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We encourage you to perform a real-time search of NLEBeta
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1

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network [OSTI]

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs颅GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

2

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

0.00-1.99 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1996 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1996 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: In 1996, consumption of natural gas for agricultural use

3

SPECTROSCOPIC INVESTIGATION OF (NH4)2S TREATED GaSeTe FOR RADIATION DETECTOR APPLICATIONS  

SciTech Connect (OSTI)

The surface of the layered III-VI chalcogenide semiconductor GaSeTe was treated with (NH{sub 4}){sub 2}S at 60 C to modify the surface chemistry and determine the effect on transport properties. Room temperature photoluminescence (PL) measurements were used to assess the effect of the (NH{sub 4}){sub 2}S treatment on surface defect states. Evaluation of the subsequent surface chemistry was performed with high-resolution core-level photoemission measurements. Metal overlayers were deposited on the (NH{sub 4}){sub 2}S treated surfaces and the I-V characteristics were measured. The measurements were correlated to understand the effect of (NH{sub 4}){sub 2}S modification of the interfacial electronic structure with the goal of optimizing the metal/GaSeTe interface for radiation detector devices.

Nelson, A; Laurence, T; Conway, A; Behymer, E; Sturm, B; Voss, L; Nikolic, R; Payne, S; Mertiri, A; Pabst, G; Mandal, K; Burger, A

2009-08-04T23:59:59.000Z

4

Kinetics of GaAs Dissolution in H2O2?NH4OH?H2O Solutions  

Science Journals Connector (OSTI)

Gallium arsenide and other group III?V semiconductors have found numerous applications in the electronics industry because of such characteristics as the direct band gap and higher electron mobility, which make them more suitable than silicon in the fabrication of optoelectronic and high-frequency devices. ... For example, the solubilities of both As2O3 and As2O5 in water increase between 15 and 40 癈 (Perry and Phillips, 1995), while Ga2O3 and Ga(OH)3 are insoluble in water and no data are available on the temperature dependence of their solubility at higher pH. ... Both Sheka et al. (1966) and Sidgwick (1950) confirm that gallium hydroxides are particularly soluble in NH4OH. ...

Christine Bryce; Dimitrios Berk

1996-12-04T23:59:59.000Z

5

Frequency stabilization of 1. 5-. mu. m InGaAsP distributed feedback laser to NH/sub 3/ absorption lines  

SciTech Connect (OSTI)

NH/sub 3/ absorption lines due to vibration-rotation transitions are observed at 1.50--1.54 ..mu..m by using an InGaAsP superluminescent diode. A 1.5-..mu..m InGaAsP distributed feedback (DFB) laser is frequency stabilized to an NH/sub 3/ linear absorption line at 15196 A. Frequency stability of sigma(2,tau) = 8 x 10/sup -11/tau/sup -1/ is achieved for an averaging time range of 10 ms< or =tau< or =1 s. Such an absolute frequency-stabilized DFB laser is useful for coherent optical system applications, since it is free from the longitudinal mode jumping which results from a wide range of temperature changes and long-term device degradation.

Yanagawa, T.; Saito, S.; Yamamoto, Y.

1984-10-15T23:59:59.000Z

6

Frequency stabilization of an InGaAsP distributed feedback laser to an NH/sub 3/ absorption line at 15137 A with an external frequency modulator  

SciTech Connect (OSTI)

The oscillation frequency of a 1.5-..mu..m InGaAsP distributed feedback laser is stabilized to an NH/sub 3/ linear absorption line at 15137 A. A LiNbO/sub 3/ external frequency modulator is used instead of direct frequency modulation of the laser to extract error signals. An effective bandwidth of 100 kHz for the feedback loop is obtained through this external modulation scheme. Frequency stability of sigma(2,tau) = 4 x 10/sup -11/ is achieved for an averaging time of 1 s< or =tau< or =100 s.

Yanagawa, T.; Saito, S.; Machida, S.; Yamamoto, Y.; Noguchi, Y.

1985-11-15T23:59:59.000Z

7

PMC路I'Fl.  

Broader source: Energy.gov (indexed) [DOE]

I'Fl. I'Fl. 1)路路1.0) , u.s. DEPARTUENT OF ENERGY EERE PROJECT M ANAGEMENT CENTER NEPA DETERl\IINATION RECIPIENT:Escambia County PROJECT TITLE: Landfill Gas Extraction and Control System Expansion and Modernization Page I of2 STATE: FL Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA-0000013 DE-EE0000784 0 Based on my review of the information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 451.1A), I have made the following determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling). document preparation (such as conceptual design or feasibility studies, analytical energy supply

8

Category:Tampa, FL | Open Energy Information  

Open Energy Info (EERE)

Tampa, FL" Tampa, FL" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Tampa FL Florida Power & Light Co..png SVFullServiceRestauran... 77 KB SVHospital Tampa FL Florida Power & Light Co..png SVHospital Tampa FL Fl... 80 KB SVLargeHotel Tampa FL Florida Power & Light Co..png SVLargeHotel Tampa FL ... 77 KB SVLargeOffice Tampa FL Florida Power & Light Co..png SVLargeOffice Tampa FL... 76 KB SVMediumOffice Tampa FL Florida Power & Light Co..png SVMediumOffice Tampa F... 78 KB SVMidriseApartment Tampa FL Florida Power & Light Co..png SVMidriseApartment Tam... 78 KB SVOutPatient Tampa FL Florida Power & Light Co..png SVOutPatient Tampa FL ... 77 KB SVPrimarySchool Tampa FL Florida Power & Light Co..png SVPrimarySchool Tampa ...

9

Category:Miami, FL | Open Energy Information  

Open Energy Info (EERE)

Miami, FL" Miami, FL" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Miami FL Florida Power & Light Co..png SVFullServiceRestauran... 77 KB SVHospital Miami FL Florida Power & Light Co..png SVHospital Miami FL Fl... 80 KB SVLargeHotel Miami FL Florida Power & Light Co..png SVLargeHotel Miami FL ... 78 KB SVLargeOffice Miami FL Florida Power & Light Co..png SVLargeOffice Miami FL... 76 KB SVMediumOffice Miami FL Florida Power & Light Co..png SVMediumOffice Miami F... 79 KB SVMidriseApartment Miami FL Florida Power & Light Co..png SVMidriseApartment Mia... 78 KB SVOutPatient Miami FL Florida Power & Light Co..png SVOutPatient Miami FL ... 77 KB SVPrimarySchool Miami FL Florida Power & Light Co..png SVPrimarySchool Miami ...

10

FL J. Smith, Jr.  

Office of Legacy Management (LM)

ct. B. Duillap ct. B. Duillap (THPJJs L. Kassel) FL J. Smith, Jr. c c Kelley from R. 1. Cook, Kslley from R. 1. Cook, J J cit cit In accordawe with Secret memorandum dated October , 1951 ta IA. E. In accordawe with Secret rwmorandnn dated October , 1951 ta IA. E. Qapletad Uranium for HAA and ML," we are Ylepletad Uranium for HAA and ML," we are obligated to fill the following orders obligated to fill the following orders North American Aviation North American Aviation . . One Inch roes One Inch roes a. Depleted U nrptalj U-235 content= 0.&9 f O.O& Meterial must be homogenemsj uniformity of assay, O&Q5%. : b. Diemeterc 0.99P (1( O.ooOn, - 0.003")j de-hrmd. YI E ,g C* pwh b" f1/32" Classification Cancelled d. Humber of rods: 1800

11

RECIPIENT:Lake County, FL  

Broader source: Energy.gov (indexed) [DOE]

Lake County, FL Lake County, FL u.s. DEPARTIIIEN T OF ENERGY EERE PROJECT MANAGEMENT CEN T ER NEPA DETERlIJJNATION PROJECf TITLE: Lake County, FL EECBG SOW (S) Page lof2 STATE: FL Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Numbcr CID Numbtr OE路FOA-OOOOO13 DE路EE00Q0786.001 0 Based on my review of the information concerning the proposed adion, as NEPA Compliance Officer (authorized undtr DOE Order 451.IA), I have made the following determination: ex. EA, EIS APPENDIX AND NUMBER: Description: 65.1 Actions to conserve energy, demonstrate potential energy conserva tion, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical

12

DOE - Office of Legacy Management -- Gardinier Inc - FL 05  

Office of Legacy Management (LM)

Gardinier Inc - FL 05 Gardinier Inc - FL 05 FUSRAP Considered Sites Site: GARDINIER, INC. ( FL.05 ) Eliminated from consideration under FUSRAP - Referred to EPA and State of Florida Designated Name: Not Designated Alternate Name: U. S. Phosphoric Products FL.05-1 Location: Tampa , Florida FL.05-2 Evaluation Year: 1984 FL.05-3 Site Operations: U. S. Phosphoric Products constructed and operated a small scale pilot plant for uranium recovery; and Gardinier investigated a process for the recovery of by-product uranium from wet process phosphoric acid. FL.05-1 FL.05-6 FL.05-7 Site Disposition: Eliminated - No Authority FL.05-3 FL.05-8 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium FL.05-6 FL.05-7 Radiological Survey(s): Yes FL.05-2

13

St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids...

14

DOE - Office of Legacy Management -- University of Florida - FL 09  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Florida - FL 09 Florida - FL 09 FUSRAP Considered Sites Site: UNIVERSITY OF FLORIDA (FL.09) Eliminated from consideration under FUSRAP - Referred to NRC Designated Name: Not Designated Alternate Name: None Location: Gainesville , Florida FL.09-1 Evaluation Year: 1995 FL.09-1 Site Operations: Research and development using test quantities of radioactive metal. FL.09-2 Site Disposition: Eliminated - No Authority - NRC licensed FL.09-1 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Test Quantities of Uranium and Plutonium FL.09-2 Radiological Survey(s): None Indicated Site Status: Eliminated from consideration under FUSRAP - Referred to NRC FL.09-2 Also see Documents Related to UNIVERSITY OF FLORIDA FL.09-1 - DOE Letter; Wagoner to DeLaney; Subject: University of

15

DOE - Office of Legacy Management -- Humphreys Gold Co - FL 08  

Office of Legacy Management (LM)

Humphreys Gold Co - FL 08 Humphreys Gold Co - FL 08 FUSRAP Considered Sites Site: Humphreys Gold Co. (FL.08 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Jacksonville , Florida FL.08-1 Evaluation Year: 1987 FL.08-2 FL.08-3 Site Operations: Processed monazite ore in the 1950s. FL.08-3 Site Disposition: Eliminated - No Authority - No AEC involvement at the site FL.08-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Thorium FL.08-1 Radiological Survey(s): No Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to Humphreys Gold Co. FL.08-1 - AEC Memorandum; Edmonds to McCarvill; Subject: Monazite Dredging Operations and Placer Deposits Containing Thorium Minerals; June

16

Fl YO Co -op E athea lectric  

E-Print Network [OSTI]

are based on a false premise that the cost and usage pattern for energy in the Pacific Northwest should and Energy Efficiency The High Level indicator of "Regional Electricity Use per Person vs. US Average" shouldFl YO Co -op E athea lectric Community...Integrity...Reliability 2510 U.S. Highway 2 East

17

Rapid Ammonia Gas Transport Accounts for Futile Transmembrane Cycling under NH3/NH4  

E-Print Network [OSTI]

Rapid Ammonia Gas Transport Accounts for Futile Transmembrane Cycling under NH3/NH4 + Toxicity) seedlings is predominately of the gaseous NH3 species, rather than the NH4 + ion. Influx of 13 NH3/13 NH4 + , which exceeded 200 mmol g颅1 h颅1 , was not commensurate with membrane depolarization or increases in root

Britto, Dev T.

18

Category:Concord, NH | Open Energy Information  

Open Energy Info (EERE)

Go Back to PV Economics By Location Go Back to PV Economics By Location Media in category "Concord, NH" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Concord NH Public Service Co of NH.png SVFullServiceRestauran... 74 KB SVHospital Concord NH Public Service Co of NH.png SVHospital Concord NH ... 75 KB SVLargeHotel Concord NH Public Service Co of NH.png SVLargeHotel Concord N... 74 KB SVLargeOffice Concord NH Public Service Co of NH.png SVLargeOffice Concord ... 76 KB SVMediumOffice Concord NH Public Service Co of NH.png SVMediumOffice Concord... 74 KB SVMidriseApartment Concord NH Public Service Co of NH.png SVMidriseApartment Con... 71 KB SVOutPatient Concord NH Public Service Co of NH.png SVOutPatient Concord N... 72 KB SVPrimarySchool Concord NH Public Service Co of NH.png

19

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

WWNA Monthly; Largo, FL WWNA Monthly; Largo, FL 7031-226 Accutest Job Number: F36361 Sampling Date: 11/03/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

20

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

Quarterly Sampling, STAR Center, Largo, FL Quarterly Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F33211 Sampling Dates: 07/13/05 - 07/14/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

Quarterly Sampling, STAR Center, Largo, FL Quarterly Sampling, STAR Center, Largo, FL 7030-226 Accutest Job Number: F27229 Sampling Date: 10/07/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

22

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

WWNA Monthly; Largo, FL WWNA Monthly; Largo, FL 110406202 Accutest Job Number: F25982 Sampling Date: 08/10/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

23

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

WWNA Monthly; Largo, FL WWNA Monthly; Largo, FL 7030-226 Accutest Job Number: F33038 Sampling Date: 07/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

24

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

2/04 2/04 Technical Report for S M Stoller Quarterly Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F25409 Sampling Dates: 07/13/04 - 07/14/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

25

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

0/06 0/06 Technical Report for S M Stoller Quarterly Sampling, STAR Center, Largo, FL 110406202 Accutest Job Number: F39137 Sampling Dates: 03/08/06 - 03/09/06 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

26

FUPWG Meeting Agenda - Cape Canaveral, FL | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Cape Canaveral, FL Cape Canaveral, FL FUPWG Meeting Agenda - Cape Canaveral, FL October 7, 2013 - 3:00pm Addthis FUPWG Spring 2007 - Cocoa Beach, FL: Launching a New Era of Energy Efficiency" Hosted by: Florida Power and Light Company logo FEMP logo May 1-2, 2007 Hosted by Florida Power and Light Company Monday, April 30, 2007 5:00 - 6:30 Steering Committee meeting at Skylab/Atlas Conference Room, Doubletree Hotel 6:30 until... Networking dinner at 3 Wishes Restaurant, Doubletree Hotel Tuesday, May 1, 2007 7:45 - 8:30 Registration/Continental Breakfast 8:30 - 8:45 Florida Power & Light Welcome Marlene Santos, FPL Vice President of Customer Service 8:45 - 9:00 FEMP Welcome David McAndrew, FEMP 9:00 - 9:30 Washington Update David McAndrew, FEMP National Defense 2007 Authorization

27

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

7170 7170 Sampling Date: 10/05/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report 12 1 of 12

28

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

227 227 Sampling Dates: 03/31/04 - 04/01/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report

29

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

124 124 Sampling Date: 01/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report 18 1 of 18

30

S M Stoller Quarterly Sampling, STAR Center, Largo, FL  

Office of Legacy Management (LM)

531 531 Sampling Date: 04/16/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report 21 1 of 21

31

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

8014 8014 Sampling Date: 11/09/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D. Laboratory Director e-Hardcopy 2.0 Automated Report 12 1 of 12

32

S M Stoller Star Center-WWNA Monthly; Largo, FL  

Office of Legacy Management (LM)

623 Sampling Date: 020205 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ...

33

City of Quincy, FL Smart Grid Project | Open Energy Information  

Open Energy Info (EERE)

FL Smart Grid Project FL Smart Grid Project Jump to: navigation, search Project Lead City of Quincy, FL Country United States Headquarters Location Quincy, Florida Recovery Act Funding $2,471,041.00 Total Project Value $4,942,082.00 Coverage Area Coverage Map: City of Quincy, FL Smart Grid Project Coordinates 30.5871392掳, -84.5832453掳 Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[]}

34

Company Name: JobsInNH.com  

E-Print Network [OSTI]

Company Name: JobsInNH.com Web Site: www.jobsinnh.com Industry: Advertising & Marketing Brief Company Overview: "Since 2002, JobsInNH.com has been New Hampshire?s #1 employment resource. As recruiting and accelerate your job search. Connect with the best employers in the state who are hiring now" Majors

New Hampshire, University of

35

DOE - Office of Legacy Management -- Virginia-Carolina Chemical Corp - FL  

Office of Legacy Management (LM)

Virginia-Carolina Chemical Corp - Virginia-Carolina Chemical Corp - FL 06 FUSRAP Considered Sites Site: Virginia-Carolina Chemical Corp. (FL.06 ) Eliminated from consideration under FUSRAP - Referred to US EPA and State of Florida Designated Name: Not Designated Alternate Name: Conserv Corporation FL.06-1 Location: Nichols , Florida FL.06-2 Evaluation Year: 1985 FL.06-1 Site Operations: Process development studies and pilot plant testing of uranium recovery from phosphoric acid during the mid-1950s. Site Disposition: Eliminated - No Authority FL.06-1 FL.06-4 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium Radiological Survey(s): Yes FL.06-2 Site Status: Eliminated from consideration under FUSRAP - Referred to US EPA and State of Florida FL.06-1

36

DOE - Office of Legacy Management -- University of Miami - FL 0-01  

Office of Legacy Management (LM)

Miami - FL 0-01 Miami - FL 0-01 FUSRAP Considered Sites Site: UNIVERSITY OF MIAMI (FL.0-01 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Miami , Florida FL.0-01-1 Evaluation Year: 1987 FL.0-01-1 Site Operations: Research. FL.0-01-1 Site Disposition: Eliminated - Potential for contamination considered remote based on nature of the operations FL.0-01-1 Radioactive Materials Handled: None Indicated Primary Radioactive Materials Handled: None Indicated FL.0-01-1 Radiological Survey(s): No Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to UNIVERSITY OF MIAMI FL.0-01-1 - Aerospace Letter; Young to Wallo; Subject: Elimination Recommendation -- Colleges and Universities; September 23, 1987

37

DOE - Office of Legacy Management -- R Brew Co - NH 01  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

R Brew Co - NH 01 R Brew Co - NH 01 FUSRAP Considered Sites Site: R. BREW CO. (NH.01 ) Eliminated from consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Concord , New Hampshire NH.01-1 Evaluation Year: 1994 NH.01-2 Site Operations: Conducted vacuum furnace tests using uranium and copper billets. NH.01-1 NH.01-3 Site Disposition: Eliminated - Potential for contamination remote NH.01-2 Radioactive Materials Handled: Yes Primary Radioactive Materials Handled: Uranium NH.01-1 NH.01-3 Radiological Survey(s): Yes - radiological monitoring during operations NH.01-3 Site Status: Eliminated from consideration under FUSRAP Also see Documents Related to R. BREW CO. NH.01-1 - Memorandum/Checklist; Landis to File; Subject: R. Brew

38

FUPWG Meeting Agenda - Destin, FL | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Destin, FL Destin, FL FUPWG Meeting Agenda - Destin, FL October 7, 2013 - 2:56pm Addthis Going coastal for energy efficiency. FUPWG. April 15-16, 2008, Destin, Florida Gulf Power: A Southern Company FEMP logo April 15-16, 2008 Hosted by Gulf Power Monday, April 14, 2008 6:30 pm Steering Committee Meeting & Networking Dinner Ocean Club 8955 US Highway 98 W Miramar Beach, FL 32550 Tuesday, April 15, 2008 7:45 - 8:30 am Registration and Continental Breakfast 8:30 - 8:45 am Gulf Power Welcome P. Bernard Jacob, Customer Operations Vice President 8:45 - 9:15 am FEMP Welcome David McAndrew, FEMP 9:15 - 10:00 am Washington Update David McAndrew, FEMP 10:00 - 10:30 am Technology Update Paul Kistler 10:30 - 11:00 am Networking Break & New Member Mentor Introductions 11:00 - 11:30 am Gulf Power Success Story - NAS Chiller Replacement

39

The Florida State University Panama City, FL 32405-1099  

E-Print Network [OSTI]

The Florida State University Panama City, FL 32405-1099 Office of Student Affairs 路 4750 Collegiate their October 3, 2005 MEMORANDUM TO: Faculty and Students, Panama City FROM: Melissa A. Jones, Director, Office of Student Affairs, Panama City RE: Special Instructions for Panama City Campus pertaining to the FSU

40

Apple Tree, NH Big Tree for May By Anne Krantz, NH Big Tree Team,  

E-Print Network [OSTI]

Apple Tree, NH Big Tree for May By Anne Krantz, NH Big Tree Team, UNH Cooperative Extension The explosion of apple blossoms in May transforms the most gnarled old tree into a delicate cloud of beauty (1817-1862) in his essay "The Wild Apple Tree," described the blossoms perfectly: `The flowers

New Hampshire, University of

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

TRIBAL ISSUES TOPIC GROUP MEETING SUMMARY JACKSONVILLE, FL  

Broader source: Energy.gov (indexed) [DOE]

JACKSONVILLE, FL JACKSONVILLE, FL JANUARY 20, 1999 Mr. Kevin Blackwell (USDOT/FRA) updated the group on the status of the DOT response to DOE's inquiry about the tribal right to inspect rail shipments. The response was in the final stages of review in the General Counsel's office and is expected by July 1999. The Group has added a representative from the NRC General Counsel's office, as a topic group member, to help keep abreast of developments in the NRC's upcoming draft rulemaking regarding tribes and advanced notification. The group also discussed the research that has been conducted on the issue of developing a "umbrella grant" from DOE to states and tribes. Tribes concerns differ from State concerns because of disparities in available infrastructure to administer grants and funding equity issues.

42

Determination of the ( Ammonium (NH4  

E-Print Network [OSTI]

, paleoclimate history, biologic cycling of nutrients, ground-water contamination, and natural remediation contributed to understanding of water-supply sustainability, ground-water/surface-water interactionsDetermination of the ( 15 N/ 14 N) of Ammonium (NH4 + ) in Water: RSIL Lab Code 2898 Chapter 15

43

S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL  

Office of Legacy Management (LM)

B100 Monthly/Effluent; Largo, FL B100 Monthly/Effluent; Largo, FL 7030-226 Accutest Job Number: F30882 Sampling Date: 04/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

44

S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL  

Office of Legacy Management (LM)

B100 Monthly/Effluent; Largo, FL B100 Monthly/Effluent; Largo, FL 7030-226 Accutest Job Number: F29123 Sampling Date: 01/06/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

45

S M Stoller STAR Center- 4.5 Acre Site, Largo, FL  

Office of Legacy Management (LM)

STAR Center- 4.5 Acre Site, Largo, FL STAR Center- 4.5 Acre Site, Largo, FL 110406202 Accutest Job Number: F25243 Sampling Date: 07/06/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

46

S M Stoller STAR Center- 4.5 Acre Site, Largo, FL  

Office of Legacy Management (LM)

STAR Center- 4.5 Acre Site, Largo, FL STAR Center- 4.5 Acre Site, Largo, FL 7030-226/Monthly Accutest Job Number: F27168 Sampling Date: 10/05/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable.

47

S M Stoller Star Center-B100 Monthly/Effluent; Largo, FL  

Office of Legacy Management (LM)

B100 Monthly/Effluent; Largo, FL B100 Monthly/Effluent; Largo, FL 7031-226 Accutest Job Number: F35493 Sampling Date: 10/04/05 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

48

S M Stoller STAR Center- 4.5 Acre Site, Largo, FL  

Office of Legacy Management (LM)

STAR Center- 4.5 Acre Site, Largo, FL STAR Center- 4.5 Acre Site, Largo, FL 110406202 Accutest Job Number: F23552 Sampling Date: 04/20/04 Report to: S M Stoller Cathy.Kelleher@gjo.doe.gov ATTN: Cathy Kelleher Total number of pages in report: Certifications: FL (DOH E83510), NC (573), NJ (FL002), MA (FL946), IA (366), LA (03051), KS (E-10327), SC, AK This report shall not be reproduced, except in its entirety, without the written approval of Accutest Laboratories. Southeast * 4405 Vineland Road * Suite C-15 * Orlando, FL 32811 * tel: 407-425-6700 * fax: 407-425-0707 * http://www.accutest.com Test results contained within this data package meet the requirements of the National Environmental Laboratory Accreditation Conference and/or state specific certification programs as applicable. Harry Behzadi, Ph.D.

49

NH House Committee_April27 2005  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mercury Control Mercury Control Technology R&D Program for Coal-Fired Boilers Working Session of the New Hampshire House Science, Technology, & Energy Committee April 26, 2005 Concord, New Hampshire Thomas J. Feeley, III thomas.feeley@netl.doe.gov National Energy Technology Laboratory NH House Committee_April 2005 Mercury Control Technology Field Testing Program Performance/Cost Objectives * Have technologies ready for commercial demonstration by 2007 for all coals * Reduce "uncontrolled" Hg emissions by 50-70% * Reduce cost by 25-50% compared to baseline cost estimates Baseline Costs: $50,000 - $70,000 / lb Hg Removed 2000 Year Cost NH House Committee_April 2005 Stages of Mercury Control Technology Development DOE RD&D Model Lab/Bench/Pilot-Scale Testing Field Testing

50

E-Print Network 3.0 - aurigae fl lyrae Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Search Sample search results for: aurigae fl lyrae Page: << < 1 2 3 4 5 > >> 1 Astronomy C Tiger Invitational February 20, 2010 Summary: Astronomy C Tiger Invitational...

51

In situ chemical sensing in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time  

E-Print Network [OSTI]

; accepted 14 June 2005; published 18 July 2005 Gallium nitride and its alloys promise to be key materials.1116/1.1993616 I. INTRODUCTION In recent years, gallium-nitride GaN - and aluminum- gallium-nitride AlGaN -based are grown at high temperatures e.g., up to 1100 掳C using large concentrations of H2 carrier and NH3 N source

Rubloff, Gary W.

52

J25097-1 Fl_L2 Final Report  

Office of Legacy Management (LM)

5097-1 5097-1 Job Description: Star Center For: S.M. Stoller Corporation 2597 B 3/4 Road Grand Junction, CO 81503 Attention: Mr. Charles Tabor _____________________________________________ Nancy Robertson Project Manager II nancy.robertson@testamericainc.com 09/19/2008 Methods: FDEP, DOH Certification #: E84282, E81005, E81010 These test results meet all the requirements of NELAC unless specified in the case narrative. All questions regarding this test report should be directed to the TestAmerica Project Manager who signed this test report. The estimated uncertainty associated with these reported results is available upon request. The results contained in this test report relate only to these samples included herein. TestAmerica Laboratories, Inc. TestAmerica Tampa 6712 Benjamin Road, Suite 100, Tampa, FL 33634

53

Ab initio molecular dynamics investigations on the SN2 reactions of OH? with NH2F and \\{NH2Cl\\}  

Science Journals Connector (OSTI)

The bimolecular nucleophilic substitution (SN2) reactions of hydroxide anion (OH?) with fluoroamine (NH2F) and chloramine (NH2Cl) have been investigated with ab initio molecular dynamics simulations. For the SN2 reaction of OH? with NH2F, there are two main dynamic reaction pathways after passing the [HO贩NH2贩稦]? barrier. The first one is that the [HO贩NH2贩稦]? transition state directly dissociates to the products of F? and NH2OH without involving any dynamic intermediate complex, and on the contrary, the other one involves the dynamic hydrogen bond F?贩稨?NH?OH and/or F?贩稨?O?NH2 intermediate complexes. As to the SN2 reaction of OH? with NH2Cl, there is only one dominant dynamic reaction pathway, which leads to the products of Cl? and NH2OH directly. According to our calculations, the statistical theories including the Rice朢amsperger朘assel朚arcus (RRKM) theory and transition state (TS) theory cannot be utilized to model the reaction kinetics for these two SN2 reactions.

Feng Yu; Lei Song; Xiaoguo Zhou

2011-01-01T23:59:59.000Z

54

Mechanism of Nitric Oxide Reactivity and Fluorescence Enhancement of the NO-Specific Probe CuFL1  

E-Print Network [OSTI]

The mechanism of the reaction of CuFL1 (FL1 = 2-{2-chloro-6-hydroxy-5-[(2-methylquinolin-8-ylamino)methyl]-3-oxo-3H-xanthen-9-yl}benzoic acid) with nitric oxide (NO) to form the N-nitrosated product FL1-NO in buffered ...

McQuade, Lindsey E.

55

International Journal of Foundations of Computer Science fl World Scientific Publishing Company  

E-Print Network [OSTI]

International Journal of Foundations of Computer Science c fl World Scientific Publishing Company Science, University of Idaho Moscow, Idaho 83844颅1010, USA and MOSHE DROR MIS Department, University

Krings, Axel W.

56

NH4-smectite: Characterization, hydration properties and hydro mechanical behaviour  

E-Print Network [OSTI]

NH4-smectite: Characterization, hydration properties and hydro mechanical behaviour M. Gautier a and drive to environmental problems. The purpose of this study was to understand the hydro- physical changes the pressure on small amounts of samples, proved the strong increase of the permeability of NH4-smectite

Paris-Sud XI, Universit茅 de

57

NH Clean Power Act (New Hampshire) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

NH Clean Power Act (New Hampshire) NH Clean Power Act (New Hampshire) NH Clean Power Act (New Hampshire) < Back Eligibility Agricultural Commercial Industrial Investor-Owned Utility Municipal/Public Utility Utility Savings Category Alternative Fuel Vehicles Hydrogen & Fuel Cells Buying & Making Electricity Water Home Weatherization Solar Wind Program Info State New Hampshire Program Type Environmental Regulations Provider NH Department of Environmental Services The Act calls for annual reductions of multiple pollutants, including SO2, Nox, CO2, and mercury. The Act calls for an 87% reduction in SO2 emissions and a 70% reduction in Nox emissions from 1999 levels. CO2 emissions are to be reduced to 1990 levels by the end of 2006. Act is implemented under NH Rules Env-A 2900. This act applies specifically to three existing fossil

58

Where Are They? N = N* fs fGHZ fp nH fl fJ ffEufmfifcL/T  

E-Print Network [OSTI]

(1011 L) Defined by energy usage. #12;Dyson Spheres Why waste power? If you want to harness the power.7, -0.3) 路L/T = 10-3 (-5, +2) 路N = 19 (from 1 (us) to 1.1x1011) N #12;"There's no use trying," she said

Walter, Frederick M.

59

EPR and IR studies of [Ru(NH?)?]+-Y and [Ru(NH?)?N?]+-Y type zeolites  

E-Print Network [OSTI]

EPR AND IR STUDIES OF [Ru(NH ) ] -Y 3 6 AND [Ru(NE ) N ] -Y TYPE ZEOLITES 2+ A Thesis by RAYMOND LEON LEUBNER Submitted to the Graduate College of Texas A&M University in partia1 fulfillment of the requirement for the degree of MASTER... OF SCIENCE December 1973 Major Subject: Chemistry EPR AND IR STUDIES OF [Ru(NH3) ] -Y 3+ AND [Ru(NH3) N ) -Y TYPE ZEOLITES 2+ 3&2 A Thesis by RAYMOND LEON LEUBNER Approved as to style and content by: (Chairman of Committ (Head of Department) (Memb...

Leubner, Raymond Leon

2012-06-07T23:59:59.000Z

60

Measurement and Modeling of Spatial NH3 Storage Distributions...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

in a Commercial Small Port Cu Zeolite Urea SCR Catalyst Measurement and Modeling of Spatial NH3 Storage Distributions in a Commercial Small Port Cu Zeolite Urea SCR Catalyst...

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Quasielastic neutron scattering of -NH3 and -BH3 rotational dynamics...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Quasielastic neutron scattering of -NH3 and -BH3 rotational dynamics in orthorhombic ammonia borane. Quasielastic neutron scattering of -NH3 and -BH3 rotational dynamics in...

62

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

accomplishments accomplishments are impressive in themselves, and associ- ated with each milestone is the expansion of future produc- tion opportunities as another technical barrier is overcome. The extension of recovery opportunities into deep water has established the deep offshore as an area of considerable national significance. A second source of increased supply is gas from coalbed formations. Natural gas production from coalbed methane fields continued to grow in 1996 as projects initiated mainly in the early to mid 1990's matured through the dewatering phase into higher rates of gas production. Coalbed forma- tions contribute almost 1 trillion cubic feet, roughly 5 per- cent, to total U.S. production. Continued production growth from coalbeds is not likely in light of the precipitous drop in new wells completed in coalbed formations since the termination of the production tax

63

Vibrational spectroscopy of the ammoniated ammonium ions NH sub 4 sup + (NH sub 3 ) sub n (n = 1-10)  

SciTech Connect (OSTI)

The gas-phase vibration-internal rotation spectra of mass-selected ammoniated ammonium ions, NH{sub 4}{sup +}(NH{sub 3}){sub n} (for n = 1-10), have been observed from 2600 to 4000 cm{sup {minus}1}. The spectra show vibrational features that have been assigned to modes involving both the ion core species, NH{sub 4}{sup +}, and the first shell NH{sub 3} solvent molecules. Nearly free internal rotation of the solvent molecules about their local C{sub 3} axes in the first solvation shell has been observed in the smaller clusters (n = 1-6). For the larger clusters studied (n = 7-10) the spectra converge, with little difference between clusters differing by one solvent molecule. For these clusters, the spectrum in the 3200-3500 cm{sup {minus}1} region is quite similar to that of liquid ammonia, and the entire region of 2600-3500 cm{sup {minus}1} also bears considerable resemblance to the spectra of ammonium salts dissolved in liquid ammonia under some chemical conditions. This indicates the onset of a liquidlike environment for the ion core and first shell solvent molecules in clusters as small as NH{sub 4}{sup +}(NH{sub 3}){sub 8}.

