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1

Recovery Act: Low Cost Integrated Substrate for OLED Lighting Development  

SciTech Connect (OSTI)

PPG pursued the development of an integrated substrate, including the anode, external, and internal extraction layers. The objective of PPGâ??s program was to achieve cost reductions by displacing the existing expensive borosilicate or double-side polished float glass substrates and developing alternative electrodes and scalable light extraction layer technologies through focused and short-term applied research. One of the key highlights of the project was proving the feasibility of using PPGâ??s high transmission Solarphire® float glass as a substrate to consistently achieve organic lightemitting diode (OLED) devices with good performance and high yields. Under this program, four low-cost alternatives to the Indium Tin Oxide (ITO) anode were investigated using pilot-scale magnetron sputtered vacuum deposition (MSVD) and chemical vapor deposition (CVD) technologies. The anodes were evaluated by fabricating small and large phosphorescent organic lightemitting diode (PHOLED) devices at Universal Display Corporation (UDC). The device performance and life-times comparable to commercially available ITO anodes were demonstrated. A cost-benefit analysis was performed to down-select two anodes for further low-cost process development. Additionally, PPG developed and evaluated a number of scalable and compatible internal and external extraction layer concepts such as scattering layers on the outside of the glass substrate or between the transparent anode and the glass interface. In one external extraction layer (EEL) approach, sol-gel sprayed pyrolytic coatings were deposited using lab scale equipment by hand or automated spraying of sol-gel solutions on hot glass, followed by optimizing of scattering with minimal absorption. In another EEL approach, PPG tested large-area glass texturing by scratching a glass surface with an abrasive roller and acid etching. Efficacy enhancements of 1.27x were demonstrated using white PHOLED devices for 2.0mm substrates which are at par with the standard diffuser sheets used by OLED manufacturers. For an internal extraction layer (IEL), PPG tested two concepts combining nanoparticles either in a solgel coating inserted between the anode and OLED or anode and glass interface, or incorporated into the internal surface of the glass. Efficacy enhancements of 1.31x were demonstrated using white PHOLED devices for the IEL by itself and factors of 1.73x were attained for an IEL in combination of thick acrylic block as an EEL. Recent offline measurements indicate that, with further optimization, factors over 2.0x could be achieved through an IEL alone.

Scott Benton; Abhinav Bhandari

2012-09-30T23:59:59.000Z

2

Quantum Dot Light Enhancement Substrate for OLED Solid-State Lighting  

SciTech Connect (OSTI)

With DOE Award No. DE-EE00000628, QD Vision developed and demonstrated a cost-competitive solution for increasing the light extraction efficiency of OLEDs with efficient and stable color rendering index (CRI) for solid state lighting (SSL). Solution processable quantum dot (QD) films were integrated into OLED ITO-glass substrates to generate tunable white emission from blue emitting OLED) devices as well as outcouple light from the ITO film. This QD light-enhancement substrate (QD-LED) technology demonstrated a 60% increase in OLED forward light out-coupling, a value which increases to 76% when considering total increase in multi-directional light output. The objective for the first year was an 80% increase in light output. This project seeks to develop and demonstrate a cost-competitive solution for realizing increased extraction efficiency organic light emitting devices (OLEDs) with efficient and stable color rendering index (CRI) for SSL. Solution processible quantum dot (QD) films will be utilized to generate tunable white emission from blue emitting phosphorescent OLED (Ph-OLED) devices.

James Perkins; Matthew Stevenson; Gagan Mahan; Seth Coe-Sullivan; Peter Kazlas

2011-01-21T23:59:59.000Z

3

Integrated fuses for OLED lighting device  

DOE Patents [OSTI]

An embodiment of the present invention pertains to an electroluminescent lighting device for area illumination. The lighting device is fault tolerant due, in part, to the patterning of one or both of the electrodes into strips, and each of one or more of these strips has a fuse formed on it. The fuses are integrated on the substrate. By using the integrated fuses, the number of external contacts that are used is minimized. The fuse material is deposited using one of the deposition techniques that is used to deposit the thin layers of the electroluminescent lighting device.

Pschenitzka, Florian (San Jose, CA)

2007-07-10T23:59:59.000Z

4

High Efficancy Integrated Under-Cabinet Phosphorescent OLED  

SciTech Connect (OSTI)

In this two year program Universal Display Corporation (UDC) together with the University of Michigan, Teknokon, developed and delivered an energy efficient phosphorescent OLED under cabinet illumination system. Specifically the UDC team goal was in 2011 to deliver five (5) Beta level OLED under cabinet lighting fixtures each consisting of five 6-inch x 6-inch OLED lighting panels, delivering over 420 lumens, at an overall system efficacy of >60 lm/W, a CRI of >85, and a projected lifetime to 70% of initial luminance to exceed 20,000 hours. During the course of this program, the Team pursued the commercialization of these OLED based under cabinet lighting fixtures, to enable the launch of commercial OLED lighting products. The UDC team was ideally suited to develop these novel and efficient solid state lighting fixtures, having both the technical experience and commercial distribution mechanisms to leverage work performed under this contract. UDC's business strategy is to non-exclusively license its PHOLED technology to lighting manufacturers, and also supply them with our proprietary PHOLED materials. UDC is currently working with several licensees who are manufacturing OLED lighting panels using our technology. During this 2 year program, we further developed our high efficiency white Phosphorescent OLEDs from the first milestone, achieving a 80 lm/W single pixel to the final milestone, achieving an under-cabinet PHOLED lighting system that operates at 56 lm/W at 420 lumens. Each luminaire was comprised of ten 15cm x 7.5cm lighting modules mounted in outcoupling enhancement lenses and a control module. The lamps modules are connected together using either plugs or wires with plugs on each end, allowing for unlimited configurations. The lamps are driven by an OLED driver mounted in an enclosure which includes the AC plug. As a result of advancements gained under this program, the path to move OLED lighting panels from development into manufacturing has been further realized. We have found that under-cabinet lighting is an ideal first entry product opportunity to launch OLED lighting for residential applications. From the studies that we have performed, our PHOLED under-cabinet lighting system performance is very similar to many of the current commercially available LED under-cabinet luminaires. We also found that the projected cost of PHOLED luminaire should be comparable to the LED luminaire by 2015. With the additional benefits of PHOLED lighting, no glare, better uniformity and low operating temperature, it can be easily seen how the PHOLED under-cabinet luminaire could be preferred over the LED competition. Although the metrics we set for this program were extremely aggressive, the performance we achieved and reported, represents a very significant advancement in the OLED lighting industry.

Michael Hack

2001-10-31T23:59:59.000Z

5

Enhanced performance of organic light-emitting diodes (OLEDs) and OLED-based photoluminescent sensing platforms by novel microstructures and device architectures  

SciTech Connect (OSTI)

After a general introduction to OLEDs and OLED-based PL sensors, the transient emission mechanism of guest-host OLEDs is described both experimentally and theoretically. A monolithic and easy-to-apply process is demonstrated for fabricating multicolor microcavity OLEDs (that improve the sensor platform). The outcoupling issues of OLEDs at the substrate/air interface are addressed by using a microstructured polymer film resulting from a PS and polyethylene glycol (PEG) mixture. Based on the understanding of OLEDs and their improvement, research was done in order to realize integrated all organic-based O{sub 2} and pH sensors with improved signal intensity and sensitivity. The sensor design modification and optimization are summarized

Liu, Rui [Ames Laboratory

2012-08-01T23:59:59.000Z

6

Thin Film Packaging Solutions for High Efficiency OLED Lighting Products  

SciTech Connect (OSTI)

The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology was characterized as having less than 10% change in transmission during the 15,000 hour test period; (3) demonstrated thin film encapsulation of a phosphorescent OLED device with 1,500 hours of lifetime at 60 C and 80% RH; (4) demonstrated that a thin film laminate encapsulation, in addition to the direct thin film deposition process, of a polymer OLED device was another feasible packaging strategy for OLED lighting. The thin film laminate strategy was developed to mitigate defects, demonstrate roll-to-roll process capability for high volume throughput (reduce costs) and to support a potential commercial pathway that is less dependent upon integrated manufacturing since the laminate could be sold as a rolled good; (5) demonstrated that low cost 'blue' glass substrates could be coated with a siloxane barrier layer for planarization and ion-protection and used in the fabrication of a polymer OLED lighting device. This study further demonstrated that the substrate cost has potential for huge cost reductions from the white borosilicate glass substrate currently used by the OLED lighting industry; (6) delivered four-square feet of white phosphorescent OLED technology, including novel high efficiency devices with 82 CRI, greater than 50 lm/W efficiency, and more than 1,000 hours lifetime in a product concept model shelf; (7) presented and or published more than twenty internal studies (for private use), three external presentations (OLED workshop-for public use), and five technology-related external presentations (industry conferences-for public use); and (8) issued five patent applications, which are in various maturity stages at time of publication. Delivery of thin film encapsulated white phosphorescent OLED lighting technology remains a challenging technical achievement, and it seems that commercial availability of thin, bright, white OLED light that meets market requirements will continue to require research and development effort. However, there will be glass encapsulated white OLED lighting products commercialized in niche markets during the 2008 calendar year. This commercializ

None

2008-06-30T23:59:59.000Z

7

OLED area illumination source  

DOE Patents [OSTI]

The present invention relates to an area illumination light source comprising a plurality of individual OLED panels. The individual OLED panels are configured in a physically modular fashion. Each OLED panel comprising a plurality of OLED devices. Each OLED panel comprises a first electrode and a second electrode such that the power being supplied to each individual OLED panel may be varied independently. A power supply unit capable of delivering varying levels of voltage simultaneously to the first and second electrodes of each of the individual OLED panels is also provided. The area illumination light source also comprises a mount within which the OLED panels are arrayed.

Foust, Donald Franklin (Scotia, NY); Duggal, Anil Raj (Niskayuna, NY); Shiang, Joseph John (Niskayuna, NY); Nealon, William Francis (Gloversville, NY); Bortscheller, Jacob Charles (Clifton Park, NY)

2008-03-25T23:59:59.000Z

8

OLED devices  

DOE Patents [OSTI]

An OLED device having an emission layer formed of an ambipolar phosphine oxide host material and a dopant, a hole transport layer in electrical communication with an anode, an electron transport layer in communication with a cathode, wherein the HOMO energy of the hole transport layer is substantially the same as the HOMO energy of the ambipolar host in the emission layer, and the LUMO energy of the electron transport layer is substantially the same as the LUMO energy of the ambipolar host in the emission layer.

Sapochak, Linda Susan [Arlington, VA; Burrows, Paul Edward [Kennewick, WA; Bimalchandra, Asanga [Richland, WA

2011-02-22T23:59:59.000Z

9

Integrated broadband bowtie antenna on transparent substrate  

E-Print Network [OSTI]

The bowtie antenna is a topic of growing interest in recent years. In this paper, we design, fabricate, and characterize a modified gold bowtie antenna integrated on a transparent glass substrate. We numerically investigate the antenna characteristics, specifically its resonant frequency and enhancement factor. We simulate the dependence of resonance frequency on bowtie geometry, and verify the simulation results through experimental investigation, by fabricating different sets of bowtie antennas on glass substrates utilizing CMOS compatible processes and measuring their resonance frequencies. Our designed bowtie antenna provides a strong broadband electric field enhancement in its feed gap. The far-field radiation pattern of the bowtie antenna is measured, and it shows dipole-like characteristics with large beam width. Such a broadband antenna will be useful for a myriad of applications, ranging from wireless communications to electromagnetic wave detection.

Zhang, Xingyu; Subbaraman, Harish; Zhan, Qiwen; Pan, Zeyu; Chung, Chi-jui; Yan, Hai; Chen, Ray T

2015-01-01T23:59:59.000Z

10

PPG Industries Develops a Low-Cost Integrated OLED Substrate | Department  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Careerlumens_placard-green.epsEnergy1.pdf More Documents &PORTSFUTURE OHIOIMPERIALPermitof

11

Development of High Efficacy, Low Cost Phosphorescent Oled Lightning Luminaire  

SciTech Connect (OSTI)

In this two year program, UDC together with Armstrong World Industries, Professor Stephen Forrest (University of Michigan) and Professor Mark Thompson (University of Southern California) planned to develop and deliver high efficiency OLED lighting luminaires as part of an integrated ceiling illumination system that exceed the Department of Energy (DOE) 2010 performance projections. Specifically the UDC team in 2010 delivered two prototype OLED ceiling illumination systems, each consisting of four individual OLED lighting panels on glass integrated into Armstrong's novel TechZone open architecture ceiling systems, at an overall system efficacy of 51 lm/W, a CRI = 85 and a projected lifetime to 70% of initial luminance to exceed 10,000 hours. This accomplishment represents a 50% increase in luminaire efficacy and a factor of two in lifetime over that outlined in the solicitation. In addition, the team has also delivered one 15cm x 15cm lighting panel fabricated on a flexible metal foil substrate, demonstrating the possibility using OLEDs in a range of form factors. During this program, our Team has pursued the commercialization of these OLED based ceiling luminaires, with a goal to launch commercial products within the next three years. We have proven that our team is ideally suited to develop these highly novel and efficient solid state lighting luminaires, having both the technical experience and commercial strategy to leverage work performed under this contract. Our calculations show that the success of our program could lead to energy savings of more than 0.5 quads or 8 MMTC (million metric tons of carbon) per year by 2016.

Michael Hack

2010-07-09T23:59:59.000Z

12

A Middleware Substrate for Integrating Services on the Grid  

E-Print Network [OSTI]

A Middleware Substrate for Integrating Services on the Grid Viraj Bhat and Manish Parashar://www.caip.rutgers.edu/TASSL Abstract. In this paper we present the design, implementation and evaluation of the Grid-enabled Discover middleware substrate. The mid- dleware substrate enables Grid infrastructure services provided by the Globus

Daniels, Jeffrey J.

13

My Favorite OLED Panel  

Energy Savers [EERE]

My Favorite OLED Panel Basar Erdener Sun and Snow Photo Courtesy 2009-2015 Kvikken 2 Sizable 3 Sizable Photo Courtesy Printmeneer on Etsy 4 5 Shapeable Photo Courtesy Dia...

14

OLEDS FOR GENERAL LIGHTING  

SciTech Connect (OSTI)

The goal of this program was to reduce the long term technical risks that were keeping the lighting industry from embracing and developing organic light-emitting diode (OLED) technology for general illumination. The specific goal was to develop OLEDs for lighting to the point where it was possible to demonstrate a large area white light panel with brightness and light quality comparable to a fluorescence source and with an efficacy comparable to that of an incandescent source. it was recognized that achieving this would require significant advances in three area: (1) the improvement of white light quality for illumination, (2) the improvement of OLED energy efficiency at high brightness, and (3) the development of cost-effective large area fabrication techniques. The program was organized such that, each year, a ''deliverable'' device would be fabricated which demonstrated progress in one or more of the three critical research areas. In the first year (2001), effort concentrated on developing an OLED capable of generating high illumination-quality white light. Ultimately, a down-conversion method where a blue OLED was coupled with various down-conversion layers was chosen. Various color and scattering models were developed to aid in material development and device optimization. The first year utilized this approach to deliver a 1 inch x 1 inch OLED with higher illumination-quality than available fluorescent sources. A picture of this device is shown and performance metrics are listed. To their knowledge, this was the first demonstration of true illumination-quality light from an OLED. During the second year, effort concentrated on developing a scalable approach to large area devices. A novel device architecture consisting of dividing the device area into smaller elements that are monolithically connected in series was developed. In the course of this development, it was realized that, in addition to being scalable, this approach made the device tolerant to the most common OLED defect--electrical shorts. This architecture enabled the fabrication of a 6 inch x 6 inch OLED deliverable for 2002. A picture of this deliverable is shown and the performance metrics are listed. At the time, this was the highest efficiency, highest lumen output illumination-quality OLED in existence. The third year effort concentrated on improving the fabrication yield of the 6 inch x 6 inch devices and improving the underlying blue device efficiency. An efficiency breakthrough was achieved through the invention of a new device structure such that now 15 lumen per watt devices could be fabricated. A 2 feet x 2 feet OLED panel consisting of sixteen 6 inch x 6 inch high efficiency devices tiled together was then fabricated. Pictures of this panel are shown with performance metrics listed. This panel met all project objectives and was the final deliverable for the project. It is now the highest efficiency, highest lumen output, illumination-quality OLED in existence.

Anil Duggal; Don Foust; Chris Heller; Bill Nealon; Larry Turner; Joe Shiang; Nick Baynes; Tim Butler; Nalin Patel

2004-02-29T23:59:59.000Z

15

Roll-to-Roll Solution-Processible Small-Molecule OLEDs  

SciTech Connect (OSTI)

The objective of this program is to develop key knowledge and make critical connections between technologies needed to enable low-cost manufacturing of OLED lighting products. In particular, the program was intended to demonstrate the feasibility of making high performance Small-Molecule OLEDs (SM-OLED) using a roll-to-roll (R2R) wet-coating technique by addressing the following technical risks (1) Whether the wet-coating technique can provide high performance OLEDs, (2) Whether SM-OLED can be made in a R2R manner, (3) What are the requirements for coating equipment, and (4) Whether R2R OLEDs can have the same performance as the lab controls. The program has been managed and executed according to the Program Management Plan (PMP) that was first developed at the beginning of the program and further revised accordingly as the program progressed. Significant progress and risk reductions have been accomplished by the end of the program. Specific achievements include: (1) Demonstrated that wet-coating can provide OLEDs with high LPW and long lifetime; (2) Demonstrated R2R OLEDs can be as efficient as batch controls (Figure 1) (3) Developed & validated basic designs for key equipment necessary for R2R SM-OLEDs; (4) Developed know-hows & specifications on materials & ink formulations critical to wetcoating; (5) Developed key R2R processes for each OLED layer (6) Identified key materials and components such as flexible barrier substrates necessary for R2R OLEDs.

Liu, Jie Jerry

2012-07-31T23:59:59.000Z

16

A Novel Thermal Position Sensor Integrated On A Plastic Substrate  

E-Print Network [OSTI]

A thermal position sensor was fabricated and evaluated. The device consists of an array of temperature sensing elements, fabricated entirely on a plastic substrate. A novel fabrication technology was implemented which allows direct integration with read out electronics and communication to the macro-world without the use of wire bonding. The fabricated sensing elements are temperature sensitive Pt resistors with an average TCR of 0.0024/C. The device realizes the detection of the position and the motion of a heating source by monitoring the resistance variation of the thermistor array. The application field of such a cost-effective position sensor is considered quite extensive.

A. Petropoulos; G. Kaltsas; D. Goustouridis; A. G. Nassiopoulou

2008-01-07T23:59:59.000Z

17

High Efficiency, Illumination Quality OLEDs for Lighting  

SciTech Connect (OSTI)

The goal of the program was to demonstrate a 45 lumen per watt white light device based upon the use of multiple emission colors through the use of solution processing. This performance level is a dramatic extension of the team's previous 15 LPW large area illumination device. The fundamental material system was based upon commercial polymer materials. The team was largely able to achieve these goals, and was able to deliver to DOE a 90 lumen illumination source that had an average performance of 34 LPW a 1000 cd/m{sup 2} with peak performances near 40LPW. The average color temperature is 3200K and the calculated CRI 85. The device operated at a brightness of approximately 1000cd/m{sup 2}. The use of multiple emission colors particularly red and blue, provided additional degrees of design flexibility in achieving white light, but also required the use of a multilayered structure to separate the different recombination zones and prevent interconversion of blue emission to red emission. The use of commercial materials had the advantage that improvements by the chemical manufacturers in charge transport efficiency, operating life and material purity could be rapidly incorporated without the expenditure of additional effort. The program was designed to take maximum advantage of the known characteristics of these material and proceeded in seven steps. (1) Identify the most promising materials, (2) assemble them into multi-layer structures to control excitation and transport within the OLED, (3) identify materials development needs that would optimize performance within multilayer structures, (4) build a prototype that demonstrates the potential entitlement of the novel multilayer OLED architecture (5) integrate all of the developments to find the single best materials set to implement the novel multilayer architecture, (6) further optimize the best materials set, (7) make a large area high illumination quality white OLED. A photo of the final deliverable is shown. In 2003, a large area, OLED based illumination source was demonstrated that could provide light with a quality, quantity, and efficiency on par with what can be achieved with traditional light sources. The demonstration source was made by tiling together 16 separate 6-inch x 6-inch blue-emitting OLEDs. The efficiency, total lumen output, and lifetime of the OLED based illumination source were the same as what would be achieved with an 80 watt incandescent bulb. The devices had an average efficacy of 15 LPW and used solution-processed OLEDs. The individual 6-inch x 6-inch devices incorporated three technology strategies developed specifically for OLED lighting -- downconversion for white light generation, scattering for outcoupling efficiency enhancement, and a scalable monolithic series architecture to enable large area devices. The downconversion approach consists of optically coupling a blue-emitting OLED to a set of luminescent layers. The layers are chosen to absorb the blue OLED emission and then luminescence with high efficiency at longer wavelengths. The composition and number of layers are chosen so that the unabsorbed blue emission and the longer wavelength re-emission combine to make white light. A downconversion approach has the advantage of allowing a wide variety of colors to be made from a limited set of blue emitters. In addition, one does not have to carefully tune the emission wavelength of the individual electro-luminescent species within the OLED device in order to achieve white light. The downconversion architecture used to develop the 15LPW large area light source consisted of a polymer-based blue-emitting OLED and three downconversion layers. Two of the layers utilized perylene based dyes from BASF AG of Germany with high quantum efficiency (>98%) and one of the layers consisted of inorganic phosphor particles (Y(Gd)AG:Ce) with a quantum efficiency of {approx}85%. By independently varying the optical density of the downconversion layers, the overall emission spectrum could be adjusted to maximize performance for lighting (e.g. blackbody temp

Joseph Shiang; James Cella; Kelly Chichak; Anil Duggal; Kevin Janora; Chris Heller; Gautam Parthasarathy; Jeffery Youmans; Joseph Shiang

2008-03-31T23:59:59.000Z

18

Substrate engineering for monolithic integration of III-V semiconductors with Si CMOS technology  

E-Print Network [OSTI]

Ge virtual substrates, fabricated using Si1-xGex-.Ge, compositionally graded buffers, enable the epitaxial growth of device-quality GaAs on Si substrates, but monolithic integration of III-V semiconductors with Si CMOS ...

Dohrman, Carl Lawrence

2008-01-01T23:59:59.000Z

19

Substrate-Integrated Waveguide Filter Design Using Mode-Matching Techniques  

E-Print Network [OSTI]

technologies, substrate-integrated waveguide (SIW) components have emerged as low-cost and planar alternatives for the analysis and design of substrate-integrated waveguide (SIW) filters. Recently developed fabrication methods, which are more geared towards waveguide-based analysis and design, are in demand. Two

Bornemann, Jens

20

Design of Multilayered Substrate-Integrated Waveguide Cross-Slot Couplers  

E-Print Network [OSTI]

Design of Multilayered Substrate-Integrated Waveguide Cross-Slot Couplers Vladimir A. Labay1 , Jens directional coupler designs in substrate-integrated waveguide (SIW) technology. Interface ports are modeled. Several Ka-band double- or triple-layered cross-guide coupler designs are presented using an Ansoft's HFSS

Bornemann, Jens

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

UDC Demonstrates Phosphorescent OLED Systems  

Broader source: Energy.gov [DOE]

Universal Display Corporation (UDC), along with project partners Armstrong World Industries and the universities of Michigan and Southern California, have successfully demonstrated two phosphorescent OLED (PHOLED™) luminaire systems, the first of their kind in the U.S. This achievement marks a critical step in the development of practical OLED lighting in a complete luminaire system, including decorative housing, power supply, mounting, and maintenance provisions. Each luminaire has overall dimensions of approximately 15x60 cm and is comprised of four 15x15 cm phosphorescent OLED panels. With a combined power supply and lamp efficacy of 51 lm/W, the prototype luminaire is about twice as efficient as the market-leading halogen-based systems. In addition, the prototype OLED lighting system snaps into Armstrong's TechZone™ Ceiling System, which is commercially available in the U.S.x

22

Tunable Substrate Integrated Waveguide Filters Implemented with PIN Diodes and RF MEMS Switches  

E-Print Network [OSTI]

This thesis presents the first fully tunable substrate integrated waveguide (SIW) filter implemented with PIN diodes and RF MEMS switches. The methodology for tuning SIW filters is explained in detail and is used to create three separate designs...

Armendariz, Marcelino

2012-02-14T23:59:59.000Z

23

LED Watch: The Outlook for OLEDs  

Broader source: Energy.gov [DOE]

December 2014 LED Watch: The Outlook for OLEDs James Brodrick, U.S. Department of Energy LD+A Magazine

24

Dual-band Composite Right/Left Hand Substrate Integrated Waveguide Leaky Wave Antenna Phased Array Design  

E-Print Network [OSTI]

Itoh and C. Caloz, "Composite right/left-handed transmissionY. Dong and T. Itoh, "Composite Right/Left-Handed SubstrateSubstrate Integrated Composite Right-/Left-Handed Leaky-Wave

Tanabe, Jordan Masao

2013-01-01T23:59:59.000Z

25

High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers  

E-Print Network [OSTI]

High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded Ge photodiodes on a graded optimized relaxed SiGe buffer on Si. The dark current in the Ge mesa are capable of operating at high frequencies 2.35 GHz . The photodiodes exhibit an external quantum efficiency

26

Antenna Advancement Techniques and Integration of RFID Electronics on Organic Substrates for UHF RFID Applications in  

E-Print Network [OSTI]

areas, such as item-level tracking, access control, electronic toll collection, automotive sensingAntenna Advancement Techniques and Integration of RFID Electronics on Organic Substrates for UHF RFID Applications in Automotive Sensing and Vehicle Security Li Yang, Amin Rida, Jiexin Li, and Manos M

Tentzeris, Manos

27

2250 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 9, SEPTEMBER 2006 Full-Color OLEDs Integrated by Dry Dye Printing  

E-Print Network [OSTI]

Integrated by Dry Dye Printing K. Long, Member, IEEE, F. Pschenitzka, M.-H. Lu, Member, IEEE, and James C. Sturm, Fellow, IEEE Abstract--Dry dye printing and solvent-enhanced dye dif- fusion were used to locally dope a previously spin-coated poly(9-vinylcarbazole) (PVK) polymer film with different dyes

28

Series connected OLED structure and fabrication method  

DOE Patents [OSTI]

A light emitting device comprises a plurality of organic light emitting diode (OLED) modules. The OLED modules are arranged into a series group where the individual OLED modules are electrically connected in series. The device is configured to be coupled to a power supply. A display is also provided. The display includes a plurality of OLED modules arranged to depict a shape selected from the group consisting of at least one letter, at least one number, at least one image, and a combination thereof.

Foust, Donald Franklin; Balch, Ernest Wayne; Duggal, Anil Raj; Heller, Christian Maria; Guida, Renato; Nealon, William Francis; Faircloth, Tami Janene

2006-05-23T23:59:59.000Z

29

Challenges in OLED Research and Development  

Broader source: Energy.gov [DOE]

View the video about OLED technology’s advantages and what is needed to move it fully into the lighting market.

30

Novel Low Cost Organic Vapor Jet Printing of Striped High Efficiency Phosphorescent OLEDs for White Lighting  

SciTech Connect (OSTI)

In this program, Universal Display Corporation and University of Michigan proposed to integrate three innovative concepts to meet the DOE's Solid State Lighting (SSL) goals: (1) high-efficiency phosphorescent organic light emitting device (PHOLED{trademark}) technology, (2) a white lighting design that is based on a series of red, green and blue OLED stripes, and (3) the use of a novel cost-effective, high rate, mask-less deposition process called organic vapor jet printing (OVJP). Our PHOLED technology offers up to four-times higher power efficiency than other OLED approaches for general lighting. We believe that one of the most promising approaches to maximizing the efficiency of OLED lighting sources is to produce stripes of the three primary colors at such a pitch (200-500 {mu}m) that they appear as a uniform white light to an observer greater than 1 meter (m) away from the illumination source. Earlier work from a SBIR Phase 1 entitled 'White Illumination Sources Using Striped Phosphorescent OLEDs' suggests that stripe widths of less than 500 {mu}m appear uniform from a distance of 1m without the need for an external diffuser. In this program, we intend to combine continued advances in this PHOLED technology with the striped RGB lighting design to demonstrate a high-efficiency, white lighting source. Using this background technology, the team has focused on developing and demonstrating the novel cost-effective OVJP process to fabricate these high-efficiency white PHOLED light sources. Because this groundbreaking OVJP process is a direct printing approach that enables the OLED stripes to be printed without a shadow mask, OVJP offers very high material utilization and high throughput without the costs and wastage associated with a shadow mask (i.e. the waste of material that deposits on the shadow mask itself). As a direct printing technique, OVJP also has the potential to offer ultra-high deposition rates (> 1,000 Angstroms/second) for any size or shaped features. As a result, we believe that this work will lead to the development of a cost-effective manufacturing solution to produce very-high efficiency OLEDs. By comparison to more common ink-jet printing (IJP), OVJP can also produce well-defined patterns without the need to pattern the substrate with ink wells or to dry/anneal the ink. In addition, the material set is not limited by viscosity and solvent solubility. During the program we successfully demonstrated a 6-inch x 6-inch PHOLED lighting panel consisting of fine-featured red, green and blue (R-G-B) stripes (1mm width) using an OVJP deposition system that was designed, procured and installed into UDC's cleanroom as part of this program. This project will significantly accelerate the DOE's ability to meet its 2015 DOE SSL targets of 70-150 lumens/Watt and less than $10 per 1,000 lumens for high CRI lighting index (76-90). Coupled with a low cost manufacturing path through OVJP, we expect that this achievement will enable the DOE to achieve its 2015 performance goals by the year 2013, two years ahead of schedule. As shown by the technical work performed under this program, we believe that OVJP is a very promising technology to produce low cost, high efficacy, color tunable light sources. While we have made significant progress to develop OVJP technology and build a pilot line tool to study basic aspects of the technology and demonstrate a lighting panel prototype, further work needs to be performed before its full potential and commercial viability can be fully assessed.

Mike Hack

2008-12-31T23:59:59.000Z

31

Method and system for evaluating integrity of adherence of a conductor bond to a mating surface of a substrate  

DOE Patents [OSTI]

A method of evaluating integrity of adherence of a conductor bond to a substrate includes: (a) impinging a plurality of light sources onto a substrate; (b) detecting optical reflective signatures emanating from the substrate from the impinged light; (c) determining location of a selected conductor bond on the substrate from the detected reflective signatures; (d) determining a target site on the selected conductor bond from the detected reflective signatures; (e) optically imparting an elastic wave at the target site through the selected conductor bond and into the substrate; (f) optically detecting an elastic wave signature emanating from the substrate resulting from the optically imparting step; and (g) determining integrity of adherence of the selected conductor bond to the substrate from the detected elastic wave signature emanating from the substrate. A system is disclosed which is capable of conducting the method. 13 figs.

Telschow, K.L.; Siu, B.K.

1996-07-09T23:59:59.000Z

32

Creation of a U.S. Phosphorescent OLED Lighting Panel Manufacturing Facility  

SciTech Connect (OSTI)

Universal Display Corporation (UDC) has pioneered high efficacy phosphorescent OLED (PHOLED™) technology to enable the realization of an exciting new form of high quality, energy saving solid-date lighting. In laboratory test devices, we have demonstrated greater than 100 lm/W conversion efficacy. In this program, Universal Display will demonstrate the scalability of its proprietary UniversalPHOLED technology and materials for the manufacture of white OLED lighting panels that meet commercial lighting targets. Moser Baer Technologies will design and build a U.S.- based pilot facility. The objective of this project is to establish a pilot phosphorescent OLED (PHOLED) manufacturing line in the U.S. Our goal is that at the end of the project, prototype lighting panels could be provided to U.S. luminaire manufacturers for incorporation into products to facilitate the testing of design concepts and to gauge customer acceptance, so as to facilitate the growth of the embryonic U.S. OLED lighting industry. In addition, the team will provide a cost of ownership analysis to quantify production costs including OLED performance metrics which relate to OLED cost such as yield, materials usage, cycle time, substrate area, and capital depreciation. This project was part of a new DOE initiative designed to help establish and maintain U.S. leadership in this program will support key DOE objectives by showing a path to meet Department of Energy Solid-State Lighting Manufacturing Roadmap cost targets, as well as meeting its efficiency targets by demonstrating the energy saving potential of our technology through the realization of greater than 76 lm/W OLED lighting panels by 2012.

Hack, Michael

2013-09-30T23:59:59.000Z

33

Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting  

SciTech Connect (OSTI)

Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exacerbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectronic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availability of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a clear focus on economics and the work plan focused both on doped ZnO process and OLED device structure that would be consistent with the new TCO. The team successfully made 6 inch OLEDs with a serial construction. More process development is required to optimize commercial OLED structures. Feasibility was demonstrated on two different light extraction technologies: 1/4 lambda refractive index matching and high-low-high band pass filter. Process development was also completed on the key precursors for the TCO, which are ready for pilot-plant scale-up. Subsequently, Arkema has developed a cost of ownership model that is consistent with DOE SSL R&D Manufacturing targets as outlined in the DOE SSL R&D Manufacturing 2010 report. The overall outcome of this project was the demonstration that doped zinc oxide can be used for OLED devices without a drop-off in performance while gaining the economic and sustainable benefits of a more readily available TCO. The broad impact of this project, is the facilitation of OLED lighting market penetration into general illumination, resulting in significant energy savings, decreased greenhouse emissions, with no environmental impact issues such as mercury found in Fluorescent technology. The primary objective of this project was to develop a commercially viable process for 'Substrates' (Substrate/ undercoat/ TCO topcoat) to be used in production of OLED devices (lamps/luminaries/modules). This project focused on using Arkema's recently developed doped ZnO technology for the Fenestration industry and applying the technology to the OLED lighting industry. The secondary objective was the use of undercoat technology to improve light extraction from the OLED device. In optical fields and window applications, technology has been developed to mitigate reflection losses by selecting appropriate thicknesses and refractive indices of coatings applied either below or above the functional layer of interest. This technology has been proven and implemented in the fenestration industry for more than 15 years. Successful completion of

Martin Bluhm; James Coffey; Roman Korotkov; Craig Polsz; Alexandre Salemi; Robert Smith; Ryan Smith; Jeff Stricker; Chen Xu; Jasmine Shirazi; George Papakonstantopulous; Steve Carson; Claudia Goldman; Soren Hartmann; Frank Jessen; Bianca Krogmann; Christoph Rickers; Manfred Ruske; Holger Schwab; Dietrich Bertram

2011-01-02T23:59:59.000Z

34

Text-Alternative Version: Challenges in OLED Research and Development  

Broader source: Energy.gov [DOE]

Narrator: Organic light-emitting diodes, OLEDs, are made using organic carbon-based materials. Unlike LEDs, which are small point light sources, OLEDs are made in sheets that create diffuse area...

35

Low Voltage White Phosphorescent OLED Achievements  

Broader source: Energy.gov [DOE]

Universal Display Corporation (UDC) and its research partners at Princeton University and the University of Southern California have succeeded in developing a white phosphorescent OLED (PHOLED™) that achieved a record efficiency of 20 lumens per watt. This achievement is the result of the team's collaborative efforts to increase the efficiency of PHOLED lighting by focusing on two critical factors: lowering the drive voltages and increasing the amount of light extracted.

36

Record External Quantum Efficiency in Blue OLED Device  

Broader source: Energy.gov [DOE]

Scientists at Pacific Northwest National Laboratory (PNNL) have created a blue organic light emitting diode (OLED) with an external quantum efficiency (EQE) of 11% at 800 cd/m2, exceeding their previous record EQE of 8%. The EQE of blue OLEDs is a major challenge in OLED technology development. This achievement is particularly notable since it was accomplished at a much lower operating voltage (6.2V) than previous demonstrations using similar structures, revealing the potential for much higher power efficiencies.

37

OLED Display with Single Grain Si TFT. (SG-TFT):.  

E-Print Network [OSTI]

??OLED is a current based device, which emitted amount of light depends on the current supplied to the device so steady current flow is needed.… (more)

Naeimi, A.

2011-01-01T23:59:59.000Z

38

OLED Manufacture Challenge: Strategy for Cost Reduction and Yield...  

Energy Savers [EERE]

activity in China will help to leverage the fund for potential market of OLED lighting: Eye-shielding Lamps for Children Shadowless Surgical Operating Lamp New Construction Design...

39

Spectrally narrowed leaky waveguide edge emission and transient electrluminescent dynamics of OLEDs  

SciTech Connect (OSTI)

In summary, there are two major research works presented in this dissertation. The first research project (Chapter 4) is spectrally narrowed edge emission from Organic Light Emitting Diodes. The second project (Chapter 5) is about transient electroluminescent dynamics in OLEDs. Chapter 1 is a general introduction of OLEDs. Chapter 2 is a general introduction of organic semiconductor lasers. Chapter 3 is a description of the thermal evaporation method for OLED fabrication. The detail of the first project was presented in Chapter 4. Extremely narrowed spectrum was observed from the edge of OLED devices. A threshold thickness exists, above which the spectrum is narrow, and below which the spectrum is broad. The FWHM of spectrum depends on the material of the organic thin films, the thickness of the organic layers, and length of the OLED device. A superlinear relationship between the output intensity of the edge emission and the length of the device was observed, which is probably due to the misalignment of the device edge and the optical fiber detector. The original motivation of this research is for organic semiconductor laser that hasn't been realized due to the extremely high photon absorption in OLED devices. Although we didn't succeed in fabricating an electrically pumped organic laser diode, we made a comprehensive research in edge emission of OLEDs which provides valuable results in understanding light distribution and propagation in OLED devices. Chapter 5 focuses on the second project. A strong spike was observed at the falling edge of a pulse, and a long tail followed. The spike was due to the recombination of correlated charge pair (CCP) created by trapped carriers in guest molecules of the recombination zone. When the bias was turned off, along with the decreasing of electric field in the device, the electric field induced quenching decreases and the recombination rate of the CCP increases which result in the spike. This research project provides a profound understanding of the EL dynamics of OLED, and the theoretical model can fit and explain the experiment data quite well. For the edge emission, we focused on the spectrum and the relative intensity of the edge emission. In the future, more research can be done on the comparison of the intensity between the total edge emission and the surface emission which will give us a sense what fraction of light was trapped in the device. Micro structures can be integrated into the OLED such as DFB and DBR, the character of edge emission should be very interesting. For the transient spike, the CCP model can give a good explanation. But in the model, the effect of the electric field change is not included, because from the start point (t=0), we assume the mobility of carriers is a constant. If we consider the details of the change of the electric field, then when turning of the bias, the decrease of the electric field results in decrease of the carrier mobility and the dissociation rate. If we can add the electric field effect into the model, the whole theory will be more convincing.

Zhengqing, Gan

2010-05-16T23:59:59.000Z

40

Solution-Processable Transparent Conductive Hole Injection Electrode for OLED SSL  

SciTech Connect (OSTI)

An interconnected network of silver nanowires has been used as transparent anode in OLED devices. This layer was deposited by spin-coating and slot-die coating from an aqueous nanowire suspension. The sheet resistance of the film was 10ohms/sq with a transmission (including the glass substrate) of higher than 85%. The first phase of the project focused on the implementation of this nanowire layer with a hole-injection-layer (HIL) which has been developed at Plextronics and has been shown to provide good stability and efficiency in conventional OLED devices. We modified the HIL solution such that it coated reasonably well with suitable surface morphology so that actual devices can be manufactured. During the second phase we investigated the hole-injection and stability of hole-onlydevices. We determined that the use of the nanowire network as anode does not introduce an additional degradation mechanism since the observed device characteristics did not differ from those made with ITO anode. We then proceeded to make actual OLED devices with this nanowire / HIL stack and achieved device characteristics similar state-of-the-art OLED devices with a single junction. In order to gain traction with potential OLED manufacturers, we decided to contract Novaled to prepare large-area demonstrators for us. For these devices, we used an allevaporated stack, i.e. we did use Novaledâ??s HIL material instead of Plextronicsâ??. We successfully fabricated demonstrators with an area of 25cm2 with a double or triple junction stack. Minor stack optimizations were necessary to achieve efficacies and lifetime equivalent with ITO devices made with the same devices stack. Due to the reduced microcavity effect, the color of the emitted light is significantly more stable with respect to the viewing angle compared to ITO devices. This fact in conjunction with the promise of lower production cost due to the elimination of the ITO sputtering process and the direct patterning of the anode layer are the obvious advantages of this technology. The project has shown that this nanowire technology is a viable option to achieve OLED devices with good lifetime and efficiency and we are currently working with manufacturers to utilize this technology in a production setting.

None

2012-07-15T23:59:59.000Z

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

OLED Stakeholder Meeting Report | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Careerlumens_placard-green.epsEnergy Second Quarter4,(National Renewable2014)OLED Stakeholder

42

Monolithic heteroepitaxial integration of III-V semiconductor lasers on Si substrates  

E-Print Network [OSTI]

Monolithic optoelectronic integration on silicon-based integrated circuits has to date been limited to date by the large material differences between silicon (Si) and the direct-bandgap GaAs compounds from which optoelectronic ...

