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  1. nr | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    nr | National Nuclear Security Administration Facebook Twitter Youtube Flickr RSS People Mission Managing the Stockpile Preventing Proliferation Powering the Nuclear Navy Emergency Response Recapitalizing Our Infrastructure Countering Nuclear Terrorism About Our Programs Our History Who We Are Our Leadership Our Locations Budget Our Operations Library Bios Congressional Testimony Fact Sheets Newsletters Press Releases Photo Gallery Jobs Apply for Our Jobs Our Jobs Working at NNSA Blog Home / nr

  2. nr

    National Nuclear Security Administration (NNSA)

    %2A en Powering the Nuclear Navy http:nnsa.energy.govourmissionpoweringnavy

    Page...

  3. nr

    National Nuclear Security Administration (NNSA)

    4%2A en Powering the Nuclear Navy http:www.nnsa.energy.govourmissionpoweringnavy

    Page...

  4. LANSCE | Lujan Center | Highlights | Neutron Reflectometry (NR) at Lujan

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Center Helps To Understand the Performance of Radiation-Resistant Materials Neutron Reflectometry (NR) at Lujan Center Helps To Understand the Performance of Radiation-Resistant Materials Precipitation of implanted He is a major concern for the performance and survivability of plasma-facing components in future fusion reactors. In the Applied Physics Letters 98, 241913 (2011) *, the use of NR is reported to study the Cu/Nb layered nanocomposites resistive to high He doses. Neutron

  5. Microsoft Word - DE-NR0000031-075.doc

    National Nuclear Security Administration (NNSA)

    ITEM NO. SUPPLIES/SERVICES QUANTITY UNIT UNIT PRICE AMOUNT NAME OF OFFEROR OR CONTRACTOR 2 183 CONTINUATION SHEET REFERENCE NO. OF DOCUMENT BEING CONTINUED PAGE OF BECHTEL MARINE PROPULSION CORPORATION (A) (B) (C) (D) (E) (F) DE-NR0000031/075 a. Clause 4., Changes, is amended by removing the name G. W. Twardowski. Therefore, page 2 of Section H is deleted in its entirety and replaced with the new page 2 attached hereto. b. Clause 26., Responsible Corporate Official, is amended by inserting

  6. The LANL C-NR counting room and fission product yields

    SciTech Connect (OSTI)

    Jackman, Kevin Richard

    2015-09-21

    This PowerPoint presentation focused on the following areas: LANL C-NR counting room; Fission product yields; Los Alamos Neutron wheel experiments; Recent experiments ad NCERC; and Post-detonation nuclear forensics

  7. Activation of nuclear receptor NR5A2 increases Glut4 expression and glucose metabolism in muscle cells

    SciTech Connect (OSTI)

    Bolado-Carrancio, A.; Riancho, J.A.; Sainz, J.; Rodrguez-Rey, J.C.

    2014-04-04

    Highlights: NR5A2 expression in C2C12 is associated with myotube differentiation. DLPC induces an increase in GLUT4 levels and glucose uptake in C2C12 myotubes. In high glucose conditions the activation of NR5A2 inhibits fatty acids oxidation. - Abstract: NR5A2 is a nuclear receptor which regulates the expression of genes involved in cholesterol metabolism, pluripotency maintenance and cell differentiation. It has been recently shown that DLPC, a NR5A2 ligand, prevents liver steatosis and improves insulin sensitivity in mouse models of insulin resistance, an effect that has been associated with changes in glucose and fatty acids metabolism in liver. Because skeletal muscle is a major tissue in clearing glucose from blood, we studied the effect of the activation of NR5A2 on muscle metabolism by using cultures of C2C12, a mouse-derived cell line widely used as a model of skeletal muscle. Treatment of C2C12 with DLPC resulted in increased levels of expression of GLUT4 and also of several genes related to glycolysis and glycogen metabolism. These changes were accompanied by an increased glucose uptake. In addition, the activation of NR5A2 produced a reduction in the oxidation of fatty acids, an effect which disappeared in low-glucose conditions. Our results suggest that NR5A2, mostly by enhancing glucose uptake, switches muscle cells into a state of glucose preference. The increased use of glucose by muscle might constitute another mechanism by which NR5A2 improves blood glucose levels and restores insulin sensitivity.

  8. 100-NR-2 Apatite Treatability Test FY09 Status: High Concentration Calcium-Citrate-Phosphate Solution Injection for In Situ Strontium-90 Immobilization

    SciTech Connect (OSTI)

    Vermeul, Vincent R.; Fritz, Brad G.; Fruchter, Jonathan S.; Szecsody, James E.; Williams, Mark D.

    2009-12-16

    100-NR-2 Apatite Treatability Test FY09 Status: High Concentration Calcium-Citrate-Phosphate Solution Injection for In Situ Strontium-90 Immobilization INTERIM LETTER REPORT

  9. Pacific Northwest National Laboratory Apatite Investigation at the 100-NR-2 Quality Assurance Project Plan

    SciTech Connect (OSTI)

    Fix, N. J.

    2008-03-28

    This Quality Assurance Project Plan provides the quality assurance requirements and processes that will be followed by staff working on the 100-NR-2 Apatite Project. The U.S. Department of Energy, Fluor Hanford, Inc., Pacific Northwest National Laboratory, and the Washington Department of Ecology agreed that the long-term strategy for groundwater remediation at 100-N would include apatite sequestration as the primary treatment, followed by a secondary treatment. The scope of this project covers the technical support needed before, during, and after treatment of the targeted subsurface environment using a new high-concentration formulation.

  10. PNNL Apatite Investigation at 100-NR-2 Quality Assurance Project Plan

    SciTech Connect (OSTI)

    Fix, N. J.

    2009-04-02

    In 2004, the U.S. Department of Energy, Fluor Hanford, Inc., Pacific Northwest National Laboratory (PNNL), and the Washington Department of Ecology agreed that the long-term strategy for groundwater remediation at the 100-N Area would include apatite sequestration as the primary treatment, followed by a secondary treatment if necessary. Since then, the agencies have worked together to agree on which apatite sequestration technology has the greatest chance of reducing strontium-90 flux to the Columbia River. This Quality Assurance Project Plan provides the quality assurance requirements and processes that will be followed by staff working on the PNNL Apatite Investigation at 100-NR-2 Project. The plan is designed to be used exclusively by project staff.

  11. E&nr Ph. S. W.. Wahhgt~n. D.C. 200242174, TIkpbnc (202) 48a60uo

    Office of Legacy Management (LM)

    75' 00.955 L' E&nr Ph. S. W.. Wahhgt~n. D.C. 200242174, TIkpbnc (202) 48a60uo 7117-03.87.cdy.43 23 September 1987 CR CA.d M r. Andrew Wallo, III, NE-23 Division of Facility & Site Decoaunissioning Projects U.S. Department of Energy Germantown, Maryland 20545 Dear M r. Wallo: ELIMINATION RECOMMENDATION -- COLLEGES AND UNIVERSITIES M /4.0-03 kl 77.0% I - The attached elimination reconunendation was prepared in accordance rlL.0~ with your suggestion during our meeting on 22 September. The

  12. 100-NR-2 Apatite Treatability Test: High-Concentration Calcium-Citrate-Phosphate Solution Injection for In Situ Strontium-90 Immobilization

    SciTech Connect (OSTI)

    Vermeul, Vincent R.; Fritz, Brad G.; Fruchter, Jonathan S.; Szecsody, James E.; Williams, Mark D.

    2010-09-01

    Following an evaluation of potential strontium-90 (90Sr) treatment technologies and their applicability under 100-NR-2 hydrogeologic conditions, the U.S. Department of Energy (DOE), Fluor Hanford, Inc. (now CH2M Hill Plateau Remediation Company [CHPRC]), Pacific Northwest National Laboratory, and the Washington State Department of Ecology agreed that the long-term strategy for groundwater remediation at the 100-N Area should include apatite as the primary treatment technology. This agreement was based on results from an evaluation of remedial alternatives that identified the apatite permeable reactive barrier (PRB) technology as the approach showing the greatest promise for reducing 90Sr flux to the Columbia River at a reasonable cost. This letter report documents work completed to date on development of a high-concentration amendment formulation and initial field-scale testing of this amendment solution.

  13. Interim Report: 100-NR-2 Apatite Treatability Test: Low Concentration Calcium Citrate-Phosphate Solution Injection for In Situ Strontium-90 Immobilization

    SciTech Connect (OSTI)

    Williams, Mark D.; Fritz, Brad G.; Mendoza, Donaldo P.; Rockhold, Mark L.; Thorne, Paul D.; Xie, YuLong; Bjornstad, Bruce N.; Mackley, Rob D.; Newcomer, Darrell R.; Szecsody, James E.; Vermeul, Vincent R.

    2008-07-11

    Following an evaluation of potential Sr-90 treatment technologies and their applicability under 100-NR-2 hydrogeologic conditions, U.S. Department of Energy, Fluor Hanford, Inc., Pacific Northwest National Laboratory, and the Washington Department of Ecology agreed that the long-term strategy for groundwater remediation at 100-N Area will include apatite sequestration as the primary treatment, followed by a secondary treatment if necessary (most likely phytoremediation). Since then, the agencies have worked together to agree on which apatite sequestration technology has the greatest chance of reducing Sr-90 flux to the river at a reasonable cost. In July 2005, aqueous injection, (i.e., the introduction of apatite-forming chemicals into the subsurface) was endorsed as the interim remedy and selected for field testing. Studies are in progress to assess the efficacy of in situ apatite formation by aqueous solution injection to address both the vadose zone and the shallow aquifer along the 300 ft of shoreline where Sr-90 concentrations are highest. This report describes the field testing of the shallow aquifer treatment.

  14. GE??????(??)?????????? |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE() Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in...

  15. GE??????????????????? ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in...

  16. Summary of NR Program Prometheus Efforts

    SciTech Connect (OSTI)

    Ashcroft, John; Eshelman, Curtis

    2007-01-30

    The Naval Reactors Program led work on the development of a reactor plant system for the Prometheus space reactor program. The work centered on a 200 kWe electric reactor plant with a 15-20 year mission applicable to nuclear electric propulsion (NEP). After a review of all reactor and energy conversion alternatives, a direct gas Brayton reactor plant was selected for further development. The work performed subsequent to this selection included preliminary nuclear reactor and reactor plant design, development of instrumentation and control techniques, modeling reactor plant operational features, development and testing of core and plant material options, and development of an overall project plan. Prior to restructuring of the program, substantial progress had been made on defining reference plant operating conditions, defining reactor mechanical, thermal and nuclear performance, understanding the capabilities and uncertainties provided by material alternatives, and planning non-nuclear and nuclear system testing. The mission requirements for the envisioned NEP missions cannot be accommodated with existing reactor technologies. Therefore concurrent design, development and testing would be needed to deliver a functional reactor system. Fuel and material performance beyond the current state of the art is needed. There is very little national infrastructure available for fast reactor nuclear testing and associated materials development and testing. Surface mission requirements may be different enough to warrant different reactor design approaches and development of a generic multi-purpose reactor requires substantial sacrifice in performance capability for each mission.

  17. Summary of NR Program Prometheus Efforts

    SciTech Connect (OSTI)

    J Ashcroft; C Eshelman

    2006-02-08

    The Naval Reactors Program led work on the development of a reactor plant system for the Prometheus space reactor program. The work centered on a 200 kWe electric reactor plant with a 15-20 year mission applicable to nuclear electric propulsion (NEP). After a review of all reactor and energy conversion alternatives, a direct gas Brayton reactor plant was selected for further development. The work performed subsequent to this selection included preliminary nuclear reactor and reactor plant design, development of instrumentation and control techniques, modeling reactor plant operational features, development and testing of core and plant material options, and development of an overall project plan. Prior to restructuring of the program, substantial progress had been made on defining reference plant operating conditions, defining reactor mechanical, thermal and nuclear performance, understanding the capabilities and uncertainties provided by material alternatives, and planning non-nuclear and nuclear system testing. The mission requirements for the envisioned NEP missions cannot be accommodated with existing reactor technologies. Therefore concurrent design, development and testing would be needed to deliver a functional reactor system. Fuel and material performance beyond the current state of the art is needed. There is very little national infrastructure available for fast reactor nuclear testing and associated materials development and testing. Surface mission requirements may be different enough to warrant different reactor design approaches and development of a generic multi-purpose reactor requires substantial sacrifice in performance capability for each mission.

  18. NR Pu SEIS Advisory 07272012_Clean

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ( 423) 7 51---8400 Valley A uthority: r rgolden@tva.gov DOE A nnounces I ssuance o f D raft S upplemental E nvironmental S tudy o n P lutonium D isposition WASHINGTON, D C - T...

  19. Microsoft Word - DE-NR0000031-075.doc

    National Nuclear Security Administration (NNSA)

    ... Practices 471.2-1C Manual for Classified Matter Protection and Control 473.1-1 Physical Protection Program Manual 473.2-1A Firearms Qualification Courses Manual 473.2-2 ...

  20. NR Hanford OCMED Awd4 June 8 2012.docx

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Management Consolidated Business Center 250 E. 5 th Street, Suite 500, Cincinnati, Ohio 45202 Media Contact: June 8, 2012 Cameron Hardy 509-308-4947 Cameron.hardy@rl.gov DOE ...

  1. 2008-07-31 Draft NR Block Template

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Customer Name acquires from an identified or unidentified electricity-producing unit by contract purchase, and for which the amount received by Customer Name does not...

  2. Hanford Site - 100-NR-2 | Department of Energy

    Office of Environmental Management (EM)

    Exist? Yes Sole Source Aquifer? No Basis for Exit Strategy: Design based Completion Environmental Indicators (EIs) Groundwater Migration Under Control? No Current Human...

  3. NR-WFR Plan for Comment July 8 2013.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Monday, July 8, 2013 Bill Taylor - 803-952-8564 bill.taylor@srs.gov Public Comment Sought for Savannah River Site Workforce Restructuring Plan AIKEN, SC -- The Department of...

  4. NR SRNS Contract Extension Sept 6 2012.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    September 6, 2012 Bill Taylor, 803-952-8564 bill.taylor@srs.gov DOE to Extend Savannah River Nuclear Solutions Contract at Savannah River Site to September 2016 Aiken, SC -- The...

  5. NR WIPP Transportation Award Jan 9 2012f.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Environmental Management Consolidated Business Center 250 E. 5 th Street, Suite 500, Cincinnati, Ohio 45202 Media Contact: For Immediate Release Bill Taylor 803-952-8564 January 9, 2012 bill.taylor@srs.gov DOE Selects Two Small Businesses to Truck Transuranic Waste to New Mexico Waste Isolation Pilot Plant Cincinnati - The Department of Energy (DOE) today awarded two small-business contracts to CAST Specialty Transportation, Inc. and Visionary Solutions, LLC, to provide trucking services to

  6. DOE and HBCU MOU FINAL NR.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AIKEN, SC 29802 NEWS MEDIA CONTACTS: IMMEDIATE RELEASE Hope Derrick, (803) 799-1100 Thursday, September 3, 2009 hope.derrick@mail.house.gov Julie Petersen, (803) 952-7690 julie.petersen@srs.gov DOE AND HBCUs PARTNER TO ADVANCE EDUCATIONAL AND FUTURE EMPLOYMENT OPPORTUNITIES FOR MINORITY STUDENTS IN SOUTH CAROLINA AND NORTHEAST GEORGIA Columbia, SC - Today the U.S. Department of Energy's (DOE) Office of Environmental Management (EM) and nine Historically Black Colleges and Universities (HBCUs) of

  7. NR Pu SEIS Advisory 07152010 _final_.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Municipal Center, North Augusta, SC, from 5:30 p.m. to 8:00 p.m. - August 24, 2010 - Best Western Stevens Inn, Carlsbad, NM, from 5:30 p.m. to 8:00 p.m. Savannah River...

  8. Microsoft Word - 090723NR200WGW.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    move from the center of the Hanford Site to the river." The new treatment system will pump contaminated water from the ground and remove several chemical and radioactive...

  9. DOE-NR CAB New Members.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on the Citizens Advisory Board. The Savannah River Site (SRS) Citizens Advisory Board (CAB) is a community board that provides advice and recommendations, from a community...

  10. NR-CAB Meeting March 25-26 2013.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Management cleanup programs. For addition information on the SRS Citizens Advisory Board visit: http:www.srs.govgeneraloutreachsrs-cabsrs-cab.html -DOE- SR-13-01...

  11. Microsoft Word - NR WIPP CONTRACT EXTENSION MAY 3 2010.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DOE Extends Management and Operations Contract at Waste Isolation Pilot Plant Carlsbad, NM. - The U.S. Department of Energy's Waste Isolation Pilot Plant (WIPP) today announced a two-year extension of the Washington TRU Solutions LLC management and operations (M&O) contract. As the WIPP M&O contractor, Washington TRU Solutions is responsible for managing the National Transuranic (TRU) Waste Program, which includes retrieval, characterization, transportation, and disposal activities at

  12. Microsoft Word - NR WIPP CONTRACT EXTENSION MAY 3 2010.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DOE Extends Management and Operations Contract at Waste Isolation Pilot Plant Carlsbad, NM. - The U.S. Department of Energy's Waste Isolation Pilot Plant (WIPP) today announced a...

  13. c5nr01856k 9878..9885 ++

    Office of Scientific and Technical Information (OSTI)

    Nanoscale View Article Online View Journal | View Issue 8 3 a i s 8 § £ 1 CrossMark click for updates Cite this: Nanoscale, 2015, 7, 9878 A new reversal mode in exchange coupled antiferromagnetic/ferromagnetic disks: distorted viscous vortexf Dustin A. Gilbert,3 Li Ye,a Aida Varea,b Sebastia Agramunt-Puig,c Nuria del Valle,c Carles Navau,c Jose Francisco Lopez-Barbera,c,d Kristen S. Buchanan,e Axel Hoffmann,f Alvar Sanchez,c Jordi Sort,c,g Kai Liu*a and Josep Nogues*c,d,g Received 23rd March

  14. Microsoft Word - DE-NR0000031-001.rtf

    National Nuclear Security Administration (NNSA)

    SDLlCITATIDNIMDDIFICATIDN OF CONTRACT 1:.CONTRACTID CODE IPAGE OF PAGES DE-N ROOOOO31 1 I 27 2. AMENDMENT/MODIFICATION NO. 3. EFFECTIVE DATE 4. REQUISmONJPURCHASE REQ. NO. I 5. PROJECT NO. (If applicable) 001 Same as Block l6C NlA 6. ISSUED BY CODE 7. ADMINISTERED BY (If other than Item 6) Code I U.S. Department of Energy Pittsburgh Naval Reactors Office P.O. Box 109 West Mifflin, PA 15122-0109 8. NAME AND ADDRESS OF CONTRACTOR (No. street, county, State end ZIP Code) J1... 9A. AMENDMENT OF

  15. Microsoft Word - DE-NR0000031-FY11.doc

    National Nuclear Security Administration (NNSA)

    .~._-_._.-_._.._----------------------- AMENDMENT OF SOLICITATlON/MOOlFICATlON OF CONTRACT II. CONTRACT 10 CODE IPAGE~S 1 I 192 2. AMENDMENTIMODlFICATIONNO. 3. EFFECTIVE DATE 4. REQUISInONlPtJRCHASE REQ. NO. r PROJECT NO. (If~") 032 See Block 16C 6. ISSUED BY CODE 01111 7. ADMINISTEREDBY (lfotllerlMnltem 6) CODE T01111 NRLFO - PGH NRLFO - PGH US DEPARTMENT OF ENERGY US DEPARTMENT OF ENERGY NAVAL REACTORS LABORATORY FIELD OFFICE - PGH NAVAL REACTORS LABORATORY FIELD OFF POBOX 109 POBOX 109

  16. ???? GE?? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn...

  17. N.R. 20 FOSSIL-FUELED POWER PLANTS; 21 SPECIFIC NUCLEAR REACTORS...

    Office of Scientific and Technical Information (OSTI)

    20 FOSSIL-FUELED POWER PLANTS; 21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS; 14 SOLAR ENERGY; 15 GEOTHERMAL ENERGY; GEOTHERMAL POWER PLANTS; COMPUTERIZED SIMULATION; HEAT...

  18. 100-NR-2 Apatite Treatability Test: Fall 2010 Tracer Infiltration Test (White Paper)

    SciTech Connect (OSTI)

    Vermeul, Vincent R.; Fritz, Brad G.; Fruchter, Jonathan S.; Greenwood, William J.; Johnson, Timothy C.; Horner, Jacob A.; Strickland, Christopher E.; Szecsody, James E.; Williams, Mark D.

    2011-04-14

    The primary objectives of the tracer infiltration test were to 1) determine whether field-scale hydraulic properties for the compacted roadbed materials and underlying Hanford fm. sediments comprising the zone of water table fluctuation beneath the site are consistent with estimates based laboratory-scale measurements on core samples and 2) characterize wetting front advancement and distribution of soil moisture achieved for the selected application rate. These primary objectives were met. The test successfully demonstrated that 1) the remaining 2 to 3 ft of compacted roadbed material below the infiltration gallery does not limit infiltration rates to levels that would be expected to eliminate near surface application as a viable amendment delivery approach and 2) the combined aqueous and geophysical monitoring approaches employed at this site, with some operational adjustments based on lessons learned, provides an effective means of assessing wetting front advancement and the distribution of soil moisture achieved for a given solution application. Reasonably good agreement between predicted and observed tracer and moisture front advancement rates was observed. During the first tracer infiltration test, which used a solution application rate of 0.7 cm/hr, tracer arrivals were observed at the water table (10 to 12 ft below the bottom of the infiltration gallery) after approximately 5 days, for an advancement rate of approximately 2 ft/day. This advancement rate is generally consistent with pre-test modeling results that predicted tracer arrival at the water table after approximately 5 days (see Figure 8, bottom left panel). This agreement indicates that hydraulic property values specified in the model for the compacted roadbed materials and underlying Hanford formation sediments, which were based on laboratory-scale measurements, are reasonable estimates of actual field-scale conditions. Additional work is needed to develop a working relationship between resistivity change and the associated change in moisture content so that 4D images of moisture content change can be generated. Results from this field test will be available for any future Ca-citrate-PO4 amendment infiltration tests, which would be designed to evaluate the efficacy of using near surface application of amendments to form apatite mineral phases in the upper portion of the zone of water table fluctuation.

  19. SRS Biomass Startup NR-03 12 12 - DOE FINAL.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    25 full- time jobs onsite and support the local logging community. "Developing clean, renewable sources is an important part of President Obama's all-of-the-above approach to...

  20. http://www.bls.gov/news.release/osh.nr0.htm

    National Nuclear Security Administration (NNSA)

    industry injury and illness cases reported nationally in 2009 were of a more serious nature that involved days away from work, job transfer, or restriction--commonly referred to...

  1. http://www.bls.gov/news.release/osh.nr0.htm

    National Nuclear Security Administration (NNSA)

    ... compared to 2008--led by a decline among the 'Skin diseases' category which accounted for nearly 47 percent of the decline in illness cases among private industry establishments. ...

  2. NR-SRS TRU Waste Shipments Milestone June 4 2013.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the Savannah River Site met two new milestone records towards analyzing, preparing, packaging and shipping radioactive transuranic (TRU) waste bound for a disposal site in New...

  3. Microsoft Word - NR DRAFT RFP WIPP M&O APR 1 2011

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    April 1, 2011 william.taylor@emcbc.doe.gov DOE Issues Draft Request for Proposals Seeking Contractor to Manage, Operate Waste Isolation Pilot Plant Cincinnati -- The U.S. Department of Energy (DOE) issued a Draft Request for Proposal (RFP) seeking a management and operations contractor to maintain the Waste Isolation Pilot Plan (WIPP) and manage the DOE National Transuranic Waste (TRU) Program in Carlsbad, New Mexico. The estimated value of the anticipated contract is from $130 to $160 million

  4. Microsoft Word - NR WIPP TECH ASSISTANCE RFQ MAY 3 2010.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DOE Seeks Technical Assistance Contractor at New Mexico Waste Isolation Pilot Plant Cincinnati -- The Department of Energy (DOE) issued a Request for Quotation (RFQ) today for a technical assistance contract to the Carlsbad Field Office and the Waste Isolation Pilot Project (WIPP) in Carlsbad, NM. This acquisition is under a General Services Administration (GSA) Federal Supply Schedule. The Department intends to award a single task order with a three-year performance period with options that can

  5. Microsoft Word - NR WIPP TRANSPORT RFP MARCH 30 2011f2

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    March 30, 2011 william.taylor@emcbc.doe.gov DOE Seeks Trucking Services for Transuranic Waste Shipments Cincinnati -- The Department of Energy (DOE) today will issue a Request for Proposals for the continuation of carrier services to transport transuranic waste (TRU) between DOE sites and the Waste Isolation Pilot Plant (WIPP) site, near Carlsbad, New Mexico. The transportation of TRU waste is accomplished by contracted trucking carriers that ship the waste via public highways on custom designed

  6. GE Global Research Contact | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Contact Us Looking for more details? Please contact one of these individuals or visit the Newsroom for the latest information. Home > About GE Global Research > Contact Us GE Global Research 1 Research Circle, Niskayuna, NY 12309, USA Todd Alhart +1.518.387.7914 todd.alhart@ge.com Communications and Public Relations GE Brazil Technology Center Rio de Janeiro, Brazil Natalia Albuquerque +55 21 3548-6193 natalia.albuquerque@ge.com Communications and Public Relations GE China Technology

  7. GE Global Research Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    About GE Global Research > Leadership Leadership GE Global Research Centers rely on the guidance of visionary leaders with deep technical knowledge on the ground at each of our sites. A photo of Vic Abate Vic Abate Chief Technology Officer GE Global Research As senior vice president and chief technology officer for GE, Vic is responsible for one of the world's largest and most diversified industrial research and technology organizations. Vic leads GE's 50,000 engineers and scientists and G...

