National Library of Energy BETA

Sample records for observed switching mechanism

  1. Micro electro mechanical system optical switching

    DOE Patents [OSTI]

    Thorson, Kevin J; Stevens, Rick C; Kryzak, Charles J; Leininger, Brian S; Kornrumpf, William P; Forman, Glenn A; Iannotti, Joseph A; Spahn, Olga B; Cowan, William D; Dagel, Daryl J

    2013-12-17

    The present disclosure includes apparatus, system, and method embodiments that provide micro electo mechanical system optical switching and methods of manufacturing switches. For example, one optical switch embodiment includes at least one micro electro mechanical system type pivot mirror structure disposed along a path of an optical signal, the structure having a mirror and an actuator, and the mirror having a pivot axis along a first edge and having a second edge rotatable with respect to the pivot axis, the mirror being capable of and arranged to be actuated to pivot betweeen a position parallel to a plane of an optical signal and a position substantially normal to the plane of the optical signal.

  2. Hybrid plasmonic nanodevices: Switching mechanism for the nonlinear emission

    SciTech Connect (OSTI)

    Bragas, Andrea V.; Singh, Mahi R.

    2014-03-31

    Control of the light emission at the nanoscale is of central interest in nanophotonics due to the many applications in very different fields, ranging from quantum information to biophysics. Resonant excitation of surface plasmon polaritons in metal nanoparticles create nanostructured and enhanced light fields around those structures, which produce their strong interaction in a hybrid nanodevice with other plasmonic or non-plasmonic objects. This interaction may in turn also modulate the far field with important consequences in the applications. We show in this paper that the nonlinear emission from semiconductor quantum dots is strongly affected by the close presence of metal nanoparticles, which are resonantly excited. Using a pulsed laser, optical second harmonic is generated in the quantum dot, and it is highly enhanced when the laser is tuned around the nanoparticle plasmon resonance. Even more interesting is the demonstration of a switching mechanism, controlled by an external continuous-wave field, which can enhance or extinguish the SH signal, even when the pulsed laser is always on. Experimental observations are in excellent agreement with the theoretical calculations, based on the dipole-dipole near-field coupling of the objects forming the hybrid system.

  3. Photo-induced micro-mechanical optical switch

    DOE Patents [OSTI]

    Rajic, Slobodan (Knoxville, TN); Datskos, Panagiotis George (Knoxville, TN); Egert, Charles M. (late of Oak Ridge, TN)

    2002-01-01

    An optical switch is formed by introducing light lengthwise to a microcantilever waveguide directed toward a second waveguide. The microcantilever is caused to bend by light emitted from a laser diode orthogonal to the microcantilever and at an energy above the band gap, which induces stress as a result of the generation of free carriers. The bending of the waveguide directs the carrier frequency light to a second receptor waveguide or to a non-responsive surface. The switch may be combined in an array to perform multiple switching functions rapidly and at low energy losses.

  4. Electro-mechanical heat switch for cryogenic applications

    DOE Patents [OSTI]

    van den Berg, Marcel L. (Oakland, CA); Batteux, Jan D. (Hayward, CA); Labov, Simon E. (Berkeley, CA)

    2003-01-01

    A heat switch includes two symmetric jaws. Each jaw is comprised of a link connected at a translatable joint to a flexible arm. Each arm rotates about a fixed pivot, and has an articulated end including a thermal contact pad connected to a heat sink. The links are joined together at a translatable main joint. To close the heat switch, a closing solenoid is actuated and forces the main joint to an over-center position. This movement rotates the arms about their pivots, respectively, forces each of them into a stressed configuration, and forces the thermal contact pads towards each other and into compressive contact with a cold finger. The closing solenoid is then deactivated. The heat switch remains closed due to a restoring force generated by the stressed configuration of each arm, until actuation of an opening solenoid returns the main joint to its starting open-switch position.

  5. Insight into the molecular switch mechanism of human Rab5a from molecular dynamics simulations

    SciTech Connect (OSTI)

    Wang, Jing-Fang; Shanghai Center for Bioinformation Technology, 100 Qinzhou Road, Shanghai 200235; Gordon Life Science Institute, 13784 Torrey Del Mar Drive, San Diego, CA 92130 ; Chou, Kuo-Chen

    2009-12-18

    Rab5a is currently a most interesting target because it is responsible for regulating the early endosome fusion in endocytosis and possibly the budding process. We utilized longtime-scale molecular dynamics simulations to investigate the internal motion of the wild-type Rab5a and its A30P mutant. It was observed that, after binding with GTP, the global flexibility of the two proteins is increasing, while the local flexibility in their sensitive sites (P-loop, switch I and II regions) is decreasing. Also, the mutation of Ala30 to Pro30 can cause notable flexibility variations in the sensitive sites. However, this kind of variations is dramatically reduced after binding with GTP. Such a remarkable feature is mainly caused by the water network rearrangements in the sensitive sites. These findings might be of use for revealing the profound mechanism of the displacements of Rab5a switch regions, as well as the mechanism of the GDP dissociation and GTP association.

  6. Photovoltaic switching mechanism in lateral structure hybrid perovskite solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yuan, Yongbo; Chae, Jungseok; Shao, Yuchuan; Wang, Qi; Xiao, Zhengguo; Centrone, Andrea; Huang, Jinsong

    2015-06-05

    In this study, long range electromigration of methylammonium ions (MA+) in methyl ammonium lead tri-iodide (MAPbI3) film is observed directly using the photo­thermal induced resonance technique. The electromigration of MA+ leads to the formation of a lateral p-i-n structure, which is the origin of the switchable photovoltaic effect in MAPbI3 perovskite devices.

  7. Photovoltaic switching mechanism in lateral structure hybrid perovskite solar cells

    SciTech Connect (OSTI)

    Yuan, Yongbo; Chae, Jungseok; Shao, Yuchuan; Wang, Qi; Xiao, Zhengguo; Centrone, Andrea; Huang, Jinsong

    2015-06-05

    In this study, long range electromigration of methylammonium ions (MA+) in methyl ammonium lead tri-iodide (MAPbI3) film is observed directly using the photothermal induced resonance technique. The electromigration of MA+ leads to the formation of a lateral p-i-n structure, which is the origin of the switchable photovoltaic effect in MAPbI3 perovskite devices.

  8. Switch Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Switch Switch Run end at 6pm at 6pm at 6am 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Wed Thu Fri Sat Sun Mon Tue Wed Thu Fri Sat Sun Mon Tue Wed Thu Fri Sat Sun Mon Tue Wed Thu Fri Sat Sun Mon Tue Wed Thu Day Inst. start CAMP: Epp L338 L357 Com L272 Chap Night Com Feldkamp Cavalleri Cav H H 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 Fri Sat Sun Mon Tue Wed Thu Fri Sat Sun Mon Tue Wed Thu Fri Sat Sun Mon Tue Wed Thu

  9. Molecular-Mechanical Switching at the Nanoparticle-Solvent Interface: Practice and Theory

    SciTech Connect (OSTI)

    Coskun, Ali; Wesson, Paul J.; Klajn, Rafal; Trabolsi, Ali; Fang, Lei; Olson, Mark A.; Dey, Sanjeev K.; Grzybowski, Bartosz A.; Stoddart, J. Fraser

    2010-01-01

    A range (Au, Pt, Pd) of metal nanoparticles (MNPs) has been prepared and functionalized with (a) redox-active stalks containing tetrathiafulvalene (TTF) units, (b) [2]pseudorotaxanes formed between these stalks and cyclobis(paraquat-p-phenylene) (CBPQT4+) rings, and (c) bistable [2]rotaxane molecules where the dumbbell component contains a 1,5-dioxynaphthalene (DNP) unit, as well as a TTF unit, encircled by a CBPQT4+ ring. It transpires that the molecules present in (a) and (c) and the supermolecules described in (b) retain their switching characteristics, previously observed in solution, when they are immobilized onto MNPs. Moreover, their oxidation potentials depend on the fraction, ?, of the molecules or supermolecules on the surface of the nanoparticles. A variation in ? affects the oxidation potentials of the TTF units to the extent that switching can be subjected to fine tuning as a result. Specifically, increasing ? results in positive shifts (i) in the oxidation potentials of the TTF unit in (a)-(c) and (ii) the reduction potentials of the CBPQT4+ rings in (c). These shifts can be attributed to an increase in the electrostatic potential surrounding the MNPs. Both the magnitude and the direction of these shifts are reproduced by a model, based on the Poisson-Boltzmann equation coupled with charge-regulating boundary conditions. Furthermore, the kinetics of relaxation from the metastable state coconformation (MSCC) to the ground-state coconformation (GSCC) of the bistable [2]rotaxane molecules also depends on ?, as well as on the nanoparticle diameter. Increasing either of these parameters accelerates the rate of relaxation from the MSCC to the GSCC. This rate is a function of (i) the activation energy for the relaxation process associated with the bistable [2]rotaxane molecules in solution and (ii) the electrostatic potential surrounding the MNPs. The electrostatic potential depends on (i) the diameter of the MNPs, (ii) the amount of the bistable [2]rotaxane molecules on the surface of the MNPs, and (iii) the equilibrium distribution of the CBPQT4+ rings between the DNP and TTF recognition sites in the GSCC. This electrostatic potential has also been quantified using the Poisson-Boltzmann equation, leading to faithful estimates of the rate constants.

  10. Latching micro optical switch

    DOE Patents [OSTI]

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  11. Advanced Soft Switching Inverter for Reducing Switching and Power Losses |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Soft Switching Inverter for Reducing Switching and Power Losses Advanced Soft Switching Inverter for Reducing Switching and Power Losses 2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C. PDF icon ape_06_lai.pdf More Documents & Publications Advanced Soft Switching Inverter for Reducing Switching and Power Losses Electro-thermal-mechanical Simulation and Reliability for

  12. Switch wear leveling

    DOE Patents [OSTI]

    Wu, Hunter; Sealy, Kylee; Gilchrist, Aaron

    2015-09-01

    An apparatus for switch wear leveling includes a switching module that controls switching for two or more pairs of switches in a switching power converter. The switching module controls switches based on a duty cycle control technique and closes and opens each switch in a switching sequence. The pairs of switches connect to a positive and negative terminal of a DC voltage source. For a first switching sequence a first switch of a pair of switches has a higher switching power loss than a second switch of the pair of switches. The apparatus includes a switch rotation module that changes the switching sequence of the two or more pairs of switches from the first switching sequence to a second switching sequence. The second switch of a pair of switches has a higher switching power loss than the first switch of the pair of switches during the second switching sequence.

  13. Optical Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    found in a fluorescent light bulb, is electrically conductive yet transparent to the NIF laser beam. This configuration allows for uniform switching across a large beam with a...

  14. Optical switches and switching methods

    DOE Patents [OSTI]

    Doty, Michael

    2008-03-04

    A device and method for collecting subject responses, particularly during magnetic imaging experiments and testing using a method such as functional MRI. The device comprises a non-metallic input device which is coupled via fiber optic cables to a computer or other data collection device. One or more optical switches transmit the subject's responses. The input device keeps the subject's fingers comfortably aligned with the switches by partially immobilizing the forearm, wrist, and/or hand of the subject. Also a robust nonmetallic switch, particularly for use with the input device and methods for optical switching.

  15. Nanomechanical switch for integration with CMOS logic.

    SciTech Connect (OSTI)

    Nordquist, Christopher Daniel; Wolfley, Steven L.; Baker, Michael Sean; Czaplewski, David A.; Wendt, Joel Robert; Kraus, Garth Merlin; de Boer, Maarten Pieter; Patrizi, Gary A.

    2008-11-01

    We designed, fabricated and measured the performance of nanoelectromechanical (NEMS) switches. Initial data are reported with one of the switch designs having a measured switching time of 400 ns and an operating voltage of 5 V. The switches operated laterally with unmeasurable leakage current in the 'off' state. Surface micromachining techniques were used to fabricate the switches. All processing was CMOS compatible. A single metal layer, defined by a single mask step, was used as the mechanical switch layer. The details of the modeling, fabrication and testing of the NEMS switches are reported.

  16. Acceleration switch

    DOE Patents [OSTI]

    Abbin, Jr., Joseph P. (Albuquerque, NM); Devaney, Howard F. (Cedar Crest, NM); Hake, Lewis W. (Albuquerque, NM)

    1982-08-17

    The disclosure relates to an improved integrating acceleration switch of the type having a mass suspended within a fluid filled chamber, with the motion of the mass initially opposed by a spring and subsequently not so opposed.

  17. Acceleration switch

    DOE Patents [OSTI]

    Abbin, Jr., Joseph P. (Albuquerque, NM); Middleton, John N. (Albuquerque, NM); Schildknecht, Harold E. (Albuquerque, NM)

    1981-01-01

    The disclosure relates to an improved acceleration switch, of the type having a mass suspended within a chamber, having little fluid damping at low g levels and high fluid damping at high g levels.

  18. Optical switch

    DOE Patents [OSTI]

    Reedy, R.P.

    1987-11-10

    An optical switching device is provided whereby light from a first glass fiber or a second glass fiber may be selectively transmitted into a third glass fiber. Each glass fiber is provided with a focusing and collimating lens system. In one mode of operation, light from the first glass fiber is reflected by a planar mirror into the third glass fiber. In another mode of operation, light from the second glass fiber passes directly into the third glass fiber. The planar mirror is attached to a rotatable table which is rotated to provide the optical switching. 3 figs.

  19. Percolation mechanism through trapping/de-trapping process at defect states for resistive switching devices with structure of Ag/Si{sub x}C{sub 1?x}/p-Si

    SciTech Connect (OSTI)

    Liu, Yanhong; Gao, Ping; Li, La; Peng, Wei [School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024 (China); Jiang, Xuening; Zhang, Jialiang [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024 (China)

    2014-08-14

    Pure Si{sub x}C{sub 1?x} (x?>?0.5) and B-containing Si{sub x}C{sub 1?x} (x?>?0.5) based resistive switching devices (RSD) with the structure of Ag/Si{sub x}C{sub 1?x}/p-Si were fabricated and their switching characteristics and mechanism were investigated systematically. Percolation mechanism through trapping/ de-trapping at defect states was suggested for the switching process. Through the introduction of B atoms into Si{sub x}C{sub 1?x}, the density of defect states was reduced, then, the SET and RESET voltages were also decreased. Based on the percolation theory, the dependence of SET/RESET voltage on the density of defect states was analyzed. These results supply a deep understanding for the SiC-based RSD, which have a potential application in extreme ambient conditions.

  20. Optical fiber switch

    DOE Patents [OSTI]

    Early, James W. (Los Alamos, NM); Lester, Charles S. (San Juan Pueblo, NM)

    2002-01-01

    Optical fiber switches operated by electrical activation of at least one laser light modulator through which laser light is directed into at least one polarizer are used for the sequential transport of laser light from a single laser into a plurality of optical fibers. In one embodiment of the invention, laser light from a single excitation laser is sequentially transported to a plurality of optical fibers which in turn transport the laser light to separate individual remotely located laser fuel ignitors. The invention can be operated electro-optically with no need for any mechanical or moving parts, or, alternatively, can be operated electro-mechanically. The invention can be used to switch either pulsed or continuous wave laser light.

  1. Advanced Soft Switching Inverter for Reducing Switching and Power...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Soft Switching Inverter for Reducing Switching and Power Losses Advanced Soft Switching Inverter for Reducing Switching and Power Losses 2009 DOE Hydrogen Program and Vehicle...

  2. Advanced Soft Switching Inverter for Reducing Switching and Power...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Soft Switching Inverter for Reducing Switching and Power Losses Advanced Soft Switching Inverter for Reducing Switching and Power Losses 2010 DOE Vehicle Technologies and Hydrogen...

  3. Radiation hard vacuum switch

    DOE Patents [OSTI]

    Boettcher, Gordon E. (Albuquerque, NM)

    1990-01-01

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  4. Observation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Velocity-Independent Electron Transport in the Reversed Field Pinch R. O'Connell, * D. J. Den Hartog, C. B. Forest, J. K. Anderson, T. M. Biewer, † B. E. Chapman, D. Craig, G. Fiksel, S. C. Prager, J. S. Sarff, and S. D. Terry ‡ Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA R.W. Harvey CompX, San Diego, California, USA (Received 16 December 2002; published 24 July 2003) Confinement of runaway electrons has been observed for the first time in a reversed

  5. Remote switch actuator

    DOE Patents [OSTI]

    Haas, Edwin Gerard; Beauman, Ronald; Palo, Jr., Stefan

    2013-01-29

    The invention provides a device and method for actuating electrical switches remotely. The device is removably attached to the switch and is actuated through the transfer of a user's force. The user is able to remain physically removed from the switch site obviating need for protective equipment. The device and method allow rapid, safe actuation of high-voltage or high-current carrying electrical switches or circuit breakers.

  6. Triggered plasma opening switch

    DOE Patents [OSTI]

    Mendel, Clifford W. (Albuquerque, NM)

    1988-01-01

    A triggerable opening switch for a very high voltage and current pulse includes a transmission line extending from a source to a load and having an intermediate switch section including a plasma for conducting electrons between transmission line conductors and a magnetic field for breaking the plasma conduction path and magnetically insulating the electrons when it is desired to open the switch.

  7. Resistive switching characteristics of polycrystalline SrTiO{sub 3} films

    SciTech Connect (OSTI)

    Jong Choi, Hyung; Won Park, Suk; Deok Han, Gwon; Hyung Shim, Joon; Na, Junhong; Kim, Gyu-Tae

    2014-06-16

    Strontium titanate (STO) thin films 90?nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800?C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (10{sup 8}10{sup 9}) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.

  8. Effective switching frequency multiplier inverter

    DOE Patents [OSTI]

    Su, Gui-Jia (Oak Ridge, TN); Peng, Fang Z. (Okemos, MI)

    2007-08-07

    A switching frequency multiplier inverter for low inductance machines that uses parallel connection of switches and each switch is independently controlled according to a pulse width modulation scheme. The effective switching frequency is multiplied by the number of switches connected in parallel while each individual switch operates within its limit of switching frequency. This technique can also be used for other power converters such as DC/DC, AC/DC converters.

  9. Solid state switch

    DOE Patents [OSTI]

    Merritt, Bernard T. (Livermore, CA); Dreifuerst, Gary R. (Livermore, CA)

    1994-01-01

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1500 A peak, 1.0 .mu.s pulsewidth, and 4500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry.

  10. Thermally actuated thermionic switch

    DOE Patents [OSTI]

    Barrus, Donald M.; Shires, Charles D.

    1988-01-01

    A thermally actuated thermionic switch which responds to an increase of temperature by changing from a high impedance to a low impedance at a predictable temperature set point. The switch has a bistable operation mode switching only on temperature increases. The thermionic material may be a metal which is liquid at the desired operation temperature and held in matrix in a graphite block reservoir, and which changes state (ionizes, for example) so as to be electrically conductive at a desired temperature.

  11. Thermally actuated thermionic switch

    DOE Patents [OSTI]

    Barrus, D.M.; Shires, C.D.

    1982-09-30

    A thermally actuated thermionic switch which responds to an increase of temperature by changing from a high impedance to a low impedance at a predictable temperature set point. The switch has a bistable operation mode switching only on temperature increases. The thermionic material may be a metal which is liquid at the desired operation temperature and held in matrix in a graphite block reservoir, and which changes state (ionizes, for example) so as to be electrically conductive at a desired temperature.

  12. Symmetry breaking and electrical frustration during tip-induced polarization switching in the non-polar cut of lithium niobate single crystals

    SciTech Connect (OSTI)

    Ievlev, Anton; Alikin, Denis O; Morozovska, A. N.; Varenyk, O. V.; Eliseev, E. A.; Kholkin, Andrei; Shur, Vladimir Ya.; Kalinin, Sergei V

    2015-01-01

    Polarization switching in ferroelectric materials is governed by a delicate interplay between bulk polarization dynamics and screening processes at surfaces and domain walls. Here we explore the mechanism of tip-induced polarization switching in the non-polar cuts of uniaxial ferroelectrics. In this case, in-plane component of polarization vector switches, allowing for detailed observations of resultant domain morphologies. We observe surprising variability of resultant domain morphologies stemming from fundamental instability of formed charged domain wall and associated electric frustration. In particular, we demonstrate that controlling vertical tip position allows the polarity of the switching to be controlled. This represents very unusual form of symmetry breaking where mechanical motion in vertical direction controls the lateral domain growth. The implication of these studies for ferroelectric devices and domain wall electronics are discussed.

  13. Alarm toe switch

    DOE Patents [OSTI]

    Ganyard, Floyd P. (Albuquerque, NM)

    1982-01-01

    An alarm toe switch inserted within a shoe for energizing an alarm circuit n a covert manner includes an insole mounting pad into which a miniature reed switch is fixedly molded. An elongated slot perpendicular to the reed switch is formed in the bottom surface of the mounting pad. A permanent cylindrical magnet positioned in the forward portion of the slot with a diameter greater than the pad thickness causes a bump above the pad. A foam rubber block is also positioned in the slot rearwardly of the magnet and holds the magnet in normal inoperative relation. A non-magnetic support plate covers the slot and holds the magnet and foam rubber in the slot. The plate minimizes bending and frictional forces to improve movement of the magnet for reliable switch activation. The bump occupies the knuckle space beneath the big toe. When the big toe is scrunched rearwardly the magnet is moved within the slot relative to the reed switch, thus magnetically activating the switch. When toe pressure is released the foam rubber block forces the magnet back into normal inoperative position to deactivate the reed switch. The reed switch is hermetically sealed with the magnet acting through the wall so the switch assembly S is capable of reliable operation even in wet and corrosive environments.

  14. Reusable fast opening switch

    DOE Patents [OSTI]

    Van Devender, John P. (Albuquerque, NM); Emin, David (Albuquerque, NM)

    1986-01-01

    A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and insulating states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

  15. Reusable fast opening switch

    DOE Patents [OSTI]

    Van Devender, J.P.; Emin, D.

    1983-12-21

    A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and metallic states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

  16. Mechanisms and observations of coronal dimming for the 201 August 7 event

    SciTech Connect (OSTI)

    Mason, James Paul; Woods, T. N.; Caspi, A.; Thompson, B. J.; Hock, R. A.

    2014-07-01

    Coronal dimming of extreme ultraviolet (EUV) emission has the potential to be a useful forecaster of coronal mass ejections (CMEs). As emitting material leaves the corona, a temporary void is left behind which can be observed in spectral images and irradiance measurements. The velocity and mass of the CMEs should impact the character of those observations. However, other physical processes can confuse the observations. We describe these processes and the expected observational signature, with special emphasis placed on the differences. We then apply this understanding to a coronal dimming event with an associated CME that occurred on 2010 August 7. Data from the Solar Dynamics Observatory's Atmospheric Imaging Assembly and EUV Variability Experiment (EVE) are used for observations of the dimming, while the Solar and Heliospheric Observatory's Large Angle and Spectrometric Coronagraph and the Solar Terrestrial Relations Observatory's COR1 and COR2 are used to obtain velocity and mass estimates for the associated CME. We develop a technique for mitigating temperature effects in coronal dimming from full-disk irradiance measurements taken by EVE. We find that for this event, nearly 100% of the dimming is due to mass loss in the corona.

  17. Reflective HTS switch

    DOE Patents [OSTI]

    Martens, Jon S. (Albuquerque, NM); Hietala, Vincent M. (Placitas, NM); Hohenwarter, Gert K. G. (Madison, WI)

    1994-01-01

    A HTS switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time.

  18. Reflective HTS switch

    DOE Patents [OSTI]

    Martens, J.S.; Hietala, V.M.; Hohenwarter, G.K.G.

    1994-09-27

    A HTS (High Temperature Superconductor) switch includes a HTS conductor for providing a superconducting path for an electrical signal and an serpentine wire actuator for controllably heating a portion of the conductor sufficiently to cause that portion to have normal, and not superconducting, resistivity. Mass of the portion is reduced to decrease switching time. 6 figs.

  19. Magnetoelectric switching of perpendicular exchange bias in Pt/Co/?-Cr{sub 2}O{sub 3}/Pt stacked films

    SciTech Connect (OSTI)

    Toyoki, Kentaro; Shiratsuchi, Yu Kobane, Atsushi; Nakatani, Ryoichi; Mitsumata, Chiharu; Kotani, Yoshinori; Nakamura, Tetsuya

    2015-04-20

    We report the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/?-Cr{sub 2}O{sub 3}/Pt stacked films. The perpendicular exchange bias was switched isothermally by the simultaneous application of magnetic and electric fields. The threshold electric field required to switch the perpendicular exchange bias was found to be inversely proportional to the magnetic field, which confirmed the magnetoelectric mechanism of the process. The observed temperature dependence of the threshold electric field suggested that the energy barrier of the antiferromagnetic spin reversal was significantly lower than that assuming the coherent rotation. Pulse voltage measurements indicated that the antiferromagnetic domain propagation dominates the switching process. These results suggest an analogy of the electric-field-induced magnetization with a simple ferromagnet.

  20. Erected mirror optical switch

    DOE Patents [OSTI]

    Allen, James J.

    2005-06-07

    A microelectromechanical (MEM) optical switching apparatus is disclosed that is based on an erectable mirror which is formed on a rotatable stage using surface micromachining. An electrostatic actuator is also formed on the substrate to rotate the stage and mirror with a high angular precision. The mirror can be erected manually after fabrication of the device and used to redirect an incident light beam at an arbitrary angel and to maintain this state in the absence of any applied electrical power. A 1.times.N optical switch can be formed using a single rotatable mirror. In some embodiments of the present invention, a plurality of rotatable mirrors can be configured so that the stages and mirrors rotate in unison when driven by a single micromotor thereby forming a 2.times.2 optical switch which can be used to switch a pair of incident light beams, or as a building block to form a higher-order optical switch.

  1. Generation mechanism of the slowly drifting narrowband structure in the type IV solar radio bursts observed by AMATERAS

    SciTech Connect (OSTI)

    Katoh, Y.; Nishimura, Y.; Kumamoto, A.; Ono, T.; Iwai, K.; Misawa, H.; Tsuchiya, F.

    2014-05-20

    We investigate the type IV burst event observed by AMATERAS on 2011 June 7, and reveal that the main component of the burst was emitted from the plasmoid eruption identified in the EUV images of the Solar Dynamics Observatory (SDO)/AIA. We show that a slowly drifting narrowband structure (SDNS) appeared in the burst's spectra. Using statistical analysis, we reveal that the SDNS appeared for a duration of tens to hundreds of milliseconds and had a typical bandwidth of 3 MHz. To explain the mechanism generating the SDNS, we propose wave-wave coupling between Langmuir waves and whistler-mode chorus emissions generated in a post-flare loop, which were inferred from the similarities in the plasma environments of a post-flare loop and the equatorial region of Earth's inner magnetosphere. We assume that a chorus element with a rising tone is generated at the top of a post-flare loop. Using the magnetic field and plasma density models, we quantitatively estimate the expected duration of radio emissions generated from coupling between Langmuir waves and chorus emissions during their propagation in the post-flare loop, and we find that the observed duration and bandwidth properties of the SDNS are consistently explained by the proposed generation mechanism. While observations in the terrestrial magnetosphere show that the chorus emissions are a group of large-amplitude wave elements generated naturally and intermittently, the mechanism proposed in the present study can explain both the intermittency and the frequency drift in the observed spectra.

  2. Fast superconducting magnetic field switch

    DOE Patents [OSTI]

    Goren, Y.; Mahale, N.K.

    1996-08-06

    The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles. 6 figs.

  3. Fast superconducting magnetic field switch

    DOE Patents [OSTI]

    Goren, Yehuda (Mountain View, CA); Mahale, Narayan K. (The Woodlands, TX)

    1996-01-01

    The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles.

  4. Photoconductive switch package

    DOE Patents [OSTI]

    Caporaso, George J

    2015-11-05

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  5. Photoconductive switch package

    DOE Patents [OSTI]

    Caporaso, George J.

    2015-10-27

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  6. Photoconductive switch package

    DOE Patents [OSTI]

    Ca[rasp, George J

    2013-10-22

    A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

  7. Solid state switch

    DOE Patents [OSTI]

    Merritt, B.T.; Dreifuerst, G.R.

    1994-07-19

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1,500 A peak, 1.0 [mu]s pulsewidth, and 4,500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry. 6 figs.

  8. An optical switch

    DOE Patents [OSTI]

    Christophorou, L.G.; Hunter, S.R.

    1987-04-30

    The invention is a gas mixture for a diffuse discharge switch having an electron attaching gas wherein electron attachment is brought about by indirect excitation of molecules to long live states by exposure to laser light. 3 figs.

  9. A radiation hard vacuum switch

    DOE Patents [OSTI]

    Boettcher, G.E.

    1988-07-19

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction. 3 figs.

  10. Thermionic gas switch

    DOE Patents [OSTI]

    Hatch, G.L.; Brummond, W.A.; Barrus, D.M.

    1984-04-05

    The present invention is directed to an improved temperature responsive thermionic gas switch utilizing a hollow cathode and a folded emitter surface area. The folded emitter surface area of the thermionic switch substantially increases the on/off ratio by changing the conduction surface area involved in the two modes thereof. The improved switch of this invention provides an on/off ratio of 450:1 compared to the 10:1 ratio of the prior known thermionic switch, while providing for adjusting the on current. In the improved switch of this invention the conduction area is made small in the off mode, while in the on mode the conduction area is made large. This is achieved by utilizing a folded hollow cathode configuration and utilizing a folded emitter surface area, and by making the dimensions of the folds small enough so that a space charge will develop in the convolutions of the folds and suppress unignited current, thus limiting the current carrying surface in the off mode.

  11. Switching power pulse system

    DOE Patents [OSTI]

    Aaland, K.

    1983-08-09

    A switching system for delivering pulses of power from a source to a load using a storage capacitor charged through a rectifier, and maintained charged to a reference voltage level by a transistor switch and voltage comparator. A thyristor is triggered to discharge the storage capacitor through a saturable reactor and fractional turn saturable transformer having a secondary to primary turn ratio N of n:l/n = n[sup 2]. The saturable reactor functions as a soaker'' while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor charges, and then switches to a low impedance state to dump the charge of the storage capacitor into the load through the coupling capacitor. The transformer is comprised of a multilayer core having two secondary windings tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe for a linear particle accelerator and capacitance of a pulse forming network. To hold off discharge of the capacitance until it is fully charged, a saturable core is provided around the resistive beampipe to isolate the beampipe from the capacitance until it is fully charged. 5 figs.

  12. Room temperature deformation mechanisms of alumina particles observed from in situ micro-compression and atomistic simulations.

    SciTech Connect (OSTI)

    Sarobol, Pylin; Chandross, Michael E.; Carroll, Jay D.; Mook, William M.; Bufford, Daniel Charles; Boyce, Brad L.; Hattar, Khalid Mikhiel; Kotula, Paul G.; Hall, Aaron Christopher

    2015-09-22

    Aerosol deposition (AD) is a solid-state deposition technology that has been developed to fabricate ceramic coatings nominally at room temperature. Sub-micron ceramic particles accelerated by pressurized gas impact, deform, and consolidate on substrates under vacuum. Ceramic particle consolidation in AD coatings is highly dependent on particle deformation and bonding; these behaviors are not well understood. In this work, atomistic simulations and in situ micro-compressions in the scanning electron microscope, and the transmission electron microscope (TEM) were utilized to investigate fundamental mechanisms responsible for plastic deformation/fracture of particles under applied compression. Results showed that highly defective micron-sized alumina particles, initially containing numerous dislocations or a grain boundary, exhibited no observable shape change before fracture/fragmentation. Simulations and experimental results indicated that particles containing a grain boundary only accommodate low strain energy per unit volume before crack nucleation and propagation. In contrast, nearly defect-free, sub-micron, single crystal alumina particles exhibited plastic deformation and fracture without fragmentation. Dislocation nucleation/motion, significant plastic deformation, and shape change were observed. Simulation and TEM in situ micro-compression results indicated that nearly defect-free particles accommodate high strain energy per unit volume associated with dislocation plasticity before fracture. As a result, the identified deformation mechanisms provide insight into feedstock design for AD.

  13. Room temperature deformation mechanisms of alumina particles observed from in situ micro-compression and atomistic simulations.

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sarobol, Pylin; Chandross, Michael E.; Carroll, Jay D.; Mook, William M.; Bufford, Daniel Charles; Boyce, Brad L.; Hattar, Khalid Mikhiel; Kotula, Paul G.; Hall, Aaron Christopher

    2015-09-22

    Aerosol deposition (AD) is a solid-state deposition technology that has been developed to fabricate ceramic coatings nominally at room temperature. Sub-micron ceramic particles accelerated by pressurized gas impact, deform, and consolidate on substrates under vacuum. Ceramic particle consolidation in AD coatings is highly dependent on particle deformation and bonding; these behaviors are not well understood. In this work, atomistic simulations and in situ micro-compressions in the scanning electron microscope, and the transmission electron microscope (TEM) were utilized to investigate fundamental mechanisms responsible for plastic deformation/fracture of particles under applied compression. Results showed that highly defective micron-sized alumina particles, initially containingmore » numerous dislocations or a grain boundary, exhibited no observable shape change before fracture/fragmentation. Simulations and experimental results indicated that particles containing a grain boundary only accommodate low strain energy per unit volume before crack nucleation and propagation. In contrast, nearly defect-free, sub-micron, single crystal alumina particles exhibited plastic deformation and fracture without fragmentation. Dislocation nucleation/motion, significant plastic deformation, and shape change were observed. Simulation and TEM in situ micro-compression results indicated that nearly defect-free particles accommodate high strain energy per unit volume associated with dislocation plasticity before fracture. As a result, the identified deformation mechanisms provide insight into feedstock design for AD.« less

  14. Switching power supply

    DOE Patents [OSTI]

    Mihalka, A.M.

    1984-06-05

    The invention is a repratable capacitor charging, switching power supply. A ferrite transformer steps up a dc input. The transformer primary is in a full bridge configuration utilizing power MOSFETs as the bridge switches. The transformer secondary is fed into a high voltage, full wave rectifier whose output is connected directly to the energy storage capacitor. The transformer is designed to provide adequate leakage inductance to limit capacitor current. The MOSFETs are switched to the variable frequency from 20 to 50 kHz to charge a capacitor from 0.6 kV. The peak current in a transformer primary and secondary is controlled by increasing the pulse width as the capacitor charges. A digital ripple counter counts pulses and after a preselected desired number is reached an up-counter is clocked.

  15. Microfabricated triggered vacuum switch

    DOE Patents [OSTI]

    Roesler, Alexander W. (Tijeras, NM); Schare, Joshua M. (Albuquerque, NM); Bunch, Kyle (Albuquerque, NM)

    2010-05-11

    A microfabricated vacuum switch is disclosed which includes a substrate upon which an anode, cathode and trigger electrode are located. A cover is sealed over the substrate under vacuum to complete the vacuum switch. In some embodiments of the present invention, a metal cover can be used in place of the trigger electrode on the substrate. Materials used for the vacuum switch are compatible with high vacuum, relatively high temperature processing. These materials include molybdenum, niobium, copper, tungsten, aluminum and alloys thereof for the anode and cathode. Carbon in the form of graphitic carbon, a diamond-like material, or carbon nanotubes can be used in the trigger electrode. Channels can be optionally formed in the substrate to mitigate against surface breakdown.

  16. MEMRISTIVE SWITCHING: PHYSICAL MECHANISMS AND APPLICATIONS. ...

    Office of Scientific and Technical Information (OSTI)

    Andrew ; Marinella, Matthew Publication Date: 2014-04-01 OSTI Identifier: 1141884 Report Number(s): SAND2014-2995J 507561 DOE Contract Number: DE-AC04-94AL85000 Resource Type:...

  17. Observational evidence of torus instability as trigger mechanism for coronal mass ejections: The 2011 August 4 filament eruption

    SciTech Connect (OSTI)

    Zuccarello, F. P.; Poedts, S.; Seaton, D. B.; Mierla, M.; Rachmeler, L. A.; Romano, P.; Zuccarello, F. E-mail: Stefaan.Poedts@wis.kuleuven.be E-mail: marilena@oma.be E-mail: Paolo.Romano@oact.inaf.it

    2014-04-20

    Solar filaments are magnetic structures often observed in the solar atmosphere and consist of plasma that is cooler and denser than their surroundings. They are visible for dayseven weekswhich suggests that they are often in equilibrium with their environment before disappearing or erupting. Several eruption models have been proposed that aim to reveal what mechanism causes (or triggers) these solar eruptions. Validating these models through observations represents a fundamental step in our understanding of solar eruptions. We present an analysis of the observation of a filament eruption that agrees with the torus instability model. This model predicts that a magnetic flux rope embedded in an ambient field undergoes an eruption when the axis of the flux rope reaches a critical height that depends on the topology of the ambient field. We use the two vantage points of the Solar Dynamics Observatory (SDO) and the Solar TErrestrial RElations Observatory to reconstruct the three-dimensional shape of the filament, to follow its morphological evolution, and to determine its height just before eruption. The magnetograms acquired by SDO/Helioseismic and Magnetic Imager are used to infer the topology of the ambient field and to derive the critical height for the onset of the torus instability. Our analysis shows that the torus instability is the trigger of the eruption. We also find that some pre-eruptive processes, such as magnetic reconnection during the observed flares and flux cancellation at the neutral line, facilitated the eruption by bringing the filament to a region where the magnetic field was more vulnerable to the torus instability.

  18. Switching power pulse system

    DOE Patents [OSTI]

    Aaland, Kristian

    1983-01-01

    A switching system for delivering pulses of power from a source (10) to a load (20) using a storage capacitor (C3) charged through a rectifier (D1, D2), and maintained charged to a reference voltage level by a transistor switch (Q1) and voltage comparator (12). A thyristor (22) is triggered to discharge the storage capacitor through a saturable reactor (18) and fractional turn saturable transformer (16) having a secondary to primary turn ratio N of n:l/n=n.sup.2. The saturable reactor (18) functions as a "soaker" while the thyristor reaches saturation, and then switches to a low impedance state. The saturable transformer functions as a switching transformer with high impedance while a load coupling capacitor (C4) charges, and then switches to a low impedance state to dump the charge of the storage capacitor (C3) into the load through the coupling capacitor (C4). The transformer is comprised of a multilayer core (26) having two secondary windings (28, 30) tightly wound and connected in parallel to add their output voltage and reduce output inductance, and a number of single turn windings connected in parallel at nodes (32, 34) for the primary winding, each single turn winding linking a different one of the layers of the multilayer core. The load may be comprised of a resistive beampipe (40) for a linear particle accelerator and capacitance of a pulse forming network (42). To hold off discharge of the capacitance until it is fully charged, a saturable core (44) is provided around the resistive beampipe (40) to isolate the beampipe from the capacitance (42) until it is fully charged.

  19. Transparent electrode for optical switch

    DOE Patents [OSTI]

    Goldhar, J.; Henesian, M.A.

    1984-10-19

    The invention relates generally to optical switches and techniques for applying a voltage to an electro-optical crystal, and more particularly, to transparent electodes for an optical switch. System architectures for very large inertial confinement fusion (ICF) lasers require active optical elements with apertures on the order of one meter. Large aperture optical switches are needed for isolation of stages, switch-out from regenerative amplifier cavities and protection from target retroreflections.

  20. Plasma opening switch

    DOE Patents [OSTI]

    Savage, Mark E. (Albuquerque, NM); Mendel, Jr., Clifford W. (Albuquerque, NM)

    2001-01-01

    A command triggered plasma opening switch assembly using an amplification stage. The assembly surrounds a coaxial transmission line and has a main plasma opening switch (POS) close to the load and a trigger POS upstream from the main POS. The trigger POS establishes two different current pathways through the assembly depended on whether it has received a trigger current pulse. The initial pathway has both POS's with plasma between their anodes and cathodes to form a short across the transmission line and isolating the load. The final current pathway is formed when the trigger POS receives a trigger current pulse which energizes its fast coil to push the conductive plasma out from between its anode and cathode, allowing the main transmission line current to pass to the fast coil of the main POS, thus pushing its plasma out the way so as to establish a direct current pathway to the load.

  1. CREE: Making the Switch

    SciTech Connect (OSTI)

    Grider, David; Palmer, John

    2014-03-06

    CREE, with the help of ARPA-E funding, has developed a Silicon Carbide (SIC) transistor which can be used to create solid state transformers capable of meeting the unique needs of the emerging smart grid. SIC transistors are different from common silicon computer chips in that they handle grid scale voltages with ease and their high frequency switching is well suited to the intermittent nature of renewable energy generation.

  2. switched-bed regenerators

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    switched-bed regenerators - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Fuel Cycle Defense Waste Management Programs

  3. CREE: Making the Switch

    ScienceCinema (OSTI)

    Grider, David; Palmer, John

    2014-04-09

    CREE, with the help of ARPA-E funding, has developed a Silicon Carbide (SIC) transistor which can be used to create solid state transformers capable of meeting the unique needs of the emerging smart grid. SIC transistors are different from common silicon computer chips in that they handle grid scale voltages with ease and their high frequency switching is well suited to the intermittent nature of renewable energy generation.

  4. Modeling Combustion Control for High Power Diesel Mode Switching |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Combustion Control for High Power Diesel Mode Switching Modeling Combustion Control for High Power Diesel Mode Switching Poster presentation given at the 16th Directions in Engine-Efficiency and Emissions Research (DEER) Conference in Detroit, MI, September 27-30, 2010. PDF icon p-20_banerjee.pdf More Documents & Publications Diesel Injection Shear-Stress Advanced Nozzle (DISSAN) In-Cylinder Mechanisms of PCI Heat-Release Rate Control by Fuel Reactivity

  5. Compound semiconductor optical waveguide switch

    DOE Patents [OSTI]

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  6. Sensor Switch's Bright Manufacturing Future

    Broader source: Energy.gov [DOE]

    The switch helps with cost effective energy savings by turning off the lights when an occupancy sensor says the room is empty.

