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Sample records for nc sc ga

  1. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    Özduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigör, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  2. Issues associated with the metalorganic chemical vapor deposition of ScGaN and YGaN alloys.

    SciTech Connect (OSTI)

    Koleske, Daniel David; Knapp, James Arthur; Lee, Stephen Roger; Crawford, Mary Hagerott; Creighton, James Randall; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01

    The most energy efficient solid state white light source will likely be a combination of individually efficient red, green, and blue LED. For any multi-color approach to be successful the efficiency of deep green LEDs must be significantly improved. While traditional approaches to improve InGaN materials have yielded incremental success, we proposed a novel approach using group IIIA and IIIB nitride semiconductors to produce efficient green and high wavelength LEDs. To obtain longer wavelength LEDs in the nitrides, we attempted to combine scandium (Sc) and yttrium (Y) with gallium (Ga) to produce ScGaN and YGaN for the quantum well (QW) active regions. Based on linear extrapolation of the proposed bandgaps of ScN (2.15 eV), YN (0.8 eV) and GaN (3.4 eV), we expected that LEDs could be fabricated from the UV (410 nm) to the IR (1600 nm), and therefore cover all visible wavelengths. The growth of these novel alloys potentially provided several advantages over the more traditional InGaN QW regions including: higher growth temperatures more compatible with GaN growth, closer lattice matching to GaN, and reduced phase separation than is commonly observed in InGaN growth. One drawback to using ScGaN and YGaN films as the active regions in LEDs is that little research has been conducted on their growth, specifically, are there metalorganic precursors that are suitable for growth, are the bandgaps direct or indirect, can the materials be grown directly on GaN with a minimal defect formation, as well as other issues related to growth. The major impediment to the growth of ScGaN and YGaN alloys was the low volatility of metalorganic precursors. Despite this impediment some progress was made in incorporation of Sc and Y into GaN which is detailed in this report. Primarily, we were able to incorporate up to 5 x 10{sup 18} cm{sup -3} Y atoms into a GaN film, which are far below the alloy concentrations needed to evaluate the YGaN optical properties. After a no-cost extension was granted on this program, an additional more 'liquid-like' Sc precursor was evaluated and the nitridation of Sc metals on GaN were investigated. Using the Sc precursor, dopant level quantities of Sc were incorporated into GaN, thereby concluding the growth of ScGaN and YGaN films. Our remaining time during the no-cost extension was focused on pulsed laser deposition of Sc metal films on GaN, followed by nitridation in the MOCVD reactor to form ScN. Finally, GaN films were deposited on the ScN thin films in order to study possible GaN dislocation reduction.

  3. SC

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  4. EV Community Readiness projects: Center for Transportation and the Environment (GA, AL, SC); Centralina Council of Governments (NC)

    Broader source: Energy.gov [DOE]

    2013 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting

  5. Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)

    SciTech Connect (OSTI)

    King, Sean W., E-mail: sean.king@intel.com [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); Nemanich, Robert J. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States); Department of Physics, Arizona State University, Tempe, Arizona 85281 (United States); Davis, Robert F. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

    2014-08-25

    In order to understand and predict the behavior of future scandium nitride (ScN) semiconductor heterostructure devices, we have utilized in situ x-ray and ultra-violet photoelectron spectroscopy to determine the valence band offset (VBO) present at ScN/3C-SiC (111) and 2H-GaN (0001)/ScN (111) interfaces formed by ammonia gas source molecular beam epitaxy. The ScN/3C-SiC (111) VBO was dependent on the ScN growth temperature and resistivity. VBOs of 0.4?±?0.1 and 0.1?±?0.1?eV were, respectively, determined for ScN grown at 925?°C (low resistivity) and 800?°C (high resistivity). Using the band-gaps of 1.6?±?0.2 and 1.4?±?0.2?eV previously determined by reflection electron energy loss spectroscopy for the 925 and 800?°C ScN films, the respective conduction band offsets (CBO) for these interfaces were 0.4?±?0.2 and 0.9?±?0.2?eV. For a GaN (0001) interface with 925?°C ScN (111), the VBO and CBO were similarly determined to be 0.9?±?0.1 and 0.9?±?0.2?eV, respectively.

  6. Table 2 -Lime use and practices on Corn, major producing states, 2001 CO GA IL IN IA KS KY MI MN MO NE NY NC ND OH PA SD TX WI Area

    E-Print Network [OSTI]

    Kammen, Daniel M.

    MO NE NY NC ND OH PA SD TX WI Area Lime applied NR 85 81 85 67 16 72 55 27 65 10 57 53 NR 70 95 3 1 50 51 Lime (tons treated acre) NR 1.0 2.1 1.9 2.5 2.1 2.4 2.0 2.6 2.8 1.5 1.9 1.1 NR 1.9 1.7 NR 0.5 2 NC ND OH PA SD TX WI Area Lime applied NR 95 90 69 18 69 71 14 77 16 76 99 NR 82 80 NR 5 58 54 Lime

  7. CT NC0

    Office of Legacy Management (LM)

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  8. Instrumentation SC 

    E-Print Network [OSTI]

    Unknown

    2011-08-17

    Pasture feeding depresses adipose tissue development in beef cattle whereas grain feeding, enhances adipogenesis. Therefore, we hypothesized that specific fatty acids would differentially affect lipogenesis in explants of bovine subcutaneous (SC...

  9. Alternative large Nc baryons and holography

    E-Print Network [OSTI]

    Carlos Hoyos-Badajoz; Andreas Karch

    2009-06-24

    In gauge theories in the limit of a large number Nc of colors, baryons are usually described as heavy solitonic objects with mass of order Nc. We discuss an alternative large Nc description both directly in the field theory as well as using holography. In this alternative large Nc limit at least some of the baryons behave like mesons, that is they stay light even at large Nc and their interactions vanish in that limit. For Nc=3 these alternative large Nc baryons are equivalent to the standard baryons. In the holographic description it is manifest that the Regge slopes of mesons and alternative baryons are degenerate.

  10. NC CSC Open Science Conference

    Broader source: Energy.gov [DOE]

    This three-day conference will bring the regional climate research community (North Central region universities, DOI agencies, and other research institutions) and stakeholders, including local, federal, and tribal resource managers and leaders, to foster productive engagement, interactions, and involvement with the North Central Climate Science Center (NC CSC). The conference will strive to identify emerging research issues and topics.

  11. NC

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  12. GA-AL-SC | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergy A plug-inPPLforLDRD Report11, SolarMat 4" | DepartmentJune 3, 2015 2 Who

  13. Heavy baryons in the large Nc limit

    E-Print Network [OSTI]

    Albertus, C; Fernando, I P; Goity, J L

    2015-01-01

    It is shown that in the large Nc limit heavy baryon masses can be estimated quantitatively in a 1/Nc expansion using the Hartree approximation. The results are compared with available lattice calculations for different values of the ratio between the square root of the string tension and the heavy quark mass tension independent of Nc. Using a potential adjusted to agree with the one obtained in lattice QCD, a variational analysis of the ground state spin averaged baryon mass is performed using Gaussian Hartree wave functions. Relativistic corrections through the quark kinetic energy are included. The results provide good estimates for the first sub-leading in 1/Nc corrections.

  14. Heavy baryons in the large Nc limit

    E-Print Network [OSTI]

    C. Albertus; E. Ruiz Arriola; I. P. Fernando; J. L. Goity

    2015-07-16

    It is shown that in the large Nc limit heavy baryon masses can be estimated quantitatively in a 1/Nc expansion using the Hartree approximation. The results are compared with available lattice calculations for different values of the ratio between the square root of the string tension and the heavy quark mass tension independent of Nc. Using a potential adjusted to agree with the one obtained in lattice QCD, a variational analysis of the ground state spin averaged baryon mass is performed using Gaussian Hartree wave functions. Relativistic corrections through the quark kinetic energy are included. The results provide good estimates for the first sub-leading in 1/Nc corrections.

  15. N.C. NEURO-COGENERATION

    E-Print Network [OSTI]

    McLaughlin, Richard M.

    HOSPITAL N.C. NEURO- FACILITY COGENERATION KENNON CHEEK/ FRANKLIN ITS HENRY DRAMATIC CENTER FOR ART- TOMKINS OPS. CNTR. STEAM PLANT CENTER HOOKER RESEARCH LABS CAUDILLGLOBAL EDUCATION RECREATION PARKING DECK

  16. intramural fields bissonnet street

    E-Print Network [OSTI]

    Aazhang, Behnaam

    Visitor Lot West Lot 4 W Greenbriar Lot North Lot N bus stop A Bike Track visitor parking visitor parking Visitor Parking Accessible Parking Parking Lots: APB Alice Pratt Brown Hall Lot B Baker College C K C C H H BRC H BG NA SS G GA B SC SC SC SC NC NC NC NC NC L L L L West Lot 1 APB (visitors

  17. SC Johnson Waxdale Plant

    SciTech Connect (OSTI)

    2010-01-01

    This is a combined heat and power (CHP) project profile on a 6.4 MW CHP application at SC Johnson Waxdale Plant in Racine, Wisconsin.