  8. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Announces 100 Businesses Led by GE to Join 500 Million Partnership with State to Dev... BigDataImageH 2014.06.18 GE Wins Manufacturing Leadership Award for Development of...

  9. Connecting | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Connecting Through software, the Industrial Internet and the sharing of ideas, we're bringing people together all around the world. Home > Impact > Connecting Global Research and GE Capital: Middle Market Collaboration In 2013, a partnering initiative between Global Research and GE Capital resulted in dozens of middle market companies... Read More » GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced

  10. Building | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building We're creating infrastructure, refining materials and assembling technologies that accommodate our constantly changing world. Home > Impact > Building Bringing a Digital Mindset to Manufacturing The digital age will provide manufacturing insights that will save money and transform how we work across supply chains. By... Read More » What is the GE store? Mark Little, CTO & Head of Global Research at GE, describes what the GE Store means and why it's important to GE. The GE...

  11. GE Global Research Locations | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Locations GE Global Research is innovating around the clock. Select one of our locations to learn more about operations there.GE Global Research is innovating around the clock. Select a location to learn more about our operations. Home > Locations GE Global Research is ALWAYS OPEN Already know about our locations? Experience a special look at a day in our life around the world! See What We're Doing Dhahran, Saudi Arabia Founded: 2015 Employees: 15 Focus Areas: Material Characterization,

  12. GE Researcher Discusses Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Researcher: Putting GE Beliefs into Action Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Researcher: Putting GE Beliefs into Action Joseph Vinciquerra 2015.01.30 Several weeks ago I had the privilege of attending the 2015 Global Leadership Meeting held near Lake George, New York. As a first time attendee, I

  13. GE Global Research Careers | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Finding solutions in energy, health and home, transportation and finance. Building, ... path at GE Global Research guides scientists' and engineers' individual development. ...

  14. Moving | GE Global Research

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    Moving We're always working on planes, trains and automobiles-and specialized ways to move people and products efficiently and sustainably. Home > Impact > Moving Rail Networks Are Getting Smarter Sources: 2012 GE Annual Report (page 12); Norfolk Southern 2010 sustainability reporter (page 17) North American Freight Railroad... Read More » The GE Store for Technology is Open for Business Welcome to GE Global Research, also known as the GE Store for Technology. Across our global network of

  15. E&nr Ph. S. W.. Wahhgt~n. D.C. 200242174, TIkpbnc (202) 48a60uo

    Office of Legacy Management (LM)

    CT Perrine Field, FL Bloomington, IN Layfayette, IN Note 1 South Bend, IN Note 2 Cambridge, MA Medford, MA Baltimore, MD . 1 NAME (Continued) University of Michigan St. Louis...

  16. GE's Digital Marketplace to Revolutionize Manufacturing | GE...

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    GE's Digital Marketplace to Revolutionize Manufacturing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new...

  17. GE Capital Partnership | GE Global Research

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    Global Research and GE Capital: Middle Market Collaboration Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in...

  18. Building | GE Global Research

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    Building We're creating infrastructure, refining materials and assembling technologies that accommodate our constantly changing world. Home > Impact > Building How Green Is Green? GE's Global Research Center's Ecoassessment Center of Excellence was created to study the impact of GE products and services... Read More » Technology: Driving the Artificial Lift Market Gary Ford, president and CEO of GE Artificial Lift, discusses what the equipment does, the current state of the market and

  19. GE ?????????????????4G?????...

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    GE 4G Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click...

  20. Powering | GE Global Research

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    National Laboratory (Berkeley Lab) are exploring a possible key to energy storage for electric... Read More GE's Dual Piezoelectric Cooling Jets (DCJ) Are Cool and Quiet...

  1. Photonics | GE Global Research

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    Research 1-2-125-v-wind-turbine-technology Learning About Wind Turbine Technology, Motors and Generators GE's Brilliant Factory Lab advances digital manufacturing Bringing a...

  2. What is the GE store |GE Global Research

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    materials, software, and analytics to commercialization, process, and business model best practices. The GE Store allows GE to leapfrog industries, to drive innovation,...

  3. GE Global Research News | GE Global Research

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    Newsroom Our technologies transform GE's businesses and the world. Learn about them, meet our experts and read news coverage about our work. Home > Newsroom Meet Our Experts Our scientists are global leaders in their fields. They welcome media inquiries. Find an Expert » Media Contacts A photograph of Natalia Albuquerque Rio de Janeiro Natalia Albuquerque +55 21 3548-6193 A photograph of Todd Alhart Niskayuna, Oklahoma City, Munich Todd Alhart +1.518.387.7914 A photograph of Tenzin Dechen

  4. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Newsroom Our technologies transform GE's businesses and the world. Learn about them, meet our experts and read news coverage about our work. Home > Newsroom Meet Our Experts Our scientists are global leaders in their fields. They welcome media inquiries. Find an Expert » Media Contacts A photograph of Natalia Albuquerque Rio de Janeiro Natalia Albuquerque +55 21 3548-6193 A photograph of Todd Alhart Niskayuna, Oklahoma City, Munich Todd Alhart +1.518.387.7914 A photograph of Tenzin Dechen

  5. GE Research and Development | GE Global Research

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    I Want to See Game-Changing Technology Work & Life Cool Science STEM Education Most Popular Shuffle Information for Me Game-Changing Technology Work & Life Cool Science STEM Education Most Popular Shuffle Dream team assembles to do the impossible at GRC » Thermal Science Leaders Are Also Researchers » The Dirt on the Cleanroom » Teaming Up With Idea Works Puts Our Tech Into the World » Unimpossible Missions Researchers Tackle the Impossible Unimpossible Missions: GE researchers prove

  6. The GE Store

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    for Aviation. We're even using CT to look at the chemistry of our energy storage batteries and study the properties of new materials being developed for an array of GE...

  7. Invention | GE Global Research

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    Invention Our people drive every scientific advance we make, every day. Find out who they are and what they're thinking right now. Home > Invention Inventors GE Global Research...

  8. About GE Global Research Center | GE Global Research

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    About GE Global Research GE has come a long way since the first bulb gave light. Find out what we're doing now, meet our leaders or contact us with questions. Home > About GE Global Research What We Do Making aircraft engines more efficient. Powering the world with flexible gas turbines. Crunching big data. Pioneering the Industrial Internet. Creating greener ground transportation. Refining medical imaging for the future. GE Global Research has served as the cornerstone of GE innovation for

  9. Powering | GE Global Research

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    Powering Whether generating or distributing power, in familiar or new forms, we're making sure the world has power when and where it's needed. Home > Impact > Powering Unimpossible Missions: GE researchers prove nothing is impossible A team of GE researchers came together over the course of several months to tackle three seemingly impossible missions. They were... Read More » The Building Blocks of Silicon Carbide, a Rising Star In today's fast-paced, high-energy, and highly competitive

  10. Connecting | GE Global Research

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    Connecting Through software, the Industrial Internet and the sharing of ideas, we're bringing people together all around the world. Home > Impact > Connecting Unimpossible Missions: GE researchers prove nothing is impossible A team of GE researchers came together over the course of several months to tackle three seemingly impossible missions. They were... Read More » Physical + Digital = the New Power Couple Birthed from the marriage of physical and digital industrial concepts, Digital

  11. GE and Quirky | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Quirky Idea: Turning Patents Into Consumer Products Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) A Quirky Idea: Turning Patents Into Consumer Products In April 2013, GE and Quirky announced a partnership that introduces a whole new way of inventing. We teamed up with Quirky, the social product development company,

  12. GE Hitachi Nuclear Energy | Open Energy Information

    Open Energy Info (EERE)

    GE Hitachi Nuclear Energy Jump to: navigation, search Name: GE Hitachi Nuclear Energy Place: Wilmington, North Carolina Zip: 28402 Sector: Efficiency, Services Product: GE Hitachi...

  13. GE leads the way in photonics research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE continues leading role in photonics industry - from LED to digital x-ray Click to email ... GE continues leading role in photonics industry - from LED to digital x-ray Danielle ...

  14. GE Global Research Sourcing External Document & Process Repository | GE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research GE Global Research Sourcing External Document & Process Repository Home > GE Global Research Sourcing External Document & Process Repository Supplier Integrity Guide Purchase Order Related Documents: GE Global Research Special Terms of the Contract (security requirements for on-site contractors) New York State Direct Pay Tax Permit This is a tax form that informs suppliers GE Global Research will self-assess and remit sales taxes to New York State. Michigan State

  15. Purdue, GE Collaborate On Advanced Manufacturing | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to GE transformational." Providing more detail on the partnership's focus on digitalization, decentralization and democratization in manufacturing, Abhijit Deshmukh, the...

  16. GE | OpenEI Community

    Open Energy Info (EERE)

    by Jessi3bl(15) Member 16 December, 2012 - 19:18 GE, Clean Energy Fuels Partner to Expand Natural Gas Highway clean energy Clean Energy Fuels energy Environment Fuel GE Innovation...

  17. Chevron, GE form Technology Alliance

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    Chevron, GE form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE Technology Alliance, which will develop and commercialize valuable technologies to solve critical needs for the oil and gas industry. The Alliance builds upon a current collaboration on flow analysis technology for oil and gas wells. It will leverage research and development from GE's newest Global Research Center,

  18. Building | GE Global Research

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    Building We're creating infrastructure, refining materials and assembling technologies that accommodate our constantly changing world. Home > Impact > Building Advanced Laser Manufacturing Tools Deliver Higher Performance In a research lab looking far, far into the future, a team of scientists and engineers from GE are developing next-generation... Read More » The Future of Additive Manufacturing Additive manufacturing has begun to generate real excitement within the larger manufacturing

  19. Curing | GE Global Research

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    Curing We're pioneering medical developments, from robotic healthcare assistants to diagnostic tools and specialized, globally deployed gear. Home > Impact > Curing Invention Factory: How Will We Live Forever? In this episode of Invention Factory - a partnership between GE and Vice - we probe the cutting edge of medical... Read More » Invention Factory: How Will Mind Overcome Matter? In this episode of Invention Factory - a partnership between General Electric and Vice - we explore how

  20. GE's Digital Marketplace to Revolutionize Manufacturing | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE's Digital Marketplace to Revolutionize Manufacturing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Digital Marketplace to Revolutionize Manufacturing GE will lead an effort to create an online community for manufacturing collaboration and data analysis The open source project will build the

  1. GE Opens Research Center in Saudi Arabia | GE Global Research

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    GE's US1 billion investment in Saudi Arabia creates a path for new initiatives in localization, technology innovation and manufacturing to drive country's digital transformation...

  2. Chevron, GE form Technology Alliance

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    Chevron, GE form Technology Alliance Chevron, GE form Technology Alliance The Chevron GE Technology Alliance will develop and commercialize valuable technologies to solve critical needs for the oil and gas industry. February 3, 2014 Los Alamos National Laboratory sits on top of a once-remote mesa in northern New Mexico with the Jemez mountains as a backdrop to research and innovation covering multi-disciplines from bioscience, sustainable energy sources, to plasma physics and new materials. Los

  3. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Predictivity(tm) Industrial Internet Solutions As a key player in GE's commitment to advance the Industrial Internet, the GE Software Center is at work helping industrial organizations use data, analytics, data

  4. Magnetic Refrigeration | GE Global Research

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    Johnson, a materials scientist and project leader on GE's magnetic refrigeration project. ... materials would further improve the competitiveness of magnetic refrigeration technology. ...

  5. GE Innovation and Manufacturing in Europe | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation and Manufacturing in Europe Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Innovation and Manufacturing in Europe Click the image below to see how GE is at work across Europe to change the face of manufacturing. EU graphic You Might Also Like 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN »

  6. GE Partners on Microgrid Project | GE Global Research

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    GE, Utility, Government, and Academia Partner on Microgrid Project Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, Utility, Government, and Academia Partner on Microgrid Project GE Awarded a $1.2M Department of Energy Grant to Design Technology to Keep Electricity Flowing after Catastrophic Weather Events NISKAYUNA,

  7. GE Scientists Experiment With Texas BBQ | GE Global Research

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    GE BBQ Center is open, innovating and serving some delicious BBQ Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The GE BBQ Center is open, innovating and serving some delicious BBQ Lynn DeRose 2015.03.15 This is the third in a five-part series of dispatches from GE's Science of Barbecue Experience at South by

  8. GE Researchers Tackle Three Unimpossible Missions | GE Global Research

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    Unimpossible Missions: GE researchers prove nothing is impossible Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Unimpossible Missions: GE researchers prove nothing is impossible A team of GE researchers came together over the course of several months to tackle three seemingly impossible missions. They were tasked with

  9. Miniaturized Turbine Offers Desalination Solution | GE Global...

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    from ice New solution draws from the GE Store, integrating GE's experience with steam turbine, oil & gas compressors, 3D printing and water processing NISKAYUNA, NY, November 10,...

  10. GE Solar Power | Open Energy Information

    Open Energy Info (EERE)

    GE Solar Power Jump to: navigation, search Name: GE Solar Power Place: Delaware Sector: Solar Product: String representation "The solar busin ... s in July 2004." is too long....

  11. Crowdsourcing Software Announcement | GE Global Research

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    which will employ 400 new software professionals to support these efforts across GE's business portfolio. The Vehicleforge.mil CEED Platform Scientists and engineers from GE...

  12. Brilliant Factories Could Revolutionize Manufacturing | GE Global...

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    materials, software, and analytics to commercialization, process, and business model best practices. The GE Store allows GE to leapfrog industries, to drive innovation,...

  13. GE Global Research in Niskayuna, NY

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    Niskayuna, USA Niskayuna, USA GE Global Research headquarters is the nerve center for innovative work across technologies and collaboration across GE businesses. Click to email...

  14. GE Wind Energy Germany | Open Energy Information

    Open Energy Info (EERE)

    Energy Germany Jump to: navigation, search Name: GE Wind Energy Germany Place: Salzbergen, Germany Zip: 48499 Sector: Wind energy Product: Germany-based, division of GE Wind Energy...

  15. Multiple Irradiation Capsule Experiment (MICE)-3B Irradiation Test of Space Fuel Specimens in the Advanced Test Reactor (ATR) - Close Out Documentation for Naval Reactors (NR) Information

    SciTech Connect (OSTI)

    M. Chen; CM Regan; D. Noe

    2006-01-09

    Few data exist for UO{sub 2} or UN within the notional design space for the Prometheus-1 reactor (low fission rate, high temperature, long duration). As such, basic testing is required to validate predictions (and in some cases determine) performance aspects of these fuels. Therefore, the MICE-3B test of UO{sub 2} pellets was designed to provide data on gas release, unrestrained swelling, and restrained swelling at the upper range of fission rates expected for a space reactor. These data would be compared with model predictions and used to determine adequacy of a space reactor design basis relative to fission gas release and swelling of UO{sub 2} fuel and to assess potential pellet-clad interactions. A primary goal of an irradiation test for UN fuel was to assess performance issues currently associated with this fuel type such as gas release, swelling and transient performance. Information learned from this effort may have enabled use of UN fuel for future applications.

  16. Working at GE Global Research | GE Global Research

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    products and working on lots of different things, and I was convinced that this ideal job didn't exist. I came to find out about the Sensor & Signal Analytics Lab at GE Global...

  17. GE Researcher Explores Science Behind Movie Chappie | GE Global...

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    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  18. Ars Technica Visits GE's China Technology Center | GE Global...

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    Technica visits GE's China Technology Center Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window)...

  19. Laser Manufacturing | GE Global Research

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    Laser Manufacturing at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Laser Manufacturing at GE Global Research Learn how laser sintering, an additive laser manufacturing process practiced at GE Global Research, makes parts from metal powder. You Might Also Like Munich_interior_V 10 Years ON: From

  20. Purdue, GE Collaborate On Advanced Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Purdue, GE to collaborate on advanced manufacturing to enable faster, efficient brilliant factories Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Purdue, GE to collaborate on advanced manufacturing to enable faster, efficient brilliant factories WEST LAFAYETTE, Ind. - Purdue University announced Thursday (Dec. 4,

  1. GE Global Research Experts and Media Contacts | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Newsroom > Experts Experts Our researchers are subject matter experts and welcome media inquiries. To schedule an interview, please contact Todd Alhart. Photograph of Wole Akinyemi Wole Akinyemi Lab Manager Combustion Systems Specialties: diesel engine technologies, combustion, thermo-fluids research Wole joined GE Global Research in 2007 as a senior engineer supporting the research and development of diesel engines. H... Wole joined GE Global Research in 2007 as a senior engineer

  2. Technical Education | GE Global Research

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    Technical Education at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click...

  3. Hybrid Locomotive | GE Global Research

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    Over the last decade, the U.S. government has enacted a number of rules designed to reduce smog and air pollution in cities and towns. For locomotive makers, like GE, that means ...

  4. Sourcing Capabilities | GE Global Research

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    Home > GE Global Research Sourcing External Document & Process Repository > Sourcing Capabilities Sourcing Capabilities The General Electric Company is strongly committed to meet the principles of Public Laws, Federal Acquisition Regulations (FARs), and specific cognizant Government Agency FAR supplemental regulations, and directs that business practices and procedures conform to these Federal laws and regulations. It is the policy of GE Global Research to encourage participation in

  5. Big Data Analysis | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Software We're blending data, analytics and computing know-how into algorithms and programs that drive business and technology forward. Home > Innovation > Software GE Software's Design and User Experience Studio Looking to the future, GE created the Design and Experience Studio dedicated to developing clean, delightful, understandable, and... Read More » GE Predictivity(tm) Industrial Internet Solutions As a key player in GE's commitment to advance the Industrial Internet, the GE

  6. Heat Transfer in GE Jet Engines | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Heat Transfer in GE Jet Engines Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Heat Transfer in GE Jet Engines Todd Wetzel 2012.10.19 Greetings from 31,000 feet. Less than 20 feet to my right is a CFM-56 jet engine, slung under the wing of a 737 taking me to Albuquerque, NM. The 737 is hands-down the most popular

  7. GE Researcher Explores Science Behind Movie Chappie | GE Global Research

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    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic The film "Chappie" is the story of a Police droid, reprogrammed to become

  8. GE leads the way in photonics research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE continues leading role in photonics industry - from LED to digital x-ray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE continues leading role in photonics industry - from LED to digital x-ray Danielle Merfeld, Ph.D. 2015.07.27 Vice President Joseph Biden joined New York Gov. Andrew Cuomo in Rochester, New York

  9. GE Key Partner in Innovation Institutes | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Is Key Partner in Manufacturing Innovation Institutes Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Is Key Partner in Manufacturing Innovation Institutes GE Global Research 2014.02.25 President Obama today announced two new manufacturing innovation institutes. One is focused on digital manufacturing and design

  10. GE Opens Research Center in Saudi Arabia | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE's US$1 billion investment in Saudi Arabia creates a path for new initiatives in localization, technology innovation and manufacturing to drive country's digital transformation by 2020 Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's US$1 billion investment in Saudi Arabia creates a path for new initiatives in

  11. Pi Day | GE Global Research

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    Happy Pi Day from GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Happy Pi Day from GE Global Research 2013.03.13 Chief Scientist Jim Bray shares a few of the many ways Pi is used and poses a question to stump at-home scientists. 1 Comment Comment Name Email Submit Comment Justin 2015.12.12 has our

  12. Milford Wind Corridor Phase I (GE Energy) | Open Energy Information

    Open Energy Info (EERE)

    I (GE Energy) Jump to: navigation, search Name Milford Wind Corridor Phase I (GE Energy) Facility Milford Wind Corridor Phase I (GE Energy) Sector Wind energy Facility Type...

  13. Northern Colorado Wind Energy Center (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Northern Colorado Wind Energy Center (GE) Facility Northern Colorado Wind Energy Center (GE) Sector Wind energy Facility Type Commercial Scale...

  14. 12 GeV! | Jefferson Lab

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    GeV! December 21, 2015 Our upgrade project is called the 12 GeV CEBAF Upgrade Project. At the time CD-4A was achieved, we demonstrated 2.2 GeV per pass. This was 12 GeV! Well, not quite. In fact with more than one pass, we limited ourselves to a little more than 6 GeV with three passes, and to 10.5 GeV with 5.5 passes. It was not felt to be prudent to demand 12 GeV out of the machine immediately after turn on. Operations in the spring of 2015 at high energy, ~10.5 GeV, came to a premature end

  15. GE Shenhua JV | Open Energy Information

    Open Energy Info (EERE)

    Name: GE & Shenhua JV Place: China Product: China based industrial coal gasification joint venture. References: GE & Shenhua JV1 This article is a stub. You can help OpenEI...

  16. User Experience Testing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    or enable JavaScript if it is disabled in your browser. "The demand for user experience (UX) and design within GE is growing," says Greg Petroff, GE Software's (link to...

  17. GE Wind Energy | Open Energy Information

    Open Energy Info (EERE)

    Energy Jump to: navigation, search Name: GE Wind Energy Place: Atlanta, Georgia Zip: GA 30339 Sector: Wind energy Product: GE's wind energy division, formed as a result of the...

  18. GE Scientist Stephan Biller Discusses the Industrial Internet | GE Global

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    Research Manufacturing Scientist Stephan Biller Discusses the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Manufacturing Scientist Stephan Biller Discusses the Industrial Internet Stephan Biller, Chief Manufacturing Scientist at GE Global Research, talked with the Farstuff Podcast about the

  19. GE PowerPoint Template

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    Power of Networks in an Age of Gas Peter Evans, PhD Director Global Strategy & Analytics General Electric 2013 EIA Energy Conference June 17-18, 2013 Washington, DC 2 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Sources of competitive advantage Thomas Edison - GE Founder Natural endowments Creative endowments The U.S. is rich in both 3 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Physical and digital infrastructure Advantage of

  20. Aviation Technology | GE Global Research

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    Aviation We're helping people soar faster, cleaner, higher and better, with futuristic propulsion systems that solve today's flight challenges. Home > Innovation > Aviation Silicon Carbide Applications: Small Device, Broad Impact in Power Electronics It's not every day that the engineers at GE Global Research get their hands on a material that's literally revolutionizing an... Read More » Invention Factory: How Will The World Get Smaller? In this episode of Invention Factory - a

  1. Finding Engineering Inspiration at GE | GE Global Research

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    Getting inspired at the intersection of innovation and creativity Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Getting inspired at the intersection of innovation and creativity Alice Pinney 2015.05.11 Interning at a place where innovation meets creativity has been a dream come true for me. Being an intern at GE

  2. GE's BBQ Science Experiments Produce Results |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BBQ Science Experiments Reveal Winning Rack of Ribs Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) BBQ Science Experiments Reveal Winning Rack of Ribs Lynn DeRose 2015.03.16 This is the fourth in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art

  3. New Developments | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    40 Things We Just Made Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) 140 Things We Just Made At GE Global Research, we're constantly building and making new things. Here are 140 of them. You Might Also Like IMG_0475 Innovation 24/7: We're Always Open » Munich_interior_V 10 Years ON: From the Lab to the Real World in

  4. Aviation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Aviation We're helping people soar faster, cleaner, higher and better, with futuristic propulsion systems that solve today's flight challenges. Home > Innovation > Aviation Synthetic Jets Help Keep Avionics Cool at Cruising Altitude When you think of airplanes, one of the first objects that comes to mind is the combustion engine that allows it to fly high in... Read More » 3D Printing Creates New Parts for Aircraft Engines In 2016, GE Aviation will introduce the first 3D-printed parts in

  5. Flex Schedule | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Working Outside the Box Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Flex Ability: Working Outside the Box GE employee Rebecca Boll shares her thoughts around flexibility in the workplace. Rebecca says that she's found that "People who work in a flexible manner, actually produce more for the company than people

  6. MEMS Relays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Next Revolution in MEMS Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Next Revolution in MEMS Microelectromechanical systems (MEMS) engineers share what GE Global Research is doing to revolutionize MEMS technology. You Might Also Like 2-1-8-v-mems-applications Engineer Chris Keimel Introduces MEMS Technology

  7. Laser Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Advanced Laser Manufacturing Tools Deliver Higher Performance Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Advanced Laser Manufacturing Tools Deliver Higher Performance In a research lab looking far, far into the future, a team of scientists and engineers from GE are developing next-generation

  8. Industrial Inspection Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Inspection Technologies at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Industrial Inspection Technologies at GE Global Research Waseem Faidi, manager of the Inspection and Metrology Lab at GE Global Research, describes developments in industrial inspection. You Might Also Like

  9. Breaking Ground for GE Oil & Gas Tech Center|GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Oklahoma City 125M global hub to accelerate innovation, expanding GE's R&D investment in oil and gas technology New agreement using GE's New Global Research Oil & Gas...

  10. GE Announces Vic Abate as New Chief Technology Officer | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and create next." Abate will become only the 10th leader in GE Global Research's 115-year history. As Chief Technology Officer, Abate will oversee GE's nine global research center...

  11. Collaborative Military Vehicle Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  12. 140627_GE-map-tech-eng

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy Management Electrical driver for LNG compression. Integrated Compressor Line Oil & ... LNG Max Reliability Oil & Gas A service that guarantees superior reliability on GE ...

  13. Zero Liquid Discharge Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Purifies Water GE's Reverse Osmosis (RO) Membrane technology addresses industrial waste water treatment and recycling needs, purifying water for cooling, boilers, and general...

  14. New Medical Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    boundaries. Home > Innovation > Healthcare GE Unveils High-Tech Superhero, GENIUS MAN Created on earth to inspire the next generation of scientists and engineers, a team of...

  15. 3D Printed Toy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scientists at GE Global Research get into the holiday spirit by bringing high-tech additive manufacturing techniques to Christmas tree ornaments. You Might Also Like...

