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Sample records for optics sb ras

  1. Self-Assembled ErSb Nanostructures with Optical Applications in Infrared

    Office of Scientific and Technical Information (OSTI)

    and Terahertz (Journal Article) | SciTech Connect Self-Assembled ErSb Nanostructures with Optical Applications in Infrared and Terahertz Citation Details In-Document Search Title: Self-Assembled ErSb Nanostructures with Optical Applications in Infrared and Terahertz Authors: Lu, Hong ; Ouellette, Daniel G. ; Preu, Sascha ; Watts, Justin D. ; Zaks, Benjamin ; Burke, Peter G. ; Sherwin, Mark S. ; Gossard, Arthur C. Publication Date: 2014-03-12 OSTI Identifier: 1160953 DOE Contract Number:

  2. Effect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers

    SciTech Connect (OSTI)

    Janiak, F. Motyka, M.; S?k, G.; Dyksik, M.; Ryczko, K.; Misiewicz, J.; Weih, R.; Hfling, S.; Kamp, M.; Patriarche, G.

    2013-12-14

    Optical properties of molecular beam epitaxially grown type II W shaped GaSb/AlSb/InAs/GaIn(As)Sb/InAs/AlSb/GaSb quantum wells (QWs) designed for the active region of interband cascade lasers have been investigated. Temperature dependence of Fourier-transformed photoluminescence and photoreflectance was employed to probe the effects of addition of arsenic into the original ternary valence band well of GaInSb. It is revealed that adding arsenic provides an additional degree of freedom in terms of band alignment and strain tailoring and allows enhancing the oscillator strength of the active type II transition. On the other hand, however, arsenic incorporation apparently also affects the structural and optical material quality via generating carrier trapping states at the interfaces, which can deteriorate the radiative efficiency. These have been evidenced in several spectroscopic features and are also confirmed by cross-sectional transmission electron microscopy images. While arsenic incorporation into type II QWs is a powerful heterostructure engineering tool for optoelectronic devices, a compromise has to be found between ideal band structure properties and high quality morphological properties.

  3. Structural and optical properties of Sb{sub 2}S{sub 3} nanocrystals in glass

    SciTech Connect (OSTI)

    Mishra, Rakesh K. Kashyap, Raman Vedeshwar, A. G. Tandon, R. P.

    2014-04-24

    In this work conventional solid state precipitation method is adopted to fabricate Sb{sub 2}S{sub 3} nanocrystals in glass. The glass composition is optimized for proper host glass matrix to grow antimony trisulphide semiconductor quantum dots. The dot size is modified by heat treatment of glass samples in the temperature range from 550C to 700C for various time durations. Structural studies are carried out by X-ray diffraction and transmission electron microscopy and nanoparticles with size ranges from 8 nm to 70 nm are obtained. Quantum dots so grown were further characterized by optical absorption spectroscopy and a blue shift is observed for absorption edge energy that conform the quantum confinement effect.

  4. Electronic and optical properties of TiCoSb under different pressures

    SciTech Connect (OSTI)

    Xu Bin; Zhang Jing; Liang Jianchu; Gao Guoying; Yi Lin

    2012-08-15

    The electronic structure and optical properties of TiCoSb are studied by the first-principles calculation. It is found that the band gaps increase with the pressure increasing. It is noted that the increase of the band gap is due to the electrons of Ti 3d and Co 3d of the valence band (VB) shifting away from the Fermi level. Our calculation indicates that TiCoSb has the large density of state near the Fermi level; moreover, the changes of the density of states near the Fermi level mainly are caused by Ti 3d and Co 3d under the different pressures. It is noted that the absorption edge increases with an increase of pressure. As pressure increases, the static dielectric constants {epsilon}{sub 1}(0) decrease. All peaks of the imaginary part of the dielectric function {epsilon}{sub 2}({omega}) move towards higher energies within increasing pressure. - Graphical abstract: The first peak positions of the absorption spectrum increase and shift the high energy with an increase of pressure. The buleshift of the absorption edge could be observed. Highlights: Black-Right-Pointing-Pointer It is noted that the increase of the band gap is due to the electrons of Ti 3d and Co 3d of VB moving away from the Fermi level. Black-Right-Pointing-Pointer It is noted that the absorption edge increases with an increase of pressure. Black-Right-Pointing-Pointer As pressure increases, the static dielectric constant {epsilon}{sub 1}(0) decreases. Black-Right-Pointing-Pointer All peaks of the imaginary part of the dielectric function {epsilon}{sub 2}({omega}) move to wards higher energies within creasing pressure.

  5. Structural, electronic and optical properties of La{sub x}Sc{sub 1-x}Sb alloys

    SciTech Connect (OSTI)

    Ghezali, M.

    2015-03-30

    We present calculations of the structural, electronic and optic properties of LaxSc1-xSb ternary alloys for 0?x?1, by using the first principle full potential linear muffin-tin orbital (FPLMTO) method based on the local density approximation (LDA). the lattice constant, bulk modulus, electronic band structures, density of state and optical properties such as dielectric functions, refractive index and extinction coefficient are calculated and discussed for (x=0.25, 0.5 and 0.75). Our results agree well with the available data in the literature.

  6. Ab initio density functional theory investigation of the structural, electronic and optical properties of Ca{sub 3}Sb{sub 2} in hexagonal and cubic phases

    SciTech Connect (OSTI)

    Arghavani Nia, Borhan; Sedighi, Matin; Shahrokhi, Masoud; Moradian, Rostam

    2013-11-15

    A density functional theory study of structural, electronical and optical properties of Ca{sub 3}Sb{sub 2} compound in hexagonal and cubic phases is presented. In the exchangecorrelation potential, generalized gradient approximation (PBE-GGA) has been used to calculate lattice parameters, bulk modulus, cohesive energy, dielectric function and energy loss spectra. The electronic band structure of this compound has been calculated using the above two approximations as well as another form of PBE-GGA, proposed by Engle and Vosko (EV-GGA). It is found that the hexagonal phase of Ca{sub 3}Sb{sub 2} has an indirect gap in the ??N direction; while in the cubic phase there is a direct-gap at the ? point in the PBE-GGA and EV-GGA. Effects of applying pressure on the band structure of the system studied and optical properties of these systems were calculated. - Graphical abstract: A density functional theory study of structural, electronic and optical properties of Ca{sub 3}Sb{sub 2} compound in hexagonal and cubic phases is presented. Display Omitted - Highlights: Physical properties of Ca{sub 3}Sb{sub 2} in hexagonal and cubic phases are investigated. It is found that the hexagonal phase is an indirect gap semiconductor. Ca{sub 3}Sb{sub 2} is a direct-gap semiconductor at the ? point in the cubic phase. By increasing pressure the semiconducting band gap and anti-symmetry gap are decreased.

  7. Spectral behavior of the optical constants in the visible/near infrared of GeSbSe chalcogenide thin films grown at glancing angle

    SciTech Connect (OSTI)

    Martin-Palma, R. J.; Ryan, Joseph V.; Pantano, C. G.

    2007-04-23

    GeSbSe chalcogenide thin films were deposited using glancing angle deposition onto transparent glass substrates for the determination of the spectral behavior of the optical constants (index of refraction n and extinction coefficient k) in the visible and near infrared ranges (400-2500 nm) as a function of the deposition angle. Computational simulations based on the matrix method were employed to determine the values of the optical constants of the different films from the experimental reflectance and transmittance spectra. A significant dependence of the overall optical behavior on the deposition angle is found. Furthermore, the band gap of the GeSbSe thin films was calculated. The accurate determination of the optical constants of films grown at glancing angle will enable the development of sculptured thin film fiber-optic chemical sensors and biosensors.

  8. Femtosecond laser-induced crystallization of amorphous Sb{sub 2}Te{sub 3} film and coherent phonon spectroscopy characterization and optical injection of electron spins

    SciTech Connect (OSTI)

    Li Simian; Huang Huan; Wang Yang; Wu Yiqun; Gan Fuxi; Zhu Weiling; Wang Wenfang; Chen Ke; Yao Daoxin; Lai Tianshu

    2011-09-01

    A femtosecond laser-irradiated crystallizing technique is tried to convert amorphous Sb{sub 2}Te{sub 3} film into crystalline film. Sensitive coherent phonon spectroscopy (CPS) is used to monitor the crystallization of amorphous Sb{sub 2}Te{sub 3} film at the original irradiation site. The CPS reveals that the vibration strength of two phonon modes that correspond to the characteristic phonon modes (A{sub 1g}{sup 1} and E{sub g}) of crystalline Sb{sub 2}Te{sub 3} enhances with increasing laser irradiation fluence (LIF), showing the rise of the degree of crystallization with LIF and that femtosecond laser irradiation is a good post-treatment technique. Time-resolved circularly polarized pump-probe spectroscopy is used to investigate electron spin relaxation dynamics of the laser-induced crystallized Sb{sub 2}Te{sub 3} film. Spin relaxation process indeed is observed, confirming the theoretical predictions on the validity of spin-dependent optical transition selection rule and the feasibility of transient spin-grating-based optical detection scheme of spin-plasmon collective modes in Sb{sub 2}Te{sub 3}-like topological insulators.

  9. Effect of hydrogenation on the electrical and optical properties of GaSb

    SciTech Connect (OSTI)

    Dutta, P.S.; Bhat, H.L.; Kumar, V.

    1996-12-31

    The effect of hydrogen plasma treatment on the optical and electrical properties of Gallium Antimonide bulk single crystals is presented. Plasma exposure gives rise to a layer of defects on the surface. These defects introduce multiple trap levels in the band gap from which a slow emission of carriers is observed during the capacitance-voltage measurements. On removal of the defect layer by controlled etching, the effects of hydrogen passivation are seen. The results of optical measurements indicate that passivation of shallow acceptors is more efficient than that of the donors and in general the passivation efficiency depends on the doping level. Passivation of deep levels and extended defects like grain boundaries and dislocations has also been observed. The thermal stability of the passivated deep level and extended defects is higher than that of the shallow level.

  10. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  11. SB 1149 Schools Program

    Office of Energy Efficiency and Renewable Energy (EERE)

    Oregon's retail electricity restructuring law, SB 1149, includes a requirement for the state's two largest utilities, Pacific Power and Portland General Electric, to collect a 3% public purpose...

  12. The Precipitation of Sb2Te3 in Sb-rich AgSbTe2 via the Intermediate...

    Office of Scientific and Technical Information (OSTI)

    Title: The Precipitation of Sb2Te3 in Sb-rich AgSbTe2 via the Intermediate Phase (AgSb)3Te4. Abstract not provided. Authors: Sugar, Joshua Daniel ; Medlin, Douglas L. Publication ...

  13. Interband magneto-spectroscopy in InSb square and parabolic quantum wells

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Interband magneto-spectroscopy in InSb square and parabolic quantum wells Citation Details In-Document Search Title: Interband magneto-spectroscopy in InSb square and parabolic quantum wells We measure the magneto-optical absorption due to intersubband optical transitions between conduction and valence subband Landau levels in InSb square and parabolic quantum wells. InSb has the narrowest band gap (0.24 eV at low temperature) of the III-V semiconductors

  14. Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Liu, Shi; Li, Hua; Cellek, Oray O.; Ding, Ding; Lin, Zhi-Yuan; Steenbergen, Elizabeth H.; He, Zhao-Yu; Johnson, Shane R.; Zhang, Yong-Hang; Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 ; Shen, Xiao-Meng; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 ; Fan, Jin; Smith, David J.; Department of Physics, Arizona State University, Tempe, Arizona 85287 ; Lu, Jing

    2013-02-18

    Molecular beam epitaxial growth of strain-balanced InAs/InAs{sub 1-x}Sb{sub x} type-II superlattices on GaSb substrates has been investigated for substrate temperatures from 400 Degree-Sign C to 450 Degree-Sign C. The Sb composition is found to vary linearly with substrate temperature at constant V/III ratios. For samples grown at the optimized substrate temperature (410 Degree-Sign C), superlattice zero-order peak full-width at half-maximums are routinely less than 25 arc sec using high-resolution X-ray diffraction. Cross-sectional transmission electron microscopy images show the absence of any visible defects. Strong photoluminescence covers a wavelength range from 5.5 to 13 {mu}m at 12 K. Photoluminescence linewidth simulations show satisfactory agreement with experiments.

  15. CRAD, NNSA- Safety Basis (SB)

    Broader source: Energy.gov [DOE]

    CRAD for Safety Basis (SB). Criteria Review and Approach Documents (CRADs) that can be used to conduct a well-organized and thorough assessment of elements of safety and health programs.

  16. The Precipitation of Sb2Te3 in Sb-rich AgSbTe2 via the Intermediate Phase

    Office of Scientific and Technical Information (OSTI)

    (AgSb)3Te4. (Journal Article) | SciTech Connect The Precipitation of Sb2Te3 in Sb-rich AgSbTe2 via the Intermediate Phase (AgSb)3Te4. Citation Details In-Document Search Title: The Precipitation of Sb2Te3 in Sb-rich AgSbTe2 via the Intermediate Phase (AgSb)3Te4. Abstract not provided. Authors: Sugar, Joshua Daniel ; Medlin, Douglas L. Publication Date: 2010-07-01 OSTI Identifier: 1124220 Report Number(s): SAND2010-5024J 492792 DOE Contract Number: DE-AC04-94AL85000 Resource Type: Journal

  17. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    SciTech Connect (OSTI)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-26

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are {approx}10% lower than the predicted semi-empirical limit to open circuit voltage for a device having absorbing substrate; the voltages are {approx}17% below that for an Auger-limited device having back surface reflector and two-pass optical design.

  18. Ultrafast terahertz-induced response of GeSbTe phase-change materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect terahertz-induced response of GeSbTe phase-change materials Citation Details In-Document Search Title: Ultrafast terahertz-induced response of GeSbTe phase-change materials The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap

  19. High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

    SciTech Connect (OSTI)

    Petukhov, A. A., E-mail: andrey-rus29@rambler.ru; Zhurtanov, B. E.; Kalinina, K. V.; Stoyanov, N. D.; Salikhov, H. M.; Mikhailova, M. P.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-09-15

    The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.

  20. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  1. Phase transitions in Ge-Sb phase change materials

    SciTech Connect (OSTI)

    Raoux, Simone; Virwani, Kumar; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-03-15

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T{sub x}) also show an increase with Ge concentration closely tracking the measured values of T{sub x}. For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity.

  2. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  3. Method of making an InAsSb/InAsSbP diode lasers

    DOE Patents [OSTI]

    Razeghi, Manijeh (Wilmette, IL)

    1997-01-01

    InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer.

  4. Temperature dependence of the dielectric response of AlSb

    SciTech Connect (OSTI)

    Jung, Y. W.; Kim, T. J.; Kim, Y. D.; Shin, S. H.; Kim, S. Y.; Song, J. D.

    2011-12-23

    Spectroscopic ellipometry was used to determine the optical response of an intrinsic AlSb film as a function of temperature. The 1.5 {mu}m thick film was grown on a (001) GaAs substrate by molecular beam epitaxy. Measurements were done at temperatures from 300 K to the growth temperature of 800 K over a spectral range of 0.7 to 5.0 eV. To avoid oxidation artifacts, measurements were done with the film in situ. The data were analyzed using a parametric semiconductor model for its temperature dependence.

  5. SbSI nanocrystal formation in AsSbSI glass under laser beam

    SciTech Connect (OSTI)

    Azhniuk, Yu.M.; Stoyka, V.; Petryshynets, I.; Rubish, V.M.; Guranich, O.G.; Gomonnai, A.V.; Zahn, D.R.T.

    2012-06-15

    Highlights: ? AsSbSI glasses are obtained by co-melting of As{sub 2}S{sub 3} and SbSI. ? The glass structure and composition are confirmed by SEM, EDX, and Raman studies. ? Laser-induced crystallization of SbSI from the glass is observed by Raman spectroscopy. -- Abstract: AsSbSI glasses are obtained by co-melting of As{sub 2}S{sub 3} and SbSI in a broad compositional interval. Their structure and composition are confirmed by the studies of scanning electron microscopy, energy dispersive X-ray spectroscopy, and micro-Raman scattering. Laser-induced crystallization of SbSI crystallites from the glass matrix is observed in the course of the micro-Raman measurement as a result of local laser beam heating.

  6. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect (OSTI)

    Vajargah, S. Hosseini; Botton, G. A.; Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1; Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 ; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.; Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7; Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7

    2013-09-21

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  7. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOE Patents [OSTI]

    Spahn, O.B.; Lear, K.L.

    1998-03-10

    The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

  8. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOE Patents [OSTI]

    Spahn, Olga B. (Albuquerque, NM); Lear, Kevin L. (Albuquerque, NM)

    1998-01-01

    A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

  9. Ras-GTP dimers activate the mitogen-activated protein kinase (MAPK) pathway

    SciTech Connect (OSTI)

    Nan, Xiaolin; Tamgney, Tanja M.; Collisson, Eric A.; Lin, Li -Jung; Pitt, Cameron; Galeas, Jacqueline; Lewis, Sophia; Gray, Joe W.; McCormick, Frank; Chu, Steven

    2015-06-16

    Rat sarcoma (Ras) GTPases regulate cell proliferation and survival through effector pathways including Raf-MAPK, and are the most frequently mutated genes in human cancer. Although it is well established that Ras activity requires binding to both GTP and the membrane, details of how Ras operates on the cell membrane to activate its effectors remain elusive. Efforts to target mutant Ras in human cancers to therapeutic benefit have also been largely unsuccessful. Here we show that Ras-GTP forms dimers to activate MAPK. We used quantitative photoactivated localization microscopy (PALM) to analyze the nanoscale spatial organization of PAmCherry1-tagged KRas 4B (hereafter referred to KRas) on the cell membrane under various signaling conditions. We found that at endogenous expression levels KRas forms dimers, and KRasG12D, a mutant that constitutively binds GTP, activates MAPK. Overexpression of KRas leads to formation of higher order Ras nanoclusters. Conversely, at lower expression levels, KRasG12D is monomeric and activates MAPK only when artificially dimerized. Moreover, dimerization and signaling of KRas are both dependent on an intact CAAX (C, cysteine; A, aliphatic; X, any amino acid) motif that is also known to mediate membrane localization. These results reveal a new, dimerization-dependent signaling mechanism of Ras, and suggest Ras dimers as a potential therapeutic target in mutant Ras-driven tumors.

  10. Ras-GTP dimers activate the mitogen-activated protein kinase (MAPK) pathway

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Nan, Xiaolin; Tamgüney, Tanja M.; Collisson, Eric A.; Lin, Li -Jung; Pitt, Cameron; Galeas, Jacqueline; Lewis, Sophia; Gray, Joe W.; McCormick, Frank; Chu, Steven

    2015-06-16

    Rat sarcoma (Ras) GTPases regulate cell proliferation and survival through effector pathways including Raf-MAPK, and are the most frequently mutated genes in human cancer. Although it is well established that Ras activity requires binding to both GTP and the membrane, details of how Ras operates on the cell membrane to activate its effectors remain elusive. Efforts to target mutant Ras in human cancers to therapeutic benefit have also been largely unsuccessful. Here we show that Ras-GTP forms dimers to activate MAPK. We used quantitative photoactivated localization microscopy (PALM) to analyze the nanoscale spatial organization of PAmCherry1-tagged KRas 4B (hereafter referredmore » to KRas) on the cell membrane under various signaling conditions. We found that at endogenous expression levels KRas forms dimers, and KRasG12D, a mutant that constitutively binds GTP, activates MAPK. Overexpression of KRas leads to formation of higher order Ras nanoclusters. Conversely, at lower expression levels, KRasG12D is monomeric and activates MAPK only when artificially dimerized. Moreover, dimerization and signaling of KRas are both dependent on an intact CAAX (C, cysteine; A, aliphatic; X, any amino acid) motif that is also known to mediate membrane localization. These results reveal a new, dimerization-dependent signaling mechanism of Ras, and suggest Ras dimers as a potential therapeutic target in mutant Ras-driven tumors.« less

  11. Ras Al Khaimah (RAK): World Oil Report 1991

    SciTech Connect (OSTI)

    Not Available

    1991-08-01

    This paper reports on Ras Al Khalmah (RAK) that had no drilling activity in 1990. In 1991, International Petroleum Ltd., (IPL), which holds a 1,100 sq mi concession onshore, may spud their West Jiri prospect. Amoco holds an offshore concession and was to have completed seismic last year. the RAK Gas Commission was reported to be operating the offshore Saleh gas field in 1990, which a former foreign concessionaire relinquished in mid-1989 since it had reached its economic limit. Production from Saleh last year is estimated at 1,000 bcpd and about 9 MMcfgd.

  12. Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry

    SciTech Connect (OSTI)

    Webster, P. T.; Riordan, N. A.; Liu, S.; Zhang, Y.-H.; Johnson, S. R.; Steenbergen, E. H.

    2015-02-09

    Strain-balanced InAs/InAsSb superlattices offer access to the mid- to long-wavelength infrared region with what is essentially a ternary material system at the GaSb lattice constant. The absorption coefficients of InAs/InAsSb superlattices grown by molecular beam epitaxy on (100)-oriented GaSb substrates are measured at room temperature over the 30 to 800?meV photon energy range using spectroscopic ellipsometry, and the miniband structure of each superlattice is calculated using a Kronig-Penney model. The InAs/InAsSb conduction band offset is used as a fitting parameter to align the calculated superlattice ground state transition energy to the measured absorption onset at room temperature and to the photoluminescence peak energy at low temperature. It is observed that the ground state absorption coefficient and transition strength are proportional to the square of the wavefunction overlap and the ground state absorption coefficient approaches a maximum value of around 5780?cm{sup ?1} as the wavefunction overlap approaches 100%. The absorption analysis of these samples indicates that the optical joint density of states is weakly dependent on the period thickness and Sb content of the superlattice, and that wavefunction overlap is the principal design parameter in terms of obtaining strong absorption in these structures.

  13. DWPF simulant CPC studies for SB8

    SciTech Connect (OSTI)

    Koopman, D. C.; Zamecnik, J. R.

    2013-06-25

    The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing recommendations for DWPF along with some data related to Safety Class documentation at DWPF. Some significant observations regarding SB8 follow: Reduced washing in Tank 51 led to an increase in the wt.% soluble solids of the DWPF feed. If wt.% total solids for the SRAT and SME product werent adjusted upward to maintain insoluble solids levels similar to past sludge batches, then the rheological properties of the slurry went below the low end of the DWPF design bases for the SRAT and SME. Much higher levels of dissolved manganese were found in the SRAT and SME products than in recent sludge batches. Closed crucible melts were more reduced than expected. The working hypothesis is that the soluble Mn is less oxidizing than assumed in the REDOX calculations. A change in the coefficient for Mn in the REDOX equation was recommended in a separate report. The DWPF (Hsu) stoichiometric acid equation was examined in detail to better evaluate how to control acid in DWPF. The existing DWPF equation can likely be improved without changing the required sample analyses through a paper study using existing data. The recommended acid stoichiometry for initial SB8 SRAT batches is 115-120% stoichiometry until some processing experience is gained. The conservative range (based on feed properties) of stoichiometric factors derived in this study was from 110-147%, but SRNL recommends using only the lower half of this range, 110-126% even after initial batches provide processing experience. The stoichiometric range for sludge-only processing appears to be suitable for coupled operation based on results from the run in the middle of the range. Catalytic hydrogen was detectable (>0.005 vol%) in all SRAT and SME cycles. Hydrogen reached 30-35% of the SRAT and SME limits at the mid-point of the stoichiometry window (bounding noble metals and acid demand).

  14. Properties of Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} thin films obtained by pulsed laser ablation

    SciTech Connect (OSTI)

    Virt, I. S.; Rudyj, I. O.; Kurilo, I. V.; Lopatynskyi, I. Ye.; Linnik, L. F.; Tetyorkin, V. V.; Potera, P.; Luka, G.

    2013-07-15

    The properties of Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} thin films of variable thickness deposited onto Al{sub 2}O{sub 3}, Si, and KCl substrates are investigated by the method of pulsed laser ablation. The samples are obtained at a substrate temperature of 180 Degree-Sign C in a vacuum chamber with a residual pressure of 10{sup -5} Torr. The thickness of the films amounted to 40-1500 nm. The structure of the bulk material of the targets and films is investigated by the methods of X-ray diffraction and transmission high-energy electron diffraction, respectively. The electrical properties of the films are investigated in the temperature range of 253-310 K. It is shown that the films have semiconductor properties. The structural features of the films determine their optical parameters.

  15. Characterization of a Ras Mutant with Identical GDP- and GTP-Bound Structures

    SciTech Connect (OSTI)

    Ford, B.; Boykevisch, S; Zhao, C; Kunzelmann, S; Bar-Sagi, D; Herrmann, C; Nassar, N

    2009-01-01

    We previously characterized the G60A mutant of Ras and showed that the switch regions of the GTP-bound but not the GDP-bound form of this mutant adopt an 'open conformation' similar to that seen in nucleotide-free Ras. Here, we mutate Lys147 of the conserved {sup 145}SAK{sup 147} motif in the G60A background and characterize the resulting double mutant (DM). We show that RasDM is the first structure of a Ras protein with identical GDP- and GTP-bound structures. Both structures adopt the open conformation of the active form of RasG60A. The increase in the accessible surface area of the nucleotide is consistent with a 4-fold increase in its dissociation rate. Stopped-flow experiments show no major difference in the two-step kinetics of association of GDP or GTP with the wild type, G60A, or RasDM. Addition of Sos fails to accelerate nucleotide exchange. Overexpression of the G60A or double mutant of Ras in COS-1 cells fails to activate Erk and shows a strong dominant negative effect. Our data suggest that flexibility at position 60 is required for proper Sos-catalyzed nucleotide exchange and that structural information is somehow shared among the switch regions and the different nucleotide binding motifs.

  16. Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well

    Office of Scientific and Technical Information (OSTI)

    lasers on InP substrate (Journal Article) | SciTech Connect Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate Citation Details In-Document Search Title: Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate We have demonstrated experimentally the InP-based "M"-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 μm at room temperature by optical pumping. The threshold power density

  17. Self-Assembled ErSb Nanostructures with Optical Applications...

    Office of Scientific and Technical Information (OSTI)

    Country of Publication: United States Language: English Subject: solar (photovoltaic), solid state lighting, phonons, thermoelectric, bio-inspired, energy storage (including ...

  18. Interband magneto-spectroscopy in InSb square and parabolic quantum wells

    SciTech Connect (OSTI)

    Kasturiarachchi, T.; Edirisooriya, M.; Mishima, T. D.; Doezema, R. E.; Santos, M. B.; Saha, D.; Pan, X.; Sanders, G. D.; Stanton, C. J.

    2015-06-07

    We measure the magneto-optical absorption due to intersubband optical transitions between conduction and valence subband Landau levels in InSb square and parabolic quantum wells. InSb has the narrowest band gap (0.24 eV at low temperature) of the III–V semiconductors leading to a small effective mass (0.014 m{sub 0}) and a large g–factor (−51). As a result, the Landau level spacing is large at relatively small magnetic fields (<8 T), and one can observe spin-splitting of the Landau levels. We examine two structures: (i) a multiple-square-well structure and (ii) a structure containing multiple parabolic wells. The energies and intensities of the strongest features are well explained by a modified Pidgeon-Brown model based on an 8-band k•p model that explicitly incorporates pseudomorphic strain. The strain is essential for obtaining agreement between theory and experiment. While modeling the square well is relatively straight-forward, the parabolic well consists of 43 different layers of various thickness to approximate a parabolic potential. Agreement between theory and experiment for the parabolic well validates the applicability of the model to complicated structures, which demonstrates the robustness of our model and confirms its relevance for developing electronic and spintronic devices that seek to exploit the properties of the InSb band structure.

  19. Structure of the Dominant Negative S17N Mutant of Ras

    SciTech Connect (OSTI)

    Nassar, N.; Singh, K; Garcia-Diaz, M

    2010-01-01

    The use of the dominant negative mutant of Ras has been crucial in elucidating the cellular signaling of Ras in response to the activation of various membrane-bound receptors. Although several point mutants of Ras exhibit a dominant negative effect, the asparagine to serine mutation at position 17 (S17N) remains the most popular and the most effective at inhibiting the activation of endogenous Ras. It is now widely accepted that the dominant negative effect is due to the ability of the mutant to sequester upstream activators and its inability to activate downstream effectors. Here, we present the crystal structure of RasS17N in the GDP-bound form. In the three molecules that populate the asymmetric unit, the Mg{sup 2+} ion that normally coordinates the {beta}-phosphate is absent because of steric hindrance from the Asn17 side chain. Instead, a Ca{sup 2+} ion is coordinating the {alpha}-phosphate. Also absent from one molecule is electron density for Phe28, a conserved residue that normally stabilizes the nucleotide's guanine base. Except for Phe28, the nucleotide makes conserved interactions with Ras. Combined, the inability of Phe28 to stabilize the guanine base and the absence of a Mg{sup 2+} ion to neutralize the negative charges on the phosphates explain the weaker affinity of GDP for Ras. Our data suggest that the absence of the Mg{sup 2+} should also dramatically affect GTP binding to Ras and the proper positioning of Thr35 necessary for the activation of switch 1 and the binding to downstream effectors, a prerequisite for the triggering of signaling pathways.

  20. DWPF Simulant CPC Studies For SB8

    SciTech Connect (OSTI)

    Newell, J. D.

    2013-09-25

    Prior to processing a Sludge Batch (SB) in the Defense Waste Processing Facility (DWPF), flowsheet studies using simulants are performed. Typically, the flowsheet studies are conducted based on projected composition(s). The results from the flowsheet testing are used to 1) guide decisions during sludge batch preparation, 2) serve as a preliminary evaluation of potential processing issues, and 3) provide a basis to support the Shielded Cells qualification runs performed at the Savannah River National Laboratory (SRNL). SB8 was initially projected to be a combination of the Tank 40 heel (Sludge Batch 7b), Tank 13, Tank 12, and the Tank 51 heel. In order to accelerate preparation of SB8, the decision was made to delay the oxalate-rich material from Tank 12 to a future sludge batch. SB8 simulant studies without Tank 12 were reported in a separate report.1 The data presented in this report will be useful when processing future sludge batches containing Tank 12. The wash endpoint target for SB8 was set at a significantly higher sodium concentration to allow acceptable glass compositions at the targeted waste loading. Four non-coupled tests were conducted using simulant representing Tank 40 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry (146% acid) SRAT testing up to 31% of the DWPF hydrogen limit. SME hydrogen generation reached 48% of of the DWPF limit for the high acid run. Two non-coupled tests were conducted using simulant representing Tank 51 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry SRAT testing up to 16% of the DWPF limit. SME hydrogen generation reached 49% of the DWPF limit for hydrogen in the SME for the high acid run. Simulant processing was successful using previously established antifoam addition strategy. Foaming during formic acid addition was not observed in any of the runs. Nitrite was destroyed in all runs and no N2O was detected during SME processing. Mercury behavior was consistent with that seen in previous SRAT runs. Mercury was stripped below the DWPF limit on 0.8 wt% for all runs. Rheology yield stress fell within or below the design basis of 1-5 Pa. The low acid Tank 40 run (106% acid stoichiometry) had the highest yield stress at 3.78 Pa.

  1. Qatargas exporting LNG from Qatar`s new Ras Laffan Port

    SciTech Connect (OSTI)

    1997-02-24

    When the 135,000 cu m LNG carrier Al Zubarah departed Ras Laffan Port in December, Qatar entered a new era of commerce that will both boost the emirate`s economic development and influence energy trade around the world. The event capped more than a decade of planning, design, and construction of Ras Laffan Port--the world`s newest and largest LNG exporting facility. During the 1980s, the focus in Qatar was on exploration and development of North field, which holds the world`s largest reserves of nonassociated natural gas. In the 1990s, efforts concentrated on establishing a direct production and export link between North field, the new multi-billion-dollar Qatar Liquefied Gas Co. (Qatargas) gas liquefaction plant at Ras Laffan, and LNG export facilities at the 8.5 sq km Ras Laffan Port. Markets of the Far East will be first to be served by LNG from Ras Laffan Port. Two 25-year LNG supply contracts have been signed with buyers in Japan and South Korea, and negotiations are under way with potential customers from China, Taiwan, and Thailand. The paper describes the port, its operations, and export projects.

  2. Soft chemical synthesis of Ag{sub 3}SbS{sub 3} with efficient and recyclable visible light photocatalytic properties

    SciTech Connect (OSTI)

    Gusain, Meenakshi; Rawat, Pooja; Nagarajan, Rajamani

    2014-12-15

    Highlights: Highly crystalline Ag{sub 3}SbS{sub 3} synthesized using soft chemical approach. First time report of photocatalytic activity of Ag{sub 3}SbS{sub 3}. Ag{sub 3}SbS{sub 3} degraded the harmful organic dyes rapidly under visible radiation. Pseudo first order kinetics have been followed in these sets of reactions. Up to 90% of Methylene Blue degraded even after 4th cycle of catalyst reuse. Structure of catalyst is intact after reuse. As the catalyst is heavy, its separation after use is quite simple. - Abstract: Application of Ag{sub 3}SbS{sub 3}, obtained by soft chemical approach involving rapid reaction of air stable metalthiourea complexes in ethylene glycol medium, as visible light photocatalyst for the degradation of dye solutions was investigated. Ag{sub 3}SbS{sub 3} was confirmed by high resolution powder X-ray diffraction pattern and its no defined morphology was present in SEM images. From UVvis spectroscopy measurements, optical band gap of 1.77 eV was deduced for Ag{sub 3}SbS{sub 3}. Rapid degradation kinetics and recyclability was exhibited by Ag{sub 3}SbS{sub 3} towards Methylene Blue, Methyl Orange, Malachite Green, and Rhodamine 6G dye solutions under visible radiation. All these processes followed pseudo first order kinetics. High surface area (6.39 m{sup 2}/g), with mesopores (3.81 nm), arising from solvent mediated synthesis of Ag{sub 3}SbS{sub 3} has been correlated to its catalytic activity.

  3. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  4. Fragile structural transition in Mo3Sb7

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yan, Jiaqiang -Q.; McGuire, Michael A; May, Andrew F; Parker, David S.; Mandrus, D. G.; Sales, Brian C.

    2015-08-10

    Mo3Sb7 single crystals lightly doped with Cr, Ru, or Te are studied in order to explore the interplay between superconductivity, magnetism, and the cubic-tetragonal structural transition. The structural transition at 53 K is extremely sensitive to Ru or Te substitution which introduces additional electrons, but robust against Cr substitution. We observed no sign of a structural transition in superconducting Mo2.91Ru0.09Sb7 and Mo3Sb6.975Te0.025. In contrast, 3 at.% Cr doping only slightly suppresses the structural transition to 48 K while leaving no trace of superconductivity above 1.8 K. Analysis of magnetic properties suggests that the interdimer interaction in Mo3Sb7 is near amorecritical value and essential for the structural transition. Futhermore, all dopants suppress the superconductivity of Mo3Sb7. The tetragonal structure is not necessary for superconductivity.less

  5. Coupling Between An Optical Phonon and the Kondo Effect

    SciTech Connect (OSTI)

    Burch, Kenneth; Chia, Elbert E. M.; Talbayev, D.; Sales, Brian C; Mandrus, David; Taylor, A. J.; Averitt, R. D.

    2008-01-01

    We explore the ultrafast optical response of Yb14MnSb11, providing further evidence that this Zintl compound is one of the first examples of a ferromagnetic under-screened Kondo lattice. These experiments also provide the first demonstration of coupling between an optical phonon and the Kondo effect.

  6. The reaction mechanism of SnSb and Sb thin film anodes for Na-ion batteries studied by X-ray diffraction, 119Sn and 121Sb M ssbauer spectroscopies

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Baggetto, Loic; Hah, Hien-Yoong; Jumas, Dr. Jean-Claude; Johnson, Prof. Dr. Charles E.; Johnson, Jackie A.; Keum, Jong Kahk; Bridges, Craig A; Veith, Gabriel M

    2014-01-01

    The electrochemical reaction of Sb and SnSb anode materials with Na results in the formation of amorphous materials. To understand the resulting phases and electrochemical capacities we studied the reaction products local order using 119Sn and 121Sb M ssbauer spectroscopies in conjunction with measurements performed on model powder compounds of Na-Sn and Na-Sb to further clarify the reactions steps. For pure Sb the discharge (sodiation) starts with the formation of an amorphous phase composed of atomic environments similar to those found in NaSb, and proceeds further by the formation of environments similar to that present in Na3Sb. The reversible reactionmore » takes place during a large portion of the charge process. At full charge the anode material still contains a substantial fraction of Na, which explains the lack of recrystallization into crystalline Sb. The reaction of SnSb yields Na3Sb crystalline phase at full discharge at higher temperatures (65 and 95 C) while the room temperature reaction yields amorphous compounds. The electrochemically-driven, solid-state amorphization reaction occurring at room temperature is governed by the simultaneous formation of Na-coordinated Sn and Sb environments, as monitored by the decrease (increase) of the 119Sn (121Sb) M ssbauer isomer shifts. Overall, the monitoring of the hyperfine parameters enables to correlate the changes in Na content to the individual Sn and Sb local chemical environments.« less

  7. Anisotropic giant magnetoresistance in NbSb?

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.

    2014-12-05

    We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 10?% in 2 K and 9 T field, and 4.3 10?% in 0.4 K and 32 T field, without saturation) and field-induced metal semiconductor-like transition in NbSb?. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed tomorethe change of the Fermi surface induced by the magnetic field in addition to the high mobility metal.less

  8. Anisotropic giant magnetoresistance in NbSb?

    SciTech Connect (OSTI)

    Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.

    2014-12-05

    We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 10?% in 2 K and 9 T field, and 4.3 10?% in 0.4 K and 32 T field, without saturation) and field-induced metal semiconductor-like transition in NbSb?. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field in addition to the high mobility metal.

  9. 1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cloud Amount of Midlatitude Continental Clouds in Tomsk Region: Preliminary Results T.B. Zhuravleva, T.M. Rasskazchikova, and T.K. Sklyadneva Institute of Atmospheric Optics SB RAS Tomsk, Russia S.V. Smirnov Institute of Monitoring of Climatic and Ecological Systems SB RAS Tomsk, Russia The Atmospheric Radiation Measurement (ARM) Program provides concentrated measurements of surface radiative budget as well as measurements of the atmospheric constituents including clouds, aerosols, water vapor,

  10. Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Olson, Benjamin Varberg; Haugan, Heather J.; Brown, Gail J.; Kadlec, Emil Andrew; Kim, Jin K.; Shaner, Eric A.

    2016-02-02

    Here, significantly improved carrier lifetimes in very-long wave infrared InAs/GaInSb superlattice(SL) absorbers are demonstrated by using time-resolved microwave reflectance (TMR) measurements. A nominal 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb SLstructure that produces an approximately 25 μm response at 10 K has a minority carrier lifetime of 140 ± 20 ns at 18 K, which is markedly long for SL absorber with such a narrow bandgap. This improvement is attributed to the strain-engineered ternary design. Such SL employs a shorter period with reduced gallium in order to achieve good optical absorption and epitaxial advantages, which ultimately leads to the improvements in themore » minority carrier lifetime by reducing Shockley–Read–Hall (SRH) defects. By analyzing the temperature-dependence of TMR decay data, the recombination mechanisms and trap states that currently limit the performance of this SL absorber have been identified. The results show a general decrease in the long-decay lifetime component, which is dominated by the SRH recombination at temperature below ~30 K, and by Auger recombination at temperatures above ~45 K.« less

  11. TANK 40 FINAL SB6 CHEMICAL CHARACTERIZATION RESULTS

    SciTech Connect (OSTI)

    Bannochie, C.

    2010-08-13

    A sample of Sludge Batch 6 (SB6) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS), and a portion of the sample was designated for SB6 processing studies. The SB6 WAPS sample was also analyzed for chemical composition including noble metals and fissile composition, and these results are reported here. These analyses along with the WAPS radionuclide analyses will help define the composition of the sludge in Tank 40 that is currently being fed to DWPF as SB6. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB6 sample was transferred from the shipping container into a 4-L high density polyethylene vessel and solids were allowed to settle overnight. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 485 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples.

  12. Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy

    SciTech Connect (OSTI)

    Kim, T. W.; Mawst, L. J.; Kim, K.; Lee, J. J.; Kuech, T. F.; Wells, N. P.; LaLumondiere, S. D.; Sin, Y.; Lotshaw, W. T.; Moss, S. C.

    2014-02-03

    Two different thermal annealing techniques (rapid thermal annealing (RTA) and in-situ post-growth annealing in the metalorganic vapor phase epitaxy (MOVPE) chamber) were employed to investigate their impact on the optical characteristics of double-heterostructures (DH) of InGaAsSbN/GaAs and on the performance of single-junction solar cell structures, all grown by MOVPE. We find that an optimized RTA procedure leads to a similar improvement in the photoluminescence (PL) intensity compared with material employing a multi-step optimized anneal within the MOVPE reactor. Time-resolved photoluminescence techniques at low temperature (LT) and room temperature (RT) were performed to characterize the carrier dynamics in bulk InGaAsSbN layers. Room temperature carrier lifetimes were found to be similar for both annealing methods, although the LT-PL (16?K) measurements of the MOVPE-annealed sample found longer lifetimes than the RTA-annealed sample (680?ps vs. 260?ps) for the PL measurement energy of 1.24?eV. InGaAsSbN-based single junction solar cells processed with the optimized RTA procedure exhibited an enhancement of the electrical performance, such as improvements in open circuit voltage, short circuit current, fill factor, and efficiency over solar cells subjected to the in-situ MOVPE annealing technique.

  13. Low temperature thermoelectric properties of Co0.9Fe0.1Sb3-based...

    Office of Scientific and Technical Information (OSTI)

    Low temperature thermoelectric properties of Co0.9Fe0.1Sb3-based skutterudite nanocomposites with FeSb2 nanoinclusions Citation Details In-Document Search Title: Low temperature ...

  14. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  15. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  16. Ultrafast terahertz-induced response of GeSbTe phase-change materials

    SciTech Connect (OSTI)

    Shu, Michael J.; Zalden, Peter; Chen, Frank; Weems, Ben; Chatzakis, Ioannis; Xiong, Feng; Jeyasingh, Rakesh; Pop, Eric; Philip Wong, H.-S.; Hoffmann, Matthias C.; Wuttig, Matthias; Lindenberg, Aaron M.

    2014-06-23

    The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap transmission as a probe of the electronic and structural response below the switching threshold, we observe a field-induced heating of the carrier system and resolve the picosecond-time-scale energy relaxation processes and their dependence on the sample annealing condition in the crystalline phase. In the amorphous phase, an instantaneous electroabsorption response is observed, quadratic in the terahertz field, followed by field-driven lattice heating, with Ohmic behavior up to 200?kV/cm.

  17. SB Electronics Breaks Ground on New Factory | Department of Energy

    Energy Savers [EERE]

    SB Electronics Breaks Ground on New Factory SB Electronics Breaks Ground on New Factory April 29, 2010 - 5:22pm Addthis U.S. Rep. Peter Welch (from left), Vermont Lt. Gov. Brian Dubie, SBE board member Win Hunter, SBE board chair Stan Fishkin, Assi U.S. Rep. Peter Welch (from left), Vermont Lt. Gov. Brian Dubie, SBE board member Win Hunter, SBE board chair Stan Fishkin, Assi Paul Lester Paul Lester Digital Content Specialist, Office of Public Affairs A Vermont company broke ground on a new

  18. Optical Study of Interactions in a d-Electron Kondo Lattice with Ferromagnetism

    SciTech Connect (OSTI)

    Burch, K. S.; Schafgans, A.; Butch, N. P.; Sayles, T. A.; Maple, M. B.; Sales, Brian C; Mandrus, David; Basov, D. N.

    2005-01-01

    We report on a comprehensive optical, transport, and thermodynamic study of the Zintl compound Yb{sub 14}MnSb{sub 11}, demonstrating that it is the first ferromagnetic Kondo lattice compound in the underscreened limit. We propose a scenario whereby the combination of Kondo and Jahn-Teller effects provides a consistent explanation of both transport and optical data.

  19. Electronic inhomogeneity and Ag:Sb imbalance of Ag1-yPb18Sb1+zTe20

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    high-performance thermoelectrics elucidated by 125Te and 207Pb NMR | Energy Frontier Research Centers Electronic inhomogeneity and Ag:Sb imbalance of Ag1-yPb18Sb1+zTe20 high-performance thermoelectrics elucidated by 125Te and 207Pb NMR Home Author: E.M. Levin, B.A. Cook, K. Ahn, M.G. Kanatzidis, K. Schmidt-Rohr Year: 2009 Abstract: Using magic-angle spinning 125Te and 207Pb NMR, we have discovered the presence of two phases of approximately tenfold different free-electron concentration, n,

  20. Low temperature thermoelectric properties of Co0.9Fe0.1Sb3-based

    Office of Scientific and Technical Information (OSTI)

    skutterudite nanocomposites with FeSb2 nanoinclusions (Journal Article) | SciTech Connect Low temperature thermoelectric properties of Co0.9Fe0.1Sb3-based skutterudite nanocomposites with FeSb2 nanoinclusions Citation Details In-Document Search Title: Low temperature thermoelectric properties of Co0.9Fe0.1Sb3-based skutterudite nanocomposites with FeSb2 nanoinclusions Bulk thermoelectric nanocomposite materials have great potential to exhibit higher ZT due to effects arising from their

  1. Thermoelectric properties of Co0.9Fe0.1Sb3-based skutterudite

    Office of Scientific and Technical Information (OSTI)

    nanocomposites with FeSb2 nanoinclusions (Journal Article) | SciTech Connect Thermoelectric properties of Co0.9Fe0.1Sb3-based skutterudite nanocomposites with FeSb2 nanoinclusions Citation Details In-Document Search Title: Thermoelectric properties of Co0.9Fe0.1Sb3-based skutterudite nanocomposites with FeSb2 nanoinclusions Bulk thermoelectric nanocomposite materials have great potential to exhibit higher figure of merit due to effects arising from the nanostructure. In this paper, we report

  2. Scavenging Elemental Sb Through Addition of NbSb to Mm0.9Fe3.5Co0.5S12

    Office of Scientific and Technical Information (OSTI)

    Skutterudites (Journal Article) | SciTech Connect Scavenging Elemental Sb Through Addition of NbSb to Mm0.9Fe3.5Co0.5S12 Skutterudites Citation Details In-Document Search Title: Scavenging Elemental Sb Through Addition of NbSb to Mm0.9Fe3.5Co0.5S12 Skutterudites Authors: Zhang, Long ; Zhou, Chen ; Morelli, Donald T ; Sakamoto, Jeffrey Publication Date: 2012-02-07 OSTI Identifier: 1066320 DOE Contract Number: SC0001054 Resource Type: Journal Article Resource Relation: Journal Name: Journal of

  3. TANK 40 FINAL SB7B CHEMICAL CHARACTERIZATION RESULTS

    SciTech Connect (OSTI)

    Bannochie, C.

    2012-03-15

    A sample of Sludge Batch 7b (SB7b) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). The SB7b WAPS sample was also analyzed for chemical composition including noble metals and fissile constituents, and these results are reported here. These analyses along with the WAPS radionuclide analyses will help define the composition of the sludge in Tank 40 that is currently being fed to the Defense Waste Processing Facility (DWPF) as SB7b. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB7b sample was transferred from the shipping container into a 4-L high density polyethylene bottle and solids were allowed to settle over the weekend. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 558 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon{reg_sign} vessels and four with NaOH/Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Two Analytical Reference Glass - 1 (ARG-1) standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma - atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma - mass spectrometry (ICP-MS) analysis, atomic absorption spectroscopy (AA) for As and Se, and cold vapor atomic absorption spectroscopy (CV-AA) for Hg. Equivalent dilutions of the alkali fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB7b supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES, ion chromatography (IC), total base/free OH{sup -}/other base, total inorganic carbon/total organic carbon (TIC/TOC) analyses, and Cs-137 gamma scan. Weighted dilutions of slurry were submitted for IC, TIC/TOC, and total base/free OH{sup -}/other base analyses. Activities for U-233, U-235, and Pu-239 were determined from the ICP-MS data for the aqua regia digestions of the Tank 40 WAPS slurry using the specific activity of each isotope. The Pu-241 value was determined from a Pu-238/-241 method developed by SRNL AD and previously described. The following conclusions were drawn from the analytical results reported here: (1) The ratios of the major elements for the SB7b WAPS sample are different from those measured for the SB7a WAPS sample. There is less Al and Mn relative to Fe than the previous sludge batch. (2) The elemental composition of this sample and the analyses conducted here are reasonable and consistent with DWPF batch data measurements in light of DWPF pre-sample concentration and SRAT product heel contributions to the DWPF SRAT receipt analyses. The element ratios for Al/Fe, Ca/Fe, Mn/Fe, and U/Fe agree within 10% between this work and the DWPF Sludge Receipt and Adjustment Tank (SRAT) receipt analyses. (3) Sulfur in the SB7b WAPS sample is 82% soluble, slightly less than results reported for SB3, SB4, and SB6 samples but unlike the 50% insoluble sulfur observed in the SB5 WAPS sample. In addition, 23% of the soluble sulfur is not present as sulfate in SB7b. (4) The average activities of the fissile isotopes of interest in the SB7b WAPS sample are (in {mu}Ci/g of total dried solids): 4.22E-02 U-233, 6.12E-04 U-235, 1.08E+01 Pu-239, and 5.09E+01 Pu-241. The full radionuclide composition will be reported in a future document. (5) The fission product noble metal and Ag concentrations appear to have largely peaked in previous DWPF sludge batches, with the exception of Ru, which still shows a slight increase in SB7b.