Groenert, Michael

2002-01-01T23:59:59.000Z

43

High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate  

E-Print Network [OSTI]

We present recent results on the direct heterogeneous integration of InP HBTs and Si CMOS on a silicon template wafer or SOLES (Silicon On Lattice Engineered Substrate). InP HBTs whose performance are comparable to HBTs ...

Kazior, T. E.

44

World Record White OLED Performance Exceeds 100 lm/W  

Broader source: Energy.gov [DOE]

Universal Display Corporation (UDC) has successfully demonstrated a record-breaking white organic light-emitting diode (WOLED) with a power efficacy of 102 lm/W at 1000 cd/m2 using its proprietary, high-efficiency phosphorescent OLED technology. This achievement represents a significant milestone for OLED technology, demonstrating performance that surpasses the power efficacy of incandescent bulbs with less than 15 lm/W and fluorescent lamps at 60-90 lm/W. Funded in part by DOE, UDC's achievement is a major step toward DOE's roadmap goal of a 150 lm/W commercial OLED light source by 2015.

45

Polymer OLED White Light Development Program  

SciTech Connect (OSTI)

OSRAM Opto Semiconductors (OSRAM) successfully completed development, fabrication and characterization of the large area, polymer based white light OLED prototype at their OLED Research and Development (R&D) facility in San Jose, CA. The program, funded by the Department of Energy (DOE), consisted of three key objectives: (1) Develop new polymer materials and device architectures--in order to improve the performance of organic light emitters. (2) Develop processing techniques--in order to demonstrate and enable the manufacturing of large area, white light and color tunable, solid state light sources. (3) Develop new electronics and driving schemes for organic light sources, including color-tunable light sources. The key performance goals are listed. A world record efficiency of 25 lm/W was established for the solution processed white organic device from the significant improvements made during the project. However, the challenges to transfer this technology from an R&D level to a large tile format such as, the robustness of the device and the coating uniformity of large area panels, remain. In this regard, the purity and the blend nature of the materials are two factors that need to be addressed in future work. During the first year, OSRAM's Materials and Device group (M&D) worked closely with the major polymer material suppliers to develop the polymer emissive technology. M&D was successful in demonstrating a 7-8 lm/W white light source which was based on fluorescent materials. However, it became apparent that the major gains in efficiency could only be made if phosphorescent materials were utilized. Thus, in order to improve the performance of the resulting devices, the focus of the project shifted towards development of solution-processable phosphorescent light emitting diodes (PHOLEDs) and device architectures. The result is a higher efficiency than the outlined project milestone.

Homer Antoniadis; Vi-En Choong; Stelios Choulis; Brian Cumpston; Rahul Gupta; Mathew Mathai; Michael Moyer; Franky So

2005-12-19T23:59:59.000Z

46

Security Implications of OPC, OLE, DCOM, and RPC in Control Systems  

SciTech Connect (OSTI)

OPC is a collection of software programming standards and interfaces used in the process control industry. It is intended to provide open connectivity and vendor equipment interoperability. The use of OPC technology simplifies the development of control systems that integrate components from multiple vendors and support multiple control protocols. OPC-compliant products are available from most control system vendors, and are widely used in the process control industry. OPC was originally known as OLE for Process Control; the first standards for OPC were based on underlying services in the Microsoft Windows computing environment. These underlying services (OLE [Object Linking and Embedding], DCOM [Distributed Component Object Model], and RPC [Remote Procedure Call]) have been the source of many severe security vulnerabilities. It is not feasible to automatically apply vendor patches and service packs to mitigate these vulnerabilities in a control systems environment. Control systems using the original OPC data access technology can thus inherit the vulnerabilities associated with these services. Current OPC standardization efforts are moving away from the original focus on Microsoft protocols, with a distinct trend toward web-based protocols that are independent of any particular operating system. However, the installed base of OPC equipment consists mainly of legacy implementations of the OLE for Process Control protocols.

Not Available

2006-01-01T23:59:59.000Z

47

New Efficiency Record Achieved for White OLED Device  

Broader source: Energy.gov [DOE]

Osram Opto-Semiconductors, Inc. has successfully demonstrated a white organic light emitting diode (OLED) with a record efficiency of 25 lumens per watt, the highest known efficiency achieved to date for a polymer-based white OLED. The 25 LPW cool-white-emitting device was produced by applying a standard external inorganic phosphor to Osram's record-breaking blue-emitting phosphorescent polymer device with a peak luminous efficacy of 14 LPW.

48

GreenVis: Energy-Saving Color Schemes for Sequential Data Visualization on OLED Displays  

E-Print Network [OSTI]

North Virginia Tech Blacksburg, VA north@cs.vt.edu ABSTRACT The organic light emitting diode (OLED, Color Scheme, Visualization 1. INTRODUCTION The organic light-emitting diode (OLED) display is an emerg

49

A silicon current sensing amplifier and organic imager for an optical feedback OLED display  

E-Print Network [OSTI]

Organic LEDs (OLEDs) have the potential to be used to build thin, flexible cost effective displays. Currently, the primary drawback to their usage lies in the difficulty of producing OLEDs that emit light at a constant and ...

Lin, Albert, M. Eng. Massachusetts Institute of Technology

2006-01-01T23:59:59.000Z

50

A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates  

E-Print Network [OSTI]

We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um2 emitter) with ft and fmax > 200 GHz were grown directly in windows adjacent to CMOS ...

Bulsara, Mayank

51

Numerical analysis of nanostructures for enhanced light extraction from OLEDs  

E-Print Network [OSTI]

Nanostructures, like periodic arrays of scatters or low-index gratings, are used to improve the light outcoupling from organic light-emitting diodes (OLED). In order to optimize geometrical and material properties of such structures, simulations of the outcoupling process are very helpful. The finite element method is best suited for an accurate discretization of the geometry and the singular-like field profile within the structured layer and the emitting layer. However, a finite element simulation of the overall OLED stack is often beyond available computer resources. The main focus of this paper is the simulation of a single dipole source embedded into a twofold infinitely periodic OLED structure. To overcome the numerical burden we apply the Floquet transform, so that the computational domain reduces to the unit cell. The relevant outcoupling data are then gained by inverse Flouqet transforming. This step requires a careful numerical treatment as reported in this paper.

Zschiedrich, L; Burger, S; Schmidt, F; 10.1117/12.2001132

2013-01-01T23:59:59.000Z

52

UDC Develops Prototype High-Efficiency OLED Undercabinet Luminaire  

Broader source: Energy.gov [DOE]

Universal Display Corporation (UDC) has demonstrated the real-world application of a novel lighting technology by developing two pre-prototype OLED undercabinet lighting systems that exceed 420 total lumens at an efficacy of more than 55 lm/W, with an estimated lifetime (LT70) in excess of 10,000 hours, and a color rendering index (CRI) greater than 85.

53

Late Quaternary history of Washington Land, North Greenland OLE BENNIKE  

E-Print Network [OSTI]

Late Quaternary history of Washington Land, North Greenland OLE BENNIKE Bennike, O. 2002 (September): Late Quaternary history of Washington Land, North Greenland. Boreas, Vol. 31, 260­272. Oslo. ISSN 0300-9483. During the last glacial stage, Washington Land in western North Greenland was probably completely inun

Ingólfsson, Ólafur

54

Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth  

DOE Patents [OSTI]

There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

2013-02-19T23:59:59.000Z

55

Low Power, Red, Green and Blue Carbon Nanotube Enabled Vertical Organic Light Emitting Transistors for Active Matrix OLED Displays  

SciTech Connect (OSTI)

Organic semiconductors are potential alternatives to polycrystalline silicon as the semiconductor used in the backplane of active matrix organic light emitting diode displays. Demonstrated here is a light-emitting transistor with an organic channel, operating with low power dissipation at low voltage, and high aperture ratio, in three colors: red, green and blue. The single-wall carbon nanotube network source electrode is responsible for the high level of performance demonstrated. A major benefit enabled by this architecture is the integration of the drive transistor, storage capacitor and light emitter into a single device. Performance comparable to commercialized polycrystalline-silicon TFT driven OLEDs is demonstrated.

McCarthy, M. A. [University of Florida, Gainesville; Liu, B. [University of Florida, Gainesville; Donoghue, E. P. [University of Florida, Gainesville; Kravchenko, Ivan I [ORNL; Kim, D. Y. [University of Florida, Gainesville; So, Franky [University of Florida, Gainesville; Rinzler, A. G. [University of Florida, Gainesville

2011-01-01T23:59:59.000Z

56

GEA Refrigeration Technologies / GEA Refrigeration Germany GmbH Wolfgang Dietrich / Dr. Ole Fredrich  

E-Print Network [OSTI]

GEA Refrigeration Technologies / GEA Refrigeration Germany GmbH Wolfgang Dietrich / Dr. Ole Technologies3 Achema 2012 // heat pumps using ammonia Industrial demand on heat in Germany Heatdemandin

Oak Ridge National Laboratory

57

Large grain Ge growth on amorphous substrates for CMOS back-end-of-line integration of active optoelectronic devices  

E-Print Network [OSTI]

The electronic-photonic integrated circuit (EPIC) has emerged as a leading technology to surpass the interconnect bottlenecks that threaten to limit the progress of Moore's Law in microprocessors. Compared to conventional ...

Pearson, Brian (Brian Sung-Il)

2012-01-01T23:59:59.000Z

58

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si  

SciTech Connect (OSTI)

We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In{sub 0.53}Ga{sub 0.47}As (InGaAs) active layer is equal to 3.5 × 10{sup 9} cm{sup ?2}, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm{sup 2}/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000–3000 cm{sup 2}/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

Daix, N., E-mail: dai@zurich.ibm.com; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Fompeyrine, J. [IBM Research - Zürich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Hartmann, J. M. [CEA, LETI 17, rue des Martyrs, F-38054 Grenoble (France); Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D. [IBM T. J. Watson Research Center, 1101 Kitchawan Rd., Route 134 Yorktown Heights, New York 10598 (United States)

2014-08-01T23:59:59.000Z

59

Electroluminescence property of organic light emitting diode (OLED)  

SciTech Connect (OSTI)

Transport properties of electrons and holes were investigated not only in a anthracene-containing poly(p-phenylene-ethynylene)- alt - poly(p-phenylene-vinylene) (PPE-PPV) polymer (AnE-PVstat) light emitting diodes (OLED) but also in an ITO/Ag/polymer/Ag electron and ITO/PEDOT:PSS/polymer/Au hole only devices. Mobility of injected carriers followed the Poole-Frenkel type conduction mechanism and distinguished in the frequency range due to the difference of transit times in admittance measurement. Beginning of light output took place at the turn-on voltage (or flat band voltage), 1.8 V, which was the difference of energy band gap of polymer and two barrier offsets between metals and polymer.

Özdemir, Orhan; Kavak, Pelin; Saatci, A. Evrim; Gökdemir, F. P?nar; Menda, U. Deneb; Can, Nursel; Kutlu, Kubilay [Y?ld?z Technical University, Department of Physics, Esenler, Istanbul (Turkey); Tekin, Emine; Pravadal?, Selin [National Metrology Inst?tute of Turkey (TUB?TAK-UME), Kocaeli (Turkey)

2013-12-16T23:59:59.000Z

60

Compact and efficient method of RGB to RGBW data conversion for OLED microdisplays   

E-Print Network [OSTI]

Colour Electronic Information Displays (EIDs) typically consist of pixels that are made up of red, green and blue (RGB) subpixels. A recent technology, Organic Light Emitting Diode (OLED), offers the potential to create ...

Can, Chi

2012-06-25T23:59:59.000Z

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Achieving Record Efficiency for Blue OLEDs by Controlling the Charge Balance  

Broader source: Energy.gov [DOE]

Researchers at the University of Florida (UF) have demonstrated a blue phosphorescent organic light-emitting diode (OLED) with a peak power efficiency of 50 lm/W and an external quantum efficiency exceeding 20 percent at a luminance of 1,000 cd/m2, using no external light extraction techniques. This accomplishment is believed to be the world record in blue OLED efficiency.

62

Organic Light-Emitting Diodes (OLEDs) and Optically-Detected Magnetic Resonance (ODMR) studies on organic materials  

SciTech Connect (OSTI)

Organic semiconductors have evolved rapidly over the last decades and currently are considered as the next-generation technology for many applications, such as organic light-emitting diodes (OLEDs) in flat-panel displays (FPDs) and solid state lighting (SSL), and organic solar cells (OSCs) in clean renewable energy. This dissertation focuses mainly on OLEDs. Although the commercialization of the OLED technology in FPDs is growing and appears to be just around the corner for SSL, there are still several key issues that need to be addressed: (1) the cost of OLEDs is very high, largely due to the costly current manufacturing process; (2) the efficiency of OLEDs needs to be improved. This is vital to the success of OLEDs in the FPD and SSL industries; (3) the lifetime of OLEDs, especially blue OLEDs, is the biggest technical challenge. All these issues raise the demand for new organic materials, new device structures, and continued lower-cost fabrication methods. In an attempt to address these issues, we used solution-processing methods to fabricate highly efficient small molecule OLEDs (SMOLEDs); this approach is costeffective in comparison to the more common thermal vacuum evaporation. We also successfully made efficient indium tin oxide (ITO)-free SMOLEDs to further improve the efficiency of the OLEDs. We employed the spin-dependent optically-detected magnetic resonance (ODMR) technique to study the luminescence quenching processes in OLEDs and organic materials in order to understand the intrinsic degradation mechanisms. We also fabricated polymer LEDs (PLEDs) based on a new electron-accepting blue-emitting polymer and studied the effect of molecular weight on the efficiency of PLEDs. All these studies helped us to better understand the underlying relationship between the organic semiconductor materials and the OLEDs’ performance, and will subsequently assist in further enhancing the efficiency of OLEDs. With strongly improved device performance (in addition to other OLEDs' attributes such as mechanical flexibility and potential low cost), the OLED technology is promising to successfully compete with current technologies, such as LCDs and inorganic LEDs.

Cai, Min

2011-11-30T23:59:59.000Z

63

Effects of low temperature annealing on the adhesion of electroless plated copper thin films in TiN deposited silicon integrated circuit substrates  

E-Print Network [OSTI]

and temperature on adhesion for plated substrate sample A. . . . . . 27 2. Effect of anneal time and temperature on adhesion for plated substrate sample B. 3. Effect of anneal time and temperature on adhesion for plated substrate sample C 29 4. Effect... as an interconnect materiaL A bonus effect of the choice of copper over aluminum is copper's lower resistivity (for thin Sm Cu, p = 2. 0 le-cm; for thin Em Al, p = 2. 7-3, 0 ltI2-cm [2, 3]). The change to copper allows manufacturers to take advantage of copper...

Tate, Adam Timothy

2013-02-22T23:59:59.000Z

64

Permanent polarization and charge distribution in organic light-emitting diodes (OLEDs): Insights from near-infrared charge-modulation spectroscopy of an operating OLED  

SciTech Connect (OSTI)

Vapor-deposited Alq{sub 3} layers typically possess a strong permanent electrical polarization, whereas NPB layers do not. (Alq{sub 3} is tris(8-quinolinolato)aluminum(III); NPB is 4,4?-bis[N-(1-naphthyl)-N-phenylamino]biphenyl.) The cause is a net orientation of the Alq{sub 3} molecules with their large dipole moments. Here we report on consequences for an organic light-emitting diode (OLED) with an NPB hole-transport layer and Alq{sub 3} electron-transport layer. The discontinuous polarization at the NPB|Alq{sub 3} interface has the same effect as a sheet of immobile negative charge there. It is more than compensated by a large concentration of injected holes (NPB{sup +}) when the OLED is running. We discuss the implications and consequences for the quantum efficiency and the drive voltage of this OLED and others. We also speculate on possible consequences of permanent polarization in organic photovoltaic devices. The concentration of NPB{sup +} was measured by charge-modulation spectroscopy (CMS) in the near infrared, where the NPB{sup +} has a strong absorption band, supplemented by differential-capacitance and current-voltage measurements. Unlike CMS in the visible, this method avoids complications from modulation of the electroluminescence and electroabsorption.

Marchetti, Alfred P.; Haskins, Terri L.; Young, Ralph H.; Rothberg, Lewis J. [Department of Chemistry, University of Rochester, Rochester, New York 14627 (United States)

2014-03-21T23:59:59.000Z

65

Resonance et contr^ole en cavite ouverte Jer^ome Hoepffner  

E-Print Network [OSTI]

R´esonance et contr^ole en cavit´e ouverte J´er^ome Hoepffner KTH, Sweden Avec Espen °Akervik, Uwe) From Rowley et al, JFM 2002 Self sustained cycle: perturbation growth pressure wave new perturbation localised and where are they sensitive ? #12;Optimal transient energy growth from initial conditions System

Hoepffner, Jérôme

66

Chameleon: A Color-Adaptive Web Browser for Mobile OLED Displays  

E-Print Network [OSTI]

transformation, low power 1. Introduction Displays are known to be among the largest power-consuming components devices. Unlike liquid crystal displays (LCD), OLED displays consume dramatically different power browser that renders web pages with power-optimized color schemes under user-supplied constraints. Driven

Zhong, Lin

67

Integration of GaAsP alloys on SiGe virtual substrates for Si-based dual-junction solar cells  

E-Print Network [OSTI]

Integration of III-V compound semiconductors with silicon is an area that has generated a lot of interest because III-V materials and Si are best suited for different types of devices. Monolithic integration enables the ...

Sharma, Prithu

2013-01-01T23:59:59.000Z

68

Application of Developed APCVD Transparent Conducting Oxides and Undercoat Technologies for Economical OLED Lighting  

SciTech Connect (OSTI)

Economics is a key factor for application of organic light emitting diodes (OLED) in general lighting relative to OLED flat panel displays that can handle high cost materials such as indium tin oxide (ITO) or Indium zinc oxide (IZO) as the transparent conducting oxide (TCO) on display glass. However, for OLED lighting to penetrate into general illumination, economics and sustainable materials are critical. The issues with ITO have been documented at the DOE SSL R&D and Manufacturing workshops for the last 5 years and the issue is being exaserbated by export controls from China (one of the major sources of elemental indium). Therefore, ITO is not sustainable because of the fluctuating costs and the United States (US) dependency on other nations such as China. Numerous alternatives to ITO/IZO are being evaluated such as Ag nanoparticles/nanowires, carbon nanotubes, graphene, and other metal oxides. Of these other metal oxides, doped zinc oxide has attracted a lot of attention over the last 10 years. The volume of zinc mined is a factor of 80,000 greater than indium and the US has significant volumes of zinc mined domestically, resulting in the ability for the US to be self-sufficient for this element that can be used in optoelectonic applications. The costs of elemental zinc is over 2 orders of magnitude less than indium, reflecting the relative abundance and availablility of the elements. Arkema Inc. and an international primary glass manufacturing company, which is located in the United States, have developed doped zinc oxide technology for solar control windows. The genesis of this DOE SSL project was to determine if doped zinc oxide technology can be taken from the commodity based window market and translate the technology to OLED lighting. Thus, Arkema Inc. sought out experts, Philips Lighting, Pacific Northwest National Laboratories (PNNL) and National Renewable Research Laboratories (NREL), in OLED devices and brought them into the project. This project had a clear focus on economics and the work plan focused both on doped ZnO process and OLED device structure that would be consistent with the new TCO. The team successfully made 6 inch OLEDs with a serial construction. More process development is required to optimize commercial OLED structures. Feasibility was demonstrated on two different light extraction technologies: 1/4 lambda refractive index matching and high-low-high band pass filter. Process development was also completed on the key precursors for the TCO, which are ready for pilot-plant scale-up. Subsequently, Arkema has developed a cost of ownership model that is consistent with DOE SSL R&D Manufacturing targets as outlined in the DOE SSL R&D Manufacturing 2010 report. The overall outcome of this project was the demonstration that doped zinc oxide can be used for OLED devices without a drop-off in performance while gaining the economic and sustainable benefits of a more readily available TCO. The broad impact of this project, is the facilitation of OLED lighting market penetration into general illumination, resulting in significant energy savings, decreased greenhouse emissions, with no environmental impact issues such as mercury found in Fluorescent technology.

Gary Silverman; Bluhm, Martin; Coffey, James; Korotkov, Roman; Polsz, Craig; Salemi, Alexandre; Smith, Robert; Smith, Ryan; Stricker, Jeff; Xu,Chen; Shirazi, Jasmine; Papakonstantopulous, George; Carson, Steve Philips Lighting GmbH Goldman, Claudia; Hartmann, Sören; Jessen, Frank; Krogmann, Bianca; Rickers, Christoph; Ruske, Manfred, Schwab, Holger; Bertram, Dietrich

2011-01-02T23:59:59.000Z

69

Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate  

DOE Patents [OSTI]

Accessing a workpiece object in semiconductor processing is disclosed. The workpiece object includes a mechanical support substrate, a release layer over the mechanical support substrate, and an integrated circuit substrate coupled over the release layer. The integrated circuit substrate includes a device layer having semiconductor devices. The method also includes etching through-substrate via (TSV) openings through the integrated circuit substrate that have buried ends at or within the release layer including using the release layer as an etch stop. TSVs are formed by introducing one or more conductive materials into the TSV openings. A die singulation trench is etched at least substantially through the integrated circuit substrate around a perimeter of an integrated circuit die. The integrated circuit die is at least substantially released from the mechanical support substrate.

Okandan, Murat; Nielson, Gregory N

2014-12-09T23:59:59.000Z

70

Molecular Orbital Study of the First Excited State of the OLED Material Tris(8-hydroxyquinoline)aluminum(III)  

E-Print Network [OSTI]

Molecular Orbital Study of the First Excited State of the OLED Material Tris(8-hydroxyquinoline)aluminum, Michigan 48202 Received February 6, 2001. Revised Manuscript Received May 16, 2001 Tris(8-hydroxyquinoline)aluminum

Schlegel, H. Bernhard

71

Solution-Procesed Small-Molecule OLED Luminaire for Interior Illumination  

SciTech Connect (OSTI)

Prototype lighting panels and luminaires were fabricated using DuPont Displaysâ?? solution-processed small-molecule OLED technology. These lighting panels were based on a spatially-patterned, 3-color design, similar in concept to an OLED display panel, with materials chosen to maximize device efficacy. The majority of the processing steps take place in air (rather than high vacuum). Optimization of device architecture, processing and construction was undertaken, with a final prototype design of 50 cm{sup 2} being fabricated and tested. Performance of these panels reached 35 lm/W at illuminant-A. A unique feature of this technology is the ability to color tune the emission, and color temperatures ranging from 2700 to > 6,500K were attained in the final build. Significant attention was paid to low-cost fabrication techniques.

Parker, Ian

2012-02-29T23:59:59.000Z

72

Stacked white OLED having separate red, green and blue sub-elements  

DOE Patents [OSTI]

The present invention relates to efficient organic light emitting devices (OLEDs). The devices employ three emissive sub-elements, typically emitting red, green and blue, to sufficiently cover the visible spectrum. Thus, the devices may be white-emitting OLEDs, or WOLEDs. Each sub-element comprises at least one organic layer which is an emissive layer--i.e., the layer is capable of emitting light when a voltage is applied across the stacked device. The sub-elements are vertically stacked and are separated by charge generating layers. The charge-generating layers are layers that inject charge carriers into the adjacent layer(s) but do not have a direct external connection.

Forrest, Stephen; Qi, Xiangfei; Slootsky, Michael

2014-07-01T23:59:59.000Z

73

Spontaneous fluctuations of transition dipole moment orientation in OLED triplet emitters  

E-Print Network [OSTI]

The efficiency of an organic light-emitting diode (OLED) depends on the microscopic orientation of transition dipole moments of the molecular emitters. The most effective materials used for light generation have threefold symmetry, which prohibit a priori determination of dipole orientation due to the degeneracy of the fundamental transition. Single-molecule spectroscopy reveals that the model triplet emitter tris(2-phenylisoquinoline)iridium(III) (Ir(piq)3) does not behave as a linear dipole, radiating with lower polarization anisotropy than expected. Spontaneous symmetry breaking occurs in the excited state, leading to a random selection of one of the three ligands to form a charge transfer state with the metal. This non-deterministic localization is revealed in switching of the degree of linear polarization of phosphorescence. Polarization scrambling likely raises out-coupling efficiency and should be taken into account when deriving molecular orientation of the guest emitter within the OLED host from ense...

Steiner, Florian; Vogelsang, Jan; Lupton, John M

2015-01-01T23:59:59.000Z

74

CX-010824: Categorical Exclusion Determination | Department of...  

Broader source: Energy.gov (indexed) [DOE]

Categorical Exclusion Determination Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07302013 Location(s):...

75

CX-010821: Categorical Exclusion Determination | Department of...  

Broader source: Energy.gov (indexed) [DOE]

Categorical Exclusion Determination Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07302013 Location(s):...

76

CX-010823: Categorical Exclusion Determination | Department of...  

Broader source: Energy.gov (indexed) [DOE]

Categorical Exclusion Determination Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07302013 Location(s):...

77

CX-010822: Categorical Exclusion Determination | Department of...  

Broader source: Energy.gov (indexed) [DOE]

Categorical Exclusion Determination Manufacturing Process for Organic Light-Emitting Diode (OLED) Integrated Substrate CX(s) Applied: B3.6 Date: 07302013 Location(s):...

78

Roll-To-Roll Process for Transparent Metal Electrodes in OLED Manufacturing  

SciTech Connect (OSTI)

This program will develop and demonstrate a new manufacturing technology that can help to improve the efficiency and reduce the cost of producing the next generation solid-state lighting (OLEDs)for a broad range of commercial applications. This will not only improve US competitiveness in the manufacturing sector but will also result in a positive impact in meeting the Department of Energy’s goal of developing high efficiency lighting while reducing the environmental impact.

Slafer, W. Dennis

2010-06-02T23:59:59.000Z

79

Suppression of Ge-O And Ge-N Bonding at Ge-HfO(2) And Ge-TiO(2) Interfaces By Deposition Onto Plasma-Nitrided Passivated Ge Substrates: Integration Issues Ge Gate Stacks Into Advanced Devices  

SciTech Connect (OSTI)

A study of changes in nano-scale morphology of thin films of nano-crystalline transition metal (TM) elemental oxides, HfO{sub 2} and TiO{sub 2}, on plasma-nitrided Ge(100) substrates, and Si(100) substrates with ultra-thin (-0.8 nm) plasma-nitrided Si suboxide, SiO{sub x}, x < 2, or SiON interfacial layers is presented. Near edge X-ray absorption spectroscopy (NEXAS) has been used to determine nano-scale morphology of these films by Jahn-Teller distortion removal of band edge d-state degeneracies. These results identify a new and novel application for NEXAS based on the resonant character of the respective O K{sub 1} and N K{sub 1} edge absorptions. This paper also includes a brief discussion of the integration issues for the introduction of this Ge breakthrough into advanced semiconductor circuits and systems. This includes a comparison of nano-crystalline and non-crystalline dielectrics, as well as issues relative to metal gates.

Lee, S.; Long, J.P.; Lucovsky, G.; Whitten, J.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

80

Power electronics substrate for direct substrate cooling  

DOE Patents [OSTI]

Systems and apparatus are provided for power electronics substrates adapted for direct substrate cooling. A power electronics substrate comprises a first surface configured to have electrical circuitry disposed thereon, a second surface, and a plurality of physical features on the second surface. The physical features are configured to promote a turbulent boundary layer in a coolant impinged upon the second surface.

Le, Khiet (Mission Viejo, CA); Ward, Terence G. (Redondo Beach, CA); Mann, Brooks S. (Redondo Beach, CA); Yankoski, Edward P. (Corona, CA); Smith, Gregory S. (Woodland Hills, CA)

2012-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

DuPont Displays Develops Low-Cost Method of Printing OLED Panels  

Broader source: Energy.gov [DOE]

DuPont Displays Inc. (DDI) has developed a novel way of printing color-tunable OLED lighting panels that keeps manufacturing costs low. The method involves processing the organic layers from solution, with most of the process steps taking place under atmospheric conditions rather than in a high vacuum. Industry-standard slot-coating methods are used in conjunction with nozzle printing—in which the solutions of organic materials are continuously jetted through an array of nozzles moving at high speed—allowing the light-emitting materials to be spatially patterned.

82

Fabrication of the ZnO thin films using wet-chemical etching processes on application for organic light emitting diode (OLED) devices  

E-Print Network [OSTI]

- sively used in solar cells, touch panels, heat mirrors, organic electro- luminescence devices (OLED), for example, has been commercially used in OLEDs. However, because of the cost and the scarcity of indium reactants and produce new species. Wet-chemical etching has great advantages such as low cost

Boo, Jin-Hyo

83

Solvent-enhanced Dye Diffusion in Polymer This-Films for OLED Application F. Pschenitzka, K. Long, and J. C. Sturm  

E-Print Network [OSTI]

Solvent-enhanced Dye Diffusion in Polymer This-Films for OLED Application F. Pschenitzka, K. Long (POEM), Princeton University, Princeton, NJ 08544 ABSTRACT A method of solvent-enhanced dye diffusion in polymer films for organic light-emitting diode (OLED) application is introduced. After an initial dye

84

Hybrid stretchable circuits on silicone substrate  

SciTech Connect (OSTI)

When rigid and stretchable components are integrated onto a single elastic carrier substrate, large strain heterogeneities appear in the vicinity of the deformable-non-deformable interfaces. In this paper, we report on a generic approach to manufacture hybrid stretchable circuits where commercial electronic components can be mounted on a stretchable circuit board. Similar to printed circuit board development, the components are electrically bonded on the elastic substrate and interconnected with stretchable electrical traces. The substrate—a silicone matrix carrying concentric rigid disks—ensures both the circuit elasticity and the mechanical integrity of the most fragile materials.

Robinson, A., E-mail: adam.1.robinson@nokia.com; Aziz, A., E-mail: a.aziz1@lancaster.ac.uk [Nanoscience Centre, University of Cambridge, Cambridge CB01FF (United Kingdom); Liu, Q.; Suo, Z. [School of Engineering and Applied Sciences and Kavli Institute for Bionano Science and Technology, Harvard University, Cambridge, Massachusetts 02138 (United States); Lacour, S. P., E-mail: stephanie.lacour@epfl.ch [Centre for Neuroprosthetics and Laboratory for Soft Bioelectronics Interfaces, School of Engineering, Ecole Polytechnique Fédérale de Lausanne, Lausanne 1015 (Switzerland)

2014-04-14T23:59:59.000Z

85

Multi-Faceted Scientific Strategies Toward Better Solid-State Lighting of Phosphorescent OLEDs  

SciTech Connect (OSTI)

This project has advanced solid-state lighting (SSL) by utilizing new phosphorescent systems for use in organic light-emitting diodes (OLEDs). The technical approach was two-fold: a) Targeted synthesis and screening of emitters designed to exhibit phosphorescence with maximized brightness in the solid state; and b) Construction and optimizing the performance of monochromatic and white OLEDs from the best new emitters to improve performance metrics versus the state of the art. The phosphorescent systems were screened candidates among a large variety of recentlysynthesized and newly-designed molecular and macromolecular metal-organic phosphors. The emitters and devices have been optimized to maximize light emission and color metrics, improve the long-term durability of emitters and devices, and reduce the manufacturing cost both by simplifying the process flow and by seeking less expensive device components than common ones. The project succeeded in all these goals upon comparison of the best materials and devices investigated vs. the state of the art of the technology.

Mohammad Omary; Bruce Gnade; Qi Wang; Oussama Elbjeirami; Chi Yang; Nigel Shepherd; Huiping Jia; Manuel Quevedo; Husam Alshareef; Minghang Li; Ming-Te Lin; Wei-Hsuan Chen; Iain Oswald; Pankaj Sinha; Ravi Arvapally; Usha Kaipa; John Determan; Sreekar Marpu; Roy McDougald; Gustavo Garza; Jason Halbert; Unnat Bhansali; Michael Perez

2010-08-31T23:59:59.000Z

86

23.2 / J. X. Sun 23.2: An Efficient Stacked OLED with Double-Sided Light Emission  

E-Print Network [OSTI]

23.2 / J. X. Sun 23.2: An Efficient Stacked OLED with Double-Sided Light Emission J. X. Sun, X. L;23.2 / J. X. Sun 2. Experimental Details The SOLED were fabricated on 75nm-ITO coated glass with a sheet

87

Observer Design for Gas Lifted Oil Wells Ole Morten Aamo, Gisle Otto Eikrem, Hardy Siahaan, and Bjarne Foss  

E-Print Network [OSTI]

Observer Design for Gas Lifted Oil Wells Ole Morten Aamo, Gisle Otto Eikrem, Hardy Siahaan flow systems is an area of increasing interest for the oil and gas industry. Oil wells with highly related to oil and gas wells exist, and in this study, unstable gas lifted wells will be the area

Foss, Bjarne A.

88

Fabrication of the ZnO thin films using wet-chemical etching processes on application for organic light emitting diode (OLED) devices  

E-Print Network [OSTI]

- sively used in solar cells, touch panels, heat mirrors, organic electro- luminescence devices (OLED- chemical etching behaviors of ZnO films were also investigated using various chemicals. In order

Hong, Byungyou

89

Signal Integrity Analysis of a 2-D and 3-D Integrated Potentiostat for Neurotransmitter Sensing  

E-Print Network [OSTI]

for the substrate, power network, and through silicon vias (TSVs). These models are combined integrated implantable systems. I. INTRODUCTION A multichannel potentiostat, integrated with micro and power dissipation. Signal integrity characteristics of a 2- D and 3-D integrated potentiostat

Stanacevic, Milutin

90

Fabrication and Characterization of New Hybrid Organic Light Emitting Diode (OLED): Europium-picrate-triethylene oxide Complex  

SciTech Connect (OSTI)

Thin-film light emitting devices based on organic materials have attracted vast interest in applications such as light emitting diode (LED) and flat-panel display. The organic material can be attached with inorganic material to enhance the performance of the light emitting device. A hybrid OLED based on a new complex of europium picrate (Eu-pic) with triethylene oxide (EO3) ligand is fabricated. The OLED is fabricated by using spin coating technique with acetone as the solvent and aluminum as the top electrode. The optical, photoluminescence (PL) and electrical properties of the sample are carried out by UV-Vis spectroscopy (Jasco V-750), luminescence spectroscopy (Perkin Elmer LS-500) and source measure unit (SMU)(Keithly), respectively.

Sarjidan, M. A. Mohd; Abu Zakaria, N. Z. A.; Abd. Majid, W. H. [Solid State Research Laboratory, Department of Physics, University of Malaya, 50603, Kuala Lumpur (Malaysia); Kusrini, Eny; Saleh, M. I. [School of Chemical Sciences, Universiti Sains Malaysia, 11800 Penang (Malaysia)

2009-07-07T23:59:59.000Z

91

Method of producing an electronic unit having a polydimethylsiloxane substrate and circuit lines  

SciTech Connect (OSTI)

A system of metalization in an integrated polymer microsystem. A flexible polymer substrate is provided and conductive ink is applied to the substrate. In one embodiment the flexible polymer substrate is silicone. In another embodiment the flexible polymer substrate comprises poly(dimethylsiloxane).

Davidson, James Courtney (Livermore, CA); Krulevitch, Peter A. (Pleasanton, CA); Maghribi, Mariam N. (Livermore, CA); Benett, William J. (Livermore, CA); Hamilton, Julie K. (Tracy, CA); Tovar, Armando R. (San Antonio, TX)

2012-06-19T23:59:59.000Z

92

Modifying the organic/electrode interface in Organic Solar Cells (OSCs) and improving the efficiency of solution-processed phosphorescent Organic Light-Emitting Diodes (OLEDs)  

SciTech Connect (OSTI)

Organic semiconductors devices, such as, organic solar cells (OSCs), organic light-emitting diodes (OLEDs) and organic field-effect transistors (OFETs) have drawn increasing interest in recent decades. As organic materials are flexible, light weight, and potentially low-cost, organic semiconductor devices are considered to be an alternative to their inorganic counterparts. This dissertation will focus mainly on OSCs and OLEDs. As a clean and renewable energy source, the development of OSCs is very promising. Cells with 9.2% power conversion efficiency (PCE) were reported this year, compared to < 8% two years ago. OSCs belong to the so-called third generation solar cells and are still under development. While OLEDs are a more mature and better studied field, with commercial products already launched in the market, there are still several key issues: (1) the cost of OSCs/OLEDs is still high, largely due to the costly manufacturing processes; (2) the efficiency of OSCs/OLEDs needs to be improved; (3) the lifetime of OSCs/OLEDs is not sufficient compared to their inorganic counterparts; (4) the physics models of the behavior of the devices are not satisfactory. All these limitations invoke the demand for new organic materials, improved device architectures, low-cost fabrication methods, and better understanding of device physics. For OSCs, we attempted to improve the PCE by modifying the interlayer between active layer/metal. We found that ethylene glycol (EG) treated poly(3,4-ethylenedioxythiophene): polystyrenesulfonate (PEDOT: PSS) improves hole collection at the metal/polymer interface, furthermore it also affects the growth of the poly(3- hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) blends, making the phase segregation more favorable for charge collection. We then studied organic/inorganic tandem cells. We also investigated the effect of a thin LiF layer on the hole-collection of copper phthalocyanine (CuPc)/C70-based small molecular OSCs. A thin LiF layer serves typically as the electron injection layer in OLEDs and electron collection interlayer in the OSCs. However, several reports showed that it can also assist in holeinjection in OLEDs. Here we first demonstrate that it assists hole-collection in OSCs, which is more obvious after air-plasma treatment, and explore this intriguing dual role. For OLEDs, we focus on solution processing methods to fabricate highly efficient phosphorescent OLEDs. First, we investigated OLEDs with a polymer host matrix, and enhanced charge injection by adding hole- and electron-transport materials into the system. We also applied a hole-blocking and electron-transport material to prevent luminescence quenching by the cathode. Finally, we substituted the polymer host by a small molecule, to achieve more efficient solution processed small molecular OLEDs (SMOLEDs); this approach is cost-effective in comparison to the more common vacuum thermal evaporation. All these studies help us to better understand the underlying relationship between the organic semiconductor materials and the OSCs and OLEDs’ performance and will subsequently assist in further enhancing the efficiencies of OSCs and OLEDs. With better efficiency and longer lifetime, the OSCs and OLEDs will be competitive with their inorganic counterparts.

Xiao, Teng

2012-04-27T23:59:59.000Z

93

Highly efficient blue OLEDs based on diphenylaminofluorenylstyrenes end-capped with heterocyclic aromatics  

SciTech Connect (OSTI)

In this paper, we have designed four diphenylaminofluorenylstyrene derivatives end-capped with heterocyclic aromatic groups, such as 9-phenylcabazole, 4-dibenzofuran, 2-benzoxazole, 2-quinoxaline, respectively. These materials showed blue to red fluorescence with maximum emission wavelengths of 476–611 nm, respectively, which were dependent on the structural and electronic nature of end-capping groups. To explore the electroluminescent properties of these materials, multilayer OLEDs were fabricated in the following sequence: ITO/DNTPD (40 nm)/NPB (20 nm)/2% doped in MADN (20 nm)/Alq{sub 3} (40 nm)/Liq. (1 nm)/Al. Among those, a device exhibited a highly efficient blue emission with the maximum luminance of 14,480 cd/m{sup 2} at 9 V, the luminous efficiency of 5.38 cd/A at 20 mA/cm{sup 2}, power efficiency of 2.77 lm/W at 20 mA/cm{sup 2}, and CIE{sub x,y} coordinates of (0.147, 0.152) at 8 V, respectively.