  16. New Transportation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    transportation solutions. Home > Innovation > Transportation A World-Class Traction Motor for Hybrid and Electric Vehicles Engineers at GE Global Research are advancing motor...

  17. Electric Submersible Pump | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    are bringing a unique and broad set of technical capabilities and knowledge of GE's business portfolio to deliver needed technologies. Examples include: Abrasion and erosion...

  18. 12 GeV Upgrade | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Science A Schematic of the 12 GeV Upgrade The 12 GeV Upgrade will greatly expand the research capabilities of Jefferson Lab, adding a fourth experimental hall, upgrading existing halls and doubling the power of the lab's accelerator. A D D I T I O N A L L I N K S: 12 GeV Home Public Interest Scientific Opportunities Hall D Status Updates Contacts Three-Year Accelerator Schedule top-right bottom-left-corner bottom-right-corner 12 GeV Upgrade Physicists at Jefferson Lab are trying to find answers

  19. Ultrasound Open Innovation | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to help accelerate the development of new applications to improve the quality of care. Michael Idelchik, vice president of Advanced Technology Programs at GE Global...

  20. Work & Life at Shanghai | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technical Community This community creates a cross-business platform for GE China technologists to enhance technical depth, improve technical breadth and exchange...

  1. GE Global Research in Shanghai, China

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shanghai, China Shanghai, China GE's commercial and industrial history meets challenges posed by China's rapid growth to produce work reflecting the advancing world. Click to email...

  2. Disclosures, Disclaimers and Policies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to PHS-funded research Equal Employment Opportunity Plans Persons wishing to review GE Global Reasearch's EEOP should contact the GEGR Recruiting Manager: Megan Magee, GRC...

  3. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

  4. Xergy Ships First Breakthrough Water Heater Compressor to GE...

    Energy Savers [EERE]

    Xergy Ships First Breakthrough Water Heater Compressor to GE Xergy Ships First Breakthrough Water Heater Compressor to GE September 15, 2015 - 3:41pm Addthis Xergy Inc. and GE...

  5. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    who want to learn more about GE and its global Research Centers. For this purpose, the Aero & Thermal Systems groups of GE Global Research and representatives from several GE...

  6. Cedar Creek Wind Farm II (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Cedar Creek Wind Farm II (GE) Facility Cedar Creek II (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service...

  7. Top of the World (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Top of the World (GE) Facility Top of the World (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner...

  8. GE Showcases Industrial Internet Innovations and Promotes Win...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SHANGHAI, Oct. 21 -- The GE China Technology Center presented the newest industrial trends and innovative achievements in the "Minds and Machines"-themed 2015 GE TECHfest today. ...

  9. GE Hybrid Power Generation Systems | Open Energy Information

    Open Energy Info (EERE)

    Name: GE Hybrid Power Generation Systems Place: Georgia Zip: Atlanta Product: Focused on fuel cell stack and system development. References: GE Hybrid Power Generation Systems1...

  10. Durathon Battery Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Durathon(tm) Battery Helps Power Electric Bus Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Durathon(tm) Battery Helps Power Electric Bus GE engineer Tim Richter explains how the company's Durathon(tm) batteries fit into the on-board energy management system on a bus at GE's Global Research Center. This

  11. Hospital Sterile Processing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Researches Use of Robots for Hospital Sterile Processing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Researches Use of Robots for Hospital Sterile Processing GE principal investigator Lynn DeRose discusses the robotic automation system that GE Global Research is starting to build with the U.S. Veteran's

  12. About Additive Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Introducing Additive Manufacturing at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Introducing Additive Manufacturing at GE Global Research Prabhjot Singh, manager of the Additive Manufacturing Lab at GE Global Research, describes the technology used in his lab. You Might Also Like DirectWrite_V

  13. Making Industrial Parts Smarter | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building More Intelligent GE Products with Additive Manufacturing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Building More Intelligent GE Products with Additive Manufacturing James Y. Yang 2014.04.03 GE is using 3D printing and other additive technologies to design and produce parts never before possible. We're

  14. Researching NDE, Additive Manufacturing |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research in NDE and Additive Manufacturing Provides Life-Changing Experience for GE Intern Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  15. Natural Gas Locomotive | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Aside from the cost savings, there are the environmental benefits. With LNG, NOx and ... GE engineers are currently testing a fuel mixture that is 80% LNG, and 20% diesel using ...

  16. Remembering Zach Stum | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    execute as a Lead SiC Device Engineer. He took every opportunity available to expand his knowledge base, authoring approximately 16 scientific papers and 20 GE reports. He was a...

  17. membrane-ge | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bench-Scale High-Performance Thin Film Composite Hollow Fiber Membranes for Post-Combustion Carbon Dioxide Capture Project No.: DE-FE0007514 GE Global Research is developing high...

  18. Edison's Desk Blog | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2015.02.17 New RFID Sensors are Smaller, Use Less Power to Detect Chemical Threats Hello Earth We have reached a significant milestone with GE's radio-frequency...

  19. New Global Research Website | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the time to visit geglobalresearch.com. We hope you make it a regular destination to learn about how GE Global Research is working to improve the world by pushing the limits of...

  20. Waste to Energy Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Matt Nielsen talks about waste-to-energy technology at the 2012 Invention Convention's Capital District awards ceremony. You Might Also Like 2-2-7-v GE Scientists Unveil Greener,...

  1. Colon Cancer Mapping | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in...

  2. Ideas Are Scary | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for a Career in R&D IsraelTechCenterV Israel: A Source of Innovation for GE NanaVertical Open Innovation and the Middle Market EdisonSummit2-14V Tomorrow's...

  3. GE Appliances: Order (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  4. GE Global Research Europe in Munich, Germany

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Munich, Germany Munich, Germany With a hand in nearly all GE research fields, this center is a hub of commercial and industrial science and technology innovation. Click to email...

  5. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy We're building a powerful future that combines sustainable energy solutions, efficient turbines and a resilient electrical grid. Home > Innovation > Energy Flexible Fuel Solutions Offer Efficient, Reliable Energy The world of power generation is evolving at lightning speed. GE is focused on staying one step ahead of it. With a proven... Read More » GE Recognized as an Energy Frontier Research Center The Center for Electrocatalysis, Transport Phenomena, and Materials for Innovative

  6. Crowdsourcing Software Award | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Crowdsourcing Software Platform Wins Award Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Crowdsourcing Software Platform Wins Award GE Global Research, the technology development arm of the General Electric Company (NYSE: GE) today announced that it has won a prestigious Manufacturing Leadership 100 award in

  7. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy We're building a powerful future that combines sustainable energy solutions, efficient turbines and a resilient electrical grid. Home > Innovation > Energy Silicon Carbide Applications: Small Device, Broad Impact in Power Electronics It's not every day that the engineers at GE Global Research get their hands on a material that's literally revolutionizing an... Read More » Flying above the innovative ecoROTR wind turbine in a drone GE spent a week flying state-of-the-art drones over

  8. Advanced Lighting Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Appliances & Lighting We're developing cutting-edge appliances and innovative lighting to make life easier, reduce costs and increase energy efficiency. Home > Innovation > Appliances & Lighting A Quirky Idea: Turning Patents Into Consumer Products In April 2013, GE and Quirky announced a partnership that introduces a whole new way of inventing. We teamed up with Quirky, the... Read More » GE's Dual Piezoelectric Cooling Jets (DCJ) Are Cool and Quiet Ultrathin tablets and laptops

  9. GE Store for Technology is Open for Business | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The GE Store for Technology is Open for Business Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The GE Store for Technology is Open for Business Welcome to GE Global Research, also known as the GE Store for Technology. Across our global network of nine technology centers, we have more than 3,600 of the world's best

  10. GE partners with 'Girls Who Code' for summer program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to 1,200 girls in nine cities nationwide. GE joins other program partners including Accenture, Adobe, AIG, AT&T, Electronic Arts, Facebook, Google, Microsoft, Pixar Animation...

  11. Immelt: GE Stands at Intersection of Physical, Digital | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Immelt: GE stands at the intersection of the physical, digital Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Immelt: GE stands at the intersection of the physical, digital GE's 2015 Annual Meeting of Shareowners was held Wednesday, April 22, in Oklahoma City, the location of GE's newest Global Research facility.

  12. Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Vehicles GE Showcases Innovation in Alternative Fuel Vehicles to someone by E-mail Share Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on Facebook Tweet about Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on Twitter Bookmark Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on Google Bookmark Alternative Fuels Data Center: GE Showcases Innovation in Alternative Fuel Vehicles on

  13. Work and Life Balance | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Balancing Work with Life Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Flex Ability: Balancing Work with Life Achieving work/life balance is a much-talked-about topic. According to GE Healthcare's Kelly Piacsek, "GE hires people for what's inside their head-what they know-and the specific hours you spend at work

  14. Artificial Lift Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology: Driving the Artificial Lift Market Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Technology: Driving the Artificial Lift Market Gary Ford, president and CEO of GE Artificial Lift, discusses what the equipment does, the current state of the market and the importance of working with GE's Global Research

  15. Researching NDE, Additive Manufacturing |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research in NDE and Additive Manufacturing Provides Life-Changing Experience for GE Intern Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Research in NDE and Additive Manufacturing Provides Life-Changing Experience for GE Intern Sean Farrell 2015.08.18 As an undergraduate student, I never thought I would get the

  16. Genius Man Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Unveils High-Tech Superhero, GENIUS MAN Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Unveils High-Tech Superhero, GENIUS MAN Created on earth to inspire the next generation of scientists and engineers, a team of GE researchers have created a comic superhero that is the embodiment of innovative technology sprung

  17. Brazil Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Biofuels Research at GE's Brazil Technology Center Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Biofuels Research at GE's Brazil Technology Center Clayton Zabeu, leader of Brazil Technology Center's Biofuels Center of Excellence, talks about the main objectives of the research programs that will drive the development

  18. GE's Christine Furstoss Named to NACIE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    U.S. Secretary of Commerce Penny Pritzker Announces GE's Christine Furstoss to Serve on the National Advisory Council on Innovation and Entrepreneurship Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) U.S. Secretary of Commerce Penny Pritzker Announces GE's Christine Furstoss to Serve on the National Advisory Council on

  19. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sundeep Kumar Sundeep Kumar Senior Scientist Ceramics Synthesis & Processing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I leverage the experience and network I have built over the years working with some of the finest minds at GE to help me solve tough technical problems for GE." -Sundeep Kumar

  20. Kids at Work | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    "Young Scientists" Join Mom and Dad at Work Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's "Young Scientists" Join Mom and Dad at Work In 2013, GE Global Research employees brought more than 300 of their children, ranging in age from 8 to 16 years, to work for a day. The kids met Baxter (a

  1. Cool and Quiet DCJ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Dual Piezoelectric Cooling Jets (DCJ) Are Cool and Quiet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Dual Piezoelectric Cooling Jets (DCJ) Are Cool and Quiet Ultrathin tablets and laptops are the norm these days but researchers from GE have pioneered a technical breakthrough called DCJ that will enable even

  2. Ecoassessment Center of Excellence | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    How Green Is Green? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) How Green Is Green? GE's Global Research Center's Ecoassessment Center of Excellence was created to study the impact of GE products and services on the environment and human health. The center provides focused core technical expertise in the analysis of

  3. Licensing Our Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Teaming Up With Idea Works Puts Our Tech Into the World Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Teaming Up With Idea Works Puts Our Tech Into the World GE Idea Works is extending the reach of our technology by connecting GE's internal intellectual property, technology and resources with the external world. With

  4. Advanced Water Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Water We're developing ways to purify and conserve this vital resource. Take a look at our work. Home > Innovation > Water Innovation 24/7: We're Always Open At GE Global Research, we work around the clock and across the globe to build, power, move and cure the world. Click the image... Read More » Reverse Osmosis (RO) Membrane Technology Purifies Water GE's Reverse Osmosis (RO) Membrane technology addresses industrial waste water treatment and recycling needs, purifying water... Read

  5. Who Is Jim Bray, GE Stump the Scientist? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Who Is Jim Bray, GE Stump the Scientist? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Who Is Jim Bray, GE Stump the Scientist? 2012.05.30 Chief Scientist Jim Bray introduces himself and talks about his work and time at GE. 0 Comments Comment Name Email Submit Comment

  6. GE Announces Vic Abate as New Chief Technology Officer | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Names Vic Abate New Chief Technology Officer; Succeeds Mark Little Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Names Vic Abate New Chief Technology Officer; Succeeds Mark Little Vic Abate, President and CEO of GE's Power Generation business, to succeed Mark Little and continue GE's leadership in the Digital

  7. GE Scientists Source Best Ideas at hackMIT | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scientists Source Best Ideas at hackMIT Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Scientists Source Best Ideas at hackMIT Joseph Salvo 2013.10.03 At MIT they're serious about "hacking" together ideas for innovation, invention, and new businesses. This weekend a team from GE Global Research and GE

  8. GE launches 'STEM empowers OK' initiative in Oklahoma City | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" stem empowers ok GE Foundation donates $400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to

  9. A Global R&D Network Driving GE's Oil & Gas Technology Pipeline | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research A Global R&D Network Driving GE's Oil & Gas Technology Pipeline Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) A Global R&D Network Driving GE's Oil & Gas Technology Pipeline As we break ground on GE's newest Global Research Oil & Gas Technology Center, work is happening 24/7 at our

  10. Phase transitions in Ge-Sb phase change materials

    SciTech Connect (OSTI)

    Raoux, Simone; Virwani, Kumar; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-03-15

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T{sub x}) also show an increase with Ge concentration closely tracking the measured values of T{sub x}. For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity.

  11. GE Lighting Solutions: Order (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE ordered General Electric Lighting Solutions, LLC to pay a $5,360 civil penalty after finding GE Lighting Solutions had manufactured and distributed in commerce in the U.S. 30 units of basic model DR4-RTFB-23B and 177 units (of which 85 units remain in inventory) of basic model DR4-RTFB-77A-002, noncompliant traffic signal modules.

  12. VEA-0016- In the Matter of GE Appliances

    Broader source: Energy.gov [DOE]

    Sub-Zero Freezer Co. (Sub-Zero), GE Appliances (GE), and Whirlpool Corporation (Whirlpool) filed appeals of our November 3, 2000 decision, granting Viking Range Corporation (Viking) a six-month...

  13. TEE-0074- In the Matter of GE Appliances & Lighting

    Broader source: Energy.gov [DOE]

    This Decision and Order considers an Application for Exception filed by GE Appliances &Lighting (GE) seeking exception relief from the provision of 10 C.F.R. Part 430, EnergyConservation...

  14. What Happens in Research-Based Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    paths we have at GE Global Research ("GE Leaders are Researchers Too",). The field of gas turbine heat transfer is growing in importance, and as a result, we have a lot of job...

  15. Intern Shares Insight Into Researchers' Minds |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Opens in new window) The Quality of GE Researchers...and Why That's So Important Daniel Cadel 2014.08.14 GE Global Research asked some of our interns to share why they wanted...

  16. Science and BBQ: GE makes its mark, and bark, at SXSW | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Science and BBQ: GE makes its mark ... and bark Lynn DeRose 2015.03.20 This is the fifth in...

  17. PROJECT PROFILE: General Electric - GE Global Research | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy PROJECT PROFILE: General Electric - GE Global Research PROJECT PROFILE: General Electric - GE Global Research Funding Opportunity: CSP: APOLLO SunShot Subprogram: CSP Location: Niskayuna, NY Amount Awarded: $3,800,000 Awardee Cost Share: $1,841,054 GE Global Research Logo.png GE Global Research and Southwest Research Institute will develop an optimal compression system for a modular supercritical carbon dioxide (sCO2) power block operation in highly transient CSP tower applications.

  18. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore » dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  19. GEANT4 Simulation of Hadronic Interactions at 8-GeV/C to 10-GeV...

    Office of Scientific and Technical Information (OSTI)

    GEANT4 Simulation of Hadronic Interactions at 8-GeVC to 10-GeVC: Response to the HARP-CDP Group Citation Details In-Document Search Title: GEANT4 Simulation of Hadronic ...

  20. GE Appliances: Order (2012-SE-1403) | Department of Energy

    Office of Environmental Management (EM)

    Appliances: Order (2012-SE-1403) GE Appliances: Order (2012-SE-1403) October 3, 2012 DOE ordered GE Appliances, a Division of General Electric Company to pay a $63,000 civil penalty after finding GE had privately labeled and distributed in commerce in the U.S. the 4-cubic-foot capacity refrigerator basic model SMR04GAZCS, which includes models SMR04GAZACS and SMR04GAZBCS. The Order adopted a Compromise Agreement, which reflected settlement terms between DOE and GE. PDF icon GE Appliances: Order

  1. Nanoscale Material Properties | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanotechnology Drives New Levels of Performance Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Nanotechnology Drives New Levels of Performance GE scientists are discovering new material properties at the nanoscale that drive new performance levels in jet engines, gas and steam turbines, electronic devices and disease

  2. GE Global Research in Tirat Carmel, Israel

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Tirat Carmel, Israel Tirat Carmel, Israel The Israel Technology Center creates partnerships between Israeli external innovators and GE to bring innovative technologies to the world. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Israel Technology Center team is responsible for creating partnerships with external

  3. Impact of Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    IMPACT The needs of the world inspire us to create technologies to build, connect, cure, move and power the world around us. I Want to See Game-Changing Technology Work & Life Cool Science STEM Education Most Popular Shuffle Information for Me Game-Changing Technology Work & Life Cool Science STEM Education Most Popular Shuffle GE Predictivity(tm) Industrial Internet Solutions » Clean Room Challenge: Nanoscientist Quiz 2 » Intelligent Rail Networks Enable Smoother Rail Traffic »

  4. Innovative Ideas and Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    INNOVATION Our technology evolves from day to day, constantly drawing us forward. Find out what we're working on and what's on the horizon. I Want to See Game-Changing Technology Work & Life Cool Science STEM Education Most Popular Shuffle Information for Me Game-Changing Technology Work & Life Cool Science STEM Education Most Popular Shuffle Optimization and Reliability Protect the Power Grid » Invention Factory: How Will Robots Evolve? » GE Scientists Demonstrate Promising Anti-icing

  5. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inventors GE Global Research Centers are home to many of the world's brightest, most inquisitive minds in science and technology. Home > Invention > Inventors Sort: Random First Name Last Name Filter: All Aero-Thermal & Mechanical Systems Chemistry & Chemical Engineering Diagnostics, Imaging & Biomedical Technologies Electrical Technologies & Systems Manufacturing & Materials Technologies Software Sciences & Analytics Faisal Ahmad Physicist Micro & Nano

  6. Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge

    SciTech Connect (OSTI)

    Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

    2009-01-28

    The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

  7. Elimination of GeO(2) And Ge(3)N(4) Interfacial Transition Regions And Defects at N-Type Ge Interfaces: a Pathway for Formation of N-MOS Devices on Ge Substrates

    SciTech Connect (OSTI)

    Lucovsky, G.; Lee, S.; Long, J.P.; Seo, H.; Luning, J.

    2009-05-19

    The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant limitation on equivalent oxide thickness (EOT) scaling for Si complementary metal-oxide-semiconductor (CMOS) devices. This limitation is equally significant and limiting for Ge CMOS devices. Low-K Ge-based ITRs in Ge devices have also been shown to limit performance and reliability, particular for n-MOS field effect transistors. This article identifies the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs. This is shown to be an interfacial band alignment issue in which native Ge ITRs have conduction band offset energies smaller than those of TM dielectrics, and trap electrons for negative Ge substrate bias. This article also describes a novel remote plasma processing approach for effectively eliminating any significant native Ge ITRs and using a plasma-processing/annealing process sequence for bonding TM gate dielectrics directly to the Ge substrate surface.

  8. GE's Arnie Lund Discusses User Experience at an Industrial Scale | GE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research Arnie Lund Discusses User Experience at an Industrial Scale Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Arnie Lund Discusses User Experience at an Industrial Scale Arnie Lund, manager of the UX Industrial Innovation Lab at GE Global Research in San Ramon, Calif, recently spoke to the

  9. GE and Maker Faire Are a Match Made in Nerd Heaven | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Maker Faire Are a Match Made in Nerd Heaven Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE and Maker Faire Are a Match Made in Nerd Heaven Peter Tu 2011.06.06 This year GE was a sponsor of the spring version of Maker Faire held out in San Francisco. Our main contributions to the festivities consisted of a

  10. GE funds initiative to support STEM initiatives in Oklahoma | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research STEM Empowers OK: Initiative to enrich STEM education in Oklahoma Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) STEM Empowers OK: Initiative to enrich STEM education in Oklahoma On April 21, 2015, GE announced a grant to the state of Oklahoma to enhance STEM education initiatives. Jeff Immelt, GE's

  11. Construction progresses at GE's Oil & Gas Technology Center | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Home > Impact > Construction progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Construction progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Construction is

  12. Recovery Act Helps GE in-source Manufacturing | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing September 30, 2010 - 2:21pm Addthis The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE Lindsay Gsell GE has a long history in Louisville, Ky. The company's appliance and lighting facility in Louisville has been manufacturing appliances

  13. Recovery Act Helps GE in-source Manufacturing | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing September 30, 2010 - 2:21pm Addthis The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE Lindsay Gsell GE has a long history in Louisville, Ky. The company's appliance and lighting facility in Louisville has been manufacturing appliances

  14. Thermal Imaging Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advanced Thermal Imaging Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Butterfly-Inspired Design Enables Advanced Thermal Imaging Bryan Whalen in the Electronics Cooling Lab at GE Global Research recorded this thermo graphic video of a Morpho butterfly structure in response to heat pulses produced by breathing onto

  15. Brilliant Wind Turbine | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Brilliant(tm) Wind Turbines Push Power and Efficient Boundaries Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Brilliant(tm) Wind Turbines Push Power and Efficient Boundaries The conventional wisdom around wind is that the technology runway for improvement is short. GE believes just the opposite. We see a long runway

  16. Rodrigo Rodriguez Erdmenger | Inventors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rodrigo Rodriguez Erdmenger Rodrigo Rodriguez Erdmenger Research Engineer Turbomachinery Aero Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "What fuels my passion for work is knowing that I can impact the technology of GE products and lives of people all over the world." -Rodrigo Rodriguez Erdmenger Ask

  17. Diagnostics on Demand | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The "Diagnostics on Demand" Infectious Disease Test Kit Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The "Diagnostics on Demand" Infectious Disease Test Kit GE's lead researcher, David Moore, shows how this paper-based instrument, the size of a deck of playing cards, enables field-based testing

  18. GE Global Research in Bangalore, India

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bangalore, India Bangalore, India The first GE Research & Development Center outside the U.S. applies cutting-edge technologies to solve challenges across the first and developing worlds. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Visit the Careers page to search and apply for Global Research jobs in Bangalore.

  19. GE Global Research in Oklahoma City

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Oklahoma City, USA Oklahoma City, USA GE's first sector-specific global research center is dedicated to developing and accelerating innovative oil and gas technologies. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Visit the Careers page to search and apply for Global Research jobs in Oklahoma City. We also welcome

  20. Blue Arc Machining | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Superfast Machining for Superalloy Metals with Blue Arc(tm) Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Superfast Machining for Superalloy Metals with Blue Arc(tm) In the race to make higher-quality metal parts faster and more efficiently, scientists and engineers at GE Global Research have developed Blue Arc(tm), a

  1. Access to Clean Water | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Clean Water Innovations Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) What Works: Mark Little on Clean Water Innovations Mark Little, director of GE Global Research, answers the question: "What commodities can be used in new ways to allow more humans to have access to clean water?" You Might Also Like

  2. Advanced Propulsion Systems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CFM LEAP Aircraft Engines Are Fuel- and Cost-Efficient Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) CFM LEAP Aircraft Engines Are Fuel- and Cost-Efficient The new LEAP engine, developed by CFM, has literally taken leaps in engine innovation in both fuel and cost efficiency. Scheduled to enter service in 2016, GE in

  3. Air Traffic Operations | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    In the Air Traffic Cloud Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) In the Air Traffic Cloud Researchers Mike Durling and Liling Ren discuss new technology to make air traffic more efficient. You Might Also Like IMG_0475 Innovation 24/7: We're Always Open » primus_engine_featuredimage3 GE Innovation and

  4. Intelligent Rail Networks | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Intelligent Rail Networks Enable Smoother Rail Traffic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Intelligent Rail Networks Enable Smoother Rail Traffic A delayed train is more than just an inconvenience; it can disrupt the flow of goods and commerce itself. GE Global Research technologists are using advanced data

  5. Internal Combustion Efficiency | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reducing Emissions in the New Tier 4 Locomotive Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Reducing Emissions in the New Tier 4 Locomotive GE Global Research Internal Combustion lab manager Omowoleola "Wole" Akinyemi talks about efforts to reduce emissions in new Tier 4 locomotives. You Might Also Like

  6. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amol Kolwalkar Amol Kolwalkar Senior Engineer Control & Optimization Systems Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "What motivates me is the thrill and anticipation of finding something that was not previously identified." -Amol Kolwalkar Amol Kolwalkar epitomizes the GE Belief "deliver

  7. Jim Bray Interview | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Behind the Scenes with Chief Scientist Jim Bray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Behind the Scenes with Chief Scientist Jim Bray 2013.04.25 Chief Scientist Jim Bray talks about technology milestones, his career and his life at and away from GE. 0 Comments Comment Name Email Submit Comment You Might Also

  8. Masako Yamada | Inventors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Masako Yamada Masako Yamada Manager Advanced Computing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I believe individuals should be given the chance to reinvent themselves. Recently, I've reinvented myself as a supercomputing person-again." -Masako Yamada Masako began her career at GE in applied optics,

  9. Metal MEMS Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MEMS: Inside the Global Research Cleanroom Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) MEMS: Inside the Global Research Cleanroom This follow-up to our introduction to MEMS takes you inside the GE Global Research cleanroom to see more about how MEMS are made. You Might Also Like 2-1-8-v-mems-applications Engineer

  10. Working in the Cleanroom | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Innovation > The Dirt on the Cleanroom Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Dirt on the Cleanroom In this short video, take a look inside the GE Global Research cleanroom and meet the team working in this 28,000-square-foot space filled with more than 200 pieces of semiconductor processing

  11. Stump the Scientist | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stump the Scientist Curiosity is the inventor's greatest tool. Ask us your question about science or technology and see what our scientists say! Home > Invention > Stump the Scientist Behind the Scenes with Chief Scientist Jim Bray Watch the Video » Happy Pi Day from GE Global Research Watch the Video » Ready to Stump the Scientist? Try your hand at leaving our researchers speechless. Submit Question » Can Computer Processors Beat the Human Mind in the Future? Watch the Video » Why

  12. Making Silicon Carbide Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Making Silicon Carbide Devices in the Cleanroom Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research cleanroom, I wanted to take some time to give you the dirt on our clean room over the

  13. MU(& Ge-+v,

    Office of Legacy Management (LM)

    fil MU(& Ge-+v, . !d R&arch & Development b This document consists of 6 Contract Ho. pages and - . --------------_____---. figures No.--~--of.--~~-_-copies, Series,&,, This subcontract entered into this 20 day 0fSepte~ber , 1943, by and between the University of Cliicago, a corporation not for pecuniary profit organized under the ICVS of the Stnto of Illinois, of Chicago, Illinois (hereinafter called "the Contractor") and Yiolverine Tube Divisionof Caluzet 2 Eecla

  14. 3D Printing Medical Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Additive Manufacturing Demonstration at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Additive Manufacturing Demonstration at GE Global Research See how GE Global Research is developing additive manufacturing processes for ultrasound transducers and reducing hours from the transducer manufacturing

  15. COLLOQUIUM: Future Electrical Technologies From a GE Viewpoint | Princeton

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Plasma Physics Lab March 11, 2015, 4:00pm to 5:30pm Colloquia MBG Auditorium COLLOQUIUM: Future Electrical Technologies From a GE Viewpoint Dr. James Bray GE Global Research I will give a brief overview of the technologies being pursued within GE, the largest conglomerate. I will then focus more on the electrical technologies for a more detailed description. These will include new devices such as SiC MOSFETs, electrical systems, controls, electrical machines, superconducting equipment,

  16. Commissioning and Operation of 12 GeV CEBAF

    SciTech Connect (OSTI)

    Freyberger, Arne P.

