National Library of Energy BETA

Sample records for nr nr ge

  1. EKSAMENSPROJEKT NR. ones(1,ymax)

    E-Print Network [OSTI]

    at wind turbines. The novelty lies in the explicit minimization of wind-speed forecasts regarded as imagesRobust Alignment of Wind Prognosis Rune Klarskov Jensen LYNGBY 2004 EKSAMENSPROJEKT NR. 10 IMM #12 #28;ve months at the Mathematical Statistics Section, Department of Informatics and Mathematical

  2. nr

    National Nuclear Security Administration (NNSA)

    4%2A en Powering the Nuclear Navy http:www.nnsa.energy.govourmissionpoweringnavy

    Page...

  3. nr

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal GasAdministration Medal01 Sandia4) August 20123/%2A en46Afedkcp8/%2A en

  4. 1LIU magazIne nr 2 2012 magazinelinkping university nr 2 2012

    E-Print Network [OSTI]

    Zhao, Yuxiao

    1LIU magazIne nr 2 2012 magazinelinköping university nr 2 2012 cable guys made the headlines biogas about new research findings and a popular language café. 18 Biogas fuels further expansion Linköping is investing heavily in biogas. 20 Antibiotic crisis a global threat Prescription of antibiotics has

  5. Hanford Site - 100-NR-2 | Department of Energy

    Office of Environmental Management (EM)

    NR-2 Hanford Site - 100-NR-2 July 1, 2014 - 12:00pm Addthis US Department of Energy Groundwater Database Groundwater Master Report InstallationName, State: Hanford Site, WA...

  6. Nr. 047 / 2013 // 6. Mrz 2013 3.343 Zeichen

    E-Print Network [OSTI]

    Ullmann, G. Matthias

    , in den 1980er Jahren, hatte seine Heimatregion noch stark unter der Luftverschmutzung #12;Nr. 047 / 2013

  7. 1 -Wiwigramm Nr. 22 / Sommer 2006 Nr. 22 Informationen der Wirtschaftswissenschaftlichen Fakultt der FSU Jena April 2006

    E-Print Network [OSTI]

    Seyfarth, Andre

    1 - Wiwigramm Nr. 22 / Sommer 2006 Nr. 22 Informationen der Wirtschaftswissenschaftlichen Fakultät Wiederholungsklausuren wissen, ob das erste Semester letztlich wirklich erfolgreich für sie war. Auch in diesem Sommer befürwortet hat. Am 1. März haben #12;2 - Wiwigramm Nr. 22 / Sommer 2006 Berufungsverhandlungen mit dem

  8. Cleanroom Safety Training 2nd Edition, NR

    E-Print Network [OSTI]

    Subramanian, Venkat

    Cleanroom Safety Training 2nd Edition, NR #12;All users must first complete the annual safety://ehs.wustl.edu/training/Pages/default.aspx #12;Areas of the Cleanroom Emergency ExitMain Entrance/Exit First Aid Kit Shower & Eye Wash Station or completion of any process off-hours requires a MINIMUM of 2 authorized users in the cleanroom at all times

  9. Mitteilungsblatt Ausgabe Nr. 05/2004

    E-Print Network [OSTI]

    Steinhoff, Heinz-Jürgen

    Amtliches Mitteilungsblatt Ausgabe Nr. 05/2004 vom 2. August 2004 Inhalt Errichtung eines Instituts Präsidiums in der 29. Sitzung am 1. Juli 2004) 133 Ordnung des Instituts für Mathematik im Fachbereich 2004) 134 Ordnung über den Nachweis einer besonderen Befähigung zum Studium künstlerischer Studiengänge

  10. Mitteilungsblatt Ausgabe Nr. 06/2004

    E-Print Network [OSTI]

    Steinhoff, Heinz-Jürgen

    Amtliches Mitteilungsblatt Ausgabe Nr. 06/2004 vom 9. September 2004 Inhalt Änderung der Ordnung Nds. MWK vom 11.06.2004 ­ 21.3 ­ 745 09-92 -) 153 Ordnung über die Feststellung der Eignung und die (Erlass des Nds. MWK vom 11.06.2004 ­ 21.3 ­ 745 09-83 -) 156 Promotionsordnung des Fachbereichs Kultur

  11. NR/HEP: roadmap for the future

    E-Print Network [OSTI]

    Vitor Cardoso; Leonardo Gualtieri; Carlos Herdeiro; Ulrich Sperhake; Paul M. Chesler; Luis Lehner; Seong Chan Park; Harvey S. Reall; Carlos F. Sopuerta; Daniela Alic; Oscar J. C. Dias; Roberto Emparan; Valeria Ferrari; Steven B. Giddings; Mahdi Godazgar; Ruth Gregory; Veronika E. Hubeny; Akihiro Ishibashi; Greg Landsberg; Carlos O. Lousto; David Mateos; Vicki Moeller; Hirotada Okawa; Paolo Pani; M. Andy Parker; Frans Pretorius; Masaru Shibata; Hajime Sotani; Toby Wiseman; Helvi Witek; Nicolas Yunes; Miguel Zilhao

    2012-01-24

    Physics in curved spacetime describes a multitude of phenomena, ranging from astrophysics to high energy physics. The last few years have witnessed further progress on several fronts, including the accurate numerical evolution of the gravitational field equations, which now allows highly nonlinear phenomena to be tamed. Numerical relativity simulations, originally developed to understand strong field astrophysical processes, could prove extremely useful to understand high-energy physics processes like trans-Planckian scattering and gauge-gravity dualities. We present a concise and comprehensive overview of the state-of-the-art and important open problems in the field(s), along with guidelines for the next years. This writeup is a summary of the "NR/HEP Workshop" held in Madeira, Portugal from August 31st to September 3rd 2011.

  12. NR/HEP: roadmap for the future

    E-Print Network [OSTI]

    Cardoso, Vitor; Herdeiro, Carlos; Sperhake, Ulrich; Chesler, Paul M; Lehner, Luis; Park, Seong Chan; Reall, Harvey S; Sopuerta, Carlos F; Alic, Daniela; Dias, Oscar J C; Emparan, Roberto; Ferrari, Valeria; Giddings, Steven B; Godazgar, Mahdi; Gregory, Ruth; Hubeny, Veronika E; Ishibashi, Akihiro; Landsberg, Greg; Lousto, Carlos O; Mateos, David; Moeller, Vicki; Okawa, Hirotada; Pani, Paolo; Parker, M Andy; Pretorius, Frans; Shibata, Masaru; Sotani, Hajime; Wiseman, Toby; Witek, Helvi; Yunes, Nicolas; Zilhao, Miguel

    2012-01-01

    Physics in curved spacetime describes a multitude of phenomena, ranging from astrophysics to high energy physics. The last few years have witnessed further progress on several fronts, including the accurate numerical evolution of the gravitational field equations, which now allows highly nonlinear phenomena to be tamed. Numerical relativity simulations, originally developed to understand strong field astrophysical processes, could prove extremely useful to understand high-energy physics processes like trans-Planckian scattering and gauge-gravity dualities. We present a concise and comprehensive overview of the state-of-the-art and important open problems in the field(s), along with guidelines for the next years. This writeup is a summary of the "NR/HEP Workshop" held in Madeira, Portugal from August 31st to September 3rd 2011.

  13. Nr. 168 / 2014 // 29. August 2014 Erneuerbare Energien

    E-Print Network [OSTI]

    Schittkowski, Klaus

    Nr. 168 / 2014 // 29. August 2014 1/5 Erneuerbare Energien: Informationstechnische Unterstützung Universität Bayreuth ein IT-System für Investitionsentscheidungen Erneuerbare Energien sollen in Deutschland Unternehmen, die Produkte oder Dienstleistungen für die Gewinnung oder Nutzung erneuerbarer Energien anbieten

  14. Working Papers / Documents de travail WP 2014 -Nr 34

    E-Print Network [OSTI]

    Boyer, Edmond

    Working Papers / Documents de travail WP 2014 - Nr 34 Optimal Transition to Renewable Energy;Optimal transition to renewable energy with threshold of irreversible pollution No¨el BONNEUIL Institut;introduction of a cleaner renewable energy, although onerous, is opti- mal with respect to inter

  15. Working Papers / Documents de travail WP 2014 -Nr 33

    E-Print Network [OSTI]

    Boyer, Edmond

    , regarding recent striking and acute episodes of urban air pollution, the World Health Organization (WHO deterioration (outdoor air pollution, indoor air pollution, unsafe water etc). Say otherwise, worldwide healthWorking Papers / Documents de travail WP 2014 - Nr 33 The Cost of Pollution on Longevity, Welfare

  16. Diploma Supplement: Aktivittenliste und Laufzettel (Stand: September 2011) Laufzettel (Nr. ___ von ______________________________________________)

    E-Print Network [OSTI]

    Kuehnlenz, Kolja

    Diploma Supplement: Aktivitätenliste und Laufzettel (Stand: September 2011) Laufzettel (Nr. ___ von keine extracurricularen Aktivitäten oder Auslandsaufenthalte in mein Diploma Supplement aufgenommen werden. Es sollen folgende Aktivitäten/Auslandsaufenthalte in mein Diploma Supplement aufgenom- men

  17. Dynamic and specific interaction between synaptic NR2-NMDA receptor and PDZ proteins

    E-Print Network [OSTI]

    Bard, Lucie

    The relative content of NR2 subunits in the NMDA receptor confers specific signaling properties and plasticity to synapses. However, the mechanisms that dynamically govern the retention of synaptic NMDARs, in particular ...

  18. Concepts in GIS NR 505 Fall 2010 Department of Forestry, Rangelands, and Watershed Stewardship

    E-Print Network [OSTI]

    Boone, Randall B.

    1 Concepts in GIS NR 505 Fall 2010 Department of Forestry, Rangelands, and Watershed Stewardship is designed to introduce graduate students to concepts in geographic information systems (GIS). The purpose of the course is threefold, to: 1) Examine the broad research context in which GIS is adopted and used through

  19. IEEE Intelligent Systems", 2000, vol. 15, nr. 6, pgs. 6972 FAQs on OIL

    E-Print Network [OSTI]

    van Harmelen, Frank

    IEEE Intelligent Systems", 2000, vol. 15, nr. 6, pgs. 6972 FAQs on OIL: the Ontology Inference is OIL trying to achieve The current Web is entirely aimed at human readers. Machines are oblivious. OIL is designed to be exactly such a representation of machineaccessible semantics of information

  20. ACASA DESPRE REVISTA ECHIPA FELICIA NUMARUL CURENT ARHIVA AUTORI AN III, NR.88,

    E-Print Network [OSTI]

    Lummaa, Virpi

    ACASA DESPRE REVISTA ECHIPA FELICIA NUMARUL CURENT ARHIVA AUTORI AN III, NR.88, CAUTA IN REVISTA parintii sa aiba mai multi copii? - Mama si copilul :: Revista Felicia 15/03/2008http://www.revistafelicia copilul Noutati Ghidul de mancat sanatos numai cu Felicia Revista Felicia pledeaza pentru o alimentatie

  1. Phytologia (August 2010) 92(2)266 VARIATION IN nrDNA AND cpDNA OF JUNIPERUS

    E-Print Network [OSTI]

    Adams, Robert P.

    . occidentalis, J. osteosperma, Cupressaceae, nrDNA, petN- psbM, trnD-trnT, trnL-trnF, trnS-trnG, SNPs

  2. Specific Targeting of Pro-Death NMDA Receptor Signals with Differing Reliance on the NR2B PDZ Ligand 

    E-Print Network [OSTI]

    Clarke, P.; Soriano, F. X.; Martel, M. A.; Papadia, S.; Vaslin, A.; Baxter, P.; Rickman, C.; Forder, J.; Tymianski, M.; Duncan, R.; Aarts, M.; Wyllie, David J A; Hardingham, G. E.

    2008-01-01

    NMDA receptors (NMDARs) mediate ischemic brain damage, for which interactions between the C termini of NR2 subunits and PDZ domain proteins within the NMDAR signaling complex (NSC) are emerging therapeutic targets. However, ...

  3. Cation-cation interactions, magnetic communication and reactivity of the pentavalent uraniumion [U(NR)2]+

    SciTech Connect (OSTI)

    Spencer, Liam P [Los Alamos National Laboratory; Schelter, Eric J [Los Alamos National Laboratory; Boncella, James M [Los Alamos National Laboratory; Yang, Ping [Los Alamos National Laboratory; Gsula, Robyn L [NON LANL; Scott, Brian L [Los Alamos National Laboratory; Thompson, Joe D [Los Alamos National Laboratory; Kiplinger, Jacqueline L [Los Alamos National Laboratory; Batista, Enrique R [Los Alamos National Laboratory

    2009-01-01

    The dimeric bis(imido) uranium complex [{l_brace}U(NtBu)2(I)(tBu2bpy){r_brace}2] (see picture; U green, N blue, I red) has cation-cation interactions between [U(NR)2]+ ions. This f1-f1 system also displays f orbital communication between uranium(V) centers at low temperatures, and can be oxidized to generate uranium(VI) bis(imido) complexes.

  4. Proposal for the Award of a Contract for the Civil Engineering Work on the Extensions to Buildings SUH and SD at LEP Access point nr. 2

    E-Print Network [OSTI]

    1990-01-01

    Proposal for the Award of a Contract for the Civil Engineering Work on the Extensions to Buildings SUH and SD at LEP Access point nr. 2

  5. 100-NR-2 Apatite Treatability Test FY09 Status: High Concentration Calcium-Citrate-Phosphate Solution Injection for In Situ Strontium-90 Immobilization

    SciTech Connect (OSTI)

    Vermeul, Vincent R.; Fritz, Brad G.; Fruchter, Jonathan S.; Szecsody, James E.; Williams, Mark D.

    2009-12-16

    100-NR-2 Apatite Treatability Test FY09 Status: High Concentration Calcium-Citrate-Phosphate Solution Injection for In Situ Strontium-90 Immobilization INTERIM LETTER REPORT

  6. Pacific Northwest National Laboratory Apatite Investigation at the 100-NR-2 Quality Assurance Project Plan

    SciTech Connect (OSTI)

    Fix, N. J.

    2008-03-28

    This Quality Assurance Project Plan provides the quality assurance requirements and processes that will be followed by staff working on the 100-NR-2 Apatite Project. The U.S. Department of Energy, Fluor Hanford, Inc., Pacific Northwest National Laboratory, and the Washington Department of Ecology agreed that the long-term strategy for groundwater remediation at 100-N would include apatite sequestration as the primary treatment, followed by a secondary treatment. The scope of this project covers the technical support needed before, during, and after treatment of the targeted subsurface environment using a new high-concentration formulation.

  7. DIFFERENCES AMONG the B.S. IN FISHERIES AND WILDLIFE SCIENCE (FW), ENVIRONMENTAL SCIENCES (ES) and NATURAL RESOURCES (NR)

    E-Print Network [OSTI]

    Kurapov, Alexander

    specialization. The Environmental Sciences (ES) degree focuses on examining environmental issues from scientific on the technical science behind large scale environmental issues. ES students learn how to carry out research, and the social, economic and political influences on resource use and environmental policy. NR students focus

  8. PNNL Apatite Investigation at 100-NR-2 Quality Assurance Project Plan

    SciTech Connect (OSTI)

    Fix, N. J.

    2009-04-02

    In 2004, the U.S. Department of Energy, Fluor Hanford, Inc., Pacific Northwest National Laboratory (PNNL), and the Washington Department of Ecology agreed that the long-term strategy for groundwater remediation at the 100-N Area would include apatite sequestration as the primary treatment, followed by a secondary treatment if necessary. Since then, the agencies have worked together to agree on which apatite sequestration technology has the greatest chance of reducing strontium-90 flux to the Columbia River. This Quality Assurance Project Plan provides the quality assurance requirements and processes that will be followed by staff working on the PNNL Apatite Investigation at 100-NR-2 Project. The plan is designed to be used exclusively by project staff.

  9. Nick Ovenden, Vivi Rottschfer A greenhouse growth model for unselfish roses NAW 5/3 nr. 4 december 2002 313 Nick Ovenden

    E-Print Network [OSTI]

    Rottschäfer, Vivi

    Nick Ovenden, Vivi Rottschäfer A greenhouse growth model for unselfish roses NAW 5/3 nr. 4 december Postbus 9512, 2300 RA Leiden vivi@math.leidenuniv.nl Studiegroep wiskunde in de industrie A greenhouse, it is commonplace for the internal climate of a greenhouse to be computer-controlled, although the question of how

  10. Fracture Testing of a Self-Healing Polymer Composite by E.N. Brown, N.R. Sottos and S.R. White

    E-Print Network [OSTI]

    Sottos, Nancy R.

    Fracture Testing of a Self-Healing Polymer Composite by E.N. Brown, N.R. Sottos and S.R. White with an embedded catalyst. The effects of size and concentration of the catalyst and mi- crocapsules on fracture as much as 90 percent of its virgin fracture toughness. KEY WORDS--Self-healing, autonomic healing

  11. 220 NAW 5/13 nr. 3 september 2012 New books about Henri Poincare Jean-Marc Ginoux, Ferdinand Verhulst, Jeremy Gray Jean-Marc Ginoux

    E-Print Network [OSTI]

    Verhulst, Ferdinand

    1 1 220 NAW 5/13 nr. 3 september 2012 New books about Henri Poincar´e Jean-Marc Ginoux, Ferdinand Verhulst, Jeremy Gray Jean-Marc Ginoux Laboratoire PROTEE, EA 3819 I.U.T. de Toulon Universit´e du Sud on life and work of Henri Poincar´e. Each of the respective authors Jean-Marc Ginoux, Ferdinand Verhulst

  12. Tetrahalide Complexes of the [U(NR)(2)]2+ Ion: Synthesis, Theory, and Chlorine K-Edge X-ray Absorption Spectroscopy

    SciTech Connect (OSTI)

    Spencer, Liam P.; Yang, Ping; Minasian, Stefan G.; Jilek, Robert E.; Batista, Enrique R.; Boland, Kevin S.; Boncella, James M.; Conradson, S. D.; Clark, David L.; Hayton, Trevor W.; Kozimor, Stosh A.; Martin, Richard L.; MacInnes, Molly M.; Olson, Angela C.; Scott, Brian L.; Shuh, D. K.; Wilkerson, Marianne P.

    2013-02-13

    Synthetic routes to salts containing uranium bisimido tetrahalide anions [U(NR)(2)X-4](2-) (X = Cl-, Br-) and non-coordinating NEt4+ and PPh4+ countercations are reported. In general, these compounds can be prepared from U(NR)(2)I-2(THF)(x) (x = 2 and R = 'Bu, Ph; x = 3 and R = Me) upon addition of excess halide. In addition to providing stable coordination complexes with Cl-, the [U(NMe)(2)](2 +) cation also reacts with Br- to form stable [NEt4](2)[U(NMe)(2)Br-4] complexes. These materials were used as a platform to compare electronic structure and bonding in [U(NR)(2)](2+) with [UO2](2+). Specifically, Cl K-edge X-ray absorption spectroscopy (XAS) and both ground-state and time-dependent hybrid density functional theory (DFT and TDDFT) were used to probe U-Cl bonding interactions in [PPh4](2)[U((NBu)-Bu-t)(2)Cl-4] and [PPh4](2)[UO2Cl4]. The DFT and XAS results show the total amount of Cl 3p character mixed with the U 5f orbitals was roughly 7-10% per U-Cl bond for both compounds, which shows that moving from oxo to imido has little effect on orbital mixing between the U 5f and equatorial Cl 3p orbitals. The results are presented in the context of recent Cl K-edge XAS and DFT studies on other hexavalent uranium chloride systems with fewer oxo or imido ligands.

  13. RADIOCARBON, Vol 49, Nr 2, 2007, p 10931102 2007 by the Arizona Board of Regents on behalf of the University of Arizona 2007 by the Arizona Board of Regents on behalf of the University of Arizona

    E-Print Network [OSTI]

    Neff, Jason

    in the proportion of lignin- and polysaccharide-derived SOM in these soils measured using pyrolysis 49, Nr 2, 2007, p 1093­1102 1093 USING A SOIL CHRONOSEQUENCE TO IDENTIFY SOIL FRACTIONS FOR UNDERSTANDING AND MODELING SOIL CARBON DYNAMICS IN NEW ZEALAND Christine A Prior1 · W Troy Baisden2 · Frank

  14. 100-NR-2 Apatite Treatability Test: High-Concentration Calcium-Citrate-Phosphate Solution Injection for In Situ Strontium-90 Immobilization

    SciTech Connect (OSTI)

    Vermeul, Vincent R.; Fritz, Brad G.; Fruchter, Jonathan S.; Szecsody, James E.; Williams, Mark D.

    2010-09-01

    Following an evaluation of potential strontium-90 (90Sr) treatment technologies and their applicability under 100-NR-2 hydrogeologic conditions, the U.S. Department of Energy (DOE), Fluor Hanford, Inc. (now CH2M Hill Plateau Remediation Company [CHPRC]), Pacific Northwest National Laboratory, and the Washington State Department of Ecology agreed that the long-term strategy for groundwater remediation at the 100-N Area should include apatite as the primary treatment technology. This agreement was based on results from an evaluation of remedial alternatives that identified the apatite permeable reactive barrier (PRB) technology as the approach showing the greatest promise for reducing 90Sr flux to the Columbia River at a reasonable cost. This letter report documents work completed to date on development of a high-concentration amendment formulation and initial field-scale testing of this amendment solution.

  15. 74 NAW 5/4 nr. 1 maart 2003 Column: Wiskundigen in den vreemde Sandjai Bhulai Sandjai Bhulai

    E-Print Network [OSTI]

    Bhulai, Sandjai

    Laboratories, Lucent Technologies Room 2C-308, 700 Mountain Avenue Murray Hill, New Jersey, 07974-0636, USA communicatienetwerken. Telecomgiganten waren, na de acceptatie van de wet, bereid om een veelvoud van elke ge Carols ten ge- hore brengen. Bij het bekende Rockefeller Center, waar sinds 1931 elk jaar (met

  16. EQ3NR, a computer program for geochemical aqueous speciation-solubility calculations: Theoretical manual, user`s guide, and related documentation (Version 7.0); Part 3

    SciTech Connect (OSTI)

    Wolery, T.J.

    1992-09-14

    EQ3NR is an aqueous solution speciation-solubility modeling code. It is part of the EQ3/6 software package for geochemical modeling. It computes the thermodynamic state of an aqueous solution by determining the distribution of chemical species, including simple ions, ion pairs, and complexes, using standard state thermodynamic data and various equations which describe the thermodynamic activity coefficients of these species. The input to the code describes the aqueous solution in terms of analytical data, including total (analytical) concentrations of dissolved components and such other parameters as the pH, pHCl, Eh, pe, and oxygen fugacity. The input may also include a desired electrical balancing adjustment and various constraints which impose equilibrium with special pure minerals, solid solution end-member components (of specified mole fractions), and gases (of specified fugacities). The code evaluates the degree of disequilibrium in terms of the saturation index (SI = 1og Q/K) and the thermodynamic affinity (A = {minus}2.303 RT log Q/K) for various reactions, such as mineral dissolution or oxidation-reduction in the aqueous solution itself. Individual values of Eh, pe, oxygen fugacity, and Ah (redox affinity) are computed for aqueous redox couples. Equilibrium fugacities are computed for gas species. The code is highly flexible in dealing with various parameters as either model inputs or outputs. The user can specify modification or substitution of equilibrium constants at run time by using options on the input file.

  17. Interim Report: 100-NR-2 Apatite Treatability Test: Low Concentration Calcium Citrate-Phosphate Solution Injection for In Situ Strontium-90 Immobilization

    SciTech Connect (OSTI)

    Williams, Mark D.; Fritz, Brad G.; Mendoza, Donaldo P.; Rockhold, Mark L.; Thorne, Paul D.; Xie, YuLong; Bjornstad, Bruce N.; Mackley, Rob D.; Newcomer, Darrell R.; Szecsody, James E.; Vermeul, Vincent R.

    2008-07-11

    Following an evaluation of potential Sr-90 treatment technologies and their applicability under 100-NR-2 hydrogeologic conditions, U.S. Department of Energy, Fluor Hanford, Inc., Pacific Northwest National Laboratory, and the Washington Department of Ecology agreed that the long-term strategy for groundwater remediation at 100-N Area will include apatite sequestration as the primary treatment, followed by a secondary treatment if necessary (most likely phytoremediation). Since then, the agencies have worked together to agree on which apatite sequestration technology has the greatest chance of reducing Sr-90 flux to the river at a reasonable cost. In July 2005, aqueous injection, (i.e., the introduction of apatite-forming chemicals into the subsurface) was endorsed as the interim remedy and selected for field testing. Studies are in progress to assess the efficacy of in situ apatite formation by aqueous solution injection to address both the vadose zone and the shallow aquifer along the 300 ft of shoreline where Sr-90 concentrations are highest. This report describes the field testing of the shallow aquifer treatment.