  4. Influence of substituting Sn for Sb on the thermoelectric transport properties of CoSb{sub 3}-based skutterudites

    SciTech Connect (OSTI)

    Hui, Si; Nielsen, Michele D.; Homer, Mark R.; Medlin, Douglas L.; Tobola, Janusz; Salvador, James R.; Heremans, Joseph P.; Pipe, Kevin P.; Uher, Ctirad

    2014-03-14

    Band structure calculations that incorporate impurity effects suggest that a band resonant state may be formed in p-type CoSb{sub 3}-based skutterudites by replacing Sb atoms with Sn dopant atoms. Such resonant states have the potential to greatly improve thermoelectric energy conversion efficiency by increasing the density of states variation near the Fermi level, thereby increasing the Seebeck coefficient at a given carrier concentration. Through transport measurements of the Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient, we show that a practical band resonant state is not achieved by Sn doping. Compared to undoped CoSb{sub 3}, the dimensionless figure of merit (ZT) in Sn-doped CoSb{sub 3} is enhanced slightly at high temperatures to a value of 0.2, mostly due to a reduction in thermal conductivity. The Fermi level is calculated not to reach the band resonant state induced by Sn impurity atoms within the range of Sn concentrations examined here.

  5. Magnetic properties of MnSb inclusions formed in GaSb matrix directly during molecular beam epitaxial growth

    SciTech Connect (OSTI)

    Lawniczak-Jablonska, Krystyna; Wolska, Anna; Klepka, Marcin T.; Kret, Slawomir; Kurowska, Boguslawa; Kowalski, Bogdan J.; Twardowski, Andrzej; Wasik, Dariusz; Kwiatkowski, Adam; Sadowski, Janusz

    2011-04-01

    Despite of intensive search for the proper semiconductor base materials for spintronic devices working at room temperature no appropriate material based on ferromagnetic semiconductors has been found so far. We demonstrate that the phase segregated system with MnSb hexagonal inclusions inside the GaSb matrix, formed directly during the molecular beam epitaxial growth reveals the ferromagnetic properties at room temperature and is a good candidate for exploitation in spintronics. Furthermore, the MnSb inclusions with only one crystalline structure were identified in this GaMn:MnSb granular material. The SQUID magnetometry confirmed that this material exhibits ferromagnetic like behavior starting from helium up to room temperature. Moreover, the magnetic anisotropy was found which was present also at room temperature, and it was proved that by choosing a proper substrate it is possible to control the direction of easy axis of inclusions' magnetization moment between in-plane and out-of-plane; the latter is important in view of potential applications in spintronic devices.

  6. ARM - Publications: Science Team Meeting Documents

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Retrieval of Mean Cosine of Aerosol Phase Function from Extinction and Sky Brightness Measurements Zhuravleva, T.B.(a), Sviridenkov, M.A.(b), and Anikin, P.P.(b), Institute of Atmospheric Optics SB RAS, Tomsk, Russia (a), A.M. Obukhov Institute of Atmospheric Physics RAS, Moscow, Russia (b) Thirteenth Atmospheric Radiation Measurement (ARM) Science Team Meeting Asymmetry of the aerosol phase function together with optical thickness drive the magnitude of the aerosol radiative forcing. Two

  7. Ab initio study of structural, electronic, magnetic alloys: XTiSb (X = Co, Ni and Fe)

    SciTech Connect (OSTI)

    Ibrir, M. Berri, S.; Lakel, S.; Alleg, S.; Bensalem, R.

    2015-03-30

    Structural, electronic and magnetic properties of three semi-Heusler compounds of CoTiSb, NiTiSb and FeTiSb were calculated by the method (FP-LAPW) which is based on the DFT code WIEN2k. We used the generalized gradient approximation (GGA (06)) for the term of the potential exchange and correlation (XC) to calculate structural properties, electronic properties and magnetic properties. Structural properties obtained as the lattice parameter are in good agreement with the experimental results available for the electronic and magnetic properties was that: CoTiSb is a semiconductor NiTiSb is a metal and FeTiSb is a half-metal ferromagnetic.

  8. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    SciTech Connect (OSTI)

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman; Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H.; Loubychev, Dmitri; Liu, Amy; Fastenau, Joel; Lindemuth, Jeff

    2014-08-04

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5 lower effective mass for s-InSb compared to s-Ge quantum well at 1.9??10{sup 12}?cm{sup 2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  9. Photoemission study of the electronic structure and charge density waves of Na?Ti?Sb?O

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tan, S. Y.; Jiang, J.; Ye, Z. R.; Niu, X. H.; Song, Y.; Zhang, C. L.; Dai, P. C.; Xie, B. P.; Lai, X. C.; Feng, D. L.

    2015-04-30

    The electronic structure of Na?Ti?Sb?O single crystal is studied by photon energy and polarization dependent angle-resolved photoemission spectroscopy (ARPES). The obtained band structure and Fermi surface agree well with the band structure calculation of Na?Ti?Sb?O in the non-magnetic state, which indicates that there is no magnetic order in Na?Ti?Sb?O and the electronic correlation is weak. Polarization dependent ARPES results suggest the multi-band and multi-orbital nature of Na?Ti?Sb?O. Photon energy dependent ARPES results suggest that the electronic structure of Na?Ti?Sb?O is rather two-dimensional. Moreover, we find a density wave energy gap forms below the transition temperature and reaches 65 meV atmore7 K, indicating that Na?Ti?Sb?O is likely a weakly correlated CDW material in the strong electron-phonon interaction regime. (author)less

  10. Photoemission study of the electronic structure and charge density waves of Na?Ti?Sb?O

    SciTech Connect (OSTI)

    Tan, S. Y.; Jiang, J.; Ye, Z. R.; Niu, X. H.; Song, Y.; Zhang, C. L.; Dai, P. C.; Xie, B. P.; Lai, X. C.; Feng, D. L.

    2015-04-30

    The electronic structure of Na?Ti?Sb?O single crystal is studied by photon energy and polarization dependent angle-resolved photoemission spectroscopy (ARPES). The obtained band structure and Fermi surface agree well with the band structure calculation of Na?Ti?Sb?O in the non-magnetic state, which indicates that there is no magnetic order in Na?Ti?Sb?O and the electronic correlation is weak. Polarization dependent ARPES results suggest the multi-band and multi-orbital nature of Na?Ti?Sb?O. Photon energy dependent ARPES results suggest that the electronic structure of Na?Ti?Sb?O is rather two-dimensional. Moreover, we find a density wave energy gap forms below the transition temperature and reaches 65 meV at 7 K, indicating that Na?Ti?Sb?O is likely a weakly correlated CDW material in the strong electron-phonon interaction regime. (author)

  11. Method of making AlInSb by metal-organic chemical vapor deposition

    DOE Patents [OSTI]

    Biefeld, Robert M. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Baucom, Kevin C. (Albuquerque, NM)

    2000-01-01

    A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al.sub.X In.sub.1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525.degree. C. to produce Al.sub.x In.sub.1-x Sb crystalline materials wherein x is greater than 0.002 and less than one.

  12. Electron-phonon coupling and thermal transport in the thermoelectric compound Mo3Sb7–xTex

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bansal, Dipanshu; Li, Chen W.; Said, Ayman H.; Abernathy, Douglas L.; Yan, Jiaqiang; Delaire, Olivier A.

    2015-12-07

    Phonon properties of Mo3Sb7–xTex (x = 0, 1.5, 1.7), a potential high-temperature thermoelectric material, have been studied with inelastic neutron and x-ray scattering, and with first-principles simulations. The substitution of Te for Sb leads to pronounced changes in the electronic struc- ture, local bonding, phonon density of states (DOS), dispersions, and phonon lifetimes. Alloying with tellurium shifts the Fermi level upward, near the top of the valence band, resulting in a strong suppression of electron-phonon screening, and a large overall stiffening of interatomic force- constants. The suppression in electron-phonon coupling concomitantly increases group velocities and suppresses phonon scattering rates, surpassingmore » the effects of alloy-disorder scattering, and re- sulting in a surprising increased lattice thermal conductivity in the alloy. We also identify that the local bonding environment changes non-uniformly around different atoms, leading to variable perturbation strengths for different optical phonon branches. The respective roles of changes in phonon group velocities and phonon lifetimes on the lattice thermal conductivity are quantified. Lastly, our results highlight the importance of the electron-phonon coupling on phonon mean-free-paths in this compound, and also estimates the contributions from boundary scattering, umklapp scattering, and point-defect scattering.« less

  13. The reaction mechanism of FeSb2 as anode for sodium-ion batteries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Baggetto, Loic; Hah, Hien-Yoong; Johnson, Prof. Dr. Charles E.; Bridges, Craig A; Johnson, Jackie A.; Veith, Gabriel M

    2014-01-01

    The electrochemical reaction of FeSb2 with Na is reported for the first time. The first discharge (sodiation) potential profile of FeSb2 is characterized by a gentle slope centered at 0.25 V. During charge (Na removal) and the subsequent discharge, the main reaction takes place near 0.7 V and 0.4 V, respectively. The reversible storage capacity amounts to 360 mA h g1, which is smaller than the theoretical value of 537 mA h g1. The reaction, studied by ex situ and in situ X-ray diffraction, is found to proceed by the consumption of crystalline FeSb2 to form an amorphous phase. Uponmore » further sodiation, the formation of nanocrystalline Na3Sb domains is evidenced. During desodiation, Na3Sb domains convert into an amorphous phase. The chemical environment of Fe, probed by 57Fe Mo ssbauer spectroscopy, undergoes significant changes during the reaction. During sodiation, the well-resolved doublet of FeSb2 with an isomer shift around 0.45 mm s1 and a quadrupole splitting of 1.26 mm s1 is gradually converted into a doublet line centered at about 0.15 mm s1 along with a singlet line around 0 mm s1. The former signal results from the formation of a Fe-rich FexSb alloy with an estimated composition of Fe4Sb while the latter signal corresponds to superparamagnetic Fe due to the formation of nanosized pure Fe domains. Interestingly the signal of Fe4Sb remains unaltered during desodiation. This mechanism is substantially different than that observed during the reaction with Li. The irreversible formation of a Fe-rich Fe4Sb alloy and the absence of full desodiation of Sb domains explain the lower than theoretical practical storage capacity.« less

  14. Tank 40 Final SB7b Chemical Characterization Results

    SciTech Connect (OSTI)

    Bannochie, C. J.

    2012-11-06

    A sample of Sludge Batch 7b (SB7b) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). The SB7b WAPS sample was also analyzed for chemical composition including noble metals and fissile constituents. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB7b sample was transferred from the shipping container into a 4-L high density polyethylene bottle and solids were allowed to settle over the weekend. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 558 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon? vessels and four with NaOH/Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Two Analytical Reference Glass ? 1 (ARG-1) standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma ? atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma ? mass spectrometry (ICP-MS) analysis, atomic absorption spectroscopy (AA) for As and Se, and cold vapor atomic absorption spectroscopy (CV-AA) for Hg. Equivalent dilutions of the alkali fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB7b supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES, ion chromatography (IC), total base/free OH{sup -}/other base, total inorganic carbon/total organic carbon (TIC/TOC) analyses, and Cs-137 gamma scan. Weighted dilutions of slurry were submitted for IC, TIC/TOC, and total base/free OH-/other base analyses. Activities for U-233, U-235, and Pu-239 were determined from the ICP-MS data for the aqua regia digestions of the Tank 40 WAPS slurry using the specific activity of each isotope. The Pu-241 value was determined from a Pu-238/-241 method.

  15. In-situ TEM study of sodiation and failure mechanism of Sb anodes

    Office of Scientific and Technical Information (OSTI)

    DF-TEM micrograph of TiN, obtained using a portion of the (111) and (200) rings, (e) XRD pattern of Sb(50nm )TiN@Ge nanowires, (f) HAADF micrograph of Sb(50nm )TiN@Ge; the ...

  16. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

    DOE Patents [OSTI]

    Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

    2014-11-11

    Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

  17. Interface Reactions and Electrical Characteristics of Au/GaSb Contacts

    SciTech Connect (OSTI)

    H. Ehsani; R.J. Gutmann; G.W. Charache

    2000-07-07

    The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{sub 2} compound and several Au-Ga phases are produced. Phase transitions occur toward higher Ga concentration with increasing annealing temperatures. Furthermore, the depth of the contact also increases with increased annealing temperature. They found that the AuSb{sub 2} compound forms on the GaSb surface, with the compound crystal partially ordered with respect to the substrate. The transition of Schottky- to ohmic-contact behavior in Au/n-type GaSb occurs simultaneously with the formation of the AuGa compound at about a 250 C annealing temperature. This ohmic contact forms without the segregation of dopants at the metallic compound/GaSb interface. Therefore it is postulated that transition from Schottky- to ohmic-contact behavior is obtained through a series of tunneling transitions of electrons through defects in the depletion region in the Au/n-type GaSb contacts. Contact resistivities of 6-7 x 10{sup -6} {Omega}-cm{sup 2} were obtained with the annealing temperature between 300 and 350 C for 30 seconds. In Au/p-type GaSb contacts, the resistivity was independent of the annealing temperature. This suggested that the carrier transport in p-type contact dominated by thermionic emission.

  18. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zuo, Daniel; Liu, Runyu; Wasserman, Daniel; Mabon, James; He, Zhao -Yu; Liu, Shi; Zhang, Yong -Hang; Kadlec, Emil A.; Olson, Benjamin V.; Shaner, Eric A.

    2015-02-18

    We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 202 ns, with a vertical diffusivity of 2.78 x 10–2 cm2/s. Wemore » also report on the device's optical response characteristics at 78 K.« less

  19. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

    SciTech Connect (OSTI)

    Zuo, Daniel; Liu, Runyu; Wasserman, Daniel; Mabon, James; He, Zhao -Yu; Liu, Shi; Zhang, Yong -Hang; Kadlec, Emil A.; Olson, Benjamin V.; Shaner, Eric A.

    2015-02-18

    We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 202 ns, with a vertical diffusivity of 2.78 x 102 cm2/s. We also report on the device's optical response characteristics at 78 K.

  20. Ab initio calculation of the thermodynamic properties of InSb under intense laser irradiation

    SciTech Connect (OSTI)

    Feng, ShiQuan; Cheng, XinLu; Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu, 610064 ; Zhao, JianLing; Zhang, Hong

    2013-07-28

    In this paper, phonon spectra of InSb at different electronic temperatures are presented. Based on the phonon dispersion relationship, we further perform a theoretical investigation of the thermodynamic properties of InSb under intense laser irradiation. The phonon entropy, phonon heat capacity, and phonon contribution to Helmholtz free energy and internal energy of InSb are calculated as functions of temperature at different electronic temperatures. The abrupt change in the phonon entropy- temperature curve from T{sub e} = 0.75 to 1.0 eV provides an indication of InSb undergoing a phase transition from solid to liquid. It can be considered as a collateral evidence of non-thermal melting for InSb under intense electronic excitation effect.

  1. Final Optics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Final Optics Schematic layout of NIF's final optics assembly (FOA). The suite of optics for one beamline is on the right. The final optics assemblies (FOAs) are the last element of the main laser system and the first of the target area systems. Each FOA contains four integrated optics modules (IOMs) that incorporate beam conditioning, frequency conversion, focusing, diagnostic sampling, and debris shielding capabilities into a single compact assembly. These optics are shown in the figure at

  2. On Correction of Diffuse Radiation Measured by MFRSR

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    On Correction of Diffuse Radiation Measured by MFRSR T. B. Zhuravleva Institute of Atmospheric Optics, SB RAS Tomsk, Russia M. A. Sviridenkov and P. P. Anikin A. M. Obukhov Institute of Atmospheric Physics, RAS Moscow, Russia Introduction The multi-filter rotated shadowband radiometer (MFRSR) provides spectral direct, diffuse, and total horizontal solar irradiance measurements. Because the MFRSR's receiver has a non-Lambertian response, for a correct interpretation of measured radiation an

  3. Illinois SB 1987: the Clean Coal Portfolio Standard Law

    SciTech Connect (OSTI)

    2009-01-15

    On January 12, 2009, Governor Rod Blagojevich signed SB 1987, the Clean Coal Portfolio Standard Law. The legislation establishes emission standards for new coal-fueled power plants power plants that use coal as their primary feedstock. From 2009-2015, new coal-fueled power plants must capture and store 50 percent of the carbon emissions that the facility would otherwise emit; from 2016-2017, 70 percent must be captured and stored; and after 2017, 90 percent must be captured and stored. SB 1987 also establishes a goal of having 25 percent of electricity used in the state to come from cost-effective coal-fueled power plants that capture and store carbon emissions by 2025. Illinois is the first state to establish a goal for producing electricity from coal-fueled power plants with carbon capture and storage (CCS). To support the commercial development of CCS technology, the legislation guarantees purchase agreements for the first Illinois coal facility with CCS technology, the Taylorville Energy Center (TEC); Illinois utilities are required to purchase at least 5 percent of their electricity supply from the TEC, provided that customer rates experience only modest increases. The TEC is expected to be completed in 2014 with the ability to capture and store at least 50 percent of its carbon emissions.

  4. Optical microspectrometer

    DOE Patents [OSTI]

    Sweatt, William C.; Christenson, Todd R.

    2004-05-25

    An optical microspectrometer comprises a grism to disperse the spectra in a line object. A single optical microspectrometer can be used to sequentially scan a planar object, such as a dye-tagged microchip. Because the optical microspectrometer is very compact, multiple optical microspectrometers can be arrayed to provide simultaneous readout across the width of the planar object The optical microspectrometer can be fabricated with lithographic process, such as deep X-ray lithography (DXRL), with as few as two perpendicular exposures.

  5. Pressure dependence of donor excitation spectra in AlSb

    SciTech Connect (OSTI)

    Hsu, L.; McCluskey, M.D.; Haller, E.E.

    2002-01-16

    We have investigated the behavior of ground to bound excited-state electronic transitions of Se and Te donors in AlSb as a function of hydrostatic pressure. Using broadband far-infrared Fourier transform spectroscopy, we observe qualitatively different behaviors of the electronic transition energies of the two donors. While the pressure derivative of the Te transition energy is small and constant, as might be expected for a shallow donor, the pressure derivatives of the Se transition energies are quadratic and large at low pressures, indicating that Se is actually a deep donor. In addition, at pressures between 30 and 50 kbar, we observe evidence of an anti-crossing between one of the selenium electronic transitions and a two-phonon mode.

  6. CaMn2Sb2: Spin waves on a frustrated antiferromagnetic honeycomb lattice

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect CaMn2Sb2: Spin waves on a frustrated antiferromagnetic honeycomb lattice Citation Details In-Document Search This content will become publicly available on May 22, 2016 Title: CaMn2Sb2: Spin waves on a frustrated antiferromagnetic honeycomb lattice We present inelastic neutron scattering measurements of the antiferromagnetic insulator CaMn2Sb2:, which consists of corrugated honeycomb layers of Mn. The dispersion of magnetic excitations has been measured

  7. DWPF SIMULANT CPC STUDIES FOR SB7B

    SciTech Connect (OSTI)

    Koopman, D.

    2011-11-01

    Lab-scale DWPF simulations of Sludge Batch 7b (SB7b) processing were performed. Testing was performed at the Savannah River National Laboratory - Aiken County Technology Laboratory (SRNL-ACTL). The primary goal of the simulations was to define a likely operating window for acid stoichiometry for the DWPF Sludge Receipt and Adjustment Tank (SRAT). In addition, the testing established conditions for the SRNL Shielded Cells qualification simulation of SB7b-Tank 40 blend, supported validation of the current glass redox model, and validated the coupled process flowsheet at the nominal acid stoichiometry. An acid window of 105-140% by the Koopman minimum acid (KMA) equation (107-142% DWPF Hsu equation) worked for the sludge-only flowsheet. Nitrite was present in the SRAT product for the 105% KMA run at 366 mg/kg, while SME cycle hydrogen reached 94% of the DWPF Slurry Mix Evaporator (SME) cycle limit in the 140% KMA run. The window was determined for sludge with added caustic (0.28M additional base, or roughly 12,000 gallons 50% NaOH to 820,000 gallons waste slurry). A suitable processing window appears to be 107-130% DWPF acid equation for sludge-only processing allowing some conservatism for the mapping of lab-scale simulant data to full-scale real waste processing including potentially non-conservative noble metal and mercury concentrations. This window should be usable with or without the addition of up to 7,000 gallons of caustic to the batch. The window could potentially be wider if caustic is not added to SB7b. It is recommended that DWPF begin processing SB7b at 115% stoichiometry using the current DWPF equation. The factor could be increased if necessary, but changes should be made with caution and in small increments. DWPF should not concentrate past 48 wt.% total solids in the SME cycle if moderate hydrogen generation is occurring simultaneously. The coupled flowsheet simulation made more hydrogen in the SRAT and SME cycles than the sludge-only run with the same acid stoichiometric factor. The slow acid addition in MCU seemed to alter the reactions that consumed the small excess acid present such that hydrogen generation was promoted relative to sludge-only processing. The coupled test reached higher wt.% total solids, and this likely contributed to the SME cycle hydrogen limit being exceeded at 110% KMA. It is clear from the trends in the SME processing GC data, however, that the frit slurry formic acid contributed to driving the hydrogen generation rate above the SME cycle limit. Hydrogen generation rates after the second frit addition generally exceeded those after the first frit addition. SRAT formate loss increased with increasing acid stoichiometry (15% to 35%). A substantial nitrate gain which was observed to have occurred after acid addition (and nitrite destruction) was reversed to a net nitrate loss in runs with higher acid stoichiometry (nitrate in SRAT product less than sum of sludge nitrate and added nitric acid). Increased ammonium ion formation was also indicated in the runs with nitrate loss. Oxalate loss on the order 20% was indicated in three of the four acid stoichiometry runs and in the coupled flowsheet run. The minimum acid stoichiometry run had no indicated loss. The losses were of the same order as the official analytical uncertainty of the oxalate concentration measurement, but were not randomly distributed about zero loss, so some actual loss was likely occurring. Based on the entire set of SB7b test data, it is recommended that DWPF avoid concentrating additional sludge solids in single SRAT batches to limit the concentrations of noble metals to SB7a processing levels (on a grams noble metal per SRAT batch basis). It is also recommended that DWPF drop the formic acid addition that accompanies the process frit 418 additions, since SME cycle data showed considerable catalytic activity for hydrogen generation from this additional acid (about 5% increase in stoichiometry occurred from the frit formic acid). Frit 418 also does not appear to need formic acid addition to prevent gel formation in

  8. Reduction of metastasis, cell invasion, and adhesion in mouse osteosarcoma by YM529/ONO-5920-induced blockade of the Ras/MEK/ERK and Ras/PI3K/Akt pathway

    SciTech Connect (OSTI)

    Tsubaki, Masanobu; Satou, Takao; Itoh, Tatsuki; Imano, Motohiro; Ogaki, Mitsuhiko; Yanae, Masashi; Depeartment of Pharmacy, Sakai Hospital, Kinki University School of Medicine, Sakai, Osaka 590-0132 ; Nishida, Shozo

    2012-03-15

    Osteosarcoma is one of the most common primary malignant bone tumors in children and adolescents. Some patients continue to have a poor prognosis, because of the metastatic disease. YM529/ONO-5920 is a nitrogen-containing bisphosphonate that has been used for the treatment of osteoporosis. YM529/ONO-5920 has recently been reported to induce apoptosis in various tumors including osteosarcoma. However, the mode of metastasis suppression in osteosarcoma by YM529/ONO-5920 is unclear. In the present study, we investigated whether YM529/ONO-5920 inhibited tumor cell migration, invasion, adhesion, or metastasis in the LM8 mouse osteosarcoma cell line. We found that YM529/ONO-5920 significantly inhibited metastasis, cell migration, invasion, and adhesion at concentrations that did not have antiproliferative effects on LM8 cells. YM529/ONO-5920 also inhibited the mRNA expression and protein activities of matrix metalloproteinases (MMPs). In addition, YM529/ONO-5920 suppressed phosphorylated extracellular signal-regulated kinase 1/2 (ERK1/2) and the serine/threonine protein kinase B (Akt) by the inhibition of Ras prenylation. Moreover, U0126, a mitogen-activated protein kinase kinase (MEK) 1/2 inhibitor, and LY294002, a phosphatidylinositol 3-kinase (PI3K) inhibitor, also inhibited LM8 cell migration, invasion, adhesion, and metastasis, as well as the mRNA expression and protein activities of MMP-1, MMP-2, MMP-9, and MT1-MMP. The results indicated that YM529/ONO-5920 suppressed the Ras/MEK/ERK and Ras/PI3K/Akt pathways, thereby inhibiting LM8 cell migration, invasion, adhesion, and metastasis. These findings suggest that YM529/ONO-5920 has potential clinical applications for the treatment of tumor cell metastasis in osteosarcoma. -- Highlights: ? We investigated whether YM529/ONO-5920 inhibited tumor metastasis in osteosarcoma. ? YM529/ONO-5920 inhibited metastasis, cell migration, invasion, and adhesion. ? YM529/ONO-5920 suppressed Ras signalings. ? YM529/ONO-5920 has potential clinical applications for the treatment in osteosarcoma.

  9. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  10. Thermoelectric properties of AgSbTe? from first-principles calculations

    SciTech Connect (OSTI)

    Rezaei, Nafiseh; Akbarzadeh, Hadi; Hashemifar, S. Javad

    2014-09-14

    The structural, electronic, and transport properties of AgSbTe? are studied by using full-relativistic first-principles electronic structure calculation and semiclassical description of transport parameters. The results indicate that, within various exchange-correlation functionals, the cubic Fd3?m and trigonal R3?m structures of AgSbTe? are more stable than two other considered structures. The computed Seebeck coefficients at different values of the band gap and carrier concentration are accurately compared with the available experimental data to speculate a band gap of about 0.10.35 eV for AgSbTe? compound, in agreement with our calculated electronic structure within the hybrid HSE (Heyd-Scuseria-Ernzerhof) functional. By calculating the semiclassical Seebeck coefficient, electrical conductivity, and electronic part of thermal conductivity, we present the theoretical upper limit of the thermoelectric figure of merit of AgSbTe? as a function of temperature and carrier concentration.

  11. Optical probe

    DOE Patents [OSTI]

    Hencken, Kenneth (Pleasanton, CA); Flower, William L. (Livermore, CA)

    1999-01-01

    A compact optical probe is disclosed particularly useful for analysis of emissions in industrial environments. The instant invention provides a geometry for optically-based measurements that allows all optical components (source, detector, rely optics, etc.) to be located in proximity to one another. The geometry of the probe disclosed herein provides a means for making optical measurements in environments where it is difficult and/or expensive to gain access to the vicinity of a flow stream to be measured. Significantly, the lens geometry of the optical probe allows the analysis location within a flow stream being monitored to be moved while maintaining optical alignment of all components even when the optical probe is focused on a plurality of different analysis points within the flow stream.

  12. AlSb/InAs HIGH ELECTRON MOBILITY TRANSISTORS - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electricity Transmission Electricity Transmission Advanced Materials Advanced Materials Find More Like This Return to Search AlSb/InAs HIGH ELECTRON MOBILITY TRANSISTORS Naval Research Laboratory Contact NRL About This Technology Technology Marketing Summary The Naval Research Laboratory (NRL) has developed materials growth and fabrication technology for the manufacture of high-speed, low power AlSb/InAs high electron mobility transistors (HEMTs) that exhibit state-of-the-art low-power

  13. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Authors: Shu, Michael J. ; Zalden, Peter ; Chen, Frank ; Weems, Ben ; Chatzakis, Ioannis ; Xiong, Feng ; Jeyasingh, Rakesh ; Hoffmann, Matthias C. ; Pop, Eric ; Wong, H.-S.Philip ; Wuttig, Matthias ; Lindenberg, Aaron M. Publication Date: 2014-07-08 OSTI

  14. Diluted magnetic semiconductors based on Sb2-xVxTe3 | Energy Frontier

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Centers Diluted magnetic semiconductors based on Sb2-xVxTe3 Home Author: J. S. Dyck, P. Hajek, P. Lostak, C. Uher Year: 2002 Abstract: We report on a diluted magnetic semiconductor based on the Sb2Te3 tetradymite structure doped with very low concentrations of vanadium (1-3 at. %). The anomalous transport behavior and robust magnetic hysteresis loops observed in magnetotransport and magnetic measurements are experimental manifestations of the ferromagnetic state in these materials.

  15. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Authors: Shu, Michael J. ; Zalden, Peter ; Chen, Frank ; Weems, Ben ; Chatzakis, Ioannis ; Xiong, Feng ; Jeyasingh, Rakesh ; Hoffmann, Matthias C. ; Pop, Eric ; Wong, H.-S.Philip ; Wuttig, Matthias ; Lindenberg, Aaron M. Publication Date: 2014-07-08 OSTI Identifier: 1136695 Report

  16. Optical keyboard

    DOE Patents [OSTI]

    Veligdan, James T. (Manorville, NY); Feichtner, John D. (Fiddletown, CA); Phillips, Thomas E. (San Diego, CA)

    2001-01-01

    An optical keyboard includes an optical panel having optical waveguides stacked together. First ends of the waveguides define an inlet face, and opposite ends thereof define a screen. A projector transmits a light beam outbound through the waveguides for display on the screen as a keyboard image. A light sensor is optically aligned with the inlet face for sensing an inbound light beam channeled through the waveguides from the screen upon covering one key of the keyboard image.

  17. Antiferromagnetic ordering in the doped Kondo insulator CeRhSb

    SciTech Connect (OSTI)

    Menon, L.; Malik, S.K.

    1997-06-01

    CeRhSb, the so-called {open_quotes}Kondo insulator,{close_quotes} is a mixed-valent compound showing a gap formation in the electronic density of states. On the other hand, CePdSb is ferromagnetically ordered with a Curie temperature of {approximately}17 K. We have carried out magnetic susceptibility and electrical resistivity measurements on CeRh{sub 1{minus}x}Pd{sub x}Sb (0{le}x{le}1.0), to study the ground-state properties of this system. For small Pd doping in CeRhSb, up to 20{percent}, the gap continually diminishes and no magnetic ordering is observed down to 2 K. In the region 0.3{le}x{le}0.4, as soon as the gap is suppressed, an antiferromagnetic ground state is observed. In the region 0.5{le}x{lt}0.7, the compounds are not single phase. At the CePdSb end, in the region 0.7{le}x{le}1, the ground state is ferromagnetic. The observation of an antiferromagnetic phase in the phase diagram of CeRh{sub 1{minus}x}Pd{sub x}Sb, where neither end is antiferromagnetic, is interesting and is discussed in the light of some recent theoretical models. {copyright} {ital 1997} {ital The American Physical Society}

  18. The magnetic structure of EuCu2Sb2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ryan, D. H.; Cadogan, J. M.; Anand, V. K.; Johnston, D. C.; Flacau, R.

    2015-05-06

    Antiferromagnetic ordering of EuCu2Sb2 which forms in the tetragonal CaBe2Ge2-type structure (space group P4/nmm #129) has been studied using neutron powder diffraction and 151Eu Mössbauer spectroscopy. The room temperature 151Eu isomer shift of –12.8(1) mm/s shows the Eu to be divalent, while the 151Eu hyperfine magnetic field (Bhf) reaches 28.7(2) T at 2.1 K, indicating a full Eu2+ magnetic moment. Bhf(T) follows a smoothmore » $$S=\\frac{7}{2}$$ Brillouin function and yields an ordering temperature of 5.1(1) K. Refinement of the neutron diffraction data reveals a collinear A-type antiferromagnetic arrangement with the Eu moments perpendicular to the tetragonal c-axis. As a result, the refined Eu magnetic moment at 0.4 K is 7.08(15) μB which is the full free-ion moment expected for the Eu2+ ion with $$S=\\frac{7}{2}$$ and a spectroscopic splitting factor of g = 2.« less

  19. Solvothermal synthesis of graphene-Sb{sub 2}S{sub 3} composite and the degradation activity under visible light

    SciTech Connect (OSTI)

    Tao, Wenguang; Chang, Jiuli; Wu, Dapeng; Gao, Zhiyong; Duan, Xiaoli; Xu, Fang; Engineering Technology Research Center of Motive Power and Key Materials, Henan, 453007 ; Jiang, Kai; Engineering Technology Research Center of Motive Power and Key Materials, Henan, 453007

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ? Graphene-Sb{sub 2}S{sub 3} composites were synthesized through a facile solvothermal method. ? Hydroxyl radicals are the main species responsible for the photodegradation activity. ? Graphene-Sb{sub 2}S{sub 3} demonstrated dramatically improved visible light degradation activity. -- Abstract: Novel graphene-Sb{sub 2}S{sub 3} (G-Sb{sub 2}S{sub 3}) composites were synthesized via a facile solvothermal method with graphene oxide (GO), SbCl{sub 3} and thiourea as the reactants. GO played an important role in controlling the size and the distribution of the formed Sb{sub 2}S{sub 3} nanoparticles on the graphene sheets with different density. Due to the negative surface charge, smaller Sb{sub 2}S{sub 3} particles size and efficient electrons transfer from Sb{sub 2}S{sub 3} to graphene, the composites demonstrated improved photodegradation activity on rhodamine B (RhB). Among these composites, the product G-Sb{sub 2}S{sub 3} 0.1, which was synthesized with the GO concentration of 0.1 mg/mL, exhibited the highest photodegradation activity owing to the considerable density of Sb{sub 2}S{sub 3} nanoparticles onto graphene sheet free of aggregation. Hydroxyl radicals (OH) derived from conduction band (CB) electrons of Sb{sub 2}S{sub 3} is suggested to be responsible for the photodegradation of RhB. The high visible light degradation activity and the satisfactory cycling stability made the as-prepared G-Sb{sub 2}S{sub 3} 0.1 an applicable photocatalyst.

  20. Study of the shape of an optical window in a super-resolution state by electromagnetic-thermal coupled simulation: Effects of melting of an active layer in an optical disc

    SciTech Connect (OSTI)

    Sano, Haruyuki; Shima, Takayuki; Kuwahara, Masashi; Fujita, Yoshiya; Uchiyama, Munehisa; Aono, Yoshiyuki

    2014-04-21

    We performed a multi-physics simulation for the propagation of electromagnetic waves and heat conduction in a super-resolution optical disc that includes an active layer of InSb. Because the change in the optical constant of InSb due to the phase transition is taken into account, the melting of the active layer can be realistically simulated in our calculation. It was found that in the case of an incident light power (P) of 2 mW, a profile of the electric field intensity transmitted through the InSb layer has an asymmetric shape with a narrow peak. This beam-narrowing was suggested to be an essential mechanism of the super-resolution, because a narrower light beam allows the detection of a smaller pit structure than the optical diffraction limit. This beam-narrowing was found to be originating from a small molten region produced in the InSb layer, which works as a mask for light exposure.

  1. Performance Study of K2CsSb Photocathode Inside a DC High Voltage Gun

    SciTech Connect (OSTI)

    McCarter J. L.; Rao T.; Smedley, J.; Grames, J.; Mammei, R.; Poelker, M.; Suleiman, R.

    2011-09-01

    In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K{sub 2}CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the K{sub 2}CsSb photocathode inside a DC gun. Since the multialkali cathode is a compound with constant characteristics over its entire thickness, we anticipate that the lifetime issues seen in GaAs:Cs due to surface damage by ion bombardment would be minimized. Hence successful operation of the K{sub 2}CsSb cathode in a DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of a K{sub 2}CsSb cathode in a DC gun, we have designed and built a load lock system that allows the fabrication of the cathode at Brookhaven National Lab (BNL) and its testing at Jefferson Lab (JLab). In this paper, we will present the performance of the K{sub 2}CsSb photocathode in the preparation chamber and in the DC gun.

  2. Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy

    SciTech Connect (OSTI)

    Hosseini Vajargah, S.; Botton, G. A.; Ghanad-Tavakoli, S.; Preston, J. S.; Kleiman, R. N.

    2012-11-01

    A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 - 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.

  3. Superconductivity in strong spin orbital coupling compound Sb2Se3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kong, P. P.; Sun, F.; Xing, L. Y.; Zhu, J.; Zhang, S. J.; Li, W. M.; Liu, Q. Q.; Wang, X. C.; Feng, S. M.; Yu, X. H.; et al

    2014-10-20

    Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand was found to be topological trivial, but theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial state. We report on the discovery of superconductivity in Sb2Se3 single crystal induced via pressure. Our experiments indicated that Sb2Se3 became superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition at ~3 GPa which should be related tomore » the topological quantum transition. The superconducting transition temperature (TC) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. As a result, high pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of TC slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.« less

  4. Fragile structural transition in Mo3Sb7

    SciTech Connect (OSTI)

    Yan, Jiaqiang -Q.; McGuire, Michael A; May, Andrew F; Parker, David S.; Mandrus, D. G.; Sales, Brian C.

    2015-08-10

    Mo3Sb7 single crystals lightly doped with Cr, Ru, or Te are studied in order to explore the interplay between superconductivity, magnetism, and the cubic-tetragonal structural transition. The structural transition at 53 K is extremely sensitive to Ru or Te substitution which introduces additional electrons, but robust against Cr substitution. We observed no sign of a structural transition in superconducting Mo2.91Ru0.09Sb7 and Mo3Sb6.975Te0.025. In contrast, 3 at.% Cr doping only slightly suppresses the structural transition to 48 K while leaving no trace of superconductivity above 1.8 K. Analysis of magnetic properties suggests that the interdimer interaction in Mo3Sb7 is near a critical value and essential for the structural transition. Futhermore, all dopants suppress the superconductivity of Mo3Sb7. The tetragonal structure is not necessary for superconductivity.

  5. Shift in the Equilibrium between On and Off States of the Allosteric Switch in Ras-GppNHp Affected by Small Molecules and Bulk Solvent Composition

    SciTech Connect (OSTI)

    Holzapfel, Genevieve; Buhrman, Greg; Mattos, Carla

    2012-08-31

    Ras GTPase cycles between its active GTP-bound form promoted by GEFs and its inactive GDP-bound form promoted by GAPs to affect the control of various cellular functions. It is becoming increasingly apparent that subtle regulation of the GTP-bound active state may occur through promotion of substates mediated by an allosteric switch mechanism that induces a disorder to order transition in switch II upon ligand binding at an allosteric site. We show with high-resolution structures that calcium acetate and either dithioerythritol (DTE) or dithiothreitol (DTT) soaked into H-Ras-GppNHp crystals in the presence of a moderate amount of poly(ethylene glycol) (PEG) can selectively shift the equilibrium to the 'on' state, where the active site appears to be poised for catalysis (calcium acetate), or to what we call the 'ordered off' state, which is associated with an anticatalytic conformation (DTE or DTT). We also show that the equilibrium is reversible in our crystals and dependent on the nature of the small molecule present. Calcium acetate binding in the allosteric site stabilizes the conformation observed in the H-Ras-GppNHp/NOR1A complex, and PEG, DTE, and DTT stabilize the anticatalytic conformation observed in the complex between the Ras homologue Ran and Importin-{beta}. The small molecules are therefore selecting biologically relevant conformations in the crystal that are sampled by the disordered switch II in the uncomplexed GTP-bound form of H-Ras. In the presence of a large amount of PEG, the ordered off conformation predominates, whereas in solution, in the absence of PEG, switch regions appear to remain disordered in what we call the off state, unable to bind DTE.

  6. Natural nanostructure and superlattice nanodomains in AgSbTe{sub 2}

    SciTech Connect (OSTI)

    Carlton, Christopher E.; De Armas, Ricardo; Shao-Horn, Yang E-mail: shaohorn@mit.edu; Ma, Jie; May, Andrew F.; Delaire, Olivier E-mail: shaohorn@mit.edu

    2014-04-14

    AgSbTe{sub 2} has long been of interest for thermoelectric applications because of its favorable electronic properties and its low lattice thermal conductivity of ?0.7?W/mK. In this work, we report new findings from a high-resolution transmission electron microscopy study revealing two nanostructures in single crystal Ag{sub 1?x}Sb{sub 1+x}Sb{sub 2+x} (with x?=?0, 0.1, 0.2); (i) a rippled natural nanostructure with a period of ?2.55?nm and (ii) superlattice ordered nanodomains consistent with cation ordering predicted in previous density functional theory studies. These nanostructures, combined with point-defects, probably serve as sources of scattering for phonons, thereby yielding a low lattice thermal conductivity over a wide temperature range.

  7. Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum...

    Office of Scientific and Technical Information (OSTI)

    Room-temperature mid-infrared "M"-type GaAsSbInGaAs quantum well lasers on InP substrate Citation Details In-Document Search Title: Room-temperature mid-infrared "M"-type GaAsSb...

  8. Evaluation Of Glass Density To Support The Estimation Of Fissile Mass Loadings From Iron Concentrations In SB8 Glasses

    SciTech Connect (OSTI)

    Edwards, T. B.; Peeler, D. K.; Kot, W. K.; Gan, H.; Pegg, I. L.

    2013-04-30

    The Department of Energy Savannah River (DOE-SR) has provided direction to Savannah River Remediation (SRR) to maintain fissile concentration in glass below 897 g/m{sup 3}. In support of that guidance, the Savannah River National Laboratory (SRNL) provided a technical basis and a supporting Microsoft Excel spreadsheet for the evaluation of fissile loading in Sludge Batch 5 (SB5), Sludge Batch 6 (SB6), Sludge Batch 7a (SB7a), and Sludge Batch 7b (SB7b) glass based on the iron (Fe) concentration in glass as determined by the measurements from the Slurry Mix Evaporator (SME) acceptability analysis. SRR has since requested that the necessary density information be provided to allow SRR to update the Excel spreadsheet so that it may be used to maintain fissile concentration in glass below 897 g/m{sup 3} during the processing of Sludge Batch 8 (SB8). One of the primary inputs into the fissile loading spreadsheet includes an upper bound for the density of SB8-based glasses. Thus, these bounding density values are to be used to assess the fissile concentration in this glass system. It should be noted that no changes are needed to the underlying structure of the Excel-based spreadsheet to support fissile assessments for SB8. However, SRR should update the other key inputs to the spreadsheet that are based on fissile and Fe concentrations reported from the SB8 Waste Acceptance Product Specification (WAPS) sample.

  9. Fiber optic coupled optical sensor

    DOE Patents [OSTI]

    Fleming, Kevin J. (Albuquerque, NM)

    2001-01-01

    A displacement sensor includes a first optical fiber for radiating light to a target, and a second optical fiber for receiving light from the target. The end of the first fiber is adjacent and not axially aligned with the second fiber end. A lens focuses light from the first fiber onto the target and light from the target onto the second fiber.

  10. In-situ TEM study of sodiation and failure mechanism of Sb anodes.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect In-situ TEM study of sodiation and failure mechanism of Sb anodes. Citation Details In-Document Search Title: In-situ TEM study of sodiation and failure mechanism of Sb anodes. Abstract not provided. Authors: XueHai Tan ; Jungjohann, Katherine Leigh ; Mook, William ; David Mitlin Publication Date: 2014-09-01 OSTI Identifier: 1241666 Report Number(s): SAND2014-18008D 537710 DOE Contract Number: AC04-94AL85000 Resource Type: Conference

  11. Nanoscale structure in AgSbTe2 determined by diffuse elastic neutron scattering

    SciTech Connect (OSTI)

    Specht, Eliot D [ORNL; Ma, Jie [ORNL; Delaire, Olivier A [ORNL; Budai, John D [ORNL; May, Andrew F [ORNL; Karapetrova, Evguenia A. [Argonne National Laboratory (ANL)

    2015-01-01

    Diffuse elastic neutron scattering measurements confirm that AgSbTe2 has a hierarchical structure, with defects on length scales from nanometers to microns. While scattering from mesoscale structure is consistent with previously-proposed structures in which Ag and Sb order on a NaCl lattice, more diffuse scattering from nanoscale structure suggests a structural rearrangement in which hexagonal layers form a combination of (ABC), (ABA), and (AAB) stacking sequences. The AgCrSe2 structure is the best-fitting model for the local atomic arrangements.

  12. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in energy science and

  13. High resolution InSb quantum well ballistic nanosensors for room temperature applications

    SciTech Connect (OSTI)

    Gilbertson, Adam; Cohen, L. F.; Lambert, C. J.; Solin, S. A.

    2013-12-04

    We report the room temperature operation of a quasi-ballistic InSb quantum well Hall sensor that exhibits a high frequency sensitivity of 560nT/?Hz at 20uA bias current. The device utilizes a partitioned buffer layer design that suppresses leakage currents through the mesa floor and can sustain large current densities.

  14. The radiation chemistry of Cs-7SB, a solvent modifier used in Cs and Sr extraction

    SciTech Connect (OSTI)

    Mincher, B.J.; Martin, L.R.; Elias, G.; Mezyk, S.P.

    2008-07-01

    The solvent modifier 1-(2,2,3,3-tetrafluoro-propoxy)-3-(4-sec-butylphenoxy)-2-propanol, (Cs- 7SB) is used in conjunction with calixarenes and crown ethers dissolved in alkane diluents for the extraction of Cs and Sr from highly radioactive solutions. Its purpose is to solvate the ligands and the resulting ligand-metal complexes in the organic phase. Given this role, and its relatively high concentration in the formulations used for solvent extraction, radiolytic degradation of Cs-7SB might decrease the extraction efficiency of these elements as the solvent accumulates absorbed radiation dose. This work presents the results of studies of Cs-7SB using post-radiolysis gas chromatography with electron-capture detection and solvent-extraction distribution-ratio measurements. Also presented is the kinetic analysis of the bimolecular rate constant for the modifier's reaction with nitrogen trioxide and nitrogen dioxide radicals, major radiolytically-produced radical species in irradiated aqueous nitric acid. Although Cs-7SB was found to undergo reactions with nitrogen-centered radicals, little decrease in extraction efficiency was found. It is concluded the modifier, always present at concentrations much higher than the ligands, acts as a radical scavenger, protecting ligands from radiolytic attack. (authors)

  15. Performance Study of K2CsSb Photocathode inside a DC High Voltage Gun

    SciTech Connect (OSTI)

    T. Rao, J. Smedley, J.M. Grames, R. Mammei, J.L. McCarter, M. Poelker, R. Suleiman

    2011-03-01

    In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K2CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the GaAs:Cs in RF injector and the K2CsSb cathode in the DC gun in order to widen our choices. Since the multialkali cathode is a compound with uniform stochiometry over its entire thickness, we anticipate that the life time issues seen in GaAs:Cs due surface damage by ion bombardment would be minimized with this material. Hence successful operation of the K2CsSb cathode in DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of K2CsSb cathode in a DC gun, we have designed and built a load lock system that would allow the fabrication of the cathode at BNL and its testing at JLab. In this paper, we will present the design of the load-lock system, cathode fabrication, and the cathode performance in the preparation chamber and in the DC gun.

  16. Structural phase transition and phonon instabilities in Cu12Sb4S13

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    May, Andrew F.; Delaire, Olivier A.; Niedziela, Jennifer L.; Lara-Curzio, Edgar; Susner, Michael A.; Abernathy, Douglas L.; Kirkham, Melanie J.; McGuire, Michael A.

    2016-02-08

    In this study, a structural phase transition has been discovered in the synthetic tetrahedrite Cu12Sb4S13 at approximately 88 K. Upon cooling, the material transforms from its known cubic symmetry to a tetragonal unit cell that is characterized by an in-plane ordering that leads to a doubling of the unit cell volume. Specific heat capacity measurements demonstrate a hysteresis of more than two degrees in the associated anomaly. A similar hysteresis was observed in powder x-ray diffraction measurements, which also indicate a coexistence of the two phases, and together these results suggest a first-order transition. This structural transition coincides with amore » recently-reported metal-insulator transition, and the structural instability is related to the very low thermal conductivity κ in these materials. Inelastic neutron scattering was used to measure the phonon density of states in Cu12Sb4S13 and Cu10Zn2Sb4S13, both of which possess a localized, low-energy phonon mode associated with strongly anharmonic copper displacements that suppress κ. In Cu12Sb4S13, signatures of the phase transition are observed in the temperature dependence of the localized mode, which disappears at the structural transition. In contrast, in the cubic Zn-doped material, the mode is at slightly higher-energy but observable for all temperatures, though it softens upon cooling.« less

  17. TANK 40 FINAL SB5 CHEMICAL CHARACTERIZATION RESULTS PRIOR TO NP ADDITION

    SciTech Connect (OSTI)

    Bannochie, C.; Click, D.

    2010-01-06

    A sample of Sludge Batch 5 (SB5) was pulled from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). This sample was also analyzed for chemical composition including noble metals. Prior to radionuclide inventory analyses, a final sample of the H-canyon Np stream will be added to bound the Np addition anticipated for Tank 40. These analyses along with the WAPS radionuclide analyses will help define the composition of the sludge in Tank 40 that is currently being fed to DWPF as SB5. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB5 sample was transferred from the shipping container into a 4-L high density polyethylene vessel and solids allowed to settle overnight. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 239 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon{reg_sign} vessels and four in Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Due to the use of Zr crucibles and Na in the peroxide fusions, Na and Zr cannot be determined from this preparation. Additionally, other alkali metals, such as Li and K that may be contaminants in the Na{sub 2}O{sub 2} are not determined from this preparation. Three Analytical Reference Glass - 14 (ARG-1) standards were digested along with a blank for each preparation. The ARG-1 glass allows for an assessment of the completeness of each digestion. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma - atomic emission spectroscopy (ICPAES) analysis, inductively coupled plasma - mass spectrometry (ICP-MS) analysis of masses 81-209 and 230-252, and cold vapor atomic absorption (CV-AA) analysis for Hg. Equivalent dilutions of the peroxide fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB5 supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES. Weighted dilutions of slurry were submitted for ion chromatography (IC), total inorganic carbon/total organic carbon (TIC/TOC), and total base analyses. The following conclusions were drawn from the analytical results reported here: (1) The elemental ratios of the major elements for the SB5 WAPS sample, whose major Tank 51 Qualification sample component underwent Al dissolution, are similar to those measured for the SB4 WAPS sample. (2) The elemental composition of this sample and the analyses conducted here are reasonable and consistent with DWPF batch data measurements in light of DWPF pre-sample concentration and SRAT product heel contributions to the DWPF SRAT receipt analyses. (3) Fifty percent of the sulfur in the SB5 WAPS sample is insoluble, and this represents a significantly larger fraction than that observed in previous sludge batches. (4) The noble metal and Ag concentrations predicted from the measured values for the Tank 51 Confirmation sample and Tank 40 SB4 WAPS sample using a two-thirds Tank 51, one-third Tank 40 heel blend ratio used to arrive at the final SB5 composition, agree with the values for the Tank 40 SB5 WAPS sample measured for this report.

