopp.de  

E-Print Network [OSTI]

Center for Optoelectronics and Photonics Paderborn 2009 2010 #12;2 | www.ceopp.de #12;www perceives itself as a research university. Optoelectronics and photonics are significant areas of research within our university. With the foundation of the central research facil- ity "Center for Optoelectronics

Noé, Reinhold

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Development of the iPOINT Testbed for Optoelectronic Asynchronous Transfer Mode Networking  

E-Print Network [OSTI]

Development of the iPOINT Testbed for Optoelectronic Asynchronous Transfer Mode Networking Abstract. In conjunction of the UIUC microelectronics laboratory, low-cost optoelectronic components have been developed the integration of time-division multiplexors, ATM switches, optoelectronic components, and ber-optics. As shown

Lockwood, John W.

202

Simplified optoelectronic 3R regenerator using nonlinear electro-optical transformation in an  

E-Print Network [OSTI]

Simplified optoelectronic 3R regenerator using nonlinear electro-optical transformation: A simplified optoelectronic 3R regenerator without electrical signal processing is demonstrated by utilizing 80000 km dispersion shifted fibre using compact opto-electronic-3R regeneration," in Proc. European

Bowers, John

203

Center for Optoelectronics and Photonics Paderborn 2 | www.ceopp.de  

E-Print Network [OSTI]

Center for Optoelectronics and Photonics Paderborn 2012 2013 #12;2 | www.ceopp.de #12;www- born perceives itself as a research university. Optoelectronics and photonics are significant areas for Optoelectronics and Photonics Paderborn" (CeOPP) in the year 2006, the joint research activities in the fields

Noé, Reinhold

204

Comprehensive computational model of single-and dual-loop optoelectronic  

E-Print Network [OSTI]

Comprehensive computational model of single- and dual-loop optoelectronic oscillators describe a comprehensive computational model for single- loop and dual-loop optoelectronic oscillators amplifiers and oscillators; (230.0250) Optoelectronics; (230.4910) Oscillators. References and links 1. X. S

Horowitz, Moshe

205

Investigation in acousto-optic laser stabilization for crystal resonator based optoelectronic oscillators  

E-Print Network [OSTI]

1 Investigation in acousto-optic laser stabilization for crystal resonator based optoelectronic to stabilize a microwave signal generated by an optoelectronic oscillator (OEO). Bulk acoustic waves at two is operating for any resonator to be inserted into the optoelectronic oscillator with a Q factor in the range 2

Paris-Sud XI, Université de

206

OPTOELECTRONIC MULTI-CHIP MODULES D.CHIARULLI,S. LEVITAN,J. BAKOS  

E-Print Network [OSTI]

OPTOELECTRONIC MULTI-CHIP MODULES D.CHIARULLI,S. LEVITAN,J. BAKOS UNIVERSITY OF PITTSBURGH present a novel packaging architecture for Optoelectronic Multi-Chip-Modules (OEMCM) based on fiber image presents an alternative for next generation systems: 3D optoelectronic-multi-chip- modules (OE

Bakos, Jason D.

207

Electronic properties of 2D and 3D hybrid organic/inorganic perovskites for optoelectronic  

E-Print Network [OSTI]

Electronic properties of 2D and 3D hybrid organic/inorganic perovskites for optoelectronic, optoelectronic properties, photovoltaic, exciton 1. Introduction Over the past decade, Hybrid Organic/inorganic Perovskites (HOP) have attracted increasing interest in the field of optoelectronics (Mitzi et al. 1995

Paris-Sud XI, Université de

208

nD-RAPID: a multidimensional scalable fault-tolerant optoelectronic  

E-Print Network [OSTI]

nD-RAPID: a multidimensional scalable fault-tolerant optoelectronic interconnection for high of faults. We propose a multidimen- sional optoelectronic architecture, nD-RAPID (reconfigurable, and latency [4­7]. In this paper, we propose a novel optoelectronic architecture nD-RAPID (n Dimen- sional

Louri, Ahmed

209

Design and construction of the high-speed optoelectronic memory system  

E-Print Network [OSTI]

Design and construction of the high-speed optoelectronic memory system demonstrator Roberto-speed optoelectronic memory system project is concerned with the reduction of latency within multiprocessor computer systems (a key problem) by the use of optoelectronics and associated packaging technologies. System

Jahns, Jürgen

210

Optical disk resonators with micro-wave free spectral range for optoelectronic oscillator  

E-Print Network [OSTI]

Optical disk resonators with micro-wave free spectral range for optoelectronic oscillator Herv to the resonator relaxation time = Q/ [2]. The optoelectronic delayed feed- back loop can thus oscillate at all. frequency selective resonator (e.g with a high Q factor). The detailed architecture is an optoelectronic

Paris-Sud XI, Université de

211

Spin and Charge Quantum Transport in Organic/Magnetic Heterostructures for Spintronics and Optoelectronic  

E-Print Network [OSTI]

and Optoelectronic This research project is one of the Seed Projects of the Caltech Center for Science to optimizing the spintronic and optoelectronic properties of organic semiconductor/ferromagnet heterostructures they are highly adaptable and exhibit interesting properties for optoelectronic applications.ii The weak spin

Yeh, Nai-Chang

212

Optoelectronic Oscillator Based on Fiber Ring Resonator: Overall System Optimization and Phase  

E-Print Network [OSTI]

Optoelectronic Oscillator Based on Fiber Ring Resonator: Overall System Optimization and Phase of an optoelectronic oscillator based on a passive fiber ring resonator. Our experimental results demonstrate existing oscillator of the same type, an active cavity based coupled optoelectronic oscillator. I

Paris-Sud XI, Université de

213

Optoelectronic Multi-Chip-Module Implementation of a 64-Channel Fiber Switch  

E-Print Network [OSTI]

Optoelectronic Multi-Chip-Module Implementation of a 64-Channel Fiber Switch Jason D. Bakos, Donald We present a demonstration prototype of an optoelectronic 3-chip OE-MCM module that implements a 64,2] we have proposed a novel design for optoelectronic multi-chip-modules (OE-MCM) based on small

Bakos, Jason D.

214

Integrated Optoelectronics in an Optical Fiber J. V. Badding*a,d  

E-Print Network [OSTI]

Integrated Optoelectronics in an Optical Fiber J. V. Badding*a,d , P. J. Saziob , V. Gopalanc.d , A,d , a Department of Chemistry, Pennsylvania State University, University Park, PA, USA 16802; b Optoelectronics optoelectronic function with glass optical fibers is discussed. A chemical vapor deposition (CVD)-like process

Gopalan, Venkatraman

215

Optoelectronic Oscillators and Their Applications to 60-GHz Fiber-Fed  

E-Print Network [OSTI]

Optoelectronic Oscillators and Their Applications to 60-GHz Fiber-Fed Wireless Systems Kwang;Optoelectronic Oscillators and Their Applications to 60-GHz Fiber-Fed Wireless Systems by Kwang-Hyun Lee-1-2. Oscillator phase noise limited by resonator's Q.............................4 1-2. Optoelectronic oscillators

Choi, Woo-Young

216

Millimeter-wave Optoelectronic Mixers Based on CMOS-Compatible Si Photodetectors  

E-Print Network [OSTI]

Millimeter-wave Optoelectronic Mixers Based on CMOS-Compatible Si Photodetectors Hyo-Soon Kang-749, Korea Abstract -- We present millimeter-wave optoelectronic mixers based on Si photodetectors fabricated and optoelectronic mixer characteristics are investigated in order to optimize their performances. Using

Choi, Woo-Young

217

Computational Geometry On The OTIS-Mesh Optoelectronic Computer Chih-fang Wang Sartaj Sahni  

E-Print Network [OSTI]

Computational Geometry On The OTIS-Mesh Optoelectronic Computer Chih-fang Wang Sartaj Sahni: optoelectronic computer, OTIS- Mesh, convex hull, smallest enclosing box, ECDF, two-set dominance, maximal points within the group. The OTIS-Mesh optoelectronic computer is a class of OTIS computers in which

Sahni, Sartaj K.

218

Optoelectronic Properties of Self-Assembled InAs/InGaAs Quantum SANJAY KRISHNA  

E-Print Network [OSTI]

CHAPTER 10 Optoelectronic Properties of Self-Assembled InAs/InGaAs Quantum Dots SANJAY KRISHNA that exists in zero-dimensional systems but also for their application in electronic and optoelectronic-speed- and opto-electronics". In particular, with the advent of optical fibers and the ever increasing need

Krishna, Sanjay

219

Extraction and Modeling of the Optoelectronic Characteristics of an Optical Interconnect Link  

E-Print Network [OSTI]

Extraction and Modeling of the Optoelectronic Characteristics of an Optical Interconnect Link a technique that enables the extraction and modeling of some of the channel's optoelectronic characteristics and optoelectronic com- ponents utilized in the link. 1. Introduction In the last decade optical interconnects have

Esener, Sadik C.

220

SO8 IEEE PHOTONICS TECHNOLOGY LETTERS. VOL. 7 , NO. S. MAY 1995 Monolithic Optoelectronic Circuit Design  

E-Print Network [OSTI]

SO8 IEEE PHOTONICS TECHNOLOGY LETTERS. VOL. 7 , NO. S. MAY 1995 Monolithic Optoelectronic Circuit optoelectronic integration technique was proposed based on this circuit stability and consequently the monolithic integration of LED's and GaAs circuits by molecular beam epitaxial (MBE) growth, to form an optoelectronic

Shenoy, Krishna V.

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

INTEGRATION OF OPTOELECTRONICS AND MICROFLUIDICS FOR BIOLOGICAL AND CHEMICAL SENSING  

E-Print Network [OSTI]

INTEGRATION OF OPTOELECTRONICS AND MICROFLUIDICS FOR BIOLOGICAL AND CHEMICAL SENSING Thesis by Mark Over the past decade, rapid advances in microfluidics have led to the creation of valves, pumps, mixers of microfluidics is the need for a typically large interrogation setup to determine what is actually happening

Quake, Stephen R.

222

BROADBAND ANALOG OPTO-ELECTRONIC BLIND SOURCE SEPARATION  

E-Print Network [OSTI]

-electronic blind source separation Thesis directed by Professor Zoya Popovic This thesis addresses the problemBROADBAND ANALOG OPTO-ELECTRONIC BLIND SOURCE SEPARATION by PAUL CARSON SMITH B.E., University of Colorado, 2000 M.S., University of Colorado, 2000 A thesis submitted to the Faculty of the Graduate School

Popovic, Zoya

223

OMVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics (title change from A)  

SciTech Connect (OSTI)

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GrdnN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

HAN,JUNG; FIGIEL,JEFFREY J.; PETERSEN,GARY A.; MYERS JR.,SAMUEL M.; CRAWFORD,MARY H.; BANAS,MICHAEL ANTHONY; HEARNE,SEAN JOSEPH

2000-01-18T23:59:59.000Z

224

Models of organometallic complexes for optoelectronic applications  

E-Print Network [OSTI]

Organometallic complexes have potential applications as the optically active components of organic light emitting diodes (OLEDs) and organic photovoltaics (OPV). Development of more effective complexes may be aided by understanding their excited state properties. Here we discuss two key theoretical approaches to investigate these complexes: first principles atomistic models and effective Hamiltonian models. We review applications of these methods, such as, determining the nature of the emitting state, predicting the fraction of injected charges that form triplet excitations, and explaining the sensitivity of device performance to small changes in the molecular structure of the organometallic complexes.

A. C. Jacko; Ross H. McKenzie; B. J. Powell

2010-07-02T23:59:59.000Z

225

Device-scale perpendicular alignment of colloidal nanorods  

E-Print Network [OSTI]

direction (necessary for optoelectronics), but such arrayssolution-processed optoelectronics with performance matching

Baker, Jessica L.

2010-01-01T23:59:59.000Z

226

Organic photosensitive devices using subphthalocyanine compounds  

DOE Patents [OSTI]

An organic photosensitive optoelectronic device, having a donor-acceptor heterojunction of a donor-like material and an acceptor-like material and methods of making such devices is provided. At least one of the donor-like material and the acceptor-like material includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound; and/or the device optionally has at least one of a blocking layer or a charge transport layer, where the blocking layer and/or the charge transport layer includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound.

Rand, Barry (Princeton, NJ); Forrest, Stephen R. (Ann Arbor, MI); Mutolo, Kristin L. (Hollywood, CA); Mayo, Elizabeth (Alhambra, CA); Thompson, Mark E. (Anaheim Hills, CA)

2011-07-05T23:59:59.000Z

227

Integration of optoelectronics and MEMS by free-space micro-optics  

SciTech Connect (OSTI)

This report represents the completion of a three-year Laboratory-Directed Research and Development (LDRD) program to investigate combining microelectromechanical systems (MEMS) with optoelectronic components as a means of realizing compact optomechanical subsystems. Some examples of possible applications are laser beam scanning, switching and routing and active focusing, spectral filtering or shattering of optical sources. The two technologies use dissimilar materials with significant compatibility problems for a common process line. This project emphasized a hybrid approach to integrating optoelectronics and MEMS. Significant progress was made in developing processing capabilities for adding optical function to MEMS components, such as metal mirror coatings and through-vias in the substrate. These processes were used to demonstrate two integration examples, a MEMS discriminator driven by laser illuminated photovoltaic cells and a MEMS shutter or chopper. Another major difficulty with direct integration is providing the optical path for the MEMS components to interact with the light. The authors explored using folded optical paths in a transparent substrate to provide the interconnection route between the components of the system. The components can be surface-mounted by flip-chip bonding to the substrate. Micro-optics can be fabricated into the substrate to reflect and refocus the light so that it can propagate from one device to another and them be directed out of the substrate into free space. The MEMS components do not require the development of transparent optics and can be completely compatible with the current 5-level polysilicon process. They report progress on a MEMS-based laser scanner using these concepts.

WARREN,MIAL E.; SPAHN,OLGA B.; SWEATT,WILLIAM C.; SHUL,RANDY J.; WENDT,JOEL R.; VAWTER,GREGORY A.; KRYGOWSKI,TOM W.; REYES,DAVID NMN; RODGERS,M. STEVEN; SNIEGOWSKI,JEFFRY J.

2000-06-01T23:59:59.000Z

228

Graphene-based Material Systems for Nanoelectronics and Energy Storage Devices  

E-Print Network [OSTI]

Graphene photonics and optoelectronics" Nature PhotonicsFilm Electronics and Optoelectronics" Advanced MaterialsFilm Electronics and Optoelectronics" Advanced Materials

Guo, Shirui

2012-01-01T23:59:59.000Z

229

Mobile Communication Device Allowance Authorization Form Revised: April 2011 MOBILE COMMUNICATION DEVICE ALLOWANCE AUTHORIZATION FORM  

E-Print Network [OSTI]

Mobile Communication Device Allowance Authorization Form Revised: April 2011 MOBILE COMMUNICATION list your CURRENT PLAN features: Mobile service provider Name: ________ Monthly Charge: $ Device.edu/policy/itc/FINAL%20Policy%20on%20Mobile%20Comm%20Devices.htm I have read the Mobile Communication Devices Policy

Dyer, Bill

230

2=picosecond, GaAs photodiode optoelectronic circuit for optical correlation applications  

E-Print Network [OSTI]

2=picosecond, GaAs photodiode optoelectronic circuit for optical correlation applications K. D. Li GaAs Schottky photodiode is monolithically integrated with a microwave detector. By using this new optoelectronic circuit.in place of a nonlinear crystal in an optical correlation setup, the high-speed photodiode

Ozbay, Ekmel

231

Single ultrafast diffusive conduction based optoelectronic switch for multi-channel operation  

E-Print Network [OSTI]

Single ultrafast diffusive conduction based optoelectronic switch for multi-channel operation Fatih to multi-channel operation, including Green's function diffusive conduction solution and crosstalk conduction based optoelectronic switches that accommodate >100 optical channels (with 2,000mm-2 channel

Miller, David A. B.

232

2236 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 16, NO. 12, DECEMBER 1998 Wafer-Fused Optoelectronics for Switching  

E-Print Network [OSTI]

2236 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 16, NO. 12, DECEMBER 1998 Wafer-Fused Optoelectronics will also be discussed. Index Terms--Integrated optoelectronics, optical couplers, op- tical switches

233

SPIE Proceedings BIOS 2005, Ophthalmic Technologies XV, vol. 5688A, paper 37 Towards High-Resolution Optoelectronic Retinal Prosthesis  

E-Print Network [OSTI]

-Resolution Optoelectronic Retinal Prosthesis Daniel Palankera,b , Philip Huiea,b , Alexander Vankovb , Alon Ashera , Steven a design of the optoelectronic retinal prosthetic system that can activate a retinal stimulating array

Palanker, Daniel

234

Nondestructive and noncontact methods for optoelectronic diagnostics of solar cells at all stages of the fabrication process are in strong demand.  

E-Print Network [OSTI]

Nondestructive and noncontact methods for optoelectronic diagnostics of solar cells at all stages-destructive diffusion-wave method for optoelectronic transport and equivalent electrical circuit diagnostics

Mandelis, Andreas

235

Strain relaxation of SiGe islands on compliant oxide Center for Photonics and Optoelectronic Materials and Department of Electrical Engineering,  

E-Print Network [OSTI]

and Optoelectronic Materials and Department of Electrical Engineering, Princeton University, Princeton, New Jersey Laboratory, Washington, DC 20375 J. C. Sturm Center for Photonics and Optoelectronic Materials and Department

Duffy, Thomas S.