  18. Nr. Name Vorname Titel Dissertation

    E-Print Network [OSTI]

    Bielefeld, Universität

    Marko Klaus Microcantilever Sensor Arrays: Nanomechanics, Electronic Noses and DNA Chips Dissertation durch DNA-Hybridisierung Master Feb 14 Bielefeld 203 Bauer Christian Zeitaufgelöste

  19. DEKRITISCHEKIJKOPPARANORMALEVERSCHIJNSELENENPSEUDOWETENSCHAP Jaargang 24 nr. 1

    E-Print Network [OSTI]

    Bier, Martin

    plaats gekomen, waaronder Low Energy Nuclear Reactions (LENR), Chemically Assisted Nuclear Reactions

  20. nr | National Nuclear Security Administration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26th AnnualHistoryMIII:National1-2130 1DevelopmentNovel

  1. tijdschrift van de ku leuven 19 december 2012 | nr 4 | 24ste ja argang | w w w.kuleuven.be/ck / verschijnt maandelijks,

    E-Print Network [OSTI]

    Davis, Jesse

    worden." ine van houdenhove "Sommige jaren haalt in bepaal- de regio's in Liberia geen enkel meisje een a whole community. En Liberia heeft vrouwelijke leiders nodig. We must walk alongside men." De Liberiaanse voor een fonds om jonge vrouwen uit de door conflict ge- teisterde West-Afrikaanse regio ­ Liberia

  2. Mitteilungsblatt Ausgabe Nr. 2/2006

    E-Print Network [OSTI]

    Steinhoff, Heinz-Jürgen

    des Nds. MWK vom 09.02.2006) 97 Agreement of Cooperation between Fachbereich Sprach- und Master-Studiengang fortsetzen zu können oder · in einem Studiengang ,,Master of Arts in Education

  3. Summary of NR Program Prometheus Efforts

    SciTech Connect (OSTI)

    Ashcroft, John [Space Energy Conversion, Lockheed Martin KAPL Inc. (United States); Eshelman, Curtis [Space Reactor Engineering, Bechtel Bettis Inc. (United States)

    2007-01-30

    The Naval Reactors Program led work on the development of a reactor plant system for the Prometheus space reactor program. The work centered on a 200 kWe electric reactor plant with a 15-20 year mission applicable to nuclear electric propulsion (NEP). After a review of all reactor and energy conversion alternatives, a direct gas Brayton reactor plant was selected for further development. The work performed subsequent to this selection included preliminary nuclear reactor and reactor plant design, development of instrumentation and control techniques, modeling reactor plant operational features, development and testing of core and plant material options, and development of an overall project plan. Prior to restructuring of the program, substantial progress had been made on defining reference plant operating conditions, defining reactor mechanical, thermal and nuclear performance, understanding the capabilities and uncertainties provided by material alternatives, and planning non-nuclear and nuclear system testing. The mission requirements for the envisioned NEP missions cannot be accommodated with existing reactor technologies. Therefore concurrent design, development and testing would be needed to deliver a functional reactor system. Fuel and material performance beyond the current state of the art is needed. There is very little national infrastructure available for fast reactor nuclear testing and associated materials development and testing. Surface mission requirements may be different enough to warrant different reactor design approaches and development of a generic multi-purpose reactor requires substantial sacrifice in performance capability for each mission.

  4. FMBl Nr. 1/20152 nderungder

    E-Print Network [OSTI]

    Schubart, Christoph

    Panama 28 101 Papua-Neuguinea 30 90 Paraguay 30 61 Peru 25 93 Philippinen 25 107 Polen - Breslau 27 92

  5. Internat. Math. Nachrichten Nr. 209 (2008), 1528

    E-Print Network [OSTI]

    Pottmann, Helmut

    2008-01-01

    methods. Introduction Complex freeform structures are one of the most striking trends in contemporary" [10]. Since available CAD software does not cover this topic, one may have to resort to simpler shapes mathematics and architectural design/ engineering. ISSN 0020-7926 c 2008 ¨Osterr. Math. Gesellschaft #12

  6. AFSLUTNINGSRAPPORT Journal nr. 33031-0066

    E-Print Network [OSTI]

    ethanol. Endelig er det testet at øge konceptets udbytte ved at producere biogas fra resten af det af gærceller. Fermentering (Xylose) Fermentering (Glucose) Fast brændstof Biogas proces ForbehandlingBiomasse BIOGAS ETHANOL Proces vand H2 Vådoxidation Enzymatisk hydrolysis + C6 fermentering Destillation Anaerob

  7. Summary of NR Program Prometheus Efforts

    SciTech Connect (OSTI)

    J Ashcroft; C Eshelman

    2006-02-08

    The Naval Reactors Program led work on the development of a reactor plant system for the Prometheus space reactor program. The work centered on a 200 kWe electric reactor plant with a 15-20 year mission applicable to nuclear electric propulsion (NEP). After a review of all reactor and energy conversion alternatives, a direct gas Brayton reactor plant was selected for further development. The work performed subsequent to this selection included preliminary nuclear reactor and reactor plant design, development of instrumentation and control techniques, modeling reactor plant operational features, development and testing of core and plant material options, and development of an overall project plan. Prior to restructuring of the program, substantial progress had been made on defining reference plant operating conditions, defining reactor mechanical, thermal and nuclear performance, understanding the capabilities and uncertainties provided by material alternatives, and planning non-nuclear and nuclear system testing. The mission requirements for the envisioned NEP missions cannot be accommodated with existing reactor technologies. Therefore concurrent design, development and testing would be needed to deliver a functional reactor system. Fuel and material performance beyond the current state of the art is needed. There is very little national infrastructure available for fast reactor nuclear testing and associated materials development and testing. Surface mission requirements may be different enough to warrant different reactor design approaches and development of a generic multi-purpose reactor requires substantial sacrifice in performance capability for each mission.

  8. NR Pu SEIS Advisory 07272012_Clean

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on771/6/14 Contact: JanetSite661.

  9. PO MA Ge Prfungsordnung fr den Master of Arts (M.A.) Geschichte Prfungsordnung fr den Studiengang

    E-Print Network [OSTI]

    Mannheim, Universität

    . 1 Landeshochschulgesetz (LHG) hat der Senat der Universität Mann- heim gemäß § 19 Abs. 1 Satz 2 Nr. 9 LHG am 27. Februar 2013 die nachstehende Satzung beschlossen. Der Rektor hat dieser zugestimmt am

  10. Microsoft Word - NR WIPP CONTRACT EXTENSION MAY 3 2010.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DOE Extends Management and Operations Contract at Waste Isolation Pilot Plant Carlsbad, NM. - The U.S. Department of Energy's Waste Isolation Pilot Plant (WIPP) today announced a...

  11. Ausgabe Nr. 07/2013 vom 26. September 2013

    E-Print Network [OSTI]

    Steinhoff, Heinz-Jürgen

    die Zulassung für den konsekutiven Master- studiengang ,,Mathematik" (Erlass des Nds. MWK vom 24 Rechtswissenschaften der Universität Osnabrück 1084 Agreement between the Pontifícia Universidade Católica do Rio Grande do Sul (Brazil) and the Osnabrück University (Germany) 1091 Direct Study Abroad Agreement between

  12. 2008-07-31 Draft NR Block Template

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    under the laws of the State of , to purchase and distribute electric power to serve retail consumer load from its distribution system within its...

  13. Nr. 184 / 2011 // 24. Oktober 2011 Erfolgreicher FAN-Abschluss

    E-Print Network [OSTI]

    Ullmann, G. Matthias

    von Stoffdatenmodellen auf dem Gebiet des Organic Rankine Cycle mit dem VDI-Preis ausgezeichnet. Dipl

  14. DISS ETH NO. 18573 TIK-Schriftenreihe Nr. 108

    E-Print Network [OSTI]

    starten mit einem Positionsdienst, der geographisches Routing zu mobilen Knoten erm¨oglicht. Dies ist

  15. FUNCTIONAL BLOCK DIAGRAM CLOCK NC REFCOM REFOUT IREFIN NR

    E-Print Network [OSTI]

    Berns, Hans-Gerd

    PRODUCT DESCRIPTION The AD768 is a 16-bit, high speed digital-to-analog converter (DAC) that offers switching technique to reduce glitch energy and maximize dynamic accuracy. Edge triggered input latches outputs may be interfaced to a transformer or differential amplifier. The on-chip reference and control

  16. Microsoft Word - 090723NR200WGW.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and radioactive contaminants. The facility will cover an area about the size of a football field and is expected to treat an estimated 25 billion gallons of groundwater...

  17. Nr. 272 / 2012 // 28. September 2012 Zweites Bioenergiesymposium

    E-Print Network [OSTI]

    Dettweiler, Michael

    Instituts für Umwelttechnik und Energiewirtschaft (IUE) der Technischen Universität Hamburg-Harburg, zum

  18. Microsoft Word - DE-NR0000031-075.doc

    National Nuclear Security Administration (NNSA)

    52.223-12 REFRIGERATION EQUIPMENT AND AIR CONDITIONERS (MAY 1995) 52.223-15 ENERGY EFFICIENCY IN ENERGY CONSUMING PRODUCTS (DEC 2007) 52.223-16 IEEE 1680 STANDARDS FOR THE...

  19. Nr. 035 / 2014 // 25. Februar 2014 4.979 Zeichen

    E-Print Network [OSTI]

    Ullmann, G. Matthias

    Adenosintriphosphat (ATP) erzeugt, das als zelleigener Energiespeicher bekannt ist. Enzyme ermöglichen und steuern

  20. Microsoft Word - Beryllium Report Released NR - FINAL.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    RELEASE: Geoff Tyree (509) 376-4171 June 2, 2010 INDEPENDENT INSPECTION FINDS HANFORD BERYLLIUM PROGRAM IMPROVED, BUT MORE WORK NEEDED Richland, WA - The Department of Energy today...

  1. DISS. ETH NO. 17731 TIK-Schriftenreihe Nr. 96

    E-Print Network [OSTI]

    for a short period of time. Consequently, there are frequent mem- bership changes and p2p systems are highly

  2. Nr. 299 / 2010 // 19. Oktober 2010 kologische Wirkungen

    E-Print Network [OSTI]

    Ullmann, G. Matthias

    Veränderungen in der Landnutzung können sowohl Biodiversität als auch Ökosystemdienstleistungen, wie die von Landnutzung und Produkten aus der Landwirtschaft sowie der Forstwirtschaft zu berechnen

  3. Nr. 55 / 2013 // 18. Mrz 2013 4.094 Zeichen

    E-Print Network [OSTI]

    Ullmann, G. Matthias

    ; schließlich auch landwirtschaft- liche Techniken, die womöglich alte Formen der Landnutzung auf neue Weise

  4. 2008-07-31 Draft NR Block Template

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservationBio-InspiredAtmosphericdevicesPPONe β+-Decay EvaluatedThe6 Feature20078 NewsB O N

  5. NR WIPP Transportation Award Jan 9 2012f.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on771/6/14 Contact: JanetSite661.Environmental Management

  6. Microsoft Word - 090723NR200WGW.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on77 PAGE OF PAGES AMENDMENT OF9-1595:UFC 2300.00838:UFCNews Release

  7. DOE and HBCU MOU FINAL NR.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HAB Packet HanfordDOE Project TapsofofDouble ZeroHouseViaAIKEN, SC

  8. Microsoft Word - NR WIPP CONTRACT EXTENSION MAY 3 2010.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on77 PAGE OFDetection of Hydrates on Gas Bubbles duringbasedApril 1,

  9. DOE-NR CAB New Members.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HAB Packet HanfordDOE Project TapsofofDoubleReading1,7,Nov. 247 to8

  10. Microsoft Word - DE-NR0000031-001.rtf

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal GasAdministration Medal01 Sandia NationalSecurityNuclearH-canyon |I6 Page515G:I

  11. Microsoft Word - DE-NR0000031-075.doc

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal GasAdministration Medal01 Sandia NationalSecurityNuclearH-canyon |I6 Page515G:IITEM NO.

  12. Microsoft Word - DE-NR0000031-FY11.doc

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal GasAdministration Medal01 Sandia NationalSecurityNuclearH-canyon |I6 Page515G:IITEM

  13. LANSCE | Lujan Center | Highlights | Neutron Reflectometry (NR) at Lujan

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse Bergkamp Graduate student Subtask2 J.N.open toCelebrating LosCenter Helps

  14. NR Pu SEIS Advisory 07152010 _final_.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJessework usesof EnergyY-12 NationalNO FEAR Act Notice NONPSRS: Jim Giusti,

  15. NR SRNS Contract Extension Sept 6 2012.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJessework usesof EnergyY-12 NationalNO FEAR Act Notice NONPSRS: Jim

  16. NR-CAB Meeting March 25-26 2013.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJessework usesof EnergyY-12 NationalNO FEAR Act Notice NONPSRS: JimMarch 15,

  17. NR-WFR Plan for Comment July 8 2013.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJessework usesof EnergyY-12 NationalNO FEAR Act Notice NONPSRS: JimMarch

  18. Druckversion der Ausgabe Nr. 32 (Oktober 2014) TU|frei.haus Druckversion der Ausgabe Nr. 32 (Oktober 2014)

    E-Print Network [OSTI]

    Arnold, Anton

    ......................................................................... 16 Smart Energy ­ Hinter den Kulissen des größten Plus-Energie-Bürohochhauses Österreichs ....... 17

  19. 6.17. THE LOSSY VOICE-COIL INDUCTANCE 111 Solution. The impedance function is given by

    E-Print Network [OSTI]

    Leach Jr.,W. Marshall

    and Be = Im h (ZV C - RE)-1 i . The constants Re, nr, Xe, and nx are calculated as follows: nr = log [Ge (f1) /Ge (f2)] log (f2/f1) Re = 1 (2f1)nr Ge (f1) = 1 (2f2)nr Ge (f2) nx = log [Be (f1) /Be (f2)] log (fb/fa) Xe = -1 (2f1)nx Be (f1) = -1 (2f2)nx Be (f2) (6.56) Example 13 Calculate Re, nr, Xe, and nx

  20. SCHWARZ cyan magenta yellowNr. 35 DIE ZEIT S. 34 Nr. 35 S.34 SCHWARZ cyan magenta yellowDIE ZEIT

    E-Print Network [OSTI]

    Töne von externen Speichern zu »streamen«, so das neue Verb, muss ein Computer im Netz sein, auf dem Apples Programm iTunes läuft. Die Daten laufen also von der Festplat- te zum Computer, von dort zum TV sei, da man dort Versuche mit einem humanpathogenen Virus gemacht habe. Auch stürben alle Schafe

  1. 25ste jaargang | nr. 6 | nr. 213 | afgiftekantoor Gent X | periodiek tijdschrift | verschijnt tweemaandelijks | P409859 | afzendadres: Onderbergen 1, 9000 Gent

    E-Print Network [OSTI]

    Gent, Universiteit

    ? universiteit gent ruimte transport energie wonen #12;juli»1-15 augustus»8-31 september»1-23* Sint;11 E-Cube naar finale Solar Decathlon 2 Jostein Gripsrud bekijkt ons natiegevoel 8 Wat doen UGent van Solar Decathlon, een prestigieuze wedstrijd die studenten aanzet een energievriendelijke woning te

  2. Matr.nr. 1203 1204 1205 1206 Matr.nr. Status Pong Status Pong Status Pong Status Pong Status Pong Status Pong Pong

    E-Print Network [OSTI]

    Zevenhoven, Ron

    0 0 0 0 0 0 0 33197 33316 0 0 0 0 0 0 0 33316 33633 0 0 L3 0.75 OK 1 L2 0 L2 0 1.75 33633 34365 OK 1 OK 1 L3 0.75 OK 1 L2 0.5 L2 0.75 5 34365 34660 0 0 0 0 0 0 0 34660 34752 L3 0.5 L3 0.5 L3 0.75 OK 1 0 0 2.75 34752 34890 OK 1 OK 1 L3 0.5 OK 1 L2 0 OK 1 4.5 34890 34891 0 0 0

  3. Colorado Statewide Forest Products Industry Profile

    E-Print Network [OSTI]

    employees) ­ 2 Wyoming Sawmill Closures (> 300 employees) ­ 3 New Pellet Manufacturers ­ 2 New (?) Excelsior and Pole 27 10 4 Log Furniture 20 26 NR Excelsior 3 1 1 Pellets 3 0 0 Firewood >70 NR NR Totals >174 133 95 Hazardous Fuels Contractors >200 NR NR Insect and Disease Preventative Spraying 52 NR NR #12;Wood Product

  4. Digit Representations Helmut Knaust, Department of Mathematical Sciences, UTEP, El Paso TX 79968

    E-Print Network [OSTI]

    Knaust, Helmut

    ]:= DigitRepresentation fraction_, base_: 10 : Module nr fraction, b, d1, d2, d3, fp, d, pos , b base; d1, nr ; nr b nr; d Append d, IntegerPart nr ; nr nr IntegerPart nr ; ; pos Position fp, nr 1, 1 ; d2 If pos 1, d 1 ;; pos 1 , ; d3 d pos ;; Length d ; Print If b 10, "", " " , d1, ".", If d2 , "", Integer

  5. R''O NR2''' Oxidation States of Organic Functional Groups

    E-Print Network [OSTI]

    to alkoxysulfonium salt formation. This intermediate breaks down under basic conditions to furnish the carbonyl compound and dimethyl sulfide. Fenselau, A. H.; Moffatt, J. G. J. Am. Chem. Soc. 1966, 88, 1762!1765. Lee

  6. Meteoritics & Planetary Science 39, Nr 9, 14751493 (2004) Abstract available online at http://meteoritics.org

    E-Print Network [OSTI]

    Cohen, Barbara Anne

    2004-01-01

    Science Institute, Tucson, Arizona, USA 2University of Arizona, Lunar and Planetary Laboratory, Tucson (Kring et al. 1996). L chondrites record a number of dominant impact events. Uranium/thorium-helium, K

  7. Zeszyty Naukowe Katedry Mechaniki Stosowanej, nr 18/2002 Andrzej POWNUK1

    E-Print Network [OSTI]

    Pownuk, Andrzej

    but we can estimate the interval ],[^ +- = hhh such that: +- hhh (13) In this case we don't need any

  8. 1709 The Meteoritical Society, 2008. Printed in USA. Meteoritics & Planetary Science 43, Nr 10, 17091723 (2008)

    E-Print Network [OSTI]

    Downs, Robert T.

    2008-01-01

    . COSTIN2, and R. T. DOWNS2 1Mailcode KT, NASA Johnson Space Center, 2101 NASA Parkway, Houston, Texas *Corresponding author. E-mail: kevin.righter-1@nasa.gov (Received 25 November 2007; revision accepted 27 May 2008 and Baird 1979; Clark and van Hart 1981), the Mars Global Surveyor Gamma Ray Experiment, Mars Express

  9. Notiz Nr. 11 / 2012 // 14. Mrz 2012 Notizen aus der Universitt Bayreuth

    E-Print Network [OSTI]

    Ullmann, G. Matthias

    durch die Ausweitung der Windkraft neue Erzeugungsschwerpunkte, die mit den Verbrauchszentren im Süden

  10. Privatarkiv nr. Tek 4. Ms. 216-219, 234, 310-659,

    E-Print Network [OSTI]

    Tufto, Jarle

    -1932 Professor i mineralogi og geologi med malmforekomstlære og metallurgi for andre metaller enn jern Sønn av metallurgi og geologi, og i Freiberg, Clausthal, Leipzig og Paris. I 1885 kom han tilbake til Kristiania og ble i 1886 utnevnt til professor i metallurgi, som hovedlærer for bergstudentene, som den yngste på

  11. Amtliche Bekanntmachung 2009 Ausgegeben Karlsruhe, den 28. August 2009 Nr. 76

    E-Print Network [OSTI]

    Stein, Oliver

    Wirtschaftsmathematik Aufgrund von § 34 Abs. 1, Satz 1 des Landeshochschulgesetzes (LHG) vom 1. Januar 2005 hat die

  12. Amtliche Bekanntmachung 2007 Ausgegeben Karlsruhe, den 11. Juni 2007 Nr. 36

    E-Print Network [OSTI]

    Stein, Oliver

    Technische Volkswirtschaftslehre Aufgrund von § 34 Absatz 1 Satz 1 des Landeshochschulgesetzes (LHG) vom 1

  13. Amtliche Bekanntmachung 2008 Ausgegeben Karlsruhe, den 18. August 2008 Nr. 65

    E-Print Network [OSTI]

    Stein, Oliver

    Landeshochschulgesetzes (LHG) vom 1. Januar 2005 hat der Senat der Universität Karlsruhe (TH) am 12. August 2005 die

  14. Vor ref.: NH/BLU/CBEI Notat nr.: 02-0346d

    E-Print Network [OSTI]

    : The report describes methods for reducing deposition of chlorides on boiler tubes in relation to biomass fractions - optimization of boiler air and fuel supply - additive dosing. Among those possibilities it has

  15. N.R. 20 FOSSIL-FUELED POWER PLANTS; 21 SPECIFIC NUCLEAR REACTORS...

    Office of Scientific and Technical Information (OSTI)

    20 FOSSIL-FUELED POWER PLANTS; 21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS; 14 SOLAR ENERGY; 15 GEOTHERMAL ENERGY; GEOTHERMAL POWER PLANTS; COMPUTERIZED SIMULATION; HEAT...

  16. Cite this: DOI: 10.1039/c4nr06411a Received 31st October 2014,

    E-Print Network [OSTI]

    Xiong, Qihua

    ,a Qihua Xiong,b,d Dongzhi Chia and Shijie Wang*a The two-dimensional layer of molybdenum disulfide (MoS2 by the second-step thermal sulfurization. More recently, a seeding promoter has been used to improve the CVD

  17. 100-NR-2 Apatite Treatability Test: Fall 2010 Tracer Infiltration Test (White Paper)

    SciTech Connect (OSTI)

    Vermeul, Vincent R.; Fritz, Brad G.; Fruchter, Jonathan S.; Greenwood, William J.; Johnson, Timothy C.; Horner, Jacob A.; Strickland, Christopher E.; Szecsody, James E.; Williams, Mark D.

    2011-04-14

    The primary objectives of the tracer infiltration test were to 1) determine whether field-scale hydraulic properties for the compacted roadbed materials and underlying Hanford fm. sediments comprising the zone of water table fluctuation beneath the site are consistent with estimates based laboratory-scale measurements on core samples and 2) characterize wetting front advancement and distribution of soil moisture achieved for the selected application rate. These primary objectives were met. The test successfully demonstrated that 1) the remaining 2 to 3 ft of compacted roadbed material below the infiltration gallery does not limit infiltration rates to levels that would be expected to eliminate near surface application as a viable amendment delivery approach and 2) the combined aqueous and geophysical monitoring approaches employed at this site, with some operational adjustments based on lessons learned, provides an effective means of assessing wetting front advancement and the distribution of soil moisture achieved for a given solution application. Reasonably good agreement between predicted and observed tracer and moisture front advancement rates was observed. During the first tracer infiltration test, which used a solution application rate of 0.7 cm/hr, tracer arrivals were observed at the water table (10 to 12 ft below the bottom of the infiltration gallery) after approximately 5 days, for an advancement rate of approximately 2 ft/day. This advancement rate is generally consistent with pre-test modeling results that predicted tracer arrival at the water table after approximately 5 days (see Figure 8, bottom left panel). This agreement indicates that hydraulic property values specified in the model for the compacted roadbed materials and underlying Hanford formation sediments, which were based on laboratory-scale measurements, are reasonable estimates of actual field-scale conditions. Additional work is needed to develop a working relationship between resistivity change and the associated change in moisture content so that 4D images of moisture content change can be generated. Results from this field test will be available for any future Ca-citrate-PO4 amendment infiltration tests, which would be designed to evaluate the efficacy of using near surface application of amendments to form apatite mineral phases in the upper portion of the zone of water table fluctuation.

  18. 261 The Meteoritical Society, 2009. Printed in USA. Meteoritics & Planetary Science 44, Nr 2, 261284 (2009)

    E-Print Network [OSTI]

    2009-01-01

    maskelynitization of plagioclase, melt pockets, and the presence of a relict pyroxferroite grain. Petrography, Fe-Ti oxides, and minor late-stage phases. Petrography, bulk chemistry, mineral compositions

  19. Meteoritics & Planetary Science 41, Nr 2, 263284 (2006) Abstract available online at http://meteoritics.org

    E-Print Network [OSTI]

    2006-01-01

    ://meteoritics.org 263 © The Meteoritical Society, 2006. Printed in USA. Petrography and geochemistry of five new Apollo 24 August 2005) Abstract­We present the petrography and geochemistry of five 2­4 mm basalt fragments, we present the petrography and geochemistry of five new basaltic fragments from the Apollo 16 site

  20. Meteoritics & Planetary Science 42, Nr 3, 413466 (2007) http://meteoritics.org

    E-Print Network [OSTI]

    Connolly Jr, Harold C.

    2007-01-01

    chondrules up to 5 mm in diameter. Petrography: (E. Gnos, UBE; B. Hofmann, NMBE) Average olivine (Fa18, weathered fusion crust. Petrography: Visible relict chondrules (0.2­1.4 mm) embedded in a recrystallized with partial fusion crust was found in 1999. Petrography and mineral compositions: (T. Arai, NIPR) Feldspathic

  1. 87 The Meteoritical Society, 2009. Printed in USA. Meteoritics & Planetary Science 44, Nr 1, 8794 (2009)

    E-Print Network [OSTI]

    2009-01-01

    flow. We present a detailed study of petrography, mineral chemistry, and shock deformation features University. Analytical methods are as those described by Day et al. (2006). Petrography and Textures LAP

  2. Columns CHIMIA 2014, 68, Nr. 5 333 Can you show us your analytical highlight?

    E-Print Network [OSTI]

    Gilli, Adrian

    phosphorus loading on bottom-water O2 . Applying this method to cores from shallower water depths revealed-resolution manganese (Mn) and iron (Fe) element profiles. As the sediment core contains semi-annual laminations (i, but this has never before been validated with monitoring data. Using the Lake Zurich core, we could show

  3. Meteoritics & Planetary Science 41, Nr 5, 785796 (2006) Abstract available online at http://meteoritics.org

    E-Print Network [OSTI]

    Zare, Richard N.

    2006-01-01

    @mail.arc.nasa.gov (Received 16 November 2005; revision accepted 03 February 2006) Abstract­The polycyclic aromatic nitrogen water or water mixed with methanol or methane and exposed to ultraviolet (UV) radiation. Upon warming photolysis of the methanol- and methane-containing ices. In addition, possible methoxyquinolines or quinoline

  4. 34 Kemivrlden Biotech med Kemisk Tidskrift. Nr 6 Oktober 2015 Effektivare solceller

    E-Print Network [OSTI]

    Linke, Heiner

    många vävnadstyper. I hud och hår finns två vari- anter: pheomelanin, typiskt för rödhåriga personer och eumelanin som finns i större mängd i mörkt hår och hud. Sambandet mellan hudcancer och solexponering moti

  5. http://www.bls.gov/news.release/osh.nr0.htm

    National Nuclear Security Administration (NNSA)

    in the information sector (NAICS 51) where industries in NAICS subsector 516 (Internet publishing and broadcasting) are reclassified elsewhere (eliminating NAICS 516) and...

