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1

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

2

Phase-change optical recording materials based on GeSb  

Science Journals Connector (OSTI)

GeSb based materials are investigated for phase-change optical recording. Physical properties and amorphization / crystallization behavior are determined. Recording characteristics are...

Dimitrov, Dimitre

3

Electrical, optical, and thermal properties of Sn-doped phase change material Ge2Sb2Te5  

Science Journals Connector (OSTI)

In this article, effect of Sn on the electrical, optical, and thermal properties of Ge2Sb2Te5 is studied. Ge2Sb2Te5, Ge1.55Sb2Te5Sn0.45, and Ge1.1Sb2Te5Sn0.9...alloys are prepared by melt quenching technique and ...

Gurinder Singh; Aman Kaura; Monika Mukul; S. K. Tripathi

2013-01-01T23:59:59.000Z

4

Optical nonlinear absorption characteristics of Sb{sub 2}Se{sub 3} nanoparticles  

SciTech Connect

In this work, we report for the first time, the nonlinear optical absorption properties of antimony selenide (Sb{sub 2}Se{sub 3}) nanoparticles synthesized through solvothermal route. X-ray diffraction results revealed the crystalline nature of the nanoparticles. Electron microscopy studies revealed that the nanoparticles are in the range of 10 - 40 nm. Elemental analysis was performed using EDAX. By employing open aperture z-scan technique, we have evaluated the effective two-photon absorption coefficient of Sb{sub 2}Se{sub 3} nanoparticles to be 5e-10 m/W at 532 nm. These nanoparticles exhibit strong intensity dependent nonlinear optical absorption and hence could be considered to have optical power limiting applications in the visible range.

Muralikrishna, Molli, E-mail: muralikrishnamolli@sssihl.edu.in; Kiran, Aditha Sai, E-mail: muralikrishnamolli@sssihl.edu.in; Ravikanth, B., E-mail: muralikrishnamolli@sssihl.edu.in; Sowmendran, P., E-mail: muralikrishnamolli@sssihl.edu.in; Muthukumar, V. Sai, E-mail: muralikrishnamolli@sssihl.edu.in; Venkataramaniah, Kamisetti, E-mail: muralikrishnamolli@sssihl.edu.in [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthinilayam-515 134 (India)

2014-04-24T23:59:59.000Z

5

Optical characteristics of pulsed laser deposited Ge-Sb-Te thin films studied by spectroscopic ellipsometry  

SciTech Connect

Pulsed laser deposition technique was used for the fabrication of (GeTe){sub 1-x}(Sb{sub 2}Te{sub 3}){sub x} (x = 0, 0.33, 0.50, 0.66, and 1) amorphous thin films. Scanning electron microscopy with energy-dispersive x-ray analysis, x-ray diffraction, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (rocksaltlike) layers. In order to extract optical functions of the films, the Cody-Lorentz model was applied for the analysis of ellipsometric data. Fitted sets of Cody-Lorentz model parameters are discussed in relation with chemical composition and the structure of the layers. The GeTe component content was found to be responsible for the huge optical functions and thickness changes upon amorphous-to-fcc phase transition.

Nemec, P. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Prikryl, J.; Frumar, M. [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Nazabal, V. [Equipe Verres et Ceramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Universite de Rennes 1, 35042 Rennes Cedex (France)

2011-04-01T23:59:59.000Z

6

Structural and optical properties of Sb{sub 2}S{sub 3} nanocrystals in glass  

SciTech Connect

In this work conventional solid state precipitation method is adopted to fabricate Sb{sub 2}S{sub 3} nanocrystals in glass. The glass composition is optimized for proper host glass matrix to grow antimony trisulphide semiconductor quantum dots. The dot size is modified by heat treatment of glass samples in the temperature range from 550°C to 700°C for various time durations. Structural studies are carried out by X-ray diffraction and transmission electron microscopy and nanoparticles with size ranges from 8 nm to 70 nm are obtained. Quantum dots so grown were further characterized by optical absorption spectroscopy and a blue shift is observed for absorption edge energy that conform the quantum confinement effect.

Mishra, Rakesh K., E-mail: mishrarake@gmail.com; Kashyap, Raman, E-mail: mishrarake@gmail.com; Vedeshwar, A. G., E-mail: mishrarake@gmail.com; Tandon, R. P., E-mail: mishrarake@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 1-10007 (India)

2014-04-24T23:59:59.000Z

7

Electronic and optical properties of TiCoSb under different pressures  

SciTech Connect

The electronic structure and optical properties of TiCoSb are studied by the first-principles calculation. It is found that the band gaps increase with the pressure increasing. It is noted that the increase of the band gap is due to the electrons of Ti 3d and Co 3d of the valence band (VB) shifting away from the Fermi level. Our calculation indicates that TiCoSb has the large density of state near the Fermi level; moreover, the changes of the density of states near the Fermi level mainly are caused by Ti 3d and Co 3d under the different pressures. It is noted that the absorption edge increases with an increase of pressure. As pressure increases, the static dielectric constants {epsilon}{sub 1}(0) decrease. All peaks of the imaginary part of the dielectric function {epsilon}{sub 2}({omega}) move towards higher energies within increasing pressure. - Graphical abstract: The first peak positions of the absorption spectrum increase and shift the high energy with an increase of pressure. The buleshift of the absorption edge could be observed. Highlights: Black-Right-Pointing-Pointer It is noted that the increase of the band gap is due to the electrons of Ti 3d and Co 3d of VB moving away from the Fermi level. Black-Right-Pointing-Pointer It is noted that the absorption edge increases with an increase of pressure. Black-Right-Pointing-Pointer As pressure increases, the static dielectric constant {epsilon}{sub 1}(0) decreases. Black-Right-Pointing-Pointer All peaks of the imaginary part of the dielectric function {epsilon}{sub 2}({omega}) move to wards higher energies within creasing pressure.

Xu Bin, E-mail: hnsqxb@163.com [Department of Mathematics and Information Sciences, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Zhang Jing [Department of Mathematics and Information Sciences, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Liang Jianchu [Department of electronic science, Huizhou University, Guangdong 516001 (China); Gao Guoying; Yi Lin [Department of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

2012-08-15T23:59:59.000Z

8

Small-sized Mach-Zehnder Interferometer Optical Switch Using Thin Film Ge2Sb2Te5 Phase-change Material  

Science Journals Connector (OSTI)

Small-sized Mach-Zehnder Interferometer optical switch using Ge2Sb2Te5 thin films was fabricated. Two thin films of 1-?m-square were sufficient for switching. The switching...

Moriyama, Takumi; Kawashima, Hitoshi; Kuwahara, Masashi; Wang, Xiaomin; Asakura, Hideaki; Tsuda, Hiroyuki

9

Ab initio density functional theory investigation of the structural, electronic and optical properties of Ca{sub 3}Sb{sub 2} in hexagonal and cubic phases  

SciTech Connect

A density functional theory study of structural, electronical and optical properties of Ca{sub 3}Sb{sub 2} compound in hexagonal and cubic phases is presented. In the exchange–correlation potential, generalized gradient approximation (PBE-GGA) has been used to calculate lattice parameters, bulk modulus, cohesive energy, dielectric function and energy loss spectra. The electronic band structure of this compound has been calculated using the above two approximations as well as another form of PBE-GGA, proposed by Engle and Vosko (EV-GGA). It is found that the hexagonal phase of Ca{sub 3}Sb{sub 2} has an indirect gap in the ??N direction; while in the cubic phase there is a direct-gap at the ? point in the PBE-GGA and EV-GGA. Effects of applying pressure on the band structure of the system studied and optical properties of these systems were calculated. - Graphical abstract: A density functional theory study of structural, electronic and optical properties of Ca{sub 3}Sb{sub 2} compound in hexagonal and cubic phases is presented. Display Omitted - Highlights: • Physical properties of Ca{sub 3}Sb{sub 2} in hexagonal and cubic phases are investigated. • It is found that the hexagonal phase is an indirect gap semiconductor. • Ca{sub 3}Sb{sub 2} is a direct-gap semiconductor at the ? point in the cubic phase. • By increasing pressure the semiconducting band gap and anti-symmetry gap are decreased.

Arghavani Nia, Borhan, E-mail: b.arghavani@gmail.com [Department of Physics, Kermanshah Branch, Islamic Azad University, Kermanshah (Iran, Islamic Republic of); Sedighi, Matin [Department of Physics, Kermanshah Branch, Islamic Azad University, Kermanshah (Iran, Islamic Republic of); Shahrokhi, Masoud [Young Researchers and Elite Club, Kermanshah Branch, Islamic Azad University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Nano-Science and Nano-Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physics Science Research Laboratory, Department of Nano-Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-1795, Tehran (Iran, Islamic Republic of)

2013-11-15T23:59:59.000Z

10

Optical properties change of Ge{sub 12.5}Sb{sub 25}Se{sub 62.5} thin films by laser irradiation  

SciTech Connect

The thermally evaporated Ge{sub 12.5}Sb{sub 25}Se{sub 62.5} thin films of 800 nm thickness were subjected to light exposure for photo induced studies. The as-prepared and illuminated thin films were studied by X-ray diffraction, Fourier Transform Infrared Spectroscopy and X-ray Photoelectron Spectroscopy. The optical band gap was increased due to photo induced effects along with the decrease in disorder. These optical properties changes are due to the change of homopolar bond densities. The core level peak shifting in XPS spectra supports the optical changes happening in the film due to light exposure.

Naik, Ramakanta [Physics Department, Utkal University, Bhubaneswar, Odisha, 751004 (India) and Physics Department, Indian Institute of Science, Bangalore, 560012 (India); Vinod, E. M.; Kumar, C.; Ganesan, R. [Physics Department, Indian Institute of Science, Bangalore, 560012 (India)

2013-02-05T23:59:59.000Z

11

E-Print Network 3.0 - amorphous ge-sb-te films Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

times in GeSbTe films irradiated... commercial phase-change optical recording systems, such as those based on GeSbTe Ref. 3 or AglnSbTe,4 use... the crystalline and...

12

Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory  

SciTech Connect

Effects of GaSb doping on phase change characteristics of Ge-Sb-Te material are investigated by in situ resistance and x-ray diffraction measurement, optical spectroscopy, and x-ray photoelectron spectroscopy. The crystallization temperature and data retention of Ge-Sb-Te material increase significantly by the addition of GaSb, which results from the high thermal stability of amorphous GaSb. In addition, GaSb-doped Ge-Sb-Te material exhibits faster crystallization speed due to the change in electronic states as a result of the formation of chemical bonds with Ga element. Incorporation of GaSb is highly effective way to enhance the comprehensive performance of Ge-Sb-Te material for phase change memory.

Lu, Yegang [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China) [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Graduate School of Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Zhonghua; Song, Sannian; Cheng, Limin; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)] [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Shen, Xiang; Wang, Guoxiang; Dai, Shixun [Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)] [Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)

2013-06-17T23:59:59.000Z

13

RAS ANNUAL REPORT 2002:  

Science Journals Connector (OSTI)

......ESO; the PPARC Science Committee funding...replacement. 11. Education Committee The Mary...video tapes, posters or optical equipment...Association for Science Education's annual meeting...good support. Science Year 2001. The......

The RAS Annual General Meeting

2002-10-01T23:59:59.000Z

14

Targeting Ras in Myeloid Leukemias  

Science Journals Connector (OSTI)

...which are activated as a downstream consequence of ligand binding to growth factor receptors...case of mutant Ras due to structural consequences of substations at codons 12, 13, and...as a therapeutic target in cancer. In truth, these drugs do not significantly inhibit...

Benjamin S. Braun and Kevin Shannon

2008-04-15T23:59:59.000Z

15

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

16

Vertical cavity surface emitting laser emitting at 1.56 microns with AlGaAsSb/AlAsSb distributed Bragg reflectors  

SciTech Connect

The authors report 77K operation of an optically pumped vertical cavity surface emitting laser with an Sb-based cavity. The structure consists of 15 and 20 pair AlGaAsSb/AlAsSb top and bottom reflectors and a bulk InGaAs active region.

Blum, O.; Klem, J.F.; Lear, K.L.; Vawter, G.A.; Kurtz, S.R.

1998-07-01T23:59:59.000Z

17

Band gap tuning and optical absorption in type-II InAs/GaSb mid infrared short period superlattices: 14 bands K Dot-Operator p study  

SciTech Connect

The MBE growth of short-period InAs/GaSb type-II superlattice structures, varied around 20.5 A InAs/24 A GaSb were [J. Applied physics, 96, 2580 (2004)] carried out by Haugan et al. These SLs were designed to produce devices with an optimum mid-infrared photoresponse and a sharpest photoresponse cutoff. We have used a realistic and reliable 14-band k.p formalism description of the superlattice electronic band structure to calculate the absorption coefficient in such short-period InAs/GaSb type-II superlattices. The parameters for this formalism are known from fitting to independent experiments for the bulk materials. The band-gap energies are obtained without any fitting parameters, and are in good agreement with experimental data.

AbuEl-Rub, Khaled M. [Department of Applied Physical Sciences, Jordan University of Science and Technology Irbid, 21141 (Jordan)

2012-09-06T23:59:59.000Z

18

College of Health Sciences RAS Radiation Sciences  

E-Print Network (OSTI)

; excitation and ionization processes; selected nuclear reactions; basic radiation detection and dosimetry, and nuclear medical physics. Prereq or concur: RM/PHY 472G or consent of instructor. (Same as PHY/RM 546.) RAS 601 ADVANCED RADIATION DOSIMETRY. (2

MacAdam, Keith

19

E-Print Network 3.0 - activated ras alters Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Biology and Medicine ; Chemistry 3 R342 Dispatch Ras effectors: Buying shares in Ras plc Summary: activated Ras can regulate phosphoinositide-specific phospholipase C (PLC) has...

20

E-Print Network 3.0 - activating ras mutations Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

Collection: Biology and Medicine 3 R342 Dispatch Ras effectors: Buying shares in Ras plc Summary: of hamster fibroblast proliferation by mutated ras oncogenes is not mediated...

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy  

SciTech Connect

The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superlinear luminescence and increased optical power as a function of the pump current in the photon energy range of 0.6-0.8 eV are observed at temperatures of T = 77 and 300 K. The photoelectric, current-voltage, and capacitance characteristics of these heterostructures are studied in detail. The photosensitivity is examined with photodetectors operating in the photovoltaic mode in the spectral range of 0.9-2.0 {mu}m. The sensitivity maximum at room temperature is observed at a wavelength of 1.55 {mu}m. The quantum efficiency, detectivity, and response time of the photodetectors were estimated. The quantum efficiency and detectivity at the peak of the photosensitivity spectrum are as high as {eta} = 0.6-0.7 and D{sub {lambda}max}{sup *} = (5-7) Multiplication-Sign 10{sup 10} cm Hz{sup 1/2} W{sup -1}, respectively. The photodiode response time determined as the rise time of the photoresponse pulse from 0.1 to the level 0.9 is 100-200 ps. The photodiode transmission bandwidth is 2-3 GHz. Photodetectors with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates are promising foruse in heterodyne detection systems and in information technologies.

Mikhailova, M. P.; Andreev, I. A., E-mail: igor@iropt9.ioffe.ru; Ivanov, E. V.; Konovalov, G. G.; Grebentshikova, E. A.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Hulicius, E.; Hospodkova, A.; Pangrac, Y. [Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)] [Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)

2013-08-15T23:59:59.000Z

22

GaInAsSb/A1GaAsSb/Sb Thermophotovoltaic Devices With an Internal Back-Surface Reflector Formed by Wafer Bonding  

SciTech Connect

A novel implementation for GAInAsSb/AlGaAsSb/GaSb TPV cells with an internal back-surface reflector (BSR) formed by wafer bonding to GaAs is demonstrated. The SiO{sub x}/Ti/Au internal BSR enhances optical absorption within the device, while the dielectric layer provides electrical isolation. This configuration has the potential to improve TPV device performance; is compatible with monolithic series-interconnection of TPV cells for building voltage; and can mitigate the requirements of filters used for front-surface spectral control. At a short-circuit density of 0.4 A/cm{sup 2}, the open-circuit voltage of a single TPV cell is 0.2 V, compared to 0.37 and 1.8 V for 2- and 10-junction series-interconnected TPV cells, respectively.

C.A. Wang; R.K. Huang; D.A. Shiau; M.K. Connors; P.G. Murphy; P.W. O'brien; A.C. Anderson; D.M. DePoy; G. Nichols; M.N. Palmasiano

2002-12-18T23:59:59.000Z

23

Three Separable Domains Regulate GTP-Dependent Association of H-ras with the Plasma Membrane  

Science Journals Connector (OSTI)

...GFP-H-rasG12V generate a repulsive force that weakens the association of H-ras...GTP loading might regulate the repulsive force exerted by the N-terminal region on H-ras...binding to H-ras increasing the repulsive force. Thus, H-ras exhibits GTP-dependent...

Barak Rotblat; Ian A. Prior; Cornelia Muncke; Robert G. Parton; Yoel Kloog; Yoav I. Henis; John F. Hancock

2004-08-01T23:59:59.000Z

24

E-Print Network 3.0 - activated ras signalling Sample Search...  

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Collection: Biology and Medicine 5 R342 Dispatch Ras effectors: Buying shares in Ras plc Summary: . In this state, Ras is consti- tutively active and can transmit signals for...

25

1  

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National Laboratory Richland, Washington and Institute of Atmospheric Optics SB RAS Russia Introduction The problem of stochastic radiative transfer in clouds has been aimed at...

26

On Correction of Diffuse Radiation Measured by MFRSR  

NLE Websites -- All DOE Office Websites (Extended Search)

Measured by MFRSR T. B. Zhuravleva Institute of Atmospheric Optics, SB RAS Tomsk, Russia M. A. Sviridenkov and P. P. Anikin A. M. Obukhov Institute of Atmospheric Physics, RAS...

27

Energy level spectroscopy of InSb quantum wells using quantum-well LED emission  

Science Journals Connector (OSTI)

We have investigated the low-temperature optical properties of InSb quantum-well (QW) light-emitting diodes, with different barrier compositions, as a function of well width. Three devices were studied: QW1 had a 20 nm undoped InSb quantum well with a barrier composition of Al0.143In0.857Sb, QW2 had a 40 nm undoped InSb well with a barrier composition of Al0.077In0.923Sb, and QW3 had a 100 nm undoped InSb well with a barrier composition of Al0.025In0.975Sb. For QW1, the signature of two transitions (CB1-HH1 and CB1-HH2) can be seen in the measured spectrum, whereas for QW2 and QW3 the signature of a large number of transitions is present in the measured spectra. In particular transitions to HH2 can be seen, the first time this has been observed in AlInSb/InSb heterostructures. To identify the transitions that contribute to the measured spectra, the spectra have been simulated using an eight-band k.p calculation of the band structure together with a first-order time-dependent perturbation method (Fermi golden rule) calculation of spectral emittance, taking into account broadening. In general there is good agreement between the measured and simulated spectra. For QW2 we attribute the main peak in the experimental spectrum to the CB2-HH1 transition, which has the highest overall contribution to the emission spectrum of QW2 compared with all the other interband transitions. This transition normally falls into the category of “forbidden transitions,” and in order to understand this behavior we have investigated the momentum matrix elements, which determine the selection rules of the problem.

T. G. Tenev; A. Palyi; B. I. Mirza; G. R. Nash; M. Fearn; S. J. Smith; L. Buckle; M. T. Emeny; T. Ashley; J. H. Jefferson; C. J. Lambert

2009-02-02T23:59:59.000Z

28

Energy-level and lifetime measurements for Sb iv and Sb v  

Science Journals Connector (OSTI)

A study of the beam-foil spectrum produced by a 1-MeV beam of antimony ions has yielded lifetimes for nine lowlying terms of Sb iv and six of Sb v. Decay-curve analysis incorporating...

Pinnington, E H; Ansbacher, W; Kernahan, J A; Gosselin, R N; Bahr, J L; Inamdar, A S

1985-01-01T23:59:59.000Z

29

Lattice thermal conductivity of Bi, Sb, and Bi-Sb alloy from first principles  

E-Print Network (OSTI)

Using first principles, we calculate the lattice thermal conductivity of Bi, Sb, and Bi-Sb alloys, which are of great importance for thermoelectric and thermomagnetic cooling applications. Our calculation reveals that the ...

Lee, Sangyeop

30

Transport properties in AlInSb/InAsSb heterostructures  

SciTech Connect

Based on theoretical studies of transport properties in InAsSb-based quantum well heterostructures, we propose a material design for InAsSb quantum well with AlInSb barrier. Variation of electron mobility and two-dimensional electron gas concentration in Al{sub y}In{sub 1?y}Sb/InAs{sub 1?x}Sb{sub x} heterostructures over the compositional range of which InAsSb is fully strained to AlInSb are investigated, where impact from dislocation scattering could be minimized. In comparison with InAs and InSb based quantum well heterostructures, InAsSb is advantageous in achieving the highest electron mobility despite of alloy disorder scattering. The maximum mobility of 37?000 cm{sup 2}/V s is attainable in 15?nm InAs{sub 0.2}Sb{sub 0.8} quantum well with Al{sub 0.24}In{sub 0.76}Sb barrier and there is great potential for further improvement. Our InAsSb based quantum well heterostructure is proved to be a robust structure for high-speed applications.

Zhang, Yuwei; Zhang, Yang, E-mail: zhang-yang@semi.ac.cn; Wang, Chengyan; Zeng, Yiping [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2013-12-28T23:59:59.000Z

31

Method of making an InAsSb/InAsSbP diode lasers  

DOE Patents (OSTI)

InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 {micro}m to 5 {micro}m is possible by varying the ratio of As:Sb in the active layer. 9 figs.

Razeghi, M.

1997-08-19T23:59:59.000Z

32

Mechanism of H-ras Oncogene Activation in Mouse Squamous Carcinoma Induced by an Alkylating Agent  

Science Journals Connector (OSTI)

...tumors, DMBA activated H-ras in at least 75...carcinoma model (14), H-ras was activated in...contains an ethylcarbonyl bridge between the N-l and N...the l^V*-etheno- bridge-adenine adduct formed...the middle adenine of the H-ras 61st codon. ACKNOWLEDGMENTS...

Anne E. Hochwalt; Jerome J. Solomon; and Seymour J. Garte

1988-02-01T23:59:59.000Z

33

InGaAsSb thermophotovoltaic diode physics evaluation  

SciTech Connect

The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

1998-06-01T23:59:59.000Z

34

Optical  

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Optical Optical fiber-based single-shot picosecond transient absorption spectroscopy Andrew R. Cook a͒ and Yuzhen Shen Department of Chemistry, Brookhaven National Laboratory, Upton, New York 11973, USA ͑Received 27 January 2009; accepted 29 May 2009; published online 17 July 2009͒ A new type of single-shot transient absorption apparatus is described based on a bundle of optical fibers. The bundle contains 100 fibers of different lengths, each successively giving ϳ15 ps longer optical delay. Data are collected by imaging light from the exit of the bundle into a sample where it is overlapped with an electron pulse or laser excitation pulse, followed by imaging onto a charge coupled device ͑CCD͒ detector where the intensity of light from each fiber is measured simultaneously. Application to both ultrafast pump-probe spectroscopy and pulse radiolysis is demonstrated. For pulse

35

Optics  

Science Journals Connector (OSTI)

Optical components such as lenses, mirrors and diffraction gratings are widely used in many inspection systems. These include not only those for visual inspection with CCD cameras, but also in areas of distanc...

C. Loughlin

1993-01-01T23:59:59.000Z

36

Ohmic contacts to n-GaSb  

E-Print Network (OSTI)

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

37

Reversible Switching of an Optical Gate Using Phase-Change Material and Si Waveguide  

Science Journals Connector (OSTI)

Optical gate switch that uses Ge2Sb2Te5phase-change material was fabricated and the reversible switching has been...

Ikuma, Yuichiro; Shoji, Yuya; Kuwahara, Masashi; Wang, Xiaomin; Kintaka, Kenji; Kawashima, Hitoshi; Tanaka, Daiki; Tsuda, Hiroyuki

38

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer  

SciTech Connect

The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

Vajargah, S. Hosseini; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada) [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)] [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Preston, J. S.; Kleiman, R. N. [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada) [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2013-09-21T23:59:59.000Z

39

Neutron radiation can activate K-ras via a point mutation in codon 146 and induces a different spectrum of ras mutations than does gamma radiation.  

Science Journals Connector (OSTI)

research-article Research Article Neutron radiation can activate K-ras via a point...School of Medicine, New York 10016. Neutron radiation is known to produce tumors in...RF/J mice by a single acute dose of neutron irradiation. Activated ras genes were...

S R Sloan; E W Newcomb; A Pellicer

1990-01-01T23:59:59.000Z

40

ACCELERATED PROCESSING OF SB4 AND PREPARATION FOR SB5 PROCESSING AT DWPF  

SciTech Connect

The Defense Waste Processing Facility (DWPF) initiated processing of Sludge Batch 4 (SB4) in May 2007. SB4 was the first DWPF sludge batch to contain significant quantities of HM or high Al sludge. Initial testing with SB4 simulants showed potential negative impacts to DWPF processing; therefore, Savannah River National Laboratory (SRNL) performed extensive testing in an attempt to optimize processing. SRNL's testing has resulted in the highest DWPF production rates since start-up. During SB4 processing, DWPF also began incorporating waste streams from the interim salt processing facilities to initiate coupled operations. While DWPF has been processing SB4, the Liquid Waste Organization (LWO) and the SRNL have been preparing Sludge Batch 5 (SB5). SB5 has undergone low-temperature aluminum dissolution to reduce the mass of sludge for vitrification and will contain a small fraction of Purex sludge. A high-level review of SB4 processing and the SB5 preparation studies will be provided.

Herman, C

2008-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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41

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer  

DOE Patents (OSTI)

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

Spahn, O.B.; Lear, K.L.

1998-03-10T23:59:59.000Z

42

Make It Work: Implementing SB 375  

E-Print Network (OSTI)

bridging of project and plan level review has been difficultStrengthening Plan-Level Review under SB 375 …………………………………that if an adequate plan-level review is conducted for a “

Altmaier, Monica; Barbour, Elisa; Eggleton, Christian; Gage, Jeffier; Hayter, Jason; Zahner, Ayrin

2009-01-01T23:59:59.000Z

43

Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices  

SciTech Connect

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

2003-06-16T23:59:59.000Z

44

Normal-incidence Sb/B{sub 4}C multilayer mirrors for the 80 A < {lambda} < 120 A wavelength range  

SciTech Connect

Periodic and aperiodic Sb/B4C multilayer structures have been theoretically calculated and synthesised for the first time for the application in soft X-ray optics in the 80 A < {lambda} < 120 A range. The reflection spectra of the periodic multilayer mirrors are measured using synchrotron radiation and laser plasma-generated radiation. The experimental spectra are theoretically interpreted with the inclusion of transition layers and substrate roughness. The density of antimony layers is supposedly {rho}{sub (Sb)} = 6.0 g cm{sup -3}, and the thickness of transition layers (if any) in the Sb/B4C multilayer structures does not exceed 10 A. A peak reflectivity of 19 % is attained at a wavelength of 85 A. An aperiodic mirror optimised for maximum uniform reflectivity in the 100 - 120 A range is tested employing the laser plasma radiation source. (x-ray optics)

Vishnyakov, E A; Voronov, D L; Gullikson, E M; Kondratenko, V V; Kopylets, I A; Luginin, M S; Pirozhkov, A S; Ragozin, Evgenii N; Shatokhin, A N

2013-07-31T23:59:59.000Z

45

The optimization of interfaces in InAsSb/InGaAs strained-layer superlattices grown by metal-organic chemical vapor deposition  

SciTech Connect

We have prepared InAsSb/InGaAs strained-layer superlattice (SLS) semiconductors by metal-organic chemical vapor deposition (MOCVD) under a variety of conditions. Presence of an InGaAsSb interface layer is indicated by x-ray diffraction patterns. Optimized growth conditions involved the use of low pressure, short purge times, and no reactant flow during the purges. MOCVD was used to prepare an optically pumped, single heterostructure InAsSb/InGaAs SLS/InPSb laser which emitted at 3.9 {mu}m with a maximum operating temperature of approximately 100 K.

Biefeld, R.M.; Baucom, K.C.; Kurtz, S.R.

1993-12-31T23:59:59.000Z

46

Effects of oncogenic Ras and p38 mitogen-activated protein kinase on the adhesion of normal human cells  

E-Print Network (OSTI)

Activating mutations in RAS oncogenes commonly arise in human cancers. However, in experimental settings, oncogenic RAS has most often been studied at supraphysiological levels of expression. Importantly, work by others ...

Waldman, Lynne K

2010-01-01T23:59:59.000Z

47

Unrepaired Fjord Region Polycyclic Aromatic Hydrocarbon-DNA Adducts in ras Codon 61 Mutational Hot Spots  

Science Journals Connector (OSTI)

...for carcinogen-induced proto-oncogene activation. Synthetic DNA substrates were assembled using a portion of human N-ras...for carcinogen-induced proto-oncogene activation. Synthetic DNA substrates were assembled using a portion of human N-ras...

Tonko Buterin; Martin T. Hess; Natalia Luneva; Nicholas E. Geacintov; Shantu Amin; Heiko Kroth; Albrecht Seidel; Hanspeter Naegeli

2000-04-01T23:59:59.000Z

48

SB 375 IMPLEMENTATION: FROM PLAN TO REALITY  

E-Print Network (OSTI)

Development Cross-Agency Facilitation and Coordination Funding and Support for Sustainable Communities sustainable communities in a post-SB 375 world. · Urban Greening: $41.5 million in capital projects and plans Planning - Guidance documents - Metrics and indicators - Connecting dots across state agencies - Building

California at Davis, University of

49

Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices  

SciTech Connect

The InAs/InAsSb type-II superlattice materials studied to date for infrared detector applications have been residually n-type, but p-type absorber regions with minority carrier electrons can result in increased photodiode quantum efficiency, R{sub o}A, and detectivity. Therefore, Be-doped InAs/InAsSb superlattices were investigated to determine the p-type InAs/InAsSb superlattice material transport properties essential to developing high quality photodiode absorber materials. Hall measurements performed at 10?K revealed that the superlattice converted to p-type with Be-doping of 3 × 10{sup 16} cm{sup ?3} and the hole mobility reached 24 400 cm{sup 2}/Vs. Photoresponse measurements at 10?K confirmed the 175?meV bandgap and material optical quality.

Steenbergen, E. H., E-mail: Elizabeth.Steenbergen.1@us.af.mil; Mitchel, W. C.; Mou, Shin; Brown, G. J. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433 (United States)] [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433 (United States); Elhamri, S. [Department of Physics, University of Dayton, Dayton, Ohio 45469 (United States)] [Department of Physics, University of Dayton, Dayton, Ohio 45469 (United States)

2014-01-06T23:59:59.000Z

50

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

51

2D cognitive optical data processing with phase change materials  

Science Journals Connector (OSTI)

We demonstrate high-density, multi-level crystallization of a Ge2Sb2Te5 thin film using tightly focused femtosecond laser pulses. The optical reflectivity in each distinct phase states...

Wang, qian; Maddock, Jonathan; Rogers, Edward T; Roy, Tapashree; Craig, Christopher; MacDonald, Kevin F; Hewak, Dan; Zheludev, Nikolay I

52

Thermal Evaporation and Characterization of Sb2Se3 Thin Film for Substrate Sb2Se3/CdS Solar Cells  

Science Journals Connector (OSTI)

Thermal Evaporation and Characterization of Sb2Se3 Thin Film for Substrate Sb2Se3/CdS Solar Cells ... Here we report Sb2Se3 solar cells fabricated from thermal evaporation. ... Sb2Se3; thermal evaporation; thin film; solar cells ...

Xinsheng Liu; Jie Chen; Miao Luo; Meiying Leng; Zhe Xia; Ying Zhou; Sikai Qin; Ding-Jiang Xue; Lu Lv; Han Huang; Dongmei Niu; Jiang Tang

2014-06-12T23:59:59.000Z

53

K2CsSb Cathode Development  

SciTech Connect

K{sub 2}CsSb is an attractive photocathode for high current applications. With a quantum efficiency of >4% at 532nm and >10% at 355nm, it is the only cathode to have demonstrated an average current of 35mA in an accelerator environment We describe ongoing cathode development work. for the energy recovery linac being constructed at BNL Several cathodes have been created on both copper and stainless steel substrates, and their spatial uniformity and spectral response have been characterized. Preliminary lifetime measurements have been performed at high average current densities (>1 mA/mm{sup 2}).

Smedley,J.; Rao, T.; Wang, E.

2008-10-01T23:59:59.000Z

54

Ultrafast terahertz-induced response of GeSbTe phase-change materials Michael J. Shu,1,2,a)  

E-Print Network (OSTI)

Ultrafast terahertz-induced response of GeSbTe phase-change materials Michael J. Shu,1,2,a) Peter-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub of these materials is important for predicting the field-driven heating and phase-change behavior. However

55

Alphavirus production is inhibited in neurofibromin 1-deficient cells through activated RAS signalling  

SciTech Connect

Virus-host interactions essential for alphavirus pathogenesis are poorly understood. To address this shortcoming, we coupled retrovirus insertional mutagenesis and a cell survival selection strategy to generate clonal cell lines broadly resistant to Sindbis virus (SINV) and other alphaviruses. Resistant cells had significantly impaired SINV production relative to wild-type (WT) cells, although virus binding and fusion events were similar in both sets of cells. Analysis of the retroviral integration sites identified the neurofibromin 1 (NF1) gene as disrupted in alphavirus-resistant cell lines. Subsequent analysis indicated that expression of NF1 was significantly reduced in alphavirus-resistant cells. Importantly, independent down-regulation of NF1 expression in WT HEK 293 cells decreased virus production and increased cell viability during SINV infection, relative to infected WT cells. Additionally, we observed hyperactive RAS signalling in the resistant HEK 293 cells, which was anticipated because NF1 is a negative regulator of RAS. Expression of constitutively active RAS (HRAS-G12V) in a WT HEK 293 cell line resulted in a marked delay in virus production, compared with infected cells transfected with parental plasmid or dominant-negative RAS (HRAS-S17N). This work highlights novel host cell determinants required for alphavirus pathogenesis and suggests that RAS signalling may play an important role in neuronal susceptibility to SINV infection.

Kolokoltsova, Olga A. [Department of Biochemistry and Molecular Biology, University of Texas Medical Branch, Galveston, TX (United States)], E-mail: oakoloko@utmb.edu; Domina, Aaron M. [Department of Biochemistry and Molecular Biology, University of Texas Medical Branch, Galveston, TX (United States)], E-mail: aaron.domina@enc.edu; Kolokoltsov, Andrey A. [Department of Microbiology and Immunology, University of Texas Medical Branch, Galveston, TX (United States)], E-mail: aakoloko@utmb.edu; Davey, Robert A. [Department of Microbiology and Immunology, University of Texas Medical Branch, Galveston, TX (United States)]|[Sealy Center for Structural Biology, University of Texas Medical Branch, Galveston, TX (United States)], E-mail: radavey@utmb.edu; Weaver, Scott C. [Department of Microbiology and Immunology, University of Texas Medical Branch, Galveston, TX (United States)]|[Department of Pathology, University of Texas Medical Branch, Galveston, TX (United States)]|[Sealy Center for Vaccine Development, University of Texas Medical Branch, Galveston, TX (United States)], E-mail: sweaver@utmb.edu; Watowich, Stanley J. [Department of Biochemistry and Molecular Biology, University of Texas Medical Branch, Galveston, TX (United States)]|[Sealy Center for Structural Biology, University of Texas Medical Branch, Galveston, TX (United States)]|[Sealy Center for Vaccine Development, University of Texas Medical Branch, Galveston, TX (United States)], E-mail: watowich@xray.utmb.edu

2008-07-20T23:59:59.000Z

56

Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics  

SciTech Connect

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

2002-10-01T23:59:59.000Z

57

The reaction mechanism of SnSb and Sb thin film anodes for Na-ion batteries studied by X-ray diffraction, 119Sn and 121Sb M ssbauer spectroscopies  

SciTech Connect

The electrochemical reaction of Sb and SnSb anode materials with Na results in the formation of amorphous materials. To understand the resulting phases and electrochemical capacities we studied the reaction products local order using 119Sn and 121Sb M ssbauer spectroscopies in conjunction with measurements performed on model powder compounds of Na-Sn and Na-Sb to further clarify the reactions steps. For pure Sb the discharge (sodiation) starts with the formation of an amorphous phase composed of atomic environments similar to those found in NaSb, and proceeds further by the formation of environments similar to that present in Na3Sb. The reversible reaction takes place during a large portion of the charge process. At full charge the anode material still contains a substantial fraction of Na, which explains the lack of recrystallization into crystalline Sb. The reaction of SnSb yields Na3Sb crystalline phase at full discharge at higher temperatures (65 and 95 C) while the room temperature reaction yields amorphous compounds. The electrochemically-driven, solid-state amorphization reaction occurring at room temperature is governed by the simultaneous formation of Na-coordinated Sn and Sb environments, as monitored by the decrease (increase) of the 119Sn (121Sb) M ssbauer isomer shifts. Overall, the monitoring of the hyperfine parameters enables to correlate the changes in Na content to the individual Sn and Sb local chemical environments.

Baggetto, Loic [ORNL; Hah, Hien-Yoong [University of Tennessee (UT) Space Institute; Jumas, Dr. Jean-Claude [Institut Charles Gerhardt, University of Montpellier II, FRANCE; Johnson, Prof. Dr. Charles E. [University of Tennessee (UT) Space Institute; Johnson, Jackie A. [University of Tennessee (UT) Space Institute; Keum, Jong Kahk [ORNL; Bridges, Craig A [ORNL; Veith, Gabriel M [ORNL

2014-01-01T23:59:59.000Z

58

Characterization of improved InSb interfaces  

Science Journals Connector (OSTI)

Improved quality surfaces on n?type InSb have been produced using a low?temperature chemical vapor deposition (LTCVD) of SiO2 by pyrolytic decomposition of silane in the presence of oxygen. Preservation of the thin natural oxide on the InSbsurface through a suitable LTCVD process results in a surface state density ?1010 eV?1?cm?2 and without C–V hysteresis. Confirmation of these results is made by both quasistatic C–V and conductance measurements on MIS structures. Complications introduced by the presence of lateral nonuniformity of the LTCVD oxide and thus in the surface potential have been accounted for in the observed low density measurements. The presence chemical identification and thickness of the natural oxide both before and after the LTCVD process has been idependently confirmed by XPS. The apparent oxidation state and resultant electrical properties are identified with changes in LTCVD reactor conditions.

J. D. Langan; C. R. Viswanathan

1979-01-01T23:59:59.000Z

59

Planning for sustainable communities: Regional incentives and local policy under SB375  

E-Print Network (OSTI)

#12;SB 375: Sustainable Communities & Climate Protection Act (2008) isolation dispersion automobility

California at Davis, University of

60

Investigation of potato starch and sonicated RAS as alternative carbon sources for biological nitrogen removal  

Science Journals Connector (OSTI)

High nitrogen discharge from wastewater impacts negatively on the marine environment. Under the South Australian Environmental Improvement Program, metropolitan wastewater treatment plants are reconfigured to meet the new nitrogen discharge guideline. The denitrification process is carbon limited with carbon supplementation required to meet discharge guidelines, hence molasses is used for carbon source. Although molasses is inexpensive, other carbon sources particularly industrial waste potato starch and sonicated Return Activated Sludge (RAS) are explored. Research to evaluate soluble carbon release is quantified and preliminary results are presented suggesting that sonicated RAS may be an attractive substitute for molasses.

Gideon Kuncoro; Yung Ngothai; Uwe Kaeding; David Sweeney; Brian O'Neill

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

High frequency of K-ras codon 12 mutations in bronchoalveolar lavage fluid of patients at high risk for second primary lung cancer.  

Science Journals Connector (OSTI)

...lung cancer. | A high frequency of K-ras mutations...Cancer Research 479 High Frequency of K-ras Codon 12...ABSTRACT A high frequency of K-ras mutations...9610 Medical Center Drive, Rockville, MD 20850...specimens. Only a small, variable percent-age of bronchial...

F M Scott; R Modali; T A Lehman; M Seddon; K Kelly; E C Dempsey; V Wilson; M S Tockman; and J L Mulshine

1997-03-01T23:59:59.000Z

62

Electronic and Transport Properties of Zintl Phase Ae2MgPn2, Ae=Ca,Sr,Ba, P n=As,Sb,Bi in relation to Mg3Sb2  

SciTech Connect

First principles calculations of the electronic structure and transport properties of Zintl phase Ae2MgP n2, Ae=Ca,Sr,Ba, P n=As,Sb,Bi compounds and Mg3Sb2 are reported. These are discussed in relation to the thermoelectric performance of the compounds and specifically the optimization of carrier concentration. It is found that there are several promising compositions and that the materials that have been studied to date are not fully optimized in terms of doping and may not ultimately be the best thermoelectrics in this family. We additionally report optical properties and show that there are significant differences among the compounds arising from differences in electronic structure and that these differences should be accessible to experiment. This provides a way to test the trends observed here.

Singh, David J [ORNL] [ORNL; Parker, David S [ORNL] [ORNL

2013-01-01T23:59:59.000Z

63

SB Electronics Breaks Ground on New Factory | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

SB Electronics Breaks Ground on New Factory SB Electronics Breaks Ground on New Factory SB Electronics Breaks Ground on New Factory April 29, 2010 - 5:22pm Addthis U.S. Rep. Peter Welch (from left), Vermont Lt. Gov. Brian Dubie, SBE board member Win Hunter, SBE board chair Stan Fishkin, Assi U.S. Rep. Peter Welch (from left), Vermont Lt. Gov. Brian Dubie, SBE board member Win Hunter, SBE board chair Stan Fishkin, Assi Paul Lester Communications Specialist, Office of Energy Efficiency and Renewable Energy A Vermont company broke ground on a new factory that will produce cutting-edge technology for electric and hybrid cars and create more than 100 jobs. The event ushering in SB Electronics' power ring capacitor facility in Barre was attended by Vermont Gov. Jim Douglas and federal, state and local

64

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

65

SeZnSb alloy and its nano tubes, graphene composites properties  

SciTech Connect

Composite can alter the individual element physical property, could be useful to define the specific use of the material. Therefore, work demonstrates the synthesis of a new composition Se{sub 96}-Zn{sub 2}-Sb{sub 2} and its composites with 0.05% multi-walled carbon nano tubes and 0.05% bilayer graphene, in the glassy form. The diffused amorphous structure of the multi walled carbon nano tubes and bilayer gaphene in the Se{sub 96}-Zn{sub 2}-Sb{sub 2} alloy have been analyzed by using the Raman, X-ray photoluminescence spectroscopy, Furrier transmission infrared spectra, photoluminescence, UV/visible absorption spectroscopic measurements. The diffused prime Raman bands (G and D) have been appeared for the multi walled carbon nano tubes and graphene composites, while the X-ray photoluminescence core energy levels peak shifts have been observed for the composite materials. Subsequently the photoluminescence property at room temperature and a drastic enhancement (upto 80%) in infrared transmission percentage has been obtained for the bilayer graphene composite, along with optical energy band gaps for these materials have been evaluated 1.37, 1.39 and 1.41 eV.

Singh, Abhay Kumar [Department of Physics, Indian Institute of Physics, Bangalore-560012 (India)

2013-04-15T23:59:59.000Z

66

The applicability of the Ras Tanajib pile capacity method to long offshore piles  

SciTech Connect

The applicability of the Ras Tanajib pile capacity method to piles driven to penetrations greater than 30 m in the very dense sands of the Safaniya Field of the Arabian Gulf is investigated. Comparisons of observed and predicted blow counts, and measured and computed soil resistances to driving are presented. Blow counts are predicted using procedures recommended by Stevens, Wiltsie, and Turton (1982). The measured soil resistance to driving is the Case-Goble bearing capacity computed using a damping coefficient of 0.20. The computed soil resistance to driving is the lower and upper bound values computed for a plugged pile. CAPWAP analyses are performed at final penetration to confirm pile capacities computed using the Ras Tanajib method.

Stevens, R.F.; Al-Shafei, K.A.

1996-12-31T23:59:59.000Z

67

Effect of Sb incorporation on structure and magnetic properties of quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) thin films  

SciTech Connect

GaAs-based quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) has been successfully prepared by molecular-beam epitaxy. High-resolution x-ray diffraction measurements indicate that the lattice constant has a notable alteration with changing Sb content. Magnetic measurements demonstrate the same evolution of the Curie temperature T{sub C} and the effective Mn content x{sub eff} with increasing Sb content. The incorporation of low Sb content is of benefit to increasing x{sub eff}, thus, increasing T{sub C}. However, higher Sb content degrades the crystal quality, resulting in a decrease of x{sub eff}. Experimental results show that T{sub C} is proportional to the product of x{sub eff} and p{sup 1/3}, which is consistent with the Zener Model. The exchange energy N{sub 0}? is calculated to be ?1.09 eV, which is similar to that of (Ga, Mn)As.

Deng, J. J.; Che, J. T.; Chen, J.; Wang, W. J.; Hu, B. [Mathematics and Physics Department, North China Electric Power University, Beijing 102206 (China)] [Mathematics and Physics Department, North China Electric Power University, Beijing 102206 (China); Wang, H. L.; Zhao, J. H. [Institute of Semiconductors, State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)] [Institute of Semiconductors, State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2013-12-28T23:59:59.000Z

68

Investigation of the Fe1+xSb system  

Science Journals Connector (OSTI)

X-ray diffraction, bulk magnetization, and Fe57 Mössbauer spectroscopic measurements on Fe1+xSb system for various values of x (0.14?x?0.35) are reported. The x-ray data suggest that the ASTM (American Society for Testing and Materials) data file for Fe1+xSb should be modified. The lattice Néel temperatures obtained from magnetic susceptibility and Mössbauer spectroscopic measurements are in nice agreement with each other and decrease linearly with increase in x. The Néel temperatures for the ordering of interstitial Fe atoms are higher than 60 K and increase with x. The low-temperature Mössbauer spectra have been analyzed in terms of a Lorentzian distribution of the magnetic hyperfine field at lattice sites, a low-field site, and a relatively high-field interstitial site. Also included are comments on the low magnetic moment of Fe in Fe1+xSb.

R. Kumar; K. S. Harchand; Vishwamittar; K. Chandra; P. Jernberg; T. Ericsson; R. Wappling

1985-07-01T23:59:59.000Z

69

Characterization of the properties for phase-change material GeSb  

Science Journals Connector (OSTI)

Te-free environmentally friendly GeSb phase-change material has been investigated. Eutectic Ge15Sb85...composition, which has a proper high crystallization temperature of 230°C, is a good candidate for the applic...

Yifeng Gu; Ting Zhang; Zhitang Song; Yanbo Liu; Bo Liu; Songlin Feng

2010-04-01T23:59:59.000Z

70

Anisotropy of the fundamental absorption edge of TlSbS2  

Science Journals Connector (OSTI)

We have investigated, at pumped-liquid-helium temperature, the near-band-edge optical properties of the ternary layer compound TlSbS2. We resolve first a direct-band-gap exciton. A quantitative analysis of the data allows an accurate determination of the direct-band-gap energy E0=1.907 eV at 2 K. An anisotropic behavior is found, which depends on the direction of polarization of the incident light with respect to the triclinic axes which lie in the plane of the layer. Depending on the polarization, both E0 and the next threshold E1 have strongly different oscillator strengths. These results are discussed in the light of previous results for the monochalcogenide SnS.