236

FUNCTIONAL NEUROIMAGING STUDIES OF READING AND READING DISABILITY  

E-Print Network [OSTI]

FUNCTIONAL NEUROIMAGING STUDIES OF READING AND READING DISABILITY (DEVELOPMENTAL DYSLEXIA) Kenneth in develop- mental dyslexia. Reading disabled readers, relative to nonimpaired readers, demonstrate Reviews 2000;6:207­213. Key Words: dyslexia; neuroimaging; reading; lexical processing; phonol- ogy R

237

IEEE ULTRASONICS SYMPOSIUM 1998 IN SENDAI, JAPAN 1 Novel optoelectronic signal processing via the combination of SAW  

E-Print Network [OSTI]

IEEE ULTRASONICS SYMPOSIUM 1998 IN SENDAI, JAPAN 1 Novel optoelectronic signal processing via a completely new and promising approach to- ward another generation of acoustoelectric and optoelectronic heterostructure can be exploited to alter the optical proper- ties of an optoelectronic structure in many ways

Ludwig-Maximilians-Universität, München

238

Millimeter-wave Optoelectronic Mixers based on InP HEMT Chang-Soon Choi and Woo-Young Choi  

E-Print Network [OSTI]

Millimeter-wave Optoelectronic Mixers based on InP HEMT Chang-Soon Choi and Woo-Young Choi optoelectronic mixers in 60GHz band. They provide mixing function with high internal conversion gain over be utilized as optoelectronic mixers which perform photodetection of optically transmitted data and

Choi, Woo-Young

239

Journal of Microwaves, Optoelectronics and Electromagnetic Applications, Vol. X, No. Y, Month 2010 Numerical treatment of rounded and sharp  

E-Print Network [OSTI]

Journal of Microwaves, Optoelectronics and Electromagnetic Applications, Vol. X, No. Y, Month 2010 the corners for any value of . For a precise definition, refer to [2]. Brazilian Microwave and Optoelectronics in "journal of microwaves, optoelectronics and electromagnetic applications 10, 1 (2011) 66-81" DOI : 10

Boyer, Edmond

240

A Millimeter-wave Harmonic Optoelectronic Mixer based on InAlAs/InGaAs Metamorphic HEMT  

E-Print Network [OSTI]

A Millimeter-wave Harmonic Optoelectronic Mixer based on InAlAs/InGaAs Metamorphic HEMT ChangAs substrate as a harmonic optoelectronic mixer. The fabricated metamorphic HEMT simultaneously performs photodetection at 1.55µµµµm lightwave and harmonic optoelectronic up-conversion into millimeter-wave band

Choi, Woo-Young

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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241

624 IEEE JOURNAL ON SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 9, NO. 2, MARCH/APRIL 2003 Optoelectronic Interconnection Technology  

E-Print Network [OSTI]

Optoelectronic Interconnection Technology in the HOLMS System Paul Lukowicz, Member, IEEE, Jürgen Jahns, Member. Süllau, J. F. Snowdon, M. Wirz, and G. Tröster Invited Paper Abstract--The High-Speed Optoelectronic and economical by developing optoelectronic packaging tech- nology compatible with standard electronic assembly

Jahns, Jürgen

242

JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 16, NO. 3, MARCH 1998 443 Optoelectronic Mixing Using a Short Cavity  

E-Print Network [OSTI]

JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 16, NO. 3, MARCH 1998 443 Optoelectronic Mixing Using a Short, IEEE, and U. Koren Abstract--We describe optoelectronic mixing in a short cavity distributed Bragg with an increasing frequency is slower. Index Terms--Analog microwave/optics, optoelectronic mixing. I. INTRODUCTION

Eisenstein, Gadi

243

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 20, NO. 19, OCTOBER 1, 2008 1645 Injection-Locked Hybrid Optoelectronic Oscillators  

E-Print Network [OSTI]

Optoelectronic Oscillators for Single-Mode Oscillation Kwang-Hyun Lee, Jae-Young Kim, and Woo-Young Choi Abstract--We demonstrate single-mode extraction from mul- tiple modes in a 30-GHz optoelectronic oscillator (OEO by changing the electrical oscillation frequency. Index Terms--Injection-locked oscilator, optoelectronic

Choi, Woo-Young

244

Direct optoelectronic generation and detection of sub-ps-electrical pulses on sub-mm-coaxial transmission lines  

E-Print Network [OSTI]

Direct optoelectronic generation and detection of sub-ps-electrical pulses on sub efficient direct optoelectronic generation of sub-ps-THz pulses on 50 coaxial transmission lines with a 330 with an optoelectronic antenna having sub-ps-time resolution. We observed low-loss, single transverse electromagnetic

245

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 20, NO. 13, JULY 1, 2008 1151 Low-Cost Optoelectronic Self-Injection-Locked  

E-Print Network [OSTI]

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 20, NO. 13, JULY 1, 2008 1151 Low-Cost Optoelectronic Self by injecting 8-dBm optical signals without using any high-speed optoelectronic components. Index Terms--InP monolithic oscillator, optoelectronic oscillator (OEO), phase-noise reduction, self-injection locking (SIL

Choi, Woo-Young

246

Design of a Crossbar Switch Chip for Use in a Demonstration System of an Optoelectronic Multi-Chip Module  

E-Print Network [OSTI]

Design of a Crossbar Switch Chip for Use in a Demonstration System of an Optoelectronic Multi in the area of optoelectronic interconnection and packaging technology in order to proliferate the feasibility of extremely high bandwidth and low latency optoelectronic "multi-chip modules" (OE-MCMs). Our group

Bakos, Jason D.

247

An Optoelectronic Multi-Terabit CMOS Switch Core for Local Area Networks Honglin Wu, Amir Gourgy, and Ted H. Szymanski  

E-Print Network [OSTI]

1 An Optoelectronic Multi-Terabit CMOS Switch Core for Local Area Networks Honglin Wu, Amir Gourgy@grads.ece.mcmaster.ca, and teds@mail.ece.mcmaster.ca Abstract Optoelectronic integrated circuits can support thousands of an integrated optoelectronic CMOS crossbar switch to interconnect approx. 128 parallel fiber ribbon optical

Szymanski, Ted

248

Multi-rhythmicity in an optoelectronic oscillator with large delay  

E-Print Network [OSTI]

An optoelectronic oscillator exhibiting a large delay in its feedback loop is studied both experimentally and theoretically. We show that multiple square-wave oscillations may coexist for the same values of the parameters (multi-rhythmicity). Depending on the sign of the phase shift, these regimes admit either periods close to an integer fraction of the delay or periods close to an odd integer fraction of twice the delay. These periodic solutions emerge from successive Hopf bifurcation points and stabilize at a finite amplitude following a scenario similar to Eckhaus instability in spatially extended systems. We find quantitative agreements between experiments and numerical simulations. The linear stability of the square-waves is substantiated analytically by determining stable fixed points of a map.

Weicker, Lionel; Rosin, David P; Gauthier, Daniel J

2014-01-01T23:59:59.000Z

249

Fabrication and characterization of quantum-confined optoelectronic devices based on CdSe nanocrystals  

E-Print Network [OSTI]

Colloidal semiconductor quantum dots (QDs), or nanocrystals (NCs), are the subject of intense research for their novel size dependent optical and electronic properties. Since the development of synthetic methods to produce ...

Woo, Wing-Keung, 1972-

2002-01-01T23:59:59.000Z

250

Physics of Optoelectronic and Plasmonic Devices: Cavities, Waveguides, Modulators and Lasers  

E-Print Network [OSTI]

used. The resulting EL vs. electrical power input curves area electrical 4-probe test and determined to be 6 cm 2 /Vs,

Sorger, Volker J.

2011-01-01T23:59:59.000Z

251

3D Simulation of Integrated Optoelectronic Devices Nicolas Trenado, Jeff Henness, Leif Johansson, John Hutchinson,  

E-Print Network [OSTI]

Stark effect) are considered as well as free-carrier and intervalence band absorption. InGaAsP material, optical waveguiding, and Bragg reflection [2]. Field effects on MQW gain and absorption (quantum confined-uniform absorption due to band filling, which results in a non-linear detector response. Forward bias gives optical

Coldren, Larry A.

252

The impact of manufacturing offshore on technology development paths in the automotive and optoelectronics industries  

E-Print Network [OSTI]

This dissertation presents a two-case study of the impact of manufacturing offshore on the technology trajectory of the firm and the industry. It looks in particular at the automotive and optoelectronics industries. The ...

Fuchs, Erica R. H. (Erica Renee H.), 1977-

2006-01-01T23:59:59.000Z

253

Optoelectronic implementations of Pulse-Coupled Neural Networks : challenges and limitations  

E-Print Network [OSTI]

This thesis examines Pulse Coupled Neural Networks (PCNNs) and their applications, and the feasibility of a compact, rugged, cost-efficient optoelectronic implementation. Simulation results are presented. Proposed optical ...

Wise, Raydiance (Raydiance Raychele)

2007-01-01T23:59:59.000Z

254

Characterization of polygrama green photopolymer for Compact Optoelectronic Integrated Neural (COIN) coprocessor applications  

E-Print Network [OSTI]

The research described in this thesis is a portion of a larger project within the Photonic Systems Group at MIT to design Compact Optoelectronic Integrated Neural (COIN) co processor [13]. The choice of photopolymers is ...

Harton, Renee M

2008-01-01T23:59:59.000Z

255

SUPERCONDUCTING DEVICES  

E-Print Network [OSTI]

communications. References Superconductor Applications: ~on all aspects of superconducting devices. IEEE Trans.on all aspects vf superconducting devices. The IBM Journal

Clarke, John

2014-01-01T23:59:59.000Z

256

SUPERCONDUCTING DEVICES  

E-Print Network [OSTI]

on all aspects of superconducting devices. IEEE Trans.on all aspects vf superconducting devices. The IBM JournalJ. Matisoo, The Superconducting Computer," Scientific

Clarke, John

2014-01-01T23:59:59.000Z

257

Fabrication of optoelectronic microwave linear and ring resonators on a gallium arsenide substrate  

E-Print Network [OSTI]

FABRICATION OF OPTOELECTRONIC MICROWAVE LINEAR AND RING RESONATORS ON A GALLIUM ARSENIDE SUBSTRATE A Thesis by CHUN-LIANG YEH Submitted to the Office of Graduate Studies of Texas ASM University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE August 1993 Major Subject: Electrical Engineering FABRICATION OF OPTOELECTRONIC MICROWAVE LINEAR AND RING RESONATORS ON A GALLIUM ARSENIDE SUBSTRATE A Thesis by CHUN-LIANG YEH Approved as to style and content by: Mark...

Yeh, Chun-Liang

1993-01-01T23:59:59.000Z

258

Printed Optics: 3D Printing of Embedded Optical Elements for Interactive Devices  

E-Print Network [OSTI]

Printed Optics: 3D Printing of Embedded Optical Elements for Interactive Devices Karl D.D. Willis1 d Figure 1: Custom optical elements are fabricated with 3D printing and embedded in interactive), and embedded optoelectronics (d). ABSTRACT We present an approach to 3D printing custom optical ele- ments

Poupyrev, Ivan

259

Surface plasmon-enhanced photovoltaic device  

SciTech Connect (OSTI)

Photovoltaic devices are driven by intense photoemission of "hot" electrons from a suitable nanostructured metal. The metal should be an electron source with surface plasmon resonance within the visible and near-visible spectrum range (near IR to near UV (about 300 to 1000 nm)). Suitable metals include silver, gold, copper and alloys of silver, gold and copper with each other. Silver is particularly preferred for its advantageous opto-electronic properties in the near UV and visible spectrum range, relatively low cost, and simplicity of processing.

Kostecki, Robert; Mao, Samuel

2014-10-07T23:59:59.000Z

260

Daydreaming Devices  

E-Print Network [OSTI]

Daydreaming Devices is a project on aspects of daydream and the design of convertible furniture within the context of art. This thesis addresses the concepts and the design of two daydreaming devices developed during my ...

Da Ponte, Ana Sofia Lopes

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Fabrication and Low-Frequency Noise Characterization of Devices Made From Dirac Materials  

E-Print Network [OSTI]

Nanoelectronics and Optoelectronics, 6, 1-5 (2011). [13] J. of Nanoelectronics and Optoelectronics, 6, 1-5 (2011).Nanoelectronics and Optoelectronics, 6, 1-5 (2011). Figure

Hossain, Md. Zahid

2012-01-01T23:59:59.000Z

262

Generalized Volterra Series model for highly nonlinear optical interconnects, circuits and devices  

E-Print Network [OSTI]

Organic Optics and Optoelectronics. 1998 IEEE/ LEOS SummerInternational Journal of Optoelectronics , Vol. 11, No: 3,VCSELs, Honeywell Optoelectronics Application Note. F.

Ycetrk, Emel

2007-01-01T23:59:59.000Z

263

PHOTONICS and DEVICE MICROFABRICATION  

E-Print Network [OSTI]

in the University. Our key objective is to bridge the gap between academic research and industrial application that are in demand in the semiconductor and optoelectronics industries and other high- technology manufacturing

Mottram, Nigel

264

Strain partition of SiSiGe and SiO2 SiGe on compliant substrates Center for Photonics and Optoelectronic Materials and Department of Electrical Engineering,  

E-Print Network [OSTI]

and Optoelectronic Materials and Department of Electrical Engineering, Princeton University, Princeton, New Jersey for Photonics and Optoelectronic Materials and Department of Electrical Engineering, Princeton University

Duffy, Thomas S.

265

Approved 10-06 Clemson University: Master of Education in Reading  

E-Print Network [OSTI]

coursework. II. Reading Teacher & Reading Consultant certifications + Reading Recovery Training Organizing and Supervising Reading Programs 3 hours READ 864 Teaching Secondary School Reading 3 hours READ Plan II. Reading Recovery Teacher, Reading Teacher & Reading Consultant READ 880 Reading Recovery

Stuart, Steven J.

266

Reading context in design  

E-Print Network [OSTI]

This study explores how, in the process of design, the reading of an existing order in the organizing features of a setting potentiates form. For this purpose, a design exercise on a site in the city of Jaipur in India has ...

Agrawal, Vivek

1993-01-01T23:59:59.000Z

267

Sealing device  

DOE Patents [OSTI]

A sealing device for sealing a gap between a dovetail of a bucket assembly and a rotor wheel is disclosed. The sealing device includes a cover plate configured to cover the gap and a retention member protruding from the cover plate and configured to engage the dovetail. The sealing device provides a seal against the gap when the bucket assemply is subjected to a centrifugal force.

Garcia-Crespo, Andres Jose

2013-12-10T23:59:59.000Z

268

Millimeter-wave InP/InGaAs HPT optoelectronic mixers and their application to 60GHz bi-directional radio-on-fiber systems  

E-Print Network [OSTI]

#12;Millimeter-wave InP/InGaAs HPT optoelectronic mixers and their application to 60GHz bi demonstrate the use of InP/InGaAs heterojunction phototransistors as optoelectronic mixers for bi are frequency up-converted to millimeter-wave band signals in InP HPT optoelectronic mixer with remotely

Choi, Woo-Young

269

Non-Shilnikov cascades of spikes and hubs in a semiconductor laser with optoelectronic feedback Joana G. Freire1,2  

E-Print Network [OSTI]

Non-Shilnikov cascades of spikes and hubs in a semiconductor laser with optoelectronic feedback Incomplete homoclinic scenarios were recently measured in a semiconductor laser with optoelectronic feed comprehensive review, see Wieczorek et al. 6 . The impact of optoelectronic systems in the science and applica

Gallas, Jason

270

Suppression of intensity noise of a laser-diode-pumped single-frequency Nd:YVO4 laser by optoelectronic control  

E-Print Network [OSTI]

by optoelectronic control Jing Zhang, Hongliang Ma, Changde Xie, and Kunchi Peng The intensity-noise reduction of a laser-diode-pumped single-frequency ring Nd:YVO4 laser when differ- ent optoelectronic control systems techniques, optoelectronic feedback control of the drive current of the pump laser diode and feed

Zhang, Jing

271

Optoelectronic Mixers for Fiber-fed 60-GHz Wireless Systems Woo-Young Choi, Jae-Young Kim and Myung-Jae Lee  

E-Print Network [OSTI]

#12;Optoelectronic Mixers for Fiber-fed 60-GHz Wireless Systems Woo-Young Choi, Jae-Young Kim investigated millimeter-wave fiber-fed wireless systems using optoelectronic mixers based on hetero-effective optoelectronic (O/E) mixer, which performs photo- detection and frequency conversion functions simultaneously. We

Choi, Woo-Young

272

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 5, NO. 2, MARCH/APRIL 1999 261 The AMOEBA Switch: An Optoelectronic Switch  

E-Print Network [OSTI]

The AMOEBA Switch: An Optoelectronic Switch for Multiprocessor Networking Using Dense-WDM Ashok V- cessor optoelectronic bit-sliced arrayed (AMOEBA) crossbar switch. The AMOEBA switch addresses directly onto silicon VLSI circuits. Optoelectronic-VLSI technology is used to integrate the switch fabric

Ford, Joseph E.

273

In Proceedings of the IEEE Special Issue on Optical Computing, Nov. 1994. Optoelectronic Time-of-Flight Design and the Demonstration  

E-Print Network [OSTI]

In Proceedings of the IEEE Special Issue on Optical Computing, Nov. 1994. Optoelectronic Time P. Heuring, Robert Feuerstein Optoelectronic Computing Systems Center University of Colorado optoelectronic design. It was made possible by a new digi- tal design method known as time-of-flight design

Heuring, Vincent

274

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

275

IEEE JOURNAL ON SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 6, NO. 6, NOVEMBER/DECEMBER 2000 1231 Microsystem Optoelectronic Integration for Mixed  

E-Print Network [OSTI]

Microsystem Optoelectronic Integration for Mixed Multisignal Systems Nan M. Jokerst, Senior Member, IEEE of optoelectronic de- vices with electronic circuits and systems has growing application in many fields, ranging- ment tolerant optoelectronic links for network interconnections, smart pixel focal plane array

Wills, Scott

276

FUEL DEVICE APPLICATION Use this application to request a fuel device to access the University of Michigan (U-M) Parking and Transportation  

E-Print Network [OSTI]

FUEL DEVICE APPLICATION Use this application to request a fuel device to access the University of Michigan (U-M) Parking and Transportation Services (PTS) service stations for fuel. A fuel device owned and managed by PTS Fleet Services equipped with an automated fuel device. Please read the Use

Kirschner, Denise

277

Reading Arendt in Iran/Reading Iran through Arendt: Speech,  

E-Print Network [OSTI]

Reading Arendt in Iran/Reading Iran through Arendt: Speech, Action, and the Question Arendt in Iran/Reading Iran through Arendt: Speech, Action, and the Question of Street Politics for Arendt readers in the postrevolutionary context of the Islamic Republic of Iran. Arendt's skepticism

Illinois at Chicago, University of

278

Technology Control Plan Grigg Hall houses most of the University's optical and optoelectronic research facilities,  

E-Print Network [OSTI]

Technology Control Plan Grigg Hall Grigg Hall houses most of the University's optical) and subject to export control regulations. This Technology Control Plan has been developed to ensure for Optoelectronics and Optical Communications (in the case of Center labs). Additionally, Clean Room facilities

Howitt, Ivan

279

Luminescent Silicon Nanoparticles Capped by Conductive Polyaniline through the Self-Assembly Method  

E-Print Network [OSTI]

optoelectronic devices. These applications in- clude their use as chemical sensors,9 optoelectronic devices,10

Swihart, Mark T.

280

Electrochromic devices  

DOE Patents [OSTI]

An electrochromic device is disclosed having a selective ion transport layer which separates an electrochemically active material from an electrolyte containing a redox active material. The devices are particularly useful as large area architectural and automotive glazings due to there reduced back reaction.

Allemand, Pierre M. (Tucson, AZ); Grimes, Randall F. (Ann Arbor, MI); Ingle, Andrew R. (Tucson, AZ); Cronin, John P. (Tucson, AZ); Kennedy, Steve R. (Tuscon, AZ); Agrawal, Anoop (Tucson, AZ); Boulton, Jonathan M. (Tucson, AZ)

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Toward nanowire devices and systems : heterostructure design and dielectrophoretic integration  

E-Print Network [OSTI]

in electronics, 3-8 optoelectronics, 9 - 13 sensing 14-17in electronics, 6 optoelectronics, 40 sensing 41 andin electronics, 8-13 optoelectronics, 14 sensing 19-22 and

Raychaudhuri, Sourobh

2009-01-01T23:59:59.000Z

282

Device Performance  

SciTech Connect (OSTI)

In the Device Performance group, within the National Center for Photovoltaic's Measurements and Characterization Division, we measure the performance of PV cells and modules with respect to standard reporting conditions--defined as a reference temperature (25 C), total irradiance (1000 Wm-2), and spectral irradiance distribution (IEC standard 60904-3). Typically, these are ''global'' reference conditions, but we can measure with respect to any reference set. To determine device performance, we conduct two general categories of measurements: spectral responsivity (SR) and current versus voltage (I-V). We usually perform these measurements using standard procedures, but we develop new procedures when required by new technologies. We also serve as an independent facility for verifying device performance for the entire PV community. We help the PV community solve its special measurement problems, giving advice on solar simulation, instrumentation for I-V measurements, reference cells, measurement procedures, and anomalous results. And we collaborate with researchers to analyze devices and materials.

Not Available

2006-06-01T23:59:59.000Z

284

Microchannel devices  

SciTech Connect (OSTI)

The fabrication of stainless steel microchannel heat exchangers was examined through microlamination, the process of diffusion bonding precision machined metallic foils. The influence of diffusion bonding parameters, as well as the device geometry on the strength of the bond between the foils and embedded channel integrity, was investigated. During diffusion bonding, high temperatures and/or pressures result in well bonded foils, but these conditions cause the embedded channels to deform, which will degrade the efficiency of fluid flow through the channels. Alternatively, low temperatures and/or pressures result in undeformed channels but weakly bonded foils. This causes failure of the device due to fluid leakage. Thus, a processing envelope exists for producing a sound device with no fluid leakage and no degradation of fluid flow properties. The theoretical limit on aspect ratio within two-fluid counter-flow microchannel heat exchangers was also investigated. A counter-flow device is comprised of alternating layers of microchannels, which allow the two fluids to flow in opposite directions separated by fins. A theoretical model for interpreting the span of the fin as a function of the fin thickness was established. The model was verified experimentally by fabricating specimens to simulate the counter-flow device. The results of these investigations were used to aid in the design and processing of prototype microchannel devices.