  6. Meteoritics & Planetary Science 39, Nr 6, 787790 (2004) Abstract available online at http://meteoritics.org

    E-Print Network [OSTI]

    Claeys, Philippe

    2004-01-01

    exploratory program by PEMEX with intermittent core recovery and, more recently, by the National University, magnetotelluric and offshore seismic surveys, pre-existing boreholes of PEMEX and UNAM programs, site conditions

  7. Die ,,Erfolgsstory der Windenergie" (s. EINBLICKE Nr. 32, 2000) setzt sich

    E-Print Network [OSTI]

    Heinemann, Detlev

    has a scientific consulting role in the installation of Germany's first offshore wind-park off wissenschaftlich begleitet. Wind power is an essential element for achieving the target of supplying 20% of Germany's energy consumption through means of renewable energy by the year 2020.The use of offshore

  8. Wasserbau und Wasserkraft32 Fachbeitrge KWKorrespondenz Wasserwirtschaft 2009 (2) Nr. 1 www.dwa.de/KW

    E-Print Network [OSTI]

    Cirpka, Olaf Arie

    with a flood event and also influences the routing and configu- ration of the road alongside the barrage dam of this classification and the design of the weir systems as well as the existence of roads alongside barrage dams and comments the results. Key words: hydraulic engineering, barrage system, barrage, weir system

  9. Nr. 227 / 2014 // 26. Nov. 2014 Panorama mit aufgeforsteten Kieferplantagen und Viehweiden.

    E-Print Network [OSTI]

    Ott, Albrecht

    untersucht Landnutzungs-Konzepte in tropischen Bergwäldern Wie lässt sich die Abholzung von tropischen der Wasserhaushalt sowie die Akzeptanz durch die Landwirte. Nachhaltige Landnutzung Das

  10. Notiz Nr. 41 / 2011 // 3. November 2011 Notizen aus der Universitt Bayreuth

    E-Print Network [OSTI]

    Ullmann, G. Matthias

    : Prähistorische Landnutzung und holozäne Umweltentwicklung im 6012 Zeichen 166 Zeilen ca. 60 Anschläge

  11. Nr. 012 // 2014 // 24. Januar 2014 Klima-und Umweltwandel im Sahel

    E-Print Network [OSTI]

    Schmidt, Matthias

    Maßstabsebene darstellt und welche Zusammenhänge zwischen Klima, Landnutzung und Vegetations- veränderung mögliche Konsequenzen von Umweltwandel, Klima und Landnutzung, werden sogenannte Umweltflüchtlinge

  12. EINBLICKE Nr. 49 / FRHJAHR 2009 -CARL VON OSSIETZKY UNIVERSITT OLDENBURG MACHT GRNER STROM GLCKLICH?

    E-Print Network [OSTI]

    , Arbeitslosigkeit und Inflation, aber auch Umweltbedingungen wie Luftverschmutzung und das Klima. Die Erkenntnisse

  13. Nr. 54 / 2013 // 18. Mrz 2013 Neu an der Universitt Bayreuth

    E-Print Network [OSTI]

    Ullmann, G. Matthias

    Systemanalyse und Erneuerbare Energien an der Universität Stuttgart zusammen. Der Projektteil von Professor

  14. Lfd Nr Spender Art der Spende Verwendungszweck Betrag Udo Keller Stiftung Forum

    E-Print Network [OSTI]

    Wolkenhauer, Olaf

    Rechtsanwaltsgesellschaft mbH Geldspende Rostocker Bioenergieforum - AUF 1.000,00 6. Ölmühle Anklam Geldspende Förderung

  15. Microsoft Word - NR DRAFT RFP WIPP M&O APR 1 2011

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on77 PAGE OFDetection of Hydrates on Gas Bubbles duringbasedApril 1,

  16. Microsoft Word - NR WIPP TECH ASSISTANCE RFQ MAY 3 2010.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on77 PAGE OFDetection of Hydrates on Gas Bubbles duringbasedApril

  17. Microsoft Word - NR WIPP TRANSPORT RFP MARCH 30 2011f2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on77 PAGE OFDetection of Hydrates on Gas Bubbles

  18. http://www.bls.gov/news.release/osh.nr0.htm

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal GasAdministration Medal01 Sandia4)9 FederalRivers and Streams MetadataEconomic News

  19. NR-SRS TRU Waste Shipments Milestone June 4 2013.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJessework usesof EnergyY-12 NationalNO FEAR Act Notice NONPSRS: JimMarch

  20. SRS Biomass Startup NR-03 12 12 - DOE FINAL.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservation of Fe(II) byMultidayAlumni > The2/01/12 Page 1NEWS MEDIA16,

  1. Common genetic variants, acting additively, are a major source of risk for autism

    E-Print Network [OSTI]

    2012-01-01

    NR: Estimating the proportion of variation in susceptibilityNR: Estimating the proportion of variation in susceptibility

  2. Diffusion in SiGe and Ge

    E-Print Network [OSTI]

    Liao, Christopher Yuan Ting

    2010-01-01

    Claeys, et al. , "Si versus Ge for future microelectronics,"in Selectively Doped Si/Si x Ge 1-x Superlattices," PhysicalA. Fitzgerald, et al. , "Relaxed Ge x Si 1-x structures for

  3. GE's Digital Marketplace to Revolutionize Manufacturing | GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    an open online space for companies to collaborate and transform how they design and manufacture their products in the future NISKAYUNA, NY, June 2, 2015 - GE (NYSE:GE), a leading...

  4. CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GE 210 MATH 223CE 212 CMPT 116 Hum/SocSci Jr. GEOE 218 CE 225 MATH 224GE 213# GE 348# CE 295 English 11x# CE 315 CE 311

  5. Meteoritics & Planetary Science 43, Nr 1/2, 367397 (2008) Abstract available online at http://meteoritics.org

    E-Print Network [OSTI]

    Nittler, Larry R.

    2008-01-01

    are difficult to interpret because of the presence of compressed aerogel mixed with the grains. INTRODUCTION. 2006). The returned cometary samples were collected in aerogel. On a limited number of these grains, extracted from tracks formed by the impact of the grains into the aerogel (Fig. 1), a preliminary

  6. Meteoritics & Planetary Science 43, Nr 1/2, 285298 (2008) Abstract available online at http://meteoritics.org

    E-Print Network [OSTI]

    2008-01-01

    particles extracted from Stardust aerogel Thomas STEPHAN1*, George J. FLYNN2, Scott A. SANDFORD3; revision accepted 22 June 2007) Abstract­Sections of seven cometary fragments extracted from the aerogel aerogel with a total exposed surface area of 1039 cm2. In order to determine their elemental, isotopic

  7. Meteoritics & Planetary Science 43, Nr 1/2, 233246 (2008) Abstract available online at http://meteoritics.org

    E-Print Network [OSTI]

    2008-01-01

    in Stardust aerogel tracks Thomas STEPHAN1*, Detlef ROST2, Edward P. VICENZI2, Emma S. BULLOCK2, Glenn J; revision accepted 08 April 2007) Abstract­Cometary matter in aerogel samples from the Stardust mission. The analysis of organic compounds in aerogel samples is complicated by the presence of contaminants

  8. Meteoritics & Planetary Science 43, Nr 1/2, 161185 (2008) Abstract available online at http://meteoritics.org

    E-Print Network [OSTI]

    2008-01-01

    and interstellar dust. Low-density, SiO2-based aerogel was used as the primary medium to gently decelerate. These foils were mainly used to facilitate the removal of the aerogel tiles from the modular collector trays

  9. 6-DOF DESK-TOP VOICE-COIL JOYSTICK S.E. Salcudean and N.R. Parker

    E-Print Network [OSTI]

    Salcudean, Tim

    ABSTRACT This paper presents the design of a 6-DOF desk-top magnet- ically levitated force, for example, Hollis and Salcudean, 1993,Salcud- ean et. al., 1995, that magnetically levitated maglev Lorentz: rst, the electromechanical design of this haptic interface is presented. A simple methodol- ogy

  10. Rontgen-Freie-Elektronen-Laser European XFEL Abbildung 119: Modul Nr. 8 bei der Verladung zum Transport nach Saclay.

    E-Print Network [OSTI]

    ¨anemark, Deutschland, Frankreich, Griechen- land, Großbritannien, Italien, Polen, Russland, Schwe- den, Schweiz

  11. Meteoritics & Planetary Science 43, Nr 1/2, 315334 (2008) Abstract available online at http://meteoritics.org

    E-Print Network [OSTI]

    2008-01-01

    of organic, cometary C in both particles. Using energy-filtered and high-resolution imaging it was shown comet Wild 2 by impact into ultra-low density aerogel with an encounter velocity of 6.1 km/s-1 (Brownlee

  12. "Univers ingineresc" anul XVIII, nr. 16 (398), 16-31 august 2007 Maetri ai ingineriei calculatoarelor. Pagini de istorie

    E-Print Network [OSTI]

    Vintan, Lucian N.

    , utilizat la calculul tabelelor balistice de artilerie, proiectarea bombei cu hidrogen etc. La proiect au

  13. University of Illinois, COM at Chicago last updated by NR 6/23/15 Medical Student Guide

    E-Print Network [OSTI]

    Alford, Simon

    /Departments Office of Student Affairs 112 College of Medicine West 1853 West Polk Street (M/C 785) Phone: (312) 996 Polk Street (M/C 785) Chicago Illinois 60612-7332 Phone: (312) 996-9030 E-Mail: UGME@uic.edu http://chicago.medicine.uic.edu/ugme Office of the Registrar 120 College of Medicine West 1853 West Polk Street (M/C 785) Phone: 312

  14. E&nr Ph. S. W.. Wahhgt~n. D.C. 200242174, TIkpbnc (202) 48a60uo

    Office of Legacy Management (LM)

    Cornell University and Medical College Fordham University Long Island College of Medicine. Polytechnic Institute of Brooklyn Rensselaer Polytechnic Institute Rockefeller...

  15. Sandjai Bhulai Column: Wiskundigen in den vreemde NAW 5/3 nr. 4 december 2002 319 Sandjai Bhulai

    E-Print Network [OSTI]

    Bhulai, Sandjai

    Bell Laboratories, Lucent Technologies Room 2C-308, 700 Mountain Avenue Murray Hill, New Jersey, 07974 de eerste re- gel "Escort Required" luidde, moest elke dag opnieuw aangemaakt worden. Elke ochtend

  16. E&nr Ph. S. W.. Wahhgt~n. D.C. 200242174, TIkpbnc (202) 48a60uo

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers CoMadison -T: Designation ofSEP 2Dr.Wm.*

  17. CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 ME 227 GE 213# MATH 223 EE 201ME 214 CMPT 116 ME 215 GE 226 MATH 224 Hum/SocSci@# ME 251 ME 229 ME 318 ME 335 ME 313

  18. A COMPARISON OF DIFFERENT HAPTIC COMPRESSION TECHNIQUES Cyrus Shahabi, Antonio Ortega, Mohammad R. Kolahdouzan

    E-Print Network [OSTI]

    Shahabi, Cyrus

    -NLM GRANT NR. R01-LM07061, NASA/JPL CONTRACT NR. 961518, DARPA AND USAF UNDER AGREEMENT NR. F30602 or molding a sculpture a certain way was also demonstrated using haptic interfaces [9], [10]. Haptic data

  19. GE ?????????????????4G?????...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A die containing 400 ohmic MEMS switches, as viewed under a microscope, atop a U.S. dime. This device, made with GE's...

  20. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 Hum/SocSci Jr. MATH 224 English 11x CHE 220CHE 210 CHE

  1. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 HSS@# MATH 224 English 11x CHE 220CHE 210 CHE 323 CHE

  2. Appendix C: Transmission, Ancillary and Control Area Service...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Power and Conservation Planning Council NPV net present value NR New Resource Firm Power NRFS NR Resource Flattening Service NT Network Integration NTSA Non-Treaty Storage...

  3. GE Research and Development | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of rare Kaonforsupernovae model (Journal About DOE ButtonFSO HomefeatureGE

  4. GE Global Research Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear Physics (NP)about aMunich, GermanyAbout GE

  5. GE Researcher Discusses Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear Physics (NP)aboutRio de Janeiro,theIsGE

  6. Thermoelectric properties of nanoporous Ge

    E-Print Network [OSTI]

    Lee, Joo-Hyoung

    We computed thermoelectric properties of nanoporous Ge (np-Ge) with aligned pores along the [001] direction through a combined classical molecular dynamics and first-principles electronic structure approach. A significant ...

  7. GE Anna Heijbel / The Storm

    E-Print Network [OSTI]

    Tian, Weidong

    1 / GE Anna Heijbel / The Storm® Confocal Optics 50, 100, 200 µm 5 IQTL · ·DNA ·DNA Gels, blots, tissue sections (not in situ), radio-TLC & X-Ray diffraction #12;2 / GE Anna Heijbel / Phosphor µm 1010 43 x 35 cm43 x 35 cm Scanning Technology #12;3 / GE Anna Heijbel / Confocal Optics PMTPMT

  8. Departement Maschinenbau und Verfahrenstechnik

    E-Print Network [OSTI]

    Daraio, Chiara

    in Maschineningenieurwissenschaften Fokus Vertiefung: Mechatronik Fokus-Koordinator: B. Nelson Obligatorische Fächer LE-Nr. Dozent

  9. MEMBERSHIPS WITH A TAX FREE MEAL PLAN

    E-Print Network [OSTI]

    Boonstra, Rudy

    MEAL PLAN MEMBERSHIPS WITH A TAX FREE MEAL PLAN MEAL PLAN BENEFITS... WHERE MEAL PLANS ARE ACCEPTED. . . ELLESMERE ROAD ELLESMERE ROAD M ILITARY TRAIL N NR NR NR NR CC SL AA SW SY HW BV AC SRC JF SR SR SR SR SR SR, all Meal Plan Memberships are refundable but are subject to taxes (if applicable) and administration

  10. A Stochastic Reaction-Diffusion Active Transport Method for Studying the Control of Gene Expression in Eukaryotic Cells.

    E-Print Network [OSTI]

    Isaacson, Samuel

    !GDP Nuclear Export Receptor mRNAi + NR­Rti mRNA­NR­Rti at each nuclear mesh cell mRNA­NR­Rti m­NRi at each cytosolic mesh cell P­NRi + Rti Pi + NR­Rti at each nuclear mesh cell Pi + DNA DNARep at cell

  11. Characteristics of Sn segregation in Ge/GeSn heterostructures

    SciTech Connect (OSTI)

    Li, H.; Chang, C.; Chen, T. P.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shi, Z. W.; Chen, H. [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-10-13

    We report an investigation of Sn segregation in Ge/GeSn heterostructures occurred during the growth by molecular beam epitaxy. The measured Sn profile in the Ge layer shows that: (a) the Sn concentration decreases rapidly near the Ge/GeSn interface, and (b) when moving away from the interface, the Sn concentration reduced with a much slower rate. The 1/e decay lengths of the present system are much longer than those of the conventional group IV system of Ge segregation in the Si overlayer because of the smaller kinetic potential as modeled by a self-limited two-state exchange scheme. The demonstration of the Sn segregation shows the material characteristics of the heterostructure, which are needed for the investigation of its optical properties.

  12. CTu2J.4.pdf CLEO Technical Digest OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.4.pdf CLEO Technical Digest © OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells process for growing high-quality bulk Ge and Ge/SiGe quantum wells in selected areas of 3 µm thick silicon. Introduction and motivation Ge and especially Ge/SiGe quantum wells exhibit strong electroabsorption (Franz

  13. GE Partners on Microgrid Project | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    control platform which can be used to host intelligent grid management software for microgrids. A typical GE control platform which can be used to host intelligent grid management...

  14. GE Develops High Water Recovery Technology in China | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    purification industry SHANGHAI, September. 17, 2015 - A team of scientists led by the Coating and Membrane Technology Laboratory at GE's China Technology Center have successfully...

  15. GE Healthcare Product Guide 2007

    E-Print Network [OSTI]

    Lebendiker, Mario

    GE Healthcare BioProcess Product Guide 2007 #12;How to contact us Europe www.gehealthcare.com/bioprocess or by phone (T), fax (F), and Email Austria T: +43 1 57 606 1613 F: +43 1 57 606 1614 Email: cust.orderde@ge.com Belgium T: 0800 73890 F: 02 416 8206 Email: order.bnl@ge.com Central and East Europe (Austria) T: +43 1

  16. Magnetic Refrigeration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and it will become hotter. Move it away (demagnetization) and the food cools down. GE researchers predict the cooling refrigerators could reduce energy consumption by 20%, in...

  17. Flexible Energy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Opens in new window) Flexible Fuel Solutions Offer Efficient, Reliable Energy The world of power generation is evolving at lightning speed. GE is focused on staying one step...

  18. GE Energy Management Ancillary Services

    E-Print Network [OSTI]

    GE Energy Management Ancillary Services Definitions and Capability Study Part 2, Tasks 3-4, Final Online Wind Plants & Frequency Responsive Load Reserves

  19. Verffentlicht in den Amtlichen Bekanntmachungen der Universitt Ulm Nr. 17 vom 26.07.2011, Seite 180 -191 Promotionsordnung der Universitt Ulm fr die Graduiertenschule ,,International

    E-Print Network [OSTI]

    Pfeifer, Holger

    .) vom 19.07.2011 Aufgrund von § 38 Abs. 4 Satz 1 des Landeshochschulgesetzes (LHG) hat der Senat der hat am 19.07.2011 gemäß § 38 Abs. 4 Satz 1 LHG seine Zustimmung erteilt. Inhaltsverzeichnis

  20. Entwurf: 27.05.2004 Verffentlicht in den Amtlichen Bekanntmachungen der Universitt Ulm Nr. 17 vom 26.07.2011, Seite 192 -209

    E-Print Network [OSTI]

    Pfeifer, Holger

    -Württemberg (Landeshochschulgesetz ­ LHG) i.V.m. §§ 38 Abs. 2 Satz 5 und 6 in der Fassung vom 01. Januar 2005 (GBl. S. 1 ff), zuletzt. S. 793, 966), hat der Senat der Universität Ulm gemäß § 38 Abs. 4 Satz 1 LHG am 14.07.2011 die nachstehende Satzung beschlossen. Der Präsident der Universität hat am 19.07.2011 gemäß 38 Abs. 4 Satz 1 LHG

  1. Onsdag 17. august 2005 . nr. 157 . 2. rgang . Lssalg kr. 7,50 Telefon 701150 23 . www.idag.dk Tema: Side 9-16

    E-Print Network [OSTI]

    Nygård, Jesper

    _økonomi.indd 4 29/06/05 13:21:16 Køb HP online - www.hp.dk/hottepriser Grundfos fik godt første halvår 2005

  2. Multiple Irradiation Capsule Experiment (MICE)-3B Irradiation Test of Space Fuel Specimens in the Advanced Test Reactor (ATR) - Close Out Documentation for Naval Reactors (NR) Information

    SciTech Connect (OSTI)

    M. Chen; CM Regan; D. Noe

    2006-01-09

    Few data exist for UO{sub 2} or UN within the notional design space for the Prometheus-1 reactor (low fission rate, high temperature, long duration). As such, basic testing is required to validate predictions (and in some cases determine) performance aspects of these fuels. Therefore, the MICE-3B test of UO{sub 2} pellets was designed to provide data on gas release, unrestrained swelling, and restrained swelling at the upper range of fission rates expected for a space reactor. These data would be compared with model predictions and used to determine adequacy of a space reactor design basis relative to fission gas release and swelling of UO{sub 2} fuel and to assess potential pellet-clad interactions. A primary goal of an irradiation test for UN fuel was to assess performance issues currently associated with this fuel type such as gas release, swelling and transient performance. Information learned from this effort may have enabled use of UN fuel for future applications.

  3. Activation of Steroid and Xenobiotic Receptor (SXR, NR1I2) and Its Orthologs in Laboratory, Toxicologic, and Genome Model Species

    E-Print Network [OSTI]

    2008-01-01

    cerning low-dose effects of bisphenol A shows the need for an-Dipropyl phthalate Bisphenol A Fenvalerate Amitroltert- Octylphenol Amitrol Bisphenol A Benzophenone Carbaryl

  4. Activation of steroid and xenobiotic receptor (SXR, NR1/2) and its orthologs in laboratory, toxicologic, and genome model species

    E-Print Network [OSTI]

    2008-01-01

    cerning low-dose effects of bisphenol A shows the need for an-Dipropyl phthalate Bisphenol A Fenvalerate Amitroltert- Octylphenol Amitrol Bisphenol A Benzophenone Carbaryl

  5. SLU, Box 58, SE-230 53Alnarp, Sverige tel: +46 (0)40-4150 00 Org.nr 202100-2817 info@slu.se

    E-Print Network [OSTI]

    .slu.se 1(7) FUSE- Future Urban Sustainable Environments Caroline Dahl, projektledare STRATEGISK PLAN Strategisk plan för FUSE verksamhetsperiod 2013-2016 Projektnamn: Future Urban Sustainable Environment, FUSE

  6. tijdschrift van de ku leuven 28 ma art 2012 | nr 7 | 23ste ja argang | w w w.kuleuven.be/ck / verschijnt maandelijks,

    E-Print Network [OSTI]

    Davis, Jesse

    Dtalks' ontwikkelt `Pig cough monitor' [3] Een burcht voor uw bytes nieuw Datacentrum ku leuven is `state of the art

  7. DYNAMICS AND FUNCTION OF THE TEAR FILM IN RELATION TO THE BLINK CYCLE RJ Braun, PE King-Smith, CG Begley, Longfei Li and NR Gewecke

    E-Print Network [OSTI]

    DYNAMICS AND FUNCTION OF THE TEAR FILM IN RELATION TO THE BLINK CYCLE By RJ Braun, PE King and Function of the Tear Film in Relation to the Blink Cycle RJ Braun,1,4,6 PE King-Smith,2 CG Begley,3 Longfei: Department of Technology and Mathematics, Dalton State College, 650 College Drive, Dalton, GA 30720; ngewecke

  8. If you have trouble viewing this email, please let us know: pressoffice@naturalresourceswales.gov.uk NR/08/CD Date: 01/08/2013

    E-Print Network [OSTI]

    scientists and researchers to manage tree health more effectively. A team from Natural Resources Wales has of our broadleaved trees. Natural Resources Wales issued a rallying cry to help build a comprehensive high schools in Dolgellau and Tywyn joined Swyn Spencer of Natural Resources Wales and local Active

  9. Nr. 110 / 2014 // 17. Juni 2014 Preistrger Dr. Andreas Karolewski (Mitte) und Prof. Dr. Mukundan Thelakkat, Prof. Dr. Hans-Werner

    E-Print Network [OSTI]

    Ullmann, G. Matthias

    Elektronik oder auf dem Gebiet der Gewinnung und Nutzung erneuerbarer Energien. ,,Wir freuen uns und sind

  10. Radiocarbon, Vol 56, Nr 2, 2014, p 667678 DOI: 10.2458/56.17445 2014 by the Arizona Board of Regents on behalf of the University of Arizona

    E-Print Network [OSTI]

    Manning, Sturt

    AD MEDITERRANEAN SHIPBUILDING TRANSITION AT DOR/ TANTURA LAGOON, ISRAEL: DATING THE DOR 2001 in shipbuilding in the Mediterranean and northern Europe. This process is known as the "Transition in Construction

  11. Low-voltage broad-band electroabsorption from thin Ge/SiGe

    E-Print Network [OSTI]

    Miller, David A. B.

    Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using

  12. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 449# GE 110 Geological Engineering CE 271 GEOE 378 4TH YEAR 3RD YEAR 2ND YEAR 1ST YEAR or PHYS 128

  13. Miniaturized Turbine Offers Desalination Solution | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    salt from ice New solution draws from the GE Store, integrating GE's experience with steam turbine, oil & gas compressors, 3D printing and water processing NISKAYUNA, NY,...

  14. Energy Frontier Research Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    include GE Global Research, Yale University-Crabtree Group, Yale University-Batista Group, Stanford University and Lawrence Berkeley National Laboratory. GE Global...

  15. Edison Summit Brings GE Leaders Together | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    We are ONE Edison Aisha Yousuf 2014.03.21 "We are ONE Edison" was the theme of the first GE Global Edison Summit held February 16-18, 2014 at Coronado Springs Resort in Orlando,...

  16. GE Researcher Explores Science Behind Movie Chappie | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  17. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2005-2006 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 BusSci/HSS# GEOE 315 GEOE

  18. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 Hum/SocSci Jr. GEOE 315

  19. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window)...

  20. Recommended GE Curriculum for the BSEE Majors

    E-Print Network [OSTI]

    Ravikumar, B.

