National Library of Energy BETA

Sample records for observed switching mechanism

  1. Mechanical control of electroresistive switching (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Search Results Journal Article: Mechanical control of electroresistive switching Citation Details In-Document Search Title: Mechanical control of electroresistive ...

  2. Micro electro mechanical system optical switching

    DOE Patents [OSTI]

    Thorson, Kevin J; Stevens, Rick C; Kryzak, Charles J; Leininger, Brian S; Kornrumpf, William P; Forman, Glenn A; Iannotti, Joseph A; Spahn, Olga B; Cowan, William D; Dagel, Daryl J

    2013-12-17

    The present disclosure includes apparatus, system, and method embodiments that provide micro electo mechanical system optical switching and methods of manufacturing switches. For example, one optical switch embodiment includes at least one micro electro mechanical system type pivot mirror structure disposed along a path of an optical signal, the structure having a mirror and an actuator, and the mirror having a pivot axis along a first edge and having a second edge rotatable with respect to the pivot axis, the mirror being capable of and arranged to be actuated to pivot betweeen a position parallel to a plane of an optical signal and a position substantially normal to the plane of the optical signal.

  3. Nanoscale mechanical switching of ferroelectric polarization via flexoelectricity

    SciTech Connect (OSTI)

    Gu, Yijia; Hong, Zijian; Britson, Jason; Chen, Long-Qing

    2015-01-12

    Flexoelectric coefficient is a fourth-rank tensor arising from the coupling between strain gradient and electric polarization and thus exists in all crystals. It is generally ignored for macroscopic crystals due to its small magnitude. However, at the nanoscale, flexoelectric contributions may become significant and can potentially be utilized for device applications. Using the phase-field method, we study the mechanical switching of electric polarization in ferroelectric thin films by a strain gradient created via an atomic force microscope tip. Our simulation results show good agreement with existing experimental observations. We examine the competition between the piezoelectric and flexoelectric effects and provide an understanding of the role of flexoelectricity in the polarization switching. Also, by changing the pressure and film thickness, we reveal that the flexoelectric field at the film bottom can be used as a criterion to determine whether domain switching may happen under a mechanical force.

  4. Shuttle-promoted nano-mechanical current switch

    SciTech Connect (OSTI)

    Song, Taegeun Kiselev, Mikhail N.; Gorelik, Leonid Y.; Shekhter, Robert I.; Kikoin, Konstantin

    2015-09-21

    We investigate electron shuttling in three-terminal nanoelectromechanical device built on a movable metallic rod oscillating between two drains. The device shows a double-well shaped electromechanical potential tunable by a source-drain bias voltage. Four stationary regimes controllable by the bias are found for this device: (i) single stable fixed point, (ii) two stable fixed points, (iii) two limit cycles, and (iv) single limit cycle. In the presence of perpendicular magnetic field, the Lorentz force makes possible switching from one electromechanical state to another. The mechanism of tunable transitions between various stable regimes based on the interplay between voltage controlled electromechanical instability and magnetically controlled switching is suggested. The switching phenomenon is implemented for achieving both a reliable active current switch and sensoring of small variations of magnetic field.

  5. Hybrid plasmonic nanodevices: Switching mechanism for the nonlinear emission

    SciTech Connect (OSTI)

    Bragas, Andrea V.; Singh, Mahi R.

    2014-03-31

    Control of the light emission at the nanoscale is of central interest in nanophotonics due to the many applications in very different fields, ranging from quantum information to biophysics. Resonant excitation of surface plasmon polaritons in metal nanoparticles create nanostructured and enhanced light fields around those structures, which produce their strong interaction in a hybrid nanodevice with other plasmonic or non-plasmonic objects. This interaction may in turn also modulate the far field with important consequences in the applications. We show in this paper that the nonlinear emission from semiconductor quantum dots is strongly affected by the close presence of metal nanoparticles, which are resonantly excited. Using a pulsed laser, optical second harmonic is generated in the quantum dot, and it is highly enhanced when the laser is tuned around the nanoparticle plasmon resonance. Even more interesting is the demonstration of a switching mechanism, controlled by an external continuous-wave field, which can enhance or extinguish the SH signal, even when the pulsed laser is always on. Experimental observations are in excellent agreement with the theoretical calculations, based on the dipole-dipole near-field coupling of the objects forming the hybrid system.

  6. Photo-induced micro-mechanical optical switch

    DOE Patents [OSTI]

    Rajic, Slobodan; Datskos, Panagiotis George; Egert, Charles M.

    2002-01-01

    An optical switch is formed by introducing light lengthwise to a microcantilever waveguide directed toward a second waveguide. The microcantilever is caused to bend by light emitted from a laser diode orthogonal to the microcantilever and at an energy above the band gap, which induces stress as a result of the generation of free carriers. The bending of the waveguide directs the carrier frequency light to a second receptor waveguide or to a non-responsive surface. The switch may be combined in an array to perform multiple switching functions rapidly and at low energy losses.

  7. Electro-mechanical heat switch for cryogenic applications

    DOE Patents [OSTI]

    van den Berg, Marcel L.; Batteux, Jan D.; Labov, Simon E.

    2003-01-01

    A heat switch includes two symmetric jaws. Each jaw is comprised of a link connected at a translatable joint to a flexible arm. Each arm rotates about a fixed pivot, and has an articulated end including a thermal contact pad connected to a heat sink. The links are joined together at a translatable main joint. To close the heat switch, a closing solenoid is actuated and forces the main joint to an over-center position. This movement rotates the arms about their pivots, respectively, forces each of them into a stressed configuration, and forces the thermal contact pads towards each other and into compressive contact with a cold finger. The closing solenoid is then deactivated. The heat switch remains closed due to a restoring force generated by the stressed configuration of each arm, until actuation of an opening solenoid returns the main joint to its starting open-switch position.

  8. Insight into the molecular switch mechanism of human Rab5a from molecular dynamics simulations

    SciTech Connect (OSTI)

    Wang, Jing-Fang; Shanghai Center for Bioinformation Technology, 100 Qinzhou Road, Shanghai 200235; Gordon Life Science Institute, 13784 Torrey Del Mar Drive, San Diego, CA 92130 ; Chou, Kuo-Chen

    2009-12-18

    Rab5a is currently a most interesting target because it is responsible for regulating the early endosome fusion in endocytosis and possibly the budding process. We utilized longtime-scale molecular dynamics simulations to investigate the internal motion of the wild-type Rab5a and its A30P mutant. It was observed that, after binding with GTP, the global flexibility of the two proteins is increasing, while the local flexibility in their sensitive sites (P-loop, switch I and II regions) is decreasing. Also, the mutation of Ala30 to Pro30 can cause notable flexibility variations in the sensitive sites. However, this kind of variations is dramatically reduced after binding with GTP. Such a remarkable feature is mainly caused by the water network rearrangements in the sensitive sites. These findings might be of use for revealing the profound mechanism of the displacements of Rab5a switch regions, as well as the mechanism of the GDP dissociation and GTP association.

  9. Switch Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Switch Switch Run end at 6pm at 6pm at 6am 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Wed Thu Fri Sat Sun Mon Tue Wed Thu Fri Sat Sun Mon Tue ...

  10. Photovoltaic switching mechanism in lateral structure hybrid perovskite solar cells

    SciTech Connect (OSTI)

    Yuan, Yongbo; Chae, Jungseok; Shao, Yuchuan; Wang, Qi; Xiao, Zhengguo; Centrone, Andrea; Huang, Jinsong

    2015-06-05

    In this study, long range electromigration of methylammonium ions (MA+) in methyl ammonium lead tri-iodide (MAPbI3) film is observed directly using the photo­thermal induced resonance technique. The electromigration of MA+ leads to the formation of a lateral p-i-n structure, which is the origin of the switchable photovoltaic effect in MAPbI3 perovskite devices.

  11. Photovoltaic switching mechanism in lateral structure hybrid perovskite solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yuan, Yongbo; Chae, Jungseok; Shao, Yuchuan; Wang, Qi; Xiao, Zhengguo; Centrone, Andrea; Huang, Jinsong

    2015-06-05

    In this study, long range electromigration of methylammonium ions (MA+) in methyl ammonium lead tri-iodide (MAPbI3) film is observed directly using the photo­thermal induced resonance technique. The electromigration of MA+ leads to the formation of a lateral p-i-n structure, which is the origin of the switchable photovoltaic effect in MAPbI3 perovskite devices.

  12. Quantum mechanics problems in observer's mathematics

    SciTech Connect (OSTI)

    Khots, Boris; Khots, Dmitriy

    2012-11-06

    This work considers the ontology, guiding equation, Schrodinger's equation, relation to the Born Rule, the conditional wave function of a subsystem in a setting of arithmetic, algebra and topology provided by Observer's Mathematics (see www.mathrelativity.com). Observer's Mathematics creates new arithmetic, algebra, geometry, topology, analysis and logic which do not contain the concept of continuum, but locally coincide with the standard fields. Certain results and communications pertaining to solutions of these problems are provided. In particular, we prove the following theorems: Theorem I (Two-slit interference). Let {Psi}{sub 1} be a wave from slit 1, {Psi}{sub 2} - from slit 2, and {Psi} = {Psi}{sub 1}+{Psi}{sub 2}. Then the probability of {Psi} being a wave equals to 0.5. Theorem II (k-bodies solution). For W{sub n} from m-observer point of view with m>log{sub 10}((2 Multiplication-Sign 10{sup 2n}-1){sup 2k}+1), the probability of standard expression of Hamiltonian variation is less than 1 and depends on n,m,k.

  13. Molecular-Mechanical Switching at the Nanoparticle-Solvent Interface: Practice and Theory

    SciTech Connect (OSTI)

    Coskun, Ali; Wesson, Paul J.; Klajn, Rafal; Trabolsi, Ali; Fang, Lei; Olson, Mark A.; Dey, Sanjeev K.; Grzybowski, Bartosz A.; Stoddart, J. Fraser

    2010-01-01

    A range (Au, Pt, Pd) of metal nanoparticles (MNPs) has been prepared and functionalized with (a) redox-active stalks containing tetrathiafulvalene (TTF) units, (b) [2]pseudorotaxanes formed between these stalks and cyclobis(paraquat-p-phenylene) (CBPQT4+) rings, and (c) bistable [2]rotaxane molecules where the dumbbell component contains a 1,5-dioxynaphthalene (DNP) unit, as well as a TTF unit, encircled by a CBPQT4+ ring. It transpires that the molecules present in (a) and (c) and the supermolecules described in (b) retain their switching characteristics, previously observed in solution, when they are immobilized onto MNPs. Moreover, their oxidation potentials depend on the fraction, ?, of the molecules or supermolecules on the surface of the nanoparticles. A variation in ? affects the oxidation potentials of the TTF units to the extent that switching can be subjected to fine tuning as a result. Specifically, increasing ? results in positive shifts (i) in the oxidation potentials of the TTF unit in (a)-(c) and (ii) the reduction potentials of the CBPQT4+ rings in (c). These shifts can be attributed to an increase in the electrostatic potential surrounding the MNPs. Both the magnitude and the direction of these shifts are reproduced by a model, based on the Poisson-Boltzmann equation coupled with charge-regulating boundary conditions. Furthermore, the kinetics of relaxation from the metastable state coconformation (MSCC) to the ground-state coconformation (GSCC) of the bistable [2]rotaxane molecules also depends on ?, as well as on the nanoparticle diameter. Increasing either of these parameters accelerates the rate of relaxation from the MSCC to the GSCC. This rate is a function of (i) the activation energy for the relaxation process associated with the bistable [2]rotaxane molecules in solution and (ii) the electrostatic potential surrounding the MNPs. The electrostatic potential depends on (i) the diameter of the MNPs, (ii) the

  14. Latching micro optical switch

    DOE Patents [OSTI]

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  15. Advanced Soft Switching Inverter for Reducing Switching and Power Losses |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Advanced Soft Switching Inverter for Reducing Switching and Power Losses Advanced Soft Switching Inverter for Reducing Switching and Power Losses 2010 DOE Vehicle Technologies and Hydrogen Programs Annual Merit Review and Peer Evaluation Meeting, June 7-11, 2010 -- Washington D.C. ape011_lai_2010_o.pdf (4.46 MB) More Documents & Publications Advanced Soft Switching Inverter for Reducing Switching and Power Losses Electro-thermal-mechanical Simulation and Reliability

  16. Switch wear leveling

    DOE Patents [OSTI]

    Wu, Hunter; Sealy, Kylee; Gilchrist, Aaron

    2015-09-01

    An apparatus for switch wear leveling includes a switching module that controls switching for two or more pairs of switches in a switching power converter. The switching module controls switches based on a duty cycle control technique and closes and opens each switch in a switching sequence. The pairs of switches connect to a positive and negative terminal of a DC voltage source. For a first switching sequence a first switch of a pair of switches has a higher switching power loss than a second switch of the pair of switches. The apparatus includes a switch rotation module that changes the switching sequence of the two or more pairs of switches from the first switching sequence to a second switching sequence. The second switch of a pair of switches has a higher switching power loss than the first switch of the pair of switches during the second switching sequence.

  17. Optical Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    seven wonders / optical switch Optical Switch A key component in the laser chain, an optical switch called a plasma electrode Pockels cell (PEPC), was invented and developed at LLNL. A Pockels cell rotates the polarization of a laser beam when a voltage is applied across an electro-optic crystal. Depending on the voltage applied, the Pockels cell either allows light to pass through or to reflect off a polarizer, creating an optical switch. For each of NIF's 192 beamlines, a PEPC allows the laser

  18. Optical switches and switching methods

    DOE Patents [OSTI]

    Doty, Michael

    2008-03-04

    A device and method for collecting subject responses, particularly during magnetic imaging experiments and testing using a method such as functional MRI. The device comprises a non-metallic input device which is coupled via fiber optic cables to a computer or other data collection device. One or more optical switches transmit the subject's responses. The input device keeps the subject's fingers comfortably aligned with the switches by partially immobilizing the forearm, wrist, and/or hand of the subject. Also a robust nonmetallic switch, particularly for use with the input device and methods for optical switching.

  19. Nanomechanical switch for integration with CMOS logic.

    SciTech Connect (OSTI)

    Nordquist, Christopher Daniel; Wolfley, Steven L.; Baker, Michael Sean; Czaplewski, David A.; Wendt, Joel Robert; Kraus, Garth Merlin; de Boer, Maarten Pieter; Patrizi, Gary A.

    2008-11-01

    We designed, fabricated and measured the performance of nanoelectromechanical (NEMS) switches. Initial data are reported with one of the switch designs having a measured switching time of 400 ns and an operating voltage of 5 V. The switches operated laterally with unmeasurable leakage current in the 'off' state. Surface micromachining techniques were used to fabricate the switches. All processing was CMOS compatible. A single metal layer, defined by a single mask step, was used as the mechanical switch layer. The details of the modeling, fabrication and testing of the NEMS switches are reported.

  20. ION SWITCH

    DOE Patents [OSTI]

    Cook, B.

    1959-02-10

    An ion switch capable of transferring large magnitudes of power is described. An ion switch constructed in accordance with the invention includes a pair of spaced control electrodes disposed in a highly evacuated region for connection in a conventional circuit to control the passing of power therethrough. A controllable ionic conduction path is provided directiy between the control electrodes by a source unit to close the ion switch. Conventional power supply means are provided to trigger the source unit and control the magnitude, durations and pulse repetition rate of the aforementioned ionic conduction path.

  1. Acceleration switch

    DOE Patents [OSTI]

    Abbin, J.P. Jr.; Devaney, H.F.; Hake, L.W.

    1979-08-29

    The disclosure relates to an improved integrating acceleration switch of the type having a mass suspended within a fluid filled chamber, with the motion of the mass initially opposed by a spring and subsequently not so opposed.

  2. Acceleration switch

    DOE Patents [OSTI]

    Abbin, Jr., Joseph P.; Devaney, Howard F.; Hake, Lewis W.

    1982-08-17

    The disclosure relates to an improved integrating acceleration switch of the type having a mass suspended within a fluid filled chamber, with the motion of the mass initially opposed by a spring and subsequently not so opposed.

  3. Acceleration switch

    DOE Patents [OSTI]

    Abbin, J.P. Jr.; Middleton, J.N.; Schildknecht, H.E.

    1979-08-20

    An improved acceleration switch is described which is of the type having a mass suspended within a chamber, having little fluid damping at low g levels and high fluid damping at high g levels.

  4. Acceleration switch

    DOE Patents [OSTI]

    Abbin, Jr., Joseph P.; Middleton, John N.; Schildknecht, Harold E.

    1981-01-01

    The disclosure relates to an improved acceleration switch, of the type having a mass suspended within a chamber, having little fluid damping at low g levels and high fluid damping at high g levels.

  5. Optical switch

    DOE Patents [OSTI]

    Reedy, Robert P.

    1987-01-01

    An optical switching device (10) is provided whereby light from a first glass fiber (16) or a second glass fiber (14) may be selectively transmitted into a third glass fiber (18). Each glass fiber is provided with a focusing and collimating lens system (26, 28, 30). In one mode of operation, light from the first glass fiber (16) is reflected by a planar mirror (36) into the third glass fiber (18). In another mode of operation, light from the second glass fiber (14) passes directly into the third glass fiber (18). The planar mirror (36) is attached to a rotatable table (32) which is rotated to provide the optical switching.

  6. Optical switch

    DOE Patents [OSTI]

    Reedy, R.P.

    1987-11-10

    An optical switching device is provided whereby light from a first glass fiber or a second glass fiber may be selectively transmitted into a third glass fiber. Each glass fiber is provided with a focusing and collimating lens system. In one mode of operation, light from the first glass fiber is reflected by a planar mirror into the third glass fiber. In another mode of operation, light from the second glass fiber passes directly into the third glass fiber. The planar mirror is attached to a rotatable table which is rotated to provide the optical switching. 3 figs.

  7. Percolation mechanism through trapping/de-trapping process at defect states for resistive switching devices with structure of Ag/Si{sub x}C{sub 1?x}/p-Si

    SciTech Connect (OSTI)

    Liu, Yanhong; Gao, Ping; Li, La; Peng, Wei [School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024 (China); Jiang, Xuening; Zhang, Jialiang [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024 (China)

    2014-08-14

    Pure Si{sub x}C{sub 1?x} (x?>?0.5) and B-containing Si{sub x}C{sub 1?x} (x?>?0.5) based resistive switching devices (RSD) with the structure of Ag/Si{sub x}C{sub 1?x}/p-Si were fabricated and their switching characteristics and mechanism were investigated systematically. Percolation mechanism through trapping/ de-trapping at defect states was suggested for the switching process. Through the introduction of B atoms into Si{sub x}C{sub 1?x}, the density of defect states was reduced, then, the SET and RESET voltages were also decreased. Based on the percolation theory, the dependence of SET/RESET voltage on the density of defect states was analyzed. These results supply a deep understanding for the SiC-based RSD, which have a potential application in extreme ambient conditions.

  8. What is behind small deviations of quantum mechanics theory from experiments? Observer's mathematics point of view

    SciTech Connect (OSTI)

    Khots, Boris; Khots, Dmitriy

    2014-12-10

    Certain results that have been predicted by Quantum Mechanics (QM) theory are not always supported by experiments. This defines a deep crisis in contemporary physics and, in particular, quantum mechanics. We believe that, in fact, the mathematical apparatus employed within today's physics is a possible reason. In particular, we consider the concept of infinity that exists in today's mathematics as the root cause of this problem. We have created Observer's Mathematics that offers an alternative to contemporary mathematics. This paper is an attempt to relay how Observer's Mathematics may explain some of the contradictions in QM theory results. We consider the Hamiltonian Mechanics, Newton equation, Schrodinger equation, two slit interference, wave-particle duality for single photons, uncertainty principle, Dirac equations for free electron in a setting of arithmetic, algebra, and topology provided by Observer's Mathematics (see www.mathrelativity.com). Certain results and communications pertaining to solution of these problems are provided.

  9. Optical fiber switch

    DOE Patents [OSTI]

    Early, James W.; Lester, Charles S.

    2002-01-01

    Optical fiber switches operated by electrical activation of at least one laser light modulator through which laser light is directed into at least one polarizer are used for the sequential transport of laser light from a single laser into a plurality of optical fibers. In one embodiment of the invention, laser light from a single excitation laser is sequentially transported to a plurality of optical fibers which in turn transport the laser light to separate individual remotely located laser fuel ignitors. The invention can be operated electro-optically with no need for any mechanical or moving parts, or, alternatively, can be operated electro-mechanically. The invention can be used to switch either pulsed or continuous wave laser light.

  10. Advanced Soft Switching Inverter for Reducing Switching and Power...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Advanced Soft Switching Inverter for Reducing Switching and Power Losses Advanced Soft Switching Inverter for Reducing Switching and Power Losses 2010 DOE Vehicle Technologies and ...

  11. Advanced Soft Switching Inverter for Reducing Switching and Power...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Soft Switching Inverter for Reducing Switching and Power Losses Advanced Soft Switching Inverter for Reducing Switching and Power Losses 2009 DOE Hydrogen Program and Vehicle ...

  12. THYRATRON SWITCH

    DOE Patents [OSTI]

    Creveling, R.; Bourgeois, N.A. Jr.

    1959-04-21

    An arrangement for utilizing a thyratron as a noise free switch is described. It has been discovered that the voltage between plate and cathode of a thyratron will oscillate, producing voltage spikes, if the tube carries only a fraction of its maximum rated current. These voltage spikes can produce detrimental effects where the thyratron is used in critical timing circuits. To alleviate this problem the disclosed circuit provides a charged capacitor and a resistor in parallel with the tube and of such value that the maximum current will flow from the capacitor through the thyratron when it is triggered. During this time the signal current is conducted through the tube, before the thyratron voltage starts to oscillate, and the signal current output is free of noise spikes.

  13. Latching relay switch assembly

    DOE Patents [OSTI]

    Duimstra, Frederick A.

    1991-01-01

    A latching relay switch assembly which includes a coil section and a switch or contact section. The coil section includes at least one permanent magnet and at least one electromagnet. The respective sections are, generally, arranged in separate locations or cavities in the assembly. The switch is latched by a permanent magnet assembly and selectively switched by an overriding electromagnetic assembly.

  14. Radiation hard vacuum switch

    DOE Patents [OSTI]

    Boettcher, Gordon E.

    1990-03-06

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  15. Radiation hard vacuum switch

    DOE Patents [OSTI]

    Boettcher, Gordon E.

    1990-01-01

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  16. Observation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Velocity-Independent Electron Transport in the Reversed Field Pinch R. O'Connell, * D. J. Den Hartog, C. B. Forest, J. K. Anderson, T. M. Biewer, † B. E. Chapman, D. Craig, G. Fiksel, S. C. Prager, J. S. Sarff, and S. D. Terry ‡ Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA R.W. Harvey CompX, San Diego, California, USA (Received 16 December 2002; published 24 July 2003) Confinement of runaway electrons has been observed for the first time in a reversed

  17. Observations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Observations of Multiple Magnetic Islands in the Core of a Reversed Field Pinch P. Franz, 1,2 L. Marrelli, 1,2 P. Piovesan, 1,2 B. E. Chapman, 3 P. Martin, 1,2 I. Predebon, 1,2 G. Spizzo, 1 R. B. White, 4 and C. Xiao 3,5 1 Consorzio RFX, Associazione EURATOM-ENEA sulla Fusione, Corso Stati Uniti, 4 35127 Padova, Italy * 2 Istituto Nazionale di Fisica della Materia, UdR Padova, Italy 3 Department of Physics, University of Wisconsin-Madison, 1150 University Avenue, Madison, Wisconsin 53706, USA 4

  18. Remote switch actuator

    DOE Patents [OSTI]

    Haas, Edwin Gerard; Beauman, Ronald; Palo, Jr., Stefan

    2013-01-29

    The invention provides a device and method for actuating electrical switches remotely. The device is removably attached to the switch and is actuated through the transfer of a user's force. The user is able to remain physically removed from the switch site obviating need for protective equipment. The device and method allow rapid, safe actuation of high-voltage or high-current carrying electrical switches or circuit breakers.

  19. Triggered plasma opening switch

    DOE Patents [OSTI]

    Mendel, Clifford W.

    1988-01-01

    A triggerable opening switch for a very high voltage and current pulse includes a transmission line extending from a source to a load and having an intermediate switch section including a plasma for conducting electrons between transmission line conductors and a magnetic field for breaking the plasma conduction path and magnetically insulating the electrons when it is desired to open the switch.

  20. REMOTE CONTROLLED SWITCHING DEVICE

    DOE Patents [OSTI]

    Hobbs, J.C.

    1959-02-01

    An electrical switching device which can be remotely controlled and in which one or more switches may be accurately operated at predetermined times or with predetermined intervening time intervals is described. The switching device consists essentially of a deck, a post projecting from the deck at right angles thereto, cam means mounted for rotation around said posts and a switch connected to said deck and actuated by said cam means. Means is provided for rotating the cam means at a constant speed and the switching apparatus is enclosed in a sealed container with external adjusting means and electrical connection elements.

  1. Resistive switching characteristics of polycrystalline SrTiO{sub 3} films

    SciTech Connect (OSTI)

    Jong Choi, Hyung; Won Park, Suk; Deok Han, Gwon; Hyung Shim, Joon; Na, Junhong; Kim, Gyu-Tae

    2014-06-16

    Strontium titanate (STO) thin films 90?nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800?C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (10{sup 8}10{sup 9}) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.

  2. Symmetry breaking and electrical frustration during tip-induced polarization switching in the non-polar cut of lithium niobate single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ievlev, Anton; Alikin, Denis O.; Morozovska, A. N.; Varenyk, O. V.; Eliseev, E. A.; Kholkin, Andrei; Shur, Vladimir Ya.; Kalinin, Sergei V.

    2014-12-15

    Polarization switching in ferroelectric materials is governed by a delicate interplay between bulk polarization dynamics and screening processes at surfaces and domain walls. Here we explore the mechanism of tip-induced polarization switching in the non-polar cuts of uniaxial ferroelectrics. In this case, in-plane component of polarization vector switches, allowing for detailed observations of resultant domain morphologies. We observe surprising variability of resultant domain morphologies stemming from fundamental instability of formed charged domain wall and associated electric frustration. In particular, we demonstrate that controlling vertical tip position allows the polarity of the switching to be controlled. This represents very unusual formmore » of symmetry breaking where mechanical motion in vertical direction controls the lateral domain growth. The implication of these studies for ferroelectric devices and domain wall electronics are discussed.« less

  3. Symmetry breaking and electrical frustration during tip-induced polarization switching in the non-polar cut of lithium niobate single crystals

    SciTech Connect (OSTI)

    Ievlev, Anton; Alikin, Denis O; Morozovska, A. N.; Varenyk, O. V.; Eliseev, E. A.; Kholkin, Andrei; Shur, Vladimir Ya.; Kalinin, Sergei V

    2015-01-01

    Polarization switching in ferroelectric materials is governed by a delicate interplay between bulk polarization dynamics and screening processes at surfaces and domain walls. Here we explore the mechanism of tip-induced polarization switching in the non-polar cuts of uniaxial ferroelectrics. In this case, in-plane component of polarization vector switches, allowing for detailed observations of resultant domain morphologies. We observe surprising variability of resultant domain morphologies stemming from fundamental instability of formed charged domain wall and associated electric frustration. In particular, we demonstrate that controlling vertical tip position allows the polarity of the switching to be controlled. This represents very unusual form of symmetry breaking where mechanical motion in vertical direction controls the lateral domain growth. The implication of these studies for ferroelectric devices and domain wall electronics are discussed.

  4. Effective switching frequency multiplier inverter

    DOE Patents [OSTI]

    Su, Gui-Jia (Oak Ridge, TN); Peng, Fang Z. (Okemos, MI)

    2007-08-07

    A switching frequency multiplier inverter for low inductance machines that uses parallel connection of switches and each switch is independently controlled according to a pulse width modulation scheme. The effective switching frequency is multiplied by the number of switches connected in parallel while each individual switch operates within its limit of switching frequency. This technique can also be used for other power converters such as DC/DC, AC/DC converters.

  5. Thermally actuated thermionic switch

    DOE Patents [OSTI]

    Barrus, Donald M.; Shires, Charles D.

    1988-01-01

    A thermally actuated thermionic switch which responds to an increase of temperature by changing from a high impedance to a low impedance at a predictable temperature set point. The switch has a bistable operation mode switching only on temperature increases. The thermionic material may be a metal which is liquid at the desired operation temperature and held in matrix in a graphite block reservoir, and which changes state (ionizes, for example) so as to be electrically conductive at a desired temperature.

  6. Solid state switch

    DOE Patents [OSTI]

    Merritt, Bernard T.; Dreifuerst, Gary R.

    1994-01-01

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1500 A peak, 1.0 .mu.s pulsewidth, and 4500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry.

  7. Thermally actuated thermionic switch

    DOE Patents [OSTI]

    Barrus, D.M.; Shires, C.D.

    1982-09-30

    A thermally actuated thermionic switch which responds to an increase of temperature by changing from a high impedance to a low impedance at a predictable temperature set point. The switch has a bistable operation mode switching only on temperature increases. The thermionic material may be a metal which is liquid at the desired operation temperature and held in matrix in a graphite block reservoir, and which changes state (ionizes, for example) so as to be electrically conductive at a desired temperature.

  8. Alarm toe switch

    DOE Patents [OSTI]

    Ganyard, Floyd P.

    1982-01-01

    An alarm toe switch inserted within a shoe for energizing an alarm circuit n a covert manner includes an insole mounting pad into which a miniature reed switch is fixedly molded. An elongated slot perpendicular to the reed switch is formed in the bottom surface of the mounting pad. A permanent cylindrical magnet positioned in the forward portion of the slot with a diameter greater than the pad thickness causes a bump above the pad. A foam rubber block is also positioned in the slot rearwardly of the magnet and holds the magnet in normal inoperative relation. A non-magnetic support plate covers the slot and holds the magnet and foam rubber in the slot. The plate minimizes bending and frictional forces to improve movement of the magnet for reliable switch activation. The bump occupies the knuckle space beneath the big toe. When the big toe is scrunched rearwardly the magnet is moved within the slot relative to the reed switch, thus magnetically activating the switch. When toe pressure is released the foam rubber block forces the magnet back into normal inoperative position to deactivate the reed switch. The reed switch is hermetically sealed with the magnet acting through the wall so the switch assembly S is capable of reliable operation even in wet and corrosive environments.

  9. Reusable fast opening switch

    DOE Patents [OSTI]

    Van Devender, John P. (Albuquerque, NM); Emin, David (Albuquerque, NM)

    1986-01-01

    A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and insulating states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

  10. Reusable fast opening switch

    DOE Patents [OSTI]

    Van Devender, J.P.; Emin, D.

    1983-12-21

    A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and metallic states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

  11. Direct observation of mineral–organic composite formation reveals occlusion mechanism

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cho, Kang Rae; Kim, Yi -Yeoun; Yang, Pengcheng; Cai, Wei; Pan, Haihua; Kulak, Alexander N.; Lau, Jolene L.; Kulshreshtha, Prashant; Armes, Steven P.; Meldrum, Fiona C.; et al

    2016-01-06

    Manipulation of inorganic materials with organic macromolecules enables organisms to create biominerals such as bones and seashells, where occlusion of biomacromolecules within individual crystals generates superior mechanical properties. Current understanding of this process largely comes from studying the entrapment of micron-size particles in cooling melts. Here, by investigating micelle incorporation in calcite with atomic force microscopy and micromechanical simulations, we show that different mechanisms govern nanoscale occlusion. By simultaneously visualizing the micelles and propagating step edges, we demonstrate that the micelles experience significant compression during occlusion, which is accompanied by cavity formation. This generates local lattice strain, leading to enhancedmore » mechanical properties. Furthermore, these results give new insight into the formation of occlusions in natural and synthetic crystals, and will facilitate the synthesis of multifunctional nanocomposite crystals.« less

  12. Magnetoelectric switching of perpendicular exchange bias in Pt/Co/?-Cr{sub 2}O{sub 3}/Pt stacked films

    SciTech Connect (OSTI)

    Toyoki, Kentaro; Shiratsuchi, Yu Kobane, Atsushi; Nakatani, Ryoichi; Mitsumata, Chiharu; Kotani, Yoshinori; Nakamura, Tetsuya

    2015-04-20

    We report the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/?-Cr{sub 2}O{sub 3}/Pt stacked films. The perpendicular exchange bias was switched isothermally by the simultaneous application of magnetic and electric fields. The threshold electric field required to switch the perpendicular exchange bias was found to be inversely proportional to the magnetic field, which confirmed the magnetoelectric mechanism of the process. The observed temperature dependence of the threshold electric field suggested that the energy barrier of the antiferromagnetic spin reversal was significantly lower than that assuming the coherent rotation. Pulse voltage measurements indicated that the antiferromagnetic domain propagation dominates the switching process. These results suggest an analogy of the electric-field-induced magnetization with a simple ferromagnet.

  13. Single-crystalline monolayer and multilayer graphene nano switches

    SciTech Connect (OSTI)

    Li, Peng; Cui, Tianhong; Jing, Gaoshan; Zhang, Bo; Sando, Shota

    2014-03-17

    Growth of monolayer, bi-layer, and tri-layer single-crystalline graphene (SCG) using chemical vapor deposition method is reported. SCG's mechanical properties and single-crystalline nature were characterized and verified by atomic force microscope and Raman spectroscopy. Electro-mechanical switches based on mono- and bi-layer SCG were fabricated, and the superb properties of SCG enable the switches to operate at pull-in voltage as low as 1 V, and high switching speed about 100 ns. These devices exhibit lifetime without a breakdown of over 5000 cycles, far more durable than any other graphene nanoelectromechanical system switches reported.

  14. Manually operated coded switch

    DOE Patents [OSTI]

    Barnette, Jon H.

    1978-01-01

    The disclosure relates to a manually operated recodable coded switch in which a code may be inserted, tried and used to actuate a lever controlling an external device. After attempting a code, the switch's code wheels must be returned to their zero positions before another try is made.

  15. Reflective HTS switch

    DOE Patents [OSTI]

    Martens, Jon S.; Hietala, Vincent M.; Hohenwarter, Gert K. G.

    1994-01-01

    A HTS switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time.

  16. Reflective HTS switch

    DOE Patents [OSTI]

    Martens, J.S.; Hietala, V.M.; Hohenwarter, G.K.G.

    1994-09-27

    A HTS (High Temperature Superconductor) switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time. 6 figs.

  17. Mechanisms and observations of coronal dimming for the 201 August 7 event

    SciTech Connect (OSTI)

    Mason, James Paul; Woods, T. N.; Caspi, A.; Thompson, B. J.; Hock, R. A.

    2014-07-01

    Coronal dimming of extreme ultraviolet (EUV) emission has the potential to be a useful forecaster of coronal mass ejections (CMEs). As emitting material leaves the corona, a temporary void is left behind which can be observed in spectral images and irradiance measurements. The velocity and mass of the CMEs should impact the character of those observations. However, other physical processes can confuse the observations. We describe these processes and the expected observational signature, with special emphasis placed on the differences. We then apply this understanding to a coronal dimming event with an associated CME that occurred on 2010 August 7. Data from the Solar Dynamics Observatory's Atmospheric Imaging Assembly and EUV Variability Experiment (EVE) are used for observations of the dimming, while the Solar and Heliospheric Observatory's Large Angle and Spectrometric Coronagraph and the Solar Terrestrial Relations Observatory's COR1 and COR2 are used to obtain velocity and mass estimates for the associated CME. We develop a technique for mitigating temperature effects in coronal dimming from full-disk irradiance measurements taken by EVE. We find that for this event, nearly 100% of the dimming is due to mass loss in the corona.

  18. Advanced Soft Switching Inverter for Reducing Switching and Power...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Advanced Soft Switching Inverter for Reducing Switching and Power Losses Jason Lai Virginia Polytechnic Institute and State University June 10, 2010 This presentation does not ...

  19. Erected mirror optical switch

    DOE Patents [OSTI]

    Allen, James J.

    2005-06-07

    A microelectromechanical (MEM) optical switching apparatus is disclosed that is based on an erectable mirror which is formed on a rotatable stage using surface micromachining. An electrostatic actuator is also formed on the substrate to rotate the stage and mirror with a high angular precision. The mirror can be erected manually after fabrication of the device and used to redirect an incident light beam at an arbitrary angel and to maintain this state in the absence of any applied electrical power. A 1.times.N optical switch can be formed using a single rotatable mirror. In some embodiments of the present invention, a plurality of rotatable mirrors can be configured so that the stages and mirrors rotate in unison when driven by a single micromotor thereby forming a 2.times.2 optical switch which can be used to switch a pair of incident light beams, or as a building block to form a higher-order optical switch.

  20. Abnormal bipolar resistive switching behavior in a Pt/GaO{sub 1.3}/Pt structure

    SciTech Connect (OSTI)

    Guo, D. Y.; Wu, Z. P.; Zhang, L. J.; Yang, T.; Hu, Q. R.; Lei, M.; Tang, W. H. E-mail: pgli@zstu.edu.cn; Li, P. G. E-mail: pgli@zstu.edu.cn; Li, L. H.

    2015-07-20

    A stable and repeatable abnormal bipolar resistive switching behavior was observed in a Pt/GaO{sub 1.3}/Pt sandwich structure without an electroforming process. The low resistance state (LRS) and the high resistance state (HRS) of the device can be distinguished clearly and be switched reversibly under a train of the voltage pulses. The LRS exhibits a conduction of electron tunneling, while the HRS shows a conduction of Schottky-type. The observed phenomena are considered to be related to the migration of oxygen vacancies which changes the space charge region width of the metal/semiconductor interface and results in a different electron transport mechanism.

  1. Generation mechanism of the slowly drifting narrowband structure in the type IV solar radio bursts observed by AMATERAS

    SciTech Connect (OSTI)

    Katoh, Y.; Nishimura, Y.; Kumamoto, A.; Ono, T.; Iwai, K.; Misawa, H.; Tsuchiya, F.

    2014-05-20

    We investigate the type IV burst event observed by AMATERAS on 2011 June 7, and reveal that the main component of the burst was emitted from the plasmoid eruption identified in the EUV images of the Solar Dynamics Observatory (SDO)/AIA. We show that a slowly drifting narrowband structure (SDNS) appeared in the burst's spectra. Using statistical analysis, we reveal that the SDNS appeared for a duration of tens to hundreds of milliseconds and had a typical bandwidth of 3 MHz. To explain the mechanism generating the SDNS, we propose wave-wave coupling between Langmuir waves and whistler-mode chorus emissions generated in a post-flare loop, which were inferred from the similarities in the plasma environments of a post-flare loop and the equatorial region of Earth's inner magnetosphere. We assume that a chorus element with a rising tone is generated at the top of a post-flare loop. Using the magnetic field and plasma density models, we quantitatively estimate the expected duration of radio emissions generated from coupling between Langmuir waves and chorus emissions during their propagation in the post-flare loop, and we find that the observed duration and bandwidth properties of the SDNS are consistently explained by the proposed generation mechanism. While observations in the terrestrial magnetosphere show that the chorus emissions are a group of large-amplitude wave elements generated naturally and intermittently, the mechanism proposed in the present study can explain both the intermittency and the frequency drift in the observed spectra.

  2. Resistive switching phenomena: A review of statistical physics approaches

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lee, Jae Sung; Lee, Shinbuhm; Noh, Tae Won

    2015-08-31

    Here we report that resistive switching (RS) phenomena are reversible changes in the metastable resistance state induced by external electric fields. After discovery ~50 years ago, RS phenomena have attracted great attention due to their potential application in next-generation electrical devices. Considerable research has been performed to understand the physical mechanisms of RS and explore the feasibility and limits of such devices. There have also been several reviews on RS that attempt to explain the microscopic origins of how regions that were originally insulators can change into conductors. However, little attention has been paid to the most important factor inmore » determining resistance: how conducting local regions are interconnected. Here, we provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field. We first classify RS phenomena according to their characteristic current–voltage curves: unipolar, bipolar, and threshold switchings. Second, we outline the microscopic origins of RS in oxides, focusing on the roles of oxygen vacancies: the effect of concentration, the mechanisms of channel formation and rupture, and the driving forces of oxygen vacancies. Third, we review RS studies from the perspective of statistical physics to understand connectivity change in RS phenomena. We discuss percolation model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS. Fourth, we review various switching-type conversion phenomena in RS: bipolar-unipolar, memory-threshold, figure-of-eight, and counter-figure-of-eight conversions. Finally, we review several related technological issues, such as improvement in high resistance fluctuations, sneak-path problems, and multilevel switching problems.« less

  3. Fast superconducting magnetic field switch

    DOE Patents [OSTI]

    Goren, Y.; Mahale, N.K.

    1996-08-06

    The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles. 6 figs.

  4. Fast superconducting magnetic field switch

    DOE Patents [OSTI]

    Goren, Yehuda; Mahale, Narayan K.

    1996-01-01

    The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles.

  5. Photoconductive switch package

    DOE Patents [OSTI]

    Caporaso, George J.

    2015-10-27

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  6. Photoconductive switch package

    DOE Patents [OSTI]

    Ca[rasp, George J

    2013-10-22

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  7. Photoconductive switch package

    DOE Patents [OSTI]

    Caporaso, George J

    2015-11-05

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  8. Silicon Carbide JFET Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5kV Enhancement-Model Silicon Carbide JFET Switch The novel 6.5kV SiC device and power module represent the world's highest-voltage module based on reliable, normally-off SiC JFETs. It reduces switching losses over that of Si-IGBTs by a factor of 20 and exhibits the fastest turn- on and turn-off of any 6.5kV-rated power module. Another major aspect of what makes this product unique is USCi's development and manufacturing approach. JFETs are simple transistor switches, yet for SiC materials, a

  9. Solid state switch

    DOE Patents [OSTI]

    Merritt, B.T.; Dreifuerst, G.R.

    1994-07-19

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1,500 A peak, 1.0 [mu]s pulsewidth, and 4,500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry. 6 figs.

  10. SPARK GAP SWITCH

    DOE Patents [OSTI]

    Neal, R.B.