Alman, David E.; Wilson, Rick D.

2001-09-01T23:59:59.000Z

285

WIPP - Public Reading Facilities  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLasDelivered energy consumption byAbout Printable Version Bookmark and Wind FOIA Public Reading

286

Optoelectronic ally automated system for carbon nanotubes synthesis via arc-discharge in solution  

SciTech Connect (OSTI)

The method of arc discharge in the solution is unique and inexpensive route for synthesis of the carbon nanotubes (CNTs), carbon onions, and other carbon nanostructures. Such a method can be used for in situ synthesis of CNTs decorated with nanoparticles. Herein, we report a simple and inexpensive optoelectronically automated system for arc discharge in solution synthesis of CNTs. The optoelectronic system maintains a constant gap between the two electrodes allowing a continuous synthesis of the carbon nanostructures. The system operates in a feedback loop consisting of an electrode-gap detector and an analog electronic unit, as controller. This computerized feeding system of the anode was used for in situ nanoparticles incorporated CNTs. For example, we have successfully decorated CNTs with ceria, silica, and palladium nanoparticles. Characterizations of nanostructures are performed using high-resolution transmission electron microscopy, scanning transmission electron microscopy, energy dispersive spectroscopy, and scanning electron microscopy.

Bera, Debasis; Brinley, Erik; Kuiry, Suresh C.; McCutchen, Matthew; Seal, Sudipta; Heinrich, Helge; Kabes, Bradley [Surface Engineering and Nanotechnology Facility - SNF, Advanced Materials Processing and Analysis Center - AMPAC, and Mechanical, Materials and Aerospace Engineering - MMAE, University of Central Florida - UCF, 4000 Central Florida Blvd., Eng 1, no. 381, Orlando, Florida 32816 (United States); Advanced Materials Processing and Analysis Center - AMPAC and Department of Physics, University of Central Florida, 4000 Central Florida Blvd., Eng 1, no. 381, Orlando, Florida 32816 (United States); NSF REU Site (UCF), Department of Chemical Engineering, University of Minnesota, Duluth, Minnesota 55803 (United States)

2005-03-01T23:59:59.000Z

287

Fabrication of wideband optoelectronic differential amplifier using a balanced receiver on a semi-insulating GaAs substrate  

E-Print Network [OSTI]

FABRICATION OF WIDEBAND OPTOELECTRONIC DIFFERENTIAL AMPLIFIER USING A BALANCED RECEIVER ON A SEMI-INSULATING GAAS SUBSTRATE A Thesis by KYOO NAM CHOI Submitted to the Office of Graduate Studies of Texas ARM University in partial fulfillment... of the requirements for the degree of MASTER OF SCIENCE December 1989 Major Subject: Electrical Engineering FABRICATION Ol' WIDEBAND OPTOELECTRONIC DIFFERENTIAL A1VIPLIFIER USING A BAI, ANCED RECEIVER ON A SEMI. INSULATING GAAS SUBSTRATE A Thesis by l(YOO NAM...

Choi, Kyoo Nam

1989-01-01T23:59:59.000Z

288

Erasure of Time Delay Signatures in the Output of an Optoelectronic Feedback Laser with Modulated Delays and Chaos Synchronization  

E-Print Network [OSTI]

By studying the autocorrelation function of the optoelectronic feedback semiconductor laser output we establish that the signatures of time delays can be erased in systems incorporating modulated feedback time delays. This property is of importance for the suitability of such laser systems for secure chaos-based communication systems. We also make the first report on chaos synchronization in both unidirectionally and bidirectionally coupled multiple time delay chaotic semiconductor lasers with modulated optoelectronic feedbacks.

E. M. Shahverdiev; K. A. Shore

2009-06-17T23:59:59.000Z

289

Non-invasive optoelectronic system for measurement of electrostatic discharge (ESD) induced phenomena  

SciTech Connect (OSTI)

The design of a high speed optoelectronic system consisting of an electrically floating detector/transmitter module, coupled to a receiver by a fiber optic link, is described. Typical applications of this optical decoupled system, involving electrostatic discharge (ESD), are described. These include: the optical signature characterization of discharges, and the measurement of conducted and radiated electromagnetic interference (EMI) due to ESD. Results of experiments conducted to demonstrate the qualitative performance characteristics of the measurement system are presented.

Greason, W.D.; Kucerovsky, Z.; Bulach, S.; Flatley, M.W. [Univ. of Western Ontario, London, Ontario (Canada). Dept. of Electrical Engineering

1995-12-31T23:59:59.000Z

290

Reading Acquisition, Developmental Dyslexia, and Skilled Reading Across Languages: A Psycholinguistic Grain Size Theory  

E-Print Network [OSTI]

Reading Acquisition, Developmental Dyslexia, and Skilled Reading Across Languages representations and accompanying differences in developmental reading strategies and the manifestation of dyslexia

Port, Robert

291

Detection device  

DOE Patents [OSTI]

The present invention is directed to a detection device comprising: (1) an entrance chamber; (2) a central chamber; and (3) an exit chamber. The central chamber includes an ionizing gas, anode, and means for connecting the anode with an external power supply and pulse counter.

Smith, J.E.

1981-02-27T23:59:59.000Z

292

Electrochemical device  

DOE Patents [OSTI]

A tunnel protected electrochemical device features channels fluidically communicating between manifold, tunnels and cells. The channels are designed to provide the most efficient use of auxiliary power. The channels have a greater hydraulic pressure drop and electrical resistance than the manifold. This will provide a design with the optimum auxiliary energy requirements.

Grimes, Patrick G. (Westfield, NJ); Einstein, Harry (Springfield, NJ); Bellows, Richard J. (Westfield, NJ)

1988-01-12T23:59:59.000Z

293

Applications of Robust, Radiation Hard AlGaN Optoelectronic Devices in Space Exploration and High Energy Density Physics  

SciTech Connect (OSTI)

This slide show presents: space exploration applications; high energy density physics applications; UV LED and photodiode radiation hardness; UV LED and photodiode space qualification; UV LED AC charge management; and UV LED satellite payload instruments. A UV LED satellite will be launched 2nd half 2012.

Sun, K.

2011-05-04T23:59:59.000Z

294

Large grain Ge growth on amorphous substrates for CMOS back-end-of-line integration of active optoelectronic devices  

E-Print Network [OSTI]

The electronic-photonic integrated circuit (EPIC) has emerged as a leading technology to surpass the interconnect bottlenecks that threaten to limit the progress of Moore's Law in microprocessors. Compared to conventional ...

Pearson, Brian (Brian Sung-Il)

2012-01-01T23:59:59.000Z

295

Laser device  

DOE Patents [OSTI]

A laser device includes a virtual source configured to aim laser energy that originates from a true source. The virtual source has a vertical rotational axis during vertical motion of the virtual source and the vertical axis passes through an exit point from which the laser energy emanates independent of virtual source position. The emanating laser energy is collinear with an orientation line. The laser device includes a virtual source manipulation mechanism that positions the virtual source. The manipulation mechanism has a center of lateral pivot approximately coincident with a lateral index and a center of vertical pivot approximately coincident with a vertical index. The vertical index and lateral index intersect at an index origin. The virtual source and manipulation mechanism auto align the orientation line through the index origin during virtual source motion.

Scott, Jill R. (Idaho Falls, ID); Tremblay, Paul L. (Idaho Falls, ID)

2008-08-19T23:59:59.000Z

296

Mobile Device Guide Google Android based devices  

E-Print Network [OSTI]

Mobile Device Guide ­ Google Android based devices CSUF Date Last Revised: 1/20/11 Page 1 of 3;Mobile Device Guide ­ Google Android based devices CSUF Date Last Revised: 1/20/11 Page 2 of 3 2. Under' with your campus username and enter your password (case sensitive). 4. Tap `next'. #12;Mobile Device Guide

de Lijser, Peter

297

International House Collection / Stanley Read (collector)  

E-Print Network [OSTI]

International House Collection / Stanley Read (collector) Revised by Erwin Wodarczak (2010 (collector). - 1953-1955. 2 cm of textual records. Biographical Sketch Born in Quebec, Stanley Read earned

Handy, Todd C.

298

Electrochromic device  

DOE Patents [OSTI]

An electrochromic device includes a first substrate spaced from a second substrate. A first conductive member is formed over at least a portion of the first substrate. A first electrochromic material is formed over at least a portion of the first conductive member. The first electrochromic material includes an organic material. A second conductive member is formed over at least a portion of the second substrate. A second electrochromic material is formed over at least a portion of the second conductive member. The second electrochromic material includes an inorganic material. An ionic liquid is positioned between the first electrochromic material and the second electrochromic material.

Schwendemanm, Irina G. (Wexford, PA); Polcyn, Adam D. (Pittsburgh, PA); Finley, James J. (Pittsburgh, PA); Boykin, Cheri M. (Kingsport, TN); Knowles, Julianna M. (Apollo, PA)

2011-03-15T23:59:59.000Z

299

OLED devices  

DOE Patents [OSTI]

An OLED device having an emission layer formed of an ambipolar phosphine oxide host material and a dopant, a hole transport layer in electrical communication with an anode, an electron transport layer in communication with a cathode, wherein the HOMO energy of the hole transport layer is substantially the same as the HOMO energy of the ambipolar host in the emission layer, and the LUMO energy of the electron transport layer is substantially the same as the LUMO energy of the ambipolar host in the emission layer.

Sapochak, Linda Susan [Arlington, VA; Burrows, Paul Edward [Kennewick, WA; Bimalchandra, Asanga [Richland, WA

2011-02-22T23:59:59.000Z

300

Diversionary device  

DOE Patents [OSTI]

A diversionary device has a housing having at least one opening and containing a non-explosive propellant and a quantity of fine powder packed within the housing, with the powder being located between the propellant and the opening. When the propellant is activated, it has sufficient energy to propel the powder through the opening to produce a cloud of powder outside the housing. An igniter is also provided for igniting the cloud of powder to create a diversionary flash and bang, but at a low enough pressure to avoid injuring nearby people.

Grubelich, Mark C. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Design of 4-electrode optical device for application of vector electric fields to self-assembled quantum dot complexes  

SciTech Connect (OSTI)

Self-assembled InAs quantum dots (QDs) are of great interest as components of optoelectronic devices that can operate at the quantum limit. The charge configuration, interdot coupling, and symmetry of complexes containing multiple QDs can all be tuned with applied electric fields, but the magnitude and angle of the electric field required to control each of these parameters depend on the orientation of the QD complex. We present a 4-electrode device compatible with optical excitation and emission that allows application of electric fields with arbitrary magnitudes and angles relative to isolated QD complexes. We demonstrate the electric field tunability of this device with numerical simulations.

Zhou, Xinran; Doty, Matthew, E-mail: doty@udel.edu [University of Delaware, Newark, Delaware 19716 (United States)

2014-10-28T23:59:59.000Z

302

Charge separation dynamics and opto-electronic properties of a diaminoterephthalate- C 60 diad  

E-Print Network [OSTI]

A novel diad composed of a diaminoterephthalate scaffold, covalently linked to a Fullerene derivative, is explored as a nanosized charge separation unit powered by solar energy. Its opto-electronic properties are studied and the charge separation rate is determined. Simulations of the coupled electronic and nuclear dynamics in the Ehrenfest approximation are carried out ona sub 100 fs time scale after photoexcitation in order to gain insights about the mechanisms driving the the charge separation. In particular, the role of vibronic coupling and of the detailed morphology are highlighted.

Pittalis, Stefano; Robin, Jrg; Freimuth, Lena; Christoffers, Jens; Rozzi, Christoph Lienaua nd Carlo Andrea

2014-01-01T23:59:59.000Z

303

Experimental Observations of Group Synchrony in a System of Chaotic Optoelectronic Oscillators  

E-Print Network [OSTI]

We experimentally demonstrate group synchrony in a network of four nonlinear optoelectronic oscillators with time-delayed coupling. We divide the nodes into two groups of two each, by giving each group different parameters and by enabling only inter-group coupling. When coupled in this fashion, the two groups display different dynamics, with no isochronal synchrony between them, but the nodes in a single group are isochronally synchronized, even though there is no intra-group coupling. We compare experimental behavior with theoretical and numerical results.

Caitlin R. S. Williams; Thomas E. Murphy; Rajarshi Roy; Francesco Sorrentino; Thomas Dahms; Eckehard Schll

2013-03-27T23:59:59.000Z

304

Mathematical Modeling of Semiconductor Devices  

E-Print Network [OSTI]

fibers. Optoelectronic emitters convert an electronic signal into light. Examples are light-emitting diodes (LED) used in displays and indication lambs and semiconductor lasers used in compact disk systems

Jngel, Ansgar

305

Interconnector device  

SciTech Connect (OSTI)

This patent describes an interconnector device that allows a lithium-type battery to be substituted for a Leclanche battery. The Leclanche battery is of predetermined dimensions and has a pair of coil spring connection terminals at predetermined locations on the top surface thereof. The lithium battery of different predetermined dimensions than the Lechanche battery and has a pair of female connection sockets positioned at a predetermined off-center location on the top surface. The locations of the coil spring terminals and the connection sockets of the respective batteries are at substantially different non-matching positions, comprising a thin flat water of non-conducive material of predetermined size and configuration, the wafer having the same cross-section dimensions as the Leclanche battery. A pair of prongs on the underside surface of the wafer and at locations correspond to the locations of the female connection sockets of the lithium battery. The prongs received into the female connection sockets when the interconnector device is mounted on the lithium batter. A pair of coil spring connection terminals mounted on the opposite of top surface of the wafer and having a configuration which matches that of the connection terminals of the Leclanche battery and positioned at locations which corresponds to the locations of the coil spring connection terminals of the Leclanche battery. A pair of electrical conductors plated on the underside surface of the wafer for respectively interconnecting the pairs of prongs and the pair of coil spring connection terminals in parallel.

Christopulos, J.A.

1987-07-07T23:59:59.000Z

306

Control device for vehicle speed  

SciTech Connect (OSTI)

This patent describes a control device for vehicle speed comprising: a throttle driving means operatively coupled to a throttle valve of a vehicle; a set switch means for commanding memorization of the vehicle speed; a resume switch means for commanding read of the vehicle speed; a vehicle speed detecting means for generating a signal in accordance with the vehicle speed; a vehicle speed memory; an electronical control means for memorizing in the vehicle speed memory vehicle speed information corresponding to the signal obtained from the vehicle speed detecting means in response to actuation of the set switch means. The control means is also for reading out the content of the vehicle speed memory in response to actuation of the resume switch means to control the throttle driving means in accordance with the read-out content; a power supply means for supplying power to the electronical control means; and a power supply control switch means for controlling supply of power to the electronical control means in response to the state of at least one of the set switch means and the resume switch means and the state of the electronical control means. The improvement described here comprises the electronical control means sets the power supply control switch means into such a state that supply of power to the electronical control means is turned OFF, when vehicle speed information is not memorized in the vehicle speed memory.

Kawata, S.; Hyodo, H.

1987-03-03T23:59:59.000Z

307

Method of forming crystalline silicon devices on glass  

DOE Patents [OSTI]

A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

McCarthy, A.M.

1995-03-21T23:59:59.000Z

308

Method of forming crystalline silicon devices on glass  

DOE Patents [OSTI]

A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

McCarthy, Anthony M. (Menlo Park, CA)

1995-01-01T23:59:59.000Z

309

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 10, NO. 3, MAY/JUNE 2004 445 Model-Based Optoelectronic Packaging Automation  

E-Print Network [OSTI]

-Based Optoelectronic Packaging Automation Timothy P. Kurzweg, Member, IEEE, Allon Guez, and Shubham K. Bhat Abstract--In this paper, we present an automation technique that yields high-performance, low-cost optoelectronic of the automation system. In addition to this feed-forward model, the controller is designed with feed- back

Kurzweg, Timothy P.

310

On-chip high speed localized cooling using superlattice microrefrigerators  

E-Print Network [OSTI]

cooling, microrefrigerators, optoelectronics, superlattice,in high power, high-speed optoelectronics devices, and

Zhang, Y; Christofferson, J; Shakouri, A; Zeng, G H; Bowers, J E; Croke, E T

2006-01-01T23:59:59.000Z

311

Laser device  

DOE Patents [OSTI]

A laser device includes a target position, an optical component separated a distance J from the target position, and a laser energy source separated a distance H from the optical component, distance H being greater than distance J. A laser source manipulation mechanism exhibits a mechanical resolution of positioning the laser source. The mechanical resolution is less than a spatial resolution of laser energy at the target position as directed through the optical component. A vertical and a lateral index that intersect at an origin can be defined for the optical component. The manipulation mechanism can auto align laser aim through the origin during laser source motion. The laser source manipulation mechanism can include a mechanical index. The mechanical index can include a pivot point for laser source lateral motion and a reference point for laser source vertical motion. The target position can be located within an adverse environment including at least one of a high magnetic field, a vacuum system, a high pressure system, and a hazardous zone. The laser source and an electro-mechanical part of the manipulation mechanism can be located outside the adverse environment. The manipulation mechanism can include a Peaucellier linkage.

Scott, Jill R. (Idaho Falls, ID); Tremblay, Paul L. (Idaho Falls, ID)

2007-07-10T23:59:59.000Z

312

Brain Bases of Reading Fluency in Typical Reading and Impaired Fluency in Dyslexia  

E-Print Network [OSTI]

Although the neural systems supporting single word reading are well studied, there are limited direct comparisons between typical and dyslexic readers of the neural correlates of reading fluency. Reading fluency deficits ...

Christodoulou, Joanna

313

Medical Device Reliability BIOMATERIALS  

E-Print Network [OSTI]

NEMI Medical Electronics team to address short- and long-term reliability issues with medical devices. OurMedical Device Reliability BIOMATERIALS Our goal is to provide medical device manufacturers, and consistency of active implantable medical devices. These devices, including pacemakers, cardiac defibrillators

314

Connector device for building integrated photovoltaic device  

SciTech Connect (OSTI)

The present invention is premised upon a connector device and method that can more easily electrically connect a plurality of PV devices or photovoltaic system components and/or locate these devices/components upon a building structure. It also may optionally provide some additional sub-components (e.g. at least one bypass diode and/or an indicator means) and may enhance the serviceability of the device.

Keenihan, James R.; Langmaid, Joseph A.; Eurich, Gerald K.; Lesniak, Michael J.; Mazor, Michael H.; Cleereman, Robert J.; Gaston, Ryan S.

2014-06-03T23:59:59.000Z

315

Operated device estimation framework  

E-Print Network [OSTI]

Protective device estimation is a challenging task because there are numerous protective devices present in a typical distribution system. Among various protective devices, auto-reclosers and fuses are the main overcurrent protection on distribution...

Rengarajan, Janarthanan

2009-05-15T23:59:59.000Z

316

Simulation of nanostructure-based and ultra-thin film solar cell devices beyond the classical picture  

E-Print Network [OSTI]

In this paper, an optoelectronic device simulation framework valid for arbitrary spatial variation of electronic potentials and optical modes, and for transport regimes ranging from ballistic to diffusive, is used to study non-local photon absorption, photocurrent generation and carrier extraction in ultra-thin film and nanostructure-based solar cell devices at the radiative limit. Among the effects that are revealed by the microscopic approach and which are inaccessible to macroscopic models is the impact of structure, doping or bias induced nanoscale potential variations on the local photogeneration rate and the photocarrier transport regime.