P. Rouquette; J. Allegre; B. Gil; J. Camassel; H. Mathieu; A. Ibanez; J. C. Jumas

1986-03-15T23:59:59.000Z

71

Born-Oppenheimer breakdown effects and hyperfine structure in the rotational spectra of SbF and SbCl  

Science Journals Connector (OSTI)

Pure rotational spectra have been measured for the ground electronic states of SbF and SbCl. The molecules were prepared by laser ablation of Sb metal in the presence of SF6 or Cl2, respectively. Their spectra were measured with a cavity pulsed jet Fourier transform microwave spectrometer. Although both molecules have two unpaired electrons, they are subject to Hund’s coupling case (c), and have X10+ ground states. The spectra have been interpreted with the formalism of 1?+ molecules. For both molecules spectra of several isotopomers have been measured in the ground and first excited vibrational states. Large hyperfine splittings attributable to both nuclear quadrupole coupling and nuclear spin-rotation coupling have been observed. A Dunham-type analysis has produced unusually large Born-Oppenheimer breakdown parameters, which are interpreted in terms of the electronic structures of the molecules.

Stephen A. Cooke; Michael C.L. Gerry

2005-01-01T23:59:59.000Z

72

Crystal structure and bonding characteristics of In-doped {beta}-Zn{sub 4}Sb{sub 3}  

SciTech Connect

The effects of indium impurity on the crystal structure and bonding characteristics of In-doped {beta}-Zn{sub 4}Sb{sub 3} were investigated by powder X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The XRD Rietveld refinement indicates that the indium impurity preferentially substitutes one of Sb atoms in Sb-Sb dimer at the 12c Sb(2) site and simultaneously leads to the increase of Zn occupancy. The observations of binding energy shift and a new valence state in Sb 3d core-level XPS spectra can be attributed to the charge transfer from In and Zn to Sb. As a result, more electropositive Zn atoms are needed to maintain the charge balance. The reduction of the lattice thermal conductivity is ascribed to the formation of the asymmetric Sb-In bond, resulting in much low lattice thermal conductivity of 0.49 W{sup -1} K{sup -1} of Zn{sub 4}Sb{sub 2.96}In{sub 0.04}. - Graphical abstract: The indium impurity substitutes one of Sb atoms in Sb-Sb dimer, resulting the charge transfer from In to Sb, which leads to the binding energy of Sb 3d core level XPS spectra shift to low value. Highlights: Black-Right-Pointing-Pointer The indium impurity preferentially substitutes one of Sb atoms in Sb-Sb dimer at the 12c Sb(2) site. Black-Right-Pointing-Pointer The occupancy of Zn increases by the In substitution for Sb, whereas that of Sb keeps constant. Black-Right-Pointing-Pointer The binding energy of Sb 3d shifts to low value. Black-Right-Pointing-Pointer The charge transfer occurs from In and Zn to Sb.

Tang, Dingguo [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China) [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Key Laboratory of Catalysis and Materials Science of the State Ethnic Affair Commission and Ministry of Education, South-Central University for Nationalities, Wuhan 430074 (China); Zhao, Wenyu, E-mail: wyzhao@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Cheng, Sudan; Wei, Ping; Yu, Jian [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Zhang, Qingjie, E-mail: zhangqj@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)

2012-09-15T23:59:59.000Z

73

Electronic-Structure of the Semimetals Bi and Sb  

E-Print Network (OSTI)

We have developed a third-neighbor tight-binding model, with spin-orbit coupling included, to treat the electronic properties of Bi and Sb. This model successfully reproduces the features near the Fermi surface that will be most important...

LIU, Y.; Allen, Roland E.

1995-01-01T23:59:59.000Z

74

Interdiffusion in NiMnSb/V/NiMnSb: X-ray and neutron reflectivity investigation of ion beam sputtered trilayer systems  

SciTech Connect

The new trilayer system NiMnSb/V/NiMnSb on MgO(001) was investigated by means of vibrating sample magnetometry (VSM), x-ray, and neutron reflectivity. VSM revealed a coercive field H{sub c}=23 Oe and a hysteresis loop similar to that of an uncoupled ferromagnet. The x-ray and neutron reflectivity data proved that interface roughnesses of 10 {Angstrom} are present. A detailed analysis yielded significant interdiffusion at the NiMnSb/V interfaces which is one possible explanation for the weak magnetoresistance effect measured in similar NiMnSb-based multilayer systems. {copyright} {ital 1999 American Institute of Physics.}

Schlomka, J.; Tolan, M.; Press, W. [Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, 24098 Leibnizstrasse 17-19, Kiel (Germany)] [Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, 24098 Leibnizstrasse 17-19, Kiel (Germany); Fitzsimmons, M.R. [Manuel Lujan, Jr. Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Manuel Lujan, Jr. Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Siebrecht, R. [Institut Laue-Langevin, 38042 Grenoble, Cedex 9 (France)] [Institut Laue-Langevin, 38042 Grenoble, Cedex 9 (France); Schubert, D.W. [GKSS Forschungszentrum, 21502 Geesthacht (Germany)] [GKSS Forschungszentrum, 21502 Geesthacht (Germany); Simon, P. [Max Planck Institut fuer Polymerforschung, 55021 Mainz (Germany)] [Max Planck Institut fuer Polymerforschung, 55021 Mainz (Germany)

1999-11-01T23:59:59.000Z

75

Influence of substituting Sn for Sb on the thermoelectric transport properties of CoSb{sub 3}-based skutterudites  

SciTech Connect

Band structure calculations that incorporate impurity effects suggest that a band resonant state may be formed in p-type CoSb{sub 3}-based skutterudites by replacing Sb atoms with Sn dopant atoms. Such resonant states have the potential to greatly improve thermoelectric energy conversion efficiency by increasing the density of states variation near the Fermi level, thereby increasing the Seebeck coefficient at a given carrier concentration. Through transport measurements of the Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient, we show that a practical band resonant state is not achieved by Sn doping. Compared to undoped CoSb{sub 3}, the dimensionless figure of merit (ZT) in Sn-doped CoSb{sub 3} is enhanced slightly at high temperatures to a value of 0.2, mostly due to a reduction in thermal conductivity. The Fermi level is calculated not to reach the band resonant state induced by Sn impurity atoms within the range of Sn concentrations examined here.

Hui, Si [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Nielsen, Michele D. [Department of Mechanical and Aerospace Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Homer, Mark R.; Medlin, Douglas L. [Sandia National Laboratories, Livermore, California 94550 (United States); Tobola, Janusz [AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, 30-059 Krakow (Poland); Salvador, James R. [Chemical and Materials Systems Laboratory, GM R and D Center, Warren, Michigan 48090 (United States); Heremans, Joseph P. [Department of Mechanical and Aerospace Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Department of Physics, Ohio State University, Columbus, Ohio 43210 (United States); Pipe, Kevin P. [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-03-14T23:59:59.000Z

76

Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller  

E-Print Network (OSTI)

Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller Lawrence Berkeley observed local vibrational modes LVM's arising from DX-hydrogen complex in AlSb. Hydrogen was diffused into bulk AlSb:Se and AlSb:Te by annealing in sealed quartz ampoules with either hydrogen gas or methanol CH

McCluskey, Matthew

77

Investigation of wind characteristics and wind energy potential at Ras Ghareb, Egypt  

Science Journals Connector (OSTI)

To study the structure of a coastal location «Ras Ghareb» on the Red Sea in Egypt, a measurement station with mast of 24.5 m has been established in a built-up area, near the seashore. First, a statistical analysis of the measured data over the period 2000–2005 was performed, including calculation of the wind speed power law index which was found to be 0.18 for Ras Ghareb area. Then, wind speed data was expressed at the height of (usually 10 m) which makes it directly related to the objective of those people working in the renewable energy sector. Therefore, the mean wind speeds, availability of data, seasonal variation and the distribution by the wind direction were studied to ascertain its potential for wind energy development. The annual wind speed over this site varies from 8.3 to 9.8 m/s at 10 and 24.5 m heights, respectively. Most of the time 73% the mean wind speed in the ranges 5–10 and 10–17 m/s at 10 m. Also, higher winds of the order 10 m/s and more observed during summer months. The main wind direction is north–northwest sector (330°) for about 51% of the times during the year that makes it unique for installation of wind parks. Second, numerical estimations to determine the seasonal power law coefficient and Weibull parameters at different heights from 10 to 100 m were carried out. Finally, Rayleigh distribution and our method stated in Ref. [3] were adopted for defining the monthly wind power available at 10 m height for this region. It is emphasized that Rayleigh model is not appropriate and our method is more efficient for Ras Ghareb area. Where the expected mean of wind power density was found to quite high 360 W/m2 per year at 10 m hub height, which makes this station likely candidates for wind power utilization. It is appear from our analysis that Ras Ghareb region can be explored for generating the electricity. Where the monthly and annual pattern of wind speed matches the electricity load pattern of the location.

Ahmed Shata Ahmed

2011-01-01T23:59:59.000Z

78

Eight-band k·p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared  

SciTech Connect

Band structure properties of the type-II W-design AlSb/InAs/GaIn(As)Sb/InAs/AlSb quantum wells have been investigated theoretically in a systematic manner and with respect to their use in the active region of interband cascade laser for a broad range of emission in mid infrared between below 3 to beyond 10??m. Eight-band k·p approach has been utilized to calculate the electronic subbands. The fundamental optical transition energy and the corresponding oscillator strength have been determined in function of the thickness of InAs and GaIn(As)Sb layers and the composition of the latter. There have been considered active structures on two types of relevant substrates, GaSb and InAs, introducing slightly modified strain conditions. Additionally, the effect of external electric field has been taken into account to simulate the conditions occurring in the operational devices. The results show that introducing arsenic as fourth element into the valence band well of the type-II W-design system, and then altering its composition, can efficiently enhance the transition oscillator strength and allow additionally increasing the emission wavelength, which makes this solution prospective for improved performance and long wavelength interband cascade lasers.

Ryczko, K.; S?k, G.; Misiewicz, J. [Institute of Physics, Wroc?aw University of Technology, Wybrze?e Wyspia?skiego 27, 50-370 Wroc?aw (Poland)

2013-12-14T23:59:59.000Z

79

Confirmation of intrinsic electron gap states at nonpolar GaN(1-100) surfaces combining photoelectron and surface optical spectroscopy  

SciTech Connect

The electronic structure of GaN(1–100) surfaces is investigated in-situ by photoelectron spectroscopy (PES) and reflection anisotropy spectroscopy (RAS). Occupied surface states 3.1?eV below the Fermi energy are observed by PES, accompanied by surface optical transitions found in RAS around 3.3?eV, i.e., below the bulk band gap. These results indicate that the GaN(1–100) surface band gap is smaller than the bulk one due to the existence of intra-gap states, in agreement with density functional theory calculations. Furthermore, the experiments demonstrate that RAS can be applied for optical surface studies of anisotropic crystals.

Himmerlich, M., E-mail: marcel.himmerlich@tu-ilmenau.de; Eisenhardt, A.; Shokhovets, S.; Krischok, S. [Institut für Physik and Institut für Mikro- und Nanotechnologien, TU Ilmenau, PF 100565, 98684 Ilmenau (Germany); Räthel, J.; Speiser, E.; Neumann, M. D.; Navarro-Quezada, A.; Esser, N. [Leibniz-Institut für Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Strasse 9, 12489 Berlin (Germany)

2014-04-28T23:59:59.000Z

80

Mouse cells contain two distinct ras gene mRNA species that can be translated into a p21 onc protein.  

Science Journals Connector (OSTI)

...precursor-product relationship. In summary, 416B cells contain 6B cells contain - two Ki-ras-related RNA species which are inde- usec monocionai antitDoaies against pzi ras to study protein expression in transformed and normal cells (11). By using antibodies...

R W Ellis; D DeFeo; M E Furth; E M Scolnick

1982-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

In situ selectivity profiling and crystal structure of SML-8-73-1, an active site inhibitor of oncogenic K-Ras G12C  

Science Journals Connector (OSTI)

...between strongly electrophilic warheads and nontarget proteins...chromatography-electrospray ionization-MS of intact K-Ras G12C were also performed...Ionization-MS Analysis of Intact K-Ras G12C. Labeling and...to be greater than 95% by intact MS analysis. Mass spectra...

John C. Hunter; Deepak Gurbani; Scott B. Ficarro; Martin A. Carrasco; Sang Min Lim; Hwan Geun Choi; Ting Xie; Jarrod A. Marto; Zhe Chen; Nathanael S. Gray; Kenneth D. Westover

2014-01-01T23:59:59.000Z

82

Above room-temperature operation of InAs/AlGaSb superlattice quantum cascade lasers emitting at 12 {mu}m  

SciTech Connect

The authors report on above-room-temperature operation of InAs/AlGaSb quantum cascade lasers emitting at 12 {mu}m. The laser structures are grown on a n-InAs (100) substrate using solid-source molecular beam epitaxy. An InAs/AlGaSb superlattice is used as an active part and an InAs double plasmon waveguide is used for optical confinement. Results show that increased doping concentration in the injection part of the active region expands the current operation range of the devices, allowing laser operation at and above room temperature. The observed threshold current density is 4.0 kA/cm{sup 2} at 300 K; the maximum operation temperature is 340 K.

Ohtani, K.; Moriyasu, Y.; Ohnishi, H.; Ohno, H. [Laboratory for Nanoelectronics and Semiconductor Spintronics, Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)

2007-06-25T23:59:59.000Z

83

Lattice Vibrations in La(Ce)Fe4Sb12 and CoSb3: Inelastic Neutron Scattering and Theory  

SciTech Connect

We present results of time-of-flight inelastic neutron scattering phonon density of states measurements on (La,Ce){sub 0.9}Fe{sub 4}Sb{sub 12} and CoSb{sub 3} as well as of a detailed comparison with lattice dynamical models in the literature. The MARI experimental setup is replicated by a theory for scattering from a polycrystalline material. The model considered for the filled materials is a local density approximation (LDA) based short-range force constant model and those considered for CoSb{sub 3} are the LDA-based model with the La-related parameters removed and a semiempirical model. We show that the presence of La significantly affects the shape of the spectrum. We also conclude that upon filling the Sb intrasquare force constants are weakened and that the transition-metal Sb bonds are almost unchanged.

Feldman, J. L. [Naval Research Laboratory, Washington, D.C.; Dai, Pengcheng [ORNL; Enck, Thomas P [ORNL; Sales, Brian C [ORNL; Mandrus, David [ORNL; Singh, David J [ORNL

2006-01-01T23:59:59.000Z

84

From plan to practice: implementing SB 617, California's regulatory review reform.  

E-Print Network (OSTI)

??SB 617 (Calderon & Pavley, 2011) is an ambitious experiment to improve state regulations and increase government transparency. The statute reforms California’s regulatory review process… (more)

Marin, Angela K.

2013-01-01T23:59:59.000Z

85

Activator Protein 1 Transcription Factors Are Fundamental to v-rasHa-induced Changes in Gene Expression in Neoplastic Keratinocytes  

Science Journals Connector (OSTI)

...activation by RAS but does not transform mammalian...on kinase activity and does not convert C-RAF into...the N-region. This fundamental difference in RAF isoform...on kinase activity and does not convert C-RAF into...the N-region. This fundamental difference in RAF isoform...

Susan E. Rutberg; Tracey L. Adams; Adam Glick; Maria T. Bonovich; Charles Vinson; and Stuart H. Yuspa

2000-11-15T23:59:59.000Z

86

Direct imaging of InSb (110)-(1x1) surface grown by molecular beam epitaxy  

SciTech Connect

High-resolution transmission electron microscopy under a profile imaging condition (HR-profile TEM) was employed to determine the structural model for the InSb(110)-(1x1) relaxation surface grown by molecular beam epitaxy (MBE). HR-profile TEM analyses indicate that the chevron model, which is widely accepted for zinc-blende-type III-V(110)-(1x1) surfaces prepared by cleavage, is also applicable to the InSb(110)-(1x1) surface prepared under an Sb-rich MBE condition. The assignment of atomic species (In or Sb) of InSb(110)-(1x1) surfaces was confirmed based on a HR-profile TEM image that captures the connected facets of InSb(110)-(1x1) and InSb(111)B-(2x2). On the basis of the well-known atomic species of InSb(111)B-(2x2), the atomic species of the InSb(110)-(1x1) surface were deduced straightforwardly: the atoms shifted upward and downward at the topmost layer of the InSb(110)-(1x1) surface are Sb and In, respectively. The atomic arrangements of the InSb(110)-(1x1)-InSb(111)B-(2x2) facet determined by HR-profile TEM may represent the atomic arrangements of zinc-blende-type III-V(331)B surfaces.

Mishima, T. D. [Homer L. Dodge Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman, Oklahoma 73019 (United States)

2011-10-01T23:59:59.000Z

87

Siberian Branch of Russian Academy of Science Budker Institute of Nuclear Physics  

E-Print Network (OSTI)

Institute of Nuclear Physics, SB RAS, Novosibirsk, Russia The ion-optical channel of vacuum insulation-optical channel of 2.5 MeV 10 mA tandem accelerator are proposed. © Budker Institute of Nuclear Physics #12] the BINP staff is developing the electrostatic tandem accelerator with vacuum insulation of the protons

Taskaev, Sergey Yur'evich

88

Analysis of Senate Bill 365: Analysis of the Potential Impacts of SB 365: Out-of-State Carriers  

E-Print Network (OSTI)

be 8,374. Public Health Implications • Enrollees of out-of-the potential health implications of SB 365. • Severalto consider the health implications of SB 365 with regard to

California Health Benefits Review Program (CHBRP)

2007-01-01T23:59:59.000Z

89

AlSb Formation in UHV by Laser Annealing of Evaporated A1 and Sb Films. Characterization by AES and XPS  

Science Journals Connector (OSTI)

Results reported here involve the interaction of a pulsed and doubled Nd:YAG laser beam with multilayer A1 and Sb metallic samples (in stoichiometric proportion) which has been studied under ultra-high-vacuum (UHV

E. Petit; P. Warnant; P. A. Thiry; R. Caudano

1986-01-01T23:59:59.000Z

90

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te  

E-Print Network (OSTI)

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te alloys: Density functional functional simulations, Ge/Sb/Te alloys. Corresponding author: e-mail r.jones@fz-juelich.de, Phone: +49 discussed the alloy As30Ge10Si12Te48, and Te-based alloys have been well represented ever since. Alloys

91

Unravelling the atomic structure of AgInSbTe phase change materials: Theoretical perspective  

E-Print Network (OSTI)

E*PCOS2011 Unravelling the atomic structure of AgInSbTe phase change materials: Theoretical-GST. Key words: phase change materials, Ag/In/Sb/Te alloys, density functional, molecular dynamics 1. INTRODUCTION Phase change (PC) materials are chalcogenide alloys that switch very rapidly between the amorphous

92

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response  

E-Print Network (OSTI)

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 27 infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

Jalali. Bahram

93

Ultralow noise midwave infrared InAsGaSb strain layer superlattice avalanche photodiode  

E-Print Network (OSTI)

Ultralow noise midwave infrared InAs­GaSb strain layer superlattice avalanche photodiode InAs­GaSb strain layer superlattice p+ -n- -n homojunction avalanche photodiodes APDs grown by solid characteristics. © 2007 American Institute of Physics. DOI: 10.1063/1.2817608 Photodiodes operating in the eye

Krishna, Sanjay

94

Describing Leaf Area Distribution in Loblolly Pine Trees with Johnson's SB Function  

E-Print Network (OSTI)

of leaf area of a wide variety of loblolly pine trees. FOR. SCI. 51(2):93­101. Key Words: ProbabilityDescribing Leaf Area Distribution in Loblolly Pine Trees with Johnson's SB Function Mauricio Jerez fractions of leaf area calculated with fitted SB functions matched measured values well; cumulative values

Cao, Quang V.

95

Interface Reactions and Electrical Characteristics of Au/GaSb Contacts  

SciTech Connect

The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{sub 2} compound and several Au-Ga phases are produced. Phase transitions occur toward higher Ga concentration with increasing annealing temperatures. Furthermore, the depth of the contact also increases with increased annealing temperature. They found that the AuSb{sub 2} compound forms on the GaSb surface, with the compound crystal partially ordered with respect to the substrate. The transition of Schottky- to ohmic-contact behavior in Au/n-type GaSb occurs simultaneously with the formation of the AuGa compound at about a 250 C annealing temperature. This ohmic contact forms without the segregation of dopants at the metallic compound/GaSb interface. Therefore it is postulated that transition from Schottky- to ohmic-contact behavior is obtained through a series of tunneling transitions of electrons through defects in the depletion region in the Au/n-type GaSb contacts. Contact resistivities of 6-7 x 10{sup -6} {Omega}-cm{sup 2} were obtained with the annealing temperature between 300 and 350 C for 30 seconds. In Au/p-type GaSb contacts, the resistivity was independent of the annealing temperature. This suggested that the carrier transport in p-type contact dominated by thermionic emission.

H. Ehsani; R.J. Gutmann; G.W. Charache

2000-07-07T23:59:59.000Z

96

Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications  

DOE Patents (OSTI)

Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

2014-11-11T23:59:59.000Z

97

IEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array  

E-Print Network (OSTI)

2.3-m laser. Al Ga As Sb cladding layers. Details of the lasers' heterostructure design can be foundIEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array L. Shterengas, G--High-power 2.3- m In(Al)GaAsSb­GaSb type-I double quantum-well diode laser arrays were fabricated

98

Illinois SB 1987: the Clean Coal Portfolio Standard Law  

SciTech Connect

On January 12, 2009, Governor Rod Blagojevich signed SB 1987, the Clean Coal Portfolio Standard Law. The legislation establishes emission standards for new coal-fueled power plants power plants that use coal as their primary feedstock. From 2009-2015, new coal-fueled power plants must capture and store 50 percent of the carbon emissions that the facility would otherwise emit; from 2016-2017, 70 percent must be captured and stored; and after 2017, 90 percent must be captured and stored. SB 1987 also establishes a goal of having 25 percent of electricity used in the state to come from cost-effective coal-fueled power plants that capture and store carbon emissions by 2025. Illinois is the first state to establish a goal for producing electricity from coal-fueled power plants with carbon capture and storage (CCS). To support the commercial development of CCS technology, the legislation guarantees purchase agreements for the first Illinois coal facility with CCS technology, the Taylorville Energy Center (TEC); Illinois utilities are required to purchase at least 5 percent of their electricity supply from the TEC, provided that customer rates experience only modest increases. The TEC is expected to be completed in 2014 with the ability to capture and store at least 50 percent of its carbon emissions.

NONE

2009-01-15T23:59:59.000Z

99

Event:Sustainable Biomass for Electricity Conference (SB4E) | Open Energy  

Open Energy Info (EERE)

Biomass for Electricity Conference (SB4E) Biomass for Electricity Conference (SB4E) Jump to: navigation, search Calendar.png Sustainable Biomass for Electricity Conference (SB4E): on 2012/05/02 The Conference on Sustainable Biomass for Electricity (SB4E), organized by UN-Energy in cooperation with the Global Bioenergy Partnership (GBEP) and other partners, will consider the role of biomass technologies in decarbonizing the global energy system. Acknowledging the readily available and cost effective potential for emission reductions that could be achieved through the large-scale deployment of sustainable biomass for electricity production, the SB4E Conference will provide an opportunity for governments, international organizations and the private sector to share knowledge, lessons, best practices and experiences and to join efforts

100

Nepheline Formation Potential in Sludge Batch 4 (SB4)  

SciTech Connect

The effect of crystallization on glass durability is complex and depends on several interrelated factors including the change in residual glass composition, the formation of internal stress or microcracks, and the preferential attack at the glass-crystal interface. Perhaps one of the most significant effects is the type and extent (or fraction) of crystallization and the resulting change to the residual glass composition. A strong increase in glass dissolution (or decrease in durability) has been observed in previous studies in glasses that formed aluminum-containing crystals, such as NaAlSiO{sub 4} (nepheline) and LiAlSi{sub 2}O{sub 6}, and crystalline SiO{sub 2}. Although the addition of Al{sub 2}O{sub 3} to borosilicate glasses enhances the durability of the waste form (through creation of network-forming tetrahedral Na{sup +}-[AlO{sub 4/2}]{sup -} pairs), the combination of high Al{sub 2}O{sub 3} and Na{sub 2}O can lead to the formation of nepheline (NaAlSiO{sub 4}). Given the projected high concentration of Al{sub 2}O{sub 3} in SB4 and the potential use of a high Na{sub 2}O based glass (as a result of the use of a high Na{sub 2}O frit and/or a less washed sludge) to improve melt rate, the potential formation of nepheline in various SB4 systems is being assessed. Li et al. (2003) indicate that sodium alumino-borosilicate glasses are prone to nepheline crystallization if their compositions projected on the Na{sub 2}O-Al{sub 2}O{sub 3}-SiO{sub 2} ternary fall within the nepheline primary phase field. In particular, durable glasses with SiO{sub 2}/(SiO{sub 2}+Na{sub 2}O+ Al{sub 2}O{sub 3}) > 0.62, where the oxides are expressed as mass fractions in the glass, do not precipitate nepheline as their primary phase. Twelve SB4-based glasses have been identified or classified as ''prone to nepheline formation'' using a ''less conservative'' discriminator value of 0.65. Ten of the 12 glasses are Frit 320 based, and 8 of these 10 target a 40% WL-independent of the SB4 blending scenario used. This is not unexpected due to the higher alkali content of Frit 320 (12% Na{sub 2}O) relative to Frit 418 (8% Na{sub 2}O) and the fact that as WLs increase, the Na{sub 2}O and Al{sub 2}O{sub 3} concentrations increase and the SiO{sub 2} concentrations decrease in this series of glasses. Using the ''less conservative'' value as a guide will not only increase the probability of forming nepheline but will also allow the assessment of several different blending scenarios, both frits, and different WLs which will provide valuable insight into the frit selection process for SB4. More specifically, blending strategies, frit compositions, and WLs that avoid nepheline formation could be used to guide the frit selection process or to make compositional adjustments to the frit. The durability of these 12 glasses (of both quenched and centerline canister cooled versions) will be measured with the results being documented in a subsequent report.

PEELER, D

2005-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
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101

Senescence-Associated Secretory Phenotypes Reveal Cell-Nonautonomous Functions of Oncogenic RAS and the p53 Tumor Suppressor  

SciTech Connect

Cellular senescence suppresses cancer by arresting cell proliferation, essentially permanently, in response to oncogenic stimuli, including genotoxic stress. We modified the use of antibody arrays to provide a quantitative assessment of factors secreted by senescent cells. We show that human cells induced to senesce by genotoxic stress secrete myriad factors associated with inflammation and malignancy. This senescence-associated secretory phenotype (SASP) developed slowly over several days and only after DNA damage of sufficient magnitude to induce senescence. Remarkably similar SASPs developed in normal fibroblasts, normal epithelial cells, and epithelial tumor cells after genotoxic stress in culture, and in epithelial tumor cells in vivo after treatment of prostate cancer patients with DNA-damaging chemotherapy. In cultured premalignant epithelial cells, SASPs induced an epithelial-mesenchyme transition and invasiveness, hallmarks of malignancy, by a paracrine mechanism that depended largely on the SASP factors interleukin (IL)-6 and IL-8. Strikingly, two manipulations markedly amplified, and accelerated development of, the SASPs: oncogenic RAS expression, which causes genotoxic stress and senescence in normal cells, and functional loss of the p53 tumor suppressor protein. Both loss of p53 and gain of oncogenic RAS also exacerbated the promalignant paracrine activities of the SASPs. Our findings define a central feature of genotoxic stress-induced senescence. Moreover, they suggest a cell-nonautonomous mechanism by which p53 can restrain, and oncogenic RAS can promote, the development of age-related cancer by altering the tissue microenvironment.

Coppé, Jean-Philippe; Patil, Christopher; Rodier, Francis; Sun, Yu; Munoz, Denise; Goldstein, Joshua; Nelson, Peter; Desprez, Pierre-Yves; Campisi, Judith

2008-10-24T23:59:59.000Z

102

Effects of Bi doping on the thermoelectric properties of ? -Zn 4 Sb 3  

Science Journals Connector (OSTI)

The thermoelectricproperties of Bi-doped compounds ( Zn 1 ? x Bi x ) 4 Sb 3 ( x = 0 0.0025 0.005 0.01 ) were studied experimentally as well as theoretically. The results indicate that low-temperature ( T 9975 Bi 0.0025 ) 4 Sb 3 reduces remarkably as compared with that of Zn 4 Sb 3 due to enhanced phonon scattering of impurity (dopant).Electrical resistivity and Seebeck coefficient increase monotonically with increase in the Bi content resulting mainly from decrease in carrier concentration. Moreover first-principle calculations were performed on the occupation options of Bi atoms in ? -Zn 4 Sb 3 which show that Bi will preferentially occupy the Zn sites and not Sb sites and act as donors being consistent with the experimental observations. In addition the lightly doped compound ( Zn 0.9975 Bi 0.0025 ) 4 Sb 3 exhibits the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient whose figure of merit Z T is about 1.5 times larger than that of ? -Zn 4 Sb 3 at 300 K.

X. Y. Qin; M. Liu; L. Pan; H. X. Xin; J. H. Sun; Q. Q. Wang

2011-01-01T23:59:59.000Z

103

Optical Fibers Optics and Photonics  

E-Print Network (OSTI)

Optical Fibers Optics and Photonics Dr. Palffy-Muhoray Ines Busuladzic Department of Theoretical and Applied Mathematics The University of Akron April 21, 2008 #12;Outline · History of optical fibers · What are optical fibers? · How are optical fibers made? · Light propagation through optical fibers · Application

Palffy-Muhoray, Peter

104

Electronic and structural response of InSb to ultra-short and ultra-intense laser pulses  

E-Print Network (OSTI)

intensity of Ac 2. 00 gauss. cm. lrn(&(l'1)) for lnSb for a field intensity of A&i ? 2. 23 gauss cm. Im(e(E)) for InSb for a field intensity of A&i -- 2. 40 gauss cm. hn(e(E)) for InSb for a field intensity of A&i 2. 82 gauss cm. Im(&(E)) for InSb for a...-correlation function for InSb for a field intcnsit, y of Ac ? 2. 00 gauss cin. 21 Tiiiic. cvoluti&m of thc pair-correlation function for lnSb for a field intensity of As = 2. 46 gauss cm. 44 Time evolution of the pair-correlation function for InSb for a field...

Burzo, Andrea Mihaela

2001-01-01T23:59:59.000Z

105

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction  

Science Journals Connector (OSTI)

We report a nondestructive large-area method to characterize dislocation formation at a highly lattice-mismatched interface. The analysis is based on x-ray diffraction and reciprocal space mapping using a standard lab-based diffractometer. We use this technique to identify and analyze a two-dimensional array of 90° misfit dislocations at a GaSb/GaAs interface. The full width at half maximum of the GaSb 004 reciprocal lattice point is shown to decrease with increasing GaSb epilayer thickness as expected from theoretical models. Based on these measurements the variation in the spatial dislocation frequency is calculated to be 1%.

Charles J. Reyner; Jin Wang; Kalyan Nunna; Andrew Lin; Baolai Liang; Mark S. Goorsky; D. L. Huffaker

2011-01-01T23:59:59.000Z

106

Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes  

SciTech Connect

InAs/InAs{sub 0.88}Sb{sub 0.12}/InAs{sub 0.50}Sb{sub 0.20}P{sub 0.30} heterostructure photodiodes operating at room temperature in the spectral range 1-4.8 {mu}m are developed. It is shown that the formation of a curvilinear reflecting surface constituted by a number of hemispheres on the rearside of the photodiode chip leads to an increase in the quantum sensitivity of the photodiodes by a factor of 1.5-1.7 at wavelengths in the range 2.2-4.8 {mu}m. At an exposed photodiode area of 0.9 mm{sup 2} and a p-n junction area of 0.15 mm{sup 2}, a zero-bias differential resistance of 30 {Omega} and a quantum sensitivity of 0.24 electron/photon at a wavelength of 3 {mu}m are obtained. The operation of a photodiode with re-reflection of the photon flux in the crystal due to reflection from the curvilinear surface of the rearside of the photodiode chip is theoretically analyzed. The possibility of effective conversion of the re-reflected flux of photons into a photocurrent, with a simultaneous decrease in the p-n junction area, is demonstrated. An increase in the quantum sensitivity in the short-wavelength spectral range 1-2.2 {mu}m by 35% relative to the calculated data is observed, which is probably due to impact ionization in the narrow-gap active region.

Imenkov, A. N.; Grebenshchikova, E. A., E-mail: eagr.iropt7@mail.ioffe.ru; Starostenko, D. A.; Sherstnev, V. V.; Konovalov, G. G.; Andreev, I. A.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-05-15T23:59:59.000Z

107

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

108

The tin impurity in Bi0.5Sb1.5Te3 alloys  

Energy.gov (U.S. Department of Energy (DOE))

Extends work on tin to p-type thermoelectric alloys of formula Bi(2-x)Sb(x)Te(3) doped with Sn. Both single crystals and polycrystals prepared using powder metallurgical techniques are studied and properties reported.

109

Structural and Magnetic Properties of Co-Mn-Sb Thin films  

SciTech Connect

Thin Co-Mn-Sb films of different compositions were investigated and utilized as electrodes in alumina based magnetic tunnel junctions with CoFe counterelectrode. The preparation conditions were optimized with respect to magnetic and structural properties. The Co-Mn-Sb/Al-O interface was analyzed by x-ray absorption spectroscopy and magnetic circular dichroism with particular focus on the element-specific magnetic moments. Co-Mn-Sb crystallizes in different complex cubic structures depending on its composition. The magnetic moments of Co and Mn are ferromagnetically coupled in all cases. A tunnel magnetoresistance ratio of up to 24% at 13 K was found and indicates that Co-Mn-Sb is not a ferromagnetic half-metal. These results are compared to recent works on the structure and predictions of the electronic properties.

Meinert, M.; Schmalhorst, J.-M.; Ebke, D.; Liu, N. N.; Thomas, A.; Reiss, G.; Kanak, J.; Stobiecki, T.; Arenholz, E.

2009-12-17T23:59:59.000Z

110

Structural transformation of Sb-based high-speed phase-change material  

Science Journals Connector (OSTI)

On heating, amorphous Ag3.1In3.7Sb76.4Te16.5 crystallizes at 416 K in an A7 structure type with atomic sites randomly occupied by the four constituent elements. At 545 K the compound decomposes into two crystalline phases: AgInTe2 is stable up to the melting point, while Sb89Te11 has a modulated layer structure with a temperature-dependent layer period.

Matsunaga, T.

2012-10-23T23:59:59.000Z

111

Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001)  

SciTech Connect

The formation of defects during the initial stages of native-oxide growth on the GaSb (001)-?(4?×?3) surface has been studied computationally using spin-unrestricted density functional theory. It is found that insertion into a Ga-Sb adatom dimer to form a peroxo Ga-O-O-Sb bridge is the most energetically favorable process with insertion into Ga-Sb back-bonds being somewhat less so. A Ga-O-O-Ga bridge between dimers is also favorable, but Sb-O-O-Sb bridges show little if any stability. In the course of analyzing molecular adsorption, a particularly reactive site has been identified that leads to O{sub 2} dissociation with little or no barrier. This process is initiated in the vicinity of an Sb-Sb dimer in the terminating layer and leads to sub-surface Ga and Sb defect sites (i.e., coordinatively unsaturated atoms) and to strained Ga-Sb bonds that may be susceptible to further O{sub 2} attack. However, the defects formed in these reactions do not produce states in the gap.

Bermudez, V. M., E-mail: victor.bermudez@nrl.navy.mil [Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375 (United States)

2014-04-07T23:59:59.000Z

112

JOURNAL DE PHYSIQUE CoZZoque C8, supplgment au n08, Tome 42, aoGt 2980, page C8-519 ELECTRICAL RESISTIVITY AND THERMOELECTRIC POWER OF LIQUID Ge-Sb AND Pb-Sb ALLOYS  

E-Print Network (OSTI)

Fig. 1. v Electrical resistivity of liquid Pbl-x~bx alloys as a function of temperature. the liquid were quoted as dt%Sb Fig. 2. - Electrical resistivity of liquid Pb-Sb alloys at 660°C and Ge-Sb alloysJOURNAL DE PHYSIQUE CoZZoque C8, supplgment au n08, Tome 42, aoGt 2980, page C8-519 ELECTRICAL

Boyer, Edmond

113

Beta-Decay Matrix Elements in Sb122  

Science Journals Connector (OSTI)

An electronic computer has been used to investigate the six nuclear matrix elements which enter into the 2- to 2+ 1.40-MeV beta transition in the decay of Sb122. Data from beta-gamma angular correlation, beta-circularly polarized gamma angular correlation, nuclear orientation, and nuclear resonance experiments were used in this analysis. As a further aid, the Feenberg-Ahrens relations between certain of the nuclear matrix elements were employed to catalog the solutions and to simplify the search problem. In order to discover how the remaining ambiguity of these solutions could most easily be reduced, for each of the solutions calculations were made of the predicted results of all possible experiments on this beta transition. These calculations show how sufficient experimental data can be obtained to determine unambiguously all six nuclear matrix elements. In an appendix all the theoretical formulas which give the experimental observables for a first forbidden 2- to 2+ beta transition in terms of the nuclear matrix elements are summarized.

F. M. Pipkin; J. Sanderson; W. Weyhmann

1963-03-15T23:59:59.000Z

114

Oxidation resistant coatings for CoSb3  

Science Journals Connector (OSTI)

Doped cobalt antimonides are used as components of thermoelectric devices at temperatures not exceeding 450 °C because of poor thermal and chemical stability. In absence of oxygen they degrade by sublimation of antimony while in air they easily oxidize to form volatile antimony oxides and non-volatile thick double oxide scales [1]. In both cases protective coatings are indispensable to ensure safe performance of thermoelectric devices over extended times. The most promising solution reported so far is a thick aerogel coating which practically stops antimony loss by sublimation. The assessment of coating effectiveness is generally based on thermogravimetric tests in vacuum so permeability of oxygen and protection from oxidation cannot be evaluated. The paper presents investigations on the development of protective coatings which would prevent oxidation of CoSb3. Two types of coatings were applied: magnetron sputtered Cr-Si thin layers [2] and thick enamel layers. Testing involved interrupted oxidation in air for 20-80 h at 500 °C and 600 °C. The Cr-Si thin layers appeared oxygen-tight at 500 °C while the enamel layers - even at 600 °C.

2012-01-01T23:59:59.000Z

115

PRELIMINARY FRIT DEVELOPMENT AND MELT RATE TESTING FOR SLUDGE BATCH 6 (SB6)  

SciTech Connect

The Liquid Waste Organization (LWO) provided the Savannah River National Laboratory (SRNL) with a Sludge Batch 6 (SB6) composition projection in March 2009. Based on this projection, frit development efforts were undertaken to gain insight into compositional effects on the predicted and measured properties of the glass waste form and to gain insight into frit components that may lead to improved melt rate for SB6-like compositions. A series of Sludge Batch 6 (SB6) based glasses was selected, fabricated and characterized in this study to better understand the ability of frit compositions to accommodate uncertainty in the projected SB6 composition. Acceptable glasses (compositions where the Product Composition Control System (PCCS) Measurement Acceptability Region (MAR) predicted acceptable properties, good chemical durability was measured, and no detrimental nepheline crystallization was observed) can be made using Frit 418 with SB6 over a range of Na{sub 2}O and Al{sub 2}O{sub 3} concentrations. However, the ability to accommodate variation in the sludge composition limits the ability to utilize alternative frits for potential improvements in melt rate. Frit 535, which may offer improvements in melt rate due to its increased B2O3 concentration, produced acceptable glasses with the baseline SB6 composition at waste loadings of 34 and 42%. However, the PCCS MAR results showed that it is not as robust as Frit 418 in accommodating variation in the sludge composition. Preliminary melt rate testing was completed in the Melt Rate Furnace (MRF) with four candidate frits for SB6. These four frits were selected to evaluate the impacts of B{sub 2}O{sub 3} and Na{sub 2}O concentrations in the frit relative to those of Frit 418, although they are not necessarily candidates for SB6 vitrification. Higher concentrations of B{sub 2}O{sub 3} in the frit relative to that of Frit 418 appeared to improve melt rate. However, when a higher concentration of B{sub 2}O{sub 3} was coupled with a lower concentration of Na{sub 2}O relative to Frit 418, melt rate did not appear to improve. It is expected that a SB6 composition projection with less uncertainty will be received during analysis of the Tank 51 E-1 sample, which will be pulled after the completion of aluminum dissolution in August 2009. At that time, additional frit development work will be performed to seek improved melt rates while maintaining viable projected operating windows. This later work will ultimately lead to a frit recommendation for SB6.

Fox, K.; Miller, D.; Edwards, T.

2009-07-21T23:59:59.000Z

116

Density functional simulations of phase change materials: disordered phases of Ge8Sb2Te11 and Ag/In/Sb/Te alloys  

E-Print Network (OSTI)

E*PCOS2009 Density functional simulations of phase change materials: disordered phases of Ge8Sb2Te75.0Te17.7 (AIST). These represent two families used widely as phase change materials: pseudobinary and more flexible than those of Ag. Key words: Phase change materials, density functional calculations

117

Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor phase epitaxy  

SciTech Connect

Studies on the materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for thermophotovoltaic (TPV) devices are reviewed. Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the n- and p-type dopants, respectively. The overall material quality of these alloys depends on growth temperature, In content, V/III ratio, substrate misorientation, and to a lesser extent, growth rate. A mirror-like surface morphology and room temperature photoluminescence (PL) are obtained for GaInAsSb layers with peak emission in the wavelength range between 2 and 2.5 {micro}m. The crystal quality improves for growth temperature decreasing from 575 to 525 C, and with decreasing In content, as based on epilayer surface morphology and low temperature PL spectra. A trend of smaller full width at half-maximum for low temperature PL spectra is observed as the growth rate is increased from 1.5 to 2.5 and 5 {micro}m/h. In general, GaInAsSb layers grown on (100) GaSb substrates with a 6{degree} toward (111)B misorientation exhibited overall better material quality than layers grown on the more standard substrate (100)2{degree} toward (110). Consistent growth of high performance lattice-matched GaInAsSb TPV devices is also demonstrated.

Wang, C.A.; Choi, H.K.; Oakley, D.C. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1998-06-01T23:59:59.000Z

118

OMVPE growth and characterization of GaInAsSb for thermophotovoltaics  

SciTech Connect

Studies on the materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for thermophotovoltaic (TPV) devices are reviewed. Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the n- and p-type dopants, respectively. The overall material quality of these alloys depends on growth temperature, In content, V/III ratio, substrate misorientation, and to a lesser extent, growth rate. A mirror-like surface morphology and room temperature photoluminescence (PL) are obtained for GaInAsSb layers with peak emission in the wavelength range between 2 and 2.5 {micro}m. The crystal quality improves for growth temperature decreasing from 575 to 525 C, and with decreasing In content, as based on epilayer surface morphology and low temperature PL spectra. A trend of smaller full width at half-maximum for low temperature PL spectra is observed as the growth rate is increased from 1.5 to 2.5 and 5 {micro}m/h. In general, GaInAsSb layers grown on (100) GaSb substrates with a 6{degree} toward (111)B misorientation exhibited overall better material quality than layers grown on the more standard substrate (100) 2{degree} toward (110). Consistent growth of high performance lattice-matched GaInAsSb TPV devices is also demonstrated.

Wang, C.A.; Charache, G.W.

1998-06-01T23:59:59.000Z

119

Atomic structure of amorphous and crystallized Ge{sub 15}Sb{sub 85}  

SciTech Connect

Ge{sub 15}Sb{sub 85} is a promising material for phase-change memory applications owing to its very short crystallization times. As deposited amorphous samples of sputter deposited Ge{sub 15}Sb{sub 85} have been investigated by extended x-ray absorption fine structure (EXAFS) measurements on both, Sb and Ge K absorption edges. After crystallizing the specimen, x-ray diffraction (XRD) and EXAFS measurements have been performed to analyze the atomic structure at different annealing conditions. Thus, experimental techniques focusing on the long range order as well as on the local order have been combined. Sb atoms have on average 3.2(2) nearest neighbors, while Ge atoms have 4.0(3). The Ge-Ge and Ge-Sb bond lengths are determined to 2.46(2) and 2.66(1) A, respectively and agree well with those observed in the amorphous phase of the common phase-change material Ge{sub 2}Sb{sub 2}Te{sub 5}. After crystallizing the sample at 250 deg. C, very different EXAFS spectra with modified Ge-Sb bond lengths are observed. The higher concentration of Ge neighbors at the Ge edge as compared to the as-deposited sample is indicative for phase separation. For the corresponding sample, XRD does not show reflections of Ge, which indicates that the agglomeration of Ge is amorphous or below the coherence length of the x-radiation. The EXAFS spectrum shows a superposition of two phases: one with bond lengths which agree with sp{sup 3}-hybridized Ge [2.43(1) A] and another one with longer Ge-Ge bond lengths [2.79(8) A]. This result can be explained by phase separation in the material.

Zalden, Peter; Eijk, Julia van; Wuttig, Matthias [I. Physikalisches Institut (IA), RWTH Aachen, 52056 Aachen (Germany); Bichara, Christophe [CiNaM-Centre Interdisciplinaire de Nanoscience de Marseille, Campus de Luminy, 13288 Marseille (France); Braun, Carolin; Bensch, Wolfgang [Institut fuer Anorganische Chemie, Universitaet Kiel, Max-Eyth Str. 2, 24118 Kiel (Germany)

2010-05-15T23:59:59.000Z

120

OPTICS5  

NLE Websites -- All DOE Office Websites (Extended Search)

Optics5 (5.1.02) Knowledge Base Optics5 (5.1.02) Knowledge Base Last Updated: 09/11/13 Table of Contents INSTALLATION EXECUTION bullet ** Operating Systems -- Microsoft Windows 7 and Vista ** bullet ** Running Optics5 with Microsoft Windows 7 and Vista ** bullet ** Running Optics5 with Microsoft Windows 7 and Vista 64 bit ** Optics5 may not work correctly with regional/locale settings using "," as a decimal separator. bullet Which Windows operating systems can be used to run Optics? "Class Does Not Support Automation or Expected Interface" error message bullet How much hard disk space should be available to install Optics? Optics user manual bullet I receive a virus warning (nimda-virus) when installing Optics. What should I do? NFRC Procedure for Applied Films bullet I have installed Optics but I can't find the program or the icon.

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

The 2.2 Å crystal structure of the Ras-binding domain of the serine/threonine kinase c-Raf1 in complex with RaplA and a GTP analogue  

Science Journals Connector (OSTI)

... oncogene21. Further evidence for a possible role of RaplA in Ras signalling comes from theroughened mutation in Drosophila^ which is a mutation of Rap (phenylalanine to leucine at position ... 161. Phe 158 corresponds to Phe 157 of Drosophila Rap, whose mutation to Leu (Roughened) produces a defect in the Sevenless signalling pathway, which acts via Ras22. b, ...