  18. TThe {\\sc Majorana} Project

    E-Print Network [OSTI]

    The MAJORANA collaboration

    2009-10-23

    The {\\sc Majorana} Project, a neutrinoless double-beta decay experiment is described with an emphasis on the choice of Ge-detector configuration.

  19. M.Sc. Finance M.Sc. Investment and Finance

    E-Print Network [OSTI]

    Mottram, Nigel

    M.Sc. Finance M.Sc. Investment and Finance M.Sc. International Banking and Finance and M.Sc. International Accounting and Finance 2014-15 Introductory Meeting Information Welcome to the full-time postgraduate taught programmes for the Department of Accounting and Finance at the University of Strathclyde

  20. 2012 NC Mobile CARE Awards April 20, 2012

    E-Print Network [OSTI]

    provided technology assessment and commercialization services to notable clients such as NASA. Our Judges2012 NC Mobile CARE Awards April 20, 2012 Background: The NC Mobile Clean Air Renewable Energy

  1. Kh trng khn cp nc ung Trong nhng thi k ri ren, cc s y t a phng c th khuyn co ngi dn dng nc thn

    E-Print Network [OSTI]

    nc cho gia ình bn, bn vn có th tìm c s lng gii hn dùng bng cách ly nc ra t bình nc nóng, hay là tan nc ni ó. Thuc kh trùng ít hiu nghim nu nc c. Cn phi lc nc c qua nhng khn sch hoc yên cho lng xung, và không b r sét. Có hai phng pháp kh trùng thông dng và hiu qu nu lng nc ít. Phng pháp th nht là Ðun

  2. Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes

    SciTech Connect (OSTI)

    Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

    2014-10-27

    The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

  3. Category:Greensboro, NC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButte County,Camilla, Georgia:Geothermal Regulatory Roadmap SectionsGreensboro, NC

  4. Clean Cities Recovery Act: Vehicle & Infrastructure Deployment...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    (GA, AL, SC); Centralina Council of Governments (NC) EV Community Readiness projects: South Florida Regional Planning Council; Virginia Department of Mines, Minerals and Energy...

  5. Service Science, Management and Engineering Curricula and Research at NC State University

    E-Print Network [OSTI]

    Perros, Harry

    _allen@ncsu.edu (919) 515-6941 Harry Perros Professor, Department of Computer Science, NC State University Raleigh, NC1 Service Science, Management and Engineering Curricula and Research at NC State University Steven and Computer Engineering, NC State University Raleigh, NC 27695-7911 candice@ncsu.edu (919) 515-7357 Michael

  6. NERSC at SC11

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  7. NERSC at SC13

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  8. SC e-journals

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  9. NC GreenPower Renewable Energy Credit Production

    Office of Energy Efficiency and Renewable Energy (EERE)

    NC GreenPower is requesting proposals for renewable energy credits associated with renewable energy, such as solar, PV, wind, small hydro of 10 MW or less, generated in North Carolina and supplied to the North Carolina electric grid.

  10. NC State Chemical Engineering Degrees -MS Graduation Name NicknameGrad Date Hometown StateUndergrad Chair Initial Employer Employer City State

    E-Print Network [OSTI]

    Velev, Orlin D.

    William Long Belvin Bill 6/11/1934 Raleigh NC NC State John Colwell McNair 6/11/1934 Wilmington NC NC State William Henry Ayscue Bill 6/10/1935 Henderson NC NC State DuPont Penns Grove NY Gerald Thomas Henry Richard Ireland Henry 6/7/1953 Greensboro NC NC State Beatty Paul Davis Miller Jr Paul 6

  11. Center for Network-Centric Cognition and Information Fusion (NC2IF)

    E-Print Network [OSTI]

    Lee, Dongwon

    for Network-Centric Cognition and Information Fusion (NC2IF) explores the information chain from energyCenter for Network-Centric Cognition and Information Fusion (NC2IF) http://ist.psu.edu/nc2if Col.edu Center for Network-Centric Cognition and Information Fusion (NC2IF) The Pennsylvania State University

  12. Holographic 1/Nc correction from the chiral condensate

    E-Print Network [OSTI]

    Bum-Hoon Lee; Chanyong Park; Sunyoung Shin

    2010-10-06

    We investigate a gravity solution containing the gravitational backreaction of the massive scalar field dual to the chiral condensate, which corresponds to $1/N_c$ correction. In general, condensation changes the vacuum structure, so the present dual geometry is appropriate to describe the chiral condensate vacuum in the gauge theory side. After constructing the dual geometry numerically and applying the hard wall model we study the effect of the $1/N_c$ correction on the lightest meson spectra, which improves the values for lightest meson masses into the observations. In addition, we investigate the chiral condensate dependence the binding energy of heavy quarkonium.

  13. NC machine tool path generation from CSG part

    E-Print Network [OSTI]

    Bobrow, James E.

    NC machine tool path generation from CSG part representations James E Bobrow Recent improvements for machine tool path generation. Current machining algorithms require that any port geometric information modelling system is used. Thispaper presents o method for generating numerically-controlled milling machine

  14. NC State Engineering in the 21st Century

    E-Print Network [OSTI]

    NC State Engineering in the 21st Century Louis A. Martin-Vega, Ph.D., P.E. Dean of Engineering North Carolina State University February 3, 2011 #12;1887 Engineering Departments established North the College s 1st professor of civil engineering (also 2nd President and 1st football coach) 1923 School

  15. NERSC Training at SC11

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  16. NERSC Training at SC12

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  17. High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

    SciTech Connect (OSTI)

    Shvarts, Maxim Z., E-mail: shvarts@scell.ioffe.ru; Kalyuzhnyy, Nikolay A.; Mintairov, Sergey A.; Soluyanov, Andrei A.; Timoshina, Nailya Kh. [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021 (Russian Federation); Gudovskikh, Alexander S. [Saint-Petersburg Academic University - Nanotechnology Research and Education Centre RAS, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26

    In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to ?190 °C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V{sub oc} starting from ?20°C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-pGe heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique.

  18. TRAC-PF1 post-test predictions for the Semiscale Natural-Circulation Tests S-NC-2 and S-NC-6. [PWR

    SciTech Connect (OSTI)

    Booker, C.P.

    1983-01-01

    The TRAC prediction are compared to the data for the Semiscale natural-circular Tests S-NC-2B and S-NC-6. S-NC-2B is a baseline test covering single- and two-phase natural circulation as well as reflux; here TRAC compares quite well with the experiment results for mass flow. For Test S-NC-6, which is a reflux test with various amounts of nitrogen injected into the system, the TRAC prediction of the reflux rate is close to the experiment value with no nitrogen in the system. Ultimately, the maximum reflux rate predicted by TRAC is about 20% higher than the data.

  19. Large Nc QCD and Models of Exotic Baryons

    E-Print Network [OSTI]

    Thomas D. Cohen

    2004-07-15

    Exotic baryons have been predicted in the context of the chiral soliton model. These states have been identified with strangeness +1 resonances reported in a number of experiments. In this talk it is pointed out that the technique used to quantize these solitons in most conventional treatments depends on dynamical assumptions beyond those in standard large Nc physics. These additional assumptions have never been justified.

  20. ENGINEERING INFORMATION SESSIONS NC STATE UNIVERSITY OPEN HOUSE

    E-Print Network [OSTI]

    Bahler, Dennis R.

    ENGINEERING INFORMATION SESSIONS NC STATE UNIVERSITY OPEN HOUSE Be sure to check out the Campus Map 9:30 am, 10:30 am, 11:30 am, 12:30 pm Engineering Building II Room 1025: 10 am, 11 am, 12 pm, 1 pm and Engineering Pulp and Paper Labs Room 2221: 11 am and 1 pm Tours starting at 9 am COLLEGE OF ENGINEERING

  1. NC-1-B Wholesale Power Rate Schedule | Department of Energy

    Energy Savers [EERE]

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  2. Integrated Circuit Implementation for a GaN HFETs Driver Circuit

    E-Print Network [OSTI]

    Bakos, Jason D.

    @engr.sc.edu Abstract- The paper presents the design of an integrated circuit (IC) for a 10MHz low power-loss driver exploit the advantages of GaN devices, such as superior switching speed and operation in high-power the authors focus on the design of the IC and present preliminary results and considerations. The driver

  3. ENGINEERING INFORMATION SESSIONS NC STATE UNIVERSITY OPEN HOUSE

    E-Print Network [OSTI]

    Bahler, Dennis R.