Aeberhard, Urs

2014-01-01T23:59:59.000Z

317

Module 4Module 4 CPU SchedulingCPU Scheduling Reading: Chapter 5Reading: Chapter 5Reading: Chapter 5Reading: Chapter 5  

E-Print Network [OSTI]

to execute, and then give the control to it If we want efficient resource utilization, we need CPU scheduling preemptive scheduling? DispatcherDispatcher Dispatcher module gives control of the CPU to the process1 Module 4Module 4 ­­ CPU SchedulingCPU Scheduling Reading: Chapter 5Reading: Chapter 5Reading

Stojmenovic, Ivan

318

Assistive listening devices drive neuroplasticity in children with dyslexia  

E-Print Network [OSTI]

Assistive listening devices drive neuroplasticity in children with dyslexia Jane Hornickela Jolla, CA, and approved August 3, 2012 (received for review April 23, 2012) Children with dyslexia often on auditory neurophysiology and reading skills in children with dyslexia. FM system use reduced

319

Carbon Based Nano-Materials Research, Development and Applications in Optoelectronics  

E-Print Network [OSTI]

G. Printable Thin Film Supercapacitors Using Single-Walledemission devices and supercapacitors. Figure 1.13: SEM imageas electrodes for supercapacitors, fuel cells, and battery

Wang, Feihu

2012-01-01T23:59:59.000Z

320

Read  

E-Print Network [OSTI]

Iycamo frwl , .... h!ottI$. WMeh .... III ,... ..... ,..nIl -Thn ... rnony.11fIIII1 I hMl_ a11111. ~ by ~ Sir'lgh and Mark Thly, ond I """" rd wrtt t .. 'GhorrQ. PaiWwu' by D" nLllh C_ GIUIam. WNch ...... _IIII,... ... III,... __ 111 ___ 18 ,-, Th...

Fineprint Bookclub

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Polynomial law for controlling the generation of n-scroll chaotic attractors in an optoelectronic delayed oscillator  

E-Print Network [OSTI]

Controlled transitions between a hierarchy of n-scroll attractors are investigated in a nonlinear optoelectronic oscillator. Using the system's feedback strength as a control parameter, it is shown experimentally the transition from Van der Pol-like attractors to 6-scroll, but in general, this scheme can produce an arbitrary number of scrolls. The complexity of every state is characterized by Lyapunov exponents and autocorrelation coefficients.

Bicky A. Mrquez; Jos J. Surez-Vargas; Javier A. Ramrez

2014-08-23T23:59:59.000Z

322

Polynomial law for controlling the generation of n-scroll chaotic attractors in an optoelectronic delayed oscillator  

E-Print Network [OSTI]

Controlled transitions between a hierarchy of n-scroll attractors are investigated in a nonlinear optoelectronic oscillator. Using the system's feedback strength as a control parameter, it is shown experimentally the transition from Van der Pol-like attractors to 6-scroll, but in general, this scheme can produce an arbitrary number of scrolls. The complexity of every state is characterized by Lyapunov exponents and autocorrelation coefficients.

Mrquez, Bicky A; Ramrez, Javier A

2014-01-01T23:59:59.000Z

323

Image display device in digital TV  

DOE Patents [OSTI]

Disclosed is an image display device in a digital TV that is capable of carrying out the conversion into various kinds of resolution by using single bit map data in the digital TV. The image display device includes: a data processing part for executing bit map conversion, compression, restoration and format-conversion for text data; a memory for storing the bit map data obtained according to the bit map conversion and compression in the data processing part and image data inputted from an arbitrary receiving part, the receiving part receiving one of digital image data and analog image data; an image outputting part for reading the image data from the memory; and a display processing part for mixing the image data read from the image outputting part and the bit map data converted in format from the a data processing part. Therefore, the image display device according to the present invention can convert text data in such a manner as to correspond with various resolution, carry out the compression for bit map data, thereby reducing the memory space, and support text data of an HTML format, thereby providing the image with the text data of various shapes.

Choi, Seung Jong (Seoul, KR)

2006-07-18T23:59:59.000Z

324

Reading File Bonneville Power Administration  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 -the Mid-Infrared at 278, 298, andEpidermalOxide Fuel CellsReaction ofReading File

325

Bipolar thermoelectric devices  

E-Print Network [OSTI]

The work presented here is a theoretical and experimental study of heat production and transport in bipolar electrical devices, with detailed treatment of thermoelectric effects. Both homojunction and heterojunction devices ...

Pipe, Kevin P. (Kevin Patrick), 1976-

2004-01-01T23:59:59.000Z

326

Pulse flux measuring device  

DOE Patents [OSTI]

A device for measuring particle flux comprises first and second photodiode detectors for receiving flux from a source and first and second outputs for producing first and second signals representing the flux incident to the detectors. The device is capable of reducing the first output signal by a portion of the second output signal, thereby enhancing the accuracy of the device. Devices in accordance with the invention may measure distinct components of flux from a single source or fluxes from several sources.

Riggan, William C. (Albuquerque, NM)

1985-01-01T23:59:59.000Z

327

Pulse detecting device  

DOE Patents [OSTI]

A device for measuring particle flux comprises first and second photodiode detectors for receiving flux from a source and first and second outputs for producing first and second signals representing the flux incident to the detectors. The device is capable of reducing the first output signal by a portion of the second output signal, thereby enhancing the accuracy of the device. Devices in accordance with the invention may measure distinct components of flux from a single source or fluxes from several sources.

Riggan, W.C.

1984-01-01T23:59:59.000Z

328

Contracting with reading costs and renegotiation costs  

E-Print Network [OSTI]

OF CALIFORNIA, SAN DIEGO Contracting with Reading Costs andrents, and the competitive contracting process. Journal ofReiche. Foundation of incomplete contracting in a model of

Brennan, James R.

2007-01-01T23:59:59.000Z

329

Articulating feedstock delivery device  

DOE Patents [OSTI]

A fully articulable feedstock delivery device that is designed to operate at pressure and temperature extremes. The device incorporates an articulating ball assembly which allows for more accurate delivery of the feedstock to a target location. The device is suitable for a variety of applications including, but not limited to, delivery of feedstock to a high-pressure reaction chamber or process zone.

Jordan, Kevin

2013-11-05T23:59:59.000Z

330

Amorphous silicon photovoltaic devices  

DOE Patents [OSTI]

This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

2004-08-31T23:59:59.000Z

331

INFORMATION DEVICES AND  

E-Print Network [OSTI]

to access or hold sensitive, confidential or personal information on mobile devices, such as laptopsPROTECTION OF INFORMATION HELD ON MOBILE DEVICES AND ENCRYPTION POLICY (V3.5) the place of useful;Protection of Information Held on Mobile Devices and Encryption Policy (v3.5) Page 1 Table of Contents 1

Mottram, Nigel

332

MEASURING THE READING ABILITY OF INCOMING FRESHMEN: A PATH ANALYSIS INVESTIGATION INTO READING COMPREHENSION  

E-Print Network [OSTI]

Reading is a complex process involving numerous skills and abilities contributing to acquiring meaning from text. Individuals without the requisite reading skills will have difficulty not only in school but throughout their ...

Schuster, Jonathan

2012-05-31T23:59:59.000Z

333

Tracking Reading: Dual Task Costs of Oral Reading for Young Versus Older Adults  

E-Print Network [OSTI]

A digital pursuit rotor was used to monitor oral reading costs by time-locking tracking performance to the auditory wave form produced as young and older adults were reading out short paragraphs. Multilevel modeling was ...

Kemper, Susan; Bontempo, Daniel; Schmalzried, RaLynn Cheri; McKedy, Whitney; Tagliaferri, Bruno; Kieweg, Doug

2014-02-01T23:59:59.000Z

334

Title Author(s) Year Published Category Analysis and Design of Analog Integrated Circuits, Third Edition Gray; Meyer 1993 Circuits  

E-Print Network [OSTI]

Optics Terahertz Optoelectronics Sakai 2005 Optics / Laser Optics Advanced Optoelectronic Devices Dragoman; Dragoman 1999 Optoelectronic Devices / Packaging Optical Integrated Circuits Nishihara; Haruna; Suhara 1989 Optoelectronic Devices / Packaging Optical Networks, Second Edition Ramaswami; Sivarajan 2002

Huang, Zhaoran "Rena"

335

Power consumption monitoring using additional monitoring device  

SciTech Connect (OSTI)

Today, emphasis is placed on reducing power consumption. Computers are large consumers; therefore it is important to know the total consumption of computing systems. Since their optimal functioning requires quite strict environmental conditions, without much variation in temperature and humidity, reducing energy consumption cannot be made without monitoring environmental parameters. Thus, the present work uses a multifunctional electric meter UPT 210 for power consumption monitoring. Two applications were developed: software which carries meter readings provided by electronic and programming facilitates remote device and a device for temperature monitoring and control. Following temperature variations that occur both in the cooling system, as well as the ambient, can reduce energy consumption. For this purpose, some air conditioning units or some computers are stopped in different time slots. These intervals were set so that the economy is high, but the work's Datacenter is not disturbed.

Tru?c?, M. R. C., E-mail: radu.trusca@itim-cj.ro; Albert, ?., E-mail: radu.trusca@itim-cj.ro; Tudoran, C., E-mail: radu.trusca@itim-cj.ro; Soran, M. L., E-mail: radu.trusca@itim-cj.ro; F?rca?, F., E-mail: radu.trusca@itim-cj.ro [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath, 400293 Cluj-Napoca (Romania); Abrudean, M. [Technical University of Cluj-Napoca, Cluj-Napoca (Romania)] [Technical University of Cluj-Napoca, Cluj-Napoca (Romania)

2013-11-13T23:59:59.000Z

336

Memory device using movement of protons  

DOE Patents [OSTI]

An electrically written memory element is disclosed utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element. 19 figs.

Warren, W.L.; Vanheusden, K.J.R.; Fleetwood, D.M.; Devine, R.A.B.

1998-11-03T23:59:59.000Z

337

Memory device using movement of protons  

DOE Patents [OSTI]

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

Warren, William L. (Albuquerque, NM); Vanheusden, Karel J. R. (Albuquerque, NM); Fleetwood, Daniel M. (Albuquerque, NM); Devine, Roderick A. B. (St. Martin le Vinoux, FR)

2000-01-01T23:59:59.000Z

338

Portable data collection device  

DOE Patents [OSTI]

The present invention provides a portable data collection device that has a variety of sensors that are interchangeable with a variety of input ports in the device. The various sensors include a data identification feature that provides information to the device regarding the type of physical data produced by each sensor and therefore the type of sensor itself. The data identification feature enables the device to locate the input port where the sensor is connected and self adjust when a sensor is removed or replaced. The device is able to collect physical data, whether or not a function of a time.

French, Patrick D. (Aurora, CO)

1996-01-01T23:59:59.000Z

339

Unitary lens semiconductor device  

DOE Patents [OSTI]

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Lear, Kevin L. (Albuquerque, NM)

1997-01-01T23:59:59.000Z

340

Portable data collection device  

DOE Patents [OSTI]

The present invention provides a portable data collection device that has a variety of sensors that are interchangeable with a variety of input ports in the device. The various sensors include a data identification feature that provides information to the device regarding the type of physical data produced by each sensor and therefore the type of sensor itself. The data identification feature enables the device to locate the input port where the sensor is connected and self adjust when a sensor is removed or replaced. The device is able to collect physical data, whether or not a function of a time. 7 figs.

French, P.D.

1996-06-11T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Apparatus And Method Of Using Flexible Printed Circuit Board In Optical Transceiver Device  

DOE Patents [OSTI]

This invention relates to a flexible printed circuit board that is used in connection with an optical transmitter, receiver or transceiver module. In one embodiment, the flexible printed circuit board has flexible metal layers in between flexible insulating layers, and the circuit board comprises: (1) a main body region orientated in a first direction having at least one electrical or optoelectronic device; (2) a plurality of electrical contact pads integrated into the main body region, where the electrical contact pads function to connect the flexible printed circuit board to an external environment; (3) a buckle region extending from one end of the main body region; and (4) a head region extending from one end of the buckle region, and where the head region is orientated so that it is at an angle relative to the direction of the main body region. The electrical contact pads may be ball grid arrays, solder balls or land-grid arrays, and they function to connect the circuit board to an external environment. A driver or amplifier chip may be adapted to the head region of the flexible printed circuit board. In another embodiment, a heat spreader passes along a surface of the head region of the flexible printed circuit board, and a window is formed in the head region of the flexible printed circuit board. Optoelectronic devices are adapted to the head spreader in such a manner that they are accessible through the window in the flexible printed circuit board.

Anderson, Gene R. (Albuquerque, NM); Armendariz, Marcelino G. (Albuquerque, NM); Bryan, Robert P. (Albuquerque, NM); Carson, Richard F. (Albuquerque, NM); Duckett, III, Edwin B. (Albuquerque, NM); McCormick, Frederick B. (Albuquerque, NM); Peterson, David W. (Sandia Park, NM); Peterson, Gary D. (Albuquerque, NM); Reysen, Bill H. (Lafayette, CO)

2005-03-15T23:59:59.000Z

342

Controlled growth of larger heterojunction interface area for organic photosensitive devices  

DOE Patents [OSTI]

An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.

Yang, Fan (Somerset, NJ); Forrest, Stephen R. (Ann Arbor, MI)

2009-12-29T23:59:59.000Z

343

Reading for Thursday Emissions scenario summary  

E-Print Network [OSTI]

emissions, for year 2000 #12;USA ­ CO2 emissions from fossil fuel combustion (2005) US EPA #12;#12;#12;Decreasing 13C strongly suggests that the source of atmospheric CO2 is fossil carbon #12;Line of evidence #1Reading for Thursday · Emissions scenario summary: ­ Read pages 3-6 · IPCC Chapter 11 (Regional

Schweik, Charles M.

344

Mobile Device Guide Apple iPhone Devices  

E-Print Network [OSTI]

Mobile Device Guide ­ Apple iPhone Devices CSUF Date Last Revised: 1/20/11 Page 1 of 3 ConnectingPhone desktop. 1a. Expand `Mail, Contacts, Calendars' as shown. #12;Mobile Device Guide ­ Apple iPhone Devices (case sensitive). 4. Tap `next'. #12;Mobile Device Guide ­ Apple iPhone Devices CSUF Date Last Revised

de Lijser, Peter

345

Barrier breaching device  

DOE Patents [OSTI]

A barrier breaching device that is designed primarily for opening holes in interior walls of buildings uses detonating fuse for explosive force. The fuse acts as the ribs or spokes of an umbrella-like device that may be opened up to form a cone. The cone is placed against the wall so that detonating fuse that rings the base of the device and which is ignited by the spoke-like fuses serves to cut a circular hole in the wall.

Honodel, Charles A. (Tracy, CA)

1985-01-01T23:59:59.000Z

346

Barrier breaching device  

DOE Patents [OSTI]

A barrier breaching device that is designed primarily for opening holes in interior walls of buildings uses detonating fuse for explosive force. The fuse acts as the ribs or spokes of an umbrella-like device that may be opened up to form a cone. The cone is placed against the wall so that detonating fuse that rings the base of the device and which is ignited by the spoke-like fuses serves to cut a circular hole in the wall.

Honodel, C.A.

1983-06-01T23:59:59.000Z

347

Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications  

DOE Patents [OSTI]

Disclosed is an illumination source comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

Tam, S.W.

1997-02-25T23:59:59.000Z

348

Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications  

DOE Patents [OSTI]

An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

Tam, Shiu-Wing (Downers Grove, IL)

1997-01-01T23:59:59.000Z

349

Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications  

DOE Patents [OSTI]

An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon.

Tam, Shiu-Wing (Downers Grove, IL)

1998-01-01T23:59:59.000Z

350

Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications  

DOE Patents [OSTI]

An illumination source is disclosed comprising a porous silicon having a source of electrons on the surface and/or interstices thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photovoltaic device and an illumination source of tritiated porous silicon. 1 fig.

Tam, S.W.

1998-06-16T23:59:59.000Z

351

The Effects of Rhetorical Reading Interventions on the Reading and Writing Performances of Students Enrolled in College Composition Classes  

E-Print Network [OSTI]

-experimental comparison and treatment group post test design that included four composition classes. The independent variable was the rhetorical reading intervention. The dependent variables included: student reading- writing connection surveys, the Accuplacer Reading...

Sanchez, Bernice Y.

2011-02-22T23:59:59.000Z

352

Man's Best Friend as a Reading Facilitator  

E-Print Network [OSTI]

and fuzzy program (Friesen, 2009). Small-scale studies of R.E.A.D. have consistently shown that R.E.A.D. improves students reading skill and motivation (Heyer, 2007; Martin, 2001). Heyer (2007), who was enrolled in a masters program with an emphasis..., address sanitation concerns. Ninth, inform colleagues, staff and families about the program. Tenth, prepare children and staff with an informative session. Eleventh, plan for the dogs safety and well-being. Twelfth, decide how expansive the program...

Shaw, Donita J.

2013-01-01T23:59:59.000Z

353

Mobile Device Management Android Device Enrollment  

E-Print Network [OSTI]

to manage your device. c. Enter your password. #12;d. Accept the Terms and Conditions e. You have completed. 2. Get Touchdown from Google Play a. Open up the Google Play Store. b. Search for Touchdown. c. Use the application. #12;3. Get Citrix Mobile Connect from Google Play a. Open up the Google Play Store. b. Search

354

Grey man devices  

E-Print Network [OSTI]

The Vision Slaved to Walking Device i s one in a series of devices that are a result of the experimental ambulation series. The ability to see only when one's feet are moving allows for a distorted perspective of ones own ...

Sethi, Sanjit (Sanjit Singh), 1971-

2002-01-01T23:59:59.000Z

355

Capillary interconnect device  

DOE Patents [OSTI]

An interconnecting device for connecting a plurality of first fluid-bearing conduits to a corresponding plurality of second fluid-bearing conduits thereby providing fluid communication between the first fluid-bearing conduits and the second fluid-bearing conduits. The device includes a manifold and one or two ferrule plates that are held by compressive axial forces.

Renzi, Ronald F

2013-11-19T23:59:59.000Z

356

Self-actuated device  

DOE Patents [OSTI]

A self-actuated device, of particular use as a valve or an orifice for nuclear reactor fuel and blanket assemblies, in which a gas produced by a neutron induced nuclear reaction gradually accumulates as a function of neutron fluence. The gas pressure increase occasioned by such accumulation of gas is used to actuate the device.

Hecht, Samuel L. (Richland, WA)

1984-01-01T23:59:59.000Z

357

3.46 Photonic Materials and Devices, Spring 2004  

E-Print Network [OSTI]

Optical and optoelectronic properties of semiconductors, ceramics, and polymers. Electronic structure, refractive index, electroluminescence, electro-optic and magneto-optic effects, and laser phenomena. Microphotonic ...

Kimerling, Lionel C.

358

Fluidic nanotubes and devices  

DOE Patents [OSTI]

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Yang, Peidong (El Cerrito, CA); He, Rongrui (El Cerrito, CA); Goldberger, Joshua (Berkeley, CA); Fan, Rong (El Cerrito, CA); Wu, Yiying (Albany, CA); Li, Deyu (Albany, CA); Majumdar, Arun (Orinda, CA)

2010-01-10T23:59:59.000Z

359

Fluidic nanotubes and devices  

DOE Patents [OSTI]

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Yang, Peidong (Berkeley, CA); He, Rongrui (El Cerrito, CA); Goldberger, Joshua (Berkeley, CA); Fan, Rong (El Cerrito, CA); Wu, Yiying (Albany, CA); Li, Deyu (Albany, CA); Majumdar, Arun (Orinda, CA)

2008-04-08T23:59:59.000Z

360

Device for cutting protrusions  

DOE Patents [OSTI]

An apparatus for clipping a protrusion of material is provided. The protrusion may, for example, be a bolt head, a nut, a rivet, a weld bead, or a temporary assembly alignment tab protruding from a substrate surface of assembled components. The apparatus typically includes a cleaver having a cleaving edge and a cutting blade having a cutting edge. Generally, a mounting structure configured to confine the cleaver and the cutting blade and permit a range of relative movement between the cleaving edge and the cutting edge is provided. Also typically included is a power device coupled to the cutting blade. The power device is configured to move the cutting edge toward the cleaving edge. In some embodiments the power device is activated by a momentary switch. A retraction device is also generally provided, where the retraction device is configured to move the cutting edge away from the cleaving edge.

