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Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

1LIU magazIne nr 2 2012 magazinelinkping university nr 2 2012  

E-Print Network (OSTI)

1LIU magazIne nr 2 2012 magazinelinköping university nr 2 2012 cable guys made the headlines biogas about new research findings and a popular language café. 18 Biogas fuels further expansion Linköping is investing heavily in biogas. 20 Antibiotic crisis a global threat Prescription of antibiotics has

Zhao, Yuxiao

2

Cleanroom Safety Training 2nd Edition, NR  

E-Print Network (OSTI)

Cleanroom Safety Training 2nd Edition, NR #12;All users must first complete the annual safety://ehs.wustl.edu/training/Pages/default.aspx #12;Areas of the Cleanroom Emergency ExitMain Entrance/Exit First Aid Kit Shower & Eye Wash Station or completion of any process off-hours requires a MINIMUM of 2 authorized users in the cleanroom at all times

Subramanian, Venkat

3

871 The Meteoritical Society, 2009. Printed in USA. Meteoritics & Planetary Science 44, Nr 6, 871878 (2009)  

E-Print Network (OSTI)

871 © The Meteoritical Society, 2009. Printed in USA. Meteoritics & Planetary Science 44, Nr 6, 871

Perfect, Ed

4

Document Nr. AE-FR-VHAMP_v1.0  

E-Print Network (OSTI)

Document Nr. AE-FR-VHAMP_v1.0 Date: 19 September, 2013 Doc. Title: VHAMP ­ Vertical and Horizontal and Heiner Körnich #12;Document Nr. AE-FR-VHAMP_v1.0 Date: 19 September, 2013 Doc. Title: VHAMP ­ Vertical conclusion from the study are 1. Along track integration of 85-100 km is needed to meet the mission

Marseille, Gert-Jan

5

Nr. 291 / 2010 // 11. Oktober 2010 Mehr Wrme vom Erdkern  

E-Print Network (OSTI)

S. 1 / 2 Nr. 291 / 2010 // 11. Oktober 2010 Mehr Wärme vom Erdkern an den Mantel sehr viel höher ist als bisher angenommen, so dass mehr Wärme vom Erdkern an den Mantel abgegeben wird

Ullmann, G. Matthias

6

Nr. 272 / 2012 // 28. September 2012 Zweites Bioenergiesymposium  

E-Print Network (OSTI)

S. 1 / 4 Nr. 272 / 2012 // 28. September 2012 Zweites Bioenergiesymposium an der Universität Bayreuth Die Bioenergieregion Bayreuth veranstaltet in Kooperation mit der Universität Bayreuth am Dienstag- ministerin Ilse Aigner das zweite Bayreuther Bioenergiesymposium. Das Symposium richtet sich an alle

Ullmann, G. Matthias

7

Lfd. Nr. Studiengang Universitt Link 1 Interdisziplinre Anthropologie  

E-Print Network (OSTI)

Lfd. Nr. Studiengang Universität Link 1 Interdisziplinäre Anthropologie (M.A.) Universität Freiburg (BaWü) http://www.master-anthropologie.uni-freiburg.de/ 2 Gerontologie (M.A.) Universität Erlangen (Bayern) http://www.geronto.uni-erlangen.de 3 Wissenschaftsforschung (M.A.) Humboldt-Universität Berlin

Schindelhauer, Christian

8

Nr. 171 // 2014 // 11. September Ressourceneffizienz vor Ort  

E-Print Network (OSTI)

Ressourceneffizienz Gemeinsame Tagung der Fraunhofer-Projektgruppe Prozessinnovation und der Fa. REHAU Die Fraunhofer Nr. 171 // 2014 // 11. September 2014 Die Fraunhofer-Projektgruppe Prozessinnovation am Lehrstuhl für Forschung und Innovation im Bereich der energie- und ressourceneffizienten Produktion geht. ,,Gerade

Ott, Albrecht

9

ArbeitsPAPier Nr. 178 | APril 2014 Gunvald Herdin  

E-Print Network (OSTI)

AP ArbeitsPAPier Nr. 178 | APril 2014 Gunvald Herdin Cort-Denis Hachmeister Der CHe Numerus Clausus Cort-Denis Hachmeister Der CHE Numerus Clausus-Check 2013/14 Eine Analyse des Anteils von NC Anteil der Studiengänge mit Numerus Clausus wird nach Bundesländern, den vier wichtigsten Fächergruppen

Heermann, Dieter W.

10

Working Papers / Documents de travail WP 2014 -Nr 33  

E-Print Network (OSTI)

, regarding recent striking and acute episodes of urban air pollution, the World Health Organization (WHO deterioration (outdoor air pollution, indoor air pollution, unsafe water etc). Say otherwise, worldwide healthWorking Papers / Documents de travail WP 2014 - Nr 33 The Cost of Pollution on Longevity, Welfare

Boyer, Edmond

11

Liste 1: PLANGRN Nr. Name Vorname Studiengang Semester Fakultt Gruppierung  

E-Print Network (OSTI)

(StuPa 2012) von Eitzen Doppe Saworski Meline Zettl Henschel Hennermann #12;Seite 2 Liste 2: INI|Chemie Nr. Name Vorname Studiengang Semester Fakultät Gruppierung 1 Jana 6 2 INI|Chemie 2 Erik 8 2 3 Oliver 2 2 INI|Chemie 4 Gabler Stefanie 6 2 INI|Chemie 5 Raphael 8 2 6 Chemie Master 2 2 INI|Chemie 7

Wichmann, Felix

12

AFSLUTNINGSRAPPORT Journal nr. 33031-0066  

E-Print Network (OSTI)

ethanol. Endelig er det testet at øge konceptets udbytte ved at producere biogas fra resten af det af gærceller. Fermentering (Xylose) Fermentering (Glucose) Fast brændstof Biogas proces ForbehandlingBiomasse BIOGAS ETHANOL Proces vand H2 Vådoxidation Enzymatisk hydrolysis + C6 fermentering Destillation Anaerob

13

Zuordnung von Lehrmodulen im Masterstudium Informatik Version: August 2012 Name Matr.-Nr.  

E-Print Network (OSTI)

Intelligente eingebettete Systeme BS Bildgebende Systeme Modul-Nr. Modulname KP LZF Note LM 1 LM 2 LM 3 LM 4 Modul-Nr. Modulname KP LZF Note LM 1 LM 2 LM 3 LM 4 LM 5 LM 6 LM 7 LM 8 Summe KP 3. Wahlpflichtmodul im Bereich Fachübergreifende Kompetenzen Modul-Nr. Modulname KP LM 1 4. Zusätzliche LM, die im Diploma Suppl

Lübeck, Universität zu

14

The Orphan Nuclear Receptor NR4A1 (Nur77) Regulates Oxidative and Endoplasmic Reticulum Stress in Pancreatic Cancer Cells  

Science Journals Connector (OSTI)

...Association for Cancer Research 15 April 2011 meeting-abstract...Deletion of NR4A orphan nuclear receptors in adult...subfamily of orphan nuclear receptors (NR4A1...NR4A3) function as nuclear transcription factors...lineage development program of HSC subpopulations...Association for Cancer Research; 2011 Apr 2-6...

Syng-Ook Lee; Un-Ho Jin; Jeong Han Kang; Sang Bae Kim; Aaron S. Guthrie; Sandeep Sreevalsan; Ju-Seog Lee; and Stephen Safe

2014-04-01T23:59:59.000Z

15

Microsoft Word - DE-NR0000031-075.doc  

National Nuclear Security Administration (NNSA)

ITEM NO. ITEM NO. SUPPLIES/SERVICES QUANTITY UNIT UNIT PRICE AMOUNT NAME OF OFFEROR OR CONTRACTOR 2 183 CONTINUATION SHEET REFERENCE NO. OF DOCUMENT BEING CONTINUED PAGE OF BECHTEL MARINE PROPULSION CORPORATION (A) (B) (C) (D) (E) (F) DE-NR0000031/075 a. Clause 4., Changes, is amended by removing the name G. W. Twardowski. Therefore, page 2 of Section H is deleted in its entirety and replaced with the new page 2 attached hereto. b. Clause 26., Responsible Corporate Official, is amended by inserting Bechtel National's new address. Therefore, page 10 of Section H is deleted in its entirety and replaced with the new page 10 attached hereto. c. Clause 29., Transition Period, is amended

16

Meteoritics & Planetary Science 38, Nr 6, 871885 (2003) Abstract available online at http://meteoritics.org  

E-Print Network (OSTI)

Meteoritics & Planetary Science 38, Nr 6, 871­885 (2003) Abstract available online at http://meteoritics.org 871 © Meteoritical Society, 2003. Printed in USA. Searching for the source regions of martian

Hamilton, Victoria E.

17

Nr. 73 / 06 vom 31. Oktober 2006 fr die Deutsche Sprachprfung  

E-Print Network (OSTI)

Nr. 73 / 06 vom 31. Oktober 2006 Ordnung für die Deutsche Sprachprüfung für den Hochschulzugang an der Universität Paderborn Vom 31. Oktober 2006 #12;2 Ordnung für die Deutsche Sprachprüfung für den besitzen. Dieser Nachweis kann gemä? § 2 Nr. 1 in Verbindung mit § 6 der ,,Rahmenordnung über deutsche

Hellebrand, Sybille

18

Nr. 30 / 07 vom 27. Juni 2007 fr die deutsche Sprachprfung  

E-Print Network (OSTI)

1 Nr. 30 / 07 vom 27. Juni 2007 Ordnung für die deutsche Sprachprüfung für den Hochschulzugang an der Universität Paderborn Vom 27. Juni 2007 #12;2 Ordnung für die Deutsche Sprachprüfung für den besitzen. Dieser Nachweis kann gemä? § 2 Nr. 1 in Verbindung mit § 6 der ,,Rahmenordnung über deutsche

Hellebrand, Sybille

19

Document Nr. AE-ES -VHAMP_v1.0  

E-Print Network (OSTI)

Document Nr. AE-ES -VHAMP_v1.0 Date: 5 September, 2013 Doc. Title: VHAMP ­ Vertical and Horizontal/SMHI: Linda Megner and Heiner Körnich #12;Document Nr. AE-ES -VHAMP_v1.0 Date: 5 September, 2013 Doc. Title. The main conclusion from the study are 1. Along track integration of 85-100 km is needed to meet

Marseille, Gert-Jan

20

Gunther Cornelissen Turks fruit der natuurkunde NAW 5/6 nr. 4 december 2005 317 Gunther Cornelissen  

E-Print Network (OSTI)

Gunther Cornelissen Turks fruit der natuurkunde NAW 5/6 nr. 4 december 2005 317 Gunther Cornelissen Requiem voor Newton Turks fruit der natuurkunde Van mathematisch fysicus Klaas Landsman is deze zomer het in de hoofdrol. #12;318 NAW 5/6 nr. 4 december 2005 Turks fruit der natuurkunde Gunther Cornelissen

Cornelissen, Gunther

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

The tomato ethylene receptors NR and LeETR4 are negative regulators of ethylene response and exhibit  

E-Print Network (OSTI)

The tomato ethylene receptors NR and LeETR4 are negative regulators of ethylene response, 2000 (received for review December 16, 1999) The plant hormone ethylene is involved in many a family of ethylene receptors, desig- nated LeETR1, LeETR2, NR, LeETR4, and LeETR5, with homology

Klee, Harry J.

22

ETH TIK-NR. 118, JULY 2001 1 A Spectral Analysis of the Internet Topology  

E-Print Network (OSTI)

. Finally, a good understanding of the Internet topology can lead to improvements in network topologyETH TIK-NR. 118, JULY 2001 1 A Spectral Analysis of the Internet Topology Danica Vukadinovi´c, Polly Huang, Thomas Erlebach Abstract-- In this paper we investigate properties of the Internet topology

Huang, Polly

23

Nr. 187 / 2010 // 21. September 2011 Uni Live erleben Tage der Chemie im Rotmain-Center  

E-Print Network (OSTI)

Nr. 187 / 2010 // 21. September 2011 Uni Live erleben ­ Tage der Chemie im Rotmain und der Physikalischen Chemie, der Biomaterialien und der Ingenieurwissenschaften werden beweisen, dass Chemie nicht nur Spass macht. Sondern Teil des alltäglichen Lebens ist. Experimente zum mitmachen

Ullmann, G. Matthias

24

nr 1/2012 tom 66 7 One more function for microbial fuel cells in treating  

E-Print Network (OSTI)

science nr 1/2012 · tom 66 · 7 One more function for microbial fuel cells in treating wastewater production, and water recovery. Microbial fuel cells (MFCs) have gained significant attention because of their integrated wastewater treatment and bioenergy production. MFCs are bio-electrochemical reactors in which

25

Concepts in GIS NR 505 Fall 2010 Department of Forestry, Rangelands, and Watershed Stewardship  

E-Print Network (OSTI)

1 Concepts in GIS NR 505 Fall 2010 Department of Forestry, Rangelands, and Watershed Stewardship is designed to introduce graduate students to concepts in geographic information systems (GIS). The purpose of the course is threefold, to: 1) Examine the broad research context in which GIS is adopted and used through

Boone, Randall B.

26

The Orphan Nuclear Receptor NR4A1 (Nur77) Regulates Oxidative and Endoplasmic Reticulum Stress in Pancreatic Cancer Cells  

Science Journals Connector (OSTI)

...Diagnostic and therapeutic potential of nuclear receptor expression in lung cancer Yangsik...biomarkers and new therapeutic targets. Nuclear receptors are druggable targets due to...using publicly available microarray datasets, we found that the NR signature has a...

Syng-Ook Lee; Un-Ho Jin; Jeong Han Kang; Sang Bae Kim; Aaron S. Guthrie; Sandeep Sreevalsan; Ju-Seog Lee; and Stephen Safe

2014-04-01T23:59:59.000Z

27

[)r PAR1 rMF.Nr o Dr (.FIrMr( A .IF]CNC)I,OGIi,  

E-Print Network (OSTI)

[)r PAR1 rMF.Nr o Dr (.FIrMr( A E .IF]CNC)I,OGIi, f)?]I I-ARMACo @ ;^.*r.l-EN,.m BANDO Dl SELEZIONE

Guidoni, Leonardo

28

Effects of nanoclay and short nylon fiber on morphology and mechanical properties of nanocomposites based on NR/SBR  

Science Journals Connector (OSTI)

Natural rubber and styrene butadiene rubber (NR/SBR) reinforced with both short nylon fibers and nanoclay (Cloisite 15A) nanocomposites were prepared in ... effects of fiber loading and different loading of nanoclay

Mohammad Andideh; Ghasem Naderi; Mir Hamid Reza Ghoreishy

2014-04-01T23:59:59.000Z

29

Nr. 03 / 13 vom 31. Januar 2013 Ordnung fr die Deutsche Sprachprfung  

E-Print Network (OSTI)

Nr. 03 / 13 vom 31. Januar 2013 Ordnung für die Deutsche Sprachprüfung für den Hochschulzugang an der Universität Paderborn Vom 31. Januar 2013 #12;2 Ordnung für die Deutsche Sprachprüfung für den Hochschulrahmengesetz (HRG) und in den Hochschulgesetzen der Länder für die Aufnahme des Studiums hinreichende deutsche

Hellebrand, Sybille

30

100-NR-2 Apatite Treatability Test FY09 Status: High Concentration Calcium-Citrate-Phosphate Solution Injection for In Situ Strontium-90 Immobilization  

SciTech Connect

100-NR-2 Apatite Treatability Test FY09 Status: High Concentration Calcium-Citrate-Phosphate Solution Injection for In Situ Strontium-90 Immobilization INTERIM LETTER REPORT

Vermeul, Vincent R.; Fritz, Brad G.; Fruchter, Jonathan S.; Szecsody, James E.; Williams, Mark D.

2009-12-16T23:59:59.000Z

31

Pacific Northwest National Laboratory Apatite Investigation at the 100-NR-2 Quality Assurance Project Plan  

SciTech Connect

This Quality Assurance Project Plan provides the quality assurance requirements and processes that will be followed by staff working on the 100-NR-2 Apatite Project. The U.S. Department of Energy, Fluor Hanford, Inc., Pacific Northwest National Laboratory, and the Washington Department of Ecology agreed that the long-term strategy for groundwater remediation at 100-N would include apatite sequestration as the primary treatment, followed by a secondary treatment. The scope of this project covers the technical support needed before, during, and after treatment of the targeted subsurface environment using a new high-concentration formulation.

Fix, N. J.

2008-03-28T23:59:59.000Z

32

Nr. 077 / 2014 // 6. Mai 2014 Prof. Ngugi wa Thiong'o whrend seiner Rede zur Annahme der Ehrendoktorwrde  

E-Print Network (OSTI)

Nr. 077 / 2014 // 6. Mai 2014 1/5 Prof. Ngugi wa Thiong'o während seiner Rede zur Annahme der der afrikanischen Partneruniversitäten im Netzwerk der BIGSAS würden den Geehrten begleiten. Die Rede

Ullmann, G. Matthias

33

Supplement to Chimica Oggi/CHEMISTRY TODAY Vol 25 nr 6 Green Chemistry/Ionic liquids Aquatic toxicity and biodegradation  

E-Print Network (OSTI)

Supplement to Chimica Oggi/CHEMISTRY TODAY · Vol 25 nr 6 · Green Chemistry/Ionic liquids 32 Aquatic these are two important aspects of green chemistry, yet data are limited compared to the vast literature on IL currently used volatile solvents (Table 3). However, standard bioassays typically do not mimic

Bernot, Randall

34

PNNL Apatite Investigation at 100-NR-2 Quality Assurance Project Plan  

SciTech Connect

In 2004, the U.S. Department of Energy, Fluor Hanford, Inc., Pacific Northwest National Laboratory (PNNL), and the Washington Department of Ecology agreed that the long-term strategy for groundwater remediation at the 100-N Area would include apatite sequestration as the primary treatment, followed by a secondary treatment if necessary. Since then, the agencies have worked together to agree on which apatite sequestration technology has the greatest chance of reducing strontium-90 flux to the Columbia River. This Quality Assurance Project Plan provides the quality assurance requirements and processes that will be followed by staff working on the PNNL Apatite Investigation at 100-NR-2 Project. The plan is designed to be used exclusively by project staff.

Fix, N. J.

2009-04-02T23:59:59.000Z

35

Upregulation of the orphan nuclear receptor NR4A3 in drug-induced apoptosis of tumor cells and its relationship to mitochondrial VDAC1  

Science Journals Connector (OSTI)

...Abstract 2296: Identification of novel nuclear receptor targets in estrogen receptor...subtype. Aims and Methods: To identify nuclear receptor (NR) targets, we did microarray...using previously published breast cancer datasets. Results and Conclusion: The 41 NRs...

Kala Ramaseshan; Patrick Tan; and Shazib Pervaiz

2007-05-01T23:59:59.000Z

36

Lawrence Livermore: News and Public Affairs: News and Media: NR-04-02-01  

NLE Websites -- All DOE Office Websites (Extended Search)

Social Media Logos Follow LLNL on YouTube Subscribe to LLNL's RSS feed Follow LLNL on Facebook Follow LLNL on Twitter Follow LLNL on Flickr Social Media Logos Follow LLNL on YouTube Subscribe to LLNL's RSS feed Follow LLNL on Facebook Follow LLNL on Twitter Follow LLNL on Flickr Contact: Anne M. Stark Phone:(925) 422-9799 E-mail: stark8@llnl.gov FOR IMMEDIATE RELEASE Date: February 2, 2004 NR-04-02-01 Livermore Scientists Team With Russia To Discover Elements 113 and 115 A calcium-48 ion is accelerated to a high velocity in a cyclotron and directed at an americium-243 target. (300 dpi) One of the numerous americium-243 target atoms with a nucleus of protons and neutrons surrounded by an electron cloud. (300 dpi) An accelerated calcium-48 ion and an americium-243 target atom just before they collide. (300 dpi) The moment of collision between an accelerated calcium-48 ion and an americium-243 target atom.

37

Bisphenol-A rapidly promotes dynamic changes in hippocampal dendritic morphology through estrogen receptor-mediated pathway by concomitant phosphorylation of NMDA receptor subunit NR2B  

SciTech Connect

Bisphenol-A (BPA) is known to be a potent endocrine disrupter. Evidence is emerging that estrogen exerts a rapid influence on hippocampal synaptic plasticity and the dendritic spine density, which requires activation of NMDA receptors. In the present study, we investigated the effects of BPA (ranging from 1 to 1000 nM), focusing on the rapid dynamic changes in dendritic filopodia and the expressions of estrogen receptor (ER) {beta} and NMDA receptor, as well as the phosphorylation of NMDA receptor subunit NR2B in the cultured hippocampal neurons. A specific ER antagonist ICI 182,780 was used to examine the potential involvement of ERs. The results demonstrated that exposure to BPA (ranging from 10 to 1000 nM) for 30 min rapidly enhanced the motility and the density of dendritic filopodia in the cultured hippocampal neurons, as well as the phosphorylation of NR2B (pNR2B), though the expressions of NMDA receptor subunits NR1, NR2B, and ER{beta} were not changed. The antagonist of ERs completely inhibited the BPA-induced increases in the filopodial motility and the number of filopodia extending from dendrites. The increased pNR2B induced by BPA (100 nM) was also completely eliminated. Furthermore, BPA attenuated the effects of 17{beta}-estradiol (17{beta}-E{sub 2}) on the dendritic filopodia outgrowth and the expression of pNR2B when BPA was co-treated with 17{beta}-E{sub 2}. The present results suggest that BPA, like 17{beta}-E{sub 2}, rapidly results in the enhanced motility and density of dendritic filopodia in the cultured hippocampal neurons with the concomitant activation of NMDA receptor subunit NR2B via an ER-mediated signaling pathway. Meanwhile, BPA suppressed the enhancement effects of 17{beta}-E{sub 2} when it coexists with 17{beta}-E{sub 2}. These results provided important evidence suggesting the neurotoxicity of the low levels of BPA during the early postnatal development of the brain.

Xu Xiaohong, E-mail: xuxh63@zjnu.cn; Ye Yinping; Li Tao; Chen Lei; Tian Dong; Luo Qingqing; Lu Mei

2010-12-01T23:59:59.000Z

38

Standort Treibstoff Abteilung Inverkehrssetzung Verantwortlich E-Mail Telefon Einstellhalle Chemie Nr. 95 Benzin Synkologie 01.11.2000 Alexander Strauss alex.strauss@iee.unibe.ch 031 631 3035  

E-Print Network (OSTI)

Chemie Nr. 95 Benzin Synökologie 01.11.2000 Alexander Strauss alex.strauss@iee.unibe.ch 031 631 3035 3035 Einstellhalle Chemie Nr. 92 Diesel Evolutionsökologie 8.02 Eduard Jutzi eduard.wymann@iee.unibe.ch 031 631 9135 Einstellhalle Chemie ? Populationsgenetik ?? 13.9.05 Susanne Tellenbach susanne

Richner, Heinz

39

CP755, ISIS: International Symposium on Interdisciplinary Science edited by A. Ludu, N.R. Hutchings and D.R.Fry  

E-Print Network (OSTI)

CP755, ISIS: International Symposium on Interdisciplinary Science edited by A. Ludu, N.R. Hutchings (CP) assembly. Interactions between doublet-associated radial spokes and CP projections are thought modulate dynein activity. To better understand CP control mechanisms, we determined the three

Mitchell, David

40

Phytoestrogen Exposure Is Associated with Circulating Sex Hormone Levels in Postmenopausal Women and Interact with ESR1 and NR1I2 Gene Variants  

Science Journals Connector (OSTI)

...Interact with ESR1 and NR1I2 Gene Variants Yen-Ling Low 1 Alison M. Dunning 2 Mitch Dowsett 3 Elizabeth Folkerd 3 Deborah Doody...csg/abecasis/GOLD/ was used to create a summary of pair-wise linkage disequilibrium patterns on the National Institute of...

Yen-Ling Low; Alison M. Dunning; Mitch Dowsett; Elizabeth Folkerd; Deborah Doody; James Taylor; Amit Bhaniani; Robert Luben; Kay-Tee Khaw; Nick J. Wareham; and Sheila A. Bingham

2007-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Annual Summary Report Calendar Year 2000 for the 100-HR-3, 100-KR-4, and 100-NR-2 Operable Units and Pump-and-Treat Operations  

SciTech Connect

This annual progress and performance evaluation report discusses the groundwater remedial actions in the 100 Area, including the interim actions at the 100-HR-3 and 100-KR-4 Operable Units, and also discusses the expedited response action in the 100-NR-2 operable unit.

G. B. Mitchem

2001-08-22T23:59:59.000Z

42

Moneyfacts Group plc, Moneyfacts House, 66 -70 Thorpe Road, Norwich. NR1 1BJ. Telephone: 0870 2250 476 Fax: 0870 2250 201 email: pressoffice@moneyfacts.co.uk  

E-Print Network (OSTI)

Moneyfacts Group plc, Moneyfacts House, 66 - 70 Thorpe Road, Norwich. NR1 1BJ. Telephone: 0870 2250 points such as half or quarter points, for example at 4%, 4.5% or 4.75%. #12;Moneyfacts Group plc 15 20 25 30 35 40 45 50 Basis Points Frequency #12;Moneyfacts Group plc, Moneyfacts House, 66 - 70

Feigon, Brooke

43

Fracture Testing of a Self-Healing Polymer Composite by E.N. Brown, N.R. Sottos and S.R. White  

E-Print Network (OSTI)

Fracture Testing of a Self-Healing Polymer Composite by E.N. Brown, N.R. Sottos and S.R. White with an embedded catalyst. The effects of size and concentration of the catalyst and mi- crocapsules on fracture as much as 90 percent of its virgin fracture toughness. KEY WORDS--Self-healing, autonomic healing

Sottos, Nancy R.

44

Nick Ovenden, Vivi Rottschfer A greenhouse growth model for unselfish roses NAW 5/3 nr. 4 december 2002 313 Nick Ovenden  

E-Print Network (OSTI)

), the relative hu- midity RH , the temperature in the greenhouse Ta, and the overall light intensity I0. We began its age a, the greenhouse temperature, humidity and CO2 concentration, as well as the amount of lightNick Ovenden, Vivi Rottschäfer A greenhouse growth model for unselfish roses NAW 5/3 nr. 4 december

Rottschäfer, Vivi

45

E&nr Ph. S. W.. Wahhgt~n. D.C. 200242174, TIkpbnc (202) 48a60uo  

Office of Legacy Management (LM)

75' 75' 00.955 L' E&nr Ph. S. W.. Wahhgt~n. D.C. 200242174, TIkpbnc (202) 48a60uo 7117-03.87.cdy.43 23 September 1987 CR CA.d M r. Andrew Wallo, III, NE-23 Division of Facility & Site Decoaunissioning Projects U.S. Department of Energy Germantown, Maryland 20545 Dear M r. Wallo: ELIMINATION RECOMMENDATION -- COLLEGES AND UNIVERSITIES M /4.0-03 kl 77.0% I - The attached elimination reconunendation was prepared in accordance rlL.0~ with your suggestion during our meeting on 22 September. The recommendation flO.o-02 includes 26 colleges and universities identified.in Enclosure 4 to Aerospace letter subject: Status of Actions - FUSRAP Site List, dated N0.03. 27 May 1987; three institutions (Tufts College, University of Virginia, rJCDCJ/ and the University of Washington) currently identified on the FUSRAP

46

PPAR?-dependent induction of the energy homeostasis-regulating nuclear receptor \\{NR1i3\\} (CAR) in rat hepatocytes: Potential role in starvation adaptation  

Science Journals Connector (OSTI)

A tight hormonal control of energy homeostasis is of pivotal relevance for animals. Recent evidence suggests an involvement of the nuclear receptor \\{NR1i3\\} (CAR). Fasting induces CAR by largely unknown mechanisms and CAR-deficient mice are defective in fasting adaptation. In rat hepatocytes CAR was induced by WY14643, a PPAR?-agonist. A DR1 motif in the CAR promoter was necessary and sufficient for this control. The PPAR?-dependent increase in CAR potentiated the phenobarbital-induced transcription of the prototypical CAR-dependent gene CYP2B1. Since free fatty acids are natural ligands for PPAR?, a fasting-induced increase in free fatty acids might induce CAR. In accordance with this hypothesis, CAR induction by fasting was abrogated in PPAR?-deficient mice.

Nadine Wieneke; Karen I. Hirsch-Ernst; Manuela Kuna; Sander Kersten; Gerhard P. Pschel

2007-01-01T23:59:59.000Z

47

Serum- and glucocorticoid-regulated kinase 1 (SGK1) induction by the EWS/NOR1(NR4A3) fusion protein  

SciTech Connect

The NR4A3 nuclear receptor (also known as NOR1) is involved in tumorigenesis by the t(9;22) chromosome translocation encoding the EWS/NOR1 fusion protein found in approximately 75% of all cases of extraskeletal myxoid chondrosarcomas (EMC). Several observations suggest that one role of EWS/NOR1 in tumorigenesis may be to deregulate the expression of specific target genes. We have shown previously that constitutive expression of EWS/NOR1 in CFK2 fetal rat chondrogenic cells induces their transformation as measured by growth beyond confluency and growth in soft agar. To identify genes regulated by the fusion protein in this model, we have generated a CFK2 cell line in which the expression of EWS/NOR1 is controlled by tetracycline. Using the differential display technique, we have identified the serum- and glucocorticoid-regulated kinase 1 (SGK1) mRNA as being up-regulated in the presence of EWS/NOR1. Co-immunocytochemistry confirmed over-expression of the SGK1 protein in cells expressing EWS/NOR1. Significantly, immunohistochemistry of 10 EMC tumors positive for EWS/NOR1 showed that all of them over-express the SGK1 protein in contrast to non-neoplastic cells in the same biopsies and various other sarcoma types. These results strongly suggest that SGK1 may be a genuine in vivo target of EWS/NOR1 in EMC.

Poulin, Hugo [Human and Molecular Genetic Research Unit, Saint-Francois d'Assise Hospital, CHUQ, Que., G1L 3L5 (Canada); Laval University Faculty of Medicine, Que., G1K 7P4 (Canada); Filion, Christine [Human and Molecular Genetic Research Unit, Saint-Francois d'Assise Hospital, CHUQ, Que., G1L 3L5 (Canada); Ladanyi, Marc [Department of Pathology, Memorial Sloan-Kettering Cancer Center, NY 10021 (United States); Labelle, Yves [Human and Molecular Genetic Research Unit, Saint-Francois d'Assise Hospital, CHUQ, Que., G1L 3L5 (Canada) and Laval University Faculty of Medicine, Que., G1K 7P4 (Canada)]. E-mail: yves.labelle@bcx.ulaval.ca

2006-07-21T23:59:59.000Z

48

Interim Report: 100-NR-2 Apatite Treatability Test: Low Concentration Calcium Citrate-Phosphate Solution Injection for In Situ Strontium-90 Immobilization  

SciTech Connect

Following an evaluation of potential Sr-90 treatment technologies and their applicability under 100-NR-2 hydrogeologic conditions, U.S. Department of Energy, Fluor Hanford, Inc., Pacific Northwest National Laboratory, and the Washington Department of Ecology agreed that the long-term strategy for groundwater remediation at 100-N Area will include apatite sequestration as the primary treatment, followed by a secondary treatment if necessary (most likely phytoremediation). Since then, the agencies have worked together to agree on which apatite sequestration technology has the greatest chance of reducing Sr-90 flux to the river at a reasonable cost. In July 2005, aqueous injection, (i.e., the introduction of apatite-forming chemicals into the subsurface) was endorsed as the interim remedy and selected for field testing. Studies are in progress to assess the efficacy of in situ apatite formation by aqueous solution injection to address both the vadose zone and the shallow aquifer along the 300 ft of shoreline where Sr-90 concentrations are highest. This report describes the field testing of the shallow aquifer treatment.