    Recommended GE Curriculum for the BSEE Majors Area Subjects Suggested GE Courses Courses Actual units GE Units A. Communication and Critical Thinking (9) A.2. Fund. of Communication ENGL 101 4 4 A.3, Theatre, Dance and Music and Film Select from the GE C.1 list in the SSU Catalog 3 3 C.2. Literature

  1. HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping of Ocular Dominance Columns

    E-Print Network [OSTI]

    HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping the contamination of non-specific large vessel signals. Animal studies have used non- conventional functional minimizing the contributions of extravascular BOLD signals around large vessels due to the refocusing pulse

  2. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

    E-Print Network [OSTI]

    Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques Gianni was arranged by Prof. C.K. Maiti Abstract Techniques for fabricating strained Si, SiGe, and Ge on-insulator include SIMOX, Ge condensation and wafer bonding. In this paper, a brief introduction of each method

  3. GeSi intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia)

    E-Print Network [OSTI]

    Ge­Si intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia) Laboratori December 1999 Exploiting Ge K-edge x-ray absorption spectroscopy we provide direct evidence of Si­Ge intermixing in self-organized strained and unstrained Ge quantum dots on Si, and provide a quantitative

  4. Nonlithographic epitaxial SnxGe1x dense nanowire arrays grown on Ge,,001...

    E-Print Network [OSTI]

    Atwater, Harry

    Nonlithographic epitaxial SnxGe1Àx dense nanowire arrays grown on Ge,,001... Regina Ragan-thick SnxGe1 x /Ge(001) epitaxial films with 0 x 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of SnxGe1 x nanowires oriented along 001 , as confirmed by composition contrast

  5. CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    ND YEAR 1ST YEAR 3RD YEAR # These courses can be taken in either term.*must meet specific Hum/SocSci@# Bus Sci/HSS#Design Elec.#* T.E.*# T.E.*#GE 449# ME 314 or PHYS 128 or GEOL 121 4TH YEAR 2

  6. GE Energy Management Ancillary Services

    E-Print Network [OSTI]

    GE Energy Management Ancillary Services Definitions and Capability Study Part 1, Tasks 1-2, FinalRose Michael O'Connor Sundar Venkataraman Revision 1 Date: 12/19/2012 #12;Ancillary Services Definitions.................................................................................................................... 7 3.1 Task 1: Identify and define ancillary services needed for integration of new generation

  7. PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON

    E-Print Network [OSTI]

    Kundu, Debasis

    PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON LIKELIHOOD RATIO proposes the use of likelihood ratio statistic in choosing between gamma and GE models or between Weibull and GE models. Probability of correct selec- tions are obtained using Monte Carlo simulations for various

  8. Understanding and engineering of NiGe/Ge junction formed by phosphorus ion implantation after germanidation

    SciTech Connect (OSTI)

    Oka, Hiroshi, E-mail: oka@asf.mls.eng.osaka-u.ac.jp; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji [Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2014-08-11

    Modulation of the effective electron Schottky barrier height (eSBH) of NiGe/Ge contacts induced by phosphorus ion implantation after germanide formation was investigated by considering local inhomogeneity in the eSBH. Systematic studies of NiGe/Ge contact devices having various germanide thicknesses and ion implantation areas indicated the threshold dopant concentration at the NiGe/Ge interface required for eSBH modulation and negligible dopant diffusion even at NiGe/Ge interface during drive-in annealing, leading to variation in the eSBH between the bottom and sidewall portions of the NiGe regions. Consequently, this method makes it possible to design source/drain contacts with low-resistivity Ohmic and ideal rectifying characteristics for future Ge-based transistors.

  9. Departement Maschinenbau und Verfahrenstechnik

    E-Print Network [OSTI]

    Daraio, Chiara

    . Obligatorische Fächer (mindestens 2 von 4) LE-Nr. Dozent Spra- che ECTS HS ECTS FS Experimental Methods. Mazzotti E 4 Wählbare Fächer (mindestens 2 von 6) LE-Nr. Dozent Spra- che ECTS HS ECTS FS Turbulent Flows

  10. SUBCHAPTER All INITIAL STATEMENT OF REASONS

    E-Print Network [OSTI]

    , Boilers and Water Heaters, January 20, 2012 NR SOLAR AND WATER HEATING Memo to Boiler CASE Initiative "Solar Ready Homes and Solar Oriented Development", September 2011 RES SOLAR & WATER Initiative "Nonresidential Solarready Buildings", September 2011 NR SOLAR & WATER HEATING CASE

  11. CX-001627: Categorical Exclusion Determination | Department of...

    Office of Environmental Management (EM)

    updated design of the NR cask and will be more robust structurally and provide more shielding than the current NR Casks. Construction of two TRCs is nearly finished and the INL...

  12. The multiple-point schemes of a finite curvilinear map of ...

    E-Print Network [OSTI]

    1910-30-30

    ?1. Nr. In this setting—in fact, in a more general setting—we prove the following statements, which show that Mr and Nr behave like reasonable schemes of ...

  13. Table 2 -Lime use and practices on Corn, major producing states, 2001 CO GA IL IN IA KS KY MI MN MO NE NY NC ND OH PA SD TX WI Area

    E-Print Network [OSTI]

    Kammen, Daniel M.

    MO NE NY NC ND OH PA SD TX WI Area Lime applied NR 85 81 85 67 16 72 55 27 65 10 57 53 NR 70 95 3 1 50 51 Lime (tons treated acre) NR 1.0 2.1 1.9 2.5 2.1 2.4 2.0 2.6 2.8 1.5 1.9 1.1 NR 1.9 1.7 NR 0.5 2 NC ND OH PA SD TX WI Area Lime applied NR 95 90 69 18 69 71 14 77 16 76 99 NR 82 80 NR 5 58 54 Lime

  14. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    Engineering * must meet specific requirements # These courses can be taken in either term. 2ND YEAR 3RD YEAR 4 431 Last editted Apr 4, 2006 ^offered in alternate years; take in either 3rd or 4th year CHEM 242TH YEAR 1ST YEAR CHE 422 CHE 232 HSS@# 2005-2006 or PHYS 128 or GEOL 121 or AB E 312 GE 300# CHE 332

  15. Phytologia (April 1, 2014) 96(2)110 Geographic variation in the volatile leaf oils J. phoenicea var. phoenicea from throughout its range

    E-Print Network [OSTI]

    Adams, Robert P.

    ) analyzed nrDNA and petN sequences for J. phoenicea L. (sensu stricto) from throughout the Mediterranean

  16. Phytologia (December 2011) 93(3) 293 TAXONOMY OF JUNIPERUS DELTOIDES

    E-Print Network [OSTI]

    Adams, Robert P.

    : LEAF TERPENOIDS AND SNPS FROM nrDNA AND petN Robert P. Adams Baylor University, Biology Department, One

  17. Zweite Satzung zur nderung der Satzung der Universitt Stuttgart fr die Vergabe von Deutschlandstipendien

    E-Print Network [OSTI]

    Reyle, Uwe

    Universität Stuttgart auf Grund von § 8 Abs. 5 und § 19 Abs. 1 Satz 2 Nr. 10 des Landeshochschulgesetzes (LHG

  18. Erste Satzung zur nderung der Allgemeinen Gebhrensatzung der Universitt Vom 30. Juli 2007

    E-Print Network [OSTI]

    Reyle, Uwe

    2007 Auf Grund von § 19 Abs. 1 Satz 2 Nr. 10 des Landeshochschulgesetzes (LHG) in Verbindung mit den

  19. Erste Satzung zur nderung der Satzung der Universitt Stuttgart fr die Vergabe von Deutschlandstipendien

    E-Print Network [OSTI]

    Reyle, Uwe

    Universität Stuttgart auf Grund von § 8 Abs. 5 und § 19 Abs. 1 Satz 2 Nr. 10 des Landeshochschulgesetzes (LHG

  20. Gemeinsame Prfungsordnung fr die Studiengnge Master of Science (M.Sc.) in Psychologie der Fakultt fr

    E-Print Network [OSTI]

    Mannheim, Universität

    Landeshochschulgesetz (LHG) hat der Senat der Universität Mannheim gemäß § 19 Abs. 1 Satz 2 Nr. 9 LHG am 27. Februar

  1. imulation und Optimierung der Standort- und Kapazit¨atsauswahl in der Planung von Ladeinfrastruktur fur batterieelektrische Fahrzeug?otten

    E-Print Network [OSTI]

    Siefen, Kostja

    2012-01-01

    Zeitschrift f¨ ur Energiewirtschaft (2011) [SLH09] Smith, H.In: Zeitschrift f¨ ur Energiewirtschaft 33 (2009), Nr. 2, S.

  2. LETTER Fast demographic traits promote high diversification rates of Amazonian trees

    E-Print Network [OSTI]

    Chave, Jérôme

    and Conservation, University of Kent, Canterbury, Kent CT2 7NR, UK 6 Facultad de Ingenieria Forestal, Universidad

  3. ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 120 ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224 ABE 295 ABE 212 can be taken in either term. GE 124 MATH 110 MATH 124CHEM 115 PHYS 155 3RD YEAR GE 125 GE 110 COMM 102

  4. Purdue, GE Collaborate On Advanced Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeedingProgramExemptionsProteinTotal natural gasPurchase, Delivery,Purdue, GE to

  5. About GE Global Research Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of raregovAboutRecovery Act Recovery ActARM OverviewAbout GE Global Research

  6. GE Scientists Experiment With Texas BBQ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (Journal Article)Forthcoming UpgradesArea:Benefits ofofStackOn thePower ofGE

  7. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    SciTech Connect (OSTI)

    Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2011-07-15

    Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

  8. MITTEILUNGSBLATT DES REKTORS

    E-Print Network [OSTI]

    Heermann, Dieter W.

    Heidelberg Mitteilungsblatt Nr. 19 / 2015 12.10.2015 Aufhebung des Master-Studienganges Unternehmensführung. Ingrid Reiher Dezernat 2 #12;1398 Universität Heidelberg Mitteilungsblatt Nr. 19 / 2015 12.10.2015 #12;1399 Universität Heidelberg Mitteilungsblatt Nr. 19 / 2015 12.10.2015 Promotionsordnung der Universität Heidelberg

  9. 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics

    E-Print Network [OSTI]

    Anderson, Timothy J.

    , Young Seok Kim, Olga Kryliouk* , and Tim Anderson Department of Chemical Engineering, University successfully reported; GaN NR growth by typical hydride vapor phase epitaxy (HVPE) [15], InN NR growth by hydride metal organic vapor phase epitaxy (H-MOVPE) from our efforts [9, 16], and AlN NR growth

  10. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D BGene NetworkNuclear SecurityChattanChemistry ofNanChevron, GE form

  11. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room News Publications Traditional Knowledge KiosksAboutHelp & Reference Users AdvAncedGE

  12. GE Global Research in San Ramon, California

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Careers Leadership Programs What's new in San Ramon Ars Technica: Analyzing the Internet of Things GE Unveils High-Speed Network Infrastructure to Connect Machines, Data...

  13. MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

    E-Print Network [OSTI]

    Fitzgerald, Eugene A.

    Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with ...

  14. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

  15. GE Turbine Parts www.edisonmachine.com

    E-Print Network [OSTI]

    Chiao, Jung-Chih

    GE Turbine Parts www.edisonmachine.com New authentic GE and Westinghouse Turbine Parts Muscle cars vehicle: Has the code for a hydrogen car been cracked? World-first working eukaryotic cell mad from's smallest windmills to power cell phones 1/17/2014http://www.gizmag.com/worlds-smallest-windmill-energy

  16. Growth and characterization of isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals

    SciTech Connect (OSTI)

    Itoh, K.

    1992-10-01

    Isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm[sup 3] volume. To our knowledge, we have grown the first [sup 70]Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be [approximately]2 [times] cm[sup [minus]3] which is two order of magnitude better that of [sup 74]Ge crystals previously grown by two different groups. Isotopic enrichment of the [sup 70]Ge and the [sup 74]Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

  17. Growth and characterization of isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals

    SciTech Connect (OSTI)

    Itoh, K.

    1992-10-01

    Isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm{sup 3} volume. To our knowledge, we have grown the first {sup 70}Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be {approximately}2 {times} cm{sup {minus}3} which is two order of magnitude better that of {sup 74}Ge crystals previously grown by two different groups. Isotopic enrichment of the {sup 70}Ge and the {sup 74}Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

  18. Monolithic Ge-on-Si lasers for integrated photonics

    E-Print Network [OSTI]

    Liu, Jifeng

    We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility ...

  19. Is there a risk from not using GE animals?

    E-Print Network [OSTI]

    Murray, James D.; Maga, Elizabeth A.

    2010-01-01

    Is there a risk from not using GE animals? James D. Murray •rst genetically engi- neered (GE) plants and animals forthe debate often focuses on GE as a technique that is used

  20. Xergy Ships First Breakthrough Water Heater Compressor to GE...

    Energy Savers [EERE]

    Xergy Ships First Breakthrough Water Heater Compressor to GE Xergy Ships First Breakthrough Water Heater Compressor to GE September 15, 2015 - 3:41pm Addthis Xergy Inc. and GE...

  1. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    who want to learn more about GE and its global Research Centers. For this purpose, the Aero & Thermal Systems groups of GE Global Research and representatives from several GE...

  2. Ge-on-Si laser for silicon photonics

    E-Print Network [OSTI]

    Camacho-Aguilera, Rodolfo Ernesto

    2013-01-01

    Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...

  3. Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure

    SciTech Connect (OSTI)

    Shibayama, Shigehisa [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan) [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)] [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2013-08-19

    The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

  4. Enhancement of thermal stability and water resistance in yttrium-doped GeO{sub 2}/Ge gate stack

    SciTech Connect (OSTI)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Hyun Lee, Choong; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2014-03-03

    We have systematically investigated the material and electrical properties of yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO{sub 2}/Ge stack, compared to that of pure GeO{sub 2}/Ge stack. The excellent electrical properties of Y-GeO{sub 2}/Ge stacks with low D{sub it} were presented as well as enhancement of dielectric constant in Y-GeO{sub 2} layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO{sub 2}.

  5. Testimonials - Partnerships in Fuel Cells - GE Global Research...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis An error occurred. Try watching this video on www.youtube.com, or enable...

  6. Work & Life at San Ramon | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    new window) Click to share on Tumblr (Opens in new window) Employee Organizations GE Software Women's Network TBD Celebrations GE Software Technology Conference This event allows...

  7. Rocket Science? No, It's Harder | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    says Juan Albeniz, Business Program Manager, Oil & Gas at GE Global Research Europe. Juan Albeniz, Business Program Manager, Oil & Gas at GE Global Research, Europe Juan...

  8. ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 120 ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224 ABE 295 ABE 212Elective* Elective* AB E 311 ABE 313 ABE 312 GE 348#ABE 323 co-requisite ABE 327 HSS#@ HSS#@ ABE 324 GE 300# ABE 395 4TH YEAR ABE Elec* ABE Elec* ABE Elec*ABE 422 GE 449# Ag Elec* T.E.* T.E.* ABE Elec* Ag Elec

  9. Thermal conductivity of sputtered amorphous Ge films

    SciTech Connect (OSTI)

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)] [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)

    2014-02-15

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids.

  10. Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

    SciTech Connect (OSTI)

    Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-21

    Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

  11. GE Appliances: Order (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  12. Researching NDE, Additive Manufacturing |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    I never thought I would get the incredible opportunity to become a summer intern at the GE Global Research Center, amongst such brilliant and tenacious individuals. I have been...

  13. GE's Christine Furstoss Named to NACIE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Niskayuna, NY, Christine is responsible for working with both R&D leaders at GE's industrial businesses and with strategic partners to set strategy for growth, and to...

  14. GE Announces Vic Abate as New Chief Technology Officer | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Internet and Brilliant Factory. This transition marks another chapter in GE's transformation to become the world's premiere Digital Industrial company. Enabled by a...

  15. Be a part of something bigger than yourself GE Healthcare

    E-Print Network [OSTI]

    Rimon, Elon

    Be a part of something bigger than yourself GE Healthcare Position: Mechanical Engineer as a contractor · Working at GE site at Tirat-Carmel. · Start: immediately · Duration 6-10 months, with optional elongation. ElgemsMoked@ge.com-CV www.gehealthcare.com We are GE Healthcare, a $17 billion division

  16. UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 201213 Includes course titles and Schedule of Classes designations

    E-Print Network [OSTI]

    Loudon, Catherine

    UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 2012­13 Includes course titles and Schedule of Classes designations GENERAL EDUCATION (GE) REQUIREMENT UCI is committed undergraduates complete a set of general education (GE) requirements. General education courses introduce

  17. 2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director of the National Institute for Advanced

    E-Print Network [OSTI]

    2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director, and emendation of all sorts of newly discovered texts (mostly found at archaeological sites). Professor Ge University, Professor Ge taught at Tsinghua University for a number of years. He is known for many important

  18. Measurement of the direct energy gap of coherently strained SnxGe1x Ge,,001... heterostructures

    E-Print Network [OSTI]

    Atwater, Harry

    Measurement of the direct energy gap of coherently strained SnxGe1Àx ÕGe,,001... heterostructures The direct energy gap has been measured for coherently strained SnxGe1 x alloys on Ge 001 substrates with 0 for coherently strained SnxGe1 x alloys indicates a large alloy contribution and a small strain contribution

  19. GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising

    E-Print Network [OSTI]

    de Lijser, Peter

    GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising 9% 13% 11% 13% 10% 8% Faculty can easily advise students on GE requirements 10% 18% 9% 24% 33% 11% Staff academic advisors can easily advise students on GE requirements 8% 11

  20. Relaxation and recombination processes in Ge/SiGe multiple quantum wells

    SciTech Connect (OSTI)

    Gatti, E., E-mail: gatti@mater.unimib.it; Giorgioni, A., E-mail: gatti@mater.unimib.it; Grilli, E., E-mail: gatti@mater.unimib.it; Guzzi, M., E-mail: gatti@mater.unimib.it [L-NESS and Università di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy); Chrastina, D.; Isella, G. [L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy); Chernikov, A.; Kolata, K.; Bornwasser, V.; Köster, N. S.; Woscholski, R.; Chatterjee, S. [Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)

    2013-12-04

    The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at ? is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

  1. DEPT COURSE # SECTION A B+ B C+ C D+ D F S U I AUD W WF NR TOTAL ACCT 222 300 15 0 10 3 14 0 7 2 0 1 0 0 8 2 0 62

    E-Print Network [OSTI]

    AERO 102 002 12 0 1 0 0 0 0 0 0 0 0 0 0 0 0 13 AERO 202 001 14 0 0 0 0 0 0 0 0 0 0 0 1 0 0 15 #12;DEPT ** For privacy reasons, courses containing fewer than 11 students are not show ** AERO 102L 001 0 0 0 0 0 0 0 0 14 1 0 0 1 0 0 16 AERO 202L 001 0 0 0 0 0 0 0 0 19 1 0 0 2 0 0 22 AFRO 201 001 2 2 3 0 5 0 0 0 0 0 0

  2. Dept/Course Section A B+ B C+ C D+ D F S U I AUD W WF NR Total ACCT 222 300 11 3 11 7 10 0 6 5 0 0 0 0 8 2 0 63

    E-Print Network [OSTI]

    0 0 46 AERO 101 001 5 1 3 1 2 0 1 2 0 0 0 0 2 0 0 17 AERO 101 002 7 9 6 0 1 0 0 2 0 0 0 0 0 0 0 25 3 USCCOLUMBIA *** For privacy reasons, courses with an enrollment of 11 persons or less are not shown *** AERO 101L 001 0 0 0 0 0 0 0 0 21 3 0 0 3 0 0 27 AERO 201 002 7 2 3 0 0 0 0 0 0 0 0 0 2 0 0 14 AERO 201L 001

  3. Laureates of the sCs faLL Meeting 2013 CHIMIA 2014, 68, Nr. 4 239 doi:10.2533/chimia.2014.239 Chimia 68 (2014) 239242 Schweizerische Chemische Gesellschaft

    E-Print Network [OSTI]

    Mühlemann, Oliver

    2014-01-01

    responsible for the transmission of nerve impulses in the peripheral and central nervous systems. Until now. Keywords: Granisetron · 5-HT3 receptor · Photoaffinity probes · Photo-labeling · Serotonin receptor Introduction In popular science serotonin is referred as a `happiness hormone'. Also known as 5

  4. RADIOCARBON, Vol 43, Nr 1, 2001, p 1525 2001 by the Arizona Board of Regents on behalf of the University of Arizona CHANGES OF SUBTROPICAL NORTH PACIFIC RADIOCARBON AND

    E-Print Network [OSTI]

    Schrag, Daniel

    of time scales. 14C is produced naturally in the upper atmosphere and as a result of thermonuclear bomb

  5. RADIOCARBON,Vol 42, Nr 2,2000, P 249-256 @2000 by the Arizona Board of Regents on behalf of the University of Arizona SOUTHWEST SUBTROPICAL PACIFIC SURFACE WATER RADIOCARBON IN A

    E-Print Network [OSTI]

    Schrag, Daniel

    to alter the coupled ocean-atmosphere system's internal oscillations such as ENSO, Guilderson and Schrag, it remains uncertain whether this shift is part of an underlying dynamically driven natural variability the extra-tropics and trop- tCenter for Accelerator Mass Spectrometry, Lawrence Livermore National

  6. Attachment Processes and Gene-Environment Interactions: Testing Two Initial Hypotheses Regarding the Relationship Between Attachment, and Methylation of the Glucocorticoid Receptor Gene (NR3C1) and the Serotonin Transporter Gene (SLC6A4)

    E-Print Network [OSTI]

    Jones-Mason, Karen Marie

    2011-01-01

    Energy (DOE) (2006). Human Genome Project Information: Thescience behind the human genome project. Doegenomes.org.sci/techresources/human_genome/project/info.shtml. De Kloet,

  7. DEPT COURSE SECTION A B+ B C+ C D+ D F S U I AUD W WF NR TOTAL ACCT 222 300 5 4 16 9 11 0 2 8 0 0 0 0 12 0 0 67

    E-Print Network [OSTI]

    10 0 1 0 0 0 0 0 0 0 0 0 0 39 AERO 102 001 7 2 3 0 1 0 0 0 0 0 0 0 0 0 0 13 AERO 102 002 7 3 8 0 0 0 0 0 0 0 0 0 3 0 0 21 AERO 102L 001 0 0 0 0 0 0 0 0 20 1 0 0 3 0 0 24 AERO 202L 001 0 0 0 0 0 0 0 0 11 0 0 0 4 0 0 15 AERO 302 001 7 4 3 0 0 0 0 0 0 0 0 0 0 0 0 14 AERO 302L 001 0 0 0 0 0 0 0 0 14 0 0

  8. DEPT COURSE SECTION A B+ B C+ C D+ D F S U I AUD W WF NR TOTAL ACCT 222 300 5 4 12 2 18 0 14 4 0 0 0 0 11 0 0 70

    E-Print Network [OSTI]

    001 52 8 4 0 0 0 0 0 0 0 1 0 2 0 0 67 AERO 101 001 17 0 3 0 0 0 0 0 0 0 0 0 2 0 0 22 AERO 101 002 18 0 3 0 0 0 0 0 0 0 0 0 0 0 0 21 AERO 201 001 16 0 0 0 0 0 0 1 0 0 0 0 0 0 0 17 AERO 301 001 9 0 2 0 1 0 0 0 0 0 0 0 0 0 0 12 AERO 101L 001 0 0 0 0 0 0 0 0 22 0 0 0 4 0 0 26 AERO 201L 001 0 0 0 0 0 0 0 0

  9. DEPT CRSE # SECT A B+ B C+ C D+ D F S U I AUD W WF NR TOTAL ACCT 222 300 8 4 14 5 10 0 7 6 0 0 0 0 18 0 0 72

    E-Print Network [OSTI]

    1 0 4 0 0 36 AERO 101 L001 0 0 0 0 0 0 0 0 15 1 0 0 1 1 0 18 AERO 201 001 11 1 1 0 0 0 0 0 0 0 0 0 2 0 0 15 AERO 201 002 13 2 1 1 0 0 0 0 0 0 0 0 1 0 0 18 AERO 201 L001 0 0 0 0 0 0 0 0 28 0 0 0 5 0 0 33 AERO 301 001 15 2 1 0 0 0 0 0 0 0 0 0 0 0 0 18 AERO 301 L001 0 0 0 0 0 0 0 0 18 0 0 0 0 0 0 18

  10. UNIVERSITY OF SOUTH CAROLINA COLUMBIA: SPRING 2009 GRADE DISTRIBUTION AS OF MAY 20, 2009 DEPT CRSE # SECT A B+ B C+ C D+ D F S U I AUD W WF NR TOTAL

    E-Print Network [OSTI]

    0 1 0 1 0 0 40 AERO 102 002 11 0 1 0 0 0 0 0 0 0 0 0 4 0 0 16 AERO 102 L001 0 0 0 0 0 0 0 0 20 0 0 0 3 0 0 23 AERO 202 002 13 0 2 0 0 0 0 0 0 0 0 0 1 0 0 16 AERO 202 L001 0 0 0 0 0 0 0 0 24 0 0 0 1 0 0 25 AERO 402 001 6 3 2 0 0 0 0 0 0 0 0 0 0 0 0 11 AFRO 201 001 8 2 13 4 5 1 3 1 0 0 2 0 0 0 0 39 AFRO

  11. DEPT CRSE # SECT A B+ B C+ C D+ D F S U I AUD W WF NR TOTAL ACCT 222 300 7 5 9 10 9 0 0 3 0 0 0 0 7 1 0 51

    E-Print Network [OSTI]

    32 ACCT 504 001 29 5 4 0 0 0 0 0 0 0 2 0 1 0 0 41 AERO 102 002 9 1 0 0 0 0 0 0 0 0 0 0 3 0 0 13 AERO 102 L001 0 0 0 0 0 0 0 0 14 0 0 0 3 0 0 17 AERO 202 001 10 0 2 0 0 0 0 0 0 0 0 0 1 0 0 13 AERO 202 L001 0 0 0 0 0 0 0 0 22 0 0 0 2 0 0 24 AERO 302 001 13 2 3 0 0 0 0 0 0 0 0 0 0 0 0 18 AFRO 201 001 22 2

  12. Aplinkos tyrimai, inzinerija ir vadyba, 2009. Nr. 2(48), P. 25-34 ISSN 1392-1649 Environmental Research, Engineering and Management, 2009. No. 2(48), P. 25-34

    E-Print Network [OSTI]

    growing in city forest parks and parks are exposed to the permanent higher air pollution level than trees green areas are relevant for city's natural self-purification from polluting substances (Beckett 1998 and nitrogen dioxide pollution is 30­50 % greater in cities than in relatively clean Lithuanian districts

  13. RADIOCARBON, Vol 49, Nr 2, 2007, p 00 2007 by the Arizona Board of Regents on behalf of the University of Arizona C:\\Documents and Settings\\Administrator\\Desktop\\Oxford to-

    E-Print Network [OSTI]

    Yu, Zicheng

    accelerator mass spec- trometry (AMS) 14C dates on plant remains, including 2 post-bomb dates. The age model and other paleo- climate records from east China, indicating a weakening summer monsoon resulting from and energy budget in southeast China (An et al. 2000). At the orbital time scale, monsoon intensity follows

  14. RADIOCARBON, Vol 47, Nr 1, 2005, p 3137 2005 by the Arizona Board of Regents on behalf of the University of Arizona RECONSTRUCTION OF THE 14C PRODUCTION RATE FROM MEASURED

    E-Print Network [OSTI]

    Usoskin, Ilya G.

    of the University of Arizona 31 RECONSTRUCTION OF THE 14C PRODUCTION RATE FROM MEASURED RELATIVE ABUNDANCE Ilya G method is presented for the reconstruction of the radiocarbon production rate from the measured relative), an inversion of this process (i.e. reconstruction of the production rate from the measured concentration

  15. Cloud Monitoring for Large Cosmic Ray Sites R.W. Clay, B.R. Dawson, R.T. Pace, D.S. Riordan, A.G.K. Smith, N.R. Wild

    E-Print Network [OSTI]

    OG 4.5.23 Cloud Monitoring for Large Cosmic Ray Sites R.W. Clay, B.R. Dawson, R.T. Pace, D monitoring of the cloud distribution in the night sky within the experimental fiducial volume. We have developed infra-red detectors which are capa- ble of responding to cloud in daytime or night-time. We

  16. Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties

    SciTech Connect (OSTI)

    Gatti, E., E-mail: eleonora.gatti@mater.unimib.it; Pezzoli, F.; Grilli, E. [L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 55, I-20125 Milano (Italy); Isa, F.; Chrastina, D.; Isella, G. [L-NESS and Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, I - 22100 Como (Italy); Müller Gubler, E. [Electron Microscopy Center of ETH Zürich (EMEZ), August-Piccard-Hof 1, CH-8093 Zürich (Switzerland)

    2014-07-28

    The epitaxial growth of Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum wells (MQWs) on Si(111) substrates is demonstrated. A 3??m thick reverse, double-step virtual substrate with a final composition of Si{sub 0.10}Ge{sub 0.90} has been employed. High resolution XRD, TEM, AFM and defect etching analysis has been used for the study of the structural properties of the buffer and of the QWs. The QW stack is characterized by a threading dislocation density of about 3?×?10{sup 7?}cm{sup ?2} and an interdiffusion layer at the well/barrier interface of 2.1?nm. The quantum confined energy levels of this system have been calculated using the k·p and effective mass approximation methods. The Ge/Si{sub 0.15}Ge{sub 0.85} MQWs have been characterized through absorption and photoluminescence measurements. The optical spectra have been compared with those of Ge/Si{sub 0.15}Ge{sub 0.85} QWs grown on Si(001) through a thick graded virtual substrate.