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) located at the Thomas Jefferson National Accelerator Laboratory (JLab) has been recently upgraded to deliver continuous electron beams to the experimental users at a maximum energy of 12 GeV, three times the original design energy of 4 GeV. This paper will present an overview of the upgrade, referred to as the 12GeV upgrade, and highlights from recent beam commissioning results.

  17. Steve Duclos, Chief Scientist, GE Global Research, Research Priorities for

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Efficient Use of Critical Materials from a U.S. Corporate Perspective | Department of Energy Steve Duclos, Chief Scientist, GE Global Research, Research Priorities for More Efficient Use of Critical Materials from a U.S. Corporate Perspective Steve Duclos, Chief Scientist, GE Global Research, Research Priorities for More Efficient Use of Critical Materials from a U.S. Corporate Perspective PDF icon Session_C3_Duclos_-_GE.pdf More Documents & Publications Trans-Atlantic Workshop on

  18. Testimonials - Partnerships in Fuel Cells - GE Global Research |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis Text Version The words "Office of Energy Efficiency & Renewable Energy, U.S. Department of Energy, EERE Partnership Testimonials," appear on the screen, followed by "Mark Little, Senior Vice President, GE Global Research" and footage of a man in a suit. Mark Little: Energy, manufacturing, innovation, and competitiveness are the core to the

  19. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect (OSTI)

    Steglich, Martin; Schrempel, Frank; Fchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Hche, Thomas; Tnnermann, Andreas; Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380C. Typical Stransky-Krastanov growth is observed at 410C. At lower temperatures (320C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  20. Silicon Carbide in the Cleanroom | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inside the GE Global Research Clean Room: Silicon Carbide Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Inside the GE Global Research Clean Room: Silicon Carbide GE Global Research is working on nanoscale silicon carbide devices. Find out what we're doing. You Might Also Like 2-1-10-v-working-at-ge-research The Dirt

  1. Secretary Chu Speaks at GE Solar Facility | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GE Solar Facility Secretary Chu Speaks at GE Solar Facility November 18, 2011 - 1:19pm Addthis Secretary Steven Chu's remarks, as prepared for delivery, at the General Electric Solar Facility in Arvada, Colorado. Thank you, Fred [Seymour], for the introduction. GE is a leader in energy innovation. Thomas Edison, the father of GE, once said, "I'd put my money on the sun and solar energy. What a source of power!" I imagine he would be amazed by the solar technology that is tested here.

  2. Construction progresses at GE's Oil & Gas Technology Center ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Construction progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window)...

  3. 3D Printing Aircraft Parts | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in GE aircraft engines signals a paradigm shift that is happening with the emergence of additive manufacturing. Additive not only offers the opportunity to design parts never...

  4. The Wizard of Schenectady: Charles Proteus Steinmetz | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    week the Smithsonian's "Past Imperfect" blog highlighted a man near and dear to the heart of GE Global Research, Charles Proteus Steinmetz. The article paints a really...

  5. EEDP and Other Leadership Programs | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    capability. New strengths, skills and cultural change are needed across GE, including multilevel leadership, technical and commercial capabilities, signaling a complete...

  6. GE Software Expert Julian Keith Loren Discusses Innovation and the

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Internet | GE Global Research GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet Julian Keith Loren, a senior product manager at GE

  7. Big Data and Analytics at Work | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    time analytics is required At GE we keep pace with these trends via the Industrial Internet, a highly connected ecosystem of intelligent machines, advanced analytics and people...

  8. GE to provide data, analytics to Brazilian Canoe Confederation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovative partnership will pair GE software scientists with athletes to explore how big data can help them optimize their performance for the Rio 2016 Olympic and Paralympic...

  9. Data Science Makes Trains More Efficient | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Applications: Small Device, Broad Impact in Power Electronics barbecue BBQ - Is it Science or Art? direct write2square The GE Store for Technology is Open for Business...

  10. General Electric in India GE | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Name: General Electric in India (GE) Place: New Delhi, Delhi (NCT), India Zip: 110015 Sector: Services, Wind energy Product: String representation...

  11. Engineers Named to National Academy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 GE Engineers Elected to National Academy of Engineering Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) 3 GE Engineers Elected to National Academy of Engineering GE (NYSE: GE) announced today that three distinguished engineers, one from the company's Global Research Center, and two from its Aviation business, have

  12. A Sneak Peek Into Santa's Smarter Sleigh | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    legs a break. - An upgraded sleigh frame made from GE's high temperature Ceramic Matrix Composites (CMCs). The CMCs can withstand the heat of entry and reentry in earth's...

  13. Innovate in China, Innovate for China | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    overall technological strength of Shanghai and even China. The GE-SJTU Collaborative Research Laboratory, the National Engineering Practice Education Center at Tongji University,...

  14. Supercomputing with Livermore National Lab | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    other GE products, including the fuel injectors used in locomotives and land-based gas turbines. The methodology can potentially be applied to study nebulizers for aerosol...

  15. Thoughts From the 2012 Whitney Software Symposium | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Big Data, Modeling and Simulation, High Performance Computing and the Industrial Internet as key technological enablers of GE's Software initiatives. We enjoyed speakers from...

  16. EEDP and Other Leadership Programs | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ready to dive in? Apply for the program. GE Software Leadership Program The rise of the Industrial Internet requires a new breed of talent and organizational capability. New...

  17. EXPLANATION OF SIGNIFICANT DIFFERENCES

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    EXPLANATION OF SIGNIFICANT DIFFERENCE FOR THE 100-NR-1 OPERABLE UNIT TREATMENT, STORAGE, AND DISPOSAL INTERIM ACTION RECORD OF DECISION AND 100-NR-1/100-NR-2 OPERABLE UNIT INTERIM ACTION RECORD OF DECISION January 2003 SITE NAME AND LOCATION U.S. Department of Energy 100 Areas 100-NR-1 and 100-NR-2 Operable Units, Hanford Site Benton County, Washington INTRODUCTION TO THE SITE AND STATEMENT OF PURPOSE The Washington State Department of Ecology (Ecology), U.S. Environmental Protection Agency

  18. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    SciTech Connect (OSTI)

    Knowlton, W.B. |

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  19. GEANT4 Simulation of Hadronic Interactions at 8-GeV/C to 10-GeV/C: Response

    Office of Scientific and Technical Information (OSTI)

    to the HARP-CDP Group (Journal Article) | SciTech Connect GEANT4 Simulation of Hadronic Interactions at 8-GeV/C to 10-GeV/C: Response to the HARP-CDP Group Citation Details In-Document Search Title: GEANT4 Simulation of Hadronic Interactions at 8-GeV/C to 10-GeV/C: Response to the HARP-CDP Group The results of the HARP-CDP group on the comparison of GEANT4 Monte Carlo predictions versus experimental data are discussed. It is shown that the problems observed by the group are caused by an

  20. 3 GeV Injector Design Handbook

    SciTech Connect (OSTI)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  1. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    SciTech Connect (OSTI)

    Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

    2014-10-06

    Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450?C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

  2. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    SciTech Connect (OSTI)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs.

  3. Ion beam synthesis of SiGe alloy layers

    SciTech Connect (OSTI)

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2{times}10{sup 16}cm{sup {minus}2}, 3{times}10{sup 16}cm{sup {minus}2} (mid), and 5{times}10{sup 16}cm{sup {minus}2} (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3{times}l0{sup 16}cm{sup {minus}2}cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  4. GE Showcases Industrial Internet Innovations and Promotes Win-Win

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cooperation at 2015 TECHfest | GE Global Research Showcases Industrial Internet Innovations and Promotes Win-Win Cooperation at 2015 TECHfest Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Showcases Industrial Internet Innovations and Promotes Win-Win Cooperation at 2015 TECHfest GE China Technology Center teams

  5. Breaking Ground for GE Oil & Gas Tech Center|GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas Technology Center in Oklahoma City $125M global hub to

  6. GE Awarded DOE Funding to Pilot Carbon Capture Technology | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Same class of ingredients found in hair conditioners and fabric softeners could hold key to washing out CO2 from Power

  7. GE Develops High Water Recovery Technology in China | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Develops High Water Recovery Technology in China Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Develops High Water Recovery Technology in China Technology aims to boost development of China's household water purification industry SHANGHAI, September. 17, 2015 - A team of scientists led by the Coating and Membrane

  8. GE partners with 'Girls Who Code' for summer program | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Partners with 'Girls Who Code' for Summer Immersion Program to Help Close the Gender Gap in Tech Sector Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Partners with 'Girls Who Code' for Summer Immersion Program to Help Close the Gender Gap in Tech Sector Aimed at equipping girls with skills to explore Science, Tech,

  9. GE Opens New Global R&D Center in Brazil - GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Opens New Global R&D Center in Brazil; Working with Petrobras and BG Group to develop advanced technologies for oil and gas processing on the seabed Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Opens New Global R&D Center in Brazil; Working with Petrobras and BG Group to develop advanced technologies for

  10. GE Progress Includes 140 Things We Made Yesterday | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Progress Includes 140 Things We Made Yesterday Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Progress Includes 140 Things We Made Yesterday Kristen Brosnan 2011.12.12 Hi everybody, I wanted to share a link today to a video that was pulled together at a remarkable pace and was launched last week. To go along with

  11. GE partners with Matthew Dear to create "Drop Science" | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Partners with Matthew Dear to Create "Drop Science" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Partners with Matthew Dear to Create "Drop Science" Every machine has its own acoustic signature - a precise frequency that indicates whether that machine is operating at peak

  12. GE, NASA Work to Relaunch Supersonic Air Travel | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Awarded 2- year $599,000 program to reduce engine noise during takeoffs and landings NISKAYUNA, NY - JUNE 10, 2015 - Scientists

  13. Pattern Recognition and Image Analysis in Materials | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in new window) Pattern Recognition and Image Analysis in Materials Jim Grande 2012.09.25 Hi I'm Jim Grande and I've been working at GE Global Research in Niskayuna for over 33...

  14. GE Progetti 3i Spa | Open Energy Information

    Open Energy Info (EERE)

    Progetti 3i Spa Jump to: navigation, search Name: GE Progetti & 3i Spa Place: Narni, Italy Sector: Renewable Energy Product: Italy-based engineering firm that is involved with the...

  15. The role of surface passivation in controlling Ge nanowire faceting

    SciTech Connect (OSTI)

    Gamalski, A. D.; Tersoff, J.; Kodambaka, S.; Zakharov, D. N.; Ross, F. M.; Stach, E. A.

    2015-11-05

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.

  16. GE, Clean Energy Fuels Partner to Expand Natural Gas Highway...

    Open Energy Info (EERE)

    GE, Clean Energy Fuels Partner to Expand Natural Gas Highway Home > Groups > Clean and Renewable Energy Jessi3bl's picture Submitted by Jessi3bl(15) Member 16 December, 2012 -...

  17. Extended Battery Life in Electric Vehicles | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, Ford, University of Michigan Extend Battery Life for EVs Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in...

  18. Electronic and magnetic properties of Si substituted Fe3Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shanavas, Kavungal Veedu; McGuire, Michael A.; Parker, David S.

    2015-09-23

    Using first principles calculations we studied the effect of Si substitution in the hexagonal Fe3Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. We find that substituting Ge with the smaller Si ions also reduces the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications. Thus our experimental measurements on samples of Fe3Ge1–xSix confirmmore » these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial.« less

  19. GE launches 'STEM empowers OK' initiative in Oklahoma City |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new...

  20. The role of surface passivation in controlling Ge nanowire faceting

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gamalski, A. D.; Tersoff, J.; Kodambaka, S.; Zakharov, D. N.; Ross, F. M.; Stach, E. A.

    2015-11-05

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of themore » precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.« less

  1. Scientists Develop Sensors Based on Butterfly Wings | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Bio-inspired Design from GE reported in Nature Communications Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share...

  2. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; Kalinin, Sergei V; Lai, Keji; Demkov, Alexander A.

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  3. Governor Cuomo, GE Announce Power Electronics Manufacturing Consortium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Governor Cuomo Announces 100 Businesses Led by GE to Join 500 Million Partnership with ... Click to share on Tumblr (Opens in new window) Governor Cuomo Announces 100 Businesses Led ...

  4. Notrees 1B (GE Energy) Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    W 60,000,000,000 mW 0.06 GW Number of Units 40 Commercial Online Date 2009 Wind Turbine Manufacturer GE Energy References Wind Energy Market Intelligence1 Loading map......

  5. Global Research on On The Verge | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    this video on www.youtube.com, or enable JavaScript if it is disabled in your browser. Paul Miller from On the Verge takes a tour of GE's Global Research Center to see new...

  6. Bringing a Digital Mindset to Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    a theme here? This week, GE joined the UI LABS-led Digital Manufacturing Design and Innovation Institute (DMDII) in announcing the creation of an open-source platform that will...

  7. Stump the Scientist | Page 2 of 3 | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the Video Who Is Jim Bray, GE Stump the Scientist? Watch the Video What Is the Relationship of Electricity and the Human Body? Watch the Video How Close Are We to...

  8. Pushing Super Materials to the Limit | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    high-performance superalloys for numerous GE industrial products. As you'll see in the videos below, we put our materials through some of the most demanding tests to ensure they...

  9. Technology makes reds "pop" in LED displays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reveal and Energy Smart consumer brands, and Evolve(tm), GTx(tm), Immersion(tm), Infusion(tm), Lumination(tm), Albeo(tm) and Tetra commercial brands, all trademarks of GE....

  10. Arc Vault Significantly Reduces Electrical Hazards | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Arc Vault Significantly Reduces Electrical Hazards Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Arc Vault Significantly Reduces Electrical Hazards GE Global Research 2012.05.01 Recently, technology developed at GE Global Research received high praise from industry leaders for its ability to shield industrial -

  11. ARM - VAP Product - mmcrmode3ge200309091cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Productsmmcrmodemmcrmode3ge200309091cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027343 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200309091CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments Active Dates 2003.09.27 - 2004.08.10

  12. ARM - VAP Product - mmcrmode3ge200804181cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Productsmmcrmodemmcrmode3ge200804181cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027350 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200804181CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments, 20080418 version Active Dates 2008.04.18 - 2011.01.04

  13. Advanced Technology & Discovery at Niskayuna | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology & Discovery at Niskayuna Technology & Discovery at Niskayuna Capture the momentum behind leading-edge technologies from advanced manufacturing to supercomputing at GE's research headquarters. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Featured Technologies Controls Controls at GE are used in

  14. Scanning Photocurrent Microscopy of Si and Ge nanowires (Conference) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Conference: Scanning Photocurrent Microscopy of Si and Ge nanowires Citation Details In-Document Search Title: Scanning Photocurrent Microscopy of Si and Ge nanowires × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in energy science and technology. A paper copy

  15. Properties of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters

    SciTech Connect (OSTI)

    Dong, Yi; Rehman, Habib ur; Springborg, Michael

    2015-01-22

    The structures of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters with up to 44 atoms have been determined theoretically using an unbiased structure-optimization method in combination with a parametrized, density-functional description of the total energy for a given structure. By analyzing the total energy in detail, particularly stable clusters are identified. Moreover, general trends in the structures are identified with the help of specifically constructed descriptors.

  16. Reducing 68Ge Background in Dark Matter Experiments

    SciTech Connect (OSTI)

    Kouzes, Richard T.; Orrell, John L.

    2011-03-01

    Experimental searches for dark matter include experiments with sub-0.5 keV-energy threshold high purity germanium detectors. Experimental efforts, in partnership with the CoGeNT Collaboration operating at the Soudan Underground Laboratory, are focusing on energy threshold reduction via noise abatement, reduction of backgrounds from cosmic ray generated isotopes, and ubiquitous environmental radioactive sources. The most significant cosmic ray produced radionuclide is 68Ge. This paper evaluates reducing this background by freshly mining and processing germanium ore. The most probable outcome is a reduction of the background by a factor of two, and at most a factor of four. A very cost effective alternative is to obtain processed Ge as soon as possible and store it underground for 18 months.

  17. CEBAF SRF Performance during Initial 12 GeV Commissioning

    SciTech Connect (OSTI)

    Bachimanchi, Ramakrishna; Allison, Trent; Daly, Edward; Drury, Michael; Hovater, J; Lahti, George; Mounts, Clyde; Nelson, Richard; Plawski, Tomasz

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) energy upgrade from 6 GeV to 12 GeV includes the installation of eleven new 100 MV cryomodules (88 cavities). The superconducting RF cavities are designed to operate CW at an accelerating gradient of 19.3 MV/m with a QL of 3×107. Not all the cavities were operated at the minimum gradient of 19.3 MV/m with the beam. Though the initial 12 GeV milestones were achieved during the initial commissioning of CEBAF, there are still some issues to be addressed for long term reliable operation of these modules. This paper reports the operational experiences during the initial commissioning and the path forward to improve the performance of C100 (100 MV) modules.

  18. RHIC 100 GeV Polarized Proton Luminosity

    SciTech Connect (OSTI)

    Zhang, S. Y.

    2014-01-17

    A big problem in RHIC 100 GeV proton run 2009 was the significantly lower luminosity lifetime than all previous runs. It is shown in this note that the beam intensity decay in run 2009 is caused by the RF voltage ramping in store. It is also shown that the beam decay is not clearly related to the beam momentum spread, therefore, not directly due to the 0.7m. β* Furthermore, the most important factor regarding the low luminosity lifetime is the faster transverse emittance growth in store, which is also much worse than the previous runs, and is also related to the RF ramping. In 100 GeV proton run 2012a, the RF ramping was abandoned, but the β* was increased to 0.85m, with more than 20% loss of luminosity, which is not necessary. It is strongly suggested to use smaller β* in 100 GeV polarized proton run 2015/2016

  19. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Labs Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  20. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  1. Nanotextured Anti-Icing Surfaces | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Demonstrate Promising Anti-icing Nano Surfaces Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In addition to dramatically reducing ice adhesion, these surfaces

  2. National Academy of Engineering Election | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Elected to National Academy of Engineering Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Scientists Elected to National Academy of Engineering Dr. Peter Andresen, one of three GE scientists recently elected to the prestigious National Academy of Engineering, discusses his work detecting and predicting the very slow

  3. Itinerant magnetism in metallic CuFe2Ge2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shanavas, K. V.; Singh, David J.; He, Ruihua

    2015-03-25

    Theoretical calculations are performed to understand the electronic structure and magnetic properties of CuFe2Ge2. The band structure reveals large electron density N(EF) at the Fermi level suggesting a strong itinerant character of magnetism. The Fermi surface is dominated by two dimensional sheet like structures, with potentially strong nesting between them. The magnetic ground state appears to be ferromagnetic along a and antiferromagnetic in other directions. The results show that CuFe2Ge2 is an antiferromagnetic metal, with similarities to the Fe-based superconductors; such as magnetism with substantial itinerant character and coupling between magnetic order and electrons at the Fermi energy.

  4. Scientists Develop Sensors Based on Butterfly Wings | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Bio-inspired Design from GE reported in Nature Communications Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) New Bio-inspired Design from GE reported in Nature Communications Nanostructures fabricated following a design of natural Morpho butterfly wings demonstrate highly selective response to gases in a variable

  5. Governor Cuomo, GE Announce Power Electronics Manufacturing Consortium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Governor Cuomo Announces 100 Businesses Led by GE to Join $500 Million Partnership with State to Develop Next-Generation Power Electronics, Creating Thousands of Jobs in Capital Region and Upstate Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Governor Cuomo Announces 100 Businesses Led by GE to Join $500 Million

  6. Durathon Battery in New Bus | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Battery-Dominant Fuel Cell Bus Uses New Durathon(tm) Battery Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Battery-Dominant Fuel Cell Bus Uses New Durathon(tm) Battery Researchers at GE Global Research, the General Electric Company's (NYSE: GE) technology development arm, have achieved a first step in reducing the

  7. Electric Vehicle Technology and Batteries | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Recipe for Powering Next-Generation Electric Vehicles Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) A Recipe for Powering Next-Generation Electric Vehicles GE and Lawrence Berkeley National Laboratory (Berkeley Lab) are exploring a possible key to energy storage for electric vehicles. The GE/Berkeley team is

  8. Flexible Work Arrangements Go Outside the Box | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Flexible Work Arrangements Go Outside the Box Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Flexible Work Arrangements Go Outside the Box GE Global Research 2013.02.27 Hi, I am Rebecca Boll, Operations Manager for External Affairs and Technology at GE Global Research. The most important thing about me is that I have 3

  9. Cloud-Based Air Traffic Management Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Works to Bring Air Traffic Management Into "The Cloud" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Works to Bring Air Traffic Management Into "The Cloud" A global leader in avionics and software development, the General Electric Company (NYSE: GE) has embarked on an 18-month project with the

  10. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Low-Cost Thermal Imaging Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Butterfly-Inspired Design Enables Low-Cost Thermal Imaging Taking heat detection to a new level of sensitivity and speed, a team of scientists at GE Global Research, the technology development arm for the General Electric Company (NYSE: GE),

  11. Miniaturized Turbine Offers Desalination Solution | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Puts Desalination "on Ice" to Produce Clean Water at Low Cost Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Puts Desalination "on Ice" to Produce Clean Water at Low Cost Awarded US Department of Energy program to test breakthrough concept in water desalination Designing innovative process to

  12. High Performance Computing for Manufacturing Parternship | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency NISKAYUNA, NY, February 17,

  13. Field-induced quantum criticality in YbAgGe

    SciTech Connect (OSTI)

    Bud'ko, S.; Canfield, P.

    2008-01-01

    YbAgGe is one of the very few stoichiometric, Yb-based, heavy fermion materials that exhibit field-induced quantum criticality. We will present an overview of thermodynamic and transport measurements in YbAgGe single crystals. Moderate magnetic field (45-90 kOe, depending on orientation) suppresses long range magnetic order, giving rise to non-Fermi-liquid behavior followed at higher field by a crossover to a heavy Fermi-liquid. Given the more accessible temperature and field scales, a non-Fermi liquid region rather than point for T {yields} 0 K may be detected.

  14. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J.; Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menndez, J.; Aoki, Toshihiro

    2014-10-07

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamondcubic lattice.

  15. Demand Response Performance of GE Hybrid Heat Pump Water Heater

    SciTech Connect (OSTI)

    Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.

    2013-07-01

    This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation “Brillion”-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in “Standard” electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in “Heat Pump” mode to provide the comparison to heat pump-only demand response. It is expected that “Hybrid” DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.

  16. 7-GeV Advanced Photon Source Conceptual Design Report

    SciTech Connect (OSTI)

    Not Available

    1987-04-01

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

  17. The JLAB 12 GeV Energy Upgrade of CEBAF

    SciTech Connect (OSTI)

    Harwood, Leigh H.

    2013-12-01

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, procurement, installation and commissioning of the magnet and SRF components of the upgrade.

  18. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; et al

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

  19. Xianggelila Xian Ge Ji Liu Yu Xia Zhi En Hydroelectric Development...

    Open Energy Info (EERE)

    Ge Ji Liu Yu Xia Zhi En Hydroelectric Development Ltd Jump to: navigation, search Name: Xianggelila Xian Ge Ji Liu Yu Xia Zhi En Hydroelectric Development Ltd Place: Xianggelila...

  20. Beam On Target! - CEBAF Accelerator Achieves 12 GeV Commissioning...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in an experimental hall, recording the first data of the 12 GeV era. The machine sent electrons around the racetrack three times (known as "3-pass" beam), resulting in 6.11 GeV...