  7. Switch LLC | Open Energy Information

    Open Energy Info (EERE)

    Maryland Zip: 20886 Sector: Solar Product: Installer and distributor of small-scale solar passive, PV, fuel cell, and other distributed energy systems. References: Switch...

  8. Data center coolant switch

    DOE Patents [OSTI]

    Iyengar, Madhusudan K.; Parida, Pritish R.; Schultz, Mark D.

    2015-10-06

    A data center cooling system is operated in a first mode; it has an indoor portion wherein heat is absorbed from components in the data center, and an outdoor heat exchanger portion wherein outside air is used to cool a first heat transfer fluid (e.g., water) present in at least the outdoor heat exchanger portion of the cooling system during the first mode. The first heat transfer fluid is a relatively high performance heat transfer fluid (as compared to the second fluid), and has a first heat transfer fluid freezing point. A determination is made that an appropriate time has been reached to switch from the first mode to a second mode. Based on this determination, the outdoor heat exchanger portion of the data cooling system is switched to a second heat transfer fluid, which is a relatively low performance heat transfer fluid, as compared to the first heat transfer fluid. It has a second heat transfer fluid freezing point lower than the first heat transfer fluid freezing point, and the second heat transfer fluid freezing point is sufficiently low to operate without freezing when the outdoor air temperature drops below a first predetermined relationship with the first heat transfer fluid freezing point.

  9. Advanced Soft Switching Inverter for Reducing Switching and Power Losses

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Advanced Soft Switching Inverter for Reducing Switching and Power Losses Jason Lai Virginia Polytechnic Institute and State University June 10, 2010 This presentation does not contain any proprietary, confidential, or otherwise restricted information Project ID: APE011 2 Outline * Overview * Objectives * Milestones * Approaches * Accomplishments * Future Work * Summary 3 Overview * Start - Sep 2007 * Finish - Sep 2010 * 75% Complete * Barriers addressed - Inverter Cost - Inverter Weight and

  10. Hybrid switch for resonant power converters

    DOE Patents [OSTI]

    Lai, Jih-Sheng; Yu, Wensong

    2014-09-09

    A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

  11. Battery switch for downhole tools

    DOE Patents [OSTI]

    Boling, Brian E. (Sugar Land, TX)

    2010-02-23

    An electrical circuit for a downhole tool may include a battery, a load electrically connected to the battery, and at least one switch electrically connected in series with the battery and to the load. The at least one switch may be configured to close when a tool temperature exceeds a selected temperature.

  12. ''Smart'' watchdog safety switch

    DOE Patents [OSTI]

    Kronberg, J.W.

    1991-10-01

    A method and apparatus for monitoring a process having a periodic output so that the process equipment is not damaged in the event of a controller failure, comprising a low-pass and peak clipping filter, an event detector that generates an event pulse for each valid change in magnitude of the filtered periodic output, a timing pulse generator, a counter that increments upon receipt of any timing pulse and resets to zero on receipt of any event pulse, an alarm that alerts when the count reaches some preselected total count, and a set of relays that opens to stop power to process equipment. An interface module can be added to allow the switch to accept a variety of periodic output signals. 21 figures.

  13. High voltage coaxial switch

    DOE Patents [OSTI]

    Rink, J.P.

    1983-07-19

    A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure. 3 figs.

  14. Optimized scalable network switch

    DOE Patents [OSTI]

    Blumrich, Matthias A. (Ridgefield, CT); Chen, Dong (Croton On Hudson, NY); Coteus, Paul W. (Yorktown Heights, NY); Gara, Alan G. (Mount Kisco, NY); Giampapa, Mark E. (Irvington, NY); Heidelberger, Philip (Cortlandt Manor, NY); Steinmacher-Burow, Burkhard D. (Mount Kisco, NY); Takken, Todd E. (Mount Kisco, NY); Vranas, Pavlos M. (Bedford Hills, NY)

    2007-12-04

    In a massively parallel computing system having a plurality of nodes configured in m multi-dimensions, each node including a computing device, a method for routing packets towards their destination nodes is provided which includes generating at least one of a 2m plurality of compact bit vectors containing information derived from downstream nodes. A multilevel arbitration process in which downstream information stored in the compact vectors, such as link status information and fullness of downstream buffers, is used to determine a preferred direction and virtual channel for packet transmission. Preferred direction ranges are encoded and virtual channels are selected by examining the plurality of compact bit vectors. This dynamic routing method eliminates the necessity of routing tables, thus enhancing scalability of the switch.

  15. "Smart" watchdog safety switch

    DOE Patents [OSTI]

    Kronberg, James W. (353 Church Rd., Beech Island, SC 29842)

    1991-01-01

    A method and apparatus for monitoring a process having a periodic output so that the process equipment is not damaged in the event of a controller failure, comprising a low-pass and peak clipping filter, an event detector that generates an event pulse for each valid change in magnitude of the filtered periodic output, a timing pulse generator, a counter that increments upon receipt of any timing pulse and resets to zero on receipt of any event pulse, an alarm that alerts when the count reaches some preselected total count, and a set of relays that opens to stop power to process equipment. An interface module can be added to allow the switch to accept a variety of periodic output signals.

  16. Optimized scalable network switch

    DOE Patents [OSTI]

    Blumrich, Matthias A. (Ridgefield, CT); Chen, Dong (Croton on Hudson, NY); Coteus, Paul W. (Yorktown Heights, NY)

    2010-02-23

    In a massively parallel computing system having a plurality of nodes configured in m multi-dimensions, each node including a computing device, a method for routing packets towards their destination nodes is provided which includes generating at least one of a 2m plurality of compact bit vectors containing information derived from downstream nodes. A multilevel arbitration process in which downstream information stored in the compact vectors, such as link status information and fullness of downstream buffers, is used to determine a preferred direction and virtual channel for packet transmission. Preferred direction ranges are encoded and virtual channels are selected by examining the plurality of compact bit vectors. This dynamic routing method eliminates the necessity of routing tables, thus enhancing scalability of the switch.

  17. High voltage coaxial switch

    DOE Patents [OSTI]

    Rink, John P. (Los Alamos, NM)

    1983-07-19

    A coaxial high voltage, high current switch having a solid cylindrical cold cathode coaxially surrounded by a thin hollow cylindrical inner electrode and a larger hollow cylindrical outer electrode. A high voltage trigger between the cathode and the inner electrode causes electrons to be emitted from the cathode and flow to the inner electrode preferably through a vacuum. Some of the electrons penetrate the inner electrode and cause a volumetric discharge in the gas (which may be merely air) between the inner and outer electrodes. The discharge provides a low impedance path between a high voltage charge placed on the outer electrode and a load (which may be a high power laser) coupled to the inner electrode. For high repetition rate the gas between the inner and outer electrodes may be continuously exchanged or refreshed under pressure.

  18. Soft Switching Technologies | Open Energy Information

    Open Energy Info (EERE)

    Soft Switching Technologies Jump to: navigation, search Name: Soft Switching Technologies Place: Wisconsin Product: Supplier of power quality solutions for delivery of highly...

  19. Emerging Resistive Switching Memory Technologies: Overview and...

    Office of Scientific and Technical Information (OSTI)

    Emerging Resistive Switching Memory Technologies: Overview and Current Status. Citation Details In-Document Search Title: Emerging Resistive Switching Memory Technologies: Overview ...

  20. Dielectric liquid pulsed-power switch

    DOE Patents [OSTI]

    Christophorou, Loucas G. (Oak Ridge, TN); Faidas, Homer (Knoxville, TN)

    1990-01-01

    This disclosure identifies dielectric liquids for use as opening and closing switching media in pulsed power technology, and describes a dielectric-liquid-pulsed-power switch empolying flashlamps.

  1. Alarm toe switch. [Patent application

    DOE Patents [OSTI]

    Ganyard, F.P.

    1980-11-18

    An alarm toe switch inserted within a shoe for energizing an alarm circuit in a covert manner includes an insole mounting pad into which a miniature reed switch is fixedly molded. An elongated slot perpendicular to the reed switch is formed in the bottom surface of the mounting pad. A permanent cylindrical magnet positioned in the forward portion of the slot with a diameter greater than the pad thickness causes a bump above the pad. A foam rubber block is also positioned in the slot rearwardly of the magnet and holds the magnet in normal inoperative relation. A non-magnetic support plate covers the slot and holds the magnet and foam rubber in the slot. The plate minimizes bending and frictional forces to improve movement of the magnet for reliable switch activation. The bump occupies the knuckle space beneath the big toe. When the big toe is scrunched rearwardly the magnet is moved within the slot relative to the reed switch, thus magnetically activating the switch. When toe pressure is released the foam rubber block forces the magnet back into normal inoperative position to deactivate the reed switch.

  2. Regenerative switching CMOS system

    DOE Patents [OSTI]

    Welch, J.D.

    1998-06-02

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a series combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electrically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided. 14 figs.

  3. Regenerative switching CMOS system

    DOE Patents [OSTI]

    Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124)

    1998-01-01

    Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.

  4. Low impedance switch

    DOE Patents [OSTI]

    Hornig, Donald F.

    1976-01-01

    1. A low inductance switch comprising a pair of spaced apart, annularly shaped, plate members of conducting material supported in substantially parallel, insulated relationship, said plate members being provided with a plurality of radially extending, spoke-like extensions whereby said members may be connected into a plurality of electrical circuits, and an electrical discharge means connected across said spaced plate members for effecting the simultaneous closing of the electrical circuits connected thereto, said electrical discharge means including an elongated, sealed envelope which contains an ionizable gas and which is supported on one of said plate members with the major axis of said envelope extending generally perpendicular to the plane of said plate members, a pair of elongated, spaced apart, insulated electrodes supported within said envelope and extending axially thereof, one of said electrodes being connected to each of said plate members, and a third, firing or trigger electrode supported within said envelope intermediate said main electrodes and being insulated from said main electrodes.

  5. Wide Bandgap Extrinsic Photoconductive Switches

    SciTech Connect (OSTI)

    Sullivan, J S

    2012-01-17

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  6. High PRF high current switch

    DOE Patents [OSTI]

    Moran, Stuart L. (Fredericksburg, VA); Hutcherson, R. Kenneth (College Park, MD)

    1990-03-27

    A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

  7. Electronic logic for enhanced switch reliability

    DOE Patents [OSTI]

    Cooper, J.A.

    1984-01-20

    A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and fail-safe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

  8. Optical Switch Using Risley Prisms

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Christenson, Todd R. (Albuquerque, NM)

    2005-02-22

    An optical switch using Risley prisms and rotary microactuators to independently rotate the wedge prisms of each Risley prism pair is disclosed. The optical switch comprises an array of input Risley prism pairs that selectively redirect light beams from a plurality of input ports to an array of output Risley prism pairs that similarly direct the light beams to a plurality of output ports. Each wedge prism of each Risley prism pair can be independently rotated by a variable-reluctance stepping rotary microactuator that is fabricated by a multi-layer LIGA process. Each wedge prism can be formed integral to the annular rotor of the rotary microactuator by a DXRL process.

  9. Optical switch using Risley prisms

    DOE Patents [OSTI]

    Sweatt, William C. (Albuquerque, NM); Christenson, Todd R. (Albuquerque, NM)

    2003-04-15

    An optical switch using Risley prisms and rotary microactuators to independently rotate the wedge prisms of each Risley prism pair is disclosed. The optical switch comprises an array of input Risley prism pairs that selectively redirect light beams from a plurality of input ports to an array of output Risley prism pairs that similarly direct the light beams to a plurality of output ports. Each wedge prism of each Risley prism pair can be independently rotated by a variable-reluctance stepping rotary microactuator that is fabricated by a multi-layer LIGA process. Each wedge prism can be formed integral to the annular rotor of the rotary microactuator by a DXRL process.

  10. High voltage MOSFET switching circuit

    DOE Patents [OSTI]

    McEwan, T.E.

    1994-07-26

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

  11. High voltage MOSFET switching circuit

    DOE Patents [OSTI]

    McEwan, Thomas E. (Livermore, CA)

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  12. Anode initiated surface flashover switch

    DOE Patents [OSTI]

    Brainard, John P. (Albuquerque, NM); Koss, Robert J. (Albuquerque, NM)

    2003-04-29

    A high voltage surface flashover switch has a pair of electrodes spaced by an insulator. A high voltage is applied to an anode, which is smaller than the opposing, grounded, cathode. When a controllable source of electrons near the cathode is energized, the electrons are attracted to the anode where they reflect to the insulator and initiate anode to cathode breakdown.

  13. Spark gap switch with spiral gas flow

    DOE Patents [OSTI]

    Brucker, John P. (Espanola, NM)

    1989-01-01

    A spark gap switch having a contaminate removal system using an injected gas. An annular plate concentric with an electrode of the switch defines flow paths for the injected gas which form a strong spiral flow of the gas in the housing which is effective to remove contaminates from the switch surfaces. The gas along with the contaminates is exhausted from the housing through one of the ends of the switch.

  14. Dedication of Ethernet Switch | Department of Energy

    Office of Environmental Management (EM)

    Dedication of Ethernet Switch Dedication of Ethernet Switch A presentation of how Nuclear Logistics Inc. performed CGD on the RuggedCom Ethernet Switches. The presentation lays out the dedication process, methods, and standards used. Also included, are key issues and lessons learned. PDF icon Dedication of Ethernet Switch More Documents & Publications Commercial Grade Dedication Guidance QA Corporate Board Meeting - July 2011 (Teleconference) Lemnos Interoperable Security

  15. Switch for serial or parallel communication networks

    DOE Patents [OSTI]

    Crosette, Dario B. (DeSoto, TX)

    1994-01-01

    A communication switch apparatus and a method for use in a geographically extensive serial, parallel or hybrid communication network linking a multi-processor or parallel processing system has a very low software processing overhead in order to accommodate random burst of high density data. Associated with each processor is a communication switch. A data source and a data destination, a sensor suite or robot for example, may also be associated with a switch. The configuration of the switches in the network are coordinated through a master processor node and depends on the operational phase of the multi-processor network: data acquisition, data processing, and data exchange. The master processor node passes information on the state to be assumed by each switch to the processor node associated with the switch. The processor node then operates a series of multi-state switches internal to each communication switch. The communication switch does not parse and interpret communication protocol and message routing information. During a data acquisition phase, the communication switch couples sensors producing data to the processor node associated with the switch, to a downlink destination on the communications network, or to both. It also may couple an uplink data source to its processor node. During the data exchange phase, the switch couples its processor node or an uplink data source to a downlink destination (which may include a processor node or a robot), or couples an uplink source to its processor node and its processor node to a downlink destination.

  16. Switch for serial or parallel communication networks

    DOE Patents [OSTI]

    Crosette, D.B.

    1994-07-19

    A communication switch apparatus and a method for use in a geographically extensive serial, parallel or hybrid communication network linking a multi-processor or parallel processing system has a very low software processing overhead in order to accommodate random burst of high density data. Associated with each processor is a communication switch. A data source and a data destination, a sensor suite or robot for example, may also be associated with a switch. The configuration of the switches in the network are coordinated through a master processor node and depends on the operational phase of the multi-processor network: data acquisition, data processing, and data exchange. The master processor node passes information on the state to be assumed by each switch to the processor node associated with the switch. The processor node then operates a series of multi-state switches internal to each communication switch. The communication switch does not parse and interpret communication protocol and message routing information. During a data acquisition phase, the communication switch couples sensors producing data to the processor node associated with the switch, to a downlink destination on the communications network, or to both. It also may couple an uplink data source to its processor node. During the data exchange phase, the switch couples its processor node or an uplink data source to a downlink destination (which may include a processor node or a robot), or couples an uplink source to its processor node and its processor node to a downlink destination. 9 figs.

  17. Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches

    DOE Patents [OSTI]

    Cooper, James A. (Albuquerque, NM)

    1986-01-01

    A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

  18. Secure videoconferencing equipment switching system and method

    DOE Patents [OSTI]

    Hansen, Michael E. (Livermore, CA)

    2009-01-13

    A switching system and method are provided to facilitate use of videoconference facilities over a plurality of security levels. The system includes a switch coupled to a plurality of codecs and communication networks. Audio/Visual peripheral components are connected to the switch. The switch couples control and data signals between the Audio/Visual peripheral components and one but nor both of the plurality of codecs. The switch additionally couples communication networks of the appropriate security level to each of the codecs. In this manner, a videoconferencing facility is provided for use on both secure and non-secure networks.

  19. Switch for Good Community Program

    SciTech Connect (OSTI)

    Crawford, Tabitha; Amran, Martha

    2013-11-19

    Switch4Good is an energy-savings program that helps residents reduce consumption from behavior changes; it was co-developed by Balfour Beatty Military Housing Management (BB) and WattzOn in Phase I of this grant. The program was offered at 11 Navy bases. Three customer engagement strategies were evaluated, and it was found that Digital Nudges (a combination of monthly consumption statements with frequent messaging via text or email) was most cost-effective.

  20. Laser-triggered vacuum switch

    DOE Patents [OSTI]

    Brannon, P.J.; Cowgill, D.F.

    1990-12-18

    A laser-triggered vacuum switch has a material such as a alkali metal halide on the cathode electrode for thermally activated field emission of electrons and ions upon interaction with a laser beam, the material being in contact with the cathode with a surface facing the discharge gap. The material is preferably a mixture of KCl and Ti powders. The laser may either shine directly on the material, preferably through a hole in the anode, or be directed to the material over a fiber optic cable. 10 figs.

  1. Microwave-triggered laser switch

    DOE Patents [OSTI]

    Piltch, Martin S. (Los Alamos, NM)

    1984-01-01

    A high-repetition rate switch for delivering short duration, high-power electrical pulses from a pulsed-charged dc power supply. The present invention utilizes a microwave-generating device such as a magnetron that is capable of producing high-power pulses at high-pulse repetition rates and fast-pulse risetimes for long periods with high reliability. The rail-gap electrodes provide a large surface area that reduces induction effects and minimizes electrode erosion. Additionally, breakdown is initiated in a continuous geometric fashion that also increases operating lifetime of the device.

  2. Optical switching system and method

    DOE Patents [OSTI]

    Ranganathan, Radha (N. Tonawanda, NY); Gal, Michael (Engadine, AU); Taylor, P. Craig (Salt Lake City, UT)

    1992-01-01

    An optically bistable device is disclosed. The device includes a uniformly thick layer of amorphous silicon to constitute a Fabry-Perot chamber positioned to provide a target area for a probe beam. The probe beam has a maximum energy less than the energy band gap of the amorphous semiconductor. In a preferred embodiment, a multilayer dielectric mirror is positioned on the Fabry-Perot chamber to increase the finesse of switching of the device. The index of refraction of the amorphous material is thermally altered to alter the transmission of the probe beam.

  3. Multiprocessor switch with selective pairing

    DOE Patents [OSTI]

    Gara, Alan; Gschwind, Michael K; Salapura, Valentina

    2014-03-11

    System, method and computer program product for a multiprocessing system to offer selective pairing of processor cores for increased processing reliability. A selective pairing facility is provided that selectively connects, i.e., pairs, multiple microprocessor or processor cores to provide one highly reliable thread (or thread group). Each paired microprocessor or processor cores that provide one highly reliable thread for high-reliability connect with a system components such as a memory "nest" (or memory hierarchy), an optional system controller, and optional interrupt controller, optional I/O or peripheral devices, etc. The memory nest is attached to a selective pairing facility via a switch or a bus

  4. Microwave-triggered laser switch

    DOE Patents [OSTI]

    Piltch, M.S.

    1982-05-19

    A high-repetition rate switch is described for delivering short duration, high-powered electrical pulses from a pulsed-charged dc power supply. The present invention utilizes a microwave-generating device such as a magnetron that is capable of producing high-power pulses at high-pulse repetition rates and fast-pulse risetimes for long periods with high reliability. The rail-gap electrodes provide a large surface area that reduces induction effects and minimizes electrode erosion. Additionally, breakdown is initiated in a continuous geometric fashion that also increases operating lifetime of the device.

  5. Laser activated diffuse discharge switch

    DOE Patents [OSTI]

    Christophorou, Loucas G. (Oak Ridge, TN); Hunter, Scott R. (Oak Ridge, TN)

    1988-01-01

    The invention is a gas mixture for a diffuse discharge switch which is capable of changing from a conducting state to an insulating state in the presence of electrons upon the introduction of laser light. The mixture is composed of a buffer gas such as nitrogen or argon and an electron attaching gas such as C.sub.6 H.sub.5 SH, C.sub.6 H.sub.5 SCH.sub.3, CH.sub.3 CHO and CF.sub.3 CHO wherein the electron attachment is brought on by indirect excitation of molecules to long-lived states by exposure to laser light.

  6. Laser-triggered vacuum switch

    DOE Patents [OSTI]

    Brannon, Paul J. (Albuquerque, NM); Cowgill, Donald F. (Danville, CA)

    1990-01-01

    A laser-triggered vacuum switch has a material such as a alkali metal halide on the cathode electrode for thermally activated field emission of electrons and ions upon interaction with a laser beam, the material being in contact with the cathode with a surface facing the discharge gap. The material is preferably a mixture of KCl and Ti powders. The laser may either shine directly on the material, preferably through a hole in the anode, or be directed to the material over a fiber optic cable.

  7. Stable nonlinear Mach-Zehnder fiber switch

    DOE Patents [OSTI]

    Digonnet, Michel J. F. (Palo Alto, CA); Shaw, H. John (Palo Alto, CA); Pantell, Richard H. (Menlo Park, CA); Sadowski, Robert W. (Camp Doha, KW)

    1999-01-01

    An all-optical fiber switch is implemented within a short Mach-Zehnder interferometer configuration. The Mach-Zehnder switch is constructed to have a high temperature stability so as to minimize temperature gradients and other thermal effects which result in undesirable instability at the output of the switch. The Mach-Zehnder switch of the preferred embodiment is advantageously less than 2 cm in length between couplers to be sufficiently short to be thermally stable, and full switching is accomplished by heavily doping one or both of the arms between the couplers so as to provide a highly nonlinear region within one or both of the arms. A pump input source is used to affect the propagation characteristics of one of the arms to control the output coupling ratio of the switch. Because of the high nonlinearity of the pump input arm, low pump powers can be used, thereby alleviating difficulties and high cost associated with high pump input powers.

  8. Magnetic switch coupling to synchronize magnetic modulators

    DOE Patents [OSTI]

    Reed, Kim W. (Albuquerque, NM); Kiekel, Paul (Albuquerque, NM)

    1999-01-01

    Apparatus for synchronizing the output pulses from a pair of magnetic switches. An electrically conductive loop is provided between the pair of switches with the loop having windlings about the core of each of the magnetic switches. The magnetic coupling created by the loop removes voltage and timing variations between the outputs of the two magnetic switches caused by any of a variety of factors. The only remaining variation is a very small fixed timing offset caused by the geometry and length of the loop itself.

  9. Multi-megavolt low jitter multistage switch

    DOE Patents [OSTI]

    Humphreys, D.R.; Penn, K.J. Jr.

    1985-06-19

    It is one object of the present invention to provide a multistage switch capable of holding off numerous megavolts, until triggered, from a particle beam accelerator of the type used for inertial confinement fusion. The invention provides a multistage switch having low timing jitter and capable of producing multiple spark channels for spreading current over a wider area to reduce electrode damage and increase switch lifetime. The switch has fairly uniform electric fields and a short spark gap for laser triggering and is engineered to prevent insulator breakdowns.

  10. Magnetic switch coupling to synchronize magnetic modulators

    DOE Patents [OSTI]

    Reed, K.W.; Kiekel, P.

    1999-04-27

    Apparatus for synchronizing the output pulses from a pair of magnetic switches is disclosed. An electrically conductive loop is provided between the pair of switches with the loop having windings about the core of each of the magnetic switches. The magnetic coupling created by the loop removes voltage and timing variations between the outputs of the two magnetic switches caused by any of a variety of factors. The only remaining variation is a very small fixed timing offset caused by the geometry and length of the loop itself. 13 figs.

  11. Gas mixtures for spark gap closing switches

    DOE Patents [OSTI]

    Christophorou, Loucas G. (Oak Ridge, TN); McCorkle, Dennis L. (Knoxville, TN); Hunter, Scott R. (Oak Ridge, TN)

    1988-01-01

    Gas mixtures for use in spark gap closing switches comprised of fluorocarbons and low molecular weight, inert buffer gases. To this can be added a third gas having a low ionization potential relative to the buffer gas. The gas mixtures presented possess properties that optimized the efficiency spark gap closing switches.

  12. WAP Memorandum 011: Clarification on Fuel Switching

    Broader source: Energy.gov [DOE]

    As the WAP continually develops skilled and technically proficient program personnel at the state and local levels, the DOE has decided to revise its current policy related to fuel switching in eligible homes served by the Program. WAP Grantees are now provided two options regarding the decision-making process for fuel switching to occur, detailed in WAP Memo 011.

  13. Ames Lab 101: Ultrafast Magnetic Switching

    ScienceCinema (OSTI)

    Jigang Wang

    2013-06-05

    Ames Laboratory physicists have found a new way to switch magnetism that is at least 1000 times faster than currently used in magnetic memory technologies. Magnetic switching is used to encode information in hard drives, magnetic random access memory and other computing devices. The discovery potentially opens the door to terahertz and faster memory speeds.

  14. Gas mixtures for spark gap closing switches

    DOE Patents [OSTI]

    Christophorou, L.G.; McCorkle, D.L.; Hunter, S.R.

    1987-02-20

    Gas mixtures for use in spark gap closing switches comprised of fluorocarbons and low molecular weight, inert buffer gases. To this can be added a third gas having a low ionization potential relative to the buffer gas. The gas mixtures presented possess properties that optimized the efficiency spark gap closing switches. 6 figs.

  15. A Reconnection Switch to Trigger gamma-Ray Burst Jet Dissipation

    SciTech Connect (OSTI)

    McKinney, Jonathan C.; Uzdensky, Dmitri A.

    2012-03-14

    Prompt gamma-ray burst (GRB) emission requires some mechanism to dissipate an ultrarelativistic jet. Internal shocks or some form of electromagnetic dissipation are candidate mechanisms. Any mechanism needs to answer basic questions, such as what is the origin of variability, what radius does dissipation occur at, and how does efficient prompt emission occur. These mechanisms also need to be consistent with how ultrarelativistic jets form and stay baryon pure despite turbulence and electromagnetic reconnection near the compact object and despite stellar entrainment within the collapsar model. We use the latest magnetohydrodynamical models of ultrarelativistic jets to explore some of these questions in the context of electromagnetic dissipation due to the slow collisional and fast collisionless reconnection mechanisms, as often associated with Sweet-Parker and Petschek reconnection, respectively. For a highly magnetized ultrarelativistic jet and typical collapsar parameters, we find that significant electromagnetic dissipation may be avoided until it proceeds catastrophically near the jet photosphere at large radii (r {approx} 10{sup 13}-10{sup 14}cm), by which the jet obtains a high Lorentz factor ({gamma} {approx} 100-1000), has a luminosity of L{sub j} {approx} 10{sup 50}-10{sup 51} erg s{sup -1}, has observer variability timescales of order 1s (ranging from 0.001-10s), achieves {gamma}{theta}{sub j} {approx} 10-20 (for opening half-angle {theta}{sub j}) and so is able to produce jet breaks, and has comparable energy available for both prompt and afterglow emission. A range of model parameters are investigated and simplified scaling laws are derived. This reconnection switch mechanism allows for highly efficient conversion of electromagnetic energy into prompt emission and associates the observed prompt GRB pulse temporal structure with dissipation timescales of some number of reconnecting current sheets embedded in the jet. We hope this work helps motivate the development of self-consistent radiative compressible relativistic reconnection models.

  16. Transparent electrode for optical switch

    DOE Patents [OSTI]

    Goldhar, Julius (San Ramon, CA); Henesian, Mark A. (Livermore, CA)

    1986-01-01

    A low pressure gas electrode utilizing ionized gas in a glow discharge regime forms a transparent electrode for electro-optical switches. The transparent electrode comprises a low pressure gas region on both sides of the crystal. When the gas is ionized, e.g., by a glow discharge in the low pressure gas, the plasma formed is a good conductor. The gas electrode acts as a highly uniform conducting electrode. Since the plasma is transparent to a high energy laser beam passing through the crystal, the electrode is a transparent electrode. A crystal exposed from two sides to such a plasma can be charged up uniformly to any desired voltage. The plasma can be created either by the main high voltage pulser used to charge up the crystal or by auxiliary discharges or external sources of ionization. A typical configuration utilizes 10 torr argon in the discharge region adjacent to each crystal face.

  17. Seismic switch for strong motion measurement

    DOE Patents [OSTI]

    Harben, P.E.; Rodgers, P.W.; Ewert, D.W.

    1995-05-30

    A seismic switching device is described that has an input signal from an existing microseismic station seismometer and a signal from a strong motion measuring instrument. The seismic switch monitors the signal level of the strong motion instrument and passes the seismometer signal to the station data telemetry and recording systems. When the strong motion instrument signal level exceeds a user set threshold level, the seismometer signal is switched out and the strong motion signal is passed to the telemetry system. The amount of time the strong motion signal is passed before switching back to the seismometer signal is user controlled between 1 and 15 seconds. If the threshold level is exceeded during a switch time period, the length of time is extended from that instant by one user set time period. 11 figs.

  18. Seismic switch for strong motion measurement

    DOE Patents [OSTI]

    Harben, Philip E. (Oakley, CA); Rodgers, Peter W. (Santa Barbara, CA); Ewert, Daniel W. (Patterson, CA)

    1995-01-01

    A seismic switching device that has an input signal from an existing microseismic station seismometer and a signal from a strong motion measuring instrument. The seismic switch monitors the signal level of the strong motion instrument and passes the seismometer signal to the station data telemetry and recording systems. When the strong motion instrument signal level exceeds a user set threshold level, the seismometer signal is switched out and the strong motion signal is passed to the telemetry system. The amount of time the strong motion signal is passed before switching back to the seismometer signal is user controlled between 1 and 15 seconds. If the threshold level is exceeded during a switch time period, the length of time is extended from that instant by one user set time period.

  19. Resistive switching phenomena: A review of statistical physics...

    Office of Scientific and Technical Information (OSTI)

    Resistive switching phenomena: A review of statistical physics approaches Citation Details ... Title: Resistive switching phenomena: A review of statistical physics approaches Authors: ...

  20. Robust Diamond-Based RF Switch Yields Enhanced Communication...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Robust Diamond-Based RF Switch Yields Enhanced Communication Capabilities Technology available for licesning: A radio frequency (RF) microelectromechanical system (MEMS) switch...

  1. Sub-picosecond optical switching with a negative index metamaterial...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Sub-picosecond optical switching with a negative index metamaterial Citation Details In-Document Search Title: Sub-picosecond optical switching with a negative...

  2. Electrically Switched Cesium Ion Exchange

    SciTech Connect (OSTI)

    JPH Sukamto; ML Lilga; RK Orth

    1998-10-23

    This report discusses the results of work to develop Electrically Switched Ion Exchange (ESIX) for separations of ions from waste streams relevant to DOE site clean-up. ESIX combines ion exchange and electrochemistry to provide a selective, reversible method for radionuclide separation that lowers costs and minimizes secondary waste generation typically associated with conventional ion exchange. In the ESIX process, an electroactive ion exchange film is deposited onto. a high surface area electrode, and ion uptake and elution are controlled directly by modulating the potential of the film. As a result, the production of secondary waste is minimized, since the large volumes of solution associated with elution, wash, and regeneration cycles typical of standard ion exchange are not needed for the ESIX process. The document is presented in two parts: Part I, the Summary Report, discusses the objectives of the project, describes the ESIX concept and the approach taken, and summarizes the major results; Part II, the Technology Description, provides a technical description of the experimental procedures and in-depth discussions on modeling, case studies, and cost comparisons between ESIX and currently used technologies.

  3. Electric field-induced magnetic switching in Mn:ZnO film

    SciTech Connect (OSTI)

    Ren, S. X.; Sun, G. W.; Zhao, J.; Dong, J. Y.; Zhao, X.; Chen, W.; Wei, Y.; Ma, Z. C.

    2014-06-09

    A large magnetic modulation, accompanied by stable bipolar resistive switching (RS) behavior, was observed in a Mn:ZnO film by applying a reversible electric field. A significant enhancement of the ferromagnetism of the film, to about five times larger than that in the initial (as-grown) state (IS), was obtained by switching the film into the low resistance state. X-ray photoelectron spectroscopy demonstrated the existence of abundant oxygen vacancies in the IS of the film. We suggest that this electric field-induced magnetic switching effect originates with the migration and redistribution of oxygen vacancies during RS. Our work indicates that electric switching is an effective and simple method to increase the ferromagnetism of diluted magnetic oxide films. This provides a promising direction for research in spintronic devices.

  4. Shift in the Equilibrium between On and Off States of the Allosteric Switch in Ras-GppNHp Affected by Small Molecules and Bulk Solvent Composition

    SciTech Connect (OSTI)

    Holzapfel, Genevieve; Buhrman, Greg; Mattos, Carla

    2012-08-31

    Ras GTPase cycles between its active GTP-bound form promoted by GEFs and its inactive GDP-bound form promoted by GAPs to affect the control of various cellular functions. It is becoming increasingly apparent that subtle regulation of the GTP-bound active state may occur through promotion of substates mediated by an allosteric switch mechanism that induces a disorder to order transition in switch II upon ligand binding at an allosteric site. We show with high-resolution structures that calcium acetate and either dithioerythritol (DTE) or dithiothreitol (DTT) soaked into H-Ras-GppNHp crystals in the presence of a moderate amount of poly(ethylene glycol) (PEG) can selectively shift the equilibrium to the 'on' state, where the active site appears to be poised for catalysis (calcium acetate), or to what we call the 'ordered off' state, which is associated with an anticatalytic conformation (DTE or DTT). We also show that the equilibrium is reversible in our crystals and dependent on the nature of the small molecule present. Calcium acetate binding in the allosteric site stabilizes the conformation observed in the H-Ras-GppNHp/NOR1A complex, and PEG, DTE, and DTT stabilize the anticatalytic conformation observed in the complex between the Ras homologue Ran and Importin-{beta}. The small molecules are therefore selecting biologically relevant conformations in the crystal that are sampled by the disordered switch II in the uncomplexed GTP-bound form of H-Ras. In the presence of a large amount of PEG, the ordered off conformation predominates, whereas in solution, in the absence of PEG, switch regions appear to remain disordered in what we call the off state, unable to bind DTE.

  5. Mercury switch with non-wettable electrodes

    DOE Patents [OSTI]

    Karnowsky, Maurice M. (Albulquerque, NM); Yost, Frederick G. (Carlsbad, NM)

    1987-01-01

    A mercury switch device comprising a pool of mercury and a plurality of electrical contacts made of or coated with a non-wettable material such as titanium diboride.

  6. Script for Monitoring Infiniband Switch Links

    Energy Science and Technology Software Center (OSTI)

    2015-09-08

    This script ingests a configuration file and parses it to determine an Infiniband network topology, specifically the port information for switches. It then loops over the fabric to determine which, if any, ports do not meet their desired configuration.

  7. Single Molecule Switches and Molecular Self-Assembly: Low Temperature STM Investigations and Manipulations

    SciTech Connect (OSTI)

    Iancu, Violeta

    2006-08-01

    This dissertation is devoted to single molecule investigations and manipulations of two porphyrin-based molecules, chlorophyll-a and Co-popphyrin. The molecules are absorbed on metallic substrates and studied at low temperatures using a scanning tunneling microscope. The electronic, structural and mechanical properties of the molecules are investigated in detail with atomic level precision. Chlorophyll-a is the key ingredient in photosynthesis processes while Co-porphyrin is a magnetic molecule that represents the recent emerging field of molecular spintronics. Using the scanning tunneling microscope tip and the substrate as electrodes, and the molecules as active ingredients, single molecule switches made of these two molecules are demonstrated. The first switch, a multiple and reversible mechanical switch, is realized by using chlorophyll-a where the energy transfer of a single tunneling electron is used to rotate a C-C bond of the molecule's tail on a Au(111) surface. Here, the det

  8. Alternative Fuels Data Center: Colonial Williamsburg Switches to

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Alternative Transportation Colonial Williamsburg Switches to Alternative Transportation to someone by E-mail Share Alternative Fuels Data Center: Colonial Williamsburg Switches to Alternative Transportation on Facebook Tweet about Alternative Fuels Data Center: Colonial Williamsburg Switches to Alternative Transportation on Twitter Bookmark Alternative Fuels Data Center: Colonial Williamsburg Switches to Alternative Transportation on Google Bookmark Alternative Fuels Data Center: Colonial

  9. Compact high voltage solid state switch

    DOE Patents [OSTI]

    Glidden, Steven C.

    2003-09-23

    A compact, solid state, high voltage switch capable of high conduction current with a high rate of current risetime (high di/dt) that can be used to replace thyratrons in existing and new applications. The switch has multiple thyristors packaged in a single enclosure. Each thyristor has its own gate drive circuit that circuit obtains its energy from the energy that is being switched in the main circuit. The gate drives are triggered with a low voltage, low current pulse isolated by a small inexpensive transformer. The gate circuits can also be triggered with an optical signal, eliminating the trigger transformer altogether. This approach makes it easier to connect many thyristors in series to obtain the hold off voltages of greater than 80 kV.

  10. Magnetic switch for reactor control rod

    DOE Patents [OSTI]

    Germer, John H. (San Jose, CA)

    1986-01-01

    A magnetic reed switch assembly for activating an electromagnetic grapple utilized to hold a control rod in position above a reactor core. In normal operation the magnetic field of a permanent magnet is short-circuited by a magnetic shunt, diverting the magnetic field away from the reed switch. The magnetic shunt is made of a material having a Curie-point at the desired release temperature. Above that temperature the material loses its ferromagnetic properties, and the magnetic path is diverted to the reed switch which closes and short-circuits the control circuit for the control rod electromagnetic grapple which allows the control rod to drop into the reactor core for controlling the reactivity of the core.

  11. Nanoeletromechanical switch and logic circuits formed therefrom

    DOE Patents [OSTI]

    Nordquist, Christopher D. (Albuquerque, NM); Czaplewski, David A. (Albuquerque, NM)

    2010-05-18

    A nanoelectromechanical (NEM) switch is formed on a substrate with a source electrode containing a suspended electrically-conductive beam which is anchored to the substrate at each end. This beam, which can be formed of ruthenium, bows laterally in response to a voltage applied between a pair of gate electrodes and the source electrode to form an electrical connection between the source electrode and a drain electrode located near a midpoint of the beam. Another pair of gate electrodes and another drain electrode can be located on an opposite side of the beam to allow for switching in an opposite direction. The NEM switch can be used to form digital logic circuits including NAND gates, NOR gates, programmable logic gates, and SRAM and DRAM memory cells which can be used in place of conventional CMOS circuits, or in combination therewith.

  12. Magnetic switch for reactor control rod. [LMFBR

    DOE Patents [OSTI]

    Germer, J.H.

    1982-09-30

    A magnetic reed switch assembly is described for activating an electromagnetic grapple utilized to hold a control rod in position above a reactor core. In normal operation the magnetic field of a permanent magnet is short-circuited by a magnetic shunt, diverting the magnetic field away from the reed switch. The magnetic shunt is made of a material having a Curie-point at the desired release temperature. Above that temperature the material loses its ferromagnetic properties, and the magnetic path is diverted to the reed switch which closes and short-circuits the control circuit for the control rod electro-magnetic grapple which allows the control rod to drop into the reactor core for controlling the reactivity of the core.

  13. Manufacturing fuel-switching capability, 1988

    SciTech Connect (OSTI)

    Not Available

    1991-09-01

    Historically, about one-third of all energy consumed in the United States has been used by manufacturers. About one-quarter of manufacturing energy is used as feedstocks and raw material inputs that are converted into nonenergy products; the remainder is used for its energy content. During 1988, the most recent year for which data are available, manufacturers consumed 15.5 quadrillion British thermal units (Btu) of energy to produce heat and power and to generate electricity. The manufacturing sector also has widespread capabilities to switch from one fuel to another for either economic or emergency reasons. There are numerous ways to define fuel switching. For the purposes of the Manufacturing Energy Consumption Survey (MECS), fuel switching is defined as the capability to substitute one energy source for another within 30 days with no significant modifications to the fuel-consuming equipment, while keeping production constant. Fuel-switching capability allows manufacturers substantial flexibility in choosing their mix of energy sources. The consumption of a given energy source can be maximized if all possible switching into that energy source takes place. The estimates in this report are based on data collected on the 1988 Manufacturing Energy Consumption Survey (MECS), Forms 846 (A through C). The EIA conducts this national sample survey of manufacturing energy consumption on a triennial basis. The MECS is the only comprehensive source of national-level data on energy-related information for the manufacturing industries. The MECS was first conducted in 1986 to collect data for 1985. This report presents information on the fuel-switching capabilities of manufacturers in 1988. This report is the second of a series based on the 1988 MECS. 8 figs., 31 tabs.

  14. Explosive-driven, high speed, arcless switch

    DOE Patents [OSTI]

    Skogmo, P.J.; Tucker, T.J.

    1987-07-14

    An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed. 7 figs.

  15. Explosive-driven, high speed, arcless switch

    DOE Patents [OSTI]

    Skogmo, Phillip J. (Albuquerque, NM); Tucker, Tillman J. (Albuquerque, NM)

    1987-01-01

    An explosive-actuated, fast-acting arcless switch contains a highly conductive foil to carry high currents positioned adjacent a dielectric surface within a casing. At one side of the foil opposite the dielectric surface is an explosive which, when detonated, drives the conductive foil against the dielectric surface. A pattern of grooves in the dielectric surface ruptures the foil to establish a rupture path having a pattern corresponding to the pattern of the grooves. The impedance of the ruptured foil is greater than that of the original foil to divert high current to a load. Planar and cylindrical embodiments of the switch are disclosed.