Oh, Suhyun [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)] [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Lee, Kum Hee; Kim, Young Kwan [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of)] [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2012-10-15T23:59:59.000Z

94

MATERIALS DEGRADATION ANALYSIS AND DEVELOPMENT TO ENABLE ULTRA LOW COST, WEB-PROCESSED WHITE P-OLED FOR SSL  

SciTech Connect (OSTI)

Progress over Phase II of DE-FG02-07ER86293 'Materials Degradation Analysis and Development to Enable Ultra Low Cost, Web-Processed White P-OLED for SSL' was initially rapid in terms of device performance improvements. We exceeded our device luminance lifetime goals for printed flexible white OLEDs as laid out in our project proposal. Our Phase II performance target was to demonstrate >1500 hours luminance lifetime at 100 Cd/m2 from a printed flexible device. We now have R&D devices well in excess of 8000 hrs lifetime at 100 Cd/m2, tested in air. We also were able to produce devices which met the voltage target of >1500 hours below 15V operation. After completing the initial performance milestones, we went on to focus on color-related degradation issues which were cited as important to commercialization of the technology by our manufacturing partners. We also put additional focus on cathode work as the active material development that occurred over the STTR time period required an adaptation of the cathode from the original cathode formulations which were developed based on previous generation active layer materials. We were able to improve compatibility of the cathode with some of the newer generation active layer materials and improve device yield and voltage behavior. An additional objective of the initial Phase II was to further develop the underlying manufacturing technology and real-life product specifications. This is a key requirement that must be met to ensure eventual commercialization of this DOE-funded technology. The link between commercial investment for full commercialization and R&D efforts in OLED solid State Lighting is often a large one. Add-Vision's lower cost, printed OLED manufacturing approach is an attraction, but close engagement with manufacturing partners and addressing customer specifications is a very important link. Manufacturing technology encompasses development of moisture reduction encapsulation technology, improved cost performance, and reductions in operating voltage through thinner and higher uniformity active device layers. We have now installed a pilot encapsulation system at AVI for controlled, high throughput lamination encapsulation of flexible OLEDs in a novel process. Along with this, we have developed, with our materials supply partners, adhesives, barrier films and other encapsulation materials and we are showing total air product lifetimes in the 2-4 years range from a process consistent with our throughput goals of {approx}1M device per month ({approx}30,000 sq. ft. of processed OLEDs). Within the last year of the project, we have been working to introduce the manufacturing improvements made in our LEP deposition and annealing process to our commercial partners. Based on the success of this, a pilot scale-up program was begun. During this process, Add-Vision was acquired by a strategic partner, in no small part, because of the promise of future success of the technology as evidenced by our commercial partners pilot scale-up plans. Overall, the performance, manufacturing and product work in this project has been successful. Additional analysis and device work at LBL has also shown a unique adhesion change with device bias stressing which may result from active layer polymer cross-linking during bias stressing of device. It was shown that even small bias stresses, as a fraction of a full device lifetime stress period, result in measurable chemical change in the device. Further work needs to be conducted to fully understand the chemical nature of this interaction. Elucidation of this effect would enable doped OLED formulation to be engineered to suppress this effect and further extend lifetimes and reduce voltage climb.

DR. DEVIN MACKENZIE

2011-12-13T23:59:59.000Z

95

Nanomechanics of hard films on compliant substrates.  

SciTech Connect (OSTI)

Development of flexible thin film systems for biomedical, homeland security and environmental sensing applications has increased dramatically in recent years [1,2,3,4]. These systems typically combine traditional semiconductor technology with new flexible substrates, allowing for both the high electron mobility of semiconductors and the flexibility of polymers. The devices have the ability to be easily integrated into components and show promise for advanced design concepts, ranging from innovative microelectronics to MEMS and NEMS devices. These devices often contain layers of thin polymer, ceramic and metallic films where differing properties can lead to large residual stresses [5]. As long as the films remain substrate-bonded, they may deform far beyond their freestanding counterpart. Once debonded, substrate constraint disappears leading to film failure where compressive stresses can lead to wrinkling, delamination, and buckling [6,7,8] while tensile stresses can lead to film fracture and decohesion [9,10,11]. In all cases, performance depends on film adhesion. Experimentally it is difficult to measure adhesion. It is often studied using tape [12], pull off [13,14,15], and peel tests [16,17]. More recent techniques for measuring adhesion include scratch testing [18,19,20,21], four point bending [22,23,24], indentation [25,26,27], spontaneous blisters [28,29] and stressed overlayers [7,26,30,31,32,33]. Nevertheless, sample design and test techniques must be tailored for each system. There is a large body of elastic thin film fracture and elastic contact mechanics solutions for elastic films on rigid substrates in the published literature [5,7,34,35,36]. More recent work has extended these solutions to films on compliant substrates and show that increasing compliance markedly changes fracture energies compared with rigid elastic solution results [37,38]. However, the introduction of inelastic substrate response significantly complicates the problem [10,39,40]. As a result, our understanding of the critical relationship between adhesion, properties, and fracture for hard films on compliant substrates is limited. To address this issue, we integrated nanomechanical testing and mechanics-based modeling in a program to define the critical relationship between deformation and fracture of nanoscale films on compliant substrates. The approach involved designing model film systems and employing nano-scale experimental characterization techniques to isolate effects of compliance, viscoelasticity, and plasticity on deformation and fracture of thin hard films on substrates that spanned more than two orders of compliance magnitude exhibit different interface structures, have different adhesion strengths, and function differently under stress. The results of this work are described in six chapters. Chapter 1 provides the motivation for this work. Chapter 2 presents experimental results covering film system design, sample preparation, indentation response, and fracture including discussion on the effects of substrate compliance on fracture energies and buckle formation from existing models. Chapter 3 describes the use of analytical and finite element simulations to define the role of substrate compliance and film geometry on the indentation response of thin hard films on compliant substrates. Chapter 4 describes the development and application of cohesive zone model based finite element simulations to determine how substrate compliance affects debond growth. Chapter 5 describes the use of molecular dynamics simulations to define the effects of substrate compliance on interfacial fracture of thin hard tungsten films on silicon substrates. Chapter 6 describes the Workshops sponsored through this program to advance understanding of material and system behavior.

Reedy, Earl David, Jr. (Sandia National Laboratories, Albuquerque, NM); Emerson, John Allen (Sandia National Laboratories, Albuquerque, NM); Bahr, David F. (Washington State University, Pullman, WA); Moody, Neville Reid; Zhou, Xiao Wang; Hales, Lucas (University of Minnesota, Minneapolis, MN); Adams, David Price (Sandia National Laboratories, Albuquerque, NM); Yeager,John (Washington State University, Pullman, WA); Nyugen, Thao D. (Johns Hopkins University, Baltimore, MD); Corona, Edmundo (Sandia National Laboratories, Albuquerque, NM); Kennedy, Marian S. (Clemson University, Clemson, SC); Cordill, Megan J. (Erich Schmid Institute, Leoben, Austria)

2009-09-01T23:59:59.000Z

96

Pure Aluminum as the Anode in Top Emission OLED Xiao-Ming Yu, Hua-Jun Peng, Xiu-Ling Zhu, Jia-Xin Sun,  

E-Print Network [OSTI]

Pure Aluminum as the Anode in Top Emission OLED Xiao-Ming Yu, Hua-Jun Peng, Xiu-Ling Zhu, Jia (TOLED) with pure aluminum metal layer as the bottom anode has been fabricated. The brightness as high as that of the TOLED with additional high work function silver deposited on aluminum as the anode

97

A Polysilicon Active Matrix Organic Light Emitting Diode Display with Integrated Drivers R.M.A. Dawson, Z. Shen, D.A. Furst, S. Connor, J. Hsu, M.G. Kane, R.G. Stewart, A. Ipri  

E-Print Network [OSTI]

A Polysilicon Active Matrix Organic Light Emitting Diode Display with Integrated Drivers R.S.A. Abstract The design of an active matrix organic light emitting diode (AMOLED) display using a polysilicon. Introduction Organic light emitting diodes (OLEDs) are presently of great interest due to their potential

98

Direct-Cooled Power Electronics Substrate  

SciTech Connect (OSTI)

The goal of the Direct-Cooled Power Electronics Substrate project is to reduce the size and weight of the heat sink for power electronics used in hybrid electric vehicles (HEVs) and plug-in hybrid electric vehicles (PHEVs). The concept proposed in this project was to develop an innovative power electronics mounting structure, model it, and perform both thermal and mechanical finite-element analysis (FEA). This concept involved integrating cooling channels within the direct-bonded copper (DBC) substrate and strategically locating these channels underneath the power electronic devices. This arrangement would then be directly cooled by water-ethylene glycol (WEG), essentially eliminating the conventional heat sink and associated heat flow path. The concept was evaluated to determine its manufacturability, its compatibility with WEG, and the potential to reduce size and weight while directly cooling the DBC and associated electronics with a coolant temperature of 105 C. This concept does not provide direct cooling to the electronics, only direct cooling inside the DBC substrate itself. These designs will take into account issues such as containment of the fluid (separation from the electronics) and synergy with the whole power inverter design architecture. In FY 2008, mechanical modeling of substrate and inverter core designs as well as thermal and mechanical stress FEA modeling of the substrate designs was performed, along with research into manufacturing capabilities and methods that will support the substrate designs. In FY 2009, a preferred design(s) will be fabricated and laboratory validation testing will be completed. In FY 2010, based on the previous years laboratory testing, the mechanical design will be modified and the next generation will be built and tested in an operating inverter prototype.

Wiles, R.; Ayers, C.; Wereszczak, A.

2008-12-23T23:59:59.000Z

99

NETL F 451.1/1-1, Categorical Exclusion Designation Form  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

commercialization of a large area and low-cost "integrated substrate" for rigid OLED SSL lighting. James C. Robinson II Digitally signed by James C. Robinson II DN: cnJames C....

100

Conductive inks for metalization in integrated polymer microsystems  

DOE Patents [OSTI]

A system of metalization in an integrated polymer microsystem. A flexible polymer substrate is provided and conductive ink is applied to the substrate. In one embodiment the flexible polymer substrate is silicone. In another embodiment the flexible polymer substrate comprises poly(dimethylsiloxane).

Davidson, James Courtney (Livermore, CA); Krulevitch, Peter A. (Pleasanton, CA); Maghribi, Mariam N. (Livermore, CA); Benett, William J. (Livermore, CA); Hamilton, Julie K. (Tracy, CA); Tovar, Armando R. (San Antonio, TX)

2006-02-28T23:59:59.000Z

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Sealed substrate carrier for electroplating  

DOE Patents [OSTI]

One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier includes a non-conductive carrier body on which the substrates are held, and conductive lines are embedded within the carrier body. A conductive bus bar is embedded into a top side of the carrier body and is conductively coupled to the conductive lines. A thermoplastic overmold covers a portion of the bus bar, and there is a plastic-to-plastic bond between the thermoplastic overmold and the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

Ganti, Kalyana Bhargava (Fremont, CA)

2012-07-17T23:59:59.000Z

102

Pedestal substrate for coated optics  

DOE Patents [OSTI]

A pedestal optical substrate that simultaneously provides high substrate dynamic stiffness, provides low surface figure sensitivity to mechanical mounting hardware inputs, and constrains surface figure changes caused by optical coatings to be primarily spherical in nature. The pedestal optical substrate includes a disk-like optic or substrate section having a top surface that is coated, a disk-like base section that provides location at which the substrate can be mounted, and a connecting cylindrical section between the base and optics or substrate sections. The connecting cylindrical section may be attached via three spaced legs or members. However, the pedestal optical substrate can be manufactured from a solid piece of material to form a monolith, thus avoiding joints between the sections, or the disk-like base can be formed separately and connected to the connecting section. By way of example, the pedestal optical substrate may be utilized in the fabrication of optics for an extreme ultraviolet (EUV) lithography imaging system, or in any optical system requiring coated optics and substrates with reduced sensitivity to mechanical mounts.

Hale, Layton C. (Livermore, CA); Malsbury, Terry N. (Tracy, CA); Patterson, Steven R. (Concord, NC)

2001-01-01T23:59:59.000Z

103

Carbon nanotubes on a substrate  

DOE Patents [OSTI]

The present invention includes carbon nanotubes whose hollow cores are 100% filled with conductive filler. The carbon nanotubes are in uniform arrays on a conductive substrate and are well-aligned and can be densely packed. The uniformity of the carbon nanotube arrays is indicated by the uniform length and diameter of the carbon nanotubes, both which vary from nanotube to nanotube on a given array by no more than about 5%. The alignment of the carbon nanotubes is indicated by the perpendicular growth of the nanotubes from the substrates which is achieved in part by the simultaneous growth of the conductive filler within the hollow core of the nanotube and the densely packed growth of the nanotubes. The present invention provides a densely packed carbon nanotube growth where each nanotube is in contact with at least one nearest-neighbor nanotube. The substrate is a conductive substrate coated with a growth catalyst, and the conductive filler can be single crystals of carbide formed by a solid state reaction between the substrate material and the growth catalyst. The present invention further provides a method for making the filled carbon nanotubes on the conductive substrates. The method includes the steps of depositing a growth catalyst onto the conductive substrate as a prepared substrate, creating a vacuum within a vessel which contains the prepared substrate, flowing H2/inert (e.g. Ar) gas within the vessel to increase and maintain the pressure within the vessel, increasing the temperature of the prepared substrate, and changing the H2/Ar gas to ethylene gas such that the ethylene gas flows within the vessel. Additionally, varying the density and separation of the catalyst particles on the conductive substrate can be used to control the diameter of the nanotubes.

Gao, Yufei [Kennewick, WA; Liu, Jun [West Richland, WA

2002-03-26T23:59:59.000Z

104

Composite substrate for bipolar electrodes  

DOE Patents [OSTI]

Substrates for electrode systems, particularly those to be used for bipolar electrodes in zinc-bromine batteries, are disclosed. The substrates preferably include carbon-black as a conductive filler in a polymeric matrix, with reinforcing materials such as glass fibers. Warpage of the zinc-bromine electrodes which was experienced in the prior art and which was believed to be caused by physical expansion of the electrodes due to bromine absorption by the carbon-black, is substantially eliminated when new substrate fabrication techniques are employed. In the pesent invention, substrates are prepared using a lamination process known as glass mat reinforced thermoplastics technology or, in an alternate embodiment, the substrate is made using a slurry process.

Tekkanat, Bora (Milwaukee, WI); Bolstad, James J. (Shorewood, WI)

1992-12-22T23:59:59.000Z

105

Composite substrate for bipolar electrodes  

DOE Patents [OSTI]

Substrates for electrode systems, particularly those to be used for bipolar electrodes in zinc-bromine batteries, are disclosed. The substrates preferably include carbon-black as a conductive filler in a polymeric matrix, with reinforcing materials such as glass fibers. Warpage of the zinc-bromine electrodes which was experienced in the prior art and which was believed to be caused by physical expansion of the electrodes due to bromine absorption by the carbon-black, is substantially eliminated when new substrate fabrication techniques are employed. In the present invention, substrates are prepared using a lamination process known as glass mat reinforced thermoplastics technology or, in an alternate embodiment, the substrate is made using a slurry process. 4 figs.

Tekkanat, B.; Bolstad, J.J.

1992-12-22T23:59:59.000Z

106

Method of processing a substrate  

DOE Patents [OSTI]

The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom. The invention is also embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and one of the grounded electrodes contains a means of mixing in other chemical precursors to combine with the plasma stream, and a substrate or work piece placed in the gas flow downstream of the electrodes, such that said substrate or work piece is contacted by the reactive gases emanating therefrom. In one embodiment, the plasma flow device removes organic materials from a substrate or work piece, and is a stripping or cleaning device. In another embodiment, the plasma flow device kills biological microorganisms on a substrate or work piece, and is a sterilization device. In another embodiment, the plasma flow device activates the surface of a substrate or work piece, and is a surface activation device. In another embodiment, the plasma flow device etches materials from a substrate or work piece, and is a plasma etcher. In another embodiment, the plasma flow device deposits thin films onto a substrate or work piece, and is a plasma-enhanced chemical vapor deposition device or reactor.

Babayan, Steven E. (Huntington Beach, CA); Hicks, Robert F. (Los Angeles, CA)

2008-02-12T23:59:59.000Z

107

Direct cooled power electronics substrate  

DOE Patents [OSTI]

The disclosure describes directly cooling a three-dimensional, direct metallization (DM) layer in a power electronics device. To enable sufficient cooling, coolant flow channels are formed within the ceramic substrate. The direct metallization layer (typically copper) may be bonded to the ceramic substrate, and semiconductor chips (such as IGBT and diodes) may be soldered or sintered onto the direct metallization layer to form a power electronics module. Multiple modules may be attached to cooling headers that provide in-flow and out-flow of coolant through the channels in the ceramic substrate. The modules and cooling header assembly are preferably sized to fit inside the core of a toroidal shaped capacitor.

Wiles, Randy H [Powell, TN; Wereszczak, Andrew A [Oak Ridge, TN; Ayers, Curtis W. (Kingston, TN) [Kingston, TN; Lowe, Kirk T. (Knoxville, TN) [Knoxville, TN

2010-09-14T23:59:59.000Z

108

Technological assessment of silicon on lattice engineered substrate (SOLES) for optical applications  

E-Print Network [OSTI]

Over the past decade, much effort had been placed to integrate optoelectronic and electronic devices. Silicon on lattice engineered substrate (SOLES) had been developed for such purpose. As SOLES technology mature, a ...

Leung, Man Yin

2008-01-01T23:59:59.000Z

109

High mobility strained Si/SiGe heterostructure MOSFETs : channel engineering and virtual substrate optimization  

E-Print Network [OSTI]

High quality relaxed silicon-germanium graded buffers are an important platform for monolithic integration of high speed heterostructure field-effect transistors and III-V-based optoelectronics onto silicon substrates. In ...

Leitz, Christopher W. (Christopher William), 1976-

2002-01-01T23:59:59.000Z

110

Commercialization of silicon on lattice-engineered substrate for electronic applications  

E-Print Network [OSTI]

The commercial potential of SOLES (Silicon on Lattice-Engineered Substrate) is investigated considering the competing technologies, competing market players and market demands. Monolithic integration of Si devices with ...

Liang, Yu Yan

2008-01-01T23:59:59.000Z

111

An elastic-spring-substrated nanogenerator as an active sensor for self-powered balance  

E-Print Network [OSTI]

demonstrated in various elds, such as heart- beating pulse diagnosis,13 tyre pressure/speed measurement,14 wind-substrated nanogenerator (SNG) was fabricated to accomplish the monolithic integration of an active sensor device onto

Wang, Zhong L.

112

Substrate Recognition Strategy for Botulinum Neurotoxin  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

changes near the toxin's catalytic pocket upon substrate binding, probably serving to render the protease competent for catalysis. Exosite-based model of BoNTA substrate...

113

Method for forming metallic silicide films on silicon substrates by ion beam deposition  

SciTech Connect (OSTI)

This patent describes metallic silicide films formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

Zuhr, R.A.; Holland, O.W.

1990-03-13T23:59:59.000Z

114

Method for forming metallic silicide films on silicon substrates by ion beam deposition  

DOE Patents [OSTI]

Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

Zuhr, Raymond A. (Oak Ridge, TN); Holland, Orin W. (Oak Ridge, TN)

1990-01-01T23:59:59.000Z

115

Method for forming metallic silicide films on silicon substrates by ion beam deposition  

SciTech Connect (OSTI)

Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

Zuhr, R.A.; Holland, O.W.

1989-01-24T23:59:59.000Z

116

Coatings on reflective mask substrates  

DOE Patents [OSTI]

A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

Tong, William Man-Wai (Oakland, CA); Taylor, John S. (Livermore, CA); Hector, Scott D. (Oakland, CA); Mangat, Pawitter J. S. (Gilbert, AZ); Stivers, Alan R. (San Jose, CA); Kofron, Patrick G. (San Jose, CA); Thompson, Matthew A. (Austin, TX)

2002-01-01T23:59:59.000Z

117

Porous substrates filled with nanomaterials  

DOE Patents [OSTI]

A composition comprising: at least one porous carbon monolith, such as a carbon aerogel, comprising internal pores, and at least one nanomaterial, such as carbon nanotubes, disposed uniformly throughout the internal pores. The nanomaterial can be disposed in the middle of the monolith. In addition, a method for making a monolithic solid with both high surface area and good bulk electrical conductivity is provided. A porous substrate having a thickness of 100 microns or more and comprising macropores throughout its thickness is prepared. At least one catalyst is deposited inside the porous substrate. Subsequently, chemical vapor deposition is used to uniformly deposit a nanomaterial in the macropores throughout the thickness of the porous substrate. Applications include electrical energy storage, such as batteries and capacitors, and hydrogen storage.

Worsley, Marcus A.; Baumann, Theodore F.; Satcher, Jr., Joe H.; Stadermann, Michael

2014-08-19T23:59:59.000Z

118

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A substrate for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3.times.10.sup.-3 ohm-cm.

Ciszek, Theodore F. (Evergreen, CO)

1998-01-01T23:59:59.000Z

119

Graphene folding on flat substrates  

SciTech Connect (OSTI)

We present a combined experimental-theoretical study of graphene folding on flat substrates. The structure and deformation of the folded graphene sheet are experimentally characterized by atomic force microscopy. The local graphene folding behaviors are interpreted based on nonlinear continuum mechanics modeling and molecular dynamics simulations. Our study on self-folding of a trilayer graphene sheet reports a bending stiffness of about 6.57?eV, which is about four times the reported values for monolayer graphene. Our results reveal that an intriguing free sliding phenomenon occurs at the interlayer van der Waals interfaces during the graphene folding process. This work demonstrates that it is a plausible venue to quantify the bending stiffness of graphene based on its self-folding conformation on flat substrates. The findings reported in this work are useful to a better understanding of the mechanical properties of graphene and in the pursuit of its applications.

Chen, Xiaoming; Zhao, Yadong; Ke, Changhong, E-mail: cke@binghamton.edu [Department of Mechanical Engineering, State University of New York at Binghamton, Binghamton, New York 13902 (United States); Zhang, Liuyang; Wang, Xianqiao [College of Engineering, University of Georgia, Athens, Georgia 30602 (United States)

2014-10-28T23:59:59.000Z

120

Preparation of CaO as OLED getter material through control of crystal growth of CaCO{sub 3} by block copolymers in aqueous solution  

SciTech Connect (OSTI)

As the starting materials of organic light-emitting diode (OLED) getter, calcium carbonate (CaCO{sub 3}) particles with various shapes and crystal structures have been successfully prepared with additives (L64 or PEGPG), which contain blocks of poly(ethylene oxide) (PEO) and poly(propylene oxide) (PPO). These CaCO{sub 3} particles were calcinated into highly crystalline calcium oxide (CaO) nanoparticles with high capacity of water adsorption up to 14.23 wt.%. The CaCO{sub 3} and CaO particles prepared at various conditions were characterized using the field emission scanning electron microscopy (FE-SEM), Fourier transform infrared microscopy (FT-IR), X-ray powder diffraction (XRD), and dynamic vapor sorption (DVS) method.

Park, Jae-Hyung [Department of Chemical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Oh, Seong-Geun [Department of Chemical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)], E-mail: seongoh@hanyang.ac.kr

2009-01-08T23:59:59.000Z

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Preparing reflective substrate surfaces for laser treatment  

DOE Patents [OSTI]

A coating of either copper oxide or felt tip pen ink is used on reflective copper or gold substrates to enhance laser beam coupling when the substrates are cut or welded with a laser.

Flick, F.F.

1984-11-21T23:59:59.000Z

122

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A substrate is described for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3{times}10{sup {minus}3} ohm-cm. 4 figs.

Ciszek, T.F.

1998-07-28T23:59:59.000Z

123

Automated cassette-to-cassette substrate handling system  

DOE Patents [OSTI]

An automated cassette-to-cassette substrate handling system includes a cassette storage module for storing a plurality of substrates in cassettes before and after processing. A substrate carrier storage module stores a plurality of substrate carriers. A substrate carrier loading/unloading module loads substrates from the cassette storage module onto the plurality of substrate carriers and unloads substrates from the plurality of substrate carriers to the cassette storage module. A transport mechanism transports the plurality of substrates between the cassette storage module and the plurality of substrate carriers and transports the plurality of substrate carriers between the substrate carrier loading/unloading module and a processing chamber. A vision system recognizes recesses in the plurality of substrate carriers corresponding to empty substrate positions in the substrate carrier. A processor receives data from the vision system and instructs the transport mechanism to transport substrates to positions on the substrate carrier in response to the received data.

Kraus, Joseph Arthur; Boyer, Jeremy James; Mack, Joseph; DeChellis, Michael; Koo, Michael

2014-03-18T23:59:59.000Z

124

Textured substrate tape and devices thereof  

DOE Patents [OSTI]

A method for forming a sharply biaxially textured substrate, such as a single crystal substrate, includes the steps of providing a deformed metal substrate, followed by heating above the secondary recrystallization temperature of the deformed substrate, and controlling the secondary recrystallization texture by either using thermal gradients and/or seeding. The seed is selected to shave a stable texture below a predetermined temperature. The sharply biaxially textured substrate can be formed as a tape having a length of 1 km, or more. Epitaxial articles can be formed from the tapes to include an epitaxial electromagnetically active layer. The electromagnetically active layer can be a superconducting layer.

Goyal, Amit

2006-08-08T23:59:59.000Z

125

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

Ciszek, T.F.

1995-03-28T23:59:59.000Z

126

Plasmons in graphene on uniaxial substrates  

SciTech Connect (OSTI)

Placing graphene on uniaxial substrates may have interesting application potential for graphene-based photonic and optoelectronic devices. Here, we analytically derive the dispersion relation for graphene plasmons on uniaxial substrates and discuss their momentum, propagation length, and polarization as a function of frequency, propagation direction, and both ordinary and extraordinary dielectric permittivities of the substrate. We find that the plasmons exhibit an anisotropic propagation, yielding radially asymmetric field patterns when a point emitter launches plasmons in the graphene layer.

Arrazola, I. [Universidad del País Vasco, 48940 Leioa (Spain) [Universidad del País Vasco, 48940 Leioa (Spain); CIC nanoGUNE Consolider, 20018 Donostia-San Sebastián (Spain); Hillenbrand, R.; Nikitin, A. Yu., E-mail: alexeynik@rambler.ru [CIC nanoGUNE Consolider, 20018 Donostia-San Sebastián (Spain); Ikerbasque, Basque Foundation for Science, 48011 Bilbao (Spain)

2014-01-06T23:59:59.000Z

127

Substrate for thin silicon solar cells  

DOE Patents [OSTI]

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

Ciszek, Theodore F. (Evergreen, CO)

1995-01-01T23:59:59.000Z

128

Superconducting Cuprates on Catalytic Substrates - Energy Innovation...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Transmission Electricity Transmission Find More Like This Return to Search Superconducting Cuprates on Catalytic Substrates Brookhaven National Laboratory Contact BNL About...

129

Integration of planar transformer and/or planar inductor with power switches in power converter  

DOE Patents [OSTI]

A power converter integrates at least one planar transformer comprising a multi-layer transformer substrate and/or at least one planar inductor comprising a multi-layer inductor substrate with a number of power semiconductor switches physically and thermally coupled to a heat sink via one or more multi-layer switch substrates.

Chen, Kanghua (Canton, MI); Ahmed, Sayeed (Canton, MI); Zhu, Lizhi (Canton, MI)

2007-10-30T23:59:59.000Z

130

Methods for integrating a functional component into a microfluidic device  

DOE Patents [OSTI]

Injection molding is used to form microfluidic devices with integrated functional components. One or more functional components are placed in a mold cavity, which is then closed. Molten thermoplastic resin is injected into the mold and then cooled, thereby forming a solid substrate including the functional component(s). The solid substrate including the functional component(s) is then bonded to a second substrate, which may include microchannels or other features.

Simmons, Blake; Domeier, Linda; Woo, Noble; Shepodd, Timothy; Renzi, Ronald F.

2014-08-19T23:59:59.000Z

131

Passive hybrid sensing tag with flexible substrate saw device  

DOE Patents [OSTI]

The integration of surface acoustic wave (SAW) filters, microfabricated transmission lines, and sensors onto polymer substrates in order to enable a passive wireless sensor platform is described herein. Incident microwave pulses on an integrated antenna are converted to an acoustic wave via a SAW filter and transmitted to an impedance based sensor, which for this work is a photodiode. Changes in the sensor state induce a corresponding change in the impedance of the sensor resulting in a reflectance profile. Data collected at a calibrated receiver is used to infer the state of the sensor. Based on this principal, light levels were passively and wirelessly demonstrated to be sensed at distances of up to about 12 feet.

Skinner, Jack L.; Chu, Eric Y.; Ho, Harvey

2012-12-25T23:59:59.000Z

132

Interfacial Shear Strength of Oxide Scale and SS 441 Substrate  

SciTech Connect (OSTI)

Recent developments on decreasing the operating temperature for Solid Oxide Fuel Cells (SOFCs) have enabled the use of high temperature ferritic alloys as interconnect materials. Oxide scale will inevitably grow on the ferritic interconnects in a high temperature oxidation environment of SOFCs. The growth of the oxide scale induces growth stresses in the scale layer and on the scale/substrate interface. These growth stresses combined with the thermal stresses induced upon stacking cooling by the thermal expansion coefficient mismatch between the oxide scale and the substrate may lead to scale delamination/buckling and eventual spallation, which may lead to serious cell performance degradation. Hence the interfacial adhesion strength between the oxide scale and the substrate is crucial to the reliability and durability of the metallic interconnect in SOFC operating environments. In this paper, we applied an integrated experimental/modeling methodology to quantify the interfacial adhesion strength between the oxide scale and the SS 441 metallic interconnect. The predicted interfacial strength is discussed in details.

Liu, Wenning N.; Sun, Xin; Stephens, Elizabeth V.; Khaleel, Mohammad A.

2011-05-01T23:59:59.000Z

133

Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates  

SciTech Connect (OSTI)

We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2?MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

Seo, Won-Oh; Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul 136-713 (Korea, Republic of); Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol [Radiation Integrated System Research Division, Korea Atomic Energy Research Institute (KAERI), Daejeon 305-353 (Korea, Republic of); Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2014-08-25T23:59:59.000Z

134

Grid Integration  

SciTech Connect (OSTI)

Summarizes the goals and activities of the DOE Solar Energy Technologies Program efforts within its grid integration subprogram.

Not Available

2008-09-01T23:59:59.000Z

135

Heterogeneous lithium niobate photonics on silicon substrates  

E-Print Network [OSTI]

Heterogeneous lithium niobate photonics on silicon substrates Payam Rabiei,1,* Jichi Ma,1 Saeed-confined lithium niobate photonic devices and circuits on silicon substrates is reported based on wafer bonding high- performance lithium niobate microring optical resonators and Mach- Zehnder optical modulators

Fathpour, Sasan

136

HIGH QUALITY GERMANIUM PHOTODIODES ON SILICON SUBSTRATES USING AN INTERMEDIATE CHEMICAL MECHANICAL POLISHING STEP  

E-Print Network [OSTI]

HIGH QUALITY GERMANIUM PHOTODIODES ON SILICON SUBSTRATES USING AN INTERMEDIATE CHEMICAL MECHANICAL, MA 02139. ABSTRACT Germanium (Ge) photodiodes are capable of high quantum yields and can operate quality Ge/Si can be used to integrate GaAs/Ge solar cells, light emitting devices, and Ge photodiodes

137

Surface-engineered substrates for improved human pluripotent stem cell culture under  

E-Print Network [OSTI]

modification of typical cell culture plastics to define a favorable surface environment for human pluripotentSurface-engineered substrates for improved human pluripotent stem cell culture under fully defined of Chemical Engineering, d David H. Koch Institute for Integrative Cancer Research, and e Harvard

Saha, Krishanu

138

Substrate solder barriers for semiconductor epilayer growth  

DOE Patents [OSTI]

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

Drummond, Timothy J. (Tijeras, NM); Ginley, David S. (Albuquerque, NM); Zipperian, Thomas E. (Albuquerque, NM)

1989-01-01T23:59:59.000Z

139

Thin Film Transistors On Plastic Substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

2004-01-20T23:59:59.000Z

140

Substrate solder barriers for semiconductor epilayer growth  

DOE Patents [OSTI]

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

1989-05-09T23:59:59.000Z

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Method of forming fluorine-bearing diamond layer on substrates, including tool substrates  

DOE Patents [OSTI]

A method of forming a fluorine-bearing diamond layer on non-diamond substrates, especially on tool substrates comprising a metal matrix and hard particles, such as tungsten carbide particles, in the metal matrix. The substrate and a fluorine-bearing plasma or other gas are then contacted under temperature and pressure conditions effective to nucleate fluorine-bearing diamond on the substrate. A tool insert substrate is treated prior to the diamond nucleation and growth operation by etching both the metal matrix and the hard particles using suitable etchants.

Chang, R. P. H. (Glenview, IL); Grannen, Kevin J. (Evanston, IL)

2002-01-01T23:59:59.000Z

142

Electron mobility calculation for graphene on substrates  

SciTech Connect (OSTI)

By a semiclassical Monte Carlo method, the electron mobility in graphene is calculated for three different substrates: SiO{sub 2}, HfO{sub 2}, and hexagonal boron nitride (h-BN). The calculations account for polar and non-polar surface optical phonon (OP) scatterings induced by the substrates and charged impurity (CI) scattering, in addition to intrinsic phonon scattering in pristine graphene. It is found that HfO{sub 2} is unsuitable as a substrate, because the surface OP scattering of the substrate significantly degrades the electron mobility. The mobility on the SiO{sub 2} and h-BN substrates decreases due to CI scattering. However, the mobility on the h-BN substrate exhibits a high electron mobility of 170?000?cm{sup 2}/(V·s) for electron densities less than 10{sup 12?}cm{sup ?2}. Therefore, h-BN should be an appealing substrate for graphene devices, as confirmed experimentally.

Hirai, Hideki; Ogawa, Matsuto [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1, Rokko-dai, Nada-ku, Kobe 657-8501 (Japan); Tsuchiya, Hideaki, E-mail: tsuchiya@eedept.kobe-u.ac.jp [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1, Rokko-dai, Nada-ku, Kobe 657-8501 (Japan); Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0075 (Japan); Kamakura, Yoshinari; Mori, Nobuya [Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0075 (Japan); Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan)

2014-08-28T23:59:59.000Z

143

Wafer bonded virtual substrate and method for forming the same  

DOE Patents [OSTI]

A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.

Atwater, Jr., Harry A. (So. Pasadena, CA); Zahler, James M. (Pasadena, CA); Morral, Anna Fontcuberta i (Paris, FR)

2007-07-03T23:59:59.000Z

144

Method for deposition of a conductor in integrated circuits  

DOE Patents [OSTI]

A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten. 2 figs.

Creighton, J.R.; Dominguez, F.; Johnson, A.W.; Omstead, T.R.

1997-09-02T23:59:59.000Z

145

Method for deposition of a conductor in integrated circuits  

DOE Patents [OSTI]

A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.

Creighton, J. Randall (Albuquerque, NM); Dominguez, Frank (Albuquerque, NM); Johnson, A. Wayne (Albuquerque, NM); Omstead, Thomas R. (Albuquerque, NM)

1997-01-01T23:59:59.000Z

146

Substrate Recognition Strategy for Botulinum Neurotoxin  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon CoolingSubstrate CdTeSubstrateSubstrate

147

Implantable biomedical devices on bioresorbable substrates  

DOE Patents [OSTI]

Provided herein are implantable biomedical devices, methods of administering implantable biomedical devices, methods of making implantable biomedical devices, and methods of using implantable biomedical devices to actuate a target tissue or sense a parameter associated with the target tissue in a biological environment. Each implantable biomedical device comprises a bioresorbable substrate, an electronic device having a plurality of inorganic semiconductor components supported by the bioresorbable substrate, and a barrier layer encapsulating at least a portion of the inorganic semiconductor components. Upon contact with a biological environment the bioresorbable substrate is at least partially resorbed, thereby establishing conformal contact between the implantable biomedical device and the target tissue in the biological environment.

Rogers, John A; Kim, Dae-Hyeong; Omenetto, Fiorenzo; Kaplan, David L; Litt, Brian; Viventi, Jonathan; Huang, Yonggang; Amsden, Jason

2014-03-04T23:59:59.000Z

148

Insolation integrator  

DOE Patents [OSTI]

An electric signal representative of the rate of insolation is integrated to determine if it is adequate for operation of a solar energy collection system.

Dougherty, John J. (Norristown, PA); Rudge, George T. (Lansdale, PA)

1980-01-01T23:59:59.000Z

149

Labeling and Identification of Direct Kinase Substrates  

E-Print Network [OSTI]

Identifying kinase substrates is an important step in mapping signal transduction pathways, but it remains a difficult and time-consuming process. Analog-sensitive (AS) kinases have been used to selectively tag and identify ...

Carlson, Scott M.

150

Off-axis silicon carbide substrates  

DOE Patents [OSTI]

A method of epitaxial growth of a material on a crystalline substrate includes selecting a substrate having a crystal plane that includes a plurality of terraces with step risers that join adjacent terraces. Each terrace of the plurality or terraces presents a lattice constant that substantially matches a lattice constant of the material, and each step riser presents a step height and offset that is consistent with portions of the material nucleating on adjacent terraces being in substantial crystalline match at the step riser. The method also includes preparing a substrate by exposing the crystal plane; and epitaxially growing the material on the substrate such that the portions of the material nucleating on adjacent terraces merge into a single crystal lattice without defects at the step risers.

Edgar, James; Dudley, Michael; Kuball, Martin; Zhang, Yi; Wang, Guan; Chen, Hui; Zhang, Yu

2014-09-02T23:59:59.000Z

151

Direct transfer of graphene onto flexible substrates  

E-Print Network [OSTI]

In this paper we explore the direct transfer via lamination of chemical vapor deposition graphene onto different flexible substrates. The transfer method investigated here is fast, simple, and does not require an intermediate ...

Araujo, P. T.

152

Substrate solder barriers for semiconductor epilayer growth  

DOE Patents [OSTI]

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.

Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

1987-10-23T23:59:59.000Z

153

Vacuum die attach for integrated circuits  

DOE Patents [OSTI]

A thin film eutectic bond for attaching an integrated circuit die to a circuit substrate is formed by coating at least one bonding surface on the die and substrate with an alloying metal, assembling the die and substrate under compression loading, and heating the assembly to an alloying temperature in a vacuum. A very thin bond, 10 microns or less, which is substantially void free, is produced. These bonds have high reliability, good heat and electrical conduction, and high temperature tolerance. The bonds are formed in a vacuum chamber, using a positioning and loading fixture to compression load the die, and an IR lamp or other heat source. For bonding a silicon die to a silicon substrate, a gold silicon alloy bond is used. Multiple dies can be bonded simultaneously. No scrubbing is required.

Schmitt, Edward H. (Livermore, CA); Tuckerman, David B. (Livermore, CA)

1991-01-01T23:59:59.000Z

154

Vacuum die attach for integrated circuits  

DOE Patents [OSTI]

A thin film eutectic bond for attaching an integrated circuit die to a circuit substrate is formed by coating at least one bonding surface on the die and substrate with an alloying metal, assembling the die and substrate under compression loading, and heating the assembly to an alloying temperature in a vacuum. A very thin bond, 10 microns or less, which is substantially void free, is produced. These bonds have high reliability, good heat and electrical conduction, and high temperature tolerance. The bonds are formed in a vacuum chamber, using a positioning and loading fixture to compression load the die, and an IR lamp or other heat source. For bonding a silicon die to a silicon substrate, a gold silicon alloy bond is used. Multiple dies can be bonded simultaneously. No scrubbing is required. 1 figure.

Schmitt, E.H.; Tuckerman, D.B.

1991-09-10T23:59:59.000Z

155

Composition containing aerogel substrate loaded with tritium  

DOE Patents [OSTI]

The invention provides a process for loading an aerogel substrate with tritium and the resultant compositions. According to the process, an aerogel substrate is hydrolyzed so that surface OH groups are formed. The hydrolyzed aerogel is then subjected to tritium exchange employing, for example, a tritium-containing gas, whereby tritium atoms replace H atoms of surface OH groups. OH and/or CH groups of residual alcohol present in the aerogel may also undergo tritium exchange.

Ashley, Carol S. (Albuquerque, NM); Brinker, C. Jeffrey (Albuquerque, NM); Ellefson, Robert E. (Centerville, OH); Gill, John T. (Miamisburg, OH); Reed, Scott (Albuquerque, NM); Walko, Robert J. (Albuquerque, NM)

1992-01-01T23:59:59.000Z

156

Integrated field emission array for ion desorption  

DOE Patents [OSTI]

An integrated field emission array for ion desorption includes an electrically conductive substrate; a dielectric layer lying over the electrically conductive substrate comprising a plurality of laterally separated cavities extending through the dielectric layer; a like plurality of conically-shaped emitter tips on posts, each emitter tip/post disposed concentrically within a laterally separated cavity and electrically contacting the substrate; and a gate electrode structure lying over the dielectric layer, including a like plurality of circular gate apertures, each gate aperture disposed concentrically above an emitter tip/post to provide a like plurality of annular gate electrodes and wherein the lower edge of each annular gate electrode proximate the like emitter tip/post is rounded. Also disclosed herein are methods for fabricating an integrated field emission array.

Resnick, Paul J; Hertz, Kristin L; Holland, Christopher; Chichester, David; Schwoebel, Paul

2013-09-17T23:59:59.000Z

157

Project/Research Opportunities Integrated Optoelectronics Group  

E-Print Network [OSTI]

Project/Research Opportunities Integrated Optoelectronics Group Department of Electrical-effective functional photonic/optoelectronic devices/circuits are at high demands now-a-days for applications-on-insulator (SOI) substrate has been established to be an attractive platform for a photonic/optoelectronic

Das, Bijoy Krishna

158

Design Potential of Metal Foil Substrates for Optimized DOC Performanc...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Design Potential of Metal Foil Substrates for Optimized DOC Performance Design Potential of Metal Foil Substrates for Optimized DOC Performance Poster presentation at the 2007...

159

Characterization of the plastic substrates, the reflective layers...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

the plastic substrates, the reflective layers, the adhesives, and the grooves of today's archival-grade Characterization of the plastic substrates, the reflective layers, the...

160

Substrate Changes Associated with the Chemistry of Self-Assembled...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Substrate Changes Associated with the Chemistry of Self-Assembled Monolayers on Silicon. Substrate Changes Associated with the Chemistry of Self-Assembled Monolayers on Silicon....