    1957-12-17

    An improved triggered spark gap switch is described, capable of precisely controllable firing time while switching very large amounts of power. The invention in general comprises three electrodes adjustably spaced and adapted to have a large potential impressed between the outer electrodes. The central electrode includes two separate elements electrically connected togetaer and spaced apart to define a pair of spark gaps between the end electrodes. Means are provided to cause the gas flow in the switch to pass towards the central electrode, through a passage in each separate element, and out an exit disposed between the two separate central electrode elements in order to withdraw ions from the spark gap.

  11. An optical switch

    DOE Patents [OSTI]

    Christophorou, L.G.; Hunter, S.R.

    1987-04-30

    The invention is a gas mixture for a diffuse discharge switch having an electron attaching gas wherein electron attachment is brought about by indirect excitation of molecules to long live states by exposure to laser light. 3 figs.

  12. A radiation hard vacuum switch

    DOE Patents [OSTI]

    Boettcher, G.E.

    1988-07-19

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction. 3 figs.

  13. Thermionic gas switch

    DOE Patents [OSTI]

    Hatch, G.L.; Brummond, W.A.; Barrus, D.M.

    1984-04-05

    The present invention is directed to an improved temperature responsive thermionic gas switch utilizing a hollow cathode and a folded emitter surface area. The folded emitter surface area of the thermionic switch substantially increases the on/off ratio by changing the conduction surface area involved in the two modes thereof. The improved switch of this invention provides an on/off ratio of 450:1 compared to the 10:1 ratio of the prior known thermionic switch, while providing for adjusting the on current. In the improved switch of this invention the conduction area is made small in the off mode, while in the on mode the conduction area is made large. This is achieved by utilizing a folded hollow cathode configuration and utilizing a folded emitter surface area, and by making the dimensions of the folds small enough so that a space charge will develop in the convolutions of the folds and suppress unignited current, thus limiting the current carrying surface in the off mode.

  14. Multiple switch actuator

    DOE Patents [OSTI]

    Beyer, Edward T.

    1976-01-06

    The present invention relates to switches and switch actuating devices to be operated for purposes of arming a bomb or other missile as it is dropped or released from an aircraft. The particular bomb or missile in which this invention is applied is one in which there is a plurality of circuits which are to be armed by the closing of switches upon dropping or releasing of the bomb. The operation of the switches to closed position is normally accomplished by means of a pull-out wire; that is, a wire which is withdrawn from the bomb or missile at the time of release of the bomb, one end of the wire being attached to the aircraft. The conditions to be met are that the arming switches must be positively and surely maintained in open position until the bomb is released and the arming action is effected. The action of the pull-out wire in achieving the arming action must be sure and positive with minimum danger of malfunctioning, jamming or binding.

  15. Switching power pulse system

    DOE Patents [OSTI]

    Aaland, K.

    1983-08-09

    A switching system for delivering pulses of power from a source to a load using a storage capacitor charged through a rectifier, and maintained charged to a reference voltage level by a transistor switch and voltage comparator. A thyristor is triggered to discharge the storage capacitor through a saturable reactor and fractional turn saturable transformer having a secondary to primary turn ratio N of n:l/n = n[sup 2]. The saturable reactor functions as a soaker'' while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor charges, and then switches to a low impedance state to dump the charge of the storage capacitor into the load through the coupling capacitor. The transformer is comprised of a multilayer core having two secondary windings tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe for a linear particle accelerator and capacitance of a pulse forming network. To hold off discharge of the capacitance until it is fully charged, a saturable core is provided around the resistive beampipe to isolate the beampipe from the capacitance until it is fully charged. 5 figs.

  16. Microfabricated triggered vacuum switch

    DOE Patents [OSTI]

    Roesler, Alexander W. (Tijeras, NM); Schare, Joshua M. (Albuquerque, NM); Bunch, Kyle (Albuquerque, NM)

    2010-05-11

    A microfabricated vacuum switch is disclosed which includes a substrate upon which an anode, cathode and trigger electrode are located. A cover is sealed over the substrate under vacuum to complete the vacuum switch. In some embodiments of the present invention, a metal cover can be used in place of the trigger electrode on the substrate. Materials used for the vacuum switch are compatible with high vacuum, relatively high temperature processing. These materials include molybdenum, niobium, copper, tungsten, aluminum and alloys thereof for the anode and cathode. Carbon in the form of graphitic carbon, a diamond-like material, or carbon nanotubes can be used in the trigger electrode. Channels can be optionally formed in the substrate to mitigate against surface breakdown.

  17. FAST ACTING CURRENT SWITCH

    DOE Patents [OSTI]

    Batzer, T.H.; Cummings, D.B.; Ryan, J.F.

    1962-05-22

    A high-current, fast-acting switch is designed for utilization as a crowbar switch in a high-current circuit such as used to generate the magnetic confinement field of a plasma-confining and heat device, e.g., Pyrotron. The device particularly comprises a cylindrical housing containing two stationary, cylindrical contacts between which a movable contact is bridged to close the switch. The movable contact is actuated by a differential-pressure, airdriven piston assembly also within the housing. To absorb the acceleration (and the shock imparted to the device by the rapidly driven, movable contact), an adjustable air buffer assembly is provided, integrally connected to the movable contact and piston assembly. Various safety locks and circuit-synchronizing means are also provided to permit proper cooperation of the invention and the high-current circuit in which it is installed. (AEC)

  18. Switching power supply

    DOE Patents [OSTI]

    Mihalka, A.M.

    1984-06-05

    The invention is a repratable capacitor charging, switching power supply. A ferrite transformer steps up a dc input. The transformer primary is in a full bridge configuration utilizing power MOSFETs as the bridge switches. The transformer secondary is fed into a high voltage, full wave rectifier whose output is connected directly to the energy storage capacitor. The transformer is designed to provide adequate leakage inductance to limit capacitor current. The MOSFETs are switched to the variable frequency from 20 to 50 kHz to charge a capacitor from 0.6 kV. The peak current in a transformer primary and secondary is controlled by increasing the pulse width as the capacitor charges. A digital ripple counter counts pulses and after a preselected desired number is reached an up-counter is clocked.

  19. Room temperature deformation mechanisms of alumina particles observed from in situ micro-compression and atomistic simulations.

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sarobol, Pylin; Chandross, Michael E.; Carroll, Jay D.; Mook, William M.; Bufford, Daniel Charles; Boyce, Brad L.; Hattar, Khalid Mikhiel; Kotula, Paul G.; Hall, Aaron Christopher

    2015-09-22

    Aerosol deposition (AD) is a solid-state deposition technology that has been developed to fabricate ceramic coatings nominally at room temperature. Sub-micron ceramic particles accelerated by pressurized gas impact, deform, and consolidate on substrates under vacuum. Ceramic particle consolidation in AD coatings is highly dependent on particle deformation and bonding; these behaviors are not well understood. In this work, atomistic simulations and in situ micro-compressions in the scanning electron microscope, and the transmission electron microscope (TEM) were utilized to investigate fundamental mechanisms responsible for plastic deformation/fracture of particles under applied compression. Results showed that highly defective micron-sized alumina particles, initially containingmore » numerous dislocations or a grain boundary, exhibited no observable shape change before fracture/fragmentation. Simulations and experimental results indicated that particles containing a grain boundary only accommodate low strain energy per unit volume before crack nucleation and propagation. In contrast, nearly defect-free, sub-micron, single crystal alumina particles exhibited plastic deformation and fracture without fragmentation. Dislocation nucleation/motion, significant plastic deformation, and shape change were observed. Simulation and TEM in situ micro-compression results indicated that nearly defect-free particles accommodate high strain energy per unit volume associated with dislocation plasticity before fracture. As a result, the identified deformation mechanisms provide insight into feedstock design for AD.« less

  20. Room temperature deformation mechanisms of alumina particles observed from in situ micro-compression and atomistic simulations.

    SciTech Connect (OSTI)

    Sarobol, Pylin; Chandross, Michael E.; Carroll, Jay D.; Mook, William M.; Bufford, Daniel Charles; Boyce, Brad L.; Hattar, Khalid Mikhiel; Kotula, Paul G.; Hall, Aaron Christopher

    2015-09-22

    Aerosol deposition (AD) is a solid-state deposition technology that has been developed to fabricate ceramic coatings nominally at room temperature. Sub-micron ceramic particles accelerated by pressurized gas impact, deform, and consolidate on substrates under vacuum. Ceramic particle consolidation in AD coatings is highly dependent on particle deformation and bonding; these behaviors are not well understood. In this work, atomistic simulations and in situ micro-compressions in the scanning electron microscope, and the transmission electron microscope (TEM) were utilized to investigate fundamental mechanisms responsible for plastic deformation/fracture of particles under applied compression. Results showed that highly defective micron-sized alumina particles, initially containing numerous dislocations or a grain boundary, exhibited no observable shape change before fracture/fragmentation. Simulations and experimental results indicated that particles containing a grain boundary only accommodate low strain energy per unit volume before crack nucleation and propagation. In contrast, nearly defect-free, sub-micron, single crystal alumina particles exhibited plastic deformation and fracture without fragmentation. Dislocation nucleation/motion, significant plastic deformation, and shape change were observed. Simulation and TEM in situ micro-compression results indicated that nearly defect-free particles accommodate high strain energy per unit volume associated with dislocation plasticity before fracture. As a result, the identified deformation mechanisms provide insight into feedstock design for AD.

  1. Magnetic switches and circuits

    SciTech Connect (OSTI)

    Nunnally, W.C.

    1982-05-01

    This report outlines the use of saturable inductors as switches in lumped-element, magnetic-pulse compression circuits is discussed and the characteristic use of each is defined. In addition, the geometric constraints and magnetic pulse compression circuits used in short-pulse, low-inductance systems are considered. The scaling of presaturation leakage currents, magnetic energy losses, and switching times with geometrical and material parameters are developed to aid in evaluating magnetic pulse compression systems in a particular application. Finally, a scheme for increasing the couping coefficient in saturable stripline transformers is proposed to enable their use in the short-pulse, high-voltage regime.

  2. Dedication of Ethernet Switch | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Dedication of Ethernet Switch Dedication of Ethernet Switch A presentation of how Nuclear Logistics Inc. performed CGD on the RuggedCom Ethernet Switches. The presentation lays out ...

  3. Laser activated diffuse discharge switch (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Laser activated diffuse discharge switch Title: Laser activated diffuse discharge switch The invention is a gas mixture for a diffuse discharge switch which is capable of changing ...

  4. MEMRISTIVE SWITCHING: PHYSICAL MECHANISMS AND APPLICATIONS. ...

    Office of Scientific and Technical Information (OSTI)

    Information: Proposed for publication in Modern Physics Letters B. Research Org: Sandia ... Country of Publication: United States Language: English Word Cloud More Like This Full ...

  5. Switching power pulse system

    DOE Patents [OSTI]

    Aaland, Kristian

    1983-01-01

    A switching system for delivering pulses of power from a source (10) to a load (20) using a storage capacitor (C3) charged through a rectifier (D1, D2), and maintained charged to a reference voltage level by a transistor switch (Q1) and voltage comparator (12). A thyristor (22) is triggered to discharge the storage capacitor through a saturable reactor (18) and fractional turn saturable transformer (16) having a secondary to primary turn ratio N of n:l/n=n.sup.2. The saturable reactor (18) functions as a "soaker" while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor (C4) charges, and then switches to a low impedance state to dump the charge of the storage capacitor (C3) into the load through the coupling capacitor (C4). The transformer is comprised of a multilayer core (26) having two secondary windings (28, 30) tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes (32, 34) for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe (40) for a linear particle accelerator and capacitance of a pulse forming network (42). To hold off discharge of the capacitance until it is fully charged, a saturable core (44) is provided around the resistive beampipe (40) to isolate the beampipe from the capacitance (42) until it is fully charged.

  6. Observational evidence of torus instability as trigger mechanism for coronal mass ejections: The 2011 August 4 filament eruption

    SciTech Connect (OSTI)

    Zuccarello, F. P.; Poedts, S.; Seaton, D. B.; Mierla, M.; Rachmeler, L. A.; Romano, P.; Zuccarello, F. E-mail: Stefaan.Poedts@wis.kuleuven.be E-mail: marilena@oma.be E-mail: Paolo.Romano@oact.inaf.it

    2014-04-20

    Solar filaments are magnetic structures often observed in the solar atmosphere and consist of plasma that is cooler and denser than their surroundings. They are visible for dayseven weekswhich suggests that they are often in equilibrium with their environment before disappearing or erupting. Several eruption models have been proposed that aim to reveal what mechanism causes (or triggers) these solar eruptions. Validating these models through observations represents a fundamental step in our understanding of solar eruptions. We present an analysis of the observation of a filament eruption that agrees with the torus instability model. This model predicts that a magnetic flux rope embedded in an ambient field undergoes an eruption when the axis of the flux rope reaches a critical height that depends on the topology of the ambient field. We use the two vantage points of the Solar Dynamics Observatory (SDO) and the Solar TErrestrial RElations Observatory to reconstruct the three-dimensional shape of the filament, to follow its morphological evolution, and to determine its height just before eruption. The magnetograms acquired by SDO/Helioseismic and Magnetic Imager are used to infer the topology of the ambient field and to derive the critical height for the onset of the torus instability. Our analysis shows that the torus instability is the trigger of the eruption. We also find that some pre-eruptive processes, such as magnetic reconnection during the observed flares and flux cancellation at the neutral line, facilitated the eruption by bringing the filament to a region where the magnetic field was more vulnerable to the torus instability.

  7. Transparent electrode for optical switch

    DOE Patents [OSTI]

    Goldhar, J.; Henesian, M.A.

    1984-10-19

    The invention relates generally to optical switches and techniques for applying a voltage to an electro-optical crystal, and more particularly, to transparent electodes for an optical switch. System architectures for very large inertial confinement fusion (ICF) lasers require active optical elements with apertures on the order of one meter. Large aperture optical switches are needed for isolation of stages, switch-out from regenerative amplifier cavities and protection from target retroreflections.

  8. A Small Molecule That Switches a Ubiquitin Ligase From a Processive...

    Office of Scientific and Technical Information (OSTI)

    Title: A Small Molecule That Switches a Ubiquitin Ligase From a Processive to a Distributive Enzymatic Mechanism Authors: Kathman, Stefan G. ; Span, Ingrid ; Smith, Aaron T. ; Xu, ...

  9. MULTIPLE SPARK GAP SWITCH

    DOE Patents [OSTI]

    Schofield, A.E.

    1958-07-22

    A multiple spark gap switch of unique construction is described which will permit controlled, simultaneous discharge of several capacitors into a load. The switch construction includes a disc electrode with a plurality of protuberances of generally convex shape on one surface. A firing electrode is insulatingly supponted In each of the electrode protuberances and extends substantially to the apex thereof. Individual electrodes are disposed on an insulating plate parallel with the disc electrode to form a number of spark gaps with the protuberances. These electrodes are each connected to a separate charged capacitor and when a voltage ls applied simultaneously between the trigger electrodes and the dlsc electrode, each spark gap fires to connect its capacitor to the disc electrode and a subsequent load.

  10. Plasma opening switch

    DOE Patents [OSTI]

    Savage, Mark E.; Mendel, Jr., Clifford W.

    2001-01-01

    A command triggered plasma opening switch assembly using an amplification stage. The assembly surrounds a coaxial transmission line and has a main plasma opening switch (POS) close to the load and a trigger POS upstream from the main POS. The trigger POS establishes two different current pathways through the assembly depended on whether it has received a trigger current pulse. The initial pathway has both POS's with plasma between their anodes and cathodes to form a short across the transmission line and isolating the load. The final current pathway is formed when the trigger POS receives a trigger current pulse which energizes its fast coil to push the conductive plasma out from between its anode and cathode, allowing the main transmission line current to pass to the fast coil of the main POS, thus pushing its plasma out the way so as to establish a direct current pathway to the load.

  11. Automatic switching matrix

    DOE Patents [OSTI]

    Schlecht, Martin F.; Kassakian, John G.; Caloggero, Anthony J.; Rhodes, Bruce; Otten, David; Rasmussen, Neil

    1982-01-01

    An automatic switching matrix that includes an apertured matrix board containing a matrix of wires that can be interconnected at each aperture. Each aperture has associated therewith a conductive pin which, when fully inserted into the associated aperture, effects electrical connection between the wires within that particular aperture. Means is provided for automatically inserting the pins in a determined pattern and for removing all the pins to permit other interconnecting patterns.

  12. CREE: Making the Switch

    SciTech Connect (OSTI)

    Grider, David; Palmer, John

    2014-03-06

    CREE, with the help of ARPA-E funding, has developed a Silicon Carbide (SIC) transistor which can be used to create solid state transformers capable of meeting the unique needs of the emerging smart grid. SIC transistors are different from common silicon computer chips in that they handle grid scale voltages with ease and their high frequency switching is well suited to the intermittent nature of renewable energy generation.

  13. CREE: Making the Switch

    ScienceCinema (OSTI)

    Grider, David; Palmer, John

    2014-04-09

    CREE, with the help of ARPA-E funding, has developed a Silicon Carbide (SIC) transistor which can be used to create solid state transformers capable of meeting the unique needs of the emerging smart grid. SIC transistors are different from common silicon computer chips in that they handle grid scale voltages with ease and their high frequency switching is well suited to the intermittent nature of renewable energy generation.

  14. Modeling Combustion Control for High Power Diesel Mode Switching |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Combustion Control for High Power Diesel Mode Switching Modeling Combustion Control for High Power Diesel Mode Switching Poster presentation given at the 16th Directions in Engine-Efficiency and Emissions Research (DEER) Conference in Detroit, MI, September 27-30, 2010. p-20_banerjee.pdf (160.26 KB) More Documents & Publications Diesel Injection Shear-Stress Advanced Nozzle (DISSAN) In-Cylinder Mechanisms of PCI Heat-Release Rate Control by Fuel Reactivity

  15. Neutron activated switch

    DOE Patents [OSTI]

    Barton, David M.

    1991-01-01

    A switch for reacting quickly to a neutron emission. A rod consisting of fissionable material is located inside a vacuum tight body. An adjustable contact is located coaxially at an adjustable distance from one end of the rod. Electrical leads are connected to the rod and to the adjustable contact. With a vacuum drawn inside the body, a neutron bombardment striking the rod causes it to heat and expand longitudinally until it comes into contact with the adjustable contact. This circuit closing occurs within a period of a few microseconds.

  16. Compound semiconductor optical waveguide switch

    DOE Patents [OSTI]

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  17. Sensor Switch's Bright Manufacturing Future

    Broader source: Energy.gov [DOE]

    The switch helps with cost effective energy savings by turning off the lights when an occupancy sensor says the room is empty.

  18. Switch LLC | Open Energy Information

    Open Energy Info (EERE)

    Maryland Zip: 20886 Sector: Solar Product: Installer and distributor of small-scale solar passive, PV, fuel cell, and other distributed energy systems. References: Switch...

  19. Data center coolant switch

    SciTech Connect (OSTI)

    Iyengar, Madhusudan K.; Parida, Pritish R.; Schultz, Mark D.

    2015-10-06

    A data center cooling system is operated in a first mode; it has an indoor portion wherein heat is absorbed from components in the data center, and an outdoor heat exchanger portion wherein outside air is used to cool a first heat transfer fluid (e.g., water) present in at least the outdoor heat exchanger portion of the cooling system during the first mode. The first heat transfer fluid is a relatively high performance heat transfer fluid (as compared to the second fluid), and has a first heat transfer fluid freezing point. A determination is made that an appropriate time has been reached to switch from the first mode to a second mode. Based on this determination, the outdoor heat exchanger portion of the data cooling system is switched to a second heat transfer fluid, which is a relatively low performance heat transfer fluid, as compared to the first heat transfer fluid. It has a second heat transfer fluid freezing point lower than the first heat transfer fluid freezing point, and the second heat transfer fluid freezing point is sufficiently low to operate without freezing when the outdoor air temperature drops below a first predetermined relationship with the first heat transfer fluid freezing point.

  20. Hybrid switch for resonant power converters

    DOE Patents [OSTI]

    Lai, Jih-Sheng; Yu, Wensong

    2014-09-09

    A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

  1. Battery switch for downhole tools

    DOE Patents [OSTI]

    Boling, Brian E.

    2010-02-23

    An electrical circuit for a downhole tool may include a battery, a load electrically connected to the battery, and at least one switch electrically connected in series with the battery and to the load. The at least one switch may be configured to close when a tool temperature exceeds a selected temperature.

  2. Optimized scalable network switch

    DOE Patents [OSTI]

    Blumrich, Matthias A.; Chen, Dong; Coteus, Paul W.

    2010-02-23

    In a massively parallel computing system having a plurality of nodes configured in m multi-dimensions, each node including a computing device, a method for routing packets towards their destination nodes is provided which includes generating at least one of a 2m plurality of compact bit vectors containing information derived from downstream nodes. A multilevel arbitration process in which downstream information stored in the compact vectors, such as link status information and fullness of downstream buffers, is used to determine a preferred direction and virtual channel for packet transmission. Preferred direction ranges are encoded and virtual channels are selected by examining the plurality of compact bit vectors. This dynamic routing method eliminates the necessity of routing tables, thus enhancing scalability of the switch.

  3. High voltage coaxial switch

    DOE Patents [OSTI]

    Rink, John P.

    1983-07-19

    A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure.

  4. High voltage coaxial switch

    DOE Patents [OSTI]

    Rink, J.P.

    1983-07-19

    A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure. 3 figs.

  5. FAST OPENING SWITCH

    DOE Patents [OSTI]

    Bender, M.; Bennett, F.K.; Kuckes, A.F.

    1963-09-17

    A fast-acting electric switch is described for rapidly opening a circuit carrying large amounts of electrical power. A thin, conducting foil bridges a gap in this circuit and means are provided for producing a magnetic field and eddy currents in the foil, whereby the foil is rapidly broken to open the circuit across the gap. Advantageously the foil has a hole forming two narrow portions in the foil and the means producing the magnetic field and eddy currents comprises an annular coil having its annulus coaxial with the hole in the foil and turns adjacent the narrow portions of the foil. An electrical current flows through the coil to produce the magnetic field and eddy currents in the foil. (AEC)

  6. Optimized scalable network switch

    DOE Patents [OSTI]

    Blumrich, Matthias A. (Ridgefield, CT); Chen, Dong (Croton On Hudson, NY); Coteus, Paul W. (Yorktown Heights, NY); Gara, Alan G. (Mount Kisco, NY); Giampapa, Mark E. (Irvington, NY); Heidelberger, Philip (Cortlandt Manor, NY); Steinmacher-Burow, Burkhard D. (Mount Kisco, NY); Takken, Todd E. (Mount Kisco, NY); Vranas, Pavlos M. (Bedford Hills, NY)

    2007-12-04

    In a massively parallel computing system having a plurality of nodes configured in m multi-dimensions, each node including a computing device, a method for routing packets towards their destination nodes is provided which includes generating at least one of a 2m plurality of compact bit vectors containing information derived from downstream nodes. A multilevel arbitration process in which downstream information stored in the compact vectors, such as link status information and fullness of downstream buffers, is used to determine a preferred direction and virtual channel for packet transmission. Preferred direction ranges are encoded and virtual channels are selected by examining the plurality of compact bit vectors. This dynamic routing method eliminates the necessity of routing tables, thus enhancing scalability of the switch.

  7. "Smart" watchdog safety switch

    DOE Patents [OSTI]

    Kronberg, James W.

    1991-01-01

    A method and apparatus for monitoring a process having a periodic output so that the process equipment is not damaged in the event of a controller failure, comprising a low-pass and peak clipping filter, an event detector that generates an event pulse for each valid change in magnitude of the filtered periodic output, a timing pulse generator, a counter that increments upon receipt of any timing pulse and resets to zero on receipt of any event pulse, an alarm that alerts when the count reaches some preselected total count, and a set of relays that opens to stop power to process equipment. An interface module can be added to allow the switch to accept a variety of periodic output signals.

  8. ''Smart'' watchdog safety switch

    DOE Patents [OSTI]

    Kronberg, J.W.

    1991-10-01

    A method and apparatus for monitoring a process having a periodic output so that the process equipment is not damaged in the event of a controller failure, comprising a low-pass and peak clipping filter, an event detector that generates an event pulse for each valid change in magnitude of the filtered periodic output, a timing pulse generator, a counter that increments upon receipt of any timing pulse and resets to zero on receipt of any event pulse, an alarm that alerts when the count reaches some preselected total count, and a set of relays that opens to stop power to process equipment. An interface module can be added to allow the switch to accept a variety of periodic output signals. 21 figures.

  9. Dielectric liquid pulsed-power switch

    DOE Patents [OSTI]

    Christophorou, Loucas G.; Faidas, Homer

    1990-01-01

    This disclosure identifies dielectric liquids for use as opening and closing switching media in pulsed power technology, and describes a dielectric-liquid-pulsed-power switch empolying flashlamps.

  10. Soft Switching Technologies | Open Energy Information

    Open Energy Info (EERE)

    Soft Switching Technologies Jump to: navigation, search Name: Soft Switching Technologies Place: Wisconsin Product: Supplier of power quality solutions for delivery of highly...

  11. Alarm toe switch. [Patent application

    DOE Patents [OSTI]

    Ganyard, F.P.

    1980-11-18

    An alarm toe switch inserted within a shoe for energizing an alarm circuit in a covert manner includes an insole mounting pad into which a miniature reed switch is fixedly molded. An elongated slot perpendicular to the reed switch is formed in the bottom surface of the mounting pad. A permanent cylindrical magnet positioned in the forward portion of the slot with a diameter greater than the pad thickness causes a bump above the pad. A foam rubber block is also positioned in the slot rearwardly of the magnet and holds the magnet in normal inoperative relation. A non-magnetic support plate covers the slot and holds the magnet and foam rubber in the slot. The plate minimizes bending and frictional forces to improve movement of the magnet for reliable switch activation. The bump occupies the knuckle space beneath the big toe. When the big toe is scrunched rearwardly the magnet is moved within the slot relative to the reed switch, thus magnetically activating the switch. When toe pressure is released the foam rubber block forces the magnet back into normal inoperative position to deactivate the reed switch.

  12. Regenerative switching CMOS system

    DOE Patents [OSTI]

    Welch, J.D.

    1998-06-02

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a series combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electrically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided. 14 figs.

  13. Regenerative switching CMOS system

    DOE Patents [OSTI]

    Welch, James D.

    1998-01-01

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.

  14. Low impedance switch

    DOE Patents [OSTI]

    Hornig, Donald F.

    1976-01-01

    1. A low inductance switch comprising a pair of spaced apart, annularly shaped, plate members of conducting material supported in substantially parallel, insulated relationship, said plate members being provided with a plurality of radially extending, spoke-like extensions whereby said members may be connected into a plurality of electrical circuits, and an electrical discharge means connected across said spaced plate members for effecting the simultaneous closing of the electrical circuits connected thereto, said electrical discharge means including an elongated, sealed envelope which contains an ionizable gas and which is supported on one of said plate members with the major axis of said envelope extending generally perpendicular to the plane of said plate members, a pair of elongated, spaced apart, insulated electrodes supported within said envelope and extending axially thereof, one of said electrodes being connected to each of said plate members, and a third, firing or trigger electrode supported within said envelope intermediate said main electrodes and being insulated from said main electrodes.

  15. Wide Bandgap Extrinsic Photoconductive Switches

    SciTech Connect (OSTI)

    Sullivan, J S

    2012-01-17

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  16. High PRF high current switch

    DOE Patents [OSTI]

    Moran, Stuart L.; Hutcherson, R. Kenneth

    1990-03-27

    A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

  17. Electronic logic for enhanced switch reliability

    DOE Patents [OSTI]

    Cooper, J.A.

    1984-01-20

    A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and fail-safe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

  18. Non-latching relay switch assembly

    DOE Patents [OSTI]

    Duimstra, Frederick A.

    1991-01-01

    A non-latching relay switch assembly which includes a coil section and a switch or contact section. The coil section includes a permanent magnet and an electromagnet. The respective sections are arranged in separate locations or cavities in the assembly. The switch has a "normal" position and is selectively switched by an overriding electromagnetic assembly. The switch returns to the "normal" position when the overriding electromagnetic assembly is inactive.

  19. Optical Switch Using Risley Prisms

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Christenson, Todd R. (Albuquerque, NM)

    2005-02-22

    An optical switch using Risley prisms and rotary microactuators to independently rotate the wedge prisms of each Risley prism pair is disclosed. The optical switch comprises an array of input Risley prism pairs that selectively redirect light beams from a plurality of input ports to an array of output Risley prism pairs that similarly direct the light beams to a plurality of output ports. Each wedge prism of each Risley prism pair can be independently rotated by a variable-reluctance stepping rotary microactuator that is fabricated by a multi-layer LIGA process. Each wedge prism can be formed integral to the annular rotor of the rotary microactuator by a DXRL process.

  20. Optical switch using Risley prisms

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Christenson, Todd R. (Albuquerque, NM)

    2003-04-15

    An optical switch using Risley prisms and rotary microactuators to independently rotate the wedge prisms of each Risley prism pair is disclosed. The optical switch comprises an array of input Risley prism pairs that selectively redirect light beams from a plurality of input ports to an array of output Risley prism pairs that similarly direct the light beams to a plurality of output ports. Each wedge prism of each Risley prism pair can be independently rotated by a variable-reluctance stepping rotary microactuator that is fabricated by a multi-layer LIGA process. Each wedge prism can be formed integral to the annular rotor of the rotary microactuator by a DXRL process.

  1. Hybrid switch for resonant power converters (Patent) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    Patent: Hybrid switch for resonant power converters Citation Details In-Document Search Title: Hybrid switch for resonant power converters A hybrid switch comprising two ...

  2. Anode initiated surface flashover switch

    DOE Patents [OSTI]

    Brainard, John P.; Koss, Robert J.

    2003-04-29

    A high voltage surface flashover switch has a pair of electrodes spaced by an insulator. A high voltage is applied to an anode, which is smaller than the opposing, grounded, cathode. When a controllable source of electrons near the cathode is energized, the electrons are attracted to the anode where they reflect to the insulator and initiate anode to cathode breakdown.

  3. High voltage MOSFET switching circuit

    DOE Patents [OSTI]

    McEwan, T.E.

    1994-07-26

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

  4. High voltage MOSFET switching circuit

    DOE Patents [OSTI]

    McEwan, Thomas E.

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  5. Spark gap switch with spiral gas flow

    DOE Patents [OSTI]

    Brucker, John P.

    1989-01-01

    A spark gap switch having a contaminate removal system using an injected gas. An annular plate concentric with an electrode of the switch defines flow paths for the injected gas which form a strong spiral flow of the gas in the housing which is effective to remove contaminates from the switch surfaces. The gas along with the contaminates is exhausted from the housing through one of the ends of the switch.

  6. Switch for serial or parallel communication networks

    DOE Patents [OSTI]

    Crosette, D.B.

    1994-07-19

    A communication switch apparatus and a method for use in a geographically extensive serial, parallel or hybrid communication network linking a multi-processor or parallel processing system has a very low software processing overhead in order to accommodate random burst of high density data. Associated with each processor is a communication switch. A data source and a data destination, a sensor suite or robot for example, may also be associated with a switch. The configuration of the switches in the network are coordinated through a master processor node and depends on the operational phase of the multi-processor network: data acquisition, data processing, and data exchange. The master processor node passes information on the state to be assumed by each switch to the processor node associated with the switch. The processor node then operates a series of multi-state switches internal to each communication switch. The communication switch does not parse and interpret communication protocol and message routing information. During a data acquisition phase, the communication switch couples sensors producing data to the processor node associated with the switch, to a downlink destination on the communications network, or to both. It also may couple an uplink data source to its processor node. During the data exchange phase, the switch couples its processor node or an uplink data source to a downlink destination (which may include a processor node or a robot), or couples an uplink source to its processor node and its processor node to a downlink destination. 9 figs.

  7. Switch for serial or parallel communication networks

    DOE Patents [OSTI]

    Crosette, Dario B.

    1994-01-01

    A communication switch apparatus and a method for use in a geographically extensive serial, parallel or hybrid communication network linking a multi-processor or parallel processing system has a very low software processing overhead in order to accommodate random burst of high density data. Associated with each processor is a communication switch. A data source and a data destination, a sensor suite or robot for example, may also be associated with a switch. The configuration of the switches in the network are coordinated through a master processor node and depends on the operational phase of the multi-processor network: data acquisition, data processing, and data exchange. The master processor node passes information on the state to be assumed by each switch to the processor node associated with the switch. The processor node then operates a series of multi-state switches internal to each communication switch. The communication switch does not parse and interpret communication protocol and message routing information. During a data acquisition phase, the communication switch couples sensors producing data to the processor node associated with the switch, to a downlink destination on the communications network, or to both. It also may couple an uplink data source to its processor node. During the data exchange phase, the switch couples its processor node or an uplink data source to a downlink destination (which may include a processor node or a robot), or couples an uplink source to its processor node and its processor node to a downlink destination.

  8. Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches

    DOE Patents [OSTI]

    Cooper, James A.

    1986-01-01

    A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

  9. Secure videoconferencing equipment switching system and method

    DOE Patents [OSTI]

    Hansen, Michael E.

    2009-01-13

    A switching system and method are provided to facilitate use of videoconference facilities over a plurality of security levels. The system includes a switch coupled to a plurality of codecs and communication networks. Audio/Visual peripheral components are connected to the switch. The switch couples control and data signals between the Audio/Visual peripheral components and one but nor both of the plurality of codecs. The switch additionally couples communication networks of the appropriate security level to each of the codecs. In this manner, a videoconferencing facility is provided for use on both secure and non-secure networks.

  10. Switch for Good Community Program

    SciTech Connect (OSTI)

    Crawford, Tabitha; Amran, Martha

    2013-11-19

    Switch4Good is an energy-savings program that helps residents reduce consumption from behavior changes; it was co-developed by Balfour Beatty Military Housing Management (BB) and WattzOn in Phase I of this grant. The program was offered at 11 Navy bases. Three customer engagement strategies were evaluated, and it was found that Digital Nudges (a combination of monthly consumption statements with frequent messaging via text or email) was most cost-effective.

  11. Threshold Switching Characteristics of Nb/NbO2/TiN Vertical Devices

    SciTech Connect (OSTI)

    Wang, Yuhan; Comes, Ryan B.; Wolf, Stuart A.; Lu, Jiwei

    2015-11-25

    Nb/NbO2/TiN vertical structures were synthesized in-situ and patterned to devices with different contact areas. The devices exhibited threshold resistive switching with minimal hysteresis and a small EThreshold (60~90 kV/cm). The switching behavior was unipolar, and demonstrated good repeatability. A less sharp but still sizable change in the device resistance was observed up to 150 °C. It was found that the resistive switching without Nb capping layer exhibited the hysteretic behavior and much larger EThreshold (~250 kV/cm) likely due to a 2-3 nm surface Nb2O5 layer. The stable threshold switching behavior well above room temperature shows the potential applications of this device as an electronic switch.

  12. Ferroelastic switching in a layered-perovskite thin film

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Chuanshou; Ke, Xiaoxing; Wang, Jianjun; Liang, Renrong; Luo, Zhenlin; Tian, Yu; Yi, Di; Zhang, Qintong; Wang, Jing; Han, Xiu -Feng; et al

    2016-02-03

    Here, a controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layeredperovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90 within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelasticmore » switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.« less

  13. Stable nonlinear Mach-Zehnder fiber switch

    DOE Patents [OSTI]

    Digonnet, Michel J. F.; Shaw, H. John; Pantell, Richard H.; Sadowski, Robert W.

    1999-01-01

    An all-optical fiber switch is implemented within a short Mach-Zehnder interferometer configuration. The Mach-Zehnder switch is constructed to have a high temperature stability so as to minimize temperature gradients and other thermal effects which result in undesirable instability at the output of the switch. The Mach-Zehnder switch of the preferred embodiment is advantageously less than 2 cm in length between couplers to be sufficiently short to be thermally stable, and full switching is accomplished by heavily doping one or both of the arms between the couplers so as to provide a highly nonlinear region within one or both of the arms. A pump input source is used to affect the propagation characteristics of one of the arms to control the output coupling ratio of the switch. Because of the high nonlinearity of the pump input arm, low pump powers can be used, thereby alleviating difficulties and high cost associated with high pump input powers.

  14. Optical switching system and method

    DOE Patents [OSTI]

    Ranganathan, Radha; Gal, Michael; Taylor, P. Craig

    1992-01-01

    An optically bistable device is disclosed. The device includes a uniformly thick layer of amorphous silicon to constitute a Fabry-Perot chamber positioned to provide a target area for a probe beam. The probe beam has a maximum energy less than the energy band gap of the amorphous semiconductor. In a preferred embodiment, a multilayer dielectric mirror is positioned on the Fabry-Perot chamber to increase the finesse of switching of the device. The index of refraction of the amorphous material is thermally altered to alter the transmission of the probe beam.

  15. Laser activated diffuse discharge switch

    DOE Patents [OSTI]

    Christophorou, Loucas G. (Oak Ridge, TN); Hunter, Scott R. (Oak Ridge, TN)

    1988-01-01

    The invention is a gas mixture for a diffuse discharge switch which is capable of changing from a conducting state to an insulating state in the presence of electrons upon the introduction of laser light. The mixture is composed of a buffer gas such as nitrogen or argon and an electron attaching gas such as C.sub.6 H.sub.5 SH, C.sub.6 H.sub.5 SCH.sub.3, CH.sub.3 CHO and CF.sub.3 CHO wherein the electron attachment is brought on by indirect excitation of molecules to long-lived states by exposure to laser light.

  16. Multiprocessor switch with selective pairing

    SciTech Connect (OSTI)

    Gara, Alan; Gschwind, Michael K; Salapura, Valentina

    2014-03-11

    System, method and computer program product for a multiprocessing system to offer selective pairing of processor cores for increased processing reliability. A selective pairing facility is provided that selectively connects, i.e., pairs, multiple microprocessor or processor cores to provide one highly reliable thread (or thread group). Each paired microprocessor or processor cores that provide one highly reliable thread for high-reliability connect with a system components such as a memory "nest" (or memory hierarchy), an optional system controller, and optional interrupt controller, optional I/O or peripheral devices, etc. The memory nest is attached to a selective pairing facility via a switch or a bus

  17. Laser-triggered vacuum switch

    DOE Patents [OSTI]

    Brannon, P.J.; Cowgill, D.F.

    1990-12-18

    A laser-triggered vacuum switch has a material such as a alkali metal halide on the cathode electrode for thermally activated field emission of electrons and ions upon interaction with a laser beam, the material being in contact with the cathode with a surface facing the discharge gap. The material is preferably a mixture of KCl and Ti powders. The laser may either shine directly on the material, preferably through a hole in the anode, or be directed to the material over a fiber optic cable. 10 figs.

  18. Laser-triggered vacuum switch

    DOE Patents [OSTI]

    Brannon, Paul J.; Cowgill, Donald F.

    1990-01-01

    A laser-triggered vacuum switch has a material such as a alkali metal halide on the cathode electrode for thermally activated field emission of electrons and ions upon interaction with a laser beam, the material being in contact with the cathode with a surface facing the discharge gap. The material is preferably a mixture of KCl and Ti powders. The laser may either shine directly on the material, preferably through a hole in the anode, or be directed to the material over a fiber optic cable.

  19. SWITCHING TRANSMITTER POSITIONING OF SYNCHROS

    DOE Patents [OSTI]

    Wolff, H.

    1962-03-13

    A transformer apparatus is designed for effecting the step positioning of synchro motors. The apparatus is provided with ganged switches and pre- selected contacts to permit the units and tens selection of the desired angular position for the synchro motor rotor with only the movement of two selector knobs required. With the selection thus made, the appropriate pre-selected signal is delivered to the synchro motor for positioning the rotor of the latter as selected. The transformer apparatus is divided into smaller arrangements to conform with coraputed trigonometric relations which will give the desired results. (AEC)

  20. Microwave-triggered laser switch

    DOE Patents [OSTI]

    Piltch, Martin S.

    1984-01-01

    A high-repetition rate switch for delivering short duration, high-power electrical pulses from a pulsed-charged dc power supply. The present invention utilizes a microwave-generating device such as a magnetron that is capable of producing high-power pulses at high-pulse repetition rates and fast-pulse risetimes for long periods with high reliability. The rail-gap electrodes provide a large surface area that reduces induction effects and minimizes electrode erosion. Additionally, breakdown is initiated in a continuous geometric fashion that also increases operating lifetime of the device.

  1. Microwave-triggered laser switch

    DOE Patents [OSTI]

    Piltch, M.S.

    1982-05-19

    A high-repetition rate switch is described for delivering short duration, high-powered electrical pulses from a pulsed-charged dc power supply. The present invention utilizes a microwave-generating device such as a magnetron that is capable of producing high-power pulses at high-pulse repetition rates and fast-pulse risetimes for long periods with high reliability. The rail-gap electrodes provide a large surface area that reduces induction effects and minimizes electrode erosion. Additionally, breakdown is initiated in a continuous geometric fashion that also increases operating lifetime of the device.

  2. A magnetically switched kicker for proton extraction

    SciTech Connect (OSTI)

    Dinkel, J.; Biggs, J.

    1989-03-01

    The application of magnetic current amplification and switching techniques to the generation of precise high current pulses for switching magnets is described. The square loop characteristic of Metglas tape wound cores at high excitation levels provides excellent switching characteristics for microsecond pulses. The rugged and passive nature of this type pulser makes it possible to locate the final stages of amplification at the load for maximum efficiency. 12 refs., 8 figs.

  3. Magnetic switch coupling to synchronize magnetic modulators

    DOE Patents [OSTI]

    Reed, K.W.; Kiekel, P.

    1999-04-27

    Apparatus for synchronizing the output pulses from a pair of magnetic switches is disclosed. An electrically conductive loop is provided between the pair of switches with the loop having windings about the core of each of the magnetic switches. The magnetic coupling created by the loop removes voltage and timing variations between the outputs of the two magnetic switches caused by any of a variety of factors. The only remaining variation is a very small fixed timing offset caused by the geometry and length of the loop itself. 13 figs.

  4. Multi-megavolt low jitter multistage switch

    DOE Patents [OSTI]

    Humphreys, D.R.; Penn, K.J. Jr.