Price, J.M.; Crofton, M.W.; Lee, Y.T. (Lawrence Berkeley Lab., CA (United States) Univ. of California, Berkeley (United States))

1991-03-21T23:59:59.000Z

64

INTRODUCTION Since Zadeh [20] introduced Fuzzy Sets, many discussions have taken place whether Fuzzy Logic (FL) deserves a place  

E-Print Network [OSTI]

Fuzzy Logic (FL) deserves a place in control theory. Three properties speak in favour of FL control larger than the true maximal input for a system, Fuzzy Logic Controllers (FLC) by nature restrict A j x 碌 j x ( ) NLQ THEORY BASED STABILITY ANALYSIS OF SISO FUZZY LOGIC CONTROLLERS J?RGEN VAN GORP

65

THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 314 WESTCOTT * TALLAHASSEE, FL. 32306-1410 Florida State University  

E-Print Network [OSTI]

THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 314 WESTCOTT * TALLAHASSEE, FL. 32306 to gs-drg@admin.fsu.edu: Florida State University The Graduate School 314 Westcott Building Tallahassee be carried over. #12;THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 314 WESTCOTT * TALLAHASSEE, FL

66

THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 408 WESTCOTT * TALLAHASSEE, FL. 32306-1410 Florida State University  

E-Print Network [OSTI]

THE FLORIDA STATE UNIVERSITY * THE GRADUATE SCHOOL * 408 WESTCOTT * TALLAHASSEE, FL. 32306 Fellowship 颅 Fall 2011 408 Westcott Building Tallahassee, Florida 32306-1410 Deadline The application STATE UNIVERSITY * THE GRADUATE SCHOOL * 408 WESTCOTT * TALLAHASSEE, FL. 32306-1410 Fall 2011 ***FOUR

Bowers, Philip L.

67

25th AIAA Applied Aerodynamics Conference June 2528, 2007/Miami, FL  

E-Print Network [OSTI]

25th AIAA Applied Aerodynamics Conference June 25颅28, 2007/Miami, FL Validation Study of Aerodynamic Analysis Tools for Design Optimization of Helicopter Rotors Seongim Choi , Juan J. Alonso , Edwin current aerodynamic analysis tools in predicting the unsteady flow field generated by helicopter rotors

Alonso, Juan J.

68

St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids  

Broader source: Energy.gov [DOE]

Breakout Session 3A桟onversion Technologies III: Energy from Our Waste梂ill we Be Rich in Fuel or Knee Deep in Trash by 2025? St. Petersburg, FL: Vehicle Use of Recycled Natural Gas Derived from Wastewater Biosolids William Eleazer, Supervising Engineer, Brown and Caldwell

69

Deciduous Fruit Options for North FL Landscapes by Terry DelValle, Urban Horticulture Extension Agent  

E-Print Network [OSTI]

Deciduous Fruit Options for North FL Landscapes by Terry DelValle, Urban Horticulture Extension your homework first. Site Selection: Here is a list of criteria. Fruit require an open sunny spot/variety will get at matur- ity. Selecting Varieties: Select varieties adapted to our area. Deciduous fruit, also

Watson, Craig A.

70

Machine Learning, ??, 1--6 (1994) fl 1994 Kluwer Academic Publishers, Boston. Manufactured in The Netherlands.  

E-Print Network [OSTI]

Machine Learning, ??, 1--6 (1994) c fl 1994 Kluwer Academic Publishers, Boston. Manufactured in The Netherlands. Book Review: C4.5: Programs for Machine Learning by J. Ross Quinlan. Morgan Kaufmann Publishers are among the most well known and widely used of all machine learning methods. Among decision tree

Salzberg, Steven

71

DOE Zero Energy Ready Home Case Study: Southeast Volusia Habitat for Humanity, Edgewater, FL  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready affordable home in Edgewater, FL, that achieves a HERS score of 49 without PV. The one-story, 1,250-ft2 home has 2x4 walls with fiberglass batt inside plus R-3...

72

DOE Zero Energy Ready Home Case Study, Manatee County Habitat for Humanity, Ellenton, FL, Affordable  

Broader source: Energy.gov [DOE]

Case-study of a DOE Zero Energy Ready Home in Ellenton, FL that scored HERS 53 without PV, HERS 23 with PV. This 1,143 ft2 affordable home has R-23 ICF walls, a spray-foamed sealed attic, solar hot water, and a ducted mini-split heat pump.

73

DOE Zero Energy Ready Home Case Study, e2Homes, Winterpark, FL, Custom Homes  

Broader source: Energy.gov [DOE]

Case study of a DOE Zero Energy Ready Home in Winter Park, FL that scored HERS 57 without PV or HERS -7 with PV. This 4,305 ft2 custom home has autoclaved aerated concrete walls, a sealed attic with R-20 spray foam, and ductless mini-split heat pumps.

74

ARTM E. MASUNOV 12424 Research Parkway, Suite 400, Orlando, FL 32826 USA  

E-Print Network [OSTI]

Professor, NanoScience Technology Center, Department of Chemistry, Department of Physics & Florida Solar Energy Center, University of Central Florida, FL (UCF) 2002-2005: Postdoctoral Research Associate, Russia (with Prof. P. M. Zorkii) #12;Dr. Art毛m E. Masunov, UCF NSTC 2 Professional Societies: - American

Kik, Pieter

75

Public Service Co of NH | Open Energy Information  

Open Energy Info (EERE)

NH NH (Redirected from PSNH) Jump to: navigation, search Name Public Service Co of NH Place New Hampshire Service Territory New Hampshire Website www.psnh.com Green Button Landing Page www.psnh.com/SaveEnergyMo Green Button Reference Page www.psnh.com/SaveEnergyMo Green Button Implemented Yes Utility Id 15472 Utility Location Yes Ownership I NERC Location NPCC NERC NPCC Yes ISO NE Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Wholesale Marketing Yes Activity Retail Marketing Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] Energy Information Administration Form 826[2] LinkedIn Connections

76

PORTSMOUTH HARBOR AND PISCATAQUA RIVER, NH & ME NAVIGATION IMPROVEMENT PROJECT  

E-Print Network [OSTI]

the states of New Hampshire and Maine. The existing project consists of 35-foot deep entrance channel, with a minimum width of 400 feet, extending about 6.2 miles from deep water at the harbor entrance upriverPORTSMOUTH HARBOR AND PISCATAQUA RIVER, NH & ME NAVIGATION IMPROVEMENT PROJECT 21 August 2014

US Army Corps of Engineers

77

GY EERE PROJECT MANAGEMENT CENTER NEPA DETERMINATION RECIPIENT:County of Escambia. FL  

Broader source: Energy.gov (indexed) [DOE]

, , ... ~. u.s. DEPAR n-IENT OF ENER GY EERE PROJECT MANAGEMENT CENTER NEPA DETERMINATION RECIPIENT:County of Escambia. FL PROJECT TITLE: Road Prison Geothermal Earth Coupled HVAC Upgrade Page 1 of2 STATE: FL Funding Opportunity Announcement Numbtr Procurement Instrument Number NEPA Control Number CID Number DE-FOA-OOOOO13 DE-EEOOOO764.oo1 0 Based on my review of the information concerning the proposed action. as NEPA Compliance Officer (authorized under DOE Order 451.IA), I have made the following determination; ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply

78

File:USDA-CE-Production-GIFmaps-FL.pdf | Open Energy Information  

Open Energy Info (EERE)

FL.pdf FL.pdf Jump to: navigation, search File File history File usage Florida Ethanol Plant Locations Size of this preview: 463 脳 599 pixels. Other resolution: 464 脳 600 pixels. Full resolution 鈥(1,275 脳 1,650 pixels, file size: 274 KB, MIME type: application/pdf) Description Florida Ethanol Plant Locations Sources United States Department of Agriculture Related Technologies Biomass, Biofuels, Ethanol Creation Date 2010-01-19 Extent State Countries United States UN Region Northern America States Florida External links http://www.nass.usda.gov/Charts_and_Maps/Ethanol_Plants/ File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 16:12, 27 December 2010 Thumbnail for version as of 16:12, 27 December 2010 1,275 脳 1,650 (274 KB) MapBot (Talk | contribs) Automated bot upload

79

u.s. DEPARTMENT OF ENERGY EERE PROJECT MANAGEMENT CENTER NFPA DETElU.flNATION  

Broader source: Energy.gov (indexed) [DOE]

DETElU.flNATION DETElU.flNATION RECIPIENT: lowa State University PROJE(.T TITLE: An Undergraduate Minor in Wind Energy Science, Engineering, and Policy Page 1 of2 STATE : IA Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA..()()()()()9() DE-EEOOO3549 GFO-l0-497 0 Based on my review orlhe inrormation concerning the proposed action, 85 NEPA Compliance Officer (authorized under DOE Order 451.IA), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited to, literature surveys, inventories, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and

80

Recreation of Br鴑sted acid sites in phosphorus-modified HZSM-5(Ga) by modification with various metal cations  

Science Journals Connector (OSTI)

Abstract To investigate the recreation of Br鴑sted acid sites in phosphorus-modified HZSM-5(Ga) zeolites by modification with various metal cations, we prepared several HZSM-5(Ga) zeolites co-modified with Mg, Ca, La or Zr and P (M/P/HZSM-5(Ga)). From FT-IR, 31P MAS NMR, and NH3-TPD measurements, it was found that the introduced metal cations (M) of Mg, Ca, La, and Zr react with the pre-introduced phosphorus to generate phosphorus species such as Mx(PO4)y, resulting in the recreation of some native Br鴑sted acid sites (Si(OH)Ga). The degree of recreation of the Br鴑sted acid sites was strongly dependent on the M/Ga ratio and doped metal valence. Modification with La and Zr that have higher valences more effectively recreated the Br鴑sted acid sites compared to Mg and Ca, which have di-valence. The conversion of ethanol to propylene was carried out over the M/P/HZSM-5(Ga). The propylene yield increased with increasing M/Ga ratio and reached maximum values of ca. 26燙-% for Zr/P/HZSM-5(Ga) with a Zr/Ga ratio of 0.25 and ca. 29燙-% for La/P/HZSM-5(Ga) with a La/Ga ratio of 0.4. The propylene yield hardly changed for the co-modified HZSM-5(Ga) zeolites during the 24爃 of reaction time, indicating the suppression of both carbonaceous deposition and the release of gallium from the zeolite framework.

Nao Tsunoji; Takushi Sonoda; Yoshiyasu Furumoto; Masahiro Sadakane; Tsuneji Sano

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Public Service Co of NH | Open Energy Information  

Open Energy Info (EERE)

Name Public Service Co of NH Name Public Service Co of NH Place New Hampshire Service Territory New Hampshire Website www.psnh.com Green Button Landing Page www.psnh.com/SaveEnergyMo Green Button Reference Page www.psnh.com/SaveEnergyMo Green Button Implemented Yes Utility Id 15472 Utility Location Yes Ownership I NERC Location NPCC NERC NPCC Yes ISO NE Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Wholesale Marketing Yes Activity Retail Marketing Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] Energy Information Administration Form 826[2] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now!

82

Evaluation of NH3-SCR Catalyst Technology on a 250-kW Stationary...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

NH3-SCR Catalyst Technology on a 250-kW Stationary Diesel Genset Evaluation of NH3-SCR Catalyst Technology on a 250-kW Stationary Diesel Genset 2005 Diesel Engine Emissions...

83

Study of On-Board Ammonia (NH3) Generation for SCR Operation...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Study of On-Board Ammonia (NH3) Generation for SCR Operation Study of On-Board Ammonia (NH3) Generation for SCR Operation The feasibility of on-board ammonia generation was...

84

Structure-Activity Relationships in NH3-SCR over Cu-SSZ-13 as...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Structure-Activity Relationships in NH3-SCR over Cu-SSZ-13 as Probed by Reaction Kinetics and EPR Studies. Structure-Activity Relationships in NH3-SCR over Cu-SSZ-13 as Probed by...

85

EECBG Success Story: Grants to Help N.H. Towns Conserve Energy...  

Broader source: Energy.gov (indexed) [DOE]

Grants to Help N.H. Towns Conserve Energy EECBG Success Story: Grants to Help N.H. Towns Conserve Energy March 19, 2010 - 4:17pm Addthis New Hampshire has a plan to lower expenses...

86

NH3 generation over commercial Three-Way Catalysts and Lean-NOx...  

Broader source: Energy.gov (indexed) [DOE]

use by sector * cars light trucks 3 Managed by UT-Battelle for the U.S. Department of Energy Why NH 3 -generation on TWCs? * Zeolite-based NH 3 -SCR has been shown to have very...

87

Low Temperature Milling of the LiNH2 + LiH Hydrogen Storage System...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Milling of the LiNH2 + LiH Hydrogen Storage System. Low Temperature Milling of the LiNH2 + LiH Hydrogen Storage System. Abstract: Ball milling of the LiNH2 + LiH storage system was...

88

8798_FL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The Movie . . . . . . . . . . . . . . . . . 8 Simulation Matches Historic Gamma-Ray Burst. . . . . . . . . . . . . . . . 11 Nearby Supernova Factory Churns Out Discoveries...

89

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

90

GaN High Power Devices  

SciTech Connect (OSTI)

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

91

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

92

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

93

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name: GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and...

94

Theoretical study of the ammoniated NH/sub 4/ radical and related structures  

SciTech Connect (OSTI)

The ground- and some of the excited-state surfaces for the reaction of the Rydberg radical NH/sub 4/ to give either NH/sub 3/ + H or NH/sub 2/ + H/sub 2/ are computed. The preferred ground reaction channel is that observed experimentally, the formation of NH/sub 3/ + H. The Rydberg character, as well as the low barrier for fragmentation, is rationalized using a Rydberg extended-state structure correlation diagram. The excited-state surfaces show deep potential wells whose forms are also rationalized using this correlation diagram. Calculations on the surface of tetramethylammonium radical show no enhanced stability due to alkyl substitution. Comparative calculations on the complexation energies of HN/sub 4//sup +/ (NH/sub 3/)/sub n/ and NH/sub 4/(NH/sub 3/)/sub n/, n = 1-6, show the semiionic character of the Rydberg radical. The variation of stepwise complexation energies with n for the Rydberg species is not completely understood. The stability of solvated NH/sub 4/ radical in liquid NH/sub 3/ is estimated to be of the same order as (NH/sub 4//sup +/)/sub s/ + (e/sup -/)/sub s/.

Kassab, E.; Evleth, E.M.

1987-03-18T23:59:59.000Z

95

Array-type NH.sub.3 sensor  

SciTech Connect (OSTI)

An array-type sensor that senses NH.sub.3 includes non-Nernstian sensing elements constructed from metal and/or metal-oxide electrodes on an O.sub.2 ion conducting substrate. In one example sensor, one electrode may be made of platinum, another electrode may be made of manganese (III) oxide (Mn.sub.2O.sub.3), and another electrode may be made of tungsten trioxide (WO.sub.3). Some sensing elements may further include an electrode made of La.sub.0.6Sr.sub.0.4Co.sub.0.2Fe.sub0.8O.sub.3 and another electrode made of LaCr.sub.0.95.Mg.sub.0.05O.sub.3.

West, David Lawrence; Montgomery, Frederick Charles; Armstrong, Timothy R; Warmack, Robert J

2013-12-31T23:59:59.000Z

96

Beta decay of Ga-62  

E-Print Network [OSTI]

We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

97

Defect ordering in epitaxial a-GaN(QQ01) H. Z. Xiao, N.-E. Lee, R. C. Powell,") Z. Ma, L. J. Chou,b) L. H. Allen, J. E. Greene,  

E-Print Network [OSTI]

epitaxial wurtzite-structure o-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted, including gas-source molecular-beam epitaxy (GSMBE),' reactive-ion MBE (RIMBE), plasma- assisted MBE (PAMBE- purity (99.9995%) NH3 flux, regulated with a mass-flow con- `kurrent address: Solar Cells Inc., 1702 N

Allen, Leslie H.

98

A review of "The Restoration: England in the 1660s." by N.H. Keeble  

E-Print Network [OSTI]

80 SEVENTEENTH-CENTURY NEWS N.H. Keeble. The Restoration: England in the 1660s. History of Early Modern England series. Oxford: Blackwell, 2002. xvi + 270 pp. $34.95. Review by TY M. REESE, UNIVERSITY OF NORTH DAKOTA. N.H. Keeble...80 SEVENTEENTH-CENTURY NEWS N.H. Keeble. The Restoration: England in the 1660s. History of Early Modern England series. Oxford: Blackwell, 2002. xvi + 270 pp. $34.95. Review by TY M. REESE, UNIVERSITY OF NORTH DAKOTA. N.H. Keeble...

Ty M. Reese

2003-01-01T23:59:59.000Z

99

J14252-1 FL Level 2 Rpt PQL Final Report.pdf  

Office of Legacy Management (LM)

660-14252-1 660-14252-1 Job Description: Pinellas Annual Sampling For: S.M. Stoller Corporation 2597 B 3/4 Road Grand Junction, CO 81503 Attention: Mr. Charles Tabor Nancy Robertson Project Manager II nrobertson@stl-inc.com 03/29/2007 Methods: FDEP, DOH Certification #: E84282 These test results meet all the requirements of NELAC unless specified in the case narrative. All questions regarding this test report should be directed to the STL Project Manager who signed this test report. The estimated uncertainty associated with these reported results is available upon request. Project Manager: Nancy Robertson STL Tampa 6712 Benjamin Road Suite 100, Tampa, FL 33634 Tel (813) 885-7427 Fax (813) 885-7049 www.stl-inc.com Severn Trent Laboratories, Inc. Page 1 of 37 Page 2 of 37

100

DOE Challenge Home Case Study, Manatee County Habitat for Humanity, Ellenton, FL, Affordable  

Broader source: Energy.gov (indexed) [DOE]

Manatee County Manatee County Habitat for Humanity Ellenton, FL BUILDING TECHNOLOGIES OFFICE DOE Challenge Home builders are in the top 1% of builders in the country meeting the extraordinary levels of excellence and quality specifi ed by the U.S. Department of Energy. Every DOE Challenge Home starts with ENERGY STAR for Homes Version 3 for an energy-effi cient home built on a solid foundation of building science research. Then, even more advanced technologies are designed in for a home that goes above and beyond current code to give you the superior quality construction, HVAC, appliances, indoor air quality, safety, durability, comfort, and solar-ready components along with ultra-low or no utility bills. This provides homeowners with a quality home that will last for generations to come.

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Eliza Liu Leader Electronics Inc. 4FL, No.3, Lane 45, Pao Hsin Rd.  

Broader source: Energy.gov (indexed) [DOE]

Eliza Liu Eliza Liu Leader Electronics Inc. 4FL, No.3, Lane 45, Pao Hsin Rd. Hsin Tein, Taipei, (23 1) Taiwan, R.O.C Dear Ms. Liu: The attached notice advises you of the Department of Energy's (DOE) determination that certain products manufactured by Leader Electronics Inc. (L-E-I) do not comply with applicable energy conservation standards in the United States. The notice also advises you of your legal obligations. This determination stems from the certification reports filed by L-E-I pursuant to 10 C.F.R. 搂 430.62 (a)(4)(ix) regarding the performance of external power supplies manufactured by L-E-I. Violations of the applicable energy efficiency standards may be subject to civil penalties. Separate from this notice, DOE may issue a notice of civil penalty for such penalties as

102

Theoretical studies of the structures and electronic properties of U(NH{sub 2}){sub 3} and Np(NH{sub 2}){sub 3}  

SciTech Connect (OSTI)

The electronic structure of the model compounds U(NH{sub 2}){sub 3} and Np(NH{sub 2}){sub 3} is investigated with the aid of ab initio electronic structure techniques. The electronic ground states and equilibrium geometries of these complexes are determined using multi-configuration SCF techniques. Comparisons are made to their counterparts U(CH{sub 3}){sub 3} and Np(CH{sub 3}){sub 3}.

Hay, P.J.; Martin, R.L.

1993-10-01T23:59:59.000Z

103

Proceedings of the US Hydrographic Conference, Tampa, FL, 25-28 Apr 2011 THE PORT OF NORFOLK PROJECT  

E-Print Network [OSTI]

Proceedings of the US Hydrographic Conference, Tampa, FL, 25-28 Apr 2011 1 THE PORT OF NORFOLK for the Port of Norfolk Project are to explore viable methods of improvement with respect to both the process intuitive fashion, or providing it in a format that is inherently more useful. The Port of Norfolk Project

New Hampshire, University of

104

Machine Learning, 30, 241--273 (1998) fl 1998 Kluwer Academic Publishers, Boston. Manufactured in The Netherlands.  

E-Print Network [OSTI]

Machine Learning, 30, 241--273 (1998) c fl 1998 Kluwer Academic Publishers, Boston. Manufactured of a machine颅aided knowledge discovery process within the general area of drug design. Within drug design study reported in this paper supports four general lessons for machine learning and knowledge discovery

Page Jr., C. David

105

Cryogenic growth of Al nitride on GaAs(110): X-ray-photoemission spectroscopy and inverse-photoemission spectroscopy  

Science Journals Connector (OSTI)

We report on our recent studies of Al nitride growth on GaAs(110) formed by depositing Al onto a condensed ammonia overlayer on GaAs(110) at T=90 K using x-ray-photoemission spectroscopy and inverse-photoemission spectroscopy. We have also investigated the temperature dependence of the interface thus formed. The results show some limited amount of Al nitride formed at T=90 K even though the reaction is slow, but the overlayer mostly remains metallic until the substrate is heated up. Much of the reaction of Al with ammonia occurs at about T=170 K, above which the overlayer becomes insulating. The combined information from occupied and unoccupied states reveals new features of the interface formation, and is consistent with our previous synchrotron photoemission studies of Al/NH3/GaAs(100).

Ken T. Park and Y. Gao

1993-02-15T23:59:59.000Z

106

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study  

SciTech Connect (OSTI)

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

2010-10-14T23:59:59.000Z

107

Hydrogen Storage Properties of New Hydrogen-Rich BH3NH3-Metal...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Storage Properties of New Hydrogen-Rich BH3NH3-Metal Hydride (TiH2, ZrH2, MgH2, andor CaH2) Composite Systems. Hydrogen Storage Properties of New Hydrogen-Rich BH3NH3-Metal...

108

July 2013 GIS Workshops in Lee, NH SPACE IS LIMITED -PRE-REGISTRATION IS REQUIRED  

E-Print Network [OSTI]

July 2013 GIS Workshops in Lee, NH SPACE IS LIMITED - PRE-REGISTRATION IS REQUIRED Registration://gisworkshops.org email: gis@unh.edu Presented at the NH Sea Grant Extension Offices in Lee by the UNHCE Geospatial Outreach Program Workshop summary: Participants learn the basics of Geographic Information System (GIS

New Hampshire, University of

109

Futile transmembrane NH4 cycling: A cellular hypothesis to explain ammonium  

E-Print Network [OSTI]

4 to be preferred by plants, as its assimilation requires less energy than that of NO3 (1), only with intensive agriculture and cultivation of livestock, where high levels of NH3 emission, and subsequent NH4 is exceeded by as much as 10-fold, and damage to forest and agricultural crops alike has been attributed

Britto, Dev T.

110

RECIPIENT:Gwinnett Co, GA  

Broader source: Energy.gov (indexed) [DOE]

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

111

Novel GaAs Devices  

Science Journals Connector (OSTI)

As the dimensions of GaAs devices shrink, the effective electron velocity should increase, leading to a shorter transit time and to a ballistic or near-ballistic mode of operation (see Chapter 2). At the same ...

Michael Shur

1987-01-01T23:59:59.000Z

112

3-D agricultural air quality modeling: Impacts of NH3/H2S gas杙hase reactions and bi-directional exchange of NH3  

Science Journals Connector (OSTI)

Abstract Accurately simulating the transport and fate of reduced nitrogen (NHx=燼mmonia (NH3)+燼mmonium (NH4+))- and sulfur-containing compounds emitted from agricultural activities represents a major challenge in agricultural air quality modeling. In this study, the Community Multiscale Air Quality (CMAQ) modeling system is further developed and improved by implementing 22 ammonia (NH3)/hydrogen sulfide (H2S) related gas-phase reactions and adjusting a few key parameters (e.g., emission potential) for bi-directional exchange of NH3 fluxes. Several simulations are conducted over the eastern U.S. domain at a 12-km horizontal resolution for January and July 2002 to examine the impacts of those improved treatments on air quality. The 5th generation mesoscale model (MM5) and CMAQ predict an overall satisfactory and consistent performance with previous modeling studies, especially for 2-m temperature, 2-m relative humidity, ozone (O3), and fine particulate matter (PM2.5). High model biases exist for precipitation in July and also dry/wet depositions. The updated model treatments contribute to O3, NHx, and PM2.5 by up to 0.4爌pb, 1.0?g爉?3, and 1.0?g爉?3 in January, respectively, and reduce O3 by up to 0.8爌pb and contribute to \\{NHx\\} and PM2.5 by up to 1.2 and 1.1?g爉?3 in July, respectively. The spatial distributions of O3 in both months and sulfur dioxide (SO2) in January are mainly affected by inline dry deposition velocity calculation. The spatial distributions of SO2 and sulfate (SO42?) in July are affected by both inline dry deposition velocity and NH3/H2S reactions. The variation trends of NH3, NHx, ammonium nitrate (NH4NO3), PM2.5 and total nitrogen (TN) are predominated by bi-directional exchange of NH3 fluxes. Uncertainties of NH3 emission potentials and empirical constants used in the bi-directional exchange scheme may significantly affect the concentrations of \\{NHx\\} and PM2.5, indicating that a more accurate and explicit treatment for those parameters should be considered in the future work.

Kai Wang; Yang Zhang

2014-01-01T23:59:59.000Z

113

OPTICAL CONSTANTS OF NH{sub 3} AND NH{sub 3}:N{sub 2} AMORPHOUS ICES IN THE NEAR-INFRARED AND MID-INFRARED REGIONS  

SciTech Connect (OSTI)

Ammonia ice has been detected on different astrophysical media ranging from interstellar medium (ISM) particles to the surface of various icy bodies of our solar system, where nitrogen is also present. We have carried out a detailed study of amorphous NH{sub 3} ice and NH{sub 3}:N{sub 2} ice mixtures, based on infrared (IR) spectra in the mid-IR (MIR) and near-IR (NIR) regions, supported by theoretical quantum chemical calculations. Spectra of varying ice thicknesses were obtained and optical constants were calculated for amorphous NH{sub 3} at 15 K and 30 K and for a NH{sub 3}:N{sub 2} mixture at 15 K over a 500-7000 cm{sup 1} spectral range. These spectra have improved accuracy over previous data, where available. Moreover, we also obtained absolute values for the band strengths of the more prominent IR features in both spectral regions. Our results indicate that the estimated NH{sub 3} concentration in ISM ices should be scaled upward by ?30%.

Zanchet, Alexandre; Rodr韌uez-Lazcano, Yamilet; G醠vez, 觭car; Herrero, V韈tor J.; Escribano, Rafael; Mat, Bel閚, E-mail: belen.mate@csic.es [Instituto de Estructura de la Materia, IEM-CSIC, Serrano 123, E-28006 Madrid (Spain)

2013-11-01T23:59:59.000Z

114

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

115

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

116

NOT SPECIFIED IOTHER AMINDMENT 01' SOUCITAnONIMOD1FlCAnON OF CONTRACT I  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SPECIFIED IOTHER SPECIFIED IOTHER AMINDMENT 01' SOUCITAnONIMOD1FlCAnON OF CONTRACT I I COH'IRACT ID COOl! I PAGE OF PAGU 1 1 2 2. AIIPDMENTlMOOIRCAlION NO. ~. EFFECTIVE DATI! 4 R拢QUISmoNIPURCHASE REa. NO. IS.PR04CTNO.tII~' 068 See Block 16C 09SCOOl502 .~ .. , ClOIHI 00518 '.110 BY (I1G111Or """ Qfftt e) cooa 100518 Oak Ridge Oak Ridge U.S. Department of Energy U.S. Department of Energy P.O. Box 2001 P.O. Box 2001 oak Ridge TN 37831 Oak Ridge TN 37831 * IWIIi AHD ADQIWi5 OF COHrRACrn)RINO. _~ ao.IIPCOIIU ~ IIA. ANlHaawn OF ICUClTA'hOH HO. o AX RIDGE ASSOCIATED UNIVERSITIES, INC. P.O. BOX 117 II.DA1m(SEEne.u H, AX RIDGE TN 37830-6218 o " 1M. ~!!.CA~ OF COH1RACfIOAIlERHO. DE-ACOS-060R23100 lOB. DATED (Ull "

117

Comparison of Chloroflexus aurantiacus strain J-10-fl proteomes of cells grown chemoheterotrophically and photoheterotrophically  

SciTech Connect (OSTI)

Chloroflexus aurantiacus J-10-fl is a thermophilic green bacterium, a filamentous anoxygenic phototroph, and the model organism of the phylum Chloroflexi. We applied high-throughput, liquid chromatography-mass spectrometry in a global quantitative proteomics investigation of C. aurantiacus cells grown under oxic (chemoorganoheterotrophically) and anoxic (photoorganoheterotrophically) redox states. Our global analysis identified 13,524 high-confidence peptides that matched to 1,286 annotated proteins, 242 of which were either uniquely identified or significantly increased in abundance under anoxic culture conditions. Fifty-three of the 242 proteins are previously characterized photosynthesis-related proteins, including chlorosome proteins, proteins involved in the bacteriochlorophyll biosynthesis, 3-hydroxypropionate (3-OHP) CO2 fixation pathway, and components of electron transport chains. The remaining 190 proteins have not previously been reported. Of these, five proteins were found to be encoded by genes from a novel operon and observed only in photoheterotrophically grown cells. These proteins candidates may prove useful in further deciphering the phototrophic physiology of C. aurantiacus and other filamentous anoxygenic phototrophs.

Cao, Li; Bryant, Donald A.; Schepmoes, Athena A.; Vogl, Kajetan; Smith, Richard D.; Lipton, Mary S.; Callister, Stephen J.

2012-01-17T23:59:59.000Z

118

Simulation of an Ar/NH{sub 3} low pressure magnetized direct current discharge  

SciTech Connect (OSTI)

A two-dimensional fluid model has been used to investigate the properties of plasma in an Ar/NH{sub 3} low pressure magnetized direct current discharge. We compared the simulation results with the theoretical and experimental results of the other gas discharge in which the magnetic field is considered. Results that obtained using this method are in good agreement with literature. The simulation results show that the positive ammonia ion density follows the positive argon ion density. The Ar{sub 2}{sup +} density is slightly higher than the Ar{sup +} density at 100 mTorr. The largest ammonia ion is NH{sub 3}{sup +} ion, followed by NH{sub 2}{sup +}, NH{sub 4}{sup +}, and NH{sup +} ions. The contribution of NH{sup +} ions to the density of the positive ammonia ions is marginal. The influence of pressure on the plasma discharge has been studied by simulation, and the mechanisms have been discussed. The average plasma density increases as pressure increased. The plasma density appears to be more inhomogeneous than that at the lower pressure. The ratio of charge particles changed as pressure increased. The Ar{sup +} density is slightly higher than the Ar{sub 2}{sup +} density as the pressure increased. It makes NH{sub 4}{sup +} ratio increase as pressure increased. It shows that the electron temperature drops with rising pressure by numerical calculation.

Li Zhi [School of Science, University of Science and Technology Liaoning, Anshan 114051 (China); School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024 (China); Zhao Zhen [School of Chemistry and Life Science, Anshan Normal University, Anshan 114007 (China); School of Chemical Engineering, University of Science and Technology Liaoning, Anshan 114051 (China); Li Xuehui [Physiccal Science and Technical College, Dalian University, Dalian 116622 (China)

2013-01-15T23:59:59.000Z

119

Global distributions, time series and error characterization of atmospheric ammonia (NH[subscript 3]) from IASI satellite observations  

E-Print Network [OSTI]

Ammonia (NH[subscript 3]) emissions in the atmosphere have increased substantially over the past decades, largely because of intensive livestock production and use of fertilizers. As a short-lived species, NH[subscript 3] ...

Van Damme, M.