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Determination of Interfacial Adhesion Strength between Oxide Scale and Substrate for Metallic SOFC Interconnects  

SciTech Connect (OSTI)

The interfacial adhesion strength between the oxide scale and the substrate is crucial to the reliability and durability of metallic interconnects in SOFC operating environments. It is necessary, therefore, to establish a methodology to quantify the interfacial adhesion strength between the oxide scale and the metallic interconnect substrate, and furthermore to design and optimize the interconnect material as well as the coating materials to meet the design life of an SOFC system. In this paper, we present an integrated experimental/analytical methodology for quantifying the interfacial adhesion strength between oxide scale and a ferritic stainless steel interconnect. Stair-stepping indentation tests are used in conjunction with subsequent finite element analyses to predict the interfacial strength between the oxide scale and Crofer 22 APU substrate.

Sun, Xin; Liu, Wenning N.; Stephens, Elizabeth V.; Khaleel, Mohammad A.

2008-01-21T23:59:59.000Z

162

Elastocapillary deformations on partially-wetting substrates: rival contact-line models  

E-Print Network [OSTI]

A partially-wetting liquid can deform the underlying elastic substrate upon which it rests. This situation requires the development of theoretical models to describe the wetting forces imparted by the drop onto the solid substrate, particularly those at the contact-line. We construct a general solution using a displacement potential function for the elastic deformations within a finite elastic substrate associated with these wetting forces, and compare the results for several different contact-line models. Our work incorporates internal contributions to the surface stress from both liquid/solid $\\Sigma_{ls}$ and solid/gas $\\Sigma_{sg}$ solid surface tensions (surface stress), which results in a non-standard boundary-value problem that we solve using a dual integral equation. We compare our results to relevant experiments and conclude that the generalization of solid surface tension $\\Sigma_{ls} \

Joshua B. Bostwick; Michael Shearer; Karen E. Daniels

2014-05-01T23:59:59.000Z

163

Passivation coating for flexible substrate mirrors  

DOE Patents [OSTI]

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors. Also, the silver or other reflective metal layer on mirrors comprising thin, lightweight, flexible substrates of metal or polymer sheets coated with glassy layers can be protected with silicon nitride according to this invention.

Tracy, C. Edwin (Golden, CO); Benson, David K. (Golden, CO)

1990-01-01T23:59:59.000Z

164

Methods of selectively incorporating metals onto substrates  

DOE Patents [OSTI]

A method for forming multi-metallic sites on a substrate is disclosed and described. A substrate including active groups such as hydroxyl can be reacted with a pretarget metal complex. The target metal attached to the active group can then be reacted with a secondary metal complex such that an oxidation-reduction (redox) reaction occurs to form a multi-metallic species. The substrate can be a highly porous material such as aerogels, xerogels, zeolites, and similar materials. Additional metal complexes can be reacted to increase catalyst loading or control co-catalyst content. The resulting compounds can be oxidized to form oxides or reduced to form metals in the ground state which are suitable for practical use.

Ernst; Richard D. (Salt Lake City, UT), Eyring; Edward M. (Salt Lake City, UT), Turpin; Gregory C. (Salt Lake City, UT), Dunn; Brian C. (Salt Lake City, UT)

2008-09-30T23:59:59.000Z

165

Thin film photovoltaic device with multilayer substrate  

DOE Patents [OSTI]

A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.

Catalano, Anthony W. (Rushland, PA); Bhushan, Manjul (Wilmington, DE)

1984-01-01T23:59:59.000Z

166

Substrate Recognition Strategy for Botulinum Neurotoxin  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon CoolingSubstrate CdTeSubstrate Recognition

167

Substrate Recognition Strategy for Botulinum Neurotoxin  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon CoolingSubstrate CdTeSubstrate

168

Inverter power module with distributed support for direct substrate cooling  

DOE Patents [OSTI]

Systems and/or methods are provided for an inverter power module with distributed support for direct substrate cooling. An inverter module comprises a power electronic substrate. A first support frame is adapted to house the power electronic substrate and has a first region adapted to allow direct cooling of the power electronic substrate. A gasket is interposed between the power electronic substrate and the first support frame. The gasket is configured to provide a seal between the first region and the power electronic substrate. A second support frame is adapted to house the power electronic substrate and joined to the first support frame to form the seal.

Miller, David Harold (San Pedro, CA); Korich, Mark D. (Chino Hills, CA); Ward, Terence G. (Redondo Beach, CA); Mann, Brooks S. (Redondo Beach, CA)

2012-08-21T23:59:59.000Z

169

Full-wave analysis of superconducting microstrip lines on anisotropic substrates using equivalent surface impedance approach  

SciTech Connect (OSTI)

A computationally efficient full-wave technique is developed to analyze single and coupled superconducting microstrip lines on anisotropic substrates. The optic axis of the dielectric is in the plane of the substrate at an arbitrary angle with respect to the propagation direction. A dyadic Green's function for layered, anisotropic media is used to formulate an integral equation for the current in the strips. To increase the efficiency of the method, the superconducting strips are replaced by equivalent surface impedances which account for the loss and kinetic inductance of the superconductors. The validity of this equivalent surface impedance (ESI) approach is verified by comparing the calculated complex propagation constant and characteristic impedance for superconducting microstrip lines on an isotropic substrate to measured results, and to numerical results by the more rigorous volume-integral equation method. The results calculated using the ESI approach for perfectly conducting coupled lines on an anisotropic substrate agree with the results by the finite-difference time-domain method. This efficient ESI technique is then used to study the effects of the optic axis orientation and the strip width on the characteristics of single and coupled superconducting microstrip lines on M-plane sapphire. The effects of the line separation and operating temperature on the coupled lines are also investigated.

Lee, L.H.; Lyons, W.G.; Orlando, T.P.; Ali, S.M. (Massachusetts Inst. of Tech., Cambridge, MA (United States). Dept. of Electrical Engineering and Computer Science); Lyons, W.G. (Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.); Withers, R.S. (Conductus, Inc., Sunnyvale, CA (United States))

1993-12-01T23:59:59.000Z

170

CX-001307: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Harmar)CX(s) Applied: B3.6Date: 03/19/2010Location(s): Harmar, PennsylvaniaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

171

CX-001309: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Monroeville)CX(s) Applied: B3.6Date: 03/19/2010Location(s): Monroeville, PennsylvaniaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

172

CX-001310: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Ewing)CX(s) Applied: B3.6Date: 03/19/2010Location(s): Ewing, New JerseyOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

173

CX-001308: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Low-Cost Integrated Substrate for Organic Light-Emitting Diode (OLED) Lighting (Allison Park)CX(s) Applied: A2, A9Date: 03/19/2010Location(s): Allison Park, PennsylvaniaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

174

ZnO buffer layer for metal films on silicon substrates  

DOE Patents [OSTI]

Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

Ihlefeld, Jon

2014-09-16T23:59:59.000Z

175

Technical Note Graphene: Substrate preparation and introduction  

E-Print Network [OSTI]

of Texas, Austin, TX, USA c Electron Microscopy Department of Materials Sciences, University of Ulm, Ulm September 2010 Accepted 4 October 2010 Available online xxxx Keywords: Graphene Graphene oxide Cryo-EM graphene substrates as well as their ongoing development. Ã? 2010 Elsevier Inc. All rights reserved. 1

176

Aerospace Applications for OLED Lighting  

Energy Savers [EERE]

2015 Boeing. All rights reserved. Export Controlled ECCN: 9E991 NLR Aerospace economics drive long development cycles and even longer product lifecycles * Development of a...

177

OLED Basics | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of EnergyEnergyENERGYWomen OwnedofDepartment ofJaredOakscience-based,OHA FOIA Cases Archive File OHAOLEDs

178

2014 OLED Stakeholder Meeting Report  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-Up from theDepartment(October-December 2013 issue ofOffice | Department44ScopeUnified2014

179

Optical substrate materials for synchrotron radiation beamlines  

SciTech Connect (OSTI)

The authors consider the materials choices available for making optical substrates for synchrotron radiation beam lines. They find that currently the optical surfaces can only be polished to the required finish in fused silica and other glasses, silicon, CVD silicon carbide, electroless nickel and 17-4 PH stainless steel. Substrates must therefore be made of one of these materials or of a metal that can be coated with electroless nickel. In the context of material choices for mirrors they explore the issues of dimensional stability, polishing, bending, cooling, and manufacturing strategy. They conclude that metals are best from an engineering and cost standpoint while the ceramics are best from a polishing standpoint. They then give discussions of specific materials as follows: silicon carbide, silicon, electroless nickel, Glidcop{trademark}, aluminum, precipitation-hardening stainless steel, mild steel, invar and superinvar. Finally they summarize conclusions and propose ideas for further research.

Howells, M.R. [Lawrence Berkeley National Lab., CA (United States). Advanced Light Source; Paquin, R.A. [Univ. of Arizona, Tucson, AZ (United States). Optical Sciences Center

1997-06-01T23:59:59.000Z

180

Diamond as an inert substrate of graphene  

SciTech Connect (OSTI)

Interaction between graphene and semiconducting diamond substrate has been examined with large-scale density functional theory calculations. Clean and hydrogenated diamond (100) and (111) surfaces have been studied. It turns out that weak van der Waals interactions dominate for graphene on all these surfaces. High carrier mobility of graphene is almost not affected, except for a negligible energy gap opening at the Dirac point. No charge transfer between graphene and diamond (100) surfaces is detected, while different charge-transfer complexes are formed between graphene and diamond (111) surfaces, inducing either p-type or n-type doping on graphene. Therefore, diamond can be used as an excellent substrate of graphene, which almost keeps its electronic structures at the same time providing the flexibility of charge doping.

Hu Wei; Li Zhenyu; Yang Jinlong [Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China)

2013-02-07T23:59:59.000Z

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Enhanced photoacoustic detection using photonic crystal substrate  

SciTech Connect (OSTI)

This paper demonstrates the enhanced photoacoustic sensing of surface-bound light absorbing molecules and metal nanoparticles using a one-dimensional photonic crystal (PC) substrate. The PC structure functions as an optical resonator at the wavelength where the analyte absorption is strong. The optical resonance of the PC sensor provides an intensified evanescent field with respect to the excitation light source and results in enhanced optical absorption by surface-immobilized samples. For the analysis of a light absorbing dye deposited on the PC surface, the intensity of photoacoustic signal was enhanced by more than 10-fold in comparison to an un-patterned acrylic substrate. The technique was also applied to detect gold nanorods and exhibited more than 40 times stronger photoacoustic signals. The demonstrated approach represents a potential path towards single molecule absorption spectroscopy with greater performance and inexpensive instrumentation.

Zhao, Yunfei; Liu, Kaiyang [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); McClelland, John [Ames Laboratory-USDOE, Ames, Iowa 50011 (United States); Department of Mechanical Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Biochemistry, Biophysics, and Molecular Biology, Iowa State University, Ames, Iowa 50011 (United States); Lu, Meng, E-mail: menglu@iastate.edu [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Mechanical Engineering, Iowa State University, Ames, Iowa 50011 (United States)

2014-04-21T23:59:59.000Z

182

Hard Bottom Substrate Monitoring Horns Rev Offshore Wind Farm  

E-Print Network [OSTI]

Hard Bottom Substrate Monitoring Horns Rev Offshore Wind Farm Annual Status Report 2003 #12;Hard Bottom Substrate Monitoring Horns Rev Offshore Wind Farm Annual Status Report 2003 Published: 14 May 2004

183

Microstructure and properties of copper thin films on silicon substrates  

E-Print Network [OSTI]

on Si (100) and Si (110) substrates, respectively. Single crystal Cu (111) films have a high density of growth twins, oriented parallel to the substrate surface due to low twin boundary energy and a high deposition rate. The yield strengths...

Jain, Vibhor Vinodkumar

2009-05-15T23:59:59.000Z

184

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Substrate-Induced Band-Gap Opening in Epitaxial Graphene Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Wednesday, 26 March 2008 00:00 Prospective challengers to...

185

Planar Integrated Optics and astronomical interferometry  

E-Print Network [OSTI]

Integrated optics (IO) is an optical technology that allows to reproduce optical circuits on a planar substrate. Since 1996, we have investigated the potentiality of IO in the framework of astronomical single mode interferometry. We review in this paper the principles of IO, the requirements for interferometry and the corresponding solutions offered by IO, the results of component characterization and the possible fields of application.

Pierre Kern; Jean-Philippe Berger; Pierre Haguenauer; Fabien Malbet; Karine Perraut

2005-08-01T23:59:59.000Z

186

Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint  

SciTech Connect (OSTI)

Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-performance superstrate devices ({approx}17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M.; Gessert, T. A.

2012-06-01T23:59:59.000Z

187

Metallic substrates for high temperature superconductors  

DOE Patents [OSTI]

A biaxially textured face-centered cubic metal article having grain boundaries with misorientation angles greater than about 8.degree. limited to less than about 1%. A laminate article is also disclosed having a metal substrate first rolled to at least about 95% thickness reduction followed by a first annealing at a temperature less than about 375.degree. C. Then a second rolling operation of not greater than about 6% thickness reduction is provided, followed by a second annealing at a temperature greater than about 400.degree. C. A method of forming the metal and laminate articles is also disclosed.

Truchan, Thomas G. (Chicago, IL); Miller, Dean J. (Darien, IL); Goretta, Kenneth C. (Downers Grove, IL); Balachandran, Uthamalingam (Hinsdale, IL); Foley, Robert (Chicago, IL)

2002-01-01T23:59:59.000Z

188

Thin film reactions on alloy semiconductor substrates  

SciTech Connect (OSTI)

The interactions between Pt and In{sub .53}Ga{sub .47}As have been studied. In{sub .53}Ga{sub .47}As substrates with 70nm Pt films were encapsulated in SiO{sub 2}, and annealed up to 600{degree}C in flowing forming gas. The composition and morphology of the reaction product phases were studied using x-ray diffraction, Auger depth profiling, and transmission electron microscopy. The reaction kinetics were examined with Rutherford Backscattering. Results show that Pt/In{sub .53}Ga{sub .47}As reacts to form many of the reaction products encountered in the Pt/GaAs and Pt/InP reactions: PtGa, Pt{sub 3}Ga, and PtAs{sub 2}. In addition, a ternary phase, Pt(In:Ga){sub 2}, develops, which is a solid solution between PtIn{sub 2} and PtGa{sub 2}. The amount of Ga in the ternary phase increases with annealing temperature, which causes a decrease in the lattice parameter of the phase. The reaction products show a tendency to form layered structures, especially for higher temperatures and longer annealing times. Unlike the binary case, the PtAs{sub 2}, phase is randomly oriented on the substrate, and is intermingle with a significant amount of Pt(In:Ga){sub 2}. Following Pt/In{sub .53}Ga{sub .47}As reactions, two orientation relationships between the Pt(In:Ga){sub 2} product phase and the substrate were observed, despite the large mismatch with the substrate ({approximately}8%). For many metal/compound semiconductor interactions, the reaction rate is diffusion limited, i.e. exhibits a parabolic dependence on time. An additional result of this study was the development of an In-rich layer beneath the reacted layer. The Auger depth profile showed a substantial increase in the sample at this layer. This is a significant result for the production of ohmic contacts, as the Schottky barrier height in this system lower for higher In concentrations. 216 refs.

Olson, D.A.

1990-11-01T23:59:59.000Z

189

Substrate Recognition Strategy for Botulinum Neurotoxin  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon CoolingSubstrate CdTe

190

Light emitting device having peripheral emissive region  

DOE Patents [OSTI]

Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.

Forrest, Stephen R

2013-05-28T23:59:59.000Z

191

Tailoring broadband light trapping of GaAs and Si substrates by self-organised nanopatterning  

SciTech Connect (OSTI)

We report on the formation of high aspect ratio anisotropic nanopatterns on crystalline GaAs (100) and Si (100) substrates exploiting defocused Ion Beam Sputtering assisted by a sacrificial self-organised Au stencil mask. The tailored optical properties of the substrates are characterised in terms of total reflectivity and haze by means of integrating sphere measurements as a function of the morphological modification at increasing ion fluence. Refractive index grading from sub-wavelength surface features induces polarisation dependent anti-reflection behaviour in the visible-near infrared (VIS-NIR) range, while light scattering at off-specular angles from larger structures leads to very high values of the haze functions in reflection. The results, obtained for an important class of technologically relevant materials, are appealing in view of photovoltaic and photonic applications aiming at photon harvesting in ultrathin crystalline solar cells.

Martella, C.; Chiappe, D.; Mennucci, C.; Buatier de Mongeot, F. [Dipartimento di Fisica, Università di Genova, via Dodecaneso 33, I-16146 Genova (Italy)

2014-05-21T23:59:59.000Z

192

Towards the Integration of APECS and VE-Suite for Virtual Power Plant Co-Simulation  

SciTech Connect (OSTI)

Process modeling and simulation tools are widely used for the design and operation of advanced power generation systems. These tools enable engineers to solve the critical process systems engineering problems that arise throughout the lifecycle of a power plant, such as designing a new process, troubleshooting a process unit or optimizing operations of the full process. To analyze the impact of complex thermal and fluid flow phenomena on overall power plant performance, the Department of Energy’s (DOE) National Energy Technology Laboratory (NETL) has developed the Advanced Process Engineering Co-Simulator (APECS). The APECS system is an integrated software suite that combines process simulation (e.g., Aspen Plus) and high-fidelity equipment simulations such as those based on computational fluid dynamics (CFD), together with advanced analysis capabilities including case studies, sensitivity analysis, stochastic simulation for risk/uncertainty analysis, and multi-objective optimization. In this paper we discuss the initial phases of the integration of the APECS system with the immersive and interactive virtual engineering software, VE-Suite, developed at Iowa State University and Ames Laboratory. VE-Suite uses the ActiveX (OLE Automation) controls in the Aspen Plus process simulator wrapped by the CASI library developed by Reaction Engineering International to run process/CFD co-simulations and query for results. This integration represents a necessary step in the development of virtual power plant co-simulations that will ultimately reduce the time, cost, and technical risk of developing advanced power generation systems.

Zitney, S.E.; McCorkle, D. (Iowa State University, Ames, IA); Yang, C. (Reaction Engineering International, Salt Lake City, UT); Jordan, T.; Swensen, D. (Reaction Engineering International, Salt Lake City, UT); Bryden, M. (Iowa State University, Ames, IA)

2007-05-01T23:59:59.000Z

193

Substrate structures for InP-based devices  

DOE Patents [OSTI]

A substrate structure for an InP-based semiconductor device having an InP based film is disclosed. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at one end to the GaAs layer and substantially lattice-matched at the opposite end to the InP-based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device.

Wanlass, Mark W. (Golden, CO); Sheldon, Peter (Lakewood, CO)

1990-01-01T23:59:59.000Z

194

Substrate structures for InP-based devices  

SciTech Connect (OSTI)

A substrate structure for an InP-based semiconductor device having an InP based film is described. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at the opposite end to the InP=based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device.

Wanlass, M.W.; Sheldon, P.

1990-10-16T23:59:59.000Z

195

Improved substrate structures for InP-based devices  

SciTech Connect (OSTI)

A substrate structure for an InP-based semiconductor device having an InP-based film is disclosed. The substrate structure includes a substrate region having a light-weight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice matched at its one end to the GaAs layer and substantially lattice matched at its opposite end to the InP-based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region and the InP-based device. 1 fig.

Wanlass, M.; Sheldon, P.

1988-09-30T23:59:59.000Z

196

Vitreous carbon mask substrate for X-ray lithography  

DOE Patents [OSTI]

The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

Aigeldinger, Georg (Livermore, CA); Skala, Dawn M. (Fremont, CA); Griffiths, Stewart K. (Livermore, CA); Talin, Albert Alec (Livermore, CA); Losey, Matthew W. (Livermore, CA); Yang, Chu-Yeu Peter (Dublin, CA)

2009-10-27T23:59:59.000Z

197

Transverse-longitudinal integrated resonator  

DOE Patents [OSTI]

A transverse-longitudinal integrated optical resonator (TLIR) is disclosed which includes a waveguide, a first and a second subwavelength resonant grating in the waveguide, and at least one photonic band gap resonant structure (PBG) in the waveguide. The PBG is positioned between the first and second subwavelength resonant gratings. An electro-optic waveguide material may be used to permit tuning the TLIR and to permit the TLIR to perform signal modulation and switching. The TLIR may be positioned on a bulk substrate die with one or more electronic and optical devices and may be communicably connected to the same. A method for fabricating a TLIR including fabricating a broadband reflective grating is disclosed. A method for tuning the TLIR's transmission resonance wavelength is also disclosed.

Hutchinson, Donald P. (Knoxville, TN); Simpson, Marcus L. (Knoxville, TN); Simpson, John T. (Knoxville, TN)

2003-03-11T23:59:59.000Z

198

Processing Effects for Integrated PZT: Residual Stress, Thickness, and Dielectric Properties  

E-Print Network [OSTI]

Processing Effects for Integrated PZT: Residual Stress, Thickness, and Dielectric Properties Ryan J (PZT) films integrated onto Pt/Ti/SiO2//Si substrates are reported. Sol­gel synthesis and deposition orientation (nominally (111) fiber tex- tured), and measured residual stress. The Stoney method, using laser

Sottos, Nancy R.

199

amorphous carbon substrates: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

CaF2 films on amorphous substrates Wang, Gwo-Ching 5 NICKELHYDROGENATED AMORPHOUS CARBON COMPOSITE FILMS DEPOSITED IN ACETYLENEARGON MICROWAVE PLASMA DISCHARGE CiteSeer...

200

Method For Making Selected Regions Of A Substrate  

DOE Patents [OSTI]

Described herein is a method for providing a clean edge at the interface of a portion of a substrate coated with a coating system and an adjacent portion of the substrate which is uncoated. The method includes the step of forming a zone of non-adherence on the substrate portion which is to be uncoated, prior to application of the coating system. The zone of non-adherence is adjacent the interface, so that the coating system will not adhere to the zone of non-adherence, but will adhere to the portion of the substrate which is to be coated with the coating system.

Fusaro, Jr., Robert Anthony (Cobleskill, NY); Bethel, Timothy Francis (Ballston Lake, NY)

2003-07-15T23:59:59.000Z

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Substrate Studies of an Electrically-Assisted Diesel Particulate...  

Broader source: Energy.gov (indexed) [DOE]

directly determine cordierite substrate temperature during operation on engine * Fiber optics have been polished with angled tip to enable side view of channel wall Optical...

202

Direct Water-Cooled Power Electronics Substrate Packaging  

Broader source: Energy.gov (indexed) [DOE]

Water-Cooled Power Electronics Substrate Packaging Randy H. Wiles Oak Ridge National Laboratory June 10, 2010 Project ID: APE001 This presentation does not contain any proprietary,...

203

aluminium oxide substrates: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Huang, Shih-Yu 2009-01-01 99 Fabrication And Characterization Of Barium Titanate Thin Film On Polycrystalline Nickel Substrate. Open Access Theses and Dissertations Summary:...

204

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Substrate-Induced Band-Gap Opening in Epitaxial Graphene Print Prospective challengers to silicon, the long-reigning king of semiconductors for computer chips and other electronic...

205

ORNL: Low-Cost Direct Bonded Aluminum (DBA) Substrates (Agreement...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Direct Bonded Aluminum (DBA) Substrates (Agreement ID:23278) 2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer...

206

ORNL: Low-Cost Direct Bonded Aluminum (DBA) Substrates (Agreement...  

Broader source: Energy.gov (indexed) [DOE]

Low-Cost Direct Bonded Aluminum (DBA) Substrates H. -T. Lin, A. A. Wereszczak, and S. Waters Oak Ridge National Laboratory This presentation does not contain any proprietary,...

207

Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices  

E-Print Network [OSTI]

Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical ...

Bi, Lei

208

Utilization of Smart Materials and Predictive Modeling to Integrate Intracellular Dynamics with Cell Biomechanics and Collective Tissue Behavior  

E-Print Network [OSTI]

Utilization of Smart Materials and Predictive Modeling to Integrate Intracellular Dynamics important structures inside cells. New "smart" material will be used to trigger changes to cell movement Medical University Control of Cell Polarization by Smart Material Substrates Multiscale Imaging Multiscale

Mather, Patrick T.

209

Linear Tapered Slot Antenna with Substrate Integrated Waveguide Feed Ian Wood*(1)  

E-Print Network [OSTI]

antennas. Several TSA types exist, the most common being linear-tapered (LTSA), Vivaldi-tapered (VTSA) The beamwidths of CWSA's are typically the smallest, followed by LTSA's and VTSA's. As one would expect, the situation is opposite for the side lobe level. As such LTSA's are an ideal compromise between beamwidth

Bornemann, Jens

210

Integration of single-crystal devices with flexible substrates using conductive adhesive layers  

E-Print Network [OSTI]

metal- semiconductor junction, where the low-temperature annealing may have helped mitigate oxidation effects and form a palladium silicide,

Doran, Christopher Kyle Gregory

2011-01-01T23:59:59.000Z

211

ISBN 3-938345-05-5 Int. Meeting on Substrate-Integrated Microelectrodes, 2008 1  

E-Print Network [OSTI]

: electrochemical circu- its including for example Warburg impedance show better concordance with experimental data the electrode marked in red in Fig.4(a) 30 min after the addition of a KCl 3M medium, compared to Z of a theoretical RC// circuit with R=10 M and C=100nF. The equivalent electrochemical circuit fitting MEA Z(f) data

Paris-Sud XI, Université de

212

Integration of inverted InGaAs MSM array on Si substrate through low temperature  

E-Print Network [OSTI]

to reduce thermal stress at the interface. Huang et al. [2] presented a thin-film InGaAs MSM PD bonded to Si layers including those on InGaAs MSMs and Si/SiO2 is 860 nm. eching window InP epi-layer SiO2 Si Ti Au Au HCl:H3PO4 (1:1) to open a photodetection window. Citric acid was used to remove the InGaAs etching

Huang, Zhaoran "Rena"

213

RNA Editing in Trypanosomes: Substrate Recognition and its Integration to RNA Metabolism  

E-Print Network [OSTI]

-Linking and Editing assays ............................................................................................. 72 15 p60 Co-localizes with the KREPA2 Subunit ........................................... 73 16 Analysis of the Left Helix... nucleotide insertions in mitochondrial transcripts of trypanosomes and Physarum (10). Paramyxoviruses exploit editing of mRNA to direct frameshifting between alternative ORFs (14,15). Start and stop codons are established by uridine insertion...

Hernandez, Alfredo J.

2012-02-14T23:59:59.000Z

214

Integration of single-crystal devices with flexible substrates using conductive adhesive layers  

E-Print Network [OSTI]

Journal of Microelectromechanical Systems. 12, 256 (2003).in fabricating microelectromechanical systems. 1.1: Current

Doran, Christopher Kyle Gregory

2011-01-01T23:59:59.000Z

215

Analysis of Full-Wave Conductor System Impedance over Substrate Using Novel Integration Techniques  

E-Print Network [OSTI]

Xin Hu M.I.T. xinhu@mit.edu Jung Hoon Lee M.I.T. junghoon@mit.edu Jacob White M.I.T. white and that copies bear this notice and the full citation on the first page. To copy otherwise, to republish, to post

Daniel, Luca

216

Thermal Control & System Integration  

Broader source: Energy.gov [DOE]

The thermal control and system integration activity focuses on issues such as the integration of motor and power control technologies and the development of advanced thermal control technologies....

217

Distribution Grid Integration  

Broader source: Energy.gov [DOE]

The DOE Systems Integration team funds distribution grid integration research and development (R&D) activities to address the technical issues that surround distribution grid planning,...

218

Reactive ion etched substrates and methods of making and using  

DOE Patents [OSTI]

Disclosed herein are substrates comprising reactive ion etched surfaces and specific binding agents immobilized thereon. The substrates may be used in methods and devices for assaying or isolating analytes in a sample. Also disclosed are methods of making the reactive ion etched surfaces.

Rucker, Victor C. (San Francisco, CA); Shediac, Rene (Oakland, CA); Simmons, Blake A. (San Francisco, CA); Havenstrite, Karen L. (New York, NY)

2007-08-07T23:59:59.000Z

219

Substrate-Free Gas-Phase Synthesis of Graphene Sheets  

E-Print Network [OSTI]

Substrate-Free Gas-Phase Synthesis of Graphene Sheets Albert Dato,*, Velimir Radmilovic, Zonghoon graphene sheets in the gas phase using a substrate-free, atmospheric-pressure microwave plasma reactor. Graphene sheets were synthesized by passing liquid ethanol droplets into an argon plasma. The graphene

Frenklach, Michael

220

An aluminum resist substrate for microfabrication by LIGA.  

SciTech Connect (OSTI)

Resist substrates used in the LIGA process must provide high initial bond strength between the substrate and resist, little degradation of the bond strength during x-ray exposure, acceptable undercut rates during development, and a surface enabling good electrodeposition of metals. Additionally, they should produce little fluorescence radiation and give small secondary doses in bright regions of the resist at the substrate interface. To develop a new substrate satisfying all these requirements, we have investigated secondary resist doses due to electrons and fluorescence, resist adhesion before exposure, loss of fine features during extended development, and the nucleation and adhesion of electrodeposits for various substrate materials. The result of these studies is a new anodized aluminum substrate and accompanying methods for resist bonding and electrodeposition. We demonstrate successful use of this substrate through all process steps and establish its capabilities via the fabrication of isolated resist features down to 6 {micro}m, feature aspect ratios up to 280 and electroformed nickel structures at heights of 190 to 1400 {micro}m. The minimum mask absorber thickness required for this new substrate ranges from 7 to 15 {micro}m depending on the resist thickness.

Kelly, James J.; Boehme, Dale R.; Hauck, Cheryl A. (Lawrence Berkeley National Laboratory, Berkeley, CA); Yang, Chu-Yeu Peter; Hunter, Luke L.; Griffiths, Stewart K.; McLean, Dorrance E.; Aigeldinger, Georg; Hekmaty, Michelle A.; Hachman, John T.; Losey, Matthew W.; Skala, Dawn M.; Korellis, John S.; Friedmann, Thomas Aquinas (Sandia National Laboratories, Albuquerque, NM); Yang, Nancy Y. C.; Lu, Wei-Yang

2005-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Plasticity in fretting of coated substrates Matthew R. Begleya  

E-Print Network [OSTI]

Plasticity in fretting of coated substrates Matthew R. Begleya , John W. Hutchinsonb of the plastic deformation in a metal substrate fretted by a ¯at- bottomed circular peg under steady normal load of the corners of the peg. Deformation within the plastic zone is characterized, including regions of elastic

Hutchinson, John W.

222

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES  

E-Print Network [OSTI]

NANO-INDENTATION OF COPPER THIN FILMS ON SILICON SUBSTRATES S. Suresh1 , T.-G. Nieh2 and B.W. Choi2: Mechanical properties; Nano-indentation; Thin films; Copper; Dislocations Introduction Indentation methods films on substrates (e.g., [2,3]) using instrumented indentation. Nano-indentation studies of thin films

Suresh, Subra

223

Substrate comprising a nanometer-scale projection array  

DOE Patents [OSTI]

A method for forming a substrate comprising nanometer-scale pillars or cones that project from the surface of the substrate is disclosed. The method enables control over physical characteristics of the projections including diameter, sidewall angle, and tip shape. The method further enables control over the arrangement of the projections including characteristics such as center-to-center spacing and separation distance.

Cui, Yi; Zhu, Jia; Hsu, Ching-Mei; Connor, Stephen T; Yu, Zongfu; Fan, Shanhui; Burkhard, George

2012-11-27T23:59:59.000Z

224

Order on disorder: Copper phthalocyanine thin films on technical substrates  

SciTech Connect (OSTI)

We have studied the molecular orientation of the commonly used organic semiconductor copper phthalocyanine (CuPC) grown as thin films on the technically relevant substrates indium tin oxide, oxidized Si, and polycrystalline gold using polarization-dependent x-ray absorption spectroscopy, and compare the results with those obtained from single crystalline substrates [Au(110) and GeS(001)]. Surprisingly, the 20{endash}50 nm thick CuPC films on the technical substrates are as highly ordered as on the single crystals. Importantly, however, the molecular orientation in the two cases is radically different: the CuPC molecules stand on the technical substrates and lie on the single crystalline substrates. The reasons for this and its consequences for our understanding of the behavior of CuPC films in devices are discussed. {copyright} 2001 American Institute of Physics.

Peisert, H.; Schwieger, T.; Auerhammer, J. M.; Knupfer, M.; Golden, M. S.; Fink, J.; Bressler, P. R.; Mast, M.

2001-07-01T23:59:59.000Z

225

Lattice matched semiconductor growth on crystalline metallic substrates  

DOE Patents [OSTI]

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

Norman, Andrew G; Ptak, Aaron J; McMahon, William E

2013-11-05T23:59:59.000Z

226

Charge-free method of forming nanostructures on a substrate  

DOE Patents [OSTI]

A charge-free method of forming a nanostructure at low temperatures on a substrate. A substrate that is reactive with one of atomic oxygen and nitrogen is provided. A flux of neutral atoms of least one of oxygen and nitrogen is generated within a laser-sustained-discharge plasma source and a collimated beam of energetic neutral atoms and molecules is directed from the plasma source onto a surface of the substrate to form the nanostructure. The energetic neutral atoms and molecules in the beam have an average kinetic energy in a range from about 1 eV to about 5 eV.

Hoffbauer; Mark (Los Alamos, NM), Akhadov; Elshan (Los Alamos, NM)

2010-07-20T23:59:59.000Z

227

Coupling effects in inductive discharges with radio frequency substrate biasing  

SciTech Connect (OSTI)

Low pressure inductively coupled plasmas (ICP) operated in neon at 27.12 MHz with capacitive substrate biasing (CCP) at 13.56 MHz are investigated by phase resolved optical emission spectroscopy, voltage, and current measurements. Three coupling mechanisms are found potentially limiting the separate control of ion energy and flux: (i) Sheath heating due to the substrate biasing affects the electron dynamics even at high ratios of ICP to CCP power. At fixed CCP power, (ii) the substrate sheath voltage and (iii) the amplitude as well as frequency of plasma series resonance oscillations of the RF current are affected by the ICP power.

Schulze, J.; Schuengel, E.; Czarnetzki, U.

2012-01-09T23:59:59.000Z

228

Substrate Recognition Strategy for Botulinum Neurotoxin Serotype A  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon CoolingSubstrate CdTeSubstrateSubstrate

229

Wind Integration Study Methods (Presentation)  

SciTech Connect (OSTI)

This presentation provides an overview of common elements, differences, integration costs, and errors in integration analysis.

Milligan, M.; Kirby, B.

2011-04-01T23:59:59.000Z

230

Selective Area Epitaxy of CdTe on Nanopatterned Substrates.  

E-Print Network [OSTI]

?? HgCdTe/Si devices can potentially be significantly improved by the use of nanopatterned substrate structures on Si to control point and extended crystal defects. This… (more)

Fahey, Stephen

2013-01-01T23:59:59.000Z

231

Selective Area Epitaxy of CdTe on Nanopatterned Substrates.  

E-Print Network [OSTI]

??HgCdTe/Si devices can potentially be significantly improved by the use of nanopatterned substrate structures on Si to control point and extended crystal defects. This thesis… (more)

Fahey, Stephen D.

2012-01-01T23:59:59.000Z

232

Nanofabrication on unconventional substrates using transferred hard masks  

E-Print Network [OSTI]

A major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or ...

Li, Luozhou

233

Method for formation of thin film transistors on plastic substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

1998-10-06T23:59:59.000Z

234

Method for formation of thin film transistors on plastic substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

1998-10-06T23:59:59.000Z

235

Semiconductor nanowire array: potential substrates for photocatalysis and photovoltaics  

E-Print Network [OSTI]

Semiconductor nanowire array: potential substrates for photocatalysis and photovoltaics Yiying Wu, these nanowire arrays could find unique applications in photocatalysis and photovoltaics. KEY WORDS luminescence efficiency [5,6], enhancement of thermoelectric figure of merit [7] and lowered lasing threshold

Yang, Peidong

236

Tearing Graphene Sheets From Adhesive Substrates Produces Tapered Nanoribbons  

E-Print Network [OSTI]

Thin films Tearing Graphene Sheets From Adhesive Substrates Produces Tapered Nanoribbons Dipanjan Sen, Kostya S. Novoselov, Pedro M. Reis, and Markus J. Buehler* Graphene is a truly two- film materials have been studied extensively, the key mechanical properties of graphene

Entekhabi, Dara

237

Fabrication and Characterization of Through-Substrate Interconnects  

E-Print Network [OSTI]

We developed a through-substrate copper-damascene interconnect technology in silicon with minimal impedance. Via impedance was extracted using parameter measurements at 50 GHz that were matched to simple circuit models. ...

del Alamo, Jesus A.

238

Determining graphene adhesion via substrate-regulated morphology of graphene  

E-Print Network [OSTI]

Determining graphene adhesion via substrate-regulated morphology of graphene Zhao Zhang and Teng Li Institute of Physics. Related Articles Identification of graphene crystallographic orientation by atomic two-dimensional, epitaxially-grown, nanostructured graphene for study of single molecule

Li, Teng

239

Low-Cost Direct Bonded Aluminum (DBA) Substrates  

Broader source: Energy.gov (indexed) [DOE]

Low-Cost Direct Bonded Aluminum (DBA) Substrates H. -T. Lin, A. A. Wereszczak, M. L. Santella, and G. Muralidharan Oak Ridge National Laboratory (ORNL) This presentation does not...

240

Buried waste integrated demonstration technology integration process  

SciTech Connect (OSTI)

A Technology integration Process was developed for the Idaho National Energy Laboratories (INEL) Buried Waste Integrated Demonstration (BWID) Program to facilitate the transfer of technology and knowledge from industry, universities, and other Federal agencies into the BWID; to successfully transfer demonstrated technology and knowledge from the BWID to industry, universities, and other Federal agencies; and to share demonstrated technologies and knowledge between Integrated Demonstrations and other Department of Energy (DOE) spread throughout the DOE Complex. This document also details specific methods and tools for integrating and transferring technologies into or out of the BWID program. The document provides background on the BWID program and technology development needs, demonstrates the direction of technology transfer, illustrates current processes for this transfer, and lists points of contact for prospective participants in the BWID technology transfer efforts. The Technology Integration Process was prepared to ensure compliance with the requirements of DOE's Office of Technology Development (OTD).

Ferguson, J.S.; Ferguson, J.E.

1992-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Buried waste integrated demonstration technology integration process  

SciTech Connect (OSTI)

A Technology integration Process was developed for the Idaho National Energy Laboratories (INEL) Buried Waste Integrated Demonstration (BWID) Program to facilitate the transfer of technology and knowledge from industry, universities, and other Federal agencies into the BWID; to successfully transfer demonstrated technology and knowledge from the BWID to industry, universities, and other Federal agencies; and to share demonstrated technologies and knowledge between Integrated Demonstrations and other Department of Energy (DOE) spread throughout the DOE Complex. This document also details specific methods and tools for integrating and transferring technologies into or out of the BWID program. The document provides background on the BWID program and technology development needs, demonstrates the direction of technology transfer, illustrates current processes for this transfer, and lists points of contact for prospective participants in the BWID technology transfer efforts. The Technology Integration Process was prepared to ensure compliance with the requirements of DOE`s Office of Technology Development (OTD).

Ferguson, J.S.; Ferguson, J.E.

1992-04-01T23:59:59.000Z

242

Substrates suitable for deposition of superconducting thin films  

DOE Patents [OSTI]

A superconducting system for the lossless transmission of electrical current comprising a thin film of superconducting material Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x epitaxially deposited upon a KTaO.sub.3 substrate. The KTaO.sub.3 is an improved substrate over those of the prior art since the it exhibits small lattice constant mismatch and does not chemically react with the superconducting film.

Feenstra, Roeland (Oak Ridge, TN); Boatner, Lynn A. (Oak Ridge, TN)

1993-01-01T23:59:59.000Z

243

Formation of thin-film resistors on silicon substrates  

DOE Patents [OSTI]

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

1988-11-01T23:59:59.000Z

244

Plasma Enhanced Chemical Vapor Deposition on Living Substrates: Development, Characterization, and Biological Applications  

E-Print Network [OSTI]

This dissertation proposed the idea of “plasma-enhanced chemical vapor deposition on living substrates (PECVD on living substrates)” to bridge the gap between the thin film deposition technology and the biological and living substrates. This study...

Tsai, Tsung-Chan 1982-

2012-12-05T23:59:59.000Z

245

Apparatus and method for depositing coating onto porous substrate  

DOE Patents [OSTI]

Disclosed is an apparatus for forming a chemically vapor deposited coating on a porous substrate where oxygen from a first gaseous reactant containing a source of oxygen permeates through the pores of the substrate to react with a second gaseous reactant that is present on the other side of the substrate. The apparatus includes means for controlling the pressure and flow rate of each gaseous reactant, a manometer for measuring the difference in pressure between the gaseous reactants on each side of the substrate, and means for changing the difference in pressure between the gaseous reactants. Also disclosed is a method of detecting and closing cracks in the coating by reducing the pressure difference between the two gaseous reactants whenever the pressure difference falls suddenly after gradually rising, then again increasing the pressure difference on the two gases. The attack by the by-products of the reaction on the substrate are reduced by maintaining the flow rate of the first reactant through the pores of the substrate. 1 fig.