  18. Optical analyzer

    DOE Patents [OSTI]

    Hansen, A.D.

    1987-09-28

    An optical analyzer wherein a sample of particulate matter, and particularly of organic matter, which has been collected on a quartz fiber filter is placed in a combustion tube, and light from a light source is passed through the sample. The temperature of the sample is raised at a controlled rate and in a controlled atmosphere. The magnitude of the transmission of light through the sample is detected as the temperature is raised. A data processor, differentiator and a two pen recorder provide a chart of the optical transmission versus temperature and the rate of change of optical transmission versus temperature signatures (T and D) of the sample. These signatures provide information as to physical and chemical processes and a variety of quantitative and qualitative information about the sample. Additional information is obtained by repeating the run in different atmospheres and/or different rates or heating with other samples of the same particulate material collected on other filters. 7 figs.

  19. Optical coupler

    DOE Patents [OSTI]

    Majewski, Stanislaw; Weisenberger, Andrew G.

    2004-06-15

    In a camera or similar radiation sensitive device comprising a pixilated scintillation layer, a light guide and an array of position sensitive photomultiplier tubes, wherein there exists so-called dead space between adjacent photomultiplier tubes the improvement comprising a two part light guide comprising a first planar light spreading layer or portion having a first surface that addresses the scintillation layer and optically coupled thereto at a second surface that addresses the photomultiplier tubes, a second layer or portion comprising an array of trapezoidal light collectors defining gaps that span said dead space and are individually optically coupled to individual position sensitive photomultiplier tubes. According to a preferred embodiment, coupling of the trapezoidal light collectors to the position sensitive photomultiplier tubes is accomplished using an optical grease having about the same refractive index as the material of construction of the two part light guide.

  20. Optical memory

    DOE Patents [OSTI]

    Mao, Samuel S; Zhang, Yanfeng

    2013-07-02

    Optical memory comprising: a semiconductor wire, a first electrode, a second electrode, a light source, a means for producing a first voltage at the first electrode, a means for producing a second voltage at the second electrode, and a means for determining the presence of an electrical voltage across the first electrode and the second electrode exceeding a predefined voltage. The first voltage, preferably less than 0 volts, different from said second voltage. The semiconductor wire is optically transparent and has a bandgap less than the energy produced by the light source. The light source is optically connected to the semiconductor wire. The first electrode and the second electrode are electrically insulated from each other and said semiconductor wire.

  1. Optical switch

    DOE Patents [OSTI]

    Reedy, R.P.

    1987-11-10

    An optical switching device is provided whereby light from a first glass fiber or a second glass fiber may be selectively transmitted into a third glass fiber. Each glass fiber is provided with a focusing and collimating lens system. In one mode of operation, light from the first glass fiber is reflected by a planar mirror into the third glass fiber. In another mode of operation, light from the second glass fiber passes directly into the third glass fiber. The planar mirror is attached to a rotatable table which is rotated to provide the optical switching. 3 figs.

  2. The tin impurity in Bi0.5Sb1.5Te3 alloys | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    The tin impurity in Bi0.5Sb1.5Te3 alloys The tin impurity in Bi0.5Sb1.5Te3 alloys Extends work on tin to p-type thermoelectric alloys of formula Bi(2-x)Sb(x)Te(3) doped with Sn. Both single crystals and polycrystals prepared using powder metallurgical techniques are studied and properties reported. PDF icon jaworski.pdf More Documents & Publications Resonant Level Enhancement of the Thermoelectric Power of Bi2Te3 with Tin DOE/NSF Thermoelectric Partnership Project SEEBECK Saving Energy

  3. Direct Evidence for Abrupt Postcrystallization Germanium Precipitation in Thin Phase-Change Films of Sb-15 at. % Ge

    SciTech Connect (OSTI)

    Cabral,C.; Krusin-Elbaum, L.; Bruley, J.; Raoux, S.; Deline, V.; Madan, A.; Pinto, T.

    2008-01-01

    We present evidence for the instability in the crystalline (metallic) state of binary Te-free phase-change Ge-Sb thin films considered for integration into nonvolatile nanosized memory cells. We find that while the amorphous (semiconducting) phase of eutectic Sb-15 at. % Ge is very robust until Sb crystallization at 240 C, at about 350 C, germanium rapidly precipitates out. Ge precipitation, visualized directly with transmission electron microscopy, is exothermic and is found to affect the films' reflectivity, resistance, and stress. It converts melting into a two-step process, which may seriously impact the switching reliability of a device.

  4. 1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Regularities of Angular Distribution of Near-Horizon Sky Brightness in the Cloudless Atmosphere S.M. Sakerin, T.B. Zhuravleva, and I.M. Nasrtdinov Institute of Atomospheric Optics SB RAS Tomsk, Russia Introduction The methods of sun-photometry of the atmosphere based, for example, on interpretation of the angular distribution of radiation in the solar almucantar are widely used for retrieval of the aerosol optical characteristics (Dubovik et al. 2000). Preliminary analysis has shown that the

  5. Temperature-dependent structural property and power factor of n type thermoelectric Bi{sub 0.90}Sb{sub 0.10} and Bi{sub 0.86}Sb{sub 0.14} alloys

    SciTech Connect (OSTI)

    Malik, K.; Das, Diptasikha; Bandyopadhyay, S.; Banerjee, Aritra; Center for Research in Nanoscience and Nanotechnology, University of Calcutta, JD-2, Sector-III, Saltlake City, Kolkata 700 098 ; Mandal, P.; Srihari, Velaga

    2013-12-09

    Thermal variation of structural property, linear thermal expansion coefficient (?), resistivity (?), thermopower (S), and power factor (PF) of polycrystalline Bi{sub 1-x}Sb{sub x} (x?=?0.10 and 0.14) samples are reported. Temperature-dependent powder diffraction experiments indicate that samples do not undergo any structural phase transition. Rietveld refinement technique has been used to perform detailed structural analysis. Temperature dependence of ? is found to be stronger for Bi{sub 0.90}Sb{sub 0.10}. Also, PF for direct band gap Bi{sub 0.90}Sb{sub 0.10} is higher as compared to that for indirect band gap Bi{sub 0.86}Sb{sub 0.14}. Role of electron-electron and electron-phonon scattering on ?, S, and PF has been discussed.

  6. Carrier localization and in-situ annealing effect on quaternary Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaAs quantum wells grown by Sb pre-deposition

    SciTech Connect (OSTI)

    Thoma, Jiri; Huyet, Guillaume; Tyndall National Institute, UCC, Lee Maltings, Cork ; Liang, Baolai; Huffaker, Diana L.; Lewis, Liam; Hegarty, Stephen P.

    2013-03-18

    Using temperature-dependent photoluminescence spectroscopy, we have investigated and compared intrinsic InGaAs, intrinsic GaInAsSb, and p-i-n junction GaInAsSb quantum wells (QWs) embedded in GaAs barriers. Strong carrier localization inside the intrinsic GaInAsSb/GaAs QW has been observed together with its decrease inside the p-i-n sample. This is attributed to the effect of an in-situ annealing during the top p-doped AlGaAs layer growth at an elevated temperature of 580 Degree-Sign C, leading to Sb-atom diffusion and even atomic redistribution. High-resolution X-ray diffraction measurements and the decrease of both maximum localization energy and full delocalization temperature in the p-i-n QW sample further corroborated this conclusion.

  7. Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

    SciTech Connect (OSTI)

    Bremner, S. P.; Ban, K.-Y.; Faleev, N. N.; Honsberg, C. B.; Smith, D. J.

    2013-09-14

    We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60 dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

  8. Sandia Energy - Quantum Optics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Quantum Optics Home Energy Research EFRCs Solid-State Lighting Science EFRC Quantum Optics Quantum OpticsTara Camacho-Lopez2015-03-30T16:37:03+00:00 Quantum Optics with a Single...

  9. Quantum Optics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Quantum Optics - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Fuel Cycle Defense Waste Management Programs Advanced Nuclear

  10. Time-course analysis of the Shewanella amazonensis SB2B proteome in response to sodium chloride shock

    SciTech Connect (OSTI)

    Parnell, John J.; Callister, Stephen J.; Rompato, Giovanni; Nicora, Carrie D.; Pasa-Tolic, Ljiljana; Williamson, Ashley; Pfrender, Michael E.

    2011-06-29

    Organisms in the genus Shewanella have become models for response to environmental stress. One of the most important environmental stresses is change in osmolarity. In this study, we experimentally determine the response mechanisms of Shewanella amazonensis SB2B during osmotic stress. Osmotic stress in SB2B was induced through exposure to NaCl, and the time-course proteomics response was measured using liquid chromatography mass spectrometry. Protein trends were qualitatively compared to gene expression trends and to phenotypic characterization. Osmotic stress affects motility, and has also been associated with a change in the membrane fatty acid composition (due to induction of branched chain amino acid degradation pathways); however, we show this is not the case for SB2B. Although proteins and genes involved with branched chain amino acid degradation are induced, fatty acid degradation pathways are not induced and no change in the fatty acid profile occurs in SB2B as a result of osmotic shock. The most extensive response of SB2B over the time course of acclimation to high salt involves an orchestrated sequence of events comprising increased expression of signal transduction associated with motility and restricted cell division and DNA replication. After SB2B has switched to increased branched chain amino acid degradation, motility, and cellular replication proteins return to pre-perturbed levels.

  11. Two-dimensional topological crystalline insulator phase in Sb/Bi planar honeycomb with tunable Dirac gap

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hsu, Chia -Hsiu; Huang, Zhi -Quan; Crisostomo, Christian P.; Yao, Liang -Zi; Chuang, Feng -Chuan; Liu, Yu -Tzu; Wang, Baokai; Hsu, Chuang -Han; Lee, Chi -Cheng; Lin, Hsin; et al

    2016-01-14

    We predict planar Sb/Bi honeycomb to harbor a two-dimensional (2D) topological crystalline insulator (TCI) phase based on first-principles computations. Although buckled Sb and Bi honeycombs support 2D topological insulator (TI) phases, their structure becomes planar under tensile strain. The planar Sb/Bi honeycomb structure restores the mirror symmetry, and is shown to exhibit non-zero mirror Chern numbers, indicating that the system can host topologically protected edge states. Our computations show that the electronic spectrum of a planar Sb/Bi nanoribbon with armchair or zigzag edges contains two Dirac cones within the band gap and an even number of edge bands crossing themore » Fermi level. Lattice constant of the planar Sb honeycomb is found to nearly match that of hexagonal-BN. As a result, the Sb nanoribbon on hexagonal-BN exhibits gapped edge states, which we show to be tunable by an out-of the-plane electric field, providing controllable gating of edge state important for device applications.« less

  12. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    SciTech Connect (OSTI)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-03-22

    The stability of the crystalline phase of binary phase-change Ge{sub x}Sb{sub 1-x} films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T{sub Ge}{sup p} to the rate of change dT{sub cryst}/dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T{sub cryst} is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  13. Optical analyzer

    DOE Patents [OSTI]

    Hansen, Anthony D. (Berkeley, CA)

    1989-01-01

    An optical analyzer (10) wherein a sample (19) of particulate matter, and particularly of organic matter, which has been collected on a quartz fiber filter (20) is placed in a combustion tube (11), and light from a light source (14) is passed through the sample (19). The temperature of the sample (19) is raised at a controlled rate and in a controlled atmosphere. The magnitude of the transmission of light through the sample (19) is detected (18) as the temperature is raised. A data processor (23), differentiator (28) and a two pen recorder (24) provide a chart of the optical transmission versus temperature and the rate of change of optical transmission versus temperature signatures (T and D) of the sample (19). These signatures provide information as to physical and chemical processes and a variety of quantitative and qualitative information about the sample (19). Additional information is obtained by repeating the run in different atmospheres and/or different rates of heating with other samples of the same particulate material collected on other filters.

  14. Fiber optic monitoring device

    DOE Patents [OSTI]

    Samborsky, James K. (605 Groves Blvd., N. Augusta, SC 29841)

    1993-01-01

    A device for the purpose of monitoring light transmissions in optical fibers comprises a fiber optic tap that optically diverts a fraction of a transmitted optical signal without disrupting the integrity of the signal. The diverted signal is carried, preferably by the fiber optic tap, to a lens or lens system that disperses the light over a solid angle that facilitates viewing. The dispersed light indicates whether or not the monitored optical fiber or system of optical fibers is currently transmitting optical information.

  15. Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    SciTech Connect (OSTI)

    Lu, Q.; Zhuang, Q.; Hayton, J.; Yin, M.; Krier, A.

    2014-07-21

    There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1??m have been demonstrated and characterized. The gain was determined to be 2.9?cm{sup ?1} per QD layer, and the waveguide loss was ?15?cm{sup ?1} at 4?K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T{sub 0}?=?101?K below 50?K, but decreased to 48?K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs{sub 0.61}Sb{sub 0.13}P{sub 0.26} lower cladding layer and an upper n{sup +} InAs plasmon cladding layer which resulted in a maximum operating temperature (T{sub max}) of 120?K in pulsed mode, which is the highest reported to date.

  16. Parallel optical sampler

    DOE Patents [OSTI]

    Tauke-Pedretti, Anna; Skogen, Erik J; Vawter, Gregory A

    2014-05-20

    An optical sampler includes a first and second 1.times.n optical beam splitters splitting an input optical sampling signal and an optical analog input signal into n parallel channels, respectively, a plurality of optical delay elements providing n parallel delayed input optical sampling signals, n photodiodes converting the n parallel optical analog input signals into n respective electrical output signals, and n optical modulators modulating the input optical sampling signal or the optical analog input signal by the respective electrical output signals, and providing n successive optical samples of the optical analog input signal. A plurality of output photodiodes and eADCs convert the n successive optical samples to n successive digital samples. The optical modulator may be a photodiode interconnected Mach-Zehnder Modulator. A method of sampling the optical analog input signal is disclosed.

  17. Ultrafast terahertz-induced response of GeSbTe phase-change materials...

    Office of Scientific and Technical Information (OSTI)

    films has been measured all-optically, pumping with single-cycle terahertz pulses as a ... GERMANIUM COMPOUNDS; HEATING; OPTICAL PUMPING; PHASE CHANGE MATERIALS; RELAXATION; ...

  18. Optical microfluidics

    SciTech Connect (OSTI)

    Kotz, K.T.; Noble, K.A.; Faris, G.W. [Molecular Physics Laboratory, SRI International, 333 Ravenswood Avenue, Menlo Park, California 94025 (United States)

    2004-09-27

    We present a method for the control of small droplets based on the thermal Marangoni effect using laser heating. With this approach, droplets covering five orders of magnitude in volume ({approx}1.7 {mu}L to 14 pL), immersed in decanol, were moved on an unmodified polystyrene surface, with speeds of up to 3 mm/s. When two droplets were brought into contact, they spontaneously fused and rapidly mixed in less than 33 ms. This optically addressed microfluidic approach has many advantages for microfluidic transport, including exceptional reconfigurability, low intersample contamination, large volume range, extremely simple substrates, no electrical connections, and ready scaling to large arrays.

  19. Optical devices

    DOE Patents [OSTI]

    Chaves, Julio C.; Falicoff, Waqidi; Minano, Juan C.; Benitez, Pablo; Dross, Oliver; Parkyn, Jr., William A.

    2010-07-13

    An optical manifold for efficiently combining a plurality of blue LED outputs to illuminate a phosphor for a single, substantially homogeneous output, in a small, cost-effective package. Embodiments are disclosed that use a single or multiple LEDs and a remote phosphor, and an intermediate wavelength-selective filter arranged so that backscattered photoluminescence is recycled to boost the luminance and flux of the output aperture. A further aperture mask is used to boost phosphor luminance with only modest loss of luminosity. Alternative non-recycling embodiments provide blue and yellow light in collimated beams, either separately or combined into white.

  20. Optical microphone

    DOE Patents [OSTI]

    Veligdan, James T. (Manorville, NY)

    2000-01-11

    An optical microphone includes a laser and beam splitter cooperating therewith for splitting a laser beam into a reference beam and a signal beam. A reflecting sensor receives the signal beam and reflects it in a plurality of reflections through sound pressure waves. A photodetector receives both the reference beam and reflected signal beam for heterodyning thereof to produce an acoustic signal for the sound waves. The sound waves vary the local refractive index in the path of the signal beam which experiences a Doppler frequency shift directly analogous with the sound waves.

  1. Optical interconnect assembly

    DOE Patents [OSTI]

    Laughlin, Daric; Abel, Philip

    2015-06-09

    An optical assembly includes a substrate with a first row of apertures and a second row of apertures. A first optical die includes a first plurality of optical transducer elements and is mounted on the substrate such that an optical signal interface of each transducer element is aligned with an aperture of the first row of optical apertures. A second optical die includes a second plurality of optical transducer elements and is mounted on the substrate such that an optical signal interface of each of the second plurality of optical transducer elements is aligned with an aperture of the second row of optical apertures. A connector configured to mate with the optical assembly supports a plurality of optical fibers. A terminal end of each optical fiber protrudes from the connector and extends into one of the apertures when the connector is coupled with the optical assembly.

  2. Microstructural evaluation of Sb-adjusted Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer layer systems for IR applications

    SciTech Connect (OSTI)

    Chen, E.; Paine, D.C.; Uppal, P.; Ahearn, J.S.; Nichols, K.; Charache, G.W.

    1998-06-01

    The authors report on a transmission electron microscopy (TEM) study of Sb-adjusted quaternary Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBE at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on <001> GaAs substrates. A series of structures were grown by MBe at 470 C that utilize a multilayer grading scheme in which the Sb content of Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} is successively increased in a series of 125 nm thick layers. Post growth analysis using conventional bright field and weak beam dark field imaging of these buffer layers in cross-section reveals that the interface misfit dislocations are primarily of the 60{degree} type and are distributed through out the interfaces of the buffer layer. When optimized, the authors have shown, using plan view and cross-sectional TEM, that this approach can reduce the threading defect density to below the detectability limit of TEM (< 10{sup 5}/cm{sup 2}) and preserve growth surface planarity. The Sb-graded approach was used to fabricate two 2.2 {micro}m power converter structures fabricated using InGaAs grown on Sb-based buffer layers on GaAs substrates. A microstructural and electrical characterization was performed on these device structures and the results are contrasted with a sample in which InP was selected as the substrate. Microstructure, defect density and device performance in these not-yet-optimized Sb-based buffer layers compares favorably to equivalent devices fabricated using InP substrates.

  3. Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Wang, Juan; Xing, Jun-Liang; Xiang, Wei; Wang, Guo-Wei; Xu, Ying-Qiang; Ren, Zheng-Wei; Niu, Zhi-Chuan

    2014-02-03

    Modulation-doped In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum-well (QW) structures were grown by molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy studies show high crystalline quality and smooth surface morphology. X-ray diffraction investigations confirm 1.94% compressive strain within In{sub 0.41}Ga{sub 0.59}Sb channel. High room temperature hole mobility with high sheet density of 1000 cm{sup 2}/Vs, 0.877??10{sup 12}/cm{sup 2}, and 965 cm{sup 2}/Vs, 1.112??10{sup 12}/cm{sup 2} were obtained with different doping concentrations. Temperature dependent Hall measurements show different scattering mechanisms on hole mobility at different temperature range. The sheet hole density keeps almost constantly from 300?K to 77?K. This study shows great potential of In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb QW for high-hole-mobility device applications.

  4. Optical manifold

    DOE Patents [OSTI]

    Falicoff, Waqidi; Chaves, Julio C.; Minano, Juan Carlos; Benitez, Pablo; Dross, Oliver; Parkyn, Jr., William A.

    2010-02-23

    Optical systems are described that have at least one source of a beam of blue light with divergence under 15.degree.. A phosphor emits yellow light when excited by the blue light. A collimator is disposed with the phosphor and forms a yellow beam with divergence under 15.degree.. A dichroic filter is positioned to transmit the beam of blue light to the phosphor and to reflect the beam of yellow light to an exit aperture. In different embodiments, the beams of blue and yellow light are incident upon said filter with central angles of 15.degree., 22.degree., and 45.degree.. The filter may reflect all of one polarization and part of the other polarization, and a polarization rotating retroreflector may then be provided to return the unreflected light to the filter.

  5. Superconductivity in strong spin orbital coupling compound Sb2Se3

    SciTech Connect (OSTI)

    Kong, P. P.; Sun, F.; Xing, L. Y.; Zhu, J.; Zhang, S. J.; Li, W. M.; Liu, Q. Q.; Wang, X. C.; Feng, S. M.; Yu, X. H.; Zhu, J. L.; Yu, R. C.; Yang, W. G.; Shen, G. Y.; Zhao, Y. S.; Ahuja, R.; Mao, H. K.; Jin, C. Q.

    2014-10-20

    Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand was found to be topological trivial, but theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial state. We report on the discovery of superconductivity in Sb2Se3 single crystal induced via pressure. Our experiments indicated that Sb2Se3 became superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition at ~3 GPa which should be related to the topological quantum transition. The superconducting transition temperature (TC) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. As a result, high pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of TC slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.

  6. Unusual magnetic hysteresis and the weakened transition behavior induced by Sn substitution in Mn{sub 3}SbN

    SciTech Connect (OSTI)

    Sun, Ying, E-mail: sunying@buaa.edu.cn [Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191 (China); International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Guo, Yanfeng; Li, Jun; Wang, Xia [Superconducting Properties Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Tsujimoto, Yoshihiro [Materials Processing Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Wang, Cong [Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191 (China); Feng, Hai L.; Sathish, Clastin I.; Yamaura, Kazunari, E-mail: yamaura.kazunari@nims.go.jp [Superconducting Properties Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Matsushita, Yoshitaka [Analysis Station, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-01-28

    Substitution of Sb with Sn was achieved in ferrimagnetic antiperovskite Mn{sub 3}SbN. The experimental results indicate that with an increase in Sn concentration, the magnetization continuously decreases and the crystal structure of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N changes from tetragonal to cubic phase at around x of 0.8. In the doping series, step-like anomaly in the isothermal magnetization was found and this behavior was highlighted at x?=?0.4. The anomaly could be attributed to the magnetic frustration, resulting from competition between the multiple spin configurations in the antiperovskite lattice. Meantime, H{sub c} of 18 kOe was observed at x?=?0.3, which is probably the highest among those of manganese antiperovskite materials reported so far. With increasing Sn content, the abrupt change of resistivity and the sharp peak of heat capacity in Mn{sub 3}SbN were gradually weakened. The crystal structure refinements indicate the weakened change at the magnetic transition is close related to the change of c/a ratio variation from tetragonal to cubic with Sn content. The results derived from this study indicate that the behavior of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N could potentially enhance its scientific and technical applications, such as spin torque transfer and hard magnets.

  7. Optical data latch

    DOE Patents [OSTI]

    Vawter, G. Allen

    2010-08-31

    An optical data latch is formed on a substrate from a pair of optical logic gates in a cross-coupled arrangement in which optical waveguides are used to couple an output of each gate to an photodetector input of the other gate. This provides an optical bi-stability which can be used to store a bit of optical information in the latch. Each optical logic gate, which can be an optical NOT gate (i.e. an optical inverter) or an optical NOR gate, includes a waveguide photodetector electrically connected in series with a waveguide electroabsorption modulator. The optical data latch can be formed on a III-V compound semiconductor substrate (e.g. an InP or GaAs substrate) from III-V compound semiconductor layers. A number of optical data latches can be cascaded to form a clocked optical data shift register.

  8. Hybridized Nature of Pseudogap in Kondo Insulators CeRhSb and CeRhAs

    SciTech Connect (OSTI)

    Kumigashira, H.; Takahashi, T.; Yoshii, S.; Kasaya, M.

    2001-08-06

    We studied the electronic structure of Kondo insulators CeRhSb and CeRhAs using high-resolution photoemission spectroscopy. We found that the 4f -derived density of states shows a depletion (pseudogap) at E{sub F} in contrast to metallic Kondo materials. It was found that the size of the f pseudogap is smaller than that of conduction electrons (c pseudogap) while both scale well with the Kondo temperature. The present results indicate that the hybridization between 4f and conduction electrons near E{sub F} is essential for the Kondo gap in the Ce-based compounds.

  9. Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors

    DOE Patents [OSTI]

    Biefeld, Robert M. (Albuquerque, NM); Dawson, L. Ralph (Albuquerque, NM); Fritz, Ian J. (Albuquerque, NM); Kurtz, Steven R. (Albuquerque, NM); Zipperian, Thomas E. (Albuquerque, NM)

    1991-01-01

    A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.

  10. Production and properties of Si-SiO2-In Sb structures

    SciTech Connect (OSTI)

    Padalko, A.G.; Kotov, B.A.; Lazarev, V.B.; Sukharev, V.I.; Volkov, V.V.

    1985-10-01

    When MIS structures are formed by pyrolysis of silane with subsequent thermal oxidation of the film of polycrystalline silicon on sapphire and with oriented crystallization of thin layers of an indium antimonide melt on the produced structures, the highly doped silicon-silicon dioxide-InSb has a concentration of majority charge carriers of (2-5) . 10/sup 15/ cm/sup -9/ with a density of surface states of (2-8) . 10/sup 11/ ev/sup -1/ . cm/sup -2/.

  11. Hybrid Back Surface Reflector GaInAsSb Thermophotovoltaic Devices

    SciTech Connect (OSTI)

    RK Huang; CA Wang; MK Connors; GW Turner; M Dashiell

    2004-05-11

    Back surface reflectors have the potential to improve thermophotovoltaic (TPV) device performance though the recirculation of infrared photons. The ''hybrid'' back-surface reflector (BSR) TPV cell approach allows one to construct BSRs for TPV devices using conventional, high efficiency, GaInAsSb-based TPV material. The design, fabrication, and measurements of hybrid BSR-TPV cells are described. The BSR was shown to provide a 4 mV improvement in open-circuit voltage under a constant shortcircuit current, which is comparable to the 5 mV improvement theoretically predicted. Larger improvements in open-circuit voltage are expected in the future with materials improvements.

  12. Optical absorption measurement system

    DOE Patents [OSTI]

    Draggoo, Vaughn G. (Livermore, CA); Morton, Richard G. (San Diego, CA); Sawicki, Richard H. (Pleasanton, CA); Bissinger, Horst D. (Livermore, CA)

    1989-01-01

    The system of the present invention contemplates a non-intrusive method for measuring the temperature rise of optical elements under high laser power optical loading to determine the absorption coefficient. The method comprises irradiating the optical element with a high average power laser beam, viewing the optical element with an infrared camera to determine the temperature across the optical element and calculating the absorption of the optical element from the temperature.

  13. Depth-dependent magnetism in epitaxial MnSb thin films: effects of surface passivation and cleaning

    SciTech Connect (OSTI)

    Aldous J. D.; Sanchez-Hanke C.; Burrows, C.W.; Maskery, I.; Brewer, M.S.; Hase, T.P.A.; Duffy, J.A.; Lees, M. Rs; Decoster, T.; Theis, W.; Quesada, A.; Schmid, A.K.; Bell, G.R.

    2012-03-15

    Depth-dependent magnetism in MnSb(0001) epitaxial films has been studied by combining experimental methods with different surface specificities: polarized neutron reflectivity, x-ray magnetic circular dichroism (XMCD), x-ray resonant magnetic scattering and spin-polarized low energy electron microscopy (SPLEEM). A native oxide {approx}4.5 nm thick covers air-exposed samples which increases the film's coercivity. HCl etching efficiently removes this oxide and in situ surface treatment of etched samples enables surface magnetic contrast to be observed in SPLEEM. A thin Sb capping layer prevents oxidation and preserves ferromagnetism throughout the MnSb film. The interpretation of Mn L{sub 3,2} edge XMCD data is discussed.

  14. SB6.0: The 6th International meeting on Synthetic Biology, July 9-11, 2013

    SciTech Connect (OSTI)

    Kahl, Linda J.

    2015-04-23

    The Synthetic Biology conference series (SBx.0) is the preeminent academic meeting in synthetic biology. Organized by the BioBricks Foundation, the SBx.0 conference series brings together leading researchers, students, industry executives, and policy makers from around the world to share, consider, debate, and plan efforts to make biology easier to engineer. Historically held every two years, the SBx.0 conferences are held in alternating locations in the United States, Europe, and Asia to encourage global participation and collaboration so that the ramifications of synthetic biology research and development are most likely to be safe ethical, and beneficial. On 9-11 July 2013, the 6th installment of the synthetic biology conference series (SB6.0) was held on the campus of Imperial College London (http://sb6.biobricks.org). The SB6.0 conference was attended by over 700 people, and many more were able to participate via video digital conference (http://sb6.biobricks.org/digital-conference/). Over the course of three days, the SB6.0 conference agenda included plenary sessions, workshops, and poster presentations covering topics ranging from the infrastructure needs arising when Systematic Engineering Meets Biological Complexity and design-led considerations for Connecting People and Technologies to discussions on Engineering Biology for New Materials, Assessing Risk and Managing Biocontainment, and New Directions for Energy and Sustainability. The $10,150 grant awarded by the U.S. Department of Energy (DE-SC0010233) to the BioBricks Foundation was used to provide partial reimbursement for the travel expenses of leading researchers from the United States to speak at the SB6.0 conference. A total of $9,450 was used to reimburse U.S. speakers for actual expenses related to the SB6.0 conference, including airfare (economy or coach only), ground transportation, hotel, and registration fees. In addition, $700 of the grant was used to offset direct administrative costs associated with selecting speakers (preparing announcements, evaluating abstract submissions) and handling travel arrangements. Leading U.S. researchers selected to speak at the SB6.0 conference included: Adam Arkin, Ph.D. Division Director of the Physical Biosciences Division at the Lawrence Berkeley National Laboratory and Professor in the Department of Bioengineering at UC Berkeley Jay Keasling, Ph.D. Professor in the Department of Bioengineering at Berkeley, Senior Faculty Scientist and Associate Laboratory Director of the Lawrence Berkeley National Laboratory, and Chief Executive Officer of the Joint BioEnergy Institute. Debra Mathews, Ph.D. Assistant Director for Science Programs for the Johns Hopkins Berman Institute of Bioethics, Assistant Professor in the Department of Pediatrics, and Affiliate Faculty in the McKusick-Nathans Institute of Genetic Medicine, Johns Hopkins School of Medicine. Richard Murray, Ph.D. Thomas E. and Doris Everhart Professor of Control & Dynamical Systems and Bioengineering at Caltech. Sarah Richardson, Ph.D. Distinguished Postdoctoral Fellow in Genomics at the Lawrence Berkeley National Laboratory and the Department of Energy Joint Genome Institute. and others (for a complete listing of speakers presenting at the SB6.0 conference see http://sb6.biobricks.org/speakers/) The SB6.0 conference was the largest synthetic biology conference to date, and highlights of the SB6.0 conference have been published in a special issue of ACS Synthetic Biology (http://pubs.acs.org/toc/asbcd6/3/3). The BioBricks Foundation appreciates the support of the U.S. Department of Energy in helping to make this most influential and important conference in the field of synthetic biology a success.

  15. 1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Generalization of Stochastic Radiative Transfer Model: Multiple Broken Layers E. Kassianov Pacific Northwest National Laboratory Richland, Washington and Institute of Atmospheric Optics SB RAS Russia Introduction The problem of stochastic radiative transfer in clouds has been aimed at establishing the relationship between the statistical parameters of clouds and radiation. Although the necessity of such treatment was acknowledged long ago and several approaches were suggested (see, e.g., Cahalan

  16. 1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Spectral Fluxes of Solar Radiation in Broken Clouds: Algorithms for Calculation T. B. Zhuravleva and K. M. Firsov Institute of Atmospheric Optics SB RAS Tomsk, Russia Introduction The most Atmospheric Radiation Measurement (ARM) clear- and cloudy- sky radiation experi- ments have been performed with broadband fluxes. Because the fluxes are integrated over wavelength, it is difficult to understand the causes of unavoidable differences between calculated and observed broadband fluxes in those

  17. zuev(2)-99.PDF

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Impact of Volcanic Aerosol on Mean Fluxes of Solar Radiation in Broken Clouds V. V. Zuev and T. B. Zhuravleva Institute of Atmospheric Optics SB RAS Tomsk, Russia Introduction One of the powerful means of detecting the volcanic effect on the earth's radiation budget and, hence, on the earth's climate is numerical modeling. However, the atmospheric processes, during and after the eruption, are too complex and frequently prohibit an adequate description of the non-unique effect of volcanic

  18. Surface collective modes in the topological insulators Bi2Se3 and Bi0.5Sb1.5Te3-xSex

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kogar, A.; Gu, G.; Vig, S.; Thaler, A.; Wong, M. H.; Xiao, Y.; Reig-i-Plessis, D.; Cho, G. Y.; Valla, T.; Pan, Z.; et al

    2015-12-15

    In this study, we used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi2Se3 and Bi0.5Sb1.5Te3-xSex. Our goal was to identify the “spin plasmon” predicted by Raghu and co-workers [Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a surface plasmon arising from the bulk, free carriers in these materials. This excitation dominates the spectral weight in the bosonic function of the surface χ''(q,ω) at THz energy scales, and is the most likely origin of a quasiparticle dispersion kink observed in previous photoemission experiments. Our study suggestsmore » that the spin plasmon may mix with this other surface mode, calling for a more nuanced understanding of optical experiments in which the spin plasmon is reported to play a role.« less

  19. Antiferromagnetism in EuCu2As2 and EuCu1.82Sb2 single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Anand, V. K.; Johnston, D. C.

    2015-05-07

    Single crystals of EuCu2As2 and EuCu2Sb2 were grown from CuAs and CuSb self-flux, respectively. The crystallographic, magnetic, thermal, and electronic transport properties of the single crystals were investigated by room-temperature x-ray diffraction (XRD), magnetic susceptibility χ versus temperature T, isothermal magnetization M versus magnetic field H, specific heat Cp(T), and electrical resistivity ρ(T) measurements. EuCu2As2 crystallizes in the body-centered tetragonal ThCr2Si2-type structure (space group I4/mmm), whereas EuCu2Sb2 crystallizes in the related primitive tetragonal CaBe2Ge2-type structure (space group P4/nmm). The energy-dispersive x-ray spectroscopy and XRD data for the EuCu2Sb2 crystals showed the presence of vacancies on the Cu sites, yielding themore » actual composition EuCu1.82Sb2. The ρ(T) and Cp(T) data reveal metallic character for both EuCu2As2 and EuCu1.82Sb2. Antiferromagnetic (AFM) ordering is indicated from the χ(T),Cp(T), and ρ(T) data for both EuCu2As2 (TN = 17.5 K) and EuCu1.82Sb2 (TN = 5.1 K). In EuCu1.82Sb2, the ordered-state χ(T) and M(H) data suggest either a collinear A-type AFM ordering of Eu+2 spins S = 7/2 or a planar noncollinear AFM structure, with the ordered moments oriented in the tetragonal ab plane in either case. This ordered-moment orientation for the A-type AFM is consistent with calculations with magnetic dipole interactions. As a result, the anisotropic χ(T) and isothermal M(H) data for EuCu2As2, also containing Eu+2 spins S = 7/2, strongly deviate from the predictions of molecular field theory for collinear AFM ordering and the AFM structure appears to be both noncollinear and noncoplanar.« less

  20. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

    DOE Patents [OSTI]

    Sherohman, John W.; Coombs, III, Arthur W.; Yee, Jick Hong; Wu, Kuang Jen J.

    2007-05-29

    For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

  1. Electronic and Magnetic Properties of Li1.5Mn0.5As Alloys in the Cu2Sb

    Office of Scientific and Technical Information (OSTI)

    Structure (Conference) | SciTech Connect Conference: Electronic and Magnetic Properties of Li1.5Mn0.5As Alloys in the Cu2Sb Structure Citation Details In-Document Search Title: Electronic and Magnetic Properties of Li1.5Mn0.5As Alloys in the Cu2Sb Structure × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize

  2. Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub

    Office of Scientific and Technical Information (OSTI)

    0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy (Journal Article) | SciTech Connect Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy Citation Details In-Document Search Title: Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy Modulation-doped In{sub 0.41}Ga{sub

  3. The Role of Anti-Phase Domains in InSb-Based Structures Grown on On-Axis and Off-Axis Ge Substrates

    SciTech Connect (OSTI)

    Debnath, M. C.; Mishima, T. D.; Santos, M. B.; Hossain, K.; Holland, O. W.

    2011-12-26

    Anti-phase domains form in InSb epilayers and InSb/Al{sub 0.20}In{sub 0.80}Sb single quantum wells when grown upon on-axis (001) Ge substrates by molecular beam epitaxy. Domain formation is partially suppressed through growth on Ge substrates with surfaces that are several degrees off the (001) or (211) axis. By using off-axis Ge substrates, room-temperature electron mobilities increased to {approx}60,000 cm{sup 2}/V-s and {approx}14,000 cm{sup 2}/V-s for a 4.0-{mu}m-thick InSb epilayer and a 25-nm InSb quantum well, respectively.

  4. VolmerWeber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

    SciTech Connect (OSTI)

    Zhao, Yu Bertru, Nicolas; Folliot, Herv; Rohel, Tony; Mauger, Samuel J. C.; Koenraad, Paul M.

    2014-07-21

    We report on Sb surfactant growth of InAs nanostructures on GaAs{sub 0.51}Sb{sub 0.49} layers deposited on InP (001) and on (113)B oriented substrates. On the (001) orientation, the presence of Sb significantly favors the two-dimensional growth regime. Even after the deposition of 5 mono-layers of InAs, the epitaxial film remains flat and InAs/GaAs{sub 0.51}Sb{sub 0.49} type-II quantum wells are achieved. On (113)B substrates, same growth runs resulted in formation of high density InAs islands. Microscopic studies show that wetting layer is missing on (113)B substrates, and thus, a Volmer-Weber growth mode is concluded. These different behaviors are attributed to the surface energy changes induced by Sb atoms on surface.

  5. Optical NAND gate

    DOE Patents [OSTI]

    Skogen, Erik J.; Raring, James; Tauke-Pedretti, Anna

    2011-08-09

    An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  6. System of laser pump and synchrotron radiation probe microdiffraction to investigate optical recording process

    SciTech Connect (OSTI)

    Yasuda, Nobuhiro; Fukuyama, Yoshimitsu; Osawa, Hitoshi; Kimura, Shigeru; Ito, Kiminori; Tanaka, Yoshihito; Matsunaga, Toshiyuki; Kojima, Rie; Hisada, Kazuya; Tsuchino, Akio; Birukawa, Masahiro; Yamada, Noboru; Sekiguchi, Koji; Fujiie, Kazuhiko; Kawakubo, Osamu; Takata, Masaki

    2013-06-15

    We have developed a system of laser-pump and synchrotron radiation probe microdiffraction to investigate the phase-change process on a nanosecond time scale of Ge{sub 2}Sb{sub 2}Te{sub 5} film embedded in multi-layer structures, which corresponds to real optical recording media. The measurements were achieved by combining (i) the pump-laser system with a pulse width of 300 ps, (ii) a highly brilliant focused microbeam with wide peak-energy width ({Delta}E/E {approx} 2%) made by focusing helical undulator radiation without monochromatization, and (iii) a precise sample rotation stage to make repetitive measurements. We successfully detected a very weak time-resolved diffraction signal by using this system from 100-nm-thick Ge{sub 2}Sb{sub 2}Te{sub 5} phase-change layers. This enabled us to find the dependence of the crystal-amorphous phase change process of the Ge{sub 2}Sb{sub 2}Te{sub 5} layers on laser power.

  7. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials...

    Office of Scientific and Technical Information (OSTI)

    C.; Pop, Eric; Wong, H.-S.Philip; Wuttig, Matthias; Lindenberg, Aaron M. MATSCI, OPTICS, PHYS MATSCI, OPTICS, PHYS Abstract Not Provided http:www-public.slac.stanford.edu...

  8. CaMn2Sb2: Spin waves on a frustrated antiferromagnetic honeycomb lattice

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    McNally, D. E.; Simonson, J. W.; Kistner-Morris, J. J.; Smith, G. J.; Hassinger, J. E.; DeBeer-Schmidt, L.; Kolesnikov, A. I.; Zaliznyak, I.; Aronson, M. C.

    2015-05-22

    We present inelastic neutron scattering measurements of the antiferromagnetic insulator CaMn2Sb2:, which consists of corrugated honeycomb layers of Mn. The dispersion of magnetic excitations has been measured along the H and L directions in reciprocal space, with a maximum excitation energy of ≈ 24 meV. These excitations are well described by spin waves in a Heisenberg model, including first and second neighbor exchange interactions, J1 and J2, in the Mn plane and also an exchange interaction between planes. The determined ratio J2/J1 ≈ 1/6 suggests that CaMn2Sb2: is the first example of a compound that lies very close to themore »mean field tricritical point, known for the classical Heisenberg model on the honeycomb lattice, where the N´eel phase and two different spiral phases coexist. The magnitude of the determined exchange interactions reveal a mean field ordering temperature ≈ 4 times larger than the reported N´eel temperature TN = 85 K, suggesting significant frustration arising from proximity to the tricritical point.« less

  9. SPIE Optics + Photonics 2011

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SPIE Optics + Photonics 2011 August 21-25, 2011 San Diego Convention Center San Diego

  10. Optical NOR gate

    DOE Patents [OSTI]

    Skogen, Erik J.; Tauke-Pedretti, Anna

    2011-09-06

    An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  11. Optical XOR gate

    DOE Patents [OSTI]

    Vawter, G. Allen

    2013-11-12

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  12. Fiber optic connector

    DOE Patents [OSTI]

    Rajic, S.; Muhs, J.D.

    1996-10-22

    A fiber optic connector and method for connecting composite materials within which optical fibers are imbedded are disclosed. The fiber optic connector includes a capillary tube for receiving optical fibers at opposing ends. The method involves inserting a first optical fiber into the capillary tube and imbedding the unit in the end of a softened composite material. The capillary tube is injected with a coupling medium which subsequently solidifies. The composite material is machined to a desired configuration. An external optical fiber is then inserted into the capillary tube after fluidizing the coupling medium, whereby the optical fibers are coupled. 3 figs.

  13. Advanced Optical Technologies

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advanced Optical Technologies The Advanced Optical Components and Technologies program develops, creates and provides critical optical components for laser-based missions at LLNL. Past projects focused on kinoform phase plates for LLNL's Nova laser and on large-area, submicron-pitch holographic diffraction gratings for LLNL's Petawatt (1015 watt) ultrashort-pulse laser. Today, the optical team designs and fabricates a variety of custom diffractive optics for researchers worldwide. Included are

  14. Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

    SciTech Connect (OSTI)

    Ruppalt, Laura B. Cleveland, Erin R.; Champlain, James G.; Bennett, Brian R.; Prokes, Sharka M.

    2014-12-15

    In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD) high-k dielectric stacks with device-quality p-type GaSb(001) epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H{sub 2}/Ar plasma treatment and subsequently removed to air. High-k HfO{sub 2} and Al{sub 2}O{sub 3}/HfO{sub 2} bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS) capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H{sub 2}-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H{sub 2}-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

  15. SLUDGE BATCH 7 ACCEPTANCE EVALUATION: RADIONUCLIDE CONCENTRATIONS IN TANK 51 SB7 QUALIFICATION SAMPLE PREPARED AT SRNL

    SciTech Connect (OSTI)

    Pareizs, J.; Hay, M.

    2011-02-22

    Presented in this report are radionuclide concentrations required as part of the program of qualifying Sludge Batch Seven (SB7) for processing in the Defense Waste Processing Facility (DWPF). The SB7 material is currently in Tank 51 being washed and prepared for transfer to Tank 40. The acceptance evaluation needs to be completed prior to the transfer of the material in Tank 51 to Tank 40. The sludge slurry in Tank 40 has already been qualified for DWPF and is currently being processed as SB6. The radionuclide concentrations were measured or estimated in the Tank 51 SB7 Qualification Sample prepared at Savannah River National Laboratory (SRNL). This sample was prepared from the three liter qualification sample of Tank 51 sludge slurry (HTF-51-10-125) received on September 18, 2010. The sample was delivered to SRNL where it was initially characterized in the Shielded Cells. With consultation from the Liquid Waste Organization, the qualification sample was then modified by several washes and decants, which included addition of Pu from H Canyon and sodium nitrite per the Tank Farm corrosion control program. This final slurry now has a composition expected to be similar to that of the slurry in Tank 51 after final preparations have been made for transfer of that slurry to Tank 40. Determining the radionuclide concentrations in this Tank 51 SB7 Qualification Sample is part of the work requested in Technical Task Request (TTR) No. HLW-DWPF-TTR-2010-0031. The radionuclides included in this report are needed for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria (TSR/WAC) Evaluation, and the DWPF Solid Waste Characterization Program (TTR Task I.2). Radionuclides required to meet the Waste Acceptance Product Specifications (TTR Task III.2.) will be measured at a later date after the slurry from Tank 51 has been transferred to Tank 40. Then a sample of the as-processed SB7 will be taken and transferred to SRNL for measurement of these radionuclides. The results presented in this report are those necessary for DWPF to assess if the Tank 51 SB7 sample prepared at SRNL meets the requirements for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria evaluation, and the DWPF Solid Waste Characterization Program. Concentrations are given for thirty-four radionuclides along with total alpha and beta activity. Values for total gamma and total gamma plus beta activities are also calculated.

  16. High thermoelectric performance of In, Yb, Ce multiple filled CoSb{sub 3} based skutterudite compounds

    SciTech Connect (OSTI)

    Ballikaya, Sedat; Department of Physics, University of Michigan, Ann Arbor, MI, 48109 ; Uzar, Neslihan; Yildirim, Saffettin; Salvador, James R.; Uher, Ctirad

    2012-09-15

    Filling voids with rare earth atoms is an effective way to lowering thermal conductivity which necessarily enhances thermoelectric properties of skutterudite compounds. Yb atom is one of the most effective species among the rare earth atoms for filling the voids in the skutterudite structure due to a large atomic mass, radius and it is intermediate valence state. In this work, we aim to find the best filling partners for Yb using different combinations of Ce and In as well as to optimize actual filling fraction in order to achieve high values of ZT. The traditional method of synthesis relying on melting-annealing and followed by spark plasma sintering was used to prepare all samples. The thermoelectric properties of four samples of Yb{sub 0.2}In{sub 0.2}Co{sub 4}Sb{sub 12}, Yb{sub 0.2}Ce{sub 0.15}Co{sub 4}Sb{sub 12}, Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12}, and Yb{sub 0.3}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} (nominal) were examined based on the Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient. Hall coefficient and Seebeck coefficient signs confirm that all samples are n-type skutterudite compounds. Carrier density increases with the increasing Yb+Ce content. A high power factor value of 57.7 {mu}W/K{sup 2}/cm for Yb{sub 0.2}Ce{sub 0.15}Co{sub 4}Sb{sub 12} and a lower thermal conductivity value of 2.82 W/m/K for Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} indicate that small quantities of Ce with In may be a good partner to Yb to reduce the thermal conductivity further and thus enhance the thermoelectric performance of skutterudites. The highest ZT value of 1.43 was achieved for Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} triple-filled skutterudite at 800 K. - Graphical abstract: Thermoelectric figure of merit of Yb{sub x}In{sub y}Ce{sub z}Co{sub 4}Sb{sub 12} (0{<=}x,y,z{<=}0.18 actual) compounds versus temperature. Highlights: Black-Right-Pointing-Pointer TE properties of Yb,In,Ce multiple-filled Yb{sub x}In{sub y}Ce{sub z}Co{sub 4}Sb{sub 12} skutterudites were investigated. Black-Right-Pointing-Pointer Thermal conductivity is strongly suppressed by multiple filling of Yb, Ce and In. Black-Right-Pointing-Pointer Small amounts of Ce and In with Yb are beneficial for the enhancement of TE performance. Black-Right-Pointing-Pointer The highest ZT=1.43 was achieved with Yb{sub 0.07}In{sub 0.094}Ce{sub 0.065}Co{sub 4}Sb{sub 11.92} at 800 K.

  17. Spectroscopy and capacitance measurements of tunneling resonances in an Sb-implanted point contact.

    SciTech Connect (OSTI)

    Wendt, Joel Robert; Rahman, Rajib; Ten Eyck, Gregory A.; Eng, Kevin; Carroll, Malcolm S.; Young, Ralph Watson; Lilly, Michael Patrick; Stalford, Harold Lenn; Bishop, Nathaniel; Bielejec, Edward Salvador

    2010-08-01

    We fabricated a split-gate defined point contact in a double gate enhancement mode Si-MOS device, and implanted Sb donor atoms using a self-aligned process. E-beam lithography in combination with a timed implant gives us excellent control over the placement of dopant atoms, and acts as a stepping stone to focused ion beam implantation of single donors. Our approach allows us considerable latitude in experimental design in-situ. We have identified two resonance conditions in the point contact conductance as a function of split gate voltage. Using tunneling spectroscopy, we probed their electronic structure as a function of temperature and magnetic field. We also determine the capacitive coupling between the resonant feature and several gates. Comparison between experimental values and extensive quasi-classical simulations constrain the location and energy of the resonant level. We discuss our results and how they may apply to resonant tunneling through a single donor.