Williams, Mark D.; Fritz, Brad G.; Mendoza, Donaldo P.; Rockhold, Mark L.; Thorne, Paul D.; Xie, YuLong; Bjornstad, Bruce N.; Mackley, Rob D.; Newcomer, Darrell R.; Szecsody, James E.; Vermeul, Vincent R.

2008-07-11T23:59:59.000Z

49

Neutron Diffraction Studies of a Class A beta-Lactamase Toho-1 E166A/R274N/R276N Triple Mutant  

SciTech Connect

beta-Lactam antibiotics have been used effectively over several decades against many types of bacterial infectious diseases. However, the most common cause of resistance to the beta-lactam antibiotics is the production of beta-lactamase enzymes that inactivate beta-lactams by rapidly hydrolyzing the amide group of the beta-lactam ring. Specifically, the class A extended-spectrum beta-lactamases (ESBLs) and inhibitor-resistant enzymes arose that were capable of hydrolyzing penicillins and the expanded-spectrum cephalosporins and monobactams in resistant bacteria, which lead to treatment problems in many clinical settings. A more complete understanding of the mechanism of catalysis of these ESBL enzymes will impact current antibiotic drug discovery efforts. Here, we describe the neutron structure of the class A, CTX-M-type ESBL Toho-1 E166A/R274N/R276N triple mutant in its apo form, which is the first reported neutron structure of a beta-lactamase enzyme. This neutron structure clearly reveals the active-site protonation states and hydrogen-bonding network of the apo Toho-1 ESBL prior to substrate binding and subsequent acylation. The protonation states of the active-site residues Ser70, Lys73, Ser130, and Lys234 in this neutron structure are consistent with the prediction of a proton transfer pathway from Lys73 to Ser130 that is likely dependent on the conformation of Lys73, which has been hypothesized to be coupled to the protonation state of Glu166 during the acylation reaction. Thus, this neutron structure is in agreement with a proposed mechanism for acylation that identifies Glu166 as the general base for catalysis.

Blakeley, Matthew P. [Institut Laue-Langevin (ILL); Chen, Yu [ORNL; Afonine, Pavel [Lawrence Berkeley National Laboratory (LBNL)

2010-01-01T23:59:59.000Z

50

EKSAMENSPROJEKT NR. ones(1,ymax)  

E-Print Network (OSTI)

. It is investigated how to use a novel algorithm for aligning prognosis of wind-speed to observed energy produce denne afhandling foreslås en robust fejljustering af prognoser for vind- styrke, og denne justering

51

908 Amtsblatt der Freien Hansestadt Bremen vom 2 . August 2011 Nr . 83 men sind . Es muss sichergestellt werden, dass die elek-  

E-Print Network (OSTI)

archivieren . Fachspezifische Prüfungsordnung für das Fach ,,Chemie" im Zwei-Fächer-Bachelorstudium der Fach ,,Chemie" ge- schrieben, wird aufgrund der bestandenen Bachelor- prüfung der Abschlussgrad . § 2 Studienaufbau, Module und Leistungspunkte (1) Das Fach ,,Chemie" wird als Zwei

Hoffmeister, Thomas S.

52

Microsoft Word - NR EMRL ribbon.docx  

NLE Websites -- All DOE Office Websites (Extended Search)

Media Contact: Will Callicott Media Contact: Will Callicott (803) 725-3786 will.callicott@srnl.doe.gov AIKEN COUNTY, SRNS COLLABORATE TO EXPAND NATIONAL LABORATORY SPACE AIKEN, SC (November 4, 2013) - Savannah River National Laboratory (SRNL) researchers are now occupying 6,435 square feet of new, modern laboratory and support space at Aiken County's Applied Research Center (ARC), located in the Savannah River Research Campus adjacent to the Savannah River Site. The new space is an expansion of the facility, which houses SRNL's 24,000 square-foot Hydrogen Technology Research Laboratory, which is used primarily for unclassified research into new gas processing, storage and transfer applications. The county-owned facility, which opened in 2006, also hosts USC-Aiken research

53

LANSCE | Lujan Center | Highlights | Neutron Reflectometry (NR...  

NLE Websites -- All DOE Office Websites (Extended Search)

of the crystallinity of the sample (single crystal, polycrystalline, or amorphous). Neutron scattering is a unique tool to study such nanolayered composites because the...

54

Summary of NR Program Prometheus Efforts  

SciTech Connect

The Naval Reactors Program led work on the development of a reactor plant system for the Prometheus space reactor program. The work centered on a 200 kWe electric reactor plant with a 15-20 year mission applicable to nuclear electric propulsion (NEP). After a review of all reactor and energy conversion alternatives, a direct gas Brayton reactor plant was selected for further development. The work performed subsequent to this selection included preliminary nuclear reactor and reactor plant design, development of instrumentation and control techniques, modeling reactor plant operational features, development and testing of core and plant material options, and development of an overall project plan. Prior to restructuring of the program, substantial progress had been made on defining reference plant operating conditions, defining reactor mechanical, thermal and nuclear performance, understanding the capabilities and uncertainties provided by material alternatives, and planning non-nuclear and nuclear system testing. The mission requirements for the envisioned NEP missions cannot be accommodated with existing reactor technologies. Therefore concurrent design, development and testing would be needed to deliver a functional reactor system. Fuel and material performance beyond the current state of the art is needed. There is very little national infrastructure available for fast reactor nuclear testing and associated materials development and testing. Surface mission requirements may be different enough to warrant different reactor design approaches and development of a generic multi-purpose reactor requires substantial sacrifice in performance capability for each mission.

Ashcroft, John [Space Energy Conversion, Lockheed Martin KAPL Inc. (United States); Eshelman, Curtis [Space Reactor Engineering, Bechtel Bettis Inc. (United States)

2007-01-30T23:59:59.000Z

55

NR Pu SEIS Advisory 07272012_Clean  

NLE Websites -- All DOE Office Websites (Extended Search)

disposition o f 7 .1 m etric t ons ( MT) o f a dditional w eapons---usable p lutonium f rom p its t hat w ere declared s urplus t o n ational d efense n eeds i n 2 007 but w ere n...

56

Nr vi planlgger den fremtidige udvikling  

E-Print Network (OSTI)

begyndelsen af det 21. århundrede, mens naturgas og vedvaren- de energi kommer til at stå for en stigende del energiformer som sol, vind og bioenergi i kombination med ener- gilagring, se side 6, kan indpasses i energifor

57

UNIVERSITY OF CALIFORNIA, SAN DIEGO UCSD BERKELEY DAVIS IRVINE LOS ANGELES MERCED RIVERSIDE SAN DIEGO SAN FRANCISCO SANTA BARBARA SANTA CRUZ  

E-Print Network (OSTI)

*** M MI GE E N/R PR R M MI GE E N/R PR R M MI GE E N/R PR R SUMMER SESSION II by Advisors *** M MI GE E N/R PR R M MI GE E N/R PR R M MI GE E N/R PR R SPECIAL SESSION by Advisors *** M MI GE E N/R PR R M MI GE E N/R PR R M MI GE E N/R PR R M=Major MI

Russell, Lynn

58

UNIVERSITY OF CALIFORNIA, SAN DIEGO UCSD BERKELEY DAVIS IRVINE LOS ANGELES MERCED RIVERSIDE SAN DIEGO SAN FRANCISCO SANTA BARBARA SANTA CRUZ  

E-Print Network (OSTI)

is to be completed by Advisors *** M MI GE E N/R PR R M MI GE E N/R PR R M MI GE E N/R PR R M MI GE E N/R PR R M MI GE E N/R PR R M MI GE E N/R PR R M=Major MI=Minor GE

Russell, Lynn

59

NR Hanford OCMED Awd4 June 8 2012.docx  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Management Consolidated Business Center Management Consolidated Business Center 250 E. 5 th Street, Suite 500, Cincinnati, Ohio 45202 Media Contact: June 8, 2012 Cameron Hardy/ 509-308-4947 Cameron.hardy@rl.gov DOE Awards Hanford Site Occupational Medical Services Contract Cincinnati - The U.S. Department of Energy (DOE) announced today that HPM Corporation, of Kennewick, Washington has been awarded an estimated $99 million contract to provide Occupational

60

NR-WFR Plan for Comment July 8 2013.docx  

NLE Websites -- All DOE Office Websites (Extended Search)

Monday, July 8, 2013 Monday, July 8, 2013 Bill Taylor - 803-952-8564 bill.taylor@srs.gov Public Comment Sought for Savannah River Site Workforce Restructuring Plan AIKEN, SC -- The Department of Energy Savannah River Site (DOE-SR) has posted a draft workforce restructuring plan for public comment. The draft workforce restructuring plan, prepared under Section 3161 of the National Defense Authorization Act, is designed to mitigate

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While these samples are representative of the content of NLEBeta,
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61

NR Pu SEIS Advisory 07152010 _final_.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

SRS: Jim Giusti, (803) 952-7697 Thursday, July 15, 2010 SRS: Jim Giusti, (803) 952-7697 Thursday, July 15, 2010 james-r.giusti@srs.gov CBO: Deb Gill, (575) 234-7270 deg.gill@wipp.ws TVA: Terry Johnson, (423) 751-6875 twjohnson@tva.gov DOE Announces Modification of Supplemental Environmental Study on Plutonium Disposition WASHINGTON, DC -- The U.S. Department of Energy's (DOE) National Nuclear Security Administration is announcing its intent to modify the scope of the ongoing Surplus Plutonium

62

Microsoft Word - DE-NR0000031-FY11.doc  

National Nuclear Security Administration (NNSA)

.~._-_._.-_._.._----------------------- .~._-_._.-_._.._----------------------- AMENDMENT OF SOLICITATlON/MOOlFICATlON OF CONTRACT II. CONTRACT 10 CODE IPAGE~S 1 I 192 2. AMENDMENTIMODlFICATIONNO. 3. EFFECTIVE DATE 4. REQUISInONlPtJRCHASE REQ. NO. r PROJECT NO. (If~") 032 See Block 16C 6. ISSUED BY CODE 01111 7. ADMINISTEREDBY (lfotllerlMnltem 6) CODE T01111 NRLFO - PGH NRLFO - PGH US DEPARTMENT OF ENERGY US DEPARTMENT OF ENERGY NAVAL REACTORS LABORATORY FIELD OFFICE - PGH NAVAL REACTORS LABORATORY FIELD OFF POBOX 109 POBOX 109 WEST MIFFLIN PA 15122-0109 WEST MIFFLIN PA 15122-0109 6. NAMEAND "'DDRESS OF CONTRACTOR /NO *. _, ** _. _ rtd ZIPCodo} ~ 9***.AMENDMENTOF SOLICIT"'TION NO. BECHTEL MARINE PROPULSION CORPORATION ATTN JOHN E POTTS 98. O"'TED (SEE ITEM 11) 50 BEALE ST SAN FRANCISCO CA 941051813 lOA. MODIFICATIONOF CONTR"'CTIORDER NO. X DE-NROOOO031 lOB. D"'TED (SEE ITEM 13)

63

Microsoft Word - DE-NR0000031-001.rtf  

National Nuclear Security Administration (NNSA)

SDLlCITATIDNIMDDIFICATIDN SDLlCITATIDNIMDDIFICATIDN OF CONTRACT 1:.CONTRACTID CODE IPAGE OF PAGES DE-N ROOOOO31 1 I 27 2. AMENDMENT/MODIFICATION NO. 3. EFFECTIVE DATE 4. REQUISmONJPURCHASE REQ. NO. I 5. PROJECT NO. (If applicable) 001 Same as Block l6C NlA 6. ISSUED BY CODE 7. ADMINISTERED BY (If other than Item 6) Code I U.S. Department of Energy Pittsburgh Naval Reactors Office P.O. Box 109 West Mifflin, PA 15122-0109 8. NAME AND ADDRESS OF CONTRACTOR (No. street, county, State end ZIP Code) J1... 9A. AMENDMENT OF SOLICITATION NO. Bechtel Marine Propulsion Corporation 9.B. OATED (SEE ITEM /1) 50 Beale Street San Francisco, CA 94105-1895 IDA. MODIRCATION OF Contracl/Order NO. ./ DE-NROOOOO31 10.B. OATED (SEE ITEM 13) CODE NlA I FACILITY CODE NlA Seotember 18 2008 /1. THIS ITEM ONLY APPLIES TO AMENDMENTS OF SOLICITATIONS o The above numbered solidtatfon Is amended as set forth In Item 14. The hour and date specified

64

Working Papers / Documents de travail WP 2014 -Nr 21  

E-Print Network (OSTI)

& EHESS May 2014 Abstract This article examines the volatility dependence between the crude oil price invoicing currency of international crude oil trading, it is well established that the oil prices and USD between crude oil prices and USD exchange rates has important implications on both the real economy

Paris-Sud XI, Université de

65

Nr. 217 / 2013 // 22. Juli 2013 7.180 Zeichen  

E-Print Network (OSTI)

: Neue Lichtenberg-Professur für die Universität Bayreuth Den Transport von Wärme mit nanostrukturierten Funktionsmaterialien zu steuern Die Frage, wie sich der Fluss von Wärme gezielt steuern lässt, ist bisher ungelöst stünde, das den Transport von Wärme nach dem Einbahnstra?en-Prinzip nur in eine Richtung zulässt, in die

Ott, Albrecht

66

Privatarkiv nr. Tek 20 Einar Sem-Jacobsen, 1878-  

E-Print Network (OSTI)

Frankrike for å få sin flygerutdannelse. Da de kom tilbake til Norge, hadde de med seg to Farman fly, "Njål

Malinnikova, Eugenia

67

Working Papers / Documents de travail WP 2014 -Nr 03  

E-Print Network (OSTI)

' response to the 2004 reform of the immigration law, which made it harder for foreigners to obtain resident status. The strategy for identication exploits a discontinuity in exposure to the reform, determined by the time of entry. The rst result is that the 2004 reform prompted a wave of departures among low

Boyer, Edmond

68

Hanford Site - 100-NR-2 | Department of Energy  

Office of Environmental Management (EM)

177 Yes 100 (DWS); 48 (MTCA) Cr-6 159 Yes 48 (MTCA); 10 (AWQC) As 50.1 Yes 10 (DWS) Isotope Name Concentration (pCil) Regulatory Driver Cleanup Requirement Gross Beta 24000 No...

69

30teknisk nyt nr. 5 -2005 Milj og energi  

E-Print Network (OSTI)

som både frem- stiller elektricitet og varme. Hvis du ikke bruger al elektriciteten selv, sendes den

70

EINBLICKE Nr. 47 / Frhjahr 2008 Carl von Ossietzky Universitt Oldenburg  

E-Print Network (OSTI)

understanding of the physical effects in the small-scale polycrystalline structures of new solar-cell materials

Oldenburg, Carl von Ossietzky Universität

71

NR WIPP Transportation Award Jan 9 2012f.docx  

NLE Websites -- All DOE Office Websites (Extended Search)

of Energy (DOE) today awarded two small-business contracts to CAST Specialty Transportation, Inc. and Visionary Solutions, LLC, to provide trucking services to transport...

72

Energistyrelsen, EFP j. nr. 33032-0061 Fjernvarmedrevne  

E-Print Network (OSTI)

to improve the use of dis- trict heating used as driving energy in an adsorption heat pump. This can take machine. This will heat the borehole storage (regenerate it) and it is ready to use as heat pump free heat from borehole storage to heat the building. By this the borehole stor- age is cooled and can

73

Nr. 282 / 2010 // 1. Oktober 2010 Das Energieproblem lsen  

E-Print Network (OSTI)

betriebenen Verbrennungsmotor. Siemens sieht das E-Auto als Bestandteil eines völlig neuartigen Konzepts

Ullmann, G. Matthias

74

Working Papers / Documents de travail WP 2013 -Nr 44  

E-Print Network (OSTI)

This paper attempts to analyze the relationships between the ASEAN-5 countries' business cycles. We examine and reces- sion phases among the ASEAN-5 are correlated) and global spillovers where the business cycles the ASEAN-5. We employ a time-varying transition probability Markov switching framework in order to allow

Boyer, Edmond

75

Working Papers / Documents de travail WP 2012 -Nr 29  

E-Print Network (OSTI)

the long-run relationship of real exchanges rates (RERs) among the ASEAN-5 countries by testing the theory-groups of the ASEAN-5 countries as they share long-run comovements with each others. However, a full-fledged monetary union embracing all ASEAN-5 members is still lim- ited from the perspective of the G-PPP theory

Paris-Sud XI, Université de

76

Nr. 52 / 2013 // 15. Mrz 2013 5.446 Zeichen  

E-Print Network (OSTI)

Unvermischbarkeit von Wasser und Wasserstoff in Fluiden des Erdmantels ­ und rehabilitieren zugleich eine alte Wasserstoff in Fluiden des Erdmantels getrennt vor- kommen können. Sie führen die Oxidation des Erdmantels Wasserstoff freigesetzt wurden. Die Forschungsergebnisse sind für die Frage nach der Entstehung des Lebens von

Ullmann, G. Matthias

77

Nr. 035 / 2014 // 25. Februar 2014 4.979 Zeichen  

E-Print Network (OSTI)

Adenosintriphosphat (ATP) erzeugt, das als zelleigener Energiespeicher bekannt ist. Enzyme ermöglichen und steuern

Ullmann, G. Matthias

78

Nr. 184 / 2011 // 24. Oktober 2011 Erfolgreicher FAN-Abschluss  

E-Print Network (OSTI)

von Stoffdatenmodellen auf dem Gebiet des Organic Rankine Cycle mit dem VDI-Preis ausgezeichnet. Dipl

Ullmann, G. Matthias

79

Nr. 180 / 2014 // 26. Sept. 2014 Spitzenplatz im regionalen Wissenstransfer  

E-Print Network (OSTI)

Entrepreneurship und Innovation ein. Sie bündelt von tech- nologischen Beratungsleistungen über Gründungsberatung universitätsnahe Einrichtungen beteiligt. Dazu zählen beispielsweise die Fraunhofer-Projektgruppe für

Ott, Albrecht

80

Technische Berichte Nr. 55 des Hasso-Plattner-Instituts fr  

E-Print Network (OSTI)

G¨ohringer (Fraunhofer IOSB) · Matthias Gries (Intel) · Werner Haas (Intel) · Prof. Dr. Hans) · Dr. Felix Salfner (SAP Innovation Center) · Prof. Dr. Bettina Schnor (Uni Potsdam) · Prof. Dr. Theo

Weske, Mathias

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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81

14 Advokaten Nr 5 2014 Barnrttscentrum vid Stockholms universitet genomfrde  

E-Print Network (OSTI)

Anna Kaldal, docent i juridik vid Stockholms universitet, när hon tillsammans med Carl-Göran Svedin

82

Nr. 206 / 2010 // 1. September 2010 Sommeruniversitt startet  

E-Print Network (OSTI)

Organisatoren begrü?en 55 neue Teilnehmer ­ Erstmals Gäste von der Universität Dar-es-Salaam Für die 14 Jurawissenschaftler der Universität Dar-es-Salaam zu Gast an der Universität Bayreuth. Ein spezielles juristisches

Ullmann, G. Matthias

83

Nr. 127 / 2013 // 22. Mai 2013 1.909 Zeichen  

E-Print Network (OSTI)

in Tansania und Kenia. Die Veranstaltung beginnt um 9:00 Uhr in der Universität Dar es Salaam (Mlimani Campus-deutsche Fachzentrum für Rechtswissenschaft (TGCL) ist ein Gemein- schaftsprojekt der Universitäten Dar es Salaam und

Ullmann, G. Matthias

84

Microsoft Word - NR DUF6 AWARD DEC 8 2010.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

8, 2010 Loretta.Averna@lex.doe.gov Department of Energy Awards Contract for Operation of Depleted Uranium Hexafluoride Conversion at Portsmouth, Paducah Facilities Lexington, KY...

85

DOE and HBCU MOU FINAL NR.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

has helped DOE's Environmental Management program advance research and development of innovative technologies and approaches for solving the Nation's critical environmental...

86

Working Papers / Documents de travail WP 2013 -Nr 12  

E-Print Network (OSTI)

-in-Aid for Scientific Research, JSPS (#23000001, #23330063). We thank L. Julien, A. Saidi and an anonymous referee

Boyer, Edmond

87

Microsoft Word - DE-NR0000031-075.doc  

National Nuclear Security Administration (NNSA)

procurement for FEMP designated products (5) Environmentally preferable and energy efficient electronics including desktop computers, laptops and monitors are at...

88

DOE-NR CAB New Members.docx  

NLE Websites -- All DOE Office Websites (Extended Search)

to work to develop a group consensus of ideas, are encouraged to apply. Several CAB vacancies exist for the upcoming year, 2014. The CAB is made up of citizens from Georgia and...

89

Nr. 11 / 10 vom 21. Januar 2010 Fachspezifische Bestimmungen  

E-Print Network (OSTI)

setzenden Kulturverständnisses an. (,,Wenn die Burka den Bikini trifft oder die Moschee neben dem Dom steht

Hellebrand, Sybille

90

Nordisk AeroForm ApS CVR nr. 14 83 87 75 Flvigvej 8, Vile ApS nr. 19 54 18  

E-Print Network (OSTI)

vingeleverandører: LM Glasfiber A/S, Vestas Windsystems A/S og Taywood Aerolaminates UK. Oparbejdningen af disse er Laboratoriet for Energiteknik. Vi takker for velvillig hjælp med fremskaffelse af prøveemner fra LM Glasfiber A. For vindmøllerne udgør glasfiber-vingerne imidlertid et specielt uløst problem. Fremtidig lovgivning såvel

91

25ste jaargang | nr. 5 | nr. 212 | afgiftekantoor Gent X | periodiek tijdschrift | verschijnt tweemaandelijks | P409859 | afzendadres: Onderbergen 1, 9000 Gent  

E-Print Network (OSTI)

tweemaandelijks | P409859 | afzendadres: Onderbergen 1, 9000 Gent |mei 2011 p Sophie Dutordoir: één brok energie p tekening: Wim Opbrouck #12;11 Sophie Dutordoir: één brok energie 2 Deelnemen is belangrijker dan winnen 8 Wereldburgers UGent-alumni vind je in alle sectoren en over de hele wereld. Zo kreeg ik onlangs een e-mail van

Gent, Universiteit

92

Small Molecule Agonists of the Orphan Nuclear Receptors Steroidogenic Factor-1 (SF-1, NR5A1) and Liver Receptor Homologue-1 (LRH-1, NR5A2)  

SciTech Connect

The crystal structure of LRH-1 ligand binding domain bound to our previously reported agonist 3-(E-oct-4-en-4-yl)-1-phenylamino-2-phenyl-cis-bicyclo[3.3.0]oct-2-ene 5 is described. Two new classes of agonists in which the bridgehead anilino group from our first series was replaced with an alkoxy or 1-ethenyl group were designed, synthesized, and tested for activity in a peptide recruitment assay. Both new classes gave very active compounds, particularly against SF-1. Structure-activity studies led to excellent dual-LRH-1/SF-1 agonists (e.g., RJW100) as well as compounds selective for LRH-1 (RJW101) and SF-1 (RJW102 and RJW103). The series based on 1-ethenyl substitution was acid stable, overcoming a significant drawback of our original bridgehead anilino-substituted series. Initial studies on the regulation of gene expression in human cell lines showed excellent, reproducible activity at endogenous target genes.

Whitby, Richard J.; Stec, Jozef; Blind, Raymond D.; Dixon, Sally; Leesnitzer, Lisa M.; Orband-Miller, Lisa A.; Williams, Shawn P.; Willson, Timothy M.; Xu, Robert; Zuercher, William J.; Cai, Fang; Ingraham, Holly A. (GSKNC); (Southampton); (UCSF)

2011-09-27T23:59:59.000Z

93

SRS Biomass Startup NR-03 12 12 - DOE FINAL.docx  

NLE Websites -- All DOE Office Websites (Extended Search)

CONTACTS FOR IMMEDIATE RELEASE CONTACTS FOR IMMEDIATE RELEASE Amy Caver (803) 952-7213 March 12, 2012 amy.caver@srs.gov CarolAnn Hibbard, (508) 661-2264 news@ameresco.com SRS MARKS SUCCESSFUL OPERATIONAL STARTUP OF NEW BIOMASS COGENERATION FACILITY Senior DOE Officials and SC Congressional Leadership Gather to Celebrate Major Renewable Energy Project AIKEN, S.C. - (March 12) Today, Under Secretary of Energy Thomas D'Agostino joined U.S. Representative

94

NR-SRS TRU Waste Shipments Milestone June 4 2013.docx  

NLE Websites -- All DOE Office Websites (Extended Search)

June 4, 2013 June 4, 2013 Bill Taylor, DOE-SR, (803) 952-8564 bill.taylor@srs.gov DT Townsend, SRNS, (803) 952-7566 Dt-lawrence.townsend@srs.gov Savannah River Site Exceeds Waste Shipment Goals AIKEN, S.C. - During the month of April, the Savannah River Site met two new milestone records towards analyzing, preparing, packaging and shipping radioactive transuranic (TRU) waste bound for a

95

Microsoft Word - NR DRAFT RFP WIPP M&O APR 1 2011  

NLE Websites -- All DOE Office Websites (Extended Search)

April 1, 2011 April 1, 2011 william.taylor@emcbc.doe.gov DOE Issues Draft Request for Proposals Seeking Contractor to Manage, Operate Waste Isolation Pilot Plant Cincinnati -- The U.S. Department of Energy (DOE) issued a Draft Request for Proposal (RFP) seeking a management and operations contractor to maintain the Waste Isolation Pilot Plan (WIPP) and manage the DOE National Transuranic Waste (TRU) Program in Carlsbad, New Mexico. The estimated value of the anticipated contract is from $130 to $160 million per year, for five years, with an option to extend the contract for an additional five years. DOE anticipates awarding a competitive, cost-plus- award-fee contract during 2012. The overall mission of the WIPP and the National TRU program is to protect human health and the

96

Onafhankelijk magazine van de vrije Universiteit --www.advalvas.vU.nl Nr 210 september 2014  

E-Print Network (OSTI)

'n ligfiets rij je iedereen eruit Straatkinderen klaarstomen voor de universiteit `Ebola-angst hield me nietZweegman, docent van het jaar 20 Student trotseert ebola-angst 22 3 #12;Europese lidstaten willen niet investeren

97

Baggrundsrapport nr. 24 Effects of marine windfarms on the distribution of  

E-Print Network (OSTI)

the construction period of both the wind mills and the cable tracé many of the fish species as well as marine. The under- water changes in the windmill area will be the stone and concrete foundations of mills will be occu- pied by the foundations of the mills is so small (around 1000 m2 ), that it can be considered

98

Nr. 066 / 2014 // 17. April 2014 Dr. Christoph Schmidt, Wissenschaftlicher Mitarbeiter am  

E-Print Network (OSTI)

gezielte Bestrahlung der Mine- rale mit Licht oder Wärme wieder aus den Haftstellen herausgelöst. Die Menge

Ullmann, G. Matthias

99

ACASA DESPRE REVISTA ECHIPA FELICIA NUMARUL CURENT ARHIVA AUTORI AN III, NR.88,  

E-Print Network (OSTI)

spectaculoasa a natalitatii. Cel putin in spatiul european (inclusiv in România) si cel american. Este adevarat este mai putin. 2. O investitie crescuta in fiecare copil mareste sansele lui de succes in viata si

Lummaa, Virpi

100

Front 11.06.12 / Nr. 133 / Seite 1 / Teil 01 BRSEN UND MRKTE  

E-Print Network (OSTI)

Menschenmögliche getan, um Russland zu einem stabilen Staat zu machen. Von Stephan Bierling Der Westen hat Putin Sowjetunion systematisch überging. Der Westen sei selber schuld, dass es ihm Putin nun mit gleicher Münze Putin wohl nicht auf der Krim eingefallen. Parallel bot die Nato Russland Sonderbeziehungen an, die sich

Schubart, Christoph

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

EINBLICKE Nr. 49 / FRHJAHR 2009 -CARL VON OSSIETZKY UNIVERSITT OLDENBURG SPIELREGELN DES WANDELS  

E-Print Network (OSTI)

in Germany to provide all of its energy require- ments by means of biogas: it even feeds electricity illustrates the relevance of this research in Lower Saxony, Germany, where the regional government recently

Oldenburg, Carl von Ossietzky Universität

102

Meteoritics & Planetary Science 39, Nr 4, 617623 (2004) Abstract available online at http://meteoritics.org  

E-Print Network (OSTI)

line source: this material is winnowed by the zonal wind field to form streaks, with coarse radar the vertically-extended atmosphere requires a long wake to reach the vacuum of space, and the modest impact velocities mean plume expansion along the wake is slow enough to allow the wake to close off. Beyond

Lorenz, Ralph D.

103

Nr d'ordre : 2010-32 ECOLE CENTRALE DE LYON  

E-Print Network (OSTI)

ECL Nbre ICTT 1 CALLARD Anne-Ségolène maître de conférences INL ECL CLOAREC Jean-Pierre maître de conférences INL ECL GAFFIOT Frédéric professeur INL ECL GAGNAIRE Alain maître de conférences INL ECL GARRIGUES Michel directeur de recherche INL CNRS/ECL GENDRY Michel directeur de recherche INL CNRS/ECL GRENET

Paris-Sud XI, Université de

104

SUMMER 2014 TO: NR 220 and F 230 Summer Session Students  

E-Print Network (OSTI)

for the education of students from all over the world. This packet is intended to help you prepare for the living. A small refrigerator is provided. Study lamps are desirable. Posters and other inexpensive decorations can

105

Meteoritics & Planetary Science 39, Nr 2, 233246 (2004) Abstract available online at http://meteoritics.org  

E-Print Network (OSTI)

and fragmentation procedures, which vary from industrial processes, such as coal and oil shale fragmentation (Murri

Stewart, Sarah T.

106

EINBLICKE Nr. 49 / FRHJAHR 2009 -CARL VON OSSIETZKY UNIVERSITT OLDENBURG DIE NEUERFINDUNG DER MODERNE  

E-Print Network (OSTI)

(oil, natural gas, coal) which we burn up every year were formed as result of geochemical processes" the future by means of heaping up enormous amounts of foul credit. Capital must first be created before it can be usefully deployed. This is just as true for natural capital:The huge amounts of fossil energy

107

100-NR-2 Apatite Treatability Test: An update on Barrier Performance  

SciTech Connect

This report updates a previous report covering the performance of a permeable reactive barrier installed at 100N. In this report we re-evaluate the results after having an additional year of performance monitoring data to incorporate.

Fritz, Brad G.; Vermeul, Vincent R.; Fruchter, Jonathan S.; Szecsody, James E.; Williams, Mark D.