Nicolas Nassar; Gudrun Horn; Christian A. Herrmann; Anna Scherer; Frank McCormick; Alfred Wittinghofer

1995-06-15T23:59:59.000Z

122

Performance Study of K2CsSb Photocathode Inside a DC High Voltage Gun  

SciTech Connect

In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K{sub 2}CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the K{sub 2}CsSb photocathode inside a DC gun. Since the multialkali cathode is a compound with constant characteristics over its entire thickness, we anticipate that the lifetime issues seen in GaAs:Cs due to surface damage by ion bombardment would be minimized. Hence successful operation of the K{sub 2}CsSb cathode in a DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of a K{sub 2}CsSb cathode in a DC gun, we have designed and built a load lock system that allows the fabrication of the cathode at Brookhaven National Lab (BNL) and its testing at Jefferson Lab (JLab). In this paper, we will present the performance of the K{sub 2}CsSb photocathode in the preparation chamber and in the DC gun.

McCarter J. L.; Rao T.; Smedley, J.; Grames, J.; Mammei, R.; Poelker, M.; Suleiman, R.

2011-09-01T23:59:59.000Z

123

Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy  

SciTech Connect

A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 - 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.

Hosseini Vajargah, S.; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Preston, J. S.; Kleiman, R. N. [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2012-11-01T23:59:59.000Z

124

Surface core-level shift of InSb(111)-2×2  

Science Journals Connector (OSTI)

Surface core-level photoemission of InSb(111)-2×2 was performed using a synchrotron radiation light source. There were two surface components of the In 4d core level. A higher binding component of In 4d is attributed to the surface In bonded to Sb atoms. The lower binding component with smaller intensity is due to the surface In cluster atoms. On the other hand, we were not able to observe any surface components in the Sb 4d core level. This puzzling behavior is interpreted with a different contribution of surface and bulk Madelung potential to the surface core-level shifts in relation with the atomic geometry. © 1996 The American Physical Society.

Jeong Won Kim; Sehun Kim; Jae Myung Seo; Shin-ichiro Tanaka; Masao Kamada

1996-08-15T23:59:59.000Z

125

Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization  

SciTech Connect

In this communication we report on electrical properties of nonintentionally doped (nid) type II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple technological process which, thanks to the suppression of substrate, allows direct Hall measurement on superlattice structures grown on conductive GaSb substrate. Two samples were used to characterize the transport: one grown on a semi-insulating GaAs substrate and another grown on n-GaSb substrate where a etch stop layer was inserted to remove the conductive substrate. Mobilities and carrier concentrations have been measured as a function of temperature (77-300 K), and compared with capacitance-voltage characteristic at 80 K of a photodiode comprising a similar nid superlattice.

Cervera, C.; Rodriguez, J. B.; Perez, J. P.; Aiet-Kaci, H.; Chaghi, R.; Christol, P. [Institut d'Electronique du Sud (IES), UMR CNRS 5214, Case 067, Universite Montpellier 2, 34095 Montpellier Cedex 05 (France); Konczewicz, L.; Contreras, S. [Groupe d'Etude des Semiconducteurs (GES), UMR CNRS 5650, Case 074, Universite Montpellier 2, 34095 Montpellier Cedex 5 (France)

2009-08-01T23:59:59.000Z

126

Electrical characteristics and thermal stability of HfO{sub 2} metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces  

SciTech Connect

HfO{sub 2}/GaSb interfaces fabricated by high-vacuum HfO{sub 2} deposition on clean reconstructed GaSb surfaces were examined to explore a thermally stable GaSb metal-oxide-semiconductor structure with low interface-state density (D{sub it}). Interface Sb-O bonds were electrically and thermally unstable, and post-metallization annealing at temperatures higher than 200?°C was required to stabilize the HfO{sub 2}/GaSb interfaces. However, the annealing led to large D{sub it} in the upper-half band gap. We propose that the decomposition products that are associated with elemental Sb atoms act as interface states, since a clear correlation between the D{sub it} and the Sb coverage on the initial GaSb surfaces was observed.

Miyata, Noriyuki, E-mail: nori.miyata@aist.go.jp; Mori, Takahiro; Yasuda, Tetsuji [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ohtake, Akihiro [National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Ichikawa, Masakazu [The University of Tokyo, Tokyo 113-8656 (Japan)

2014-06-09T23:59:59.000Z

127

Nonimaging Optics  

Science Journals Connector (OSTI)

The nonimaging optical system, by definition, does not produce an image of the light source. Instead, it is designed to concentrate radiation at a density as high as theoretically possible. Nonimaging optics h...

Dr. Ralf Leutz; Dr. Akio Suzuki

2001-01-01T23:59:59.000Z

128

Optical Switch  

NLE Websites -- All DOE Office Websites (Extended Search)

seven wonders Optical Switch A key component in the laser chain, an optical switch called a plasma electrode Pockels cell (PEPC), was invented and developed at LLNL. A Pockels cell...

129

Synthesis and Characterization of Ag-or Sb-Doped ZnO Nanorods by a Facile Hydrothermal Route  

E-Print Network (OSTI)

Synthesis and Characterization of Ag- or Sb-Doped ZnO Nanorods by a Facile Hydrothermal Route Oleg Stefan Cel Mare BouleVard, MD-2004 Chisinau, Republic of MoldoVa, AdVanced Materials Processing ZnO nanorods doped with Ag and Sb have been synthesized by a facile hydrothermal technique. Crystal

Kik, Pieter

130

Evaluation Of Glass Density To Support The Estimation Of Fissile Mass Loadings From Iron Concentrations In SB8 Glasses  

SciTech Connect

The Department of Energy – Savannah River (DOE-SR) has provided direction to Savannah River Remediation (SRR) to maintain fissile concentration in glass below 897 g/m{sup 3}. In support of that guidance, the Savannah River National Laboratory (SRNL) provided a technical basis and a supporting Microsoft® Excel® spreadsheet for the evaluation of fissile loading in Sludge Batch 5 (SB5), Sludge Batch 6 (SB6), Sludge Batch 7a (SB7a), and Sludge Batch 7b (SB7b) glass based on the iron (Fe) concentration in glass as determined by the measurements from the Slurry Mix Evaporator (SME) acceptability analysis. SRR has since requested that the necessary density information be provided to allow SRR to update the Excel® spreadsheet so that it may be used to maintain fissile concentration in glass below 897 g/m{sup 3} during the processing of Sludge Batch 8 (SB8). One of the primary inputs into the fissile loading spreadsheet includes an upper bound for the density of SB8-based glasses. Thus, these bounding density values are to be used to assess the fissile concentration in this glass system. It should be noted that no changes are needed to the underlying structure of the Excel-based spreadsheet to support fissile assessments for SB8. However, SRR should update the other key inputs to the spreadsheet that are based on fissile and Fe concentrations reported from the SB8 Waste Acceptance Product Specification (WAPS) sample.

Edwards, T. B.; Peeler, D. K.; Kot, W. K.; Gan, H.; Pegg, I. L.

2013-04-30T23:59:59.000Z

131

Genomic and Transcriptomic Analyses of the Facultative Methanotroph Methylocystis sp. Strain SB2 Grown on Methane or Ethanol  

Science Journals Connector (OSTI)

...Methylocystis sp. Strain SB2 Grown on Methane or Ethanol Alexey Vorobev a Sheeja Jagadevan a Sunit...cultures grown with either methane or ethanol. Evidence for use of the canonical methane...Methylocystis sp. strain SB2 grown with ethanol compared to methane revealed that on ethanol...

Alexey Vorobev; Sheeja Jagadevan; Sunit Jain; Karthik Anantharaman; Gregory J. Dick; Stéphane Vuilleumier; Jeremy D. Semrau

2014-03-07T23:59:59.000Z

132

MicroRNAs 206 and 21 Cooperate To Promote RAS–Extracellular Signal-Regulated Kinase Signaling by Suppressing the Translation of RASA1 and SPRED1  

Science Journals Connector (OSTI)

...the WT 3 UTR, as indicated by the mfold Web Server (66). Oligonucleotides for PCR...RAS oncogenes: weaving a tumorigenic web. Nat. Rev. Cancer 11 :761-774. doi...08.013 . 66. Zuker, M . 2003. Mfold web server for nucleic acid folding and hybridization...

Sriganesh B. Sharma; Chen-Chung Lin; Mark K. Farrugia; Sarah L. McLaughlin; Emily J. Ellis; Kathleen M. Brundage; Mohamad A. Salkeni; J. Michael Ruppert

2014-09-08T23:59:59.000Z

133

K-ras Proto-Oncogene Exhibits Tumor Suppressor Activity As Its Absence Promotes Tumorigenesis in Murine Teratomas1 The Cancer Research Campaign (now Cancer Research UK).  

Science Journals Connector (OSTI)

...reconstructed by stable expression of mini-genes encoding either wild-type...were transfected with K-ras mini-genes that expressed either...point counting method using 50 grid-based points placed randomly...for each teratoma) with each grid point scored according to whether...

Roberta M. James; Mark J. Arends; Sarah J. Plowman; David G. Brooks; Colin G. Miles; John D. West; and Charles E. Patek

2003-09-01T23:59:59.000Z

134

Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells  

SciTech Connect

The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk conductivity by using gallium source materials of different degrees of impurity concentrations. While highest-purity gallium is accompanied by clear conduction through the sample bulk, intentional impurity incorporation leads to a bulk resistance over 1 M?, independent of applied magnetic fields. In addition, ultra high electron mobilities for GaAs/AlGaAs structures fabricated in a molecular beam epitaxy system used for the growth of Sb-based samples are reported.

Charpentier, Christophe; Fält, Stefan; Reichl, Christian; Nichele, Fabrizio; Nath Pal, Atindra; Pietsch, Patrick; Ihn, Thomas; Ensslin, Klaus; Wegscheider, Werner [Laboratory for Solid State Physics, ETH Zürich, 8093 Zürich (Switzerland)] [Laboratory for Solid State Physics, ETH Zürich, 8093 Zürich (Switzerland)

2013-09-09T23:59:59.000Z

135

JOURNAL DE PHYSIQUE Colloque Cl, supplment au no 1 , Tome 35, Janvier 1974, page Cl-43 TUDE DES STRUCTURES MAGNTIQUES DE CeSb ET GdSb  

E-Print Network (OSTI)

champ hyperfin transféré (H,,,) au site du noyau de I'ion non magnétique (l'ion Sb dans le cas présent noyau de I'ion non iiiagnétique est nul si l'ordre magnétique est du type I I ; il est différent de zéro

Boyer, Edmond

136

Carrier lifetime reduction in 1.5 m AlGaAsSb saturable absorbers with air and AlAsSb barriers  

E-Print Network (OSTI)

The SESAM structures consist of a 60-period InGaAsP/InP distributed Bragg reflector DBR and a 7-nm-thick Al exponential carrier decay time of 20 ps can be achieved. The studied AlGaAsSb absorbers were deposited on InGaAsP depth, the saturation fluence, the inverse absorption, the nonsaturable absorption, and the carrier de

Keller, Ursula

137

Electrical and thermoelectric properties of 90% Bi{sub 2}Te{sub 3}-5% Sb{sub 2}Te{sub 3}-5% Sb{sub 2}Se{sub 3} single crystals doped with SbI{sub 3}  

SciTech Connect

Bi{sub 2}Te{sub 3}-Sb{sub 2}Te{sub 3}-Sb{sub 2}Se{sub 3} alloys with Sb{sub 2}Te{sub 3} and Sb{sub 2}Se{sub 3} contents up to 10 mol%, e.g., the 90% Bi{sub 2}Te{sub 3}-5% Sb{sub 2}Te{sub 3}-5% Sb{sub 2}Se{sub 3} alloy, are among the best n-type thermoelectric materials for Peltier coolers used near room temperature. In this work, the electrical and thermoelectric properties of Sbl{sub 3}doped 90% Bi{sub 2}Te{sub 3}-5% Sb{sub 2}Te{sub 3}-5% Sb{sub 2}Se{sub 3} alloys were characterized at temperatures ranging from 80K to 600K. The temperature dependencies of the Hall coefficient, carrier mobility, Seebeck coefficient and thermal conductivity were measured, and the scattering parameter and bandgap energy were determined.

Hyun, D.B.; Hwang, J.S.; Shim, J.D.; Kolomoets, N.V. [Korea Inst. of Science and Technology, Seoul (Korea, Republic of). Div. of Metals] [Korea Inst. of Science and Technology, Seoul (Korea, Republic of). Div. of Metals; Oh, T.S. [Hong Ik Univ., Seoul (Korea, Republic of). Dept. of Metallurgy and Materials Science] [Hong Ik Univ., Seoul (Korea, Republic of). Dept. of Metallurgy and Materials Science

1998-12-04T23:59:59.000Z

138

TiSnSb a new efficient negative electrode for Li-ion batteries: mechanism investigations by operando-XRD and Mossbauer techniques  

E-Print Network (OSTI)

TiSnSb a new efficient negative electrode for Li-ion batteries: mechanism investigations We report the electrochemical study of TiSnSb towards Li, as a negative electrode for Li-ion batteries. TiSnSb can reversibly take up more than 5 lithiums per formula unit leading to reversible

Boyer, Edmond

139

Study of the shape of an optical window in a super-resolution state by electromagnetic-thermal coupled simulation: Effects of melting of an active layer in an optical disc  

SciTech Connect

We performed a multi-physics simulation for the propagation of electromagnetic waves and heat conduction in a super-resolution optical disc that includes an active layer of InSb. Because the change in the optical constant of InSb due to the phase transition is taken into account, the melting of the active layer can be realistically simulated in our calculation. It was found that in the case of an incident light power (P) of 2 mW, a profile of the electric field intensity transmitted through the InSb layer has an asymmetric shape with a narrow peak. This beam-narrowing was suggested to be an essential mechanism of the super-resolution, because a narrower light beam allows the detection of a smaller pit structure than the optical diffraction limit. This beam-narrowing was found to be originating from a small molten region produced in the InSb layer, which works as a mask for light exposure.

Sano, Haruyuki, E-mail: h-sano@ishikawa-nct.ac.jp [Ishikawa National College of Technology, Kitacyujo, Tsubata, Ishikawa 929-0392 (Japan); Shima, Takayuki; Kuwahara, Masashi [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565 (Japan); Fujita, Yoshiya; Uchiyama, Munehisa; Aono, Yoshiyuki [Pulstec Industrial Co., Ltd., 7000-35, Nakagawa, Hosoe-cho, Kita-ku, Hamamatsu 431-1304 (Japan)

2014-04-21T23:59:59.000Z

140

A novel approach for the improvement of open circuit voltage and fill factor of InGaAsSb/GaSb thermophotovoltaic cells  

SciTech Connect

Heterojunction n-Al{sub 0.25}Ga{sub 0.75}As{sub 0.02}Sb{sub 098}/p-In{sub 0.16}Ga{sub 0.84}As{sub 0.04}Sb{sub 0.96} thermophotovoltaic (TPV) cells were grown by molecular-beam epitaxy on n-GaSb-substrates. In the spectral range from 1 {micro}m to 2.1 {micro}m these cells, as well as homojunction n-p-In{sub 0.16}Ga{sub 0.84}As{sub 0.04}Sb{sub 0.96} cells, have demonstrated internal quantum efficiencies exceeding 80%, despite about a 200 meV barrier in the conduction band at the heterointerface. Estimation shows that the thermal emission of the electrons photogenerated in p-region over this barrier can provide high efficiency for hetero-cells if the electron recombination time in p-In{sub 0.16}Ga{sub 0.84}As{sub 0.04}Sb{sub 0.96}is longer than 10 ns. Keeping the same internal efficiency as homojunction cells, hetero-cells provide a unique opportunity to decrease the dark forward current and thereby increase open circuit voltage (V{sub {proportional_to}}) and fill factor at a given illumination level. It is shown that the decrease of the forward current in hetero-cells is due to the lower recombination rate in n-type wider-bandgap space-charge region and to the suppression of the hole component of the forward current. The improvement in V{sub {proportional_to}} reaches 100% at illumination level equivalent to 1 mA/cm{sup 2} and it decreases to 5% at the highest illumination levels (2--3 A/cm{sup 2}), where the electron current component dominates in both the homo- and heterojunction cells. Values of V{sub {proportional_to}} as high as 310 meV have been obtained for a hetero-cell at illumination levels of 3 A/cm{sup 2}. Under this condition, the expected fill factor value is about 72% for a hetero-cell with improved series resistance. The heterojunction concept provides excellent prospects for further reduction of the dark forward current in TPV cells.

Garbuzov, D.Z.; Martinelli, R.U.; Khalfin, V.; Lee, H.; Morris, N.A.; Taylor, G.C.; Connolly, J.C. [Sarnoff Corp., Princeton, NJ (United States); Charache, G.W.; DePoy, D.M. [Lockheed-Martin, Inc., Schenectady, NY (United States)

1997-10-01T23:59:59.000Z

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141

Performance Study of K2CsSb Photocathode inside a DC High Voltage Gun  

SciTech Connect

In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K2CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the GaAs:Cs in RF injector and the K2CsSb cathode in the DC gun in order to widen our choices. Since the multialkali cathode is a compound with uniform stochiometry over its entire thickness, we anticipate that the life time issues seen in GaAs:Cs due surface damage by ion bombardment would be minimized with this material. Hence successful operation of the K2CsSb cathode in DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of K2CsSb cathode in a DC gun, we have designed and built a load lock system that would allow the fabrication of the cathode at BNL and its testing at JLab. In this paper, we will present the design of the load-lock system, cathode fabrication, and the cathode performance in the preparation chamber and in the DC gun.

T. Rao, J. Smedley, J.M. Grames, R. Mammei, J.L. McCarter, M. Poelker, R. Suleiman

2011-03-01T23:59:59.000Z

142

Thermophotovoltaic furnace–generator for the home using low bandgap GaSb cells  

Science Journals Connector (OSTI)

It is well known that distributed combined heat and power (CHP) systems for commercial and industrial buildings are economically desirable because they conserve energy. Here, a thermophotovoltaic (TPV) unit is described that brings CHP into the home providing both heat and electric power by replacing the typical home heating furnace with a combined TPV furnace–generator. First, the design of a 1.5 kWelectric/12.2 kWthermal TPV furnace–generator is described along with the key components that make it possible. Diffused junction GaSb cells are one of these key components. Secondly, an economic cost target is determined for this system where the cost of the photovoltaic array will be key to the economical implementation of this concept. Finally, it is argued that the GaSb cells and arrays can be manufactured at the required low cost. The cost target can be reached because the GaSb cells in the TPV furnace–generator can produce an electrical power density of 1 W cm?2 which is 100 times higher than the typical solar cell. The cost target can also be reached because the GaSb cell fabrication process parallels the silicon solar cell process where no toxic gases are used, no wafer polish is required and cast polycrystalline cells can be used.

L M Fraas; J E Avery; H X Huang

2003-01-01T23:59:59.000Z

143

Development of Nanostructures in Thermoelectric Pb-Te-Sb Alloys , L. A. Collins2  

E-Print Network (OSTI)

in the figure of merit of thermoelectric materials. Fabrication of nanostructured thermoelectric materials via the discovery of materials with a high thermoelectric figure of merit, zT, defined as S2 T/, where immiscible thermoelectric materials: PbTe-Sb2Te3. This ternary system was selected for investigation because

144

0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology  

SciTech Connect

Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures.

MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

2004-06-09T23:59:59.000Z

145

Semimetallic antiferromagnetism in the half-Heusler compound CuMnSb Ruben Weht,2  

E-Print Network (OSTI)

CuMnSb, the first antiferromagnet AFM in the Mn-based class of Heuslers and half-Heuslers that contains several conventional and half metallic ferromagnets, shows a peculiar stability of its magnetic order in high magnetic fields. Density functional based studies reveal an unusual nature of its unstable

Pickett, Warren

146

Colorado State Forest Service SB09-020 --Responsibility for Responding to Wildland Fires  

E-Print Network (OSTI)

SB09-020 clarifies the roles and responsibilities of fire protection districts, county sheriffs and responsibilities progressively from local jurisdiction to fire protection district jurisdiction to county: · The fire chief of the fire protection district is responsible for all fires, including wildland fires

147

Ambipolar Field Effect in Sb-Doped Bi2Se3 Nanoplates by Solvothermal Synthesis  

E-Print Network (OSTI)

ranging from electronics to energy conversion. Despite much exciting progress in the field, high and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025. The carrier concentration of these Bi2Se3 nanoplates is controlled by compensational Sb doping during

Cui, Yi

148

Grain refinement and texture development of cast bi90sb10 alloy via severe plastic deformation  

E-Print Network (OSTI)

recrystallization and causes the development of a bimodal microstructure consisting of fine grains (5-30 micron) and coarse grains (50-300 micron). ECAE processing of homogenizied Bi-Sb alloy causes grain refinement and produces a more uniform microstructure...

Im, Jae-taek

2009-05-15T23:59:59.000Z

149

Molecular Beam Epitaxy on Gas Cluster Ion Beam Prepared GaSb Substrates: Towards Improved Surfaces and Interfaces  

SciTech Connect

A key problem in producing mid-infrared optoelectronic and low-power electronic devices in the GaSb material system is the lack of substrates with appropriate surfaces for epitaxial growth. Chemical mechanical polishing (CMP) of GaSb results in surface damage accompanied by tenacious oxides that do not easily desorb. To overcome this, we have developed a process using gas cluster ion beams (GCIB) to remove surface damage and produce engineered surface oxides. In this paper, we present surface modification results on GaSb substrates using O2-, CF4/O2-, and HBr-GCIB processes. X-ray photoelectron spectroscopy of GCIB produced surface layers showed the presence of mixed Ga- and Sb-oxides, with mostly Ga-oxides at the interface, desorbing at temperatures ranging 530°C to 560°C. Cross-sectional transmission electron microscopy of molecular beam epitaxy grown GaSb/AlGaSb layers showed that GCIB surfaces yielded smooth defect free substrate to epi transitions as compared to CMP surfaces. Furthermore, HBr-GCIB surfaces exhibited neither dislocation layers nor discernable interfaces, indicating complete oxide desorbtion prior to epigrowth on a clean single crystal template. Atomic force microscopy of GCIB epilayers exhibited smooth surfaces with characteristic step-terrace formations comprising monatomic steps and wide terraces. The HBr-GCIB process can be easily adapted to a large scale manufacturing process for epi-ready GaSb.

Krishnaswami, Kannan; Shivashankar, Vangala; Dauplaise, Helen; Allen, Lisa; Dallas, Gordon; Bakken, Daniel; Bliss, David; Goodhue, William

2008-04-01T23:59:59.000Z

150

Study of interatomic potential and thermal structural properties of ?-Zn{sub 4}Sb{sub 3}  

SciTech Connect

Highlights: ? The multi-body interatomic potentials of various models of ?-Zn{sub 4}Sb{sub 3} have been developed to describe atomic interactions. ? The radial distribution function shows that the 10% vacancy of Zn site leads to the disorder of ?-Zn{sub 4}Sb{sub 3}. ? The 10% vacancy of Zn site is the main cause of the exceptional low thermal conductivity. -- Abstract: Previous experimental research shows that the disordered Zn atoms in ?-Zn{sub 4}Sb{sub 3} may have an important influence on its exceptionally low thermal conductivity and easily occurred phase transition. So the present work aims to study the influence of disordered Zn atoms on thermodynamics properties of ?-Zn{sub 4}Sb{sub 3} by using molecular dynamics (MD) method. Firstly, based on first principles calculation and experimental results, the interatomic potentials of ?-Zn{sub 4}Sb{sub 3} and MD analysis method are established, and the feasibility is verified. Then, the influence of disordered Zn atoms on thermal conductivity of ?-Zn{sub 4}Sb{sub 3} is studied in detail. The simulation results indicate that the 10% vacant Zn atoms is the main reason for the exceptionally low thermal conductivity of ?-Zn{sub 4}Sb{sub 3}, and it seems that the interstitial Zn atoms have little effect on its thermal conductivity.

Li, Guodong [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China)] [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China); Li, Yao, E-mail: liyao06@126.com [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China)] [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China); Liu, Lisheng; Zhang, Qingjie; Zhai, Pengcheng [State Key Laboratory of Advanced Technology of Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology of Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)

2012-11-15T23:59:59.000Z

151

OPTICS 5  

NLE Websites -- All DOE Office Websites (Extended Search)

OPTICS (Version 5.1.02) OPTICS (Version 5.1.02) Release notes NOTE: See the Optics Knowledge Base for how to run this version of Optics on the Microsoft Vista and Microsoft Windows 7 operating systems March 5, 2003: Release Maintenance Pack 2 New ! January 7, 2003: Release Maintenance Pack 1 October 23, 2002: Release Optics 5.1.01 September 27, 2002: Release Optics 5.1.00 (only released on CDs at NFRC Annual Fall Meeting) Release notes Maintenance Pack 2 Bug fixes: New features: bullet Applied films that were created could not be saved or exported. This has been fixed. bullet Exporting glazing systems generated a message that the operation failed because the glazing system type is unknown. Glazing systems can now be exported to file (e.g. to view the spectral data), but the structure information will be lost.

152

Optical Magnetism  

Science Journals Connector (OSTI)

Magnetic dipole radiation one fourth as intense as electric dipole radiation, as well as a novel nonlinear magneto-optical effect are reported in dielectric media.

Oliveira, Samuel L; Rand, Stephen C

153

Optical Expanders with Applications in Optical Computing  

E-Print Network (OSTI)

Optical Expanders with Applications in Optical Computing John H. Reif Akitoshi Yoshida July 20, 1999 Abstract We describe and investigate an optical system which we call an optical expander. An optical expander elec- trooptically expands an optical boolean pattern encoded in d bits into an optical

Reif, John H.

154

Purification and characterization from rat liver cytosol of a GDP dissociation inhibitor (GDI) for liver 24K G, a ras p21-like GTP-binding protein, with properties similar to those of smg p25A GDI  

Science Journals Connector (OSTI)

Purification and characterization from rat liver cytosol of a GDP dissociation inhibitor (GDI) for liver 24K G, a ras p21-like GTP-binding protein, with properties similar to those of smg p25A GDI ...

Takashi Ueda; Yoshifumi Takeyama; Toshihiko Ohmori; Harumasa Ohyanagi; Yoichi Saitoh; Yoshimi Takai

1991-01-01T23:59:59.000Z

155

Effects of germanium and nitrogen incorporation on crystallization of N-doped Ge{sub 2+x}Sb{sub 2}Te{sub 5} (x = 0,1) thin films for phase-change memory  

SciTech Connect

The phase-change behavior and microstructure changes of N-doped Ge{sub 3}Sb{sub 2}Te{sub 5}[N-GST(3/2/5)] and Ge{sub 2}Sb{sub 2}Te{sub 5}[GST(2/2/5)] films during the phase transition from an amorphous to a crystalline phase were studied using in situ temperature-dependent sheet resistance measurements, X-ray diffraction, and transmission electron microscopy. The optical band gaps of N-GST(3/2/5) films are higher than that of GST(2/2/5) film in both the amorphous and face-centered-cubic (fcc) phases. Ge nitride formation by X-ray photoelectron spectroscopy analysis increased the optical band gap and suppressed crystalline grain growth, resulting in an increase in the crystallization temperature and resistance in the fcc phase. As a result, the Ge- and N-doped GST(2/2/5) composite films can be considered as a promising material for phase-change memory application because of improved thermal stability and reduced power consumption.

Cheng Limin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of Chinese Academy of Sciences, Beijing 10080 (China); Wu Liangcai; Song Zhitang; Rao Feng; Peng Cheng; Yao Dongning; Liu Bo [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Xu Ling [National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)

2013-01-28T23:59:59.000Z

156

Temperature-dependent structural property and power factor of n type thermoelectric Bi{sub 0.90}Sb{sub 0.10} and Bi{sub 0.86}Sb{sub 0.14} alloys  

SciTech Connect

Thermal variation of structural property, linear thermal expansion coefficient (?), resistivity (?), thermopower (S), and power factor (PF) of polycrystalline Bi{sub 1-x}Sb{sub x} (x?=?0.10 and 0.14) samples are reported. Temperature-dependent powder diffraction experiments indicate that samples do not undergo any structural phase transition. Rietveld refinement technique has been used to perform detailed structural analysis. Temperature dependence of ? is found to be stronger for Bi{sub 0.90}Sb{sub 0.10}. Also, PF for direct band gap Bi{sub 0.90}Sb{sub 0.10} is higher as compared to that for indirect band gap Bi{sub 0.86}Sb{sub 0.14}. Role of electron-electron and electron-phonon scattering on ?, S, and PF has been discussed.

Malik, K.; Das, Diptasikha [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India)] [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India); Bandyopadhyay, S.; Banerjee, Aritra, E-mail: arbphy@caluniv.ac.in [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India) [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India); Center for Research in Nanoscience and Nanotechnology, University of Calcutta, JD-2, Sector-III, Saltlake City, Kolkata 700 098 (India); Mandal, P.; Srihari, Velaga [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India)] [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Deb, A. K. [Department of Physics, Raiganj College (University College), Uttar Dinajpur 733 134 (India)] [Department of Physics, Raiganj College (University College), Uttar Dinajpur 733 134 (India)

2013-12-09T23:59:59.000Z

157

Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy  

SciTech Connect

The interfacial misfit (IMF) dislocation array of an epitaxial GaSb film on a Si substrate has been imaged with high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The mismatch strain accommodation through dislocation formation has been investigated using geometric phase analysis (GPA) on HAADF-STEM images with atomic resolution to probe the defects' local strain distribution. These measurements indicate that the lattice parameter of the epitaxial film recovers its bulk value within three unit cells from the interface due to the relaxation through IMF dislocations. The atomic number contrast of the HAADF-STEM images and energy dispersive x-ray spectrometry illustrate the formation of islands of AlSb buffer layer along the interface. The role of the AlSb buffer layer in facilitating the GaSb film growth on Si is further elucidated by investigating the strain field of the islands with the GPA.

Vajargah, S. Hosseini; Couillard, M.; Cui, K. [Department of Material Science and Engineering, McMaster University, 1280 Main St. W., Hamilton, Ontario L8S 4M1 (Canada); Tavakoli, S. Ghanad; Robinson, B.; Kleiman, R. N.; Preston, J. S. [Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Botton, G. A. [Department of Material Science and Engineering, McMaster University, 1280 Main St. W., Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)

2011-02-21T23:59:59.000Z

158

Optical Glass  

Science Journals Connector (OSTI)

... space of time. In the forefront of such vital industries is the manufacture of optical glass. However great the other resources in men and material may be, it would be ... be, it would be quite impossible to wage successful warfare without adequate supplies of optical glass ior binocular field- ...

1919-03-27T23:59:59.000Z

159

Influence of N-doping on the thermal stability and switching speed of Zn15Sb85 phase change material  

Science Journals Connector (OSTI)

The phase change characteristics of nitrogen doping Zn15Sb85 thin films were investigated by in situ film resistance measurements. The crystallization temperature and activation energy for crystallization of thin...

Xiaoqin Zhu; Yifeng Hu; Hua Zou…

2014-11-01T23:59:59.000Z

160

Rujevac Sb-Pb-Zn-As polymetallic deposit, Boranja orefield, Western Serbia: native arsenic and arsenic mineralization  

Science Journals Connector (OSTI)

Rujevac is a low-temperature hydrothermal polymetallic Sb-Pb-Zn-As vein-type ore deposit, hosted within a volcanogenic-sedimentary zone situated in the Rujevac-Crvene Stene-Brezovica Diabase-Chert Formation (D...

Slobodan A. Radosavljevi?; Jovica N. Stojanovi?…

2014-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study  

SciTech Connect

We combine quantitative analyses of Z-contrast images with composition analyses employing atom probe tomography (APT) correlatively to provide a quantitative measurement of atomic scale interfacial intermixing in an InAs/GaSb superlattice (SL). Contributions from GaSb and InAs in the Z-contrast images are separated using an improved image processing technique. Correlation with high resolution APT composition analyses permits an examination of interfacial segregation of both cations and anions and their incorporation in the short period InAs/GaSb SL. Results revealed short, intermediate, and long-range intermixing of In, Ga, and Sb during molecular beam epitaxial growth and their distribution in the SL.

Kim, Honggyu; Meng Yifei; Zuo Jianmin [Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801 (United States); Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States); Rouviere, Jean-Luc [CEA/INAC/SP2M/LEMMA, 19 rue des Martyrs, 38 054 Grenoble (France); Isheim, Dieter; Seidman, David N. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Northwestern University Center for Atom-Probe Tomography (NUCAPT), Northwestern University, Evanston, Illinois 60208 (United States)

2013-03-14T23:59:59.000Z

162

Discussion on the Low Temperature Magnetothermal Conductivity in Lightly Doped Ge(Sb) and Ge(As)  

Science Journals Connector (OSTI)

Some time ago we reported1) measurements of magnetothermal conductivity in n-type Ge in the temperature range 1.3?T?...1): For Ge(Sb) with the field Bll ...o, is negative, increases in magnitude approximatel...

Leif Halbo

1976-01-01T23:59:59.000Z

163

Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)  

SciTech Connect

We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

Bremner, S. P. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia)] [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia); Ban, K.-Y.; Faleev, N. N.; Honsberg, C. B. [School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, Arizona 85287 (United States)] [School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, Arizona 85287 (United States); Smith, D. J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)] [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2013-09-14T23:59:59.000Z

164

Fiber optic coupled optical sensor  

DOE Patents (OSTI)

A displacement sensor includes a first optical fiber for radiating light to a target, and a second optical fiber for receiving light from the target. The end of the first fiber is adjacent and not axially aligned with the second fiber end. A lens focuses light from the first fiber onto the target and light from the target onto the second fiber.

Fleming, Kevin J. (Albuquerque, NM)

2001-01-01T23:59:59.000Z

165

Key experimental information on intermediate-range atomic structures in amorphous Ge2Sb2Te5 phase change material  

E-Print Network (OSTI)

.1063/1.3657139 Nature of phase transitions in crystalline and amorphous GeTe-Sb2Te3 phase change materials J. Chem. Phys on intermediate-range atomic structures in amorphous Ge2Sb2Te5 phase change material Shinya Hosokawa,1,2,a) Wolf change material Shinya Hosokawa, Wolf-Christian Pilgrim, Astrid Höhle, Daniel Szubrin, Nathalie Boudet

Paris-Sud XI, Université de

166

Nanodopant-Induced Band Modulation in AgPbmSbTe2+m-Type Nanocomposites  

SciTech Connect

We elucidate the fundamental physics of nanoscale dopants in narrow band-gap thermoelectric nanocomposites XPbmYTe2+m (X=Ag,Na; Y=Sb,Bi) using first-principles calculations. Our re- sults unveil distinct band-structure modulations, most notably a sizable band-gap widening driven by nanodopant-induced lattice strain and a band split-off at the conduction band minimum caused by the spin-orbit interaction of the dopant Sb or Bi atoms. Boltzmann transport calculations demon- strate that these band modulations have significant but competing effects on high-temperature elec- tron transport behavior. These results offer insights for understanding recent experimental findings and suggest principles for optimizing thermoelectric properties of narrow band-gap semiconductors.

Zhang, Yi [University of Nevada, Las Vegas; Ke, Xuezhi [University of Nevada, Las Vegas; Chen, Changfeng [University of Nevada, Las Vegas; Yang, Jihui [General Motors Corporation-R& D; Kent, Paul R [ORNL

2011-01-01T23:59:59.000Z

167

Doping dependence of thermoelectric performance in Mo3Sb7: first principles calculations  

SciTech Connect

We study the effects of doping Mo3Sb7 with transition metals (Ni,Fe,Co,Ru) via first principles calculations, including electronic structure, lattice dynamics and Boltzmann transport. We find heavy-mass bands and large, rapidly varying density-of-states, generally favorable for high thermopower, near the band gap of this material. Transport calculations predict large Seebeck coefficients exceeding 300 $\\mu$V/K in a wide temperature range above 500 K (a range suitable for waste heat recovery), if the material can be doped into a semiconducting state. These thermopowers are much higher than those that have previously been experimentally observed; we find that performance exceeding current limits may be found at lower carrier concentration than achieved presently. We also discuss the selection of dopant and the potential thermoelectric performance of optimally doped Mo3Sb7.

Singh, David J [ORNL; Parker, David S [ORNL; Du, Mao-Hua [ORNL

2011-01-01T23:59:59.000Z

168

Sb-free quantum cascade lasers in the 3–4 ?m spectral range  

Science Journals Connector (OSTI)

In this work, the design and implementation of Sb-free short wavelength strain-compensated quantum cascade lasers in the 3–4 ?m spectral range is presented. Due to the presence of highly strained AlAs-barrier layers, the optimization of the epitaxial growth process is firstly discussed. The used active region design is then presented together with the observed laser performance. Watt-level room temperature emission at 3.3 ?m is shown for Fabry–Perot devices and laser operation in pulsed mode is observed above 350 K. The laser performance is comparable with Sb-containing quantum cascade lasers. Spectral tuning of the lasers in an external cavity configuration over more than 275 cm?1 is achieved with an emission wavelength as short as 3.15 ?m. For the first time in this spectral range, results on single-mode buried heterostructure distributed feedback lasers are shown.

A Bismuto; S Riedi; B Hinkov; M Beck; J Faist

2012-01-01T23:59:59.000Z

169

Abundance analysis of SB2 binary stars with HgMn primaries  

E-Print Network (OSTI)

We present a short review of the abundances in the atmospheres of SB2 systems with Mercury-Manganese (HgMn) primaries. Up to now a careful study has been made for both components of 8 out of 17 known SB2 binaries with orbital periods shorter than 100 days and mass ratio ranging from 1.08 to 2.2. For all eight systems we observe a lower Mn abundance in the secondary's atmospheres than in the primary's. Significant difference in the abundances is also found for some peculiar elements such as Ga, Xe, Pt. All secondary stars with effective temperatures less than 10000 K show abundance characteristics typical of the metallic-line stars.

T. Ryabchikova

1998-05-06T23:59:59.000Z

170

Nonlinear optics  

E-Print Network (OSTI)

Nicolaas Bloembergen, recipient of the Nobel Prize for Physics (1981), wrote Nonlinear Optics in 1964, when the field of nonlinear optics was only three years old. The available literature has since grown by at least three orders of magnitude.The vitality of Nonlinear Optics is evident from the still-growing number of scientists and engineers engaged in the study of new nonlinear phenomena and in the development of new nonlinear devices in the field of opto-electronics. This monograph should be helpful in providing a historical introduction and a general background of basic ideas both for expe

Bloembergen, Nicolaas

1996-01-01T23:59:59.000Z

171

Electric power production using new GaSb photovoltaic cells with extended infrared response  

Science Journals Connector (OSTI)

New GaSb photovoltaic cells with infrared response extended out to 1.8 microns are well matched to hydrocarbon combustion heated silicon carbide infrared emitters operating at 1600 C. Power densities of up to 10 Watts/cm2 promise to make thermophotovoltaic generation of electricity economical. These continuous combustion thermophotovoltaic units run quietly and cleanly. Applications include small scale distributed cogeneration of heat and electricity and power units for clean electric vehicles.

Lewis Fraas; Russell Ballantyne; John Samaras; Michael Seal

1995-01-01T23:59:59.000Z

172

REVUE DE PHYSIQUE APPLIQUE PHASE DIAGRAM CALCULATION IN THE Te-Bi-Sb TERNARY SYSTEM  

E-Print Network (OSTI)

by the stoichio- metric compounds Bi2Te3-Sb2Te3 and SnTe-PbTe [16, 17] exhibit complete miscibility in both liquid 1976) Résumé. 2014 On calcule le diagramme de l'équilibre liquide-solide dans le système ternaire Te be achieved either by means of time- and labor-consuming measurements which permit plotting the equilibrium

Boyer, Edmond

173

Optical Expanders with Applications in Optical Computing  

E-Print Network (OSTI)

Optical Expanders with Applications in Optical Computing John H. Reif \\Lambda Akitoshi Yoshida \\Lambda July 20, 1999 Abstract We describe and investigate an optical system which we call an optical expander. An optical expander elec­ trooptically expands an optical boolean pattern encoded in d bits

Reif, John H.

174

States in Sb126 populated in the ? decay of 105-yr Sn126  

Science Journals Connector (OSTI)

The low-energy level structure of the odd-odd nucleus Sb126 has been investigated by studying the radioactive decay of 105-yr Sn126, using Ge(Li) and Si(Li) detectors. Based on conversion-electron and ?-ray singles data, ?-? and ?-e- prompt and delayed coincidence measurements, and complementary ?-ray energy and intensity balance arguments, a decay scheme for Sn126 has been deduced which accommodates all of the observed ?-ray transitions. The energies (keV), spins, and parities of the levels established in Sb126 are as follows: 0.0 [8-], 17.7 [5+], 40.4 [3-], 83.1 [4-, (3-)], 104.7 [3+], and 128.0 [2+]. The respective half-lives of these six states are: 12.4 day, 19.0 min, ?11 s, 5.1 ns, 553 ns, and 78.0 ns, the latter four values having been determined in the present investigation. The level assignments are discussed within the framework of the single-particle shell model and in relation to the proposed assignments of low-lying energy levels of neighboring odd-odd antimony isotopes.RADIOACTIVITY Sn126 [from U235(n,f)]; measured E?, I?, Ice, ?-?, ?-?, and e-? coin, level T12's; deduced ICC, ? multipolarities, Sb126 levels, J, ?; calculated ?-hindrance factors. Ge(Li), Si(Li) detectors; mass-separated source.

H. A. Smith; Jr.; M. E. Bunker; J. W. Starner; C. J. Orth; K. E. G. Löbner

1976-01-01T23:59:59.000Z

175

RHEOLOGICAL AND ELEMENTAL ANALYSES OF SIMULANT SB5 SLURRY MIX EVAPORATOR-MELTER FEED TANK SLURRIES  

SciTech Connect

The Defense Waste Processing Facility (DWPF) will complete Sludge Batch 5 (SB5) processing in fiscal year 2010. DWPF has experienced multiple feed stoppages for the SB5 Melter Feed Tank (MFT) due to clogs. Melter throughput is decreased not only due to the feed stoppage, but also because dilution of the feed by addition of prime water (about 60 gallons), which is required to restart the MFT pump. SB5 conditions are different from previous batches in one respect: pH of the Slurry Mix Evaporator (SME) product (9 for SB5 vs. 7 for SB4). Since a higher pH could cause gel formation, due in part to greater leaching from the glass frit into the supernate, SRNL studies were undertaken to check this hypothesis. The clogging issue is addressed by this simulant work, requested via a technical task request from DWPF. The experiments were conducted at Aiken County Technology Laboratory (ACTL) wherein a non-radioactive simulant consisting of SB5 Sludge Receipt and Adjustment Tank (SRAT) product simulant and frit was subjected to a 30 hour SME cycle at two different pH levels, 7.5 and 10; the boiling was completed over a period of six days. Rheology and supernate elemental composition measurements were conducted. The caustic run exhibited foaming once, after 30 minutes of boiling. It was expected that caustic boiling would exhibit a greater leaching rate, which could cause formation of sodium aluminosilicate and would allow gel formation to increase the thickness of the simulant. Xray Diffraction (XRD) measurements of the simulant did not detect crystalline sodium aluminosilicate, a possible gel formation species. Instead, it was observed that caustic conditions, but not necessarily boiling time, induced greater thickness, but lowered the leach rate. Leaching consists of the formation of metal hydroxides from the oxides, formation of boric acid from the boron oxide, and dissolution of SiO{sub 2}, the major frit component. It is likely that the observed precipitation of Mg(OH){sub 2} and Mn(OH){sub 2} caused the increase in yield stress. The low pH run exhibited as much as an order of magnitude greater B and Li (frit components) leachate concentrations in the supernate. At high pH a decrease of B leaching was found and this was attributed to adsorption onto Mg(OH){sub 2}. A second leaching experiment was performed without any sludge to deconvolute the leach rate behavior of Frit 418 from those of the SB5 sludge-Frit 418 system. At high pH, the sludgeless system demonstrated very fast leaching of all the frit components, primarily due to fast dissolution of the main component, silica, by hydroxide anion; various semiconductor studies have established this reactivity. Overall, the frit-water system exhibited greater leaching from a factor two to almost three orders of magnitude (varying by conditions and species). The slower leaching of the sludge system is possibly due to a greater ionic strength or smaller driving force. Another possible reason is a physical effect, coating of the frit particles with sludge; this would increase the mass transfer resistance to leaching. Based on this study, the cause of clogs in the melter feed loop is still unknown. A possible explanation is that the SME product, like the simulant, is too thin and could contribute to a loss of two-phase flow which could cause plugging of a restricted and poorly mixed zone like the melter feed loop. This is feasible since a previous study of a slurry showed an increase in resistance to flow at lower flow rates. Testing with a radioactive SME sample is underway and should help understand this potential mechanism.

Fernandez, A.

2010-02-08T23:59:59.000Z

176

Switching of localized surface plasmon resonance of gold nanoparticles on a GeSbTe film mediated by nanoscale phase change and modification of surface morphology  

SciTech Connect

As a platform for active nanophotonics, localized surface plasmon resonance (LSPR) switching via interaction with a chalcogenide phase change material (GeSbTe) was investigated. We performed single-particle spectroscopy of gold nanoparticles placed on a GeSbTe thin film. By irradiation with a femtosecond pulsed laser for amorphization and a continuous wave laser for crystallization, significant switching behavior of the LSPR band due to the interaction of GeSbTe was observed. The switching mechanism was explained in terms of both a change in the refractive index and a modification of surface morphology accompanying volume expansion and reduction of GeSbTe.

Hira, T.; Homma, T.; Uchiyama, T.; Kuwamura, K.; Saiki, T. [Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama, Kanagawa 223-8522 (Japan)] [Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama, Kanagawa 223-8522 (Japan)

2013-12-09T23:59:59.000Z

177

Effect of nanostructuring on the band structure and the galvanomagnetic properties in Bi{sub 1?x}Sb{sub x} alloys  

SciTech Connect

Magnetotransport measurements were performed on a series of nanostructured Bi{sub 1?x}Sb{sub x} alloy samples with an Sb content in the range between 0% and 60%. The samples were prepared by cold pressing and annealing of crystalline Bi{sub 1?x}Sb{sub x} nanoparticles, which were synthesized by mechanical alloying. The incorporation of Sb changes the band structure of these nanotextured alloys as well as their transport behavior. With increasing Sb content the band gap increases and reaches a maximum band gap of 42?meV at an Sb concentration of about 14% determined from temperature dependent resistivity measurements. For even higher Sb content, the band gap decreases again. The bands and thus the band gaps are shifted with respect to bulk material due to quantum confinement effects in the nanostructures. The change of the band structure with varying Sb content strongly affects the magnetoresistance behavior as well as the magnetic field dependence of the Hall-coefficient. Using a three band model in order to describe both properties, it was possible to determine the main band parameters of the nanostructured material as a function of the Sb content.

Will, C. H.; Elm, M. T., E-mail: matthias.elm@exp1.physik.uni-giessen.de; Klar, P. J. [Institute of Experimental Physics I, Justus-Liebig University, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany); Landschreiber, B.; Güne?, E.; Schlecht, S. [Institute of Inorganic and Analytical Chemistry, Justus-Liebig University, Heinrich-Buff-Ring 58, D-35392 Giessen (Germany)

2013-11-21T23:59:59.000Z

178

Optical memory  

DOE Patents (OSTI)

Optical memory comprising: a semiconductor wire, a first electrode, a second electrode, a light source, a means for producing a first voltage at the first electrode, a means for producing a second voltage at the second electrode, and a means for determining the presence of an electrical voltage across the first electrode and the second electrode exceeding a predefined voltage. The first voltage, preferably less than 0 volts, different from said second voltage. The semiconductor wire is optically transparent and has a bandgap less than the energy produced by the light source. The light source is optically connected to the semiconductor wire. The first electrode and the second electrode are electrically insulated from each other and said semiconductor wire.

