National Library of Energy BETA

Sample records for nitride ingan samples

  1. Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device

    SciTech Connect (OSTI)

    Kim, Jaehwan; Min, Daehong; Jang, Jongjin; Lee, Kyuseung; Chae, Sooryong; Nam, Okhyun, E-mail: ohnam@kpu.ac.kr [Advanced Photonics Research Center/LED Technology Center, Department of Nano-Optical Engineering, Korea Polytechnic University, 237, Sangidaehak-ro, Siheung-si, Gyeonggi-do 429-793 (Korea, Republic of)

    2014-10-28

    In this study, the properties of thick stress-relaxed (11–22) semipolar InGaN layers were investigated. Owing to the inclination of growth orientation, misfit dislocations (MDs) occurred at the heterointerface when the strain state of the (11–22) semipolar InGaN layers reached the critical point. We found that unlike InGaN layers based on polar and nonpolar growth orientations, the surface morphologies of the stress-relaxed (11–22) semipolar InGaN layers did not differ from each other and were similar to the morphology of the underlying GaN layer. In addition, misfit strain across the whole InGaN layer was gradually relaxed by MD formation at the heterointerface. To minimize the effect of surface roughness and defects in GaN layers on the InGaN layer, we conducted further investigation on a thick (11–22) semipolar InGaN layer grown on an epitaxial lateral overgrown GaN template. We found that the lateral indium composition across the whole stress-relaxed InGaN layer was almost uniform. Therefore, thick stress-relaxed (11–22) semipolar InGaN layers are suitable candidates for use as underlying layers in long-wavelength devices, as they can be used to control strain accumulation in the heterostructure active region without additional influence of surface roughness.

  2. Observations of Rabi oscillations in a non-polar InGaN quantum dot

    E-Print Network [OSTI]

    Reid, Benjamin P. L.; Kocher, Claudius; Zhu, Tongtong; Oehler, Fabrice; Emery, Robert; Chan, Christopher C. S.; Oliver, Rachel A.; Taylor, Robert A.

    2014-07-03

    . A pattern of such apertures was sufficient to enable optical isolation of single quantum dots. The samples were mounted in a continuous helium flow cryostat (Janis ST-500) with a feedback loop temperature controller (Lakeshore 331) enabling cooling... to sustain excitonic emission at high temperatures, evidenced by single photon emission at 200K from InGaN [8] and at 300K from GaN quantum dots [9]. Demonstration of coherent control of quantum dot qubit states in the III-nitride system has been hampered...

  3. Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

    E-Print Network [OSTI]

    Gilchrist, James F.

    Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes Keywords: III-Nitride InGaN QWs Light-emitting diodes Efficiency-droop a b s t r a c t Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well (QW) based light-emitting diodes

  4. IIl-nitride nanowires and heterostructures : growth and optical properties on nanoscale

    E-Print Network [OSTI]

    Zhou, Xiang, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    Gallium nitride (GaN) and indium gallium nitride (InGaN) nanowires promise potential for further improving the electricity-to-light energy conversion efficiencies in light emitting diodes due to strain relaxation, reduced ...

  5. Low Cost Production of InGaN for Next-Generation Photovoltaic Devices

    SciTech Connect (OSTI)

    Nick M. Sbrockey, Shangzhu Sun, Gary S. Tompa,

    2012-07-09

    The goal of this project is to develop a low-cost and low-energy technology for production of photovoltaic devices based on InGaN materials. This project builds on the ongoing development by Structured Materials Industries (SMI), of novel thin film deposition technology for Group III-Nitride materials, which is capable of depositing Group-III nitride materials at significantly lower costs and significantly lower energy usage compared to conventional deposition techniques. During this project, SMI demonstrated deposition of GaN and InGaN films using metalorganic sources, and demonstrated compatibility of the process with standard substrate materials and hardware components.

  6. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

    SciTech Connect (OSTI)

    Sundaram, S.; El Gmili, Y.; Bonanno, P. L. [CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Puybaret, R.; Li, X.; Voss, P. L.; Ougazzaden, A. [Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Pantzas, K.; Patriarche, G. [CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis (France); Orsal, G.; Salvestrini, J. P., E-mail: salvestr@metz.supelec.fr [Université de Lorraine, Supélec, LMOPS, EA4423, 57070 Metz (France); Troadec, D. [Université des Sciences et Technologies de Lille, CNRS, UMR 8520 IEMN, 59000 Lille (France); Cai, Z.-H. [Advanced Photon Source, 9700 S. Cass Avenue, Argonne, Illinois 60439 (United States)

    2014-10-28

    Uniform, dense, single-phase, 150?nm thick indium gallium nitride (InGaN) nanostructure (nanorods and nanostripes) arrays have been obtained on gallium nitride templates, by metal organic chemical vapor deposition and nanoscale selective area growth on silicon dioxide patterned masks. The 150?nm thick InGaN nanorods have a perfect hexagonal pyramid shape with relatively homogenous indium concentration up to 22%, which is almost twice as high as in planar InGaN grown in the same condition, and luminesce at 535?nm. InGaN nanostripes feature c-axis oriented InGaN in the core which is covered by InGaN grown along semi-polar facets with higher In content. Transmission electron microscope and sub micron beam X-rays diffraction investigations confirm that both InGaN nanostructures are mostly defect free and monocrystalline. The ability to grow defect-free thick InGaN nanostructures with reduced polarization and high indium incorporation offers a solution to develop high efficiency InGaN-based solar cells.

  7. Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis

    SciTech Connect (OSTI)

    Dahal, R.; Pantha, B. N.; Li, J.; Lin, J. Y.; Jiang, H. X., E-mail: hx.jiang@ttu.edu [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2014-04-07

    InGaN alloys are very promising for solar water splitting because they have direct bandgaps that cover almost the whole solar spectrum. The demonstration of direct solar-to-fuel conversion without external bias with the sunlight being the only energy input would pave the way for realizing photoelectrochemical (PEC) production of hydrogen by using InGaN. A monolithic solar-PEC cell based on InGaN/GaN multiple quantum wells capable to directly generate hydrogen gas under zero bias via solar water splitting is reported. Under the irradiation by a simulated sunlight (1-sun with 100 mW/cm{sup 2}), a 1.5% solar-to-fuel conversion efficiency has been achieved under zero bias, setting a fresh benchmark of employing III-nitrides for artificial photosynthesis. Time dependent hydrogen gas production photocurrent measured over a prolonged period (measured for 7 days) revealed an excellent chemical stability of InGaN in aqueous solution of hydrobromic acid. The results provide insights into the architecture design of using InGaN for artificial photosynthesis to provide usable clean fuel (hydrogen gas) with the sunlight being the only energy input.

  8. Design of Integrated III-Nitride/Non-III-Nitride Tandem Photovoltaic Devices

    SciTech Connect (OSTI)

    Toledo, N. G.; Friedman, D.J.; Farrell, R. M.; Perl, E. E.; Lin, C. T.; Bowers, J. E.; Speck, J. S.; Mishra, U. K.

    2012-03-01

    The integration of III-nitride and non-III-nitride materials for tandem solar cell applications can improve the efficiency of the photovoltaic device due to the added power contributed by the III-nitride top cell to that of high-efficiency multi-junction non-III-nitride solar cells if the device components are properly designed and optimized. The proposed tandem solar cell is comprised of a III-nitride top cell bonded to a non-III-nitride, series-constrained, multi-junction subcell. The top cell is electrically isolated, but optically coupled to the underlying subcell. The use of a III-nitride top cell is potentially beneficial when the top junction of a stand-alone non-III-nitride subcell generates more photocurrent than the limiting current of the non-III-nitride subcell. Light producing this excess current can either be redirected to the III-nitride top cell through high energy photon absorption, redirected to the lower junctions through layer thickness optimization, or a combination of both, resulting in improved total efficiency. When the non-III-nitride cell's top junction is the limiting junction, the minimum power conversion efficiency that the III-nitride top cell must contribute should compensate for the spectrum filtered from the multi-junction subcell for this design to be useful. As the III-nitride absorption edge wavelength, {lambda}{sub N}, increases, the performance of the multi-junction subcell decreases due to spectral filtering. In the most common spectra of interest (AM1.5G, AM1.5 D, and AM0), the technology to grow InGaN cells with {lambda}{sub N}<520 nm is found to be sufficient for III-nitride top cell applications. The external quantum efficiency performance, however, of state-of-the-art InGaN solar cells still needs to be improved. The effects of surface/interface reflections are also presented. The management of these reflection issues determines the feasibility of the integrated III-nitride/non-III-nitride design to improve overall cell efficiency.

  9. Nitride fuel performance 

    E-Print Network [OSTI]

    Reynaud, Sylvie Marie Aurel?ie

    2002-01-01

    The purpose of this work was to assess the potential of nitride fuels in the current context of the nuclear industry. Nitride fuels systems have indeed been for the past decade the subject of new interest from the international community...

  10. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOE Patents [OSTI]

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-07-04

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

  11. Superconducting structure with layers of niobium nitride and aluminum nitride

    DOE Patents [OSTI]

    Murduck, James M. (Lisle, IL); Lepetre, Yves J. (Lauris, FR); Schuller, Ivan K. (Woodridge, IL); Ketterson, John B. (Evanston, IL)

    1989-01-01

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

  12. Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes

    SciTech Connect (OSTI)

    Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

    2014-10-27

    The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

  13. Failure of silicon nitride under uniaxial compression at high temperature

    E-Print Network [OSTI]

    Gei, Massimiliano

    nitride cylinders have been investigated under uniaxial compression at 1200 °C in air. Samples has been carried out in order to de- scribe the onset of the specific failure mode. The first failure

  14. Boron nitride nanotubes

    DOE Patents [OSTI]

    Smith, Michael W. (Newport News, VA); Jordan, Kevin (Newport News, VA); Park, Cheol (Yorktown, VA)

    2012-06-06

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  15. Cubic nitride templates

    DOE Patents [OSTI]

    Burrell, Anthony K; McCleskey, Thomas Mark; Jia, Quanxi; Mueller, Alexander H; Luo, Hongmei

    2013-04-30

    A polymer-assisted deposition process for deposition of epitaxial cubic metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be used as templates for the development of high quality cubic GaN based electronic devices.

  16. Nitride semiconductor Surface and interface characterization and device design

    E-Print Network [OSTI]

    Zhang, Hongtao

    2006-01-01

    piezoelectric polarization effects in nitride heterostructures," in III-V Nitride Semiconductors: Applications

  17. Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a

    E-Print Network [OSTI]

    Okamoto, Koichi

    is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

  18. Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes

    SciTech Connect (OSTI)

    Tansu, Nelson; Dierolf, Volkmar; Huang, Gensheng; Penn, Samson; Zhao, Hongping; Liu, Guangyu; Li, Xiaohang; Poplawsky, Jonathan

    2011-07-14

    The technology on the large overlap InGaN QWs developed in this program is currently implemented in commercial technology in enhancing the internal quantum efficiency in major LED industry in US and Asia. The scientific finding from this work supported by the DOE enabled the implementation of this step-like staggered quantum well in the commercial LEDs.

  19. Sandia Energy - III-Nitride Nanowires

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    III-Nitride Nanowires Home Energy Research EFRCs Solid-State Lighting Science EFRC III-Nitride Nanowires III-Nitride NanowiresTara Camacho-Lopez2015-03-25T21:58:18+00:00...

  20. Superplastic forging nitride ceramics

    DOE Patents [OSTI]

    Panda, Prakash C. (Ithaca, NY); Seydel, Edgar R. (Ithaca, NY); Raj, Rishi (Ithaca, NY)

    1988-03-22

    The invention relates to producing relatively flaw free silicon nitride ceramic shapes requiring little or no machining by superplastic forging This invention herein was made in part under Department of Energy Grant DE-AC01-84ER80167, creating certain rights in the United States Government. The invention was also made in part under New York State Science and Technology Grant SB1R 1985-10.

  1. Comparative study of polar and semipolar (112?2) InGaN layers grown by metalorganic vapour phase epitaxy

    SciTech Connect (OSTI)

    Dinh, Duc V. E-mail: peter.parbrook@tyndall.ie; Zubialevich, V. Z.; Oehler, F.; Kappers, M. J.; Humphreys, C. J.; Alam, S. N.; Parbrook, P. J. E-mail: peter.parbrook@tyndall.ie; Caliebe, M.; Scholtz, F.

    2014-10-21

    InGaN layers were grown simultaneously on (112?2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (?750°C), the indium content (<15%) of the (112?2) and (0001) InGaN layers was similar. However, for temperatures less than 750°C, the indium content of the (112?2) InGaN layers (15%–26%) were generally lower than those with (0001) orientation (15%–32%). The compositional deviation was attributed to the different strain relaxations between the (112?2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112?2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112?2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ?(50–60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.

  2. Electrochemical nitridation of metal surfaces

    DOE Patents [OSTI]

    Wang, Heli; Turner, John A.

    2015-06-30

    Electrochemical nitridation of metals and the produced metals are disclosed. An exemplary method of electrochemical nitridation of metals comprises providing an electrochemical solution at low temperature. The method also comprises providing a three-electrode potentiostat system. The method also comprises stabilizing the three-electrode potentiostat system at open circuit potential. The method also comprises applying a cathodic potential to a metal.

  3. Functionalized boron nitride nanotubes

    DOE Patents [OSTI]

    Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

    2014-04-22

    A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

  4. Photoelectrochemical water splitting and hydrogen generation by a spontaneously formed InGaN nanowall network

    SciTech Connect (OSTI)

    Alvi, N. H., E-mail: nhalvi@isom.upm.es, E-mail: r.noetzel@isom.upm.es; Soto Rodriguez, P. E. D.; Kumar, Praveen; Gómez, V. J.; Aseev, P.; Nötzel, R., E-mail: nhalvi@isom.upm.es, E-mail: r.noetzel@isom.upm.es [ISOM Institute for Systems Based on Optoelectronics and Microtechnology, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Alvi, A. H. [Department of Physics, Government College University, Faisalabad (Pakistan); Alvi, M. A. [Department of Chemistry, Government College University, Faisalabad (Pakistan); Willander, M. [Department of Science and Technology (ITN), Campus Norrköping, Linköping University, 60174 Norrköping (Sweden)

    2014-06-02

    We investigate photoelectrochemical water splitting by a spontaneously formed In-rich InGaN nanowall network, combining the material of choice with the advantages of surface texturing for light harvesting by light scattering. The current density for the InGaN-nanowalls-photoelectrode at zero voltage versus the Ag/AgCl reference electrode is 3.4?mA cm{sup ?2} with an incident-photon-to-current-conversion efficiency (IPCE) of 16% under 350?nm laser illumination with 0.075?W·cm{sup ?2} power density. In comparison, the current density for a planar InGaN-layer-photoelectrode is 2?mA cm{sup ?2} with IPCE of 9% at zero voltage versus the Ag/AgCl reference electrode. The H{sub 2} generation rates at zero externally applied voltage versus the Pt counter electrode per illuminated area are 2.8 and 1.61??mol·h{sup ?1}·cm{sup ?2} for the InGaN nanowalls and InGaN layer, respectively, revealing ?57% enhancement for the nanowalls.

  5. Cordierite silicon nitride filters

    SciTech Connect (OSTI)

    Sawyer, J.; Buchan, B. ); Duiven, R.; Berger, M. ); Cleveland, J.; Ferri, J. )

    1992-02-01

    The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

  6. Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays

    E-Print Network [OSTI]

    Gilchrist, James F.

    in the Fresnel reflection. Improvement of output power by 219% for InGaN quantum wells LEDs emitting at peakGaN quantum wells light emitting diodes LEDs using SiO2/polystyrene microspheres was demonstrated experimentally. The utilization of SiO2/polystyrene microlens arrays on InGaN quantum wells LEDs, deposited via

  7. Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using Si O 2 /polystyrene microlens arrays

    E-Print Network [OSTI]

    Gilchrist, James F.

    November 2007 Improvement of light extraction efficiency of InGaN quantum wells light emitting diodes LEDs microlens arrays on InGaN quantum wells LEDs, deposited via rapid convective deposition, allows the increase of the effective photon escape cone and reduction in the Fresnel reflection. Improvement of output power by 219

  8. Hard carbon nitride and method for preparing same

    DOE Patents [OSTI]

    Haller, Eugene E. (Berkeley, CA); Cohen, Marvin L. (Berkeley, CA); Hansen, William L. (Walnut Creek, CA)

    1992-01-01

    Novel crystalline .alpha. (silicon nitride-like)-carbon nitride and .beta. (silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate.

  9. Method for producing refractory nitrides

    DOE Patents [OSTI]

    Quinby, Thomas C. (Kingston, TN)

    1989-01-24

    A process for making fine, uniform metal nitride powders that can be hot pressed or sintered. A metal salt is placed in a solvent with Melamine and warmed until a metal-Melamine compound forms. The solution is cooled and the metal-Melamine precipitate is calcined at a temperature below 700.degree. C. to form the metal nitrides and to avoid formation of the metal oxide.

  10. Superplastic forging nitride ceramics

    DOE Patents [OSTI]

    Panda, P.C.; Seydel, E.R.; Raj, R.

    1988-03-22

    A process is disclosed for preparing silicon nitride ceramic parts which are relatively flaw free and which need little or no machining, said process comprising the steps of: (a) preparing a starting powder by wet or dry mixing ingredients comprising by weight from about 70% to about 99% silicon nitride, from about 1% to about 30% of liquid phase forming additive and from 1% to about 7% free silicon; (b) cold pressing to obtain a preform of green density ranging from about 30% to about 75% of theoretical density; (c) sintering at atmospheric pressure in a nitrogen atmosphere at a temperature ranging from about 1,400 C to about 2,200 C to obtain a density which ranges from about 50% to about 100% of theoretical density and which is higher than said preform green density, and (d) press forging workpiece resulting from step (c) by isothermally uniaxially pressing said workpiece in an open die without initial contact between said workpiece and die wall perpendicular to the direction of pressing and so that pressed workpiece does not contact die wall perpendicular to the direction of pressing, to substantially final shape in a nitrogen atmosphere utilizing a temperature within the range of from about 1,400 C to essentially 1,750 C and strain rate within the range of about 10[sup [minus]7] to about 10[sup [minus]1] seconds[sup [minus]1], the temperature and strain rate being such that surface cracks do not occur, said pressing being carried out to obtain a shear deformation greater than 30% whereby superplastic forging is effected.

  11. Structural studies of magnesium nitride fluorides by powder neutron diffraction

    SciTech Connect (OSTI)

    Brogan, Michael A.; Hughes, Robert W.; Smith, Ronald I.; Gregory, Duncan H.

    2012-01-15

    Samples of ternary nitride fluorides, Mg{sub 3}NF{sub 3} and Mg{sub 2}NF have been prepared by solid state reaction of Mg{sub 3}N{sub 2} and MgF{sub 2} at 1323-1423 K and investigated by powder X-ray and powder neutron diffraction techniques. Mg{sub 3}NF{sub 3} is cubic (space group: Pm3m) and has a structure related to rock-salt MgO, but with one cation site vacant. Mg{sub 2}NF is tetragonal (space group: I4{sub 1}/amd) and has an anti-LiFeO{sub 2} related structure. Both compounds are essentially ionic and form structures in which nitride and fluoride anions are crystallographically ordered. The nitride fluorides show temperature independent paramagnetic behaviour between 5 and 300 K. - Graphical abstract: Definitive structures of the ternary magnesium nitride fluorides Mg{sub 3}NF{sub 3} and the lower temperature polymorph of Mg{sub 2}NF have been determined from powder neutron diffraction data. The nitride halides are essentially ionic and exhibit weak temperature independent paramagnetic behaviour. Highlights: Black-Right-Pointing-Pointer Definitive structures of Mg{sub 3}NF{sub 3} and Mg{sub 2}NF were determined by neutron diffraction. Black-Right-Pointing-Pointer Nitride and fluoride anions are crystallographically ordered in both structures. Black-Right-Pointing-Pointer Both compounds exhibit weak, temperature independent paramagnetic behaviour. Black-Right-Pointing-Pointer The compounds are essentially ionic with ionicity increasing with F{sup -} content.

  12. Process for making transition metal nitride whiskers

    DOE Patents [OSTI]

    Bamberger, C.E.

    1988-04-12

    A process for making metal nitrides, particularly titanium nitride whiskers, using a cyanide salt as a reducing agent for a metal compound in the presence of an alkali metal oxide. Sodium cyanide, various titanates and titanium oxide mixed with sodium oxide react to provide titanium nitride whiskers that can be used as reinforcement to ceramic composites. 1 fig., 1 tab.

  13. Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model

    SciTech Connect (OSTI)

    Chow, Weng W.; Crawford, Mary H.; Tsao, Jeffrey Y.; Kneissl, Michael

    2010-01-01

    We propose a model to better investigate InGaN light-emitting diode (LED) internal efficiency by extending beyond the usual total carrier density rate equation approach. To illustrate its capability, the model is applied to study intrinsic performance differences between violet and green LEDs. The simulations show performance differences, at different current densities and temperatures, arising from variations in spontaneous emission and heat loss rates. By tracking the momentum-resolved carrier populations, these rate changes are, in turn, traced to differences in bandstructure and plasma heating. The latter leads to carrier distributions that deviate from the quasiequilibrium ones at lattice temperature.

  14. Investigation into nitrided spur gears

    SciTech Connect (OSTI)

    Yilbas, B.S.; Coban, A.; Nickel, J.; Sunar, M.; Sami, M.; Abdul Aleem, B.J. [King Fahd Univ. of Petroleum and Minerals, Dhahran (Saudi Arabia)

    1996-12-01

    The cold forging method has been widely used in industry to produce machine parts. In general, gears are produced by shaping or hobbing. One of the shaping techniques is precision forging, which has several advantages over hobbing. In the present study, cold forging of spur gears from Ti-6Al-4V material is introduced. To improve the surface properties of the resulting gears, plasma nitriding was carried out. Nuclear reaction analysis was carried out to obtain the nitrogen concentration, while the micro-PIXE technique was used to determine the elemental distribution in the matrix after forging and nitriding processes. Scanning electron microscopy and x-ray powder diffraction were used to investigate the metallurgical changes and formation of nitride components in the surface region. Microhardness and friction tests were carried out to measure the hardness depth profile and friction coefficient at the surface. Finally, scoring failure tests were conducted to determine the rotational speed at which the gears failed. Three distinct regions were obtained in the nitride region, and at the initial stages of the scoring tests, failure in surface roughness was observed in the vicinity of the tip of the gear tooth. This occurred at a particular rotational speed and work input.

  15. The Hardest Superconducting Metal Nitride

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Shanmin; Antonio, Daniel; Yu, Xiaohui; Zhang, Jianzhong; Cornelius, Andrew L.; He, Duanwei; Zhao, Yusheng

    2015-09-03

    Transition–metal (TM) nitrides are a class of compounds with a wide range of properties and applications. Hard superconducting nitrides are of particular interest for electronic applications under working conditions such as coating and high stress (e.g., electromechanical systems). However, most of the known TM nitrides crystallize in the rock–salt structure, a structure that is unfavorable to resist shear strain, and they exhibit relatively low indentation hardness, typically in the range of 10–20?GPa. Here, we report high–pressure synthesis of hexagonal ?–MoN and cubic ?–MoN through an ion–exchange reaction at 3.5?GPa. The final products are in the bulk form with crystallite sizesmore »of 50 – 80??m. Based on indentation testing on single crystals, hexagonal ?–MoN exhibits excellent hardness of ~30?GPa, which is 30% higher than cubic ?–MoN (~23?GPa) and is so far the hardest among the known metal nitrides. The hardness enhancement in hexagonal phase is attributed to extended covalently bonded Mo–N network than that in cubic phase. The measured superconducting transition temperatures for ?–MoN and cubic ?–MoN are 13.8 and 5.5?K, respectively, in good agreement with previous measurements.« less

  16. P-type gallium nitride

    DOE Patents [OSTI]

    Rubin, Michael (Berkeley, CA); Newman, Nathan (Montara, CA); Fu, Tracy (Berkeley, CA); Ross, Jennifer (Pleasanton, CA); Chan, James (Berkeley, CA)

    1997-01-01

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  17. P-type gallium nitride

    DOE Patents [OSTI]

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  18. The Hardest Superconducting Metal Nitride

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Shanmin; Antonio, Daniel; Yu, Xiaohui; Zhang, Jianzhong; Cornelius, Andrew L.; He, Duanwei; Zhao, Yusheng

    2015-09-03

    Transition–metal (TM) nitrides are a class of compounds with a wide range of properties and applications. Hard superconducting nitrides are of particular interest for electronic applications under working conditions such as coating and high stress (e.g., electromechanical systems). However, most of the known TM nitrides crystallize in the rock–salt structure, a structure that is unfavorable to resist shear strain, and they exhibit relatively low indentation hardness, typically in the range of 10–20 GPa. Here, we report high–pressure synthesis of hexagonal ?–MoN and cubic ?–MoN through an ion–exchange reaction at 3.5 GPa. The final products are in the bulk form withmore »crystallite sizes of 50 – 80 ?m. Based on indentation testing on single crystals, hexagonal ?–MoN exhibits excellent hardness of ~30 GPa, which is 30% higher than cubic ?–MoN (~23 GPa) and is so far the hardest among the known metal nitrides. The hardness enhancement in hexagonal phase is attributed to extended covalently bonded Mo–N network than that in cubic phase. The measured superconducting transition temperatures for ?–MoN and cubic ?–MoN are 13.8 and 5.5 K, respectively, in good agreement with previous measurements.« less

  19. Downloaded 07 Feb 2012 to 128.180.65.141. Redistribution subject to AIP license or copyright; see http://jap.aip.org/about/rights_and_permissions Improvement in spontaneous emission rates for InGaN quantum

    E-Print Network [OSTI]

    Gilchrist, James F.

    ) The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary In compared with those of InGaN QWs on GaN templates. For green- and red-emitting InGaN QWs on In0.15Ga0.85N with enhanced spontaneous emission rates, as well as reduced compressive strain, applicable for green- and red

  20. Nitride based quantum well light-emitting devices having improved current injection efficiency

    DOE Patents [OSTI]

    Tansu, Nelson; Zhao, Hongping; Liu, Guangyu; Arif, Ronald

    2014-12-09

    A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 .ANG. and 24 .ANG. thick, respectively.

  1. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate Presenter: Arpan Chakraborty, Soraa Inc. This...

  2. Design and Implementation of Silicon Nitride Valves for Heavy...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Implementation of Silicon Nitride Valves for Heavy Duty Diesel Engines Design and Implementation of Silicon Nitride Valves for Heavy Duty Diesel Engines Poster presentation at the...

  3. Boron nitride ablation studies in arc jet facilities (Conference...

    Office of Scientific and Technical Information (OSTI)

    Boron nitride ablation studies in arc jet facilities Citation Details In-Document Search Title: Boron nitride ablation studies in arc jet facilities You are accessing a document...

  4. Improved InGaN epitaxy yield by precise temperature measurement :yearly report 1.

    SciTech Connect (OSTI)

    Koleske, Daniel David; Creighton, James Randall; Russell, Michael J.; Fischer, Arthur Joseph

    2006-08-01

    This Report summarizes the first year progress (October 1, 2004 to September 30, 2005) made under a NETL funded project entitled ''Improved InGaN Epitaxy Yield by Precise Temperature Measurement''. This Project addresses the production of efficient green LEDs, which are currently the least efficient of the primary colors. The Project Goals are to advance IR and UV-violet pyrometry to include real time corrections for surface emissivity on multiwafer MOCVD reactors. Increasing wafer yield would dramatically reduce high brightness LED costs and accelerate the commercial manufacture of inexpensive white light LEDs with very high color quality. This work draws upon and extends our previous research (funded by DOE) that developed emissivity correcting pyrometers (ECP) based on the high-temperature GaN opacity near 400 nm (the ultraviolet-violet range, or UVV), and the sapphire opacity in the mid-IR (MIR) near 7.5 microns.

  5. Nanostructure, Chemistry and Crystallography of Iron Nitride...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Nanostructure, Chemistry and Crystallography of Iron Nitride Magnetic Materials by Ultra-High-Resolution Electron Microscopy and Related Methods Nanostructure, Chemistry and...

  6. Neutron detection using boron gallium nitride semiconductor material

    SciTech Connect (OSTI)

    Atsumi, Katsuhiro [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Inoue, Yoku; Nakano, Takayuki, E-mail: ttnakan@ipc.shizuoka.ac.jp [Department of Electrical and Materials Science, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Mimura, Hidenori; Aoki, Toru [Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)

    2014-03-01

    In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to ?-rays but poor sensitivity to ?-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after ?-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

  7. Finite element simulations of compositionally graded InGaN solar cells G.F. Brown a,b,n

    E-Print Network [OSTI]

    Wu, Junqiao

    for cheap multi-junction solar cells [4]. Previous simulations have shown that double-junction InxGa1ÀxFinite element simulations of compositionally graded InGaN solar cells G.F. Brown a,b,n , J.W. Ager conversion efficiency of compositionally graded InxGa1ÀxN solar cells was simulated using a finite element

  8. Method of preparation of uranium nitride

    DOE Patents [OSTI]

    Kiplinger, Jaqueline Loetsch; Thomson, Robert Kenneth James

    2013-07-09

    Method for producing terminal uranium nitride complexes comprising providing a suitable starting material comprising uranium; oxidizing the starting material with a suitable oxidant to produce one or more uranium(IV)-azide complexes; and, sufficiently irradiating the uranium(IV)-azide complexes to produce the terminal uranium nitride complexes.

  9. Hard carbon nitride and method for preparing same

    DOE Patents [OSTI]

    Haller, E.E.; Cohen, M.L.; Hansen, W.L.

    1992-05-05

    Novel crystalline [alpha](silicon nitride-like)-carbon nitride and [beta](silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate. 1 figure.

  10. Boron nitride ablation studies in arc jet facilities (Conference...

    Office of Scientific and Technical Information (OSTI)

    NITRIDES; NITROGEN COMPOUNDS; OPENINGS; PNICTIDES; SPACE VEHICLES 360205* -- Ceramics, Cermets, & Refractories-- Corrosion & Erosion; 320201 -- Energy Conservation,...

  11. Boron Nitride Nanoribbons Becomes Metallic

    SciTech Connect (OSTI)

    Huang, Jingsong [ORNL; Terrones Maldonado, Humberto [ORNL; Sumpter, Bobby G [ORNL; Lopez-Benzanilla, Alejandro [Oak Ridge National Laboratory (ORNL)

    2011-01-01

    Standard spin-polarized density functional theory calculations have been conducted to study the electronic structures and magnetic properties of O and S functionalized zigzag boron nitride nanoribbons (zBNNRs). Unlike the semiconducting and nonmagnetic H edge-terminated zBNNRs, the O edge-terminated zBNNRs have two energetically degenerate magnetic ground states with a ferrimagnetic character on the B edge, both of which are metallic. In contrast, the S edge-terminated zBNNRs are nonmagnetic albeit still metallic. An intriguing coexistence of two different Peierls-like distortions is observed for S edge-termination that manifests as a strong S dimerization at the B zigzag edge and a weak S trimerization at the N zigzag edge, dictated by the band fillings at the vicinity of the Fermi level. Nevertheless, metallicity is retained along the S wire on theNedge due to the partial filling of the band derived from the pz orbital of S. A second type of functionalization with O or S atoms embedded in the center of zBNNRs yields semiconducting features. Detailed examination of both types of functionalized zBNNRs reveals that the p orbitals on O or S play a crucial role in mediating the electronic structures of the ribbons.We suggest that O and S functionalization of zBNNRs may open new routes toward practical electronic devices based on boron nitride materials.

  12. Empirical modeling of uranium nitride fuels 

    E-Print Network [OSTI]

    Brozak, Daniel Edward

    1987-01-01

    of this work was to develop an irradiation performance data base for nitride fuels and to provide empirical modeling capabilities for fuel swelling and fission gas release in nitride fuels. The nitride fuels data base represents the most extensive effort... the formation of a empirical fit based upon consistent data. The forms of the recommended correlations for fuel swelling and fission gas release are shown on the following page; AV/V = a(Tb) (BUc)(FDd) (SDe) FGR = a(T )(BU )(FD ) where: AV/V FGR T BU FD...

  13. Supplemental Materials: Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices

    E-Print Network [OSTI]

    Goldhaber-Gordon, David

    Supplemental Materials: Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices Andrei G-mail: ag254@stanford.edu; goldhaber-gordon@stanford.edu We discuss in greater detail the sample preparation procedure and transport measure- ments of our graphene/h-BN devices. Flakes of h-BN were produced

  14. Cubic boron nitride: a new prospective material for ultracold neutron application

    E-Print Network [OSTI]

    Yu. Sobolev; Th. Lauer; Yu. Borisov; M. Daum; N. du Fresne; L. Goeltl; G. Hampel; W. Heil; A. Knecht; M. Keunecke; J. V. Kratz; T. Lang; M. Meister; Ch. Plonka-Spehr; Yu. Pokotilovski; P. Reichert; U. Schmidt; Th. Krist; N. Wiehl; J. Zenner

    2009-01-11

    For the first time, the neutron optical wall-potential of natural cubic boron nitride (cBN) was measured at the ultracold neutron (UCN) source of the research reactor TRIGA Mainz using the time-of-flight method (TOF). The samples investigated had a wall-potential of (305 +/- 15) neV. This value is in good agreement with the result extracted from neutron reflectometry data and theoretical expectations. Because of its high critical velocity for UCN and its good dielectric characteristics, cubic boron nitride coatings (isotopically enriched) will be useful for a number of applications in UCN experiments.

  15. Method of nitriding refractory metal articles

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Holcombe, Cressie E. (Knoxville, TN); Dykes, Norman L. (Oak Ridge, TN); Omatete, Ogbemi O. (Lagos, NG); Young, Albert C. (Flushing, NY)

    1994-01-01

    A method of nitriding a refractory-nitride forming metal or metalloid articles and composite articles. A consolidated metal or metalloid article or composite is placed inside a microwave oven and nitrogen containing gas is introduced into the microwave oven. The metal or metalloid article or composite is heated to a temperature sufficient to react the metal or metalloid with the nitrogen by applying a microwave energy within the microwave oven. The metal or metalloid article or composite is maintained at that temperature for a period of time sufficient to convert the article of metal or metalloid or composite to an article or composite of refractory nitride. In addition, a method of applying a coating, such as a coating of an oxide, a carbide, or a carbo-nitride, to an article of metal or metalloid by microwave heating.

  16. Low temperature route to uranium nitride

    DOE Patents [OSTI]

    Burrell, Anthony K. (Los Alamos, NM); Sattelberger, Alfred P. (Darien, IL); Yeamans, Charles (Berkeley, CA); Hartmann, Thomas (Idaho Falls, ID); Silva, G. W. Chinthaka (Las Vegas, NV); Cerefice, Gary (Henderson, NV); Czerwinski, Kenneth R. (Henderson, NV)

    2009-09-01

    A method of preparing an actinide nitride fuel for nuclear reactors is provided. The method comprises the steps of a) providing at least one actinide oxide and optionally zirconium oxide; b) mixing the oxide with a source of hydrogen fluoride for a period of time and at a temperature sufficient to convert the oxide to a fluoride salt; c) heating the fluoride salt to remove water; d) heating the fluoride salt in a nitrogen atmosphere for a period of time and at a temperature sufficient to convert the fluorides to nitrides; and e) heating the nitrides under vacuum and/or inert atmosphere for a period of time sufficient to convert the nitrides to mononitrides.

  17. Silicon nitride having a high tensile strength

    DOE Patents [OSTI]

    Pujari, V.K.; Tracey, D.M.; Foley, M.R.; Paille, N.I.; Pelletier, P.J.; Sales, L.C.; Willkens, C.A.; Yeckley, R.L.

    1998-06-02

    A ceramic body is disclosed comprising at least about 80 w/o silicon nitride and having a mean tensile strength of at least about 800 MPa. 4 figs.

  18. Smooth cubic commensurate oxides on gallium nitride

    SciTech Connect (OSTI)

    Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M.; Shelton, Christopher T.; Losego, Mark D.; Mita, Seiji; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.; Maria, Jon-Paul; Biegalski, Michael D.; Christen, Hans M.

    2014-02-14

    Smooth, commensurate alloys of ?111?-oriented Mg{sub 0.52}Ca{sub 0.48}O (MCO) thin films are demonstrated on Ga-polar, c+ [0001]-oriented GaN by surfactant-assisted molecular beam epitaxy and pulsed laser deposition. These are unique examples of coherent cubic oxide|nitride interfaces with structural and morphological perfection. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. HAADF-STEM images of the MCO|GaN interface show commensurate alignment of atomic planes with minimal defects due to lattice mismatch. STEM and DFT calculations show that GaN c/2 steps create incoherent boundaries in MCO over layers which manifest as two in-plane rotations and determine consequently the density of structural defects in otherwise coherent MCO. This new understanding of interfacial steps between HCP and FCC crystals identifies the steps needed to create globally defect-free heterostructures.

  19. Band anticrossing in dilute nitrides

    SciTech Connect (OSTI)

    Shan, W.; Yu, K.M.; Walukiewicz, W.; Wu, J.; Ager III, J.W.; Haller, E.E.

    2003-12-23

    Alloying III-V compounds with small amounts of nitrogen leads to dramatic reduction of the fundamental band-gap energy in the resulting dilute nitride alloys. The effect originates from an anti-crossing interaction between the extended conduction-band states and localized N states. The interaction splits the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy. The changes in the conduction band structure result in significant increase in electron effective mass and decrease in the electron mobility, and lead to a large enhance of the maximum doping level in GaInNAs doped with group VI donors. In addition, a striking asymmetry in the electrical activation of group IV and group VI donors can be attributed to mutual passivation process through formation of the nearest neighbor group-IV donor nitrogen pairs.

  20. The Nitrogen-Nitride Anode.

    SciTech Connect (OSTI)

    Delnick, Frank M.

    2014-10-01

    Nitrogen gas N 2 can be reduced to nitride N -3 in molten LiCl-KCl eutectic salt electrolyte. However, the direct oxidation of N -3 back to N 2 is kinetically slow and only occurs at high overvoltage. The overvoltage for N -3 oxidation can be eliminated by coordinating the N -3 with BN to form the dinitridoborate (BN 2 -3 ) anion which forms a 1-D conjugated linear inorganic polymer with -Li-N-B-N- repeating units. This polymer precipitates out of solution as Li 3 BN 2 which becomes a metallic conductor upon delithiation. Li 3 BN 2 is oxidized to Li + + N 2 + BN at about the N 2 /N -3 redox potential with very little overvoltage. In this report we evaluate the N 2 /N -3 redox couple as a battery anode for energy storage.

  1. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520525 nm employing graded growth-temperature profile

    E-Print Network [OSTI]

    Gilchrist, James F.

    Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520­525 nm employing current spreading and light extraction in GaN-based light emitting diodes Appl. Phys. Lett. 100, 061107 (2012) Electrically driven nanopyramid green light emitting diode Appl. Phys. Lett. 100, 061106 (2012

  2. Boron-Nitride Nanotubes Show Potential in Cancer Treatment |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Boron-Nitride Nanotubes Show Potential in Cancer Treatment NEWPORT NEWS, VA, April 26 - A new study has shown that adding boron-nitride nanotubes to the surface of cancer cells can...

  3. Method of manufacture of atomically thin boron nitride

    SciTech Connect (OSTI)

    Zettl, Alexander K

    2013-08-06

    The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

  4. Silicon nitride zoneplates and packaging for extreme ultraviolet instruments

    E-Print Network [OSTI]

    Anderson, Erik H.

    2014-01-01

    nitride zoneplates and packaging for extreme ultravioletphase. IV. MECHANICAL PACKAGING WITH BALLS AND GROOVESoverall efficiency. Packaging using kinematic configurations

  5. Silicon nitride ceramic having high fatigue life and high toughness

    DOE Patents [OSTI]

    Yeckley, Russell L. (Oakham, MA)

    1996-01-01

    A sintered silicon nitride ceramic comprising between about 0.6 mol % and about 3.2 mol % rare earth as rare earth oxide, and between about 85 w/o and about 95 w/o beta silicon nitride grains, wherein at least about 20% of the beta silicon nitride grains have a thickness of greater than about 1 micron.

  6. Influence of Microstructure and Temperature on the Interfacial Fracture Energy of Silicon Nitride/Boron Nitride Fibrous Monolithic Ceramics

    E-Print Network [OSTI]

    Trice, Rodney W.

    Influence of Microstructure and Temperature on the Interfacial Fracture Energy of Silicon Nitride and interfacial fracture energy of sili- con nitride/boron nitride fibrous monoliths, BN, were de- termined the fracture energy with increasing amounts of glass. Similar trends in the interfacial fracture energy

  7. In vitro bio-functionality of gallium nitride sensors for radiation biophysics

    SciTech Connect (OSTI)

    Hofstetter, Markus; Howgate, John; Schmid, Martin; Schoell, Sebastian; Sachsenhauser, Matthias; Adiguezel, Denis; Stutzmann, Martin; Sharp, Ian D.; Thalhammer, Stefan

    2012-07-27

    Highlights: Black-Right-Pointing-Pointer Gallium nitride based sensors show promising characteristics to monitor cellular parameters. Black-Right-Pointing-Pointer Cell growth experiments reveal excellent biocompatibiltiy of the host GaN material. Black-Right-Pointing-Pointer We present a biofunctionality assay using ionizing radiation. Black-Right-Pointing-Pointer DNA repair is utilized to evaluate material induced alterations in the cellular behavior. Black-Right-Pointing-Pointer GaN shows no bio-functional influence on the cellular environment. -- Abstract: There is an increasing interest in the integration of hybrid bio-semiconductor systems for the non-invasive evaluation of physiological parameters. High quality gallium nitride and its alloys show promising characteristics to monitor cellular parameters. Nevertheless, such applications not only request appropriate sensing capabilities but also the biocompatibility and especially the biofunctionality of materials. Here we show extensive biocompatibility studies of gallium nitride and, for the first time, a biofunctionality assay using ionizing radiation. Analytical sensor devices are used in medical settings, as well as for cell- and tissue engineering. Within these fields, semiconductor devices have increasingly been applied for online biosensing on a cellular and tissue level. Integration of advanced materials such as gallium nitride into these systems has the potential to increase the range of applicability for a multitude of test devices and greatly enhance sensitivity and functionality. However, for such applications it is necessary to optimize cell-surface interactions and to verify the biocompatibility of the semiconductor. In this work, we present studies of mouse fibroblast cell activity grown on gallium nitride surfaces after applying external noxa. Cell-semiconductor hybrids were irradiated with X-rays at air kerma doses up to 250 mGy and the DNA repair dynamics, cell proliferation, and cell growth dynamics of adherent cells were compared to control samples. The impact of ionizing radiation on DNA, along with the associated cellular repair mechanisms, is well characterized and serves as a reference tool for evaluation of substrate effects. The results indicate that gallium nitride does not require specific surface treatments to ensure biocompatibility and suggest that cell signaling is not affected by micro-environmental alterations arising from gallium nitride-cell interactions. The observation that gallium nitride provides no bio-functional influence on the cellular environment confirms that this material is well suited for future biosensing applications without the need for additional chemical surface modification.

  8. Silicon-nitride and metal composite

    DOE Patents [OSTI]

    Landingham, Richard L. (Livermore, CA); Huffsmith, Sarah A. (Urbana, IL)

    1981-01-01

    A composite and a method for bonding the composite. The composite includes a ceramic portion of silicon nitride, a refractory metal portion and a layer of MoSi.sub.2 indirectly bonding the composite together. The method includes contacting the layer of MoSi.sub.2 with a surface of the silicon nitride and with a surface of the metal; heating the layer to a temperature below 1400.degree. C.; and, simultaneously with the heating, compressing the layer such that the contacting is with a pressure of at least 30 MPa. This composite overcomes useful life problems in the fabrication of parts for a helical expander for use in power generation.

  9. Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

    SciTech Connect (OSTI)

    Du, Chunhua; Ma, Ziguang; Zhou, Junming; Lu, Taiping; Jiang, Yang; Zuo, Peng; Jia, Haiqiang; Chen, Hong, E-mail: hchen@iphy.ac.cn [Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-08-18

    We studied the effect of multiple interruptions during the quantum well growth on emission-efficiency enhancement of InGaN-based yellow-green light emitting diodes on c-plane sapphire substrate. The output power and dominant wavelength at 20?mA are 0.24 mW and 556.3?nm. High resolution x-ray diffraction, photoluminescence, and electroluminescence measurements demonstrate that efficiency enhancement could be partially attributed to crystal quality improvement of the active region resulted from reduced In clusters and relevant defects on the surface of InGaN layer by introducing interruptions. The less tilted energy band in the quantum well is also caused by the decrease of In-content gradient along c-axis resulted from In segregation during the interruptions, which increases spatial overlap of electron-hole wavefunction and thus the internal quantum efficiency. The latter also leads to smaller blueshift of dominant wavelength with current increasing.

  10. Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

    SciTech Connect (OSTI)

    Si, M. S.; Gao, Daqiang E-mail: xueds@lzu.edu.cn; Yang, Dezheng; Peng, Yong; Zhang, Z. Y.; Xue, Desheng E-mail: xueds@lzu.edu.cn; Liu, Yushen; Deng, Xiaohui; Zhang, G. P.