2011-05-01T23:59:59.000Z

108

Meteoritics & Planetary Science 39, Nr 8, 14091411 (2004) Abstracts available online at http://meteoritics.org  

E-Print Network (OSTI)

contributions to particle physics, nuclear physics (the discovery of nuclear particle tracks and the invention this technique to diverse problems in meteoritics, neutron dosimetry and cosmic rays, as well as archaeology

109

Notiz Nr. 13 / 2012 // 23. Mrz 2012 Notizen aus der Universitt Bayreuth  

E-Print Network (OSTI)

Neue und innovative Best-Practice Lösungen aus dem Themenfeld ,,Ressourceneffizienz": Die Fraunhofer, Universität Bayreuth, Tel: 0921 / 55 7302, e-Mail: stefan.slawik@uni- bayreuth.de. Information zur Fraunhofer-Projektgruppe Prozessinnovation: Die Fraunhofer-Projektgruppe Prozessinnovation an der Universität Bayreuth arbeitet hauptsächlich

Ullmann, G. Matthias

110

EINBLICKE Nr. 49 / FRHJAHR 2009 -CARL VON OSSIETZKY UNIVERSITT OLDENBURG Liebe Leserinnen,  

E-Print Network (OSTI)

weitergemacht wird wie bisher ­, Peak Oil, also das Ende billigen Erdöls, und jetzt die globale Finanz- und as before, `peak oil' ­ meaning the end of cheap oil supplies ­, and now the global financial collapse

111

Nr. 4 / 2013 // 14. Januar 2013 Die Universitt trauert um ihren Prsidenten  

E-Print Network (OSTI)

-Zentrum Geesthacht, Zentrum für Material- und Küstenforschung). Seit 2002 wirkte Professor Bormann als

Ullmann, G. Matthias

112

1861 The Meteoritical Society, 2008. Printed in USA. Meteoritics & Planetary Science 43, Nr 11, 18611877 (2008)  

E-Print Network (OSTI)

of Chicago, 5640 S. Ellis Ave., Chicago, Illinois 60637, USA 6Glenn T. Seaborg Institute, Lawrence Livermore

Grossman, Lawrence

113

Meteoritics & Planetary Science 43, Nr 3, 561569 (2008) Abstract available online at http://meteoritics.org  

E-Print Network (OSTI)

Sciences Laboratory, University of California at Berkeley, Berkeley, California 94720, USA 6Glenn T. Seaborg Institute, Lawrence Livermore National Laboratory, Livermore, California 94551, USA *Corresponding

114

Meteoritics & Planetary Science 39, Nr 6, 787790 (2004) Abstract available online at http://meteoritics.org  

E-Print Network (OSTI)

exploratory program by PEMEX with intermittent core recovery and, more recently, by the National University, magnetotelluric and offshore seismic surveys, pre-existing boreholes of PEMEX and UNAM programs, site conditions

Claeys, Philippe

115

Dipl.-Chem. Katharina Jacob Tel.nr.: 03641 9 48453  

E-Print Network (OSTI)

. Ondruschka Jahrestagung 2012, Fachgruppe Nachhaltige Chemie, Kaiserslautern, September 2012 Lebenslauf: seit Technische Chemie und Umweltchemie seit 04/2012 Promotionsstudent an der FSU Jena 10/2006 - 03/2012 Chemie

Knüpfer, Christian

116

FREIEN HANSESTADT BREMEN 2011 Nr. 83Ausgegeben am 2. August 2011  

E-Print Network (OSTI)

Fachspezifische Prüfungsordnung für den Bachelorstudiengang ,,Chemie" (Vollfach) der Universität Bremen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S . 903 Fachspezifische Prüfungsordnung für das Fach ,,Chemie" im Zwei-Fächer-Bachelorstudium der . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . S . 925 903 Fachspezifische Prüfungsordnung für den Bachelorstudiengang ,,Chemie" (Vollfach) der

Hoffmeister, Thomas S.

117

FREIEN HANSESTADT BREMEN 2006 Nr. 5Ausgegeben am 9. Januar 2006  

E-Print Network (OSTI)

Fachspezifische Prüfungsordnung für den Bachelorstudiengang ,,Chemie" mit Haupt- und Nebenfach der Universität für den Bachelorstudiengang ,,Chemie" mit Haupt- und Nebenfach der Universität Bremen1 Vom 6. Dezember Prüfungsordnung für den Bachelorstudiengang ,,Chemie" mit Haupt- und Nebenfach in der nachste- henden Fassung

Hoffmeister, Thomas S.

118

EINBLICKE Nr. 49 / FRHJAHR 2009 -CARL VON OSSIETZKY UNIVERSITT OLDENBURG DAS PROJEKT ,,NORDWEST 2050"  

E-Print Network (OSTI)

März 2009 gestartete Forschungsvorhaben ,,NordWest 2050: Perspek- tiven für klimaangepasste Center Bremen, and BioConsult Schuchardt & Scholle GbR. NordWest 2050 is funded by the German Federal regionale Wirtschaft hat. Bremerhaven: Climate change influences global transport routes and streams

119

Die ,,Erfolgsstory der Windenergie" (s. EINBLICKE Nr. 32, 2000) setzt sich  

E-Print Network (OSTI)

has a scientific consulting role in the installation of Germany's first offshore wind-park off ersteAnlagen 2008 installiert werden, macht dabei denAnfang.Als erster deutscherWind- park wird das geprägt, auch wenn dort bislang noch keine Windparks errichtet wurden. Die sogenannte Offshore

Heinemann, Detlev

120

How to reach us By public transport, take tram nr. 10 from  

E-Print Network (OSTI)

. Contact Rehabilitation Engineering Lab, ETH Zurich LEO B 9.1, Leonhardstrasse 27 8092 Zurich, Switzerland Phone: +41 44 632 59 17 Fax: +41 44 632 14 16 http://www.relab.ethz.ch Limmat 6/10 Haldenegg ETH Zurich-Motor Systems Lab, ETH Zurich · Institute of Neuroinformatics, ETH Zurich · Biomedical Optics Research

Daraio, Chiara

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Meteoritics & Planetary Science 38, Nr 2, 197224 (2003) Abstract available online at http://meteoritics.org  

E-Print Network (OSTI)

, New York 11235, USA; Department of Earth and Planetary Sciences, American Museum of Natural History, Central Park West, New York, New York 10024, USA; and Department of Geological Sciences, Rutgers-aluminum-rich inclusions (CAIs) were among the first igneous rocks produced within our solar system. These cm-sized spheres

Connolly Jr, Harold C.

122

Comparison of ASHRAE Standard 90.1, 189.1 and IECC Codes for Large Office Building in Texas), Energy Systems Laboratory, Texas A&M University.  

E-Print Network (OSTI)

............................................................................ 14 Table 6: Comparison of Chiller and Boiler Specifications for the Analyzed Climate Zones ..................................... 24 Table 7: Comparison of Economizer Requirements for the Analyzed Climate Zones... 2A N.R N.R N.R N.R N.R N.R N.R N.R 3A N.R N.R N.R N.R N.R N.R N.R N.R 4B N.R N.R N.R N.R N.R N.R R-10 at 2ft. R-10 at 4ft. Note: N indicates North orientation. For roof and wall absorptance value of 0.7 are taken from Section 13.7.3.3 of ASHRAE...

Mukhopadhyay, J.; Baltazar, J.C.; Kim,H.; Haberl, J.

2011-01-01T23:59:59.000Z

123

Bio/consult as Horns Rev. Summary of baseline surveys Dok. nr. 2041-02-03-004, rev. 2  

E-Print Network (OSTI)

# Wind mills Elsam Sampling of stations in the reference area Sampling of stations in the wind farm area in currents by the wind mill foun- dations. Samples were recovered using a core sampler of 0.0123m² seabed wind farm with an output of 150 MW in the waters of Horns Rev, approximately 15 km off Blåvandshuk

124

198 PRZEGLD ELEKTROTECHNICZNY (Electrical Review), ISSN 0033-2097, R. 85 NR 5/2009 Mariusz WONIAK1  

E-Print Network (OSTI)

, Simon C. HOPKINS2 , Bartlomiej A. GLOWACKI2 , Tadeusz JANOWSKI1 Lublin University of Technology (1 and for applications including SMES. Experimental methods Two contrasting multifilamentary NbTi samples were selected

Glowacki, Bartek A.

125

Thomas Paine Study Centre, University of East Anglia, Norwich NR4 7TJ 10.00 Registration and Coffee  

E-Print Network (OSTI)

medicines and their efficacy, assessment of new delivery mechanisms (nanotechnology), product validation · Stem Cell analysis Assessment of: · New medicine efficacy · New delivery mechanisms (nanotechnology

Matthews, Adrian

126

SRP4760R List of Lots By Purchaser As at :-19-apr-2011:14:25 WHAM (Caio, Nr. Llandovery)  

E-Print Network (OSTI)

SRP4760R List of Lots By Purchaser As at :- 19-apr-2011:14:25 Page 1 101.00 102.00 103.00 104 Name Purchaser WALES Tender30-MAR-11 Mar 2011 Esale #12;SRP4760R List of Lots By Purchaser As at :- 19

127

N.R. Pal et al. (Eds.): ICONIP 2004, LNCS 3316, pp. 13341343, 2004. Springer-Verlag Berlin Heidelberg 2004  

E-Print Network (OSTI)

.6% classi- fication accuracy with relatively fast mining speed. 1 Introduction Cervical cancer is a leading of cervical cancers is the pres- ence of HPV, especially high-risk type HPV. #12;Genetic Mining of DNA Heidelberg 2004 Genetic Mining of DNA Sequence Structures for Effective Classification of the Risk Types

128

MITTEI L U N G E N Nr. 3 KATALOC DER TYPEM VON FORMICIDAE (HYMENOPTERA) DER SAMM-  

E-Print Network (OSTI)

. Dorylus bcquaerti Forel, 1913, Rev. Zool. Afr., 2:311, 3 S f .Sanklsia, Congo, BEQQUAERTleg. 458. Dorylus bequaerti Forel, sa zlmmermanntSantschi, 1910, Rev. suisse ~ o o l .A IB;TW. 31 s 8;3 s s.congo ~ r S a .Congo Fr., Madingnu, ZlMMERMANN leg. 460, Dorylus spininodia Emery ssp. iongiceps Viehmeyer, 1914. Arch

Villemant, Claire

129

Orphan Nuclear Receptor PNR/NR2E3 Stimulates p53 Functions by Enhancing p53 Acetylation  

Science Journals Connector (OSTI)

...January 2012 research-article Articles Orphan Nuclear Receptor PNR...define this orphan nuclear receptor as a...Laboratory for Cancer Research, University...Extramural Research Support, Non-U...human 0 Orphan Nuclear Receptors 0 Tumor...

Zhi Wen; Dohun Pyeon; Yidan Wang; Paul Lambert; Wei Xu; Paul Ahlquist

2011-10-24T23:59:59.000Z

130

EINBLICKE Nr. 51 / FRHJAHR 2010 -CARL VON OSSIETZKY UNIVERSITT OLDENBURG ,,VON DA AN KONNTE ICH ALLES SAGEN"  

E-Print Network (OSTI)

mithilfe der Tafel aufgezeichnetes Gedicht in die Schule mitbrachte, das sie im ,,Morgenkreis" gelernt

131

Building | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Scientists at GE Global Research get into the holiday spirit by bringing high-tech additive manufacturing techniques to Christmas... Read More Global Research and GE...

132

GE Research and Development | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

a decade of innovation Closing the Culture Gap Between Academia and Industry Additive Manufacturing Demonstration at GE Global Research innovate Latest News U.S....

133

Working at GE Global Research | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

> Why GE Why GE Fostering curiosity and work that makes a big impact on the world. That's how GE helps keep talented researchers motivated. Inspire For our scientists,...

134

6.3.2 Ge spinels and substituted Ge spinels  

Science Journals Connector (OSTI)

Al-Ge-Li-O: LiGeAlO4 (Sp). Co-Ga-Ge-O: Co1+xGa2-2xGexO4 (Sp). Co-Ge-L-Li-O: Co0.5LiGeL5O4 (Sp). Co-Ge-Mg-O: Co2-xMgxGeO4 (Sp). Co-Ge-Ni-O: CoNiGeO4 (Sp). Co-Ge-O-Zn: Co2-xZnxGeO4 (Sp). Co-Ge-O: C...

D. Bonnenberg; H.P.J. Wijn

1970-01-01T23:59:59.000Z

135

Chevron, GE form Technology Alliance  

NLE Websites -- All DOE Office Websites (Extended Search)

Chevron, GE form Technology Alliance Chevron, GE form Technology Alliance The Chevron GE Technology Alliance will develop and commercialize valuable technologies to solve critical...

136

Curing | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

this paper-based instrument, the size of a deck of playing cards, enables... Read More Additive Manufacturing Demonstration at GE Global Research See how GE Global Research is...

137

GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

geglobalresearch.com Fri, 30 Jan 2015 17:46:29 +0000 en-US hourly 1 GE Researcher: Putting GE Beliefs into Action http:www.geglobalresearch.comblogcutting-edge-technology-peopl...

138

GE Healthcare Antibody Purification  

E-Print Network (OSTI)

.....................................................................................................................4 Chapter 3. Small-scale purification by affinity chromatography......................43 GeneralGE Healthcare Antibody Purification Handbook GE Healthcare imagination at work agination at work Purification Handbook Principles and Methods 18-1142-75 Isolation of mononuclear cells Methodology

Lebendiker, Mario

139

GE and Quirky | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

a partnership that introduces a whole new way of inventing. We teamed up with Quirky, the social product development company, to give everyday inventors access to GE's patents to...

140

In Proceedings of 1st International Conference on Dextrous Autonomous Robots and Humanoids (darh2005) Yverdon-les-Bains -Switzerland, paper nr. 3.2, May 2005.  

E-Print Network (OSTI)

of Computer Science Georges-K¨ohler-Allee 52, 79110 Freiburg, Germany {behnke, jmuller, schreibe}@informatik.uni-freiburg.de Abstract Small humanoid robots available today often lack computing power and vision sensors. They fre have ample computing power to run image processing, self-localization, behavior control

Behnke, Sven

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

2001 by the Arizona Board of Regents on behalf of the University of Arizona Near East Chronology: Archaeology and Environment. RADIOCARBON, Vol 43, Nr 3, 2001, p 11791189  

E-Print Network (OSTI)

with respect to salt and gypsum (Neev and Emery 1967; Stiller et al. 1997). The water has a wide range of inorganic radiocarbon composition (Stiller et al. 1988; Talma et al. 1997). Runoff water often formed a less have also occurred naturally in the past (Stiller and Chung 1984) inducing changes in the bottom lake

Yehouda, Enzel

142

SLU, Box 58, SE-230 53Alnarp, Sverige tel: +46 (0)40-4150 00 Org.nr 202100-2817 info@slu.se  

E-Print Network (OSTI)

to such questions of sustainable urban development, for instance, when it comes to the importance of green areas continually threatened by building development. Conflicts over land use are expected to increase further sustainable development. The exchange of experiences with other key future research areas has thus far been

143

Stundenplan fr Medieninformatiker im ersten Semester 36 600 (VL) Einfhrung in die Informatik und Medieninformatik (dazu bung siehe LV-Nr.  

E-Print Network (OSTI)

) 2 st. Gruppe 1: Di 16-18 in CIP Pool RZ 1 (RZ 1.02) Gruppe 2: Do 10-12 in CIP Pool RZ 1 (RZ 1.02) Gruppe 3: Do 12-14 in CIP Pool PT 4 (PT 1.0.17a) Gruppe 4: Fr 10-12 in CIP Pool RZ 1 (RZ 1.02) Gruppe 5: Fr 12-14 in CIP Pool RZ 1 (RZ 1.02) INF - M 03.2+WB (2+4), MEI - M03.1, RZ - M 32.1, WiWi - BSc

Schubart, Christoph

144

Translation of Announcement nr. 126 issued on the 19 March 2012 Page 1 of 11 Call for Doctoral positions in the International Doctoral School in  

E-Print Network (OSTI)

of assistive technology for the elderly"; 1 study grant: Department of Information Engineering and Computer Science, relative to the project "Statistical Machine Translation and Social Computing"; 1 study grant for Problem Solving"; 1 study grant: Department of Information Engineering and Computer Science, relative

145

Translation of Announcement nr. 126 issued on the 19 March 2012 Page 1 of 11 Call for Doctoral positions in the International Doctoral School in  

E-Print Network (OSTI)

study grants: University of Trento; 1 study grant: Department of Information Engineering and Computer applications"; 1 study grant: Department of Information Engineering and Computer Science, relative positions in the International Doctoral School in "Information and Communication Technologies" - 28th Cycle

146

212 NAW 5/14 nr. 3 september 2013 Onweer: een bron van broeikasgassen en antimaterie Christoph Khn, Margreet Nool, Ute Ebert Christoph Khn  

E-Print Network (OSTI)

) waargenomen boven Egyp- te. Hun bron was in tijd en ruimte gecorre- leerd met een bliksemschicht boven Zambia

Ebert, Ute

147

Multiple Irradiation Capsule Experiment (MICE)-3B Irradiation Test of Space Fuel Specimens in the Advanced Test Reactor (ATR) - Close Out Documentation for Naval Reactors (NR) Information  

SciTech Connect

Few data exist for UO{sub 2} or UN within the notional design space for the Prometheus-1 reactor (low fission rate, high temperature, long duration). As such, basic testing is required to validate predictions (and in some cases determine) performance aspects of these fuels. Therefore, the MICE-3B test of UO{sub 2} pellets was designed to provide data on gas release, unrestrained swelling, and restrained swelling at the upper range of fission rates expected for a space reactor. These data would be compared with model predictions and used to determine adequacy of a space reactor design basis relative to fission gas release and swelling of UO{sub 2} fuel and to assess potential pellet-clad interactions. A primary goal of an irradiation test for UN fuel was to assess performance issues currently associated with this fuel type such as gas release, swelling and transient performance. Information learned from this effort may have enabled use of UN fuel for future applications.

M. Chen; CM Regan; D. Noe

2006-01-09T23:59:59.000Z

148

Selection of the InGaAs/InP as the Single TPV Diode Material System for NR Research and Development  

SciTech Connect

Advanced Concepts has focused on developing two material systems (InGaAs/InP and InGaAsSb/GaSb) over the past several years. This work summarizes a scientific evaluation of both material systems to determine which material has the greatest potential for high-efficiency (27%) and power density (0.8W/cm{sup 2}) TPV energy conversion. Lockheed Martin, KAPL Inc. and Bechtel Bettis have issued a joint recommendation to focus all diode development efforts in the future on InGaAs/InP TPV diodes, based on it's potential to acquire the required performance.

M Dashiell

2004-12-08T23:59:59.000Z

149

Powering | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers.... Read More Brilliant(tm) Wind...

150

Predix | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

developed over the last three years and was first announced publicly at GE's Minds+Machines conference in Chicago, Illinois, in October 2013. Predix enables asset and operations...

151

Wannapa CHUMEKA Mmoire prsent en vue de l'obtention du  

E-Print Network (OSTI)

and PLA-NR-PLA triblock copolymer). PLA/NR blends were prepared by melting blending in a twin screw extruder and compression molded to obtain a 2-mm thick sheet. The blends contained 10-20 wt% of NR

Paris-Sud XI, Université de

152

GE, Sandia National Lab Improve Wind Turbines | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

GE, Sandia National Lab Discover Pathway to Quieter, More Productive Wind Turbines GE, Sandia National Lab Discover Pathway to Quieter, More Productive Wind Turbines Use of...

153

Chevron, GE form Technology Alliance  

NLE Websites -- All DOE Office Websites (Extended Search)

Chevron, GE form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE...

154

Strafrecht  

Science Journals Connector (OSTI)

Die Staatsanwaltschaft hat das Anklagemonopol, 246 Strafprozessgesetz Gesetz Nr.341, zuletzt gendert durch das Gesetz Nr.8730 vom 21.Dezember 2007; (englische bersetzung in der Fassung...

Seong-Cheon Kim

2010-01-01T23:59:59.000Z

155

Carousolar | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Fun Carousolar Uses Solar Power for Fun This amazing all-white carousel is powered by 100 solar panels and lit up by GE's colorful TETRA Countour LED lights. You Might Also Like...

156

Ge-Au eutectic bonding of Ge {100} single crystals  

Science Journals Connector (OSTI)

We present preliminary results on the eutectic bonding between two {100} Ge single crystal surfaces using thin films of ... Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity...

W. B. Knowlton; K. M. Itoh; J. W. Beeman; J. H. Emes

1993-11-01T23:59:59.000Z

157

Colon Cancer Mapping | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt University has partnered with GE Global...

158

GE | OpenEI Community  

Open Energy Info (EERE)

by Jessi3bl(15) Member 16 December, 2012 - 19:18 GE, Clean Energy Fuels Partner to Expand Natural Gas Highway clean energy Clean Energy Fuels energy Environment Fuel GE Innovation...

159

(La0.3Ge0.7)(Ni0.85Ge0.15)2Ge2  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of (La0.3Ge0.7)(Ni0.85Ge0.15)2Ge2 representing the structure type (La0.30Ge0.70)(Ni0.85Ge0.15)2Ge2.

P. Villars; K. Cenzual; J. Daams

2011-01-01T23:59:59.000Z

160

Barcelona, (data / fecha / date) Signatura / Firma / Signature: Sollicitud d'Ajut de Matrcula per a Msters Universitaris 2013-14  

E-Print Network (OSTI)

: ............................................................................................................. NIF o Nº Passaport / NIF o Nº Pasaporte / NIF or Passport Nr: ................................. Data

Geffner, Hector

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Barcelona, (data / fecha / date) ......................................... Signatura / Firma / Signature  

E-Print Network (OSTI)

: ............................................................................................................. NIF o Nº Passaport / NIF o Nº Pasaporte/ NIF or Passport Nr: ................................. Data de

Geffner, Hector

162

Barcelona, (data / fecha / date) Signatura / Firma / Signature: Sollicitud d'Ajut de Matrcula per a Msters Universitaris 2014-15  

E-Print Network (OSTI)

: ............................................................................................................. NIF o Nº Passaport / NIF o Nº Pasaporte / NIF or Passport Nr: ................................. Data

Geffner, Hector

163

Natural Gas Locomotive | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

government. GE engineers are currently testing a fuel mixture that is 80% LNG, and 20% diesel using existing engine hardware. GE engineers continue to address several challenges...

164

New Medical Technology | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

of care and expanding medical treatment boundaries. Home > Innovation > Healthcare Additive Manufacturing Demonstration at GE Global Research See how GE Global Research is...

165

Hospital Sterile Processing | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Researches Use of Robots for Hospital Sterile Processing GE Researches Use of Robots for Hospital Sterile Processing GE principal investigator Lynn DeRose discusses the robotic...

166

Oil & Gas Technology Center | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Global Research Oil & Gas Technology Center GE Global Research Oil & Gas Technology Center Mark Little, SVP and chief technology officer for GE, and Eric Gebhardt, vice president...

167

GE Innovation and Manufacturing in Europe | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Wins Award 1-2-38-v-software-reliability-engineering A Stochastic Process-Based Look at Software Reliability 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

168

GE Global Research Europe, Munich, Germany | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Munich, Germany Munich, Germany With a hand in nearly all GE research fields, this center is a hub of commercial and industrial science and technology innovation. Visit the Careers...

169

4.3.2 Ge spinels and Ge spinels with substitutions  

Science Journals Connector (OSTI)

Al-Ge-Li-O-Zn: Li5Al5Zn8Ge9O36 (Sp). Al-Ge-Li-O: Li0.5+0.5xGexAl2.5-1.5xO4 (Sp). Al-Ge-O-Zn: Zn2GeO4: Al (Sp). Co-Fe-Ge-O: Co2-2xFe2xGeO4 (Sp). Co-Ge-L-Li-O: Co0.5LiGeL5O4 (Sp). Co-Ge-Mg-O: Co2-x

D. Bonnenberg; K. A. Hempel

1980-01-01T23:59:59.000Z

170

MEMS Relays | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

MEMS Technology 2-1-7-v-metal-mems-devices MEMS: Inside the Global Research Cleanroom 2-3-11-v Carousolar Uses Solar Power for Fun 2-2-6-v GE Scientists Demonstrate...

171

Laser Additive Manufacturing in GE  

Science Journals Connector (OSTI)

There has been an increasing interest given to laser additive manufacturing (LAM) in recent years from across the global. GE has been one of the leading industries engaging in this...

Peng, Henry; Li, Yanmin; Guo, Rui; Wu, Zhiwei

172

GE computer move in Japan  

Science Journals Connector (OSTI)

GE computer move in Japan ... General Electric is moving ahead with plans to set up a joint computer venture in Japan with Tokyo Shibaura Electric (Toshiba) and Mitsubishi Electric. ... Later, possibly in about three years, it will manufacture in Japan. ...

1967-02-06T23:59:59.000Z

173

Kinetic study of GeO disproportionation into a GeO{sub 2}/Ge system using x-ray photoelectron spectroscopy  

SciTech Connect

GeO disproportionation into GeO{sub 2} and Ge is studied through x-ray photoelectron spectroscopy. Direct evidence for the reaction 2GeO {yields} GeO{sub 2} + Ge after annealing in ultra-high vacuum is presented. Activation energy for GeO disproportionation is found to be about 0.7 {+-} 0.2 eV through kinetic and thermodynamic calculations. A kinetic model of GeO disproportionation is established by considering oxygen transfer in the GeO network. The relationship between GeO disproportionation and GeO desorption induced by GeO{sub 2}/Ge interfacial reaction is discussed, and the apparent contradiction between GeO desorption via interfacial redox reaction and GeO disproportionation into Ge and GeO{sub 2} is explained by considering the oxygen vacancy.

Wang Shengkai [Micorowave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 Bei-Tu-Cheng West Road, Beijing 100029 (China); Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Liu Honggang [Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 Bei-Tu-Cheng West Road, Beijing 100029 (China); Toriumi, Akira [Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2012-08-06T23:59:59.000Z

174

GE PowerPoint Template  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Steels for Steels for Accident Tolera nt Fuel Cla ddings Ferritic Ma rtensitic Alloys a s Accident Tolera nt Fuel (ATF) Cla dding Ma teria l for Light Wa ter Rea ctors Ra ul B. Reba k, GE Globa l Resea rch DOE Integra tion Meeting, Sa lt La ke City 27-August-2013 DE NE 568 2 / GE Reba k - DOE Integra tion Meeting, Sa lt La ke City, 27-August-2013/ GE Project Tea m 3 / GE Reba k - DOE Integra tion Meeting, Sa lt La ke City, 27-August-2013/ Approa ch of GE Resea rch Proposa l * Demonstra te tha t sta inless iron ba sed bulk a lloys or Adva nced Steels ca n be used a s fuel cla dding ma teria ls in commercia l nuclea r rea ctors * The proposed ma teria l should be a s good a s Zr a lloys (or better tha n Zr a lloys) under norma l opera tion conditions 1. Resista nt to genera l corrosion a nd environmenta l cra

175

GE Teams with NY College to Pilot SOFC Technology |GE Global...  

NLE Websites -- All DOE Office Websites (Extended Search)

Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology GE - Fuel Cells to install...

176

Cs4(In0.27Ge0.73)15Ge8  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of Cs8In8Ge38 representing the structure type Cs4(In0.27Ge0.73)15Ge8.

P. Villars; K. Cenzual; J. Daams

2004-01-01T23:59:59.000Z

177

Ba6(In0.36Ge0.64)11Ge14  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of Ba6In4Ge21 representing the structure type Ba6(In0.36Ge0.64)11Ge14.

P. Villars; K. Cenzual; J. Daams

2005-01-01T23:59:59.000Z

178

Clean Cities: National Clean Fleets Partner: GE  

NLE Websites -- All DOE Office Websites (Extended Search)

GE to GE to someone by E-mail Share Clean Cities: National Clean Fleets Partner: GE on Facebook Tweet about Clean Cities: National Clean Fleets Partner: GE on Twitter Bookmark Clean Cities: National Clean Fleets Partner: GE on Google Bookmark Clean Cities: National Clean Fleets Partner: GE on Delicious Rank Clean Cities: National Clean Fleets Partner: GE on Digg Find More places to share Clean Cities: National Clean Fleets Partner: GE on AddThis.com... Goals & Accomplishments Partnerships National Clean Fleets Partnership National Parks Initiative Electric Vehicle Infrastructure Training Program Advanced Vehicle Technology Competitions Natural Gas Transit & School Bus Users Group Natural Gas Vehicle Technology Forum Hall of Fame Contacts National Clean Fleets Partner: GE

179

GE Energy Formerly GE Power Systems | Open Energy Information  

Open Energy Info (EERE)

GE Power Systems GE Power Systems Jump to: navigation, search Name GE Energy (Formerly GE Power Systems) Place Atlanta, Georgia Zip 30339 Sector Renewable Energy, Solar, Wind energy Product Atlanta-based supplier of power generation and energy delivery technologies in all areas of the energy industry including renewable resources such as water, wind, solar and alternative fuels. Coordinates 33.748315°, -84.391109° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.748315,"lon":-84.391109,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

180

FW370 -Design of Fish and Wildlife Projects -Spring 2012 Course Meeting Times/Places: Tu/Th 10-11:40, Wagar 107 (Lecture & Discussion) or NR 232, CLL West (Lab)  

E-Print Network (OSTI)

FW370 - Design of Fish and Wildlife Projects - Spring 2012 Course Meeting Times/Places: Tu/Th 10 of this course is to introduce you to the principles of conducting sound scientific research in fish, wildlife of the scientific method in fish, wildlife, and conservation biology research (from asking good questions

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

FW370 Design of Fish and Wildlife Projects Spring 2011 Course Meeting Times/Places: Tu/Th 1011:40, Wagar 107 (Lecture & Discussion) or NR 232, CLL West (Lab)  

E-Print Network (OSTI)

FW370 Design of Fish and Wildlife Projects Spring 2011 Course Meeting Times/Places: Tu/Th 1011 is to introduce you to the principles of conducting sound scientific research in fish, wildlife, and conservation of the scientific method in fish & wildlife research (from asking good questions to designing experiments

182

RADIOCARBON, Vol 50, Nr 1, 2008, p 5373 2008 by the Arizona Board of Regents on behalf of the University of Arizona A NEW METHOD FOR ANALYZING 14C OF METHANE IN ANCIENT AIR  

E-Print Network (OSTI)

(Brasseur et al. 1999). It is also the third most important greenhouse gas after H2O and CO2, with a global conversion line utilizing platinized quartz wool for CH4 combustion and the use of an ultra-high-purity iron conversion line were determined to be 0.23 ± 0.16 µg and 23.57 ± 16.22 pMC, respectively. The amount

Severinghaus, Jeffrey P.

183

Faculty -ITALIAN NAME Faculty -ENGLISH NAME Bilateral Agreement Nr Erasmus Code Name of Institution area code Description of area Dept. Co-ordinator AGRARIA Agriculture Sciences 33 A -INNSBRU01 Leopold-Franzens Universitt Innsbruck 7.2 Environmental Scien  

E-Print Network (OSTI)

of Institution area code Description of area Dept. Co-ordinator AGRARIA Agriculture Sciences 33 A -INNSBRU01 Leopold-Franzens Universität Innsbruck 7.2 Environmental Sciences, Ecology SCOTTON Michele AGRARIA Agriculture Sciences 882 A -SALZBUR08 Fachhoschschule Salzburg 1.9 Others MONTECCHIO Lucio AGRARIA Agriculture

Schenato, Luca

184

278 NAW 5/1 nr. 3 september 2000 Minimization of the renormalized energy in the unit ball of R2 L. Ignat, C. Lefter, V.D. Radulescu Department of Mathematics, University of Craiova  

E-Print Network (OSTI)

-Onnes. Superconducting materials exhibit two main properties: i. Their electric resistance is virtually zero. ii- tions (Green's formula for the Neumann problem), convex functions, elementary identities or inequalities

Radulescu, Vicentiu

185

RADIOCARBON, Vol 44, Nr 2, 2002, p 567580 2002 by the Arizona Board of Regents on behalf of the University of Arizona RADIOCARBON DATING OF DEEP-SEA CORALS  

E-Print Network (OSTI)

calibration points because they contain enough Uranium to make independent 230Th dates on the exact same 94550 USA 4Dept. of Geology and Geophy

Adkins, Jess F.

186

Hot Hole p-Ge Lasers and Masers for Spectroscopy of MultiQuantum-Well Heterostructures Ge/Ge1-xSix  

Science Journals Connector (OSTI)

Hot hole p-Ge masers and lasers operating in millimiter and ... of the tunable spectrometer with hote hole p-Ge emitter is demostrated by its application to ... multi-quantum-well (MQW) heterostructures (HS) Ge/Ge

V. V. Nikonorov; V. I. Gavrilenko

1995-01-01T23:59:59.000Z

187

Ge-nanocluster formation in Ge-doped polysilicon films under oxidation and heat treatment  

Science Journals Connector (OSTI)

An experimental investigation is conducted into the formation Ge nanoclusters by heat treatment of germanosilicate-glass... x Ge y O ...