  1. GE to DOE General Counsel; Re:Request for Comment on Large Capacity...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers GE urges the...

  2. Illuminating the 130 GeV Gamma Line with Continuum Photons (Journal...

    Office of Scientific and Technical Information (OSTI)

    Illuminating the 130 GeV Gamma Line with Continuum Photons Citation Details In-Document Search Title: Illuminating the 130 GeV Gamma Line with Continuum Photons Authors: Cohen,...

  3. Xiang Ge Li La Xian Mai Di He Hydro Power Development Co Ltd...

    Open Energy Info (EERE)

    Xiang Ge Li La Xian Mai Di He Hydro Power Development Co Ltd Jump to: navigation, search Name: Xiang Ge Li La Xian Mai Di He Hydro Power Development Co., Ltd. Place: Yunnan...

  4. Discovery of GeV Emission tfrom the Circinus Galaxy with the...

    Office of Scientific and Technical Information (OSTI)

    Discovery of GeV Emission tfrom the Circinus Galaxy with the Fermi-Lat Citation Details In-Document Search Title: Discovery of GeV Emission tfrom the Circinus Galaxy with the...

  5. A new physics era at 12 GeV | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A new physics era at 12 GeV January 29, 2015 In several articles over the past years, we ... These are the harbingers of a new era, that of 12 GeV operations and physics. We have been ...

  6. High spin polarization in CoFeMnGe equiatomic quaternary Heusler...

    Office of Scientific and Technical Information (OSTI)

    Title: High spin polarization in CoFeMnGe equiatomic quaternary Heusler alloy We report the structure, magnetic property, and spin polarization of CoFeMnGe equiatomic...

  7. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  8. EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

  9. Exclusive electroproduction of strange mesons with JLab 12 GeV...

    Office of Scientific and Technical Information (OSTI)

    Exclusive electroproduction of strange mesons with JLab 12 GeV Citation Details In-Document Search Title: Exclusive electroproduction of strange mesons with JLab 12 GeV You are...

  10. Why is GeV physics relevant in the age of the LHC?

    SciTech Connect (OSTI)

    Pennington, Michael R.

    2014-02-01

    The contribution that Jefferson Lab has made, with its 6 GeV electron beam, and will make, with its 12 GeV upgrade, to our understanding of the way the fundamental interactions work, particularly strong coupling QCD, is outlined. The physics at the GeV scale is essential even in TeV collisions.

  11. Carbon Connections | Open Energy Information

    Open Energy Info (EERE)

    Connections Jump to: navigation, search Name: Carbon Connections Place: Norfolk, England, United Kingdom Zip: NR4 7TJ Sector: Carbon Product: Carbon Connections links partner...

  12. Dabbrook Services | Open Energy Information

    Open Energy Info (EERE)

    Services Jump to: navigation, search Name: Dabbrook Services Place: Great Yarmouth, United Kingdom Zip: NR31 6PT Sector: Services Product: Provides design and engineering...

  13. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    mariapoienar@yahoo.com ; National Institute for Research and Development in Electrochemistry and Condensed Matter, Plautius Andronescu Str Nr 1, 300224 Timisoara ; Hardy,...

  14. University of Regina researchers complete milestone in major international

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    physics project at JLab (University of Regina) | Jefferson Lab uregina.ca/external/communications/releases/current/nr-03232012.html Submitted: Friday, March 23

  15. Cimon, Engstrom, Mattson, Pollet, Vanni, Suyama Page 1 of 3

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2014 RAP Committee: Draft Advice re: 100-N Draft A, v.2 Cimon, Engstrom, Mattson, Pollet, Vanni, Suyama Page 1 of 3 Draft Advice re: Proposed Plan for Remediation of the 100-NR-1 and 100-NR-2 Operable Units (DOE/RL-2012-68, Draft A) Background The 100-N area is the last of the 100 Area, River Corridor, RI/FS and Proposed Plans for submittal. The 100-N area consists of two Decision Units, NR-1, which is the source unit, and NR-2, the groundwater unit. There are 234 facilities, of which 76% have

  16. Econic Renewable Energy Solutions | Open Energy Information

    Open Energy Info (EERE)

    Econic Renewable Energy Solutions Jump to: navigation, search Name: Econic Renewable Energy Solutions Place: Norfolk, United Kingdom Zip: NR 105PQ Sector: Renewable Energy Product:...

  17. Microsoft Word - S09799_EnhancedMR.docx

    Office of Legacy Management (LM)

    Domestic Well Data This page intentionally left blank DETECTION LIMIT PARAMETER LOCATION CODE UN- CERTAINTY ZONE COMPL FLOW REL. REPORT DATE: 3/7/2013 2:01 pm CLASSIC GROUNDWATER QUALITY DATA BY PARAMETER WITH ZONE (USEE201) FOR SITE RVT01, Riverton Processing Site UNITS QUALIFIERS: LAB DATA QA RESULT SAMPLE: DATE ID LOCATION TYPE NR N mg/L 0405 N001 06/13/2012 - - # 113 WL Alkalinity, Total (As CaCO3) NR N mg/L 0405 N001 12/03/2012 - - # 38 WL NR N mg/L 0422 N001 06/12/2012 - - # 168 WL NR N

  18. Careers & the disABLED Career Expo

    Broader source: Energy.gov [DOE]

    Location: Ronald Reagan Bldg, Washington, DCAttendees:  Terri Sosa (Science)POC:  Donna FriendWebsite: http://bit.ly/1tlHhNr

  19. Chemical and isotopic characteristics of fluids within the Baca...

    Open Energy Info (EERE)

    by conductive reheating during downward movement. Chemical modeling using the EQ3NR computer code indicates chemical stability with the mineral assemblage quartz, albite, K-mica,...

  20. GE-Prolec CCE Meeting October 19,2010 | Department of Energy

    Energy Savers [EERE]

    GE-Prolec CCE Meeting October 19,2010 GE-Prolec CCE Meeting October 19,2010 GE-Prolec CCE meeting of October 19, 2010 concerning Docket No. EERE-2010-BT-CE-0014 PDF icon GE-Prolec CCE Meeting October 19,2010 More Documents & Publications Microsoft PowerPoint - GE-Prolec CCE Meeting 10/19/2010 Microsoft Word - CCE_Final_Rule_02-07-11 _Final Word_.docx Federal Register Vol. 76 No. 44, 12422-12505 - Energy Conservation Program: Certification, Compliance, and Enforcement for Consumer Products

  1. Microsoft PowerPoint - GE-Prolec CCE Meeting 10/19/2010 | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy PowerPoint - GE-Prolec CCE Meeting 10/19/2010 Microsoft PowerPoint - GE-Prolec CCE Meeting 10/19/2010 PowerPoint slides on GE-Prolec CCE meeting regarding Docket No. EERE-2010-BT-CE-0014 PDF icon Microsoft PowerPoint - GE-Prolec CCE Meeting 10/19/2010 More Documents & Publications GE-Prolec CCE Meeting October 19,2010 EA-1565: Final Environmental Assessment Benefits of Using Mobile Transformers and Mobile Substations for Rapidly Restoring Electrical Service: a Report to the United

  2. Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition

    SciTech Connect (OSTI)

    Cho, B.; Bareno, J.; Petrov, I.; Greene, J. E.

    2011-05-01

    The predeposition of P, with coverages {theta}{sub P} ranging from 0 to 1 ML, on Si(001) significantly increases both the areal density and spatial self-organization of Ge islands grown by gas-source molecular beam epitaxy from hydride precursors. The Ge island density {rho}{sub Ge} initially increases with {theta}{sub P}, reaching a maximum of 1.4 x 10{sup 10} cm{sup -2} at {theta}{sub P} = 0.7 ML, a factor of four times higher than on bare Si(001) under the same deposition conditions, before decreasing at higher P coverages. The increase in {rho}{sub Ge}({theta}{sub P}) is due to a corresponding decrease in Ge adatom mean free paths resulting from passivation of surface dangling bonds by adsorbed pentavalent P atoms which, in addition, leads to surface roughening and, therefore, higher Ge coverages at constant Ge{sub 2}H{sub 6} dose. As {theta}{sub P} (and hence, {rho}{sub Ge}) increases, so does the degree of Ge island ordering along <100> directions due to the anisotropic strain field surrounding individual islands. Similar results are obtained for Ge island growth on P-doped Si(001) layers where strong P surface segregation provides partial monolayer coverage prior to Ge deposition.

  3. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  4. GRB 131231A: IMPLICATIONS OF THE GeV EMISSION

    SciTech Connect (OSTI)

    Liu, Bin; Chen, Wei; Liang, Yun-Feng; Zhou, Bei; He, Hao-Ning; Jin, Zhi-Ping; Fan, Yi-Zhong; Wei, Da-Ming [Key laboratory of Dark Matter and Space Astronomy, Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China); Tam, Pak-Hin Thomas [Institute of Astronomy and Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Shao, Lang, E-mail: liangyf@pmo.ac.cn, E-mail: beizhou@pmo.ac.cn, E-mail: yzfan@pmo.ac.cn, E-mail: dmwei@pmo.ac.cn, E-mail: phtam@phys.nthu.edu.tw [Department of Physics, Hebei Normal University, Shijiazhuang 050024 (China)

    2014-05-20

    GRB 131231A was detected by the Large Area Telescope on board the Fermi Space Gamma-ray Telescope. The high-energy gamma-ray (>100MeV) afterglow emission spectrum is F {sub ?}??{sup 0.54} {sup } {sup 0.15} in the first ?1300s after the trigger and the most energetic photon has an energy of ?62GeV, arriving at t ? 520s. With reasonable parameters of the gamma-ray burst (GRB) outflow as well as the density of the circum-burst medium, the synchrotron radiation of electrons or protons accelerated at an external forward shock have difficulty accounting for the data. Rather, the synchrotron self-Compton radiation of the forward shock-accelerated electrons can account for both the spectrum and temporal behavior of theGeV afterglow emission. We also show that the prospect for detecting GRB 131231A-like GRBs with the Cherenkov Telescope Array is promising.

  5. The 12 GeV Energy Upgrade at Jefferson Laboratory

    SciTech Connect (OSTI)

    Pilat, Fulvia C.

    2012-09-01

    Two new cryomodules and an extensive upgrade of the bending magnets at Jefferson Lab has been recently completed in preparation for the full energy upgrade in about one year. Jefferson Laboratory has undertaken a major upgrade of its flagship facility, the CW re-circulating CEBAF linac, with the goal of doubling the linac energy to 12 GeV. I will discuss here the main scope and timeline of the upgrade and report on recent accomplishments and the present status. I will then discuss in more detail the core of the upgrade, the new additional C100 cryomodules, their production, tests and recent successful performance. I will then conclude by looking at the future plans of Jefferson Laboratory, from the commissioning and operations of the 12 GeV CEBAF to the design of the MEIC electron ion collider.

  6. Nucleon Form Factors above 6 GeV

    DOE R&D Accomplishments [OSTI]

    Taylor, R. E.

    1967-09-01

    This report describes the results from a preliminary analysis of an elastic electron-proton scattering experiment... . We have measured cross sections for e-p scattering in the range of q{sup 2} from 0.7 to 25.0 (GeV/c){sup 2}, providing a large region of overlap with previous measurements. In this experiment we measure the cross section by observing electrons scattered from a beam passing through a liquid hydrogen target. The scattered particles are momentum analyzed by a magnetic spectrometer and identified as electrons in a total absorption shower counter. Data have been obtained with primary electron energies from 4.0 to 17.9 GeV and at scattering angles from 12.5 to 35.0 degrees. In general, only one measurement of a cross section has been made at each momentum transfer.

  7. Inventors in Action: Extreme Subsea Machines | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inventors in Action: Extreme Subsea Machines Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Inventors in Action: Extreme Subsea Machines GE Researchers Oliver Astley, Power Conversion and Delivery Technology Leader, Konrad Weeber, Chief Engineer, Electrical Technologies and Systems, and Sergio Sabedotti, Offshore and

  8. Engineering Camp Puts STEAM Roller in Motion |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering Institute Exposes Young Girls to Engineering Fields Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Engineering Institute Exposes Young Girls to Engineering Fields Cheryl Sabourin 2014.08.13 GE Global Research recently hosted 30 middle schools students from the Niskayuna Engineering Institute for Young

  9. Industrial Dojo Program Fosters Industrial Internet Development | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Launches Cloud Foundry 'Industrial Dojo,' Contributes to Open Source to Foster Continued Development of the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Launches Cloud Foundry 'Industrial Dojo,' Contributes to Open Source to Foster Continued Development of the Industrial Internet

  10. Quantum confinement in Si and Ge nanostructures: Theory and experiment

    SciTech Connect (OSTI)

    Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.

    2014-03-15

    The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO{sub 2}, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si{sub 3}N{sub 4} and Al{sub 2}O{sub 3}. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.

  11. Exclusive processes at JLab at 6 GeV

    SciTech Connect (OSTI)

    Kim, Andrey

    2015-01-01

    Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS) and Deeply Virtual Meson Production (DVMP) have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for ?0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and ?t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs) model. Successful description of the recent CLAS ?0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

  12. Characterization of second-phase plates in a Gd5Ge3 intermetallic compound

    SciTech Connect (OSTI)

    Cao, Qing; Chumbley, Leonard S.

    2013-05-16

    Rare-earth compounds based on the stoichiometry R5(SixGe1?x)4 (R = rare-earth elements) exhibit many unusual features, including possessing R5(SixGe1?x)3 thin plates which always precipitate from the matrix despite efforts to suppress their formation. In an effort to better understand the unique relationship between these two intermetallic alloy systems, the bulk microstructure of the compound Gd5Ge3 was examined using scanning (SEM) and transmission electron microscopy (TEM) and optical microscopy. Surprisingly, SEM examination revealed a series of thin plates present in the Gd5Ge3 matrix similar to what is seen in Gd5Ge4. TEM observation revealed that a role reversal had occurred, with the thin plates possessing the orthorhombic structure and composition of Gd5Ge4. The orientation relationship between Gd5Ge4 thin plates and the Gd5Ge3 matrix was determined to be Graphic the same relationship reported for Gd5Ge3 plates precipitating from a Gd5Ge4 matrix. However, by exchanging the respective roles of the phases as regards matrix vs. precipitate, the total number of precipitation variants seen can be increased from two to six. The persistence with which these two intermetallic systems co-exist is truly unique. However, understanding exactly the kinetic and thermodynamic conditions that lead to their unique relationship is hampered by the high formation temperatures at which the observed reaction occurs.

  13. Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers

    SciTech Connect (OSTI)

    Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo; Lei, Xiao-Wu

    2013-10-15

    One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å{sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2−} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2−} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV–vis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2−} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: • One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. • The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2−} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. • The first example of inorganic–organic hybrid thiogermanates with mixed valent Ge centers.

  14. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    SciTech Connect (OSTI)

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman; Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H.; Loubychev, Dmitri; Liu, Amy; Fastenau, Joel; Lindemuth, Jeff

    2014-08-04

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5 lower effective mass for s-InSb compared to s-Ge quantum well at 1.9??10{sup 12}?cm{sup 2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  15. Observation of optical spin injection into Ge-based structures at room temperature

    SciTech Connect (OSTI)

    Yasutake, Yuhsuke; Hayashi, Shuhei; Fukatsu, Susumu; Yaguchi, Hiroyuki

    2013-06-17

    Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge{sub 0.8}Si{sub 0.2} quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge.

  16. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    SciTech Connect (OSTI)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-03-22

    The stability of the crystalline phase of binary phase-change Ge{sub x}Sb{sub 1-x} films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T{sub Ge}{sup p} to the rate of change dT{sub cryst}/dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T{sub cryst} is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  17. Diamond turning of Si and Ge single crystals

    SciTech Connect (OSTI)

    Blake, P.; Scattergood, R.O.

    1988-12-01

    Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

  18. Work & Life at Rio de Janeiro | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Work & Life at Rio de Janeiro Work & Life at Rio de Janeiro Brazil's Research and Development Hub offers the bustle of one of South America's biggest cities alongside world-famous beaches. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Employee Organizations GE Volunteers Council of Rio de Janeiro This group of

  19. Predix and Robots in CT Systems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Robots and Predix make Beijing's CT factory brilliant Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Robots and Predix make Beijing's CT factory brilliant Guoshuang Cai 2015.04.16 GE Healthcare's Beijing plant is one of the largest factories producing computed tomography (CT) systems in the world. More than 1,000 CT

  20. ARM - VAP Product - mmcrmode3ge200404141cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4141cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027344 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200404141CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments, 20040415 version Active Dates 2004.04.15 - 2007.11.27 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements

  1. ARM - VAP Product - mmcrmode3ge200408121cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8121cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027345 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200408121CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments (8/04-5/05) Active Dates 2004.08.13 - 2008.04.17 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements The

  2. ARM - VAP Product - mmcrmode3ge200511041cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    511041cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027346 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200511041CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments (since 11/2005) Active Dates 2005.11.04 - 2011.02.27 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements

  3. ARM - VAP Product - mmcrmode3ge200606161cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    6161cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1095384 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200606161CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments (version 6/2006) Active Dates 2006.06.21 - 2011.03.07 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements

  4. ARM - VAP Product - mmcrmode3ge200608161cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8161cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027348 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200608161CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments (version 11/2006) Active Dates 2006.11.27 - 2009.02.14 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements

  5. ARM - VAP Product - mmcrmode3ge200712011cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    712011cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027349 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200712011CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments Active Dates 2008.01.01 - 2011.03.23 Originating VAP Process MMCR mode moments, derived by ARSCL process : MMCRMODE Measurements The

  6. News From the 2012 Turbine Technology Symposium | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    News From the 2012 Turbine Technology Symposium Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) News From the 2012 Turbine Technology Symposium Jon Slepski 2012.11.29 Hi, my name is Jon Slepski and I manage the Turbine Thermal Physics and Measurements Lab at GE Global Research in Niskayuna, NY. The primary focus of my

  7. Application of RTG (SiGe) technology to MESUR

    SciTech Connect (OSTI)

    Vicente, F.A. )

    1993-01-15

    This paper discusses providing electrical power for the Mars Environmental Survey (MESUR) mission. The use of radioisotope thermoelectric generator (RTG) technology using SiGe enables total satisfaction of the mission requirements. This technology permits placing the survey landers at any location on Mars, with the capability of transmitting data directly to Earth. If a relay satellite is deployed, the modular construction of the RTG permits tailoring the power to match that mission configuration. Presented are various configurations and trades directed toward achieving operational status, first with a pathfinder'' mission and subsequently with the full complement of landers.

  8. Physical + Digital: The New Power Couple |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Physical + Digital = the New Power Couple Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Physical + Digital = the New Power Couple Birthed from the marriage of physical and digital industrial concepts, Digital Twin is GE's foundational analytic that aims to bring increased insight, understanding, and added value to

  9. Digital Twins of physical assets prevents unplanned downtime | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research a 'Digital Twin' for physical assets can help achieve no unplanned downtime Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) How a 'Digital Twin' for physical assets can help achieve no unplanned downtime Mark Grabb and Matt Nielsen, data scientists at GE Global Research, explain the importance of data

  10. China Technology Center Celebrates 15 Years | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    China Technology Center Celebrates 15 Years of Innovation "In China for China" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's China Technology Center Celebrates 15 Years of Innovation "In China for China" Unveils Visionary Technology Blueprint called "The Next List" Shanghai, China, 5

  11. Clean Room Challenge: Nanoscientist Quiz 1 | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Clean Room Challenge: Nanoscientist Quiz 1 Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Clean Room Challenge: Nanoscientist Quiz 1 Ron Olson 2011.03.23 Hello everybody! As you know, I have been sharing with you a series of videos discussing the work that we do within the clean room at GE Global Research. However, I

  12. High-Speed Network Enables Industrial Internet | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Unveils High-Speed Network Infrastructure to Connect Machines, Data and People at Light Speed to the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Unveils High-Speed Network Infrastructure to Connect Machines, Data and People at Light Speed to the Industrial Internet New fiber optic network

  13. How Will We Live Forever? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Live Forever? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Invention Factory: How Will We Live Forever? In this episode of Invention Factory - a partnership between GE and Vice - we probe the cutting edge of medical technology that is making the world a healthier place. From cutting-edge CT scanners, to human genome

  14. How Will We Power the Planet? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Power The Planet? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Invention Factory: How Will We Power The Planet? In this episode of Invention Factory, a collaboration between GE and Vice, we look at sustainable energy sources generating power in unexpected ways. From trash to the ocean's tidal energy - all the energy

  15. At-Home Natural Gas Refueling | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    At-Home Refueling for Natural Gas (NG) Vehicles Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) At-Home Refueling for Natural Gas (NG) Vehicles In what could help fuel widespread adoption of NG vehicles in the U.S. and globally, GE researchers, in partnership with Chart Industries and scientists at the University of

  16. BBQ -- Is It Science or Art? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BBQ - Is it Science or Art? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) BBQ - Is it Science or Art? Lynn DeRose 2015.03.13 This is the first in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art Brilliant Super-Smoker is outfitted with sensors to

  17. Inventors in Action: Energy Everywhere | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inventors in Action: Energy Everywhere Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Inventors in Action: Energy Everywhere Different parts of the world present different problems and have different needs in the quest to deliver clean, efficient power to homes and businesses. In this Google+ Hangout, GE experts from

  18. Industrial Materials and Inspection Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Materials and Inspection Technologies Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Industrial Materials and Inspection Technologies Waseem Faidi 2013.06.12 Hi, I am Waseem Faidi and I lead the Inspection and Metrology Lab at GE Global Research in developing novel inspection and process monitoring solutions

  19. Meeting Energy Needs in Brazil |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking a Decade Ahead: Electrical Power Generation in Brazil Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Looking a Decade Ahead: Electrical Power Generation in Brazil Ricardo Hernandez Pereira 2014.11.03 In the Bioenergy Systems Organization at GE Global Research - Rio de Janeiro (GRC-R), we research both new

  20. Microsoft Word - DOE-ID-13-005 GE Hitachi EC B3-6.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5 SECTION A. Project Title: Next Generation Electromagnetic Pump: Analysis Tools and Insulation Materials Development - GE Hitachi Nuclear Energy Americas LLC SECTION B. Project Description GE Hitachi, teaming with Argonne National Laboratory, proposes to improve electromagnetic (EM) pump analysis model and EM design and analysis tools for next-generation EM pumps. Additionally, GE Hitachi proposes to develop, produce, and evaluate samples of new pump insulation materials. SECTION C.

  1. GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes

    Office of Environmental Management (EM)

    Washers | Department of Energy to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer machines. GE also urges the DOE to adopt recommended approaches to deal with manufacturers and products impacted by adjusting clothes

  2. Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells

    SciTech Connect (OSTI)

    Fan, W. J.

    2013-11-14

    Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band kp method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30??10{sup 18}?cm{sup ?3}.

  3. Charge trapping of Ge-nanocrystals embedded in TaZrO{sub x} dielectric films

    SciTech Connect (OSTI)

    Lehninger, D. Seidel, P.; Geyer, M.; Schneider, F.; Heitmann, J.; Klemm, V.; Rafaja, D.; Borany, J. von

    2015-01-12

    Ge-nanocrystals (NCs) were synthesized in amorphous TaZrO{sub x} by thermal annealing of co-sputtered Ge-TaZrO{sub x} layers. Formation of spherical shaped Ge-NCs with small variation of size, areal density, and depth distribution was confirmed by high-resolution transmission electron microscopy. The charge storage characteristics of the Ge-NCs were investigated by capacitance-voltage and constant-capacity measurements using metal-insulator-semiconductor structures. Samples with Ge-NCs exhibit a maximum memory window of 5 V by sweeping the bias voltage from −7 V to 7 V and back. Below this maximum, the width of the memory window can be controlled by the bias voltage. The fitted slope of the memory window versus bias voltage characteristics is very close to 1 for samples with one layer Ge-NCs. A second layer Ge-NCs does not result in a second flat stair in the memory window characteristics. Constant-capacity measurements indicate charge storage in trapping centers at the interfaces between the Ge-NCs and the surrounding materials (amorphous matrix/tunneling oxide). Charge loss occurs by thermal detrapping and subsequent band-to-band tunneling. Reference samples without Ge-NCs do not show any memory window.

  4. GE Hydro Asia Co Ltd formerly Kvaerner Power Equipment Co Ltd...

    Open Energy Info (EERE)

    Kvaerner Power Equipment Co Ltd Kvaerner Hangfa Jump to: navigation, search Name: GE Hydro Asia Co Ltd (formerly Kvaerner Power Equipment Co., Ltd (Kvaerner Hangfa)) Place:...

  5. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination...

    Office of Scientific and Technical Information (OSTI)

    Title: Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 Authors: Kono, Yoshio ; Kenney-Benson, Curtis ; Ikuta, Daijo ; Shibazaki, Yuki ; Wang, Yanbin ; ...

  6. Atomic structure of amorphous and crystallized Ge{sub 15}Sb{sub...

    Office of Scientific and Technical Information (OSTI)

    After crystallizing the specimen, x-ray diffraction (XRD) and EXAFS measurements have been ... For the corresponding sample, XRD does not show reflections of Ge, which indicates that ...

  7. Commissioning of the 123 MeV injector for 12 GeV CEBAF

    SciTech Connect (OSTI)

    Wang, Yan; Hofler, Alicia S.; Kazimi, Reza

    2015-09-01

    The upgrade of CEBAF to 12GeV included modifications to the injector portion of the accelerator. These changes included the doubling of the injection energy and relocation of the final transport elements to accommodate changes in the CEBAF recirculation arcs. This paper will describe the design changes and the modelling of the new 12GeV CEBAF injector. Stray magnetic fields have been a known issue for 6 GeV CEBAF injector, the results of modelling the new 12GeV injector and the resulting changes implemented to mitigate this issue are describe in this paper. The results of beam commissioning of the injector are also presented.