Isenberg, A.O.; Zymboly, G.E.

1986-09-02T23:59:59.000Z

246

Apparatus and method for depositing coating onto porous substrate  

DOE Patents [OSTI]

Disclosed is an apparatus for forming a chemically vapor deposited coating on a porous substrate where oxygen from a first gaseous reactant containing a source of oxygen permeates through the pores of the substrate to react with a second gaseous reactant that is present on the other side of the substrate. The apparatus includes means for controlling the pressure and flow rate of each gaseous reactant, a manometer for measuring the difference in pressure between the gaseous reactants on each side of the substrate, and means for changing the difference in pressure between the gaseous reactants. Also disclosed is a method of detecting and closing cracks in the coating by reducing the pressure difference between the two gaseous reactants whenever the pressure difference falls suddenly after gradually rising, then again increasing the pressure difference on the two gases. The attack by the by-products of the reaction on the substrate are reduced by maintaining the flow rate of the first reactant through the pores of the substrate.

Isenberg, Arnold O. (Forest Hills Boro, PA); Zymboly, Gregory E. (Penn Hills Township, Allegheny County, PA)

1986-01-01T23:59:59.000Z

247

INTEGRATING PHOTOVOLTAIC SYSTEMS  

E-Print Network [OSTI]

INTEGRATING PHOTOVOLTAIC SYSTEMS INTO PUBLIC SECTOR PERFORMANCE CONTRACTS IN DELAWARE FINAL for Energy and Environmental Policy University of Delaware February 2006 #12;INTEGRATING PHOTOVOLTAIC..................................................................................................... 1 1.2 Photovoltaics in Performance Contracts: An Overview

Delaware, University of

248

Monolithic integration of a MOSFET with a MEMS device  

DOE Patents [OSTI]

An integrated microelectromechanical system comprises at least one MOSFET interconnected to at least one MEMS device on a common substrate. A method for integrating the MOSFET with the MEMS device comprises fabricating the MOSFET and MEMS device monolithically on the common substrate. Conveniently, the gate insulator, gate electrode, and electrical contacts for the gate, source, and drain can be formed simultaneously with the MEMS device structure, thereby eliminating many process steps and materials. In particular, the gate electrode and electrical contacts of the MOSFET and the structural layers of the MEMS device can be doped polysilicon. Dopant diffusion from the electrical contacts is used to form the source and drain regions of the MOSFET. The thermal diffusion step for forming the source and drain of the MOSFET can comprise one or more of the thermal anneal steps to relieve stress in the structural layers of the MEMS device.

Bennett, Reid (Albuquerque, NM); Draper, Bruce (Albuquerque, MN)

2003-01-01T23:59:59.000Z

249

Wafer Fusion for Integration of Semiconductor Materials and Devices  

SciTech Connect (OSTI)

We have developed a wafer fusion technology to achieve integration of semiconductor materials and heterostructures with widely disparate lattice parameters, electronic properties, and/or optical properties for novel devices not now possible on any one substrate. Using our simple fusion process which uses low temperature (400-600 C) anneals in inert N{sub 2} gas, we have extended the scope of this technology to examine hybrid integration of dissimilar device technologies. As a specific example, we demonstrate wafer bonding vertical cavity surface emitting lasers (VCSELs) to transparent AlGaAs and GaP substrates to fabricate bottom-emitting short wavelength VCSELs. As a baseline fabrication technology applicable to many semiconductor systems, wafer fusion will revolutionize the way we think about possible semiconductor devices, and enable novel device configurations not possible by epitaxial growth.

Choquette, K.D.; Geib, K.M.; Hou, H.Q.; Allerman, A.A.; Kravitz, S.; Follstaedt, D.M.; Hindi, J.J.

1999-05-01T23:59:59.000Z

250

Transmission Commercial Project Integration  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Improvement (CBPI) Customer Forum Energy Imbalance Market Generator Interconnection Reform Implementation Network Integration Transmission Service (NT Service) Network Open...

251

Advanced Integrated Systems Technology Development  

E-Print Network [OSTI]

conditioning in buildings featuring integrated design withconditioning in buildings featuring integrated design withof a building with advanced integrated design involving one

2013-01-01T23:59:59.000Z

252

SURFACE MODIFICATION OF ZIRCALOY-4 SUBSTRATES WITH NICKEL ZIRCONIUM INTERMETALLICS  

SciTech Connect (OSTI)

Surfaces of Zircaloy-4 (Zr-4) substrates were modified with nickel-zirconium (NiZr) intermetallics to tailor oxidation performance for specialized applications. Surface modification was achieved by electroplating Zr-4 substrates with nickel (Ni) and then performing thermal treatments to fully react the Ni plating with the substrates, which resulted in a coating of NiZr intermetallics on the substrate surfaces. Both plating thickness and thermal treatment were evaluated to determine the effects of these fabrication parameters on oxidation performance and to identify an optimal surface modification process. Isothermal oxidation tests were performed on surface-modified materials at 290°, 330°, and 370°C under a constant partial pressure of oxidant (i.e., 1 kPa D2O in dry Ar at 101 kPa) for 64 days. Test results revealed an enhanced, transient oxidation rate that decreased asymptotically toward the rate of the Zr-4 substrate. Oxidation kinetics were analyzed from isothermal weight gain data, which were correlated with microstructure, hydrogen pickup, strength, and hardness.

Luscher, Walter G.; Gilbert, Edgar R.; Pitman, Stan G.; Love, Edward F.

2013-02-01T23:59:59.000Z

253

Thin-film chip-to-substrate interconnect and methods for making same  

DOE Patents [OSTI]

Integrated circuit chips are electrically connected to a silica wafer interconnection substrate. Thin film wiring is fabricated down bevelled edges of the chips. A subtractive wire fabrication method uses a series of masks and etching steps to form wires in a metal layer. An additive method direct laser writes or deposits very thin metal lines which can then be plated up to form wires. A quasi-additive or subtractive/additive method forms a pattern of trenches to expose a metal surface which can nucleate subsequent electrolytic deposition of wires. Low inductance interconnections on a 25 micron pitch (1600 wires on a 1 cm square chip) can be produced. The thin film hybrid interconnect eliminates solder joints or welds, and minimizes the levels of metallization. Advantages include good electrical properties, very high wiring density, excellent backside contact, compactness, and high thermal and mechanical reliability.

Tuckerman, David B. (Livermore, CA)

1991-01-01T23:59:59.000Z

254

Thin-film chip-to-substrate interconnect and methods for making same  

DOE Patents [OSTI]

Integrated circuit chips are electrically connected to a silicon wafer interconnection substrate. Thin film wiring is fabricated down bevelled edges of the chips. A subtractive wire fabrication method uses a series of masks and etching steps to form wires in a metal layer. An additive method direct laser writes or deposits very thin lines which can then be plated up to form wires. A quasi-additive or subtractive/additive method forms a pattern of trenches to expose a metal surface which can nucleate subsequent electrolytic deposition of wires. Low inductance interconnections on a 25 micron pitch (1600 wires on a 1 cm square chip) can be produced. The thin film hybrid interconnect eliminates solder joints or welds, and minimizes the levels of metallization. Advantages include good electrical properties, very high wiring density, excellent backside contact, compactness, and high thermal and mechanical reliability. 6 figs.

Tuckerman, D.B.

1988-06-06T23:59:59.000Z

255

HFCVD of diamond at low substrate and low filament temperatures  

SciTech Connect (OSTI)

It has been discovered that the addition of a small amount of oxygen to the CH{sub 4} and H{sub 2} feed gas permits HFCVD of diamond at significantly lower filament and substrate temperatures. The effective O/C ratio here is much lower than that used in most studies of the oxygen effect. Careful control of the O/C and C/H ratios were found to be crucial to success. The effects of substrate and filament temperatures on growth rate and film quality were studied. Optimum conditions were found that gave reasonable growth rates ( {approximately}0.5 {mu}m/h ) with high film quality at filament temperatures below 1750{degrees}C and substrate temperatures below 600C. As a result, low temperature deposition has been realized. Power consumption can be reduced 50%, and the filament lifetime is extended indefinitely.

Tolt, Z.L.; Heatherly, L.; Clausing, R.E.; Shaw, R.W. [Oak Ridge National Lab., TN (United States); Feigerle, C.S. [Univ. of Tennessee, Knoxville, TN (United States). Dept. of Chemistry

1995-12-31T23:59:59.000Z

256

Ion implantation profile modeling of nitrocellulose coated substrates  

SciTech Connect (OSTI)

The modification of a standard ion implantation profile is usually achieved by carrying out successive irradiations at variable ion incident energy. Keeping this latter parameter constant, we propose an alternative way which consists in implanting the substrate through a nitrocellulose thin film shrinking during ion irradiation. Making precise use of the self-developing mechanism of nitrocellulose when functioning as an ion beam resist, we describe a simple model predicting the new implantation profile and, in particular, the concentration enhancement obtained at the surface of the substrate. The model whose fundamentals and related mathematical derivations are given, is critically dependent on the diffusion mechanism of the implanted ions in the substrate. Comparison between simulated and preliminary experimental implantation profiles of Cs in polyparaphenylenesulfide is made and does not show a major divergence considering that the only diffusion mechanism taken into account is the thermal diffusion.

Merhari, L.; Le Huee, C.; Belorgeot, C.; Bahna, Z. (University of Limoges, Laboratoire d'Electronique des Polymeres sous Faisceaux Ioniques, 123, avenue Albert Thomas 87060 Limoges (France))

1991-11-25T23:59:59.000Z

257

System and method for floating-substrate passive voltage contrast  

DOE Patents [OSTI]

A passive voltage contrast (PVC) system and method are disclosed for analyzing ICs to locate defects and failure mechanisms. During analysis a device side of a semiconductor die containing the IC is maintained in an electrically-floating condition without any ground electrical connection while a charged particle beam is scanned over the device side. Secondary particle emission from the device side of the IC is detected to form an image of device features, including electrical vias connected to transistor gates or to other structures in the IC. A difference in image contrast allows the defects or failure mechanisms be pinpointed. Varying the scan rate can, in some instances, produce an image reversal to facilitate precisely locating the defects or failure mechanisms in the IC. The system and method are useful for failure analysis of ICs formed on substrates (e.g. bulk semiconductor substrates and SOI substrates) and other types of structures.

Jenkins, Mark W. (Albuquerque, NM); Cole, Jr., Edward I. (Albuquerque, NM); Tangyunyong, Paiboon (Albuquerque, NM); Soden, Jerry M. (Placitas, NM); Walraven, Jeremy A. (Albuquerque, NM); Pimentel, Alejandro A. (Albuquerque, NM)

2009-04-28T23:59:59.000Z

258

Process for forming a metal compound coating on a substrate  

DOE Patents [OSTI]

A method of coating a substrate with a thin layer of a metal compound by forming a dispersion of an electrophoretically active organic colloid and a precursor of the metal compound in an electrolytic cell in which the substrate is an electrode. Upon application of an electric potential, the electrode is coated with a mixture of the organic colloid and the precursor to the metal compound, and the coated substrate is then heated in the presence of an atmosphere or vacuum to decompose the organic colloid and form a coating of either a combination of metal compound and carbon, or optionally forming a porous metal compound coating by heating to a temperature high enough to chemically react the carbon.

Sharp, Donald J. (Albuquerque, NM); Vernon, Milton E. (Albuquerque, NM); Wright, Steven A. (Albuquerque, NM)

1991-01-01T23:59:59.000Z

259

Process for forming a metal compound coating on a substrate  

DOE Patents [OSTI]

A method of coating a substrate with a thin layer of a metal compound by forming a dispersion of an electrophoretically active organic colloid and a precursor of the metal compound in an electrolytic cell in which the substrate is an electrode. Upon application of an electric potential, the electrode is coated with a mixture of the organic colloid and the precursor to the metal compound, and the coated substrate is then heated in the presence of an atmosphere or vacuum to decompose the organic colloid and form a coating of either a combination of metal compound and carbon, or optionally forming a porous metal compound coating by heating to a temperature high enough to chemically react the carbon.

Sharp, D.J.; Vernon, M.E.; Wright, S.A.

1988-06-29T23:59:59.000Z

260

Electrodeposition of biaxially textured layers on a substrate  

DOE Patents [OSTI]

Methods of producing one or more biaxially textured layer on a substrate, and articles produced by the methods, are disclosed. An exemplary method may comprise electrodepositing on the substrate a precursor material selected from the group consisting of rare earths, transition metals, actinide, lanthanides, and oxides thereof. An exemplary article (150) may comprise a biaxially textured base material (130), and at least one biaxially textured layer (110) selected from the group consisting of rare earths, transition metals, actinides, lanthanides, and oxides thereof. The at least one biaxially textured layer (110) is formed by electrodeposition on the biaxially textured base material (130).

Bhattacharya, Raghu N; Phok, Sovannary; Spagnol, Priscila; Chaudhuri, Tapas

2013-11-19T23:59:59.000Z

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Conductive and robust nitride buffer layers on biaxially textured substrates  

DOE Patents [OSTI]

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

2009-03-31T23:59:59.000Z

262

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon CoolingSubstrateSubstrate-Induced Band-Gap

263

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon CoolingSubstrateSubstrate-Induced

264

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, VOL. , NO. , 2012 1 Dynamic Driver Supply Voltage Scaling for Organic  

E-Print Network [OSTI]

Dynamic Driver Supply Voltage Scaling for Organic Light Emitting Diode Displays Donghwa Shin, Student, Fellow, IEEE Abstract--Organic light emitting diode (OLED) display is a self-illuminating device]. On the other hand, an organic light emitting diode (OLED) is self-illuminating using organic light emission

Pedram, Massoud

265

Algal Integrated Biorefineries  

Broader source: Energy.gov [DOE]

The Algae Program works closely with the Demonstration and Deployment Program on projects that can validate advancements toward commercialization at increasing scales. Integrated biorefineries...

266

Technology Integration Overview  

Broader source: Energy.gov (indexed) [DOE]

Technology Integration Overview Dennis A. Smith - Clean Cities Deployment Connie Bezanson - Vehicle Education June 17, 2014 VEHICLE TECHNOLOGIES OFFICE This presentation does not...

267

Technology Integration Overview  

Broader source: Energy.gov (indexed) [DOE]

-Technology Integration Overview - Dennis A. Smith Connie Bezanson U. S. Department of Energy Headquarters Office - Washington, D.C. May 2013 Project ID: TI000 2013 Department of...

268

Integrated Technology Deployment  

Office of Energy Efficiency and Renewable Energy (EERE)

Integrated technology deployment is a comprehensive approach to implementing solutions that increase the use of energy efficiency and renewable energy technologies. Federal, state, and local...

269

Lithium Diisopropylamide Solvated by Hexamethylphosphoramide: Substrate-Dependent  

E-Print Network [OSTI]

Lithium Diisopropylamide Solvated by Hexamethylphosphoramide: Substrate-Dependent Mechanisms-1301 Received February 9, 2006; E-mail: dbc6@cornell.edu Abstract: Lithium diisopropylamide of lithium-ion solvation at a molecular level of resolution.5 Our interest in HMPA stems from studies

Collum, David B.

270

The Properties of Conducting Polymers and Substrates for Printed Electronics  

E-Print Network [OSTI]

* , Laura K. Wood*, Jan Pekarovic* , Alexandra Pekarovicova* , Paul D. Fleming* , and Valery Bliznyuk films as well as pressed pellets. Electrical properties of silver inks on different paper substrates are beginning to turn toward electronic printed RFID tags on label papers. To reduce production costs

Fleming, Paul D. "Dan"

271

Substrate specificity of Arabidopsis 3-ketoacyl-CoA synthases  

SciTech Connect (OSTI)

The very long chain fatty acids (VLCFA) incorporated into plant lipids are derived from the iterative addition of C2 units provided by malonyl-CoA to an acyl-CoA by the 3-ketoacyl-CoA synthase (KCS) component of a fatty acid elongase (FAE) complex. Mining of the Arabidopsis genome sequence database revealed 20 genes with homology to seed-specific FAE1 KCS. Eight of the 20 putative KCSs were cloned, expressed in yeast, and isolated as (His){sub 6} fusion proteins. Five of the eight (At1g71160, At1g19440, At1g07720, At5g04530, and At4g34250) had little or no activity with C16 to C20 substrates while three demonstrated activity with C16, C18, and C20 saturated acyl-CoA substrates. At1g01120 KCS (KCS1) and At2g26640 KCS had broad substrate specificities when assayed with saturated and mono-unsaturated C16 to C24 acyl-CoAs while At4g34510 KCS was specific for saturated fatty acyl-CoA substrates.

Blacklock, Brenda J. [Department of Chemistry and Chemical Biology, Purdue School of Science, Indiana University-Purdue University Indianapolis (IUPUI), Indianapolis, IN 46202 (United States)]. E-mail: blacklock@chem.iupui.edu; Jaworski, Jan G. [Donald Danforth Plant Science Center, 975 North Warson Road, St. Louis, MO 63132 (United States)

2006-07-28T23:59:59.000Z

272

Flexible Electronics New Devices on Nearly Any Type of Substrate  

E-Print Network [OSTI]

Flexible Electronics ­ New Devices on Nearly Any Type of Substrate by Angelika Boeer published: 2011-07-06 Flexible electronic devices ­ this is a fascinating topic and becoming more and more such as display systems, flexible and stretchable electronics, or other, no-waver-based devices. Sign up

Rogers, John A.

273

TIF film, substrates and nonfumigant soil disinfestation maintain fruit yields  

E-Print Network [OSTI]

Monterey Bay Academy Coir Peat and perlite 9.63b* 10.46aBerry Coir 9.61bc 1.21bc Peat and perlite 9.86ab 1.26abtraditionally used coir, peat or other soilless substrates

2013-01-01T23:59:59.000Z

274

Strong, non-magnetic, cube textured alloy substrates  

DOE Patents [OSTI]

A warm-rolled, annealed, polycrystalline, cube-textured, {100}<100>, FCC-based alloy substrate is characterized by a yield strength greater than 200 MPa and a biaxial texture characterized by a FWHM of less than 15.degree. in all directions.

Goyal, Amit (Knoxville, TN)

2011-02-01T23:59:59.000Z

275

Growth of Germanium Nanowires on a Flexible Organic Substrate  

E-Print Network [OSTI]

2000; Wu and Yang 2000; Hanrath and Korgel 2002; Hanrath and Korgel 2004) (Greytak 2004) The small size-efficient substrate for potential applications such as those of photovoltaics or display technologies, due in large be manufactured to enable the extension of our methods to other nanowire/nanotube growth systems such as silicon

Garfunkel, Eric

276

Graphene growth directly on functional substrate , L. Baratona  

E-Print Network [OSTI]

Graphene growth directly on functional substrate C. S. Leea , L. Baratona , Z. B. Hea , J E-mail address: laurent.baraton@polytechnique.edu. Abstract Graphene is perhaps the most promising of the awaited graphene film formed at the surface of catalyst layer, we observed the formation of a second

Paris-Sud XI, Université de

277

Aerosol-Jet-Printed, 1 Volt HBridge Drive Circuit on Plastic with Integrated Electrochromic Pixel  

E-Print Network [OSTI]

Aerosol-Jet-Printed, 1 Volt HBridge Drive Circuit on Plastic with Integrated Electrochromic Pixel electrochromic (EC) pixel as large as 4 mm2 that is printed on the same substrate. All of the key components, flexible electronics, electrochromic pixel, transistor, capacitor, ion gel 1. INTRODUCTION Printing

Kim, Chris H.

278

Ultrabright fluorescent OLEDS using triplet sinks  

DOE Patents [OSTI]

A first device is provided. The first device further comprises an organic light emitting device. The organic light emitting device further comprises an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer further comprises an organic host compound, an organic emitting compound capable of fluorescent emission at room temperature, and an organic dopant compound. The triplet energy of the dopant compound is lower than the triplet energy of the host compound. The dopant compound does not strongly absorb the fluorescent emission of the emitting compound.

Zhang, Yifan; Forrest, Stephen R; Thompson, Mark

2013-06-04T23:59:59.000Z

279

Problems and Opportunities in OLED Lighting Manufacturing  

Energy Savers [EERE]

NY. * Our first product was introduced last year - an amber marker light for the health care market. * We have will soon complete our commercialization of a competitive...

280

OLED Testing Opportunity | Department of Energy  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of EnergyEnergyENERGY TAXBalanced ScorecardReactor TechnologyOFFICE: NEPA REVIEWS: No NEPAAnnualR&D

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

OLED Stakeholder Meeting Report | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Year in3.pdfEnergyDepartment of Energy(National RenewableNovember09

282

OLED Deposition Technology - Energy Innovation Portal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the ContributionsArms Control R&DNuclear fuel recyclingArchive DownloadOJT!OLCF

283

Systems Integration (Fact Sheet)  

SciTech Connect (OSTI)

The Systems Integration (SI) subprogram works closely with industry, universities, and the national laboratories to overcome technical barriers to the large-scale deployment of solar technologies. To support these goals, the subprogram invests primarily in four areas: grid integration, technology validation, solar resource assessment, and balance of system development.

Not Available

2011-10-01T23:59:59.000Z

284

Water Waves and Integrability  

E-Print Network [OSTI]

The Euler's equations describe the motion of inviscid fluid. In the case of shallow water, when a perturbative asymtotic expansion of the Euler's equations is taken (to a certain order of smallness of the scale parameters), relations to certain integrable equations emerge. Some recent results concerning the use of integrable equation in modeling the motion of shallow water waves are reviewed in this contribution.

Rossen I. Ivanov

2007-07-12T23:59:59.000Z

285

Modular Integrated Energy Systems  

E-Print Network [OSTI]

Honeywell #12;Modular Integrated Energy Systems Task 5 Prototype Development Reference Design DocumentationModular Integrated Energy Systems Prepared for: Oak Ridge National Laboratory P.O. Box 2008 Building 3147 Oak Ridge, TN 37831 April 27, 2006 Prepared by: Honeywell Laboratories 3660 Technology Drive

Oak Ridge National Laboratory

286

Method for integrating microelectromechanical devices with electronic circuitry  

DOE Patents [OSTI]

A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry on a common substrate. The MEM device can be fabricated within a substrate cavity and encapsulated with a sacrificial material. This allows the MEM device to be annealed and the substrate planarized prior to forming electronic circuitry on the substrate using a series of standard processing steps. After fabrication of the electronic circuitry, the electronic circuitry can be protected by a two-ply protection layer of titanium nitride (TiN) and tungsten (W) during an etch release process whereby the MEM device is released for operation by etching away a portion of a sacrificial material (e.g. silicon dioxide or a silicate glass) that encapsulates the MEM device. The etch release process is preferably performed using a mixture of hydrofluoric acid (HF) and hydrochloric acid (HCI) which reduces the time for releasing the MEM device compared to use of a buffered oxide etchant. After release of the MEM device, the TiN:W protection layer can be removed with a peroxide-based etchant without damaging the electronic circuitry.

Barron, Carole C. (Austin, TX); Fleming, James G. (Albuquerque, NM); Montague, Stephen (Albuquerque, NM)

1999-01-01T23:59:59.000Z

287

Integrated resonant micro-optical gyroscope and method of fabrication  

DOE Patents [OSTI]

An integrated optic gyroscope is disclosed which is based on a photonic integrated circuit (PIC) having a bidirectional laser source, a pair of optical waveguide phase modulators and a pair of waveguide photodetectors. The PIC can be connected to a passive ring resonator formed either as a coil of optical fiber or as a coiled optical waveguide. The lasing output from each end of the bidirectional laser source is phase modulated and directed around the passive ring resonator in two counterpropagating directions, with a portion of the lasing output then being detected to determine a rotation rate for the integrated optical gyroscope. The coiled optical waveguide can be formed on a silicon, glass or quartz substrate with a silicon nitride core and a silica cladding, while the PIC includes a plurality of III V compound semiconductor layers including one or more quantum well layers which are disordered in the phase modulators and to form passive optical waveguides.

Vawter, G. Allen (Albuquerque, NM); Zubrzycki, Walter J. (Sandia Park, NM); Guo, Junpeng (Albuquerque, NM); Sullivan, Charles T. (Albuquerque, NM)

2006-09-12T23:59:59.000Z

288

PEV Integration with Renewables (Presentation)  

SciTech Connect (OSTI)

This presentation discusses current research at NREL on integrating plug-in electric vehicles with the grid and using renewable energy to charge the grid. The Electric Vehicle Grid Integration (EVGI) and Integrated Network Testbed for Energy Grid Research and Technology Experimentation (INTEGRATE) are addressing the opportunities and technical requirements for vehicle grid integration that will increase marketability and lead to greater petroleum reduction.

Markel, T.

2014-06-18T23:59:59.000Z

289

Integrated Energy Efficiency  

E-Print Network [OSTI]

10 Off The Grid Sensor Integration Natural Daylight Base and Peak Energy Reduction 11 Lowest Cost Renewable Solar Integrated Lighting $1.0 million/MW $6 – 9 million/MW Wind $1.3 - 1.9 million/MW Biomass $1.5 – 2.5 million/MW Geothermal $1.6 million...Integrated Energy Efficiency Steve Heins VP Communications and Government Affairs Orion Energy Systems, Inc. 2 MegaTrend Convergence We need companies to commercialize technologies that use less energy without compromise to operations. Energy...

Heins, S.

290

Method of forming biaxially textured alloy substrates and devices thereon  

DOE Patents [OSTI]

Specific alloys, in particular Ni-based alloys, that can be biaxially textured, with a well-developed, single component texture are disclosed. These alloys have a significantly reduced Curie point, which is very desirable from the point of view of superconductivity applications. The biaxially textured alloy substrates also possess greatly enhanced mechanical properties (yield strength, ultimate tensile strength) which are essential for most applications, in particular, superconductors. A method is disclosed for producing complex multicomponent alloys which have the ideal physical properties for specific applications, such as lattice parameter, degree of magnetism and mechanical strength, and which cannot be fabricated in textured form. In addition, a method for making ultra thin biaxially textured substrates with complex compositions is disclosed.

Goyal, Amit (Knoxville, TN); Specht, Eliot D. (Knoxville, TN); Kroeger, Donald M. (Knoxville, TN); Paranthaman, Mariappan (Knoxville, TN)

1999-01-01T23:59:59.000Z

291

Method of forming biaxially textured alloy substrates and devices thereon  

DOE Patents [OSTI]

Specific alloys, in particular Ni-based alloys, that can be biaxially textured, with a well-developed, single component texture are disclosed. These alloys have a significantly reduced Curie point, which is very desirable from the point of view of superconductivity applications. The biaxially textured alloy substrates also possess greatly enhanced mechanical properties (yield strength, ultimate tensile strength) which are essential for most applications, in particular, superconductors. A method is disclosed for producing complex multicomponent alloys which have the ideal physical properties for specific applications, such as lattice parameter, degree of magnetism and mechanical strength, and which cannot be in textured form. In addition, a method for making ultra thin biaxially textured substrates with complex compositions is disclosed.

Goyal, Amit (300 Walker Springs Rd., #19E, Knoxville, TN 37923); Specht, Eliot D. (10639 Rivermist La., Knoxville, TN 37922); Kroeger, Donald M. (716 Villa Crest Dr., Knoxville, TN 37923); Paranthaman, Mariappan (1117 Oak Haven Rd., Knoxville, TN 37923)

2000-01-01T23:59:59.000Z

292

Process for fabricating ribbed electrode substrates and other articles  

DOE Patents [OSTI]

A process for fabricating a resin bonded carbon fiber article, and in particular electrochemical cell electrode substrates and the like requiring different mean pore sizes in different areas, involves simultaneously heating and compacting different mixtures of carbon fibers and resin in different areas of an article forming mold, wherein the carbon fibers in each of the different mixtures have different, known bulk densities. The different bulk densities of the carbon fibers in the mixtures are chosen to yield the desired mean pore sizes and other properties in the article after heating and compacting the mixtures. Preferably, the different bulk densities are obtained using different carbon fiber lengths in the molding mixtures. The process is well suited to forming ribbed electrode substrates with preselected optimum mean pore sizes, porosities, and densities in the ribs, the webs connecting the ribs, and in the edge seals.

Goller, Glen J. (West Springfield, MA); Breault, Richard D. (Coventry, CT); Smith, J. Harold (Amherst, MA)

1984-01-01T23:59:59.000Z

293

Method for forming silicon on a glass substrate  

DOE Patents [OSTI]

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.

McCarthy, Anthony M. (Menlo Park, CA)

1995-01-01T23:59:59.000Z

294

The effects of the substrate surface roughness on graphene plasmons  

SciTech Connect (OSTI)

We investigate the effects of variation in the gap size between mono-layer graphene and a substrate with a randomly rough surface on the linear response of graphene’s ? electron bands within the approximation of Dirac fermions. We adopt the electrostatic Green’s function developed by Rahman and Maradudin [Phys. Rev. B 21, 2137–2143 (1980)] for the surface of a dielectric medium, which exhibits a Gaussian distributed height profile and combine it with the polarization function of graphene described as a zero-thickness planar layer at a fixed distance from the mean position of the substrate surface. We specifically consider the effects of a random gap size on the two-dimensional sheet plasmon mode in heavily doped graphene, both on its dispersion relation in the long-wavelength limit and its broadening due to Landau damping in the continuum of inter-band electron-hole excitations at shorter wavelengths.

Lyon, Keenan A.; Miskovic, Zoran L. [Department of Applied Mathematics, University of Waterloo, 200 University Ave W, N2L 3G1, Waterloo, Ontario (Canada)

2014-03-31T23:59:59.000Z

295

Graphdiyne as a Promising Substrate for Stabilizing Pt Nanoparticle Catalyst  

E-Print Network [OSTI]

At present, Pt nanoparticle catalysts in fuel cells suffer from aggregation and loss of chemical activity. In this work, graphdiyne, which has natural porous structure, was proposed as substrate with high adsorption ability to stabilize Pt nanoparticles. Using multiscale calculations by ab initio method and the ReaxFF potential, geometry optimizations, molecular dynamics simulations, Metropolis Monte Carlo simulations and minimum energy paths calculations were performed to investigate the adsorption energy and the rates of desorption and migration of Pt nanoparticles on graphdiyne and graphene. According to the comparison between graphdiyne and graphene, it was found that the high adsorption ability of graphdiyne can avoid Pt nanoparticle migration and aggregation on substrate. Then, simulations indicated the potential catalytic ability of graphdiyne-Pt-nanoparticle system to the oxygen reduction reaction in fuel cells. In summary, graphdiyne should be an excellent material to replace graphite or amorphous ca...

Lin, Zheng-Zhe

2015-01-01T23:59:59.000Z

296

Monolithic amorphous silicon modules on continuous polymer substrate  

SciTech Connect (OSTI)

This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

Grimmer, D.P. (Iowa Thin Film Technologies, Inc., Ames, IA (United States))

1992-03-01T23:59:59.000Z

297

Low Voltage Reversible Electrowetting Exploiting Lubricated Polymer Honeycomb Substrates  

E-Print Network [OSTI]

Low-voltage electrowetting-on-dielectric scheme realized with lubricated honeycomb polymer surfaces is reported. Polycarbonate honeycomb reliefs manufactured with the breath-figures self-assembly were impregnated with silicone and castor oils. The onset of the reversible electrowetting for silicone oil impregnated substrates occurred at 35 V, whereas for castor oil impregnated ones it took place at 80 V. The semi-quantitative analysis of electrowetting of impregnated surfaces is proposed.

Edward Bormashenko; Roman Pogreb; Yelena Bormashenko; Roman Grynyov; Oleg Gendelman

2014-06-16T23:59:59.000Z

298

SCANNING ACOUSTIC MICROSCOPY MODELING FOR MICROMECHANICAL MEASUREMENTS OF COMPLEX SUBSTRATES  

E-Print Network [OSTI]

function of the substrate-fluid interface form the two key problems of effective SAM modeling. In the SAM modeling literature, a variety of approaches have been proposed for evaluating Eq 2.1. The approaches most frequently adopted are founded either... 1973). As seen from Eq 2.1, the evaluation of the reflected pressure field requires the computation of the angular spectrum and reflectance function. In general, these quantities can be computed independently. For angular spectrum calculation we...

Marangos, Orestes

2010-05-31T23:59:59.000Z

299

Substrate dielectric effects on graphene field effect transistors  

SciTech Connect (OSTI)

Graphene is emerging as a promising material for future electronics and optoelectronics applications due to its unique electronic structure. Understanding the graphene-dielectric interaction is of vital importance for the development of graphene field effect transistors (FETs) and other novel graphene devices. Here, we extend the exploration of substrate dielectrics from conventionally used thermally grown SiO{sub 2} and hexagonal boron nitride films to technologically relevant deposited dielectrics used in semiconductor industry. A systematic analysis of morphology and optical and electrical properties was performed to study the effects of different substrates (SiO{sub 2}, HfO{sub 2}, Al{sub 2}O{sub 3}, tetraethyl orthosilicate (TEOS)-oxide, and Si{sub 3}N{sub 4}) on the carrier transport of chemical vapor deposition-derived graphene FET devices. As baseline, we use graphene FETs fabricated on thermal SiO{sub 2} with a relatively high carrier mobility of 10?000 cm{sup 2}/(V s). Among the deposited dielectrics studied, silicon nitride showed the highest mobility, comparable to the properties of graphene fabricated on thermal SiO{sub 2}. We conclude that this result comes from lower long range scattering and short range scattering rates in the nitride compared those in the other deposited films. The carrier fluctuation caused by substrates, however, seems to be the main contributing factor for mobility degradation, as a universal mobility-disorder density product is observed for all the dielectrics examined. The extrinsic doping trend is further confirmed by Raman spectra. We also provide, for the first time, correlation between the intensity ratio of G peak and 2D peak in the Raman spectra to the carrier mobility of graphene for different substrates.

Hu, Zhaoying; Prasad Sinha, Dhiraj; Ung Lee, Ji, E-mail: jlee1@albany.edu; Liehr, Michael [College of Nanoscale Science and Engineering, The State University of New York at Albany, Albany, New York 12203 (United States)

2014-05-21T23:59:59.000Z

300

Direct-Cooled Power Electronic Substrate | Department of Energy  

Energy Savers [EERE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector General Office of Audit Services AuditTransatlanticDirect-Cooled Power Electronic Substrate

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon CoolingSubstrate

302

Structural basis of substrate discrimination and integrin binding by autotaxin  

SciTech Connect (OSTI)

Autotaxin (ATX, also known as ectonucleotide pyrophosphatase/phosphodiesterase-2, ENPP2) is a secreted lysophospholipase D that generates the lipid mediator lysophosphatidic acid (LPA), a mitogen and chemoattractant for many cell types. ATX-LPA signaling is involved in various pathologies including tumor progression and inflammation. However, the molecular basis of substrate recognition and catalysis by ATX and the mechanism by which it interacts with target cells are unclear. Here, we present the crystal structure of ATX, alone and in complex with a small-molecule inhibitor. We have identified a hydrophobic lipid-binding pocket and mapped key residues for catalysis and selection between nucleotide and phospholipid substrates. We have shown that ATX interacts with cell-surface integrins through its N-terminal somatomedin B-like domains, using an atypical mechanism. Our results define determinants of substrate discrimination by the ENPP family, suggest how ATX promotes localized LPA signaling and suggest new approaches for targeting ATX with small-molecule therapeutic agents.

Hausmann, Jens; Kamtekar, Satwik; Christodoulou, Evangelos; Day, Jacqueline E.; Wu, Tao; Fulkerson, Zachary; Albers, Harald M.H.G.; van Meeteren, Laurens A.; Houben, Anna J.S.; van Zeijl, Leonie; Jansen, Silvia; Andries, Maria; Hall, Troii; Pegg, Lyle E.; Benson, Timothy E.; Kasiem, Mobien; Harlos, Karl; Vander Kooi, Craig W.; Smyth, Susan S.; Ovaa, Huib; Bollen, Mathieu; Morris, Andrew J.; Moolenaar, Wouter H.; Perrakis, Anastassis (Pfizer); (Leuven); (Oxford); (NCI-Netherlands); (Kentucky)

2013-09-25T23:59:59.000Z

303

Wellbore Integrity Network  

SciTech Connect (OSTI)

In this presentation, we review the current state of knowledge on wellbore integrity as developed in the IEA Greenhouse Gas Programme's Wellbore Integrity Network. Wells are one of the primary risks to the successful implementation of CO{sub 2} storage programs. Experimental studies show that wellbore materials react with CO{sub 2} (carbonation of cement and corrosion of steel) but the impact on zonal isolation is unclear. Field studies of wells in CO{sub 2}-bearing fields show that CO{sub 2} does migrate external to casing. However, rates and amounts of CO{sub 2} have not been quantified. At the decade time scale, wellbore integrity is driven by construction quality and geomechanical processes. Over longer time-scales (> 100 years), chemical processes (cement degradation and corrosion) become more important, but competing geomechanical processes may preserve wellbore integrity.

Carey, James W. [Los Alamos National Laboratory; Bachu, Stefan [Alberta Innovates

2012-06-21T23:59:59.000Z

304

SOLAR PROGRAM: SYSTEMS INTEGRATION  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2010 2. Current Request for Information (RFI) 3. Questions 4 | Systems Integration eere.energy.gov Summary of 1W Workshop Date: August 11th and 12th, 2010 Attendees: 86 total;...

305

IDC Integrated Master Plan.  

SciTech Connect (OSTI)

This is the IDC Re-Engineering Phase 2 project Integrated Master Plan (IMP). The IMP presents the major accomplishments planned over time to re-engineer the IDC system. The IMP and the associate Integrated Master Schedule (IMS) are used for planning, scheduling, executing, and tracking the project technical work efforts. REVISIONS Version Date Author/Team Revision Description Authorized by V1.0 12/2014 IDC Re- engineering Project Team Initial delivery M. Harris

Clifford, David J.; Harris, James M.

2014-12-01T23:59:59.000Z

306

Substrate Atomic-Termination-Induced Anisotropic Growth of ZnO Nanowires/Nanorods by the VLS Process  

E-Print Network [OSTI]

Substrate Atomic-Termination-Induced Anisotropic Growth of ZnO Nanowires/Nanorods by the VLSO substrate, we demonstrate the effect of substrate surface termination on nanowire growth. Symmetric) substrates have asymmetrically grown nanostructures. For the Zn-terminated (0001) substrate surface, uniform

Wang, Zhong L.

307

E-Print Network 3.0 - alternate energy substrates Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

energy and bulk cohesive energy than the substrate, layer-by-layer or Stranski... and bulk cohesive energy of the film is large compared to the substrate. We also find the film...

308

Surface-Enhanced Raman Scattering Study on Graphene-Coated Metallic Nanostructure Substrates  

E-Print Network [OSTI]

#12;Surface-Enhanced Raman Scattering Study on Graphene-Coated Metallic Nanostructure Substrates University, University Park, Pennsylvania 16802, United States *S Supporting Information ABSTRACT: Graphene, we combine graphene with conventional metallic surface- enhanced Raman scattering (SERS) substrates

309

Apparatus and method for rapid cooling of large area substrates in vacuum  

DOE Patents [OSTI]

The present invention is directed to an apparatus and method for rapid cooling of a large substrate in a vacuum environment. A first cooled plate is brought into close proximity with one surface of a flat substrate. The spatial volume between the first cooling plate and the substrate is sealed and brought to a higher pressure than the surrounding vacuum level to increase the cooling efficiency. A second cooled plate is brought into close proximity with the opposite surface of the flat substrate. A second spatial volume between the second cooling plate and the substrate is sealed and the gas pressure is equalized to the gas pressure in the first spatial volume. The equalization of the gas pressure on both sides of the flat substrate eliminates deflection of the substrate and bending stress in the substrate.

Barth, Kurt L.; Enzenroth, Robert A.; Sampath, Walajabad S.

2012-11-06T23:59:59.000Z

310

Commercialization potential of compositionally graded Ge - Si??x?Gex? - Si substrates for solar applications  

E-Print Network [OSTI]

This project considers the potential of Ge - Si??x?Gex? - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge ...

Goh, Johnathan Jian Ming

2006-01-01T23:59:59.000Z

311

E-Print Network 3.0 - aluminum alloy substrates Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Sample search results for: aluminum alloy substrates Page: << < 1 2 3 4 5 > >> 1 CORROSION ENGINEERING SECTION CORROSION--Vol. 60, No. 5 501 Summary: adjacent to the substrate...

312

Apparatus and method for rapid cooling of large area substrates in vacuum  

DOE Patents [OSTI]

The present invention is directed to an apparatus and method for rapid cooling of a large substrate in a vacuum environment. A first cooled plate is brought into close proximity with one surface of a flat substrate. The spatial volume between the first cooling plate and the substrate is sealed and brought to a higher pressure than the surrounding vacuum level to increase the cooling efficiency. A second cooled plate is brought into close proximity with the opposite surface of the flat substrate. A second spatial volume between the second cooling plate and the substrate is sealed and the gas pressure is equalized to the gas pressure in the first spatial volume. The equalization of the gas pressure on both sides of the flat substrate eliminates deflection of the substrate and bending stress in the substrate.