Bzorgi, Fariborz M. (Knoxville, TN)

2011-07-05T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Preprint of M. B. Yairi, C. W. Coldren, D. A. B. Miller, and J. S. Harris, Jr."High-Speed Quantum Well Optoelectronic Gate Based on Diffusive Conduction Recovery," in Optics in Computing '98, Pierre Chavel, David A. B. Miller, Hugo Thienpont,  

E-Print Network [OSTI]

Well Optoelectronic Gate Based on Diffusive Conduction Recovery," in Optics in Computing '98, Pierre-Speed Quantum Well Optoelectronic Gate Based on Diffusive Conduction Recovery M. B. Yairi, C. W. Coldren*, D. A-4085, USA *Solid State Laboratory, Stanford University Abstract A novel high-speed optoelectronic gate

Miller, David A. B.

362

De Novo Sequencing with Short Reads: Does the Read Length Matter? (2009 JGI User Meeting)  

ScienceCinema (OSTI)

Pavel Pevzner of UC San Diego spoke about "De Novo Sequencing with Short Reads" on March 26, 2009 during the 4th Annual User Meeting

Pezner, Pavel A

2011-04-25T23:59:59.000Z

363

Zinc Oxide Based Nonvolatile Memories and Random Lasers  

E-Print Network [OSTI]

2013). [41] 2010 Optoelectronics Market Report. Databeans,studied. The ZnO based optoelectronics devices are studiedmethods [7]. For many optoelectronics and microelectronics

Huang, Jian

2013-01-01T23:59:59.000Z

364

Stability and Transport of Novel Engineered Nanomaterials in Aqueous and Subsurface Environments  

E-Print Network [OSTI]

M. S. , Electronics and optoelectronics of two-dimensionalM. S. , Electronics and optoelectronics of two-dimensionalto be incorporated into optoelectronics devices (12). Other

Lanphere, Jacob Delano

2014-01-01T23:59:59.000Z

365

Conference 5739, SPIE International Symposium Integrated Optoelectronic Devices, 22-27 Jan 2005, San Jose, CA Development of high power green light emitting diode dies in  

E-Print Network [OSTI]

, San Jose, CA Development of high power green light emitting diode dies in piezoelectric Ga in green light emitting diodes is one of the big challenges towards all-solid- state lighting. The prime,3], and commercialization [4,5] of high brightness light emitting diodes LEDs has led to a 1.82 Billion-$/year world market

Wetzel, Christian M.

366

Rain sampling device  

DOE Patents [OSTI]

The present invention constitutes a rain sampling device adapted for independent operation at locations remote from the user which allows rainfall to be sampled in accordance with any schedule desired by the user. The rain sampling device includes a mechanism for directing wet precipitation into a chamber, a chamber for temporarily holding the precipitation during the process of collection, a valve mechanism for controllably releasing samples of the precipitation from the chamber, a means for distributing the samples released from the holding chamber into vessels adapted for permanently retaining these samples, and an electrical mechanism for regulating the operation of the device. 11 figures.

Nelson, D.A.; Tomich, S.D.; Glover, D.W.; Allen, E.V.; Hales, J.M.; Dana, M.T.

1991-05-14T23:59:59.000Z

367

Rain sampling device  

DOE Patents [OSTI]

The present invention constitutes a rain sampling device adapted for independent operation at locations remote from the user which allows rainfall to be sampled in accordance with any schedule desired by the user. The rain sampling device includes a mechanism for directing wet precipitation into a chamber, a chamber for temporarily holding the precipitation during the process of collection, a valve mechanism for controllably releasing samples of said precipitation from said chamber, a means for distributing the samples released from the holding chamber into vessels adapted for permanently retaining these samples, and an electrical mechanism for regulating the operation of the device.

Nelson, Danny A. (Richland, WA); Tomich, Stanley D. (Richland, WA); Glover, Donald W. (Prosser, WA); Allen, Errol V. (Benton City, WA); Hales, Jeremy M. (Kennewick, WA); Dana, Marshall T. (Richland, WA)

1991-01-01T23:59:59.000Z

368

Wireless device monitoring systems and monitoring devices, and associated methods  

DOE Patents [OSTI]

Wireless device monitoring systems and monitoring devices include a communications module for receiving wireless communications of a wireless device. Processing circuitry is coupled with the communications module and configured to process the wireless communications to determine whether the wireless device is authorized or unauthorized to be present at the monitored area based on identification information of the wireless device. Methods of monitoring for the presence and identity of wireless devices are also provided.

McCown, Steven H; Derr, Kurt W; Rohde, Kenneth W

2014-05-27T23:59:59.000Z

369

Instructions for using read_cips_file.sav to read CIPS data files Last updated 29 June 2011  

E-Print Network [OSTI]

Instructions for using read_cips_file.sav to read CIPS data files Last updated 29 June 2011 The file read_cips_file.sav is provided as a convenience for IDL users to read CIPS netcdf data files for levels 2 (orbit strips) and 3a (daily daisies). (1) Download the CIPS data files into a convenient

Mojzsis, Stephen J.

370

Electronic security device  

DOE Patents [OSTI]

The present invention relates to a security device having a control box containing an electronic system and a communications loop over which the system transmits a signal. The device is constructed so that the communications loop can extend from the control box across the boundary of a portal such as a door into a sealed enclosure into which access is restricted whereby the loop must be damaged or moved in order for an entry to be made into the enclosure. The device is adapted for detecting unauthorized entries into such enclosures such as rooms or containers and for recording the time at which such entries occur for later reference. Additionally, the device detects attempts to tamper or interfere with the operation of the device itself and records the time at which such events take place. In the preferred embodiment, the security device includes a microprocessor-based electronic system and a detection module capable of registering changes in the voltage and phase of the signal transmitted over the loop. 11 figs.

Eschbach, E.A.; LeBlanc, E.J.; Griffin, J.W.

1992-03-17T23:59:59.000Z

371

E-Print Network 3.0 - aquatic center photovoltaic Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to synthesize conjugated polymer composites for use in photovoltaic and optoelectronic devices Greenscale Center... , optoelectronics, polymer photovoltaics, and control...

372

Electrical apparatus lockout device  

SciTech Connect (OSTI)

A simple lockout device for electrical equipment equipped with recessed power blades is described. The device comprises a face-plate (12) having a threaded member (14) attached thereto and apertures suitable for accommodating the power blades of a piece of electrical equipment, an elastomeric nose (16) abutting the face-plate having a hole for passage of the threaded member therethrough and power blade apertures in registration with those of the face-plate, a block (20) having a recess (34) in its forward face for receiving at least a portion of the hose, a hole therein for receiving the threaded member and an integral extension (26) extending from its rear face. A thumb screw (22) suitable for turning with the hands and having internal threads suitable for engaging the threaded member attached to the face-plate is inserted into a passage in the integral extension to engage the threaded member in such a fashion that when the device is inserted over the recessed power blades of a piece of electrical equipment and the thumb screw (22) tightened, the elastomeric nose (16) is compressed between the face-plate (12) and the block (20) forcing it to expand laterally thereby securing the device in the recess and precluding the accidental or intentional energization of the piece of equipment by attachment of a power cord to the recessed power blades. Means are provided in the interval extension and the thumb screw for the attachment of a locking device (46) which will satisfy OSHA standards.

Gonzales, R.

1999-10-12T23:59:59.000Z

373

Electrical apparatus lockout device  

DOE Patents [OSTI]

A simple lockout device for electrical equipment equipped with recessed power blades is described. The device comprises a face-plate (12) having a threaded member (14) attached thereto and apertures suitable for accommodating the power blades of a piece of electrical equipment, an elastomeric nose (16) abutting the face-plate having a hole for passage of the threaded member therethrough and power blade apertures in registration with those of the face-plate, a block (20) having a recess (34) in its forward face for receiving at least a portion of the hose, a hole therein for receiving the threaded member and an integral extension (26) extending from its rear face. A thumb screw (22) suitable for turning with the hands and having internal threads suitable for engaging the threaded member attached to the face-plate is inserted into a passage in the integral extension to engage the threaded member in such a fashion that when the device is inserted over the recessed power blades of a piece of electrical equipment and the thumb screw (22) tightened, the elastomeric nose (16) is compressed between the face-plate (12) and the block (20) forcing it to expand laterally thereby securing the device in the recess and precluding the accidental or intentional energization of the piece of equipment by attachment of a power cord to the recessed power blades. Means are provided in the interval extension and the thumb screw for the attachment of a locking device (46) which will satisfy OSHA standards.

Gonzales, Rick (Chesapeake, VA)

1999-01-01T23:59:59.000Z

374

Spectral tailoring device  

DOE Patents [OSTI]

A spectral tailoring device for altering the neutron energy spectra and flux of neutrons in a fast reactor thereby selectively to enhance or inhibit the transmutation rate of a target metrical to form a product isotope. Neutron moderators, neutron filters, neutron absorbers and neutron reflectors may be used as spectral tailoring devices. Depending on the intended use for the device, a member from each of these four classes of materials could be used singularly, or in combination, to provide a preferred neutron energy spectra and flux of the neutrons in the region of the target material. In one embodiment of the invention, an assembly is provided for enhancing the production of isotopes, such as cobalt 60 and gadolinium 153. In another embodiment of the invention, a spectral tailoring device is disposed adjacent a target material which comprises long lived or volatile fission products and the device is used to shift the neutron energy spectra and flux of neutrons in the region of the fission products to preferentially transmute them to produce a less volatile fission product inventory. 6 figs.

Brager, H.R.; Schenter, R.E.; Carter, L.L.; Karnesky, R.A.

1987-08-05T23:59:59.000Z

375

Biochip scanner device  

DOE Patents [OSTI]

A biochip scanner device used to detect and acquire fluorescence signal data from biological microchips or biochips and method of use are provided. The biochip scanner device includes a laser for emitting a laser beam. A modulator, such as an optical chopper modulates the laser beam. A scanning head receives the modulated laser beam and a scanning mechanics coupled to the scanning head moves the scanning head relative to the biochip. An optical fiber delivers the modulated laser beam to the scanning head. The scanning head collects the fluorescence light from the biochip, launches it into the same optical fiber, which delivers the fluorescence into a photodetector, such as a photodiode. The biochip scanner device is used in a row scanning method to scan selected rows of the biochip with the laser beam size matching the size of the immobilization site.

Perov, Alexander (Troitsk, RU); Belgovskiy, Alexander I. (Mayfield Heights, OH); Mirzabekov, Andrei D. (Darien, IL)

2001-01-01T23:59:59.000Z

376

Fragment capture device  

DOE Patents [OSTI]

A fragment capture device for use in explosive containment. The device comprises an assembly of at least two rows of bars positioned to eliminate line-of-sight trajectories between the generation point of fragments and a surrounding containment vessel or asset. The device comprises an array of at least two rows of bars, wherein each row is staggered with respect to the adjacent row, and wherein a lateral dimension of each bar and a relative position of each bar in combination provides blockage of a straight-line passage of a solid fragment through the adjacent rows of bars, wherein a generation point of the solid fragment is located within a cavity at least partially enclosed by the array of bars.

Payne, Lloyd R. (Los Lunas, NM); Cole, David L. (Albuquerque, NM)

2010-03-30T23:59:59.000Z

377

Pendulum detector testing device  

DOE Patents [OSTI]

A detector testing device which provides consistent, cost-effective, repeatable results. The testing device is primarily constructed of PVC plastic and other non-metallic materials. Sensitivity of a walk-through detector system can be checked by: 1) providing a standard test object simulating the mass, size and material content of a weapon or other contraband, 2) suspending the test object in successive positions, such as head, waist and ankle levels, simulating where the contraband might be concealed on a person walking through the detector system; and 3) swinging the suspended object through each of the positions, while operating the detector system and observing its response. The test object is retained in a holder in which the orientation of the test device or target can be readily changed, to properly complete the testing requirements.

Gonsalves, John M. (Modesto, CA)

1997-01-01T23:59:59.000Z

378

Electrochromic optical switching device  

DOE Patents [OSTI]

An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source.

Lampert, Carl M. (El Sobrante, CA); Visco, Steven J. (Berkeley, CA)

1992-01-01T23:59:59.000Z

379

Pendulum detector testing device  

DOE Patents [OSTI]

A detector testing device is described which provides consistent, cost-effective, repeatable results. The testing device is primarily constructed of PVC plastic and other non-metallic materials. Sensitivity of a walk-through detector system can be checked by: (1) providing a standard test object simulating the mass, size and material content of a weapon or other contraband, (2) suspending the test object in successive positions, such as head, waist and ankle levels, simulating where the contraband might be concealed on a person walking through the detector system; and (3) swinging the suspended object through each of the positions, while operating the detector system and observing its response. The test object is retained in a holder in which the orientation of the test device or target can be readily changed, to properly complete the testing requirements. 5 figs.

Gonsalves, J.M.

1997-09-30T23:59:59.000Z

380

Nonaqueous Electrical Storage Device  

DOE Patents [OSTI]

An electrochemical capacitor is disclosed that features two, separated, high surface area carbon cloth electrodes sandwiched between two current collectors fabricated of a conductive polymer having a flow temperature greater than 130.degree. C., the perimeter of the electrochemical capacitor being sealed with a high temperature gasket to form a single cell device. The gasket material is a thermoplastic stable at temperatures greater than 100.degree. C., preferably a polyester or a polyurethane, and having a reflow temperature above 130.degree. C. but below the softening temperature of the current collector material. The capacitor packaging has good mechanical integrity over a wide temperature range, contributes little to the device equivalent series resistance (ESR), and is stable at high potentials. In addition, the packaging is designed to be easily manufacturable by assembly line methods. The individual cells can be stacked in parallel or series configuration to reach the desired device voltage and capacitance.

McEwen, Alan B. (Melrose, MA); Evans, David A. (Seekonk, MA); Blakley, Thomas J. (Woburn, MA); Goldman, Jay L. (Mansfield, MA)

1999-10-26T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Ion manipulation device  

DOE Patents [OSTI]

An ion manipulation method and device is disclosed. The device includes a pair of substantially parallel surfaces. An array of inner electrodes is contained within, and extends substantially along the length of, each parallel surface. The device includes a first outer array of electrodes and a second outer array of electrodes. Each outer array of electrodes is positioned on either side of the inner electrodes, and is contained within and extends substantially along the length of each parallel surface. A DC voltage is applied to the first and second outer array of electrodes. A RF voltage, with a superimposed electric field, is applied to the inner electrodes by applying the DC voltages to each electrode. Ions either move between the parallel surfaces within an ion confinement area or along paths in the direction of the electric field, or can be trapped in the ion confinement area.

Anderson, Gordon A; Smith, Richard D; Ibrahim, Yehia M; Baker, Erin M

2014-09-16T23:59:59.000Z

382

Regenerative combustion device  

DOE Patents [OSTI]

A regenerative combustion device having a combustion zone, and chemicals contained within the combustion zone, such as water, having a first equilibrium state, and a second combustible state. Means for transforming the chemicals from the first equilibrium state to the second combustible state, such as electrodes, are disposed within the chemicals. An igniter, such as a spark plug or similar device, is disposed within the combustion zone for igniting combustion of the chemicals in the second combustible state. The combustion products are contained within the combustion zone, and the chemicals are selected such that the combustion products naturally chemically revert into the chemicals in the first equilibrium state following combustion. The combustion device may thus be repeatedly reused, requiring only a brief wait after each ignition to allow the regeneration of combustible gasses within the head space.

West, Phillip B.

2004-03-16T23:59:59.000Z

383

Electrochromic optical switching device  

DOE Patents [OSTI]

An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source. 3 figs.

Lampert, C.M.; Visco, S.J.

1992-08-25T23:59:59.000Z

384

Temperature dependence of thermal conductivity of AlxGa1-xN thin films measured by the differential 3 technique  

E-Print Network [OSTI]

Device Processing Lab EE 137 Intro to Semiconductor Optoelectronic Devices EE 160 Fiber Optic Control EE 137 Intro to Semiconductor Optoelectronic Devices EE 143 Multimedia Technologies

385

Highly entangled photons from hybrid piezoelectric-semiconductor quantum dot devices  

E-Print Network [OSTI]

Entanglement resources are key ingredients of future quantum technologies. If they could be efficiently integrated into a semiconductor platform a new generation of devices could be envisioned, whose quantum-mechanical functionalities are controlled via the mature semiconductor technology. Epitaxial quantum dots (QDs) embedded in diodes would embody such ideal quantum devices, but QD structural asymmetries lower dramatically the degree of entanglement of the sources and hamper severely their real exploitation in the foreseen applications. In this work, we overcome this hurdle using strain-tunable optoelectronic devices, where any QD can be tuned for the emission of highly polarization-entangled photons. The electrically-controlled sources violate Bell inequalities without the need of spectral or temporal filtering and they feature the highest degree of entanglement ever reported for QDs, with concurrence as high as 0.75(2). These quantum-devices are at present the most promising candidates for the direct implementation of QD-based entanglement-resources in quantum information science and technology.

Rinaldo Trotta; Johannes S. Wildmann; Eugenio Zallo; Oliver G. Schmidt; Armando Rastelli

2014-03-02T23:59:59.000Z

386

Precision alignment device  

DOE Patents [OSTI]

Apparatus for providing automatic alignment of beam devices having an associated structure for directing, collimating, focusing, reflecting, or otherwise modifying the main beam. A reference laser is attached to the structure enclosing the main beam producing apparatus and produces a reference beam substantially parallel to the main beam. Detector modules containing optical switching devices and optical detectors are positioned in the path of the reference beam and are effective to produce an electrical output indicative of the alignment of the main beam. This electrical output drives servomotor operated adjustment screws to adjust the position of elements of the structure associated with the main beam to maintain alignment of the main beam. 5 figs.

Jones, N.E.

1988-03-10T23:59:59.000Z

387

Phononic crystal devices  

DOE Patents [OSTI]

Phononic crystals that have the ability to modify and control the thermal black body phonon distribution and the phonon component of heat transport in a solid. In particular, the thermal conductivity and heat capacity can be modified by altering the phonon density of states in a phononic crystal. The present invention is directed to phononic crystal devices and materials such as radio frequency (RF) tags powered from ambient heat, dielectrics with extremely low thermal conductivity, thermoelectric materials with a higher ratio of electrical-to-thermal conductivity, materials with phononically engineered heat capacity, phononic crystal waveguides that enable accelerated cooling, and a variety of low temperature application devices.

El-Kady, Ihab F. (Albuquerque, NM); Olsson, Roy H. (Albuquerque, NM)

2012-01-10T23:59:59.000Z

388

Earth Minerals Did you read chapter 29  

E-Print Network [OSTI]

1 Chapter 29 Earth Minerals Did you read chapter 29 before coming to class? A. Yes B. No Lets play that begins in Hawaii Other "Hot Spots" around the world The interior structure of Earth has been determined outer core #12;2 What is different on earth (as opposed to other planets)? Continents Why does

Hart, Gus

389

Effect of geotropism on instrument readings  

SciTech Connect (OSTI)

A review of gravity's effect on instrument readings, also referred to as geotropism. In this essay a review of meter movement construction and the effect are reviewed as it applies to portable radiation instruments. Reference to the three ANSI standards and their requirements are reviewed. An alternate approach to test for the effects is offered.

Rolph, James T.