A. A. Kovalevsky; A. S. Strogova; D. V. Plyakin

2009-03-01T23:59:59.000Z

188

Technology "Relay Race" Against Cancer | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Scientists in Technology "Relay Race" Against Cancer GE Scientists in Technology "Relay Race" Against Cancer GE technologies being developed to impact every stage of cancer...

189

Crowdsourcing Software Award | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Unveils High-Tech Superhero, GENIUS MAN MunichinteriorV 10 Years ON: From the Lab to the Real World in 10 Years 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

190

Work and Life Balance | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Achieving worklife balance is a much-talked-about topic. According to GE Healthcare's Kelly Piacsek, "GE hires people for what's inside their head-what they know-and the specific...

191

Hauptbewsserungs(ge)rinne f, (n)  

Science Journals Connector (OSTI)

Hauptbewsserungs(ge)rinne f, (n) ? supply (irrigation) channel [The main channel supplying water to the irrigation area

2013-01-01T23:59:59.000Z

192

Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots  

SciTech Connect

The lateral photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots of various sizes are investigated. We observed optical transition lines between the hole levels of quantum dots and electronic states of Si. This enabled us to construct a detailed energy level diagram of the electron-hole spectrum of the Si/Ge structures. It is shown that the hole levels of Ge quantum dots are successfully described by the 'quantum box' model using the actual sizes of Ge islands. It I found that the position of the longwavelength photosensitivity boundary of Si/Ge structures with Ge quantum dots can be controlled by changing the growth parameters.

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B., E-mail: igor@thermo.isp.nsc.ru [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2011-09-15T23:59:59.000Z

193

GE Appliances and Lighting Home Energy Solutions  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Appliances and Lighting GE Appliances and Lighting Home Energy Solutions Introduction to Devices with Brillion(tm) Technology Portfolio of Products 3 GE Appliances and Lighting All Rights Reserved Brillion(tm) Suite of Home Energy Solutions Nucleus(tm) Smart Meter Other Devices Internet IHD Other Devices PCT Non-Meter Solution GE DRMS GEA Server 4 GE Appliances and Lighting All Rights Reserved Nucleus(tm) energy manager with Brillion(tm) technology Consumers can reduce electric usage by an average of 5% per year. 5 GE Appliances and Lighting All Rights Reserved GE Profile Appliances enabled with Brillion(tm) technology Delayed defrost during peak Delayed starts and temperature adjustments during peak Delayed start until off- peak Reduced energy usage 60%, DR- enabled Reduced wattage during peak When coupled with the Nucleus and a TOU

194

High-resolution paleoceanography and modeling of abrupt warming events on greenhouse earth  

E-Print Network (OSTI)

A.M. , Schmidt, D.N. , Marsh, R. , and Maslin, M, (2010), COEdwards, N.R. , and R. Marsh, (2005), Uncertainties due toJ.D. , Edwards, N.R. , and R. Marsh, (2004), An efficient

Turner, Sandra Kirtland

2012-01-01T23:59:59.000Z

195

Abstract 354: Nuclear receptor expression atlas: A theragnostic targets for lung cancer patients  

Science Journals Connector (OSTI)

...Republic of. Introduction: The nuclear receptor (NR) superfamily...publicly available 129 microarray datasets. Results and Conclusions...quantitative real-time PCR to study nuclear receptor (NR) expression...two independent microarray datasets derived from 559 resected lung...

Yangsik Jeong; Yang Xie; Guanghua Xiao; Luc Girard; Woochang Lee; Carmen Behrens; Ignacio I. Wistuba; John D. Minna; and David J. Mangelsdorf

2011-04-15T23:59:59.000Z

196

Abstract P2-03-01: Computer extracted image texture features on T2-weighted MRI appear to correlate with nuclear morphologic descriptors from H&E-stained histopathology in estrogen receptor positive breast cancers  

Science Journals Connector (OSTI)

...Republic of. Introduction: The nuclear receptor (NR) superfamily...publicly available 129 microarray datasets. Results and Conclusions...quantitative real-time PCR to study nuclear receptor (NR) expression...two independent microarray datasets derived from 559 resected lung...

A Madabhushi; AN Basavanhally; S Doyle; T Wan; A Singanamalli; C Thompson; H Gilmore; D Plecha; and L Harris

2013-12-15T23:59:59.000Z

197

The multiple-point schemes of a finite curvilinear map of ...  

E-Print Network (OSTI)

?1. Nr. In this settingin fact, in a more general settingwe prove the following statements, which show that Mr and Nr behave like reasonable schemes of...

1910-30-30T23:59:59.000Z

198

Endogenous short RNAs generated by Dicer 2 and RNA-dependent RNA polymerase 1 regulate mRNAs in the basal fungus Mucor circinelloides  

E-Print Network (OSTI)

East Anglia, Norwich, NR4 7TJ, UK, tel. : 0044 1603 593221,fax: 0044 1603 592250, t.dalmay@uea.ac.uk September 16, 2011NR4 7TJ, UK, tel. : 0044 1603 593221, fax: 0044 1603 592250,

Grigoriev, Igor

2013-01-01T23:59:59.000Z

199

CCPPolicyBriefing International  

E-Print Network (OSTI)

: +44 (0)1603 593715 A: UEA, Norwich, NR4 7TJ Modelling international wind energy diffusion: www.uea.ac.uk/ccp T: +44 (0)1603 593715 A: UEA, Norwich, NR4 7TJ

Feigon, Brooke

200

Reports and other Publications  

Science Journals Connector (OSTI)

... . (New Delhi: Indian Council for Medical Research, 1953.) 1 rupee. [1611Norsk Polarinstitutt. Meddelelser Nr. 69 : ... Polarinstitutt. Meddelelser Nr. 69 : Norsk ishavsfangst. En fortegnelse over litteratur. Ved Adolf Hoel. Pp. 25. 2,50 ...

1954-01-30T23:59:59.000Z

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Reports and other Publications  

Science Journals Connector (OSTI)

... pour 1953. Pp. 248. (Paris: Libr. Gauthier-Villars, 1953.) [103Norsk Polarinstitutt. Meddelelser Nr. 69: ... Polarinstitutt. Meddelelser Nr. 69: Norsk Ishavsfangst, en fortegnelse over litteratur. Ved Adold Hoel. Pp. 23. 2.50 ...

1953-05-16T23:59:59.000Z

202

SREL Reprint #3036  

NLE Websites -- All DOE Office Websites (Extended Search)

Anglia, Norwich NR4 7TJ, UK 2Molecular Biology, Ume University, SE-901 87 Ume, Sweden 3Department of Molecular Biology, John Innes Centre, Norwich NR4 7UH, UK 4Department...

203

Official Publications Received  

Science Journals Connector (OSTI)

... , Nr. 3: The Godthaab Expedition 1928 The Hydrographic Vork and Material. By Eigel-Riis-Carstensen. Pp. 101+12 plates. 6.00 kr. Band 80, Nr. 1 ...

1936-08-01T23:59:59.000Z

204

An X-ray and neutron reflectometry study of PEG-like plasma polymer films  

Science Journals Connector (OSTI)

...23 39 131 An X-ray and neutron reflectometry study of plasma polymer films...QCM-D), X-ray and neutron reflectometry (NR). The combination...material properties. The use of neutron reflectometry (NR) in combination with...

2012-01-01T23:59:59.000Z

205

Efficiency of clay-TiO2 nanocomposites on the photocatalytic elimination of a model hydrophobic air pollutant  

E-Print Network (OSTI)

and by CONACYT (SEP-CONACYT Ciencia Bsica 2006, Grant nr.Estados Unidos para la Ciencia) through the 2006-Youngand by CONACYT (SEP- CONACYT Ciencia Bsica 2006, Grant nr.

Kibanova, Daria

2010-01-01T23:59:59.000Z

206

Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix  

SciTech Connect

Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2011-07-15T23:59:59.000Z

207

With Fond Greetings  

E-Print Network (OSTI)

love from Meggie; SENT TO: Miss I Coomlus; Ridge Farm; Stock Gaylard; [illegible] Nr.Sturminster Newton, Dorset...

Meggie [writer of accompanying material

2012-03-05T23:59:59.000Z

208

E-Print Network 3.0 - auftrag des umweltbundesamtes Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

1 2 3 4 5 > >> 1 Universitt Regensburg Auftrag Nr: ... Fakultt fr Chemie und Pharmazie eingegangen am: ... Summary: : ...

209

Quantitative relationships between occupant satisfaction and satisfaction aspects of indoor environmental quality and building design  

E-Print Network (OSTI)

In: Proceedings of Healthy Buildings, Vol III, pp. 393-397.Proceedings of Healthy Buildings, paper nr 747. Danielsson,

Frontczak, Monika; Schiavon, Stefano; Goins, John; Arens, Edward A; Zhang, Hui Ph.D; Wargocki, Pawel

2012-01-01T23:59:59.000Z

210

Ge atom distribution in buried dome islands  

SciTech Connect

Laser-assisted atom probe tomography microscopy is used to provide direct and quantitative compositional measurements of tri-dimensional Ge distribution in Ge dome islands buried by Si. Sub-nanometer spatial resolution 3D imaging shows that islands keep their facets after deposition of the Si cap, and that the island/substrate/Si cap interfaces are abrupt. The core of the domes contains 55% of Ge, while the island shell exhibits a constant composition of 15% of Ge. The {l_brace}113{r_brace} facets of the islands present a Ge enrichment up to 35%. The wetting layer composition is not homogeneous, varying from 9.5% to 30% of Ge.

Portavoce, A.; Berbezier, I.; Ronda, A.; Mangelinck, D. [CNRS, IM2NP, Case 142, 13397 Marseille Cedex 20 (France); Hoummada, K. [Aix-Marseille Universite, IM2NP, Case 142, 13397 Marseille Cedex 20 (France)

2012-04-16T23:59:59.000Z

211

membrane-ge | netl.doe.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

High-Performance Thin Film Composite Hollow Fiber Membranes for Post-Combustion Carbon Dioxide Capture Project No.: DE-FE0007514 GE Global Research is developing high...

212

Robotic Wind Turbine Inspection | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers. Currently, an inspector examines the...

213

Advanced Propulsion Systems | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe 2-7-7-v-laser-additive-manufacturing Revolutionizing the Age-Old Rules of Manufacturing ...

214

One Young World Summit |GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

photo of Valentina Bisio. About the Author Valentina Bisio EEDP Graduate GE O&G - Turbomachinery Solutions Valentina is an EEDP graduate. She completed job rotations in TMS...

215

Nanoscale Material Properties | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Nanotechnology Drives New Levels of Performance Nanotechnology Drives New Levels of Performance GE scientists are discovering new material properties at the nanoscale that drive...

216

Happy Pi Day! | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

is an area where GE researchers are intensifying their efforts. 3-D printing, an area of additive manufacturing, is providing new manufacturing freedom that was not possible with...

217

Patricia C. Irwin | Inventors | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

50 years as they seem now." -Patricia Irwin Creating a nonradioactive tracer for use in nuclear turbine testing. Re-establishing the dielectrics team to support GE businesses....

218

Abstract 1623: The spliceosome as a new therapeutic target for anticancer treatment  

Science Journals Connector (OSTI)

...Angeles, CA Upregulation of the orphan nuclear receptor NR4A3 in drug-induced apoptosis...genes, NR4A3, which encodes an orphan nuclear receptor, transcriptionally upregulated...co-expression neighborhood of NR4A3 in cancer datasets and found that it includes among other...

Virginie Quidville; Samar Alsafadi; Acha Goubar; Catherine Durieu; Sonia Baconnais; Eric LeCam; Philippe Dessen; Stephan Vagner; and Fabrice Andre

2011-04-15T23:59:59.000Z

219

This Week in The Journal F Cellular/Molecular  

E-Print Network (OSTI)

to the repulsive effects of semaphorin 3F (Sema3F). Ex- pression of NrCAM on rostrally project- ing thalamocortical on thalamocortical axons decreases after the axons reach the cortex, and NrCAM ex- pression then increases in deep, NrCAM was localized in dendritic spines of star py- ramidal cells in layer 4 of mouse visual cor- tex

Newman, Eric A.

220

Ge/SiGe quantum well devices for light modulation, detection, and emission.  

E-Print Network (OSTI)

??This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform. (more)

Chaisakul, Papichaya

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

GeSiO phase separation and Ge nanocrystal growth in  

Science Journals Connector (OSTI)

Ge:SiOx/SiO2 multilayers are fabricated using a new reactive dc magnetron sputtering approach. The influence of the multilayer stoichiometry on the ternary GeSiO phase separation and the subsequent size-controlled Ge nanocrystal formation is explored by means of x-ray absorption spectroscopy, x-ray diffraction, electron microscopy and Raman spectroscopy. The ternary system GeSiO reveals complete GeO phase separation at 400?C which does not differ significantly to the binary GeO system. Ge nanocrystals of 2 is present after annealing. Thus, the Ge nanocrystals become completely embedded in a stoichiometric silica matrix favouring the use for photovoltaic applications.

Manuel Zschintzsch; Christoph J Sahle; Johannes von Borany; Christian Sternemann; Arndt Mcklich; Alexander Nyrow; Alexander Schwamberger; Metin Tolan

2011-01-01T23:59:59.000Z

222

Hot Hole Effects in Strained Mqw Heterostructures Ge/Ge1?xSix  

Science Journals Connector (OSTI)

The paper deals with the first investigations of the 2D hot hole effects in multilayer heterostructures Ge/Ge1?xSix...aimed at the realization of dynamical heating and intraband population inversion of carriers i...

V. Ya. Aleshkin; A. A. Andronov; N. A. Bekin

1996-01-01T23:59:59.000Z

223

Surface Properties and Collective Modes of Electron-Hole Droplets in Ge, Si and Strained Ge  

Science Journals Connector (OSTI)

The surface structure, surface energy, and dipole barrier are obtained for condensed electron-hole droplets in Ge, Si, and strained Ge at zero temperature. The surface tension is...

T. L. Reinecke; F. Crowne; S. C. Ying

1974-01-01T23:59:59.000Z

224

GE Turbine Parts www.edisonmachine.com  

E-Print Network (OSTI)

vehicle: Has the code for a hydrogen car been cracked? World-first working eukaryotic cell mad from get swanky with the Equus Bass770 Zenos reveals details of the E10 roadster The Toyota FCV fuel cellGE Turbine Parts www.edisonmachine.com New authentic GE and Westinghouse Turbine Parts Muscle cars

Chiao, Jung-Chih

225

Modeling of GE Appliances: Final Presentation  

SciTech Connect

This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances DR-enabled appliances to provide benefits to the utility grid.

Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

2013-01-31T23:59:59.000Z

226

Growth and characterization of isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals  

SciTech Connect

Isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm{sup 3} volume. To our knowledge, we have grown the first {sup 70}Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be {approximately}2 {times} cm{sup {minus}3} which is two order of magnitude better that of {sup 74}Ge crystals previously grown by two different groups. Isotopic enrichment of the {sup 70}Ge and the {sup 74}Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

Itoh, K.

1992-10-01T23:59:59.000Z

227

Growth and characterization of isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals  

SciTech Connect

Isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm[sup 3] volume. To our knowledge, we have grown the first [sup 70]Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be [approximately]2 [times] cm[sup [minus]3] which is two order of magnitude better that of [sup 74]Ge crystals previously grown by two different groups. Isotopic enrichment of the [sup 70]Ge and the [sup 74]Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

Itoh, K.

1992-10-01T23:59:59.000Z

228

Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing  

SciTech Connect

A study of the bandgap character of compressively strained GeSn{sub 0.060-0.091}/Ge(001) quantum wells grown by molecular beam epitaxy is reported. The built-in strain in GeSn wells leads to an increased separation between L and {Gamma} conduction band minima. The prevalent indirect interband transitions in GeSn were probed by photoluminescence spectroscopy. As a result we could simulate the L-valley bowing parameter in GeSn alloys, b{sub L} = 0.80 {+-} 0.06 eV at 10 K. From this we conclude that even compressively strained GeSn/Ge(001) alloys could become direct band gap semiconductors at the Sn-fraction higher than 17.0 at. %.

Tonkikh, Alexander A. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Institute for Physics of Microstructures RAS, GSP-105, Nizhniy Novgorod (Russian Federation); Eisenschmidt, Christian; Schmidt, Georg [Institute of Physics, Martin Luther University Halle-Wittenberg, Von-Danckelmann-Platz 3 D-01620, Halle (Saale) (Germany); Talalaev, Vadim G. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany); Zakharov, Nikolay D.; Werner, Peter [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Schilling, Joerg [ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany)

2013-07-15T23:59:59.000Z

229

Ge-on-Si laser for silicon photonics  

E-Print Network (OSTI)

Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...

Camacho-Aguilera, Rodolfo Ernesto

2013-01-01T23:59:59.000Z

230

Science as Art: Jet Engine Airflow | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

used heavily by GE Aviation, GE Power & Water, and GE Oil & Gas for the design of turbomachinery, e.g. jet engines, gas turbines, etc. I had the chance to talk with Brian to...

231

Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure  

SciTech Connect

The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

Shibayama, Shigehisa [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan) [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)] [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2013-08-19T23:59:59.000Z

232

Engineer Receives UMass "Salute To Service" Award | GE Global...  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Engineer Honored by Alma Mater With Prestigious UMass "Salute To Service" Award GE Engineer Honored by Alma Mater With Prestigious UMass "Salute To Service" Award Dr. Marshall...

233

Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers  

SciTech Connect

Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-21T23:59:59.000Z

234

Das Mischungsverhalten von Nb3Sn mit Mo3Si, Mo3Ge und Nb3Ge  

Science Journals Connector (OSTI)

Mittels homogenisierter Sinter-und Schmelzproben wird die Bildung von lckenlosen Mischreihen zwischen Nb3Sn mit Mo3Si, Mo3Ge und Nb3Ge nachgewiesen.

H. Holleck; F. Benesovsky; H. Nowotny

1962-01-01T23:59:59.000Z

235

GE_Order_and_Compromise_Agreement.pdf  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Appliances, a Division of GE Appliances, a Division of General Electric Company, Respondent ) ) ) ) ) ) ORDER By the General Counsel, U.S. Department of Energy: Case Number: 2012-SE-1403 1. In this Order, I adopt the attached Compromise Agreement entered into between the U.S. Department of Energy ("DOE") and GE Appliances, a Division of General Electric Company ("Respondent"). The Compromise Agreement resolves the case initiated after DOE was informed, based on test results made available as a result of verification testing by the Association of Home Appliance Manufacturers ("AHAM"), that aGE refrigerator basic model may not meet the energy conservation standard set forth in 10 C.F.R. § 430.32(a). 2. DOE and Respondent have negotiated the terms of the Compromise Agreement that

236

12 GeV Upgrade | Jefferson Lab  

NLE Websites -- All DOE Office Websites

Science Science A Schematic of the 12 GeV Upgrade The 12 GeV Upgrade will greatly expand the research capabilities of Jefferson Lab, adding a fourth experimental hall, upgrading existing halls and doubling the power of the lab's accelerator. A D D I T I O N A L L I N K S: 12 GeV Home Public Interest Scientific Opportunities Hall D Status Updates Contacts Three-Year Accelerator Schedule 2014 - 2016 top-right bottom-left-corner bottom-right-corner 12 GeV Upgrade Physicists at Jefferson Lab are trying to find answers to some of nature's most perplexing questions about the universe by exploring the nucleus of the atom. Their goal is to answer such questions as: "What is the universe made of?" and "What holds everyday matter together?" In their search for answers, physicists smash electrons into atoms using

237

Working in the Cleanroom | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

The Dirt on the Cleanroom The Dirt on the Cleanroom In this short video, take a look inside the GE Global Research cleanroom and meet the team working in this 28,000-square-foot...

238

Metal MEMS Devices | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

MEMS: Inside the Global Research Cleanroom MEMS: Inside the Global Research Cleanroom This follow-up to our introduction to MEMS takes you inside the GE Global Research cleanroom...

239

Adam Rasheed | Inventors | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

A GE-NASA effort that developed the world's first and largest multi-tube pulse detonation engine that fires into a large-scale turbine-along with its deafening whine and...

240

Air Traffic Operations | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Manufacturing in Europe LucasMaltaairplaneV Green Skies of Brazil 2-7-7-v-laser-additive-manufacturing Revolutionizing the Age-Old Rules of Manufacturing 3-4-4-v GE...

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

MEXICO: GE Lets Mexicans Buy In  

Science Journals Connector (OSTI)

MEXICO: GE Lets Mexicans Buy In ... General Electric de Mexico, the country's biggest manufacturer of electrical products, had been one of the major Mexican firms still wholly owned by a foreign parent. ...

1968-07-15T23:59:59.000Z

242

Andrew Gorton | Inventors | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

"My goal is to make the world a better place by reducing the amount of water used during hydraulic fracturing, as well as continue to make GE products quieter, thereby reducing...

243

GE's Christine Furstoss Named to NACIE  

NLE Websites -- All DOE Office Websites (Extended Search)

companies like GE will need workers with new and advanced skills in areas like 3D printing and virtual design. It's all about growing a new generation of workforce skills,...

244

Jie Shen | Inventors | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Power Conversion in developing the novel medium-voltage drive MV6 series, from NTI (new technology introduction) to NPI (new product introduction) to product release and to...

245

Mess(ge)rinne f, (n)  

Science Journals Connector (OSTI)

Mess(ge)rinne f, (n), Messkanal m ? flume, sluice, measuring flume, measuring sluice, meter flume, measurement flume, launder, measurement sluice, meter sluice [A channel in which water i...

2013-01-01T23:59:59.000Z

246

GE Scientists Source Best Ideas at hackMIT | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

the Manufacturing Platform DirectWriteV Building More Intelligent GE Products with Additive Manufacturing MEMSVertical Next-gen RF MEMS Switch for a Smarter, Faster...

247

GE partners with Matthew Dear to create "Drop Science" | GE Global...  

NLE Websites -- All DOE Office Websites (Extended Search)

to Create "Drop Science" GE Partners with Matthew Dear to Create "Drop Science" Every machine has its own acoustic signature - a precise frequency that indicates whether that...

248

GE Opens New Global R&D Center in Brazil - GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Center to focus on subsea oil and gas research, capitalizing on 1.2 trillion offshore market opportunity Site will include "Crotonville" GE leadership facility to help...

249

Relaxation and recombination processes in Ge/SiGe multiple quantum wells  

SciTech Connect

The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at ? is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

Gatti, E., E-mail: gatti@mater.unimib.it; Giorgioni, A., E-mail: gatti@mater.unimib.it; Grilli, E., E-mail: gatti@mater.unimib.it; Guzzi, M., E-mail: gatti@mater.unimib.it [L-NESS and Universit di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy); Chrastina, D.; Isella, G. [L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy); Chernikov, A.; Kolata, K.; Bornwasser, V.; Kster, N. S.; Woscholski, R.; Chatterjee, S. [Faculty of Physics and Materials Sciences Center, Philipps-Universitt, Renthof 5, 35032 Marburg (Germany)

2013-12-04T23:59:59.000Z

250

Kohlenstoffhaltige ternre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternren Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner drften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

251

Influence of C on Ge incorporation in the growth of Ge-rich Ge1?x?ySixCy alloys on Si (100)  

Science Journals Connector (OSTI)

Ge-rich Ge1?x?ySixCy...alloys have been grown on Si (100) substrates by plasma-enhanced rapid thermal chemical vapor deposition. It is found that there is a strong suppressive effect of C on the Ge composition an...

X.B. Liu; L. Zang; S.M. Zhu; X.M. Cheng; P. Han; Z.Y. Luo; Y.D. Zheng

2000-04-01T23:59:59.000Z

252

New YorkPresbyterian and GE  

Science Journals Connector (OSTI)

...originate. Our collaboration with GE Medical Systems is based on having access to business skills and cutting-edge equipment that, in our judgment, will benefit our patients and increase our ability to provide cost-effective, high-quality care. We purchase from GE only technology that the hospital deems... To the Editor: In his Perspective article, Dr. Garber (Oct. 14 issue)1 appropriately alerts us to the potential for conflicts of interest when an academic medical center forms a relationship with a business company. New YorkPresbyterian Hospital is very ...

2005-02-03T23:59:59.000Z

253

GE Hitachi Nuclear Energy | Open Energy Information  

Open Energy Info (EERE)

GE Hitachi Nuclear Energy GE Hitachi Nuclear Energy Jump to: navigation, search Name GE Hitachi Nuclear Energy Place Wilmington, North Carolina Zip 28402 Sector Efficiency, Services Product GE Hitachi Nuclear Energy develops advanced light water reactors and offers products and services used by operators of boiling water reactor (BWR) nuclear power plants to improve efficiency and boost output. Coordinates 42.866922°, -72.868494° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.866922,"lon":-72.868494,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

254

Viscosity Measurement G.E. Leblanc  

E-Print Network (OSTI)

30 Viscosity Measurement G.E. Leblanc McMaster University R.A. Secco The University of Western Ontario 30.1 Shear Viscosity ............................................................. 30-l Newtonian and Non-Newtonian Fluids l Dimensions and Units of Viscosity l Viscometer Types l Capillary M. Kostic

Kostic, Milivoje M.

255

STATEMENT OF CONSIDERATIONS REQUEST BY GE CORPORATE RESEARCH & DEVELOPMENT (GE-CRD)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

CORPORATE RESEARCH & DEVELOPMENT (GE-CRD) CORPORATE RESEARCH & DEVELOPMENT (GE-CRD) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE-FC07- 96ID13406; W(A)-96-004; CH-0894 The Petitioner, GE Corporate Research & Development (GE-CRD) has requested a waiver of domestic and foreign patent rights for all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Electric Vehicle Program - Ultracapacitor/Battery Electronic Interface Project." The objective of the cooperative agreement is to develop prototype electronic interface hardware to verify the design of the power electronics and basic control strategy for an advanced electric vehicle drive line that uses ultracapacitors to load level the main storage battery. The

256

Defect luminescence in films containing Ge and GeO{sub 2} nanocrystals  

SciTech Connect

Amorphous SiO{sub x} alloys containing Ge or GeO{sub 2} nanocrystals are produced by dc-magnetron sputtering and controlled crystallization. The samples are investigated by Raman scattering, transmission electron microscopy, photoluminescence and excitation spectroscopy. Under UV excitation, both types of films luminesce around 3.1 eV, with identical PL line shapes and subnanosecond PL dynamics. The strongest PL intensity is found for the films containing FeO{sub 2} crystals and for the largest nanocrystals. These results are a clear indication that although the blue luminescence is without a doubt correlated with the formation of Ge (or GeO{sub 2}) nanocrystals, it is not produced by the radiative recombination of excitons confined in the nanocrystals. Possible mechanisms for the luminescence are discussed, including defects at the nanocrystal/matric interface or in the matrix itself.

Zacharias, M.; Atherton, S.J.; Fauchet, P.M.

1997-07-01T23:59:59.000Z

257

Silicon Carbides in the Cleanroom | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Clean Room: Silicon Carbides GE Global Research is working on nanoscale silicon carbide devices. Find out what we're doing. You Might Also Like 2-1-10-v-working-at-ge-resear...

258

The Majorana Ge-76 double-beta decay project  

SciTech Connect

The MAJORANA Project is a research and development activity set up to establish the feasibility and cost of a doublebetadecay experiment comprising a one-ton array of Ge detectors fabricated from germanium enriched to about 86% in Ge-76.

Avignone, Frank Titus [ORNL

2010-01-01T23:59:59.000Z

259

Conservation of bond lengths in strained Ge-Si layers  

Science Journals Connector (OSTI)

The combined techniques of x-ray-absorption fine structure and x-ray diffraction have been used to study the strain and bond distortions in epitaxial Ge-Si on Si(001). In a 31% Ge, 340- pseudomorphic Ge-Si film, the Ge-Ge and Ge-Si first-neighbor bond lengths have been found to be 2.440.02 and 2.380.02 , respectively. The lattice parameter perpendicular to the Ge-Si/Si(001) interface has been found to be a?=5.5520.002 , in agreement with the predictions of macroscopic elastic theory. These results show that the bond-length strain in the epitaxial layer appears in the second and higher coordination shells, rather than in the nearest-neighbor bond lengths, which remain the same as in unstrained Ge-Si. A microscopic model is presented that accounts for these findings.

J. C. Woicik; C. E. Bouldin; M. I. Bell; J. O. Cross; D. J. Tweet; B. D. Swanson; T. M. Zhang; L. B. Sorensen; C. A. King; J. L. Hoyt; P. Pianetta; J. F. Gibbons

1991-01-15T23:59:59.000Z

260

Tailoring the spin polarization in Ge/SiGe multiple quantum wells  

SciTech Connect

We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization.

Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario [LNESS-Dipartimento di Scienza dei Materiali, Universit degli Studi di Milano-Bicocca, I-20125 Milano (Italy); Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni [LNESS-Dipartimento di Fisica, Politecnico di Milano, I-20133 Milano (Italy); Trivedi, Dhara; Song, Yang [Department of Physics and Astronomy, University of Rochester, Rochester (United States); Li, Pengki [Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States); Dery, Hanan [Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 and Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States)

2013-12-04T23:59:59.000Z

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Microsoft Word - S09799_EnhancedMR.docx  

Office of Legacy Management (LM)

Domestic Well Data Domestic Well Data This page intentionally left blank DETECTION LIMIT PARAMETER LOCATION CODE UN- CERTAINTY ZONE COMPL FLOW REL. REPORT DATE: 3/7/2013 2:01 pm CLASSIC GROUNDWATER QUALITY DATA BY PARAMETER WITH ZONE (USEE201) FOR SITE RVT01, Riverton Processing Site UNITS QUALIFIERS: LAB DATA QA RESULT SAMPLE: DATE ID LOCATION TYPE NR N mg/L 0405 N001 06/13/2012 - - # 113 WL Alkalinity, Total (As CaCO3) NR N mg/L 0405 N001 12/03/2012 - - # 38 WL NR N mg/L 0422 N001 06/12/2012 - - # 168 WL NR N mg/L 0422 N001 12/03/2012 - - # 150 WL NR N mg/L 0430 N001 06/12/2012 - - # 147 WL NR N mg/L 0430 N001 12/03/2012 - - # 196 WL NR N mg/L 0436 N001 06/12/2012 - - # 167 WL NR N mg/L 0436 N001 12/03/2012 - - # 163 WL NR N mg/L 0460 N001 06/12/2012 - - # 149 WL NR N mg/L 0460 N001 12/03/2012

262

Bisphenol-A rapidly enhanced passive avoidance memory and phosphorylation of NMDA receptor subunits in hippocampus of young rats  

SciTech Connect

Bisphenol-A (BPA), an endocrine disruptor, is found to influence development of brain and behaviors in rodents. The previous study indicated that perinatal exposure to BPA impaired learning-memory and inhibited N-methyl-D-aspartate receptor (NMDAR) subunits expressions in hippocampus during the postnatal development in rats; and in cultured hippocampal neurons, BPA rapidly promotes dynamic changes in dendritic morphology through estrogen receptor-mediated pathway by concomitant phosphorylation of NMDAR subunit NR2B. In the present study, we examined the rapid effect of BPA on passive avoidance memory and NMDAR in the developing hippocampus of Sprague-Dawley rats at the age of postnatal day 18. The results showed that BPA or estradiol benzoate (EB) rapidly extended the latency to step down from the platform 1 h after footshock and increased the phosphorylation levels of NR1, NR2B, and mitogen-activated extracellular signal-regulated kinase (ERK) in hippocampus within 1 h. While 24 h after BPA or EB treatment, the improved memory and the increased phosphorylation levels of NR1, NR2B, ERK disappeared. Furthermore, pre-treatment with an estrogen receptors (ERs) antagonist, ICI182,780, or an ERK-activating kinase inhibitor, U0126, significantly attenuated EB- or BPA-induced phosphorylations of NR1, NR2B, and ERK within 1 h. These data suggest that BPA rapidly enhanced short-term passive avoidance memory in the developing rats. A non-genomic effect via ERs may mediate the modulation of the phosphorylation of NMDAR subunits NR1 and NR2B through ERK signaling pathway. - Highlights: > BPA rapidly extended the latency to step down from platform 1 h after footshock. > BPA rapidly increased pNR1, pNR2B, and pERK in hippocampus within 1 h. > ERs antagonist or MEK inhibitor attenuated BPA-induced pNR1, pNR2B, and pERK.