    2014-05-28

    Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized ? states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

  11. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, J.C.; Shul, R.J.

    1999-02-02

    An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

  12. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, John C. (Albuquerque, NM); Shul, Randy J. (Albuquerque, NM)

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  13. Communications CVD Growth of Boron Nitride Nanotubes

    E-Print Network [OSTI]

    in dense thickets on and about nickel boride catalyst particles at 1100 °C. The BN nanotubes resemble thoseCommunications CVD Growth of Boron Nitride Nanotubes Oleg R. Lourie, Carolyn R. Jones, Bart M Manuscript Received May 9, 2000 We describe BN-nanotube growth by chemical vapor deposition (CVD) using

  14. Boron nitride solid state neutron detector

    DOE Patents [OSTI]

    Doty, F. Patrick

    2004-04-27

    The present invention describes an apparatus useful for detecting neutrons, and particularly for detecting thermal neutrons, while remaining insensitive to gamma radiation. Neutrons are detected by direct measurement of current pulses produced by an interaction of the neutrons with hexagonal pyrolytic boron nitride.

  15. Titanium nitride electrodes for thermoelectric generators

    DOE Patents [OSTI]

    Novak, Robert F. (Farmington Hills, MI); Schmatz, Duane J. (Dearborn Heights, MI); Hunt, Thomas K. (Ann Arbor, MI)

    1987-12-22

    The invention is directed to a composite article suitable for use in thermoelectric generators. The article comprises a thin film of titanium nitride as an electrode deposited onto solid electrolyte. The invention is also directed to the method of making same.

  16. Effect of Thermal Annealing in Ammonia on the Properties of InGaN Nanowires with Different Indium Concentrations

    SciTech Connect (OSTI)

    Hahn, Cristopher; Cordones, Amy; Andrews, Sean; Gao, Hanwei; Fu, Anthony; Leone, Stephen; Yang, Peidong

    2012-10-02

    The utility of an annealing procedure in ammonia ambient is investigated for improving the optical characteristics of InxGa1?xN nanowires (0.07 ? x ? 0.42) grown on c-Al2O3 using a halide chemical vapor deposition method. Morphological studies using scanning electron microscopy confirm that the nanowire morphology is retained after annealing in ammonia at temperatures up to 800 ?C. However, significant indium etching and composition inhomogeneities are observed for higher indium composition nanowires (x = 0.28, 0.42), as measured by energy-dispersive X-ray spectroscopy and Z-contrast scanning transmission electron microscopy. Structural analyses, using X-ray diffraction and high-resolution transmission electron microscopy, indicate that this is a result of the greater thermal instability of higher indium composition nanowires. The effect of these structural changes on the optical quality of InGaN nanowires is examined using steady-state and time-resolved photoluminescence measurements. Annealing in ammonia enhances the integrated photoluminescence intensity of InxGa1?xN nanowires by up to a factor of 4.11 ? 0.03 (for x = 0.42) by increasing the rate of radiative recombination. Fitting of photoluminescence decay curves to a Kohlrausch stretched exponential indicates that this increase is directly related to a larger distribution of recombination rates from composition inhomogeneities caused by annealing. The results demonstrate the role of thermal instability on the improved optical properties of InGaN nanowires annealed in ammonia.

  17. Low-loss binder for hot pressing boron nitride

    DOE Patents [OSTI]

    Maya, Leon (Oak Ridge, TN)

    1991-01-01

    Borazine derivatives used as low-loss binders and precursors for making ceramic boron nitride structures. The derivative forms the same composition as the boron nitride starting material, thereby filling the voids with the same boron nitride material upon forming and hot pressing. The derivatives have a further advantage of being low in carbon thus resulting in less volatile byproduct that can result in bubble formation during pressing.

  18. Synthesis and characterization of nitrides of iridium and palladiums

    SciTech Connect (OSTI)

    Crowhurst, Jonathan C.; Goncharov, Alexander F.; Sadigh, B.; Zaug, J.M.; Aberg, D.; Meng, Yue; Prakapenka, Vitali B. (LLNL); (CIW); (UC)

    2008-08-14

    We describe the synthesis of nitrides of iridium and palladium using the laser-heated diamond anvil cell. We have used the in situ techniques of x-ray powder diffraction and Raman scattering to characterize these compounds and have compared our experimental findings where possible to the results of first-principles theoretical calculations. We suggest that palladium nitride is isostructural with pyrite, while iridium nitride has a monoclinic symmetry and is isostructural with baddeleyite.

  19. Method for locating metallic nitride inclusions in metallic alloy ingots

    DOE Patents [OSTI]

    White, Jack C. (Albany, OR); Traut, Davis E. (Corvallis, OR); Oden, Laurance L. (Albany, OR); Schmitt, Roman A. (Corvallis, OR)

    1992-01-01

    A method of determining the location and history of metallic nitride and/or oxynitride inclusions in metallic melts. The method includes the steps of labeling metallic nitride and/or oxynitride inclusions by making a coreduced metallic-hafnium sponge from a mixture of hafnium chloride and the chloride of a metal, reducing the mixed chlorides with magnesium, nitriding the hafnium-labeled metallic-hafnium sponge, and seeding the sponge to be melted with hafnium-labeled nitride inclusions. The ingots are neutron activated and the hafnium is located by radiometric means. Hafnium possesses exactly the proper metallurgical and radiochemical properties for this use.

  20. Building a linker library for silicon nitride window membrane...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building a linker library for silicon nitride window membrane functionalization The research in the Emergent Magnetic and Atomic Structures Group is aimed at determining the nature...

  1. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

    DOE Patents [OSTI]

    Lowden, Richard A. (Powell, TN)

    1994-01-01

    A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

  2. Nitrided Metallic Bipolar Plates M.P. Brady (project lead)

    E-Print Network [OSTI]

    Nitrided Metallic Bipolar Plates M.P. Brady (project lead) P. F. Tortorelli Oak Ridge National - $2480 K · ORNL (Lead) · Allegheny Ludlum · Funding for Year 2 · Arizona State University - $2050 K wt.% ­ pre-oxidation key to protective surface nitride formation ­ V segregation into Cr-oxide makes

  3. Process for producing ceramic nitrides anc carbonitrides and their precursors

    DOE Patents [OSTI]

    Brown, G.M.; Maya, L.

    1987-02-25

    A process for preparing ceramic nitrides and carbon nitrides in the form of very pure, fine particulate powder. Appropriate precursors is prepared by reaching a transition metal alkylamide with ammonia to produce a mixture of metal amide and metal imide in the form of an easily pyrolyzable precipitate.

  4. Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides

    E-Print Network [OSTI]

    Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides Jill S. Becker, Esther Kim, and conformal coatings of higher nitrides of hafnium and zirconium were produced by atomic layer deposition from-colored, and highly conducting. I. Introduction The mononitrides of hafnium and zirconium of stoi- chiometry MN (M

  5. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

    DOE Patents [OSTI]

    Wang, George T. (Albuquerque, NM); Li, Qiming (Albuquerque, NM); Creighton, J. Randall (Albuquerque, NM)

    2010-03-02

    A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.

  6. Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

    SciTech Connect (OSTI)

    Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.; Calleja, E.

    2013-05-06

    This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either in the blue, green, or red spectral range. An adequate structure tailoring and monolithic integration in a single nanocolumnar heterostructure of three InGaN portions emitting in the red-green-blue colors lead to white light emission.

  7. Cordierite silicon nitride filters. Final report

    SciTech Connect (OSTI)

    Sawyer, J.; Buchan, B.; Duiven, R.; Berger, M.; Cleveland, J.; Ferri, J.

    1992-02-01

    The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

  8. High efficiency III-nitride light-emitting diodes

    DOE Patents [OSTI]

    Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

    2013-05-28

    Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

  9. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOE Patents [OSTI]

    Sankar, Sambasivan; Goyal, Amit; Barnett, Scott A.; Kim, Ilwon; Kroeger, Donald M.

    2004-08-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

  10. Conductive and robust nitride buffer layers on biaxially textured substrates

    DOE Patents [OSTI]

    Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

    2009-03-31

    The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

  11. Silicon nitride protective coatings for silvered glass mirrors

    DOE Patents [OSTI]

    Tracy, C.E.; Benson, D.K.

    1984-07-20

    A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate prior to metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

  12. Vibronic fine structure in high-resolution x-ray absorption spectra from ion-bombarded boron nitride nanotubes

    SciTech Connect (OSTI)

    Petravic, Mladen; Peter, Robert; Varasanec, Marijana; Li Luhua; Chen Ying; Cowie, Bruce C. C.

    2013-05-15

    The authors have applied high-resolution near-edge x-ray absorption fine structure measurements around the nitrogen K-edge to study the effects of ion-bombardment on near-surface properties of boron nitride nanotubes. A notable difference has been observed between surface sensitive partial electron yield (PEY) and bulk sensitive total electron yield (TEY) fine-structure measurements. The authors assign the PEY fine structure to the coupling of excited molecular vibrational modes to electronic transitions in NO molecules trapped just below the surface. Oxidation resistance of the boron nitride nanotubes is significantly reduced by low energy ion bombardment, as broken B-N bonds are replaced by N-O bonds involving oxygen present in the surface region. In contrast to the PEY spectra, the bulk sensitive TEY measurements on as-grown samples do not exhibit any fine structure while the ion-bombarded samples show a clear vibronic signature of molecular nitrogen.

  13. Iron-Nitride Alloy Magnets: Transformation Enabled Nitride Magnets Absent Rare Earths (TEN Mare)

    SciTech Connect (OSTI)

    2012-01-01

    REACT Project: Case Western is developing a highly magnetic iron-nitride alloy to use in the magnets that power electric motors found in EVs and renewable power generators. This would reduce the overall price of the motor by eliminating the expensive imported rare earth minerals typically found in today’s best commercial magnets. The iron-nitride powder is sourced from abundant and inexpensive materials found in the U.S. The ultimate goal of this project is to demonstrate this new magnet system, which contains no rare earths, in a prototype electric motor. This could significantly reduce the amount of greenhouse gases emitted in the U.S. each year by encouraging the use of clean alternatives to oil and coal.

  14. NOVEL SALTS OF GRAPHITE AND A BORON NITRIDE SALT

    E-Print Network [OSTI]

    Bartlett, Neil

    2011-01-01

    ~ i\\f'{y AND DOCUMENTS SECTION NOVEL SALTS OF GRAPHITE ANDA BORON NITRIDE SALT Neil Bartlett, R. N. Biagioni, B. W.privately owned rights. Novel Salts of Graphite and a Boron

  15. Electron transport in the III-V nitride alloys

    SciTech Connect (OSTI)

    Foutz, B.E.; O'Leary, S.K.; Shur, M.S.; Eastman, L.F.

    1999-07-01

    The authors study electron transport in the alloys of aluminum nitride and gallium nitride and alloys of indium nitride and gallium nitride. In particular, employing Monte Carlo simulations they determine the velocity-field characteristics associated with these alloys for various alloy compositions. They also determine the dependence of the low-field mobility on the alloy composition. They find that while the low-field mobility is a strong function of the alloy composition, the peak and saturation drift velocities exhibit a more mild dependence. Transient electron transport is also considered. They find that the velocity overshoot characteristic is a strong function of the alloy composition. The device implications of these results are discussed.

  16. Single-layer graphene on silicon nitride micromembrane resonators

    E-Print Network [OSTI]

    Schmid, Silvan

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization ...

  17. III-Nitride Nanowires: Emerging Materials for Lighting and Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    III-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications March 20, 2012 at 3pm36-428 George T. Wang Advanced Materials Science, Sandia National Laboratories...

  18. Process for manufacture of semipermeable silicon nitride membranes

    DOE Patents [OSTI]

    Galambos, Paul Charles; Shul, Randy J.; Willison, Christi Gober

    2003-12-09

    A new class of semipermeable membranes, and techniques for their fabrication, have been developed. These membranes, formed by appropriate etching of a deposited silicon nitride layer, are robust, easily manufacturable, and compatible with a wide range of silicon micromachining techniques.

  19. Apparatus for the production of boron nitride nanotubes

    SciTech Connect (OSTI)

    Smith, Michael W; Jordan, Kevin

    2014-06-17

    An apparatus for the large scale production of boron nitride nanotubes comprising; a pressure chamber containing; a continuously fed boron containing target; a source of thermal energy preferably a focused laser beam; a cooled condenser; a source of pressurized nitrogen gas; and a mechanism for extracting boron nitride nanotubes that are condensed on or in the area of the cooled condenser from the pressure chamber.

  20. Method for silicon nitride precursor solids recovery

    DOE Patents [OSTI]

    Crosbie, Gary M. (Dearborn, MI); Predmesky, Ronald L. (Livonia, MI); Nicholson, John M. (Wayne, MI)

    1992-12-15

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  1. Apparatus for silicon nitride precursor solids recovery

    DOE Patents [OSTI]

    Crosbie, Gary M. (Dearborn, MI); Predmesky, Ronald L. (Livonia, MI); Nicholson, John M. (Wayne, MI)

    1995-04-04

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  2. A boron nitride nanotube peapod thermal rectifier

    SciTech Connect (OSTI)

    Loh, G. C., E-mail: jgloh@mtu.edu [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Institute of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Baillargeat, D. [CNRS-International-NTU-Thales Research Alliance (CINTRA), 50 Nanyang Drive, Singapore 637553 (Singapore)

    2014-06-28

    The precise guidance of heat from one specific location to another is paramount in many industrial and commercial applications, including thermal management and thermoelectric generation. One of the cardinal requirements is a preferential conduction of thermal energy, also known as thermal rectification, in the materials. This study introduces a novel nanomaterial for rectifying heat—the boron nitride nanotube peapod thermal rectifier. Classical non-equilibrium molecular dynamics simulations are performed on this nanomaterial, and interestingly, the strength of the rectification phenomenon is dissimilar at different operating temperatures. This is due to the contingence of the thermal flux on the conductance at the localized region around the scatterer, which varies with temperature. The rectification performance of the peapod rectifier is inherently dependent on its asymmetry. Last but not least, the favourable rectifying direction in the nanomaterial is established.

  3. Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire

    E-Print Network [OSTI]

    Gilchrist, James F.

    -patterned AGOG sapphire demonstrated a 24% enhancement of output power enhancement over that of LEDs grown) light-emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano- emitting diodes (LEDs) in solid state lighting applications [1 À11]. In conventional metalorganic vapor

  4. Synthesis of III-V nitride nanowires with controlled structure, morphology, and composition

    E-Print Network [OSTI]

    Crawford, Samuel Curtis

    2014-01-01

    The III-V nitride materials system offers tunable electronic and optical properties that can be tailored for specific electronic and optoelectronic applications by varying the (In,Ga,Al)N alloy composition. While nitride ...

  5. Feasibility of breeding in hard spectrum boiling water reactors with oxide and nitride fuels

    E-Print Network [OSTI]

    Feng, Bo, Ph. D. Massachusetts Institute of Technology

    2011-01-01

    This study assesses the neutronic, thermal-hydraulic, and fuel performance aspects of using nitride fuel in place of oxides in Pu-based high conversion light water reactor designs. Using the higher density nitride fuel ...

  6. Modification of surface properties on a nitride based coating films through mirror-quality finish grinding

    E-Print Network [OSTI]

    Katahira, K.; H. Ohmori; J. Komotori; Dornfeld, David; H. Kotani; M. Mizutani

    2010-01-01

    on a nitride based coating ?lms through mirror-quality ?nishA B S T R A C T Keywords: Coating Grinding Tribology In thistitanium nitride based coating ?lms ( TiN, TiCN, and TiAIN).

  7. HIGH-TEMPERATURE THERMODYNAMIC ACTIVITIES OF ZIRCONIUM IN PLATINUM ALLOYS DETERMINED BY NITROGEN-NITRIDE EQUILIBRIA

    E-Print Network [OSTI]

    Goodman, David Alan

    2010-01-01

    powders could not be accurately A mixture of 87 volume percent zirconium nitride and 13 volume percent -325 mesh palladium

  8. CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS

    E-Print Network [OSTI]

    to be mainly concentrated at the oxide/nitride interface. The thermal stability of the charge is shown silicon nitride layers can lead to a significant improvement in surface recombination at lightly doped of a tunnel oxide, a silicon nitride layer and optionally, a barrier oxide or other dielectric material. As

  9. DETERMINING OPTICAL CONSTANTS OF URANIUM NITRIDE THIN FILMS IN THE EXTREME

    E-Print Network [OSTI]

    Hart, Gus

    deposition and characterization of reactively-sputtered uranium nitride thin films. I also report opticalDETERMINING OPTICAL CONSTANTS OF URANIUM NITRIDE THIN FILMS IN THE EXTREME ULTRAVIOLET (1.6-35 NM.1 Application 1 1.2 Optical Constants 2 1.3 Project Focus 7 2 Uranium Nitride Thin Films 8 2.1 Sputtering 8 2

  10. Half-metallic to insulating behavior of rare-earth nitrides C. M. Aerts,1

    E-Print Network [OSTI]

    Svane, Axel Torstein

    Half-metallic to insulating behavior of rare-earth nitrides C. M. Aerts,1 P. Strange,1 M. Horne,1 W in the literature that rare-earth nitrides may form half-metallic ferromagnets.6­8 This is sur- prising because 30 January 2004 The electronic structure of the rare-earth nitrides is studied systematically using

  11. Excitation dependent two-component spontaneous emission and ultrafast amplified spontaneous emission in dislocation-free InGaN nanowires

    SciTech Connect (OSTI)

    You, Guanjun; Zhang, Chunfeng; Xu, Jian; Guo, Wei; Bhattacharya, Pallab; Henderson, Ron

    2013-03-04

    Amplified spontaneous emission (ASE) at 456 nm from In{sub 0.2}Ga{sub 0.8}N nanowires grown on (001) silicon by catalyst-free molecular beam epitaxy was observed at room temperature under femtosecond excitation. The photoluminescence spectra below ASE threshold consist of two spontaneous emission bands centered at {approx}555 nm and {approx}480 nm, respectively, revealing the co-existence of deeply and shallowly localized exciton states in the nanowires. The ASE peak emerges from the 480 nm spontaneous emission band when the excitation density exceeds {approx}120 {mu}J/cm{sup 2}, indicating that optical gain arises from the radiative recombination of shallowly localized excitons in the nanowires. Time-resolved photoluminescence measurements revealed that the ASE process completes within 1.5 ps, suggesting a remarkably high stimulated emission recombination rate in one-dimensional InGaN nanowires.

  12. The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Jiao, Wenyuan; Kong, Wei; Li, Jincheng; Kim, Tong-Ho; Brown, April S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)] [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Collar, Kristen [Department of Physics, Duke University, Durham, North Carolina 27708 (United States)] [Department of Physics, Duke University, Durham, North Carolina 27708 (United States)

    2013-10-14

    A study of the relationship between strain and the incorporation of group III elements in ternary InGaN and InAlN grown by molecular beam epitaxy is reported. Using X-ray Photoelectron Spectroscopy compositional depth profiles with x-ray diffraction, we are able to find a clear relationship between strain and In incorporation including tensile-strained InAlN which has, to date, not been studied. The results show that fully strained films contain homogeneous indium composition while partially relaxed films have a non-homogeneous indium composition with depth. These results can be interpreted by considering the impurity formation energies of indium in host lattices.

  13. Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission

    SciTech Connect (OSTI)

    Ko, Suk-Min; Kwack, Ho-Sang; Park, Chunghyun; Yoo, Yang-Seok; Cho, Yong-Hoon, E-mail: yhc@kaist.ac.kr [Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)] [Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Kwon, Soon-Yong [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of) [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Jin Kim, Hee; Yoon, Euijoon, E-mail: eyoon@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)] [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of); Si Dang, Le [Nanophysics and Semiconductors, CEA-CNRS-UJF Group, Institut Néel, CNRS Grenoble, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)] [Nanophysics and Semiconductors, CEA-CNRS-UJF Group, Institut Néel, CNRS Grenoble, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)

    2013-11-25

    Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect.

  14. Active Control of Nitride Plasmonic Dispersion in the Far Infrared.

    SciTech Connect (OSTI)

    Shaner, Eric A.; Dyer, Gregory Conrad; Seng, William Francis; Bethke, Donald Thomas; Grine, Albert Dario,; Baca, Albert G.; Allerman, Andrew A.

    2014-11-01

    We investigate plasmonic structures in nitride-based materials for far-infrared (IR) applications. The two dimensional electron gas (2DEG) in the GaN/AlGaN material system, much like metal- dielectric structures, is a patternable plasmonic medium. However, it also permits for direct tunability via an applied voltage. While there have been proof-of-principle demonstrations of plasma excitations in nitride 2DEGs, exploration of the potential of this material system has thus far been limited. We recently demonstrated coherent phenomena such as the formation of plasmonic crystals, strong coupling of tunable crystal defects to a plasmonic crystal, and electromagnetically induced transparency in GaAs/AlGaAs 2DEGs at sub-THz frequencies. In this project, we explore whether these effects can be realized in nitride 2DEG materials above 1 THz and at temperatures exceeding 77 K.

  15. Cooled silicon nitride stationary turbine vane risk reduction. Final report

    SciTech Connect (OSTI)

    Holowczak, John

    1999-12-31

    The purpose of this program was to reduce the technical risk factors for demonstration of air cooled silicon nitride turbine vanes. The effort involved vane prototype fabrication efforts at two U.S. based gas turbine grade silicon nitride component manufacturers. The efficacy of the cooling system was analyzed via a thermal time/temperature flow test technique previously at UTRC. By having multiple vendors work on parts fabrication, the chance of program success increased for producing these challenging components. The majority of the effort under this contract focused on developing methods for, and producing, the complex thin walled silicon nitride vanes. Components developed under this program will undergo engine environment testing within N00014-96-2-0014.

  16. Synthesis and Optimization of the Sintering Kinetics of Actinide Nitrides

    SciTech Connect (OSTI)

    Drryl P. Butt; Brian Jaques

    2009-03-31

    Research conducted for this NERI project has advanced the understanding and feasibility of nitride nuclear fuel processing. In order to perform this research, necessary laboratory infrastructure was developed; including basic facilities and experimental equipment. Notable accomplishments from this project include: the synthesis of uranium, dysprosium, and cerium nitrides using a novel, low-cost mechanical method at room temperature; the synthesis of phase pure UN, DyN, and CeN using thermal methods; and the sintering of UN and (Ux, Dy1-x)N (0.7 ? X ? 1) pellets from phase pure powder that was synthesized in the Advanced Materials Laboratory at Boise State University.

  17. Process for synthesizing titanium carbide, titanium nitride and titanium carbonitride

    DOE Patents [OSTI]

    Koc, Rasit (Lakewood, CO); Glatzmaier, Gregory C. (Boulder, CO)

    1995-01-01

    A process for synthesizing titanium carbide, titanium nitride or titanium carbonitride. The process comprises placing particles of titanium, a titanium salt or titanium dioxide within a vessel and providing a carbon-containing atmosphere within the vessel. The vessel is heated to a pyrolysis temperature sufficient to pyrolyze the carbon to thereby coat the particles with a carbon coating. Thereafter, the carbon-coated particles are heated in an inert atmosphere to produce titanium carbide, or in a nitrogen atmosphere to produce titanium nitride or titanium carbonitride, with the heating being of a temperature and time sufficient to produce a substantially complete solid solution.

  18. Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

    SciTech Connect (OSTI)

    Bengoechea-Encabo, A.; Albert, S.; Barbagini, F.; Sanchez-Garcia, M. A.; Calleja, E. [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain)] [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain); Zuñiga-Perez, J.; Mierry, P. de [CRHEA-CNRS, 06560 Valbonne (France)] [CRHEA-CNRS, 06560 Valbonne (France); Trampert, A. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)] [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2013-12-09

    The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11–22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes.

  19. BORON NITRIDE CAPACITORS FOR ADVANCED POWER ELECTRONIC DEVICES

    SciTech Connect (OSTI)

    N. Badi; D. Starikov; C. Boney; A. Bensaoula; D. Johnstone

    2010-11-01

    This project fabricates long-life boron nitride/boron oxynitride thin film -based capacitors for advanced SiC power electronics with a broad operating temperature range using a physical vapor deposition (PVD) technique. The use of vapor deposition provides for precise control and quality material formation.

  20. Lattice matched crystalline substrates for cubic nitride semiconductor growth

    DOE Patents [OSTI]

    Norman, Andrew G; Ptak, Aaron J; McMahon, William E

    2015-02-24

    Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline In.sub.xGa.sub.yAl.sub.1-x-yN alloy. The lattice parameter of the In.sub.xGa.sub.yAl.sub.1-x-yN or other group III-nitride alloy may be related to the substrate lattice parameter by (a')= 2(a) or (a')=(a)/ 2. The semiconductor alloy may be prepared to have a selected band gap.

  1. Boron nitride substrates for high-quality graphene electronics

    E-Print Network [OSTI]

    Shepard, Kenneth

    Boron nitride substrates for high-quality graphene electronics C. R. Dean1,2 *, A. F. Young3 , I and J. Hone2 * Graphene devices on standard SiO2 substrates are highly disor- dered, exhibiting characteristics that are far inferior to the expected intrinsic properties of graphene1­12 . Although suspend- ing

  2. Methods for improved growth of group III nitride buffer layers

    DOE Patents [OSTI]

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  3. Evaluation and silicon nitride internal combustion engine components

    SciTech Connect (OSTI)

    Voldrich, W. (Allied-Signal Aerospace Co., Torrance, CA (United States). Garrett Ceramic Components Div.)

    1992-04-01

    The feasibility of silicon nitride (Si[sub 3]N[sub 4]) use in internal combustion engines was studied by testing three different components for wear resistance and lower reciprocating mass. The information obtained from these preliminary spin rig and engine tests indicates several design changes are necessary to survive high-stress engine applications. The three silicon nitride components tested were valve spring retainers, tappet rollers, and fuel pump push rod ends. Garrett Ceramic Components' gas-pressure sinterable Si[sub 3]N[sub 4] (GS-44) was used to fabricate the above components. Components were final machined from densified blanks that had been green formed by isostatic pressing of GS-44 granules. Spin rig testing of the valve spring retainers indicated that these Si[sub 3]N[sub 4] components could survive at high RPM levels (9,500) when teamed with silicon nitride valves and lower spring tension than standard titanium components. Silicon nitride tappet rollers showed no wear on roller O.D. or I.D. surfaces, steel axles and lifters; however, due to the uncrowned design of these particular rollers the cam lobes indicated wear after spin rig testing. Fuel pump push rod ends were successful at reducing wear on the cam lobe and rod end when tested on spin rigs and in real-world race applications.

  4. Continuous Fiber Ceramic Composite (CFCC) Program: Gaseous Nitridation

    SciTech Connect (OSTI)

    R. Suplinskas G. DiBona; W. Grant

    2001-10-29

    Textron has developed a mature process for the fabrication of continuous fiber ceramic composite (CFCC) tubes for application in the aluminum processing and casting industry. The major milestones in this project are System Composition; Matrix Formulation; Preform Fabrication; Nitridation; Material Characterization; Component Evaluation

  5. Charge decay characteristics of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures and extraction of the nitride

    E-Print Network [OSTI]

    Lee, Jong Duk

    , respectively. T­B is the time constant associated with trap-to-band tunneling of an electron,10 T­T is the time constant associated with trap-to-trap tunneling of an electron, B­T is the time constant associated bulk electron trapping rates for silicon nitrides are 102 ­105 times larger than deposited oxides

  6. Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-

    E-Print Network [OSTI]

    Lee, Jong Duk

    Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative at elevated temperatures 150 °C , which can be used for extracting the electron trap density distribution tunneling, Eox t is the internal electric field induced by the trapped charges in the silicon nitride layer

  7. The utilization of microwave heating for the fabrication of sintered reaction-bonded silicon nitride

    SciTech Connect (OSTI)

    Kiggans, J.O.; Tiegs, T.N.; Lin, H.T.; Holcombe, C.E.

    1995-12-31

    The results of studies in which microwave heating was used to fabricate sintered reaction-bonded silicon nitride (SRBSN) are reviewed. These results are compared to parallel studies where conventional heating was used for the fabrication of these materials. Microwave fabrication of SRBSN involves a single heating cycle, whereas conventional processing requires two separate furnace runs and sample packaging steps. SRBSN containing high levels of sintering aids which were fabricated by microwave heating showed improved strength and toughness, as compared to those materials fabricated using a conventional resistance-heated furnace. An analysis of the microstructures of the microwave fabricated materials showed enhanced acicular grain growth as compared to conventionally heated material. Results are presented on studies involving the scale-up of the microwave fabrication process.

  8. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

    DOE Patents [OSTI]

    Hui, Rongqing (Lenexa, KS); Jiang,Hong-Xing (Manhattan, KS); Lin, Jing-Yu (Manhattan, KS)

    2008-03-18

    The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

  9. Surface Preparation of Gallium Nitride for Atomic Layer Deposition of Aluminum Oxide /

    E-Print Network [OSTI]

    Kerr, Amanda J.

    2014-01-01

    Nitride for Atomic Layer Deposition of Aluminum Oxide AForce Microscopy Atomic Layer Deposition Capacitance-VoltageSurfaces for Atomic Layer Deposition of Aluminum Oxide” x

  10. Synthesis and Functionalization of Carbon and Boron Nitride Nanomaterials and Their Applications

    E-Print Network [OSTI]

    Erickson, Kristopher John

    2012-01-01

    Carbon Nitrides for Hydrogen Storage. Adv. Funct. Mater.N compounds for chemical hydrogen storage. Chemical SocietyT. , High-Pressure Hydrogen Storage in Zeolite-Templated

  11. The phase diagram and hardness of carbon nitrides

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dong, Huafeng; Oganov, Artem R.; Moscow Inst. of Physics and Technology; Northwestern Polytechnical Univ., Xi'an; Zhu, Qiang; Qian, Guang-Rui

    2015-05-06

    Novel superhard materials, especially those with superior thermal and chemical stability, are needed to replace diamond. Carbon nitrides (C-N), which are likely to possess these characteristics and have even been expected to be harder than diamond, are excellent candidates. Here we report three new superhard and thermodynamically stable carbon nitride phases. Based on a systematic evolutionary structure searches, we report a complete phase diagram of the C-N system at 0–300 GPa and analyze the hardest metastable structures. Surprisingly, we find that at zero pressure, the earlier proposed graphitic-C3N4 structure (P6-bar m2) is dynamically unstable, and we find the lowest-energy structuremore »based on s-triazine unit and s-heptazine unit.« less

  12. The phase diagram and hardness of carbon nitrides

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dong, Huafeng; Oganov, Artem R.; Zhu, Qiang; Qian, Guang-Rui

    2015-05-06

    Novel superhard materials, especially those with superior thermal and chemical stability, are needed to replace diamond. Carbon nitrides (C-N), which are likely to possess these characteristics and have even been expected to be harder than diamond, are excellent candidates. Here we report three new superhard and thermodynamically stable carbon nitride phases. Based on a systematic evolutionary structure searches, we report a complete phase diagram of the C-N system at 0–300 GPa and analyze the hardest metastable structures. Surprisingly, we find that at zero pressure, the earlier proposed graphitic-C3N4 structure (P_6m2) is dynamically unstable, and we find the lowest-energy structure based on s-triazine unit and s-heptazine unit.

  13. FY07 LDRD Final Report Synthesis under High Pressure and Temperature of New Metal Nitrides

    SciTech Connect (OSTI)

    Crowhurst, J C; Sadigh, B; Aberg, D; Zaug, J M; Goncharov, A F

    2008-09-23

    The original aim of this LDRD was to determine with unprecedented precision the melting curve of iron to geophysically relevant pressures. In the course of developing much of the technology and techniques required to obtain this information we have encountered and studied novel chemical reactions some of whose products are stable or metastable under ambient conditions. Specifically we have synthesized nitrides of the platinum group metals including platinum, iridium, and palladium. We have also carried out in depth first principles theoretical investigations into the nature of these materials. We believed that the scientific impact of continuing this work would be greater than that of the original goals of this project. Indeed the work has led to a number of high profile publications with additional publications in preparation. While nitrides of the transition metals are generally of tremendous technological importance, those of the noble metals in particular have enjoyed much experimental and theoretical attention in the very short time since they were first synthesized. The field was and clearly remains open for further study. While the scientific motivation for this research is different from that originally proposed, many of the associated methods in which we have now gained experience are similar or identical. These include use of the diamond anvil cell combined with technologies to generate high temperatures, the in-situ technique of Raman scattering using our purpose-built, state-of-the-art system, analytical techniques for determining the composition of recovered samples such as x-ray photoelectron spectroscopy, and finally synchrotron-based techniques such as x-ray diffraction for structural and equation of state determinations. Close interactions between theorists and experimentalists has and will continue to allow our group to rapidly and reliably interpret complicated results on the structure and dynamics of these compounds and also additional novel materials. Although the purely scientific dividends of this project have been substantial, there remains the possibility of a technological application--now that nitrides with likely desirable properties have been shown to exist, large-scale synthesis techniques can be considered.

  14. Charge carrier transport properties in layer structured hexagonal boron nitride

    SciTech Connect (OSTI)

    Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X., E-mail: hx.jiang@ttu.edu [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2014-10-15

    Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (~ 6.4 eV), hexagonal boron nitride (hBN) has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700?°K). The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of ? ? (T/T{sub 0}){sup ??} with ? = 3.02, satisfying the two-dimensional (2D) carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ?? = 192 meV (or 1546 cm{sup -1}), which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

  15. Study the gas sensing properties of boron nitride nanosheets

    SciTech Connect (OSTI)

    Sajjad, Muhammad; Feng, Peter, E-mail: p.feng@upr.edu

    2014-01-01

    Graphical abstract: - Highlights: • We synthesized boron nitride nanosheets (BNNSs) on silicon substrate. • We analyzed gas sensing properties of BNNSs-based gas-sensor device. • CH{sub 4} gas is used to measure gas-sensing properties of the device. • Quick response and recovery time of the device is recorded. • BNNSs showed excellent sensitivity to the working gas. - Abstract: In the present communication, we report on the synthesis of boron nitride nanosheets (BNNSs) and study of their gas sensing properties. BNNSs are synthesized by irradiating pyrolytic hexagonal boron nitride (h-BN) target using CO{sub 2} laser pulses. High resolution transmission electron microscopic measurements (HRTEM) revealed 2-dientional honeycomb crystal lattice structure of BNNSs. HRTEM, electron diffraction, XRD and Raman scattering measurements clearly identified h-BN. Gas sensing properties of synthesized BNNSs were analyzed with prototype gas sensor using methane as working gas. A systematic response curve of the sensor is recorded in each cycle of gas “in” and “out”; suggesting excellent sensitivity and high performance of BNNSs-based gas-sensor.

  16. Nitridation under ammonia of high surface area vanadium aerogels

    SciTech Connect (OSTI)

    Merdrignac-Conanec, Odile [Laboratoire Verres et Ceramiques, UMR CNRS 6512, Institut de Chimie de Rennes, Universite de Rennes 1, Campus de Beaulieu, F-35042 Rennes Cedex (France)]. E-mail: odile.merdrignac@univ-rennes1.fr; El Badraoui, Khadija [Laboratoire Verres et Ceramiques, UMR CNRS 6512, Institut de Chimie de Rennes, Universite de Rennes 1, Campus de Beaulieu, F-35042 Rennes Cedex (France); L'Haridon, Paul [Laboratoire Verres et Ceramiques, UMR CNRS 6512, Institut de Chimie de Rennes, Universite de Rennes 1, Campus de Beaulieu, F-35042 Rennes Cedex (France)

    2005-01-15

    Vanadium pentoxide gels have been obtained from decavanadic acid prepared by ion exchange on a resin from ammonium metavanadate solution. The progressive removal of water by solvent exchange in supercritical conditions led to the formation of high surface area V{sub 2}O{sub 5}, 1.6H{sub 2}O aerogels. Heat treatment under ammonia has been performed on these aerogels in the 450-900 deg. C temperature range. The oxide precursors and oxynitrides have been characterized by XRD, SEM, TGA, BET. Nitridation leads to divided oxynitride powders in which the fibrous structure of the aerogel is maintained. The use of both very low heating rates and high surface area aerogel precursors allows a higher rate and a lower threshold of nitridation than those reported in previous works. By adjusting the nitridation temperature, it has been possible to prepare oxynitrides with various nitrogen enrichment and vanadium valency states. Whatever the V(O,N) composition, the oxidation of the oxynitrides in air starts between 250 and 300 deg. C. This determines their potential use as chemical gas sensors at a maximum working temperature of 250 deg. C.

  17. Orogenic movement mechanism for the formation of symmetrical relief features in copper nitride thin films

    E-Print Network [OSTI]

    Zexian, Cao

    Orogenic movement mechanism for the formation of symmetrical relief features in copper nitride thin heterogeneity, etc. In preparing thin films of the thermally unstable copper nitride Cu3N, growth proceeds-gap semiconduc- tors such as SiC and GaN that are expected to operate at temperatures over 300 °C demand both

  18. Field emission and current-voltage properties of boron nitride nanotubes

    E-Print Network [OSTI]

    Rubloff, Gary W.

    Field emission and current-voltage properties of boron nitride nanotubes John Cumings*, A. Zettl microscope. Stable currents were measured in a field emission geometry, but in contact the nanotubes Published by Elsevier Ltd. PACS: 79.70. þ q Keywords: A. Boron nitride; B. Nanotubes; C. Field emission

  19. Production of defects in hexagonal boron nitride monolayer under ion irradiation O. Lehtinen a,

    E-Print Network [OSTI]

    Krasheninnikov, Arkady V.

    Production of defects in hexagonal boron nitride monolayer under ion irradiation O. Lehtinen a, , E: Hexagonal boron nitride monolayer Ion irradiation Defect a b s t r a c t Atomistic computer simulations monolayer to irradiation with noble gas ions having energies from 35 eV up to 10 MeV. Probabilities

  20. Ultra-thin ohmic contacts for p-type nitride light emitting devices

    DOE Patents [OSTI]

    Raffetto, Mark (Raleigh, NC); Bharathan, Jayesh (Cary, NC); Haberern, Kevin (Cary, NC); Bergmann, Michael (Chapel Hill, NC); Emerson, David (Chapel Hill, NC); Ibbetson, James (Santa Barbara, CA); Li, Ting (Ventura, CA)

    2012-01-03

    A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.

  1. Pyrolysis approach to the synthesis of gallium nitride nanorods Wei-Qiang Han and Alex Zettla)

    E-Print Network [OSTI]

    Zettl, Alex

    Pyrolysis approach to the synthesis of gallium nitride nanorods Wei-Qiang Han and Alex Zettla for publication 26 October 2001 Herein we describe a pyrolysis route to the synthesis of gallium nitride GaN nanorods. GaN nanorods have been grown by the pyrolysis of gallium dimethylamide and ferrocene under

  2. Hard superconducting nitrides Xiao-Jia Chen*, Viktor V. Struzhkin*, Zhigang Wu*, Maddury Somayazulu

    E-Print Network [OSTI]

    Wu, Zhigang

    Hard superconducting nitrides Xiao-Jia Chen*, Viktor V. Struzhkin*, Zhigang Wu*, Maddury Somayazulu, and hardness of selected superconducting transition-metal nitrides reveals inter- esting correlations among with the neutron scattering data. The cubic -NbN superconducting phase possesses a bulk modulus of 348 GPa

  3. David Niedzwiecki 3/2/2012 2:37:42 PM Protocol for Ultrathin Nitride Membranes

    E-Print Network [OSTI]

    Movileanu, Liviu

    as the thickness of the oxide layer. Patterning of TEM grid pattern: -Coat the wafer using S1813 photoresist using of the wafer to the other. These squares are free- standing oxide and nitride. The oxide layer underneath effective. -Use the Oxford 81 to remove about half of the oxide layer by placing the wafer nitride- side

  4. Tunneling characteristics in chemical vapor deposited graphene hexagonal boron nitride graphene junctions

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Tunneling characteristics in chemical vapor deposited graphene ­ hexagonal boron nitride ­ graphene junctions T. Roy1 , L. Liu2 , S. de la Barrera,3 B. Chakrabarti1,4 , Z. R. Hesabi1 , C. A. Joiner1 Abstract: Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate

  5. Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes

    E-Print Network [OSTI]

    Gilchrist, James F.

    Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes, IEEE DOI: 10.1109/JPHOT.2011.2150745 1943-0655/$26.00 ©2011 IEEE #12;Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect

  6. Effect of swift heavy ion irradiations in polycrystalline aluminum nitride J.C. Nappa,*

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    conductivity, aluminum nitride may be a serious candidate as fuel coating for the Gas Fast Reactor. However-temperature (1100-1300 K). These working conditions led to the selection of non-oxide refractory ceramics as fuel coating; the remarkable thermo-mechanical properties of carbides and nitrides make them great candidates

  7. Thermo-chemical Modelling of Uranium-free Nitride Fuels Mikael JOLKKONEN1;;y

    E-Print Network [OSTI]

    Haviland, David

    be applied to modelling of oxide and carbide fuels as well. In this paper we give a brief introductionThermo-chemical Modelling of Uranium-free Nitride Fuels Mikael JOLKKONEN1;Ã;y , Marco STREIT2 and accepted December 22, 2003) A production process for americium-bearing, uranium-free nitride fuels

  8. Super hard cubic phases of period VI transition metal nitrides: First principles investigation

    E-Print Network [OSTI]

    Khare, Sanjay V.

    and shear modulus for stable phases, potential hard coating materials for cutting tools have been identified July 2008 Keywords: Coatings Elastic properties Hardness Nitrides We report a systematic study B.V. All rights reserved. 1. Introduction Hard coatings of many transition metal nitrides have

  9. Iron-based alloy and nitridation treatment for PEM fuel cell bipolar plates

    DOE Patents [OSTI]

    Brady, Michael P. (Oak Ridge, TN) [Oak Ridge, TN; Yang, Bing (Oak Ridge, TN) [Oak Ridge, TN; Maziasz, Philip J. (Oak Ridge, TN) [Oak Ridge, TN

    2010-11-09

    A corrosion resistant electrically conductive component that can be used as a bipolar plate in a PEM fuel cell application is composed of an alloy substrate which has 10-30 wt. % Cr, 0.5 to 7 wt. % V, and base metal being Fe, and a continuous surface layer of chromium nitride and vanadium nitride essentially free of base metal. A oxide layer of chromium vanadium oxide can be disposed between the alloy substrate and the continuous surface nitride layer. A method to prepare the corrosion resistant electrically conductive component involves a two-step nitridization sequence by exposing the alloy to a oxygen containing gas at an elevated temperature, and subsequently exposing the alloy to an oxygen free nitrogen containing gas at an elevated temperature to yield a component where a continuous chromium nitride layer free of iron has formed at the surface.

  10. Nitrided iron catalysts for the Fischer-Tropsch synthesis in the eighties

    SciTech Connect (OSTI)

    Anderson, R.B.

    1980-01-01

    Nitrided iron catalysts are active and durable and have an unusal selectivity. They do not produce significant amounts of wax, which should be advantageous in situations where gasoline is the desired product. The low yield of wax permits operation of nitrided iron in fluidized fixed-bed or entrained reactors at 230 to 255/sup 0/C. Conventional reduced iron catalysts in these reactors must be operated at about 325/sup 0/C to prevent formation of higher hydrocarbon that leads to agglomeration of the fluidized particles. At 325/sup 0/C carbon deposition and other processes leading to catalyst deterioration proceed rapidly. The yields of methane and ethane from nitrided iron are larger than desired for most purposes. Possibly promoters may be found to improve the selectivity of nitrided iron catalysts. The Bureau of Mines did not conduct a systematic catalyst development program on iron nitrides. (DP) 5 fgures, 6 tables.

  11. Au-free Ohmic Contacts to Gallium Nitride and Graphene 

    E-Print Network [OSTI]

    Ravikirthi, Pradhyumna

    2014-08-10

    -sputtered contact. 20 3. AU-FREE SCHEME FOR GALLIUM NITRIDE 3.1. Survey of Au-free contacts in literature and scope for improvement For n-type GaN, it was observed that aluminium and gold form poor ohmic contacts (resistances in the order of 10-3 ?/cm2...] used Ti/Al and found better results for ohmic resistance compared to GaN[17]. However, Ti/Al contacts lost its stability at high temperatures due to formation of aluminium lumps on the surface, increasing its roughness and resistance. Fan et al [20...

  12. Boron nitride nanosheets as oxygen-atom corrosion protective coatings

    SciTech Connect (OSTI)

    Yi, Min; Shen, Zhigang; Zhao, Xiaohu; Liang, Shuaishuai; Liu, Lei

    2014-04-07

    The research of two-dimensional nanomaterials for anticorrosion applications is just recently burgeoning. Herein, we demonstrate the boron nitride nanosheets (BNNSs) coatings for protecting polymer from oxygen-atom corrosion. High-quality BNNSs, which are produced by an effective fluid dynamics method with multiple exfoliation mechanisms, can be assembled into coatings with controlled thickness by vacuum filtration. After exposed in atom oxygen, the naked polymer is severely corroded with remarkable mass loss, while the BNNSs-coated polymer remains intact. Barrier and bonding effects of the BNNSs are responsible for the coating's protective performance. These preliminary yet reproducible results pave a way for resisting oxygen-atom corrosion.