    1985-06-19

    It is one object of the present invention to provide a multistage switch capable of holding off numerous megavolts, until triggered, from a particle beam accelerator of the type used for inertial confinement fusion. The invention provides a multistage switch having low timing jitter and capable of producing multiple spark channels for spreading current over a wider area to reduce electrode damage and increase switch lifetime. The switch has fairly uniform electric fields and a short spark gap for laser triggering and is engineered to prevent insulator breakdowns.

  5. Magnetic switch coupling to synchronize magnetic modulators

    DOE Patents [OSTI]

    Reed, Kim W.; Kiekel, Paul

    1999-01-01

    Apparatus for synchronizing the output pulses from a pair of magnetic switches. An electrically conductive loop is provided between the pair of switches with the loop having windlings about the core of each of the magnetic switches. The magnetic coupling created by the loop removes voltage and timing variations between the outputs of the two magnetic switches caused by any of a variety of factors. The only remaining variation is a very small fixed timing offset caused by the geometry and length of the loop itself.

  6. Passive Q-switching of a diode-pumped neodymium:YAG laser

    SciTech Connect (OSTI)

    Morris, J.A.

    1991-01-01

    Compact diode-pumped neodymium:YAG lasers are becoming common commercial devices. Such lasers are often Q-switched to enhance peak power or to allow greater harmonic conversion efficiency. Active electrooptic or acoustooptic modulators are usually used to Q-switch YAG lasers. While these techniques work well, they do require expensive and bulky modulators and driving electronics. For some applications a simpler technique, such as passive Q-switching, could replace these active Q-switches. This thesis investigates the suitability of two color center materials as possible saturable absorbers for compact Nd:YAG lasers. The first material, lithium fluoride with F{sub 2}{sup {minus}} defects, has been used previously as a Q-switch for flashlamp-pumped Nd:YAG lasers. The second material, sodium chloride with F{sub 2}{sup +} defects, has not, to the author's knowledge, been used as a saturable absorber in a YAG laser. Lithium fluoride was found to be an excellent Q-switch material for a small diode-pumped YAG laser. The passively Q-switched pulses were comparable to the best results using active Q-switches. The LiF saturable absorber material is compact, inexpensive, and easy to prepare. The only discovered drawback to this material is the observation of a gradual bleaching of the saturable absorption with extended use at high peak powers. This thesis describes the properties and preparation of the LiF Q-switch material. The use of colored sodium chloride as a Q-switch material is also described. This material has the unique property that the amount of saturable loss in a particular crystal direction can be dynamically adjusted through the action of polarized light incident on the crystal.

  7. A Reconnection Switch to Trigger gamma-Ray Burst Jet Dissipation

    SciTech Connect (OSTI)

    McKinney, Jonathan C.; Uzdensky, Dmitri A.

    2012-03-14

    Prompt gamma-ray burst (GRB) emission requires some mechanism to dissipate an ultrarelativistic jet. Internal shocks or some form of electromagnetic dissipation are candidate mechanisms. Any mechanism needs to answer basic questions, such as what is the origin of variability, what radius does dissipation occur at, and how does efficient prompt emission occur. These mechanisms also need to be consistent with how ultrarelativistic jets form and stay baryon pure despite turbulence and electromagnetic reconnection near the compact object and despite stellar entrainment within the collapsar model. We use the latest magnetohydrodynamical models of ultrarelativistic jets to explore some of these questions in the context of electromagnetic dissipation due to the slow collisional and fast collisionless reconnection mechanisms, as often associated with Sweet-Parker and Petschek reconnection, respectively. For a highly magnetized ultrarelativistic jet and typical collapsar parameters, we find that significant electromagnetic dissipation may be avoided until it proceeds catastrophically near the jet photosphere at large radii (r {approx} 10{sup 13}-10{sup 14}cm), by which the jet obtains a high Lorentz factor ({gamma} {approx} 100-1000), has a luminosity of L{sub j} {approx} 10{sup 50}-10{sup 51} erg s{sup -1}, has observer variability timescales of order 1s (ranging from 0.001-10s), achieves {gamma}{theta}{sub j} {approx} 10-20 (for opening half-angle {theta}{sub j}) and so is able to produce jet breaks, and has comparable energy available for both prompt and afterglow emission. A range of model parameters are investigated and simplified scaling laws are derived. This reconnection switch mechanism allows for highly efficient conversion of electromagnetic energy into prompt emission and associates the observed prompt GRB pulse temporal structure with dissipation timescales of some number of reconnecting current sheets embedded in the jet. We hope this work helps motivate the

  8. Ames Lab 101: Ultrafast Magnetic Switching

    SciTech Connect (OSTI)

    Jigang Wang

    2013-04-08

    Ames Laboratory physicists have found a new way to switch magnetism that is at least 1000 times faster than currently used in magnetic memory technologies. Magnetic switching is used to encode information in hard drives, magnetic random access memory and other computing devices. The discovery potentially opens the door to terahertz and faster memory speeds.

  9. WAP Memorandum 011: Clarification on Fuel Switching

    Broader source: Energy.gov [DOE]

    As the WAP continually develops skilled and technically proficient program personnel at the state and local levels, the DOE has decided to revise its current policy related to fuel switching in eligible homes served by the Program. WAP Grantees are now provided two options regarding the decision-making process for fuel switching to occur, detailed in WAP Memo 011.

  10. Ames Lab 101: Ultrafast Magnetic Switching

    ScienceCinema (OSTI)

    Jigang Wang

    2013-06-05

    Ames Laboratory physicists have found a new way to switch magnetism that is at least 1000 times faster than currently used in magnetic memory technologies. Magnetic switching is used to encode information in hard drives, magnetic random access memory and other computing devices. The discovery potentially opens the door to terahertz and faster memory speeds.

  11. Gas mixtures for spark gap closing switches

    DOE Patents [OSTI]

    Christophorou, Loucas G.; McCorkle, Dennis L.; Hunter, Scott R.

    1988-01-01

    Gas mixtures for use in spark gap closing switches comprised of fluorocarbons and low molecular weight, inert buffer gases. To this can be added a third gas having a low ionization potential relative to the buffer gas. The gas mixtures presented possess properties that optimized the efficiency spark gap closing switches.

  12. Gas mixtures for spark gap closing switches

    DOE Patents [OSTI]

    Christophorou, L.G.; McCorkle, D.L.; Hunter, S.R.

    1987-02-20

    Gas mixtures for use in spark gap closing switches comprised of fluorocarbons and low molecular weight, inert buffer gases. To this can be added a third gas having a low ionization potential relative to the buffer gas. The gas mixtures presented possess properties that optimized the efficiency spark gap closing switches. 6 figs.

  13. Transparent electrode for optical switch

    DOE Patents [OSTI]

    Goldhar, Julius; Henesian, Mark A.

    1986-01-01

    A low pressure gas electrode utilizing ionized gas in a glow discharge regime forms a transparent electrode for electro-optical switches. The transparent electrode comprises a low pressure gas region on both sides of the crystal. When the gas is ionized, e.g., by a glow discharge in the low pressure gas, the plasma formed is a good conductor. The gas electrode acts as a highly uniform conducting electrode. Since the plasma is transparent to a high energy laser beam passing through the crystal, the electrode is a transparent electrode. A crystal exposed from two sides to such a plasma can be charged up uniformly to any desired voltage. The plasma can be created either by the main high voltage pulser used to charge up the crystal or by auxiliary discharges or external sources of ionization. A typical configuration utilizes 10 torr argon in the discharge region adjacent to each crystal face.

  14. Switched-capacitor isolated LED driver

    DOE Patents [OSTI]

    Sanders, Seth R.; Kline, Mitchell

    2016-03-22

    A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

  15. Seismic switch for strong motion measurement

    DOE Patents [OSTI]

    Harben, P.E.; Rodgers, P.W.; Ewert, D.W.

    1995-05-30

    A seismic switching device is described that has an input signal from an existing microseismic station seismometer and a signal from a strong motion measuring instrument. The seismic switch monitors the signal level of the strong motion instrument and passes the seismometer signal to the station data telemetry and recording systems. When the strong motion instrument signal level exceeds a user set threshold level, the seismometer signal is switched out and the strong motion signal is passed to the telemetry system. The amount of time the strong motion signal is passed before switching back to the seismometer signal is user controlled between 1 and 15 seconds. If the threshold level is exceeded during a switch time period, the length of time is extended from that instant by one user set time period. 11 figs.

  16. Seismic switch for strong motion measurement

    DOE Patents [OSTI]

    Harben, Philip E. (Oakley, CA); Rodgers, Peter W. (Santa Barbara, CA); Ewert, Daniel W. (Patterson, CA)

    1995-01-01

    A seismic switching device that has an input signal from an existing microseismic station seismometer and a signal from a strong motion measuring instrument. The seismic switch monitors the signal level of the strong motion instrument and passes the seismometer signal to the station data telemetry and recording systems. When the strong motion instrument signal level exceeds a user set threshold level, the seismometer signal is switched out and the strong motion signal is passed to the telemetry system. The amount of time the strong motion signal is passed before switching back to the seismometer signal is user controlled between 1 and 15 seconds. If the threshold level is exceeded during a switch time period, the length of time is extended from that instant by one user set time period.

  17. Gas mixtures for spark gap closing switches (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Gas mixtures for spark gap closing switches Title: Gas mixtures for spark gap closing switches Gas mixtures for use in spark gap closing switches comprised of fluorocarbons and low ...

  18. Ternary gas mixture for diffuse discharge switch (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Ternary gas mixture for diffuse discharge switch Title: Ternary gas mixture for diffuse discharge switch A new diffuse discharge gas switch wherein a mixture of gases is used to ...

  19. Modeling Combustion Control for High Power Diesel Mode Switching...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Combustion Control for High Power Diesel Mode Switching Modeling Combustion Control for High Power Diesel Mode Switching Poster presentation given at the 16th Directions in ...

  20. Fundamental New Insight Into Material for Optical-Switching ...

    Office of Science (SC) Website

    Fundamental New Insight Into Material for Optical-Switching Basic Energy Sciences (BES) ... Fundamental New Insight Into Material for Optical-Switching A triple point, where three ...

  1. Electric field-induced magnetic switching in Mn:ZnO film

    SciTech Connect (OSTI)

    Ren, S. X.; Sun, G. W.; Zhao, J.; Dong, J. Y.; Zhao, X.; Chen, W.; Wei, Y.; Ma, Z. C.

    2014-06-09

    A large magnetic modulation, accompanied by stable bipolar resistive switching (RS) behavior, was observed in a Mn:ZnO film by applying a reversible electric field. A significant enhancement of the ferromagnetism of the film, to about five times larger than that in the initial (as-grown) state (IS), was obtained by switching the film into the low resistance state. X-ray photoelectron spectroscopy demonstrated the existence of abundant oxygen vacancies in the IS of the film. We suggest that this electric field-induced magnetic switching effect originates with the migration and redistribution of oxygen vacancies during RS. Our work indicates that electric switching is an effective and simple method to increase the ferromagnetism of diluted magnetic oxide films. This provides a promising direction for research in spintronic devices.

  2. Shift in the Equilibrium between On and Off States of the Allosteric Switch in Ras-GppNHp Affected by Small Molecules and Bulk Solvent Composition

    SciTech Connect (OSTI)

    Holzapfel, Genevieve; Buhrman, Greg; Mattos, Carla

    2012-08-31

    Ras GTPase cycles between its active GTP-bound form promoted by GEFs and its inactive GDP-bound form promoted by GAPs to affect the control of various cellular functions. It is becoming increasingly apparent that subtle regulation of the GTP-bound active state may occur through promotion of substates mediated by an allosteric switch mechanism that induces a disorder to order transition in switch II upon ligand binding at an allosteric site. We show with high-resolution structures that calcium acetate and either dithioerythritol (DTE) or dithiothreitol (DTT) soaked into H-Ras-GppNHp crystals in the presence of a moderate amount of poly(ethylene glycol) (PEG) can selectively shift the equilibrium to the 'on' state, where the active site appears to be poised for catalysis (calcium acetate), or to what we call the 'ordered off' state, which is associated with an anticatalytic conformation (DTE or DTT). We also show that the equilibrium is reversible in our crystals and dependent on the nature of the small molecule present. Calcium acetate binding in the allosteric site stabilizes the conformation observed in the H-Ras-GppNHp/NOR1A complex, and PEG, DTE, and DTT stabilize the anticatalytic conformation observed in the complex between the Ras homologue Ran and Importin-{beta}. The small molecules are therefore selecting biologically relevant conformations in the crystal that are sampled by the disordered switch II in the uncomplexed GTP-bound form of H-Ras. In the presence of a large amount of PEG, the ordered off conformation predominates, whereas in solution, in the absence of PEG, switch regions appear to remain disordered in what we call the off state, unable to bind DTE.

  3. Package-interface thermal switch

    SciTech Connect (OSTI)

    Hyman, N.L.

    1995-05-24

    The package-interface thermal switch (PITS) is an active temperature control device for modulating the flow of thermal energy from satellite equipment, such as electronic modules or batteries, to the satellite mounting deck which serves as a heat sink. PITS comprises a mounting bolt made of a shaped memory alloy (SMA) actuating bolt and a non-metallic rod with a helical spring surrounding it forming a mounting bolt for a satellite equipment package. At least four mounting bolts are used for installing the equipment package and are preloaded to a predetermined stress representing the desired thermal conductance between the heat sink and the package. The SMA actuating bolt is in thermal contact with the component or package and expands or contracts as the result of changing package temperature and the helical return spring forces against the SMA actuating bolt portion of the PITS, increasing (hot-on`1 condition) or decreasing (cold-off condition) the pressure of the package against the mounting deck. As the PITS changes its total length, the thermal conductance between the two objects is increased or decreased. Thus thermal conductance changes as a direct function of package temperature, resulting in active temperature control. The simple design of the PITS reduces the cost and weight of the thermal control subsystem in satellites and its high reliability eliminates the requirement for thermal design verification testing.

  4. Electrically Switched Cesium Ion Exchange

    SciTech Connect (OSTI)

    JPH Sukamto; ML Lilga; RK Orth

    1998-10-23

    This report discusses the results of work to develop Electrically Switched Ion Exchange (ESIX) for separations of ions from waste streams relevant to DOE site clean-up. ESIX combines ion exchange and electrochemistry to provide a selective, reversible method for radionuclide separation that lowers costs and minimizes secondary waste generation typically associated with conventional ion exchange. In the ESIX process, an electroactive ion exchange film is deposited onto. a high surface area electrode, and ion uptake and elution are controlled directly by modulating the potential of the film. As a result, the production of secondary waste is minimized, since the large volumes of solution associated with elution, wash, and regeneration cycles typical of standard ion exchange are not needed for the ESIX process. The document is presented in two parts: Part I, the Summary Report, discusses the objectives of the project, describes the ESIX concept and the approach taken, and summarizes the major results; Part II, the Technology Description, provides a technical description of the experimental procedures and in-depth discussions on modeling, case studies, and cost comparisons between ESIX and currently used technologies.

  5. Delayed switching applied to memristor neural networks

    SciTech Connect (OSTI)

    Wang, Frank Z.; Yang Xiao; Lim Guan; Helian Na; Wu Sining; Guo Yike; Rashid, Md Mamunur

    2012-04-01

    Magnetic flux and electric charge are linked in a memristor. We reported recently that a memristor has a peculiar effect in which the switching takes place with a time delay because a memristor possesses a certain inertia. This effect was named the ''delayed switching effect.'' In this work, we elaborate on the importance of delayed switching in a brain-like computer using memristor neural networks. The effect is used to control the switching of a memristor synapse between two neurons that fire together (the Hebbian rule). A theoretical formula is found, and the design is verified by a simulation. We have also built an experimental setup consisting of electronic memristive synapses and electronic neurons.

  6. Mercury switch with non-wettable electrodes

    DOE Patents [OSTI]

    Karnowsky, Maurice M.; Yost, Frederick G.

    1987-01-01

    A mercury switch device comprising a pool of mercury and a plurality of electrical contacts made of or coated with a non-wettable material such as titanium diboride.

  7. Script for Monitoring Infiniband Switch Links

    Energy Science and Technology Software Center (OSTI)

    2015-09-08

    This script ingests a configuration file and parses it to determine an Infiniband network topology, specifically the port information for switches. It then loops over the fabric to determine which, if any, ports do not meet their desired configuration.

  8. Single Molecule Switches and Molecular Self-Assembly: Low Temperature STM Investigations and Manipulations

    SciTech Connect (OSTI)

    Iancu, Violeta

    2006-08-01

    This dissertation is devoted to single molecule investigations and manipulations of two porphyrin-based molecules, chlorophyll-a and Co-popphyrin. The molecules are absorbed on metallic substrates and studied at low temperatures using a scanning tunneling microscope. The electronic, structural and mechanical properties of the molecules are investigated in detail with atomic level precision. Chlorophyll-a is the key ingredient in photosynthesis processes while Co-porphyrin is a magnetic molecule that represents the recent emerging field of molecular spintronics. Using the scanning tunneling microscope tip and the substrate as electrodes, and the molecules as active ingredients, single molecule switches made of these two molecules are demonstrated. The first switch, a multiple and reversible mechanical switch, is realized by using chlorophyll-a where the energy transfer of a single tunneling electron is used to rotate a C-C bond of the molecule's tail on a Au(111) surface. Here, the det

  9. Magnetic switch for reactor control rod

    DOE Patents [OSTI]

    Germer, John H.

    1986-01-01

    A magnetic reed switch assembly for activating an electromagnetic grapple utilized to hold a control rod in position above a reactor core. In normal operation the magnetic field of a permanent magnet is short-circuited by a magnetic shunt, diverting the magnetic field away from the reed switch. The magnetic shunt is made of a material having a Curie-point at the desired release temperature. Above that temperature the material loses its ferromagnetic properties, and the magnetic path is diverted to the reed switch which closes and short-circuits the control circuit for the control rod electromagnetic grapple which allows the control rod to drop into the reactor core for controlling the reactivity of the core.

  10. Magnetic switch for reactor control rod. [LMFBR

    DOE Patents [OSTI]

    Germer, J.H.

    1982-09-30

    A magnetic reed switch assembly is described for activating an electromagnetic grapple utilized to hold a control rod in position above a reactor core. In normal operation the magnetic field of a permanent magnet is short-circuited by a magnetic shunt, diverting the magnetic field away from the reed switch. The magnetic shunt is made of a material having a Curie-point at the desired release temperature. Above that temperature the material loses its ferromagnetic properties, and the magnetic path is diverted to the reed switch which closes and short-circuits the control circuit for the control rod electro-magnetic grapple which allows the control rod to drop into the reactor core for controlling the reactivity of the core.

  11. Nanoeletromechanical switch and logic circuits formed therefrom

    SciTech Connect (OSTI)

    Nordquist, Christopher D.; Czaplewski, David A.

    2010-05-18

    A nanoelectromechanical (NEM) switch is formed on a substrate with a source electrode containing a suspended electrically-conductive beam which is anchored to the substrate at each end. This beam, which can be formed of ruthenium, bows laterally in response to a voltage applied between a pair of gate electrodes and the source electrode to form an electrical connection between the source electrode and a drain electrode located near a midpoint of the beam. Another pair of gate electrodes and another drain electrode can be located on an opposite side of the beam to allow for switching in an opposite direction. The NEM switch can be used to form digital logic circuits including NAND gates, NOR gates, programmable logic gates, and SRAM and DRAM memory cells which can be used in place of conventional CMOS circuits, or in combination therewith.

  12. Compact high voltage solid state switch

    DOE Patents [OSTI]

    Glidden, Steven C.

    2003-09-23

    A compact, solid state, high voltage switch capable of high conduction current with a high rate of current risetime (high di/dt) that can be used to replace thyratrons in existing and new applications. The switch has multiple thyristors packaged in a single enclosure. Each thyristor has its own gate drive circuit that circuit obtains its energy from the energy that is being switched in the main circuit. The gate drives are triggered with a low voltage, low current pulse isolated by a small inexpensive transformer. The gate circuits can also be triggered with an optical signal, eliminating the trigger transformer altogether. This approach makes it easier to connect many thyristors in series to obtain the hold off voltages of greater than 80 kV.

  13. Manufacturing fuel-switching capability, 1988

    SciTech Connect (OSTI)

    Not Available

    1991-09-01

    Historically, about one-third of all energy consumed in the United States has been used by manufacturers. About one-quarter of manufacturing energy is used as feedstocks and raw material inputs that are converted into nonenergy products; the remainder is used for its energy content. During 1988, the most recent year for which data are available, manufacturers consumed 15.5 quadrillion British thermal units (Btu) of energy to produce heat and power and to generate electricity. The manufacturing sector also has widespread capabilities to switch from one fuel to another for either economic or emergency reasons. There are numerous ways to define fuel switching. For the purposes of the Manufacturing Energy Consumption Survey (MECS), fuel switching is defined as the capability to substitute one energy source for another within 30 days with no significant modifications to the fuel-consuming equipment, while keeping production constant. Fuel-switching capability allows manufacturers substantial flexibility in choosing their mix of energy sources. The consumption of a given energy source can be maximized if all possible switching into that energy source takes place. The estimates in this report are based on data collected on the 1988 Manufacturing Energy Consumption Survey (MECS), Forms 846 (A through C). The EIA conducts this national sample survey of manufacturing energy consumption on a triennial basis. The MECS is the only comprehensive source of national-level data on energy-related information for the manufacturing industries. The MECS was first conducted in 1986 to collect data for 1985. This report presents information on the fuel-switching capabilities of manufacturers in 1988. This report is the second of a series based on the 1988 MECS. 8 figs., 31 tabs.

  14. Explosive-driven, high speed, arcless switch

    DOE Patents [OSTI]

    Skogmo, Phillip J.; Tucker, Tillman J.

    1987-01-01

    An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed.

  15. Explosive-driven, high speed, arcless switch

    DOE Patents [OSTI]

    Skogmo, P.J.; Tucker, T.J.

    1987-07-14

    An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed. 7 figs.

  16. Explosive-driven, high speed, arcless switch

    DOE Patents [OSTI]

    Skogmo, P.J.; Tucker, T.J.

    1986-05-02

    An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed.

  17. Optically triggered high voltage switch network and method for switching a high voltage

    DOE Patents [OSTI]

    El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  18. Wigner phase space distribution via classical adiabatic switching

    SciTech Connect (OSTI)

    Bose, Amartya; Makri, Nancy

    2015-09-21

    Evaluation of the Wigner phase space density for systems of many degrees of freedom presents an extremely demanding task because of the oscillatory nature of the Fourier-type integral. We propose a simple and efficient, approximate procedure for generating the Wigner distribution that avoids the computational difficulties associated with the Wigner transform. Starting from a suitable zeroth-order Hamiltonian, for which the Wigner density is available (either analytically or numerically), the phase space distribution is propagated in time via classical trajectories, while the perturbation is gradually switched on. According to the classical adiabatic theorem, each trajectory maintains a constant action if the perturbation is switched on infinitely slowly. We show that the adiabatic switching procedure produces the exact Wigner density for harmonic oscillator eigenstates and also for eigenstates of anharmonic Hamiltonians within the Wentzel-Kramers-Brillouin (WKB) approximation. We generalize the approach to finite temperature by introducing a density rescaling factor that depends on the energy of each trajectory. Time-dependent properties are obtained simply by continuing the integration of each trajectory under the full target Hamiltonian. Further, by construction, the generated approximate Wigner distribution is invariant under classical propagation, and thus, thermodynamic properties are strictly preserved. Numerical tests on one-dimensional and dissipative systems indicate that the method produces results in very good agreement with those obtained by full quantum mechanical methods over a wide temperature range. The method is simple and efficient, as it requires no input besides the force fields required for classical trajectory integration, and is ideal for use in quasiclassical trajectory calculations.

  19. Fundamental science investigations to develop a 6-MV laser triggered gas switch for ZR: first annual report.

    SciTech Connect (OSTI)

    Warne, Larry Kevin; Van Den Avyle, James A.; Lehr, Jane Marie; Rose, David; Krompholz, Hermann G.; Vela, Russell; Jorgenson, Roy Eberhardt; Timoshkin, Igor (University of Strathclyde, Glasgow, Scotland); Woodworth, Joseph Ray; Prestwich, Kenneth Randel (Voss Scientific, Albuquerque, NM); Krile, John; Given, Martin (University of Strathclyde, Glasgow, Scotland); McKee, G. Randall; Rosenthal, Stephen Edgar; Struve, Kenneth William; Welch, Dale Robert (Voss Scientific, Albuquerque, NM); Benwell, Andrew L. (University of Missouri-Columbia, Columbia, Missouri); Kovaleski, Scott; LeChien, Keith, R.; Johnson, David (Titan Pulse Sciences Division); Fouracre, R.A. (University of Strathclyde, Glasgow, Scotland); Yeckel, Chris (University of Missouri-Columbia, Columbia, Missouri); Wakeland, Peter Eric; Miller, A. R. (Titan Pulse Sciences Division); Hodge, Keith Conquest (Ktech Corporation, Albuquerque, NM); Pasik, Michael Francis; Savage, Mark Edward; Maenchen, John Eric; Curry, Randy D.; Feltz, Greg; Bliss, David Emery; MacGregor, Scott (University of Strathclyde, Glasgow, Scotland); Corley, J. P. (Ktech Corporation, Albuquerque, NM); Anaya, Victor (Ktech Corporation, Albuquerque, NM); Wallace, Zachariah (Ktech Corporation, Albuquerque, NM); Thoma, Carsten (Voss Scientific, Albuquerque, NM); Neuber, Andreas. (Texas Tech University, Lubbock, TX)

    2007-03-01

    In October 2005, an intensive three-year Laser Triggered Gas Switch (LTGS) development program was initiated to investigate and solve observed performance and reliability issues with the LTGS for ZR. The approach taken has been one of mission-focused research: to revisit and reassess the design, to establish a fundamental understanding of LTGS operation and failure modes, and to test evolving operational hypotheses. This effort is aimed toward deploying an initial switch for ZR in 2007, on supporting rolling upgrades to ZR as the technology can be developed, and to prepare with scientific understanding for the even higher voltage switches anticipated needed for future high-yield accelerators. The ZR LTGS was identified as a potential area of concern quite early, but since initial assessments performed on a simplified Switch Test Bed (STB) at 5 MV showed 300-shot lifetimes on multiple switch builds, this component was judged acceptable. When the Z{sub 20} engineering module was brought online in October 2003 frequent flashovers of the plastic switch envelope were observed at the increased stresses required to compensate for the programmatically increased ZR load inductance. As of October 2006, there have been 1423 Z{sub 20} shots assessing a variety of LTGS designs. Numerous incremental and fundamental switch design modifications have been investigated. As we continue to investigate the LTGS, the basic science of plastic surface tracking, laser triggering, cascade breakdown, and optics degradation remain high-priority mission-focused research topics. Significant progress has been made and, while the switch does not yet achieve design requirements, we are on the path to develop successively better switches for rolling upgrade improvements to ZR. This report summarizes the work performed in FY 2006 by the large team. A high-level summary is followed by detailed individual topical reports.

  20. Resistive switching and threshold switching behaviors in La{sub 0.1}Bi{sub 0.9}Fe{sub 1-x}Co{sub x}O{sub 3} ceramics

    SciTech Connect (OSTI)

    Wang, S. Y.; Qiu, Xue; Feng, Yu; Hou, X. G.; Yu, D. S.; Li, D. J.; Liu, W. F.; Gao, J.

    2012-08-01

    The effects of cobalt doping on the electrical conductivity of La{sub 0.1}Bi{sub 0.9}Fe{sub 1-x}Co{sub x}O{sub 3} (LBFCO, x = 0, 0.01, 0.03) ceramics were investigated. It is found that the leakage current increases with cobalt dopant concentration in LBFCO. On the application of bias voltage LBFCO ceramics with cobalt doping exhibits resistive switching effects at room temperature and threshold switching effects at elevated temperatures (50 Degree-Sign C and 80 Degree-Sign C). X-ray photoelectron spectroscopy of LBFCO ceramics show that cobalt dopant is bivalent as an acceptor, which induces an enhancement of oxygen vacancy concentration in LBFCO ceramics. Possible mechanisms for both resistive switching and threshold switching effects are discussed on the basis of the interplay of bound ferroelectric charges and mobile charged defects.

  1. Isolated and soft-switched power converter

    DOE Patents [OSTI]

    Peng, Fang Zheng; Adams, Donald Joe

    2002-01-01

    An isolated and soft-switched power converter is used for DC/DC and DC/DC/AC power conversion. The power converter includes two resonant tank circuits coupled back-to-back through an isolation transformer. Each resonant tank circuit includes a pair of resonant capacitors connected in series as a resonant leg, a pair of tank capacitors connected in series as a tank leg, and a pair of switching devices with anti-parallel clamping diodes coupled in series as resonant switches and clamping devices for the resonant leg. The power converter is well suited for DC/DC and DC/DC/AC power conversion applications in which high-voltage isolation, DC to DC voltage boost, bidirectional power flow, and a minimal number of conventional switching components are important design objectives. For example, the power converter is especially well suited to electric vehicle applications and load-side electric generation and storage systems, and other applications in which these objectives are important. The power converter may be used for many different applications, including electric vehicles, hybrid combustion/electric vehicles, fuel-cell powered vehicles with low-voltage starting, remote power sources utilizing low-voltage DC power sources, such as photovoltaics and others, electric power backup systems, and load-side electric storage and generation systems.

  2. Q-switched Raman laser system

    DOE Patents [OSTI]

    George, E.V.

    Method and apparatus for use of a Raman or Brillouin switch together with a conventional laser and a saturable absorber that is rapidly bleached at a predeterimined frequency nu = nu/sub O/, to ultimately produce a Raman or Brillouin pulse at frequency nu = nu/sub O/ +- nu /sub Stokes/.

  3. Q-Switched Raman laser system

    DOE Patents [OSTI]

    George, E. Victor

    1985-01-01

    Method and apparatus for use of a Raman or Brillouin switch together with a conventional laser and a saturable absorber that is rapidly bleached at a predetermined frequency .nu.=.nu..sub.0, to ultimately produce a Raman or Brillouin pulse at frequency .nu.=.nu..sub.0 .+-..nu..sub.Stokes.

  4. Optically initiated silicon carbide high voltage switch

    DOE Patents [OSTI]

    Caporaso, George J.; Sampayan, Stephen E.; Sullivan, James S.; Sanders; David M.

    2011-02-22

    An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

  5. Bakery Switches to Propane Vans | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bakery Switches to Propane Vans By Jo Napolitano * April 21, 2016 Tweet EmailPrint A switch to propane from diesel by a major Midwest bakery fleet showed promising results, ...

  6. In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching

    SciTech Connect (OSTI)

    Fujii, Takashi; Arita, Masashi; Takahashi, Yasuo; Fujiwara, Ichiro

    2011-05-23

    An in situ transmission electron microscopy (TEM) analysis of a solid electrolyte, Cu-GeS, during resistance switching is reported. Real-time observations of the filament formation and disappearance process were performed in the TEM instrument and the conductive-filament-formation model was confirmed experimentally. Narrow conductive filaments were formed corresponding to resistance switching from high- to low-resistance states. When the resistance changed to high-resistance state, the filament disappeared. It was also confirmed by use of selected area diffractometry and energy-dispersive x-ray spectroscopy that the conductive filament was made of nanocrystals composed mainly of Cu.

  7. Switching between ground and excited states by optical feedback in a quantum dot laser diode

    SciTech Connect (OSTI)

    Virte, Martin; Breuer, Stefan; Sciamanna, Marc; Panajotov, Krassimir

    2014-09-22

    We demonstrate switching between ground state and excited state emission in a quantum-dot laser subject to optical feedback. Even though the solitary laser emits only from the excited state, we can trigger the emission of the ground state by optical feedback. We observe recurrent but incomplete switching between the two emission states by variation of the external cavity length in the sub-micrometer scale. We obtain a good qualitative agreement of experimental results with simulation results obtained by a rate equation that accounts for the variations of the feedback phase.

  8. Interconnecting network for switching data packets and method for switching data packets

    DOE Patents [OSTI]

    Benner, Alan Frederic; Minkenberg, Cyriel Johan Agnes; Stunkel, Craig Brian

    2010-05-25

    The interconnecting network for switching data packets, having data and flow control information, comprises a local packet switch element (S1) with local input buffers (I(1,1) . . . I(1,y)) for buffering the incoming data packets, a remote packet switch element (S2) with remote input buffers (I(2,1) . . . I(2,y)) for buffering the incoming data packets, and data lines (L) for interconnecting the local and the remote packet switch elements (S1, S2). The interconnecting network further comprises a local and a remote arbiter (A1, A2) which are connected via control lines (CL) to the input buffers (I(1,1) . . . I(1,y), I(2,1) . . . I(2,y)), and which are formed such that they can provide that the flow control information is transmitted via the data lines (L) and the control lines (CL).

  9. Nanomechanical switch for integration with CMOS logic. (Journal...

    Office of Scientific and Technical Information (OSTI)

    Country of Publication: United States Language: English Subject: 42 ENGINEERING; 77 NANOSCIENCE AND NANOTECHNOLOGY; FABRICATION; PERFORMANCE; SWITCHES; TESTING; NANOSTRUCTURES; ...

  10. Filament formation and erasure in molybdenum oxide during resistive switching cycles

    SciTech Connect (OSTI)

    Kudo, Masaki; Arita, Masashi Ohno, Yuuki; Takahashi, Yasuo

    2014-10-27

    In-situ filament observations were carried out on the Cu/MoO{sub x}/TiN resistive random access memory (ReRAM) by using transmission electron microscopy. Multiple positive and negative I-V cycles were investigated. Clear set-reset bipolar switch corresponding to the characteristics of conventional ReRAM devices was recognized. Filament grew from TiN to Cu in the set cycle and shrank from TiN to Cu in the reset cycle. However, there was no clear contrast change in the image at the switching moment, and thus, switching is thought to occur in a local region of the filament. When the current was large at reset, the filament shrank much, and its position tended to change.

  11. Spin orbital torque driven magnetization switching in magnetic tunnel junction with inter-layer exchange coupling

    SciTech Connect (OSTI)

    Xu, Lei; Ma, Zhongshui; Wei, Dan

    2015-01-14

    The switching processes of elliptically shaped magnetic tunnel junction bits with the structure Ta/CoFeB/MgO/CoFeB have been studied by the micromagnetic models. By comparing the tunneling magneto-resistance minor and major loops calculated by our model with related experimental results, we found that the inter-layer exchange coupling between the two CoFeB layers and a reduced saturation magnetization M{sub s} distribution at the edge of the elliptical bit should be included. The chosen strength of the inter-layer exchange coupling also matches well with experimental observations. The current induced magnetization switching is generated from the spin Hall effect in the Ta layer. The critical switching currents calculated by our model are coincident with experiment. This shows the reliability of our micromagnetic model with the spin orbital torque term.

  12. RF-MEMS capacitive switches with high reliability

    DOE Patents [OSTI]

    Goldsmith, Charles L.; Auciello, Orlando H.; Carlisle, John A.; Sampath, Suresh; Sumant, Anirudha V.; Carpick, Robert W.; Hwang, James; Mancini, Derrick C.; Gudeman, Chris

    2013-09-03

    A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

  13. Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

    SciTech Connect (OSTI)

    Hong, Seok Man; Kim, Hee-Dong; An, Ho-Myoung; Kim, Tae Geun

    2013-12-15

    Graphical abstract: - Highlights: The resistive switching characteristics of WN{sub x} thin films. Excellent CMOS compatibility WN{sub x} films as a resistive switching material. Resistive switching mechanism revealed trap-controlled space charge limited conduction. Good endurance and retention properties over 10{sup 5} cycles, and 10{sup 5} s, respectively - Abstract: We report the resistive switching (RS) characteristics of tungsten nitride (WN{sub x}) thin films with excellent complementary metal-oxide-semiconductor (CMOS) compatibility. A Ti/WN{sub x}/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately 2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WN{sub x} films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >10{sup 5} cycles and a long retention time of >10{sup 5} s.

  14. Optimization of magnetic switches for single particle and cell transport

    SciTech Connect (OSTI)

    Abedini-Nassab, Roozbeh; Yellen, Benjamin B.; Murdoch, David M.; Kim, CheolGi

    2014-06-28

    The ability to manipulate an ensemble of single particles and cells is a key aim of lab-on-a-chip research; however, the control mechanisms must be optimized for minimal power consumption to enable future large-scale implementation. Recently, we demonstrated a matter transport platform, which uses overlaid patterns of magnetic films and metallic current lines to control magnetic particles and magnetic-nanoparticle-labeled cells; however, we have made no prior attempts to optimize the device geometry and power consumption. Here, we provide an optimization analysis of particle-switching devices based on stochastic variation in the particle's size and magnetic content. These results are immediately applicable to the design of robust, multiplexed platforms capable of transporting, sorting, and storing single cells in large arrays with low power and high efficiency.

  15. Float level switch for a nuclear power plant containment vessel

    DOE Patents [OSTI]

    Powell, J.G.

    1993-11-16

    This invention is a float level switch used to sense rise or drop in water level in a containment vessel of a nuclear power plant during a loss of coolant accident. The essential components of the device are a guide tube, a reed switch inside the guide tube, a float containing a magnetic portion that activates a reed switch, and metal-sheathed, ceramic-insulated conductors connecting the reed switch to a monitoring system outside the containment vessel. Special materials and special sealing techniques prevent failure of components and allow the float level switch to be connected to a monitoring system outside the containment vessel. 1 figures.

  16. Float level switch for a nuclear power plant containment vessel

    DOE Patents [OSTI]

    Powell, James G.

    1993-01-01

    This invention is a float level switch used to sense rise or drop in water level in a containment vessel of a nuclear power plant during a loss of coolant accident. The essential components of the device are a guide tube, a reed switch inside the guide tube, a float containing a magnetic portion that activates a reed switch, and metal-sheathed, ceramic-insulated conductors connecting the reed switch to a monitoring system outside the containment vessel. Special materials and special sealing techniques prevent failure of components and allow the float level switch to be connected to a monitoring system outside the containment vessel.

  17. Multiple acousto-optic q-switch

    DOE Patents [OSTI]

    Deason, Vance A.

    1993-01-01

    An improved dynamic moire interferometer comprised of a lasing medium providing a plurality of beams of coherent light, a multiple q-switch producing multiple trains of 100,000 or more pulses per second, a combining means collimating multiple trains of pulses into substantially a single train and directing beams to specimen gratings affixed to a test material, and a controller, triggering and sequencing the emission of the pulses with the occurrence and recording of a dynamic loading event.

  18. Methods for resistive switching of memristors

    DOE Patents [OSTI]

    Mickel, Patrick R.; James, Conrad D.; Lohn, Andrew; Marinella, Matthew; Hsia, Alexander H.

    2016-05-10

    The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state).

  19. Gas mixture for diffuse-discharge switch

    DOE Patents [OSTI]

    Christophorou, L.G.; Carter, J.G.; Hunter, S.R.

    1982-08-31

    Gaseous medium in a diffuse-discharge switch of a high-energy pulse generator is formed of argon combined with a compound selected from the group consisting of CF/sub 4/, C/sub 2/F/sub 6/, C/sub 3/F/sub 8/, n-C/sub 4/F/sub 10/, WF/sub 6/, (CF/sub 3/)/sub 2/S and (CF/sub 3/)/sub 2/O.

  20. Gas mixture for diffuse-discharge switch

    DOE Patents [OSTI]

    Christophorou, Loucas G.; Carter, James G.; Hunter, Scott R.

    1984-01-01

    Gaseous medium in a diffuse-discharge switch of a high-energy pulse generator is formed of argon combined with a compound selected from the group consisting of CF.sub.4, C.sub.2 F.sub.6, C.sub.3 F.sub.8, n-C.sub.4 F.sub.10, WF.sub.6, (CF.sub.3).sub.2 S and (CF.sub.3).sub.2 O.

  1. Multiple acousto-optic q-switch

    DOE Patents [OSTI]

    Deason, Vance A.

    1993-12-07

    An improved dynamic moire interferometer comprised of a lasing medium providing a plurality of beams of coherent light, a multiple q-switch producing multiple trains of 100,000 or more pulses per second, a combining means collimating multiple trains of pulses into substantially a single train and directing beams to specimen gratings affixed to a test material, and a controller, triggering and sequencing the emission of the pulses with the occurrence and recording of a dynamic loading event.

  2. HIGH VOLTAGE, HIGH CURRENT SPARK GAP SWITCH

    DOE Patents [OSTI]

    Dike, R.S.; Lier, D.W.; Schofield, A.E.; Tuck, J.L.

    1962-04-17

    A high voltage and current spark gap switch comprising two main electrodes insulatingly supported in opposed spaced relationship and a middle electrode supported medially between the main electrodes and symmetrically about the median line of the main electrodes is described. The middle electrode has a perforation aligned with the median line and an irradiation electrode insulatingly supported in the body of the middle electrode normal to the median line and protruding into the perforation. (AEC)

  3. Fiber Fabry-Perot tunable filter for high-speed optical packet switching

    SciTech Connect (OSTI)

    Taranenko, N.L.; Tenbrink, S.C.; Hsu, K.; Miller, C.M.

    1997-01-01

    Tunable optical filters are important building blocks for All-Optical systems and networks. Fast optical tuning in several microseconds is necessary to perform high-speed optical packet switching. Multi- Gigabit/sec packet-switching will provide flexibility and higher network throughput when large numbers of users communicate simultaneously. One approach to achieve fast wavelength tuning is to use high-speed piezoelectrically-driven Fiber Fabry-Perot tunable filters (FFP-TFs). The requirement for tuning in microseconds raises a whole new set of challenges, such as ringing, thermostability and mechanical inertia control. It was shown that correlation between the mechanical resonance and optical response of the filter is important for the filter`s speed and for mounting hardware and control circuitry optimization. These features together with the FFP-TF`s high capacitance (approximately 0.25-0.5 microfarad) are being folded into building a special controller to substantially improve the shape of the driving signal and the response of the filter. The resultant controller enables tuning the high-speed FFP-TF three-orders-of- magnitude faster than that possible with standard commercial FFP-TFS. The fastest switching time achieved is 2.5 microseconds. As the result, a new packet-switched media access control protocol is being designed to minimize the searching time. The filter scans only once through the entire optical region and then tunes to all the required channels one after another in a few microseconds. It can help update Rainbow-2 Broadcast-and-Select High-Speed Wavelength Division Multiplexing All-Optical network that currently has a circuit- switched protocol using standard FFP-TFS.