    ENGINEERING INFORMATION SESSIONS NC STATE UNIVERSITY OPEN HOUSE Be sure to check out the Campus Map 9:30 a.m., 10:30 a.m., 11:30 a.m., 12:30 p.m. Engineering Building I Room 1007: 10 a.m., 11 a.m. Engineering Building II Room 1025: 10 a.m., 11 a.m. Room 1231: 9:30 a.m., 10:30 a.m. Room 1021: 9:30 a.m., 10

  4. The Nc dependencies of baryon masses: Analysis with Lattice QCD and Effective Theory

    SciTech Connect (OSTI)

    Calle Cordon, Alvaro C. [JLAB; DeGrand, Thomas A. [University of Colorado; Goity, Jose L. [JLAB

    2014-07-01

    Baryon masses at varying values of Nc and light quark masses are studied with Lattice QCD and the results are analyzed in a low energy effective theory based on a combined framework of the 1/Nc and Heavy Baryon Chiral Perturbation Theory expansions. Lattice QCD results for Nc=3, 5 and 7 obtained in quenched calculations, as well as results for unquenched calculations for Nc=3, are used for the analysis. The results are consistent with a previous analysis of Nc=3 LQCD results, and in addition permit the determination of sub-leading in 1/Nc effects in the spin-flavor singlet component of the baryon masses as well as in the hyperfine splittings.

  5. SC11 Education Program Applications due July 31

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SC11 Education Program Applications due July 31 SC11 Education Program Applications due July 31 June 9, 2011 by Francesca Verdier (0 Comments) Applications for the Education...

  6. Room-temperature elastic constants of Sc and ScD[sub 0. 18

    SciTech Connect (OSTI)

    Leisure, R.G. ); Schwarz, R.B.; Migliori, A.; Lei, M. )

    1993-07-01

    The complete set of elastic constants for Sc and ScD[sub 0.18] has been measured at room temperature. The results show that the addition of hydrogen to this rare-earth metal has a qualitatively different effect than the addition of hydrogen to transition metals such as palladium, vanadium, niobium, and tantalum. In the case of Sc all five elastic constants increase with the addition of hydrogen. The bulk modulus for ScD[sub 0.18] is 9.5% higher than that for Sc. The Debye temperature computed from the room-temperature elastic constants is 355 K for Sc and 371 K for ScD[sub 0.18].

  7. SC Correspondence Control Center (SC CCC) | U.S. DOE Office of Science (SC)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservation of Fe(II) byMultidayAlumni > The EnergyRyan REPORT4.F..2.SC Correspondence

  8. Photo-production of Positive Parity Excited Baryons in the 1/Nc Expansion of QCD

    E-Print Network [OSTI]

    Jose L. Goity Norberto N. Scoccola

    2007-01-29

    We analyze the photo-production helicity amplitudes for the positive parity excited baryons in the context of the $1/N_c$ expansion of QCD. The results show that sub-leading corrections in $1/N_c$ are important and that, while 1-body effective operators are dominant, there is some evidence for the need of 2-body effects.

  9. Comparative affinity purification of single chain antibody NC6.8 

    E-Print Network [OSTI]

    Jackson, Michael Gary

    1996-01-01

    Single chain antibody (scfv NC6.8) was generated from the IgG (2b,k) parent mAb cell line NC6.8, a mAb that binds a super-potent trisubstituted guanidino sweetener, N-(p-cyanophenyl)-N'(diphenylmethyl)guanidine acetic acid. The plasmid construct...

  10. The total nucleon-nucleon cross section at large N_c

    E-Print Network [OSTI]

    Thomas D. Cohen

    2012-03-26

    It is shown that at sufficiently large $N_c$ for incident momenta which are much larger than the QCD, the total nucleon-nucleon cross section is independent of incident momentum and given by $\\sigma^{\\rm total}=2 \\pi \\log^2(N_c) / (m^2_{\\pi})$. This result is valid in the extreme large $N_c$ regime of $\\log(N_c) \\gg 1$ and has corrections of relative order $\\log (\\log(N_c))/\\log(N_c)$. A possible connection of this result to the Froissart-Martin bound is discussed.

  11. B.Sc.),1995(-M.Sc.)1998( ,Ph.D.)2003( -)2003-2004( , .

    E-Print Network [OSTI]

    1 " " " B.Sc.),1995(-M.Sc.)1998( ,Ph.D.)2003( -)2003-2004( , . , ­ ) ,2004 of Technology)2003- 4(.-MIT2004-6 . , - - MIT . -Aga Khan Program for Islamic Architecture2004-5-MIT-2002(;Honorary Research Fellow, )SWIT(,2001-2004)(;NASA Langley Research Center, NRC Research Associate)2002

  12. B.Sc.)(-M.Sc. )1989,1996.(Ph.D. )2001.( -,.

    E-Print Network [OSTI]

    Rimon, Elon

    " " " B.Sc.)(-M.Sc. )1989,1996.(Ph.D. )2001.( - ,. : - , , . - ,DTM;" Diplome d' Lngeneur)1990( - -Brussels Free University)1995( -Ph.D.)2000( . - )2001-2002( )2002( .-M.S.),1996( .M.S.)1998(-Ph.D.)2001( +) (-CALTECH. - -MIT)2001-2002(, Irvine

  13. QCD strings and the thermodynamics of the metastable phase of QCD at large $N_c$

    E-Print Network [OSTI]

    Thomas D. Cohen

    2006-09-27

    The thermodyanmics of a metastable hadronic phase of QCD at large $N_C$ are related to properties of an effective QCD string. In particular, it is shown that in the large $N_c$ limit and near the maximum hadronic temperature, $T_H$, the energy density and pressure of the metastable phase scale as ${\\cal E} \\sim (T_H-T)^{-(D_\\perp-6)/2}$ (for $D_\\perp <6$) and $P \\sim (T_H-T)^{-(D_\\perp-4)/2}$ (for $D_\\perp <4$) where $D_\\perp$ is the effective number of transverse dimensions of the string theory. It is shown, however, that for the thermodynamic quantities of interest the limits $T \\to T_H$ and $N_c \\to \\infty$ do not commute. The prospect of extracting $D_\\perp$ via lattice simulations of the metastable hadronic phase at moderately large $N_c$ is discussed.

  14. Development of an NC equipment level controller in a hierarchical shop floor control system 

    E-Print Network [OSTI]

    Chang, William

    1993-01-01

    The methodology of developing an NC equipment controller in a Computer Integrated Manufacturing (CIM) System, which is based on a philosophy of hierarchical shop floor control, is presented in this research. The underlying architecture consists...

  15. Environmental effects on electron spin relaxation in N@C60

    E-Print Network [OSTI]

    John J. L. Morton; Alexei M. Tyryshkin; Arzhang Ardavan; Kyriakos Porfyrakis; S. A. Lyon; G. Andrew D. Briggs

    2007-04-15

    We examine environmental effects of surrounding nuclear spins on the electron spin relaxation of the N@C60 molecule (which consists of a nitrogen atom at the centre of a fullerene cage). Using dilute solutions of N@C60 in regular and deuterated toluene, we observe and model the effect of translational diffusion of nuclear spins of the solvent molecules on the N@C60 electron spin relaxation times. We also study spin relaxation in frozen solutions of N@C60 in CS2, to which small quantities of a glassing agent, S2Cl2 are added. At low temperatures, spin relaxation is caused by spectral diffusion of surrounding nuclear 35Cl and 37Cl spins in the S2Cl2, but nevertheless, at 20 K, T2 times as long as 0.23 ms are observed.

  16. Continuous Commissioning® for a LEED-NC Certified Museum and Cultural Center 

    E-Print Network [OSTI]

    Zheng, K.

    2012-01-01

    Commissioning? for a LEED-NC Certified Museum and Cultural Center Keke (Kirk) Zheng Outline ? Facility Description ? HVAC Systems Description ? LEED Evaluation Facts ? CC Measures Implementation ? Energy Savings Analysis ? Recommendations ? Conclusions... framework; Awarded a LEED-NC Certified rating in June, 2006. 6 CC Implementation ? Summarization of the Major CC Recommendations System CC Measure All AHUs - HVAC shutdown/setback scheduling for non-critical areas - Optimize the economizer control...

  17. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  18. The baryon vector current in the combined chiral and 1/Nc expansions

    SciTech Connect (OSTI)

    Flores-Mendieta, Ruben; Goity, Jose L

    2014-12-01

    The baryon vector current is computed at one-loop order in large-Nc baryon chiral perturbation theory, where Nc is the number of colors. Loop graphs with octet and decuplet intermediate states are systematically incorporated into the analysis and the effects of the decuplet-octet mass difference and SU(3) flavor symmetry breaking are accounted for. There are large-Nc cancellations between different one-loop graphs as a consequence of the large-Nc spin-flavor symmetry of QCD baryons. The results are compared against the available experimental data through several fits in order to extract information about the unknown parameters. The large-Nc baryon chiral perturbation theory predictions are in very good agreement both with the expectations from the 1/Nc expansion and with the experimental data. The effect of SU(3) flavor symmetry breaking for the |Delta S|=1 vector current form factors f1(0) results in a reduction by a few percent with respect to the corresponding SU(3) symmetric values.

  19. South Carolina State 4-H Congress Clemson University, Clemson, SC

    E-Print Network [OSTI]

    Stuart, Steven J.