Barth, Kurt L.; Enzenroth, Robert A.; Sampath, Walajabad S.

2010-09-28T23:59:59.000Z

313

Integrating farming and wastewater management.  

E-Print Network [OSTI]

??Source separating wastewater systems are often motivated by their integration with farming. It is thus important to scrutinise the critical factors associated with such integration.… (more)

Tidåker, Pernilla

2007-01-01T23:59:59.000Z

314

Systems Integration | Department of Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Systems Integration Systems Integration Through the SunShot Initiative, the U.S. Department of Energy (DOE) supports the development of innovative, cost-effective solutions that...

315

Systems Integration | ornl.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Systems Integration SHARE Systems Integration The Distributed Energy Communications and Controls (DECC) Laboratory offers a unique test bed for testing distributed energy...

316

Transportation and Stationary Power Integration: Workshop Proceedings...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Integration: Workshop Proceedings Transportation and Stationary Power Integration: Workshop Proceedings Proceedings for the Transportation and Stationary Power Integration Workshop...

317

Full-wave analysis of large conductor systems over substrate  

E-Print Network [OSTI]

Designers of high-performance integrated circuits are paying ever-increasing attention to minimizing problems associated with interconnects such as noise, signal delay, crosstalk, etc., many of which are caused by the ...

Hu, Xin, 1979-

2006-01-01T23:59:59.000Z

318

Integrating the Integrators - A Roadmap to Success  

SciTech Connect (OSTI)

The U.S. Department of Energy Environmental Management's (DOE-EM) investments in science and technology, as well as science and technology investments associated with other parts of the DOE are aimed at meeting the Departments cleanup goals. These investments, primarily focused on EM's cleanup mission, comprise the Environmental Quality Research and Development (R&D) portfolios. Synchronizing EM's Cleanup Project Managers (operations facility and process owners throughout the DOE complex) operational needs with EM R&D including the extensive work of the six Focus Areas (major thrust areas within DOE-EM) has been a continuing challenge. This recent initiative to better integrate the R&D program is in response to evolving needs within the Department to apply proven system engineering methods to clarify requirements and define EM's process to effectively orchestrate their R&D Program. To optimize this partnership, DOE-EM's Integration Program is successfully unifying the operational needs with the R&D as described in this paper.

Olson, Craig Stott; Conner, Craig C

1999-03-01T23:59:59.000Z

319

Integrating the Integrators - A Roadmap to Success  

SciTech Connect (OSTI)

The U.S. Department of Energy Environmental Management's (DOE-EM) investments in science and technology, as well as science and technology investments associated with other parts of the DOE are aimed at meeting the Departments cleanup goals. These investments, primarily focused on EM's cleanup mission, comprise the Environmental Quality Research and Development (R&D) portfolios. Synchronizing EM's Cleanup Project Managers (operations facility and process owners throughout the DOE complex) operational needs with EM R&D including the extensive work of the six Focus Areas (major thrust areas within DOE-EM) has been a continuing challenge. This recent initiative to better integrate the R&D program is in response to evolving needs within the Department to apply proven systems engineering methods to clarify requirements and define EM's process to effectively orchestrate their R&D Program. To optimize this partnership, DOE-EM's Integration Program is successfully unifying the operational needs with the R&D as described in this paper.

C. Conner; C. Olson

1999-02-01T23:59:59.000Z

320

THE RATCHETING OF COMPRESSED THERMALLY GROWN THIN FILMS ON DUCTILE SUBSTRATES  

E-Print Network [OSTI]

THE RATCHETING OF COMPRESSED THERMALLY GROWN THIN FILMS ON DUCTILE SUBSTRATES M. Y. HE1 , A. G by oxidation of the substrate. It is shown that, in some circumstances, ratcheting occurs, wherein which ratcheting does not occur. This critical size is related to the expansion mis®t, the substrate

Hutchinson, John W.

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Complex hydraulic and substrate variables limit freshwater mussel species richness and abundance  

E-Print Network [OSTI]

Complex hydraulic and substrate variables limit freshwater mussel species richness and abundance. We examined how substrate and complex hydraulic variables limit the distribution of freshwater mussels. We sampled mussels and measured substrate and hydraulic variables (at low and high flows) at 6

Vaughn, Caryn

322

Reduced thermal resistance of the silicon-synthetic diamond composite substrates at elevated temperatures  

E-Print Network [OSTI]

/Si sub- strates, depends on the polycrystalline-diamond grain size, diamond layer thicknessReduced thermal resistance of the silicon-synthetic diamond composite substrates at elevated of synthetic diamond-silicon composite substrates. Although composite substrates are more thermally resistive

323

Sintered molybdenum for a metallized ceramic substrate packaging for the wide-  

E-Print Network [OSTI]

of thermal expansion (CTE) matching that of SiC are needed. A metallized ceramic substrate based on aluminium the metal layer) and thermal conductivity (of the metal and ceramic layers). The most substrate usedSintered molybdenum for a metallized ceramic substrate packaging for the wide- bandgap devices

Boyer, Edmond

324

Apparatus and method for selective area deposition of thin films on electrically biased substrates  

DOE Patents [OSTI]

An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repells the ionized particles.

Zuhr, Raymond A. (Oak Ridge, TN); Haynes, Tony E. (Knoxville, TN); Golanski, Andrzej (Le Cheylas, FR)

1999-01-01T23:59:59.000Z

325

Particle/substrate interaction in the cold-spray bonding process  

E-Print Network [OSTI]

, atomic inter-diffusion is not expected to play a significant role in particle/substrate bonding. This canC2 148 9 Particle/substrate interaction in the cold-spray bonding process M. GRUJICIC, Clemson in this chapter to the problem of particle/substrate interactions and bonding during cold spray. The actual

Grujicic, Mica

326

Apparatus and method for selective area deposition of thin films on electrically biased substrates  

DOE Patents [OSTI]

An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repels the ionized particles. 3 figs.

Zuhr, R.A.; Haynes, T.E.; Golanski, A.

1999-06-08T23:59:59.000Z

327

Integrated Micro Nano Systems Integrated Micro Nano Systems  

E-Print Network [OSTI]

#12;Integrated Micro Nano Systems 2 #12;Integrated Micro Nano Systems 3 Val Jones (Ed.) Symposium on Integrated Micro Nano Systems: Convergence of bio and nanotechnologies, Enschede, The Netherlands, June 2006 Micro Nano Systems 4 #12;Integrated Micro Nano Systems 5 Preface In order to explore the convergence

Al Hanbali, Ahmad

328

Quantitative adhesion data for electroless nickel deposited on various substrates  

SciTech Connect (OSTI)

This paper includes a review of the literature on quantitative adhesion of electroless nickel coatings and then presents recent ring shear quantitative data for the electroless nickel deposited on a variety of substrates. Procedures for obtaining good adhesion between electroless nickel coatings and a variety of aluminum alloys (1100, 2024, 5083, 6061 and 7075), beryllium-copper, 4340 steel, HP 9-4-20 steel, and U-0.75 Ti are outlined. In addition, data are presented on a procedure for activating electroless nickel for subsequent coating with electrodeposited nickel. 6 tables.

Dini, J.W.; Johnson, H.R.

1982-09-20T23:59:59.000Z

329

Quantitative adhesion data for electroless nickel deposited on various substrates  

SciTech Connect (OSTI)

A review of the literature on quantitative adhesion of electroless nickel coatings is given and recent ring shear quantitative data for the electroless nickel deposited on a variety of substrates are presented. Procedures for obtaining good adhesion between electroless nickel coatings and a variety of aluminum alloys (1100, 2024, 5083, 6061 and 7075), beryllium-copper, 4340 steel and HP 9-4-20 steel are outlined. In addition, data are presented on a procedure for activating electroless nickel for subsequent coating with electrodeposited nickel.

Dini, J.W.; Johnson, H.R.

1983-01-01T23:59:59.000Z

330

Epitaxial electrodeposition of freestanding large area single crystal substrates  

SciTech Connect (OSTI)

The authors report on a method for producing freestanding single crystal metal films over large areas using electrodeposition and selective etching. The method can be turned into an inexpensive continuous process for making long ribbons or a large area of single crystal films. Results from a 5x5 mm{sup 2} Ni single crystal film using electron backscattering pattern pole figures and x-ray diffraction demonstrate that the quality of material produced is equivalent to the initial substrate without annealing or polishing.

Shin, Jae Wook; Standley, Adam; Chason, Eric [Brown University, Box D, Providence, Rhode Island 02912 (United States)

2007-06-25T23:59:59.000Z

331

Microfabrication of freestanding metal structures released from graphite substrates.  

SciTech Connect (OSTI)

A sacrificial layer is usually used to release electroformed microstructures. Because of the chemistry applied to the sacrificial layer, only a limited number of metals can be used for electroforming. A novel method to fabricate freestanding electroformed copper structures is presented. A graphite substrate allows the release of the metal part, by abrasive removal of the graphite after electroforming. Results on fabrication of high-aspect-ratio freestanding copper grids are presented; these can be used as x-ray collimator in medical imaging to reduce scattered radiation. This process has potential application to the fabrication of injection molds and microparts on pick-and-place carriers for microelectromechanical systems (MEMS).

Makarova, O. V.; Tang, C.-M.; Mancini, D. C.; Moldovan, N.; Divan, R.; Ryding, D. G.; Lee, R. H.

2002-02-22T23:59:59.000Z

332

Substrate CdTe Efficiency Improvements - Energy Innovation Portal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon CoolingSubstrate CdTe Efficiency

333

Substrate Changes Associated with the Chemistry of Self-Assembled  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIon CoolingSubstrate CdTe EfficiencyMonolayers

334

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline Gallium Oxide ThinIonSubstrate-Induced Band-Gap Opening in

335

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassiveSubmittedStatus TomAbout »Lab (Newport NewsStyle Substrate-Induced

336

Twisted symmetries and integrable systems  

E-Print Network [OSTI]

Symmetry properties are at the basis of integrability. In recent years, it appeared that so called "twisted symmetries" are as effective as standard symmetries in many respects (integrating ODEs, finding special solutions to PDEs). Here we discuss how twisted symmetries can be used to detect integrability of Lagrangian systems which are not integrable via standard symmetries.

G. Cicogna; G. Gaeta

2010-02-07T23:59:59.000Z

337

A novel method of fabricating integrated FETs for MEMS applications.  

SciTech Connect (OSTI)

This paper demonstrates a simple technique for building n-channel MOSFETs and complex micromechanical systems simultaneously instead of serially, allowing a more straightforward integration of complete systems. The fabrication sequence uses few additional process steps and only one additional masking layer compared to a MEMS-only technology. The process flow forms the MOSFET gate electrode using the first level of mechanical polycrystalline silicon, while the MOSFET source and drain regions are formed by dopant diffusions into the substrate from subsequent levels of heavily doped poly that is used for mechanical elements. The process yields devices with good, repeatable electrical characteristics suitable for a wide range of digital and analog applications.

Okandan, Murat; Bennett, Reid Stuart; Draper, Bruce Leroy; Mani, Seethambal S.

2003-07-01T23:59:59.000Z

338

Integrated heterodyne terahertz transceiver  

DOE Patents [OSTI]

A heterodyne terahertz transceiver comprises a quantum cascade laser that is integrated on-chip with a Schottky diode mixer. A terahertz signal can be received by an antenna connected to the mixer, an end facet or sidewall of the laser, or through a separate active section that can amplify the incident signal. The quantum cascade laser couples terahertz local oscillator power to the Schottky diode to mix with the received terahertz signal to provide an intermediate frequency output signal. The fully integrated transceiver optimizes power efficiency, sensitivity, compactness, and reliability. The transceiver can be used in compact, fieldable systems covering a wide variety of deployable applications not possible with existing technology.

Wanke, Michael C. (Albuquerque, NM); Lee, Mark (Albuquerque, NM); Nordquist, Christopher D. (Albuquerque, NM); Cich, Michael J. (Albuquerque, NM)

2012-09-25T23:59:59.000Z

339

Integrated heterodyne terahertz transceiver  

DOE Patents [OSTI]

A heterodyne terahertz transceiver comprises a quantum cascade laser that is integrated on-chip with a Schottky diode mixer. An antenna connected to the Schottky diode receives a terahertz signal. The quantum cascade laser couples terahertz local oscillator power to the Schottky diode to mix with the received terahertz signal to provide an intermediate frequency output signal. The fully integrated transceiver optimizes power efficiency, sensitivity, compactness, and reliability. The transceiver can be used in compact, fieldable systems covering a wide variety of deployable applications not possible with existing technology.

Lee, Mark (Albuquerque, NM); Wanke, Michael C. (Albuquerque, NM)

2009-06-23T23:59:59.000Z

340

Explicit global integrators  

E-Print Network [OSTI]

be advantageous. For this purpose, forward interpolation utilizing Radau Quadrature will be employed. An explicit method of global integration has been developed to estimate a solution to a differential equation. A set of functions P (x), P (x), , P (x) and a... set of points n+1 x , x , , x can be found such that n+1 r x n+1 f(u)du = g P. (x)i'(x. ) 0 i=1 for all x when f(u) is a polynomial of degree n or less. The above process is described by Axelsson as global integration. In . th the cases...

Merriam, Robert Stevens

2012-06-07T23:59:59.000Z

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Smart Grid Integration Laboratory  

SciTech Connect (OSTI)

The initial federal funding for the Colorado State University Smart Grid Integration Laboratory is through a Congressionally Directed Project (CDP), DE-OE0000070 Smart Grid Integration Laboratory. The original program requested in three one-year increments for staff acquisition, curriculum development, and instrumentation â?? all which will benefit the Laboratory. This report focuses on the initial phase of staff acquisition which was directed and administered by DOE NETL/ West Virginia under Project Officer Tom George. Using this CDP funding, we have developed the leadership and intellectual capacity for the SGIC. This was accomplished by investing (hiring) a core team of Smart Grid Systems engineering faculty focused on education, research, and innovation of a secure and smart grid infrastructure. The Smart Grid Integration Laboratory will be housed with the separately funded Integrid Laboratory as part of CSUâ??s overall Smart Grid Integration Center (SGIC). The period of performance of this grant was 10/1/2009 to 9/30/2011 which included one no cost extension due to time delays in faculty hiring. The Smart Grid Integration Laboratoryâ??s focus is to build foundations to help graduate and undergraduates acquire systems engineering knowledge; conduct innovative research; and team externally with grid smart organizations. Using the results of the separately funded Smart Grid Workforce Education Workshop (May 2009) sponsored by the City of Fort Collins, Northern Colorado Clean Energy Cluster, Colorado State University Continuing Education, Spirae, and Siemens has been used to guide the hiring of faculty, program curriculum and education plan. This project develops faculty leaders with the intellectual capacity to inspire its students to become leaders that substantially contribute to the development and maintenance of Smart Grid infrastructure through topics such as: (1) Distributed energy systems modeling and control; (2) Energy and power conversion; (3) Simulation of electrical power distribution system that integrates significant quantities of renewable and distributed energy resources; (4) System dynamic modeling that considers end-user behavior, economics, security and regulatory frameworks; (5) Best practices for energy management IT control solutions for effective distributed energy integration (including security with the underlying physical power systems); (6) Experimental verification of effects of various arrangements of renewable generation, distributed generation and user load types along with conventional generation and transmission. Understanding the core technologies for enabling them to be used in an integrated fashion within a distribution network remains is a benefit to the future energy paradigm and future and present energy engineers.

Wade Troxell

2011-09-30T23:59:59.000Z

342

Integrative Genomics Building  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFunInfrared Land SurfaceVirus-Infected MacaquesIntegration ofIntegrative Genomics

343

Effect of firing conditions on thick film microstructure and solder joint strength for low-temperature, co-fired ceramic substrates  

SciTech Connect (OSTI)

Low-temperature, co-fired ceramics (LTCC) are the substrate material-of-choice for a growing number of multi-chip module (MCM) applications. Unlike the longer-standing hybrid microcircuit technology based upon alumina substrates, the manufacturability and reliability of thick film solder joints on LTCC substrates have not been widely studied. An investigation was undertaken to fully characterize solder joints on these substrates. A surface mount test vehicle with Daisy chain electrical connections was designed and built with Dupont{trademark} 951 tape. The Dupont{trademark} 4569 thick film ink (Au76-Pt21-Pd3 wt.%) was used to establish the surface conductor pattern. The conductor pattern was fired onto the LTCC substrate in a matrix of processing conditions that included: (1) double versus triple prints, (2) dielectric window versus no window, and (3) three firing temperatures (800 C, 875 C and 950 C). Sn63-Pb37 solder paste with an RMA flux was screen printed onto the circuit boards. The appropriate packages, which included five sizes of chip capacitors and four sizes of leadless ceramic chip carriers, were placed on the circuit boards. The test vehicles were oven reflowed under a N{sub 2} atmosphere. Nonsoldered pads were removed from the test vehicles and the porosity of their thick film layers was measured using quantitative image analysis in both the transverse and short transverse directions. A significant dependence on firing temperature was recorded for porosity. The double printed substrates without a dielectric window revealed a thick film porosity of 31.2% at 800 C, 26.2% at 875 C and 20.4% at 950 C. In contrast, the thick film porosity of the triple printed substrates with a dielectric window is 24.1% at 800 C, 23.2% at 875 C and 17.6% at 950 C. These observations were compared with the shear strength of the as-fabricated chip capacitor solder joints to determine the effect of firing conditions on solder joint integrity. The denser films from the higher firing temperatures had correspondingly higher shear strengths. The 0805 chip capacitor had a shear strength of 12.6 {+-} 1.4 lbs. at 800 C, 13.3 {+-} 1.9 lbs. at 875 C and 13.6 {+-} 1.4 lbs. at 950 C for the triple printed substrates with a dielectric window. The trend was similar for the larger capacitors; the 1912's exhibiting shear strengths of 20.5 {+-} 4.8 lbs. at 800 C, 26.2 {+-} 1.7 lbs, at 875 C and 29.0 {+-} 0.2 lbs. at 950 C.

Hernandez, C.L.; Vianco, P.T.; Rejent, J.A.

2000-01-04T23:59:59.000Z

344

Thick adherent dielectric films on plastic substrates and method for depositing same  

DOE Patents [OSTI]

Thick adherent dielectric films deposited on plastic substrates for use as a thermal barrier layer to protect the plastic substrates from high temperatures which, for example, occur during laser annealing of layers subsequently deposited on the dielectric films. It is desirable that the barrier layer has properties including: a thickness of 1 .mu.m or greater, adheres to a plastic substrate, does not lift-off when cycled in temperature, has few or no cracks and does not crack when subjected to bending, resistant to lift-off when submersed in fluids, electrically insulating and preferably transparent. The thick barrier layer may be composed, for example, of a variety of dielectrics and certain metal oxides, and may be deposited on a variety of plastic substrates by various known deposition techniques. The key to the method of forming the thick barrier layer on the plastic substrate is maintaining the substrate cool during deposition of the barrier layer. Cooling of the substrate maybe accomplished by the use of a cooling chuck on which the plastic substrate is positioned, and by directing cooling gas, such as He, Ar and N.sub.2, between the plastic substrate and the cooling chucks. Thick adherent dielectric films up to about 5 .mu.m have been deposited on plastic substrates which include the above-referenced properties, and which enable the plastic substrates to withstand laser processing temperatures applied to materials deposited on the dielectric films.

Wickboldt, Paul (Walnut Creek, CA); Ellingboe, Albert R. (Fremont, CA); Theiss, Steven D. (Woodbury, MN); Smith, Patrick M. (San Ramon, CA)

2002-01-01T23:59:59.000Z

345

Thin-film solar cell fabricated on a flexible metallic substrate  

DOE Patents [OSTI]

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Tuttle, John R.; Noufi, Rommel; Hasoon, Falah S.

2006-05-30T23:59:59.000Z

346

Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate  

DOE Patents [OSTI]

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

2006-05-30T23:59:59.000Z

347

Method for forming silicon on a glass substrate  

DOE Patents [OSTI]

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics. 15 figs.

McCarthy, A.M.

1995-03-07T23:59:59.000Z

348

Microscopic mechanisms of graphene electrolytic delamination from metal substrates  

SciTech Connect (OSTI)

In this paper, hydrogen bubbling delamination of graphene (Gr) from copper using a strong electrolyte (KOH) water solution was performed, focusing on the effect of the KOH concentration (C{sub KOH}) on the Gr delamination rate. A factor of ?10 decrease in the time required for the complete Gr delamination from Cu cathodes with the same geometry was found increasing C{sub KOH} from ?0.05?M to ?0.60?M. After transfer of the separated Gr membranes to SiO{sub 2} substrates by a highly reproducible thermo-compression printing method, an accurate atomic force microscopy investigation of the changes in Gr morphology as a function of C{sub KOH} was performed. Supported by these analyses, a microscopic model of the delamination process has been proposed, where a key role is played by graphene wrinkles acting as nucleation sites for H{sub 2} bubbles at the cathode perimeter. With this approach, the H{sub 2} supersaturation generated at the electrode for different electrolyte concentrations was estimated and the inverse dependence of t{sub d} on C{sub KOH} was quantitatively explained. Although developed in the case of Cu, this analysis is generally valid and can be applied to describe the electrolytic delamination of graphene from several metal substrates.

Fisichella, G. [CNR-IMM, Strada VIII, 5 – 95121 Catania (Italy); Department of Electronic Engineering, University of Catania, Viale A. Doria, 6 – 95125 Catania (Italy); Di Franco, S.; Roccaforte, F.; Giannazzo, F., E-mail: filippo.giannazzo@imm.cnr.it [CNR-IMM, Strada VIII, 5 – 95121 Catania (Italy); Ravesi, S. [STMicroelectronics, Stradale Primosole, 50 – 95121 Catania (Italy)

2014-06-09T23:59:59.000Z

349

Substrate specificity of the sialic acid biosynthetic pathway  

SciTech Connect (OSTI)

Unnatural analogs of sialic acid can be delivered to mammalian cell surfaces through the metabolic transformation of unnatural N-acetylmannosamine (ManNAc) derivatives. In previous studies, mannosamine analogs bearing simple N-acyl groups up to five carbon atoms in length were recognized as substrates by the biosynthetic machinery and transformed into cell-surface sialoglycoconjugates [Keppler, O. T., et al. (2001) Glycobiology 11, 11R-18R]. Such structural alterations to cell surface glycans can be used to probe carbohydrate-dependent phenomena. This report describes our investigation into the extent of tolerance of the pathway toward additional structural alterations of the N-acyl substituent of ManNAc. A panel of analogs with ketone-containing N-acyl groups that varied in the lengthor steric bulk was chemically synthesized and tested for metabolic conversion to cell-surface glycans. We found that extension of the N-acyl chain to six, seven, or eight carbon atoms dramatically reduced utilization by the biosynthetic machinery. Likewise, branching from the linear chain reduced metabolic conversion. Quantitation of metabolic intermediates suggested that cellular metabolism is limited by the phosphorylation of the N-acylmannosamines by ManNAc 6-kinase in the first step of the pathway. This was confirmed by enzymatic assay of the partially purified enzyme with unnatural substrates. Identification of ManNAc 6-kinase as a bottleneck for unnatural sialic acid biosynthesis provides a target for expanding the metabolic promiscuity of mammalian cells.

Jacobs, Christina L.; Goon, Scarlett; Yarema, Kevin J.; Hinderlich, Stephan; Hang, Howard C.; Chai, Diana H.; Bertozzi, Carolyn R.

2001-07-18T23:59:59.000Z

350

Phospholipase A2 Engineering. Deletion of the C-Terminus Segment Changes Substrate Specificity and Uncouples Calcium and Substrate Binding at the  

E-Print Network [OSTI]

channel, and the calcium binding loop are perturbed, but the global conformation is not changed and Uncouples Calcium and Substrate Binding at the Zwitterionic Interface, Baohua Huang,,§ Bao-Zhu Yu,| Joseph and the uncoupling between substrate and calcium binding are interesting and significant. One of the important

Tsai, Ming-Daw

351

Integrated Management Requirements mapping  

SciTech Connect (OSTI)

This document contains five appendices documenting how Sandia implemented the DOE Conduct of Operations (5480.19) and DOE Quality Assurance (5700.6C) orders. It provides a mapping of the Sandia integrated requirements to the specific requirements of each Order and a mapping to Sandia`s approved program for implementing the Conduct of Operations Order.

Holmes, J.T.; Andrews, N.S.

1992-06-01T23:59:59.000Z

352

Integrated Management Requirements mapping  

SciTech Connect (OSTI)

This document contains five appendices documenting how Sandia implemented the DOE Conduct of Operations (5480.19) and DOE Quality Assurance (5700.6C) orders. It provides a mapping of the Sandia integrated requirements to the specific requirements of each Order and a mapping to Sandia's approved program for implementing the Conduct of Operations Order.

Holmes, J.T.; Andrews, N.S.

1992-06-01T23:59:59.000Z

353

Integrated Safety Management  

Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

The order ensures that DOE/NNSA, systematically integrates safety into management and work practices at all levels, so that missions are accomplished efficiently while protecting the workers, the public, and the environment. Cancels DOE M 450.4-1 and DOE M 411.1-1C

2011-04-25T23:59:59.000Z

354

Bioluminescent bioreporter integrated circuit  

DOE Patents [OSTI]

Disclosed are monolithic bioelectronic devices comprising a bioreporter and an OASIC. These bioluminescent bioreporter integrated circuit are useful in detecting substances such as pollutants, explosives, and heavy-metals residing in inhospitable areas such as groundwater, industrial process vessels, and battlefields. Also disclosed are methods and apparatus for environmental pollutant detection, oil exploration, drug discovery, industrial process control, and hazardous chemical monitoring.

Simpson, Michael L. (Knoxville, TN); Sayler, Gary S. (Blaine, TN); Paulus, Michael J. (Knoxville, TN)

2000-01-01T23:59:59.000Z

355

Integrated Safety Management Policy  

Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

The policy establishes DOE's expectation for safety, including integrated safety management that will enable the Department’s mission goals to be accomplished efficiently while ensuring safe operations at all departmental facilities and activities. Cancels DOE P 411.1, DOE P 441.1, DOE P 450.2A, DOE P 450.4, and DOE P 450.7

2011-04-25T23:59:59.000Z

356

INTEGRATED COLLABORATIVE INFORMATION SYSTEMS  

E-Print Network [OSTI]

of the University Graduate School in partial fulfillment of the requirements for the degree Doctor of Philosophy, Indiana University, in partial fulfillment of the requirements for the degree of Doctor of Philosophy the risk for user. This model is motivated by the above concerns to provide flexible mechanism to integrate

357

Design of a lattice-matched III-V-N/Si photovoltaic tandem cell monolithically integrated on silicon  

E-Print Network [OSTI]

Design of a lattice-matched III-V-N/Si photovoltaic tandem cell monolithically integrated cells monolithically grown on a silicon substrate using GaAsPN absorber layer. InGaAs(N) quantum dots emission. For photovoltaic applications, we consider the GaAsPN diluted nitride alloy as the top junction

Paris-Sud XI, Université de

358

Substrate Integrated Waveguide-Fed Tapered Slot Antenna With Smooth Performance Characteristics Over an Ultra-Wide Bandwidth  

E-Print Network [OSTI]

(LTSA) design. From a parametric study involving eight designs, the best compromise LTSA is selected

Bornemann, Jens

359

INTEGRATED ENERGY SYSTEMS: PRODUCTIVITY & BUILDING SCIENCE  

E-Print Network [OSTI]

Integrated Design of Commercial Building Ceiling Systems Integrated Design of Residential Ducting & Air FlowINTEGRATED ENERGY SYSTEMS: PRODUCTIVITY & BUILDING SCIENCE Productivity and Interior Environments Integrated Design of Large Commercial HVAC Systems Integrated Design of Small Commercial HVAC Systems

360

Integrated Ceramic Membrane System for Hydrogen Production  

SciTech Connect (OSTI)

Phase I was a technoeconomic feasibility study that defined the process scheme for the integrated ceramic membrane system for hydrogen production and determined the plan for Phase II. The hydrogen production system is comprised of an oxygen transport membrane (OTM) and a hydrogen transport membrane (HTM). Two process options were evaluated: 1) Integrated OTM-HTM reactor – in this configuration, the HTM was a ceramic proton conductor operating at temperatures up to 900°C, and 2) Sequential OTM and HTM reactors – in this configuration, the HTM was assumed to be a Pd alloy operating at less than 600°C. The analysis suggested that there are no technical issues related to either system that cannot be managed. The process with the sequential reactors was found to be more efficient, less expensive, and more likely to be commercialized in a shorter time than the single reactor. Therefore, Phase II focused on the sequential reactor system, specifically, the second stage, or the HTM portion. Work on the OTM portion was conducted in a separate program. Phase IIA began in February 2003. Candidate substrate materials and alloys were identified and porous ceramic tubes were produced and coated with Pd. Much effort was made to develop porous substrates with reasonable pore sizes suitable for Pd alloy coating. The second generation of tubes showed some improvement in pore size control, but this was not enough to get a viable membrane. Further improvements were made to the porous ceramic tube manufacturing process. When a support tube was successfully coated, the membrane was tested to determine the hydrogen flux. The results from all these tests were used to update the technoeconomic analysis from Phase I to confirm that the sequential membrane reactor system can potentially be a low-cost hydrogen supply option when using an existing membrane on a larger scale. Phase IIB began in October 2004 and focused on demonstrating an integrated HTM/water gas shift (WGS) reactor to increase CO conversion and produce more hydrogen than a standard water gas shift reactor would. Substantial improvements in substrate and membrane performance were achieved in another DOE project (DE-FC26-07NT43054). These improved membranes were used for testing in a water gas shift environment in this program. The amount of net H2 generated (defined as the difference of hydrogen produced and fed) was greater than would be produced at equilibrium using conventional water gas shift reactors up to 75 psig because of the shift in equilibrium caused by continuous hydrogen removal. However, methanation happened at higher pressures, 100 and 125 psig, and resulted in less net H2 generated than would be expected by equilibrium conversion alone. An effort to avoid methanation by testing in more oxidizing conditions (by increasing CO2/CO ratio in a feed gas) was successful and net H2 generated was higher (40-60%) than a conventional reactor at equilibrium at all pressures tested (up to 125 psig). A model was developed to predict reactor performance in both cases with and without methanation. The required membrane area depends on conditions, but the required membrane area is about 10 ft2 to produce about 2000 scfh of hydrogen. The maximum amount of hydrogen that can be produced in a membrane reactor decreased significantly due to methanation from about 2600 scfh to about 2400 scfh. Therefore, it is critical to eliminate methanation to fully benefit from the use of a membrane in the reaction. Other modeling work showed that operating a membrane reactor at higher temperature provides an opportunity to make the reactor smaller and potentially provides a significant capital cost savings compared to a shift reactor/PSA combination.

Schwartz, Joseph; Lim, Hankwon; Drnevich, Raymond

2010-08-05T23:59:59.000Z

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Integrated turbomachine oxygen plant  

SciTech Connect (OSTI)

An integrated turbomachine oxygen plant includes a turbomachine and an air separation unit. One or more compressor pathways flow compressed air from a compressor through one or more of a combustor and a turbine expander to cool the combustor and/or the turbine expander. An air separation unit is operably connected to the one or more compressor pathways and is configured to separate the compressed air into oxygen and oxygen-depleted air. A method of air separation in an integrated turbomachine oxygen plant includes compressing a flow of air in a compressor of a turbomachine. The compressed flow of air is flowed through one or more of a combustor and a turbine expander of the turbomachine to cool the combustor and/or the turbine expander. The compressed flow of air is directed to an air separation unit and is separated into oxygen and oxygen-depleted air.

Anand, Ashok Kumar; DePuy, Richard Anthony; Muthaiah, Veerappan

2014-06-17T23:59:59.000Z

362

Nonlinear integrable ion traps  

SciTech Connect (OSTI)

Quadrupole ion traps can be transformed into nonlinear traps with integrable motion by adding special electrostatic potentials. This can be done with both stationary potentials (electrostatic plus a uniform magnetic field) and with time-dependent electric potentials. These potentials are chosen such that the single particle Hamilton-Jacobi equations of motion are separable in some coordinate systems. The electrostatic potentials have several free adjustable parameters allowing for a quadrupole trap to be transformed into, for example, a double-well or a toroidal-well system. The particle motion remains regular, non-chaotic, integrable in quadratures, and stable for a wide range of parameters. We present two examples of how to realize such a system in case of a time-independent (the Penning trap) as well as a time-dependent (the Paul trap) configuration.

Nagaitsev, S.; /Fermilab; Danilov, V.; /SNS Project, Oak Ridge

2011-10-01T23:59:59.000Z

363

Integrated Deployment and the Energy Systems Integration Facility: Workshop Proceedings  

SciTech Connect (OSTI)

This report summarizes the workshop entitled: Integrated Deployment and the Energy Systems Integration Facility. In anticipation of the opening of the ESIF, NREL held the workshop August 21-23, 2012 and invited participants from utilities, government, industry, and academia to discuss renewable integration challenges and discover new ways to meet them by taking advantage of the ESIF's capabilities.

Kroposki, B.; Werner, M.; Spikes, A.; Komomua, C.

2013-01-01T23:59:59.000Z

364

Integration of optoelectronics and MEMS by free-space micro-optics  

SciTech Connect (OSTI)

This report represents the completion of a three-year Laboratory-Directed Research and Development (LDRD) program to investigate combining microelectromechanical systems (MEMS) with optoelectronic components as a means of realizing compact optomechanical subsystems. Some examples of possible applications are laser beam scanning, switching and routing and active focusing, spectral filtering or shattering of optical sources. The two technologies use dissimilar materials with significant compatibility problems for a common process line. This project emphasized a hybrid approach to integrating optoelectronics and MEMS. Significant progress was made in developing processing capabilities for adding optical function to MEMS components, such as metal mirror coatings and through-vias in the substrate. These processes were used to demonstrate two integration examples, a MEMS discriminator driven by laser illuminated photovoltaic cells and a MEMS shutter or chopper. Another major difficulty with direct integration is providing the optical path for the MEMS components to interact with the light. The authors explored using folded optical paths in a transparent substrate to provide the interconnection route between the components of the system. The components can be surface-mounted by flip-chip bonding to the substrate. Micro-optics can be fabricated into the substrate to reflect and refocus the light so that it can propagate from one device to another and them be directed out of the substrate into free space. The MEMS components do not require the development of transparent optics and can be completely compatible with the current 5-level polysilicon process. They report progress on a MEMS-based laser scanner using these concepts.

WARREN,MIAL E.; SPAHN,OLGA B.; SWEATT,WILLIAM C.; SHUL,RANDY J.; WENDT,JOEL R.; VAWTER,GREGORY A.; KRYGOWSKI,TOM W.; REYES,DAVID NMN; RODGERS,M. STEVEN; SNIEGOWSKI,JEFFRY J.

2000-06-01T23:59:59.000Z

365

Integrable viscous conservation laws  

E-Print Network [OSTI]

We propose an extension of the Dubrovin-Zhang perturbative approach to the study of normal forms for non-Hamiltonian integrable scalar conservation laws. The explicit computation of the first few corrections leads to the conjecture that such normal forms are parameterized by one single functional parameter, named viscous central invariant. A constant valued viscous central invariant corresponds to the well-known Burgers hierarchy. The case of a linear viscous central invariant provides a viscous analog of the Camassa-Holm equation, that formerly appeared as a reduction of a two-component Hamiltonian integrable systems. We write explicitly the negative and positive hierarchy associated with this equation and prove the integrability showing that they can be mapped respectively into the heat hierarchy and its negative counterpart, named the Klein-Gordon hierarchy. A local well-posedness theorem for periodic initial data is also proven. We show how transport equations can be used to effectively construct asymptotic solutions via an extension of the quasi-Miura map that preserves the initial datum. The method is alternative to the method of the string equation for Hamiltonian conservation laws and naturally extends to the viscous case. Using these tools we derive the viscous analog of the Painlev\\'e I2 equation that describes the universal behaviour of the solution at the critical point of gradient catastrophe.

Alessandro Arsie; Paolo Lorenzoni; Antonio Moro

2014-06-25T23:59:59.000Z

366

Integrative Bioengineering Institute  

SciTech Connect (OSTI)

Microfabrication enables many exciting experimental possibilities for medicine and biology that are not attainable through traditional methods. However, in order for microfabricated devices to have an impact they must not only provide a robust solution to a current unmet need, but also be simple enough to seamlessly integrate into standard protocols. Broad dissemination of bioMEMS has been stymied by the common aim of replacing established and well accepted protocols with equally or more complex devices, methods, or materials. The marriage of a complex, difficult to fabricate bioMEMS device with a highly variable biological system is rarely successful. Instead, the design philosophy of my lab aims to leverage a beneficial microscale phenomena (e.g. fast diffusion at the microscale) within a bioMEMS device and adapt to established methods (e.g. multiwell plate cell culture) and demonstrate a new paradigm for the field (adapt instead of replace). In order for the field of bioMEMS to mature beyond novel proof-of-concept demonstrations, researchers must focus on developing systems leveraging these phenomena and integrating into standard labs, which have largely been ignored. Towards this aim, the Integrative Bioengineering Institute has been established.

Eddington, David; Magin,L,Richard; Hetling, John; Cho, Michael

2009-01-09T23:59:59.000Z

367

A Practical Test Method for Mode I Fracture Toughness of Adhesive Joints with Dissimilar Substrates  

SciTech Connect (OSTI)

A practical test method for determining the mode I fracture toughness of adhesive joints with dissimilar substrates will be discussed. The test method is based on the familiar Double Cantilever Beam (DCB) specimen geometry, but overcomes limitations in existing techniques that preclude their use when testing joints with dissimilar substrates. The test method is applicable to adhesive joints where the two bonded substrates have different flexural rigidities due to geometric and/or material considerations. Two specific features discussed are the use of backing beams to prevent substrate damage and a compliance matching scheme to achieve symmetric loading conditions. The procedure is demonstrated on a modified DCB specimen comprised of SRIM composite and thin-section, e-coat steel substrates bonded with an epoxy adhesive. Results indicate that the test method provides a practical means of characterizing the mode I fracture toughness of joints with dissimilar substrates.

Boeman, R.G.; Erdman, D.L.; Klett, L.B.; Lomax, R.D.

1999-09-27T23:59:59.000Z

368

High Efficiency Integrated Package  

SciTech Connect (OSTI)

Solid-state lighting based on LEDs has emerged as a superior alternative to inefficient conventional lighting, particularly incandescent. LED lighting can lead to 80 percent energy savings; can last 50,000 hours – 2-50 times longer than most bulbs; and contains no toxic lead or mercury. However, to enable mass adoption, particularly at the consumer level, the cost of LED luminaires must be reduced by an order of magnitude while achieving superior efficiency, light quality and lifetime. To become viable, energy-efficient replacement solutions must deliver system efficacies of ? 100 lumens per watt (LPW) with excellent color rendering (CRI > 85) at a cost that enables payback cycles of two years or less for commercial applications. This development will enable significant site energy savings as it targets commercial and retail lighting applications that are most sensitive to the lifetime operating costs with their extended operating hours per day. If costs are reduced substantially, dramatic energy savings can be realized by replacing incandescent lighting in the residential market as well. In light of these challenges, Cree proposed to develop a multi-chip integrated LED package with an output of > 1000 lumens of warm white light operating at an efficacy of at least 128 LPW with a CRI > 85. This product will serve as the light engine for replacement lamps and luminaires. At the end of the proposed program, this integrated package was to be used in a proof-of-concept lamp prototype to demonstrate the component’s viability in a common form factor. During this project Cree SBTC developed an efficient, compact warm-white LED package with an integrated remote color down-converter. Via a combination of intensive optical, electrical, and thermal optimization, a package design was obtained that met nearly all project goals. This package emitted 1295 lm under instant-on, room-temperature testing conditions, with an efficacy of 128.4 lm/W at a color temperature of ~2873K and 83 CRI. As such, the package’s performance exceeds DOE’s warm-white phosphor LED efficacy target for 2013. At the end of the program, we assembled an A19 sized demonstration bulb housing the integrated package which met Energy Star intensity variation requirements. With further development to reduce overall component cost, we anticipate that an integrated remote converter package such as developed during this program will find application in compact, high-efficacy LED-based lamps, particularly those requiring omnidirectional emission.

Ibbetson, James

2013-09-15T23:59:59.000Z

369

Thin film transistors on plastic substrates with reflective coatings for radiation protection  

DOE Patents [OSTI]

Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.

Wolfe, Jesse D.; Theiss, Steven D.; Carey, Paul G.; Smith, Patrick M.; Wickboldt, Paul

2003-11-04T23:59:59.000Z

370

Thin film transistors on plastic substrates with reflective coatings for radiation protection  

DOE Patents [OSTI]

Fabrication of silicon thin film transistors (TFT) on low-temperature plastic substrates using a reflective coating so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The TFT can be used in large area low cost electronics, such as flat panel displays and portable electronics such as video cameras, personal digital assistants, and cell phones.