  18. Optical Design for Extremely Large Telescope Adaptive Optics...

    Office of Scientific and Technical Information (OSTI)

    ThesisDissertation: Optical Design for Extremely Large Telescope Adaptive Optics Systems Citation Details In-Document Search Title: Optical Design for Extremely Large Telescope...

  19. Optical Design for Extremely Large Telescope Adaptive Optics...

    Office of Scientific and Technical Information (OSTI)

    ThesisDissertation: Optical Design for Extremely Large Telescope Adaptive Optics Systems Citation Details In-Document Search Title: Optical Design for Extremely Large Telescope ...

  20. Latching micro optical switch

    DOE Patents [OSTI]

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  1. Active optical zoom system

    DOE Patents [OSTI]

    Wick, David V.

    2005-12-20

    An active optical zoom system changes the magnification (or effective focal length) of an optical imaging system by utilizing two or more active optics in a conventional optical system. The system can create relatively large changes in system magnification with very small changes in the focal lengths of individual active elements by leveraging the optical power of the conventional optical elements (e.g., passive lenses and mirrors) surrounding the active optics. The active optics serve primarily as variable focal-length lenses or mirrors, although adding other aberrations enables increased utility. The active optics can either be LC SLMs, used in a transmissive optical zoom system, or DMs, used in a reflective optical zoom system. By appropriately designing the optical system, the variable focal-length lenses or mirrors can provide the flexibility necessary to change the overall system focal length (i.e., effective focal length), and therefore magnification, that is normally accomplished with mechanical motion in conventional zoom lenses. The active optics can provide additional flexibility by allowing magnification to occur anywhere within the FOV of the system, not just on-axis as in a conventional system.

  2. High bandwidth optical mount

    DOE Patents [OSTI]

    Bender, D.A.; Kuklo, T.

    1994-11-08

    An optical mount, which directs a laser beam to a point by controlling the position of a light-transmitting optic, is stiffened so that a lowest resonant frequency of the mount is approximately one kilohertz. The optical mount, which is cylindrically-shaped, positions the optic by individually moving a plurality of carriages which are positioned longitudinally within a sidewall of the mount. The optical mount is stiffened by allowing each carriage, which is attached to the optic, to move only in a direction which is substantially parallel to a center axis of the optic. The carriage is limited to an axial movement by flexures or linear bearings which connect the carriage to the mount. The carriage is moved by a piezoelectric transducer. By limiting the carriage to axial movement, the optic can be kinematically clamped to a carriage. 5 figs.

  3. High bandwidth optical mount

    DOE Patents [OSTI]

    Bender, Donald A. (Dublin, CA); Kuklo, Thomas (Oakdale, CA)

    1994-01-01

    An optical mount, which directs a laser beam to a point by controlling the position of a light-transmitting optic, is stiffened so that a lowest resonant frequency of the mount is approximately one kilohertz. The optical mount, which is cylindrically-shaped, positions the optic by individually moving a plurality of carriages which are positioned longitudinally within a sidewall of the mount. The optical mount is stiffened by allowing each carriage, which is attached to the optic, to move only in a direction which is substantially parallel to a center axis of the optic. The carriage is limited to an axial movement by flexures or linear bearings which connect the carriage to the mount. The carriage is moved by a piezoelectric transducer. By limiting the carriage to axial movement, the optic can be kinematically clamped to a carriage.

  4. Fiber optic micro accelerometer

    DOE Patents [OSTI]

    Swierkowski, Steve P.

    2005-07-26

    An accelerometer includes a wafer, a proof mass integrated into the wafer, at least one spring member connected to the proof mass, and an optical fiber. A Fabry-Perot cavity is formed by a partially reflective surface on the proof mass and a partially reflective surface on the end of the optical fiber. The two partially reflective surfaces are used to detect movement of the proof mass through the optical fiber, using an optical detection system.

  5. Reflective optical imaging system

    DOE Patents [OSTI]

    Shafer, David R. (Fairfield, CT)

    2000-01-01

    An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four reflective elements for projecting a mask image onto a substrate. The four optical elements are characterized in order from object to image as convex, concave, convex and concave mirrors. The optical system is particularly suited for step and scan lithography methods. The invention increases the slit dimensions associated with ringfield scanning optics, improves wafer throughput and allows higher semiconductor device density.

  6. Optical voltage reference

    DOE Patents [OSTI]

    Rankin, Richard (Ammon, ID); Kotter, Dale (Bingham County, ID)

    1994-01-01

    An optical voltage reference for providing an alternative to a battery source. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function.

  7. Optical voltage reference

    DOE Patents [OSTI]

    Rankin, R.; Kotter, D.

    1994-04-26

    An optical voltage reference for providing an alternative to a battery source is described. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function. 2 figures.

  8. The effects of surface bond relaxation on electronic structure of Sb{sub 2}Te{sub 3} nano-films by first-principles calculation

    SciTech Connect (OSTI)

    Li, C. Zhao, Y. F.; Fu, C. X.; Gong, Y. Y.; Chi, B. Q.; Sun, C. Q.

    2014-10-15

    The effects of vertical compressive stress on Sb{sub 2}Te{sub 3} nano-films have been investigated by the first principles calculation, including stability, electronic structure, crystal structure, and bond order. It is found that the band gap of nano-film is sensitive to the stress in Sb{sub 2}Te{sub 3} nano-film and the critical thickness increases under compressive stress. The band gap and band order of Sb{sub 2}Te{sub 3} film has been affected collectively by the surface and internal crystal structures, the contraction ratio between surface bond length of nano-film and the corresponding bond length of bulk decides the band order of Sb{sub 2}Te{sub 3} film.

  9. Lattice constant grading in the Al.sub.y Ga.sub.1-y As.sub.1-x Sb.sub.x alloy system

    DOE Patents [OSTI]

    Moon, Ronald L. (Palo Alto, CA)

    1980-01-01

    Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5 .mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photolvoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of growing layer.

  10. Lattice constant grading in the Al.sub.y Ca.sub.1-y As.sub.1-x Sb.sub.x alloy system

    DOE Patents [OSTI]

    Moon, Ronald L. (Palo Alto, CA)

    1981-01-01

    Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5.mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photovoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of the growing layer.

  11. Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

    SciTech Connect (OSTI)

    Pandey, Sushil Kumar; Kumar Pandey, Saurabh; Awasthi, Vishnu; Mukherjee, Shaibal; Gupta, M.; Deshpande, U. P.

    2013-08-12

    Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O{sub 2}/(O{sub 2} + N{sub 2})% from 0% (N{sub 2}) to 100% (O{sub 2}). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O{sub 2} ambient exhibited higher hole concentration as compared with films annealed in vacuum or N{sub 2} ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb{sup 5+} states were more preferable in comparison to Sb{sup 3+} states for acceptor-like Sb{sub Zn}-2V{sub Zn} complex formation in SZO films.

  12. Nikon PTIPHOT-88 Optical Microscope

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    OPTIPHOT-88 Optical Microscope micro1.jpg (69171 bytes)

  13. High temperature thermoelectric properties of the solid-solution zintl phase Eu??Cd6-xZnxSb??

    SciTech Connect (OSTI)

    Kazem, Nasrin; Hurtado, Antonio; Sui, Fan; Ohno, Saneyuki; Zevalkink, Alexandra; Snyder, Jeffrey G.; Kauzlarich, Susan M.

    2015-08-24

    Solid-solution Zintl compounds with the formulaEu??Cd6-xZnxSb?? have been synthesized from the elements as single crystals using a tin flux according to the stoichiometry Eu:Cd:Zn:Sb:Sn of 11:6xp:xp:12:30 with xp = 0, 1, 2, 3, 4, 5, and 6, where xp is the preparative amount of Zn employed in the reaction. The crystal structures and the compositions were established by single-crystal as well as powder X-ray diffraction and wavelength-dispersive X-ray analysis measurements. The title solid-solution Zintl compounds crystallize isostructurally in the centrosymmetric monoclinic space group C 2/m (No. 12, Z = 2) as the Sr??Cd?Sb?? structure type (Pearson symbol mC58). There is a miscibility gap at 3 ? xp ? 4 where the major product crystallizes in a disordered structure related to the Ca?Mn?Bi? structure type; otherwise, for all other compositions, the Sr??Cd?Sb?? structure is the majority phase. Eu??Cd?Sb?? shows lower lattice thermal conductivity relative to Eu??Zn?Sb?? consistent with its higher mean atomic weight, and as anticipated, the solid-solution samples of Eu??Cd6xZnxSb?? have effectively reduced lattice thermal conductivities relative to the end member compounds. Eu?????(1)Cd????(2)Zn????(2)Sb?????(1) exhibits the highest zT value of >0.5 at around 800 K which is twice as large as the end member compounds.

  14. Atomistic modeling and HAADF investigations of misfit and threading dislocations in GaSb/GaAs hetero-structures for applications in high electron mobility transistors

    SciTech Connect (OSTI)

    Ruterana, Pierre Wang, Yi Chen, Jun Chauvat, Marie-Pierre; El Kazzi, S.; Deplanque, L.; Wallart, X.

    2014-10-06

    A detailed investigation on the misfit and threading dislocations at GaSb/GaAs interface has been carried out using molecular dynamics simulation and quantitative electron microscopy techniques. The sources and propagation of misfit dislocations have been elucidated. The nature and formation mechanisms of the misfit dislocations as well as the role of Sb on the stability of the Lomer configuration have been explained.

  15. Omnidirectional fiber optic tiltmeter

    DOE Patents [OSTI]

    Benjamin, B.C.; Miller, H.M.

    1983-06-30

    A tiltmeter is provided which is useful in detecting very small movements such as earth tides. The device comprises a single optical fiber, and an associated weight affixed thereto, suspended from a support to form a pendulum. A light source, e.g., a light emitting diode, mounted on the support transmits light through the optical fiber to a group of further optical fibers located adjacent to but spaced from the free end of the single optical fiber so that displacement of the single optical fiber with respect to the group will result in a change in the amount of light received by the individual optical fibers of the group. Photodetectors individually connectd to the fibers produce corresponding electrical outputs which are differentially compared and processed to produce a resultant continuous analog output representative of the amount and direction of displacement of the single optical fiber.

  16. Fiber optic vibration sensor

    DOE Patents [OSTI]

    Dooley, Joseph B. (Harriman, TN); Muhs, Jeffrey D. (Lenoir City, TN); Tobin, Kenneth W. (Harriman, TN)

    1995-01-01

    A fiber optic vibration sensor utilizes two single mode optical fibers supported by a housing with one optical fiber fixedly secured to the housing and providing a reference signal and the other optical fiber having a free span length subject to vibrational displacement thereof with respect to the housing and the first optical fiber for providing a signal indicative of a measurement of any perturbation of the sensor. Damping or tailoring of the sensor to be responsive to selected levels of perturbation is provided by altering the diameter of optical fibers or by immersing at least a portion of the free span length of the vibration sensing optical fiber into a liquid of a selected viscosity.

  17. Fiber optic vibration sensor

    DOE Patents [OSTI]

    Dooley, J.B.; Muhs, J.D.; Tobin, K.W.

    1995-01-10

    A fiber optic vibration sensor utilizes two single mode optical fibers supported by a housing with one optical fiber fixedly secured to the housing and providing a reference signal and the other optical fiber having a free span length subject to vibrational displacement thereof with respect to the housing and the first optical fiber for providing a signal indicative of a measurement of any perturbation of the sensor. Damping or tailoring of the sensor to be responsive to selected levels of perturbation is provided by altering the diameter of optical fibers or by immersing at least a portion of the free span length of the vibration sensing optical fiber into a liquid of a selected viscosity. 2 figures.

  18. Effect of antimony on the deep-level traps in GaInNAsSb thin films

    SciTech Connect (OSTI)

    Islam, Muhammad Monirul Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka; Sakurai, Takeaki; Akimoto, Katsuhiro

    2014-09-15

    Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41?eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

  19. Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Olson, Benjamin Varberg; Kim, Jin K.; Kadlec, Emil Andrew; Shaner, Eric A.; Haugan, Heather J.; Brown, Gail J.

    2015-09-28

    Minority carrier lifetimes in very long wavelength infrared (VLWIR) InAs/GaInSb superlattices (SLs) are reported using time-resolved microwave reflectance measurements. A strain-balanced ternary SL absorber layer of 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb, corresponding to a bandgap of ~50 meV, is found to have a minority carrier lifetime of 140 ± 20 ns at ~18 K. This lifetime is extraordinarily long, when compared to lifetime values previously reported for other VLWIR SL detector materials. As a result, this enhancement is attributed to the strain-engineered ternary design, which offers a variety of epitaxial advantages and ultimately leads to a reduction of defect-mediated recombinationmore » centers.« less

  20. Phase transitions in double perovskite Sr{sub 2}ScSbO{sub 6}: An Ab-initio study

    SciTech Connect (OSTI)

    Ray, Rajyavardhan; Kumar, Uday; Sinha, T. P.

    2014-04-24

    First Principles study of the electronic properties of recently synthesized double perovskite Sr{sub 2}ScSbO{sub 6} have been performed using density functional theory. With increasing temperature, the Sr compound undergoes three structural phase transitions at 400K, 550K and 650K approximately, leading to the following sequence of phases: P21/n ? I2/m ? I4/m ? Fm-3m. Starting from the monoclinic phase P21/n at room temperature, resulting from the Sc/Sb ordering, the electronic structure for the tetragonal I4/m at 613K and cubic Fm-3m for T?660K has been studied in terms of the density of states and band-structure. Presence of large band gap, both direct and indirect, has been reported and analyzed.

  1. Methods for chemical recovery of non-carrier-added radioactive tin from irradiated intermetallic Ti-Sb targets

    DOE Patents [OSTI]

    Lapshina, Elena V.; Zhuikov, Boris L.; Srivastava, Suresh C.; Ermolaev, Stanislav V.; Togaeva, Natalia R.

    2012-01-17

    The invention provides a method of chemical recovery of no-carrier-added radioactive tin (NCA radiotin) from intermetallide TiSb irradiated with accelerated charged particles. An irradiated sample of TiSb can be dissolved in acidic solutions. Antimony can be removed from the solution by extraction with dibutyl ether. Titanium in the form of peroxide can be separated from tin using chromatography on strong anion-exchange resin. In another embodiment NCA radiotin can be separated from iodide solution containing titanium by extraction with benzene, toluene or chloroform. NCA radiotin can be finally purified from the remaining antimony and other impurities using chromatography on silica gel. NCA tin-117m can be obtained from this process. NCA tin-117m can be used for labeling organic compounds and biological objects to be applied in medicine for imaging and therapy of various diseases.

  2. Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices

    SciTech Connect (OSTI)

    Olson, Benjamin Varberg; Kim, Jin K.; Kadlec, Emil Andrew; Shaner, Eric A.; Haugan, Heather J.; Brown, Gail J.

    2015-09-28

    Minority carrier lifetimes in very long wavelength infrared (VLWIR) InAs/GaInSb superlattices (SLs) are reported using time-resolved microwave reflectance measurements. A strain-balanced ternary SL absorber layer of 47.0 InAs/21.5 Ga0.75In0.25Sb, corresponding to a bandgap of ~50 meV, is found to have a minority carrier lifetime of 140 20 ns at ~18 K. This lifetime is extraordinarily long, when compared to lifetime values previously reported for other VLWIR SL detector materials. As a result, this enhancement is attributed to the strain-engineered ternary design, which offers a variety of epitaxial advantages and ultimately leads to a reduction of defect-mediated recombination centers.

  3. CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang; Liu Xinyu; Furdyna, Jacek K.; Smith, David J.

    2012-03-19

    CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

  4. Electron interactions and Dirac fermions in graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices

    SciTech Connect (OSTI)

    Sa, Baisheng; Sun, Zhimei

    2014-06-21

    Graphene based superlattices have been attracted worldwide interest due to the combined properties of the graphene Dirac cone feature and all kinds of advanced functional materials. In this work, we proposed a novel series of graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices based on the density functional theory calculations. We demonstrated the stability in terms of energy and lattice dynamics for such kind of artificial materials. The analysis of the electronic structures unravels the gap opening nature at Dirac cone of the insert graphene layer. The Dirac fermions in the graphene layers are strongly affected by the electron spin orbital coupling in the Ge{sub 2}Sb{sub 2}Te{sub 5} layers. The present results show the possible application in phase-change data storage of such kind of superlattice materials, where the Ge{sub 2}Sb{sub 2}Te{sub 5} layers exhibit as the phase-change data storage media and the graphene layer works as the electrode, probe, and heat conductor.

  5. Synthesis of nanocrystalline thin films of gold on the surface of GaSb by swift heavy ion

    SciTech Connect (OSTI)

    Jadhav, Vidya; Dubey, S. K.; Yadav, A. D.; Singh, A.

    2013-02-05

    Thin films of gold ({approx}100 nm thick) were deposited on p-type GaSb substrates. These samples were irradiated with 100 MeV Fe{sup 7+}ions for the fluence of 1 Multiplication-Sign 10{sup 13} and 1 Multiplication-Sign 10{sup 14} ions cm{sup -2}. After irradiation, samples were characterized using AFM, UV-VIS -NIR, X-Ray Diffraction techniques. AFM studies showed the presence of clusters on the surface of GaSb. R.M.S. roughness of the sample was found to increase w.r.t ion fluence. Absorption coefficient obtained from the Ultra violet - Visible NIR (UV-VIS -NIR) spectra of the samples irradiated with various fluences compared with non irradiated GaSb. The annealing experiment showed a significant improvement in the absorption coefficient after rapid thermal annealing at temperature of 400 Degree-Sign C. X-Ray Diffraction study reveals different orientations of Au film.

  6. Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy

    SciTech Connect (OSTI)

    Hosseini Vajargah, S.; Woo, S. Y.; Botton, G. A.; Ghanad-Tavakoli, S.; Kleiman, R. N.; Preston, J. S.

    2012-11-01

    The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs' faceting.

  7. Optical Design for Extremely Large Telescope Adaptive Optics Systems

    Office of Scientific and Technical Information (OSTI)

    (Thesis/Dissertation) | SciTech Connect Thesis/Dissertation: Optical Design for Extremely Large Telescope Adaptive Optics Systems Citation Details In-Document Search Title: Optical Design for Extremely Large Telescope Adaptive Optics Systems Designing an adaptive optics (AO) system for extremely large telescopes (ELT's) will present new optical engineering challenges. Several of these challenges are addressed in this work, including first-order design of multi-conjugate adaptive optics

  8. Influence of interstitial Mn on magnetism in room-temperature ferromagnet Mn(1+delta)Sb

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Taylor, Alice E; Berlijn, Tom; Hahn, Steven E; May, Andrew F; Williams, Travis J; Poudel, Lekhanath N; Calder, Stuart A; Fishman, Randy Scott; Stone, Matthew B; Aczel, Adam A; et al

    2015-01-01

    We report elastic and inelastic neutron scattering measurements of the high-TC ferromagnet Mn(1+delta)Sb. Measurements were performed on a large, TC = 434 K, single crystal with interstitial Mn content of delta=0.13. The neutron diffraction results reveal that the interstitial Mn has a magnetic moment, and that it is aligned antiparallel to the main Mn moment. We perform density functional theory calculations including the interstitial Mn, and find the interstitial to be magnetic in agreement with the diffraction data. The inelastic neutron scattering measurements reveal two features in the magnetic dynamics: i) a spin-wave-like dispersion emanating from ferromagnetic Bragg positions (Hmore » K 2n), and ii) a broad, non-dispersive signal centered at forbidden Bragg positions (H K 2n+1). The inelastic spectrum cannot be modeled by simple linear spin-wave theory calculations, and appears to be significantly altered by the presence of the interstitial Mn ions. The results show that the influence of the int« less

  9. Influence of interstitial Mn on magnetism in room-temperature ferromagnet Mn(1+delta)Sb

    SciTech Connect (OSTI)

    Taylor, Alice E [ORNL; Berlijn, Tom [ORNL; Hahn, Steven E [ORNL; May, Andrew F [ORNL; Williams, Travis J [ORNL; Poudel, Lekhanath N [ORNL; Calder, Stuart A [ORNL; Fishman, Randy Scott [ORNL; Stone, Matthew B [ORNL; Aczel, Adam A [ORNL; Cao, Huibo [ORNL; Lumsden, Mark D [ORNL; Christianson, Andrew D [ORNL

    2015-01-01

    We report elastic and inelastic neutron scattering measurements of the high-TC ferromagnet Mn(1+delta)Sb. Measurements were performed on a large, TC = 434 K, single crystal with interstitial Mn content of delta=0.13. The neutron diffraction results reveal that the interstitial Mn has a magnetic moment, and that it is aligned antiparallel to the main Mn moment. We perform density functional theory calculations including the interstitial Mn, and find the interstitial to be magnetic in agreement with the diffraction data. The inelastic neutron scattering measurements reveal two features in the magnetic dynamics: i) a spin-wave-like dispersion emanating from ferromagnetic Bragg positions (H K 2n), and ii) a broad, non-dispersive signal centered at forbidden Bragg positions (H K 2n+1). The inelastic spectrum cannot be modeled by simple linear spin-wave theory calculations, and appears to be significantly altered by the presence of the interstitial Mn ions. The results show that the influence of the int

  10. The magnetic structure of EuCu2Sb2

    SciTech Connect (OSTI)

    Ryan, D. H.; Cadogan, J. M.; Anand, V. K.; Johnston, D. C.; Flacau, R.

    2015-05-06

    Antiferromagnetic ordering of EuCu2Sb2 which forms in the tetragonal CaBe2Ge2-type structure (space group P4/nmm #129) has been studied using neutron powder diffraction and 151Eu Mssbauer spectroscopy. The room temperature 151Eu isomer shift of 12.8(1) mm/s shows the Eu to be divalent, while the 151Eu hyperfine magnetic field (Bhf) reaches 28.7(2) T at 2.1 K, indicating a full Eu2+ magnetic moment. Bhf(T) follows a smooth $S=\\frac{7}{2}$ Brillouin function and yields an ordering temperature of 5.1(1) K. Refinement of the neutron diffraction data reveals a collinear A-type antiferromagnetic arrangement with the Eu moments perpendicular to the tetragonal c-axis. As a result, the refined Eu magnetic moment at 0.4 K is 7.08(15) ?B which is the full free-ion moment expected for the Eu2+ ion with $S=\\frac{7}{2}$ and a spectroscopic splitting factor of g = 2.

  11. Activity of the kinesin spindle protein inhibitor ispinesib (SB-715992) in models of breast cancer

    SciTech Connect (OSTI)

    Purcell, James W; Davis, Jefferson; Reddy, Mamatha; Martin, Shamra; Samayoa, Kimberly; Vo, Hung; Thomsen, Karen; Bean, Peter; Kuo, Wen Lin; Ziyad, Safiyyah; Billig, Jessica; Feiler, Heidi S; Gray, Joe W; Wood, Kenneth W; Cases, Sylvaine

    2009-06-10

    Ispinesib (SB-715992) is a potent inhibitor of kinesin spindle protein (KSP), a kinesin motor protein essential for the formation of a bipolar mitotic spindle and cell cycle progression through mitosis. Clinical studies of ispinesib have demonstrated a 9% response rate in patients with locally advanced or metastatic breast cancer, and a favorable safety profile without significant neurotoxicities, gastrointestinal toxicities or hair loss. To better understand the potential of ispinesib in the treatment of breast cancer we explored the activity of ispinesib alone and in combination several therapies approved for the treatment of breast cancer. We measured the ispinesib sensitivity and pharmacodynamic response of breast cancer cell lines representative of various subtypes in vitro and as xenografts in vivo, and tested the ability of ispinesib to enhance the anti-tumor activity of approved therapies. In vitro, ispinesib displayed broad anti-proliferative activity against a panel of 53 breast cell-lines. In vivo, ispinesib produced regressions in each of five breast cancer models, and tumor free survivors in three of these models. The effects of ispinesib treatment on pharmacodynamic markers of mitosis and apoptosis were examined in vitro and in vivo, revealing a greater increase in both mitotic and apoptotic markers in the MDA-MB-468 model than in the less sensitive BT-474 model. In vivo, ispinesib enhanced the anti-tumor activity of trastuzumab, lapatinib, doxorubicin, and capecitabine, and exhibited activity comparable to paclitaxel and ixabepilone. These findings support further clinical exploration of KSP inhibitors for the treatment of breast cancer.

  12. Thermochemical and kinetic aspects of the sulfurization of Cu-Sb and Cu-Bi thin films

    SciTech Connect (OSTI)

    Colombara, Diego; Peter, Laurence M.; Rogers, Keith D.; Hutchings, Kyle

    2012-02-15

    CuSbS{sub 2} and Cu{sub 3}BiS{sub 3} are being investigated as part of a search for new absorber materials for photovoltaic devices. Thin films of these chalcogenides were produced by conversion of stacked and co-electroplated metal precursor layers in the presence of elemental sulfur vapour. Ex-situ XRD and SEM/EDS analyses of the processed samples were employed to study the reaction sequence with the aim of achieving compact layer morphologies. A new 'Time-Temperature-Reaction' (TTR) diagram and modified Pilling-Bedworth coefficients have been introduced for the description and interpretation of the reaction kinetics. For equal processing times, the minimum temperature required for CuSbS{sub 2} to appear is substantially lower than for Cu{sub 3}BiS{sub 3}, suggesting that interdiffusion across the interfaces between the binary sulfides is a key step in the formation of the ternary compounds. The effects of the heating rate and sulfur partial pressure on the phase evolution as well as the potential losses of Sb and Bi during the processes have been investigated experimentally and the results related to the equilibrium pressure diagrams obtained via thermochemical computation. - Graphical Abstract: Example of 3D plot showing the equilibrium pressure surfaces of species potentially escaping from chalcogenide films as a function of temperature and sulfur partial pressure. Bi{sub (g)}, Bi{sub 2(g)}, and BiS{sub (g)} are the gaseous species in equilibrium with solid Bi{sub 2}S{sub 3(s)} considered in this specific example. The pressure threshold plane corresponds to the pressure limit above which the elemental losses from 1 {mu}m thick films exceeds 10% of the original content per cm{sup 2} area of film and dm{sup 3} capacity of sulfurization furnace under static atmosphere conditions. The sulfurization temperature/sulfur partial pressure boundaries required to minimise the elemental losses below a given value can be easily read from the 2D projection of the intersection curves into the T-p{sub S2} plane. Highlights: Black-Right-Pointing-Triangle Sulfurization of Sb-Cu and Bi-Cu metal precursors for thin film PV applications. Black-Right-Pointing-Triangle Kinetics shows the rate determining step to be the interdiffusion of binary sulfides. Black-Right-Pointing-Triangle Phase evolution is consistent with Pilling-Bedworth coefficients of Cu, Sb and Bi. Black-Right-Pointing-Triangle Elemental losses can be minimised via the use of equilibrium pressure diagrams.

  13. Multichannel optical sensing device

    DOE Patents [OSTI]

    Selkowitz, S.E.

    1985-08-16

    A multichannel optical sensing device is disclosed, for measuring the outdoor sky luminance or illuminance or the luminance or illuminance distribution in a room, comprising a plurality of light receptors, an optical shutter matrix including a plurality of liquid crystal optical shutter elements operable by electrical control signals between light transmitting and light stopping conditions, fiber optical elements connected between the receptors and the shutter elements, a microprocessor based programmable control unit for selectively supplying control signals to the optical shutter elements in a programmable sequence, a photodetector including an optical integrating spherical chamber having an input port for receiving the light from the shutter matrix and at least one detector element in the spherical chamber for producing output signals corresponding to the light, and output units for utilizing the output signals including a storage unit having a control connection to the microprocessor based programmable control unit for storing the output signals under the sequence control of the programmable control unit.

  14. Multichannel optical sensing device

    DOE Patents [OSTI]

    Selkowitz, Stephen E. (Piedmont, CA)

    1990-01-01

    A multichannel optical sensing device is disclosed, for measuring the outr sky luminance or illuminance or the luminance or illuminance distribution in a room, comprising a plurality of light receptors, an optical shutter matrix including a plurality of liquid crystal optical shutter elements operable by electrical control signals between light transmitting and light stopping conditions, fiber optic elements connected between the receptors and the shutter elements, a microprocessor based programmable control unit for selectively supplying control signals to the optical shutter elements in a programmable sequence, a photodetector including an optical integrating spherical chamber having an input port for receiving the light from the shutter matrix and at least one detector element in the spherical chamber for producing output signals corresponding to the light, and output units for utilizing the output signals including a storage unit having a control connection to the microprocessor based programmable control unit for storing the output signals under the sequence control of the programmable control unit.

  15. Atmospheric optical calibration system

    DOE Patents [OSTI]

    Hulstrom, Roland L. (Bloomfield, CO); Cannon, Theodore W. (Golden, CO)

    1988-01-01

    An atmospheric optical calibration system is provided to compare actual atmospheric optical conditions to standard atmospheric optical conditions on the basis of aerosol optical depth, relative air mass, and diffuse horizontal skylight to global horizontal photon flux ratio. An indicator can show the extent to which the actual conditions vary from standard conditions. Aerosol scattering and absorption properties, diffuse horizontal skylight to global horizontal photon flux ratio, and precipitable water vapor determined on a real-time basis for optical and pressure measurements are also used to generate a computer spectral model and for correcting actual performance response of a photovoltaic device to standard atmospheric optical condition response on a real-time basis as the device is being tested in actual outdoor conditions.

  16. Transpiration purged optical probe

    DOE Patents [OSTI]

    2004-01-06

    An optical apparatus for clearly viewing the interior of a containment vessel by applying a transpiration fluid to a volume directly in front of the external surface of the optical element of the optical apparatus. The fluid is provided by an external source and transported by means of an annular tube to a capped end region where the inner tube is perforated. The perforation allows the fluid to stream axially towards the center of the inner tube and then axially away from an optical element which is positioned in the inner tube just prior to the porous sleeve. This arrangement draws any contaminants away from the optical element keeping it free of contaminants. In one of several embodiments, the optical element can be a lens, a viewing port or a laser, and the external source can provide a transpiration fluid having either steady properties or time varying properties.

  17. Atmospheric optical calibration system

    DOE Patents [OSTI]

    Hulstrom, R.L.; Cannon, T.W.

    1988-10-25

    An atmospheric optical calibration system is provided to compare actual atmospheric optical conditions to standard atmospheric optical conditions on the basis of aerosol optical depth, relative air mass, and diffuse horizontal skylight to global horizontal photon flux ratio. An indicator can show the extent to which the actual conditions vary from standard conditions. Aerosol scattering and absorption properties, diffuse horizontal skylight to global horizontal photon flux ratio, and precipitable water vapor determined on a real-time basis for optical and pressure measurements are also used to generate a computer spectral model and for correcting actual performance response of a photovoltaic device to standard atmospheric optical condition response on a real-time basis as the device is being tested in actual outdoor conditions. 7 figs.

  18. Optical atomic magnetometer

    DOE Patents [OSTI]

    Budker, Dmitry; Higbie, James; Corsini, Eric P.

    2013-11-19

    An optical atomic magnetometers is provided operating on the principles of nonlinear magneto-optical rotation. An atomic vapor is optically pumped using linearly polarized modulated light. The vapor is then probed using a non-modulated linearly polarized light beam. The resulting modulation in polarization angle of the probe light is detected and used in a feedback loop to induce self-oscillation at the resonant frequency.

  19. Compound semiconductor optical waveguide switch

    DOE Patents [OSTI]

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  20. SLUDGE BATCH 5 ACCEPTANCE EVALUATION RADIONUCLIDE CONCENTRATIONS IN TANK 51 SB5 QUALIFICATION SAMPLE PREPARED AT SRNL

    SciTech Connect (OSTI)

    Bannochie, C; Ned Bibler, N; David Diprete, D

    2008-07-28

    Presented in this report are radionuclide concentrations required as part of the program of qualifying Sludge Batch Five (SB5) for processing in the Defense Waste Processing Facility (DWPF). Part of this SB5 material is currently in Tank 51 being washed and prepared for transfer to Tank 40. The acceptance evaluation needs to be completed prior to the transfer of the material in Tank 51 to Tank 40 to complete the formation of SB5. The sludge slurry in Tank 40 has already been qualified for DWPF and is currently being processed as SB4. The radionuclide concentrations were measured or estimated in the Tank 51 SB5 Qualification Sample prepared at Savannah River National Laboratory (SRNL). This sample was prepared from the three liter sample of Tank 51 sludge slurry taken on March 21, 2008. The sample was delivered to SRNL where it was initially characterized in the Shielded Cells. Under direction of the Liquid Waste Organization it was then modified by five washes, six decants, an addition of Pu/Be from Canyon Tank 16.4, and an addition of NaNO2. This final slurry now has a composition expected to be similar to that of the slurry in Tank 51 after final preparations have been made for transfer of that slurry to Ta Determining the radionuclide concentrations in this Tank 51 SB5 Qualification Sample is part of the work requested in Technical Task Request (TTR) No. HLW-DWPF-TTR-2008-0010. The work with this qualification sample is covered by a Task Technical and Quality Assurance Plan and an Analytical Study Plan. The radionuclides included in this report are needed for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria (TSR/WAC) Evaluation, and the DWPF Solid Waste Characterization Program (TTR Task 2). Radionuclides required to meet the Waste Acceptance Product Specifications (TTR Task 5) will be measured at a later date after the slurry from Tank 51 has been transferred to Tank 40. Then a sample of the as-processed SB5 will be taken and transferred to SRNL for measurement of these radionuclides. Data presented in this report represents the measured or estimated radionuclide concentrations obtained from several standard and special analytical methods performed by Analytical Development (AD) personnel within SRNL. The method for I-129 measurement in sludge is described in detail. Most of these methods were performed on solutions resulting from the dissolutions of the slurry samples. Concentrations are given for twenty-nine radionuclides along with total alpha and beta activity. Values for total gamma and total gamma plus beta activities are also calculated. Results also indicate that 98% of the Tc-99 and 92% of the I-129 that could have been in this sludge batch have been removed by chemical processing steps in the SRS Canyons or Tank Farm.

  1. SLUDGE BATCH 6 ACCEPTANCE EVALUATION: RADIONUCLIDE CONCENTRATIONS IN TANK 51 SB6 QUALIFICATION SAMPLE PREPARED AT SRNL

    SciTech Connect (OSTI)

    Bannochie, C.; Bibler, N.; Diprete, D.

    2010-05-21

    Presented in this report are radionuclide concentrations required as part of the program of qualifying Sludge Batch Six (SB6) for processing in the Defense Waste Processing Facility (DWPF). The SB6 material is currently in Tank 51 being washed and prepared for transfer to Tank 40. The acceptance evaluation needs to be completed prior to the transfer of the material in Tank 51 to Tank 40. The sludge slurry in Tank 40 has already been qualified for DWPF and is currently being processed as SB5. The radionuclide concentrations were measured or estimated in the Tank 51 SB6 Qualification Sample prepared at Savannah River National Laboratory (SRNL). This sample was prepared from the three liter sample of Tank 51 sludge slurry (HTF-51-09-110) taken on October 8, 2009. The sample was delivered to SRNL where it was initially characterized in the Shielded Cells. Under the direction of the Liquid Waste Organization it was then modified by eight washes, nine decants, an addition of Pu from Canyon Tank 16.3, and an addition of NaNO{sub 2}. This final slurry now has a composition expected to be similar to that of the slurry in Tank 51 after final preparations have been made for transfer of that slurry to Tank 40. Determining the radionuclide concentrations in this Tank 51 SB6 Qualification Sample is part of the work requested in Technical Task Request (TTR) No. HLW-DWPF-TTR-2009-0014. The work with this qualification sample is covered by a Task Technical and Quality Assurance Plan and an Analytical Study Plan. The radionuclides included in this report are needed for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria (TSR/WAC) Evaluation, and the DWPF Solid Waste Characterization Program (TTR Task I.2). Radionuclides required to meet the Waste Acceptance Product Specifications (TTR Task II.2.) will be measured at a later date after the slurry from Tank 51 has been transferred to Tank 40. Then a sample of the as-processed SB6 will be taken and transferred to SRNL for measurement of these radionuclides. The results presented in this report are those necessary for DWPF to assess if the Tank 51 SB6 sample prepared at SRNL meets the requirements for the DWPF Radiological Program Evaluation, the DWPF Waste Acceptance Criteria evaluation, and the DWPF Solid Waste Characterization Program. The sample is the same as that on which the chemical composition was reported. Concentrations are given for thirty-four radionuclides along with total alpha and beta activity. Values for total gamma and total gamma plus beta activities are also calculated. Results also indicate that 99% of the Tc-99 and at least 90% of the I-129 that could have been in this sludge batch have been removed by chemical processing steps in the SRS Canyons or Tank Farm.

  2. Prismatic optical display

    DOE Patents [OSTI]

    Veligdan, James T.; DeSanto, Leonard; Brewster, Calvin

    2004-06-29

    A spatially modulated light beam is projected, reflected, and redirected through a prismatic optical panel to form a video image for direct viewing thereon.

  3. Optical contact micrometer

    DOE Patents [OSTI]

    Jacobson, Steven D.

    2014-08-19

    Certain examples provide optical contact micrometers and methods of use. An example optical contact micrometer includes a pair of opposable lenses to receive an object and immobilize the object in a position. The example optical contact micrometer includes a pair of opposable mirrors positioned with respect to the pair of lenses to facilitate viewing of the object through the lenses. The example optical contact micrometer includes a microscope to facilitate viewing of the object through the lenses via the mirrors; and an interferometer to obtain one or more measurements of the object.

  4. Optical amplifiers and lasers

    DOE Patents [OSTI]

    Klimov, Victor I.; Mikhailovski, Alexandre; Hollingsworth, Jennifer A.; Leatherdale, Catherine A.; Bawendi, Moungi G.

    2004-11-16

    An optical amplifier and laser having both broad band and wide range specific band capability can be based on semiconductor nanocrystal solids.

  5. Optical limiting materials

    DOE Patents [OSTI]

    McBranch, Duncan W. (Santa Fe, NM); Mattes, Benjamin R. (Santa Fe, NM); Koskelo, Aaron C. (Los Alamos, NM); Heeger, Alan J. (Santa Barbara, CA); Robinson, Jeanne M. (Los Alamos, NM); Smilowitz, Laura B. (Los Alamos, NM); Klimov, Victor I. (Los Alamos, NM); Cha, Myoungsik (Goleta, CA); Sariciftci, N. Serdar (Santa Barbara, CA); Hummelen, Jan C. (Groningen, NL)

    1998-01-01

    Optical limiting materials. Methanofullerenes, fulleroids and/or other fullerenes chemically altered for enhanced solubility, in liquid solution, and in solid blends with transparent glass (SiO.sub.2) gels or polymers, or semiconducting (conjugated) polymers, are shown to be useful as optical limiters (optical surge protectors). The nonlinear absorption is tunable such that the energy transmitted through such blends saturates at high input energy per pulse over a wide range of wavelengths from 400-1100 nm by selecting the host material for its absorption wavelength and ability to transfer the absorbed energy into the optical limiting composition dissolved therein. This phenomenon should be generalizable to other compositions than substituted fullerenes.

  6. Telescope Adaptive Optics Code

    Energy Science and Technology Software Center (OSTI)

    2005-07-28

    The Telescope AO Code has general adaptive optics capabilities plus specialized models for three telescopes with either adaptive optics or active optics systems. It has the capability to generate either single-layer or distributed Kolmogorov turbulence phase screens using the FFT. Missing low order spatial frequencies are added using the Karhunen-Loeve expansion. The phase structure curve is extremely dose to the theoreUcal. Secondly, it has the capability to simulate an adaptive optics control systems. The defaultmore » parameters are those of the Keck II adaptive optics system. Thirdly, it has a general wave optics capability to model the science camera halo due to scintillation from atmospheric turbulence and the telescope optics. Although this capability was implemented for the Gemini telescopes, the only default parameter specific to the Gemini telescopes is the primary mirror diameter. Finally, it has a model for the LSST active optics alignment strategy. This last model is highly specific to the LSST« less

  7. XrayOpticsConstants

    Energy Science and Technology Software Center (OSTI)

    2005-06-20

    This application (XrayOpticsConstants) is a tool for displaying X-ray and Optical properties for a given material, x-ray photon energy, and in the case of a gas, pressure. The display includes fields such as the photo-electric absorption attenuation length, density, material composition, index of refraction, and emission properties (for scintillator materials).

  8. Dual frequency optical cavity

    DOE Patents [OSTI]

    George, E. Victor (Livermore, CA); Schipper, John F. (Palo Alto, CA)

    1985-01-01

    Method and apparatus for generating two distinct laser frequencies in an optical cavity, using a "T" configuration laser cavity and means for intermittently increasing or decreasing the index of refraction n of an associated transmission medium in one arm of the optical cavity to enhance laser action in one arm or the second arm of the cavity.

  9. Stepped inlet optical panel

    DOE Patents [OSTI]

    Veligdan, James T. (6 Stephanie La., Manorville, NY 11949)

    2001-01-01

    An optical panel includes stacked optical waveguides having stepped inlet facets collectively defining an inlet face for receiving image light, and having beveled outlet faces collectively defining a display screen for displaying the image light channeled through the waveguides by internal reflection.

  10. Flexible optical panel

    DOE Patents [OSTI]

    Veligdan, James T. (Manorville, NY)

    2001-01-01

    A flexible optical panel includes laminated optical waveguides, each including a ribbon core laminated between cladding, with the core being resilient in the plane of the core for elastically accommodating differential movement thereof to permit winding of the panel in a coil.

  11. Multimode optical fiber

    DOE Patents [OSTI]

    Bigot-Astruc, Marianne; Molin, Denis; Sillard, Pierre

    2014-11-04

    A depressed graded-index multimode optical fiber includes a central core, an inner depressed cladding, a depressed trench, an outer depressed cladding, and an outer cladding. The central core has an alpha-index profile. The depressed claddings limit the impact of leaky modes on optical-fiber performance characteristics (e.g., bandwidth, core size, and/or numerical aperture).

  12. Optical scanning apparatus

    DOE Patents [OSTI]

    Villarreal, R.A.

    1985-11-06

    An optical scanner employed in a radioactive environment for reading indicia imprinted about a cylindrical surface of an article by means of an optical system including metallic reflective and mirror surfaces resistant to degradation and discoloration otherwise imparted to glass surfaces exposed to radiation is described.

  13. Fiber optic hydrophone

    DOE Patents [OSTI]

    Kuzmenko, P.J.; Davis, D.T.

    1994-05-10

    A miniature fiber optic hydrophone based on the principles of a Fabry-Perot interferometer is disclosed. The hydrophone, in one embodiment, includes a body having a shaped flexible bladder at one end which defines a volume containing air or suitable gas, and including a membrane disposed adjacent a vent. An optical fiber extends into the body with one end terminating in spaced relation to the membrane. Acoustic waves in the water that impinge on the bladder cause the pressure of the volume therein to vary causing the membrane to deflect and modulate the reflectivity of the Fabry-Perot cavity formed by the membrane surface and the cleaved end of the optical fiber disposed adjacent to the membrane. When the light is transmitted down the optical fiber, the reflected signal is amplitude modulated by the incident acoustic wave. Another embodiment utilizes a fluid filled volume within which the fiber optic extends. 2 figures.

  14. Fiber optic hydrophone

    DOE Patents [OSTI]

    Kuzmenko, Paul J. (Livermore, CA); Davis, Donald T. (Livermore, CA)

    1994-01-01

    A miniature fiber optic hydrophone based on the principles of a Fabry-Perot interferometer. The hydrophone, in one embodiment, includes a body having a shaped flexible bladder at one end which defines a volume containing air or suitable gas, and including a membrane disposed adjacent a vent. An optic fiber extends into the body with one end terminating in spaced relation to the membrane. Acoustic waves in the water that impinge on the bladder cause the pressure of the volume therein to vary causing the membrane to deflect and modulate the reflectivity of the Fabry-Perot cavity formed by the membrane surface and the cleaved end of the optical fiber disposed adjacent to the membrane. When the light is transmitted down the optical fiber, the reflected signal is amplitude modulated by the incident acoustic wave. Another embodiment utilizes a fluid filled volume within which the fiber optic extends.

  15. Digital optical conversion module

    DOE Patents [OSTI]

    Kotter, D.K.; Rankin, R.A.

    1988-07-19

    A digital optical conversion module used to convert an analog signal to a computer compatible digital signal including a voltage-to-frequency converter, frequency offset response circuitry, and an electrical-to-optical converter. Also used in conjunction with the digital optical conversion module is an optical link and an interface at the computer for converting the optical signal back to an electrical signal. Suitable for use in hostile environments having high levels of electromagnetic interference, the conversion module retains high resolution of the analog signal while eliminating the potential for errors due to noise and interference. The module can be used to link analog output scientific equipment such as an electrometer used with a mass spectrometer to a computer. 2 figs.

  16. Digital optical conversion module

    DOE Patents [OSTI]

    Kotter, Dale K. (North Shelley, ID); Rankin, Richard A. (Ammon, ID)

    1991-02-26

    A digital optical conversion module used to convert an analog signal to a computer compatible digital signal including a voltage-to-frequency converter, frequency offset response circuitry, and an electrical-to-optical converter. Also used in conjunction with the digital optical conversion module is an optical link and an interface at the computer for converting the optical signal back to an electrical signal. Suitable for use in hostile environments having high levels of electromagnetic interference, the conversion module retains high resolution of the analog signal while eliminating the potential for errors due to noise and interference. The module can be used to link analog output scientific equipment such as an electrometer used with a mass spectrometer to a computer.

  17. Fibroblast growth factor-2 up-regulates the expression of nestin through the RasRafERKSp1 signaling axis in C6 glioma cells

    SciTech Connect (OSTI)

    Chang, Kai-Wei; Huang, Yuan-Li; Wong, Zong-Ruei; Su, Peng-Han; Huang, Bu-Miin; Ju, Tsai-Kai; Technology Commons, College of Life Science, National Taiwan University, Taipei 106, Taiwan ; Yang, Hsi-Yuan

    2013-05-17

    Highlights: Nestin expression in C6 glioma cells is induced by FGF-2. Nestin expression is induced by FGF-2 via de novo RNA and protein synthesis. The FGFR inhibitor SU5402 blocks the FGF-2-induced nestin expression. The mRNA of FGFR1 and 3 are detected in C6 glioma cells. RasRafERKSp1 signaling pathway is responsibe for FGF-2-induced nestin expression. -- Abstract: Nestin is a 240-kDa intermediate filament protein expressed mainly in neural and myogenic stem cells. Although a substantial number of studies have focused on the expression of nestin during development of the central nervous system, little is known about the factors that induce and regulate its expression. Fibroblast growth factor-2 (FGF-2) is an effective mitogen and stimulates the proliferation and differentiation of a subset of nestin-expressing cells, including neural progenitor cells, glial precursor cells, and smooth muscle cells. To assess whether FGF-2 is a potent factor that induces the expression of nestin, C6 glioma cells were used. The results showed that nestin expression was up-regulated by FGF-2 via de novo RNA and protein synthesis. Our RT-PCR results showed that C6 glioma cells express FGFR1/3, and FGFRs is required for FGF-2-induced nestin expression. Further signaling analysis also revealed that FGF-2-induced nestin expression is mediated through FGFRMAPKERK signaling axis and the transcriptional factor Sp1. These findings provide new insight into the regulation of nestin in glial system and enable the further studies on the function of nestin in glial cells.

  18. High quality HfO{sub 2}/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8?nm equivalent oxide thickness

    SciTech Connect (OSTI)

    Barth, Michael; Datta, Suman; Bruce Rayner, G.; McDonnell, Stephen; Wallace, Robert M.; Bennett, Brian R.; Engel-Herbert, Roman

    2014-12-01

    We investigate in-situ cleaning of GaSb surfaces and its effect on the electrical performance of p-type GaSb metal-oxide-semiconductor capacitor (MOSCAP) using a remote hydrogen plasma. Ultrathin HfO{sub 2} films grown by atomic layer deposition were used as a high permittivity gate dielectric. Compared to conventional ex-situ chemical cleaning methods, the in-situ GaSb surface treatment resulted in a drastic improvement in the impedance characteristics of the MOSCAPs, directly evidencing a much lower interface trap density and enhanced Fermi level movement efficiency. We demonstrate that by using a combination of ex-situ and in-situ surface cleaning steps, aggressively scaled HfO{sub 2}/p-GaSb MOSCAP structures with a low equivalent oxide thickness of 0.8?nm and efficient gate modulation of the surface potential are achieved, allowing to push the Fermi level far away from the valence band edge high up into the band gap of GaSb.

  19. Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

    SciTech Connect (OSTI)

    Zhu, Y.; Jain, N.; Hudait, M. K.; Mohata, D. K.; Datta, S.; Lubyshev, D.; Fastenau, J. M.; Liu, A. K.

    2012-09-10

    The structural properties and band offset determination of p-channel staggered gap In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} heterostructure tunnel field-effect transistor (TFET) grown by molecular beam epitaxy (MBE) were investigated. High resolution x-ray diffraction revealed that the active layers are strained with respect to 'virtual substrate.' Dynamic secondary ion mass spectrometry confirmed an abrupt junction profile at the In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} heterointerface and minimal level of intermixing between As and Sb atoms. The valence band offset of 0.37 {+-} 0.05 eV was extracted from x-ray photoelectron spectroscopy. A staggered band lineup was confirmed at the heterointerface with an effective tunneling barrier height of 0.13 eV. Thus, MBE-grown staggered gap In{sub 0.7}Ga{sub 0.3}As/GaAs{sub 0.35}Sb{sub 0.65} TFET structures are a promising p-channel option to provide critical guidance for the future design of mixed As/Sb type-II based complementary logic and low power devices.