  13. Preparation of superhydrophobic nanodiamond and cubic boron nitride films

    SciTech Connect (OSTI)

    Zhou, Y. B.; Liu, W. M.; Wang, P. F.; Yang, Y.; Ye, Q.; He, B.; Pan, X. J.; Zhang, W. J.; Bello, I.; Lee, S. T.; Zou, Y. S.

    2010-09-27

    Superhydrophobic surfaces were achieved on the hardest and the second hardest materials, diamond and cubic boron nitride (cBN) films. Various surface nanostructures of nanocrystalline diamond (ND) and cBN films were constructed by carrying out bias-assisted reactive ion etching in hydrogen/argon plasmas; and it is shown that surface nanostructuring may enhance dramatically the hydrophobicity of ND and cBN films. Together with surface fluorination, superhydrophobic ND and cBN surfaces with a contact angle greater than 150 deg. and a sliding angle smaller than 10 deg. were demonstrated. The origin of hydrophobicity enhancement is discussed based on the Cassie model.

  14. Field emission characteristics from graphene on hexagonal boron nitride

    SciTech Connect (OSTI)

    Yamada, Takatoshi, E-mail: takatoshi-yamada@aist.go.jp [National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Masuzawa, Tomoaki; Ebisudani, Taishi; Okano, Ken [International Christian University, 3-10-2 Osawa, Mitaka, Tokyo 181-8585 (Japan); Taniguchi, Takashi [National Institute for Material Science (NIMS), 1-1-1 Namiki, Tsukuba 305-0044 (Japan)

    2014-06-02

    An attempt has been made to utilize uniquely high electron mobility of graphene on hexagonal boron nitride (h-BN) to electron emitter. The field emission property of graphene/h-BN/Si structure has shown enhanced threshold voltage and emission current, both of which are key to develop novel vacuum nanoelectronics devices. The field emission property was discussed along with the electronic structure of graphene investigated by Fowler-Nordheim plot and ultraviolet photoelectron spectroscopy. The result suggested that transferring graphene on h-BN modified its work function, which changed field emission mechanism. Our report opens up a possibility of graphene-based vacuum nanoelectronics devices with tuned work function.

  15. Method of nitriding niobium to form a superconducting surface

    DOE Patents [OSTI]

    Kelley, Michael J.; Klopf, John Michael; Singaravelu, Senthilaraja

    2014-08-19

    A method of forming a delta niobium nitride .delta.-NbN layer on the surface of a niobium object including cleaning the surface of the niobium object; providing a treatment chamber; placing the niobium object in the treatment chamber; evacuating the chamber; passing pure nitrogen into the treatment chamber; focusing a laser spot on the niobium object; delivering laser fluences at the laser spot until the surface of the niobium object reaches above its boiling temperature; and rastering the laser spot over the surface of the niobium object.

  16. Nitride and Oxynitride Based Phosphors for Solid State Lighting

    SciTech Connect (OSTI)

    Tian, Yongchi

    2011-10-15

    The objective of the project is to advance the technology of the Lightscape Materials Inc. (Lightscape) proprietary nitride and oxynitride phosphors for solid state lighting (SSL) from the current level of maturity of applied research to advanced engineering development. This objective will be accomplished by optimizing the novel nitride and oxynitride phosphors, whose formulations are listed in Table 1, and establishing cost-effective preparation processes for the phosphors. The target performances of the phosphors are: • High luminescence efficiency: Quantum Yield = 90%. • Superior thermal stability of luminescence: Thermal Quenching Loss <10% at 150 °C. • Superior environmental stability: Luminescence Maintenance >90% after 5,000 hours at 85 °C and 85% relative humidity. • Scattering loss <10%. • Cost-effective preparation processes. The resulting phosphor materials and their preparation processes are anticipated to be a drop-in component for product development paths undertaken by LED lamp makers in the SSL industry. Upon program completion, Lightscape will target market insertion that enables high efficacy, high color rendering index (CRI), high thermal stability and long lifetime LED-based lighting products for general illumination that realizes substantial energy savings.

  17. Radiation tolerance of piezoelectric bulk single-crystal aluminum nitride

    SciTech Connect (OSTI)

    David A. Parks; Bernhard R. Tittmann

    2014-07-01

    For practical use in harsh radiation environments, we pose selection criteria for piezoelectric materials for nondestructive evaluation (NDE) and material characterization. Using these criteria, piezoelectric aluminum nitride is shown to be an excellent candidate. The results of tests on an aluminumnitride-based transducer operating in a nuclear reactor are also presented. We demonstrate the tolerance of single-crystal piezoelectric aluminum nitride after fast and thermal neutron fluences of 1.85 × 1018 neutron/cm2 and 5.8 × 1018 neutron/cm2, respectively, and a gamma dose of 26.8 MGy. The radiation hardness of AlN is most evident from the unaltered piezoelectric coefficient d33, which measured 5.5 pC/N after a fast and thermal neutron exposure in a nuclear reactor core for over 120 MWh, in agreement with the published literature value. The results offer potential for improving reactor safety and furthering the understanding of radiation effects on materials by enabling structural health monitoring and NDE in spite of the high levels of radiation and high temperatures, which are known to destroy typical commercial ultrasonic transducers.

  18. High upper critical field in disordered niobium nitride superconductor

    SciTech Connect (OSTI)

    Baskaran, R., E-mail: baskaran@igcar.gov.in; Thanikai Arasu, A. V.; Amaladass, E. P.; Janawadkar, M. P. [Materials Science Group, IGCAR, Kalpakkam-603102 (India)

    2014-10-28

    Superconducting Niobium Nitride thin films have been deposited on glass, aluminum nitride buffered glass, and oxidized silicon substrates by reactive DC magnetron sputtering at ambient substrate temperatures. The crystal structure of these thin films has been determined to be cubic fcc B1 structure by Glancing Incidence X-Ray Diffraction analysis. The superconducting transition temperatures of the thin films were measured to be greater than 11.6?K with a maximum of 13.4?K. The negative temperature coefficient of resistance observed in these thin films indicates the presence of disorder. Magneto-resistance measurements have been carried out on these thin films patterned into standard four probe geometry upto a maximum magnetic field of 12?T for two films and upto 15?T for the other two films. The dependence of transition temperature on the applied field is analyzed to estimate the upper critical field. The upper critical field for most of the films was estimated to exceed 35?T, while one of the most disordered films had an estimated upper critical field greater than 70?T.

  19. Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions

    SciTech Connect (OSTI)

    Roy, T.; Hesabi, Z. R.; Joiner, C. A.; Vogel, E. M. [School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332 (United States); Liu, L.; Gu, G. [Department of Electrical Engineering and Computer Science, University of Tennessee, 1520 Middle Drive, Knoxville, Tennessee 37996 (United States); Barrera, S. de la; Feenstra, R. M. [Department of Physics, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania 15213 (United States); Chakrabarti, B. [School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Rd., Richardson, Texas 75080 (United States)

    2014-03-24

    Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene–hexagonal boron nitride–graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene–hexagonal boron nitride–graphene devices. Density-of-states features are observed in the tunneling characteristics of the devices, although without large resonant peaks that would arise from lateral momentum conservation. The lack of distinct resonant behavior is attributed to disorder in the devices, and a possible source of the disorder is discussed.

  20. Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

    E-Print Network [OSTI]

    Reid, Benjamin P. L.; Kocher, Claudius; Zhu, Tongtong; Oehler, Fabrice; Chan, Christopher C. S.; Oliver, Rachel A.; Taylor, Robert A.

    2015-04-28

    etch to ensure optical isolation of single QDs, with an average of ? 1 QD per aperture. The sample was mounted on a cold-finger within a continuous helium flow cryostat (Janis ST-500). A feedback loop temperature controller (Lakeshore 331) was used... ) and detected by a Peltier cooled Si-based charge-coupled device. Polarization dependent PL spectra were taken by placing a Glan-Thompson polarizer and a ?/2 waveplate into the collection path. For every rotation of the polarizer through an angle ? from vertical...

  1. Sampling box

    DOE Patents [OSTI]

    Phillips, Terrance D. (617 Chestnut Ct., Aiken, SC 29803); Johnson, Craig (100 Midland Rd., Oak Ridge, TN 37831-0895)

    2000-01-01

    An air sampling box that uses a slidable filter tray and a removable filter cartridge to allow for the easy replacement of a filter which catches radioactive particles is disclosed.

  2. Proton exchange membrane fuel cells with chromium nitride nanocrystals as electrocatalysts

    E-Print Network [OSTI]

    Zhong, Hexiang; Chen, Xiaobo; Zhang, Huamin; Wang, Meiri; Mao, Samuel S.

    2007-01-01

    S. Srinivasan, V. Antonucci, Fuel Cells 1, 133 (2001). 15 Y.Proton exchange membrane fuel cells with chromium nitridePolymer electrolyte membrane fuel cells (PEMFCs) are energy

  3. Photon-induced tunneling in graphene-boron nitride-graphene heterostructures

    E-Print Network [OSTI]

    Nair, Nityan

    2013-01-01

    Graphene is a material that has generated much interest due to its many unique electronic and optical properties. In this work, we present optoelectronic measurements performed on ultrathin graphene-boron nitride-graphene ...

  4. Method of nitriding, carburizing, or oxidizing refractory metal articles using microwaves

    DOE Patents [OSTI]

    Holcombe, Cressie E. (Knoxville, TN); Dykes, Norman L. (Oak Ridge, TN); Tiegs, Terry N. (Lenoir City, TN)

    1992-01-01

    A method of nitriding an article of refractory-nitride-forming metal or metalloids. A consolidated metal or metalloid article is placed inside a microwave oven and nitrogen containing gas is introduced into the microwave oven. The metal or metalloid article is heated to a temperature sufficient to react the metal or metalloid with the nitrogen by applying a microwave energy within the microwave oven. The metal or metalloid article is maintained at that temperature for a period of time sufficient to convert the article of metal or metalloid to an article of refractory nitride. in addition, a method of applying a coating, such as a coating of an oxide, a carbide, or a carbo-nitride, to an article of metal or metalloid by microwave heating.

  5. Single-Crystalline Mesoporous Molybdenum Nitride Nanowires with Improved Electrochemical Properties

    E-Print Network [OSTI]

    Cao, Guozhong

    , and catalytic properties.1­4 Among the transition-metal com- pounds, transition-metal nitrides are regarded, reforming catalyst, energy storage devices, and electrical applications.5­7 In particular, the molybdenum

  6. Electronic structure analyses and activation studies of a dinitrogen-derived terminal nitride of molybdenum

    E-Print Network [OSTI]

    Sceats, Emma Louise, 1978-

    2004-01-01

    Chapter 1: Complexes obtained by electrophilic attack on a dinitrogen-derived terminal molybdenum nitride: Electronic structure analysis by solid state CP/MAS ¹?N NMR in combination ... Chapter 2. Carbene chemistry in the ...

  7. Process for preparing transition metal nitrides and transition metal carbonitrides and their reaction intermediates

    DOE Patents [OSTI]

    Maya, Leon (Oak Ridge, TN)

    1988-05-24

    A process for making ammonolytic precursors to nitride and carbonitride ceramics. Extreme reaction conditions are not required and the precursor is a powder-like substance that produces ceramics of improved purity and morphology upon pyrolysis.

  8. Precursors in the preparation of transition metal nitrides and transition metal carbonitrides and their reaction intermediates

    DOE Patents [OSTI]

    Maya, Leon (Oak Ridge, TN)

    1991-01-01

    A process for making ammonolytic precursors to nitride and carbonitride ceramics. Extreme reaction conditions are not required and the precursor is a powder-like substance that produces ceramics of improved purity and morphology upon pyrolysis.

  9. Impurity-induced disorder in III-nitride materials and devices

    DOE Patents [OSTI]

    Wierer, Jr., Jonathan J; Allerman, Andrew A

    2014-11-25

    A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.

  10. The electron beam hole drilling of silicon nitride thin films

    SciTech Connect (OSTI)

    Howitt, D. G.; Chen, S. J.; Gierhart, B. C.; Smith, R. L.; Collins, S. D.

    2008-01-15

    The mechanism by which an intense electron beam can produce holes in thin films of silicon nitride has been investigated using a combination of in situ electron energy loss spectrometry and electron microscopy imaging. A brief review of electron beam interactions that lead to material loss in different materials is also presented. The loss of nitrogen and silicon decreases with decreasing beam energy and although still observable at a beam energy of 150 keV ceases completely at 120 keV. The linear behavior of the loss rate coupled with the energy dependency indicates that the process is primarily one of direct displacement, involving the sputtering of atoms from the back surface of the specimen with the rate controlling mechanism being the loss of nitrogen.

  11. High-Efficiency Nitride-Based Photonic Crystal Light Sources

    Broader source: Energy.gov [DOE]

    The University of California Santa Barbara (UCSB) is maximizing the efficiency of a white LED by enhancing the external quantum efficiency using photonic crystals to extract light that would normally be confined in a conventional structure. Ultimate efficiency can only be achieved by looking at the internal structure of light. To do this, UCSB is focusing on maximizing the light extraction efficiency and total light output from light engines driven by Gallium Nitride (GaN)-based LEDs. The challenge is to engineer large overlap (interaction) between modes and photonic crystals. The project is focused on achieving high extraction efficiency in LEDs, controlled directionality of emitted light, integrated design of vertical device structure, and nanoscale patterning of lateral structure.

  12. Enhanced thermoelectric properties in hybrid graphene-boron nitride nanoribbons

    E-Print Network [OSTI]

    Kaike Yang; Yuanping Chen; Roberto D'Agosta; Yuee Xie; Jianxin Zhong; Angel Rubio

    2012-04-06

    The thermoelectric properties of hybrid graphene-boron nitride nanoribbons (BCNNRs) are investigated using the non-equilibrium Green's function (NEGF) approach. We find that the thermoelectric figure of merit (ZT) can be remarkably enhanced by periodically embedding hexagonal BN (h-BN) into graphene nanoribbons (GNRs). Compared to pristine GNRs, the ZT for armchair-edged BCNNRs with width index 3p+2 is enhanced up to 10~20 times while the ZT of nanoribbons with other widths is enhanced just by 1.5~3 times. As for zigzag-edge nanoribbons, the ZT is enhanced up to 2~3 times. This improvement comes from the combined increase in the Seebeck coefficient and the reduction in the thermal conductivity outweighing the decrease in the electrical conductance. In addition, the effect of component ratio of h-BN on the thermoelectric transport properties is discussed. These results qualify BCNNRs as a promising candidate for building outstanding thermoelectric devices.

  13. Use of additives to improve microstructures and fracture resistance of silicon nitride ceramics

    DOE Patents [OSTI]

    Becher, Paul F. (Oak Ridge, TN); Lin, Hua-Tay (Oak Ridge, TN)

    2011-06-28

    A high-strength, fracture-resistant silicon nitride ceramic material that includes about 5 to about 75 wt-% of elongated reinforcing grains of beta-silicon nitride, about 20 to about 95 wt-% of fine grains of beta-silicon nitride, wherein the fine grains have a major axis of less than about 1 micron; and about 1 to about 15 wt-% of an amorphous intergranular phase comprising Si, N, O, a rare earth element and a secondary densification element. The elongated reinforcing grains have an aspect ratio of 2:1 or greater and a major axis measuring about 1 micron or greater. The elongated reinforcing grains are essentially isotropically oriented within the ceramic microstructure. The silicon nitride ceramic exhibits a room temperature flexure strength of 1,000 MPa or greater and a fracture toughness of 9 MPa-m.sup.(1/2) or greater. The silicon nitride ceramic exhibits a peak strength of 800 MPa or greater at 1200 degrees C. Also included are methods of making silicon nitride ceramic materials which exhibit the described high flexure strength and fracture-resistant values.

  14. Sampling apparatus

    DOE Patents [OSTI]

    Gordon, N.R.; King, L.L.; Jackson, P.O.; Zulich, A.W.

    1989-07-18

    A sampling apparatus is provided for sampling substances from solid surfaces. The apparatus includes first and second elongated tubular bodies which telescopically and sealingly join relative to one another. An absorbent pad is mounted to the end of a rod which is slidably received through a passageway in the end of one of the joined bodies. The rod is preferably slidably and rotatably received through the passageway, yet provides a selective fluid tight seal relative thereto. A recess is formed in the rod. When the recess and passageway are positioned to be coincident, fluid is permitted to flow through the passageway and around the rod. The pad is preferably laterally orientable relative to the rod and foldably retractable to within one of the bodies. A solvent is provided for wetting of the pad and solubilizing or suspending the material being sampled from a particular surface. 15 figs.

  15. Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices

    SciTech Connect (OSTI)

    Patibandla, Nag; Agrawal, Vivek

    2012-12-01

    Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry-leading uptime enabled in part by a novel in-situ cleaning process developed in this program.

  16. Process for producing silicon nitride based articles of high fracture toughness and strength

    DOE Patents [OSTI]

    Huckabee, M.; Buljan, S.T.; Neil, J.T.

    1991-09-10

    A process for producing a silicon nitride-based article of improved fracture toughness and strength is disclosed. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12 m[sup 2]/g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

  17. Process for producing silicon nitride based articles of high fracture toughness and strength

    DOE Patents [OSTI]

    Huckabee, Marvin (Marlboro, MA); Buljan, Sergej-Tomislav (Acton, MA); Neil, Jeffrey T. (Acton, MA)

    1991-01-01

    A process for producing a silicon nitride-based article of improved fracture toughness and strength. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 .mu.m and a surface area of about 8-12 m.sup.2 /g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 .mu.m and a surface area of about 2-4 m.sup.2 /g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

  18. Suitability of boron-nitride single-walled nanotubes as fluid-flow conduits in nano-valve applications

    E-Print Network [OSTI]

    Grujicic, Mica

    Suitability of boron-nitride single-walled nanotubes as fluid-flow conduits in nano-valve the suitability of boron-nitride single-walled nanotubes (SWNTs) as fluid- flow conduits in the nano-valve reserved. doi:10.1016/j.apsusc.2004.11.007 #12;control nano-valve based on a silicon nano-beam actuator

  19. Graphitic carbon nitride materials: variation of structure and morphology and their use as metal-free catalysts

    E-Print Network [OSTI]

    properties of carbon nitrides, they show unexpected catalytic activity for a variety of reactions, such as for the activation of benzene, trimerization reactions, and also the activation of carbon dioxide. Model calculationsGraphitic carbon nitride materials: variation of structure and morphology and their use as metal

  20. HIGH-EFFICIENCY NITRIDE-BASED SOLID-STATE LIGHTING

    SciTech Connect (OSTI)

    Paul T. Fini; Shuji Nakamura

    2003-10-30

    In this second annual report we summarize the progress in the second-year period of Department of Energy contract DE-FC26-01NT41203, entitled ''High- Efficiency Nitride-Based Solid-State Lighting''. The two teams, from the University of California at Santa Barbara (Principle Investigator: Dr. Shuji Nakamura) and Rensselaer Polytechnic Institute (led by Dr. N. Narendran), are pursuing the goals of this contract from thin film growth, characterization, and packaging standpoints. The UCSB team has recently made significant progress in the development of light-emitting diodes (LEDs) with AlGaN active regions emitting in the ultraviolet (UV), resonant-cavity LEDs (RCLEDs), as well as lateral epitaxial overgrowth (LEO) techniques to obtain large-area non-polar GaN films with low average dislocation density. The Rensselaer team has benchmarked the performance of commercially available LED systems and has also conducted efforts to develop an optimized RCLED packaging scheme, including development of advanced epoxy encapsulant chemistries.

  1. Silicon-Nitride Platform for Narrowband Entangled Photon Generation

    E-Print Network [OSTI]

    Sven Ramelow; Alessandro Farsi; Stéphane Clemmen; Daniel Orquiza; Kevin Luke; Michal Lipson; Alexander L. Gaeta

    2015-08-18

    CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in reducing their linear and nonlinear losses and in creating narrowband photons necessary for interfacing with quantum memories. Here we demonstrate the potential of the silicon nitride (Si3N4) platform by realizing an ultracompact, bright, entangled photon-pair source with selectable photon bandwidths down to 30 MHz, which is unprecedented for an integrated source. Leveraging Si3N4's moderate thermal expansion, simple temperature control of the chip enables precise wavelength stabilization and tunability without active control. Single-mode photon pairs at 1550 nm are generated at rates exceeding 107 s-1 with mW's of pump power and are used to produce time-bin entanglement. Moreover, Si3N4 allows for operation from the visible to the mid-IR, which make it highly promising for a wide range of integrated quantum photonics applications.

  2. Mechanical deformations of boron nitride nanotubes in crossed junctions

    SciTech Connect (OSTI)

    Zhao, Yadong; Chen, Xiaoming; Ke, Changhong; Park, Cheol; Fay, Catharine C.; Stupkiewicz, Stanislaw

    2014-04-28

    We present a study of the mechanical deformations of boron nitride nanotubes (BNNTs) in crossed junctions. The structure and deformation of the crossed tubes in the junction are characterized by using atomic force microscopy. Our results show that the total tube heights are reduced by 20%–33% at the crossed junctions formed by double-walled BNNTs with outer diameters in the range of 2.21–4.67?nm. The measured tube height reduction is found to be in a nearly linear relationship with the summation of the outer diameters of the two tubes forming the junction. The contact force between the two tubes in the junction is estimated based on contact mechanics theories and found to be within the range of 4.2–7.6 nN. The Young's modulus of BNNTs and their binding strengths with the substrate are quantified, based on the deformation profile of the upper tube in the junction, and are found to be 1.07?±?0.11 TPa and 0.18–0.29 nJ/m, respectively. Finally, we perform finite element simulations on the mechanical deformations of the crossed BNNT junctions. The numerical simulation results are consistent with both the experimental measurements and the analytical analysis. The results reported in this paper contribute to a better understanding of the structural and mechanical properties of BNNTs and to the pursuit of their applications.

  3. Silicon-Nitride Platform for Narrowband Entangled Photon Generation

    E-Print Network [OSTI]

    Ramelow, Sven; Clemmen, Stéphane; Orquiza, Daniel; Luke, Kevin; Lipson, Michal; Gaeta, Alexander L

    2015-01-01

    CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in reducing their linear and nonlinear losses and in creating narrowband photons necessary for interfacing with quantum memories. Here we demonstrate the potential of the silicon nitride (Si3N4) platform by realizing an ultracompact, bright, entangled photon-pair source with selectable photon bandwidths down to 30 MHz, which is unprecedented for an integrated source. Leveraging Si3N4's moderate thermal expansion, simple temperature control of the chip enables precise wavelength stabilization and tunability without active control. Single-mode photon pairs at 1550 nm are generated at rates exceeding 107 s-1 with mW's of pump power and are used to produce time-bin entanglement. Moreover, Si3N4 allows for operation from the visible to the mid-IR, which make it highly promising fo...

  4. High-Yield Synthesis of Stoichiometric Boron Nitride Nanostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Nocua, José E.; Piazza, Fabrice; Weiner, Brad R.; Morell, Gerardo

    2009-01-01

    Boron nitride (BN) nanostructures are structural analogues of carbon nanostructures but have completely different bonding character and structural defects. They are chemically inert, electrically insulating, and potentially important in mechanical applications that include the strengthening of light structural materials. These applications require the reliable production of bulk amounts of pure BN nanostructures in order to be able to reinforce large quantities of structural materials, hence the need for the development of high-yield synthesis methods of pure BN nanostructures. Using borazine ( B 3 N 3 H 6 ) asmore »chemical precursor and the hot-filament chemical vapor deposition (HFCVD) technique, pure BN nanostructures with cross-sectional sizes ranging between 20 and 50?nm were obtained, including nanoparticles and nanofibers. Their crystalline structure was characterized by (XRD), their morphology and nanostructure was examined by (SEM) and (TEM), while their chemical composition was studied by (EDS), (FTIR), (EELS), and (XPS). Taken altogether, the results indicate that all the material obtained is stoichiometric nanostructured BN with hexagonal and rhombohedral crystalline structure. « less

  5. Synthesis of fine-grained .alpha.-silicon nitride by a combustion process

    DOE Patents [OSTI]

    Holt, J. Birch (San Jose, CA); Kingman, Donald D. (Danville, CA); Bianchini, Gregory M. (Livermore, CA)

    1990-01-01

    A combustion synthesis process for the preparation of .alpha.-silicon nitride and composites thereof is disclosed. Preparation of the .alpha.-silicon nitride comprises the steps of dry mixing silicon powder with an alkali metal azide, such as sodium azide, cold-pressing the mixture into any desired shape, or loading the mixture into a fused, quartz crucible, loading the crucible into a combustion chamber, pressurizing the chamber with nitrogen and igniting the mixture using an igniter pellet. The method for the preparation of the composites comprises dry mixing silicon powder (Si) or SiO.sub.2, with a metal or metal oxide, adding a small amount of an alkali metal azide such as sodium azide, introducing the mixture into a suitable combustion chamber, pressurizing the combustion chamber with nitrogen, igniting the mixture within the combustion chamber, and isolating the .alpha.-silicon nitride formed as a reaction product.

  6. Nitrided iron catalysts for the Fischer-Tropsch synthesis in the eighties

    SciTech Connect (OSTI)

    Anderson, R.B.

    1980-01-01

    A survey covers the preparation and structure of nitrided iron catalysts and their activity, selectivity, and stability for the reaction of synthesis gas in comparison with iron catalysts pretreated by various other methods, as measured in laboratory reactors; a comparison of product distributions obtained in fluidized-bed, slurry, and oil-circulation fixed bed pilot plants with nitrided catalysts and by the Kellogg entrained catalyst process SASOL, which uses a reduced iron catalyst; and possible methods for refining the Fischer-Tropsch products from nitrided iron catalysts for producing gasoline, including bauxite treatment, the Mobil process for converting oxygenates to high-octane gasoline and C/sub 3/-C/sub 4/ olefins, and an alkylation-polymerization process for converting the C/sub 3/-C/sub 4/ fraction to high-octane blending stocks.

  7. The different adsorption mechanism of methane molecule onto a boron nitride and a graphene flakes

    SciTech Connect (OSTI)

    Seyed-Talebi, Seyedeh Mozhgan; Neek-Amal, M.

    2014-10-21

    Graphene and single layer hexagonal boron-nitride are two newly discovered 2D materials with wonderful physical properties. Using density functional theory, we study the adsorption mechanism of a methane molecule over a hexagonal flake of single layer hexagonal boron-nitride (h-BN) and compare the results with those of graphene. We found that independent of the used functional in our ab-initio calculations, the adsorption energy in the h-BN flake is larger than that for graphene. Despite of the adsorption energy profile of methane over a graphene flake, we show that there is a long range behavior beyond minimum energy in the adsorption energy of methane over h-BN flake. This result reveals the higher sensitivity of h-BN sheet to the adsorption of a typical closed shell molecule with respect to graphene. The latter gives insight in the recent experiments of graphene over hexagonal boron nitride.

  8. Alternative Liquid Fuel Effects on Cooled Silicon Nitride Marine Gas Turbine Airfoils

    SciTech Connect (OSTI)

    Holowczak, J.

    2002-03-01

    With prior support from the Office of Naval Research, DARPA, and U.S. Department of Energy, United Technologies is developing and engine environment testing what we believe to be the first internally cooled silicon nitride ceramic turbine vane in the United States. The vanes are being developed for the FT8, an aeroderivative stationary/marine gas turbine. The current effort resulted in further manufacturing and development and prototyping by two U.S. based gas turbine grade silicon nitride component manufacturers, preliminary development of both alumina, and YTRIA based environmental barrier coatings (EBC's) and testing or ceramic vanes with an EBC coating.

  9. Efficient boron nitride nanotube formation via combined laser-gas flow levitation

    DOE Patents [OSTI]

    Whitney, R. Roy; Jordan, Kevin; Smith, Michael

    2014-03-18

    A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z.

  10. Improved porous mixture of molybdenum nitride and tantalum oxide as a charge storage material

    SciTech Connect (OSTI)

    Deng, C.Z.; Pynenburg, R.A.J.; Tsai, K.C.

    1998-04-01

    High surface area {gamma}-molybdenum nitride has shown promise as a charge storage material. The addition of amorphous tantalum oxide to the molybdenum nitride system not only improves the film cohesion tremendously, but also widens the voltage stability window from 0.8 to 1.1 V. This occurs without adversely effecting the capacitance. Ultracapacitors, also called supercapacitors or electrochemical capacitors, are high power storage devices which have found application in products as diverse as cardiac pacemakers, cellular phones, electric vehicles, and air bags.

  11. High-Efficiency Nitride-Based Solid-State Lighting

    SciTech Connect (OSTI)

    Paul T. Fini; Shuji Nakamura

    2005-07-30

    In this final technical progress report we summarize research accomplished during Department of Energy contract DE-FC26-01NT41203, entitled ''High-Efficiency Nitride-Based Solid-State Lighting''. Two teams, from the University of California at Santa Barbara (Principle Investigator: Dr. Shuji Nakamura) and the Lighting Research Center at Rensselaer Polytechnic Institute (led by Dr. N. Narendran), pursued the goals of this contract from thin film growth, characterization, and packaging/luminaire design standpoints. The UCSB team initially pursued the development of blue gallium nitride (GaN)-based vertical-cavity surface-emitting lasers, as well as ultraviolet GaN-based light emitting diodes (LEDs). In Year 2, the emphasis shifted to resonant-cavity light emitting diodes, also known as micro-cavity LEDs when extremely thin device cavities are fabricated. These devices have very directional emission and higher light extraction efficiency than conventional LEDs. Via the optimization of thin-film growth and refinement of device processing, we decreased the total cavity thickness to less than 1 {micro}m, such that micro-cavity effects were clearly observed and a light extraction efficiency of over 10% was reached. We also began the development of photonic crystals for increased light extraction, in particular for so-called ''guided modes'' which would otherwise propagate laterally in the device and be re-absorbed. Finally, we pursued the growth of smooth, high-quality nonpolar a-plane and m-plane GaN films, as well as blue light emitting diodes on these novel films. Initial nonpolar LEDs showed the expected behavior of negligible peak wavelength shift with increasing drive current. M-plane LEDs in particular show promise, as unpackaged devices had unsaturated optical output power of {approx} 3 mW at 200 mA drive current. The LRC's tasks were aimed at developing the subcomponents necessary for packaging UCSB's light emitting diodes, and packaging them to produce a white light fixture. During the third and final year of the project, the LRC team investigated alternate packaging methods for the white LED device to achieve at least 25 percent more luminous efficacy than traditional white LEDs; conducted optical ray-tracing analyses and human factors studies to determine the best form factor for the white light source under development, in terms of high luminous efficacy and greater acceptance by subjects; and developed a new die encapsulant using silicone-epoxy resins that showed less yellowing and slower degradation. At the conclusion of this project, the LRC demonstrated a new packaging method, called scattered photon extraction (SPE), that produced an average luminous flux and corresponding average efficacy of 90.7 lm and 36.3 lm/W, respectively, compared with 56.5 lm and 22.6 lm/W for a similar commercial white LED package. At low currents, the SPE package emitted white light with an efficacy of over 80 lm/W and had chromaticity values very close to the blackbody locus. The SPE package showed an overall improvement of 61% for this particular comparison, exceeding the LRC's third-year goal of 25% improvement.

  12. Anisotropic Hexagonal Boron Nitride Nanomaterials - Synthesis and Applications

    SciTech Connect (OSTI)

    Han,W.Q.

    2008-08-01

    Boron nitride (BN) is a synthetic binary compound located between III and V group elements in the Periodic Table. However, its properties, in terms of polymorphism and mechanical characteristics, are rather close to those of carbon compared with other III-V compounds, such as gallium nitride. BN crystallizes into a layered or a tetrahedrally linked structure, like those of graphite and diamond, respectively, depending on the conditions of its preparation, especially the pressure applied. Such correspondence between BN and carbon readily can be understood from their isoelectronic structures [1, 2]. On the other hand, in contrast to graphite, layered BN is transparent and is an insulator. This material has attracted great interest because, similar to carbon, it exists in various polymorphic forms exhibiting very different properties; however, these forms do not correspond strictly to those of carbon. Crystallographically, BN is classified into four polymorphic forms: Hexagonal BN (h-BN) (Figure 1(b)); rhombohedral BN (r-BN); cubic BN (c-BN); and wurtzite BN (w-BN). BN does not occur in nature. In 1842, Balmain [3] obtained BN as a reaction product between molten boric oxide and potassium cyanide under atmospheric pressure. Thereafter, many methods for its synthesis were reported. h-BN and r-BN are formed under ambient pressure. c-BN is synthesized from h-BN under high pressure at high temperature while w-BN is prepared from h-BN under high pressure at room temperature [1]. Each BN layer consists of stacks of hexagonal plate-like units of boron and nitrogen atoms linked by SP{sup 2} hybridized orbits and held together mainly by Van der Waals force (Fig 1(b)). The hexagonal polymorph has two-layered repeating units: AA'AA'... that differ from those in graphite: ABAB... (Figure 1(a)). Within the layers of h-BN there is coincidence between the same phases of the hexagons, although the boron atoms and nitrogen atoms are alternatively located along the c-axis. The rhombohedral system consists of three-layered units: ABCABC..., whose honeycomb layers are arranged in a shifted phase, like as those of graphite. Reflecting its weak interlayer bond, the h-BN can be cleaved easily along its layers, and hence, is widely used as a lubricant material. The material is stable up to a high temperature of 2300 C before decomposition sets in [2] does not fuse a nitrogen atmosphere of 1 atm, and thus, is applicable as a refractory material. Besides having such properties, similar to those of graphite, the material is transparent, and acts as a good electric insulator, especially at high temperatures (10{sup 6} {Omega}m at 1000 C) [1]. c-BN and w-BN are tetrahedrally linked BN. The former has a cubic sphalerite-type structure, and the latter has a hexagonal wurtzite-type structure. c-BN is the second hardest known material (the hardest is diamond), the so-called white diamond. It is used mainly for grinding and cutting industrial ferrous materials because it does not react with molten iron, nickel, and related alloys at high temperatures whereas diamond does [1]. It displays the second highest thermal conductivity (6-9 W/cm.deg) after diamond. This chapter focuses principally upon information about h-BN nanomaterials, mainly BN nanotubes (BNNTs), porous BN, mono- and few-layer-BN sheets. There are good reviews book chapters about c-BN in [1, 4-6].

  13. Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces

    SciTech Connect (OSTI)

    King, Sean W., E-mail: sean.king@intel.com; Davis, Robert F. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Nemanich, Robert J. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-09-01

    The adsorption and desorption of halogen and other gaseous species from surfaces is a key fundamental process for both wet chemical and dry plasma etch and clean processes utilized in nanoelectronic fabrication processes. Therefore, to increase the fundamental understanding of these processes with regard to aluminum nitride (AlN) surfaces, temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy (XPS) have been utilized to investigate the desorption kinetics of water (H{sub 2}O), fluorine (F{sub 2}), hydrogen (H{sub 2}), hydrogen fluoride (HF), and other related species from aluminum nitride thin film surfaces treated with an aqueous solution of buffered hydrogen fluoride (BHF) diluted in methanol (CH{sub 3}OH). Pre-TPD XPS measurements of the CH{sub 3}OH:BHF treated AlN surfaces showed the presence of a variety of Al-F, N-F, Al-O, Al-OH, C-H, and C-O surfaces species in addition to Al-N bonding from the AlN thin film. The primary species observed desorbing from these same surfaces during TPD measurements included H{sub 2}, H{sub 2}O, HF, F{sub 2}, and CH{sub 3}OH with some evidence for nitrogen (N{sub 2}) and ammonia (NH{sub 3}) desorption as well. For H{sub 2}O, two desorption peaks with second order kinetics were observed at 195 and 460?°C with activation energies (E{sub d}) of 51?±?3 and 87?±?5?kJ/mol, respectively. Desorption of HF similarly exhibited second order kinetics with a peak temperature of 475?°C and E{sub d} of 110?±?5?kJ/mol. The TPD spectra for F{sub 2} exhibited two peaks at 485 and 585?°C with second order kinetics and E{sub d} of 62?±?3 and 270?±?10?kJ/mol, respectively. These values are in excellent agreement with previous E{sub d} measurements for desorption of H{sub 2}O from SiO{sub 2} and AlF{sub x} from AlN surfaces, respectively. The F{sub 2} desorption is therefore attributed to fragmentation of AlF{sub x} species in the mass spectrometer ionizer. H{sub 2} desorption exhibited an additional high temperature peak at 910?°C with E{sub d}?=?370?±?10?kJ/mol that is consistent with both the dehydrogenation of surface AlOH species and H{sub 2} assisted sublimation of AlN. Similarly, N{sub 2} exhibited a similar higher temperature desorption peak with E{sub d}?=?535?±?40?kJ/mol that is consistent with the activation energy for direct sublimation of AlN.

  14. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    epitaxial growth of indium gallium nitride (InGaN) layers capable of producing high-efficiency LEDs when combined with chip-on-board packaging techniques. The proposed...

  15. Sandia Energy - Sandia Develops a Synthesis of Quantum Dots that...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    that Increases the Quantum Yield to 95.5% White light-emitting diodes (LEDs) based on blue indium-gallium-nitride (InGaN) LEDs that excite yellow-green-emitting...

  16. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    SciTech Connect (OSTI)

    Yang, Tsung-Jui; Wu, Yuh-Renn; Shivaraman, Ravi; Speck, James S.

    2014-09-21

    In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

  17. Real-time synchrotron x-ray studies of low- and high-temperature nitridation of c-plane sapphire

    SciTech Connect (OSTI)

    Wang Yiyi; Oezcan, Ahmet S.; Ludwig, Karl F. Jr. [Physics Department, Boston University, Boston, Massachusetts 02215 (United States); Oezaydin, Goezde [Department of Aerospace and Mechanical Engineering, Boston University, Boston, Massachusetts 02215 (United States); Bhattacharyya, Anirban; Moustakas, Theodore D. [Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215 (United States); Zhou, Hua; Headrick, Randall L. [Department of Physics, University of Vermont, Burlington, Vermont 05405 (United States); Siddons, D. Peter [National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973 (United States)

    2006-12-15

    The plasma nitridation kinetics of c-plane sapphire at both low (200-300 deg. C) and high (750 deg. C) substrate temperatures was examined using grazing-incidence real-time x-ray diffraction, in situ x-ray reflection and in situ reflection high-energy electron diffraction (RHEED). These monitored the evolution of the nitride thickness, strain, and surface structure during nitridation. The evolution of the AlN(1010) peak showed that the heteroepitaxial strain in the first layer of nitride is already significantly relaxed relative to the substrate. Subsequent layers grow with increasing relaxation. In both the high- and low-temperature nitridation cases, the results suggest that the early stage nitridation is governed by a complex nucleation and growth process. Nitridation at both temperatures apparently proceeds in a two-dimensional growth mode with the initial nucleating islands consisting of several monolayers which grow laterally. At low temperature the growth slows or even stops after impingement of the nucleating islands covering the surface, possibly due to low diffusivities through the existing layer. Initial formation and growth rates of nucleating islands at high temperatures are comparable to those at low temperatures, but subsequent growth into the substrate is significantly enhanced over the low temperature case, consistent with activation energies of 0.1-0.25 eV.

  18. Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b , Sarah R passivation of Ge(100) surface via formation of Ge-N and Ge-O surface species was studied using scanning cyclotron resonance (ECR) plasma source formed an ordered Ge-N structure on a Ge(100) surface at 500o C. DFT

  19. Epitaxial ternary nitride thin films prepared by a chemical solution method

    SciTech Connect (OSTI)

    Luo, Hongmei [Los Alamos National Laboratory; Feldmann, David M [Los Alamos National Laboratory; Wang, Haiyan [TEXAS A& M; Bi, Zhenxing [TEXAS A& M

    2008-01-01

    It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

  20. Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

    E-Print Network [OSTI]

    Rogers, John A.

    -state lighting Hoon-sik Kima,1 , Eric Bruecknerb,1 , Jizhou Songc,1 , Yuhang Lid,e , Seok Kima , Chaofeng Lud with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to their potential as replacements this materials technology into light- ing modules that manage light conversion, extraction, and distri- bution

  1. Plasma nitridation of thin Si layers for GaAs dielectrics D. M. Diatezua,b)

    E-Print Network [OSTI]

    Rockett, Angus

    logarithmically with time. A model based on electron tunneling is proposed to explain the results. Capacitance suc- cessful FETs without electron confinement in the ICL and with low midgap trap densities at the Ga to an electron cyclotron resonance nitrogen plasma for varying times. The nitride thickness is shown to increase

  2. Light emission from silicon-rich nitride nanostructures L. Dal Negro,a

    E-Print Network [OSTI]

    Light emission from silicon-rich nitride nanostructures L. Dal Negro,a J. H. Yi, and L. C-infrared emission, large absorption/ emission Stokes shift, and nanosecond recombination. Our results are supported a crucial role in the emission mechanism of SRN films. Light emission from SRN systems can provide

  3. Theory of nitride oxide adsorption on transition metal (111) surfaces: a first-principles investigation

    E-Print Network [OSTI]

    Li, Weixue

    In this work, we report a density functional theory study of nitric oxide (NO) adsorption on close of NO adsorption on TM(111) surfaces in the submonolayer regime. 1. Introduction The catalytic reduction of NOxTheory of nitride oxide adsorption on transition metal (111) surfaces: a first

  4. Delta-phase manganese gallium on gallium nitride: a magnetically tunable spintronic system

    E-Print Network [OSTI]

    Delta-phase manganese gallium on gallium nitride: a magnetically tunable spintronic system Kangkang to their potential for novel spintronics applications such as spin light-emitting diodes[1] . Delta phase manganese slightly the Mn:Ga atom concentration. While many important spintronics properties, such as spin injection

  5. Investigation of mode coupling in normal-dispersion silicon nitride microresonators

    E-Print Network [OSTI]

    Purdue University

    -dispersion devices highlight mode interactions as a beneficial tool for comb initiation and pulse formation. © 2014Investigation of mode coupling in normal- dispersion silicon nitride microresonators for Kerr microresonators are the subject of intense study for potential applications ranging from short pulse generation

  6. Transport of multiply and highly charged ions through nanoscale apertures in silicon nitride membranes

    E-Print Network [OSTI]

    . PACS: 34.50.Dy Keywords: Slow highly charged ions; Capillary transmission; Charge exchange 1-the-barrier model (COB) [4­7]. The model can be used to estimate the critical distance for charge transfer dc exchange of multiply and highly charged ions for transmission of aper- tures in silicon nitride targets

  7. EVALUATION OF MECHANICAL RELIABILITY OF SILICON NITRIDE VANES AFTER FIELD TESTS IN AN INDUSTRIAL GAS TURBINE

    E-Print Network [OSTI]

    Pennycook, Steve

    GAS TURBINE H.-T. Lin and M. K. Ferber Metals and Ceramics Division Oak Ridge National Laboratory Oak field tests in an industrial gas turbine. Two commercially available silicon nitride vanes (i.e., AS800- temperature structural components in advanced gas turbines [1-5]. These materials offer the advantages of (1

  8. Evaluation of Mechanical Reliability of Silicon Nitride Vanes After Field Tests in an Industrial Gas Turbine

    E-Print Network [OSTI]

    Pennycook, Steve

    Vanes Was Successfully Completed by Rolls-Royce Allison in 1999 Model 501K Turbine Exxon - Mobile, AL Dovetail Region Production Billets #12;200 hr Interval - Exxon - 6/29/99 Phase I Testing of Silicon Nitride-sprayed Oxide-based EBC (~ 150-200 µm) 4 µm8 µm #12;Ceramic Vane Turbine Demonstration Details · Exxon turbine

  9. Electron cyclotron wave resonance plasma assisted deposition of cubic boron nitride thin films

    E-Print Network [OSTI]

    Zexian, Cao

    Electron cyclotron wave resonance plasma assisted deposition of cubic boron nitride thin films Z. X-pressure plasma source. The electron-cyclotron-wave resonance ECWR plasma served both to sputter the hBN target the high-resolution TEM image and the arc pattern of the 111 reflection from selected-area electron

  10. Materials Science and Engineering A259 (1999) 6572 Mechanical properties of oxidized silicon nitride ceramics

    E-Print Network [OSTI]

    Gubicza, Jenõ

    1999-01-01

    .g. hardness, elastic modulus) has not been studied. In the present paper the oxidation-induced changes of silicon nitride ceramics with four different compositions is studied. Room temperature values of bending strength and elastic modulus of the whole oxidized material and of hardness, the fracture toughness

  11. Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1

    E-Print Network [OSTI]

    Shepard, Kenneth

    Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1 , Cory Dean1, 10027 Tel: (212) 854-2529, Fax: (212) 932-9421, Email: shepard@ee.columbia.edu Abstract Graphene field of graphene, as the gate dielectric. The devices ex- hibit mobility values exceeding 10,000 cm2 /V

  12. Method of chemical vapor deposition of boron nitride using polymeric cyanoborane

    DOE Patents [OSTI]

    Maya, L.