Xu Xiaohong, E-mail: xuxh63@zjnu.cn; Li Tao; Luo Qingqing; Hong Xing; Xie Lingdan; Tian Dong

2011-09-01T23:59:59.000Z

263

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*  

E-Print Network (OSTI)

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

Bowers, John

264

Discussion on the Low Temperature Magnetothermal Conductivity in Lightly Doped Ge(Sb) and Ge(As)  

Science Journals Connector (OSTI)

Some time ago we reported1) measurements of magnetothermal conductivity in n-type Ge in the temperature range 1.3?T?...1): For Ge(Sb) with the field Bll ...o, is negative, increases in magnitude approximatel...

Leif Halbo

1976-01-01T23:59:59.000Z

265

Ferromagnetic Mn5Ge3C0.8contacts on Ge: work function and specific contact resistivity  

Science Journals Connector (OSTI)

We report on the study of the electrical and magnetic properties of Mn5Ge3C0.8contacts deposited on highly doped n-Ge (1?0?0) as a potentially complementary metaloxidesemiconductor (CMOS)-compatible material system for spin injection into Ge. Mn5Ge3C0.8is a ferromagnet with a Curie temperature of 445K and with a resistivity that is comparable to highly doped Ge. We extract the work function of Mn5Ge3C0.8from metaloxidesemiconductor capacitance measurements and obtain a specific contact resistivity rC = 5.0 ? cm2from transmission-line measurements. We discuss possible origins of the large specific contact resistivity of Mn5Ge3C0.8on Ge.

I A Fischer; J Gebauer; E Rolseth; P Winkel; L-T Chang; K L Wang; C Srgers; J Schulze

2013-01-01T23:59:59.000Z

266

GE Wind Energy Germany | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Jump to: navigation, search Name GE Wind Energy Germany Place Salzbergen, Germany Zip 48499 Sector Wind energy Product Germany-based, division of GE Wind Energy wind turbine manufacturer and supplier. Coordinates 52.323136°, 7.347278° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":52.323136,"lon":7.347278,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

267

Stable, free-standing Ge nanocrystals  

SciTech Connect

Free-standing Ge nanocrystals that are stable under ambient conditions have been synthesized in a two-step process. First, nanocrystals with a mean diameter of 5 nm are grown in amorphous SiO{sub 2} by ion implantation followed by thermal annealing. The oxide matrix is then removed by selective etching in diluted HF to obtain free-standing nanocrystals on a Si wafer. After etching, nanocrystals are retained on the surface and the size distribution is not significantly altered. Free-standing nanocrystals are stable under ambient atmospheric conditions, suggesting formation of a self-limiting native oxide layer. For free-standing as opposed to embedded Ge nanocrystals, an additional amorphous-like contribution to the Raman spectrum is observed and is assigned to surface reconstruction-induced disordering of near-surface atoms.

Sharp, I.D.; Xu, Q.; Liao, C.Y.; Yi, D.O.; Beeman, J.W.; Liliental-Weber, Z.; Yu, K.M.; Zakharov, D.N.; Ager III, J.W.; Chrzan,D.C.; Haller, E.E.

2005-01-28T23:59:59.000Z

268

Role of nucleation sites on the formation of nanoporous Ge  

SciTech Connect

The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

2012-09-24T23:59:59.000Z

269

Suppression of Ge-O And Ge-N Bonding at Ge-HfO(2) And Ge-TiO(2) Interfaces By Deposition Onto Plasma-Nitrided Passivated Ge Substrates: Integration Issues Ge Gate Stacks Into Advanced Devices  

SciTech Connect

A study of changes in nano-scale morphology of thin films of nano-crystalline transition metal (TM) elemental oxides, HfO{sub 2} and TiO{sub 2}, on plasma-nitrided Ge(100) substrates, and Si(100) substrates with ultra-thin (-0.8 nm) plasma-nitrided Si suboxide, SiO{sub x}, x < 2, or SiON interfacial layers is presented. Near edge X-ray absorption spectroscopy (NEXAS) has been used to determine nano-scale morphology of these films by Jahn-Teller distortion removal of band edge d-state degeneracies. These results identify a new and novel application for NEXAS based on the resonant character of the respective O K{sub 1} and N K{sub 1} edge absorptions. This paper also includes a brief discussion of the integration issues for the introduction of this Ge breakthrough into advanced semiconductor circuits and systems. This includes a comparison of nano-crystalline and non-crystalline dielectrics, as well as issues relative to metal gates.

Lee, S.; Long, J.P.; Lucovsky, G.; Whitten, J.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

270

Interface and nanostructure evolution of cobalt germanides on Ge(001)  

SciTech Connect

Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Universit degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

2014-02-21T23:59:59.000Z

271

Elimination of GeO(2) And Ge(3)N(4) Interfacial Transition Regions And Defects at N-Type Ge Interfaces: a Pathway for Formation of N-MOS Devices on Ge Substrates  

SciTech Connect

The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant limitation on equivalent oxide thickness (EOT) scaling for Si complementary metal-oxide-semiconductor (CMOS) devices. This limitation is equally significant and limiting for Ge CMOS devices. Low-K Ge-based ITRs in Ge devices have also been shown to limit performance and reliability, particular for n-MOS field effect transistors. This article identifies the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs. This is shown to be an interfacial band alignment issue in which native Ge ITRs have conduction band offset energies smaller than those of TM dielectrics, and trap electrons for negative Ge substrate bias. This article also describes a novel remote plasma processing approach for effectively eliminating any significant native Ge ITRs and using a plasma-processing/annealing process sequence for bonding TM gate dielectrics directly to the Ge substrate surface.

Lucovsky, G.; Lee, S.; Long, J.P.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

272

BEFORE THE U.S. DEPARTMENT OF ENERGY  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

) ) Navien America, Inc. ) Case Number: 20 10-CE- 17 12 (Water heaters) ) ) NOTICE OF PROPOSED CIVIL PENALTY Date issued: September 8,201 0 Number of alleged violations: 13 Maximum possible assessment: $742,900 Proposed civil penalty: $94,900 The Office of the General Counsel of the U.S. Department of Energy (DOE) alleges that Navien America, Inc. (Navien) violated certain provisions of the Energy Policy and Conservation Act, 42 U.S.C. 5 6201 et seq., 10 C.F.R. Part 430, or both. Specifically, DOE alleges: 1. Navien America, Inc. manufactures or privately labels a variety of water heaters, including models CR- 180, CR- 180A, CR-2 10, CR-2 1 OA, CR-240, CR-240A, NR-180, NR-180A, NR-210, NR-21 OA, NR-240, and NR-240A. 2. These models have been in distribution in the U.S. for at least 365 days.

273

GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery  

Office of Science (SC) Website

GE Uses DOE Advanced Light Sources to Develop GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery Technology Discovery & Innovation Stories of Discovery & Innovation Brief Science Highlights SBIR/STTR Highlights Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 06.13.11 GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery Technology Company is constructing a new battery factory in Upstate New York that is expected to create 300+ jobs. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo GE's new Image courtesy of GE GE's new "Durathon(tm)" sodium metal halide battery. The story of American manufacturing over the past two decades has too often been a tale of outsourcing, off-shoring, and downsizing-not least in

274

ber die Thalliumgermanate Tl2Ge4O9 und Tl2Ge6O13  

Science Journals Connector (OSTI)

Nach Dehydratation des Germanat-Zeoliths Tl3HGe7O16 4 H2O bildet sich bei 650C das zu Me2Ge4O9 (Me=Na, K, Rb) isotype Thalliumtetragermanat. Durch Entwsserung bei 700C entsteht aus dem Zeolith ein stabiles ...

Penelope Papamantellos; A. Wittmann

1962-01-01T23:59:59.000Z

275

GE Wind Energy | Open Energy Information  

Open Energy Info (EERE)

Wind Energy Wind Energy Jump to: navigation, search Name GE Wind Energy Place Atlanta, Georgia Zip GA 30339 Sector Wind energy Product GE's wind energy division, formed as a result of the purchase of almost all of Enron Wind Corporation's assets. Provides power plant design, engineering and site selection, as well as operation and maintenance. Coordinates 33.748315°, -84.391109° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.748315,"lon":-84.391109,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

276

Messungen derK-Konversionskoeffizienten und der Aktivierungsquerschnitte der isomeren Atomkerne Se77m , Se79m , Ge75m und Ge77m  

Science Journals Connector (OSTI)

TheK-conversion coefficients ? K of the nuclear isomers Se77m , Se79m , Ge75m and Ge77m have been measured by d...

Hermann Weigmann

1962-01-01T23:59:59.000Z

277

Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces  

SciTech Connect

This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

1995-07-01T23:59:59.000Z

278

Dharma Samvarddhani Ragam: Madhyamavati (22nd Mela Janyam)  

E-Print Network (OSTI)

") , r S R-S ; nr || sn P r s R ; ; || Da nu ja Sam - - - Ma- rdda ni- - - 2. R ; R- R ; S || R ; rpM - R- ni - - s- r S R- sn sn nr || sn P r s R ; ; || - Da nu ja Sam - - - Ma- rdda ni- - - R , m R -M P- ni - - s- r S R- sn sn nr || rsnp ; r s R ; ; || - Da nu ja Sam - - - Ma- rdda ni- - - rm mppm R M P

Kalyanaraman, Shivkumar

279

BIG IMPROVEMENTS OF THE WEIL BOUND FOR ARTIN-SCHREIER CURVES  

E-Print Network (OSTI)

gives the estimate |Nr(f) - qr | (d - 1)(q - 1)q r 2 . This bound can be sharp in general, for instance to a somewhat better bound: |Nr(f) - qr | (d - 1)(q - 1) 2 [2q r 2 ], where [x] denotes the integer part the estimate |Nr(f) - qr | Cd,rq r+1 2 , where Cd,r is the constant Cd,r = r a=0 |a - 1| d - 2 + r - a r - a d

Wan, Daqing

280

Biofuel Research at Brazil Center of Excellence | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

do texto. Aproveitem. A misso do centro de excelncia de biocombustves da GE do Brasil aumentar a capacidade local de fornecer tecnologia na produo de biocombustves...

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
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We encourage you to perform a real-time search of NLEBeta
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281

Meeting Energy Needs in Brazil |GE Global Research  

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Brazil Looking a Decade Ahead: Electrical Power Generation in Brazil Ricardo Hernandez Pereira 2014.11.03 In the Bioenergy Systems Organization at GE Global Research - Rio de...

282

GE Technology to Help Canada Province Meet Growing Energy Needs  

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funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

283

Governor Cuomo, GE Announce Power Electronics Manufacturing Consortium  

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Governor Cuomo Announces 100 Businesses Led by GE to Join 500 Million Partnership with State to Develop Next-Generation Power Electronics, Creating Thousands of Jobs in Capital...

284

Technology makes reds "pop" in LED displays | GE Global Research  

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Televisions Research breakthrough will vastly improve color and crispness of images on LED devices NISKAYUNA, NY, July, 24, 2014 - GE announced today a research breakthrough that...

285

Titan propels GE wind turbine research into new territory | ornl...  

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Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

286

Heteroepitaxial Ge-on-Si by DC magnetron sputtering  

SciTech Connect

The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380C. Typical Stransky-Krastanov growth is observed at 410C. At lower temperatures (320C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

Steglich, Martin; Schrempel, Frank; Fchsel, Kevin; Kley, Ernst-Bernhard [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Strae 15, 07745 Jena (Germany)] [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Strae 15, 07745 Jena (Germany); Patzig, Christian; Berthold, Lutz; Hche, Thomas [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hlse-Strae 1, 06120 Halle (Germany)] [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hlse-Strae 1, 06120 Halle (Germany); Tnnermann, Andreas [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Strae 15, 07745 Jena (Germany) [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Strae 15, 07745 Jena (Germany); Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena (Germany)

2013-07-15T23:59:59.000Z

287

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

288

Effect of Ge-composition on the Gain of a Thin Layer Si 1-y Ge y Avalanche Photodiode  

Science Journals Connector (OSTI)

Gain calculation of Si 1-y Ge y n+-i-p+...avalanche photodiode (APD) is described for multiplication layer down to tens of nanometers c...

Kanishka Majumder; N. R. Das

2014-01-01T23:59:59.000Z

289

E-Print Network 3.0 - av mekanismer och Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Sweden Collection: Materials Science 4 Sammanfattar aktuell forskning Nr 6, 2005 BJRN BERG PER GUNDERSEN VERNON MEENTEMEYER Summary: har de senaste 15 ren arbetat med...

290

E-Print Network 3.0 - av tall och Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Databases and Resources 3 Sammanfattar aktuell forskning Nr 6, 2005 BJRN BERG PER GUNDERSEN VERNON MEENTEMEYER Summary: vi andelen tall,gran och lvtrd.Vi berk-...

291

276 VOLUME 13 | NUMBER 3 | MARCH 2007 NATURE MEDICINE Which papers have provided the most interesting recent advances in tuberculosis research? Which new discoveries  

E-Print Network (OSTI)

tuberculosis. Science 307, 223­227 (2005). Ghandi, N.R. et al. Extensively drug-resistant tuberculosis clinical trials." Philip Marsh, Health Prot

Cai, Long

292

E-Print Network 3.0 - adapting biodegradable oligopolyethylene...  

NLE Websites -- All DOE Office Websites (Extended Search)

Sciences and Ecology 4 Supplement to Chimica OggiCHEMISTRY TODAY Vol 25 nr 6 Green ChemistryIonic liquids Aquatic toxicity and biodegradation Summary: toxicity and...

293

E-Print Network 3.0 - als ursache eines Sample Search Results  

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Technologies and Information Sciences 7 Nr. 291 2010 11. Oktober 2010 Mehr Wrme vom Erdkern Summary: . Mittlerweile hat sie eine Stelle als Wissenschaftlerin an der...

294

Side 1 av 3 AoC1 underskelse hsten 2006 Innledende test  

E-Print Network (OSTI)

Side 1 av 3 AoC1 undersøkelse høsten 2006 ­ Innledende test Noter test-person-nr.her: [ _____ ] Du

Natvig, Lasse

295

Side 1 av 3 AoC1 underskelse hsten 2006 Avsluttende test  

E-Print Network (OSTI)

Side 1 av 3 AoC1 undersøkelse høsten 2006 ­ Avsluttende test Noter test-person-nr.her: [ _____ ] Du

Natvig, Lasse

296

DATE  

NLE Websites -- All DOE Office Websites (Extended Search)

The Advanced Test Reactor (ATR) uses the Naval Reactors (NR) Casks to transport test trains between the Naval Reactors Facility (NRF) Expended Core Facility and the ATR. The...

297

E-Print Network 3.0 - assessing socio-economic values Sample...  

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K., Thygesen, P., Christensen, J., 2002. (Socio-economic analysis of centralised Biogas Plants... , Rapport nr. 136 . 12;21 8. Socio economic analysis Introduction The ......

298

E-Print Network 3.0 - arven fra den Sample Search Results  

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Prvestationen Nr. 2, november 2002 Summary: W mllen har vinger fra den danske fabrik LM glasfiber. Vingerne mler 43,8 m. Nordex fundamentet er ogs... Nyt fra...

299

RESPONSE OF GLUTAMINE SYNTHETASE GENE TRANSCRIPTION AND ENZYME ACTIVITY TO EXTERNAL NITROGEN SOURCES IN THE DIATOM SKELETONEMA  

E-Print Network (OSTI)

). In Chlorella and other algae, NR is not induced in the presence of NH4 þ , but rapid synthesis occurs upon NO3

300

Dabbrook Services | Open Energy Information  

Open Energy Info (EERE)

Yarmouth, United Kingdom Zip: NR31 6PT Sector: Services Product: Provides design and engineering services, as well as the development and installation of power systems....

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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301

E-Print Network 3.0 - aus amorphem silizium Sample Search Results  

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AiF-Antrags-Nr Summary: amorphem Silizium eine hohe Langzeitstabilitt und hohe solare Wirkungsgrade von ber 10% auf... Dispersionsgalvanik.doc Seite 8 von 58 Im...

302

E-Print Network 3.0 - ausstellung im kronprinzenpalais Sample...  

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Beate - Institut fr Physik, Humboldt-Universitt zu Berlin Collection: Renewable Energy ; Physics ; Chemistry 83 Notiz Nr. 45 2010 14. Oktober Notizen aus der...

303

I N S M A L L I S L A N D S CLIMATE CHANGE  

E-Print Network (OSTI)

of East Anglia Norwich NR4 7TJ UK Tel: +44 (0)1603 593900 Fax: +44 (0)1603 593901 Designed by Rocket

Watson, Andrew

304

National Champions and the Two-Thirds Rule in EC Merger Control  

E-Print Network (OSTI)

Anglia, Norwich, NR4 7TJ, UK. www.ccp.uea.ac.uk t: +44 (0) 1603 593715 f: + 44(0) 1603 591622 ISSN 1745

Feigon, Brooke

305

E-Print Network 3.0 - analysis reveals potential Sample Search...  

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and Information Sciences 11 CCPPolicyBriefing December 2009 Summary: : +44 (0)1603 593715 A: UEA, Norwich, NR4 7TJ Merger Remedies versus Efficiency Defence: An...

306

Personal Carbon Trading: a critical examination ofproposals for the UK  

E-Print Network (OSTI)

Anglia Norwich NR4 7TJ, UK *Corresponding author: g.seyfang@uea.ac.uk Tel: +44(0)1603 592956 Fax: +44(0)1603

Watson, Andrew

307

ISSN 1745-9648 UK Merger Remedies under Scrutiny  

E-Print Network (OSTI)

, University of East Anglia, Norwich, NR4 7TJ, UK; t: +44 (0) 1603 593715, f: +44 (0) 1603 591622; m

Feigon, Brooke

308

How do regulated and voluntary carbon-offset schemes compare?  

E-Print Network (OSTI)

Anglia, Norwich NR4 7TJ, UK. Email: e.corbera@uea.ac.uk; Tel: +44-1603-592813; Fax: +44-1603-591170 #12

Watson, Andrew

309

Scira Offshore Energy | Open Energy Information  

Open Energy Info (EERE)

Scira Offshore Energy Jump to: navigation, search Name: Scira Offshore Energy Place: Lowestoft, Suffolk, United Kingdom Zip: NR32 1DE Sector: Wind energy Product: Developer of the...

310

Forecasting the price of natural rubber in Malaysia.  

E-Print Network (OSTI)

??The high volatility of the price of natural rubber (NR) posts a significant risk to producers, traders, consumers, and others involved in the production of (more)

In, Sakan

2012-01-01T23:59:59.000Z

311

E-Print Network 3.0 - anwendung auf supraleitende Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

code return 0; 3 C Programmierung - ... Source: Folgheraiter, Michele - Robotics Innovation Center, DFKI Bremen Collection: Engineering 11 Wissenschaftsmagazin Nr. 1 2009...

312

Y-12 Successfully Meets and Exceeds Defense Programs Goals During...  

National Nuclear Security Administration (NNSA)

News Releases Y-12 Successfully Meets and Exceeds Defense Programs ... Y-12 Successfully Meets and Exceeds Defense Programs Goals During FY 2010 applicationmsword icon NR-11-10...

313

NNSA Defense Programs Announces Quarterly Awards | National Nuclear...  

National Nuclear Security Administration (NNSA)

NNSA Production Office NPO News Releases NNSA Defense Programs Announces Quarterly Awards NNSA Defense Programs Announces Quarterly Awards applicationmsword icon NR-02-16.doc...

314

E-Print Network 3.0 - aluminium foil craters Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

41, Nr 2, 197209 (2006) Abstract available online at http:meteoritics.org Summary: -SIMS) analyses of crater residues on Al foils from impact experiments using material from...

315

E-Print Network 3.0 - amoeba osmotic shock Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Fachrichtung 6.1 Mathematik Summary: Preprint Nr. 259 Morphological Amoebas are Self-Snakes Martin Welk, Michael Breu and Oliver Vogel Saarbr... : February 19, 2010...

316

Self-diffusion in nanoscale structures measured by neutron reflectometry  

Science Journals Connector (OSTI)

Neutron reflectometry (NR) is an attractive tool for...100?x Zrx/57Fe100?x Zrx]10, were performed using neutron reflectivity. On the basis of the results...

Mukul Gupta; Thomas Gutberlet; Rachana Gupta

2005-01-01T23:59:59.000Z

317

Carbon-13 Labeled Polymers: An Alternative Tracer for Depth Profiling of Polymer Films and  

E-Print Network (OSTI)

and multilayers,1 including neutron (NR), X-ray, or resonant X-ray reflectometry,4,5 Rutherford backscattering,6

318

Secondary ion mass spectrometry depth profiling of amorphous polymer multilayers using O2  

E-Print Network (OSTI)

experimental techniques such as neutron or x-ray scattering reflectometry NR or XR ,9 scanning probe microscopy. In neutron scattering

319

E-Print Network 3.0 - af brint som Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Multidisciplinary Databases and Resources 10 30teknisk nyt nr. 5 -2005 Milj og energi Summary: brndselscellen som et batteri, der til stadighed oplades ved tilfrsel...

320

E-Print Network 3.0 - af vind analyse Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

procent af forbruget med vindkraft. Specielt i disse... at sikre mod strmudfald, nr vind- energi skal bidrage med halvdelen ... Source: Ris National Laboratory Collection:...

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

MU(& Ge-+v,  

Office of Legacy Management (LM)

fil fil MU(& Ge-+v, . !d R&arch & Development b This document consists of 6 Contract Ho. pages and - . --------------_____---. figures No.--~--of.--~~-_-copies, Series,&,, This subcontract entered into this 20 day 0fSepte~ber , 1943, by and between the University of Cliicago, a corporation not for pecuniary profit organized under the ICVS of the Stnto of Illinois, of Chicago, Illinois (hereinafter called "the Contractor") and Yiolverine Tube Divisionof Caluzet 2 Eecla Consolidated Co;-,er co, . a cor?orntion organized under the laws cf the State of l~lch~;an - of Detroit, I:ichigan --- (hersinnftcr called "the Subcontractoi"). WIEHEAS, tho Contractor has heretofore onterod into a contract v;ith the United States of America (rcprcse;!tcd by its dtlly designated

322

Charm photoproduction at 20 GeV  

Science Journals Connector (OSTI)

Sixty-two charm events have been observed in an exposure of the SLAC Hybrid Facility toa backward sacttered laser beam. Based on 22 neutral and 21 charged decays we have measured the charmed-meson lifetimes to be ?D0=(6.8-1.8+2.3)10-13 sec, ?D=(7.4-2.0+2.3)10-13 sec and their ratio ?D?D0=1.1-0.3+0.6. The inclusive charm cross section at a photon energy of 20 GeV has been measured to be 56-23+24 nb. Evidence is presented for a non-DD component to charm production, consistent with (3520)% ?c+ production and some D* production. We have found no unambiguous F decays.

K. Abe et al. ((SLAC Hybrid Facility Photon Collaboration))

1984-07-01T23:59:59.000Z

323

3 GeV Injector Design Handbook  

SciTech Connect

This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

Wiedemann, H.; /SLAC, SSRL

2009-12-16T23:59:59.000Z

324

Photoemission study of Si(111)-Ge(55) surfaces  

Science Journals Connector (OSTI)

Photoemission spectroscopy was used to study Si(111)-Ge(55) surfaces prepared by annealing Ge films deposited onto Si(111)-(77) substrates. The Si 2p core-level line shape was modified in going from (77) to (55) systems. By decomposing the spectra into bulk- and surface-shifted components the changes in line shape were identified as due to selective replacement of Si by Ge in different layers of the substrate, without any drastic change in the surface structure. The Ge 3d core-level line shape for the Si(111)-Ge(55) surface was also measured and compared with that for the Ge(111)-c(28) surface. These results are discussed in terms of models for the Si(111)-(77) structure. A surface state was observed on the Si(111)-Ge(55) surface, which gave rise to a metalliclike Fermi edge in the angle-integrated spectra; a similar surface state was observed on the Si(111)-(77) surface but not on the Ge(111)-c(28) surface.

T. Miller; T. C. Hsieh; T. -C. Chiang

1986-05-15T23:59:59.000Z

325

Vibrational dynamics in isotopically substituted vitreous GeO2  

Science Journals Connector (OSTI)

We report the polarized Raman spectra of vitreous Ge O216, Ge O218, Ge70O2, and Ge74O2. This yields the O16?O18 and Ge70?Ge74 isotopic shifts for nearly all vibrational modes of the pure glassy material. The shifts of the broad high-frequency (infrared-active) modes are as predicted by a nearest-neighbor central-force ideal continuousrandom-network model. The shift of the broad dominant Raman line indicates a small but significant dependence on the Ge mass, and this suggests an effect of disorder not included in the central-force theory. The narrow "defect" line at 530 cm-1 appears to be all oxygen motion, and is tentatively identified with a regular ring of bonds. The narrow line at 345 cm-1 is unique in that it exhibits very little oxygen shift; it seems to consist largely of Ge motion, for which we have no firm explanation.

F. L. Galeener; A. E. Geissberger; G. W. Ogar; Jr.; R. E. Loehman

1983-10-15T23:59:59.000Z

326

Secretary Chu Speaks at GE Solar Facility | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Chu Speaks at GE Solar Facility Chu Speaks at GE Solar Facility Secretary Chu Speaks at GE Solar Facility November 18, 2011 - 1:19pm Addthis Secretary Steven Chu's remarks, as prepared for delivery, at the General Electric Solar Facility in Arvada, Colorado. Thank you, Fred [Seymour], for the introduction. GE is a leader in energy innovation. Thomas Edison, the father of GE, once said, "I'd put my money on the sun and solar energy. What a source of power!" I imagine he would be amazed by the solar technology that is tested here. It's great to be in Colorado, a state that is at the forefront of the clean energy economy and has more solar jobs per capita than any other state[i]. I'm here at a critical time for America's energy future. It's a time of challenge, but it's also a time of opportunity.

327

GE Nucleus for Residential Energy Use Education, Home Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Nucleus for Residential Energy Use Education, Home Energy GE Nucleus for Residential Energy Use Education, Home Energy Management/Control, Residential Energy Integration Speaker(s): William Watts Date: August 4, 2011 - 12:00pm Location: 90-3122 Seminar Host/Point of Contact: Janie Page Home Energy Gateways offer a single point of access to the AMI Smart Meter into the home. The Nucleus is GE's home energy management gateway. The GE Nucleus securely communicates to a Smart Meter and delivers real-time whole home energy consumption data for display to the Consumer. The Consumer is able to visualize their energy usage habits on a Client that is connected via TLS encryption to the WiFi or Ethernet interface of the Nucleus. The Nucleus records history of the consumer's usage and cost data for tracking of energy consumption habits. GE has a suite of Smart Appliances that

328

GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Noncompliance Determination (2013-SE-4901) Noncompliance Determination (2013-SE-4901) GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) January 11, 2013 DOE issued a Notice of Noncompliance Determination to General Electric Lighting Solutions finding that various models of traffic signal modules do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. GE Lighting Solutions must immediately notify each person (or company) to whom GE Lighting Solutions distributed the noncompliant products that the products do not meet Federal standards. In addition, GE Lighting Solutions must provide to DOE documents and records showing the number of units GE Lighting Solutions distributed and to whom. The manufacturer

329

TEM studies of Ge nanocrystal formation in PECVD grown  

Science Journals Connector (OSTI)

We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicateoxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were annealed at temperatures ranging from 750 to 900?C for 5min under nitrogen atmosphere. The onset of formation of Ge nanocrystals, at 750?C, can be observed via high resolution TEM micrographs. The diameters of Ge nanocrystals were observed to be between 5 and 14nm. As the annealing temperature is raised to 850?C, a second layer of Ge nanocrystals forms next to the original precipitation band, positioning itself closer to the substrate SiO2 interface. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive x-ray analysis (EDAX) data all indicate that Ge nanocrystals are present in each layer.

S A?an; A Dana; A Aydinli

2006-01-01T23:59:59.000Z

330

On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer  

SciTech Connect

Structural models of growing Ge hut clusterspyramids and wedgesare proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)] [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

2013-09-14T23:59:59.000Z

331

Low-temperature microwave magnetoresistance of lightly doped p-Ge and p-Ge1?x Six  

Science Journals Connector (OSTI)

The magnetoresistance of a lightly doped p-Ge1?x Six alloy is studied in the range of compositions x = 12 at %. The results are compared with the available data for lightly doped p-Ge. The studie...

A. I. Veinger; A. G. Zabrodskii; T. V. Tisnek

2005-10-01T23:59:59.000Z

332

Formation of Nanocrystalline Germanium via Oxidation of Si?.??Ge?.?? for Memory Device Applications  

E-Print Network (OSTI)

In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si?.??Ge?.?? films. In dry oxidation, Ge was rejected from the growing ...

Kan, Eric Win Hong

333

Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals  

SciTech Connect

The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 C annealed samples.

Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

2013-12-04T23:59:59.000Z

334

Low temperature epitaxial growth of Ge on cube- textured Ni  

SciTech Connect

Quasi- single crystal Ge films were grown on [001]<010> textured Ni substrate at a temperature of 350 oC using an insulating buffer layer of CaF2. A direct deposition of Ge on Ni at 350 oC was shown to alloy with Ni. From x- ray pole figure analysis, it was shown that Ge grew epitaxially with the same orientation as CaF2 and the dispersions in the out- of- plane and in- plane directions were found to be 1.7 0.1o and 6 1o, respectively. In the out- of- plane direction, Ge[111]||CaF2[111]||Ni[001]. In addition, the Ge consisted of four equivalent in- plane oriented domains such that two mutually orthogonal directions: Ge 211 and Ge 011 are parallel to mutually orthogonal directions: Ni 110 and Ni 110 , respectively of the Ni(001) surface. This was shown to be originated from the four equivalent in- plane oriented domains of CaF2 created to minimize the mismatch strain between CaF2 and Ni in those directions.

GIARE, C [Rensselaer Polytechnic Institute (RPI); Palazzo, J [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; WANG, G [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

335

The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1? x (ZnSe)x, Ge-(Ge2)1?x (ZnSe)x, GaP-(Ge2)1?x (ZnSe)x, and Si-(Ge2)1?x (ZnSe)x  

Science Journals Connector (OSTI)

Based on morphological investigations, as well as on a study of the scanning patterns and diffraction spectra of the heterostructures GaAs-(Ge2)1?x (ZnSe)x, Ge-(Ge2)1?x (ZnSe)x, Ga...

A. S. Saidov; . A. Koshchanov; A. Sh. Razzakov

1998-01-01T23:59:59.000Z

336

GeV Emission from Collisional Magnetized Gamma Ray Bursts  

E-Print Network (OSTI)

Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

P. Mszros; M. J. Rees

2011-04-26T23:59:59.000Z

337

Intermixing between HfO{sub 2} and GeO{sub 2} films deposited on Ge(001) and Si(001): Role of the substrate  

SciTech Connect

Thermally driven atomic transport in HfO{sub 2}/GeO{sub 2}/substrate structures on Ge(001) and Si(001) was investigated in N{sub 2} ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO{sub 2}/Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO{sub 2}/GeO{sub 2} stacks are stable only if isolated from the Ge substrate.