Mao, Samuel S; Zhang, Yanfeng

2013-07-02T23:59:59.000Z

179

Sb lattice diffusion in Si1-xGex/Si(001) heterostructures:?Chemical and stress effects  

Science Journals Connector (OSTI)

The Sb diffusion coefficient in Si1-xGex/Si1-yGey(001) heterostructures grown by molecular beam epitaxy (MBE) was measured for temperatures ranging from 700 to 850 °C, Ge composition from 0 to 20 % and biaxial pressure from -0.8 (tension) to 1.4 GPa (compression). A quantitative separation of composition and biaxial stress effects is made. We show that the Sb lattice diffusion coefficient: (i) increases with Ge concentration in relaxed layers or at constant biaxial pressure and (ii) increases with compressive biaxial stress and decreases with tensile biaxial stress at constant Ge composition. The enhancement of Sb lattice diffusion in Si1-xGex layers in epitaxy on Si(001) is thus due to the cooperative effect of Ge composition and induced compressive biaxial stress. However, the first effect (composition) is predominant. The activation volume of Sb diffusion in Si1-xGex layers is deduced from the variation of the Sb diffusion coefficients with biaxial pressure. This volume is negative. The sign of the activation volume, its absolute value and its variation with temperature confirm the prediction of the thermodynamic model proposed by Aziz, namely, that under a biaxial stress the activation volume is reduced to the relaxation volume.

A. Portavoce; P. Gas; I. Berbezier; A. Ronda; J. S. Christensen; A. Yu. Kuznetsov; B. G. Svensson

2004-04-15T23:59:59.000Z

180

Phase change behaviors of Zn-doped Ge{sub 2}Sb{sub 2}Te{sub 5} films  

SciTech Connect

Zn-doped Ge{sub 2}Sb{sub 2}Te{sub 5} phase-change materials have been investigated for phase change memory applications. Zn{sub 15.16}(Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 84.84} phase change film exhibits a higher crystallization temperature ({approx}258 Degree-Sign C), wider band gap ({approx}0.78 eV), better data retention of 10 years at 167.5 Degree-Sign C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge{sub 2}Sb{sub 2}Te{sub 5}. The proper Zn atom added into Ge{sub 2}Sb{sub 2}Te{sub 5} serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.

Wang Guoxiang; Nie Qiuhua [Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Shen Xiang; Fu Jing; Xu Tiefeng; Dai Shixun [Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Wang, R. P. [Laser Physics Centre, Australian National University, Canberra, ACT 0200 (Australia); Wu Liangcai [Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2012-07-30T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Magnetic susceptibility of curium pnictides. [/sup 248/CmP, /sup 248/CmSb  

SciTech Connect

The magnetic susceptibility of microgram quantities of /sup 248/CmP and /sup 248/CmSb has been determined with the use of a SQUID micromagnetic susceptometer over the temperature range 4.2 to 340 K and in the applied magnetic field range of 0.45 to 1600 G. The fcc (NaCl-type) samples yield magnetic transitions at 73K and 162 K for the phosphide and antimonide, respectively. Together with published magnetic data for CmN and CmAs, these results indicate spatially extended exchange interactions between the relatively localized 5f electrons of the metallic actinide atoms.

Nave, S.E.; Huray, P.G.; Peterson, J.R.; Damien, D.A.; Haire, R.G.

1981-09-01T23:59:59.000Z

182

Formation and optical characteristics of strain-relieved and densely stacked GaSb/GaAs quantum dots  

E-Print Network (OSTI)

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico beneficial for QD sensors, emitters, and solar cells. © 2006 American Institute of Physics. DOI: 10 array, local- ized to the heterointerface, relieves strain energy due to lat- tice mismatch and has been

Jalali. Bahram

183

Depth-dependent magnetism in epitaxial MnSb thin films: effects of surface passivation and cleaning  

SciTech Connect

Depth-dependent magnetism in MnSb(0001) epitaxial films has been studied by combining experimental methods with different surface specificities: polarized neutron reflectivity, x-ray magnetic circular dichroism (XMCD), x-ray resonant magnetic scattering and spin-polarized low energy electron microscopy (SPLEEM). A native oxide {approx}4.5 nm thick covers air-exposed samples which increases the film's coercivity. HCl etching efficiently removes this oxide and in situ surface treatment of etched samples enables surface magnetic contrast to be observed in SPLEEM. A thin Sb capping layer prevents oxidation and preserves ferromagnetism throughout the MnSb film. The interpretation of Mn L{sub 3,2} edge XMCD data is discussed.

Aldous J. D.; Sanchez-Hanke C.; Burrows, C.W.; Maskery, I.; Brewer, M.S.; Hase, T.P.A.; Duffy, J.A.; Lees, M. Rs; Decoster, T.; Theis, W.; Quesada, A.; Schmid, A.K.; Bell, G.R.

2012-03-15T23:59:59.000Z

184

Optics and Diagnostics  

NLE Websites -- All DOE Office Websites (Extended Search)

2 14 | Next | Last Back to Index Optics Line up of optics after cleaning. Photo Number: 2013-048779...

185

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional theory study  

E-Print Network (OSTI)

Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional profiles in CdTe of native, Te adatom and vacancy, and anionic non-native interstitial adatoms P, Sb, O, S B.V. All rights reserved. 1. Introduction Cadmium telluride (CdTe) based thin films have emerged

Khare, Sanjay V.

186

Effect of Pressure and Chemical Substitutions on the Charge-Density-Wave in LaAgSb2  

SciTech Connect

We present data on the crystal structure and evolution of the electrical resistivity in lightly doped La{sub 1-x}R{sub x}AgSb{sub 2} (R=Gd, Y, Ce, and Nd) at ambient pressure and in LaAgSb{sub 2} under hydrostatic pressure. The upper charge density wave transition is suppressed by both doping and pressure with substitution-related disorder being the dominant mechanism for this suppression in the former case and the anisotropic pressure dependence of the unit cell dimensions (as seen in the c/a ratio) prevailing in the latter case.

Budko,S.; Weiner, T.; Ribeiro, R.; Canfield, P.; Lee, Y.; Vogt, T.; Lacerda

2006-01-01T23:59:59.000Z

187

The Band Spectra of SbF and BiF  

Science Journals Connector (OSTI)

New band spectra attributed to the molecules SbF and BiF have been excited by active nitrogen. The spectrum of SbF from 2000-5500A is found to have three groups of bands lying in the regions 3600-5200A, 2600-2700A and 2200-2430A. Analysis of the first group shows that sixty-one bands out of sixty-nine can be placed into two systems with the following vibrational constants, in cm-1:— System?e?e?xe??e??e??xe???e??A121887.5411.31.71616.92.89A223992.5420.01.75612.62.58 The second group consists of a few isolated bands degraded to shorter wave-lengths and the third of bands in closely spaced sequences and also degraded to shorter wave-lengths. A preliminary analysis indicates that the bands in the latter group can be placed into two systems for which ?e??700 cm-1, ?e???620 cm-1 and ??21?1850 cm-1. Three new systems of bands, degraded to shorter wave-lengths and forming a triplet system with wide multiplet separations, (7330 cm-1 and 4800 cm-1), are found in the spectrum of BiF at 3050-3250A, 2650-2850A and 2250-2350A. Photographs taken with small dispersion indicate that ?e??620 cm-1 and ?e???520 cm-1.

George D. Rochester

1937-03-15T23:59:59.000Z

188

Synthesis and structural characterization of new dithiocarbamate complexes from Sb(III) and Bi(III)  

SciTech Connect

Twenty new antimony and bismuth dithiocarbamate complexes which employed ten different type of amines have been successfully synthesized. The synthesized complexes with metal to dithiocarbamate ratio at 1:3. Elemental analysis of the complexes gave the general formula of MCl[S{sub 2}CNR’R”]{sub 2} where M = Sb(III), Bi(III); R’ = methyl, ethyl, propyl, isopropyl, butyl, sec-butyl, benzyl; R” = ethanol, methyl, ethyl, propyl, isopropyl, cyclohexyl, benzyl. The complexes were analysed by IR and NMR spectroscopy. The crystal structure of five-coordinated antimony (III) complex have been determined by X-ray single crystal diffraction. Single crystal X-ray diffraction studies on SbCl[S{sub 2}CN(C{sub 4}H{sub 9})(C{sub 2}H{sub 5})]{sub 2} adopted a triclinic system with a space group P1 with a = 10.0141(8) Å, b = 10.1394(7) Å, c = 11.8665(9) Å, ? = 67.960°, ? =87.616°, ? = 80.172°.

Jamaluddin, Nur Amirah; Baba, Ibrahim [School of Chemical Sciences and Food Technology, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia)

2013-11-27T23:59:59.000Z

189

RELAP5 assessment using LSTF test data SB-CL-18  

SciTech Connect

A 5 % cold leg break test, run SB-CL-18, conducted at the Large Scale Test Facility (LSTF) was analyzed using the RELAP5/MOD2 Cycle 36.04 and the RELAP5/MOD3 Version 5m5 codes. The test SB-CL-18 was conducted with the main objective being the investigation of the thermal-hydraulic mechanisms responsible for the early core uncovery, including the manometric effect due to an asymmetric coolant holdup in the steam generator upflow and downflow side. The present analysis, carried out with the RELAP5/MOD2 and MOD3 codes, demonstrates the code`s capability to predict, with sufficient accuracy, the main phenomena occurring in the depressurization transient, both from a qualitative and quantitative point of view. Nevertheless, several differences regarding the evolution of phenomena and affecting the timing order have been pointed out in the base calculations. The sensitivity study on the break flow and the nodalization study in the components of the steam generator U-tubes and the cross-over legs were also carried out. The RELAP5/MOD3 calculation with the nodalization change resulted in good predictions of the major thermal-hydraulic phenomena and their timing order.

Lee, S.; Chung, B.D.; Kim, H.J. [Korea Inst. of Nuclear Safety, Taejon (Korea, Republic of)

1993-05-01T23:59:59.000Z

190

Parallel optical sampler  

SciTech Connect

An optical sampler includes a first and second 1.times.n optical beam splitters splitting an input optical sampling signal and an optical analog input signal into n parallel channels, respectively, a plurality of optical delay elements providing n parallel delayed input optical sampling signals, n photodiodes converting the n parallel optical analog input signals into n respective electrical output signals, and n optical modulators modulating the input optical sampling signal or the optical analog input signal by the respective electrical output signals, and providing n successive optical samples of the optical analog input signal. A plurality of output photodiodes and eADCs convert the n successive optical samples to n successive digital samples. The optical modulator may be a photodiode interconnected Mach-Zehnder Modulator. A method of sampling the optical analog input signal is disclosed.

Tauke-Pedretti, Anna; Skogen, Erik J; Vawter, Gregory A

2014-05-20T23:59:59.000Z

191

Optical Packet Switching -1 Optical Networks  

E-Print Network (OSTI)

Optical Packet Switching - 1 Optical Networks: from fiber transmission to photonic switching Optical Packet Switching Fabio Neri and Marco Mellia TLC Networks Group ­ Electronics Department e.mellia@polito.it ­ tel. 011 564 4173 #12;Optical Packet Switching - 2 · This work is licensed under the Creative Commons

Mellia, Marco

192

RAS AWARDS AND PRIZES:  

Science Journals Connector (OSTI)

......Huygens holds the record for a long-distance landing, and Prof. Zarnecki's penetrometer was the...Detection System team for the Giotto encounter with comet Halley and later with comet Grigg-Skjellerup; his instrumental developments......

RAS Awards 2014

2014-02-01T23:59:59.000Z

193

RAS ANNUAL GENERAL MEETING:  

Science Journals Connector (OSTI)

......been appointed as Scrutineers of the Ballot for Offi- cers and Council for the ensuing year. The meeting then agreed to pro- ceed to the ballot and, after an interval, approved its closure. The Narrative Report of Council for the year 1996 was presented......

Minutes of the 177th AGM: of 9 May 1997

1997-01-01T23:59:59.000Z

194

RAS ANNUAL REPORT 2002:  

Science Journals Connector (OSTI)

......12,424 7,077 Charitable expenditure Grants 39,995 39,995 30...873 97,972 Total charitable expenditure 591,909 1,287,358 45...investment 235,419 187,716 Capital expenditure and financial investment Payments......

The RAS Annual General Meeting

2002-10-01T23:59:59.000Z

195

RAS ANNUAL REPORT 2001:  

Science Journals Connector (OSTI)

......Fellows rose by 14k and Library expenditure (excluding salaries) fell...Resources expended Direct charitable expenditure: General 548,342 548,342...investment 187,716 207,531 Capital expenditure and financial investment Payments......

The RAS Annual General Meeting; Minutes of the 181st AGM

2001-10-01T23:59:59.000Z

196

RAS ANNUAL REPORT 2002:  

Science Journals Connector (OSTI)

......the closure of the ftp server over the Christmas period, as at the end of November 2001...London): Origin and evolution of the light elements G The (rescheduled) 1999 Harold...Express, the opposition of Mars, and light pollution. Peter Bond made "Mission......

The RAS Annual General Meeting

2002-10-01T23:59:59.000Z

197

Optics and Optical Engineering Program Assessment Plan Program Learning Objectives  

E-Print Network (OSTI)

Optics and Optical Engineering Program Assessment Plan Program Learning, and processes that underlie optics and optical engineering. 2. Strong understanding of the fundamental science, mathematics, and processes that underlie optics and optical

Cantlon, Jessica F.

198

Optical microphone  

DOE Patents (OSTI)

An optical microphone includes a laser and beam splitter cooperating therewith for splitting a laser beam into a reference beam and a signal beam. A reflecting sensor receives the signal beam and reflects it in a plurality of reflections through sound pressure waves. A photodetector receives both the reference beam and reflected signal beam for heterodyning thereof to produce an acoustic signal for the sound waves. The sound waves vary the local refractive index in the path of the signal beam which experiences a Doppler frequency shift directly analogous with the sound waves.

Veligdan, James T. (Manorville, NY)

2000-01-11T23:59:59.000Z

199

Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices  

E-Print Network (OSTI)

Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices G. A. Umana transport J. Appl. Phys. 112, 123715 (2012) Characteristics of built-in polarization potentials Appl. Phys. Lett. 101, 243113 (2012) Thermal stability of the deep ultraviolet emission from Al

Krishna, Sanjay

200

Conversion of Hydroperoxoantimonate Coated Graphenes to Sb2S3@Graphene for a Superior Lithium Battery Anode  

Science Journals Connector (OSTI)

Conversion of Hydroperoxoantimonate Coated Graphenes to Sb2S3@Graphene for a Superior Lithium Battery Anode ... We describe a method for conformal coating of reduced graphene oxide (rGO) by stibnite nanocrystallites. ... antimony sulfide; stibnite; reduced graphene oxide; lithium battery; sulfurization ...

Petr V. Prikhodchenko; Jenny Gun; Sergey Sladkevich; Alexey A. Mikhaylov; Ovadia Lev; Yee Yan Tay; Sudip K. Batabyal; Denis Y. W. Yu

2012-11-22T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Crystallization of Ge2Sb2Te5 nanometric phase change material clusters made by gas-phase condensation  

E-Print Network (OSTI)

Crystallization of Ge2Sb2Te5 nanometric phase change material clusters made by gas- phase=pdfcov Published by the AIP Publishing Articles you may be interested in Nanoscale nuclei in phase change materials phase change material clusters made by gas-phase condensation G. E. Ghezzi,1,2 R. Morel,3 A. Brenac,3 N

Paris-Sud XI, Université de

202

Processes Limiting the Performance of InAs/GaSb Superlattice Mid-Infrared PIN Mesa Photodiodes  

E-Print Network (OSTI)

Processes Limiting the Performance of InAs/GaSb Superlattice Mid-Infrared PIN Mesa Photodiodes J. P superlattice pin photodiodes for different temperature and mesa size regimes. We show that the performance of large mesa photodiodes at low temperature is most severely limited by a trap-assisted tunneling leakage

Flatte, Michael E.

203

Alternative route for the preparation of CoSb{sub 3} and Mg{sub 2}Si derivatives  

SciTech Connect

An alternative manufacturing route has been developed for cobalt triantimonide and magnesium disilicide derivatives. Elemental powders were mixed in stoichiometric proportions, cold pressed into cylindrical preforms and heated in oxygen-free environment to initiate the exothermic reaction. According to DTA/TG measurements and observations under high-temperature microscope, the onset of reaction occurred at a temperature not exceeding the melting point of the more volatile component, i.e. antimony in the case of CoSb{sub 3} and magnesium in the case of Mg{sub 2}Si. The reaction products were additionally heat treated to secure homogenization. Dense sinters were obtained by hot uniaxial pressing of the obtained powders in moderate temperature-and-pressure conditions. Several advantages were identified in the proposed technology: absence of liquid phases, relatively short time of the synthesis, possibility of in-situ or ex-situ doping and grain size control. - Graphical abstract: (1) Manufacturing flow sheet for CoSb{sub 3} (milling included) and Mg{sub 2}Si (no milling). (2) Micrographs of CoSb{sub 3} product. (3) Micrographs of Mg{sub 2}Si product. Highlights: Black-Right-Pointing-Pointer The combustion synthesis followed by HP was used for the manufacturing of CoSb{sub 3} or Mg{sub 2}Si. Black-Right-Pointing-Pointer The time of reaction is shorter compared with many other synthesis methods. Black-Right-Pointing-Pointer The process is scalable and practically wasteless.

Godlewska, E., E-mail: godlewsk@agh.edu.pl [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Krakow (Poland); Mars, K.; Zawadzka, K. [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Krakow (Poland)] [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Krakow (Poland)

2012-09-15T23:59:59.000Z

204

Removal of Xenon and Radon from Contaminated Atmospheres with Dioxygenyl Hexafluoroantimonate, O2SbF6  

Science Journals Connector (OSTI)

... process gas, and the excess fluorine must be removed afterwards. I have shown that radon, the heaviest noble gas, can be collected by oxidation with liquid bromine trifluoride and ... ). I report here further experiments with a dioxygenyl salt, O2SbF6, which reacts with radon and xenon at 25 C and which appears very promising as a reagent for removing ...

L. STEIN

1973-05-04T23:59:59.000Z

205

SLUDGE BATCH 7 ACCEPTANCE EVALUATION: RADIONUCLIDE CONCENTRATIONS IN TANK 51 SB7 QUALIFICATION SAMPLE PREPARED AT SRNL  

SciTech Connect

Presented in this report are radionuclide concentrations required as part of the program of qualifying Sludge Batch Seven (SB7) for processing in the Defense Waste Processing Facility (DWPF). The SB7 material is currently in Tank 51 being washed and prepared for transfer to Tank 40. The acceptance evaluation needs to be completed prior to the transfer of the material in Tank 51 to Tank 40. The sludge slurry in Tank 40 has already been qualified for DWPF and is currently being processed as SB6. The radionuclide concentrations were measured or estimated in the Tank 51 SB7 Qualification Sample prepared at Savannah River National Laboratory (SRNL). This sample was prepared from the three liter qualification sample of Tank 51 sludge slurry (HTF-51-10-125) received on September 18, 2010. The sample was delivered to SRNL where it was initially characterized in the Shielded Cells. With consultation from the Liquid Waste Organization, the qualification sample was then modified by several washes and decants, which included addition of Pu from H Canyon and sodium nitrite per the Tank Farm corrosion control program. This final slurry now has a composition expected to be similar to that of the slurry in Tank 51 after final preparations have been made for transfer of that slurry to Tank 40. Determining the radionuclide concentrations in this Tank 51 SB7 Qualification Sample is part of the work requested in Technical Task Request (TTR) No. HLW-DWPF-TTR-2010-0031. The radionuclides included in this report are needed for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria (TSR/WAC) Evaluation, and the DWPF Solid Waste Characterization Program (TTR Task I.2). Radionuclides required to meet the Waste Acceptance Product Specifications (TTR Task III.2.) will be measured at a later date after the slurry from Tank 51 has been transferred to Tank 40. Then a sample of the as-processed SB7 will be taken and transferred to SRNL for measurement of these radionuclides. The results presented in this report are those necessary for DWPF to assess if the Tank 51 SB7 sample prepared at SRNL meets the requirements for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria evaluation, and the DWPF Solid Waste Characterization Program. Concentrations are given for thirty-four radionuclides along with total alpha and beta activity. Values for total gamma and total gamma plus beta activities are also calculated.

Pareizs, J.; Hay, M.

2011-02-22T23:59:59.000Z

206

Epitaxial growth and ferrimagnetic properties of Mn film on GaSb(100)  

SciTech Connect

We report on the epitaxial stabilization and magnetic properties of Mn films on GaSb(100) using molecular beam epitaxy, a follow-up to our previous work on the growth of Mn films on GaAs(100) [Phys. Rev. B 79, 045309 (2009)]. A strong ferrimagnetic ordering was observed which was attributed to the largely expanded lattice parameter resulting from the lattice mismatch with substrate and the enhanced thermal energy with increasing growth temperature. The observed magnetic moment of 1.16{mu}{sub B}/Mn atom was several times larger than that observed in the Mn/GaAs(100) films due to the lattice constant difference of substrates. The in-plane magnetoresistance behavior demonstrated the magnetic anisotropy that might result from the slightly distorted cubic structure of {alpha}-Mn phase under low-dimensional growth.

Feng Wuwei; Dung, Dang Duc; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Choi, Jeongyong [IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of)

2010-05-15T23:59:59.000Z

207

Spectroscopy and capacitance measurements of tunneling resonances in an Sb-implanted point contact.  

SciTech Connect

We fabricated a split-gate defined point contact in a double gate enhancement mode Si-MOS device, and implanted Sb donor atoms using a self-aligned process. E-beam lithography in combination with a timed implant gives us excellent control over the placement of dopant atoms, and acts as a stepping stone to focused ion beam implantation of single donors. Our approach allows us considerable latitude in experimental design in-situ. We have identified two resonance conditions in the point contact conductance as a function of split gate voltage. Using tunneling spectroscopy, we probed their electronic structure as a function of temperature and magnetic field. We also determine the capacitive coupling between the resonant feature and several gates. Comparison between experimental values and extensive quasi-classical simulations constrain the location and energy of the resonant level. We discuss our results and how they may apply to resonant tunneling through a single donor.

Wendt, Joel Robert; Rahman, Rajib; Ten Eyck, Gregory A.; Eng, Kevin; Carroll, Malcolm S.; Young, Ralph Watson; Lilly, Michael Patrick; Stalford, Harold Lenn; Bishop, Nathaniel; Bielejec, Edward Salvador

2010-08-01T23:59:59.000Z

208

Evaluation of electron mobility in InSb quantum wells by means of percentage-impact  

SciTech Connect

In order to quantitatively analyze the contribution of each scattering factor toward the total carrier mobility, we use a new convenient figure-of-merit, named a percentage impact. The mobility limit due to a scattering factor, which is widely used to summarize a scattering analysis, has its own advantage. However, a mobility limit is not quite appropriate for the above purpose. A comprehensive understanding of the difference in contribution among many scattering factors toward the total carrier mobility can be obtained by evaluating percentage impacts of scattering factors, which can be straightforwardly calculated from their mobility limits and the total mobility. Our percentage impact analysis shows that threading dislocation is one of the dominant scattering factors for the electron transport in InSb quantum wells at room temperature.

Mishima, T. D.; Edirisooriya, M.; Santos, M. B. [Homer L. Dodge Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructure, University of Oklahoma, 440 W. Brooks St., Norman, OK 73019 (United States)

2014-05-15T23:59:59.000Z

209

System of laser pump and synchrotron radiation probe microdiffraction to investigate optical recording process  

SciTech Connect

We have developed a system of laser-pump and synchrotron radiation probe microdiffraction to investigate the phase-change process on a nanosecond time scale of Ge{sub 2}Sb{sub 2}Te{sub 5} film embedded in multi-layer structures, which corresponds to real optical recording media. The measurements were achieved by combining (i) the pump-laser system with a pulse width of 300 ps, (ii) a highly brilliant focused microbeam with wide peak-energy width ({Delta}E/E {approx} 2%) made by focusing helical undulator radiation without monochromatization, and (iii) a precise sample rotation stage to make repetitive measurements. We successfully detected a very weak time-resolved diffraction signal by using this system from 100-nm-thick Ge{sub 2}Sb{sub 2}Te{sub 5} phase-change layers. This enabled us to find the dependence of the crystal-amorphous phase change process of the Ge{sub 2}Sb{sub 2}Te{sub 5} layers on laser power.

Yasuda, Nobuhiro; Fukuyama, Yoshimitsu; Osawa, Hitoshi [Research and Utilization Division, Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); Kimura, Shigeru [Research and Utilization Division, Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan); Ito, Kiminori; Tanaka, Yoshihito [RIKEN SPring-8 Center, RIKEN, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Matsunaga, Toshiyuki; Kojima, Rie; Hisada, Kazuya; Tsuchino, Akio; Birukawa, Masahiro [R and D Division, Panasonic Corporation, 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237 (Japan); Yamada, Noboru [Department of Materials Science and Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto, Kyoto 606-8501 (Japan); Sekiguchi, Koji; Fujiie, Kazuhiko; Kawakubo, Osamu [Advanced Optical Storage Development Department, Advanced Device Technology Platform, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 (Japan); Takata, Masaki [Research and Utilization Division, Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan); RIKEN SPring-8 Center, RIKEN, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Department of Advanced Materials Science, School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561 (Japan)

2013-06-15T23:59:59.000Z

210

Optical data latch  

DOE Patents (OSTI)

An optical data latch is formed on a substrate from a pair of optical logic gates in a cross-coupled arrangement in which optical waveguides are used to couple an output of each gate to an photodetector input of the other gate. This provides an optical bi-stability which can be used to store a bit of optical information in the latch. Each optical logic gate, which can be an optical NOT gate (i.e. an optical inverter) or an optical NOR gate, includes a waveguide photodetector electrically connected in series with a waveguide electroabsorption modulator. The optical data latch can be formed on a III-V compound semiconductor substrate (e.g. an InP or GaAs substrate) from III-V compound semiconductor layers. A number of optical data latches can be cascaded to form a clocked optical data shift register.

Vawter, G. Allen (Corrales, NM)

2010-08-31T23:59:59.000Z

211

1  

NLE Websites -- All DOE Office Websites (Extended Search)

Cloud Amount of Midlatitude Continental Cloud Amount of Midlatitude Continental Clouds in Tomsk Region: Preliminary Results T.B. Zhuravleva, T.M. Rasskazchikova, and T.K. Sklyadneva Institute of Atmospheric Optics SB RAS Tomsk, Russia S.V. Smirnov Institute of Monitoring of Climatic and Ecological Systems SB RAS Tomsk, Russia The Atmospheric Radiation Measurement (ARM) Program provides concentrated measurements of surface radiative budget as well as measurements of the atmospheric constituents including clouds, aerosols, water vapor, etc. at the Southern Great Plains (SGP), the Tropical Western Pacific and the North Slope of Alaska (NSA) sites. The data obtained allow studying a wide, but not the full range of climatologically relevant possibilities, and thus additional investigations are needed to provide the

212

Optics and Diagnostics  

NLE Websites -- All DOE Office Websites (Extended Search)

1 14 | Next | Last Back to Index Optics Optics processing of Target Wedged Focus Lens into cleaningcoating frame. Photo Number: 2013-048765...

213

Optics and Diagnostics  

NLE Websites -- All DOE Office Websites (Extended Search)

3 14 | Next | Last Back to Index Optics Alignment Conducting an optics alignment after replacement of a Pockels Cell in the clean room. Photo Number: 2013-050691...

214

Optics and Diagnostics  

NLE Websites -- All DOE Office Websites (Extended Search)

9 14 | Next | Last Back to Index Optics Processing Optics for the National Ignition Facility must be manufactured to exacting standards. To ensure quality, precise measurements...

215

Optical NAND gate  

SciTech Connect

An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Skogen, Erik J. (Albuquerque, NM); Raring, James (Goleta, CA); Tauke-Pedretti, Anna (Albuquerque, NM)

2011-08-09T23:59:59.000Z

216

Ion mobility and phase transitions in heptafluorodiantimonates(III) Cs(1?x)(NH4)xSb2F7 and K0.4Rb0.6Sb2F7 according to NMR and DSC data  

Science Journals Connector (OSTI)

Abstract Ion mobility and phase transitions in heptafluorodiantimonates(III) Cs1?x(NH4)xSb2F7 (x = 0.2; 0.6) and K0.4Rb0.6Sb2F7 were studied by the 19F, 1H NMR and DSC. The character of ionic motions in fluoride and ammonium sublattices with temperature variations was investigated. Types of ion motions and temperature ranges in which they are observed were determined. It was found that the predominant form of ionic motions in high-temperature modifications is a diffusion of fluorine atoms, whereas the number of diffusing ammonium ions depends on the sample composition. The observed phase transitions in heptafluorodiantimonates(III) of cesium–ammonium and potassium–rubidium with a formation of high-temperature modifications are transitions into a superionic state (? > 10?3 S/cm above 450 K).

V.Ya. Kavun; M.M. Polyantsev; L.A. Zemnukhova; A.B. Slobodyuk; V.I. Sergienko

2014-01-01T23:59:59.000Z

217

Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films  

SciTech Connect

Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O{sub 2}/(O{sub 2} + N{sub 2})% from 0% (N{sub 2}) to 100% (O{sub 2}). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O{sub 2} ambient exhibited higher hole concentration as compared with films annealed in vacuum or N{sub 2} ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb{sup 5+} states were more preferable in comparison to Sb{sup 3+} states for acceptor-like Sb{sub Zn}-2V{sub Zn} complex formation in SZO films.

Pandey, Sushil Kumar; Kumar Pandey, Saurabh; Awasthi, Vishnu; Mukherjee, Shaibal [Hybrid Nanodevice Research Group (HNRG), Discipline of Electrical Engineering, Indian Institute of Technology, Indore 453441 (India)] [Hybrid Nanodevice Research Group (HNRG), Discipline of Electrical Engineering, Indian Institute of Technology, Indore 453441 (India); Gupta, M.; Deshpande, U. P. [University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore (India)] [University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore (India)

2013-08-12T23:59:59.000Z

218

Fiber optic connector  

DOE Patents (OSTI)

A fiber optic connector and method for connecting composite materials within which optical fibers are imbedded. The fiber optic connector includes a capillary tube for receiving optical fibers at opposing ends. The method involves inserting a first optical fiber into the capillary tube and imbedding the unit in the end of a softened composite material. The capillary tube is injected with a coupling medium which subsequently solidifies. The composite material is machined to a desired configuration. An external optical fiber is then inserted into the capillary tube after fluidizing the coupling medium, whereby the optical fibers are coupled.

Rajic, Slobodan (Knoxville, TN); Muhs, Jeffrey D. (Lenior City, TN)

1996-01-01T23:59:59.000Z

219

Optical NOR gate  

DOE Patents (OSTI)

An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Skogen, Erik J. (Albuquerque, NM); Tauke-Pedretti, Anna (Albuquerque, NM)

2011-09-06T23:59:59.000Z

220

Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy  

SciTech Connect

The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs' faceting.

Hosseini Vajargah, S.; Woo, S. Y.; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Material Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Kleiman, R. N.; Preston, J. S. [Brockhouse Institute for Material Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2012-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Electron interactions and Dirac fermions in graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices  

SciTech Connect

Graphene based superlattices have been attracted worldwide interest due to the combined properties of the graphene Dirac cone feature and all kinds of advanced functional materials. In this work, we proposed a novel series of graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices based on the density functional theory calculations. We demonstrated the stability in terms of energy and lattice dynamics for such kind of artificial materials. The analysis of the electronic structures unravels the gap opening nature at Dirac cone of the insert graphene layer. The Dirac fermions in the graphene layers are strongly affected by the electron spin orbital coupling in the Ge{sub 2}Sb{sub 2}Te{sub 5} layers. The present results show the possible application in phase-change data storage of such kind of superlattice materials, where the Ge{sub 2}Sb{sub 2}Te{sub 5} layers exhibit as the phase-change data storage media and the graphene layer works as the electrode, probe, and heat conductor.

Sa, Baisheng [College of Materials, and Collaborative Innovation Center of Chemistry for Energy Materials, Xiamen University, Xiamen 361005 (China); Sun, Zhimei, E-mail: zmsun@buaa.edu.cn [School of Materials Science and Engineering, and Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191 (China)

2014-06-21T23:59:59.000Z

222

Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress  

Science Journals Connector (OSTI)

Antimony is the most widely used n-type dopant for Si molecular-beam epitaxy (MBE). However, because of surface segregation during growth, the control of doping profiles remains difficult. The case of Si/Si1-xGex heterostructures is complicated by the existence of stresses, which may affect both the thermodynamics and kinetics of segregation. In this study, we analyze the segregation of Sb resulting from the MBE growth of Si1-xGex/Si(100) heterostructures using secondary ion mass spectrometry as a function of (i) growth temperature (200 °C<~T°<~550 °C), (ii) germanium content (0<~x<~0.2), and (iii) stresses (compressively strained and relaxed layers). We show that Sb segregation: (i) increases with temperature, (ii) increases with Ge content in biaxially compressed layers, (iii) decreases with Ge content in relaxed layers. The temperature variation indicates that Sb surface segregation during growth is kinetically controlled. The contrasting behaviors observed as a function of Ge content in stressed and relaxed layers can thus be explained by a decrease of the segregation enthalpy induced by Ge addition and an increase of near-surface diffusion in stressed layers.

A. Portavoce; I. Berbezier; P. Gas; A. Ronda

2004-04-15T23:59:59.000Z

223

Engineering study on TiSnSb-based composite negative electrode for Li-ion batteries  

Science Journals Connector (OSTI)

Abstract Micrometric TiSnSb is a promising negative electrode material for Li-ion batteries when formulated with carboxymethyl cellulose (CMC) binder and a mixture of carbon black and carbon nanofibers, and cycled in a fluoroethylene carbonate (FEC)-containing electrolyte. Here, other binder systems were evaluated, polyacrylic acid (PAAH) mixed with CMC, CMC in buffered solution at pH 3 and amylopectin. However CMC showed the better performance in terms of cycle life of the electrode. Whatever the binder, cycle life decreases with increasing the active mass loading, which is attributed to both the precipitation of liquid electrolyte degradation products and to the loss of electrical contacts within the composite electrode and with the current collector as a consequence of the active particles volume variations. Furthermore, calendaring the electrode unfortunately decreases the cycle life. The rate performance was studied as a function of the active mass loading and was shown to be determined by the electrode polarization resistance. Finally, full cells cycling tests with Li1Ni1/3Co1/3Mn1/3O2 at the positive electrode were done. 60% of the capacity is retained after 200 cycles at the surface capacity of 2.7 mAh cm?2.

H.A. Wilhelm; C. Marino; A. Darwiche; P. Soudan; M. Morcrette; L. Monconduit; B. Lestriez

2015-01-01T23:59:59.000Z

224

Theory of acousto-optic scattering in opaque media in the regime of nonlocal optics  

Science Journals Connector (OSTI)

A theory of acousto-optic scattering from solid-state plasmas, which, on the basis of the Boltzmann equation, takes into account nonlocal electronic transport effects is established. To emphasize the influence of nonlocal effects on the principles of acousto-optic scattering the treatment is limited to the case where the scattering takes place from a purely transverse bulk sound wave which does not ripple the surface. The coherent inelastic scattering from both the incident and reflected acoustic field is considered. The integro-differential equation for the anti-Stokes field is solved with the assumption that the conduction electrons are scattered specularly from the surface. It is demonstrated that the scattering from a p-polarized incident electromagnetic field besides a well-known contribution from the plasmaritonlike part of the incident field is composed of free and forced wave terms arising from the plasmonlike part of the incident field and from branch-cut contributions which are of non-plane-wave character. The scattering from a fully degenerate plasma is considered in the fully nonlocal and almost local regimes. Resonant anti-Stokes scattering is treated and a general condition for resonance in the opaque nonlocal frequency regime is given. A few numerical calculations on Al and n-InSb are presented and it is shown that first-order Brillouin scattering via the nonlocal part of the incident light field should enable one to scatter from acoustic phonons far out in the Brillouin zone. The theoretical methods used in the present work are similar to those used in studies of the anomalous skin effect and the photoemission process. These methods almost seem to have been overlooked in light scattering studies. It is shown that the present theory is in agreement with the well-known results of local theories of acousto-optic scattering in opaque media in the appropriate limit.

O. Keller

1984-04-15T23:59:59.000Z

225

SLUDGE BATCH 6 ACCEPTANCE EVALUATION: RADIONUCLIDE CONCENTRATIONS IN TANK 51 SB6 QUALIFICATION SAMPLE PREPARED AT SRNL  

SciTech Connect

Presented in this report are radionuclide concentrations required as part of the program of qualifying Sludge Batch Six (SB6) for processing in the Defense Waste Processing Facility (DWPF). The SB6 material is currently in Tank 51 being washed and prepared for transfer to Tank 40. The acceptance evaluation needs to be completed prior to the transfer of the material in Tank 51 to Tank 40. The sludge slurry in Tank 40 has already been qualified for DWPF and is currently being processed as SB5. The radionuclide concentrations were measured or estimated in the Tank 51 SB6 Qualification Sample prepared at Savannah River National Laboratory (SRNL). This sample was prepared from the three liter sample of Tank 51 sludge slurry (HTF-51-09-110) taken on October 8, 2009. The sample was delivered to SRNL where it was initially characterized in the Shielded Cells. Under the direction of the Liquid Waste Organization it was then modified by eight washes, nine decants, an addition of Pu from Canyon Tank 16.3, and an addition of NaNO{sub 2}. This final slurry now has a composition expected to be similar to that of the slurry in Tank 51 after final preparations have been made for transfer of that slurry to Tank 40. Determining the radionuclide concentrations in this Tank 51 SB6 Qualification Sample is part of the work requested in Technical Task Request (TTR) No. HLW-DWPF-TTR-2009-0014. The work with this qualification sample is covered by a Task Technical and Quality Assurance Plan and an Analytical Study Plan. The radionuclides included in this report are needed for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria (TSR/WAC) Evaluation, and the DWPF Solid Waste Characterization Program (TTR Task I.2). Radionuclides required to meet the Waste Acceptance Product Specifications (TTR Task II.2.) will be measured at a later date after the slurry from Tank 51 has been transferred to Tank 40. Then a sample of the as-processed SB6 will be taken and transferred to SRNL for measurement of these radionuclides. The results presented in this report are those necessary for DWPF to assess if the Tank 51 SB6 sample prepared at SRNL meets the requirements for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria evaluation, and the DWPF Solid Waste Characterization Program. The sample is the same as that on which the chemical composition was reported. Concentrations are given for thirty-four radionuclides along with total alpha and beta activity. Values for total gamma and total gamma plus beta activities are also calculated. Results also indicate that 99% of the Tc-99 and at least 90% of the I-129 that could have been in this sludge batch have been removed by chemical processing steps in the SRS Canyons or Tank Farm.

Bannochie, C.; Bibler, N.; Diprete, D.

2010-05-21T23:59:59.000Z

226

Latching micro optical switch  

DOE Patents (OSTI)

An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

Garcia, Ernest J; Polosky, Marc A

2013-05-21T23:59:59.000Z

227

High bandwidth optical mount  

DOE Patents (OSTI)

An optical mount, which directs a laser beam to a point by controlling the position of a light-transmitting optic, is stiffened so that a lowest resonant frequency of the mount is approximately one kilohertz. The optical mount, which is cylindrically-shaped, positions the optic by individually moving a plurality of carriages which are positioned longitudinally within a sidewall of the mount. The optical mount is stiffened by allowing each carriage, which is attached to the optic, to move only in a direction which is substantially parallel to a center axis of the optic. The carriage is limited to an axial movement by flexures or linear bearings which connect the carriage to the mount. The carriage is moved by a piezoelectric transducer. By limiting the carriage to axial movement, the optic can be kinematically clamped to a carriage.

Bender, Donald A. (Dublin, CA); Kuklo, Thomas (Oakdale, CA)

1994-01-01T23:59:59.000Z

228

Optics and Diagnostics  

NLE Websites -- All DOE Office Websites (Extended Search)

test optic after receiving chemical process called AMP2.5, which is under development for increasing the damage threshold of 3 fused silica optics. Photo Number: 2013-05031...

229

NIF Final Optics Assemblies  

NLE Websites -- All DOE Office Websites (Extended Search)

NIF Final Optics Assemblies The Final Optics Assemblies (FOAs) are the last element of the main laser system and the first of the target area systems. Each FOA contains four...

230

Optic Orientation in Stereo  

Science Journals Connector (OSTI)

The visualization and representation of optic orientation is the nittygritty of practical optical mineralogy. A complete description is concisely made with the use of a stereographic projection. Perspective dr...

Richard E. Stoiber; Stearns A. Morse

1994-01-01T23:59:59.000Z

231

Colored optical glass  

Science Journals Connector (OSTI)

The Lytkarino Optical Glass Factory manufactures various types of colored optical glasses: yellow, orange, and red glasses and glasses that are transparent in the IR region, as well as...

Mogil’naya, L G; Zinov’eva, O B; Firsova, Yu A; Gulyukin, M N

2013-01-01T23:59:59.000Z

232

''Atomic Optics'': Nonimaging Optics on the Nanoscale  

SciTech Connect

This is the final report for a one year close out extension of our basic research program that was established at the University of Chicago more than sixteen years ago to explore and develop the optical sub-discipline that has come to be known as ''nonimaging optics''. This program has been extremely fruitful, having both broadened the range of formalism available for workers in this field and led to the discovery of many new families of optical devices. These devices and techniques have applications wherever the efficient transport and transformation of light distributions are important, in particular in illumination, fiber optics, collection and concentration of sunlight, and the detection of faint light signals in physics and astrophysics. Over the past thirty years, Nonimaging Optics (Welford and Winston, 1989) has brought a fresh approach to the analysis of many problems in classical macro-scale optics. Through the application of phase-space concepts, statistical methods, thermodynamic arguments, etc., many previously established performance limits were able to be broken and many technical surprises with exciting practical applications were discovered. The most recent three-year phase of our long-term continuing program ended in late 2002 and emphasized extending our work in geometrical optics and expanding it to include some interesting questions in physical optics as well as in the new field of statistical optics. This report presents a survey of the basic history and concepts of nonimaging optics and reviews highlights and significant accomplishments over the past fifteen years. This is followed by a more detailed summary of recent research directions and accomplishments during the last three years. This most recent phase was marked by the broadening in scope to include a separate project involving a collaboration with an industrial partner, Science Applications International Corporation (SAIC). This effort was proposed and approved in 1998 and was incorporated into this project (September, 1998) with the required additional funding provided through this already existing grant.

Roland Winston Joseph O'Gallagher

2005-01-15T23:59:59.000Z

233

Optics and Diagnostics  

NLE Websites -- All DOE Office Websites (Extended Search)

10 14 | Next | Last Back to Index Optics Diffraction Gratings for APPOLON laser. Photo Number: 2011-020040...

234

Optical voltage reference  

DOE Patents (OSTI)

An optical voltage reference for providing an alternative to a battery source is described. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function. 2 figures.

Rankin, R.; Kotter, D.

1994-04-26T23:59:59.000Z

235

Thermodynamics of Optical Tweezers  

Science Journals Connector (OSTI)

We discuss the measurement of the gradient and scattering forces based on a thermodynamic treatment of optical tweezers.

Stilgoe, Alexander B; Nguyen, Lan T P; Nieminen, Timo A; Rubinsztein-Dunlop, Halina

236

Phase equilibria, formation, crystal and electronic structure of ternary compounds in Ti-Ni-Sn and Ti-Ni-Sb ternary systems  

SciTech Connect

The phase equilibria of the Ti-Ni-Sn and Ti-Ni-Sb ternary systems have been studied in the whole concentration range by means of X-ray and EPM analyses at 1073 K and 873 K, respectively. Four ternary intermetallic compounds TiNiSn (MgAgAs-type), TiNi{sub 2-x}Sn (MnCu{sub 2}Al-type), Ti{sub 2}Ni{sub 2}Sn (U{sub 2}Pt{sub 2}Sn-type), and Ti{sub 5}NiSn{sub 3} (Hf{sub 5}CuSn{sub 3}-type) are formed in Ti-Ni-Sn system at 1073 K. The TiNi{sub 2}Sn stannide is characterized by homogeneity in the range of 50-47 at% of Ni. The Ti-Ni-Sb ternary system at 873 K is characterized by formation of three ternary intermetallic compounds, Ti{sub 0.8}NiSb (MgAgAs-type), Ti{sub 5}Ni{sub 0.45}Sb{sub 2.55} (W{sub 5}Si{sub 3}-type), and Ti{sub 5}NiSb{sub 3} (Hf{sub 5}CuSn{sub 3}-type). The solubility of Ni in Ti{sub 0.8}NiSb decreases number of vacancies in Ti site up to Ti{sub 0.91}Ni{sub 1.1}Sb composition. - Graphical abstract: Isothermal section of the Ti-Ni-Sn phase diagram and DOS distribution in hypothetical TiNi{sub 1+x}Sn solid solution. Highlights: Black-Right-Pointing-Pointer Ti-Ni-Sn phase diagram was constructed at 1073 K. Black-Right-Pointing-Pointer Four ternary compounds are formed: TiNiSn, TiNi{sub 2-x}Sn, Ti{sub 2}Ni{sub 2}Sn, and Ti{sub 5}NiSn{sub 3}. Black-Right-Pointing-Pointer Three ternary compounds exist in Ti-Ni-Sb system at 873 K. Black-Right-Pointing-Pointer The TiNi{sub 2}Sb compound is absent.

Romaka, V.V., E-mail: romakav@yahoo.com [Department of Materials Engineering and Applied Physics, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Rogl, P. [Institut fur Physikalische Chemie der Universitat Wien, Wahringerstrabe 42, A-1090 Wien (Austria); Romaka, L.; Stadnyk, Yu. [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Melnychenko, N.; Grytsiv, A.; Falmbigl, M. [Institut fur Physikalische Chemie der Universitat Wien, Wahringerstrabe 42, A-1090 Wien (Austria); Skryabina, N. [Perm State University, Bukireva Str. 15, 614990 Perm (Russian Federation)

2013-01-15T23:59:59.000Z

237

Electrical resistance and magnetic properties of the neptunium monopnictides NpAs, NpSb, and NpBi at high pressures  

Science Journals Connector (OSTI)

We report on high-pressure studies performed on the neptunium pnictides NpAs and NpBi via electrical resistance up to ?25 GPa between 1.3 K and room temperature, and on a high-pressure investigation up to 9 GPa and at 4.2 K on NpSb using 237Np Mössbauer spectroscopy. This work extends previous high-pressure studies carried out on NpAs via Mössbauer spectroscopy, on NpSb via resistance, and on all pnictides via x-ray study. In NpX (X=As,Sb,Bi) crystallizing in the cubic-NaCl phase the ground state is antiferromagnetic and displays a noncollinear 3k spin structure. The strong increase of the resistivity with decreasing temperature observed in the temperature range of the 3k order at ambient pressure collapses at 0.23 (NpAs), 2.7 (NpSb), and 3.9 GPa (NpBi). No significant change of the hyperfine interactions is found in NpAs or NpSb at the pressure where the resistance collapse is observed. The Kondo anomaly of the resistivity observed at ambient pressure disappears above 25 GPa (NpAs), 2.7 GPa (NpSb), and 3 GPa (NpBi). The Néel temperature TN of all compounds and the ordered moment of NpAs and NpSb decrease with reduced volume. For NpAs and NpBi the resistance indicates the presence of magnetic order at least up to 16 GPa. The compounds undergo a pressure-induced structural transition with a volume reduction by ?10%. Although in the resistance of NpSb the signature of magnetic order is lost already at 8 GPa in the high-pressure phase, a magnetic hyperfine field is present, which is reduced by ?30% relative to the NaCl phase. It is suggested that the resistance collapse is caused by a change of the magnetic structure, that the decrease of TN is due to a modification of the Fermi surface besides a small 5f delocalization, and that in NpSb the volume reduction in the structural high-pressure phase leads to an enhanced 5f delocalization.