    1994-06-14

    Polymeric cyanoborane is volatilized, decomposed by thermal or microwave plasma energy, and deposited on a substrate as an amorphous film containing boron, nitrogen and carbon. Residual carbon present in the film is removed by ammonia treatment at an increased temperature, producing an adherent, essentially stoichiometric boron nitride film. 11 figs.

  13. Multi-scale modelling of III-nitrides: from dislocations to the electronic structure

    E-Print Network [OSTI]

    Holec, David

    level modelling for the case of the critical thickness of thin epitaxial layers, and covers some issues of simulating the electronic structure of III-nitride alloys by means of the first principle methods. The first part of this work discusses several...

  14. Evaluation and silicon nitride internal combustion engine components. Final report, Phase I

    SciTech Connect (OSTI)

    Voldrich, W. [Allied-Signal Aerospace Co., Torrance, CA (United States). Garrett Ceramic Components Div.

    1992-04-01

    The feasibility of silicon nitride (Si{sub 3}N{sub 4}) use in internal combustion engines was studied by testing three different components for wear resistance and lower reciprocating mass. The information obtained from these preliminary spin rig and engine tests indicates several design changes are necessary to survive high-stress engine applications. The three silicon nitride components tested were valve spring retainers, tappet rollers, and fuel pump push rod ends. Garrett Ceramic Components` gas-pressure sinterable Si{sub 3}N{sub 4} (GS-44) was used to fabricate the above components. Components were final machined from densified blanks that had been green formed by isostatic pressing of GS-44 granules. Spin rig testing of the valve spring retainers indicated that these Si{sub 3}N{sub 4} components could survive at high RPM levels (9,500) when teamed with silicon nitride valves and lower spring tension than standard titanium components. Silicon nitride tappet rollers showed no wear on roller O.D. or I.D. surfaces, steel axles and lifters; however, due to the uncrowned design of these particular rollers the cam lobes indicated wear after spin rig testing. Fuel pump push rod ends were successful at reducing wear on the cam lobe and rod end when tested on spin rigs and in real-world race applications.

  15. Characterization of multilayer nitride coatings by electron microscopy and modulus mapping

    SciTech Connect (OSTI)

    Pemmasani, Sai Pramod [International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur P.O., Hyderabad — 500005 India (India); School of Engineering Sciences and Technology, University of Hyderabad, Gachibowli, Hyderabad — 500046 India (India); Rajulapati, Koteswararao V. [School of Engineering Sciences and Technology, University of Hyderabad, Gachibowli, Hyderabad — 500046 India (India); Ramakrishna, M.; Valleti, Krishna [International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur P.O., Hyderabad — 500005 India (India); Gundakaram, Ravi C., E-mail: ravi.gundakaram@arci.res.in [International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur P.O., Hyderabad — 500005 India (India); Joshi, Shrikant V. [International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur P.O., Hyderabad — 500005 India (India)

    2013-07-15

    This paper discusses multi-scale characterization of physical vapour deposited multilayer nitride coatings using a combination of electron microscopy and modulus mapping. Multilayer coatings with a triple layer structure based on TiAlN and nanocomposite nitrides with a nano-multilayered architecture were deposited by Cathodic arc deposition and detailed microstructural studies were carried out employing Energy Dispersive Spectroscopy, Electron Backscattered Diffraction, Focused Ion Beam and Cross sectional Transmission Electron Microscopy in order to identify the different phases and to study microstructural features of the various layers formed as a result of the deposition process. Modulus mapping was also performed to study the effect of varying composition on the moduli of the nano-multilayers within the triple layer coating by using a Scanning Probe Microscopy based technique. To the best of our knowledge, this is the first attempt on modulus mapping of cathodic arc deposited nitride multilayer coatings. This work demonstrates the application of Scanning Probe Microscopy based modulus mapping and electron microscopy for the study of coating properties and their relation to composition and microstructure. - Highlights: • Microstructure of a triple layer nitride coating studied at multiple length scales. • Phases identified by EDS, EBSD and SAED (TEM). • Nanolayered, nanocomposite structure of the coating studied using FIB and TEM. • Modulus mapping identified moduli variation even in a nani-multilayer architecture.

  16. Carbon-Doped Boron Nitride Nanomesh: Stability and Electronic Properties of Adsorbed Hydrogen and Oxygen

    E-Print Network [OSTI]

    Pandey, Ravi

    solutions for hydrogen storage. On the other hand, oxygen storage is also important in the energy industryCarbon-Doped Boron Nitride Nanomesh: Stability and Electronic Properties of Adsorbed Hydrogen, and at an intermediate siteis investigated with density functional theory. The calculated results find that atomic

  17. Measurements of thermal transport in low stress silicon nitride films W. Holmes,a)

    E-Print Network [OSTI]

    Richards, Paul L.

    Measurements of thermal transport in low stress silicon nitride films W. Holmes,a) J. M. Gildemeister, and P. L. Richardsb) Physics Department, University of California, Berkeley, California 94720 and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 V. Kotsuboc

  18. Alternated high-and low-pressure nitriding of austenitic stainless steel: Mechanisms and results

    E-Print Network [OSTI]

    Alternated high- and low-pressure nitriding of austenitic stainless steel: Mechanisms and results G a gas mixture of (N2 /H2):(50/50) in pressure, was applied to stainless-steel AISI 304. In the first penetrate far beyond the compound layer. These nitrogen atoms, uptaken into the austenitic stainless-steel

  19. Z .Surface and Coatings Technology 127 2000 260 265 Characterization of carbon nitride thin films deposited by

    E-Print Network [OSTI]

    Gao, Hongjun

    in the fields of condensed matter physics, material science, and chemistry. A vari- w xety of techniques 4 10 2. Experimental The carbon nitride thin films were deposited on Z .polished Si 100 in the microwave

  20. Materials Science and Engineering B78 (2000) 1115 On the structure and composition of crystalline carbon nitride

    E-Print Network [OSTI]

    Gao, Hongjun

    2000-01-01

    and properties of such a hypothetical material is also significant to research in the fields of condensed matter-ray diffraction (XRD) technique. 2. Experimental The carbon nitride thin films were deposited on polished Si(100

  1. Theoretical study of physisorption of nucleobases on boron nitride nanotubes: a new class of hybrid nano-biomaterials

    E-Print Network [OSTI]

    Pandey, Ravi

    nano-biomaterials This article has been downloaded from IOPscience. Please scroll down to see the full on boron nitride nanotubes: a new class of hybrid nano-biomaterials Saikat Mukhopadhyay1 , S Gowtham1

  2. Using Monte Carlo ray tracing simulations to model the quantum harmonic oscillator modes observed in uranium nitride

    SciTech Connect (OSTI)

    Lin, J. Y. Y. [California Institute of Technology, Pasadena] [California Institute of Technology, Pasadena; Aczel, Adam A [ORNL] [ORNL; Abernathy, Douglas L [ORNL] [ORNL; Nagler, Stephen E [ORNL] [ORNL; Buyers, W. J. L. [National Research Council of Canada] [National Research Council of Canada; Granroth, Garrett E [ORNL] [ORNL

    2014-01-01

    Recently an extended series of equally spaced vibrational modes was observed in uranium nitride (UN) by performing neutron spectroscopy measurements using the ARCS and SEQUOIA time-of- flight chopper spectrometers [A.A. Aczel et al, Nature Communications 3, 1124 (2012)]. These modes are well described by 3D isotropic quantum harmonic oscillator (QHO) behavior of the nitrogen atoms, but there are additional contributions to the scattering that complicate the measured response. In an effort to better characterize the observed neutron scattering spectrum of UN, we have performed Monte Carlo ray tracing simulations of the ARCS and SEQUOIA experiments with various sample kernels, accounting for the nitrogen QHO scattering, contributions that arise from the acoustic portion of the partial phonon density of states (PDOS), and multiple scattering. These simulations demonstrate that the U and N motions can be treated independently, and show that multiple scattering contributes an approximate Q-independent background to the spectrum at the oscillator mode positions. Temperature dependent studies of the lowest few oscillator modes have also been made with SEQUOIA, and our simulations indicate that the T-dependence of the scattering from these modes is strongly influenced by the uranium lattice.

  3. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    SciTech Connect (OSTI)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

    2014-04-15

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without breaking vacuum, and convenient visual access to the sample and tip inside a superconducting magnet cryostat. A sample/tip handling system is optimized for both the molecular beam epitaxy growth system and the scanning tunneling microscope system. The sample/tip handing system enables in situ STM studies on epitaxially grown samples, and tip exchange in the superconducting magnet cryostat. The hybrid molecular beam epitaxy and low temperature scanning tunneling microscopy system is capable of growing semiconductor-based hetero-structures with controlled accuracy down to a single atomic-layer and imaging them down to atomic resolution.

  4. A study into effects of CO{sub 2} laser melting of nitrided Ti-6Al-4V alloy

    SciTech Connect (OSTI)

    Mohammed, M.A. [Saudi Aramco, Dhahran (Saudi Arabia); Hashmi, M.S.J. [Dublin City Univ. (Ireland); Yilbas, B.S. [KFDUPM, Dhahran (Saudi Arabia)

    1997-10-01

    Multiple treatment of engineering surfaces can provide improved surface properties that cannot be obtained by a single surface treatment. Consequently, this study investigates the effects of laser melting on the microstructures of plasma nitrided Ti-6Al-4V alloy. The study consists of two parts. In the first part, governing equations pertinent to the laser melting process are developed, and temperature variation across the melted zone is predicted. In the second, an experiment is conducted to nitride the surface of the alloy through plasma nitriding process and to melt the plasma nitrided and the untreated alloy surfaces with a CO{sub 2} laser beam. The resulting metallurgical changes are examined using x-ray diffraction (XRD), energy-dispersive spectrometry (EDS), and scanning electron microscopy (SEM) techniques. It is shown that three distinct nitride layers are formed in the vicinity of the alloy surface prior to the laser melting process, and that after the melting process nitrided species are depleted while cellular and dendritic structures are formed. In addition, the structure consisting of transformed {beta} containing coarse and fine acicular {alpha} is observed in the melted regions.

  5. Structure analysis of aluminium silicon manganese nitride precipitates formed in grain-oriented electrical steels

    SciTech Connect (OSTI)

    Bernier, Nicolas, E-mail: n.bernier@yahoo.fr [OCAS N.V., ArcelorMittal Global R and D Gent, Pres. J.F. Kennedylaan 3, 9060 Zelzate (Belgium); Xhoffer, Chris [OCAS N.V., ArcelorMittal Global R and D Gent, Pres. J.F. Kennedylaan 3, 9060 Zelzate (Belgium); Van De Putte, Tom, E-mail: tom.vandeputte@arcelormittal.com [OCAS N.V., ArcelorMittal Global R and D Gent, Pres. J.F. Kennedylaan 3, 9060 Zelzate (Belgium); Galceran, Montserrat [Université Libre de Bruxelles, 4MAT (Materials Engineering, Characterization, Synthesis and Recycling), Avenue F.D. Roosevelt 50, 1050 Brussels (Belgium); CIC Energigune, Albert Einstein 48, 01510 Miñano (Álava) (Spain); Godet, Stéphane [Université Libre de Bruxelles, 4MAT (Materials Engineering, Characterization, Synthesis and Recycling), Avenue F.D. Roosevelt 50, 1050 Brussels (Belgium)

    2013-12-15

    We report a detailed structural and chemical characterisation of aluminium silicon manganese nitrides that act as grain growth inhibitors in industrially processed grain-oriented (GO) electrical steels. The compounds are characterised using energy dispersive X-ray spectrometry (EDX) and energy filtered transmission electron microscopy (EFTEM), while their crystal structures are analysed using X-ray diffraction (XRD) and TEM in electron diffraction (ED), dark-field, high-resolution and automated crystallographic orientation mapping (ACOM) modes. The chemical bonding character is determined using electron energy loss spectroscopy (EELS). Despite the wide variation in composition, all the precipitates exhibit a hexagonal close-packed (h.c.p.) crystal structure and lattice parameters of aluminium nitride. The EDX measurement of ? 900 stoichiometrically different precipitates indicates intermediate structures between pure aluminium nitride and pure silicon manganese nitride, with a constant Si/Mn atomic ratio of ? 4. It is demonstrated that aluminium and silicon are interchangeably precipitated with the same local arrangement, while both Mn{sup 2+} and Mn{sup 3+} are incorporated in the h.c.p. silicon nitride interstitial sites. The oxidation of the silicon manganese nitrides most likely originates from the incorporation of oxygen during the decarburisation annealing process, thus creating extended planar defects such as stacking faults and inversion domain boundaries. The chemical composition of the inhibitors may be written as (AlN){sub x}(SiMn{sub 0.25}N{sub y}O{sub z}){sub 1?x} with x ranging from 0 to 1. - Highlights: • We study the structure of (Al,Si,Mn)N inhibitors in grain oriented electrical steels. • Inhibitors have the hexagonal close-packed symmetry with lattice parameters of AlN. • Inhibitors are intermediate structures between pure AlN and (Si,Mn)N with Si/Mn ? 4. • Al and Si share the same local arrangement; Mn is incorporated in both Mn{sup 2+} and Mn{sup 3+}. • Oxygen incorporation is invoked to account for the thermal stability of (Al,Si,Mn)N.

  6. Phase transformations of nano-sized cubic boron nitride to white graphene and white graphite

    SciTech Connect (OSTI)

    Dang, Hongli; Liu, Yingdi; Xue, Wenhua; Anderson, Ryan S.; Sewell, Cody R. [Department of Physics and Engineering Physics, The University of Tulsa, Tulsa, Oklahoma 74104 (United States); Xue, Sha; Crunkleton, Daniel W. [Department of Chemical Engineering, The University of Tulsa, Tulsa, Oklahoma 74104 (United States); Institute of Alternate Energy, The University of Tulsa, Tulsa, Oklahoma 74104 (United States); Shen, Yaogen [Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Kowloon (Hong Kong); Wang, Sanwu, E-mail: sanwu-wang@utulsa.edu [Department of Physics and Engineering Physics, The University of Tulsa, Tulsa, Oklahoma 74104 (United States); Institute of Alternate Energy, The University of Tulsa, Tulsa, Oklahoma 74104 (United States)

    2014-03-03

    We report quantum-mechanical investigations that predict the formation of white graphene and nano-sized white graphite from the first-order phase transformations of nano-sized boron nitride thin-films. The phase transformations from the nano-sized diamond-like structure, when the thickness d?>?1.4?nm, to the energetically more stable nano-sized white graphite involve low activation energies of less than 1.0?eV. On the other hand, the diamond-like structure transforms spontaneously to white graphite when d???1.4?nm. In particular, the two-dimensional structure with single-layer boron nitride, the so-called white graphene, could be formed as a result of such transformation.

  7. High density hexagonal boron nitride prepared by hot isostatic pressing in refractory metal containers

    DOE Patents [OSTI]

    Hoenig, Clarence L. (Livermore, CA)

    1992-01-01

    Boron nitride powder with less than or equal to the oxygen content of starting powder (down to 0.5% or less) is hot isostatically pressed in a refractory metal container to produce hexagonal boron nitride with a bulk density greater than 2.0 g/cc. The refractory metal container is formed of tantalum, niobium, tungsten, molybdenum or alloys thereof in the form of a canister or alternatively plasma sprayed or chemical vapor deposited onto a powder compact. Hot isostatic pressing at 1800.degree. C. and 30 KSI (206.8 MPa) argon pressure for four hours produces a bulk density of 2.21 g/cc. Complex shapes can be made.

  8. Amber light-emitting diode comprising a group III-nitride nanowire active region

    DOE Patents [OSTI]

    Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

    2014-07-22

    A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

  9. Integrated rig for the production of boron nitride nanotubes via the pressurized vapor-condenser method

    DOE Patents [OSTI]

    Smith, Michael W; Jordan, Kevin C

    2014-03-25

    An integrated production apparatus for production of boron nitride nanotubes via the pressure vapor-condenser method. The apparatus comprises: a pressurized reaction chamber containing a continuously fed boron containing target having a boron target tip, a source of pressurized nitrogen and a moving belt condenser apparatus; a hutch chamber proximate the pressurized reaction chamber containing a target feed system and a laser beam and optics.

  10. Ligand-Based Reduction of CO2 to CO Mediated by an Anionic Niobium Nitride Complex

    E-Print Network [OSTI]

    Silvia, Jared Scott

    The terminal nitride anion complex [Na][N?Nb(N[tBu]Ar)3] ([Na][1], Ar = 3,5-Me2C6H3) reacts quantitatively with CO2 to give the carbamate complex [Na][O2CN?Nb(N[tBu]Ar)3] ([Na][O2C-1]). The structure of [Na][O2C-1] as the ...

  11. Dispersion engineered high-Q silicon Nitride Ring-Resonators via Atomic Layer Deposition

    E-Print Network [OSTI]

    Riemensberger, Johann; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

    2012-01-01

    We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition (ALD). Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. All results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

  12. MOCVD synthesis of group III-nitride heterostructure nanowires for solid-state lighting.

    SciTech Connect (OSTI)

    Wang, George T.; Creighton, James Randall; Talin, Albert Alec

    2006-11-01

    Solid-state lighting (SSL) technologies, based on semiconductor light emitting devices, have the potential to reduce worldwide electricity consumption by more than 10%, which could significantly reduce U.S. dependence on imported energy and improve energy security. The III-nitride (AlGaInN) materials system forms the foundation for white SSL and could cover a wide spectral range from the deep UV to the infrared. For this LDRD program, we have investigated the synthesis of single-crystalline III-nitride nanowires and heterostructure nanowires, which may possess unique optoelectronic properties. These novel structures could ultimately lead to the development of novel and highly efficient SSL nanodevice applications. GaN and III-nitride core-shell heterostructure nanowires were successfully synthesized by metal organic chemical vapor deposition (MOCVD) on two-inch wafer substrates. The effect of process conditions on nanowire growth was investigated, and characterization of the structural, optical, and electrical properties of the nanowires was also performed.

  13. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    SciTech Connect (OSTI)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  14. Power mixture and green body for producing silicon nitride base articles of high fracture toughness and strength

    DOE Patents [OSTI]

    Huckabee, M.L.; Buljan, S.T.; Neil, J.T.

    1991-09-17

    A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength are disclosed. The powder mixture includes (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12m[sup 2]g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder. No Drawings

  15. Process for the production of hydrogen and carbonyl sulfide from hydrogen sulfide and carbon monoxide using a metal boride, nitride, carbide and/or silicide catalyst

    SciTech Connect (OSTI)

    McGuiggan, M.F.; Kuch, P.L.

    1984-05-08

    Hydrogen and carbonyl sulfide are produced by a process comprising contacting gaseous hydrogen sulfide with gaseous carbon monoxide in the presence of a metal boride, carbide, nitride and/or silicide catalyst, such as titanium carbide, vanadium boride, manganese nitride or molybdenum silicide.

  16. Applicability of carbon and boron nitride nanotubes as biosensors: Effect of biomolecular adsorption on the transport properties of carbon and boron

    E-Print Network [OSTI]

    Pandey, Ravi

    Applicability of carbon and boron nitride nanotubes as biosensors: Effect of biomolecular;Applicability of carbon and boron nitride nanotubes as biosensors: Effect of biomolecular adsorption transport- ers,10 biosensors,11 and field effect transistors12 (FET) have been reported. DNA has also been

  17. Physics PhD scholarship available in one the worlds top 10 cities Scanning Tunneling Microscopy studies of rare earth nitrides and related materials

    E-Print Network [OSTI]

    Hickman, Mark

    studies of rare earth nitrides and related materials This is an opportunity to explore how new rare earth nitride materials can be made and how they can be probed using scanning tunneling microscopy. Scanning Tunneling Microscopy is a powerful tool to obtain both atomic resolution imaging of the surface of materials

  18. Si3N4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

    E-Print Network [OSTI]

    Rockett, Angus

    from XPS as a function of photoelectron takeoff angle, initially increased rapidly with nitridation either from the higher temperature or from nitridation of all of the Si, leaving the Si3N4 in direct contact with the GaAs. © 1998 American Vacuum Society. S0734-211X 98 00302-3 I. INTRODUCTION Ga

  19. Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

    E-Print Network [OSTI]

    Griffiths, J. T.; Zhu, T.; Oehler, F.; Emery, R. M.; Fu, W. Y.; Reid, B. P. L.; Taylor, R. A.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A.

    2014-12-12

    linewidth is limited by the resolution of the detection system. Time resolved PL studies have been used to measure the lifetimes to give an insight into the internal electric field. The samples were grown in a 6 × 2 in. Thomas Swan close-coupled showerhead... radius of 8 nm in tapping mode. A Gatan MonoCL4 system was used to study to the CL signal in a Phillips XL30s field emission scanning electron microscope (SEM) operated at 4 keV equipped with a liquid helium cold stage. Two-photon excitation µ...

  20. Strength and fatigue of NT551 silicon nitride and NT551 diesel exhaust valves

    SciTech Connect (OSTI)

    Andrews, M.J.; Werezczak, A.A.; Kirkland, T.P.; Breder, K.

    2000-02-01

    The content of this report is excerpted from Mark Andrew's Ph.D. Thesis (Andrews, 1999), which was funded by a DOE/OTT High Temperature Materials Laboratory Graduate Fellowship. It involves the characterization of NT551 and valves fabricated with it. The motivations behind using silicon nitride (Si{sub 3}N{sub 4}) as an exhaust valve for a diesel engine are presented in this section. There are several economic factors that have encouraged the design and implementation of ceramic components for internal combustion (IC) engines. The reasons for selecting the diesel engine valve for this are also presented.

  1. Silicon-nitride photonic circuits interfaced with monolayer MoS$_2$

    E-Print Network [OSTI]

    Wei, Guohua; Czaplewski, David A; Jung, Il Woong; Stern, Nathaniel P

    2015-01-01

    We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.

  2. Dual-pumped degenerate Kerr oscillator in a silicon nitride microresonator

    E-Print Network [OSTI]

    Okawachi, Yoshitomo; Luke, Kevin; Carvalho, Daniel O; Ramelow, Sven; Farsi, Alessandro; Lipson, Michal; Gaeta, Alexander L

    2015-01-01

    We demonstrate a degenerate parametric oscillator in a silicon-nitride microresonator. We use two frequency-detuned pump waves to perform parametric four-wave mixing and operate in the normal group-velocity dispersion regime to produce signal and idler fields that are frequency degenerate. Our theoretical modeling shows that this regime enables generation of bimodal phase states, analogous to the \\c{hi}(2)-based degenerate OPO. Our system offers potential for realization of CMOS-chip-based coherent optical computing and an all-optical quantum random number generator.

  3. Rain sampling device

    DOE Patents [OSTI]

    Nelson, D.A.; Tomich, S.D.; Glover, D.W.; Allen, E.V.; Hales, J.M.; Dana, M.T.

    1991-05-14

    The present invention constitutes a rain sampling device adapted for independent operation at locations remote from the user which allows rainfall to be sampled in accordance with any schedule desired by the user. The rain sampling device includes a mechanism for directing wet precipitation into a chamber, a chamber for temporarily holding the precipitation during the process of collection, a valve mechanism for controllably releasing samples of the precipitation from the chamber, a means for distributing the samples released from the holding chamber into vessels adapted for permanently retaining these samples, and an electrical mechanism for regulating the operation of the device. 11 figures.

  4. Rain sampling device

    DOE Patents [OSTI]

    Nelson, Danny A. (Richland, WA); Tomich, Stanley D. (Richland, WA); Glover, Donald W. (Prosser, WA); Allen, Errol V. (Benton City, WA); Hales, Jeremy M. (Kennewick, WA); Dana, Marshall T. (Richland, WA)

    1991-01-01

    The present invention constitutes a rain sampling device adapted for independent operation at locations remote from the user which allows rainfall to be sampled in accordance with any schedule desired by the user. The rain sampling device includes a mechanism for directing wet precipitation into a chamber, a chamber for temporarily holding the precipitation during the process of collection, a valve mechanism for controllably releasing samples of said precipitation from said chamber, a means for distributing the samples released from the holding chamber into vessels adapted for permanently retaining these samples, and an electrical mechanism for regulating the operation of the device.

  5. Growth and magnetic property of antiperovskite manganese nitride films doped with Cu by molecular beam epitaxy

    SciTech Connect (OSTI)

    Yu, Fengmei; Ren, Lizhu; Meng, Meng; Wang, Yunjia; Yang, Mei; Wu, Shuxiang; Li, Shuwei

    2014-04-07

    Manganese nitrides thin films on MgO (100) substrates with and without Cu-doping have been fabricated by plasma assisted molecular beam epitaxy. Antiperovskite compounds Mn{sub 3.6}Cu{sub 0.4}N have been grown in the case of Cu-doping, and the pure Mn{sub 3}N{sub 2} single crystal has been obtained without Cu-doping. The Mn{sub 3.6}Cu{sub 0.4}N exhibits ferrimagnetism, and the magnetization of Mn{sub 3.6}Cu{sub 0.4}N increases upon the temperature decreasing from 300?K to 5?K, similar to Mn{sub 4}N. The exchange bias (EB) effects emerge in the Mn{sub 3.6}Cu{sub 0.4}N films. The EB behavior is originated from the interfaces between ferrimagnetic Mn{sub 3.6}Cu{sub 0.4}N and antiferromagnetic metal Mn, which is verified to be formed by the data of x-ray photoelectron spectroscopy. The present results not only provide a strategy for producing functional antiperovskite manganese nitrides, but also shed promising light on fabricating the exchange bias part of spintronic devices.

  6. Critical dimension improvement of plasma enhanced chemical vapor deposition silicon nitride thin films in GaAs devices

    E-Print Network [OSTI]

    Shapira, Yoram

    , Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69978, Israel Abstract Silicon nitride thin films. This is important since GaAs processing does not tolerate higher temperatures. However, using hydride source gases and Engineering B102 (2003) 352Á/357 www.elsevier.com/locate/mseb 0921-5107/03/$ - see front matter # 2003

  7. Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition

    E-Print Network [OSTI]

    Dietz, Nikolaus

    pressure chemical vapor deposition R. P. Bhatta, B. D. Thoms,a A. Weerasekera, A. G. U. Perera, M. Alevli properties of InN layer grown by high pressure chemical vapor deposition have been studied by high-nitride alloys is challenging under low pressure process conditions due to higher equilibrium vapor pressure

  8. Power mixture and green body for producing silicon nitride base & articles of high fracture toughness and strength

    DOE Patents [OSTI]

    Huckabee, Marvin L. (Marlboro, MA); Buljan, Sergej-Tomislav (Acton, MA); Neil, Jeffrey T. (Acton, MA)

    1991-01-01

    A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength. The powder mixture includes 9a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon mitride powder of an average particle size of about 0.2 .mu.m and a surface area of about 8-12m.sup.2 g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 .mu.m and a surface area of about 2-4 m.sup.2 /g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified articel an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder.

  9. OXIDE / LPCVD NITRIDE STACKS ON SILICON: THE EFFECTS OF HIGH TEMPERATURE TREATMENTS ON BULK LIFETIME AND ON SURFACE PASSIVATION.

    E-Print Network [OSTI]

    for Sustainable Energy Systems, Engineering Department, The Australian National University, Acton 0200, Australia. ABSTRACT: Silicon dioxide / silicon nitride stacks are potentially useful for solar cell applications due significantly increased process flexibility and hence the realisation of novel cell structures. We used LPCVD

  10. GALLIUM NITRIDE INTEGRATED GAS/TEMPERATURE SENSORS FOR FUEL CELL SYSTEM MONITORING FOR HYDROGEN AND CARBON MONOXIDE

    E-Print Network [OSTI]

    GALLIUM NITRIDE INTEGRATED GAS/TEMPERATURE SENSORS FOR FUEL CELL SYSTEM MONITORING FOR HYDROGEN on field effect devices using catalytic metal gates on silicon carbide substrates has been reviewed (Spetz) and prototype silicon carbide (SiC) FET based sensors show enhanced sensitivity at high temperature

  11. Theoretical study on interaction of hydrogen with single-walled boron nitride nanotubes. II. Collision, storage, and adsorption

    E-Print Network [OSTI]

    Goddard III, William A.

    of a true hydrogen storage capacity, thus it would be also true that some results of rather high storage storage material or not. Our previous study6 showed that the pristine CNT is not an effective hydrogenTheoretical study on interaction of hydrogen with single-walled boron nitride nanotubes. II

  12. Sample Proficiency Test exercise

    SciTech Connect (OSTI)

    Alcaraz, A; Gregg, H; Koester, C

    2006-02-05

    The current format of the OPCW proficiency tests has multiple sets of 2 samples sent to an analysis laboratory. In each sample set, one is identified as a sample, the other as a blank. This method of conducting proficiency tests differs from how an OPCW designated laboratory would receive authentic samples (a set of three containers, each not identified, consisting of the authentic sample, a control sample, and a blank sample). This exercise was designed to test the reporting if the proficiency tests were to be conducted. As such, this is not an official OPCW proficiency test, and the attached report is one method by which LLNL might report their analyses under a more realistic testing scheme. Therefore, the title on the report ''Report of the Umpteenth Official OPCW Proficiency Test'' is meaningless, and provides a bit of whimsy for the analyses and readers of the report.

  13. Sample Environments at Sector 30

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Designs Two standard sample holder designs are below. Copper sample holder from ARS. ARS sample holde diagram picture Aluminum sample holder - custom design Al design Al pic...

  14. Crystalline carbon nitride thin films deposited by microwave plasma chemical vapor deposition This article has been downloaded from IOPscience. Please scroll down to see the full text article.

    E-Print Network [OSTI]

    Gao, Hongjun

    of such a hypothetical ma- terial is also significant to the research in the fields of condensed matter physics compound. II. EXPERIMENTAL The carbon nitride thin films were deposited on polished Si (100) in the MPCVD

  15. Theoretical study of the ammonia nitridation rate on an Fe (100) surface: A combined density functional theory and kinetic Monte Carlo study

    E-Print Network [OSTI]

    Yeo, Sang Chul

    Ammonia (NH[subscript 3]) nitridation on an Fe surface was studied by combining density functional theory (DFT) and kinetic Monte Carlo (kMC) calculations. A DFT calculation was performed to obtain the energy barriers ...

  16. Analysis of Nitrogen Incorporation in Group III-Nitride-Arsenide Materials Using a Magnetic Sector Secondary-Ion Mass Spectrometry (SIMS) Instrument: Preprint

    SciTech Connect (OSTI)

    Reedy, R. C.; Geisz, J. F.; Kurtz, S. R.; Adams, R. O.; Perkins, C. L.

    2001-10-01

    Presented at the 2001 NCPV Program Review Meeting: Group III-nitride-arsenide materials were studied by SIMS, XRD, and Profiler to determine small amounts of nitrogen that can lower the alloys bandgap significantly.

  17. Electrical properties and electronic structure of Si-implanted hexagonal boron nitride films

    SciTech Connect (OSTI)

    He, B.; Yuen, M. F.; Zhang, W. J., E-mail: apwjzh@cityu.edu.hk [Center of Super-Diamond and Advanced Films (COSDAF), and Department of Physics and Materials Science, City University of Hong Kong (Hong Kong); Qiu, M. [School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114 (China)

    2014-07-07

    Si ion implantation with a set of ion energies and ion doses was carried out to dope hexagonal boron nitride (hBN) thin films synthesized by radio-frequency magnetron sputtering. Hall effect measurements revealed n-type conduction with a low resistivity of 0.5 ? cm at room temperature, corresponding to an electron concentration of 2.0?×?10{sup 19}?cm{sup ?3} and a mobility of 0.6 cm{sup 2}/V s. Temperature-dependent resistivity measurements in a wide temperature range from 50 to 800?K demonstrated two shallow donor levels in the hBN band gap induced by Si doping, which was in consistence with the theoretical calculation by density function theory.

  18. Vacancies in fully hydrogenated boron nitride layer: implications for functional nanodevices

    SciTech Connect (OSTI)

    Zhou, Yungang; Wang, Zhiguo; Nie, JL; Yang, Ping; Sun, Xin; Khaleel, Mohammad A.; Zu, Xiaotao; Gao, Fei

    2012-03-01

    Using density functional theory, a series of calculations of structural and electronic properties of hydrogen vacancies in a fully hydrogenated boron nitride (fH-BN) layer were conducted. By dehydrogenating the fH-BN structure, B-terminated vacancies can be created which induce complete spin polarization around the Fermi level, irrespective of the vacancy size. On the contrary, the fH-BN structure with N-terminated vacancies can be a small-gap semiconductor, a typical spin gapless semiconductor, or a metal depending on the vacancy size. Utilizing such vacancy-induced band gap and magnetism changes, possible applications in spintronics are proposed, and a special fH-BN based quantum dot device is designed.

  19. Contact-induced spin polarization of monolayer hexagonal boron nitride on Ni(111)

    SciTech Connect (OSTI)

    Ohtomo, Manabu; Entani, Shiro; Matsumoto, Yoshihiro; Naramoto, Hiroshi; Sakai, Seiji; Yamauchi, Yasushi; Kuzubov, Alex A.; Eliseeva, Natalya S.; Avramov, Pavel V.

    2014-02-03

    Hexagonal boron nitride (h-BN) is a promising barrier material for graphene spintronics. In this Letter, spin-polarized metastable de-excitation spectroscopy (SPMDS) is employed to study the spin-dependent electronic structure of monolayer h-BN/Ni(111). The extreme surface sensitivity of SPMDS enables us to elucidate a partial filling of the in-gap states of h-BN without any superposition of Ni 3d signals. The in-gap states are shown to have a considerable spin polarization parallel to the majority spin of Ni. The positive spin polarization is attributed to the ?-d hybridization and the effective spin transfer to the nitrogen atoms at the h-BN/Ni(111) interface.

  20. Novel Electronic and Magnetic Properties of Graphene Nanoflakes in a Boron Nitride Layer

    SciTech Connect (OSTI)

    Zhou, Yungang; Wang, Zhiguo; Yang, Ping; Gao, Fei

    2012-04-05

    Novel electronic and magnetic properties of various-sized graphene nanoflakes (GNFs) embedded in a boron nitride (BN) layer are studied using ab initio methods. The feasibility of synthesizing hybrid GNF-BN structure, a desirable quantum dot structure, is explored. In this structure, photoexcited electrons and holes occupy the same spatial region - the GNF region - which offers an effective way to generate a GNF-based light-emitting device and adjust its emitted optical properties by controlling the size and array of GNF in the BN layer. Based on the important magnetism properties of embedded GNF, we propose a specific configuration to obtain a large spin. Together with the high stability of spin alignment, the proposed configuration can be exploited for spintronic devices.

  1. Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

    SciTech Connect (OSTI)

    Kamalakar, M. Venkata Dankert, André; Bergsten, Johan; Ive, Tommy; Dash, Saroj P.

    2014-11-24

    Hexagonal boron nitride (h-BN) is a large bandgap insulating isomorph of graphene, ideal for atomically thin tunnel barrier applications. In this letter, we demonstrate large area chemical vapor deposited (CVD) h-BN as a promising spin tunnel barrier in graphene spin transport devices. In such structures, the ferromagnetic tunnel contacts with h-BN barrier are found to show robust tunneling characteristics over a large scale with resistances in the favorable range for efficient spin injection into graphene. The non-local spin transport and precession experiments reveal spin lifetime ?500 ps and spin diffusion length ?1.6??m in graphene with tunnel spin polarization ?11% at 100?K. The electrical and spin transport measurements at different injection bias current and gate voltages confirm tunnel spin injection through h-BN barrier. These results open up possibilities for implementation of large area CVD h-BN in spintronic technologies.

  2. Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors

    SciTech Connect (OSTI)

    Lyons, J. L.; Janotti, A.; Van de Walle, C. G. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2014-01-07

    We examine how hole localization limits the effectiveness of substitutional acceptors in oxide and nitride semiconductors and explain why p-type doping of these materials has proven so difficult. Using hybrid density functional calculations, we find that anion-site substitutional impurities in AlN, GaN, InN, and ZnO lead to atomic-like states that localize on the impurity atom itself. Substitution with cation-site impurities, on the other hand, triggers the formation of polarons that become trapped on nearest-neighbor anions, generally leading to large ionization energies for these acceptors. Unlike shallow effective-mass acceptors, these two types of deep acceptors couple strongly with the lattice, significantly affecting the optical properties and severely limiting prospects for achieving p-type conductivity in these wide-band-gap materials.

  3. A compact and reconfigurable silicon nitride time-bin entanglement circuit

    E-Print Network [OSTI]

    C. Xiong; X. Zhang; A. Mahendra; J. He; D. -Y. Choi; C. J. Chae; D. Marpaung; A. Leinse; R. G. Heideman; M. Hoekman; C. G. H. Roeloffzen; R. M. Oldenbeuving; P. W. L. van Dijk; C. Taddei; P. H. W. Leong; B. J. Eggleton

    2015-06-09

    Photonic chip based time-bin entanglement has attracted significant attention because of its potential for quantum communication and computation. Useful time-bin entanglement systems must be able to generate, manipulate and analyze entangled photons on a photonic chip for stable, scalable and reconfigurable operation. Here we report the first time-bin entanglement photonic chip that integrates time-bin generation, wavelength demultiplexing and entanglement analysis. A two-photon interference fringe with an 88.4% visibility is measured (without subtracting any noise), indicating the high performance of the chip. Our approach, based on a silicon nitride photonic circuit, which combines the low-loss characteristic of silica and tight integration features of silicon, paves the way for scalable real-world quantum information processors.

  4. The synthesis and structure of new transition metal lithium calcium nitride compounds

    SciTech Connect (OSTI)

    Hunting, Janet L.; Szymanski, Marta M.; Kowalsick, Amanda L.; Downie, Craig M.; DiSalvo, Francis J.

    2013-01-15

    Three new nitrides, Li{sub 3}Ca{sub 2}V{sub 0.79}Nb{sub 0.21}N{sub 4}, Li{sub 2}Ca{sub 2.67}Nb{sub 0.33}N{sub 3} and Li{sub 12}Ca{sub 9}W{sub 5}N{sub 20}, were synthesized in sealed niobium tubes using lithium nitride as a flux at temperatures ranging from 800 Degree-Sign C to 1050 Degree-Sign C. In all of these compounds, the transition metals are coordinated tetrahedrally by nitrogen; these tetrahedra are isolated from each other. Bullet Li{sub 3}Ca{sub 2}V{sub 0.79}Nb{sub 0.21}N{sub 4}, space group P2{sub 1}/m (no. 11), cell parameters a=5.7669(8) A, b=6.9123(9) A, c=6.0116(12) A, {beta}=90.727(9) Degree-Sign , Z=2, has a shared vanadium/niobium tetrahedral position which shares vertices with the tetrahedrally-coordinated lithium position. Bullet Li{sub 2}Ca{sub 2.67}Nb{sub 0.33}N{sub 3}, space group Req /o(3, Macron )m (no. 166), cell parameters a=3.6311(2) A, c=29.459(3) A, Z=3, contains a disordered tetrahedral calcium/niobium position, an octahedral calcium position and a triangularly coordinated lithium position. Bullet Li{sub 12}Ca{sub 9}W{sub 5}N{sub 20}, space group C2/c (no. 15), cell parameters a=27.7347(19) A, b=8.6652(6) A, c=10.7685(7) A, {beta}=110.314(2) Degree-Sign , Z=4, contains three crystallographically different tungsten positions as well as one disordered lithium position. - Graphical abstract: Crystal structure of Li{sub 3}Ca{sub 2}V{sub 0.79}Nb{sub 0.21}N{sub 4} depicting the chains of edge-sharing LiN{sub 4} (light hatching) and (V/Nb)N{sub 4} (dark hatching) tetrahedra viewed approximately along the [100] direction. Calcium atoms are shown as open circles and nitrogen atoms are colored black. Highlights: Black-Right-Pointing-Pointer Three new lithium calcium nitrides are synthesized. Black-Right-Pointing-Pointer Lithium nitride flux used in synthesis. Black-Right-Pointing-Pointer Structures contain isolated tetrahedrally coordinated transition metals. Black-Right-Pointing-Pointer Li{sub 12}Ca{sub 9}W{sub 5}N{sub 20} contains three crystallographically different W positions.

  5. Thermal interface conductance across a graphene/hexagonal boron nitride heterojunction

    SciTech Connect (OSTI)

    Chen, Chun-Chung; Li, Zhen; Cronin, Stephen B. [Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089 (United States); Shi, Li [Department of Mechanical Engineering and Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)

    2014-02-24

    We measure thermal transport across a graphene/hexagonal boron nitride (h-BN) interface by electrically heating the graphene and measuring the temperature difference between the graphene and BN using Raman spectroscopy. Because the temperature of the graphene and BN are measured optically, this approach enables nanometer resolution in the cross-plane direction. A temperature drop of 60?K can be achieved across this junction at high electrical powers (14 mW). Based on the temperature difference and the applied power data, we determine the thermal interface conductance of this junction to be 7.4?×?10{sup 6}?Wm{sup ?2}K{sup ?1}, which is below the 10{sup 7}–10{sup 8}?Wm{sup ?2}K{sup ?1} values previously reported for graphene/SiO{sub 2} interface.

  6. Graphene on boron-nitride: Moiré pattern in the van der Waals energy

    SciTech Connect (OSTI)

    Neek-Amal, M. [Department of Physics, University of Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen (Belgium); Department of Physics, Shahid Rajaee University, Lavizan, Tehran 16788 (Iran, Islamic Republic of); Peeters, F. M. [Department of Physics, University of Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen (Belgium)

    2014-01-27

    The spatial dependence of the van der Waals (vdW) energy between graphene and hexagonal boron-nitride (h-BN) is investigated using atomistic simulations. The van der Waals energy between graphene and h-BN shows a hexagonal superlattice structure identical to the observed Moiré pattern in the local density of states, which depends on the lattice mismatch and misorientation angle between graphene and h-BN. Our results provide atomistic features of the weak van der Waals interaction between graphene and BN which are in agreement with experiment and provide an analytical expression for the size of the spatial variation of the weak van der Waals interaction. We also found that the A-B-lattice symmetry of graphene is broken along the armchair direction.

  7. A cohesive law for interfaces in graphene/hexagonal boron nitride heterostructure

    SciTech Connect (OSTI)

    Zhang, Chenxi [Department of Mechanical and Aerospace Engineering, University of Miami, Coral Gables, Florida 33146 (United States); Lou, Jun [Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77251 (United States); Song, Jizhou, E-mail: jzsong@gmail.com [Department of Engineering Mechanics and Soft Matter Research Center, Zhejiang University, Hangzhou 310027 (China)

    2014-04-14

    Graphene/hexagonal boron nitride (h-BN) heterostructure has showed great potential to improve the performance of graphene device. We have established the cohesive law for interfaces between graphene and monolayer or multi-layer h-BN based on the van der Waals force. The cohesive energy and cohesive strength are given in terms of area density of atoms on corresponding layers, number of layers, and parameters in the van der Waals force. It is found that the cohesive law in the graphene/multi-layer h-BN is dominated by the three h-BN layers which are closest to the graphene. The approximate solution is also obtained to simplify the expression of cohesive law. These results are very useful to study the deformation of graphene/h-BN heterostructure, which may have significant impacts on the performance and reliability of the graphene devices especially in the areas of emerging applications such as stretchable electronics.

  8. Polarization doping and the efficiency of III-nitride optoelectronic devices

    SciTech Connect (OSTI)

    Kivisaari, Pyry; Oksanen, Jani; Tulkki, Jukka [Department of Biomedical Engineering and Computational Science, Aalto University, P.O. Box 12200, FI-00076 Aalto (Finland)] [Department of Biomedical Engineering and Computational Science, Aalto University, P.O. Box 12200, FI-00076 Aalto (Finland)

    2013-11-18

    The intrinsic polarization is generally considered a nuisance in III-nitride devices, but recent studies have shown that it can be used to enhance p- and n-type conductivity and even to replace impurity doping. We show by numerical simulations that polarization-doped light-emitting diode (LED) structures have a significant performance advantage over conventional impurity-doped LED structures. Our results indicate that polarization doping decreases electric fields inside the active region and potential barriers in the depletion region, as well as the magnitude of the quantum-confined Stark effect. The simulations also predict at least an order of magnitude increase in the current density corresponding to the maximum efficiency (i.e., smaller droop) as compared to impurity-doped structures. The obtained high doping concentrations could also enable, e.g., fabrication of III-N resonant tunneling diodes and improved ohmic contacts.

  9. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw (Kensington, CA); Yu, Kin Man (Lafayette, CA)

    2012-07-31

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  10. Dilute group III-V nitride intermediate band solar cells with contact blocking layers

    DOE Patents [OSTI]

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2015-02-24

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  11. Pt monolayer shell on nitrided alloy core — A path to highly stable oxygen reduction catalyst

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hu, Jue; Kuttiyiel, Kurian A.; Sasaki, Kotaro; Su, Dong; Yang, Tae -Hyun; Park, Gu -Gon; Zhang, Chengxu; Chen, Guangyu; Adzic, Radoslav R.