  16. Optically triggered high voltage switch network and method for switching a high voltage

    DOE Patents [OSTI]

    El-Sharkawi, Mohamed A. (Renton, WA); Andexler, George (Everett, WA); Silberkleit, Lee I. (Mountlake Terrace, WA)

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  17. Resistive switching and threshold switching behaviors in La{sub 0.1}Bi{sub 0.9}Fe{sub 1-x}Co{sub x}O{sub 3} ceramics

    SciTech Connect (OSTI)

    Wang, S. Y.; Qiu, Xue; Feng, Yu; Hou, X. G.; Yu, D. S.; Li, D. J.; Liu, W. F.; Gao, J.

    2012-08-01

    The effects of cobalt doping on the electrical conductivity of La{sub 0.1}Bi{sub 0.9}Fe{sub 1-x}Co{sub x}O{sub 3} (LBFCO, x = 0, 0.01, 0.03) ceramics were investigated. It is found that the leakage current increases with cobalt dopant concentration in LBFCO. On the application of bias voltage LBFCO ceramics with cobalt doping exhibits resistive switching effects at room temperature and threshold switching effects at elevated temperatures (50 Degree-Sign C and 80 Degree-Sign C). X-ray photoelectron spectroscopy of LBFCO ceramics show that cobalt dopant is bivalent as an acceptor, which induces an enhancement of oxygen vacancy concentration in LBFCO ceramics. Possible mechanisms for both resistive switching and threshold switching effects are discussed on the basis of the interplay of bound ferroelectric charges and mobile charged defects.

  18. Fundamental science investigations to develop a 6-MV laser triggered gas switch for ZR: first annual report.

    SciTech Connect (OSTI)

    Warne, Larry Kevin; Van Den Avyle, James A.; Lehr, Jane Marie; Rose, David; Krompholz, Hermann G.; Vela, Russell; Jorgenson, Roy Eberhardt; Timoshkin, Igor (University of Strathclyde, Glasgow, Scotland); Woodworth, Joseph Ray; Prestwich, Kenneth Randel (Voss Scientific, Albuquerque, NM); Krile, John; Given, Martin (University of Strathclyde, Glasgow, Scotland); McKee, G. Randall; Rosenthal, Stephen Edgar; Struve, Kenneth William; Welch, Dale Robert (Voss Scientific, Albuquerque, NM); Benwell, Andrew L. (University of Missouri-Columbia, Columbia, Missouri); Kovaleski, Scott; LeChien, Keith, R.; Johnson, David (Titan Pulse Sciences Division); Fouracre, R.A. (University of Strathclyde, Glasgow, Scotland); Yeckel, Chris (University of Missouri-Columbia, Columbia, Missouri); Wakeland, Peter Eric; Miller, A. R. (Titan Pulse Sciences Division); Hodge, Keith Conquest (Ktech Corporation, Albuquerque, NM); Pasik, Michael Francis; Savage, Mark Edward; Maenchen, John Eric; Curry, Randy D.; Feltz, Greg; Bliss, David Emery; MacGregor, Scott (University of Strathclyde, Glasgow, Scotland); Corley, J. P. (Ktech Corporation, Albuquerque, NM); Anaya, Victor (Ktech Corporation, Albuquerque, NM); Wallace, Zachariah (Ktech Corporation, Albuquerque, NM); Thoma, Carsten (Voss Scientific, Albuquerque, NM); Neuber, Andreas. (Texas Tech University, Lubbock, TX)

    2007-03-01

    In October 2005, an intensive three-year Laser Triggered Gas Switch (LTGS) development program was initiated to investigate and solve observed performance and reliability issues with the LTGS for ZR. The approach taken has been one of mission-focused research: to revisit and reassess the design, to establish a fundamental understanding of LTGS operation and failure modes, and to test evolving operational hypotheses. This effort is aimed toward deploying an initial switch for ZR in 2007, on supporting rolling upgrades to ZR as the technology can be developed, and to prepare with scientific understanding for the even higher voltage switches anticipated needed for future high-yield accelerators. The ZR LTGS was identified as a potential area of concern quite early, but since initial assessments performed on a simplified Switch Test Bed (STB) at 5 MV showed 300-shot lifetimes on multiple switch builds, this component was judged acceptable. When the Z{sub 20} engineering module was brought online in October 2003 frequent flashovers of the plastic switch envelope were observed at the increased stresses required to compensate for the programmatically increased ZR load inductance. As of October 2006, there have been 1423 Z{sub 20} shots assessing a variety of LTGS designs. Numerous incremental and fundamental switch design modifications have been investigated. As we continue to investigate the LTGS, the basic science of plastic surface tracking, laser triggering, cascade breakdown, and optics degradation remain high-priority mission-focused research topics. Significant progress has been made and, while the switch does not yet achieve design requirements, we are on the path to develop successively better switches for rolling upgrade improvements to ZR. This report summarizes the work performed in FY 2006 by the large team. A high-level summary is followed by detailed individual topical reports.

  19. Optically initiated silicon carbide high voltage switch

    DOE Patents [OSTI]

    Caporaso, George J. (Livermore, CA); Sampayan, Stephen E. (Manteca, CA); Sullivan, James S. (Livermore, CA); Sanders; David M. (Livermore, CA)

    2011-02-22

    An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

  20. Isolated and soft-switched power converter

    DOE Patents [OSTI]

    Peng, Fang Zheng (Knoxville, TN); Adams, Donald Joe (Knoxville, TN)

    2002-01-01

    An isolated and soft-switched power converter is used for DC/DC and DC/DC/AC power conversion. The power converter includes two resonant tank circuits coupled back-to-back through an isolation transformer. Each resonant tank circuit includes a pair of resonant capacitors connected in series as a resonant leg, a pair of tank capacitors connected in series as a tank leg, and a pair of switching devices with anti-parallel clamping diodes coupled in series as resonant switches and clamping devices for the resonant leg. The power converter is well suited for DC/DC and DC/DC/AC power conversion applications in which high-voltage isolation, DC to DC voltage boost, bidirectional power flow, and a minimal number of conventional switching components are important design objectives. For example, the power converter is especially well suited to electric vehicle applications and load-side electric generation and storage systems, and other applications in which these objectives are important. The power converter may be used for many different applications, including electric vehicles, hybrid combustion/electric vehicles, fuel-cell powered vehicles with low-voltage starting, remote power sources utilizing low-voltage DC power sources, such as photovoltaics and others, electric power backup systems, and load-side electric storage and generation systems.

  1. Q-Switched Raman laser system

    DOE Patents [OSTI]

    George, E. Victor (Livermore, CA)

    1985-01-01

    Method and apparatus for use of a Raman or Brillouin switch together with a conventional laser and a saturable absorber that is rapidly bleached at a predetermined frequency .nu.=.nu..sub.0, to ultimately produce a Raman or Brillouin pulse at frequency .nu.=.nu..sub.0 .+-..nu..sub.Stokes.

  2. Interconnecting network for switching data packets and method for switching data packets

    DOE Patents [OSTI]

    Benner, Alan Frederic; Minkenberg, Cyriel Johan Agnes; Stunkel, Craig Brian

    2010-05-25

    The interconnecting network for switching data packets, having data and flow control information, comprises a local packet switch element (S1) with local input buffers (I(1,1) . . . I(1,y)) for buffering the incoming data packets, a remote packet switch element (S2) with remote input buffers (I(2,1) . . . I(2,y)) for buffering the incoming data packets, and data lines (L) for interconnecting the local and the remote packet switch elements (S1, S2). The interconnecting network further comprises a local and a remote arbiter (A1, A2) which are connected via control lines (CL) to the input buffers (I(1,1) . . . I(1,y), I(2,1) . . . I(2,y)), and which are formed such that they can provide that the flow control information is transmitted via the data lines (L) and the control lines (CL).

  3. In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching

    SciTech Connect (OSTI)

    Fujii, Takashi; Arita, Masashi; Takahashi, Yasuo; Fujiwara, Ichiro

    2011-05-23

    An in situ transmission electron microscopy (TEM) analysis of a solid electrolyte, Cu-GeS, during resistance switching is reported. Real-time observations of the filament formation and disappearance process were performed in the TEM instrument and the conductive-filament-formation model was confirmed experimentally. Narrow conductive filaments were formed corresponding to resistance switching from high- to low-resistance states. When the resistance changed to high-resistance state, the filament disappeared. It was also confirmed by use of selected area diffractometry and energy-dispersive x-ray spectroscopy that the conductive filament was made of nanocrystals composed mainly of Cu.

  4. Nanomechanical switch for integration with CMOS logic. (Journal...

    Office of Scientific and Technical Information (OSTI)

    United States Language: English Subject: 42 ENGINEERING; 77 NANOSCIENCE AND NANOTECHNOLOGY; FABRICATION; PERFORMANCE; SWITCHES; TESTING; NANOSTRUCTURES; DESIGN Word Cloud...

  5. Fast Superconducting Switch for Superconducting Power Devices - Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation Portal Fast Superconducting Switch for Superconducting Power Devices Brookhaven National Laboratory Contact BNL About This Technology Publications: PDF Document Publication Fast high-temperature superconductor switch for high current applications. (1,424 KB) Conceptual drawing of the fast superconducting switch.<br type="_moz" /> Conceptual drawing of the fast superconducting switch. Technology Marketing Summary Superconducting magnetic energy storage (SMES) offers

  6. A New Class of Switched Reluctance Motors | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Motors A New Class of Switched Reluctance Motors 2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C. PDF icon apep_02_burress.pdf More Documents & Publications A New Class of Switched Reluctance Motors without Permanent Magnets A New Class of Switched Reluctance Motors without Permanent Magnets

  7. RF-MEMS capacitive switches with high reliability

    DOE Patents [OSTI]

    Goldsmith, Charles L.; Auciello, Orlando H.; Carlisle, John A.; Sampath, Suresh; Sumant, Anirudha V.; Carpick, Robert W.; Hwang, James; Mancini, Derrick C.; Gudeman, Chris

    2013-09-03

    A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

  8. Filament formation and erasure in molybdenum oxide during resistive switching cycles

    SciTech Connect (OSTI)

    Kudo, Masaki; Arita, Masashi Ohno, Yuuki; Takahashi, Yasuo

    2014-10-27

    In-situ filament observations were carried out on the Cu/MoO{sub x}/TiN resistive random access memory (ReRAM) by using transmission electron microscopy. Multiple positive and negative I-V cycles were investigated. Clear set-reset bipolar switch corresponding to the characteristics of conventional ReRAM devices was recognized. Filament grew from TiN to Cu in the set cycle and shrank from TiN to Cu in the reset cycle. However, there was no clear contrast change in the image at the switching moment, and thus, switching is thought to occur in a local region of the filament. When the current was large at reset, the filament shrank much, and its position tended to change.

  9. Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility

    SciTech Connect (OSTI)

    Hong, Seok Man; Kim, Hee-Dong; An, Ho-Myoung; Kim, Tae Geun

    2013-12-15

    Graphical abstract: - Highlights: The resistive switching characteristics of WN{sub x} thin films. Excellent CMOS compatibility WN{sub x} films as a resistive switching material. Resistive switching mechanism revealed trap-controlled space charge limited conduction. Good endurance and retention properties over 10{sup 5} cycles, and 10{sup 5} s, respectively - Abstract: We report the resistive switching (RS) characteristics of tungsten nitride (WN{sub x}) thin films with excellent complementary metal-oxide-semiconductor (CMOS) compatibility. A Ti/WN{sub x}/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately 2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WN{sub x} films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >10{sup 5} cycles and a long retention time of >10{sup 5} s.

  10. Dynamics of Percolative Breakdown Mechanism in Tantalum Oxide ReRAM

    Office of Scientific and Technical Information (OSTI)

    Switching. (Journal Article) | SciTech Connect Dynamics of Percolative Breakdown Mechanism in Tantalum Oxide ReRAM Switching. Citation Details In-Document Search Title: Dynamics of Percolative Breakdown Mechanism in Tantalum Oxide ReRAM Switching. Abstract not provided. Authors: Lohn, Andrew ; Mickel, Patrick R. ; Marinella, Matthew Publication Date: 2013-06-01 OSTI Identifier: 1111385 Report Number(s): SAND2013-5134J 456566 DOE Contract Number: AC04-94AL85000 Resource Type: Journal Article

  11. Float level switch for a nuclear power plant containment vessel

    DOE Patents [OSTI]

    Powell, J.G.

    1993-11-16

    This invention is a float level switch used to sense rise or drop in water level in a containment vessel of a nuclear power plant during a loss of coolant accident. The essential components of the device are a guide tube, a reed switch inside the guide tube, a float containing a magnetic portion that activates a reed switch, and metal-sheathed, ceramic-insulated conductors connecting the reed switch to a monitoring system outside the containment vessel. Special materials and special sealing techniques prevent failure of components and allow the float level switch to be connected to a monitoring system outside the containment vessel. 1 figures.

  12. Float level switch for a nuclear power plant containment vessel

    DOE Patents [OSTI]

    Powell, James G. (Clifton Park, NY)

    1993-01-01

    This invention is a float level switch used to sense rise or drop in water level in a containment vessel of a nuclear power plant during a loss of coolant accident. The essential components of the device are a guide tube, a reed switch inside the guide tube, a float containing a magnetic portion that activates a reed switch, and metal-sheathed, ceramic-insulated conductors connecting the reed switch to a monitoring system outside the containment vessel. Special materials and special sealing techniques prevent failure of components and allow the float level switch to be connected to a monitoring system outside the containment vessel.

  13. Gas mixture for diffuse-discharge switch

    DOE Patents [OSTI]

    Christophorou, Loucas G. (Oak Ridge, TN); Carter, James G. (Knoxville, TN); Hunter, Scott R. (Oak Ridge, TN)

    1984-01-01

    Gaseous medium in a diffuse-discharge switch of a high-energy pulse generator is formed of argon combined with a compound selected from the group consisting of CF.sub.4, C.sub.2 F.sub.6, C.sub.3 F.sub.8, n-C.sub.4 F.sub.10, WF.sub.6, (CF.sub.3).sub.2 S and (CF.sub.3).sub.2 O.

  14. Multiple acousto-optic q-switch

    DOE Patents [OSTI]

    Deason, Vance A. (Idaho Falls, ID)

    1993-01-01

    An improved dynamic moire interferometer comprised of a lasing medium providing a plurality of beams of coherent light, a multiple q-switch producing multiple trains of 100,000 or more pulses per second, a combining means collimating multiple trains of pulses into substantially a single train and directing beams to specimen gratings affixed to a test material, and a controller, triggering and sequencing the emission of the pulses with the occurrence and recording of a dynamic loading event.

  15. Multiple acousto-optic q-switch

    DOE Patents [OSTI]

    Deason, Vance A.

    1993-12-07

    An improved dynamic moire interferometer comprised of a lasing medium providing a plurality of beams of coherent light, a multiple q-switch producing multiple trains of 100,000 or more pulses per second, a combining means collimating multiple trains of pulses into substantially a single train and directing beams to specimen gratings affixed to a test material, and a controller, triggering and sequencing the emission of the pulses with the occurrence and recording of a dynamic loading event.

  16. Gas mixture for diffuse-discharge switch

    DOE Patents [OSTI]

    Christophorou, L.G.; Carter, J.G.; Hunter, S.R.

    1982-08-31

    Gaseous medium in a diffuse-discharge switch of a high-energy pulse generator is formed of argon combined with a compound selected from the group consisting of CF/sub 4/, C/sub 2/F/sub 6/, C/sub 3/F/sub 8/, n-C/sub 4/F/sub 10/, WF/sub 6/, (CF/sub 3/)/sub 2/S and (CF/sub 3/)/sub 2/O.

  17. Switch Switch

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in LESCO 18 as a Transient Superconducting Phase is Formed Bill Schlotter or Josh Turner CXI L273 SPENCE,JOHN Dynamics of electron transfer: PSIferredoxin Sebastien Boutet...

  18. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect (OSTI)

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.; THORNTON,R.L.; DONALDSON,R.D.

    1999-12-17

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approx}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs, unlike a switch with conventional contacts. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  19. High-G testing of MEMS mechanical non-volatile memory and silicon...

    Office of Scientific and Technical Information (OSTI)

    High-G testing of MEMS mechanical non-volatile memory and silicon re-entry switch. Citation Details In-Document Search Title: High-G testing of MEMS mechanical non-volatile memory...

  20. Adsorption and switching properties of a N-benzylideneaniline based molecular switch on a Au(111) surface

    SciTech Connect (OSTI)

    Ovari, Laszlo; Luo, Ying; Haag, Rainer; Leyssner, Felix; Tegeder, Petra; Wolf, Martin

    2010-07-28

    High resolution electron energy loss spectroscopy has been employed to analyze the adsorption geometry and the photoisomerization ability of the molecular switch carboxy-benzylideneaniline (CBA) adsorbed on Au(111). CBA on Au(111) adopts a planar (trans) configuration in the first monolayer (ML) as well as for higher coverages (up to 6 ML), in contrast to the strongly nonplanar geometry of the molecule in solution. Illumination with UV light of CBA in direct contact with the Au(111) surface ({<=}1 ML) caused no changes in the vibrational structure, whereas at higher coverages (>1 ML) pronounced modifications of vibrational features were observed, which we assign to a trans{yields}cis isomerization. Thermal activation induced the back reaction to trans-CBA. We propose that the photoisomerization is driven by a direct (intramolecular) electronic excitation of the adsorbed CBA molecules in the second ML (and above) analogous to CBA in the liquid phase.

  1. Elastomeric organic material for switching application

    SciTech Connect (OSTI)

    Shiju, K. E-mail: pravymon@gmail.com Praveen, T. E-mail: pravymon@gmail.com Preedep, P. E-mail: pravymon@gmail.com

    2014-10-15

    Organic Electronic devices like OLED, Organic Solar Cells etc are promising as, cost effective alternatives to their inorganic counterparts due to various reasons. However the organic semiconductors currently available are not attractive with respect to their high cost and intricate synthesis protocols. Here we demonstrate that Natural Rubber has the potential to become a cost effective solution to this. Here an attempt has been made to fabricate iodine doped poly isoprene based switching device. In this work Poly methyl methacrylate is used as dielectric layer and Aluminium are employed as electrodes.

  2. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  3. In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory

    SciTech Connect (OSTI)

    Sun, Jun; Wu, Xing; Xu, Feng; Xu, Tao; Sun, Litao; Liu, Qi; Xie, Hongwei; Long, Shibing; Lv, Hangbing; Li, Yingtao; Liu, Ming

    2013-02-04

    In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the Ni/ZrO{sub 2}/Pt device. The device shows stable bipolar resistive switching behaviors after forming process, which is similar to the Ag/ZrO{sub 2}/Pt and Cu/ZrO{sub 2}/Pt devices. Using in situ transmission electron microscopy, we observe in real time that several conductive filaments are formed across the ZrO{sub 2} layer between Ni and Pt electrodes after forming. Energy-dispersive X-ray spectroscopy results confirm that Ni is the main composition of the conductive filaments. The ON-state resistance increases with increasing temperature, exhibiting the feature of metallic conduction. In addition, the calculated resistance temperature coefficient is equal to that of the 10-30 nm diameter Ni nanowire, further indicating that the nanoscale Ni conductive bridge is the physical origin of the observed conductive filaments. The resistive switching characteristics and the conductive filament's component of Ni/ZrO{sub 2}/Pt device are consistent with the characteristics of the typical solid-electrolyte-based resistive random access memory. Therefore, aside from Cu and Ag, Ni can also be used as an oxidizable electrode material for resistive random access memory applications.

  4. High voltage switches having one or more floating conductor layers

    DOE Patents [OSTI]

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  5. Fractofusion mechanism

    SciTech Connect (OSTI)

    Yasui, K. . Dept. of Physics)

    1992-11-01

    In this paper, the fractofusion mechanism of cold fusion is investigated theoretically. The conditions necessary for fractofusion during the absorption of deuterium atoms by palladium specimens (the condition of so-called cold fusion experiments) is clarified, including crack generation at grain boundaries, the high orientation angle of grains, rapid crack formation, the increase of electrical resistance around a crack, the large width of cracks, and the generation of many cracks. The origin and quantity of the electrical field inside cracks in the conductor are also clarified. By the fractofusion mechanism, the experimental facts that neutron emissions are observed in bursts, that sometimes they coincide with the deformation of a palladium specimen, and that in many experiments excess neutrons were not observed are qualitatively explained. The upper limit of the total fractofusion yields during the absorption of deuterium atoms by palladium specimens are estimated.

  6. Organic solid state switches incorporating porphyrin compounds and method for producing organic solid state optical switches

    DOE Patents [OSTI]

    Wasielewski, M.R.; Gaines, G.L.; Niemczyk, M.P.; Johnson, D.G.; Gosztola, D.J.; O`Neil, M.P.

    1996-07-23

    A light-intensity dependent molecular switch comprised of a compound which shuttles an electron or a plurality of electrons from a plurality of electron donors to an electron acceptor upon being stimulated with light of predetermined wavelengths, said donors selected from porphyrins and other compounds, and a method for making said compound are disclosed. 4 figs.

  7. Organic solid state switches incorporating porphyrin compounds and method for producing organic solid state optical switches

    DOE Patents [OSTI]

    Wasielewski, Michael R. (Naperville, IL); Gaines, George L. (River Forest, IL); Niemczyk, Mark P. (Wheaton, IL); Johnson, Douglas G. (Grayslake, IL); Gosztola, David J. (Bolingbrook, IL); O'Neil, Michael P. (San Leandro, CA)

    1996-01-01

    A light-intensity dependent molecular switch comprised of a compound which shuttles an electron or a plurality of electrons from a plurality of electron donors to an electron acceptor upon being stimulated with light of predetermined wavelengths, said donors selected from porphyrins and other compounds, and a method for making said compound.

  8. Organic solid state optical switches and method for producing organic solid state optical switches

    DOE Patents [OSTI]

    Wasielewski, M.R.; Gaines, G.L.; Niemczyk, M.P.; Johnson, D.G.; Gosztola, D.J.; O`Neil, M.P.

    1993-01-01

    This invention consists of a light-intensity dependent molecular switch comprised of a compound which shuttles an electron or a plurality of electrons from a plurality of electron donors to an electron acceptor upon being stimulated with light of predetermined wavelengths, and a method for making said compound.

  9. Current-level triggered plasma-opening switch

    DOE Patents [OSTI]

    Mendel, Clifford W. (Albuquerque, NM)

    1989-01-01

    An opening switch for very high power electrical pulses uses a slow magnetic field to confine a plasma across a gap between two electrodes. The plasma conducts the electric pulse across the gap while the switch is closed. A magnetic field generated by the pulse repels the slow magnetic field from the negative electrode to push the plasma from the electrode, opening the switch. A plurality of radial vanes may be used to enhance the slow magnetic field.

  10. Current-level triggered plasma-opening switch

    DOE Patents [OSTI]

    Mendel, C.W.

    1987-06-29

    An opening switch for very high power electrical pulses uses a slow magnetic field to confine a plasma across a gap between two electrodes. The plasma conducts the electric pulse across the gap while the switch is closed. A magnetic field generated by the pulse repels the slow magnetic field from the negative electrode to push the plasma from the electrode, opening the switch. A plurality of radial vanes may be used to enhance the slow magnetic field. 5 figs.

  11. Robust Diamond-Based RF Switch Yields Enhanced Communication Capabilities |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Argonne National Laboratory Robust Diamond-Based RF Switch Yields Enhanced Communication Capabilities Technology available for licesning: A radio frequency (RF) microelectromechanical system (MEMS) switch based on ultrananocrystalline diamond (UNCD) as a dielectric. A specialized radio frequency (RF) micro-electromechanical system (MEMS) switch that promises enhanced capabilities for next-generation military and commercial communication systems Robust and reliable with extremely low power

  12. Fast high-temperature superconductor switch for high current applications

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Fast high-temperature superconductor switch for high current applications Citation Details In-Document Search Title: Fast high-temperature superconductor switch for high current applications Reversible operation of a high current superconductor switch based on the quench of high-resistance second generation high temperature superconducting wire is demonstrated. The quench is induced by a burst of an ac field generated by an inductively coupled

  13. Massachusetts Schools Switch to Wood Pellets | Department of Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Massachusetts Schools Switch to Wood Pellets Massachusetts Schools Switch to Wood Pellets August 20, 2015 - 5:22pm Addthis Art created by a student at John Briggs Elementary School as part of their recent Green Ceremony. John Briggs Elementary is one of the Massachusetts schools switching their heating fuel source from petroleum based fuels to wood pellets. Art created by a student at John Briggs Elementary School as part of their recent Green Ceremony. John Briggs Elementary is one of the

  14. Thermionic switched self-actuating reactor shutdown system

    DOE Patents [OSTI]

    Barrus, Donald M. (San Jose, CA); Shires, Charles D. (San Jose, CA); Brummond, William A. (Livermore, CA)

    1989-01-01

    A self-actuating reactor shutdown system incorporating a thermionic switched electromagnetic latch arrangement which is responsive to reactor neutron flux changes and to reactor coolant temperature changes. The system is self-actuating in that the sensing thermionic device acts directly to release (scram) the control rod (absorber) without reference or signal from the main reactor plant protective and control systems. To be responsive to both temperature and neutron flux effects, two detectors are used, one responsive to reactor coolant temperatures, and the other responsive to reactor neutron flux increase. The detectors are incorporated into a thermionic diode connected electrically with an electromagnetic mechanism which under normal reactor operating conditions holds the the control rod in its ready position (exterior of the reactor core). Upon reaching either a specified temperature or neutron flux, the thermionic diode functions to short-circuit the electromagnetic mechanism causing same to lose its holding power and release the control rod, which drops into the reactor core region under gravitational force.

  15. Electrocaloric devices based on thini-film heat switches

    SciTech Connect (OSTI)

    Epstein, Richard I; Malloy, Kevin J

    2009-01-01

    We describe a new approach to refrigeration and electrical generation that exploits the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of these thin-film heat engines can be at least as high as that of current thermoelectric devices. Advanced heat switches would enable thin-film heat engines to outperform conventional vaporcompression devices.

  16. Multi-gap high impedance plasma opening switch

    DOE Patents [OSTI]

    Mason, R.J.

    1996-10-22

    A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode is disclosed. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources. 12 figs.

  17. Multi-gap high impedance plasma opening switch

    DOE Patents [OSTI]

    Mason, Rodney J.

    1996-01-01

    A high impedance plasma opening switch having an anode and a cathode and at least one additional electrode placed between the anode and cathode. The presence of the additional electrodes leads to the creation of additional plasma gaps which are in series, increasing the net impedance of the switch. An equivalent effect can be obtained by using two or more conventional plasma switches with their plasma gaps wired in series. Higher impedance switches can provide high current and voltage to higher impedance loads such as plasma radiation sources.

  18. Commute Mode Switching Impact Tool | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Commute Mode Switching Impact Tool. ghgcommutetool.xlsx More Documents & Publications Energy Intensity Indicators Data Residential Refrigerators-Freezers (Appendix A1)...

  19. DNA-mediated excitonic upconversion FRET switching

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kellis, Donald L.; Rehn, Sarah M.; Cannon, Brittany L.; Davis, Paul H.; Graugnard, Elton; Lee, Jeunghoon; Yurke, Bernard; Knowlton, William B.

    2015-11-17

    Excitonics is a rapidly expanding field of nanophotonics in which the harvesting of photons, ensuing creation and transport of excitons via Förster resonant energy transfer (FRET), and subsequent charge separation or photon emission has led to the demonstration of excitonic wires, switches, Boolean logic and light harvesting antennas for many applications. FRET funnels excitons down an energy gradient resulting in energy loss with each step along the pathway. Conversely, excitonic energy up conversion via up conversion nanoparticles (UCNPs), although currently inefficient, serves as an energy ratchet to boost the exciton energy. Although FRET-based up conversion has been demonstrated, it suffersmore » from low FRET efficiency and lacks the ability to modulate the FRET. We have engineered an up conversion FRET-based switch by combining lanthanide-doped UCNPs and fluorophores that demonstrates excitonic energy up conversion by nearly a factor of 2, an excited state donor to acceptor FRET efficiency of nearly 25%, and an acceptor fluorophore quantum efficiency that is close to unity. These findings offer a promising path for energy up conversion in nanophotonic applications including artificial light harvesting, excitonic circuits, photovoltaics, nanomedicine, and optoelectronics.« less

  20. DNA-mediated excitonic upconversion FRET switching

    SciTech Connect (OSTI)

    Kellis, Donald L.; Rehn, Sarah M.; Cannon, Brittany L.; Davis, Paul H.; Graugnard, Elton; Lee, Jeunghoon; Yurke, Bernard; Knowlton, William B.

    2015-11-17

    Excitonics is a rapidly expanding field of nanophotonics in which the harvesting of photons, ensuing creation and transport of excitons via Förster resonant energy transfer (FRET), and subsequent charge separation or photon emission has led to the demonstration of excitonic wires, switches, Boolean logic and light harvesting antennas for many applications. FRET funnels excitons down an energy gradient resulting in energy loss with each step along the pathway. Conversely, excitonic energy up conversion via up conversion nanoparticles (UCNPs), although currently inefficient, serves as an energy ratchet to boost the exciton energy. Although FRET-based up conversion has been demonstrated, it suffers from low FRET efficiency and lacks the ability to modulate the FRET. We have engineered an up conversion FRET-based switch by combining lanthanide-doped UCNPs and fluorophores that demonstrates excitonic energy up conversion by nearly a factor of 2, an excited state donor to acceptor FRET efficiency of nearly 25%, and an acceptor fluorophore quantum efficiency that is close to unity. These findings offer a promising path for energy up conversion in nanophotonic applications including artificial light harvesting, excitonic circuits, photovoltaics, nanomedicine, and optoelectronics.

  1. Humidity effects on tip-induced polarization switching in lithium niobate

    SciTech Connect (OSTI)

    Ievlev, A. V.; Morozovska, A. N.; Shur, V. Ya.; Kalinin, S. V.

    2014-03-03

    In the last several decades, ferroelectrics have attracted much attention as perspective materials for nonlinear optics and data storage devices. Scanning probe microscopy (SPM) has emerged as a powerful tool both for studies of domain structures with nanoscale spatial resolution and for writing the isolated nanodomains by local application of the electric field. Quantitative analysis of the observed behavior requires understanding the role of environmental factors on imaging and switching process. Here, we study the influence of the relative humidity in the SPM chamber on tip-induced polarization switching. The observed effects are attributed to existence of a water meniscus between the tip and the sample surface in humid atmosphere. These results are important for a deeper understanding of complex investigations of ferroelectric materials and their applications and suggest the necessity for fundamental studies of electrocapillary phenomena at the tip-surface junction and their interplay with bias-induced materials responses.

  2. Humidity effects on tip-induced polarization switching in lithium niobate

    SciTech Connect (OSTI)

    Ievlev, Anton; Morozovska, A. N.; Shur, Vladimir Ya.; Kalinin, Sergei V

    2014-01-01

    In the last several decades, ferroelectrics have attracted much attention as perspective materials for nonlinear optics and data storage devices. Scanning probe microscopy (SPM) has emerged as a powerful tool both for studies of domain structures with nanoscale spatial resolution and for writing the isolated nanodomains by local application of the electric field. Quantitative analysis of the observed behavior requires understanding the role of environmental factors on imaging and switching process. Here we study the influence of the relative humidity in the SPM chamber on tip-induced polarization switching. The observed effects are attributed to existence of a water meniscus between the tip and the sample surface in humid atmosphere. These results are important for a deeper understanding of complex investigations of ferroelectric materials and their applications, and suggest the necessity for fundamental studies of electrocapillary phenomena at the tip-surface junction and their interplay with bias-induced materials responses.

  3. Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

    SciTech Connect (OSTI)

    Khan, Asif Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

    2014-06-30

    A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

  4. DC switching regulated power supply for driving an inductive load

    DOE Patents [OSTI]

    Dyer, George R. (Norris, TN)

    1986-01-01

    A power supply for driving an inductive load current from a dc power supply hrough a regulator circuit including a bridge arrangement of diodes and switching transistors controlled by a servo controller which regulates switching in response to the load current to maintain a selected load current. First and second opposite legs of the bridge are formed by first and second parallel-connected transistor arrays, respectively, while the third and fourth legs of the bridge are formed by appropriately connected first and second parallel connected diode arrays, respectively. The regulator may be operated in three "stages" or modes: (1) For current runup in the load, both first and second transistor switch arrays are turned "on" and current is supplied to the load through both transistor arrays. (2) When load current reaches the desired level, the first switch is turned "off", and load current "flywheels" through the second switch array and the fourth leg diode array connecting the second switch array in series with the load. Current is maintained by alternating between modes 1 and 2 at a suitable duty cycle and switching rate set by the controller. (3) Rapid current rundown is accomplished by turning both switch arrays "off", allowing load current to be dumped back into the source through the third and fourth diode arrays connecting the source in series opposition with the load to recover energy from the inductive load. The three operating states are controlled automatically by the controller.

  5. DC switching regulated power supply for driving an inductive load

    DOE Patents [OSTI]

    Dyer, G.R.

    1983-11-29

    A dc switching regulated power supply for driving an inductive load is provided. The regulator basic circuit is a bridge arrangement of diodes and transistors. First and second opposite legs of the bridge are formed by first and second parallel-connected transistor arrays, respectively, while the third and fourth legs of the bridge are formed by appropriately connected first and second parallel connected diode arrays, respectively. A dc power supply is connected to the input of the bridge and the output is connected to the load. A servo controller is provided to control the switching rate of the transistors to maintain a desired current to the load. The regulator may be operated in three stages or modes: (1) for current runup in the load, both first and second transistor switch arrays are turned on and current is supplied to the load through both transistor arrays. (2) When load current reaches the desired level, the first switch is turned off, and load current flywheels through the second switch array and the fourth leg diode array connecting the second switch array in series with the load. Current is maintained by alternating between modes 1 and 2 at a suitable duty cycle and switching rate set by the controller. (3) Rapid current rundown is accomplished by turning both switch arrays off, allowing load current to be dumped back into the source through the third and fourth diode arrays connecting the source in series opposition with the load to recover energy from the inductive load.

  6. All fiber passively Q-switched laser

    DOE Patents [OSTI]

    Soh, Daniel B. S.; Bisson, Scott E

    2015-05-12

    Embodiments relate to an all fiber passively Q-switched laser. The laser includes a large core doped gain fiber having a first end. The large core doped gain fiber has a first core diameter. The laser includes a doped single mode fiber (saturable absorber) having a second core diameter that is smaller than the first core diameter. The laser includes a mode transformer positioned between a second end of the large core doped gain fiber and a first end of the single mode fiber. The mode transformer has a core diameter that transitions from the first core diameter to the second core diameter and filters out light modes not supported by the doped single mode fiber. The laser includes a laser cavity formed between a first reflector positioned adjacent the large core doped gain fiber and a second reflector positioned adjacent the doped single mode fiber.

  7. Permanent-magnet switched-flux machine

    DOE Patents [OSTI]

    Trzynadlowski, Andrzej M.; Qin, Ling

    2012-02-21

    A permanent-magnet switched-flux (PMSF) device has an outer rotor mounted to a shaft about a central axis extending axially through the PMSF device. First and second pluralities of permanent-magnets (PMs) are respectively mounted in first and second circles, radially outwardly in first and second transverse planes extending from first and second sections of the central axis adjacent to an inner surface of the outer rotor. An inner stator is coupled to the shaft and has i) a stator core having a core axis co-axial with the central axis; and ii) first and second pluralities of stator poles mounted in first and second circles, radially outwardly from the stator core axis in the first and second transverse planes. The first and second pluralities of PMs each include PMs of alternating polarity.

  8. High voltage photo switch package module

    DOE Patents [OSTI]

    Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen E

    2014-02-18

    A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces, and at least one light-input surface. First metallic layers are formed on the electrode-interface surfaces, and one or more optical waveguides having input and output ends are bonded to the substrate so that the output end of each waveguide is bonded to a corresponding one of the light-input surfaces of the photo-conductive substrate. This forms a waveguide-substrate interface for coupling light into the photo-conductive wafer. A dielectric material such as epoxy is then used to encapsulate the photo-conductive substrate and optical waveguide so that only the metallic layers and the input end of the optical waveguide are exposed. Second metallic layers are then formed on the first metallic layers so that the waveguide-substrate interface is positioned under the second metallic layers.

  9. Path planning during combustion mode switch

    DOE Patents [OSTI]

    Jiang, Li; Ravi, Nikhil

    2015-12-29

    Systems and methods are provided for transitioning between a first combustion mode and a second combustion mode in an internal combustion engine. A current operating point of the engine is identified and a target operating point for the internal combustion engine in the second combustion mode is also determined. A predefined optimized transition operating point is selected from memory. While operating in the first combustion mode, one or more engine actuator settings are adjusted to cause the operating point of the internal combustion engine to approach the selected optimized transition operating point. When the engine is operating at the selected optimized transition operating point, the combustion mode is switched from the first combustion mode to the second combustion mode. While operating in the second combustion mode, one or more engine actuator settings are adjusted to cause the operating point of the internal combustion to approach the target operating point.

  10. Eddy-current-damped microelectromechanical switch

    DOE Patents [OSTI]

    Christenson, Todd R.; Polosky, Marc A.

    2009-12-15

    A microelectromechanical (MEM) device is disclosed that includes a shuttle suspended for movement above a substrate. A plurality of permanent magnets in the shuttle of the MEM device interact with a metal plate which forms the substrate or a metal portion thereof to provide an eddy-current damping of the shuttle, thereby making the shuttle responsive to changes in acceleration or velocity of the MEM device. Alternately, the permanent magnets can be located in the substrate, and the metal portion can form the shuttle. An electrical switch closure in the MEM device can occur in response to a predetermined acceleration-time event. The MEM device, which can be fabricated either by micromachining or LIGA, can be used for sensing an acceleration or deceleration event (e.g. in automotive applications such as airbag deployment or seat belt retraction).

  11. Eddy-current-damped microelectromechanical switch

    DOE Patents [OSTI]

    Christenson, Todd R.; Polosky, Marc A.

    2007-10-30

    A microelectromechanical (MEM) device is disclosed that includes a shuttle suspended for movement above a substrate. A plurality of permanent magnets in the shuttle of the MEM device interact with a metal plate which forms the substrate or a metal portion thereof to provide an eddy-current damping of the shuttle, thereby making the shuttle responsive to changes in acceleration or velocity of the MEM device. Alternately, the permanent magnets can be located in the substrate, and the metal portion can form the shuttle. An electrical switch closure in the MEM device can occur in response to a predetermined acceleration-time event. The MEM device, which can be fabricated either by micromachining or LIGA, can be used for sensing an acceleration or deceleration event (e.g. in automotive applications such as airbag deployment or seat belt retraction).

  12. Permanent-magnet switched-flux machine

    DOE Patents [OSTI]

    Trzynadlowski, Andrzej M.; Qin, Ling

    2010-01-12

    A permanent-magnet switched-flux (PMSF) device has a ferromagnetic outer stator mounted to a shaft about a central axis extending axially through the PMSF device. Pluralities of top and bottom stator poles are respectively mounted in first and second circles, radially outwardly in first and second transverse planes extending from first and second sections of the central axis adjacent to an inner surface of the ferromagnetic outer stator. A ferromagnetic inner rotor is coupled to the shaft and has i) a rotor core having a core axis co-axial with the central axis; and ii) first and second discs having respective outer edges with first and second pluralities of permanent magnets (PMs) mounted in first and second circles, radially outwardly from the rotor core axis in the first and second transverse planes. The first and second pluralities of PMs each include PMs of alternating polarity.

  13. Permanent-magnet switched-flux machine

    DOE Patents [OSTI]

    Trzynadlowski, Andrzej M.; Qin, Ling

    2011-06-14

    A permanent-magnet switched-flux (PMSF) device has an outer rotor mounted to a shaft about a central axis extending axially through the PMSF device. First and second pluralities of permanent-magnets (PMs) are respectively mounted in first and second circles, radially outwardly in first and second transverse planes extending from first and second sections of the central axis adjacent to an inner surface of the outer rotor. An inner stator is coupled to the shaft and has i) a stator core having a core axis co-axial with the central axis; and ii) first and second pluralities of stator poles mounted in first and second circles, radially outwardly from the stator core axis in the first and second transverse planes. The first and second pluralities of PMs each include PMs of alternating polarity.

  14. Semiconductor switch geometry with electric field shaping

    DOE Patents [OSTI]

    Booth, R.; Pocha, M.D.