    South Carolina State 4-H Congress Clemson University, Clemson, SC July 15-18, 2015 The Clemson of Agriculture, South Carolina Counties, Extension Service, Clemson, SC. Issued in furtherance of Cooperative

  20. Studiengangsbericht fr den Studiengang M.Sc. Chemie

    E-Print Network [OSTI]

    Reyle, Uwe

    Studiengangsbericht für den Studiengang M.Sc. Chemie Stand: März 2013 v 5.5 #12;M.Sc. Chemie Stand...........25 #12;M.Sc. Chemie Stand: März 2013 2 TEIL A: Konzeption des Studiengangs Anmerkung: Dieser Teil ist.1.2 Eckdaten zum Studiengang Bezeichnung des Studiengangs: Chemie (Chemistry) Hochschulgrad: M

  1. Link between the Potentially Hazardous Asteroid (86039) 1999 NC43 and the Chelyabinsk meteoroid tenuous

    E-Print Network [OSTI]

    Reddy, Vishnu; Bottke, William F; Pravec, Petr; Sanchez, Juan A; Gary, Bruce L; Klima, Rachel; Cloutis, Edward A; Galád, Adrián; Guan, Tan Thiam; Hornoch, Kamil; Izawa, Matthew R M; Kušnirák, Peter; Corre, Lucille Le; Mann, Paul; Moskovitz, Nicholas; Skiff, Brian; Vraštil, Jan

    2015-01-01

    We explored the statistical and compositional link between Chelyabinsk meteoroid and potentially hazardous asteroid (86039) 1999 NC43 to investigate their proposed relation proposed by Borovi\\v{c}ka et al. (2013). Using detailed computation we confirm that the orbit of the Chelyabinsk impactor is anomalously close to 1999 NC43. We find about (1-3) x 10-4 likelihood of that to happen by chance. Taking the standpoint that the Chelyabinsk impactor indeed separated from 1999 NC43 by a cratering or rotational fission event, we run a forward probability calculation, which is an independent statistical test. However, we find this scenario is unlikely at the about (10-3 -10-2) level. We also verified compositional link between Chelyabinska and 1999NC43. Mineralogical analysis of Chelyabinsk (LL chondrite) and (8) Flora (the largest member of the presumed LL chondrite parent family) shows that their olivine and pyroxene chemistries are similar to LL chondrites. Similar analysis of 1999 NC43 shows that its olivine and ...

  2. Clemson University Water System Clemson, SC

    E-Print Network [OSTI]

    Stuart, Steven J.

    not actually filter or treat our water and therefore depend on our water supplier to furnish us with most Lake Filter Plant which draws its water from the U.S. Army Corps of Engineers' Hartwell Lake Reservoir1 Clemson University Water System Clemson, SC 2002 Annual Water-Quality Report Clemson University

  3. Clemson University Water System Clemson, SC

    E-Print Network [OSTI]

    Stuart, Steven J.

    not actually filter or treat our water and therefore depend on our water supplier to furnish us with most. Water Source The Clemson University Water System is supplied by Duke Water Systems, Hartwell Lake Filter1 Clemson University Water System Clemson, SC 2000 Annual Water-Quality Report Clemson University

  4. Fant's Grove Water System Clemson, SC

    E-Print Network [OSTI]

    Stuart, Steven J.

    requirements during 2002. Since we are only a distribution system, we do not actually filter or treat our water's Grove Water System is supplied by ARJWS, Hartwell Lake Filter Plant which draws its water from the U1 Fant's Grove Water System Clemson, SC 2002 Annual Water-Quality Report Clemson University

  5. Outdoor Laboratory Water System Clemson, SC

    E-Print Network [OSTI]

    Stuart, Steven J.

    2000. Since we are only a distribution system, we do not actually filter or treat our water System is supplied by Duke Water Systems, Hartwell Lake Filter Plant which draw its water from the U1 Outdoor Laboratory Water System Clemson, SC 2000 Annual Water-Quality Report Clemson University

  6. Clemson University Water System Clemson, SC

    E-Print Network [OSTI]

    Stuart, Steven J.

    not actually filter or treat our water and therefore depend on our water supplier to furnish us with most. Water Source The Clemson University Water System is supplied by Duke Water Systems, Hartwell Lake Filter1 Clemson University Water System Clemson, SC 1999 Annual Water-Quality Report Clemson University

  7. Outdoor Laboratory Water System Clemson, SC

    E-Print Network [OSTI]

    Stuart, Steven J.

    1999. Since we are only a distribution system, we do not actually filter or treat our water System is supplied by Duke Water Systems, Hartwell Lake Filter Plant which draw its water from the U1 Outdoor Laboratory Water System Clemson, SC 1999 Annual Water-Quality Report Clemson University

  8. Fant's Grove Water System Clemson, SC

    E-Print Network [OSTI]

    Stuart, Steven J.

    requirements during 2001. Since we are only a distribution system, we do not actually filter or treat our water is supplied by Duke Water Systems, Hartwell Lake Filter Plant which draws its water from the U.S. Army Corps1 Fant's Grove Water System Clemson, SC 2001 Annual Water-Quality Report Clemson University

  9. Clemson University Water System Clemson, SC

    E-Print Network [OSTI]

    Stuart, Steven J.

    not actually filter or treat our water and therefore depend on our water supplier to furnish us with most. Water Source The Clemson University Water System is supplied by Duke Water Systems, Hartwell Lake Filter1 Clemson University Water System Clemson, SC 2001 Annual Water-Quality Report Clemson University

  10. Thermal Phase Transition in Weakly Interacting Large N_C QCD

    E-Print Network [OSTI]

    Joakim Hallin; David Persson

    1998-03-04

    We consider thermal QCD in the large N_C limit, mainly in 1+1 dimensions. The gauge coupling is only taken into account to minimal order, by projection onto colour singlets. An expression for the free energy, exact as N_C goes to infinity, is then obtained. A third order phase transition will occur. The critical temperature depends on the ratio N_C/L, where L is the (infinite) spatial length. In the high temperature limit, the free energy will approach the same value as in the free theory, whereas we have a mesonic like phase at low temperature. Expressions for the quark condensate, , are also obtained.

  11. Oligomerization-dependent Regulation of Motility and Morphogenesis by the Collagen XVIII NC1/Endostatin Domain

    E-Print Network [OSTI]

    Kuo, Calvin J.; LaMontagne, Kenneth R.; Garcia-Cardeñ a, Guillermo; Ackley, Brian D.; Kalman, Daniel; Park, Susan; Christofferson, Rolf; Kamihara, Junne; Ding, Yuan-Hua; Lo, Kin-Ming; Gillies, Stephen; Folkman, Judah; Mulligan, Richard C.; Javaherian, Kashi

    2001-03-19

    –contrast and images were imported into Adobe Photoshop ® or Canvas 5. Where relevant, cells were preincubated with ES monomer (30 min) or Clostridium difficile toxin B (50 ng/ml, 4 h) before addition of hNC1 or ES dimer. HGF (R&D Systems) was used at 50 ng... and morphogene- sis. Human or murine c18 NC1 treatment at the time of HUVEC plating on Matrigel strongly inhibited assembly into tubular structures, with cells remaining dispersed and exhibiting a morphology resembling cells on plastic rather than aggregating...

  12. List of Participants -82nd ACS Colloid and Surface Science Symposium, Raleigh, NC NICHOLAS L. ABBOTT UNIVERSITY OF WISCONSIN USA

    E-Print Network [OSTI]

    Velev, Orlin D.

    List of Participants - 82nd ACS Colloid and Surface Science Symposium, Raleigh, NC NICHOLAS L Colloid and Surface Science Symposium, Raleigh, NC NICK J. CARROLL UNIVERSITY OF NEW MEXICO USA RICHARD L UNIVERSITY USA YONG-JAE CHOI NORTH CAROLINA STATE UNIVERSITY VICTOR CHOW SYNGENTA CROP PROTECTION DAVID A

  13. Total nucleon-nucleon cross sections in large N(c) QCD

    E-Print Network [OSTI]

    Thomas D. Cohen; Boris A. Gelman

    2012-01-27

    We use contracted spin-flavor symmetry which emerges in the large Nc limit of QCD to obtain relations between proton-proton and proton-neutron total cross sections for both polarized and unpolarized scattering. The formalism used is valid in the semi-classical regime in which the relative momentum of the incident nucleons is much larger than the inverse size of the nucleon, provided that certain technical assumptions are met. The relations should be phenomenologically useful provided that Nc=3 is sufficiently large so that the large Nc results have at least semi-quantitative predictive power. The relations are model-independent in the sense that they depend on properties of large Nc QCD only and not on any particular model-dependent details of the nucleon-nucleon interaction. We compare these model-independent results to experimental data. We find the relation for spin-unpolarized scattering works well empirically. For the case of polarized scattering, the data is consistent with the relations but the cross sections are too small to make sharp predictions.

  14. Numerical study of self modulation instability of 1 nC electron bunch at ATF

    SciTech Connect (OSTI)

    Fang Yun; Mori, Warren; Muggli, Patric

    2012-12-21

    The development of self-modulation instability (SMI) is investigated numerically for the 1 nC electron bunch available at Accelerator Test Facility (ATF) of Brookhaven National Laboratory (BNL). Possible experiment based on the simulation results is proposed. All the simulations are performed with the 2D-cylindrically symmetric particle-in-cell code.