120

US. DEPARTMENT OF ENERGY EE RE PROJ ECT MANAGEMENT CENTER NEPA DE'l'flU..nNATION  

Broader source: Energy.gov (indexed) [DOE]

!. !. US. DEPARTMENT OF ENERGY EE RE PROJ ECT MANAGEMENT CENTER NEPA DE'l'flU..nNATION Page 1 of2 RECIPIENT:Pineitas County Board of County Commissioners STATE: Fl PROJEc.T TITLE: Clearwater Campus District Cooling - Activity 3 Geothermal Test Bores Funding Opportunity Announ~ement Number DE-FOA-OOOOO13-000002 Procurement Instrument Number DE -EEOOOO795.003 NEPA Control Number GF0-0000795-003 cm Number G0795 Based on my review of the information ~oncerning the propos~ action, as NE PA Compliance Officer (authorized under DOE Order 451.IA), I have made t he following determination: ex, EA, [IS APPENDIX AND NUMBER: Description: 8 3. 1 Site characterizatio n .n. en vironmental monit oring A9 Information gathering, analysis, and

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121

MISE EN VIDENCE D'UN ORDRE A COURTE DISTANCE DANS LA PHASE II DES CRISTAUX DE NH4Cl,  

E-Print Network [OSTI]

respectivement au point tricritique et au point de transition phase II - phase IV pour les cristaux de NH4Cl. Phase IV : phase cubique ordonn茅e ; tous les ions NH4 sont dans la configuration 1. Phase II : phase configuration 2. Phase III : phase t茅tragonale ordonn茅e ; les ions NH4 sont alternativement dans la

Boyer, Edmond

122

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

123

High Efficiency Large Area AlGaAs/GaAs Concentrator Solar Cells  

Science Journals Connector (OSTI)

A 1-kWp ( peak at 100 mw/cm2 incident power dencity ) concentrating photovoltaic array with 180 square Presnel plastic lenses and AlGaAs/GaAs concentrator solar cells has been constructed. The AlGaAs/GaAs concetr...

S. Yoshida; K. Mitsui; T. Oda; Y. Yukimoto

1981-01-01T23:59:59.000Z

124

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response  

E-Print Network [OSTI]

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 27 infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

Jalali. Bahram

125

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network [OSTI]

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

126

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

127

Consequences of Substituting 2NH2A for a in Synthetic DNA扴  

Science Journals Connector (OSTI)

Chemical and spectroscopic consequences of replacing A with 2NH2A have been examined in a variety of synthetic DNA抯. This substitution, which permits formation...m elevation, however, is much smaller in the deox...

Frank B. Howard; H. Todd Miles

1983-01-01T23:59:59.000Z

128

NH3 generation over commercial Three-Way Catalysts and Lean-NOx...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

formulations and operation for the in-situ generation of NH3, storage on a downstream SCR catalyst, and utilized to reduce the remaining NOx deer12toops.pdf More Documents &...

129

GaAs朾ased quantum cascade lasers  

Science Journals Connector (OSTI)

...N. Murdin GaAs-based quantum cascade lasers Sirtori H. Page C. Becker...state-of-the-art of GaAs-based quantum cascade lasers. These new light sources...2000.0739 GaAs-based quantum cascade lasers By C. Sirtori, H. Page...

2001-01-01T23:59:59.000Z

130

Volume 130, number 6 CHEMICAL PHYSICS LETTERS 24 October1986 VIBRATIONAL DEPENDENCE OF THE NH,+ (v2)+NO AND NO+(v) +NH,  

E-Print Network [OSTI]

Volume 130, number 6 CHEMICAL PHYSICS LETTERS 24 October1986 VIBRATIONAL DEPENDENCE OF THE NH,+ (v2 of an electron by the ion as it passes by its neutral collision partner. Such so-called charge transfer reactions reactions would suggest a fast rate controlled by the Langevin capture cross section [ 61. This in turn

Zare, Richard N.

131

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

132

Word Pro - Untitled1  

Gasoline and Diesel Fuel Update (EIA)

Annual Energy Review 2011 TX CA FL LA IL OH PA NY GA IN MI NC VA NJ TN WA KY AL MO MN WI SC OK CO IA MD AZ MA MS KS AR OR NE UT CT WV NM NV AK WY ID ND ME MT SD NH HI...

133

U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

Supply Model Regions Atlantic WA MT WY ID NV UT CO AZ NM TX OK IA KS MO IL IN KY TN MS AL FL GA SC NC WV PA NJ MD DE NY CT ME RI MA NH VA WI MI OH NE SD MN ND AR LA OR CA VT...

134

F-7 U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

2014 Regional maps Figure F6. Coal supply regions WA ID OR CA NV UT TX OK AR MO LA MS AL GA FL TN SC NC KY VA WV WY CO SD ND MI MN WI IL IN OH MD PA NJ DE CT MA NH VT NY ME RI...

135

F-5 U.S. Energy Information Administration | Annual Energy Outlook...  

Gasoline and Diesel Fuel Update (EIA)

Supply Model Regions Atlantic WA MT WY ID NV UT CO AZ NM TX OK IA KS MO IL IN KY TN MS AL FL GA SC NC WV PA NJ MD DE NY CT ME RI MA NH VA WI MI OH NE SD MN ND AR LA OR CA VT...

136

U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

East North Central Mountain AK WA MT WY ID NV UT CO AZ NM TX OK IA KS MO IL IN KY TN MS AL FL GA SC NC WV PA NJ MD DE NY CT VT ME RI MA NH VA WI MI OH NE SD MN ND AR LA OR CA HI...

137

U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

2013 Regional maps Figure F6. Coal supply regions WA ID OR CA NV UT TX OK AR MO LA MS AL GA FL TN SC NC KY VA WV WY CO SD ND MI MN WI IL IN OH MD PA NJ DE CT MA NH VT NY ME RI...

138

padd map  

U.S. Energy Information Administration (EIA) Indexed Site

for Defense Districts AK HI WA OR CA NV AZ MT WY CO UT ID ND SD NE KS OK MO MN WI MI IL IN OH KY TN IA NM TX AR LA AL MS WV VA NC SC GA FL ME NH VT NY PA NJ MD DE MA CT RI...

139

U.S. Energy Information Administration | Annual Energy Outlook...  

Gasoline and Diesel Fuel Update (EIA)

2012 Regional maps Figure F6. Coal supply regions WA ID OR CA NV UT TX OK AR MO LA MS AL GA FL TN SC NC KY VA WV WY CO SD ND MI MN WI IL IN OH MD PA NJ DE CT MA NH VT NY ME RI...

140

Microsoft Word - figure_99.doc  

Gasoline and Diesel Fuel Update (EIA)

Liquids Production." IN OH TN WV VA KY MD PA NY VT NH MA CT ME RI DE DC NC SC GA FL NJ AL MS LA MO AR TX NM OK CO KS UT AZ WY NE IL IA MN WI ND SD ID MT WA OR NV CA HI AK MI Gulf...

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

U.S. Energy Information Administration | Annual Energy Outlook...  

Gasoline and Diesel Fuel Update (EIA)

AZ OR CA HI V MT WY ID UT CO IV OK IA KS MO IL IN KY TN WI MI OH NE SD MN ND II NM TX MS AL AR LA III NJ CT VT ME RI MA NH FL GA SC NC WV MD DE VA NY PA I PAD District I - East...

142

Coulomb excitation of 73Ga  

E-Print Network [OSTI]

The B(E2; Ii -> If) values for transitions in 71Ga and 73Ga were deduced from a Coulomb excitation experiment at the safe energy of 2.95 MeV/nucleon using post-accelerated beams of 71,73Ga at the REX-ISOLDE on-line isotope mass separator facility. The emitted gamma rays were detected by the MINIBALL-detector array and B(E2; Ii->If) values were obtained from the yields normalized to the known strength of the 2+ -> 0+ transition in the 120Sn target. The comparison of these new results with the data of less neutron-rich gallium isotopes shows a shift of the E2 collectivity towards lower excitation energy when adding neutrons beyond N = 40. This supports conclusions from previous studies of the gallium isotopes which indicated a structural change in this isotopical chain between N = 40 and N = 42. Combined with recent measurements from collinear laser spectroscopy showing a 1/2- spin and parity for the ground state, the extracted results revealed evidence for a 1/2-; 3/2- doublet near the ground state in 73 31Ga42 differing by at most 0.8 keV in energy.

J. Diriken; I. Stefanescu; D. Balabanski; N. Blasi; A. Blazhev; N. Bree; J. Cederk鋖l; T. E. Cocolios; T. Davinson; J. Eberth; A. Ekstr鰉; D. V. Fedorov; V. N. Fedosseev; L. M. Fraile; S. Franchoo; G. Georgiev; K. Gladnishki; M. Huyse; O. V. Ivanov; V. S. Ivanov; J. Iwanicki; J. Jolie; T. Konstantinopoulos; Th. Kr鰈l; R. Kr點ken; U. K鰏ter; A. Lagoyannis; G. Lo Bianco; P. Maierbeck; B. A. Marsh; P. Napiorkowski; N. Patronis; D. Pauwels; P. Reiter; M. Seliverstov; G. Sletten; J. Van de Walle; P. Van Duppen; D. Voulot; W. B. Walters; N. Warr; F. Wenander; K. Wrzosek

2010-10-13T23:59:59.000Z

143

Addition of NH{sub 3} to Al{sub 3}O{sub 3}{sup -}  

SciTech Connect (OSTI)

Recent computational studies on the addition of ammonia (NH{sub 3}) to the Al{sub 3}O{sub 3}{sup -} cluster anion [A. Guevara-Garcia, A. Martinez, and J. V. Ortiz, J. Chem. Phys. 122, 214309 (2005)] have motivated experimental and additional computational studies, reported here. Al{sub 3}O{sub 3}{sup -} is observed to react with a single NH{sub 3} molecule to form the Al{sub 3}O{sub 3}NH{sub 3}{sup -} ion in mass spectrometric studies. This is in contrast to similarly performed studies with water, in which the Al{sub 3}O{sub 5}H{sub 4}{sup -} product was highly favored. However, the anion PE spectrum of the ammoniated species is very similar to that of Al{sub 3}O{sub 4}H{sub 2}{sup -}. The adiabatic electron affinity of Al{sub 3}O{sub 3}NH{sub 3} is determined to be 2.35(5) eV. Based on comparison between the spectra and calculated electron affinities, it appears that NH{sub 3} adds dissociatively to Al{sub 3}O{sub 3}{sup -}, suggesting that the time for the Al{sub 3}O{sub 3}{sup -}{center_dot}NH{sub 3} complex to either overcome or tunnel through the barrier to proton transfer (which is higher for NH{sub 3} than for water) is short relative to the time for collisional cooling in the experiment.

Wyrwas, Richard B.; Jarrold, Caroline Chick; Das, Ujjal; Raghavachari, Krishnan [Indiana University, Department of Chemistry, Bloomington, Indiana 47405-7102 (United States)

2006-05-28T23:59:59.000Z

144

Charakterisierung und Pr鋚aration von GaN und Herstellung von In-Plane-Gate Transistoren in AlxGa1-xN/GaN Heterostrukturen.  

E-Print Network [OSTI]

??Gegenstand der Arbeit sind GaN-Volumenmaterial und AlxGa1-xN/GaN HEMTs (high electron mobility transistor), welche ein zweidimensionales Elektronengas (2DEG) besitzen. Die Materialien wurden durch elektrische Messungen, insbesondere (more)

Ebbers, Andr

2003-01-01T23:59:59.000Z

145

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect (OSTI)

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

146

A Nonparametrized Ab Initio Determination of the Heat of Formation of Hydroxylamine, NH2OH  

SciTech Connect (OSTI)

Large basis set coupled cluster calculations through noniterative triple excitations were used to compute optimized structures, harmonic vibrational frequencies, atomization energies at 0 K and heats of formation at 298 K for hydroxylamine (NH2OH) and three related compounds (NH3, HNO and H2O2). The use of basis sets as large as augmented sextuple zeta resulted in small extrapolations to the complete basis set limit in order to achieve chemical accuracy ( 1 kcal/mol) in the thermodynamic properties. Complete basis set estimates were determined from several simple extrapolation formulas. In addition, four other corrections were applied to the frozen core atomization energies, (1) a zero point vibrational correction: (2) a core/valence correlation correction; (3) a Douglas-Kroll-Hess scalar relativistic correction; and (4) a first order atomic spin-orbit correction. For NH3 and HNO we incorporated a fifth correction term intended to approximate the difference between coupled cluster theory and the full configuration interact result. This correction was based on coupled cluster theory through iterative quadruple excitations (CCSDTQ). Excellent agreement with experiment was found for the heats of formation of NH3, HNO and H2O2. For NH2OH the best current estimate of the heat of formation at 298 K is 10.1 0.3 kcal/mol, which falls roughly midway between two experimental values at 12.0 2.4 and 7.9 1.5 kcal/mol.

Feller, David F.; Dixon, David A.

2003-12-04T23:59:59.000Z

147

Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys  

Science Journals Connector (OSTI)

Using large (512-atom) pseudopotential supercell calculations, we have investigated the composition dependence of the momentum matrix element Mv,c for transitions between the valence-band maximum and the conduction-band minimum of three semiconductor alloys:?GaP1-xNx and GaAs1-xNx, exhibiting large chemical and size differences between their alloyed elements, and GaP1-xAsx, which is a weakly perturbed alloy. In the composition ranges where these alloys have a direct band gap, we find that (i) in GaP1-xAsx, Mv,c is large (like the virtual-crystal value) and nearly composition independent; (ii) in GaAs1-xNx, Mv,c is strongly composition dependent: large for small x and small for large x; and (iii) in GaP1-xNx, Mv,c is only slightly composition dependent and is significantly reduced relative to the virtual-crystal value. The different behavior of GaP1-xAsx, GaP1-xNx, and GaAs1-xNx is traced to the existence/absence of impurity levels at the dilute alloy limits: (a) there are no gap-level impurity states at the x?1 or x?0 limits of GaP1-xAsx, (b) an isolated As impurity in GaN (GaN?:As) has a deep band gap impurity level but no deep impurity state is found for N in GaAs, and (c) GaN?:P exhibits a P-localized deep band-gap impurity state and GaP?:N has an N-localized resonant state. The existence of deep levels leads to wave-function localization in real space, thus to a spectral spread in momentum space and to a reduction of Mv,c. These impurity levels are facilitated by atomic relaxations, as evident by the fact that unrelaxed GaN?:As and GaN?:P, show no deep levels, have extended wave functions, and have large interband transition elements.

L. Bellaiche; Su-Huai Wei; Alex Zunger

1997-10-15T23:59:59.000Z

148

Grants to Help N.H. Towns Conserve Energy | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Grants to Help N.H. Towns Conserve Energy Grants to Help N.H. Towns Conserve Energy Grants to Help N.H. Towns Conserve Energy March 19, 2010 - 4:17pm Addthis New Hampshire has a plan to lower expenses and create jobs, all while conserving energy. In all, the state has received $17.3 million in Energy Efficiency and Conservation Block Grant (EECBG) funding. Of that, $9.6 million has been sent to the New Hampshire Office of Energy and Planning (NHOEP) to launch several energy saving projects. NHOEP established a subgrant program to award $6.6 million of the EECBG grant funding to local municipalities and counties. New Hampshire municipalities and counties submitted over 270 applications, totaling over $21 million in grant requests. "Substantial energy efficiency improvements will be made throughout the

149

Grants to Help N.H. Towns Conserve Energy | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Grants to Help N.H. Towns Conserve Energy Grants to Help N.H. Towns Conserve Energy Grants to Help N.H. Towns Conserve Energy March 19, 2010 - 4:17pm Addthis New Hampshire has a plan to lower expenses and create jobs, all while conserving energy. In all, the state has received $17.3 million in Energy Efficiency and Conservation Block Grant (EECBG) funding. Of that, $9.6 million has been sent to the New Hampshire Office of Energy and Planning (NHOEP) to launch several energy saving projects. NHOEP established a subgrant program to award $6.6 million of the EECBG grant funding to local municipalities and counties. New Hampshire municipalities and counties submitted over 270 applications, totaling over $21 million in grant requests. "Substantial energy efficiency improvements will be made throughout the

150

A Review & Assessment of Current Operating Conditions Allowable Stresses in ASME Section III Subsection NH  

SciTech Connect (OSTI)

The current operating condition allowable stresses provided in ASME Section III, Subsection NH were reviewed for consistency with the criteria used to establish the stress allowables and with the allowable stresses provided in ASME Section II, Part D. It was found that the S{sub o} values in ASME III-NH were consistent with the S values in ASME IID for the five materials of interest. However, it was found that 0.80 S{sub r} was less than S{sub o} for some temperatures for four of the materials. Only values for alloy 800H appeared to be consistent with the criteria on which S{sub o} values are established. With the intent of undertaking a more detailed evaluation of issues related to the allowable stresses in ASME III-NH, the availabilities of databases for the five materials were reviewed and augmented databases were assembled.

R. W. Swindeman

2009-12-14T23:59:59.000Z

151

Superionicity in the hydrogen storage material Li2NH: Molecular dynamics simulations  

Science Journals Connector (OSTI)

We have employed ab initio molecular dynamics simulations in an attempt to study a temperature-induced order-disorder structural phase transformation that occurs in Li2NH at about 385 K. A structural phase transition was observed by us in the temperature range 300400 K, in good agreement with experiment. This transition is associated with a melting of the cation sublattice (Li+), giving rise to a superionic phase, which in turn is accompanied by an order-disorder transition of the N-H bond orientation. The results obtained here can contribute to a better understanding of the hydrogen storage reactions involving Li2NH and furthermore broaden its possible technological applications toward batteries and fuel cells.

C. Moys閟 Ara鷍o; Andreas Blomqvist; Ralph H. Scheicher; Ping Chen; Rajeev Ahuja

2009-05-08T23:59:59.000Z

152

Efficient chemical regeneration of LiBH4NH3 spent fuel for hydrogen storage  

Science Journals Connector (OSTI)

Abstract The absence of an efficient method for the regeneration of ammine metal borohydrides (M(BH4)nxNH3, AMBs) from their dehydrogenated products has hindered their potential application as hydrogen storage materials. In this paper, we demonstrate a high-yield chemical regeneration of LiBH4NH3 based on a three step process (digestion (H+ addition), reduction (H? addition), and ammonia complexation) at ambient temperature. Our results demonstrated that Li朆朜 polymer was digested by methanol to form LiB(OCH3)4, which can be converted into LiBH4 by using LiAlH4 in the reduction process. The generation of LiBH4NH3 in ammonia complexion step was achieved by exposing the obtained LiBH4 in an ammonia atmosphere.

Yingbin Tan; Xiaowei Chen; Guanglin Xia; Xuebin Yu

2014-01-01T23:59:59.000Z

153

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

154

Polymorphism and optical properties in [NH{sub 4}][InSe{sub 2}  

SciTech Connect (OSTI)

The solvothermal synthesis and characterization of two indium selenides with stoichiometry [NH{sub 4}][InSe{sub 2}] is described. Yellow [NH{sub 4}][InSe{sub 2}] (1), which exhibits a layered structure, was initially prepared in an aqueous solution of trans-1,4-diaminocyclohexane, and subsequently using a concentrated ammonia solution. A red polymorph of one-dimensional character, [NH{sub 4}][InSe{sub 2}] (2), was obtained using 3,5-dimethylpyridine as solvent. [NH{sub 4}][InSe{sub 2}] (1) crystallizes in the non-centrosymmetric space group Cc (a=11.5147(6), b=11.3242(6), c=15.9969(9) and ?=100.354(3)). The structural motif of the layers is the In{sub 4}Se{sub 10} adamantane unit, composed of four corner-linked InSe{sub 4} tetrahedra. These units are linked by their corners, forming [InSe{sub 2}]{sup ?} layers which are stacked back to back along the c-direction, and interspaced by [NH{sub 4}]{sup +}cations. The one-dimensional polymorph, (2), crystallizes in the tetragonal space group, I4/mcm (a=8.2519(16), c=6.9059 (14) ). This structure contains infinite chains of edge-sharing InSe{sub 4} tetrahedra separated by [NH{sub 4}]{sup +} cations. - Graphical abstract: Two polymorphic forms of [NH{sub 4}][InSe{sub 2}], which are yellow and red, have been prepared and their optical properties investigated. Highlights: Two new indium selenides prepared by a solvothermal method. Depending on synthesis conditions, two polymorphic forms of [NH{sub 4}][InSe{sub 2}] prepared. Layered polymorph contains In{sub 4}Se{sub 10} adamantane clusters, linked by their corners. One-dimensional polymorph contains [InSe{sub 2}]{sup ?} chains of edge-sharing tetrahedra. Non-centrosymmetric layered polymorph shows a second harmonic generation response.

Ewing, Sarah J. [Institute of Chemical Sciences, Heriot-Watt University, Edinburgh, Scotland EH14 4AS (United Kingdom); Woodward, David I. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Powell, Anthony V. [Institute of Chemical Sciences, Heriot-Watt University, Edinburgh, Scotland EH14 4AS (United Kingdom); Vaqueiro, Paz, E-mail: P.Vaqueiro-Rodriguez@hw.ac.uk [Institute of Chemical Sciences, Heriot-Watt University, Edinburgh, Scotland EH14 4AS (United Kingdom)

2013-08-15T23:59:59.000Z

155

Measurement of Hyperfine Structure in the Infrared Rotation-Vibration Spectrum of NH-  

Science Journals Connector (OSTI)

Hyperfine structure (hfs) has been observed in the P, Q, and R branches of the fundamental rotation-vibration spectrum of the X?2 electronic state of the molecular anion NH-. A coaxial ion-beam-laser-beam spectrometer is employed in which rotation-vibration transitions are induced by a color-center laser operating near 3000 cm-1. The vibrationally excited ions autodetach, and the fast neutral NH is detected. The structure has been analyzed and the magnetic dipole hfs parameters obtained in both N14H- and N15H-. This is the first analyzed case of hfs in any molecular anion.

Harold C. Miller; Mohammad Al-Za'al; John W. Farley

1987-05-18T23:59:59.000Z

156

Princeton Plasma Physics Lab - General Atomics (GA)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
157

Vol. 92 Concord, NH, Wednesday, November 6, 2013 No. 37 Weekly Market Bulletin  

E-Print Network [OSTI]

to recruit new members and future customers for the full-service cooperative grocery store the group plans sustainability. The cooperative- ly owned business "strives to serve the North Country of New HampshireVol. 92 Concord, NH, Wednesday, November 6, 2013 No. 37 Weekly Market Bulletin State of New

New Hampshire, University of

158

Progress on Acidic Zirconia Mixed Oxides for Efficient NH3-SCR...  

Broader source: Energy.gov (indexed) [DOE]

levels 10 PSI laboratory test apparatus Computer FIC FIC FIC FIC FIC N 2 O 2 NO NH 3 TIC TIC TI MCT Detector TI TIC N 2 TI IR Source 2 3 4 3 3 3 5 6 7 8 9 10 heated gas line...

159

March 2012 GIS Workshops in Concord, NH SPACE IS LIMITED -PRE-REGISTRATION IS REQUIRED  

E-Print Network [OSTI]

March 2012 GIS Workshops in Concord, NH SPACE IS LIMITED - PRE-REGISTRATION IS REQUIRED. phone: 603.862.1029 web: http://gisworkshops.org email: gis@unh.edu GIS 101: Learning to Map in the Digital Age March 27th, 9am to noon Topics covered: basic GIS concepts types of GIS data types of GIS

New Hampshire, University of

160

May 2012 GIS Workshops in Plymouth, NH SPACE IS LIMITED -PRE-REGISTRATION IS REQUIRED  

E-Print Network [OSTI]

May 2012 GIS Workshops in Plymouth, NH SPACE IS LIMITED - PRE-REGISTRATION IS REQUIRED Registration. phone: 603.862.1029 web: http://gisworkshops.org email: gis@unh.edu GIS 101: Learning to Map in the Digital Age May 10, 9am to noon Topics covered: basic GIS concepts types of GIS data types of GIS software

New Hampshire, University of

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

April 2012 GIS Workshops in Conway, NH SPACE IS LIMITED -PRE-REGISTRATION IS REQUIRED  

E-Print Network [OSTI]

April 2012 GIS Workshops in Conway, NH SPACE IS LIMITED - PRE-REGISTRATION IS REQUIRED Registration.862.1029 web: http://gisworkshops.org email: gis@unh.edu GIS 101: Learning to Map in the Digital Age April 18, 9am to noon Topics covered: basic GIS concepts types of GIS data types of GIS software $49 Skill

New Hampshire, University of

162

January 2012 GIS Workshops in Durham, NH SPACE IS LIMITED -PRE-REGISTRATION IS REQUIRED  

E-Print Network [OSTI]

January 2012 GIS Workshops in Durham, NH SPACE IS LIMITED - PRE-REGISTRATION IS REQUIRED.862.1029 web: http://gisworkshops.org email: gis@unh.edu GIS 101: Learning to Map in the Digital Age January 10th, 9am to noon Topics covered: basic GIS concepts types of GIS data types of GIS software $49 Skill

New Hampshire, University of

163

June 2013 GIS Workshops in Plymouth, NH SPACE IS LIMITED -PRE-REGISTRATION IS REQUIRED  

E-Print Network [OSTI]

June 2013 GIS Workshops in Plymouth, NH SPACE IS LIMITED - PRE-REGISTRATION IS REQUIRED. phone: 603.862.1029 web: http://gisworkshops.org email: gis@unh.edu Presented at the Whole Village: Participants learn the basics of Geographic Information System (GIS) mapping software and explore a variety

New Hampshire, University of

164

Intramolecular electron transfer in mixed-valence complexes [(NH3)5Ru-L-Ru(NH3)5]5+ (L = N2, pyz, pym, 4,4?-bipy, bpa)  

Science Journals Connector (OSTI)

The dynamics of the intramolecular electron transfer from Ru(II) to Ru(III) in binuclear mixedvalence complexes [(NH3)5Ru-L- Ru(NH3)5]5+ (L = N2,pyz, bipy, pym, bpa) is analyzed by the semiempirical CINDO +...

O. V. Sizova; V. I. Baranovskii; A. I. Panin

165

Intramolecular electron transfer in mixed-valence complexes [(NH3)5Ru-L-Ru(NH3)5]5+ (L = N2, pyz, pym, 4,4-bipy, bpa)  

Science Journals Connector (OSTI)

The dynamics of the intramolecular electron transfer from Ru(II) to Ru(III) in binuclear mixed-valence complexes [NH3)5Ru -L-Ru(NH3)5]5+ (L = N2, pyz, bipy, pym, bpa) is analyzed by the semiempiri...

O. V. Sizova; V. I. Baranovskii; A. I. Panin

2002-02-01T23:59:59.000Z

166

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

167

Structural and optical properties of InGaN朑aN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre J黮ich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre J黮ich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre J黮ich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre J黮ich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre J黮ich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

168

Presented in Concord, Merrimack and West Lebanon, NH by the UNHCE Geospatial Outreach Program ArcGIS Workshops Fall 2012  

E-Print Network [OSTI]

Drivers Permit 10 1-day, 9am to 4pm To be announced Topics covered: ArcGIS 10 Exploring GIS maps Basic GIS Lebanon, NH December 4-6, Merrimack, NH Topics covered: ArcGIS 10 Creating GIS maps GIS techniques GIS and applications, participants learn how to use ArcGIS 10 to produce effective maps, edit and create GIS data

New Hampshire, University of

169

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network [OSTI]

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

170

CHNG 5 CHNG TRNH KHI PHC SM XUT: PHT TRIN V NH GI CC GII PHP ...............................................................................................................................................................1  

E-Print Network [OSTI]

Lng M么i Trng(CEQ) v vic thc hin Ch铆nh S谩ch Lut M么i Trng Quc Gia (NEPA) cng hng dn c谩c t chc nghi锚n cu hp l媒 nu 谩p ng c mc ti锚u v脿 y锚u cu ra, kh么i phc hoc l脿m tng cht lng m么i trng nh芒n sinh, v脿 ph貌ng tr谩nh hoc gim thiu c谩c hiu ng ti锚u cc t h脿nh ng ca c谩c t chc ti cht lng m么i trng nh芒n sinh (40 C

171

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

172

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

173

40th Joint Propulsion Conference, Fort Lauderdale, FL, July 11-14, 2004 Effect of Segmented Anodes On the Beam Profile of a  

E-Print Network [OSTI]

40th Joint Propulsion Conference, Fort Lauderdale, FL, July 11-14, 2004 Effect of Segmented Anodes was investigated. A BPT-2000 magnetic circuit was retrofitted with a segmented anode with thermal measurement capabilities. Current was shared between shims and main anode by changing the voltage on the shim. A Faraday

King, Lyon B.

174

Zarillo, G. A., and Brehin, F. G. A. 2007. Hydrodynamic and Morphologic Modeling at Sebastian Inlet, FL. Proceedings Coastal Sediments '07 Conference, ASCE Press, Reston,  

E-Print Network [OSTI]

Inlet, FL. Proceedings Coastal Sediments '07 Conference, ASCE Press, Reston, VA, 1297-1310. HYDRODYNAMIC Modeling System (CMS) to investigate the morphological response to time varying forcing, sediment texture evolution of tidal inlet shoals is an important management tool, since they control sediment budgets. Inlet

US Army Corps of Engineers

175

de dimensions diffrentes, l'unit lumineuse n'exigeai t que 3oo fl ergs, et dans l'arc voltaque l'unit de lumire correspond  

E-Print Network [OSTI]

pr茅c茅dente. C. DAGUENET. A. MACFARLANE. 2014 The disruptive discharge of electricity (D茅charge disruptive. MACFARLANE and P.-M. PLAYFAIR. 2014 On the disruptive discharge of electricity through liquid dielectriesI38 de dimensions diff茅rentes, l'unit茅 lumineuse n'exigeai t que 3oo fl ergs, et dans l'arc

Paris-Sud XI, Universit茅 de

176

FY 2013 Small Business Awards Bestowed on 12 Companies at DOE's 2014 Small Business Forum & Expo, Tampa FL, June 12, 2014  

Broader source: Energy.gov [DOE]

The U.S. Department of Energy's (DOE) Office of Small and Disadvantaged Business Utilization presented 12 companies with awards at their annual Small Business Forum & Expo, held this year in Tampa, FL, from June 10-12, 2014. Awards were presented by DOE's Chief of Staff Kevin Knobloch and OSDBU Director John Hale III.

177

General Working Principles of CH3NH3PbX3 Perovskite Solar Cells  

Science Journals Connector (OSTI)

General Working Principles of CH3NH3PbX3 Perovskite Solar Cells ... Organometal halide perovskite-based solar cells have recently realized large conversion efficiency over 15% showing great promise for a new large scale cost-competitive photovoltaic technology. ... Using impedance spectroscopy measurements we are able to separate the physical parameters of carrier transport and recombination in working devices of the two principal morphologies and compositions of perovskite solar cells, viz. ...

Victoria Gonzalez-Pedro; Emilio J. Juarez-Perez; Waode-Sukmawati Arsyad; Eva M. Barea; Francisco Fabregat-Santiago; Ivan Mora-Sero; Juan Bisquert

2014-01-07T23:59:59.000Z

178

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network [OSTI]

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

179

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

180

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect (OSTI)

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

182

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect (OSTI)

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

183

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect (OSTI)

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

184

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203掳, -3.705774掳 Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

185

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction  

Science Journals Connector (OSTI)

We report a nondestructive large-area method to characterize dislocation formation at a highly lattice-mismatched interface. The analysis is based on x-ray diffraction and reciprocal space mapping using a standard lab-based diffractometer. We use this technique to identify and analyze a two-dimensional array of 90 misfit dislocations at a GaSb/GaAs interface. The full width at half maximum of the GaSb 004 reciprocal lattice point is shown to decrease with increasing GaSb epilayer thickness as expected from theoretical models. Based on these measurements the variation in the spatial dislocation frequency is calculated to be 1%.

Charles J. Reyner; Jin Wang; Kalyan Nunna; Andrew Lin; Baolai Liang; Mark S. Goorsky; D. L. Huffaker

2011-01-01T23:59:59.000Z

186

Role of GaAs surface clearing in plasma deposition of silicon nitride films for encapsulated annealing  

SciTech Connect (OSTI)

The role of GaAs surface cleaning and plasma reactor cleaning prior to deposition of silicon nitride films for encapsulated annealing has been investigated. X-ray photoelectron spectroscopy was employed to determine the surface characteristics of GaAs treated with HCl, HF, and NH4OH solutions preceded by a degreasing procedure. The HCl clean left the least amount of oxygen on the surface. Fluorine contamination resulting from the CF4 plasma used to clean the reactor was found to be located at the film-substrate interface by Auger electron spectroscopy with argon-ion sputtering. A modified deposition procedure was developed to eliminate the fluorine contamination. Plasma deposition of silicon nitride encapsulating films was found to modify the I-V characteristics of Schottky diodes subsequently formed on GaAs surface. The reverse current of the diodes was slightly reduced. Substrates implanted with Si at 100 keV and a dose of 5 x 10 to the 12th/sq cm showed a peak electron concentration of 1.7 x 10 to the 17th/cu cm at a depth of 0.1-micron with 60 percent activation after encapsulation and annealing at 800 C for 7 min. 9 references.

Valco, G.J.; Kapoor, V.J.