  20. Projection optics box

    DOE Patents [OSTI]

    Hale, Layton C. (Livermore, CA); Malsbury, Terry (Tracy, CA); Hudyma, Russell M. (San Ramon, CA); Parker, John M. (Tracy, CA)

    2000-01-01

    A projection optics box or assembly for use in an optical assembly, such as in an extreme ultraviolet lithography (EUVL) system using 10-14 nm soft x-ray photons. The projection optics box utilizes a plurality of highly reflective optics or mirrors, each mounted on a precision actuator, and which reflects an optical image, such as from a mask, in the EUVL system onto a point of use, such as a target or silicon wafer, the mask, for example, receiving an optical signal from a source assembly, such as a developed from laser system, via a series of highly reflective mirrors of the EUVL system. The plurality of highly reflective optics or mirrors are mounted in a housing assembly comprised of a series of bulkheads having wall members secured together to form a unit construction of maximum rigidity. Due to the precision actuators, the mirrors must be positioned precisely and remotely in tip, tilt, and piston (three degrees of freedom), while also providing exact constraint.

  1. Concentrator Optics | Open Energy Information

    Open Energy Info (EERE)

    Concentrator Optics Jump to: navigation, search Name: Concentrator Optics Place: Marburg, Germany Zip: 35037 Product: A Germany-based company engaged in the design and production...

  2. ARM - Measurement - Aerosol optical properties

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    : Aerosol optical properties The optical properties of aerosols, including asymmetry factor, phase-function, single-scattering albedo, refractive index, and backscatter...

  3. Tuned optical cavity magnetometer

    DOE Patents [OSTI]

    Okandan, Murat (Edgewood, NM); Schwindt, Peter (Albuquerque, NM)

    2010-11-02

    An atomic magnetometer is disclosed which utilizes an optical cavity formed from a grating and a mirror, with a vapor cell containing an alkali metal vapor located inside the optical cavity. Lasers are used to magnetically polarize the alkali metal vapor and to probe the vapor and generate a diffracted laser beam which can be used to sense a magnetic field. Electrostatic actuators can be used in the magnetometer for positioning of the mirror, or for modulation thereof. Another optical cavity can also be formed from the mirror and a second grating for sensing, adjusting, or stabilizing the position of the mirror.

  4. Fiber optic laser rod

    DOE Patents [OSTI]

    Erickson, G.F.

    1988-04-13

    A laser rod is formed from a plurality of optical fibers, each forming an individual laser. Synchronization of the individual fiber lasers is obtained by evanescent wave coupling between adjacent optical fiber cores. The fiber cores are dye-doped and spaced at a distance appropriate for evanescent wave coupling at the wavelength of the selected dye. An interstitial material having an index of refraction lower than that of the fiber core provides the optical isolation for effective lasing action while maintaining the cores at the appropriate coupling distance. 2 figs.

  5. Optical limiting materials

    DOE Patents [OSTI]

    McBranch, D.W.; Mattes, B.R.; Koskelo, A.C.; Heeger, A.J.; Robinson, J.M.; Smilowitz, L.B.; Klimov, V.I.; Cha, M.; Sariciftci, N.S.; Hummelen, J.C.

    1998-04-21

    Methanofullerenes, fulleroids and/or other fullerenes chemically altered for enhanced solubility, in liquid solution, and in solid blends with transparent glass (SiO{sub 2}) gels or polymers, or semiconducting (conjugated) polymers, are shown to be useful as optical limiters (optical surge protectors). The nonlinear absorption is tunable such that the energy transmitted through such blends saturates at high input energy per pulse over a wide range of wavelengths from 400--1,100 nm by selecting the host material for its absorption wavelength and ability to transfer the absorbed energy into the optical limiting composition dissolved therein. This phenomenon should be generalizable to other compositions than substituted fullerenes. 5 figs.

  6. Scalable optical quantum computer

    SciTech Connect (OSTI)

    Manykin, E A; Mel'nichenko, E V [Institute for Superconductivity and Solid-State Physics, Russian Research Centre 'Kurchatov Institute', Moscow (Russian Federation)

    2014-12-31

    A way of designing a scalable optical quantum computer based on the photon echo effect is proposed. Individual rare earth ions Pr{sup 3+}, regularly located in the lattice of the orthosilicate (Y{sub 2}SiO{sub 5}) crystal, are suggested to be used as optical qubits. Operations with qubits are performed using coherent and incoherent laser pulses. The operation protocol includes both the method of measurement-based quantum computations and the technique of optical computations. Modern hybrid photon echo protocols, which provide a sufficient quantum efficiency when reading recorded states, are considered as most promising for quantum computations and communications. (quantum computer)

  7. Silicon fiber optic sensors

    DOE Patents [OSTI]

    Pocha, Michael D. (Livermore, CA); Swierkowski, Steve P. (Livermore, CA); Wood, Billy E. (Livermore, CA)

    2007-10-02

    A Fabry-Perot cavity is formed by a partially or wholly reflective surface on the free end of an integrated elongate channel or an integrated bounding wall of a chip of a wafer and a partially reflective surface on the end of the optical fiber. Such a constructed device can be utilized to detect one or more physical parameters, such as, for example, strain, through the optical fiber using an optical detection system to provide measuring accuracies of less than aboutb0.1%.

  8. Anisotropic magnetization and transport properties of RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm)

    SciTech Connect (OSTI)

    Myers, Kenneth D.

    1999-11-08

    This study of the RAgSb{sub 2} series of compounds arose as part of an investigation of rare earth intermetallic compounds containing antimony with the rare earth in a position with tetragonal point symmetry. Materials with the rare earth in a position with tetragonal point symmetry frequently manifest strong anisotropies and rich complexity in the magnetic properties, and yet are simple enough to analyze. Antimony containing intermetallic compounds commonly possess low carrier densities and have only recently been the subject of study. Large single grain crystals were grown of the RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm) series of compounds out of a high temperature solution. This method of crystal growth, commonly known as flux growth is a versatile method which takes advantage of the decreasing solubility of the target compound with decreasing temperature. Overall, the results of the crystal growth were impressive with the synthesis of single crystals of LaAgSb{sub 2} approaching one gram. However, the sample yield diminishes as the rare earth elements become smaller and heavier. Consequently, no crystals could be grown with R=Yb or Lu. Furthermore, EuAgSb{sub 2} could not be synthesized, likely due to the divalency of the Eu ion. For most of the RAgSb{sub 2} compounds, strong magnetic anisotropies are created by the crystal electric field splitting of the Hund's rule ground state. This splitting confines the local moments to lie in the basal plane (easy plane) for the majority of the members of the series. Exceptions to this include ErAgSb{sub 2} and TmAgSb{sub 2}, which have moments along the c-axis (easy axis) and CeAgSb{sub 2}, which at intermediate temperatures has an easy plane, but exchange coupling at low temperatures is anisotropic with an easy axis. Additional anisotropy is also observed within the basal plane of DyAgSb{sub 2}, where the moments are restricted to align along one of the {l_angle}110{r_angle} axes. Most of the RAgSb{sub 2} compounds containing magnetic rare earths, antiferromagnetically ordered at low temperatures. The ordering temperatures of these compounds are approximately proportional to the de Gennes factor, which suggests that the RKKY interaction is the dominant exchange interaction between local moments. Although metamagnetic transitions were observed in many members of the series, the series of sharp step-like transitions in DyAgSb{sub 2} are impressive. In this compound, up to 11 different magnetic states are stable depending on the magnitude and direction of the applied field. The saturated magnetization of these states and the critical fields needed to induce a phase transition vary with the direction of the applied field. Through detailed study of the angular dependence of the magnetization and critical fields, the net distribution of magnetic moments was determined for most, of the metamagnetic states. In DyAgSb{sub 2}, the crystal electric field (CEF) splitting of the Hund's rule ground state creates a strong anisotropy where the local Dy{sup 3+} magnetic moments are constrained to one of the equivalent {l_angle}110{r_angle} directions within the basal plane. The four position clock model was introduced to account for this rich metamagnetic system. Within this model, the magnetic moments are constrained to one of four equivalent orientations within the basal plane and interactions are calculated for up third nearest neighbors. The theoretical phase diagram, generated from the coupling constants is in excellent agreement with the experimental phase diagram. Further investigation of this compound using magnetic X-ray or neutron diffraction would be extremely useful to verify the net distributions of moments and determine the wave vectors of each of the ordered states.

  9. Growth and transport properties of epitaxial lattice matched half Heusler CoTiSb/InAlAs/InP(001) heterostructures

    SciTech Connect (OSTI)

    Kawasaki, Jason K.; Johansson, Linda I. M.; Schultz, Brian D.; Palmstrm, Chris J.

    2014-01-13

    We demonstrate the integration of the lattice matched single crystal epitaxial Half Heusler compound CoTiSb with In{sub 0.52}Al{sub 0.48}As/InP(001) heterostructures using molecular beam epitaxy. CoTiSb belongs to the subset of Half Heusler compounds that is expected to be semiconducting, despite being composed entirely of metallic constituents. The lattice matching and epitaxial alignment of the CoTiSb films were confirmed by reflection high energy electron diffraction and X-ray diffraction. Temperature dependent transport measurements indicate semiconducting-like behavior, with a room temperature Hall mobility of 530 cm{sup 2}/Vs and background Hall carrier density of 9.0??10{sup 17}?cm{sup ?3}, which is comparable to n-Si with similar carrier density. Below 100?K, the films show a large negative magnetoresistance, and possible origins of this negative magnetoresistance are discussed.

  10. Gregorian optical system with non-linear optical technology for protection against intense optical transients

    DOE Patents [OSTI]

    Ackermann, Mark R. (Albuquerque, NM); Diels, Jean-Claude M. (Albuquerque, NM)

    2007-06-26

    An optical system comprising a concave primary mirror reflects light through an intermediate focus to a secondary mirror. The secondary mirror re-focuses the image to a final image plane. Optical limiter material is placed near the intermediate focus to optically limit the intensity of light so that downstream components of the optical system are protected from intense optical transients. Additional lenses before and/or after the intermediate focus correct optical aberrations.

  11. Multi-tipped optical component

    DOE Patents [OSTI]

    D'Urso, Brian R.; Simpson, John T.

    2010-04-13

    An optical component has a plurality of parallel noncontiguous optical conduits of at least one protrusive phase material embedded in a recessive phase material that acts as a support structure. The optical conduits extend from a proximal surface to a distal surface of the optical component. The distal surface has a plurality of spaced apart surface features of the protrusive phase material. Each independent optical conduits act as waveguides for a wavelength or range of wavelengths. The optical component can be formed such that the protruding surface features at the distal end of the component form an ordered array. An optical instrument can include the optical component in conjunction with a light source for illuminating a sample and a detector in optical communication optical component via the optical conduits.

  12. Optical gamma thermometer

    DOE Patents [OSTI]

    Koster, Glen Peter; Xia, Hua; Lee, Boon Kwee

    2013-08-06

    An optical gamma thermometer includes a metal mass having a temperature proportional to a gamma flux within a core of a nuclear reactor, and an optical fiber cable for measuring the temperature of the heated metal mass. The temperature of the heated mass may be measured by using one or more fiber grating structures and/or by using scattering techniques, such as Raman, Brillouin, and the like. The optical gamma thermometer may be used in conjunction with a conventional reactor heat balance to calibrate the local power range monitors over their useful in-service life. The optical gamma thermometer occupies much less space within the in-core instrument tube and costs much less than the conventional gamma thermometer.

  13. Stereoscopic optical viewing system

    DOE Patents [OSTI]

    Tallman, Clifford S. (Walnut Creek, CA)

    1987-01-01

    An improved optical system which provides the operator a stereoscopic viewing field and depth of vision, particularly suitable for use in various machines such as electron or laser beam welding and drilling machines. The system features two separate but independently controlled optical viewing assemblies from the eyepiece to a spot directly above the working surface. Each optical assembly comprises a combination of eye pieces, turning prisms, telephoto lenses for providing magnification, achromatic imaging relay lenses and final stage pentagonal turning prisms. Adjustment for variations in distance from the turning prisms to the workpiece, necessitated by varying part sizes and configurations and by the operator's visual accuity, is provided separately for each optical assembly by means of separate manual controls at the operator console or within easy reach of the operator.

  14. Optical displacement sensor

    DOE Patents [OSTI]

    Carr, Dustin W. (Albuquerque, NM)

    2008-04-08

    An optical displacement sensor is disclosed which uses a vertical-cavity surface-emitting laser (VCSEL) coupled to an optical cavity formed by a moveable membrane and an output mirror of the VCSEL. This arrangement renders the lasing characteristics of the VCSEL sensitive to any movement of the membrane produced by sound, vibrations, pressure changes, acceleration, etc. Some embodiments of the optical displacement sensor can further include a light-reflective diffractive lens located on the membrane or adjacent to the VCSEL to control the amount of lasing light coupled back into the VCSEL. A photodetector detects a portion of the lasing light from the VCSEL to provide an electrical output signal for the optical displacement sensor which varies with the movement of the membrane.

  15. Metasurface optical antireflection coating

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhang, Boyang; Hendrickson, Joshua; Nader, Nima; Chen, Hou -Tong; Guo, Junpeng

    2014-12-15

    Light reflection at the boundary of two different media is one of the fundamental phenomena in optics, and reduction of reflection is highly desirable in many optical systems. Traditionally, optical antireflection has been accomplished using single- or multiple-layer dielectric films and graded index surface structures in various wavelength ranges. However, these approaches either impose strict requirements on the refractive index matching and film thickness, or involve complicated fabrication processes and non-planar surfaces that are challenging for device integration. Here, we demonstrate an antireflection coating strategy, both experimentally and numerically, by using metasurfaces with designer optical properties in the mid-wave infrared.more » Our results show that the metasurface antireflection is capable of eliminating reflection and enhancing transmission over a broad spectral band and a wide incidence angle range. The demonstrated antireflection technique has no requirement on the choice of materials and is scalable to other wavelengths.« less

  16. Stereoscopic optical viewing system

    DOE Patents [OSTI]

    Tallman, C.S.

    1986-05-02

    An improved optical system which provides the operator with a stereoscopic viewing field and depth of vision, particularly suitable for use in various machines such as electron or laser beam welding and drilling machines. The system features two separate but independently controlled optical viewing assemblies from the eyepiece to a spot directly above the working surface. Each optical assembly comprises a combination of eye pieces, turning prisms, telephoto lenses for providing magnification, achromatic imaging relay lenses and final stage pentagonal turning prisms. Adjustment for variations in distance from the turning prisms to the workpiece, necessitated by varying part sizes and configurations and by the operator's visual accuity, is provided separately for each optical assembly by means of separate manual controls at the operator console or within easy reach of the operator.

  17. Optical fiber switch

    DOE Patents [OSTI]

    Early, James W. (Los Alamos, NM); Lester, Charles S. (San Juan Pueblo, NM)

    2002-01-01

    Optical fiber switches operated by electrical activation of at least one laser light modulator through which laser light is directed into at least one polarizer are used for the sequential transport of laser light from a single laser into a plurality of optical fibers. In one embodiment of the invention, laser light from a single excitation laser is sequentially transported to a plurality of optical fibers which in turn transport the laser light to separate individual remotely located laser fuel ignitors. The invention can be operated electro-optically with no need for any mechanical or moving parts, or, alternatively, can be operated electro-mechanically. The invention can be used to switch either pulsed or continuous wave laser light.

  18. Fiber optic fluid detector

    DOE Patents [OSTI]

    Angel, S. Michael (Livermore, CA)

    1989-01-01

    Particular gases or liquids are detected with a fiber optic element (11, 11a to 11j) having a cladding or coating of a material (23, 23a to 23j) which absorbs the fluid or fluids and which exhibits a change of an optical property, such as index of refraction, light transmissiveness or fluoresence emission, for example, in response to absorption of the fluid. The fluid is sensed by directing light into the fiber optic element and detecting changes in the light, such as exit angle changes for example, that result from the changed optical property of the coating material. The fluid detector (24, 24a to 24j) may be used for such purposes as sensing toxic or explosive gases in the atmosphere, measuring ground water contamination or monitoring fluid flows in industrial processes, among other uses.

  19. Erected mirror optical switch

    DOE Patents [OSTI]

    Allen, James J.

    2005-06-07

    A microelectromechanical (MEM) optical switching apparatus is disclosed that is based on an erectable mirror which is formed on a rotatable stage using surface micromachining. An electrostatic actuator is also formed on the substrate to rotate the stage and mirror with a high angular precision. The mirror can be erected manually after fabrication of the device and used to redirect an incident light beam at an arbitrary angel and to maintain this state in the absence of any applied electrical power. A 1.times.N optical switch can be formed using a single rotatable mirror. In some embodiments of the present invention, a plurality of rotatable mirrors can be configured so that the stages and mirrors rotate in unison when driven by a single micromotor thereby forming a 2.times.2 optical switch which can be used to switch a pair of incident light beams, or as a building block to form a higher-order optical switch.

  20. Fiber optic fluid detector

    DOE Patents [OSTI]

    Angel, S.M.

    1987-02-27

    Particular gases or liquids are detected with a fiber optic element having a cladding or coating of a material which absorbs the fluid or fluids and which exhibits a change of an optical property, such as index of refraction, light transmissiveness or fluoresence emission, for example, in response to absorption of the fluid. The fluid is sensed by directing light into the fiber optic element and detecting changes in the light, such as exit angle changes for example, that result from the changed optical property of the coating material. The fluid detector may be used for such purposes as sensing toxic or explosive gases in the atmosphere, measuring ground water contamination or monitoring fluid flows in industrial processes, among other uses. 10 figs.

  1. Methods for globally treating silica optics to reduce optical damage

    DOE Patents [OSTI]

    Miller, Philip Edward; Suratwala, Tayyab Ishaq; Bude, Jeffrey Devin; Shen, Nan; Steele, William Augustus; Laurence, Ted Alfred; Feit, Michael Dennis; Wong, Lana Louie

    2012-11-20

    A method for preventing damage caused by high intensity light sources to optical components includes annealing the optical component for a predetermined period. Another method includes etching the optical component in an etchant including fluoride and bi-fluoride ions. The method also includes ultrasonically agitating the etching solution during the process followed by rinsing of the optical component in a rinse bath.

  2. Binary Optics Toolkit

    Energy Science and Technology Software Center (OSTI)

    1996-04-02

    This software is a set of tools for the design and analysis of binary optics. It consists of a series of stand-alone programs written in C and some scripts written in an application-specific language interpreted by a CAD program called DW2000. This software can be used to optimize the design and placement of a complex lens array from input to output and produce contours, mask designs, and data exported for diffractive optic analysis.

  3. Relaying an optical wavefront

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Vawter, G. Allen (Corrales, NM)

    2007-03-06

    A wavefront rely devices samples an incoming optical wavefront at different locations, optically relays the samples while maintaining the relative position of the samples and the relative phase between the samples. The wavefront is reconstructed due to interference of the samples. Devices can be designed for many different wavelengths, including for example the ultraviolet, visible, infrared and even longer wavelengths such as millimeter waves. In one application, the device function as a telescope but with negligible length.

  4. Patent: Optically transduced MEMS magnetometer | DOEpatents

    Office of Scientific and Technical Information (OSTI)

    Optically transduced MEMS magnetometer Citation Details Title: Optically transduced MEMS magnetometer

  5. Ground-state wave function of plutonium in PuSb as determined via x-ray magnetic circular dichroism

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Janoschek, M.; Haskel, D.; Fernandez-Rodriguez, J.; van Veenendaal, M.; Rebizant, J.; Lander, G. H.; Zhu, J. -X.; Thompson, J. D.; Bauer, E. D.

    2015-01-14

    Measurements of x-ray magnetic circular dichroism (XMCD) and x-ray absorption near-edge structure (XANES) spectroscopy at the Pu M₄,₅ edges of the ferromagnet PuSb are reported. Using bulk magnetization measurements and a sum rule analysis of the XMCD spectra, we determine the individual orbital [μL = 2.8(1)μB/Pu] and spin moments [μS = –2.0(1)μB/Pu] of the Pu 5f electrons for the first time. Atomic multiplet calculations of the XMCD and XANES spectra reproduce well the experimental data and are consistent with the experimental value of the spin moment. These measurements of Lz and Sz are in excellent agreement with the values thatmore » have been extracted from neutron magnetic form factor measurements, and confirm the local character of the 5f electrons in PuSb. We demonstrate that a split M₅ as well as a narrow M₄ XMCD signal may serve as a signature of 5f electron localization in actinide compounds.« less

  6. Ground-state wave function of plutonium in PuSb as determined via x-ray magnetic circular dichroism

    SciTech Connect (OSTI)

    Janoschek, M.; Haskel, D.; Fernandez-Rodriguez, J.; van Veenendaal, M.; Rebizant, J.; Lander, G. H.; Zhu, J. -X.; Thompson, J. D.; Bauer, E. D.

    2015-01-01

    Measurements of x-ray magnetic circular dichroism (XMCD) and x-ray absorption near-edge structure (XANES) spectroscopy at the Pu M?,? edges of the ferromagnet PuSb are reported. Using bulk magnetization measurements and a sum rule analysis of the XMCD spectra, we determine the individual orbital [?L = 2.8(1)?B/Pu] and spin moments [?S = ?2.0(1)?B/Pu] of the Pu 5f electrons for the first time. Atomic multiplet calculations of the XMCD and XANES spectra reproduce well the experimental data and are consistent with the experimental value of the spin moment. These measurements of ?Lz? and ?Sz? are in excellent agreement with the values that have been extracted from neutron magnetic form factor measurements, and confirm the local character of the 5f electrons in PuSb. Finally, we demonstrate that a split M? as well as a narrow M? XMCD signal may serve as a signature of 5f electron localization in actinide compounds.

  7. Optical pumping in a whispering mode optical waveguide

    DOE Patents [OSTI]

    Kurnit, Norman A. (Santa Fe, NM)

    1984-01-01

    A device and method for optical pumping in a whispering mode optical waveguide. Both a helical ribbon and cylinder are disclosed which incorporate an additional curvature for confining the beam to increase intensity. An optical pumping medium is disposed in the optical path of the beam as it propagates along the waveguide. Optical pumping is enhanced by the high intensities of the beam and long interaction pathlengths which are achieved in a small volume.

  8. Optical pumping in a whispering-mode optical waveguide

    DOE Patents [OSTI]

    Kurnit, N.A.

    1981-08-11

    A device and method for optical pumping in a whispering mode optical waveguide are described. Both a helical ribbon and cylinder are disclosed which incorporate an additional curvature for confining the beam to increase intensity. An optical pumping medium is disposed in the optical path of the beam as it propagates along the waveguide. Optical pumping is enhanced by the high intensities of the beam and long interaction path lengths which are achieved in a small volume.

  9. Fault location in optical networks

    DOE Patents [OSTI]

    Stevens, Rick C. (Apple Valley, MN); Kryzak, Charles J. (Mendota Heights, MN); Keeler, Gordon A. (Albuquerque, NM); Serkland, Darwin K. (Albuquerque, NM); Geib, Kent M. (Tijeras, NM); Kornrumpf, William P. (Schenectady, NY)

    2008-07-01

    One apparatus embodiment includes an optical emitter and a photodetector. At least a portion of the optical emitter extends a radial distance from a center point. The photodetector provided around at least a portion of the optical emitter and positioned outside the radial distance of the portion of the optical emitter.

  10. Fibre optics: Forty years later

    SciTech Connect (OSTI)

    Dianov, Evgenii M

    2010-01-31

    This paper presents a brief overview of the state of the art in fibre optics and its main applications: optical fibre communications, fibre lasers and fibre sensors for various physical property measurements. The future of fibre optics and the status of this important area of the modern technology in Russia are discussed. (fiber optics)

  11. Embedded fiducials in optical surfaces

    DOE Patents [OSTI]

    Sommargren, Gary E. (Santa Cruz, CA)

    2000-01-01

    Embedded fiducials are provided in optical surfaces and a method for embedding the fiducials. Fiducials, or marks on a surface, are important for optical fabrication and alignment, particularly when individual optical elements are aspheres. Fiducials are used during the course of the polishing process to connect interferometric data, and the equation describing the asphere, to physical points on the optic. By embedding fiducials below the surface of the optic and slightly outside the clear aperture of the optic, the fiducials are not removed by polishing, do not interfere with the polishing process, and do not affect the performance of the finished optic.

  12. Crooker named Optical Society Fellow

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Crooker named Optical Society Fellow January 23, 2014 Scott Crooker of LANL's Condensed Matter and Magnet Science group is a 2014 Fellow of the Optical Society (OSA). The Society selected 71 new Fellows based on their overall impact on optics, as gauged through specific scientific, engineering and technological contributions, significant publications or patents related to optics, technical leadership in the field and service to OSA and the global optics community. Crooker's achievements The

  13. Transparent electrode for optical switch

    DOE Patents [OSTI]

    Goldhar, J.; Henesian, M.A.

    1984-10-19

    The invention relates generally to optical switches and techniques for applying a voltage to an electro-optical crystal, and more particularly, to transparent electodes for an optical switch. System architectures for very large inertial confinement fusion (ICF) lasers require active optical elements with apertures on the order of one meter. Large aperture optical switches are needed for isolation of stages, switch-out from regenerative amplifier cavities and protection from target retroreflections.

  14. Optical high acidity sensor

    DOE Patents [OSTI]

    Jorgensen, Betty S. (Jemez Springs, NM); Nekimken, Howard L. (Los Alamos, NM); Carey, W. Patrick (Lynnwood, WA); O'Rourke, Patrick E. (Martinez, GA)

    1997-01-01

    An apparatus and method for determining acid concentrations in solutions having acid concentrations of from about 0.1 Molar to about 16 Molar is disclosed. The apparatus includes a chamber for interrogation of the sample solution, a fiber optic light source for passing light transversely through the chamber, a fiber optic collector for receiving the collimated light after transmission through the chamber, a coating of an acid resistant polymeric composition upon at least one fiber end or lens, the polymeric composition in contact with the sample solution within the chamber and having a detectable response to acid concentrations within the range of from about 0.1 Molar to about 16 Molar, a measurer for the response of the polymeric composition in contact with the sample solution, and, a comparer of the measured response to predetermined standards whereby the acid molarity of the sample solution within the chamber can be determined. Preferably, a first lens is attached to the end of the fiber optic light source, the first lens adapted to collimate light from the fiber optic light source, and a second lens is attached to the end of the fiber optic collector for focusing the collimated light after transmission through the chamber.

  15. Optical high acidity sensor

    DOE Patents [OSTI]

    Jorgensen, B.S.; Nekimken, H.L.; Carey, W.P.; O`Rourke, P.E.

    1997-07-22

    An apparatus and method for determining acid concentrations in solutions having acid concentrations of from about 0.1 Molar to about 16 Molar is disclosed. The apparatus includes a chamber for interrogation of the sample solution, a fiber optic light source for passing light transversely through the chamber, a fiber optic collector for receiving the collimated light after transmission through the chamber, a coating of an acid resistant polymeric composition upon at least one fiber end or lens, the polymeric composition in contact with the sample solution within the chamber and having a detectable response to acid concentrations within the range of from about 0.1 Molar to about 16 Molar, a measurer for the response of the polymeric composition in contact with the sample solution, and a comparer of the measured response to predetermined standards whereby the acid molarity of the sample solution within the chamber can be determined. Preferably, a first lens is attached to the end of the fiber optic light source, the first lens adapted to collimate light from the fiber optic light source, and a second lens is attached to the end of the fiber optic collector for focusing the collimated light after transmission through the chamber. 10 figs.

  16. Fiber optic hydrogen sensor

    DOE Patents [OSTI]

    Buchanan, Bruce R.; Prather, William S.

    1992-01-01

    An apparatus and method for detecting a chemical substance by exposing an optic fiber having a core and a cladding to the chemical substance so that the chemical substance can be adsorbed onto the surface of the cladding. The optic fiber is coiled inside a container having a pair of valves for controlling the entrance and exit of the substance. Light from a light source is received by one end of the optic fiber, preferably external to the container, and carried by the core of the fiber. Adsorbed substance changes the transmissivity of the fiber as measured by a spectrophotometer at the other end, also preferably external to the container. Hydrogen is detected by the absorption of infrared light carried by an optic fiber with a silica cladding. Since the adsorption is reversible, a sensor according to the present invention can be used repeatedly. Multiple positions in a process system can be monitored using a single container that can be connected to each location to be monitored so that a sample can be obtained for measurement, or, alternatively, containers can be placed near each position and the optic fibers carrying the partially-absorbed light can be multiplexed for rapid sequential reading by a single spectrophotometer.

  17. Fiber optic hydrogen sensor

    DOE Patents [OSTI]

    Buchanan, B.R.; Prather, W.S.

    1991-01-01

    Apparatus and method for detecting a chemical substance by exposing an optic fiber having a core and a cladding to the chemical substance so that the chemical substance can be adsorbed onto the surface of the cladding. The optic fiber is coiled inside a container having a pair of valves for controlling the entrance and exit of the substance. Light from a light source is received by one end of the optic fiber, preferably external to the container, and carried by the core of the fiber. Adsorbed substance changes the transmissivity of the fiber as measured by a spectrophotometer at the other end, also preferably external to the container. Hydrogen is detected by the absorption of infrared light carried by an optic fiber with a silica cladding. Since the adsorption is reversible, a sensor according to the present invention can be used repeatedly. Multiple positions in a process system can be monitored using a single container that can be connected to each location to be monitored so that a sample can be obtained for measurement, or, alternatively, containers can be placed near each position and the optic fibers carrying the partially-absorbed light can be multiplexed for rapid sequential reading, by a single spectrophotometer.

  18. Fiber optic hydrogen sensor

    DOE Patents [OSTI]

    Buchanan, B.R.; Prather, W.S.

    1992-10-06

    An apparatus and method are described for detecting a chemical substance by exposing an optic fiber having a core and a cladding to the chemical substance so that the chemical substance can be adsorbed onto the surface of the cladding. The optic fiber is coiled inside a container having a pair of valves for controlling the entrance and exit of the substance. Light from a light source is received by one end of the optic fiber, preferably external to the container, and carried by the core of the fiber. Adsorbed substance changes the transmissivity of the fiber as measured by a spectrophotometer at the other end, also preferably external to the container. Hydrogen is detected by the absorption of infrared light carried by an optic fiber with a silica cladding. Since the adsorption is reversible, a sensor according to the present invention can be used repeatedly. Multiple positions in a process system can be monitored using a single container that can be connected to each location to be monitored so that a sample can be obtained for measurement, or, alternatively, containers can be placed near each position and the optic fibers carrying the partially-absorbed light can be multiplexed for rapid sequential reading by a single spectrophotometer. 4 figs.

  19. Optical key system

    DOE Patents [OSTI]

    Hagans, Karla G. (Livermore, CA); Clough, Robert E. (Danville, CA)

    2000-01-01

    An optical key system comprises a battery-operated optical key and an isolated lock that derives both its operating power and unlock signals from the correct optical key. A light emitting diode or laser diode is included within the optical key and is connected to transmit a bit-serial password. The key user physically enters either the code-to-transmit directly, or an index to a pseudorandom number code, in the key. Such person identification numbers can be retained permanently, or ephemeral. When a send button is pressed, the key transmits a beam of light modulated with the password information. The modulated beam of light is received by a corresponding optical lock with a photovoltaic cell that produces enough power from the beam of light to operate a password-screen digital logic. In one application, an acceptable password allows a two watt power laser diode to pump ignition and timing information over a fiberoptic cable into a sealed engine compartment. The receipt of a good password allows the fuel pump, spark, and starter systems to each operate. Therefore, bypassing the lock mechanism as is now routine with automobile thieves is pointless because the engine is so thoroughly disabled.

  20. Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

    SciTech Connect (OSTI)

    Zhu, Y.; Jain, N.; Hudait, M. K.; Mohata, D. K.; Datta, S.; Lubyshev, D.; Fastenau, J. M.; Liu, A. K.

    2013-01-14

    The experimental study of the valence band offset ({Delta}E{sub v}) of a mixed As/Sb type-II staggered gap GaAs{sub 0.35}Sb{sub 0.65}/In{sub 0.7}Ga{sub 0.3}As heterostructure used as source/channel junction of n-channel tunnel field effect transistor (TFET) grown by molecular beam epitaxy was investigated by x-ray photoelectron spectroscopy (XPS). Cross-sectional transmission electron micrograph shows high crystalline quality at the source/channel heterointerface. XPS results demonstrate a {Delta}E{sub v} of 0.39 {+-} 0.05 eV at the GaAs{sub 0.35}Sb{sub 0.65}/In{sub 0.7}Ga{sub 0.3}As heterointerface. The conduction band offset was calculated to be {approx}0.49 eV using the band gap values of source and channel materials and the measured valence band offset. An effective tunneling barrier height of 0.21 eV was extracted, suggesting a great promise for designing a metamorphic mixed As/Sb type-II staggered gap TFET device structure for low-power logic applications.

  1. Analytical electron microscopy investigation of elemental composition and bonding structure at the Sb-doped Ni-fully-silicide/SiO{sub 2} interface

    SciTech Connect (OSTI)

    Kawasaki, Naohiko; Sugiyama, Naoyuki; Otsuka, Yuji; Hashimoto, Hideki; Kurata, Hiroki; Isoda, Seiji

    2011-03-15

    It is very important to control the elemental composition and bonding structure at the gate electrode/gate dielectrics interface in metal-oxide-semiconductor transistor devices because this determines the threshold voltage of the gate electrode. In this study, we investigated the structure at the interface between the antimony (Sb)-doped nickel-fully-silicide gate electrode and SiO{sub 2} dielectrics by employing high-spatial resolution techniques such as energy dispersive x-ray spectroscopy and electron energy-loss spectroscopy using a scanning transmission electron microscope. In one region, we found a thin nickel layer at the NiSi/SiO{sub 2} interface originating from the migration of native oxide at the face of the poly-silicon. In another region, a Sb pileup was detected at the NiSi/SiO{sub 2} interface where the Ni L{sub 3}-edge spectrum showed Ni-Sb bonding, then it was suggested that Sb atoms exist at the bottom of NiSi, substituting for Si atoms in NiSi.

  2. Optical and magneto-optical studies of martensitic transformation in

    Office of Scientific and Technical Information (OSTI)

    Ni-Mn-Ga magnetic shape memory alloys (Journal Article) | SciTech Connect Optical and magneto-optical studies of martensitic transformation in Ni-Mn-Ga magnetic shape memory alloys Citation Details In-Document Search Title: Optical and magneto-optical studies of martensitic transformation in Ni-Mn-Ga magnetic shape memory alloys Optical and magneto-optical properties of single crystal of Ni{sub 50.1}Mn{sub 28.4}Ga{sub 21.5} magnetic shape memory alloy during its transformation from

  3. Interactive optical panel

    DOE Patents [OSTI]

    Veligdan, James T. (Manorville, NY)

    1995-10-03

    An interactive optical panel assembly 34 includes an optical panel 10 having a plurality of ribbon optical waveguides 12 stacked together with opposite ends thereof defining panel first and second faces 16, 18. A light source 20 provides an image beam 22 to the panel first face 16 for being channeled through the waveguides 12 and emitted from the panel second face 18 in the form of a viewable light image 24a. A remote device 38 produces a response beam 40 over a discrete selection area 36 of the panel second face 18 for being channeled through at least one of the waveguides 12 toward the panel first face 16. A light sensor 42,50 is disposed across a plurality of the waveguides 12 for detecting the response beam 40 therein for providing interactive capability.

  4. Interactive optical panel

    DOE Patents [OSTI]

    Veligdan, J.T.

    1995-10-03

    An interactive optical panel assembly includes an optical panel having a plurality of ribbon optical waveguides stacked together with opposite ends thereof defining panel first and second faces. A light source provides an image beam to the panel first face for being channeled through the waveguides and emitted from the panel second face in the form of a viewable light image. A remote device produces a response beam over a discrete selection area of the panel second face for being channeled through at least one of the waveguides toward the panel first face. A light sensor is disposed across a plurality of the waveguides for detecting the response beam therein for providing interactive capability. 10 figs.

  5. High-Temperature Thermoelectric Properties of the SolidSolution Zintl Phase Eu11Cd6Sb12xAsx (x < 3)

    SciTech Connect (OSTI)

    Kazem, Nasrin; Xie, Weiwei; Ohno, Saneyuki; Zevalkink, Alexandra; Miller, Gordon J; Snyder, G Jeffrey; Kauzlarich, Susan M

    2014-02-11

    Zintl phases are compounds that have shown promise for thermoelectric applications. The title solidsolution Zintl compounds were prepared from the elements as single crystals using a tin flux for compositions x = 0, 1, 2, and 3. Eu11Cd6Sb12xAsx (x < 3) crystallize isostructurally in the centrosymmetric monoclinic space group C2/m (no. 12, Z = 2) as the Sr11Cd6Sb12 structure type (Pearson symbol mC58). Efforts to make the As compositions for x exceeding ?3 resulted in structures other than the Sr11Cd6Sb12 structure type. Single-crystal X-ray diffraction indicates that As does not randomly substitute for Sb in the structure but is site specific for each composition. The amount of As determined by structural refinement was verified by electron microprobe analysis. Electronic structures and energies calculated for various model structures of Eu11Cd6Sb10As2 (x = 2) indicated that the preferred As substitution pattern involves a mixture of three of the six pnicogen sites in the asymmetric unit. In addition, As substitution at the Pn4 site opens an energy gap at the Fermi level, whereas substitution at the other five pnicogen sites remains semimetallic with a pseudo gap. Thermoelectric properties of these compounds were measured on hot-pressed, fully densified pellets. Samples show exceptionally low lattice thermal conductivities from room temperature to 775 K: 0.780.49 W/mK for x = 0; 0.720.53 W/mK for x = 1; and 0.700.56 W/mK for x = 2. Eu11Cd6Sb12 shows a high p-type Seebeck coefficient (from +118 to 153 ? V/K) but also high electrical resistivity (6.8 to 12.8 m?cm). The value of zT reaches 0.23 at 774 K. The properties of Eu11Cd6Sb12xAsx are interpreted in discussion with the As site substitution.

  6. Absolute calibration of optical flats

    DOE Patents [OSTI]

    Sommargren, Gary E.

    2005-04-05

    The invention uses the phase shifting diffraction interferometer (PSDI) to provide a true point-by-point measurement of absolute flatness over the surface of optical flats. Beams exiting the fiber optics in a PSDI have perfect spherical wavefronts. The measurement beam is reflected from the optical flat and passed through an auxiliary optic to then be combined with the reference beam on a CCD. The combined beams include phase errors due to both the optic under test and the auxiliary optic. Standard phase extraction algorithms are used to calculate this combined phase error. The optical flat is then removed from the system and the measurement fiber is moved to recombine the two beams. The newly combined beams include only the phase errors due to the auxiliary optic. When the second phase measurement is subtracted from the first phase measurement, the absolute phase error of the optical flat is obtained.

  7. Effect of magnetic fields on the Kondo insulator CeRhSb: Magnetoresistance and high-field heat capacity measurements

    SciTech Connect (OSTI)

    Malik, S.K.; Menon, L.; Pecharsky, V.K.; Gschneidner, K.A. Jr.

    1997-05-01

    The compound CeRhSb is a mixed valent Ce-based compound which shows a gap in the electronic density of states at low temperatures. The gap manifests by a rise in electrical resistivity{emdash}below about 8 K from which the gap energy is estimated to be about 4 K. We have carried out heat capacity measurements on this compound in various applied fields up to 9.85 T. The magnetic contribution to the heat capacity, {Delta}C, is found to have a maximum in {Delta}C/T vs T at 10 K, below which {Delta}C/T is linear with T. This is attributed to the fact that below this temperature, in the gapped state, the electronic density of states decreases linearly with decreasing temperature. On application of a magnetic field, the electronic specific heat coefficient {gamma} in the gapped state increases by {approximately}4mJ/molK{sup 2}. The maximum in {Delta}C/T vs T is observed in all fields, which shifts to lower temperatures {approximately}1K at 5.32 T and raises again at 9.85 T to about the same values as at H=0T. This suggests that the gap exists for all fields up to 9.85 T. Above 10 K, in the mixed-valent state, {Delta}C/T vs T decreases with increasing temperature in zero field. There is hardly any effect of application of field in the mixed-valent state. We have also carried out magnetoresistance measurements on CeRhSb up to fields of 5.5 T at 2, 4.5, 10, 20, and 30 K. The magnetoresistance in CeRhSb is positive at temperatures of 4.5 K and above, in applied fields up to 5.5 T. At 5.5 T, the magnetoresistance is maximum at 4.5 K (6{percent}) and decreases with increasing temperature. The observation of the maximum is consistent with the observation of a maximum in {Delta}C/T vs T and is due to a change in the density of states. At a temperature of 2 K, a negative magnetoresistance is observed for magnetic fields greater than {approximately}3.5T which suggests reduction in the gap. {copyright} {ital 1997} {ital The American Physical Society}

  8. Observation and modeling of polycrystalline grain formation in Ge{sub 2}Sb{sub 2}Te{sub 5}

    SciTech Connect (OSTI)

    Burr, Geoffrey W.; Tchoulfian, Pierre; Topuria, Teya; Nyffeler, Clemens; Virwani, Kumar; Padilla, Alvaro; Shelby, Robert M.; Eskandari, Mona; Jackson, Bryan; Lee, Bong-Sub

    2012-05-15

    The relationship between the polycrystalline nature of phase change materials (such as Ge{sub 2}Sb{sub 2}Te{sub 5}) and the intermediate resistance states of phase change memory (PCM) devices has not been widely studied. A full understanding of such states will require knowledge of how polycrystalline grains form, how they interact with each other at various temperatures, and how the differing electrical (and thermal) characteristics within the grains and at their boundaries combine through percolation to produce the externally observed electrical (and thermal) characteristics of a PCM device. We address the first of these tasks (and introduce a vehicle for the second) by studying the formation of fcc polycrystalline grains from the as-deposited amorphous state in undoped Ge{sub 2}Sb{sub 2}Te{sub 5}. We perform ex situ transmission electron microscopy membrane experiments and then match these observations against numerical simulation. Ramped-anneal experiments show that the temperature ramp-rate strongly influences the median grain size. By truncating such ramped-anneal experiments at various peak temperatures, we convincingly demonstrate that the temperature range over which these grains are established is quite narrow. Subsequent annealing at elevated temperature appears to change these established distributions of grain sizes only slightly. Our numerical simulator--which models nuclei formation through classical nucleation theory and then tracks the subsequent time- and temperature-dependent growth of these grains--can match these experimental observations of initial grain distributions and crystallization temperature both qualitatively and quantitatively. These simulations show that the particular narrow temperature range over which crystallization occurs shifts as a function of temperature ramp-rate, which allows us to quantify the lower portions of the time-temperature-transformation map for Ge{sub 2}Sb{sub 2}Te{sub 5}. Future experiments and extensions of the simulator to investigate temperature-dependent interactions between neighboring grains, and to study nucleation from within the melt-quenched amorphous state, are discussed.

  9. Gigashot Optical Laser Demonstrator

    SciTech Connect (OSTI)

    Deri, R. J.

    2015-10-13

    The Gigashot Optical Laser Demonstrator (GOLD) project has demonstrated a novel optical amplifier for high energy pulsed lasers operating at high repetition rates. The amplifier stores enough pump energy to support >10 J of laser output, and employs conduction cooling for thermal management to avoid the need for expensive and bulky high-pressure helium subsystems. A prototype amplifier was fabricated, pumped with diode light at 885 nm, and characterized. Experimental results show that the amplifier provides sufficient small-signal gain and sufficiently low wavefront and birefringence impairments to prove useful in laser systems, at repetition rates up to 60 Hz.

  10. Nonimaging optical illumination system

    DOE Patents [OSTI]

    Winston, R.; Ries, H.

    1998-10-06

    A nonimaging illumination optical device for producing a selected far field illuminance over an angular range. The optical device includes a light source a light reflecting surface, and a family of light edge rays defined along a reference line with the reflecting surface defined in terms of the reference lines a parametric function R(t) where t is a scalar parameter position and R(t)=k(t)+Du(t) where k(t) is a parameterization of the reference line, and D is a distance from a point on the reference line to the reflection surface along the desired edge ray through the point. 35 figs.

  11. Nonimaging optical illumination system

    DOE Patents [OSTI]

    Winston, R.; Ries, H.

    1996-12-17

    A nonimaging illumination optical device for producing a selected far field illuminance over an angular range. The optical device includes a light source, a light reflecting surface, and a family of light edge rays defined along a reference line with the reflecting surface defined in terms of the reference line as a parametric function R(t) where t is a scalar parameter position and R(t)=k(t)+Du(t) where k(t) is a parameterization of the reference line, and D is a distance from a point on the reference line to the reflection surface along the desired edge ray through the point. 35 figs.

  12. Solid state optical microscope

    DOE Patents [OSTI]

    Young, I.T.

    1983-08-09

    A solid state optical microscope wherein wide-field and high-resolution images of an object are produced at a rapid rate by utilizing conventional optics with a charge-coupled photodiode array. A galvanometer scanning mirror, for scanning in one of two orthogonal directions is provided, while the charge-coupled photodiode array scans in the other orthogonal direction. Illumination light from the object is incident upon the photodiodes, creating packets of electrons (signals) which are representative of the illuminated object. The signals are then processed, stored in a memory, and finally displayed as a video signal. 2 figs.

  13. Solid state optical microscope

    DOE Patents [OSTI]

    Young, Ian T. (Pleasanton, CA)

    1983-01-01

    A solid state optical microscope wherein wide-field and high-resolution images of an object are produced at a rapid rate by utilizing conventional optics with a charge-coupled photodiode array. A galvanometer scanning mirror, for scanning in one of two orthogonal directions is provided, while the charge-coupled photodiode array scans in the other orthogonal direction. Illumination light from the object is incident upon the photodiodes, creating packets of electrons (signals) which are representative of the illuminated object. The signals are then processed, stored in a memory, and finally displayed as a video signal.

  14. Full spectrum optical safeguard

    DOE Patents [OSTI]

    Ackerman, Mark R.

    2008-12-02

    An optical safeguard device with two linear variable Fabry-Perot filters aligned relative to a light source with at least one of the filters having a nonlinear dielectric constant material such that, when a light source produces a sufficiently high intensity light, the light alters the characteristics of the nonlinear dielectric constant material to reduce the intensity of light impacting a connected optical sensor. The device can be incorporated into an imaging system on a moving platform, such as an aircraft or satellite.

  15. Optical Characterization Laboratory (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-10-01

    This fact sheet describes the purpose, lab specifications, applications scenarios, and information on how to partner with NREL's Optical Characterization Laboratory at the Energy Systems Integration Facility. The Optical Characterization Laboratory at NREL's Energy Systems Integration Facility (ESIF) conducts optical characterization of large solar concentration devices. Concentration solar power (CSP) mirror panels and concentrating solar systems are tested with an emphasis is on measurement of parabolic trough mirror panels. The Optical Characterization Laboratory provides state-of-the-art characterization and testing capabilities for assessing the optical surface quality and optical performance for various CSP technologies including parabolic troughs, linear Fresnel, dishes, and heliostats.

  16. Characteristics of GaAsSb single quantum well lasers emitting near 1.3 {micro}m

    SciTech Connect (OSTI)

    SPAHN,OLGA B.; KLEM,JOHN F.

    2000-02-17

    The authors report data on GaAsSb single quantum well lasers grown on GaAs substrates. Room temperature pulsed emission at 1.275 {micro}m in a 1,250 {micro}m-long device has been observed. Minimum threshold current densities of 535 A/cm{sup 2} were measured in 2000 {micro}m long lasers. The authors also measured internal losses of 2--5 cm{sup {minus}1}, internal quantum efficiencies of 30-38% and characteristic temperature T{sub 0} of 67--77 C. From these parameters a gain constant G{sub 0} of 1,660 cm{sup {minus}1} and a transparency current density J{sub tr} of 134 A/cm{sup 2} were calculated. The results indicate the potential for fabricating 1.3 {micro}m VCSELs from these materials.

  17. Split image optical display

    DOE Patents [OSTI]

    Veligdan, James T. (Manorville, NY)

    2007-05-29

    A video image is displayed from an optical panel by splitting the image into a plurality of image components, and then projecting the image components through corresponding portions of the panel to collectively form the image. Depth of the display is correspondingly reduced.

  18. Split image optical display

    DOE Patents [OSTI]

    Veligdan, James T.

    2005-05-31

    A video image is displayed from an optical panel by splitting the image into a plurality of image components, and then projecting the image components through corresponding portions of the panel to collectively form the image. Depth of the display is correspondingly reduced.

  19. High throughput optical scanner

    DOE Patents [OSTI]

    Basiji, David A. (Seattle, WA); van den Engh, Gerrit J. (Seattle, WA)

    2001-01-01

    A scanning apparatus is provided to obtain automated, rapid and sensitive scanning of substrate fluorescence, optical density or phosphorescence. The scanner uses a constant path length optical train, which enables the combination of a moving beam for high speed scanning with phase-sensitive detection for noise reduction, comprising a light source, a scanning mirror to receive light from the light source and sweep it across a steering mirror, a steering mirror to receive light from the scanning mirror and reflect it to the substrate, whereby it is swept across the substrate along a scan arc, and a photodetector to receive emitted or scattered light from the substrate, wherein the optical path length from the light source to the photodetector is substantially constant throughout the sweep across the substrate. The optical train can further include a waveguide or mirror to collect emitted or scattered light from the substrate and direct it to the photodetector. For phase-sensitive detection the light source is intensity modulated and the detector is connected to phase-sensitive detection electronics. A scanner using a substrate translator is also provided. For two dimensional imaging the substrate is translated in one dimension while the scanning mirror scans the beam in a second dimension. For a high throughput scanner, stacks of substrates are loaded onto a conveyor belt from a tray feeder.