    1994-08-23

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

  15. Semiconductor switch geometry with electric field shaping

    DOE Patents [OSTI]

    Booth, Rex (Livermore, CA); Pocha, Michael D. (Livermore, CA)

    1994-01-01

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

  16. Intrinsic SiO{sub x}-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

    SciTech Connect (OSTI)

    Chang, Yao-Feng Chen, Ying-Chen; Chen, Yen-Ting; Wang, Yanzhen; Xue, Fei; Zhou, Fei; Lee, Jack C.; Fowler, Burt

    2014-07-28

    Multilevel programing and charge transport characteristics of intrinsic SiO{sub x}-based resistive switching memory are investigated using TaN/SiO{sub x}/n{sup ++}Si (MIS) and TiW/SiO{sub x}/TiW (MIM) device structures. Current transport characteristics of high- and low-resistance states (HRS and LRS) are studied in both device structures during multilevel operation. Analysis of device thermal response demonstrates that the effective electron energy barrier is strongly dependent on the resistance of the programed state, with estimates of 0.1?eV in the LRS and 0.6?eV in the HRS. Linear data fitting and conductance analyses indicate Poole-Frenkel emission or hopping conductance in the low-voltage region, whereas Fowler-Nordheim (F-N) or trap-assisted tunneling (TAT) is indicated at moderate voltage. Characterizations using hopping transport lead to hopping distance estimates of ?1?nm in the LRS for both device structures. Relative permittivity values (?{sub r}) were extracted using the Poole-Frenkel formulism and estimates of local filament temperature, where ?{sub r} values were ?80 in the LRS and ?4 in the HRS, suggesting a strongly polarized medium in the LRS. The onset of F-N tunneling or TAT corresponds to an observed overshoot in the I-V response with an estimated threshold of 1.6??0.2?V, in good agreement with reported electro-luminescence results for LRS devices. Resistive switching is discussed in terms of electrochemical reactions between common SiO{sub 2} defects, and specific defect energy levels are assigned to the dominant transitions in the I-V response. The overshoot response in the LRS is consistent with TAT through either the E?' oxygen vacancy or the hydrogen bridge defect, both of which are reported to have an effective bandgap of 1.7?eV. The SET threshold at ?2.5?V is modeled as hydrogen release from the (Si-H){sub 2} defect to generate the hydrogen bridge, and the RESET transition is modeled as an electrochemical reaction that re-forms (SiH){sub 2}. The results provide further insights into charge transport and help identify potential switching mechanisms in SiO{sub x}-based unipolar resistive switching memory.

  17. Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

    SciTech Connect (OSTI)

    Sharath, S. U. Kurian, J.; Komissinskiy, P.; Hildebrandt, E.; Alff, L.; Bertaud, T.; Walczyk, C.; Calka, P.; Schroeder, T.

    2014-08-18

    The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3?V is observed up to 200?nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

  18. The electrical and mechanical properties of Au-V and Au-V{sub 2}O{sub 5}

    Office of Scientific and Technical Information (OSTI)

    thin films for wear-resistant RF MEMS switches (Journal Article) | SciTech Connect Journal Article: The electrical and mechanical properties of Au-V and Au-V{sub 2}O{sub 5} thin films for wear-resistant RF MEMS switches Citation Details In-Document Search Title: The electrical and mechanical properties of Au-V and Au-V{sub 2}O{sub 5} thin films for wear-resistant RF MEMS switches To explore alternatives to the use of pure Au in Ohmic contact RF microelectromechanical switches, we have

  19. A spin light emitting diode incorporating ability of electrical helicity switching

    SciTech Connect (OSTI)

    Nishizawa, N., E-mail: nishizawa@isl.titech.ac.jp; Nishibayashi, K.; Munekata, H. [Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-J3-15 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2014-03-17

    Fabrication and optical characteristics of a spin light-emitting-diode (spin-LED) having dual spin-injection electrodes with anti-parallel magnetization configuration are reported. Alternating a current between the two electrodes using a computer-driven current source has led us to the observation of helicity switching of circular polarization at the frequency of 1 kHz. Neither external magnetic fields nor optical delay modulators were used. Sending dc-currents to both electrodes with appropriate ratio has resulted in continuous variation of circular polarization between the two opposite helicity, including the null polarization. These results suggest that the tested spin-LED has the feasibility of a monolithic light source whose circular polarization can be switched or continuously tuned all electrically.

  20. Resistance switching in epitaxial SrCoO{sub x} thin films

    SciTech Connect (OSTI)

    Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

    2014-08-11

    We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO{sub 3} (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO{sub 2.5}) and conducting perovskite (SrCoO{sub 3??}) depending on the oxygen content. The currentvoltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO{sub x} thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO{sub 2.5}.

  1. Reduced Switching Frequency Active Harmonic Elimination for Multilevel Converters

    SciTech Connect (OSTI)

    Du, Zhong; Tolbert, Leon M; Chiasson, John N; Ozpineci, Burak

    2008-01-01

    This paper presents a reduced switching-frequency active-harmonic-elimination method (RAHEM) to eliminate any number of specific order harmonics of multilevel converters. First, resultant theory is applied to transcendental equations to eliminate low-order harmonics and to determine switching angles for a fundamental frequency-switching scheme. Next, based on the number of harmonics to be eliminated, Newton climbing method is applied to transcendental equations to eliminate high-order harmonics and to determine switching angles for the fundamental frequency-switching scheme. Third, the magnitudes and phases of the residual lower order harmonics are computed, generated, and subtracted from the original voltage waveform to eliminate these low-order harmonics. Compared to the active-harmonic-elimination method (AHEM), which generates square waves to cancel high-order harmonics, RAHEM has lower switching frequency. The simulation results show that the method can effectively eliminate all the specific harmonics, and a low total harmonic distortion (THD) near sine wave is produced. An experimental 11-level H-bridge multilevel converter with a field-programmable gate-array controller is employed to experimentally validate the method. The experimental results show that RAHEM does effectively eliminate any number of specific harmonics, and the output voltage waveform has low switching frequency and low THD.

  2. Capacitive microelectromechanical switches with dynamic soft-landing

    DOE Patents [OSTI]

    Jain, Ankit; Alam, Muhammad Ashraful; Nair, Pradeep R.

    2015-10-13

    A microelectromechanical system (MEMS)-based electrical switch. The electrical switch includes a moveable electrode, a dielectric layer positioned adjacent the moveable electrode on a first side of the dielectric layer and spaced apart from the moveable electrode when the moveable electrode is in an inactivated position and in contact with the moveable electrode when the moveable electrode is in an activated position, and a substrate attached to the dielectric layer on a second side opposite to the first side, the moveable electrode is configured to brake prior to coming in contact with the dielectric layer when the moveable electrode is switched between the inactivated state and the activated state.

  3. Spintronic switches for ultra low energy global interconnects

    SciTech Connect (OSTI)

    Sharad, Mrigank Roy, Kaushik

    2014-05-07

    We present ultra-low energy interconnect design using nano-scale spin-torque (ST) switches for global data-links. Emerging spin-torque phenomena can lead to ultra-low-voltage, high-speed current-mode magnetic-switches. ST-switches can simultaneously provide large trans-impedance gain by employing magnetic tunnel junctions, to convert current-mode signals into large-swing voltage levels. Such device-characteristics can be used in the design of energy-efficient current-mode global interconnects.

  4. Electrical Breakdown Physics in Photoconductive Semiconductor Switches (PCSS).

    SciTech Connect (OSTI)

    Mar, Alan; Zutavern, Fred J.; Vawter, Gregory A.; Hjalmarson, Harold P.; Gallegos, Richard Joseph; Bigman, Verle Howard

    2016-01-01

    Advanced switching devices with long lifetime will be critical components for Linear Transformer Drivers (LTDs) in next-generation accelerators. LTD designs employ high switch counts. With current gas switch technology at %7E10e3 shot life, a potential game-changer would be the development of a reliable low-impedance (%3C35nh) optically-triggered compact solid-state switch capable of switching 200kV and 50kA with 10e5 shotlife or better. Other applications of this technology, are pulse shaping programmable systems for dynamic material studies (Z-next, Genesis), efficient pulsed power systems for biofuel feedstock, short pulse (10 ns) accelerator designs for the Defense Threat Reduction Agency (DTRA), and sprytron replacements in NW firing sets. This LDRD project has succeeded in developing new optically-triggered photoconductive semiconductor switch (PCSS) designs that show great promise for scaling to modules capable of 200kV (DC) and 5kA current that can be stacked in parallel to achieve 100's of kA with 10e5 shot lifetime. . Executive Summary Advanced switching devices with long lifetime will be critical components for Linear Transformer Drivers (LTDs) in next-generation accelerators. LTD designs employ high switch counts. With current gas switch technology at %7E10e3 shot life, a potential game-changer would be the development of a reliable low-impedance (%3C35nh) optically-triggered compact solid-state switch capable of switching 200kV and 50kA with 10e5 shotlife or better. Other applications of this technology, are pulse shaping programmable systems for dynamic material studies (Z-next, Genesis), efficient pulsed power systems for biofuel feedstock, short pulse (10 ns) accelerator designs for the Defense Threat Reduction Agency (DTRA), and sprytron replacements in NW firing sets. This LDRD project has succeeded in developing new optically-triggered photoconductive semiconductor switch (PCSS) designs that show great promise for scaling to modules capable of 200kV (DC) and 5kA current that can be stacked in parallel to achieve 100's of kA with 10e5 shot lifetime. The new vertical switch design configuration generates parallel filaments in the bulk GaAs (as opposed to just beneath the surface as in previous designs) to achieve breakdown fields close to the maximum for the bulk GaAs while operating in air, and with 2-D scalability of the number of current-sharing filaments. This design also may be highly compatible with 2-D VCSEL arrays for optical triggering. The demonstration of this design in this LDRD utilized standard thickness wafers to trigger 0.4kA at 35kV/cm (limited by 0.6mm wafer thickness), tested to 1e5 shots with no detectable degradation of switch performance. Higher fields, total current, and switching voltages would be achievable with thicker GaAs wafers. Another important application pursued in this LDRD is the use of PCSS for trigger generator applications. Conventional in-plane PCSS have achieved triggering of a 100kV sparkgap (Kinetech-type) switch of the type similar to switches being considered for accelerator upgrades. The trigger is also being developed for pulsed power for HPM applications that require miniaturization and robust performance in noisy compact environments. This has spawned new programs for developing this technology, including an STTR for VCSEL trigger laser integration, also pursuing other follow-on applications.

  5. Spark gap device for precise switching

    DOE Patents [OSTI]

    Boettcher, G.E.

    1984-10-02

    A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations. 3 figs.

  6. Spark gap device for precise switching

    DOE Patents [OSTI]

    Boettcher, Gordon E. (Albuquerque, NM)

    1984-01-01

    A spark gap device for precise switching of an energy storage capacitor into an exploding bridge wire load is disclosed. Niobium electrodes having a melting point of 2,415 degrees centrigrade are spaced apart by an insulating cylinder to define a spark gap. The electrodes are supported by conductive end caps which, together with the insulating cylinder, form a hermetically sealed chamber filled with an inert, ionizable gas, such as pure xenon. A quantity of solid radioactive carbon-14 within the chamber adjacent the spark gap serves as a radiation stabilizer. The sides of the electrodes and the inner wall of the insulating cylinder are spaced apart a sufficient distance to prevent unwanted breakdown initiation. A conductive sleeve may envelop the outside of the insulating member from the midpoint of the spark gap to the cap adjacent the cathode. The outer metallic surfaces of the device may be coated with a hydrogen-impermeable coating to lengthen the shelf life and operating life of the device. The device breaks down at about 1,700 volts for input voltage rates up to 570 volts/millisecond and allows peak discharge currents of up to 3,000 amperes from a 0.3 microfarad energy storage capacitor for more than 1,000 operations.

  7. Metal-to-insulator switching in quantum anomalous Hall states

    SciTech Connect (OSTI)

    Kou, Xufeng; Pan, Lei; Wang, Jing; Fan, Yabin; Choi, Eun Sang; Lee, Wei -Li; Nie, Tianxiao; Murata, Koichi; Shao, Qiming; Zhang, Shou -Cheng; Wang, Kang L.

    2015-10-07

    After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr0.12Bi0.26Sb0.62)2Te3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phase diagram is confirmed through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. Additionally, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.

  8. Metal-to-insulator switching in quantum anomalous Hall states

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kou, Xufeng; Pan, Lei; Wang, Jing; Fan, Yabin; Choi, Eun Sang; Lee, Wei -Li; Nie, Tianxiao; Murata, Koichi; Shao, Qiming; Zhang, Shou -Cheng; et al

    2015-10-07

    After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr0.12Bi0.26Sb0.62)2Te3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phase diagram is confirmed through themore » angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. Additionally, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.« less

  9. Switching behaviors of graphene-boron nitride nanotube heterojunctions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; Amorim, Rodrigo G.; Pandey, Ravindra; Tiwari, Bishnu; Zhang, Dongyan; Liu, Yang; Li, An -Ping; Yap, Yoke Khin

    2015-07-20

    High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5more » V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.« less

  10. Get Current: Switch on Clean Energy Activity Book

    SciTech Connect (OSTI)

    2014-06-01

    Switching on clean energy technologies means strengthening the economy while protecting the environment. This activity book for all ages promotes energy awareness, with facts on different types of energy and a variety of puzzles in an energy theme.

  11. Switching behaviors of graphene-boron nitride nanotube heterojunctions

    SciTech Connect (OSTI)

    Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; Amorim, Rodrigo G.; Pandey, Ravindra; Tiwari, Bishnu; Zhang, Dongyan; Liu, Yang; Li, An -Ping; Yap, Yoke Khin

    2015-07-20

    High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5 V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.

  12. All-optical switching in optically induced nonlinear waveguide couplers

    SciTech Connect (OSTI)

    Diebel, Falko Boguslawski, Martin; Rose, Patrick; Denz, Cornelia; Leykam, Daniel; Desyatnikov, Anton S.

    2014-06-30

    We experimentally demonstrate all-optical vortex switching in nonlinear coupled waveguide arrays optically induced in photorefractive media. Our technique is based on multiplexing of nondiffracting Bessel beams to induce various types of waveguide configurations. Using double- and quadruple-well potentials, we demonstrate precise control over the coupling strength between waveguides, the linear and nonlinear dynamics and symmetry-breaking bifurcations of guided light, and a power-controlled optical vortex switch.

  13. New Mathematical Method Reveals Where Genes Switch On or Off

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Mathematical Method Reveals Where Genes Switch On or Off New Mathematical Method Reveals Where Genes Switch On or Off "Compressed sensing" determines atomic-level energy potentials with accuracy approaching experimental measurement February 22, 2012 John Hules, JAHules@lbl.gov, +1 510 486 6008 Figure 1. Helix-turn-helix (HTH) proteins are the most widely distributed family of DNA-binding proteins, occurring in all biological kingdoms. This image shows a lambda repressor HTH

  14. Multiprocessor switch with selective pairing (Patent) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Multiprocessor switch with selective pairing Citation Details In-Document Search Title: Multiprocessor switch with selective pairing System, method and computer program product for a multiprocessing system to offer selective pairing of processor cores for increased processing reliability. A selective pairing facility is provided that selectively connects, i.e., pairs, multiple microprocessor or processor cores to provide one highly reliable thread (or thread group). Each paired microprocessor or

  15. Guest Molecule Induced Switching of Electrical Conduction in a

    Office of Scientific and Technical Information (OSTI)

    Metal-Organic Framework. (Journal Article) | SciTech Connect Guest Molecule Induced Switching of Electrical Conduction in a Metal-Organic Framework. Citation Details In-Document Search Title: Guest Molecule Induced Switching of Electrical Conduction in a Metal-Organic Framework. Authors: Stavila, Vitalie ; Talin, Albert Alec ; Allendorf, Mark D. ; Foster, Michael E. ; Centrone, Andrea ; Haney, Paul ; Kinney, R. Adam ; Szalai, Veronika ; Yook, Heayoung ; Thurston, Bryce ; Buzmetov, Dmitry

  16. Length Scale of Leidenfrost Ratchet Switches Droplet Directionality

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Length Scale of Leidenfrost Ratchet Switches Droplet Directionality Citation Details In-Document Search Title: Length Scale of Leidenfrost Ratchet Switches Droplet Directionality Arrays of tilted pillars with characteristic heights spanning from hundreds of nanometers to tens of micrometers were created using wafer level processing and used as Leidenfrost ratchets to control droplet directionality. Dynamic Leidenfrost droplets on the ratchets with

  17. Emerging Resistive Switching Memory Technologies: Overview and Current

    Office of Scientific and Technical Information (OSTI)

    Status. (Conference) | SciTech Connect Emerging Resistive Switching Memory Technologies: Overview and Current Status. Citation Details In-Document Search Title: Emerging Resistive Switching Memory Technologies: Overview and Current Status. Abstract not provided. Authors: Marinella, Matthew Publication Date: 2014-05-01 OSTI Identifier: 1147687 Report Number(s): SAND2014-4459C 521502 DOE Contract Number: DE-AC04-94AL85000 Resource Type: Conference Resource Relation: Conference: ISCAS 2014 held

  18. Flipping the switch on magnetism in strontium titanate

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Flipping the switch on magnetism in strontium titanate Flipping the switch on magnetism in strontium titanate Researchers have found a way to magnetize this material using light, an effect that persists for hours at a time. March 27, 2014 Los Alamos postdoctoral fellow William Rice holds a crystal of strontium titanate up to the light. This crystal, previously thought to be nonmagnetic, turns out to have surprising magnetic features when treated with special "circularly polarized"

  19. Resistive switching phenomena: A review of statistical physics approaches

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | DOE PAGES Resistive switching phenomena: A review of statistical physics approaches This content will become publicly available on August 31, 2016 « Prev Next » Title: Resistive switching phenomena: A review of statistical physics approaches Authors: Lee, Jae Sung [1] ; Lee, Shinbuhm [2] ; Noh, Tae Won [3] + Show Author Affiliations School of Physics, Korea Institute for Advanced Study, Seoul 130-722, South Korea Materials Science and Technology Division, Oak Ridge

  20. Sub-picosecond optical switching with a negative index metamaterial

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Sub-picosecond optical switching with a negative index metamaterial Citation Details In-Document Search Title: Sub-picosecond optical switching with a negative index metamaterial Development of all-optical signal processing, eliminating the performance and cost penalties of optical-electrical-optical conversion, is important for continu,ing advances in Terabits/sec (Tb/s) communications.' Optical

  1. Understanding and using configurational changes in resistive switching

    Office of Scientific and Technical Information (OSTI)

    filaments. (Conference) | SciTech Connect Understanding and using configurational changes in resistive switching filaments. Citation Details In-Document Search Title: Understanding and using configurational changes in resistive switching filaments. Abstract not provided. Authors: Mickel, Patrick R. ; Lohn, Andrew ; James, Conrad D. ; Marinella, Matthew Publication Date: 2014-02-01 OSTI Identifier: 1140919 Report Number(s): SAND2014-1502C 504910 DOE Contract Number: DE-AC04-94AL85000 Resource

  2. Electronically commutated serial-parallel switching for motor windings

    DOE Patents [OSTI]

    Hsu, John S. (Oak Ridge, TN)

    2012-03-27

    A method and a circuit for controlling an ac machine comprises controlling a full bridge network of commutation switches which are connected between a multiphase voltage source and the phase windings to switch the phase windings between a parallel connection and a series connection while providing commutation discharge paths for electrical current resulting from inductance in the phase windings. This provides extra torque for starting a vehicle from lower battery current.

  3. Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters

    SciTech Connect (OSTI)

    2012-02-13

    Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorms transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directionsmaking the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

  4. Multi-line triggering and interdigitated electrode structure for photoconductive semiconductor switches

    DOE Patents [OSTI]

    Mar, Alan (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM); Loubriel, Guillermo (Albuquerque, NM)

    2007-02-06

    An improved photoconductive semiconductor switch comprises multiple-line optical triggering of multiple, high-current parallel filaments between the switch electrodes. The switch can also have a multi-gap, interdigitated electrode for the generation of additional parallel filaments. Multi-line triggering can increase the switch lifetime at high currents by increasing the number of current filaments and reducing the current density at the contact electrodes in a controlled manner. Furthermore, the improved switch can mitigate the degradation of switching conditions with increased number of firings of the switch.

  5. Nano-optical observation of cascade switching in a parallel superconducting nanowire single photon detector

    SciTech Connect (OSTI)

    Heath, Robert M. Tanner, Michael G.; Casaburi, Alessandro; Hadfield, Robert H.; Webster, Mark G.; San Emeterio Alvarez, Lara; Jiang, Weitao; Barber, Zoe H.; Warburton, Richard J.

    2014-02-10

    The device physics of parallel-wire superconducting nanowire single photon detectors is based on a cascade process. Using nano-optical techniques and a parallel wire device with spatially separate pixels, we explicitly demonstrate the single- and multi-photon triggering regimes. We develop a model for describing efficiency of a detector operating in the arm-trigger regime. We investigate the timing response of the detector when illuminating a single pixel and two pixels. We see a change in the active area of the detector between the two regimes and find the two-pixel trigger regime to have a faster timing response than the one-pixel regime.

  6. Alternative Fuels Data Center: Cities Make the Clean Switch to Natural Gas

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Cities Make the Clean Switch to Natural Gas to someone by E-mail Share Alternative Fuels Data Center: Cities Make the Clean Switch to Natural Gas on Facebook Tweet about Alternative Fuels Data Center: Cities Make the Clean Switch to Natural Gas on Twitter Bookmark Alternative Fuels Data Center: Cities Make the Clean Switch to Natural Gas on Google Bookmark Alternative Fuels Data Center: Cities Make the Clean Switch to Natural Gas on Delicious Rank Alternative Fuels Data Center: Cities Make the

  7. High-G testing of MEMS mechanical non-volatile memory and silicon re-entry

    Office of Scientific and Technical Information (OSTI)

    switch. (Technical Report) | SciTech Connect Technical Report: High-G testing of MEMS mechanical non-volatile memory and silicon re-entry switch. Citation Details In-Document Search Title: High-G testing of MEMS mechanical non-volatile memory and silicon re-entry switch. Two different Sandia MEMS devices have been tested in a high-g environment to determine their performance and survivability. The first test was performed using a drop-table to produce a peak acceleration load of 1792 g's

  8. Evidence of a Percolative Breakdown Mechanism in Tantalum Oxide ReRAM

    Office of Scientific and Technical Information (OSTI)

    Switching. (Journal Article) | SciTech Connect Evidence of a Percolative Breakdown Mechanism in Tantalum Oxide ReRAM Switching. Citation Details In-Document Search Title: Evidence of a Percolative Breakdown Mechanism in Tantalum Oxide ReRAM Switching. Abstract not provided. Authors: Lohn, Andrew ; Mickel, Patrick R. ; Marinella, Matthew Publication Date: 2013-05-01 OSTI Identifier: 1079815 Report Number(s): SAND2013-4095J 453126 DOE Contract Number: AC04-94AL85000 Resource Type: Journal

  9. Ferroelectric opening switches for large-scale pulsed power drivers.

    SciTech Connect (OSTI)

    Brennecka, Geoffrey L.; Rudys, Joseph Matthew; Reed, Kim Warren; Pena, Gary Edward; Tuttle, Bruce Andrew; Glover, Steven Frank

    2009-11-01

    Fast electrical energy storage or Voltage-Driven Technology (VDT) has dominated fast, high-voltage pulsed power systems for the past six decades. Fast magnetic energy storage or Current-Driven Technology (CDT) is characterized by 10,000 X higher energy density than VDT and has a great number of other substantial advantages, but it has all but been neglected for all of these decades. The uniform explanation for neglect of CDT technology is invariably that the industry has never been able to make an effective opening switch, which is essential for the use of CDT. Most approaches to opening switches have involved plasma of one sort or another. On a large scale, gaseous plasmas have been used as a conductor to bridge the switch electrodes that provides an opening function when the current wave front propagates through to the output end of the plasma and fully magnetizes the plasma - this is called a Plasma Opening Switch (POS). Opening can be triggered in a POS using a magnetic field to push the plasma out of the A-K gap - this is called a Magnetically Controlled Plasma Opening Switch (MCPOS). On a small scale, depletion of electron plasmas in semiconductor devices is used to affect opening switch behavior, but these devices are relatively low voltage and low current compared to the hundreds of kilo-volts and tens of kilo-amperes of interest to pulsed power. This work is an investigation into an entirely new approach to opening switch technology that utilizes new materials in new ways. The new materials are Ferroelectrics and using them as an opening switch is a stark contrast to their traditional applications in optics and transducer applications. Emphasis is on use of high performance ferroelectrics with the objective of developing an opening switch that would be suitable for large scale pulsed power applications. Over the course of exploring this new ground, we have discovered new behaviors and properties of these materials that were here to fore unknown. Some of these unexpected discoveries have lead to new research directions to address challenges.

  10. Utilizing zero-sequence switchings for reversible converters

    DOE Patents [OSTI]

    Hsu, John S.; Su, Gui-Jia; Adams, Donald J.; Nagashima, James M.; Stancu, Constantin; Carlson, Douglas S.; Smith, Gregory S.

    2004-12-14

    A method for providing additional dc inputs or outputs (49, 59) from a dc-to-ac inverter (10) for controlling motor loads (60) comprises deriving zero-sequence components (V.sub.ao, V.sub.bo, and V.sub.co) from the inverter (10) through additional circuit branches with power switching devices (23, 44, 46), transforming the voltage between a high voltage and a low voltage using a transformer or motor (42, 50), converting the low voltage between ac and dc using a rectifier (41, 51) or an H-bridge (61), and providing at least one low voltage dc input or output (49, 59). The transformation of the ac voltage may be either single phase or three phase. Where less than a 100% duty cycle is acceptable, a two-phase modulation of the switching signals controlling the inverter (10) reduces switching losses in the inverter (10). A plurality of circuits for carrying out the invention are also disclosed.

  11. Enhancement of Spin-transfer torque switching via resonant tunneling

    SciTech Connect (OSTI)

    Chatterji, Niladri; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

    2014-12-08

    We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.

  12. Ferroelectric Switching by the Grounded Scanning Probe Microscopy Tip

    SciTech Connect (OSTI)

    Ievlev, Anton; Morozovska, A. N.; Shur, Vladimir Ya.; Kalinin, Sergei V

    2015-01-01

    The process of polarization reversal by the tip of scanning probe microscope was intensively studied for last two decades. Number of the abnormal switching phenomena was reported by the scientific groups worldwide. In particularly it was experimentally and theoretically shown that slow dynamics of the surface screening controls kinetics of the ferroelectric switching, backswitching and relaxation and presence of the charges carriers on the sample surface and in the sample bulk significantly change polarization reversal dynamics. Here we experimentally demonstrated practical possibility of the history dependent polarization reversal by the grounded SPM tip. This phenomenon was attributed to induction of the slowly dissipating charges into the surface of the grounded tip that enables polarization reversal under the action of the produced electric field. Analytical and numerical electrostatic calculations allow additional insight into nontrivial abnormal switching phenomena reported earlier.

  13. Spark gap switch system with condensable dielectric gas

    DOE Patents [OSTI]

    Thayer, III, William J. (Kent, WA)

    1991-01-01

    A spark gap switch system is disclosed which is capable of operating at a high pulse rate comprising an insulated switch housing having a purging gas entrance port and a gas exit port, a pair of spaced apart electrodes each having one end thereof within the housing and defining a spark gap therebetween, an easily condensable and preferably low molecular weight insulating gas flowing through the switch housing from the housing, a heat exchanger/condenser for condensing the insulating gas after it exits from the housing, a pump for recirculating the condensed insulating gas as a liquid back to the housing, and a heater exchanger/evaporator to vaporize at least a portion of the condensed insulating gas back into a vapor prior to flowing the insulating gas back into the housing.

  14. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; Kalinin, Sergei V; Lai, Keji; Demkov, Alexander A.

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  15. High voltage switch triggered by a laser-photocathode subsystem

    DOE Patents [OSTI]

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

    2013-01-08

    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  16. Transparent selective illumination means suitable for use in optically activated electrical switches and optically activated electrical switches constructed using same

    DOE Patents [OSTI]

    Wilcox, R.B.

    1991-09-10

    A planar transparent light conducting means and an improved optically activated electrical switch made using the novel light conducting means are disclosed. The light conducting means further comprise light scattering means on one or more opposite planar surfaces thereof to transmit light from the light conducting means into adjacent media and reflective means on other surfaces of the light conducting means not containing the light scattering means. The optically activated electrical switch comprises at least two stacked photoconductive wafers, each having electrodes formed on both surfaces thereof, and separated by the planar transparent light conducting means. The light scattering means on the light conducting means face surfaces of the wafers not covered by the electrodes to transmit light from the light conducting means into the photoconductive wafers to uniformly illuminate and activate the switch. 11 figures.

  17. Transparent selective illumination means suitable for use in optically activated electrical switches and optically activated electrical switches constructed using same

    DOE Patents [OSTI]

    Wilcox, Russell B. (Oakland, CA)

    1991-01-01

    A planar transparent light conducting means and an improved optically activated electrical switch made using the novel light conducting means are disclosed. The light conducting means further comprise light scattering means on one or more opposite planar surfaces thereof to transmit light from the light conducting means into adjacent media and reflective means on other surfaces of the light conducting means not containing the light scattering means. The optically activated electrical switch comprises at least two stacked photoconductive wafers, each having electrodes formed on both surfaces thereof, and separated by the planar transparent light conducting means. The light scattering means on the light conducting means face surfaces of the wafers not covered by the electrodes to transmit light from the light conducting means into the photoconductive wafers to uniformly illuminate and activate the switch.

  18. Optically-initiated silicon carbide high voltage switch

    DOE Patents [OSTI]

    Caporaso, George J. (Livermore, CA); Sampayan, Stephen E. (Manteca, CA); Sullivan, James S. (Livermore, CA); Sanders, David M. (Livermore, CA)

    2012-02-28

    An improved photoconductive switch having a SIC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.

  19. Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities

    DOE Patents [OSTI]

    Harrison; Neil , Singleton; John , Migliori; Albert

    2008-08-05

    A quantum coherent switch having a substrate formed from a density wave (DW) material capable of having a periodic electron density modulation or spin density modulation, a dielectric layer formed onto a surface of the substrate that is orthogonal to an intrinsic wave vector of the DW material; and structure for applying an external spatially periodic electrostatic potential over the dielectric layer.

  20. Utility External Disconnect Switch: Practical, Legal, and Technical Reasons to Eliminate the Requirement

    Broader source: Energy.gov [DOE]

    This report documents the safe operation of PV systems without a utility external disconnect switch in several large jurisdictions. It includes recommendations for regulators contemplating utility external disconnect switch requirements.

  1. Reversible piezomagnetoelectric switching in bulk polycrystalline ceramics

    SciTech Connect (OSTI)

    Stevenson, T. Bennett, J.; Brown, A. P.; Wines, T.; Bell, A. J.; Comyn, T. P.; Smith, R. I.

    2014-08-01

    Magnetoelectric (ME) coupling in materials offer tremendous advantages in device functionality enabling technologies including advanced electronic memory, combining electronic speed, and efficiency with magnetic robustness. However, low cost polycrystalline ME materials are excluded from most commercial applications, operating only at cryogenic temperatures, impractically large electric/magnetic fields, or with low ME coefficients (1-100 mV/cm Oe). Despite this, the technological potential of single compound ME coupling has continued to drive research into multiferroics over the last two decades. Here we show that by manipulating the large induced atomic strain within the polycrystalline, room temperature multiferroic compound 0.7BiFeO{sub 3}–0.3PbTiO{sub 3}, we can induce a reversible, piezoelectric strain controlled ME effect. Employing an in situ neutron diffraction experiment, we have demonstrated that this piezomagnetoelectric effect manifests with an applied electric field >8 kV/mm at the onset of piezoelectric strain, engineered in to the compound by crystallographic phase mixing. This produces a remarkable intrinsic ME coefficient of 1276 mV/cm Oe, due to a strain driven modification to the oxygen sub-lattice, inducing an increase in magnetic moment per Fe{sup 3+} ion of +0.142 μ{sub B}. This work provides a framework for investigations into strain engineered nanostructures to realize low-cost ME devices designed from the atoms up, as well as contributing to the deeper understanding of single phase ME coupling mechanisms.

  2. The effects of mobile ATM switches on PNNI peer group operation

    SciTech Connect (OSTI)

    Martinez, L.; Sholander, P.; Tolendino, L.

    1997-04-01

    This contribution discusses why, and how, mobile networks and mobile switches might be discussed during Phase 1 of the WATM standards process. Next, it reviews mobile routers within Mobile IP. That IP mobility architecture may not apply to the proposed mobile ATM switches. Finally, it discusses problems with PNNI peer group formation and operation when mobile ATM switches are present.

  3. High optical and switching performance electrochromic devices based on a zinc oxide nanowire with poly(methyl methacrylate) gel electrolytes

    SciTech Connect (OSTI)

    Chun, Young Tea; Chu, Daping; Neeves, Matthew; Placido, Frank; Smithwick, Quinn

    2014-11-10

    High performance electrochromic devices have been fabricated and demonstrated utilizing a solid polymer electrolyte and zinc oxide (ZnO) nanowire (NW) array counter electrode. The poly(methyl methacrylate) based polymer electrolyte was spin coated upon hydrothermally grown ZnO NW array counter electrodes, while electron beam evaporated NiO{sub x} thin films formed the working electrodes. Excellent optical contrast and switching speeds were observed in the fabricated devices with active areas of 2?cm{sup 2}, exhibiting an optical contrast of 73.11% at the wavelength of 470?nm, combined with a fast switching time of 0.2 s and 0.4 s for bleaching and coloration, respectively.

  4. Spectrographic temperature measurement of a high power breakdown arc in a high pressure gas switch

    SciTech Connect (OSTI)

    Yeckel, Christopher; Curry, Randy

    2011-09-15

    A procedure for obtaining an approximate temperature value of conducting plasma generated during self-break closure of a RIMFIRE gas switch is described. The plasma is in the form of a breakdown arc which conducts approximately 12 kJ of energy in 1 {mu}s. A spectrographic analysis of the trigger-section of the 6-MV RIMFIRE laser triggered gas switch used in Sandia National Laboratory's ''Z-Machine'' has been made. It is assumed that the breakdown plasma has sufficiently approached local thermodynamic equilibrium allowing a black-body temperature model to be applied. This model allows the plasma temperature and radiated power to be approximated. The gas dielectric used in these tests was pressurized SF{sub 6}. The electrode gap is set at 4.59 cm for each test. The electrode material is stainless steel and insulator material is poly(methyl methacrylate). A spectrum range from 220 to 550 nanometers has been observed and calibrated using two spectral irradiance lamps and three spectrograph gratings. The approximate plasma temperature is reported.

  5. Spin-transfer switching of orthogonal spin-valve devices at cryogenic temperatures

    SciTech Connect (OSTI)

    Ye, L. Gopman, D. B.; Rehm, L.; Backes, D.; Wolf, G.; Kent, A. D.; Ohki, T.; Kirichenko, A. F.; Vernik, I. V.; Mukhanov, O. A.

    2014-05-07

    We present the quasi-static and dynamic switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at cryogenic temperatures. Switching at 12?K between parallel and anti-parallel spin-valve states is investigated for slowly varied current as well as for current pulses with durations as short as 200 ps. We demonstrate 100% switching probability with current pulses 0.6?ns in duration. We also present a switching probability diagram that summarizes device switching operation under a variety of pulse durations, amplitudes, and polarities.

  6. Electro-optical switching and memory display device

    DOE Patents [OSTI]

    Skotheim, Terje A. (East Patchogue, NY); O'Grady, William E. (Center Moriches, NY); Linkous, Clovis A. (Stony Brook, NY)

    1986-01-01

    An electro-optical display device having a housing with wall means including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuit means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

  7. Electro-optical switching and memory display device

    DOE Patents [OSTI]

    Skotheim, T.A.; O'Grady, W.E.; Linkous, C.A.

    1983-12-29

    An electro-optical display device having a housing with wall means including one transparent wall and at least one other wall. Counter electrodes are positioned on the transparent wall and display electrodes are positioned on the other wall with both electrodes in electrically conductive relationship with an electrolyte. Circuits means are connected to the display and counter electrodes to apply different predetermined control potentials between them. The display electrodes are covered with a thin electrically conductive polymer film that is characterized according to the invention by having embedded in it pigment molecules as counter ions. The display device is operable to be switched to a plurality of different visual color states at an exceptionally rapid switching rate while each of the color states is characterized by possessing good color intensity and definition.

  8. Plasma Switch for High-Power Active Pulse Compressor

    SciTech Connect (OSTI)

    Hirshfield, Jay L.

    2013-11-04

    Results are presented from experiments carried out at the Naval Research Laboratory X-band magnicon facility on a two-channel X-band active RF pulse compressor that employed plasma switches. Experimental evidence is shown to validate the basic goals of the project, which include: simultaneous firing of plasma switches in both channels of the RF circuit, operation of quasi-optical 3-dB hybrid directional coupler coherent superposition of RF compressed pulses from both channels, and operation of the X-band magnicon directly in the RF pulse compressor. For incident 1.2 ?s pulses in the range 0.63 ? 1.35 MW, compressed pulses of peak powers 5.7 ? 11.3 MW were obtained, corresponding to peak power gain ratios of 8.3 ? 9.3. Insufficient bakeout and conditioning of the high-power RF circuit prevented experiments from being conducted at higher RF input power levels.

  9. Combustion mode switching with a turbocharged/supercharged engine

    DOE Patents [OSTI]

    Mond, Alan; Jiang, Li

    2015-09-22

    A method for switching between low- and high-dilution combustion modes in an internal combustion engine having an intake passage with an exhaust-driven turbocharger, a crankshaft-driven positive displacement supercharger downstream of the turbocharger and having variable boost controllable with a supercharger bypass valve, and a throttle valve downstream of the supercharger. The current combustion mode and mass air flow are determined. A switch to the target combustion mode is commanded when an operating condition falls within a range of predetermined operating conditions. A target mass air flow to achieve a target air-fuel ratio corresponding to the current operating condition and the target combustion mode is determined. The degree of opening of the supercharger bypass valve and the throttle valve are controlled to achieve the target mass air flow. The amount of residual exhaust gas is manipulated.

  10. Vacuum-surface flashover switch with cantilever conductors

    DOE Patents [OSTI]

    Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

    2001-01-01

    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  11. Device having two optical ports for switching applications

    DOE Patents [OSTI]

    Rosen, Ayre (Cherry Hill, NJ); Stabile, Paul J. (Langehorne, PA)

    1991-09-24

    A two-sided light-activatable semiconductor switch device having an optical port on each side thereof. The semiconductor device may be a p-i-n diode or of bulk intrinsic material. A two ported p-i-n diode, reverse-biased to "off" by a 1.3 kV dc power supply, conducted 192 A when activated by two 1 kW laser diode arrays, one for each optical port.

  12. Reversible Switching from Antiferro- to Ferromagnetic Behavior by

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solvent-Mediated, Thermally-Induced Phase Transitions in a Trimorphic MOF-Based Magnetic Sponge System | Center for Gas SeparationsRelevant to Clean Energy Technologies | Blandine Jerome Reversible Switching from Antiferro- to Ferromagnetic Behavior by Solvent-Mediated, Thermally-Induced Phase Transitions in a Trimorphic MOF-Based Magnetic Sponge System Previous Next List Mario Wriedt, Andrey A. Yakovenko, Gregory J. Halder, Andrey V. Prosvirin, Kim R. Dunbar, and Hong-Cai Zhou, J. Am. Chem.

  13. Microwave pulse compression from a storage cavity with laser-induced switching

    DOE Patents [OSTI]

    Bolton, Paul R. (Menlo Park, CA)

    1992-01-01

    A laser-induced switch and a multiple cavity configuration are disclosed for producing high power microwave pulses. The microwave pulses are well controlled in wavelength and timing, with a quick rise time and a variable shape and power of the pulse. In addition, a method of reducing pre-pulse leakage to a low level is disclosed. Microwave energy is directed coherently to one or more cavities that stores the energy in a single mode, represented as a standing wave pattern. In order to switch the stored microwave energy out of the main cavity and into the branch waveguide, a laser-actuated switch is provided for the cavity. The switch includes a laser, associated optics for delivering the beam into the main cavity, and a switching gas positioned at an antinode in the main cavity. When actuated, the switching gas ionizes, creating a plasma, which becomes reflective to the microwave energy, changing the resonance of the cavity, and as a result the stored microwave energy is abruptly switched out of the cavity. The laser may directly pre-ionize the switching gas, or it may pump an impurity in the switching gas to an energy level which switches when a pre-selected cavity field is attained. Timing of switching the cavities is controlled by varying the pathlength of the actuating laser beam. For example, the pathlengths may be adjusted to output a single pulse of high power, or a series of quick lower power pulses.

  14. The Usefulness of Bi-Level Switching; Original Technical Note: November 1998. Revised August, 1999

    SciTech Connect (OSTI)

    Building Technologies Department

    1998-11-01

    California's Title 24 Energy Efficiency Building Standard requires multiple lighting level control in all individual offices. Usually, this requirement is fulfilled using bi-level switching. With bi-level switching, each office occupant is provided with two wall switches near the doorway to control their lights. In a typical installation, one switch would control 1/3 of the fluorescent lamps in the ceiling lighting system, while the other switch would control the remaining 2/3 of the lamps. This allows four possible light levels: OFF, 1/3, 2/3 and FULL lighting. Because it has been required by building code since 1983, bi-level switching is common in California office buildings. However, there is no published evidence showing that occupants sometimes use just one switch rather than just switching on both switches when entering the room. Consequently, some have questioned whether bi-level switching is a necessary or desirable requirement for typical office buildings. In fact, the draft national standard, ASHRAE Standard 90.1-1989K apparently does not require bi-level switching at all.

  15. Interprocessor bus switching system for simultaneous communication in plural bus parallel processing system

    DOE Patents [OSTI]

    Atac, Robert (Aurora, IL); Fischler, Mark S. (Warrenville, IL); Husby, Donald E. (DeKalb, IL)

    1991-01-01

    A bus switching apparatus and method for multiple processor computer systems comprises a plurality of bus switches interconnected by branch buses. Each processor or other module of the system is connected to a spigot of a bus switch. Each bus switch also serves as part of a backplane of a modular crate hardware package. A processor initiates communication with another processor by identifying that other processor. The bus switch to which the initiating processor is connected identifies and secures, if possible, a path to that other processor, either directly or via one or more other bus switches which operate similarly. If a particular desired path through a given bus switch is not available to be used, an alternate path is considered, identified and secured.

  16. Interprocessor bus switching system for simultaneous communication in plural bus parallel processing system

    DOE Patents [OSTI]

    Atac, R.; Fischler, M.S.; Husby, D.E.