    2015-07-22

    The inadequate activity and stability of Pt as a cathode catalyst under the severe operation conditions are the critical problems facing the application of the proton exchange membrane fuel cell (PEMFC). Here we report on a novel route to synthesize highly active and stable oxygen reduction catalysts by depositing Pt monolayer on a nitrided alloy core. The prepared PtMLPdNiN/C catalyst retains 89% of the initial electrochemical surface area after 50,000 cycles between potentials 0.6 and 1.0 V. By correlating electron energy-loss spectroscopy and X-ray absorption spectroscopy analyses with electrochemical measurements, we found that the significant improvement of stability of themore »PtMLPdNiN/C catalyst is caused by nitrogen doping while reducing the total precious metal loading.« less

  12. Vertical coupling of laser glass microspheres to buried silicon nitride ellipses and waveguides

    E-Print Network [OSTI]

    Navarro-Urrios, Daniel; Capuj, Nestor E; Berencen, Yonder; Garrido, Blas; Tredicucci, Alessandro

    2015-01-01

    We demonstrate the integration of Nd3+ doped Barium-Titanium-Silicate microsphere lasers with a Silicon Nitride photonic platform. Devices with two different geometrical configurations for extracting the laser light to buried waveguides have been fabricated and characterized. The first configuration relies on a standard coupling scheme, where the microspheres are placed over strip waveguides. The second is based on a buried elliptical geometry whose working principle is that of an elliptical mirror. In the latter case, the input of a strip waveguide is placed on one focus of the ellipse, while a lasing microsphere is placed on top of the other focus. The fabricated elliptical geometry (ellipticity=0.9) presents a light collecting capacity that is 50% greater than that of the standard waveguide coupling configuration and could be further improved by increasing the ellipticity. Moreover, since the dimensions of the spheres are much smaller than those of the ellipses, surface planarization is not required. On th...

  13. Effective Third-Order Nonlinearities in Metallic Refractory Titanium Nitride Thin Films

    E-Print Network [OSTI]

    Kinsey, Nathaniel; Courtwright, Devon; DeVault, Clayton; Bonner, Carl E; Gavrilenko, Vladimir I; Shalaev, Vladimir M; Hagan, David J; Van Stryland, Eric W; Boltasseva, Alexandra

    2015-01-01

    Nanophotonic devices offer an unprecedented ability to concentrate light into small volumes which can greatly increase nonlinear effects. However, traditional plasmonic materials suffer from low damage thresholds and are not compatible with standard semiconductor technology. Here we study the nonlinear optical properties in the novel refractory plasmonic material titanium nitride using the Z scan method at 1550 nm and 780 nm. We compare the extracted nonlinear parameters for TiN with previous works on noble metals and note a similarly large nonlinear optical response. However, TiN films have been shown to exhibit a damage threshold up to an order of magnitude higher than gold films of a similar thickness, while also being robust, cost-efficient, bio- and CMOS compatible. Together, these properties make TiN a promising material for metal-based nonlinear optics.

  14. Effects of Edge Oxidation on the Structural, Electronic, and Magnetic Properties of Zigzag Boron Nitride Nanoribbons

    E-Print Network [OSTI]

    Krepel, Dana

    2013-01-01

    The effects of edge chemistry on the relative stability and electronic properties of zigzag boron nitride nanoribbons (ZBNNRs) are investigated. Among all functional groups considered, fully hydroxylated ZBNNRs are found to be the most energetically stable. When an in-plane external electric field is applied perpendicular to the axis of both hydrogenated and hydroxylated ZBNNRs, a spin-polarized half-metallic state is induced, whose character is different than that predicted for ZGNRs. The onset field for achieving the half-metallic state is found to mainly depend on the width of the ribbon. Our results indicate that edge functionalization of ZBNNRs may open the way for the design of new nano-electronic and nano-spintronic devices.

  15. Silicon nitride swirl lower-chamber for high power turbocharged diesel engines

    SciTech Connect (OSTI)

    Kamiya, S.; Murachi, M.; Kawamoto, H.; Kato, S.; Kawakami, S.; Suzuki, Y.

    1985-01-01

    This paper describes application of sintered silicon nitride to the swirl lower-chamber in order to improve performance of turbocharged diesel engines. Various stress analyses by finite element method and stress measurements have been applied to determine the design specifications for the component, which compromise brittleness of ceramic materials. Material development was conducted to evaluate strength, fracture toughness, and thermal properties for the sintered bodies. Ceramic injection molding has been employed to fabricate components with large quantities. In the present work. Quality assurance for the components can be made by reliability evaluation methods as well as non-destructive and stress loading inspections. It is found that the engine performance with ceramic component has been increased in the power out put of 9ps as compared to that of conventional engines.

  16. Steel bonded dense silicon nitride compositions and method for their fabrication

    DOE Patents [OSTI]

    Landingham, Richard L. (Livermore, CA); Shell, Thomas E. (Tracy, CA)

    1987-01-01

    A two-stage bonding technique for bonding high density silicon nitride and other ceramic materials to stainless steel and other hard metals, and multilayered ceramic-metal composites prepared by the technique are disclosed. The technique involves initially slurry coating a surface of the ceramic material at about 1500.degree. C. in a vacuum with a refractory material and the stainless steel is then pressure bonded to the metallic coated surface by brazing it with nickel-copper-silver or nickel-copper-manganese alloys at a temperature in the range of about 850.degree. to 950.degree. C. in a vacuum. The two-stage bonding technique minimizes the temperature-expansion mismatch between the dissimilar materials.

  17. Transient fission-gas behavior in uranium nitride fuel under proposed space applications. Doctoral thesis

    SciTech Connect (OSTI)

    Deforest, D.L.

    1991-12-01

    In order to investigate whether fission gas swelling and release would be significant factors in a space based nuclear reactor operating under the Strategic Defense Initiative (SDI) program, the finite element program REDSTONE (Routine For Evaluating Dynamic Swelling in Transient Operational Nuclear Environments) was developed to model the 1-D, spherical geometry diffusion equations describing transient fission gas behavior in a single uranium nitride fuel grain. The equations characterized individual bubbles, rather than bubble groupings. This limits calculations to those scenarios where low temperatures, low burnups, or both were present. Instabilities in the bubble radii calculations forced the implementation of additional constraints limiting the bubble sizes to minimum and maximum (equilibrium) radii. The validity of REDSTONE calculations were checked against analytical solutions for internal consistency and against experimental studies for agreement with swelling and release results.

  18. Sampling system and method

    DOE Patents [OSTI]

    Decker, David L.; Lyles, Brad F.; Purcell, Richard G.; Hershey, Ronald Lee

    2013-04-16

    The present disclosure provides an apparatus and method for coupling conduit segments together. A first pump obtains a sample and transmits it through a first conduit to a reservoir accessible by a second pump. The second pump further conducts the sample from the reservoir through a second conduit.

  19. IDENTIFICATION Your Sample Box

    E-Print Network [OSTI]

    Liskiewicz, Maciej

    to Virginia Tech Soil Testing Lab, 145 Smyth Hall (MC 0465), 185 Ag Quad Ln, Blacksburg VA 24061, in sturdy, K, Ca, Mg, Zn, Mn, Cu, Fe, B, and soluble salts) NoCharge $16.00 Organic Matter $4.00 $6.00 Fax with soil sample and form; make check or money order payable to "Treasurer, Virginia Tech." COST PER SAMPLE

  20. Free Standing Soil Sample

    E-Print Network [OSTI]

    Stuart, Steven J.

    Free Standing Soil Sample Kiosks Clemson University Cooperative Extension Service Reportto of Richland County, Jackie Kopack Jordan has partnered with local garden centers to provide free standing soil sample collections sites. The free standing kiosks are located at three local garden centers. Woodley

  1. The cost of silicon nitride powder: What must it be to compete?

    SciTech Connect (OSTI)

    Das, S.; Curlee, T.R.

    1992-02-01

    The ability of advanced ceramic components to compete with similar metallic parts will depend in part on current and future efforts to reduce the cost of ceramic parts. This paper examines the potential reductions in part cost that could result from the development of less expensive advanced ceramic powders. The analysis focuses specifically on two silicon nitride engine components -- roller followers and turbocharger rotors. The results of the process-cost models developed for this work suggest that reductions in the cost of advanced silicon nitride powder from its current level of about $20 per pound to about $5 per pound will not in itself be sufficient to lower the cost of ceramic parts below the current cost of similar metallic components. This work also examines if combinations of lower-cost powders and further improvements in other key technical parameters to which costs are most sensitive could push the cost of ceramics below the cost of metallics. Although these sensitivity analyses are reflective of technical improvements that are very optimistic, the resulting part costs are estimated to remain higher than similar metallic parts. Our findings call into question the widely-held notion that the cost of ceramic components must not exceed the cost of similar metallic parts if ceramics are to be competitive. Economic viability will ultimately be decided not on the basis of which part is less costly, but on an assessment of the marginal costs and benefits provided by ceramics and metallics. This analysis does not consider the benefits side of the equation. Our findings on the cost side of the equation suggest that the competitiveness of advanced ceramics will ultimately be decided by our ability to evaluate and communicate the higher benefits that advanced ceramic parts may offer.

  2. The cost of silicon nitride powder: What must it be to compete

    SciTech Connect (OSTI)

    Das, S.; Curlee, T.R.

    1992-02-01

    The ability of advanced ceramic components to compete with similar metallic parts will depend in part on current and future efforts to reduce the cost of ceramic parts. This paper examines the potential reductions in part cost that could result from the development of less expensive advanced ceramic powders. The analysis focuses specifically on two silicon nitride engine components -- roller followers and turbocharger rotors. The results of the process-cost models developed for this work suggest that reductions in the cost of advanced silicon nitride powder from its current level of about $20 per pound to about $5 per pound will not in itself be sufficient to lower the cost of ceramic parts below the current cost of similar metallic components. This work also examines if combinations of lower-cost powders and further improvements in other key technical parameters to which costs are most sensitive could push the cost of ceramics below the cost of metallics. Although these sensitivity analyses are reflective of technical improvements that are very optimistic, the resulting part costs are estimated to remain higher than similar metallic parts. Our findings call into question the widely-held notion that the cost of ceramic components must not exceed the cost of similar metallic parts if ceramics are to be competitive. Economic viability will ultimately be decided not on the basis of which part is less costly, but on an assessment of the marginal costs and benefits provided by ceramics and metallics. This analysis does not consider the benefits side of the equation. Our findings on the cost side of the equation suggest that the competitiveness of advanced ceramics will ultimately be decided by our ability to evaluate and communicate the higher benefits that advanced ceramic parts may offer.

  3. Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert-butyl)amido]metal(II) precursors and ammonia

    SciTech Connect (OSTI)

    Cloud, Andrew N.; Abelson, John R., E-mail: abelson@illinois.edu [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 201 Materials Science and Engineering Building, 1304 W. Green St., Urbana, Illinois 61801 (United States); Davis, Luke M.; Girolami, Gregory S., E-mail: girolami@scs.illinois.edu [School of Chemical Sciences, University of Illinois at Urbana-Champaign, 600 S. Mathews Ave., Urbana, Illinois 61801 (United States)

    2014-03-15

    Thin films of late transition metal nitrides (where the metal is iron, cobalt, or nickel) are grown by low-pressure metalorganic chemical vapor deposition from bis[di(tert-butyl)amido]metal(II) precursors and ammonia. These metal nitrides are known to have useful mechanical and magnetic properties, but there are few thin film growth techniques to produce them based on a single precursor family. The authors report the deposition of metal nitride thin films below 300?°C from three recently synthesized M[N(t-Bu){sub 2}]{sub 2} precursors, where M?=?Fe, Co, and Ni, with growth onset as low as room temperature. Metal-rich phases are obtained with constant nitrogen content from growth onset to 200?°C over a range of feedstock partial pressures. Carbon contamination in the films is minimal for iron and cobalt nitride, but similar to the nitrogen concentration for nickel nitride. X-ray photoelectron spectroscopy indicates that the incorporated nitrogen is present as metal nitride, even for films grown at the reaction onset temperature. Deposition rates of up to 18?nm/min are observed. The film morphologies, growth rates, and compositions are consistent with a gas-phase transamination reaction that produces precursor species with high sticking coefficients and low surface mobilities.

  4. Water Sample Concentrator

    ScienceCinema (OSTI)

    Idaho National Laboratory

    2010-01-08

    Automated portable device that concentrates and packages a sample of suspected contaminated water for safe, efficient transport to a qualified analytical laboratory. This technology will help safeguard against pathogen contamination or chemical and biolog

  5. Liquid scintillator sampling calorimetry 

    E-Print Network [OSTI]

    Dudgeon, R. Greg

    1994-01-01

    This research was supported by the Department of Energy to investigate a new sampling calorimeter technology for the high intensity regions of the Superconducting Supercollider. The technology involved using liquid scintillator filled glass tubes...

  6. Sample Changes and Issues

    Annual Energy Outlook [U.S. Energy Information Administration (EIA)]

    EIA-914 Survey and HPDI. Figure 2 shows how this could change apparent production. The blue line shows the reported sample production as it would normally be reported under the...

  7. Dissolution actuated sample container

    DOE Patents [OSTI]

    Nance, Thomas A.; McCoy, Frank T.

    2013-03-26

    A sample collection vial and process of using a vial is provided. The sample collection vial has an opening secured by a dissolvable plug. When dissolved, liquids may enter into the interior of the collection vial passing along one or more edges of a dissolvable blocking member. As the blocking member is dissolved, a spring actuated closure is directed towards the opening of the vial which, when engaged, secures the vial contents against loss or contamination.

  8. SAMPLING AND ANALYSIS PROTOCOLS

    SciTech Connect (OSTI)

    Jannik, T; P Fledderman, P

    2007-02-09

    Radiological sampling and analyses are performed to collect data for a variety of specific reasons covering a wide range of projects. These activities include: Effluent monitoring; Environmental surveillance; Emergency response; Routine ambient monitoring; Background assessments; Nuclear license termination; Remediation; Deactivation and decommissioning (D&D); and Waste management. In this chapter, effluent monitoring and environmental surveillance programs at nuclear operating facilities and radiological sampling and analysis plans for remediation and D&D activities will be discussed.

  9. Liquid sampling system

    DOE Patents [OSTI]

    Larson, L.L.

    1984-09-17

    A conduit extends from a reservoir through a sampling station and back to the reservoir in a closed loop. A jet ejector in the conduit establishes suction for withdrawing liquid from the reservoir. The conduit has a self-healing septum therein upstream of the jet ejector for receiving one end of a double-ended cannula, the other end of which is received in a serum bottle for sample collection. Gas is introduced into the conduit at a gas bleed between the sample collection bottle and the reservoir. The jet ejector evacuates gas from the conduit and the bottle and aspirates a column of liquid from the reservoir at a high rate. When the withdrawn liquid reaches the jet ejector the rate of flow therethrough reduces substantially and the gas bleed increases the pressure in the conduit for driving liquid into the sample bottle, the gas bleed forming a column of gas behind the withdrawn liquid column and interrupting the withdrawal of liquid from the reservoir. In the case of hazardous and toxic liquids, the sample bottle and the jet ejector may be isolated from the reservoir and may be further isolated from a control station containing remote manipulation means for the sample bottle and control valves for the jet ejector and gas bleed. 5 figs.

  10. Liquid sampling system

    DOE Patents [OSTI]

    Larson, Loren L. (Idaho Falls, ID)

    1987-01-01

    A conduit extends from a reservoir through a sampling station and back to the reservoir in a closed loop. A jet ejector in the conduit establishes suction for withdrawing liquid from the reservoir. The conduit has a self-healing septum therein upstream of the jet ejector for receiving one end of a double-ended cannula, the other end of which is received in a serum bottle for sample collection. Gas is introduced into the conduit at a gas bleed between the sample collection bottle and the reservoir. The jet ejector evacuates gas from the conduit and the bottle and aspirates a column of liquid from the reservoir at a high rate. When the withdrawn liquid reaches the jet ejector the rate of flow therethrough reduces substantially and the gas bleed increases the pressure in the conduit for driving liquid into the sample bottle, the gas bleed forming a column of gas behind the withdrawn liquid column and interrupting the withdrawal of liquid from the reservoir. In the case of hazardous and toxic liquids, the sample bottle and the jet ejector may be isolated from the reservoir and may be further isolated from a control station containing remote manipulation means for the sample bottle and control valves for the jet ejector and gas bleed.

  11. Application of Self-Propagating High Temperature Synthesis to the Fabrication of Actinide Bearing Nitride and Other Ceramic Nuclear Fuels

    SciTech Connect (OSTI)

    John J. Moore, Douglas E. Burkes, Collin D. Donohoue, Marissa M. Reigel, J. Rory Kennedy

    2009-05-18

    The high vapor pressures of americium (Am) and americium nitride (AmN) are cause for concern in producing nitride ceramic nuclear fuel that contains Am. Along with the problem of Am retention during the sintering phases of current processing methods, are additional concerns of producing a consistent product of desirable homogeneity, density and porosity. Similar difficulties have been experienced during the laboratory scale process development stage of producing metal alloys containing Am wherein compact powder sintering methods had to be abandoned. Therefore, there is an urgent need to develop a low-temperature or low–heat fuel fabrication process for the synthesis of Am-containing ceramic fuels. Self-propagating high temperature synthesis (SHS), also called combustion synthesis, offers such an alternative process for the synthesis of Am nitride fuels. Although SHS takes thermodynamic advantage of the high combustion temperatures of these exothermic SHS reactions to synthesize the required compounds, the very fast heating, reaction and cooling rates can kinetically generate extremely fast reaction rates and facilitate the retention of volatile species within the rapidly propagating SHS reaction front. The initial objective of the research program is to use Mn as the surrogate for Am to synthesize a reproducible, dense, high quality Zr-Mn-N ceramic compound. Having determined the fundamental SHS reaction parameters and optimized SHS processing steps using Mn as the surrogate for Am, the technology will be transferred to Idaho National Laboratory to successfully synthesize a high quality Zr-Am-N ceramic fuel.

  12. Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications

    SciTech Connect (OSTI)

    Russell D. Dupuis

    2004-09-30

    We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the first year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The first year activities were focused on the installation, set-up, and use of advanced equipment for the metalorganic chemical vapor deposition growth of III-nitride films and the characterization of these materials (Task 1) and the design, fabrication, testing of nitride LEDs (Task 4). As a progress highlight, we obtained improved quality of {approx} 2 {micro}m-thick GaN layers (as measured by the full width at half maximum of the asymmetric (102) X-ray diffraction peak of less than 350 arc-s) and higher p-GaN:Mg doping level (free hole carrier higher than 1E18 cm{sup -3}). Also in this year, we have developed the growth of InGaN/GaN active layers for long-wavelength green light emitting diodes, specifically, for emission at {lambda} {approx} 540nm. The effect of the Column III precursor (for Ga) and the post-growth thermal annealing effect were also studied. Our LED device fabrication process was developed and initially optimized, especially for low-resistance ohmic contacts for p-GaN:Mg layers, and blue-green light emitting diode structures were processed and characterized.

  13. Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants

    DOE Patents [OSTI]

    Pugar, Eloise A. (Isla Vista, CA); Morgan, Peter E. D. (Thousand Oaks, CA)

    1990-01-01

    A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N.sub.n H.sub.(n+m) wherein: n=1-4 and m=2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200.degree.-1700.degree. C. for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si-N-H intermediate enables chemical pathways to be explored previously unavailable in conventional solid state approaches to silicon-nitrogen ceramics.

  14. Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants

    DOE Patents [OSTI]

    Pugar, E.A.; Morgan, P.E.D.

    1987-09-15

    A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N/sub n/H/sub (n+m)/ wherein: n = 1--4 and m = 2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200--1700/degree/C for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si/endash/N/endash/H intermediate enables chemical pathways to be explored previously unavailable in conventional solid-state approaches to silicon-nitrogen ceramics

  15. Quantum rejection sampling

    E-Print Network [OSTI]

    Maris Ozols; Martin Roetteler; Jérémie Roland

    2011-12-13

    Rejection sampling is a well-known method to sample from a target distribution, given the ability to sample from a given distribution. The method has been first formalized by von Neumann (1951) and has many applications in classical computing. We define a quantum analogue of rejection sampling: given a black box producing a coherent superposition of (possibly unknown) quantum states with some amplitudes, the problem is to prepare a coherent superposition of the same states, albeit with different target amplitudes. The main result of this paper is a tight characterization of the query complexity of this quantum state generation problem. We exhibit an algorithm, which we call quantum rejection sampling, and analyze its cost using semidefinite programming. Our proof of a matching lower bound is based on the automorphism principle which allows to symmetrize any algorithm over the automorphism group of the problem. Our main technical innovation is an extension of the automorphism principle to continuous groups that arise for quantum state generation problems where the oracle encodes unknown quantum states, instead of just classical data. Furthermore, we illustrate how quantum rejection sampling may be used as a primitive in designing quantum algorithms, by providing three different applications. We first show that it was implicitly used in the quantum algorithm for linear systems of equations by Harrow, Hassidim and Lloyd. Secondly, we show that it can be used to speed up the main step in the quantum Metropolis sampling algorithm by Temme et al.. Finally, we derive a new quantum algorithm for the hidden shift problem of an arbitrary Boolean function and relate its query complexity to "water-filling" of the Fourier spectrum.

  16. Fluid sampling system

    DOE Patents [OSTI]

    Houck, Edward D. (Idaho Falls, ID)

    1994-01-01

    An fluid sampling system allows sampling of radioactive liquid without spillage. A feed tank is connected to a liquid transfer jet powered by a pumping chamber pressurized by compressed air. The liquid is pumped upwardly into a sampling jet of a venturi design having a lumen with an inlet, an outlet, a constricted middle portion, and a port located above the constricted middle portion. The liquid is passed under pressure through the constricted portion causing its velocity to increase and its pressure to decreased, thereby preventing liquid from escaping. A septum sealing the port can be pierced by a two pointed hollow needle leading into a sample bottle also sealed by a pierceable septum affixed to one end. The bottle is evacuated by flow through the sample jet, cyclic variation in the sampler jet pressure periodically leaves the evacuated bottle with lower pressure than that of the port, thus causing solution to pass into the bottle. The remaining solution in the system is returned to the feed tank via a holding tank.

  17. Fluid sampling system

    DOE Patents [OSTI]

    Houck, E.D.

    1994-10-11

    An fluid sampling system allows sampling of radioactive liquid without spillage. A feed tank is connected to a liquid transfer jet powered by a pumping chamber pressurized by compressed air. The liquid is pumped upwardly into a sampling jet of a venturi design having a lumen with an inlet, an outlet, a constricted middle portion, and a port located above the constricted middle portion. The liquid is passed under pressure through the constricted portion causing its velocity to increase and its pressure to be decreased, thereby preventing liquid from escaping. A septum sealing the port can be pierced by a two pointed hollow needle leading into a sample bottle also sealed by a pierceable septum affixed to one end. The bottle is evacuated by flow through the sample jet, cyclic variation in the sampler jet pressure periodically leaves the evacuated bottle with lower pressure than that of the port, thus causing solution to pass into the bottle. The remaining solution in the system is returned to the feed tank via a holding tank. 4 figs.

  18. Pre-Oxidized and Nitrided Stainless Steel Foil for Proton Exchange Membrane Fuel Cell Bipolar Plates: Part 2- Single-Cell Fuel Cell Evaluation of Stamped Plates

    SciTech Connect (OSTI)

    Toops, Todd J [ORNL; Brady, Michael P [ORNL; Tortorelli, Peter F [ORNL; Pihl, Josh A [ORNL; EstevezGenCell, Francisco [GenCell Corp; Connors, Dan [GenCell Corp; Garzon, Fernando [Los Alamos National Laboratory (LANL); Rockward, Tommy [Los Alamos National Laboratory (LANL); Gervasio, Don [Arizona State University; Kosaraju, S.H. [Arizona State University

    2010-01-01

    Thermal (gas) nitridation of stainless steel alloys can yield low interfacial contact resistance (ICR), electrically conductive and corrosion-resistant nitride containing surface layers (Cr{sub 2}N, CrN, TiN, V{sub 2}N, VN, etc.) of interest for fuel cells, batteries, and sensors. This paper presents results of proton exchange membrane (PEM) single-cell fuel cell studies of stamped and pre-oxidized/nitrided developmental Fe-20Cr-4V weight percent (wt.%) and commercial type 2205 stainless steel alloy foils. The single-cell fuel cell behavior of the stamped and pre-oxidized/nitrided material was compared to as-stamped (no surface treatment) 904L, 2205, and Fe-20Cr-4V stainless steel alloy foils and machined graphite of similar flow field design. The best fuel cell behavior among the alloys was exhibited by the pre-oxidized/nitrided Fe-20Cr-4V, which exhibited {approx}5-20% better peak power output than untreated Fe-20Cr-4V, 2205, and 904L metal stampings. Durability was assessed for pre-oxidized/nitrided Fe-20Cr-4V, 904L metal, and graphite plates by 1000+ h of cyclic single-cell fuel cell testing. All three materials showed good durability with no significant degradation in cell power output. Post-test analysis indicated no metal ion contamination of the membrane electrode assemblies (MEAs) occurred with the pre-oxidized and nitrided Fe-20Cr-4V or graphite plates, and only a minor amount of contamination with the 904L plates.

  19. Viscous sludge sample collector

    DOE Patents [OSTI]

    Beitel, George A [Richland, WA

    1983-01-01

    A vertical core sample collection system for viscous sludge. A sample tube's upper end has a flange and is attached to a piston. The tube and piston are located in the upper end of a bore in a housing. The bore's lower end leads outside the housing and has an inwardly extending rim. Compressed gas, from a storage cylinder, is quickly introduced into the bore's upper end to rapidly accelerate the piston and tube down the bore. The lower end of the tube has a high sludge entering velocity to obtain a full-length sludge sample without disturbing strata detail. The tube's downward motion is stopped when its upper end flange impacts against the bore's lower end inwardly extending rim.

  20. Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.

    SciTech Connect (OSTI)

    Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr; Coltrin, Michael Elliott; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01

    With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs) are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined using optical reflectance and the nucleation density was determined using atomic force microscopy (AFM) and Nomarski microscopy. Dislocation density was measured using X-ray diffraction and AFM after coating the surface with silicon nitride to delineate all dislocation types. The program milestone of producing GaN films with dislocation densities of 1 x 10{sup 8} cm{sup -2} was met by silicon nitride treatment of annealed sapphire followed by the multiple deposition of a low density of GaN nuclei followed by high temperature GaN growth. Details of this growth process and the underlying science are presented in this final report along with problems encountered in this research and recommendations for future work.

  1. Methods for and products of processing nanostructure nitride, carbonitride and oxycarbonitride electrode power materials by utilizing sol gel technology for supercapacitor applications

    DOE Patents [OSTI]

    Huang, Yuhong (West Hills, CA); Wei, Oiang (West Hills, CA); Chu, Chung-tse (Chatsworth, CA); Zheng, Haixing (Oak Park, CA)

    2001-01-01

    Metal nitride, carbonitride, and oxycarbonitride powder with high surface area (up to 150 m.sup.2 /g) is prepared by using sol-gel process. The metal organic precursor, alkoxides or amides, is synthesized firstly. The metal organic precursor is modified by using unhydrolyzable organic ligands or templates. A wet gel is formed then by hydrolysis and condensation process. The solvent in the wet gel is then be removed supercritically to form porous amorphous hydroxide. This porous hydroxide materials is sintered to 725.degree. C. under the ammonia flow and porous nitride powder is formed. The other way to obtain high surface area nitride, carbonitride, and oxycarbonitride powder is to pyrolyze polymerized templated metal amides aerogel in an inert atmosphere. The electrochemical capacitors are prepared by using sol-gel prepared nitride, carbonitride, and oxycarbonitride powder. Two methods are used to assemble the capacitors. Electrode is formed either by pressing the mixture of nitride powder and binder to a foil, or by depositing electrode coating onto metal current collector. The binder or coating is converted into a continuous network of electrode material after thermal treatment to provide enhanced energy and power density. Liquid electrolyte is soaked into porous electrode. The electrochemical capacitor assembly further has a porous separator layer between two electrodes/electrolyte and forming a unit cell.

  2. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide A. J. Kerr, E. Chagarov, S. Gu, T. Kaufman-Osborn, S. Madisetti, J. Wu, P. M. Asbeck, S. Oktyabrsky, and A. C.

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide A. J. Kerr, E of plasma enhanced atomic layer deposited dielectrics on Ga- and N- face gallium nitride J. Appl. Phys. 116, 123702 (2014); 10.1063/1.4895985 Atomic layer deposited passivation layers for superlattice

  3. Lattice site location of impurities in group III nitrides using emission channeling

    E-Print Network [OSTI]

    De Vries, Bart; Wahl, Ulrich

    The group III nitrides comprise the semiconducting materials InN, GaN, AlN and their ternary alloys. During the last decade, GaN has attracted widespread attention due to its large band gap and hardness. These properties, combined with the fact that its band gap can be adjusted by alloying it with InN and AlN, make GaN a suitable material for the fabrication of optical components that operate in the blue to ultraviolet region of the electromagnetic spectrum, and for microwave and high-power applications. Indeed, during the last couple of years, GaN-based blue and violet light-emitting devices (LEDs) and laser diodes have been realized and commercialized: the violet laser diodes will even be the keystone to the next generation of optical data storage standards, Blu-ray and HD-DVD. \\\\ \\\\ A key aspect in device production is the incorporation of dopants that can alter the electronic, magnetic or optical properties of the host material. For example, Si is often used to generate n-type GaN, while Mg is the most fr...

  4. Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

    SciTech Connect (OSTI)

    Posseme, N., E-mail: nicolas.posseme@cea.fr; Pollet, O.; Barnola, S. [CEA-LETI-Minatec, 17 rue des martyrs, 38054 Grenoble cedex 09 (France)

    2014-08-04

    Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ions implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6?A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.

  5. Antifuse with a single silicon-rich silicon nitride insulating layer

    DOE Patents [OSTI]

    Habermehl, Scott D.; Apodaca, Roger T.

    2013-01-22

    An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0

  6. Interlayer coupling enhancement in graphene/hexagonal boron nitride heterostructures by intercalated defects or vacancies

    SciTech Connect (OSTI)

    Park, Sohee [Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of)] [Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of); Park, Changwon [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)] [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Kim, Gunn, E-mail: gunnkim@sejong.ac.kr [Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)] [Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)

    2014-04-07

    Hexagonal boron nitride (hBN), a remarkable material with a two-dimensional atomic crystal structure, has the potential to fabricate heterostructures with unusual properties. We perform first-principles calculations to determine whether intercalated metal atoms and vacancies can mediate interfacial coupling and influence the structural and electronic properties of the graphene/hBN heterostructure. Metal impurity atoms (Li, K, Cr, Mn, Co, and Cu), acting as extrinsic defects between the graphene and hBN sheets, produce n-doped graphene. We also consider intrinsic vacancy defects and find that a boron monovacancy in hBN acts as a magnetic dopant for graphene, whereas a nitrogen monovacancy in hBN serves as a nonmagnetic dopant for graphene. In contrast, the smallest triangular vacancy defects in hBN are unlikely to result in significant changes in the electronic transport of graphene. Our findings reveal that a hBN layer with some vacancies or metal impurities enhances the interlayer coupling in the graphene/hBN heterostructure with respect to charge doping and electron scattering.

  7. Dry etching techniques for active devices based on hexagonal boron nitride epilayers

    SciTech Connect (OSTI)

    Grenadier, Samuel; Li, Jing; Lin, Jingyu; Jiang, Hongxing [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)] [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2013-11-15

    Hexagonal boron nitride (hBN) has emerged as a fundamentally and technologically important material system owing to its unique physical properties including layered structure, wide energy bandgap, large optical absorption, and neutron capture cross section. As for any materials under development, it is necessary to establish device processing techniques to realize active devices based on hBN. The authors report on the advancements in dry etching techniques for active devices based on hBN epilayers via inductively coupled plasma (ICP). The effect of ICP radio frequency (RF) power on the etch rate and vertical side wall profile was studied. The etching depth and angle with respect to the surface were measured using atomic force microscopy showing that an etching rate ?1.25 ?m/min and etching angles >80° were obtained. Profilometer data and scanning electron microscope images confirmed these results. This work demonstrates that SF{sub 6} is very suitable for etching hBN epilayers in RF plasma environments and can serve as a guide for future hBN device processing.

  8. The excitonic effects in single and double-walled boron nitride nanotubes

    SciTech Connect (OSTI)

    Wang, Shudong; Li, Yunhai; Wang, Jinlan, E-mail: jlwang@seu.edu.cn [Department of Physics and Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 211189 (China); Yip, Joanne [Institute of Textiles and Clothing, Hong Kong Polytechnic University, Kowloon, Hong Kong (China)

    2014-06-28

    The electronic structures and excitonic optical properties of single- and double-walled armchair boron nitride nanotubes (BNNTs) [e.g., (5,5) and (10,10), and (5,5)@(10,10)] are investigated within many-body Green's function and Bethe-Salpeter equation formalism. The first absorption peak of the double-walled nanotube has almost no shift compared with the single-walled (5,5) tube due to the strong optical transition in the double-walled tube that occurs within the inner (5,5) one. Dark and semi-dark excitonic states are detected in the lower energy region, stemming from the charge transfer between inner and outer tubes in the double-walled structure. Most interestingly, the charge transfer makes the electron and the hole reside in different tubes. Moreover, the excited electrons in the double-walled BNNT are able to transfer from the outer tube to the inner one, opposite to that which has been observed in double-walled carbon nanotubes.

  9. High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

    E-Print Network [OSTI]

    Shiue, Ren-Jye; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dimitri; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

    2015-01-01

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cut-off at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photorespo...

  10. Sampling Report for May-June, 2014 WIPP Samples

    Office of Environmental Management (EM)

    1 L L N L - X X X X - X X X X X Sampling Report for May- June, 2014 WIPP Samples UNCLASSIFIED Forensic Science Center January 8, 2015 Sampling Report for May-June, 2014 WIPP...

  11. Compact cold stage for micro-computerized tomography imaging of chilled or frozen samples

    SciTech Connect (OSTI)

    Hullar, Ted; Anastasio, Cort; Paige, David F.; Rowland, Douglas J.

    2014-04-15

    High resolution X-ray microCT (computerized tomography) can be used to image a variety of objects, including temperature-sensitive materials. In cases where the sample must be chilled or frozen to maintain sample integrity, either the microCT machine itself must be placed in a refrigerated chamber, or a relatively expensive commercial cold stage must be purchased. We describe here the design and construction of a low-cost custom cold stage suitable for use in a microCT imaging system. Our device uses a boron nitride sample holder, two-stage Peltier cooler, fan-cooled heat sink, and electronic controller to maintain sample temperatures as low as ?25?°C ± 0.2?°C for the duration of a tomography acquisition. The design does not require modification to the microCT machine, and is easily installed and removed. Our custom cold stage represents a cost-effective solution for refrigerating CT samples for imaging, and is especially useful for shared equipment or machines unsuitable for cold room use.

  12. Sample introducing apparatus and sample modules for mass spectrometer

    DOE Patents [OSTI]

    Thompson, Cyril V. (Knoxville, TN); Wise, Marcus B. (Kingston, TN)

    1993-01-01

    An apparatus for introducing gaseous samples from a wide range of environmental matrices into a mass spectrometer for analysis of the samples is described. Several sample preparing modules including a real-time air monitoring module, a soil/liquid purge module, and a thermal desorption module are individually and rapidly attachable to the sample introducing apparatus for supplying gaseous samples to the mass spectrometer. The sample-introducing apparatus uses a capillary column for conveying the gaseous samples into the mass spectrometer and is provided with an open/split interface in communication with the capillary and a sample archiving port through which at least about 90 percent of the gaseous sample in a mixture with an inert gas that was introduced into the sample introducing apparatus is separated from a minor portion of the mixture entering the capillary discharged from the sample introducing apparatus.

  13. Sample introducing apparatus and sample modules for mass spectrometer

    DOE Patents [OSTI]

    Thompson, C.V.; Wise, M.B.

    1993-12-21

    An apparatus for introducing gaseous samples from a wide range of environmental matrices into a mass spectrometer for analysis of the samples is described. Several sample preparing modules including a real-time air monitoring module, a soil/liquid purge module, and a thermal desorption module are individually and rapidly attachable to the sample introducing apparatus for supplying gaseous samples to the mass spectrometer. The sample-introducing apparatus uses a capillary column for conveying the gaseous samples into the mass spectrometer and is provided with an open/split interface in communication with the capillary and a sample archiving port through which at least about 90 percent of the gaseous sample in a mixture with an inert gas that was introduced into the sample introducing apparatus is separated from a minor portion of the mixture entering the capillary discharged from the sample introducing apparatus. 5 figures.

  14. Decoupled Sampling for Graphics Pipelines

    E-Print Network [OSTI]

    Ragan-Kelley, Jonathan Millar

    We propose a generalized approach to decoupling shading from visibility sampling in graphics pipelines, which we call decoupled sampling. Decoupled sampling enables stochastic supersampling of motion and defocus blur at ...

  15. Sample Environments at Sector 30

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    sample holder designs are below. Aluminum sample holder - custom design Al design Al pic click drawing for .pdf-file Aluminum sample holder - custom design Al design Al pic...

  16. Fluid sampling apparatus and method

    DOE Patents [OSTI]

    Yeamans, D.R.

    1998-02-03

    Incorporation of a bellows in a sampling syringe eliminates ingress of contaminants, permits replication of amounts and compression of multiple sample injections, and enables remote sampling for off-site analysis. 3 figs.

  17. Soil sampling kit and a method of sampling therewith

    DOE Patents [OSTI]

    Thompson, Cyril V. (Knoxville, TN)

    1991-01-01

    A soil sampling device and a sample containment device for containing a soil sample is disclosed. In addition, a method for taking a soil sample using the soil sampling device and soil sample containment device to minimize the loss of any volatile organic compounds contained in the soil sample prior to analysis is disclosed. The soil sampling device comprises two close fitting, longitudinal tubular members of suitable length, the inner tube having the outward end closed. With the inner closed tube withdrawn a selected distance, the outer tube can be inserted into the ground or other similar soft material to withdraw a sample of material for examination. The inner closed end tube controls the volume of the sample taken and also serves to eject the sample. The soil sample containment device has a sealing member which is adapted to attach to an analytical apparatus which analyzes the volatile organic compounds contained in the sample. The soil sampling device in combination with the soil sample containment device allow an operator to obtain a soil sample containing volatile organic compounds and minimizing the loss of the volatile organic compounds prior to analysis of the soil sample for the volatile organic compounds.

  18. Soil sampling kit and a method of sampling therewith

    DOE Patents [OSTI]

    Thompson, C.V.

    1991-02-05

    A soil sampling device and a sample containment device for containing a soil sample is disclosed. In addition, a method for taking a soil sample using the soil sampling device and soil sample containment device to minimize the loss of any volatile organic compounds contained in the soil sample prior to analysis is disclosed. The soil sampling device comprises two close fitting, longitudinal tubular members of suitable length, the inner tube having the outward end closed. With the inner closed tube withdrawn a selected distance, the outer tube can be inserted into the ground or other similar soft material to withdraw a sample of material for examination. The inner closed end tube controls the volume of the sample taken and also serves to eject the sample. The soil sample containment device has a sealing member which is adapted to attach to an analytical apparatus which analyzes the volatile organic compounds contained in the sample. The soil sampling device in combination with the soil sample containment device allows an operator to obtain a soil sample containing volatile organic compounds and minimizing the loss of the volatile organic compounds prior to analysis of the soil sample for the volatile organic compounds. 11 figures.

  19. NID Copper Sample Analysis

    SciTech Connect (OSTI)

    Kouzes, Richard T.; Zhu, Zihua

    2011-09-12

    The current focal point of the nuclear physics program at PNNL is the MAJORANA DEMONSTRATOR, and the follow-on Tonne-Scale experiment, a large array of ultra-low background high-purity germanium detectors, enriched in 76Ge, designed to search for zero-neutrino double-beta decay (0???). This experiment requires the use of germanium isotopically enriched in 76Ge. The MAJORANA DEMONSTRATOR is a DOE and NSF funded project with a major science impact. The DEMONSTRATOR will utilize 76Ge from Russia, but for the Tonne-Scale experiment it is hoped that an alternate technology, possibly one under development at Nonlinear Ion Dynamics (NID), will be a viable, US-based, lower-cost source of separated material. Samples of separated material from NID require analysis to determine the isotopic distribution and impurities. DOE is funding NID through an SBIR grant for development of their separation technology for application to the Tonne-Scale experiment. The Environmental Molecular Sciences facility (EMSL), a DOE user facility at PNNL, has the required mass spectroscopy instruments for making isotopic measurements that are essential to the quality assurance for the MAJORANA DEMONSTRATOR and for the development of the future separation technology required for the Tonne-Scale experiment. A sample of isotopically separated copper was provided by NID to PNNL in January 2011 for isotopic analysis as a test of the NID technology. The results of that analysis are reported here. A second sample of isotopically separated copper was provided by NID to PNNL in August 2011 for isotopic analysis as a test of the NID technology. The results of that analysis are also reported here.

  20. Germanium-76 Sample Analysis

    SciTech Connect (OSTI)

    Kouzes, Richard T.; Engelhard, Mark H.; Zhu, Zihua

    2011-04-01

    The MAJORANA DEMONSTRATOR is a large array of ultra-low background high-purity germanium detectors, enriched in 76Ge, designed to search for zero-neutrino double-beta decay (0???). The DEMONSTRATOR will utilize 76Ge from Russia, and the first one gram sample was received from the supplier for analysis on April 24, 2011. The Environmental Molecular Sciences facility, a DOE user facility at PNNL, was used to make the required isotopic and chemical purity measurements that are essential to the quality assurance for the MAJORANA DEMONSTRATOR. The results of this first analysis are reported here.

  1. Small sample feature selection 

    E-Print Network [OSTI]

    Sima, Chao

    2007-09-17

    that the correction factor is a function of the dimensionality. The estimated standard deviations for the bolstering kernels are thus given by: ?i = ˆd(yi) ?p,i , for i = 1,...,n. (2.8) Clearly, as the number of samples in the training data increases, the standard de..., the DeArray software of the National Human Genome Research Institute calculates a multi-faceted quality metric for each spot [25]. This quality problem is a result of imperfections in RNA preparation, hybridization to the arrays, scanning, and also...

  2. September 2004 Water Sampling

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and700 GJO-2003-411-TACe: SUBJIHX:ontineSampling at

  3. September 2004 Water Sampling

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and700 GJO-2003-411-TACe: SUBJIHX:ontineSampling

  4. 2003 CBECS Sample Design

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet)Decade Year-0ProvedDecade Year-0Cubic MonthlyTechnical Information > Sample

  5. September 2004 Water Sampling

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouthReport for the t-) S/,,5 'a C O M1 theGroundwater Sampling at the

  6. September 2004 Water Sampling

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouthReport for the t-) S/,,5 'a C O M1 theGroundwater Sampling at

  7. September 2004 Water Sampling

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouthReport for the t-) S/,,5 'a C O M1 theGroundwater Sampling at4

  8. September 2004 Water Sampling

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouthReport for the t-) S/,,5 'a C O M1 theGroundwater Sampling at4and

  9. September 2004 Water Sampling

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouthReport for the t-) S/,,5 'a C O M1 theGroundwater Sampling

  10. September 2004 Water Sampling

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouthReport for the t-) S/,,5 'a C O M1 theGroundwater Sampling Rifle,

  11. September 2004 Water Sampling

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouthReport for the t-) S/,,5 'a C O M1 theGroundwater Sampling

  12. September 2004 Water Sampling

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouthReport for the t-) S/,,5 'a C O M1 theGroundwater Sampling4

  13. Entanglement sampling and applications

    E-Print Network [OSTI]

    Frédéric Dupuis; Omar Fawzi; Stephanie Wehner

    2015-06-15

    A natural measure for the amount of quantum information that a physical system E holds about another system A = A_1,...,A_n is given by the min-entropy Hmin(A|E). Specifically, the min-entropy measures the amount of entanglement between E and A, and is the relevant measure when analyzing a wide variety of problems ranging from randomness extraction in quantum cryptography, decoupling used in channel coding, to physical processes such as thermalization or the thermodynamic work cost (or gain) of erasing a quantum system. As such, it is a central question to determine the behaviour of the min-entropy after some process M is applied to the system A. Here we introduce a new generic tool relating the resulting min-entropy to the original one, and apply it to several settings of interest, including sampling of subsystems and measuring in a randomly chosen basis. The sampling results lead to new upper bounds on quantum random access codes, and imply the existence of "local decouplers". The results on random measurements yield new high-order entropic uncertainty relations with which we prove the optimality of cryptographic schemes in the bounded quantum storage model.