  4. Switch Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in LESCO 18 as a Transient Superconducting Phase is Formed Bill Schlotter or Josh Turner CXI L273 SPENCE,JOHN Dynamics of electron transfer: PSIferredoxin Sebastien Boutet...

  5. Switch Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Swimming Pool Covers Swimming Pool Covers Covering a pool when it is not in use is the single most effective means of reducing pool heating costs. | Photo courtesy of Aquatherm Industries. Covering a pool when it is not in use is the single most effective means of reducing pool heating costs. | Photo courtesy of Aquatherm Industries. You can significantly reduce swimming pool heating costs by using a pool cover. On the following pages, see the tables showing the costs of heating pools with and

  6. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect (OSTI)

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.; THORNTON,R.L.; DONALDSON,R.D.

    1999-12-17

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approx}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs, unlike a switch with conventional contacts. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  7. High-G testing of MEMS mechanical non-volatile memory and silicon...

    Office of Scientific and Technical Information (OSTI)

    High-G testing of MEMS mechanical non-volatile memory and silicon re-entry switch. Citation Details In-Document Search Title: High-G testing of MEMS mechanical non-volatile memory ...

  8. High-G testing of MEMS mechanical non-volatile memory and silicon...

    Office of Scientific and Technical Information (OSTI)

    Technical Report: High-G testing of MEMS mechanical non-volatile memory and silicon re-entry switch. Citation Details In-Document Search Title: High-G testing of MEMS mechanical ...

  9. Adsorption and switching properties of a N-benzylideneaniline based molecular switch on a Au(111) surface

    SciTech Connect (OSTI)

    Ovari, Laszlo; Luo, Ying; Haag, Rainer; Leyssner, Felix; Tegeder, Petra; Wolf, Martin

    2010-07-28

    High resolution electron energy loss spectroscopy has been employed to analyze the adsorption geometry and the photoisomerization ability of the molecular switch carboxy-benzylideneaniline (CBA) adsorbed on Au(111). CBA on Au(111) adopts a planar (trans) configuration in the first monolayer (ML) as well as for higher coverages (up to 6 ML), in contrast to the strongly nonplanar geometry of the molecule in solution. Illumination with UV light of CBA in direct contact with the Au(111) surface ({<=}1 ML) caused no changes in the vibrational structure, whereas at higher coverages (>1 ML) pronounced modifications of vibrational features were observed, which we assign to a trans{yields}cis isomerization. Thermal activation induced the back reaction to trans-CBA. We propose that the photoisomerization is driven by a direct (intramolecular) electronic excitation of the adsorbed CBA molecules in the second ML (and above) analogous to CBA in the liquid phase.

  10. In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory

    SciTech Connect (OSTI)

    Sun, Jun; Wu, Xing; Xu, Feng; Xu, Tao; Sun, Litao; Liu, Qi; Xie, Hongwei; Long, Shibing; Lv, Hangbing; Li, Yingtao; Liu, Ming

    2013-02-04

    In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the Ni/ZrO{sub 2}/Pt device. The device shows stable bipolar resistive switching behaviors after forming process, which is similar to the Ag/ZrO{sub 2}/Pt and Cu/ZrO{sub 2}/Pt devices. Using in situ transmission electron microscopy, we observe in real time that several conductive filaments are formed across the ZrO{sub 2} layer between Ni and Pt electrodes after forming. Energy-dispersive X-ray spectroscopy results confirm that Ni is the main composition of the conductive filaments. The ON-state resistance increases with increasing temperature, exhibiting the feature of metallic conduction. In addition, the calculated resistance temperature coefficient is equal to that of the 10-30 nm diameter Ni nanowire, further indicating that the nanoscale Ni conductive bridge is the physical origin of the observed conductive filaments. The resistive switching characteristics and the conductive filament's component of Ni/ZrO{sub 2}/Pt device are consistent with the characteristics of the typical solid-electrolyte-based resistive random access memory. Therefore, aside from Cu and Ag, Ni can also be used as an oxidizable electrode material for resistive random access memory applications.

  11. High voltage switches having one or more floating conductor layers

    DOE Patents [OSTI]

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  12. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  13. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  14. Elastomeric organic material for switching application

    SciTech Connect (OSTI)

    Shiju, K. E-mail: pravymon@gmail.com Praveen, T. E-mail: pravymon@gmail.com Preedep, P. E-mail: pravymon@gmail.com

    2014-10-15

    Organic Electronic devices like OLED, Organic Solar Cells etc are promising as, cost effective alternatives to their inorganic counterparts due to various reasons. However the organic semiconductors currently available are not attractive with respect to their high cost and intricate synthesis protocols. Here we demonstrate that Natural Rubber has the potential to become a cost effective solution to this. Here an attempt has been made to fabricate iodine doped poly isoprene based switching device. In this work Poly methyl methacrylate is used as dielectric layer and Aluminium are employed as electrodes.

  15. Massachusetts Schools Switch to Wood Pellets | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Massachusetts Schools Switch to Wood Pellets Massachusetts Schools Switch to Wood Pellets August 20, 2015 - 5:22pm Addthis Art created by a student at John Briggs Elementary School as part of their recent Green Ceremony. John Briggs Elementary is one of the Massachusetts schools switching their heating fuel source from petroleum based fuels to wood pellets. Art created by a student at John Briggs Elementary School as part of their recent Green Ceremony. John Briggs Elementary is one of the

  16. Current-level triggered plasma-opening switch

    DOE Patents [OSTI]

    Mendel, C.W.

    1987-06-29

    An opening switch for very high power electrical pulses uses a slow magnetic field to confine a plasma across a gap between two electrodes. The plasma conducts the electric pulse across the gap while the switch is closed. A magnetic field generated by the pulse repels the slow magnetic field from the negative electrode to push the plasma from the electrode, opening the switch. A plurality of radial vanes may be used to enhance the slow magnetic field. 5 figs.

  17. Current-level triggered plasma-opening switch

    DOE Patents [OSTI]

    Mendel, Clifford W.

    1989-01-01

    An opening switch for very high power electrical pulses uses a slow magnetic field to confine a plasma across a gap between two electrodes. The plasma conducts the electric pulse across the gap while the switch is closed. A magnetic field generated by the pulse repels the slow magnetic field from the negative electrode to push the plasma from the electrode, opening the switch. A plurality of radial vanes may be used to enhance the slow magnetic field.

  18. Commute Mode Switching Impact Tool | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Commute Mode Switching Impact Tool Commute Mode Switching Impact Tool Excel tool helps agencies project the impact that changes in employee commute modes would have on its employee commute emissions. The tool is designed to be used at the worksite level and summed up at the agency level. The output of this tool can help agencies establish appropriate greenhouse gas reduction targets for major worksites or clusters of worksites in common metropolitan areas. Download the Commute Mode Switching

  19. Organic solid state switches incorporating porphyrin compounds and method for producing organic solid state optical switches

    DOE Patents [OSTI]

    Wasielewski, M.R.; Gaines, G.L.; Niemczyk, M.P.; Johnson, D.G.; Gosztola, D.J.; O`Neil, M.P.

    1996-07-23

    A light-intensity dependent molecular switch comprised of a compound which shuttles an electron or a plurality of electrons from a plurality of electron donors to an electron acceptor upon being stimulated with light of predetermined wavelengths, said donors selected from porphyrins and other compounds, and a method for making said compound are disclosed. 4 figs.

  20. Organic solid state switches incorporating porphyrin compounds and method for producing organic solid state optical switches

    DOE Patents [OSTI]

    Wasielewski, Michael R.; Gaines, George L.; Niemczyk, Mark P.; Johnson, Douglas G.; Gosztola, David J.; O'Neil, Michael P.

    1996-01-01

    A light-intensity dependent molecular switch comprised of a compound which shuttles an electron or a plurality of electrons from a plurality of electron donors to an electron acceptor upon being stimulated with light of predetermined wavelengths, said donors selected from porphyrins and other compounds, and a method for making said compound.

  1. Organic solid state optical switches and method for producing organic solid state optical switches

    DOE Patents [OSTI]

    Wasielewski, M.R.; Gaines, G.L.; Niemczyk, M.P.; Johnson, D.G.; Gosztola, D.J.; O`Neil, M.P.

    1993-01-01

    This invention consists of a light-intensity dependent molecular switch comprised of a compound which shuttles an electron or a plurality of electrons from a plurality of electron donors to an electron acceptor upon being stimulated with light of predetermined wavelengths, and a method for making said compound.

  2. Thermionic switched self-actuating reactor shutdown system

    DOE Patents [OSTI]

    Barrus, Donald M. (San Jose, CA); Shires, Charles D. (San Jose, CA); Brummond, William A. (Livermore, CA)

    1989-01-01

    A self-actuating reactor shutdown system incorporating a thermionic switched electromagnetic latch arrangement which is responsive to reactor neutron flux changes and to reactor coolant temperature changes. The system is self-actuating in that the sensing thermionic device acts directly to release (scram) the control rod (absorber) without reference or signal from the main reactor plant protective and control systems. To be responsive to both temperature and neutron flux effects, two detectors are used, one responsive to reactor coolant temperatures, and the other responsive to reactor neutron flux increase. The detectors are incorporated into a thermionic diode connected electrically with an electromagnetic mechanism which under normal reactor operating conditions holds the the control rod in its ready position (exterior of the reactor core). Upon reaching either a specified temperature or neutron flux, the thermionic diode functions to short-circuit the electromagnetic mechanism causing same to lose its holding power and release the control rod, which drops into the reactor core region under gravitational force.

  3. A New Class of Switched Reluctance Motors without Permanent Magnets...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Motors without Permanent Magnets A New Class of Switched Reluctance Motors without Permanent Magnets 2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program ...

  4. Robust Diamond-Based RF Switch Yields Enhanced Communication...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A specialized radio frequency (RF) micro-electromechanical system (MEMS) switch that promises enhanced capabilities for next-generation military and commercial communication ...

  5. Multi-gap high impedance plasma opening switch

    DOE Patents [OSTI]

    Mason, R.J.

    1996-10-22

    A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode is disclosed. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources. 12 figs.

  6. Multi-gap high impedance plasma opening switch

    DOE Patents [OSTI]

    Mason, Rodney J.

    1996-01-01

    A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources.

  7. Electrocaloric devices based on thini-film heat switches

    SciTech Connect (OSTI)

    Epstein, Richard I; Malloy, Kevin J

    2009-01-01

    We describe a new approach to refrigeration and electrical generation that exploits the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of these thin-film heat engines can be at least as high as that of current thermoelectric devices. Advanced heat switches would enable thin-film heat engines to outperform conventional vaporcompression devices.

  8. Switching phase separation mode by varying the hydrophobicity...

    Office of Scientific and Technical Information (OSTI)

    Switching phase separation mode by varying the hydrophobicity of polymer additives in solution-processed semiconducting small-moleculepolymer blends Citation Details In-Document ...

  9. Switching behaviors of graphene-boron nitride nanotube heterojunctions...

    Office of Scientific and Technical Information (OSTI)

    analogue devices but their gapless nature has hindered their use in digital switches. ... 5; Journal ID: ISSN 2045-2322 Publisher: Nature Publishing Group Research Org: Sandia ...

  10. Picture of the Week: Molecular "dimmer" switches for biomedicine...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Molecular "dimmer" switches for biomedicine and bioenergy Scientists at Los Alamos ... The research has potential widespread application in biomedicine and bioenergy. August 30, ...

  11. Humidity effects on tip-induced polarization switching in lithium niobate

    SciTech Connect (OSTI)

    Ievlev, A. V.; Morozovska, A. N.; Shur, V. Ya.; Kalinin, S. V.

    2014-03-03

    In the last several decades, ferroelectrics have attracted much attention as perspective materials for nonlinear optics and data storage devices. Scanning probe microscopy (SPM) has emerged as a powerful tool both for studies of domain structures with nanoscale spatial resolution and for writing the isolated nanodomains by local application of the electric field. Quantitative analysis of the observed behavior requires understanding the role of environmental factors on imaging and switching process. Here, we study the influence of the relative humidity in the SPM chamber on tip-induced polarization switching. The observed effects are attributed to existence of a water meniscus between the tip and the sample surface in humid atmosphere. These results are important for a deeper understanding of complex investigations of ferroelectric materials and their applications and suggest the necessity for fundamental studies of electrocapillary phenomena at the tip-surface junction and their interplay with bias-induced materials responses.

  12. Humidity effects on tip-induced polarization switching in lithium niobate

    SciTech Connect (OSTI)

    Ievlev, Anton; Morozovska, A. N.; Shur, Vladimir Ya.; Kalinin, Sergei V

    2014-01-01

    In the last several decades, ferroelectrics have attracted much attention as perspective materials for nonlinear optics and data storage devices. Scanning probe microscopy (SPM) has emerged as a powerful tool both for studies of domain structures with nanoscale spatial resolution and for writing the isolated nanodomains by local application of the electric field. Quantitative analysis of the observed behavior requires understanding the role of environmental factors on imaging and switching process. Here we study the influence of the relative humidity in the SPM chamber on tip-induced polarization switching. The observed effects are attributed to existence of a water meniscus between the tip and the sample surface in humid atmosphere. These results are important for a deeper understanding of complex investigations of ferroelectric materials and their applications, and suggest the necessity for fundamental studies of electrocapillary phenomena at the tip-surface junction and their interplay with bias-induced materials responses.

  13. DNA-mediated excitonic upconversion FRET switching

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kellis, Donald L.; Rehn, Sarah M.; Cannon, Brittany L.; Davis, Paul H.; Graugnard, Elton; Lee, Jeunghoon; Yurke, Bernard; Knowlton, William B.

    2015-11-17

    Excitonics is a rapidly expanding field of nanophotonics in which the harvesting of photons, ensuing creation and transport of excitons via Förster resonant energy transfer (FRET), and subsequent charge separation or photon emission has led to the demonstration of excitonic wires, switches, Boolean logic and light harvesting antennas for many applications. FRET funnels excitons down an energy gradient resulting in energy loss with each step along the pathway. Conversely, excitonic energy up conversion via up conversion nanoparticles (UCNPs), although currently inefficient, serves as an energy ratchet to boost the exciton energy. Although FRET-based up conversion has been demonstrated, it suffersmore » from low FRET efficiency and lacks the ability to modulate the FRET. We have engineered an up conversion FRET-based switch by combining lanthanide-doped UCNPs and fluorophores that demonstrates excitonic energy up conversion by nearly a factor of 2, an excited state donor to acceptor FRET efficiency of nearly 25%, and an acceptor fluorophore quantum efficiency that is close to unity. These findings offer a promising path for energy up conversion in nanophotonic applications including artificial light harvesting, excitonic circuits, photovoltaics, nanomedicine, and optoelectronics.« less

  14. DNA-mediated excitonic upconversion FRET switching

    SciTech Connect (OSTI)

    Kellis, Donald L.; Rehn, Sarah M.; Cannon, Brittany L.; Davis, Paul H.; Graugnard, Elton; Lee, Jeunghoon; Yurke, Bernard; Knowlton, William B.

    2015-11-17

    Excitonics is a rapidly expanding field of nanophotonics in which the harvesting of photons, ensuing creation and transport of excitons via Förster resonant energy transfer (FRET), and subsequent charge separation or photon emission has led to the demonstration of excitonic wires, switches, Boolean logic and light harvesting antennas for many applications. FRET funnels excitons down an energy gradient resulting in energy loss with each step along the pathway. Conversely, excitonic energy up conversion via up conversion nanoparticles (UCNPs), although currently inefficient, serves as an energy ratchet to boost the exciton energy. Although FRET-based up conversion has been demonstrated, it suffers from low FRET efficiency and lacks the ability to modulate the FRET. We have engineered an up conversion FRET-based switch by combining lanthanide-doped UCNPs and fluorophores that demonstrates excitonic energy up conversion by nearly a factor of 2, an excited state donor to acceptor FRET efficiency of nearly 25%, and an acceptor fluorophore quantum efficiency that is close to unity. These findings offer a promising path for energy up conversion in nanophotonic applications including artificial light harvesting, excitonic circuits, photovoltaics, nanomedicine, and optoelectronics.

  15. Fractofusion mechanism

    SciTech Connect (OSTI)

    Yasui, K. . Dept. of Physics)

    1992-11-01

    In this paper, the fractofusion mechanism of cold fusion is investigated theoretically. The conditions necessary for fractofusion during the absorption of deuterium atoms by palladium specimens (the condition of so-called cold fusion experiments) is clarified, including crack generation at grain boundaries, the high orientation angle of grains, rapid crack formation, the increase of electrical resistance around a crack, the large width of cracks, and the generation of many cracks. The origin and quantity of the electrical field inside cracks in the conductor are also clarified. By the fractofusion mechanism, the experimental facts that neutron emissions are observed in bursts, that sometimes they coincide with the deformation of a palladium specimen, and that in many experiments excess neutrons were not observed are qualitatively explained. The upper limit of the total fractofusion yields during the absorption of deuterium atoms by palladium specimens are estimated.

  16. Q-switched and mode-locked Er{sup 3+}-doped fibre laser using a single-multi-single fibre filter and piezoelectric

    SciTech Connect (OSTI)

    Ji Wang; Yunjun Zhang; Aotuo Dong; Xiaoxin Xu; Youlun Ju; Baoquan Yao

    2014-04-28

    The active Q-switched and passive mode-locked Er{sup 3+}-doped all-fibre laser is presented. The fibre laser centre wavelength is located at 1563 nm and determined by the homemade singlemulti- single (SMS) in-line fibre filter. The laser spectrum width is nearly 0.1 nm. The active Q-switched mechanism relies on the polarisation state control using a piezoelectric to press a segment of passive fibre on the circular cavity. The nonlinear polarisation rotation technology is used to realise the passive self-started modelocked operation. In the passive mode-locked regimes, the output average power is 2.1 mW, repetition frequency is 11.96 MHz, and single pulse energy is 0.18 nJ. With the 100-Hz Q-switched regimes running, the output average power is 1.5 mW. The total Q-switched pulse width is 15 μs, and every Q-switched pulse is made up by several tens of mode-locked peak pulses. The calculated output pulse energy of the Q-switched fibre laser is about 15 μJ, and the energy of every mode-locked pulse is about 64–68 nJ during a Q-switched pulse taking into account the power fraction propagating between pulses. (lasers)

  17. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    SciTech Connect (OSTI)

    Khan, Asif Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-06-30

    A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  18. DC switching regulated power supply for driving an inductive load

    DOE Patents [OSTI]

    Dyer, G.R.

    1983-11-29

    A dc switching regulated power supply for driving an inductive load is provided. The regulator basic circuit is a bridge arrangement of diodes and transistors. First and second opposite legs of the bridge are formed by first and second parallel-connected transistor arrays, respectively, while the third and fourth legs of the bridge are formed by appropriately connected first and second parallel connected diode arrays, respectively. A dc power supply is connected to the input of the bridge and the output is connected to the load. A servo controller is provided to control the switching rate of the transistors to maintain a desired current to the load. The regulator may be operated in three stages or modes: (1) for current runup in the load, both first and second transistor switch arrays are turned on and current is supplied to the load through both transistor arrays. (2) When load current reaches the desired level, the first switch is turned off, and load current flywheels through the second switch array and the fourth leg diode array connecting the second switch array in series with the load. Current is maintained by alternating between modes 1 and 2 at a suitable duty cycle and switching rate set by the controller. (3) Rapid current rundown is accomplished by turning both switch arrays off, allowing load current to be dumped back into the source through the third and fourth diode arrays connecting the source in series opposition with the load to recover energy from the inductive load.

  19. DC switching regulated power supply for driving an inductive load

    DOE Patents [OSTI]

    Dyer, George R.

    1986-01-01

    A power supply for driving an inductive load current from a dc power supply hrough a regulator circuit including a bridge arrangement of diodes and switching transistors controlled by a servo controller which regulates switching in response to the load current to maintain a selected load current. First and second opposite legs of the bridge are formed by first and second parallel-connected transistor arrays, respectively, while the third and fourth legs of the bridge are formed by appropriately connected first and second parallel connected diode arrays, respectively. The regulator may be operated in three "stages" or modes: (1) For current runup in the load, both first and second transistor switch arrays are turned "on" and current is supplied to the load through both transistor arrays. (2) When load current reaches the desired level, the first switch is turned "off", and load current "flywheels" through the second switch array and the fourth leg diode array connecting the second switch array in series with the load. Current is maintained by alternating between modes 1 and 2 at a suitable duty cycle and switching rate set by the controller. (3) Rapid current rundown is accomplished by turning both switch arrays "off", allowing load current to be dumped back into the source through the third and fourth diode arrays connecting the source in series opposition with the load to recover energy from the inductive load. The three operating states are controlled automatically by the controller.

  20. Intrinsic SiO{sub x}-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

    SciTech Connect (OSTI)

    Chang, Yao-Feng Chen, Ying-Chen; Chen, Yen-Ting; Wang, Yanzhen; Xue, Fei; Zhou, Fei; Lee, Jack C.; Fowler, Burt

    2014-07-28

    Multilevel programing and charge transport characteristics of intrinsic SiO{sub x}-based resistive switching memory are investigated using TaN/SiO{sub x}/n{sup ++}Si (MIS) and TiW/SiO{sub x}/TiW (MIM) device structures. Current transport characteristics of high- and low-resistance states (HRS and LRS) are studied in both device structures during multilevel operation. Analysis of device thermal response demonstrates that the effective electron energy barrier is strongly dependent on the resistance of the programed state, with estimates of 0.1?eV in the LRS and 0.6?eV in the HRS. Linear data fitting and conductance analyses indicate Poole-Frenkel emission or hopping conductance in the low-voltage region, whereas Fowler-Nordheim (F-N) or trap-assisted tunneling (TAT) is indicated at moderate voltage. Characterizations using hopping transport lead to hopping distance estimates of ?1?nm in the LRS for both device structures. Relative permittivity values (?{sub r}) were extracted using the Poole-Frenkel formulism and estimates of local filament temperature, where ?{sub r} values were ?80 in the LRS and ?4 in the HRS, suggesting a strongly polarized medium in the LRS. The onset of F-N tunneling or TAT corresponds to an observed overshoot in the I-V response with an estimated threshold of 1.6??0.2?V, in good agreement with reported electro-luminescence results for LRS devices. Resistive switching is discussed in terms of electrochemical reactions between common SiO{sub 2} defects, and specific defect energy levels are assigned to the dominant transitions in the I-V response. The overshoot response in the LRS is consistent with TAT through either the E?' oxygen vacancy or the hydrogen bridge defect, both of which are reported to have an effective bandgap of 1.7?eV. The SET threshold at ?2.5?V is modeled as hydrogen release from the (Si-H){sub 2} defect to generate the hydrogen bridge, and the RESET transition is modeled as an electrochemical reaction that re-forms (Si

  1. High voltage photo switch package module

    DOE Patents [OSTI]

    Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen E

    2014-02-18

    A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces, and at least one light-input surface. First metallic layers are formed on the electrode-interface surfaces, and one or more optical waveguides having input and output ends are bonded to the substrate so that the output end of each waveguide is bonded to a corresponding one of the light-input surfaces of the photo-conductive substrate. This forms a waveguide-substrate interface for coupling light into the photo-conductive wafer. A dielectric material such as epoxy is then used to encapsulate the photo-conductive substrate and optical waveguide so that only the metallic layers and the input end of the optical waveguide are exposed. Second metallic layers are then formed on the first metallic layers so that the waveguide-substrate interface is positioned under the second metallic layers.

  2. Path planning during combustion mode switch

    DOE Patents [OSTI]

    Jiang, Li; Ravi, Nikhil

    2015-12-29

    Systems and methods are provided for transitioning between a first combustion mode and a second combustion mode in an internal combustion engine. A current operating point of the engine is identified and a target operating point for the internal combustion engine in the second combustion mode is also determined. A predefined optimized transition operating point is selected from memory. While operating in the first combustion mode, one or more engine actuator settings are adjusted to cause the operating point of the internal combustion engine to approach the selected optimized transition operating point. When the engine is operating at the selected optimized transition operating point, the combustion mode is switched from the first combustion mode to the second combustion mode. While operating in the second combustion mode, one or more engine actuator settings are adjusted to cause the operating point of the internal combustion to approach the target operating point.

  3. All fiber passively Q-switched laser

    DOE Patents [OSTI]

    Soh, Daniel B. S.; Bisson, Scott E

    2015-05-12

    Embodiments relate to an all fiber passively Q-switched laser. The laser includes a large core doped gain fiber having a first end. The large core doped gain fiber has a first core diameter. The laser includes a doped single mode fiber (saturable absorber) having a second core diameter that is smaller than the first core diameter. The laser includes a mode transformer positioned between a second end of the large core doped gain fiber and a first end of the single mode fiber. The mode transformer has a core diameter that transitions from the first core diameter to the second core diameter and filters out light modes not supported by the doped single mode fiber. The laser includes a laser cavity formed between a first reflector positioned adjacent the large core doped gain fiber and a second reflector positioned adjacent the doped single mode fiber.

  4. Permanent-magnet switched-flux machine

    DOE Patents [OSTI]

    Trzynadlowski, Andrzej M.; Qin, Ling

    2011-06-14

    A permanent-magnet switched-flux (PMSF) device has an outer rotor mounted to a shaft about a central axis extending axially through the PMSF device. First and second pluralities of permanent-magnets (PMs) are respectively mounted in first and second circles, radially outwardly in first and second transverse planes extending from first and second sections of the central axis adjacent to an inner surface of the outer rotor. An inner stator is coupled to the shaft and has i) a stator core having a core axis co-axial with the central axis; and ii) first and second pluralities of stator poles mounted in first and second circles, radially outwardly from the stator core axis in the first and second transverse planes. The first and second pluralities of PMs each include PMs of alternating polarity.

  5. Permanent-magnet switched-flux machine

    DOE Patents [OSTI]

    Trzynadlowski, Andrzej M.; Qin, Ling

    2010-01-12

    A permanent-magnet switched-flux (PMSF) device has a ferromagnetic outer stator mounted to a shaft about a central axis extending axially through the PMSF device. Pluralities of top and bottom stator poles are respectively mounted in first and second circles, radially outwardly in first and second transverse planes extending from first and second sections of the central axis adjacent to an inner surface of the ferromagnetic outer stator. A ferromagnetic inner rotor is coupled to the shaft and has i) a rotor core having a core axis co-axial with the central axis; and ii) first and second discs having respective outer edges with first and second pluralities of permanent magnets (PMs) mounted in first and second circles, radially outwardly from the rotor core axis in the first and second transverse planes. The first and second pluralities of PMs each include PMs of alternating polarity.

  6. Permanent-magnet switched-flux machine

    DOE Patents [OSTI]

    Trzynadlowski, Andrzej M.; Qin, Ling

    2012-02-21

    A permanent-magnet switched-flux (PMSF) device has an outer rotor mounted to a shaft about a central axis extending axially through the PMSF device. First and second pluralities of permanent-magnets (PMs) are respectively mounted in first and second circles, radially outwardly in first and second transverse planes extending from first and second sections of the central axis adjacent to an inner surface of the outer rotor. An inner stator is coupled to the shaft and has i) a stator core having a core axis co-axial with the central axis; and ii) first and second pluralities of stator poles mounted in first and second circles, radially outwardly from the stator core axis in the first and second transverse planes. The first and second pluralities of PMs each include PMs of alternating polarity.

  7. Semiconductor switch geometry with electric field shaping

    DOE Patents [OSTI]

    Booth, Rex; Pocha, Michael D.

    1994-01-01

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

  8. Semiconductor switch geometry with electric field shaping

    DOE Patents [OSTI]

    Booth, R.; Pocha, M.D.

    1994-08-23

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

  9. Eddy-current-damped microelectromechanical switch

    DOE Patents [OSTI]

    Christenson, Todd R.; Polosky, Marc A.

    2009-12-15

    A microelectromechanical (MEM) device is disclosed that includes a shuttle suspended for movement above a substrate. A plurality of permanent magnets in the shuttle of the MEM device interact with a metal plate which forms the substrate or a metal portion thereof to provide an eddy-current damping of the shuttle, thereby making the shuttle responsive to changes in acceleration or velocity of the MEM device. Alternately, the permanent magnets can be located in the substrate, and the metal portion can form the shuttle. An electrical switch closure in the MEM device can occur in response to a predetermined acceleration-time event. The MEM device, which can be fabricated either by micromachining or LIGA, can be used for sensing an acceleration or deceleration event (e.g. in automotive applications such as airbag deployment or seat belt retraction).

  10. Eddy-current-damped microelectromechanical switch

    DOE Patents [OSTI]

    Christenson, Todd R.; Polosky, Marc A.

    2007-10-30

    A microelectromechanical (MEM) device is disclosed that includes a shuttle suspended for movement above a substrate. A plurality of permanent magnets in the shuttle of the MEM device interact with a metal plate which forms the substrate or a metal portion thereof to provide an eddy-current damping of the shuttle, thereby making the shuttle responsive to changes in acceleration or velocity of the MEM device. Alternately, the permanent magnets can be located in the substrate, and the metal portion can form the shuttle. An electrical switch closure in the MEM device can occur in response to a predetermined acceleration-time event. The MEM device, which can be fabricated either by micromachining or LIGA, can be used for sensing an acceleration or deceleration event (e.g. in automotive applications such as airbag deployment or seat belt retraction).

  11. Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

    SciTech Connect (OSTI)

    Sharath, S. U. Kurian, J.; Komissinskiy, P.; Hildebrandt, E.; Alff, L.; Bertaud, T.; Walczyk, C.; Calka, P.; Schroeder, T.

    2014-08-18

    The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3?V is observed up to 200?nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

  12. Resistance switching in epitaxial SrCoO{sub x} thin films

    SciTech Connect (OSTI)

    Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

    2014-08-11

    We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO{sub 3} (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO{sub 2.5}) and conducting perovskite (SrCoO{sub 3−δ}) depending on the oxygen content. The current–voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO{sub x} thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO{sub 2.5}.

  13. A Monte Carlo simulation for bipolar resistive memory switching in large band-gap oxides

    SciTech Connect (OSTI)

    Hur, Ji-Hyun E-mail: jeonsh@korea.ac.kr; Lee, Dongsoo; Jeon, Sanghun E-mail: jeonsh@korea.ac.kr

    2015-11-16

    A model that describes bilayered bipolar resistive random access memory (BL-ReRAM) switching in oxide with a large band gap is presented. It is shown that, owing to the large energy barrier between the electrode and thin oxide layer, the electronic conduction is dominated by trap-assisted tunneling. The model is composed of an atomic oxygen vacancy migration model and an electronic tunneling conduction model. We also show experimentally observed three-resistance-level switching in Ru/ZrO{sub 2}/TaO{sub x} BL-ReRAM that can be explained by the two types of traps, i.e., shallow and deep traps in ZrO{sub 2}.

  14. A spin light emitting diode incorporating ability of electrical helicity switching

    SciTech Connect (OSTI)

    Nishizawa, N., E-mail: nishizawa@isl.titech.ac.jp; Nishibayashi, K.; Munekata, H. [Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-J3-15 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2014-03-17

    Fabrication and optical characteristics of a spin light-emitting-diode (spin-LED) having dual spin-injection electrodes with anti-parallel magnetization configuration are reported. Alternating a current between the two electrodes using a computer-driven current source has led us to the observation of helicity switching of circular polarization at the frequency of 1 kHz. Neither external magnetic fields nor optical delay modulators were used. Sending dc-currents to both electrodes with appropriate ratio has resulted in continuous variation of circular polarization between the two opposite helicity, including the null polarization. These results suggest that the tested spin-LED has the feasibility of a monolithic light source whose circular polarization can be switched or continuously tuned all electrically.

  15. Switching of bound vector solitons for the coupled nonlinear Schroedinger equations with nonhomogenously stochastic perturbations

    SciTech Connect (OSTI)

    Sun Zhiyuan; Yu Xin; Liu Ying; Gao Yitian

    2012-12-15

    We investigate the dynamics of the bound vector solitons (BVSs) for the coupled nonlinear Schroedinger equations with the nonhomogenously stochastic perturbations added on their dispersion terms. Soliton switching (besides soliton breakup) can be observed between the two components of the BVSs. Rate of the maximum switched energy (absolute values) within the fixed propagation distance (about 10 periods of the BVSs) enhances in the sense of statistics when the amplitudes of stochastic perturbations increase. Additionally, it is revealed that the BVSs with enhanced coherence are more robust against the perturbations with nonhomogenous stochasticity. Diagram describing the approximate borders of the splitting and non-splitting areas is also given. Our results might be helpful in dynamics of the BVSs with stochastic noises in nonlinear optical fibers or with stochastic quantum fluctuations in Bose-Einstein condensates.

  16. Reduced Switching Frequency Active Harmonic Elimination for Multilevel Converters

    SciTech Connect (OSTI)

    Du, Zhong; Tolbert, Leon M; Chiasson, John N; Ozpineci, Burak

    2008-01-01

    This paper presents a reduced switching-frequency active-harmonic-elimination method (RAHEM) to eliminate any number of specific order harmonics of multilevel converters. First, resultant theory is applied to transcendental equations to eliminate low-order harmonics and to determine switching angles for a fundamental frequency-switching scheme. Next, based on the number of harmonics to be eliminated, Newton climbing method is applied to transcendental equations to eliminate high-order harmonics and to determine switching angles for the fundamental frequency-switching scheme. Third, the magnitudes and phases of the residual lower order harmonics are computed, generated, and subtracted from the original voltage waveform to eliminate these low-order harmonics. Compared to the active-harmonic-elimination method (AHEM), which generates square waves to cancel high-order harmonics, RAHEM has lower switching frequency. The simulation results show that the method can effectively eliminate all the specific harmonics, and a low total harmonic distortion (THD) near sine wave is produced. An experimental 11-level H-bridge multilevel converter with a field-programmable gate-array controller is employed to experimentally validate the method. The experimental results show that RAHEM does effectively eliminate any number of specific harmonics, and the output voltage waveform has low switching frequency and low THD.

  17. Spintronic switches for ultra low energy global interconnects

    SciTech Connect (OSTI)

    Sharad, Mrigank Roy, Kaushik

    2014-05-07

    We present ultra-low energy interconnect design using nano-scale spin-torque (ST) switches for global data-links. Emerging spin-torque phenomena can lead to ultra-low-voltage, high-speed current-mode magnetic-switches. ST-switches can simultaneously provide large trans-impedance gain by employing magnetic tunnel junctions, to convert current-mode signals into large-swing voltage levels. Such device-characteristics can be used in the design of energy-efficient current-mode global interconnects.

  18. Capacitive microelectromechanical switches with dynamic soft-landing

    DOE Patents [OSTI]

    Jain, Ankit; Alam, Muhammad Ashraful; Nair, Pradeep R.

    2015-10-13

    A microelectromechanical system (MEMS)-based electrical switch. The electrical switch includes a moveable electrode, a dielectric layer positioned adjacent the moveable electrode on a first side of the dielectric layer and spaced apart from the moveable electrode when the moveable electrode is in an inactivated position and in contact with the moveable electrode when the moveable electrode is in an activated position, and a substrate attached to the dielectric layer on a second side opposite to the first side, the moveable electrode is configured to brake prior to coming in contact with the dielectric layer when the moveable electrode is switched between the inactivated state and the activated state.

  19. Electrical Breakdown Physics in Photoconductive Semiconductor Switches (PCSS).

    SciTech Connect (OSTI)

    Mar, Alan; Zutavern, Fred J.; Vawter, Gregory A.; Hjalmarson, Harold P.; Gallegos, Richard Joseph; Bigman, Verle Howard

    2016-01-01

    Advanced switching devices with long lifetime will be critical components for Linear Transformer Drivers (LTDs) in next-generation accelerators. LTD designs employ high switch counts. With current gas switch technology at %7E10e3 shot life, a potential game-changer would be the development of a reliable low-impedance (%3C35nh) optically-triggered compact solid-state switch capable of switching 200kV and 50kA with 10e5 shotlife or better. Other applications of this technology, are pulse shaping programmable systems for dynamic material studies (Z-next, Genesis), efficient pulsed power systems for biofuel feedstock, short pulse (10 ns) accelerator designs for the Defense Threat Reduction Agency (DTRA), and sprytron replacements in NW firing sets. This LDRD project has succeeded in developing new optically-triggered photoconductive semiconductor switch (PCSS) designs that show great promise for scaling to modules capable of 200kV (DC) and 5kA current that can be stacked in parallel to achieve 100's of kA with 10e5 shot lifetime. . Executive Summary Advanced switching devices with long lifetime will be critical components for Linear Transformer Drivers (LTDs) in next-generation accelerators. LTD designs employ high switch counts. With current gas switch technology at %7E10e3 shot life, a potential game-changer would be the development of a reliable low-impedance (%3C35nh) optically-triggered compact solid-state switch capable of switching 200kV and 50kA with 10e5 shotlife or better. Other applications of this technology, are pulse shaping programmable systems for dynamic material studies (Z-next, Genesis), efficient pulsed power systems for biofuel feedstock, short pulse (10 ns) accelerator designs for the Defense Threat Reduction Agency (DTRA), and sprytron replacements in NW firing sets. This LDRD project has succeeded in developing new optically-triggered photoconductive semiconductor switch (PCSS) designs that show great promise for scaling to modules capable

  20. Metal-to-insulator switching in quantum anomalous Hall states

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kou, Xufeng; Pan, Lei; Wang, Jing; Fan, Yabin; Choi, Eun Sang; Lee, Wei -Li; Nie, Tianxiao; Murata, Koichi; Shao, Qiming; Zhang, Shou -Cheng; et al

    2015-10-07

    After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr0.12Bi0.26Sb0.62)2Te3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phase diagram is confirmed through themore » angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. Additionally, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.« less

  1. Metal-to-insulator switching in quantum anomalous Hall states

    SciTech Connect (OSTI)

    Kou, Xufeng; Pan, Lei; Wang, Jing; Fan, Yabin; Choi, Eun Sang; Lee, Wei -Li; Nie, Tianxiao; Murata, Koichi; Shao, Qiming; Zhang, Shou -Cheng; Wang, Kang L.

    2015-10-07

    After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr0.12Bi0.26Sb0.62)2Te3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phase diagram is confirmed through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. Additionally, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.

  2. Spark gap device for precise switching

    DOE Patents [OSTI]

    Boettcher, G.E.

    1984-10-02

    A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations. 3 figs.

  3. Spark gap device for precise switching

    DOE Patents [OSTI]

    Boettcher, Gordon E.

    1984-01-01

    A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centrigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations.

  4. Hypersensitive switching behavior in the Q-phase of unconventional...

    Office of Scientific and Technical Information (OSTI)

    Title: Hypersensitive switching behavior in the Q-phase of unconventional superconductor CeCoIn5 Authors: Kim, Duk Young 1 ; Lin, Shizeng 1 ; Weickert, Franziska 2 ; Bauer, ...

  5. Methods for resistive switching of memristors (Patent) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    Title: Methods for resistive switching of memristors The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as ...

  6. Switching behaviors of graphene-boron nitride nanotube heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; Amorim, Rodrigo G.; Pandey, Ravindra; Tiwari, Bishnu; Zhang, Dongyan; Liu, Yang; Li, An -Ping; Yap, Yoke Khin

    2015-07-20

    High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5more » V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.« less

  7. Get Current: Switch on Clean Energy Activity Book

    SciTech Connect (OSTI)

    2014-06-01

    Switching on clean energy technologies means strengthening the economy while protecting the environment. This activity book for all ages promotes energy awareness, with facts on different types of energy and a variety of puzzles in an energy theme.

  8. Resistive switching phenomena: A review of statistical physics...

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Search Results Journal Article: Resistive switching phenomena: A review of ... Export Metadata Endnote Excel CSV XML Save to My Library Send to Email Send to Email ...

  9. Switching behaviors of graphene-boron nitride nanotube heterojunctions

    SciTech Connect (OSTI)

    Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; Amorim, Rodrigo G.; Pandey, Ravindra; Tiwari, Bishnu; Zhang, Dongyan; Liu, Yang; Li, An -Ping; Yap, Yoke Khin

    2015-07-20

    High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5 V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.

  10. High-voltage, low-inductance gas switch

    DOE Patents [OSTI]

    Gruner, Frederick R.; Stygar, William A.

    2016-03-22

    A low-inductance, air-insulated gas switch uses a de-enhanced annular trigger ring disposed between two opposing high voltage electrodes. The switch is DC chargeable to 200 kilovolts or more, triggerable, has low jitter (5 ns or less), has pre-fire and no-fire rates of no more than one in 10,000 shots, and has a lifetime of greater than 100,000 shots. Importantly, the switch also has a low inductance (less than 60 nH) and the ability to conduct currents with less than 100 ns rise times. The switch can be used with linear transformer drives or other pulsed-power systems.

  11. Neutrino Observations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Observations from the Sudbury Neutrino Observatory A.W.P. Poon 1 Institute for Nuclear and Particle Astrophysics, Lawrence Berkeley National Laboratory, Berkeley, CA, USA Abstract. The Sudbury Neutrino Observatory (SNO) is a water imaging Cherenkov detector. Its usage of 1000 metric tons of D 2 O as target allows the SNO detector to make a solar-model independent test of the neutrino oscillation hypothesis by simultaneously measuring the solar ν e flux and the total flux of all active neutrino

  12. Flipping the switch on magnetism in strontium titanate

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Flipping the switch on magnetism in strontium titanate Flipping the switch on magnetism in strontium titanate Researchers have found a way to magnetize this material using light, an effect that persists for hours at a time. March 27, 2014 Los Alamos postdoctoral fellow William Rice holds a crystal of strontium titanate up to the light. This crystal, previously thought to be nonmagnetic, turns out to have surprising magnetic features when treated with special "circularly polarized"

  13. Electronically commutated serial-parallel switching for motor windings

    DOE Patents [OSTI]

    Hsu, John S.

    2012-03-27

    A method and a circuit for controlling an ac machine comprises controlling a full bridge network of commutation switches which are connected between a multiphase voltage source and the phase windings to switch the phase windings between a parallel connection and a series connection while providing commutation discharge paths for electrical current resulting from inductance in the phase windings. This provides extra torque for starting a vehicle from lower battery current.