    1991-01-15

    A bus switching apparatus and method for multiple processor computer systems comprises a plurality of bus switches interconnected by branch buses. Each processor or other module of the system is connected to a spigot of a bus switch. Each bus switch also serves as part of a backplane of a modular crate hardware package. A processor initiates communication with another processor by identifying that other processor. The bus switch to which the initiating processor is connected identifies and secures, if possible, a path to that other processor, either directly or via one or more other bus switches which operate similarly. If a particular desired path through a given bus switch is not available to be used, an alternate path is considered, identified and secured. 11 figures.

  17. Methods for batch fabrication of cold cathode vacuum switch tubes

    DOE Patents [OSTI]

    Walker, Charles A. (Albuquerque, NM); Trowbridge, Frank R. (Albuquerque, NM)

    2011-05-10

    Methods are disclosed for batch fabrication of vacuum switch tubes that reduce manufacturing costs and improve tube to tube uniformity. The disclosed methods comprise creating a stacked assembly of layers containing a plurality of adjacently spaced switch tube sub-assemblies aligned and registered through common layers. The layers include trigger electrode layer, cathode layer including a metallic support/contact with graphite cathode inserts, trigger probe sub-assembly layer, ceramic (e.g. tube body) insulator layer, and metallic anode sub-assembly layer. Braze alloy layers are incorporated into the stacked assembly of layers, and can include active metal braze alloys or direct braze alloys, to eliminate costs associated with traditional metallization of the ceramic insulator layers. The entire stacked assembly is then heated to braze/join/bond the stack-up into a cohesive body, after which individual switch tubes are singulated by methods such as sawing. The inventive methods provide for simultaneously fabricating a plurality of devices as opposed to traditional methods that rely on skilled craftsman to essentially hand build individual devices.

  18. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; et al

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

  19. Active high-power RF switch and pulse compression system

    DOE Patents [OSTI]

    Tantawi, Sami G. (San Mateo, CA); Ruth, Ronald D. (Woodside, CA); Zolotorev, Max (Mountain View, CA)

    1998-01-01

    A high-power RF switching device employs a semiconductor wafer positioned in the third port of a three-port RF device. A controllable source of directed energy, such as a suitable laser or electron beam, is aimed at the semiconductor material. When the source is turned on, the energy incident on the wafer induces an electron-hole plasma layer on the wafer, changing the wafer's dielectric constant, turning the third port into a termination for incident RF signals, and. causing all incident RF signals to be reflected from the surface of the wafer. The propagation constant of RF signals through port 3, therefore, can be changed by controlling the beam. By making the RF coupling to the third port as small as necessary, one can reduce the peak electric field on the unexcited silicon surface for any level of input power from port 1, thereby reducing risk of damaging the wafer by RF with high peak power. The switch is useful to the construction of an improved pulse compression system to boost the peak power of microwave tubes driving linear accelerators. In this application, the high-power RF switch is placed at the coupling iris between the charging waveguide and the resonant storage line of a pulse compression system. This optically controlled high power RF pulse compression system can handle hundreds of Megawatts of power at X-band.

  20. Mechanical memory

    DOE Patents [OSTI]

    Gilkey, Jeffrey C.; Duesterhaus, Michelle A.; Peter, Frank J.; Renn, Rosemarie A.; Baker, Michael S.

    2006-08-15

    A first-in-first-out (FIFO) microelectromechanical memory apparatus (also termed a mechanical memory) is disclosed. The mechanical memory utilizes a plurality of memory cells, with each memory cell having a beam which can be bowed in either of two directions of curvature to indicate two different logic states for that memory cell. The memory cells can be arranged around a wheel which operates as a clocking actuator to serially shift data from one memory cell to the next. The mechanical memory can be formed using conventional surface micromachining, and can be formed as either a nonvolatile memory or as a volatile memory.

  1. Mechanical memory

    DOE Patents [OSTI]

    Gilkey, Jeffrey C.; Duesterhaus, Michelle A.; Peter, Frank J.; Renn, Rosemarie A.; Baker, Michael S.

    2006-05-16

    A first-in-first-out (FIFO) microelectromechanical memory apparatus (also termed a mechanical memory) is disclosed. The mechanical memory utilizes a plurality of memory cells, with each memory cell having a beam which can be bowed in either of two directions of curvature to indicate two different logic states for that memory cell. The memory cells can be arranged around a wheel which operates as a clocking actuator to serially shift data from one memory cell to the next. The mechanical memory can be formed using conventional surface micromachining, and can be formed as either a nonvolatile memory or as a volatile memory.

  2. Agreement Mechanisms

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Agreement Mechanisms Agreement Mechanisms World-class experts and capabilities countering all aspects of explosive threats, and aiming predominantly at enhanced detection capabilities. CRADA: Cooperative Research and Development Agreement What is it? Work performed in collaboration with a sponsor. What does it do? Enables Los Alamos staff to participate with industry, academia, and nonprofit entities on collaborative R&D activities of mutual benefit. When is it used? An organization's

  3. High-Power Plasma Switch for 11.4 GHz Microwave Pulse Compressor

    SciTech Connect (OSTI)

    Jay L. Hirshfield

    2010-03-04

    Results obtained in several experiments on active RF pulse compression at X-band using a magnicon as the high-power RF source are presented. In these experiments, microwave energy was stored in high-Q TE01 and TE02 modes of two parallel-fed resonators, and then discharged using switches activated with rapidly fired plasma discharge tubes. Designs and high-power tests of several versions of the compressor are described. In these experiments, coherent pulse superposition was demonstrated at a 59 MW level of incident power. The compressed pulses observed had powers of 5070 MW and durations of 4070 ns. Peak power gains were measured to be in the range of 7:111:1 with efficiency in the range of 5063%.

  4. Aided by Simulations, Scientists Observe Atomic Collapse State

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Collapse State Observed Aided by Simulations, Scientists Observe Atomic Collapse State Quantum Mechanics Prediction Confirmed in Graphene Using NERSC's Hopper April 26, 2013...

  5. Observation of Ordered Structures in Counterion Layers near Wet...

    Office of Scientific and Technical Information (OSTI)

    Observation of Ordered Structures in Counterion Layers near Wet Charged Surfaces: A Potential Mechanism for Charge Inversion Citation Details In-Document Search Title: Observation ...

  6. Computational mechanics

    SciTech Connect (OSTI)

    Goudreau, G.L.

    1993-03-01

    The Computational Mechanics thrust area sponsors research into the underlying solid, structural and fluid mechanics and heat transfer necessary for the development of state-of-the-art general purpose computational software. The scale of computational capability spans office workstations, departmental computer servers, and Cray-class supercomputers. The DYNA, NIKE, and TOPAZ codes have achieved world fame through our broad collaborators program, in addition to their strong support of on-going Lawrence Livermore National Laboratory (LLNL) programs. Several technology transfer initiatives have been based on these established codes, teaming LLNL analysts and researchers with counterparts in industry, extending code capability to specific industrial interests of casting, metalforming, and automobile crash dynamics. The next-generation solid/structural mechanics code, ParaDyn, is targeted toward massively parallel computers, which will extend performance from gigaflop to teraflop power. Our work for FY-92 is described in the following eight articles: (1) Solution Strategies: New Approaches for Strongly Nonlinear Quasistatic Problems Using DYNA3D; (2) Enhanced Enforcement of Mechanical Contact: The Method of Augmented Lagrangians; (3) ParaDyn: New Generation Solid/Structural Mechanics Codes for Massively Parallel Processors; (4) Composite Damage Modeling; (5) HYDRA: A Parallel/Vector Flow Solver for Three-Dimensional, Transient, Incompressible Viscous How; (6) Development and Testing of the TRIM3D Radiation Heat Transfer Code; (7) A Methodology for Calculating the Seismic Response of Critical Structures; and (8) Reinforced Concrete Damage Modeling.

  7. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

    SciTech Connect (OSTI)

    Jiang, Xiaofan; Ma, Zhongyuan Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-09-28

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  8. Computational mechanics

    SciTech Connect (OSTI)

    Raboin, P J

    1998-01-01

    The Computational Mechanics thrust area is a vital and growing facet of the Mechanical Engineering Department at Lawrence Livermore National Laboratory (LLNL). This work supports the development of computational analysis tools in the areas of structural mechanics and heat transfer. Over 75 analysts depend on thrust area-supported software running on a variety of computing platforms to meet the demands of LLNL programs. Interactions with the Department of Defense (DOD) High Performance Computing and Modernization Program and the Defense Special Weapons Agency are of special importance as they support our ParaDyn project in its development of new parallel capabilities for DYNA3D. Working with DOD customers has been invaluable to driving this technology in directions mutually beneficial to the Department of Energy. Other projects associated with the Computational Mechanics thrust area include work with the Partnership for a New Generation Vehicle (PNGV) for ''Springback Predictability'' and with the Federal Aviation Administration (FAA) for the ''Development of Methodologies for Evaluating Containment and Mitigation of Uncontained Engine Debris.'' In this report for FY-97, there are five articles detailing three code development activities and two projects that synthesized new code capabilities with new analytic research in damage/failure and biomechanics. The article this year are: (1) Energy- and Momentum-Conserving Rigid-Body Contact for NIKE3D and DYNA3D; (2) Computational Modeling of Prosthetics: A New Approach to Implant Design; (3) Characterization of Laser-Induced Mechanical Failure Damage of Optical Components; (4) Parallel Algorithm Research for Solid Mechanics Applications Using Finite Element Analysis; and (5) An Accurate One-Step Elasto-Plasticity Algorithm for Shell Elements in DYNA3D.

  9. Route to polarization switching induced by optical injection in vertical-cavity surface-emitting lasers

    SciTech Connect (OSTI)

    Sciamanna, M.; Panajotov, K.

    2006-02-15

    We perform a theoretical investigation of the polarization dynamics in a vertical-cavity surface-emitting laser (VCSEL) subject to orthogonal optical injection, i.e., the injected field has a linear polarization (LP) orthogonal to that of the free-running VCSEL. In agreement with previous experiments [Z. G. Pan et al., Appl. Phys. Lett. 63, 2999 (1993)], an increase of the injection strength may lead to a polarization switching accompanied by an injection locking. We find that this route to polarization switching is typically accompanied by a cascade of bifurcations to wave-mixing dynamics and time-periodic and possibly chaotic regimes. A detailed mapping of the polarization dynamics in the plane of the injection parameters (detuning, injection strength) unveils a large richness of dynamical scenarios. Of particular interest is the existence of another injection-locked solution for which the two LP modes both lock to the master laser frequency, i.e., an elliptically polarized injection-locked (EPIL) steady state. Modern continuation techniques allow us to unveil an unfolding mechanism of the EPIL solution as the detuning varies and also to link the existence of the EPIL solution to a resonance condition between the master laser frequency and the free-running frequency of the normally depressed LP mode in the slave laser. We furthermore report an additional case of bistability, in which the EPIL solution may coexist with the second injection-locked solution (the one being locked to the master polarization). This case of bistability is a result of the interaction between optical injection and the two-polarization-mode characteristics of VCSEL devices.

  10. Single-ion adsorption and switching in carbon nanotubes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bushmaker, Adam W.; Oklejas, Vanessa; Walker, Don; Hopkins, Alan R.; Chen, Jihan; Cronin, Stephen B.

    2016-01-25

    Single-ion detection has, for many years, been the domain of large devices such as the Geiger counter, and studies on interactions of ionized gasses with materials have been limited to large systems. To date, there have been no reports on single gaseous ion interaction with microelectronic devices, and single neutral atom detection techniques have shown only small, barely detectable responses. Here we report the observation of single gaseous ion adsorption on individual carbon nanotubes (CNTs), which, because of the severely restricted one-dimensional current path, experience discrete, quantized resistance increases of over two orders of magnitude. Only positive ions cause changes,more » by the mechanism of ion potentialinduced carrier depletion, which is supported by density functional and Landauer transport theory. Lastly, our observations reveal a new single-ion/CNT heterostructure with novel electronic properties, and demonstrate that as electronics are ultimately scaled towards the one-dimensional limit, atomic-scale effects become increasingly important.« less

  11. Prediction of Acoustic Noise in Switched Reluctance Motor Drives

    SciTech Connect (OSTI)

    Lin, CJ; Fahimi, B

    2014-03-01

    Prediction of acoustic noise distribution generated by electric machines has become an integral part of design and control in noise sensitive applications. This paper presents a fast and precise acoustic noise imaging technique for switched reluctance machines (SRMs). This method is based on distribution of radial vibration in the stator frame of the SRM. Radial vibration of the stator frame, at a network of probing points, is computed using input phase current and phase voltage waveforms. Sequentially, the acceleration of the probing network will be expanded to predict full acceleration on the stator frame surface, using which acoustic noise emission caused by the stator can be calculated using the boundary element method.

  12. Klystron switching power supplies for the Internation Linear Collider

    SciTech Connect (OSTI)

    Fraioli, Andrea; /Cassino U. /INFN, Pisa

    2009-12-01

    The International Linear Collider is a majestic High Energy Physics particle accelerator that will give physicists a new cosmic doorway to explore energy regimes beyond the reach of today's accelerators. ILC will complement the Large Hadron Collider (LHC), a proton-proton collider at the European Center for Nuclear Research (CERN) in Geneva, Switzerland, by producing electron-positron collisions at center of mass energy of about 500 GeV. In particular, the subject of this dissertation is the R&D for a solid state Marx Modulator and relative switching power supply for the International Linear Collider Main LINAC Radio Frequency stations.

  13. The design and analysis of multi-megawatt distributed single pole double throw (SPDT) microwave switches

    SciTech Connect (OSTI)

    Tantawi, S.G. [Stanford Linear Accelerator Center, SLAC, 2575 Sand Hill Rd. Menlo Park, California 94025 (United States)

    1999-05-01

    We present design methodology and analysis for an SPDT switch that is capable of handling hundreds of megawatts of power at X-band. The switch is designed for application in high power rf systems in particular future Linear Colliders (1). In these systems switching need to be fast in one direction only. We use this to our advantage to reach a design for a super high power switch. In our analysis we treat the problem from an abstract point of view. We introduce a unified analysis for the microwave circuits irrespective of the switching elements. The analysis is, then, suitable for different kinds of switching elements such as photoconductrs. PIN diodes, and plasma discharge in low-pressure gases. {copyright} {ital 1999 American Institute of Physics.}

  14. Analysis of reliable sub-ns spin-torque switching under transverse bias magnetic fields

    SciTech Connect (OSTI)

    D'Aquino, M.; Perna, S.; Serpico, C.; Bertotti, G.; Mayergoyz, I. D.

    2015-05-07

    The switching process of a magnetic spin-valve nanosystem subject to spin-polarized current pulses is considered. The dependence of the switching probability on the current pulse duration is investigated. The further application of a transverse field along the intermediate anisotropy axis of the particle is used to control the quasi-random relaxation of magnetization to the reversed magnetization state. The critical current amplitudes to realize the switching are determined by studying the phase portrait of the Landau-Lifshtz-Slonczewski dynamics. Macrospin numerical simulations are in good agreement with the theoretical prediction and demonstrate reliable switching even for very short (below 100 ps) current pulses.

  15. Next-gen RF MEMS Switch for a Smarter, Faster Internet of Things...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    RF MEMS Switch for a Smarter, Faster Internet of Things Karen Lightman 2014.03.28 Big Data. Internet of Things. Quantified Self. Connected Home. Connected City. These...

  16. Ionic switch controls the DNA state in phage λ

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Dong; Liu, Ting; Zuo, Xiaobing; Li, Tao; Qiu, Xiangyun; Evilevitch, Alex

    2015-06-19

    We have recently found that DNA packaged in phage λ undergoes a disordering transition triggered by temperature, which results in increased genome mobility. This solid-to-fluid like DNA transition markedly increases the number of infectious λ particles facilitating infection. However, the structural transition strongly depends on temperature and ionic conditions in the surrounding medium. Using titration microcalorimetry combined with solution X-ray scattering, we mapped both energetic and structural changes associated with transition of the encapsidated λ-DNA. Packaged DNA needs to reach a critical stress level in order for transition to occur. We varied the stress on DNA in the capsid bymore » changing the temperature, packaged DNA length and ionic conditions. We found striking evidence that the intracapsid DNA transition is ‘switched on’ at the ionic conditions mimicking those in vivo and also at the physiologic temperature of infection at 37°C. This ion regulated on-off switch of packaged DNA mobility in turn affects viral replication. The results suggest a remarkable adaptation of phage λ to the environment of its host bacteria in the human gut. The metastable DNA state in the capsid provides a new paradigm for the physical evolution of viruses.« less

  17. Multi-jump magnetic switching in ion-beam sputtered amorphous Co{sub 20}Fe{sub 60}B{sub 20} thin films

    SciTech Connect (OSTI)

    Raju, M.; Chaudhary, Sujeet; Pandya, D. K.

    2013-08-07

    Unconventional multi-jump magnetization reversal and significant in-plane uniaxial magnetic anisotropy (UMA) in the ion-beam sputtered amorphous Co{sub 20}Fe{sub 60}B{sub 20}(5–75 nm) thin films grown on Si/amorphous SiO{sub 2} are reported. While such multi-jump behavior is observed in CoFeB(10 nm) film when the magnetic field is applied at 10°–20° away from the easy-axis, the same is observed in CoFeB(12.5 nm) film when the magnetic field is 45°–55° away from easy-axis. Unlike the previous reports of multi-jump switching in epitaxial films, their observance in the present case of amorphous CoFeB is remarkable. This multi-jump switching is found to disappear when the films are crystallized by annealing at 420 °C. The deposition geometry and the energy of the sputtered species appear to intrinsically induce a kind of bond orientation anisotropy in the films, which leads to the UMA in the as-grown amorphous CoFeB films. Exploitation of such multi-jump switching in amorphous CoFeB thin films could be of technological significance because of their applications in spintronic devices.

  18. The Finite Horizon Optimal Multi-Modes Switching Problem: The Viscosity Solution Approach

    SciTech Connect (OSTI)

    El Asri, Brahim Hamadene, Said

    2009-10-15

    In this paper we show existence and uniqueness of a solution for a system of m variational partial differential inequalities with inter-connected obstacles. This system is the deterministic version of the Verification Theorem of the Markovian optimal m-states switching problem. The switching cost functions are arbitrary. This problem is in relation with the valuation of firms in a financial market.

  19. Integration of planar transformer and/or planar inductor with power switches in power converter

    DOE Patents [OSTI]

    Chen, Kanghua (Canton, MI); Ahmed, Sayeed (Canton, MI); Zhu, Lizhi (Canton, MI)

    2007-10-30

    A power converter integrates at least one planar transformer comprising a multi-layer transformer substrate and/or at least one planar inductor comprising a multi-layer inductor substrate with a number of power semiconductor switches physically and thermally coupled to a heat sink via one or more multi-layer switch substrates.

  20. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, Daniel W.; Lange, Arnold C.

    1996-01-01

    A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  1. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1996-10-15

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

  2. High gain photoconductive semiconductor switch having tailored doping profile zones

    DOE Patents [OSTI]

    Baca, Albert G. (Albuquerque, NM); Loubriel, Guillermo M. (Albuquerque, NM); Mar, Alan (Albuquerque, NM); Zutavern, Fred J (Albuquerque, NM); Hjalmarson, Harold P. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Zipperian, Thomas E. (Edgewood, NM); O'Malley, Martin W. (Edgewood, NM); Helgeson, Wesley D. (Albuquerque, NM); Denison, Gary J. (Sandia Park, NM); Brown, Darwin J. (Albuquerque, NM); Sullivan, Charles T. (Albuquerque, NM); Hou, Hong Q. (Albuquerque, NM)

    2001-01-01

    A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.

  3. Spin switches for compact implementation of neuron and synapse

    SciTech Connect (OSTI)

    Quang Diep, Vinh Sutton, Brian; Datta, Supriyo; Behin-Aein, Behtash

    2014-06-02

    Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert equations, one for each magnet in the network.

  4. Fast deterministic switching in orthogonal spin torque devices via the control of the relative spin polarizations

    SciTech Connect (OSTI)

    Park, Junbo; Buhrman, R. A.; Ralph, D. C.; Kavli Institute at Cornell, Ithaca, New York 14853

    2013-12-16

    We model 100 ps pulse switching dynamics of orthogonal spin transfer (OST) devices that employ an out-of-plane polarizer and an in-plane polarizer. Simulation results indicate that increasing the spin polarization ratio, C{sub P}?=?P{sub IPP}/P{sub OPP}, results in deterministic switching of the free layer without over-rotation (360 rotation). By using spin torque asymmetry to realize an enhanced effective P{sub IPP}, we experimentally demonstrate this behavior in OST devices in parallel to anti-parallel switching. Modeling predicts that decreasing the effective demagnetization field can substantially reduce the minimum C{sub P} required to attain deterministic switching, while retaining low critical switching current, I{sub p}???500??A.

  5. Nonlinear space charge dynamics in mixed ionic-electronic conductors: Resistive switching and ferroelectric-like hysteresis of electromechanical response

    SciTech Connect (OSTI)

    Morozovska, Anna N.; Morozovsky, Nicholas V.; Eliseev, Eugene A.; Varenyk, Olexandr V.; Kim, Yunseok; Strelcov, Evgheni; Tselev, Alexander; Kalinin, Sergei V.

    2014-08-14

    We performed self-consistent modelling of nonlinear electrotransport and electromechanical response of thin films of mixed ionic-electronic conductors (MIEC) allowing for steric effects of mobile charged defects (ions, protons, or vacancies), electron degeneration, and Vegard stresses. We establish correlations between the features of the nonlinear space-charge dynamics, current-voltage, and bending-voltage curves for different types of the film electrodes. A pronounced ferroelectric-like hysteresis of the bending-voltage loops and current maxima on the double hysteresis current-voltage loops appear for the electron-transport electrodes. The double hysteresis loop with pronounced humps indicates a memristor-type resistive switching. The switching occurs due to the strong nonlinear coupling between the electronic and ionic subsystems. A sharp meta-stable maximum of the electron density appears near one open electrode and moves to another one during the periodic change of applied voltage. Our results can explain the nonlinear nature and correlation of electrical and mechanical memory effects in thin MIEC films. The analytical expression proving that the electrically induced bending of MIEC films can be detected by interferometric methods is derived.

  6. Modeling Combustion Control for High Power Diesel Mode Switching...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications Diesel Injection Shear-Stress Advanced Nozzle (DISSAN) In-Cylinder Mechanisms of PCI Heat-Release Rate Control by Fuel Reactivity Stratification Urea...

  7. Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

    SciTech Connect (OSTI)

    Ievlev, Anton; Morozovska, A. N.; Eliseev, E. A.; Shur, Vladimir Ya.; Kalinin, Sergei V

    2014-01-01

    Electric field induced polarization switching underpins most functional applications of ferroelectric materials in information technology, materials science, and optoelectronics. In the last 20 years, much attention has been focused on the switching of individual domains using scanning probe microscopy, both as model of ferroelectric data storage and approach to explore fundamental physics of ferroelectric switching. The classical picture of tip induced switching includes formation of cylindrical domain oriented along the tip field, with the domain size is largely determined by the tip-induced field distribution and domain wall motion kinetics. The polarization screening is recognized as a necessary precondition to the stability of ferroelectric phase; however, screening processes are generally considered to be uniformly efficient and not leading to changes in switching behavior. Here, we demonstrate that single-point tip-induced polarization switching can give rise to a surprisingly broad range of domain morphologies, including radial and angular instabilities. These behaviors are traced to the surface screening charge dynamics, which in some cases can even give rise to anomalous switching against the electric field (ionic field effect). The implications of these behaviors for ferroelectric materials and devices are discussed.

  8. Size dependence of magnetization switching and its dispersion of Co/Pt nanodots under the assistance of radio frequency fields

    SciTech Connect (OSTI)

    Furuta, Masaki Okamoto, Satoshi; Kikuchi, Nobuaki; Kitakami, Osamu; Shimatsu, Takehito

    2014-04-07

    We have studied the dot size dependence of microwave assisted magnetization switching (MAS) on perpendicular magnetic Co/Pt multilayer dot array. The significant microwave assistance effect has been observed over the entire dot size D ranging from 50?nm to 330?nm examined in the present study. The MAS behavior, however, critically depends on D. The excitation frequency dependence of the switching field is well consistent with the spin wave theory, indicating that the magnetization precession in MAS is in accordance with the well defined eigenmodes depending on the dot diameter. The lowest order spin wave is only excited for D???100?nm, and then the MAS effect is well consistent with that of the single macrospin prediction. On the other hand, higher order spin waves are excited for D?>?100?nm, giving rise to the significant enhancement of the MAS effect. The dispersion of MAS effect also depends on D and is significantly reduced for the region of D?>?100?nm. This significant reduction of the dispersion is attributed to the essential feature of the MAS effect which is insensitive to the local fluctuation of anisotropy field, such as defect, damaged layer, and so on.

  9. Effects of graphene on electro-optic switching and spontaneous polarization of a ferroelectric liquid crystal

    SciTech Connect (OSTI)

    Basu, Rajratan, E-mail: basu@usna.edu [Department of Physics, Soft-matter and Nanomaterials Laboratory, The United States Naval Academy, Annapolis, Maryland 21402 (United States)

    2014-09-15

    A small quantity of graphene flakes was doped in a ferroelectric liquid crystal (FLC), and the field-induced ferroelectric electro-optic switching was found to be significantly faster in the FLC + graphene hybrid than that of the pure FLC. Further studies revealed that the suspended graphene flakes enhanced the FLC's spontaneous polarization by improving smectic-C ordering resulting from the ?? electron stacking, and reduced rotation viscosity by trapping some of the free ions of the FLC media. These effects coherently impacted the FLC-switching phenomenon, enabling the FLC molecules to switch faster on reversing an external electric field.

  10. Artificial molecules that switch "handedness" at light-speed

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Artificial molecules that switch "handedness" Artificial molecules that switch "handedness" at light-speed Researchers create the first artificial molecules whose chirality can be rapidly switched from a right-handed to a left-handed orientation with a beam of light. July 10, 2012 Los Alamos National Laboratory sits on top of a once-remote mesa in northern New Mexico with the Jemez mountains as a backdrop to research and innovation covering multi-disciplines from bioscience,

  11. Low jitter spark gap switch for repetitively pulsed parallel capacitor banks

    SciTech Connect (OSTI)

    Rohwein, G. J.

    1980-01-01

    A two-section air insulated spark gap has been developed for switching multi-kilojoule plus-minus charged parallel capacitor banks which operate continuously at pulse rates up to 20 pps. The switch operates with less than 2 ns jitter, recovers its dielectric strength within 2 to 5 ms and has not shown degraded performance in sequential test runs totaling over a million shots. Its estimated life with copper electrodes is > 10/sup 7/ shots. All preliminary tests indicate that the switch is suitable for continuous running multi-kilojoule systems operating to at least 20 pps.

  12. Differential ultrafast all-optical switching of the resonances of a micropillar cavity

    SciTech Connect (OSTI)

    Thyrrestrup, Henri Yce, Emre; Ctistis, Georgios; Vos, Willem L.; Claudon, Julien; Grard, Jean-Michel

    2014-09-15

    We perform frequency- and time-resolved all-optical switching of a GaAs-AlAs micropillar cavity using an ultrafast pump-probe setup. The switching is achieved by two-photon excitation of free carriers. We track the cavity resonances in time with a high frequency resolution. The pillar modes exhibit simultaneous frequency shifts, albeit with markedly different maximum switching amplitudes and relaxation dynamics. These differences stem from the non-uniformity of the free carrier density in the micropillar, and are well understood by taking into account the spatial distribution of injected free carriers, their spatial diffusion and surface recombination at micropillar sidewalls.

  13. Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation

    SciTech Connect (OSTI)

    Ohno, Takeo; Samukawa, Seiji

    2015-04-27

    Resistive switching in a Cu/Ta{sub 2}O{sub 5}/Pt structure that consisted of a few nanometer-thick Ta{sub 2}O{sub 5} film was demonstrated. The Ta{sub 2}O{sub 5} film with thicknesses of 25?nm was formed with a combination of Ta metal film deposition and neutral oxygen particle irradiation at room temperature. The device exhibited a bipolar resistive switching with a threshold voltage of 0.2?V and multilevel switching operation.

  14. Deterministic Arbitrary Switching of Polarization in a Ferroelectric Thin Film

    SciTech Connect (OSTI)

    Vasudevan, Rama K [ORNL; Matsumoto, Yuji [Tohoku University, Sendai, Japan; Cheng, Xuan [University of New South Wales, Sydney, Australia; Imai, Akira [Tokyo Institute of Technology; Maruyama, Shingo [Tohoku University, Sendai, Japan; Xin, Huolin L. [Brookhaven National Laboratory (BNL); Okatan, Mahmut B [ORNL; Jesse, Stephen [ORNL; Kalinin, Sergei V [ORNL; Nagarajan, Valanoor [University of New South Wales

    2014-01-01

    Ferroelectrics have been used as memory storage devices, with an upper bound on the total possible memory levels generally dictated by the number of degenerate states allowed by the symmetry of the ferroelectric phase. Here, we introduce a new concept for storage wherein the polarization can be rotated arbitrarily, effectively decoupling it from the crystallographic symmetry of the ferroelectric phase on the mesoscale. By using a Bi5Ti3FeO15-CoFe2O4 film and via Band-Excitation Piezoresponse Force Microscopy, we show the ability to arbitrarily rotate polarization, create a spectrum of switched states, and suggest the reason for the polarization rotation is an abundance of sub-50nm nanodomains. Transmission electron microscopy-based strain mapping confirms significant local strain undulations imparted on the matrix by the CoFe2O4 inclusions, which causes significant local disorder. These experiments point to controlled tuning of polarization rotation in a standard ferroelectric, and hence the potential to greatly extend the attainable densities for ferroelectric memories.

  15. Total ionizing dose effect of ?-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

    SciTech Connect (OSTI)

    Fang, Runchen; Yu, Shimeng; Gonzalez Velo, Yago; Chen, Wenhao; Holbert, Keith E.; Kozicki, Michael N.; Barnaby, Hugh

    2014-05-05

    The total ionizing dose (TID) effect of gamma-ray (?-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ?5.2 Mrad (HfO{sub 2}) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy ?-ray exposure.

  16. A Low Hysteresis NiTiFe Shape Memory Alloy Based Thermal Conduction Switch

    SciTech Connect (OSTI)

    Lemanski, J. L.; Krishnan, V. B.; Manjeri, R. Mahadevan; Vaidyanathan, R.; Notardonato, W. U.

    2006-03-31

    Shape memory alloys possess the ability to return to a preset shape by undergoing a solid state phase transformation at a particular temperature. This work reports on the development and testing of a low temperature thermal conduction switch that incorporates a NiTiFe shape memory element for actuation. The switch was developed to provide a variable conductive pathway between liquid methane and liquid oxygen dewars in order to passively regulate the temperature of methane. The shape memory element in the switch undergoes a rhombohedral or R-phase transformation that is associated with a small hysteresis (typically 1-2 deg. C) and offers the advantage of precision control over a set temperature range. For the NiTiFe alloy used, its thermomechanical processing, subsequent characterization using dilatometry, differential scanning calorimetry and implementation in the conduction switch configuration are addressed.

  17. Thread selection according to predefined power characteristics during context switching on compute nodes

    DOE Patents [OSTI]

    None

    2013-06-04

    Methods, apparatus, and products are disclosed for thread selection during context switching on a plurality of compute nodes that includes: executing, by a compute node, an application using a plurality of threads of execution, including executing one or more of the threads of execution; selecting, by the compute node from a plurality of available threads of execution for the application, a next thread of execution in dependence upon power characteristics for each of the available threads; determining, by the compute node, whether criteria for a thread context switch are satisfied; and performing, by the compute node, the thread context switch if the criteria for a thread context switch are satisfied, including executing the next thread of execution.

  18. Autoinhibition and Signaling by the Switch II Motif in the G...

    Office of Scientific and Technical Information (OSTI)

    the G-protein Chaperone of a Radical Bsubscript 12 Enzyme Citation Details In-Document Search Title: Autoinhibition and Signaling by the Switch II Motif in the G-protein ...

  19. Electro-optic harmonic conversion to switch a laser beam out of a cavity

    DOE Patents [OSTI]

    Haas, R.A.; Henesian, M.A.

    1984-10-19

    The present invention relates to switching laser beams out of laser cavities, and more particularly, it relates to the use of generating harmonics of the laser beam to accomplish the switching. When laser light is generatd in a laser cavity the problem arises of how to switch the laser light out of the cavity in order to make use of the resulting laser beam in a well known multitude of ways. These uses include range finding, communication, remote sensing, medical surgery, laser fusion applications and many more. The switch-out problem becomes more difficult as the size of the laser aperture grows such as in laser fusion applications. The final amplifier stages of the Nova and Novette lasers at Lawrence Livermore National Laboratory are 46 centimeters with the laser beam expanded to 74 centimeters thereafter. Larger aperture lasers are planned.

  20. Geo-neutrino Observation

    SciTech Connect (OSTI)

    Dye, S. T.; Alderman, M.; Batygov, M.; Learned, J. G.; Matsuno, S.; Mahoney, J. M.; Pakvasa, S.; Rosen, M.; Smith, S.; Varner, G.; McDonough, W. F.

    2009-12-17

    Observations of geo-neutrinos measure radiogenic heat production within the earth, providing information on the thermal history and dynamic processes of the mantle. Two detectors currently observe geo-neutrinos from underground locations. Other detection projects in various stages of development include a deep ocean observatory. This paper presents the current status of geo-neutrino observation and describes the scientific capabilities of the deep ocean observatory, with emphasis on geology and neutrino physics.

  1. Hot Pot Field Observations

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Lane, Michael

    2013-06-28

    Map of field observations including depressions, springs, evidence of former springs, travertine terraces and vegetation patterns. Map also contains interpretation of possible spring alignments.

  2. Hot Pot Field Observations

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Lane, Michael

    Map of field observations including depressions, springs, evidence of former springs, travertine terraces and vegetation patterns. Map also contains interpretation of possible spring alignments.

  3. Binary and ternary gas mixtures for use in glow discharge closing switches

    DOE Patents [OSTI]

    Hunter, Scott R. (Oak Ridge, TN); Christophorou, Loucas G. (Oak Ridge, TN)

    1990-01-01

    Highly efficient binary and ternary gas mixtures for use in diffuse glow discharge closing switches are disclosed. The binary mixtures are combinations of helium or neon and selected perfluorides. The ternary mixtures are combinations of helium, neon, or argon, a selected perfluoride, and a small amount of gas that exhibits enhanced ionization characteristics. These mixtures are shown to be the optimum choices for use in diffuse glow discharge closing switches by virtue of the combined physio-electric properties of the mixture components.

  4. Method for wiring allocation and switch configuration in a multiprocessor environment

    DOE Patents [OSTI]

    Aridor, Yariv (Zichron Ya'akov, IL); Domany, Tamar (Kiryat Tivon, IL); Frachtenberg, Eitan (Jerusalem, IL); Gal, Yoav (Haifa, IL); Shmueli, Edi (Haifa, IL); Stockmeyer, legal representative, Robert E. (San Jose, CA); Stockmeyer, Larry Joseph (San Jose, CA)

    2008-07-15

    A method for wiring allocation and switch configuration in a multiprocessor computer, the method including employing depth-first tree traversal to determine a plurality of paths among a plurality of processing elements allocated to a job along a plurality of switches and wires in a plurality of D-lines, and selecting one of the paths in accordance with at least one selection criterion.

  5. PPPL lends General Electric a hand in developing an advanced power switch |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Princeton Plasma Physics Lab lends General Electric a hand in developing an advanced power switch By John Greenwald August 28, 2014 Tweet Widget Google Plus One Share on Facebook Laboratory test of a liquid-metal cathode. (Photo by General Electric Co. ) Laboratory test of a liquid-metal cathode. Scientists at the U.S. Department of Energy's (DOE) Princeton Plasma Physics Laboratory (PPPL) are assisting General Electric Co. in developing an electrical switch that could help lower utility

  6. Viscosity Solutions of Systems of PDEs with Interconnected Obstacles and Switching Problem

    SciTech Connect (OSTI)

    Hamadene, S. Morlais, M. A.

    2013-04-15

    This paper deals with existence and uniqueness of a solution in viscosity sense, for a system of m variational partial differential inequalities with inter-connected obstacles. A particular case is the Hamilton-Jacobi-Bellmann system of the Markovian stochastic optimal m-states switching problem. The switching cost functions depend on (t,x). The main tool is the notion of systems of reflected backward stochastic differential equations with oblique reflection.

  7. Optical interconnect loop-back switch for in-situ diagnostics. (Conference)

    Office of Scientific and Technical Information (OSTI)

    | SciTech Connect interconnect loop-back switch for in-situ diagnostics. Citation Details In-Document Search Title: Optical interconnect loop-back switch for in-situ diagnostics. No abstract prepared. Authors: Spahn, Olga Blum ; Iannotti, Joe [1] ; Lewek, Daniel [2] ; Kornrumpf, Bill [3] ; Forman, Glenn [4] ; Kryzak, Chuck [5] ; Thorson, Kevin [6] ; Cowan, Bill ; Dagel, Daryl James ; Grossetete, Grant David + Show Author Affiliations (General Electric Global Research Center, Niskayuna, NY)

  8. Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

    DOE Patents [OSTI]

    Sumant, Anirudha V.; Auciello, Orlando H.; Mancini, Derrick C.

    2013-01-15

    An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

  9. NERSC Helps Researchers Discover a Potential On-Off Switch for

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanoelectronics Researchers Discover a Potential On-Off Switch for Nanoelectronics NERSC Helps Researchers Discover a Potential On-Off Switch for Nanoelectronics December 22, 2009 Researchers at the Lawrence Berkeley National Laboratory's (Berkeley Lab) Molecular Foundry and Columbia University found that electrical resistance through a molecular junction-a nanometer scale circuit element consisting of a single molecule contacted with gold wires-can be turned on and off by simply pushing and

  10. Current dependence of spin torque switching rate based on Fokker-Planck approach

    SciTech Connect (OSTI)

    Taniguchi, Tomohiro Imamura, Hiroshi

    2014-05-07

    The spin torque switching rate of an in-plane magnetized system in the presence of an applied field is derived by solving the Fokker-Planck equation. It is found that three scaling currents are necessary to describe the current dependence of the switching rate in the low-current limit. The dependences of these scaling currents on the applied field strength are also studied.

  11. Ultrashort pulse laser-triggering of long gap high voltage switches.

    Office of Scientific and Technical Information (OSTI)

    (Technical Report) | SciTech Connect Technical Report: Ultrashort pulse laser-triggering of long gap high voltage switches. Citation Details In-Document Search Title: Ultrashort pulse laser-triggering of long gap high voltage switches. Authors: Rambo, Patrick K. ; Schwarz, Jens ; Kimmel, Mark W. ; Van Tassle, Aaron J. ; Urayama, Junji ; Welch, Dale Robert [1] ; Rose, David V. [1] ; Thoma, Carsten [1] ; Clark, Robert E. [1] ; Miller, Craig [1] ; Zimmerman, William R. [1] ; Pitts, Todd Alan ;

  12. Ultrashort pulse laser-triggering of long gap high voltage switches.

    Office of Scientific and Technical Information (OSTI)

    (Technical Report) | SciTech Connect Technical Report: Ultrashort pulse laser-triggering of long gap high voltage switches. Citation Details In-Document Search Title: Ultrashort pulse laser-triggering of long gap high voltage switches. × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information

  13. SEP Success Story: Louisiana Company Makes Switch to CNG, Helps Transform

    Energy Savers [EERE]

    Local Fuel Supplies | Department of Energy Louisiana Company Makes Switch to CNG, Helps Transform Local Fuel Supplies SEP Success Story: Louisiana Company Makes Switch to CNG, Helps Transform Local Fuel Supplies April 23, 2014 - 10:15am Addthis Shreveport, Louisiana's first public heavy duty CNG fueling station officially opened on Earth Day. | Photo courtesy of Ivan Smith Furniture Shreveport, Louisiana's first public heavy duty CNG fueling station officially opened on Earth Day. | Photo

  14. Louisiana Company Makes Switch to CNG, Helps Transform Local Fuel Supplies

    Office of Environmental Management (EM)

    | Department of Energy Louisiana Company Makes Switch to CNG, Helps Transform Local Fuel Supplies Louisiana Company Makes Switch to CNG, Helps Transform Local Fuel Supplies April 23, 2014 - 1:43pm Addthis Shreveport, Louisiana's first public heavy duty CNG fueling station officially opened on Earth Day. | Photo courtesy of Ivan Smith Furniture Shreveport, Louisiana's first public heavy duty CNG fueling station officially opened on Earth Day. | Photo courtesy of Ivan Smith Furniture Cedric

  15. Get Current: Switch on Clean Energy Activity Book | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Activity Book Get Current: Switch on Clean Energy Activity Book Below is information about the student activity/lesson plan from your search. Grades K-4, 5-8, 9-12 Subject Energy Basics Summary Switching on clean energy technologies means strengthening the economy while protecting the environment. This activity book for all ages promotes energy awareness, with facts on different types of energy and a variety of puzzles in an energy theme. Curriculum Science, Mathematics, Language Arts Plan Time

  16. Phase space quantum mechanics - Direct

    SciTech Connect (OSTI)

    Nasiri, S.; Sobouti, Y.; Taati, F.

    2006-09-15

    Conventional approach to quantum mechanics in phase space (q,p), is to take the operator based quantum mechanics of Schroedinger, or an equivalent, and assign a c-number function in phase space to it. We propose to begin with a higher level of abstraction, in which the independence and the symmetric role of q and p is maintained throughout, and at once arrive at phase space state functions. Upon reduction to the q- or p-space the proposed formalism gives the conventional quantum mechanics, however, with a definite rule for ordering of factors of noncommuting observables. Further conceptual and practical merits of the formalism are demonstrated throughout the text.