  14. NID Copper Sample Analysis

    SciTech Connect (OSTI)

    Kouzes, Richard T.; Zhu, Zihua

    2011-02-01

    The current focal point of the nuclear physics program at PNNL is the MAJORANA DEMONSTRATOR, and the follow-on Tonne-Scale experiment, a large array of ultra-low background high-purity germanium detectors, enriched in 76Ge, designed to search for zero-neutrino double-beta decay (0???). This experiment requires the use of germanium isotopically enriched in 76Ge. The DEMONSTRATOR will utilize 76Ge from Russia, but for the Tonne-Scale experiment it is hoped that an alternate technology under development at Nonlinear Ion Dynamics (NID) will be a viable, US-based, lower-cost source of separated material. Samples of separated material from NID require analysis to determine the isotopic distribution and impurities. The MAJORANA DEMONSTRATOR is a DOE and NSF funded project with a major science impact. DOE is funding NID through an SBIR grant for development of their separation technology for application to the Tonne-Scale experiment. The Environmental Molecular Sciences facility (EMSL), a DOE user facility at PNNL, has the required mass spectroscopy instruments for making these isotopic measurements that are essential to the quality assurance for the MAJORANA DEMONSTRATOR and for the development of the future separation technology required for the Tonne-Scale experiment. A sample of isotopically separated copper was provided by NID to PNNL for isotopic analysis as a test of the NID technology. The results of that analysis are reported here.

  15. Sample holder with optical features

    DOE Patents [OSTI]

    Milas, Mirko; Zhu, Yimei; Rameau, Jonathan David

    2013-07-30

    A sample holder for holding a sample to be observed for research purposes, particularly in a transmission electron microscope (TEM), generally includes an external alignment part for directing a light beam in a predetermined beam direction, a sample holder body in optical communication with the external alignment part and a sample support member disposed at a distal end of the sample holder body opposite the external alignment part for holding a sample to be analyzed. The sample holder body defines an internal conduit for the light beam and the sample support member includes a light beam positioner for directing the light beam between the sample holder body and the sample held by the sample support member.

  16. Application of Self-Propagating High Temperature Synthesis to the Fabrication of Actinide Bearing Nitride and Other Ceramic Nuclear Fuels

    SciTech Connect (OSTI)

    John J. Moore, Marissa M. Reigel, Collin D. Donohoue

    2009-04-30

    The project uses an exothermic combustion synthesis reaction, termed self-propagating high-temperature synthesis (SHS), to produce high quality, reproducible nitride fuels and other ceramic type nuclear fuels (cercers and cermets, etc.) in conjunction with the fabrication of transmutation fuels. The major research objective of the project is determining the fundamental SHS processing parameters by first using manganese as a surrogate for americium to produce dense Zr-Mn-N ceramic compounds. These fundamental principles will then be transferred to the production of dense Zr-Am-N ceramic materials. A further research objective in the research program is generating fundamental SHS processing data to the synthesis of (i) Pu-Am-Zr-N and (ii) U-Pu-Am-N ceramic fuels. In this case, Ce will be used as the surrogate for Pu, Mn as the surrogate for Am, and depleted uranium as the surrogate for U. Once sufficient fundamental data has been determined for these surrogate systems, the information will be transferred to Idaho National Laboratory (INL) for synthesis of Zr-Am-N, Pu-Am-Zr-N and U-Pu-Am-N ceramic fuels. The high vapor pressures of americium (Am) and americium nitride (AmN) are cause for concern in producing nitride ceramic nuclear fuel that contains Am. Along with the problem of Am retention during the sintering phases of current processing methods, are additional concerns of producing a consistent product of desirable homogeneity, density and porosity. Similar difficulties have been experienced during the laboratory scale process development stage of producing metal alloys containing Am wherein compact powder sintering methods had to be abandoned. Therefore, there is an urgent need to develop a low-temperature or low–heat fuel fabrication process for the synthesis of Am-containing ceramic fuels. Self-propagating high temperature synthesis (SHS), also called combustion synthesis, offers such an alternative process for the synthesis of Am nitride fuels. Although SHS takes thermodynamic advantage of the high combustion temperatures of these exothermic SHS reactions to synthesize the required compounds, the very fast heating, reaction and cooling rates can kinetically generate extremely fast reaction rates and facilitate the retention of volatile species within the rapidly propagating SHS reaction front. The initial objective of the research program is to use Mn as the surrogate for Am to synthesize a reproducible, dense, high quality Zr-Mn-N ceramic compound. Having determined the fundamental SHS reaction parameters and optimized SHS processing steps using Mn as the surrogate for Am, the technology will be transferred to Idaho National Laboratory to successfully synthesize a high quality Zr-Am-N ceramic fuel.

  17. Design, microstructure, and high-temperature behavior of silicon nitride sintered with rate-earth oxides

    SciTech Connect (OSTI)

    Ciniculk, M.K. (California Univ., Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering)

    1991-08-01

    The processing-microstructure-property relations of silicon nitride ceramics sintered with rare-earth oxide additives have been investigated with the aim of improving their high-temperature behavior. The additions of the oxides of Y, Sm, Gd, Dy, Er, or Yb were compositionally controlled to tailor the intergranular phase. The resulting microstructure consisted of {beta}-Si{sub 3}N{sub 4} grains and a crystalline secondary phase of RE{sub 2}Si{sub 2}O{sub 7}, with a thin residual amorphous phase present at grain boundaries. The lanthanide oxides were found to be as effective as Y{sub 2}O{sub 3} in densifying Si{sub 3}N{sub 4}, resulting in identical microstructures. The crystallization behavior of all six disilicates was similar, characterized by a limited nucleation and rapid growth mechanism resulting in large single crystals. Complete crystallization of the intergranular phase was obtained with the exception of a residual amorphous, observed at interfaces and believed to be rich in impurities, the cause of incomplete devitrification. The low resistance to oxidation of these materials was attributed to the minimization of amorphous phases via devitrification to disilicates, compatible with SiO{sub 2}, the oxidation product of Si{sub 3}N{sub 4}. The strength retention of these materials at 1300{degrees}C was found to be between 80% and 91% of room-temperature strength, due to crystallization of the secondary phase and a residual but refractory amorphous grain-boundary phase. The creep behavior was found to be strongly dependent on residual amorphous phase viscosity as well as on the oxidation behavior, as evidenced by the nonsteady-state creep rates of all materials. 122 refs., 51 figs., 12 tabs.

  18. Precipitation of aluminum nitride in a high strength maraging steel with low nitrogen content

    SciTech Connect (OSTI)

    Jeanmaire, G.; Dehmas, M.; Redjaïmia, A.; Puech, S.; Fribourg, G.

    2014-12-15

    In the present work, aluminum nitride (AlN) precipitation was investigated in a X23NiCoCrMoAl13-6-3 maraging steel with low nitrogen content (wt.% N = 5.5 ppm). A reliable and robust automatic method by scanning electron microscopy observations coupled with energy dispersive X-ray spectroscopy was developed for the quantification of AlN precipitates. The first stage was to identify the solvus temperature and to develop a heat treatment able to dissolve the AlN precipitates. The experimental determination of equilibrium conditions and solvus temperature show good agreement with ThermoCalc® simulation. Then, from this AlN-free state, the cooling rate, isothermal holding time and temperature were the subject of an intensive investigation in the austenite region of this maraging steel. In spite of the high temperatures used during heat treatments, the growth kinetic of the largest AlN precipitates (> 1 ?m) is slow. The cooling rate has a major effect on the size and the number density of AlN due to a higher driving force for nucleation at low temperatures. At last, quenching prior to isothermal annealing at high temperatures leads to fine and dense AlN precipitation, resulting from the martensite to austenite transformation. Experimental results will be discussed and compared with kinetic data obtained with the mobility database MobFe2 implemented in Dictra® software. - Highlights: • Slow dissolution kinetic of AlN precipitates due to both their large size and small chemical driving force • Significant effects of cooling rate prior isothermal heat treatment, holding time and temperature on AlN precipitation • Size of AlN precipitates can be reduced by quenching prior isothermal holding. • Fine precipitation of AlN related to the ? ? ? transformation.

  19. Fluid sampling tool

    DOE Patents [OSTI]

    Johnston, Roger G. (Los Alamos, NM); Garcia, Anthony R. E. (Espanola, NM); Martinez, Ronald K. (Santa Cruz, NM)

    2001-09-25

    The invention includes a rotatable tool for collecting fluid through the wall of a container. The tool includes a fluid collection section with a cylindrical shank having an end portion for drilling a hole in the container wall when the tool is rotated, and a threaded portion for tapping the hole in the container wall. A passageway in the shank in communication with at least one radial inlet hole in the drilling end and an opening at the end of the shank is adapted to receive fluid from the container. The tool also includes a cylindrical chamber affixed to the end of the shank opposite to the drilling portion thereof for receiving and storing fluid passing through the passageway. The tool also includes a flexible, deformable gasket that provides a fluid-tight chamber to confine kerf generated during the drilling and tapping of the hole. The invention also includes a fluid extractor section for extracting fluid samples from the fluid collecting section.

  20. Preliminary design study of small long life boiling water reactor (BWR) with tight lattice thorium nitride fuel

    SciTech Connect (OSTI)

    Trianti, Nuri E-mail: szaki@fi.itba.c.id; Su'ud, Zaki E-mail: szaki@fi.itba.c.id; Arif, Idam E-mail: szaki@fi.itba.c.id; Riyana, EkaSapta

    2014-09-30

    Neutronic performance of small long-life boiling water reactors (BWR) with thorium nitride based fuel has been performed. A recent study conducted on BWR in tight lattice environments (with a lower moderator percentage) produces small power reactor which has some specifications, i.e. 10 years operation time, power density of 19.1 watt/cc and maximum excess reactivity of about 4%. This excess reactivity value is smaller than standard reactivity of conventional BWR. The use of hexagonal geometry on the fuel cell of BWR provides a substantial effect on the criticality of the reactor to obtain a longer operating time. Supported by a tight concept lattice where the volume fraction of the fuel is greater than the moderator and fuel, Thorium Nitride give good results for fuel cell design on small long life BWR. The excess reactivity of the reactor can be reduced with the addition of gadolinium as burnable poisons. Therefore the hexagonal tight lattice fuel cell design of small long life BWR that has a criticality more than 20 years of operating time has been obtained.

  1. Growth mechanism of catalyst-and template-free group III-nitride nanorods Yong Sun Won a,b,,1

    E-Print Network [OSTI]

    Anderson, Timothy J.

    , Young Seok Kim a , Olga Kryliouk a,c,2,Ã, Timothy J. Anderson a a Department of Chemical Engineering calculation A1. Phase equilibria A3. Hydride vapor phase epitaxy B2. Semiconducting III­V materials a b s t r a c t A feasible mechanism for catalyst- and template-free group III-nitride nanorod growth by hydride

  2. C. Wetzel et al MRS Internet J. Nitride Semicond. Res. 10, 2 (2005) 1 Development of High Power Green Light Emitting Diode Chips

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2005-01-01

    Power Green Light Emitting Diode Chips C. Wetzel and T. Detchprohm Future Chips Constellation Abstract The development of high emission power green light emitting diodes chips using GaInN/GaN multi production-scale implementation of this green LED die process. Keywords: nitrides, light emitting diode

  3. Hydrogen storage in carbon nitride nanobells X. D. Bai, Dingyong Zhong, G. Y. Zhang, X. C. Ma, Shuang Liu, and E. G. Wanga)

    E-Print Network [OSTI]

    Zhang, Guangyu

    Hydrogen storage in carbon nitride nanobells X. D. Bai, Dingyong Zhong, G. Y. Zhang, X. C. Ma as hydrogen adsorbent. A hydrogen storage capacity up to 8 wt % was achieved reproducibly under ambient pressure and at temperature of 300 °C. The high hydrogen storage capacity under the moderate conditions

  4. Atomic layer structure of manganese atoms on wurtzite gallium nitride Abhijit Chinchore, Kangkang Wang, Wenzhi Lin, Jeongihm Pak, and Arthur R. Smitha

    E-Print Network [OSTI]

    This surface forms the starting point for Mn deposition. The Mn atomic layer was prepared by depositing MnAtomic layer structure of manganese atoms on wurtzite gallium nitride ,,0001¯... Abhijit Chinchore stage of growth. Certainly, a thin well-ordered layer of Mn atoms on GaN could be of great interest

  5. Aluminum Nitride Thin Films on Titanium for Piezoelectric MEMS Applications Seth Boeshore, Emily Parker, Vanni Lughi, Noel C. MacDonald

    E-Print Network [OSTI]

    MacDonald, Noel C.

    Aluminum Nitride Thin Films on Titanium for Piezoelectric MEMS Applications Seth Boeshore, Emily piezoelectric MEMS. Titanium is a new and attractive platform for MEMS because of its corrosion resistance with standard silicon MEMS processing and has found widespread use in film bulk acoustic resonators (FBARs

  6. Measurements of thermal transport in low stress silicon nitride films W. Holmes, a) J. M. Gildemeister, and P. L. Richards b)

    E-Print Network [OSTI]

    Richards, Paul L.

    Measurements of thermal transport in low stress silicon nitride films W. Holmes, a) J. M. Gildemeister, and P. L. Richards b) Physics Department, University of California, Berkeley, California 94720 and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 V. Kotsubo c

  7. Tantalum(V) Nitride Inverse Opals as Photonic Structures for Visible Wavelengths Alessandro Rugge, Jin-Seong Park, Roy G. Gordon,*, and Sarah H. Tolbert*,

    E-Print Network [OSTI]

    Tantalum(V) Nitride Inverse Opals as Photonic Structures for Visible Wavelengths Alessandro Rugge nanoscale waveguides. In this work we move toward that goal with the synthesis of an inverse opal thin film. Colloidal crystals, akin to the naturally occurring gem opal, diffract light at visible wave- lengths

  8. Specified assurance level sampling procedure

    SciTech Connect (OSTI)

    Willner, O.

    1980-11-01

    In the nuclear industry design specifications for certain quality characteristics require that the final product be inspected by a sampling plan which can demonstrate product conformance to stated assurance levels. The Specified Assurance Level (SAL) Sampling Procedure has been developed to permit the direct selection of attribute sampling plans which can meet commonly used assurance levels. The SAL procedure contains sampling plans which yield the minimum sample size at stated assurance levels. The SAL procedure also provides sampling plans with acceptance numbers ranging from 0 to 10, thus, making available to the user a wide choice of plans all designed to comply with a stated assurance level.

  9. Hetero-junctions of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization

    SciTech Connect (OSTI)

    Yap, Yoke Khin

    2013-03-14

    Hetero-junctions of boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs) are expected to have appealing new properties that are not available from pure BNNTs and CNTs. Theoretical studies indicate that BNNT/CNT junctions could be multifunctional and applicable as memory, spintronic, electronic, and photonics devices with tunable band structures. This will lead to energy and material efficient multifunctional devices that will be beneficial to the society. However, experimental realization of BNNT/CNT junctions was hindered by the absent of a common growth technique for BNNTs and CNTs. In fact, the synthesis of BNNTs was very challenging and may involve high temperatures (up to 3000 degree Celsius by laser ablation) and explosive chemicals. During the award period, we have successfully developed a simple chemical vapor deposition (CVD) technique to grow BNNTs at 1100-1200 degree Celsius without using dangerous chemicals. A series of common catalyst have then been identified for the synthesis of BNNTs and CNTs. Both of these breakthroughs have led to our preliminary success in growing two types of BNNT/CNT junctions and two additional new nanostructures: 1) branching BNNT/CNT junctions and 2) co-axial BNNT/CNT junctions, 3) quantum dots functionalized BNNTs (QDs-BNNTs), 4) BNNT/graphene junctions. We have started to understand their structural, compositional, and electronic properties. Latest results indicate that the branching BNNT/CNT junctions and QDs-BNNTs are functional as room-temperature tunneling devices. We have submitted the application of a renewal grant to continue the study of these new energy efficient materials. Finally, this project has also strengthened our collaborations with multiple Department of Energy�s Nanoscale Science Research Centers (NSRCs), including the Center for Nanophase Materials Sciences (CNMS) at Oak Ridge National Laboratory, and the Center for Integrated Nanotechnologies (CINTs) at Sandia National Laboratories and Los Alamos National Laboratory. Results obtained during the current funding period have led to the publication of twelve peer reviewed articles, three review papers, two book and one encyclopedia chapters, and thirty eight conference/seminar presentation. One US provisional patent and one international patent have also been filed.

  10. Dual mechanical behaviour of hydrogen in stressed silicon nitride thin films

    SciTech Connect (OSTI)

    Volpi, F. Braccini, M.; Pasturel, A.; Devos, A.; Raymond, G.; Morin, P.

    2014-07-28

    In the present article, we report a study on the mechanical behaviour displayed by hydrogen atoms and pores in silicon nitride (SiN) films. A simple three-phase model is proposed to relate the physical properties (stiffness, film stress, mass density, etc.) of hydrogenated nanoporous SiN thin films to the volume fractions of hydrogen and pores. This model is then applied to experimental data extracted from films deposited by plasma enhanced chemical vapour deposition, where hydrogen content, stress, and mass densities range widely from 11% to 30%, ?2.8 to 1.5?GPa, and 2.0 to 2.8?g/cm{sup 3}, respectively. Starting from the conventional plotting of film's Young's modulus against film porosity, we first propose to correct the conventional calculation of porosity volume fraction with the hydrogen content, thus taking into account both hydrogen mass and concentration. The weight of this hydrogen-correction is found to evolve linearly with hydrogen concentration in tensile films (in accordance with a simple “mass correction” of the film density calculation), but a clear discontinuity is observed toward compressive stresses. Then, the effective volume occupied by hydrogen atoms is calculated taking account of the bond type (N-H or Si-H bonds), thus allowing a precise extraction of the hydrogen volume fraction. These calculations applied to tensile films show that both volume fractions of hydrogen and porosity are similar in magnitude and randomly distributed against Young's modulus. However, the expected linear dependence of the Young's modulus is clearly observed when both volume fractions are added. Finally, we show that the stiffer behaviour of compressive films cannot be only explained on the basis of this (hydrogen?+?porosity) volume fraction. Indeed this stiffness difference relies on a dual mechanical behaviour displayed by hydrogen atoms against the film stress state: while they participate to the stiffness in compressive films, hydrogen atoms mainly behave like pores in tensile films where they do not participate to the film stiffness.

  11. 3 - DJ : sampling as design

    E-Print Network [OSTI]

    Patel, Sayjel Vijay

    2015-01-01

    3D Sampling is introduced as a new spatial craft that can be applied to architectural design, akin to how sampling is applied in the field of electronic music. Through the development of 3-DJ, a prototype design software, ...

  12. Electronic stiffness of a superconducting niobium nitride single crystal under pressure Xiao-Jia Chen, Viktor V. Struzhkin, Zhigang Wu, Ronald E. Cohen, Simon Kung,* Ho-kwang Mao, and Russell J. Hemley

    E-Print Network [OSTI]

    Wu, Zhigang

    Electronic stiffness of a superconducting niobium nitride single crystal under pressure Xiao report a quantitative study of pressure effects on the superconducting transition temperature Tc transition temperatures Tc's of materials, pur- suing new classes of superconductors and shedding light

  13. Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy

    SciTech Connect (OSTI)

    Sutter, P. Sutter, E.

    2014-09-01

    We assess scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) for thickness measurements on few-layer hexagonal boron nitride (h-BN), the layered dielectric of choice for integration with graphene and other two-dimensional materials. Observations on h-BN islands with large, atomically flat terraces show that the secondary electron intensity in SEM reflects monolayer height changes in films up to least 10 atomic layers thickness. From a quantitative analysis of AES data, the energy-dependent electron escape depth in h-BN films is deduced. The results show that AES is suitable for absolute thickness measurements of few-layer h-BN of 1 to 6 layers.

  14. Effects of boron-nitride substrates on Stone-Wales defect formation in graphene: An ab initio molecular dynamics study

    SciTech Connect (OSTI)

    Jin, K.; Xiao, H. Y. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States); Zhang, Y. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States); Weber, W. J., E-mail: wjweber@utk.edu [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

    2014-05-19

    Ab initio molecular dynamics simulations are performed to investigate the effects of a boron nitride (BN) substrate on Stone-Wales (SW) defect formation and recovery in graphene. It is found that SW defects can be created by an off-plane recoil atom that interacts with the BN substrate. A mechanism with complete bond breakage for formation of SW defects in suspended graphene is also revealed for recoils at large displacement angles. In addition, further irradiation can result in recovery of the SW defects through a bond rotation mechanism in both graphene and graphene/BN, and the substrate has little effect on the recovery process. This study indicates that the BN substrate enhances the irradiation resistance of graphene.

  15. Low noise high-T{sub c} superconducting bolometers on silicon nitride membranes for far-infrared detection

    SciTech Connect (OSTI)

    de Nivelle, M.J.; Bruijn, M.P.; de Vries, R.; Wijnbergen, J.J.; de Korte, P.A. [Space Research Organization Netherlands, Sorbonnelaan 2, 3584 CA Utrecht (The Netherlands)] [Space Research Organization Netherlands, Sorbonnelaan 2, 3584 CA Utrecht (The Netherlands); Sanchez, S.; Elwenspoek, M. [MESA Research Institute, Twente University, P.O. Box 217, 7500 AE Enschede (The Netherlands)] [MESA Research Institute, Twente University, P.O. Box 217, 7500 AE Enschede (The Netherlands); Heidenblut, T.; Schwierzi, B. [Institut fuer Halbleitertechnologie und Werkstoffe der Elektrotechnik, Universitaet Hannover, Appelstrasse 11A, D-30167 Hannover (Germany)] [Institut fuer Halbleitertechnologie und Werkstoffe der Elektrotechnik, Universitaet Hannover, Appelstrasse 11A, D-30167 Hannover (Germany); Michalke, W.; Steinbeiss, E. [Institut fuer Physikalische Hochtechnologie, Helmholtzweg 4, D-07743 Jena (Germany)] [Institut fuer Physikalische Hochtechnologie, Helmholtzweg 4, D-07743 Jena (Germany)

    1997-11-01

    High-T{sub c} GdBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} superconductor bolometers with operation temperatures near 89 K, large receiving areas of 0.95mm{sup 2} and very high detectivity have been made. The bolometers are supported by 0.62 {mu}m thick silicon nitride membranes. A specially developed silicon-on-nitride layer was used to enable the epitaxial growth of the high-T{sub c} superconductor. Using a gold black absorption layer an absorption efficiency for wavelengths between 70 and 200 {mu}m of about 83{percent} has been established. The noise of the best devices is fully dominated by the intrinsic phonon noise of the thermal conductance G, and not by the 1/f noise of the superconducting film. The temperature dependence of the noise and the resulting optimum bias temperature have been investigated. In the analysis the often neglected effect of electrothermal feedback has been taken into account. The minimum electrical noise equivalent power (NEP) of a bolometer with a time constant {tau} of 95 ms is 2.9pW/Hz{sup 1/2} which corresponds with an electrical detectivity D{sup {asterisk}} of 3.4{times}10{sup 10}cmHz{sup 1/2}/W. Similar bolometers with {tau}=27ms and NEP=3.8pW/Hz{sup 1/2} were also made. No degradation of the bolometers could be observed after vibration tests, thermal cycling and half a year storage. Measurements of the noise of a Pr doped YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} film with T{sub c}=40K show that with such films the performance of air bridge type high-T{sub c} bolometers could be improved. {copyright} {ital 1997 American Institute of Physics.}

  16. The etching process of boron nitride by alkali and alkaline earth fluorides under high pressure and high temperature

    SciTech Connect (OSTI)

    Guo, W., E-mail: guowei1982cry@163.com [College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China); Ma, H.A.; Jia, X. [National Key Lab of Superhard Materials, Jilin University, Changchun 130012 (China)

    2014-03-01

    Graphical abstract: - Highlights: • Appropriate etch processes of hBN and cBN under HPHT are proposed. • The degree of the crystallization of hBN was decreased. • A special cBN growth mechanism with a triangular unit is proposed. • Plate-shape cBN crystals with large ratio of length to thickness were obtained. • A strategy provides useful guidance for controlling the cBN morphology. - Abstract: Some new etching processes of hexagonal boron nitride (hBN) and cubic boron nitride (cBN) under high pressure and high temperature in the presence of alkali and alkaline earth fluorides have been discussed. It is found that hBN is etched distinctly by alkali and alkaline earth fluorides and the morphology of hBN is significantly changed from plate-shape to spherical-shape. Based on the “graphitization index” values of hBN, the degree of the crystallization of hBN under high pressure and high temperature decreases in the sequence of LiF > CaF{sub 2} > MgF{sub 2}. This facilitates the formation of high-quality cBN single crystals. Different etch steps, pits, and islands are observed on cBN surface, showing the strong etching by alkali and alkaline earth fluorides and the tendency of layer-by-layer growth. A special layer growth mechanism of cBN with a triangular unit has been found. Furthermore, the morphologies of cBN crystals are apparently affected by a preferential surface etching of LiF, CaF{sub 2} and MgF{sub 2}. Respectively, the plate-shape and tetrahedral cBN crystals can be obtained in the presence of different alkali and alkaline earth fluorides.

  17. Homeowner Soil Sample Information Form 

    E-Print Network [OSTI]

    Provin, Tony

    2007-04-11

    THE TEXAS A&M UNIVERSITY SYSTEM Soil, Water and Forage Testing Laboratory Urban and Homeowner Soil Sample Information Form See sampling procedures and mailing instructions on the back of this form. (PLEASE DO NOT SEND CASH) SU07 E-444... (7-07) Results will be mailed to this address ONLY Address City Phone County where sampled Name Laboratory # (For Lab Use Only) State Zip Payment (DO NOT SEND CASH). Amount Paid $ SUBMITTED BY: Check Money Order Make Checks Payable to: Soil...

  18. Acceptance sampling using judgmental and randomly selected samples

    SciTech Connect (OSTI)

    Sego, Landon H.; Shulman, Stanley A.; Anderson, Kevin K.; Wilson, John E.; Pulsipher, Brent A.; Sieber, W. Karl

    2010-09-01

    We present a Bayesian model for acceptance sampling where the population consists of two groups, each with different levels of risk of containing unacceptable items. Expert opinion, or judgment, may be required to distinguish between the high and low-risk groups. Hence, high-risk items are likely to be identifed (and sampled) using expert judgment, while the remaining low-risk items are sampled randomly. We focus on the situation where all observed samples must be acceptable. Consequently, the objective of the statistical inference is to quantify the probability that a large percentage of the unsampled items in the population are also acceptable. We demonstrate that traditional (frequentist) acceptance sampling and simpler Bayesian formulations of the problem are essentially special cases of the proposed model. We explore the properties of the model in detail, and discuss the conditions necessary to ensure that required samples sizes are non-decreasing function of the population size. The method is applicable to a variety of acceptance sampling problems, and, in particular, to environmental sampling where the objective is to demonstrate the safety of reoccupying a remediated facility that has been contaminated with a lethal agent.

  19. Sample Residential Program Term Sheet

    Broader source: Energy.gov [DOE]

    A sample for defining and elaborating on the specifics of a clean energy loan program. Author: U.S. Department of Energy

  20. Adaptive Sampling for Environmental Robotics

    E-Print Network [OSTI]

    Mohammad Rahimi; Richard Pon; Deborah Estrin; William J. Kaiser; Mani Srivastava; Gaurav S. Sukhatme

    2003-01-01

    186, 2003. S. Thrun, “Robotics Mapping: A survey”, Exploringtechnique to environmental robotics applications includingSampling for Environmental Robotics Mohammad Rahimi †,‡‡ ,

  1. Defining And Characterizing Sample Representativeness For DWPF Melter Feed Samples

    SciTech Connect (OSTI)

    Shine, E. P.; Poirier, M. R.

    2013-10-29

    Representative sampling is important throughout the Defense Waste Processing Facility (DWPF) process, and the demonstrated success of the DWPF process to achieve glass product quality over the past two decades is a direct result of the quality of information obtained from the process. The objective of this report was to present sampling methods that the Savannah River Site (SRS) used to qualify waste being dispositioned at the DWPF. The goal was to emphasize the methodology, not a list of outcomes from those studies. This methodology includes proven methods for taking representative samples, the use of controlled analytical methods, and data interpretation and reporting that considers the uncertainty of all error sources. Numerous sampling studies were conducted during the development of the DWPF process and still continue to be performed in order to evaluate options for process improvement. Study designs were based on use of statistical tools applicable to the determination of uncertainties associated with the data needs. Successful designs are apt to be repeated, so this report chose only to include prototypic case studies that typify the characteristics of frequently used designs. Case studies have been presented for studying in-tank homogeneity, evaluating the suitability of sampler systems, determining factors that affect mixing and sampling, comparing the final waste glass product chemical composition and durability to that of the glass pour stream sample and other samples from process vessels, and assessing the uniformity of the chemical composition in the waste glass product. Many of these studies efficiently addressed more than one of these areas of concern associated with demonstrating sample representativeness and provide examples of statistical tools in use for DWPF. The time when many of these designs were implemented was in an age when the sampling ideas of Pierre Gy were not as widespread as they are today. Nonetheless, the engineers and statisticians used carefully thought out designs that systematically and economically provided plans for data collection from the DWPF process. Key shared features of the sampling designs used at DWPF and the Gy sampling methodology were the specification of a standard for sample representativeness, an investigation that produced data from the process to study the sampling function, and a decision framework used to assess whether the specification was met based on the data. Without going into detail with regard to the seven errors identified by Pierre Gy, as excellent summaries are readily available such as Pitard [1989] and Smith [2001], SRS engineers understood, for example, that samplers can be biased (Gy?s extraction error), and developed plans to mitigate those biases. Experiments that compared installed samplers with more representative samples obtained directly from the tank may not have resulted in systematically partitioning sampling errors into the now well-known error categories of Gy, but did provide overall information on the suitability of sampling systems. Most of the designs in this report are related to the DWPF vessels, not the large SRS Tank Farm tanks. Samples from the DWPF Slurry Mix Evaporator (SME), which contains the feed to the DWPF melter, are characterized using standardized analytical methods with known uncertainty. The analytical error is combined with the established error from sampling and processing in DWPF to determine the melter feed composition. This composition is used with the known uncertainty of the models in the Product Composition Control System (PCCS) to ensure that the wasteform that is produced is comfortably within the acceptable processing and product performance region. Having the advantage of many years of processing that meets the waste glass product acceptance criteria, the DWPF process has provided a considerable amount of data about itself in addition to the data from many special studies. Demonstrating representative sampling directly from the large Tank Farm tanks is a difficult, if not unsolvable enterprise due to li

  2. Environmental surveillance master sampling schedule

    SciTech Connect (OSTI)

    Bisping, L.E.

    1995-02-01

    Environmental surveillance of the Hanford Site and surrounding areas is conducted by the Pacific Northwest Laboratory (PNL) for the U.S. Department of Energy (DOE). This document contains the planned 1994 schedules for routine collection of samples for the Surface Environmental Surveillance Project (SESP), Drinking Water Project, and Ground-Water Surveillance Project. Samples are routinely collected for the SESP and analyzed to determine the quality of air, surface water, soil, sediment, wildlife, vegetation, foodstuffs, and farm products at Hanford Site and surrounding communities. The responsibility for monitoring onsite drinking water falls outside the scope of the SESP. PNL conducts the drinking water monitoring project concurrent with the SESP to promote efficiency and consistency, utilize expertise developed over the years, and reduce costs associated with management, procedure development, data management, quality control, and reporting. The ground-water sampling schedule identifies ground-water sampling .events used by PNL for environmental surveillance of the Hanford Site. Sampling is indicated as annual, semi-annual, quarterly, or monthly in the sampling schedule. Some samples are collected and analyzed as part of ground-water monitoring and characterization programs at Hanford (e.g. Resources Conservation and Recovery Act (RCRA), Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA), or Operational). The number of samples planned by other programs are identified in the sampling schedule by a number in the analysis column and a project designation in the Cosample column. Well sampling events may be merged to avoid redundancy in cases where sampling is planned by both-environmental surveillance and another program.

  3. Hazard Sampling Dialog General Layout

    E-Print Network [OSTI]

    Zhang, Tao

    1 Hazard Sampling Dialog General Layout The dialog's purpose is to display information about the hazardous material being sampled by the UGV so either the system or the UV specialist can identify the risk level of the hazard. The dialog is associated with the hazmat reading icons (Table 1). Components

  4. Database Sampling with Functional Dependencies

    E-Print Network [OSTI]

    Riera, Jesús Bisbal

    Database Sampling with Functional Dependencies Jes´us Bisbal, Jane Grimson Department of Computer there is a need to prototype the database which the applications will use when in operation. A prototype database can be built by sampling data from an existing database. Including relevant semantic information when

  5. 200 area TEDF sample schedule

    SciTech Connect (OSTI)

    Brown, M.J.

    1995-03-22

    This document summarizes the sampling criteria associated with the 200 Area Treatment Effluent Facility (TEDF) that are needed to comply with the requirements of the Washington State Discharge Permit No. WA ST 4502 and good engineering practices at the generator streams that feed into TEDF. In addition, this document Identifies the responsible parties for both sampling and data transference.

  6. Sample push-out fixture

    DOE Patents [OSTI]

    Biernat, John L. (Scotia, NY)

    2002-11-05

    This invention generally relates to the remote removal of pelletized samples from cylindrical containment capsules. V-blocks are used to receive the samples and provide guidance to push out rods. Stainless steel liners fit into the v-channels on the v-blocks which permits them to be remotely removed and replaced or cleaned to prevent cross contamination between capsules and samples. A capsule holder securely holds the capsule while allowing manual up/down and in/out movement to align each sample hole with the v-blocks. Both end sections contain identical v-blocks; one that guides the drive out screw and rods or manual push out rods and the other to receive the samples as they are driven out of the capsule.

  7. Sampling Report for August 15, 2014 WIPP Samples

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and pulley system was constructed to move a camera for documentation and close-up pictures. The sampling device is located at the end of the boom. (Note, this picture is from...

  8. Studies on Atmospheric Ageing of Nanosized Silicon Nitride Powders J.Szpvlgyi1

    E-Print Network [OSTI]

    Gubicza, Jenõ

    by the vapor phase reaction of sili- con tetrachloride and ammonia has been studied in argon gas, in dry air in the bulk or the sur- face properties on storage in argon gas for 90 days. However, samples stored in dry of silicon tetrachloride and ammonia have interesting properties including high chemical purity, amorphous

  9. Depth-discrete sampling port

    DOE Patents [OSTI]

    Pemberton, Bradley E. (Aiken, SC); May, Christopher P. (Columbia, MD); Rossabi, Joseph (Aiken, SC); Riha, Brian D. (Augusta, GA); Nichols, Ralph L. (North Augusta, SC)

    1998-07-07

    A sampling port is provided which has threaded ends for incorporating the port into a length of subsurface pipe. The port defines an internal receptacle which is in communication with subsurface fluids through a series of fine filtering slits. The receptacle is in further communication through a bore with a fitting carrying a length of tubing there which samples are transported to the surface. Each port further defines an additional bore through which tubing, cables, or similar components of adjacent ports may pass.

  10. Sandia Energy - III-Nitride core-shell nanowire arrayed solar cells

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust, High-Throughput Analysis ofSample SULIColinEnergy

  11. Sample Results from Routine Salt Batch 7 Samples

    SciTech Connect (OSTI)

    Peters, T.

    2015-05-13

    Strip Effluent Hold Tank (SEHT) and Decontaminated Salt Solution Hold Tank (DSSHT) samples from several of the “microbatches” of Integrated Salt Disposition Project (ISDP) Salt Batch (“Macrobatch”) 7B have been analyzed for 238Pu, 90Sr, 137Cs, Inductively Coupled Plasma Emission Spectroscopy (ICPES), and Ion Chromatography Anions (IC-A). The results from the current microbatch samples are similar to those from earlier samples from this and previous macrobatches. The Actinide Removal Process (ARP) and the Modular Caustic-Side Solvent Extraction Unit (MCU) continue to show more than adequate Pu and Sr removal, and there is a distinct positive trend in Cs removal, due to the use of the Next Generation Solvent (NGS). The Savannah River National Laboratory (SRNL) notes that historically, most measured Concentration Factor (CF) values during salt processing have been in the 12-14 range. However, recent processing gives CF values closer to 11. This observation does not indicate that the solvent performance is suffering, as the Decontamination Factor (DF) has still maintained consistently high values. Nevertheless, SRNL will continue to monitor for indications of process upsets. The bulk chemistry of the DSSHT and SEHT samples do not show any signs of unusual behavior.

  12. Inertial impaction air sampling device

    DOE Patents [OSTI]

    Dewhurst, K.H.

    1987-12-10

    An inertial impactor to be used in an air sampling device for collection of respirable size particles in ambient air which may include a graphite furnace as the impaction substrate in a small-size, portable, direct analysis structure that gives immediate results and is totally self-contained allowing for remote and/or personal sampling. The graphite furnace collects suspended particles transported through the housing by means of the air flow system, and these particles may be analyzed for elements, quantitatively and qualitatively, by atomic absorption spectrophotometry. 3 figs.

  13. Inertial impaction air sampling device

    DOE Patents [OSTI]

    Dewhurst, K.H.

    1990-05-22

    An inertial impactor is designed which is to be used in an air sampling device for collection of respirable size particles in ambient air. The device may include a graphite furnace as the impaction substrate in a small-size, portable, direct analysis structure that gives immediate results and is totally self-contained allowing for remote and/or personal sampling. The graphite furnace collects suspended particles transported through the housing by means of the air flow system, and these particles may be analyzed for elements, quantitatively and qualitatively, by atomic absorption spectrophotometry. 3 figs.

  14. Communication Engineering Systems Sampling Theorem &

    E-Print Network [OSTI]

    Kovintavewat, Piya

    x nT nx continuous sample quantized sample binary stream x t x t 2 D 7 D 8 D ( ) 7L MIDRISE s T 3 DPCM (1-bit quantizer) 1 (unit delay) 17 1n n nv x x , 0 sgn , 0 n n n n v v v v 1n n nx v x 2 DM #12;.. DM 18 1n n nx x v nx 1 1 sgn sgn n n n i ii i x v v #12;.. 19 1 b s b R mf T #12

  15. The Ocean Sampling Day Consortium

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kopf, Anna; Bicak, Mesude; Kottmann, Renzo; Schnetzer, Julia; Kostadinov, Ivaylo; Lehmann, Katja; Fernandez-Guerra, Antonio; Jeanthon, Christian; Rahav, Eyal; Ullrich, Matthias; et al

    2015-06-19

    In this study, Ocean Sampling Day was initiated by the EU-funded Micro B3 (Marine Microbial Biodiversity, Bioinformatics, Biotechnology) project to obtain a snapshot of the marine microbial biodiversity and function of the world’s oceans. It is a simultaneous global mega-sequencing campaign aiming to generate the largest standardized microbial data set in a single day. This will be achievable only through the coordinated efforts of an Ocean Sampling Day Consortium, supportive partnerships and networks between sites. This commentary outlines the establishment, function and aims of the Consortium and describes our vision for a sustainable study of marine microbial communities and theirmore »embedded functional traits.« less

  16. Low Noise Titanium Nitride KIDs for SuperSpec: A Millimeter-Wave On-Chip Spectrometer

    E-Print Network [OSTI]

    Hailey-Dunsheath, S; Barry, P S; Bradford, C M; Chapman, S; Che, G; Glenn, J; Hollister, M; Kovács, A; LeDuc, H G; Mauskopf, P; McKenney, C; O'Brient, R; Padin, S; Reck, T; Shiu, C; Tucker, C E; Wheeler, J; Williamson, R; Zmuidzinas, J

    2015-01-01

    SuperSpec is a novel on-chip spectrometer we are developing for multi-object, moderate resolution (R = 100 - 500), large bandwidth (~1.65:1) submillimeter and millimeter survey spectroscopy of high-redshift galaxies. The spectrometer employs a filter bank architecture, and consists of a series of half-wave resonators formed by lithographically-patterned superconducting transmission lines. The signal power admitted by each resonator is detected by a lumped element titanium nitride (TiN) kinetic inductance detector (KID) operating at 100 - 200 MHz. We have tested a new prototype device that achieves the targeted R = 100 resolving power, and has better detector sensitivity and optical efficiency than previous devices. We employ a new method for measuring photon noise using both coherent and thermal sources of radiation to cleanly separate the contributions of shot and wave noise. We report an upper limit to the detector NEP of $1.4\\times10^{-17}$ W Hz$^{-1/2}$, within 10% of the photon noise limited NEP for a gr...

  17. Correlation of photothermal conversion on the photo-induced deformation of amorphous carbon nitride films prepared by reactive sputtering

    SciTech Connect (OSTI)

    Harata, T.; Aono, M. Kitazawa, N.; Watanabe, Y.

    2014-08-04

    The photo-induced deformation of hydrogen-free amorphous carbon nitride (a-CN{sub x}) films was investigated under visible-light illumination. The films gave rise to photothermal conversion by irradiation. In this study, we investigated the effects of thermal energy generated by irradiation on the deformation of a-CN{sub x}/ultrathin substrate bimorph specimens. The films were prepared on both ultrathin Si and SiO{sub 2} substrates by reactive radio-frequency magnetron sputtering from a graphite target in the presence of pure nitrogen gas. The temperature of the film on the SiO{sub 2} substrate increased as the optical band-gap of the a-CN{sub x} was decreased. For the film on Si, the temperature remained constant. The deformation degree of the films on Si and SiO{sub 2} substrates were approximately the same. Thus, the deformation of a-CN{sub x} films primarily induced by photon energy directly.

  18. Transition metal carbides, nitrides and borides, and their oxygen containing analogs useful as water gas shift catalysts

    DOE Patents [OSTI]

    Thompson, Levi T.; Patt, Jeremy; Moon, Dong Ju; Phillips, Cory

    2003-09-23

    Mono- and bimetallic transition metal carbides, nitrides and borides, and their oxygen containing analogs (e.g. oxycarbides) for use as water gas shift catalysts are described. In a preferred embodiment, the catalysts have the general formula of M1.sub.A M2.sub.B Z.sub.C O.sub.D, wherein M1 is selected from the group consisting of Mo, W, and combinations thereof; M2 is selected from the group consisting of Fe, Ni, Cu, Co, and combinations thereof; Z is selected from the group consisting of carbon, nitrogen, boron, and combinations thereof; A is an integer; B is 0 or an integer greater than 0; C is an integer; O is oxygen; and D is 0 or an integer greater than 0. The catalysts exhibit good reactivity, stability, and sulfur tolerance, as compared to conventional water shift gas catalysts. These catalysts hold promise for use in conjunction with proton exchange membrane fuel cell powered systems.

  19. Graphitic carbon nitride/Cu{sub 2}O heterojunctions: Preparation, characterization, and enhanced photocatalytic activity under visible light

    SciTech Connect (OSTI)

    Tian, Yanlong; Chang, Binbin; Fu, Jie; Zhou, Baocheng; Liu, Jiyang; Xi, Fengna; Dong, Xiaoping, E-mail: xpdong@zstu.edu.cn

    2014-04-01

    As a metal-free semiconductor material, graphitic carbon nitride (C{sub 3}N{sub 4}), the high recombination rate of photogenerated charges and insufficient sunlight absorption limit its solar-based photocatalytic activity. Here, we reported the heterojunctions of C{sub 3}N{sub 4}–Cu{sub 2}O with a p–n junction structure, which was synthesized by a hydrothermal method. The HR-TEM result revealed an intimate interface between C{sub 3}N{sub 4} and Cu{sub 2}O in the heterojunction, and UV–vis diffuse reflection spectra showed their extended spectral response in the visible region compared with pure C{sub 3}N{sub 4}. These excellent structural and spectral properties, as well as p–n junction structures, endowed the C{sub 3}N{sub 4}–Cu{sub 2}O heterojunctions with enhanced photocatalytic activities. The possible photocatalytic mechanism that photogenerated holes as the mainly oxidant species in photocatalysis was proposed base on the trapping experiments. - Highlights: • A hydrothermal method was used to prepare C3N{sub 4}–Cu{sub 2}O heterojunction. • The resulting heterojunction possesses broader absorption in the visible region. • The material owns a high visible light activity and stability for dye degradation.

  20. Performance analysis of boron nitride embedded armchair graphene nanoribbon metal–oxide–semiconductor field effect transistor with Stone Wales defects

    SciTech Connect (OSTI)

    Chanana, Anuja; Sengupta, Amretashis; Mahapatra, Santanu

    2014-01-21

    We study the performance of a hybrid Graphene-Boron Nitride armchair nanoribbon (a-GNR-BN) n-MOSFET at its ballistic transport limit. We consider three geometric configurations 3p, 3p + 1, and 3p + 2 of a-GNR-BN with BN atoms embedded on either side (2, 4, and 6 BN) on the GNR. Material properties like band gap, effective mass, and density of states of these H-passivated structures are evaluated using the Density Functional Theory. Using these material parameters, self-consistent Poisson-Schrodinger simulations are carried out under the Non Equilibrium Green's Function formalism to calculate the ballistic n-MOSFET device characteristics. For a hybrid nanoribbon of width ?5?nm, the simulated ON current is found to be in the range of 265??A–280??A with an ON/OFF ratio 7.1 × 10{sup 6}–7.4 × 10{sup 6} for a V{sub DD}?=?0.68?V corresponding to 10?nm technology node. We further study the impact of randomly distributed Stone Wales (SW) defects in these hybrid structures and only 2.5% degradation of ON current is observed for SW defect density of 3.18%.