  20. Structural characterization of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature using neutron powder diffraction and extended X-ray absorption fine structure techniques

    SciTech Connect (OSTI)

    Mansour, A. N.; Wong-Ng, W.; Huang, Q.; Tang, W.; Thompson, A.; Sharp, J.

    2014-08-28

    The structure of Bi{sub 2}Te{sub 3} (Seebeck coefficient Standard Reference Material (SRM 3451)) and the related phase Sb{sub 2}Te{sub 3} have been characterized as a function of temperature using the neutron powder diffraction (NPD) and the extended X-ray absorption fine structure (EXAFS) techniques. The neutron structural studies were carried out from 20?K to 300?K for Bi{sub 2}Te{sub 3} and from 10?K to 298?K for Sb{sub 2}Te{sub 3}. The EXAFS technique for studying the local structure of the two compounds was conducted from 19?K to 298?K. Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} are isostructural, with a space group of R3{sup }m. The structure consists of repeated quintuple layers of atoms, Te2-M-Te1-M-Te2 (where M?=?Bi or Sb) stacking along the c-axis of the unit cell. EXAFS was used to examine the bond distances and static and thermal disorders for the first three shells of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} as a function of temperature. The temperature dependencies of thermal disorders were analyzed using the Debye and Einstein models for lattice vibrations. The Debye and Einstein temperatures for the first two shells of Bi{sub 2}Te{sub 3} are similar to those of Sb{sub 2}Te{sub 3} within the uncertainty in the data. However, the Debye and Einstein temperatures for the third shell of Bi-Bi are significantly lower than those of the third shell of Sb-Sb. The Einstein temperature for the third shell is consistent with a soft phonon mode in both Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3}. The lower Einstein temperature of Bi-Bi relative to Sb-Sb is consistent with the lower value of thermal conductivity of Bi{sub 2}Te{sub 3} relative to Sb{sub 2}Te{sub 3}.

  1. Optical apparatus for forming correlation spectrometers and optical processors

    DOE Patents [OSTI]

    Butler, Michael A. (Albuquerque, NM); Ricco, Antonio J. (Albuquerque, NM); Sinclair, Michael B. (Albuquerque, NM); Senturia, Stephen D. (Brookline, MA)

    1999-01-01

    Optical apparatus for forming correlation spectrometers and optical processors. The optical apparatus comprises one or more diffractive optical elements formed on a substrate for receiving light from a source and processing the incident light. The optical apparatus includes an addressing element for alternately addressing each diffractive optical element thereof to produce for one unit of time a first correlation with the incident light, and to produce for a different unit of time a second correlation with the incident light that is different from the first correlation. In preferred embodiments of the invention, the optical apparatus is in the form of a correlation spectrometer; and in other embodiments, the apparatus is in the form of an optical processor. In some embodiments, the optical apparatus comprises a plurality of diffractive optical elements on a common substrate for forming first and second gratings that alternately intercept the incident light for different units of time. In other embodiments, the optical apparatus includes an electrically-programmable diffraction grating that may be alternately switched between a plurality of grating states thereof for processing the incident light. The optical apparatus may be formed, at least in part, by a micromachining process.

  2. Optical apparatus for forming correlation spectrometers and optical processors

    DOE Patents [OSTI]

    Butler, M.A.; Ricco, A.J.; Sinclair, M.B.; Senturia, S.D.

    1999-05-18

    Optical apparatus is disclosed for forming correlation spectrometers and optical processors. The optical apparatus comprises one or more diffractive optical elements formed on a substrate for receiving light from a source and processing the incident light. The optical apparatus includes an addressing element for alternately addressing each diffractive optical element thereof to produce for one unit of time a first correlation with the incident light, and to produce for a different unit of time a second correlation with the incident light that is different from the first correlation. In preferred embodiments of the invention, the optical apparatus is in the form of a correlation spectrometer; and in other embodiments, the apparatus is in the form of an optical processor. In some embodiments, the optical apparatus comprises a plurality of diffractive optical elements on a common substrate for forming first and second gratings that alternately intercept the incident light for different units of time. In other embodiments, the optical apparatus includes an electrically-programmable diffraction grating that may be alternately switched between a plurality of grating states thereof for processing the incident light. The optical apparatus may be formed, at least in part, by a micromachining process. 24 figs.

  3. 4-ID-D optics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4-ID-D Beamline Optics A schetch of the major optical components for beam line 4-ID-D are shown above. All these components located in the B-station upstream from the D...

  4. Optical fiber stripper positioning apparatus

    DOE Patents [OSTI]

    Fyfe, Richard W. (Las Vegas, NV); Sanchez, Jr., Amadeo (Las Vegas, NV)

    1990-01-01

    An optical fiber positioning apparatus for an optical fiber stripping device is disclosed which is capable of providing precise axial alignment between an optical fiber to be stripped of its outer jacket and the cutting blades of a stripping device. The apparatus includes a first bore having a width approximately equal to the diameter of an unstripped optical fiber and a counter bore axially aligned with the first bore and dimensioned to precisely receive a portion of the stripping device in axial alignment with notched cutting blades within the stripping device to thereby axially align the notched cutting blades of the stripping device with the axis of the optical fiber to permit the notched cutting blades to sever the jacket on the optical fiber without damaging the cladding on the optical fiber. In a preferred embodiment, the apparatus further includes a fiber stop which permits determination of the length of jacket to be removed from the optical fiber.

  5. Diagnostics Implemented on NIF - Optical

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Streaked Optical Pyrometer Shared LOS 90-315 DIM LLNL SOP measures the breakout time of an optically emitting shock. Robert M. Malone et al., "Combining a thermal-imaging...

  6. Magneto-optic current sensor

    DOE Patents [OSTI]

    Lanagan, Michael T.; Valsko-Vlasov, Vitalii K.; Fisher, Brandon L.; Welp, Ulrich

    2003-10-07

    An optical current transducer configured to sense current in the conductor is disclosed. The optical current transducer includes a light source and a polarizer that generates linearly polarized light received from a the light source. The light is communicated to a magneto-optic garnet that includes, among other elements, bismuth, iron and oxygen and is coupled to the conductor. The magneto-optic garnet is configured to rotate the polarization of the linearly polarized light received from the polarizer. The optical current transducer also includes an analyzer in optical communication with the magneto-optic garnet. The analyzer detects the rotation of the linearly polarized light caused by the magneto-optic garnet.

  7. Crooker named Optical Society Fellow

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Crooker named Optical Society Fellow Crooker named Optical Society Fellow The society recognized Crooker for "the development and application of magneto-optical spectroscopies to colloidal quantum dots and to electron spin transport and noise in semiconductors." January 23, 2014 Scott Crooker Scott Crooker Crooker's research focuses on the development of ultra-sensitive optical techniques to measure the static and dynamic properties of electron spins and magnetization in semiconductor

  8. Optics learning through affordable kit

    SciTech Connect (OSTI)

    P, Anusha N E-mail: chitrashaji@gmail.com Shaji, Chitra E-mail: chitrashaji@gmail.com Sharan, Alok E-mail: chitrashaji@gmail.com

    2014-10-15

    An affordable kit which helps to understand some of the optical phenomena qualitatively and quantitatively is presented in this paper. It supplements optics taught in classes. The kit consists of equipments which are available in the market at nominal cost such as laser pointer, lenses, glass plates, razor blades, coins, ball bearing etc. Experiments which come under wave optics (interference and diffraction) and ray optics (reflection and refraction) are explained using this kit.

  9. Large core fiber optic cleaver

    DOE Patents [OSTI]

    Halpin, J.M.

    1996-03-26

    The present invention relates to a device and method for cleaving optical fibers which yields cleaved optical fiber ends possessing high damage threshold surfaces. The device can be used to cleave optical fibers with core diameters greater than 400 {micro}m. 30 figs.

  10. Large core fiber optic cleaver

    DOE Patents [OSTI]

    Halpin, John M. (Livermore, CA)

    1996-01-01

    The present invention relates to a device and method for cleaving optical fibers which yields cleaved optical fiber ends possessing high damage threshold surfaces. The device can be used to cleave optical fibers with core diameters greater than 400 .mu.m.

  11. Aerogel-clad optical fiber

    DOE Patents [OSTI]

    Sprehn, G.A.; Hrubesh, L.W.; Poco, J.F.; Sandler, P.H.

    1997-11-04

    An optical fiber is surrounded by an aerogel cladding. For a low density aerogel, the index of refraction of the aerogel is close to that of air, which provides a high numerical aperture to the optical fiber. Due to the high numerical aperture, the aerogel clad optical fiber has improved light collection efficiency. 4 figs.

  12. Aerogel-clad optical fiber

    DOE Patents [OSTI]

    Sprehn, Gregory A. (Livermore, CA); Hrubesh, Lawrence W. (Pleasanton, CA); Poco, John F. (Livermore, CA); Sandler, Pamela H. (San Marino, CA)

    1997-01-01

    An optical fiber is surrounded by an aerogel cladding. For a low density aerogel, the index of refraction of the aerogel is close to that of air, which provides a high numerical aperture to the optical fiber. Due to the high numerical aperture, the aerogel clad optical fiber has improved light collection efficiency.

  13. Improved Thermoelectric Performance of p-type Skutterudite YbxFe4-yPtySb12 (0.8 x 1, y = 1 and 0.5)

    SciTech Connect (OSTI)

    Cho, Jung Y; Ye, Zuxin; Tessema, Misle; Salvador, James R.; Waldo, Richard; Yang, Jiong; Zhang, Weiqing; Yang, Jihui; Cai, Wei; Wang, Hsin

    2013-01-01

    Thermoelectric performance of p-type skutterudites currently lags that of the corresponding n-type materials and improvement of this important class of materials have become the focus of considerable research effort world-wide. Recent calculations find promising band structural features in p-type skutterudite materials of the type AeFe3NiSb12 ( Ae = Ca, Sr, or Ba) which could potentially lead to excellent thermoelectric properties. Recent work on the Yb- filled analog of the these formulations (YbFe3NiSb12) however finds that the onset of intrinsic conduction at lower than expected temperatures deteriorates the performance above 500 K leading to poor performance in the temperature range of interest for automotive waste heat recovery applications. We therefore seek a way to increase the band gap in order to find a way to minimize the deleterious effects of intrinsic conduction. Here we present ab initio band structure calculations and the synthesis and thermoelectric properties of YbxFe4-yPtySb12 (0.8 x 1, y = 1 and 0.5). Ab initio calculations find that the band gap increases for YbFe3PtSb12 as compared to the Ni-containing analog, though no such increase in the band gap energy was found for as compared to YbFe3.5Ni0.5Sb12. The y = 1 samples shows a characteristic transition to intrinsic conduction with a decrease in the Seebeck coefficient at temperatures above 700 K. The increased carrier concentration in y = 0.5 virtually eliminates any evidence of intrinsic conduction and the Seebeck coefficients for these samples increase monotonically up to 750 K, resulting in power factors approaching 27 W/cm K2 at 750 K. These power factors combined with low thermal conductivity result in a ZT = 0.9 at 750 K for Yb0.95Fe3.5Pt0.5Sb12.

  14. Nonimaging optical illumination system

    DOE Patents [OSTI]

    Winston, Roland (Chicago, IL); Ries, Harald (Villigen PSI, CH)

    1998-01-01

    A nonimaging illumination optical device for producing a selected far field illuminance over an angular range. The optical device includes a light source 102, a light reflecting surface 108, and a family of light edge rays defined along a reference line 104 with the reflecting surface 108 defined in terms of the reference line 104 as a parametric function R(t) where t is a scalar parameter position and R(t)=k(t)+Du(t) where k(t) is a parameterization of the reference line 104, and D is a distance from a point on the reference line 104 to the reflection surface 108 along the desired edge ray through the point.

  15. Nonimaging optical illumination system

    DOE Patents [OSTI]

    Winston, Roland (Chicago, IL); Ries, Harald (Villigen, CH)

    1996-01-01

    A nonimaging illumination optical device for producing a selected far field illuminance over an angular range. The optical device includes a light source 102, a light reflecting surface 108, and a family of light edge rays defined along a reference line 104 with the reflecting surface 108 defined in terms of the reference line 104 as a parametric function R(t) where t is a scalar parameter position and R(t)=k(t)+Du(t) where k(t) is a parameterization of the reference line 104, and D is a distance from a point on the reference line 104 to the reflection surface 108 along the desired edge ray through the point.

  16. Nonimaging optical illumination system

    DOE Patents [OSTI]

    Winston, Roland (Chicago, IL); Ries, Harald (Villigen PSI, CH)

    2000-01-01

    A nonimaging illumination optical device for producing a selected far field illuminance over an angular range. The optical device includes a light source 102, a light reflecting surface 108, and a family of light edge rays defined along a reference line 104 with the reflecting surface 108 defined in terms of the reference line 104 as a parametric function R(t) where t is a scalar parameter position and R(t)=k(t)+Du(t) where k(t) is a parameterization of the reference line 104, and D is a distance from a point on the reference line 104 to the reflection surface 108 along the desired edge ray through the point.

  17. Thin optical display panel

    DOE Patents [OSTI]

    Veligdan, James Thomas (Manorville, NY)

    1997-01-01

    An optical display includes a plurality of optical waveguides each including a cladding bound core for guiding internal display light between first and second opposite ends by total internal reflection. The waveguides are stacked together to define a collective display thickness. Each of the cores includes a heterogeneous portion defining a light scattering site disposed longitudinally between the first and second ends. Adjacent ones of the sites are longitudinally offset from each other for forming a longitudinal internal image display over the display thickness upon scattering of internal display light thereagainst for generating a display image. In a preferred embodiment, the waveguides and scattering sites are transparent for transmitting therethrough an external image in superposition with the display image formed by scattering the internal light off the scattering sites for defining a heads up display.

  18. Nonimaging Optical Illumination System

    DOE Patents [OSTI]

    Winston, Roland (Chicago, IL)

    1994-02-22

    A nonimaging illumination or concentration optical device. An optical device is provided having a light source, a light reflecting surface with an opening and positioned partially around the light source which is opposite the opening of the light reflecting surface. The light reflecting surface is disposed to produce a substantially uniform intensity output with the reflecting surface defined in terms of a radius vector R.sub.i in conjunction with an angle .phi..sub.i between R.sub.i, a direction from the source and an angle .theta..sub.i between direct forward illumination and the light ray reflected once from the reflecting surface. R.sub.i varies as the exponential of tan (.phi..sub.i -.theta..sub.i)/2 integrated over .phi..sub.i.

  19. Fiber optic moisture sensor

    DOE Patents [OSTI]

    Kirkham, R.R.

    1984-08-03

    A method and apparatus for sensing moisture changes by utilizing optical fiber technology. One embodiment uses a reflective target at the end of an optical fiber. The reflectance of the target varies with its moisture content and can be detected by a remote unit at the opposite end of the fiber. A second embodiment utilizes changes in light loss along the fiber length. This can be attributed to changes in reflectance of cladding material as a function of its moisture content. It can also be affected by holes or inserts interposed in the cladding material and/or fiber. Changing light levels can also be coupled from one fiber to another in an assembly of fibers as a function of varying moisture content in their overlapping lengths of cladding material.

  20. Black optic display

    DOE Patents [OSTI]

    Veligdan, James T. (Manorville, NY)

    1997-01-01

    An optical display includes a plurality of stacked optical waveguides having first and second opposite ends collectively defining an image input face and an image screen, respectively, with the screen being oblique to the input face. Each of the waveguides includes a transparent core bound by a cladding layer having a lower index of refraction for effecting internal reflection of image light transmitted into the input face to project an image on the screen, with each of the cladding layers including a cladding cap integrally joined thereto at the waveguide second ends. Each of the cores is beveled at the waveguide second end so that the cladding cap is viewable through the transparent core. Each of the cladding caps is black for absorbing external ambient light incident upon the screen for improving contrast of the image projected internally on the screen.

  1. Modular optical detector system

    DOE Patents [OSTI]

    Horn, Brent A.; Renzi, Ronald F.

    2006-02-14

    A modular optical detector system. The detector system is designed to detect the presence of molecules or molecular species by inducing fluorescence with exciting radiation and detecting the emitted fluorescence. Because the system is capable of accurately detecting and measuring picomolar concentrations it is ideally suited for use with microchemical analysis systems generally and capillary chromatographic systems in particular. By employing a modular design, the detector system provides both the ability to replace various elements of the detector system without requiring extensive realignment or recalibration of the components as well as minimal user interaction with the system. In addition, the modular concept provides for the use and addition of a wide variety of components, including optical elements (lenses and filters), light sources, and detection means, to fit particular needs.

  2. Optically pulsed electron accelerator

    DOE Patents [OSTI]

    Fraser, J.S.; Sheffield, R.L.

    1985-05-20

    An optically pulsed electron accelerator can be used as an injector for a free electron laser and comprises a pulsed light source, such as a laser, for providing discrete incident light pulses. A photoemissive electron source emits electron bursts having the same duration as the incident light pulses when impinged upon by same. The photoemissive electron source is located on an inside wall of a radiofrequency-powered accelerator cell which accelerates the electron burst emitted by the photoemissive electron source.

  3. Optically pulsed electron accelerator

    DOE Patents [OSTI]

    Fraser, John S. (Los Alamos, NM); Sheffield, Richard L. (Los Alamos, NM)

    1987-01-01

    An optically pulsed electron accelerator can be used as an injector for a free electron laser and comprises a pulsed light source, such as a laser, for providing discrete incident light pulses. A photoemissive electron source emits electron bursts having the same duration as the incident light pulses when impinged upon by same. The photoemissive electron source is located on an inside wall of a radio frequency powered accelerator cell which accelerates the electron burst emitted by the photoemissive electron source.

  4. MicroSight Optics

    ScienceCinema (OSTI)

    None

    2013-05-28

    MicroSight is an innovative gunsight technology that allows a marksman's eye to focus on both the front gunsight and the intended target. The MicroSight improves both firearm safety and performance by imaging two objects at different focal distances. The MicroSight was developed at Idaho National Laboratory, and has been licensed by Apollo Optical Systems. You can learn more about INL's research programs at http://www.facebook.com/idahonationallaboratory.

  5. Triggered optical biosensor

    DOE Patents [OSTI]

    Song, Xuedong (Los Alamos, NM); Swanson, Basil I. (Los Alamos, NM)

    2001-10-02

    An optical biosensor is provided for the detection of a multivalent target biomolecule, the biosensor including a substrate having a bilayer membrane thereon, a recognition molecule situated at the surface, the recognition molecule capable of binding with the multivalent target biomolecule, the recognition molecule further characterized as including a fluorescence label thereon and as being movable at the surface and a device for measuring a fluorescence change in response to binding between the recognition molecule and the multivalent target biomolecule.

  6. Enhanced radiation resistant fiber optics

    DOE Patents [OSTI]

    Lyons, P.B.; Looney, L.D.

    1993-11-30

    A process for producing an optical fiber having enhanced radiation resistance is provided, the process including maintaining an optical fiber within a hydrogen-containing atmosphere for sufficient time to yield a hydrogen-permeated optical fiber having an elevated internal hydrogen concentration, and irradiating the hydrogen-permeated optical fiber at a time while the optical fiber has an elevated internal hydrogen concentration with a source of ionizing radiation. The radiation source is typically a cobalt-60 source and the fiber is pre-irradiated with a dose level up to about 1000 kilorads of radiation. 4 figures.

  7. Enhanced radiation resistant fiber optics

    DOE Patents [OSTI]

    Lyons, Peter B. (Los Alamos, NM); Looney, Larry D. (Los Alamos, NM)

    1993-01-01

    A process for producing an optical fiber having enhanced radiation resitance is provided, the process including maintaining an optical fiber within a hydrogen-containing atmosphere for sufficient time to yield a hydrogen-permeated optical fiber having an elevated internal hydrogen concentration, and irradiating the hydrogen-permeated optical fiber at a time while the optical fiber has an elevated internal hydrogen concentration with a source of ionizing radiation. The radiation source is typically a cobalt-60 source and the fiber is pre-irradiated with a dose level up to about 1000 kilorads of radiation.

  8. Optical ionization detector

    DOE Patents [OSTI]

    Wuest, C.R.; Lowry, M.E.

    1994-03-29

    An optical ionization detector wherein a beam of light is split so that one arm passes through a fiber optics and the other arm passes through a gas-filled region, and uses interferometry to detect density changes in a gas when charged particles pass through it. The gas-filled region of the detector is subjected to a high electric field and as a charged particle traverses this gas region electrons are freed from the cathode and accelerated so as to generate an electron avalanche which is collected on the anode. The gas density is effected by the electron avalanche formation and if the index or refraction is proportional to the gas density the index will change accordingly. The detector uses this index change by modulating the one arm of the split light beam passing through the gas, with respect to the other arm that is passed through the fiber optic. Upon recombining of the beams, interference fringe changes as a function of the index change indicates the passage of charged particles through the gaseous medium. 3 figures.

  9. Optical fiber inspection system

    DOE Patents [OSTI]

    Moore, Francis W. (Richland, WA)

    1987-01-01

    A remote optical inspection system including an inspection head. The inspection head has a passageway through which pellets or other objects are passed. A window is provided along the passageway through which light is beamed against the objects being inspected. A plurality of lens assemblies are arranged about the window so that reflected light can be gathered and transferred to a plurality of coherent optical fiber light guides. The light guides transfer the light images to a television or other image transducer which converts the optical images into a representative electronic signal. The electronic signal can then be displayed on a signal viewer such as a television monitor for inspection by a person. A staging means can be used to support the objects for viewing through the window. Routing means can be used to direct inspected objects into appropriate exit passages for accepted or rejected objects. The inspected objects are advantageously fed in a singular manner to the staging means and routing means. The inspection system is advantageously used in an enclosure when toxic or hazardous materials are being inspected.

  10. Optical fiber inspection system

    DOE Patents [OSTI]

    Moore, F.W.

    1985-04-05

    A remote optical inspection system including an inspection head. The inspection head has a passageway through which pellets or other objects are passed. A window is provided along the passageway through which light is beamed against the objects being inspected. A plurality of lens assemblies are arranged about the window so that reflected light can be gathered and transferred to a plurality of coherent optical fiber light guides. The light guides transfer the light images to a television or other image transducer which converts the optical images into a representative electronic signal. The electronic signal can then be displayed on a signal viewer such as a television monitor for inspection by a person. A staging means can be used to support the objects for viewing through the window. Routing means can be used to direct inspected objects into appropriate exit passages for accepted or rejected objects. The inspected objects are advantageously fed in a singular manner to the staging means and routing means. The inspection system is advantageously used in an enclosure when toxic or hazardous materials are being inspected. 10 figs.

  11. Optical polarizer material

    DOE Patents [OSTI]

    Ebbers, C.A.

    1999-08-31

    Several crystals have been identified which can be grown using standard single crystals growth techniques and which have a high birefringence. The identified crystals include Li.sub.2 CO.sub.3, LiNaCO.sub.3, LiKCO.sub.3, LiRbCO.sub.3 and LiCsCO.sub.3. The condition of high birefringence leads to their application as optical polarizer materials. In one embodiment of the invention, the crystal has the chemical formula LiK.sub.(1-w-x-y) Na.sub.(1-w-x-z) Rb.sub.(1-w-y-z) Cs.sub.(1-x-y-z) CO.sub.3, where w+x+y+z=1. In another embodiment, the crystalline material may be selected from a an alkali metal carbonate and a double salt of alkali metal carbonates, where the polarizer has a Wollaston configuration, a Glan-Thompson configuration or a Glan-Taylor configuration. A method of making an LiNaCO.sub.3 optical polarizer is described. A similar method is shown for making an LiKCO.sub.3 optical polarizer.

  12. Optical polarizer material

    DOE Patents [OSTI]

    Ebbers, Christopher A. (Livermore, CA)

    1999-01-01

    Several crystals have been identified which can be grown using standard single crystals growth techniques and which have a high birefringence. The identified crystals include Li.sub.2 CO.sub.3, LiNaCO.sub.3, LiKCO.sub.3, LiRbCO.sub.3 and LiCsCO.sub.3. The condition of high birefringence leads to their application as optical polarizer materials. In one embodiment of the invention, the crystal has the chemical formula LiK.sub.(1-w-x-y) Na.sub.(1-w-x-z) Rb.sub.(1-w-y-z) Cs.sub.(1-x-y-z) CO.sub.3, where w+x+y+z=1. In another embodiment, the crystalline material may be selected from a an alkali metal carbonate and a double salt of alkali metal carbonates, where the polarizer has a Wollaston configuration, a Glan-Thompson configuration or a Glan-Taylor configuration. A method of making an LiNaCO.sub.3 optical polarizer is described. A similar method is shown for making an LiKCO.sub.3 optical polarizer.

  13. Optical ionization detector

    DOE Patents [OSTI]

    Wuest, Craig R. (Danville, CA); Lowry, Mark E. (Castro Valley, CA)

    1994-01-01

    An optical ionization detector wherein a beam of light is split so that one arm passes through a fiber optics and the other arm passes through a gas-filled region, and uses interferometry to detect density changes in a gas when charged particles pass through it. The gas-filled region of the detector is subjected to a high electric field and as a charged particle traverses this gas region electrons are freed from the cathode and accelerated so as to generate an electron avalanche which is collected on the anode. The gas density is effected by the electron avalanche formation and if the index or refraction is proportional to the gas density the index will change accordingly. The detector uses this index change by modulating the one arm of the split light beam passing through the gas, with respect to the other arm that is passed through the fiber optic. Upon recombining of the beams, interference fringe changes as a function of the index change indicates the passage of charged particles through the gaseous medium.

  14. Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al{sub 2}O{sub 3} on GaSb(100)

    SciTech Connect (OSTI)

    Zhernokletov, Dmitry M.; Dong, Hong; Brennan, Barry; Kim, Jiyoung; Wallace, Robert M.; Yakimov, Michael; Tokranov, Vadim; Oktyabrsky, Serge

    2013-11-15

    In-situ monochromatic x-ray photoelectron spectroscopy, low energy electron diffraction, ion scattering spectroscopy, and transmission electron microscopy are used to examine the GaSb(100) surfaces grown by molecular beam epitaxy after thermal desorption of a protective As or Sb layer and subsequent atomic layer deposition (ALD) of Al{sub 2}O{sub 3}. An antimony protective layer is found to be more favorable compared to an arsenic capping layer as it prevents As alloys from forming with the GaSb substrate. The evolution of oxide free GaSb/Al{sub 2}O{sub 3} interface is investigated by “half-cycle” ALD reactions of trimethyl aluminum and deionized water.

  15. Large optics inspection, tilting, and washing stand

    DOE Patents [OSTI]

    Ayers, Marion Jay; Ayers, Shannon Lee

    2012-10-09

    A large optics stand provides a risk free means of safely tilting large optics with ease and a method of safely tilting large optics with ease. The optics are supported in the horizontal position by pads. In the vertical plane the optics are supported by saddles that evenly distribute the optics weight over a large area.

  16. Large optics inspection, tilting, and washing stand

    DOE Patents [OSTI]

    Ayers, Marion Jay (Brentwood, CA); Ayers, Shannon Lee (Brentwood, CA)

    2010-08-24

    A large optics stand provides a risk free means of safely tilting large optics with ease and a method of safely tilting large optics with ease. The optics are supported in the horizontal position by pads. In the vertical plane the optics are supported by saddles that evenly distribute the optics weight over a large area.

  17. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.01.2??m due to increased charge carrier's localization

    SciTech Connect (OSTI)

    Kryzhkov, D. I. Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F.; Zvonkov, B. N.; Vikhrova, O. V.

    2014-11-28

    In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2??m) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

  18. Reverse Monte Carlo simulation of Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} glasses

    SciTech Connect (OSTI)

    Abdel-Baset, A. M.; Rashad, M.; Moharram, A. H.

    2013-12-16

    Two-dimensional Monte Carlo of the total pair distribution functions g(r) is determined for Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} alloys, and then it used to assemble the three-dimensional atomic configurations using the reverse Monte Carlo simulation. The partial pair distribution functions g{sub ij}(r) indicate that the basic structure unit in the Se{sub 80}Te{sub 15}Sb{sub 5} glass is di-antimony tri-selenide units connected together through Se-Se and Se-Te chain. The structure of Se{sub 80}Te{sub 20} alloys is a chain of Se-Te and Se-Se in addition to some rings of Se atoms.

  19. Explosive boiling of Ge{sub 35}Sb{sub 10}S{sub 55} glass induced by a CW laser

    SciTech Connect (OSTI)

    Knotek, P.; Tichy, L.

    2013-09-01

    Graphical abstract: - Highlights: Interaction of the CW 785 nm laser with chalcogenide GeSbS glass. First demonstration of the explosive boiling induced by CW laser in glass. Different processes as photo-induced oxidation, expansion, and viscosity-flow observed. Applied diagnostics SEM, DHM, AFM, force spectroscopy, and micro-Raman spectroscopy. Damage threshold determined at 1.2 10{sup 24}s{sup ?1} cm{sup ?3} of absorbed photons. - Abstract: The response of bulk Ge{sub 35}Sb{sub 10}S{sub 55} glass to illumination by a continuous wave (CW) laser, sub-band-gap photons, was studied specifically with an atomic force microscopy including a force spectroscopy, with a digital holographic microscopy and with a scanning electron microscopy. Depending on the number of photons absorbed, photo-expansion, photo-oxidation and explosive boiling were observed.

  20. Record figure of merit values of highly stoichiometric Sb2Te3 porous bulk synthesized from tailor-made molecular precursors in ionic liquids

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Heimann, Stefan; Schulz, Stephan; Schaumann, Julian; Mudring, Anja; Stötzel, Julia; Maculewicz, Franziska; Schierning, Gabi

    2015-08-06

    We report on the synthesis of Sb2Te3 nanoparticles with record-high figure of merit values of up to 1.5. The central thermoelectric parameters, electrical conductivity, thermal conductivity and Seebeck coefficient, were independently optimized. Critical influence of porosity for the fabrication of highly efficient thermoelectric materials is firstly demonstrated, giving a strong guidance for the optimization of other thermoelectric materials.

  1. Pedestal substrate for coated optics

    DOE Patents [OSTI]

    Hale, Layton C.; Malsbury, Terry N.; Patterson, Steven R.

    2001-01-01

    A pedestal optical substrate that simultaneously provides high substrate dynamic stiffness, provides low surface figure sensitivity to mechanical mounting hardware inputs, and constrains surface figure changes caused by optical coatings to be primarily spherical in nature. The pedestal optical substrate includes a disk-like optic or substrate section having a top surface that is coated, a disk-like base section that provides location at which the substrate can be mounted, and a connecting cylindrical section between the base and optics or substrate sections. The connecting cylindrical section may be attached via three spaced legs or members. However, the pedestal optical substrate can be manufactured from a solid piece of material to form a monolith, thus avoiding joints between the sections, or the disk-like base can be formed separately and connected to the connecting section. By way of example, the pedestal optical substrate may be utilized in the fabrication of optics for an extreme ultraviolet (EUV) lithography imaging system, or in any optical system requiring coated optics and substrates with reduced sensitivity to mechanical mounts.

  2. All-optical switching in optically induced nonlinear waveguide couplers

    SciTech Connect (OSTI)

    Diebel, Falko Boguslawski, Martin; Rose, Patrick; Denz, Cornelia; Leykam, Daniel; Desyatnikov, Anton S.

    2014-06-30

    We experimentally demonstrate all-optical vortex switching in nonlinear coupled waveguide arrays optically induced in photorefractive media. Our technique is based on multiplexing of nondiffracting Bessel beams to induce various types of waveguide configurations. Using double- and quadruple-well potentials, we demonstrate precise control over the coupling strength between waveguides, the linear and nonlinear dynamics and symmetry-breaking bifurcations of guided light, and a power-controlled optical vortex switch.

  3. p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient

    SciTech Connect (OSTI)

    Kumar Pandey, Sushil; Kumar Pandey, Saurabh; Awasthi, Vishnu; Kumar, Ashish; Mukherjee, Shaibal; Deshpande, Uday P.; Gupta, Mukul

    2013-10-28

    Sb-doped ZnO (SZO) thin films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system in the absence of oxygen ambient. The electrical, structural, morphological, and elemental properties of SZO thin films were studied for films grown at different substrate temperatures ranging from 200 C to 600 C and then annealed in situ at 800 C under vacuum (pressure ?5 10{sup ?8} mbar). Films grown for temperature range of 200500 C showed p-type conduction with hole concentration of 1.374 10{sup 16} to 5.538 10{sup 16} cm{sup ?3}, resistivity of 66.73312.758 ? cm, and carrier mobility of 4.9648.846 cm{sup 2} V{sup ?1} s{sup ?1} at room temperature. However, the film grown at 600 C showed n-type behavior. Additionally, current-voltage (IV) characteristic of p-ZnO/n-Si heterojunction showed a diode-like behavior, and that further confirmed the p-type conduction in ZnO by Sb doping. X-ray diffraction measurements showed that all SZO films had (002) preferred crystal orientation. X-ray photoelectron spectroscopy analysis confirmed the formation of Sb{sub Zn}2V{sub Zn} complex caused acceptor-like behavior in SZO films.

  4. Electroforming of Bi(1-x)Sb(x) nanowires for high-efficiency micro-thermoelectric cooling devices on a chip.

    SciTech Connect (OSTI)

    Overmyer, Donald L.; Webb, Edmund Blackburn, III; Siegal, Michael P.; Yelton, William Graham

    2006-11-01

    Active cooling of electronic systems for space-based and terrestrial National Security missions has demanded use of Stirling, reverse-Brayton, closed Joule-Thompson, pulse tube and more elaborate refrigeration cycles. Such cryocoolers are large systems that are expensive, demand large powers, often contain moving parts and are difficult to integrate with electronic systems. On-chip, solid-state, active cooling would greatly enhance the capabilities of future systems by reducing the size, cost and inefficiencies compared to existing solutions. We proposed to develop the technology for a thermoelectric cooler capable of reaching 77K by replacing bulk thermoelectric materials with arrays of Bi{sub 1-x}Sb{sub x} nanowires. Furthermore, the Sandia-developed technique we will use to produce the oriented nanowires occurs at room temperature and can be applied directly to a silicon substrate. Key obstacles include (1) optimizing the Bi{sub 1-x}Sb{sub x} alloy composition for thermoelectric properties; (2) increasing wire aspect ratios to 3000:1; and (3) increasing the array density to {ge} 10{sup 9} wires/cm{sup 2}. The primary objective of this LDRD was to fabricate and test the thermoelectric properties of arrays of Bi{sub 1-x}Sb{sub x} nanowires. With this proof-of-concept data under our belts we are positioned to engage National Security systems customers to invest in the integration of on-chip thermoelectric coolers for future missions.

  5. Fiber optic geophysical sensors

    DOE Patents [OSTI]

    Homuth, E.F.

    1991-03-19

    A fiber optic geophysical sensor is described in which laser light is passed through a sensor interferometer in contact with a geophysical event, and a reference interferometer not in contact with the geophysical event but in the same general environment as the sensor interferometer. In one embodiment, a single tunable laser provides the laser light. In another embodiment, separate tunable lasers are used for the sensor and reference interferometers. The invention can find such uses as monitoring for earthquakes, and the weighing of objects. 2 figures.

  6. Integrated optical XY coupler

    DOE Patents [OSTI]

    Vawter, G. Allen (Albuquerque, NM); Hadley, G. Ronald (Albuquerque, NM)

    1997-01-01

    An integrated optical XY coupler having two converging input waveguide arms meeting in a central section and a central output waveguide arm and two diverging flanking output waveguide arms emanating from the central section. In-phase light from the input arms constructively interfers in the central section to produce a single mode output in the central output arm with the rest of the light being collected in the flanking output arms. Crosstalk between devices on a substrate is minimized by this collection of the out-of-phase light by the flanking output arms of the XY coupler.

  7. Integrated optical XY coupler

    DOE Patents [OSTI]

    Vawter, G.A.; Hadley, G.R.

    1997-05-06

    An integrated optical XY coupler having two converging input waveguide arms meeting in a central section and a central output waveguide arm and two diverging flanking output waveguide arms emanating from the central section. In-phase light from the input arms constructively interferes in the central section to produce a single mode output in the central output arm with the rest of the light being collected in the flanking output arms. Crosstalk between devices on a substrate is minimized by this collection of the out-of-phase light by the flanking output arms of the XY coupler. 9 figs.

  8. Ferroelectric optical image comparator

    DOE Patents [OSTI]

    Butler, Michael A. (Albuquerque, NM); Land, Cecil E. (Albuquerque, NM); Martin, Stephen J. (Albuquerque, NM); Pfeifer, Kent B. (Los Lunas, NM)

    1993-01-01

    A ferroelectric optical image comparator has a lead lanthanum zirconate titanate thin-film device which is constructed with a semi-transparent or transparent conductive first electrode on one side of the thin film, a conductive metal second electrode on the other side of the thin film, and the second electrode is in contact with a nonconducting substrate. A photoinduced current in the device represents the dot product between a stored image and an image projected onto the first electrode. One-dimensional autocorrelations are performed by measuring this current while displacing the projected image.

  9. Nonimaging Optical Illumination System

    DOE Patents [OSTI]

    Winston, Roland (Chicago, IL)

    1994-08-02

    A nonimaging illumination optical device for producing selected intensity output over an angular range. The device includes a light reflecting surface (24, 26) around a light source (22) which is disposed opposite the aperture opening of the light reflecting surface (24, 26). The light source (22) has a characteristic dimension which is small relative to one or more of the distance from the light source (22) to the light reflecting surface (24, 26) or the angle subtended by the light source (22) at the light reflecting surface (24, 26).

  10. Optical humidity sensor

    DOE Patents [OSTI]

    Tarvin, J.A.

    1987-02-10

    An optical dielectric humidity sensor is disclosed which includes a dielectric mirror having multiple alternating layers of two porous water-adsorbent dielectric materials with differing indices of refraction carried by a translucent substrate. A narrow-band polarized light source is positioned to direct light energy onto the mirror, and detectors are positioned to receive light energy transmitted through and reflected by the mirror. A ratiometer indicates humidity in the atmosphere which surrounds the dielectric mirror as a function of a ratio of light energies incident on the detectors. 2 figs.

  11. Ferroelectric optical image comparator

    DOE Patents [OSTI]

    Butler, M.A.; Land, C.E.; Martin, S.J.; Pfeifer, K.B.

    1993-11-30

    A ferroelectric optical image comparator has a lead lanthanum zirconate titanate thin-film device which is constructed with a semi-transparent or transparent conductive first electrode on one side of the thin film, a conductive metal second electrode on the other side of the thin film, and the second electrode is in contact with a nonconducting substrate. A photoinduced current in the device represents the dot product between a stored image and an image projected onto the first electrode. One-dimensional autocorrelations are performed by measuring this current while displacing the projected image. 7 figures.

  12. Nonlinear optical coupler using a doped optical waveguide

    DOE Patents [OSTI]

    Pantell, Richard H. (Menlo Park, CA); Sadowski, Robert W. (Stanford, CA); Digonnet, Michel J. F. (Palo Alto, CA); Shaw, Herbert J. (Stanford, CA)

    1994-01-01

    An optical mode coupling apparatus includes an Erbium-doped optical waveguide in which an optical signal at a signal wavelength propagates in a first spatial propagation mode and a second spatial propagation mode of the waveguide. The optical signal propagating in the waveguide has a beat length. The coupling apparatus includes a pump source of perturbational light signal at a perturbational wavelength that propagates in the waveguide in the first spatial propagation mode. The perturbational signal has a sufficient intensity distribution in the waveguide that it causes a perturbation of the effective refractive index of the first spatial propagation mode of the waveguide in accordance with the optical Kerr effect. The perturbation of the effective refractive index of the first spatial propagation mode of the optical waveguide causes a change in the differential phase delay in the optical signal propagating in the first and second spatial propagation modes. The change in the differential phase delay is detected as a change in the intensity distribution between two lobes of the optical intensity distribution pattern of an output signal. The perturbational light signal can be selectively enabled and disabled to selectively change the intensity distribution in the two lobes of the optical intensity distribution pattern.

  13. Method for optical and mechanically coupling optical fibers

    DOE Patents [OSTI]

    Toeppen, J.S.

    1996-10-01

    A method and apparatus are disclosed for splicing optical fibers. A fluorescing solder glass frit having a melting point lower than the melting point of first and second optical fibers is prepared. The solder glass frit is then attached to the end of the first optical fiber and/or the end of the second optical fiber. The ends of the optical fibers are aligned and placed in close proximity to each other. The solder glass frit is then heated to a temperature which is lower than the melting temperature of the first and second optical fibers, but which is high enough to melt the solder glass frit. A force is applied to the first and second optical fibers pushing the ends of the fibers towards each other. As the solder glass flit becomes molten, the layer of molten solder glass is compressed into a thin layer between the first and second optical fibers. The thin compressed layer of molten solder glass is allowed to cool such that the first and second optical fibers are bonded to each other by the hardened layer of solder glass. 6 figs.

  14. Method for optical and mechanically coupling optical fibers

    DOE Patents [OSTI]

    Toeppen, John S. (Livermore, CA)

    1996-01-01

    A method and apparatus for splicing optical fibers. A fluorescing solder glass frit having a melting point lower than the melting point of first and second optical fibers is prepared. The solder glass frit is then attached to the end of the first optical fiber and/or the end of the second optical fiber. The ends of the optical fibers are aligned and placed in close proximity to each other. The solder glass frit is then heated to a temperature which is lower than the melting temperature of the first and second optical fibers, but which is high enough to melt the solder glass frit. A force is applied to the first and second optical fibers pushing the ends of the fibers towards each other. As the solder glass flit becomes molten, the layer of molten solder glass is compressed into a thin layer between the first and second optical fibers. The thin compressed layer of molten solder glass is allowed to cool such that the first and second optical fibers are bonded to each other by the hardened layer of solder glass.

  15. Optical oxygen concentration monitor

    DOE Patents [OSTI]

    Kebabian, Paul (Acton, MA)

    1997-01-01

    A system for measuring and monitoring the concentration of oxygen uses as a light source an argon discharge lamp, which inherently emits light with a spectral line that is close to one of oxygen's A-band absorption lines. In a preferred embodiment, the argon line is split into sets of components of shorter and longer wavelengths by a magnetic field of approximately 2000 Gauss that is parallel to the light propagation from the lamp. The longer wavelength components are centered on an absorption line of oxygen and thus readily absorbed, and the shorter wavelength components are moved away from that line and minimally absorbed. A polarization modulator alternately selects the set of the longer wavelength, or upshifted, components or the set of the shorter wavelength, or downshifted, components and passes the selected set to an environment of interest. After transmission over a path through that environment, the transmitted optical flux of the argon line varies as a result of the differential absorption. The system then determines the concentration of oxygen in the environment based on the changes in the transmitted optical flux between the two sets of components. In alternative embodiments modulation is achieved by selectively reversing the polarity of the magnetic field or by selectively supplying the magnetic field to either the emitting plasma of the lamp or the environment of interest.

  16. Optical oxygen concentration monitor

    DOE Patents [OSTI]

    Kebabian, P.

    1997-07-22

    A system for measuring and monitoring the concentration of oxygen uses as a light source an argon discharge lamp, which inherently emits light with a spectral line that is close to one of oxygen`s A-band absorption lines. In a preferred embodiment, the argon line is split into sets of components of shorter and longer wavelengths by a magnetic field of approximately 2,000 Gauss that is parallel to the light propagation from the lamp. The longer wavelength components are centered on an absorption line of oxygen and thus readily absorbed, and the shorter wavelength components are moved away from that line and minimally absorbed. A polarization modulator alternately selects the set of the longer wavelength, or upshifted, components or the set of the shorter wavelength, or downshifted, components and passes the selected set to an environment of interest. After transmission over a path through that environment, the transmitted optical flux of the argon line varies as a result of the differential absorption. The system then determines the concentration of oxygen in the environment based on the changes in the transmitted optical flux between the two sets of components. In alternative embodiments modulation is achieved by selectively reversing the polarity of the magnetic field or by selectively supplying the magnetic field to either the emitting plasma of the lamp or the environment of interest. 4 figs.

  17. Optical transcutaneous bilirubin detector

    DOE Patents [OSTI]

    Kronberg, J.W.

    1993-11-09

    A transcutaneous bilirubin detector is designed comprising a source of light having spectral components absorbable and not absorbable by bilirubin, a handle assembly, electronic circuitry and a fiber optic bundle connecting the assembly to the light source and circuitry. Inside the assembly is a prism that receives the light from one end of the fiber optic bundle and directs it onto the skin and directs the reflected light back into the bundle. The other end of the bundle is trifucated, with one end going to the light source and the other two ends going to circuitry that determines how much light of each kind has been reflected. A relatively greater amount absorbed by the skin from the portion of the spectrum absorbable by bilirubin may indicate the presence of the illness. Preferably, two measurements are made, one on the kneecap and one on the forehead, and compared to determine the presence of bilirubin. To reduce the impact of light absorption by hemoglobin in the blood carried by the skin, pressure is applied with a plunger and spring in the handle assembly, the pressure limited by points of a button slidably carried in the assembly that are perceived by touch when the pressure applied is sufficient. 6 figures.

  18. Optical transcutaneous bilirubin detector

    DOE Patents [OSTI]

    Kronberg, James W. (108 Independent Blvd., Aiken, SC 29801)

    1993-01-01

    A transcutaneous bilirubin detector comprising a source of light having spectral components absorbable and not absorbable by bilirubin, a handle assembly, electronic circuitry and a fiber optic bundle connecting the assembly to the light source and circuitry. Inside the assembly is a prism that receives the light from one end of the fiber optic bundle and directs it onto the skin and directs the reflected light back into the bundle. The other end of the bundle is trifucated, with one end going to the light source and the other two ends going to circuitry that determines how much light of each kind has been reflected. A relatively greater amount absorbed by the skin from the portion of the spectrum absorbable by bilirubin may indicate the presence of the illness. Preferably, two measurements are made, one on the kneecap and one on the forehead, and compared to determine the presence of bilirubin. To reduce the impact of light absorption by hemoglobin in the blood carried by the skin, pressure is applied with a plunger and spring in the handle assembly, the pressure limited by points of a button slidably carried in the assembly that are perceived by touch when the pressure applied is sufficient.

  19. Tapered capillary optics

    DOE Patents [OSTI]

    Hirsch, Gregory (365 Talbot Ave., Pacifica, CA 94044)

    1998-01-01

    A metal or glass wire is etched with great precision into a very narrowly tapering cone which has the shape of the desired final capillary-optics bore. By controlling the rate of removal of the wire from an etchant bath, a carefully controlled taper is produced. A sensor measures the diameter of the wire as it leaves the surface of the etchant. This signal is used for feedback control of the withdrawal speed. The etched wire undergoes a treatment to produce an extremely low surface-roughness. The etched and smoothed wire is coated with the material of choice for optimizing the reflectivity of the radiation being focused. This could be a vacuum evaporation, sputtering, CVD or aqueous chemical process. The coated wire is either electroplated, built up with electroless plating, or encapsulated in a polymer cylinder such as epoxy to increase the diameter of the wire for easier handling and greater robustness. During this process, the wire is vertically oriented and tensioned to assure that the wire is absolutely straight. The coated and electroformed wire is bonded to a flat, rigid substrate and is then periodically segmented by cutting or etching a series of narrow slits or grooves into the wire. The wire is vertically oriented and tensioned during the bonding process to assure that it is straight. The original wire material is then chemically etched away through the slits or otherwise withdrawn to leave the hollow internal bore of the final tapered-capillary optical element.

  20. Bundled monocapillary optics

    DOE Patents [OSTI]

    Hirsch, Gregory (1277 Linds Mar Center, Suite 128, Pacifica, CA 94044)

    2002-01-01

    A plurality of glass or metal wires are precisely etched to form the desired shape of the individual channels of the final polycapillary optic. This shape is created by carefully controlling the withdrawal speed of a group of wires from an etchant bath. The etched wires undergo a subsequent operation to create an extremely smooth surface. This surface is coated with a layer of material which is selected to maximize the reflectivity of the radiation being used. This reflective surface may be a single layer of material, or a multilayer coating for optimizing the reflectivity in a narrower wavelength interval. The collection of individual wires is assembled into a close-packed multi-wire bundle, and the wires are bonded together in a manner which preserves the close-pack configuration, irrespective of the local wire diameter. The initial wires are then removed by either a chemical etching procedure or mechanical force. In the case of chemical etching, the bundle is generally segmented by cutting a series of etching slots. Prior to removing the wire, the capillary array is typically bonded to a support substrate. The result of the process is a bundle of precisely oriented radiation-reflecting hollow channels. The capillary optic is used for efficiently collecting and redirecting the radiation from a source of radiation which could be the anode of an x-ray tube, a plasma source, the fluorescent radiation from an electron microprobe, a synchrotron radiation source, a reactor or spallation source of neutrons, or some other source.

  1. Optical transcutaneous bilirubin detector

    DOE Patents [OSTI]

    Kronberg, J.W.

    1991-03-04

    This invention consists of a transcutaneous bilirubin detector comprising a source of light having spectral components absorbable and not absorbable by bilirubin, a handle assembly, electronic circuitry and a fiber optic bundle connecting the assembly to the light source and circuitry. Inside the assembly is a prism that receives the light from one end of the fiber optic bundle and directs it onto the skin and directs the reflected light back into the bundle. The other end of the bundle is trifucated, with one end going to the light source and the other two ends going to circuitry that determines how much light of each kind has been reflected. A relatively greater amount absorbed by the skin from the portion of the spectrum absorbable by bilirubin may indicate the presence of the illness. Preferably, two measurements are made, one on the kneecap and one on the forehead, and compared to determine the presence of bilirubin. To reduce the impact of light absorption by hemoglobin in the blood carried by the skin, pressure is applied with a plunger and spring in the handle assembly, the pressure limited by points of a button slidably carried in the assembly that are perceived by touch when the pressure applied is sufficient.