Soares, G. V.; Krug, C. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Miotti, L.; Bastos, K. P.; Lucovsky, G. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States); Baumvol, I. J. R. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Universidade de Caxias do Sul, Caxias do Sul, Rio Grande do Sul 95070-560 (Brazil); Radtke, C. [Instituto de Quimica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil)

2011-03-28T23:59:59.000Z

338

Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures  

SciTech Connect

The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

Zhang, Rui [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan) [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)] [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

2013-02-25T23:59:59.000Z

339

GE Appliances: Proposed Penalty (2010-CE-2113) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Appliances: Proposed Penalty (2010-CE-2113) GE Appliances: Proposed Penalty (2010-CE-2113) GE Appliances: Proposed Penalty (2010-CE-2113) September 8, 2010 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Appliances failed to certify a variety of dehumidifiers as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Appliances: Proposed Penalty (2010-CE-2113) More Documents & Publications De'Longhi USA: Proposed Penalty (2010-CE-2114)

340

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Act One: NPCP (2013-CE-49001) Excellence Opto: Proposed Penalty (2013-CE-49002)

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Crystal Lake - GE Energy Wind Farm | Open Energy Information  

Open Energy Info (EERE)

GE Energy Wind Farm GE Energy Wind Farm Jump to: navigation, search Name Crystal Lake - GE Energy Wind Farm Facility Crystal Lake - GE Energy Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Resources Developer NextEra Energy Resources Location IA Coordinates 43.194201°, -93.860521° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.194201,"lon":-93.860521,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

342

Northern Colorado Wind Energy Center (GE) | Open Energy Information  

Open Energy Info (EERE)

Center (GE) Center (GE) Jump to: navigation, search Name Northern Colorado Wind Energy Center (GE) Facility Northern Colorado Wind Energy Center (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Developer NextEra Energy Energy Purchaser Xcel Energy Location Logan County CO Coordinates 40.974539°, -103.025336° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.974539,"lon":-103.025336,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

343

ORNL Partners with GE on New Hybrid | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

ORNL Partners with GE on New Hybrid ORNL Partners with GE on New Hybrid September 02, 2011 Water Heater About 400 jobs will soon be created at a Louisville General Electric plant at which a new electric water heater will be built. The technology was developed through a collaboration between ORNL and GE. The appliance will meet the new Energy Star water heater program criteria, which require future heaters to be twice as efficient as an electric storage water heater, positioning GE to be the first company to meet the energy-saving standard. According to DOE, using devices that meet these criteria should save American households approximately $780 million. ORNL's Patrick Hughes said the water heater will benefit consumers with its energy efficiency as well as its cost savings. "It will give you as much hot water and have the same recovery times so you

344

Intern Shares Insight Into Researchers' Minds |GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

rest of the year, I am a Ph.D. candidate at Virginia Tech, where my research is in aerodynamics and instrumentation development. At school, my work is supported by GE Power and...

345

A Deep Dive into the Subsea Environment | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

every step must be carried out in a safe manner to assure the risk of any serious accident is kept low, with very tight and conservative control. Filling the need GE...

346

Laser Guiding for GeV Laser-Plasma Accelerators  

E-Print Network (OSTI)

Overview of plasma-based accelerator concepts. IEEE Trans.using laser wake?eld accelerators. Meas. Sci. Technol. 12,for GeV laser-plasma accelerators. In Advanced Accelerator

Leemans, Wim; Esarey, Eric; Geddes, Cameron; Schroeder, C.B.; Toth, Csaba

2005-01-01T23:59:59.000Z

347

Making Silicon Carbide Devices in the Cleanroom | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Silicon Carbide Devices in the Cleanroom Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research...

348

Ge-on-Si laser operating at room temperature  

E-Print Network (OSTI)

Monolithic lasers on Si are ideal for high-volume and large-scale electronicphotonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

Liu, Jifeng

349

Helping Astronauts Back on Earth | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Helping Astronauts Back on Earth Helping Astronauts Back on Earth Vikas Revanna Shivaprabhu 2014.09.11 I received an email in early May from GE Global Research regarding a summer...

350

Take a Closer Look at the Brain | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Take a Closer Look at the Brain Take a Closer Look at the Brain Worldwide, more than 450 million people are living with compromised brain health. GE Global Research scientists,...

351

Be a part of something bigger than yourself GE Healthcare  

E-Print Network (OSTI)

, reliability, cost and manufacturability. Work is done using 3D CAD systems. Leading engineering tasks external covers, packaging, mechanisms, cables & harnesses, labelling, and packaging. Knowledge Healthcare, a $17 billion division of General Electric Company. GE Healthcare's broad range of products

Rimon, Elon

352

Cloud-Based Air Traffic Management Announcement | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Works to Bring Air Traffic Management Into "The Cloud" GE Works to Bring Air Traffic Management Into "The Cloud" A global leader in avionics and software development, the General...

353

Sandia National Laboratories: Northrop-Grumman, GE Partnerships...  

NLE Websites -- All DOE Office Websites (Extended Search)

Experience Northrop-Grumman, GE Partnerships Tap a Wide Range of Sandia Labs Experience Solar Energy Research Institute for India and the United States Kick-Off American Chemical...

354

Steve Duclos, Chief Scientist, GE Global Research, Research Priorities...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

essionC3Duclos-GE.pdf More Documents & Publications Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future Iowa lab gets critical...

355

Wind Turbine Transportation in Toyland | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Edison's Desk > Wind Turbine Transportation in Toyland Wind Turbine Transportation in Toyland Charles (Burt) Theurer 2011.05.27 GE doesn't just make wind turbines. We also deliver...

356

LNG Technology Is in the News | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

LNG Technology Is in the News LNG Technology Is in the News Laura Hudy 2013.02.07 My name is Laura Hudy, and I lead the Thermal Energy Systems team at GE Global Research. One of...

357

Ge quantum dots structural peculiarities depending on the preparation conditions  

Science Journals Connector (OSTI)

EXAFS and XANES spectroscopy methods have been applied in a study of the influence of the preparation conditions on the spatial and electronic structure of Ge/Si heterostructures.

Erenburg, S.

2003-08-28T23:59:59.000Z

358

Notrees 1B (GE Energy) Wind Farm | Open Energy Information  

Open Energy Info (EERE)

B (GE Energy) Wind Farm B (GE Energy) Wind Farm Jump to: navigation, search Name Notrees 1B (GE Energy) Wind Farm Facility Notrees 1B (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Duke Energy Carolinas LLC Developer Duke Energy Carolinas LLC Location TX Coordinates 31.9685988°, -99.9018131° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.9685988,"lon":-99.9018131,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

359

Enhanced Oil Recovery to Fuel Future Oil Demands | GE Global...  

NLE Websites -- All DOE Office Websites (Extended Search)

to Fuel Future Oil Demands Enhanced Oil Recovery to Fuel Future Oil Demands Trevor Kirsten 2013.10.02 I'm Trevor Kirsten and I lead a team of GE researchers that investigate a...

360

Pushing Super Materials to the Limit | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

to the Limit this Spring Break SpringBreakIt - Pushing Super Materials to the Limit this Spring Break Joseph Vinciquerra 2014.04.23 I lead GE's Materials Processing and Testing...

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Probing the Structure of {sup 74}Ge Nucleus with Coupled-channels Analysis of {sup 74}Ge+{sup 74}Ge Fusion Reaction  

SciTech Connect

We study the fusion reaction of the {sup 74}Ge+{sup 74}Ge system in term of the full order coupled-channels formalism. We especially calculated the fusion cross section as well as the fusion barrier distribution of this reaction using transition matrix suggested by recent Coulomb excitation experiment. We compare the results with the one obtained by coupling matrix based on pure vibrational and rotational models. The present coupled-channels calculations for the barrier distributions obtained using experiment coupling matrix is in good agreement with the one obtained with vibrational model, in contrast to the rotational model. This is indicates that {sup 74}Ge nucleus favor a spherical shape than a deformed shape in its ground state. Our results will resolve the debates concerning the structure of this nucleus.

Zamrun F, Muhammad [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia); Jurusan Fisika FMIPA, Universitas Haluoleo, Kendari, Sulawesi Tenggara, 93232 (Indonesia); Kasim, Hasan Abu [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia)

2010-12-23T23:59:59.000Z

362

Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer  

SciTech Connect

A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

Nie Tianxiao [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Chen Zhigang [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Zou Jin [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Centre for Microscopy and Microanalysis, University of Queensland, Brisbane, Queensland QLD 4072 (Australia)

2011-12-01T23:59:59.000Z

363

Ge interactions on HfO{sub 2} surfaces and kinetically driven patterning of Ge nanocrystals on HfO{sub 2}  

SciTech Connect

Germanium interactions are studied on HfO{sub 2} surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO{sub 2}. Germanium chemical vapor deposition at 870 K on HfO{sub 2} produces a GeO{sub x} adhesion layer, followed by growth of semiconducting Ge{sup 0}. PVD of 0.7 ML Ge (accomplished by thermally cracking GeH{sub 4} over a hot filament) also produces an initial GeO{sub x} layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge{sup 0}. Temperature programed desorption experiments of {approx}1.0 ML Ge from HfO{sub 2} at 400-1100 K show GeH{sub 4} desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO{sub 2} where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO{sub 2} and SiO{sub 2} allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO{sub 2} surfaces that is demonstrated.

Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States); Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78712-0240 (United States); Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States)

2006-01-15T23:59:59.000Z

364

16 - Microcavities and quantum cascade laser structures based on silicongermanium (SiGe) nanostructures  

Science Journals Connector (OSTI)

Abstract: This chapter discusses two types of Si-based light-emitting devices based on Ge quantum dots in optical microcavities and SiGe quantum cascade (QC) structures. After reviewing various solutions for Si-based light-emitting devices, the chapter describes the method to enhance light emission from Ge dots through embedding them into optical microcavities. It then reviews SiGe quantum cascade laser (QCL) structures on issues of material growth, electroluminescence from SiGe QC structures, n-type SiGe QC structures, and waveguides for SiGe QCLs.

J. Xia; Y. Shiraki; J. Yu

2011-01-01T23:59:59.000Z

365

A study of an Al-Ge3N4-Ge structure by the method of photo-capacitance-voltage characteristics  

Science Journals Connector (OSTI)

Results are reported of a study of a Ge-Ge3N4...interface by the method of capacitance-voltage characteristics, with the structure irradiated with photons of varied energy. The employed technique revealed trap le...

R. B. Dzhanelidze; M. B. Dzhanelidze; M. R. Katsiashvili

2000-10-01T23:59:59.000Z

366

ihLSEVIFR Optical Materials 3 (1994) 115--121 Absolute non-radiative energy conversion efficiency scanning  

E-Print Network (OSTI)

, in optical materials. 1. Introduction reported optical absorptions and optical-to-thermal energy conversion of transparent, high-qual- which PPES 11NR studies have been reported have itylaser materials, ~NR (A) the absence of irre- radiativecenters during the quadrature scan, as corn- producible thermal resistances

Mandelis, Andreas

367

Prometheus Reactor I&C Software Development Methodology, for Action  

SciTech Connect

The purpose of this letter is to submit the Reactor Instrumentation and Control (I&C) software life cycle, development methodology, and programming language selections and rationale for project Prometheus to NR for approval. This letter also provides the draft Reactor I&C Software Development Process Manual and Reactor Module Software Development Plan to NR for information.

T. Hamilton

2005-07-30T23:59:59.000Z

368

Science Advisory Board Office of the Administrator  

E-Print Network (OSTI)

created by legumes, and the combustion of fossil fuels. · Much of the nr used to ensure a plentiful supply of food, fiber and biofuel is released to the environment, as is the nr formed during fossil fuel, reactive nitrogen is associated with harmful human health effects caused by air pollution and drinking

Pasternack, Gregory B.

369

SUBCHAPTER All INITIAL STATEMENT OF REASONS  

E-Print Network (OSTI)

", 31 October 2011 NR COVERED PROCESSES CASE Initiative "Supermarket Refrigeration", October Bulletin ­ Insulation Systems, Johns Manville CORBOND III® Spray Foam Air Barrier Advantage, IST11007R Systems, STS Coatings, February 6, 2012 NR ENVELOPE Prototype Building Costs ­ Air Barriers

370

SYT-SSX1 and SYT-SSX2 Interfere with Repression of E-Cadherin by Snail and Slug: A Potential Mechanism for Aberrant Mesenchymal to Epithelial Transition in Human Synovial Sarcoma  

Science Journals Connector (OSTI)

...indicate this fact. 1 dos Santos NR, de Bruijn DRH, Geurts...A, Perez-Moreno MA, Rodrigo I, et al. The transcription...29 de Bruijn DRH, dos Santos NR, Thijssen J, et al...Perez-Moreno MA, Locascio A, Rodrigo I, et al. A new role...

Tsuyoshi Saito; Makoto Nagai; and Marc Ladanyi

2006-07-15T23:59:59.000Z

371

Ris-R-Report Sammenfatning af EFP07 Metoder til  

E-Print Network (OSTI)

kortlægning af vindforhold i komplekst terræn" granted by the Danish Energy Agency. References to reports-87-550-3842-4 Kontrakt nr.: ENS-33033-0062 Gruppens reg. nr.: 1110058-01 Sponsorship: Energistyrelsen, Danish Energy Agency, Vestas Technology R&D Forside : Billede af Bolund Sider: 8 Tabeller: Referencer:6 Afdelingen

372

Reports and other Publications  

Science Journals Connector (OSTI)

... . (Copenhagen: Biocentralen, Danish Society of Biotechnical Industry and Research, 1968.) [216Norsk Polarinstitutt. Skrifter Nr. 143: Vascular Plants from the Northern Part of Nordaustlandet, Svalbard ... Nr. 144: The Macrolichens of Alaska. By Hildur Krog. Pp.180. (Oslo: Norsk Polarinstitutt, 1968.) [216

1968-07-20T23:59:59.000Z

373

Reports and other Publications  

Science Journals Connector (OSTI)

... 'Encouragement de la Recherche Scientifique dans 1'Industrie et 1'Agriculture, 1964.)\t[297Norsk Polarinstitutt. Polarhandbok Nr. 1: Svalbards Flora. Av Olaf Rnning. Pp.123. ( ... . Polarhandbok Nr. 1: Svalbards Flora. Av Olaf Rnning. Pp.123. (Oslo: Norsk Polarinstitutt, 1964.) [297

1964-09-05T23:59:59.000Z

374

Reports and other Publications  

Science Journals Connector (OSTI)

... 5 plates. (Bruxelles: Institute Royal des Sciences Naturelles de Belgique, 1954.) [55Norsk Polarinstitutt. Skrifter Nr. 104 : Tidal Observations in the Arctic, 1946-1952. By ... i+ 823-972. (Wellington : Royal Society of New Zealand, 1955.) [175Norsk Polarinstitutt. Meddelelser Nr. 77 : De Gamle Trankokerier p Vestspitsbergens Nordvesthj0rne og den Formodede ...

1955-07-02T23:59:59.000Z

375

Supercritical Fluid Extraction of Wood Pulps  

Science Journals Connector (OSTI)

......capillary column inlet system which was main tained...great concern in this study because (a) their relative...McNally and J.R. Wheeler. J. Chromatogr. 447...Chaplin, and N.R. Foster. J. Supercrit. Fluids...Wells, and N.R. Foster. J. Supercrit. Fluids......

A.J. Sequeira; L.T. Taylor

1992-10-01T23:59:59.000Z

376

(SSS)Project Dashboard 2014-09-25.xls  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

G 1.05 1.05 4 EM CH2M Hill Plateau Remediation Company 15-D-401 KW Basin Sludge Removal Project 308,273,000 308,273,000 R NR NR 5 EM CH2M Hill - B&W West Valley,...

377

Centennial-scale analysis of the creation and fate of reactive nitrogen in China (19102010)  

Science Journals Connector (OSTI)

...economic sector fossil fuel con-sumption, NOx...the number of organ-isms is replaced by the...of Nr creation (1952 prices) Factors Definition...intensity (T) Fossil fuel consumption per unit GDP...of Nr creation (1952 prices) Factor 2020 2030 2050...

Shenghui Cui; Yalan Shi; Peter M. Groffman; William H. Schlesinger; Yong-Guan Zhu

2013-01-01T23:59:59.000Z

378

Inter-college program between Colleges of Life Sciences & Agriculture and Engineering & Physical Sciences  

E-Print Network (OSTI)

OR _____________ NR 527 Forest Ecology (fall) OR BIOL 541 General Ecology (fall/spring, WI 17. NR 501 Studio Soils. Geology course (ESCI 401, 402 or 409) _____________ 8. Statistics course (MATH 644 or BIOL 528 _____________ BIOL 411 Principles of Biology I BIOL 412 Principles of Biology II PBIO 412 Introductory Botany ZOOL

Pringle, James "Jamie"

379

Tutorium Alte Geschichte Infoblatt 5: Einfhrung in die Numismatik A) Mnzen als Quellen bieten Hinweise  

E-Print Network (OSTI)

/Ort/Prägeherr, Nummer (b. Beschreibungen) o.Tafel (b. Fotos) (Achtung: nur ein Teil der in den Editionsreihen ein ,cf. pl...' = ,siehe Tafel...') - RIC Augustus Nr.10 [= Angaben zu einer Münze des Augustus.7 auf Tafel 24] - KO 93 V, Tafel 25 [= ''Die römische Münze'', Bild Münze Nr. 93/Vorderseite (,R

Schubart, Christoph

380

J. Phycol. 38, 971982 (2002) FIELD ASSAYS FOR MEASURING NITRATE REDUCTASE ACTIVITY IN ENTEROMORPHA SP.  

E-Print Network (OSTI)

and subsequent storage at 80 C preserved NR activity and allowed for later laboratory use of the optimized.; nitrate reductase; macroalgae; Mobile Bay; Ulva sp. Abbreviation: ASW, artificial seawater; FSW, filtered seawater; NR, nitrate reductase Macroalgal production is frequently limited by the availability

Sherman, Tim

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

SIMS depth profiling of deuterium labeled polymers in polymer multilayers  

E-Print Network (OSTI)

. Existing experimental techniques such as forward recoil spectrometry (FRES) and neutron reflectometry (NR such as neutron reflectome- try (NR), forward recoil spectrometry (FRES), and secondary ion mass spectrometry) has a much higher scattering length density for coherent scattering of neutrons than protium (H

382

On the Al-Si, Al-Ge, and Al-Ge-Si systems and their application to brazing in high power semiconductor devices  

Science Journals Connector (OSTI)

Results of the Smith thermal analysis studies13 of the Al-Si, Al-Ge, and Al-Ge-Si systems are presented and compared with ... . Isothermal and vertical sections for the Al-Ge-Si system, computed from thermodynami...

F. H. Hayes; R. D. Longbottom; E. Ahmad; G. Chen

1993-08-01T23:59:59.000Z

383

Electron spin resonance observation of an interfacial Ge  

Science Journals Connector (OSTI)

Using electron spin resonance (ESR), we report on the observation of a first Ge dangling bond (DB)-type interface defect in the SiO2/(100)GexSi1?x/SiO2/(100)Si heterostructure manufactured by the condensation technique. The center, exhibiting monoclinic-I (C2v) symmetry with principal g values g1 = 2.0338 0.0003, g2 = 2.0386 0.0006, g3 = 2.0054 is observed in maximum densities of ~6.8 ? 1012cm?2 of the GexSi1?x/SiO2 interface for x~0.7, the signal disappearing for x outside the 0.450.93 range. The notable absence of interfering Si Pb-type centers enables unequivocal spectral analysis. Collectively, the combination of all data leads to depicting the defect as a Ge Pb 1-type center, i.e.not a trigonal basic Ge Pb(0)-type center (). Understanding the modalities of the defect's occurrence may provide an insight into the thus far elusive role of Ge DB defects at Ge/insulator interfaces, and widen our understanding of interfacial DB centers in general.

A Stesmans; P Somers; V V Afanas'ev

2009-01-01T23:59:59.000Z

384

Workbook Contents  

U.S. Energy Information Administration (EIA) Indexed Site

Monthly","9/2013","1/15/1981" Monthly","9/2013","1/15/1981" ,"Release Date:","11/27/2013" ,"Next Release Date:","Last Week of December 2013" ,"Excel File Name:","pet_move_netr_d_r10-z0p_vnr_mbbl_m.xls" ,"Available from Web Page:","http://www.eia.gov/dnav/pet/pet_move_netr_d_r10-z0p_vnr_mbbl_m.htm" ,"Source:","Energy Information Administration" ,"For Help, Contact:","infoctr@eia.gov" ,,"(202) 586-8800",,,"11/25/2013 11:09:56 AM" "Back to Contents","Data 1: East Coast (PADD 1) Net Receipts of Crude Oil and Petroleum Products by Pipeline, Tanker, and Barge" "Sourcekey","MTTNRP11","MCRNRP11","MPEMNP11","MPPNRP11","MLPNRP11","METNRP11","MPRNRP11","MBNNRP11","MBINRP11","MUONRP11","MBCNRP11","MO1NR_R10-Z0P_1","M_EPOBGRR_VNR_R10-Z0P_MBBL","MO3NR_R10-Z0P_1","MO4NR_R10-Z0P_1","MO2NR_R10-Z0P_1","MO5NR_R10-Z0P_1","MO6NR_R10-Z0P_1","MO7NR_R10-Z0P_1","MO9NR_R10-Z0P_1","M_EPOOR_VNR_R10-Z0P_MBBL","M_EPOOXE_VNR_R10-Z0P_MBBL","M_EPOORD_VNR_R10-Z0P_MBBL","M_EPOORO_VNR_R10-Z0P_MBBL","MGFNRP11","MGRNRP11","MG1NR_R10-Z0P_1","M_EPM0RO_VNR_R10-Z0P_MBBL","MG4NR_R10-Z0P_1","MG5NR_R10-Z0P_1","M_EPM0CAL55_VNR_R10-Z0P_MBBL","MG6NR_R10-Z0P_1","MGANRP11","MKJNRP11","MKENRP11","MDINRP11","MD0NR_R10-Z0P_1","MD1NR_R10-Z0P_1","MDGNRP11","MRENRP11","MPFNRP11","MPNNR_R10-Z0P_1","MPONR_R10-Z0P_1","MNSNRP11","MLUNRP11","MWXNRP11","MAPNRP11","MMSNRP11"

385

Workbook Contents  

U.S. Energy Information Administration (EIA) Indexed Site

Annual",2012,"6/30/1981" Annual",2012,"6/30/1981" ,"Release Date:","9/27/2013" ,"Next Release Date:","9/26/2014" ,"Excel File Name:","pet_move_netr_d_r10-z0p_vnr_mbbl_a.xls" ,"Available from Web Page:","http://www.eia.gov/dnav/pet/pet_move_netr_d_r10-z0p_vnr_mbbl_a.htm" ,"Source:","Energy Information Administration" ,"For Help, Contact:","infoctr@eia.gov" ,,"(202) 586-8800",,,"11/25/2013 11:09:55 AM" "Back to Contents","Data 1: East Coast (PADD 1) Net Receipts of Crude Oil and Petroleum Products by Pipeline, Tanker, and Barge" "Sourcekey","MTTNRP11","MCRNRP11","MPEMNP11","MPPNRP11","MLPNRP11","METNRP11","MPRNRP11","MBNNRP11","MBINRP11","MUONRP11","MBCNRP11","MO1NR_R10-Z0P_1","M_EPOBGRR_VNR_R10-Z0P_MBBL","MO3NR_R10-Z0P_1","MO4NR_R10-Z0P_1","MO2NR_R10-Z0P_1","MO5NR_R10-Z0P_1","MO6NR_R10-Z0P_1","MO7NR_R10-Z0P_1","MO9NR_R10-Z0P_1","M_EPOOR_VNR_R10-Z0P_MBBL","M_EPOOXE_VNR_R10-Z0P_MBBL","M_EPOORD_VNR_R10-Z0P_MBBL","M_EPOORO_VNR_R10-Z0P_MBBL","MGFNRP11","MGRNRP11","MG1NR_R10-Z0P_1","M_EPM0RO_VNR_R10-Z0P_MBBL","MG4NR_R10-Z0P_1","MG5NR_R10-Z0P_1","M_EPM0CAL55_VNR_R10-Z0P_MBBL","MG6NR_R10-Z0P_1","MGANRP11","MKJNRP11","MKENRP11","MDINRP11","MD0NR_R10-Z0P_1","MD1NR_R10-Z0P_1","MDGNRP11","MRENRP11","MPFNRP11","MPNNR_R10-Z0P_1","MPONR_R10-Z0P_1","MNSNRP11","MLUNRP11","MWXNRP11","MAPNRP11","MMSNRP11"

386

Cedar Creek Wind Farm I (GE) | Open Energy Information  

Open Energy Info (EERE)

GE) GE) Jump to: navigation, search Name Cedar Creek Wind Farm I (GE) Facility Cedar Creek Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Babcock & Brown/BP America Developer Babcock & Brown/BP America Energy Purchaser Xcel Energy Location Weld County east of Grover CO Coordinates 40.873578°, -104.07825° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.873578,"lon":-104.07825,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

387

Greenhouse Gas Services AES GE EFS | Open Energy Information  

Open Energy Info (EERE)

Greenhouse Gas Services AES GE EFS Greenhouse Gas Services AES GE EFS Jump to: navigation, search Name Greenhouse Gas Services (AES/GE EFS) Place Arlington, Virginia Zip 22203-4168 Product Develop and invest in a range of projects that reduce greenhouse gas emissions that produce verified GHG credits. Coordinates 43.337585°, -89.379449° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.337585,"lon":-89.379449,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

388

Top of the World (GE) | Open Energy Information  

Open Energy Info (EERE)

Top of the World (GE) Top of the World (GE) Facility Top of the World (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Duke Energy Carolinas LLC Developer Duke Energy Carolinas LLC Energy Purchaser PacifiCorp Location 4 miles northeast of Glenrock WY Coordinates 42.914132°, -105.691223° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.914132,"lon":-105.691223,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

389

NETL: News Release - GE Sets Benchmarks for Fuel Cell Performance  

NLE Websites -- All DOE Office Websites (Extended Search)

August 8, 2005 August 8, 2005 GE Sets Benchmarks for Fuel Cell Performance Achievements Move Efficient, Clean SOFC Technology Closer to Mainstream Energy Markets TORRANCE, CA - In the race to speed solid oxide fuel cell (SOFC) technology out of niche markets and into widespread commercial use, GE Hybrid Power Generation Systems has kicked fuel cell performance into high gear. Recent advancements have dramatically improved baseline cell performance and accelerate GE's prospects for achieving the system efficiency and cost objectives of DOE's Solid State Energy Alliance (SECA) program. Packing more power into smaller volumes is one of the breakthroughs needed to reduce the cost and expand the use of efficient, environmentally friendly fuel cells. But increasing power density isn't the only goal; as power density increases, fuel cells must continue to efficiently and reliably convert fuel to electric power.

390

Tunneling states in vitreous GeO2s  

Science Journals Connector (OSTI)

Ultrasonic measurements of the attenuation and the velocity variation have been carried out in amorphous GeO2 at low temperature (0.310 K) and high frequencies (80210 MHz). From numerical fits to the tunneling model, the typical parameters of the tunneling states (TS) were determined and compared to those found for vitreous SiO2 . The study reveals that in a-GeO2 , which is considered as a close structural analog to a-SiO2 , although the density of states is found to be very similar in both materials, the coupling between the TS and the phonons is significantly smaller. In the model of coupled tetrahedra as the origin of the TS, this difference can be understood in view of the fact that numerical calculations about the vibrational characteristics of network amorphous solids indicate that the tetrahedra are more decoupled in vitreous GeO2 than in vitreous silica.

Christiane Laermans; Veerle Keppens; Robert Weeks

1997-02-01T23:59:59.000Z

391

DATE  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0 0 SECTION A. Project Title: Test Reactor Cask Implementation. SECTION B. Project Description: This proposed action is a process and facility modification. Background / Purpose & Need The Advanced Test Reactor (ATR) uses the Naval Reactors (NR) Casks to transport test trains between the Naval Reactors Facility (NRF) Expended Core Facility and the ATR. The Naval Reactor (NR) Casks, however, are approaching the end of their design life. In 1997, Bettis initiated a contract for construction of the NR Cask replacement, the Test Reactor Cask (TRC). The TRC is a revised and updated design of the NR cask and will be more robust structurally and provide more shielding than the current NR Casks. Construction of two TRCs is nearly finished and the INL must now modify the ATR facility and update ATR safety

392

Self-interaction-free density-functional theoretical study of the electronic structure of spherical and vertical quantum dots  

E-Print Network (OSTI)

ca qu T nte pu ef pt pro si sc st em l n an d ith r ity along the vertical direction. Due to such strong confine- PHYSICAL REVIEW B, VOLUME 63, 045317atoms. The number of electrons in a quantum dot N can be controlled experimentally, allowing..., the total energy of a 3D spherical har- monic oscillator is Enrlm5S 2nr1l1 3 2 Dv5S N1 3 2 Dv , ~40! where nr50,1,2,3, . . . , and N52nr1l . We use the desig- nation (nr ,l) to denote the energy level with the radial quan- tum numbers nr and the orbital...

Jiang, T. F.; Tong, Xiao-Min; Chu, Shih-I

2001-01-09T23:59:59.000Z

393

Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures  

SciTech Connect

The results of a study of the spectral and temporal characteristics of the photoluminescence (PL) from multilayer structures with self-assembled Ge(Si) islands grown on silicon and 'silicon-on-insulator' substrates in relation to temperature and the excitation-light wavelength are presented. A substantial increase in island-related PL intensity is observed for structures with Ge(Si) islands grown on silicon substrates upon an increase in temperature from 4 to 70 K. This increase is due to the diffusion of nonequilibrium carriers from the silicon substrate into the active layer with the islands. In this case, a slow component with a characteristic time of {approx}100 ns appears in the PL rise kinetics. At the same time, no slow component in the PL rise kinetics and no rise in the PL intensity with increasing temperature are observed for structures grown on 'silicon-on-insulator' substrates, in which the active layer with the islands is insulated from the silicon substrate. It is found that absorption of the excitation light in the islands and SiGe wetting layers mainly contributes to the excitation of the PL signal from the islands under sub-bandgap optical pump conditions.

Yablonskiy, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Baidakova, N. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Novikov, A. V. [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation)] [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation); Lobanov, D. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2013-11-15T23:59:59.000Z

394

Cedar Creek Wind Farm II (GE) | Open Energy Information  

Open Energy Info (EERE)

Cedar Creek Wind Farm II (GE) Cedar Creek Wind Farm II (GE) Jump to: navigation, search Name Cedar Creek Wind Farm II (GE) Facility Cedar Creek II (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner BP Wind Energy Developer BP Wind Energy Energy Purchaser Xcel Energy Location Weld County CO Coordinates 40.868652°, -104.092398° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.868652,"lon":-104.092398,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

395

7-GeV Advanced Photon Source Conceptual Design Report  

SciTech Connect

During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

Not Available

1987-04-01T23:59:59.000Z

396

12 GeV detector technology at Jefferson Lab  

SciTech Connect

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Leckey, John P. [Indiana U.

2013-04-01T23:59:59.000Z

397

12 GeV detector technology at Jefferson Lab  

SciTech Connect

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Leckey, John P. [Indiana University, Bloomington, IN 47405 (United States); Collaboration: GlueX Collaboration

2013-04-19T23:59:59.000Z

398

Charm Photoproduction Cross Section at 20 GeV  

Science Journals Connector (OSTI)

Forty-seven charm events have been observed in an exposure of the SLAC Hybrid Facility bubble chamber to a 20-GeV backward-scattered laser beam. Thirty-seven events survive all the necessary cuts imposed. Based on this number the total charm cross section is calculated to be 63-28+33 nb.

K. Abe et al. ((Stanford Linear Accelerator Center Hybrid Facility Photon Collaboration))

1983-07-18T23:59:59.000Z

399

SiGeCSi superlattice microcoolers Xiaofeng Fan,a)  

E-Print Network (OSTI)

stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and optoelectronic devices, but their pro- cessing is a bulk technology and is incompatible with inte- grated circuit fabrication process. Solid-state coolers mono- lithically integrated with microelectronic and optoelectronic

400

Radiation effects in Si-Ge quantum size structure (Review)  

SciTech Connect

The article is dedicated to the review and analysis of the effects and processes occurring in Si-Ge quantum size semiconductor structures upon particle irradiation including ion implantation. Comparisons to bulk materials are drawn. The reasons of the enhanced radiation hardness of superlattices and quantum dots are elucidated. Some technological applications of the radiation treatment are reviewed.