V. Ichas; S. Zwirner; D. Braithwaite; J. C. Spirlet; J. Rebizant; W. Potzel

1997-12-01T23:59:59.000Z

238

Optical Diagnostics Thomas Tsang  

E-Print Network (OSTI)

Optical Diagnostics Thomas Tsang · tight environment · high radiation area · non-serviceable area · passive components · optics only, no active electronics · transmit image through flexible fiber bundle #12;New imaging fiber bundle Core size: 12 µm, diameter: 1/8" Optical Diagnostics Total fiber counts ~50

McDonald, Kirk

239

REVIEW ARTICLE Optical trapping  

E-Print Network (OSTI)

REVIEW ARTICLE Optical trapping Keir C. Neuman and Steven M. Blocka) Department of Biological ago, optical traps have emerged as a powerful tool with broad-reaching applications in biology--and the measurement of nanometer-level displacements of--optically trapped objects. We review progress

Block, Steven

240

The key role of charge carriers scattering on polar optical phonons in semiconductors for thermoelectric energy conversion  

Science Journals Connector (OSTI)

Abstract The Boltzmann equation for charge carriers in n-type InSb is solved by numerical procedure. Temperature and donor atoms concentration dependences of kinetic coefficients are studied with respect to the thermoelectric energy conversion efficiency. It is found that the mechanism of the charge carriers scattering on polar optical phonons is of crucial importance for thermoelectric figure of merit of semiconductors. High thermoelectric efficiency of compounds and alloys comprising such heavy atoms as Pb or Bi is explained by weakening of the above mentioned scattering mechanism due to gigantic values of dielectric constants of substances caused by high polarizability of heavy atoms.

V.G. Orlov; G.S. Sergeev

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

University of Central Florida College of Optics & Photonics Optics  

E-Print Network (OSTI)

University of Central Florida College of Optics & Photonics Optics Spring 2010 OSE-6432: Principles of guided wave optics; electro -optics, acousto-optics and optoelectronics. Location: CREOL-A-214 or by Appointment Reference Materials: 1. Class Notes. 2. "Fundamentals of Optical Waveguides", K. Okamoto, Academic

Van Stryland, Eric

242

de Haas{endash}van Alphen and Shubnikov{endash}de Haas oscillations in RAgSb{sub 2} (R=Y, La-Nd, Sm)  

SciTech Connect

de Haas{endash}van Alphen and Shubnikov{endash}de Haas oscillations have been used to study the Fermi surface of the simple tetragonal RAgSb{sub 2} series of compounds with R=Y, La-Nd, and Sm. The high quality of the flux-grown single crystals, coupled with very small extremal cross sections of Fermi surface, allow the observation of quantum oscillations at modest fields (H{lt}30&hthinsp;kG) and high temperatures (up to 25 K in SmAgSb{sub 2}). For H{parallel}c, the effective masses, determined from the temperature dependence of the amplitudes, are quite small, typically between 0.07 and 0.5m{sub 0}. The topology of the Fermi surface was determined from the angular dependence of the frequencies for R=Y, La, and Sm. In SmAgSb{sub 2}, antiferromagnetic ordering below 8.8 K is shown to dramatically alter the Fermi surface. For LaAgSb{sub 2} and CeAgSb{sub 2}, the effect of applied hydrostatic pressure on the frequencies was also studied. Finally, the experimental data were compared to the Fermi surface calculated within the tight-binding linear muffin-tin orbital approximation. Overall, the calculated electronic structure was found to be consistent with the experimental data. {copyright} {ital 1999} {ital The American Physical Society}

Myers, K.D.; Budko, S.L.; Antropov, V.P.; Harmon, B.N.; Canfield, P.C. [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)] [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States); Lacerda, A.H. [National High Field Laboratory, Los Alamos Facility, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [National High Field Laboratory, Los Alamos Facility, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

1999-11-01T23:59:59.000Z

243

de Haas[endash]van Alphen and Shubnikov[endash]de Haas oscillations in RAgSb[sub 2] (R=Y, La-Nd, Sm)  

SciTech Connect

de Haas[endash]van Alphen and Shubnikov[endash]de Haas oscillations have been used to study the Fermi surface of the simple tetragonal RAgSb[sub 2] series of compounds with R=Y, La-Nd, and Sm. The high quality of the flux-grown single crystals, coupled with very small extremal cross sections of Fermi surface, allow the observation of quantum oscillations at modest fields (H[lt]30 hthinsp;kG) and high temperatures (up to 25 K in SmAgSb[sub 2]). For H[parallel]c, the effective masses, determined from the temperature dependence of the amplitudes, are quite small, typically between 0.07 and 0.5m[sub 0]. The topology of the Fermi surface was determined from the angular dependence of the frequencies for R=Y, La, and Sm. In SmAgSb[sub 2], antiferromagnetic ordering below 8.8 K is shown to dramatically alter the Fermi surface. For LaAgSb[sub 2] and CeAgSb[sub 2], the effect of applied hydrostatic pressure on the frequencies was also studied. Finally, the experimental data were compared to the Fermi surface calculated within the tight-binding linear muffin-tin orbital approximation. Overall, the calculated electronic structure was found to be consistent with the experimental data. [copyright] [ital 1999] [ital The American Physical Society

Myers, K.D.; Budko, S.L.; Antropov, V.P.; Harmon, B.N.; Canfield, P.C. (Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)); Lacerda, A.H. (National High Field Laboratory, Los Alamos Facility, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States))

1999-11-01T23:59:59.000Z

244

Electronic structure of Ba3CuSb2O9: A candidate quantum spin liquid compound  

Science Journals Connector (OSTI)

Using density-functional methods, we study the electronic structure of Ba3CuSb2O9, a candidate material for the quantum spin liquid behavior. We study both the triangular lattice as well as the recently proposed hexagonal lattice structures with flipped Cu-Sb dumbbells. The band structure near the Fermi energy is described very well by a tight-binding Hamiltonian involving the Cu (eg) orbitals, confirming their central role in the physics of the problem. A minimal tight-binding Hamiltonian for the triangular structure is presented. The Cu (d9) ions (a single eg hole in the band structure) present in the compound are expected to be Jahn-Teller centers, while the nature of the Jahn-Teller distortions in this material is still under debate. Solving a simple model by exact diagonalization, we show that electronic correlation effects in general enhance the tendency towards a Jahn-Teller distortion by reducing the kinetic energy due to correlation effects. Our density-functional calculations do indeed show a significant Jahn-Teller distortion of the CuO6 octahedra when we include the correlation effects within the Coulomb-corrected GGA+U method, so that the Jahn-Teller effect is correlation driven. We argue for the presence of a random static Jahn-Teller distortion in the hexagonal structure rather than a dynamical one because of the broken octahedral symmetry around the CuO6 octahedra and the potential fluctuations inherently present in the system caused by a significant disorder, which is believed to be present, in particular, due to the flipped Cu-Sb dumbbells.

K. V. Shanavas; Z. S. Popovi?; S. Satpathy

2014-02-27T23:59:59.000Z

245

Asian Forum for Accelerators and Detectors 25 -26 February, 2013, Budker INP, Novosibirsk, Russia  

E-Print Network (OSTI)

, Russia 4th Asian Forum for Accelerators and Detectors (AFAD'13) will be hosted by Budker Institute of Nuclear Physics SB RAS, Novosibirsk, Russia, from February 25 to February 26, 2013. AFAD is the new name INP SB RAS, Lavrentiev av. 11, Novosibirsk 630090 Russia Meeting Web-site: http

246

Near perfect optics  

SciTech Connect

This report discusses a novel fabrication process to produce nearly perfect optics. The process utilizes vacuum deposition techniques to optimally modify polished optical substrate surfaces. The surface figure, i.e. contour of a polished optical element, is improved by differentially filling in the low spots on the surface using flux from a physical vapor deposition source through an appropriate mask. The process is expected to enable the manufacture of diffraction-limited optical systems for the UV, extreme UV, and soft X-ray spectral regions, which would have great impact on photolithography and astronomy. This same technique may also reduce the fabrication cost of visible region optics with aspheric surfaces.

Goeke, R.; Farnsworth, A.V.; Neumann, C.C.; Sweatt, W.C.; Warren, M.E.; Weed, J.W.

1996-06-01T23:59:59.000Z

247

Modular Optical PDV System  

SciTech Connect

A modular optical photon Doppler velocimetry (PDV) detector system has been developed by using readily available optical components with a 20-GHz Miteq optical detector into eight channels of single-wide modules integrated into a 3U rack unit (1U = 1.75 inches) with a common power supply. Optical fibers were precisely trimmed, welded, and timed within each unit. This system has been used to collect dynamic velocity data on various physics experiments. An optical power meter displays the laser input power to the module and optical power at the detector. An adjustable micro-electromechanical system (MEMS) optical attenuator is used to adjust the amount of unshifted light entering the detector. Front panel LEDs show the presence of power to the module. A fully loaded chassis with eight channels consumes 45 watts of power. Each chassis requires 1U spacing above and below for heat management. Modules can be easily replaced.

Araceli Rutkowski, David Esquibel

2008-12-11T23:59:59.000Z

248

Fiber optic vibration sensor  

DOE Patents (OSTI)

A fiber optic vibration sensor utilizes two single mode optical fibers supported by a housing with one optical fiber fixedly secured to the housing and providing a reference signal and the other optical fiber having a free span length subject to vibrational displacement thereof with respect to the housing and the first optical fiber for providing a signal indicative of a measurement of any perturbation of the sensor. Damping or tailoring of the sensor to be responsive to selected levels of perturbation is provided by altering the diameter of optical fibers or by immersing at least a portion of the free span length of the vibration sensing optical fiber into a liquid of a selected viscosity.

Dooley, Joseph B. (Harriman, TN); Muhs, Jeffrey D. (Lenoir City, TN); Tobin, Kenneth W. (Harriman, TN)

1995-01-01T23:59:59.000Z

249

Fiber optic vibration sensor  

DOE Patents (OSTI)

A fiber optic vibration sensor utilizes two single mode optical fibers supported by a housing with one optical fiber fixedly secured to the housing and providing a reference signal and the other optical fiber having a free span length subject to vibrational displacement thereof with respect to the housing and the first optical fiber for providing a signal indicative of a measurement of any perturbation of the sensor. Damping or tailoring of the sensor to be responsive to selected levels of perturbation is provided by altering the diameter of optical fibers or by immersing at least a portion of the free span length of the vibration sensing optical fiber into a liquid of a selected viscosity. 2 figures.

Dooley, J.B.; Muhs, J.D.; Tobin, K.W.

1995-01-10T23:59:59.000Z

250

Fabrication and electrical properties of La8.33Sb(SiO4)6O2 thick films for solid oxide fuel cells  

Science Journals Connector (OSTI)

In this study Sb-substituted La8.33Sb(SiO4)6O2 apatite thick films were fabricated by using a screen printing method and the structural and electrical properties of these materials with variation in sintering temperature for solid oxide fuel cells were investigated. With increased sintering temperatures the second phase La2SiO5 phase decreased and the specimens sintered at over 1350?°C showed typical X-ray diffraction patterns of apatite polycrystalline structure. The grain size increased and porosity decreased with increasing sintering temperatures. The thickness of all films was approximately 25–30??m. La8.33Sb(SiO4)6O2 thick films sintered at 1350?°C showed good conductivity and activation energy characteristics at 9.87?×?10?5 S cm?1and 1.24?eV respectively.

Dae-Young Kim; Sung-Gap Lee

2013-01-01T23:59:59.000Z

251

Demonstrating 1 nm-oxide-equivalent-thickness HfO{sub 2}/InSb structure with unpinning Fermi level and low gate leakage current density  

SciTech Connect

In this work, the band alignment, interface, and electrical characteristics of HfO{sub 2}/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO{sub 2} layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO{sub 2}/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10{sup ?4} A/cm{sup ?2}. The D{sub it} value of smaller than 10{sup 12} eV{sup ?1}cm{sup ?2} has been obtained using conduction method.

Trinh, Hai-Dang [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Lin, Yueh-Chin; Nguyen, Hong-Quan; Luc, Quang-Ho [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Nguyen, Minh-Thuy; Duong, Quoc-Van; Nguyen, Manh-Nghia [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam)] [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Wang, Shin-Yuan [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)] [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China); Yi Chang, Edward [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)

2013-09-30T23:59:59.000Z

252

Optimization of InAsSb/InGaAs strained-layer superlattice growth by metal-organic chemical vapor deposition for use in infrared emitters  

SciTech Connect

We have prepared InAsSb/InGaAs strained-layer superlattices (SLSs) by metal-organic chemical vapor deposition using a variety of growth conditions. Presence of an InGaAsSb interface layer was indicated by x-ray diffraction. This interface effect was minimized by optimizing the purge times, reactant flows, and growth conditions. The optimized growth conditions involved the use of low pressure, short purge times between the growth of the layers, and no reactant flow during the purges. Electron diffraction indicates that CuPt-type compositional ordering occurs in InAs{sub 1{minus}x}Sb{sub x} alloys and SLSs which explains an observed bandgap reduction from previously accepted alloy values.

Biefeld, R.M.; Baucom, K.C.; Follstaedt, D.M.; Kurtz, S.R.

1994-08-01T23:59:59.000Z

253

Anisotropic magnetization and transport properties of RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm)  

SciTech Connect

This study of the RAgSb{sub 2} series of compounds arose as part of an investigation of rare earth intermetallic compounds containing antimony with the rare earth in a position with tetragonal point symmetry. Materials with the rare earth in a position with tetragonal point symmetry frequently manifest strong anisotropies and rich complexity in the magnetic properties, and yet are simple enough to analyze. Antimony containing intermetallic compounds commonly possess low carrier densities and have only recently been the subject of study. Large single grain crystals were grown of the RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm) series of compounds out of a high temperature solution. This method of crystal growth, commonly known as flux growth is a versatile method which takes advantage of the decreasing solubility of the target compound with decreasing temperature. Overall, the results of the crystal growth were impressive with the synthesis of single crystals of LaAgSb{sub 2} approaching one gram. However, the sample yield diminishes as the rare earth elements become smaller and heavier. Consequently, no crystals could be grown with R=Yb or Lu. Furthermore, EuAgSb{sub 2} could not be synthesized, likely due to the divalency of the Eu ion. For most of the RAgSb{sub 2} compounds, strong magnetic anisotropies are created by the crystal electric field splitting of the Hund's rule ground state. This splitting confines the local moments to lie in the basal plane (easy plane) for the majority of the members of the series. Exceptions to this include ErAgSb{sub 2} and TmAgSb{sub 2}, which have moments along the c-axis (easy axis) and CeAgSb{sub 2}, which at intermediate temperatures has an easy plane, but exchange coupling at low temperatures is anisotropic with an easy axis. Additional anisotropy is also observed within the basal plane of DyAgSb{sub 2}, where the moments are restricted to align along one of the {l_angle}110{r_angle} axes. Most of the RAgSb{sub 2} compounds containing magnetic rare earths, antiferromagnetically ordered at low temperatures. The ordering temperatures of these compounds are approximately proportional to the de Gennes factor, which suggests that the RKKY interaction is the dominant exchange interaction between local moments. Although metamagnetic transitions were observed in many members of the series, the series of sharp step-like transitions in DyAgSb{sub 2} are impressive. In this compound, up to 11 different magnetic states are stable depending on the magnitude and direction of the applied field. The saturated magnetization of these states and the critical fields needed to induce a phase transition vary with the direction of the applied field. Through detailed study of the angular dependence of the magnetization and critical fields, the net distribution of magnetic moments was determined for most, of the metamagnetic states. In DyAgSb{sub 2}, the crystal electric field (CEF) splitting of the Hund's rule ground state creates a strong anisotropy where the local Dy{sup 3+} magnetic moments are constrained to one of the equivalent {l_angle}110{r_angle} directions within the basal plane. The four position clock model was introduced to account for this rich metamagnetic system. Within this model, the magnetic moments are constrained to one of four equivalent orientations within the basal plane and interactions are calculated for up third nearest neighbors. The theoretical phase diagram, generated from the coupling constants is in excellent agreement with the experimental phase diagram. Further investigation of this compound using magnetic X-ray or neutron diffraction would be extremely useful to verify the net distributions of moments and determine the wave vectors of each of the ordered states.

Myers, Kenneth D.

1999-11-08T23:59:59.000Z

254

?-function-shaped Sb-doping profiles in Si(001) obtained using a low-energy accelerated-ion source during molecular-beam epitaxy  

Science Journals Connector (OSTI)

Two-dimensional (2D) buried ?-function-shaped Sb-doping profiles have been obtained in Si using a low-energy accelerated Sb-ion source during molecular-beam epitaxy. A combination of secondary-ion mass spectrometry (SIMS), capacitance-voltage (C-V) measurements, and cross-sectional transmission electron microscopy (XTEM) was used to investigate dopant distributions and to determine profile widths. The 2D-sheet Sb-doping concentration NSb, obtained by integrating SIMS ?-doping profiles in samples grown with substrate temperature Ts=620 °C and Sb-ion acceleration potentials VSb=200 and 300 V, was found to vary linearly with the product of the Sb-ion flux and the exposure time (i.e., the ion dose) over the NSb range from 5×1012 to 2×1014 cm-2. The full width at half maximum (FWHM) concentration of ?-doping profiles in Si(001) films was less than the depth resolution of both SIMS and C-V measurements (?10 and 3 nm, respectively). High-resolution XTEM lattice images show that the FWHM was ?2 nm. This is consistent with dopant incorporation simulations, based upon a multisite transition-state dopant incorporation model, which show that accelerated-beam dopant species are trapped in near-surface substitutional sites with atomic mobilities between those of surface and bulk atoms. Dopant surface segregation during growth is strongly suppressed, and the dopant distribution is determined primarily by the straggle in ion trapping distributions. The present results are compared with profile broadening observed in ?-doped layers obtained by solid-phase epitaxy of amorphous Si containing a buried Sb layer.

W.-X. Ni; G. V. Hansson; J.-E. Sundgren; L. Hultman; L. R. Wallenberg; J.-Y. Yao; L. C. Markert; J. E. Greene

1992-09-15T23:59:59.000Z

255

Nanoscale -structural domains in the phonon-glass thermoelectric material -Zn4Sb3 H. J. Kim,1 E. S. Bozin,1 S. M. Haile,2 G. J. Snyder,2 and S. J. L. Billinge1,  

E-Print Network (OSTI)

Nanoscale -structural domains in the phonon-glass thermoelectric material -Zn4Sb3 H. J. Kim,1 E. S April 2007 A study of the local atomic structure of the promising thermoelectric material -Zn4Sb3, using Thermoelectric materials allow for direct conversion of heat into electrical energy and vice versa. They hold

256

Synthesis, structure and magnetic properties of La{sub 3}Co{sub 2}SbO{sub 9}: A double perovskite with competing antiferromagnetic and ferromagnetic interactions  

SciTech Connect

The synthesis, structural characterization, and magnetic properties of La{sub 3}Co{sub 2}SbO{sub 9} double perovskite are reported. The crystal structure has been refined by X-ray and neutron powder diffraction data in the monoclinic space group P2{sub 1}/n. Co{sup 2+} and Sb{sup 5+} have the maximum order allowed for the La{sub 3}Co{sub 2}SbO{sub 9} stoichiometry. Rietveld refinements of powder neutron diffraction data show that at room temperature the cell parameters are a=5.6274(2) A, b=5.6842(2) A, c=7.9748(2) A and {beta}=89.999(3) Degree-Sign . Magnetization measurements indicate the presence of ferromagnetic correlations with T{sub C}=55 K attributed to the exchange interactions for non-linear Co{sup 2+}-O-Sb{sup 5+}-O-Co{sup 2+} paths. The effective magnetic moment obtained experimentally is {mu}{sub exp}=4.38 {mu}{sub B} (per mol Co{sup 2+}), between the theoretical one for spin only (3.87 {mu}{sub B}) and spin-orbit value (6.63 {mu}{sub B}), indicating partially unquenched contribution. The low magnetization value at high magnetic field and low temperature (1 {mu}{sub B}/f.u., 5 T and 5 K) and the difference between ZFC and FC magnetization curves (at 5 kOe) indicate that the ferromagnetism do not reach a long range order and that the material has an important magnetic frustration. - Graphical abstract: Co-O-Co (Yellow octahedra only) rich zones (antiferromagnetic) are in contact with Co-O-Sb-O-Co (Red and yellow octahedra) rich zones (Ferromagnetic) to give the peculiar magnetic properties, as a consequence, a complex hysteresis loop can be observed composed by a main and irreversible curve in all the measured range, superimposed with a ferromagnetic component at low fields. Highlights: Black-Right-Pointing-Pointer La{sub 3}Co{sub 2}SbO{sub 9} has small Goldschmidt Tolerance Factor (t) due to the small size of La{sup 3+}. Black-Right-Pointing-Pointer Small t determines an angle for the path Co{sup 2+}-O-Sb{sup 5+}-O-Co{sup 2+} of 153 Degree-Sign . Black-Right-Pointing-Pointer Ferromagnetism is attributed to exchange interactions for Co{sup 2+}-O-Sb{sup 5+}-O-Co{sup 2+} paths. Black-Right-Pointing-Pointer Ferromagnetic nanoclusters are embedded in an antiferromagnetic matrix.

Franco, D.G.; Fuertes, V.C.; Blanco, M.C. [INFIQC (CONICET), Departamento de Fisicoquimica, Facultad de Ciencias Quimicas, Universidad Nacional de Cordoba, Ciudad Universitaria, X5000HUA Cordoba (Argentina)] [INFIQC (CONICET), Departamento de Fisicoquimica, Facultad de Ciencias Quimicas, Universidad Nacional de Cordoba, Ciudad Universitaria, X5000HUA Cordoba (Argentina); Fernandez-Diaz, M.T. [Institute Laue-Langevin (ILL) 156X, F-38042 Grenoble Cedex 9 (France)] [Institute Laue-Langevin (ILL) 156X, F-38042 Grenoble Cedex 9 (France); Sanchez, R.D., E-mail: rodo@cab.cnea.gov.ar [Centro Atomico Bariloche, CNEA and Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 Rio Negro (Argentina); Carbonio, R.E., E-mail: carbonio@fcq.unc.edu.ar [INFIQC (CONICET), Departamento de Fisicoquimica, Facultad de Ciencias Quimicas, Universidad Nacional de Cordoba, Ciudad Universitaria, X5000HUA Cordoba (Argentina)

2012-10-15T23:59:59.000Z

257

Superlattice-like Ge8Sb92/Ge thin films for high speed and low power consumption phase change memory application  

Science Journals Connector (OSTI)

The amorphous-to-crystalline transitions of superlattice-like Ge8Sb92/Ge thin films were investigated through in situ film resistance measurement. X-ray reflectivity was used to measure the density change before and after phase change. The superlattice-like structure of the thin films was confirmed by using transmission electron microscopy. A picosecond laser pump–probe system was used to study the phase change speed. Phase change memory cells based on the SLL [Ge8Sb92(4 nm)/Ge(3 nm)]7 thin films were fabricated to test and verify the switching speed and operation consumption.

Yifeng Hu; Xiaoyi Feng; Jiwei Zhai; Ting Wen; Tianshu Lai; Sannian Song; Zhitang Song

2014-01-01T23:59:59.000Z

258

Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 × 2)-O  

Science Journals Connector (OSTI)

The exothermic nature of oxidation causes nearly all semiconductor applications in various fields like electronics, medicine, photonics, and sensor technology to acquire an oxidized semiconductor surface part during the application manufacturing. The significance of understanding and controlling the atomic scale properties of oxidized semiconductor surfaces is expected to increase even further with the development of nanoscale semiconductor crystals. The nature of oxidized semiconductor layers is, however, hard to predict and characterize as they are usually buried and amorphous. To shed light on these issues, we pursue a different approach based on oxidized III-V semiconductor layers that are crystalline. We present a comprehensive characterization of oxidized crystalline InSb(100)(1×2)-O layers by ab initio calculations, photoelectron spectroscopy, scanning tunneling microscopy, and spectroscopy, and demonstrate the electronic band structures of different oxidized phases of the semiconductor, which elucidate the previous contradictory semiconductor-oxidation effects. At 0.5 monolayer (ML) oxidation, oxygen atoms tend to occupy subsurface Sb sites, leading to metallic states in the semiconductor band gap, which arise from top dimers. When the oxidation is increased to the 1.0–2.0 ML concentration, oxygen occupies also interstitial sites, and the insulating band structure without gap states is stabilized with unusual occupied In dangling bonds. In contrast, the 2.5–3.0 ML oxide phases undergo significant changes toward a less ordered structure. The findings suggest a methodology for manipulating the electronic structure of oxidized semiconductor layers.

J. J. K. Lång; M. P. J. Punkkinen; M. Tuominen; H.-P. Hedman; M. Vähä-Heikkilä; V. Polojärvi; J. Salmi; V.-M. Korpijärvi; K. Schulte; M. Kuzmin; R. Punkkinen; P. Laukkanen; M. Guina; K. Kokko

2014-07-29T23:59:59.000Z

259

The effect of native oxide on ion-sputtering-induced nanostructure formation on GaSb surfaces  

SciTech Connect

We have investigated the influence of native oxides on ion-sputtering-induced nanostructure formation on GaSb using in situ low energy ion scattering spectroscopy (LEISS) and X-ray photoelectron spectroscopy (XPS). Comparing an oxygen-free sample with a native oxide sample, LEISS and XPS reveal the effect of oxygen in generating higher surface Ga fractions during early stages (fluences of 1 Multiplication-Sign 10{sup 15}-1 Multiplication-Sign 10{sup 16} cm{sup -2}) of low energy (<100 eV) Ar+ irradiation. Enhanced surface Ga and Ga{sub 2}O{sub 3} fractions were also observed on 'oxide free' samples exposed to air following irradiation. The results suggest preferential Ga oxidation and segregation on the top of the amorphous layer if oxygen is present on the surface. In addition, the native oxide also increases the fluence threshold for nanopatterning of GaSb surfaces by almost a factor of four during low energy irradiation.

El-Atwani, Osman [School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Allain, J. P. [School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Suslova, Anastassiya [School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2012-12-17T23:59:59.000Z

260

ARM - Publications: Science Team Meeting Documents  

NLE Websites -- All DOE Office Websites (Extended Search)

Retrieval of Mean Cosine of Aerosol Phase Function from Extinction and Sky Retrieval of Mean Cosine of Aerosol Phase Function from Extinction and Sky Brightness Measurements Zhuravleva, T.B.(a), Sviridenkov, M.A.(b), and Anikin, P.P.(b), Institute of Atmospheric Optics SB RAS, Tomsk, Russia (a), A.M. Obukhov Institute of Atmospheric Physics RAS, Moscow, Russia (b) Thirteenth Atmospheric Radiation Measurement (ARM) Science Team Meeting Asymmetry of the aerosol phase function together with optical thickness drive the magnitude of the aerosol radiative forcing. Two approaches are usually used to obtain the mean cosine of the phase function retrieval of the single scattering phase function from sky brightness measurements or calculations for the given aerosol size distribution and refractive index. We studied the possibility to determine the mean cosine directly from

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261

Transpiration purged optical probe  

DOE Patents (OSTI)

An optical apparatus for clearly viewing the interior of a containment vessel by applying a transpiration fluid to a volume directly in front of the external surface of the optical element of the optical apparatus. The fluid is provided by an external source and transported by means of an annular tube to a capped end region where the inner tube is perforated. The perforation allows the fluid to stream axially towards the center of the inner tube and then axially away from an optical element which is positioned in the inner tube just prior to the porous sleeve. This arrangement draws any contaminants away from the optical element keeping it free of contaminants. In one of several embodiments, the optical element can be a lens, a viewing port or a laser, and the external source can provide a transpiration fluid having either steady properties or time varying properties.

2004-01-06T23:59:59.000Z

262

Quantum optical waveform conversion  

E-Print Network (OSTI)

Currently proposed architectures for long-distance quantum communication rely on networks of quantum processors connected by optical communications channels [1,2]. The key resource for such networks is the entanglement of matter-based quantum systems with quantum optical fields for information transmission. The optical interaction bandwidth of these material systems is a tiny fraction of that available for optical communication, and the temporal shape of the quantum optical output pulse is often poorly suited for long-distance transmission. Here we demonstrate that nonlinear mixing of a quantum light pulse with a spectrally tailored classical field can compress the quantum pulse by more than a factor of 100 and flexibly reshape its temporal waveform, while preserving all quantum properties, including entanglement. Waveform conversion can be used with heralded arrays of quantum light emitters to enable quantum communication at the full data rate of optical telecommunications.

D Kielpinski; JF Corney; HM Wiseman

2010-10-11T23:59:59.000Z

263

Crystal and magnetic study of the disordered perovskites Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3} and Ca(Fe{sub 0.5}Sb{sub 0.5})O{sub 3}  

SciTech Connect

We have investigated the double perovskites Ca{sub 2}MSbO{sub 6} (M = Mn, Fe) that have been prepared by solid-state reaction (M = Fe) and wet chemistry procedures (M = Mn). The crystal and magnetic structures have been studied from X-ray (XRD) and neutron powder diffraction (NPD) data. Rietveld refinements show that the crystal structures are orthorhombic (space group Pbnm) with complete disorder of M and Sb cations, so the formula should be rewritten as Ca(M{sub 0.5}Sb{sub 0.5})O{sub 3}. Due to this disorder no evidences of Jahn-Teller distortion can be observed in the MnO{sub 6} octahedra of Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3}, in contrast with the ordered double perovskite Sr{sub 2}MnSbO{sub 6}. Ca(Fe{sub 0.5}Sb{sub 0.5})O{sub 3} behaves as an antiferromagnet with an ordered magnetic moment for Fe{sup 3+} of 1.53(4){mu}{sub B} and a propagation vector k = 0, as investigated by low-temperature NPD. The antiferromagnetic ordering is a result of the high degree of Fe/Sb anti-site disorder of the sample, which originates the spontaneous formation of Fe-rich islands, characterized by the presence of strong Fe-O-Fe antiferromagnetic couplings with enough long-range coherence to produce a magnetic contribution perceptible by NPD. By contrast, the magnetic structure of Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3} cannot be observed by low-temperature NPD because the magnitude of the ordered magnetic moments is below the detection threshold for neutrons.

Retuerto, M., E-mail: mretuerto@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain); Martinez-Lope, M.J.; Garcia-Hernandez, M. [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain)] [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain); Munoz, A. [Departamento de Fisica Aplicada, EPS, Universidad Carlos III, Avda. Universidad 30, E-28911 Leganes-Madrid (Spain)] [Departamento de Fisica Aplicada, EPS, Universidad Carlos III, Avda. Universidad 30, E-28911 Leganes-Madrid (Spain); Fernandez-Diaz, M.T. [Institut Max Von Laue Paul Langevin, F-38042 Grenoble (France)] [Institut Max Von Laue Paul Langevin, F-38042 Grenoble (France); Alonso, J.A. [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain)] [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain)

2010-10-15T23:59:59.000Z

264

The influence of Zn vacancy on thermal conductivity of {beta}-Zn{sub 4}Sb{sub 3}: A molecular dynamics study  

SciTech Connect

The influence of Zn vacancy on lattice thermal conductivity of {beta}-Zn{sub 4}Sb{sub 3} is studied by non-equilibrium molecular dynamics approach. The lattice thermal conductivity of single-crystal bulk {beta}-Zn{sub 4}Sb{sub 3} decreases rapidly when there is Zn vacancy, and then when the vacancy grows, the lattice thermal conductivity decreases further but rather slowly, which suggests a scaling law of k{sub v}{approx}n{sub v}{sup -{alpha}} of Zn atom vacancy (n{sub v}) to lattice thermal conductivity (k{sub vac}). This phenomenon is attributed to the fact that the existence of vacancy scattering can significantly decrease the mean free path. When the Zn atom vacant proportion reaches 10%, that is the vacancy model of {beta}-Zn{sub 4}Sb{sub 3}, the lattice thermal conductivity is 1.32 W/mk along the x-axis and 1.62 W/mk along the z-axis, respectively, which drops by {approx}90% that of its full occupancy model. Therefore, our calculations show that the 10% Zn atom vacancy in {beta}-Zn{sub 4}Sb{sub 3} is the main reason for its exceptionally low thermal conductivity, and the interstitial Zn atoms have little effect on the thermal conductivity of single-crystal {beta}-Zn{sub 4}Sb{sub 3}. - Graphical abstract: The bulk thermal conductivity (k{sub pure}) is 11.88 W/mk along the x-axis and 20.00 W/mk the z-axis. When it is 10% vacancy, namely the vacancy model of {beta}-Zn{sub 4}Sb{sub 3}, the thermal conductivity of {beta}-Zn{sub 4}Sb{sub 3} is 1.32 W/mk along the x-axis and 1.62 W/mk along the z-axis, respectively, which reduces by {approx}90% that of its full occupancy model. Our calculations show that the 10% Zn atom vacancy in the crystal structure of {beta}-Zn{sub 4}Sb{sub 3} is the main reason for its exceptionally low thermal conductivity, and the interstitial Zn atoms have little effect on the thermal conductivity of single-crystal {beta}-Zn{sub 4}Sb{sub 3}. Highlights: Black-Right-Pointing-Pointer The lattice stability of {beta}-Zn{sub 4}Sb{sub 3} decreases remarkably with the growing vacancy. Black-Right-Pointing-Pointer 10% Zn vacancy leads to its low thermal conductivity and structural instability. Black-Right-Pointing-Pointer Interstitial Zn atoms in {beta}-Zn{sub 4}Sb{sub 3} mainly stabilize the crystal structure.

Zhai, Pengcheng [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China) [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China); State Key Laboratory of Advanced Technology of Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Li, Guodong; Wen, Pengfei [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China)] [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China); Li, Yao, E-mail: liyao06@126.com [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China)] [Department of Engineering Structure and Mechanics, Wuhan University of Technology, Wuhan 430070 (China); Zhang, Qingjie; Liu, Lisheng [State Key Laboratory of Advanced Technology of Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology of Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)

2012-09-15T23:59:59.000Z

265

Optical atomic magnetometer  

DOE Patents (OSTI)

An optical atomic magnetometers is provided operating on the principles of nonlinear magneto-optical rotation. An atomic vapor is optically pumped using linearly polarized modulated light. The vapor is then probed using a non-modulated linearly polarized light beam. The resulting modulation in polarization angle of the probe light is detected and used in a feedback loop to induce self-oscillation at the resonant frequency.

Budker, Dmitry; Higbie, James; Corsini, Eric P

2013-11-19T23:59:59.000Z

266

Optics in Brazil  

Science Journals Connector (OSTI)

For Brazilian scientists, optics is considered a leading field in technology transfer. The discipline plays a large role in the country?s ongoing scientific ...

Bagnato, Vanderlei; Brito Cruz, Carlos H de

2006-01-01T23:59:59.000Z

267

LSST Camera Optics Design  

SciTech Connect

The Large Synoptic Survey Telescope (LSST) uses a novel, three-mirror, telescope design feeding a camera system that includes a set of broad-band filters and three refractive corrector lenses to produce a flat field at the focal plane with a wide field of view. Optical design of the camera lenses and filters is integrated in with the optical design of telescope mirrors to optimize performance. We discuss the rationale for the LSST camera optics design, describe the methodology for fabricating, coating, mounting and testing the lenses and filters, and present the results of detailed analyses demonstrating that the camera optics will meet their performance goals.

Riot, V J; Olivier, S; Bauman, B; Pratuch, S; Seppala, L; Gilmore, D; Ku, J; Nordby, M; Foss, M; Antilogus, P; Morgado, N

2012-05-24T23:59:59.000Z

268

Optically measuring interior cavities  

DOE Patents (OSTI)

A method of measuring the three-dimensional volume or perimeter shape of an interior cavity includes the steps of collecting a first optical slice of data that represents a partial volume or perimeter shape of the interior cavity, collecting additional optical slices of data that represents a partial volume or perimeter shape of the interior cavity, and combining the first optical slice of data and the additional optical slices of data to calculate of the three-dimensional volume or perimeter shape of the interior cavity.

Stone, Gary Franklin (Livermore, CA)

2008-12-21T23:59:59.000Z

269

Optical limiting materials  

DOE Patents (OSTI)

Optical limiting materials. Methanofullerenes, fulleroids and/or other fullerenes chemically altered for enhanced solubility, in liquid solution, and in solid blends with transparent glass (SiO.sub.2) gels or polymers, or semiconducting (conjugated) polymers, are shown to be useful as optical limiters (optical surge protectors). The nonlinear absorption is tunable such that the energy transmitted through such blends saturates at high input energy per pulse over a wide range of wavelengths from 400-1100 nm by selecting the host material for its absorption wavelength and ability to transfer the absorbed energy into the optical limiting composition dissolved therein. This phenomenon should be generalizable to other compositions than substituted fullerenes.

McBranch, Duncan W. (Santa Fe, NM); Mattes, Benjamin R. (Santa Fe, NM); Koskelo, Aaron C. (Los Alamos, NM); Heeger, Alan J. (Santa Barbara, CA); Robinson, Jeanne M. (Los Alamos, NM); Smilowitz, Laura B. (Los Alamos, NM); Klimov, Victor I. (Los Alamos, NM); Cha, Myoungsik (Goleta, CA); Sariciftci, N. Serdar (Santa Barbara, CA); Hummelen, Jan C. (Groningen, NL)

1998-01-01T23:59:59.000Z

270

Nanotechnology for Optical Networks  

Science Journals Connector (OSTI)

Transparent optical networks will rely on electronics for control and monitoring. Integrating infrared optoelectronic devices such as lasers, modulators, and detectors onto silicon...

Sargent, Edward

271

Transverse Optical Magnetism  

Science Journals Connector (OSTI)

Magnetic interactions with light are usually so small that they are ignored, even in nonlinear optics. Scientists have discovered that parametric processes can drive the interactions...

Rand, Stephen

2010-01-01T23:59:59.000Z

272

Optical contact micrometer  

SciTech Connect

Certain examples provide optical contact micrometers and methods of use. An example optical contact micrometer includes a pair of opposable lenses to receive an object and immobilize the object in a position. The example optical contact micrometer includes a pair of opposable mirrors positioned with respect to the pair of lenses to facilitate viewing of the object through the lenses. The example optical contact micrometer includes a microscope to facilitate viewing of the object through the lenses via the mirrors; and an interferometer to obtain one or more measurements of the object.

Jacobson, Steven D.

2014-08-19T23:59:59.000Z

273

AN INTRODUCTION TO QUANTUM OPTICS...  

E-Print Network (OSTI)

AN INTRODUCTION TO QUANTUM OPTICS... ...the light as you've never seen before... Optics:http://science.howstuffworks.com/laser5.htm #12;5 DEFINITION Quantum Optics: "Quantum optics is a field in quantum physics, dealing OPTICS OPERATORS Light is described in terms of field operators for creation and annihilation of photons

Palffy-Muhoray, Peter

274

Strong Coupling between 4f Valence Instability and 3d Ferromagnetism in YbxFe4Sb12 Studied by Resonant X-Ray Emission Spectroscopy  

E-Print Network (OSTI)

electrons tends to stabilize magnetic ordered states. Permanent ferromagnets, such as Nd-Fe-B and SmStrong Coupling between 4f Valence Instability and 3d Ferromagnetism in YbxFe4Sb12 Studied valence is independent of temperature. This evidences a close interplay between the magnetic instability

Lin, Jung-Fu "Afu"

275

Synthesis and electrochemical performances of amorphous carbon-coated Sn-Sb particles as anode material for lithium-ion batteries  

SciTech Connect

The amorphous carbon coating on the Sn-Sb particles was prepared from aqueous glucose solutions using a hydrothermal method. Because the outer layer carbon of composite materials is loose cotton-like and porous-like, it can accommodate the expansion and contraction of active materials to maintain the stability of the structure, and hinder effectively the aggregation of nano-sized alloy particles. The as-prepared composite materials show much improved electrochemical performances as anode materials for lithium-ion batteries compared with Sn-Sb alloy and carbon alone. This amorphous carbon-coated Sn-Sb particle is extremely promising anode materials for lithium secondary batteries and has a high potentiality in the future use. - Graphical abstract: The amorphous carbon coating on the Sn-Sb particles was prepared from aqueous glucose solutions using a hydrothermal method. Because the outer layer carbon of composite materials is loose cotton-like and porous-like, it can accommodate the expansion and contraction of active materials to maintain the stability of the structure, and hinder effectively the aggregation of nano-sized alloy particles.

Wang Zhong [State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); General Research Institute for Nonferrous Metal, Beijing 100088 (China); Tian Wenhuai [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Liu Xiaohe [Department of Inorganic Materials, Central South University, Changsha, Hunan 410083 (China); Yang Rong [State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Li Xingguo [State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China)], E-mail: xgli@pku.edu.cn

2007-12-15T23:59:59.000Z

276

Flat Plate PV Module Eligibility Listing Procedure Updated 6/2/14 Senate Bill 1 (SB1) defines the solar incentive programs for California, and flat plate PV  

E-Print Network (OSTI)

programs for investor owned utility (IOU) territories, the California Solar Initiative (CSI) and the New the solar incentive programs for California, and flat plate PV modules 1 must be listed on the SB1 Solar Homes Partnership (NSHP), as well as solar incentive programs administered by publicly owned

277

Zintl Phases as Thermoelectric Materials: Tuned Transport Properties of the Compounds CaxYb1xZn2Sb2**  

E-Print Network (OSTI)

Zintl Phases as Thermoelectric Materials: Tuned Transport Properties of the Compounds CaxYb1±xZn2Sb. Introduction Because of their ability to convert waste heat into electricity, thermoelectric materials have in efficiency, thermoelectric materials could pro- vide a substantial amount of electrical power from automotive

278

Thermoelectric Properties of n-type Polycrystalline BixSb2-xTe3 Alloys N. Gerovac, G. J. Snyder, and T. Caillat  

E-Print Network (OSTI)

. Introduction The best thermoelectric materials are semiconductors which limit the movement of heat conducting. The quality of a thermoelectric material is described by a dimensionless figure-of-merit, ZT, which depends thermoelectric materials have been made from (Bi,Sb)2Te3 compounds. In polycrystalline form, meaning made up

279

Proceedings of the MRS Spring Meeting, San Francisco, March 1997, Symposium Q -Thermoelectrics, in press (1997) THERMAL CONDUCTIVITY OF Zn4-xCdxSb3 SOLID SOLUTIONS  

E-Print Network (OSTI)

performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further performance p-type material [1,2]. -Zn4Sb3 has interesting thermoelectric properties in the 473-673K

280

Analytical electron microscopy investigation of elemental composition and bonding structure at the Sb-doped Ni-fully-silicide/SiO{sub 2} interface  

SciTech Connect

It is very important to control the elemental composition and bonding structure at the gate electrode/gate dielectrics interface in metal-oxide-semiconductor transistor devices because this determines the threshold voltage of the gate electrode. In this study, we investigated the structure at the interface between the antimony (Sb)-doped nickel-fully-silicide gate electrode and SiO{sub 2} dielectrics by employing high-spatial resolution techniques such as energy dispersive x-ray spectroscopy and electron energy-loss spectroscopy using a scanning transmission electron microscope. In one region, we found a thin nickel layer at the NiSi/SiO{sub 2} interface originating from the migration of native oxide at the face of the poly-silicon. In another region, a Sb pileup was detected at the NiSi/SiO{sub 2} interface where the Ni L{sub 3}-edge spectrum showed Ni-Sb bonding, then it was suggested that Sb atoms exist at the bottom of NiSi, substituting for Si atoms in NiSi.

Kawasaki, Naohiko; Sugiyama, Naoyuki; Otsuka, Yuji; Hashimoto, Hideki [Morphological Research Laboratory, Toray Research Center Inc., Otsu, Shiga (Japan); Kurata, Hiroki; Isoda, Seiji [Institute for Chemical Research, Kyoto University, Uji, Kyoto (Japan)

2011-03-15T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Investigation of main coolant pump trip problem in case of SB LOCA for Kozloduy Nuclear Power Plant, WWER-440/V230  

Science Journals Connector (OSTI)

Abstract This paper presents the results of thermal-hydraulic calculation of accident scenarios that involve the trip of main coolant pump (MCP) in case of Small break loss of coolant accident (SB LOCA) for WWER-440/V230 units at Kozloduy Nuclear Power Plant (KNPP), done in support of the development of Symptom Based Emergency Operating Procedures (SB EOPs) for this plant. The main purpose of these analyses is to show how the different time of MCP switching off results in primary inventory depletion in case of SB LOCA and it is reflect on peak cladding temperature. According to this, the SB LOCA scenario is regarded from the point of view of an inadequate core cooling. Therefore, the primary concern is Critical Safety Function (CSF) “Core cooling” and “Primary inventory”. High core residual heat, minimal safety injection flow and other initial conditions challenging the mentioned \\{CSFs\\} are the main particularities of the accepted scenarios. The RELAP5/MOD3.2 computer code has been used to perform the analyses in a WWER-440 Nuclear Power Plant (NPP) model. A model of WWER-440 based on Unit 4 of Kozloduy NPP has been developed for the system’s thermal-hydraulics code RELAP5/MOD3.2 at the Institute for Nuclear Research and Nuclear Energy – Bulgarian Academy of Sciences (INRNE-BAS), Sofia.

Pavlin Groudev; Marina Andreeva; Malinka Pavlova

2015-01-01T23:59:59.000Z

282

Evolution of glass properties during a substitution of S by Se in Ge28Sb12S60-xSex glass Guillaume Guery1,2  

E-Print Network (OSTI)

Evolution of glass properties during a substitution of S by Se in Ge28Sb12S60-xSex glass network, Université de Bordeaux I, Avenue du Dr Schweitzer, 33608 Pessac Cedex, France. Keywords: Chalcogenide glass; Raman spectroscopy; X-ray photoelectron spectroscopy; Glass properties Author whom correspondence should

Paris-Sud XI, Université de

283

Future of Optical Astronomy  

Science Journals Connector (OSTI)

... I BELIEVE that optical astronomy in Great Britain has now reached, for virtually the first time in its history, ... studied in universities and in Government and industrial laboratories; but with two exceptions, optical astronomy is studied almost entirely in university laboratories only, and its future largely depends on ...

D. E. BLACKWELL

1962-09-01T23:59:59.000Z

284

Optical fuel pin scanner  

DOE Patents (OSTI)

An optical scanner for indicia arranged in a focal plane at a cylindrical outside surface by use of an optical system including a rotatable dove prism. The dove prism transmits a rotating image of an encircled cylindrical surface area to a stationary photodiode array.

Kirchner, Tommy L. (Richland, WA); Powers, Hurshal G. (Richland, WA)

1983-01-01T23:59:59.000Z

285

Optical scanning apparatus  

DOE Patents (OSTI)

An optical scanner employed in a radioactive environment for reading indicia imprinted about a cylindrical surface of an article by means of an optical system including metallic reflective and mirror surfaces resistant to degradation and discoloration otherwise imparted to glass surfaces exposed to radiation is described.