  15. North Carolina Department of Revenue Employee's Withholding Allowance CertificateNC-4 EZ

    E-Print Network [OSTI]

    Olszewski Jr., Edward A.

    North Carolina Department of Revenue Employee's Withholding Allowance CertificateNC-4 EZ Web 10 employer withhold North Carolina income tax based on the number of allowances entered on line 1 and any expect to have no tax liability I certify that I am exempt from North Carolina withholding because I meet

  16. An Efficient Algorithm for Mining Erasable Itemsets Using the Difference of NC-Sets

    E-Print Network [OSTI]

    Coenen, Frans

    University of Food Industry Ho Chi Minh City, Viet Nam tuonglecung@gmail.com Bay Vo Ton Duc Thang University: a weight index, a hash table and the "difference" of Node Code Sets (dNC-Sets) to improve the mining time results show that dMERIT+ is more effective than MERIT+ in terms of the runtime. Keywords- data mining

  17. Minutes of Southern Region Animal Waste Team October 6, 2005, Raleigh, NC

    E-Print Network [OSTI]

    , and large animal composting. Sanjay has established a schedule for articles to appear and will contactMinutes of Southern Region Animal Waste Team October 6, 2005, Raleigh, NC Attendance: John Worley Facilitation project funded by CSREES called the National Animal Agriculture Learning Center. Rick Koelsch

  18. 2013 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301)...

  19. Bibtexcitationinfo | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Advanced Scientific Computing Research U.S. Department of Energy SC-21Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301)...

  20. OUT-OF-PLANE SHEAR BEHAVIOR OF SC COMPOSITE STRUCTURES

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Keith Coogler Westinghouse Electric Co. INTRODUCTION Steel-plate composite (SC) structures have been used to expedite construction of the third generation of nuclear power...

  1. Projects | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Sustainability Contact Information Operations Program Management U.S. Department of Energy SC-33Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301)...

  2. RSVP | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Guidelines Award Laureates Ceremony RSVP The Life of Ernest Orlando Lawrence Contact Information The Ernest Orlando Lawrence Award U.S. Department of Energy SC-2Germantown...

  3. Databases | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Reports Workshops Nuclear Physics Related Brochures and Videos Contact Information Nuclear Physics U.S. Department of Energy SC-26Germantown Building 1000 Independence...

  4. Reports | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Reports Workshops Nuclear Physics Related Brochures and Videos Contact Information Nuclear Physics U.S. Department of Energy SC-26Germantown Building 1000 Independence...

  5. Links | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Reports Workshops Nuclear Physics Related Brochures and Videos Contact Information Nuclear Physics U.S. Department of Energy SC-26Germantown Building 1000 Independence...

  6. Workshops | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Reports Workshops Nuclear Physics Related Brochures and Videos Contact Information Nuclear Physics U.S. Department of Energy SC-26Germantown Building 1000 Independence...

  7. March | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301)...

  8. ........... ~sc., T/7b =I NATIONAL AERONAUTICS AND SPACE ADMINISTRATION

    E-Print Network [OSTI]

    Rathbun, Julie A.

    ·.·.·.·.·.·.·.·.·.·.·.· ~sc., T/7b ·=I NATIONAL AERONAUTICS AND SPACE ADMINISTRATION rmrmmmm ,Acting Chief, Corrmunicati 'TIONAL AERONAUTICS AND SPACE ADMINISTRATION MANNED SPACECRAFT CENTER HOUSTON

  9. Spectroscopy of {sup 52,53}Sc

    SciTech Connect (OSTI)

    Bhattacharyya, S.; Rejmund, M.; Navin, A.; Gelin, M.; Mittig, W.; Mukherjee, G.; Rejmund, F.; Roussel-Chomaz, P.; Poves, A.; Theisen, Ch.

    2009-01-15

    Excited states of neutron-rich odd-A and odd-odd Sc isotopes, populated in deep inelastic multinucleon transfer reactions, induced by a {sup 238}U beam on a thin {sup 48}Ca target, have been identified. A strong feeding of both yrast and nonyrast states in such a reaction is illustrated using a combination of a large efficiency spectrometer and a {gamma} detector array. The structure of the populated states is interpreted in terms of the role of the valence proton and neutrons and compared to shell model calculations in the full pf shell.

  10. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

    2010-11-15

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In{sub 0.33}Ga{sub 0.67}N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm{sup 2} at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm{sup 2}. These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  11. Clemson University Water System System No, SC3910006

    E-Print Network [OSTI]

    Stuart, Steven J.

    a distribution system, we do not actually filter or treat our water and therefore depend on our water supplier University Water System is supplied by ARJWS, Hartwell Lake Filter Plant which draws its water from the U1 Clemson University Water System System No, SC3910006 Clemson, SC 2004 Annual Water-Quality Report

  12. Fant's Grove Water System System No, SC390112

    E-Print Network [OSTI]

    Stuart, Steven J.

    a distribution system, we do not actually filter or treat our water and therefore depend on our water supplier University Water System is supplied by ARJWS, Hartwell Lake Filter Plant which draws its water from the U1 Fant's Grove Water System System No, SC390112 Clemson, SC 2004 Annual Water-Quality Report

  13. Clemson University Water System System No, SC3910006

    E-Print Network [OSTI]

    Stuart, Steven J.

    2007. Since we are only a distribution system, we do not actually filter or treat our water of the water daily. Water Source The Clemson University Water System is supplied by ARJWS, Hartwell Lake Filter1 Clemson University Water System System No, SC3910006 Clemson, SC 2007 Annual Water-Quality Report

  14. Clemson University Water System System No, SC3910006

    E-Print Network [OSTI]

    Stuart, Steven J.

    a distribution system, we do not actually filter or treat our water and therefore depend on our water supplier University Water System is supplied by ARJWS, Hartwell Lake Filter Plant which draws its water from the U1 Clemson University Water System System No, SC3910006 Clemson, SC 2005 Annual Water-Quality Report

  15. Fant's Grove Water System System No, SC390112

    E-Print Network [OSTI]

    Stuart, Steven J.

    a distribution system, we do not actually filter or treat our water and therefore depend on our water supplier University Water System is supplied by ARJWS, Hartwell Lake Filter Plant which draws its water from the U1 Fant's Grove Water System System No, SC390112 Clemson, SC 2003 Annual Water-Quality Report

  16. Clemson University Water System System No, SC3910006

    E-Print Network [OSTI]

    Stuart, Steven J.

    a distribution system, we do not actually filter or treat our water and therefore depend on our water supplier University Water System is supplied by ARJWS, Hartwell Lake Filter Plant which draws its water from the U1 Clemson University Water System System No, SC3910006 Clemson, SC 2008 Annual Water-Quality Report

  17. Clemson University Water System System No, SC3910006

    E-Print Network [OSTI]

    Stuart, Steven J.

    2006. Since we are only a distribution system, we do not actually filter or treat our water of the water daily. Water Source The Clemson University Water System is supplied by ARJWS, Hartwell Lake Filter1 Clemson University Water System System No, SC3910006 Clemson, SC 2006 Annual Water-Quality Report

  18. Clemson University Water System System No, SC3910006

    E-Print Network [OSTI]

    Stuart, Steven J.

    a distribution system, we do not actually filter or treat our water and therefore depend on our water supplier University Water System is supplied by ARJWS, Hartwell Lake Filter Plant which draws its water from the U1 Clemson University Water System System No, SC3910006 Clemson, SC 2003 Annual Water-Quality Report

  19. Space time coded code division multiplexing on SC140 DSP 

    E-Print Network [OSTI]

    Menon, Murali P

    2001-01-01

    is implemented on StarCore's SC140 fixed-point DSP core. The very large instruction word architecture of the SC140 is utilized to efficiently implement space-time coded code-division multiplexing system. The goal is to evaluate the suitability of space-time coded...

  20. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  1. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer the radiative recombination rates across the active region. Consequently, the light output power was enhanced

  2. The NC1/Endostatin Domain of Caenorhabditis elegans Type XVIII Collagen Affects Cell Migration and Axon Guidance

    E-Print Network [OSTI]

    Ackley, Brian D.; Crew, Jennifer R.; Elamaa, Harri; Pihlajaniemi, Tania; Kuo, Calvin J.; Kramer, James M.

    2001-03-19

    Type XVIII collagen is a homotrimeric basement membrane molecule of unknown function, whose COOH-terminal NC1 domain contains endostatin (ES), a potent antiangiogenic agent. The Caenorhabditis elegans collagen XVIII homologue, cle-1, encodes three...

  3. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  4. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

    SciTech Connect (OSTI)

    Yang, Weiquan; Becker, Jacob; Liu, Shi; Kuo, Ying-Shen; Li, Jing-Jing; Zhang, Yong-Hang; Landini, Barbara; Campman, Ken

    2014-05-28

    This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300?nm thick GaAs absorber, combined with a 5??m thick Al{sub 0.52}In{sub 0.48}P layer with a textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00?V, short-circuit current densities (J{sub sc}) up to 24.5?mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6?mA/cm{sup 2} and 20.7%, respectively.