  2. System for testing optical fibers

    DOE Patents [OSTI]

    Golob, John E. [Olathe, KS; Looney, Larry D. [Los Alamos, NM; Lyons, Peter B. [Los Alamos, NM; Nelson, Melvin A. [Santa Barbara, CA; Davies, Terence J. [Santa Barbara, CA

    1980-07-15

    A system for measuring a combination of optical transmission properties of fiber optic waveguides. A polarized light pulse probe is injected into one end of the optical fiber. Reflections from discontinuities within the fiber are unpolarized whereas reflections of the probe pulse incident to its injection remain polarized. The polarized reflections are prevented from reaching a light detector whereas reflections from the discontinuities reaches the detector.

  3. Spatial optic multiplexer/diplexer

    DOE Patents [OSTI]

    Tremblay, Paul L. (Idaho Falls, ID)

    1991-01-01

    An apparatus for simultaneous transmission of optic signals having different wavelengths over a single optic fiber. Multiple light signals are transmitted through optic fibers that are formed into a circumference surrounding a central core fiber. The multiple light signals are directed by a lens into a single receiving fiber where the light combines and is then focused into the central core fiber which transmits the light to a wavelength discriminating receiver assembly.

  4. Resistivity During Boiling in the SB-15-D Core from the Geysers Geothermal Field: The Effects of Capillarity

    SciTech Connect (OSTI)

    Roberts, J.; Duba, A.; Bonner, B.; Kasameyer, P.

    1997-01-01

    In a laboratory study of cores from borehole SB-15-D in The Geysers geothermal area, we measured the electrical resistivity of metashale with and without pore-pressure control, with confining pressures up to 100 bars and temperatures between 20 and 150 C, to determine how the pore-size distribution and capillarity affected boiling. We observed a gradual increase in resistivity when the downstream pore pressure or confining pressure decreased below the phase boundary of free water. For the conditions of this experiment, boiling, as indicated by an increase in resistivity, is initiated at pore pressures of approximately 0.5 to 1 bar (0.05 to 0.1 MPa) below the free-water boiling curve, and it continues to increase gradually as pressure is lowered to atmospheric. A simple model of the effects of capillarity suggests that at 145 C, less than 15% of the pore water can boil in these rocks. If subsequent experiments bear out these preliminary observations, then boiling within a geothermal reservoir is controlled not just by pressure and temperature but also by pore-size distribution. Thus, it may be possible to determine reservoir characteristics by monitoring changes in electrical resistivity as reservoir conditions change.

  5. Low noise optical position sensor

    DOE Patents [OSTI]

    Spear, Jonathan David (Berkeley, CA)

    1999-01-01

    A novel optical position sensor is described that uses two component photodiodes electrically connected in parallel, with opposing polarities. A lens provides optical gain and restricts the acceptance angle of the detector. The response of the device to displacements of an optical spot is similar to that of a conventional bi-cell type position sensitive detector. However, the component photodiode design enables simpler electronic amplification with inherently less electrical noise than the bi-cell. Measurements by the sensor of the pointing noise of a focused helium-neon laser as a function of frequency demonstrate high sensitivity and suitability for optical probe beam deflection experiments.

  6. Optically stimulated differential impedance spectroscopy

    DOE Patents [OSTI]

    Maxey, Lonnie C; Parks, II, James E; Lewis, Sr., Samuel A; Partridge, Jr., William P

    2014-02-18

    Methods and apparatuses for evaluating a material are described. Embodiments typically involve use of an impedance measurement sensor to measure the impedance of a sample of the material under at least two different states of illumination. The states of illumination may include (a) substantially no optical stimulation, (b) substantial optical stimulation, (c) optical stimulation at a first wavelength of light, (d) optical stimulation at a second wavelength of light, (e) a first level of light intensity, and (f) a second level of light intensity. Typically a difference in impedance between the impedance of the sample at the two states of illumination is measured to determine a characteristic of the material.

  7. Fiber optic diffraction grating maker

    DOE Patents [OSTI]

    Deason, V.A.; Ward, M.B.

    1991-05-21

    A compact and portable diffraction grating maker is comprised of a laser beam, optical and fiber optics devices coupling the beam to one or more evanescent beam splitters, and collimating lenses or mirrors directing the split beam at an appropriate photosensitive material. The collimating optics, the output ends of the fiber optic coupler and the photosensitive plate holder are all mounted on an articulated framework so that the angle of intersection of the beams can be altered at will without disturbing the spatial filter, collimation or beam quality, and assuring that the beams will always intersect at the position of the plate. 4 figures.

  8. Fiber optic diffraction grating maker

    DOE Patents [OSTI]

    Deason, Vance A. (Idaho Falls, ID); Ward, Michael B. (Idaho Falls, ID)

    1991-01-01

    A compact and portable diffraction grating maker comprised of a laser beam, optical and fiber optics devices coupling the beam to one or more evanescent beam splitters, and collimating lenses or mirrors directing the split beam at an appropriate photosensitive material. The collimating optics, the output ends of the fiber optic coupler and the photosensitive plate holder are all mounted on an articulated framework so that the angle of intersection of the beams can be altered at will without disturbing the spatial filter, collimation or beam quality, and assuring that the beams will always intersect at the position of the plate.

  9. Low noise optical position sensor

    DOE Patents [OSTI]

    Spear, J.D.

    1999-03-09

    A novel optical position sensor is described that uses two component photodiodes electrically connected in parallel, with opposing polarities. A lens provides optical gain and restricts the acceptance angle of the detector. The response of the device to displacements of an optical spot is similar to that of a conventional bi-cell type position sensitive detector. However, the component photodiode design enables simpler electronic amplification with inherently less electrical noise than the bi-cell. Measurements by the sensor of the pointing noise of a focused helium-neon laser as a function of frequency demonstrate high sensitivity and suitability for optical probe beam deflection experiments. 14 figs.

  10. Sandia Energy - Sensors & Optical Diagnostics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    & Optical Diagnostics Home CRF Permalink Gallery CRF Article Chosen by The Journal of Chemical Physics to Commemorate 80th Anniversary CRF, Energy, Facilities, News, News & Events,...

  11. Optical cavity furnace for semiconductor wafer processing

    DOE Patents [OSTI]

    Sopori, Bhushan L.

    2014-08-05

    An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

  12. Multilayer optical dielectric coating

    DOE Patents [OSTI]

    Emmett, John L. (Pleasanton, CA)

    1990-01-01

    A highly damage resistant, multilayer, optical reflective coating includes alternating layers of doped and undoped dielectric material. The doping levels are low enough that there are no distinct interfaces between the doped and undoped layers so that the coating has properties nearly identical to the undoped material. The coating is fabricated at high temperature with plasma-assisted chemical vapor deposition techniques to eliminate defects, reduce energy-absorption sites, and maintain proper chemical stoichiometry. A number of differently-doped layer pairs, each layer having a thickness equal to one-quarter of a predetermined wavelength in the material are combined to form a narrowband reflective coating for a predetermined wavelength. Broadband reflectors are made by using a number of narrowband reflectors, each covering a portion of the broadband.

  13. Integrated optical sensor

    DOE Patents [OSTI]

    Watkins, A.D.; Smartt, H.B.; Taylor, P.L.

    1994-01-04

    An integrated optical sensor for arc welding having multifunction feedback control is described. The sensor, comprising generally a CCD camera and diode laser, is positioned behind the arc torch for measuring weld pool position and width, standoff distance, and post-weld centerline cooling rate. Computer process information from this sensor is passed to a controlling computer for use in feedback control loops to aid in the control of the welding process. Weld pool position and width are used in a feedback loop, by the weld controller, to track the weld pool relative to the weld joint. Sensor standoff distance is used in a feedback loop to control the contact tip to base metal distance during the welding process. Cooling rate information is used to determine the final metallurgical state of the weld bead and heat affected zone, thereby controlling post-weld mechanical properties. 6 figures.

  14. Integrated optical sensor

    DOE Patents [OSTI]

    Watkins, Arthur D. (Idaho Falls, ID); Smartt, Herschel B. (Idaho Falls, ID); Taylor, Paul L. (Idaho Falls, ID)

    1994-01-01

    An integrated optical sensor for arc welding having multifunction feedback control. The sensor, comprising generally a CCD camera and diode laser, is positioned behind the arc torch for measuring weld pool position and width, standoff distance, and post-weld centerline cooling rate. Computer process information from this sensor is passed to a controlling computer for use in feedback control loops to aid in the control of the welding process. Weld pool position and width are used in a feedback loop, by the weld controller, to track the weld pool relative to the weld joint. Sensor standoff distance is used in a feedback loop to control the contact tip to base metal distance during the welding process. Cooling rate information is used to determine the final metallurgical state of the weld bead and heat affected zone, thereby controlling post-weld mechanical properties.

  15. Fluorescent optical position sensor

    DOE Patents [OSTI]

    Weiss, Jonathan D.

    2005-11-15

    A fluorescent optical position sensor and method of operation. A small excitation source side-pumps a localized region of fluorescence at an unknown position along a fluorescent waveguide. As the fluorescent light travels down the waveguide, the intensity of fluorescent light decreases due to absorption. By measuring with one (or two) photodetectors the attenuated intensity of fluorescent light emitted from one (or both) ends of the waveguide, the position of the excitation source relative to the waveguide can be determined by comparing the measured light intensity to a calibrated response curve or mathematical model. Alternatively, excitation light can be pumped into an end of the waveguide, which generates an exponentially-decaying continuous source of fluorescent light along the length of the waveguide. The position of a photodetector oriented to view the side of the waveguide can be uniquely determined by measuring the intensity of the fluorescent light emitted radially at that location.

  16. Monolithic fiber optic sensor assembly

    DOE Patents [OSTI]

    Sanders, Scott

    2015-02-10

    A remote sensor element for spectrographic measurements employs a monolithic assembly of one or two fiber optics to two optical elements separated by a supporting structure to allow the flow of gases or particulates therebetween. In a preferred embodiment, the sensor element components are fused ceramic to resist high temperatures and failure from large temperature changes.

  17. Semiconductor-based optical refrigerator

    DOE Patents [OSTI]

    Epstein, Richard I. (Santa Fe, NM); Edwards, Bradley C. (Nekoosa, WI); Sheik-Bahae, Mansoor (Albuquerque, NM)

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  18. Bi-stable optical actuator

    DOE Patents [OSTI]

    Holdener, Fred R. (Tracy, CA); Boyd, Robert D. (Livermore, CA)

    2000-01-01

    The present invention is a bi-stable optical actuator device that is depowered in both stable positions. A bearing is used to transfer motion and smoothly transition from one state to another. The optical actuator device may be maintained in a stable position either by gravity or a restraining device.

  19. Miniature mechanical transfer optical coupler

    DOE Patents [OSTI]

    Abel, Philip (Overland Park, KS); Watterson, Carl (Kansas City, MO)

    2011-02-15

    A miniature mechanical transfer (MT) optical coupler ("MMTOC") for optically connecting a first plurality of optical fibers with at least one other plurality of optical fibers. The MMTOC may comprise a beam splitting element, a plurality of collimating lenses, and a plurality of alignment elements. The MMTOC may optically couple a first plurality of fibers disposed in a plurality of ferrules of a first MT connector with a second plurality of fibers disposed in a plurality of ferrules of a second MT connector and a third plurality of fibers disposed in a plurality of ferrules of a third MT connector. The beam splitting element may allow a portion of each beam of light from the first plurality of fibers to pass through to the second plurality of fibers and simultaneously reflect another portion of each beam of light from the first plurality of fibers to the third plurality of fibers.

  20. Optical set-reset latch

    DOE Patents [OSTI]

    Skogen, Erik J.

    2013-01-29

    An optical set-reset (SR) latch is formed from a first electroabsorption modulator (EAM), a second EAM and a waveguide photodetector (PD) which are arranged in an optical and electrical feedback loop which controls the transmission of light through the first EAM to latch the first EAM in a light-transmissive state in response to a Set light input. A second waveguide PD controls the transmission of light through the second EAM and is used to switch the first EAM to a light-absorptive state in response to a Reset light input provided to the second waveguide PD. The optical SR latch, which may be formed on a III-V compound semiconductor substrate (e.g. an InP or a GaAs substrate) as a photonic integrated circuit (PIC), stores a bit of optical information and has an optical output for the logic state of that bit of information.

  1. The role of lanthanides in optical materials

    SciTech Connect (OSTI)

    Weber, M.J.

    1995-05-01

    A survey is presented of the use of the lanthanides as chemical components in transmitting optical materials and as activators in materials for luminescent, electro-optic, magneto-optic, and various photosensitive applications.

  2. Polyhedral integrated and free space optical interconnection

    DOE Patents [OSTI]

    Erteza, Ireena A. (913 McDuffie Cir., NE., Albuquerque, NM 87110)

    1998-01-01

    An optical communication system uses holographic optical elements to provide guided wave and non-guided communication, resulting in high bandwidth, high connectivity optical communications. Holograms within holographic optical elements route optical signals between elements and between nodes connected to elements. Angular and wavelength multiplexing allow the elements to provide high connectivity. The combination of guided and non-guided communication allows compact polyhedral system geometries. Guided wave communications provided by multiplexed substrate-mode holographic optical elements eases system alignment.

  3. Polyhedral integrated and free space optical interconnection

    DOE Patents [OSTI]

    Erteza, I.A.

    1998-01-06

    An optical communication system uses holographic optical elements to provide guided wave and non-guided communication, resulting in high bandwidth, high connectivity optical communications. Holograms within holographic optical elements route optical signals between elements and between nodes connected to elements. Angular and wavelength multiplexing allow the elements to provide high connectivity. The combination of guided and non-guided communication allows compact polyhedral system geometries. Guided wave communications provided by multiplexed substrate-mode holographic optical elements eases system alignment. 7 figs.

  4. Power inverter with optical isolation

    DOE Patents [OSTI]

    Duncan, Paul G.; Schroeder, John Alan

    2005-12-06

    An optically isolated power electronic power conversion circuit that includes an input electrical power source, a heat pipe, a power electronic switch or plurality of interconnected power electronic switches, a mechanism for connecting the switch to the input power source, a mechanism for connecting comprising an interconnecting cable and/or bus bar or plurality of interconnecting cables and/or input bus bars, an optically isolated drive circuit connected to the switch, a heat sink assembly upon which the power electronic switch or switches is mounted, an output load, a mechanism for connecting the switch to the output load, the mechanism for connecting including an interconnecting cable and/or bus bar or plurality of interconnecting cables and/or output bus bars, at least one a fiber optic temperature sensor mounted on the heat sink assembly, at least one fiber optic current sensor mounted on the load interconnection cable and/or output bus bar, at least one fiber optic voltage sensor mounted on the load interconnection cable and/or output bus bar, at least one fiber optic current sensor mounted on the input power interconnection cable and/or input bus bar, and at least one fiber optic voltage sensor mounted on the input power interconnection cable and/or input bus bar.

  5. Optically Directed Assembly of Continuous Mesoscale Filaments...

    Office of Scientific and Technical Information (OSTI)

    Optically Directed Assembly of Continuous Mesoscale Filaments Title: Optically Directed Assembly of Continuous Mesoscale Filaments Authors: Bahns, J. T. ; Sankaranarayanan, S. K. ...

  6. Metasurface optical antireflection coating (Journal Article)...

    Office of Scientific and Technical Information (OSTI)

    at the boundary of two different media is one of the fundamental phenomena in optics, and reduction of reflection is highly desirable in many optical systems....

  7. Chameleon Optics Inc | Open Energy Information

    Open Energy Info (EERE)

    Chameleon Optics Inc Jump to: navigation, search Name: Chameleon Optics Inc Place: Philadelphia, Pennsylvania Zip: PA 19104 Sector: Wind energy Product: Has invented low-cost,...

  8. Metamaterial flexible sheets could transform optics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Metamaterial flexible sheets could transform optics Metamaterial flexible sheets could transform optics Advances would boost security screening systems, infrared thermal cameras,...

  9. Funding Opportunity Announcement: CSP: Concentrating Optics for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    CSP: Concentrating Optics for Lower Levelized Energy Costs (COLLECTS) Funding Opportunity Announcement: CSP: Concentrating Optics for Lower Levelized Energy Costs (COLLECTS)...

  10. Metasurface optical antireflection coating (Journal Article)...

    Office of Scientific and Technical Information (OSTI)

    Search Title: Metasurface optical antireflection coating Light reflection at the boundary of two different media is one of the fundamental phenomena in optics, and...

  11. Fiber optic temperature sensor

    SciTech Connect (OSTI)

    Rabold, D.

    1995-12-01

    Our fiber optic temperature measurement sensor and system is a major improvement over methods currently in use in most industrial processes, and it delivers all of the attributes required simplicity, accuracy, and cost efficiency-to help improve all of these processes. Because temperature is a basic physical attribute of nearly every industrial and commercial process, our system can eventually result in significant improvements in nearly every industrial and commercial process. Many finished goods, and the materials that go into them, are critically dependent on the temperature. The better the temperature measurement, the better quality the goods will be and the more economically they can be produced. The production and transmission of energy requires the monitoring of temperature in motors, circuit breakers, power generating plants, and transmission line equipment. The more reliable and robust the methods for measuring these temperature, the more available, stable, and affordable the supply of energy will become. The world is increasingly realizing the threats to health and safety of toxic or otherwise undesirable by products of the industrial economy in the environment. Cleanup of such contamination often depends on techniques that require the constant monitoring of temperature in extremely hazardous environments, which can damage most conventional temperature sensors and which are dangerous for operating personnel. Our system makes such monitoring safer and more economical.

  12. Optical sedimentation recorder

    DOE Patents [OSTI]

    Bishop, James K.B.

    2014-05-06

    A robotic optical sedimentation recorder is described for the recordation of carbon flux in the oceans wherein both POC and PIC particles are captured at the open end of a submersible sampling platform, the captured particles allowed to drift down onto a collection plate where they can be imaged over time. The particles are imaged using three separate light sources, activated in sequence, one source being a back light, a second source being a side light to provide dark field illumination, and a third source comprising a cross polarized light source to illuminate birefringent particles. The recorder in one embodiment is attached to a buoyancy unit which is capable upon command for bringing the sedimentation recorder to a programmed depth below the ocean surface during recordation mode, and on command returning the unit to the ocean surface for transmission of recorded data and receipt of new instructions. The combined unit is provided with its own power source and is designed to operate autonomously in the ocean for extended periods of time.

  13. Polyplanar optical display electronics

    SciTech Connect (OSTI)

    DeSanto, L.; Biscardi, C.

    1997-07-01

    The Polyplanar Optical Display (POD) is a unique display screen which can be used with any projection source. The prototype ten inch display is two inches thick and has a matte black face which allows for high contrast images. The prototype being developed is a form, fit and functional replacement display for the B-52 aircraft which uses a monochrome ten-inch display. In order to achieve a long lifetime, the new display uses a 100 milliwatt green solid-state laser (10,000 hr. life) at 532 nm as its light source. To produce real-time video, the laser light is being modulated by a Digital Light Processing (DLP{trademark}) chip manufactured by Texas Instruments. In order to use the solid-state laser as the light source and also fit within the constraints of the B-52 display, the Digital Micromirror Device (DMD{trademark}) circuit board is removed from the Texas Instruments DLP light engine assembly. Due to the compact architecture of the projection system within the display chassis, the DMD{trademark} chip is operated remotely from the Texas Instruments circuit board. The authors discuss the operation of the DMD{trademark} divorced from the light engine and the interfacing of the DMD{trademark} board with various video formats (CVBS, Y/C or S-video and RGB) including the format specific to the B-52 aircraft. A brief discussion of the electronics required to drive the laser is also presented.

  14. Optical and magneto-optical studies of martensitic transformation...

    Office of Scientific and Technical Information (OSTI)

    Magneto-optical spectroscopy and spectroscopic ellipsometry were measured in the sample temperature range from 297 to 373 K and photon energy range from 1.2 to 6.5 eV. ...

  15. Optic probe for semiconductor characterization

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO); Hambarian, Artak (Yerevan, AM)

    2008-09-02

    Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

  16. Thin-film optical initiator

    DOE Patents [OSTI]

    Erickson, Kenneth L.

    2001-01-01

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  17. Optical switches and switching methods

    DOE Patents [OSTI]

    Doty, Michael

    2008-03-04

    A device and method for collecting subject responses, particularly during magnetic imaging experiments and testing using a method such as functional MRI. The device comprises a non-metallic input device which is coupled via fiber optic cables to a computer or other data collection device. One or more optical switches transmit the subject's responses. The input device keeps the subject's fingers comfortably aligned with the switches by partially immobilizing the forearm, wrist, and/or hand of the subject. Also a robust nonmetallic switch, particularly for use with the input device and methods for optical switching.

  18. Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions

    SciTech Connect (OSTI)

    Andreev, V. M.; Evstropov, V. V.; Kalinovsky, V. S. Lantratov, V. M.; Khvostikov, V. P.

    2009-05-15

    Dependence of the efficiency of single-junction and multijunction solar cells on the mechanisms of current flow in photoactive p-n junctions, specifically on the form of the dark current-voltage characteristic J-V, has been studied. The resistanceless J-V{sub j} characteristic (with the series resistance disregarded) of a multijunction solar cell has the same shape as the characteristic of a single-junction cell: both feature a set of exponential portions. This made it possible to develop a unified analytical method for calculating the efficiency of singlejunction and multijunction solar cells. The equation relating the efficiency to the photogenerated current at each portion of the J-V{sub j} characteristic is derived. For p-n junctions in GaAs and GaSb, the following characteristics were measured: the dark J-V characteristic, the dependence of the open-circuit voltage on the illumination intensity P-V{sub OC}, and the dependence of the luminescence intensity on the forward current L-J. Calculated dependences of potential efficiency (under idealized condition for equality to unity of external quantum yield) on the photogenerated current for single-junction GaAs and GaSb solar cells and a GaAs/GaSb tandem are plotted. The form of these dependences corresponds to the shape of J-V{sub j} characteristics: there are the diffusion- and recombination-related portions; in some cases, the tunneling-trapping portion is also observed. At low degrees of concentration of solar radiation (C < 10), an appreciable contribution to photogenerated current is made by recombination component. It is an increase in this component in the case of irradiation with 6.78-MeV protons or 1-MeV electrons that brings about a decrease in the efficiency of conversion of unconcentrated solar radiation.

  19. Optical analog-to-digital converter

    DOE Patents [OSTI]

    Vawter, G. Allen (Corrales, NM); Raring, James (Goleta, CA); Skogen, Erik J. (Albuquerque, NM)

    2009-07-21

    An optical analog-to-digital converter (ADC) is disclosed which converts an input optical analog signal to an output optical digital signal at a sampling rate defined by a sampling optical signal. Each bit of the digital representation is separately determined using an optical waveguide interferometer and an optical thresholding element. The interferometer uses the optical analog signal and the sampling optical signal to generate a sinusoidally-varying output signal using cross-phase-modulation (XPM) or a photocurrent generated from the optical analog signal. The sinusoidally-varying output signal is then digitized by the thresholding element, which includes a saturable absorber or at least one semiconductor optical amplifier, to form the optical digital signal which can be output either in parallel or serially.

  20. Direct imaging of crystal structure and defects in metastable Ge{sub 2}Sb{sub 2}Te{sub 5} by quantitative aberration-corrected scanning transmission electron microscopy

    SciTech Connect (OSTI)

    Ross, Ulrich; Lotnyk, Andriy Thelander, Erik; Rauschenbach, Bernd

    2014-03-24

    Knowledge about the atomic structure and vacancy distribution in phase change materials is of foremost importance in order to understand the underlying mechanism of fast reversible phase transformation. In this Letter, by combining state-of-the-art aberration-corrected scanning transmission electron microscopy with image simulations, we are able to map the local atomic structure and composition of a textured metastable Ge{sub 2}Sb{sub 2}Te{sub 5} thin film deposited by pulsed laser deposition with excellent spatial resolution. The atomic-resolution scanning transmission electron microscopy investigations display the heterogeneous defect structure of the Ge{sub 2}Sb{sub 2}Te{sub 5} phase. The obtained results are discussed. Highly oriented Ge{sub 2}Sb{sub 2}Te{sub 5} thin films appear to be a promising approach for further atomic-resolution investigations of the phase change behavior of this material class.

  1. Synthesis and crystal structure of [(C{sub 7}H{sub 10}N){sub 2}]{sup 2+} [Sb{sub 2}Cl{sub 8}]{sup 2-1}

    SciTech Connect (OSTI)

    Guo Yun Zhang Miao; Shen Liang; Jin Yingying; Jin Zhimin

    2010-12-15

    The reaction of 2,6-dimethylpyridine with SbCl{sub 3} and HCl affords the title compound, the structure of which is ascertained by X-ray diffraction. The unit cell consists of one bridged Sb{sub 2}Cl{sub 8}{sup 2-} anion and two 2,6-dimethylpyridinium cations. The trivalent antimony ion is bonded not only directly to chlorine anions, but also is coordinated with chlorine anions by secondary bonds. In the crystal, there exists infinite coordinated chains of [Sb{sub 2}Cl{sub 8}]{sub n}{sup 2n-} anions running along the a axis, which link 2,6-dimethylpyridinium cations by N-H-Cl hydrogen bonds.

  2. Scintillator fiber optic long counter

    DOE Patents [OSTI]

    McCollum, Tom (Sterling, VA); Spector, Garry B. (Fairfax, VA)

    1994-01-01

    A flat response position sensitive neutron detector capable of providing neutron spectroscopic data utilizing scintillator fiber optic filaments embedded in a neutron moderating housing having an open end through which neutrons enter to be detected.

  3. Sandia Energy - Sensors & Optical Diagnostics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sensors & Optical Diagnostics Home Analysis Schematic representation of the experimental set-up. Shown in the figure is the jet-stirred reactor that is located within an oven, all...

  4. Scintillator fiber optic long counter

    DOE Patents [OSTI]

    McCollum, T.; Spector, G.B.

    1994-03-29

    A flat response position sensitive neutron detector capable of providing neutron spectroscopic data utilizing scintillator fiber optic filaments embedded in a neutron moderating housing having an open end through which neutrons enter to be detected is described. 11 figures.

  5. Ion optics of RHIC EBIS

    SciTech Connect (OSTI)

    Pikin, A.; Alessi, J.; Beebe, E.; Kponou, A.; Okamura, M.; Raparia, D.; Ritter, J.; Tan, Y.; Kuznetsov, G.

    2011-09-10

    RHIC EBIS has been commissioned to operate as a versatile ion source on RHIC injection facility supplying ion species from He to Au for Booster. Except for light gaseous elements RHIC EBIS employs ion injection from several external primary ion sources. With electrostatic optics fast switching from one ion species to another can be done on a pulse to pulse mode. The design of an ion optical structure and the results of simulations for different ion species are presented. In the choice of optical elements special attention was paid to spherical aberrations for high-current space charge dominated ion beams. The combination of a gridded lens and a magnet lens in LEBT provides flexibility of optical control for a wide range of ion species to satisfy acceptance parameters of RFQ. The results of ion transmission measurements are presented.

  6. Full particle orbit tracing with RIO

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SB RAS and Novosibirsk State University, 630090, Novosibirsk, Russia E-mail: jareusch@wisc.edu Received 15 November 2013, revised 29 March 2014 Accepted for publication 2 April...

  7. ARM - Measurement - Cloud optical depth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    optical depth ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Measurement : Cloud optical depth Amount of light cloud droplets or ice particles prevent from passing through a column of atmosphere. Categories Cloud Properties Instruments The above measurement is considered scientifically relevant for the following instruments. Refer to the datastream (netcdf) file headers of each instrument for a list of all

  8. Light diffusing fiber optic chamber

    DOE Patents [OSTI]

    Maitland, Duncan J. (Lafayette, CA)

    2002-01-01

    A light diffusion system for transmitting light to a target area. The light is transmitted in a direction from a proximal end to a distal end by an optical fiber. A diffusing chamber is operatively connected to the optical fiber for transmitting the light from the proximal end to the distal end and transmitting said light to said target area. A plug is operatively connected to the diffusing chamber for increasing the light that is transmitted to the target area.

  9. Optics Tuning Knobs for Facet

    SciTech Connect (OSTI)

    Nosochkov, Yuri; Hogan, Mark J.; Wittmer, Walter; /SLAC

    2011-06-02

    FACET is a new facility under construction at the SLAC National Accelerator Laboratory. The FACET beam line is designed to provide 23 GeV tightly focused and compressed electron and positron bunches for beam driven plasma wakefield acceleration research and other experiments. Achieving optimal beam parameters for various experimental conditions requires the optics capability for tuning in a sufficiently wide range. This will be achieved by using optics tuning systems (knobs). Design of such systems for FACET is discussed.

  10. Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells

    SciTech Connect (OSTI)

    Huang, Cheng-Ying Law, Jeremy J. M.; Rodwell, Mark J. W.; Lu, Hong; Gossard, Arthur C.; Jena, Debdeep

    2014-03-28

    We have investigated the growth and electron transport in In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} two dimensional electron gases (2DEG) and compared their properties with In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As 2DEGs. For 10?nm thick InGaAs wells, the electron mobility of InGaAs/AlAsSb 2DEGs is comparable to that of InGaAs/InAlAs 2DEGs. Upon thinning the wells to 3?nm, the 2DEG mobility is degraded quickly and stronger interface roughness scattering is observed for InGaAs/AlAsSb heterointerfaces than for InGaAs/InAlAs heterointerfaces. Changing the group-V exposure between As and Sb during growth interruptions at the InGaAs/AlAsSb interfaces did not significantly change the 2DEG mobility. With the insertion of a two monolayer InAlAs at the InGaAs/AlAsSb interfaces, the interface roughness scattering is reduced and the mobility greatly increased. The room temperature 2DEG mobility shows 66% improvement from 1.63??10{sup 3} cm{sup 2}/Vs to 2.71??10{sup 3}?cm{sup 2}/Vs for a 3?nm InGaAs well.

  11. Kondo Lattice Behavior in the Ordered Dilute Magnetic Semiconductor Yb14-xLaxMnSb11

    SciTech Connect (OSTI)

    Sales, Brian C; Khalifah, Peter; Enck, Thomas P; Nagler, Evan J; Sykora, Richard E; Jin, Rongying; Mandrus, David

    2005-01-01

    We report Hall, magnetic, heat capacity, and doping studies from single crystals of Yb{sub 14}MnSb{sub 11} and Yb{sub 13.3}La{sub 0.7}MnSb{sub 11}. These heavily doped semiconducting compounds are ferromagnetic below 53 and 39 K, respectively. The renormalization of the carrier mass from 2m{sub 3} near room temperature to 20m{sub e} at 5 K, plus the magnetic evidence for partial screening of the Mn magnetic moments suggest that these compounds represent rare examples of an underscreened Kondo lattice with T{sub K} {approx} 285 K.

  12. Hard x-ray photoelectron spectroscopy study of Ge{sub 2}Sb{sub 2}Te{sub 5}; as-deposited amorphous, crystalline, and laser-reamorphized

    SciTech Connect (OSTI)

    Richter, Jan H. Tominaga, Junji; Fons, Paul; Kolobov, Alex V.; Ueda, Shigenori; Yoshikawa, Hideki; Yamashita, Yoshiyuki; Ishimaru, Satoshi; Kobayashi, Keisuke

    2014-02-10

    We have investigated the electronic structure of as-deposited, crystalline, and laser-reamorphized Ge{sub 2}Sb{sub 2}Te{sub 5} using high resolution, hard x-ray photoemission spectroscopy. A shift in the Fermi level as well as a broadening of the spectral features in the valence band and the Ge 3d level between the amorphous and crystalline state is observed. Upon amorphization, Ge 3d and Sb 4d spectra show a surprisingly small breaking of resonant bonds and changes in the bonding character as evidenced by the very similar density of states in all cases.

  13. Fiber optic sensor and method for making

    DOE Patents [OSTI]

    Vartuli, James Scott; Bousman, Kenneth Sherwood; Deng, Kung-Li; McEvoy, Kevin Paul; Xia, Hua

    2010-05-18

    A fiber optic sensor including a fiber having a modified surface integral with the fiber wherein the modified surface includes an open pore network with optical agents dispersed within the open pores of the open pore network. Methods for preparing the fiber optic sensor are also provided. The fiber optic sensors can withstand high temperatures and harsh environments.

  14. Optical feedback structures and methods of making

    DOE Patents [OSTI]

    Snee, Preston T; Chan, Yin Thai; Nocera, Daniel G; Bawendi, Moungi G

    2014-11-18

    An optical resonator can include an optical feedback structure disposed on a substrate, and a composite including a matrix including a chromophore. The composite disposed on the substrate and in optical communication with the optical feedback structure. The chromophore can be a semiconductor nanocrystal. The resonator can provide laser emission when excited.

  15. Optical manufacturing requirements for an AVLIS plant

    SciTech Connect (OSTI)

    Primdahl, K.; Chow, R.; Taylor, J.R.

    1997-07-14

    A uranium enrichment plant utilizing Atomic Vapor Laser Isotope Separation (AVLIS) technology is currently being planned. Deployment of the Plant will require tens of thousands of commercial and custom optical components and subsystems. The Plant optical system will be expected to perform at a high level of optical efficiency and reliability in a high-average-power-laser production environment. During construction, demand for this large number of optics must be coordinated with the manufacturing capacity of the optical industry. The general requirements and approach to ensure supply of optical components is described. Dynamic planning and a closely coupled relationship with the optics industry will be required to control cost, schedule, and quality.

  16. Thermoelectric Properties of P-type Skutterudites YbxFe3.5Ni0.5Sb12 (0.8 x 1)

    SciTech Connect (OSTI)

    Cho, Jung Y; Ye, Zuxin; Tessema, M.; Waldo, R.A.; Salvador, James R.; Yang, Jihui; Cai, Wei; Wang, Hsin

    2012-01-01

    P-type skutterudites, with nominal compositions YbxFe3.5Ni0.5Sb12 (0.8 x 1), have been synthesized by induction melting with subsequent annealing, and their thermoelectric properties evaluated from 3.5 K to 745 K to assess their suitability for thermoelectric based waste heat recovery applications. We report results for the synthesis and measurements of Seebeck coefficient (S), electrical resistivity ( ), thermal conductivity ( ), Hall coefficient (RH), and effective mass (m*/m0) of YbxFe3.5Ni0.5Sb12 (0.8 x 1). Powder x-ray diffraction and electron probe microanalysis (EPMA) show that this system has a narrow filling fraction range of x ~ 0.84 to 0.86 for Yb in the crystallographic voids. All samples show positive RH for the entire temperature range studied with carrier concentrations ranging from 9.6 1020 to 2.8 1021 cm-3 at room temperature. Relatively high values of S result in high power factors up to 17 Wcm-1K-2 at room temperature. However, large values of and a sharp reduction in the S at high temperature due to bipolar conduction prevent the attainment of high thermoelectric figure of merit.

  17. Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy

    SciTech Connect (OSTI)

    Wen, C.; Ge, B. H.; Cui, Y. X.; Li, F. H.; Zhu, J.; Yu, R.; Cheng, Z. Y.

    2014-11-15

    The stacking faults (SFs) in an AlSb/GaAs (001) interface were investigated using a 300 kV spherical aberration-corrected high-resolution transmission electron microscope (HRTEM). The structure and strain distribution of the single and intersecting (V-shaped) SFs associated with partial dislocations (PDs) were characterized by the [110] HRTEM images and geometric phase analysis, respectively. In the biaxial strain maps ?{sub xx} and ?{sub yy}, a SF can be divided into several sections under different strain states (positive or negative strain values). Furthermore, the strain state for the same section of a SF is in contrast to each other in ?{sub xx} and ?{sub yy} strain maps. The modification in the strain states was attributed to the variation in the local atomic displacements for the SF in the AlSb film on the GaAs substrate recorded in the lattice image. Finally, the single SF was found to be bounded by two 30 PDs. A pair of 30 PDs near the heteroepitaxial interface reacted to form a Lomer-Cottrell sessile dislocation located at the vertices of V-shaped SFs with opposite screw components. The roles of misfit dislocations, such as the PDs, in strain relaxation were also discussed.

  18. Ordered and disordered polymorphs of Na(Ni2/3Sb1/3)O₂: Honeycomb-ordered cathodes for Na-ion batteries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ma, Jeffrey; Wu, Lijun; Bo, Shou -Hang; Khalifah, Peter G.; Grey, Clare P.; Zhu, Yimei

    2015-04-14

    Na-ion batteries are appealing alternatives to Li-ion battery systems for large-scale energy storage applications in which elemental cost and abundance are important. Although it is difficult to find Na-ion batteries which achieve substantial specific capacities at voltages above 3 V (vs Na⁺/Na), the honeycomb-layered compound Na(Ni2/3Sb1/3)O₂ can deliver up to 130 mAh/g of capacity at voltages above 3 V with this capacity concentrated in plateaus at 3.27 and 3.64 V. Comprehensive crystallographic studies have been carried out in order to understand the role of disorder in this system which can be prepared in both “disordered” and “ordered” forms, depending onmore » the synthesis conditions. The average structure of Na(Ni2/3Sb1/3)O₂ is always found to adopt an O3-type stacking sequence, though different structures for the disordered (R3¯m, #166, a = b = 3.06253(3) Å and c = 16.05192(7) Å) and ordered variants (C2/m, #12, a = 5.30458(1) Å, b = 9.18432(1) Å, c = 5.62742(1) Å and β = 108.2797(2)°) are demonstrated through the combined Rietveld refinement of synchrotron X-ray and time-of-flight neutron powder diffraction data. However, pair distribution function studies find that the local structure of disordered Na(Ni2/3Sb1/3)O₂ is more correctly described using the honeycomb-ordered structural model, and solid state NMR studies confirm that the well-developed honeycomb ordering of Ni and Sb cations within the transition metal layers is indistinguishable from that of the ordered phase. The disorder is instead found to mainly occur perpendicular to the honeycomb layers with an observed coherence length of not much more than 1 nm seen in electron diffraction studies. When the Na environment is probed through ²³Na solid state NMR, no evidence is found for prismatic Na environments, and a bulk diffraction analysis finds no evidence of conventional stacking faults. The lack of long range coherence is instead attributed to disorder among the three possible choices for distributing Ni and Sb cations into a honeycomb lattice in each transition metal layer. It is observed that the full theoretical discharge capacity expected for a Ni³⁺/²⁺ redox couple (133 mAh/g) can be achieved for the ordered variant but not for the disordered variant (~110 mAh/g). The first 3.27 V plateau during charging is found to be associated with a two-phase O3 ↔ P3 structural transition, with the P3 stacking sequence persisting throughout all further stages of desodiation.« less

  19. Sandia National Labs: PCNSC: Research: Optical Sciences

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Optical Sciences The focus of the Optical Sciences thrust is to understand and exploit the elegant interaction between light and matter. Our research portfolio encompasses the generation, transmission, manipulation, and detection of light and the development of optical materials with user defined characteristics. We emphasize innovative work in laser and optical materials development, nonlinear optics, spectroscopy, remote sensing, and photon-material interactions. In partnership with our DOE,

  20. Fiber optic based optical coherence tomography (OCT) for dental applications

    SciTech Connect (OSTI)

    Everett, M. J., LLNL

    1998-06-02

    We have developed a hand-held fiber optic based optical coherence tomography (OCT) system for scanning of the oral cavity We have produced, using this scanning device, in viva cross-sectional images of hard and soft dental tissues in human volunteers Clinically relevant anatomical structures, including the gingival margin, periodontal sulcus, and dento-enamel junction, were visible in all the images The dento-enamel junction and the alveolar bone were identifiable in approximately two thirds of the images These images represent, to our knowledge, the first in viva OCT images of human dental tissue.

  1. Fiber optics spectrochemical emission sensors

    DOE Patents [OSTI]

    Griffin, J.W.; Olsen, K.B.

    1992-02-04

    A method is described of in situ monitoring of a body of a fluid stored in a tank or groundwater or vadose zone gases in a well for the presence of selected chemical species. The method uses a probe insertable into the well or tank via a cable and having an electrical apparatus for exciting selected chemical species in the body of fluid. The probe can have a pair of electrodes for initiating a spark or a plasma cell for maintaining a plasma to excite the selected chemical species. The probe also has an optical apparatus for receiving optical emissions emitted by the excited species and optically transmitting the emissions via the cable to an analysis location outside the well. The analysis includes detecting a selected wavelength in the emissions indicative of the presence of the selected chemical species. A plurality of probes can be suspended at an end of a respective cable, with the transmitting and analyzing steps for each probe being synchronized sequentially for one set of support equipment and instrumentation to monitor at multiple test points. The optical apparatus is arranged about the light guide axis so that the selected chemical species are excited in the fluid in alignment with the light guide axis. Optical emissions are received from the excited chemical species along such axis. 18 figs.

  2. Optical sensor of magnetic fields

    DOE Patents [OSTI]

    Butler, M.A.; Martin, S.J.

    1986-03-25

    An optical magnetic field strength sensor for measuring the field strength of a magnetic field comprising a dilute magnetic semi-conductor probe having first and second ends, longitudinally positioned in the magnetic field for providing Faraday polarization rotation of light passing therethrough relative to the strength of the magnetic field. Light provided by a remote light source is propagated through an optical fiber coupler and a single optical fiber strand between the probe and the light source for providing a light path therebetween. A polarizer and an apparatus for rotating the polarization of the light is provided in the light path and a reflector is carried by the second end of the probe for reflecting the light back through the probe and thence through the polarizer to the optical coupler. A photo detector apparatus is operably connected to the optical coupler for detecting and measuring the intensity of the reflected light and comparing same to the light source intensity whereby the magnetic field strength may be calculated.

  3. Optical coherence domain reflectometry guidewire

    DOE Patents [OSTI]

    Colston, Billy W. (Livermore, CA); Everett, Matthew (Pleasanton, CA); Da Silva, Luiz B. (Danville, CA); Matthews, Dennis (Moss Beach, CA)

    2001-01-01

    A guidewire with optical sensing capabilities is based on a multiplexed optical coherence domain reflectometer (OCDR), which allows it to sense location, thickness, and structure of the arterial walls or other intra-cavity regions as it travels through the body during minimally invasive medical procedures. This information will be used both to direct the guidewire through the body by detecting vascular junctions and to evaluate the nearby tissue. The guidewire contains multiple optical fibers which couple light from the proximal to distal end. Light from the fibers at the distal end of the guidewire is directed onto interior cavity walls via small diameter optics such as gradient index lenses and mirrored corner cubes. Both forward viewing and side viewing fibers can be included. The light reflected or scattered from the cavity walls is then collected by the fibers, which are multiplexed at the proximal end to the sample arm of an optical low coherence reflectometer. The guidewire can also be used in nonmedical applications.

  4. Fiber optics spectrochemical emission sensors

    DOE Patents [OSTI]

    Griffin, Jeffrey W. (Kennewick, WA); Olsen, Khris B. (West Richland, WA)

    1992-01-01

    A method of in situ monitoring of a body of a fluid stored in a tank or groundwater or vadose zone gases in a well for the presence of selected chemical species uses a probe insertable into the well or tank via a cable and having electrical apparatus for exciting selected chemical species in the body of fluid. The probe can have a pair of electrodes for initiating a spark or a plasma cell for maintaining a plasma to excite the selected chemical species. The probe also has optical apparatus for receiving optical emissions emitted by the excited species and optically transmitting the emissions via the cable to an analysis location outside the well. The analysis includes detecting a selected wavelength in the emissions indicative of the presence of the selected chemical species. A plurality of probes can be suspended at an end of a respective cable, with the transmitting and analyzing steps for each probe being synchronized sequentially for one set of support equipment and instrumentation to monitor at multiple test points. The optical apparatus is arranged about the light guide axis so that the selected chemical species are excited the fluid in alignment with the light guide axis and optical emissions are received from the excited chemical species along such axis.

  5. Dietary turmeric modulates DMBA-induced p21{sup ras}, MAP kinases and AP-1/NF-{kappa}B pathway to alter cellular responses during hamster buccal pouch carcinogenesis

    SciTech Connect (OSTI)

    Garg, Rachana; Ingle, Arvind; Maru, Girish

    2008-11-01

    The chemopreventive efficacy of turmeric has been established in experimental systems. However, its mechanism(s) of action are not fully elucidated in vivo. The present study investigates the mechanism of turmeric-mediated chemoprevention in 7,12-dimethylbenz(a)anthracene (DMBA)-induced hamster buccal pouch (HBP) carcinogenesis at 2, 4, 6, 10 and 12 weeks. Dietary turmeric (1%) led to decrease in DMBA-induced tumor burden and multiplicity, and enhanced the latency period in parallel, to its modulatory effects on oncogene products and various cellular responses during HBP tumorigenesis. DMBA-induced expression of ras oncogene product, p21 and downstream target, the mitogen-activated protein kinases were significantly decreased by turmeric during HBP carcinogenesis. Turmeric also diminished the DMBA-induced mRNA expression of proto-oncogenes (c-jun, c-fos) and NF-{kappa}B, leading to decreased protein levels and in further attenuation of DMBA-induced AP-1/NF-{kappa}B DNA-binding in the buccal pouch nuclear extracts. Besides, buccal pouch of hamsters receiving turmeric diet showed significant alterations in DMBA-induced effects: (a) decrease in cell proliferation (diminished PCNA and Bcl2 expression), (b) enhanced apoptosis (increased expression of Bax, caspase-3 and apoptotic index), (c) decrease in inflammation (levels of Cox-2, the downstream target of AP-1/NF-{kappa}B, and PGE2) and (d) aberrant expression of differentiation markers, the cytokeratins (1, 5, 8, and 18). Together, the protective effects of dietary turmeric converge on augmenting apoptosis of the initiated cells and decreasing cell proliferation in DMBA-treated animals, which in turn, is reflected in decreased tumor burden, multiplicity and enhanced latency period. Some of these biomarkers are likely to be helpful in monitoring clinical trials and evaluating drug effect measurements.

  6. Integrated optical biosensor system (IOBS)

    DOE Patents [OSTI]

    Grace, Karen M. (Los Alamos, NM); Sweet, Martin R. (Los Alamos, NM); Goeller, Roy M. (Los Alamos, NM); Morrison, Leland Jean (White Rock, NM); Grace, Wynne Kevin (Los Alamos, NM); Kolar, Jerome D. (Los Alamos, NM)

    2007-10-30

    An optical biosensor has a first enclosure with a pathogen recognition surface, including a planar optical waveguide and grating located in the first enclosure. An aperture is in the first enclosure for insertion of sample to be investigated to a position in close proximity to the pathogen recognition surface. A laser in the first enclosure includes means for aligning and means for modulating the laser, the laser having its light output directed toward said grating. Detection means are located in the first enclosure and in optical communication with the pathogen recognition surface for detecting pathogens after interrogation by the laser light and outputting the detection. Electronic means is located in the first enclosure and receives the detection for processing the detection and outputting information on the detection, and an electrical power supply is located in the first enclosure for supplying power to the laser, the detection means and the electronic means.

  7. Optical pumping and xenon NMR

    SciTech Connect (OSTI)

    Raftery, M.D.

    1991-11-01

    Nuclear Magnetic Resonance (NMR) spectroscopy of xenon has become an important tool for investigating a wide variety of materials, especially those with high surface area. The sensitivity of its chemical shift to environment, and its chemical inertness and adsorption properties make xenon a particularly useful NMR probe. This work discusses the application of optical pumping to enhance the sensitivity of xenon NMR experiments, thereby allowing them to be used in the study of systems with lower surface area. A novel method of optically-pumping [sup 129]Xe in low magnetic field below an NMR spectrometer and subsequent transfer of the gas to high magnetic field is described. NMR studies of the highly polarized gas adsorbed onto powdered samples with low to moderate surface areas are now possible. For instance, NMR studies of optically-pumped xenon adsorbed onto polyacrylic acid show that xenon has a large interaction with the surface. By modeling the low temperature data in terms of a sticking probability and the gas phase xenon-xenon interaction, the diffusion coefficient for xenon at the surface of the polymer is determined. The sensitivity enhancement afforded by optical pumping also allows the NMR observation of xenon thin films frozen onto the inner surfaces of different sample cells. The geometry of the thin films results in interesting line shapes that are due to the bulk magnetic susceptibility of xenon. Experiments are also described that combine optical pumping with optical detection for high sensitivity in low magnetic field to observe the quadrupoler evolution of 131 Xe spins at the surface of the pumping cells. In cells with macroscopic asymmetry, a residual quadrupolar interaction causes a splitting in the [sup 131]Xe NMR frequencies in bare Pyrex glass cells and cells with added hydrogen.

  8. Optical pumping and xenon NMR

    SciTech Connect (OSTI)

    Raftery, M.D.

    1991-11-01

    Nuclear Magnetic Resonance (NMR) spectroscopy of xenon has become an important tool for investigating a wide variety of materials, especially those with high surface area. The sensitivity of its chemical shift to environment, and its chemical inertness and adsorption properties make xenon a particularly useful NMR probe. This work discusses the application of optical pumping to enhance the sensitivity of xenon NMR experiments, thereby allowing them to be used in the study of systems with lower surface area. A novel method of optically-pumping {sup 129}Xe in low magnetic field below an NMR spectrometer and subsequent transfer of the gas to high magnetic field is described. NMR studies of the highly polarized gas adsorbed onto powdered samples with low to moderate surface areas are now possible. For instance, NMR studies of optically-pumped xenon adsorbed onto polyacrylic acid show that xenon has a large interaction with the surface. By modeling the low temperature data in terms of a sticking probability and the gas phase xenon-xenon interaction, the diffusion coefficient for xenon at the surface of the polymer is determined. The sensitivity enhancement afforded by optical pumping also allows the NMR observation of xenon thin films frozen onto the inner surfaces of different sample cells. The geometry of the thin films results in interesting line shapes that are due to the bulk magnetic susceptibility of xenon. Experiments are also described that combine optical pumping with optical detection for high sensitivity in low magnetic field to observe the quadrupoler evolution of 131 Xe spins at the surface of the pumping cells. In cells with macroscopic asymmetry, a residual quadrupolar interaction causes a splitting in the {sup 131}Xe NMR frequencies in bare Pyrex glass cells and cells with added hydrogen.