Villarreal, R.A.

1985-11-06T23:59:59.000Z

286

Vibration insensitive optical cavity  

Science Journals Connector (OSTI)

An optical cavity is designed and implemented that is insensitive to vibration in all directions. The cavity is mounted with its optical axis in the horizontal plane. A minimum response of 0.1 (3.7)kHz?ms?2 is achieved for low-frequency vertical (horizontal) vibrations.

S. A. Webster; M. Oxborrow; P. Gill

2007-01-09T23:59:59.000Z

287

Multimode optical fiber  

DOE Patents (OSTI)

A depressed graded-index multimode optical fiber includes a central core, an inner depressed cladding, a depressed trench, an outer depressed cladding, and an outer cladding. The central core has an alpha-index profile. The depressed claddings limit the impact of leaky modes on optical-fiber performance characteristics (e.g., bandwidth, core size, and/or numerical aperture).

Bigot-Astruc, Marianne; Molin, Denis; Sillard, Pierre

2014-11-04T23:59:59.000Z

288

High-Temperature Thermoelectric Properties of the Solid–Solution Zintl Phase Eu11Cd6Sb12–xAsx (x < 3)  

SciTech Connect

Zintl phases are compounds that have shown promise for thermoelectric applications. The title solid–solution Zintl compounds were prepared from the elements as single crystals using a tin flux for compositions x = 0, 1, 2, and 3. Eu11Cd6Sb12–xAsx (x < 3) crystallize isostructurally in the centrosymmetric monoclinic space group C2/m (no. 12, Z = 2) as the Sr11Cd6Sb12 structure type (Pearson symbol mC58). Efforts to make the As compositions for x exceeding ?3 resulted in structures other than the Sr11Cd6Sb12 structure type. Single-crystal X-ray diffraction indicates that As does not randomly substitute for Sb in the structure but is site specific for each composition. The amount of As determined by structural refinement was verified by electron microprobe analysis. Electronic structures and energies calculated for various model structures of Eu11Cd6Sb10As2 (x = 2) indicated that the preferred As substitution pattern involves a mixture of three of the six pnicogen sites in the asymmetric unit. In addition, As substitution at the Pn4 site opens an energy gap at the Fermi level, whereas substitution at the other five pnicogen sites remains semimetallic with a pseudo gap. Thermoelectric properties of these compounds were measured on hot-pressed, fully densified pellets. Samples show exceptionally low lattice thermal conductivities from room temperature to 775 K: 0.78–0.49 W/mK for x = 0; 0.72–0.53 W/mK for x = 1; and 0.70–0.56 W/mK for x = 2. Eu11Cd6Sb12 shows a high p-type Seebeck coefficient (from +118 to 153 ? V/K) but also high electrical resistivity (6.8 to 12.8 m?·cm). The value of zT reaches 0.23 at 774 K. The properties of Eu11Cd6Sb12–xAsx are interpreted in discussion with the As site substitution.

Kazem, Nasrin; Xie, Weiwei; Ohno, Saneyuki; Zevalkink, Alexandra; Miller, Gordon J.; Snyder, G. Jeffrey; Kauzlarich, Susan M.

2014-02-11T23:59:59.000Z

289

Fiber optic hydrophone  

DOE Patents (OSTI)

A miniature fiber optic hydrophone based on the principles of a Fabry-Perot interferometer. The hydrophone, in one embodiment, includes a body having a shaped flexible bladder at one end which defines a volume containing air or suitable gas, and including a membrane disposed adjacent a vent. An optic fiber extends into the body with one end terminating in spaced relation to the membrane. Acoustic waves in the water that impinge on the bladder cause the pressure of the volume therein to vary causing the membrane to deflect and modulate the reflectivity of the Fabry-Perot cavity formed by the membrane surface and the cleaved end of the optical fiber disposed adjacent to the membrane. When the light is transmitted down the optical fiber, the reflected signal is amplitude modulated by the incident acoustic wave. Another embodiment utilizes a fluid filled volume within which the fiber optic extends.

Kuzmenko, Paul J. (Livermore, CA); Davis, Donald T. (Livermore, CA)

1994-01-01T23:59:59.000Z

290

Digital optical conversion module  

DOE Patents (OSTI)

A digital optical conversion module used to convert an analog signal to a computer compatible digital signal including a voltage-to-frequency converter, frequency offset response circuitry, and an electrical-to-optical converter. Also used in conjunction with the digital optical conversion module is an optical link and an interface at the computer for converting the optical signal back to an electrical signal. Suitable for use in hostile environments having high levels of electromagnetic interference, the conversion module retains high resolution of the analog signal while eliminating the potential for errors due to noise and interference. The module can be used to link analog output scientific equipment such as an electrometer used with a mass spectrometer to a computer.

Kotter, Dale K. (North Shelley, ID); Rankin, Richard A. (Ammon, ID)

1991-02-26T23:59:59.000Z

291

Digital optical conversion module  

DOE Patents (OSTI)

A digital optical conversion module used to convert an analog signal to a computer compatible digital signal including a voltage-to-frequency converter, frequency offset response circuitry, and an electrical-to-optical converter. Also used in conjunction with the digital optical conversion module is an optical link and an interface at the computer for converting the optical signal back to an electrical signal. Suitable for use in hostile environments having high levels of electromagnetic interference, the conversion module retains high resolution of the analog signal while eliminating the potential for errors due to noise and interference. The module can be used to link analog output scientific equipment such as an electrometer used with a mass spectrometer to a computer. 2 figs.

Kotter, D.K.; Rankin, R.A.

1988-07-19T23:59:59.000Z

292

Fiber optic hydrophone  

DOE Patents (OSTI)

A miniature fiber optic hydrophone based on the principles of a Fabry-Perot interferometer is disclosed. The hydrophone, in one embodiment, includes a body having a shaped flexible bladder at one end which defines a volume containing air or suitable gas, and including a membrane disposed adjacent a vent. An optical fiber extends into the body with one end terminating in spaced relation to the membrane. Acoustic waves in the water that impinge on the bladder cause the pressure of the volume therein to vary causing the membrane to deflect and modulate the reflectivity of the Fabry-Perot cavity formed by the membrane surface and the cleaved end of the optical fiber disposed adjacent to the membrane. When the light is transmitted down the optical fiber, the reflected signal is amplitude modulated by the incident acoustic wave. Another embodiment utilizes a fluid filled volume within which the fiber optic extends. 2 figures.

Kuzmenko, P.J.; Davis, D.T.

1994-05-10T23:59:59.000Z

293

Optically Interconnected MulticomputersUsing  

E-Print Network (OSTI)

Optically Interconnected MulticomputersUsing Inverted-GraphTopologies Tosuccessfullyexploitthebenefitsofopticaltechnologyinatightlycoupledmulticomputer, the architecturaldesignmust reflectboth the advantages and limitationsof optics. This article systems. Although optics have con- tributed dramatically to long-distance communi- cation and more

Krchnavek, Robert R.

294

Optical amplifier-powered quantum optical amplification  

E-Print Network (OSTI)

I show that an optical amplifier, when combined with photon subtraction, can be used for quantum state amplification, adding noise at a level below the standard minimum. The device could be used to significantly decrease the probability of incorrectly identifying coherent states chosen from a finite set.

John Jeffers

2011-05-16T23:59:59.000Z

295

Studies of Cs3Sb cathodes for the CLIC drive beam photo injector option  

E-Print Network (OSTI)

Within the CLIC (Compact Linear Collider) project, feasibility studies of a photo injector option for the drive beam as an alternative to its baseline design using a thermionic electron gun are on-going. This R&D program covers both the laser and the photocathode side. Whereas the available laser pulse energy in ultra-violet (UV) is currently limited by the optical defects in the 4thharmonics frequency conversion crystal induced by the0.14 ms long pulse trains, recent measurements of Cs3Sbphotocathodes sensitive to green light showed their potential to overcome this limitation. Moreover, using visible laser beams leads to better stability of produced electron bunches and one can take advantages of the availability of higher quality optics. The studied Cs3Sbphotocathodes have been produced in the CERN photo emission laboratory using the co-deposition technique and tested in a DC gun set-up. The analysis of data acquired during the cathode production process will be presented in this paper, as well as the r...

Martini, Irene; Doebert, Steffen; Fedosseev, Valentine; Hessler, Christoph; Martyanov, Mikhail

2013-01-01T23:59:59.000Z

296

Proposal for a second-generation, lattice matched, multiple junction Ga{sub 2}AsSb TPV converter  

SciTech Connect

First order device modeling is used to show that spontaneously ordered Ga{sub 2}AsSb may prove useful in the newly-active field of thermophotovoltaic power generation. Optimal band gaps for single-, double- and triple-junction III-V devices are presented for a range of blackbody emitter temperatures (1000--2000 K), and it is shown that monolithic, current-matched devices may be constructed that are lattice-matched throughout the stack to an underlying InP substrate. Device efficiency, short-circuit current, fill factor, and open-circuit voltage calculations are presented. The power generation capabilities are expected to be substantial due to the proximity of the devices to the thermal radiators. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

Horner, G.S. [Keithley Instruments, Solon Ohio (United States); Coutts, T.J.; Wanlass, M.W. [National Renewable Energy Laboratory, Golden Colorado (United States)

1995-01-05T23:59:59.000Z

297

Thermodynamic and transport properties of single-crystal Yb{sub 14}MnSb{sub 11}  

SciTech Connect

Relatively large (up to 250 mg) single crystals of the intermetallic compound Yb{sub 14}MnSb{sub 11} have been prepared by a flux-growth technique. The results of thermodynamic and transport measurements of these samples are presented. The compound orders ferromagnetically at approximately T{sub C}=53{plus_minus}1K, with a magnetization consistent with the assignment Mn{sup 3+} (3d{sup 4}) and Yb{sup 2+} (4f{sup 14}). The Mn moments are local in nature, with the full effective and saturated moment of the Hund{close_quote}s rule spin-only ground state. The electrical resistivity has a metallic temperature dependence, with only a modest anisotropy. Room-temperature values of the resistivity are relatively high for an intermetallic compound: 1630{plus_minus}160 {mu}{Omega}cm and 1250{plus_minus}130 {mu}{Omega}cm for currents flowing approximately parallel and perpendicular to the {ital c} axis, respectively. There is a distinct loss of spin-disorder scattering in the resistivity at T{sub C}. From the heat capacity, a rough estimation of the magnetic entropy gives {Delta}S{sub M}{approx}12.1 J/mol K, the value in reasonable agreement with the expected {Delta}S{sub M}{approx}R ln 5 from the assignment of these moments. All of these data are consistent with a picture of Mn{sup 3+} local moments being coupled via conduction electrons. To this end, Yb{sub 14}MnSb{sub 11} appears to be analogous to local-moment rare-earth intermetallic compounds, and may point the way toward a class of 3d Kondo lattice compounds. {copyright} {ital 1999} {ital The American Physical Society}

Fisher, I.R.; Wiener, T.A.; Budko, S.L.; Canfield, P.C. [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)] [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States); Chan, J.Y.; Kauzlarich, S.M. [Department of Chemistry, One Shields Avenue, University of California, Davis, California 95616 (United States)] [Department of Chemistry, One Shields Avenue, University of California, Davis, California 95616 (United States)

1999-06-01T23:59:59.000Z

298

Thermoelectric properties of chalcopyrite type CuGaTe{sub 2} and chalcostibite CuSbS{sub 2}  

SciTech Connect

Electronic and transport properties of CuGaTe{sub 2}, a hole-doped ternary copper based chalcopyrite type semiconductor, are studied using calculations within the Density Functional Theory and solving the Boltzmann transport equation within the constant relaxation time approximation. The electronic band structures are calculated by means of the full-potential linear augmented plane wave method, using the Tran-Blaha modified Becke-Johnson potential. The calculated band gap of 1.23?eV is in agreement with the experimental value of 1.2?eV. The carrier concentration- and temperature dependent thermoelectric properties of CuGaTe{sub 2} are derived, and a figure of merit of zT?=?1.69 is obtained at 950?K for a hole concentration of 3.7·10{sup 19}?cm{sup ?3}, in agreement with a recent experimental finding of zT?=?1.4, confirming that CuGaTe{sub 2} is a promising material for high temperature thermoelectric applications. The good thermoelectric performance of p-type CuGaTe{sub 2} is associated with anisotropic transport from a combination of heavy and light bands. Also for CuSbS{sub 2} (chalcostibite), a better performance is obtained for p-type than for n-type doping. The variation of the thermopower as a function of temperature and concentration suggests that CuSbS{sub 2} will be a good thermoelectric material at low temperatures, similarly to the isostructural CuBiS{sub 2} compound.

Kumar Gudelli, Vijay; Kanchana, V., E-mail: kanchana@iith.ac.in [Department of Physics, Indian Institute of Technology Hyderabad, Ordnance Factory Estate, Yeddumailaram 502 205, Andhra Pradesh (India); Vaitheeswaran, G. [Advanced Centre of Research in High Energy Materials (ACRHEM), University of Hyderabad, Prof. C. R. Rao Road, Gachibowli, Hyderabad 500 046, Andhra Pradesh (India); Svane, A.; Christensen, N. E. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark)

2013-12-14T23:59:59.000Z

299

Science, Optics and You: Shadows  

NLE Websites -- All DOE Office Websites (Extended Search)

http:micro.magnet.fsu.eduopticstutorialsindex.html INTRODUCTION SHADOWS MODULE m5 SCIENCE, OPTICS & YOU GUIDEBOOK - 96 - SCIENCE, OPTICS & YOU GUIDEBOOK - 97 - m5: Shadows...

300

Optical Modulation of Molecular Conductance  

NLE Websites -- All DOE Office Websites (Extended Search)

Optical Modulation of Molecular Conductance Authors: Battacharyya, S., Kibel, A., Kodis, G., Liddell, P. A., Gervaldo, M., Gust, D., and Lindsay, S. Title: Optical Modulation of...

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Crystal structure of the new compound Pb{sub 3+x}Sb{sub 3-x}S{sub 7-x}Cl{sub 1+x}(x{approx}0.45): The homologous series Pb{sub (2+2N)}(Sb,Pb){sub (2+2N)}S{sub (2+2N)}(S,Cl){sub (4+2N)}Cl{sub N} and its polychalcogenide derivatives (N=1-3)  

SciTech Connect

The new chloro-sulfosalt Pb{sub 3+x}Sb{sub 3-x}S{sub 7-x}Cl{sub 1+x} (x{approx}0.45) has been synthesized at 500 deg. C from a mixture of PbS, PbCl{sub 2} and Sb{sub 2}S{sub 3}. It crystallizes in the orthorhombic system (space group Pbam), with a=15.194(3) A, b=23.035(5) A, c=4.0591(8) A, V=1420.6 A{sup 3}, Z=4. The crystal structure has been solved by X-ray single-crystal study, with a final R=0.0497. Deviation from stoichiometric Pb{sub 3}Sb{sub 3}S{sub 7}Cl (x coefficient) follows the substitution rule Sb{sup 3+}+S{sup 2-}{yields}Pb{sup 2+}+Cl{sup -}. Sb and Pb sub-positions within mixed (Sb,Pb) sites are discussed; Pb excess precludes any superstructure along c. A unique pure Cl position is bound only to Pb atoms with a distorted square coordination. The title compound is a rod-type structure derived from the SnS archetype, homeotypic with Pb{sub 6}Sb{sub 6}S{sub 14}(S{sub 3}), where the (S{sub 3}){sup 2-} trimer is replaced by two Cl{sup -}; this substitution is quite isovolumic. Other similar structures are: three polychalcogenides Sr{sub 6}Sb{sub 6}S{sub 14}(S{sub 3}), Pb{sub 6}Sb{sub 6}Se{sub 14}(Se{sub 3}) and Eu{sub 6}Sb{sub 6}S{sub 14}(S{sub 3}); KLa{sub 1.28}Bi{sub 3.72}S{sub 8} and its Ln isotypes; dadsonite, Pb{sub 23}Sb{sub 25}S{sub 60}Cl. Pb{sub 3+x}Sb{sub 3-x}S{sub 7-x}Cl{sub 1+x} is the N=2 member of the homologous series Pb{sub (2+2N)}(Sb,Pb){sub (2+2N)}S{sub (2+2N)}(S,Cl){sub (4+2N)}Cl{sub N}; the N=1 member corresponds to the previously known {approx}Pb{sub 4.3}Sb{sub 3.7}S{sub 8.7}Cl{sub 2.3} compound. Other polychalcogenide derivatives of this homologous series are K{sub 2}Pr{sub 2-x}Sb{sub 4+x}Se{sub 8}(Se{sub 4}) and its Ln isotypes (N=1), as well as SrBiSe{sub 3} (N=3). Such a comparative modular analysis allowed to propose a structural model for the previous synthetic 'Phase Y', {approx}Pb{sub 10}Sb{sub 10}S{sub 23}Cl{sub 4}, corresponding to the combined N=(1+2) homolog. - Graphical abstract: The title compound, Pb{sub 3+x}Sb{sub 3-x}S{sub 7-x}Cl{sub 1+x}, is derived from the homeotypic persulfide Pb{sub 6}Sb{sub 6}S{sub 14}(S{sub 3}) by substituting two chlorine atoms for the S{sub 3} trimer. This change is quite isovolumic.

Doussier, Charlotte [Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes, CNRS, 2 rue de la Houssiniere, BP 32229, 44322 Nantes Cedex 3 (France); Moelo, Yves [Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes, CNRS, 2 rue de la Houssiniere, BP 32229, 44322 Nantes Cedex 3 (France)], E-mail: yves.moelo@cnrs-imn.fr; Meerschaut, Alain; Leone, Philippe; Guillot-Deudon, Catherine [Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes, CNRS, 2 rue de la Houssiniere, BP 32229, 44322 Nantes Cedex 3 (France)

2008-04-15T23:59:59.000Z

302

Gregorian optical system with non-linear optical technology for protection against intense optical transients  

DOE Patents (OSTI)

An optical system comprising a concave primary mirror reflects light through an intermediate focus to a secondary mirror. The secondary mirror re-focuses the image to a final image plane. Optical limiter material is placed near the intermediate focus to optically limit the intensity of light so that downstream components of the optical system are protected from intense optical transients. Additional lenses before and/or after the intermediate focus correct optical aberrations.

Ackermann, Mark R. (Albuquerque, NM); Diels, Jean-Claude M. (Albuquerque, NM)

2007-06-26T23:59:59.000Z

303

Silicon fiber optic sensors  

DOE Patents (OSTI)

A Fabry-Perot cavity is formed by a partially or wholly reflective surface on the free end of an integrated elongate channel or an integrated bounding wall of a chip of a wafer and a partially reflective surface on the end of the optical fiber. Such a constructed device can be utilized to detect one or more physical parameters, such as, for example, strain, through the optical fiber using an optical detection system to provide measuring accuracies of less than aboutb0.1%.

Pocha, Michael D. (Livermore, CA); Swierkowski, Steve P. (Livermore, CA); Wood, Billy E. (Livermore, CA)

2007-10-02T23:59:59.000Z

304

Optical Quadratic Measure Eigenmodes  

E-Print Network (OSTI)

We report a mathematically rigorous technique which facilitates the optimization of various optical properties of electromagnetic fields. The technique exploits the linearity of electromagnetic fields along with the quadratic nature of their interaction with matter. In this manner we may decompose the respective fields into optical quadratic measure eigenmodes (QME). Key applications include the optimization of the size of a focused spot, the transmission through photonic devices, and the structured illumination of photonic and plasmonic structures. We verify the validity of the QME approach through a particular experimental realization where the size of a focused optical field is minimized using a superposition of Bessel beams.

Michael Mazilu; Joerg Baumgartl; Sebastian Kosmeier; Kishan Dholakia

2010-07-13T23:59:59.000Z

305

Fiber optic laser rod  

DOE Patents (OSTI)

A laser rod is formed from a plurality of optical fibers, each forming an individual laser. Synchronization of the individual fiber lasers is obtained by evanescent wave coupling between adjacent optical fiber cores. The fiber cores are dye-doped and spaced at a distance appropriate for evanescent wave coupling at the wavelength of the selected dye. An interstitial material having an index of refraction lower than that of the fiber core provides the optical isolation for effective lasing action while maintaining the cores at the appropriate coupling distance. 2 figs.

Erickson, G.F.

1988-04-13T23:59:59.000Z

306

Tuned optical cavity magnetometer  

DOE Patents (OSTI)

An atomic magnetometer is disclosed which utilizes an optical cavity formed from a grating and a mirror, with a vapor cell containing an alkali metal vapor located inside the optical cavity. Lasers are used to magnetically polarize the alkali metal vapor and to probe the vapor and generate a diffracted laser beam which can be used to sense a magnetic field. Electrostatic actuators can be used in the magnetometer for positioning of the mirror, or for modulation thereof. Another optical cavity can also be formed from the mirror and a second grating for sensing, adjusting, or stabilizing the position of the mirror.

Okandan, Murat (Edgewood, NM); Schwindt, Peter (Albuquerque, NM)

2010-11-02T23:59:59.000Z

307

Materials developments for write-once and erasable phase-change optical recording  

Science Journals Connector (OSTI)

Stoichiometric amorphous films of InSb or GaSb are found to have very short (<15 ns) crystallization times when heated to temperatures close to their melting point. They can be used...

Gravesteijn, Dirk J

1988-01-01T23:59:59.000Z

308

Jessen/Deutsch, "Optical Lattices" 1 OPTICAL LATTICES  

E-Print Network (OSTI)

Jessen/Deutsch, "Optical Lattices" 1 OPTICAL LATTICES P. S. JESSEN Optical Sciences Center@rhea.opt-sci.arizona.edu I. H. DEUTSCH Center for Advanced Studies University of New Mexico Albuquerque, NM, 87131 Phone, 1996). #12;Jessen/Deutsch, "Optical Lattices" 2 CONTENTS I. Introduction

Jessen, Poul S.

309

Adaptive optics enhanced simultaneous en-face optical coherence tomography  

E-Print Network (OSTI)

Adaptive optics enhanced simultaneous en-face optical coherence tomography and scanning laser ophthalmoscopy David Merino and Chris Dainty Applied Optics Group, Department of Experimental Physics, National and Adrian Gh. Podoleanu Applied Optics Group, School of Physical Sciences, University of Kent at Canterbury

Dainty, Chris

310

Optical Landau damping  

SciTech Connect

We study the transfer of energy from an optical potential to atomic and molecular gases and demonstrate that this process is analogous to collisionless Landau damping of electrostatic potentials in plasmas and gravitational potentials observed on astrophysical scales. We show that a signficant fraction of the light attenuation within a cavity can be attributed to this mechanism when the cavity is filled with a gas at high density. The resulting motion of particles created by optical Landau damping can be used to induce transport when a periodic potential produced by two counterpropagating high-intensity pulsed optical fields is used. Bulk drift of the gas also appears feasible even when the mean kinetic energy is much greater that the maximum optical potential.

Shneider, M.N.; Barker, P.F. [Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544 (United States); Department of Physics, School of Engineering and Physical Sciences, Heriott-Watt University, Edinburgh EH14 4AS, Scotland (United Kingdom)

2005-05-15T23:59:59.000Z

311

Cryogenic optical refrigeration.  

E-Print Network (OSTI)

??This thesis compiles recent achievements in optical refrigeration, cooling a 5 wt. % ytterbium doped yttrium lithium fluoride (Yb+3:YLF) crystal through anti-Stokes fluorescence to a… (more)

Melgaard, Seth

2011-01-01T23:59:59.000Z

312

Intracoronary Optical Diagnostics  

E-Print Network (OSTI)

Optical coherence tomography (OCT), is a novel intravascular imaging modality analogous to intravascular ultrasound but uses light instead of sound. This review details the background, development, and status of current ...

Lowe, Harry C.

313

Optical displacement sensor  

DOE Patents (OSTI)

An optical displacement sensor is disclosed which uses a vertical-cavity surface-emitting laser (VCSEL) coupled to an optical cavity formed by a moveable membrane and an output mirror of the VCSEL. This arrangement renders the lasing characteristics of the VCSEL sensitive to any movement of the membrane produced by sound, vibrations, pressure changes, acceleration, etc. Some embodiments of the optical displacement sensor can further include a light-reflective diffractive lens located on the membrane or adjacent to the VCSEL to control the amount of lasing light coupled back into the VCSEL. A photodetector detects a portion of the lasing light from the VCSEL to provide an electrical output signal for the optical displacement sensor which varies with the movement of the membrane.

Carr, Dustin W. (Albuquerque, NM)

2008-04-08T23:59:59.000Z

314

Optical Quantum Computing  

E-Print Network (OSTI)

In 2001 all-optical quantum computing became feasible with the discovery that scalable quantum computing is possible using only single photon sources, linear optical elements, and single photon detectors. Although it was in principle scalable, the massive resource overhead made the scheme practically daunting. However, several simplifications were followed by proof-of-principle demonstrations, and recent approaches based on cluster states or error encoding have dramatically reduced this worrying resource overhead, making an all-optical architecture a serious contender for the ultimate goal of a large-scale quantum computer. Key challenges will be the realization of high-efficiency sources of indistinguishable single photons, low-loss, scalable optical circuits, high efficiency single photon detectors, and low-loss interfacing of these components.

Jeremy L. O'Brien

2008-03-11T23:59:59.000Z

315

Stereoscopic optical viewing system  

DOE Patents (OSTI)

An improved optical system which provides the operator with a stereoscopic viewing field and depth of vision, particularly suitable for use in various machines such as electron or laser beam welding and drilling machines. The system features two separate but independently controlled optical viewing assemblies from the eyepiece to a spot directly above the working surface. Each optical assembly comprises a combination of eye pieces, turning prisms, telephoto lenses for providing magnification, achromatic imaging relay lenses and final stage pentagonal turning prisms. Adjustment for variations in distance from the turning prisms to the workpiece, necessitated by varying part sizes and configurations and by the operator's visual accuity, is provided separately for each optical assembly by means of separate manual controls at the operator console or within easy reach of the operator.

Tallman, C.S.

1986-05-02T23:59:59.000Z

316

Optical gamma thermometer  

DOE Patents (OSTI)

An optical gamma thermometer includes a metal mass having a temperature proportional to a gamma flux within a core of a nuclear reactor, and an optical fiber cable for measuring the temperature of the heated metal mass. The temperature of the heated mass may be measured by using one or more fiber grating structures and/or by using scattering techniques, such as Raman, Brillouin, and the like. The optical gamma thermometer may be used in conjunction with a conventional reactor heat balance to calibrate the local power range monitors over their useful in-service life. The optical gamma thermometer occupies much less space within the in-core instrument tube and costs much less than the conventional gamma thermometer.

Koster, Glen Peter; Xia, Hua; Lee, Boon Kwee

2013-08-06T23:59:59.000Z

317

Absorbance modulation optical lithography  

E-Print Network (OSTI)

In this thesis, the concept of absorbance-modulation optical lithography (AMOL) is described, and the feasibility experimentally verified. AMOL is an implementation of nodal lithography, which is not bounded by the diffraction ...

Tsai, Hsin-Yu Sidney

2007-01-01T23:59:59.000Z

318

Fiber optic fluid detector  

DOE Patents (OSTI)

Particular gases or liquids are detected with a fiber optic element having a cladding or coating of a material which absorbs the fluid or fluids and which exhibits a change of an optical property, such as index of refraction, light transmissiveness or fluoresence emission, for example, in response to absorption of the fluid. The fluid is sensed by directing light into the fiber optic element and detecting changes in the light, such as exit angle changes for example, that result from the changed optical property of the coating material. The fluid detector may be used for such purposes as sensing toxic or explosive gases in the atmosphere, measuring ground water contamination or monitoring fluid flows in industrial processes, among other uses. 10 figs.

Angel, S.M.

1987-02-27T23:59:59.000Z

319

Electro-Optical Characterization  

SciTech Connect

In the Electro-Optical Characterization group, within the National Center for Photovoltaic's Measurements and Characterization Division, we use various electrical and optical experimental techniques to relate photovoltaic device performance to the methods and materials used to produce them. The types of information obtained by these techniques range from small-scale atomic-bonding information to large-scale macroscopic quantities such as optical constants and electron-transport properties. Accurate and timely measurement of the electro-optical properties as a function of device processing provides researchers and manufacturers with the knowledge needed to troubleshoot problems and develop the knowledge base necessary for reducing cost, maximizing efficiency, improving reliability, and enhancing manufacturability. We work collaboratively with you to solve materials- and device-related R&D problems. This sheet summarizes our primary techniques and capabilities.

Not Available

2006-06-01T23:59:59.000Z

320

Optical Quantum Computation  

E-Print Network (OSTI)

We review the field of Optical Quantum Computation, considering the various implementations that have been proposed and the experimental progress that has been made toward realizing them. We examine both linear and nonlinear approaches and both particle and field encodings. In particular we discuss the prospects for large scale optical quantum computing in terms of the most promising physical architectures and the technical requirements for realizing them.

T. C. Ralph; G. J. Pryde

2011-03-31T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
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321

Relaying an optical wavefront  

DOE Patents (OSTI)

A wavefront rely devices samples an incoming optical wavefront at different locations, optically relays the samples while maintaining the relative position of the samples and the relative phase between the samples. The wavefront is reconstructed due to interference of the samples. Devices can be designed for many different wavelengths, including for example the ultraviolet, visible, infrared and even longer wavelengths such as millimeter waves. In one application, the device function as a telescope but with negligible length.

Sweatt, William C. (Albuquerque, NM); Vawter, G. Allen (Corrales, NM)

2007-03-06T23:59:59.000Z

322

Fault location in optical networks  

DOE Patents (OSTI)

One apparatus embodiment includes an optical emitter and a photodetector. At least a portion of the optical emitter extends a radial distance from a center point. The photodetector provided around at least a portion of the optical emitter and positioned outside the radial distance of the portion of the optical emitter.

Stevens, Rick C. (Apple Valley, MN); Kryzak, Charles J. (Mendota Heights, MN); Keeler, Gordon A. (Albuquerque, NM); Serkland, Darwin K. (Albuquerque, NM); Geib, Kent M. (Tijeras, NM); Kornrumpf, William P. (Schenectady, NY)

2008-07-01T23:59:59.000Z

323

Optical computing Damien Woods a  

E-Print Network (OSTI)

Optical computing Damien Woods a aDepartment of Computer Science and Artificial Intelligence Institute, Vierimaantie 5, 84100 Ylivieska, Finland Abstract In this survey we consider optical computers of such optical computing archi- tectures, including descriptions of the type of hardware commonly used in optical

Woods, Damien

324

Optical Solitons and their applications  

E-Print Network (OSTI)

Optical Solitons and their applications By: Mohammad Nopoush Supervisor: Professor Palffy-Muhoray #12;Definition Optical: Non-changing optical field during propagation due to delicate balance between nonlinear and linear effects. Nonlinear effects: Due to the optical Kerr effect (AC Kerr effect

Palffy-Muhoray, Peter

325

Undergraduate Handbook Dear Optics student,  

E-Print Network (OSTI)

Undergraduate Handbook Fall 2013 #12;2 Dear Optics student, It is my great pleasure to welcome you to The Institute of Optics. The Institute of Optics has been educating the next generation of leaders in the field since it was founded in 1929 as the first optics department in the country

Cantlon, Jessica F.

326

Embedded fiducials in optical surfaces  

DOE Patents (OSTI)

Embedded fiducials are provided in optical surfaces and a method for embedding the fiducials. Fiducials, or marks on a surface, are important for optical fabrication and alignment, particularly when individual optical elements are aspheres. Fiducials are used during the course of the polishing process to connect interferometric data, and the equation describing the asphere, to physical points on the optic. By embedding fiducials below the surface of the optic and slightly outside the clear aperture of the optic, the fiducials are not removed by polishing, do not interfere with the polishing process, and do not affect the performance of the finished optic.

Sommargren, Gary E. (Santa Cruz, CA)

2000-01-01T23:59:59.000Z

327

E-Print Network 3.0 - applied optical metrology Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

Optical Sciences Summary: Research - Quantum Optics Applied Optics & Photonics - Optoelectronics - Optical Communications - Medical... Optics Engineering - Optical System Design...

328

INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF OPTICS A: PURE AND APPLIED OPTICS Polarization Optics  

E-Print Network (OSTI)

INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF OPTICS A: PURE AND APPLIED OPTICS EDITORIAL Polarization Optics Guest Editors Jari Turunen University of Joensuu, Finland Asher A Friesem Weizmann Institute This special issue on Polarization Optics contains one review article and 23 research papers, many of which

Friesem, Asher A.

329

Composites of Bi{sub 2-x}Sb{sub x}Te{sub 3} nanocrystals and fullerene molecules for thermoelectricity  

SciTech Connect

New nanocomposite thermoelectric material composed from nanocrystallites of Bi-Sb-Te alloys covered by C{sub 60} molecules has been synthesized and studied. An increase of fullerene content leads to the growth of hole concentration in p-type materials and reduction of electron concentration in n-type materials. The fullerene molecules provide additional scattering of phonons reducing lattice heat conductivity. Reduction of heat conductivity exceeds the reduction of electrical conductivity for fullerene content less than 0.5 volume % and essential enhances the thermoelectric figure of merit. The maximum value of thermoelectric figure of merit equals to 1.17 at 450 K was observed in Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} composite containing 0.5 volume % C{sub 60} molecules. The experimental results were analyzed in a frame of the model based on the Boltzmann equation. The analysis considers light and heavy electrons and holes and accounts the intervalley scattering of charge carriers. The calculations of the kinetic coefficients shows that the improvement of the thermoelectric figure of merit originates from the reduction of the lattice heat conductivity caused by fullerene molecules. The dependencies of the thermoelectric figure of merit on the acceptor concentration were calculated. - Graphical abstract: New nanocomposite thermoelectric material composed from nanocrystallites of Bi-Sb-Te alloys covered by C{sub 60} molecules has been synthesized and studied. An increase of fullerene content leads to the growth of hole concentration in p-type materials and reduction of electron concentration in n-type materials. The fullerene molecules provide additional scattering of phonons reducing lattice heat conductivity and enhances the thermoelectric figure of merit. The maximum value of thermoelectric figure of merit equal to 1.17 at 450 K was observed in Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} composite containing 0.5 volume % fullerene molecules. Simulations of thermoelectric properties were made in frame of four bands, 12 valleys Boltzmann equation approach. Simulated and measured temperature dependencies of thermoelectric properties were compared to get unknown model parameters. These parameters were used to calculate dependencies of thermoelectric properties on acceptor concentration. Calculated dependencies of thermoelectric figure of merit on acceptor concentration are presented in the figure for p-type composites with 0 vol.% C{sub 60} (solid lines) and 0.5 vol.% C{sub 60} (dashed lines). Highlights: Black-Right-Pointing-Pointer C{sub 60} doping of Bi-Sb-Te has acceptor effect. Black-Right-Pointing-Pointer Fullerene molecules prevent recrystallization in Bi-Sb-Te nanocomposites. Black-Right-Pointing-Pointer C{sub 60} in Bi-Sb-Te nanocomposites essentially reduces lattice thermal conductivity. Black-Right-Pointing-Pointer Thermoelectric figure of merit in nanocomposite C{sub 60}-Bi-Sb-Te enhanced.

Kulbachinskii, V.A., E-mail: kulb@mig.phys.msu.ru [M.V. Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1-3, Moscow 119991 GSP-1 (Russian Federation); Kytin, V.G. [M.V. Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1-3, Moscow 119991 GSP-1 (Russian Federation)] [M.V. Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1-3, Moscow 119991 GSP-1 (Russian Federation); Popov, M.Yu.; Buga, S.G.; Stepanov, P.B.; Blank, V.D. [Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow Region 142190 (Russian Federation)] [Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow Region 142190 (Russian Federation)

2012-09-15T23:59:59.000Z

330

Preferred orientation of nanoscale order at the surface of amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} films  

SciTech Connect

We report evidence that as-deposited amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} thin films contain nanoscale clusters that exhibit a preferred orientation, attributed to the earliest stages of heterogeneous nucleation. Fluctuation transmission electron microscopy reveals structural order in the samples, but (220)-related contributions are suppressed. When homogeneous nucleation is promoted via electron bombardment, the sample remains diffraction amorphous but the (220) contribution appears. We simulated data for randomly oriented nanoscale order using ab initio molecular-dynamics models of Ge{sub 2}Sb{sub 2}Te{sub 5}. The simulated (220) contribution always has larger magnitude than higher-order signals; thus, the lack of the experimental signal indicates a significant preferred orientation.

Tony Li, Tian; Abelson, John R. [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St., Urbana, Illinois 61801 (United States) [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St., Urbana, Illinois 61801 (United States); Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1308 W. Main St., Urbana, Illinois 61801 (United States); Hoon Lee, Tae; Elliott, Stephen R. [Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW (United Kingdom)] [Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW (United Kingdom)

2013-11-11T23:59:59.000Z

331

Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs  

SciTech Connect

A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been carried out in IC1/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 prrdmin for InP, 3.6 prnh-nin for InSb, 2.3 pm/min for InGaP and 2.2 ~rrdmin for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: the etch rates increased substantially with increasing the ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than IC1/Ar, but the etched surface mophologies were fairly poor for both chemistries.

Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Hobson, W.S.; Jung, K.B.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

1998-11-23T23:59:59.000Z

332

Nepheline Formation Potential in Sludge Batch 4 (SB4) and Its Impact on Durability: Selecting Glasses for a Phase 2 Study  

SciTech Connect

The likelihood for the formation of nepheline in Sludge Batch 4 (SB4) glass systems and the potential impact of nepheline on the durability of these systems is part of the frit development efforts for SB4. The effect of crystallization on glass durability is complex and depends on several interrelated factors including the change in residual glass composition, the formation of internal stress or microcracks, and the preferential attack at the glass-crystal interface. Perhaps one of the most significant effects is the type and extent (or fraction) of crystallization and the change to the residual glass composition. A strong increase in glass dissolution (or decrease in durability) has been observed in previous studies in glasses that formed aluminum-containing crystals, such as NaAlSiO{sub 4} (nepheline) and LiAlSi{sub 2}O{sub 6}, and crystalline SiO{sub 2}. Although it is well known that the addition of Al{sub 2}O{sub 3} to borosilicate glasses enhances the durability of the waste form (through creation of network-forming tetrahedral Na{sup +}-[AlO{sub 4/2}]{sup -} pairs), the combination of high Al{sub 2}O{sub 3} and Na{sub 2}O can lead to the formation of nepheline (NaAlSiO{sub 4}). Given the projected high concentration of Al{sub 2}O{sub 3} in SB4 and the potential use of a high Na{sub 2}O based frit to improve melt rate and a high Na{sub 2}O sludge due to settling problems, the potential formation of nepheline in various SB4 systems continues to be assessed. The most recent compositional projections from the Closure Business Unit (CBU) for SB4 may be framed around three decision areas: the sodium molarity of the sludge (at values of 1M Na and 1.6M Na), the SB3 heel that will be included in the batch (expressed in inches of SB3 sludge with values of 0, 40, and 127''), and the introduction of an ARP stream into the sludge (which is represented by six options: no ARP, ARPa, ARPe, ARPk, ARPm, and ARPv). Candidate frits are being identified for these options via a paper study approach with the intent of downselecting to a set of key frits whose operating windows (i.e., waste loading intervals that meet Product Composition Control System (PCCS) Measurement Acceptability Region (MAR) criteria) are robust to and/or selectively optimal for these sludge options. The primary or key frits that appear attractive on paper (i.e., down selected via the paper study) will be transferred into SRNL's experimental studies supporting SB4; specifically, the melt-rate studies, chemical process cell flowsheet runs and, if needed, a glass variability study.

Peeler, D

2005-08-15T23:59:59.000Z

333

Strain modified/enhanced ferromagnetism in Mn{sub 3}Ge{sub 2} thin films on GaAs(001) and GaSb(001)  

SciTech Connect

Ferromagnetic Mn{sub 3}Ge{sub 2} thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. The results of our work revealed that the substrate facilitates to modify magnetic and electrical properties of Mn{sub 3}Ge{sub 2} films due to tensile/compressive strain effect between films and substrates. The characteristic spin-flopping transition at around 150 K for the bulk Mn{sub 3}Ge{sub 2} disappeared completely for both samples. The antiferromagnetism below 150 K changed to ferromagnetism and retained above room temperature. The saturation magnetization was found to be 0.23 and 1.32 {mu}{sub B}/Mn atom at 10 K for the samples grown on GaSb(001) and GaAs(001), respectively.

Dang Duc Dung; Duong Van Thiet [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet Road, Ha Noi (Viet Nam); Feng Wuwei; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Park, In-Sung [Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Bo Lee, Sung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)

2013-04-21T23:59:59.000Z

334

Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m  

SciTech Connect

The spectral-kinetic properties of heterostructures with GaAs/GaAsSb-based and GaAsSb/InGaAs/GaAs-based quantum wells, emitting in the range of 1.0-1.2 {mu}m are studied with picosecond and nanosecond temporal resolution. Intense photoluminescence in the GaAsSb/InGaAs/GaAs structure, as well as an increase in the photoluminescence wavelength by a factor of 2.5 and a shift of the location of the maximum of the peak ({approx}100 meV) to the longer-wavelength region were observed up to room temperature. It is established that as the molar fraction of Sb and the thickness of the InGaAs layer increase, the energy of the fundamental transition decreases by a factor of 140 meV compared with the GaAsSb/InGaAs/GaAs structure with a lower Sb content and a smaller thickness of the InGaAs layer. At 300 K, the emission wavelength of such a structure was 1.18 {mu}m. In addition, an increase in the thickness of the InGaAs layer led to an increase in the room-temperature photoluminescence intensity by a factor of 60, which is associated with a decrease in the energy of the fundamental state for electrons in the InGaAs layer and, consequently, to larger electron localization and smaller temperature quenching of photoluminescence.

Morozov, S. V., E-mail: more@ipm.sci.-nnov.ru; Kryzhkov, D. I.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Vikhrova, O. I. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)] [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

2013-11-15T23:59:59.000Z

335

SLUDGE BATCH 7 (SB7) WASHING DEMONSTRATION TO DETERMINE SULFATE/OXALATE REMOVAL EFFICIENCY AND SETTLING BEHAVIOR  

SciTech Connect

To support Sludge Batch 7 (SB7) washing, a demonstration of the proposed Tank Farm washing operation was performed utilizing a real-waste test slurry generated from Tank 4, 7, and 12 samples. The purpose of the demonstration was twofold: (1) to determine the settling time requirements and washing strategy needed to bring the SB7 slurry to the desired endpoint; and (2) to determine the impact of washing on the chemical and physical characteristics of the sludge, particularly those of sulfur content, oxalate content, and rheology. Seven wash cycles were conducted over a four month period to reduce the supernatant sodium concentration to approximately one molar. The long washing duration was due to the slow settling of the sludge and the limited compaction. Approximately 90% of the sulfur was removed through washing, and the vast majority of the sulfur was determined to be soluble from the start. In contrast, only about half of the oxalate was removed through washing, as most of the oxalate was initially insoluble and did not partition to the liquid phase until the latter washes. The final sulfur concentration was 0.45 wt% of the total solids, and the final oxalate concentration was 9,900 mg/kg slurry. More oxalate could have been removed through additional washing, although the washing would have reduced the supernatant sodium concentration.The yield stress of the final washed sludge (35 Pa) was an order of magnitude higher than that of the unwashed sludge ({approx}4 Pa) and was deemed potentially problematic. The high yield stress was related to the significant increase in insoluble solids that occurred ({approx}8 wt% to {approx}18 wt%) as soluble solids and water were removed from the slurry. Reduction of the insoluble solids concentration to {approx}14 wt% was needed to reduce the yield stress to an acceptable level. However, depending on the manner that the insoluble solids adjustment was performed, the final sodium concentration and extent of oxalate removal would be prone to change. As such, the strategy for completing the final wash cycle is integral to maintaining the proper balance of chemical and physical requirements.

Reboul, S.; Click, D.; Lambert, D.

2010-12-10T23:59:59.000Z

336

Fiber optic hydrogen sensor  

DOE Patents (OSTI)

An apparatus and method for detecting a chemical substance by exposing an optic fiber having a core and a cladding to the chemical substance so that the chemical substance can be adsorbed onto the surface of the cladding. The optic fiber is coiled inside a container having a pair of valves for controlling the entrance and exit of the substance. Light from a light source is received by one end of the optic fiber, preferably external to the container, and carried by the core of the fiber. Adsorbed substance changes the transmissivity of the fiber as measured by a spectrophotometer at the other end, also preferably external to the container. Hydrogen is detected by the absorption of infrared light carried by an optic fiber with a silica cladding. Since the adsorption is reversible, a sensor according to the present invention can be used repeatedly. Multiple positions in a process system can be monitored using a single container that can be connected to each location to be monitored so that a sample can be obtained for measurement, or, alternatively, containers can be placed near each position and the optic fibers carrying the partially-absorbed light can be multiplexed for rapid sequential reading by a single spectrophotometer.

Buchanan, Bruce R. (1985 Willis, Batesburg, SC 29006); Prather, William S. (2419 Dickey Rd., Augusta, GA 30906)

1992-01-01T23:59:59.000Z

337

Optical high acidity sensor  

DOE Patents (OSTI)

An apparatus and method for determining acid concentrations in solutions having acid concentrations of from about 0.1 Molar to about 16 Molar is disclosed. The apparatus includes a chamber for interrogation of the sample solution, a fiber optic light source for passing light transversely through the chamber, a fiber optic collector for receiving the collimated light after transmission through the chamber, a coating of an acid resistant polymeric composition upon at least one fiber end or lens, the polymeric composition in contact with the sample solution within the chamber and having a detectable response to acid concentrations within the range of from about 0.1 Molar to about 16 Molar, a measurer for the response of the polymeric composition in contact with the sample solution, and, a comparer of the measured response to predetermined standards whereby the acid molarity of the sample solution within the chamber can be determined. Preferably, a first lens is attached to the end of the fiber optic light source, the first lens adapted to collimate light from the fiber optic light source, and a second lens is attached to the end of the fiber optic collector for focusing the collimated light after transmission through the chamber.

Jorgensen, Betty S. (Jemez Springs, NM); Nekimken, Howard L. (Los Alamos, NM); Carey, W. Patrick (Lynnwood, WA); O'Rourke, Patrick E. (Martinez, GA)

1997-01-01T23:59:59.000Z

338

Fiber optic hydrogen sensor  

DOE Patents (OSTI)

Apparatus and method for detecting a chemical substance by exposing an optic fiber having a core and a cladding to the chemical substance so that the chemical substance can be adsorbed onto the surface of the cladding. The optic fiber is coiled inside a container having a pair of valves for controlling the entrance and exit of the substance. Light from a light source is received by one end of the optic fiber, preferably external to the container, and carried by the core of the fiber. Adsorbed substance changes the transmissivity of the fiber as measured by a spectrophotometer at the other end, also preferably external to the container. Hydrogen is detected by the absorption of infrared light carried by an optic fiber with a silica cladding. Since the adsorption is reversible, a sensor according to the present invention can be used repeatedly. Multiple positions in a process system can be monitored using a single container that can be connected to each location to be monitored so that a sample can be obtained for measurement, or, alternatively, containers can be placed near each position and the optic fibers carrying the partially-absorbed light can be multiplexed for rapid sequential reading, by a single spectrophotometer.

Buchanan, B.R.; Prather, W.S.