  5. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  6. Award Search | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Information High Energy Physics U.S. Department of Energy SC-25Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E:...

  7. Award Search | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Information Fusion Energy Sciences U.S. Department of Energy SC-24Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-4941 F: (301) 903-8584 E:...

  8. Award Search | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Contact Information Nuclear Physics U.S. Department of Energy SC-26Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3613 F: (301) 903-3833 E:...

  9. Award Search | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Biological and Environmental Research U.S. Department of Energy SC-23Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3251 F: (301) 903-5051 E:...

  10. Award Search | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Information Basic Energy Sciences U.S. Department of Energy SC-22Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3081 F: (301) 903-6594 E:...

  11. Award Search | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Small Business Technology Transfer U.S. Department of Energy SC-29Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-5707 F: (301) 903-5488 E:...

  12. Contacts | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    with the national laboratories under SC stewardship on honing pitches to national media. Web Manager Dean Pettersson Phone: 202-287-6991 Email: dean.pettersson@science.doe.gov Dean...

  13. Thermoelectric Transport in a ZrN/ScN Superlattice

    E-Print Network [OSTI]

    2009-01-01

    at Springerlink.com Thermoelectric Transport in a ZrN/ScNthe potential for a high thermoelectric ?gure of merit. Theexperimental studies of the thermoelectric transport in ZrN/

  14. GaAs MOEMS Technology

    SciTech Connect (OSTI)

    SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.; TIGGES, CHRIS P.; RENO, JOHN L.; PEAKE, GREGORY M.; KLEM, JOHN F.; LEAN, JEN; FULLER, CHARLES T.; BURKHART, JEFF; BAUER, THOMAS; SULLIVAN, CHARLES T.

    2003-03-01

    Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vital step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.

  15. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  16. Infrared spectra of ClCN{sup +}, ClNC{sup +}, and BrCN{sup +} trapped in solid neon

    SciTech Connect (OSTI)

    Jacox, Marilyn E.; Thompson, Warren E. [Optical Technology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8441 (United States)

    2007-06-28

    When a mixture of ClCN or BrCN with a large excess of neon is codeposited at 4.3 K with a beam of neon atoms that have been excited in a microwave discharge, the infrared spectrum of the resulting solid includes prominent absorptions of the uncharged isocyanide, ClNC or BrNC, and of the corresponding cation, ClCN{sup +} or BrCN{sup +}. The NC-stretching fundamentals of the isocyanides trapped in solid neon lie close to the positions for their previously reported argon-matrix counterparts. The CN-stretching absorptions of ClCN{sup +} and BrCN{sup +} and the CCl-stretching absorption of ClCN{sup +} appear very close to the gas-phase band centers. Absorptions of two overtones and one combination band of ClCN{sup +} are identified. Reversible photoisomerization of ClCN{sup +} to ClNC{sup +} occurs. The two stretching vibrational fundamentals and several infrared and near infrared absorptions associated with electronic transitions of ClNC{sup +} are observed. Minor infrared peaks are attributed to the vibrational fundamental absorptions of the CX and CX{sup +} species (X=Cl,Br)

  17. Connect with SC | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D- 6 0 4 2budget/about/jobs/ BelowCommunityConnect with SC

  18. SC FPD 360 Mentoring | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D-NicholasReports andRobert N. Thorn, 1967RulonS&SS.SC

  19. SC In Your State | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D- 6 0 4 2 rzNews Archives NewsSC In Your State

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    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  1. Computational analysis of thin film InGaAs/GaAs quantum well solar cells with

    E-Print Network [OSTI]

    Yu, Edward T.

    Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light, Austin, TX 78758, USA * ety@ece.utexas.edu Abstract: Simulations of thin film (~2.5 µm thick) InGaAs/GaAs. Roberts, G. Hill, and C. Calder, "Progress in quantum well solar cells," Thin Solid Films 511­512, 76

  2. GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response

    E-Print Network [OSTI]

    Jalali. Bahram

    into existing multijunction cells either as a means to increase the current or efficiency by using low band gapGaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

  3. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  4. IP ADDRESS HOSTNAME MACHINE TYPE 129.252.130.106 canopus.cse.sc.edu # SUN Ultra10

    E-Print Network [OSTI]

    Bakos, Jason D.

    IP ADDRESS HOSTNAME MACHINE TYPE 129.252.130.106 canopus.cse.sc.edu # SUN Ultra10 129.252.130.107 deneb.cse.sc.edu # SUN Ultra10 129.252.130.108 glensh.cse.sc.edu # SUN Ultra10 129.252.130.111 menkar.cse.sc.edu # SUN Ultra10 129.252.130.112 nunki.cse.sc.edu # SUN Ultra10 129.252.130.113 pollux.cse.sc.edu # SUN

  5. NAZIFE ERKURSUN After my B.Sc. at Dokuz Eylul University (9 September University), Turkey, and

    E-Print Network [OSTI]

    NAZIFE ERKURS¸UN After my B.Sc. at Dokuz Eyl¨ul University (9 September University), Turkey, and my M.Sc. at Middle East Technical University, Turkey studies, I was admitted in a Ph.D. program

  6. Distribution List: For Action: Joseph A. McBrearty, SC-3 John...

    Broader source: Energy.gov (indexed) [DOE]

    SC-OR Patricia Schuneman, SC-CH Jeffrey C. Armstrong, SR David Hess, EMCBC Diane Snow, CBFO Michael Adams, NE-ID Kelly Gele, FE-4451 Department of Energy M&O CONTRACTOR...

  7. Microsoft PowerPoint - 09 Lehman final 1003 SC PM Workshop |...

    Broader source: Energy.gov (indexed) [DOE]

    9 Lehman final 1003 SC PM Workshop More Documents & Publications SC Introduction to Risk Management Audit Report: IG-0532 Microsoft PowerPoint - 16.1045Peer Reviews PanelLehman...

  8. EA-387 Energia Renovable S.C., LLC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energia Renovable S.C., LLC EA-387 Energia Renovable S.C., LLC Order authorizing Energia Renovable to export electric energy to Mexico. EA-387 Energia Renovable (MX).pdf More...

  9. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  10. Experience with OpenMP for MADX-SC

    SciTech Connect (OSTI)

    D'Imperio, Nicholas; Montag, Christophe; Yu, Kwangmin; Kapin, Valery; McIntosh, Eric; Renshall, Harry; Schmidt, Frank

    2014-07-01

    MADX-SC allows the treatment of frozen space charge using beam-beam elements in a thin lattice, i.e. one can take advantage of the standard set-up of MAD-X lattices without the need for specialized codes for the space-charge (SC) evaluation. The idea is to simulate over many turns without the problem of noise as in the PIC SC codes. For the examples under study, like the PS and RHIC, it would be desirable to simulate up to 1 million turns or more. To this end one had to make an effort to optimize the scalar speed and, most importantly, get a speed-up of approximately a factor of 5 using OpenMP.

  11. NC State Chemical Engineering Degrees -B and BS Graduation Name NicknamDgr Maj Grad Date H Hometown StateInitial Employer Employer City StateJob Title

    E-Print Network [OSTI]

    Velev, Orlin D.

    Asst. Chemist William Crawford Piver BS IC 5/30/1906 Wilson NC New York NY Analytical Chemi Peter Hometown StateInitial Employer Employer City StateJob Title Charles Lester Creech BS IC 5 BS IC 5/30/1906 Rowland NC Tennessee Coal, Iron Ensley AL Asst. Chemist Arthur Wynns Gregory BS IC 5

  12. The Chlorella variabilis NC64A Genome Reveals Adaptation to Photosymbiosis, Coevolution with Viruses, and Cryptic Sex

    SciTech Connect (OSTI)

    Blanc, Guillaume; Duncan, Garry A.; Agarakova, Irina; Borodovsky, Mark; Gurnon, James; Kuo, Alan; Lindquist, Erika; Lucas, Susan; Pangailinan, Jasmyn; Polle, Juergen; Salamov, Asaf; Terry, Astrid; Yamada, Takashi; Dunigan, David D.; Grigoriev, Igor V.; Claverie, Jean-Michel; Etten, James L. Van

    2010-05-06

    Chlorella variabilis NC64A, a unicellular photosynthetic green alga (Trebouxiophyceae), is an intracellular photobiont of Paramecium bursaria and a model system for studying virus/algal interactions. We sequenced its 46-Mb nuclear genome, revealing an expansion of protein families that could have participated in adaptation to symbiosis. NC64A exhibits variations in GC content across its genome that correlate with global expression level, average intron size, and codon usage bias. Although Chlorella species have been assumed to be asexual and nonmotile, the NC64A genome encodes all the known meiosis-specific proteins and a subset of proteins found in flagella. We hypothesize that Chlorella might have retained a flagella-derived structure that could be involved in sexual reproduction. Furthermore, a survey of phytohormone pathways in chlorophyte algae identified algal orthologs of Arabidopsis thaliana genes involved in hormone biosynthesis and signaling, suggesting that these functions were established prior to the evolution of land plants. We show that the ability of Chlorella to produce chitinous cell walls likely resulted from the capture of metabolic genes by horizontal gene transfer from algal viruses, prokaryotes, or fungi. Analysis of the NC64A genome substantially advances our understanding of the green lineage evolution, including the genomic interplay with viruses and symbiosis between eukaryotes.