1985-06-01T23:59:59.000Z

187

DETEW!INATION OF THE NEUTRON MAGNETIC FlONENT G.L. Greene and N.F. Ramsey  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

DETEW!INATION OF THE NEUTRON MAGNETIC FlONENT DETEW!INATION OF THE NEUTRON MAGNETIC FlONENT * G.L. Greene and N.F. Ramsey Harvard U n i v e r s i t y , Cambridge, N a s s a c h u s e t t s 02138 h W. Plampe i - I n s t i t u t Laue-Langevin, 38042 Grenoble, France' 9/ \ P J . M . P e n d l e b u r y and K. Smith " ' , \30ddb * A , 4 U n i v e r s i t y o f S u s s e x , Falmer, B r i g h t o n , B N I 9 Q H , U n i t e d Kingdom W . B . Dress and P.D. Miller -3 Oak Ridge N a t i o n a l L a b o r a t o r y , Oak Ridge, Tennessee 37838 P a u l P e r r i n C e n t r e d ' E t u d e s N u c l e a i r e s , 38042 C r e n o b l e , F r a n c e The n e u t r o n m a g n e t i c moment h a s been measured w i t h an improvement of a f a c t o r of 100 o v e r t h e p r e v i o u s b e s t measurement. s p e c t r o m e t e r o f t h e s e p a r a t e d o s c i l l a t o r y f i e l d t y p e c a p a b l e o f d e t e r m i n i n g a r e s o n a n c e s i g n a l f o r b o t h n e u t r o n s and p r o t o n s ( i n f l o w i n g H20), we f i n d u n / p p = 0.68497935(17)

188

GaN朓nGaN LED efficiency reduction from parasitic electron currents in p-GaN  

Science Journals Connector (OSTI)

Abstract This paper presents observations of a previously unidentified source of performance limitation for GaN朓nGaN LED devices. While most studies focus on output saturation known as 慶urrent droop from InGaN layer effects, we show an alike influence from p-type GaN抯 inherent background electron concentration. p-GaN material was investigated to confirm that, even though the material had an excess of holes, the background electrons were indeed present and were influencing the charge flow across device electrodes. This current does not cross LED heterojunctions but rather drifts toward its proximal device electrode, causing a source of heating while providing no carriers for light emitting recombination. The effects of this current were explored in an LED configuration, whose output showed weak efficiency at very low biases in addition to that from current droop. While the shortcoming under small currents has previously been attributed to electron tunneling across the junction, we propose that the background electrons inside p-GaN could be another explanation.

G. Togtema; V. Georgiev; D. Georgieva; R. Gergova; K.S.A. Butcher; D. Alexandrov

2015-01-01T23:59:59.000Z

189

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

190

Monolithically Peltier-cooled vertical-cavity surface-emitting lasers Paul FL Berger, Niloy K. Dutta, Kent D. Choquette, Ghulam Hasnain, and Naresh Chand  

E-Print Network [OSTI]

GaAs laser. Also, in a monolithically integrated thermo- electric cooled InGaAsP/InP laser diode, Dutta et ~1 temperature of f 7.5 "C has been achieved using f 100 mA of thermoelectric cooler current. The observed" thermoelectric cooler, or a mono- lithically integrated thermoelectric cooler. Hava et ~1.~ ob- served a 2 "C

191

Measurement and Modeling of Spatial NH3 Storage Distributions in a Commercial Small Port Cu Zeolite Urea SCR Catalyst  

Broader source: Energy.gov [DOE]

A modified Spaci-IR technique can measure transient NH3 and NOx concentrations; data have been used to calibrate and validate an SCR model, with good agreement between experiments and simulations.

192

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a  

E-Print Network [OSTI]

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a Anna Fontcuberta i Morral,b and Harry, Pasadena, California 91125 Daniel J. Aiken Emcore Photovoltaics, Albuquerque, New Mexico 87123 Mark W. Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 19 March 2006; accepted 26

Atwater, Harry

193

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

194

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect (OSTI)

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

195

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

196

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

197

211 Westcott Building, 222 S. Copeland Avenue, P.O. Box 3061480, Tallahassee, FL 32306-1480 Telephone 850.644.6876, Fax 850.644.3375 http://fda.fsu.edu  

E-Print Network [OSTI]

211 Westcott Building, 222 S. Copeland Avenue, P.O. Box 3061480, Tallahassee, FL 32306 in the Office of the Vice President for Faculty Development and Advancement in Westcott 115 by Monday, October 7

Sura, Philip

198

408 Westcott Building, Florida State University, P.O. Box 3061410, Tallahassee, FL 32306-1410 Telephone 850.644.3501 Fax 850.644.2969 www.gradschool.fsu.edu  

E-Print Network [OSTI]

408 Westcott Building, Florida State University, P.O. Box 3061410, Tallahassee, FL 32306 Westcott. Student deadline to departments is February 1, 2011. Folders for all nominees are due

Bowers, Philip L.

199

Diffusive and rotational dynamics of condensed n-H2 confined in MCM-41  

SciTech Connect (OSTI)

In this paper, we report an inelastic neutron scattering study of liquid and solid n-H2 confined within MCM-41. This is a high surface area, mesoporous silica glass with a narrow pore size distribution centered at 3.5 nm. The scattering data provides information about the diffusive and rotational dynamics of the adsorbed n-H2 at low temperatures. In the liquid state, the neutron scattering data demonstrates that only a fraction of the adsorbed o-H2 is mobile on the picosecond time scale. This mobile fraction undergoes liquid-like jump diffusion, and values for the residence time t and effective mean-squared displacement hu2i are reported as a function of pore filling. In the solid state, the rotational energy levels of adsorbed H2 are strongly perturbed from their free quantum rotor behavior in the bulk solid. The underlying orientational potential of the hindered rotors is due to the surface roughness and heterogeneity of the MCM-41 pore walls. This potential is compared to the hindering potential of other porous silicas, such as Vycor. Strong selective adsorption makes the interfacial layer rich in o-H2, leaving the inner core volume consisting of a depleted mixture of o-H2 and p-H2.

Prisk, Timothy R [ORNL; Bryan, Matthew [Indiana University; Sokol, Paul E [ORNL

2014-01-01T23:59:59.000Z

200

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network [OSTI]

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

202

GA-AL-SC | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

203

Low Efficiency Droop Green Nano-Pyramid {10 -11} InGaN/GaN Multiple Quantum Well LED  

Science Journals Connector (OSTI)

We report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {10 1} nano-pyramid facets. The device physics...

Cheng, Yuh-Jen; Chang, Shih-Pang; Lin, Da-Wei; Kuo, Hao-chung; Xiong, Kang-lin

204

InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting  

Science Journals Connector (OSTI)

Hydrogen generation through water splitting by n-InGaN working electrodes with bias generated from GaAs solar cell was studied. Instead of using an external bias provided by power...

Liu, Shu-Yen; Sheu, J K; Lin, Yu-Chuan; Chen, Yu-Tong; Tu, S J; Lee, M L; Lai, W C

2013-01-01T23:59:59.000Z

205

Reaktive Molekularstrahlepitaxie und Charakterisierung von GaN/(Al,Ga)N-Heterostrukturen auf SiC(0001).  

E-Print Network [OSTI]

??Thema dieser Arbeit ist die Synthese von hexagonalen GaN/(Al,Ga)N-Heterostrukturen mittels reaktiver Molekularstrahlepitaxie (MBE) auf SiC(0001)-Substraten. Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, optischen und (more)

Thamm, Andreas

2001-01-01T23:59:59.000Z

206

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

207

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

208

Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells.  

E-Print Network [OSTI]

??Thema dieser Arbeit ist die Synthese von Wurtzit M-plane (In,Ga)N(1-100)-Heterostrukturen auf g-LiAlO2(100) mittels plasmaunterst黷zter Molekularstrahlepitaxie (MBE). Der Einflu der Wachstumsbedingungen auf die strukturellen, morphologischen, und (more)

Sun, Yue-Jun

2004-01-01T23:59:59.000Z

209

Development of Polarized Electron Source of GaAs-AlGaAs Superlattice and Strained GaAs  

Science Journals Connector (OSTI)

At Nagoya University, we have continued the development of GaAs polarized electron source (PES) for several years. Our test ... a gun producing (15) KeV polarized electrons and a standard 100 KeV Mott polarimete...

T. Nakanishi; S. Nakamura

1991-01-01T23:59:59.000Z

210

Two-photon optical pumping of NH/sub 3/ in a multipass cell  

SciTech Connect (OSTI)

A multipass cell was used in optical pumping of ammonia molecules by CO/sub 2/ laser radiation. Several new lasing lines were observed in the case of two-photon optical pumping of the NH/sub 3/ molecule at wavelengths in the range 16--35 ..mu... The output power of the various lines was in the range 10--50 kW. The divergence of the resultant radiation was diffraction-limited. A theoretical study was made of the two-photon pumping process. A stable (on the frequency scale) maximum was found in the gain profile of the output radiation. It was concluded that it should be possible to increase the energy and extend the emission spectrum of an ammonia laser pumped by double-photon absorption.

Bobrovskii, A.N.; Kiselev, V.P.; Kozhevnikov, A.V.; Likhanskii, V.V.; Mishchenko, V.A.; Myl'nikov, G.D.

1983-11-01T23:59:59.000Z

211

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures  

SciTech Connect (OSTI)

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap E{sub g} and the spin orbit splitting energy ?{sub so}, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which ?{sub so},> E{sub g} occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.

Hild, K.; Batool, Z.; Jin, S. R.; Hossain, N.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Hosea, T. JC. [1 Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK and also, Ibnu Sina Institute, Universiti Teknologi Malaysia, Johor Bahru, 81310 (Malaysia); Lu, X. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6, Canada and now VarianSemiconductor Equipment Associates, Gloucester, MA 01930 (United States); Tiedje, T. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6 (Canada)

2013-12-04T23:59:59.000Z

212

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

213

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

214

Multiband GaNAsP Quaternary Alloys  

SciTech Connect (OSTI)

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

215

Implantation of carbon in GaAs  

SciTech Connect (OSTI)

Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.

Moll, A.J.

1992-03-01T23:59:59.000Z

216

O?[]O? nuclear ?-decay of ?Ga  

E-Print Network [OSTI]

The branching ratio for the ?-Decay of ?Ga to the first excited O? state in ?瞆n has been measured. It is possible to use this branching ratio to test the theoretical method of calculating the [] component of the charge correction term [], which...

Hyman, Bruce Carl

2012-06-07T23:59:59.000Z

217

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect (OSTI)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16 from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

218

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells  

SciTech Connect (OSTI)

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ar鑣, R. [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qu閎ec (Canada)] [Institut Interdisciplinaire d'Innovation Technologique (3IT), Universit de Sherbrooke, Sherbrooke, Qu閎ec (Canada); Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K. [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)] [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Fafard, S. [Cyrium Technologies Inc., Ottawa, ON (Canada)] [Cyrium Technologies Inc., Ottawa, ON (Canada)

2013-09-27T23:59:59.000Z

219

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

2013-11-25T23:59:59.000Z

220

Closed-loop control of a SCR system using a NOx sensor cross-sensitive to NH3  

E-Print Network [OSTI]

Closed-loop control of a SCR system using a NOx sensor cross-sensitive to NH3 A.Bonfils , Y. Creff for an automotive selective catalytic reduction (SCR) system, for which the feedback is based on a NOx sensor the variety of en- countered technologies, selective catalytic reduction (SCR) is one of the most appealing

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Adapted from laboratory protocols of the Center for Freshwater Biology, University of New Hampshire, Durham, N.H. 2010  

E-Print Network [OSTI]

, Durham, N.H. 2010 UNH CFB Protocol for the Monitoring of Cyanobacteria & Microcystins in Drinking Water delivery to UNH CFB lab. 5. Freeze the sample if delivery/ drop-off time exceeds 12 hours. Analyses: a, Quantiplate-ELISA Kit, (Portland, Me) with increased sensitivity (UNH, CFB). Results will be reported as ng

New Hampshire, University of

222

Effects of \\{NH4Cl\\} and MgCl2 on pretreatment and xylan hydrolysis of miscanthus straw  

Science Journals Connector (OSTI)

This study investigated the effects of \\{NH4Cl\\} and MgCl2 on pretreatment and xylan hydrolysis of miscanthus straw for biofuels production. It was observed that increasing the pretreatment temperature decreased the remaining solid, increased the enzymatic digestibility, and increased the xylan removal. When 0.25.0% \\{NH4Cl\\} and MgCl2 were employed in pretreatments, increasing the inorganic salt concentration slightly diminished the remaining solid, though the enzymatic digestibility was enhanced. Under the higher-than-2% condition, no xylan remained in the solid residues after pretreatment. With pretreatment time, the remaining solid slightly decreased, but the enzymatic digestibility was increased. Moreover, xylan removal was linearly increased to 15爉in, after which it was completely hydrolyzed. Overall, these results indicated that pretreatment by 2% \\{NH4Cl\\} or MgCl2 at 185牥C for 15爉in completely hydrolyzes the xylan of miscanthus straw. In scanning electron microscopy (SEM) images, the physical surface of the miscanthus straw showed an apparently damaged surface area and exposure of the internal structure after pretreatment with \\{NH4Cl\\} and MgCl2 by SEM.

Kyeong Eop Kang; Don-Hee Park; Gwi-Taek Jeong

2013-01-01T23:59:59.000Z

223

Coal ash as an absorbent to remove SO2, and its activity change in NO?NH3 reaction  

Science Journals Connector (OSTI)

After being activated with NaOH aqueous solution, coal ash showed a maximal sorption capacity of about...3 SO2/g ash. Catalytic activity of coal ash for the NO?NH3 reaction was gradually depressed by the presence...

F. Nozaki; O. Watanabe; T. Sodesawa

1984-01-01T23:59:59.000Z

224

Presented in Lee and Concord, NH by the UNHCE Geospatial Outreach Program ArcGIS Workshops Winter 2013  

E-Print Network [OSTI]

, 9am to 4pm January 17, 2013 Lee, NH Topics covered: ArcGIS 10.1 Exploring GIS maps Basic GIS: ArcGIS 10 Creating GIS maps.1 GIS techniques GIS data maintenance $495 standard, $349 reduced Skill.1 to produce effective maps, edit and create GIS data, as well as, conduct geospatial analysis. Participants

New Hampshire, University of

225

Infrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a  

E-Print Network [OSTI]

GaP single QW surrounded by AlGaInP waveguide WG and cladding layers, whereas the NIR laser incorporates a GaInfrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a Robert in GaAs-based broad-area laser diodes. Spectrally and spatially resolved scanning optical microscopy

Peinke, Joachim

226

Chemical analysis of HfO{sub 2}/Si (100) film systems exposed to NH{sub 3} thermal processing  

SciTech Connect (OSTI)

Nitrogen incorporation in HfO{sub 2}/SiO{sub 2} films utilized as high-k gate dielectric layers in advanced metal-oxide-semiconductor field effect transistors has been investigated. Thin HfO{sub 2} blanket films deposited by atomic layer deposition on either SiO{sub 2} or NH{sub 3} treated Si (100) substrates have been subjected to NH{sub 3} and N{sub 2} anneal processing. Several high resolution techniques including electron microscopy with electron energy loss spectra, grazing incidence x-ray diffraction, and synchrotron x-ray photoelectron spectroscopy have been utilized to elucidate chemical composition and crystalline structure differences between samples annealed in NH{sub 3} and N{sub 2} ambients as a function of temperature. Depth profiling of core level binding energy spectra has been obtained by using variable kinetic energy x-ray photoelectron spectroscopy with tunable photon energy. An 'interface effect' characterized by a shift of the Si{sup 4+} feature to lower binding energy at the HfO{sub 2}/SiO{sub 2} interface has been detected in the Si 1s spectra; however, no corresponding chemical state change has been observed in the Hf 4f spectra acquired over a broad range of electron take-off angles and surface sensitivities. The Si 2p spectra indicate Si-N bond formation beneath the HfO{sub 2} layer in the samples exposed to NH{sub 3} anneal. The NH{sub 3} anneal ambient is shown to produce a metastable Hf-N bond component corresponding to temperature driven dissociation kinetics. These findings are consistent with elemental profiles across the HfO{sub 2}/Si(100) interface determined by electron energy loss spectroscopy measurements. X-ray diffraction measurements on similarly treated films identify the structural changes resulting from N incorporation into the HfO{sub 2} films.

Lysaght, Patrick S.; Barnett, Joel; Bersuker, Gennadi I.; Woicik, Joseph C.; Fischer, Daniel A.; Foran, Brendan; Tseng, Hsing-Huang; Jammy, Raj [Front End Process Division, SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741-6499 (United States); National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Physical Characterization Laboratory, Advanced Technology Development Facility, 2706 Montopolis Drive, Austin, Texas 78741-6499 (United States); Front End Process Division, SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741-6499 (United States)

2007-01-15T23:59:59.000Z

227

64Cu-1,4,7-Triazacyclononane-1,4-diacetic acid-para-aminobenzoic acid-Gln-Trp-Ala-Val-Gly-His-Leu-Met-NH2  

E-Print Network [OSTI]

, 14). Prasanphanich et al. recently reported that the NOTA-based 64Cu-NOTA-8-Aoc-BBN(7颅14) NH2 conjugate (where 8-Aoc = 8-aminooctanoic acid) exhibited decreased accumulation in hepatic tissue and maintain the good pharmacokinetic properties of the 64Cu-NOTA-8-Aoc-BBN(7颅14)NH2 conjugate, Lane et al

Levin, Judith G.

228

Measurements of NH3 and CO2 with distributed-feedback diode lasers near 2.0 m in bioreactor vent gases  

E-Print Network [OSTI]

absorption transition at 5016.977 cm 1 was selected for trace gas monitoring. For CO2, an isolated transition of a diode-laser sensor used to record gas-phase NH3 and CO2 mole fractions, ex- plain the motivation for NH3 and 40 ppm for CO2, which is suitable for the expected vent gas concentrations. 2. Theory

229

Intramolecular Hydrogen Bonding in Disubstituted Ethanes. A Comparison of NH,,,O-and OH,,,O-Hydrogen Bonding through Conformational Analysis of 4-Amino-4-oxobutanoate  

E-Print Network [OSTI]

Intramolecular Hydrogen Bonding in Disubstituted Ethanes. A Comparison of NH,,,O- and OH,,,O- Hydrogen Bonding through Conformational Analysis of 4-Amino-4-oxobutanoate (succinamate) and Monohydrogen 1 of amide NH,,,O- and carboxyl OH,,,O- hydrogen bonds were investigated via conformational analysis

Goddard III, William A.

230

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

231

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network [OSTI]

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

232

Monolithic integration of GaAs and h~~~~Ga~.~Aslasers by molecular epitaxy on GaAs  

E-Print Network [OSTI]

where the thick cladding layer below the active laser region acts as a buffer layer to-yield comparable epitaxial regrowth of Ino.aGaesAs lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the -first time- to monolithically integrate these two lasers emitting near 1

233

Kohlenstoffhaltige tern鋜e Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die tern鋜en Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner d黵ften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

234

Effects of Hydrothermal Aging on NH3-SCR reaction over Cu/zeolites  

SciTech Connect (OSTI)

The effects of hydrothermal treatment on model Cu/zeolite catalysts were investigated to better understand the nature of Cu species for the selective catalytic reduction of NO{sub x} by NH{sub 3}. After hydrothermal aging at 800 C for 16 h, the NO{sub x} reduction performance of Cu-ZSM-5 and Cu-beta were significantly reduced at low temperatures, while that of Cu-SSZ-13 was not affected. When the zeolite framework aluminum species were probed using solid state {sup 27}Al-NMR, significant reduction in the intensities of the tetrahedral aluminum peak was observed for Cu-ZSM-5 and Cu-beta, although no increase in the intensities of the octahedral aluminum peak was observed. When the redox behavior of Cu species was examined using H{sub 2}-TPR, it was found that Cu{sup 2+} could be reduced to Cu{sup +} and to Cu{sup 0} fir Cu-ZSM-5 and Cu-beta catalysts, while Cu{sup 2+} could be reduced to Cu{sup +} only for Cu-SSZ-13. After hydrothermal aging, CuO and Cu-aluminate species were found to form in Cu-ZSM-5 and Cu-beta, while little changes were observed for Cu-SSZ-13.

Kwak, Ja Hun; Tran, Diana N.; Burton, Sarah D.; Szanyi, Janos; Lee, Jong H.; Peden, Charles HF

2012-02-06T23:59:59.000Z

235

Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells  

SciTech Connect (OSTI)

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

2000-07-01T23:59:59.000Z

236

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

237

Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures  

SciTech Connect (OSTI)

The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)

Chel'nyi, A A; Aluev, A V; Maslov, S V [M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

2004-01-31T23:59:59.000Z

238

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect (OSTI)

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I朧 results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

239

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

240

Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN  

Science Journals Connector (OSTI)

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN...

Yu, Chun-Ta; Lai, Wei-Chih; Yen, Cheng-Hsiung; Hsu, Hsu-Cheng; Chang, Shoou-Jinn

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

In: Proceedings of the 1995 International environmental conference; 1995 May 7-10; Atlanta, GA. Atlanta, GA: TAPPI PRESS: 445-448; 1995.  

E-Print Network [OSTI]

. Atlanta, GA: TAPPI PRESS: 445-448; 1995. ENVIRONMENTALLY SOUND ALTERNATIVES FOR UPGRADING MIXED OFFICE

Abubakr, Said

242

Surface Science Analysis of GaAs Photocathodes Following Sustained...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, strained super-lattice GaAs photocathode samples, removed from the CEBAF...

243

P-type doping of GaN  

SciTech Connect (OSTI)

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Wong, R.K.

2000-04-10T23:59:59.000Z

244

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance  

Science Journals Connector (OSTI)

A contacted electroreflectance technique was used to investigate AlGaN/GaN heterostructures and their intrinsic electric field-induced properties. By studying variations in the electroreflectance with applied field spectral features associated with the AlGaN barrier the two-dimensional electron gas at the interface and bulk GaN were identified. Barrier-layer composition and electric field were determined from the AlGaN Franz朘eldysh oscillations. For a high mobilityheterostructure grown on SiC measured AlGaN polarizationelectric field and two-dimensional electron gas density approached values predicted by a standard bandstructure model. The two-dimensional electron gas produced a broad field-tunable first derivative electroreflectance feature. With a dielectric function calculation we describe the line shape and relative amplitude of the two-dimensional electron gas electroreflectance feature for a wide range of electron density and applied field values.

S. R. Kurtz; A. A. Allerman; D. D. Koleske; A. G. Baca; R. D. Briggs

2004-01-01T23:59:59.000Z

245

Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m  

SciTech Connect (OSTI)

The spectral-kinetic properties of heterostructures with GaAs/GaAsSb-based and GaAsSb/InGaAs/GaAs-based quantum wells, emitting in the range of 1.0-1.2 {mu}m are studied with picosecond and nanosecond temporal resolution. Intense photoluminescence in the GaAsSb/InGaAs/GaAs structure, as well as an increase in the photoluminescence wavelength by a factor of 2.5 and a shift of the location of the maximum of the peak ({approx}100 meV) to the longer-wavelength region were observed up to room temperature. It is established that as the molar fraction of Sb and the thickness of the InGaAs layer increase, the energy of the fundamental transition decreases by a factor of 140 meV compared with the GaAsSb/InGaAs/GaAs structure with a lower Sb content and a smaller thickness of the InGaAs layer. At 300 K, the emission wavelength of such a structure was 1.18 {mu}m. In addition, an increase in the thickness of the InGaAs layer led to an increase in the room-temperature photoluminescence intensity by a factor of 60, which is associated with a decrease in the energy of the fundamental state for electrons in the InGaAs layer and, consequently, to larger electron localization and smaller temperature quenching of photoluminescence.

Morozov, S. V., E-mail: more@ipm.sci.-nnov.ru; Kryzhkov, D. I.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Vikhrova, O. I. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)] [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

2013-11-15T23:59:59.000Z

246

Vacancy-Induced 22 Reconstruction of the Ga(111) Surface of GaAs  

Science Journals Connector (OSTI)

Vacancy formation on the GaAs(111) surface is calculated to be strongly exothermic in character. The creation of one vacancy in each 22 cell allows the remaining Ga surface atoms to have a large inward relaxation, resulting in a 2.3-eV reduction in energy. It also transforms the polar (111) surface into a nonpolar (110)-like surface. The calculations provide strong support for the vacancy model of Tong et al., which is determined from analysis of low-energy-electron-diffraction data.

D. J. Chadi

1984-05-21T23:59:59.000Z

247

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut N閑l, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

248

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots  

SciTech Connect (OSTI)

Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous laser irradiation. The time constants varied from tens of minutes to several hours, depending on the applied laser power. Based on the spectral evolution, it was concluded that the observed phenomenon should originate from laser induced structural damage and a sustained increase of non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay dynamics at different laser powers, it is argued that there should exist other processes that hinder PL degradation at a high laser power.

Zhang Hongyi; Chen Yonghai; Zhou Xiaolong; Jia Yanan; Ye Xiaoling; Xu Bo; Wang Zhanguo [Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2013-05-07T23:59:59.000Z

249

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect (OSTI)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

250

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect (OSTI)

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

251

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

252

nh Gi Thit Hi Ti Nguyn Thin Nhin ca V Trn Du Deepwater Horizon Cc D n Khu Vc  

E-Print Network [OSTI]

Lng S貌 ip Nhm Tng C Hi 谩nh Bt Gii Tr铆 Trong V霉ng C谩n Xong Florida s c thc hin Qun Bay (h thng Vnh St Okaloosa v脿 Walton. L媒 tng ra th矛 bng c谩ch thc hin d 谩n n脿y,s lng s貌 ip ti c谩c a im c can thip cui c霉ng c贸 th s tng l锚n ti c谩c mc t duy tr矛 bn vng c cho vic 谩nh bt gii tr铆. S lng s貌 ip c谩c Qun Gulf v脿

253

Electronic Structure of TiO2/CH3NH3PbI3 Perovskite Solar Cell Interfaces  

Science Journals Connector (OSTI)

The last two decades, the research on different types of mesoscopic solar cells has grown enormously, largely because this family of solar cells can be controlled in many different ways and for their easy production. ... Recently, the use of soluble semiconductors such as organic杋norganic perovskites has shown great promise as light absorbers in solid-state mesoscopic solar cells. ... We report for the first time on a hole conductor-free mesoscopic methylammonium lead iodide (CH3NH3PbI3) perovskite/TiO2 heterojunction solar cell, produced by deposition of perovskite nanoparticles from a soln. of CH3NH3I and PbI2 in ?-butyrolactone on a 400 nm thick film of TiO2 (anatase) nanosheets exposing (001) facets. ...

Rebecka Lindblad; Dongqin Bi; Byung-wook Park; Johan Oscarsson; Mihaela Gorgoi; Hans Siegbahn; Michael Odelius; Erik M. J. Johansson; H錵an Rensmo

2014-01-24T23:59:59.000Z

254

Characteristics of V2O5/Ti-PILC catalyst for the reduction of NO by NH3  

Science Journals Connector (OSTI)

Titania-pillared clay (Ti-PILC) as a catalyst support exhibited peculiar physicochemical characteristics compared to that of titania for the reduction of NO by NH3. The morphological variation of Ti-PILC was examined with respect to the preparation method. For the freeze-dried Ti-PILC, the development of needle-like crystallites, which may reveal the formation of a 揾ouse-of-cards structure by delamination of Ti-PILC, has been observed. Ti-PILC catalyst contains high surface acidity examined by NH3 TPD. Without the impregnation of WO3 and MoO3 on V2O5/Ti-PILC catalyst as a promoter, the catalyst exhibits competitive NO removal performance to a commercial V2O5-WO3/TiO2 catalyst. In addition, Ti-PILC catalyst also exhibits the strong sulfur tolerance mainly attributed to the unique pore structure of the catalyst.

Ho Jeong Chae; In-Sik Nam; Young Gul Kim; Hee Sung Yang; Hyun Chul Choi{rk; Seok Lyong Song{rk

1999-01-01T23:59:59.000Z

255

Allele and haplotype distribution for 16 Y-STRs (AmpFlSTR Y-filer kit) in the state of Chihuahua at North Center of Mexico  

Science Journals Connector (OSTI)

The AmpFlSTR Y-filer kit, including 16 Y-STRs was analyzed in 326 males from Chihuahua, at North Central, Mexico. Allele frequencies and gene diversity for each locus were estimated. Four allele duplications, namely DYS389II, DYS390, DYS391 and DYS439; and one allele null at DYS448 were observed in the sample. The haplotype diversity was 99.97牨0.3%. The AMOVA results, including a previous report from West of Mexico (Jalisco), showed that most of the genetic variability between these Mexican populations is attributable to intrapopulational differences (99.87%). This result supports a low-genetic differentiation between males from North and West regions of Mexico.

A.B. Guti閞rez-Alarc髇; M. Moguel-Torres; A.K. Le髇-Jim閚ez; G.E. Cu閘lar-Nev醨ez; H. Rangel-Villalobos

2007-01-01T23:59:59.000Z

256

Targeting Metal-A? Aggregates with Bifunctional Radioligand [11C]L2-b and a Fluorine-18 Analogue [18F]FL2-b  

Science Journals Connector (OSTI)

Autoradiography experiments with AD positive and healthy control brain samples were used to determine the specificity of binding for the radioligands compared to [11C]PiB, a known imaging agent for ?-amyloid (A?) aggregates. ... Displacement studies of [11C]L2-b and [18F]FL2-b with PiB and AV-45 determined that L2-b binds to A? aggregates differently from known radiopharmaceuticals. Finally, brain uptake of [11C]L2-b was examined through microPET imaging in healthy rhesus macaque, which revealed a maximum uptake at 2.5 min (peak SUV = 2.0) followed by rapid egress (n = 2). ...

Brian P. Cary; Allen F. Brooks; Maria V. Fawaz; Xia Shao; Timothy J. Desmond; Garrett M. Carpenter; Phillip Sherman; Carole A. Quesada; Roger L. Albin; Peter J. H. Scott

2014-11-09T23:59:59.000Z

257

Measurement of the Inclusive e{\\pm}p Scattering Cross Section at High Inelasticity y and of the Structure Function FL  

E-Print Network [OSTI]

A measurement is presented of the inclusive neutral current e\\pm p scattering cross section using data collected by the H1 experiment at HERA during the years 2003 to 2007 with proton beam energies Ep of 920, 575, and 460 GeV. The kinematic range of the measurement covers low absolute four-momentum transfers squared, 1.5 GeV2 < Q2 < 120 GeV2, small values of Bjorken x, 2.9 \\cdot 10-5 < x < 0.01, and extends to high inelasticity up to y = 0.85. The structure function FL is measured by combining the new results with previously published H1 data at Ep = 920 GeV and Ep = 820 GeV. The new measurements are used to test several phenomenological and QCD models applicable in this low Q2 and low x kinematic domain.