Wolfe, Jesse D. (Fairfield, CA); Theiss, Steven D. (Woodbury, MN); Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Wickbold, Paul (Walnut Creek, CA)

2006-09-26T23:59:59.000Z

371

Environmentally-assisted technique for transferring devices onto non-conventional substrates  

DOE Patents [OSTI]

A device fabrication method includes: (1) providing a growth substrate including a base and an oxide layer disposed over the base; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.

Lee, Chi-Hwan; Kim, Dong Rip; Zheng, Xiaolin

2014-08-26T23:59:59.000Z

372

Method for improving the oxidation-resistance of metal substrates coated with thermal barrier coatings  

DOE Patents [OSTI]

A method for providing a protective coating on a metal-based substrate is disclosed. The method involves the application of an aluminum-rich mixture to the substrate to form a discontinuous layer of aluminum-rich particles, followed by the application of a second coating over the discontinuous layer of aluminum-rich particles. Aluminum diffuses from the aluminum-rich layer into the substrate, and into any bond coat layer which is subsequently applied. Related articles are also described.

Thompson, Anthony Mark (Niskayuna, NY); Gray, Dennis Michael (Delanson, NY); Jackson, Melvin Robert (Niskayuna, NY)

2002-01-01T23:59:59.000Z

373

Lectures on integrable Hamiltonian systems  

E-Print Network [OSTI]

We consider integrable Hamiltonian systems in a general setting of invariant submanifolds which need not be compact. For instance, this is the case a global Kepler system, non-autonomous integrable Hamiltonian systems and integrable systems with time-dependent parameters.

G. Sardanashvily

2013-03-21T23:59:59.000Z

374

Integrated test schedule for buried waste integrated demonstration  

SciTech Connect (OSTI)

The Integrated Test Schedule incorporates the various schedules the Buried Waste Integrated Demonstration (BWID) supports into one document. This document contains the Federal Facilities Agreement and Consent Order schedules for the Idaho National Engineering Laboratory, Hanford Reservation, Oak Ridge Reservation, and Fernald Environmental Materials Center. Included in the Integrated Test Schedule is the Buried Waste Integrated Demonstration ``windows of opportunity`` schedule. The ``windows of opportunity`` schedule shows periods of time in which Buried Waste Integrated Demonstration Program-sponsored technology demonstrations could support key decisions in the Federal Facilities Agreement and Consent Order. Schedules for the Buried Waste Integrated Demonstration-sponsored technology task plans are categorized by technology area and divided by current fiscal year and out-year. Total estimated costs for Buried Waste Integrated Demonstration-sponsored Technology Task Plans for FY-92 through FY-97 are $74.756M.

Brown, J.T.; McDonald, J.K.

1992-05-01T23:59:59.000Z

375

Integrated test schedule for buried waste integrated demonstration  

SciTech Connect (OSTI)

The Integrated Test Schedule incorporates the various schedules the Buried Waste Integrated Demonstration (BWID) supports into one document. This document contains the Federal Facilities Agreement and Consent Order schedules for the Idaho National Engineering Laboratory, Hanford Reservation, Oak Ridge Reservation, and Fernald Environmental Materials Center. Included in the Integrated Test Schedule is the Buried Waste Integrated Demonstration windows of opportunity'' schedule. The windows of opportunity'' schedule shows periods of time in which Buried Waste Integrated Demonstration Program-sponsored technology demonstrations could support key decisions in the Federal Facilities Agreement and Consent Order. Schedules for the Buried Waste Integrated Demonstration-sponsored technology task plans are categorized by technology area and divided by current fiscal year and out-year. Total estimated costs for Buried Waste Integrated Demonstration-sponsored Technology Task Plans for FY-92 through FY-97 are $74.756M.

Brown, J.T.; McDonald, J.K.

1992-05-01T23:59:59.000Z

376

Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates  

E-Print Network [OSTI]

We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to NbTiN deposition to optimize the metal-substrate interface, and deep reactive-ion etching of the substrate to displace the substrate-vacuum interfaces away from high electric fields. The temperature and power dependence of resonator behavior indicate that two-level systems still contribute significantly to energy dissipation, suggesting that more interface optimization could further improve performance.

A. Bruno; G. de Lange; S. Asaad; K. L. van der Enden; N. K. Langford; L. DiCarlo

2015-02-13T23:59:59.000Z

377

Electrodeposition of U and Pu on Thin C and Ti Substrates  

SciTech Connect (OSTI)

Physics experiments aimed at deducing key parameters for use in a variety of programs critical to the mission of the National Laboratories require actinide targets placed onto various substrates. The target material quantity and the substrate desired depend upon the type of experiment being designed. The physicist(s) responsible for the experimental campaign will consult with the radiochemistry staff as to the feasibility of producing a desired target/substrate combination. In this report they discuss the production of U and Pu targets on very thin C and Ti substrates. The techniques used, plating cells designed for, tips, and limits is discussed.

Henderson, R A; Gostic, J M

2010-05-19T23:59:59.000Z

378

E-Print Network 3.0 - alkyne substrate interaction Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of the American Chemical Society is published by the American Chemical Summary: of a dye-conjugated alkene and alkyne after mixing each substrate with the catalyst under...

379

E-Print Network 3.0 - active sers substrate Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Biology and Medicine 16 Delivered by Ingenta to: UNIVERSIDADE SAO PAULO IF Summary: and ORC activated substrates is useful in pro- viding directives for the construction of...

380

Lapped substrate for enhanced backsurface reflectivity in a thermophotovoltaic energy conversion system  

DOE Patents [OSTI]

A method for fabricating a thermophotovoltaic energy conversion cell including a thin semiconductor wafer substrate (10) having a thickness (.beta.) calculated to decrease the free carrier absorption on a heavily doped substrate; wherein the top surface of the semiconductor wafer substrate is provided with a thermophotovoltaic device (11), a metallized grid (12) and optionally an antireflective (AR) overcoating; and, the bottom surface (10') of the semiconductor wafer substrate (10) is provided with a highly reflecting coating which may comprise a metal coating (14) or a combined dielectric/metal coating (17).

Baldasaro, Paul F (Clifton Park, NY); Brown, Edward J (Clifton Park, NY); Charache, Greg W (Clifton Park, NY); DePoy, David M (Clifton Park, NY)

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Reactor design for uniform chemical vapor deposition-grown films without substrate rotation  

DOE Patents [OSTI]

A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.

Wanlass, Mark (Golden, CO)

1987-01-01T23:59:59.000Z

382

Reactor design for uniform chemical vapor deposition-grown films without substrate rotation  

DOE Patents [OSTI]

A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.

Wanlass, M.

1985-02-19T23:59:59.000Z

383

E-Print Network 3.0 - altered myocardial substrate Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

myocardial substrate Page: << < 1 2 3 4 5 > >> 1 Diastolic Dysfunction in Hypertensive Heart Disease Is Associated With Altered Myocardial Metabolism Summary: Diastolic...

384

E-Print Network 3.0 - artificial filter substrates Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The low-loss polyimide substrates... recentdemonstrationsofMM-basedmodulatorsandfrequency tunable filters 14-16. An ... Source: Boston University, Center for Nanoscience and...

385

Lapped substrate for enhanced backsurface reflectivity in a thermophotovoltaic energy conversion system  

DOE Patents [OSTI]

A method for fabricating a thermophotovoltaic energy conversion cell including a thin semiconductor wafer substrate (10) having a thickness (.beta.) calculated to decrease the free carrier absorption on a heavily doped substrate; wherein the top surface of the semiconductor wafer substrate is provided with a thermophotovoltaic device (11), a metallized grid (12) and optionally an antireflective (AR) overcoating; and, the bottom surface (10') of the semiconductor wafer substrate (10) is provided with a highly reflecting coating which may comprise a metal coating (14) or a combined dielectric/metal coating (17).

Baldasaro, Paul F; Brown, Edward J; Charache, Greg W; DePoy, David M

2000-09-05T23:59:59.000Z

386

Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate  

DOE Patents [OSTI]

A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment.

Feng, Zhu (Albany, CA); Brewer, Marilee (Goleta, CA); Brown, Ian (Berkeley, CA); Komvopoulos, Kyriakos (Orinda, CA)

1994-01-01T23:59:59.000Z

387

Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate  

DOE Patents [OSTI]

A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment. 6 figures.

Feng, Z.; Brewer, M.; Brown, I.; Komvopoulos, K.

1994-05-03T23:59:59.000Z

388

Method for applying a barrier layer to a silicon based substrate  

DOE Patents [OSTI]

A method for applying a barrier layer which comprises a barium-strontium aluminosilicate to a silicon containing substrate which inhibits the formation of cracks.

Eaton, Harry E. (Woodstock, CT); Lawton, Thomas H. (Wethersfield, CT)

2002-01-01T23:59:59.000Z

389

Method for applying a barrier layer to a silicon based substrate  

DOE Patents [OSTI]

A method for applying a barrier layer which comprises a barium-strontium aluminosilicate to a silicon containing substrate which inhibits the formation of cracks.

Eaton, Harry E. (Woodstock, CT); Lawton, Thomas H. (Wethersfield, CT)

2001-01-01T23:59:59.000Z

390

Analysis of the “3-Omega” method for substrates and thick films of anisotropic thermal conductivity  

E-Print Network [OSTI]

surfaces. The sense (thermometer) line is optional.to the interface beneath the thermometer. Thus, theredrop across the substrate-thermometer interface in Fig. 6(a)

Ramu, Ashok; Bowers, John E

2012-01-01T23:59:59.000Z

391

Commercial Buildings Integration Program Overview - 2013 BTO...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Commercial Buildings Integration Program Overview - 2013 BTO Peer Review Commercial Buildings Integration Program Overview - 2013 BTO Peer Review Commercial Buildings Integration...

392

Integrated Assessment Modeling  

SciTech Connect (OSTI)

This paper discusses the role of Integrated Assessment models (IAMs) in climate change research. IAMs are an interdisciplinary research platform, which constitutes a consistent scientific framework in which the large-scale interactions between human and natural Earth systems can be examined. In so doing, IAMs provide insights that would otherwise be unavailable from traditional single-discipline research. By providing a broader view of the issue, IAMs constitute an important tool for decision support. IAMs are also a home of human Earth system research and provide natural Earth system scientists information about the nature of human intervention in global biogeophysical and geochemical processes.

Edmonds, James A.; Calvin, Katherine V.; Clarke, Leon E.; Janetos, Anthony C.; Kim, Son H.; Wise, Marshall A.; McJeon, Haewon C.

2012-10-31T23:59:59.000Z

393

Integrity in Depth  

E-Print Network [OSTI]

to the common problem of colluding with the attitude that shame is something to be ashamed of. He agrees with Andrew Morrison that for any in dividual with major deficits of the self, shame, not rage, is the principal affect. Beebe advocates "a psychology... is "Working on Integrity." In its opening section, "Fidelity to Process," Beebe shares a poi gnant therapeutic interchange in which he makes a mistake that leads to the patient's being angry at him. This rage facilitates the patient's discovery of her own...

Beebe, John

1992-01-01T23:59:59.000Z

394

BIOTIC INTEGRITY OF STREAMS IN THE SAVANNAH RIVER SITE INTEGRATOR OPERABLE UNITS, 1996 TO 2003  

SciTech Connect (OSTI)

The Savannah River Site (SRS) has been divided into six Integrator Operable Units (IOUs) that correspond to the watersheds of the five major streams on the SRS (Upper Three Runs, Fourmile Branch, Pen Branch, Steel Creek, and Lower Three Runs) and the portions of the Savannah River and Savannah River Swamp associated with the SRS. The streams are the primary integrators within each IOU because they potentially receive, through surface or subsurface drainage, soluble contaminants from all waste sites within their watersheds. If these contaminants reach biologically significant levels, they would be expected to effect the numbers, types, and health of stream organisms. In this study, biological sampling was conducted within each IOU as a measure of the cumulative ecological effects of the waste sites within the IOUs. The use of information from biological sampling to assess environmental quality is often termed bioassessment. The IOU bioassessment program included 38 sites in SRS streams and nine sites in the Savannah River. Sampling was conducted in 1996 to 1998, 2000, and 2003. Four bioassessment methods were used to evaluate ecological conditions in the IOU streams: the Index of Biotic Integrity, the Fish Health Assessment Index, measurement of fish tissue contaminant levels, and two benthic macroinvertebrate indices. The Index of Biotic Integrity (IBI) is an EPA supported method based on comparison of ecologically important and sensitive fish assemblage variables between potentially disturbed and reference (i.e., undisturbed) sites. It is designed to assess the ability of a stream to support a self-sustaining biological community and ecological processes typical of undisturbed, natural conditions. Since many types of contaminants can bioaccumulate, fish tissue contaminant data were used to determine the types of chemicals fish were exposed to and their relative magnitudes among IOUs. The Fish Health Assessment Index (HAI) is an EPA supported method for assessing the health and condition of individual fish based on dissection and internal examination. It helped to determine whether contaminant concentrations were high enough to adversely affect the health of individual fish. The benthic macroinvertebrate multimetric index (HDMI), used in 1997 to 2000, is a method for assessing stream health based on macroinvertebrate data collected with Hester-Dendy artificial substrates. In 2003 it was replaced with the Multiple Habitat Sampling protocol, a SCDHEC method for collecting and analyzing benthic macroinvertebrate data from natural substrate. These two macroinvertebrate based methods were used in conjunction with the fish based IBI to provide a more comprehensive assessment of ecological conditions. Lastly, habitat data were collected from each stream to assist in determining whether ecological integrity was compromised by physical factors (e.g., erosion) or chemical factors (e.g., discharge of toxic materials). Fish from many SRS streams exhibited evidence of contamination as a result of current or former SRS operations. The most prevalent radiological contaminants were cesium-137 (highest in fish from Lower Three Runs followed by Steel Creek and Fourmile Branch), tritium (highest in fish from Fourmile Branch followed by Pen Branch, and the Savannah River swamp), and strontium (highest in fish from Fourmile Branch followed by Pen Branch). Radiological contaminants were also found in fish collected from the Savannah River near the mouths of contaminated SRS streams; however, contaminant levels were substantially lower than in fish from the streams themselves. Mercury levels were moderately elevated in fish from some streams, particularly Lower Three Runs, and in fish from the Savannah River. Despite the occurrence of contaminants, most SRS streams exhibited comparatively high biotic integrity (based on IBI, HDMI, and MHSP scores) and minimal levels of pathology among individual fish (e.g., presence of tumors or extreme thinness), indicating that contaminant levels were generally insufficient to cause significant ecological de

Paller, M; Susan Dyer, S

2004-11-08T23:59:59.000Z

395

Integrating preconcentrator heat controller  

DOE Patents [OSTI]

A method and apparatus for controlling the electric resistance heating of a metallic chemical preconcentrator screen, for example, used in portable trace explosives detectors. The length of the heating time-period is automatically adjusted to compensate for any changes in the voltage driving the heating current across the screen, for example, due to gradual discharge or aging of a battery. The total deposited energy in the screen is proportional to the integral over time of the square of the voltage drop across the screen. Since the net temperature rise, .DELTA.T.sub.s, of the screen, from beginning to end of the heating pulse, is proportional to the total amount of heat energy deposited in the screen during the heating pulse, then this integral can be calculated in real-time and used to terminate the heating current when a pre-set target value has been reached; thereby providing a consistent and reliable screen temperature rise, .DELTA.T.sub.s, from pulse-to-pulse.

Bouchier, Francis A. (Albuquerque, NM); Arakaki, Lester H. (Edgewood, NM); Varley, Eric S. (Albuquerque, NM)

2007-10-16T23:59:59.000Z

396

Epitaxial growth of 100-?m thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al{sub 2}O{sub 3} substrates  

SciTech Connect (OSTI)

Thick barium hexaferrite BaFe{sub 12}O{sub 19} (BaM) films having thicknesses of ?100??m were epitaxially grown on GaN/Al{sub 2}O{sub 3} substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4?M{sub s}, was measured for as-grown films to be 4.6 ± 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ?100?Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simple powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.

Hu, Bolin; Su, Zhijuan; Bennett, Steve; Chen, Yajie, E-mail: y.chen@neu.edu; Harris, Vincent G. [Center for Microwave Magnetic Materials and Integrated Circuits and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

2014-05-07T23:59:59.000Z

397

Highly textured oxypnictide superconducting thin films on metal substrates  

SciTech Connect (OSTI)

Highly textured NdFeAs(O,F) thin films have been grown on ion beam assisted deposition-MgO/Y{sub 2}O{sub 3}/Hastelloy substrates by molecular beam epitaxy. The oxypnictide coated conductors showed a superconducting transition temperature (T{sub c}) of 43?K with a self-field critical current density (J{sub c}) of 7.0×10{sup 4}?A/cm{sup 2} at 5?K, more than 20 times higher than powder-in-tube processed SmFeAs(O,F) wires. Albeit higher T{sub c} as well as better crystalline quality than Co-doped BaFe{sub 2}As{sub 2} coated conductors, in-field J{sub c} of NdFeAs(O,F) was lower than that of Co-doped BaFe{sub 2}As{sub 2}. These results suggest that grain boundaries in oxypnictides reduce J{sub c} significantly compared to that in Co-doped BaFe{sub 2}As{sub 2} and, hence biaxial texture is necessary for high J{sub c.}.

Iida, Kazumasa, E-mail: iida@nuap.nagoya-u.ac.jp; Kurth, Fritz; Grinenko, Vadim; Hänisch, Jens [Institute for Metallic Materials, IFW Dresden, D-01171 Dresden (Germany); Chihara, Masashi; Sumiya, Naoki; Hatano, Takafumi; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Chikusa, Nagoya 464-8603 (Japan); Ichinose, Ataru; Tsukada, Ichiro [Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196 (Japan); Matias, Vladimir [iBeam Materials, Inc., 2778A Agua Fria Street, Santa Fe, New Mexico 87507 (United States); Holzapfel, Bernhard [Institute for Technical Physics, Karlsruhe Institute of Technology, Hermann von Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany)

2014-10-27T23:59:59.000Z

398

Fundamentals of embossing nanoimprint lithography in polymer substrates.  

SciTech Connect (OSTI)

The convergence of micro-/nano-electromechanical systems (MEMS/NEMS) and biomedical industries is creating a need for innovation and discovery around materials, particularly in miniaturized systems that use polymers as the primary substrate. Polymers are ubiquitous in the microelectronics industry and are used as sensing materials, lithography tools, replication molds, microfluidics, nanofluidics, and biomedical devices. This diverse set of operational requirements dictates that the materials employed must possess different properties in order to reduce the cost of production, decrease the scale of devices to the appropriate degree, and generate engineered devices with new functional properties at cost-competitive levels of production. Nanoscale control of polymer deformation at a massive scale would enable breakthroughs in all of the aforementioned applications, but is currently beyond the current capabilities of mass manufacturing. This project was focused on developing a fundamental understanding of how polymers behave under different loads and environments at the nanoscale in terms of performance and fidelity in order to fill the most critical gaps in our current knowledgebase on this topic.

Simmons, Blake Alexander; King, William P. (University of Illinois, Urbana IL)

2011-02-01T23:59:59.000Z

399

Surface characterization of silica glass substrates treated by atomic hydrogen  

SciTech Connect (OSTI)

Silica glass substrates with very flat surfaces were exposed to atomic hydrogen at different temperatures and durations. An atomic force microscope was used to measure root-mean-square (RMS) roughness and two-dimensional power spectral density (PSD). In the treatment with atomic hydrogen up to 900 °C, there was no significant change in the surface. By the treatment at 1000 °C, the changes in the RMS roughness and the PSD curves were observed. It was suggested that these changes were caused by etching due to reactions of atomic hydrogen with surface silica. By analysis based on the k-correlation model, it was found that the spatial frequency of the asperities became higher with an increase of the treatment time. Furthermore, the data showed that atomic hydrogen can flatten silica glass surfaces by controlling heat-treatment conditions. - Highlights: • Silica glass surface was treated by atomic hydrogen at various temperatures. • Surface roughness was measured by an atomic force microscope. • Roughness data were analyzed by two-dimensional power spectral density. • Atomic hydrogen can flatten silica glass surfaces.

Inoue, Hiroyuki [Institute of Industrial Science, The University of Tokyo, Meguro-ku, Tokyo 153-8505 (Japan); Masuno, Atsunobu, E-mail: masuno@iis.u-tokyo.ac.jp [Institute of Industrial Science, The University of Tokyo, Meguro-ku, Tokyo 153-8505 (Japan); Ishibashi, Keiji [Canon ANELVA Corporation, Asao-ku, Kawasaki, Kanagawa 215-8550 (Japan); Tawarayama, Hiromasa [Kawazoe Frontier Technologies Corporation, Kuden 931-113, Sakae-ku, Yokohama, Kanagawa 247-0014 (Japan); Zhang, Yingjiu; Utsuno, Futoshi [Institute of Industrial Science, The University of Tokyo, Meguro-ku, Tokyo 153-8505 (Japan); Koya, Kazuo; Fujinoki, Akira [Shin Etsu Quartz Prod. Co., Ltd., Res and Applicat Lab, Fukushima 963-0725 (Japan); Kawazoe, Hiroshi [Kawazoe Frontier Technologies Corporation, Kuden 931-113, Sakae-ku, Yokohama, Kanagawa 247-0014 (Japan)

2013-12-15T23:59:59.000Z

400

Value Analysis of Alternative Diesel Particulate Filter (DPF) Substrates  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion |Energy Usage »of EnergyTheTwoVulnerabilities | Department of|VTA,an Integrated April

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Selective light sintering of Aerosol-Jet printed silver nanoparticle inks on polymer substrates  

SciTech Connect (OSTI)

Printing silver nanoparticle inks to generate conductive structures for electronics on polymer substrates has gained increasing relevance in recent years. In this context, the Aerosol-Jet Technology is well suited to print silver ink on 3D-Molded Interconnect Devices (MID). The deposited ink requires thermal post-treatment to obtain sufficient electrical conductivity and adhesion. However, commonly used oven sintering cannot be applied for many thermoplastic substrates due to low melting temperatures. In this study a new sintering technology, selective light sintering, is presented, based on the focused, continuous light beam of a xenon lamp. Sintering experiments were conducted with Aerosol-Jet printed structures on various polycarbonate (PC) substrates. Especially on neat, light transparent PC, silver tracks were evenly sintered with marginal impact to the substrate. Electrical conductivities significantly exceed the values obtained with conventional oven sintering. Adhesive strength is sufficient for conductive tracks. Experiments with non-transparent PC substrates led to substrate damage due to increased light absorption. Therefore a concept for a variation of light sintering was developed, using optical filters. First experiments showed significant reduction of substrate damage and good sintering qualities. The highly promising results of the conducted experiments provide a base for further investigations to increase adhesion and qualifying the technology for MID applications and a broad spectrum of thermoplastic substrates.

Schuetz, K., E-mail: klaus.schuetz1@gmx.de, E-mail: hoerber@faps.uni-erlangen.de, E-mail: franke@faps.uni-erlangen.de; Hoerber, J., E-mail: klaus.schuetz1@gmx.de, E-mail: hoerber@faps.uni-erlangen.de, E-mail: franke@faps.uni-erlangen.de; Franke, J., E-mail: klaus.schuetz1@gmx.de, E-mail: hoerber@faps.uni-erlangen.de, E-mail: franke@faps.uni-erlangen.de [Institute for Factory Automation and Production Systems, University of Erlangen-Nuremberg (Germany)

2014-05-15T23:59:59.000Z

402

Improved One-dimensional Analysis of CMOS Photodiode Including Epitaxial-Substrate Junction  

E-Print Network [OSTI]

1 Improved One-dimensional Analysis of CMOS Photodiode Including Epitaxial-Substrate Junction J. S-dimensional analysis of CMOS photodiode has been derived in which the effect of the substrate, which forms a high-empirical expression exhibits a good agreement with the measured spectral response of n+ pepi photodiodes fabricated

Hornsey, Richard

403

Moleculardynamics simulation of thermal stress at the (100) diamond/substrate interface: effect of film continuity  

E-Print Network [OSTI]

with the development of advanced CVD techniques 2 producing polycrystalline diamond of quality approachingMolecular­dynamics simulation of thermal stress at the (100) diamond/substrate interface: effect at the (100) diamond/substrate interface. The stress­induced binding energy reduction obtained

Adler, Joan

404

THERMAL FATIGUE AND FAILURE OF ELECTRONIC POWER DEVICE SUBSTRATES. S. Pietranico1&2  

E-Print Network [OSTI]

. For large thermal amplitudes, the failure occurs in DBC substrates, which are copper/ceramic- 1 - THERMAL FATIGUE AND FAILURE OF ELECTRONIC POWER DEVICE SUBSTRATES. S. Pietranico1&2 , S their thermal fatigue and failure. For example, for power modules mounted on the engine of an aircraft

Paris-Sud XI, Université de

405

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates  

E-Print Network [OSTI]

Bendable single crystal silicon thin film transistors formed by printing on plastic substrates E on plastic substrates using an efficient dry transfer printing technique. In these devices, free standing-Si is then transferred, to a specific location and with a controlled orientation, onto a thin plastic sheet

Rogers, John A.

406

Short Channel Amorphous-Silicon TFT's on High-Temperature Clear Plastic Substrates  

E-Print Network [OSTI]

Short Channel Amorphous-Silicon TFT's on High-Temperature Clear Plastic Substrates K. Long, H@princeton.edu To achieve light-weight flexible AMOLED displays on plastic substrates, the substratesmust be optically clear for plastic. High-temperature plastics such as polyimide (e.g. KaptonB E) have a glass transition temperature

407

Substrate-limited electron dynamics in graphene S. Fratini1,2 and F. Guinea2  

E-Print Network [OSTI]

Substrate-limited electron dynamics in graphene S. Fratini1,2 and F. Guinea2 1Institut Néel dynamics in graphene. We find that the quasiparticle spectrum acquires a finite broadening due to the long-range interaction with the polar modes at the interface between graphene and the substrate. This mechanism results

Boyer, Edmond

408

E-Print Network 3.0 - alanine-rich c-kinase substrate Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

M myristoylated alanine-rich C kinase substrate protein, with or without 0.3 mM CaCl2, * This work was supported... Syntide-2 as a substrate, and 1 mM CaCl2 and 2 M CaM for...

409

Site-specific labeling of cellular proteins with unnatural substrates of biotin ligases  

E-Print Network [OSTI]

E. coli biotin ligase (BirA) catalyzes the site-specific ligation of biotin to the lysine within its 15-amino acid peptide substrate (AP). We harnessed the high peptide substrate specificity of BirA to develop a general ...

Chen, Irwin

2007-01-01T23:59:59.000Z

410

Fish Assemblages and Substrates in the Middle Wabash River, USA Robert Mueller, Jr.1,2  

E-Print Network [OSTI]

Fish Assemblages and Substrates in the Middle Wabash River, USA Robert Mueller, Jr.1,2 and Mark Pyron1 We collected fishes at 28 sites of the middle Wabash River, Indiana, using a boat electrofisher for fish assemblage variation that was explained by variation in water depth and substrate frequency

Pyron, Mark

411

Self-assembly of triangular quantum dots on (111)A substrates by droplet epitaxy  

SciTech Connect (OSTI)

We report the self-assembly of triangular GaAs quantum dots (QDs) on (111)A substrates using droplet epitaxy. Shape transition from hexagonal to triangular QDs is observed with increasing crystallizing temperature. The mechanism of the morphological change is discussed in terms of different growth rates of step edges on a (111)A substrate.

Jo, M.; Mano, T.; Abbarchi, M.; Kuroda, T. [Advanced Photonics Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sakoda, K. [Advanced Photonics Materials Unit, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

412

Spectroscopic Raman Nanometrology of Graphene and Graphene Multilayers on Arbitrary Substrates  

E-Print Network [OSTI]

Spectroscopic Raman Nanometrology of Graphene and Graphene Multilayers on Arbitrary Substrates I to be an effective tool for characterization of graphene and graphene multilayers on the standard Si/SiO2 (300 nm) substrates, which allows one to determine non-destructively the number of the graphene layers and assess

413

Room temperature 1.6 m electroluminescence from Ge light emitting diode on Si substrate  

E-Print Network [OSTI]

Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate Szu n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device.4670) Optical materials; (230.3670) Light-emitting diodes. References and links 1. L. C. Kimerling, "Silicon

Vuckovic, Jelena

414

Manipulation of magnetic anisotropy of Co ultrathin films by substrate engineering  

E-Print Network [OSTI]

Manipulation of magnetic anisotropy of Co ultrathin films by substrate engineering Yuki Saisyu September 2011) The magnetic and structural properties of Co films prepared on various substrates were-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The magnetic signals of the Co films

Hasegawa, Shuji

415

Effects of oxygen on the growth characteristics of carbon nanotubes on conductive substrates  

E-Print Network [OSTI]

The effects of oxygen on Fe-catalyzed carbon nanotube (CNT) growth on Ta substrates was studied. CNTs were grown on Fe thin-film catalysts deposited on silicon substrates via exposure to C?H? in a thermal chemical vapor ...

Bonaparte, Ryan K

2009-01-01T23:59:59.000Z

416

Cell-Permeable Near-Infrared Fluorogenic Substrates for Imaging -Lactamase Activity  

E-Print Network [OSTI]

Cell-Permeable Near-Infrared Fluorogenic Substrates for Imaging -Lactamase Activity Bengang Xing,11 Several fluorogenic substrates for Bla have been reported,4,12 but none work for infrared or near-infrared fluorescence imaging. Infrared/near-infrared light is preferred in molecular imaging studies of living subjects

Xing, Bengang

417

Single crystal growth and heteroepitaxy of polyacene thin films on arbitrary substrates  

E-Print Network [OSTI]

in a number of low-cost, large area electronic applications such as flat panel displays. Organic thin film as other substrates.6-12 Recently, significant progress has been made towards fabricating high quality is to prepare single crystal films on arbitrary substrates. Here we describe two significant advances towards

Headrick, Randall L.

418

Molecular Dynamics Simulation of Nucleation of SWNT from a Metal Particle on a Substrate  

E-Print Network [OSTI]

a transition metal cluster on a substrate is studied using classical molecular dynamics (MD) simulations between pure metal and metal-carbide. Graphite structure gradually precipitates from the edgeMolecular Dynamics Simulation of Nucleation of SWNT from a Metal Particle on a Substrate Yasushi

Maruyama, Shigeo

419

Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics  

SciTech Connect (OSTI)

The project validated the use of stainless steel flexible substrate coated with silicone-based resin dielectric, developed by Dow Corning Corporation, for Cu(InGa)Se2 based photovoltaics. The projects driving force was the high performance of Cu(InGa)Se2 based photovoltaics coupled with potential cost reduction that could be achieved with dielectric coated SS web substrate.

ERTEN ESER

2012-01-22T23:59:59.000Z

420

CONTROLLED PART-TO-SUBSTRATE MICRO-ASSEMBLY VIA ELECTROCHEMICAL MODULATION OF SURFACE ENERGY  

E-Print Network [OSTI]

the hydro- phobicity of the binding sites between micro-parts and substrates. Active assembly sites consistCONTROLLED PART-TO-SUBSTRATE MICRO-ASSEMBLY VIA ELECTROCHEMICAL MODULATION OF SURFACE ENERGY-2500, USA ABSTRACT A process designed for repeated parallel micro- assembly has been achieved by controlling

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Edge coating apparatus with movable roller applicator for solar cell substrates  

DOE Patents [OSTI]

A non-contact edge coating apparatus includes an applicator for applying a coating material on an edge of a solar cell substrate and a control system configured to drive the applicator. The control system may drive the applicator along an axis to maintain a distance with an edge of the substrate as the substrate is rotated to have the edge coated with a coating material. The applicator may include a recessed portion into which the edge of the substrate is received for edge coating. For example, the applicator may be a roller with a groove. Coating material may be introduced into the groove for application onto the edge of the substrate. A variety of coating materials may be employed with the apparatus including hot melt ink and UV curable plating resist.

Pavani, Luca; Abas, Emmanuel

2012-12-04T23:59:59.000Z

422

Method and apparatus for separating continuous cast strip from a rotating substrate  

DOE Patents [OSTI]

The continuous casting of strip, ribbon and wire is improved by using a free jet nozzle which provides a fluid that follows a rotating substrate surface to the separation point. The nozzle includes an inclined surface having a ratio of its length to the gap between the substrate and the nozzle edge of 5:1 to 15:1. The inclined surface improves the ability of the jet to tangentially follow the substrate in a direction opposite to its rotation to the separation point. This also allows a close positioning of the nozzle to the substrate which serves to provide a back-up mechanical separation means by using the edge of nozzle lip. The nozzle may be rotated from its operating position for cleaning of the substrate and the nozzle.

King, Edward L. (Trenton, OH); Follstaedt, Donald W. (Middletown, OH); Sussman, Richard C. (West Chester, OH)

1991-01-01T23:59:59.000Z

423

Method and apparatus for separating continuous cast strip from a rotating substrate  

DOE Patents [OSTI]

The continuous casting of strip, ribbon and wire is improved by using a free jet nozzle which provides a fluid that follows a rotating substrate surface to the separation point. The nozzle includes an inclined surface having a ratio of its length to the gap between the substrate and the nozzle edge of 5:1 to 15:1. The inclined surface improves the ability of the jet to tangentially follow the substrate in a direction opposite to its rotation to the separation point. This also allows a close positioning of the nozzle to the substrate which serves to provide a back-up mechanical separation means by using the edge of nozzle lip. The nozzle may be rotated from its operating position for cleaning of the substrate and the nozzle. 4 figures.

King, E.L.; Follstaedt, D.W.; Sussman, R.C.

1991-08-20T23:59:59.000Z

424

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents [OSTI]

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1994-01-01T23:59:59.000Z

425

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents [OSTI]

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells.

Lauf, Robert J. (Oak Ridge, TN)

1996-01-01T23:59:59.000Z

426

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents [OSTI]

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the solar energy conversion efficiency of thin-film photovoltaic cells. 4 figures.

Lauf, R.J.

1994-04-26T23:59:59.000Z

427

Method for producing textured substrates for thin-film photovoltaic cells  

DOE Patents [OSTI]

The invention pertains to the production of ceramic substrates used in the manufacture of thin-film photovoltaic cells used for directly converting solar energy to electrical energy. Elongated ribbon-like sheets of substrate precursor containing a mixture of ceramic particulates, a binder, and a plasticizer are formed and then while green provided with a mechanically textured surface region used for supporting the thin film semiconductor of the photovoltaic cell when the sheets of the substrate precursor are subsequently cut into substrate-sized shapes and then sintered. The textured surface pattern on the substrate provides enhanced light trapping and collection for substantially increasing the, solar energy conversion efficiency of thin-film photovoltaic cells. 4 figs.

Lauf, R.J.

1996-04-02T23:59:59.000Z

428

Process for ion-assisted laser deposition of biaxially textured layer on substrate  

DOE Patents [OSTI]

A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film.

Russo, Richard E. (Walnut Creek, CA); Reade, Ronald P. (Berkeley, CA); Garrison, Stephen M. (Palo Alto, CA); Berdahl, Paul (Oakland, CA)

1995-01-01T23:59:59.000Z

429

Do CVD grown graphene films have antibacterial activity on metallic substrates?  

E-Print Network [OSTI]

Accurate assessment of the antibacterial activity of graphene requires consideration of both the graphene fabrication method and, for supported films, the properties of the substrate. Large-area graphene films produced by chemical vapor deposition were grown directly on copper substrates or transferred on a gold substrate and their effect on the viability and proliferation of the Gram-positive bacteria Staphylococcus aureus and the Gram-negative bacteria Escherichia coli were assessed. The viability and the proliferation of both bacterial species were not affected when they were grown on a graphene film entirely covering the gold substrate, indicating that conductivity plays no role on bacterial viability and graphene has no antibacterial activity against S. aureus and E. coli. On the other hand, antibacterial activity was observed when graphene coated the copper substrates, resulting from the release of bactericidal cupric ions in inverse proportion to the graphene surface coverage.

Dellieu, Louis; Reckinger, Nicolas; Didembourg, Christian; Letesson, Jean-Jacques; Sarrazin, Michael; Deparis, Olivier; Matroule, Jean-Yves; Colomer, Jean-François

2014-01-01T23:59:59.000Z

430

National Renewable Energy Laboratory's Energy Systems Integration...  

Broader source: Energy.gov (indexed) [DOE]

National Renewable Energy Laboratory's Energy Systems Integration Facility Overview National Renewable Energy Laboratory's Energy Systems Integration Facility Overview This...

431

Integrated Vehicle Thermal Management Systems (VTMS) Analysis...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Integrated Vehicle Thermal Management Power Electronic Thermal System Performance and Integration Characterization and Development of Advanced Heat Transfer Technologies...

432

Integrated Chemical Geothermometry System for Geothermal Exploration...  

Broader source: Energy.gov (indexed) [DOE]

geothermal reservoir temperatures from integrated chemical analyses of spring and well fluids. tracersspycherintegratedchemical.pdf More Documents & Publications Integrated...

433

Integrated optical sensor  

DOE Patents [OSTI]

An integrated optical sensor for arc welding having multifunction feedback control is described. The sensor, comprising generally a CCD camera and diode laser, is positioned behind the arc torch for measuring weld pool position and width, standoff distance, and post-weld centerline cooling rate. Computer process information from this sensor is passed to a controlling computer for use in feedback control loops to aid in the control of the welding process. Weld pool position and width are used in a feedback loop, by the weld controller, to track the weld pool relative to the weld joint. Sensor standoff distance is used in a feedback loop to control the contact tip to base metal distance during the welding process. Cooling rate information is used to determine the final metallurgical state of the weld bead and heat affected zone, thereby controlling post-weld mechanical properties. 6 figures.

Watkins, A.D.; Smartt, H.B.; Taylor, P.L.

1994-01-04T23:59:59.000Z

434

Integrated optical sensor  

DOE Patents [OSTI]

An integrated optical sensor for arc welding having multifunction feedback control. The sensor, comprising generally a CCD camera and diode laser, is positioned behind the arc torch for measuring weld pool position and width, standoff distance, and post-weld centerline cooling rate. Computer process information from this sensor is passed to a controlling computer for use in feedback control loops to aid in the control of the welding process. Weld pool position and width are used in a feedback loop, by the weld controller, to track the weld pool relative to the weld joint. Sensor standoff distance is used in a feedback loop to control the contact tip to base metal distance during the welding process. Cooling rate information is used to determine the final metallurgical state of the weld bead and heat affected zone, thereby controlling post-weld mechanical properties.

Watkins, Arthur D. (Idaho Falls, ID); Smartt, Herschel B. (Idaho Falls, ID); Taylor, Paul L. (Idaho Falls, ID)

1994-01-01T23:59:59.000Z

435

Thermoalgebras and path integral  

SciTech Connect (OSTI)

Using a representation for Lie groups closely associated with thermal problems, we derive the algebraic rules of the real-time formalism for thermal quantum field theories, the so-called thermo-field dynamics (TFD), including the tilde conjugation rules for interacting fields. These thermo-group representations provide a unified view of different approaches for finite-temperature quantum fields in terms of a symmetry group. On these grounds, a path integral formalism is constructed, using Bogoliubov transformations, for bosons, fermions and non-abelian gauge fields. The generalization of the results for quantum fields in (S{sup 1}){sup d}xR{sup D-d} topology is addressed.

Khanna, F.C. [Theoretical Physics Institute, University of Alberta, Edmonton, AB T6G 2J1 (Canada); TRIUMF, Vancouver, BC, V6T 2A3 (Canada)], E-mail: khanna@phys.ualberta.ca; Malbouisson, A.P.C. [Centro Brasileiro de Pesquisas Fisicas/MCT, 22290-180 Rio de Janeiro, RJ (Brazil)], E-mail: adolfo@cbpf.br; Malbouisson, J.M.C. [Instituto de Fisicas, Universidade Federal da Bahia, 40210-340 Salvador, BA (Brazil)], E-mail: jmalboui@ufba.br; Santana, A.E. [Instituto de Fisicas, Universidade de Brasilia, 70910-900 Brasilia, DF (Brazil)], E-mail: asantana@fis.unb.br

2009-09-15T23:59:59.000Z

436

Understanding Substrate Features Influenced by Pretreatments that Limit Biomass Deconstruction by Enzymes  

E-Print Network [OSTI]

Figure 1.1 An integrated biorefinery for producing fuels,3 Figure 2.1 An integrated biorefinery producing fuel,Figure 1.1 An integrated biorefinery for producing fuels,

Gao, Xiadi

2013-01-01T23:59:59.000Z

437

Dual chamber system providing simultaneous etch and deposition on opposing substrate sides for growing low defect density epitaxial layers  

DOE Patents [OSTI]

A dual-chamber reactor can include a housing enclosing a volume having a divider therein, where the divider defines a first chamber and a second chamber. The divider can include a substrate holder that supports at least one substrate and exposes a first side of the substrate to the first chamber and a second side of the substrate to the second chamber. The first chamber can include an inlet for delivering at least one reagent to the first chamber for forming a film on the first side of the substrate, and the second chamber can include a removal device for removing material from the second side of the substrate.