  14. All-optical switching in optically induced nonlinear waveguide couplers

    SciTech Connect (OSTI)

    Diebel, Falko Boguslawski, Martin; Rose, Patrick; Denz, Cornelia; Leykam, Daniel; Desyatnikov, Anton S.

    2014-06-30

    We experimentally demonstrate all-optical vortex switching in nonlinear coupled waveguide arrays optically induced in photorefractive media. Our technique is based on multiplexing of nondiffracting Bessel beams to induce various types of waveguide configurations. Using double- and quadruple-well potentials, we demonstrate precise control over the coupling strength between waveguides, the linear and nonlinear dynamics and symmetry-breaking bifurcations of guided light, and a power-controlled optical vortex switch.

  15. New Mathematical Method Reveals Where Genes Switch On or Off

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Mathematical Method Reveals Where Genes Switch On or Off New Mathematical Method Reveals Where Genes Switch On or Off "Compressed sensing" determines atomic-level energy potentials with accuracy approaching experimental measurement February 22, 2012 John Hules, JAHules@lbl.gov, +1 510 486 6008 Figure 1. Helix-turn-helix (HTH) proteins are the most widely distributed family of DNA-binding proteins, occurring in all biological kingdoms. This image shows a lambda repressor HTH

  16. Beyond the Light Switch - Joint Center for Energy Storage Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    April 22, 2015, Videos Beyond the Light Switch On this edition of Beyond the Light Switch, aired on PBS in April 2015, the program focuses on the electrification of the American economy - in transportation, shipping, airlines, even in the U.S. military and its importance to our national security. Scientific American's David Biello came to Argonne (34 min. into program) to discuss the research required to meet the nation's energy storage goals.

  17. Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters

    SciTech Connect (OSTI)

    2012-02-13

    Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

  18. Multi-line triggering and interdigitated electrode structure for photoconductive semiconductor switches

    DOE Patents [OSTI]

    Mar, Alan (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM); Loubriel, Guillermo (Albuquerque, NM)

    2007-02-06

    An improved photoconductive semiconductor switch comprises multiple-line optical triggering of multiple, high-current parallel filaments between the switch electrodes. The switch can also have a multi-gap, interdigitated electrode for the generation of additional parallel filaments. Multi-line triggering can increase the switch lifetime at high currents by increasing the number of current filaments and reducing the current density at the contact electrodes in a controlled manner. Furthermore, the improved switch can mitigate the degradation of switching conditions with increased number of firings of the switch.

  19. The electrical and mechanical properties of Au-V and Au-V{sub...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: The electrical and mechanical properties of Au-V and Au-Vsub 2Osub 5 thin films for wear-resistant RF MEMS switches Citation Details In-Document Search Title: ...

  20. Nano-optical observation of cascade switching in a parallel superconducting nanowire single photon detector

    SciTech Connect (OSTI)

    Heath, Robert M. Tanner, Michael G.; Casaburi, Alessandro; Hadfield, Robert H.; Webster, Mark G.; San Emeterio Alvarez, Lara; Jiang, Weitao; Barber, Zoe H.; Warburton, Richard J.

    2014-02-10

    The device physics of parallel-wire superconducting nanowire single photon detectors is based on a cascade process. Using nano-optical techniques and a parallel wire device with spatially separate pixels, we explicitly demonstrate the single- and multi-photon triggering regimes. We develop a model for describing efficiency of a detector operating in the arm-trigger regime. We investigate the timing response of the detector when illuminating a single pixel and two pixels. We see a change in the active area of the detector between the two regimes and find the two-pixel trigger regime to have a faster timing response than the one-pixel regime.

  1. Electron tunnelling through single azurin molecules can be on/off switched by voltage pulses

    SciTech Connect (OSTI)

    Baldacchini, Chiara; Kumar, Vivek; Bizzarri, Anna Rita; Cannistraro, Salvatore

    2015-05-04

    Redox metalloproteins are emerging as promising candidates for future bio-optoelectronic and nano-biomemory devices, and the control of their electron transfer properties through external signals is still a crucial task. Here, we show that a reversible on/off switching of the electron current tunnelling through a single protein can be achieved in azurin protein molecules adsorbed on gold surfaces, by applying appropriate voltage pulses through a scanning tunnelling microscope tip. The observed changes in the hybrid system tunnelling properties are discussed in terms of long-sustained charging of the protein milieu.

  2. Ferroelectric opening switches for large-scale pulsed power drivers.

    SciTech Connect (OSTI)

    Brennecka, Geoffrey L.; Rudys, Joseph Matthew; Reed, Kim Warren; Pena, Gary Edward; Tuttle, Bruce Andrew; Glover, Steven Frank

    2009-11-01

    Fast electrical energy storage or Voltage-Driven Technology (VDT) has dominated fast, high-voltage pulsed power systems for the past six decades. Fast magnetic energy storage or Current-Driven Technology (CDT) is characterized by 10,000 X higher energy density than VDT and has a great number of other substantial advantages, but it has all but been neglected for all of these decades. The uniform explanation for neglect of CDT technology is invariably that the industry has never been able to make an effective opening switch, which is essential for the use of CDT. Most approaches to opening switches have involved plasma of one sort or another. On a large scale, gaseous plasmas have been used as a conductor to bridge the switch electrodes that provides an opening function when the current wave front propagates through to the output end of the plasma and fully magnetizes the plasma - this is called a Plasma Opening Switch (POS). Opening can be triggered in a POS using a magnetic field to push the plasma out of the A-K gap - this is called a Magnetically Controlled Plasma Opening Switch (MCPOS). On a small scale, depletion of electron plasmas in semiconductor devices is used to affect opening switch behavior, but these devices are relatively low voltage and low current compared to the hundreds of kilo-volts and tens of kilo-amperes of interest to pulsed power. This work is an investigation into an entirely new approach to opening switch technology that utilizes new materials in new ways. The new materials are Ferroelectrics and using them as an opening switch is a stark contrast to their traditional applications in optics and transducer applications. Emphasis is on use of high performance ferroelectrics with the objective of developing an opening switch that would be suitable for large scale pulsed power applications. Over the course of exploring this new ground, we have discovered new behaviors and properties of these materials that were here to fore unknown. Some of

  3. Bifurcation to square-wave switching in orthogonally delay-coupled semiconductor lasers: Theory and experiment

    SciTech Connect (OSTI)

    Masoller, C.; Sukow, D.; Gavrielides, A.

    2011-08-15

    We analyze the dynamics of two semiconductor lasers with so-called orthogonal time-delayed mutual coupling: the dominant TE (x) modes of each laser are rotated by 90 deg. (therefore, TM polarization or y) before being coupled to the other laser. Although this laser system allows for steady-state emission in either one or in both polarization modes, it may also exhibit stable time-periodic dynamics including square waveforms. A theoretical mapping of the switching dynamics unveils the region in parameter space where one expects to observe long-term time-periodic mode switching. Detailed numerical simulations illustrate the role played by the coupling strength, the mode frequency detuning, or the mode gain to loss difference. We complement our theoretical study with several experiments and measurements. We present time series and intensity spectra associated with the characteristics of the square waves and other waveforms observed as a function of the strength of the delay coupling. The experimental observations are in very good agreement with the analysis and the numerical results.

  4. Detection and characterization of multi-filament evolution during resistive switching

    SciTech Connect (OSTI)

    Mickel, Patrick R.; Lohn, Andrew J.; Marinella, Matthew J.

    2014-08-05

    We present resistive switching data in TaOx memristors displaying signatures of multi-filament switching modes, and develop a geometrically defined equivalent circuit to separate the individual resistances and powers dissipated in each filament. Using these resolved values, we compare the individual switching curves of each filament and demonstrate that the switching data of each filament collapse onto a single switching curve determined by the analytical steady-state resistive switching solution for filamentary switching. Analyzing our results in terms of this solution, we determine the switching temperature, heat flow, conductivity, and time evolving areas of each filament during resistive switching. Finally, we discuss operational modes which may limit the formation of additional conducting filaments, potentially leading to increased device endurance.

  5. Detection and characterization of multi-filament evolution during resistive switching

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mickel, Patrick R.; Lohn, Andrew J.; Marinella, Matthew J.

    2014-08-05

    We present resistive switching data in TaOx memristors displaying signatures of multi-filament switching modes, and develop a geometrically defined equivalent circuit to separate the individual resistances and powers dissipated in each filament. Using these resolved values, we compare the individual switching curves of each filament and demonstrate that the switching data of each filament collapse onto a single switching curve determined by the analytical steady-state resistive switching solution for filamentary switching. Analyzing our results in terms of this solution, we determine the switching temperature, heat flow, conductivity, and time evolving areas of each filament during resistive switching. Finally, we discussmore » operational modes which may limit the formation of additional conducting filaments, potentially leading to increased device endurance.« less

  6. Surface plasmon polariton assisted optical switching in noble bimetallic nanoparticle system

    SciTech Connect (OSTI)

    Dhara, Sandip E-mail: chenkh@pub.iams.sinica.edu.tw; Lu, C.-Y.; Tu, W.-S.; Magudapathy, P.; Huang, Y.-F.; Chen, K.-H. E-mail: chenkh@pub.iams.sinica.edu.tw

    2015-01-12

    Photoresponse of bimetallic Au-Ag nanoparticle embedded soda glass (Au-Ag@SG) substrate is reported for surface plasmon assisted optical switching using 808 nm excitation. Au-Ag@SG system is made by an ion beam technique where Ag{sup +} is introduced first in the soda glass matrix by ion exchange technique. Subsequently, 400 keV Au{sup +} is implanted in the sample for different fluences, which is followed by an ion beam annealing process using 1 MeV Si{sup +} at a fixed fluence of 2 × 10{sup 16} ions·cm{sup −2}. Characteristic surface plasmon resonance (SPR) peaks around 400 and 550 nm provided evidence for the presence of Au and Ag nanoparticles. An optical switching in the Au-Ag@SG system with 808 nm, which is away from the characteristic SPR peaks of Ag and Au nanoparticles, suggests the possible role of two photon absorption (TPA) owing to the presence of interacting electric dipole in these systems. The role of surface plasmon polariton is emphasized for the propagation of electronic carrier belonging to the conduction electron of Au-Ag system in understanding the observed photoresponse. Unique excitation dependent photoresponse measurements confirm the possible role of TPA process. A competitive interband and intraband transitions in the bimetallic system of Au and Ag, which may be primarily responsible for the observation, are validated qualitatively using finite difference time domain calculations where inter-particle separation of Au and Ag plays an important role. Thus, a smart way of optical switching can be envisaged in noble bimetallic nanocluster system where long wavelength with higher skin depth can be used for communication purpose.

  7. Utilizing zero-sequence switchings for reversible converters

    DOE Patents [OSTI]

    Hsu, John S.; Su, Gui-Jia; Adams, Donald J.; Nagashima, James M.; Stancu, Constantin; Carlson, Douglas S.; Smith, Gregory S.

    2004-12-14

    A method for providing additional dc inputs or outputs (49, 59) from a dc-to-ac inverter (10) for controlling motor loads (60) comprises deriving zero-sequence components (V.sub.ao, V.sub.bo, and V.sub.co) from the inverter (10) through additional circuit branches with power switching devices (23, 44, 46), transforming the voltage between a high voltage and a low voltage using a transformer or motor (42, 50), converting the low voltage between ac and dc using a rectifier (41, 51) or an H-bridge (61), and providing at least one low voltage dc input or output (49, 59). The transformation of the ac voltage may be either single phase or three phase. Where less than a 100% duty cycle is acceptable, a two-phase modulation of the switching signals controlling the inverter (10) reduces switching losses in the inverter (10). A plurality of circuits for carrying out the invention are also disclosed.

  8. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; Kalinin, Sergei V; Lai, Keji; Demkov, Alexander A.

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  9. Enhancement of Spin-transfer torque switching via resonant tunneling

    SciTech Connect (OSTI)

    Chatterji, Niladri; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

    2014-12-08

    We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.

  10. Spark gap switch system with condensable dielectric gas

    DOE Patents [OSTI]

    Thayer, III, William J.

    1991-01-01

    A spark gap switch system is disclosed which is capable of operating at a high pulse rate comprising an insulated switch housing having a purging gas entrance port and a gas exit port, a pair of spaced apart electrodes each having one end thereof within the housing and defining a spark gap therebetween, an easily condensable and preferably low molecular weight insulating gas flowing through the switch housing from the housing, a heat exchanger/condenser for condensing the insulating gas after it exits from the housing, a pump for recirculating the condensed insulating gas as a liquid back to the housing, and a heater exchanger/evaporator to vaporize at least a portion of the condensed insulating gas back into a vapor prior to flowing the insulating gas back into the housing.

  11. Ferroelectric Switching by the Grounded Scanning Probe Microscopy Tip

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ievlev, Anton; Morozovska, A. N.; Shur, Vladimir Ya.; Kalinin, Sergei V

    2015-01-01

    The process of polarization reversal by the tip of scanning probe microscope was intensively studied for last two decades. Number of the abnormal switching phenomena was reported by the scientific groups worldwide. In particularly it was experimentally and theoretically shown that slow dynamics of the surface screening controls kinetics of the ferroelectric switching, backswitching and relaxation and presence of the charges carriers on the sample surface and in the sample bulk significantly change polarization reversal dynamics. Here we experimentally demonstrated practical possibility of the history dependent polarization reversal by the grounded SPM tip. This phenomenon was attributed to induction ofmore » the slowly dissipating charges into the surface of the grounded tip that enables polarization reversal under the action of the produced electric field. Analytical and numerical electrostatic calculations allow additional insight into nontrivial abnormal switching phenomena reported earlier.« less

  12. Ferroelectric Switching by the Grounded Scanning Probe Microscopy Tip

    SciTech Connect (OSTI)

    Ievlev, Anton; Morozovska, A. N.; Shur, Vladimir Ya.; Kalinin, Sergei V

    2015-01-01

    The process of polarization reversal by the tip of scanning probe microscope was intensively studied for last two decades. Number of the abnormal switching phenomena was reported by the scientific groups worldwide. In particularly it was experimentally and theoretically shown that slow dynamics of the surface screening controls kinetics of the ferroelectric switching, backswitching and relaxation and presence of the charges carriers on the sample surface and in the sample bulk significantly change polarization reversal dynamics. Here we experimentally demonstrated practical possibility of the history dependent polarization reversal by the grounded SPM tip. This phenomenon was attributed to induction of the slowly dissipating charges into the surface of the grounded tip that enables polarization reversal under the action of the produced electric field. Analytical and numerical electrostatic calculations allow additional insight into nontrivial abnormal switching phenomena reported earlier.

  13. High voltage switch triggered by a laser-photocathode subsystem

    DOE Patents [OSTI]

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

    2013-01-08

    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  14. Charging characteritiscs of ultrananocrystalline diamond in RF MEMS capacitive switches.

    SciTech Connect (OSTI)

    Sumant, A. V.; Goldsmith, C.; Auciello, O.; Carlisle, J.; Zheng, H.; Hwang, J. C. M.; Palego, C.; Wang, W.; Carpick, R.; Adiga, V.; Datta, A.; Gudeman, C.; O'Brien, S.; Sampath, S.

    2010-05-01

    Modifications to a standard capacitive MEMS switch process have been made to allow the incorporation of ultra-nano-crystalline diamond as the switch dielectric. The impact on electromechanical performance is minimal. However, these devices exhibit uniquely different charging characteristics, with charging and discharging time constants 5-6 orders of magnitude quicker than conventional materials. This operation opens the possibility of devices which have no adverse effects of dielectric charging and can be operated near-continuously in the actuated state without significant degradation in reliability.

  15. Transparent selective illumination means suitable for use in optically activated electrical switches and optically activated electrical switches constructed using same

    DOE Patents [OSTI]

    Wilcox, R.B.

    1991-09-10

    A planar transparent light conducting means and an improved optically activated electrical switch made using the novel light conducting means are disclosed. The light conducting means further comprise light scattering means on one or more opposite planar surfaces thereof to transmit light from the light conducting means into adjacent media and reflective means on other surfaces of the light conducting means not containing the light scattering means. The optically activated electrical switch comprises at least two stacked photoconductive wafers, each having electrodes formed on both surfaces thereof, and separated by the planar transparent light conducting means. The light scattering means on the light conducting means face surfaces of the wafers not covered by the electrodes to transmit light from the light conducting means into the photoconductive wafers to uniformly illuminate and activate the switch. 11 figures.

  16. Transparent selective illumination means suitable for use in optically activated electrical switches and optically activated electrical switches constructed using same

    DOE Patents [OSTI]

    Wilcox, Russell B.

    1991-01-01

    A planar transparent light conducting means and an improved optically activated electrical switch made using the novel light conducting means are disclosed. The light conducting means further comprise light scattering means on one or more opposite planar surfaces thereof to transmit light from the light conducting means into adjacent media and reflective means on other surfaces of the light conducting means not containing the light scattering means. The optically activated electrical switch comprises at least two stacked photoconductive wafers, each having electrodes formed on both surfaces thereof, and separated by the planar transparent light conducting means. The light scattering means on the light conducting means face surfaces of the wafers not covered by the electrodes to transmit light from the light conducting means into the photoconductive wafers to uniformly illuminate and activate the switch.

  17. Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities

    DOE Patents [OSTI]

    Harrison, Neil; Singleton, John; Migliori, Albert

    2008-08-05

    A quantum coherent switch having a substrate formed from a density wave (DW) material capable of having a periodic electron density modulation or spin density modulation, a dielectric layer formed onto a surface of the substrate that is orthogonal to an intrinsic wave vector of the DW material; and structure for applying an external spatially periodic electrostatic potential over the dielectric layer.

  18. Optically-initiated silicon carbide high voltage switch

    DOE Patents [OSTI]

    Caporaso, George J.; Sampayan, Stephen E.; Sullivan, James S.; Sanders, David M.

    2012-02-28

    An improved photoconductive switch having a SIC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

  19. Utility External Disconnect Switch: Practical, Legal, and Technical Reasons to Eliminate the Requirement

    Broader source: Energy.gov [DOE]

    This report documents the safe operation of PV systems without a utility external disconnect switch in several large jurisdictions. It includes recommendations for regulators contemplating utility external disconnect switch requirements.

  20. Multiphase soft switched DC/DC converter and active control technique...

    Office of Scientific and Technical Information (OSTI)

    Each primary coil connects a full-bridge circuit comprising two switches on two legs, the primary coil being connected between the switches on each leg, each full-bridge circuit ...

  1. Reversible piezomagnetoelectric switching in bulk polycrystalline ceramics

    SciTech Connect (OSTI)

    Stevenson, T. Bennett, J.; Brown, A. P.; Wines, T.; Bell, A. J.; Comyn, T. P.; Smith, R. I.

    2014-08-01

    Magnetoelectric (ME) coupling in materials offer tremendous advantages in device functionality enabling technologies including advanced electronic memory, combining electronic speed, and efficiency with magnetic robustness. However, low cost polycrystalline ME materials are excluded from most commercial applications, operating only at cryogenic temperatures, impractically large electric/magnetic fields, or with low ME coefficients (1-100 mV/cm Oe). Despite this, the technological potential of single compound ME coupling has continued to drive research into multiferroics over the last two decades. Here we show that by manipulating the large induced atomic strain within the polycrystalline, room temperature multiferroic compound 0.7BiFeO{sub 3}–0.3PbTiO{sub 3}, we can induce a reversible, piezoelectric strain controlled ME effect. Employing an in situ neutron diffraction experiment, we have demonstrated that this piezomagnetoelectric effect manifests with an applied electric field >8 kV/mm at the onset of piezoelectric strain, engineered in to the compound by crystallographic phase mixing. This produces a remarkable intrinsic ME coefficient of 1276 mV/cm Oe, due to a strain driven modification to the oxygen sub-lattice, inducing an increase in magnetic moment per Fe{sup 3+} ion of +0.142 μ{sub B}. This work provides a framework for investigations into strain engineered nanostructures to realize low-cost ME devices designed from the atoms up, as well as contributing to the deeper understanding of single phase ME coupling mechanisms.

  2. The effects of mobile ATM switches on PNNI peer group operation

    SciTech Connect (OSTI)

    Martinez, L.; Sholander, P.; Tolendino, L.

    1997-04-01

    This contribution discusses why, and how, mobile networks and mobile switches might be discussed during Phase 1 of the WATM standards process. Next, it reviews mobile routers within Mobile IP. That IP mobility architecture may not apply to the proposed mobile ATM switches. Finally, it discusses problems with PNNI peer group formation and operation when mobile ATM switches are present.

  3. High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

    SciTech Connect (OSTI)

    Chun, Young Tea; Chu, Daping; Neeves, Matthew; Placido, Frank; Smithwick, Quinn

    2014-11-10

    High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO{sub x} thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2?cm{sup 2}, exhibiting an optical contrast of 73.11% at the wavelength of 470?nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively.

  4. Spin Hall switching of the magnetization in Ta/TbFeCo structures with bulk perpendicular anisotropy

    SciTech Connect (OSTI)

    Zhao, Zhengyang; Jamali, Mahdi; Smith, Angeline K.; Wang, Jian-Ping

    2015-03-30

    Spin-orbit torques are studied in Ta/TbFeCo/MgO patterned structures, where the ferrimagnetic material TbFeCo provides a strong bulk perpendicular magnetic anisotropy (bulk-PMA) independent of the interfaces. The current-induced magnetization switching in TbFeCo is investigated in the presence of a perpendicular, longitudinal, or transverse field. An unexpected partial-switching phenomenon is observed in the presence of a transverse field unique to our bulk-PMA material. It is found that the anti-damping torque related with spin Hall effect is very strong, and a spin Hall angle is determined to be 0.12. The field-like torque related with Rashba effect is unobservable, suggesting that the interface play a significant role in Rashba-like torque.

  5. Spectrographic temperature measurement of a high power breakdown arc in a high pressure gas switch

    SciTech Connect (OSTI)

    Yeckel, Christopher; Curry, Randy

    2011-09-15

    A procedure for obtaining an approximate temperature value of conducting plasma generated during self-break closure of a RIMFIRE gas switch is described. The plasma is in the form of a breakdown arc which conducts approximately 12 kJ of energy in 1 {mu}s. A spectrographic analysis of the trigger-section of the 6-MV RIMFIRE laser triggered gas switch used in Sandia National Laboratory's ''Z-Machine'' has been made. It is assumed that the breakdown plasma has sufficiently approached local thermodynamic equilibrium allowing a black-body temperature model to be applied. This model allows the plasma temperature and radiated power to be approximated. The gas dielectric used in these tests was pressurized SF{sub 6}. The electrode gap is set at 4.59 cm for each test. The electrode material is stainless steel and insulator material is poly(methyl methacrylate). A spectrum range from 220 to 550 nanometers has been observed and calibrated using two spectral irradiance lamps and three spectrograph gratings. The approximate plasma temperature is reported.

  6. Early stage time evolution of a dense nanosecond microdischarge used in fast optical switching applications

    SciTech Connect (OSTI)

    Levko, Dmitry; Raja, Laxminarayan L.

    2015-12-15

    The mechanism of high-voltage nanosecond microdischarges is studied by the self-consistent two-dimensional Particle-in-Cell/Monte Carlo Collisions model. These microdischarges were recently proposed for use as fast switches of visible light in Bataller et al. [Appl. Phys. Lett. 105, 223501 (2014)]. The microdischarge is found to develop in two stages. The first stage is associated with the electrons initially seeded in the cathode-anode gap. These electrons lead to the formation of a cathode-directed streamer. The second stage starts when the secondary electron emission from the cathode begins. In this stage, a rather dense plasma (∼10{sup 16 }cm{sup −3}) is generated which results in the narrow cathode sheath. The electric field in this sheath exceeds the critical electric field which is necessary for the runaway electrons generation. We have found that the presence of these energetic electrons is crucial for the discharge maintenance.

  7. Spin-transfer switching of orthogonal spin-valve devices at cryogenic temperatures

    SciTech Connect (OSTI)

    Ye, L. Gopman, D. B.; Rehm, L.; Backes, D.; Wolf, G.; Kent, A. D.; Ohki, T.; Kirichenko, A. F.; Vernik, I. V.; Mukhanov, O. A.

    2014-05-07

    We present the quasi-static and dynamic switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at cryogenic temperatures. Switching at 12 K between parallel and anti-parallel spin-valve states is investigated for slowly varied current as well as for current pulses with durations as short as 200 ps. We demonstrate 100% switching probability with current pulses 0.6 ns in duration. We also present a switching probability diagram that summarizes device switching operation under a variety of pulse durations, amplitudes, and polarities.

  8. Nanosecond switching in GeSe phase change memory films by atomic force microscopy

    SciTech Connect (OSTI)

    Bosse, James L.; Huey, Bryan D.; Grishin, Ilya; Kolosov, Oleg V.; Gyu Choi, Yong; Cheong, Byung-ki; Lee, Suyoun

    2014-02-03

    Nanosecond scale threshold switching is investigated with conducting atomic force microscopy (AFM) for an amorphous GeSe film. Switched bits exhibit 2–3 orders of magnitude variations in conductivity, as demonstrated in phase change based memory devices. Through the nm-scale AFM probe, this crystallization was achieved with pulse durations of as low as 15 ns, the fastest reported with scanning probe based methods. Conductance AFM imaging of the switched bits further reveals correlations between the switched volume, pulse amplitude, and pulse duration. The influence of film heterogeneities on switching is also directly detected, which is of tremendous importance for optimal device performance.

  9. Q-Switched Nd: YAG Laser Micro-Machining System

    SciTech Connect (OSTI)

    Messaoud, S.; Allam, A.; Siserir, F.; Bouceta, Y.; Kerdja, T.; Ouadjaout, D.

    2008-09-23

    In this paper, we present the design of a low cost Q-switched Nd: YAG laser micro-machining system for photo masks fabrication. It consists of: Nd:YAG laser source, beam delivery system, X-Y table, PC, The CCD camera and TV monitor. The synchronization between the laser source and the X-Y table is realised by NI PCI-7342, the two axis MID-7602 and LabVIEW based program. The first step of this work consists of engraving continuous and discontinuous lines on a thin film metal with a 100 {mu}m resolution by using the YG 980 Quantel Q-switched Nd:YAG laser.

  10. Plasma Switch for High-Power Active Pulse Compressor

    SciTech Connect (OSTI)

    Hirshfield, Jay L.

    2013-11-04

    Results are presented from experiments carried out at the Naval Research Laboratory X-band magnicon facility on a two-channel X-band active RF pulse compressor that employed plasma switches. Experimental evidence is shown to validate the basic goals of the project, which include: simultaneous firing of plasma switches in both channels of the RF circuit, operation of quasi-optical 3-dB hybrid directional coupler coherent superposition of RF compressed pulses from both channels, and operation of the X-band magnicon directly in the RF pulse compressor. For incident 1.2 ?s pulses in the range 0.63 ? 1.35 MW, compressed pulses of peak powers 5.7 ? 11.3 MW were obtained, corresponding to peak power gain ratios of 8.3 ? 9.3. Insufficient bakeout and conditioning of the high-power RF circuit prevented experiments from being conducted at higher RF input power levels.

  11. Combustion mode switching with a turbocharged/supercharged engine

    DOE Patents [OSTI]

    Mond, Alan; Jiang, Li

    2015-09-22

    A method for switching between low- and high-dilution combustion modes in an internal combustion engine having an intake passage with an exhaust-driven turbocharger, a crankshaft-driven positive displacement supercharger downstream of the turbocharger and having variable boost controllable with a supercharger bypass valve, and a throttle valve downstream of the supercharger. The current combustion mode and mass air flow are determined. A switch to the target combustion mode is commanded when an operating condition falls within a range of predetermined operating conditions. A target mass air flow to achieve a target air-fuel ratio corresponding to the current operating condition and the target combustion mode is determined. The degree of opening of the supercharger bypass valve and the throttle valve are controlled to achieve the target mass air flow. The amount of residual exhaust gas is manipulated.

  12. Electro-optical switching and memory display device

    DOE Patents [OSTI]

    Skotheim, T.A.; O'Grady, W.E.; Linkous, C.A.

    1983-12-29

    An electro-optical display device having a housing with wall means including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuits means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

  13. Electro-optical switching and memory display device

    DOE Patents [OSTI]

    Skotheim, Terje A.; O'Grady, William E.; Linkous, Clovis A.

    1986-01-01

    An electro-optical display device having a housing with wall means including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuit means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

  14. Vacuum-surface flashover switch with cantilever conductors

    DOE Patents [OSTI]

    Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

    2001-01-01

    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  15. Microwave pulse compression from a storage cavity with laser-induced switching

    DOE Patents [OSTI]

    Bolton, Paul R.

    1992-01-01

    A laser-induced switch and a multiple cavity configuration are disclosed for producing high power microwave pulses. The microwave pulses are well controlled in wavelength and timing, with a quick rise time and a variable shape and power of the pulse. In addition, a method of reducing pre-pulse leakage to a low level is disclosed. Microwave energy is directed coherently to one or more cavities that stores the energy in a single mode, represented as a standing wave pattern. In order to switch the stored microwave energy out of the main cavity and into the branch waveguide, a laser-actuated switch is provided for the cavity. The switch includes a laser, associated optics for delivering the beam into the main cavity, and a switching gas positioned at an antinode in the main cavity. When actuated, the switching gas ionizes, creating a plasma, which becomes reflective to the microwave energy, changing the resonance of the cavity, and as a result the stored microwave energy is abruptly switched out of the cavity. The laser may directly pre-ionize the switching gas, or it may pump an impurity in the switching gas to an energy level which switches when a pre-selected cavity field is attained. Timing of switching the cavities is controlled by varying the pathlength of the actuating laser beam. For example, the pathlengths may be adjusted to output a single pulse of high power, or a series of quick lower power pulses.

  16. The Usefulness of Bi-Level Switching; Original Technical Note: November 1998. Revised August, 1999

    SciTech Connect (OSTI)

    Building Technologies Department

    1998-11-01

    California's Title 24 Energy Efficiency Building Standard requires multiple lighting level control in all individual offices. Usually, this requirement is fulfilled using bi-level switching. With bi-level switching, each office occupant is provided with two wall switches near the doorway to control their lights. In a typical installation, one switch would control 1/3 of the fluorescent lamps in the ceiling lighting system, while the other switch would control the remaining 2/3 of the lamps. This allows four possible light levels: OFF, 1/3, 2/3 and FULL lighting. Because it has been required by building code since 1983, bi-level switching is common in California office buildings. However, there is no published evidence showing that occupants sometimes use just one switch rather than just switching on both switches when entering the room. Consequently, some have questioned whether bi-level switching is a necessary or desirable requirement for typical office buildings. In fact, the draft national standard, ASHRAE Standard 90.1-1989K apparently does not require bi-level switching at all.

  17. Interprocessor bus switching system for simultaneous communication in plural bus parallel processing system

    DOE Patents [OSTI]

    Atac, R.; Fischler, M.S.; Husby, D.E.

    1991-01-15

    A bus switching apparatus and method for multiple processor computer systems comprises a plurality of bus switches interconnected by branch buses. Each processor or other module of the system is connected to a spigot of a bus switch. Each bus switch also serves as part of a backplane of a modular crate hardware package. A processor initiates communication with another processor by identifying that other processor. The bus switch to which the initiating processor is connected identifies and secures, if possible, a path to that other processor, either directly or via one or more other bus switches which operate similarly. If a particular desired path through a given bus switch is not available to be used, an alternate path is considered, identified and secured. 11 figures.

  18. Interprocessor bus switching system for simultaneous communication in plural bus parallel processing system

    DOE Patents [OSTI]

    Atac, Robert; Fischler, Mark S.; Husby, Donald E.

    1991-01-01

    A bus switching apparatus and method for multiple processor computer systems comprises a plurality of bus switches interconnected by branch buses. Each processor or other module of the system is connected to a spigot of a bus switch. Each bus switch also serves as part of a backplane of a modular crate hardware package. A processor initiates communication with another processor by identifying that other processor. The bus switch to which the initiating processor is connected identifies and secures, if possible, a path to that other processor, either directly or via one or more other bus switches which operate similarly. If a particular desired path through a given bus switch is not available to be used, an alternate path is considered, identified and secured.

  19. Open Transport Switch A Software Defined Networking Architecture

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Open Transport Switch - A Software Defined Networking Architecture for Transport Networks Abhinava Sadasivarao * Sharfuddin Syed * Ping Pan * Chris Liou * Andrew Lake † Chin Guok † Inder Monga † * Infinera Corporation † Energy Sciences Network Sunnyvale, CA 94089 Berkeley, CA 94720 {asadasivarao, ssyed, ppan, cliou}@infinera.com {andy, chin, inder}@es.net ABSTRACT There have been a lot of proposals to unify the control and management of packet and circuit networks but none have been

  20. Device having two optical ports for switching applications

    DOE Patents [OSTI]

    Rosen, Ayre; Stabile, Paul J.

    1991-09-24

    A two-sided light-activatable semiconductor switch device having an optical port on each side thereof. The semiconductor device may be a p-i-n diode or of bulk intrinsic material. A two ported p-i-n diode, reverse-biased to "off" by a 1.3 kV dc power supply, conducted 192 A when activated by two 1 kW laser diode arrays, one for each optical port.

  1. Irreversible Low Load Genetic Switches - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Irreversible Low Load Genetic Switches Lawrence Berkeley National Laboratory Contact LBL About This Technology Technology Marketing SummaryAlthough the use of recombinases for manipulation of genomic sequences is well established, only a few recombinases have been conclusively demonstrated to work orthogonally. That is, as non-cross-reacting recombinases, they do not cause unpredictable recombination events. DescriptionResearchers at the Joint BioEnergy Institute (JBEI) have developed novel

  2. High-contrast and fast electrochromic switching enabled by plasmonics

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xu, Ting; Walter, Erich C.; Agrawal, Amit; Bohn, Christopher; Velmurugan, Jeyavel; Zhu, Wenqi; Lezec, Henri J.; Talin, A. Alec

    2016-01-27

    With vibrant colours and simple, room-temperature processing methods, electrochromic polymers have attracted attention as active materials for flexible, low-power-consuming devices. However, slow switching speeds in devices realized to date, as well as the complexity of having to combine several distinct polymers to achieve a full-colour gamut, have limited electrochromic materials to niche applications. Here we achieve fast, high-contrast electrochromic switching by significantly enhancing the interaction of light—propagating as deep-subwavelength-confined surface plasmon polaritons through arrays of metallic nanoslits, with an electrochromic polymer—present as an ultra-thin coating on the slit sidewalls. The switchable configuration retains the short temporal charge-diffusion characteristics of thinmore » electrochromic films, while maintaining the high optical contrast associated with thicker electrochromic coatings. In conclusion, we further demonstrate that by controlling the pitch of the nanoslit arrays, it is possible to achieve a full-colour response with high contrast and fast switching speeds, while relying on just one electrochromic polymer.« less

  3. Methods for batch fabrication of cold cathode vacuum switch tubes

    DOE Patents [OSTI]

    Walker, Charles A.; Trowbridge, Frank R.

    2011-05-10

    Methods are disclosed for batch fabrication of vacuum switch tubes that reduce manufacturing costs and improve tube to tube uniformity. The disclosed methods comprise creating a stacked assembly of layers containing a plurality of adjacently spaced switch tube sub-assemblies aligned and registered through common layers. The layers include trigger electrode layer, cathode layer including a metallic support/contact with graphite cathode inserts, trigger probe sub-assembly layer, ceramic (e.g. tube body) insulator layer, and metallic anode sub-assembly layer. Braze alloy layers are incorporated into the stacked assembly of layers, and can include active metal braze alloys or direct braze alloys, to eliminate costs associated with traditional metallization of the ceramic insulator layers. The entire stacked assembly is then heated to braze/join/bond the stack-up into a cohesive body, after which individual switch tubes are singulated by methods such as sawing. The inventive methods provide for simultaneously fabricating a plurality of devices as opposed to traditional methods that rely on skilled craftsman to essentially hand build individual devices.

  4. Active high-power RF switch and pulse compression system

    DOE Patents [OSTI]

    Tantawi, Sami G.; Ruth, Ronald D.; Zolotorev, Max

    1998-01-01

    A high-power RF switching device employs a semiconductor wafer positioned in the third port of a three-port RF device. A controllable source of directed energy, such as a suitable laser or electron beam, is aimed at the semiconductor material. When the source is turned on, the energy incident on the wafer induces an electron-hole plasma layer on the wafer, changing the wafer's dielectric constant, turning the third port into a termination for incident RF signals, and. causing all incident RF signals to be reflected from the surface of the wafer. The propagation constant of RF signals through port 3, therefore, can be changed by controlling the beam. By making the RF coupling to the third port as small as necessary, one can reduce the peak electric field on the unexcited silicon surface for any level of input power from port 1, thereby reducing risk of damaging the wafer by RF with high peak power. The switch is useful to the construction of an improved pulse compression system to boost the peak power of microwave tubes driving linear accelerators. In this application, the high-power RF switch is placed at the coupling iris between the charging waveguide and the resonant storage line of a pulse compression system. This optically controlled high power RF pulse compression system can handle hundreds of Megawatts of power at X-band.

  5. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; et al

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

  6. Electric field controlled reversible magnetic anisotropy switching studied by spin rectification

    SciTech Connect (OSTI)

    Zhou, Hengan; Fan, Xiaolong Wang, Fenglong; Jiang, Changjun; Rao, Jinwei; Zhao, Xiaobing; Xue, Desheng; Gui, Y. S.; Hu, C.-M.

    2014-03-10

    In this letter, spin rectification was used to study the electric field controlled dynamic magnetic properties of the multiferroic composite which is a Co stripe with induced in-plane anisotropy deposited onto a Pb(Mg{sub 1∕3}Nb{sub 2∕3})O{sub 3}-PbTiO{sub 3} substrate. Due to the coupling between piezoelectric and magnetoelastic effects, a reversible in-plane anisotropy switching has been realized by varying the history of the applied electric field. This merit results from the electric hysteresis of the polarization in the nonlinear piezoelectric regime, which has been proved by a butterfly type electric field dependence of the in-plane anisotropy field. Moreover, the electric field dependent effective demagnetization field and linewidth have been observed at the same time.

  7. High-Power Plasma Switch for 11.4 GHz Microwave Pulse Compressor

    SciTech Connect (OSTI)

    Jay L. Hirshfield

    2010-03-04

    Results obtained in several experiments on active RF pulse compression at X-band using a magnicon as the high-power RF source are presented. In these experiments, microwave energy was stored in high-Q TE01 and TE02 modes of two parallel-fed resonators, and then discharged using switches activated with rapidly fired plasma discharge tubes. Designs and high-power tests of several versions of the compressor are described. In these experiments, coherent pulse superposition was demonstrated at a 59 MW level of incident power. The compressed pulses observed had powers of 5070 MW and durations of 4070 ns. Peak power gains were measured to be in the range of 7:111:1 with efficiency in the range of 5063%.

  8. Spontaneous symmetry breaking in cosmos: the hybrid symmetron as a dark energy switching device

    SciTech Connect (OSTI)

    Bamba, K.; Nojiri, S.; Gannouji, R.; Kamijo, M.; Sami, M. E-mail: gannouji@rs.kagu.tus.ac.jp E-mail: nojiri@phys.nagoya-u.ac.jp

    2013-07-01

    We consider symmetron model in a generalized background with a hope to make it compatible with dark energy. We observe a ''no go'' theorem at least in case of a conformal coupling. Being convinced of symmetron incapability to be dark energy, we try to retain its role for spontaneous symmetry breaking and assign the role of dark energy either to standard quintessence or F(R) theory which are switched on by symmetron field in the symmetry broken phase. The scenario reduces to standard Einstein gravity in the high density region. After the phase transition generated by symmetron field, either the F(R) gravity or the standard quintessence are induced in the low density region. we demonstrate that local gravity constraints and other requirements are satisfied although the model could generate the late-time acceleration of Universe.

  9. Mechanical memory

    DOE Patents [OSTI]

    Gilkey, Jeffrey C.; Duesterhaus, Michelle A.; Peter, Frank J.; Renn, Rosemarie A.; Baker, Michael S.

    2006-08-15

    A first-in-first-out (FIFO) microelectromechanical memory apparatus (also termed a mechanical memory) is disclosed. The mechanical memory utilizes a plurality of memory cells, with each memory cell having a beam which can be bowed in either of two directions of curvature to indicate two different logic states for that memory cell. The memory cells can be arranged around a wheel which operates as a clocking actuator to serially shift data from one memory cell to the next. The mechanical memory can be formed using conventional surface micromachining, and can be formed as either a nonvolatile memory or as a volatile memory.

  10. Mechanical memory

    DOE Patents [OSTI]

    Gilkey, Jeffrey C.; Duesterhaus, Michelle A.; Peter, Frank J.; Renn, Rosemarie A.; Baker, Michael S.

    2006-05-16

    A first-in-first-out (FIFO) microelectromechanical memory apparatus (also termed a mechanical memory) is disclosed. The mechanical memory utilizes a plurality of memory cells, with each memory cell having a beam which can be bowed in either of two directions of curvature to indicate two different logic states for that memory cell. The memory cells can be arranged around a wheel which operates as a clocking actuator to serially shift data from one memory cell to the next. The mechanical memory can be formed using conventional surface micromachining, and can be formed as either a nonvolatile memory or as a volatile memory.

  11. Aided by Simulations, Scientists Observe Atomic Collapse State

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Collapse State Observed Aided by Simulations, Scientists Observe Atomic Collapse State Quantum Mechanics Prediction Confirmed in Graphene Using NERSC's Hopper April 26, 2013...