2006-11-01T23:59:59.000Z

390

POLICY NAME 1ST READING BY  

E-Print Network [OSTI]

POLICY NAME 1ST READING BY FACULTY SENATE APPROVED BY FACULTY SENATE POSTED FOR PUBLIC COMMENT APPROVED BY PRES or PROVOST ADOPTED FINAL POLICY DESTINATION Student Pregnancy Leave Pending Regents Professor (Version 1) 01/26/2011 04/27/2011 Regents Professor (Version 2) 04/12/2012 Revised Policy

Maxwell, Bruce D.

391

Gain dynamics of quantum dot devices for dual-state operation  

SciTech Connect (OSTI)

Ground state gain dynamics of In(Ga)As-quantum dot excited state lasers are investigated via single-color ultrafast pump-probe spectroscopy below and above lasing threshold. Two-color pump-probe experiments are used to localize lasing and non-lasing quantum dots within the inhomogeneously broadened ground state. Single-color results yield similar gain recovery rates of the ground state for lasing and non-lasing quantum dots decreasing from 6 ps to 2 ps with increasing injection current. We find that ground state gain dynamics are influenced solely by the injection current and unaffected by laser operation of the excited state. This independence is promising for dual-state operation schemes in quantum dot based optoelectronic devices.

Kaptan, Y., E-mail: yuecel.kaptan@physik.tu-berlin.de; Herzog, B.; Kolarczik, M.; Owschimikow, N.; Woggon, U. [Institut fr Optik und Atomare Physik, Technische Universitt Berlin, Berlin (Germany); Schmeckebier, H.; Arsenijevi?, D.; Bimberg, D. [Institut fr Festkrperphysik, Technische Universitt Berlin, Berlin (Germany); Mikhelashvili, V.; Eisenstein, G. [Technion Institute of Technology, Faculty of Electrical Engineering, Haifa (Israel)

2014-06-30T23:59:59.000Z

392

Solar Innovator | Alta Devices  

ScienceCinema (OSTI)

Selected to participate in the Energy Department's SunShot Initiative, Alta Devices produces solar cells that convert sunlight into electricity at world record-breaking levels of efficiency. Through its innovative solar technology Alta is helping bring down the cost of solar. Learn more about the Energy Department's efforts to advance solar technology at energy.gov/solar .

Mattos, Laila; Le, Minh

2013-05-29T23:59:59.000Z

393

Device Oriented Project Controller  

SciTech Connect (OSTI)

This proposal is directed at the issue of developing control systems for very large HEP projects. A de-facto standard in accelerator control is the Experimental Physics and Industrial Control System (EPICS), which has been applied successfully to many physics projects. EPICS is a channel based system that requires that each channel of each device be configured and controlled. In Phase I, the feasibility of a device oriented extension to the distributed channel database was demonstrated by prototyping a device aware version of an EPICS I/O controller that functions with the current version of the channel access communication protocol. Extensions have been made to the grammar to define the database. Only a multi-stage position controller with limit switches was developed in the demonstration, but the grammar should support a full range of functional record types. In phase II, a full set of record types will be developed to support all existing record types, a set of process control functions for closed loop control, and support for experimental beam line control. A tool to configure these records will be developed. A communication protocol will be developed or extensions will be made to Channel Access to support introspection of components of a device. Performance bench marks will be made on both communication protocol and the database. After these records and performance tests are under way, a second of the grammar will be undertaken.

Dalesio, Leo; Kraimer, Martin

2013-11-20T23:59:59.000Z

394

Multiple gap photovoltaic device  

DOE Patents [OSTI]

A multiple gap photovoltaic device having a transparent electrical contact adjacent a first cell which in turn is adjacent a second cell on an opaque electrical contact, includes utilizing an amorphous semiconductor as the first cell and a crystalline semiconductor as the second cell.

Dalal, Vikram L. (Newark, DE)

1981-01-01T23:59:59.000Z

395

Microuidic device reads up to four consecutive base pairs in DNA sequencing-by-synthesis  

E-Print Network [OSTI]

connected through tygon tubing (Cole-Parmer, Vernon Hills, IL) to Lee-valve arrays (Fluidigm Corp., South

Quake, Stephen R.

396

Release of DRAFT RFP Headquarters Reading Room Instructions/Guidelines  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Release of DRAFT RFP Headquarters Reading Room InstructionsGuidelines 1. Reading Room Points of Contact: 721 - 88, Mike Baehre, (202) 586-6575 89 - Close of Draft RFP, John...

397

Reading Abilities: Importance of Visual-Spatial Attention  

E-Print Network [OSTI]

Children with dyslexia may read poorly for several reasons. Recent research suggests that in addition to skills with language sounds, visual-spatial attention may be an important predictor of reading abilities.

Gabrieli, JohnD.E.

398

?-RA: a parallel sparse index for genomic read alignment  

E-Print Network [OSTI]

Background Genomic read alignment involves mapping (exactly or approximately) short reads from a particular individual onto a pre-sequenced reference genome of the same species. Because all individuals of the same species ...

Kü lekci, M O?uzhan; Hon, Wing-Kai; Shah, Rahul; Vitter, Jeffrey Scott; Xu, Bojian

2011-07-27T23:59:59.000Z

399

The Evaluation and Use of Extensive Reading Materials  

E-Print Network [OSTI]

The current investigation is based on the topic of The evaluation and use of extensive reading materials. Throughout this research, I attempted to find out whether a theory-based exploration on the evaluation and use of extensive reading...

Tignanelli, Rosana

2007-06-29T23:59:59.000Z

400

Packaging of solid state devices  

DOE Patents [OSTI]

A package for one or more solid state devices in a single module that allows for operation at high voltage, high current, or both high voltage and high current. Low thermal resistance between the solid state devices and an exterior of the package and matched coefficient of thermal expansion between the solid state devices and the materials used in packaging enables high power operation. The solid state devices are soldered between two layers of ceramic with metal traces that interconnect the devices and external contacts. This approach provides a simple method for assembling and encapsulating high power solid state devices.

Glidden, Steven C.; Sanders, Howard D.

2006-01-03T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Non- contacting capacitive diagnostic device  

DOE Patents [OSTI]

A non-contacting capacitive diagnostic device includes a pulsed light source for producing an electric field in a semiconductor or photovoltaic device or material to be evaluated and a circuit responsive to the electric field. The circuit is not in physical contact with the device or material being evaluated and produces an electrical signal characteristic of the electric field produced in the device or material. The diagnostic device permits quality control and evaluation of semiconductor or photovoltaic device properties in continuous manufacturing processes.

Ellison, Timothy

2005-07-12T23:59:59.000Z

402

Light modulating device  

DOE Patents [OSTI]

In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity.

Rauh, R. David (Newton, MA); Goldner, Ronald B. (Lexington, MA)

1989-01-01T23:59:59.000Z

403

Light modulating device  

DOE Patents [OSTI]

In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity are disclosed. 1 fig.

Rauh, R.D.; Goldner, R.B.

1989-12-26T23:59:59.000Z

404

Nuclear reactor safety device  

DOE Patents [OSTI]

A safety device is disclosed for use in a nuclear reactor for axially repositioning a control rod with respect to the reactor core in the event of an upward thermal excursion. Such safety device comprises a laminated helical ribbon configured as a tube-like helical coil having contiguous helical turns with slidably abutting edges. The helical coil is disclosed as a portion of a drive member connected axially to the control rod. The laminated ribbon is formed of outer and inner laminae. The material of the outer lamina has a greater thermal coefficient of expansion than the material of the inner lamina. In the event of an upward thermal excursion, the laminated helical coil curls inwardly to a smaller diameter. Such inward curling causes the total length of the helical coil to increase by a substantial increment, so that the control rod is axially repositioned by a corresponding amount to reduce the power output of the reactor.

Hutter, Ernest (Wilmette, IL)

1986-01-01T23:59:59.000Z

405

Dielectrokinetic chromatography devices  

DOE Patents [OSTI]

Disclosed herein are methods and devices for dielectrokinetic chromatography. As disclosed, the devices comprise microchannels having at least one perturber which produces a non-uniformity in a field spanning the width of the microchannel. The interaction of the field non-uniformity with a perturber produces a secondary flow which competes with a primary flow. By decreasing the size of the perturber the secondary flow becomes significant for particles/analytes in the nanometer-size range. Depending on the nature of a particle/analyte present in the fluid and its interaction with the primary flow and the secondary flow, the analyte may be retained or redirected. The composition of the primary flow can be varied to affect the magnitude of primary and/or secondary flows on the particles/analytes and thereby separate and concentrate it from other particles/analytes.

Chirica, Gabriela S; Fiechtner, Gregory J; Singh, Anup K

2014-12-16T23:59:59.000Z

406

Regenerative braking device  

DOE Patents [OSTI]

Disclosed are several embodiments of a regenerative braking device for an automotive vehicle. The device includes a plurality of rubber rollers (24, 26) mounted for rotation between an input shaft (14) connectable to the vehicle drivetrain and an output shaft (16) which is drivingly connected to the input shaft by a variable ratio transmission (20). When the transmission ratio is such that the input shaft rotates faster than the output shaft, the rubber rollers are torsionally stressed to accumulate energy, thereby slowing the vehicle. When the transmission ratio is such that the output shaft rotates faster than the input shaft, the rubber rollers are torsionally relaxed to deliver accumulated energy, thereby accelerating or driving the vehicle.

Hoppie, Lyle O. (Birmingham, MI)

1982-01-12T23:59:59.000Z

407

Support and maneuvering device  

DOE Patents [OSTI]

A support and maneuvering device includes an elongated flexible inflatable enclosure having a fixed end and a movable end. The movable end is collapsible toward the fixed end to a contracted position when the enclosure is in a noninflated condition. Upon inflation, the movable end is movable away from the fixed end to an extended position. The movable end includes means for mounting an article such as a solar reflector thereon. The device also includes a plurality of position controlling means disposed about the movable end to effect adjusting movement of portions thereof by predetermined amounts and for controlling an angle at which the article disposed at the movable end is oriented. The plurality of position controlling means limits a suitable number degrees of freedom of the movable end for transmitting a steering motion thereto and for controlling the position thereof. 9 figs.

Wood, R.L.

1987-03-23T23:59:59.000Z

408

Microelectromechanical safe arm device  

DOE Patents [OSTI]

Microelectromechanical (MEM) apparatus and methods for operating, for preventing unintentional detonation of energetic components comprising pyrotechnic and explosive materials, such as air bag deployment systems, munitions and pyrotechnics. The MEM apparatus comprises an interrupting member that can be moved to block (interrupt) or complete (uninterrupt) an explosive train that is part of an energetic component. One or more latching members are provided that engage and prevent the movement of the interrupting member, until the one or more latching members are disengaged from the interrupting member. The MEM apparatus can be utilized as a safe and arm device (SAD) and electronic safe and arm device (ESAD) in preventing unintentional detonations. Methods for operating the MEM apparatus include independently applying drive signals to the actuators coupled to the latching members, and an actuator coupled to the interrupting member.

Roesler, Alexander W. (Tijeras, NM)

2012-06-05T23:59:59.000Z

409

Wire brush fastening device  

DOE Patents [OSTI]

A fastening device is provided which is a variation on the conventional nut and bolt. The bolt has a longitudinal axis and threading helically affixed thereon along the longitudinal axis. A nut having a bore extending therethrough is provided. The bore of the nut has a greater diameter than the diameter of the bolt so the bolt can extend through the bore. An array of wire bristles are affixed within the bore so as to form a brush. The wire bristles extend inwardly from the bore and are constructed and arranged of the correct size, length and stiffness to guide the bolt within the bore and to restrain the bolt within the bore as required. A variety of applications of the wire brush nut are disclosed, including a bolt capture device and a test rig apparatus. 13 figs.

Meigs, R.A.

1995-09-19T23:59:59.000Z

410

Residual gas analysis device  

DOE Patents [OSTI]

A system is provided for testing the hermeticity of a package, such as a microelectromechanical systems package containing a sealed gas volume, with a sampling device that has the capability to isolate the package and breach the gas seal connected to a pulse valve that can controllably transmit small volumes down to 2 nanoliters to a gas chamber for analysis using gas chromatography/mass spectroscopy diagnostics.

Thornberg, Steven M. (Peralta, NM)

2012-07-31T23:59:59.000Z

411

Biomolecular detection device  

DOE Patents [OSTI]

A device for detecting and measuring the concentration of biomolecules in solution, utilizing a conducting electrode in contact with a solution containing target biomolecules, with a film with controllable pore size distribution characteristics applied to at least one surface of the conducting electrode. The film is functionalized with probe molecules that chemically interact with the target biomolecules at the film surface, blocking indicator molecules present in solution from diffusing from the solution to the electrode, thereby changing the electrochemical response of the electrode.

Huo, Qisheng (Albuquerque, NM); Liu, Jun (Albuquerque, NM)

2008-10-21T23:59:59.000Z

412

Hybrid electroluminescent devices  

DOE Patents [OSTI]

A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

Shiang, Joseph John (Niskayuna, NY); Duggal, Anil Raj (Niskayuna, NY); Michael, Joseph Darryl (Schenectady, NY)

2010-08-03T23:59:59.000Z

413

Plasma jet ignition device  

DOE Patents [OSTI]

An ignition device of the plasma jet type is disclosed. The device has a cylindrical cavity formed in insulating material with an electrode at one end. The other end of the cylindrical cavity is closed by a metal plate with a small orifice in the center which plate serves as a second electrode. An arc jumping between the first electrode and the orifice plate causes the formation of a highly-ionized plasma in the cavity which is ejected through the orifice into the engine cylinder area to ignite the main fuel mixture. Two improvements are disclosed to enhance the operation of the device and the length of the plasma plume. One improvement is a metal hydride ring which is inserted in the cavity next to the first electrode. During operation, the high temperature in the cavity and the highly excited nature of the plasma breaks down the metal hydride, liberating hydrogen which acts as an additional fuel to help plasma formation. A second improvement consists of a cavity insert containing a plurality of spaced, metal rings. The rings act as secondary spark gap electrodes reducing the voltage needed to maintain the initial arc in the cavity.

McIlwain, Michael E. (Franklin, MA); Grant, Jonathan F. (Wayland, MA); Golenko, Zsolt (North Reading, MA); Wittstein, Alan D. (Fairfield, CT)

1985-01-15T23:59:59.000Z

414

Thermophotovoltaic energy conversion device  

DOE Patents [OSTI]

A thermophotovoltaic device and a method for making the thermophotovoltaic device are disclosed. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used. 1 fig.

Charache, G.W.; Baldasaro, P.F.; Egley, J.L.

1998-05-19T23:59:59.000Z

415

Secure Compressed Reading in Smart Grids  

E-Print Network [OSTI]

Smart Grids measure energy usage in real-time and tailor supply and delivery accordingly, in order to improve power transmission and distribution. For the grids to operate effectively, it is critical to collect readings from massively-installed smart meters to control centers in an efficient and secure manner. In this paper, we propose a secure compressed reading scheme to address this critical issue. We observe that our collected real-world meter data express strong temporal correlations, indicating they are sparse in certain domains. We adopt Compressed Sensing technique to exploit this sparsity and design an efficient meter data transmission scheme. Our scheme achieves substantial efficiency offered by compressed sensing, without the need to know beforehand in which domain the meter data are sparse. This is in contrast to traditional compressed-sensing based scheme where such sparse-domain information is required a priori. We then design specific dependable scheme to work with our compressed sensing based ...

Cai, Sheng; Chen, Minghua; Yan, Jianxin; Jaggi, Sidharth

2012-01-01T23:59:59.000Z

416

Reading Enterprise Hub | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, search RAPIDColoradosourceRaus PowerLouisiana: Energy ResourcesReXorceReading

417

Literaturlenz: Reading with Authors from Germany, Switzerland, and Austria Reading with Larissa Boehning, Monica Cantieni, and Linda Stift  

E-Print Network [OSTI]

Literaturlenz: Reading with Authors from Germany, Switzerland, and Austria Reading with Larissa.m. Each year Literaturlenz brings authors from Germany, Switzerland, and Austria to the UW Campus. Each Boehning from Germany, Monica Cantieni from Switzerland, and Linda Stift of Austria. The readings

Sheridan, Jennifer

418

Thermoelectric Materials, Devices and Systems:  

Broader source: Energy.gov (indexed) [DOE]

-DRAFT - FOR OFFICIAL USE ONLY - DRAFT Thermoelectric Materials, Devices and Systems: 1 Technology Assessment 2 Contents 3 1. Thermoelectric Generation ......

419

Improved Thermoelectric Devices: Advanced Semiconductor Materials for Thermoelectric Devices  

SciTech Connect (OSTI)

Broad Funding Opportunity Announcement Project: Phononic Devices is working to recapture waste heat and convert it into usable electric power. To do this, the company is using thermoelectric devices, which are made from advanced semiconductor materials that convert heat into electricity or actively remove heat for refrigeration and cooling purposes. Thermoelectric devices resemble computer chips, and they manage heat by manipulating the direction of electrons at the nanoscale. These devices arent new, but they are currently too inefficient and expensive for widespread use. Phononic Devices is using a high-performance, cost-effective thermoelectric design that will improve the devices efficiency and enable electronics manufacturers to more easily integrate them into their products.

None

2009-12-11T23:59:59.000Z

420

658 IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, VOL. 28, NO. 4, DECEMBER 2005 Superlattice Microrefrigerators Fusion Bonded  

E-Print Network [OSTI]

Superlattice Microrefrigerators Fusion Bonded With Optoelectronic Devices Yan Zhang, Gehong Zeng, Joachim CURRENT research trends in optoelectronic devices are moving toward increased speed, wavelength capacity, and level of integration. Lasers and optoelectronic devices are very sensitive to temperature. Heat flux

Bowers, John

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 11, NO. 6, NOVEMBER/DECEMBER 2005 1255 Intimate Monolithic Integration of Chip-Scale  

E-Print Network [OSTI]

circuits comprising optoelectronic devices (e.g., surface-illuminated pho- todetectors, waveguide quantum, and self-planarization and passi- vation steps to compactly integrate optoelectronic devices- cation wavelength band. Index Terms--Integrated optoelectronic devices, monolithic in- tegration

Demir, Hilmi Volkan

422

Portable Source Identification Device  

SciTech Connect (OSTI)

U.S. Customs and Border Protection (CBP) is the primary enforcement agency protecting the nations ports of entry. CBP is enhancing its capability to interdict the illicit import of nuclear and radiological materials and devices that may be used by terrorists. Pacific Northwest National Laboratory (PNNL) is providing scientific and technical support to CBP in their goal to enable rapid deployment of nuclear and radiation detection systems at U. S. ports of entry to monitor 100% of the incoming international traffic and cargo while not adversely impacting the operations or throughput of the ports. As the deployment of radiation detection systems proceeds, there is a need to adapt the baseline radiation portal monitor (RPM) system technology to operations at these diverse ports of entry. When screening produces an alarm in the primary inspection RPM, the alarming vehicle is removed from the flow of commerce and the alarm is typically confirmed in a secondary inspection RPM. The portable source identification device (PSID) is a radiation sensor panel (RSP), based on thallium-doped sodium iodide (NaI(Tl)) scintillation detector and gamma spectroscopic analysis hardware and software, mounted on a scissor lift on a small truck. The lift supports a box containing a commercial off-the-shelf (COTS) sodium iodide detector that provides real-time isotopic identification, including neutron detectors to interdict Weapons of Mass Destruction (WMD) and radiation dispersion devices (RDD). The scissor lift will lower the detectors to within a foot off the ground and raise them to approximately 24 feet in the air, allowing a wide vertical scanning range.

Andersen, Eric S.; Samuel, Todd J.; Gervais, Kevin L.