Aaron, F D; Andreev, V; Backovic, S; Baghdasaryan, A; Baghdasaryan, S; Barrelet, E; Bartel, W; Behrend, O; Belov, P; Begzsuren, K; Belousov, A; Bizot, J C; Boudry, V; Bozovic-Jelisavcic, I; Bracinik, J; Brandt, G; Brinkmann, M; Brisson, V; Britzger, D; Bruncko, D; Bunyatyan, A; Buschhorn, G; Bylinkin, A; Bystritskaya, L; Campbell, A J; Cantun Avila, K B; Ceccopieri, F; Cerny, K; Cerny, V; Chekelian, V; Cholewa, A; Contreras, J G; Coughlan, J A; Cvach, J; Dainton, J B; Daum, K; Delcourt, B; Delvax, J; De Wolf, E A; Diaconu, C; Dobre, M; Dodonov, V; Dossanov, A; Dubak, A; Eckerlin, G; Egli, S; Eliseev, A; Elsen, E; Favart, L; Fedotov, A; Felst, R; Feltesse, J; Ferencei, J; Fischer, D J; Fleischer, M; Fomenko, A; Gabathuler, E; Gayler, J; Ghazaryan, S; Glazov, A; Goerlich, L; Gogitidze, N; Gouzevitch, M; Grab, C; Grebenyuk, A; Greenshaw, T; Grell, B R; Grindhammer, G; Habib, S; Haidt, D; Helebrant, C; Henderson, R C.W; Hennekemper, E; Henschel, H; Herbst, M; Herrera, G; Hildebrandt, M; Hiller, K H; Hoffmann, D; Horisberger, R; Hreus, T; Huber, F; Jacquet, M; Janssen, X; Jonsson, L; Jung, A W; Jung, H; Kapichine, M; Katzy, J; Kenyon, I R; Kiesling, C; Klein, M; Kleinwort, C; Kluge, T; Knutsson, A; Kogler, R; Kostka, P; Kraemer, M; Kretzschmar, J; Kruger, K; Kutak, K; Landon, M P.J; Lange, W; Lastovicka-Medin, G; Laycock, P; Lebedev, A; Lendermann, V; Levonian, S; Lipka, K; List, B; List, J; Loktionova, N; Lopez-Fernandez, R; Lubimov, V; Makankine, A; Malinovski, E; Marage, P; Martyn, H U; Maxfield, S J; Mehta, A; Meyer, A B; Meyer, H; Meyer, J; Mikocki, S; Milcewicz-Mika, I; Moreau, F; Morozov, A; Morris, J V; Mozer, M U; Mudrinic, M; Muller, K; Naumann, Th; Newman, P R; Niebuhr, C; Nikiforov, A; Nikitin, D; Nowak, G; Nowak, K; Olsson, J E; Osman, S; Ozerov, D; Pahl, P; Palichik, V; Panagoulias, I; Pandurovic, M; Papadopoulou, Th; Pascaud, C; Patel, G D; Perez, E; Petrukhin, A; Picuric, I; Piec, S; Pirumov, H; Pitzl, D; Placakyte, R; Pokorny, B; Polifka, R; Povh, B; Radescu, V; Raicevic, N; Ravdandorj, T; Reimer, P; Rizvi, E; Robmann, P; Roosen, R; Rostovtsev, A; Rotaru, M; Ruiz Tabasco, J E; Rusakov, S; Salek, D; Sankey, D P.C; Sauter, M; Sauvan, E; Schmitt, S; Schoeffel, L; Schoning, A; Schultz-Coulon, H C; Sefkow, F; Shtarkov, L N; Shushkevich, S; Sloan, T; Smiljanic, I; Soloviev, Y; Sopicki, P; South, D; Spaskov, V; Specka, A; Staykova, Z; Steder, M; Stella, B; Stoicea, G; Straumann, U; Sykora, T; Thompson, P D; Toll, T; Tran, T H; Traynor, D; Truol, P; Tsakov, I; Tseepeldorj, B; Tsurin, I; Turnau, J; Urban, K; Valkarova, A; Vallee, C; Van Mechelen, P; Vargas, A; Vazdik, Y; von den Driesch, M; Wegener, D; Wunsch, E; Zacek, J; Zalesak, J; Zhang, Z; Zhokin, A; Zohrabyan, H; Zomer, F

2011-01-01T23:59:59.000Z

258

DRIFT study of manganese/titania-based catalysts for low-temperature selective catalytic reduction of NO with NH{sub 3}  

SciTech Connect (OSTI)

Manganese oxides and iron-manganese oxides supported on TiO{sub 2} were prepared by the sol-gel method and used for low-temperature selective catalytic reduction (SCR) of NO with NH{sub 3}. Based on the previous study, Mn(0.4)/TiO{sub 2} and Fe(0.1)-Mn(0.4)/TiO{sub 2} were then selected to carry out the in situ diffuse reflectance infrared transform spectroscopy (DRIFT) investigation for revealing the reaction mechanism. The DRIFT spectroscopy for the adsorption of NH{sub 3} indicated the presence of coordinated NH{sub 3} and NH{sub 4}{sup +} on both of the two catalysts. When NO was introduced, the coordinated NH{sub 3} on the catalyst surface was consumed rapidly, indicating these species could react with NO effectively. When NH{sub 3} was introduced into the sample preadsorbed with NO + O{sub 2}, SCR reaction would not proceed on Mn(0.4)/TiO{sub 2}. However, for Fe(0.1)-Mn(0.4)/TiO{sub 2} the bands due to coordinated NH{sub 3} on Fe{sub 2}O{sub 3} were formed. Simultaneously, the bidentate nitrates were transformed to monodentate nitrates and NH{sub 4}{sup +} was detected. NO{sub 2} from the oxidation of NO on catalyst could react with NH{sub 4}{sup +} leading to the reduction of NO. Therefore, it was suggested that the SCR reaction on Fe(0.1)-Mn(0.4)/TiO{sub 2} could also take place in a different way from the reactions on Mn(0.4)/TiO{sub 2} proposed by other researchers. Furthermore, the SCR reaction steps for these two kinds of catalysts were proposed. 29 refs., 9 figs.

Zhongbiao Wu; Boqiong Jiang; Yue Liu; Haiqiang Wang; Ruiben Jin [Zhejiang University, Hangzhou (China). Dept. of Environmental Engineering

2007-08-15T23:59:59.000Z

259

Localized corrosion of GaAs surfaces and formation of porous GaAs  

SciTech Connect (OSTI)

The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

Schmuki, P.; Vitus, C.M.; Isaacs, H.S. [Brookhaven National Lab., Upton, NY (United States); Fraser, J.; Graham, M.J. [National Research Council of Canada, Ottawa, ON (Canada). Inst. for Microstructural Sciences

1995-12-01T23:59:59.000Z

260

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; 謟g黵, .; Morko, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

262

Supporting Information Electric Field Reversal of Na2SO4, (NH4)2SO4, and Na2CO3 relative to CaCl2  

E-Print Network [OSTI]

water 1 M Na2 CO3 1 M Na2 SO4 1 M (NH4 )2 SO4 2 M CaCl2 2 M NaCl Re (2) (a.u.) Incident Infrared (cm -1.8 M CaCl2, 1.8 M NaCl, 1.1 M Na2CO3, 1.1 M Na2SO4, and 1.1 M (NH4)2SO4 salt solutions. ExperimentalS1 Supporting Information Electric Field Reversal of Na2SO4, (NH4)2SO4, and Na2CO3 relative to CaCl

263

Time-Resolved XAFS Spectroscopic Studies of B-H and N-H Oxidative Addition to Transition Metal Catalysts Relevant to Hydrogen Storage  

SciTech Connect (OSTI)

Successful catalytic dehydrogenation of aminoborane, H3NBH3, prompted questions as to the potential role of N-H oxidative addition in the mechanisms of these processes. N-H oxidative addition reactions are rare, and in all cases appear to involve initial dative bonding to the metal by the amine lone pairs followed by transfer of a proton to the basic metal. Aminoborane and its trimethylborane derivative block this mechanism and, in principle, should permit authentic N-H oxidative attrition to occur. Extensive experimental work failed to confirm this hypothesis. In all cases either B-H complexation or oxidative addition of solvent C-H bonds dominate the chemistry.

Bitterwolf, Thomas E. [University of Idaho

2014-12-09T23:59:59.000Z

264

The development of integrated chemical microsensors in GaAs  

SciTech Connect (OSTI)

Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

1999-11-01T23:59:59.000Z

265

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network [OSTI]

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

266

The Essentials for GA Water Planning The Relationship  

E-Print Network [OSTI]

Water Plan and the Alabama-Florida-Georgia Water Sharing Dispute (The failure to agree on the two Management F. Conservation & Reuse a. Programs for Water Use Efficiency b. Consumptive Use & Return Flows GThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

267

211 Westcott Building, 222 S. Copeland Avenue, P.O. Box 3061480, Tallahassee, FL 32306-1480 Telephone 850.644.6876, Fax 850.644.3375 http://fda.fsu.edu  

E-Print Network [OSTI]

211 Westcott Building, 222 S. Copeland Avenue, P.O. Box 3061480, Tallahassee, FL 32306 Development and Advancement in Westcott 115 by Friday, March 21, 2014, for submission to the President and Advancement in Westcott 115 for each specialized faculty. Article 14 (and Appendix J of the FSU-BOT UFF

Sura, Philip

268

A. Kusiak, Data Mining and Decision Making, in B.V. Dasarathy (Ed.), Proceedings of the SPIE Conference on Data Mining and Knowledge Discovery: Theory, Tools, and Technology IV, Vol. 4730, SPIE, Orlando, FL, April 2002, pp. 155-165.  

E-Print Network [OSTI]

A. Kusiak, Data Mining and Decision Making, in B.V. Dasarathy (Ed.), Proceedings of the SPIE Conference on Data Mining and Knowledge Discovery: Theory, Tools, and Technology IV, Vol. 4730, SPIE, Orlando, FL, April 2002, pp. 155-165. Data Mining and Decision Making Andrew Kusiak Department of Mechanical

Kusiak, Andrew

269

Growth of InGaN HBTs by MOCVD THEODORE CHUNG,1,5  

E-Print Network [OSTI]

. Trimethylgallium (TMGa), trimethylindium (TMIn), and ammonia (NH3) are used as the sour- ces, while disilane (Si2H6

Asbeck, Peter M.

270

Structure of a Si(100)22-Ga surface  

Science Journals Connector (OSTI)

The 22 structure formed on a Ga-adsorbed Si(100) surface is determined using tensor low-energy electron diffraction. I-V curves of the parallel dimer model are in excellent agreement with those of the experiment, indicating that the actual surface has parallel dimer structure. Specific displacements of the topmost two surface layers (the protrusion of the Ga dimer toward the vacuum, the increase of the bond length of the Ga dimer, the stretching of the Si dimer, and the movement of the Si dimer toward the Ga dimer) with the elongation of the Si dimer back bond are observed in the optimized geometry. The Ga-Si bond angle measured from the Si(100) surface plane is recovered with these displacements from that of the ideal geometry where each bond length is assumed to be the sum of Pauling covalent radii. Subsurface layers are also deformed to keep the bond lengths near their bulk values.

H. Sakama; K. Murakami; K. Nishikata; A. Kawazu

1994-11-15T23:59:59.000Z

271

Electronic structure of metallic antiperovskite compound GaCMn3  

Science Journals Connector (OSTI)

We have investigated the electronic structures of antiperovskite GaCMn3 and related Mn compounds SnCMn3, ZnCMn3, and ZnNMn3. In the paramagnetic state of GaCMn3, the Fermi surface nesting feature along the ?R direction is observed, which induces the antiferromagnetic (AFM) spin ordering with the nesting vector Q??R. Calculated susceptibilities confirm the nesting scenario for GaCMn3, and also explain various magnetic structures of other antiperovskite compounds. Through the band folding effect, the AFM phase of GaCMn3 is stabilized. Nearly equal densities of states at the Fermi level in the ferromagnetic and AFM phases of GaCMn3 indicate that two phases are competing in the ground state.

J. H. Shim; S. K. Kwon; B. I. Min

2002-07-10T23:59:59.000Z

272

Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers  

Science Journals Connector (OSTI)

In0.135Ga0.865N/GaN p杋杗 solar cells are fabricated and investigated with three types of transparent current spreading layers (TCSLs): Ni/Au layer type (Ni/Au-L), Ni/Au grid type (Ni/Au-G), and ITO layer type (I...

X. M. Cai; Y. Wang; Z. D. Li; X. Q. Lv; J. Y. Zhang; L. Y. Ying

2013-05-01T23:59:59.000Z

273

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network [OSTI]

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

274

Surface roughening during depth profiling by Secondary Ion Mass Spectrometry (SIMS) in GaAlAs and GaAs  

Science Journals Connector (OSTI)

During bombardment of Ga1?xAlxAs and GaAs with oxygen we found an abrupt transition to higher sputter rates, change of the useful yield and significant increase of surface roughness at a well defined depth, which...

M. Gericke; T. Lill; M. Trapp; C. -E. Richter

275

GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization  

E-Print Network [OSTI]

radiation hardness than Si, GaAs, CdS and GaN, therefore it should be suitable for space applications. Last novel optoelectronic devices circumventing the problem of p-type doping of ZnO. In such Al devices become reality: the problem of p-type doping of ZnO. So far, there is no way to reliably produce

Wetzel, Christian M.

276

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

277

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm GaN-on-Si...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

278

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

279

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network [OSTI]

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

280

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1  

E-Print Network [OSTI]

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1 Jie Lian,2,3 Wei Lu,4 and Lumin Wang1,5,* 1 Department of Materials Science and Engineering, University Arbor, Michigan 48109, USA 3 Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer

Lu, Wei

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics  

SciTech Connect (OSTI)

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

2002-10-01T23:59:59.000Z

282

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect (OSTI)

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

283

Magnetic-field effects on quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells  

Science Journals Connector (OSTI)

We have used the variational procedure in the effective-mass and nondegenerate parabolic band approximations in order to investigate the effects of a magnetic field on the exciton effective mass and dispersion in semiconductor heterostructures. Calculations are performed for bulk GaAs, and two-dimensional and quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells for applied magnetic fields perpendicular to the layers. A simple hydrogenlike envelope wave function provides the expected behavior for the exciton dispersion in a wide range of the center-of-mass momenta, and an analytical expression for the exciton effective mass is obtained. Present results lead to a magnetic-field dependent exciton effective mass and dispersion in quite good agreement with available experimental measurements in coupled GaAs?(Ga,Al)As quantum wells.

E. Reyes-G髆ez, L. E. Oliveira, and M. de Dios-Leyva

2005-01-14T23:59:59.000Z

284

The discovery of [Ru(NH3)5N2]2+: A case of serendipity and the scientific method  

Science Journals Connector (OSTI)

In this paper the author provides a personal account of the events leading up to the realization [Ru9NH3)5N2]2+ is a real species.

Caesar V. Senoff

1990-01-01T23:59:59.000Z

285

Pillared smectite modified with carbon and manganese as catalyst for SCR of NOx with NH3. Part I. General characterization and catalyst screening  

Science Journals Connector (OSTI)

Carbon- and manganese-modified zirconia-pillared smectites were prepared, characterized (XRD, BET and pore analysis, XPS) and tested in selective catalytic reduction of NOx with NH3. Both untreated and acidic pre...

Lucjan Chmielarz; Roman Dziembaj; Teresa Grzybek; Jerzy Klinik

286

Experimental trial of a hollow-core waveguide used as an absorption cell for concentration measurement of NH3 gas with a CO2 laser  

Science Journals Connector (OSTI)

The basic idea of using a hollow-core waveguide as an absorption cell in a spectroscopic gas measurement system is proposed. Measurements of NH3 gas concentration were made...

Saito, Yasunori; Kanaya, Tatsunori; Nomura, Akio; Kano, Tetsuo

1993-01-01T23:59:59.000Z

287

Supporting Information Surface Electric Fields of Aqueous Solutions of NH4NO3, Mg(NO3)2, NaNO3,  

E-Print Network [OSTI]

S1 Supporting Information Surface Electric Fields of Aqueous Solutions of NH4NO3, Mg(NO3)2, NaNO3 interfaces of (a) 1.0 M and 2.0 M LiNO3, (b) 1.0 M and 1.7 M NaNO3, (c) 1.0 M and 1.6 M NH4NO3, and (d) 1.0 M water 1.0 M NaNO3 1.7 M NaNO3 c water 1.0 M NH4 NO3 1.6 M NH4 NO3 | (2) | 2 (10 3 arb.units) Wavenumber

288

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets  

SciTech Connect (OSTI)

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Casta駉, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

2013-11-14T23:59:59.000Z

289

64Cu-1,4,7-Triazacyclononane-1,4-diacetic acid-6-aminohexanoic acid-Gln-Trp-Ala-Val-Gly-His-Leu-Met-NH2  

E-Print Network [OSTI]

. recently reported that the NOTA-based 64Cu-NOTA-8-Aoc-BBN(7颅14) NH2 conjugate (where 8-Aoc = 8 pharmacokinetic properties of the 64Cu-NOTA-8-Aoc-BBN(7颅14)NH2 conjugate, Lane et al. synthesized a new group of conjugates with the NOTA derivative NO2A and replaced the spacer 8-Aoc with an aliphatic or aromatic linking

Levin, Judith G.

290

64Cu-1,4,7-Triazacyclononane-1,4-diacetic acid-9-aminonanoic acid-Gln-Trp-Ala-Val-Gly-His-Leu-Met-NH2  

E-Print Network [OSTI]

. recently reported that the NOTA-based 64Cu-NOTA-8-Aoc-BBN(7颅14) NH2 conjugate (where 8-Aoc = 8 pharmacokinetic properties of the 64Cu-NOTA-8-Aoc-BBN(7颅14)NH2 conjugate, Lane et al. synthesized a new group of conjugates with the NOTA derivative NO2A and replaced the spacer 8-Aoc with an aliphatic or aromatic linking

Levin, Judith G.

291

.Research Module: Scheme 2. N-Benzylation of N-H Pyrazolidinones 3. 3 6. 60 Scheme 2 Procedure: N-Alkylation Using Aldehyde  

E-Print Network [OSTI]

folder. It will actually produce two NMR printouts for you. The first one will be dominated by methanol Scheme 1, add 10 mL of anhydrous methanol. 路 For 4-methoxy compoud 3c, add 20 mL of methanol, since the 4-Benzylation Synthesis of N-Benzyl Pyrazolidinones NH NH O R1 3a-e + H O 4 Methanol Solvent 0.05 CF3CO2H (catalyst) N N O

Jasperse, Craig P.

292

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

293

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

294

Exciton recombination dynamics in InxGa1-xAs/GaAs quantum wells  

Science Journals Connector (OSTI)

Low-temperature decay times ?PL are reported for a series of InxGa1-xAs/GaAs quantum wells. These show a nearly linear increase with increasing thickness (4?Lz?10 nm, x=0.15) but recombination in the widest well (12 nm) is dominated by nonradiative effects. The decay time increases almost linearly with temperature up to 50 K, as expected for free excitons. An increase in ?PL with increasing In composition (0.05?x?0.25, Lz=8 nm) is also observed. Wells with different In compositions exhibit a similar temperature behavior and there is a weak influence of strain on the decay time. Additional peaks in the photoluminescence spectra occur to the low-energy side of the free-exciton peaks. These features, which exhibit longer decay times, are attributed to excitons localized in In-rich islands arising from indium segregation.

Haiping Yu; Christine Roberts; Ray Murray

1995-07-15T23:59:59.000Z

295

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect (OSTI)

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

296

Theory of Hydride-Proton Transfer (HPT) Carbonyl Reduction by [Os(III)(tpy)(Cl)(NH=CHCH3)(NSAr)  

SciTech Connect (OSTI)

Quantum mechanical analysis reveals that carbonyl reduction of aldehydes and ketones by the imine-based reductant cis-[Os{sup III}(tpy)(Cl)(NH?CHCH{sub 3})(NSAr)] (2), which is accessible by reduction of the analogous nitrile, occurs by hydride-proton transfer (HPT) involving both the imine and sulfilimido ligands. In carbonyl reduction, water or alcohol is necessary to significantly lower the barrier for proton shuttling between ligands. The ?N(H)SAr group activates the carbonyl group through hydrogen bonding while the ?NC(H)CH{sub 3} ligand delivers the hydride.

Ess, Daniel H.; Schauer, Cynthia; Meyer, Thomas J.

2010-01-01T23:59:59.000Z

297

Photovoltaic properties of GaAs:Be nanowire arrays  

SciTech Connect (OSTI)

Arrays of GaAs:Be nanowires are synthesized by molecular beam epitaxy on GaAs(111)B substrates. Prototypes of photovoltaic converters in which the grown nanowire arrays are used as active layers are produced by means of successive photolithography, etching, and metallization processes. Studying the photovoltaic properties of the fabricated structures using a solar radiation simulator demonstrates that the solarenergy conversion efficiency is about 0.1%. The value of the efficiency recalculated with the area occupied by the p-type nanowires on the surface of the n-type GaAs substrate taken into account amounts to 1.1%.

Bouravleuv, A. D.; Beznasyuk, D. V.; Gilstein, E. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Tchernycheva, M.; Luna Bugallo, A. De; Rigutti, L. [University Paris Sud 11, Institut d'Electronique Fondamentale UMR CNRS 8622 (France); Yu, L. [CNRS, Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique (France); Proskuryakov, Yu. [University of Liverpool, Stephenson Institute for Renewable Energy (United Kingdom); Shtrom, I. V.; Timofeeva, M. A. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Samsonenko, Yu. B.; Khrebtov, A. I.; Cirlin, G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-06-15T23:59:59.000Z

298

Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires  

SciTech Connect (OSTI)

Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

Kim, D. C.; Ahtapodov, L.; Boe, A. B.; Moses, A. F.; Dheeraj, D. L.; Fimland, B. O.; Weman, H. [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway); Choi, J. W.; Ji, H.; Kim, G. T. [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2011-12-23T23:59:59.000Z

299

Effects of Ga ion-beam irradiation on monolayer graphene  

SciTech Connect (OSTI)

The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.

Wang, Quan; Mao, Wei; Zhang, Yanmin; Shao, Ying; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)] [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China) [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-08-12T23:59:59.000Z

300

Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs  

Science Journals Connector (OSTI)

Electrolyte electroreflectance (EER) experiments were performed on In 0.22 Ga 0.78 As/GaAs single quantum wells grown by the conventional molecular-beam-epitaxy (MBE) shutter operation and also by modified MBE shutter operation intended to form more compositionally abrupt normal and inverted interfaces. The latter included controlled thermal desorption of the surface segregated In at the InGaAs layer surface (flash off) and the deposition of In at the InGaAs/GaAs interface to eliminate compositional broadening (predeposition). The fundamental energy gap and subband transitions were determined experimentally and compared with an accurate calculation of the potential well problem including strain. These results confirmed the segregation of In atoms near the interface. The segregation was maximum in the conventional (normal) MBE sample and least with the modified growth incorporating predeposition and flash off as expected. The segregated atoms are observed to act as dopants and form junctions near the InGaAs/GaAs interface. This study shows that EER can be used as an effective tool for studying the segregation process in MBE growth.

K. Chattopadhyay; J. Aubel; S. Sundaram; J. E. Ehret; R. Kaspi; Keith R. Evans

1997-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Exergy analysis of a novel air-cooled non-adiabatic absorption refrigeration cycle with NH3朜aSCN and NH3朙iNO3 refrigerant solutions  

Science Journals Connector (OSTI)

Abstract This paper presents a methodology of exergy analysis for ammonia-lithium nitrate and ammonia-sodium thiocyanate absorption refrigeration cycle which applies a novel air-cooled type non-adiabatic absorber to improve both the coefficient of performance and exegetic efficiency of the system under air cooling condition. A modified entropy calculation method for NH3/NaSCN and NH3/LiNO3 solutions is presented in this literature and different results are obtained comparing to previous research. In addition to the variation of solution temperature and pressure from specific working state to the reference state, the variation of solution concentration, which was always neglected by previous researchers in ammonia/salt solution exergy calculation, has been taken into account while analyzing the least potential of ammonia/salt solution for doing useful work, and a corresponding approach for specific exergy calculation is presented. The effects of generator temperature, absorber outlet temperature, absorber efficiency and other system parameters on system exergetic efficiency have been discussed in this study. Analysis results indicate that relatively high system performance can be obtained by air-cooled type ammonia/salt absorption refrigeration cycles when non-adiabatic absorbers are applied in these systems.

Dehua Cai; Guogeng He; Qiqi Tian; Weier Tang

2014-01-01T23:59:59.000Z

302

The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency  

Science Journals Connector (OSTI)

This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) ... quantum dot effectively enhance the overall power conversion efficiency

Chen-Chen Chung; Binh Tinh Tran; Hau-Vei Han; Yen-Teng Ho

2014-03-01T23:59:59.000Z

303

Improvement of orange ii photobleaching by moderate Ga3+ doping of titania and detrimental effect of structural disorder on Ga overloading  

Science Journals Connector (OSTI)

Highly photoactive Ga3+-doped anatase modification of titania was prepared by homogeneous hydrolysis of aqueous solutions mixture of titanium oxo-sulphate TiOSO4 and gallium(III) nitrate with urea. Incorporation of Ga3+ ...

V醕lav 妕engl, Jil Henych, Michaela Slu歯, Tom釟 Matys Grygar, Jana Velick, Martin Kormunda

2014-01-01T23:59:59.000Z

304

Kinetics of indirect photoluminescence in GaAs/AlxGa1?x As double quantum wells in a random potential with a large amplitude  

Science Journals Connector (OSTI)

The kinetics of indirect photoluminescence of GaAs/AlxGa1?x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is ...

L. V. Butov; A. V. Mintsev; A. I. Filin

1999-05-01T23:59:59.000Z

305

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect (OSTI)

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

306

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect (OSTI)

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

307

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy  

Science Journals Connector (OSTI)

Time-resolved photoluminescence(TRPL) and positron annihilation measurements as well as Al0.23Ga0.77N/GaN heterostructuregrowth by metalorganic vapor phase epitaxy were carried out on very low defect density polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence(PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L +); i.e. decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L + being 116?nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100?K and levels off at approximately 1.1?ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al0.23Ga0.77N/GaN/Al0.18Ga0.82N/GaN heterostructure are improved by the use of FS-GaN substrates in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Al0.23Ga0.77N/GaN single heterostructuregrown on the c-plane FS-GaN substrate.

S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono

2012-01-01T23:59:59.000Z

308

Polarization charges and polarization-induced barriers in AlxGa1xNGaN and InyGa1yNGaN heterostructures  

E-Print Network [OSTI]

N?GaN heterostructures L. Jia,a) E. T. Yu, D. Keogh, and P. M. Asbeck Department of Electrical and Computer EngineeringGa1 yN surrounded by n-GaN, capacitance颅 voltage profiling studies combined with elementary will most likely require further improvements in p-type GaN conduc- tivity and fabrication of low-resistance

Yu, Edward T.

309

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

310

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

311

Lattice vibrations of pure and doped GaSe  

SciTech Connect (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

312

GaAs solar cells close to the thermodynamic limit  

Science Journals Connector (OSTI)

The efficiency of GaAs solar cells can be increased by applying angularly selective filters. It is shown in terms of detailed balance model, why this happens and the concept is proven...

Hoehn, Oliver; Kraus, Tobias; Bauhuis, Gerard; Schwarz, Ulrich T; Bl鋝i, Benedikt

313

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network [OSTI]

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

314

Modeling of InGaN/Si tandem solar cells  

Science Journals Connector (OSTI)

We investigate theoretically the characteristics of monolithic InGaN/Si two-junction series-connected solar cells using the air mass 1.5 global irradiance spectrum. The addition of an InGaN junction is found to produce significant increases in the energy conversion efficiency of the solar cell over that of one-junction Si cells. Even when Si is not of high quality such two-junction cells could achieve efficiencies high enough to be practically feasible. We also show that further though smaller improvements of the efficiency can be achieved by adding another junction to form an InGaN/InGaN/Si three-junction cell.

L. Hsu; W. Walukiewicz

2008-01-01T23:59:59.000Z

315

Exciton front propagation in photoexcited GaAs quantum wells  

E-Print Network [OSTI]

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton ...

Yang, Sen

316

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

317

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy  

SciTech Connect (OSTI)

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 10{sup ?5} cm{sup ?1}, and the length of SFs is less than 15 nm.

Shao, Jiayi; Malis, Oana [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, Dmitri N. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)] [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Edmunds, Colin [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)] [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 49707 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 49707 (United States)

2013-12-02T23:59:59.000Z

318

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy  

Science Journals Connector (OSTI)

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular- ... (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as ... back surface field la...

Shulong Lu; Lian Ji; Wei He; Pan Dai; Hui Yang

2011-10-01T23:59:59.000Z

319

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect (OSTI)

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

320

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

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321

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network [OSTI]

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

322

Category:Utility Rate Impacts on PV Economics By Location | Open Energy  

Open Energy Info (EERE)

Utility Rate Impacts on PV Economics By Location Utility Rate Impacts on PV Economics By Location Jump to: navigation, search Impact of Utility Rates on PV Economics Montgomery, AL Little Rock, AR Flagstaff, AZ Phoenix, AZ Tucson, AZ Arcata, CA LA, CA San Francisco, CA Boulder, CO Eagle County, CO Pueblo, CO Bridgeport, CT Wilmington, DE Miami, FL Tampa, FL Atlanta, GA Savannah, GA Des Moines, IA Mason, IA Boise, ID Chicago, IL Springfield, IL Indianapolis, IN Goodland, KS Wichita, KS Lexington, KY New Orleans, LA Shreveport, LA Boston, MA Baltimore, MD Caribou, ME Portland, ME Detroit, MI Houghton-Lake, MI Traverse City, MI International Falls, MN Minneapolis, MN Kansas City, MO Jackson, MS Billings, MT Greensboro, NC Wilmington, NC Bismarck, ND Minot, ND Omaha, NE Concord, NH Atlantic City, NJ Albuquerque, NM Las Vegas, NV Reno, NV New York, NY

323

,i . Hadley `~~OE..."~OEoe...fl...l"~,, . ,2006 ,49(5) :1271 1278 Zhou B T, Wang H J . Interannual and interdecadal variations of the Hadley Circulation and its connection with tropical sea surface  

E-Print Network [OSTI]

,i禄? . Hadley 禄路`~~OE...掳"~OE路oe...掳颅禄fl...潞篓篓路l"拢麓~,, . 搂颅陇 ,2006 ,49(5) :1271隆芦 1278 Zhou B T, Wang H J . Interannual and interdecadal variations of the Hadley Circulation and its connection with tropical sea surface temperature. Chinese J . Geophys. (in Chinese) , 2006 ,49(5) :1271隆芦 1278 Hadley

324

Elementary steps of the catalytic NO{sub x} reduction with NH{sub 3}: Cluster studies on reaction paths and energetics at vanadium oxide substrate  

SciTech Connect (OSTI)

We consider different reaction scenarios of the selective catalytic reduction (SCR) of NO in the presence of ammonia at perfect as well as reduced vanadium oxide surfaces modeled by V{sub 2}O{sub 5}(010) without and with oxygen vacancies. Geometric and energetic details as well as reaction paths are evaluated using extended cluster models together with density-functional theory. Based on earlier work of adsorption, diffusion, and reaction of the different surface species participating in the SCR we confirm that at Br鴑sted acid sites (i.e., OH groups) of the perfect oxide surface nitrosamide, NH{sub 2}NO, forms a stable intermediate. Here adsorption of NH{sub 3} results in NH{sub 4} surface species which reacts with gas phase NO to produce the intermediate. Nitrosamide is also found as intermediate of the SCR near Lewis acid sites of the reduced oxide surface (i.e., near oxygen vacancies). However, here the adsorbed NH{sub 3} species is dehydrogenated to surface NH{sub 2} before it reacts with gas phase NO to produce the intermediate. The calculations suggest that reaction barriers for the SCR are overall higher near Br鴑sted acid sites of the perfect surface compared with Lewis acid sites of the reduced surface, examined for the first time in this work. The theoretical results are consistent with experimental findings and confirm the importance of surface reduction for the SCR process.

Gruber, M.; Hermann, K. [Inorganic Chemistry Department, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin (Germany)] [Inorganic Chemistry Department, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin (Germany)

2013-12-28T23:59:59.000Z

325

Electronic properties of the Ga vacancy in GaP(110) surfaces determined by scanning tunneling microscopy  

Science Journals Connector (OSTI)

The electronic properties of uncharged Ga monovacancies in GaP(110) surfaces are determined from voltage-dependent scanning tunneling microscopy images. The signatures of localized defect states in the band gap are analyzed and their spatial location is determined. Empty and occupied defect states exist. Depressed dangling bonds in the occupied-state images indicate an inward relaxation of the neighboring P atoms. The results agree with recent theoretical work.

Ph. Ebert and K. Urban

1998-07-15T23:59:59.000Z

326

Microscopic identification of the compensation mechanisms in Si-doped GaAs  

Science Journals Connector (OSTI)

The compensation mechanisms of SiGa donors in GaAs are determined by scanning tunneling microscopy. With increasing Si concentration the SiGa donors are consecutively electrically deactivated by SiAs acceptors, Si clusters, and SiGa-Ga-vacancy complexes. A microscopic model based on the screened Coulomb interaction between charged dopants, the amphoteric nature of Si, and the Fermi-level effect is proposed. It explains the observed defects, the critical Si concentrations of each identified mechanism, and predicts the solubility limit of Si in GaAs. 1996 The American Physical Society.

C. Domke, Ph. Ebert, M. Heinrich, and K. Urban

1996-10-15T23:59:59.000Z

327

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network [OSTI]

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

328

4D Density Determination of NH Radicals in an MSE Microplasma Combining Planar Laser Induced Fluorescence and Cavity Ring-Down Spectroscopy  

SciTech Connect (OSTI)

An application of microplasmas is surface modification under mild conditions and of small, well defined areas. For this, an understanding of the plasma composition is of importance. First results of our work on the production and detection of NH radicals in a capacitively coupled radio frequency (RF) microplasma are presented. A microstructured comb electrode was used to generate a glow discharge in a hydrogen/nitrogen gas mixture by applying 13.56 MHz RF voltage. The techniques of planar laser induced fluorescence (PLIF) and cavity ring-down spectroscopy (CRDS) are used for space and time resolved, quantitative detection of the NH radical in the plasma. The rotational temperature was determined to be 820 K and, the density 5.1x10{sup 12} cm{sup 3}. Also, time dependent behaviour of the NH production was observed.

Visser, Martin; Schenk, Andreas; Gericke, Karl-Heinz [Technische Universitaet Braunschweig, Institut fuer Physikalische und Theoretische Chemie Hans-Sommer-Str. 10, 38106 Braunschweig (Germany)

2010-10-13T23:59:59.000Z

329

Unusual defect physics in CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cell absorber  

SciTech Connect (OSTI)

Thin-film solar cells based on Methylammonium triiodideplumbate (CH{sub 3}NH{sub 3}PbI{sub 3}) halide perovskites have recently shown remarkable performance. First-principle calculations show that CH{sub 3}NH{sub 3}PbI{sub 3} has unusual defect physics: (i) Different from common p-type thin-film solar cell absorbers, it exhibits flexible conductivity from good p-type, intrinsic to good n-type depending on the growth conditions; (ii) Dominant intrinsic defects create only shallow levels, which partially explain the long electron-hole diffusion length and high open-circuit voltage in solar cell. The unusual defect properties can be attributed to the strong Pb lone-pair s orbital and I p orbital antibonding coupling and the high ionicity of CH{sub 3}NH{sub 3}PbI{sub 3}.