  12. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

    SciTech Connect (OSTI)

    Jiang, Xiaofan; Ma, Zhongyuan Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-09-28

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  13. Agreement Mechanisms

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Agreement Mechanisms Agreement Mechanisms World-class experts and capabilities countering all aspects of explosive threats, and aiming predominantly at enhanced detection capabilities. CRADA: Cooperative Research and Development Agreement What is it? Work performed in collaboration with a sponsor. What does it do? Enables Los Alamos staff to participate with industry, academia, and nonprofit entities on collaborative R&D activities of mutual benefit. When is it used? An organization's

  14. RELAP5/MOD3.2 Investigation of a VVER-1000 MCP Switching on Problem

    SciTech Connect (OSTI)

    Groudev, Pavlin; Pavlova, Malinka

    2002-07-01

    This paper provides a discussion of various RELAP5 parameters calculated for the investigation of the nuclear power reactor parameter behavior in case of switching on one main coolant pump (MCP) when the other three MCPs are in operation. The reference power plant for this analysis is Unit 6 at the Kozloduy Nuclear Power Plant (NPP) site. Operational data from Kozloduy NPP have been used for the purpose of assessing how the RELAP5 model compares against plant data. During the plant-commissioning phase at Kozloduy NPP Unit 6 a number of experiments have been performed. One of them is switching on MCP when the other three MCPs are in operation. The event is characterized by rapid increase in the flow through the core resulting in a coolant temperature decrease, which leads to insertion of positive reactivity due to the modeled feedback mechanisms. This investigation has been conducted by Bulgarian and Russian specialists on the stage when the reactor power was at 75% of the nominal level. The purpose of the experiment was the complete testing of reliability of all power plant equipment, testing the reliability of the main regulators and defining a jump of the neutron reactor power in case of switching on of one main coolant pump. The Institute for Nuclear Research and Nuclear Energy - Bulgarian Academy of Sciences (INRNE-BAS), Sofia, and Kozloduy NPP have been developing a RELAP5/MOD3.2 model for Kozloduy NPP VVER-1000 for investigation of operational occurrences, abnormal events, and design basis scenarios. This investigation is a process that compares the analytical results obtained by the RELAP5 computer model of the VVER-1000 against the experimental transient data received from the Kozloduy NPP Unit 6. The comparisons between the RELAP5 results and the test data indicate good agreement. This report was possible through the participation of leading specialists from Kozloduy NPP and with the support of Argonne National Laboratory, under the International Nuclear

  15. Route to polarization switching induced by optical injection in vertical-cavity surface-emitting lasers

    SciTech Connect (OSTI)

    Sciamanna, M.; Panajotov, K.

    2006-02-15

    We perform a theoretical investigation of the polarization dynamics in a vertical-cavity surface-emitting laser (VCSEL) subject to orthogonal optical injection, i.e., the injected field has a linear polarization (LP) orthogonal to that of the free-running VCSEL. In agreement with previous experiments [Z. G. Pan et al., Appl. Phys. Lett. 63, 2999 (1993)], an increase of the injection strength may lead to a polarization switching accompanied by an injection locking. We find that this route to polarization switching is typically accompanied by a cascade of bifurcations to wave-mixing dynamics and time-periodic and possibly chaotic regimes. A detailed mapping of the polarization dynamics in the plane of the injection parameters (detuning, injection strength) unveils a large richness of dynamical scenarios. Of particular interest is the existence of another injection-locked solution for which the two LP modes both lock to the master laser frequency, i.e., an elliptically polarized injection-locked (EPIL) steady state. Modern continuation techniques allow us to unveil an unfolding mechanism of the EPIL solution as the detuning varies and also to link the existence of the EPIL solution to a resonance condition between the master laser frequency and the free-running frequency of the normally depressed LP mode in the slave laser. We furthermore report an additional case of bistability, in which the EPIL solution may coexist with the second injection-locked solution (the one being locked to the master polarization). This case of bistability is a result of the interaction between optical injection and the two-polarization-mode characteristics of VCSEL devices.

  16. Thermally activated switching of perpendicular magnet by spin-orbit spin torque

    SciTech Connect (OSTI)

    Lee, Ki-Seung; Lee, Seo-Won; Min, Byoung-Chul; Lee, Kyung-Jin

    2014-02-17

    We theoretically investigate the threshold current for thermally activated switching of a perpendicular magnet by spin-orbit spin torque. Based on the Fokker-Planck equation, we obtain an analytic expression of the switching current, in agreement with numerical result. We find that thermal energy barrier exhibits a quasi-linear dependence on the current, resulting in an almost linear dependence of switching current on the log-scaled current pulse-width even below 10 ns. This is in stark contrast to standard spin torque switching, where thermal energy barrier has a quadratic dependence on the current and the switching current rapidly increases at short pulses. Our results will serve as a guideline to design and interpret switching experiments based on spin-orbit spin torque.

  17. The design and analysis of multi-megawatt distributed single pole double throw (SPDT) microwave switches

    SciTech Connect (OSTI)

    Tantawi, S.G. [Stanford Linear Accelerator Center, SLAC, 2575 Sand Hill Rd. Menlo Park, California 94025 (United States)

    1999-05-01

    We present design methodology and analysis for an SPDT switch that is capable of handling hundreds of megawatts of power at X-band. The switch is designed for application in high power rf systems in particular future Linear Colliders (1). In these systems switching need to be fast in one direction only. We use this to our advantage to reach a design for a super high power switch. In our analysis we treat the problem from an abstract point of view. We introduce a unified analysis for the microwave circuits irrespective of the switching elements. The analysis is, then, suitable for different kinds of switching elements such as photoconductrs. PIN diodes, and plasma discharge in low-pressure gases. {copyright} {ital 1999 American Institute of Physics.}

  18. Single-ion adsorption and switching in carbon nanotubes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bushmaker, Adam W.; Oklejas, Vanessa; Walker, Don; Hopkins, Alan R.; Chen, Jihan; Cronin, Stephen B.

    2016-01-25

    Single-ion detection has, for many years, been the domain of large devices such as the Geiger counter, and studies on interactions of ionized gasses with materials have been limited to large systems. To date, there have been no reports on single gaseous ion interaction with microelectronic devices, and single neutral atom detection techniques have shown only small, barely detectable responses. Here we report the observation of single gaseous ion adsorption on individual carbon nanotubes (CNTs), which, because of the severely restricted one-dimensional current path, experience discrete, quantized resistance increases of over two orders of magnitude. Only positive ions cause changes,more » by the mechanism of ion potentialinduced carrier depletion, which is supported by density functional and Landauer transport theory. Lastly, our observations reveal a new single-ion/CNT heterostructure with novel electronic properties, and demonstrate that as electronics are ultimately scaled towards the one-dimensional limit, atomic-scale effects become increasingly important.« less

  19. Computational mechanics

    SciTech Connect (OSTI)

    Goudreau, G.L.

    1993-03-01

    The Computational Mechanics thrust area sponsors research into the underlying solid, structural and fluid mechanics and heat transfer necessary for the development of state-of-the-art general purpose computational software. The scale of computational capability spans office workstations, departmental computer servers, and Cray-class supercomputers. The DYNA, NIKE, and TOPAZ codes have achieved world fame through our broad collaborators program, in addition to their strong support of on-going Lawrence Livermore National Laboratory (LLNL) programs. Several technology transfer initiatives have been based on these established codes, teaming LLNL analysts and researchers with counterparts in industry, extending code capability to specific industrial interests of casting, metalforming, and automobile crash dynamics. The next-generation solid/structural mechanics code, ParaDyn, is targeted toward massively parallel computers, which will extend performance from gigaflop to teraflop power. Our work for FY-92 is described in the following eight articles: (1) Solution Strategies: New Approaches for Strongly Nonlinear Quasistatic Problems Using DYNA3D; (2) Enhanced Enforcement of Mechanical Contact: The Method of Augmented Lagrangians; (3) ParaDyn: New Generation Solid/Structural Mechanics Codes for Massively Parallel Processors; (4) Composite Damage Modeling; (5) HYDRA: A Parallel/Vector Flow Solver for Three-Dimensional, Transient, Incompressible Viscous How; (6) Development and Testing of the TRIM3D Radiation Heat Transfer Code; (7) A Methodology for Calculating the Seismic Response of Critical Structures; and (8) Reinforced Concrete Damage Modeling.

  20. Transparent ceramic photo-optical semiconductor high power switches

    DOE Patents [OSTI]

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  1. Klystron switching power supplies for the Internation Linear Collider

    SciTech Connect (OSTI)

    Fraioli, Andrea; /Cassino U. /INFN, Pisa

    2009-12-01

    The International Linear Collider is a majestic High Energy Physics particle accelerator that will give physicists a new cosmic doorway to explore energy regimes beyond the reach of today's accelerators. ILC will complement the Large Hadron Collider (LHC), a proton-proton collider at the European Center for Nuclear Research (CERN) in Geneva, Switzerland, by producing electron-positron collisions at center of mass energy of about 500 GeV. In particular, the subject of this dissertation is the R&D for a solid state Marx Modulator and relative switching power supply for the International Linear Collider Main LINAC Radio Frequency stations.

  2. Prediction of Acoustic Noise in Switched Reluctance Motor Drives

    SciTech Connect (OSTI)

    Lin, CJ; Fahimi, B

    2014-03-01

    Prediction of acoustic noise distribution generated by electric machines has become an integral part of design and control in noise sensitive applications. This paper presents a fast and precise acoustic noise imaging technique for switched reluctance machines (SRMs). This method is based on distribution of radial vibration in the stator frame of the SRM. Radial vibration of the stator frame, at a network of probing points, is computed using input phase current and phase voltage waveforms. Sequentially, the acceleration of the probing network will be expanded to predict full acceleration on the stator frame surface, using which acoustic noise emission caused by the stator can be calculated using the boundary element method.

  3. The ensemble switch method for computing interfacial tensions

    SciTech Connect (OSTI)

    Schmitz, Fabian; Virnau, Peter

    2015-04-14

    We present a systematic thermodynamic integration approach to compute interfacial tensions for solid-liquid interfaces, which is based on the ensemble switch method. Applying Monte Carlo simulations and finite-size scaling techniques, we obtain results for hard spheres, which are in agreement with previous computations. The case of solid-liquid interfaces in a variant of the effective Asakura-Oosawa model and of liquid-vapor interfaces in the Lennard-Jones model are discussed as well. We demonstrate that a thorough finite-size analysis of the simulation data is required to obtain precise results for the interfacial tension.

  4. Failure mechanisms in MEMS.

    SciTech Connect (OSTI)

    Walraven, Jeremy Allen

    2003-07-01

    MEMS components by their very nature have different and unique failure mechanisms than their macroscopic counterparts. This paper discusses failure mechanisms observed in various MEMS components and technologies. MEMS devices fabricated using bulk and surface micromachining process technologies are emphasized. MEMS devices offer uniqueness in their application, fabrication, and functionality. Their uniqueness creates various failure mechanisms not typically found in their bulk or IC counterparts. In ICs, electrical precautions are taken to mitigate failure. In MEMS, both electrical and mechanical precautions must be enacted to reduce the risk of failure and increased reliability. Unlike ICs, many MEMS components are designed to interact with their environment, making the fabrication, testing, and packaging processes critical for the success of the device.

  5. Computational mechanics

    SciTech Connect (OSTI)

    Raboin, P J

    1998-01-01

    The Computational Mechanics thrust area is a vital and growing facet of the Mechanical Engineering Department at Lawrence Livermore National Laboratory (LLNL). This work supports the development of computational analysis tools in the areas of structural mechanics and heat transfer. Over 75 analysts depend on thrust area-supported software running on a variety of computing platforms to meet the demands of LLNL programs. Interactions with the Department of Defense (DOD) High Performance Computing and Modernization Program and the Defense Special Weapons Agency are of special importance as they support our ParaDyn project in its development of new parallel capabilities for DYNA3D. Working with DOD customers has been invaluable to driving this technology in directions mutually beneficial to the Department of Energy. Other projects associated with the Computational Mechanics thrust area include work with the Partnership for a New Generation Vehicle (PNGV) for ''Springback Predictability'' and with the Federal Aviation Administration (FAA) for the ''Development of Methodologies for Evaluating Containment and Mitigation of Uncontained Engine Debris.'' In this report for FY-97, there are five articles detailing three code development activities and two projects that synthesized new code capabilities with new analytic research in damage/failure and biomechanics. The article this year are: (1) Energy- and Momentum-Conserving Rigid-Body Contact for NIKE3D and DYNA3D; (2) Computational Modeling of Prosthetics: A New Approach to Implant Design; (3) Characterization of Laser-Induced Mechanical Failure Damage of Optical Components; (4) Parallel Algorithm Research for Solid Mechanics Applications Using Finite Element Analysis; and (5) An Accurate One-Step Elasto-Plasticity Algorithm for Shell Elements in DYNA3D.

  6. Next-gen RF MEMS Switch for a Smarter, Faster Internet of Things...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    RF MEMS Switch for a Smarter, Faster Internet of Things Karen Lightman 2014.03.28 Big Data. Internet of Things. Quantified Self. Connected Home. Connected City. These...

  7. MEMS Switches Are XS in Size, XXL in Power | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MEMS Switches Are XS in Size, XXL in Power Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) MEMS Switches Are XS in Size, XXL in Power Chris Keimel 2012.09.28 Walk into a dark room and flip a light switch on. This simple action connected an electrical circuit and caused a light to illuminate the room. That switch is a

  8. SEP Success Story: Louisiana Company Makes Switch to CNG, Helps Transform Local Fuel Supplies

    Broader source: Energy.gov [DOE]

    A Shreveport, Louisiana, company is switching to a locally-produced, cleaner source of fuel and helping other distribution fleets do the same. Learn more.

  9. Analysis of reliable sub-ns spin-torque switching under transverse bias magnetic fields

    SciTech Connect (OSTI)

    D'Aquino, M.; Perna, S.; Serpico, C.; Bertotti, G.; Mayergoyz, I. D.

    2015-05-07

    The switching process of a magnetic spin-valve nanosystem subject to spin-polarized current pulses is considered. The dependence of the switching probability on the current pulse duration is investigated. The further application of a transverse field along the intermediate anisotropy axis of the particle is used to control the quasi-random relaxation of magnetization to the reversed magnetization state. The critical current amplitudes to realize the switching are determined by studying the phase portrait of the Landau-Lifshtz-Slonczewski dynamics. Macrospin numerical simulations are in good agreement with the theoretical prediction and demonstrate reliable switching even for very short (below 100 ps) current pulses.

  10. Microstructure tuning and magnetism switching of ferroelectric barium titanate

    SciTech Connect (OSTI)

    Zhou, Wenliang; Deng, Hongmei; Ding, Nuofan; Yu, Lu; Yue, Fangyu; Yang, Pingxiong; Chu, Junhao

    2015-09-15

    Single-crystal and polycrystal BaTiO{sub 3} (BTO) materials synthesized by the physical and chemical methods, respectively, have been studied based on microstructural characterizations and magnetic measurements. The results of X-ray diffraction and Raman scatting spectra show that a single crystal tetragonal to polycrystalline pseudo-cubic structure transformation occurs in BTO ferroelectrics, dependent of growth conditions and interface effects. High-resolution transmission electron microscope data indicate that the as-prepared BTO/SrTiO{sub 3} (001) and BTO/SrRuO{sub 3}/SrTiO{sub 3} (001) heterostructures are highly c-axis oriented with atomic sharp interfaces. Lattice defects (i.e., edge-type misfit dislocations and stacking faults) in the heterostructures could be identified clearly and showed tunable with the variations of interface strain. Furthermore, the effects of vacancy defects on magnetic properties of BTO are discussed, which shows a diamagnetism–ferromagnetism switching as intrinsic vacancies increase. This work opens up a possible avenue to prepare magnetic BTO ferroelectrics. - Highlights: • Structure of BTO is tunable, depending on growth conditions and interface strain. • STEM–EDX data indicate the presence of lattice defects in BTO ferroelectrics. • BTO magnetism could be controlled by defects showing dia-ferromagnetism switching. • BTO with more vacancies shows RTFM, as evidence of vacancy magnetism effects.

  11. Ionic switch controls the DNA state in phage λ

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Dong; Liu, Ting; Zuo, Xiaobing; Li, Tao; Qiu, Xiangyun; Evilevitch, Alex

    2015-06-19

    We have recently found that DNA packaged in phage λ undergoes a disordering transition triggered by temperature, which results in increased genome mobility. This solid-to-fluid like DNA transition markedly increases the number of infectious λ particles facilitating infection. However, the structural transition strongly depends on temperature and ionic conditions in the surrounding medium. Using titration microcalorimetry combined with solution X-ray scattering, we mapped both energetic and structural changes associated with transition of the encapsidated λ-DNA. Packaged DNA needs to reach a critical stress level in order for transition to occur. We varied the stress on DNA in the capsid bymore » changing the temperature, packaged DNA length and ionic conditions. We found striking evidence that the intracapsid DNA transition is ‘switched on’ at the ionic conditions mimicking those in vivo and also at the physiologic temperature of infection at 37°C. This ion regulated on-off switch of packaged DNA mobility in turn affects viral replication. The results suggest a remarkable adaptation of phage λ to the environment of its host bacteria in the human gut. The metastable DNA state in the capsid provides a new paradigm for the physical evolution of viruses.« less

  12. Ionic switch controls the DNA state in phage λ

    SciTech Connect (OSTI)

    Li, Dong; Liu, Ting; Zuo, Xiaobing; Li, Tao; Qiu, Xiangyun; Evilevitch, Alex

    2015-06-19

    We have recently found that DNA packaged in phage λ undergoes a disordering transition triggered by temperature, which results in increased genome mobility. This solid-to-fluid like DNA transition markedly increases the number of infectious λ particles facilitating infection. However, the structural transition strongly depends on temperature and ionic conditions in the surrounding medium. Using titration microcalorimetry combined with solution X-ray scattering, we mapped both energetic and structural changes associated with transition of the encapsidated λ-DNA. Packaged DNA needs to reach a critical stress level in order for transition to occur. We varied the stress on DNA in the capsid by changing the temperature, packaged DNA length and ionic conditions. We found striking evidence that the intracapsid DNA transition is ‘switched on’ at the ionic conditions mimicking those in vivo and also at the physiologic temperature of infection at 37°C. This ion regulated on-off switch of packaged DNA mobility in turn affects viral replication. The results suggest a remarkable adaptation of phage λ to the environment of its host bacteria in the human gut. The metastable DNA state in the capsid provides a new paradigm for the physical evolution of viruses.

  13. A combinatorial histidine scanning library approach to engineer highly pH-dependent protein switches

    SciTech Connect (OSTI)

    Murtaugh, Megan L.; Fanning, Sean W.; Sharma, Tressa M.; Terry, Alexandra M.; Horn, James R.

    2012-09-05

    There is growing interest in the development of protein switches, which are proteins whose function, such as binding a target molecule, can be modulated through environmental triggers. Efforts to engineer highly pH sensitive protein-protein interactions typically rely on the rational introduction of ionizable groups in the protein interface. Such experiments are typically time intensive and often sacrifice the protein's affinity at the permissive pH. The underlying thermodynamics of proton-linkage dictate that the presence of multiple ionizable groups, which undergo a pK{sub a} change on protein binding, are necessary to result in highly pH-dependent binding. To test this hypothesis, a novel combinatorial histidine library was developed where every possible combination of histidine and wild-type residue is sampled throughout the interface of a model anti-RNase A single domain VHH antibody. Antibodies were coselected for high-affinity binding and pH-sensitivity using an in vitro, dual-function selection strategy. The resulting antibodies retained near wild-type affinity yet became highly sensitive to small decreases in pH, drastically decreasing their binding affinity, due to the incorporation of multiple histidine groups. Several trends were observed, such as histidine 'hot-spots,' which will help enhance the development of pH switch proteins as well as increase our understanding of the role of ionizable residues in protein interfaces. Overall, the combinatorial approach is rapid, general, and robust and should be capable of producing highly pH-sensitive protein affinity reagents for a number of different applications.

  14. Electric drive mechanism for vehicles

    SciTech Connect (OSTI)

    Bader, C.

    1983-06-21

    An electric drive mechanism is disclosed for vehicles, especially buses with overhead trolley routes, which routes are provided with relatively short interruptions in the overhead trolley. The drive mechanism includes a flywheel two externally excited electric motors which are adapted to be switched over from prime mover operation to generator operation, and which motors are effective as a ward-leonard drive during flywheel operation. The first electric motor is constructed for half of a maximum drive power and the second electric motor is likewise constructed for half or for square root 2/2 times the maximum drive power. Both electric motors are connected electrically in parallel during operation from the main electrical supply. The first and second motors are electrically connected in parallel during operation of the vehicle from the main electrical supply when a change-speed transmission is provided for connecting a drive shaft of one of the motors with driven vehicle wheels. A planetary gear transmission and a further transmission are provided for mechanically connecting the drive shaft of one of the motors with the second motor and with the flywheel.

  15. Sub-gigahertz beam switching of vertical-cavity surface-emitting laser with transverse coupled cavity

    SciTech Connect (OSTI)

    Nakahama, M.; Gu, X.; Sakaguchi, T.; Matsutani, A.; Ahmed, M.; Bakry, A.; Koyama, F.

    2015-08-17

    We report a high-speed electrical beam switching of vertical cavity surface emitting laser with a transverse coupled cavity. A high speed (sub-gigahertz) and large deflection angle (>30°) beam switching is demonstrated by employing the transverse mode switching. The angular switching speed of 900 MHz is achieved with narrow beam divergence of below 4° and extinction ratio of 8 dB. We also measured the near- and far-field patterns to clarify the origin of the beam switching. We present a simple one-dimensional Bragg reflector waveguide model, which well predicts the beam switching characteristic.

  16. Multi-jump magnetic switching in ion-beam sputtered amorphous Co{sub 20}Fe{sub 60}B{sub 20} thin films

    SciTech Connect (OSTI)

    Raju, M.; Chaudhary, Sujeet; Pandya, D. K.

    2013-08-07

    Unconventional multi-jump magnetization reversal and significant in-plane uniaxial magnetic anisotropy (UMA) in the ion-beam sputtered amorphous Co{sub 20}Fe{sub 60}B{sub 20}(5–75 nm) thin films grown on Si/amorphous SiO{sub 2} are reported. While such multi-jump behavior is observed in CoFeB(10 nm) film when the magnetic field is applied at 10°–20° away from the easy-axis, the same is observed in CoFeB(12.5 nm) film when the magnetic field is 45°–55° away from easy-axis. Unlike the previous reports of multi-jump switching in epitaxial films, their observance in the present case of amorphous CoFeB is remarkable. This multi-jump switching is found to disappear when the films are crystallized by annealing at 420 °C. The deposition geometry and the energy of the sputtered species appear to intrinsically induce a kind of bond orientation anisotropy in the films, which leads to the UMA in the as-grown amorphous CoFeB films. Exploitation of such multi-jump switching in amorphous CoFeB thin films could be of technological significance because of their applications in spintronic devices.

  17. The Finite Horizon Optimal Multi-Modes Switching Problem: The Viscosity Solution Approach

    SciTech Connect (OSTI)

    El Asri, Brahim Hamadene, Said

    2009-10-15

    In this paper we show existence and uniqueness of a solution for a system of m variational partial differential inequalities with inter-connected obstacles. This system is the deterministic version of the Verification Theorem of the Markovian optimal m-states switching problem. The switching cost functions are arbitrary. This problem is in relation with the valuation of firms in a financial market.

  18. Integration of planar transformer and/or planar inductor with power switches in power converter

    DOE Patents [OSTI]

    Chen, Kanghua; Ahmed, Sayeed; Zhu, Lizhi

    2007-10-30

    A power converter integrates at least one planar transformer comprising a multi-layer transformer substrate and/or at least one planar inductor comprising a multi-layer inductor substrate with a number of power semiconductor switches physically and thermally coupled to a heat sink via one or more multi-layer switch substrates.

  19. Solid-state active switch matrix for high energy, moderate power battery systems

    DOE Patents [OSTI]

    Deal, Larry; Paris, Peter; Ye, Changqing

    2016-06-07

    A battery management system employs electronic switches and capacitors. No traditional cell-balancing resistors are used. The BMS electronically switches individual cells into and out of a module of cells in order to use the maximum amount of energy available in each cell and to completely charge and discharge each cell without overcharging or under-discharging.

  20. Spin switches for compact implementation of neuron and synapse

    SciTech Connect (OSTI)

    Quang Diep, Vinh Sutton, Brian; Datta, Supriyo; Behin-Aein, Behtash

    2014-06-02

    Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert equations, one for each magnet in the network.

  1. High gain photoconductive semiconductor switch having tailored doping profile zones

    DOE Patents [OSTI]

    Baca, Albert G.; Loubriel, Guillermo M.; Mar, Alan; Zutavern, Fred J; Hjalmarson, Harold P.; Allerman, Andrew A.; Zipperian, Thomas E.; O'Malley, Martin W.; Helgeson, Wesley D.; Denison, Gary J.; Brown, Darwin J.; Sullivan, Charles T.; Hou, Hong Q.

    2001-01-01

    A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

  2. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1996-10-15

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

  3. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, Daniel W.; Lange, Arnold C.

    1996-01-01

    A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  4. Optically controlled multiple switching operations of DNA biopolymer devices

    SciTech Connect (OSTI)

    Hung, Chao-You; Tu, Waan-Ting; Lin, Yi-Tzu; Fruk, Ljiljana; Hung, Yu-Chueh

    2015-12-21

    We present optically tunable operations of deoxyribonucleic acid (DNA) biopolymer devices, where a single high-resistance state, write-once read-many-times memory state, write-read-erase memory state, and single low-resistance state can be achieved by controlling UV irradiation time. The device is a simple sandwich structure with a spin-coated DNA biopolymer layer sandwiched by two electrodes. Upon irradiation, the electrical properties of the device are adjusted owing to a phototriggered synthesis of silver nanoparticles in DNA biopolymer, giving rise to multiple switching scenarios. This technique, distinct from the strategy of doping of pre-formed nanoparticles, enables a post-film fabrication process for achieving optically controlled memory device operations, which provides a more versatile platform to fabricate organic memory and optoelectronic devices.

  5. ELEVATING MECHANISM

    DOE Patents [OSTI]

    Frederick, H.S.; Kinsella, M.A.

    1959-02-24

    An elevator is described, which is arranged for movement both in a horizontal and in a vertical direction so that the elevating mechanism may be employed for servicing equipment at separated points in a plant. In accordance with the present invention, the main elevator chassis is suspended from a monorail. The chassis, in turn supports a vertically moveable carriage, a sub- carriage vertically moveable on the carriage, and a turntable carried by the sub- carriage and moveable through an arc of 90 with the equipment attached thereto. In addition, the chassis supports all the means required to elevate or rotate the equipment.

  6. Design of DC-contact RF MEMS switch with temperature stability

    SciTech Connect (OSTI)

    Sun, Junfeng; Li, Zhiqun; Zhu, Jian; Yu, Yuanwei; Jiang, Lili

    2015-04-15

    In order to improve the temperature stability of DC-contact RF MEMS switch, a thermal buckle-beam structure is implemented. The stability of the switch pull-in voltage versus temperature is not only improved, but also the impact of stress and stress gradient on the drive voltage is suppressed. Test results show that the switch pull-in voltage is less sensitive to temperature between -20 °C and 100 °C. The variable rate of pull-in voltage to temperature is about -120 mV/°C. The RF performance of the switch is stable, and the isolation is almost independent of temperature. After being annealed at 280 °C for 12 hours, our switch samples, which are suitable for packaging, have less than 1.5% change in the rate of pull-in voltage.

  7. Fast deterministic switching in orthogonal spin torque devices via the control of the relative spin polarizations

    SciTech Connect (OSTI)

    Park, Junbo; Buhrman, R. A.; Ralph, D. C.; Kavli Institute at Cornell, Ithaca, New York 14853

    2013-12-16

    We model 100 ps pulse switching dynamics of orthogonal spin transfer (OST) devices that employ an out-of-plane polarizer and an in-plane polarizer. Simulation results indicate that increasing the spin polarization ratio, C{sub P}?=?P{sub IPP}/P{sub OPP}, results in deterministic switching of the free layer without over-rotation (360 rotation). By using spin torque asymmetry to realize an enhanced effective P{sub IPP}, we experimentally demonstrate this behavior in OST devices in parallel to anti-parallel switching. Modeling predicts that decreasing the effective demagnetization field can substantially reduce the minimum C{sub P} required to attain deterministic switching, while retaining low critical switching current, I{sub p}???500??A.

  8. Nonlinear space charge dynamics in mixed ionic-electronic conductors: Resistive switching and ferroelectric-like hysteresis of electromechanical response

    SciTech Connect (OSTI)

    Morozovska, Anna N.; Morozovsky, Nicholas V.; Eliseev, Eugene A.; Varenyk, Olexandr V.; Kim, Yunseok; Strelcov, Evgheni; Tselev, Alexander; Kalinin, Sergei V.

    2014-08-14

    We performed self-consistent modelling of nonlinear electrotransport and electromechanical response of thin films of mixed ionic-electronic conductors (MIEC) allowing for steric effects of mobile charged defects (ions, protons, or vacancies), electron degeneration, and Vegard stresses. We establish correlations between the features of the nonlinear space-charge dynamics, current-voltage, and bending-voltage curves for different types of the film electrodes. A pronounced ferroelectric-like hysteresis of the bending-voltage loops and current maxima on the double hysteresis current-voltage loops appear for the electron-transport electrodes. The double hysteresis loop with pronounced humps indicates a memristor-type resistive switching. The switching occurs due to the strong nonlinear coupling between the electronic and ionic subsystems. A sharp meta-stable maximum of the electron density appears near one open electrode and moves to another one during the periodic change of applied voltage. Our results can explain the nonlinear nature and correlation of electrical and mechanical memory effects in thin MIEC films. The analytical expression proving that the electrically induced bending of MIEC films can be detected by interferometric methods is derived.

  9. New directions in mechanics

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kassner, Michael E.; Nemat-Nasser, Sia; Suo, Zhigang; Bao, Gang; Barbour, J. Charles; Brinson, L. Catherine; Espinosa, Horacio; Gao, Huajian; Granick, Steve; Gumbsch, Peter; et al

    2004-09-15

    The Division of Materials Sciences and Engineering of the US Department of Energy (DOE) sponsored a workshop to identify cutting-edge research needs and opportunities, enabled by the application of theoretical and applied mechanics. The workshop also included input from biochemical, surface science, and computational disciplines, on approaching scientific issues at the nanoscale, and the linkage of atomistic-scale with nano-, meso-, and continuum-scale mechanics. This paper is a summary of the outcome of the workshop, consisting of three main sections, each put together by a team of workshop participants. Section 1 addresses research opportunities that can be realized by the applicationmore » of mechanics fundamentals to the general area of self-assembly, directed self-assembly, and fluidics. Section 2 examines the role of mechanics in biological, bioinspired, and biohybrid material systems, closely relating to and complementing the material covered in Section 1. In this manner, it was made clear that mechanics plays a fundamental role in understanding the biological functions at all scales, in seeking to utilize biology and biological techniques to develop new materials and devices, and in the general area of bionanotechnology. While direct observational investigations are an essential ingredient of new discoveries and will continue to open new exciting research doors, it is the basic need for controlled experimentation and fundamentally- based modeling and computational simulations that will be truly empowered by a systematic use of the fundamentals of mechanics. Section 3 brings into focus new challenging issues in inelastic deformation and fracturing of materials that have emerged as a result of the development of nanodevices, biopolymers, and hybrid bio–abio systems. As a result, each section begins with some introductory overview comments, and then provides illustrative examples that were presented at the workshop and which are believed to highlight the

  10. Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

    SciTech Connect (OSTI)

    Ievlev, Anton; Morozovska, A. N.; Eliseev, E. A.; Shur, Vladimir Ya.; Kalinin, Sergei V

    2014-01-01

    Electric field induced polarization switching underpins most functional applications of ferroelectric materials in information technology, materials science, and optoelectronics. In the last 20 years, much attention has been focused on the switching of individual domains using scanning probe microscopy, both as model of ferroelectric data storage and approach to explore fundamental physics of ferroelectric switching. The classical picture of tip induced switching includes formation of cylindrical domain oriented along the tip field, with the domain size is largely determined by the tip-induced field distribution and domain wall motion kinetics. The polarization screening is recognized as a necessary precondition to the stability of ferroelectric phase; however, screening processes are generally considered to be uniformly efficient and not leading to changes in switching behavior. Here, we demonstrate that single-point tip-induced polarization switching can give rise to a surprisingly broad range of domain morphologies, including radial and angular instabilities. These behaviors are traced to the surface screening charge dynamics, which in some cases can even give rise to anomalous switching against the electric field (ionic field effect). The implications of these behaviors for ferroelectric materials and devices are discussed.

  11. Size dependence of magnetization switching and its dispersion of Co/Pt nanodots under the assistance of radio frequency fields

    SciTech Connect (OSTI)

    Furuta, Masaki Okamoto, Satoshi; Kikuchi, Nobuaki; Kitakami, Osamu; Shimatsu, Takehito

    2014-04-07

    We have studied the dot size dependence of microwave assisted magnetization switching (MAS) on perpendicular magnetic Co/Pt multilayer dot array. The significant microwave assistance effect has been observed over the entire dot size D ranging from 50?nm to 330?nm examined in the present study. The MAS behavior, however, critically depends on D. The excitation frequency dependence of the switching field is well consistent with the spin wave theory, indicating that the magnetization precession in MAS is in accordance with the well defined eigenmodes depending on the dot diameter. The lowest order spin wave is only excited for D???100?nm, and then the MAS effect is well consistent with that of the single macrospin prediction. On the other hand, higher order spin waves are excited for D?>?100?nm, giving rise to the significant enhancement of the MAS effect. The dispersion of MAS effect also depends on D and is significantly reduced for the region of D?>?100?nm. This significant reduction of the dispersion is attributed to the essential feature of the MAS effect which is insensitive to the local fluctuation of anisotropy field, such as defect, damaged layer, and so on.

  12. Three-terminal resistive switching memory in a transparent vertical-configuration device

    SciTech Connect (OSTI)

    Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-06

    The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies.

  13. Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation

    SciTech Connect (OSTI)

    Ohno, Takeo; Samukawa, Seiji

    2015-04-27

    Resistive switching in a Cu/Ta{sub 2}O{sub 5}/Pt structure that consisted of a few nanometer-thick Ta{sub 2}O{sub 5} film was demonstrated. The Ta{sub 2}O{sub 5} film with thicknesses of 25?nm was formed with a combination of Ta metal film deposition and neutral oxygen particle irradiation at room temperature. The device exhibited a bipolar resistive switching with a threshold voltage of 0.2?V and multilevel switching operation.

  14. Differential ultrafast all-optical switching of the resonances of a micropillar cavity

    SciTech Connect (OSTI)

    Thyrrestrup, Henri Yce, Emre; Ctistis, Georgios; Vos, Willem L.; Claudon, Julien; Grard, Jean-Michel

    2014-09-15

    We perform frequency- and time-resolved all-optical switching of a GaAs-AlAs micropillar cavity using an ultrafast pump-probe setup. The switching is achieved by two-photon excitation of free carriers. We track the cavity resonances in time with a high frequency resolution. The pillar modes exhibit simultaneous frequency shifts, albeit with markedly different maximum switching amplitudes and relaxation dynamics. These differences stem from the non-uniformity of the free carrier density in the micropillar, and are well understood by taking into account the spatial distribution of injected free carriers, their spatial diffusion and surface recombination at micropillar sidewalls.

  15. Effects of graphene on electro-optic switching and spontaneous polarization of a ferroelectric liquid crystal

    SciTech Connect (OSTI)

    Basu, Rajratan, E-mail: basu@usna.edu [Department of Physics, Soft-matter and Nanomaterials Laboratory, The United States Naval Academy, Annapolis, Maryland 21402 (United States)

    2014-09-15

    A small quantity of graphene flakes was doped in a ferroelectric liquid crystal (FLC), and the field-induced ferroelectric electro-optic switching was found to be significantly faster in the FLC + graphene hybrid than that of the pure FLC. Further studies revealed that the suspended graphene flakes enhanced the FLC's spontaneous polarization by improving smectic-C ordering resulting from the ?? electron stacking, and reduced rotation viscosity by trapping some of the free ions of the FLC media. These effects coherently impacted the FLC-switching phenomenon, enabling the FLC molecules to switch faster on reversing an external electric field.

  16. Artificial molecules that switch "handedness" at light-speed

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Artificial molecules that switch "handedness" Artificial molecules that switch "handedness" at light-speed Researchers create the first artificial molecules whose chirality can be rapidly switched from a right-handed to a left-handed orientation with a beam of light. July 10, 2012 Los Alamos National Laboratory sits on top of a once-remote mesa in northern New Mexico with the Jemez mountains as a backdrop to research and innovation covering multi-disciplines from bioscience,

  17. Low jitter spark gap switch for repetitively pulsed parallel capacitor banks

    SciTech Connect (OSTI)

    Rohwein, G. J.

    1980-01-01

    A two-section air insulated spark gap has been developed for switching multi-kilojoule plus-minus charged parallel capacitor banks which operate continuously at pulse rates up to 20 pps. The switch operates with less than 2 ns jitter, recovers its dielectric strength within 2 to 5 ms and has not shown degraded performance in sequential test runs totaling over a million shots. Its estimated life with copper electrodes is > 10/sup 7/ shots. All preliminary tests indicate that the switch is suitable for continuous running multi-kilojoule systems operating to at least 20 pps.

  18. Mechanical Design

    SciTech Connect (OSTI)

    Shook, Richard; /Marquette U. /SLAC

    2010-08-25

    The particle beam of the SXR (soft x-ray) beam line in the LCLS (Linac Coherent Light Source) has a high intensity in order to penetrate through samples at the atomic level. However, the intensity is so high that many experiments fail because of severe damage. To correct this issue, attenuators are put into the beam line to reduce this intensity to a level suitable for experimentation. Attenuation is defined as 'the gradual loss in intensity of any flux through a medium' by [1]. It is found that Beryllium and Boron Carbide can survive the intensity of the beam. At very thin films, both of these materials work very well as filters for reducing the beam intensity. Using a total of 12 filters, the first 9 being made of Beryllium and the rest made of Boron Carbide, the beam's energy range of photons can be attenuated between 800 eV and 9000 eV. The design of the filters allows attenuation for different beam intensities so that experiments can obtain different intensities from the beam if desired. The step of attenuation varies, but is relative to the thickness of the filter as a power function of 2. A relationship for this is f(n) = x{sub 0}2{sup n} where n is the step of attenuation desired and x{sub 0} is the initial thickness of the material. To allow for this desired variation, a mechanism must be designed within the test chamber. This is visualized using a 3D computer aided design modeling tool known as Solid Edge.

  19. Utilizing multiple state variables to improve the dynamic range of analog switching in a memristor

    SciTech Connect (OSTI)

    Jeong, YeonJoo; Kim, Sungho; Lu, Wei D.

    2015-10-26

    Memristors and memristive systems have been extensively studied for data storage and computing applications such as neuromorphic systems. To act as synapses in neuromorphic systems, the memristor needs to exhibit analog resistive switching (RS) behavior with incremental conductance change. In this study, we show that the dynamic range of the analog RS behavior can be significantly enhanced in a tantalum-oxide-based memristor. By controlling different state variables enabled by different physical effects during the RS process, the gradual filament expansion stage can be selectively enhanced without strongly affecting the abrupt filament length growth stage. Detailed physics-based modeling further verified the observed experimental effects and revealed the roles of oxygen vacancy drift and diffusion processes, and how the diffusion process can be selectively enhanced during the filament expansion stage. These findings lead to more desirable and reliable memristor behaviors for analog computing applications. Additionally, the ability to selectively control different internal physical processes demonstrated in the current study provides guidance for continued device optimization of memristor devices in general.

  20. Multitasking information behavior, information task switching and anxiety: An exploratory study

    SciTech Connect (OSTI)

    Alexopoulou, Peggy E-mail: an-kotsopoulou@yahoo.com; Kotsopoulou, Anastasia E-mail: an-kotsopoulou@yahoo.com

    2015-02-09

    Multitasking information behavior involves multiple forms of information searching such as library and Web search. Few researchers, however, have explored multitasking information behavior and information task switching in libraries in conjunction with psychological variables. This study explored this behavior in terms of anxiety under time pressure. This was an exploratory case study. Participant searched information for three unrelated everyday life information topics during a library visit, in a timeframe of one hour. The data collection tools used were: diary, observation, interview, and the State-Trait Anxiety Inventory test. Participant took the Trait-anxiety test before the library visit to measure anxiety level as a personal characteristic. She also took State-anxiety test before, during and after the library visit to measure anxiety levels regarding the information seeking behavior. The results suggested that participant had high levels of anxiety at the beginning of the multitasking information behavior. The reason for that was the concern about the performance as well as the identification of the right resources. During the multitasking information behavior, participant still had anxiety to find the right information. The levels of anxiety, however, were less due to library’s good organized structure. At the end of the information seeking process, the levels of anxiety dropped significant and therefore calm and safety returned. Finally, participant searched information for topics that were more important and for which she had prior knowledge When people, under time pressure, have access to well organized information, the levels of anxiety might decrease.

  1. Alternative pre-mRNA splicing switches modulate gene expression in late erythropoiesis

    SciTech Connect (OSTI)

    Yamamoto, Miki L.; Clark, Tyson A.; Gee, Sherry L.; Kang, Jeong-Ah; Schweitzer, Anthony C.; Wickrema, Amittha; Conboy, John G.

    2009-02-03

    Differentiating erythroid cells execute a unique gene expression program that insures synthesis of the appropriate proteome at each stage of maturation. Standard expression microarrays provide important insight into erythroid gene expression but cannot detect qualitative changes in transcript structure, mediated by RNA processing, that alter structure and function of encoded proteins. We analyzed stage-specific changes in the late erythroid transcriptome via use of high-resolution microarrays that detect altered expression of individual exons. Ten differentiation-associated changes in erythroblast splicing patterns were identified, including the previously known activation of protein 4.1R exon 16 splicing. Six new alternative splicing switches involving enhanced inclusion of internal cassette exons were discovered, as well as 3 changes in use of alternative first exons. All of these erythroid stage-specific splicing events represent activated inclusion of authentic annotated exons, suggesting they represent an active regulatory process rather than a general loss of splicing fidelity. The observation that 3 of the regulated transcripts encode RNA binding proteins (SNRP70, HNRPLL, MBNL2) may indicate significant changes in the RNA processing machinery of late erythroblasts. Together, these results support the existence of a regulated alternative pre-mRNA splicing program that is critical for late erythroid differentiation.