  8. Smaller RFID Sensors Use Less Power to Detect Threats | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    are Smaller, Use Less Power to Detect Chemical Threats Radislav Potyrailo 2015.02.17 Hello Earth We have reached a significant milestone with GE's radio-frequency...

  9. Optical Observations of Gamma-Ray Bursts: Connections to GeV...

    Office of Scientific and Technical Information (OSTI)

    Observations of Gamma-Ray Bursts: Connections to GeVTeV Jets Vestrand, W. Thomas Los Alamos National Laboratory Astronomy & Astrophysics(79) Astronomy and Astrophysics Astronomy...

  10. 18.5 Million in New Research Program Funding Announced, GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

  11. Detector development for Jefferson Lab's 12GeV Upgrade

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qiang, Yi

    2015-05-01

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers,more » the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.« less

  12. Conduction band offset at GeO{sub 2}/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

    SciTech Connect (OSTI)

    Zhang, W. F.; Nishimula, T.; Nagashio, K.; Kita, K.; Toriumi, A.

    2013-03-11

    We report a consistent conduction band offset (CBO) at a GeO{sub 2}/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and substrate type variance, while an accurate determination of valence band offset (VBO) by XPS requires a careful correction of differential charging phenomena. The VBO value was determined to be 3.60 {+-} 0.2 eV by XPS after charge correction, thus yielding a CBO (1.60 {+-} 0.2 eV) in excellent agreement with the IPE results. Such a large CBO (>1.5 eV) confirmed here is promising in terms of using GeO{sub 2} as a potential passivation layer for future Ge-based scaled CMOS devices.

  13. Prometheus Reactor I&C Software Development Methodology, for Action

    SciTech Connect (OSTI)

    T. Hamilton

    2005-07-30

    The purpose of this letter is to submit the Reactor Instrumentation and Control (I&C) software life cycle, development methodology, and programming language selections and rationale for project Prometheus to NR for approval. This letter also provides the draft Reactor I&C Software Development Process Manual and Reactor Module Software Development Plan to NR for information.

  14. Complexes of self-interstitials with oxygen atoms in Ge

    SciTech Connect (OSTI)

    Khirunenko, L. I.; Pomozov, Yu. V.; Sosnin, M. G.; Abrosimov, N. V.; Riemann, H.

    2014-02-21

    Interactions of germanium self-interstitials with interstitial oxygen atoms in Ge subjected to irradiation at ?80 K and subsequently to annealing have been studied. To distinguish the processes involving vacancies and self-interstitials the doping with tin was used. It was shown that absorption lines with maximum at 602, 674, 713 and 803 cm{sup ?1} are self-interstitials-related. Two lines at 602 and 674, which develop upon annealing in the temperature range 180240 K, belong to IO complexes, while the bands at 713 and 803 cm{sup ?1}, which emerge after annealing at T>220 K, are associated with I{sub 2}O. It is argued that the annealing of IO occurs by two mechanisms: by dissociation and by diffusion.

  15. Pressure Safety of JLAB 12GeV Upgrade Cryomodule

    SciTech Connect (OSTI)

    Cheng, Gary; Wiseman, Mark A.; Daly, Ed

    2009-11-01

    This paper reviews pressure safety considerations, per the US Department of Energy (DOE) 10CFR851 Final Rule [1], which are being implemented during construction of the 100 Megavolt Cryomodule (C100 CM) for Jefferson Lab’s 12 GeV Upgrade Project. The C100 CM contains several essential subsystems that require pressure safety measures: piping in the supply and return end cans, piping in the thermal shield and the helium headers, the helium vessel assembly which includes high RRR niobium cavities, the end cans, and the vacuum vessel. Due to the vessel sizes and pressure ranges, applicable national consensus code rules are applied. When national consensus codes are not applicable, equivalent design and fabrication approaches are identified and implemented. Considerations for design, material qualification, fabrication, inspection and examination are summarized. In addition, JLAB’s methodologies for implementation of the 10 CFR 851 requirements are described.

  16. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    SciTech Connect (OSTI)

    Prakash, A. P. Gnana Praveen, K. C.; Pushpa, N.; Cressler, John D.

    2015-05-15

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  17. EXC-12-0001, EXC-12-0002, EXC-12-0003- In the Matter of Philips Lighting Company, GE Lighting, and OSRAM SYLVANIA, Inc.

    Broader source: Energy.gov [DOE]

    On April 16, 2012, OHA issued a decision granting Applications for Exception filed respectively by Philips Lighting Company (Philips), GE Lighting (GE) and OSRAM SYLVANIA, Inc. (OSI) (collectively,...

  18. Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals

    SciTech Connect (OSTI)

    Maeta, Takahiro; Sueoka, Koji

    2014-08-21

    Ge-based substrates are being developed for applications in advanced nano-electronic devices because of their higher intrinsic carrier mobility than Si. The stability and diffusion mechanism of impurity atoms in Ge are not well known in contrast to those of Si. Systematic studies of the stable sites of 2nd to 6th row element impurity atoms in Ge crystal were undertaken with density functional theory (DFT) and compared with those in Si crystal. It was found that most of the impurity atoms in Ge were stable at substitutional sites, while transition metals in Si were stable at interstitial sites and the other impurity atoms in Si were stable at substitutional sites. Furthermore, DFT calculations were carried out to clarify the mechanism responsible for the diffusion of impurity atoms in Ge crystals. The diffusion mechanism for 3d transition metals in Ge was found to be an interstitial-substitutional diffusion mechanism, while in Si this was an interstitial diffusion mechanism. The diffusion barriers in the proposed diffusion mechanisms in Ge and Si were quantitatively verified by comparing them to the experimental values in the literature.

  19. Single-crystalline CuGeO{sub 3} nanorods: Synthesis, characterization and properties

    SciTech Connect (OSTI)

    Wang, Fangfang; Xing, Yan; Su, Zhongmin; Song, Shuyan

    2013-07-15

    Graphical abstract: - Highlights: Single crystalline CuGeO{sub 3} nanorods were prepared via a hydrothermal route. The material exhibits greatly enhanced activity in photocatalytic degradation of dyes. The magnetic susceptibility measurements indicate spin-Peierls transition properties. CuGeO{sub 3} nanorods may be of potential application in future integrated optical devices. - Abstract: Single crystalline CuGeO{sub 3} nanorods with a diameter of 2035 nm and a length up to 1 ?m have been prepared via a facile hydrothermal route with the assistance of ethylenediamine. Some influencing factors such as the reaction time, reaction temperature, the volume of ethylenediamine were revealed to play crucial roles in the formation of the CuGeO{sub 3} nanorods. A possible growth mechanism was proposed based on the experimental results. Significantly, this is the first time that CuGeO{sub 3} was used as a photocatalyst for organic pollutant degradation under UV light irradiation. The reaction constant (k) of CuGeO{sub 3} nanorods was five times that of the sample prepared by solid-state reaction under UV light irradiation. Additionally, the optical and magnetic properties of CuGeO{sub 3} nanorods were systematically studied.

  20. Hydrogen Sensor Based on Pd/GeO{sub 2} Using a Low Cost Electrochemical Deposition

    SciTech Connect (OSTI)

    Jawad, M. J.; Hashim, M. R.; Ali, N. K.

    2011-05-25

    This work reports on a synthesis of sub micron germanium dioxide (GeO{sub 2}) on porous silicon (PS) by electrochemical deposition. n-type Si (100) wafer was used to fabricate (PS) using conventional method of electrochemical etching in HF based solution. A GeCl{sub 4} was directly hydrolyzed by hydrogen peroxide to produce pure GeO{sub 2}, and then electrochemically deposited on PS. Followed by palladium (Pd) contact on GeO{sub 2} /PS was achieved by using RF sputtering technique. The grown GeO{sub 2} crystals were characterized using SEM and EDX. I-V characteristics of Pd/ GeO{sub 2} were recorded before and after hydrogen gas exposure as well as with different H{sub 2} concentrations and different applied temperatures. The sensitivity of Pd/ GeO{sub 2} also has been investigated it could be seen to increase significantly with increased hydrogen concentration while it decreased with increase temperature.

  1. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    SciTech Connect (OSTI)

    Pinto, S. R. C.; Ramos, M. M. D.; Gomes, M. J. M.; Buljan, M.; Chahboun, A.; Roldan, M. A.; Molina, S. I.; Bernstorff, S.; Varela, M.; Pennycook, S. J.; Barradas, N. P.; Alves, E.

    2012-04-01

    In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

  2. Hydrogen interaction kinetics of Ge dangling bonds at the Si{sub 0.25}Ge{sub 0.75}/SiO{sub 2} interface

    SciTech Connect (OSTI)

    Stesmans, A. Nguyen Hoang, T.; Afanas'ev, V. V.

    2014-07-28

    The hydrogen interaction kinetics of the GeP{sub b1} defect, previously identified by electron spin resonance (ESR) as an interfacial Ge dangling bond (DB) defect occurring in densities ?7??10{sup 12}?cm{sup ?2} at the SiGe/SiO{sub 2} interfaces of condensation grown (100)Si/a-SiO{sub 2}/Ge{sub 0.75}Si{sub 0.25}/a-SiO{sub 2} structures, has been studied as function of temperature. This has been carried out, both in the isothermal and isochronal mode, through defect monitoring by capacitance-voltage measurements in conjunction with ESR probing, where it has previously been demonstrated the defects to operate as negative charge traps. The work entails a full interaction cycle study, comprised of analysis of both defect passivation (pictured as GeP{sub b1}-H formation) in molecular hydrogen (?1?atm) and reactivation (GeP{sub b1}-H dissociation) in vacuum. It is found that both processes can be suitably described separately by the generalized simple thermal (GST) model, embodying a first order interaction kinetics description based on the basic chemical reactions GeP{sub b1}?+?H{sub 2}???GeP{sub b1}H?+?H and GeP{sub b1}H???GeP{sub b1}?+?H, which are found to be characterized by the average activation energies E{sub f}?=?1.44??0.04?eV and E{sub d}?=?2.23??0.04?eV, and attendant, assumedly Gaussian, spreads ?E{sub f}?=?0.20??0.02?eV and ?E{sub d}?=?0.15??0.02?eV, respectively. The substantial spreads refer to enhanced interfacial disorder. Combination of the separately inferred kinetic parameters for passivation and dissociation results in the unified realistic GST description that incorporates the simultaneous competing action of passivation and dissociation, and which is found to excellently account for the full cycle data. For process times t{sub a}???35?min, it is found that even for the optimum treatment temperature ?380?C, only ?60% of the GeP{sub b1} system can be electrically silenced, still far remote from device grade level. This ineffectiveness is concluded, for the major part, to be a direct consequence of the excessive spreads in the activation energies, ?23 times larger than for the Si DB P{sub b} defects at the standard thermal (111)Si/SiO{sub 2} interface which may be easily passivated to device grade levels, strengthened by the reduced difference between the average E{sub f} and E{sub d} values. Exploring the guidelines of the GST model indicates that passivation can be improved by decreasing T{sub an} and attendant enlarging of t{sub a}, however, at best still leaving ?2% defects unpassivated even for unrealistically extended anneal times. The average dissociation energy E{sub d}???2.23?eV, concluded as representing the GeP{sub b1}-H bond strength, is found to be smaller than the SiP{sub b}-H one, characterized by E{sub d}???2.83?eV. An energy deficiency is encountered regarding the energy sum rule inherent to the GST-model, the origin of which is substantiated to lie with a more complex nature of the forward passivation process than basically depicted in the GST model. The results are discussed within the context of theoretical considerations on the passivation of interfacial Ge DBs by hydrogen.

  3. Effects of rapid thermal annealing on the structural and local atomic properties of ZnO: Ge nanocomposite thin films

    SciTech Connect (OSTI)

    Ceylan, Abdullah Ozcan, Sadan; Rumaiz, Abdul K.; Caliskan, Deniz; Ozbay, Ekmel; Woicik, J. C.

    2015-03-14

    We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600 °C for 30, 60, and 90 s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27 nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO:Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA.

  4. Characterization of SiGe/Si multi-quantum wells for infrared sensing

    SciTech Connect (OSTI)

    Moeen, M.; Salemi, A.; stling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

    2013-12-16

    SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (22500??10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

  5. Observation of Parametric X-Rays Produced by 400-GeV/C Protons in Bent

    Office of Scientific and Technical Information (OSTI)

    Crystals (Journal Article) | SciTech Connect Parametric X-Rays Produced by 400-GeV/C Protons in Bent Crystals Citation Details In-Document Search Title: Observation of Parametric X-Rays Produced by 400-GeV/C Protons in Bent Crystals Spectral maxima of parametric X-ray radiation (PXR) produced by 400 GeV/c protons in bent silicon crystals aligned with the beam have been observed in an experiment at the H8 external beam of the CERN SPS. The total yield of PXR photons was about 10{sup -6} per

  6. Observation of parametric X-rays produced by 400 GeV/c protons in bent

    Office of Scientific and Technical Information (OSTI)

    crystals (Journal Article) | SciTech Connect parametric X-rays produced by 400 GeV/c protons in bent crystals Citation Details In-Document Search Title: Observation of parametric X-rays produced by 400 GeV/c protons in bent crystals Spectral maxima of parametric X-ray radiation (PXR) produced by 400 GeV/c protons in bent silicon crystals aligned with the beam have been observed in an experiment at the H8 external beam of the CERN SPS. The total yield of PXR photons was about 10{sup -6} per

  7. Barocaloric effect in the magnetocaloric prototype Gd5Si2Ge2 (Journal

    Office of Scientific and Technical Information (OSTI)

    Article) | SciTech Connect Barocaloric effect in the magnetocaloric prototype Gd5Si2Ge2 Citation Details In-Document Search Title: Barocaloric effect in the magnetocaloric prototype Gd5Si2Ge2 We report on calorimetric measurements under hydrostatic pressure that enabled us to determine the barocaloric effect in Gd5Si2Ge2. The values for the entropy change for moderate pressures compare favourably to those corresponding to the magnetocaloric effect in this compound. Entropy data are

  8. Electronic Band Dispersion Of CeAg{sub 2}Ge{sub 2} Studied Using Angle

    Office of Scientific and Technical Information (OSTI)

    Resolved Photoemission Spectroscopy (Journal Article) | SciTech Connect Electronic Band Dispersion Of CeAg{sub 2}Ge{sub 2} Studied Using Angle Resolved Photoemission Spectroscopy Citation Details In-Document Search Title: Electronic Band Dispersion Of CeAg{sub 2}Ge{sub 2} Studied Using Angle Resolved Photoemission Spectroscopy Angle resolved photoelectron spectroscopy has been used to determine the electronic band dispersion of CeAg{sub 2}Ge{sub 2} single crystal along the {Gamma}-Z

  9. Exclusive electroproduction of strange mesons with JLab 12 GeV (Conference)

    Office of Scientific and Technical Information (OSTI)

    | SciTech Connect Exclusive electroproduction of strange mesons with JLab 12 GeV Citation Details In-Document Search Title: Exclusive electroproduction of strange mesons with JLab 12 GeV We summarize the physics topics which can be addressed by measurements of high-Q^2 exclusive electroproduction of strange mesons, gamma* N -> phi N, K* Lambda, K Lambda, K Sigma, at Jefferson Lab with 11 GeV beam energy. The proposed investigations are aimed both at exploring the reaction mechanism

  10. Influence of Y substitutions on the magnetism of Gd5Ge4 (Conference) |

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Influence of Y substitutions on the magnetism of Gd5Ge4 Citation Details In-Document Search Title: Influence of Y substitutions on the magnetism of Gd5Ge4 The interrelation between the specific crystallographic positions and their influence on the magnetism of neighboring atoms is examined from first principles electronic structure calculations using the Gd{sub 5}Ge{sub 4} compound as a model system. The predicted preferences of the specific occupations by nonmagnetic yttrium

  11. Altran and GE Announce Intention to Form an Alliance to Drive Game-Changing

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Outcomes Across Industry | GE Global Research Altran and GE Announce Intention to Form an Alliance to Drive Game-Changing Outcomes Across Industry Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Altran and GE Announce Intention to Form an Alliance to Drive Game-Changing Outcomes Across Industry Both companies to

  12. Jefferson Lab Accelerator Delivers Its First 12 GeV Electrons | Jefferson

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lab Jefferson Lab Accelerator Delivers Its First 12 GeV Electrons On December 14, full-energy 12 GeV electron beam was provided for the first time, to the Experimental Hall D complex, located in the upper, left corner of this aerial photo of the Continuous Electron Beam Accelerator Facility. Hall D is the new experimental research facility - added to CEBAF as part of the 12 GeV Upgrade project. Beam was also delivered to Hall A (dome in the lower left). NEWPORT NEWS, VA, December 21, 2015 -

  13. Ultrafast terahertz-induced response of GeSbTe phase-change materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect terahertz-induced response of GeSbTe phase-change materials Citation Details In-Document Search Title: Ultrafast terahertz-induced response of GeSbTe phase-change materials The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap

  14. Volume Reflection Dependence of 400 GeV/c Protons on the Bent Crystal

    Office of Scientific and Technical Information (OSTI)

    Curvature (Journal Article) | SciTech Connect Volume Reflection Dependence of 400 GeV/c Protons on the Bent Crystal Curvature Citation Details In-Document Search Title: Volume Reflection Dependence of 400 GeV/c Protons on the Bent Crystal Curvature The trend of volume reflection parameters (deflection angle and efficiency) in a bent (110) silicon crystal has been investigated as a function of the crystal curvature with 400 GeV/c protons on the H8 beam line at the CERN Super Proton

  15. Early Commissioning Experience and Future Plans for the 12 GeV Continuous Electron Beam Accelerator Facility

    SciTech Connect (OSTI)

    Spata, Michael F.

    2014-12-01

    Jefferson Lab has recently completed the accelerator portion of the 12 GeV Upgrade for the Continuous Electron Beam Accelerator Facility. All 52 SRF cryomodules have been commissioned and operated with beam. The initial beam transport goals of demonstrating 2.2 GeV per pass, greater than 6 GeV in 3 passes to an existing experimental facility and greater than 10 GeV in 5-1/2 passes have all been accomplished. These results along with future plans to commission the remaining beamlines and to increase the performance of the accelerator to achieve reliable, robust and efficient operations at 12 GeV are presented.

  16. GE????????"??????50?"?? | GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    "50" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click...

  17. Potential improvements in SiGe radioisotope thermoelectric generator performance

    SciTech Connect (OSTI)

    Mowery, A.L.

    1999-01-01

    In accordance with NASA{close_quote}s slogan: {open_quotes}Better, Cheaper, Faster,{close_quotes} this paper will address potential improvements to SiGe RTG technology to make them Better. RTGs are doubtless cheaper than {open_quotes}paper designs{close_quotes} which are better and cheaper until development, performance and safety test costs are considered. RTGs have the advantage of being fully developed and tested in the rigors of space for over twenty years. Further, unless a new system can be accelerated tested, as were the RTGs, they cannot be deployed reliably unless a number of systems have succeeded for test periods exceeding the mission lifetime. Two potential developments are discussed that can improve the basic RTG performance by 10 to 40{sup +}{percent} depending on the mission profile. These improvements could be demonstrated in years. Accelerated testing could also be performed in this period to preserve existing RTG reliability. Data from a qualification tested RTG will be displayed, while not definitive, to support the conclusions. Finally, it is anticipated that other investigators will be encouraged to suggest further modifications to the basic RTG design to improve its performance. {copyright} {ital 1999 American Institute of Physics.}

  18. Multiple hadron production by 14. 5 GeV electron and positron scattering from nuclear targets

    SciTech Connect (OSTI)

    Degtyarenko, P.V.; Button-Shafer, J.; Elouadrhiri, L.; Miskimen, R.A.; Peterson, G.A.; Wang, K. ); Gavrilov, V.B.; Kossov, M.V.; Leksin, G.A.; Shuvalov, S.M. ); Dietrich, F.S.; Melnikoff, S.O.; Molitoris, J.D.; Bibber, K.V. )

    1994-08-01

    Multiple proton and pion electroproduction from nuclei are studied. Final states including at least two protons produced by the interaction of 14.5 GeV electrons and positrons with light nuclei (mainly [sup 12]C and [sup 16]O) have been measured, and compared with analogous data from [sup 40]Ar. Scattered electrons and positrons were detected in the energy transfer range from 0.2 to 12.5 GeV, and four-momentum transfer squared range from 0.1 to 5.0 GeV[sup 2]/[ital c][sup 2]. Phenomenological characteristics of the secondary hadron production cross sections such as temperature and velocity of the effective source of hadrons were found to be dependent on energy transfer to the nucleus and independent on the four-momentum transfer squared at energy transfers greater than 2 GeV.

  19. Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1) Citation Details In-Document Search Title: Spin-Glass Behavior in a Giant Unit Cell Compound ...

  20. Using 3D Printing to Redesign Santa's Sleigh | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    In the past, we've utilized GE technology to redesign Santa's Sleigh and have asked our additive manufacturing researchers to design and print 3D printed Christmas tree...

  1. A View of Manufacturing Through 3D Glasses | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    a.m. Eastern Time, I will be moderating a Google+ Video Hangout with top experts in the additive manufacturing space, which you can view on GE Global Research Live. I will be...

  2. Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113...

    Office of Scientific and Technical Information (OSTI)

    dependence of the freezing temperature to the critical slowing down model and Vogel-Fulcher law strongly suggest the formation of cluster glass in the Tb117Fe52Ge113.8(1) system. ...

  3. GeSi strained nanostructure self-assembly for nano- and opto...

    Office of Scientific and Technical Information (OSTI)

    nanostructure self-assembly for nano- and opto-electronics. Citation Details In-Document Search Title: GeSi strained nanostructure self-assembly for nano- and opto-electronics. ...

  4. Project planning workshop 6-GeV synchrotron light source: Volume 2

    SciTech Connect (OSTI)

    Not Available

    1986-01-01

    A series of work sheets, graphs, and printouts are given which detail the work breakdown structure, cost, and manpower requirements for the 6 GeV Synchrotron Light Source. (LEW)

  5. PET: An Emerging Tool in the Fight Against Cancer |GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    proud to say that much of the preclinical R&D work occurred right here at GE Global Research. In addition to x-ray, doctors can now tap into other imaging modalities, like MRI...

  6. Ge Interface Engineering with Ozone-oxidation for Low Interface State Density

    SciTech Connect (OSTI)

    Kuzum, Duygu; Krishnamohan, T.; Pethe, Abhijit J.; Okyay, Ali, K.; Oshima, Yasuhiro; Sun, Yun; McVittie, Jim P.; Pianetta, Piero A.; McIntyre, Paul C.; Saraswat, Krishna C.; /Stanford U., CIS

    2008-06-02

    Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this letter, we introduce ozone-oxidation to engineer Ge/insulator interface. Interface states (D{sub it}) values across the bandgap and close to conduction bandedge were extracted using conductance technique at low temperatures. D{sub it} dependency on growth conditions was studied. Minimum D{sub it} of 3 x 10{sup 11} cm{sup -2} V{sup -1} was demonstrated. Physical quality of the interface was investigated through Ge 3d spectra measurements. We found that the interface and D{sub it} is strongly affected by the distribution of oxidation states and quality of the suboxide.

  7. Black GE based on crystalline/amorphous core/shell nanoneedle arrays

    DOE Patents [OSTI]

    Javey, Ali; Chueh, Yu-Lun; Fan, Zhiyong

    2014-03-04

    Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (.about.4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (.about.75.degree.) and for relatively short nanoneedle lengths (.about.1 .mu.m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of .about.1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.

  8. Early diagenesis of germanium in sediments of the Antarctic South Atlantic: In search of the missing Ge sink

    SciTech Connect (OSTI)

    King, S.L.; Froelich, P.N.; Jahnke, R.A.

    2000-04-01

    Pore water and solid-phase geochemistry profiles were obtained from several cores between 41{degree}S and 53{degree}S in the Atlantic sector of the Southern Ocean. Pore water nitrate, manganese, and iron profiles delineate standard redox zones in these sediments, and help characterize those with classic vs. burn-down behaviors. Pore water Si and Ge profiles demonstrate that Ge released during opal dissolution is removed pervasively throughout the uppermost interval of silicate release, and also downwards into the suboxic zone by as yet unidentified precipitation mechanisms. These results indicate that early diagenesis of Ge is uncoupled from that of opal. Solid-phase extractions (Fe, Mn, U, Mo, Ge, Cu, Ni, Co, V, and Cd) in a few cores suggest that anthigenic Ge removal in the suboxic zone is not associated with peaks in authigenic Mn cycling (MnO{sub 2} and related metals) but rather with processes deeper in the sediments, perhaps Fe or U diagenesis. Below the interval of Ge removal, pre water Ge increases linearly with depth by over two orders of magnitude, indicating a deep (below recovery) source of large magnitude. The fraction of opal-derived Ge precipitated authigenically in these sediments ranges from {approximately}1 to 96% and correlates strongly with the detrital fraction as well as the detrital to opal ratio, both of which generally decrease from north to south. The Ge sink observed in these sediments would need to be globally representative to account for the entire missing Ge sink in today's oceanic Ge balance, which seems unlikely. Benthic fluxes of Ge and Si estimated from these pore water profiles and from measurements in three benthic flux chamber experiments at high carbon-rain continental margin sites demonstrate that the Ge/Si rate released from the seafloor in locations with high benthic silicate and carbon fluxes is congruent with Holocene opal dissolution (Ge/Si {approximately} 0.7 x 10{sup {minus}6}). In contrast, Ge/Si flux ratios in areas with low silicate fluxes are Ge-depleted (Ge/Si < 0.5 x 10{sup {minus}6}). The authors speculate that glacial-interglacial changes in oceanic Ge/Si as recorded in diatoms may be due in part to variations in this authigenic Ge sink, perhaps related to shifts in siliceous productivity from open ocean (Antarctic) siliceous oozes during interglacials to areas of higher detrital input (Sub Antarctic, continental margins) and possibly also to generally more reducing conditions in sediments during glacials.