  17. Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay, Jonathan E. Roth, Rebecca K. Scheavitz, Yu-Hsuan Kuo*

    E-Print Network [OSTI]

    Miller, David A. B.

    Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay University, Taipei, Taiwan Abstract: We demonstrate an optical link on silicon employing Ge/SiGe quantum well of the quantum-confined Stark effect (QCSE) on silicon using Ge/SiGe quantum wells opened up the possibility

  18. 23 6 12 8:00 III-V/Ge CMOS

    E-Print Network [OSTI]

    Katsumoto, Shingo

    23 6 12 8:00 - 1 - 1. : III-V/Ge CMOS ~ 200%~ 2. : III-V (Ge) III-V/Ge CMOS (Si) 200% III-V/Ge CMOS 200% III-V/Ge CMOS () () () () III-V III-V/Ge CMOS (1) III-V Ge III-V/Ge CMOS (2) III-V-OI MOSFET (3) III-V/Ge CMOS "2011 Symposia on VLSI

  19. Measurement of the neutron-capture cross section of ??Ge and ??Ge below 15 MeV and its relevance to 0??? decay searches of ??Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bhike, Megha; Fallin, B.; Tornow, W.

    2015-02-01

    The neutron radiative-capture cross section of ??Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ~86% ??Ge and ~14% ??Ge used in the 0??? searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the ³H(p,n)³He, ²H(d,n)³He and ³H(d,n)?He reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for ??Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution ?-ray spectroscopy wasmore »used to determine the ?-ray activity of the daughter nuclei of interest. For the ??Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the ??Ge(n,?)??Ge reaction, the present data are about a factor of two larger than predicted. It was found that the ??Ge(n,?)??Ge yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the ??Ge(n,?)??Ge yield due to the larger cross section of the former reaction.« less

  20. Phase transitions in Ge-Sb phase change materials

    SciTech Connect (OSTI)

    Raoux, Simone; Virwani, Kumar; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-03-15

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T{sub x}) also show an increase with Ge concentration closely tracking the measured values of T{sub x}. For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity.

  1. Updated 8/28/2014 New GE Requirements & Environmental Studies Advising

    E-Print Network [OSTI]

    Updated 8/28/2014 New GE Requirements & Environmental Studies Advising Course Concentration(s) Lower Division GE Upper Division GE Overlay(s) AIS 310

  2. GE Lighting Solutions: Order (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE ordered General Electric Lighting Solutions, LLC to pay a $5,360 civil penalty after finding GE Lighting Solutions had manufactured and distributed in commerce in the U.S. 30 units of basic model DR4-RTFB-23B and 177 units (of which 85 units remain in inventory) of basic model DR4-RTFB-77A-002, noncompliant traffic signal modules.

  3. Viscosity Measurement G.E. Leblanc

    E-Print Network [OSTI]

    Kostic, Milivoje M.

    30 Viscosity Measurement G.E. Leblanc McMaster University R.A. Secco The University of Western and Non-Newtonian Fluids l Dimensions and Units of Viscosity l Viscometer Types l Capillary M. Kostic must be supplied (1) to create viscous flow units by breaking bonds between atoms and molecules, and (2

  4. Bisphenol-A rapidly enhanced passive avoidance memory and phosphorylation of NMDA receptor subunits in hippocampus of young rats

    SciTech Connect (OSTI)

    Xu Xiaohong, E-mail: xuxh63@zjnu.cn; Li Tao; Luo Qingqing; Hong Xing; Xie Lingdan; Tian Dong

    2011-09-01

    Bisphenol-A (BPA), an endocrine disruptor, is found to influence development of brain and behaviors in rodents. The previous study indicated that perinatal exposure to BPA impaired learning-memory and inhibited N-methyl-D-aspartate receptor (NMDAR) subunits expressions in hippocampus during the postnatal development in rats; and in cultured hippocampal neurons, BPA rapidly promotes dynamic changes in dendritic morphology through estrogen receptor-mediated pathway by concomitant phosphorylation of NMDAR subunit NR2B. In the present study, we examined the rapid effect of BPA on passive avoidance memory and NMDAR in the developing hippocampus of Sprague-Dawley rats at the age of postnatal day 18. The results showed that BPA or estradiol benzoate (EB) rapidly extended the latency to step down from the platform 1 h after footshock and increased the phosphorylation levels of NR1, NR2B, and mitogen-activated extracellular signal-regulated kinase (ERK) in hippocampus within 1 h. While 24 h after BPA or EB treatment, the improved memory and the increased phosphorylation levels of NR1, NR2B, ERK disappeared. Furthermore, pre-treatment with an estrogen receptors (ERs) antagonist, ICI182,780, or an ERK-activating kinase inhibitor, U0126, significantly attenuated EB- or BPA-induced phosphorylations of NR1, NR2B, and ERK within 1 h. These data suggest that BPA rapidly enhanced short-term passive avoidance memory in the developing rats. A non-genomic effect via ERs may mediate the modulation of the phosphorylation of NMDAR subunits NR1 and NR2B through ERK signaling pathway. - Highlights: > BPA rapidly extended the latency to step down from platform 1 h after footshock. > BPA rapidly increased pNR1, pNR2B, and pERK in hippocampus within 1 h. > ERs antagonist or MEK inhibitor attenuated BPA-induced pNR1, pNR2B, and pERK.

  5. Effects of Ge replacement in GeTe by [Ag+Sb] on thermoelectric...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in GeTe by Ag+Sb on thermoelectric properties and NMR spectra Requirements for student: general physics and chemistry courses, and desire to work in experimental laboratory. This...

  6. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    SciTech Connect (OSTI)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel, E-mail: daniel.chrastina@polimi.it; Mondiali, Valeria; Isella, Giovanni [L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy); Bollani, Monica [IFN-CNR, L-NESS, via Anzani 42, 22100 Como (Italy)

    2014-09-21

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

  7. GE partners with 'Girls Who Code' for summer program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    offered 19 programs and counted 375 participants; this year, Girls Who Code will offer 60 programs reaching close to 1,200 girls in nine cities nationwide. GE joins other...

  8. Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis...

  9. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Innovation and Manufacturing in Europe 2-4-13-v-3d-printing-medical-devices Additive Manufacturing Demonstration at GE Global Research 2-3-10-v Crowdsourcing...

  10. What Happens in Research-Based Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    paths we have at GE Global Research ("GE Leaders are Researchers Too",). The field of gas turbine heat transfer is growing in importance, and as a result, we have a lot of job...

  11. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD (United Kingdom); Dobbie, A.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7A (United Kingdom)

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1?x}Ge{sub x} alloys for germanium concentrations x???0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28?Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ?2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x?=?1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  12. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore »dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  13. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    SciTech Connect (OSTI)

    Cecchi, S., E-mail: stefano.cecchi@mdm.imm.cnr.it; Chrastina, D.; Frigerio, J.; Isella, G. [L-NESS, Dipartimento di Fisica, Politecnico di Milano–Polo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy); Gatti, E.; Guzzi, M. [L-NESS, Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 53, I-20126 Milano (Italy); Müller Gubler, E. [Electron Microscopy ETH Zurich, ETH Zurich, Auguste-Piccard-Hof 1, CH-8093 Zurich (Switzerland); Paul, D. J. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-03-07

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1??m thick Si{sub 1?x}Ge{sub x} buffers (with x?>?0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475?°C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si{sub 1?x}Ge{sub x} layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach.

  14. Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*

    E-Print Network [OSTI]

    Bowers, John

    Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

  15. MOTION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2011-01-01

    MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.OF ELECTRON-HOLE DROPS IN Ge R M Westervelt, J C Culbertson

  16. Conduction band discontinuity and electron confinement at the Si[subscript x]Ge[subscript 1?x]/Ge interface

    E-Print Network [OSTI]

    Mazzeo, G.

    Germanium rich heterostructures can constitute a valid alternative to Silicon for the confinement of single electron spins. The conduction band discontinuity in SiGe/Ge heterostructures grown on pure germanium substrate ...

  17. Properties of excited states in {sup 77}Ge.

    SciTech Connect (OSTI)

    Kay, B. P.; Chiara, C. J.; Schiffer, J. P.; Kondev, F. G.; Zhu, S.; Carpenter, M. P.; Janssens, R. V. F.; Lauritsen, T.; Lister, C. J.; McCutchan, E. A.; Seweryniak, D.; Stefanescu, I.; Univ. of Maryland; Horia-Hulubei National Inst. for Physics and Nuclear Engineering

    2009-07-01

    The nucleus {sup 77}Ge was studied through the {sup 76}Ge({sup 13}C,{sup 12}C){sup 77}Ge reaction at a sub-Coulomb energy. The angular distributions of rays depopulating excited states in {sup 77}Ge were measured in order to constrain spin and parity assignments. Some of these assignments are of use in connection with neutrinoless double beta decay, where the population of states near the Fermi surface of {sup 76}Ge was recently explored using transfer reactions.

  18. Particle Production at 3 GeV X. Ding, UCLA

    E-Print Network [OSTI]

    McDonald, Kirk

    = 50m 0.02976 (neg: 0.01206, pos: 0.01770) Carbon 3 GeV, Z = 0m 0.03341 (neg: 0.01370, pos: 0.01971) Mercury 3 GeV, Z = 50 m 0.02096 (neg: 0.01070, pos: 0.01026) Mercury 3 GeV, Z = 0 m 0.02496 (neg: 0.01273, pos: 0.01223) Mercury 8 GeV, Z = 50 m 0.0263 (neg: 0.0136, pos: 0.0127) Mercury 8 GeV, Z = 0m 0

  19. Role of nucleation sites on the formation of nanoporous Ge

    SciTech Connect (OSTI)

    Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2012-09-24

    The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

  20. Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b , Sarah R passivation of Ge(100) surface via formation of Ge-N and Ge-O surface species was studied using scanning cyclotron resonance (ECR) plasma source formed an ordered Ge-N structure on a Ge(100) surface at 500o C. DFT

  1. Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge

    SciTech Connect (OSTI)

    Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

    2009-01-28

    The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

  2. Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner *Corresponding author: rschaevitz@stanford.edu Abstract: Photocurrent measurements in Ge quantum wells parameters for design of high-performance SiGe/Ge quantum well optoelectronics on silicon. Germanium

  3. Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo bandwidth have been demonstrated [4]. 2. Quantum well design Ge is an indirect band gap material, but it has. In order to have good quantum confinement, SiGe barriers are used since Si and Ge have a very high direct

  4. Interface and nanostructure evolution of cobalt germanides on Ge(001)

    SciTech Connect (OSTI)

    Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

    2014-02-21

    Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

  5. Management problems relative to granting civilian personnel authority to supervisors in the Air Training Command 

    E-Print Network [OSTI]

    Wolf, Kenneth

    1961-01-01

    %ale and suggestions relative to this study. In additions aPpreoiation is extended to Nr, Leroy Mathewsa Civilian Personnel Officer~ Chanute Air Force Base~ HlinoisI Nr. Jack Nard~ Civilian Personnel Officer, Harlingen Air Force Base, Texas; Nx', Granville 0..., Chastain~ Civilian Personnel Officer~ Keesler Air Force Base~ Mississippi~ Mr. J, Naurioe Daniels, Civilian Personnel Ofricer~ Perrin Air Force Base, Texas~ and Nr, Jones B, Rawlings~ Civilian Personnel Officer, "~dolph Air Force Base, Texas...

  6. Colon Cancer Mapping | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D BGene NetworkNuclearDNP 20082 P2014 CollegiateVanderbilt, GE Team

  7. Crowdsourcing Software Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submit theCovalent Bonding in Actinide SandwichCrayCrosscuttingGE, MIT Build

  8. Crowdsourcing Software Award | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submit theCovalent Bonding in Actinide SandwichCrayCrosscuttingGE, MIT

  9. Patent Record Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeeding access| Department ofStephenSkinner,Past and Present EERE Budget PastGE's

  10. Game Changing Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear PhysicsGE GlobalGetting&Tools »GambitI

  11. Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy spectroscopy

    E-Print Network [OSTI]

    Neumark, Daniel M.

    Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy The low-lying states of Ge2 and Ge2 are probed using negative ion zero electron kinetic energy ZEKE spectroscopy. The ZEKE spectrum of Ge2 yields an electron affinity of 2.035 0.001 eV for Ge2, as well as term

  12. Cs6Ge8Zn: A Zintl Phase with Isolated Heteroatomic Clusters of Ge8Zn

    E-Print Network [OSTI]

    a single phase of Cs6Ge8Zn.8 The plate-like crystals of the compound are brittle, black, and with coal-like luster. Single-crystal studies unveiled a new type of cluster formation, a dimer of corner different types. The clusters of type A have only a horizontal mirror plane (Cm) while the clusters of type

  13. Structure and vibrations of different charge Ge impurity in ?-quartz

    SciTech Connect (OSTI)

    Kislov, A. N., E-mail: a.n.kislov@urfu.ru; Mikhailovich, A. P., E-mail: a.n.kislov@urfu.ru; Zatsepin, A. F., E-mail: a.n.kislov@urfu.ru [Ural Federal University, 19 Mira St., Yekaterinburg, 620002 (Russian Federation)

    2014-10-21

    Atomic structure and localized vibrations of ??SiO{sub 2}:Ge are studied using computer modeling techniques. The simulation was carried out by the lattice dynamics calculation of the local density of vibrational states. Local structures parameters are calculated, localized symmetrized vibrations frequency caused by Ge impurity in different charge states are defined. The movements of atoms located near Ge impurity are analyzed and their contribution into localized vibrations of different type is evaluated.

  14. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    SciTech Connect (OSTI)

    Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  15. The Proposed Majorana 76Ge Double-Beta Decay Experiment

    SciTech Connect (OSTI)

    Aalseth, Craig E.; Anderson, Dale N.; Arthur, Richard J.; Avignone, Frank T.; Baktash, Cryus; Ball, Thedore; Barabash, Alexander S.; Bertrand, F.; Brodzinski, Ronald L.; Brudanin, V.; Bugg, William; Champagne, A. E.; Chan, Yuen-Dat; Cianciolo, Thomas V.; Collar, J. I.; Creswick, R. W.; Descovich, M.; Di Marco, Marie; Doe, P. J.; Dunham, Glen C.; Efremenko, Yuri; Egerov, V.; Ejiri, H.; Elliott, Steven R.; Emanuel, A.; Fallon, Paul; Farach, H. A.; Gaitskell, R. J.; Gehman, Victor; Grzywacz, Robert; Hallin, A.; Hazma, R.; Henning, R.; Hime, Andrew; Hossbach, Todd W.; Jordan, David V.; Kazkaz, K.; Kephart, Jeremy; King, G. S.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; Lesko, Kevin; Luke, P.; Luzum, M.; Macchiavelli, A. O.; McDonald, A.; Mei, Dongming; Miley, Harry S.; Mills, G. B.; Mokhtarani, A.; Nomachi, Masaharu; Orrell, John L.; Palms, John M.; Poon, Alan; Radford, D. C.; Reeves, James H.; Robertson, R. G. H.; Runkle, Robert C.; Rykaczewski, Krzysztof P.; Saburov, Konstantin; Sandukovsky, Viatcheslav; Sonnenschein, Andrew; Tornow, W.; Tull, C.; van de Water, R. G.; Vanushin, Igor; Vetter, Kai; Warner, Ray A.; Wilkerson, John F.; Wouters, Jan M.; Young , A. R.; Yumatov, V.

    2005-01-01

    The proposed Majorana experiment is based on an array of segmented intrinsic Ge detectors with a total mass of 500 kg of Ge isotopically enriched to 86% in 76Ge. Background reduction will be accomplished by: material selection, detector segmentation, pulse shape analysis, electro-formation of copper parts, and granularity of detector spacing. The predicted experimental sensitivity for measurement of the neutrinoless double-beta decay mode of 76Ge, over a data acquisition period of 5000 kg•y, is ~ 4?1027 y.

  16. GE funds initiative to support STEM initiatives in Oklahoma ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    investment in Oklahoma reflects GE's commitment to skills development for the future. "Growth and development go hand-in-hand with educational excellence, strength in science,...

  17. CMC technology revolutionary for aviation, power | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in new window) Novel CMC technology revolutionizes aircraft engines, turbines CMCs - Ceramic Matrix Composites - are a revolutionary material invented by GE scientists that offer...

  18. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect (OSTI)

    Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Höche, Thomas; Tünnermann, Andreas; Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  19. Construction progresses at GE's Oil & Gas Technology Center ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Construction progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window)...

  20. RADIATION DAMAGE RESISTANCE OF REVERSE ELECTRODE GE COAXIAL DETECTORS

    E-Print Network [OSTI]

    Pehl, Richard H.

    2011-01-01

    Parker, "Radiation Damage of Germanium Detectors", Bull. Am.to radiation damage between the two detectors was clearlyRADIATION DAMAGE RESISTANCE OF REVERSE ELECTRODE GE COAXIAL DETECTORS

  1. GE China Technology Center Wins Top 12 Most Innovative Practices...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to our local markets and innovating technologies to meet the most urgent needs of Chinese society. Additionally, GE teams up with local customers to jointly develop innovative...

  2. The Wizard of Schenectady: Charles Proteus Steinmetz | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    week the Smithsonian's "Past Imperfect" blog highlighted a man near and dear to the heart of GE Global Research, Charles Proteus Steinmetz. The article paints a really...

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    time analytics is required At GE we keep pace with these trends via the Industrial Internet, a highly connected ecosystem of intelligent machines, advanced analytics and people...

  4. A Sneak Peek Into Santa's Smarter Sleigh | GE Global Research

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    legs a break. - An upgraded sleigh frame made from GE's high temperature Ceramic Matrix Composites (CMCs). The CMCs can withstand the heat of entry and reentry in earth's...

  5. Titan propels GE wind turbine research into new territory | ornl...

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    Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

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    Big Data, Modeling and Simulation, High Performance Computing and the Industrial Internet as key technological enablers of GE's Software initiatives. We enjoyed speakers from...

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    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ready to dive in? Apply for the program. GE Software Leadership Program The rise of the Industrial Internet requires a new breed of talent and organizational capability. New...

  8. Departement Maschinenbau und Verfahrenstechnik

    E-Print Network [OSTI]

    Daraio, Chiara

    Bioengineering von J. Snedecker und S. Panke zu belegen. Wählbare Fächer LE-Nr. Dozent Spra- che ECTS HS ECTS FS

  9. Phytologia (April 2009) 91(1)160 A NEW GENUS, HESPEROCYPARIS, FOR THE CYPRESSES

    E-Print Network [OSTI]

    Adams, Robert P.

    , Xanthocyparis, Juniperus, nrDNA(ITS), 4-coumarate: CoA Ligase, Abscisic acid-insensitive 3, petN, psb

  10. Phytologia (August 2010) 92(2)156 TAXONOMY OF JUNIPERUS OXYCEDRUS

    E-Print Network [OSTI]

    Adams, Robert P.

    TERPENOIDS AND SNPS FROM nrDNA AND petN Robert P. Adams Biology Department, Baylor University, Box 727 Gruver

  11. 185Phytologia (August 2011) 93(2) TAXONOMY AND EVOLUTION OF JUNIPERUS COMMUNIS

    E-Print Network [OSTI]

    Adams, Robert P.

    , geographic variation, nrDNA, petN, trnDT, trnSG, SNPs, Pleistocene migrations. #12;Phytologia (August 2011

  12. Towards Energy and Resource Efficient Manufacturing: A Processes and Systems Approach

    E-Print Network [OSTI]

    2012-01-01

    Overview and Methodology, Ecoinvent Report No. 1, SwissCompressed Air Supply, Ecoinvent report nr. 23, Swiss Centreexisting LCI databases The Ecoinvent database, as supplied

  13. GPO MA KuWi Gemeinsame Prfungsordnung fr den Master of Arts (M.A.) Kultur und Wirtschaft

    E-Print Network [OSTI]

    Mannheim, Universität

    (LHG) hat der Senat der Universität Mann- heim gemäß § 19 Abs. 1 Satz 2 Nr. 9 LHG am 27. Februar 2013

  14. NREL: News - NREL Reports Examine Economic Trade-offs of Owning...

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    NR-0415 NREL Reports Examine Economic Trade-offs of Owning versus Leasing a Solar Photovoltaic System January 21, 2015 Two new reports from the Energy Department's National...

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    Printable Version News Release NR-1615 NREL Releases Report Describing Guidelines for PV Manufacturer Quality Assurance International task force aims to toughen standards,...

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    Newsroom Bookmark and Share Printable Version News Release NR-2115 NREL Supports China PV Investment and Financing Alliance to Open Capital for Solar Deployment May 14, 2015 The...

  17. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    mariapoienar@yahoo.com ; National Institute for Research and Development in Electrochemistry and Condensed Matter, Plautius Andronescu Str Nr 1, 300224 Timisoara ; Hardy,...

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    Printable Version News Release NR-1215 NREL Tool Finds Effective Behind-the-Meter Energy Storage Configurations Small battery systems can offer attractive return on investment...

  19. 0RGHOEDVHG ULVN DVVHVVPHQW WKH &25$6 DSSURDFK .HWLO 6WOHQ1

    E-Print Network [OSTI]

    Stølen, Ketil

    commercial companies: Intracom (Greece), Solinet (Germany) and Telenor (Norway); seven research institutes: CTI (Greece), FORTH (Greece), IFE (Norway), NCT (Norway), NR (Norway), RAL (UK) and Sintef (Norway

  20. COMPLEX MODIFIED K-DV EQUATION AND NONLINEAR PROPAGATION OF LOWER HYBRID WAVES

    E-Print Network [OSTI]

    Karney, Charles

    .F.F. Karney, + A. Bers, and N.R. Pereira t Plasma Research Report PRR 781'6 February 1978 To appear i n

  1. NREL: News - NREL Staff Recognized for Top Innovations as Lab...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Release NR-2015 NREL Staff Recognized for Top Innovations as Lab Celebrates Record Patent Year DOE EERE Assistant Secretary David Danielson highlights "innovation culture" of...

  2. DOI: 10.1126/science.1150369 , 893 (2008);320Science

    E-Print Network [OSTI]

    Prospero, Joseph M.

    2008-01-01

    discharges from wastewater treatment, atmospheric deposition, and so forth, resulting in ), including oxidized and reduced inorganic and organic forms. The availability of Nr limits primary pro

  3. Impacts of Atmospheric Anthropogenic Nitrogen on the

    E-Print Network [OSTI]

    Ward, Bess

    discharges from wastewater treatment, atmospheric deposition, and so forth, resulting in increasing), including oxidized and reduced inorganic and organic forms. The availability of Nr limits primary pro

  4. NREL: News - INL and NREL Demonstrate Power Grid Simulation at...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bookmark and Share Printable Version News Release NR-1915 INL and NREL Demonstrate Power Grid Simulation at a Distance Capability makes national laboratory assets accessible...

  5. MEETING OVERVIEW

    Office of Environmental Management (EM)

    the Office of Environmental Management (EM); the Office of Civilian Radioactive Waste Management; the Office of Naval Reactors (NR); the Waste Isolation Pilot Project...