Yin, Wan-Jian, E-mail: wanjian.yin@utoledo.edu; Shi, Tingting; Yan, Yanfa, E-mail: yanfa.yan@utoledo.edu [Department of Physics and Astronomy and Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606 (United States)

2014-02-10T23:59:59.000Z

330

NOIlVUlSININdV NOIlVWdOdNI AOd3N3 ACTO3NH  

Gasoline and Diesel Fuel Update (EIA)

NOIlVUlSININdV NOIlVWdOdNI AOd3N3 NOIlVUlSININdV NOIlVWdOdNI AOd3N3 ACTO3NH 0661 This publication may be purchased from the Superintendent of Documents, U.S. Government Printing Office. Purchasing in formation for this or other Energy Information Administration (EIA) publications may be obtained from the Government Printing Office or ElA's National Energy Information Center. Questions on energy statistics should be directed to the Center by mail, telephone, or telecommunications device for the hearing impaired. Addresses, telephone numbers, and hours are as follows: National Energy Information Center Energy Information Administration Forrestal Building, Room 1F-048 Washington, DC 20585 (202) 586-8800 Telecommunications Device for the Hearing Impaired Only: (202) 586-1181 8 a.m. - 5 p.m., eastern time, M-F

331

nh Gi Thit Hi Ti Nguyn Thin Nhin ca V Trn Du Deepwater Horizon Cc D n Qun Franklin  

E-Print Network [OSTI]

C么ng Vi锚n Bald Point Ca Tiu Bangc xut s x芒y dng c谩c m谩i che cm tri, c谩c li i l贸t v谩n, v脿 mt nh脿 v sinh vi h thng x l媒 bng kh铆 v脿 b茫i thi ti C么ng Vi锚n Bald Point ca Tiu bang Alligator Point. Ngo脿i ra u xe k猫m theo ti Cash Bayou. Xut Ci To C么ng Vi锚n v脿 Dc Th Thuyn Qun Franklin: D 谩n C么ng Vi锚n Indian

332

Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer  

SciTech Connect (OSTI)

Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup ?2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H. [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan); Kachi, T. [Toyota Central R and D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Sugimoto, M. [Toyota Motor Corporation, 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309 (Japan)

2013-12-04T23:59:59.000Z

333

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network [OSTI]

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

334

Growth of Core?Shell Ga?GaN Nanostructures via a Conventional Reflux Method and the Formation of Hollow GaN Spheres  

Science Journals Connector (OSTI)

Gallium nitride (GaN) is an important III?V semiconductor with a wide direct band gap of ?3.4 eV. ... LiHMDS exhibits good solubility in TOA. ... The products were collected by centrifugation twice at 7000 rpm for 2 min in hexane, isopropanol, ethanol, and then deionized water. ...

Tz-Jun Kuo; Chi-Liang Kuo; Chun-Hong Kuo; Michael H. Huang

2009-02-05T23:59:59.000Z

335

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect (OSTI)

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

336

Metal contacts on ZnSe and GaN  

SciTech Connect (OSTI)

Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

Duxstad, K.J. [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering; [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

1997-05-01T23:59:59.000Z

337

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network [OSTI]

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

338

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect (OSTI)

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

339

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN  

E-Print Network [OSTI]

. Hasama, "Subpicosecond saturation of intersubband absorption in (CdS/ZnSe)/BeTe quantum well waveguides. Cho, "Intersubband absorption at ~ 1.55 m in well- and modulation-doped GaN/AlGaN multiple quantum

340

Atomic-Level Study of Melting Behavior of GaN Nanotubes. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Melting Behavior of GaN Nanotubes. Atomic-Level Study of Melting Behavior of GaN Nanotubes. Abstract: Molecular dynamics simulations with a Stillinger-Weber potential have been...

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Electric field engineering in GaN high electron mobility transistors  

E-Print Network [OSTI]

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

342

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

343

Structural ordering and interface morphology in symmetrically strained(GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)  

Science Journals Connector (OSTI)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest ?110? directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation. A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

C. Giannini; L. Tapfer; Y. Zhuang; L. De Caro; T. Marschner; W. Stolz

1997-02-15T23:59:59.000Z

344

THERMAL STUDY OF A GaN-BASED HEMT A Dissertation  

E-Print Network [OSTI]

of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) under bias conditions. An experimental

Sen, Mihir

345

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect (OSTI)

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

346

Doping and isolation of GaN, InGaN and InAlN using ion implantation  

SciTech Connect (OSTI)

Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after subsequent annealing in the range 600-700{degrees}C. Smaller increases in sheet resistance are observed for In{sub x}Ga{sup 1-x}N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.

Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States)] [and others

1995-08-01T23:59:59.000Z

347

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect (OSTI)

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

348

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect (OSTI)

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Universit, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

349

Novel photoaffinity ligands for the GA-receptor  

SciTech Connect (OSTI)

Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

Suttle, J.C.; Hultstrand, J.F.; Tanaka, F.S. (USDA/ARS Biosciences Research Laboratory, Fargo, ND (USA))

1990-05-01T23:59:59.000Z

350

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect (OSTI)

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

351

Invited Paper GaAs/A1O photonic bandgap material fabrication and characterization  

E-Print Network [OSTI]

semiconductor crystals, photonic crystals do not occur naturally. There are, therefore, several seemingly direct bandgap semiconductors, such as GaAs, A1GaAs, InP, InGaAsP, etc., in which the radiative-dimensional photonic bandgaps for microwave and millimeter-wave radiation, and for shorter optical wavelengths in one

Zhou, Weidong

352

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network [OSTI]

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

353

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

354

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network [OSTI]

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

355

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network [OSTI]

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

356

Structure-Activity Relationships in NH3-SCR over Cu-SSZ-13 as Probed by Reaction Kinetics and EPR Studies  

SciTech Connect (OSTI)

Cu-SSZ-13 catalysts with various Cu loadings were prepared via solution ion exchange. The hydrated samples were studied with Electron Paramagnetic Resonance (EPR). Cu2+ ion coordination numbers were obtained by analyzing the hyperfine structures while Cu-Cu distances were estimated from line broadening of the EPR features. By coupling EPR and temperature-programmed reduction (TPR) results, two Cu2+ ion locations were suggested. Standard and fast NH3-SCR, as well as non-selective NH3 oxidation reactions were carried out over these catalysts at high space velocities. For the SCR reaction, intra-particle diffusion limitation was found throughout the reaction temperatures investigated. Although clear structure-activity relationships cannot be derived, the reaction results allow for reactant diffusivities and Cu2+ ion locations to be estimated. The slower NH3 oxidation reaction, on the other hand, is kinetically limited at low temperatures, and, therefore, allows for a correlation between Cu2+ ion location and reaction kinetics to be made. Furthermore, the dynamic Cu2+ ion motion as a function of temperature could also be derived from the NH3 oxidation kinetics.

Gao, Feng; Walter, Eric D.; Karp, Eric M.; Luo, Jin-Yong; Tonkyn, Russell G.; Kwak, Ja Hun; Szanyi, Janos; Peden, Charles HF

2013-04-01T23:59:59.000Z

357

Surface characterization studies of TiO2 supported manganese oxide catalysts for low temperature SCR of NO with NH3  

E-Print Network [OSTI]

SCR of NO with NH3 Padmanabha Reddy Ettireddy a , Neeraja Ettireddy a , Sergey Mamedov b , Punit-impregnation method for the low temperature selective catalytic reduction (SCR) of NO with ammonia as a reductantO2 supported catalysts for low temperature SCR reaction at catalyst bed temperature 175 8C under

Boolchand, Punit

358

Phase Transformations of the Ternary System (NH4)2SO4-H2SO4-H2O and the Implications for Cirrus Cloud Formation  

E-Print Network [OSTI]

the presence of NH4 + ions in the aerosol of the upper troposphere. Low-temperature ternary phase diagrams distribution alters the cloud's radiative properties, persistence, and surface area available for heterogeneous radiation, which insulates or warms Earth, and scattering the sun's visible radiation upward, thus cooling

359

Detailed modeling and laser-induced fluorescence imaging of nitric oxide in a NH3-seeded non-premixed methane/air flame  

E-Print Network [OSTI]

non-premixed methane/air flame John B. Bell, Marcus S. Day, Joseph F. Grcar Computing Sciences-induced fluorescence imaging of nitric oxide in a NH3-seeded non-premixed methane/air flame Abstract In this paper we study the formation of NO in laminar, nitrogen diluted methane diffusion flames that are seeded

Bell, John B.

360

Interactions of elevated CO2, NH3 and O3 on mycorrhizal infection, gas exchange and N metabolism in saplings of Scots pine  

Science Journals Connector (OSTI)

Four-year-old saplings of Scots pine (Pinus sylvestris) (L.) were exposed for 11 weeks in controlled-environment chambers to charcoad-filtered air, or to charcoal-filtered air supplemented with NH3 (40 ?g m?3), O

Marta P閞ez-Soba; Thomas A Dueck; Gigliola Puppi; Pieter J. C. Kuiper

1995-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Inelastic Neutron Scattering Study of the Specific Features of the Phase Transitions in (NH4)2WO2F4  

SciTech Connect (OSTI)

Oxyfluoride (NH4)2WO2F4 has been studied by the inelastic neutron scattering method over a wide temperature range 10 300 K at two initial neutron energies of 15 and 60 meV. The role of tetrahedral ammonium groups in the mechanism of sequential phase transitions at T1 = 201 K and T2 = 160 K has been discussed.

Smirnov, Lev S [Alikhanov Institute for Theoretical and Experimental Physics, Moscow, Russia; Kolesnikov, Alexander I [ORNL; Flerov, I. N. [Kirensky Institute of Physics, Krasnoyarsk, Russia; Laptash, N. M. [Institute of Chemistry, Vladivostok, Russia

2009-01-01T23:59:59.000Z

362

Mixed quantum/classical investigation of the photodissociation of NH3,,A~ ... and a practical method for maintaining zero-point energy  

E-Print Network [OSTI]

with a classical mechanical treatment of nuclear motion on coupled potential-energy surfaces. Whereas older mixedMixed quantum/classical investigation of the photodissociation of NH3,,A~ ... and a practical method for maintaining zero-point energy in classical trajectories David Bonhommeaua and Donald G

Truhlar, Donald G

363

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

364

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

365

Surface morphology and magnetic anisotropy in (Ga,Mn)As  

E-Print Network [OSTI]

Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.

S. Piano; X. Marti; A. W. Rushforth; K. W. Edmonds; R. P. Campion; O. Caha; T. U. Schulli; V. Holy; B. L. Gallagher

2010-10-01T23:59:59.000Z

366

Operating experience with a GaAs photoemission electron source  

SciTech Connect (OSTI)

We report on the development of several operating procedures that promise to make GaAs photoemission electron sources easier to construct, more reliable to operate, and more amenable to use in dynamic vacuum systems. We describe in particular a method for ''ohmically'' heating a <100> crystal of GaAs under vacuum to approximately 600 /sup 0/C. We also discuss our observations of the role of oxygen in the activation of the crystal surface, the use of continuous cesiation, and of the performance of the crystal under varying vacuum conditions.

Tang, F.C.; Lubell, M.S.; Rubin, K.; Vasilakis, A.; Eminyan, M.; Slevin, J.

1986-12-01T23:59:59.000Z

367

An investigation on reliable passivation of GaP  

E-Print Network [OSTI]

reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index... reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index...

Greaves King, Carlos A.

2012-06-07T23:59:59.000Z

368

Interband transitions in molecular?beam?epitaxial Al x Ga1?x As/GaAs  

Science Journals Connector (OSTI)

Interband transition energies for Al x Ga1?x As layers grown by molecular?beam epitaxy(MBE) techniques have been determined using the electrolyte electroreflectance (EER) technique. The observed data fit quadratic relations for E 0 E 0+?0 E 1 and E 1+?1 to describe variations of energy with composition. Although the x values were not accurately known the internal consistency of the data is excellent. Given a single bowing parameter we show that accurate values of x can be determined. The EER technique can provide x values with an accuracy better than 0.02 and information on changes in x as small as 0.002. It is thus ideally suited for studying MBE materials.

J. L. Aubel; U. K. Reddy; S. Sundaram; W. T. Beard; James Comas

1985-01-01T23:59:59.000Z

369

Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells  

Science Journals Connector (OSTI)

Dry etch induced damage of GaAs/InGaAs/GaAs heterostructures in an electron cyclotron resonance (ECR) argon discharge has been investigated as a function of additional radio frequency self?biasing of the sample and process pressure in argon ECR discharges. We used depth resolved photoluminescence measurements to determine the influence of the etch process on the samples. We observe a decreasing damage depth for smaller bias voltages reaching its lowest value of 1.7 nm at 20 V bias and a pressure of 0.15 Pa. For lower pressures we observe a strong increase of the damage which is attributed predominantly to high energetic vacuum ultraviolet radiation from the ECR region.

T. Bickl; B. Jacobs; J. Straka; A. Forchel

1993-01-01T23:59:59.000Z

370

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

371

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect (OSTI)

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

372

Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy  

Science Journals Connector (OSTI)

The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are addressed. The axial and radial growth rates as a function of the Ga rate and As pressure indicate that on the opposite of what is observed in thin film epitaxy, the growth rate of the nanowires is arsenic limited. As a consequence, the axial growth rate of the wires can be controlled by the As4 pressure. Additionally, due to the small As4 pressure leading to nanowire growth, the deposition on the facets is very slow, leading to a much lower radial growth rate. Finally, we present a model that is able to accurately describe the presented observations and predicts a maximum length of nontapered nanowires of 40?m.

C. Colombo; D. Spirkoska; M. Frimmer; G. Abstreiter; A. Fontcuberta i Morral

2008-04-28T23:59:59.000Z

373

Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures  

Science Journals Connector (OSTI)

The carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well heterostructures have been determined as a function of the incorporated compressive strain in the (GaIn)As quantum-well layer by applying magneto-optical studies. The precise structural parameters, i.e., individual layer thicknesses, strain values, and crystalline perfection, have been determined independently by high-resolution x-ray diffraction and transmission electron microscopy. By analyzing both the allowed and forbidden optical transitions as a function of the magnetic field, detected by polarization-dependent magnetophotoluminescence excitation spectroscopy, the exciton binding energy as well as the effective in-plane electron and heavy-hole masses have been determined quantitatively as a function of strain. The theoretically predicted significant decrease of the in-plane heavy-hole mass with increasing strain has been observed. The obtained results are discussed and compared with the contradictory results reported in the literature.

M. Volk; S. Lutgen; T. Marschner; W. Stolz; E. O. G鯾el; P. C. M. Christianen; J. C. Maan

1995-10-15T23:59:59.000Z

374

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect (OSTI)

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

375

InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy  

SciTech Connect (OSTI)

We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial In{sub x}Ga{sub 1-x}As (x{approx}0.20) inserts with thicknesses from 36 to 220 nm with {+-}10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration.

Shapiro, J. N.; Lin, A.; Wong, P. S.; Scofield, A. C.; Tu, C.; Senanayake, P. N.; Mariani, G.; Liang, B. L.; Huffaker, D. L. [Department of Electrical Engineering and California Nano-Systems Institute, University of California at Los Angeles, Los Angeles, California 90095 (United States)

2010-12-13T23:59:59.000Z

376

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect (OSTI)

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

377

Structure of negatively charged muonium in n-type GaAs  

Science Journals Connector (OSTI)

Muon level-crossing resonance and muon-spin-rotation measurements on heavily doped n-type GaAs:Si and GaAs:Te show that the majority of positive muons implanted at room temperature form an isolated diamagnetic muonium center located at a high-symmetry site with Ga neighbors along the ?111? direction(s). These experiments, together with theoretical considerations, imply that negatively charged muonium is at or near the tetrahedral interstitial site with four Ga nearest-neighbor atoms. Except for zero-point energy differences, these results should model negatively charged isolated hydrogen in GaAs.

K.H. Chow; R.F. Kiefl; W.A. MacFarlane; J.W. Schneider; D.W. Cooke; M. Leon; M. Paciotti; T.L. Estle; B. Hitti; R.L. Lichti; S.F.J. Cox; C. Schwab; E.A. Davis; A. Morrobel-Sosa; L. Zavieh

1995-05-15T23:59:59.000Z

378

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density  

E-Print Network [OSTI]

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

Chen, Zhi

379

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network [OSTI]

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

380

Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy  

SciTech Connect (OSTI)

We report on the studies of optical phonon modes in nearly defect-free GaN nanowires embedded with intrinsic InGaN quantum dots by using oblique angle transmission infrared spectroscopy. These phonon modes are dependent on the nanowire fill-factor, doping densities of the nanowires, and the presence of InGaN dots. These factors can be applied for potential phonon based photodetectors whose spectral responses can be tailored by varying a combination of these three parameters. The optical anisotropy along the growth (c-) axis of the GaN nanowire contributes to the polarization agility of such potential photodetectors.

Titus, J.; Perera, A. G. U. [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)] [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States); Nguyen, H. P. T.; Mi, Z. [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)] [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)

2013-03-25T23:59:59.000Z

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

GA103 a microprogrammable processor for online filtering  

E-Print Network [OSTI]

GA103 is a 16 bit microprogrammable processor, which emulates the PDP 11 instruction set. It is based on the Am2900 slices. It allows user- implemented microinstructions and addition of hardwired processors. It will perform online filtering tasks in the NA14 experiment at CERN, based on the reconstruction of transverse momentum of photons detected in a lead glass calorimeter. (3 refs).

Calzas, A; Danon, G

1981-01-01T23:59:59.000Z

382

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical  

E-Print Network [OSTI]

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me 路 New ambition of GamificationU (Top-20 Eng/Tech*) 路

Iosup, Alexandru

383

Response of GaAs to fast intense laser pulses  

E-Print Network [OSTI]

Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

Graves, JS; Allen, Roland E.

1998-01-01T23:59:59.000Z

384

Recombination in Low-Bandgap InGaAs  

SciTech Connect (OSTI)

We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

Gfroerer, T. H.; Wanlass, M. W.

2006-01-01T23:59:59.000Z

385

High-quality InP on GaAs  

E-Print Network [OSTI]

In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

Quitoriano, Nathaniel Joseph

2006-01-01T23:59:59.000Z

386

MOCVD Growth of AlGaInN for UV Emitters  

SciTech Connect (OSTI)

Issues related to the growth of nitride-based UV emitters are investigated in this work. More than 100 times of improved in the optical efficiency of the GaN active region can be attained with a combination of raising the growth pressure and introducing a small amount of indium. The unique issue in the UV emitter concerning the use of AlGaN for confinement and the associated tensile cracking is also investigated. They showed that the quaternary AlGaInN is potentially capable of providing confinement to GaN and GaN:In active regions while maintaining lattice matching to GaN, unlike the AlGaN ternary system.

Crawford, Mary; Han, Jung

1999-07-07T23:59:59.000Z

387

Projected Performance of Three- and Four-Junction Devices Using GaAs and GaInP  

E-Print Network [OSTI]

This paper explores the efficiencies expected for three- and four-junction devices for both space and terrestrial applications. For space applications, the effects of temperature and low concentration are investigated. For terrestrial applications, a concentration of 500 suns is assumed and the theoretical efficiencies are calculated as a function of spectral variations including the effects of air mass, turbidity, and water-vapor content. INTRODUCTION Ga 0.5 In 0.5 P/GaAs two-terminal, two-junction solar cells, invented and developed at the National Renewable Energy Laboratory, are in production at both TECSTAR and Spectrolab. The immediate market for these devices is in space; a future (potentially larger) market is terrestrial concentrator systems. The next-generation cells will add additional junction(s) in order to increase the efficiency. Work on a three-junction cell using an active Ge junction under the Ga 0.5 In 0.5 P/GaAs dual-junction cell has already been reported [1]. Ho...

Gainp; S. R. Kurtz; Sarah R. Kurtz; D. Myers; D. Myers; J.M. Olson; J. M. Olson

1997-01-01T23:59:59.000Z

388

Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices  

E-Print Network [OSTI]

of thermoelectric energy conversion devices depends on the thermoelectric figure of merit ZT of a material, which- troduced charge carriers in the ErAs:InGaAs regions of 0, 2 1018 , 4 1018 , and 8 1018 cm-3 , respectively. There- fore, the effective carrier concentrations in the four samples were 2 1018 , 4 1018 , 6 1018

389

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

390

Better Buildings Neighborhood Program: Better Buildings Partners  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Better Better Buildings Partners to someone by E-mail Share Better Buildings Neighborhood Program: Better Buildings Partners on Facebook Tweet about Better Buildings Neighborhood Program: Better Buildings Partners on Twitter Bookmark Better Buildings Neighborhood Program: Better Buildings Partners on Google Bookmark Better Buildings Neighborhood Program: Better Buildings Partners on Delicious Rank Better Buildings Neighborhood Program: Better Buildings Partners on Digg Find More places to share Better Buildings Neighborhood Program: Better Buildings Partners on AddThis.com... Better Buildings Residential Network Progress Stories Interviews Videos Events Quick Links to Partner Information AL | AZ | CA | CO | CT FL | GA | IL | IN | LA ME | MD | MA | MI | MO NE | NV | NH | NJ | NY

391

Better Buildings Neighborhood Program: Jacksonville, Florida  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Jacksonville, Jacksonville, Florida to someone by E-mail Share Better Buildings Neighborhood Program: Jacksonville, Florida on Facebook Tweet about Better Buildings Neighborhood Program: Jacksonville, Florida on Twitter Bookmark Better Buildings Neighborhood Program: Jacksonville, Florida on Google Bookmark Better Buildings Neighborhood Program: Jacksonville, Florida on Delicious Rank Better Buildings Neighborhood Program: Jacksonville, Florida on Digg Find More places to share Better Buildings Neighborhood Program: Jacksonville, Florida on AddThis.com... Better Buildings Residential Network Progress Stories Interviews Videos Events Quick Links to Partner Information AL | AZ | CA | CO | CT FL | GA | IL | IN | LA ME | MD | MA | MI | MO NE | NV | NH | NJ | NY NC | OH | OR | PA | SC

392

Better Buildings Neighborhood Program: Indianapolis, Indiana  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Indianapolis, Indianapolis, Indiana to someone by E-mail Share Better Buildings Neighborhood Program: Indianapolis, Indiana on Facebook Tweet about Better Buildings Neighborhood Program: Indianapolis, Indiana on Twitter Bookmark Better Buildings Neighborhood Program: Indianapolis, Indiana on Google Bookmark Better Buildings Neighborhood Program: Indianapolis, Indiana on Delicious Rank Better Buildings Neighborhood Program: Indianapolis, Indiana on Digg Find More places to share Better Buildings Neighborhood Program: Indianapolis, Indiana on AddThis.com... Better Buildings Residential Network Progress Stories Interviews Videos Events Quick Links to Partner Information AL | AZ | CA | CO | CT FL | GA | IL | IN | LA ME | MD | MA | MI | MO NE | NV | NH | NJ | NY NC | OH | OR | PA | SC

393

Phase transitions in C2O4H NH4 1/2H2O : a light scattering study of the high pressure phase  

E-Print Network [OSTI]

1711 Phase transitions in C2O4H NH4 1/2H2O : a light scattering study of the high pressure phase J) R茅sum茅. 2014 AHO pr茅sente, 脿 la pression ordinaire, une transition de phase ferro茅lastique du deuxi猫me phase III soit, comme la phase II, due 脿 une mise en ordre des ions ammoniums : leur orientation serait

Paris-Sud XI, Universit茅 de

394

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a  

E-Print Network [OSTI]

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C Richard R. King,2 and Harry A. Atwater1 1 California Institute of Technology, Pasadena, California 91125, USA 2 Spectrolab, Inc., Sylmar, California 91342, USA 3 Aonex Technologies, Pasadena, California 91106

Atwater, Harry

395

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS  

E-Print Network [OSTI]

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS Robyn C. Law 1 1 Spectrolab, Inc., A Boeing Company, Sylmar, California 91342, USA 2 California Institute of Technology, Pasadena, California 91125, USA ABSTRACT Spectrolab has demonstrated the first lattice matched In

Atwater, Harry

396

The evolution of Ga and As core levels in the formation of Fe/GaAs (001):A high resolution soft x-ray photoelectron spectroscopic study  

SciTech Connect (OSTI)

A high resolution soft x-ray photoelectron spectroscopic study of Ga and As 3d core levels has been conducted for Fe/GaAs (001) as a function of Fe thickness. This work has provided unambiguous evidence of substrate disrupting chemical reactions induced by the Fe overlayer--a quantitative analysis of the acquired spectra indicates significantly differing behavior of Ga and As during Fe growth, and our observations have been compared with existing theoretical models. Our results demonstrate that the outdiffusing Ga and As remain largely confined to the interface region, forming a thin intermixed layer. Whereas at low coverages Fe has little influence on the underlying GaAs substrate, the onset of substrate disruption when the Fe thickness reaches 3.5 Angstrom results in major changes in the energy distribution curves (EDCs) of both As and Ga 3d cores. Our quantitative analysis suggests the presence of two additional As environments of metallic character: one bound to the interfacial region and another which, as confirmed by in situ oxidation experiments, surface segregates and persists over a wide range of overlayer thickness. Analysis of the corresponding Ga 3d EDCs found not two, but three additional environments--also metallic in nature. Two of the three are interface resident whereas the third undergoes outdiffusion at low Fe coverages. Based on the variations of the integrated intensities of each component, we present a schematic of the proposed chemical makeup of the Fe/GaAs (001) system.

Thompson, Jamie; Neal, James; Shen, Tiehan; Morton, Simon; Tobin, James; Waddill, George Dan; Matthew, Jim; Greig, Denis; Hopkinson, Mark

2008-07-14T23:59:59.000Z

397

Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers  

Science Journals Connector (OSTI)

We investigate spectra of InGaN/GaN quantum well (QW) light-emitting diode (LED) structures with heavily doped barriers at different excitation levels. We model the spectral shape and energy position in frames of dominating mechanism of free electron ... Keywords: Band filling, Doped barriers, Emission spectra, Quantum well

B. Arnaudov; D. S. Domanevskii; S. Evtimova; Ch. Ivanov; R. Kakanakov

2009-02-01T23:59:59.000Z

398

Effects of internal fields on deep-level emission in InGaN/GaN quantum-well light-emitting diodes  

Science Journals Connector (OSTI)

We report on the important role played by internal quantum well (QW) fields in the anomalous inversion of capacitance transients in InGaN/GaN multi-QW light-emitting diodes (LEDs). This effect was observed by deep-level transient spectroscopy (DLTS) ... Keywords: Deep level, III-Nitride, Internal fields, Quantum well

L. Rigutti; A. Castaldini; A. Cavallini

2009-02-01T23:59:59.000Z

399

Light output enhancement of InGaN/GaN light-emitting diodes with contrasting indium tin-oxide nanopatterned structures  

Science Journals Connector (OSTI)

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square ...

Sang Hyun Jung; Keun Man Song; Young Su Choi; Hyeong-Ho Park; Hyun-Beom Shin; Ho Kwan Kang; Jaejin Lee

2013-01-01T23:59:59.000Z

400

Direct and indirect exciton states in GaAs-(Ga, Al)As double quantum wells under crossed electric and magnetic fields  

Science Journals Connector (OSTI)

A theoretical study of the direct and indirect exciton states in GaAs/Ga1-xAlxAs coupled double quantum wells under crossed electric and magnetic fields is presented. The setup of the system under consideration consists of an ... Keywords: 71.55.Eq, 73.20.Mf, 73.21.Fg, Diamagnetic shifts, Double quantum-wells, Magnetoexcitons

L. E. Oliveira; M. de Dios-Leyva; C. A. Duque

2008-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Exciton diamagnetic shift in GaAs/Ga1-xAlxAs quantum wells under in-plane magnetic fields  

Science Journals Connector (OSTI)

Using a variational procedure in the effective-mass and parabolic-band approximations we investigate the effects of in-plane magnetic fields on the exciton states in single GaAs/Ga1-xAlxAs quantum wells. Exciton properties ... Keywords: 71.55.Eq, 73.20.Mf, 73.21.Fg, Diamagnetic shifts, Magnetoexcitons, Quantum wells

C. A. Duque; M. de Dios-Leyva; L. E. Oliveira

2008-03-01T23:59:59.000Z

402

Determination of70Ge(n,p)70Ga and74Ge(n,p)74Ga reaction cross sections for a fission neutron spectrum  

Science Journals Connector (OSTI)

The fission neutron spectrum averaged cross-sections for the reactions70Ge(n,p)70Ga and74Ge(n,p)74Ga have been determined. The averages of four determinations are, respectively, (3.100.30) mb and (0.009380.0005...

I. M. Cohen; A. J. Kestelman; J. C. Furnari

1996-03-14T23:59:59.000Z

403

Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate  

SciTech Connect (OSTI)

Simultaneous growth of ?111?{sub B} free-standing and 盵110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy (111){sub B} interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain (111){sub B} interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side (111){sub B} interfaces with the surrounding GaAs(P) material during the lateral nanowire growth.

Sun, Wen; Xu, Hongyi [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia)] [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Guo, Yanan [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Gao, Qiang; Hoe Tan, Hark; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)] [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Zou, Jin, E-mail: j.zou@uq.edu.au [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia QLD 4072 (Australia)

2013-11-25T23:59:59.000Z

404

Hydrothermal synthesis and structure of an open framework Co0.7Zn1.3(PO4)2(NH3朇H2CH2NH3) and Co6.2(OH)4(PO4)4Zn1.80, a new adamite type phase  

Science Journals Connector (OSTI)

The hydrothermal reaction of cobalt(II)oxalate di-hydrate, zinc oxide, and triethyl-orthophosphate, using 1,2-diaminoethane as structure directing template in water, produced two major crystal phases in almost equal amount: the purple crystals of [NH3朇H2CH2NH3][Co0.7Zn1.3(PO4)2] (1) and the red burgundy crystals of Co6.2(OH)4(PO4)4Zn1.80 (2), a new adamite type phase. The structure of [NH3朇H2CH2NH3] [Co0.7Zn1.3(PO4)2] (1) exhibits a 3D open framework built from PO4 and (Co/Zn)O4 tetrahedra, and (Co/Zn)O5 trigonal bipyramids, forming two major channels, an 8-membered ring channel and a 16-membered ring channel, that host the ethanediammonium ions. The Co6.2(OH)4(PO4)4Zn1.80 (2) is isomorphous with adamite-type M2(OH)XO4 structure, with a condensed vertex and edge sharing network of (Co/Zn)O5, and distorted CoO6, and PO4 subunits. The cobalt preference for higher coordination numbers is displayed in this structure, where the octahedral sites are wholly occupied by cobalt. Thermal analysis confirmed that these compounds display high thermal stability.

Aderemi Oki; Matthias Zeller; Yaneth Coranza; Jose Luevano; Allen D. Hunter

2007-01-01T23:59:59.000Z

405

Dynamic Model of Hydrogen in GaN  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Dynamic Model of Hydrogen in GaN by S. M. Myers and A. F. Wright Motivation-Hydrogen is incorporated into p-type GaN during MOCVD growth, producing highly stable passivation of the Mg acceptors. Complete acceptor activation by thermal H release requires temperatures that threaten material integrity, prompting compromises in device processing. At lower temperatures, forward bias of p-n junctions or electron-beam irradiation produces a metastable, reversible activation without H release. To understand and control such effects, we are developing a mathematical model of H behavior wherein state energies from density-functional theory are employed in diffusion-reaction equations. Previously, we used the greatly simplifying assumptions of local equilibrium among states

406

THE c2d SPITZER SPECTROSCOPIC SURVEY OF ICES AROUND LOW-MASS YOUNG STELLAR OBJECTS. IV. NH{sub 3} AND CH{sub 3}OH  

SciTech Connect (OSTI)

NH{sub 3} and CH{sub 3}OH are key molecules in astrochemical networks leading to the formation of more complex N- and O-bearing molecules, such as CH{sub 3}CN and CH{sub 3}OCH{sub 3}. Despite a number of recent studies, little is known about their abundances in the solid state. This is particularly the case for low-mass protostars, for which only the launch of the Spitzer Space Telescope has permitted high-sensitivity observations of the ices around these objects. In this work, we investigate the {approx}8-10 {mu}m region in the Spitzer IRS (InfraRed Spectrograph) spectra of 41 low-mass young stellar objects (YSOs). These data are part of a survey of interstellar ices in a sample of low-mass YSOs studied in earlier papers in this series. We used both an empirical and a local continuum method to correct for the contribution from the 10 {mu}m silicate absorption in the recorded spectra. In addition, we conducted a systematic laboratory study of NH{sub 3}- and CH{sub 3}OH-containing ices to help interpret the astronomical spectra. We clearly detect a feature at {approx}9 {mu}m in 24 low-mass YSOs. Within the uncertainty in continuum determination, we identify this feature with the NH{sub 3} {nu}{sub 2} umbrella mode and derive abundances with respect to water between {approx}2% and 15%. Simultaneously, we also revisited the case of CH{sub 3}OH ice by studying the {nu}{sub 4} C-O stretch mode of this molecule at {approx}9.7 {mu}m in 16 objects, yielding abundances consistent with those derived by Boogert et al. based on a simultaneous 9.75 and 3.53 {mu}m data analysis. Our study indicates that NH{sub 3} is present primarily in H{sub 2}O-rich ices, but that in some cases, such ices are insufficient to explain the observed narrow FWHM. The laboratory data point to CH{sub 3}OH being in an almost pure methanol ice, or mixed mainly with CO or CO{sub 2}, consistent with its formation through hydrogenation on grains. Finally, we use our derived NH{sub 3} abundances in combination with previously published abundances of other solid N-bearing species to find that up to 10%-20% of nitrogen is locked up in known ices.