  1. Effect of substrate temperature on the microstructural properties of titanium nitride nanowires grown by pulsed laser deposition

    SciTech Connect (OSTI)

    Gbordzoe, S. Kotoka, R.; Craven, Eric; Kumar, D.; Wu, F.; Narayan, J.

    2014-08-14

    The current work reports on the growth and microstructural characterization of titanium nitride (TiN) nanowires on single crystal silicon substrates using a pulsed laser deposition method. The physical and microstructural properties of the nanowires were characterized using field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The corrosion properties of the TiN nanowires compared to TiN thin film were evaluated using Direct Current potentiodynamic and electrochemical impedance spectroscopy. The nanowires corroded faster than the TiN thin film, because the nanowires have a larger surface area which makes them more reactive in a corrosive environment. It was observed from the FESEM image analyses that as the substrate temperature increases from 600?°C to 800?°C, there was an increase in both diameter (25?nm–50?nm) and length (150?nm–250?nm) of the nanowire growth. There was also an increase in spatial density with an increase of substrate temperature. The TEM results showed that the TiN nanowires grow epitaxially with the silicon substrate via domain matching epitaxy paradigm, despite a large misfit.

  2. FP-LAPW investigation of electronic, magnetic, elastic and thermal properties of Fe-doped zirconium nitride

    SciTech Connect (OSTI)

    Sirajuddeen, M. Mohamed Sheik, E-mail: msheiksiraj@bsauniv.ac.in; Banu, I. B. Shameem [Department of Physics, B. S. Abdur Rahman University, Chennai-600 048 (India)

    2014-05-15

    Full Potential- Linear Augmented Plane Wave (FP-LAPW) method has been employed to study the electronic, magnetic, elastic and thermal properties of Fe-doped Zirconium nitride. In this work, Fe-atoms were doped into the super cell of ZrN in doping concentrations of 12.5%, 25% and 37.5% to replace Zr atoms. Electronic properties such as band structure and DOS were plotted and compared for the doped compounds. Charge density contours were plotted for all the doped compounds. The non-magnetic ZrN doped in different Fe concentrations were found to be ferromagnetic. Magnetic moments have been calculated and compared. Elastic properties have been studied and compared with electronic properties. Appearance of magnetic ordering and its influence with the elastic properties have been reported. Impact of 3d states of Fe in DOS plot on the elastic nature of the compounds has been highlighted. Thermal properties such as Debye temperature and molar heat capacities at low temperature have been determined. Debye temperature is found to decrease with higher doping concentrations. Molar heat capacities are found to increase with higher concentrations of Fe atoms.

  3. AFRICAN AMERICAN PSYCHOLOGY Sample Syllabus

    E-Print Network [OSTI]

    Hopfinger, Joseph B.

    AFRICAN AMERICAN PSYCHOLOGY PSYC 503 Sample Syllabus Course Description and Overview: This course examines the psychology of the African American experience. We begin the course with an overview of Black/African American psychology as an evolving field of study and consider the Black/African American Psychology

  4. Design of bioaerosol sampling inlets 

    E-Print Network [OSTI]

    Nene, Rohit Ravindra

    2007-09-17

    An experimental investigation involving the design, fabrication, and testing of an ambient sampling inlet and two additional Stokes-scaled inlets is presented here. Testing of each inlet was conducted at wind speeds of 2, 8, and 24 km/h (0.55, 2...

  5. Sandia Energy - BES Web Highlight: Single-mode gallium nitride nanowire

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust, High-Throughput Analysis ofSample SULI ProgramPhysical Societylasers BES Web

  6. Rock Sampling | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/ColoradoRemsenburg-Speonk, NewMichigan: Energy Resources JumpMtSampling Jump to:

  7. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    SciTech Connect (OSTI)

    Kavitha, A.; Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India); Subramanian, N. Sankara [Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India); Loganathan, S. [Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  8. Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications

    SciTech Connect (OSTI)

    Russell D. Dupuis

    2006-01-01

    We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the second year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The second year activities were focused on the development of p-type layer that has less/no detrimental thermal annealing effect on green LED active region as well as excellent structural and electrical properties and the development of green LED active region that has superior luminescence quality for {lambda} {approx}540nm green LEDs. We have also studied the thermal annealing effect on blue and green LED active region during the p-type layer growth. As a progress highlight, we obtained green-LED-active-region-friendly In{sub 0.04}Ga{sub 0.96}N:Mg exhibiting low resistivity with higher hole concentration (p=2.0 x 10{sup 18} cm{sup -3} and a low resistivity of 0.5 {Omega}-cm) and improved optical quality green LED active region emitting at {lambda} {approx}540nm by electroluminescence. The active region of the green LEDs was found to be much more sensitive to the thermal annealing effect during the p-type layer growth than that of the blue LEDs. We have designed grown, fabricated green LED structures for both 520 nm and 540 nm for the evaluation of second year green LED development.

  9. Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications

    SciTech Connect (OSTI)

    Russell Dupuis

    2007-06-30

    We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers whole years of the three-year program 'Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications'. The research activities were focused on the development of p-type layer that has less/no detrimental thermal annealing effect on as well as excellent structural and electrical properties and the development of green LED active region that has superior luminescence quality for {lambda}{approx}540nm green LEDs. We have also studied (1) the thermal annealing effect on blue and green LED active region during the p-type layer growth; (2) the effect of growth parameters and structural factors for LED active region on electroluminescence properties; (3) the effect of substrates and orientation on electrical and electro-optical properties of green LEDs. As a progress highlight, we obtained green-LED-active-region-friendly In{sub 0.04}Ga{sub 0.96}N:Mg exhibiting low resistivity with higher hole concentration (p=2.0 x 10{sup 18} cm{sup -3} and a low resistivity of 0.5 {omega}-cm) and improved optical quality green LED active region emitting at {approx}540nm by electroluminescence. The LEDs with p-InGaN layer can act as a quantum-confined Stark effect mitigation layer by reducing strain in the QW. We also have achieved (projected) peak IQE of {approx}25% at {lambda}{approx}530 nm and of {approx}13% at {lambda}{approx}545 nm. Visible LEDs on a non-polar substrate using (11-20) {alpha}-plane bulk substrates. The absence of quantum-confined Stark effect was confirmed but further improvement in electrical and optical properties is required.

  10. Low-temperature ({<=}200 Degree-Sign C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

    SciTech Connect (OSTI)

    Samal, Nigamananda; Du Hui; Luberoff, Russell; Chetry, Krishna; Bubber, Randhir; Hayes, Alan; Devasahayam, Adrian [Veeco Instruments, 1 Terminal Drive, Plainview, New York 11803 (United States)

    2013-01-15

    Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 Degree-Sign C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for the DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H{sub 2}) as co-reactant. This process was developed in a Veeco NEXUS Trade-Mark-Sign chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4-0.5 A/cycle were achieved. Low electrical resistivity (<300 {mu}{Omega} cm), high mass density (>4 g/cm{sup 3}), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

  11. Gas Sampling | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButtePowerEdistoWhiskeyFootprintGEXA Corp. (Delaware)GalvestonWindSampling Details

  12. Gasoline Vehicle Exhuast Particle Sampling Study | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Vehicle Exhuast Particle Sampling Study Gasoline Vehicle Exhuast Particle Sampling Study 2003 DEER Conference Presentation: University of Minnesota 2003deerkittelson.pdf More...

  13. Apparatus for sectioning demountable semiconductor samples

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Scottsdale, AZ); Wolf, Abraham (Sun City West, AZ)

    1984-01-01

    Apparatus for use during polishing and sectioning operations of a ribbon sample is described. The sample holder includes a cylinder having an axially extending sample cavity terminated in a first funnel-shaped opening and a second slot-like opening. A spring-loaded pressure plunger is located adjacent the second opening of the sample cavity for frictional engagement of the sample prior to introduction of a molding medium in the sample cavity. A heat softenable molding medium is inserted in the funnel-shaped opening, to surround the sample. After polishing, the heater is energized to allow draining of the molding medium from the sample cavity. During manual polishing, the second end of the sample holder is inserted in a support ring which provides mechanical support as well as alignment of the sample holder during polishing. A gauge block for measuring the protrusion of a sample beyond the second wall of the holder is also disclosed.

  14. Manufacturing and Performance Assessment of Stamped, Laser Welded, and Nitrided FeCrV Stainless Steel Bipolar Plates for Proton Exchange Membrane Fuel Cells

    SciTech Connect (OSTI)

    Brady, Michael P; Abdelhamid, Mahmoud; Dadheech, G; Bradley, J; Toops, Todd J; Meyer III, Harry M; Tortorelli, Peter F

    2013-01-01

    A manufacturing and single-cell fuel cell performance study of stamped, laser welded, and gas nitrided ferritic stainless steel foils in an advanced automotive bipolar plate assembly design was performed. Two developmental foil compositions were studied: Fee20Cre4V and Fee23Cre4V wt.%. Foils 0.1 mm thick were stamped and then laser welded together to create single bipolar plate assemblies with cooling channels. The plates were then surface treated by pre-oxidation and nitridation in N2e4H2 based gas mixtures using either a conventional furnace or a short-cycle quartz lamp infrared heating system. Single-cell fuel cell testing was performed at 80 C for 500 h at 0.3 A/cm2 using 100% humidification and a 100%/40% humidification cycle that stresses the membrane and enhances release of the fluoride ion and promotes a more corrosive environment for the bipolar plates. Periodic high frequency resistance potential-current scans during the 500 h fuel cell test and posttest analysis of the membrane indicated no resistance increase of the plates and only trace levels of metal ion contamination.

  15. Segregation of In to dislocations in InGaN

    E-Print Network [OSTI]

    Horton, Matthew K.; Rhode, Sneha; Sahonta, Suman-Lata; Kappers, Menno J.; Haigh, Sarah J.; Pennycook, Timothy J.; Humphreys, Colin J.; Dusane, Rajiv O.; Moram, Michelle A.

    2015-01-16

    Daresbury Laboratories, Warrington, WA4 4AD, UK. 5) Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK 6) Dept. Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai, 400076, India...

  16. Core sampling system spare parts assessment

    SciTech Connect (OSTI)

    Walter, E.J.

    1995-04-04

    Soon, there will be 4 independent core sampling systems obtaining samples from the underground tanks. It is desirable that these systems be available for sampling during the next 2 years. This assessment was prepared to evaluate the adequacy of the spare parts identified for the core sampling system and to provide recommendations that may remediate overages or inadequacies of spare parts.

  17. Tank 12H residuals sample analysis report

    SciTech Connect (OSTI)

    Oji, L. N.; Shine, E. P.; Diprete, D. P.; Coleman, C. J.; Hay, M. S.

    2015-06-11

    The Savannah River National Laboratory (SRNL) was requested by Savannah River Remediation (SRR) to provide sample preparation and analysis of the Tank 12H final characterization samples to determine the residual tank inventory prior to grouting. Eleven Tank 12H floor and mound residual material samples and three cooling coil scrape samples were collected and delivered to SRNL between May and August of 2014.

  18. Synthesis of nanostructured materials in supercritical ammonia: nitrides, metals and oxides Desmoulins-Krawiec S., Aymonier C., Loppinet-Serani A., Weill F., Grosse S., Etourneau J., Cansell F.

    E-Print Network [OSTI]

    Boyer, Edmond

    . Abstract : In this study, the synthesis of nanostructured particles of nitrides (Cr2N, Co2N, Fe4N, Cu3N, Ni to copper particle synthesis in a supercritical mixture CO2­ethanol demonstrated that this process allowsN in supercritical cryogenic nitrogen by self-propagating-high- temperature synthesis (6.21 MPa, ­141 °C);19 (ii) Ga

  19. We report the synthesis of novel boronic acid-containing metal-organic frameworks (MOFs), which was synthesized via solvothermal synthesis of cobalt nitride with 3,5-Dicarboxyphenylboronic acid (3,5-

    E-Print Network [OSTI]

    We report the synthesis of novel boronic acid-containing metal-organic frameworks (MOFs), which was synthesized via solvothermal synthesis of cobalt nitride with 3,5-Dicarboxyphenylboronic acid (3,5- DCPBC to synthesize the boronic acid-containing MOFs. However, the attempts were not successful. The possible reason

  20. Sample introduction apparatus for a flow cytometer

    DOE Patents [OSTI]

    Van den Engh, Ger (Seattle, WA)

    1998-01-01

    A sample introduction system for a flow cytometer allows easy change of sample containers such as test tubes and facilitates use in high pressure environments. The sample container includes a cap having a pressure supply chamber and a sample container attachment cavity. A sample container may be automatically positioned into the attachment cavity so as to sealably engage the end of the sample container as its outer surface. This positioning may be accomplished through some sample introduction mechanism. To facilitate cleaning HPLC tubing and fittings may be used in a manner which facilitates removable of the entire tubing from both the nozzle container and other sample container cap to permit its replacement to avoid contamination. The sample container support may include horizontal stops which loosely limit the movement of the sample container and thus avoid further stresses upon it.

  1. Apparatus for sectioning demountable semiconductor samples

    DOE Patents [OSTI]

    Sopori, B.L.; Wolf, A.

    1984-01-01

    Apparatus for use during polishing and sectioning operations of a ribbon sample is described. The sample holder includes a cylinder having an axially extending sample cavity terminated in a first funnel-shaped opening and a second slot-like opening. A spring-loaded pressure plunger is located adjacent the second opening of the sample cavity for frictional engagement of the sample cavity. A heat softenable molding medium is inserted in the funnel-shaped opening, to surround the sample. After polishing, the heater is energized to allow draining of the molding medium from the sample cavity. During manual polishing, the second end of the sample holder is inserted in a support ring which provides mechanical support as well as alignment of the sample holder during polishing. A gauge block for measuring the protrusion of a sample beyond the second wall of the holder is also disclosed.

  2. Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates

    E-Print Network [OSTI]

    Gilchrist, James F.

    Member, IEEE Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering] and hydride vapor phase epitaxy [39]. Recent works [40], [41] had shown the feasibility for accessing

  3. Electrphoretic Sample Excitation Light Assembly.

    DOE Patents [OSTI]

    Li, Qingbo (State College, PA); Liu, Changsheng (State College, PA)

    2002-04-02

    An automated electrophoretic system is disclosed. The system employs a capillary cartridge having a plurality of capillary tubes. The cartridge has a first array of capillary ends projecting from one side of a plate. The first array of capillary ends are spaced apart in substantially the same manner as the wells of a microtitre tray of standard size. This allows one to simultaneously perform capillary electrophoresis on samples present in each of the wells of the tray. The system includes a stacked, dual carrousel arrangement to eliminate cross-contamination resulting from reuse of the same buffer tray on consecutive executions from electrophoresis. The system also has a gel delivery module containing a gel syringe/a stepper motor or a high pressure chamber with a pump to quickly and uniformly deliver gel through the capillary tubes. The system further includes a multi-wavelength beam generator to generate a laser beam which produces a beam with a wide range of wavelengths. An off-line capillary reconditioner thoroughly cleans a capillary cartridge to enable simultaneous execution of electrophoresis with another capillary cartridge. The streamlined nature of the off-line capillary reconditioner offers the advantage of increased system throughput with a minimal increase in system cost.

  4. Method and apparatus for data sampling

    DOE Patents [OSTI]

    Odell, Daniel M. C. (Aiken, SC)

    1994-01-01

    A method and apparatus for sampling radiation detector outputs and determining event data from the collected samples. The method uses high speed sampling of the detector output, the conversion of the samples to digital values, and the discrimination of the digital values so that digital values representing detected events are determined. The high speed sampling and digital conversion is performed by an A/D sampler that samples the detector output at a rate high enough to produce numerous digital samples for each detected event. The digital discrimination identifies those digital samples that are not representative of detected events. The sampling and discrimination also provides for temporary or permanent storage, either serially or in parallel, to a digital storage medium.

  5. Method and apparatus for data sampling

    DOE Patents [OSTI]

    Odell, D.M.C.

    1994-04-19

    A method and apparatus for sampling radiation detector outputs and determining event data from the collected samples is described. The method uses high speed sampling of the detector output, the conversion of the samples to digital values, and the discrimination of the digital values so that digital values representing detected events are determined. The high speed sampling and digital conversion is performed by an A/D sampler that samples the detector output at a rate high enough to produce numerous digital samples for each detected event. The digital discrimination identifies those digital samples that are not representative of detected events. The sampling and discrimination also provides for temporary or permanent storage, either serially or in parallel, to a digital storage medium. 6 figures.

  6. Fluid sampling system for a nuclear reactor

    DOE Patents [OSTI]

    Lau, L.K.; Alper, N.I.

    1994-11-22

    A system of extracting fluid samples, either liquid or gas, from the interior of a nuclear reactor containment utilizes a jet pump. To extract the sample fluid, a nonradioactive motive fluid is forced through the inlet and discharge ports of a jet pump located outside the containment, creating a suction that draws the sample fluid from the containment through a sample conduit connected to the pump suction port. The mixture of motive fluid and sample fluid is discharged through a return conduit to the interior of the containment. The jet pump and means for removing a portion of the sample fluid from the sample conduit can be located in a shielded sample grab station located next to the containment. A non-nuclear grade active pump can be located outside the grab sampling station and the containment to pump the nonradioactive motive fluid through the jet pump. 1 fig.

  7. Fluid sampling system for a nuclear reactor

    DOE Patents [OSTI]

    Lau, Louis K. (Monroeville, PA); Alper, Naum I. (Monroeville, PA)

    1994-01-01

    A system of extracting fluid samples, either liquid or gas, from the interior of a nuclear reactor containment utilizes a jet pump. To extract the sample fluid, a nonradioactive motive fluid is forced through the inlet and discharge ports of a jet pump located outside the containment, creating a suction that draws the sample fluid from the containment through a sample conduit connected to the pump suction port. The mixture of motive fluid and sample fluid is discharged through a return conduit to the interior of the containment. The jet pump and means for removing a portion of the sample fluid from the sample conduit can be located in a shielded sample grab station located next to the containment. A non-nuclear grade active pump can be located outside the grab sampling station and the containment to pump the nonradioactive motive fluid through the jet pump.

  8. ALARA ASSESSMENT OF SETTLER SLUDGE SAMPLING METHODS

    SciTech Connect (OSTI)

    NELSEN LA

    2009-01-30

    The purpose of this assessment is to compare underwater and above water settler sludge sampling methods to determine if the added cost for underwater sampling for the sole purpose of worker dose reductions is justified. Initial planning for sludge sampling included container, settler and knock-out-pot (KOP) sampling. Due to the significantly higher dose consequence of KOP sludge, a decision was made to sample KOP underwater to achieve worker dose reductions. Additionally, initial plans were to utilize the underwater sampling apparatus for settler sludge. Since there are no longer plans to sample KOP sludge, the decision for underwater sampling for settler sludge needs to be revisited. The present sampling plan calls for spending an estimated $2,500,000 to design and construct a new underwater sampling system (per A21 C-PL-001 RevOE). This evaluation will compare and contrast the present method of above water sampling to the underwater method that is planned by the Sludge Treatment Project (STP) and determine if settler samples can be taken using the existing sampling cart (with potentially minor modifications) while maintaining doses to workers As Low As Reasonably Achievable (ALARA) and eliminate the need for costly redesigns, testing and personnel retraining.

  9. Curve sampling and geometric conditional simulation

    E-Print Network [OSTI]

    Fan, Ayres C. (Ayres Chee), 1978-

    2008-01-01

    The main objective of this thesis is the development and exploitation of techniques to generate geometric samples for the purpose of image segmentation. A sampling-based approach provides a number of benefits over existing ...

  10. Principles for Sampling Airborne Radioactivity from Stacks

    SciTech Connect (OSTI)

    Glissmeyer, John A.

    2010-10-18

    This book chapter describes the special processes involved in sampling the airborne effluents from nuclear faciities. The title of the book is Radioactive Air Sampling Methods. The abstract for this chapter was cleared as PNNL-SA-45941.

  11. Adaptive Basis Sampling for Smoothing Splines 

    E-Print Network [OSTI]

    Zhang, Nan

    2015-08-03

    . However, the high computational cost of smoothing splines for large data sets has hindered their wide application. We develop a new method, named adaptive basis sampling, for efficient computation of smoothing splines in super-large samples. Generally, a...

  12. Fourier Sampling Coset States of Nonabelian Groups

    E-Print Network [OSTI]

    Hallgren, Sean

    55 Chapter 6 Fourier Sampling Coset States of Nonabelian Groups In this chapter we analyze the HSP problem, to the HSP over the symmetric group S n . In particular, we will analyze Fourier sampling coset states when the group is nonabelian. We show that Fourier sampling a polynomial number of coset states

  13. Growth of gallium nitride films via the innovative technique of atomic-layer epitaxy. Annual progress report, 1 June 1987-31 May 1988

    SciTech Connect (OSTI)

    Davis, R.F.; Paisley, M.J.; Sitar, Z.

    1988-06-01

    Gallium nitride (GaN) is a wide-bandgap (3.45 eV at 300K) III-V compound semiconductor. The large direct bandgap and high electron-drift velocity of GaN are important properties in the performance of short-wavelength optical devices and high-power microwave devices. Immediate applications that would be greatly enhanced by the availability of GaN and/or Al/sub x/Ga/sub 1-x/N devices include threat warning systems (based on the ultraviolet (UV) emission from the exhaust plumes of missiles) and radar systems (which require high-power microwave generation). Important future applications for devices produced from these materials include blue and ultraviolet semiconductor lasers, blue-light-emitting diodes (LEDs) and high temperature electronic devices. This report discusses this material.

  14. FNR 3410C Natural Resource Sampling FNR 3410C -NATURAL RESOURCE SAMPLING

    E-Print Network [OSTI]

    Hill, Jeffrey E.

    of sampling. Design of cost-effective sample surveys. Sampling methodology applicable 0211 (Mechanical & Aerospace Engineering) Lab 1 Period 7-9 13:55-16:55 M BLK begins with a review of elementary statistics and continues with specific

  15. Sample sizes for confidence limits for reliability.

    SciTech Connect (OSTI)

    Darby, John L.

    2010-02-01

    We recently performed an evaluation of the implications of a reduced stockpile of nuclear weapons for surveillance to support estimates of reliability. We found that one technique developed at Sandia National Laboratories (SNL) under-estimates the required sample size for systems-level testing. For a large population the discrepancy is not important, but for a small population it is important. We found that another technique used by SNL provides the correct required sample size. For systems-level testing of nuclear weapons, samples are selected without replacement, and the hypergeometric probability distribution applies. Both of the SNL techniques focus on samples without defects from sampling without replacement. We generalized the second SNL technique to cases with defects in the sample. We created a computer program in Mathematica to automate the calculation of confidence for reliability. We also evaluated sampling with replacement where the binomial probability distribution applies.

  16. Reconstruction of Intensity From Covered Samples

    SciTech Connect (OSTI)

    Barabash, Rozaliya; Watkins, Thomas R; Meisner, Roberta Ann; Burchell, Timothy D; Rosseel, Thomas M

    2015-01-01

    The safe handling of activated samples requires containment and covering the sample to eliminate any potential for contamination. Subsequent characterization of the surface with x-rays ideally necessitates a thin film. While many films appear visually transparent, they are not necessarily x-ray transparent. Each film material has a unique beam attenuation and sometimes have amorphous peaks that can superimpose with those of the sample. To reconstruct the intensity of the underlying activated sample, the x-ray attenuation and signal due to the film needs to be removed from that of the sample. This requires the calculation of unique deconvolution parameters for the film. The development of a reconstruction procedure for a contained/covered sample is described.

  17. 100 Area Columbia River sediment sampling

    SciTech Connect (OSTI)

    Weiss, S.G. [Westinghouse Hanford Co., Richland, WA (United States)

    1993-09-08

    Forty-four sediment samples were collected from 28 locations in the Hanford Reach of the Columbia River to assess the presence of metals and man-made radionuclides in the near shore and shoreline settings of the Hanford Site. Three locations were sampled upriver of the Hanford Site plutonium production reactors. Twenty-two locations were sampled near the reactors. Three locations were sampled downstream of the reactors near the Hanford Townsite. Sediment was collected from depths of 0 to 6 in. and between 12 to 24 in. below the surface. Samples containing concentrations of metals exceeding the 95 % upper threshold limit values (DOE-RL 1993b) are considered contaminated. Contamination by arsenic, chromium, copper, lead, and zinc was found. Man-made radionuclides occur in all samples except four collected opposite the Hanford Townsite. Man-made radionuclide concentrations were generally less than 1 pCi/g.

  18. Proper Oil Sampling Intervals and Sample Collection Techniques Gasoline/Diesel/Natural Gas Engines

    E-Print Network [OSTI]

    Proper Oil Sampling Intervals and Sample Collection Techniques Gasoline/Diesel/Natural Gas Engines: · Oil samples can be collected during oil changes. Follow manufacturers recommendations on frequency (hours, mileage, etc) of oil changes. · Capture a sample from the draining oil while the oil is still hot

  19. Argonne Premium Coal Sample Bank The Argonne Premium Coal (APC) Sample Bank can supply

    E-Print Network [OSTI]

    Maranas, Costas

    Argonne Premium Coal Sample Bank Background Overview T The Argonne Premium Coal (APC) Sample Bank can supply researchers with highly uniform, well-protected coal samples unexposed to oxygen. Researchers investigating coal structure, properties, and behavior can benefit greatly from these samples

  20. Hanford Sampling Quality Management Plan (HSQMP)

    SciTech Connect (OSTI)

    Hyatt, J.E.

    1995-06-01

    HSQMP establishes quality requirements in response to DOE Order 5700. 6C and to 10 Code of Federal Regulations 830.120. HSQMP is designed to meet the needs of Richland Operations Office for controlling the quality of services provided by sampling operations. It is issued through the Analytical Services Program of the Waste Programs Division. This document describes the Environmental Sampling and Analysis Program activities considered to represent the best management activities necessary to achieve a sampling program with adequate control.

  1. Sample Withdrawal Letter Ready Reference F-11

    E-Print Network [OSTI]

    Sample Withdrawal Letter Ready Reference F-11 College of Engineering, Architecture & Technology Career Services Oklahoma State University College of College of Engineering, Architecture & Technology

  2. Sample Application Letter Ready Reference F-5

    E-Print Network [OSTI]

    Sample Application Letter Ready Reference F-5 College of Engineering, Architecture & Technology Career Services Oklahoma State University College of College of Engineering, Architecture & Technology

  3. Sample Networking Letter Ready Reference F-6

    E-Print Network [OSTI]

    Sample Networking Letter Ready Reference F-6 College of Engineering, Architecture & Technology Career Services Oklahoma State University College of College of Engineering, Architecture & Technology

  4. Sample Acceptance Letter Ready Reference F-10

    E-Print Network [OSTI]

    Sample Acceptance Letter Ready Reference F-10 College of Engineering, Architecture & Technology Career Services Oklahoma State University College of College of Engineering, Architecture & Technology

  5. Hanford analytical sample projections 1996--2001

    SciTech Connect (OSTI)

    Joyce, S.M.

    1996-06-26

    This document summarizes the biannual Hanford sample projections for fiscal years 1996 to 2001. Sample projections are based on inputs submitted to Analytical Services covering Environmental Restoration, Tank Waste Remediation Systems (TWRS), Solid Waste, Liquid Effluents, Spent Nuclear Fuels, Transition Projects, Analytical Services, Site Monitoring, and Industrial Hygiene. This information will be used by Hanford Analytical Services to assure that laboratories and resources are available and effectively utilized to meet these documented needs. Sample projections are categorized by radiation level, protocol, sample matrix and Program. Analyses requirements are also presented.

  6. Colloid characterization and quantification in groundwater samples

    SciTech Connect (OSTI)

    K. Stephen Kung

    2000-06-01

    This report describes the work conducted at Los Alamos National Laboratory for studying the groundwater colloids for the Yucca Mountain Project in conjunction with the Hydrologic Resources Management Program (HRMP) and the Underground Test Area (UGTA) Project. Colloidal particle size distributions and total particle concentration in groundwater samples are quantified and characterized. Colloid materials from cavity waters collected near underground nuclear explosion sites by HRMP field sampling personnel at the Nevada Test Site (NTS) were quantified. Selected colloid samples were further characterized by electron microscope to evaluate the colloid shapes, elemental compositions, and mineral phases. The authors have evaluated the colloid size and concentration in the natural groundwater sample that was collected from the ER-20-5 well and stored in a 50-gallon (about 200-liter) barrel for several months. This groundwater sample was studied because HRMP personnel have identified trace levels of radionuclides in the water sample. Colloid results show that even though the water sample had filtered through a series of Millipore filters, high-colloid concentrations were identified in all unfiltered and filtered samples. They had studied the samples that were diluted with distilled water and found that diluted samples contained more colloids than the undiluted ones. These results imply that colloids are probably not stable during the storage conditions. Furthermore, results demonstrate that undesired colloids have been introduced into the samples during the storage, filtration, and dilution processes. They have evaluated possible sources of colloid contamination associated with sample collection, filtrating, storage, and analyses of natural groundwaters. The effects of container types and sample storage time on colloid size distribution and total concentration were studied to evaluate colloid stability by using J13 groundwater. The data suggests that groundwater samples should be analyzed for colloid size and concentration shortly after they have been collected. A prolonged waiting period after sampling will affect the colloid size distribution as well as colloid concentration resulting from the changes of water chemical properties. The data also shows that sample containers, filter materials, and labware that are used for colloid analyses should be cleaned by specially treated low-colloid-containing water. Water used for sample dilution should be verified for total colloidal particle concentration. They then analyzed freshly collected groundwater from NTS wells ER-20-5{number_sign}1 and {number_sign}3. Results show that these groundwater samples have similar colloid concentrations and particle size distributions. For the particle size range between 50- and 200-nm, about ten trillion (1E10) colloidal particles per liter are present in these water samples. Most of these colloidal particles are less than 100 mm in size. For example, more than 98% of the colloids are smaller than 100 nm in size in the ER-20-5 {number_sign}1 sample. Furthermore, it was found that the smaller the sizes of colloid, the higher the colloid concentration present in the water. For another site at NTS, Cheshire, they had analyzed two zones of groundwater samples. For water samples collected from the lower water zone (near the underground detonation cavity about 3,700 feet of slanted depth from the surface), the colloid concentration was about 5E12 particles per liter. About 20 times less than the lower zone of total colloids was found in water samples collected from the upper aquifer (around 2,511 feet of slanted depth), although colloid size distributions from these two zones appear to be rather similar.

  7. Procedures for sampling radium-contaminated soils

    SciTech Connect (OSTI)

    Fleischhauer, H.L.

    1985-10-01

    Two procedures for sampling the surface layer (0 to 15 centimeters) of radium-contaminated soil are recommended for use in remedial action projects. Both procedures adhere to the philosophy that soil samples should have constant geometry and constant volume in order to ensure uniformity. In the first procedure, a ''cookie cutter'' fashioned from pipe or steel plate, is driven to the desired depth by means of a slide hammer, and the sample extracted as a core or plug. The second procedure requires use of a template to outline the sampling area, from which the sample is obtained using a trowel or spoon. Sampling to the desired depth must then be performed incrementally. Selection of one procedure over the other is governed primarily by soil conditions, the cookie cutter being effective in nongravelly soils, and the template procedure appropriate for use in both gravelly and nongravelly soils. In any event, a minimum sample volume of 1000 cubic centimeters is recommended. The step-by-step procedures are accompanied by a description of the minimum requirements for sample documentation. Transport of the soil samples from the field is then addressed in a discussion of the federal regulations for shipping radioactive materials. Interpretation of those regulations, particularly in light of their application to remedial action soil-sampling programs, is provided in the form of guidance and suggested procedures. Due to the complex nature of the regulations, however, there is no guarantee that our interpretations of them are complete or entirely accurate. Preparation of soil samples for radium-226 analysis by means of gamma-ray spectroscopy is described.

  8. GraFix: sample preparation for single-

    E-Print Network [OSTI]

    Cai, Long

    (cryo-EM). GraFix uses a glycerol gradient centrifugation step in which the complexes are centrifuged a structurally and compositionally homogeneous sample; this in turn requires advanced tools for sample handling are dissolved during centrifugation because of the pressure acting on the molecules. Chemical fixation reagents

  9. Stochastic Sampling for Internet Traffic Measurement

    E-Print Network [OSTI]

    Rejaie, Reza

    is to sample or aggregate information. For example, to estimate link utilization, the size of all packets Gong Department of Electrical and Computer Engineering University of Massachusetts, Amherst, MA, USA data from different sources with independent clocks and sampling rates. We present results that show

  10. EML Surface Air Sampling Program, 1989 data

    SciTech Connect (OSTI)

    Larsen, R.J.; Sanderson, C.G.

    1991-08-01

    Measurements of the concentrations of specific atmospheric radionuclides in air filter samples collected for the Environmental Measurements Laboratory`s Surface Air Sampling Program (SASP) during 1989 indicate that anthropogenic radionuclides, in both hemispheres, were at or below the lower limits of detection for the analytical and sampling techniques that were used to measure them. During 1989, the occasional detection of {sup 137}Cs in some air filter samples may have resulted from resuspension of previously deposited debris. The naturally occurring radioisotopes that we measure, {sup 7}Be and {sup 210}Pb, continue to be detected in most air filter samples. The 1989 annual mean concentrations of {sup 7}Be at many of the sites were lower than those previously reported during the last decade. Possible changes in the atmospheric production of {sup 7}Be, variations in atmospheric circulation and precipitation patterns, as well as modifications to our sampling procedure many all have contributed to this observed trend. Short-term variations in the concentrations of {sup 7}Be and {sup 210}Pb continued to be observed at many sites at which weekly air filter samples were analyzed. These short-term fluctuations probably resulted from variations in meteorological factors. The data from our quality control samples indicate that the reliability of the air filter measurements are acceptable for their intended application.

  11. EML Surface Air Sampling Program, 1989 data

    SciTech Connect (OSTI)

    Larsen, R.J.; Sanderson, C.G.

    1991-08-01

    Measurements of the concentrations of specific atmospheric radionuclides in air filter samples collected for the Environmental Measurements Laboratory's Surface Air Sampling Program (SASP) during 1989 indicate that anthropogenic radionuclides, in both hemispheres, were at or below the lower limits of detection for the analytical and sampling techniques that were used to measure them. During 1989, the occasional detection of {sup 137}Cs in some air filter samples may have resulted from resuspension of previously deposited debris. The naturally occurring radioisotopes that we measure, {sup 7}Be and {sup 210}Pb, continue to be detected in most air filter samples. The 1989 annual mean concentrations of {sup 7}Be at many of the sites were lower than those previously reported during the last decade. Possible changes in the atmospheric production of {sup 7}Be, variations in atmospheric circulation and precipitation patterns, as well as modifications to our sampling procedure many all have contributed to this observed trend. Short-term variations in the concentrations of {sup 7}Be and {sup 210}Pb continued to be observed at many sites at which weekly air filter samples were analyzed. These short-term fluctuations probably resulted from variations in meteorological factors. The data from our quality control samples indicate that the reliability of the air filter measurements are acceptable for their intended application.

  12. Disc valve for sampling erosive process streams

    DOE Patents [OSTI]

    Mrochek, J.E.; Dinsmore, S.R.; Chandler, E.W.

    1984-08-16

    This is a patent for a disc-type, four-port sampling valve for service with erosive high temperature process streams. Inserts and liners of ..cap alpha..-silicon carbide respectively, in the faceplates and in the sampling cavities, limit erosion while providing lubricity for a smooth and precise operation. 1 fig.

  13. Accurate Direct Illumination Using Iterative Adaptive Sampling

    E-Print Network [OSTI]

    Bala, Kavita

    Accurate Direct Illumination Using Iterative Adaptive Sampling Michael Donikian, Bruce Walter with many lights and complex occlusion. Images are first divided into 8 Â 8 pixel blocks and for each point to be shaded within a block, a probability density function (PDF) is constructed over the lights and sampled

  14. Sampling Techniques for Probabilistic Roadmap Planners

    E-Print Network [OSTI]

    Utrecht, Universiteit

    Sampling Techniques for Probabilistic Roadmap Planners Roland Geraerts Mark H. Overmars institute;Sampling Techniques for Probabilistic Roadmap Planners Roland Geraerts Mark H. Overmars Institute,markov}@cs.uu.nl. Abstract The probabilistic roadmap approach is a commonly used motion planning technique. A crucial

  15. Sampling Techniques for Probabilistic Roadmap Planners

    E-Print Network [OSTI]

    Utrecht, Universiteit

    Sampling Techniques for Probabilistic Roadmap Planners Roland Geraerts Mark H. Overmars institute; Sampling Techniques for Probabilistic Roadmap Planners Roland Geraerts Mark H. Overmars Institute,markov}@cs.uu.nl. Abstract The probabilistic roadmap approach is a commonly used motion planning technique. A crucial

  16. SAMPLE PROGRAM (First Math Course MATH 198)

    E-Print Network [OSTI]

    Gering, Jon C.

    MATH SAMPLE PROGRAM (First Math Course MATH 198) This sample program suggests one way to navigate equivalent patterns are possible. Fall ­ Semester 1 Spring ­ Semester 2 MATH 198: Analytic Geometry with Calculus I MATH 263: Analytic Geometry with Calculus II MATH 101: Freshman Seminar CS 170: Intro

  17. Atmospheric sampling glow discharge ionization source

    DOE Patents [OSTI]

    McLuckey, S.A.; Glish, G.L.

    1989-07-18

    An atmospheric sampling glow discharge ionization source that can be used in combination with an analytical instrument which operates at high vacuum, such as a mass spectrometer. The atmospheric sampling glow discharge ionization source comprises a chamber with at least one pair of electrodes disposed therein, an inlet for a gaseous sample to be analyzed and an outlet communicating with an analyzer which operates at subatmospheric pressure. The ionization chamber is maintained at a pressure below atmospheric pressure, and a voltage difference is applied across the electrodes to induce a glow discharge between the electrodes, so that molecules passing through the inlet are ionized by the glow discharge and directed into the analyzer. The ionization source accepts the sample under atmospheric pressure conditions and processes it directly into the high vacuum instrument, bridging the pressure gap and drawing off unwanted atmospheric gases. The invention also includes a method for analyzing a gaseous sample using the glow discharge ionization source described above. 3 figs.

  18. Empirical comparison of network sampling techniques

    E-Print Network [OSTI]

    Blagus, Neli; Bahec, Marko

    2015-01-01

    In the past few years, the storage and analysis of large-scale and fast evolving networks present a great challenge. Therefore, a number of different techniques have been proposed for sampling large networks. In general, network exploration techniques approximate the original networks more accurately than random node and link selection. Yet, link selection with additional subgraph induction step outperforms most other techniques. In this paper, we apply subgraph induction also to random walk and forest-fire sampling. We analyze different real-world networks and the changes of their properties introduced by sampling. We compare several sampling techniques based on the match between the original networks and their sampled variants. The results reveal that the techniques with subgraph induction underestimate the degree and clustering distribution, while overestimate average degree and density of the original networks. Techniques without subgraph induction step exhibit exactly the opposite behavior. Hence, the pe...

  19. Microfluidic Tools for Biological Sample Preparation

    SciTech Connect (OSTI)

    Visuri, S R; Ness, K; Dzenitis, J; Benett, B; Bettencourt, K; Hamilton, J; Fisher, K; Krulevitch, P

    2002-04-10

    Researchers at Lawrence Livermore National Laboratory are developing means to collect and identify fluid-based biological pathogens in the forms of proteins, viruses, and bacteria. To support detection instruments, we are developing a flexible fluidic sample preparation unit. The overall goal of this Microfluidic Module is to input a fluid sample, containing background particulates and potentially target compounds, and deliver a processed sample for detection. We are developing techniques for sample purification, mixing, and filtration that would be useful to many applications including immunologic and nucleic acid assays. Sample preparation functions are accomplished with acoustic radiation pressure, dielectrophoresis, and solid phase extraction. We are integrating these technologies into packaged systems with pumps and valves to control fluid flow and investigating small-scale detection methods.

  20. CHARACTERIZATION OF TANK 19F SAMPLES

    SciTech Connect (OSTI)

    Oji, L.; Diprete, D.; Click, D.

    2009-12-17

    The Savannah River National Laboratory (SRNL) was asked by Liquid Waste Operations to characterize Tank 19F closure samples. Tank 19F slurry samples analyzed included the liquid and solid fractions derived from the slurry materials along with the floor scrape bottom Tank 19F wet solids. These samples were taken from Tank 19F in April 2009 and made available to SRNL in the same month. Because of limited amounts of solids observed in Tank 19F samples, the samples from the north quadrants of the tank were combined into one Tank 19F North Hemisphere sample and similarly the south quadrant samples were combined into one Tank 19F South Hemisphere sample. These samples were delivered to the SRNL shielded cell. The Tank 19F samples were analyzed for radiological, chemical and elemental components. Where analytical methods yielded additional contaminants other than those requested by the customer, these results were also reported. The target detection limits for isotopes analyzed were based on detection values of 1E-04 {micro}Ci/g for most radionuclides and customer desired detection values of 1E-05 {micro}Ci/g for I-129, Pa-231, Np-237, and Ra-226. While many of the target detection limits, as specified in the technical task request and task technical and quality assurance plans were met for the species characterized for Tank 19F, some were not met. In a number of cases, the relatively high levels of radioactive species of the same element or a chemically similar element precluded the ability to measure some isotopes to low levels. SRNL, in conjunction with the plant customer, reviewed all these cases and determined that the impacts were negligible.

  1. CHARACTERIZATION OF THE TANK 18F SAMPLES

    SciTech Connect (OSTI)

    Oji, L.; Click, D.; Diprete, D.

    2009-12-17

    The Savannah River National Laboratory (SRNL) was asked by Liquid Waste Operations to characterize Tank 18F closure samples. Tank 18F slurry samples analyzed included the liquid and solid fractions derived from the 'as-received' slurry materials along with the floor scrape bottom Tank 18F wet solids. These samples were taken from Tank 18F in March 2009 and made available to SRNL in the same month. Because of limited amounts of solids observed in Tank 18F samples, the samples from the north quadrants of the tank were combined into one North Tank 18F Hemisphere sample and similarly the south quadrant samples were combined into one South Tank 18F Hemisphere sample. These samples were delivered to the SRNL shielded cell. The Tank 18F samples were analyzed for radiological, chemical and elemental components. Where analytical methods yielded additional contaminants other than those requested by the customer, these results were also reported. The target detection limits for isotopes analyzed were 1E-04 {micro}Ci/g for most radionuclides and customer desired detection values of 1E-05 {micro}Ci/g for I-129, Pa-231, Np-237, and Ra-226. While many of the minimum detection limits, as specified in the technical task request and task technical and quality assurance plans were met for the species characterized for Tank 18F, some were not met due to spectral interferences. In a number of cases, the relatively high levels of radioactive species of the same element or a chemically similar element precluded the ability to measure some isotopes to low levels. SRNL, in conjunction with the plant customer, reviewed all these cases and determined that the impacts were negligible.

  2. Instructions for Apple Leaf Sample Collection.doc September 2013 Instructions for Apple Leaf Sample Collection Vermont

    E-Print Network [OSTI]

    Hayden, Nancy J.

    Instructions for Apple Leaf Sample Collection.doc September 2013 Instructions for Apple Leaf Sample;Instructions for Apple Leaf Sample Collection.doc September 2013 Washing Leaf Samples 1. Wash the leaf samples

  3. Automated collection and processing of environmental samples

    DOE Patents [OSTI]

    Troyer, Gary L. (Richland, WA); McNeece, Susan G. (Richland, WA); Brayton, Darryl D. (Richland, WA); Panesar, Amardip K. (Kennewick, WA)

    1997-01-01

    For monitoring an environmental parameter such as the level of nuclear radiation, at distributed sites, bar coded sample collectors are deployed and their codes are read using a portable data entry unit that also records the time of deployment. The time and collector identity are cross referenced in memory in the portable unit. Similarly, when later recovering the collector for testing, the code is again read and the time of collection is stored as indexed to the sample collector, or to a further bar code, for example as provided on a container for the sample. The identity of the operator can also be encoded and stored. After deploying and/or recovering the sample collectors, the data is transmitted to a base processor. The samples are tested, preferably using a test unit coupled to the base processor, and again the time is recorded. The base processor computes the level of radiation at the site during exposure of the sample collector, using the detected radiation level of the sample, the delay between recovery and testing, the duration of exposure and the half life of the isotopes collected. In one embodiment, an identity code and a site code are optically read by an image grabber coupled to the portable data entry unit.