Kulkarni, Nagraj S. (Knoxville, TN); Kasica, Richard J. (Ashburn, VA) ,

2011-03-08T23:59:59.000Z

438

Substrate having high absorptance and emitance black electroless nicel coating and a process for producing the same  

SciTech Connect (OSTI)

A substrate having high absorptance and emittance is produced by roughening the surface of the substrate, immersing the substrate in a first electroless plating bath having a low phosphorus to nickel concentration, then immersing the substrate in a second electroless plating bath having a phosphorus to nickel concentration higher than that of said first electroless plating bath. Thereafter, the resulting electroless nickel-phosphorus alloy coated substrate is immersed in an aqueous acidic etchant bath containing sulfuric acid, nitric acid and divalent nickel to develop a highly blackened surface on said substrate.

Greeson, R.; Geikas, G. I.

1985-04-16T23:59:59.000Z

439

Data Integration using Web Services  

E-Print Network [OSTI]

In this paper we examine the opportunities for data integration in the context of the emerging Web Services systems development paradigm. The paper introduces the ...

Hansen, Mark

2003-02-10T23:59:59.000Z

440

Arnold Schwarzenegger INTEGRATED FORECAST AND  

E-Print Network [OSTI]

Arnold Schwarzenegger Governor INTEGRATED FORECAST AND RESERVOIR MANAGEMENT (INFORM) FOR NORTHERN Manager Joseph O' Hagan Project Manager Kelly Birkinshaw Program Area Manager ENERGY-RELATED ENVIRONMENTAL

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Advancing Energy Systems through Integration  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

and reliability Community Scale Heating and Cooling 4 ever-greenenergy.com Ever-Green Energy Integrated Energy System flexible & renewable fuel sources reliable and...

442

Structured luminescence conversion layer  

DOE Patents [OSTI]

An apparatus device such as a light source is disclosed which has an OLED device and a structured luminescence conversion layer deposited on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The structured luminescence conversion layer contains regions such as color-changing and non-color-changing regions with particular shapes arranged in a particular pattern.

Berben, Dirk; Antoniadis, Homer; Jermann, Frank; Krummacher, Benjamin Claus; Von Malm, Norwin; Zachau, Martin

2012-12-11T23:59:59.000Z

443

Advanced Integrated Traction System  

SciTech Connect (OSTI)

The United States Department of Energy elaborates the compelling need for a commercialized competitively priced electric traction drive system to proliferate the acceptance of HEVs, PHEVs, and FCVs in the market. The desired end result is a technically and commercially verified integrated ETS (Electric Traction System) product design that can be manufactured and distributed through a broad network of competitive suppliers to all auto manufacturers. The objectives of this FCVT program are to develop advanced technologies for an integrated ETS capable of 55kW peak power for 18 seconds and 30kW of continuous power. Additionally, to accommodate a variety of automotive platforms the ETS design should be scalable to 120kW peak power for 18 seconds and 65kW of continuous power. The ETS (exclusive of the DC/DC Converter) is to cost no more than $660 (55kW at $12/kW) to produce in quantities of 100,000 units per year, should have a total weight less than 46kg, and have a volume less than 16 liters. The cost target for the optional Bi-Directional DC/DC Converter is $375. The goal is to achieve these targets with the use of engine coolant at a nominal temperature of 105C. The system efficiency should exceed 90% at 20% of rated torque over 10% to 100% of maximum speed. The nominal operating system voltage is to be 325V, with consideration for higher voltages. This project investigated a wide range of technologies, including ETS topologies, components, and interconnects. Each technology and its validity for automotive use were verified and then these technologies were integrated into a high temperature ETS design that would support a wide variety of applications (fuel cell, hybrids, electrics, and plug-ins). This ETS met all the DOE 2010 objectives of cost, weight, volume and efficiency, and the specific power and power density 2015 objectives. Additionally a bi-directional converter was developed that provides charging and electric power take-off which is the first step towards enabling a smart-grid application. GM under this work assessed 29 technologies; investigated 36 configurations/types power electronics and electric machines, filed 41 invention disclosures; and ensured technology compatibility with vehicle production. Besides the development of a high temperature ETS the development of industrial suppliers took place because of this project. Suppliers of industrial power electronic components are numerous, but there are few that have traction drive knowledge. This makes it difficult to achieve component reliability, durability, and cost requirements necessary of high volume automotive production. The commercialization of electric traction systems for automotive industry requires a strong diverse supplier base. Developing this supplier base is dependent on a close working relationship between the OEM and supplier so that appropriate component requirements can be developed. GM has worked closely with suppliers to develop components for electric traction systems. Components that have been the focus of this project are power modules, capacitors, heavy copper boards, current sensors, and gate drive and controller chip sets. Working with suppliers, detailed component specifications have been developed. Current, voltage, and operation environment during the vehicle drive cycle were evaluated to develop higher resolution/accurate component specifications.

Greg Smith; Charles Gough

2011-08-31T23:59:59.000Z

444

Effect of Substrate Thickness on Oxide Scale Spallation for Solid Oxide Fuel Cells  

SciTech Connect (OSTI)

In this paper, the effect of the ferritic substrate's thickness on the delamination/spallation of the oxide scale was investigated experimentally and numerically. At the high-temperature oxidation environment of solid oxide fuel cells (SOFCs), a combination of growth stress with thermal stresses may lead to scale delamination/buckling and eventual spallation during SOFC stack cooling, even leading to serious degradation of cell performance. The growth stress is induced by the growth of the oxide scale on the scale/substrate interface, and thermal stress is induced by a mismatch of the coefficient of thermal expansion between the oxide scale and the substrate. The numerical results show that the interfacial shear stresses, which are the driving force of scale delamination between the oxide scale and the ferritic substrate, increase with the growth of the oxide scale and also with the thickness of the ferritic substrate; i.e., the thick ferritic substrate can easily lead to scale delamination and spallation. Experimental observation confirmed the predicted results of the delamination and spallation of the oxide scale on the ferritic substrate.

Liu, Wenning N.; Sun, Xin; Stephens, Elizabeth V.; Khaleel, Mohammad A.

2011-07-01T23:59:59.000Z

445

Reactor design for uniform chemical vapor deposition-grown films without substrate rotation  

SciTech Connect (OSTI)

A reactor vessel is described for chemical vapor deposition of a uniform semiconductor film on a substrate, comprising: a generally cylindrical reaction chamber for receiving a substrate and a flow of reaction gas capable of depositing a film on the substrate under the conditions of the chamber, the chamber having upper and lower portion and being oriented about a vertical axis; a supporting means having a substrate support surface generally perpendicular to the vertical axis for carrying the substrate within the lower portion of the reaction chamber in a predetermined relative position with respect to the upper portion of the reaction chamber, the upper portion including a cylindrically shaped confinement chamber. The confinement chamber has a smaller diameter than the lower portion of the reaction chamber and is positioned above the substrate support surface; and a means for introducing a reaction gas into the confinement chamber in a nonaxial direction so as to direct the reaction gas into the lower portion of the reaction chamber with a non-axial flow having a rotational component with respect to the vertical axis. In this way the reaction gas defines an inward vortex flow pattern with respect to the substrate surface.

Wanlass, M.

1987-03-17T23:59:59.000Z

446

Integrated system checkout report  

SciTech Connect (OSTI)

The planning and preparation phase of the Integrated Systems Checkout Program (ISCP) was conducted from October 1989 to July 1991. A copy of the ISCP, DOE-WIPP 90--002, is included in this report as an appendix. The final phase of the Checkout was conducted from July 10, 1991, to July 23, 1991. This phase exercised all the procedures and equipment required to receive, emplace, and retrieve contact handled transuranium (CH TRU) waste filled dry bins. In addition, abnormal events were introduced to simulate various equipment failures, loose surface radioactive contamination events, and personnel injury. This report provides a detailed summary of each days activities during this period. Qualification of personnel to safely conduct the tasks identified in the procedures and the abnormal events were verified by observers familiar with the Bin-Scale CH TRU Waste Test requirements. These observers were members of the staffs of Westinghouse WID Engineering, QA, Training, Health Physics, Safety, and SNL. Observers representing a number of DOE departments, the state of new Mexico, and the Defense Nuclear Facilities Safety Board observed those Checkout activities conducted during the period from July 17, 1991, to July 23, 1991. Observer comments described in this report are those obtained from the staff member observers. 1 figs., 1 tab.

Not Available

1991-08-14T23:59:59.000Z

447

Integrated Transportation System Design Optimization  

E-Print Network [OSTI]

Integrated Transportation System Design Optimization by Christine Taylor B.S. Cornell University by . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Professor Jaime Peraire Chairman, Department Graduate Committee #12;2 #12;Integrated Transportation System Abstract Traditionally, the design of a transportation system has focused on either the vehicle design

448

Communication Needs and Integration Options  

E-Print Network [OSTI]

" links that carry data from smart meters to the control center. The consensus on HAN technologiesCommunication Needs and Integration Options for AMI in the Smart Grid Future Grid Initiative White System #12;Communication Needs and Integration Options for AMI in the Smart Grid Prepared for the Project

449

Communication Needs and Integration Options  

E-Print Network [OSTI]

home area networks (HANs) than "backhaul" links that carry data from smart meters to the control centerCommunication Needs and Integration Options for AMI in the Smart Grid Future Grid Initiative White System #12;Communication Needs and Integration Options for AMI in the Smart Grid Prepared for the Project

450

CFT, Integrable Models Liouville Gravity  

E-Print Network [OSTI]

CFT, Integrable Models And Liouville Gravity Chernogolovka 2009 Sunday June 28, 2009. Conference as one of components of their L, A pairs. #12;CFT, Integrable Models And Liouville Gravity Chernogolovka Gravity Chernogolovka, 2009 Tuesday June 30, 2009. CONFERENCE HALL 09:30­10:10 Herman Boos (Wuppertal

Fominov, Yakov

451

Energy Systems Integration Facility Overview  

ScienceCinema (OSTI)

The U.S. Department of Energy's Energy Systems Integration Facility (ESIF) is located at the National Renewable Energy Laboratory is the right tool, at the right time... a first-of-its-kind facility that addresses the challenges of large-scale integration of clean energy technologies into the energy systems that power the nation.

Arvizu, Dan; Chistensen, Dana; Hannegan, Bryan; Garret, Bobi; Kroposki, Ben; Symko-Davies, Martha; Post, David; Hammond, Steve; Kutscher, Chuck; Wipke, Keith

2014-06-10T23:59:59.000Z

452

Integral transformation and Darboux transformation  

E-Print Network [OSTI]

We review Darboux-Crum transformation of Heun's differential equation. By rewriting an integral transformation of Heun's differential equation into a form of elliptic functions, we see that the integral representation is a generalization of Darboux-Crum transformation. We also consider conservation of monodromy with respect to the transformations.

Kouichi Takemura

2009-11-11T23:59:59.000Z

453

Philips Lumileds Is Exploring the Use of Silicon Substrates to Lower the Cost of LEDs  

Broader source: Energy.gov [DOE]

With the help of DOE funding, Philips Lumileds is exploring the use of nitride epitaxy on 150mm silicon substrates to produce low-cost, warm-white, high-performance general-illumination LEDs. Most LEDs are made with C-plane sapphire substrates, but silicon—at roughly half a penny per square millimeter—is much cheaper, and it's also easier to obtain. Philips Lumileds is attempting to adapt the use of silicon to the manufacture of LEDs, drawing upon the knowledge base and depreciated equipment of the computer industry, which has been using silicon substrates for decades.

454

Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system  

DOE Patents [OSTI]

A thermophotovoltaic energy conversion device and a method for making the device are disclosed. The device includes a substrate formed from a bulk single crystal material having a bandgap (E{sub g}) of 0.4 eV < E{sub g} < 0.7 eV and an emitter fabricated on the substrate formed from one of a p-type or an n-type material. Another thermophotovoltaic energy conversion device includes a host substrate formed from a bulk single crystal material and lattice-matched ternary or quaternary III-V semiconductor active layers. 12 figs.

Charache, G.W.; Baldasaro, P.F.; Nichols, G.J.

1998-06-23T23:59:59.000Z

455

Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process  

DOE Patents [OSTI]

A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

1993-01-01T23:59:59.000Z

456

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate  

DOE Patents [OSTI]

The present invention generally provides a semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Mazur, Eric; Shen, Mengyan

2013-12-03T23:59:59.000Z

457

Evaluation of GaN substrates grown in supercritical basic ammonia  

SciTech Connect (OSTI)

GaN crystals grown by the basic ammonothermal method were investigated for their use as substrates for device regrowth. X-ray diffraction analysis indicated that the substrates contained multiple grains while secondary ion mass spectroscopy (SIMS) revealed a high concentration of hydrogen, oxygen, and sodium. Despite these drawbacks, the emission from the light emitting diode structures grown by metal organic chemical vapor deposition on both the c-plane and m-plane epitaxial wafers was demonstrated. The SIMS depth profiles showed that the diffusion of the alkali metal from the substrate into the epitaxial film was small, especially in the m-direction.

Saito, Makoto; Yamada, Hisashi; Iso, Kenji; Sato, Hitoshi; Hirasawa, Hirohiko; Kamber, Derrick S.; Hashimoto, Tadao; Baars, Steven P. den; Speck, James S.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2009-02-02T23:59:59.000Z

458

The effect of substrates on the Raman spectrum of graphene: Graphene-on-sapphire and graphene-on-glass  

E-Print Network [OSTI]

The effect of substrates on the Raman spectrum of graphene: Graphene- on-sapphire and graphene The authors investigated the influence of substrates on Raman scattering spectrum from graphene. The room-temperature Raman signatures from graphene layers on GaAs, sapphire, and glass substrates were compared with those

459

Modeling Oxygen and Water Flows in Peat Substrate with Root Uptakes R. Naasz, J.-C. Michel and S. Charpentier  

E-Print Network [OSTI]

191 Modeling Oxygen and Water Flows in Peat Substrate with Root Uptakes R. Naasz, J.-C. Michel to Horticulture Angers France Keywords: peat, simulation, substrate-plant system, water and oxygen availability, we first precisely characterized all transfer properties of a peat substrate (water retention

Paris-Sud XI, Université de

460

High Aspect Pattern Formation by Integration of Micro Inkjetting and Electroless Plating  

E-Print Network [OSTI]

This paper reports on formation of high aspect micro patterns on low temperature co-fired ceramic (LTCC) substrates by integrating micro inkjetting with electroless plating. Micro inkjetting was realized by using an inkjetting printer that ejects ink droplets from a printhead. This printhead consists of a glass nozzle with a diameter of 50 micrometers and a piezoelectric transducer that is coated on the nozzle. The silver colloidal solution was inkjetted on a sintered CT800 ceramic substrate, followed by curing at 200 degrees C for 60 minutes. As a result, the silver trace with a thickness of 200 nm was obtained. The substrate, with the ejected silver thin film as the seed layer, was then immersed into a preinitiator solution to coat a layer of palladium for enhancing the deposition of nickel. Electroless nickel plating was successfully conducted at a rate of 0.39 micrometers /min, and the thickness of traces was plated up to 84 micrometers. This study demonstrates that the integration of inkjetting with plat...

Gian, P W; Liang, Y N; Lok, B K; Lu, C W; Ooi, B L

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates  

DOE Patents [OSTI]

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate. The crystalline semiconductor layer will be prepared to have a lattice parameter (a') that is related to the substrate lattice parameter (a). The lattice parameter (a') maybe related to the lattice parameter (a) by a scaling factor derived from a geometric relationship between the respective crystal lattices.

Norman, Andrew G; Ptak, Aaron J

2013-08-13T23:59:59.000Z

462

The evaluation of the corrosion resistance of metallic substrates protected by a hydrophobic coating  

E-Print Network [OSTI]

the performance of hydrophobic materials in corrosion service, metallic substrates of aluminum, copper, and steel were coated with a hydrophobic coating termed conformal and subjected to a variety of intensive analytical examinations including Electrochemical...

Lee, Daniel G

1996-01-01T23:59:59.000Z

463

Relative Habitat Value Of Alternative Substrates Used In Oyster Reef Restoration  

E-Print Network [OSTI]

and in limited supply. This study incorporated field and laboratory experiments to assess the relative habitat value of alternative substrates (crushed concrete, porcelain, crushed limestone, and river rock, as well as oyster shell) for larval oyster recruitment...

George, Lindsey Marie

2013-08-08T23:59:59.000Z

464

p-CdTe/n-CdS photovoltaic cells in the substrate configuration.  

E-Print Network [OSTI]

??In this thesis, p-CdTe/n-CdS solar cells in the substrate configuration have been studied. The focus is on device fabrication, performance optimization, and the development of… (more)

Wu, Hsiang Ning (1984 - )

2014-01-01T23:59:59.000Z

465

Molybdenum Nitride Films in the Back Contact Structure of Flexible Substrate CdTe Solar Cells.  

E-Print Network [OSTI]

??CdTe solar cells in the superstrate configuration have achieved record efficiencies of 16% but those in the substrate configuration have reached efficiencies of only 7.8%.… (more)

Guntur, Vasudha

2011-01-01T23:59:59.000Z

466

Strain relaxation of CdTe films growing on lattice-mismatched substrates  

E-Print Network [OSTI]

gap approaches the value of bulk CdTe crystals. This makesbulk crystals with crystalline CdTe ?lms for the purpose ofthe top layer of thick CdTe ?lms grown on Si(001) substrate

Ma, Zhixun; Yu, Kin Man; Walukiewicz, Wladek; Yu, Peter Y.; Mao, Samuel S.

2009-01-01T23:59:59.000Z

467

System for monitoring the growth of crystalline films on stationary substrates  

DOE Patents [OSTI]

A system for monitoring the growth of crystalline films on stationary or rotating substrates includes a combination of some or all of the elements including a photodiode sensor for detecting the intensity of incoming light and converting it to a measurable current, a lens for focusing the RHEED pattern emanating from the phosphor screen onto the photodiode, an interference filter for filtering out light other than that which emanates from the phosphor screen, a current amplifier for amplifying and convening the current produced by the photodiode into a voltage, a computer for receiving the amplified photodiode current for RHEED data analysis, and a graphite impregnated triax cable for improving the signal to noise ratio obtained while sampling a stationary or rotating substrate. A rotating stage for supporting the substrate with diametrically positioned electron beam apertures and an optically encoded shaft can also be used to accommodate rotation of the substrate during measurement.

Sheldon, Peter (Lakewood, CO)

1996-01-01T23:59:59.000Z

468

System for monitoring the growth of crystalline films on stationary substrates  

DOE Patents [OSTI]

A system for monitoring the growth of crystalline films on stationary or rotating substrates includes a combination of some or all of the elements including a photodiode sensor for detecting the intensity of incoming light and converting it to a measurable current, a lens for focusing the RHEED pattern emanating from the phosphor screen onto the photodiode, an interference filter for filtering out light other than that which emanates from the phosphor screen, a current amplifier for amplifying and converting the current produced by the photodiode into a voltage, a computer for receiving the amplified photodiode current for RHEED data analysis, and a graphite impregnated triax cable for improving the signal to noise ratio obtained while sampling a stationary or rotating substrate. A rotating stage for supporting the substrate with diametrically positioned electron beam apertures and an optically encoded shaft can also be used to accommodate rotation of the substrate during measurement.

Sheldon, Peter (Lakewood, CO)

1995-01-01T23:59:59.000Z

469

System for monitoring the growth of crystalline films on stationary substrates  

DOE Patents [OSTI]

A system for monitoring the growth of crystalline films on stationary or rotating substrates includes a combination of some or all of the elements including a photodiode sensor for detecting the intensity of incoming light and converting it to a measurable current, a lens for focusing the RHEED pattern emanating from the phosphor screen onto the photodiode, an interference filter for filtering out light other than that which emanates from the phosphor screen, a current amplifier for amplifying and converting the current produced by the photodiode into a voltage, a computer for receiving the amplified photodiode current for RHEED data analysis, and a graphite impregnated triaxial cable for improving the signal-to-noise ratio obtained while sampling a stationary or rotating substrate. A rotating stage for supporting the substrate with diametrically positioned electron beam apertures and an optically encoded shaft can also be used to accommodate rotation of the substrate during measurement. 16 figs.

Sheldon, P.

1995-10-10T23:59:59.000Z

470

System for monitoring the growth of crystalline films on stationary substrates  

DOE Patents [OSTI]

A system for monitoring the growth of crystalline films on stationary or rotating substrates includes a combination of some or all of the elements including a photodiode sensor for detecting the intensity of incoming light and converting it to a measurable current, a lens for focusing the RHEED pattern emanating from the phosphor screen onto the photodiode, an interference filter for filtering out light other than that which emanates from the phosphor screen, a current amplifier for amplifying and convening the current produced by the photodiode into a voltage, a computer for receiving the amplified photodiode current for RHEED data analysis, and a graphite impregnated triaxial cable for improving the signal to noise ratio obtained while sampling a stationary or rotating substrate. A rotating stage for supporting the substrate with diametrically positioned electron beam apertures and an optically encoded shaft can also be used to accommodate rotation of the substrate during measurement. 16 figs.

Sheldon, P.

1996-12-31T23:59:59.000Z

471

Electrical characterization of metal-to-insulator transition in iron silicide thin films on sillicone substrates.  

E-Print Network [OSTI]

??Iron Silicide (FeSi) films deposited on silicon substrates with the native SiO2 layer have shown a Metal-to-Insulator Transition (MIT) of more than four order of… (more)

Weerasinghe, Hasitha C

2006-01-01T23:59:59.000Z

472

Manufacturing conductive patterns on polymeric substrates : development of a microcontact printing process  

E-Print Network [OSTI]

The focus of this research was to develop a process suitable for creating very high resolution conductive patterns on polymer substrates, in a way that can be scaled to high volume manufacturing. The original motivation ...

Hale, Melinda (Melinda Rae)

2013-01-01T23:59:59.000Z

473

Reflectivity of silver and silver-coated substrates from 25 C to 800 C  

SciTech Connect (OSTI)

A bench top facility was used to evaluate the reflectivity of several candidate coating-substrate combinations in vacuum at elevated temperatures. Silver was selected as the reflective coating of choice, while copper, nickel, electroless nickel on copper, and 304 stainless steel were selected as substrates. Pure silver, with no coating at all, was also evaluated. An optically flat silver-coated sapphire substrate was used as a standard. All metal substrates were either metallurgically polished or diamond turned to a mirror finish prior to silver deposition. Silicon dioxide was used as a protective coating in most cases. Reflectivity measurements were made at room temperature in the visible range with a spectrophotometer, and at elevated temperatures up to 800 C with a helium-neon laser at 632 nm. Results from the high temperature reflectivity measurements will be presented.

Jaworske, D.A. [NASA Lewis Research Center, Cleveland, OH (United States)

1997-12-31T23:59:59.000Z

474

ACTIVE SUBSTRATES FOR OPTOELECTRONIC INTERCONNECT Donald Chiarulli, Steven Levitan, Jason Bakos  

E-Print Network [OSTI]

ACTIVE SUBSTRATES FOR OPTOELECTRONIC INTERCONNECT Donald Chiarulli, Steven Levitan, Jason Bakos Semiconductor ABSTRACT We present the design of an intelligent optoelectronic chip carrier (IOCC the sapphire. The result is an optoelectronic package that supports full CMOS performance, is mechanically

Bakos, Jason D.

475

Modeling and control of a silicon substrate heater for carbon nanotube growth experiments  

E-Print Network [OSTI]

The precision engineering research group at MIT is working on carbon nanotube growth experiments on silicon substrates and in microfabricated silicon devices, to try to produce improved bulk nanotube growth. For this thesis, ...

Held, David (David A.)

2005-01-01T23:59:59.000Z

476

ClpX interactions with ClpP, SspB, protein substrate and nucleotide  

E-Print Network [OSTI]

ClpXP and related ATP-dependent proteases are implements of cytosolic protein destruction. They couple chemical energy, derived from ATP hydrolysis, to the selection, unfolding, and degradation of protein substrates with ...

Hersch, Greg Louis

2006-01-01T23:59:59.000Z

477

Evaluation of Chiral r-Cyanoesters as General Fluorescent Substrates for Screening Enantioselective Esterases  

E-Print Network [OSTI]

with chiral xenobiotics (6, 7). To meet the rapidly increasing demand for the optically pure form of chiral compounds including drugs, pesticides, fine chemicals, and even plastics (8), chiral general substrates

Hammock, Bruce D.

478

Partition coefficients of substrates and products and solvent selection for biocatalysis under nearly anhydrous conditions  

SciTech Connect (OSTI)

The effect of solvent on the activity of mushroom tyrosinase toward three substrates was studied at a constant water activity of either 0.74 or 0.86. No simple correlation was observed between enzyme activity and log P, but partition coefficients of substrate (P[sub s]) and product (P[sub p]) gave systematic relations with enzyme activity. When initial reaction rates were considered, there was a bell-shaped relationship between enzyme and P[sub s] with an optimal P[sub s] for each substrate. This can be explained by assuming that the solvent affected the enzyme activity primarily by affecting the substrate concentration in the aqueous layer around the catalyst where the enzymic reaction occurs. When long-term reaction rates were considered, a high P[sub p]/P[sub s] ratio was consistent with preservation of enzyme activity.

Yang, Zhen; Robb, D.A. (Univ. of Strathclyde, Glasgow (United Kingdom). Dept. of Bioscience and Biotechnology)

1994-03-05T23:59:59.000Z

479

Epitaxial Growth of GaN-based LEDs on Simple Sacrificial Substrates  

SciTech Connect (OSTI)

The objective of this project is to produce alternative substrate technologies for GaN-based LEDs by developing an ALD interlayer of Al{sub 2}O{sub 3} on sacrificial substrates such as ZnO and Si. A sacrificial substrate is used for device growth that can easily be removed using a wet chemical etchant leaving only the thin GaN epi-layer. After substrate removal, the GaN LED chip can then be mounted in several different ways to a metal heat sink/reflector and light extraction techniques can then be applied to the chip and compared for performance. Success in this work will lead to high efficiency LED devices with a simple low cost fabrication method and high product yield as stated by DOE goals for its solid state lighting portfolio.

Ian Ferguson; Chris Summers

2009-12-31T23:59:59.000Z

480

Specific Effects of Fiber Size and Fiber Swelling on Biomass Substrate Surface Area and Enzymatic Digestibility  

SciTech Connect (OSTI)

To clarify the specific effect of biomass substrate surface area on its enzymatic digestibility, factors of fiber size reduction and swelling changes were investigated by using poplar substrates with controlled morphological and chemical properties after modified chemical pulping. Results showed that fiber size changes had insignificant influence on enzymatic hydrolysis, although the external surface area increased up to 41% with the reduction of fiber size. Swelling changes caused by increased biomass fiber porosities after PFI refining showed a significant influence on the efficiency of enzymatic hydrolysis. It is also found that chemical properties such as xylan and lignin content can influence the swelling effect. Xylan is confirmed to facilitate substrate hydrolysability by swelling, while lignin restricts swelling effect and thus minimizes the enzyme accessibility to substrates.

Ju, Xiaohui; Grego, Courtnee; Zhang, Xiao

2013-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "oled integrated substrate" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Effects of substrate, phenological cutting stage, and auxin concentration on rooting of Cotinus obovatus Raf.  

E-Print Network [OSTI]

A study was conducted to determine the effects of substrate, phenological stage of cuttings and auxin concentrations on the rooting of Texas smoke tree (Cotinus obovatus Raf). Softwood, semi-hardwood and hardwood cuttings were treated with either a...

Denny, Geoffrey Carlile

2013-02-22T23:59:59.000Z

482

Adsorbates in a Box: Titration of Substrate Electronic States Zhihai Cheng,1  

E-Print Network [OSTI]

May 2010; published 6 August 2010) Nanoscale confinement of adsorbed CO molecules in an anthraquinone anthraquinone (AQ) network of sixfold symmetry (disregarding the substrate) exhibiting pores that expose 186

Einstein, Theodore L.

483

Influence of cleaning process on the laser-induced damage threshold of substrates  

SciTech Connect (OSTI)

The cleaning process of optical substrates plays an important role during the manufacture of high-power laser coatings. Two kinds of substrates, fused silica and BK7 glass, and two cleaning processes, called process 1 and process 2 having different surfactant solutions and different ultrasonic cleaning parameters, are adopted to compare the influence of the ultrasonic cleaning technique on the substrates. The evaluation standards of the cleaning results include contaminant-removal efficiency, weak absorption, and laser-induced damage threshold of the substrates. For both fused silica and BK7, process 2 is more efficient than process 1. Because acid and alkaline solutions can increase the roughness of BK7, process 2 is unsuitable for BK7 glass cleaning. The parameters of the cleaning protocol should be changed depending on the material of the optical components and the type of contamination.

Shen Zhengxiang; Ding Tao; Ye Xiaowen; Wang Xiaodong; Ma Bin; Cheng Xinbin; Liu Huasong; Ji Yiqin; Wang Zhanshan

2011-03-20T23:59:59.000Z

484

One-step synthesis and patterning of aligned polymer nanowires on a substrate  

DOE Patents [OSTI]

In a method of making a polymer structure on a substrate a layer of a first polymer, having a horizontal top surface, is applied to a surface of the substrate. An area of the top surface of the polymer is manipulated to create an uneven feature that is plasma etched to remove a first portion from the layer of the first polymer thereby leaving the polymer structure extending therefrom. A light emitting structure includes a conductive substrate from which an elongated nanostructure of a first polymer extends. A second polymer coating is disposed about the nanostructure and includes a second polymer, which includes a material such that a band gap exists between the second polymer coating and the elongated nanostructure. A conductive material coats the second polymer coating. The light emitting structure emits light when a voltage is applied between the conductive substrate and the conductive coating.

Wang Zhong L. (Marietta, GA); Wang, Xudong (Atlanta, GA); Morber, Jenny R. (Atlanta, GA); Liu, Jin (Danbury, CT)

2011-11-08T23:59:59.000Z

485

MSc Integrated Petroleum Geoscience Programme Handbook  

E-Print Network [OSTI]

MSc Integrated Petroleum Geoscience Programme Handbook 2013-14 edition #12;Page 2 Contents Preface 3 1.MSc Integrated Petroleum Geoscience ­ FAQ 4 1.1 Why should I do this programme? 4 1.2 What Integrated Petroleum Geoscience: 57F610B1 PgDip Integrated Petroleum Geoscience: 61F610VX PgCert Integrated

Levi, Ran

486

GaSb substrates with extended IR wavelength for advanced space based applications  

SciTech Connect (OSTI)

GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

2009-05-01T23:59:59.000Z

487

Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates  

DOE Patents [OSTI]

A process and composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenide sulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating.

Eser, Erten; Fields, Shannon

2012-05-01T23:59:59.000Z

488

Fabrication of optoelectronic microwave linear and ring resonators on a gallium arsenide substrate  

E-Print Network [OSTI]

FABRICATION OF OPTOELECTRONIC MICROWAVE LINEAR AND RING RESONATORS ON A GALLIUM ARSENIDE SUBSTRATE A Thesis by CHUN-LIANG YEH Submitted to the Office of Graduate Studies of Texas ASM University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE August 1993 Major Subject: Electrical Engineering FABRICATION OF OPTOELECTRONIC MICROWAVE LINEAR AND RING RESONATORS ON A GALLIUM ARSENIDE SUBSTRATE A Thesis by CHUN-LIANG YEH Approved as to style and content by: Mark...

Yeh, Chun-Liang

1993-01-01T23:59:59.000Z

489

Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition  

E-Print Network [OSTI]

1 Published as: Applied Physics Letters 100, 173113 (2012) DOI: 10.1063/1.4707376 Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition Bruno Dlubak, Piran R. Kidambi, Robert S... on monolayer graphene, without creating point defects. This enhanced wetting is achieved by greatly increasing the nucleation density through the use of polar traps induced on the graphene surface by an underlying metallic substrate. The resulting Al2O3...

Dlubak, Bruno; Kidambi, Piran R.; Weatherup, Robert S.; Hofmann, Stephan; Robertson, John

2012-04-26T23:59:59.000Z

490

Grand Challenges of Enterprise Integration  

SciTech Connect (OSTI)

Enterprise Integration connects and combines people, processes, systems, and technologies to ensure that the right people and the right processes have the right information and the right resources at the right time. A consensus roadmap for Technologies for Enterprise Integration was created as part of an industry/government/academia partnership in the Integrated Manufacturing Technology Initiative (IMTI). Two of the grand challenges identified by the roadmapping effort will be addressed here--Customer Responsive Enterprises and Totally Connected Enterprises. Each of these challenges is briefly discussed as to the current state of industry and the future vision as developed in the roadmap.

Brosey, W.D; Neal, R.E.; Marks, D.

2001-04-01T23:59:59.000Z

491

Superconductive tunnel junction integrated circuit  

SciTech Connect (OSTI)

Josephson Junction integrated circuits of the current injection type and magnetically controlled type utilize a superconductive layer that forms both Josephson Junction electrode for the Josephson Junction devices on the integrated circuit as well as a ground plane for the integrated circuit. Large area Josephson Junctions are utilized for effecting contact to lower superconductive layers and islands are formed in superconductive layers to provide isolation between the groundplane function and the Josephson Junction electrode function as well as to effect crossovers. A superconductor-barrier-superconductor trilayer patterned by local anodization is also utilized with additional layers formed thereover. Methods of manufacturing the embodiments of the invention are disclosed.

Jillie, D.W. Jr.; Smith, L.N.

1984-02-07T23:59:59.000Z

492

Process for selectively patterning epitaxial film growth on a semiconductor substrate  

DOE Patents [OSTI]

Disclosed is a process for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve the first layer a sufficient amount to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.

Sheldon, P.; Hayes, R.E.

1984-12-04T23:59:59.000Z

493

Process for selectively patterning epitaxial film growth on a semiconductor substrate  

DOE Patents [OSTI]

A process is disclosed for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve a sufficient amount of the first layer to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent to the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.

Sheldon, Peter (Golden, CO); Hayes, Russell E. (Boulder, CO)

1986-01-01T23:59:59.000Z

494

X-ray Characterisation of Zinc Oxide (ZnO) Single Crystal Substrates  

SciTech Connect (OSTI)

Single crystal substrates of low defect density are paramount for fully realizing the numerous applications of zinc oxide (ZnO) wide bandgap semiconductors. While ZnO substrates are commercially available from various vendors, very little information is available on the structural properties of these substrates. Therefore, an extensive evaluation of available substrates would serve as a basis for the development of ZnO based devices and technologies. In this study, bulk ZnO single crystal substrates grown by different growth techniques have been characterised using synchrotron white beam X-ray topography and high resolution X-ray diffraction. The substrates exhibit a wide range of dislocation densities from as high as 10{sup 6} cm{sup -2} down to less than 1000 cm{sup -2} depending on the growth technique employed. The authors evaluation reveals that ZnO crystals grown by the hydrothermal technique possess the best structural quality with dislocation densities of 800-1000 cm{sup -2} and rocking curves with a full width half maximum of less than 12 arc seconds.

Dhanaraj, G.; Raghothamachar, B; Dudley, M

2010-01-01T23:59:59.000Z

495

Method For Improving The Oxidation Resistance Of Metal Substrates Coated With Thermal Barrier Coatings  

DOE Patents [OSTI]

A method for providing a protective coating on a metal-based substrate is disclosed. The method involves the application of an aluminum-rich mixture to the substrate to form a discontinuous layer of aluminum-rich particles, followed by the application of a second coating over the discontinuous layer of aluminum-rich particles. Aluminum diffuses from the aluminum-rich layer into the substrate, and into any bond coat layer which is subsequently applied. Related articles are also described. A method for providing a protective coating on a metal-based substrate is disclosed. The method involves the application of an aluminum-rich mixture to the substrate to form a discontinuous layer of aluminum-rich particles, followed by the application of a second coating over the discontinuous layer of aluminum-rich particles. Aluminum diffuses from the aluminum-rich layer into the substrate, and into any bond coat layer which is subsequently applied. Related articles are also described.

Thompson, Anthony Mark (Niskayuna, NY); Gray, Dennis Michael (Delanson, NY); Jackson, Melvin Robert (Niskayuna, NY)

2003-05-13T23:59:59.000Z

496

Recognition of Nucleoside Monophosphate Substrates by Haemophilus influenzae Class C Acid Phosphatase  

SciTech Connect (OSTI)

The e (P4) phosphatase from Haemophilus influenzae functions in a vestigial NAD{sup +} utilization pathway by dephosphorylating nicotinamide mononucleotide to nicotinamide riboside. P4 is also the prototype of class C acid phosphatases (CCAPs), which are nonspecific 5{prime},3{prime}-nucleotidases localized to the bacterial outer membrane. To understand substrate recognition by P4 and other class C phosphatases, we have determined the crystal structures of a substrate-trapping mutant P4 enzyme complexed with nicotinamide mononucleotide, 5{prime}-AMP, 3{prime}-AMP, and 2{prime}-AMP. The structures reveal an anchor-shaped substrate-binding cavity comprising a conserved hydrophobic box that clamps the nucleotide base, a buried phosphoryl binding site, and three solvent-filled pockets that contact the ribose and the hydrogen-bonding edge of the base. The span between the hydrophobic box and the phosphoryl site is optimal for recognizing nucleoside monophosphates, explaining the general preference for this class of substrate. The base makes no hydrogen bonds with the enzyme, consistent with an observed lack of base specificity. Two solvent-filled pockets flanking the ribose are key to the dual recognition of 5{prime}-nucleotides and 3{prime}-nucleotides. These pockets minimize the enzyme's direct interactions with the ribose and provide sufficient space to accommodate 5{prime} substrates in an anti conformation and 3{prime} substrates in a syn conformation. Finally, the structures suggest that class B acid phosphatases and CCAPs share a common strategy for nucleotide recognition.

Singh, Harkewal; Schuermann, Jonathan P.; Reilly, Thomas J.; Calcutt, Michael J.; Tanner, John J. (Cornell); (UMC)

2010-12-08T23:59:59.000Z

497

Nine Crystal Structures Determine the Substrate Envelope of the MDR HIV-1 Protease  

SciTech Connect (OSTI)

Under drug selection pressure, emerging mutations render HIV-1 protease drug resistant, leading to the therapy failure in anti-HIV treatment. It is known that nine substrate cleavage site peptides bind to wild type (WT) HIV-1 protease in a conserved pattern. However, how the multidrug-resistant (MDR) HIV-1 protease binds to the substrate cleavage site peptides is yet to be determined. MDR769 HIV-1 protease (resistant mutations at residues 10, 36, 46, 54, 62, 63, 71, 82, 84, and 90) was selected for present study to understand the binding to its natural substrates. MDR769 HIV-1 protease was co-crystallized with nine substrate cleavage site hepta-peptides. Crystallographic studies show that MDR769 HIV-1 protease has an expanded substrate envelope with wide open flaps. Furthermore, ligand binding energy calculations indicate weaker binding in MDR769 HIV-1 protease-substrate complexes. These results help in designing the next generation of HIV-1 protease inhibitors by targeting the MDR HIV-1 protease.

Liu, Zhigang; Wang, Yong; Brunzelle, Joseph; Kovari, Iulia A.; Kovari, Ladislau C. (WSU-MED); (NWU)

2012-03-27T23:59:59.000Z

498

"DOE O 450.2 INTEGRATED SAFETY MANAGEMENT AND DOE P 450.4A INTEGRATED...  

Energy Savers [EERE]

"DOE O 450.2 INTEGRATED SAFETY MANAGEMENT AND DOE P 450.4A INTEGRATED SAFETY MANAGEMENT POLICY FAMILIAR LEVEL "DOE O 450.2 INTEGRATED SAFETY MANAGEMENT AND DOE P 450.4A INTEGRATED...

499

Numerical integration of variational equations  

E-Print Network [OSTI]

We present and compare different numerical schemes for the integration of the variational equations of autonomous Hamiltonian systems whose kinetic energy is quadratic in the generalized momenta and whose potential is a function of the generalized positions. We apply these techniques to Hamiltonian systems of various degrees of freedom, and investigate their efficiency in accurately reproducing well-known properties of chaos indicators like the Lyapunov Characteristic Exponents (LCEs) and the Generalized Alignment Indices (GALIs). We find that the best numerical performance is exhibited by the \\textit{`tangent map (TM) method'}, a scheme based on symplectic integration techniques which proves to be optimal in speed and accuracy. According to this method, a symplectic integrator is used to approximate the solution of the Hamilton's equations of motion by the repeated action of a symplectic map $S$, while the corresponding tangent map $TS$, is used for the integration of the variational equations. A simple and systematic technique to construct $TS$ is also presented.

Ch. Skokos; E. Gerlach

2010-09-29T23:59:59.000Z

500

Bryan, Hannegan, Energy Systems Integration  

Broader source: Energy.gov (indexed) [DOE]

cross m ul*ple p athways a nd s cales New A pproach E nergy Systems Integra.on 5 * Sensors and controls * Design and integration * Modeling and simulation * System...