Bottinelli, Sandrine; Van Dishoeck, Ewine F.; Lahuis, Fred [Leiden Observatory, Leiden University, P.O. Box 9513, NL 2300 RA Leiden (Netherlands); Boogert, A. C. Adwin [IPAC, NASA Herschel Science Center, Mail Code 100-22, California Institute of Technology, Pasadena, CA 91125 (United States); Bouwman, Jordy; Beckwith, Martha; Oeberg, Karin I.; Linnartz, Harold [Raymond and Beverly Sackler Laboratory for Astrophysics, Leiden Observatory, Leiden University, P.O. Box 9513, NL 2300 RA Leiden (Netherlands); Pontoppidan, Klaus M.; Blake, Geoffrey A. [California Institute of Technology, Division of Geological and Planetary Sciences, Pasadena, CA 91125 (United States); Evans, Neal J., E-mail: sandrine.bottinelli@cesr.f [Department of Astronomy, University of Texas at Austin, 1 University Station C1400, Austin, TX 78712-0259 (United States)

2010-08-01T23:59:59.000Z

407

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy  

SciTech Connect (OSTI)

Dilute nitride GaNAsP thin films were grown via a GaAsP metamorphic buffer on GaP(100) substrate with gas-source molecular beam epitaxy. The compositions of this III-V-V-V compound were determined by channeling Rutherford backscattering spectroscopy and nuclear reaction analysis. Photoreflectance shows two distinctive transitions from the valence band to the split conduction bands due to N incorporation. Photoluminescence and optical absorption show the fundamental bandgap of Ga(N)AsP is largely tailored by the small amount of N. The observed multiband characteristics and the bandgap tunability of GaNAsP are two merits that fit into the intermediate-band solar cell roadmap, and GaNAsP of high crystal quality provides a strong candidate for intermediate band solar cell materials.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Yu, K. M.; Walukiewicz, W. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)] [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kudrawiec, R. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland); Luce, A. V. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Ting, M. [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)] [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2013-03-18T23:59:59.000Z

408

Ga configurations in hydrogenated amorphous silicon as studied by x-ray photoemission spectroscopy  

Science Journals Connector (OSTI)

Samples of crystalline silicon and glow-discharge-deposited hydrogenated amorphous silicon were doped with gallium by low-energy (4-keV) ion implantation. X-ray photoemission spectroscopy was used to study the chemical-bonding states of the Ga. From Ga 3d core-level studies, we found that elementary interstitial, threefold-coordinated, and fourfold-coordinated Ga coexist in the ion-implanted and annealed amorphous silicon network. The percentage of activated threefold- and fourfold-coordinated Ga atoms is found to increase with increasing annealing temperature, prior to crystallization. The energy released by the amorphous silicon lattice upon annealing contributes to the activation of the gallium from the elementary state to the threefold- or fourfold-coordinated state. No evidence of Ga-H bond formation is found. The percentage of fourfold-coordinated Ga, which we call the doping efficiency, ranges from 5% to 10%, depending upon the thermal treatment.

Z. H. Lu; S. Poulin-Dandurand; E. Sacher; A. Yelon

1990-09-15T23:59:59.000Z

409

Accurate characterization and improvement of GaAs microstrip attenuation  

E-Print Network [OSTI]

Mason Carroll, B. S. , Rose-Hulman Institute of Technology Chair of Advisory Committee: Dr. Kai Chang Microstrip transmission lines are widely used in microv, ave circuits. The high frequencies cause the microstrip characteristics, especially... OF CONTENTS . . LIST OF FIGURES LIST OF TABLES. . CHAPTER I INTRODUCTION . . I. A Introduction. I. B Thesis Research Il GaAs MICROSTRlp ATTENUATION . II. A Characterization ol'Transmission Line Attenuation. . . . II. A. I Introduction. II. A. 2...

Carroll, James Mason

2012-06-07T23:59:59.000Z

410

InGaAsSb thermophotovoltaic diode physics evaluation  

SciTech Connect (OSTI)

The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

1998-06-01T23:59:59.000Z

411

Relation between the metastability of EL2 and the photosensitivity of local vibrational modes in semi-insulating GaAs  

Science Journals Connector (OSTI)

Recent infrared spectroscpic observations of local vibrational mode absorptions have revealed a number of photosensitive centers in semi-insulating GaAs. They include (OVAs) center which has three modes at 730 cm-1 (A), 715 cm-1 (B), and 714 cm-1 (C), respectively, a suggested NH center related to a line at 983 cm-1 (X1), and centers related to hydrogen, such as (H-O) or (H-N) bonds, corresponding to a group of peaks in the region of 29003500 cm-1. The photosensitivity of various local vibration centers was observed to have similar time dependence under near-infrared illumination and was suggested to be due to their charge-state interconversion. Mainly described in this work is the effect of the 1.25-eV illumination. It is confirmed that this photoinduced kinetic process results from both electron capture and hole capture, which are closely related to the photoionization behavior and metastability of the EL2 center.

C. Y. Song, B. Pajot, W. K. Ge, and D. S. Jiang

1995-08-15T23:59:59.000Z

412

(22) reconstructions of the {111} polar surfaces of GaAs  

Science Journals Connector (OSTI)

Ab initio total-energy calculations were used to examine (22) reconstruction models for the (111) and (1񯲁) surfaces of GaAs. For the (111) surface the lowest-energy Ga-vacancy geometry is determined; several mechanisms for Ga-vacancy formation are examined and other reconstructions are discussed. For the (1񯲁) surface it is shown that the As-vacancy model is unlikely and other geometries are considered.

E. Kaxiras; Y. Bar-Yam; J. D. Joannopoulos; K. C. Pandey

1986-03-15T23:59:59.000Z

413

Synthesis and Structure of Sr3GaN3 and Sr6GaN5:? Strontium Gallium Nitrides with Isolated Planar [GaN3]6- Anions  

Science Journals Connector (OSTI)

Synthesis and Structure of Sr3GaN3 and Sr6GaN5:? Strontium Gallium Nitrides with Isolated Planar [GaN3]6- Anions ... 9-19 In most cases, an alkaline earth metal is introduced into a Na melt to enhance the solubility of nitrogen, and is incorporated in the nitride product. ... The container was sealed by welding its open end in an argon atmosphere with active water-cooling so that NaN3 did not decompose due to heating during the welding. ...

Dong Gon Park; Zolt醤 A. G醠; Francis J. DiSalvo

2003-02-13T23:59:59.000Z

414

Ga[sub 13], Al[sub 13], GaAl[sub 12], and chromium-pillared montmorillonites: Acidity and reactivity for cumene conversion  

SciTech Connect (OSTI)

A comparison has been made of the acidic characters of a series of metal polyoxocation pillar interlayered clay minerals (M-PILCs) by studying the infrared spectra of adsorbed pyridine. These comparisons were made for Ga[sub 13]-, Al[sub 13]- and GaAl[sub 12]-PILCs, and for Na[sup +]-exchanged montmorillonite (Na-STx-1). The Ga[sub 13]-PILC, was found to exhibit the strongest Lewis acid sites, followed by the AL[sub 13]-, and GaAl[sub 12]-PILCs and then by the Ns-STx-1. The relative number of Lewis acid sites, however, was found to be much greater for the GaAl[sub 12]-PILC, particularly after calcination at higher temperatures, indicating that the Ga[sub 13] Lewis acid sites did not have as high a thermal stability. The Broensted acidic characters for the pillared clays depend on the pillar, and follow the general decreasing order of abundance of GaAl[sub 12]-, Al[sub 13], and Ga[sub 13]-PILC when expressed as absorbance per unit mass. When the acidities per unit surface area were estimated, however, the Ga[sub 13]-PILCs were found to have the greatest number. This indicated that while the pillars contribute to the PILC acidities primarily through increasing the exposed phyllosilicate sheet surface areas, there is also a significant effect arising from the acidic characters of the pillars themselves. The dehydrogenation activities of Ga[sub 13]-, GaAl[sub 12]-, Al[sub 13]-, and Na-STx-1, in addition to a chromium polyoxocation-PILC, were compared by observing the products formed upon reaction with the model compound cumene. The Ga[sub 13]- and chromium-PILCs and the Na-Stx-1 exhibited almost exclusively dehydrogenation activities, whereas the Al[sub 13]- and GaAl[sub 12]-PILCs exhibited both cracking and dehydrogenation behaviors. These results prove that the pillars themselves can very strongly effect the catalytic activities of the PILCs. 3 refs., 6 figs., 2 tabs.

Bradley, S.M.; Kydd, R.A. (Univ. of Calgary, Alberta (Canada))

1993-05-01T23:59:59.000Z

415

Carrier-induced change in refractive index of InP, GaAs, and InGaAsP  

SciTech Connect (OSTI)

The authors have theoretically estimated the change in refractive index {Delta}{ital n} produced by injection of free carriers in InP, GaAs, and InGaAsP. Bandfilling (Burstein-Moss effect), band-gap shrinkage, and free-carrier absorption (plasma effect) were included. Carrier concentrations of 10{sup 16}/cm{sup 3} to 10{sup 19}/cm{sup 3} and photon energies of 0.8 to 2.0 eV were considered. Predictions of {Delta}{ital n} are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as 10{sup {minus} 2} are predicted for carrier concentrations of 10{sup 18}/cm{sup 3}, suggesting that low-loss optical phase modulators and switches using carrier injection are feasible in these materials.

Bennett, B.R. (Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA (US)); Soref, R.A. (Solid State Sciences Directorate, Rome Air Development Center, Hanscom Air Force Base, Bedford, MA (US)); Del Alamo, J.A. (Dept. of Electrical Engineering and Computer Science, Massachussets Institute of Technology, Cambridge, MA (US))

1990-01-01T23:59:59.000Z

416

Photoluminescence kinetics of indirect excitons in GaAs/AlxGa1-xAs coupled quantum wells  

Science Journals Connector (OSTI)

Photoluminescence (PL) kinetics of long-lifetime indirect excitons in a GaAs/AlxGa1-xAs coupled quantum well characterized by a small in-plane random potential was studied at temperatures 1.5<~T<~15 K for a wide range of exciton densities. Strong deviations of the indirect exciton PL kinetics from monoexponential PL rise/decay were observed at low temperatures and high exciton densities. In particular, right after the excitation is switched off, the spectrally integrated indirect exciton PL intensity increased sharply. Simultaneously, the indirect exciton energy distribution was observed to narrow significantly. The observed increase in intensity is attributed to the sharp increase of occupation of the optically active exciton states. The energy distribution narrowing is explained in terms of the phonon mediated exciton energy relaxation in momentum space and in the in-plane random potential.

L. V. Butov, A. Imamoglu, A. V. Mintsev, K. L. Campman, and A. C. Gossard

1999-01-15T23:59:59.000Z

417

Sensitivity of absorption spectra to surface segregation in InGaN/GaN quantum well structures  

SciTech Connect (OSTI)

We investigate the influence of the indium surface segregation on absorption spectra in InGaN/GaN quantum well structures having different indium amount. Results of the mathematical modeling show that such influence is more pronounced in quantum well structures with high indium amounts. The origin of this effect is related to the interplay between the indium surface segregation and internal electrostatic fields. Our theoretical analysis is performed using semiconductor Bloch equations within the Hartree-Fock approximation including into consideration excitonic effects. Results of the global sensitivity analysis evidence that the influence of the indium surface segregation is less than one order of magnitude in comparison with the impact of the quantum-well width and indium molar fraction. Also, the influence of the indium surface segregation is not the same for each interface of the quantum well.

Klymenko, M. V.; Shulika, O. V. [Lab. Photonics, Kharkov National University of Radio Electronics, Kharkov, 61166 (Ukraine); Sukhoivanov, I. A. [Department of Electronics, Engineering Division, University of Guanajuato, Salamanca, Guanajuato, 36885 (Mexico)

2014-05-15T23:59:59.000Z

418

Band offsets from two special GaAs-AlxGa1-xAs quantum-well structures  

Science Journals Connector (OSTI)

Half-parabolic quantum wells and two-stepped quantum wells have been grown by molecular-beam epitaxy with the GaAs-AlxGa1-xAs system and investigated by photoluminescence techniques to determine the band offsets at the heterointerfaces. Both structures provide interband transitions that are sensitive to the partitioning of the energy-gap discontinuity ?Eg=?Ec+?Ev between the conduction and valence bands. It is concluded that the data require valence-band offsets ?Ev equal to 38% and 41% of ?Eg for the half-parabolic wells and the two-stepped wells, respectively. These band offsets are therefore in agreement with the trend of other recent determinations.

R. C. Miller; A. C. Gossard; D. A. Kleinman

1985-10-15T23:59:59.000Z

419

ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures  

SciTech Connect (OSTI)

Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generated defects. The irradiation with up to 90 pulses at 65-150 mJ/cm{sup 2} allowed to generate an array of 1.2x1 mm{sup 2} sites of QW intermixed material, with bandgap energy blueshifted up to 107 nm. We discuss the mechanism and advantages of this approach for postgrowth wafer level fabrication of multibandgap QW material.

Genest, Jonathan; Beal, Romain; Aimez, Vincent; Dubowski, Jan J. [Department of Electrical and Computer Engineering, Center of Excellence for Information Engineering, Universite de Sherbrooke, Sherbrooke, Quebec J1K 2R1 (Canada)

2008-08-18T23:59:59.000Z

420

E-Print Network 3.0 - algorithm ga technique Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for: algorithm ga technique Page: << < 1 2 3 4 5 > >> 1 GAMMA: Global Arrays Meets MATLAB Rajkiran Panuganti Summary: is a straightforward implementa- tion of a standard...

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421

Band-structure analysis from photoreflectance spectroscopy in (Ga,Mn)As  

SciTech Connect (OSTI)

Modulation photoreflectance spectroscopy has been applied to study the band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn content. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap-transition energy in the (Ga,Mn)As layers with increasing Mn content are interpreted in terms of a disordered valence band, extended within the band gap, formed, in highly Mn-doped (Ga,Mn)As, as a result of merging the Mn-related impurity band with the host GaAs valence band.

Yastrubchak, Oksana; Gluba, Lukasz; Zuk, Jerzy [Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin (Poland); Wosinski, Tadeusz; Andrearczyk, Tomasz; Domagala, Jaroslaw Z. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Sadowski, Janusz [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland and MAX-Lab, Lund University, 22100 Lund (Sweden)

2013-12-04T23:59:59.000Z

422

Assessment of the Passivation Capabilities of Two Different Covalent Chemical Modifications on GaP(100)  

Science Journals Connector (OSTI)

With respect to toxicity, the UDA-functionalized GaP provided better passivation which was confirmed by less gallium leaching into water and saline solutions. ... Due to its promising characteristics for device fabrication, gallium arsenide (GaAs) has been extensively studied and the formation of self-assembled monolayers has been of interest. ... A general increase in the Ga/P ratio can be seen in the surfaces exposed to solutions compared to the clean surface which is attributed to the greater solubility of the phosphorus oxide (P2O5) compared to the gallium oxide (Ga2O3). ...

David Richards; Dmitry Zemlyanov; Albena Ivanisevic

2010-02-03T23:59:59.000Z

423

Interface Reactions and Electrical Characteristics of Au/GaSb Contacts  

SciTech Connect (OSTI)

The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{sub 2} compound and several Au-Ga phases are produced. Phase transitions occur toward higher Ga concentration with increasing annealing temperatures. Furthermore, the depth of the contact also increases with increased annealing temperature. They found that the AuSb{sub 2} compound forms on the GaSb surface, with the compound crystal partially ordered with respect to the substrate. The transition of Schottky- to ohmic-contact behavior in Au/n-type GaSb occurs simultaneously with the formation of the AuGa compound at about a 250 C annealing temperature. This ohmic contact forms without the segregation of dopants at the metallic compound/GaSb interface. Therefore it is postulated that transition from Schottky- to ohmic-contact behavior is obtained through a series of tunneling transitions of electrons through defects in the depletion region in the Au/n-type GaSb contacts. Contact resistivities of 6-7 x 10{sup -6} {Omega}-cm{sup 2} were obtained with the annealing temperature between 300 and 350 C for 30 seconds. In Au/p-type GaSb contacts, the resistivity was independent of the annealing temperature. This suggested that the carrier transport in p-type contact dominated by thermionic emission.

H. Ehsani; R.J. Gutmann; G.W. Charache

2000-07-07T23:59:59.000Z

424

Si in GaN -- On the nature of the background donor  

SciTech Connect (OSTI)

A characterization of the Si impurity in GaN is performed by Raman spectroscopy. Applying hydrostatic pressure up to 25 GPa the authors study the behavior of the LO phonon-plasmon mode in a series of high mobility Si doped GaN films. In contrast to earlier results on unintentionally doped bulk GaN crystals no freeze out of the free carriers could be observed in Si doped samples. The authors find that Si is a shallow hydrogenic donor throughout the pressure range studied. This result positively excludes Si incorporation as a dominant source of free electrons in previously studied bulk GaN samples.

Wetzel, C.; Chen, A.L.; Suski, T.; Ager, J.W. III; Walukiewicz, W. [Lawrence Berkeley National Lab., CA (United States). Materials Science Div.

1996-08-01T23:59:59.000Z

425

Structural defects in GaN revealed by Transmission Electron Microscopy  

SciTech Connect (OSTI)

This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

Liliental-Weber, Zuzanna

2014-04-18T23:59:59.000Z

426

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics  

Science Journals Connector (OSTI)

An n++-GaAs/p++-AlGaAs tunnel junction with a peak current density of 10?100燗燾m?2 is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10?000爏uns is below 5爉V. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500燗燾m?2 and a voltage drop at 10?000爏uns of around 20爉V, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations.

I Garc韆; I Rey-Stolle; C Algora

2012-01-01T23:59:59.000Z

427

Growth of 5 mm GaN Single Crystals at 750 癈 from an Na?Ga Melt  

Science Journals Connector (OSTI)

Laser diodes using GaN-based III?V nitrides have been developed, and nitride semiconductor devices are now of considerable interest. ... When the inclusions were exposed to air, they reacted with water vapor in air and produced sodium hydroxide and small gallium metal droplets at the fracture surface of the crystal. ... The solubility of nitrogen in liquid sodium is extremely low (7.1 10-9 mol % N at 600 癈). ...

Masato Aoki; Hisanori Yamane; Masahiko Shimada; Seiji Sarayama; Francis J. DiSalvo

2001-02-03T23:59:59.000Z

428

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors  

SciTech Connect (OSTI)

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-03-10T23:59:59.000Z

429

Local indium segregation and band structure in high efficiencygreen light emitting InGaN/GaN diodes  

SciTech Connect (OSTI)

GaN/InGaN light emitting diodes (LEDs) are commercialized for lighting applications because of the cost efficient way that they produce light of high brightness. Nevertheless, there is significant room for improving their external emission efficiency from typical values below 10 percent to more than 50 percent, which are obtainable by use of other materials systems that, however, do not cover the visible spectrum. In particular, green-light emitting diodes fall short in this respect, which is troublesome since the human eye is most sensitive in this spectral range. In this letter advanced electron microscopy is used to characterize indium segregation in InGaN quantum wells of high-brightness, green LEDs (with external quantum efficiency as high as 15 percent at 75 A/cm2). Our investigations reveal the presence of 1-3 nm wide indium rich clusters in these devices with indium concentrations as large as 0.30-0.40 that narrow the band gap locally to energies as small as 2.65 eV.

Jinschek, Joerg R.; Erni, Rolf; Gardner, Nathan F.; Kim, AndrewY.; Kisielowski, Christian

2004-11-23T23:59:59.000Z

430

Deep Levels in p-Type InGaAsN Lattice Matched to GaAs  

SciTech Connect (OSTI)

Deep level transient spectroscopy (DLTS) measurements were utilized to investigate deep level defects in metal-organic chemical deposition (MOCVD)-grown unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the bandgap, with a dominant hole trap at E{sub v} + 0.10 eV. Post-growth annealing simplified the deep level spectra, enabling the identification of three distinct hole traps at 0.10 eV, 0.23 eV, and 0.48 eV above the valence band edge, with concentrations of 3.5 x 10{sup 14} cm{sup {minus}3}, 3.8 x 10{sup 14} cm{sup {minus}3}, and 8.2 x 10{sup 14} cm{sup {minus}3}, respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4 x 10{sup 14} cm{sup {minus}3} in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future.

Allerman, A.A.; Jones, E.D.; Kaplar, R.J.; Kurtz, S.R.; Kwon, D.; Ringel, S.A.

1999-03-02T23:59:59.000Z

431

Avalanche buildup time of an InP/InGaAsP/InGaAs APD at high gain  

SciTech Connect (OSTI)

Under a high-gain operating condition, the presence of a multiplication process in the InGaAs(P) regions of an InP/InGaAsP/InGaAs avalanche photodiode having a structure of separated absorption and multiplication regions (SAM-APD) could lead to significant enhancement of the avalanche buildup time. As a result, the bandwidth of the device could be reduced considerably. The dependence of the avalanche multiplication factor and the intrinsic response time on the reverse bias voltage, the heterointerface field, the doping concentrations, and the width of the InP layer are examined in detail for the case in which hole injection is assumed. It is shown, for example, that for a fixed value of doping concentrations, the reduction of the excess noise factor and the enhancement of the gain-bandwidth product of the device can be made at the same time by a proper increase of the width of the InP layer.

Hsieh, H.C.; Sargeant, W. (Iowa State Univ. of Science and Technology, Ames, IA (USA). Dept. of Electrical Engineering)

1989-09-01T23:59:59.000Z

432

Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices  

SciTech Connect (OSTI)

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

2003-06-16T23:59:59.000Z

433

Critical size for the generation of misfit dislocations and their effects on electronic properties in GaAs nanosheets on Si substrate  

E-Print Network [OSTI]

-Queisser limit6 for the solar-cell efficiency. Recently, NWs of various semi- conductors such as GaAs/AlGaAs,7

Southern California, University of

434

IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 4, APRIL 2006 397 Design and Performance of an InGaAsInP  

E-Print Network [OSTI]

, focusing on the effect of the critical InGaAsP grading layer between the narrow-gap InGaAs absorption layer

Buller, Gerald S.

435

Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions  

SciTech Connect (OSTI)

This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.

Piprek, Joachim, E-mail: piprek@nusod.org [NUSOD Institute LLC, P.O. Box 7204, Newark, Delaware 19714 (United States)

2014-02-03T23:59:59.000Z

436

Enhancing the Light Extraction of InGaN Light-Emitting Diodes by Patterning the Dicing Streets  

Science Journals Connector (OSTI)

Patterning the dicing streets technology was used to define the high extraction efficiency region of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The external quantum...

Lin, Hung Cheng; Tseng, Yen Chun; Chyi, Jen Inn; Lee, Chia Ming

437

Mitigation of Hydrogen Capacity Losses during Pressure Cycling of the Li3N朒 System by the Addition of Nitrogen  

Science Journals Connector (OSTI)

Mitigation of Hydrogen Capacity Losses during Pressure Cycling of the Li3N朒 System by the Addition of Nitrogen ... We attribute this enhancement to the reaction of nitrogen with liquid lithium during cycling as the Gibbs free energy of formation of Li3N (?Go = ?98.7 kJ/mol) is more negative than that of LiH (?Go = ?50.3 ... This triggered intensive research on hydrogen as a renewable fuel because the exhaust gases in hydrogen-powered vehicles mainly contain water vapor. ...

Joshua Lamb; Dhanesh Chandra; Wen-Ming Chien; Delphine Phanon; Nicolas Penin; Radovan C?erny?; Klaus Yvon

2011-06-13T23:59:59.000Z

438

Effects of gaseous NH{sub 3} and SO{sub 2} on the concentration profiles of PCDD/F in flyash under post-combustion zone conditions  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer Influence of NH{sub 3} and SO{sub 2} on 2378-PCDD/F in flyash and flue gases was investigated. Black-Right-Pointing-Pointer NH{sub 3} decreased the concentration of PCDD and PCDF by 34-75% in the flyash. Black-Right-Pointing-Pointer NH{sub 3} decreased the concentration of PCDD and PCDF by 21-40% from the flue gases. Black-Right-Pointing-Pointer SO{sub 2} led to 99% PCDD and 93% PCDF reductions in the flyash. Black-Right-Pointing-Pointer SO{sub 2} led to 89% PCDD and 76% PCDF reductions in the flue gases. - Abstract: The influence of gaseous ammonia and sulphur dioxide on the formation of 2378-substituted PCDD/F on a reference flyash from a municipal waste incinerator has been investigated using a laboratory scale fixed-bed reactor. The reference flyash samples (BCR-490) was reacted under a simulated flue gas stream at temperatures of 225 and 375 Degree-Sign C for 96 h. The experiments were carried out in two series: first with simulated flue gas alone, and then with injection of NH{sub 3} or SO{sub 2} gas into the flue gas just before the reactor inlet. It was found that the injection of gaseous ammonia into the flue gas could decrease the concentration of both PCDD and PCDF by 34-75% from the solid phase and by 21-40% from the gas phase. Converting the results to I-TEQ values, it could reduce the total I-TEQ values of PCDD and PCDF in the sum of the flyash and exhaust flue gas by 42-75% and 24-57% respectively. The application of SO{sub 2} led to 99% and 93% reductions in the PCDD and PCDF average congener concentrations, respectively in the solid phase. In the gas phase, the total reductions were 89% and 76% for PCDD and PCDF, respectively. Moreover, addition of SO{sub 2} reduced the total I-TEQ value of PCDD and PCDF in the flyash and exhaust flue gas together by 60-86% and 72-82% respectively. Sulphur dioxide was more effective than ammonia in suppressing PCDD/F formation in flyash under the conditions investigated.

Hajizadeh, Yaghoub; Onwudili, Jude A. [Energy Research Institute, University of Leeds, Leeds LS2 9JT (United Kingdom); Williams, Paul T., E-mail: p.t.williams@leeds.ac.uk [Energy Research Institute, University of Leeds, Leeds LS2 9JT (United Kingdom)

2012-07-15T23:59:59.000Z

439

Critical properties at the field-induced Bose-Einstein condensation on NiCl2-4SC(NH2)2  

SciTech Connect (OSTI)

We report new magnetization measurements on the spin-gap compound NiCl{sub 2}-4SC(NH{sub 2}){sub 2} at the low-field boundary of the magnetic field induced ordering. The critical density of the magnetization is analyzed in terms of a Bose-Einstein condensation (BEC) of bosonic quasiparticles. The analysis of the magnetization at the transition leads to the conclusion for the preservation of the U(1) symmetry, as required for BEC. The experimental data are well described by quantum Monte Carlo simulations.

Sengupta, Pinaki [Los Alamos National Laboratory; Al-hassenieh, Khaled A [Los Alamos National Laboratory; Jaime, Macelo [Los Alamos National Laboratory; Paduan-filho, Armando [Los Alamos National Laboratory

2009-01-01T23:59:59.000Z

440

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P  

E-Print Network [OSTI]

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P An Chen1,a-bandgap semiconductor AlxGa1-xP is a promising material candidate for low-noise photodiodes in blue/UV spectrum. Photodiodes were fabricated on Al0.5Ga0.5P epitaxial layer grown lattice matched on GaP substrate by molecular

Woodall, Jerry M.

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

IEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array  

E-Print Network [OSTI]

2.3-m laser. Al Ga As Sb cladding layers. Details of the lasers' heterostructure design can be foundIEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array L. Shterengas, G--High-power 2.3- m In(Al)GaAsSb颅GaSb type-I double quantum-well diode laser arrays were fabricated

442

Analyzing the Performance of a Multiobjective GA-P Algorithm for Learning Fuzzy Queries in  

E-Print Network [OSTI]

Analyzing the Performance of a Multiobjective GA-P Algorithm for Learning Fuzzy Queries in a Machine Learning Environment Oscar Cord麓on1 , Enrique Herrera-Viedma1 , Mar麓ia Luque1 , F麓elix de Moya2- tionary algorithms (EAs) [1], such as genetic algorithm-programming (GA-P) [11] or simulated annealing

Fernandez, Thomas

443

Modeling of InAs/GaAs Quantum Dot Solar Cells  

Science Journals Connector (OSTI)

This paper reports electrical characteristics of an intermediate band p-i-n GaAs solar cell with InAs quantum dots embedded in the intrinsic region using Synopsis TCAD simulation tools. Up to five layers of quantum dots have been taken into consideration ... Keywords: Quantum dots, Intermediate band, InAs, GaAs, Solar Cells, TCAD

Ayman Rizk; Kazi Islam; Ammar Nayfeh

2013-11-01T23:59:59.000Z

444

2=picosecond, GaAs photodiode optoelectronic circuit for optical correlation applications  

E-Print Network [OSTI]

2=picosecond, GaAs photodiode optoelectronic circuit for optical correlation applications K. D. Li GaAs Schottky photodiode is monolithically integrated with a microwave detector. By using this new optoelectronic circuit.in place of a nonlinear crystal in an optical correlation setup, the high-speed photodiode

Ozbay, Ekmel

445

Ultralow noise midwave infrared InAsGaSb strain layer superlattice avalanche photodiode  

E-Print Network [OSTI]

Ultralow noise midwave infrared InAs颅GaSb strain layer superlattice avalanche photodiode InAs颅GaSb strain layer superlattice p+ -n- -n homojunction avalanche photodiodes APDs grown by solid characteristics. 漏 2007 American Institute of Physics. DOI: 10.1063/1.2817608 Photodiodes operating in the eye

Krishna, Sanjay

446

14 MHz rate photon counting with room temperature InGaAs/InP avalanche photodiodes  

E-Print Network [OSTI]

14 MHz rate photon counting with room temperature InGaAs/InP avalanche photodiodes PAUL L. VOSS based on InGaAs/InP avalanche photodiodes for use at 1.55 mm wavelength. Operation at room temperature at the above wavelengths for conventional high light-level measurements with PIN or ava- lanche photodiodes

K枚pr眉l眉, Kahraman G眉莽l眉

447

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network [OSTI]

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A掳ngstro篓m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

448

Resonant Raman scattering in an InAs/GaAs monolayer structure  

E-Print Network [OSTI]

), embedded in bulklike GaAs with two Al- GaAs cladding layers forming a waveguide. The InAs- mono- layer system used. Raman spectra were excited with a Ti-Sapphire laser, tuned from 1.41 eV to 1.435 e

Nabben, Reinhard

449

Electro-optic imagery of high-voltage GaAs photoconductive switches  

SciTech Connect (OSTI)

The authors present electro-optic images of GaAs high-voltage photoconductive switches utilizing the electro-optic effect of the semi-insulating GaAs substrate. Experimental methodology for obtaining the images is described along with a self-calibrating data reduction algorithm. Use of the technique for observing fabrication defects is shown.

Falk, R.A.; Adams, J.C.; Capps, C.D.; Ferrier, S.G.; Krinsky, J.A. (Boeing Defense and Space Group, Seattle, WA (United States))

1995-01-01T23:59:59.000Z

450

Variation of lattice constant and cluster formation in GaAsBi  

SciTech Connect (OSTI)

We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy on GaAs at substrate temperatures between 220315 癈. Irrespective of the growth temperature, the structures exhibited similar Bi compositions, and good overall crystal quality as deduced from X-Ray diffraction measurements. After thermal annealing at temperatures as low as 500 癈, the GaAsBi layers grown at the lowest temperatures exhibited a significant reduction of the lattice constant. The lattice variation was significantly larger for Bi-containing samples than for Bi-free low-temperature GaAs samples grown as a reference. Rutherford backscattering spectrometry gave no evidence of Bi diffusing out of the layer during annealing. However, dark-field and Z-contrast transmission electron microscopy analyses revealed the formation of GaAsBi clusters with a Bi content higher than in the surrounding matrix, as well as the presence of metallic As clusters. The apparent reduction of the lattice constant can be explained by a two-fold process: the diffusion of the excess As incorporated within As{sub Ga} antisites to As clusters, and the reduction of the Bi content in the GaAs matrix due to diffusion of Bi to GaAsBi clusters. Diffusion of both As and Bi are believed to be assisted by the native point defects, which are present in the low-temperature as-grown material.