2005-08-01T23:59:59.000Z

423

Nanotube resonator devices  

DOE Patents [OSTI]

A fully-functional radio receiver fabricated from a single nanotube is being disclosed. Simultaneously, a single nanotube can perform the functions of all major components of a radio: antenna, tunable band-pass filter, amplifier, and demodulator. A DC voltage source, as supplied by a battery, can power the radio. Using carrier waves in the commercially relevant 40-400 MHz range and both frequency and amplitude modulation techniques, successful music and voice reception has been demonstrated. Also disclosed are a radio transmitter and a mass sensor using a nanotube resonator device.

Jensen, Kenneth J; Zettl, Alexander K; Weldon, Jeffrey A

2014-05-06T23:59:59.000Z

424

Micro environmental sensing device  

DOE Patents [OSTI]

A microelectromechanical (MEM) acceleration switch is disclosed which includes a proof mass flexibly connected to a substrate, with the proof mass being moveable in a direction substantially perpendicular to the substrate in response to a sensed acceleration. An electrode on the proof mass contacts one or more electrodes located below the proof mass to provide a switch closure in response to the sensed acceleration. Electrical latching of the switch in the closed position is possible with an optional latching electrode. The MEM acceleration switch, which has applications for use as an environmental sensing device, can be fabricated using micromachining.

Polosky, Marc A. (Tijeras, NM); Lukens, Laurance L. (Tijeras, NM)

2006-05-02T23:59:59.000Z

425

Stretchable and foldable electronic devices  

DOE Patents [OSTI]

Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

Rogers, John A; Huang, Yonggang; Ko, Heung Cho; Stoykovich, Mark; Choi, Won Mook; Song, Jizhou; Ahn, Jong Hyun; Kim, Dae Hyeong

2014-12-09T23:59:59.000Z

426

Stretchable and foldable electronic devices  

DOE Patents [OSTI]

Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device.

2013-10-08T23:59:59.000Z

427

Crystalline Nanoporous Frameworks: a Nanolaboratory for Probing Excitonic Device Concepts.  

SciTech Connect (OSTI)

Electro-optical organic materials hold great promise for the development of high-efficiency devices based on exciton formation and dissociation, such as organic photovoltaics (OPV) and organic light-emitting devices (OLEDs). However, the external quantum efficiency (EQE) of both OPV and OLEDs must be improved to make these technologies economical. Efficiency rolloff in OLEDs and inability to control morphology at key OPV interfaces both reduce EQE. Only by creating materials that allow manipulation and control of the intimate assembly and communication between various nanoscale excitonic components can we hope to first understand and then engineer the system to allow these materials to reach their potential. The aims of this proposal are to: 1) develop a paradigm-changing platform for probing excitonic processes composed of Crystalline Nanoporous Frameworks (CNFs) infiltrated with secondary materials (such as a complimentary semiconductor); 2) use them to probe fundamental aspects of excitonic processes; and 3) create prototype OPVs and OLEDs using infiltrated CNF as active device components. These functional platforms will allow detailed control of key interactions at the nanoscale, overcoming the disorder and limited synthetic control inherent in conventional organic materials. CNFs are revolutionary inorganic-organic hybrid materials boasting unmatched synthetic flexibility that allow tuning of chemical, geometric, electrical, and light absorption/generation properties. For example, bandgap engineering is feasible and polyaromatic linkers provide tunable photon antennae; rigid 1-5 nm pores provide an oriented, intimate host for triplet emitters (to improve light emission in OLEDs) or secondary semiconducting polymers (creating a charge-separation interface in OPV). These atomically engineered, ordered structures will enable critical fundamental questions to be answered concerning charge transport, nanoscale interfaces, and exciton behavior that are inaccessible in disordered systems. Implementing this concept also creates entirely new dimensions for device fabrication that could both improve performance, increase durability, and reduce costs with unprecedented control of over properties. This report summarizes the key results of this project and is divided into sections based on publications that resulted from the work. We begin in Section 2 with an investigation of light harvesting and energy transfer in a MOF infiltrated with donor and acceptor molecules of the type typically used in OPV devices (thiophenes and fullerenes, respectively). The results show that MOFs can provide multiple functions: as a light harvester, as a stabilizer and organizer or the infiltrated molecules, and as a facilitator of energy transfer. Section 3 describes computational design of MOF linker groups to accomplish light harvesting in the visible and facilitate charge separation and transport. The predictions were validated by UV-visible absorption spectroscopy, demonstrating that rational design of MOFs for light-harvesting purposes is feasible. Section 4 extends the infiltration concept discussed in Section to, which we now designate as %22Molecule%40MOF%22 to create an electrically conducting framework. The tailorability and high conductivity of this material are unprecedented, meriting publication in the journal Science and spawning several Technical Advances. Section 5 discusses processes we developed for depositing MOFs as thin films on substrates, a critical enabling technology for fabricating MOF-based electronic devices. Finally, in Section 6 we summarize results showing that a MOF thin film can be used as a sensitizer in a DSSC, demonstrating that MOFs can serve as active layers in excitonic devices. Overall, this project provides several crucial proofs-of- concept that the potential of MOFs for use in optoelectronic devices that we predicted several years ago [ 3 ] can be realized in practice.

Allendorf, Mark D.; Azoulay, Jason; Ford, Alexandra Caroline [Sandia National Laboratories, Albuquerque, NM; Foster, Michael E.; El Gabaly Marquez, Farid; Leonard, Francois Leonard; Leong-Hau, Kirsty; Stavila, Vitalie; Talin, Albert Alec; Wong, Brian M.; Brumbach, Michael T. [Sandia National Laboratories, Albuquerque, NM; Van Gough, D.; Lambert, Timothy N. [Sandia National Laboratories, Albuquerque, NM; Rodriguez, Mark A. [Sandia National Laboratories, Albuquerque, NM; Spoerke, Erik David [Sandia National Laboratories, Albuquerque, NM; Wheeler, David R. [Sandia National Laboratories, Albuquerque, NM; Deaton, Joseph C.; Centrone, Andrea; Haney, Paul; Kinney, R.; Szalai, Veronika; Yoon, Heayoung P.

2014-09-01T23:59:59.000Z

428

Fluid flow monitoring device  

DOE Patents [OSTI]

A flow meter and temperature measuring device are described comprising a tube with a body centered therein for restricting flow and a sleeve at the upper end of the tube to carry several channels formed longitudinally in the sleeve to the appropriate axial location where they penetrate the tube to allow pressure measurements and temperature measurements with thermocouples. The high pressure measurement is made using a channel penetrating the tube away from the body and the low pressure measurement is made at a location at the widest part of the body. An end plug seals the end of the device and holes at its upper end allow fluid to pass from the interior of the tube into a plenum. The channels are made by cutting grooves in the sleeve, the grooves widened at the surface of the sleeve and then a strip of sleeve material is welded to the grooves closing the channels. Preferably the sleeve is packed with powdered graphite before cutting the grooves and welding the strips. 7 figures.

McKay, M.D.; Sweeney, C.E.; Spangler, B.S. Jr.

1993-11-30T23:59:59.000Z

429

Fluid flow monitoring device  

DOE Patents [OSTI]

A flow meter and temperature measuring device comprising a tube with a body centered therein for restricting flow and a sleeve at the upper end of the tube to carry several channels formed longitudinally in the sleeve to the appropriate axial location where they penetrate the tube to allow pressure measurements and temperature measurements with thermocouples. The high pressure measurement is made using a channel penetrating the tube away from the body and the low pressure measurement is made at a location at the widest part of the body. An end plug seals the end of the device and holes at its upper end allow fluid to pass from the interior of the tube into a plenum. The channels are made by cutting grooves in the sleeve, the grooves widened at the surface of the sleeve and then a strip of sleeve material is welded to the grooves closing the channels. Preferably the sleeve is packed with powdered graphite before cutting the grooves and welding the strips.

McKay, Mark D. (1426 Socastee Dr., North Augusta, SC 29841); Sweeney, Chad E. (3600 Westhampton Dr., Martinez, GA 30907-3036); Spangler, Jr., B. Samuel (2715 Margate Dr., Augusta, GA 30909)

1993-01-01T23:59:59.000Z

430

Thermoplastic tape compaction device  

DOE Patents [OSTI]

A device is disclosed for bonding a thermoplastic tape to a substrate to form a fully consolidated composite. This device has an endless chain associated with a frame so as to rotate in a plane that is perpendicular to a long dimension of the tape, the chain having pivotally connected chain links with each of the links carrying a flexible foot member that extends outwardly from the chain. A selected number of the foot members contact the tape, after the heating thereof, to cause the heated tape to bond to the substrate. The foot members are each a thin band of metal oriented transversely to the chain, with a flexibility and width and length to contact the tape so as to cause the tape to conform to the substrate to achieve consolidation of the tape and the substrate. A biased leaf-type spring within the frame bears against an inner surface of the chain to provide the compliant pressure necessary to bond the tape to the substrate. The chain is supported by sprockets on shafts rotatably supported in the frame and, in one embodiment, one of the shafts has a drive unit to produce rotation such that the foot members in contact with the tape move at the same speed as the tape. Cooling jets are positioned along the frame to cool the resultant consolidated composite. 5 figures.

Campbell, V.W.

1994-12-27T23:59:59.000Z

431

Carbon based prosthetic devices  

SciTech Connect (OSTI)

This is the final report of a one-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project objective was to evaluate the use of carbon/carbon-fiber-reinforced composites for use in endoprosthetic devices. The application of these materials for the metacarpophalangeal (MP) joints of the hand was investigated. Issues concerning mechanical properties, bone fixation, biocompatibility, and wear are discussed. A system consisting of fiber reinforced materials with a pyrolytic carbon matrix and diamond-like, carbon-coated wear surfaces was developed. Processes were developed for the chemical vapor infiltration (CVI) of pyrolytic carbon into porous fiber preforms with the ability to tailor the outer porosity of the device to provide a surface for bone in-growth. A method for coating diamond-like carbon (DLC) on the articulating surface by plasma-assisted chemical vapor deposition (CVD) was developed. Preliminary results on mechanical properties of the composite system are discussed and initial biocompatibility studies were performed.

Devlin, D.J.; Carroll, D.W.; Barbero, R.S.; Archuleta, T. [Los Alamos National Lab., NM (US); Klawitter, J.J.; Ogilvie, W.; Strzepa, P. [Ascension Orthopedics (US); Cook, S.D. [Tulane Univ., New Orleans, LA (US). School of Medicine

1998-12-31T23:59:59.000Z

432

Young and Older Adults Reading of Distracters  

E-Print Network [OSTI]

. Psychology and Aging, 21, 448-465. Shipley, W. C. (1940). A self-administered scale for measuring intellectual impairment and deterioration. Journal of Psychology, 9, 371-377. Kemper, S., McDowd, J., Metcalf, K., & Liu, C.-J. (2008). Young and older...Kemper, S., McDowd, J., Metcalf, K., & Liu, C.-J. (2008). Young and older adults reading of distracters. Educational Gerontology, 34, 489-502. PM#2396579. Publishers official version: http://dx.doi.org/10.1080/03601270701835858. Open Access...

Kemper, Susan; McDowd, Joan; Metcalf, Kim; Liu, Chiung-Ju

2008-05-01T23:59:59.000Z

433

Dickensian Melodrama: a Reading of the Novels  

E-Print Network [OSTI]

fuzzier than that: in reading Victorian critics of Dickens like George Eliot, James Fitzjames Stephen, R. H. Hutton, Anthony Trollope, and George Gissing, one often finds it difficult to tell precisely what they had in mind in accusing Dickens of being..., the thought of that you propose, should have brought the blushes to your face, and made you dumb with shame;but now, with want at our heartha husband mad with sorrowchildren unprotectednow to offer!oh! you have a heart of stone, or you could ne'er...

Worth, George J.

1978-01-01T23:59:59.000Z

434

Reading the Cosmic Writing on the Wall  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar HomePromising Science for1PrincipalRare | National NuclearReading the

435

DOE-ID FOIA Reading Room  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to UserProduct: CrudeOffice of ScientificSolar Residence by e2DOE5,Reading

436

Reading the EIS on compact disc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 -the Mid-Infrared at 278, 298, andEpidermalOxide Fuel CellsReaction ofReading

437

Fuel vapor control device  

SciTech Connect (OSTI)

A fuel vapor control device is described having a valve opening and closing a passage connecting a carburetor and a charcoal canister according to a predetermined temperature. A first coil spring formed by a ''shape memory effect'' alloy is provided to urge the valve to open the passage when the temperature is high. A second coil spring urges the valve to close the passage. A solenoid is provided to urge an armature against the valve to close the passage against the force of the first coil spring when the engine is running. The solenoid heats the first coil spring to generate a spring force therein when the engine is running. When the engine is turned off, the solenoid is deactivated, and the force of the first spring overcomes the force of the second spring to open the passage until such time as the temperature of the first spring drops below the predetermined temperature.

Ota, I.; Nishimura, Y.; Nishio, S.; Yogo, K.

1987-10-20T23:59:59.000Z

438

Ceramics for fusion devices  

SciTech Connect (OSTI)

Ceramics are required for a number of applications in fusion devices, among the most critical of which are magnetic coil insulators, windows for RF heating systems, and structural uses. Radiation effects dominate consideration of candidate materials, although good pre-irradiation properties are a requisite. Materials and components can be optimized by careful control of chemical and microstructural content, and application of brittle material design and testing techniques. Future directions for research and development should include further extension of the data base in the areas of electrical, structural, and thermal properties; establishment of a fission neutron/fusion neutron correlation including transmutation gas effects; and development of new materials tailored to meet the specific needs of fusion reactors.

Clinard, F.W. Jr.

1984-01-01T23:59:59.000Z

439

False color viewing device  

DOE Patents [OSTI]

This invention consists of a viewing device for observing objects in near-infrared false-color comprising a pair of goggles with one or more filters in the apertures, and pads that engage the face for blocking stray light from the sides so that all light reaching, the user`s eyes come through the filters. The filters attenuate most visible light and pass near-infrared (having wavelengths longer than approximately 700 nm) and a small amount of blue-green and blue-violet (having wavelengths in the 500 to 520 nm and shorter than 435 nm, respectively). The goggles are useful for looking at vegetation to identify different species and for determining the health of the vegetation, and to detect some forms of camouflage.

Kronberg, J.W.

1991-05-08T23:59:59.000Z

440

Tunable surface plasmon devices  

DOE Patents [OSTI]

A tunable extraordinary optical transmission (EOT) device wherein the tunability derives from controlled variation of the dielectric constant of a semiconducting material (semiconductor) in evanescent-field contact with a metallic array of sub-wavelength apertures. The surface plasmon resonance wavelength can be changed by changing the dielectric constant of the dielectric material. In embodiments of this invention, the dielectric material is a semiconducting material. The dielectric constant of the semiconducting material in the metal/semiconductor interfacial region is controllably adjusted by adjusting one or more of the semiconductor plasma frequency, the concentration and effective mass of free carriers, and the background high-frequency dielectric constant in the interfacial region. Thermal heating and/or voltage-gated carrier-concentration changes may be used to variably adjust the value of the semiconductor dielectric constant.

Shaner, Eric A. (Rio Rancho, NM); Wasserman, Daniel (Lowell, MA)

2011-08-30T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Light emitting ceramic device  

DOE Patents [OSTI]

A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

2010-05-18T23:59:59.000Z

442

Nuclear reactor safety device  

DOE Patents [OSTI]

A safety device is described for use in a nuclear reactor for axially repositioning a control rod with respect to the reactor core in the event of a thermal excursion. It comprises a laminated strip helically configured to form a tube, said tube being in operative relation to said control rod. The laminated strip is formed of at least two materials having different thermal coefficients of expansion, and is helically configured such that the material forming the outer lamina of the tube has a greater thermal coefficient of expansion than the material forming the inner lamina of said tube. In the event of a thermal excursion the laminated strip will tend to curl inwardly so that said tube will increase in length, whereby as said tube increases in length it exerts a force on said control rod to axially reposition said control rod with respect to said core.

Hutter, E.

1983-08-15T23:59:59.000Z

443

Capillary interconnect device  

DOE Patents [OSTI]

A manifold for connecting external capillaries to the inlet and/or outlet ports of a microfluidic device for high pressure applications is provided. The fluid connector for coupling at least one fluid conduit to a corresponding port of a substrate that includes: (i) a manifold comprising one or more channels extending therethrough wherein each channel is at least partially threaded, (ii) one or more threaded ferrules each defining a bore extending therethrough with each ferrule supporting a fluid conduit wherein each ferrule is threaded into a channel of the manifold, (iii) a substrate having one or more ports on its upper surface wherein the substrate is positioned below the manifold so that the one or more ports is aligned with the one or more channels of the manifold, and (iv) means for applying an axial compressive force to the substrate to couple the one or more ports of the substrate to a corresponding proximal end of a fluid conduit.

Renzi, Ronald F. (Tracy, CA)

2007-12-25T23:59:59.000Z

444

False color viewing device  

DOE Patents [OSTI]

A viewing device for observing objects in near-infrared false-color comprising a pair of goggles with one or more filters in the apertures, and pads that engage the face for blocking stray light from the sides so that all light reaching the user's eyes come through the filters. The filters attenuate most visible light and pass near-infrared (having wavelengths longer than approximately 700 nm) and a small amount of blue-green and blue-violet (having wavelengths in the 500 to 520 nm and shorter than 435 nm, respectively). The goggles are useful for looking at vegetation to identify different species and for determining the health of the vegetation, and to detect some forms of camouflage.

Kronberg, James W. (108 Independent Blvd., Aiken, SC 29801)

1992-01-01T23:59:59.000Z

445

False color viewing device  

DOE Patents [OSTI]

A viewing device for observing objects in near-infrared false-color comprising a pair of goggles with one or more filters in the apertures, and pads that engage the face for blocking stray light from the sides so that all light reaching the user's eyes come through the filters. The filters attenuate most visible light and pass near-infrared (having wavelengths longer than approximately 700 nm) and a small amount of blue-green and blue-violet (having wavelengths in the 500 to 520 nm and shorter than 435 nm, respectively). The goggles are useful for looking at vegetation to identify different species and for determining the health of the vegetation, and to detect some forms of camouflage. 7 figs.

Kronberg, J.W.

1992-10-20T23:59:59.000Z

446

Electrical safety device  

DOE Patents [OSTI]

An electrical safety device for use in power tools that is designed to automatically discontinue operation of the power tool upon physical contact of the tool with a concealed conductive material. A step down transformer is used to supply the operating power for a disconnect relay and a reset relay. When physical contact is made between the power tool and the conductive material, an electrical circuit through the disconnect relay is completed and the operation of the power tool is automatically interrupted. Once the contact between the tool and conductive material is broken, the power tool can be quickly and easily reactivated by a reset push button activating the reset relay. A remote reset is provided for convenience and efficiency of operation.

White, David B. (Greenock, PA)

1991-01-01T23:59:59.000Z

447

Air bag restraint device  

DOE Patents [OSTI]

A rear-seat air bag restraint device is disclosed that prevents an individual, or individuals, from continuing violent actions while being transported in a patrol vehicle`s rear seat without requiring immediate physical contact by the law enforcement officer. The air bag is activated by a control switch in the front seat and inflates to independently restrict the amount of physical activity occurring in the rear seat of the vehicle while allowing the officer to safely stop the vehicle. The air bag can also provide the officer additional time to get backup personnel to aid him if the situation warrants it. The bag is inflated and maintains a constant pressure by an air pump. 8 figs.

Marts, D.J.; Richardson, J.G.