  2. Deterministic Arbitrary Switching of Polarization in a Ferroelectric Thin Film

    SciTech Connect (OSTI)

    Vasudevan, Rama K [ORNL; Matsumoto, Yuji [Tohoku University, Sendai, Japan; Cheng, Xuan [University of New South Wales, Sydney, Australia; Imai, Akira [Tokyo Institute of Technology; Maruyama, Shingo [Tohoku University, Sendai, Japan; Xin, Huolin L. [Brookhaven National Laboratory (BNL); Okatan, Mahmut B [ORNL; Jesse, Stephen [ORNL; Kalinin, Sergei V [ORNL; Nagarajan, Valanoor [University of New South Wales

    2014-01-01

    Ferroelectrics have been used as memory storage devices, with an upper bound on the total possible memory levels generally dictated by the number of degenerate states allowed by the symmetry of the ferroelectric phase. Here, we introduce a new concept for storage wherein the polarization can be rotated arbitrarily, effectively decoupling it from the crystallographic symmetry of the ferroelectric phase on the mesoscale. By using a Bi5Ti3FeO15-CoFe2O4 film and via Band-Excitation Piezoresponse Force Microscopy, we show the ability to arbitrarily rotate polarization, create a spectrum of switched states, and suggest the reason for the polarization rotation is an abundance of sub-50nm nanodomains. Transmission electron microscopy-based strain mapping confirms significant local strain undulations imparted on the matrix by the CoFe2O4 inclusions, which causes significant local disorder. These experiments point to controlled tuning of polarization rotation in a standard ferroelectric, and hence the potential to greatly extend the attainable densities for ferroelectric memories.

  3. Quantifying the heat switching capability of a thermionic diode

    SciTech Connect (OSTI)

    Snyder, A.M.; Verrill, D.A.

    1995-12-01

    The Integrated Solar Upper Stage (ISUS) Advanced Technology Demonstrator (ATD) program, recently initiated by the US Air Force Phillips Laboratory (USAF PL), will demonstrate the feasibility of a combined solar power and propulsion upper stage. The solar bimodal design approach will use thermal energy storage to reduce engine mass and concentrator area. However, in order to store enough energy over an orbit period there must be minimal heat lost with a system that is designed to remove heat for energy conversion. A unique feature of thermionics is their ability to reduce heat flow by reducing or eliminating the electron cooling. However, demonstration and quantification of this capability is needed. This paper presents the results to date of the Receiver Diode Integration Test, one of two critical experiments of the ISUS ATD program being performed by the Idaho National Engineering Laboratory (INEL). Results of the demonstration testing of thermionic heat pipe modules (THPMs) to operate as heat switches in conjunction with the solar receiver cavity are presented as are the performance limits and operational constraints of a combined receiver/diode subsystem.

  4. Anomalous reduction of the switching voltage of Bi-doped Ge{sub 0.5}Se{sub 0.5} ovonic threshold switching devices

    SciTech Connect (OSTI)

    Seo, Juhee; Ahn, Hyung-Woo; Shin, Sang-yeol; Cheong, Byung-ki; Lee, Suyoun

    2014-04-14

    Switching devices based on Ovonic Threshold Switching (OTS) have been considered as a solution to overcoming limitations of Si-based electronic devices, but the reduction of switching voltage is a major challenge. Here, we investigated the effect of Bi-doping in Ge{sub 0.5}Se{sub 0.5} thin films on their thermal, optical, electrical properties, as well as on the characteristics of OTS devices. As Bi increased, it was found that both of the optical energy gap (E{sub g}{sup opt}) and the depth of trap states decreased resulting in a drastic reduction of the threshold voltage (V{sub th}) by over 50%. In addition, E{sub g}{sup opt} was found to be about three times of the conduction activation energy for each composition. These results are explained in terms of the Mott delocalization effect by doping Bi.

  5. Switching of the Spin-Density-Wave in CeCoIn5 probed by Thermal...

    Office of Scientific and Technical Information (OSTI)

    Title: Switching of the Spin-Density-Wave in CeCoIn5 probed by Thermal Conductivity Authors: Kim, Duk Young 1 ; Lin, Shizeng 1 ; Weickert, Franziska 2 ; Bauer, Eric Dietzgen ...

  6. Autoinhibition and Signaling by the Switch II Motif in the G...

    Office of Scientific and Technical Information (OSTI)

    in the G-protein Chaperone of a Radical Bsubscript 12 Enzyme Citation Details In-Document Search Title: Autoinhibition and Signaling by the Switch II Motif in the G-protein ...

  7. Thread selection according to predefined power characteristics during context switching on compute nodes

    DOE Patents [OSTI]

    None

    2013-06-04

    Methods, apparatus, and products are disclosed for thread selection during context switching on a plurality of compute nodes that includes: executing, by a compute node, an application using a plurality of threads of execution, including executing one or more of the threads of execution; selecting, by the compute node from a plurality of available threads of execution for the application, a next thread of execution in dependence upon power characteristics for each of the available threads; determining, by the compute node, whether criteria for a thread context switch are satisfied; and performing, by the compute node, the thread context switch if the criteria for a thread context switch are satisfied, including executing the next thread of execution.

  8. A switch III motif relays signaling between a B[subscript 12...

    Office of Scientific and Technical Information (OSTI)

    12 enzyme and its G-protein chaperone Citation Details In-Document Search Title: A switch III motif relays signaling between a Bsubscript 12 enzyme and its G-protein chaperone ...

  9. A Low Hysteresis NiTiFe Shape Memory Alloy Based Thermal Conduction Switch

    SciTech Connect (OSTI)

    Lemanski, J. L.; Krishnan, V. B.; Manjeri, R. Mahadevan; Vaidyanathan, R.; Notardonato, W. U.

    2006-03-31

    Shape memory alloys possess the ability to return to a preset shape by undergoing a solid state phase transformation at a particular temperature. This work reports on the development and testing of a low temperature thermal conduction switch that incorporates a NiTiFe shape memory element for actuation. The switch was developed to provide a variable conductive pathway between liquid methane and liquid oxygen dewars in order to passively regulate the temperature of methane. The shape memory element in the switch undergoes a rhombohedral or R-phase transformation that is associated with a small hysteresis (typically 1-2 deg. C) and offers the advantage of precision control over a set temperature range. For the NiTiFe alloy used, its thermomechanical processing, subsequent characterization using dilatometry, differential scanning calorimetry and implementation in the conduction switch configuration are addressed.

  10. Switching of the Spin-Density-Wave in CeCoIn5 probed by Thermal...

    Office of Scientific and Technical Information (OSTI)

    Switching of the Spin-Density-Wave in CeCoIn5 probed by Thermal Conductivity Citation ... Visit OSTI to utilize additional information resources in energy science and technology. A ...

  11. Electro-optic harmonic conversion to switch a laser beam out of a cavity

    DOE Patents [OSTI]

    Haas, R.A.; Henesian, M.A.

    1984-10-19

    The present invention relates to switching laser beams out of laser cavities, and more particularly, it relates to the use of generating harmonics of the laser beam to accomplish the switching. When laser light is generatd in a laser cavity the problem arises of how to switch the laser light out of the cavity in order to make use of the resulting laser beam in a well known multitude of ways. These uses include range finding, communication, remote sensing, medical surgery, laser fusion applications and many more. The switch-out problem becomes more difficult as the size of the laser aperture grows such as in laser fusion applications. The final amplifier stages of the Nova and Novette lasers at Lawrence Livermore National Laboratory are 46 centimeters with the laser beam expanded to 74 centimeters thereafter. Larger aperture lasers are planned.

  12. Influence of ion irradiation on switching field and switching field distribution in arrays of Co/Pd-based bit pattern media

    SciTech Connect (OSTI)

    Hauet, T.; Hellwig, O.; Dobisz, E.; Terris, B. D.; Park, S.-H.; Ravelosona, D.; Beigne, C.

    2011-04-25

    We have used ion irradiation to tune switching field and switching field distribution (SFD) in polycrystalline Co/Pd multilayer-based bit pattern media. Light He{sup +} ion irradiation strongly decreases perpendicular magnetic anisotropy amplitude due to Co/Pd interface intermixing, while the granular structure, i.e., the crystalline anisotropy, remains unchanged. In dot arrays, the anisotropy reduction leads to a decrease in coercivity (H{sub C}) but also to a strong broadening of the normalized SFD/H{sub C} (in percentage), since the relative impact of misaligned grains is enhanced. Our experiment thus confirms the major role of misorientated grains in SFD of nanodevice arrays.

  13. Heavy Mobile Equipment Mechanic (One Mechanic Shop)

    Broader source: Energy.gov [DOE]

    Join the Bonneville Power Administration (BPA) for a challenging and rewarding career, while working, living, and playing in the Pacific Northwest. The Heavy Mobile Equipment Mechanic (One Mechanic...

  14. Observation of Ordered Structures in Counterion Layers near Wet...

    Office of Scientific and Technical Information (OSTI)

    Title: Observation of Ordered Structures in Counterion Layers near Wet Charged Surfaces: A Potential Mechanism for Charge Inversion Authors: Miller, Mitchell ; Chu, Miaoqi ; Lin, ...

  15. Viscosity Solutions of Systems of PDEs with Interconnected Obstacles and Switching Problem

    SciTech Connect (OSTI)

    Hamadene, S. Morlais, M. A.

    2013-04-15

    This paper deals with existence and uniqueness of a solution in viscosity sense, for a system of m variational partial differential inequalities with inter-connected obstacles. A particular case is the Hamilton-Jacobi-Bellmann system of the Markovian stochastic optimal m-states switching problem. The switching cost functions depend on (t,x). The main tool is the notion of systems of reflected backward stochastic differential equations with oblique reflection.

  16. Binary and ternary gas mixtures for use in glow discharge closing switches

    DOE Patents [OSTI]

    Hunter, Scott R.; Christophorou, Loucas G.

    1990-01-01

    Highly efficient binary and ternary gas mixtures for use in diffuse glow discharge closing switches are disclosed. The binary mixtures are combinations of helium or neon and selected perfluorides. The ternary mixtures are combinations of helium, neon, or argon, a selected perfluoride, and a small amount of gas that exhibits enhanced ionization characteristics. These mixtures are shown to be the optimum choices for use in diffuse glow discharge closing switches by virtue of the combined physio-electric properties of the mixture components.

  17. PPPL lends General Electric a hand in developing an advanced power switch |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Princeton Plasma Physics Lab PPPL lends General Electric a hand in developing an advanced power switch By John Greenwald August 28, 2014 Tweet Widget Google Plus One Share on Facebook Laboratory test of a liquid-metal cathode. (Photo by General Electric Co.) Laboratory test of a liquid-metal cathode. Scientists at the U.S. Department of Energy's (DOE) Princeton Plasma Physics Laboratory (PPPL) are assisting General Electric Co. in developing an electrical switch that could help lower utility

  18. PPPL lends General Electric a hand in developing an advanced power switch |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Princeton Plasma Physics Lab lends General Electric a hand in developing an advanced power switch By John Greenwald August 28, 2014 Tweet Widget Google Plus One Share on Facebook Laboratory test of a liquid-metal cathode. (Photo by General Electric Co. ) Laboratory test of a liquid-metal cathode. Scientists at the U.S. Department of Energy's (DOE) Princeton Plasma Physics Laboratory (PPPL) are assisting General Electric Co. in developing an electrical switch that could help lower utility

  19. Method for wiring allocation and switch configuration in a multiprocessor environment

    DOE Patents [OSTI]

    Aridor, Yariv; Domany, Tamar; Frachtenberg, Eitan; Gal, Yoav; Shmueli, Edi; Stockmeyer, legal representative, Robert E.; Stockmeyer, Larry Joseph

    2008-07-15

    A method for wiring allocation and switch configuration in a multiprocessor computer, the method including employing depth-first tree traversal to determine a plurality of paths among a plurality of processing elements allocated to a job along a plurality of switches and wires in a plurality of D-lines, and selecting one of the paths in accordance with at least one selection criterion.

  20. Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

    DOE Patents [OSTI]

    Sumant, Anirudha V.; Auciello, Orlando H.; Mancini, Derrick C.

    2013-01-15

    An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

  1. Current dependence of spin torque switching rate based on Fokker-Planck approach

    SciTech Connect (OSTI)

    Taniguchi, Tomohiro Imamura, Hiroshi

    2014-05-07

    The spin torque switching rate of an in-plane magnetized system in the presence of an applied field is derived by solving the Fokker-Planck equation. It is found that three scaling currents are necessary to describe the current dependence of the switching rate in the low-current limit. The dependences of these scaling currents on the applied field strength are also studied.

  2. Get Current: Switch on Clean Energy Activity Book | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Activity Book Get Current: Switch on Clean Energy Activity Book Below is information about the student activity/lesson plan from your search. Grades K-4, 5-8, 9-12 Subject Energy Basics Summary Switching on clean energy technologies means strengthening the economy while protecting the environment. This activity book for all ages promotes energy awareness, with facts on different types of energy and a variety of puzzles in an energy theme. Curriculum Science, Mathematics, Language Arts Plan Time

  3. Geo-neutrino Observation

    SciTech Connect (OSTI)

    Dye, S. T.; Alderman, M.; Batygov, M.; Learned, J. G.; Matsuno, S.; Mahoney, J. M.; Pakvasa, S.; Rosen, M.; Smith, S.; Varner, G.; McDonough, W. F.

    2009-12-17

    Observations of geo-neutrinos measure radiogenic heat production within the earth, providing information on the thermal history and dynamic processes of the mantle. Two detectors currently observe geo-neutrinos from underground locations. Other detection projects in various stages of development include a deep ocean observatory. This paper presents the current status of geo-neutrino observation and describes the scientific capabilities of the deep ocean observatory, with emphasis on geology and neutrino physics.

  4. Hot Pot Field Observations

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Lane, Michael

    Map of field observations including depressions, springs, evidence of former springs, travertine terraces and vegetation patterns. Map also contains interpretation of possible spring alignments.

  5. Hot Pot Field Observations

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Lane, Michael

    2013-06-28

    Map of field observations including depressions, springs, evidence of former springs, travertine terraces and vegetation patterns. Map also contains interpretation of possible spring alignments.

  6. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1997-03-11

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360{degree}/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs.

  7. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, Daniel W.; Lange, Arnold C.

    1997-01-01

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

  8. Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

    SciTech Connect (OSTI)

    Liu, Yanhong; Gao, Ping; Bi, Kaifeng; Peng, Wei [School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024 (China); Jiang, Xuening; Xu, Hongxia [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian116024 (China)

    2014-01-27

    Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

  9. Magnetic switching behaviors of orbital states with different magnetic quantum numbers in Au/Fe/MgO multilayer system

    SciTech Connect (OSTI)

    Suzuki, Kosuke Takubo, Shota; Kato, Tadashi; Yamazoe, Masatoshi; Hoshi, Kazushi; Sakurai, Hiroshi; Homma, Yoshiya; Itou, Masayoshi; Sakurai, Yoshiharu

    2014-08-18

    A spin specific magnetic hysteresis (SSMH) curve and an orbital specific magnetic hysteresis (OSMH) curve are obtained for Fe/Au/Fe/MgO multilayers by magnetic Compton scattering and SQUID magnetometer measurements. The SSMH curve with each contribution of magnetic quantum number |m| = 0, 1, and 2 states is obtained by decomposition analyses of magnetic Compton profiles. Residual magnetization is observed for the SSMH curve with magnetic quantum number |m| = 0, 2 and the OSMH curve. Although the SQUID magnetometer measurements do not show perpendicular magnetic anisotropy (PMA) in the present Fe/Au/Fe/MgO multilayer film, the SSMH curve with magnetic quantum number |m| = 0, 2 and OSMH curve show switching behaviors of PMA.

  10. Phase space quantum mechanics - Direct

    SciTech Connect (OSTI)

    Nasiri, S.; Sobouti, Y.; Taati, F.

    2006-09-15

    Conventional approach to quantum mechanics in phase space (q,p), is to take the operator based quantum mechanics of Schroedinger, or an equivalent, and assign a c-number function in phase space to it. We propose to begin with a higher level of abstraction, in which the independence and the symmetric role of q and p is maintained throughout, and at once arrive at phase space state functions. Upon reduction to the q- or p-space the proposed formalism gives the conventional quantum mechanics, however, with a definite rule for ordering of factors of noncommuting observables. Further conceptual and practical merits of the formalism are demonstrated throughout the text.

  11. Single-ion adsorption and switching in carbon nanotubes (Journal...

    Office of Scientific and Technical Information (OSTI)

    in carbon nanotubes Citation Details In-Document ... Here we report the observation of single gaseous ion ... Type: Accepted Manuscript Journal Name: Nature ...

  12. Damage threshold and focusability of mid-infrared free-electron laser pulses gated by a plasma mirror with nanosecond switching pulses

    SciTech Connect (OSTI)

    Wang, Xiaolong; Nakajima, Takashi; Zen, Heishun; Kii, Toshiteru; Ohgaki, Hideaki

    2013-11-04

    The presence of a pulse train structure of an oscillator-type free-electron laser (FEL) results in the immediate damage of a solid target upon focusing. We demonstrate that the laser-induced damage threshold can be significantly improved by gating the mid-infrared FEL pulses with a plasma mirror. Although the switching pulses we employ have a nanosecond duration which does not guarantee the clean wavefront of the gated FEL pulses, the high focusability is experimentally confirmed through the observation of spectral broadening by a factor of 2.1 when we tightly focus the gated FEL pulses onto the Ge plate.

  13. Influence of carbon content on the copper-telluride phase formation and on the resistive switching behavior of carbon alloyed Cu-Te conductive bridge random access memory cells

    SciTech Connect (OSTI)

    Devulder, Wouter De Schutter, Bob; Detavernier, Christophe; Opsomer, Karl; Franquet, Alexis; Meersschaut, Johan; Muller, Robert; Van Elshocht, Sven; Jurczak, Malgorzata; Goux, Ludovic; Belmonte, Attilio

    2014-02-07

    In this paper, we investigate the influence of the carbon content on the Cu-Te phase formation and on the resistive switching behavior in carbon alloyed Cu{sub 0.6}Te{sub 0.4} based conductive bridge random access memory (CBRAM) cells. Carbon alloying of copper-tellurium inhibits the crystallization, while attractive switching behavior is preserved when using the material as Cu-supply layer in CBRAM cells. The phase formation is first investigated in a combinatorial way. With increasing carbon content, an enlargement of the temperature window in which the material stays amorphous was observed. Moreover, if crystalline phases are formed, subsequent phase transformations are inhibited. The electrical switching behavior of memory cells with different carbon contents is then investigated by implementing them in 580 μm diameter dot TiN/Cu{sub 0.6}Te{sub 0.4}-C/Al{sub 2}O{sub 3}/Si memory cells. Reliable switching behavior is observed for carbon contents up to 40 at. %, with a resistive window of more than 2 orders of magnitude, whereas for 50 at. % carbon, a higher current in the off state and only a small resistive window are present after repeated cycling. This degradation can be ascribed to the higher thermal and lower drift contribution to the reset operation due to a lower Cu affinity towards the supply layer, leading cycle-after-cycle to an increasing amount of Cu in the switching layer, which contributes to the current. The thermal diffusion of Cu into Al{sub 2}O{sub 3} under annealing also gives an indication of the Cu affinity of the source layer. Time of flight secondary ion mass spectroscopy was used to investigate this migration depth in Al{sub 2}O{sub 3} before and after annealing, showing a higher Cu, Te, and C migration for high carbon contents.

  14. A Soft-Switching Inverter for High-Temperature Advanced Hybrid Electric Vehicle Traction Motor Drives

    SciTech Connect (OSTI)

    Lai, Jason; Yu, Wensong; Sun, Pengwei; Leslie, Scott; Prusia, Duane; Arnet, Beat; Smith, Chris; Cogan, Art

    2012-03-31

    The state-of-the-art hybrid electric vehicles (HEVs) require the inverter cooling system to have a separate loop to avoid power semiconductor junction over temperatures because the engine coolant temperature of 105°C does not allow for much temperature rise in silicon devices. The proposed work is to develop an advanced soft-switching inverter that will eliminate the device switching loss and cut down the power loss so that the inverter can operate at high-temperature conditions while operating at high switching frequencies with small current ripple in low inductance based permanent magnet motors. The proposed tasks also include high-temperature packaging and thermal modeling and simulation to ensure the packaged module can operate at the desired temperature. The developed module will be integrated with the motor and vehicle controller for dynamometer and in-vehicle testing to prove its superiority. This report will describe the detailed technical design of the soft-switching inverters and their test results. The experiments were conducted both in module level for the module conduction and switching characteristics and in inverter level for its efficiency under inductive and dynamometer load conditions. The performance will be compared with the DOE original specification.

  15. The universal criterion for switching a magnetic vortex core in soft magnetic nanodots

    SciTech Connect (OSTI)

    Lee, K.-S.; Kim, S.-K.; Yu, Y.-S.; Choi, Y.-S.; Guslienko, K. Y.; Jung, H.; Fischer, P.

    2008-10-01

    The universal criterion for ultrafast vortex core switching between core-up and -down vortex bi-states in soft magnetic nanodots was empirically investigated by micromagnetic simulations and combined with an analytical approach. Vortex-core switching occurs whenever the velocity of vortex core motion reaches a critical value, which is {nu}{sub c} = 330 {+-} 37 m/s for Permalloy, as estimated from numerical simulations. This critical velocity was found to be {nu}{sub c} = {eta}{sub c}{gamma} {radical}A{sub ex} with A{sub ex} the exchange stiffness, {gamma} the gyromagnetic ratio, and an estimated proportional constant {eta}{sub c} = 1.66 {+-} 0.18. This criterion does neither depend on driving force parameters nor on the dimension or geometry of the magnetic specimen. The phase diagrams for the vortex core switching criterion and its switching time with respect to both the strength and angular frequency of circular rotating magnetic fields were derived, which offer practical guidance for implementing vortex core switching into future solid state information storage devices.

  16. Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells

    SciTech Connect (OSTI)

    Yun, Min Ju; Kim, Hee-Dong; Man Hong, Seok; Hyun Park, Ju; Su Jeon, Dong; Geun Kim, Tae

    2014-03-07

    The metal nanocrystals (NCs) embedded-NiN-based resistive random access memory cells are demonstrated using several metal NCs (i.e., Pt, Ni, and Ti) with different physical parameters in order to investigate the metal NC's dependence on resistive switching (RS) characteristics. First, depending on the electronegativity of metal, the size of metal NCs is determined and this affects the operating current of memory cells. If metal NCs with high electronegativity are incorporated, the size of the NCs is reduced; hence, the operating current is reduced owing to the reduced density of the electric field around the metal NCs. Second, the potential wells are formed by the difference of work function between the metal NCs and active layer, and the barrier height of the potential wells affects the level of operating voltage as well as the conduction mechanism of metal NCs embedded memory cells. Therefore, by understanding these correlations between the active layer and embedded metal NCs, we can optimize the RS properties of metal NCs embedded memory cells as well as predict their conduction mechanisms.

  17. Aerosol Observing System Greenhouse Gas (AOS GHG) Handbook

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Switch the pump back ON, and reattach the tubing. 12.6.1.2 Pump Failure In normal operation a pump's rocker switch should be illuminated, and there should be flow (XXX) and ...

  18. Cold fusion observed with ordinary water

    SciTech Connect (OSTI)

    Matsumoto, T. )

    1990-05-01

    This paper describes a cold fusion electrolysis experiment using ordinary water. A Ge(Li) detector is used to observe signals up to {approx}130 keV; these signals show the occurrence of fusion reactions in ordinary water. The mechanism for the emission of radiation is discussed by the Nattoh model.

  19. Bimodal switching field distributions in all-perpendicular spin-valve nanopillars

    SciTech Connect (OSTI)

    Gopman, D. B. Kent, A. D.; Bedau, D.; Katine, J. A.; Mangin, S.; Fullerton, E. E.

    2014-05-07

    Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K). This result is inconsistent with a model of thermal activation over a single perpendicular anisotropy barrier. The correlation between antiparallel to parallel and parallel to antiparallel switching fields increases to nearly 50% at low temperatures. This reflects random fluctuation of the shift of the free layer hysteresis loop between two different magnitudes, which may originate from changes in the dipole field from the polarizing layer. The magnitude of the loop shift changes by 25% and is correlated to transitions of the spin-valve into an antiparallel configuration.

  20. Tungsten disulphide based all fiber Q-switching cylindrical-vector beam generation

    SciTech Connect (OSTI)

    Lin, J.; Yan, K.; Zhou, Y.; Xu, L. X. Gu, C.; Zhan, Q. W.

    2015-11-09

    We proposed and demonstrated an all fiber passively Q-switching laser to generate cylindrical-vector beam, a two dimensional material, tungsten disulphide (WS{sub 2}), was adopted as a saturable absorber inside the laser cavity, while a few-mode fiber Bragg grating was used as a transverse mode-selective output coupler. The repetition rate of the Q-switching output pulses can be varied from 80 kHz to 120 kHz with a shortest duration of 958 ns. Attributed to the high damage threshold and polarization insensitivity of the WS{sub 2} based saturable absorber, the radially polarized beam and azimuthally polarized beam can be easily generated in the Q-switching fiber laser.

  1. Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

    DOE Patents [OSTI]

    Hohimer, J.P.

    1994-06-07

    A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure. 6 figs.

  2. Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

    DOE Patents [OSTI]

    Hohimer, John P. (Albuquerque, NM)

    1994-01-01

    A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.

  3. Fuel switching in the electricity sector under the EU ETS: Review and prospective

    SciTech Connect (OSTI)

    Delarue, E.; Voorspools, K.; D'haeseleer, W.

    2008-06-15

    The European Union has implemented the European Union emission trading scheme (EU ETS) as an instrument to facilitate greenhouse gas (GHG) emission abatement stipulated in the Kyoto protocol. Empirical data show that in the early stages of the EU ETS, the value of a ton of CO{sub 2} has already led to emission abatement through switching from coal to gas in the European electric power sector. In the second part of this paper, an electricity generation simulation model is used to perform simulations on the switching behavior in both the first and the second trading periods of the EU ETS. In 2005, the reduction in GHG emissions in the electric power sector due to EU ETS is estimated close to 88 Mton. For the second trading period, a European Union allowance (EUA) price dependent GHG reduction curve has been determined. The obtained switching potential turns out to be significant, up to 300 Mton/year, at sufficiently high EUA prices.

  4. Small autonomous passively Q-switched Nd{sup 3+}:YAG laser with a Cr{sup 4+}:YAG Q switch emitting pulse trains

    SciTech Connect (OSTI)

    Buzinov, N M; Dmitriev, Valentin G; Zabavin, V N; Kazakov, A A; Maslov, A A; Spitsyn, E M

    2007-04-30

    The energy and time characteristics of a passively Q-switched Nd{sup 3+}:YAG laser with a Cr{sup 4+}:YAG Q switch emitting pulse trains are studied and analysed theoretically. The description and technical parameters of a small autonomous laser with intracavity second-harmonic generation (ICSHG) in the pulse-train regime are presented. The laser provides a high total pulse-train energy for a relatively low peak power of a single pulse, stable operation in a wide temperature range, and has a small weight and size, which is convenient in operation. The enhanced reliability and stability of the laser operation are provided by its original technical design: the ICSHG scheme for type II phase matching without polarisers, the use of temperature-noncritical phase matching in KTP crystals, dust- and moisture-proof casing, and battery-operated pulsed power supply for the pump flashlamp. (lasers)

  5. U.S. Parking Facilities Cut Energy Use by 90 Percent, Switch 270 Million

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Square Feet to Energy Efficient Lighting | Department of Energy Parking Facilities Cut Energy Use by 90 Percent, Switch 270 Million Square Feet to Energy Efficient Lighting U.S. Parking Facilities Cut Energy Use by 90 Percent, Switch 270 Million Square Feet to Energy Efficient Lighting April 16, 2014 - 10:55am Addthis NEWS MEDIA CONTACT (202) 586-4940 WASHINGTON - As part of the Energy Department's commitment to helping U.S. businesses save money by saving energy, the Department's Better

  6. Binary and ternary gas mixtures for use in glow discharge closing switches

    DOE Patents [OSTI]

    Hunter, S.R.; Christophorou, L.G.

    1988-04-27

    Highly efficient binary and ternary gas mixtures for use in diffuse glow discharge closing switches are disclosed. The binary mixtures are combinations of helium or neon and selected perfluorides. The ternary mixtures are combinations of helium, neon, or argon, a selected perfluoride, and a small amount of gas that exhibits enhanced ionization characteristics. These mixtures are shown to be the optimum choices for use in diffuse glow discharge closing switches by virtue if the combines physio-electric properties of the mixture components. 9 figs.

  7. Photochemical switching behavior of azofunctionalized polymer liquid crystal/SiO{sub 2} composite photonic crystal

    SciTech Connect (OSTI)

    Moritsugu, M.; Kim, S. N.; Ogata, T.; Nonaka, T.; Kurihara, S.; Kubo, S.; Segawa, H.; Sato, O.

    2006-10-09

    A photochemically tunable photonic crystal was prepared by infiltrating azopolymer liquid crystal in a SiO{sub 2} inverse opal structure. The SiO{sub 2} inverse opal film obtained reflected a light corresponding to the periodicity as well as the refractive indices of the inverse opal structure. Linearly polarized light irradiation shifted the reflection band to longer wavelength more than 15 nm. This is caused by the formation of anisotropic molecular orientation of the azopolymer. The switched state was stable in the dark, and the reversible switching of the reflection band can be achieved by the linearly and circularly polarized light irradiations.

  8. Origin of magnetic switching field distribution in bit patterned media based on pre-patterned substrates

    SciTech Connect (OSTI)

    Pfau, B.; Guenther, C. M.; Eisebitt, S.; Guehrs, E.; Hauet, T.; Yang, H.; Vinh, L.; Xu, X.; Yaney, D.; Hellwig, O.; Rick, R.

    2011-08-08

    Using a combination of synchrotron radiation based magnetic imaging and high-resolution transmission electron microscopy we reveal systematic correlations between the magnetic switching field and the internal nanoscale structure of individual islands in bit patterned media fabricated by Co/Pd-multilayer deposition onto pre-patterned substrates. We find that misaligned grains at the island periphery are a common feature independent of the island switching field, while irregular island shapes and misaligned grains specifically extending into the center of an island are systematically correlated with a reduced island reversal field.

  9. Electro-optic harmonic conversion to switch a laser beam out of a cavity

    DOE Patents [OSTI]

    Haas, Roger A.; Henesian, Mark A.

    1987-01-01

    The invention is a switch to permit a laser beam to escape a laser cavity through the use of an externally applied electric field across a harmonic conversion crystal. Amplification takes place in the laser cavity, and then the laser beam is switched out by the laser light being harmonically converted with dichroic or polarization sensitive elements present to alter the optical path of the harmonically converted laser light. Modulation of the laser beam can also be accomplished by varying the external electric field.

  10. Spin-torque switching of a nano-magnet using giant spin hall effect

    SciTech Connect (OSTI)

    Penumatcha, Ashish V. Das, Suprem R.; Chen, Zhihong; Appenzeller, Joerg

    2015-10-15

    The Giant Spin Hall Effect(GSHE) in metals with high spin-orbit coupling is an efficient way to convert charge currents to spin currents, making it well-suited for writing information into magnets in non-volatile magnetic memory as well as spin-logic devices. We demonstrate the switching of an in-plane CoFeB magnet using a combination of GSHE and an external magnetic field. The magnetic field dependence of the critical current is used to estimate the spin hall angle with the help of a thermal activation model for spin-transfer torque switching of a nanomagnet.

  11. Electrode with transparent series resistance for uniform switching of optical modulation devices

    DOE Patents [OSTI]

    Tench, D. Morgan; Cunningham, Michael A.; Kobrin, Paul H.

    2008-01-08

    Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.

  12. Optimization of spin-torque switching using AC and DC pulses

    SciTech Connect (OSTI)

    Dunn, Tom; Kamenev, Alex

    2014-06-21

    We explore spin-torque induced magnetic reversal in magnetic tunnel junctions using combined AC and DC spin-current pulses. We calculate the optimal pulse times and current strengths for both AC and DC pulses as well as the optimal AC signal frequency, needed to minimize the Joule heat lost during the switching process. The results of this optimization are compared against numeric simulations. Finally, we show how this optimization leads to different dynamic regimes, where switching is optimized by either a purely AC or DC spin-current, or a combination AC/DC spin-current, depending on the anisotropy energies and the spin-current polarization.

  13. New Switches for Utility-Scale Inverters: First In-Class Demonstration of a Completely New Type of SiC Bipolar Switch (15kV-20kV) for Utility-Scale Inverters

    SciTech Connect (OSTI)

    2011-12-31

    Solar ADEPT Project: The SiCLAB is developing a new power switch for utility-scale PV inverters that would improve the performance and significantly reduce the size, weight, and energy loss of PV systems. A power switch controls the electrical energy flowing through an inverter, which takes the electrical current from a PV solar panel and converts it into the type and amount of electricity that is compatible with the electric grid. SiCLAB is using silicon carbide (SiC) semiconductors in its new power switches, which are more efficient than the silicon semiconductors used to conduct electricity in most conventional power switches today. Switches with SiC semiconductors can operate at much higher temperatures, as well as higher voltage and power levels than silicon switches. SiC-based power switches are also smaller than those made with silicon alone, so they result in much smaller and lighter electrical devices. In addition to their use in utility-scale PV inverters, SiCLABs new power switches can also be used in wind turbines, railways, and other smart grid applications.

  14. Earth System Observations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4 Earth System Observations Research comprises Earth, ocean, and atmospheric sciences to better understand and predict climate change's impact on ecosystems and to study subsurface geological materials and their interactions. Deploying research facilities globally Forecasting forests' responses to climate change Monitoring terrestrial ecosystems Contact Us Group Leader Claudia Mora Email Deputy Group Leader Bob Roback Email Profile pages header Search our Profile pages Investigating carbon

  15. Safety Observations Achieve Results

    Energy Science and Technology Software Center (OSTI)

    2000-01-16

    The SOAR web application provides a multi-checklist capability where focused observations can be created to address risk-likely work environments, tasks, etc. The SOAR web application has numerous reports to sort the data by key word, multiple factors (i.e., location, team, behavior, checklist, work environment, etc.), and the highest frequency of behaviors and error-likely predecessors, etc. Other performance indicators are also provided.

  16. Rock mechanics design in mining and tunneling

    SciTech Connect (OSTI)

    Bieniawski, Z.T.

    1984-01-01

    This book introduces the design process as applied to rock mechanics aspects of underground mining and tunneling. Topics covered include a historical perspective, the design process in engineering, empirical methods of design, observational methods of design, and guided design.

  17. Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gao, Xujiao; Mamaluy, Denis; Mickel, Patrick R.; Marinella, Matthew

    2015-09-08

    In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill outmore » a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.« less

  18. Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors

    SciTech Connect (OSTI)

    Gao, Xujiao; Mamaluy, Denis; Mickel, Patrick R.; Marinella, Matthew

    2015-09-08

    In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill out a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.

  19. An overview of the video switch management system for AVLIS experiments

    SciTech Connect (OSTI)

    Palasek, R.L.; Killian, M.J.; Zimmerman, M.D.

    1991-09-01

    The use of video images in the AVLIS systems is pervasive. Video images are taken, and displayed for functions such as pointing and centering, surveying (finding beam location), examining overlap of beams, and diagnostic analyses. The process laser light is generated, converted, tuned, amplified, split, and recombined in many stages; each stage relies on video images for operation, control and feedback. Without the ability to bring these many images together into one control room, operation and diagnostics of the AVLIS processes would be practically impossible. Of all auxiliary systems in the AVLIS process, video service is probably second only to the safety interlock system in importance. The video switch management computer system was needed to implement a virtual switch, where no commercial cross point switch was large enough or of practical cost. The system routes images to remote operator stations, integrates control of video image switching into the control of process devices, and reduces the cost and rack space needs of hardware controllers in work areas where there are numerous monitors. Access to remote images allow both operators and experimenters in one area to see images from other areas of the light chain. In some experiments, the process is physically distributed across the laboratory; problem resolution is facilitated if personnel at distant stations can see and talk about the same image simultaneously.

  20. Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces

    DOE Patents [OSTI]

    Sullivan, James S.; Hawkins, Steven A.

    2012-09-04

    An improved photoconductive switch having a SiC or other wide band gap substrate material with opposing contoured profile cavities which have a contoured profile selected from one of Rogowski, Bruce, Chang, Harrison, and Ernst profiles, and two electrodes with matching contoured-profile convex interface surfaces.

  1. FERROELECTRIC SWITCH FOR A HIGH-POWER Ka-BAND ACTIVE PULSE COMPRESSOR

    SciTech Connect (OSTI)

    Hirshfield, Jay L.

    2013-12-18

    Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW μs-length Ka-band pulses to be compressed in time by a factor-of-9 and multiplied in amplitude to generate 200 MW peak power pulses. Such high-power pulses could be used for testing and evaluation of high-gradient mm-wave accelerator structures, for example. Evaluation of the switch design was carried out with an X-band (11.43 GHz) prototype, built to incorporate all the features required for the Ka-band version.

  2. OLiMPS. OpenFlow Link-layer MultiPath Switching

    SciTech Connect (OSTI)

    Newman, Harvey B.; Barczyk, Artur; Bredel, Michael

    2014-11-17

    The OLiMPS project’s goal was the development of an OpenFlow controller application allowing load balancing over multiple switched paths across a complex network topology. The second goal was to integrate the controller with Dynamic Circuit Network systems such as ESnet’s OSCARS. Both goals were achieved successfully, as laid out in this report.

  3. EECBG Success Story: Texas County "Flips The Switch" On New Energy-Efficient Complex

    Broader source: Energy.gov [DOE]

    More than 350 residents and students celebrated the grand opening of the first “green” building in Hidalgo County, Texas. The switch signified the county’s achievement in improving how public buildings are designed, built and operated, as well as its ongoing efforts to promote environmental sustainability. Learn more.

  4. Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path

    DOE Patents [OSTI]

    Nelson, Scott D.

    2016-05-10

    A photoconductive switch having a wide bandgap semiconductor material substrate between opposing electrodes, with one of the electrodes having an aperture or apertures at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate, so as to geometrically constrain the conductivity path to within the triple junction region.

  5. Differentially-charged and sequentially-switched square-wave pulse forming network

    DOE Patents [OSTI]

    North, G.G.; Vogilin, G.E.

    1980-04-01

    Disclosed is a pulse forming network for delivering a high-energy square-wave pulse to a load, including a series of inductive-capacitive sections wherein the capacitors are differentially charged higher further from the load. Each charged capacitor is isolated from adjacent sections and the load by means of a normally open switch at the output of each section. The switch between the load and the closest section to the load is closed to begin discharge of the capacitor in that section into the load. During discharge of each capacitor, the voltage thereacross falls to a predetermined potential with respect to the potential across the capacitor in the next adjacent section further from the load. When this potential is reached, it is used to close the switch in the adjacent section further from the load and thereby apply the charge in that section to the load through the adjacent section toward the load. Each successive section further from the load is sequentially switched in this manner to continuously and evenly supply energy to the load over the period of the pulse, with the differentially charged capacitors providing higher potentials away from the load to compensate for the voltage drop across the resistance of each inductor. This arrangement is low in cost and yet provides a high-energy pulse in an acceptable square-wave form. 5 figs.

  6. Differentially-charged and sequentially-switched square-wave pulse forming network

    DOE Patents [OSTI]

    North, George G. [Stockton, CA; Vogilin, George E. [Livermore, CA

    1980-04-01

    A pulse forming network for delivering a high-energy square-wave pulse to a load, including a series of inductive-capacitive sections wherein the capacitors are differentially charged higher further from the load. Each charged capacitor is isolated from adjacent sections and the load by means of a normally open switch at the output of each section. The switch between the load and the closest section to the load is closed to begin discharge of the capacitor in that section into the load. During discharge of each capacitor, the voltage thereacross falls to a predetermined potential with respect to the potential across the capacitor in the next adjacent section further from the load. When this potential is reached, it is used to close the switch in the adjacent section further from the load and thereby apply the charge in that section to the load through the adjacent section toward the load. Each successive section further from the load is sequentially switched in this manner to continuously and evenly supply energy to the load over the period of the pulse, with the differentially charged capacitors providing higher potentials away from the load to compensate for the voltage drop across the resistance of each inductor. This arrangement is low in cost and yet provides a high-energy pulse in an acceptable square-wave form.

  7. Evaluating the Rationale for the Utility-Accessible External Disconnect Switch: Preprint

    SciTech Connect (OSTI)

    Coddington, M. H.

    2008-05-01

    This paper describes the utility-accessible alternating current (AC) external disconnect switch (EDS) for distributed generators, including photovoltaic (PV) systems, which is a hardware feature that allows a utility's employees to manually disconnect a customer-owned generator from the electricity grid.

  8. Conducting mechanisms of forming-free TiW/Cu{sub 2}O/Cu memristive devices

    SciTech Connect (OSTI)

    Yan, P.; Li, Y.; Hui, Y. J.; Zhong, S. J.; Zhou, Y. X.; Xu, L.; Liu, N.; Qian, H.; Sun, H. J. Miao, X. S.

    2015-08-24

    P-type Cu{sub 2}O is a promising CMOS-compatible candidate to fabricate memristive devices for next-generation memory, logic and neuromorphic computing. In this letter, the microscopic switching and conducting mechanisms in TiW/Cu{sub 2}O/Cu memristive devices have been thoroughly investigated. The bipolar resistive switching behaviors without an electro-forming process are ascribed to the formation and rupture of the conducting filaments composed of copper vacancies. In the low resistive state, the transport of electrons in the filaments follows Mott's variable range hopping theory. When the devices switch back to high resistive state, the coexistence of Schottky emission at the Cu/Cu{sub 2}O interface and electron hopping between the residual filaments is found to dominate the conducting process. Our results will contribute to the further understanding and optimization of p-type memristive materials.

  9. AEC Lowman Station - coal switching and magnesium-enhanced lime scrubbing to lower operating costs

    SciTech Connect (OSTI)

    Inkenhaus, W.; Babu, M.; Smith, K.; Loper, L.