  9. GeSi strained nanostructure self-assembly for nano- and opto-electronics.

    Office of Scientific and Technical Information (OSTI)

    (Technical Report) | SciTech Connect GeSi strained nanostructure self-assembly for nano- and opto-electronics. Citation Details In-Document Search Title: GeSi strained nanostructure self-assembly for nano- and opto-electronics. Strain-induced self-assembly during semiconductor heteroepitaxy offers a promising approach to produce quantum nanostructures for nanologic and optoelectronics applications. Our current research direction aims to move beyond self-assembly of the basic quantum dot

  10. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Authors: Shu, Michael J. ; Zalden, Peter ; Chen, Frank ; Weems, Ben ; Chatzakis, Ioannis ; Xiong, Feng ; Jeyasingh, Rakesh ; Hoffmann, Matthias C. ; Pop, Eric ; Wong, H.-S.Philip ; Wuttig, Matthias ; Lindenberg, Aaron M. Publication Date: 2014-07-08 OSTI

  11. AVTA: GE Smart Grid Capable AC Level 2 Testing Results | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy GE Smart Grid Capable AC Level 2 Testing Results AVTA: GE Smart Grid Capable AC Level 2 Testing Results The Vehicle Technologies Office's Advanced Vehicle Testing Activity carries out testing on a wide range of advanced vehicles and technologies on dynamometers, closed test tracks, and on-the-road. These results provide benchmark data that researchers can use to develop technology models and guide future research and development. The following report describes results from testing

  12. JLab's 12 GeV Upgrade Project Clears Critical Hurdle | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    JLab's 12 GeV Upgrade Project Clears Critical Hurdle Independent Project Review committee members Independent Project Review committee members, visiting JLab to evaluate the readiness of the 12 GeV Upgrade project, tour Hall B during their site visit. Here they view the CEBAF Large Acceptance Spectrometer as Hall B Leader Volker Burkert and Lead Engineer Dave Kashy explain the system. NEWPORT NEWS, VA - The U.S. Department of Energy's Thomas Jefferson National Accelerator Facility successfully

  13. 1.3??m photoluminescence of Ge/GaAs multi-quantum-well structure

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A. Kudryavtsev, K. E.; Rumyantsev, V. V.; Tonkikh, A. A.; Zakharov, N. D.; Zvonkov, B. N.

    2014-01-28

    In this paper, we report on photoluminescence studies of a multiple quantum well Ge/GaAs heterostructure grown by laser-assisted sputtering. A broad luminescence peak is found at about 1.3??m at room temperature. We attribute this peak to the direct band gap transitions between ?-valley electrons in the GaAs matrix and valence band heavy holes in Ge quantum wells.

  14. Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

    SciTech Connect (OSTI)

    Taoka, Noriyuki Fukudome, Motoshi; Takeuchi, Wakana; Arahira, Takamitsu; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2014-05-07

    The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200?C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500?C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33?eV from the conduction band minimum and 0.55?eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500?C was observed. The effect of H{sub 2} annealing at around 200?C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.

  15. Strain and lattice orientation distribution in SiN/Ge complementary

    Office of Scientific and Technical Information (OSTI)

    metal-oxide-semiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy (Journal Article) | SciTech Connect Strain and lattice orientation distribution in SiN/Ge complementary metal-oxide-semiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy Citation Details In-Document Search Title: Strain and lattice orientation distribution in SiN/Ge complementary metal-oxide-semiconductor compatible light emitting

  16. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Authors: Shu, Michael J. ; Zalden, Peter ; Chen, Frank ; Weems, Ben ; Chatzakis, Ioannis ; Xiong, Feng ; Jeyasingh, Rakesh ; Hoffmann, Matthias C. ; Pop, Eric ; Wong, H.-S.Philip ; Wuttig, Matthias ; Lindenberg, Aaron M. Publication Date: 2014-07-08 OSTI Identifier: 1136695 Report

  17. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | DOE PAGES Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 This content will become publicly available on September 14, 2016 Title: Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 Authors: Kono, Yoshio ; Kenney-Benson, Curtis ; Ikuta, Daijo ; Shibazaki, Yuki ; Wang, Yanbin ; Shen, Guoyin Publication Date: 2016-03-14 OSTI Identifier: 1241555 Type: Published Article Journal Name: Proceedings of the National

  18. Strangelet search in S-W collisions at 200[ital A] GeV/[ital c

    SciTech Connect (OSTI)

    Borer, K.; Dittus, F.; Frei, D.; Hugentobler, E.; Klingenberg, R.; Moser, U.; Pretzl, K.; Schacher, J.; Stoffel, F.; Volken, W. ); Elsener, K.; Lohmann, K.D. ); Baglin, C.; Bussiere, A.; Guillaud, J.P. ); Appelquist, G.; Bohm, C.; Hovander, B.; Sellden, B.; Zhang, Q.P. )

    1994-03-07

    A search for new massive particles with a low charge to mass ratio in S-W collisions at a beam momentum of 200 GeV/[ital c] per nucleon is presented. Upper limits for the production of strangelets with a mass to charge ratio of up to 60 GeV/[ital c][sup 2] at rigidities of [plus minus]150 GV are reported.

  19. Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

    SciTech Connect (OSTI)

    Ziouche, K. E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Bougrioua, Z. E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Lejeune, P.; Lasri, T.; Leclercq, D.; Savelli, G.; Hauser, D.; Michon, P.-M.

    2014-07-28

    This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (?SIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a factor up to 10 compared to the one of standard polysilicon layers that are usually used for IR sensor applications. A presentation of several TE layers, QDSL and polysilicon, is given before to describe the fabrication of the thermopile-based sensors. The theoretical values of the sensitivity to irradiance of ?SIR can be predicted thanks to an analytical model. These findings are used to interpret the experimental measurements versus the nature of the TE layer exploited in the devices. The use of nanostructured QDSL as the main material in ?SIR thermopile has brought a sensitivity improvement of about 28% consistent with theoretical predictions. The impact of QDSL low thermal conductivity is damped by the contribution of the thermal conductivity of all the other sub-layers that build up the device.

  20. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  1. Microstructure study of the rare-earth intermetallic compounds R5(SixGe1-x)4 and R5(SixGe1-x)3

    SciTech Connect (OSTI)

    Cao, Qing

    2012-07-26

    The unique combination of magnetic properties and structural transitions exhibited by many members of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family (R = rare earths, 0 ≤ x ≤ 1) presents numerous opportunities for these materials in advanced energy transformation applications. Past research has proven that the crystal structure and magnetic ordering of the R{sub 5(Si{sub x}Ge{sub 1-x}){sub 4} compounds can be altered by temperature, magnetic field, pressure and the Si/Ge ratio. Results of this thesis study on the crystal structure of the Er{sub 5}Si{sub 4} compound have for the first time shown that the application of mechanical forces (i.e. shear stress introduced during the mechanical grinding) can also result in a structural transition from Gd{sub 5}Si{sub 4}-type orthorhombic to Gd{sub 5}Si{sub 2}Ge{sub 2}-type monoclinic. This structural transition is reversible, moving in the opposite direction when the material is subjected to low-temperature annealing at 500 ˚C. Successful future utilization of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family in novel devices depends on a fundamental understanding of the structure-property interplay on the nanoscale level, which makes a complete understanding of the microstructure of this family especially important. Past scanning electron microscopy (SEM) observation has shown that nanometer-thin plates exist in every R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} (“5:4”) phase studied, independent of initial parent crystal structure and composition. A comprehensive electron microscopy study including SEM, energy dispersive spectroscopy (EDS), selected area diffraction (SAD), and high resolution transmission electron microscopy (HRTEM) of a selected complex 5:4 compound based on Er rather than Gd, (Er{sub 0.9Lu{sub 0.1}){sub 5}Si{sub 4}, has produced data supporting the assumption that all the platelet-like features present in the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family are hexagonal R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 3} (“5:3”) phase and possess the same reported orientation relationship that exists for the Gd{sub 5}Ge{sub 4} and Gd{sub 5}Si{sub 2}Ge{sub 2} compounds, i.e. [010](102̅){sub m} || [101̅0](12̅11){sub p}. Additionally, the phase identification in (Er{sub 0.9}Lu{sub 0.1}){sub 5}Si{sub 4} carried out using X-ray powder diffraction (XRD) techniques revealed that the low amount of 5:3 phase is undetectable in a conventional laboratory Cu Kα diffractometer due to detection limitations, but that extremely low amounts of the 5:3 phase can be detected using high resolution powder diffraction (HRPD) employing a synchrotron source. These results suggest that use of synchrotron radiation for the study of R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} compounds should be favored over conventional XRD for future investigations. The phase stability of the thin 5:3 plates in a Gd{sub 5}Ge{sub 4} sample was examined by performing long-term annealing at very high temperature. The experimental results indicate the plates are thermally unstable above 1200˚C. While phase transformation of 5:3 to 5:4 occurs during the annealing, the phase transition is still fairly sluggish, being incomplete even after 24 hours annealing at this elevated temperature. Additional experiments using laser surface melting performed on the surface of a Ho{sub 5}(Si{sub 0.8}Ge{sub 0.}2){sub 4} sample showed that rapid cooling will suppress the precipitation of 5:3 plates. Bulk microstructure studies of polycrystalline and monocrystalline Gd{sub 5}Ge{sub 3} compounds examined using optical microscopy, SEM and TEM also show a series of linear features present in the Gd{sub 5}Ge{sub 3} matrix, similar in appearance in many ways to the 5:3 plates observed in R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} compounds. A systematic microscopy analysis of these linear features revealed they also are thin plates with a stoichiometric composition of Gd{sub 5}Ge{sub 4} with an orthorhombic structure. The orientation relationship between the 5:3 matrix and the precipitate 5:4 thin plates was determined as [101̅0] (12̅11){sub m} || [010] (102̅){sub p} .

  2. The First-cycle Electrochemical Lithiation of Crystalline Ge Dopant and Orientation Dependence, and Comparison with Si

    SciTech Connect (OSTI)

    Chan, Maria K.Y.; Long, Brandon R.; Gewirth, Andrew A.; Greeley, Jeffrey P.

    2011-12-15

    We use first principles Density Functional Theory (DFT), cyclic voltammetry (CV), and Raman spectroscopy to investigate the first-cycle electrochemical lithiation of Ge in comparison with Si both high-capacity anode materials for Li ion batteries. DFT shows a significant difference in the dilute solubility of Li in Si and Ge, despite similarities in their chemical and physical properties. We attribute this difference to electronic, as opposed to elastic, effects. CV and Raman data reveal little dopant dependence in the lithiation onset voltages in Ge, unlike in Si, due to a smaller energy difference between dilute Li insertion in p-type Ge and bulk germanide formation than the corresponding difference in Si. Finally, we show that there is no orientation dependence in lithiation onset voltages in Ge. We conclude that approaches other than microstructuring are needed to fabricate effective electrodes able to take advantage of the higher rate capability of Ge compared to that of Si.

  3. Electrical properties of diluted n- and p-Si{sub 1?x}Ge{sub x} at small x

    SciTech Connect (OSTI)

    Emtsev, V. V., E-mail: emtsev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Abrosimov, N. V. [Leibniz Institute for Crystal Growth (Germany); Kozlovskii, V. V. [St. Petersburg Polytechnical State University (Russian Federation); Oganesyan, G. A. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

    2014-12-15

    Hall effect and conductivity measurements are taken on Si{sub 1?x}Ge{sub x} of n- and p-type at x ? 0.05. Much attention is given to electrical measurements over a temperature interval of 25 to 40 K where the mobility of charged carriers is strongly affected by alloy scattering. The partial mobility of electrons and holes due to this scattering mechanism is estimated for n-Si{sub 1?x}Ge{sub x} and p-Si{sub 1?x}Ge{sub x} at small x. Together with this, an effect of the presence of Ge atoms upon the ionization energy of phosphorus and boron impurities is investigated. Some points related to an inhomogeneous distribution of Ge atoms in Si{sub 1?x}Ge{sub x} are discussed.

  4. Microsoft Word - 1aDOE-ID-12-048 GE EC B3-6.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8 SECTION A. Project Title: Ferritic Martensitic Alloys as Accident Tolerant Fuel Cladding Material for Light Water Reactors - GE Global Research SECTION B. Project Description The GE Global Research (GE-GRC) team, which includes the University of Michigan, Los Alamos National Laboratory, and Global Nuclear Fuels, will demonstrate the feasibility that ferritic materials will be suitable for fuel cladding material in current light water reactors as accident tolerant fuel. The objective is to show

  5. DEGREE-SCALE GeV 'JETS' FROM ACTIVE AND DEAD TeV BLAZARS

    SciTech Connect (OSTI)

    Neronov, A.; Semikoz, D.; Kachelriess, M.; Ostapchenko, S.; Elyiv, A.

    2010-08-20

    We show that images of TeV blazars in the GeV energy band should contain, along with point-like sources, degree-scale jet-like extensions. These GeV extensions are the result of electromagnetic cascades initiated by TeV {gamma}-rays interacting with extragalactic background light and the deflection of the cascade electrons/positrons in extragalactic magnetic fields (EGMFs). Using Monte Carlo simulations, we study the spectral and timing properties of the degree-scale extensions in simulated GeV band images of TeV blazars. We show that the brightness profile of such degree-scale extensions can be used to infer the light curve of the primary TeV {gamma}-ray source over the past 10{sup 7} yr, i.e., over a time scale comparable to the lifetime of the parent active galactic nucleus. This implies that the degree-scale jet-like GeV emission could be detected not only near known active TeV blazars, but also from 'TeV blazar remnants', whose central engines were switched off up to 10 million years ago. Since the brightness profile of the GeV 'jets' depends on the strength and the structure of the EGMF, their observation provides additional information about the EGMF.

  6. Highly bent (110) Ge crystals for efficient steering of ultrarelativistic beams

    SciTech Connect (OSTI)

    De Salvador, D.; Maggioni, G.; Carturan, S.; Bazzan, M.; Argiolas, N.; Carnera, A.; Dalla Palma, M.; Della Mea, G.; Bagli, E.; Mazzolari, A.; Bandiera, L.; Guidi, V.; Lietti, D.; Berra, A.; Guffanti, G.; Prest, M.; Vallazza, E.

    2013-10-21

    Thanks to the effective electrostatic potential generated by the ordered atomic structure, bent crystals can efficiently deflect ultra relativistic charged beams by means of planar and axial channeling phenomena as well as of the recently discovered volume reflection effect. Most of the experimental knowledge about these phenomena has been gathered with Si crystals, but it has been recently demonstrated that the steering performance can be improved by using high quality Ge materials which have a larger atomic number. In this paper, we investigate channeling and volume reflection of 400 GeV protons from (110) lattice planes in highly bent Ge strips crystals. Both production and characterization of the strips are presented. Herein, the experimental results on deflection are compared with theoretical predictions, with previous published data and with the expected performances of Si crystals in similar experimental conditions.

  7. Si/SiGe electron resonant tunneling diodes with graded spacer wells

    SciTech Connect (OSTI)

    Paul, D. J.; See, P.; Bates, R.; Griffin, N.; Coonan, B. P.; Redmond, G.; Crean, G. M.; Zozoulenko, I. V.; Berggren, K.-F.; Hollander, B.

    2001-06-25

    Resonant tunneling diodes have been fabricated using graded Si{sub 1{minus}x}Ge{sub x} (x=0.3{r_arrow}0.0) spacer wells and strained Si{sub 0.4}Ge{sub 0.6} barriers on a relaxed Si{sub 0.7}Ge{sub 0.3} n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08A/cm{sup 2} with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work. {copyright} 2001 American Institute of Physics.

  8. Pd-vacancy complex in Ge: TDPAC and ab initio study

    SciTech Connect (OSTI)

    Abiona, Adurafimihan A.; Kemp, Williams; Timmers, Heiko

    2014-02-21

    Low temperature metal-induced-crystallized germanium is a promising alternative for silicon in Complementary Metal-Oxide-Semiconductor (CMOS) technology. Palladium (Pd) is one of the metals suitable for inducing the low temperature crystallization. It is not certain, how residual Pd atoms are integrated into the Ge lattice. Therefore, time-different ?-? perturbed angular correlation (TDPAC) technique using the {sup 100}Pd(?{sup 100}Rh) nuclear probe has been applied to study the hyperfine interactions of this probe in single crystalline undoped Ge. A Pd-vacancy (Pd-V) complex with a unique interaction frequency of 8.4(2) Mrad/s has been identified. The Pd-V complex has been measured to have a maximum fraction after annealing at 350 C. Density functional theory calculations have confirmed that the Pd-V complex may have the split-vacancy configuration in Ge, in contrast to the full-vacancy configuration observed in Si.

  9. GE 超微型开关技术展示高性能

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    满足新一代4G移动设备的要求 | GE Global Research GE 超微型开关技术展示高性能 满足新一代4G移动设备的要求 Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE 超微型开关技术展示高性能 满足新一代4G移动设备的要求

  10. Electronic structural and magnetic properties of Mn{sub 5}Ge{sub 3} clusters

    SciTech Connect (OSTI)

    Yuan, H. K.; Chen, H. Kuang, A. L.; Tian, C. L.; Wang, J. Z.

    2013-11-28

    Theoretical understanding of the stability, ferromagnetism, and spin polarization of Mn{sub 5}Ge{sub 3} clusters has been performed by using the density functional theory with generalized gradient approximation for exchange and correlation. The magnetic moments and magnetic anisotropy energy (MAE) have been calculated for both bulk and clusters, and the enhanced magnetic moment as well as the enlarged MAE have been identified in clusters. The most attractive achievement is that Mn{sub 5}Ge{sub 3} clusters show a fine half-metallic character with large energy scales. The present results may have important implications for potential applications of small Mn{sub 5}Ge{sub 3} clusters as both emerging spintronics and next-generation data-storage technologies.

  11. Photoemission Study of the Rare Earth Intermetallic Compounds: RNi2Ge2 (R=Eu, Gd)

    SciTech Connect (OSTI)

    Jongik Park

    2004-12-19

    EuNi{sub 2}Ge{sub 2} and GdNi{sub 2}Ge{sub 2} are two members of the RT{sub 2}X{sub 2} (R = rare earth, T = transition metal and X = Si, Ge) family of intermetallic compounds, which has been studied since the early 1980s. These ternary rare-earth intermetallic compounds with the tetragonal ThCr{sub 2}Si{sub 2} structure are known for their wide variety of magnetic properties, Extensive studies of the RT{sub 2}X{sub 2} series can be found in Refs [ 1,2,3]. The magnetic properties of the rare-earth nickel germanides RNi{sub 2}Ge{sub 2} were recently studied in more detail [4]. The purpose of this dissertation is to investigate the electronic structure (both valence band and shallow core levels) of single crystals of EuNi{sub 2}Ge{sub 2} and GdNi{sub 2}Ge{sub 2} and to check the assumptions that the f electrons are non-interacting and, consequently, the rigid-band model for these crystals would work [11], using synchrotron radiation because, to the best of our knowledge, no photoemission measurements on those have been reported. Photoemission spectroscopy has been widely used to study the detailed electronic structure of metals and alloys, and especially angle-resolved photoemission spectroscopy (ARPES) has proven to be a powerful technique for investigating Fermi surfaces (FSs) of single-crystal compounds.

  12. Nitrogen-doped and simultaneously reduced graphene oxide with superior dispersion as electrocatalysts for oxygen reduction reaction

    SciTech Connect (OSTI)

    Lee, Cheol-Ho; Yun, Jin-Mun; Lee, Sungho; Jo, Seong Mu; Yoo, Sung Jong; Cho, Eun Ae; Khil, Myung-Seob; Joh, Han-Ik

    2014-11-15

    Nitrogen doped graphene oxide (Nr-GO) with properties suitable for electrocatalysts is easily synthesized using phenylhydrazine as a reductant at relatively low temperature. The reducing agent removes various oxygen functional groups bonded to graphene oxide and simultaneously dope the nitrogen atoms bonded with phenyl group all over the basal planes and edge sites of the graphene. The Nr-GO exhibits remarkable electrocatalytic activities for oxygen reduction reaction compared to the commercial carbon black and graphene oxide due to the electronic modification of the graphene structure. In addition, Nr-GO shows excellent dispersibility in various solvent due to the dopant molecules.

  13. Kinetics of visible light photo-oxidation of Ge nanocrystals:Theory and in situ measurement

    SciTech Connect (OSTI)

    Sharp, I.D.; Xu, Q.; Yuan, C.W.; Beeman, J.W.; Ager III, J.W.; Chrzan, D.C.; Haller, E.E.

    2006-11-14

    Photo-oxidation of Ge nanocrystals illuminated with visible laser light under ambient conditions was investigated. The photo-oxidation kinetics were monitored by in situ measurement of the crystalline Ge volume fraction by Raman spectroscopy. The effects of laser power and energy on the extent of oxidation were measured using both in situ and ex situ Raman scattering techniques. A mechanistic model in which the tunneling of photo-excited carriers to the oxide surface for electron activated molecular oxygen dissociation is proposed. This quantitative model successfully describes all experimental photo-oxidation observations using physical parameters.

  14. Ru{sub 2}Ge{sub 3}: Crystal growth and some properties

    SciTech Connect (OSTI)

    Borshchevsky, A.; Fleurial, J.P.

    1993-10-01

    Large samples of Ru{sub 2}Ge{sub 3} were grown from Ge-rich off-stoichiometric melts at a temperature close to 1,460 C by a vertical gradient freeze method in graphite and glassy carbon crucibles. Diffusionless transition from high temperature tetragonal structure to low temperature orthorhombic structure causes twinning and crack formation. Thermal expansion coefficients of both low and high temperature phases were measured. Some electrical transport properties in the 25--1,000 C temperature range in different crystallographic directions are also described for this high temperature semiconductor. Substantial anisotropy is observed.

  15. "Big Picture" Process Modeling Tools |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Using process modeling tools to attain cost-effective results for GE customers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Using process modeling tools to attain cost-effective results for GE customers Jimmy Lopez 2015.03.26 Sometimes, we need to look outside the box to realize the powerful tools we have inside.

  16. An Exciting Journey to Build the Tier 4 Locomotive | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    An Exciting Journey to Build the Tier 4 Locomotive Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) An Exciting Journey to Build the Tier 4 Locomotive Wole Akinyemi 2012.09.05 Last week, GE unveiled the Tier 4 Locomotive. The event culminates 7 years of exciting efforts by a global GE Transportation & Global Research

  17. Straw man 900-1000 GeV crystal extraction test beam for Fermilab collider operation

    SciTech Connect (OSTI)

    Carrigan, R.A. Jr.

    1996-10-01

    A design for a 900-1000 GeV, 100 khz parasitic test beam for use during collider operations has been developed. The beam makes use of two bent crystals, one for extraction and the other one for redirecting the beam in to the present Switchyard beam system. The beam requires only a few modifications in the A0 area and largely uses existing devices. It should be straight-forward to modify one or two beam lines in the fixed target experimental areas to work above 800 GeV. Possibilities for improvements to the design,to operate at higher fluxes are discussed.

  18. Optical Observations of Gamma-Ray Bursts: Connections to GeV/TeV Jets

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Conference: Optical Observations of Gamma-Ray Bursts: Connections to GeV/TeV Jets Citation Details In-Document Search Title: Optical Observations of Gamma-Ray Bursts: Connections to GeV/TeV Jets Authors: Vestrand, W. Thomas [1] + Show Author Affiliations Los Alamos National Laboratory Publication Date: 2013-08-21 OSTI Identifier: 1091318 Report Number(s): LA-UR-13-26624 DOE Contract Number: AC52-06NA25396 Resource Type: Conference Resource Relation: Conference:

  19. Electronic structure, magnetism, and antisite disorder in CoFeCrGe and

    Office of Scientific and Technical Information (OSTI)

    CoMnCrAl quaternary Heusler alloys (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Electronic structure, magnetism, and antisite disorder in CoFeCrGe and CoMnCrAl quaternary Heusler alloys Citation Details In-Document Search This content will become publicly available on December 10, 2016 Title: Electronic structure, magnetism, and antisite disorder in CoFeCrGe and CoMnCrAl quaternary Heusler alloys In this study, we present a combined theoretical and

  20. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials × You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and is provided as a public service. Visit OSTI to utilize additional information resources in energy science and

  1. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 Citation Details In-Document Search This content will become publicly available on September 14, 2016 Title: Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 Authors: Kono, Yoshio ; Kenney-Benson, Curtis ; Ikuta, Daijo ; Shibazaki, Yuki ; Wang, Yanbin ; Shen, Guoyin Publication Date: 2016-03-14 OSTI

  2. New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    | Department of Energy GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Director, Solar Energy Technologies Office Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be

  3. €18.5 Million in New Research Program Funding Announced, GE and TUM

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    €18.5 Million in New Research Program Funding Announced as GE Marks the 10th Anniversary of its Global Research Center in Europe Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) €18.5 Million in New Research Program Funding Announced as GE Marks the 10th Anniversary of its Global Research Center in Europe New

  4. GE China Technology Center Wins Top 12 Most Innovative Practices Award of

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    "Multinational Companies in Shanghai" | GE Global Research China Technology Center Wins Top 12 Most Innovative Practices Award of "Multinational Companies in Shanghai" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE China Technology Center Wins Top 12 Most Innovative Practices Award of

  5. Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration | U.S.