  17. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, Daniel W.; Lange, Arnold C.

    1997-01-01

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

  18. E-beam high voltage switching power supply

    DOE Patents [OSTI]

    Shimer, D.W.; Lange, A.C.

    1997-03-11

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360{degree}/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs.

  19. Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

    SciTech Connect (OSTI)

    Liu, Yanhong; Gao, Ping; Bi, Kaifeng; Peng, Wei [School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024 (China); Jiang, Xuening; Xu, Hongxia [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian116024 (China)

    2014-01-27

    Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

  20. Magnetic switching behaviors of orbital states with different magnetic quantum numbers in Au/Fe/MgO multilayer system

    SciTech Connect (OSTI)

    Suzuki, Kosuke Takubo, Shota; Kato, Tadashi; Yamazoe, Masatoshi; Hoshi, Kazushi; Sakurai, Hiroshi; Homma, Yoshiya; Itou, Masayoshi; Sakurai, Yoshiharu

    2014-08-18

    A spin specific magnetic hysteresis (SSMH) curve and an orbital specific magnetic hysteresis (OSMH) curve are obtained for Fe/Au/Fe/MgO multilayers by magnetic Compton scattering and SQUID magnetometer measurements. The SSMH curve with each contribution of magnetic quantum number |m| = 0, 1, and 2 states is obtained by decomposition analyses of magnetic Compton profiles. Residual magnetization is observed for the SSMH curve with magnetic quantum number |m| = 0, 2 and the OSMH curve. Although the SQUID magnetometer measurements do not show perpendicular magnetic anisotropy (PMA) in the present Fe/Au/Fe/MgO multilayer film, the SSMH curve with magnetic quantum number |m| = 0, 2 and OSMH curve show switching behaviors of PMA.

  1. The universal criterion for switching a magnetic vortex core in soft magnetic nanodots

    SciTech Connect (OSTI)

    Lee, K.-S.; Kim, S.-K.; Yu, Y.-S.; Choi, Y.-S.; Guslienko, K. Y.; Jung, H.; Fischer, P.

    2008-10-01

    The universal criterion for ultrafast vortex core switching between core-up and -down vortex bi-states in soft magnetic nanodots was empirically investigated by micromagnetic simulations and combined with an analytical approach. Vortex-core switching occurs whenever the velocity of vortex core motion reaches a critical value, which is {nu}{sub c} = 330 {+-} 37 m/s for Permalloy, as estimated from numerical simulations. This critical velocity was found to be {nu}{sub c} = {eta}{sub c}{gamma} {radical}A{sub ex} with A{sub ex} the exchange stiffness, {gamma} the gyromagnetic ratio, and an estimated proportional constant {eta}{sub c} = 1.66 {+-} 0.18. This criterion does neither depend on driving force parameters nor on the dimension or geometry of the magnetic specimen. The phase diagrams for the vortex core switching criterion and its switching time with respect to both the strength and angular frequency of circular rotating magnetic fields were derived, which offer practical guidance for implementing vortex core switching into future solid state information storage devices.

  2. A Soft-Switching Inverter for High-Temperature Advanced Hybrid Electric Vehicle Traction Motor Drives

    SciTech Connect (OSTI)

    None, None

    2012-01-31

    The state-of-the-art hybrid electric vehicles (HEVs) require the inverter cooling system to have a separate loop to avoid power semiconductor junction over temperatures because the engine coolant temperature of 105?C does not allow for much temperature rise in silicon devices. The proposed work is to develop an advanced soft-switching inverter that will eliminate the device switching loss and cut down the power loss so that the inverter can operate at high-temperature conditions while operating at high switching frequencies with small current ripple in low inductance based permanent magnet motors. The proposed tasks also include high-temperature packaging and thermal modeling and simulation to ensure the packaged module can operate at the desired temperature. The developed module will be integrated with the motor and vehicle controller for dynamometer and in-vehicle testing to prove its superiority. This report will describe the detailed technical design of the soft-switching inverters and their test results. The experiments were conducted both in module level for the module conduction and switching characteristics and in inverter level for its efficiency under inductive and dynamometer load conditions. The performance will be compared with the DOE original specification.

  3. Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells

    SciTech Connect (OSTI)

    Yun, Min Ju; Kim, Hee-Dong; Man Hong, Seok; Hyun Park, Ju; Su Jeon, Dong; Geun Kim, Tae

    2014-03-07

    The metal nanocrystals (NCs) embedded-NiN-based resistive random access memory cells are demonstrated using several metal NCs (i.e., Pt, Ni, and Ti) with different physical parameters in order to investigate the metal NC's dependence on resistive switching (RS) characteristics. First, depending on the electronegativity of metal, the size of metal NCs is determined and this affects the operating current of memory cells. If metal NCs with high electronegativity are incorporated, the size of the NCs is reduced; hence, the operating current is reduced owing to the reduced density of the electric field around the metal NCs. Second, the potential wells are formed by the difference of work function between the metal NCs and active layer, and the barrier height of the potential wells affects the level of operating voltage as well as the conduction mechanism of metal NCs embedded memory cells. Therefore, by understanding these correlations between the active layer and embedded metal NCs, we can optimize the RS properties of metal NCs embedded memory cells as well as predict their conduction mechanisms.

  4. Observation of Ordered Structures in Counterion Layers near Wet Charged

    Office of Scientific and Technical Information (OSTI)

    Surfaces: A Potential Mechanism for Charge Inversion (Journal Article) | SciTech Connect Observation of Ordered Structures in Counterion Layers near Wet Charged Surfaces: A Potential Mechanism for Charge Inversion Citation Details In-Document Search Title: Observation of Ordered Structures in Counterion Layers near Wet Charged Surfaces: A Potential Mechanism for Charge Inversion Authors: Miller, Mitchell ; Chu, Miaoqi ; Lin, Binhua ; Meron, Mati ; Dutta, Pulak [1] ; NWU) [2] + Show Author

  5. Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

    DOE Patents [OSTI]

    Hohimer, J.P.

    1994-06-07

    A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure. 6 figs.

  6. Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

    DOE Patents [OSTI]

    Hohimer, John P. (Albuquerque, NM)

    1994-01-01

    A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.

  7. Fuel switching in the electricity sector under the EU ETS: Review and prospective

    SciTech Connect (OSTI)

    Delarue, E.; Voorspools, K.; D'haeseleer, W.

    2008-06-15

    The European Union has implemented the European Union emission trading scheme (EU ETS) as an instrument to facilitate greenhouse gas (GHG) emission abatement stipulated in the Kyoto protocol. Empirical data show that in the early stages of the EU ETS, the value of a ton of CO{sub 2} has already led to emission abatement through switching from coal to gas in the European electric power sector. In the second part of this paper, an electricity generation simulation model is used to perform simulations on the switching behavior in both the first and the second trading periods of the EU ETS. In 2005, the reduction in GHG emissions in the electric power sector due to EU ETS is estimated close to 88 Mton. For the second trading period, a European Union allowance (EUA) price dependent GHG reduction curve has been determined. The obtained switching potential turns out to be significant, up to 300 Mton/year, at sufficiently high EUA prices.

  8. Safety Observations Achieve Results

    Energy Science and Technology Software Center (OSTI)

    2000-01-16

    The SOAR web application provides a multi-checklist capability where focused observations can be created to address risk-likely work environments, tasks, etc. The SOAR web application has numerous reports to sort the data by key word, multiple factors (i.e., location, team, behavior, checklist, work environment, etc.), and the highest frequency of behaviors and error-likely predecessors, etc. Other performance indicators are also provided.

  9. Earth System Observations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4 Earth System Observations Research comprises Earth, ocean, and atmospheric sciences to better understand and predict climate change's impact on ecosystems and to study subsurface geological materials and their interactions. Deploying research facilities globally Forecasting forests' responses to climate change Monitoring terrestrial ecosystems Contact Us Group Leader (acting) Bob Roback Email Deputy Group Leader (acting) Jeff Heikoop Email Profile pages header Search our Profile pages

  10. Electro-optic harmonic conversion to switch a laser beam out of a cavity

    DOE Patents [OSTI]

    Haas, Roger A. (Pleasanton, CA); Henesian, Mark A. (Livermore, CA)

    1987-01-01

    The invention is a switch to permit a laser beam to escape a laser cavity through the use of an externally applied electric field across a harmonic conversion crystal. Amplification takes place in the laser cavity, and then the laser beam is switched out by the laser light being harmonically converted with dichroic or polarization sensitive elements present to alter the optical path of the harmonically converted laser light. Modulation of the laser beam can also be accomplished by varying the external electric field.

  11. Autoinhibition and Signaling by the Switch II Motif in the G-protein

    Office of Scientific and Technical Information (OSTI)

    Chaperone of a Radical B[subscript 12] Enzyme (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Autoinhibition and Signaling by the Switch II Motif in the G-protein Chaperone of a Radical B[subscript 12] Enzyme Citation Details In-Document Search Title: Autoinhibition and Signaling by the Switch II Motif in the G-protein Chaperone of a Radical B[subscript 12] Enzyme Authors: Lofgren, Michael ; Koutmos, Markos ; Banerjee, Ruma [1] ; Michigan-Med) [2] + Show

  12. Binary and ternary gas mixtures for use in glow discharge closing switches

    DOE Patents [OSTI]

    Hunter, S.R.; Christophorou, L.G.

    1988-04-27

    Highly efficient binary and ternary gas mixtures for use in diffuse glow discharge closing switches are disclosed. The binary mixtures are combinations of helium or neon and selected perfluorides. The ternary mixtures are combinations of helium, neon, or argon, a selected perfluoride, and a small amount of gas that exhibits enhanced ionization characteristics. These mixtures are shown to be the optimum choices for use in diffuse glow discharge closing switches by virtue if the combines physio-electric properties of the mixture components. 9 figs.

  13. Electrode with transparent series resistance for uniform switching of optical modulation devices

    DOE Patents [OSTI]

    Tench, D. Morgan (Camarillo, CA); Cunningham, Michael A. (Thousand Oaks, CA); Kobrin, Paul H. (Newbury Park, CA)

    2008-01-08

    Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.

  14. Photochemical switching behavior of azofunctionalized polymer liquid crystal/SiO{sub 2} composite photonic crystal

    SciTech Connect (OSTI)

    Moritsugu, M.; Kim, S. N.; Ogata, T.; Nonaka, T.; Kurihara, S.; Kubo, S.; Segawa, H.; Sato, O.

    2006-10-09

    A photochemically tunable photonic crystal was prepared by infiltrating azopolymer liquid crystal in a SiO{sub 2} inverse opal structure. The SiO{sub 2} inverse opal film obtained reflected a light corresponding to the periodicity as well as the refractive indices of the inverse opal structure. Linearly polarized light irradiation shifted the reflection band to longer wavelength more than 15 nm. This is caused by the formation of anisotropic molecular orientation of the azopolymer. The switched state was stable in the dark, and the reversible switching of the reflection band can be achieved by the linearly and circularly polarized light irradiations.

  15. Slideshow: Flipping the Switch on LED Lighting for the National Mall |

    Energy Savers [EERE]

    Department of Energy Slideshow: Flipping the Switch on LED Lighting for the National Mall Slideshow: Flipping the Switch on LED Lighting for the National Mall January 31, 2012 - 3:05pm Addthis 1 of 8 Facing East toward the Capitol Building, LED retrofitted lights line the interior paths of the mall while preserving the architectural integrity of the original fixtures. Image: Energy Department Image | Photo by Quentin Kruger (Contractor) | Public Domain Date taken: 2012-01-30 06:00 2 of 8

  16. Salazar, Chu to Flip Switch on Energy-Efficient LED Lights on National Mall

    Energy Savers [EERE]

    | Department of Energy Salazar, Chu to Flip Switch on Energy-Efficient LED Lights on National Mall Salazar, Chu to Flip Switch on Energy-Efficient LED Lights on National Mall January 30, 2012 - 11:02am Addthis WASHINGTON, D.C.-Today, Secretary of the Interior Ken Salazar and Secretary of Energy Steven Chu will participate in a lighting ceremony featuring the newly-installed LED lights on the National Mall. Illuminating the Mall from 3rd to 15th Streets, the LED technology is expected to

  17. EECBG Success Story: Texas County "Flips The Switch" On New

    Office of Environmental Management (EM)

    Energy-Efficient Complex | Department of Energy Texas County "Flips The Switch" On New Energy-Efficient Complex EECBG Success Story: Texas County "Flips The Switch" On New Energy-Efficient Complex March 7, 2011 - 5:17pm Addthis Fifth graders from Pharr-San Juan-Alamo Independent School District’s North Alamo Elementary celebrate the opening of the new Precinct 2 Multi-Purpose Facility and Administration Complex in Hidalgo County, Texas. The students received tours of

  18. New Switches for Utility-Scale Inverters: First In-Class Demonstration of a Completely New Type of SiC Bipolar Switch (15kV-20kV) for Utility-Scale Inverters

    SciTech Connect (OSTI)

    2011-12-31

    Solar ADEPT Project: The SiCLAB is developing a new power switch for utility-scale PV inverters that would improve the performance and significantly reduce the size, weight, and energy loss of PV systems. A power switch controls the electrical energy flowing through an inverter, which takes the electrical current from a PV solar panel and converts it into the type and amount of electricity that is compatible with the electric grid. SiCLAB is using silicon carbide (SiC) semiconductors in its new power switches, which are more efficient than the silicon semiconductors used to conduct electricity in most conventional power switches today. Switches with SiC semiconductors can operate at much higher temperatures, as well as higher voltage and power levels than silicon switches. SiC-based power switches are also smaller than those made with silicon alone, so they result in much smaller and lighter electrical devices. In addition to their use in utility-scale PV inverters, SiCLABs new power switches can also be used in wind turbines, railways, and other smart grid applications.

  19. Rock mechanics design in mining and tunneling

    SciTech Connect (OSTI)

    Bieniawski, Z.T.

    1984-01-01

    This book introduces the design process as applied to rock mechanics aspects of underground mining and tunneling. Topics covered include a historical perspective, the design process in engineering, empirical methods of design, observational methods of design, and guided design.

  20. Mechanics | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Mechanics Mechanics A deeper look at the mechanics and gameplay A deeper look at the mechanics and gameplay Mechanics Breakdown In Brief Players must connect buildings together by allocating resources in a resource chain across the map. They must reach and resolve their Objective within a given number of turns to succeed. To accomplish this, they have the following tools at their disposal: Linking Connect buildings together by allocating resources from buildings that produce them to buildings

  1. Three-dimensional fully-coupled electrical and thermal transport model of dynamic switching in oxide memristors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gao, Xujiao; Mamaluy, Denis; Mickel, Patrick R.; Marinella, Matthew

    2015-09-08

    In this paper, we present a fully-coupled electrical and thermal transport model for oxide memristors that solves simultaneously the time-dependent continuity equations for all relevant carriers, together with the time-dependent heat equation including Joule heating sources. The model captures all the important processes that drive memristive switching and is applicable to simulate switching behavior in a wide range of oxide memristors. The model is applied to simulate the ON switching in a 3D filamentary TaOx memristor. Simulation results show that, for uniform vacancy density in the OFF state, vacancies fill in the conduction filament till saturation, and then fill outmore » a gap formed in the Ta electrode during ON switching; furthermore, ON-switching time strongly depends on applied voltage and the ON-to-OFF current ratio is sensitive to the filament vacancy density in the OFF state.« less

  2. OLiMPS. OpenFlow Link-layer MultiPath Switching

    SciTech Connect (OSTI)

    Newman, Harvey B.; Barczyk, Artur; Bredel, Michael

    2014-11-17

    The OLiMPS projects goal was the development of an OpenFlow controller application allowing load balancing over multiple switched paths across a complex network topology. The second goal was to integrate the controller with Dynamic Circuit Network systems such as ESnets OSCARS. Both goals were achieved successfully, as laid out in this report.

  3. FERROELECTRIC SWITCH FOR A HIGH-POWER Ka-BAND ACTIVE PULSE COMPRESSOR

    SciTech Connect (OSTI)

    Hirshfield, Jay L.

    2013-12-18

    Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW μs-length Ka-band pulses to be compressed in time by a factor-of-9 and multiplied in amplitude to generate 200 MW peak power pulses. Such high-power pulses could be used for testing and evaluation of high-gradient mm-wave accelerator structures, for example. Evaluation of the switch design was carried out with an X-band (11.43 GHz) prototype, built to incorporate all the features required for the Ka-band version.

  4. Differentially-charged and sequentially-switched square-wave pulse forming network

    DOE Patents [OSTI]

    North, George G. [Stockton, CA; Vogilin, George E. [Livermore, CA

    1980-04-01

    A pulse forming network for delivering a high-energy square-wave pulse to a load, including a series of inductive-capacitive sections wherein the capacitors are differentially charged higher further from the load. Each charged capacitor is isolated from adjacent sections and the load by means of a normally open switch at the output of each section. The switch between the load and the closest section to the load is closed to begin discharge of the capacitor in that section into the load. During discharge of each capacitor, the voltage thereacross falls to a predetermined potential with respect to the potential across the capacitor in the next adjacent section further from the load. When this potential is reached, it is used to close the switch in the adjacent section further from the load and thereby apply the charge in that section to the load through the adjacent section toward the load. Each successive section further from the load is sequentially switched in this manner to continuously and evenly supply energy to the load over the period of the pulse, with the differentially charged capacitors providing higher potentials away from the load to compensate for the voltage drop across the resistance of each inductor. This arrangement is low in cost and yet provides a high-energy pulse in an acceptable square-wave form.

  5. Differentially-charged and sequentially-switched square-wave pulse forming network

    DOE Patents [OSTI]

    North, G.G.; Vogilin, G.E.

    1980-04-01

    Disclosed is a pulse forming network for delivering a high-energy square-wave pulse to a load, including a series of inductive-capacitive sections wherein the capacitors are differentially charged higher further from the load. Each charged capacitor is isolated from adjacent sections and the load by means of a normally open switch at the output of each section. The switch between the load and the closest section to the load is closed to begin discharge of the capacitor in that section into the load. During discharge of each capacitor, the voltage thereacross falls to a predetermined potential with respect to the potential across the capacitor in the next adjacent section further from the load. When this potential is reached, it is used to close the switch in the adjacent section further from the load and thereby apply the charge in that section to the load through the adjacent section toward the load. Each successive section further from the load is sequentially switched in this manner to continuously and evenly supply energy to the load over the period of the pulse, with the differentially charged capacitors providing higher potentials away from the load to compensate for the voltage drop across the resistance of each inductor. This arrangement is low in cost and yet provides a high-energy pulse in an acceptable square-wave form. 5 figs.

  6. Table A57. Capability to Switch from Coal to Alternative Energy Sources by

    U.S. Energy Information Administration (EIA) Indexed Site

    7. Capability to Switch from Coal to Alternative Energy Sources by" " Industry Group, Selected Industries, and Selected Characteristics, 1991 " " (Estimates in Thousand Short Tons)" " "," "," ", " "," "," Coal",,," Alternative Types of Energy(b)" " ","

  7. Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces

    DOE Patents [OSTI]

    Sullivan, James S.; Hawkins, Steven A.

    2012-09-04

    An improved photoconductive switch having a SiC or other wide band gap substrate material with opposing contoured profile cavities which have a contoured profile selected from one of Rogowski, Bruce, Chang, Harrison, and Ernst profiles, and two electrodes with matching contoured-profile convex interface surfaces.

  8. An overview of the video switch management system for AVLIS experiments

    SciTech Connect (OSTI)

    Palasek, R.L.; Killian, M.J.; Zimmerman, M.D.

    1991-09-01

    The use of video images in the AVLIS systems is pervasive. Video images are taken, and displayed for functions such as pointing and centering, surveying (finding beam location), examining overlap of beams, and diagnostic analyses. The process laser light is generated, converted, tuned, amplified, split, and recombined in many stages; each stage relies on video images for operation, control and feedback. Without the ability to bring these many images together into one control room, operation and diagnostics of the AVLIS processes would be practically impossible. Of all auxiliary systems in the AVLIS process, video service is probably second only to the safety interlock system in importance. The video switch management computer system was needed to implement a virtual switch, where no commercial cross point switch was large enough or of practical cost. The system routes images to remote operator stations, integrates control of video image switching into the control of process devices, and reduces the cost and rack space needs of hardware controllers in work areas where there are numerous monitors. Access to remote images allow both operators and experimenters in one area to see images from other areas of the light chain. In some experiments, the process is physically distributed across the laboratory; problem resolution is facilitated if personnel at distant stations can see and talk about the same image simultaneously.

  9. Internal pipe attachment mechanism

    DOE Patents [OSTI]

    Bast, Richard M. (Livermore, CA); Chesnut, Dwayne A. (Pleasanton, CA); Henning, Carl D. (Livermore, CA); Lennon, Joseph P. (Livermore, CA); Pastrnak, John W. (Livermore, CA); Smith, Joseph A. (Livermore, CA)

    1994-01-01

    An attachment mechanism for repairing or extending fluid carrying pipes, casings, conduits, etc. utilizing one-way motion of spring tempered fingers to provide a mechanical connection between the attachment mechanism and the pipe. The spring tempered fingers flex to permit insertion into a pipe to a desired insertion depth. The mechanical connection is accomplished by reversing the insertion motion and the mechanical leverage in the fingers forces them outwardly against the inner wall of the pipe. A seal is generated by crushing a sealing assembly by the action of setting the mechanical connection.

  10. Internal pipe attachment mechanism

    DOE Patents [OSTI]

    Bast, R.M.; Chesnut, D.A.; Henning, C.D.; Lennon, J.P.; Pastrnak, J.W.; Smith, J.A.

    1994-12-13

    An attachment mechanism is described for repairing or extending fluid carrying pipes, casings, conduits, etc. utilizing one-way motion of spring tempered fingers to provide a mechanical connection between the attachment mechanism and the pipe. The spring tempered fingers flex to permit insertion into a pipe to a desired insertion depth. The mechanical connection is accomplished by reversing the insertion motion and the mechanical leverage in the fingers forces them outwardly against the inner wall of the pipe. A seal is generated by crushing a sealing assembly by the action of setting the mechanical connection. 6 figures.

  11. OBSERVING CORONAL NANOFLARES IN ACTIVE REGION MOSS

    SciTech Connect (OSTI)

    Testa, Paola; DeLuca, Ed; Golub, Leon; Korreck, Kelly; Weber, Mark; De Pontieu, Bart; Martinez-Sykora, Juan; Title, Alan; Hansteen, Viggo; Cirtain, Jonathan; Winebarger, Amy; Kobayashi, Ken; Kuzin, Sergey; Walsh, Robert; DeForest, Craig

    2013-06-10

    The High-resolution Coronal Imager (Hi-C) has provided Fe XII 193A images of the upper transition region moss at an unprecedented spatial ({approx}0.''3-0.''4) and temporal (5.5 s) resolution. The Hi-C observations show in some moss regions variability on timescales down to {approx}15 s, significantly shorter than the minute-scale variability typically found in previous observations of moss, therefore challenging the conclusion of moss being heated in a mostly steady manner. These rapid variability moss regions are located at the footpoints of bright hot coronal loops observed by the Solar Dynamics Observatory/Atmospheric Imaging Assembly in the 94 A channel, and by the Hinode/X-Ray Telescope. The configuration of these loops is highly dynamic, and suggestive of slipping reconnection. We interpret these events as signatures of heating events associated with reconnection occurring in the overlying hot coronal loops, i.e., coronal nanoflares. We estimate the order of magnitude of the energy in these events to be of at least a few 10{sup 23} erg, also supporting the nanoflare scenario. These Hi-C observations suggest that future observations at comparable high spatial and temporal resolution, with more extensive temperature coverage, are required to determine the exact characteristics of the heating mechanism(s).

  12. Modeling the mechanical response of PBX 9501

    SciTech Connect (OSTI)

    Ragaswamy, Partha; Lewis, Matthew W; Liu, Cheng; Thompson, Darla G

    2010-01-01

    An engineering overview of the mechanical response of Plastic-Bonded eXplosives (PBXs), specifically PBX 9501, will be provided with emphasis on observed mechanisms associated with different types of mechanical testing. Mechanical tests in the form of uniaxial tension, compression, cyclic loading, creep (compression and tension), and Hopkinson bar show strain rate and temperature dependence. A range of mechanical behavior is observed which includes small strain recoverable response in the form of viscoelasticity; change in stiffness and softening beyond peak strength due to damage in the form microcracks, debonding, void formation and the growth of existing voids; inelastic response in the form of irrecoverable strain as shown in cyclic tests, and viscoelastic creep combined with plastic response as demonstrated in creep and recovery tests. The main focus of this paper is to elucidate the challenges and issues involved in modeling the mechanical behavior of PBXs for simulating thermo-mechanical responses in engineering components. Examples of validation of a constitutive material model based on a few of the observed mechanisms will be demonstrated against three point bending, split Hopkinson pressure bar and Brazilian disk geometry.

  13. Current-induced spin-orbit torque switching of perpendicularly magnetized Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} structures

    SciTech Connect (OSTI)

    Akyol, Mustafa; Yu, Guoqiang; Alzate, Juan G.; Upadhyaya, Pramey; Li, Xiang; Wong, Kin L.; Khalili Amiri, Pedram; Wang, Kang L.; Ekicibil, Ahmet

    2015-04-20

    We study the effect of the oxide layer on current-induced perpendicular magnetization switching properties in Hf|CoFeB|MgO and Hf|CoFeB|TaO{sub x} tri-layers. The studied structures exhibit broken in-plane inversion symmetry due to a wedged CoFeB layer, resulting in a field-like spin-orbit torque (SOT), which can be quantified by a perpendicular (out-of-plane) effective magnetic field. A clear difference in the magnitude of this effective magnetic field (H{sub z}{sup FL}) was observed between these two structures. In particular, while the current-driven deterministic perpendicular magnetic switching was observed at zero magnetic bias field in Hf|CoFeB|MgO, an external magnetic field is necessary to switch the CoFeB layer deterministically in Hf|CoFeB|TaO{sub x}. Based on the experimental results, the SOT magnitude (H{sub z}{sup FL} per current density) in Hf|CoFeB|MgO (?14.12?Oe/10{sup 7} A cm{sup ?2}) was found to be almost 13 larger than that in Hf|CoFeB|TaO{sub x} (?1.05?Oe/10{sup 7} A cm{sup ?2}). The CoFeB thickness dependence of the magnetic switching behavior, and the resulting ?H{sub z}{sup FL} generated by in-plane currents are also investigated in this work.

  14. Aided by Simulations, Scientists Observe Atomic Collapse State

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atomic Collapse State Observed Aided by Simulations, Scientists Observe Atomic Collapse State Quantum Mechanics Prediction Confirmed in Graphene Using NERSC's Hopper April 26, 2013 Contact: Linda Vu, lvu@lbl.gov, +1 510 495 2402 Michael Crommie runs the research group that made the discovery. He holds joint appointments with Berkeley Lab and UC Berkeley. (Photo by Roy Kaltschmidt) Scientists have finally confirmed a 70 year-old prediction in quantum mechanics-that electrons in super-heavy atoms

  15. Domain wall assisted magnetization switching in (111) oriented L1{sub 0} FePt grown on a soft magnetic metallic glass

    SciTech Connect (OSTI)

    Kaushik, Neelam; Sharma, Parmanand; Yubuta, Kunio; Makino, Akihiro; Inoue, Akihisa

    2010-08-16

    We report on growth and magnetic properties of exchange-coupled (111)-L1{sub 0} FePt hard/CoFeTaB soft magnetic metallic glass bilayered structure processed at lower temperature ({approx}400 deg. C). Single phaselike hysteresis loops with tailorable coercivity (<8.2 kOe) in out of plane direction are obtained. The magnetization switching mechanism is identified as domain wall assisted. In views of excellent nanofabrication abilities of metallic glass thin film and the ability to grow preferred oriented L1{sub 0} FePt, the present bilayered structure is very promising for the fabrication of high density bit--patterned magnetic recording media and other spintronic devices.

  16. Mechanical seal assembly

    DOE Patents [OSTI]

    Kotlyar, Oleg M. (Salt Lake City, UT)

    2002-01-01

    An improved mechanical seal assembly is provided for sealing rotating shafts with respect to their shaft housings, wherein the rotating shafts are subject to substantial axial vibrations. The mechanical seal assembly generally includes a rotating sealing ring fixed to the shaft, a non-rotating sealing ring adjacent to and in close contact with the rotating sealing ring for forming an annular seal about the shaft, and a mechanical diode element that applies a biasing force to the non-rotating sealing ring by means of hemispherical joint. The alignment of the mechanical diode with respect to the sealing rings is maintained by a series of linear bearings positioned axially along a desired length of the mechanical diode. Alternative embodiments include mechanical or hydraulic amplification components for amplifying axial displacement of the non-rotating sealing ring and transfering it to the mechanical diode.

  17. Mechanical seal assembly

    DOE Patents [OSTI]

    Kotlyar, Oleg M. (Salt Lake City, UT)

    2001-01-01

    An improved mechanical seal assembly is provided for sealing rotating shafts with respect to their shaft housings, wherein the rotating shafts are subject to substantial axial vibrations. The mechanical seal assembly generally includes a rotating sealing ring fixed to the shaft, a non-rotating sealing ring adjacent to and in close contact with the rotating sealing ring for forming an annular seal about the shaft, and a mechanical diode element that applies a biasing force to the non-rotating sealing ring by means of hemispherical joint. The alignment of the mechanical diode with respect to the sealing rings is maintained by a series of linear bearings positioned axially along a desired length of the mechanical diode. Alternative embodiments include mechanical or hydraulic amplification components for amplifying axial displacement of the non-rotating sealing ring and transferring it to the mechanical diode.

  18. Fuel switching from wood to LPG can benefit the environment

    SciTech Connect (OSTI)

    Nautiyal, Sunil Kaechele, Harald

    2008-11-15

    The Himalaya in India is one of the world's biodiversity hotspots. Various scientific studies have reported and proven that many factors are responsible for the tremendous decline of the Himalayan forests. Extraction of wood biomass from the forests for fuel is one of the factors, as rural households rely entirely on this for their domestic energy. Efforts continue for both conservation and development of the Himalayan forests and landscape. It has been reported that people are still looking for more viable solutions that could help them to improve their lifestyle as well as facilitate ecosystem conservation and preservation of existing biodiversity. In this direction, we have documented the potential of the introduction of liquefied petroleum gas (LPG), which is one of the solutions that have been offered to the local people as a substitute for woodfuel to help meet their domestic energy demand. The results of the current study found dramatic change in per capita woodfuel consumption in the last two decades in the villages where people are using LPG. The outcome showed that woodfuel consumption had been about 475 kg per capita per year in the region, but after introduction of LPG, this was reduced to 285 kg per capita per year in 1990-1995, and was further reduced to 46 kg per capita per year in 2000-2005. Besides improving the living conditions of the local people, this transformation has had great environmental consequences. Empirical evidence shows that this new paradigm shift is having positive external effects on the surrounding forests. Consequently, we have observed a high density of tree saplings and seedlings in adjacent forests, which serves as an assessment indicator of forest health. With the help of the current study, we propose that when thinking about a top-down approach to conservation, better solutions, which are often ignored, should be offered to local people.

  19. Robust random number generation using steady-state emission of gain-switched laser diodes

    SciTech Connect (OSTI)

    Yuan, Z. L. Lucamarini, M.; Dynes, J. F.; Frhlich, B.; Plews, A.; Shields, A. J.

    2014-06-30

    We demonstrate robust, high-speed random number generation using interference of the steady-state emission of guaranteed random phases, obtained through gain-switching a semiconductor laser diode. Steady-state emission tolerates large temporal pulse misalignments and therefore significantly improves the interference quality. Using an 8-bit digitizer followed by a finite-impulse-response unbiasing algorithm, we achieve random number generation rates of 8 and 20?Gb/s, for laser repetition rates of 1 and 2.5?GHz, respectively, with a 20% tolerance in the interferometer differential delay. We also report a generation rate of 80?Gb/s using partially phase-correlated short pulses. In relation to the field of quantum key distribution, our results confirm the gain-switched laser diode as a suitable light source, capable of providing phase-randomized coherent pulses at a clock rate of up to 2.5?GHz.

  20. Resistive switching phenomena in TiO{sub x} nanoparticle layers for memory applications

    SciTech Connect (OSTI)

    Goren, Emanuelle; Tsur, Yoed; Ungureanu, Mariana; Zazpe, Raul; Rozenberg, Marcelo; Hueso, Luis E.; Casanova, Flix; Stoliar, Pablo

    2014-10-06

    Electrical characteristics of a Co/ TiO{sub x}/Co resistive memory device, fabricated by two different methods, are reported. In addition to crystalline TiO{sub 2} layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO{sub x} nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.

  1. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches

    SciTech Connect (OSTI)

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

    2014-09-15

    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ?40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  2. Methods and apparatus for optical switching using electrically movable optical fibers

    DOE Patents [OSTI]

    Peterson, Kenneth A.

    2007-03-13

    Methods and apparatuses for electrically controlled optical switches are presented. An electrically controlled optical switch includes a fixture formed using a laminated dielectric material, a first optical fiber having a fixed segment supported by the fixture and a movable segment extending into a cavity, a second optical fiber having a fixed segment supported by the fixture and an extended segment where an optical interconnect may be established between the first optical fiber and the second optical fiber, and a first electrical actuator functionally coupled to the fixture and the first fiber which alters a position of the moveable segment, based upon a control signal, for changing a state of the optical interconnect between one of two states.

  3. Switching coordination of distributed dc-dc converters for highly efficient photovoltaic power plants

    DOE Patents [OSTI]

    Agamy, Mohammed; Elasser, Ahmed; Sabate, Juan Antonio; Galbraith, Anthony William; Harfman Todorovic, Maja

    2014-09-09

    A distributed photovoltaic (PV) power plant includes a plurality of distributed dc-dc converters. The dc-dc converters are configured to switch in coordination with one another such that at least one dc-dc converter transfers power to a common dc-bus based upon the total system power available from one or more corresponding strings of PV modules. Due to the coordinated switching of the dc-dc converters, each dc-dc converter transferring power to the common dc-bus continues to operate within its optimal efficiency range as well as to optimize the maximum power point tracking in order to increase the energy yield of the PV power plant.

  4. Utility-Interconnected Photovoltaic Systems: Evaluating the Rationale for the Utility-Accessible External Disconnect Switch

    SciTech Connect (OSTI)

    Coddington, M.; Margolis, R.M.; Aabakken, J.

    2008-01-01

    The utility-accessible alternating current (AC) external disconnect switch (EDS) for distributed generators, including photovoltaic (PV) systems, is a hardware feature that allows a utility?s employees to manually disconnect a customer-owned generator from the electricity grid. This paper examines the utility-accessible EDS debate in the context of utility-interactive PV systems for residential and small commercial installations. It also evaluates the rationale for EDS requirements.

  5. A switched capacitor array based system for high-speed calorimetry

    SciTech Connect (OSTI)

    Levi, M.; Bebek, C.; Ely, R.; Jared, R.; Kipnis, I.; Kirsten, F.; Kleinfelder, S.; Merrick, T.; Milgrome, O.

    1991-12-01

    A sixteen channel analog transient recorder with 256 cells per channel has been fabricated as an integrated circuit. The circuit uses switched capacitor array technology to achieve simultaneous read/write capability and twelve bit dynamic range. Combined with highly parallel analog-to-digital converter and readout control circuitry being developed this system should satisfy the demanding electronics requirements for calorimeter detectors at the SSC. The system design and test results are presented.

  6. Identifying Opportunities and Impacts of Fuel Switching in the Industrial Sector

    SciTech Connect (OSTI)

    Jain, Ramesh C.; Jamison, Keith; Thomas, Daniel E.

    2006-08-01

    The underlying purpose of this white paper is to examine fuel switching opportunities in the U.S. industrial sector and make strategic recommendationsleading to application of the best available technologies and development of new technologiesthat will introduce fuel use flexibility as an economically feasible option for plant operators, as a means to condition local fuel demands and a hedge against the local rises in fuel prices.

  7. Towards Understanding Electronic Switching in Magnets | U.S. DOE Office of

    Office of Science (SC) Website

    Science (SC) Understanding Electronic Switching in Magnets Basic Energy Sciences (BES) BES Home About Research Facilities Science Highlights Benefits of BES Funding Opportunities Basic Energy Sciences Advisory Committee (BESAC) Community Resources Contact Information Basic Energy Sciences U.S. Department of Energy SC-22/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3081 F: (301) 903-6594 E: Email Us More Information » 09.01.13 Towards Understanding

  8. Fundamental New Insight Into Material for Optical-Switching | U.S. DOE

    Office of Science (SC) Website

    Office of Science (SC) Fundamental New Insight Into Material for Optical-Switching Basic Energy Sciences (BES) BES Home About Research Facilities Science Highlights Benefits of BES Funding Opportunities Basic Energy Sciences Advisory Committee (BESAC) Community Resources Contact Information Basic Energy Sciences U.S. Department of Energy SC-22/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3081 F: (301) 903-6594 E: Email Us More Information » 09.01.13

  9. Table A58. Capability to Switch from LPG to Alternative Energy Sources by

    U.S. Energy Information Administration (EIA) Indexed Site

    8. Capability to Switch from LPG to Alternative Energy Sources by" " Industry Group, Selected Industries, and Selected Characteristics, 1991" " (Estimates in Thousand Barrels)" ,," LPG",,," Alternative Types of Energy(b)" ,,"-","-","-------------","-","-","-","-","-","-","-","RSE" ,,"Total","

  10. Table A67. Capability to Switch from Electricity to Alternative Energy Source

    U.S. Energy Information Administration (EIA) Indexed Site

    7. Capability to Switch from Electricity to Alternative Energy Sources" " by Industry Group, Selected Industries, and Selected Characteristics," " 1994: Part 1" " (Estimates in Million Kilowatthours)" ,,,"Electricity Receipts",,,," Alternative Types of Energy(b)" ,,,,,,,,,,"Coal Coke",,"RSE" "SIC"," ","Total","

  11. Get Current: Switch on Clean Energy Coloring Book | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Coloring Book Get Current: Switch on Clean Energy Coloring Book Below is information about the student activity/lesson plan from your search. Grades K-4 Subject Energy Basics Summary Kids can be part of the Clean Energy Generation: This coloring book teaches them about renewable energies such as wind, water and solar, as well as good habits in energy efficiency to practice at home. (Available in both English and Spanish.) Curriculum Science, Language Arts Plan Time Varies by activity Materials

  12. Fundamental Frequency Switching Control of Seven-Level Hybrid Cascaded H-bridge Multilevel Inverter

    SciTech Connect (OSTI)

    Du, Zhong; Chiasson, John N; Ozpineci, Burak; Tolbert, Leon M

    2009-01-01

    This paper presents a cascaded H-bridge multilevel inverter that can be implemented using only a single dc power source and capacitors. Standard cascaded multilevel inverters require n dc sources for 2n + 1 levels. Without requiring transformers, the scheme proposed here allows the use of a single dc power source (e.g., a battery or a fuel cell stack) with the remaining n-1 dc sources being capacitors, which is referred to as hybrid cascaded H-bridge multilevel inverter (HCMLI) in this paper. It is shown that the inverter can simultaneously maintain the dc voltage level of the capacitors and choose a fundamental frequency switching pattern to produce a nearly sinusoidal output. HCMLI using only a single dc source for each phase is promising for high-power motor drive applications as it significantly decreases the number of required dc power supplies, provides high-quality output power due to its high number of output levels, and results in high conversion efficiency and low thermal stress as it uses a fundamental frequency switching scheme. This paper mainly discusses control of seven-level HCMLI with fundamental frequency switching control and how its modulation index range can be extended using triplen harmonic compensation.

  13. Computational Structural Mechanics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    load-2 TRACC RESEARCH Computational Fluid Dynamics Computational Structural Mechanics Transportation Systems Modeling Computational Structural Mechanics Overview of CSM Computational structural mechanics is a well-established methodology for the design and analysis of many components and structures found in the transportation field. Modern finite-element models (FEMs) play a major role in these evaluations, and sophisticated software, such as the commercially available LS-DYNA® code, is

  14. Monroe Thomas, Mechanical Technician

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and endstation moves. Though he's training another mechanical technician to operate the crane, it's Monroe who is called upon for critical moves. He plays a key role in...

  15. Growth and self-assembly of BaTiO{sub 3} nanocubes for resistive switching memory cells

    SciTech Connect (OSTI)

    Chu, Dewei, E-mail: D.Chu@unsw.edu.au [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Lin, Xi; Younis, Adnan [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Li, Chang Ming [Chongqing Key Lab for Advanced Materials and Clean Energies of Techonologies Dean, Institute for Clean Energy and Advanced Materials, Southwest University, Chongqing (China); Dang, Feng [Research Center for Materials Back Casting Technology (MBT Center), Nagoya University, Nagoya 464-8603 (Japan); Li, Sean [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia)

    2014-06-01

    In this work, the self-assembled BaTiO{sub 3} nanocubes based resistive switching memory capacitors are fabricated with hydrothermal and drop-coating approaches. The device exhibits excellent bipolar resistance switching characteristics with ON/OFF ratio of 5870, better reliability and stability over various polycrystalline BaTiO{sub 3} nanostructures. It is believed that the inter cube junctions is responsible for such a switching behaviour and it can be described by the filament model. The effect of film thickness on switching ratio (ON/OFF) was also investigated in details. - Graphical abstract: This work describes a novel resistive switching memory cell based on self-assembled BaTiO{sub 3} nanocubes. - Highlights: BaTiO{sub 3} nanocubes were prepared by one step facile hydrothermal method. Self-assembled BaTiO{sub 3} nanocubes thin films were obtained by drop-coating approach. The BaTiO{sub 3} nanocubes show excellent resistive switching properties for memory applications.