  6. Careers & the disABLED Career Expo

    Broader source: Energy.gov [DOE]

    Location: Ronald Reagan Bldg, Washington, DCAttendees:  Terri Sosa (Science)POC:  Donna FriendWebsite: http://bit.ly/1tlHhNr

  7. The genome and cytoskeleton of Naegleria gruberi, an amoeboflagellate

    E-Print Network [OSTI]

    Fritz-Laylin, Lillian Kathleen

    2010-01-01

    Mol Biol Cell 14, 2999-3012. Peel, N. , Stevens, N.R. ,Mol Biol Cell 14, 2999-3012. Omran, H. , Kobayashi, D. ,

  8. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  9. Shell model description of Ge isotopes

    E-Print Network [OSTI]

    J. G. Hirsch; P. C. Srivastava

    2012-04-12

    A shell model study of the low energy region of the spectra in Ge isotopes for $38\\leq N\\leq 50$ is presented, analyzing the excitation energies, quadrupole moments, $B(E2)$ values and occupation numbers. The theoretical results have been compared with the available experimental data. The shell model calculations have been performed employing three different effective interactions and valence spaces.We have used two effective shell model interactions, JUN45 and jj44b, for the valence space $f_{5/2} \\, p \\,g_{9/2}$ without truncation. To include the proton subshell $f_{7/2}$ in valence space we have employed the $fpg$ effective interaction due to Sorlin {\\it et al.}, with $^{48}$Ca as a core and a truncation in the number of excited particles.

  10. 3 GeV Injector Design Handbook

    SciTech Connect (OSTI)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  11. Nucleon Resonances Near 2 GeV

    E-Print Network [OSTI]

    He, Jun

    2015-01-01

    The nucleon resonances near 2 GeV are investigated through the $\\Sigma$(1385) and $\\Lambda(1520)$ photoproductions within a Regge-plus-resonance approach based on the new experimental data released by the CLAS Collaboration. The $\\Delta(2000)$ and the $N(2120)$ are found essential to reproduce the experimental data and should be assigned as second $[\\Delta 5/2^+]$ and third $[N3/2^-]$ in the constituent quark model, respectively. A calculation of the binding energy and decay pattern supports that the $N(1875)$, which is listed in the PDG as the third $N3/2^-$ nucleon resonance instead of the $N(2120)$, is from the $\\Sigma(1385)K$ interaction rather than a three quark state.

  12. Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 Si0.75Ge0.25 using various H2 pressures

    E-Print Network [OSTI]

    Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 ÕSi0.75Ge0.25 using various H2 pressures Gianni Taraschi,a) Sajan Saini, Wendy W. Fan, Lionel C Ge in SiO2 was synthesized by the reduction of Si0.75Ge0.25O2 with H2 , at various annealing

  13. Band-engineered Ge-on-Si lasers

    E-Print Network [OSTI]

    Liu, Jifeng

    We report optically-pumped Ge-on-Si lasers with direct gap emission near 1600 nm at room temperature. The Ge-on-Si material was band-engineered by tensile strain and n-type doping to compensate the energy difference between ...

  14. Ge#ng Started on HokieSpeed

    E-Print Network [OSTI]

    Crawford, T. Daniel

    Ge#ng Started on HokieSpeed Advanced Research Computing #12;Advanced Research Compu:ng;Advanced Research Compu:ng Important Login Informa:on · Account sheets provide login Compu:ng Ge#ng Started Steps 1. Sheet distributed provides your training account

  15. Excess carrier lifetimes in Ge layers on Si

    SciTech Connect (OSTI)

    Geiger, R., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch; Sigg, H., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Frigerio, J.; Chrastina, D.; Isella, G. [L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Süess, M. J. [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Scientific Center for Optical and Electron Microscopy (SCOPEM), ETH Zurich, 8093 Zurich (Switzerland); Spolenak, R. [Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Faist, J. [Institute for Quantum Electronics, ETH Zurich, 8093 Zurich (Switzerland)

    2014-02-10

    The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6?ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3?ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.

  16. The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin, S. Cecchi, J. Frigerio, T. Etzelstorfer et al.

    E-Print Network [OSTI]

    Hague, Jim

    The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli,1 L. Ferre Llin,1 S. Cecchi,2 J June 2013) The thermoelectric and physical properties of superlattices consisting of modulation doped

  17. On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

    SciTech Connect (OSTI)

    Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)] [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

    2013-09-14

    Structural models of growing Ge hut clusters—pyramids and wedges—are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

  18. Ratio of jet cross sections at root s=630 GeV and 1800 GeV

    E-Print Network [OSTI]

    Baringer, Philip S.; Bean, Alice; Coppage, Don; Hebert, C.

    2001-03-01

    The DO Collaboration has measured the inclusive jet cross section in (p) over barp collisions at roots = 630 GeV. The results for pseudorapidities \\ eta \\ < 0.5 are combined with our previous results at roots = 1800 GeV ...

  19. Ion Implanted Ge:B Far Infrard Blocked Impurity Band Detectors

    E-Print Network [OSTI]

    Beeman, J.W.; Goyal, S.; Reichertz, L.A.; Haller, E.E.

    2008-01-01

    +16 1.E+15 1.E+14 Depth into Ge Crystal Surface (Å) Figure 5devices does not match that of Ge:Ga photoconductors, whichimplants or stacking devices) Ge IBIB detectors will reach

  20. ALFVEN-WAVE OSCILLATIONS IN A SPHERE, WITH APPLICATIONS TO ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Markiewicz, R.S.

    2011-01-01

    Rev. B 13,4626 (1976). For Ge(4:2) m is the average of thediscussed for EHD in unstressed Ge (B II )TO ELECI'RON-OOLE DROPS IN Ge R. S. Markiewicz January 1978

  1. NUCLEATION PHENOMENA IN THE FORMATION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2010-01-01

    lO cjl(K) Symbol erg cm ) Ge - 0.064 T2 Ref. x x Si Ref. T2constructed the ultra-sensitive Ge photodetector which wasand method of mounting. The Ge sample is electrically and

  2. Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy

    E-Print Network [OSTI]

    2008-01-01

    Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byBerkeley, CA, 94720 ABSTRACT Ge nanocrystals are formed inthe Raman spectra of the Ge nanocrystals in-situ. The

  3. Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)

    E-Print Network [OSTI]

    Guchhait, S.

    2011-01-01

    segregation in Mn-doped Ge”, Journal of Applied Physics 101,Room-temperature ferromagnetism in Ge 1-x Mn x nanowires”,BC high-?/metal gate Ge/C alloy pMOSFETs fabricated directly

  4. Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals

    SciTech Connect (OSTI)

    Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

    2013-12-04

    The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.

  5. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    SciTech Connect (OSTI)

    Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

    2014-10-06

    Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450?°C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

  6. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    SciTech Connect (OSTI)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs.

  7. Ion beam synthesis of SiGe alloy layers

    SciTech Connect (OSTI)

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2{times}10{sup 16}cm{sup {minus}2}, 3{times}10{sup 16}cm{sup {minus}2} (mid), and 5{times}10{sup 16}cm{sup {minus}2} (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3{times}l0{sup 16}cm{sup {minus}2}cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  8. Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen* and D. K. Saldin

    E-Print Network [OSTI]

    Saldin, Dilano

    Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen quantitatively the geometry of mixed Ge-Si dimers on a single domain Si 001 2 1 surface by azimuthal scanning core-level photoelectron diffraction. By analyzing Ge 3d diffraction patterns from Ge/Si 001 at 0.1 ML

  9. GeV Emission from Collisional Magnetized Gamma Ray Bursts

    E-Print Network [OSTI]

    P. Mészáros; M. J. Rees

    2011-04-26

    Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

  10. GE Store for Technology is Open for Business | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear Physics (NP)aboutRio deCooperation atThe GE

  11. Greatly improved interfacial passivation of in-situ high ? dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

    SciTech Connect (OSTI)

    Chu, R. L. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Liu, Y. C.; Lee, W. C.; Huang, M. L.; Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

    2014-05-19

    A high-quality high-?/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high ? dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angle-resolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5?Å to 1?Å with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high ? dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (D{sub it}) reveal the improved high-?/Ge interface using the Ge epi-layer approach.

  12. Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures

    SciTech Connect (OSTI)

    Zhang, Rui [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan) [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)] [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2013-02-25

    The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

  13. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect (OSTI)

    Prestat, E., E-mail: eric.prestat@gmail.com; Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A., E-mail: andre.barski@cea.com [INAC, SP2M, CEA and Université Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)

    2014-03-10

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  14. Direct band gap narrowing in highly doped Ge

    E-Print Network [OSTI]

    Han, Zhaohong

    Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration ...

  15. Growth strategies to control tapering in Ge nanowires

    SciTech Connect (OSTI)

    Periwal, P.; Baron, T., E-mail: thierry.baron@cea.fr; Salem, B.; Bassani, F. [Laboratoire des Technologies de la Microelectronique (LTM), UMR 5129 CNRS-UJF, CEA Grenoble, 17 Rue des Martyrs, 38054 Grenoble (France); Gentile, P. [SiNaPs Laboratory SP2M, UMR-E, CEA/UJF-Grenoble 1, INAC, 38054 Grenoble (France)

    2014-04-01

    We report the effect of PH{sub 3} on the morphology of Au catalyzed Ge nanowires (NWs). Ge NWs were grown on Si (111) substrate at 400?°C in the presence of PH{sub 3}, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH{sub 3}/GeH{sub 4} ratio causes passivation at NW surface. At high PH{sub 3} concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH{sub 3} flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH{sub 3}-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth.

  16. Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

    E-Print Network [OSTI]

    Kan, Eric Win Hong

    Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) ...

  17. Discovery of Isotopes of Elements with Z $\\ge$ 100

    E-Print Network [OSTI]

    M. Thoennessen

    2012-03-09

    Currently, 163 isotopes of elements with Z $\\ge$ 100 have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  18. Ge-on-Si laser operating at room temperature

    E-Print Network [OSTI]

    Liu, Jifeng

    Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

  19. GE launches 'STEM empowers OK' initiative in Oklahoma City |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new...

  20. "Big Picture" Process Modeling Tools |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Using process modeling tools to attain cost-effective results for GE customers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click...

  1. ORNL Partners with GE on New Hybrid | ornl.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    electric storage water heater, positioning GE to be the first company to meet the energy-saving standard. According to DOE, using devices that meet these criteria should save...

  2. Kids Invention: Vision of the Future |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Bring your Child to Work Day, to student mentoring, teaching in the class room, Invention Convention and Science Day. To take the message nationally, GE teamed up with the...

  3. The Need for Biological Computation System Models | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2012.10.09 Hello everyone, I'm Maria Zavodszky and I work in the Computational Biology and Biostatistics Lab at GE Global Research in Niskayuna, New York. This being our...

  4. Demonstration of 2nd Generation Ducted GE "Brillion" Hybrid Water

    E-Print Network [OSTI]

    sharing partners. #12;Project Synopsis Evaluate the performance and demand response (DR) of the Gen II GE/frequency response) in the PNW and nationwide (Lu et al, 2011; Diao et al 2012) The demand response characteristics

  5. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; Kalinin, Sergei V; Lai, Keji; Demkov, Alexander A.

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  6. Technology makes reds "pop" in LED displays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reveal and Energy Smart consumer brands, and Evolve(tm), GTx(tm), Immersion(tm), Infusion(tm), Lumination(tm), Albeo(tm) and Tetra commercial brands, all trademarks of GE....

  7. Members of a workshop at the tenth IAYC Conference, July 7, 2006 1. ge -hak -te le -ber, ge -fil -te -fish: sha-bes iz a far -ge -ni -gn

    E-Print Network [OSTI]

    Finkel, Raphael

    A SUDE Members of a workshop at the tenth IAYC Conference, July 7, 2006 = 90 4 4 1. ge - hak - te le - ber, ge - fil - te - fish: sha- bes iz a far - ge - ni - gn 2. kha - le gri - vn, ku - gl yoykh: ku - men on di ma - khe - to - nem. 3. shtru - dl, tsi - mes, zi - se kalte: a su - de vos men vet ge

  8. GE & AE Extension Request Form, Version 7, Feb 2013, JC Program Change

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 7, Feb 2013, JC Program Change Pathway Today's Date to General English. How many sessions of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take? 21 hours 27 hours OR ____ I am a Pathway student, and I would like

  9. CTu2J.1.pdf CLEO Technical Digest OSA 2012 Light Emission in Ge Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.1.pdf CLEO Technical Digest © OSA 2012 Light Emission in Ge Quantum Wells Edward T. Fei1 Engineering, Stanford University, Stanford, CA 94305, USA edfei@stanford.edu Abstract: We present the Ge/SiGe and electroluminescence show enhanced optical properties over bulk Ge. Further optical enhancement is observed in disk

  10. College of Engineering Partner Schools Australia Melbourne University, Melbourne GE3*

    E-Print Network [OSTI]

    Lee, Tonghun

    College of Engineering Partner Schools Australia Melbourne University, Melbourne ­ GE3* University of New South Wales, New South Wales ­ GE3* Austria Technical University of Vienna, Vienna - GE3* Chile Universidad del Bio Bio, Concepcion China Xiamen University, Xiamen ­ GE3* Denmark Aalborg University, Aalborg

  11. On the Comparison of Fisher Information of the Weibull and GE Distributions

    E-Print Network [OSTI]

    Kundu, Debasis

    On the Comparison of Fisher Information of the Weibull and GE Distributions Rameshwar D. Gupta exponen- tial (GE) and Weibull distributions for complete and Type-I censored observations. Fisher is much more than the GE distribution. We compute the total information of the Weibull and GE

  12. GE Hosts Visit by DOE to Kick Off High-Efficiency GeneratorDevelopment Program

    E-Print Network [OSTI]

    history of working with the DOE on critical energy programs. Jon Ebacher, Vice President of GE PowerGE Hosts Visit by DOE to Kick Off High-Efficiency GeneratorDevelopment Program Technology Expected of Energy (DOE) recently met with representatives of GE Power Systems and the GE Global Research Center

  13. Orange-green emission from porous Si coated with Ge films: The role of Ge-related defects

    E-Print Network [OSTI]

    Chen, Haydn H.

    Orange-green emission from porous Si coated with Ge films: The role of Ge-related defects X. L. Wua. A new orange-green PL band, centered at 2.25 eV, was observed with full-width at half-maximum of 0.1 e coated, the new PL band remains unchanged in peak energy but drops abruptly in intensity. Spectral

  14. Strain-induced self-assembly of Ge nanodashes, nanodumbbells, and dot chains on Si(001)

    SciTech Connect (OSTI)

    Zhang, J. J. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Center for Advancing Electronics Dresden, TU Dresden (Germany)

    2013-09-30

    We investigate the growth of self-assembled Ge nanostructures on top of embedded Ge nanowires on Si(001) substrates. Ge nanostructures, such as nanodashes, nanodumbbells, and dot chains are observed simply by tuning the growth temperature and thickness of the Si spacer between the Ge layers. The self-assembly process is governed by the surface strain fields generated by the embedded Ge nanowires and is well-described by our theoretical calculations. The catalyst-free and horizontal growth of such Ge nanostructures directly on Si(001) is attractive for investigating exotic transport properties through Si/Ge-based quantum devices.

  15. DISTINCT PATTERNS OF NITRATE REDUCTASE ACTIVITY IN BROWN ALGAE: LIGHT AND AMMONIUM SENSITIVITY IN LAMINARIA DIGITATA IS ABSENT IN

    E-Print Network [OSTI]

    Berges, John A.

    DISTINCT PATTERNS OF NITRATE REDUCTASE ACTIVITY IN BROWN ALGAE: LIGHT AND AMMONIUM SENSITIVITY and lowest in summer. This is the first report of NR activity in any alga that is not strongly regulated the regulation of NR by light that has been observed in other algae and higher plants. Key index words: ammonium

  16. proteinsSTRUCTURE O FUNCTION O BIOINFORMATICS Distinguishing two groups of flavin

    E-Print Network [OSTI]

    Ullmann, G. Matthias

    ), nitric oxide syn- thase (NOS), and the cytoplasmic novel reductase 1 (NR1).6 CPR, the most extensively-NADP(H)-reductase; MC, Monte Carlo; MSR, methionine synthase reductase; NOS, nitric oxide synthase; NR1, cytoplasmic-containing reductases are involved in a wide variety of physiological reactions such as photosynthesis, nitric oxide

  17. Implicit Measurement of Extraversion and Agreeableness Using Conditional Reasoning Tests: The Impact of Faking 

    E-Print Network [OSTI]

    Rasmussen, Jennifer

    2015-08-07

    ................................................................................................. 58 5. Example Conditional Reasoning Item for Agreeableness .................................... 66 6. Sample Size by Condition .................................................................................... 73 7. CRT_FG_NR: Illogical Responses... Chosen by Participants ................................ 87 8. CRT_FG_R: Illogical Responses Chosen by Participants ................................... 88 9. CRT_H_NR: Illogical Responses Chosen by Participants................................... 89 10...

  18. 1 Rectangular Bunched Rutile TiO2 Nanorod Arrays Grown on Carbon 2 Fiber for Dye-Sensitized Solar Cells

    E-Print Network [OSTI]

    Wang, Zhong L.

    a study of rectangular bunched 13 TiO2 nanorod (NR) arrays grown on carbon fibers (CFs) 14 from titanium are fabricated by using etched TiO2 18 NR-coated CFs as the photoanode. An absolute energy 19 conversion (CFs). Relative to the traditional photoanode, CFs are 47 flexible, conductive, and stable in liquid

  19. Response to Xanthomonas campestris pv. vesicatoria in Tomato Involves Regulation of Ethylene Receptor

    E-Print Network [OSTI]

    Klee, Harry J.

    Response to Xanthomonas campestris pv. vesicatoria in Tomato Involves Regulation of Ethylene ethylene's role in plant response to virulent and avirulent strains of Xanthomonas campestris pv overexpressing a wild-type NR cDNA were infected with virulent X. campestris pv. vesicatoria. Like the Nr mutant

  20. Fast Power Flow Methods 1.0 Introduction

    E-Print Network [OSTI]

    McCalley, James D.

    1 Fast Power Flow Methods 1.0 Introduction What we have learned so far is the so-called "full that with a NR. But NR is slow! Often, the problem is not so "tough," and in that case, the so-called fast is fast and robust, it is not very accurate. Solving the power flow equations can be computationally

  1. GRADUATE CATALOG Published by

    E-Print Network [OSTI]

    Meyers, Steven D.

    Tourism 12/5/11 NR Nursing (DNP) AdultGerontology Primary care, AdultGerontology/Occupational Health, Family Health, Oncology/AdultGerontology Primary Care (Dual), Pediatric Health 3/4/13 NR Nursing (MS) AdultGerontology Primary Care/Oncology NP 3/4/13 PH Public Health (MPH) Health

  2. Provided for non-commercial research and education use. Not for reproduction, distribution or commercial use.

    E-Print Network [OSTI]

    Elliott, Emily M.

    and the natural biosphere. The ability of humans to create reactive nitrogen (i.e. by fixing nitrogen gas, N2 releases nitrogen oxides (NOx) into the atmosphere, where it contributes to poor air quality and affects natural sources of Nr. Isotopes are particularly powerful in this regard; Nr sources that carry different

  3. Phytologia (April 2010) 92(1)44 SPECIATION OF JUNIPERUS CEDRUS AND J. MADERENSIS

    E-Print Network [OSTI]

    Adams, Robert P.

    Laguna, Tenerife, Canary Islands, Spain ABSTRACT Analyses of nrDNA and petN-PsbM sequence data, combined of the Canary Islands as it is from J. oxycedrus. These data support the recognition of the Madeira juniper, Cupressaceae, Madeira Island, Canary Islands, nrDNA, cp petN-psbM, taxonomy. In a previous paper of this issue

  4. TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process

    E-Print Network [OSTI]

    Chew, Han Guan

    Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO?) system have been studied based on the Ge content of co-sputtered Ge-SiO? films using transmission electron microscopy (TEM) and X-ray ...

  5. The effect of adding axial freedom to the blades of a two bladed helicopter rotor 

    E-Print Network [OSTI]

    Oradat, Frank Robert

    1953-01-01

    &&ring of the hei art- ment of Ilecnariical Err& neerin:. Nr. E. E. Brush, Nr. P. E. Weick, Nr. R. B. Hulet, Mr. B. B. Ha&sr&sr, i~u-. Te&i Neiller, arid iMr. G. A. Ii?tn oi' tris I egart- ment of Aer&n?utical EnHineerinS. Nr. W. D. Scoates and Nr. W, P. Meads...? the dray nin=e, vith tne fl, &g g in!- ri n. "e on tne nla?e; tnus tne efi'ect of fl q pine. on pitch voulc! be eli, ~in?ted. Insteaa of 'isin, a I ericil on inie ?ynanic vibrats on indic&itor, the ?sf le t3 orr sr&oui? be f. . d to tire y lates oi' iri...

  6. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  7. Effect of mixed Ge/Si cross-linking on the physical properties of amorphous Ge-Si-Te networks

    SciTech Connect (OSTI)

    Gunasekera, K.; Boolchand, P. [School of Electronics and Computing Systems, College of Engineering and Applied Science, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States); Micoulaut, M., E-mail: mmi@lptl.jussieu.fr [Laboratoire de Physique Théorique de la Matière Condensée, Université Pierre et Marie Curie, 4 Place Jussieu, F-75252 Paris Cedex 05 (France)

    2014-04-28

    Amorphous Ge{sub x}Si{sub x}Te{sub 1?2x} glasses are studied as a function of composition by a combination of experimental and theoretical methods, allowing for a full description of the network structure in relationship with physico-chemical properties. Calorimetric and thermal measurements reveal that such glasses display an anomalous behavior across a range of compositions x{sub c1}=7.5% and Ge, Si) are increased. The structural manifestation of these anomalies is understood from ?{sup 119}Sn Mössbauer spectroscopy and First Principles Molecular Dynamics at selected compositions (Ge{sub 20}Te{sub 80}, Si{sub 20}Te{sub 80}, and Ge{sub 10}Si{sub 10}Te{sub 80}). The numerical models reveal the quite different roles played by the modifier or network cross-linker Ge or Si atoms, Si being more tetrahedral in sp{sup 3} geometry, whereas Mössbauer spectroscopy shows that the nature of chemical bonding is dramatically changed around x??8%. The precise evolution of the local structure and chemical bonding ultimately allows understanding the origin of the intermediate phase in these complex tellurides.

  8. C incorporation in epitaxial Ge1yCy layers grown on Ge,,001...: An ab initio study D. Gall, J. D'Arcy-Gall, and J. E. Greene

    E-Print Network [OSTI]

    Gall, Daniel

    C incorporation in epitaxial Ge1ÀyCy layers grown on Ge,,001...: An ab initio study D. Gall, J. D lattice site configurations in fully coherent Ge1 yCy layers grown on Ge 001 . Calculations using strained configuration involving only one C atom per configura- tion. The bond-centered interstitial and the Ge-C split

  9. Field-induced quantum criticality in YbAgGe

    SciTech Connect (OSTI)

    Bud'ko, S.; Canfield, P.

    2008-01-01

    YbAgGe is one of the very few stoichiometric, Yb-based, heavy fermion materials that exhibit field-induced quantum criticality. We will present an overview of thermodynamic and transport measurements in YbAgGe single crystals. Moderate magnetic field (45-90 kOe, depending on orientation) suppresses long range magnetic order, giving rise to non-Fermi-liquid behavior followed at higher field by a crossover to a heavy Fermi-liquid. Given the more accessible temperature and field scales, a non-Fermi liquid region rather than point for T {yields} 0 K may be detected.

  10. Direct band gap optical emission from Ge islands grown on relaxed Si{sub 0.5}Ge{sub 0.5}/Si (100) substrate

    SciTech Connect (OSTI)

    Aluguri, R.; Manna, S.; Ray, S. K., E-mail: physkr@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2014-01-07

    Strained Ge islands have been grown on fully relaxed Si{sub 0.5}Ge{sub 0.5} substrate by pulsed laser ablation technique. The formation of strained Ge islands has been found for film with higher thickness following Stranski–Krastanov growth mechanism. The variation of strain with changing Ge layer thickness has been analyzed using Raman spectroscopy and high-resolution X-ray diffraction techniques. X-ray photoelectron spectra have shown the absence of any Si-Ge intermixing and oxidation of Ge films. A strong no-phonon photoluminescence emission from Ge islands has been observed, showing the superior optical characteristics of the islands grown on relaxed substrate.

  11. Giant Piezoelectricity in Monolayer Group IV Monochalcogenides: SnSe, SnS, GeSe and GeS

    E-Print Network [OSTI]

    Fei, Ruixiang; Li, Ju; Yang, Li

    2015-01-01

    We predict enormous piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their characteristic piezoelectric coefficients are about two orders of magnitude larger than those of other 2D materials, such as MoS2 and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique "puckered" D2h symmetry and weaker chemical bonds of monolayer group IV monochalcogenides. Given the achieved experimental advances in fabrication of monolayers, their flexible character and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications, such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

  12. INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS

    E-Print Network [OSTI]

    INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS SRIKANTH B and Engineering, University of California, Los Angeles, CA 90095. ABSTRACT Relaxed graded Si-Ge/Si layers can of these applications requires a different final Ge concentration in the graded Si-Ge layer. With increasing Ge content

  13. GE & AE Extension Request Form, Version 11, Feb 2013, JC Program Change General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 11, Feb 2013, JC Program Change ­ General English of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take ______________________________________________ Date _________________ #12;GE & AE Extension Request Form, Version 11, Feb 2013, JC Please submit

  14. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    SciTech Connect (OSTI)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J. [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Wang, Y. Q., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Ross, G. G.; Barba, D., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [INRS-Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes Québec J3X 1S2 (Canada)

    2014-05-28

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150?°C for 1?h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301?kJ·mol{sup ?1}) are greater than that of Ge-Ge bonds (264?kJ·mol{sup ?1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  15. Tropical cyclone energy dispersion under vertical shears Xuyang Ge,1

    E-Print Network [OSTI]

    Li, Tim

    Tropical cyclone energy dispersion under vertical shears Xuyang Ge,1 Tim Li,1,2 and Xiaqiong Zhou1] Tropical cyclone Rossby wave energy dispersion under easterly and westerly vertical shears is investigated, and X. Zhou (2007), Tropical cyclone energy dispersion under vertical shears, Geophys. Res. Lett., 34, L

  16. The JLAB 12 GeV Energy Upgrade of CEBAF

    SciTech Connect (OSTI)

    Harwood, Leigh H.