Sobolev, N. A., E-mail: sobolev@ua.pt [Universidade de Aveiro, Departamento de Fisica and I3N (Portugal)

2013-02-15T23:59:59.000Z

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Self-assembling of Ge quantum dots in the CaF2/Ge/CaF2/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis  

Science Journals Connector (OSTI)

A CaF2/Ge/CaF2/Si(111) heteroepitaxial structure with Ge quantum dots was grown by molecular-beam ... , is 4050 meV depending on the Ge dot size.

L. V. Sokolov; A. S. Deryabin; A. I. Yakimov

2004-01-01T23:59:59.000Z

402

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

403

Recovery Act Helps GE in-source Manufacturing | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing September 30, 2010 - 2:21pm Addthis The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE Lindsay Gsell GE has a long history in Louisville, Ky. The company's appliance and lighting facility in Louisville has been manufacturing appliances for more than 50 years. Like many facilities, it has seen its share of ups-and-downs. Now, after a tough couple of years, the "Appliance Park" facility is making a "manufacturing" comeback -- with the help of the Recovery Act. The plant retooling project, partially funded through a 48C Advanced Energy

404

TEE-0074 - In the Matter of GE Appliances & Lighting | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

74 - In the Matter of GE Appliances & Lighting 74 - In the Matter of GE Appliances & Lighting TEE-0074 - In the Matter of GE Appliances & Lighting This Decision and Order considers an Application for Exception filed by GE Appliances & Lighting (GE) seeking exception relief from the provision of 10 C.F.R. Part 430, Energy Conservation Program for Consumer Products: Energy Conservation Standards for Refrigerators, Refrigerator-Freezers and Freezers (Refrigerator Efficiency Standards). In its exception request, GE asserts that the firm would suffer a gross inequity if required to adhere to the Refrigerator Efficiency Standards codified at 10 C.F.R. § 430.32. If GE's Application for Exception were granted, GE would receive exception relief from the energy efficiency standard applicable to a new

405

10 Years ON: From the Lab to the Real World in 10 Years | GE...  

NLE Websites -- All DOE Office Websites (Extended Search)

Biofuels Research at GE's Brazil Technology Center 2-3-10-v Crowdsourcing Software Platform Wins Award 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

406

Characterization of the properties for phase-change material GeSb  

Science Journals Connector (OSTI)

Te-free environmentally friendly GeSb phase-change material has been investigated. Eutectic Ge15Sb85...composition, which has a proper high crystallization temperature of 230C, is a good candidate for the applic...

Yifeng Gu; Ting Zhang; Zhitang Song; Yanbo Liu; Bo Liu; Songlin Feng

2010-04-01T23:59:59.000Z

407

Large inherent optical gain from the direct gap transition of Ge thin films  

E-Print Network (OSTI)

The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...

Wang, Xiaoxin

408

E-Print Network 3.0 - amorphous ge-sb-te films Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

times in GeSbTe films irradiated... commercial phase-change optical recording systems, such as those based on GeSbTe Ref. 3 or AglnSbTe,4 use... the crystalline and...

409

AVTA: GE Energy WattStation AC Level 2 Charging System Testing...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Energy WattStation AC Level 2 Charging System Testing Results AVTA: GE Energy WattStation AC Level 2 Charging System Testing Results The Vehicle Technologies Office's Advanced...

410

Phase and Shape Evolutions of Ion Beam Synthesized Ge Based Nanostructures  

E-Print Network (OSTI)

ion beam synthesized Ge nanocrystals," in Department of materials science and engineering:nanoscale engineering. In Chapter 5, ion beam and electronIon Beam Synthesized Ge Based Nanostructures by Swanee Shin Doctor of Philosophy in Engineering

Shin, Swanee

2009-01-01T23:59:59.000Z

411

GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers  

Energy.gov (U.S. Department of Energy (DOE))

GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer machines. GE also urges the DOE...

412

EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois  

Energy.gov (U.S. Department of Energy (DOE))

This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source atDOE's Argonne...

413

Molecular beam deposition of Al{sub 2}O{sub 3} on p-Ge(001)/Ge{sub 0.95}Sn{sub 0.05} heterostructure and impact of a Ge-cap interfacial layer  

SciTech Connect

We investigated the molecular beam deposition of Al{sub 2}O{sub 3} on Ge{sub 0.95}Sn{sub 0.05} surface with and without an ultra thin Ge cap layer in between. We first studied the atomic configuration of both Ge{sub 1-x}Sn{sub x} and Ge/Ge{sub 1-x}Sn{sub x} surfaces after deoxidation by reflection high-energy electron diffraction and resulted, respectively, in a c(4x2) and (2x1) surface reconstructions. After in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric we evidenced using time-of-flight secondary ion mass spectroscopy analyses that Sn diffusion was at the origin of high leakage current densities in the Ge{sub 1-x}Sn{sub x}/Al{sub 2}O{sub 3} gate stack. This damage could be avoided by inserting a thin 5-nm-thick Ge cap between the oxide and the Ge{sub 1-x}Sn{sub x} layer. Finally, metal-oxide-semiconductor capacitors on the Ge capped sample showed well-behaved capacitance-voltage (C-V) characteristics with interface trap density (D{sub it}) in the range of 10{sup 12} eV{sup -1} cm{sup -2} in mid gap and higher close to the valence band edge.

Merckling, C.; Franquet, A.; Vincent, B.; Vandervorst, W.; Loo, R.; Caymax, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001 Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001 Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Zaima, S. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2011-05-09T23:59:59.000Z

414

Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress  

Science Journals Connector (OSTI)

Antimony is the most widely used n-type dopant for Si molecular-beam epitaxy (MBE). However, because of surface segregation during growth, the control of doping profiles remains difficult. The case of Si/Si1-xGex heterostructures is complicated by the existence of stresses, which may affect both the thermodynamics and kinetics of segregation. In this study, we analyze the segregation of Sb resulting from the MBE growth of Si1-xGex/Si(100) heterostructures using secondary ion mass spectrometry as a function of (i) growth temperature (200 C<~T<~550 C), (ii) germanium content (0<~x<~0.2), and (iii) stresses (compressively strained and relaxed layers). We show that Sb segregation: (i) increases with temperature, (ii) increases with Ge content in biaxially compressed layers, (iii) decreases with Ge content in relaxed layers. The temperature variation indicates that Sb surface segregation during growth is kinetically controlled. The contrasting behaviors observed as a function of Ge content in stressed and relaxed layers can thus be explained by a decrease of the segregation enthalpy induced by Ge addition and an increase of near-surface diffusion in stressed layers.

A. Portavoce; I. Berbezier; P. Gas; A. Ronda

2004-04-15T23:59:59.000Z

415

169Tm Mssbauer investigation of the compounds TmFe2Ge2 and TmCu2Ge2  

Science Journals Connector (OSTI)

Temperature-dependent169Tm Mssbauer measurements are reported for the ternary intermetallic compounds TmT2Ge2 (T=Fe, Cu). Based on comparison with results for their TmT2Si2 counterparts, it is verified that the ...

G. A. Stewart; P. W. Thompson; J. M. Cadogan; Hong-Shuo Li

1994-01-01T23:59:59.000Z

416

Atomic structure of amorphous and crystallized Ge{sub 15}Sb{sub 85}  

SciTech Connect

Ge{sub 15}Sb{sub 85} is a promising material for phase-change memory applications owing to its very short crystallization times. As deposited amorphous samples of sputter deposited Ge{sub 15}Sb{sub 85} have been investigated by extended x-ray absorption fine structure (EXAFS) measurements on both, Sb and Ge K absorption edges. After crystallizing the specimen, x-ray diffraction (XRD) and EXAFS measurements have been performed to analyze the atomic structure at different annealing conditions. Thus, experimental techniques focusing on the long range order as well as on the local order have been combined. Sb atoms have on average 3.2(2) nearest neighbors, while Ge atoms have 4.0(3). The Ge-Ge and Ge-Sb bond lengths are determined to 2.46(2) and 2.66(1) A, respectively and agree well with those observed in the amorphous phase of the common phase-change material Ge{sub 2}Sb{sub 2}Te{sub 5}. After crystallizing the sample at 250 deg. C, very different EXAFS spectra with modified Ge-Sb bond lengths are observed. The higher concentration of Ge neighbors at the Ge edge as compared to the as-deposited sample is indicative for phase separation. For the corresponding sample, XRD does not show reflections of Ge, which indicates that the agglomeration of Ge is amorphous or below the coherence length of the x-radiation. The EXAFS spectrum shows a superposition of two phases: one with bond lengths which agree with sp{sup 3}-hybridized Ge [2.43(1) A] and another one with longer Ge-Ge bond lengths [2.79(8) A]. This result can be explained by phase separation in the material.

Zalden, Peter; Eijk, Julia van; Wuttig, Matthias [I. Physikalisches Institut (IA), RWTH Aachen, 52056 Aachen (Germany); Bichara, Christophe [CiNaM-Centre Interdisciplinaire de Nanoscience de Marseille, Campus de Luminy, 13288 Marseille (France); Braun, Carolin; Bensch, Wolfgang [Institut fuer Anorganische Chemie, Universitaet Kiel, Max-Eyth Str. 2, 24118 Kiel (Germany)

2010-05-15T23:59:59.000Z

417

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te  

E-Print Network (OSTI)

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te alloys: Density functional functional simulations, Ge/Sb/Te alloys. Corresponding author: e-mail r.jones@fz-juelich.de, Phone: +49 discussed the alloy As30Ge10Si12Te48, and Te-based alloys have been well represented ever since. Alloys

418

Superlattice-like Ge8Sb92/Ge thin films for high speed and low power consumption phase change memory application  

Science Journals Connector (OSTI)

The amorphous-to-crystalline transitions of superlattice-like Ge8Sb92/Ge thin films were investigated through in situ film resistance measurement. X-ray reflectivity was used to measure the density change before and after phase change. The superlattice-like structure of the thin films was confirmed by using transmission electron microscopy. A picosecond laser pumpprobe system was used to study the phase change speed. Phase change memory cells based on the SLL [Ge8Sb92(4nm)/Ge(3nm)]7 thin films were fabricated to test and verify the switching speed and operation consumption.

Yifeng Hu; Xiaoyi Feng; Jiwei Zhai; Ting Wen; Tianshu Lai; Sannian Song; Zhitang Song

2014-01-01T23:59:59.000Z

419

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Proposed Penalty (2013-SE-4901) Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Watermark: Proposed Penalty (2011-SW-2908) Act One: NPCP (2013-CE-49001)

420

Capricorn Ridge (GE Energy) Wind Farm | Open Energy Information  

Open Energy Info (EERE)

Energy) Wind Farm Energy) Wind Farm Jump to: navigation, search Name Capricorn Ridge (GE Energy) Wind Farm Facility Capricorn Ridge (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Resources Developer NextEra Energy Resources Location TX Coordinates 31.838061°, -100.923965° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.838061,"lon":-100.923965,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Dynamics of growth roughening and smoothening on Ge (001)  

SciTech Connect

We present reflection high-energy electron diffraction measurements of the evolution of surface morphology during molecular-beam epitaxy of Ge on Ge(001) and subsequent annealing. We find that there is a critical ''kinetic roughening'' temperature (375 /sup 0/C) above which a smooth surface remains smooth during growth, but below which it roughens during growth. Surprisingly, smooth starting surfaces never appear to roughen without bound, but reach steady-state roughnesses which depend on temperature and deposition rate. The results can be fit empirically with simple phenomenological equations based on a competition between growth roughening and growth smoothening of a ''pseudo-statistical'' surface. Furthermore, growth-roughened surfaces tend to smoothen, after growth, at a rate consistent with a third-order power-law ripening mechanism.

Chason, E.; Tsao, J.Y.; Horn, K.M.; Picraux, S.T.

1989-03-01T23:59:59.000Z

422

Dynamics of growth roughening and smoothening on Ge (001)  

SciTech Connect

We present reflection high-energy electron diffraction measurements of the evolution of surface morphology during molecular beam epitaxy of Ge on Ge (001) and subsequent annealing. We find that there is a critical ''growth roughening'' temperature (375 C) above which a smooth surface remains smooth during growth, but below which it roughens during growth. Surprisingly, smooth starting surfaces never appear to roughen without bound, but reach steady-state roughnesses which depend on temperature and deposition rate. The results can be fit empirically with simple phenomenological equations based on a competition between growth roughening and growth smoothening of a ''pseudo-statistical'' surface. Furthermore, growth-roughened surfaces tend to smoothen, after growth, at a rate consistent with an Ostwald-like ripening mechanism. 4 figs.

Chason, E.; Tsao, J.Y.; Horn, K.M.; Picraux, S.T.

1988-01-01T23:59:59.000Z

423

Proton-proton Scattering Above 3 GeV/c  

SciTech Connect

A large set of data on proton-proton differential cross sections, analyzing powers and the double-polarization parameter A{sub NN} is analyzed employing the Regge formalism. We find that the data available at proton beam momenta from 3 GeV/c to 50 GeV/c exhibit features that are very well in line with the general characteristics of Regge phenomenology and can be described with a model that includes the {rho}, {omega}, f{sub 2}, and a{sub 2} trajectories and single-Pomeron exchange. Additional data, specifically for spin-dependent observables at forward angles, would be very helpful for testing and refining our Regge model.

A. Sibirtsev, J. Haidenbauer, H.-W. Hammer S. Krewald ,Ulf-G. Meissner

2010-01-01T23:59:59.000Z

424

Meson Spectroscopy at JLab@12 GeV  

SciTech Connect

Meson, being the simplest hadronic bound system, is the ideal "laboratory" to study the interaction between quarks, to understand the role of the gluons inside hadrons and to investigate the origin of color confinement. To perform such studies it is important to measure the meson spectrum, with precise determination of resonance masses and properties, looking for rare qbar q states and for unconventional mesons with exotic quantum numbers (i.e. mesons with quantum numbers that are not compatible with a qbar q structure). With the imminent advent of the 12 GeV upgrade of Jefferson Lab a new generation of meson spectroscopy experiments will start: "Meson-Ex" in Hall B and "GLUEX" in Hall D. Both will use photo-production to explore the spectrum of mesons in the light-quark sector, in the energy range of few GeVs.

Celentano, Andrea [INFN-GENOVA

2013-03-01T23:59:59.000Z

425

Inclusive photoproduction of strange baryons at 20 GeV  

Science Journals Connector (OSTI)

Cross sections are presented for the inclusive photoproduction of KS0, ?, ?, ?-, ? -, ?0, and ?*(1385) at 20 GeV. An upper limit to ?- production is also given. The data come from 284 000 hadronic events photoproduced in the SLAC 1-m hydrogen-bubble-chamber hybrid facility exposed to a nearly monochromatic, polarized 20-GeV backscattered photon beam. A comparison of the KS0, ?, ?, and ?- rates per inelastic event to ?p data show that ?p rates are consistent with being higher than the ?p rates, providing evidence of an ss component of the photon. The pair cross sections for KS0KS0, KS0?, KSo?, and ?? are presented. The xF distributions of the ?, ?, and ?- are compared to a quark-diquark fusion model, giving information on strange-baryon photoproduction mechanisms.

K. Abe et al.

1985-12-01T23:59:59.000Z

426

Ge/Si core/multi shell heterostructure FETs  

SciTech Connect

Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

427

Structure of odd Ge isotopes with 40 < N < 50  

SciTech Connect

We have interpreted recentlymeasured experimental data of {sup 77}Ge, and also for {sup 73,75,79,81}Ge isotopes in terms of state-of-the-art shell-model calculations. Excitation energies, B(2) values, quadrupole moments and magnetic moments are compared with experimental data when available. The calculations have been performed with the recently derived interactions, namely with JUN45 and jj44b for f{sub 5/2pg9/2} space. We have also performed calculation for fpg{sub 9/2} valence space using an fpg effective interaction with {sup 48}Ca core and imposing a truncation to study the importance of the proton excitations across the Z = 28 shell in this region. The predicted results of jj44b interaction are in good agreement with experimental data.

Srivastava, P. C., E-mail: praveen.srivastava@nucleares.unam.mx; Ermamatov, M. J. [Universidad Nacional Autonoma de Mexico, Instituto de Ciencias Nucleares (Mexico)

2013-06-15T23:59:59.000Z

428

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents (OSTI)

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

429

Partners for progress in HVDC: GE and EPRI  

SciTech Connect

Since the first solid-state HVDC system was installed at Eel River in 1971, there have been enormous strides in component capability and control algorithm sophistication. Benefits include reduction in cost and power losses, smaller size and improved system stability - all achieved with the same high reliability. These improvements have been achieved through development programs which required a commitment of considerable resources made possible because GE considers HVDC an important area of growth and because EPRI has consistently supported HVDC projects. Some developments from the GE-EPRI partnership for progress in HVDC technology are already being offered and others are in the process of commercialization. These on-going programs assure that future improvements will continue to make HVDC a more attractive alternative for meeting the utility industry's needs.

Damsky, B.L. (HVDC Projects Operation, Collingdale, PA); Ladden, J.M.

1983-01-01T23:59:59.000Z

430

Milford Wind Corridor Phase I (GE Energy) | Open Energy Information  

Open Energy Info (EERE)

form form View source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon » Milford Wind Corridor Phase I (GE Energy) Jump to: navigation, search Name Milford Wind Corridor Phase I (GE Energy) Facility Milford Wind Corridor Phase I (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner First Wind Developer First Wind Energy Purchaser Southern California Public Power Authority Location Milford UT Coordinates 38.52227°, -112.935262° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.52227,"lon":-112.935262,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

431

GeV emission from Gamma-Ray Burst afterglows  

E-Print Network (OSTI)

We calculate the GeV afterglow emission expected from a few mechanisms related to GRBs and their afterglows. Given the brightness of the early X-ray afterglow emission measured by Swift/XRT, GLAST/LAT should detect the self-Compton emission from the forward-shock driven by the GRB ejecta into the circumburst medium. Novel features discovered by Swift in X-ray afterglows (plateaus and chromatic light-curve breaks) indicate the existence of a pair-enriched, relativistic outflow located behind the forward shock. Bulk and inverse-Compton upscattering of the prompt GRB emission by such outflows provide another source of GeV afterglow emission detectable by LAT. The large-angle burst emission and synchrotron forward-shock emission are, most likely, too dim at high photon energy to be observed by LAT. The spectral slope of the high-energy afterglow emission and its decay rate (if it can be measured) allow the identification of the mechanism producing the GeV transient emission following GRBs.

A. Panaitescu

2008-01-10T23:59:59.000Z

432

Axial Ge/Si nanowire heterostructure tunnel FETs.  

SciTech Connect

Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx}20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt doped interfaces used in p-i-n based TFETs, which is hard to achieve both in thin-film and

Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

2010-03-01T23:59:59.000Z

433

Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition  

SciTech Connect

The predeposition of P, with coverages {theta}{sub P} ranging from 0 to 1 ML, on Si(001) significantly increases both the areal density and spatial self-organization of Ge islands grown by gas-source molecular beam epitaxy from hydride precursors. The Ge island density {rho}{sub Ge} initially increases with {theta}{sub P}, reaching a maximum of 1.4 x 10{sup 10} cm{sup -2} at {theta}{sub P} = 0.7 ML, a factor of four times higher than on bare Si(001) under the same deposition conditions, before decreasing at higher P coverages. The increase in {rho}{sub Ge}({theta}{sub P}) is due to a corresponding decrease in Ge adatom mean free paths resulting from passivation of surface dangling bonds by adsorbed pentavalent P atoms which, in addition, leads to surface roughening and, therefore, higher Ge coverages at constant Ge{sub 2}H{sub 6} dose. As {theta}{sub P} (and hence, {rho}{sub Ge}) increases, so does the degree of Ge island ordering along <100> directions due to the anisotropic strain field surrounding individual islands. Similar results are obtained for Ge island growth on P-doped Si(001) layers where strong P surface segregation provides partial monolayer coverage prior to Ge deposition.

Cho, B.; Bareno, J.; Petrov, I.; Greene, J. E. [Materials Science Department and the Frederick-Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Ave., Urbana, Illinois 61801 (United States)

2011-05-01T23:59:59.000Z

434

Aqueous germanate ion solution promoted synthesis of worm-like crystallized Ge  

Science Journals Connector (OSTI)

This work demonstrates that it is possible to synthesize crystallized Ge nanostructures directly in an aqueous medium under ambient conditions by using widely available GeO2 (in the form of germanate ions) as a precursor. The reaction of germanate ions with NaBH4 in an aqueous medium resulted in highly hydrogenated Ge that could be transformed into crystallized Ge after an air-drying treatment. The NaBH4/GeO2 molar ratio, reaction time and drying temperature were optimized for the synthesis of crystallized Ge products. Furthermore, the reaction time has an influence on the size and shape of the final crystallized Ge products. A reaction time of 12h could result in crystallized Ge powder samples that contain ultra-small (520nm) particles and larger (50100nm) particles. By controlling the reaction time to 24h, a Ge powder product consisting of worm-like crystallized Ge nanostructures with diameters of 1080nm and lengths up to 1000nm was obtained. The possible reaction and growth mechanisms involved in this method were investigated. This new synthetic route may be a good candidate for synthesizing a wide variety of crystallized Ge nanomaterials and devices due to its low cost, low safety risk, facileness, high yield (above 70% and in gram scale) and convenience for adding other chemicals (i.e.dopants or morphology modifying agents) into the reaction system.

Chengbin Jing; Xiaodan Zang; Wei Bai; Junhao Chu; Aiyun Liu

2009-01-01T23:59:59.000Z

435

Band-structure calculations for Ba6Ge25 and Ba4Na2Ge25 clathrates  

Science Journals Connector (OSTI)

Electronic band structures for Ba6Ge25 and Ba4Na2Ge25 clathrates are calculated using linear muffin-tin orbital method within the local-density approximation. It is found that barium states strongly contribute to the density of states at the Fermi level and thus can influence the transport properties of the compounds. A sharp peak of the density of states is found just at the Fermi level. It is also shown that the shifting of barium atoms toward experimentally deduced split positions in Ba6Ge25 produces a splitting of this peak which may be interpreted as a band Jahn-Teller effect. If the locking of the barium atoms at the observed structural phase transition is assumed, this reduction of the density of states at the Fermi level can account for the experimentally observed decrease of the magnetic susceptibility and electrical resistivity at the phase transition, and the values of density of states are in agreement with low-temperature specific-heat measurements and variation of superconducting transition temperature with pressure.

Ivica Zerec; Alexander Yaresko; Peter Thalmeier; Yuri Grin

2002-07-29T23:59:59.000Z

436

Determination of70Ge(n,p)70Ga and74Ge(n,p)74Ga reaction cross sections for a fission neutron spectrum  

Science Journals Connector (OSTI)

The fission neutron spectrum averaged cross-sections for the reactions70Ge(n,p)70Ga and74Ge(n,p)74Ga have been determined. The averages of four determinations are, respectively, (3.100.30) mb and (0.009380.0005...

I. M. Cohen; A. J. Kestelman; J. C. Furnari

1996-03-14T23:59:59.000Z

437

Surface passivation of p-type Ge substrate with high-quality GeN{sub x} layer formed by electron-cyclotron-resonance plasma nitridation at low temperature  

SciTech Connect

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeN{sub x}/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeN{sub x}/Ge interface properties. The GeN{sub x}/Ge formed at room temperature and treated by PMA at 400 deg. C exhibits the best interface properties with an interface trap density of 1 x 10{sup 11 }cm{sup -2 }eV{sup -1}. The GeN{sub x}/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.

Fukuda, Yukio; Otani, Yohei [Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino, Nagano 391-0292 (Japan); Okamoto, Hiroshi; Iwasaki, Takuro; Ono, Toshiro [Hirosaki University, 3 Bunkyo-cho, Hirosaki, Aomori 036-8561 (Japan)

2011-09-26T23:59:59.000Z

438

Electrical, optical, and thermal properties of Sn-doped phase change material Ge2Sb2Te5  

Science Journals Connector (OSTI)

In this article, effect of Sn on the electrical, optical, and thermal properties of Ge2Sb2Te5 is studied. Ge2Sb2Te5, Ge1.55Sb2Te5Sn0.45, and Ge1.1Sb2Te5Sn0.9...alloys are prepared by melt quenching technique and ...

Gurinder Singh; Aman Kaura; Monika Mukul; S. K. Tripathi

2013-01-01T23:59:59.000Z

439

Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films  

SciTech Connect

Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, ? = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing ? from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of ? is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (?) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (? = 550 nm) to 2.62 and occurs at ? = 0.25. Finally n drops to 1.60 for ? = 0.501.00, where the films become GeO2. A detailed correlation between ?, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

2014-03-18T23:59:59.000Z

440

Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature  

Science Journals Connector (OSTI)

Structural properties of SiGe/Si single wells are studied by double-crystal X-ray diffraction. Four SiGe/Si single wells have been grown on Si (001) at 750C by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature. Using dynamic theory, together with kinematic theory and the specific growth procedure adopted, structural parameters in the multilayer structure are determined precisely. The results are compared with those obtained from PL and XTEM as well as AES measurements. It is found that disilane adsorption is dependent on cracking temperature as well as Ge incorporation. Disilane adsorption is increased by cracking disilane while it decreased with Ge incorporation

J.P. Liu; M.Y. Kong; D.D. Huang; J.P. Li; D.Z. Sun

1998-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
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to obtain the most current and comprehensive results.


441

Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)  

SciTech Connect

Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

2008-10-31T23:59:59.000Z

442

Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers  

SciTech Connect

One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) , b=12.475(5) , c=17.077(7) , V=1941.5(15) {sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UVvis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. The first example of inorganicorganic hybrid thiogermanates with mixed valent Ge centers.

Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); Lei, Xiao-Wu, E-mail: xwlei_jnu@163.com [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China)

2013-10-15T23:59:59.000Z

443

Formation of nickel germanide on SiO{sub 2}-capped n-Ge to lower its Schottky barrier height  

SciTech Connect

In this Letter, NiGe/SiO{sub 2}/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO{sub 2} films to form NiGe. The equivalent Schottky barrier height reduced from 0.58?eV for NiGe/n-Ge to ohmic contact. The anomalous diffusion behavior and accumulation of Ge in the SiO{sub 2} near the NiGe/SiO{sub 2} interface can be explained by vacancy-enhanced Ge diffusion. It is proposed that the presence of vacancies and Ge atoms embedded in the SiO{sub 2} layer play a significant role in the current enhancement by generation of multiple levels in the SiO{sub 2} band gap.

Lin, Guangyang; Tang, Mengrao; Li, Cheng, E-mail: lich@xmu.edu.cn; Huang, Shihao; Lu, Weifang; Wang, Chen; Yan, Guangming; Chen, Songyan [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)] [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)

2013-12-16T23:59:59.000Z

444

Forward charge asymmetry in 20-GeV gammap reactions  

Science Journals Connector (OSTI)

Fast forward particles photoproduced in 20-GeV interactions on a hydrogen target are shown to be preferentially positive, the asymmetry increasing with transverse momentum and Feynman x. Evidence is given that this effect is not due to forward-going target fragments. A model in which production from the photon of a forward-going spectator u is preferred over a ?, due to a higher probability for interactions of antiquarks with the proton constituents, is shown to be qualitatively consistent with the data.

V. R. ODell et al.

1987-07-01T23:59:59.000Z

445

Diamond turning of Si and Ge single crystals  

SciTech Connect

Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

Blake, P.; Scattergood, R.O.

1988-12-01T23:59:59.000Z

446

6 GeV light source project cost estimating procedure  

SciTech Connect

To maintain uniformity in estimating the cost requirements of the various components of the 6 GeV Light Source, the following procedure will be used by all the task groups. The procedure uses a Work Breakdown Structure (VBS) to break down the project into manageable, easy to estimate, components. The project is first broken down into major tasks or categories. Then each major division is continuously subdivided until the desired level of detail is achieved. This can be shown best by using the example of the WBS of the Aladdin Upgrade Project, excerpts of which are included in Appendix A.

NONE

1985-10-23T23:59:59.000Z

447

An 8-GeV Synchrotron-Based Proton Driver  

SciTech Connect

In January 2002, the Fermilab Director initiated a design study for a high average power, modest energy proton facility. Such a facility is a possible candidate for a construction project in the U.S. starting in the middle of this decade. The key technical element is a new machine, dubbed the ''Proton Driver,'' as a replacement of the present Booster. The study of an 8-GeV synchrotron-based proton driver has been completed and published. This paper will give a summary report, including machine layout and performance, optics, beam dynamics issues, technical systems design, civil construction, cost estimate and schedule.

Weiren Chou

2003-06-04T23:59:59.000Z

448

Surface passivation of the Ge substrate by novel nitrogen plasma immersion treatment  

Science Journals Connector (OSTI)

In this paper, a novel nitrogen plasma immersion treatment (NNPIT) with accelerating power for Ge surface passivation is presented and compared with conventional nitrogen plasma immersion treatment (NPIT). Results show that the GeN bond formed at a surface by NPIT can suppress the growth of Ge suboxide during high-K dielectric deposition. As for NNPIT, more nitrogen plasma drifts to the Ge surface, which is induced by the accelerating electric field, to enhance the dangling bond passivation, and thus the NNPIT method can further suppress Ge suboxide growth during high-K dielectric deposition. As a result, the CV characteristics in terms of a flat-band voltage, hysteresis and interface state density can be significantly improved, which is promising for high performance Ge MOSFETs fabrication.

Meng Lin; Ming Li; Xia An; Quanxin Yun; Min Li; Zhiqiang Li; Pengqiang Liu; Xing Zhang; Ru Huang

2013-01-01T23:59:59.000Z

449

Germanium diffusion during HfO{sub 2} growth on Ge by molecular beam epitaxy  

SciTech Connect

The authors study the Ge diffusion during HfO{sub 2} growth by molecular beam epitaxy on differently in situ prepared germanium substrates and at different growth temperatures. While HfO{sub 2} layers grown directly on Ge do not show any germanium contamination, oxygen rich interfacial layers such as GeO{sub x} or GeO{sub x}N{sub y} partly dissolve into the HfO{sub 2} layer, giving rise to high Ge contamination (from 1% to 10%). The use of nitridated interfacial layers does not prevent Ge diffusion into the HfO{sub 2} during the growth process because of the high oxygen content present in the nitridated germanium layer.

Ferrari, S.; Spiga, S.; Wiemer, C.; Fanciulli, M.; Dimoulas, A. [Laboratorio MDM-INFM-CNR, Via Olivetti, 2 Agrate Brianza, Milano 20041 (Italy); MBE Laboratory, Institute of Materials Science, DEMOKRITOS National Center for Scientific Research, 153 10 Athens (Greece)

2006-09-18T23:59:59.000Z

450

Ge doped HfO{sub 2} thin films investigated by x-ray absorption spectroscopy  

SciTech Connect

The stability of the tetragonal phase of Ge doped HfO{sub 2} thin films on Si(100) was investigated. Hf(Ge)O{sub 2} films with Ge atomic concentrations varying from 0% to 15% were deposited by remote plasma chemical vapor deposition. The atomic structure on the oxide after rapid thermal annealing was investigated by x-ray absorption spectroscopy of the O and Ge K edges and by Rutherford backscattering spectrometry. The authors found that Ge concentrations as low as 5 at. % effectively stabilize the tetragonal phase of 5 nm thick Hf(Ge)O{sub 2} on Si and that higher concentrations are not stable to rapid thermal annealing at temperatures above 750 deg. C.

Miotti, Leonardo; Bastos, Karen P.; Lucovsky, Gerald; Radtke, Claudio; Nordlund, Dennis [Department of Physics, North Carolina State University, Box 8202, Raleigh, North Carolina 27695-8202 (United States); Instituto de Quimica, Universidade Federal do Rio Grande do Sul, 91509-900 Porto Alegre (Brazil); Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States)

2010-07-15T23:59:59.000Z

451

Observation of optical spin injection into Ge-based structures at room temperature  

SciTech Connect

Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge{sub 0.8}Si{sub 0.2} quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge.