  13. A periodic orbit analysis of the vibrationally highly excited LiNC/LiCN: A comparison with quantum mechanics

    E-Print Network [OSTI]

    Guantes, Raúl

    mechanical calculations, avail- able mainly for the low energy vibrational levels. Now, the LiA periodic orbit analysis of the vibrationally highly excited LiNC/LiCN: A comparison with quantum mechanics R. Prosmiti and S. C. Farantos Institute of Electronic Structure and Laser, Foundation

  14. Mechanisms for peptide S-S and N-C bond cleavage in ECD/ETD mass spectroscopy-

    E-Print Network [OSTI]

    Simons, Jack

    Mechanisms for peptide S-S and N-C bond cleavage in ECD/ETD mass spectroscopy- Anions in Disguise. Skurski, M. Sobczyk, D.Neff http://simons.hec.utah.edu for references #12;How does ECD (or ETD) fragment

  15. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the k·p method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 Å. The joint density of states and optical absorption of a 40/40 Å GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  16. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  17. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  18. The impact of oxygen incorporation during intrinsic ZnO sputtering on the performance of Cu(In,Ga)Se{sub 2} thin film solar cells

    SciTech Connect (OSTI)

    Lee, Kkotnim; Ok, Eun-A; Park, Jong-Keuk; Kim, Won Mok; Baik, Young-Joon; Jeong, Jeung-hyun; Kim, Donghwan

    2014-08-25

    We investigated the impact of incorporating 2% oxygen during intrinsic ZnO sputtering on the efficiency of Cu(In,Ga)Se{sub 2} solar cells. The added oxygen not only reduced the optical absorption loss of the Al-doped ZnO overlaying layer but also improved the electronic properties of the underlying CdS/Cu(In,Ga)Se{sub 2} by increasing carrier density, lowering defect level, and increasing diffusion length, eventually enhancing J{sub SC}, V{sub OC}, and fill factor. It was found that the Na doping concentration was significantly increased around the CdS/Cu(In,Ga)Se{sub 2} junction due to the plasma-activated oxygen. The improved electronic properties are better explained by the increased Na concentration than simply the oxygen-related defect passivation.

  19. Analysis of Stripping to Quasibound Levels in Sc-41 

    E-Print Network [OSTI]

    Youngblood, David H.; Kozub, R. L.; Kenefick, R. A.; Hiebert, John C.

    1970-01-01

    . Percy. W. Hauser and H. Feshbach, Phys. Rev. 87, 366 (1952). B. M. Drisko (unpubliShed. P. H. Stelson and L. Grodzins, Nucl. Data Al, 21 (1965). PHYSICAL REVIEW C VOLUME 2, NUMBER 2 AUGUST 1970 Analysis of Stripping to Quasibound Levels in 4'Sc~ D...) Sc reaction at 40-MeV bombarding energy. Distorted-wave Born-approximation calculations for the proton unstable excited states quasibound by the Coulomb and centrifugal barrier were performed using a form factor corresponding to an unbound...

  20. Utah Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC)Science (SC)Utah Regions National

  1. Utah Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC)Science (SC)Utah Regions

  2. Vermont Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  3. Vermont Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC)Science (SC)Utah

  4. Virginia Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC)Science (SC)UtahVirginia Regions

  5. Virginia Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC)Science (SC)UtahVirginia

  6. Washington Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC)Science (SC)UtahVirginiaDCRegions

  7. Catalysis | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H. Zinn, 1969CALCD Energy(SC)(SC)

  8. CITI Technical Report 01-6 SC-CFS: Smartcard Secured Cryptographic File System

    E-Print Network [OSTI]

    Honeyman, Peter

    CITI Technical Report 01-6 SC-CFS: Smartcard Secured Cryptographic File System Naomaru Itoi Center;le system, are not perfect against these attacks. We have developed SC-CFS, a #12;le system that encrypts #12;les and takes advantage of a smartcard for per-#12;le key generation. SC-CFS counters password

  9. Other Participants 1996 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    , Valley City , ND Venice High School , Los Angeles , CA W. G. Enloe High School , Raleigh , NC West High School , Salt Lake City , UT Woodinville High School , Woodinville , WA...

  10. Other Participants 2006 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Hill High School , Chapel Hill , NC East Rankin Academy , Pelahatchie , MS Edwin O. Smith High School , Mansfield , CT Fergus High School , Lewistown , MT Hillcrest High School...

  11. North Carolina State University, Campus Box 7409, Raleigh, NC 27695 | 919-513-7831 | www.nccleantech.ncsu.edu 8/13/13 Advancing Clean Energy for a Sustainable Economy

    E-Print Network [OSTI]

    . Formerly the NC Solar Center #12;North Carolina State University, Campus Box 7409, Raleigh, NC 27695 | 919. Modifications like engine block or tank heaters can solve this, and switching to a lower blend (B50 or below

  12. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  13. Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    Gao, Feng, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

  14. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    director cds murder nudity soundtrack BBC movie releases footage worth documentary film Blu-rays Blu-ray Ga

  15. ISSN 1670-8539 M.Sc. PROJECT REPORT

    E-Print Network [OSTI]

    Karlsson, Brynjar

    ISSN 1670-8539 M.Sc. PROJECT REPORT Andri Mar Björgvinsson Master of Science Computer Science May;#12;Project Report Committee: Björn Þór Jónsson, Supervisor Associate Professor, Reykjavík University, Iceland, University of Iceland, Iceland Project report submitted to the School of Computer Science at Reykjavík

  16. ISSN 1670-8539 M.Sc. PROJECT REPORT

    E-Print Network [OSTI]

    Karlsson, Brynjar

    ISSN 1670-8539 M.Sc. PROJECT REPORT Þór Sigurðsson Master of Science Computer Science May 2011 ENSEMBLE FORECASTS #12;#12;Project Report Committee: Ari Kristinn Jónsson, Supervisor Rector, Reykjavik, Reykjavik University Project report submitted to the School of Computer Science at Reykjavík University

  17. CN/2011/SC/IHP/PI/2 Sediment Issues & Sediment

    E-Print Network [OSTI]

    Julien, Pierre Y.

    CN/2011/SC/IHP/PI/2 #12;Sediment Issues & Sediment Management in Large River Basins Interim Case Study Synthesis Report International Sediment Initiative Technical Documents in Hydrology UNESCO Office Sediment Initiative Core Group - Members: o Prof. Desmond Walling o Prof. Manfred Spreafico o Prof. Hu

  18. DOE/SC-0060 U. S. Department of Energy

    E-Print Network [OSTI]

    . The risk of conflicts arising from energy shortages and supply cutoffs, as well as the risk of severeDOE/SC-0060 U. S. Department of Energy Office of Science September, 2002 Fusion Energy Sciences Advisory Committee A BURNING PLASMA PROGRAM STRATEGY TO ADVANCE FUSION ENERGY #12;1 Report of the FESAC

  19. Statistische Software (R) Paul Fink, M.Sc.

    E-Print Network [OSTI]

    Cattaneo, Marco

    Statistische Software (R) Paul Fink, M.Sc. Institut für Statistik Ludwig Mathematics Computation 1900 1950 2000 ?Theory Methodology Paul Fink: Statistische Software (R) SoSe 2015 2, · und Computer verwenden, um Daten zu analysieren. Paul Fink: Statistische Software (R) SoSe 2015 3

  20. M.Sc. Thesis Master of Science in Engineering

    E-Print Network [OSTI]

    M.Sc. Thesis Master of Science in Engineering SensibleJournal 2014: A Mobile Life-logging System (English) This text presents a mobile life-logging application called SensibleJournal 2014, which (Danish) Denne afhandling præsenterer en life-logging mobil-app kaldet SensibleJournal 2014, der

  1. Economics Engineering (B.Sc.) Summer Term 2015

    E-Print Network [OSTI]

    Stein, Oliver

    Economics Engineering (B.Sc.) Summer Term 2015 Short version Date: 26.02.2015 Department of Economics and Management KIT - University of the State of Baden-Wuerttemberg and National Research Center of the Helmholtz Association www.kit.edu #12;Publisher: Department of Economics and Management Karlsruhe Institute

  2. Economics Engineering (M.Sc.) Summer Term 2015

    E-Print Network [OSTI]

    Stein, Oliver

    Economics Engineering (M.Sc.) Summer Term 2015 Short version Date: 26.02.2015 Department of Economics and Management KIT - University of the State of Baden-Wuerttemberg and National Research Center of the Helmholtz Association www.kit.edu #12;Publisher: Department of Economics and Management Karlsruhe Institute

  3. Economics Engineering (M.Sc.) Summer Term 2015

    E-Print Network [OSTI]