Puustinen, J.; Schramm, A.; Guina, M. [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland)] [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland); Wu, M.; Luna, E. [Paul-Drude Institut f黵 Festk鰎perelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)] [Paul-Drude Institut f黵 Festk鰎perelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Laukkanen, P. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland)] [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Laitinen, M.; Sajavaara, T. [Department of Physics, University of Jyv鋝kyl, P.O. Box 35, FI-40014 Jyv鋝kyl (Finland)] [Department of Physics, University of Jyv鋝kyl, P.O. Box 35, FI-40014 Jyv鋝kyl (Finland)

2013-12-28T23:59:59.000Z

451

ORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission  

E-Print Network [OSTI]

ORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission angle Emily D Kosten1 solar cell under direct sunlight, light is received from the solar disk, but is re-emitted isotropically.1038/lsa.2013.1; published online 4 January 2013 Keywords: detailed balance; GaAs solar cell; light

Atwater, Harry

452

Plasmonic nanoparticle enhanced light absorption in GaAs solar cells Keisuke Nakayama,a  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced light absorption in GaAs solar cells Keisuke Nakayama,a Katsuaki 22 September 2008 We demonstrate an improvement in efficiency of optically thin GaAs solar cells-ratio nanoparticles effectively increases the optical path of the incident light in the absorber layers resulting

Atwater, Harry

453

Calculated spin polarization of field-assisted GaAs electron source  

Science Journals Connector (OSTI)

Calculations are reported showing that for the field-assisted GaAs NEA photocathode, the spin polarization of emitted electrons can be 3.6 times higher than for non-field GaAs sources. The reason for this is that...

B. Yang; V. Guidi; L. Tecchio

1993-02-01T23:59:59.000Z

454

Coupling of nitrogen-vacancy centers in diamond to a GaP waveguide  

E-Print Network [OSTI]

The optical coupling of guided modes in a GaP waveguide to nitrogen-vacancy (NV) centers in diamond is demonstrated. The electric field penetration into diamond and the loss of the guided mode are measured. The results indicate that the GaP-diamond system could be useful for realizing coupled microcavity-NV devices for quantum information processing in diamond.

K. -M. C. Fu; C. Santori; P. E. Barclay; I. Aharonovich; S. Prawer; N. Meyer; A. M. Holm; R. G. Beausoleil

2008-11-03T23:59:59.000Z

455

Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs  

SciTech Connect (OSTI)

A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been carried out in IC1/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 prrdmin for InP, 3.6 prnh-nin for InSb, 2.3 pm/min for InGaP and 2.2 ~rrdmin for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: the etch rates increased substantially with increasing the ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than IC1/Ar, but the etched surface mophologies were fairly poor for both chemistries.

Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Hobson, W.S.; Jung, K.B.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

1998-11-23T23:59:59.000Z

456

Strain modified/enhanced ferromagnetism in Mn{sub 3}Ge{sub 2} thin films on GaAs(001) and GaSb(001)  

SciTech Connect (OSTI)

Ferromagnetic Mn{sub 3}Ge{sub 2} thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. The results of our work revealed that the substrate facilitates to modify magnetic and electrical properties of Mn{sub 3}Ge{sub 2} films due to tensile/compressive strain effect between films and substrates. The characteristic spin-flopping transition at around 150 K for the bulk Mn{sub 3}Ge{sub 2} disappeared completely for both samples. The antiferromagnetism below 150 K changed to ferromagnetism and retained above room temperature. The saturation magnetization was found to be 0.23 and 1.32 {mu}{sub B}/Mn atom at 10 K for the samples grown on GaSb(001) and GaAs(001), respectively.

Dang Duc Dung; Duong Van Thiet [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet Road, Ha Noi (Viet Nam); Feng Wuwei; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Park, In-Sung [Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Bo Lee, Sung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)

2013-04-21T23:59:59.000Z

457

Low-temperature magnetization of (Ga,Mn) As semiconductors  

E-Print Network [OSTI]

der Laan,8 C. T. Foxon,2 and B. L. Gallagher2 1Institute of Physics ASCR, Cukrovarnick? 10, 162 53 Praha 6, Czech Republic 2School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom 3Institute of Physics ASCR, Na... is organized as follows. In Sec. II we identify the key physical considerations related to ground-state mag- netization of #1;Ga,Mn#2;As ferromagnets by focusing first on a single Mn#1;d5+hole#2; complex and approximating the total magnetization...

Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

2006-01-01T23:59:59.000Z

458

Theory of weak localization in ferromagnetic (Ga,Mn)As  

E-Print Network [OSTI]

&M University, College Station, Texas 77843-4242, USA 3Institute of Physics, ASCR, v.v.i., Cukrovarnicka 10, 162 53 Praha 6, Czech Republic 4School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom #1;Received 27 November.... Unlike earlier theoretical work15,16 which ad- dressed quantum interference in ferromagnets, we focus our study on a four-band model which is directly relevant to the valence bands of #1;Ga,Mn#2;As. We demonstrate that the quan- tum interference...

Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

2009-01-01T23:59:59.000Z

459

Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors  

E-Print Network [OSTI]

- Magnetization relaxation in ?Ga,M Jairo Sinova,1 T. Jungwirth,2,3 X. Liu,4 Y. Sasaki,4 J. K 1Department of Physics, Texas A&M Universit 2Institute of Physics ASCR, Cukrovarnick 3Department of Physics, University of Texa 4Department of Physics, University... is currently the focus of a considerable experimental16 and theoretical17 research. Spin-transfer switching has not yet been demonstrated in all-semiconductor systems, but the effect promises to have a richer phenomenology in this case because...

Sinova, Jairo; Jungwirth, T.; Liu, X.; Sasaki, Y.; Furdyna, JK; Atkinson, WA; MacDonald, AH.

2004-01-01T23:59:59.000Z

460

Quantum effects in electron beam pumped GaAs  

SciTech Connect (OSTI)

Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

Yahia, M. E. [Faculty of Engineering, The British University in Egypt (BUE), El-Shorouk City, Cairo (Egypt) [Faculty of Engineering, The British University in Egypt (BUE), El-Shorouk City, Cairo (Egypt); National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt); Azzouz, I. M. [National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt)] [National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt); Moslem, W. M. [Department of Physics, Faculty of Science, Port Said University, Port Said (Egypt)] [Department of Physics, Faculty of Science, Port Said University, Port Said (Egypt)

2013-08-19T23:59:59.000Z

Note: This page contains sample records for the topic "nh fl ga" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Exciton front propagation in photoexcited GaAs quantum wells  

Science Journals Connector (OSTI)

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton rings in exciton emission patterns. The interfaces preserve their integrity during expansion, remaining as sharp as in the steady state, which indicates that the dynamics is controlled by carrier transport. The front propagation velocity is measured and compared to theoretical model. The measurements of expanding and collapsing exciton rings afford a contactless method for probing the electron and hole transport.

Sen Yang, L. V. Butov, L. S. Levitov, B. D. Simons, and A. C. Gossard

2010-03-16T23:59:59.000Z

462

IEEE ELECTRON DEVICE LETTERS, VOL. 30, NO. 6, JUNE 2009 593 GaAs MESFET With a High-Mobility  

E-Print Network [OSTI]

systems, including InGaAs [4], CdS [5], ZnO [6], and GaN [7]. To the best of our knowledge FET (MESFET) fabricated with an intentionally doped n-type planar GaAs NW channel grown on a semi

Li, Xiuling

463

Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect  

E-Print Network [OSTI]

fields on optical prop- erties in the cases of GaInAs/GaAs QWs2 and CdS/CdSe superlattices4 on GaAs 111 MOVPE . The total un- doped region sandwiched by n and p layers is 51 nm. The carrier concentrations

Wetzel, Christian M.

464

Enhanced Performance of Small GaAs Solar Cells via Edge and Surface Passivation with Trioctylphosphine Sulfide  

E-Print Network [OSTI]

Enhanced Performance of Small GaAs Solar Cells via Edge and Surface PassivationAs solar cells. Photoluminescence (PL) measurements indicate monolayers of TOP:S on GaAs significantly" GaAs solar cell (0.31 mm2 ) to test its ability to passivate devices with the relevant dimensions

Atwater, Harry

465

Intrinsic vacancy induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001) Taisuke Ohta,1,  

E-Print Network [OSTI]

Intrinsic vacancy induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001) Taisuke Ohta,1-blende structure of -Ga2Se3, which contains ordered 110 arrays of Ga vacancies. These ordered vacancy lines structural vacancies of semiconducting chalcogenides lead to numerous interesting structural, electronic

Olmstead, Marjorie

466

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE Identification of the Parasitic Chemical Reactions during AlGaN OMVPE by J. R. Creighton, M. E. Coltrin, and W. G. Breiland Motivation-GaN and AlGaN alloys are ex- tremely important materials with widespread applications for optoelectronics (e.g. solid state lighting) and high power electronics. Or- ganometallic vapor phase epitaxy (OMVPE) is the primary deposition methodology, but it suf- fers from several growth chemistry anomalies. Growth rate and alloy composition are often a sensitive function of temperature and other reac- tor variables. These factors make the AlGaN OMVPE process difficult to control and in- crease the cost of the material. Conventional wisdom has been that the non-ideal OMVPE behavior is due to parasitic "pre-reactions" be-

467

Enhanced photoelectrochemical responses of ZnO films through Ga and N codoping  

SciTech Connect (OSTI)

We report on the crystallinity and photoelectrochemical (PEC) response of ZnO thin films codoped by Ga and N. The ZnO:(Ga,N) thin films were deposited by cosputtering at room temperature and followed by postannealing at 500 deg. C in air for 2 h. We found that ZnO:(Ga,N) thin films exhibited significantly enhanced crystallinity compared to ZnO doped solely with N at the same growth conditions. Furthermore, ZnO:(Ga,N) thin films exhibited enhanced N incorporation over ZnO doped solely with N at high temperatures. As a result, ZnO:(Ga,N) thin films achieved dramatically improved PEC response, compared to ZnO thin films doped solely with N at any conditions. Our results suggest a general way to improve PEC response for wide-band-gap oxides.

Ahn, Kwang-Soon; Yan, Yanfa; Shet, Sudhakar; Deutsch, Todd; Turner, John; Al-Jassim, Mowafak [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2007-12-03T23:59:59.000Z

468

Infrared spectroscopy of amorphous hydrogenated GaAs: Evidence for H bridges  

Science Journals Connector (OSTI)

The infrared absorption spectra of hydrogenated amorphous GaAs show two prominent hydrogen-related bands at 530 and 1460 cm-1. These bands are very broad and they amount to most of the hydrogen-induced infrared absorption. The remaining structures are a number of comparatively sharp lines which we interpret as Ga-H and As-H modes in partial agreement with earlier investigations. We argue that the broad bands arise from near-stretching (1460 cm-1) and from wagging (530 cm-1) vibrations of H atoms situated in bridging positions between two Ga atoms. This assignment is supported by similar bands in Al-H polymers, a-GaP: H, and a-GaSb: H. A model calculation of the mode frequencies is also presented.

Z. P. Wang; L. Ley; M. Cardona

1982-09-15T23:59:59.000Z

469

Characteristics of vanadia on the surface of V2O5/Ti-PILC catalyst for the reduction of \\{NOx\\} by NH3  

Science Journals Connector (OSTI)

A series of vanadia catalysts impregnated on titania pillared interlayered clays (Ti-PILCs) were prepared to identify the characteristics of vanadia on the surface of Ti-PILC for the selective catalytic reduction (SCR) of NO by NH3. V2O5/Ti-PILC exhibited superior performance as a novel SCR catalyst compared to conventional catalysts including V2O5/TiO2 and V2O5/Al2O3. NO removal activity over the supported vanadia catalyst is strongly influenced by the structure of vanadia species on the catalyst surface. The structure of vanadia species on various supports including TiO2, Al2O3, and SiO2 along with Ti-PILC has been examined by XRD, NMR and Raman analyses for the comparative study. Increasing the content of vanadia up to the monolayer coverage of the surface of Ti-PILC catalyst enhanced the ratio of the polymerized surface vanadia species to the isolated ones. These results are well correlated with TOF of vanadia on the catalyst surface for the reduction of NO by NH3.

Ho Jeong Chae; In-Sik Nam; Sung-Won Ham; Suk Bong Hong

2004-01-01T23:59:59.000Z

470

Dynamic nuclear polarization and Hanle effect in (In,Ga)As/GaAs quantum dots. Role of nuclear spin fluctuations  

SciTech Connect (OSTI)

The degree of circular polarization of photoluminescence of (In,Ga)As quantum dots as a function of magnetic field applied perpendicular to the optical axis (Hanle effect) is experimentally studied. The measurements have been performed at various regimes of the optical excitation modulation. The analysis of experimental data has been performed in the framework of a vector model of regular nuclear spin polarization and its fluctuations. The analysis allowed us to evaluate the magnitude of nuclear polarization and its dynamics at the experimental conditions used.

Gerlovin, I. Ya. [Spin Optics Laboratory, Saint Petersburg State University, Petrodvorets, 198504 St. Petersburg (Russian Federation); Cherbunin, R. V.; Ignatiev, I. V.; Kuznetsova, M. S.; Verbin, S. Yu. [Spin Optics Laboratory, Saint Petersburg State University, Petrodvorets, 198504 St. Petersburg, Russia and Experimentelle Physik 2, Technische Universit鋞 Dortmund, D-44221 Dortmund (Germany); Flisinski, K.; Bayer, M. [Experimentelle Physik 2, Technische Universit鋞 Dortmund, D-44221 Dortmund (Germany); Reuter, D.; Wieck, A. D. [Angewandte Festk鰎perphysik, Ruhr-Universit鋞 Bochum, D-44780 Bochum (Germany); Yakovlev, D. R. [Experimentelle Physik 2, Technische Universit鋞 Dortmund, D-44221 Dortmund, Germany and A. F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

2013-12-04T23:59:59.000Z

471

Optical resonance modes in GaN pyramid microcavities  

SciTech Connect (OSTI)

An array of GaN hexagonal pyramids with a side length of 8.0 {mu}m was fabricated by selective epitaxial overgrowth. These microsized pyramids are highly efficient microcavities. Three types of optical resonance modes with mode spacings of 10, 5.0, and 6.0 {Angstrom} were observed when a single pyramid was pumped optically by an intense ultraviolet laser beam. An optical ray tracing method has been developed for calculating the optical resonance modes inside the pyramid microcavities. It was shown that a single pyramidal cavity can support several different types of optical resonance modes. The calculated mode spacing agrees very well with the observations. The uniqueness and advantages of this class of hexagonal pyramidal microcavities over the other microcavities are discussed. The implications of our finding on the future GaN microcavity light emitters including micro-light-emitting diodes, microcavity lasers, and vertical-cavity-surface emitting lasers are also discussed. {copyright} {ital 1999 American Institute of Physics.}

Jiang, H.X.; Lin, J.Y.; Zeng, K.C. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Yang, W. [Honeywell Technology Center, Plymouth, Minnesota 55441 (United States)] [Honeywell Technology Center, Plymouth, Minnesota 55441 (United States)

1999-08-01T23:59:59.000Z

472

Welcome to the Efficient Windows Collaborative  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Window Selection Tool: New Construction Windows Window Selection Tool: New Construction Windows The Window Selection Tool will take you through a series of design conditions pertaining to your design and location. It is a step-by-step decision-making tool to help determine the most energy efficient window for your house. SELECT LOCATION: AK Anchorage AK Fairbanks AL Birmingham AL Mobile AR Little Rock AZ Flagstaff AZ Phoenix AZ Tucson CA Arcata CA Bakersfield CA Daggett CA Fresno CA Los Angeles CA Red Bluff CA Sacramento CA San Diego CA San Francisco CO Denver CO Grand Junction CT Hartford DC Washington DE Wilmington FL Daytona Beach FL Jacksonville FL Miami FL Tallahassee FL Tampa GA Atlanta GA Savannah HI Honolulu IA Des Moines ID Boise IL Chicago IL Springfield IN Indianapolis KS Wichita KY Lexington KY Louisville LA Lake Charles LA New Orleans LA Shreveport MA Boston MD Baltimore ME Portland MI Detroit MI Grand Rapids MI Houghton MN Duluth MN Minneapolis MO Kansas City MO St. Louis MS Jackson MT Billings MT Great Falls NC Raleigh ND Bismarck NE Omaha NH Concord NJ Atlantic City NM Albuquerque NV Las Vegas NV Reno NY Albany NY Buffalo NY New York OH Cleveland OH Dayton OK Oklahoma City OR Medford OR Portland PA Philadelphia PA Pittsburgh PA Williamsport RI Providence SC Charleston SC Greenville SD Pierre TN Memphis TN Nashville TX Brownsville TX El Paso TX Fort Worth TX Houston TX Lubbock TX San Antonio UT Cedar City UT Salt Lake City VA Richmond VT Burlington WA Seattle WA Spokane WI Madison WV Charleston WY Cheyenne AB Edmonton MB Winnipeg ON Toronto PQ Montreal SELECT HOUSE TYPE:

473

Journal of Crystal Growth 293 (2006) 273277 A study of semi-insulating GaN grown on AlN buffer/sapphire  

E-Print Network [OSTI]

-temperature GaN interlayer. In comparison with the normal GaN grown on sapphire, the crystal quality measurement results of GaN grown directly on an AlN buffer indicated that the as-grown-undoped Ga, or high density of edge-type dislocations [6颅10]. However, Fe and other heavy metals tend to have reactor

Ozbay, Ekmel

474

NGA98fin5.vp  

Gasoline and Diesel Fuel Update (EIA)

8 8 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1998 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1998 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental

475

C:\ANNUAL\VENTCHAP.V8\NGAla1109.vp  

Gasoline and Diesel Fuel Update (EIA)

2000 2000 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-99.99 10.00-11.99 12.00+ 19. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 2000 (Dollars per Thousand Cubic Feet) Figure 20. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 2000 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural

476

C:\Annual\VENTCHAP.V8\NGA02.vp  

Gasoline and Diesel Fuel Update (EIA)

2002 2002 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition," and Form EIA 910, "Monthly Natural Gas Marketer Survey." 17. Average Price of Natural Gas Delivered to U.S. Commercial Consumers, 2002 (Dollars per Thousand Cubic Feet) Figure 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK 16. Average Price of Natural Gas Delivered to U.S. Residential Consumers, 2002 (Dollars per Thousand Cubic Feet) Figure Source: Energy Information Administration

477

Microsoft Word - Figure_18_19.doc  

Gasoline and Diesel Fuel Update (EIA)

9 9 0.00-2.49 2.50-4.49 4.50-6.49 6.50-8.49 8.50-10.49 10.50+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN WV VA KY PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK MD 0.00-2.49 2.50-4.49 4.50-6.49 6.50-8.49 8.50-10.49 10.50+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN WV VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Figure 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 2004 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Power Consumers, 2004 (Dollars per Thousand Cubic Feet) Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: States where the electric power price has been withheld (see Table 23) are included in the $0.00-$2.49 price category.

478

Microsoft Word - NGAMaster_State_TablesNov12.doc  

Gasoline and Diesel Fuel Update (EIA)

49 49 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN WV VA KY PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK MD 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN WV VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Figure 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 2003 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Power Consumers, 2003 (Dollars per Thousand Cubic Feet) Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: States where the electric power price has been withheld (see Table 23) are included in the $0.00-$1.99 price category.

479

C:\Annual\VENTCHAP.V8\NGA02.vp  

Gasoline and Diesel Fuel Update (EIA)

2 2 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 2002 (Dollars per Thousand Cubic Feet) Figure Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 2002 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost

480

NGA_99fin.vp  

Gasoline and Diesel Fuel Update (EIA)

9 9 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Note: Commercial prices include natural gas delivered for use as vehicle fuel. Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 16. Average Price of Natural Gas Delivered to U.S. Residential Consumers, 1999 (Dollars per Thousand Cubic Feet) Figure

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481

C:\ANNUAL\VENTCHAP.V8\NGA.VP  

Gasoline and Diesel Fuel Update (EIA)

8 8 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Note: Commercial prices include natural gas delivered for use as vehicle fuel. Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 16. Average Price of Natural Gas Delivered to U.S. Residential Consumers, 1997 (Dollars per Thousand Cubic Feet) Figure

482

C:\ANNUAL\VENTCHAP.V8\NewNGA02.vp  

Gasoline and Diesel Fuel Update (EIA)

2001 2001 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 28. Average Price of Natural Gas Delivered to U.S. Onsystem Residential Consumers, 2001 (Dollars per Thousand Cubic Feet) Figure 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Note: Commercial prices include natural gas delivered for use as vehicle fuel. Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition."

483

NGA98fin5.vp  

Gasoline and Diesel Fuel Update (EIA)

1998 1998 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Note: Commercial prices include natural gas delivered for use as vehicle fuel. Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 16. Average Price of Natural Gas Delivered to U.S. Residential Consumers, 1998 (Dollars per Thousand Cubic Feet) Figure

484

C:\ANNUAL\VENTCHAP.V8\NewNGA02.vp  

Gasoline and Diesel Fuel Update (EIA)

2001 2001 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 30. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 2001 (Dollars per Thousand Cubic Feet) Figure 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK 31. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 2001 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of

485

NGA_99fin.vp  

Gasoline and Diesel Fuel Update (EIA)

9 9 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1999 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1999 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental

486

C:\ANNUAL\VENTCHAP.V8\NGAla1109.vp  

Gasoline and Diesel Fuel Update (EIA)

Energy Energy Information Administration / Natural Gas Annual 2000 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Note: Commercial prices include natural gas delivered for use as vehicle fuel. Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ 17. Average Price of Natural Gas Delivered to U.S. Residential

487

Effects of crossed electric and magnetic fields on the electronic and excitonic states in bulk GaAs and GaAs?Ga1?xAlxAs quantum wells  

Science Journals Connector (OSTI)

The variational procedure in the effective-mass and parabolic-band approximations is used in order to investigate the effects of crossed electric and in-plane magnetic fields on the electronic and exciton properties in semiconductor heterostructures. Calculations are performed for bulk GaAs and GaAs?Ga1?xAlxAs quantum wells, for applied magnetic fields parallel to the layers and electric fields in the growth direction, and it is shown that the combined effects on the heterostructure properties of the applied crossed electric and magnetic fields and the direct coupling between the center-of-mass and internal exciton motions may be dealt with via a simple parameter representing the spatial distance between the centers of the electron and hole magnetic parabolas. Exciton properties are analyzed by using a simple hydrogenlike envelope excitonic wave function and present theoretical results are found in fair agreement with available experimental measurements on the diamagnetic shift of the photoluminescence peak position of GaAs?Ga1?xAlxAs quantum wells under in-plane magnetic fields.

M. de Dios-Leyva, C. A. Duque, and L. E. Oliveira

2007-01-02T23:59:59.000Z

488

Comparison of the efficiency of N2 and NH3 plasma treatments to improve the adhesion of PP films to in situ deposited Al coatings. Study of ageing phenomena in terms of acid-base properties  

Science Journals Connector (OSTI)

This paper reports on the characteristics of polypropylene (PP) treated at two different frequencies, 70 kHz and 13.56 MHz, in two plasma atmospheres, NH3 and N2 plasmas. Chemical modifications created on the plasma-treated material were investigated by different complementary surface analytical techniques (X-ray photoelectron spectroscopy (XPS) and contact angle measurements), which revealed a higher reactivity of the NH3 plasma. The incorporation of nitrogen plays an important role as revealed by the adhesion study of thermally evaporated aluminium with treated PP: the measured peel strengths were two times higher for NH3-treated surfaces than for N2-treated ones, with XPS measurements showing a sharper increase of N/C ratio as a function of treatment time for the former treatment. Ageing of the PP pretreated in NH3 was also studied in terms of surface acid-base properties. The work of adhesion, calculated from contact angle measurements, showed a distinct dependence on the pH value of the test liquids and good correlations were obtained with peel test results. The basic character of the NH3-treated PP disappears with ageing, leading to an amphoteric surface.

M. Tatoulian; F. Arefi-Khonsari; N. Shahidzadeh-Ahmadi; J. Amouroux

1995-01-01T23:59:59.000Z

489

Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization  

DOE Patents [OSTI]

Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

Tuttle, John R. (Denver, CO); Contreras, Miguel A. (Golden, CO); Noufi, Rommel (Golden, CO); Albin, David S. (Denver, CO)

1994-01-01T23:59:59.000Z

490

Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization  

DOE Patents [OSTI]

Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

Tuttle, J.R.; Contreras, M.A.; Noufi, R.; Albin, D.S.

1994-10-18T23:59:59.000Z

491

Many-body effects on optical gain in GaAsPN/GaPN quantum well lasers for silicon integration  

SciTech Connect (OSTI)

Many-body effects on the optical gain in GaAsPN/GaP QW structures were investigated by using the multiband effective-mass theory and the non-Markovian gain model with many-body effects. The free-carrier model shows that the optical gain peak slightly increases with increasing N composition. In addition, the QW structure with a larger As composition shows a larger optical gain than that with a smaller As composition. On the other hand, in the case of the many-body model, the optical gain peak decreases with increasing N composition. Also, the QW structure with a smaller As composition is observed to have a larger optical gain than that with a larger As composition. This can be explained by the fact that the QW structure with a smaller As or N composition shows a larger Coulomb enhancement effect than that with a larger As or N composition. This means that it is important to consider the many-body effect in obtaining guidelines for device design issues.

Park, Seoung-Hwan, E-mail: shpark@cu.ac.kr [Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongbuk 712-702 (Korea, Republic of)

2014-02-14T23:59:59.000Z

492

26. 1% solar cell efficiency for Ge mechanically stacked under GaAs  

SciTech Connect (OSTI)

We have processed a diffused Ge wafer into a Ge concentrator solar cell and mechanically stacked it under a GaAs cell fabricated by Varian. We measured this stack's efficiency to be 26.1% for terrestrial air mass 1.5 direct (AM1.5D) conditions at a 285 x concentration ratio. We showed that this efficiency is limited by optical absorption in the Varian GaAs cell caused by high 2--4 (10/sup 18/) cm/sup -3/ substrate doping. We used a 2 x 10/sup 17/ cm/sup -3/ doped GaAs filter to estimate the stack efficiency as 27.4%, which would be achieved with the same Varian GaAs cell formed on a lower doped substrate. We project efficiencies assuming the best properties reported for a GaAs device. This gives a 29.6% efficiency for an improved, planar Ge cell and 31.6% efficiency for a proposed point contact geometry for the Ge cell. The corresponding space (AM0) efficiencies at a 159 x concentration ratio range from the 23.4% value we measured on the stack up to 28.4% projected for the point contact Ge place under the best GaAs cell. We showed that Ge cells give higher efficiencies than Si when stacked under GaAs.

Partain, L.D.; Kuryla, M.S.; Weiss, R.E.; Ransom, R.A.; McLeod, P.S.; Fraas, L.M.; Cape, J.A.

1987-10-01T23:59:59.000Z

493

METALLICITIES, DUST, AND MOLECULAR CONTENT OF A QSO-DAMPED Ly{alpha} SYSTEM REACHING log N(H I) = 22: AN ANALOG TO GRB-DLAs  

SciTech Connect (OSTI)

We present the elemental abundance and H{sub 2} content measurements of a damped Ly{alpha} (DLA) system with an extremely large H I column density, log N(H I) (cm{sup -2}) = 22.0 {+-} 0.10, at z{sub abs} = 3.287 toward the QSO SDSS J081634+144612. We measure column densities of H{sub 2}, C I, C I*, Zn II, Fe II, Cr II, Ni II, and Si II from a high signal-to-noise and high spectral resolution VLT-UVES spectrum. The overall metallicity of the system is [Zn/H] = -1.10 {+-} 0.10 relative to solar. Two molecular hydrogen absorption components are seen at z = 3.28667 and 3.28742 (a velocity separation of Almost-Equal-To 52 km s{sup -1}) in rotational levels up to J = 3. We derive a total H{sub 2} column density of log N(H{sub 2}) (cm{sup -2}) = 18.66 and a mean molecular fraction of f = 2N(H{sub 2})/[2N(H{sub 2}) + N(H I)] = 10{sup -3.04{+-}0.37}, typical of known H{sub 2}-bearing DLA systems. From the observed abundance ratios we conclude that dust is present in the interstellar medium of this galaxy, with an enhanced abundance in the H{sub 2}-bearing clouds. However, the total amount of dust along the line of sight is not large and does not produce any significant reddening of the background QSO. The physical conditions in the H{sub 2}-bearing clouds are constrained directly from the column densities of H{sub 2} in different rotational levels, C I and C I*. The kinetic temperature is found to be T Almost-Equal-To 75 K and the particle density lies in the range n{sub H} = 50-80 cm{sup -3}. The neutral hydrogen column density of this DLA is similar to the mean H I column density of DLAs observed at the redshift of {gamma}-ray bursts (GRBs). We explore the relationship between GRB-DLAs and the high column density end of QSO-DLAs finding that the properties (metallicity and depletion) of DLAs with log N(H I) > 21.5 in the two populations do not appear to be significantly different.

Guimaraes, R. [Programa de Modelagem Computacional-SENAI-Cimatec, 41650-010 Salvador, Bahia (Brazil); Noterdaeme, P.; Petitjean, P. [UPMC-CNRS, UMR7095, Institut d'Astrophysique de Paris, 98bis Blvd. Arago, F-75014 Paris (France); Ledoux, C. [European Southern Observatory, Alonso de Cordova 3107, Casilla 19001, Vitacura, Santiago 19 (Chile); Srianand, R.; Rahmani, H. [Inter-University Centre for Astronomy and Astrophysics, Post Bag 4, Ganeshkhind, Pune 411007 (India); Lopez, S., E-mail: rguimara@eso.org [Departamento de Astronomia, Universidad de Chile, Casilla 36-D, Santiago (Chile)

2012-06-15T23:59:59.000Z

494

Lattice dynamics of GaN: Effects of 3d electrons  

Science Journals Connector (OSTI)

We perform first-principles calculations of structural, dielectric, and lattice-dynamical properties of cubic GaN. The equilibrium structure is obtained using the plane-wave pseudopotential approach within the density-functional theory and local-density approximation. The dielectric and vibrational properties are computed within the density-functional perturbation theory. The effect of the Ga 3d electrons is treated by taking into account the nonlinear core corrections for the exchange and correlation energy. The importance of 3d electrons for the bonding strength is determined, and their influence on the dielectric and dynamical properties of GaN is analyzed and discussed.

K. Karch; F. Bechstedt; T. Pletl

1997-08-15T23:59:59.000Z

495

Atomic geometry of the 22 GaP(111) surface  

Science Journals Connector (OSTI)

Integral and fractional order beam low-energy electron-diffraction intensity-voltage (I-V) data have been taken on a bombardment-annealed GaP(111)-(22) surface. We have compared these data with calculated I-V curves using a dynamical multiple scattering theory and found very good agreement for the following model: One out of every four Ga surface atoms is missing and the surface Ga-P bilayer is almost coplanar. Surface and deeper layer atoms undergo vertical and lateral displacements from bulk positions. Similar results in other systems suggest that the vacancy model applies on the (111) face of many compound semiconductors.

G. Xu; W. Y. Hu; M. W. Puga; S. Y. Tong; J. L. Yeh; S. R. Wang; B. W. Lee

1985-12-15T23:59:59.000Z

496

Integration of inverted InGaAs MSM array on Si substrate through low temperature  

E-Print Network [OSTI]

to reduce thermal stress at the interface. Huang et al. [2] presented a thin-film InGaAs MSM PD bonded to Si layers including those on InGaAs MSMs and Si/SiO2 is 860 nm. eching window InP epi-layer SiO2 Si Ti Au Au HCl:H3PO4 (1:1) to open a photodetection window. Citric acid was used to remove the InGaAs etching

Huang, Zhaoran "Rena"

497

Growth and optical characterization of multilayers of InGaN quantum dots  

E-Print Network [OSTI]

GaN quantum dots Article Type: Research Paper Section/Category: General subjects Keywords: B2. InGaN quantum dots; A1. Photoluminescence; B1. Nitrides; A3. Metal-organic vapour phase epitaxy Corresponding Author: Dr Tongtong Zhu, Ph... , Cambridge, CB2 3QZ, UK Dr Tongtong Zhu Tel: +44 1223 334368 Fax: +44 1223 334437 E-mail: tz234@cam.ac.uk 9 Sep 2011 Dear Editor, Title: Growth and optical characterization of multilayers of InGaN quantum dots Authors: Tongtong Zhu, Haitham A...

Zhu, Tontong; El-Ella, Haitham; Reid, Benjamin; Holmes, Mark; Taylor, Robert; Kappers, Menno; Oliver, Rachel

2012-01-01T23:59:59.000Z

498

Low threshold for optical damage in AlGaN epilayers and heterostructures  

SciTech Connect (OSTI)

Laser pulses with duration much shorter than the effective carrier lifetime cause permanent photoluminescence (PL) quenching and enhancement of PL decay rate in bare-faceted and capped AlGaN epilayers and multiple quantum wells at pulse energies about an order of magnitude lower than those causing the surface to melt and degrade. In contrast, GaN epilayers exhibit no photomodification in the same excitation intensity range. PL spectra and decay kinetics show that lattice heating is not responsible for the observed changes in AlGaN, which result from the formation of nonradiative recombination centers via recombination-enhanced defect reactions occurring at high nonequilibrium carrier densities.

Saxena, Tanuj [Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Tamulaitis, Gintautas [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio al. 9-III, Vilnius, LT-10222 (Lithuania); Shatalov, Max; Yang, Jinwei; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209 (United States); Shur, Michael S. [Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Department of PAPA, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

2013-11-28T23:59:59.000Z

499