1995-10-17T23:59:59.000Z

448

Topic 2: Backtracking andTopic 2: Backtracking and Recommended ReadingsRecommended Readings  

E-Print Network [OSTI]

Recommended Readings ·· Chapter 3 from Programming in PrologChapter 3 from Programming in Prolog 2 Searching for the AnswerSearching for the Answer ·· Two notions of correctnessTwo notions of correctness ­­ Logical conjunction shouldn't matter ·· In practice, Prolog searches for an answerIn practice, Prolog searches

Stephenson, Ben

449

Optoelectronic down-conversion by four-wave mixing in a highly nonlinear fiber for millimeter-wave and THz phase-locking  

E-Print Network [OSTI]

Optoelectronic down-conversion of a THz optical beatnote to a RF intermediate frequency is performed with a standard Mach-Zehnder modulator followed by a zero dispersion-slope fiber. The two interleaved optical spectra obtained by four-wave mixing are shown to contain more than 75 harmonics enabling to conveniently recover the phase noise of a beatnote at 770 GHz at around 500 MHz. This four-wave mixing down-conversion technique is implemented in a two-frequency solid-state laser in order to directly phase-lock its 168 GHz beatnote to a 10 MHz local oscillator.

Rolland, Antoine; Brunel, Marc; Alouini, Mehdi

2014-01-01T23:59:59.000Z

450

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1996. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar in research and development, specialty alloys, and other applications. Optoelectronic devices were used

451

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2006. One company in Utah  

E-Print Network [OSTI]

circuits. Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

452

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1998. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

453

P44 ECS Solid State Letters, 2 (5) P44-P46 (2013) 2162-8742/2013/2(5)/P44/3/$31.00 The Electrochemical Society  

E-Print Network [OSTI]

Electrically Confined Quantum Dot Intersubband Optoelectronic Devices Wei Wu, Dibyendu Dey, Omer G 60208 email: hmohseni@ece.northwestern.edu Intersubband optoelectronic devices such as mid

Mohseni, Hooman

454

2011 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimAdv. Mater. 2011, XX, 17 1 www.advmat.de  

E-Print Network [OSTI]

cost-effective integration of in- frared optoelectronic devices with well-established silicon been able to produce the high quality electronic material needed in optoelectronic devices, since

Atwater, Harry

455

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2000. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

456

Virginia Tech College of Science Faculty Position in Nanoscience  

E-Print Network [OSTI]

Cambridge University Press, Cambridge, 1972). S.L. Chuang, Physics of Optoelectronic Devices (Wiley, New York, 1995). P. Bhattacharya, Semiconductor Optoelectronic Devices (Prentice Hall, Englewood Cliffs

Virginia Tech

457

Published: July 20, 2011 r 2011 American Chemical Society 3033 dx.doi.org/10.1021/am200541p |ACS Appl. Mater. Interfaces 2011, 3, 30333041  

E-Print Network [OSTI]

output couplers for far-infrared lasers W. A. Bailey, Jr. Photonics and Optoelectronic Devices, Massachusetts 01854 W. D. Goodhue Photonics and Optoelectronic Devices Fabrication Laboratory, University

Ciobanu, Cristian

458

DOI: 10.1126/science.1214355 , 611 (2011);334Science  

E-Print Network [OSTI]

Cambridge University Press, Cambridge, 1972). S.L. Chuang, Physics of Optoelectronic Devices (Wiley, New York, 1995). P. Bhattacharya, Semiconductor Optoelectronic Devices (Prentice Hall, Englewood Cliffs

Bedwell, David M.

459

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2012. One company in Utah  

E-Print Network [OSTI]

consumed was used in integrated circuits (ICs). Optoelectronic devices, which include laser diodes, light. Optoelectronic devices were used in areas such as aerospace, consumer goods, industrial equipment, medical

460

COURSE SYLLABUS OSE 4470 FALL 2014 `FIBER-OPTIC COMMUNICATIONS'  

E-Print Network [OSTI]

of optical fiber communication systems including the optoelectronic devices used in transmitters) Optoelectronic devices used in transmitters, receivers, and multiplexers. 3) Design of the overall communication

Van Stryland, Eric

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2008. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

462

Hybrid silicon integration R. Jones H. D. Park A. W. Fang J. E. Bowers O. Cohen  

E-Print Network [OSTI]

Film Fabrications and Optoelectronic Devices Integration for Fully Embedded Board-Level Optical film with integrated optoelectronic devices (vertical-cavity surface- emitting laser (VCSEL) and p

Bowers, John

463

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2005. One company in Utah  

E-Print Network [OSTI]

circuits. Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

464

Subband gap impact ionization and excitation in carbon nanotube transistors  

E-Print Network [OSTI]

nanomaterials, semiconductor and optoelectronic devices, lasers and their applications. The specialization ELEC 462 Optoelectronic Devices PHYS 302 Intermediate Electrodynamics PHYS 311 Introduction to Quantum

Alam, Muhammad A.

465

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2007. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

466

PHOTONIC ATM FRONT-END PROCESSOR OBJECTIVES  

E-Print Network [OSTI]

components require active temperature stabilization for optimum performance. Most optoelectronic devices used to be monolithically integrated with optoelectronic devices, thereby considerably reducing size and cost constraints [2

Chao, Jonathan

467

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2009. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

468

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2010. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

469

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1999. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

470

Received 23 Apr 2013 | Accepted 29 Aug 2013 | Published 25 Sep 2013 Performance enhancement of metal nanowire  

E-Print Network [OSTI]

for window electrodes in solid- state optoelectronic devices. However, the catalytic activity to redox as window electrodes in optoelectronic devices. However, there exist major technical issues associated

Cui, Yi

471

Specialization Area Courses 2014-2015 ECE undergraduate degrees are organized around a core of required courses and a selection of elective courses from four  

E-Print Network [OSTI]

. The waveguides presented herein provide a feasible solution to bridge discrete optoelectronic devices having various optoelectronic devices [9]­[11]. However, there is no existing optoelec- tronic

472

Experimental and Computational Thermochemical Study of 2-and 3-Thiopheneacetic Acid Methyl Esters  

E-Print Network [OSTI]

, biodiagnostics, electronic and optoelectronic devices, and conductive polymers. The present study reports found widespread use in modern drug design,3 biodiagnostics,4 electronic and optoelectronic devices,5

Chickos, James S.

473

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2011. One company in Utah  

E-Print Network [OSTI]

consumed was used in integrated circuits (ICs). Optoelectronic devices, which include laser diodes, light% was used in research and development, specialty alloys, and other applications. Optoelectronic devices were

474

Study of GaN:Eu3+ Thin Films Deposited by Metallorganic  

E-Print Network [OSTI]

as an advantageous architecture for transparent electrodes in optoelectronic devices due primarily to high characteristics of electrodes in optoelectronic devices and in supercapactiors, we introduced oxide thin films

McKittrick, Joanna

475

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1997. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

476

NATURE PHYSICS | VOL 8 | AUGUST 2012 | www.nature.com/naturephysics 581 news & views  

E-Print Network [OSTI]

limit of light will be crucial for combining nanoelectronics and optoelectronic devices as the backbone of optoelectronic devices, with applications as diverse as light harvesting, photodetectors

Loss, Daniel

477

accurate short read: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Binocular Disparity in Dyslexic CiteSeer Summary: Children with developmental dyslexia show reading impairment compared to their peers, despite being matched on IQ,...

478

als7 open reading: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Binocular Disparity in Dyslexic CiteSeer Summary: Children with developmental dyslexia show reading impairment compared to their peers, despite being matched on IQ,...

479

Reading Municipal Light Department- Business Lighting Rebate Program  

Broader source: Energy.gov [DOE]

Reading Municipal Light Department (RMLD) offers incentives for non-residential customers to install energy efficient lights and sensors in existing facilities. In addition to rebates for the...

480

Reading Merleau-Ponty: Cognitive science, pathology and transcendental phenomenology.  

E-Print Network [OSTI]

??Master of Philosophy (Dept. of Philosophy)%%%This thesis explores the evolution of the way the Phenomenology of Perception is read for the purpose of determining its (more)

Tauber, Justin

2007-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "optoelectronic devices read" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Microbiopsy/precision cutting devices  

DOE Patents [OSTI]

Devices are disclosed for performing tissue biopsy on a small scale (microbiopsy). By reducing the size of the biopsy tool and removing only a small amount of tissue or other material in a minimally invasive manner, the risks, costs, injury and patient discomfort associated with traditional biopsy procedures can be reduced. By using micromachining and precision machining capabilities, it is possible to fabricate small biopsy/cutting devices from silicon. These devices can be used in one of four ways (1) intravascularly, (2) extravascularly, (3) by vessel puncture, and (4) externally. Additionally, the devices may be used in precision surgical cutting. 6 figs.

Krulevitch, P.A.; Lee, A.P.; Northrup, M.A.; Benett, W.J.

1999-07-27T23:59:59.000Z

482

Microbiopsy/precision cutting devices  

DOE Patents [OSTI]

Devices for performing tissue biopsy on a small scale (microbiopsy). By reducing the size of the biopsy tool and removing only a small amount of tissue or other material in a minimally invasive manner, the risks, costs, injury and patient discomfort associated with traditional biopsy procedures can be reduced. By using micromachining and precision machining capabilities, it is possible to fabricate small biopsy/cutting devices from silicon. These devices can be used in one of four ways 1) intravascularly, 2) extravascularly, 3) by vessel puncture, and 4) externally. Additionally, the devices may be used in precision surgical cutting.

Krulevitch, Peter A. (Pleasanton, CA); Lee, Abraham P. (Walnut Creek, CA); Northrup, M. Allen (Berkeley, CA); Benett, William J. (Livermore, CA)

1999-01-01T23:59:59.000Z

483

Automated control of microfluidics devices.  

E-Print Network [OSTI]

??In order for microfluidics devices to be marketable, they must be inexpensive and easy to use. Two projects were pursued in this study for this (more)

Gerstel, Ian.

2010-01-01T23:59:59.000Z

484

Structured wafer for device processing  

SciTech Connect (OSTI)

A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.

Okandan, Murat; Nielson, Gregory N

2014-11-25T23:59:59.000Z

485

Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54??m  

SciTech Connect (OSTI)

Erbium-doped silicon-rich nitride electroluminescent thin-films emitting at 1.54??m have been fabricated and integrated within a metal-oxide-semiconductor structure. By gradually varying the stoichiometry of the silicon nitride, we uncover the role of silicon excess on the optoelectronic properties of devices. While the electrical transport is mainly enabled in all cases by Poole-Frenkel conduction, power efficiency and conductivity are strongly altered by the silicon excess content. Specifically, the increase in silicon excess remarkably enhances the conductivity and decreases the charge trapping; however, it also reduces the power efficiency. The main excitation mechanism of Er{sup 3+} ions embedded in silicon-rich nitrides is discussed. The optimum Si excess that balances power efficiency, conductivity, and charge trapping density is found to be close to 16%.

Ramrez, J. M., E-mail: jmramirez@el.ub.edu; Berencn, Y.; Garrido, B. [MIND-IN2UB, Department Electrnica, Universitat de Barcelona, Mart i Franqus 1, Barcelona 08028 (Spain); Cueff, S. [Institut des Nanotechnologies de Lyon, cole Centrale de Lyon, cully 69134 (France); Labb, C. [Centre de Recherche sur les Ions, les Matriaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France)

2014-08-28T23:59:59.000Z

486

Development of a custom monolithic device for data acquisition from a scintillating calorimeter at the superconducting super collider  

SciTech Connect (OSTI)

A clock-driven continuous sequential write/random read data acquisition architecture for a scintillating calorimeter at the SSC is presented. Simplicity of design and operation as well as potentially dead time-less operation are the motivations of this effort. The architecture minimizes the number of fast control signals, thereby reducing pickup from digital control lines by sensitive analog circuits in the front-end device. This architecture also reduces the logic necessary on the front-end device improving reliability and easing design and operation. Operation and design of the front-end device are discussed. 3 refs., 7 figs.

Ekenberg, T.; Dawson, J.W.; Talaga, R.L.; Stevens, A.E.; Haberichter, W.N.

1991-01-01T23:59:59.000Z

487

Temperature differential detection device  

DOE Patents [OSTI]

A temperature differential detection device for detecting the temperature differential between predetermined portions of a container wall is disclosed as comprising a Wheatstone bridge circuit for detecting resistance imbalance with a first circuit branch having a first elongated wire element mounted in thermal contact with a predetermined portion of the container wall, a second circuit branch having a second elongated wire element mounted in thermal contact with a second predetermined portion of a container wall with the wire elements having a predetermined temperature-resistant coefficient, an indicator interconnected between the first and second branches remote from the container wall for detecting and indicating resistance imbalance between the first and second wire elements, and connector leads for electrically connecting the wire elements to the remote indicator in order to maintain the respective resistance value relationship between the first and second wire elements. The indicator is calibrated to indicate the detected resistance imbalance in terms of a temperature differential between the first and second wall portions. 2 figs.

Girling, P.M.

1986-04-22T23:59:59.000Z

488

Mobile Device Policy & Program Considerations  

E-Print Network [OSTI]

Page 1 Mobile Device Policy & Program Considerations To BYOD or not to BYOD (bring to manage the use of mobile devices within their corporate resources. Every business will naturally have different mobility requirements, and developing a policy in the first place, let alone an appropriate policy

Fisher, Kathleen

489

E-Print Network 3.0 - array devices high-dynamic Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

at Stony Brook, Department of Electrical Engineering and Computer Engineering, Optoelectronics Research Group Collection: Engineering 2 A NOVEL AVALANCHE-FREE SINGLE PHOTON...

490

Automatic Mechetronic Wheel Light Device  

DOE Patents [OSTI]

A wheel lighting device for illuminating a wheel of a vehicle to increase safety and enhance aesthetics. The device produces the appearance of a "ring of light" on a vehicle's wheels as the vehicle moves. The "ring of light" can automatically change in color and/or brightness according to a vehicle's speed, acceleration, jerk, selection of transmission gears, and/or engine speed. The device provides auxiliary indicator lights by producing light in conjunction with a vehicle's turn signals, hazard lights, alarm systems, and etc. The device comprises a combination of mechanical and electronic components and can be placed on the outer or inner surface of a wheel or made integral to a wheel or wheel cover. The device can be configured for all vehicle types, and is electrically powered by a vehicle's electrical system and/or battery.

Khan, Mohammed John Fitzgerald (Silver Spring, MD)

2004-09-14T23:59:59.000Z

491

Minnesota Center for Reading ResearchResearchtoPolicyBrief  

E-Print Network [OSTI]

Minnesota Center for Reading ResearchResearchtoPolicyBrief Making Sense of Dyslexia What is Dyslexia? The American Psychiatric Association (2000) defined dyslexia as reading achievement that impairments. The term "dyslexia" is a medical term. Schools do not use the term "dyslexia." Instead, special

Ciocan-Fontanine, Ionut

492

The University of Reading Helen Dacre Evaluating pollution transport in  

E-Print Network [OSTI]

The University of Reading Helen Dacre Evaluating pollution transport in weather prediction models Outline Air pollution forecasting Offline forecasting Online forecasting Aim Overview of ETEX 2 case Conclusions and future work #12;The University of Reading Helen Dacre Offline Air Pollution Forecasting

Dacre, Helen

493

Reading Tea Leaves: How Humans Interpret Topic Models  

E-Print Network [OSTI]

Reading Tea Leaves: How Humans Interpret Topic Models Jonathan Chang Jordan Boyd-Graber Sean, Blei Reading Tea Leaves #12;Topic Models in a Nutshell From an input corpus words to topics Forget Red Light, Green Light: A 2-Tone L.E.D. to Simplify Screens Corpus Chang, Boyd-Graber, Wang, Gerrish

Boyd-Graber, Jordan

494

Reading the GL008 Revenue & Expense Activity report  

E-Print Network [OSTI]

Reading the GL008 Revenue & Expense Activity report Cognos FMS111 Reporting 7/23/13 - rb Reading the GL008 ­ job aid NEED HELP? Call 847-491-HELP consultant@northwestern.edu © 2013 Northwestern University Page 1 of 2 The GL008 Revenue and Expense Activity Report displays all transactions affecting

Shull, Kenneth R.

495

Reading the GL005 Summary Budget Status report  

E-Print Network [OSTI]

Reading the GL005 Summary Budget Status report Cognos FMS111 Reporting Reference Reading the GL005 University Page 1 of 2 The GL005 Summary Budget Status Report displays the budget amounts and remaining Project Budget Statement. This report pairs well with the related GL008 Revenue and Expense Activity

Shull, Kenneth R.

496

Read-out electronics for DC squid magnetic measurements  

DOE Patents [OSTI]

Read-out electronics for DC SQUID sensor systems, the read-out electronics incorporating low Johnson noise radio-frequency flux-locked loop circuitry and digital signal processing algorithms in order to improve upon the prior art by a factor of at least ten, thereby alleviating problems caused by magnetic interference when operating DC SQUID sensor systems in magnetically unshielded environments.

Ganther, Jr., Kenneth R. (Olathe, KS); Snapp, Lowell D. (Independence, MO)

2002-01-01T23:59:59.000Z

497

Split ring containment attachment device  

DOE Patents [OSTI]

A containment attachment device 10 for operatively connecting a glovebag 200 to plastic sheeting 100 covering hazardous material. The device 10 includes an inner split ring member 20 connected on one end 22 to a middle ring member 30 wherein the free end 21 of the split ring member 20 is inserted through a slit 101 in the plastic sheeting 100 to captively engage a generally circular portion of the plastic sheeting 100. A collar potion 41 having an outer ring portion 42 is provided with fastening means 51 for securing the device 10 together wherein the glovebag 200 is operatively connected to the collar portion 41.

Sammel, Alfred G. (Pittsburgh, PA)

1996-01-01T23:59:59.000Z

498

Polymer electronic devices and materials.  

SciTech Connect (OSTI)

Polymer electronic devices and materials have vast potential for future microsystems and could have many advantages over conventional inorganic semiconductor based systems, including ease of manufacturing, cost, weight, flexibility, and the ability to integrate a wide variety of functions on a single platform. Starting materials and substrates are relatively inexpensive and amenable to mass manufacturing methods. This project attempted to plant the seeds for a new core competency in polymer electronics at Sandia National Laboratories. As part of this effort a wide variety of polymer components and devices, ranging from simple resistors to infrared sensitive devices, were fabricated and characterized. Ink jet printing capabilities were established. In addition to promising results on prototype devices the project highlighted the directions where future investments must be made to establish a viable polymer electronics competency.

Schubert, William Kent; Baca, Paul Martin; Dirk, Shawn M.; Anderson, G. Ronald; Wheeler, David Roger

2006-01-01T23:59:59.000Z

499

Personal cooling air filtering device  

DOE Patents [OSTI]

A temperature modification system for modifying the temperature of fluids includes at least one thermally conductive carbon foam element, the carbon foam element having at least one flow channel for the passage of fluids. At least one temperature modification device is provided, the temperature modification device thermally connected to the carbon foam element and adapted to modify the temperature of the carbon foam to modify the temperature of fluids flowing through the flow channels. Thermoelectric and/or thermoionic elements can preferably be used as the temperature modification device. A method for the reversible temperature modification of fluids includes the steps of providing a temperature modification system including at least one thermally conductive carbon foam element having flow channels and at least one temperature modification device, and flowing a fluid through the flow channels.

Klett, James (Knoxville, TN); Conway, Bret (Denver, NC)

2002-08-13T23:59:59.000Z

500

Devices for collecting chemical compounds  

DOE Patents [OSTI]

A device for sampling chemical compounds from fixed surfaces and related methods are disclosed. The device may include a vacuum source, a chamber and a sorbent material. The device may utilize vacuum extraction to volatilize the chemical compounds from a fixed surface so that they may be sorbed by the sorbent material. The sorbent material may then be analyzed using conventional thermal desorption/gas chromatography/mass spectrometry (TD/GC/MS) instrumentation to determine presence of the chemical compounds. The methods may include detecting release and presence of one or more chemical compounds and determining the efficacy of decontamination. The device may be useful in collection and analysis of a variety of chemical compounds, such as residual chemical warfare agents, chemical attribution signatures and toxic industrial chemicals.

Scott, Jill R; Groenewold, Gary S

2013-12-24T23:59:59.000Z