  16. Effect of the top electrode materials on the resistive switching characteristics of TiO{sub 2} thin film

    SciTech Connect (OSTI)

    Oh, Sang Chul; Jung, Ho Yong; Lee, Heon

    2011-06-15

    Various metals, such as Pt, stainless steel (SUS), Al, Ni, and Ti, were used as a top electrode (TE) to evaluate the dependency of the resistive switching characteristics on the TE of the metal/TiO{sub 2}/Pt structure. The variation of the chemical composition of TiO{sub 2} in the metal/TiO{sub 2}/Pt structure before and after switching was examined to identify the factors affecting the resistive switching characteristics of the samples with various TE materials. In the case of TE/TiO{sub 2}/Pt structures showing unstable resistive switching behavior, e.g., those with the Al, Ni, and Ti TEs, secondary ion mass spectrometry revealed an increase in the oxygen concentration at the interface area between the TE metal and TiO{sub 2}. This suggests that the oxidation reaction at the interface between the TE metal and TiO{sub 2} might cause the TE/TiO{sub 2}/Pt structure to exhibit unstable resistive switching characteristics. According to these results, the oxidation reaction at the interface between the metal TE and TiO{sub 2} thin film is a primary factor affecting the resistive switching characteristics of TiO{sub 2}-based Resistive Random Access Memory devices.

  17. Resistive switching in ultra-thin La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrRuO{sub 3} superlattices

    SciTech Connect (OSTI)

    Jammalamadaka, S. Narayana; Vanacken, Johan; Moshchalkov, V. V.

    2014-07-21

    Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers with macroscopic world. Here, we report the study of the resistive switching characteristics of a hybrid structure made out of a superlattice with ultrathin layers of two ferromagnetic metallic oxides, La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) and SrRuO{sub 3} (SRO). Bipolar resistive switching memory effects are measured on these LSMO/SRO superlattices, and the observed switching is explainable by ohmic and space charge-limited conduction laws. It is evident from the endurance characteristics that the on/off memory window of the cell is greater than 14, which indicates that this cell can reliably distinguish the stored information between high and low resistance states. The findings may pave a way to the construction of devices based on nonvolatile resistive memory effects.

  18. Observations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    sulla Fusione, Corso Stati Uniti, 4 35127 Padova, Italy * 2 Istituto Nazionale di Fisica della Materia, UdR Padova, Italy 3 Department of Physics, University of ...

  19. Observation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    P. Martin Consorzio RFX, Associazione EURATOM-ENEA sulla Fusione, Corso Stati Uniti 4, 35127 Padova, Italy and Istituto Nazionale Fisica della Materia, INFM, Padova, Italy G. ...

  20. Observation

    Office of Scientific and Technical Information (OSTI)

    to an Orbital-Selective Mott Phase in A x Fe 2-y Se 2 (AK, Rb) Superconductors M. Yi, 1, 2 D. H. Lu, 3 R. Yu, 4 S. C. Riggs, 1, 2 J.-H. Chu, 1, 2 B. Lv, 5 Z. Liu, 1, 2 M. Lu,...

  1. Mechanical code comparator

    DOE Patents [OSTI]

    Peter, Frank J.; Dalton, Larry J.; Plummer, David W.

    2002-01-01

    A new class of mechanical code comparators is described which have broad potential for application in safety, surety, and security applications. These devices can be implemented as micro-scale electromechanical systems that isolate a secure or otherwise controlled device until an access code is entered. This access code is converted into a series of mechanical inputs to the mechanical code comparator, which compares the access code to a pre-input combination, entered previously into the mechanical code comparator by an operator at the system security control point. These devices provide extremely high levels of robust security. Being totally mechanical in operation, an access control system properly based on such devices cannot be circumvented by software attack alone.

  2. Radiation and bias switch-induced charge dynamics in Al{sub 2}O{sub 3}-based metal-oxide-semiconductor structures

    SciTech Connect (OSTI)

    Sambuco Salomone, L. Kasulin, A.; Carbonetto, S. H.; Garcia-Inza, M. A.; Redin, E. G.; Berbeglia, F.; Lipovetzky, J.; Faign, A.; Campabadal, F.

    2014-11-07

    Charge trapping dynamics induced by exposition to ?-ray ({sup 60}Co) radiation and bias switching in MOS capacitors with atomic layer deposited Al{sub 2}O{sub 3} as insulating layer was studied. Electrical characterization prior to irradiation showed voltage instabilities due to electron tunneling between the substrate and preexisting defects inside the dielectric layer. Real-time capacitance-voltage (C-V) measurements during irradiation showed two distinct regimes: For short times, the response is strongly bias dependent and linear with log(t), consistent with electron trapping/detrapping; for long times, the voltage shift is dominated by the radiation-induced hole capture being always negative and linear with dose. A simple model that takes into account these two phenomena can successfully reproduce the observed results.

  3. Field observations and lessons learned

    SciTech Connect (OSTI)

    Nielsen, Joh B

    2010-01-01

    This presentation outlines observations and lessons learned from the Megaports program. It provides: (1) details of field and technical observations collected during LANL field activities at ports around the world and details of observations collected during radiation detections system testing at Los Alamos National Laboratory; (2) provides suggestions for improvement and efficiency; and (3) discusses possible program execution changes for more effective operations.

  4. State observer for synchronous motors

    DOE Patents [OSTI]

    Lang, Jeffrey H. (Waltham, MA)

    1994-03-22

    A state observer driven by measurements of phase voltages and currents for estimating the angular orientation of a rotor of a synchronous motor such as a variable reluctance motor (VRM). Phase voltages and currents are detected and serve as inputs to a state observer. The state observer includes a mathematical model of the electromechanical operation of the synchronous motor. The characteristics of the state observer are selected so that the observer estimates converge to the actual rotor angular orientation and velocity, winding phase flux linkages or currents.

  5. Rotary mechanical latch

    DOE Patents [OSTI]

    Spletzer, Barry L.; Martinez, Michael A.; Marron, Lisa C.

    2012-11-13

    A rotary mechanical latch for positive latching and unlatching of a rotary device with a latchable rotating assembly having a latching gear that can be driven to latched and unlatched states by a drive mechanism such as an electric motor. A cam arm affixed to the latching gear interfaces with leading and trailing latch cams affixed to a flange within the drive mechanism. The interaction of the cam arm with leading and trailing latch cams prevents rotation of the rotating assembly by external forces such as those due to vibration or tampering.

  6. Electronic door locking mechanism

    DOE Patents [OSTI]

    Williams, G.L.; Kirby, P.G.

    1997-10-21

    The invention is a motorized linkage for engaging a thumb piece in a door mechanism. The device has an exterior lock assembly with a small battery cell and combination lock. Proper entry by a user of a security code allows the battery to operate a small motor within the exterior lock assembly. The small motor manipulates a cam-plunger which moves an actuator pin into a thumb piece. The user applies a force on to the thumb piece. This force is transmitted by the thumb piece to a latch engagement mechanism by the actuator pin. The latch engagement mechanism operates the door latch. 6 figs.

  7. Electronic door locking mechanism

    DOE Patents [OSTI]

    Williams, Gary Lin; Kirby, Patrick Gerald

    1997-01-01

    The invention is a motorized linkage for engaging a thumb piece in a door mechanism. The device has an exterior lock assembly with a small battery cell and combination lock. Proper entry by a user of a security code allows the battery to operate a small motor within the exterior lock assembly. The small motor manipulates a cam-plunger which moves an actuator pin into a thumb piece. The user applies a force on to the thumb piece. This force is transmitted by the thumb piece to a latch engagement mechanism by the actuator pin. The latch engagement mechanism operates the door latch.

  8. Failure mechanisms in MEMS. (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Failure mechanisms in MEMS. Citation Details In-Document Search Title: Failure mechanisms in MEMS. MEMS components by their very nature have different and unique failure mechanisms than their macroscopic counterparts. This paper discusses failure mechanisms observed in various MEMS components and technologies. MEMS devices fabricated using bulk and surface micromachining process technologies are emphasized. MEMS devices offer uniqueness in their application, fabrication, and functionality. Their

  9. The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems

    SciTech Connect (OSTI)

    Guo, Jiquan; /SLAC

    2009-03-20

    In the past decades, there has been increasing interest in pulsed high power RF sources for building high-gradient high-energy particle accelerators. Passive RF pulse compression systems have been used in many applications to match the available RF sources to the loads requiring higher RF power but a shorter pulse. Theoretically, an active RF pulse compression system has the advantage of higher efficiency and compactness over the passive system. However, the key component for such a system an element capable of switching hundreds of megawatts of RF power in a short time compared to the compressed pulse width is still an open problem. In this dissertation, we present a switch module composed of an active window based on the bulk effects in semiconductor, a circular waveguide three-port network and a movable short plane, with the capability to adjust the S-parameters before and after switching. The RF properties of the switch module were analyzed. We give the scaling laws of the multiple-element switch systems, which allow the expansion of the system to a higher power level. We present a novel overmoded design for the circular waveguide three-port network and the associated circular-to-rectangular mode-converter. We also detail the design and synthesis process of this novel mode-converter. We demonstrate an electrically controlled ultra-fast high power X-band RF active window built with PIN diodes on high resistivity silicon. The window is capable of handling multi-megawatt RF power and can switch in 2-300ns with a 1000A current driver. A low power active pulse compression experiment was carried out with the switch module and a 375ns resonant delay line, obtaining 8 times compression gain with a compression ratio of 20.

  10. Phase Field Fracture Mechanics.

    SciTech Connect (OSTI)

    Robertson, Brett Anthony

    2015-11-01

    For this assignment, a newer technique of fracture mechanics using a phase field approach, will be examined and compared with experimental data for a bend test and a tension test. The software being used is Sierra Solid Mechanics, an implicit/explicit finite element code developed at Sandia National Labs in Albuquerque, New Mexico. The bend test experimental data was also obtained at Sandia Labs while the tension test data was found in a report online from Purdue University.

  11. NS&T MANAGEMENT OBSERVATIONS

    SciTech Connect (OSTI)

    Gianotto, David

    2014-06-01

    The INL Management Observation Program (MOP) is designed to improve managers and supervisors understanding of work being performed by employees and the barriers impacting their success. The MOP also increases workers understanding of managements expectations as they relate to safety, security, quality, and work performance. Management observations (observations) are designed to improve the relationship and trust between employees and managers through increased engagement and interactions between managers and researchers in the field. As part of continuous improvement, NS&T management took initiative to focus on the participation and quality of observations in FY 14. This quarterly report is intended to (a) summarize the participation and quality of managements observations, (b) assess observations for commonalities or trends related to facility or process barriers impacting research, and (c) provide feedback and make recommendations for improvements NS&Ts MOP.

  12. NS&T Management Observations

    SciTech Connect (OSTI)

    Gianotto, David

    2014-09-01

    The INL Management Observation Program (MOP) is designed to improve managers and supervisors understanding of work being performed by employees and the barriers impacting their success. The MOP also increases workers understanding of managements expectations as they relate to safety, security, quality, and work performance. Management observations (observations) are designed to improve the relationship and trust between employees and managers through increased engagement and interactions between managers and researchers in the field. As part of continuous improvement, NS&T management took initiative to focus on the participation and quality of observations in FY 14. This quarterly report is intended to (a) summarize the participation and quality of managements observations, (b) assess observations for commonalities or trends related to facility or process barriers impacting research, and (c) provide feedback and make recommendations for improvements NS&Ts MOP.

  13. Method of pedestal and common-mode noise correction for switched-capacitor analog memories

    DOE Patents [OSTI]

    Britton, C.L.

    1996-12-31

    A method and apparatus are disclosed for correcting common-mode noise and pedestal noise in a multichannel array of switched-capacitor analog memories wherein each analog memory is connected to an associated analog-to-digital converter. The apparatus comprises a single differential element in two different embodiments. In a first embodiment, the differential element is a reference analog memory connected to a buffer. In the second embodiment, the differential element is a reference analog memory connected to a reference analog-to-digital connected to an array of digital summing circuits. 4 figs.

  14. 'Exotic' material is like a switch when super thin > Archived News Stories

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    > The Energy Materials Center at Cornell 'Exotic' material is like a switch when super thin April 17th, 2014 › By Anne Ju Hanfei Wei An artist's rendering of the thickness-driven, metal-insulator transition in sub-nanometer films of a lanthanum nickelate. Nickel atoms are shown in gold, oxygen atoms in white, and lanthanum atoms in red, and metallicity is achieved in going from two to three atomic layers. Ever-shrinking electronic devices could get down to atomic dimensions with the

  15. Method of pedestal and common-mode noise correction for switched-capacitor analog memories

    DOE Patents [OSTI]

    Britton, Charles L. (Alcoa, TN)

    1996-01-01

    A method and apparatus for correcting common-mode noise and pedestal noise in a multichannel array of switched-capacitor analog memories wherein each analog memory is connected to an associated analog-to-digital converter. The apparatus comprises a single differential element in two different embodiments. In a first embodiment, the differential element is a reference analog memory connected to a buffer. In the second embodiment, the differential element is a reference analog memory connected to a reference analog-to-digital connected to an array of digital summing circuits.

  16. Method of pedestal and common-mode noise correction for switched-capacitor analog memories

    DOE Patents [OSTI]

    Britton, Charles L. (Alcoa, TN)

    1997-01-01

    A method and apparatus for correcting common-mode noise and pedestal noise in a multichannel array of switched-capacitor analog memories wherein each analog memory is connected to an associated analog-to-digital converter. The apparatus comprises a single differential element in two different embodiments. In a first embodiment, the differential element is a reference analog memory connected to a buffer. In the second embodiment, the differential dement is a reference analog memory connected to a reference analog-to-digital connected to an array of digital summing circuits.

  17. Hardware enabled performance counters with support for operating system context switching

    DOE Patents [OSTI]

    Salapura, Valentina; Wisniewski, Robert W.

    2015-06-30

    A device for supporting hardware enabled performance counters with support for context switching include a plurality of performance counters operable to collect information associated with one or more computer system related activities, a first register operable to store a memory address, a second register operable to store a mode indication, and a state machine operable to read the second register and cause the plurality of performance counters to copy the information to memory area indicated by the memory address based on the mode indication.

  18. Development of a High-Speed Static Switch for Distributed Energy and Microgrid Applications

    SciTech Connect (OSTI)

    Kroposki, B.; Pink, C.; Lynch, J.; John, V.; Meor Daniel, S.; Benedict, E.; Vihinen, I.

    2007-01-01

    Distributed energy resources can provide power to local loads in the electric distribution system and benefits such as improved reliability. Microgrids are intentional islands formed at a facility or in an electrical distribution system that contains at least one distributed resource and associated loads. Microgrids that operate both electrical generation and loads in a coordinated manner can offer additional benefits to the customer and local utility. The loads and energy sources can be disconnected from and reconnected to the area or local utility with minimal disruption to the local loads, thereby improving reliability. This paper details the development and testing of a highspeed static switch for distributed energy and microgrid applications.

  19. Electron beam magnetic switch for a plurality of free electron lasers

    DOE Patents [OSTI]

    Schlitt, Leland G. (Livermore, CA)

    1984-01-01

    Apparatus for forming and utilizing a sequence of electron beam segments, each of the same temporal length (substantially 15 nsec), with consecutive beams being separated by a constant time interval of the order of 3 nsec. The beam sequence is used for simultaneous inputs to a plurality of wiggler magnet systems that also accept the laser beams to be amplified by interaction with the co-propagating electron beams. The electron beams are arranged substantially in a circle to allow proper distribution of and simultaneous switching out of the beam segments to their respective wiggler magnets.

  20. ARM - Surface Aerosol Observing System

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2009-2010 Shouxian, China, 2008 Black Forest, Germany, 2007 Niamey, Niger, 2006 Point Reyes, California, 2005 Surface Aerosol Observing System The ARM Mobile Facility (AMF) is...

  1. Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect

    SciTech Connect (OSTI)

    Kanai, S.; Nakatani, Y.; Yamanouchi, M.; Ikeda, S.; Sato, H.; Matsukura, F.; Ohno, H.

    2014-05-26

    We propose and demonstrate a scheme for magnetization switching in magnetic tunnel junctions, in which two successive voltage pulses are applied to utilize both spin-transfer torque and electric field effect. Under this switching scheme, a CoFeB/MgO magnetic tunnel junction with perpendicular magnetic easy axis is shown to switch faster than by spin-transfer torque alone and more reliably than that by electric fields alone.

  2. Mechanically latchable tiltable platform for forming micromirrors and micromirror arrays

    DOE Patents [OSTI]

    Garcia, Ernest J. (Albuquerque, NM); Polosky, Marc A. (Tijeras, NM); Sleefe, Gerard E. (Cedar Crest, NM)

    2006-12-12

    A microelectromechanical (MEM) apparatus is disclosed which includes a platform that can be electrostatically tilted from being parallel to a substrate on which the platform to being tilted at an angle of 1 20 degrees with respect to the substrate. Once the platform has been tilted to a maximum angle of tilt, the platform can be locked in position using an electrostatically-operable latching mechanism which engages a tab protruding below the platform. The platform has a light-reflective upper surface which can be optionally coated to provide an enhanced reflectivity and form a micromirror. An array of such micromirrors can be formed on a common substrate for applications including optical switching (e.g. for fiber optic communications), optical information processing, image projection displays or non-volatile optical memories.

  3. Helium in chirped laser fields as a time-asymmetric atomic switch

    SciTech Connect (OSTI)

    Kaprlov-?nsk, Petra Ruth; Moiseyev, Nimrod

    2014-07-07

    Tuning the laser parameters exceptional points in the spectrum of the dressed laser helium atom are obtained. The weak linearly polarized laser couples the ground state and the doubly excited P-states of helium. We show here that for specific chirped laser pulses that encircle an exceptional point one can get the time-asymmetric phenomenon, where for a negative chirped laser pulse the ground state is transformed into the doubly excited auto-ionization state, while for a positive chirped laser pulse the resonance state is not populated and the neutral helium atoms remains in the ground state as the laser pulse is turned off. Moreover, we show that the results are very sensitive to the closed contour we choose. This time-asymmetric state exchange phenomenon can be considered as a time-asymmetric atomic switch. The optimal time-asymmetric switch is obtained when the closed loop that encircles the exceptional point is large, while for the smallest loops, the time-asymmetric phenomenon does not take place. A systematic way for studying the effect of the chosen closed contour that encircles the exceptional point on the time-asymmetric phenomenon is proposed.

  4. ION MANIPULATIONS IN STRUCTURES FOR LOSSLESS ION MANIPULATIONS (SLIM): COMPUTATIONAL EVALUATION OF A 90o TURN AND A SWITCH

    SciTech Connect (OSTI)

    Garimella, Venkata BS; Ibrahim, Yehia M.; Webb, Ian K.; Ipsen, Andreas B.; Chen, Tsung-Chi; Tolmachev, Aleksey V.; Baker, Erin Shammel; Anderson, Gordon A.; Smith, Richard D.

    2015-08-19

    The process of redirecting ions through 90o turns and ‘tee’ switches utilizing Structures for Lossless Ion Manipulations (SLIM) was evaluated using theoretical and simulation methods at 4 Torr pressure. SIMION simulations were used to optimize and evaluate conditions for performing turns without loss of signal intensity or ion mobility resolving power. Fundamental considerations indicated that the “race track” effect during ion turns may incur only small losses to the ion mobility resolving power at 4 Torr pressure for the typical plume widths predicted in an optimized SLIM ‘tee’ switch design. The dynamic switching of ions into orthogonal channels was also evaluated using SIMION ion trajectory simulations, and achieved similar performance. Simulation results were in close agreement with experimental results and were used to refine SLIM designs and applied potentials for their use.

  5. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOE Patents [OSTI]

    Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2015-09-08

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  6. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    DOE Patents [OSTI]

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  7. Residential Mechanical Precooling

    SciTech Connect (OSTI)

    German, a.; Hoeschele, M.

    2014-12-01

    This research conducted by the Alliance for Residential Building Innovation team evaluated mechanical air conditioner pre-cooling strategies in homes throughout the United States. EnergyPlus modeling evaluated two homes with different performance characteristics in seven climates. Results are applicable to new construction homes and most existing homes built in the last 10 years, as well as fairly efficient retrofitted homes.

  8. Distant Observer - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Thermal Solar Thermal Energy Analysis Energy Analysis Find More Like This Return to Search Distant Observer Tool Quickly Identifies Costly Flaws in Concentrating Solar Power (CSP) Fields National Renewable Energy Laboratory Contact NREL About This Technology Technology Marketing Summary As we pursue efforts to lower the capital and installation costs of parabolic trough solar collectors, it is essential to maintain high optical performance. The Distant Observer (DO) tool, developed by

  9. Thermo-mechanical characterization of silicone foams

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rangaswamy, Partha; Smith, Nickolaus A.; Cady, Carl M.; Lewis, Matthew W.

    2015-10-01

    Cellular solids such as elastomeric foams are used in many structural applications to absorb and dissipate energy, due to their light weight (low density) and high energy absorption capability. In this paper we will discuss foams derived from S5370, a silicone foam formulation developed by Dow Corning. In the application presented, the foam is consolidated into a cushion component of constant thickness but variable density. A mechanical material model developed by Lewis (2013), predicts material response, in part, as a function of relative density. To determine the required parameters for this model we have obtained the mechanical response in compressionmorefor ambient, cold and hot temperatures. The variable density cushion provided samples sufficient samples so that the effect of sample initial density on the mechanical response could be studied. The mechanical response data showed extreme sensitivity to relative density. We also observed at strains corresponding to 1 MPa a linear relationship between strain and initial density for all temperatures. Samples taken from parts with a history of thermal cycling demonstrated a stiffening response that was a function of temperature, with the trend of more stiffness as temperature increased above ambient. This observation is in agreement with the entropic effects on the thermo-mechanical behavior of silicone polymers. In this study, we present the experimental methods necessary for the development of a material model, the testing protocol, analysis of test data, and a discussion of load (stress) and gap (strain) as a function of sample initial densities and temperaturesless

  10. Thermo-mechanical characterization of silicone foams

    SciTech Connect (OSTI)

    Rangaswamy, Partha; Smith, Nickolaus A.; Cady, Carl M.; Lewis, Matthew W.

    2015-10-01

    Cellular solids such as elastomeric foams are used in many structural applications to absorb and dissipate energy, due to their light weight (low density) and high energy absorption capability. In this paper we will discuss foams derived from S5370, a silicone foam formulation developed by Dow Corning. In the application presented, the foam is consolidated into a cushion component of constant thickness but variable density. A mechanical material model developed by Lewis (2013), predicts material response, in part, as a function of relative density. To determine the required parameters for this model we have obtained the mechanical response in compression for ambient, cold and hot temperatures. The variable density cushion provided samples sufficient samples so that the effect of sample initial density on the mechanical response could be studied. The mechanical response data showed extreme sensitivity to relative density. We also observed at strains corresponding to 1 MPa a linear relationship between strain and initial density for all temperatures. Samples taken from parts with a history of thermal cycling demonstrated a stiffening response that was a function of temperature, with the trend of more stiffness as temperature increased above ambient. This observation is in agreement with the entropic effects on the thermo-mechanical behavior of silicone polymers. In this study, we present the experimental methods necessary for the development of a material model, the testing protocol, analysis of test data, and a discussion of load (stress) and gap (strain) as a function of sample initial densities and temperatures

  11. Efficacy of fixed filtration for rapid kVp-switching dual energy x-ray systems

    SciTech Connect (OSTI)

    Yao, Yuan; Wang, Adam S.; Pelc, Norbert J.; Department of Radiology, Stanford University, Stanford, California 94305; Department of Electrical Engineering, Stanford University, Stanford, California 94305

    2014-03-15

    Purpose: Dose efficiency of dual kVp imaging can be improved if the two beams are filtered to remove photons in the common part of their spectra, thereby increasing spectral separation. While there are a number of advantages to rapid kVp-switching for dual energy, it may not be feasible to have two different filters for the two spectra. Therefore, the authors are interested in whether a fixed added filter can improve the dose efficiency of kVp-switching dual energy x-ray systems. Methods: The authors hypothesized that a K-edge filter would provide the energy selectivity needed to remove overlap of the spectra and hence increase the precision of material separation at constant dose. Preliminary simulations were done using calcium and water basis materials and 80 and 140 kVp x-ray spectra. Precision of the decomposition was evaluated based on the propagation of the Poisson noise through the decomposition function. Considering availability and cost, the authors chose a commercial Gd{sub 2}O{sub 2}S screen as the filter for their experimental validation. Experiments were conducted on a table-top system using a phantom with various thicknesses of acrylic and copper and 70 and 125 kVp x-ray spectra. The authors kept the phantom exposure roughly constant with and without filtration by adjusting the tube current. The filtered and unfiltered raw data of both low and high energy were decomposed into basis material and the variance of the decomposition for each thickness pair was calculated. To evaluate the filtration performance, the authors measured the ratio of material decomposition variance with and without filtration. Results: Simulation results show that the ideal filter material depends on the object composition and thickness, and ranges across the lanthanide series, with higher atomic number filters being preferred for more attenuating objects. Variance reduction increases with filter thickness, and substantial reductions (40%) can be achieved with a 2 loss in intensity. The authors experimental results validate the simulations, yet were overall slightly worse than expectation. For large objects, conventional (non-K-edge) beam hardening filters perform well. Conclusions: This study demonstrates the potential of fixed K-edge filtration to improve the dose efficiency and material decomposition precision for rapid kVp-switching dual energy systems.

  12. Local probing of ferroelectric and ferroelastic switching through stress-mediated piezoelectric spectroscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Edwards, David; Bastani, Yaser; Cao, Ye; Chen, Long -Qing; Kalinin, Sergei V.; Kumar, Amit; Bassiri-Gharb, Nazanin; Brewer, Steven

    2016-01-19

    The role of local strains is fundamental to the large effective piezoelectric and ferroelectric response of thin films. Therefore a method to investigate local strain-induced phenomena is imperative. Here, pressure induced domain reorganization is reported in lead zirconate titanate films with composition near the morphotropic phase boundary. An approach is thus demonstrated to simultaneously study the role of applied mechanical pressure on multiple local properties of the film. In particular, the modification of hysteresis loops collected at different tip pressures is consistent with first mostly ferroelastic and then ferroelectric dominated reorientation of domains under increasing applied pressure. The pressure inducedmore » domain writing is also investigated through phase field simulations where the applied pressure is generally found to increase the in-plane polarization of the domains with respect to the out-of-plane component, corroborating the experimental observations. The approach developed here has the potential to explore other hysteretic phenomena and phase transitions in a spatially resolved manner with varying local pressure.« less

  13. In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO{sub 2}/TiN cells

    SciTech Connect (OSTI)

    Sowinska, Malgorzata Bertaud, Thomas; Walczyk, Damian; Calka, Pauline; Walczyk, Christian; Thiess, Sebastian; Alff, Lambert; Schroeder, Thomas

    2014-05-28

    In this study, direct experimental materials science evidence of the important theoretical prediction for resistive random access memory (RRAM) technologies that a critical amount of oxygen vacancies is needed to establish stable resistive switching in metal-oxide-metal samples is presented. In detail, a novel in-operando hard X-ray photoelectron spectroscopy technique is applied to non-destructively investigates the influence of the current compliance and direct current voltage sweep cycles on the Ti/HfO{sub 2} interface chemistry and physics of resistive switching Ti/HfO{sub 2}/TiN cells. These studies indeed confirm that current compliance is a critical parameter to control the amount of oxygen vacancies in the conducting filaments in the oxide layer during the RRAM cell operation to achieve stable switching. Furthermore, clear carbon segregation towards the Ti/HfO{sub 2} interface under electrical stress is visible. Since carbon impurities impact the oxygen vacancy defect population under resistive switching, this dynamic carbon segregation to the Ti/HfO{sub 2} interface is suspected to negatively influence RRAM device endurance. Therefore, these results indicate that the RRAM materials engineering needs to include all impurities in the dielectric layer in order to achieve reliable device performance.

  14. Sierra Mechanics suite

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanics suite - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Fuel Cycle Defense Waste Management Programs Advanced Nuclear

  15. Polarization dependent color switching by extra-ordinary transmission in H-slit plasmonic metasurface

    SciTech Connect (OSTI)

    Mandal, P.; Anantha Ramakrishna, S.; Patil, Raj; Venu Gopal, Achanta

    2013-12-14

    An array of H-shaped subwavelength slits in a plasmonic film has a polarization dependent extra-ordinary transmission due to shape anisotropy. Non-overlapping extra-ordinary transmission bands for the orthogonal linear polarization states of the input light are used to demonstrate a polarization dependent color switch. The fabricated array of submicron sized H-slits on a gold film displayed two transmission bands for the linear x- and y-polarized light at visible (650850 nm) and near-infra-red (11501450 nm) bands, respectively. The relative transmitted light in these two bands can be controlled by changing the linear polarization state of the input radiation from 0 to 90.

  16. Polarization-selective vortex-core switching by tailored orthogonal Gaussian-pulse currents

    SciTech Connect (OSTI)

    Jung, H.; Choi, Y. -S.; Yoo, M. -W.; Im, M. -Y.; Kim, S. -K.

    2010-10-13

    We experimentally demonstrate low-power-consumption vortex-core switching in magnetic nanodisks using tailored rotating magnetic fields produced with orthogonal and unipolar Gaussian-pulse currents. The optimal width of the orthogonal pulses and their time delay are found, from analytical and micromagnetic numerical calculations, to be determined only by the angular eigenfrequency {omega}{sub D} for a given vortex-state disk of polarization p, such that {sigma}=1/{omega}{sub D} and {Delta}t={pi}/2 p/{omega}{sub D} . The estimated optimal pulse parameters are in good agreement with the experimental results. This work lays a foundation for energy-efficient information recording in vortex-core cross-point architecture.

  17. Switch contact device for interrupting high current, high voltage, AC and DC circuits

    DOE Patents [OSTI]

    Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

    2005-01-04

    A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

  18. Ultrahigh density ferroelectric storage and lithography by high order ferroic switching

    DOE Patents [OSTI]

    Kalinin, Sergei V. (Knoxville, TN); Baddorf, Arthur P. (Knoxville, TN); Lee, Ho Nyung (Oak Ridge, TN); Shin, Junsoo (Knoxville, TN); Gruverman, Alexei L. (Raleigh, NC); Karapetian, Edgar (Malden, MA); Kachanov, Mark (Arlington, MA)

    2007-11-06

    A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.

  19. Sandia`s network for supercomputing `95: Validating the progress of Asynchronous Transfer Mode (ATM) switching

    SciTech Connect (OSTI)

    Pratt, T.J.; Vahle, O.; Gossage, S.A.

    1996-04-01

    The Advanced Networking Integration Department at Sandia National Laboratories has used the annual Supercomputing conference sponsored by the IEEE and ACM for the past three years as a forum to demonstrate and focus communication and networking developments. For Supercomputing `95, Sandia elected: to demonstrate the functionality and capability of an AT&T Globeview 20Gbps Asynchronous Transfer Mode (ATM) switch, which represents the core of Sandia`s corporate network, to build and utilize a three node 622 megabit per second Paragon network, and to extend the DOD`s ACTS ATM Internet from Sandia, New Mexico to the conference`s show floor in San Diego, California, for video demonstrations. This paper documents those accomplishments, discusses the details of their implementation, and describes how these demonstrations supports Sandia`s overall strategies in ATM networking.

  20. High voltage photo-switch package module having encapsulation with profiled metallized concavities

    DOE Patents [OSTI]

    Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen A

    2015-05-05

    A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces metalized with first metallic layers formed thereon, and encapsulated with a dielectric encapsulation material such as for example epoxy. The first metallic layers are exposed through the encapsulation via encapsulation concavities which have a known contour profile, such as a Rogowski edge profile. Second metallic layers are then formed to line the concavities and come in contact with the first metal layer, to form profiled and metalized encapsulation concavities which mitigate enhancement points at the edges of electrodes matingly seated in the concavities. One or more optical waveguides may also be bonded to the substrate for coupling light into the photo-conductive wafer, with the encapsulation also encapsulating the waveguides.

  1. Solid core dipoles and switching power supplies: Lower cost light sources?

    SciTech Connect (OSTI)

    Benesch, Jay; Philip, Sarin

    2015-05-05

    As a result of improvements in power semiconductors, moderate frequency switching supplies can now provide the hundreds of amps typically required by accelerators with zero-to-peak noise in the kHz region ~ 0.06% in current or voltage mode. Modeling was undertaken using a finite electromagnetic program to determine if eddy currents induced in the solid steel of CEBAF magnets and small supplemental additions would bring the error fields down to the 5ppm level needed for beam quality. The expected maximum field of the magnet under consideration is 0.85 T and the DC current required to produce that field is used in the calculations. An additional 0.1% current ripple is added to the DC current at discrete frequencies 360 Hz, 720 Hz or 7200 Hz. Over the region of the pole within 0.5% of the central integrated BdL the resulting AC field changes can be reduced to less than 1% of the 0.1% input ripple for all frequencies, and a sixth of that at 7200 Hz. Doubling the current, providing 1.5 T central field, yielded the same fractional reduction in ripple at the beam for the cases checked. A small dipole was measured at 60, 120, 360 and 720 Hz in two conditions and the results compared to the larger model for the latter two frequencies with surprisingly good agreement. Thus, for light sources with aluminum vacuum vessels and full energy linac injection, the combination of solid core dipoles and switching power supplies may result in significant cost savings.

  2. Dissecting the cAMP-inducible allosteric switch in protein kinase A RI alpha

    SciTech Connect (OSTI)

    Sjoberg, T.J.; Kornev, A.P.; Taylor, S.S.; /SLAC

    2012-08-23

    The regulatory subunits of cAMP-dependent protein kinase (PKA) are the major receptors of cAMP in most eukaryotic cells. As the cyclic nucleotide binding (CNB) domains release cAMP and bind to the catalytic subunit of PKA, they undergo a major conformational change. The change is mediated by the B/C helix in CNB-A, which extends into one long helix that now separates the two CNB domains and docks onto the surface of the catalytic subunit. We explore here the role of three key residues on the B/C helix that dock onto the catalytic subunit, Arg226, Leu233, and Met 234. By replacing each residue with Ala, we show that each contributes significantly to creating the R:C interface. By also deleting the second CNB domain (CNB-B), we show furthermore that CNB-B is a critical part of the cAMP-induced conformational switch that dislodges the B/C helix from the surface of the catalytic subunit. Without CNB-B the K{sub a} for activation by cAMP increases from 80 to 1000 nM. Replacing any of the key interface residues with Ala reduces the K{sub a} to 25-40 nM. Leu233 and M234 contribute to a hydrophobic latch that binds the B/C helix onto the large lobe of the C-subunit, while Arg226 is part of an electrostatic switch that couples the B/C helix to the phosphate binding cassette where the cAMP docks.

  3. The laser switched linac and development of a high brilliance electron source

    SciTech Connect (OSTI)

    Melissinos, A.C.; Bamber, C.; Blalock, T.; Fry, A.; Wilson, T.

    1991-09-01

    This task originated in 1987 to explore the possibility of accelerating short bursts of electrons by pulsed power. The principal effort of our group was to demonstrate that electrons can be accelerated by picosecond-long electrical pulses which are compressed in a radial transmission line. This goal has new been achieved and our results are presented in this paper. We have achieved a gradient of 45 MV/m across a 250 {mu}m accelerating gap and have accelerated 10{sup 6} electrons in a 1 ps long pulse. The beam emerges from a 500 {mu}m hole and can be refocused to this transverse dimension. The efficiency of the system, is of order {eta} = 2 {times} 10{sup {minus}6} due to the small number of electrons accelerated. If we identify the gap spacing with one half wavelength of the accelerating r.f.,''our device is equivalent to a 600 GHz structure. The principal limitation in the accelerating gradient comes from the H.V. hold-off properties of the semiconductor disks that are used as photoconductive switches. We believe that with better materials a factor of 10 can be gained in the gradient. Similarly, the electron yield can be increased by at least three orders of magnitude if proper photocathodes are used in place of the metallic surface. The more difficult problem is the engineering of a multicell structure using our present design of the single cell. Our plans for the continuation of this work are given. One of the most promising applications of laser switched acceleration is in the operation of a very low emittance electron source. Thus we have turned our attention to this subject, and in particular to building a high brilliance electron source using a superconducting cavity. Also discussed is the possibility of picosecond x-ray sources.

  4. Mechanical behavior simulation of MEMS-based cantilever beam using COMSOL multiphysics

    SciTech Connect (OSTI)

    Acheli, A. Serhane, R.

    2015-03-30

    This paper presents the studies of mechanical behavior of MEMS cantilever beam made of poly-silicon material, using the coupling of three application modes (plane strain, electrostatics and the moving mesh) of COMSOL Multi-physics software. The cantilevers playing a key role in Micro Electro-Mechanical Systems (MEMS) devices (switches, resonators, etc) working under potential shock. This is why they require actuation under predetermined conditions, such as electrostatic force or inertial force. In this paper, we present mechanical behavior of a cantilever actuated by an electrostatic force. In addition to the simplification of calculations, the weight of the cantilever was not taken into account. Different parameters like beam displacement, electrostatics force and stress over the beam have been calculated by finite element method after having defining the geometry, the material of the cantilever model (fixed at one of ends but is free to move otherwise) and his operational space.

  5. Multiphoton photoluminescence contrast in switched Mg:LiNbO{sub 3} and Mg:LiTaO{sub 3} single crystals

    SciTech Connect (OSTI)

    Reichenbach, P., E-mail: philipp.reichenbach@iapp.de; Kmpfe, T.; Thiessen, A.; Haumann, A.; Eng, L. M. [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Str. 1, 01069 Dresden (Germany); Woike, T. [Institut fr Strukturphysik, Technische Universitt Dresden, Zellescher Weg 16, 01069 Dresden (Germany)

    2014-09-22

    We observed a multiphoton luminescence contrast between virgin and single-switched domains in Mg-doped LiNbO{sub 3} (LNO) and LiTaO{sub 3} (LTO) single crystals with different doping levels of 07?mol. % and 08?mol. %, respectively. A luminescence contrast in the range of 3% was measured between as-grown and electrically inverted domain areas in Mg:LNO samples, while the contrast reaches values of up to 30% for the Mg:LTO case. Under annealing, an exponential decay of the domain contrast was observed. The activation energy of about 1?eV being determined for the decay allowed a comparison with reported activation energies of associated defects, clearly illustrating a strong connection between thermal contrast decay and the H{sup +} and Li{sup +}-ion mobility. Finally, performing similar experiments on oxidized samples undoubtedly demonstrated that the origin of the reported luminescence contrast is strongly connected with lithium ions.

  6. Binary and ternary gas mixtures with temperature enhanced diffuse glow discharge characteristics for use in closing switches

    DOE Patents [OSTI]

    Christophorou, Loucas G. (Oak Ridge, TN); Hunter, Scott R. (Oak Ridge, TN)

    1990-01-01

    An improvement to the gas mixture used in diffuse glow discharge closing switches is disclosed which includes binary and ternary gas mixtures which are formulated to exhibit decreasing electron attachment with increasing temperature. This increases the efficiency of the conductance of the glow discharge and further inhibits the formation of an arc.

  7. Binary and ternary gas mixtures with temperature enhanced diffuse glow discharge characteristics for use in closing switches

    DOE Patents [OSTI]

    Christophorou, L.G.; Hunter, S.R.

    1990-06-26

    An improvement to the gas mixture used in diffuse glow discharge closing switches is disclosed which includes binary and ternary gas mixtures which are formulated to exhibit decreasing electron attachment with increasing temperature. This increases the efficiency of the conductance of the glow discharge and further inhibits the formation of an arc. 11 figs.

  8. Novel Hybrid Materials with High Stability for Electrically Switched Ion Exchange: Carbon Nanotubes/Polyaniline/Nickel Hexacyanoferrate Nanocomposites

    SciTech Connect (OSTI)

    Lin, Yuehe; Cui, Xiaoli

    2005-04-21

    A novel and stable carbon nanotubes /polyaniline /nickel hexacyanoferrates composite film has been synthesized with electrodeposition method, and the possibility for removing cesium through an electrically switched ion exchange has been evaluated in a mixture containing NaNO3 and CsNO3.

  9. Binary and ternary gas mixtures with temperature enhanced diffuse glow discharge characteristics for use in closing switches

    DOE Patents [OSTI]

    Christophorou, L.G.; Hunter, S.R.

    1988-06-28

    An improvement to the gas mixture used in diffuse glow discharge closing switches is disclosed which includes binary and ternary gas mixtures which are formulated to exhibit decreasing electron attachment with increasing temperature. This increases the efficiency of the conductance of the glow discharge and further inhibits the formation of an arc. 11 figs.

  10. Fracture mechanics: 26. volume

    SciTech Connect (OSTI)

    Reuter, W.G.; Underwood, J.H.; Newman, J.C. Jr.

    1995-12-31

    The original objective of these symposia was to promote technical interchange between researchers from the US and worldwide in the field of fracture. This objective was recently expanded to promote technical interchange between researchers in the field of fatigue and fracture. The symposium began with the Swedlow Memorial Lecture entitled ``Patterns and Perspectives in Applied Fracture Mechanics.`` The remaining 42 papers are divided into the following topical sections: Constraint crack initiation; Constraint crack growth; Weldments; Engineered materials; Subcritical crack growth; Dynamic loading; and Applications. Papers within the scope of the Energy Data Base have been processed separately.

  11. Mechanical Systems Qualification Standard

    Office of Environmental Management (EM)

    61-2008 June 2008 DOE STANDARD MECHANICAL SYSTEMS QUALIFICATION STANDARD DOE Defense Nuclear Facilities Technical Personnel U.S. Department of Energy AREA TRNG Washington, D.C. 20585 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. DOE-STD-1161-2008 ii This document is available on the Department of Energy Technical Standards Program Web Site at http://www.hss.energy.gov/nuclearsafety/techstds/ DOE-STD-1161-2008 iv INTENTIONALLY BLANK DOE-STD-1161-2008 v TABLE OF

  12. Multichannel framework for singular quantum mechanics

    SciTech Connect (OSTI)

    Camblong, Horacio E.; Epele, Luis N.; Fanchiotti, Huner; Garca Canal, Carlos A.; Ordez, Carlos R.