1991-01-01T23:59:59.000Z

339

Fiber optic hydrogen sensor  

DOE Patents (OSTI)

An apparatus and method are described for detecting a chemical substance by exposing an optic fiber having a core and a cladding to the chemical substance so that the chemical substance can be adsorbed onto the surface of the cladding. The optic fiber is coiled inside a container having a pair of valves for controlling the entrance and exit of the substance. Light from a light source is received by one end of the optic fiber, preferably external to the container, and carried by the core of the fiber. Adsorbed substance changes the transmissivity of the fiber as measured by a spectrophotometer at the other end, also preferably external to the container. Hydrogen is detected by the absorption of infrared light carried by an optic fiber with a silica cladding. Since the adsorption is reversible, a sensor according to the present invention can be used repeatedly. Multiple positions in a process system can be monitored using a single container that can be connected to each location to be monitored so that a sample can be obtained for measurement, or, alternatively, containers can be placed near each position and the optic fibers carrying the partially-absorbed light can be multiplexed for rapid sequential reading by a single spectrophotometer. 4 figs.

Buchanan, B.R.; Prather, W.S.

1992-10-06T23:59:59.000Z

340

Electroforming of Bi(1-x)Sb(x) nanowires for high-efficiency micro-thermoelectric cooling devices on a chip.  

SciTech Connect

Active cooling of electronic systems for space-based and terrestrial National Security missions has demanded use of Stirling, reverse-Brayton, closed Joule-Thompson, pulse tube and more elaborate refrigeration cycles. Such cryocoolers are large systems that are expensive, demand large powers, often contain moving parts and are difficult to integrate with electronic systems. On-chip, solid-state, active cooling would greatly enhance the capabilities of future systems by reducing the size, cost and inefficiencies compared to existing solutions. We proposed to develop the technology for a thermoelectric cooler capable of reaching 77K by replacing bulk thermoelectric materials with arrays of Bi{sub 1-x}Sb{sub x} nanowires. Furthermore, the Sandia-developed technique we will use to produce the oriented nanowires occurs at room temperature and can be applied directly to a silicon substrate. Key obstacles include (1) optimizing the Bi{sub 1-x}Sb{sub x} alloy composition for thermoelectric properties; (2) increasing wire aspect ratios to 3000:1; and (3) increasing the array density to {ge} 10{sup 9} wires/cm{sup 2}. The primary objective of this LDRD was to fabricate and test the thermoelectric properties of arrays of Bi{sub 1-x}Sb{sub x} nanowires. With this proof-of-concept data under our belts we are positioned to engage National Security systems customers to invest in the integration of on-chip thermoelectric coolers for future missions.

Overmyer, Donald L.; Webb, Edmund Blackburn, III (,; ); Siegal, Michael P.; Yelton, William Graham

2006-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient  

SciTech Connect

Sb-doped ZnO (SZO) thin films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system in the absence of oxygen ambient. The electrical, structural, morphological, and elemental properties of SZO thin films were studied for films grown at different substrate temperatures ranging from 200 °C to 600 °C and then annealed in situ at 800 °C under vacuum (pressure ?5 × 10{sup ?8} mbar). Films grown for temperature range of 200–500 °C showed p-type conduction with hole concentration of 1.374 × 10{sup 16} to 5.538 × 10{sup 16} cm{sup ?3}, resistivity of 66.733–12.758 ? cm, and carrier mobility of 4.964–8.846 cm{sup 2} V{sup ?1} s{sup ?1} at room temperature. However, the film grown at 600 °C showed n-type behavior. Additionally, current-voltage (I–V) characteristic of p-ZnO/n-Si heterojunction showed a diode-like behavior, and that further confirmed the p-type conduction in ZnO by Sb doping. X-ray diffraction measurements showed that all SZO films had (002) preferred crystal orientation. X-ray photoelectron spectroscopy analysis confirmed the formation of Sb{sub Zn}–2V{sub Zn} complex caused acceptor-like behavior in SZO films.

Kumar Pandey, Sushil; Kumar Pandey, Saurabh; Awasthi, Vishnu; Kumar, Ashish; Mukherjee, Shaibal [Hybrid Nanodevice Research Group, Discipline of Electrical Engineering, Indian Institute of Technology, Indore 453441 (India)] [Hybrid Nanodevice Research Group, Discipline of Electrical Engineering, Indian Institute of Technology, Indore 453441 (India); Deshpande, Uday P.; Gupta, Mukul [University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore (India)] [University Grants Commission Department of Atomic Energy (UGC DAE) Consortium for Scientific Research, Indore (India)

2013-10-28T23:59:59.000Z

342

Optical quantum memory  

E-Print Network (OSTI)

Quantum memory is important to quantum information processing in many ways: a synchronization device to match various processes within a quantum computer, an identity quantum gate that leaves any state unchanged, and a tool to convert heralded photons to photons-on-demand. In addition to quantum computing, quantum memory would be instrumental for the implementation of long-distance quantum communication using quantum repeaters. The importance of this basic quantum gate is exemplified by the multitude of optical quantum memory mechanisms being studied: optical delay lines, cavities, electromagnetically-induced transparency, photon-echo, and off-resonant Faraday interaction. Here we report on the state-of-the-art in the field of optical quantum memory, including criteria for successful quantum memory and current performance levels.

A. I. Lvovsky; B. C. Sanders; W. Tittel

2010-02-24T23:59:59.000Z

343

Optical dichroism in nanotubes  

Science Journals Connector (OSTI)

Utilizing the line-group symmetry of single-wall nanotubes, we have assigned their electron-energy bands by symmetry-based quantum numbers. The selection rules for optical absorption are presented in terms of these quantum numbers. Different interband transitions become allowed as the polarization of incident light is varied, and we predict a substantial optical dichroism. We suggest how to observe this effect in experiments on a single nanotube, and how it can be used to control quantum transport in nanotubes to obtain information about the structure.

I. Božovi?; N. Božovi?; M. Damnjanovi?

2000-09-15T23:59:59.000Z

344

Solid state optical microscope  

DOE Patents (OSTI)

A solid state optical microscope wherein wide-field and high-resolution images of an object are produced at a rapid rate by utilizing conventional optics with a charge-coupled photodiode array. A galvanometer scanning mirror, for scanning in one of two orthogonal directions is provided, while the charge-coupled photodiode array scans in the other orthogonal direction. Illumination light from the object is incident upon the photodiodes, creating packets of electrons (signals) which are representative of the illuminated object. The signals are then processed, stored in a memory, and finally displayed as a video signal. 2 figs.

Young, I.T.

1983-08-09T23:59:59.000Z

345

Solid state optical microscope  

DOE Patents (OSTI)

A solid state optical microscope wherein wide-field and high-resolution images of an object are produced at a rapid rate by utilizing conventional optics with a charge-coupled photodiode array. A galvanometer scanning mirror, for scanning in one of two orthogonal directions is provided, while the charge-coupled photodiode array scans in the other orthogonal direction. Illumination light from the object is incident upon the photodiodes, creating packets of electrons (signals) which are representative of the illuminated object. The signals are then processed, stored in a memory, and finally displayed as a video signal.

Young, Ian T. (Pleasanton, CA)

1983-01-01T23:59:59.000Z

346

Full spectrum optical safeguard  

DOE Patents (OSTI)

An optical safeguard device with two linear variable Fabry-Perot filters aligned relative to a light source with at least one of the filters having a nonlinear dielectric constant material such that, when a light source produces a sufficiently high intensity light, the light alters the characteristics of the nonlinear dielectric constant material to reduce the intensity of light impacting a connected optical sensor. The device can be incorporated into an imaging system on a moving platform, such as an aircraft or satellite.

Ackerman, Mark R. (Albuquerque, NM)

2008-12-02T23:59:59.000Z

347

Neutron diffraction studies on the Heusler alloy Ni{sub 50}Mn{sub 37}Sb{sub 13}  

SciTech Connect

The evolution of martensitic to austenitic transformation in Ni{sub 50}Mn{sub 37}Sb{sub 13} has been studied usingtemperature dependent neutron diffraction, thermal property, and magnetization studies. Differential scanning calorimetric studies reveal a martensitic transformation T{sub M} around 291 K. The magnetization data yield a ferromagnetic ordering temperature of 329 K in the austenitic phase and 230 K in the martensitic phase. The analysis of the powder neutron diffraction data in the temperature range of 325-12 K indicates a structural transition from a high temperature cubic L2{sub 1} type structure to an orthorhombic structure. At 270 K, both cubic and orthorhombic phases coexist. Anisotropic unit cell changes are observed at the martensitic transformation: The unit cell expands by about 1.5% along the a axis, by about 2.5% along the c axis, and compresses by about 4.28% along the b axis. Both cubic and orthorhombic phases show commensurate collinear ferromagnetic ordering with a magnetic moment of {approx}3.67 {mu}{sub B}/Mn in Mn (2a and 2f) sites.

Rama Rao, N. V.; Chelvane, J. Arout; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Hyderabad 500 058 (India); Morozkin, A. V. [Department of Chemistry, Moscow Lomonosov State University, Moscow 119992 (Russian Federation); Lamsal, J. [Department of Physics and Astronomy, University of Missouri-Columbia, Columbia, Missouri 65211 (United States); Yelon, W. B. [Materials Research Center and Department of Chemistry, Missouri University of Science and Technology, Rolla, Missouri 65409 (United States); Nirmala, R. [Department of Physics, Indian Institute of Technology Madras, Chennai 600 036 (India); Suresh, K. G. [Department of Physics, Indian Institute of Technology Bombay, Mumbai 400 076 (India); Malik, S. K. [International Institute of Physics (IIP)-UFRN, Natal, 59072-970 (Brazil)

2011-04-01T23:59:59.000Z

348

Enhancement of thermoelectric properties of CoSb3-based skutterudites by double filling of Tl and In  

Science Journals Connector (OSTI)

Thermoelectric (TE) generators can directly generate electrical power from waste heat and thus could be an important part of the solution to future power supply and sustainable energy management. The main obstacle to the widespread use of TE materials in diverse industries e.g. for exhaust heat recovery in automobiles is their low efficiency in converting heat to electricity. The conversion efficiency of TE materials is quantified by the dimensionless figure of merit ZT and the way to enhance ZT is to decrease the lattice thermal conductivity (?lat ) of the material while maintaining a high electrical conductivity i.e. to create a situation in which phonons are scattered but electrons are unaffected. Here we report skutterudites filled by Tl and In Tl0.1In x Co4Sb12 which allow a dramatic reduction of ?lat yielding a ZT of 1.2 at 700?K. We demonstrate that the reduction of ?lat is due to the effective phonon scattering induced both by the rattling of Tl and In and by the naturally formed In2O3nanoparticles (<50?nm). The combined approach of double filling and self-formed nanostructures might be applicable to various clathrate compounds. Thus our results point to a new strategy in the improvement of bulk TE materials.

Adul Harnwunggmoung; Ken Kurosaki; Atsuko Kosuga; Manabu Ishimaru; Theerayuth Plirdpring; Rattikorn Yimnirun; Jaru Jutimoosik; Saroj Rujirawat; Yuji Ohishi; Hiroaki Muta; Shinsuke Yamanaka

2012-01-01T23:59:59.000Z

349

High-index-contrast electromechanical optical switches  

E-Print Network (OSTI)

System developers are looking to replace protocol-dependent, bandwidth-limited optical networks with intelligent optically-transparent integrated photonic networks. Several electromechanical optical switches are explored ...

Bryant, Reginald (Reginald Eugene), 1978-

2011-01-01T23:59:59.000Z

350

2.71 Optics, Fall 2001  

E-Print Network (OSTI)

Introduction to optical science with elementary engineering applications. Geometrical optics: ray-tracing, aberrations, lens design, apertures and stops, radiometry and photometry. Wave optics: basic electrodynamics, ...

Barbastathis, George

351

Multi-Scale Optical Coherence Tomography Imaging  

E-Print Network (OSTI)

Fourier domain optical coherence tomography and methods forspeed spectral-domain optical coherence tomography at 1.3umJ. G. (1991). Optical coherence tomography. Science, 254(

Oliveira, Michael

2014-01-01T23:59:59.000Z

352

Integrated optics and new wave phenomena in optical waveguides  

Science Journals Connector (OSTI)

Research in integrated optics has two goals: One is to apply thin-film technology to the formation of optical devices and circuits. The other is the integration of a large number of optical devices on a small substrate, so forming an optical circuit reminiscent of the integrated circuit in microelectronics. The result is a new breed of optical devices in the form of miniature optical waveguides. They include lasers, modulators, switches, detectors, prisms, lenses, and polarizers, and many of them have efficiencies better than their bulk counterparts. Simple integrated optical circuits have also been constructed, and rapidly advancing semiconductor technology indicates that monolithic integrated optical circuits can readily be developed using GaAs-related compounds. In this paper, we review the state-of-the-art of integrated optics and explore new wave phenomena in optical circuits. The specific topics to be discussed are: light-wave couplers and m-line spectroscopy, refraction and reflection of light in thin films, normal modes of the uniform, the graded and the metal-clad waveguides, optics in tapered films, theory of corrugated waveguides, and more importantly, physics of various thin-film optical devices and the method of the circuit formation.

P. K. Tien

1977-04-01T23:59:59.000Z

353

Bachelor of Science Degree in Optics Bachelor of Science Degree in Optical Engineering  

E-Print Network (OSTI)

Bachelor of Science Degree in Optics Bachelor of Science Degree in Optical Engineering The Institute of Optics Major Requirements OPT 201 Geometrical Optics Lab (2 cr.) OPT 202 Physical Optics Lab (2 Theory of Optics OPT 225 Optical Sources and Detectors OPT 241 Geometrical Optics OPT 242 Aberrations

354

Bachelor of Science Degree in Optics Bachelor of Science Degree in Optical Engineering  

E-Print Network (OSTI)

Bachelor of Science Degree in Optics Bachelor of Science Degree in Optical Engineering The Institute of Optics Major Requirements OPT 197 Geometrical Optics Lab (2 cr.) OPT 198 Physical Optics Lab (2 Theory of Optics OPT 225 Optical Sources and Detectors OPT 241 Geometrical Optics OPT 242 Aberrations

Mahon, Bradford Z.

355

High throughput optical scanner  

DOE Patents (OSTI)

A scanning apparatus is provided to obtain automated, rapid and sensitive scanning of substrate fluorescence, optical density or phosphorescence. The scanner uses a constant path length optical train, which enables the combination of a moving beam for high speed scanning with phase-sensitive detection for noise reduction, comprising a light source, a scanning mirror to receive light from the light source and sweep it across a steering mirror, a steering mirror to receive light from the scanning mirror and reflect it to the substrate, whereby it is swept across the substrate along a scan arc, and a photodetector to receive emitted or scattered light from the substrate, wherein the optical path length from the light source to the photodetector is substantially constant throughout the sweep across the substrate. The optical train can further include a waveguide or mirror to collect emitted or scattered light from the substrate and direct it to the photodetector. For phase-sensitive detection the light source is intensity modulated and the detector is connected to phase-sensitive detection electronics. A scanner using a substrate translator is also provided. For two dimensional imaging the substrate is translated in one dimension while the scanning mirror scans the beam in a second dimension. For a high throughput scanner, stacks of substrates are loaded onto a conveyor belt from a tray feeder.

Basiji, David A. (Seattle, WA); van den Engh, Gerrit J. (Seattle, WA)

2001-01-01T23:59:59.000Z

356

Split image optical display  

DOE Patents (OSTI)

A video image is displayed from an optical panel by splitting the image into a plurality of image components, and then projecting the image components through corresponding portions of the panel to collectively form the image. Depth of the display is correspondingly reduced.

Veligdan, James T. (Manorville, NY)

2007-05-29T23:59:59.000Z

357

Quantum Optics (Nir Davidson -  

E-Print Network (OSTI)

Capacity and Cost Effectiveness Enhancment Technique Using a Combined Time Division and Multilevel California, USA, "Advanced System Functions in Optical Communications Using E-O Technologies" Moshe Nazarathy for fabricating printed circuit boards" Solar Cells (Jeffrey Gordon, Uzi Efron - Ben- Gurion University) David

Ribak, Erez

358

Glass for Optical Purposes  

Science Journals Connector (OSTI)

... THE importance of an adequate supply of optical glass of all the principal types cannot be overestimated. The improvement of the microscope has ... improvement of the microscope has been and is still retarded for the want of suitable glasses, the construction of large telescopes is limited by the capacity of the glassmaker to ...

S. D. CHALMERS

1914-10-01T23:59:59.000Z

359

Optical pumping of ions  

Science Journals Connector (OSTI)

Radiofrequency spectroscopy has been extended to positive ions with S ground states by means of optical pumping. The ions are stored in buffer gases or ion traps and are polarized directly by optical pumping or indirectly by spin exchange, change exchange, or Penning ionization with optically pumped atoms. The applied methods are described. The experiments can be divided into two categories: Collisional interactions of the polarized ions are investigated, like the exchange processes mentioned above, spin exchange with free electrons, spin depolarization and hyperfine density shifts in rare gases. For the two latter effects drastic differences are observed between atomic and ionic 2S12 states the explanations of which reveal the influence of the ionic charge on the interactions. The comparison of equivalent processes involving isoelectronic 2S or 2P configurations of atoms and ions provides a test of current collision theories. Precision rf spectroscopy of ionic ground states yields the 2S12 hyperfine structure splittings of 3He+ and group II ions with relative accuracies of up to 10?9, with further improvement possible. Direct and indirect optical pumping of 1S0 ions is used to determine nuclear magnetic moments, diamagnetic shielding coefficients, and chemical shifts. Applications and further developments of the present methods are discussed.

E.W. Weber

1977-01-01T23:59:59.000Z

360

Optical imaging of Rydberg atoms  

E-Print Network (OSTI)

We present an experiment exploring electromagnetically induced transparency (EIT) in Rydberg atoms in order to observe optical nonlinearities at the single photon level. ??Rb atoms are trapped and cooled using a magneto-optical ...

Mazurenko, Anton

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Miniature MT optical assembly (MMTOA)  

DOE Patents (OSTI)

An optical assembly (10) includes a rigid mount (12) with a recess (26) proximate a first side thereof, a substrate (14), and an optical die (16) flip-chip bonded to the substrate (14). The substrate (14) is secured to the first side of the mount and includes a plurality of die bonding elements (40), a plurality of optical apertures (32), and a plurality of external bonding elements (42). A plurality of traces (44) interconnect the die bonding elements (40) and the external bonding elements (42). The optical die (16) includes a plurality of optical elements, each element including an optical signal interface (48), the die being bonded to the plurality of die bonding elements (40) such that the optical signal interface (48) of each element is in registry with an optical aperture (32) of the substrate (14) and the die (16) is at least partially enclosed by the recess (26).

Laughlin, Daric (Overland Park, KS); Abel, Phillip (Overland Park, KS)

2008-04-01T23:59:59.000Z

362

Science, Optics and You Guidebook  

NLE Websites -- All DOE Office Websites (Extended Search)

- i - INTRODUCTION WHAT IS SCIENCE, 0PTICS & YOU? The Science, Optics and You Guidebook is made up as follows: Science, Optics and You is a standards-based interdisciplinary...

363

Science, Optics and You: Introduction  

NLE Websites -- All DOE Office Websites (Extended Search)

- i - INTRODUCTION WHAT IS SCIENCE, 0PTICS & YOU? The Science, Optics and You Guidebook is made up as follows: Science, Optics and You is a standards-based interdisciplinary...

364

Crooker named Optical Society Fellow  

NLE Websites -- All DOE Office Websites (Extended Search)

Crooker named Optical Society Fellow January 23, 2014 Scott Crooker of LANL's Condensed Matter and Magnet Science group is a 2014 Fellow of the Optical Society (OSA). The Society...

365

Large core fiber optic cleaver  

DOE Patents (OSTI)

The present invention relates to a device and method for cleaving optical fibers which yields cleaved optical fiber ends possessing high damage threshold surfaces. The device can be used to cleave optical fibers with core diameters greater than 400 {micro}m. 30 figs.

Halpin, J.M.

1996-03-26T23:59:59.000Z

366

Optical computing Damien Woods a  

E-Print Network (OSTI)

Optical computing Damien Woods a aDepartment of Computer Science and Artificial Intelligence Institute, Vierimaantie 5, 84100 Ylivieska, Finland Abstract We consider optical computers that encode data using images and compute by transforming such images. We give an overview of a number of such optical

Woods, Damien

367

Nonlinear optics at maximum coherence  

Science Journals Connector (OSTI)

...D. Walls Nonlinear optics at maximum coherence S. E. Harris G. Y. Yin M. Jain H...optical processes which utilize maximum coherence of a non-allowed transition. The nonlinear...frequency. Nonlinear optics at maximum coherence B y S. E. Harris, G. Y. Yin, M...

1997-01-01T23:59:59.000Z

368

Aerogel-clad optical fiber  

DOE Patents (OSTI)

An optical fiber is surrounded by an aerogel cladding. For a low density aerogel, the index of refraction of the aerogel is close to that of air, which provides a high numerical aperture to the optical fiber. Due to the high numerical aperture, the aerogel clad optical fiber has improved light collection efficiency.

Sprehn, Gregory A. (Livermore, CA); Hrubesh, Lawrence W. (Pleasanton, CA); Poco, John F. (Livermore, CA); Sandler, Pamela H. (San Marino, CA)

1997-01-01T23:59:59.000Z

369

Optical Tweezer Arrays and Optical Substrates Created with Diffractive Optics Eric R. Dufresne and David G. Grier  

E-Print Network (OSTI)

Optical Tweezer Arrays and Optical Substrates Created with Diffractive Optics Eric R. Dufresne optical tweezers from a single laser beam using diffractive optical elements. As a demonstration of this technique, we have implemented a 4 \\Theta 4 square array of optical tweezers -- the hexadeca

Grier, David

370

Bonded, walk-off compensated optical elements  

DOE Patents (OSTI)

A bonded, walk-off compensated crystal, for use with optical equipment, and methods of making optical components including same.

Ebbers, Christopher A. (Livermore, CA)

2003-04-08T23:59:59.000Z

371

THE IMPACT OF A TANK 40H DECANT ON THE PROJECTED OPERATING WINDOWS FOR SB4 AND GLASS SELECTION STRATEGY IN SUPPORT OF THE VARIABILITY STUDY  

SciTech Connect

The Liquid Waste Organization (LWO) has requested that the Savannah River National Laboratory (SRNL) to assess the impact of a 100K gallon decant volume from Tank 40H on the existing sludge-only Sludge Batch 4 (SB4)-Frit 510 flowsheet and the coupled operations flowsheet (SB4 with the Actinide Removal Process (ARP)). Another potential SB4 flowsheet modification of interest includes the addition of 3 wt% sodium (on a calcined oxide basis) to a decanted sludge-only or coupled operations flowsheet. These potential SB4 flowsheet modifications could result in significant compositional shifts to the SB4 system. This paper study provides an assessment of the impact of these compositional changes to the projected glass operating windows and to the variability study for the Frit 510-SB4 system. The influence of the compositional changes on melt rate was not assessed in this study nor was it requested. Nominal Stage paper study assessments were completed using the projected compositions for the various flowsheet options coupled with Frit 510 (i.e., variation was not applied to the sludge and frit compositions). In order to gain insight into the impacts of sludge variation and/or frit variation (due to the procurement specifications) on the projected operating windows, three versions of the Variation Stage assessment were performed: (1) the traditional Variation Stage assessment in which the nominal Frit 510 composition was coupled with the extreme vertices (EVs) of each sludge, (2) an assessment of the impact of possible frit variation (within the accepted frit specification tolerances) on each nominal SB4 option, and (3) an assessment of the impact of possible variation in the Frit 510 composition due to the vendor's acceptance specifications coupled with the EVs of each sludge case. The results of the Nominal Stage assessment indicate very little difference among the various flowsheet options. All of the flowsheets provide DWPF with the possibility of targeting waste loadings (WLs) from the low 30s to the low 40s with Frit 510. In general, the Tank 40H decant has a slight negative impact on the operating window, but DWPF still has the ability to target current WLs (34%) and higher WLs if needed. While the decant does not affect practical WL targets in DWPF, melt rate could be reduced due to the lower Na{sub 2}O content. If true, the addition of 3 wt% Na{sub 2}O to the glass system may regain melt rate, assuming that the source of alkali is independent of the impact on melt rate. Coupled operations with Frit 510 via the addition of ARP to the decanted SB4 flowsheet also appears to be viable based on the projected operating windows. The addition of both ARP and 3 wt% Na{sub 2}O to a decanted Tank 40H sludge may be problematic using Frit 510. Although the Nominal Stage assessments provide reasonable operating windows for the SB4 flowsheets being considered with Frit 510, introduction of potential sludge and/or frit compositional variation does have a negative impact. The magnitude of the impact on the projected operating windows is dependent on the specific flowsheet options as well as the applied variation. The results of the traditional Variation Stage assessments indicate that the three proposed Tank 40H decanted flowsheet options (Case No.2--100K gallon decant, Case No.3--100K gallon decant and 3 wt% Na{sub 2}O addition and Case No.4--100K gallon decant and ARP) demonstrate a relatively high degree of robustness to possible sludge variation over WLs of interest with Frit 510. However, the case where the addition of both ARP and 3 wt% Na{sub 2}O is considered was problematic during the traditional Variation Stage assessment. The impact of coupling the frit specifications with the nominal SB4 flowsheet options on the projected operating windows is highly dependent on whether the upper WLs are low viscosity or liquidus temperature limited in the Nominal Stage assessments. Systems that are liquidus temperature limited exhibit a high degree of robustness to the applied frit and sludge variation, while those that are low viscosity li

Raszewski, F; Tommy Edwards, T; David Peeler, D

2008-02-07T23:59:59.000Z

372

Large optics inspection, tilting, and washing stand  

DOE Patents (OSTI)

A large optics stand provides a risk free means of safely tilting large optics with ease and a method of safely tilting large optics with ease. The optics are supported in the horizontal position by pads. In the vertical plane the optics are supported by saddles that evenly distribute the optics weight over a large area.

Ayers, Marion Jay (Brentwood, CA); Ayers, Shannon Lee (Brentwood, CA)

2010-08-24T23:59:59.000Z

373

Optical Network Testbeds Workshop  

SciTech Connect

This is the summary report of the third annual Optical Networking Testbed Workshop (ONT3), which brought together leading members of the international advanced research community to address major challenges in creating next generation communication services and technologies. Networking research and development (R&D) communities throughout the world continue to discover new methods and technologies that are enabling breakthroughs in advanced communications. These discoveries are keystones for building the foundation of the future economy, which requires the sophisticated management of extremely large qualities of digital information through high performance communications. This innovation is made possible by basic research and experiments within laboratories and on specialized testbeds. Initial network research and development initiatives are driven by diverse motives, including attempts to solve existing complex problems, the desire to create powerful new technologies that do not exist using traditional methods, and the need to create tools to address specific challenges, including those mandated by large scale science or government agency mission agendas. Many new discoveries related to communications technologies transition to wide-spread deployment through standards organizations and commercialization. These transition paths allow for new communications capabilities that drive many sectors of the digital economy. In the last few years, networking R&D has increasingly focused on advancing multiple new capabilities enabled by next generation optical networking. Both US Federal networking R&D and other national R&D initiatives, such as those organized by the National Institute of Information and Communications Technology (NICT) of Japan are creating optical networking technologies that allow for new, powerful communication services. Among the most promising services are those based on new types of multi-service or hybrid networks, which use new optical networking technologies. Several years ago, when many of these optical networking research topics were first being investigated, they were the subject of controversial debate. The new techniques challenged many long-held concepts related to architecture and technology. However, today all major networking organizations are transitioning toward infrastructure that incorporates these new concepts. This progress has been assisted through the series of Optical Networking Testbed Workshops (ONT). The first (ONT1) outlined a general framework of key issues and topics and developed a series of recommendations (www.nren.nasa.gov/workshop7). The second (ONT2) developed a common vision of optical network technologies, services, infrastructure, and organizations (www.nren.nasa.gov/workshop8). Processes that allow for a common vision encourage widespread deployment of these types of resources among advanced networking communities. Also, such a shared vision enables key concepts and technologies to migrate from basic research testbeds to wider networking communities. The ONT-3 workshop built on these earlier activities by expanding discussion to include additional considerations of the international interoperability and of greater impact of optical networking technology on networking in general. In accordance with this recognition, the workshop confirmed that future-oriented research and development is indispensable to fundamentally change the current Internet architecture to create a global network incorporating completely new concepts. The workshop also recognized that the first priority to allow for this progress is basic research and development, including international collaborative activities, which are important for the global realization of interoperability of a new generation architecture.

Joe Mambretti

2007-06-01T23:59:59.000Z

374

Modular optical detector system  

DOE Patents (OSTI)

A modular optical detector system. The detector system is designed to detect the presence of molecules or molecular species by inducing fluorescence with exciting radiation and detecting the emitted fluorescence. Because the system is capable of accurately detecting and measuring picomolar concentrations it is ideally suited for use with microchemical analysis systems generally and capillary chromatographic systems in particular. By employing a modular design, the detector system provides both the ability to replace various elements of the detector system without requiring extensive realignment or recalibration of the components as well as minimal user interaction with the system. In addition, the modular concept provides for the use and addition of a wide variety of components, including optical elements (lenses and filters), light sources, and detection means, to fit particular needs.

Horn, Brent A. (Livermore, CA); Renzi, Ronald F. (Tracy, CA)

2006-02-14T23:59:59.000Z

375

LSST Camera Optics  

SciTech Connect

The Large Synoptic Survey Telescope (LSST) is a unique, three-mirror, modified Paul-Baker design with an 8.4m primary, a 3.4m secondary, and a 5.0m tertiary feeding a camera system that includes corrector optics to produce a 3.5 degree field of view with excellent image quality (<0.3 arcsecond 80% encircled diffracted energy) over the entire field from blue to near infra-red wavelengths. We describe the design of the LSST camera optics, consisting of three refractive lenses with diameters of 1.6m, 1.0m and 0.7m, along with a set of interchangeable, broad-band, interference filters with diameters of 0.75m. We also describe current plans for fabricating, coating, mounting and testing these lenses and filters.

Olivier, S S; Seppala, L; Gilmore, K; Hale, L; Whistler, W

2006-06-05T23:59:59.000Z

376

Fiber optic moisture sensor  

DOE Patents (OSTI)

A method and apparatus for sensing moisture changes by utilizing optical fiber technology. One embodiment uses a reflective target at the end of an optical fiber. The reflectance of the target varies with its moisture content and can be detected by a remote unit at the opposite end of the fiber. A second embodiment utilizes changes in light loss along the fiber length. This can be attributed to changes in reflectance of cladding material as a function of its moisture content. It can also be affected by holes or inserts interposed in the cladding material and/or fiber. Changing light levels can also be coupled from one fiber to another in an assembly of fibers as a function of varying moisture content in their overlapping lengths of cladding material.

Kirkham, R.R.

1984-08-03T23:59:59.000Z

377

Existence of Optical Vortices  

E-Print Network (OSTI)

Optical vortices arise as phase singularities of the light fields and are of central interest in modern optical physics. In this paper, some existence theorems are established for stationary vortex wave solutions of a general class of nonlinear Schr\\"{o}dinger equations. There are two types of results. The first type concerns the existence of positive-radial-profile solutions which are obtained through a constrained minimization approach. The second type addresses the existence of saddle-point solutions through a mountain-pass-theorem or min-max method so that the wave propagation constant may be arbitrarily prescribed in an open interval. Furthermore some explicit estimates for the lower bound and sign of the wave propagation constant with respect to the light beam power and vortex winding number are also derived for the first type solutions.

Yisong Yang; Ruifeng Zhang

2012-09-21T23:59:59.000Z

378

Structure and properties of Na{sub x}M{sub 2}SbO{sub 6}·yH{sub 2}O, M=Co(III), Ni(III) honeycomb oxyhydrates  

SciTech Connect

The oxyhydrates Na{sub 0.85}Co{sub 2}SbO{sub 6}·1.7H{sub 2}O and Na{sub 0.95}Ni{sub 2}SbO{sub 6}·1.5H{sub 2}O were prepared by Br{sub 2} oxidation of Na{sub 3}Co{sub 2}SbO{sub 6} and Na{sub 3}Ni{sub 2}SbO{sub 6} and exposure to ambient air. Their composition and structure are characterized by thermogravimetric analysis, elemental analysis and powder X-ray diffraction. Both form monolayer hydrates with metal cations (Co or Ni) near the 3+ oxidation state. In the parent materials, MO{sub 6} octahedra surround SbO{sub 6} units, forming a honeycomb geometry; Rietveld refinement of the hydrate phases indicate that this motif is retained. Magnetic susceptibility plots display paramagnetic behavior and Curie–Weiss fits support the 3+ oxidation state (low spin d{sup 6}s=0 for Co and low spin d{sup 7}s=1/2 for Ni). Close inspection of the Ni hydrate’s susceptibility reveals a feature at 6.2 K and a non-linear magnetization at 2 K with no saturation up to 9 T. Heat capacity measurements show a large amount of excess entropy in the Ni hydrate in the 2–20 K temperature range, while the heat capacity of the Co hydrate can be described by a simple lattice contribution. The Ni hydrate sample is easily dehydrated by heating above 100 °C and forms a new Na-deficient phase, Na{sub 0.95}Ni{sub 2}SbO{sub 6}, which is stable at room temperature. Magnetic susceptibility of this phase is consistent with the Ni atom remaining in the 3+ oxidation state after dehydration. - Graphical abstract: Powder diffraction patterns of Na{sub 3}Ni{sub 2}SbO{sub 6}, Na{sub 0.95}Ni{sub 2}SbO{sub 6}·1.5H{sub 2}O and Na{sub 0.95}Ni{sub 2}SbO{sub 6}. Each pattern has been normalized in intensity. Cartoons depict the change in layer separation with hydration and give the approximate distances between layers and Ni atoms. Highlights: • New oxyhydrate phases with honeycomb lattices are formed. • Curie–Weiss fits indicate Ni{sup 3+} (s=1/2). • Heat capacity shows a large release of entropy for Ni phase, likely due to a complex magneto-structural phase transition.

Roudebush, J.H., E-mail: jhr@princeton.edu; Cava, R.J.

2013-08-15T23:59:59.000Z

379

MicroSight Optics  

SciTech Connect

MicroSight is an innovative gunsight technology that allows a marksman's eye to focus on both the front gunsight and the intended target. The MicroSight improves both firearm safety and performance by imaging two objects at different focal distances. The MicroSight was developed at Idaho National Laboratory, and has been licensed by Apollo Optical Systems. You can learn more about INL's research programs at http://www.facebook.com/idahonationallaboratory.

None

2010-01-01T23:59:59.000Z

380

Optically pulsed electron accelerator  

DOE Patents (OSTI)

An optically pulsed electron accelerator can be used as an injector for a free electron laser and comprises a pulsed light source, such as a laser, for providing discrete incident light pulses. A photoemissive electron source emits electron bursts having the same duration as the incident light pulses when impinged upon by same. The photoemissive electron source is located on an inside wall of a radiofrequency-powered accelerator cell which accelerates the electron burst emitted by the photoemissive electron source.

Fraser, J.S.; Sheffield, R.L.

1985-05-20T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Fourier optics on graphene  

Science Journals Connector (OSTI)

Using numerical simulations, here, we demonstrate that a single sheet of graphene with properly designed inhomogeneous, nonuniform conductivity distributions can act as a convex lens for focusing and collimating the transverse-magnetic (TM) surface plasmon polariton (SPP) surface waves propagating along the graphene. Consequently, we show that the graphene can act as a platform for obtaining spatial Fourier transform of infrared (IR) SPP signals. This may lead to rebirth of the field of Fourier optics on a 1-atom-thick structure.

Ashkan Vakil and Nader Engheta

2012-02-27T23:59:59.000Z

382

Optically Controlled Jitter Generator  

E-Print Network (OSTI)

A new simple circuit producing random pulse trains is proposed and experimentally studied. The circuit is composed of an operational amplifier and two feedback links, one of which comprises two photodiodes. The photodiodes are responsible for nonlinearity in the feedback. By varying the illumination it is possible to control the nonlinearity in the photodiode current-voltage characteristics and change the degree of randomness in the oscillations. The circuit's simplicity and optical control make it attractive for coupled map lattices.

Julia Manasson; V. A. Manasson

2006-08-17T23:59:59.000Z

383

Fiber optic geophysical sensors  

DOE Patents (OSTI)

A fiber optic geophysical sensor in which laser light is passed through a sensor interferometer in contact with a geophysical event, and a reference interferometer not in contact with the geophysical event but in the same general environment as the sensor interferometer. In one embodiment, a single tunable laser provides the laser light. In another embodiment, separate tunable lasers are used for the sensor and reference interferometers. The invention can find such uses as monitoring for earthquakes, and the weighing of objects.

Homuth, Emil F. (Los Alamos, NM)

1991-01-01T23:59:59.000Z

384

Optically pulsed electron accelerator  

DOE Patents (OSTI)

An optically pulsed electron accelerator can be used as an injector for a free electron laser and comprises a pulsed light source, such as a laser, for providing discrete incident light pulses. A photoemissive electron source emits electron bursts having the same duration as the incident light pulses when impinged upon by same. The photoemissive electron source is located on an inside wall of a radio frequency powered accelerator cell which accelerates the electron burst emitted by the photoemissive electron source.

Fraser, John S. (Los Alamos, NM); Sheffield, Richard L. (Los Alamos, NM)

1987-01-01T23:59:59.000Z

385

MicroSight Optics  

ScienceCinema (OSTI)

MicroSight is an innovative gunsight technology that allows a marksman's eye to focus on both the front gunsight and the intended target. The MicroSight improves both firearm safety and performance by imaging two objects at different focal distances. The MicroSight was developed at Idaho National Laboratory, and has been licensed by Apollo Optical Systems. You can learn more about INL's research programs at http://www.facebook.com/idahonationallaboratory.

None

2013-05-28T23:59:59.000Z

386

Optical fiber inspection system  

DOE Patents (OSTI)

A remote optical inspection system including an inspection head. The inspection head has a passageway through which pellets or other objects are passed. A window is provided along the passageway through which light is beamed against the objects being inspected. A plurality of lens assemblies are arranged about the window so that reflected light can be gathered and transferred to a plurality of coherent optical fiber light guides. The light guides transfer the light images to a television or other image transducer which converts the optical images into a representative electronic signal. The electronic signal can then be displayed on a signal viewer such as a television monitor for inspection by a person. A staging means can be used to support the objects for viewing through the window. Routing means can be used to direct inspected objects into appropriate exit passages for accepted or rejected objects. The inspected objects are advantageously fed in a singular manner to the staging means and routing means. The inspection system is advantageously used in an enclosure when toxic or hazardous materials are being inspected. 10 figs.

Moore, F.W.

1985-04-05T23:59:59.000Z

387

Virtual Optical Comparator  

SciTech Connect

The Virtual Optical Comparator, VOC, was conceived as a result of the limitations of conventional optical comparators and vision systems. Piece part designs for mechanisms have started to include precision features on the face of parts that must be viewed using a reflected image rather than a profile shadow. The VOC concept uses a computer generated overlay and a digital camera to measure features on a video screen. The advantage of this system is superior edge detection compared to traditional systems. No vinyl charts are procured or inspected. The part size and expensive fixtures are no longer a concern because of the range of the X-Y table of the Virtual Optical Comparator. Product redesigns require only changes to the CAD image overlays; new vinyl charts are not required. The inspection process is more ergonomic by allowing the operator to view the part sitting at a desk rather than standing over a 30 inch screen. The procurement cost for the VOC will be less than a traditional comparator with a much smaller footprint with less maintenance and energy requirements.

Thompson, Greg

2008-10-20T23:59:59.000Z

388

Optical ionization detector  

DOE Patents (OSTI)

An optical ionization detector wherein a beam of light is split so that one arm passes through a fiber optics and the other arm passes through a gas-filled region, and uses interferometry to detect density changes in a gas when charged particles pass through it. The gas-filled region of the detector is subjected to a high electric field and as a charged particle traverses this gas region electrons are freed from the cathode and accelerated so as to generate an electron avalanche which is collected on the anode. The gas density is effected by the electron avalanche formation and if the index or refraction is proportional to the gas density the index will change accordingly. The detector uses this index change by modulating the one arm of the split light beam passing through the gas, with respect to the other arm that is passed through the fiber optic. Upon recombining of the beams, interference fringe changes as a function of the index change indicates the passage of charged particles through the gaseous medium. 3 figures.

Wuest, C.R.; Lowry, M.E.

1994-03-29T23:59:59.000Z

389

Optical ionization detector  

DOE Patents (OSTI)

An optical ionization detector wherein a beam of light is split so that one arm passes through a fiber optics and the other arm passes through a gas-filled region, and uses interferometry to detect density changes in a gas when charged particles pass through it. The gas-filled region of the detector is subjected to a high electric field and as a charged particle traverses this gas region electrons are freed from the cathode and accelerated so as to generate an electron avalanche which is collected on the anode. The gas density is effected by the electron avalanche formation and if the index or refraction is proportional to the gas density the index will change accordingly. The detector uses this index change by modulating the one arm of the split light beam passing through the gas, with respect to the other arm that is passed through the fiber optic. Upon recombining of the beams, interference fringe changes as a function of the index change indicates the passage of charged particles through the gaseous medium.

Wuest, Craig R. (Danville, CA); Lowry, Mark E. (Castro Valley, CA)

1994-01-01T23:59:59.000Z

390

Optical Microscopy and 4Optical Microscopy and 4 Pi MicroscopyPi Microscopy  

E-Print Network (OSTI)

Optical Microscopy and 4Optical Microscopy and 4 Pi MicroscopyPi Microscopy Carolyn A. SuttonCarolyn A. Sutton PH 464PH 464 #12;OverviewOverview The OpticalThe Optical MicroscopeMicroscopy 4 Pi Microscopy4 Pi Microscopy Optical Microscope for Metallography #12;Optical Microscope: OriginsOptical

La Rosa, Andres H.

391

An optical fan for light beams for high-precision optical measurements and optical switching  

E-Print Network (OSTI)

The polarization and orbital angular momentum properties of light are of great importance in optical science and technology in the fields of high precision optical measurements and high capacity and high speed optical communications. Here we show, a totally new method, based on a combination of these two properties and using the thermal dispersion and electro-optical effect of birefringent crystals, the construction of a simple and robust scheme to rotate a light beam like a fan. Using a computer-based digital image processing technique, we determine the temperature and the thermal dispersion difference of the crystal with high resolution. We also use the rotation phenomenon to realize thermo-optic and electro-optic switches. The basic operating principles for measurement and switching processes are presented in detail. The methods developed here will have wide practical applicability in various fields, including remote sensing, materials science and optical communication networks.

Zhou, Zhi-Yuan; Ding, Dong-Sheng; Jiang, Yun-Kun; Zhang, Wei; Shi, Shuai; Shi, Bao-Sen; Guo, Guang-Can

2014-01-01T23:59:59.000Z

392

An optical fan for light beams for high-precision optical measurements and optical switching  

E-Print Network (OSTI)

The polarization and orbital angular momentum properties of light are of great importance in optical science and technology in the fields of high precision optical measurements and high capacity and high speed optical communications. Here we show, a totally new method, based on a combination of these two properties and using the thermal dispersion and electro-optical effect of birefringent crystals, the construction of a simple and robust scheme to rotate a light beam like a fan. Using a computer-based digital image processing technique, we determine the temperature and the thermal dispersion difference of the crystal with high resolution. We also use the rotation phenomenon to realize thermo-optic and electro-optic switches. The basic operating principles for measurement and switching processes are presented in detail. The methods developed here will have wide practical applicability in various fields, including remote sensing, materials science and optical communication networks.

Zhi-Yuan Zhou; Yan Li; Dong-Sheng Ding; Yun-Kun Jiang; Wei Zhang; Shuai Shi; Bao-Sen Shi; Guang-Can Guo

2014-05-08T23:59:59.000Z

393

A Ubiquitous Optical Microsystem Platform with Application to Optical Metrology and Chemical Sensing  

E-Print Network (OSTI)

sensor platform for optical metrology and chemical sensing.Platform with Application to Optical Metrology and ChemicalPlatform with Application to Optical Metrology and Chemical

Gerling, John

2012-01-01T23:59:59.000Z

394

Double common-path interferometer for flexible optical probe of optical coherence tomography  

E-Print Network (OSTI)

J. Fujimoto, “Optical coherence tomography,” Science 254(D. E. N. Davies, “Optical coherence-domain reflectometry: afiber common-path optical coherence tomography: sensitivity

Park, Jae Seok; Chen, Zhongping; Jeong, Myung Yung; Kim, Chang-Seok

2012-01-01T23:59:59.000Z

395

Gas dynamics of spacecraft and orbital stations (review)  

Science Journals Connector (OSTI)

This is the review of joint research executed during last 30 years at Korolev Rocket and Space Corporation “Energia” and Kutateladze Institute of Thermophysics SB RAS on the problem of gas-dynamic and contaminati...

V. N. Yarygin; Yu. I. Gerasimov; A. N. Krylov…

2011-09-01T23:59:59.000Z

396

Fiber optic geophysical sensors  

DOE Patents (OSTI)

A fiber optic geophysical sensor is described in which laser light is passed through a sensor interferometer in contact with a geophysical event, and a reference interferometer not in contact with the geophysical event but in the same general environment as the sensor interferometer. In one embodiment, a single tunable laser provides the laser light. In another embodiment, separate tunable lasers are used for the sensor and reference interferometers. The invention can find such uses as monitoring for earthquakes, and the weighing of objects. 2 figures.

Homuth, E.F.

1991-03-19T23:59:59.000Z

397

Integrated optical XY coupler  

DOE Patents (OSTI)

An integrated optical XY coupler having two converging input waveguide arms meeting in a central section and a central output waveguide arm and two diverging flanking output waveguide arms emanating from the central section. In-phase light from the input arms constructively interferes in the central section to produce a single mode output in the central output arm with the rest of the light being collected in the flanking output arms. Crosstalk between devices on a substrate is minimized by this collection of the out-of-phase light by the flanking output arms of the XY coupler. 9 figs.

Vawter, G.A.; Hadley, G.R.

1997-05-06T23:59:59.000Z

398

Integrated optical XY coupler  

DOE Patents (OSTI)

An integrated optical XY coupler having two converging input waveguide arms meeting in a central section and a central output waveguide arm and two diverging flanking output waveguide arms emanating from the central section. In-phase light from the input arms constructively interfers in the central section to produce a single mode output in the central output arm with the rest of the light being collected in the flanking output arms. Crosstalk between devices on a substrate is minimized by this collection of the out-of-phase light by the flanking output arms of the XY coupler.

Vawter, G. Allen (Albuquerque, NM); Hadley, G. Ronald (Albuquerque, NM)

1997-01-01T23:59:59.000Z

399

Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells  

SciTech Connect

We have investigated the growth and electron transport in In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} two dimensional electron gases (2DEG) and compared their properties with In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As 2DEGs. For 10?nm thick InGaAs wells, the electron mobility of InGaAs/AlAsSb 2DEGs is comparable to that of InGaAs/InAlAs 2DEGs. Upon thinning the wells to 3?nm, the 2DEG mobility is degraded quickly and stronger interface roughness scattering is observed for InGaAs/AlAsSb heterointerfaces than for InGaAs/InAlAs heterointerfaces. Changing the group-V exposure between As and Sb during growth interruptions at the InGaAs/AlAsSb interfaces did not significantly change the 2DEG mobility. With the insertion of a two monolayer InAlAs at the InGaAs/AlAsSb interfaces, the interface roughness scattering is reduced and the mobility greatly increased. The room temperature 2DEG mobility shows 66% improvement from 1.63?×?10{sup 3} cm{sup 2}/V·s to 2.71?×?10{sup 3}?cm{sup 2}/V·s for a 3?nm InGaAs well.