    Office of Science (SC) Website

    DOE Office of Science (SC) Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees Community Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: Email Us More Information » 07.01.13 Two GeV Electrons Achieved

  6. Jefferson Lab Awards $3.54 Million Contract To Pennsylvania Firm for 12 GeV

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Project | Jefferson Lab 3.54 Million Contract To Pennsylvania Firm for 12 GeV Project NEWPORT NEWS, Va., May 1, 2009 - A Pennsylvania company has been awarded a $3.54 million contract to provide 84 klystrons to the U.S. Department of Energy's Thomas Jefferson National Accelerator Facility. The 13 kW klystrons, devices which will generate the electromagnetic fields that will accelerate the CEBAF electron beam,, will be used in the construction of the lab's 12 GeV Upgrade, a $310 million

  7. Jefferson Lab to Mark the End of CEBAF 6 GeV Operations on May 18 |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Jefferson Lab to Mark the End of CEBAF 6 GeV Operations on May 18 CEBAF_Aerial.jpg Jefferson Lab will officially end 6 GeV operations of the Continuous Electron Beam Accelerator Facility during a short ceremony planned for May 18 in the Machine Control Center. This aerial photo depicts the basic outline of the tunnel housing CEBAF - the accelerator and the experimental halls. NEWPORT NEWS, VA - The U.S. Department of Energy's Thomas Jefferson National Accelerator Facility will officially end

  8. Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides

    SciTech Connect (OSTI)

    Chen, Xi; Salta, Daniel; Zhang, Libin [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Weathers, Annie [Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Zhou, Jianshi; Goodenough, John B.; Shi, Li [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2013-11-07

    Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8??10{sup 21} and 2.2??10{sup 21}?cm{sup ?3} measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} with y?=?0.035 varies approximately as T{sup ?3/2} above 200?K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823?K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} samples with high Ge concentration of y?=?0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823?K and accounts for about 12% of the total thermal conductivity at about 800?K.

  9. Media Advisory - Jefferson Lab 12 GeV Upgrade Groundbreaking Ceremony |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Jefferson Lab Advisory - Jefferson Lab 12 GeV Upgrade Groundbreaking Ceremony What: The Department of Energy's Thomas Jefferson National Accelerator Facility will hold a groundbreaking ceremony for its $310 million 12 GeV Upgrade project. When: Tuesday, April 14, 2009. Where: CEBAF Center, Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, Va. Time: 11 a.m. If interested in a tour of research facilities, arrive at 9:15 a.m. Closed-toe, low-heel shoes are

  10. Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado

    Energy Savers [EERE]

    Plant | Department of Energy Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant October 14, 2011 - 4:03pm Addthis Thin film solar panels produced by General Electric’s PrimeStar in Arvada, Colorado | Image courtesy of <a href="http://edelman.com/">Edelman</a>. Thin film solar panels produced by General Electric's PrimeStar in Arvada, Colorado | Image

  11. Crystal structure and physical properties of quaternary clathrates Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}, Ba{sub 8}(Zn,Cu){sub x}Ge{sub 46-x} and Ba{sub 8}(Zn,Pd){sub x}Ge{sub 46-x}

    SciTech Connect (OSTI)

    Nasir, Navida; Grytsiv, Andriy; Melnychenko-Koblyuk, Nataliya; Rogl, Peter; Bednar, Ingeborg; Bauer, Ernst

    2010-10-15

    Three series of vacancy-free quaternary clathrates of type I, Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}, Ba{sub 8}(Zn,Cu){sub x}Ge{sub 46-x}, and Ba{sub 8}(Zn,Pd){sub x}Ge{sub 46-x}, have been prepared by reactions of elemental ingots in vacuum sealed quartz at 800 {sup o}C. In all cases cubic primitive symmetry (space group Pm3n, a{approx}1.1 nm) was confirmed for the clathrate phase by X-ray powder diffraction and X-ray single crystal analyses. The lattice parameters show a linear increase with increase in Ge for Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}. M atoms (Zn, Pd, Cu) preferably occupy the 6d site in random mixtures. No defects were observed for the 6d site. Site preference of Ge and Si in Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y} has been elucidated from X-ray refinement: Ge atoms linearly substitute Si in the 24k site whilst a significant deviation from linearity is observed for occupation of the 16i site. A connectivity scheme for the phase equilibria in the 'Ba{sub 8}Ge{sub 46}' corner at 800 {sup o}C has been derived and a three-dimensional isothermal section at 800 {sup o}C is presented for the Ba-Pd-Zn-Ge system. Studies of transport properties carried out for Ba{sub 8{l_brace}}Cu,Pd,Zn{r_brace}{sub x}Ge{sub 46-x} and Ba{sub 8}Zn{sub x}Si{sub y}Ge{sub 46-x-y} evidenced predominantly electrons as charge carriers and the closeness of the systems to a metal-to-insulator transition, fine-tuned by substitution and mechanical processing of starting material Ba{sub 8}Ge{sub 43}. A promising figure of merit, ZT {approx}0.45 at 750 K, has been derived for Ba{sub 8}Zn{sub 7.4}Ge{sub 19.8}Si{sub 18.8}, where pricey germanium is exchanged by reasonably cheap silicon. - Graphical abstract: Quaternary phase diagram of Ba-Pd-Zn-Ge system at 800 {sup o}C.

  12. Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate

    SciTech Connect (OSTI)

    Liu, Zhi; Li, Yaming; He, Chao; Li, Chuanbo; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen Wang, Qiming

    2014-05-12

    Horizontal injection Ge p-i-n ridge waveguide light emitting diodes (LEDs) were fabricated on n{sup ?}-Si(001) substrates by ultrahigh vacuum chemical vapor deposition. The direct-bandgap electroluminescence (EL) of Ge waveguide LEDs under a continuous/pulse electrical pump was studied. The heating effect from a continuous electrical pump was found to significantly enhance the emission of devices. The top surface EL intensity of the Ge waveguide LEDs significantly depended on the position. Most direct-bandgap radiative recombination of Ge p-i-n waveguide LEDs occurred near the N{sup +} region of the junction. This interesting phenomenon could be explained by the carrier distribution in the junction and the pseudo-direct bandgap of Ge.

  13. Magnetic structure at low temperatures in FeGe{sub 2}

    SciTech Connect (OSTI)

    Babu, P. D.; Mishra, P. K.; Dube, V.; Ravikumar, G.; Mishra, R.; Sastry, P. U.

    2014-04-24

    Magnetic phase of FeGe{sub 2} intermetallic is studied using low-temperature neutron diffraction and DC magnetization. Zero-magnetic-field neutron scattering data shows the presence of an antiferromagnetic phase in the low temperature range. We find the evidence of the presence of a ferromagnetic order overriding on the predominantly antiferromagnetic phase at low temperatures.

  14. Details and justifications for the MAP concept specification for acceleration above 63 GeV

    SciTech Connect (OSTI)

    Berg, J. Scott

    2014-02-28

    The Muon Accelerator Program (MAP) requires a concept specification for each of the accelerator systems. The Muon accelerators will bring the beam energy from a total energy of 63 GeV to the maximum energy that will fit on the Fermilab site. Justifications and supporting references are included, providing more detail than will appear in the concept specification itself.

  15. Barocaloric effect in the magnetocaloric prototype Gd5Si2Ge2

    SciTech Connect (OSTI)

    Yuce, Suheyla; Barrio, Maria; Emre, Baris; Stern-Taulats, Enric; Planes, Antoni; Tamarit, Josep-Lluis; Mudryk, Yaroslav; Gschneidner, Karl A.; Pecharsky, Vitalij K.; Manosa, Lluis

    2012-08-16

    We report on calorimetric measurements under hydrostatic pressure that enabled us to determine the barocaloric effect in Gd5Si2Ge2. The values for the entropy change for moderate pressures compare favourably to those corresponding to the magnetocaloric effect in this compound. Entropy data are complemented with direct measurements of the adiabatic pressure-induced temperature change.

  16. Atomic and electronic structure of the ferroelectric BaTiO{sub 3}/Ge(001) interface

    SciTech Connect (OSTI)

    Fredrickson, Kurt D.; Ponath, Patrick; Posadas, Agham B.; Demkov, Alexander A.; McCartney, Martha R.; Smith, David J.; Aoki, Toshihiro

    2014-06-16

    In this study, we demonstrate the epitaxial growth of BaTiO{sub 3} on Ge(001) by molecular beam epitaxy using a thin Zintl template buffer layer. A combination of density functional theory, atomic-resolution electron microscopy and in situ photoemission spectroscopy is used to investigate the electronic properties and atomic structure of the BaTiO{sub 3}/Ge interface. Aberration-corrected scanning transmission electron micrographs reveal that the Ge(001) 2??1 surface reconstruction remains intact during the subsequent BaTiO{sub 3} growth, thereby enabling a choice to be made between several theoretically predicted interface structures. The measured valence band offset of 2.7?eV matches well with the theoretical value of 2.5?eV based on the model structure for an in-plane-polarized interface. The agreement between the calculated and measured band offsets, which are highly sensitive to the detailed atomic arrangement, indicates that the most likely BaTiO{sub 3}/Ge(001) interface structure has been identified.

  17. Thermodynamic and transport properties of single crystalline RCo2Ge2 (R=Y, LaNd, SmTm)

    SciTech Connect (OSTI)

    Kong, Tai; Cunningham, Charles E.; Taufour, Valentin; Budko, Sergey L.; Buffon, Malinda L.C.; Lin, Xiao; Emmons, Heather; Canfield, Paul C.

    2014-05-01

    Single crystals of RCo2Ge2 (R=Y, LaNd, SmTm) were grown using a self-flux method and were characterized by room-temperature powder X-ray diffraction; anisotropic, temperature and field dependent magnetization; temperature and field dependent, in-plane resistivity; and specific heat measurements. In this series, the majority of the moment-bearing members order antiferromagnetically; YCo2Ge2 and LaCo2Ge2 are non-moment-bearing. Ce is trivalent in CeCo2Ge2 at high temperatures, and exhibits an enhanced electronic specific heat coefficient due to the Kondo effect at low temperatures. In addition, CeCo2Ge2 shows two low-temperature anomalies in temperature-dependent magnetization and specific heat measurements. Three members (R=TbHo) have multiple phase transitions above 1.8 K. Eu appears to be divalent with total angular momentum L =0. Both EuCo2Ge2 and GdCo2Ge2 manifest essentially isotropic paramagnetic properties consistent with J =S =7/2. Clear magnetic anisotropy for rare-earth members with finite L was observed, with ErCo2Ge2 and TmCo2Ge2 manifesting planar anisotropy and the rest members manifesting axial anisotropy. The experimentally estimated crystal electric field (CEF) parameters B 20 were calculated from the anisotropic paramagnetic ? ab and ? c values and follow a trend that agrees well with theoretical predictions. The ordering temperatures, TNTN, as well as the polycrystalline averaged paramagnetic CurieWeiss temperature, ?avg, for the heavy rare-earth members deviate from the de Gennes scaling, as the magnitude of both is the highest for Tb, which is sometimes seen for extremely axial systems. Except for SmCo2Ge2, metamagnetic transitions were observed at 1.8 K for all members that ordered antiferromagnetically.

  18. On the origin of GeV emission in gamma-ray bursts

    SciTech Connect (OSTI)

    Beloborodov, Andrei M.; Hascot, Romain; Vurm, Indrek, E-mail: amb@phys.columbia.edu [Physics Department and Columbia Astrophysics Laboratory, Columbia University, 538 West 120th Street, New York, NY 10027 (United States)

    2014-06-10

    The most common progenitors of gamma-ray bursts (GRBs) are massive stars with strong stellar winds. We show that the GRB blast wave in the wind should emit a bright GeV flash. It is produced by inverse-Compton cooling of the thermal plasma behind the forward shock. The main part of the flash is shaped by scattering of the prompt MeV radiation (emitted at smaller radii) which streams through the external blast wave. The inverse-Compton flash is bright due to the huge e {sup } enrichment of the external medium by the prompt radiation ahead of the blast wave. At late times, the blast wave switches to normal synchrotron-self-Compton cooling. The mechanism is demonstrated by a detailed transfer simulation. The observed prompt MeV radiation is taken as an input of the simulation; we use GRB 080916C as an example. The result reproduces the GeV flash observed by the Fermi telescope. It explains the delayed onset, the steep rise, the peak flux, the time of the peak, the long smooth decline, and the spectral slope of GeV emission. The wind density required to reproduce all these features is typical of Wolf-Rayet stars. Our simulation predicts strong TeV emission 1 minute after the burst trigger; then a cutoff in the observed high-energy spectrum is expected from absorption by extragalactic background light. In addition, a bright optical counterpart of the GeV flash is predicted for plausible values of the magnetic field; such a double (optical+GeV) flash has been observed in GRB 130427A.

  19. Bulk and surface half-metallicity: The case of D0{sub 3}-type Mn{sub 3}Ge

    SciTech Connect (OSTI)

    Liu, Hao; Gao, G. Y. Hu, Lei; Ni, Yun; Zu, Fengxia; Zhu, Sicong; Wang, Shuling; Yao, K. L.

    2014-01-21

    Motivated by the experimental realization of D0{sub 22}-type Mn{sub 3}Ge (001) films [Kurt et al. Appl. Phys. Lett. 101, 132410 (2012)] and the structural stability of D0{sub 3}-type Heusler alloy Mn{sub 3}Ge [Zhang et al. J. Phys.: Condens. Matter 25, 206006 (2013)], we use the first-principles calculations based on the full potential linearized augmented plane-wave method to investigate the electronic and magnetic properties of D0{sub 3}-type Heusler alloy Mn{sub 3}Ge and its (001) surface. We show that bulk D0{sub 3}-Mn{sub 3}Ge is a half-metallic ferromagnet with the minority-spin energy gap of 0.52 eV and the magnetic moment of 1.00 μ{sub B} per formula unit. The bulk half-metallicity is preserved at the pure Mn-terminated (001) surface due to the large exchange split, but the MnGe-terminated (001) surface destroys the bulk half-metallicity. We also reveal that the surface stabilities are comparable between the D0{sub 3}-Mn{sub 3}Ge (001) and the experimental D0{sub 22}-Mn{sub 3}Ge (001), which indicates the feasibility to grow the Mn{sub 3}Ge (001) films with D0{sub 3} phase other than D0{sub 22} one. The surface half-metallicity and stability make D0{sub 3}-Mn{sub 3}Ge a promising candidate for spintronic applications.

  20. Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1)

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect SciTech Connect Search Results Journal Article: Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1) Citation Details In-Document Search Title: Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1) In this paper we demonstrate evidence of a cluster spin glass in Tb117Fe52Ge113.8(1) (a compound with a giant cubic unit cell) via ac and dc magnetic susceptibility, magnetization, magnetic relaxation and heat capacity

  1. Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1)

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1) Citation Details In-Document Search Title: Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1) In this paper we demonstrate evidence of a cluster spin glass in Tb117Fe52Ge113.8(1) (a compound with a giant cubic unit cell) via ac and dc magnetic susceptibility, magnetization, magnetic relaxation and heat capacity measurements. The results clearly show

  2. Direct Evidence for Abrupt Postcrystallization Germanium Precipitation in Thin Phase-Change Films of Sb-15 at. % Ge

    SciTech Connect (OSTI)

    Cabral,C.; Krusin-Elbaum, L.; Bruley, J.; Raoux, S.; Deline, V.; Madan, A.; Pinto, T.

    2008-01-01

    We present evidence for the instability in the crystalline (metallic) state of binary Te-free phase-change Ge-Sb thin films considered for integration into nonvolatile nanosized memory cells. We find that while the amorphous (semiconducting) phase of eutectic Sb-15 at. % Ge is very robust until Sb crystallization at 240 C, at about 350 C, germanium rapidly precipitates out. Ge precipitation, visualized directly with transmission electron microscopy, is exothermic and is found to affect the films' reflectivity, resistance, and stress. It converts melting into a two-step process, which may seriously impact the switching reliability of a device.

  3. TUNL Ph.D. Degrees Theses

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    14C. Duke University, 1983, Supervisor: N.R. Roberson. Download PDF (1.23 MB) Steven E. King, Radiative Capture of Protons and Deuterons into 3He. Duke University, 1983,...

  4. Long-Term Measurements of Submicrometer Aerosol

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    non-refractory submicron particulate matter (NR-PM1) including organic aerosol (OA), sulfate (SO 4 2- ), nitrate (NO 3 - ), ammonium (NH 4 + ), and chloride (Cl-). In this study,...

  5. Microsoft Word - 2012 Research Day Winners.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    C-NR Marcus Weigand, MPA-CMMS Blake Sturtevant, MPA-11 Satish Karra, EES-16 Graham King, LANSCE-LC Eric Daub, EES-17T-CNLS Louise Evans, NEN-1 Benjamin Ueland, MPA-CMMS Yan...

  6. Pellet Zone Ltd | Open Energy Information

    Open Energy Info (EERE)

    Pellet Zone Ltd Jump to: navigation, search Name: Pellet Zone Ltd Place: England, United Kingdom Zip: NR19 1AE Sector: Biomass Product: UK based biomass pellet trading firm....

  7. PowerPoint Presentation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    James H. Clarke 1 , Allen G. Croff 1 , Lyndsey Fern Fyffe 1 , Michael Gochfeld 3 , Michael ... River Corridor 100-BC, 100-KR, 100-HR-3 (D&H) primarily chromium 100-NR (strontium-90) ...

  8. CX-005033: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Oil Cleanup in 100-NR-2CX(s) Applied: B6.1Date: 01/19/2011Location(s): Hanford, WashingtonOffice(s): Environmental Management, Office of River Protection-Richland Office

  9. Nauru: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    "","visitedicon":"" Country Profile Name Nauru Population 9,275 GDP Unavailable Energy Consumption 0.00 Quadrillion Btu 2-letter ISO code NR 3-letter ISO code NRU Numeric ISO...

  10. Wind Power Renewables | Open Energy Information

    Open Energy Info (EERE)

    Wind Power Renewables Place: Norfolk, United Kingdom Zip: NR29 5BG Sector: Wind energy Product: Wind project developer Coordinates: 36.846825, -76.285069 Show Map Loading...

  11. Scira Offshore Energy | Open Energy Information

    Open Energy Info (EERE)

    Kingdom Zip: NR32 1DE Sector: Wind energy Product: Developer of the Sheringham Shoals offshore wind farm. References: Scira Offshore Energy1 This article is a stub. You can...

  12. Infrastructure Security

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    waste to return of research reactor fuel of U.S. origin. In addition, Snl supports the nrC in the development of technical bases to support various rule-making activities...

  13. NREL Photoelectrode Research Advances Hydrogen Production Efforts...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    catalysts. Technical Contacts: Jing Gu, Jing.Gu@nrel.gov; John Turner, John.Turner@nrel.gov Reference: Gu, J.; Y. Yan; J.L. Young; K. Steirer; N.R. Neale; J.A. Turner....

  14. Microsoft Word - Participants_Web.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Day 2015 i Postdoc Participants Adamska, Lyudmyla T-1 Poster 003 Ahmed, Towfiq T-4 Poster 004 Barker, Beau C-NR Poster 005 Beedle, Christopher MPA-CMMS Poster 006 Bennett, ...

  15. Polarization of Lambda0 and anti-Lambda0 inclusively produced by 610-GeV/c Sigma- and 525-GeV/c proton beams

    SciTech Connect (OSTI)

    Sanchez-Lopez, J.L.; Nelson, K.D.; Engelfried, J.; Akgun, U.; Alkhazov, G.; Amaro-Reyes, J.; Atamantchouk, A.G.; Ayan, A.S.; Balatz, M.Y.; Blanco-Covarrubias, A.; Bondar, N.F.; /Ball State U. /Bogazici U. /Carnegie Mellon U. /Rio de Janeiro, CBPF /Fermilab /Serpukhov, IHEP /Beijing, Inst. High Energy Phys. /Moscow, ITEP /Heidelberg, Max Planck Inst. /Moscow State U. /St. Petersburg, INP

    2007-06-01

    We have measured the polarization of {Lambda}{sup 0} and {bar {Lambda}{sup 0}} inclusively produced by 610 GeV/c {Sigma}{sup -} and 525 GeV/c proton beams in the experiment SELEX during the 1996/7 fixed target run at Fermilab. The polarization was measured as a function of the {Lambda} longitudinal momentum fraction x{sub F} and transverse momentum p{sub t}. For the {Lambda}{sup 0} produced by {Sigma}{sup -} the polarization is increasing with x{sub F} , from slightly negative at x{sub F} {approx} 0 to about 15% at large x{sub F} ; it shows a non-monotonic behavior as a function of p{sub t}. For the proton beam, the {Lambda}{sup 0} polarization is negative and decreasing as a function of x{sub F} and p{sub t}. The {bar {Lambda}{sup 0}} polarization is compatible with 0 for both beam particles over the full kinematic range. The target dependence was examined but no statistically significant difference was found.

  16. N-type doping of Ge by As implantation and excimer laser annealing

    SciTech Connect (OSTI)

    Milazzo, R.; Napolitani, E. De Salvador, D.; Mastromatteo, M.; Carnera, A.; Impellizzeri, G.; Boninelli, S.; Priolo, F.; Privitera, V.; Fisicaro, G.; Italia, M.; La Magna, A.; Cuscun, M.; Fortunato, G.

    2014-02-07

    The diffusion and activation of arsenic implanted into germanium at 40?keV with maximum concentrations below and above the solid solubility (8??10{sup 19}?cm{sup ?3}) have been studied, both experimentally and theoretically, after excimer laser annealing (??=?308?nm) in the melting regime with different laser energy densities and single or multiple pulses. Arsenic is observed to diffuse similarly for different fluences with no out-diffusion and no formation of pile-up at the maximum melt depth. The diffusion profiles have been satisfactorily simulated by assuming two diffusivity states of As in the molten Ge and a non-equilibrium segregation at the maximum melt depth. The electrical activation is partial and decreases with increasing the chemical concentration with a saturation of the active concentration at 1??10{sup 20}?cm{sup ?3}, which represents a new record for the As-doped Ge system.

  17. GeV-scale dark matter: Production at the main injector

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dobrescu, Bogdan A.; Frugiuele, Claudia

    2015-02-03

    In this study, assuming that dark matter particles interact with quarks via a GeV-scale mediator, we study dark matter production in fixed target collisions. The ensuing signal in a neutrino near detector consists of neutral-current events with an energy distribution peaked at higher values than the neutrino background. We find that for a Z' boson of mass around a few GeV that decays to dark matter particles, the dark matter beam produced by the Main Injector at Fermilab allows the exploration of a range of values for the gauge coupling that currently satisfy all experimental constraints. The NOνA near detectormore » is well positioned for probing the presence of a dark matter beam, and future LBNF near detectors would provide more sensitive probes.« less

  18. SRF CAVITY PERFORMANCE OVERVIEW FOR THE 12 GeV UPGRADE

    SciTech Connect (OSTI)

    A. Burrill, G.K. Davis, C.E. Reece, A.V. Reilly, M. Stirbet

    2012-07-01

    The CEBAF accelerator, a recirculating CW electron accelerator that is currently operating at Jefferson Laboratory, is in the process of having 10 new cryomodules installed to allow for the maximum beam energy to be increased from 6 GeV to 12 GeV. This upgrade required the fabrication, processing and RF qualification of 80, seven cell elliptical SRF cavities, a process that was completed in February 2012. The RF performance achieve in the vertical testing dewars has exceeded the design specification by {approx}25% and is a testament to the cavity design and processing cycle that has been implemented. This paper will provide a summary of the cavity RF performance in the vertical tests, as well as review the overall cavity processing cycle and duration for the project.

  19. Coalescing at 8 GeV in the Fermilab Main Injector

    SciTech Connect (OSTI)

    Scott, D.J.; Capista, D.; Chase, B.; Dye, J.; Kourbanis, I.; Seiya, K.; Yang, M.-J.; /Fermilab

    2012-05-01

    For Project X, it is planned to inject a beam of 3 10{sup 11} particles per bunch into the Main Injector. To prepare for this by studying the effects of higher intensity bunches in the Main Injector it is necessary to perform coalescing at 8 GeV. The results of a series of experiments and simulations of 8 GeV coalescing are presented. To increase the coalescing efficiency adiabatic reduction of the 53 MHz RF is required. This results in {approx}70% coalescing efficiency of 5 initial bunches. Data using wall current monitors has been taken to compare previous work and new simulations for 53 MHz RF reduction, bunch rotations and coalescing, good agreement between experiment and simulation was found. By increasing the number of bunches to 7 and compressing the bunch energy spread a scheme generating approximately 3 10{sup 11} particles in a bunch has been achieved. These bunches will then be used in further investigations.

  20. Half-metallic ferromagnetism in Cr-doped semiconducting Ge-chalcogenide: Density functional approach

    SciTech Connect (OSTI)

    Saini, Hardev S.; Singh, Mukhtiyar; Thakur, Jyoti; Kashyap, Manish K.

    2014-04-24

    A supercell approach has been used to calculate the electronic and magnetic properties of Cr-doped Ge chalcogenide, Ge{sub 1−x}Cr{sub x}Te (x = 0.25 and 0.125). The calculations have been performed using full potential Linear Augmented Plane Wave (FPLAPW) method within generalized gradient approximation (GGA) as exchange-correlation (XC) potential. The calculated results show that the doping of Cr induces the 100% spin polarization at Fermi level (EF) and showed the robust half metallic ferromagnetism in this compound. Thus, the compound at both dopant concentrations behave as dilute magnetic semiconductor (DMS) showing metallic property in majority and semiconducting for minority spin channels which is best suited for spintronic applications. The total magnetic moments of this compound are mainly due to Cr-d states present at E{sup F} with negligible contribution from electronic states of other atoms.