    1997-12-31

    AEC`s Lowman Station is located in Leroy, Alabama. There are three coal-fired boilers at this station. Unit 1 is capable of generating 85 MW without a flue gas desulfurization, FGD, system. Units 2 and 3, with a total of 516 MW output capacity, are equipped with FGD systems. The FGD plant was designed for wet limestone FGD with natural oxidation. Lowman Station burned low sulfur, 1.3 to 1.8% sulfur, coal. In January of 1996 AEC switched Units 2 and 3 from limestone to magnesium-enhanced lime FGD operation. It was determined that the plant could take advantage of the higher SO{sub 2} removal efficiency of the magnesium-enhanced lime system. Major benefits resulting from this conversion were AEC`s ability to switch to a lower cost high sulfur coal while meeting the stringent SO{sub 2} emission requirements. Power cost savings resulted from the lower liquid to gas ratio required by the magnesium-enhanced lime process. Three recirculation pumps per module were reduced to a single operating pump per module, lowering the scrubber pressure drop. Significant cost reduction in the operating costs of the ball mill was realized due to modifications made to slake lime instead of grinding limestone. Prior to switching, personnel from AEC and Dravo Lime Company ran a four week test on magnesium-enhanced lime to obtain scrubber performance data including SO{sub 2} removal efficiencies on the modules while burning a 1.8% sulfur coal. This paper discusses the plant modifications that were needed to make the switch, cost justifications due to coal switching, and AEC`s operating experiences to date. AEC and Dravo Lime Company working together as a team conducted detailed cost studies, followed by extensive field tests and implemented the plant modifications. This plant continues to operate burning higher sulfur coal with the magnesium-enhanced lime FGD system.

  10. Designing a stochastic genetic switch by coupling chaos and bistability

    SciTech Connect (OSTI)

    Zhao, Xiang; Ouyang, Qi; Wang, Hongli

    2015-11-15

    In stem cell differentiation, a pluripotent stem cell becomes progressively specialized and generates specific cell types through a series of epigenetic processes. How cells can precisely determine their fate in a fluctuating environment is a currently unsolved problem. In this paper, we suggest an abstract gene regulatory network to describe mathematically the differentiation phenomenon featuring stochasticity, divergent cell fates, and robustness. The network consists of three functional motifs: an upstream chaotic motif, a buffering motif of incoherent feed forward loop capable of generating a pulse, and a downstream motif which is bistable. The dynamic behavior is typically a transient chaos with fractal basin boundaries. The trajectories take transiently chaotic journeys before divergently settling down to the bistable states. The ratio of the probability that the high state is achieved to the probability that the low state is reached can maintain a constant in a population of cells with varied molecular fluctuations. The ratio can be turned up or down when proper parameters are adjusted. The model suggests a possible mechanism for the robustness against fluctuations that is prominently featured in pluripotent cell differentiations and developmental phenomena.

  11. OBSERVING CORONAL NANOFLARES IN ACTIVE REGION MOSS

    SciTech Connect (OSTI)

    Testa, Paola; DeLuca, Ed; Golub, Leon; Korreck, Kelly; Weber, Mark; De Pontieu, Bart; Martinez-Sykora, Juan; Title, Alan; Hansteen, Viggo; Cirtain, Jonathan; Winebarger, Amy; Kobayashi, Ken; Kuzin, Sergey; Walsh, Robert; DeForest, Craig

    2013-06-10

    The High-resolution Coronal Imager (Hi-C) has provided Fe XII 193A images of the upper transition region moss at an unprecedented spatial ({approx}0.''3-0.''4) and temporal (5.5 s) resolution. The Hi-C observations show in some moss regions variability on timescales down to {approx}15 s, significantly shorter than the minute-scale variability typically found in previous observations of moss, therefore challenging the conclusion of moss being heated in a mostly steady manner. These rapid variability moss regions are located at the footpoints of bright hot coronal loops observed by the Solar Dynamics Observatory/Atmospheric Imaging Assembly in the 94 A channel, and by the Hinode/X-Ray Telescope. The configuration of these loops is highly dynamic, and suggestive of slipping reconnection. We interpret these events as signatures of heating events associated with reconnection occurring in the overlying hot coronal loops, i.e., coronal nanoflares. We estimate the order of magnitude of the energy in these events to be of at least a few 10{sup 23} erg, also supporting the nanoflare scenario. These Hi-C observations suggest that future observations at comparable high spatial and temporal resolution, with more extensive temperature coverage, are required to determine the exact characteristics of the heating mechanism(s).

  12. Internal pipe attachment mechanism

    DOE Patents [OSTI]

    Bast, R.M.; Chesnut, D.A.; Henning, C.D.; Lennon, J.P.; Pastrnak, J.W.; Smith, J.A.

    1994-12-13

    An attachment mechanism is described for repairing or extending fluid carrying pipes, casings, conduits, etc. utilizing one-way motion of spring tempered fingers to provide a mechanical connection between the attachment mechanism and the pipe. The spring tempered fingers flex to permit insertion into a pipe to a desired insertion depth. The mechanical connection is accomplished by reversing the insertion motion and the mechanical leverage in the fingers forces them outwardly against the inner wall of the pipe. A seal is generated by crushing a sealing assembly by the action of setting the mechanical connection. 6 figures.

  13. Internal pipe attachment mechanism

    DOE Patents [OSTI]

    Bast, Richard M.; Chesnut, Dwayne A.; Henning, Carl D.; Lennon, Joseph P.; Pastrnak, John W.; Smith, Joseph A.

    1994-01-01

    An attachment mechanism for repairing or extending fluid carrying pipes, casings, conduits, etc. utilizing one-way motion of spring tempered fingers to provide a mechanical connection between the attachment mechanism and the pipe. The spring tempered fingers flex to permit insertion into a pipe to a desired insertion depth. The mechanical connection is accomplished by reversing the insertion motion and the mechanical leverage in the fingers forces them outwardly against the inner wall of the pipe. A seal is generated by crushing a sealing assembly by the action of setting the mechanical connection.

  14. Current-induced spin-orbit torque switching of perpendicularly magnetized Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} structures

    SciTech Connect (OSTI)

    Akyol, Mustafa; Yu, Guoqiang; Alzate, Juan G.; Upadhyaya, Pramey; Li, Xiang; Wong, Kin L.; Khalili Amiri, Pedram; Wang, Kang L.; Ekicibil, Ahmet

    2015-04-20

    We study the effect of the oxide layer on current-induced perpendicular magnetization switching properties in Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} tri-layers. The studied structures exhibit broken in-plane inversion symmetry due to a wedged CoFeB layer, resulting in a field-like spin-orbit torque (SOT), which can be quantified by a perpendicular (out-of-plane) effective magnetic field. A clear difference in the magnitude of this effective magnetic field (H{sub z}{sup FL}) was observed between these two structures. In particular, while the current-driven deterministic perpendicular magnetic switching was observed at zero magnetic bias field in Hf|CoFeB|MgO, an external magnetic field is necessary to switch the CoFeB layer deterministically in Hf|CoFeB|TaO{sub x}. Based on the experimental results, the SOT magnitude (H{sub z}{sup FL} per current density) in Hf|CoFeB|MgO (?14.12?Oe/10{sup 7} A cm{sup ?2}) was found to be almost 13 larger than that in Hf|CoFeB|TaO{sub x} (?1.05?Oe/10{sup 7} A cm{sup ?2}). The CoFeB thickness dependence of the magnetic switching behavior, and the resulting ?H{sub z}{sup FL} generated by in-plane currents are also investigated in this work.

  15. Modeling the mechanical response of PBX 9501

    SciTech Connect (OSTI)

    Ragaswamy, Partha; Lewis, Matthew W; Liu, Cheng; Thompson, Darla G

    2010-01-01

    An engineering overview of the mechanical response of Plastic-Bonded eXplosives (PBXs), specifically PBX 9501, will be provided with emphasis on observed mechanisms associated with different types of mechanical testing. Mechanical tests in the form of uniaxial tension, compression, cyclic loading, creep (compression and tension), and Hopkinson bar show strain rate and temperature dependence. A range of mechanical behavior is observed which includes small strain recoverable response in the form of viscoelasticity; change in stiffness and softening beyond peak strength due to damage in the form microcracks, debonding, void formation and the growth of existing voids; inelastic response in the form of irrecoverable strain as shown in cyclic tests, and viscoelastic creep combined with plastic response as demonstrated in creep and recovery tests. The main focus of this paper is to elucidate the challenges and issues involved in modeling the mechanical behavior of PBXs for simulating thermo-mechanical responses in engineering components. Examples of validation of a constitutive material model based on a few of the observed mechanisms will be demonstrated against three point bending, split Hopkinson pressure bar and Brazilian disk geometry.

  16. Fermi Large Area Telescope Observations of the Supernova Remnant...

    Office of Scientific and Technical Information (OSTI)

    Fermi Large Area Telescope Observations of the Supernova Remnant G8.7-0.1 Citation Details ... Language: English Subject: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 72 PHYSICS ...

  17. Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

    SciTech Connect (OSTI)

    Fang, Runchen; Yu, Shimeng; Gonzalez Velo, Yago; Chen, Wenhao; Holbert, Keith E.; Kozicki, Michael N.; Barnaby, Hugh

    2014-05-05

    The total ionizing dose (TID) effect of gamma-ray (γ-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ∼5.2 Mrad (HfO{sub 2}) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy γ-ray exposure.

  18. Domain wall assisted magnetization switching in (111) oriented L1{sub 0} FePt grown on a soft magnetic metallic glass

    SciTech Connect (OSTI)

    Kaushik, Neelam; Sharma, Parmanand; Yubuta, Kunio; Makino, Akihiro; Inoue, Akihisa

    2010-08-16

    We report on growth and magnetic properties of exchange-coupled (111)-L1{sub 0} FePt hard/CoFeTaB soft magnetic metallic glass bilayered structure processed at lower temperature ({approx}400 deg. C). Single phaselike hysteresis loops with tailorable coercivity (<8.2 kOe) in out of plane direction are obtained. The magnetization switching mechanism is identified as domain wall assisted. In views of excellent nanofabrication abilities of metallic glass thin film and the ability to grow preferred oriented L1{sub 0} FePt, the present bilayered structure is very promising for the fabrication of high density bit--patterned magnetic recording media and other spintronic devices.

  19. Fuel switching from wood to LPG can benefit the environment

    SciTech Connect (OSTI)

    Nautiyal, Sunil Kaechele, Harald

    2008-11-15

    The Himalaya in India is one of the world's biodiversity hotspots. Various scientific studies have reported and proven that many factors are responsible for the tremendous decline of the Himalayan forests. Extraction of wood biomass from the forests for fuel is one of the factors, as rural households rely entirely on this for their domestic energy. Efforts continue for both conservation and development of the Himalayan forests and landscape. It has been reported that people are still looking for more viable solutions that could help them to improve their lifestyle as well as facilitate ecosystem conservation and preservation of existing biodiversity. In this direction, we have documented the potential of the introduction of liquefied petroleum gas (LPG), which is one of the solutions that have been offered to the local people as a substitute for woodfuel to help meet their domestic energy demand. The results of the current study found dramatic change in per capita woodfuel consumption in the last two decades in the villages where people are using LPG. The outcome showed that woodfuel consumption had been about 475 kg per capita per year in the region, but after introduction of LPG, this was reduced to 285 kg per capita per year in 1990-1995, and was further reduced to 46 kg per capita per year in 2000-2005. Besides improving the living conditions of the local people, this transformation has had great environmental consequences. Empirical evidence shows that this new paradigm shift is having positive external effects on the surrounding forests. Consequently, we have observed a high density of tree saplings and seedlings in adjacent forests, which serves as an assessment indicator of forest health. With the help of the current study, we propose that when thinking about a top-down approach to conservation, better solutions, which are often ignored, should be offered to local people.

  20. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches

    SciTech Connect (OSTI)

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

    2014-09-15

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ?40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  1. Voltage switching of a VO{sub 2} memory metasurface using ionic gel

    SciTech Connect (OSTI)

    Goldflam, M. D.; Liu, M. K.; Chapler, B. C.; Stinson, H. T.; Sternbach, A. J.; McLeod, A. S.; Basov, D. N.; Zhang, J. D.; Geng, K.; Royal, M.; Jokerst, N. M.; Smith, D. R.; Kim, Bong-Jun; Averitt, R. D.; Kim, H-T.

    2014-07-28

    We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO{sub 2}) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO{sub 2} layer. Positive and negative voltage application can selectively tune the metasurface resonance into the “off” or “on” state by pushing the VO{sub 2} into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO{sub 2} based devices suggests that this voltage-induced switching originates primarily from electrochemical effects related to oxygen migration across the electrolyte–VO{sub 2} interface.

  2. Switching coordination of distributed dc-dc converters for highly efficient photovoltaic power plants

    DOE Patents [OSTI]

    Agamy, Mohammed; Elasser, Ahmed; Sabate, Juan Antonio; Galbraith, Anthony William; Harfman Todorovic, Maja

    2014-09-09

    A distributed photovoltaic (PV) power plant includes a plurality of distributed dc-dc converters. The dc-dc converters are configured to switch in coordination with one another such that at least one dc-dc converter transfers power to a common dc-bus based upon the total system power available from one or more corresponding strings of PV modules. Due to the coordinated switching of the dc-dc converters, each dc-dc converter transferring power to the common dc-bus continues to operate within its optimal efficiency range as well as to optimize the maximum power point tracking in order to increase the energy yield of the PV power plant.

  3. Robust random number generation using steady-state emission of gain-switched laser diodes

    SciTech Connect (OSTI)

    Yuan, Z. L. Lucamarini, M.; Dynes, J. F.; Frhlich, B.; Plews, A.; Shields, A. J.

    2014-06-30

    We demonstrate robust, high-speed random number generation using interference of the steady-state emission of guaranteed random phases, obtained through gain-switching a semiconductor laser diode. Steady-state emission tolerates large temporal pulse misalignments and therefore significantly improves the interference quality. Using an 8-bit digitizer followed by a finite-impulse-response unbiasing algorithm, we achieve random number generation rates of 8 and 20?Gb/s, for laser repetition rates of 1 and 2.5?GHz, respectively, with a 20% tolerance in the interferometer differential delay. We also report a generation rate of 80?Gb/s using partially phase-correlated short pulses. In relation to the field of quantum key distribution, our results confirm the gain-switched laser diode as a suitable light source, capable of providing phase-randomized coherent pulses at a clock rate of up to 2.5?GHz.

  4. Diode-laser-side-pumped Nd:YAG Q-switch TEM{sub 00} laser

    SciTech Connect (OSTI)

    Wang Weimin; Yang Chenglong; Tang Chun; Cheng Jinyan; Yang Senlin; Liao Yinyan

    1996-12-31

    The diode laser side pumped E-O Q-switch Nd:YAG laser was described that produced energy 0.36-mJ/pulse, 7-ns pulse width, pulse repetition rates 50-Hz, TEM{sub 00} mode. The laser has a zigzag slab geometry, side pumped with a quasi-CW 15W diode bar. The authors used a 1.1% Nd:YAG Brewster-cut seven-bounce thin trapezoidal slab that was 1.2mm thick. Using a cylindrical lens (f = 1.6mm), it made the diode laser couple in the slab. The laser resonator was a plane-concave cavity, radius of mirror curvature was 3m. The cavity length was about 20cm. The plane output mirror transitivity was T = 0.1. They decided to the beam quality M{sup 2} = 1.1. Q-switch laser slope efficiency was 19%.

  5. Industrial process fuel switching analysis. Topical report, September 1990-March 1991

    SciTech Connect (OSTI)

    Not Available

    1991-06-01

    The study was undertaken to develop accurate, up-to-date profiles of process heat energy consumption and assess the fuel switching capability from natural gas to No. 6 oil for the industrial sector. Energy profiles of drying, calcining, clay firing, petroleum refining, copper smelting, chemical fluid heating, steel heating, iron melting, iron smelting, and ferrous heat treating processes were developed. The natural gas capacity switchable to No. 6 residual oil was also determined. It was determined that 18% (262 trillion Btu) of the natural gas capacity was convertible to No. 6 oil in these processes. Fuel switching capability of No. 6 oil is on the decline in many of the industrial processes. This is due to: replacement of aging equipment capable to burning both natural gas and No. 6 oil, availability and cost effectiveness of natural gas utilization, and emission standards set by amendments to the Clean Air Act and other environmental regulations.

  6. Irreversible magnetization switching at the onset of superconductivity in a superconductor ferromagnet hybrid

    SciTech Connect (OSTI)

    Curran, P. J.; Bending, S. J.; Kim, J.; Satchell, N.; Witt, J. D. S.; Burnell, G.; Flokstra, M. G.; Lee, S. L.; Cooper, J. F. K.; Kinane, C. J.; Langridge, S.; Isidori, A.; Eschrig, M.; Pugach, N.

    2015-12-28

    We demonstrate that the magnetic state of a superconducting spin valve, that is normally controlled with an external magnetic field, can also be manipulated by varying the temperature which increases the functionality and flexibility of such structures as switching elements. In this case, switching is driven by changes in the magnetostatic energy due to spontaneous Meissner screening currents forming in the superconductor below the critical temperature. Our scanning Hall probe measurements also reveal vortex-mediated pinning of the ferromagnetic domain structure due to the pinning of quantized stray fields in the adjacent superconductor. The ability to use temperature as well as magnetic field to control the local magnetisation structure raises the prospect of potential applications in magnetic memory devices.

  7. Electron-Beam Switches For A High Peak Power Sled-II Pulse Compressor

    SciTech Connect (OSTI)

    Hirshfield, Jay, L.

    2015-12-02

    Omega-P demonstrated triggered electron-beam switches on the L=2 m dual-delay-line X-band pulse compressor at Naval Research Laboratory (NRL). In those experiments, with input pulses of up to 9 MW from the Omega-P/NRL X-band magnicon, output pulses having peak powers of 140-165 MW and durations of 16-20 ns were produced, with record peak power gains M of 18-20. Switch designs are described based on the successful results that should be suitable for use with the existing SLAC SLED-II delay line system, to demonstrate C=9, M=7, and n>>78%, yielding 173ns compressed pulses with peak powers up to 350MW with input of a single 50-MW.

  8. Methods and apparatus for optical switching using electrically movable optical fibers

    DOE Patents [OSTI]

    Peterson, Kenneth A.

    2007-03-13

    Methods and apparatuses for electrically controlled optical switches are presented. An electrically controlled optical switch includes a fixture formed using a laminated dielectric material, a first optical fiber having a fixed segment supported by the fixture and a movable segment extending into a cavity, a second optical fiber having a fixed segment supported by the fixture and an extended segment where an optical interconnect may be established between the first optical fiber and the second optical fiber, and a first electrical actuator functionally coupled to the fixture and the first fiber which alters a position of the moveable segment, based upon a control signal, for changing a state of the optical interconnect between one of two states.

  9. Resistive switching phenomena in TiO{sub x} nanoparticle layers for memory applications

    SciTech Connect (OSTI)

    Goren, Emanuelle; Tsur, Yoed; Ungureanu, Mariana; Zazpe, Raul; Rozenberg, Marcelo; Hueso, Luis E.; Casanova, Flix; Stoliar, Pablo

    2014-10-06

    Electrical characteristics of a Co/ TiO{sub x}/Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO{sub 2} layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO{sub x} nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.

  10. HYDRAULIC SERVO CONTROL MECHANISM

    DOE Patents [OSTI]

    Hussey, R.B.; Gottsche, M.J. Jr.

    1963-09-17

    A hydraulic servo control mechanism of compact construction and low fluid requirements is described. The mechanism consists of a main hydraulic piston, comprising the drive output, which is connected mechanically for feedback purposes to a servo control piston. A control sleeve having control slots for the system encloses the servo piston, which acts to cover or uncover the slots as a means of controlling the operation of the system. This operation permits only a small amount of fluid to regulate the operation of the mechanism, which, as a result, is compact and relatively light. This mechanism is particuiarly adaptable to the drive and control of control rods in nuclear reactors. (auth)

  11. Moving Beyond Semiconductors for Next-Generation Electric Switches | U.S.

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DOE Office of Science (SC) Moving Beyond Semiconductors for Next-Generation Electric Switches Basic Energy Sciences (BES) BES Home About Research Facilities Science Highlights Benefits of BES Funding Opportunities Basic Energy Sciences Advisory Committee (BESAC) Community Resources Contact Information Basic Energy Sciences U.S. Department of Energy SC-22/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3081 F: (301) 903-6594 E: Email Us More Information »

  12. Towards Understanding Electronic Switching in Magnets | U.S. DOE Office of

    Office of Science (SC) Website

    Science (SC) Understanding Electronic Switching in Magnets Basic Energy Sciences (BES) BES Home About Research Facilities Science Highlights Benefits of BES Funding Opportunities Basic Energy Sciences Advisory Committee (BESAC) Community Resources Contact Information Basic Energy Sciences U.S. Department of Energy SC-22/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3081 F: (301) 903-6594 E: Email Us More Information » 09.01.13 Towards Understanding

  13. Identifying Opportunities and Impacts of Fuel Switching in the Industrial Sector

    SciTech Connect (OSTI)

    Jain, Ramesh C.; Jamison, Keith; Thomas, Daniel E.

    2006-08-01

    The underlying purpose of this white paper is to examine fuel switching opportunities in the U.S. industrial sector and make strategic recommendations—leading to application of the best available technologies and development of new technologies—that will introduce fuel use flexibility as an economically feasible option for plant operators, as a means to condition local fuel demands and a hedge against the local rises in fuel prices.

  14. A switched capacitor array based system for high-speed calorimetry

    SciTech Connect (OSTI)

    Levi, M.; Bebek, C.; Ely, R.; Jared, R.; Kipnis, I.; Kirsten, F.; Kleinfelder, S.; Merrick, T.; Milgrome, O.

    1991-12-01

    A sixteen channel analog transient recorder with 256 cells per channel has been fabricated as an integrated circuit. The circuit uses switched capacitor array technology to achieve simultaneous read/write capability and twelve bit dynamic range. Combined with highly parallel analog-to-digital converter and readout control circuitry being developed this system should satisfy the demanding electronics requirements for calorimeter detectors at the SSC. The system design and test results are presented.

  15. Switching and intrinsic position bistability of soliton beams in chiral nematic liquid crystals

    SciTech Connect (OSTI)

    Beeckman, Jeroen; Madani, Abbas; Vanbrabant, Pieter J. M.; Henneaux, Pierre; Gorza, Simon-Pierre; Haelterman, Marc

    2011-03-15

    We study theoretically and experimentally the propagation of light beams in chiral nematic liquid crystals. Despite the rather complex refractive index distribution of these crystals, their reorientational nonlinearity can compensate for diffraction, leading to robust solitonlike beams propagating along helical trajectories. We demonstrate that, due to a symmetry-breaking instability of the liquid crystal structure, these beams undergo abrupt switching and bistability, features that are of potential interest for applications to all-optical signal processing.

  16. Structure of an Unusually Small RNA Switch Provides Insight into the

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Minimal Requirements for Microbial Gene Regulation Structure of an Unusually Small RNA Switch Provides Insight into the Minimal Requirements for Microbial Gene Regulation The emergence of drug-resistant microbes represents a major impediment in the treatment of bacterial infections. Resistance to first-choice drugs has become problematic for respiratory infections, AIDS, tuberculosis, malaria and diarrheal diseases, which are top killers among infectious agents. When second- and third-choice

  17. Get Current: Switch on Clean Energy Coloring Book | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Coloring Book Get Current: Switch on Clean Energy Coloring Book Below is information about the student activity/lesson plan from your search. Grades K-4 Subject Energy Basics Summary Kids can be part of the Clean Energy Generation: This coloring book teaches them about renewable energies such as wind, water and solar, as well as good habits in energy efficiency to practice at home. (Available in both English and Spanish.) Curriculum Science, Language Arts Plan Time Varies by activity Materials

  18. Utility-Interconnected Photovoltaic Systems: Evaluating the Rationale for the Utility-Accessible External Disconnect Switch

    SciTech Connect (OSTI)

    Coddington, M.; Margolis, R.M.; Aabakken, J.

    2008-01-01

    The utility-accessible alternating current (AC) external disconnect switch (EDS) for distributed generators, including photovoltaic (PV) systems, is a hardware feature that allows a utility?s employees to manually disconnect a customer-owned generator from the electricity grid. This paper examines the utility-accessible EDS debate in the context of utility-interactive PV systems for residential and small commercial installations. It also evaluates the rationale for EDS requirements.

  19. Examination of the technical potential of near-infrared switching thermochromic windows for commercial building applications

    SciTech Connect (OSTI)

    Hoffmann, Sabine; Lee, Eleanor S.; Clavero, Cesar

    2013-12-01

    Current thermochromic windows modulate solar transmission primarily within the visible range, resulting in reduced space-conditioning energy use but also reduced daylight, thereby increasing lighting energy use compared to conventional static, near-infrared selective, low-emittance windows. To better understand the energy savings potential of improved thermochromic devices, a hypothetical near-infrared switching thermochromic glazing was defined based on guidelines provided by the material science community. EnergyPlus simulations were conducted on a prototypical large office building and a detailed analysis was performed showing the progression from switching characteristics to net window heat flow and perimeter zone loads and then to perimeter zone heating, ventilation, and air-conditioning (HVAC) and lighting energy use for a mixed hot/cold climate and a hot, humid climate in the US. When a relatively high daylight transmission is maintained when switched (Tsol = 0.10-0.50, Tvis = 0.30-0.60) and if coupled with a low-e inboard glazing layer (e = 0.04), the hypothetical thermochromic window with a low critical switching temperature range (14-20°C) achieved reductions in total site annual energy use of 14.0-21.1 kWh/m2-floor-yr or 12-14%2 for moderate- to large-area windows (WWR≥0.30) in Chicago and 9.8-18.6 kWh/m2-floor-yr or 10-17%3 for WWR≥0.45 in Houston compared to an unshaded spectrally-selective, low-e window (window E1) in south-, east-, and west-facing perimeter zones. If this hypothetical thermochromic window can be offered at costs that are competitive to conventional low-e windows and meet aesthetic requirements defined by the building industry and end users, then the technology is likely to be a viable energy-efficiency option for internal load dominated commercial buildings.

  20. Mechanical seal assembly

    DOE Patents [OSTI]

    Kotlyar, Oleg M.

    2001-01-01

    An improved mechanical seal assembly is provided for sealing rotating shafts with respect to their shaft housings, wherein the rotating shafts are subject to substantial axial vibrations. The mechanical seal assembly generally includes a rotating sealing ring fixed to the shaft, a non-rotating sealing ring adjacent to and in close contact with the rotating sealing ring for forming an annular seal about the shaft, and a mechanical diode element that applies a biasing force to the non-rotating sealing ring by means of hemispherical joint. The alignment of the mechanical diode with respect to the sealing rings is maintained by a series of linear bearings positioned axially along a desired length of the mechanical diode. Alternative embodiments include mechanical or hydraulic amplification components for amplifying axial displacement of the non-rotating sealing ring and transferring it to the mechanical diode.

  1. Mechanical seal assembly

    DOE Patents [OSTI]

    Kotlyar, Oleg M.

    2002-01-01

    An improved mechanical seal assembly is provided for sealing rotating shafts with respect to their shaft housings, wherein the rotating shafts are subject to substantial axial vibrations. The mechanical seal assembly generally includes a rotating sealing ring fixed to the shaft, a non-rotating sealing ring adjacent to and in close contact with the rotating sealing ring for forming an annular seal about the shaft, and a mechanical diode element that applies a biasing force to the non-rotating sealing ring by means of hemispherical joint. The alignment of the mechanical diode with respect to the sealing rings is maintained by a series of linear bearings positioned axially along a desired length of the mechanical diode. Alternative embodiments include mechanical or hydraulic amplification components for amplifying axial displacement of the non-rotating sealing ring and transfering it to the mechanical diode.

  2. Fundamental Frequency Switching Control of Seven-Level Hybrid Cascaded H-bridge Multilevel Inverter

    SciTech Connect (OSTI)

    Du, Zhong; Chiasson, John N; Ozpineci, Burak; Tolbert, Leon M

    2009-01-01

    This paper presents a cascaded H-bridge multilevel inverter that can be implemented using only a single dc power source and capacitors. Standard cascaded multilevel inverters require n dc sources for 2n + 1 levels. Without requiring transformers, the scheme proposed here allows the use of a single dc power source (e.g., a battery or a fuel cell stack) with the remaining n-1 dc sources being capacitors, which is referred to as hybrid cascaded H-bridge multilevel inverter (HCMLI) in this paper. It is shown that the inverter can simultaneously maintain the dc voltage level of the capacitors and choose a fundamental frequency switching pattern to produce a nearly sinusoidal output. HCMLI using only a single dc source for each phase is promising for high-power motor drive applications as it significantly decreases the number of required dc power supplies, provides high-quality output power due to its high number of output levels, and results in high conversion efficiency and low thermal stress as it uses a fundamental frequency switching scheme. This paper mainly discusses control of seven-level HCMLI with fundamental frequency switching control and how its modulation index range can be extended using triplen harmonic compensation.

  3. Multiple mechanisms of PCB neurotoxicity

    SciTech Connect (OSTI)

    Carpenter, D.O.; Stoner, C.T.; Lawrence, D.A.

    1996-12-31

    Polychlorinated biphenyls (PCBs) have been implicated in cancer, but many of the symptoms in humans exposed to PCBs are related to the nervous system and behavior. We demonstrated three different direct mechanisms whereby PCBs are neurotoxic in rats. By using flow cytometry, we demonstrated that the orthosubstituted PCB congener 2,4,4{prime}, but neither TCDD nor the coplanar PCB congener 3,4,5,3{prime},4{prime}, causes rapid death of cerebellar granule cells. The ortho-substituted congener 2,4,4{prime} reduced long-term potentiation, an indicator of cognitive potential, in hippocampal brain slices, but a similar effect was observed for the coplanar congener 3,4,3{prime},4{prime}, indicating that this effect may be caused by both ortho- and coplanar congeners by mechanisms presumably not mediated via the Ah receptor. It was previously shown that some ortho-substituted PCB congeners cause a reduction in levels of the neurotransmitter dopamine, and we present in vitro and in vivo evidence that this is due to reduction of synthesis of dopamine via inhibition of the enzyme tyrosine hydroxylase. Thus, PCBs have a variety of mechanisms of primary neurotoxicity, and neurotoxicity is a characteristic of ortho-substituted, non-dioxin-like congeners as well as some coplanar congeners. The relative contribution of each of these mechanisms to the loss of cognitive function in humans exposed to PCBs remains to be determined. 42 refs., 3 figs., 1 tab.

  4. Resistive switching in ultra-thin La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrRuO{sub 3} superlattices

    SciTech Connect (OSTI)

    Jammalamadaka, S. Narayana; Vanacken, Johan; Moshchalkov, V. V.

    2014-07-21

    Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers with macroscopic world. Here, we report the study of the resistive switching characteristics of a hybrid structure made out of a superlattice with ultrathin layers of two ferromagnetic metallic oxides, La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) and SrRuO{sub 3} (SRO). Bipolar resistive switching memory effects are measured on these LSMO/SRO superlattices, and the observed switching is explainable by ohmic and space charge-limited conduction laws. It is evident from the endurance characteristics that the on/off memory window of the cell is greater than 14, which indicates that this cell can reliably distinguish the stored information between high and low resistance states. The findings may pave a way to the construction of devices based on nonvolatile resistive memory effects.

  5. Spin Observables in Reactions with Radioactive Ion Beams

    SciTech Connect (OSTI)

    Galindo-Uribarri, Alfredo {nmn}; Urrego Blanco, Juan Pablo

    2007-01-01

    Polarization observables in nuclear reactions with exotic nuclei will provide important information concerning structural properties of nuclei and reaction mechanisms. We are currently engaged in exploring the use of polarization observables with radioactive ion beams and in the development of a polarized cryogenic target.

  6. Growth and self-assembly of BaTiO{sub 3} nanocubes for resistive switching memory cells

    SciTech Connect (OSTI)

    Chu, Dewei, E-mail: D.Chu@unsw.edu.au [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Lin, Xi; Younis, Adnan [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Li, Chang Ming [Chongqing Key Lab for Advanced Materials and Clean Energies of Techonologies Dean, Institute for Clean Energy and Advanced Materials, Southwest University, Chongqing (China); Dang, Feng [Research Center for Materials Back Casting Technology (MBT Center), Nagoya University, Nagoya 464-8603 (Japan); Li, Sean [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia)

    2014-06-01

    In this work, the self-assembled BaTiO{sub 3} nanocubes based resistive switching memory capacitors are fabricated with hydrothermal and drop-coating approaches. The device exhibits excellent bipolar resistance switching characteristics with ON/OFF ratio of 5870, better reliability and stability over various polycrystalline BaTiO{sub 3} nanostructures. It is believed that the inter cube junctions is responsible for such a switching behaviour and it can be described by the filament model. The effect of film thickness on switching ratio (ON/OFF) was also investigated in details. - Graphical abstract: This work describes a novel resistive switching memory cell based on self-assembled BaTiO{sub 3} nanocubes. - Highlights: BaTiO{sub 3} nanocubes were prepared by one step facile hydrothermal method. Self-assembled BaTiO{sub 3} nanocubes thin films were obtained by drop-coating approach. The BaTiO{sub 3} nanocubes show excellent resistive switching properties for memory applications.

  7. Effect of the top electrode materials on the resistive switching characteristics of TiO{sub 2} thin film

    SciTech Connect (OSTI)

    Oh, Sang Chul; Jung, Ho Yong; Lee, Heon

    2011-06-15

    Various metals, such as Pt, stainless steel (SUS), Al, Ni, and Ti, were used as a top electrode (TE) to evaluate the dependency of the resistive switching characteristics on the TE of the metal/TiO{sub 2}/Pt structure. The variation of the chemical composition of TiO{sub 2} in the metal/TiO{sub 2}/Pt structure before and after switching was examined to identify the factors affecting the resistive switching characteristics of the samples with various TE materials. In the case of TE/TiO{sub 2}/Pt structures showing unstable resistive switching behavior, e.g., those with the Al, Ni, and Ti TEs, secondary ion mass spectrometry revealed an increase in the oxygen concentration at the interface area between the TE metal and TiO{sub 2}. This suggests that the oxidation reaction at the interface between the TE metal and TiO{sub 2} might cause the TE/TiO{sub 2}/Pt structure to exhibit unstable resistive switching characteristics. According to these results, the oxidation reaction at the interface between the metal TE and TiO{sub 2} thin film is a primary factor affecting the resistive switching characteristics of TiO{sub 2}-based Resistive Random Access Memory devices.

  8. Radiation and bias switch-induced charge dynamics in Al{sub 2}O{sub 3}-based metal-oxide-semiconductor structures

    SciTech Connect (OSTI)

    Sambuco Salomone, L. Kasulin, A.; Carbonetto, S. H.; Garcia-Inza, M. A.; Redin, E. G.; Berbeglia, F.; Lipovetzky, J.; Faign, A.; Campabadal, F.

    2014-11-07

    Charge trapping dynamics induced by exposition to ?-ray ({sup 60}Co) radiation and bias switching in MOS capacitors with atomic layer deposited Al{sub 2}O{sub 3} as insulating layer was studied. Electrical characterization prior to irradiation showed voltage instabilities due to electron tunneling between the substrate and preexisting defects inside the dielectric layer. Real-time capacitance-voltage (C-V) measurements during irradiation showed two distinct regimes: For short times, the response is strongly bias dependent and linear with log(t), consistent with electron trapping/detrapping; for long times, the voltage shift is dominated by the radiation-induced hole capture being always negative and linear with dose. A simple model that takes into account these two phenomena can successfully reproduce the observed results.

  9. Computational Structural Mechanics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    load-2 TRACC RESEARCH Computational Fluid Dynamics Computational Structural Mechanics Transportation Systems Modeling Computational Structural Mechanics Overview of CSM Computational structural mechanics is a well-established methodology for the design and analysis of many components and structures found in the transportation field. Modern finite-element models (FEMs) play a major role in these evaluations, and sophisticated software, such as the commercially available LS-DYNA® code, is

  10. Determination of Mechanical Properties

    Office of Scientific and Technical Information (OSTI)

    ... Monofilament Laminates," paper 61-AV56 presented at American Society of Mechanical Engineers Aviation Conference, Los Angeles, California (March 1961). 21. G. S. Springer and s. ...

  11. Monroe Thomas, Mechanical Technician

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and endstation moves. Though he's training another mechanical technician to operate the crane, it's Monroe who is called upon for critical moves. He plays a key role in...

  12. Heavy Mobile Equipment Mechanic

    Broader source: Energy.gov [DOE]

    Join the Bonneville Power Administration (BPA) for a challenging and rewarding career, while working, living, and playing in the Pacific Northwest. The Heavy Mobile Equipment Mechanic (HMEM)...

  13. Collapse Mechanisms Of Masonry Structures

    SciTech Connect (OSTI)

    Zuccaro, G.; Rauci, M.

    2008-07-08

    The paper outlines a possible approach to typology recognition, safety check analyses and/or damage measuring taking advantage by a multimedia tool (MEDEA), tracing a guided procedure useful for seismic safety check evaluation and post event macroseismic assessment. A list of the possible collapse mechanisms observed in the post event surveys on masonry structures and a complete abacus of the damages are provided in MEDEA. In this tool a possible combination between a set of damage typologies and each collapse mechanism is supplied in order to improve the homogeneity of the damages interpretation. On the other hand recent researches of one of the author have selected a number of possible typological vulnerability factors of masonry buildings, these are listed in the paper and combined with potential collapse mechanisms to be activated under seismic excitation. The procedure takes place from simple structural behavior models, derived from the Umbria-Marche earthquake observations, and tested after the San Giuliano di Puglia event; it provides the basis either for safety check analyses of the existing buildings or for post-event structural safety assessment and economic damage evaluation. In the paper taking advantage of MEDEA mechanisms analysis, mainly developed for the post event safety check surveyors training, a simple logic path is traced in order to approach the evaluation of the masonry building safety check. The procedure starts from the identification of the typological vulnerability factors to derive the potential collapse mechanisms and their collapse multipliers and finally addresses the simplest and cheapest strengthening techniques to reduce the original vulnerability. The procedure has been introduced in the Guide Lines of the Regione Campania for the professionals in charge of the safety check analyses and the buildings strengthening in application of the national mitigation campaign introduced by the Ordinance of the Central Government n. 3362

  14. Observation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    tearing mode deceleration and locking due to eddy currents induced in a conducting shell B. E. Chapman Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 R. Fitzpatrick Institute for Fusion Studies, Department of Physics, University of Texas at Austin, Austin, Texas 78712 D. Craig Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 P. Martin Consorzio RFX, Associazione EURATOM-ENEA sulla Fusione, Corso Stati Uniti 4, 35127 Padova, Italy

  15. Observation

    Office of Scientific and Technical Information (OSTI)

    to an Orbital-Selective Mott Phase in A x Fe 2-y Se 2 (AK, Rb) Superconductors M. Yi, 1, 2 D. H. Lu, 3 R. Yu, 4 S. C. Riggs, 1, 2 J.-H. Chu, 1, 2 B. Lv, 5 Z. Liu, 1, 2 M. Lu,...

  16. Field observations and lessons learned

    SciTech Connect (OSTI)

    Nielsen, Joh B

    2010-01-01

    This presentation outlines observations and lessons learned from the Megaports program. It provides: (1) details of field and technical observations collected during LANL field activities at ports around the world and details of observations collected during radiation detections system testing at Los Alamos National Laboratory; (2) provides suggestions for improvement and efficiency; and (3) discusses possible program execution changes for more effective operations.

  17. State observer for synchronous motors

    DOE Patents [OSTI]

    Lang, Jeffrey H.

    1994-03-22

    A state observer driven by measurements of phase voltages and currents for estimating the angular orientation of a rotor of a synchronous motor such as a variable reluctance motor (VRM). Phase voltages and currents are detected and serve as inputs to a state observer. The state observer includes a mathematical model of the electromechanical operation of the synchronous motor. The characteristics of the state observer are selected so that the observer estimates converge to the actual rotor angular orientation and velocity, winding phase flux linkages or currents.

  18. Mechanical code comparator

    DOE Patents [OSTI]

    Peter, Frank J.; Dalton, Larry J.; Plummer, David W.

    2002-01-01

    A new class of mechanical code comparators is described which have broad potential for application in safety, surety, and security applications. These devices can be implemented as micro-scale electromechanical systems that isolate a secure or otherwise controlled device until an access code is entered. This access code is converted into a series of mechanical inputs to the mechanical code comparator, which compares the access code to a pre-input combination, entered previously into the mechanical code comparator by an operator at the system security control point. These devices provide extremely high levels of robust security. Being totally mechanical in operation, an access control system properly based on such devices cannot be circumvented by software attack alone.

  19. Effect of thermo-mechanical treatment on mechanical and elastic...

    Office of Scientific and Technical Information (OSTI)

    Effect of thermo-mechanical treatment on mechanical and elastic properties of Ti-36Nb-5Zr alloy Title: Effect of thermo-mechanical treatment on mechanical and elastic properties of ...

  20. The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems

    SciTech Connect (OSTI)

    Guo, Jiquan; /SLAC

    2009-03-20

    In the past decades, there has been increasing interest in pulsed high power RF sources for building high-gradient high-energy particle accelerators. Passive RF pulse compression systems have been used in many applications to match the available RF sources to the loads requiring higher RF power but a shorter pulse. Theoretically, an active RF pulse compression system has the advantage of higher efficiency and compactness over the passive system. However, the key component for such a system an element capable of switching hundreds of megawatts of RF power in a short time compared to the compressed pulse width is still an open problem. In this dissertation, we present a switch module composed of an active window based on the bulk effects in semiconductor, a circular waveguide three-port network and a movable short plane, with the capability to adjust the S-parameters before and after switching. The RF properties of the switch module were analyzed. We give the scaling laws of the multiple-element switch systems, which allow the expansion of the system to a higher power level. We present a novel overmoded design for the circular waveguide three-port network and the associated circular-to-rectangular mode-converter. We also detail the design and synthesis process of this novel mode-converter. We demonstrate an electrically controlled ultra-fast high power X-band RF active window built with PIN diodes on high resistivity silicon. The window is capable of handling multi-megawatt RF power and can switch in 2-300ns with a 1000A current driver. A low power active pulse compression experiment was carried out with the switch module and a 375ns resonant delay line, obtaining 8 times compression gain with a compression ratio of 20.