    2013-12-01

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, procurement, installation and commissioning of the magnet and SRF components of the upgrade.

  17. Demand Response Performance of GE Hybrid Heat Pump Water Heater

    SciTech Connect (OSTI)

    Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.

    2013-07-01

    This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation “Brillion”-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in “Standard” electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in “Heat Pump” mode to provide the comparison to heat pump-only demand response. It is expected that “Hybrid” DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.

  18. 7-GeV Advanced Photon Source Conceptual Design Report

    SciTech Connect (OSTI)

    Not Available

    1987-04-01

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

  19. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States); Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menéndez, J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Aoki, Toshihiro [LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704 (United States)

    2014-10-07

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1–y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1–y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1–y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1–y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1–y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1–y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1–x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.

  20. Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

    SciTech Connect (OSTI)

    Guo, Yijun [Ames Laboratory; Rowland, Clare E [Argonne National Laboratory; Schaller, Richard D [Argonne National Laboratory; Vela, Javier [Ames Laboratory

    2014-08-26

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  1. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.

    SciTech Connect (OSTI)

    Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

    2012-03-01

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

  2. Large inherent optical gain from the direct gap transition of Ge thin films

    E-Print Network [OSTI]

    Wang, Xiaoxin

    The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...

  3. GeV electron beams from cm-scale channel guided laser wakefield accelerator

    E-Print Network [OSTI]

    2008-01-01

    GeV electron beams from cm-scale channel guided laser wake?the generation of GeV-class electron beams using an intenseranges and high-quality electron beams with energy up to 1

  4. GeV electron beams from a centimeter-scale laser-driven plasma accelerator

    E-Print Network [OSTI]

    2008-01-01

    GeV electron beams from cm-scale channel guided laser wake?the generation of GeV-class electron beams using an intenseranges and high-quality electron beams with energy up to 1

  5. Beam On Target! - CEBAF Accelerator Achieves 12 GeV Commissioning...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in an experimental hall, recording the first data of the 12 GeV era. The machine sent electrons around the racetrack three times (known as "3-pass" beam), resulting in 6.11 GeV...

  6. A new physics era at 12 GeV | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A new physics era at 12 GeV January 29, 2015 In several articles over the past years, we have written of progress with the CEBAF 12 GeV Upgrade Project. Since the beginning of...

  7. Commercialization potential of compositionally graded Ge - Si??x?Gex? - Si substrates for solar applications

    E-Print Network [OSTI]

    Goh, Johnathan Jian Ming

    2006-01-01

    This project considers the potential of Ge - Si??x?Gex? - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge ...

  8. Discovery of GeV Emission tfrom the Circinus Galaxy with the...

    Office of Scientific and Technical Information (OSTI)

    Discovery of GeV Emission tfrom the Circinus Galaxy with the Fermi-Lat Citation Details In-Document Search Title: Discovery of GeV Emission tfrom the Circinus Galaxy with the...

  9. High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process

    E-Print Network [OSTI]

    Lin, Hsin-Chang

    2015-01-01

    1.3 Millimeter-Wave Signal Generation 1.4 ThesisPower Millimeter-Wave Signal Generation in Advanced SiGe andPower Millimeter-Wave Signal Generation in Advanced SiGe and

  10. EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

  11. Epitaxial Ge/Il-V Heterostructures : MOCVD growth, characterization, and applications

    E-Print Network [OSTI]

    Bai, Yu, Ph.D. Massachusetts Institute of Technology

    2011-01-01

    Epitaxial Ge thin films are being investigated for many important roles in next generation microelectronics. Metal-oxide-semiconductor field effect transistors (MOSFETs) utilizing Ge channels have demonstrated dramatic ...

  12. Optical Observations of Gamma-Ray Bursts: Connections to GeV...

    Office of Scientific and Technical Information (OSTI)

    Optical Observations of Gamma-Ray Bursts: Connections to GeVTeV Jets Citation Details In-Document Search Title: Optical Observations of Gamma-Ray Bursts: Connections to GeVTeV...

  13. GE to Invest in Penn State Center to Study Natural Gas Supply...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    window) GE to Invest in Penn State Center to Study Natural Gas Supply Chains University Park, Pa. - GE announced it will invest up to 10 million in Penn State to establish a new...

  14. LIFETIME AND RADIATIVE EFFICIENCY VS DENSITY IN THE STRAIN-CONFINED ELECTRON-HOLE LIQUID IN Ge

    E-Print Network [OSTI]

    Kelso, Susan M.

    2011-01-01

    electron-hole liquid (SCEHL) in Ge. Sample CR50 was T = 1.9CONFINED ELECTRON-HOLE LIQUID IN Ge Susan M. Kelso and JohnCONFINED ELECTRON-HOLE LIQUID IN Ge Susan M. Kelso and John

  15. Ris-M-2737 ' / > ^ ' ' . / , / -THE PHASES OF Pb/Ge(lll)

    E-Print Network [OSTI]

    #12;Risø-M-2737 ' / > ^ ' ' . / , / - THE PHASES OF Pb/Ge(lll): A SURFACE X-RAY DIFFRACTION STUDY of a chemisorbed overlayer of Pb on the Ge(lll) surface. Three phases of Pb/Ge(lll) exist in the monolayer regime: the a- and B-phases with a V3xV3R30° unit cell, and a high-temperature IX1 phase. In the 1X1 phase of Pb/Ge

  16. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01

    ferromagnetic Mn 5 Ge 3 for spintronic applications. Phys.dopants of interest for spintronic applications, where both

  17. 2D-GE IMAGE SEGMENTATION BASED ON LEVEL-SETS E.A. Mylona a

    E-Print Network [OSTI]

    Athens, University of

    2D-GE IMAGE SEGMENTATION BASED ON LEVEL-SETS E.A. Mylona a , M.A. Savelonas a , D. Maroulis a , M of protein spots in 2D-GE images. The proposed scheme incorporates a protein spot detection stage based both software packages in terms of segmentation performance. Index Terms--2D-GE Images, Protein Spot

  18. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01

    Mn-Si (red squares) and Mn-Ge distances (blue circles) d asof the number of Si or Ge nearest neighbours N c ; (c) localthree Mn atoms with different N c in a-Mn 0.094 Ge 0.906 .

  19. Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays

    E-Print Network [OSTI]

    Javey, Ali

    Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays Yu-Lun Chueh,,§,|,# Zhiyong, ROC ABSTRACT Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays

  20. Defects in Ge and Si caused by 1 MeV Si+ implantation*

    E-Print Network [OSTI]

    Florida, University of

    Defects in Ge and Si caused by 1 MeV Si+ implantation* D. P. Hickeya Department of Materials defect formation and evolution in the 001 Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si dissolve at the projected range for nonamorphizing implants into Si. However, in Ge, no 311 defect

  1. Formation of Ge nanoclusters on Si(1 1 1)-7 7 surface at high temperature

    E-Print Network [OSTI]

    Gao, Hongjun

    Formation of Ge nanoclusters on Si(1 1 1)-7 · 7 surface at high temperature H.M. Guo, Y.L. Wang, H for publication 17 May 2004 Available online 5 June 2004 Abstract We report on Ge nanocluster formation on Si(1 1 of the Ge clusters are more uniform than those obtained at room temperature due to an increase

  2. Transistor-Based Ge/SOI Photodetector for Integrated Silicon Photonics

    E-Print Network [OSTI]

    Luo, Xi

    2011-01-01

    11. Y. -H. Kuo, Y. -K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I.Colace and G. Assanto, “Poly-Ge Near-infrared PhotodetectorsMasini and G. Assanto, “Ge on Si p-i-n photodiodes operating

  3. Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping

    E-Print Network [OSTI]

    Rommel, Sean

    Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping technique D. Pawlik, S. Sieg, S.K. Kurinec, S.L. Rommel, Z. Cheng, J.-S. Park, J. Hydrick and A. Lochtefeld A Ge Esaki diode is demonstrated on Si atop a coalesced epitaxial layer of Ge grown through narrow openings in SiO2

  4. Materials synthesis and investigation of itinerant ferromagnetism in the UCo?-xFex Ge system

    E-Print Network [OSTI]

    Huang, Kevin

    2009-01-01

    B. UCo 1?x Fe x Ge . . . . . . . . . . . . . 1. Polycrystalvs temperature data of UCo 1?x Fe x Ge from x = 0.0 to x =vs temperature data of UCo 1?x Fe x Ge from x = 0.20 to x =

  5. Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition. Kassem Ilmenau (Germany) Abstract. In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface

  6. Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells

    E-Print Network [OSTI]

    Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells Q. Mi, X. Xiao report the first room-temperature 1.3 ,um electroluminescence from strained Sir-,Ge,/Si quantum wells to that from the Sit-,GeX wells. A minimum band offset is required to have effective room

  7. GE & AE Extension Request Form, Version 8, Feb 2013, JC Program Extension

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 8, Feb 2013, JC Program Extension General English English (GE) Academic English (AE) 2. Which term will this extension begin? Fall Winter Spring Summer 3 of General English do you wish to request? 1 2 3 4 5 6 (GE sessions are 5 weeks) How many General English

  8. Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si

    E-Print Network [OSTI]

    Rokhinson, Leonid

    Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si L. P and photoluminescence PL spectroscopy of self-assembled Ge dots grown on Si 100 by molecular beam epitaxy. PL spectra show a transition from two- to three-dimensional growth as the Ge thickness exceeds 7 Å. The sum

  9. Why is GeV physics relevant in the age of the LHC?

    SciTech Connect (OSTI)

    Pennington, Michael R. [JLAB

    2014-02-01

    The contribution that Jefferson Lab has made, with its 6 GeV electron beam, and will make, with its 12 GeV upgrade, to our understanding of the way the fundamental interactions work, particularly strong coupling QCD, is outlined. The physics at the GeV scale is essential even in TeV collisions.

  10. Atomic and electronic structure of styrene on Ge(100) Do Hwan Kim a

    E-Print Network [OSTI]

    Kim, Sehun

    Atomic and electronic structure of styrene on Ge(100) Do Hwan Kim a , Yun Jeong Hwang b , Junga: Styrene Ge(100) Adsorption DFT calculations STM Coverage-dependent adsorption structures of styrene favorable configuration at room temperature is that the two styrene molecules are bound to two Ge dimers

  11. Measurement of the neutron-capture cross section of 76Ge and 74Ge below 15 MeV and its relevance to 0??? decay searches of 76Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bhike, Megha; Fallin, B.; Tornow, W.

    2015-02-01

    The neutron radiative-capture cross section of 76Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of View the MathML source?86%Ge76 and View the MathML source?14%Ge74 used in the 0???0??? searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the View the MathML sourceH3(p,n)He3, View the MathML sourceH2(d,n)He3 and View the MathML sourceH3(d,n)He4 reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for 74Ge at neutron energies below 8 MeV. Indium andmore »gold foils were irradiated simultaneously for neutron fluence determination. High-resolution ?-ray spectroscopy was used to determine the ?-ray activity of the daughter nuclei of interest. For the 76Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the View the MathML sourceGe74(n,?)Ge75 reaction, the present data are about a factor of two larger than predicted. It was found that the View the MathML sourceGe74(n,?)Ge75 yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the View the MathML sourceGe76(n,?)Ge77 yield due to the larger cross section of the former reaction.« less

  12. GRB 131231A: IMPLICATIONS OF THE GeV EMISSION

    SciTech Connect (OSTI)

    Liu, Bin; Chen, Wei; Liang, Yun-Feng; Zhou, Bei; He, Hao-Ning; Jin, Zhi-Ping; Fan, Yi-Zhong; Wei, Da-Ming [Key laboratory of Dark Matter and Space Astronomy, Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China); Tam, Pak-Hin Thomas [Institute of Astronomy and Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Shao, Lang, E-mail: liangyf@pmo.ac.cn, E-mail: beizhou@pmo.ac.cn, E-mail: yzfan@pmo.ac.cn, E-mail: dmwei@pmo.ac.cn, E-mail: phtam@phys.nthu.edu.tw [Department of Physics, Hebei Normal University, Shijiazhuang 050024 (China)

    2014-05-20

    GRB 131231A was detected by the Large Area Telescope on board the Fermi Space Gamma-ray Telescope. The high-energy gamma-ray (>100 MeV) afterglow emission spectrum is F {sub ?}??{sup –0.54} {sup ±} {sup 0.15} in the first ?1300 s after the trigger and the most energetic photon has an energy of ?62 GeV, arriving at t ? 520 s. With reasonable parameters of the gamma-ray burst (GRB) outflow as well as the density of the circum-burst medium, the synchrotron radiation of electrons or protons accelerated at an external forward shock have difficulty accounting for the data. Rather, the synchrotron self-Compton radiation of the forward shock-accelerated electrons can account for both the spectrum and temporal behavior of the GeV afterglow emission. We also show that the prospect for detecting GRB 131231A-like GRBs with the Cherenkov Telescope Array is promising.

  13. The 12 GeV Energy Upgrade at Jefferson Laboratory

    SciTech Connect (OSTI)

    Pilat, Fulvia C.

    2012-09-01

    Two new cryomodules and an extensive upgrade of the bending magnets at Jefferson Lab has been recently completed in preparation for the full energy upgrade in about one year. Jefferson Laboratory has undertaken a major upgrade of its flagship facility, the CW re-circulating CEBAF linac, with the goal of doubling the linac energy to 12 GeV. I will discuss here the main scope and timeline of the upgrade and report on recent accomplishments and the present status. I will then discuss in more detail the core of the upgrade, the new additional C100 cryomodules, their production, tests and recent successful performance. I will then conclude by looking at the future plans of Jefferson Laboratory, from the commissioning and operations of the 12 GeV CEBAF to the design of the MEIC electron ion collider.

  14. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  15. Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

    SciTech Connect (OSTI)

    Oya, N.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2014-06-30

    The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325?°C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200??m in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility.

  16. Gamma-Ray Bursts Above 1 GeV

    E-Print Network [OSTI]

    Matthew G. Baring

    1997-11-21

    One of the principal results obtained by the Compton Gamma Ray Observatory relating to the study of gamma-ray bursts was the detection by the EGRET instrument of energetic ($>$100 MeV) photons from a handful of bright bursts. The most extreme of these was the single 18 GeV photon from the GRB940217 source. Given EGRET's sensitivity and limited field of view, the detection rate implies that such high energy emission may be ubiquitous in bursts. Hence expectations that bursts emit out to at least TeV energies are quite realistic, and the associated target-of-opportunity activity of the TeV gamma-ray community is well-founded. This review summarizes the observations and a handful of theoretical models for generating GeV--TeV emission in bursts sources, outlining possible ways that future positive detections could discriminate between different scenarios. The power of observations in the GeV--TeV range to distinguish between spectral structure intrinsic to bursts and that due to the intervening medium between source and observer is also discussed.

  17. Quantum confinement in Si and Ge nanostructures: Theory and experiment

    SciTech Connect (OSTI)

    Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.

    2014-03-15

    The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO{sub 2}, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si{sub 3}N{sub 4} and Al{sub 2}O{sub 3}. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.

  18. GeV emission from Gamma-Ray Burst afterglows

    E-Print Network [OSTI]

    A. Panaitescu

    2008-01-10

    We calculate the GeV afterglow emission expected from a few mechanisms related to GRBs and their afterglows. Given the brightness of the early X-ray afterglow emission measured by Swift/XRT, GLAST/LAT should detect the self-Compton emission from the forward-shock driven by the GRB ejecta into the circumburst medium. Novel features discovered by Swift in X-ray afterglows (plateaus and chromatic light-curve breaks) indicate the existence of a pair-enriched, relativistic outflow located behind the forward shock. Bulk and inverse-Compton upscattering of the prompt GRB emission by such outflows provide another source of GeV afterglow emission detectable by LAT. The large-angle burst emission and synchrotron forward-shock emission are, most likely, too dim at high photon energy to be observed by LAT. The spectral slope of the high-energy afterglow emission and its decay rate (if it can be measured) allow the identification of the mechanism producing the GeV transient emission following GRBs.

  19. Exclusive processes at JLab at 6 GeV

    SciTech Connect (OSTI)

    Kim, Andrey

    2015-01-01

    Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS) and Deeply Virtual Meson Production (DVMP) have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for ?0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and ?t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs) model. Successful description of the recent CLAS ?0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

  20. Strained Sistrained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor

    E-Print Network [OSTI]

    Strained SiÕstrained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility By growing heterostructures that combine a surface strained Si layer with a buried strained Ge layer on Si0.5Ge0.5 , we have fabricated metal-oxide-semiconductor field-effect transistors with mobility

  1. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2}

    SciTech Connect (OSTI)

    Peter, Sebastian C. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Malliakas, Christos D. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Nakotte, Heinze; Kothapilli, Karunakar [Physics Department, New Mexico State University, Las Cruces, NM 88003 (United States); Los Alamos Neutron Science Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Rayaprol, Sudhindra [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, R-5 Shed, Trombay, Mumbai 400085 (India); Schultz, Arthur J. [X-Ray Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Kanatzidis, Mercouri G., E-mail: m-kanatzidis@northwestern.edu [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2012-03-15

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a=12.2261(20) Angstrom-Sign , b=10.7447(20) Angstrom-Sign , c=8.4754(17) Angstrom-Sign and {beta}=110.288(30) Degree-Sign (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge){sub n}. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a=b=5.9874(6) Angstrom-Sign and c=15.1178(19) Angstrom-Sign . The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{proportional_to}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures. - Graphical abstract: The compounds Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are obtained from reactions of Yb and Ge in excess liquid gallium. Highlights: Black-Right-Pointing-Pointer Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are two new polygallides. Black-Right-Pointing-Pointer The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was established using neutron diffraction data. Black-Right-Pointing-Pointer YbGa{sub 4}Ge{sub 2} is one of the rare polar intermetallic compounds. Black-Right-Pointing-Pointer The physical properties of Yb{sub 3}Ga{sub 7}Ge{sub 3} point to a Fermi-liquid regime at low temperature.

  2. Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces

    SciTech Connect (OSTI)

    Shklyaev, A. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Shegai, O. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Nakamura, Y. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Ichikawa, M. [Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-05-28

    Photoconductivity (PC) of Si/Ge structures with Ge quantum dots (QDs) grown on the Si(100) surfaces covered with the ultrathin, about 0.3–0.5?nm thick, SiO{sub 2} films is studied as a function of the interband light intensity under various lateral voltages. The structures exhibit PC with steps and a step with a peak at the step edge for low- and high-temperature grown structures, respectively. These PC features are associated with the impact ionization of QD-related excitons. The PC at step edges increases by several orders of magnitude for a certain value which is governed by the balance between rates of photo-generation, recombination, and impact ionization of excitons. The electron localization deeper in Si from the Ge QD layer in conjunction with a narrow binding-energy distribution of excitons is suggested to be the main reason that provides the sharpness of PC steps. The PC appears to be very sensitive to the impact ionization and QD preparation conditions. This allows revealing the specific characteristics of QD structures, related to their electronic and structural properties.

  3. Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe

    E-Print Network [OSTI]

    Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge and computer memory, but the structure of the amorphous phases and the nature of the phase transition of types A Ge and Sb and B Te , an "ABAB square." The rapid amorphous-to-crystalline phase change

  4. Large-angle production of charged pions by 3 GeV/c - 12.9 GeV/c protons on beryllium, aluminium and lead targets

    E-Print Network [OSTI]

    HARP Collaboration

    2007-09-21

    Measurements of the double-differential $\\pi^{\\pm}$ production cross-section in the range of momentum $100 \\MeVc \\leq p beryllium, proton--aluminium and proton--lead collisions are presented. The data were taken with the HARP detector in the T9 beam line of the CERN PS. The pions were produced by proton beams in a momentum range from 3 \\GeVc to 12.9 \\GeVc hitting a target with a thickness of 5% of a nuclear interaction length. The tracking and identification of the produced particles was performed using a small-radius cylindrical time projection chamber (TPC) placed inside a solenoidal magnet. Incident particles were identified by an elaborate system of beam detectors. Results are obtained for the double-differential cross-sections at six incident proton beam momenta (3 \\GeVc, 5 \\GeVc, 8 \\GeVc, 8.9 \\GeVc (Be only), 12 \\GeVc and 12.9 \\GeVc (Al only)) and compared to previously available data.

  5. GE & AE Extension Request Form, Version 7, Sept 2012, JC Program Extension General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 7, Sept 2012, JC Program Extension ­ General English) General English (GE) Academic English (AE) Which term will this extension begin? Fall Winter Spring Summer more sessions of GE do you wish to request? 1 2 3 4 5 6 Other ____ (GE sessions are 4 weeks) *Please

  6. Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films

    SciTech Connect (OSTI)

    Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

    2014-03-18

    Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, ? = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing ? from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of ? is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (?) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (? = 550 nm) to 2.62 and occurs at ? = 0.25. Finally n drops to 1.60 for ? = 0.50–1.00, where the films become GeO2. A detailed correlation between ?, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

  7. GE & AE Extension Request Form, Version 6, May 2012, JC Program Extension General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 6, May 2012, JC Program Extension ­ General English) General English (GE) Academic English (AE) Which term will this extension begin? Fall Winter Spring Summer more sessions of GE do you wish to request? 1 2 3 4 5 6 Other ____ (GE sessions are 4 weeks) *Please

  8. GE & AE Program Change Request Form, Version 12, July 2013, ML Program Change-General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Program Change Request Form, Version 12, July 2013, ML Program Change-General English English student, and I would like to switch to General English. How many sessions of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take? 21 hours 27 hours

  9. Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells

    E-Print Network [OSTI]

    Deng, Xunming

    Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc- Si) triple-junction solar cell due to its higher optical in an a-Si based multiple- junction solar cell. 1. INTRODUCTION Narrow bandgap amorphous SiGe (a

  10. Characterization of second-phase plates in a Gd5Ge3 intermetallic compound

    SciTech Connect (OSTI)

    Cao, Qing; Chumbley, Leonard S.

    2013-05-16

    Rare-earth compounds based on the stoichiometry R5(SixGe1?x)4 (R = rare-earth elements) exhibit many unusual features, including possessing R5(SixGe1?x)3 thin plates which always precipitate from the matrix despite efforts to suppress their formation. In an effort to better understand the unique relationship between these two intermetallic alloy systems, the bulk microstructure of the compound Gd5Ge3 was examined using scanning (SEM) and transmission electron microscopy (TEM) and optical microscopy. Surprisingly, SEM examination revealed a series of thin plates present in the Gd5Ge3 matrix similar to what is seen in Gd5Ge4. TEM observation revealed that a role reversal had occurred, with the thin plates possessing the orthorhombic structure and composition of Gd5Ge4. The orientation relationship between Gd5Ge4 thin plates and the Gd5Ge3 matrix was determined to be Graphic the same relationship reported for Gd5Ge3 plates precipitating from a Gd5Ge4 matrix. However, by exchanging the respective roles of the phases as regards matrix vs. precipitate, the total number of precipitation variants seen can be increased from two to six. The persistence with which these two intermetallic systems co-exist is truly unique. However, understanding exactly the kinetic and thermodynamic conditions that lead to their unique relationship is hampered by the high formation temperatures at which the observed reaction occurs.

  11. Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers

    SciTech Connect (OSTI)

    Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo; Lei, Xiao-Wu

    2013-10-15

    One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å{sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV–vis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: • One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. • The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. • The first example of inorganic–organic hybrid thiogermanates with mixed valent Ge centers.

  12. Formation of nickel germanide on SiO{sub 2}-capped n-Ge to lower its Schottky barrier height

    SciTech Connect (OSTI)

    Lin, Guangyang; Tang, Mengrao; Li, Cheng, E-mail: lich@xmu.edu.cn; Huang, Shihao; Lu, Weifang; Wang, Chen; Yan, Guangming; Chen, Songyan [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)] [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)

    2013-12-16

    In this Letter, NiGe/SiO{sub 2}/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO{sub 2} films to form NiGe. The equivalent Schottky barrier height reduced from 0.58?eV for NiGe/n-Ge to ohmic contact. The anomalous diffusion behavior and accumulation of Ge in the SiO{sub 2} near the NiGe/SiO{sub 2} interface can be explained by vacancy-enhanced Ge diffusion. It is proposed that the presence of vacancies and Ge atoms embedded in the SiO{sub 2} layer play a significant role in the current enhancement by generation of multiple levels in the SiO{sub 2} band gap.

  13. Nitrogen-doped and simultaneously reduced graphene oxide with superior dispersion as electrocatalysts for oxygen reduction reaction

    SciTech Connect (OSTI)

    Lee, Cheol-Ho; Yun, Jin-Mun; Lee, Sungho; Jo, Seong Mu; Yoo, Sung Jong; Cho, Eun Ae; Khil, Myung-Seob; Joh, Han-Ik

    2014-11-15

    Nitrogen doped graphene oxide (Nr-GO) with properties suitable for electrocatalysts is easily synthesized using phenylhydrazine as a reductant at relatively low temperature. The reducing agent removes various oxygen functional groups bonded to graphene oxide and simultaneously dope the nitrogen atoms bonded with phenyl group all over the basal planes and edge sites of the graphene. The Nr-GO exhibits remarkable electrocatalytic activities for oxygen reduction reaction compared to the commercial carbon black and graphene oxide due to the electronic modification of the graphene structure. In addition, Nr-GO shows excellent dispersibility in various solvent due to the dopant molecules.