  9. Use of layer strains in strained-layer superlattices to make devices for operation in new wavelength ranges, E. G. , InAsSb at 8 to 12. mu. m. [InAs/sub 1-x/Sb/sub x/

    DOE Patents [OSTI]

    Osbourn, G.C.

    1983-10-06

    An intrinsic semiconductor electro-optical device comprises a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8 to 12 ..mu..m. This radiation responsive p-n junction comprises a strained-layer superlattice (SLS) of alternating layers of two different III-V semiconductors. The lattice constants of the two semiconductors are mismatched, whereby a total strain is imposed on each pair of alternating semiconductor layers in the SLS structure, the proportion of the total strain which acts on each layer of the pair being proportional to the ratio of the layer thicknesses of each layer in the pair.

  10. Optical Switch Using Risley Prisms

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Christenson, Todd R. (Albuquerque, NM)

    2005-02-22

    An optical switch using Risley prisms and rotary microactuators to independently rotate the wedge prisms of each Risley prism pair is disclosed. The optical switch comprises an array of input Risley prism pairs that selectively redirect light beams from a plurality of input ports to an array of output Risley prism pairs that similarly direct the light beams to a plurality of output ports. Each wedge prism of each Risley prism pair can be independently rotated by a variable-reluctance stepping rotary microactuator that is fabricated by a multi-layer LIGA process. Each wedge prism can be formed integral to the annular rotor of the rotary microactuator by a DXRL process.

  11. Optical switch using Risley prisms

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Christenson, Todd R. (Albuquerque, NM)

    2003-04-15

    An optical switch using Risley prisms and rotary microactuators to independently rotate the wedge prisms of each Risley prism pair is disclosed. The optical switch comprises an array of input Risley prism pairs that selectively redirect light beams from a plurality of input ports to an array of output Risley prism pairs that similarly direct the light beams to a plurality of output ports. Each wedge prism of each Risley prism pair can be independently rotated by a variable-reluctance stepping rotary microactuator that is fabricated by a multi-layer LIGA process. Each wedge prism can be formed integral to the annular rotor of the rotary microactuator by a DXRL process.

  12. Solid-state optical microscope

    DOE Patents [OSTI]

    Young, I.T.

    1981-01-07

    A solid state optical microscope is described wherein wide-field and high-resolution images of an object are produced at a rapid rate by utilizing conventional optics with a charge-coupled photodiode array. Means for scanning in one of two orthogonal directions are provided, while the charge-coupled photodiode array scans in the other orthogonal direction. Illumination light from the object is incident upon the photodiodes, creating packets of electrons (signals) which are representative of the illuminated object. The signals are then processed, stored in a memory, and finally displayed as a video signal.

  13. Study of optical Laue diffraction

    SciTech Connect (OSTI)

    Chakravarthy, Giridhar E-mail: aloksharan@email.com; Allam, Srinivasa Rao E-mail: aloksharan@email.com; Satyanarayana, S. V. M. E-mail: aloksharan@email.com; Sharan, Alok E-mail: aloksharan@email.com

    2014-10-15

    We present the study of the optical diffraction pattern of one and two-dimensional gratings with defects, designed using desktop pc and printed on OHP sheet using laser printer. Gratings so prepared, using novel low cost technique provides good visual aid in teaching. Diffraction pattern of the monochromatic light (632.8nm) from the grating so designed is similar to that of x-ray diffraction pattern of crystal lattice with point defects in one and two-dimensions. Here both optical and x-ray diffractions are Fraunhofer. The information about the crystalline lattice structure and the defect size can be known.

  14. Reflective optical imaging system with balanced distortion

    SciTech Connect (OSTI)

    Chapman, Henry N.; Hudyma, Russell M.; Shafer, David R.; Sweeney, Donald W.

    1999-01-01

    An optical system compatible with short wavelength (extreme ultraviolet) An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four reflective elements for projecting a mask image onto a substrate. The four optical elements comprise, in order from object to image, convex, concave, convex and concave mirrors. The optical system is particularly suited for step and scan lithography methods. The invention enables the use of larger slit dimensions associated with ring field scanning optics, improves wafer throughput and allows higher semiconductor device density. The inventive optical system is characterized by reduced dynamic distortion because the static distortion is balanced across the slit width.

  15. Integrated optical tamper sensor with planar waveguide

    DOE Patents [OSTI]

    Carson, R.F.; Casalnuovo, S.A.

    1993-01-05

    A monolithic optical tamper sensor, comprising an optical emitter and detector, connected by an optical waveguide and placed into the critical entry plane of an enclosed sensitive region, the tamper sensor having a myriad of scraps of a material optically absorbent at the wavelength of interest, such that when the absorbent material is in place on the waveguide, an unique optical signature can be recorded, but when entry is attempted into the enclosed sensitive region, the scraps of absorbent material will be displaced and the optical/electrical signature of the tamper sensor will change and that change can be recorded.

  16. Integrated optical tamper sensor with planar waveguide

    DOE Patents [OSTI]

    Carson, Richard F. (Albuquerque, NM); Casalnuovo, Stephen A. (Albuquerque, NM)

    1993-01-01

    A monolithic optical tamper sensor, comprising an optical emitter and detector, connected by an optical waveguide and placed into the critical entry plane of an enclosed sensitive region, the tamper sensor having a myriad of scraps of a material optically absorbent at the wavelength of interest, such that when the absorbent material is in place on the waveguide, an unique optical signature can be recorded, but when entry is attempted into the enclosed sensitive region, the scraps of absorbent material will be displaced and the optical/electrical signature of the tamper sensor will change and that change can be recorded.

  17. Hadamard multimode optical imaging transceiver

    DOE Patents [OSTI]

    Cooke, Bradly J; Guenther, David C; Tiee, Joe J; Kellum, Mervyn J; Olivas, Nicholas L; Weisse-Bernstein, Nina R; Judd, Stephen L; Braun, Thomas R

    2012-10-30

    Disclosed is a method and system for simultaneously acquiring and producing results for multiple image modes using a common sensor without optical filtering, scanning, or other moving parts. The system and method utilize the Walsh-Hadamard correlation detection process (e.g., functions/matrix) to provide an all-binary structure that permits seamless bridging between analog and digital domains. An embodiment may capture an incoming optical signal at an optical aperture, convert the optical signal to an electrical signal, pass the electrical signal through a Low-Noise Amplifier (LNA) to create an LNA signal, pass the LNA signal through one or more correlators where each correlator has a corresponding Walsh-Hadamard (WH) binary basis function, calculate a correlation output coefficient for each correlator as a function of the corresponding WH binary basis function in accordance with Walsh-Hadamard mathematical principles, digitize each of the correlation output coefficient by passing each correlation output coefficient through an Analog-to-Digital Converter (ADC), and performing image mode processing on the digitized correlation output coefficients as desired to produce one or more image modes. Some, but not all, potential image modes include: multi-channel access, temporal, range, three-dimensional, and synthetic aperture.

  18. Fiber optic refractive index monitor

    DOE Patents [OSTI]

    Weiss, Jonathan David (Albuquerque, NM)

    2002-01-01

    A sensor for measuring the change in refractive index of a liquid uses the lowest critical angle of a normal fiber optic to achieve sensitivity when the index of the liquid is significantly less than the index of the fiber core. Another embodiment uses a liquid filled core to ensure that its index is approximately the same as the liquid being measured.

  19. System for testing optical fibers

    DOE Patents [OSTI]

    Davies, Terence J. (Santa Barbara, CA); Franks, Larry A. (Santa Barbara, CA); Nelson, Melvin A. (Santa Barbara, CA)

    1981-01-01

    A system for nondestructively determining the attenuation coefficient, .alpha.(.lambda.), of low-loss optical fiber wave guides. Cerenkov light pulses are generated at a plurality of locations in the fiber by a beam of charged particles. The transit times of selected spectral components and their intensities are utilized to unfold the .alpha.(.lambda.) values over the measured spectrum.

  20. Remotely readable fiber optic compass

    DOE Patents [OSTI]

    Migliori, A.; Swift, G.W.; Garrett, S.L.

    1985-04-30

    A remotely readable fiber optic compass. A sheet polarizer is affixed to a magnet rotatably mounted in a compass body, such that the polarizer rotates with the magnet. The optical axis of the sheet polarizer is preferably aligned with the north-south axis of the magnet. A single excitation light beam is divided into four identical beams, two of which are passed through the sheet polarizer and through two fixed polarizing sheets which have their optical axes at right angles to one another. The angle of the compass magnet with respect to a fixed axis of the compass body can be determined by measuring the ratio of the intensities of the two light beams. The remaining ambiguity as to which of the four possible quadrants the magnet is pointing to is resolved by the second pair of light beams, which are passed through the sheet polarizer at positions which are transected by two semicircular opaque strips formed on the sheet polarizer. The incoming excitation beam and the four return beams are communicated by means of optical fibers, giving a remotely readable compass which has no electrical parts.

  1. Fabrication of an optical component

    DOE Patents [OSTI]

    Nichols, Michael A.; Aikens, David M.; Camp, David W.; Thomas, Ian M.; Kiikka, Craig; Sheehan, Lynn M.; Kozlowski, Mark R.

    2000-01-01

    A method for forming optical parts used in laser optical systems such as high energy lasers, high average power lasers, semiconductor capital equipment and medical devices. The optical parts will not damage during the operation of high power lasers in the ultra-violet light range. A blank is first ground using a fixed abrasive grinding method to remove the subsurface damage formed during the fabrication of the blank. The next step grinds and polishes the edges and forms bevels to reduce the amount of fused-glass contaminants in the subsequent steps. A loose abrasive grind removes the subsurface damage formed during the fixed abrasive or "blanchard" removal process. After repolishing the bevels and performing an optional fluoride etch, the surface of the blank is polished using a zirconia slurry. Any subsurface damage formed during the loose abrasive grind will be removed during this zirconia polish. A post polish etch may be performed to remove any redeposited contaminants. Another method uses a ceria polishing step to remove the subsurface damage formed during the loose abrasive grind. However, any residual ceria may interfere with the optical properties of the finished part. Therefore, the ceria and other contaminants are removed by performing either a zirconia polish after the ceria polish or a post ceria polish etch.

  2. Solid colloidal optical wavelength filter

    DOE Patents [OSTI]

    Alvarez, Joseph L. (Boulder, CO)

    1992-01-01

    A solid colloidal optical wavelength filter includes a suspension of spheal particles dispersed in a coagulable medium such as a setting plastic. The filter is formed by suspending spherical particles in a coagulable medium; agitating the particles and coagulable medium to produce an emulsion of particles suspended in the coagulable medium; and allowing the coagulable medium and suspended emulsion of particles to cool.

  3. Interferometric fiber optic displacement sensor

    DOE Patents [OSTI]

    Farah, John

    1999-01-01

    A method is presented to produce a change in the optical path length in the gap between two single mode optical fibers proportional to the lateral displacement of either fiber end normal to its axis. This is done with the use of refraction or diffraction at the interface between a guiding and non-guiding media to change the direction of propagation of the light in the gap. A method is also presented for laying a waveguide on a cantilever so that the displacement of the tip of the cantilever produces a proportional path length change in the gap by distancing the waveguide from the neutral axis of the cantilever. The fiber is supported as a cantilever or a waveguide is deposited on a micromachined cantilever and incorporated in an interferometer which is made totally on a silicon substrate with the use of integrated-optic technology. A resonant element in the form of a micro-bridge is incorporated in the ridge waveguide and produces a frequency output which is readily digitizeable and immune to laser frequency noise. Finally, monolithic mechanical means for phase modulation are provided on the same sensor substrate. This is done by vibrating the cantilever or micro-bridge either electrically or optically.

  4. Interferometric fiber optic displacement sensor

    DOE Patents [OSTI]

    Farah, J.

    1995-05-30

    A method is presented to produce a change in the optical path length in the gap between two single mode optical fibers proportional to the lateral displacement of either fiber end normal to its axis. This is done with the use of refraction or diffraction at the interface between a guiding and non-guiding media to change the direction of propagation of the light in the gap. A method is also presented for laying a waveguide on a cantilever so that the displacement of the tip of the cantilever produces a proportional path length change in the gap by distancing the waveguide from the neutral axis of the cantilever. The fiber is supported as a cantilever or a waveguide is deposited on a micromachined cantilever and incorporated in an interferometer which is made totally on a silicon substrate with the use of integrated-optic technology. A resonant element in the form of a micro-bridge is incorporated in the ridge waveguide and produces a frequency output which is readily digitizeable and immune to laser frequency noise. Finally, monolithic mechanical means for phase modulation are provided on the same sensor substrate. This is done by vibrating the cantilever or micro-bridge either electrically or optically. 29 figs.

  5. Interferometric fiber optic displacement sensor

    DOE Patents [OSTI]

    Farah, J.

    1999-04-06

    A method is presented to produce a change in the optical path length in the gap between two single mode optical fibers proportional to the lateral displacement of either fiber end normal to its axis. This is done with the use of refraction or diffraction at the interface between a guiding and non-guiding media to change the direction of propagation of the light in the gap. A method is also presented for laying a waveguide on a cantilever so that the displacement of the tip of the cantilever produces a proportional path length change in the gap by distancing the waveguide from the neutral axis of the cantilever. The fiber is supported as a cantilever or a waveguide is deposited on a micromachined cantilever and incorporated in an interferometer which is made totally on a silicon substrate with the use of integrated-optic technology. A resonant element in the form of a micro-bridge is incorporated in the ridge waveguide and produces a frequency output which is readily digitizeable and immune to laser frequency noise. Finally, monolithic mechanical means for phase modulation are provided on the same sensor substrate. This is done by vibrating the cantilever or micro-bridge either electrically or optically. 23 figs.

  6. Interferometric fiber optic displacement sensor

    DOE Patents [OSTI]

    Farah, John

    1995-01-01

    A method is presented to produce a change in the optical path length in the gap between two single mode optical fibers proportional to the lateral displacement of either fiber end normal to its axis. This is done with the use of refraction or diffraction at the interface between a guiding and non-guiding media to change the direction of propagation of the light in the gap. A method is also presented for laying a waveguide on a cantilever so that the displacement of the tip of the cantilever produces a proportional path length change in the gap by distancing the waveguide from the neutral axis of the cantilever. The fiber is supported as a cantilever or a waveguide is deposited on a micromachined cantilever and incorporated in an interferometer which is made totally on a silicon substrate with the use of integrated-optic technology. A resonant element in the form of a micro-bridge is incorporated in the ridge waveguide and produces a frequency output which is readily digitizeable and immune to laser frequency noise. Finally, monolithic mechanical means for phase modulation are provided on the same sensor substrate. This is done by vibrating the cantilever or micro-bridge either electrically or optically.

  7. Remotely readable fiber optic compass

    DOE Patents [OSTI]

    Migliori, Albert (Santa Fe, NM); Swift, Gregory W. (Los Alamos, NM); Garrett, Steven L. (Pebble Beach, CA)

    1986-01-01

    A remotely readable fiber optic compass. A sheet polarizer is affixed to a magnet rotatably mounted in a compass body, such that the polarizer rotates with the magnet. The optical axis of the sheet polarizer is preferably aligned with the north-south axis of the magnet. A single excitation light beam is divided into four identical beams, two of which are passed through the sheet polarizer and through two fixed polarizing sheets which have their optical axes at right angles to one another. The angle of the compass magnet with respect to a fixed axis of the compass body can be determined by measuring the ratio of the intensities of the two light beams. The remaining ambiguity as to which of the four possible quadrants the magnet is pointing to is resolved by the second pair of light beams, which are passed through the sheet polarizer at positions which are transected by two semicircular opaque strips formed on the sheet polarizer. The incoming excitation beam and the four return beams are communicated by means of optical fibers, giving a remotely readable compass which has no electrical parts.

  8. Surface figure control for coated optics

    DOE Patents [OSTI]

    Ray-Chaudhuri, Avijit K.; Spence, Paul A.; Kanouff, Michael P.

    2001-01-01

    A pedestal optical substrate that simultaneously provides high substrate dynamic stiffness, provides low surface figure sensitivity to mechanical mounting hardware inputs, and constrains surface figure changes caused by optical coatings to be primarily spherical in nature. The pedestal optical substrate includes a disk-like optic or substrate section having a top surface that is coated, a disk-like base section that provides location at which the substrate can be mounted, and a connecting cylindrical section between the base and optics or substrate sections. The optic section has an optical section thickness.sup.2 /optical section diameter ratio of between about 5 to 10 mm, and a thickness variation between front and back surfaces of less than about 10%. The connecting cylindrical section may be attached via three spaced legs or members. However, the pedestal optical substrate can be manufactured from a solid piece of material to form a monolith, thus avoiding joints between the sections, or the disk-like base can be formed separately and connected to the connecting section. By way of example, the pedestal optical substrate may be utilized in the fabrication of optics for an extreme ultraviolet (EUV) lithography imaging system, or in any optical system requiring coated optics and substrates with reduced sensitivity to mechanical mounts.

  9. Surface and interfacial reaction study of half cycle atomic layer deposited HfO{sub 2} on chemically treated GaSb surfaces

    SciTech Connect (OSTI)

    Zhernokletov, D. M.; Dong, H.; Brennan, B.; Kim, J.; Yakimov, M.; Tokranov, V.; Oktyabrsky, S.; Wallace, R. M.; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080

    2013-04-01

    An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (XPS) study was conducted in order to investigate the evolution of the HfO{sub 2} dielectric interface with GaSb(100) surfaces after sulfur passivation and HCl etching, designed to remove the native oxides. With the first pulses of tetrakis(dimethylamido)hafnium(IV) and water, a decrease in the concentration of antimony oxide states present on the HCl-etched surface is observed, while antimony sulfur states diminished below the XPS detection limit on sulfur passivated surface. An increase in the amount of gallium oxide/sulfide is seen, suggesting oxygen or sulfur transfers from antimony to gallium during antimony oxides/sulfides decomposition.

  10. Intrinsic Rashba-like splitting in asymmetric Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} heterogeneous topological insulator films

    SciTech Connect (OSTI)

    Liu, Xiaofei; Guo, Wanlin

    2014-08-25

    We show by density functional theory calculations that asymmetric hetero-stacking of Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} films can modulate the topological surface states. Due to the structure inversion asymmetry, an intrinsic Rashba-like splitting of the conical surface bands is aroused. While such splitting in homogeneous Bi{sub 2}Te{sub 3}-class topological insulators can be realized in films with more than three quintuple layers under external electric fields, the hetero-stacking breaks the limit of thickness for preserving the topological nature into the thinnest two quintuple layers. These results indicate that the hetero-stacking can serve as an efficient strategy for spin-resolved band engineering of topological insulators.

  11. Neutron Scattering Investigation of Phonon Scattering Rates in Ag1-xSb1+xTe2+x (x = 0, 0.1, and 0.2)

    SciTech Connect (OSTI)

    Abernathy, Douglas L [ORNL; Budai, John D [ORNL; Delaire, Olivier A [ORNL; Ehlers, Georg [ORNL; Hong, Tao [ORNL; Karapetrova, Evguenia A. [Argonne National Laboratory (ANL); Ma, Jie [ORNL; May, Andrew F [ORNL; McGuire, Michael A [ORNL; Specht, Eliot D [ORNL

    2014-01-01

    The phonon dispersions and scattering rates of the thermoelectric material AgSbTe$_{2}$ were measured as a function of temperature with inelastic neutron scattering. The results show that phonon scattering rates are large and weakly dependent on temperature. The lattice thermal conductivity was calculated from the measured phonon lifetimes and group velocities, providing good agreement with bulk transport measurements. The measured phonon scattering rates and their temperature dependence are compared with models of phonon scattering by anharmonicity and point defect. We find that these processes cannot account for the large total phonon scattering rates observed, and their lack of temperature dependence. Neutron and synchrotron diffraction measurements on single crystals revealed an extensive nanostructure from cation ordering, which is likely responsible for the strong phonon scattering.

  12. Oxidized crystalline (3 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

    SciTech Connect (OSTI)

    Tuominen, M. E-mail: pekka.laukkanen@utu.fi; Lng, J.; Dahl, J.; Yasir, M.; Mkel, J.; Punkkinen, M. P. J.; Laukkanen, P. E-mail: pekka.laukkanen@utu.fi; Kokko, K.; Kuzmin, M.; Osiecki, J. R.; Schulte, K.

    2015-01-05

    The pre-oxidized crystalline (31)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (31)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (31)-O consists of In atoms with unexpected negative (between ?0.64 and ?0.47?eV) and only moderate positive (In{sub 2}O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes.

  13. Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy

    SciTech Connect (OSTI)

    DiNezza, Michael J.; Liu, Shi; Kirk, Alexander P.; Zhang, Yong-Hang; School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 ; Zhao, Xin-Hao; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287

    2013-11-04

    CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.

  14. Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

    SciTech Connect (OSTI)

    Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

    2015-01-12

    Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80150?nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

  15. Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Olson, B. V.; Kim, J. K.; Kadlec, E. A.; Klem, J. F.; Hawkins, S. D.; Leonhardt, D.; Coon, W. T.; Fortune, T. R.; Cavaliere, M. A.; Tauke-Pedretti, A.; et al

    2015-11-03

    Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs 0.91Sb0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F1F2|=0.292. Moreover, the measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. As a result, excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusionmore » currents in nBn photodetectors.« less

  16. Hand-held optical fuel pin scanner

    DOE Patents [OSTI]

    Kirchner, T.L.; Powers, H.G.

    1980-12-07

    An optical scanner for indicia arranged in a focal plane perpendicular to an optical system including a rotatable dove prism. The dove prism transmits a rotating image to a stationary photodiode array.

  17. Hand-held optical fuel pin scanner

    DOE Patents [OSTI]

    Kirchner, Tommy L. (Richland, WA); Powers, Hurshal G. (Richland, WA)

    1987-01-01

    An optical scanner for indicia arranged in a focal plane perpendicular to an optical system including a rotatable dove prism. The dove prism transmits a rotating image to a stationary photodiode array.

  18. Micro benchtop optics by bulk silicon micromachining

    DOE Patents [OSTI]

    Lee, Abraham P. (Walnut Creek, CA); Pocha, Michael D. (Livermore, CA); McConaghy, Charles F. (Livermore, CA); Deri, Robert J. (Pleasanton, CA)

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  19. Optical chirped beam amplification and propagation

    DOE Patents [OSTI]

    Barty, Christopher P.

    2004-10-12

    A short pulse laser system uses dispersive optics in a chirped-beam amplification architecture to produce high peak power pulses and high peak intensities without the potential for intensity dependent damage to downstream optical components after amplification.

  20. Backconversion-limited optical parametric oscillators

    DOE Patents [OSTI]

    Alford, William J. (Albuquerque, NM); Smith, Arlee V. (Albuquerque, NM)

    2000-11-14

    A more efficient class of optical parametric oscillators is made possible by introducing means for reducing signal losses due to backconversion of signal photons in the nonlinear optical medium.

  1. Intensity- and temperature- dependent carrier recombination in InAs/In(As1-xSbx) type-II superlattices

    SciTech Connect (OSTI)

    Olson, Benjamin Varberg; Kadlec, Emil Andrew; Kim, Jin K.; Klem, John F.; Hawkins, Samuel D.; Shaner, Eric A.; Flatte, Michael E.

    2015-04-17

    Our time-resolved measurements for carrier recombination are reported as a midwave infrared InAs/InAs0.66Sb0.34 type-II superlattice (T2SL) function of pump intensity and sample temperature. By including the T2SL doping level in the analysis, the Shockley-Read-Hall (SRH), radiative, and Auger recombination components of the carrier lifetime are uniquely distinguished at each temperature. SRH is the limiting recombination mechanism for excess carrier densities less than the doping level (the low-injection regime) and temperatures less than 175 K. A SRH defect energy of 95 meV, either below the T2SL conduction-band edge or above the T2SL valence-band edge, is identified. Auger recombination limits the carrier lifetimes for excess carrier densities greater than the doping level (the high-injection regime) for all temperatures tested. Additionally, at temperatures greater than 225 K, Auger recombination also limits the low-injection carrier lifetime due to the onset of the intrinsic temperature range and large intrinsic carrier densities. Radiative recombination is found to not have a significant contribution to the total lifetime for all temperatures and injection regimes, with the data implying a photon recycling factor of 15. Using the measured lifetime data, diffusion currents are calculated and compared to calculated Hg1-xCdxTe dark current, indicating that the T2SL can have a lower dark current with mitigation of the SRH defect states. Our results illustrate the potential for InAs/InAs1-xSbx T2SLs as absorbers in infrared photodetectors.

  2. Advanced optical measurements for characterizing photophysical...

    Office of Scientific and Technical Information (OSTI)

    single molecule optical methods for improved control of nanomaterial functionalization. ... paths for future improvements for multiplex nanoparticle synthesis and characterization. ...

  3. Sealed fiber-optic bundle feedthrough

    DOE Patents [OSTI]

    Tanner, Carol E. (Niles, MI)

    2002-01-01

    A sealed fiber-optic bundle feedthrough by which a multitude of fiber-optic elements may be passed through an opening or port in a wall or structure separating two environments at different pressures or temperatures while maintaining the desired pressure or temperature in each environment. The feedthrough comprises a rigid sleeve of suitable material, a bundle of individual optical fibers, and a resin-based sealing material that bonds the individual optical fibers to each other and to the rigid sleeve.

  4. High pressure fiber optic sensor system

    DOE Patents [OSTI]

    Guida, Renato; Xia, Hua; Lee, Boon K; Dekate, Sachin N

    2013-11-26

    The present application provides a fiber optic sensor system. The fiber optic sensor system may include a small diameter bellows, a large diameter bellows, and a fiber optic pressure sensor attached to the small diameter bellows. Contraction of the large diameter bellows under an applied pressure may cause the small diameter bellows to expand such that the fiber optic pressure sensor may measure the applied pressure.

  5. Optical Society of America (OSA) Fellows

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Optical Society of America (OSA) Fellows OSA promotes the generation, application and archiving of knowledge in optics and photonics. Since 1916, OSA has worked to bring together scientists, engineers, educators, technicians and business leaders in the fields of optics and photonics. OSA annually recognizes members who have served with distinction in the advancement of optics with election to the class of Fellow. This honor is reserved to no more than 10% of the total membership. Name Year

  6. Reflective optical imaging method and circuit

    DOE Patents [OSTI]

    Shafer, David R. (Fairfield, CT)

    2001-01-01

    An optical system compatible with short wavelength (extreme ultraviolet) radiation comprising four reflective elements for projecting a mask image onto a substrate. The four optical elements are characterized in order from object to image as convex, concave, convex and concave mirrors. The optical system is particularly suited for step and scan lithography methods. The invention increases the slit dimensions associated with ringfield scanning optics, improves wafer throughput and allows higher semiconductor device density.

  7. International Society for Optical Engineering (SPIE) Fellows

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    International Society for Optical Engineering (SPIE) Fellows SPIE is the international society for optics and photonics founded to advance an interdisciplinary approach to the science and application of light. The Society advances emerging technologies through interdisciplinary information exchange, continuing education, publications, patent precedent, and career and professional growth. Each year SPIE recognizes accomplishments and meritorious service in the optics, photonics, optoelectronics,

  8. Spinning angle optical calibration apparatus

    DOE Patents [OSTI]

    Beer, Stephen K. (Morgantown, WV); Pratt, II, Harold R. (Morgantown, WV)

    1991-01-01

    An optical calibration apparatus is provided for calibrating and reproducing spinning angles in cross-polarization, nuclear magnetic resonance spectroscopy. An illuminated magnifying apparatus enables optical setting an accurate reproducing of spinning "magic angles" in cross-polarization, nuclear magnetic resonance spectroscopy experiments. A reference mark scribed on an edge of a spinning angle test sample holder is illuminated by a light source and viewed through a magnifying scope. When the "magic angle" of a sample material used as a standard is attained by varying the angular position of the sample holder, the coordinate position of the reference mark relative to a graduation or graduations on a reticle in the magnifying scope is noted. Thereafter, the spinning "magic angle" of a test material having similar nuclear properties to the standard is attained by returning the sample holder back to the originally noted coordinate position.

  9. Optical stress generator and detector

    DOE Patents [OSTI]

    Maris, H.J.; Stoner, R.J.

    1998-05-05

    Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects. 32 figs.

  10. Multi-tipped optical component

    DOE Patents [OSTI]

    D'urso, Brian R; Simpson, John T

    2010-04-13

    An optical component includes a support structure having a first composition including a recessive phase material and a second composition including protrusive phase material, the protrusive phase material defining a plurality of spaced apart surface features, each of the surface features comprising a distal end opposite the support structure, integrated with the support structure, and protruding distally from a surface of the support structure, each of the surface features reducing in cross sectional area distally from the support structure to provide a lowest cross sectional area at the distal end, the recessive phase material supporting and separating the surface features and defining a contiguous recessed surface area between the surface features, at least two of the protrusive features being characterized as optical waveguides.

  11. Miniature hybrid optical imaging lens

    DOE Patents [OSTI]

    Sitter, Jr., David N. (Knoxville, TN); Simpson, Marc L. (Knoxville, TN)

    1997-01-01

    A miniature lens system that corrects for imaging and chromatic aberrations, the lens system being fabricated from primarily commercially-available components. A first element at the input to a lens housing is an aperture stop. A second optical element is a refractive element with a diffractive element closely coupled to, or formed a part of, the rear surface of the refractive element. Spaced closely to the diffractive element is a baffle to limit the area of the image, and this is closely followed by a second refractive lens element to provide the final correction. The image, corrected for aberrations exits the last lens element to impinge upon a detector plane were is positioned any desired detector array. The diffractive element is fabricated according to an equation that includes, as variables, the design wavelength, the index of refraction and the radius from an optical axis of the lens system components.

  12. Miniature hybrid optical imaging lens

    DOE Patents [OSTI]

    Sitter, D.N. Jr.; Simpson, M.L.

    1997-10-21

    A miniature lens system that corrects for imaging and chromatic aberrations is disclosed, the lens system being fabricated from primarily commercially-available components. A first element at the input to a lens housing is an aperture stop. A second optical element is a refractive element with a diffractive element closely coupled to, or formed a part of, the rear surface of the refractive element. Spaced closely to the diffractive element is a baffle to limit the area of the image, and this is closely followed by a second refractive lens element to provide the final correction. The image, corrected for aberrations exits the last lens element to impinge upon a detector plane were is positioned any desired detector array. The diffractive element is fabricated according to an equation that includes, as variables, the design wavelength, the index of refraction and the radius from an optical axis of the lens system components. 2 figs.

  13. Optical stress generator and detector

    DOE Patents [OSTI]

    Maris, Humphrey J. (Barrington, RI); Stoner, Robert J (Duxbury, MA)

    1999-01-01

    Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects.

  14. Optical stress generator and detector

    DOE Patents [OSTI]

    Maris, Humphrey J. (Barrington, RI); Stoner, Robert J. (Duxbury, MA)

    1998-01-01

    Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects.

  15. Optically transduced MEMS gyro device

    DOE Patents [OSTI]

    Nielson, Gregory N; Bogart, Gregory R; Langlois, Eric; Okandan, Murat

    2014-05-20

    A bulk micromachined vibratory gyro in which a proof mass has a bulk substrate thickness for a large mass and high inertial sensitivity. In embodiments, optical displacement transduction is with multi-layer sub-wavelength gratings for high sensitivity and low cross-talk with non-optical drive elements. In embodiments, the vibratory gyro includes a plurality of multi-layer sub-wavelength gratings and a plurality of drive electrodes to measure motion of the proof mass induced by drive forces and/or moments and induced by the Coriolis Effect when the gyro experiences a rotation. In embodiments, phase is varied across the plurality gratings and a multi-layer grating having the best performance is selected from the plurality.

  16. Optical stress generator and detector

    DOE Patents [OSTI]

    Maris, Humphrey J. (Barrington, RI); Stoner, Robert J. (Duxbury, MA)

    2001-01-01

    Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects.

  17. Subsea fiber-optic communications

    SciTech Connect (OSTI)

    High, G.; Wright, P.J.

    1997-05-01

    High-cost and hazardous nature of recovering hydrocarbons offshore have led to the trend towards growth in subsea production control. The extended step-out distances of subsea completions is increasing the volume and complexity of subsea data communications beyond the capacity of conventional systems. Improved reservoir management using intelligent sensors, metering, and process equipment, requiring real-time monitoring and control, dictates the use of wideband communication. Fiber optics offers the necessary volume of data transmission, with the high-noise immunity needed for data integrity and safe operation, under the severe Electro-Magnetic Interference (EMI) environments created where high power motors and power cables are used subsea. The marinizing of optical, opto-electronic communication components for production control, data acquisition of subsea completions for the offshore oil industry are described.

  18. Optical stress generator and detector

    DOE Patents [OSTI]

    Maris, Humphrey J. (Barrington, RI); Stoner, Robert J (Duxbury, MA)

    2002-01-01

    Disclosed is a system for the characterization of thin films and interfaces between thin films through measurements of their mechanical and thermal properties. In the system light is absorbed in a thin film or in a structure made up of several thin films, and the change in optical transmission or reflection is measured and analyzed. The change in reflection or transmission is used to give information about the ultrasonic waves that are produced in the structure. The information that is obtained from the use of the measurement methods and apparatus of this invention can include: (a) a determination of the thickness of thin films with a speed and accuracy that is improved compared to earlier methods; (b) a determination of the thermal, elastic, and optical properties of thin films; (c) a determination of the stress in thin films; and (d) a characterization of the properties of interfaces, including the presence of roughness and defects.

  19. Dense pattern optical multipass cell

    DOE Patents [OSTI]

    Silver, Joel A [Santa Fe, NM

    2009-01-13

    A multiple pass optical cell and method comprising providing a pair of opposed cylindrical mirrors having curved axes with substantially equal focal lengths, positioning an entrance hole for introducing light into the cell and an exit hole for extracting light from the cell, wherein the entrance hole and exit hole are coextensive or non-coextensive, introducing light into the cell through the entrance hole, and extracting light from the cell through the exit hole.

  20. Eight electrode optical readout gap

    DOE Patents [OSTI]

    Boettcher, G.E.; Crain, R.W.

    1984-01-01

    A protective device for a plurality of electrical circuits includes a plurality of isolated electrodes forming a gap with a common electrode. An output signal, electrically isolated from the circuits being monitored, is obtained by a photosensor viewing the discharge gap through an optical window. Radioactive stabilization of discharge characteristics is provided for slowly changing voltages and carbon tipped dynamic starters provide desirable discharge characteristics for rapidly varying voltages. A hydrogen permeation barrier is provided on external surfaces of the device.

  1. Eight electrode optical readout gap

    DOE Patents [OSTI]

    Boettcher, Gordon E. (Albuquerque, NM); Crain, Robert W. (Albuquerque, NM)

    1985-01-01

    A protective device for a plurality of electrical circuits includes a pluity of isolated electrodes forming a gap with a common electrode. An output signal, electrically isolated from the circuits being monitored, is obtained by a photosensor viewing the discharge gap through an optical window. Radioactive stabilization of discharge characteristics is provided for slowly changing voltages and carbon tipped dynamic starters provide desirable discharge characteristics for rapidly varying voltages. A hydrogen permeation barrier is provided on external surfaces of the device.

  2. Diagnostics Implemented on NIF - Optical

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Optical Diagnostic acronym Diangostic Port location Built and commisioned by Description of function Published references FABS Q31B FABS Q36B Full Aperture Backscatter Station 150-236 130-185 LLNL For coherent light sources, most of the light leaving the target is back or forward scattered by stimulated Brillouin or Raman scattering. Particularly for hohlraum targets, the laser energy that is not absorbed comes back into the wedge focus lenses (WFLs) and is measured by FABS on two representative

  3. ARM - Measurement - Aerosol optical depth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    depth ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Measurement : Aerosol optical depth A measure of how much light aerosols prevent from passing through a column of atmosphere. Categories Aerosols Instruments The above measurement is considered scientifically relevant for the following instruments. Refer to the datastream (netcdf) file headers of each instrument for a list of all available measurements, including

  4. Dental optical coherence domain reflectometry explorer

    DOE Patents [OSTI]

    Everett, Matthew J. (Livermore, CA); Colston, Jr., Billy W. (Livermore, CA); Sathyam, Ujwal S. (Livermore, CA); Da Silva, Luiz B. (Pleasanton, CA)

    2001-01-01

    A hand-held, fiber optic based dental device with optical coherence domain reflectometry (OCDR) sensing capabilities provides a profile of optical scattering as a function of depth in the tissue at the point where the tip of the dental explorer touches the tissue. This system provides information on the internal structure of the dental tissue, which is then used to detect caries and periodontal disease. A series of profiles of optical scattering or tissue microstructure are generated by moving the explorer across the tooth or other tissue. The profiles are combined to form a cross-sectional, or optical coherence tomography (OCT), image.

  5. Pi in Optics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The sPI CAM: Inside the Applied Optics Lab Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The sPI CAM: Inside the Applied Optics Lab The sPI Cam goes inside the Applied Optics Lab to see how optical scientist Dmitry Dylov uses Pi in optics almost every day. You Might Also Like A001_C062_0101WD.0000211F Silicon Carbide

  6. Reflective optical imaging systems with balanced distortion

    DOE Patents [OSTI]

    Hudyma, Russell M. (San Ramon, CA)

    2001-01-01

    Optical systems compatible with extreme ultraviolet radiation comprising four reflective elements for projecting a mask image onto a substrate are described. The four optical elements comprise, in order from object to image, convex, concave, convex and concave mirrors. The optical systems are particularly suited for step and scan lithography methods. The invention enables the use of larger slit dimensions associated with ring field scanning optics, improves wafer throughput, and allows higher semiconductor device density. The inventive optical systems are characterized by reduced dynamic distortion because the static distortion is balanced across the slit width.

  7. Condenser optic with sacrificial reflective surface

    DOE Patents [OSTI]

    Tichenor, Daniel A.; Kubiak, Glenn D.; Lee, Sang Hun

    2006-07-25

    Employing collector optics that have a sacrificial reflective surface can significantly prolong the useful life of the collector optics and the overall performance of the condenser in which the collector optics are incorporated. The collector optics are normally subject to erosion by debris from laser plasma source of radiation. The presence of an upper sacrificial reflective surface over the underlying reflective surface effectively increases the life of the optics while relaxing the constraints on the radiation source. Spatial and temporally varying reflectivity that results from the use of the sacrificial reflective surface can be accommodated by proper condenser design.

  8. Condenser optic with sacrificial reflective surface

    DOE Patents [OSTI]

    Tichenor, Daniel A. (Castro Valley, CA); Kubiak, Glenn D. (Livermore, CA); Lee, Sung Hun (Sunnyvale, CA)

    2007-07-03

    Employing collector optics that has a sacrificial reflective surface can significantly prolong the useful life of the collector optics and the overall performance of the condenser in which the collector optics are incorporated. The collector optics is normally subject to erosion by debris from laser plasma source of radiation. The presence of an upper sacrificial reflective surface over the underlying reflective surface effectively increases the life of the optics while relaxing the constraints on the radiation source. Spatial and temporally varying reflectivity that results from the use of the sacrificial reflective surface can be accommodated by proper condenser design.

  9. Method for producing damage resistant optics

    DOE Patents [OSTI]

    Hackel, Lloyd A. (Livermore, CA); Burnham, Alan K. (Livermore, CA); Penetrante, Bernardino M. (San Ramon, CA); Brusasco, Raymond M. (Livermore, CA); Wegner, Paul J. (Livermore, CA); Hrubesh, Lawrence W. (Pleasanton, CA); Kozlowski, Mark R. (Windsor, CA); Feit, Michael D. (Livermore, CA)

    2003-01-01

    The present invention provides a system that mitigates the growth of surface damage in an optic. Damage to the optic is minimally initiated. In an embodiment of the invention, damage sites in the optic are initiated, located, and then treated to stop the growth of the damage sites. The step of initiating damage sites in the optic includes a scan of the optic using a laser to initiate defects. The exact positions of the initiated sites are identified. A mitigation process is performed that locally or globally removes the cause of subsequent growth of the damaged sites.

  10. Patent: Ultrafast transient grating radiation to optical image...

    Office of Scientific and Technical Information (OSTI)

    Ultrafast transient grating radiation to optical image converter Citation Details Title: Ultrafast transient grating radiation to optical image converter...

  11. IC-Compatible Technologies for Optical MEMS

    SciTech Connect (OSTI)

    Krygowski, T.W.; Sniegowski, J.J.

    1999-04-30

    Optical Micro Electro Mechanical Systems (Optical MEMS) Technology holds the promise of one-day producing highly integrated optical systems on a common, monolithic substrate. The choice of fabrication technology used to manufacture Optical MEMS will play a pivotal role in the size, functionality and ultimately the cost of optical Microsystems. By leveraging the technology base developed for silicon integrated circuits, large batches of routers, emitters, detectors and amplifiers will soon be fabricated for literally pennies per part. In this article we review the current status of technologies used for Optical MEMS, as well as fabrication technologies of the future, emphasizing manufacturable surface micromachining approaches to producing reliable, low-cost devices for optical communications applications.

  12. On photo-expansion and microlens formation in (GeS{sub 2}){sub 0.74}(Sb{sub 2}S{sub 3}){sub 0.26} chalcogenide glass

    SciTech Connect (OSTI)

    Knotek, P.; Tichy, L.

    2012-12-15

    Graphical abstract: Display Omitted Highlights: ? Photo-expansion induced by sub-band-gap photons in GeSbS glass. ? One-step microlens formation. ? The topography of the microlenses detected by AFM and DHM. ? The good mechanical characteristics of the microlenses were obtained. ? Local light-induced overheating of the glass. -- Abstract: Photo-expansion of the bulk of (GeS{sub 2}){sub 0.74}(Sb{sub 2}S{sub 3}){sub 0.26} glass induced by sub-gap photons is studied employing specifically atomic force microscopy (AFM) namely an atomic force acoustic microscopy (AFAM) and a force spectroscopy and digital holographic microscopy. The results are discussed with respect to the possible role of light induced overheating in the process of photo-expansion.

  13. A high-pressure route to thermoelectrics with low thermal conductivity: The solid solution series AgIn{sub x}Sb{sub 1?x}Te{sub 2} (x=0.10.6)

    SciTech Connect (OSTI)

    Schrder, Thorsten; Rosenthal, Tobias; Souchay, Daniel; Petermayer, Christian; Grott, Sebastian; Scheidt, Ernst-Wilhelm; Gold, Christian; Scherer, Wolfgang; Oeckler, Oliver

    2013-10-15

    Metastable rocksalt-type phases of the solid solution series AgIn{sub x}Sb{sub 1?x}Te{sub 2} (x=0.1, 0.2, 0.4, 0.5 and 0.6) were prepared by high-pressure synthesis at 2.5 GPa and 400 C. In these structures, the coordination number of In{sup 3+} is six, in contrast to chalcopyrite ambient-pressure AgInTe{sub 2} with fourfold In{sup 3+} coordination. Transmission electron microscopy shows that real-structure phenomena and a certain degree of short-range order are present, yet not very pronounced. All three cations are statistically disordered. The high degree of disorder is probably the reason why AgIn{sub x}Sb{sub 1?x}Te{sub 2} samples with 0.4SbTe{sub 2} (? ?0.6 W/K m). The highest ZT value (0.15 at 300 K) is observed for AgIn{sub 0.5}Sb{sub 0.5}Te{sub 2}, mainly due to its high Seebeck coefficient of 160 V/K. Temperature-dependent X-ray powder patterns indicate that the solid solutions are metastable at ambient pressure. At 150 C, the quaternary compounds decompose into chalcopyrite-type AgInTe{sub 2} and rocksalt-type AgSbTe{sub 2}. - Graphical abstract: Reaction scheme, temperature characteristics of the ZT value and a selected-area electron diffraction pattern (background) of AgIn{sub 0.5}Sb{sub 0.5}Te{sub 2}, which crystallizes in a rocksalt-type structure with statistical cation disorder. Display Omitted - Highlights: High-pressure synthesis yields the novel solid solution series AgIn{sub x}Sb{sub 1?x}Te{sub 2}. In contrast to AgInTe{sub 2}, the compounds are inert at ambient pressure. HRTEM shows no pronounced short-range order in the disordered NaCl-type structure. The metastable phases exhibit very low total thermal conductivities <0.5 W/K m. ZT values of 0.15 at room temperature were measured for AgIn{sub 0.5}Sb{sub 0.5}Te{sub 2}.

  14. Enhancement of spin polarization via Fermi level tuning in Co{sub 2}MnSn{sub 1−x}Sb{sub x} (x = 0, 0.25. 0.5, 0.75, 1) Heusler alloys

    SciTech Connect (OSTI)

    Singh, Mukhtiyar Thakur, Jyoti; Kashyap, Manish K.; Saini, Hardev S.

    2014-04-24

    Full potential approach has been employed to tune Fermi level in Co{sub 2}MnSn{sub 1−x}Sb{sub x} (x = 0, 0.25, 0.5, 0.75, 1) Heulser alloys for enhancement of spin polarization and finding signature of half metallicity. Present density functional theory (DFT) based calculation indicates that stoichoimetric Heusler alloy, Co{sub 2}MnSn is not a half-metallic ferromagnet but the doping of Sb in it results in the shifting of E{sup F} in well-defined energy gap which leads the 100% spin polarization in the resultant alloys. The magnetism in present alloys is governed by localized moment on Mn atom mainly. The tuning of half-metallicity using doping can be proved as an ideal technique to search the new materials which can accomplish the need of spintronics.

  15. Optical switching system and method

    DOE Patents [OSTI]

    Ranganathan, Radha (N. Tonawanda, NY); Gal, Michael (Engadine, AU); Taylor, P. Craig (Salt Lake City, UT)

    1992-01-01

    An optically bistable device is disclosed. The device includes a uniformly thick layer of amorphous silicon to constitute a Fabry-Perot chamber positioned to provide a target area for a probe beam. The probe beam has a maximum energy less than the energy band gap of the amorphous semiconductor. In a preferred embodiment, a multilayer dielectric mirror is positioned on the Fabry-Perot chamber to increase the finesse of switching of the device. The index of refraction of the amorphous material is thermally altered to alter the transmission of the probe beam.

  16. Visual-servoing optical microscopy

    DOE Patents [OSTI]

    Callahan, Daniel E. (Martinez, CA); Parvin, Bahram (Hercules, CA)

    2009-06-09

    The present invention provides methods and devices for the knowledge-based discovery and optimization of differences between cell types. In particular, the present invention provides visual servoing optical microscopy, as well as analysis methods. The present invention provides means for the close monitoring of hundreds of individual, living cells over time: quantification of dynamic physiological responses in multiple channels; real-time digital image segmentation and analysis; intelligent, repetitive computer-applied cell stress and cell stimulation; and the ability to return to the same field of cells for long-term studies and observation. The present invention further provides means to optimize culture conditions for specific subpopulations of cells.

  17. Visual-servoing optical microscopy

    DOE Patents [OSTI]

    Callahan, Daniel E; Parvin, Bahram

    2013-10-01

    The present invention provides methods and devices for the knowledge-based discovery and optimization of differences between cell types. In particular, the present invention provides visual servoing optical microscopy, as well as analysis methods. The present invention provides means for the close monitoring of hundreds of individual, living cells over time; quantification of dynamic physiological responses in multiple channels; real-time digital image segmentation and analysis; intelligent, repetitive computer-applied cell stress and cell stimulation; and the ability to return to the same field of cells for long-term studies and observation. The present invention further provides means to optimize culture conditions for specific subpopulations of cells.

  18. Visual-servoing optical microscopy

    DOE Patents [OSTI]

    Callahan, Daniel E. (Martinez, CA); Parvin, Bahram (Mill Valley, CA)

    2011-05-24

    The present invention provides methods and devices for the knowledge-based discovery and optimization of differences between cell types. In particular, the present invention provides visual servoing optical microscopy, as well as analysis methods. The present invention provides means for the close monitoring of hundreds of individual, living cells over time; quantification of dynamic physiological responses in multiple channels; real-time digital image segmentation and analysis; intelligent, repetitive computer-applied cell stress and cell stimulation; and the ability to return to the same field of cells for long-term studies and observation. The present invention further provides means to optimize culture conditions for specific subpopulations of cells.

  19. All-Optical Molecular Orientation

    SciTech Connect (OSTI)

    Oda, Keita; Hita, Masafumi; Minemoto, Shinichirou; Sakai, Hirofumi [Department of Physics, Graduate School of Science, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

    2010-05-28

    We report clear evidence of all-optical orientation of carbonyl sulfide molecules with an intense nonresonant two-color laser field in the adiabatic regime. The technique relies on the combined effects of anisotropic hyperpolarizability interaction and anisotropic polarizability interaction and does not rely on the permanent dipole interaction with an electrostatic field. It is demonstrated that the molecular orientation can be controlled simply by changing the relative phase between the two wavelength fields. The present technique brings researchers a new steering tool of gaseous molecules and will be quite useful in various fields such as electronic stereodynamics in molecules and ultrafast molecular imaging.

  20. Borehole optical lateral displacement sensor

    DOE Patents [OSTI]

    Lewis, R.E.

    1998-10-20

    There is provided by this invention an optical displacement sensor that utilizes a reflective target connected to a surface to be monitored to reflect light from a light source such that the reflected light is received by a photoelectric transducer. The electric signal from the photoelectric transducer is then imputed into electronic circuitry to generate an electronic image of the target. The target`s image is monitored to determine the quantity and direction of any lateral displacement in the target`s image which represents lateral displacement in the surface being monitored. 4 figs.