Yasutake, Yuhsuke; Hayashi, Shuhei; Fukatsu, Susumu [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan)] [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan); Yaguchi, Hiroyuki [Graduate School of Science and Engineering, Saitama University, Shimo-Okubo 255, Sakura, Saitama 338-8570 (Japan)] [Graduate School of Science and Engineering, Saitama University, Shimo-Okubo 255, Sakura, Saitama 338-8570 (Japan)

2013-06-17T23:59:59.000Z

452

Adsorbed layer structure of cationic surfactants on quartz  

SciTech Connect

Recent atomic force microscopy (AFM) surface images of surfactant adsorbed at solid and solution interfaces have shown apparent micellar aggregates familiar from bulk self-assembly. This contradicts the classical picture of laterally unstructured bilayers within which neutron reflectometry (NR) measurements have previously been analyzed. Applying both techniques to surfactant adsorption on quartz, we show that film thickness and coverage parameters derived from NR results are generally consistent with those from AFM and bulk self-assembly. NR by itself allows us to distinguish between actual bilayer and probable aggregate adsorption, which will be of particular importance when a solution's rheology makes AFM imaging impractical.

Schulz, Jamie C.; Warr, Gregory G.; Butler, Paul D.; Hamilton, W. A.

2001-04-01T23:59:59.000Z

453

Structural and magnetic properties of Ge{sub 1-x}Mn{sub x} thin films grown on Ge (001) substrates  

SciTech Connect

We investigate the structural and magneto-optical properties of Mn-doped Ge (Ge{sub 1-x}Mn{sub x}) films with self-organized nanocolumns, grown on Ge (001) substrates by molecular beam epitaxy (MBE), in which the substrate temperature (T{sub S}) and growth rate (R{sub G}) are varied. Transmission electron microscopy (TEM) observations and magnetic circular dichroism (MCD) measurements reveal that Mn-rich nanocolumnar precipitation is formed in the Ge{sub 1-x}Mn{sub x} films grown at T{sub S} {<=} 100 deg. C, with keeping the size and spacing. At higher T{sub S} ({>=}150 deg. C), ferromagnetic Mn{sub 5}Ge{sub 3} clusters are formed. It is also found that the Mn distribution in the Ge{sub 1-x}Mn{sub x} films can be controlled: By lowering T{sub S} or increasing R{sub G}, the Mn content x{sub nc} in the nanocolumns decreases and Mn atoms are more distributed into the Ge matrix, and eventually the magnetic properties are changed. The formation of the nanocolumns is explained by the spinodal decomposition in the layer-by-layer growth mode. We analyzed the periodicity and Mn content x{sub nc} of nanocolumns by using the Cahn-Hilliard equation.

Yada, Shinsuke; Nam Hai, Pham; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Sugahara, Satoshi [Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-14 Nagatsuta, Yokohama, Kanagawa 226-8502 (Japan)

2011-10-01T23:59:59.000Z

454

Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells  

SciTech Connect

Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band kp method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30??10{sup 18}?cm{sup ?3}.

Fan, W. J., E-mail: ewjfan@ntu.edu.sg [NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2013-11-14T23:59:59.000Z

455

Vermont Yankee's benefits and concerns operating with Axially zoned GE9 fuel  

SciTech Connect

Vermont Yankee (VY) is a 368-assembly, D-lattice, boiling water reactor (BWR)/4. The current cycle 16 contains 252 GE9 assemblies with axial zoning of gadolinium and enrichment, 112 GE8 assemblies with axially zoned gadolinium, and 4 Siemens 9 x 9-IX lead qualification assemblies. In this paper, the performance of the GE9-dominated core is evaluated against previous cores containing less sophisticated fuel designs.

Woehlke, R.A. (Yankee Atomic Electric Co., Bolton, MA (United States))

1993-01-01T23:59:59.000Z

456

Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I  

E-Print Network (OSTI)

Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I M. Agostini,14 M. Allardt,3 E and a lower limit is derived for the half-life of neutrinoless double beta decay of 76 Ge, T0 1/2> 2.1 · 1025 double beta decay of the isotope 76 Ge. Data con- sidered in the present analysis have been collected

457

12 GeV Upgrade Project - Cryomodule Production  

SciTech Connect

The Thomas Jefferson National Accelerator Facility (Jefferson Lab) is producing ten 100+MV SRF cryomodules (C100) as part of the CEBAF 12 GeV Upgrade Project. Once installed, these cryomodules will become part of an integrated accelerator system upgrade that will result in doubling the energy of the CEBAF machine from 6 to 12 GeV. This paper will present a complete overview of the C100 cryomodule production process. The C100 cryomodule was designed to have the major components procured from private industry and assembled together at Jefferson Lab. In addition to measuring the integrated component performance, the performance of the individual components is verified prior to being released for production and assembly into a cryomodule. Following a comprehensive cold acceptance test of all subsystems, the completed C100 cryomodules are installed and commissioned in the CEBAF machine in preparation of accelerator operations. This overview of the cryomodule production process will include all principal performance measurements, acceptance criterion and up to date status of current activities.

J. Hogan, A. Burrill, G.K. Davis, M.A. Drury, M. Wiseman

2012-07-01T23:59:59.000Z

458

Phase-change optical recording materials based on GeSb  

Science Journals Connector (OSTI)

GeSb based materials are investigated for phase-change optical recording. Physical properties and amorphization / crystallization behavior are determined. Recording characteristics are...

Dimitrov, Dimitre

459

18.5 Million in New Research Program Funding Announced, GE...  

NLE Websites -- All DOE Office Websites (Extended Search)

funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

460

Using 3D Painting to Build and Repair Parts | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

a part or add material to repair an existing part. Cold spray is part of GE's expanded additive manufacturing toolkit. nteneh Kebbede, Manager of the Coating and Surface...

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy  

E-Print Network (OSTI)

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byrate enhancement is due to a photo-chemical process. Thenanocrystals can be rapidly photo-oxidized. This oxidation

2008-01-01T23:59:59.000Z

462

Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces  

SciTech Connect

We report on the phase separation in Au-Ge system leading to the formation of lobe-lobe (bi-lobed) Au-Ge nanostructures under ultra high vacuum (UHV) conditions ({approx_equal}3 x 10{sup -10} mbar) on clean Si(100) surfaces. For this study, {approx_equal}2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy. Thermal annealing was carried out inside the UHV chamber at temperature {approx_equal}500 deg. C and following this, nearly square shaped Au{sub x}Si{sub 1-x} nano structures of average length {approx_equal}48 nm were formed. A {approx_equal}2 nm Ge film was further deposited on the above surface while the substrate was kept at a temperature of {approx_equal}500 deg. C. Well ordered Au-Ge nanostructures where Au and Ge residing side by side (lobe-lobe structures) were formed. In our systematic studies, we show that, gold-silicide nanoalloy formation at the substrate (Si) surface is necessary for forming phase separated Au-Ge bilobed nanostructures. These results show that the Au-Ge bonding is unstable in nature. Electron microscopy (TEM, STEM-EDS, SEM) studies were carried out to determine the structure of Au-Ge nano systems. Rutherford backscattering spectrometry measurements show gold inter-diffusion into substrate while it is absent for Ge.

Rath, A.; Dash, J. K.; Juluri, R. R.; Satyam, P. V. [Institute of Physics, Sachivalaya Marg, Bhubaneswar-751005 (India); Schowalter, Marco; Mueller, Knut; Rosenauer, A. [Institute of Solid State Physics, University of Bremen, D-28359 Bremen (Germany)

2012-05-15T23:59:59.000Z

463

Chemical states and electronic structure of a HfO(-2) / Ge(001) interface  

SciTech Connect

We report the chemical bonding structure and valence band alignment at the HfO{sub 2}/Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO{sub 2} film using a dilute HF-solution. We found that a very non-stoichiometric GeO{sub x} layer exists at the HfO{sub 2}/Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO{sub x} was determined to be {Delta}E{sub v} (Ge-GeO{sub x}) = 2.2 {+-} 0.15 eV, and that between Ge and HfO{sub 2}, {Delta}E{sub v} (Ge-HfO{sub 2}) = 2.7 {+-} 0.15 eV.

Seo, Kang-ill; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; /SLAC, SSRL; Saraswat, Krishna C.; /Stanford U., Elect.

2005-05-04T23:59:59.000Z

464

GE to DOE General Counsel; Re:Request for Comment on Large Capacity...  

Office of Environmental Management (EM)

Clothes Washers GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer...

465

E-Print Network 3.0 - amorphous ge bipolar Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

at Stony Brook, Department of Electrical Engineering and Computer Engineering, Optoelectronics Research Group Collection: Engineering 10 A New SiGe Base Lateral PNM Schottky...

466

Positron-annihilation measurements of vacancy formation in Ni and Ni(Ge)  

SciTech Connect

Vacancy formation in Ni and in dilute Ni(Ge) alloys was studied under thermal equilibrium conditions using positron-annihilation Doppler broadening. A monovacancy formation enthalpy of 1.8 +- 0.1 eV was determined for pure Ni; combining this result with that from previous tracer self-diffusion measurements, a monovacancy migration enthalpy of 1.1 +- 0.1 eV was also deduced. Analysis of the vacancy formation measurements in Ni(0.3 at.% Ge) and Ni(1 at.% Ge) yielded a value for the vacancy-Ge binding enthalpy of 0.20 +- 0.04 eV.

Smedskjaer, L.C.; Fluss, M.J.; Legnini, D.G.; Chason, M.K.; Siegel, R.W.

1982-03-01T23:59:59.000Z

467

Sr{sub 7}Ge{sub 6}, Ba{sub 7}Ge{sub 6} and Ba{sub 3}Sn{sub 2} -Three new binary compounds containing dumbbells and four-membered chains of tetrel atoms with considerable Ge-Ge {pi}-bonding character  

SciTech Connect

The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} were prepared by arc melting and annealing in welded tantalum ampoules using induction as well as resistance furnaces. The compounds were investigated by powder and single crystal X-ray diffraction. Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} crystallize in the Ca{sub 7}Sn{sub 6} structure type (space group Pmna, Z=4: a=7.777(2) A, b=23.595(4) A, c=8.563(2) A, wR{sub 2}=0.081 (all data), 2175 independent reflections, 64 variable parameters for Sr{sub 7}Ge{sub 6} and a=8.0853(6) A, b=24.545(2) A, c=8.9782(8) A, wR{sub 2}=0.085 (all data), 2307 independent reflections, 64 variable parameters for Ba{sub 7}Ge{sub 6}). Ba{sub 3}Sn{sub 2} crystallizes in an own structure type with the space group P4{sub 3}2{sub 1}2, Z=4, a=6.6854(2) A, c=17.842(2) A, wR{sub 2}=0.037 (all data), 1163 independent reflections, 25 variable parameters. In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains. Their crystal structures cannot be rationalized according to the (8-N) rule. In contrast, Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. The chemical bonding situation in these structures is discussed on the basis of partial and total Density Of States (DOS) curves, band structures including fatbands, topological analysis of the Electron Localization Function (ELF) as well as Bader analysis of the bond critical points using the programs TB-LMTO-ASA and WIEN2K. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, all germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. The {pi}-bonding character of the germanides is best reflected by the resonance hybrid structures {l_brace}[Ge-Ge]{sup 6-}/[Ge-{sup ....}Ge-{sup ....}Ge-{sup ....}Ge]{sup 8-}{r_brace}{r_reversible}{l_brace}[Ge=Ge]{sup 4-}/[Ge-Ge-Ge-Ge]{sup 10-}{r_brace}. - Graphical abstract: The structure of Ba{sub 3}Sn{sub 2} contains Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains are the predominant features in Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6}. Their crystal structures cannot be rationalized according to the (8-N) rule. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, the germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. Highlights: Black-Right-Pointing-Pointer The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} have been synthesized. Black-Right-Pointing-Pointer In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as dumbbells and four-membered atom chains. Black-Right-Pointing-Pointer Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif. Black-Right-Pointing-Pointer The chemical bonding situation within these structures is discussed.

Siggelkow, Lisa; Hlukhyy, Viktor [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany); Faessler, Thomas F., E-mail: thomas.faessler@lrz.tum.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany)

2012-07-15T23:59:59.000Z

468

Effect of the growth rate on the morphology and structural properties of hut-shaped Ge  

Science Journals Connector (OSTI)

The effect of Ge deposition rate on the morphology and structural properties of self-assembled Ge/Si(001) islands was studied. Ge/Si(001) layers were grown by solid-source molecular-beam epitaxy at 500?C. We adjusted the Ge coverage, 6monolayers (ML), and varied the Ge growth rate by a factor of 100, R = 0.022MLs?1, to produce films consisting of hut-shaped Ge islands. The samples were characterized by scanning tunnelling microscopy, Raman spectroscopy, and Rutherford backscattering measurements. The mean lateral size of Ge nanoclusters decreases from 14.1nm at R = 0.02MLs?1 to 9.8nm at R = 2MLs?1. The normalized width of the size distribution shows non-monotonic behaviour as a function of R and has a minimum value of 19% at R = 2MLs?1. Ge nanoclusters fabricated at the highest deposition rate demonstrate the best structural quality and the highest Ge content (~0.9).

A I Yakimov; A I Nikiforov; A V Dvurechenskii; V V Ulyanov; V A Volodin; R Groetzschel

2006-01-01T23:59:59.000Z

469

Magnetic X-Ray Scattering Study of GdCo2Ge2 and NdCo2Ge2  

SciTech Connect

The results of magnetic x-ray resonant exchange scattering (XRES) experiments are important to the development of an understanding of magnetic interactions in materials. The advantages of high Q resolution, polarization analysis, and the ability to study many different types of materials make it a vital tool in the field of condensed matter physics. Though the concept of XRES was put forth by Platzman and Tzoar in 1970, the technique did not gain much attention until the work of Gibbs and McWhan et al. in 1988. Since then, the technique of XRES has grown immensely in use and applicability. Researchers continue to improve upon the procedure and detection capabilities in order to study magnetic materials of all kinds. The XRES technique is particularly well suited to studying the rare earth metals because of the energy range involved. The resonant L edges of these elements fall between 5-10 KeV. Resonant and nonresonant x-ray scattering experiments were performed in order to develop an understanding of the magnetic ordering in GdCo{sub 2}Ge{sub 2} and NdCo{sub 2}Ge{sub 2}.

William Good

2002-08-27T23:59:59.000Z

470

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

SciTech Connect

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

471

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

472

Second harmonic generation from Ge doped SiO{sub 2} (Ge{sub x}(SiO{sub 2}){sub 1?x}) thin films grown by sputtering  

SciTech Connect

Second-order nonlinear optical properties of sputter-deposited Ge-doped SiO{sub 2} thin films were investigated. It was shown that the second-order nonlinearity of SiO{sub 2}, which vanishes in the electric-dipole approximation due to the centrosymmetric structure, can be significantly enhanced by Ge doping. The observed maximum value of d{sub 33} was 8.2 pm/V, which is 4 times larger than d{sub 22} of ?-BaB{sub 2}O{sub 4} crystal. Strong correlation was observed between the d{sub eff} values and the electron spin resonance signals arising from GeP{sub b} centers, suggesting that GeP{sub b} centers are the most probable origin of the large second-order nonlinearity.

Kawamura, Ibuki; Imakita, Kenji; Fujii, Minoru; Hayashi, Shinji [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)] [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)

2013-11-11T23:59:59.000Z

473

Correlation of defect centers with second-harmonic generation in Ge-doped and GeP-doped silica-core single-mode fibers  

Science Journals Connector (OSTI)

The origin of frequency doubling in Ge-doped silica-core single-mode glass fibers has been investigated with electron-spin-resonance spectrometry. Correlations have been observed...

Tsai, T E; Saifi, M A; Friebele, E J; sterberg, U; Griscom, D L

1989-01-01T23:59:59.000Z

474

Microsoft Word - Poster Abstract_2010_GE Global Reserach.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

current collector geometry on ohmic resistance current collector geometry on ohmic resistance H. Cao, S. Gaunt, T. Striker and M.J. Alinger* GE Global Research, One Research Circle, Niskayuna, NY 12309 In order to directly measure the cathode current collector ohmic resistance contribution to the total cell resistance, contact resistance measurements are typically made. In addition to starting cell resistance contributions, these tests provide data regarding resistance changes over time for interpretation of performance degradation. However, the geometries of the current collection used during this testing are often not directly representative of operational fuel cells. Thus, an experimental study was initiated to investigate the effect of various interconnect geometries and their influence on Area

475

Direct Detection of Sub-GeV Dark Matter  

SciTech Connect

Direct detection strategies are proposed for dark matter particles with MeV to GeV mass. In this largely unexplored mass range, dark matter scattering with electrons can cause single-electron ionization signals, which are detectable with current technology. Ultraviolet photons, individual ions, and heat are interesting alternative signals. Focusing on ionization, we calculate the expected dark matter scattering rates and estimate the sensitivity of possible experiments. Backgrounds that may be relevant are discussed. Theoretically interesting models can be probed with existing technologies, and may even be within reach using ongoing direct detection experiments. Significant improvements in sensitivity should be possible with dedicated experiments, opening up a window to new regions in dark matter parameter space.

Essig, Rouven; Mardon, Jeremy; Volansky, Tomer

2012-03-20T23:59:59.000Z

476

Axial Ge/Si nanowire heterostructure tunnel FETs  

SciTech Connect

The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

477

Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb  

E-Print Network (OSTI)

Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb contender for extremely low noise, cryogenically cooled amplifiers. This paper begins with a procedureGe), cryogenic, low noise amplifier (LNA), noise parameters, transistor modeling. I. INTRODUCTION Very low

Weinreb, Sander

478

Optical gain from the direct gap transition of Ge-on-Si at room temperature  

E-Print Network (OSTI)

We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.

Liu, Jifeng

479

Infrared absorption of n-type tensile-strained Ge-on-Si  

E-Print Network (OSTI)

We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct ? valley in n[superscript +] Ge-on-Si is reported ...

Wang, Xiaoxin

480

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes  

E-Print Network (OSTI)

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-absorption-charge- multiplication Ge/Si avalanche photodiode with an enhanced gain- bandwidth-product of 845GHz at a wavelength photodiodes (APDs) References and links 1. R. B. Emmons, "Avalanche photodiode frequency response," J. Appl

Bowers, John

Note: This page contains sample records for the topic "nr nr ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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481

University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE COOLERS  

E-Print Network (OSTI)

for SiGe/Si superlattice coolers. SiGe is a good thermoelectric material for high temperature and thermally in parallel, similar to conventional thermoelectric devices, and thus achieve large cooling of the barriers to further increase clock speeds and decrease feature sizes. Thermoelectric (TE) refrigeration

482

Experimental limits on massive neutrinos from e(+)e(-) annihilations at 29 GeV  

E-Print Network (OSTI)

A search was made in 29-GeV e(+)e(-) annihilations for massive neutrinos decaying to e()X(?)(?) where X is a muon or meson. A 300-pb(-1) data sample yielded just one candidate event with a mass m(e)X>1.8 GeV. Significant limits are found for new...

Baringer, Philip S.; Akerlof, C.; Chapman, J.; Errede, D.; Ken, M. T.; Meyer, D. I.; Neal, H.; Nitz,D.; Thun, R.; Tschirhart, R.; Derrick, M.

1988-02-01T23:59:59.000Z

483

Electrical and thermal properties of neutron-transmutation-doped Ge at 20 mK  

Science Journals Connector (OSTI)

We report on hot-electron effects in neutron-transmutation-doped Ge (NTD Ge) near 20 mK. Both static and dynamic electrical properties were measured and compared with a model including both variable-range-hopping conduction and hot-electron effects.

Ning Wang; F. C. Wellstood; B. Sadoulet; E. E. Haller; J. Beeman

1990-02-15T23:59:59.000Z

484

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication Applications  

E-Print Network (OSTI)

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication ApplicationsGe/Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. In There is immense interest in the realization of Si-based optoelectronic devices, optoelectronic integrated circuits

Rieh, Jae-Sung

485

Advanced Design of Broadband Distributed Amplifier using a SiGe BiCMOS Technology  

E-Print Network (OSTI)

Advanced Design of Broadband Distributed Amplifier using a SiGe BiCMOS Technology Gye-An Lee distributed amplifier for optical communication applications using SiGe BiCMOS technology. The design of some techniques are needed at such high frequencies. Main obstacles in the design of a silicon- based distributed

De Flaviis, Franco

486

The BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator  

E-Print Network (OSTI)

used at the world's first x-ray free electron laser (FEL) at the LCLS at SLAC, and the lower energyThe BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator W.P. Leemansa,b,c , R, USA Abstract. An overview is presented of the design of a 10 GeV laser plasma accelerator (LPA

Geddes, Cameron Guy Robinson

487

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche  

E-Print Network (OSTI)

-speed InP /InGaAsP /InGaAs avalanche photodiodes grown by chemical beam epitaxy," IEEE J. Quantum ElectronResonant normal-incidence separate-absorption- charge-multiplication Ge/Si avalanche photodiodes the impedance of separate-absorption-charge- multiplication Ge/Si avalanche photodiodes (APD) is characterized

Bowers, John

488

Donor-vacancy pairs in irradiated n-Ge: A searching look at the problem  

SciTech Connect

The present situation concerning the identification of vacancy-donor pairs in irradiated n-Ge is discussed. The challenging points are the energy states of these defects deduced from DLTS spectra. Hall effect data seem to be at variance with some important conclusions drawn from DLTS measurements. Critical points of the radiation-produced defect modeling in n-Ge are highlighted.

Emtsev, Vadim; Oganesyan, Gagik [IoffePhysicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ulitsa 26, 194021 St. Petersburg (Russian Federation)

2014-02-21T23:59:59.000Z

489

Activation and thermal stability of ultra-shallow B{sup +}-implants in Ge  

SciTech Connect

The activation and thermal stability of ultra-shallow B{sup +} implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B{sup +} implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B{sup +} implants at 2, 4, and 6 keV to fluences ranging from 5.0 Multiplication-Sign 10{sup 13} to 5.0 Multiplication-Sign 10{sup 15} cm{sup -2} was studied using micro Hall effect measurements after annealing at 400-600 Degree-Sign C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 Degree-Sign C for 60 s was characterized by channeling analysis with a 650 keV H{sup +} beam by utilizing the {sup 11}B(p, {alpha})2{alpha} nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 Degree-Sign C.

Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Petersen, D. H. [DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); Hansen, O. [DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); CINF, Center for Individual Nanoparticle Functionality, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Lin, R.; Nielsen, P. F. [CAPRES A/S, Scion-DTU, DK-2800 Kgs. Lyngby (Denmark); Romano, L. [IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Doyle, B. L. [Sandia National Laboratories, MS-1056, Albuquerque, New Mexico 87185 (United States); Kontos, A. [Applied Materials, Gloucester, Massachusetts 01930 (United States)

2012-12-15T23:59:59.000Z

490

GE, Clean Energy Fuels Partner to Expand Natural Gas Highway | OpenEI  

Open Energy Info (EERE)

GE, Clean Energy Fuels Partner to Expand Natural Gas Highway GE, Clean Energy Fuels Partner to Expand Natural Gas Highway Home > Groups > Clean and Renewable Energy Jessi3bl's picture Submitted by Jessi3bl(15) Member 16 December, 2012 - 19:18 clean energy Clean Energy Fuels energy Environment Fuel GE Innovation Partnerships Technology Innovation & Solutions Transportation Trucking GE, Clean Energy Fuels Partner to Expand 'Natural Gas Highway' GE and Clean Energy Fuels announced a collaboration to expand the infrastructure for natural gas transportation in the United States. The agreement supports Clean Energy's efforts in developing America's Natural Gas Highway, a fueling network that will enable trucks to operate on liquefied natural gas coast to coast and border to border. Clean Energy Fuels will initially purchase two ecomagination-qualified

491

STATEMENT OF CONSIDERATIONS REQUEST BY GE ENERGY (USA) LLC, FOR AN ADVANCE WAIVER OF  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

902; W(A)-2012-019; CH-1662 902; W(A)-2012-019; CH-1662 GE Energy (USA) LLC (GE), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled, "Seeping Studies to Evaluate the Benefits of an Advanced Dry Feed System on the Use of Low-Rank Coal". Under this agreement, GE will demonstrate the advantage of using GE's new, advanced dry feed system (Posimetric Feed System-PFS) for converting low rank coal to electrical power in an IGCC plant configured for 90% Carbon Capture Utilization and Storage (CCUS). The PFS is centered on GE's proprietary Posimetric Feeder, a mechanical device that behaves like a particulate solids pump and is capable of pressurizing dry, ground coal to over 100 psi

492

Titan Propels GE Wind Turbine Research into New Territory | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

Features Features 2014 2013 2012 2011 2010 News Home | ORNL | News | Features | 2013 SHARE Titan Propels GE Wind Turbine Research into New Territory Simulations of freezing water can help engineers design better blades GE simulated hundreds of water droplets, each including one million molecules. Simulations accelerated at least 200 times over pre-GPU estimates permitting GE to study the nucleation of individual ice molecules.Vizualization by M. Matheson (ORNL) GE simulated hundreds of water droplets, each including one million molecules. Simulations accelerated at least 200 times over pre-GPU estimates permitting GE to study the nucleation of individual ice molecules.Vizualization by M. Matheson (ORNL) (hi-res image) The amount of global electricity supplied by wind, the world's fastest

493

VEA-0016 - In the Matter of GE Appliances | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6 - In the Matter of GE Appliances 6 - In the Matter of GE Appliances VEA-0016 - In the Matter of GE Appliances Sub-Zero Freezer Co. (Sub-Zero), GE Appliances (GE), and Whirlpool Corporation (Whirlpool) filed appeals of our November 3, 2000 decision, granting Viking Range Corporation (Viking) a six-month exception from the 2001 energy appliance efficiency standards for built-in refrigerators. Viking Range Corp., 28 DOE ¶ 81,002 (2000). As discussed below, we have granted the appeals in part. As a result, the six-month exception will be limited to 475 refrigerators per month and will be subject to a monthly reporting requirement. vea0015-16-17.pdf More Documents & Publications VEH-0015 - In the Matter of Sub-Zero Freezer Co. VEA-0015 - In the Matter of Sub-Zero Freezer Co. VEA-0017 - In the Matter of Whirlpool Corporation

494

BTATEMENT OF CONBZDRUATIOHN REQUEST BY GENERAL ELECTRIC COMPANY(GE) FOR AN ADVANCED WAIVER OF  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DEC. -15' 97(MON) 00:19 IPL DO DEC. -15' 97(MON) 00:19 IPL DO TEL:I 630 5 2779 P. 002 BTATEMENT OF CONBZDRUATIOHN REQUEST BY GENERAL ELECTRIC COMPANY(GE) FOR AN ADVANCED WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER COOPERATIVE AGREEMENT NO. DE-FC36-97GO10236, W(A)-97-024, CH-0929 The Petitioner, General Electric Company (GE), was awarded this cooperative agreement in response to a proposal for an affordable compact fluorescent lamp (CFL). The initial phase of this work is being performed under DOE Contract No. DE-FC36-97G010236. GE has requested a waiver of domestic and foreign patent rights for all subject inventions under this agreement. As brought out in GE's response to questions 2& 3, the total estimated cost of the project is $1,117,342 with GE paying 25% and DOE providing the balance.

495

Mn-doping-induced itinerant-electron ferromagnetism in Cr2GeC  

Science Journals Connector (OSTI)

The magnetism of the Mn+1AXn phase, Cr2GeC, and its Mn-doped system, (Cr1?xMnx)2GeC (x?0.25), synthesized via a solid state reaction, was investigated systematically. Cr2GeC is in a spin-unpolarized state, but the ferromagnetic band polarization is induced immediately by the Mn doping. The Curie temperature, TC, and the spontaneous moment, ps, increase almost proportionally to the Mn concentration, strongly suggesting that Cr2GeC is located in the vicinity of a ferromagnetic quantum critical point. The strong concentration dependence of peff/ps, where peff is the effective moment in the paramagnetic state, indicates that the ferromagnetism appearing in the Mn-doped Cr2GeC can be classified as a typical itinerant-electron ferromagnetism in a wide range of the degree of electron localization.

Z. Liu; T. Waki; Y. Tabata; H. Nakamura

2014-02-28T23:59:59.000Z

496

Ohmic contact on n-type Ge using Yb-germanide  

SciTech Connect

Poor ohmic contact by Fermi-level pinning to valence band (E{sub V}) edge is one of the major challenges for germanium (Ge) n-type metal-oxide-semiconductor field-effect transistor (nMOSFET). Using low work-function rare-earth ytterbium (Yb), good ohmic contact on n-type Ge with alleviated Fermi-level pinning was demonstrated. Such ohmic behavior depends strongly on the germanide formation condition, where much degraded ohmic contact at 600 Degree-Sign C rapid thermal annealing is due to the lower Yb/Ge composition found by energy-dispersive x-ray spectroscopy. The ohmic behavior of Yb-germanide/n-type-Ge has high potential for future high-performance Ge nMOSFET application.

Zheng Zhiwei; Liu Ming [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Ku, Teng-Chieh; Chin, Albert [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

2012-11-26T23:59:59.000Z

497

In-situ monitoring of surface hydrogen on the a-SiGe:H films  

SciTech Connect

The bonded hydrogen on the growing surface of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy films has been investigated by use of infrared reflection absorption spectroscopy (IR-RAS). When the alloy films are Si-rich, the surface hydrogen bonded to Si atoms is found to behave in a similar way to those on the hydrogenated amorphous silicon (a-Si:H) films. This means that the thermal desorption stability of surface Si hydride species is not significantly affected by the coexistence of a small amount (typically 20 at.%) of Ge. On the contrary, the desorption behavior of surface hydrogen depends on the alloy composition when the a-SiGe:H films are Ge-rich. A surface reaction scheme is provided in an attempt to explain this series of behavior in surface hydrogen on the a-SiGe:H films.

Toyoshima, Y.; Ganguly, G.; Ikeda, T.; Saitoh, K.; Kondo, M.; Matsuda, A.

1997-07-01T23:59:59.000Z

498

Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy  

SciTech Connect

Infrared electroluminescence was observed from GeSn/Ge p-n heterojunction diodes with 8% Sn, grown by molecular beam epitaxy. The GeSn layers were boron doped, compressively strained, and pseudomorphic on Ge substrates. Spectral measurements indicated an emission peak at 0.57 eV, about 50 meV wide, increasing in intensity with applied pulsed current, and with reducing device temperatures. The total integrated emitted power from a single edge facet was 54 {mu}W at an applied peak current of 100 mA at 100 K. These results suggest that GeSn-based materials maybe useful for practical light emitting diodes operating in the infrared wavelength range near 2 {mu}m.

Gupta, Jay Prakash; Bhargava, Nupur; Kim, Sangcheol; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)] [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States); Adam, Thomas [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)] [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)

2013-06-24T23:59:59.000Z

499

Mn solid solutions in self-assembled Ge/Si (001) quantum dot heterostructures  

SciTech Connect

Heteroepitaxial Ge{sub 0.98}Mn{sub 0.02} quantum dots (QDs) on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicators of second phase formation in the surface morphology. We show that Mn forms a dilute solid solution in the Ge quantum dot layer, and a significant fraction of the Mn partitions into a sparse array of buried, Mn-enriched silicide precipitates directly underneath a fraction of the Ge superdomes. The magnetic response from the ultra-thin film indicates the absence of robust room temperature ferromagnetism, perhaps due to anomalous intermixing of Si into the Ge quantum dots.

Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

2012-12-10T23:59:59.000Z

500

An ultra-thin buffer layer for Ge epitaxial layers on Si  

SciTech Connect

Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)] [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Sawano, K. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)] [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)

2013-03-25T23:59:59.000Z