    2014-01-15

    A multichannel S-matrix framework for singular quantum mechanics (SQM) subsumes the renormalization and self-adjoint extension methods and resolves its boundary-condition ambiguities. In addition to the standard channel accessible to a distant (asymptotic) observer, one supplementary channel opens up at each coordinate singularity, where local outgoing and ingoing singularity waves coexist. The channels are linked by a fully unitary S-matrix, which governs all possible scenarios, including cases with an apparent nonunitary behavior as viewed from asymptotic distances. -- Highlights: A multichannel framework is proposed for singular quantum mechanics and analogues. The framework unifies several established approaches for singular potentials. Singular points are treated as new scattering channels. Nonunitary asymptotic behavior is subsumed in a unitary multichannel S-matrix. Conformal quantum mechanics and the inverse quartic potential are highlighted.

  13. Biomass Burning Observation Project Specifically,

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Burning Observation Project Specifically, the aircraft will obtain measurements of the microphysical, chemical, hygroscopic, and optical properties of aerosols. Data captured during BBOP will help scientists better understand how aerosols combine and change at a variety of distances and burn times. Locations Pasco, Washington. From July through September, the G-1 will be based out of its home base in Washington. From this location, it can intercept and measure smoke plumes from naturally

  14. Diffuse Shortwave Intensive Observation Period

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1 Diffuse Shortwave Intensive Observation Period The Diffuse Shortwave IOP ran from September 23 to October 12, 2001. During this IOP, Joe Michalsky (The State University of New York-Albany) and Tom Stoffel (National Renewable Energy Laboratory) deployed approximately 15 radiometers of various designs and manufacturers on the SGP Radiometer Calibration Facility. The purpose was to compare the accuracy of the radiometers for diffuse shortwave measurements. The Scripps Institution of Oceanography

  15. Intensive Observation Period Projects Scheduled

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1 Intensive Observation Period Projects Scheduled Several IOP projects have been scheduled for the SGP CART site this spring. These projects either have already begun or will begin shortly. Radiosondes The RS-90 Transition IOP is currently under way. The RS-90 model radiosonde is gradually replacing the older RS-80 model. Radiosondes are instrument packages attached to and launched by weather balloons. The instruments measure atmospheric pressure, temperature, and relative humidity as the

  16. ARM - Mobile Aerosol Observing System

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    FacilitiesMobile Aerosol Observing System AMF Information Science Architecture Baseline Instruments AMF1 AMF2 AMF3 MAOS Data Operations AMF Fact Sheet Images Contacts AMF Deployments McMurdo Station, Antarctica, 2015-2016 Pearl Harbor, Hawaii, to San Francisco, California, 2015 Hyytiälä, Finland, 2014 Manacapuru, Brazil, 2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011

  17. Heating mechanisms for intermittent loops in active region cores from AIA/SDO EUV observations

    SciTech Connect (OSTI)

    Cadavid, A. C.; Lawrence, J. K.; Christian, D. J.; Jess, D. B.; Nigro, G.

    2014-11-01

    We investigate intensity variations and energy deposition in five coronal loops in active region cores. These were selected for their strong variability in the AIA/SDO 94 Å intensity channel. We isolate the hot Fe XVIII and Fe XXI components of the 94 Å and 131 Å by modeling and subtracting the 'warm' contributions to the emission. HMI/SDO data allow us to focus on 'inter-moss' regions in the loops. The detailed evolution of the inter-moss intensity time series reveals loops that are impulsively heated in a mode compatible with a nanoflare storm, with a spike in the hot 131 Å signals leading and the other five EUV emission channels following in progressive cooling order. A sharp increase in electron temperature tends to follow closely after the hot 131 Å signal confirming the impulsive nature of the process. A cooler process of growing emission measure follows more slowly. The Fourier power spectra of the hot 131 Å signals, when averaged over the five loops, present three scaling regimes with break frequencies near 0.1 min{sup –1} and 0.7 min{sup –1}. The low frequency regime corresponds to 1/f noise; the intermediate indicates a persistent scaling process and the high frequencies show white noise. Very similar results are found for the energy dissipation in a 2D 'hybrid' shell model of loop magneto-turbulence, based on reduced magnetohydrodynamics, that is compatible with nanoflare statistics. We suggest that such turbulent dissipation is the energy source for our loops.

  18. Observation of Nonlinear Compton Scattering

    SciTech Connect (OSTI)

    Kotseroglou, T.

    2003-12-19

    This experiment tests Quantum Electrodynamics in the strong field regime. Nonlinear Compton scattering has been observed during the interaction of a 46.6 GeV electron beam with a 10{sup 18} W/cm{sup 2} laser beam. The strength of the field achieved was measured by the parameter {eta} = e{var_epsilon}{sub rms}/{omega}mc = 0.6. Data were collected with infrared and green laser photons and circularly polarized laser light. The timing stabilization achieved between the picosecond laser and electron pulses has {sigma}{sub rms} = 2 ps. A strong signal of electrons that absorbed up to 4 infrared photons (or up to 3 green photons) at the same point in space and time, while emitting a single gamma ray, was observed. The energy spectra of the scattered electrons and the nonlinear dependence of the electron yield on the field strength agreed with the simulation over 3 orders of magnitude. The detector could not resolve the nonlinear Compton scattering from the multiple single Compton scattering which produced rates of scattered electrons of the same order of magnitude. Nevertheless, a simulation has studied this difference and concluded that the scattered electron rates observed could not be accounted for only by multiple ordinary Compton scattering; nonlinear Compton scattering processes are dominant for n {ge} 3.

  19. Category:Observation Wells | Open Energy Information

    Open Energy Info (EERE)

    Observation Wells Jump to: navigation, search Geothermalpower.jpg Looking for the Observation Wells page? For detailed information on Observation Wells, click here....

  20. PEBBLES Mechanics Simulation Speedup

    SciTech Connect (OSTI)

    Joshua J. Cogliati; Abderrafi M. Ougouag

    2010-05-01

    Pebble bed reactors contain large numbers of spherical fuel elements arranged randomly. Determining the motion and location of these fuel elements is required for calculating certain parameters of pebble bed reactor operation. These simulations involve hundreds of thousands of pebbles and involve determining the entire core motion as pebbles are recirculated. Single processor algorithms for this are insufficient since they would take decades to centuries of wall-clock time. This paper describes the process of parallelizing and speeding up the PEBBLES pebble mechanics simulation code. Both shared memory programming with the Open Multi-Processing API and distributed memory programming with the Message Passing Interface API are used in simultaneously in this process. A new shared memory lock-less linear time collision detection algorithm is described. This method allows faster detection of pebbles in contact than generic methods. These combine to make full recirculations on AVR sized reactors possible in months of wall clock time.

  1. Rotary drive mechanism

    SciTech Connect (OSTI)

    Kenderdine, E.W.

    1991-10-08

    This patent describes a rotary drive mechanism which includes a rotary solenoid having a stator and multi-poled rotor. A moving member rotates with the rotor and is biased by a biasing device. The biasing device causes a further rotational movement after rotation by the rotary solenoid. Thus, energization of the rotary solenoid moves the member in one direction to one position and biases the biasing device against the member. Subsequently, de- energization of the rotary solenoid causes the biasing device to move the member in the same direction to another position from where the moving member is again movable by energization and de-energization of the rotary solenoid. Preferably, the moving member is a multi-lobed cam having the same number of lobes as the rotor has poles. An anti- overdrive device is also preferably provided for preventing overdrive in the forward direction or a reverse rotation of the moving member and for precisely aligning the moving member.

  2. Mechanically expandable annular seal

    DOE Patents [OSTI]

    Gilmore, R.F.

    1983-07-19

    A mechanically expandable annular reusable seal assembly to form an annular hermetic barrier between two stationary, parallel, and planar containment surfaces is described. A rotatable ring, attached to the first surface, has ring wedges resembling the saw-tooth array of a hole saw. Matching seal wedges are slidably attached to the ring wedges and have their motion restricted to be perpendicular to the second surface. Each seal wedge has a face parallel to the second surface. An annular elastomer seal has a central annular region attached to the seal wedges' parallel faces and has its inner and outer circumferences attached to the first surface. A rotation of the ring extends the elastomer seal's central region perpendicularly towards the second surface to create the fluid tight barrier. A counter rotation removes the barrier. 6 figs.

  3. Mechanically expandable annular seal

    DOE Patents [OSTI]

    Gilmore, Richard F. (Kennewick, WA)

    1983-01-01

    A mechanically expandable annular reusable seal assembly to form an annular hermetic barrier between two stationary, parallel, and planar containment surfaces. A rotatable ring, attached to the first surface, has ring wedges resembling the saw-tooth array of a hole saw. Matching seal wedges are slidably attached to the ring wedges and have their motion restricted to be perpendicular to the second surface. Each seal wedge has a face parallel to the second surface. An annular elastomer seal has a central annular region attached to the seal wedges' parallel faces and has its inner and outer circumferences attached to the first surface. A rotation of the ring extends the elastomer seal's central region perpendicularly towards the second surface to create the fluidtight barrier. A counterrotation removes the barrier.

  4. Rotary drive mechanism

    DOE Patents [OSTI]

    Kenderdine, Eugene W. (Albuquerque, NM)

    1991-01-01

    A rotary drive mechanism includes a rotary solenoid having a stator and multi-poled rotor. A moving member rotates with the rotor and is biased by a biasing device. The biasing device causes a further rotational movement after rotation by the rotary solenoid. Thus, energization of the rotary solenoid moves the member in one direction to one position and biases the biasing device against the member. Subsequently, de-energization of the rotary solenoid causes the biasing device to move the member in the same direction to another position from where the moving member is again movable by energization and de-energization of the rotary solenoid. Preferably, the moving member is a multi-lobed cam having the same number of lobes as the rotor has poles. An anti-overdrive device is also preferably provided for preventing overdrive in the forward direction or a reverse rotation of the moving member and for precisely aligning the moving member.

  5. Microfabricated therapeutic actuator mechanisms

    DOE Patents [OSTI]

    Northrup, M.A.; Ciarlo, D.R.; Lee, A.P.; Krulevitch, P.A.

    1997-07-08

    Electromechanical microstructures (microgrippers), either integrated circuit (IC) silicon-based or precision machined, to extend and improve the application of catheter-based interventional therapies for the repair of aneurysms in the brain or other interventional clinical therapies. These micromechanisms can be specifically applied to release platinum coils or other materials into bulging portions of the blood vessels also known as aneurysms. The ``micro`` size of the release mechanism is necessary since the brain vessels are the smallest in the body. Through a catheter more than one meter long, the micromechanism located at one end of the catheter can be manipulated from the other end thereof. The microgripper (micromechanism) of the invention will also find applications in non-medical areas where a remotely actuated microgripper or similar actuator would be useful or where micro-assembling is needed. 22 figs.

  6. Microfabricated therapeutic actuator mechanisms

    DOE Patents [OSTI]

    Northrup, Milton A.; Ciarlo, Dino R.; Lee, Abraham P.; Krulevitch, Peter A.

    1997-01-01

    Electromechanical microstructures (microgrippers), either integrated circuit (IC) silicon-based or precision machined, to extend and improve the application of catheter-based interventional therapies for the repair of aneurysms in the brain or other interventional clinical therapies. These micromechanisms can be specifically applied to release platinum coils or other materials into bulging portions of the blood vessels also known as aneurysms. The "micro" size of the release mechanism is necessary since the brain vessels are the smallest in the body. Through a catheter more than one meter long, the micromechanism located at one end of the catheter can be manipulated from the other end thereof. The microgripper (micromechanism) of the invention will also find applications in non-medical areas where a remotely actuated microgripper or similar actuator would be useful or where micro-assembling is needed.

  7. Observation of the Top Quark

    DOE R&D Accomplishments [OSTI]

    Kim, S. B.

    1995-08-01

    Top quark production is observed in{bar p}p collisions at{radical}s= 1.8 TeV at the Fermilab Tevatron. The Collider Detector at Fermilab (CDF) and D{O} observe signals consistent with t{bar t} to WWb{bar b}, but inconsistent with the background prediction by 4.8{sigma} (CDF), 4.6a (D{O}). Additional evidence for the top quark Is provided by a peak in the reconstructed mass distribution. The kinematic properties of the excess events are consistent with the top quark decay. They measure the top quark mass to be 176{plus_minus}8(stat.){plus_minus}10(sys.) GeV/c{sup 2} (CDF), 199{sub -21}{sup+19}(stat.){plus_minus}22(sys.) GeV/c{sup 2} (D{O}), and the t{bar t} production cross section to be 6.8{sub -2.4}{sup+3.6}pb (CDF), 6.4{plus_minus}2.2 pb (D{O}).

  8. Fluid Dynamics and Solid Mechanics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Solid Mechanics Basic and applied research in theoretical continuum dynamics, modern hydrodynamic theory, materials modeling, global climate modeling, numerical...

  9. Control of normal and abnormal bipolar resistive switching by interface junction on In/Nb:SrTiO{sub 3} interface

    SciTech Connect (OSTI)

    Sun, J.; Jia, C. H.; Li, G. Q.; Zhang, W. F.

    2012-09-24

    The resistive switching behaviors of indium (In)/Nb:SrTiO{sub 3} (NSTO) with different metal/semiconductor contacts are investigated. The In electrodes with the Schottky contacts are fabricated on NSTO surface using direct current reactive magnetron sputtering, and the fresh In is directly pressed to form the Ohmic contact. The device with one Schottky barrier displays a normal bipolar resistive switching (BRS) behavior, while the device with two Schottky barriers shows an abnormal BRS behavior. The results demonstrate that the injection and trapping or detrapping of carriers near the interface between the metal electrode and semiconductor are closely related to the resistive switching performance.

  10. Structural Evidence for a Sequential Release Mechanism for Activation of Heterotrimeric G Proteins

    SciTech Connect (OSTI)

    Kapoor, Neeraj; Menon, Santosh T.; Chauhan, Radha; Sachdev, Pallavi; Sakmar, Thomas P.

    2010-01-12

    Heptahelical G-protein (heterotrimeric guanine nucleotide-binding protein)-coupled receptors couple to heterotrimeric G proteins to relay extracellular signals to intracellular signaling networks, but the molecular mechanism underlying guanosine 5'-diphosphate (GDP) release by the G protein {alpha}-subunit is not well understood. Amino acid substitutions in the conserved {alpha}5 helix of Gi, which extends from the C-terminal region to the nucleotide-binding pocket, cause dramatic increases in basal (receptor-independent) GDP release rates. For example, mutant G{alpha}{sub i1}-T329A shows an 18-fold increase in basal GDP release rate and, when expressed in culture, it causes a significant decrease in forskolin-stimulated cAMP accumulation. The crystal structure of G{alpha}{sub i1}-T329A {center_dot} GDP shows substantial conformational rearrangement of the switch I region and additional striking alterations of side chains lining the catalytic pocket that disrupt the Mg{sup +2} coordination sphere and dislodge bound Mg{sup +2}. We propose a 'sequential release' mechanism whereby a transient conformational change in the {alpha}5 helix alters switch I to induce GDP release. Interestingly, this mechanistic model for heterotrimeric G protein activation is similar to that suggested for the activation of the plant small G protein Rop4 by RopGEF8.

  11. Time-resolved observation of fast domain-walls driven by vertical spin currents in short tracks

    SciTech Connect (OSTI)

    Sampaio, Joao; Lequeux, Steven; Chanthbouala, Andre; Cros, Vincent; Grollier, Julie; Matsumoto, Rie; Yakushiji, Kay; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji; Nishimura, Kazumasa; Nagamine, Yoshinori; Maehara, Hiroki; Tsunekawa, Koji

    2013-12-09

    We present time-resolved measurements of the displacement of magnetic domain-walls (DWs) driven by vertical spin-polarized currents in track-shaped magnetic tunnel junctions. In these structures, we observe very high DW velocities (600 m/s) at current densities below 10{sup 7} A/cm{sup 2}. We show that the efficient spin-transfer torque combined with a short propagation distance allows avoiding the Walker breakdown process and achieving deterministic, reversible, and fast (≈1 ns) DW-mediated switching of magnetic tunnel junction elements, which is of great interest for the implementation of fast DW-based spintronic devices.

  12. Aerosol Observing System (AOS) Handbook

    SciTech Connect (OSTI)

    Jefferson, A

    2011-01-17

    The Aerosol Observing System (AOS) is a suite of in situ surface measurements of aerosol optical and cloud-forming properties. The instruments measure aerosol properties that influence the earths radiative balance. The primary optical measurements are those of the aerosol scattering and absorption coefficients as a function of particle size and radiation wavelength and cloud condensation nuclei (CCN) measurements as a function of percent supersaturation. Additional measurements include those of the particle number concentration and scattering hygroscopic growth. Aerosol optical measurements are useful for calculating parameters used in radiative forcing calculations such as the aerosol single-scattering albedo, asymmetry parameter, mass scattering efficiency, and hygroscopic growth. CCN measurements are important in cloud microphysical models to predict droplet formation.

  13. Comet tail formation: Giotto observations

    SciTech Connect (OSTI)

    Wilken, B.; Jockers, K.; Johnstone, A.; Coates, A.; Heath, J.; Formisano, V.; Amata, E.; Winningham, J.D.; Thomsen, M.; Bryant, D.A.

    1986-01-01

    The process of mass loading of the solar wind by cometary ions, which forms comet tails, has been observed throughout the coma of comet Halley. Three distinct regimes were found where the nature of the energy and momentum coupling between solar wind and cometary ions is different. Outside the bow shock, where there is little angular scattering of the freshly ionized particles, the coupling is described by the simple pickup trajectory and the energy is controlled by the angle between the flow and the magnetic field. Just inside the bow shock, there is considerable scattering accompanied by another acceleration process which raises some particle energies well above the straightforward pickup value. Finally, closer to the nucleus, the amount of scattering decreases and the coupling is once more controlled by the magnetic field direction. 4 refs., 3 figs.

  14. Enhanced capacity and stability for the separation of cesium in electrically switched ion exchange

    SciTech Connect (OSTI)

    Tawfic, A.F.; Dickson, S.E.; Kim, Y.; Mekky, W.

    2015-03-15

    Electrically switched ion exchange (ESIX) can be used to separate ionic contaminants from industrial wastewater, including that generated by the nuclear industry. The ESIX method involves sequential application of reduction and oxidation potentials to an ion exchange film to induce the respective loading and unloading of cesium. This technology is superior to conventional methods (e.g electrodialysis reversal or reverse osmosis) as it requires very little energy for ionic separation. In previous studies, ESIX films have demonstrated relatively low ion exchange capacities and limited film stabilities over repeated potential applications. In this study, the methodology for the deposition of electro-active films (nickel hexacyanoferrate) on nickel electrodes was modified to improve the ion exchange capacity for cesium removal using ESIX. Cyclic voltammetry was used to investigate the ion exchange capacity and stability. Scanning electron microscopy (SEM) was used to characterize the modified film surfaces. Additionally, the films were examined for the separation of cesium ions. This modified film preparation technique enhanced the ion exchange capacity and improves the film stability compared to previous methods for the deposition of ESIX films. (authors)

  15. Metallic filament formation by aligned oxygen vacancies in ZnO-based resistive switches

    SciTech Connect (OSTI)

    Gu, Tingkun

    2014-05-28

    The electronic structure of ZnO with defects of oxygen vacancies were investigated by using first-principles methods. Some structure models were constructed in order to investigate the effects of the distribution of oxygen vacancies on the electronic properties of ZnO. By analyzing the calculated results, we found that only the aligned oxygen vacancies can form the conducting channel in ZnO, and the transformation of the oxygen vacancy from charged state to neutral state is consistent with the energetics rule of the forming aligned oxygen vacancies. As for the heterojunction of Pt/ZnO/Pt, the oxygen vacancies near the interface of Pt/ZnO depress the local Schottky barrier effectively, and the aligned oxygen vacancies in ZnO form a conducting filament connecting two Pt electrodes. The metallic filament formation in Pt/ZnO/Pt resistive switching cells should be closely related to the carrier injection from Pt electrode into ZnO and the arrangement of oxygen vacancies in ZnO slab.

  16. Enhanced control of fine particles following Title IV coal switching and NOx control

    SciTech Connect (OSTI)

    Durham, M.D.; Baldrey, K.E.; Bustard, C.J.; Martin, C.

    1997-12-31

    Electrostatic precipitators (ESPs) serve as the primary particle control devices for a majority of coal-fired power generating units in the United States. ESPs are used to collect particulate matter that range in size from less than one micrometer in diameter to several hundred micrometers. Many of the options that utilities will use to respond to Title IV of the 1990 Clean Air Act Amendments will result in changes to the ash that will be detrimental to the performance of the ESP causing increased emissions of fine particles and higher opacity. For example, a switch to low-sulfur coal significantly increases particle resistivity while low-NO{sub x} burners increase the carbon content of ashes. Both of these changes could result in derating of the boiler to comply with emissions standards. ADA has developed a chemical additive that is designed to improve the operation of ESI`s to bring these systems into compliance operation without the need for expensive capital modifications. The additives provide advantages over competing technologies in terms of low capital cost, easy to handle chemicals, and relatively non-toxic chemicals. In addition, the new additive is insensitive to ash chemistry which will allow the utility complete flexibility to select the most economical coal. Results from full-scale and pilot plant demonstrations are reported.

  17. Model-based statistical estimation of Sandia RF ohmic switch dynamic operation form stroboscopic, x-ray imaging.

    SciTech Connect (OSTI)

    Diegert, Carl F.

    2006-12-01

    We define a new diagnostic method where computationally-intensive numerical solutions are used as an integral part of making difficult, non-contact, nanometer-scale measurements. The limited scope of this report comprises most of a due diligence investigation into implementing the new diagnostic for measuring dynamic operation of Sandia's RF Ohmic Switch. Our results are all positive, providing insight into how this switch deforms during normal operation. Future work should contribute important measurements on a variety of operating MEMS devices, with insights that are complimentary to those from measurements made using interferometry and laser Doppler methods. More generally, the work opens up a broad front of possibility where exploiting massive high-performance computers enable new measurements.

  18. A Transformer-less Partial Power Boost Converter for PV Applications Using a Three-Level Switching Cell

    SciTech Connect (OSTI)

    Mohammed Agamy; Maja Harfman-Todorovic; Ahmed Elasser; Somasundaram Essakiappan

    2013-03-01

    Photovoltaic architectures with distributed power electronics provide many advantages in terms of energy yield as well as system level optimization. As the power level of the solar farm increases it becomes more beneficial to increase the dc collection network voltage, which requires the use of power devices with higher voltage ratings, and thus making the design of efficient, low cost, distributed power converters more challenging. In this paper a simple partial power converter topology is proposed. The topology is implemented using a three-level switching cell, which allows the use of semiconductor devices with lower voltage rating; thus improving design and performance and reducing converter cost. This makes the converters suitable for use for medium to high power applications where dc-link voltages of 600V~1kV may be needed without the need for high voltage devices. Converter operation and experimental results are presented for two partial power circuit variants using three-level switching cells.

  19. Multiphase soft switched DC/DC converter and active control technique for fuel cell ripple current elimination

    DOE Patents [OSTI]

    Lai, Jih-Sheng (Blacksburg, VA); Liu, Changrong (Sunnyvale, CA); Ridenour, Amy (Salem, VA)

    2009-04-14

    DC/DC converter has a transformer having primary coils connected to an input side and secondary coils connected to an output side. Each primary coil connects a full-bridge circuit comprising two switches on two legs, the primary coil being connected between the switches on each leg, each full-bridge circuit being connected in parallel wherein each leg is disposed parallel to one another, and the secondary coils connected to a rectifying circuit. An outer loop control circuit that reduces ripple in a voltage reference has a first resistor connected in series with a second resistor connected in series with a first capacitor which are connected in parallel with a second capacitor. An inner loop control circuit that reduces ripple in a current reference has a third resistor connected in series with a fourth resistor connected in series with a third capacitor which are connected in parallel with a fourth capacitor.

  20. Micromagnetic study of spin transfer switching with a spin polarization tilted out of the free layer plane

    SciTech Connect (OSTI)

    Chaves-O'Flynn, Gabriel D. Wolf, Georg; Pinna, Daniele; Kent, Andrew D.

    2015-05-07

    We present the results of zero temperature macrospin and micromagnetic simulations of spin transfer switching of thin film nanomagnets in the shape of an ellipse with a spin-polarization tilted out of the layer plane. The perpendicular component of the spin-polarization is shown to increase the reversal speed, leading to a lower current for switching in a given time. However, for tilt angles larger than a critical angle, the layer magnetization starts to precess about an out-of-plane axis, which leads to a final magnetization state that is very sensitive to simulation conditions. As the ellipse lateral size increases, this out-of-plane precession is suppressed, due to the excitation of spatially non-uniform magnetization modes.

  1. Thermal battery degradation mechanisms

    SciTech Connect (OSTI)

    Missert, Nancy A.; Brunke, Lyle Brent

    2015-09-01

    Diffuse reflectance IR spectroscopy (DRIFTS) was used to investigate the effect of accelerated aging on LiSi based anodes in simulated MC3816 batteries. DRIFTS spectra showed that the oxygen, carbonate, hydroxide and sulfur content of the anodes changes with aging times and temperatures, but not in a monotonic fashion that could be correlated to phase evolution. Bands associated with sulfur species were only observed in anodes taken from batteries aged in wet environments, providing further evidence for a reaction pathway facilitated by H2S transport from the cathode, through the separator, to the anode. Loss of battery capacity with accelerated aging in wet environments was correlated to loss of FeS2 in the catholyte pellets, suggesting that the major contribution to battery performance degradation results from loss of active cathode material.

  2. Mechanically Cooled Large-Volume Germanium Detector Systems for Nuclear Explosion Monitoring DOENA27323-1

    SciTech Connect (OSTI)

    Hull, E.L.

    2006-07-28

    Compact maintenance free mechanical cooling systems are being developed to operate large volume germanium detectors for field applications. To accomplish this we are utilizing a newly available generation of Stirling-cycle mechanical coolers to operate the very largest volume germanium detectors with no maintenance. The user will be able to leave these systems unplugged on the shelf until needed. The flip of a switch will bring a system to life in ~ 1 hour for measurements. The maintenance-free operating lifetime of these detector systems will exceed 5 years. These features are necessary for remote long-duration liquid-nitrogen free deployment of large-volume germanium gamma-ray detector systems for Nuclear Explosion Monitoring. The Radionuclide Aerosol Sampler/Analyzer (RASA) will greatly benefit from the availability of such detectors by eliminating the need for liquid nitrogen at RASA sites while still allowing the very largest available germanium detectors to be reliably utilized.

  3. New photodisintegration threshold observable in

    SciTech Connect (OSTI)

    E.A. Wulf; R.S. Canon; Sally J. Gaff; J.H. Kelley; R.M. Prior; E.C. Schreiber; M. Spraker; D.R. Tilley; H.R. Weller; M. Viviani; A. Kievsky; S. Rosati; Rocco Schiavilla

    2000-02-01

    Measurements of the cross section, vector, and tensor analyzing powers, and linear gamma-ray polarization in the radiative capture reactions D(p,y){sup 3} He and p(d,y){sup 3}He at c.m. energies in the range 0-53 keV allow the determination of the reduced matrix elements (RMEs) relevant for these transitions. From these RMEs the value of the integral which determines the Gerasimov-Drell-Hearn sum rule for He is obtained in the threshold region, corresponding to two-body breakup, and compared with the results of an ab initio microscopic three-body model calculation.The theoretical predictions for the value of this integral based on a ''nucleons-only'' assumption are an order of magnitude smaller than experiment. The discrepancy is reduced to about a factor of 2 when two-body currents are taken into account. This factor of 2 is due to an almost exact cancellation between the dominant E1 RMEs in the theoretical calculation. The excess E1 strength observed experimentally could provide useful insights into the nuclear interaction at low energies.

  4. Transverse flowing liquid Kerr cell for high average power laser Q-switching and for direct modulation of high power laser beams.

    DOE Patents [OSTI]

    Comaskey, Brian J.

    2004-12-07

    A fluid flow concept is applied in an optical apparatus to define a high gain stand-off, fast electro-optical q-switch which is highly impervious to high average power optical loads.

  5. GNEP Partners and Observers | Department of Energy

    Office of Environmental Management (EM)

    GNEP Partners and Observers GNEP Partners and Observers A list of GNEP partners and observers. PDF icon GNEP Partners and Observers More Documents & Publications Microsoft PowerPoint - GNEP PARTNERS CANDIDATE PARTNERS AND OBSERVERS.PPT Senior Delegation Officials From All GNEP Participants Meeting Materials: April 21, 2008

  6. Special Emphasis Observances | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Diversity and Inclusion » Special Emphasis Observances Special Emphasis Observances The Energy Department celebrates special emphasis observances regularly, inviting guest speakers to highlight how the agency's mission benefits from diversity and inclusion. The Energy Department celebrates special emphasis observances regularly, inviting guest speakers to highlight how the agency's mission benefits from diversity and inclusion. The Department of Energy observes special days, weeks, and months

  7. Attosecond Electron Wave-Packet Interference Observed by Transient Absorption

    SciTech Connect (OSTI)

    Holler, M.; Schapper, F.; Gallmann, L.; Keller, U.

    2011-03-25

    We perform attosecond time-resolved transient absorption spectroscopy around the first ionization threshold of helium and observe rapid oscillations of the absorption of the individual harmonics as a function of time delay with respect to a superimposed, moderately strong infrared laser field. The phase relation between the absorption modulation of individual harmonics gives direct evidence for the interference of transiently bound electronic wave packets as the mechanism behind the absorption modulation.

  8. Expected Power-Utility Maximization Under Incomplete Information and with Cox-Process Observations

    SciTech Connect (OSTI)

    Fujimoto, Kazufumi; Nagai, Hideo; Runggaldier, Wolfgang J.

    2013-02-15

    We consider the problem of maximization of expected terminal power utility (risk sensitive criterion). The underlying market model is a regime-switching diffusion model where the regime is determined by an unobservable factor process forming a finite state Markov process. The main novelty is due to the fact that prices are observed and the portfolio is rebalanced only at random times corresponding to a Cox process where the intensity is driven by the unobserved Markovian factor process as well. This leads to a more realistic modeling for many practical situations, like in markets with liquidity restrictions; on the other hand it considerably complicates the problem to the point that traditional methodologies cannot be directly applied. The approach presented here is specific to the power-utility. For log-utilities a different approach is presented in Fujimoto et al. (Preprint, 2012).

  9. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended...

  10. INL '@work' heavy equipment mechanic

    SciTech Connect (OSTI)

    Christensen, Cad

    2008-01-01

    INL's Cad Christensen is a heavy equipment mechanic. For more information about INL careers, visit http://www.facebook.com/idahonationallaboratory.

  11. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    12.3.2 to investigate the small-scale mechanics of indium nanostructures. Scanning x-ray microdiffraction (SXRD) studies revealed that the indium microstructure is typical...

  12. Unique Auxin Regulation Mechanism Discovered

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Unique Auxin Regulation Mechanism Discovered Print The plant hormone auxin regulates many plant growth and development processes, including shoot growth, root branching, fruit...

  13. Unique Auxin Regulation Mechanism Discovered

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Auxin Regulation Mechanism Discovered Print Wednesday, 29 August 2007 00:00 The plant hormone auxin regulates many plant growth and development processes, including shoot growth,...

  14. INL '@work' heavy equipment mechanic

    ScienceCinema (OSTI)

    Christensen, Cad

    2013-05-28

    INL's Cad Christensen is a heavy equipment mechanic. For more information about INL careers, visit http://www.facebook.com/idahonationallaboratory.

  15. First Observation of Plasmarons in Graphene

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    First Observation of Plasmarons in Graphene First Observation of Plasmarons in Graphene Print Wednesday, 30 June 2010 00:00 An international team of scientists performing...

  16. Dynamics of Molecular Clouds: Observations, Simulations, and...

    Office of Scientific and Technical Information (OSTI)

    Conference: Dynamics of Molecular Clouds: Observations, Simulations, and NIF Experiments Citation Details In-Document Search Title: Dynamics of Molecular Clouds: Observations,...

  17. Mechanical Models of Fault-Related Folding

    SciTech Connect (OSTI)

    Johnson, A. M.

    2003-01-09

    The subject of the proposed research is fault-related folding and ground deformation. The results are relevant to oil-producing structures throughout the world, to understanding of damage that has been observed along and near earthquake ruptures, and to earthquake-producing structures in California and other tectonically-active areas. The objectives of the proposed research were to provide both a unified, mechanical infrastructure for studies of fault-related foldings and to present the results in computer programs that have graphical users interfaces (GUIs) so that structural geologists and geophysicists can model a wide variety of fault-related folds (FaRFs).

  18. Modelling of volatility in monetary transmission mechanism

    SciTech Connect (OSTI)

    Dobešová, Anna; Klepáč, Václav; Kolman, Pavel; Bednářová, Petra

    2015-03-10

    The aim of this paper is to compare different approaches to modeling of volatility in monetary transmission mechanism. For this purpose we built time-varying parameter VAR (TVP-VAR) model with stochastic volatility and VAR-DCC-GARCH model with conditional variance. The data from three European countries are included in the analysis: the Czech Republic, Germany and Slovakia. Results show that VAR-DCC-GARCH system captures higher volatility of observed variables but main trends and detected breaks are generally identical in both approaches.

  19. Porosity and mechanical properties of zirconium ceramics

    SciTech Connect (OSTI)

    Kalatur, Ekaterina Narikovich, Anton; Buyakova, Svetlana E-mail: kulkov@ispms.tsc.ru; Kulkov, Sergey E-mail: kulkov@ispms.tsc.ru

    2014-11-14

    The article studies the porous ceramics consisting of ultra-fine ZrO{sub 2} powders. The porosity of ceramic samples varied from 15% to 80%. The structure of the ceramic materials had a cellular configuration. The distinctive feature of all experimentally obtained strain diagrams is their nonlinearity at low deformations characterized by the parabolic law. It was shown that the observed nonlinear elasticity for low deformations shown in strain diagrams is due to the mechanical instability of cellular elements of the ceramic framework.

  20. Mechanism of paint removing by organic solvents

    SciTech Connect (OSTI)

    Del Nero, V.; Siat, C.; Marti, M.J.; Aubry, J.M.; Lallier, J.P.; Dupuy, N.; Huvenne, J.P.

    1996-01-01

    The mechanism of paint removing has been studied by comparing the stripping efficiency of a given solvent with its ability to swell the film. The most effective solvents have a Hildebrand{close_quote}s parameter, {delta}{sub H}, ranging from 10.5 to 12 and a Dimroth parameter, ET{sub (30)}, ranging from 0.25 to 0.4. The synergy observed with the mixtures DMSO/non polar solvent is explained by a dissociation of the DMSO clusters into individual molecules which diffuse more easily. {copyright} {ital 1996 American Institute of Physics.}

  1. Formation mechanism of steep wave front in magnetized plasmas (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Formation mechanism of steep wave front in magnetized plasmas Citation Details In-Document Search Title: Formation mechanism of steep wave front in magnetized plasmas Bifurcation from a streamer to a solitary drift wave is obtained in three dimensional simulation of resistive drift waves in cylindrical plasmas. The solitary drift wave is observed in the regime where the collisional transport is important as well as fluctuation induced transport. The solitary drift

  2. QUANTUM MECHANICS WITHOUT STATISTICAL POSTULATES

    SciTech Connect (OSTI)

    G. GEIGER; ET AL

    2000-11-01

    The Bohmian formulation of quantum mechanics describes the measurement process in an intuitive way without a reduction postulate. Due to the chaotic motion of the hidden classical particle all statistical features of quantum mechanics during a sequence of repeated measurements can be derived in the framework of a deterministic single system theory.

  3. SIMULATING PROTOSTELLAR JETS SIMULTANEOUSLY AT LAUNCHING AND OBSERVATIONAL SCALES

    SciTech Connect (OSTI)

    Ramsey, Jon P.; Clarke, David A. [Institute for Computational Astrophysics, Department of Astronomy and Physics, Saint Mary's University, Halifax, Nova Scotia B3H 3C3 (Canada)

    2011-02-10

    We present the first 2.5-dimensional magnetohydrodynamic (MHD) simulations of protostellar jets that include both the region in which the jet is launched magnetocentrifugally at scale lengths <0.1 AU and where the propagating jet is observed at scale lengths >10{sup 3} AU. These simulations, performed with the new adaptive mesh refinement MHD code AZEuS, reveal interesting relationships between conditions at the disk surface, such as the magnetic field strength, and direct observables such as proper motion, jet rotation, jet radius, and mass flux. By comparing these quantities with observed values, we present direct numerical evidence that the magnetocentrifugal launching mechanism is capable, by itself, of launching realistic protostellar jets.

  4. Mechanical Solutions Inc | Open Energy Information

    Open Energy Info (EERE)

    Mechanical Solutions Inc Jump to: navigation, search Name: Mechanical Solutions Inc Place: New York Product: New York-based contractor. References: Mechanical Solutions Inc1 This...

  5. Statistical mechanics based on fractional classical and quantum mechanics

    SciTech Connect (OSTI)

    Korichi, Z.; Meftah, M. T.

    2014-03-15

    The purpose of this work is to study some problems in statistical mechanics based on the fractional classical and quantum mechanics. At first stage we have presented the thermodynamical properties of the classical ideal gas and the system of N classical oscillators. In both cases, the Hamiltonian contains fractional exponents of the phase space (position and momentum). At the second stage, in the context of the fractional quantum mechanics, we have calculated the thermodynamical properties for the black body radiation, studied the Bose-Einstein statistics with the related problem of the condensation and the Fermi-Dirac statistics.

  6. Low frequency noise in the unstable contact region of Au-to-Au microcontact for microelectromechanical system switches

    SciTech Connect (OSTI)

    Qiu, Haodong; Wang, Hong; Ke, Feixiang

    2014-06-23

    The noise behavior of Au-to-Au microcontact for microelectromechanical system switches has been experimentally studied in the unstable contact region. The results suggest that the electrical conduction remains nonmetallic at the initial stage during contact formation due to the existence of alien films, and traps in the alien layer located at the contact interface could play an important role in determining the conduction noise. The conduction fluctuation induced by electron trapping-detrapping associated with the hydrocarbon layer is found to be an intrinsic noise source contributing to the low frequency noise in the unstable contact region.

  7. Durability Improvements Through Degradation Mechanism Studies...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Degradation Mechanism Studies Durability Improvements Through Degradation Mechanism Studies Presented at the Department of Energy Fuel Cell Projects Kickoff Meeting,...

  8. Sandia Energy - Statistical Mechanics with Density Functional...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Statistical Mechanics with Density Functional Theory Accuracy Home Highlights - HPC Statistical Mechanics with Density Functional Theory Accuracy Previous Next Statistical...

  9. Mechanically balanced tapered plug valve

    DOE Patents [OSTI]

    Anaya, Jose R. (Coacalco, MX)

    1985-01-01

    The invention is a novel hermetic tapered plug valve having a spring-like resilient mechanism for providing axial balance to the plug and thereby prevent valve lock up.

  10. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Publication about this research: G. Lee, J.Y. Kim, A.S. Budiman, N. Tamura, M. Kunz, K. Chen, M.J. Burek, J.R. Greer, and T.Y. Tsui, "Fabrication, structure and mechanical...

  11. Unique Auxin Regulation Mechanism Discovered

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Unique Auxin Regulation Mechanism Discovered Unique Auxin Regulation Mechanism Discovered Print Wednesday, 29 August 2007 00:00 The plant hormone auxin regulates many plant growth and development processes, including shoot growth, root branching, fruit ripening, tropisms, and flowering. But how such a simple molecule elicits such a variety of cellular responses has been a mystery. An important breakthrough came in 2005, wh en a conserved plant protein known as TIR1 (part of a protein destruction

  12. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  13. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  14. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  15. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  16. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  17. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  18. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Print Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale mechanical properties and reliability. Researchers from the University of

  19. Mechanical Behavior of Indium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mechanical Behavior of Indium Nanostructures Mechanical Behavior of Indium Nanostructures Print Wednesday, 26 May 2010 00:00 Indium is a key material in lead-free solder applications for microelectronics due to its excellent wetting properties, extended ductility, and high electrical conductivity. With the size of electronic devices continuing to shrink and the promise of indium-based nanotechnologies, it is important to develop a fundamental understanding of this material's small-scale

  20. Mechanical Response of Thermoelectric Materials

    SciTech Connect (OSTI)

    Wereszczak, Andrew A.; Case, Eldon D.

    2015-05-01

    A sufficient mechanical response of thermoelectric materials (TEMats) to structural loadings is a prerequisite to the exploitation of any candidate TEMat's thermoelectric efficiency. If a TEMat is mechanically damaged or cracks from service-induced stresses, then its thermal and electrical functions can be compromised or even cease. Semiconductor TEMats tend to be quite brittle and have a high coefficient of thermal expansion; therefore, they can be quite susceptible to mechanical failure when subjected to operational thermal gradients. Because of this, sufficient mechanical response (vis-a-vis, mechanical properties) of any candidate TEMat must be achieved and sustained in the context of the service-induced stress state to which it is subjected. This report provides an overview of the mechanical responses of state-of-the-art TEMats; discusses the relevant properties that are associated with those responses and their measurement; and describes important, nonequilibrium phenomena that further complicate their use in thermoelectric devices. For reference purposes, the report also includes several appendixes that list published data on elastic properties and strengths of a variety of TEMats.