  14. GE & AE Program Change Form, Version 9, May 2012, JC Program Change General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Program Change Form, Version 9, May 2012, JC Program Change ­ General English or Academic to GE. How many more sessions of GE do you wish to request? 1 2 3 4 5 6 How many GE hours do you wish to take? 21 hours 27 hours 2) ____ I am a GE student, and I would like to switch to AE. How many more

  15. Reliable reduction of Fermi-level pinning at atomically matched metal/Ge interfaces by sulfur treatment

    SciTech Connect (OSTI)

    Kasahara, K.; Yamada, S.; Miyao, M. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Sakurai, T.; Sawano, K.; Nohira, H. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan); Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan)

    2014-04-28

    This study demonstrates that by using a sulfur (S) treatment on the Ge surface, a reduction in Fermi level pinning can reproducibly be achieved at atomically matched metal/Ge(111) interfaces. The Schottky barrier height for p-type Ge can be controlled by changing the metal work function despite the metal/Ge junctions. The results indicate that the combination of atomic-arrangement matching and S treatment can remove extrinsic factors influencing Fermi level pinning at metal/Ge interfaces.

  16. Diamond turning of Si and Ge single crystals

    SciTech Connect (OSTI)

    Blake, P.; Scattergood, R.O.

    1988-12-01

    Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

  17. Extended Battery Life in Electric Vehicles | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFES OctoberEvan Racah Evan-5 BeamlineGE, Ford, University of

  18. Miniaturized Turbine Offers Desalination Solution | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory ofDid you notHeatMaRIEdioxide capture |GE Puts Desalination "on Ice"

  19. Crystal Lake - GE Energy Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButtePower VenturesInformation9) Wind Farm Jump to: navigation, search NameGE

  20. Northern Colorado Wind Energy Center (GE) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsourceII Jump to:Information 3rd| OpenInformationConsortium NAVC JumpGE) Jump to:

  1. Notrees 1B (GE Energy) Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsourceII Jump to:Information 3rd|Northfork Electric Coop, IncUSA(TXR150000) |B (GE

  2. Gambit Satellite Work Declassified After 25 Years | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear PhysicsGE GlobalGetting&Tools »Gambit

  3. Microgravity and Vision in Astronauts | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matterEnergyPublicatonsSubstancesproteinGE Researchers Study

  4. Effects of rapid thermal annealing on the structural and local atomic properties of ZnO: Ge nanocomposite thin films

    SciTech Connect (OSTI)

    Ceylan, Abdullah Ozcan, Sadan; Rumaiz, Abdul K.; Caliskan, Deniz; Ozbay, Ekmel; Woicik, J. C.

    2015-03-14

    We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600?°C for 30, 60, and 90?s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27?nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO:Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA.

  5. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    SciTech Connect (OSTI)

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman [Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H. [Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan (China); Loubychev, Dmitri; Liu, Amy; Fastenau, Joel [IQE, Inc., Bethlehem, Pennsylvania 18015 (United States); Lindemuth, Jeff [Lake Shore Cryotronics, Westerville, Ohio 43082 (United States)

    2014-08-04

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5× lower effective mass for s-InSb compared to s-Ge quantum well at 1.9?×?10{sup 12}?cm{sup –2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  6. Observation of optical spin injection into Ge-based structures at room temperature

    SciTech Connect (OSTI)

    Yasutake, Yuhsuke; Hayashi, Shuhei; Fukatsu, Susumu; Yaguchi, Hiroyuki

    2013-06-17

    Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge{sub 0.8}Si{sub 0.2} quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge.

  7. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    SciTech Connect (OSTI)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-03-22

    The stability of the crystalline phase of binary phase-change Ge{sub x}Sb{sub 1-x} films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T{sub Ge}{sup p} to the rate of change dT{sub cryst}/dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T{sub cryst} is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  8. Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells

    SciTech Connect (OSTI)

    Fan, W. J.

    2013-11-14

    Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band k·p method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30?×?10{sup 18}?cm{sup ?3}.

  9. Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I

    E-Print Network [OSTI]

    Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I M. Agostini,14 M. Allardt,3 E and a lower limit is derived for the half-life of neutrinoless double beta decay of 76 Ge, T0 1/2> 2.1 · 1025 double beta decay of the isotope 76 Ge. Data con- sidered in the present analysis have been collected

  10. Detector development for Jefferson Lab's 12GeV Upgrade

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qiang, Yi

    2015-05-01

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers,more »the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.« less

  11. 12 GeV Upgrade Project - Cryomodule Production

    SciTech Connect (OSTI)

    J. Hogan, A. Burrill, G.K. Davis, M.A. Drury, M. Wiseman

    2012-07-01

    The Thomas Jefferson National Accelerator Facility (Jefferson Lab) is producing ten 100+MV SRF cryomodules (C100) as part of the CEBAF 12 GeV Upgrade Project. Once installed, these cryomodules will become part of an integrated accelerator system upgrade that will result in doubling the energy of the CEBAF machine from 6 to 12 GeV. This paper will present a complete overview of the C100 cryomodule production process. The C100 cryomodule was designed to have the major components procured from private industry and assembled together at Jefferson Lab. In addition to measuring the integrated component performance, the performance of the individual components is verified prior to being released for production and assembly into a cryomodule. Following a comprehensive cold acceptance test of all subsystems, the completed C100 cryomodules are installed and commissioned in the CEBAF machine in preparation of accelerator operations. This overview of the cryomodule production process will include all principal performance measurements, acceptance criterion and up to date status of current activities.

  12. Radiation microscope for SEE testing using GeV ions.

    SciTech Connect (OSTI)

    Doyle, Barney Lee; Knapp, James Arthur; Rossi, Paolo; Hattar, Khalid M.; Vizkelethy, Gyorgy; Brice, David Kenneth; Branson, Janelle V.

    2009-09-01

    Radiation Effects Microscopy is an extremely useful technique in failure analysis of electronic parts used in radiation environment. It also provides much needed support for development of radiation hard components used in spacecraft and nuclear weapons. As the IC manufacturing technology progresses, more and more overlayers are used; therefore, the sensitive region of the part is getting farther and farther from the surface. The thickness of these overlayers is so large today that the traditional microbeams, which are used for REM are unable to reach the sensitive regions. As a result, higher ion beam energies have to be used (> GeV), which are available only at cyclotrons. Since it is extremely complicated to focus these GeV ion beams, a new method has to be developed to perform REM at cyclotrons. We developed a new technique, Ion Photon Emission Microscopy, where instead of focusing the ion beam we use secondary photons emitted from a fluorescence layer on top of the devices being tested to determine the position of the ion hit. By recording this position information in coincidence with an SEE signal we will be able to indentify radiation sensitive regions of modern electronic parts, which will increase the efficiency of radiation hard circuits.

  13. Detector development for Jefferson Lab's 12GeV Upgrade

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qiang, Yi [JLAB] (ORCID:0000000170267841)

    2015-05-01

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers, the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.

  14. Sr{sub 7}Ge{sub 6}, Ba{sub 7}Ge{sub 6} and Ba{sub 3}Sn{sub 2} -Three new binary compounds containing dumbbells and four-membered chains of tetrel atoms with considerable Ge-Ge {pi}-bonding character

    SciTech Connect (OSTI)

    Siggelkow, Lisa; Hlukhyy, Viktor [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany); Faessler, Thomas F., E-mail: thomas.faessler@lrz.tum.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany)

    2012-07-15

    The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} were prepared by arc melting and annealing in welded tantalum ampoules using induction as well as resistance furnaces. The compounds were investigated by powder and single crystal X-ray diffraction. Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} crystallize in the Ca{sub 7}Sn{sub 6} structure type (space group Pmna, Z=4: a=7.777(2) A, b=23.595(4) A, c=8.563(2) A, wR{sub 2}=0.081 (all data), 2175 independent reflections, 64 variable parameters for Sr{sub 7}Ge{sub 6} and a=8.0853(6) A, b=24.545(2) A, c=8.9782(8) A, wR{sub 2}=0.085 (all data), 2307 independent reflections, 64 variable parameters for Ba{sub 7}Ge{sub 6}). Ba{sub 3}Sn{sub 2} crystallizes in an own structure type with the space group P4{sub 3}2{sub 1}2, Z=4, a=6.6854(2) A, c=17.842(2) A, wR{sub 2}=0.037 (all data), 1163 independent reflections, 25 variable parameters. In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains. Their crystal structures cannot be rationalized according to the (8-N) rule. In contrast, Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. The chemical bonding situation in these structures is discussed on the basis of partial and total Density Of States (DOS) curves, band structures including fatbands, topological analysis of the Electron Localization Function (ELF) as well as Bader analysis of the bond critical points using the programs TB-LMTO-ASA and WIEN2K. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, all germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. The {pi}-bonding character of the germanides is best reflected by the resonance hybrid structures {l_brace}[Ge-Ge]{sup 6-}/[Ge-{sup ....}Ge-{sup ....}Ge-{sup ....}Ge]{sup 8-}{r_brace}{r_reversible}{l_brace}[Ge=Ge]{sup 4-}/[Ge-Ge-Ge-Ge]{sup 10-}{r_brace}. - Graphical abstract: The structure of Ba{sub 3}Sn{sub 2} contains Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains are the predominant features in Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6}. Their crystal structures cannot be rationalized according to the (8-N) rule. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, the germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. Highlights: Black-Right-Pointing-Pointer The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} have been synthesized. Black-Right-Pointing-Pointer In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as dumbbells and four-membered atom chains. Black-Right-Pointing-Pointer Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif. Black-Right-Pointing-Pointer The chemical bonding situation within these structures is discussed.

  15. Effect of stacking sequence on crystallization in Al/a-Ge bilayer thin films

    SciTech Connect (OSTI)

    Zhang, Tianwei; Zhang, Weilin; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: kwxu@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi 710049 (China); Huang, Yuhong [College of Physics and Information Technology, Shaanxi Normal University, Xi'an, Shaanxi 710062 (China); Xu, Kewei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: kwxu@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi'an University of Arts and Science, Xi'an, Shaanxi 710065 (China)

    2014-05-15

    Two types of bilayer thin films with different deposition sequences, i.e., amorphous Ge under Al (a-Ge/Al) and the inverse (Al/a-Ge), were prepared by magnetron sputtering at room temperature. In-situ and ex-situ thermal annealing were compared to study the effect of the stacking sequence on crystallization of amorphous Ge. Although metal-induced crystallization occurred in both cases at low temperature, layer exchange was observed only in a-Ge/Al. In fact, compressive stress could usually be produced when Ge atoms diffused into Al grain boundaries and crystallized there. In the a-Ge/Al system, the stress could be released through diffusion of Al atoms onto the surface and formation of hillocks. Thus, grain boundary (GB) mediated crystallization was dominant in the whole process and layer exchange occurred. However, in the Al/a-Ge system, it was difficult for stress to be relaxed because the Ge sublayer and substrate restricted the diffusion of Al atoms. GB-mediated crystallization was, therefore, considerably suppressed and interface-mediated crystallization was preferred without layer exchange. This leads to distinct morphologies of dendrites in the two systems.

  16. GE Hydro Asia Co Ltd formerly Kvaerner Power Equipment Co Ltd...

    Open Energy Info (EERE)

    Hydro Asia Co Ltd formerly Kvaerner Power Equipment Co Ltd Kvaerner Hangfa Jump to: navigation, search Name: GE Hydro Asia Co Ltd (formerly Kvaerner Power Equipment Co., Ltd...

  17. Electrical Spin Injection and Detection in Ge Nanowires and Topological Insulators

    E-Print Network [OSTI]

    Tang, Jianshi

    2014-01-01

    K. Future Perspectives for Spintronic Devices. J. Phys. D:Ferromagnetic Mn 5 Ge 3 for Spintronic Applications. Phys.Magnetic Anisotropy in Spintronic Devices. Spin 02,

  18. Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy

    E-Print Network [OSTI]

    2008-01-01

    Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byrate enhancement is due to a photo-chemical process. Thenanocrystals can be rapidly photo-oxidized. This oxidation

  19. GE to DOE General Counsel; Re:Request for Comment on Large Capacity...

    Broader source: Energy.gov (indexed) [DOE]

    to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer machines. GE also urges the DOE to adopt recommended...

  20. A New Kind of Industrial Company: Read GE's 2014 Annual Report...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    grid sector. Alstom will benefit from GE's strength in technology, service and in growth markets. In July, we began the spinoff of Synchrony Financial, our Retail Finance...

  1. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01

    ferromagnetic Mn 5 Ge 3 for spintronic applications. Phys.Wolf, S. A. et al. Spintronics: a spin-based electronicsdopants of interest for spintronic applications, where both

  2. Optical Observations of Gamma-Ray Bursts: Connections to GeV...

    Office of Scientific and Technical Information (OSTI)

    Observations of Gamma-Ray Bursts: Connections to GeVTeV Jets Vestrand, W. Thomas Los Alamos National Laboratory Astronomy & Astrophysics(79) Astronomy and Astrophysics Astronomy...

  3. Direct band gap optical emission from compressively strained Ge films grown on relaxed Si{sub 0.5}Ge{sub 0.5} substrate

    SciTech Connect (OSTI)

    Aluguri, R.; Manna, S.; Ray, S. K. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)] [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2013-10-14

    Compressively strained Ge films have been grown on relaxed Si{sub 0.5}Ge{sub 0.5} virtual substrate in ultra high vacuum using molecular beam epitaxy. Structural characterization has shown that the Ge films are compressively strained with partial strain relaxation in a film thicker than 3.0 nm, due to onset of island nucleation. Photoluminescence spectra exhibit the splitting of degenerate Ge valence band into heavy hole and light hole bands with a broad direct band gap emission peak around 0.81 eV. Temperature and excitation power dependent emission characteristics have been studied to investigate the mechanism of luminescence quenching at high temperatures and the role of non-radiative recombination centers.

  4. Conduction band offset at GeO{sub 2}/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

    SciTech Connect (OSTI)

    Zhang, W. F.; Nishimula, T.; Nagashio, K.; Kita, K.; Toriumi, A.

    2013-03-11

    We report a consistent conduction band offset (CBO) at a GeO{sub 2}/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and substrate type variance, while an accurate determination of valence band offset (VBO) by XPS requires a careful correction of differential charging phenomena. The VBO value was determined to be 3.60 {+-} 0.2 eV by XPS after charge correction, thus yielding a CBO (1.60 {+-} 0.2 eV) in excellent agreement with the IPE results. Such a large CBO (>1.5 eV) confirmed here is promising in terms of using GeO{sub 2} as a potential passivation layer for future Ge-based scaled CMOS devices.

  5. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 7, NO. 1, MARCH 2007 181 Impact of Strain or Ge Content on the Threshold

    E-Print Network [OSTI]

    Kumar, M. Jagadesh

    of Strain or Ge Content on the Threshold Voltage of Nanoscale Strained-Si/SiGe Bulk MOSFETs M. Jagadesh--The impact of strain on the threshold voltage of nanoscale strained-Si/SiGe MOSFETs is studied by developing a compact analytical model. Our model includes the effects of strain (Ge mole fraction in SiGe substrate

  6. Massive "spin-2" theories in arbitrary $D \\ge 3$ dimensions

    E-Print Network [OSTI]

    D. Dalmazi; A. L. R. dos Santos; E. L. Mendonça

    2014-08-28

    Here we show that in arbitrary dimensions $D\\ge 3$ there are two families of second order Lagrangians describing massive "spin-2" particles via a nonsymmetric rank-2 tensor. They differ from the usual Fierz-Pauli theory in general. At zero mass one of the families is Weyl invariant. Such massless theory has no particle content in $D=3$ and gives rise, via master action, to a dual higher order (in derivatives) description of massive spin-2 particles in $D=3$ where both the second and the fourth order terms are Weyl invariant, contrary to the linearized New Massive Gravity. However, only the fourth order term is invariant under arbitrary antisymmetric shifts. Consequently, the antisymmetric part of the tensor $e_{[\\mu\

  7. Complexes of self-interstitials with oxygen atoms in Ge

    SciTech Connect (OSTI)

    Khirunenko, L. I.; Pomozov, Yu. V.; Sosnin, M. G.; Abrosimov, N. V.; Riemann, H.

    2014-02-21

    Interactions of germanium self-interstitials with interstitial oxygen atoms in Ge subjected to irradiation at ?80 K and subsequently to annealing have been studied. To distinguish the processes involving vacancies and self-interstitials the doping with tin was used. It was shown that absorption lines with maximum at 602, 674, 713 and 803 cm{sup ?1} are self-interstitials-related. Two lines at 602 and 674, which develop upon annealing in the temperature range 180–240 K, belong to IO complexes, while the bands at 713 and 803 cm{sup ?1}, which emerge after annealing at T>220 K, are associated with I{sub 2}O. It is argued that the annealing of IO occurs by two mechanisms: by dissociation and by diffusion.

  8. Pressure Safety of JLAB 12GeV Upgrade Cryomodule

    SciTech Connect (OSTI)

    Cheng, Gary [JLAB; Wiseman, Mark A. [JLAB; Daly, Ed [JLAB

    2009-11-01

    This paper reviews pressure safety considerations, per the US Department of Energy (DOE) 10CFR851 Final Rule [1], which are being implemented during construction of the 100 Megavolt Cryomodule (C100 CM) for Jefferson Lab’s 12 GeV Upgrade Project. The C100 CM contains several essential subsystems that require pressure safety measures: piping in the supply and return end cans, piping in the thermal shield and the helium headers, the helium vessel assembly which includes high RRR niobium cavities, the end cans, and the vacuum vessel. Due to the vessel sizes and pressure ranges, applicable national consensus code rules are applied. When national consensus codes are not applicable, equivalent design and fabrication approaches are identified and implemented. Considerations for design, material qualification, fabrication, inspection and examination are summarized. In addition, JLAB’s methodologies for implementation of the 10 CFR 851 requirements are described.

  9. Blazar Variability and Evolution in the GeV Regime

    E-Print Network [OSTI]

    Tsujimoto, S; Nishijima, K; Kodani, K

    2015-01-01

    One of the most important problem of the blazar astrophysics is to understand the physical origin of the blazar sequence. In this study, we focus on the GeV gamma-ray variability of blazars and evolution perspective we search the relation between the redshift and the variability amplitude of blazars for each blazar subclass. We analyzed the Fermi-LAT data of the TeV blazars and the bright AGNs (flux $\\geq$ 4$\\times10^{-9}$ cm$^{-2}$s$^{-1}$) selected from the 2LAC (the 2nd LAT AGN catalog) data base. As a result, we found a hint of the correlation between the redshift and the variability amplitude in the FSRQs. Furthermore the BL Lacs which have relatively lower peak frequency of the synchrotron radiation and relatively lower redshift, have a tendency to have a smaller variability amplitude.

  10. Signal modeling of high-purity Ge detectors with a small read-out electrode and application to neutrinoless double beta decay search in Ge-76

    E-Print Network [OSTI]

    M. Agostini; C. A. Ur; D. Budjáš; E. Bellotti; R. Brugnera; C. M. Cattadori; A. di Vacri; A. Garfagnini; L. Pandola; S. Schönert

    2011-01-17

    The GERDA experiment searches for the neutrinoless double beta decay of Ge-76 using high-purity germanium detectors enriched in Ge-76. The analysis of the signal time structure provides a powerful tool to identify neutrinoless double beta decay events and to discriminate them from gamma-ray induced backgrounds. Enhanced pulse shape discrimination capabilities of "Broad Energy Germanium" detectors with a small read-out electrode have been recently reported. This paper describes the full simulation of the response of such a detector, including the Monte Carlo modeling of radiation interaction and subsequent signal shape calculation. A pulse shape discrimination method based on the ratio between the maximum current signal amplitude and the event energy applied to the simulated data shows quantitative agreement with the experimental data acquired with calibration sources. The simulation has been used to study the survival probabilities of the decays which occur inside the detector volume and are difficult to assess experimentally. Such internal decay events are produced by the cosmogenic radio-isotopes Ge-68 and Co-60 and the neutrinoless double beta decay of Ge-76. Fixing the experimental acceptance of the double escape peak of the 2.614 MeV photon to 90%, the estimated survival probabilities at Qbb = 2.039 MeV are (86+-3)% for Ge-76 neutrinoless double beta decays, (4.5+-0.3)% for the Ge-68 daughter Ga-68, and (0.9+0.4-0.2)% for Co-60 decays.

  11. The cross-plane thermoelectric properties of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices

    SciTech Connect (OSTI)

    Ferre Llin, L.; Samarelli, A.; Weaver, J. M. R.; Dobson, P. S.; Paul, D. J. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)] [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy)] [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Etzelstorfer, T.; Stangl, J. [Institute of Semiconductor and Solid State Physics, Johannes Kepler Universität, Linz (Austria)] [Institute of Semiconductor and Solid State Physics, Johannes Kepler Universität, Linz (Austria); Müller Gubler, E. [Electron Microscopy ETH Zurich, ETH Zurich, Wolfgang-Pauli-Str. 16, CH-8093 Zurich (Switzerland)] [Electron Microscopy ETH Zurich, ETH Zurich, Wolfgang-Pauli-Str. 16, CH-8093 Zurich (Switzerland)

    2013-09-30

    The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si{sub 0.5}Ge{sub 0.5} superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a range of microfabricated test structures. For samples with barriers around 0.5 nm in thickness, the measured Seebeck coefficients were comparable to bulk p-SiGe at similar doping levels suggesting the holes see the material as a random bulk alloy rather than a superlattice. The Seebeck coefficients for Ge quantum wells of 2.85 ± 0.85 nm increased up to 533 ± 25 ?V/K as the doping was reduced. The thermal conductivities are between 4.5 to 6.0 Wm{sup ?1}K{sup ?1} which are lower than comparably doped bulk Si{sub 0.3}Ge{sub 0.7} but higher than undoped Si/Ge superlattices. The highest measured figure of merit ZT was 0.080 ± 0.011 obtained for the widest quantum well studied. Analysis suggests that interface roughness is presently limiting the performance and a reduction in the strain between the quantum wells and barriers has the potential to improve the thermoelectric performance.

  12. Infrared absorption of n-type tensile-strained Ge-on-Si

    E-Print Network [OSTI]

    Wang, Xiaoxin

    We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct ? valley in n[superscript +] Ge-on-Si is reported ...

  13. Donor-vacancy pairs in irradiated n-Ge: A searching look at the problem

    SciTech Connect (OSTI)

    Emtsev, Vadim; Oganesyan, Gagik [IoffePhysicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ulitsa 26, 194021 St. Petersburg (Russian Federation)

    2014-02-21

    The present situation concerning the identification of vacancy-donor pairs in irradiated n-Ge is discussed. The challenging points are the energy states of these defects deduced from DLTS spectra. Hall effect data seem to be at variance with some important conclusions drawn from DLTS measurements. Critical points of the radiation-produced defect modeling in n-Ge are highlighted.

  14. GeV electron beams from a centimeter-scale channel guided laser wakefield acceleratora...

    E-Print Network [OSTI]

    Geddes, Cameron Guy Robinson

    GeV electron beams from a centimeter-scale channel guided laser wakefield acceleratora... K on the generation of GeV-class electron beams using an intense femtosecond laser beam and a 3.3 cm long preformed from 10­40 TW were guided over more than 20 Rayleigh ranges and high quality electron beams with energy

  15. OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR Xunming Deng

    E-Print Network [OSTI]

    Deng, Xunming

    OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR CELLS Xunming Deng Department, tandem and triple-junction a-SiGe based solar cells and materials [6-19]. Much of the research is also light and bias voltage for the measurement of multiple-junction cells. Materials characterization using

  16. |. aJr iri? GE DOCUMENT NO. 81AEP-003 DEVELOPMENT AND DEMONSTRATION

    E-Print Network [OSTI]

    Oak Ridge National Laboratory

    I / ~'j |. aJr iri? GE DOCUMENT NO. 81AEP-003 DEVELOPMENT AND DEMONSTRATION OF A STIRLING Government or any agency thereof. I #12;GE DOCUMENT NO. 81AEP-003 DEVELOPMENT AND DEMONSTRATION OF A STIRLING . . . . . . . . . . . . . . . . . 2-1 2.2 Engine/Compressor/Combustor Performance . . . . . . 2-1 5*C~~2.2.1 Performance

  17. Understanding Phase Transformation in Crystalline Ge Anodes for Li-Ion Batteries

    E-Print Network [OSTI]

    Cui, Yi

    studies. 1. INTRODUCTION One of the most important renewable energy storage technologies is lithium to silicon. Despite recent studies on Ge electrode reactions, there is still limited understanding elements, such as silicon (Si) and germanium (Ge), are very attractive candidates for high- capacity

  18. FTIR Emission Spectra, Molecular Constants, and Potential Curve of Ground State GeO

    E-Print Network [OSTI]

    Le Roy, Robert J.

    FTIR Emission Spectra, Molecular Constants, and Potential Curve of Ground State GeO Edward G. Lee-resolution FTIR emission spectroscopy measurements for the five common isoto- pomers of GeO are combined­9), photoelectron spectroscopy (10), electronic absorption (11­13), and emission (14) spectroscopy, and in matrix

  19. Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb

    E-Print Network [OSTI]

    Weinreb, Sander

    Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb with discussion of performance enhancements due to cooling of the device. Finally, the modeled noise performanceGe), cryogenic, low noise amplifier (LNA), noise parameters, transistor modeling. I. INTRODUCTION Very low-noise

  20. ORIGINAL PAPER Equation of state of MgGeO3 perovskite to 65 GPa: comparison

    E-Print Network [OSTI]

    Duffy, Thomas S.

    ORIGINAL PAPER Equation of state of MgGeO3 perovskite to 65 GPa: comparison with the post-perovskite- erties of the perovskite phase were compared to MgGeO3 post-perovskite phase near the observed phase the properties of the perovskite and post-perovskite phases in silicates. Keywords Germanate Á Perovskite Á