  4. The RGB Sample of Intermediate BL Lacs

    E-Print Network [OSTI]

    S. A. Laurent-Muehleisen; R. I. Kollgaard; E. D. Feigelson; W. Brinkmann; J. Siebert

    1999-05-12

    Combining newly identified and previously known BL Lacs from the RASS-Green Bank (RGB) catalog, we present a sample of 127 BL Lacs, the largest ever derived from a single uniform survey. A Complete sample of 33 objects brighter than O=18.0 mag is also presented. These samples are compared to other known BL Lac samples and are generally found to exhibit properties intermediate between those of the previously disparate classes of High and Low energy peaked BL Lacs (HBLs and LBLs, respectively). This result is most dramatic in the distribution of the X-ray to radio logarithmic flux ratios, where the RGB BL Lacs are shown to peak precisely where the sharp dichotomy between the two subclasses was previously seen. The alpha_ro vs alpha_ox diagram also shows the RGB sample smoothly bridges the gap between the previously distinct subclasses of LBLs and HBLs. We also find a weak, but statistically significant correlation between the composite X-ray spectral index alpha_xox and alpha_ro. This implies that the more LBL-like RGB BL Lacs have a secondary source of X-ray emission, possibly from an inverse Compton component. We also present both the X-ray and radio logN-logS distributions for which the competing HBL/LBL unification scenarios have differing predictions. The unknown effects of the triple flux limit inherent in the RGB Complete sample makes quantitative analysis uncertain, but the characteristics of the RGB sample compare well both with results obtained from previous samples and with general theoretical predictions based on a simple Monte Carlo simulation. Our analysis indicates that the unimodal distribution of BL Lac properties found in the RGB sample likely reliably reflect the underlying population, while the bimodal distribution found in earlier studies arose primarily from observational selection effects.

  5. Evaluating Radionuclide Air Emission Stack Sampling Systems

    SciTech Connect (OSTI)

    Ballinger, Marcel Y.

    2002-12-16

    The Pacific Northwest National Laboratory (PNNL) operates a number of research and development (R&D) facilities for the U.S. Department of Energy at the Hanford Site, Washington. These facilities are subject to Clean Air Act regulations that require sampling of radionuclide air emissions from some of these facilities. A revision to an American National Standards Institute (ANSI) standard on sampling radioactive air emissions has recently been incorporated into federal and state regulations and a re-evaluation of affected facilities is being performed to determine the impact. The revised standard requires a well-mixed sampling location that must be demonstrated through tests specified in the standard. It also carries a number of maintenance requirements, including inspections and cleaning of the sampling system. Evaluations were performed in 2000 – 2002 on two PNNL facilities to determine the operational and design impacts of the new requirements. The evaluation included inspection and cleaning maintenance activities plus testing to determine if the current sampling locations meet criteria in the revised standard. Results show a wide range of complexity in inspection and cleaning activities depending on accessibility of the system, ease of removal, and potential impact on building operations (need for outages). As expected, these High Efficiency Particulate Air (HEPA)-filtered systems did not show deposition significant enough to cause concerns with blocking of the nozzle or other parts of the system. The tests for sampling system location in the revised standard also varied in complexity depending on accessibility of the sample site and use of a scale model can alleviate many issues. Previous criteria to locate sampling systems at eight duct diameters downstream and two duct diameters upstream of the nearest disturbances is no guarantee of meeting criteria in the revised standard. A computational fluid dynamics model was helpful in understanding flow and contaminant mixing in an exhaust system and may be useful to identify potential sampling locations in an exhaust system that are likely to meet criteria in the revised standard.

  6. Visual Sample Plan (VSP) - FIELDS Integration

    SciTech Connect (OSTI)

    Pulsipher, Brent A.; Wilson, John E.; Gilbert, Richard O.; Hassig, Nancy L.; Carlson, Deborah K.; Bing-Canar, John; Cooper, Brian; Roth, Chuck

    2003-04-19

    Two software packages, VSP 2.1 and FIELDS 3.5, are being used by environmental scientists to plan the number and type of samples required to meet project objectives, display those samples on maps, query a database of past sample results, produce spatial models of the data, and analyze the data in order to arrive at defensible decisions. VSP 2.0 is an interactive tool to calculate optimal sample size and optimal sample location based on user goals, risk tolerance, and variability in the environment and in lab methods. FIELDS 3.0 is a set of tools to explore the sample results in a variety of ways to make defensible decisions with quantified levels of risk and uncertainty. However, FIELDS 3.0 has a small sample design module. VSP 2.0, on the other hand, has over 20 sampling goals, allowing the user to input site-specific assumptions such as non-normality of sample results, separate variability between field and laboratory measurements, make two-sample comparisons, perform confidence interval estimation, use sequential search sampling methods, and much more. Over 1,000 copies of VSP are in use today. FIELDS is used in nine of the ten U.S. EPA regions, by state regulatory agencies, and most recently by several international countries. Both software packages have been peer-reviewed, enjoy broad usage, and have been accepted by regulatory agencies as well as site project managers as key tools to help collect data and make environmental cleanup decisions. Recently, the two software packages were integrated, allowing the user to take advantage of the many design options of VSP, and the analysis and modeling options of FIELDS. The transition between the two is simple for the user – VSP can be called from within FIELDS, automatically passing a map to VSP and automatically retrieving sample locations and design information when the user returns to FIELDS. This paper will describe the integration, give a demonstration of the integrated package, and give users download instructions and software requirements for running the integrated package.

  7. Gas sampling system for a mass spectrometer

    DOE Patents [OSTI]

    2003-12-30

    The present invention relates generally to a gas sampling system, and specifically to a gas sampling system for transporting a hazardous process gas to a remotely located mass spectrometer. The gas sampling system includes a capillary tube having a predetermined capillary length and capillary diameter in communication with the supply of process gas and the mass spectrometer, a flexible tube surrounding and coaxial with the capillary tube intermediate the supply of process gas and the mass spectrometer, a heat transfer tube surrounding and coaxial with the capillary tube, and a heating device in communication the heat transfer tube for substantially preventing condensation of the process gas within the capillary tube.

  8. Disc valve for sampling erosive process streams

    DOE Patents [OSTI]

    Mrochek, J.E.; Dinsmore, S.R.; Chandler, E.W.

    1986-01-07

    A four-port disc valve is described for sampling erosive, high temperature process streams. A rotatable disc defining opposed first and second sampling cavities rotates between fired faceplates defining flow passageways positioned to be alternatively in axial alignment with the first and second cavities. Silicon carbide inserts and liners composed of [alpha] silicon carbide are provided in the faceplates and in the sampling cavities to limit erosion while providing lubricity for a smooth and precise operation when used under harsh process conditions. 1 fig.

  9. Vapor port and groundwater sampling well

    DOE Patents [OSTI]

    Hubbell, J.M.; Wylie, A.H.

    1996-01-09

    A method and apparatus have been developed for combining groundwater monitoring wells with unsaturated-zone vapor sampling ports. The apparatus allows concurrent monitoring of both the unsaturated and the saturated zone from the same well at contaminated areas. The innovative well design allows for concurrent sampling of groundwater and volatile organic compounds (VOCs) in the vadose (unsaturated) zone from a single well, saving considerable time and money. The sample tubes are banded to the outer well casing during installation of the well casing. 10 figs.

  10. Vapor port and groundwater sampling well

    DOE Patents [OSTI]

    Hubbell, Joel M. (Idaho Falls, ID); Wylie, Allan H. (Idaho Falls, ID)

    1996-01-01

    A method and apparatus has been developed for combining groundwater monitoring wells with unsaturated-zone vapor sampling ports. The apparatus allows concurrent monitoring of both the unsaturated and the saturated zone from the same well at contaminated areas. The innovative well design allows for concurrent sampling of groundwater and volatile organic compounds (VOCs) in the vadose (unsaturated) zone from a single well, saving considerable time and money. The sample tubes are banded to the outer well casing during installation of the well casing.

  11. Spectroscopic diagnostics for bacteria in biologic sample

    DOE Patents [OSTI]

    El-Sayed, Mostafa A. (Atlanta, GA); El-Sayed, Ivan H. (Somerville, MA)

    2002-01-01

    A method to analyze and diagnose specific bacteria in a biologic sample using spectroscopy is disclosed. The method includes obtaining the spectra of a biologic sample of a non-infected patient for use as a reference, subtracting the reference from the spectra of an infected sample, and comparing the fingerprint regions of the resulting differential spectrum with reference spectra of bacteria in saline. Using this diagnostic technique, specific bacteria can be identified sooner and without culturing, bacteria-specific antibiotics can be prescribed sooner, resulting in decreased likelihood of antibiotic resistance and an overall reduction of medical costs.

  12. Sample results from the interim salt disposition program macrobatch 9 tank 21H qualification samples

    SciTech Connect (OSTI)

    Peters, T. B.

    2015-11-01

    Savannah River National Laboratory (SRNL) analyzed samples from Tank 21H in support of qualification of Macrobatch (Salt Batch) 9 for the Interim Salt Disposition Program (ISDP). This document reports characterization data on the samples of Tank 21H.

  13. Sampling and analysis plan for canister liquid and gas sampling at 105 KW fuel storage basin

    SciTech Connect (OSTI)

    Trimble, D.J.

    1996-08-09

    This Sampling and Analysis Plan describes the equipment,procedures and techniques for obtaining gas and liquid samples from sealed K West fuel canisters. The analytical procedures and quality assurance requirements for the subsequent laboratory analysis of the samples are also discussed.

  14. Generalized Sampling-Based Feedback Motion Planners 

    E-Print Network [OSTI]

    Kumar, Sandip

    2012-02-14

    states. In the deterministic robotics motion planning community, sampling based algorithms like probabilistic roadmaps (PRM) and rapidly exploring random trees (RRTs) have been successful in solving very high dimensional deterministic problem. However...

  15. Interdisciplinary Mathematics/Statistics Actuarial Science Sample ...

    E-Print Network [OSTI]

    Interdisciplinary Mathematics/Statistics Actuarial Science Sample Plan 2 . 1 MA 161 (4-5) MA/S T 170 ENGL 101 Lab Science Language or 165, 173, 181, 271 ...

  16. Gibbs Sampling and Centroids for Gene Regulation

    E-Print Network [OSTI]

    Newberg, Heidi

    of bioethanol and biohydrogen production" (CEL, LAM, LAN) E #12;Lee A. Newberg 11/30/2011 Gibbs sampling ... for the understanding of cell function, differentiation, and pathology ... because the elements affect both the products

  17. Metrics for sampling-based motion planning 

    E-Print Network [OSTI]

    Morales Aguirre, Marco Antonio

    2009-05-15

    A motion planner finds a sequence of potential motions for a robot to transit from an initial to a goal state. To deal with the intractability of this problem, a class of methods known as sampling-based planners build ...

  18. LIGHT EMITTING DIODE CHARACTERISTICS (SAMPLE LAB WRITEUP)

    E-Print Network [OSTI]

    McNeill, John A.

    1 LIGHT EMITTING DIODE CHARACTERISTICS (SAMPLE LAB WRITEUP) John A. McNeill ECE Box 000 January 19, 1997 ABSTRACT This lab investigates the V-I characteristic of a light-emitting diode (LED

  19. Experimental analysis of municipal solid waste samples 

    E-Print Network [OSTI]

    Mendoza Sanchez, Itza

    2002-01-01

    In the analysis of municipal solid waste consolidation, large-scale devices are usually used to measure the compression and hydraulic conductivity parameters. The use of those devices is justified due to difficulties in probing undisturbed samples...

  20. WRAP Module 1 sampling and analysis plan

    SciTech Connect (OSTI)

    Mayancsik, B.A.

    1995-03-24

    This document provides the methodology to sample, screen, and analyze waste generated, processed, or otherwise the responsibility of the Waste Receiving and Processing Module 1 facility. This includes Low-Level Waste, Transuranic Waste, Mixed Waste, and Dangerous Waste.

  1. Surface sampling concentration and reaction probe

    DOE Patents [OSTI]

    Van Berkel, Gary J; Elnaggar, Mariam S

    2013-07-16

    A method of analyzing a chemical composition of a specimen is described. The method can include providing a probe comprising an outer capillary tube and an inner capillary tube disposed co-axially within the outer capillary tube, where the inner and outer capillary tubes define a solvent capillary and a sampling capillary in fluid communication with one another at a distal end of the probe; contacting a target site on a surface of a specimen with a solvent in fluid communication with the probe; maintaining a plug volume proximate a solvent-specimen interface, wherein the plug volume is in fluid communication with the probe; draining plug sampling fluid from the plug volume through the sampling capillary; and analyzing a chemical composition of the plug sampling fluid with an analytical instrument. A system for performing the method is also described.

  2. On sampling fractions and electron shower shapes

    SciTech Connect (OSTI)

    Peryshkin, Alexander; Raja, Rajendran; /Fermilab

    2011-12-01

    We study the usage of various definitions of sampling fractions in understanding electron shower shapes in a sampling multilayer electromagnetic calorimeter. We show that the sampling fractions obtained by the conventional definition (I) of (average observed energy in layer)/(average deposited energy in layer) will not give the best energy resolution for the calorimeter. The reason for this is shown to be the presence of layer by layer correlations in an electromagnetic shower. The best resolution is obtained by minimizing the deviation from the total input energy using a least squares algorithm. The 'sampling fractions' obtained by this method (II) are shown to give the best resolution for overall energy. We further show that the method (II) sampling fractions are obtained by summing the columns of a non-local {lambda} tensor that incorporates the correlations. We establish that the sampling fractions (II) cannot be used to predict the layer by layer energies and that one needs to employ the full {lambda} tensor for this purpose. This effect is again a result of the correlations.

  3. Rapid determination of actinides in asphalt samples

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Maxwell, Sherrod L.; Culligan, Brian K.; Hutchison, Jay B.

    2014-01-12

    A new rapid method for the determination of actinides in asphalt samples has been developed that can be used in emergency response situations or for routine analysis If a radiological dispersive device (RDD), Improvised Nuclear Device (IND) or a nuclear accident such as the accident at the Fukushima Nuclear Power Plant in March, 2011 occurs, there will be an urgent need for rapid analyses of many different environmental matrices, including asphalt materials, to support dose mitigation and environmental clean up. The new method for the determination of actinides in asphalt utilizes a rapid furnace step to destroy bitumen and organicsmore »present in the asphalt and sodium hydroxide fusion to digest the remaining sample. Sample preconcentration steps are used to collect the actinides and a new stacked TRU Resin + DGA Resin column method is employed to separate the actinide isotopes in the asphalt samples. The TRU Resin plus DGA Resin separation approach, which allows sequential separation of plutonium, uranium, americium and curium isotopes in asphalt samples, can be applied to soil samples as well.« less

  4. Rapid determination of actinides in asphalt samples

    SciTech Connect (OSTI)

    Maxwell, Sherrod L.; Culligan, Brian K.; Hutchison, Jay B.

    2014-01-12

    A new rapid method for the determination of actinides in asphalt samples has been developed that can be used in emergency response situations or for routine analysis If a radiological dispersive device (RDD), Improvised Nuclear Device (IND) or a nuclear accident such as the accident at the Fukushima Nuclear Power Plant in March, 2011 occurs, there will be an urgent need for rapid analyses of many different environmental matrices, including asphalt materials, to support dose mitigation and environmental clean up. The new method for the determination of actinides in asphalt utilizes a rapid furnace step to destroy bitumen and organics present in the asphalt and sodium hydroxide fusion to digest the remaining sample. Sample preconcentration steps are used to collect the actinides and a new stacked TRU Resin + DGA Resin column method is employed to separate the actinide isotopes in the asphalt samples. The TRU Resin plus DGA Resin separation approach, which allows sequential separation of plutonium, uranium, americium and curium isotopes in asphalt samples, can be applied to soil samples as well.

  5. Rapid determination of actinides in seawater samples

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Maxwell, Sherrod L.; Culligan, Brian K.; Hutchison, Jay B.; Utsey, Robin C.; McAlister, Daniel R.

    2014-03-09

    A new rapid method for the determination of actinides in seawater samples has been developed at the Savannah River National Laboratory. The actinides can be measured by alpha spectrometry or inductively-coupled plasma mass spectrometry. The new method employs novel pre-concentration steps to collect the actinide isotopes quickly from 80 L or more of seawater. Actinides are co-precipitated using an iron hydroxide co-precipitation step enhanced with Ti+3 reductant, followed by lanthanum fluoride co-precipitation. Stacked TEVA Resin and TRU Resin cartridges are used to rapidly separate Pu, U, and Np isotopes from seawater samples. TEVA Resin and DGA Resin were used tomore »separate and measure Pu, Am and Cm isotopes in seawater volumes up to 80 L. This robust method is ideal for emergency seawater samples following a radiological incident. It can also be used, however, for the routine analysis of seawater samples for oceanographic studies to enhance efficiency and productivity. In contrast, many current methods to determine actinides in seawater can take 1–2 weeks and provide chemical yields of ~30–60 %. This new sample preparation method can be performed in 4–8 h with tracer yields of ~85–95 %. By employing a rapid, robust sample preparation method with high chemical yields, less seawater is needed to achieve lower or comparable detection limits for actinide isotopes with less time and effort.« less

  6. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

    SciTech Connect (OSTI)

    Verma, Jai Islam, S. M.; Protasenko, Vladimir; Kumar Kandaswamy, Prem; Xing, Huili; Jena, Debdeep

    2014-01-13

    Efficient semiconductor optical emitters in the deep-ultraviolet spectral window are encountering some of the most deep rooted problems of semiconductor physics. In III-Nitride heterostructures, obtaining short-wavelength photon emission requires the use of wide bandgap high Al composition AlGaN active regions. High conductivity electron (n-) and hole (p-) injection layers of even higher bandgaps are necessary for electrical carrier injection. This approach requires the activation of very deep dopants in very wide bandgap semiconductors, which is a difficult task. In this work, an approach is proposed and experimentally demonstrated to counter the challenges. The active region of the heterostructure light emitting diode uses ultrasmall epitaxially grown GaN quantum dots. Remarkably, the optical emission energy from GaN is pushed from 365?nm (3.4?eV, the bulk bandgap) to below 240?nm (>5.2?eV) because of extreme quantum confinement in the dots. This is possible because of the peculiar bandstructure and band alignments in the GaN/AlN system. This active region design crucially enables two further innovations for efficient carrier injection: Tunnel injection of carriers and polarization-induced p-type doping. The combination of these three advances results in major boosts in electroluminescence in deep-ultraviolet light emitting diodes and lays the groundwork for electrically pumped short-wavelength lasers.

  7. Engineering the electronic bandgaps and band edge positions in carbon-substituted 2D boron nitride: a first-principles investigation

    E-Print Network [OSTI]

    Shirodkar, Sharmila N; Fisher, Timothy S; Grau-Crespo, Ricardo

    2015-01-01

    Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys of graphene and boron nitride (BN), we consider here engineering the electronic structure and bandgap of C$_{2x}$B$_{1-x}$N$_{1-x}$ alloys via both compositional and configurational modification. We start from the BN end-member, which already has a large bandgap, and then show that (a) the bandgap can in principle be reduced to about 2 eV with moderate substitution of C $(x<0.25)$; and (b) the electronic structure of C$_{2x}$B$_{1-x}$N$_{1-x}$ can be further tuned not only with composition $x$, but also with the configuration adopted by C substituents in the BN matrix. Our analysis, based on accurate screened hybrid functional calculations, provides a clear understanding of the correlation found between the bandgap and the level of aggregation of C atoms: the bandgap dec...

  8. An analysis of van der Waals density functional components: Binding and corrugation of benzene and C60 on boron nitride and graphene

    E-Print Network [OSTI]

    Berland, Kristian

    2013-01-01

    The adsorption of benzene and C60 on graphene and boron nitride (BN) is studied using density functional theory with the non-local correlation functional vdW-DF. By comparing these systems we can systematically investigate their adsorption nature and differences between the two functional versions vdW-DF1 and vdW-DF2. The bigger size of the C60 molecule makes it bind stronger to the surface than benzene, yet the interface between the molecules and the sheets are similar in nature. The binding separation is more sensitive to the exchange variant used in vdW-DF than to the correlation version. This result is related to the exchange and correlation components of the potential energy curve (PEC). We show that a moderate dipole forms for C60 on graphene, unlike for the other adsorption systems. We find that the corrugation is very sensitive to the variant or version of vdW-DF used, in particular the exchange. Further, we show that this sensitivity arise indirectly through the shift in binding separation caused by ...

  9. Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications. Final report

    SciTech Connect (OSTI)

    Kang, S.; Selverian, J.H.; O`Neil, D.; Kim, H. [GTE Labs., Inc., Waltham, MA (US); Kim, K. [Brown Univ., Providence, RI (US). Div. of Engineering

    1993-05-01

    This report summarizes the results of Phase 2 of Analytical and Experimental Evaluation of Joining Silicon Nitride to Metal and Silicon Carbide to Metal for Advanced Heat Engine Applications. A general methodology was developed to optimize the joint geometry and material systems for 650{degrees}C applications. Failure criteria were derived to predict the fracture of the braze and ceramic. Extensive finite element analyses (FEA) were performed to examine various joint geometries and to evaluate the affect of different interlayers on the residual stress state. Also, material systems composed of coating materials, interlayers, and braze alloys were developed for the program based on the chemical stability and strength of the joints during processing, and service. The FEA results were compared with experiments using two methods: (1) an idealized strength relationship of the ceramic, and (2) a probabilistic analysis of the ceramic strength (NASA CARES). The results showed that the measured strength of the joint reached 30--80% of the strength predicted by FEA. Also, potential high-temperature braze alloys were developed and evaluated for the high-temperature application of ceramic-metal joints. 38 tabs, 29 figs, 20 refs.

  10. Optical properties of bulk semiconductors and graphene/boron-nitride: The Bethe-Salpeter equation with derivative discontinuity-corrected DFT energies

    E-Print Network [OSTI]

    Yan, Jun; Thygesen, Kristian S; 10.1103/PhysRevB.86.045208

    2012-01-01

    We present an efficient implementation of the Bethe-Salpeter equation (BSE) for optical properties of materials in the projector augmented wave method GPAW. Single-particle energies and wave functions are obtained from the GLLBSC functional which explicitly includes the derivative discontinuity, is computationally inexpensive, and yields excellent fundamental gaps. Electron-hole interactions are included through the BSE using the statically screened interaction evaluated in the random phase approximation. For a representative set of semiconductors and insulators we find excellent agreement with experiments for the dielectric functions, onset of absorption, and lowest excitonic features. For the two-dimensional systems of graphene and hexagonal boron-nitride (h-BN) we find good agreement with previous many-body calculations. For the graphene/h-BN interface, we find that the fundamental and optical gaps of the h-BN layer are reduced by 2.0 eV and 0.7 eV, respectively, compared to freestanding h-BN. This reducti...

  11. Vapor and gas sampling of Single-Shell Tank 241-A-101 using the Vapor Sampling System

    SciTech Connect (OSTI)

    Caprio, G.S.

    1995-11-01

    This document presents sampling data resulting from the June 8, 1995, sampling of SST 241-A-101 using the Vapor Sampling System.

  12. Germanium-76 Sample Analysis: Revision 3

    SciTech Connect (OSTI)

    Kouzes, Richard T.; Zhu, Zihua; Engelhard, Mark H.

    2011-09-19

    The MAJORANA DEMONSTRATOR is a large array of ultra-low background high-purity germanium detectors, enriched in 76Ge, designed to search for zero-neutrino double-beta decay (0{nu}{beta}{beta}). The DEMONSTRATOR will utilize 76Ge from Russia. The first one-gram sample was received from the supplier for analysis on April 24, 2011. The second one-gram sample was received from the supplier for analysis on July 12, 2011. The third sample, which came from the first large shipment of germanium from the vendor, was received from Oak Ridge National Laboratory (ORNL) on September 13, 2011. The Environmental Molecular Sciences facility, a DOE user facility at PNNL, was used to make the required isotopic and chemical purity measurements that are essential to the quality assurance for the MAJORANA DEMONSTRATOR. The results of these analyses are reported here. The isotopic composition of a sample of natural germanium was also measured twice. Differences in the result between these two measurements led to a re-measurement of the second 76Ge sample.

  13. Practical reporting times for environmental samples

    SciTech Connect (OSTI)

    Bayne, C.K.; Schmoyer, D.D.; Jenkins, R.A.

    1993-02-01

    Preanalytical holding times for environmental samples are specified because chemical and physical characteristics may change between sampling and chemical analysis. For example, the Federal Register prescribes a preanalytical holding time of 14 days for volatile organic compounds in soil stored at 4{degrees}C. The American Society for Testing Materials (ASTM) uses a more technical definition that the preanalytical holding time is the day when the analyte concentration for an environmental sample falls below the lower 99% confidence interval on the analyte concentration at day zero. This study reviews various holding time definitions and suggest a new preanalytical holding time approach using acceptable error rates for measuring an environmental analyte. This practical reporting time (PRT) approach has been applied to nineteen volatile organic compounds and four explosives in three environmental soil samples. A PRT nomograph of error rates has been developed to estimate the consequences of missing a preanalytical holding time. This nomograph can be applied to a large class of analytes with concentrations that decay linearly or exponentially with time regardless of sample matrices and storage conditions.

  14. Analytical instrument with apparatus for sample concentrating

    DOE Patents [OSTI]

    Zaromb, Solomon (Hinsdale, IL)

    1989-01-01

    A system for analysis of trace concentrations of contaminants in air includes a portable liquid chromatograph and a preconcentrator for the contaminants to be analyzed. The preconcentrator includes a sample bag having an inlet valve and an outlet valve for collecting an air sample. When the sample is collected the sample bag is connected in series with a sorbing apparatus in a recirculation loop. The sorbing apparatus has an inner gas-permeable container containing a sorbent material and an outer gas-impermeable container. The sample is circulated through the outer container and around the inner container for trapping and preconcentrating the contaminants in the sorbent material. The sorbent material may be a liquid having the same composition as the mobile phase of the chromatograph for direct injection thereinto. Alternatively, the sorbent material may be a porous, solid body, to which mobile phase liquid is added after preconcentration of the contaminants for dissolving the contaminants, the liquid solution then being withdrawn for injection into the chromatograph.

  15. DWPF SMECT PVV SAMPLE CHARACTERIZATION AND REMEDIATION

    SciTech Connect (OSTI)

    Bannochie, C.; Crawford, C.

    2013-06-18

    On April 2, 2013, a solid sample of material collected from the Defense Waste Processing Facility’s Process Vessel Vent (PVV) jumper for the Slurry Mix Evaporator Condensate Tank (SMECT) was received at the Savannah River National Laboratory (SRNL). DWPF has experienced pressure spikes within the SMECT and other process vessels which have resulted in processing delays while a vacuum was re-established. Work on this sample was requested in a Technical Assistance Request (TAR). This document reports the results of chemical and physical property measurements made on the sample, as well as insights into the possible impact to the material using DWPF’s proposed remediation methods. DWPF was interested in what the facility could expect when the material was exposed to either 8M nitric acid or 90% formic acid, the two materials they have the ability to flush through the PVV line in addition to process water once the line is capped off during a facility outage.

  16. Sample collection system for gel electrophoresis

    DOE Patents [OSTI]

    Olivares, Jose A.; Stark, Peter C.; Dunbar, John M.; Hill, Karen K.; Kuske, Cheryl R.; Roybal, Gustavo

    2004-09-21

    An automatic sample collection system for use with an electrophoretic slab gel system is presented. The collection system can be used with a slab gel have one or more lanes. A detector is used to detect particle bands on the slab gel within a detection zone. Such detectors may use a laser to excite fluorescently labeled particles. The fluorescent light emitted from the excited particles is transmitted to low-level light detection electronics. Upon the detection of a particle of interest within the detection zone, a syringe pump is activated, sending a stream of buffer solution across the lane of the slab gel. The buffer solution collects the sample of interest and carries it through a collection port into a sample collection vial.

  17. Standard guide for sampling radioactive tank waste

    E-Print Network [OSTI]

    American Society for Testing and Materials. Philadelphia

    2011-01-01

    1.1 This guide addresses techniques used to obtain grab samples from tanks containing high-level radioactive waste created during the reprocessing of spent nuclear fuels. Guidance on selecting appropriate sampling devices for waste covered by the Resource Conservation and Recovery Act (RCRA) is also provided by the United States Environmental Protection Agency (EPA) (1). Vapor sampling of the head-space is not included in this guide because it does not significantly affect slurry retrieval, pipeline transport, plugging, or mixing. 1.2 The values stated in inch-pound units are to be regarded as standard. No other units of measurement are included in this standard. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

  18. RAPID DETERMINATION OF RADIOSTRONTIUM IN SEAWATER SAMPLES

    SciTech Connect (OSTI)

    Maxwell, S.

    2013-01-16

    A new method for the determination of radiostrontium in seawater samples has been developed at the Savannah River National Laboratory (SRNL) that allows rapid preconcentration and separation of strontium and yttrium isotopes in seawater samples for measurement. The new SRNL method employs a novel and effective pre-concentration step that utilizes a blend of calcium phosphate with iron hydroxide to collect both strontium and yttrium rapidly from the seawater matrix with enhanced chemical yields. The pre-concentration steps, in combination with rapid Sr Resin and DGA Resin cartridge separation options using vacuum box technology, allow seawater samples up to 10 liters to be analyzed. The total {sup 89}Sr + {sup 90}Sr activity may be determined by gas flow proportional counting and recounted after ingrowth of {sup 90}Y to differentiate {sup 89}Sr from {sup 90}Sr. Gas flow proportional counting provides a lower method detection limit than liquid scintillation or Cerenkov counting and allows simultaneous counting of samples. Simultaneous counting allows for longer count times and lower method detection limits without handling very large aliquots of seawater. Seawater samples up to 6 liters may be analyzed using Sr Resin for {sup 89}Sr and {sup 90}Sr with a Minimum Detectable Activity (MDA) of 1-10 mBq/L, depending on count times. Seawater samples up to 10 liters may be analyzed for {sup 90}Sr using a DGA Resin method via collection and purification of {sup 90}Y only. If {sup 89}Sr and other fission products are present, then {sup 91}Y (beta energy 1.55 MeV, 58.5 day half-life) is also likely to be present. {sup 91}Y interferes with attempts to collect {sup 90}Y directly from the seawater sample without initial purification of Sr isotopes first and {sup 90}Y ingrowth. The DGA Resin option can be used to determine {sup 90}Sr, and if {sup 91}Y is also present, an ingrowth option with using DGA Resin again to collect {sup 90}Y can be performed. An MDA for {sup 90}Sr of <1 mBq/L for an 8 hour count may be obtained using 10 liter seawater sample aliquots.

  19. Performance evaluation soil samples utilizing encapsulation technology

    DOE Patents [OSTI]

    Dahlgran, James R. (Idaho Falls, ID)

    1999-01-01

    Performance evaluation soil samples and method of their preparation using encapsulation technology to encapsulate analytes which are introduced into a soil matrix for analysis and evaluation by analytical laboratories. Target analytes are mixed in an appropriate solvent at predetermined concentrations. The mixture is emulsified in a solution of polymeric film forming material. The emulsified solution is polymerized to form microcapsules. The microcapsules are recovered, quantitated and introduced into a soil matrix in a predetermined ratio to form soil samples with the desired analyte concentration.

  20. Performance evaluation soil samples utilizing encapsulation technology

    DOE Patents [OSTI]

    Dahlgran, J.R.

    1999-08-17

    Performance evaluation soil samples and method of their preparation uses encapsulation technology to encapsulate analytes which are introduced into a soil matrix for analysis and evaluation by analytical laboratories. Target analytes are mixed in an appropriate solvent at predetermined concentrations. The mixture is emulsified in a solution of polymeric film forming material. The emulsified solution is polymerized to form microcapsules. The microcapsules are recovered, quantitated and introduced into a soil matrix in a predetermined ratio to form soil samples with the desired analyte concentration. 1 fig.

  1. Analytical laboratory and mobile sampling platform

    SciTech Connect (OSTI)

    Stetzenbach, K.; Smiecinski, A.

    1996-04-30

    This is the final report for the Analytical Laboratory and Mobile Sampling Platform project. This report contains only major findings and conclusions resulting from this project. Detailed reports of all activities performed for this project were provided to the Project Office every quarter since the beginning of the project. This report contains water chemistry data for samples collected in the Nevada section of Death Valley National Park (Triangle Area Springs), Nevada Test Site springs, Pahranagat Valley springs, Nevada Test Site wells, Spring Mountain springs and Crater Flat and Amargosa Valley wells.

  2. Computed microtomography of reservoir core samples

    SciTech Connect (OSTI)

    Coles, M.E.; Muegge, E.L.; Spanne, P.; Jones, K.W.

    1995-03-01

    X-ray computed tomography (CT) is often utilized to evaluate and characterize structural characteristics within reservoir core material systems. Generally, medical CT scanners have been employed because of their availability and ease of use. Of interest lately has been the acquisition of three-dimensional, high resolution descriptions of rock and pore structures for characterization of the porous media and for modeling of single and multiphase transport processes. The spatial resolution of current medical CT scanners is too coarse for pore level imaging of most core samples. Recently developed high resolution computed microtomography (CMT) using synchrotron X-ray sources is analogous to conventional medical CT scanning and provides the ability to obtain three-dimensional images of specimens with a spatial resolution on the order of micrometers. Application of this technique to the study of core samples provides two- and three-dimensional high resolution description of pore structure and mineral distributions. Pore space and interconnectivity is accurately characterized and visualized. Computed microtomography data can serve as input into pore-level simulation techniques. A generalized explanation of the technique is provided, with comparison to conventional CT scanning techniques and results. Computed microtomographic results of several sandstone samples are presented and discussed. Bulk porosity values and mineralogical identification were obtained from the microtomograms and compared with gas porosity and scanning electron microscope results on tandem samples.

  3. Efficient Bayesian sampling inspection for industrial processes

    E-Print Network [OSTI]

    Little, John

    Efficient Bayesian sampling inspection for industrial processes based on transformed spatio of complex industrial systems subject to degradation effects, such as corrosion, is important for safety, inspection, Bayesian, minima. 1 #12;1 Introduction Many large industrial systems including pipes, vessels

  4. Sampling the National Deep Web Denis Shestakov

    E-Print Network [OSTI]

    Hammerton, James

    Sampling the National Deep Web Denis Shestakov Department of Media Technology, Aalto University pages filled with information from myriads of online databases. This part of the Web, known as the deep a problem of deep Web characterization: how to estimate the total number of online databases on the Web? We

  5. PSYC 465: Poverty and Development Sample Syllabus

    E-Print Network [OSTI]

    Hopfinger, Joseph B.

    PSYC 465: Poverty and Development Sample Syllabus Description: Poverty is one of the most examines the impact of poverty and family economic hardship on human development. An ecological systems on the scientific study of poverty as an important developmental risk factor as well as on research on protective

  6. Analysis of large soil samples for actinides

    DOE Patents [OSTI]

    Maxwell, III; Sherrod L. (Aiken, SC)

    2009-03-24

    A method of analyzing relatively large soil samples for actinides by employing a separation process that includes cerium fluoride precipitation for removing the soil matrix and precipitates plutonium, americium, and curium with cerium and hydrofluoric acid followed by separating these actinides using chromatography cartridges.

  7. Lunar Sample Compendium C Meyer 2011

    E-Print Network [OSTI]

    Rathbun, Julie A.

    . of water for up to 10 hrs. after the CM was retrieved (Butler 1973, pages 38 and 39). The outer bag Sci. Conf. 1975-2003. Butler P. (1973) Lunar Sample Information Catalog Apollo 17. Lunar Receiving Laboratory. MSC 03211 Curator's Catalog. pp. 447. Heiken G.H. (1974) A catalog of lunar soils. JSC Curator

  8. Lunar Sample Compendium C Meyer 2010

    E-Print Network [OSTI]

    Rathbun, Julie A.

    2672 grams Mineralogical Mode of 15058 Sample catalog Rhodes and Juan et Butler 1971 Hubbard 1973 al basalts returned from the moon, but its lunar orientation is not known with much certainty. The catalog are fluorapatite with minor chloroapatite and trace water (~2400 ± 1100 ppm H2 O). Chemistry O'Kelley et al. (1972

  9. Using Slocum Gliders for Coordinated Spatial Sampling

    E-Print Network [OSTI]

    Kremer, Ulrich

    in the per sample energy cost. I. INTRODUCTION Buoyancy driven Autonomous Underwater Vehicles (AUVs) allow of vehicles. Although functional, alternative approaches should be explored. This paper proposes and evaluates--Buoyancy driven Autonomous Underwater Vehicles (AUVs), such as the Slocum glider, allow for a prolonged presence

  10. Sample & Assay Technologies Ni-NTA Superflow

    E-Print Network [OSTI]

    Lebendiker, Mario

    March 2007 Sample & Assay Technologies Ni-NTA Superflow Cartridge Handbook For manual or FPLCTM purification of His-tagged proteins #12;2 Ni-NTA Superflow Cartridge Handbook 03/2007 Trademarks: QIAGEN, are not to be considered unprotected by law. © 2007 QIAGEN, all rights reserved. #12;Ni-NTA Superflow Cartridge Handbook 03

  11. Sample Job Offer Letter Best Company, Inc.

    E-Print Network [OSTI]

    Awtar, Shorya

    Sample Job Offer Letter Best Company, Inc. 1553 Job Street, Ann Arbor, MI 48105 (Tel) (734) 000 would like to offer (student's name here) an internship position. Below is the information you requested: 1553 Job Street, Ann Arbor, MI 48105 Number of hours worked per week: 40 Official offer beginning

  12. Hanford site transuranic waste sampling plan

    SciTech Connect (OSTI)

    GREAGER, T.M.

    1999-05-13

    This sampling plan (SP) describes the selection of containers for sampling of homogeneous solids and soil/gravel and for visual examination of transuranic and mixed transuranic (collectively referred to as TRU) waste generated at the U.S. Department of Energy (DOE) Hanford Site. The activities described in this SP will be conducted under the Hanford Site TRU Waste Certification Program. This SP is designed to meet the requirements of the Transuranic Waste Characterization Quality Assurance Program Plan (CAO-94-1010) (DOE 1996a) (QAPP), site-specific implementation of which is described in the Hanford Site Transuranic Waste Characterization Program Quality Assurance Project Plan (HNF-2599) (Hanford 1998b) (QAPP). The QAPP defines the quality assurance (QA) requirements and protocols for TRU waste characterization activities at the Hanford Site. In addition, the QAPP identifies responsible organizations, describes required program activities, outlines sampling and analysis strategies, and identifies procedures for characterization activities. The QAPP identifies specific requirements for TRU waste sampling plans. Table 1-1 presents these requirements and indicates sections in this SP where these requirements are addressed.

  13. Hanford Sampling Quality Management Plan (HSQMP)

    SciTech Connect (OSTI)

    Hyatt, J.E.

    1995-04-28

    This document provides a management tool for evaluating and designing the appropriate elements of a field sampling program. This document provides discussion of the elements of a program and is to be used as a guidance document during the preparation of project and/or function specific documentation. This document does not specify how a sampling program shall be organized. The HSQMP is to be used as a companion document to the Hanford Analytical Services Quality Assurance Plan (HASQAP) DOE/RL-94-55. The generation of this document was enhanced by conducting baseline evaluations of current sampling organizations. Valuable input was received from members of field and Quality Assurance organizations. The HSQMP is expected to be a living document. Revisions will be made as regulations and or Hanford Site conditions warrant changes in the best management practices. Appendices included are: summary of the sampling and analysis work flow process, a user`s guide to the Data Quality Objective process, and a self-assessment checklist.

  14. OVERVIEW OF BERYLLIUM SAMPLING AND ANALYSIS

    SciTech Connect (OSTI)

    Brisson, M

    2009-04-01

    Because of its unique properties as a lightweight metal with high tensile strength, beryllium is widely used in applications including cell phones, golf clubs, aerospace, and nuclear weapons. Beryllium is also encountered in industries such as aluminium manufacturing, and in environmental remediation projects. Workplace exposure to beryllium particulates is a growing concern, as exposure to minute quantities of anthropogenic forms of beryllium may lead to sensitization and to chronic beryllium disease, which can be fatal and for which no cure is currently known. Furthermore, there is no known exposure-response relationship with which to establish a 'safe' maximum level of beryllium exposure. As a result, the current trend is toward ever lower occupational exposure limits, which in turn make exposure assessment, both in terms of sampling and analysis, more challenging. The problems are exacerbated by difficulties in sample preparation for refractory forms of beryllium, such as beryllium oxide, and by indications that some beryllium forms may be more toxic than others. This chapter provides an overview of sources and uses of beryllium, health risks, and occupational exposure limits. It also provides a general overview of sampling, analysis, and data evaluation issues that will be explored in greater depth in the remaining chapters. The goal of this book is to provide a comprehensive resource to aid personnel in a wide variety of disciplines in selecting sampling and analysis methods that will facilitate informed decision-making in workplace and environmental settings.

  15. Bachelor of Arts in Geography: Sample Curriculum

    E-Print Network [OSTI]

    Rock, Chris

    Bachelor of Arts in Geography: Sample Curriculum FIRST YEAR Fall Spring GEOG 1401, Physical Geography 4 GEOG 2300, Intro to Human Geography 3 POLS 1301, American Govt. Org. 3 POLS 2302, American Geog. 3 GEOG 4300, Seminar in Geography 3 Minor 3 Minor (Jr./Sr. ) 6 Junior/Senior Elective 6 TOTAL 15

  16. MA265 Linear Algebra — Sample Exam 1

    E-Print Network [OSTI]

    page 1. Purdue University. MA265 Linear Algebra — Sample Exam 1. Date: February 20, 2015 Duration: 50 ... 1. Determine A such that (let-(A). 7 .110 [p. 1100 O r. In. )1 A n 1. \\\\\\\\l_ he zlxrs M. \\11. '01 .... Rep'mr'ata. 1 F'ncl '3“ m muVVnN

  17. Sonochemical Digestion of Soil and Sediment Samples

    SciTech Connect (OSTI)

    Sinkov, Sergei I.; Lumetta, Gregg J.

    2006-10-12

    This work was performed as part of a broader effort to automate analytical methods for determination of plutonium and other radioisotopes in environmental samples. The work described here represented a screening study to determine the potential for applying ultrasonic irradiation to sample digestion. Two standard reference materials (SRMs) were used in this study: Columbia River Sediment and Rocky Flats Soil. The key experiments performed are listed below along with a summary of the results. The action of nitric acid, regardless of its concentration and liquid-to-solid ratio, did not achieve dissolution efficiency better that 20%. The major fraction of natural organic matter (NOM) remained undissolved by this treatment. Sonication did not result in improved dissolution for the SRMs tested. The action of hydrofluoric acid at concentrations of 8 M and higher achieved much more pronounced dissolution (up to 97% dissolved for the Rocky Flats soil sample and up to 78% dissolved for the Columbia River Sediment sample). Dissolution efficiency remains constant for solid-to-liquid ratios of up to 0.05 to 1 and decreases for the higher loadings of the solid phase. Sonication produced no measurable effect in improving the dissolution of the samples compared with the control digestion experiments. Combined treatment of the SRM by mixtures of HNO3 and HF showed inferior performance compared with the HF alone. An adverse effect of sonication was found for the Rocky Flats soil material, which became more noticeable at higher HF concentrations. Sonication of the Columbia River sediment samples had no positive effect in the mixed acid treatment. The results indicate that applying ultrasound in an isolated cup horn configuration does not offer any advantage over conventional ''heat and mix'' treatment for dissolution of the soil and sediment based on the SRM examined here. This conclusion, however, is based on an approach that uses gravimetric analysis to determine gross dissolution efficiency. This approach does not allow any conclusion regarding the possible advantage of sonication in selective dissolution of plutonium traces incorporated into an inorganic or organic fraction of the samples.

  18. Iron-Nitride-Based Magnets: Synthesis and Phase Stabilization of Body Center Tetragonal (BCT) Metastable Fe-N Anisotropic Nanocomposite Magnet- A Path to Fabricate Rare Earth Free Magnet

    SciTech Connect (OSTI)

    None

    2012-01-01

    REACT Project: The University of Minnesota will develop an early stage prototype of an iron-nitride permanent magnet material for EVs and renewable power generators. This new material, comprised entirely of low-cost and abundant resources, has the potential to demonstrate the highest energy potential of any magnet to date. This project will provide the basis for an entirely new class of rare-earth-free magnets capable of generating power without costly and scarce rare earth materials. The ultimate goal of this project is to demonstrate a prototype with magnetic properties exceeding state-of-the-art commercial magnets.

  19. Sample Results from the Interim Salt Disposition Program Macrobatch 6 Tank 21H Qualification Samples

    SciTech Connect (OSTI)

    Peters, T. B.; Fink, S. D.

    2012-12-11

    Savannah River National Laboratory (SRNL) analyzed samples from Tank 21H in support of qualification of Macrobatch (Salt Batch) 6 for the Interim Salt Disposition Project (ISDP). This document reports partial results of the analyses of samples of Tank 21H. No issues with the projected Salt Batch 6 strategy are identified.

  20. Sample Results From The Interim Salt Disposition Program Macrobatch 6 Tank 21H Qualification Samples

    SciTech Connect (OSTI)

    Peters, T. B.; Fink, S. D.

    2012-12-20

    Savannah River National Laboratory (SRNL) analyzed samples from Tank 21H in support of qualification of Macrobatch (Salt Batch) 6 for the Interim Salt Disposition Project (ISDP). This document reports partial results of the analyses of samples of Tank 21H. No issues with the projected Salt Batch 6 strategy are identified.