Huang, Cheng-Ying, E-mail: cyhuang@ece.ucsb.edu; Law, Jeremy J. M.; Rodwell, Mark J. W. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Lu, Hong; Gossard, Arthur C. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106-5050 (United States); Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

2014-03-28T23:59:59.000Z

400

Effects of Se substitution on the thermoelectric performance of n-type Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x} skutterudites  

SciTech Connect

Highlights: ? The simple solid state reaction technique was employed to prepare Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x} skutterudites. ? The thermal conductivity decreases gradually with the increasing Se content. ? Doping with moderate Se is an effective way to enhance the thermoelectric performance of Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x}. ? The highest ZT of 1.11 at 800 K is obtained for the Co{sub 4}Sb{sub 11.3}Te{sub 0.58}Se{sub 0.12} sample. -- Abstract: A series of double-substituted Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x} skutterudites have been fabricated by combining the solid state reaction and the spark plasma sintering method, and the effects of Se substitution on the thermoelectric properties are characterized by measurements of the electrical conductivity, the Seebeck coefficient and the thermal conductivity in the temperature range of 300–800 K. Doping Se into the Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x} matrix suppresses the carrier concentration, and the electrical conductivity actually decreases with the Se content. However, moderate Se doping is effective in enhancing the thermoelectric performance of the n-type Co{sub 4}Sb{sub 11.3}Te{sub 0.7?x}Se{sub x}, because of the resulted dramatically decreased thermal conductivity. Analyses indicate that the heightened point-defect scattering induced by Se doping together with the electron–phonon scattering induced by Te doping is responsible for the reduction of lattice thermal conductivity of these compounds.

Duan, Bo [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China); Zhai, Pengcheng, E-mail: pczhai@126.com [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China); Liu, Lisheng; Zhang, Qingjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)

2012-07-15T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi  

Science Journals Connector (OSTI)

The electronic properties and thermal stability of centers incorporating a vacancy and a group-V-impurity atom (P, As, Sb, or Bi) in Ge crystals have been investigated. The vacancy-group-V-impurity atom pairs (E centers) have been induced by irradiation with Co60 ? rays and studied by means of capacitance transient techniques with the use of Au-Ge Schottky barriers. It is argued that the E centers in Ge have three charge states: double negative, single negative and neutral, and introduce two energy levels into the gap. There are pronounced changes in the activation energies of charge carrier emission for the particular states with the changes in the type of impurity atoms. The emission of an electron from the doubly negatively charged state of the centers is accompanied by a large change in entropy (?S), so, the free energy of the electron ionization, ?G(????)=?H(????)?T?S(????), changes significantly with temperature. Consequently, the position of the second acceptor level of the E centers {E(????)=Ec??G(????)} is temperature dependent. In Ge crystals having shallow donor concentrations in the range 1013–1015cm?3 at equilibrium conditions half-occupancy of the doubly negatively charged state of the vacancy-group-V-impurity atom pairs occurs when the Fermi level is at Ec?(0.18–0.22)eV. Changes in the entropy of ionization and the energy of electron emission for the double negative state of the E centers follow the Meyer-Neldel rule. It has been shown that the directly measured capture cross sections of electrons at the singly negatively charged E centers are temperature dependent and can be described by the multiphonon-assisted capture model. The first acceptor level of the E centers is in the lower part of the band gap. The formation of one vacancy–group-V-impurity atom complex results in the removal of at least two electrons from the conduction band in n-type Ge. It is thought that the E centers are responsible for the fast free carrier removal and n?p conversion of the conductivity type in oxygen-lean Ge crystals upon electron- or ?-irradiation at room temperature. The thermal stability of the E centers in Ge has been found to increase with an increase in the size of donor atoms.

V. P. Markevich; I. D. Hawkins; A. R. Peaker; K. V. Emtsev; V. V. Emtsev; V. V. Litvinov; L. I. Murin; L. Dobaczewski

2004-12-27T23:59:59.000Z

402

Spatial optic multiplexer/diplexer  

DOE Patents (OSTI)

An apparatus for simultaneous transmission of optic signals having different wavelengths over a single optic fiber. Multiple light signals are transmitted through optic fibers that are formed into a circumference surrounding a central core fiber. The multiple light signals are directed by a lens into a single receiving fiber where the light combines and is then focused into the central core fiber which transmits the light to a wavelength discriminating receiver assembly.

Tremblay, Paul L. (Idaho Falls, ID)

1991-01-01T23:59:59.000Z

403

Optical Tweezer Arrays and Optical Substrates Created with Diffractive Optics Eric R. Dufresne and David G. Grier  

E-Print Network (OSTI)

Optical Tweezer Arrays and Optical Substrates Created with Diffractive Optics Eric R. Dufresne)) We describe a simple method for creating multiple optical tweezers from a single laser beam using diffractive optical elements. As a demonstration of this technique, we have implemented a 4 Ã? 4 square array

Grier, David

404

Optical Tweezer Arrays and Optical Substrates Created with Di#ractive Optics Eric R. Dufresne and David G. Grier  

E-Print Network (OSTI)

Optical Tweezer Arrays and Optical Substrates Created with Di#ractive Optics Eric R. Dufresne)) We describe a simple method for creating multiple optical tweezers from a single laser beam using di#ractive optical elements. As a demonstration of this technique, we have implemented a 4 Ã? 4 square array

Grier, David

405

High Temperature Optical Gas Sensing  

NLE Websites -- All DOE Office Websites (Extended Search)

Optical Gas Sensing Optical Gas Sensing Opportunity Research is active on optical sensors integrated with advanced sensing materials for high temperature embedded gas sensing applications. Patent applications have been filed for two inventions in this area and several other methods are currently under development. These technologies are available for licensing and/or further collaborative research from the U.S. Department of Energy's National Energy Technology Laboratory (NETL). Organizations or individuals with capabilities in optical sensor packaging for harsh environment and high temperature applications are encouraged to contact NETL to explore potential collaborative opportunities. Overview Contact NETL Technology Transfer Group techtransfer@netl.doe.gov

406

Optical Airborne Particle Counter Operation  

Science Journals Connector (OSTI)

For most cleanroom airborne particle measurements, an optical single particle ... or surrogates of the product or of the cleanroom environment. The last procedure is used to...

Alvin Lieberman

1992-01-01T23:59:59.000Z

407

Optically stimulated differential impedance spectroscopy  

DOE Patents (OSTI)

Methods and apparatuses for evaluating a material are described. Embodiments typically involve use of an impedance measurement sensor to measure the impedance of a sample of the material under at least two different states of illumination. The states of illumination may include (a) substantially no optical stimulation, (b) substantial optical stimulation, (c) optical stimulation at a first wavelength of light, (d) optical stimulation at a second wavelength of light, (e) a first level of light intensity, and (f) a second level of light intensity. Typically a difference in impedance between the impedance of the sample at the two states of illumination is measured to determine a characteristic of the material.

Maxey, Lonnie C; Parks, II, James E; Lewis, Sr., Samuel A; Partridge, Jr., William P

2014-02-18T23:59:59.000Z

408

Optical imaging of Rydberg atoms .  

E-Print Network (OSTI)

??We present an experiment exploring electromagnetically induced transparency (EIT) in Rydberg atoms in order to observe optical nonlinearities at the single photon level. ??Rb atoms… (more)

Mazurenko, Anton

2012-01-01T23:59:59.000Z

409

Phase correlations and optical coherence  

Science Journals Connector (OSTI)

We examine the properties of the recently introduced degrees of coherence regarding the phase correlations of the optical field. It is seen that some of these quantities are...

Tervo, Jani; Setälä, Tero; Friberg, Ari T

2012-01-01T23:59:59.000Z

410

Efficiencies of Quantum Optical Detectors  

E-Print Network (OSTI)

We propose a definition for the efficiency that can be universally applied to all classes of quantum optical detectors. This definition is based on the maximum amount of optical loss that a physically plausible device can experience while still replicating the properties of a given detector. We prove that detector efficiency cannot be increased using linear optical processing. That is, given a set of detectors, as well as arbitrary linear optical elements and ancillary light sources, it is impossible to construct detection devices that would exhibit higher efficiencies than the initial set.

Daniel Hogg; Dominic W. Berry; A. I. Lvovsky

2014-12-15T23:59:59.000Z

411

Sandia National Laboratories: Optics Lab  

NLE Websites -- All DOE Office Websites (Extended Search)

Engine Test Facility Central Receiver Test Facility Power Towers for Utilities Solar Furnace Dish Test Facility Optics Lab Parabolic Dishes Work For Others (WFO) User...

412

Optical oxygen concentration monitor  

DOE Patents (OSTI)

A system for measuring and monitoring the concentration of oxygen uses as a light source an argon discharge lamp, which inherently emits light with a spectral line that is close to one of oxygen`s A-band absorption lines. In a preferred embodiment, the argon line is split into sets of components of shorter and longer wavelengths by a magnetic field of approximately 2,000 Gauss that is parallel to the light propagation from the lamp. The longer wavelength components are centered on an absorption line of oxygen and thus readily absorbed, and the shorter wavelength components are moved away from that line and minimally absorbed. A polarization modulator alternately selects the set of the longer wavelength, or upshifted, components or the set of the shorter wavelength, or downshifted, components and passes the selected set to an environment of interest. After transmission over a path through that environment, the transmitted optical flux of the argon line varies as a result of the differential absorption. The system then determines the concentration of oxygen in the environment based on the changes in the transmitted optical flux between the two sets of components. In alternative embodiments modulation is achieved by selectively reversing the polarity of the magnetic field or by selectively supplying the magnetic field to either the emitting plasma of the lamp or the environment of interest. 4 figs.

Kebabian, P.

1997-07-22T23:59:59.000Z

413

Optical oxygen concentration monitor  

DOE Patents (OSTI)

A system for measuring and monitoring the concentration of oxygen uses as a light source an argon discharge lamp, which inherently emits light with a spectral line that is close to one of oxygen's A-band absorption lines. In a preferred embodiment, the argon line is split into sets of components of shorter and longer wavelengths by a magnetic field of approximately 2000 Gauss that is parallel to the light propagation from the lamp. The longer wavelength components are centered on an absorption line of oxygen and thus readily absorbed, and the shorter wavelength components are moved away from that line and minimally absorbed. A polarization modulator alternately selects the set of the longer wavelength, or upshifted, components or the set of the shorter wavelength, or downshifted, components and passes the selected set to an environment of interest. After transmission over a path through that environment, the transmitted optical flux of the argon line varies as a result of the differential absorption. The system then determines the concentration of oxygen in the environment based on the changes in the transmitted optical flux between the two sets of components. In alternative embodiments modulation is achieved by selectively reversing the polarity of the magnetic field or by selectively supplying the magnetic field to either the emitting plasma of the lamp or the environment of interest.

Kebabian, Paul (Acton, MA)

1997-01-01T23:59:59.000Z

414

Optical transcutaneous bilirubin detector  

DOE Patents (OSTI)

This invention consists of a transcutaneous bilirubin detector comprising a source of light having spectral components absorbable and not absorbable by bilirubin, a handle assembly, electronic circuitry and a fiber optic bundle connecting the assembly to the light source and circuitry. Inside the assembly is a prism that receives the light from one end of the fiber optic bundle and directs it onto the skin and directs the reflected light back into the bundle. The other end of the bundle is trifucated, with one end going to the light source and the other two ends going to circuitry that determines how much light of each kind has been reflected. A relatively greater amount absorbed by the skin from the portion of the spectrum absorbable by bilirubin may indicate the presence of the illness. Preferably, two measurements are made, one on the kneecap and one on the forehead, and compared to determine the presence of bilirubin. To reduce the impact of light absorption by hemoglobin in the blood carried by the skin, pressure is applied with a plunger and spring in the handle assembly, the pressure limited by points of a button slidably carried in the assembly that are perceived by touch when the pressure applied is sufficient.

Kronberg, J.W.

1991-03-04T23:59:59.000Z

415

Magnetic and transport properties of the rare-earth-based Heusler phases RPdZ and RPd2Z (Z=Sb,Bi)  

Science Journals Connector (OSTI)

Four series of ternary compounds RPdSb (R=Y,Ho,Er), RPdBi (R=Nd,Y,Dy,Ho,Er), RPd2Sb (R=Y,Gd-Er), and RPd2Bi (R=Y,Dy-Er) were studied by means of magnetization, magnetic susceptibility, electrical resistivity, magnetoresistivity, thermoelectric power, and Hall effect measurements, performed in the temperature range 1.5–300K and in magnetic fields up to 12T. All these ternaries, except for diamagnetic Y-based phases, exhibit localized magnetism of R3+ ions, and a few of them order antiferromagnetically at low temperatures (TN=2–14K). The equiatomic compounds show half-metallic conductivity due to the formation of narrow gaps in their electronic band structures near the Fermi energy. Their Seebeck coefficient at room temperature is exceptionally high (S up to 200?V?K), being promising for thermoelectric applications. In contrast, all the 1:2:1 phases are semimetals and their thermoelectric power is much lower (maximum S of 10–25?V?K). The Hall effect in the compounds studied corroborates complex character of their electronic structure with multiple electron and hole bands with different temperature and magnetic field variations of carrier concentrations and their mobilities.

K. Gofryk; D. Kaczorowski; T. Plackowski; A. Leithe-Jasper; Yu. Grin

2005-09-09T23:59:59.000Z

416

Stimulated crystallization of melt-quenched Ge{sub 2}Sb{sub 2}Te{sub 5} films employing femtosecond laser double pulses  

SciTech Connect

The phase transformation of Ge{sub 2}Sb{sub 2}Te{sub 5} films from the melt-quenched amorphous phase into the crystalline phase induced by 800 nm, 100 fs laser pulses has been studied. For partly amorphized films, progressive crystallization could be induced by single pulses, which can be explained by growth of already existing crystalline embryos. For completely amorphized films, it was not possible to induce crystallization with one or two consecutive pulses; three pulses being the threshold for the onset of crystallization. By employing a fs laser double pulse with an adjustable inter-pulse delay, partial crystallization could be triggered for a delay range of 200 fs-100 ps, while for longer delays no crystallization was possible. The time window for stimulated crystallization can be related to the relaxation dynamics of free electrons excited by the first pulse, which are further excited by the second pulse still remaining in the excited state. Our results indicate that the lifetime of excited electrons in melt-quenched amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} is Almost-Equal-To 100 ps.

Cotton, Rebecca L.; Siegel, Jan [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, E-28006 Madrid (Spain)

2012-12-15T23:59:59.000Z

417

Thermoelectric Properties of P-type Skutterudites YbxFe3.5Ni0.5Sb12 (0.8 x 1)  

SciTech Connect

P-type skutterudites, with nominal compositions YbxFe3.5Ni0.5Sb12 (0.8 x 1), have been synthesized by induction melting with subsequent annealing, and their thermoelectric properties evaluated from 3.5 K to 745 K to assess their suitability for thermoelectric based waste heat recovery applications. We report results for the synthesis and measurements of Seebeck coefficient (S), electrical resistivity ( ), thermal conductivity ( ), Hall coefficient (RH), and effective mass (m*/m0) of YbxFe3.5Ni0.5Sb12 (0.8 x 1). Powder x-ray diffraction and electron probe microanalysis (EPMA) show that this system has a narrow filling fraction range of x ~ 0.84 to 0.86 for Yb in the crystallographic voids. All samples show positive RH for the entire temperature range studied with carrier concentrations ranging from 9.6 1020 to 2.8 1021 cm-3 at room temperature. Relatively high values of S result in high power factors up to 17 Wcm-1K-2 at room temperature. However, large values of and a sharp reduction in the S at high temperature due to bipolar conduction prevent the attainment of high thermoelectric figure of merit.

Cho, Jung Y [GM R& D and Planning, Warren, Michigan; Ye, Zuxin [GM Research and Development Center; Tessema, M. [GM Research and Development Center; Waldo, R.A. [GM Research and Development Center; Salvador, James R. [GM R& D and Planning, Warren, Michigan; Yang, Jihui [General Motors Corporation; Cai, Wei [ORNL; Wang, Hsin [ORNL

2012-01-01T23:59:59.000Z

418

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets  

SciTech Connect

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Castaño, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

2013-11-14T23:59:59.000Z

419

Optical cavity furnace for semiconductor wafer processing  

DOE Patents (OSTI)

An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

Sopori, Bhushan L.

2014-08-05T23:59:59.000Z

420

CHARACTERISATION OF SEMICONDUCTOR OPTICAL AMPLIFIERS FOR ALL-OPTICAL REGENERATION  

E-Print Network (OSTI)

electrical pumping, broad spectral range and opportunities for integration and mass production. Among these components, the semiconductor optical amplifier (SOA) with gain saturation, low optical and electrical power Various SOAs from Alcatel-Thales III-V lab were characterized in the framework of the French project FUTUR

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Quantum Optical Version of Classical Optical Transformations and Beyond  

E-Print Network (OSTI)

By the newly developed technique of integration within an ordered product (IWOP) of operators, we explore quantum optical version of classical optical transformations such as optical Fresnel transform, Hankel transform, fractional Fourier transform, Wigner transform, wavelet transform and Fresnel-Hadmard combinatorial transform etc. In this way one may gain benefit for developing classical optics theory from the research in quantum optics, or vice-versa. We can not only find some new quantum mechanical unitary operators which correspond to the known optical transformations, deriving a new theorem for calculating quantum tomogram of density operators, but also can reveal some new classical optical transformations. We derive GFO's normal product form and its canonical coherent state representation and find that GFO is the loyal representation of symplectic group multiplication rule. We show that GFT is just the transformation matrix element of GFO in the coordinate representation such that two successive GFTs is still a GFT. The ABCD rule of the Gaussian beam propagation is directly demonstrated in the context of quantum optics. Especially, the introduction of quantum mechanical entangled state representations opens up a new area to finding new classical optical transformations. The complex wavelet transform and the condition of mother wavelet are studied in the context of quantum optics too. Throughout our discussions, the coherent state, the entangled state representation of the two-mode squeezing operators and the IWOP technique are fully used. All these confirms Dirac's assertion: " ... for a quantum dynamic system that has a classical analogue, unitary transformation in the quantum theory is the analogue of contact transformation in the classical theory".

Hong-yi Fan; Li-yun Hu

2010-10-03T23:59:59.000Z

422

Optical forces and optical torques on various materials arising from optical lattices in the Lorentz-Mie regime  

E-Print Network (OSTI)

By combining the Maxwell stress tensor with the finite-difference time-domain (FDTD) method, we calculate the optical force and optical torque on particles from optical lattices. We compare our method to the two-component ...

Jia, Lin

423

Semiconductor-based optical refrigerator  

DOE Patents (OSTI)

Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

Epstein, Richard I. (Santa Fe, NM); Edwards, Bradley C. (Nekoosa, WI); Sheik-Bahae, Mansoor (Albuquerque, NM)

2002-01-01T23:59:59.000Z

424

Bi-stable optical actuator  

DOE Patents (OSTI)

The present invention is a bi-stable optical actuator device that is depowered in both stable positions. A bearing is used to transfer motion and smoothly transition from one state to another. The optical actuator device may be maintained in a stable position either by gravity or a restraining device.

Holdener, Fred R. (Tracy, CA); Boyd, Robert D. (Livermore, CA)

2000-01-01T23:59:59.000Z

425

New Types of Optical Glass  

Science Journals Connector (OSTI)

... IN view of the interest shown in new optical glasses recently produced in Great Britain and in the United States, we wish to summarize ... probable lines of development. Advances in lens design have led to a demand for new glasses with optical properties different from those available hitherto as outlined in a recent paper by ...

W. M. HAMPTON; R. E. BASTICK; W. N. WHEAT

1944-03-04T23:59:59.000Z

426

Optical Signal Processing in All-Optical Packet Routing Systems S. J. Ben Yoo  

E-Print Network (OSTI)

Optical Signal Processing in All-Optical Packet Routing Systems S. J. Ben Yoo Department@ece.ucdavis.edu, Abstract: This paper discusses important signal processing functions in all-optical packet routing systems. We will pay special attention to all-optical time-to-live, optical performance monitoring, optical

Kolner, Brian H.

427

Optical Approach to Gravitational Redshift  

E-Print Network (OSTI)

An optical approach begins by interpreting the gravitational redshift resulting to a change in the relative velocity of light due to the medium of propagation in the gravitational field. The discussion continues by pointing out an agreement in structure between the equation for rays in geometrical optics and the geodesic equation of general relativity. From their comparison we learn that the path of rays should be given by the relation $ds^2=n^2(r)dr^2+r^2d\\theta^2$, not by $ds^2=dr^2+r^2d\\theta^2$, in a medium with spherical symmetry of refractive index $n(r)$. The development of an optical analogy suggests introducing $n^2(r)$ in place of $g_{rr}$ as an optical version of the Schwarzschild metric. In form and content, $n^2(r)$ is different from $g_{rr}$. The optical point of view replaces the general-relativity explanations in terms of time and gravitation.

Y. G. Yi

2012-04-12T23:59:59.000Z

428

Toward single-cycle optical pulses  

E-Print Network (OSTI)

Single-cycle optical pulses, the never-before-achieved regime, have a great potential for attosecond science and phase-sensitive nonlinear optics. To achieve single-cycle optical pulses by active synchronization, three ...

Kim, Jung-Won, 1976-

2004-01-01T23:59:59.000Z

429

Development of optical field emitter arrays  

E-Print Network (OSTI)

Optical field emitters are electron emission sources actuated by incident light. Optically actuated field emitters may produce ultrafast pulses of electrons when excited by ultrafast optical pulses, thus making them of ...

Yang, Yujia, S.M. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

430

Thermoelectric properties of chalcopyrite type CuGaTe2 and chalcostibite CuSbS2 Vijay Kumar Gudelli, V. Kanchana, G. Vaitheeswaran, A. Svane, and N. E. Christensen  

E-Print Network (OSTI)

of zT ¼ 1.4, confirming that CuGaTe2 is a promising material for high temperature thermoelectric and concentration suggests that CuSbS2 will be a good thermoelectric material at low temperatures, similarly Thermoelectric (TE) materials with potential applica- tions within power generation and refrigeration have repre

Svane, Axel Torstein

431

JOURNAL DE PHYSIQUE CoZZoque C8, suppZIment au n08, Tome 41, aoat 1980, page C8-103 NUCLEATION OF Sb-MICROCRYSTALS IN AN INERT-GAS ATMOSPHERE  

E-Print Network (OSTI)

antimony for the detection of metal clusters 5 ) . in electrical resistance, light trans- The unexpectedlySb predominantly as Sbl atoms, as distinct from Sbq clusters known to evaporate from elementary antimony. Sputtered films 0 (d 2 1000 A) exhibit an electrical re- sistance which is about one order of mag- nitude higher

Paris-Sud XI, Université de

432

Quantum Enabled Security (QES) for Optical Communications  

NLE Websites -- All DOE Office Websites (Extended Search)

Quantum Enabled Security (QES) for Optical Communications Quantum Enabled Security (QES) for Optical Communications Quantum Enabled Security (QES) for Optical Communications Los Alamos National Laboratory has developed Quantum Enabled Security (QES), a revolutionary new cybersecurity capability using quantum (single-photon) communications integrated with optical communications to provide a strong, innate, security foundation at the photonic layer for optical fiber networks. July 10, 2013 Quantum Enabled Security (QES) for Optical Communications Available for thumbnail of Feynman Center (505) 665-9090 Email Quantum Enabled Security (QES) for Optical Communications Applications: Secure communication over optical or free space networks Financial networks Transparent access networks: fiber to the home (FTTH); fiber to the

433

Semiconductor Physics at the Optical Sciences Center  

Science Journals Connector (OSTI)

This talk reviews semiconductor physics experiments and theory at the Optical Sciences Center including optical bistability, femtosecond dynamics, as well as semiconductor laser...

Koch, Stephan W

434

Quantum Enabled Security (QES) for Optical Communications  

NLE Websites -- All DOE Office Websites (Extended Search)

integrated with optical communications to provide a strong, innate, security foundation at the photonic layer for optical fiber networks. July 10, 2013 Quantum Enabled...

435

Optical Pipeline for Transport of Particles  

Science Journals Connector (OSTI)

We developed an optical pipeline for laser-guiding particles in air using vortex beams. Transport of agglomerates of nanoparticles forward and backward between two optical traps...

Shvedov, Vladlen G; Rode, Andrei V; Izdebskaya, Yana V; Desyatnikov, Anton S; Krolikowski, Wieslaw Z; Kivshar, Yuri S

436

Science, Optics and You: Mirror and Images  

NLE Websites -- All DOE Office Websites (Extended Search)

opticstutorialsindex.html INTRODUCTION MIRRORS AND IMAGES MODULE m3 SCIENCE, OPTICS & YOU GUIDEBOOK - 44 - SCIENCE, OPTICS & YOU GUIDEBOOK - 45 - m3: Mirrors and...

437

Science, Optics and You: Light and Colors  

NLE Websites -- All DOE Office Websites (Extended Search)

opticstutorialsindex.html INTRODUCTION LIGHT AND COLORS MODULE m4 SCIENCE, OPTICS & YOU GUIDEBOOK - 62 - SCIENCE, OPTICS & YOU GUIDEBOOK - 63 - m4: Light &...

438

Correlation Between Optical Properties And Chemical Composition...  

NLE Websites -- All DOE Office Websites (Extended Search)

Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films . Correlation Between Optical Properties And Chemical Composition Of...

439

Sandia National Labs: PCNSC: Research: Optical Sciences  

NLE Websites -- All DOE Office Websites (Extended Search)

Optical Sciences The focus of the Optical Sciences thrust is to understand and exploit the elegant interaction between light and matter. Our research portfolio encompasses the...

440

Design for an optical random access memory  

Science Journals Connector (OSTI)

Cascadable optically nonlinear arrays of logic devices interconnected with space invariant optical components are proposed for the core memory of a digital computer. Access time to any...

Murdocca, Miles J; Sugla, Binay

1989-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Science, Optics and You: Thinking About Light and Optics  

NLE Websites -- All DOE Office Websites (Extended Search)

mathematics, literature, history and social studies, art, and reading and writing in science. Module 1 differs from the other 7 modules in Science, Optics & You in that it stands...

442

Active Optics, Adaptive Optics, and Laser Guide Stars  

Science Journals Connector (OSTI)

...Southern Observatory, Karl-Schwarzschild-Strasse 2, 85748 Garching...WITH A SEGMENTED ADAPTIVE MIRROR, APPLIED OPTICS 31 : 3161...Southern Observatory, Karl-Schwarzschild-Strasse 2, 85748 Garching...defo-cusing, decentering, or mirror deformations generated by...

N. Hubin; L. Noethe

1993-11-26T23:59:59.000Z

443

Optic probe for semiconductor characterization  

DOE Patents (OSTI)

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

Sopori, Bhushan L. (Denver, CO); Hambarian, Artak (Yerevan, AM)

2008-09-02T23:59:59.000Z

444

Quantum Optical State Comparison Amplifier  

E-Print Network (OSTI)

It is a fundamental principle of quantum theory that an unknown state cannot be copied or, as a consequence, an unknown optical signal cannot be amplified deterministically and perfectly. Here we describe a protocol that provides nondeterministic quantum optical amplification in the coherent state basis with high gain, high fidelity and which does not use quantum resources. The scheme is based on two mature quantum optical technologies, coherent state comparison and photon subtraction. The method compares favourably with all previous nondeterministic amplifiers in terms of fidelity and success probability.

Electra Eleftheriadou; Stephen M. Barnett; John Jeffers

2013-11-22T23:59:59.000Z

445

Optical analog-to-digital converter  

DOE Patents (OSTI)

An optical analog-to-digital converter (ADC) is disclosed which converts an input optical analog signal to an output optical digital signal at a sampling rate defined by a sampling optical signal. Each bit of the digital representation is separately determined using an optical waveguide interferometer and an optical thresholding element. The interferometer uses the optical analog signal and the sampling optical signal to generate a sinusoidally-varying output signal using cross-phase-modulation (XPM) or a photocurrent generated from the optical analog signal. The sinusoidally-varying output signal is then digitized by the thresholding element, which includes a saturable absorber or at least one semiconductor optical amplifier, to form the optical digital signal which can be output either in parallel or serially.

Vawter, G. Allen (Corrales, NM); Raring, James (Goleta, CA); Skogen, Erik J. (Albuquerque, NM)

2009-07-21T23:59:59.000Z

446

Optical sedimentation recorder  

DOE Patents (OSTI)

A robotic optical sedimentation recorder is described for the recordation of carbon flux in the oceans wherein both POC and PIC particles are captured at the open end of a submersible sampling platform, the captured particles allowed to drift down onto a collection plate where they can be imaged over time. The particles are imaged using three separate light sources, activated in sequence, one source being a back light, a second source being a side light to provide dark field illumination, and a third source comprising a cross polarized light source to illuminate birefringent particles. The recorder in one embodiment is attached to a buoyancy unit which is capable upon command for bringing the sedimentation recorder to a programmed depth below the ocean surface during recordation mode, and on command returning the unit to the ocean surface for transmission of recorded data and receipt of new instructions. The combined unit is provided with its own power source and is designed to operate autonomously in the ocean for extended periods of time.

Bishop, James K.B.

2014-05-06T23:59:59.000Z

447

Fiber optic temperature sensor  

SciTech Connect

Our fiber optic temperature measurement sensor and system is a major improvement over methods currently in use in most industrial processes, and it delivers all of the attributes required simplicity, accuracy, and cost efficiency-to help improve all of these processes. Because temperature is a basic physical attribute of nearly every industrial and commercial process, our system can eventually result in significant improvements in nearly every industrial and commercial process. Many finished goods, and the materials that go into them, are critically dependent on the temperature. The better the temperature measurement, the better quality the goods will be and the more economically they can be produced. The production and transmission of energy requires the monitoring of temperature in motors, circuit breakers, power generating plants, and transmission line equipment. The more reliable and robust the methods for measuring these temperature, the more available, stable, and affordable the supply of energy will become. The world is increasingly realizing the threats to health and safety of toxic or otherwise undesirable by products of the industrial economy in the environment. Cleanup of such contamination often depends on techniques that require the constant monitoring of temperature in extremely hazardous environments, which can damage most conventional temperature sensors and which are dangerous for operating personnel. Our system makes such monitoring safer and more economical.

Rabold, D.

1995-12-01T23:59:59.000Z

448

Neutron Scattering Investigation of Phonon Scattering Rates in Ag1-xSb1+xTe2+x (x = 0, 0.1, and 0.2)  

SciTech Connect

The phonon dispersions and scattering rates of the thermoelectric material AgSbTe$_{2}$ were measured as a function of temperature with inelastic neutron scattering. The results show that phonon scattering rates are large and weakly dependent on temperature. The lattice thermal conductivity was calculated from the measured phonon lifetimes and group velocities, providing good agreement with bulk transport measurements. The measured phonon scattering rates and their temperature dependence are compared with models of phonon scattering by anharmonicity and point defect. We find that these processes cannot account for the large total phonon scattering rates observed, and their lack of temperature dependence. Neutron and synchrotron diffraction measurements on single crystals revealed an extensive nanostructure from cation ordering, which is likely responsible for the strong phonon scattering.

Abernathy, Douglas L [ORNL; Budai, John D [ORNL; Delaire, Olivier A [ORNL; Ehlers, Georg [ORNL; Hong, Tao [ORNL; Karapetrova, Evguenia A. [Argonne National Laboratory (ANL); Ma, Jie [ORNL; May, Andrew F [ORNL; McGuire, Michael A [ORNL; Specht, Eliot D [ORNL

2014-01-01T23:59:59.000Z

449

Surface and interfacial reaction study of half cycle atomic layer deposited HfO{sub 2} on chemically treated GaSb surfaces  

SciTech Connect

An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (XPS) study was conducted in order to investigate the evolution of the HfO{sub 2} dielectric interface with GaSb(100) surfaces after sulfur passivation and HCl etching, designed to remove the native oxides. With the first pulses of tetrakis(dimethylamido)hafnium(IV) and water, a decrease in the concentration of antimony oxide states present on the HCl-etched surface is observed, while antimony sulfur states diminished below the XPS detection limit on sulfur passivated surface. An increase in the amount of gallium oxide/sulfide is seen, suggesting oxygen or sulfur transfers from antimony to gallium during antimony oxides/sulfides decomposition.

Zhernokletov, D. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Dong, H.; Brennan, B.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Yakimov, M.; Tokranov, V.; Oktyabrsky, S. [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States)] [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States); Wallace, R. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2013-04-01T23:59:59.000Z

450

INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF OPTICS A: PURE AND APPLIED OPTICS The plurality of optical singularities  

E-Print Network (OSTI)

INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF OPTICS A: PURE AND APPLIED OPTICS EDITORIAL The plurality of optical singularities Guest Editors Michael Berry (Co-Director of NATO ARW) H H Wills Physics, Kiev, Ukraine This collection of papers arose from an Advanced Research Workshop on Singular Optics

Berry, Michael Victor

451

Nanocomposites for Coatings and Optics  

Science Journals Connector (OSTI)

The preparation of optical materials has to follow only one important requirement. The materials have to be transparent for the considered wavelength. In oder to obtain this, the phase dimension of these mater...

Helmut K. Schmidt

1995-01-01T23:59:59.000Z

452

Ion optics of RHIC EBIS  

SciTech Connect

RHIC EBIS has been commissioned to operate as a versatile ion source on RHIC injection facility supplying ion species from He to Au for Booster. Except for light gaseous elements RHIC EBIS employs ion injection from several external primary ion sources. With electrostatic optics fast switching from one ion species to another can be done on a pulse to pulse mode. The design of an ion optical structure and the results of simulations for different ion species are presented. In the choice of optical elements special attention was paid to spherical aberrations for high-current space charge dominated ion beams. The combination of a gridded lens and a magnet lens in LEBT provides flexibility of optical control for a wide range of ion species to satisfy acceptance parameters of RFQ. The results of ion transmission measurements are presented.

Pikin, A.; Alessi, J.; Beebe, E.; Kponou, A.; Okamura, M.; Raparia, D.; Ritter, J.; Tan, Y.; Kuznetsov, G.

2011-09-10T23:59:59.000Z

453

Advances in Solar Optical Materials  

Science Journals Connector (OSTI)

This review contains several categories of optical materials that are used in the conversion or modification of solar energy for heating, cooling and lighting purposes in buildings and other structures. The ty...

Carl M. Lampert

1989-01-01T23:59:59.000Z

454

Scientists seek nonlinear optical materials  

Science Journals Connector (OSTI)

Nonlinear optical materials seem about to do for light what semiconductors already have done for electricity. ... Successful development of these materials could mean big payoffs in telecommunications, data processing, nuclear fusion, and applications of lasers in commerce and industry generally. ...

1982-10-04T23:59:59.000Z

455

Electrically-driven optical antennas  

E-Print Network (OSTI)

Unlike radiowave antennas, optical nanoantennas so far cannot be fed by electrical generators. Instead, they are driven by light or via optically active materials in their proximity. Here, we demonstrate direct electrical driving of an optical nanoantenna featuring an atomic-scale feed gap. Upon applying a voltage, quantum tunneling of electrons across the feed gap creates broadband quantum shot noise. Its optical frequency components are efficiently converted into photons by the antenna. We demonstrate that the properties of the emitted photons are fully controlled by the antenna architecture, and that the antenna improves the quantum efficiency by up to two orders of magnitude with respect to a non-resonant reference system. Our work represents a new paradigm for interfacing electrons and photons at the nanometer scale, e.g. for on-chip wireless data communication, electrically driven single- and multiphoton sources, as well as for background-free linear and nonlinear spectroscopy and sensing with nanometer...

Kern, Johannes; Prangsma, Jord C; Emmerling, Monika; Kamp, Martin; Hecht, Bert

2015-01-01T23:59:59.000Z

456

Scintillator fiber optic long counter  

DOE Patents (OSTI)

A flat response position sensitive neutron detector capable of providing neutron spectroscopic data utilizing scintillator fiber optic filaments embedded in a neutron moderating housing having an open end through which neutrons enter to be detected.

McCollum, Tom (Sterling, VA); Spector, Garry B. (Fairfax, VA)

1994-01-01T23:59:59.000Z

457

Optical and optoelectronic fiber devices  

E-Print Network (OSTI)

The ability to integrate materials with disparate electrical, thermal, and optical properties into a single fiber structure enabled the realization of fiber devices with diverse and complex functionalities. Amongst those, ...

Shapira, Ofer, Ph. D. Massachusetts Institute of Technology

2007-01-01T23:59:59.000Z

458

New optical materials containing isobenzofuran  

E-Print Network (OSTI)

Isobenzofuran, a member of the benzo[c]heterocycles, is an extremely reactive molecule with unusual electronic properties. In this thesis we investigate the integration of isobenzofuran subunits into conjugated optical ...

Meek, Scott Thomas

2009-01-01T23:59:59.000Z

459

ARM - Measurement - Hydrometeor optical properties  

NLE Websites -- All DOE Office Websites (Extended Search)

optical properties ARM Data Discovery Browse Data Comments? We would love to hear from you Send us a note below or call us at 1-888-ARM-DATA. Send Measurement : Hydrometeor...

460

Optical transitions in carbon nanotubes  

Science Journals Connector (OSTI)

Analytical expressions for the optical matrix elements of semiconducting carbon nanotubes are obtained for different polarizations of the incident light. It is shown that, for the light polarized along the nanotube axis and transitions between the extrema of electronic subbands, the optical matrix element only weakly depends on the nanotube chirality and excitation energy. It is found that, for the light polarized in the plane perpendicular to the nanotube axis, both v2?c1 and v1?c2 transitions are allowed.

S. V. Goupalov

2005-11-03T23:59:59.000Z

Note: This page contains sample records for the topic "optics sb ras" from the National Library of EnergyBeta (NLEBeta).
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461

Light diffusing fiber optic chamber  

DOE Patents (OSTI)

A light diffusion system for transmitting light to a target area. The light is transmitted in a direction from a proximal end to a distal end by an optical fiber. A diffusing chamber is operatively connected to the optical fiber for transmitting the light from the proximal end to the distal end and transmitting said light to said target area. A plug is operatively connected to the diffusing chamber for increasing the light that is transmitted to the target area.

Maitland, Duncan J. (Lafayette, CA)

2002-01-01T23:59:59.000Z

462

Optical Conductivity with Holographic Lattices  

E-Print Network (OSTI)

We add a gravitational background lattice to the simplest holographic model of matter at finite density and calculate the optical conductivity. With the lattice, the zero frequency delta function found in previous calculations (resulting from translation invariance) is broadened and the DC conductivity is finite. The optical conductivity exhibits a Drude peak with a cross-over to power-law behavior at higher frequencies. Surprisingly, these results bear a strong resemblance to the properties of some of the cuprates.

Gary T. Horowitz; Jorge E. Santos; David Tong

2012-08-03T23:59:59.000Z

463

Optical feedback structures and methods of making  

DOE Patents (OSTI)

An optical resonator can include an optical feedback structure disposed on a substrate, and a composite including a matrix including a chromophore. The composite disposed on the substrate and in optical communication with the optical feedback structure. The chromophore can be a semiconductor nanocrystal. The resonator can provide laser emission when excited.

Snee, Preston T; Chan, Yin Thai; Nocera, Daniel G; Bawendi, Moungi G

2014-11-18T23:59:59.000Z

464

Nanometric Optical Imaging Frontiers in Chemical Imaging  

E-Print Network (OSTI)

Nanometric Optical Imaging Frontiers in Chemical Imaging Seminar Series Presented by... Professor growing field which has provided for nanometric optical imaging in the near-field. Even though a variety of techniques are being developed with nanometric optical imaging potential, near-field optics remains the most

465

BIO-OPTICAL PRESENTATIONS YEARS 2000 2004  

E-Print Network (OSTI)

BIO-OPTICAL PRESENTATIONS YEARS 2000 ­ 2004 YEAR 00-01 Armstrong, R.A., F. Gilbes, R. Guerrero. Lopez, and F. Gilbes, 2000, "Apparent Optical Properties at the Caribbean Time Station", Ocean Optics XV, Monaco. Gilbes, F., and R.A. Armstrong, 2000, "Inherent Optical Properties at the Caribbean Time Series

Gilbes, Fernando

466

CALCULATING OPTICAL CONSTANTS OF GLAZING MATERIALS  

E-Print Network (OSTI)

Solar Energy CALCULATING OPTICAL CONSTANTS OF GLAZING MATERIALS Michael Rub August 1981 TWO-WEEK LOAN

Rubin, Michael

2013-01-01T23:59:59.000Z

467

Advanced Optics | Center for Functional Nanomaterials  

NLE Websites -- All DOE Office Websites (Extended Search)

Optical Spectroscopy and Microscopy Optical Spectroscopy and Microscopy optics The Advanced Optical Spectroscopy & Microscopy Facility combines a broad range of optical instruments suitable for studies of optical properties of hard, soft or biological materials using ultrafast and nonlinear spectroscopy, and single-molecule optical and confocal methods. Capabilities Fluorescence imaging (up to five channels simultaneously), two-color fluorescence lifetime imaging, spectral imaging, and fluorescence correlation spectroscopy Fluorescence lifetime measurements, including time-resolved fluorescence anisotropy and time-resolved fluorescence spectra, using single-photon counting and fluorescence upconversion methods Single-molecule spectroscopy: fluorescence intensity, lifetimes, anisotropy and fluorescence spectra

468

Optical manufacturing requirements for an AVLIS plant  

SciTech Connect

A uranium enrichment plant utilizing Atomic Vapor Laser Isotope Separation (AVLIS) technology is currently being planned. Deployment of the Plant will require tens of thousands of commercial and custom optical components and subsystems. The Plant optical system will be expected to perform at a high level of optical efficiency and reliability in a high-average-power-laser production environment. During construction, demand for this large number of optics must be coordinated with the manufacturing capacity of the optical industry. The general requirements and approach to ensure supply of optical components is described. Dynamic planning and a closely coupled relationship with the optics industry will be required to control cost, schedule, and quality.

Primdahl, K.; Chow, R.; Taylor, J.R.

1997-07-14T23:59:59.000Z

469

Energy Efficient All-Optical Arbitration in Optical Network-on-Chip  

E-Print Network (OSTI)

Energy Efficient All-Optical Arbitration in Optical Network-on-Chip Somayyeh Koohi+ , Yawei Yin *Email: sbyoo@ucdavis.edu Abstract: We propose an all-optical arbitration architecture to resolve end-point contention in the optical networks-on-chip. The proposed architecture reduces on-chip optical power

Kolner, Brian H.

470

Optical Arbitrary Waveform Generation Based Optical-Label Switching Transmitter with  

E-Print Network (OSTI)

Optical Arbitrary Waveform Generation Based Optical-Label Switching Transmitter with All-Optical, 95616 Email: sbyoo@ucdavis.edu Abstract: This paper introduces a modulation-format transparent optical-label switching transmitter based on optical arbitrary waveform generation. Packets consisting of 100 Gb

Kolner, Brian H.

471

Optical ampli ers in broadcast optical networks: A Yatindra Nath Singh, miete  

E-Print Network (OSTI)

Optical ampli ers in broadcast optical networks: A survey Yatindra Nath Singh, miete Department@ee.iitd.ernet.in Abstract Optical data networks are needed to meet ever increasing bandwidth re- quirements. Broadcast optical networks can provide easy and reliable imple- mentation of optical networks, but due to limited

Singh Yatindra Nath

472

Indoor experiment of BER performance of optical CDMA system using optical ZCZ code  

Science Journals Connector (OSTI)

The optical ZCZ code, which is a set of pairs of binary and bi-phase sequences with zero correlation zone, can provide optical code division multiple access (CDMA) communication system without co-channel interference. We proposed the compact construction ... Keywords: CDMA system, optical ZCZ code, optical wireless communication, shifting of optical axis

Takahiro Matsumoto; Yu Suwaki; Shinya Matsufuji

2010-02-01T23:59:59.000Z

473

The Strontium Optical Lattice Clock: Optical Spectroscopy with Sub-Hertz Accuracy  

E-Print Network (OSTI)

The Strontium Optical Lattice Clock: Optical Spectroscopy with Sub-Hertz Accuracy by Andrew D of Philosophy Department of Physics 2008 #12;This thesis entitled: The Strontium Optical Lattice Clock: Optical in the above mentioned discipline. #12;Ludlow, Andrew D. (Ph.D., Physics) The Strontium Optical Lattice Clock

Jin, Deborah

474

The College of Optics & Photonics The College of Optics and Photonics  

E-Print Network (OSTI)

CREOL The College of Optics & Photonics The College of Optics and Photonics #12;CREOL The College of Optics & Photonics CREOLThe College of Optics and Photonics Industrial Affiliates Day 2010 #12;CREOL The College of Optics & Photonics Prof. William T. Rhodes Department of Comp & Elect Engrng & Comp Science

Van Stryland, Eric

475

High precision and continuous optical transport using a standing wave optical  

E-Print Network (OSTI)

High precision and continuous optical transport using a standing wave optical line trap Vassili://chaos.utexas.edu/ Abstract: We introduce the Standing Wave Optical Line Trap (SWOLT) as a novel tool for precise optical nanoparticles. © 2011 Optical Society of America OCIS codes: (000.2170) Equipment and techniques; (120

Texas at Austin. University of

476

Beneficial effect of Se substitution on thermoelectric properties of Co{sub 4}Sb{sub 11.9-x}Te{sub x}Se{sub 0.1} skutterudites  

SciTech Connect

Skutterudite-based compounds, Co{sub 4}Sb{sub 12-x-y}Te{sub x}Se{sub y} (x=0.4, 0.5, 0.6 and y=0.0, 0.1), are synthesized by the solid state reaction and the spark plasma sintering methods, and their structure and the thermoelectric properties have been investigated systematically. It is found that Se doping results in decrease of the lattice parameter and refinement of the particle size compared with those of Se-free samples. The Se-doped samples do not yield a certain increase in the power factor, but show a significant depression in the lattice thermal conductivity. The highest dimensionless figure of merit ZT=1.09 is achieved at 800 K for the Co{sub 4}Sb{sub 11.3}Te{sub 0.6}Se{sub 0.1} compound, which is improved by 15% compared with that of Te alone doped Co{sub 4}Sb{sub 11.4}Te{sub 0.6} compound at the corresponding temperature. - Graphical abstract: The Te and Se co-doped Co{sub 4}Sb{sub 11.9-x}Te{sub x}Se{sub 0.1} skutterudites show amazingly lower thermal conductivity ({kappa}) and lattice thermal conductivity ({kappa}{sub L}) compared with those of Co{sub 4}Sb{sub 12-x}Te{sub x} skutterudites. Highlights: Black-Right-Pointing-Pointer Te and Se co-doped Co{sub 4}Sb{sub 12-x-y}Te{sub x}Se{sub y} compounds have been synthesized by the solid state reaction method. Black-Right-Pointing-Pointer Doping of Se resulted in decrease of the lattice parameter and refinement of the particle size. Black-Right-Pointing-Pointer The co-doped skutterudites show amazingly lower lattice thermal conductivity. Black-Right-Pointing-Pointer Co-doping with Te and Se is an attractive approach to enhance the TE performance of skutterudites.

Duan, Bo [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China); Zhai, Pengcheng, E-mail: pczhai@126.com [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, No. 122, Luoshi Road, Wuhan 430070 (China)] [State Key Laboratory of Advanced Technology for Materials Syn