    Stein, Oliver

    Economics Engineering (M.Sc.) Summer Term 2015 Long version Date: 26.02.2015 Department of Economics and Management KIT - University of the State of Baden-Wuerttemberg and National Research Center of the Helmholtz Association www.kit.edu #12;Publisher: Department of Economics and Management Karlsruhe Institute

  4. Economics Engineering (B.Sc.) Summer Term 2015

    E-Print Network [OSTI]

    Stein, Oliver

    Economics Engineering (B.Sc.) Summer Term 2015 Long version Date: 26.02.2015 Department of Economics and Management KIT - University of the State of Baden-Wuerttemberg and National Research Center of the Helmholtz Association www.kit.edu #12;Publisher: Department of Economics and Management Karlsruhe Institute

  5. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  6. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  7. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  8. Electronic structure investigation of the cubic inverse perovskite Sc3AlN

    E-Print Network [OSTI]

    Magnuson, Martin; Höglund, Carina; Abrikosov, Igor A; Birch, Jens; Hultman, Lars; 10.1103/PhysRevB.78.235102

    2011-01-01

    The electronic structure and chemical bonding of the recently discovered inverse perovskite Sc3AlN, in comparison to ScN and Sc metal have been investigated by bulk-sensitive soft x-ray emission spectroscopy. The measured Sc L, N K, Al L1, and Al L2,3 emission spectra are compared with calculated spectra using first principle density-functional theory including dipole transition matrix elements. The main Sc 3d - N 2p and Sc 3d - Al 3p chemical bond regions are identified at -4 eV and -1.4 eV below the Fermi level, respectively. A strongly modified spectral shape of 3s states in the Al L2,3 emission from Sc3AlN in comparison to pure Al metal is found, which reflects the Sc 3d - Al 3p hybridization observed in the Al L1 emission. The differences between the electronic structure of Sc3AlN, ScN, and Sc metal are discussed in relation to the change of the conductivity and elastic properties.

  9. The Quark Propagator in the NJL Model in a self-consistent 1/Nc Expansion

    E-Print Network [OSTI]

    Daniel Müller; Michael Buballa; Jochen Wambach

    2010-05-04

    The quark propagator is calculated in the Nambu-Jona-Lasinio (NJL) model in a self-consistent 1/Nc-expansion at next-to-leading order. The calculations are carried out iteratively in Euclidean space. The chiral quark condensate and its dependence on temperature and chemical potential is calculated directly and compared with the mean-field results. In the chiral limit, we find a second-order phase transition at finite temperature and zero chemical potential, in agreement with universality arguments. At zero temperature and finite chemical potential, the phase transition is first order. In comparison with the mean-field results, the critical temperature and chemical potential are slightly reduced. We determine spectral functions from the Euclidean propagators by employing the Maximum-Entropy-Method (MEM). Thereby quark and meson masses are estimated and decay channels identified. For testing this method, we also apply it to evaluate perturbative spectral functions, which can be calculated directly in Minkowski space. In most cases we find that MEM is able to reproduce the rough features of the spectral functions, but not the details.

  10. Scientific Achievement Networks of highly photoresponsive crystalline GaSe

    E-Print Network [OSTI]

    Geohegan, David B.

    Scientific Achievement Networks of highly photoresponsive crystalline GaSe nanosheets a crystalline GaSe target was adjusted to directly grow networks of interconnected triangular GaSe crystalline nanosheets of ~ 200 nm size (inset shows atomic

  11. http://www.ecc.u-tokyo.ac.jp/doc/announce/newuser.html http://utroam.nc.u-tokyo.ac.jp/ [

    E-Print Network [OSTI]

    Goda, Keisuke

    OPAC TREEMyOPAC MyOPAC ()10 2 ECCS ECCS http://www.ecc.u-tokyo.ac.jp/doc/announce/newuser.html LAN LANutroam utroamECCS http://utroam.nc.u-tokyo.ac.jp/ [] ECCS http://www.dl.itc.u-tokyo.ac.jp/gacos/faq/gakugai.html http://www.dl.itc.u-tokyo.ac.jp/gacos/ http://www.dl.itc.u-tokyo.ac.jp/gacos/training.html https

  12. Entertainment Technology Center, CMU Post-Graduation Survey Results, Dec 2012, May 2013, and Aug 2013

    E-Print Network [OSTI]

    Alumni Contacts 13 ETC dlist email 11 Intern Search/Company Websites 9 Faculty Contacts 8 Interviews Southwest: AZ, NM, OK, TX 1 West: CA, HI, NV 40 Southeast: AL, AR, FL, GA, KY, LA, MS, NC, PR, SC, TN 3

  13. Development of metallization for GaAs and AlGaAs concentrator solar cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1987-04-01

    A three-layer metallization system was developed for high temperature stability on GaAs and AlGaAs solar cells. The layers are a Pt ohmic contact metal that forms thermally stable compounds with GaAs, a TiN diffusion barrier, and a gold conductor. The solar cell structure was also designed for contact stability, with the key component being a heavily doped GaAs cap layer. Reactively sputtered TiN was found to act as an excellent barrier when deposited under the proper conditions. The conditions were carefully optimized for low resistivity and low stress in the films. A low but nonzero substrate bias during sputtering was found to be important. Solar cells with sputtered metallizations of Pt/TiN/Ti/Pt/Au were found to be thermally stable up to 500/sup 0/C for 15 minutes in vacuum. At 600/sup 0/C there was catastrophic degradation of the cells due to dissociation of uncapped GaAs surfaces. Below this temperature the metallization performed as designed. The Pt and GaAs layers reacted to form a stable PtGa compound layer that gave low contact resistance. There was no penetration of Au or GaAs through the barrier layer. These results are a very encouraging first step leading to stable, reliable GaAs and AlGaAs concentrator cells.

  14. Luminescence Properties of ScPO{sub 4} Single Crystals

    SciTech Connect (OSTI)

    Boatner, L.A.; Trukhin, A.N.

    1999-08-16

    Flux-grown ScPO{sub 4} single crystals exhibit a number of luminescence bands in their x-ray-excited luminescence spectra - including sharp lines arising from rare-earth elements plus a number of broad bands at 5.6 cV, 4.4 eV, and 3 eV. The band at 5.6 eV was attributed to a self-trapped exciton (STE) [l], and it could be excited at 7 eV and higher energies. This luminescence is strongly polarized (P = 70 %) along the optical axes of the crystal and exhibits a kinetic decay time constant that varies from several ns at room temperature to {approximately}10 {micro}s at 60 K and up to {approximately}1 ms at 10 K. It is assumed that the STE is localized on the SC ions. The band at 3 eV can be excited in the range of the ScPO{sub 4} crystal transparency (decay time = 3 to 4 {micro}s.) This band is attributed to a lead impurity that creates different luminescence centers. At high temperatures, the band at 4.4 eV is dominant in the x-ray-excited TSL and afterglow spectra. Its intensity increases with irradiation time beginning at zero at the initial irradiation time. The 4.4 eV band does not appear in a fast process under a pulsed electron beam, showing that accumulation is necessary for its observation. A sample of ScPO{sub 4} doped with vanadium exhibited a prevalent band at 4.4 eV at T = 480 K.

  15. Improved input and output couplers for SC acceleration structure

    SciTech Connect (OSTI)

    Solyak, N.; Gonin, I.; Latina, A.; Lunin, A.; Poloubotko, V.; Yakovlev, V.; /Fermilab

    2009-04-01

    Different couplers are described that allow the reduction of both transverse wake potential and RF kick in the SC acceleration structure of ILC. A simple rotation of the couplers reducing the RF kick and transverse wake kick is discussed for both the main linac and bunch compressors, along with possible limitations of this method. Designs of a coupler unit are presented which preserve axial symmetry of the structure, and provide reduced both the RF kick and transverse wake field.

  16. OUT-OF-PLANE SHEAR BEHAVIOR OF SC COMPOSITE STRUCTURES

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergy Bills and ReduceNovember 2014Marketing2014) |D D O TECHNOLOGIES FOR SC WALLS

  17. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  18. Ohmic contacts to n-GaSb 

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  19. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  20. Supercomputing on a Budget | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    beyond 100 GPUs." SC'11 Proceedings of the 2011 International Conference for High Performance Computing, Networking, Storage and Analysis, Article No. 70 (2011). DOI: 10.1145...

  1. Final Report: DOE Project: DE-SC-0005399 Linking the uncertainty...

    Office of Scientific and Technical Information (OSTI)

    Final Report: DOE Project: DE-SC-0005399 Linking the uncertainty of low frequency variability in tropical forcing in regional climate change Citation Details In-Document Search...

  2. Dr. Daniel A. Hitchcock | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301)...

  3. DOE Applied Math Summit | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301)...

  4. ASCR News INCITE | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Links Contact Information Advanced Scientific Computing Research U.S. Department of Energy SC-21Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301)...

  5. Other Participants 1995 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    News Media WDTS Home Contact Information National Science Bowl U.S. Department of Energy SC-27 Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P:...

  6. Other Participants 1997 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    News Media WDTS Home Contact Information National Science Bowl U.S. Department of Energy SC-27 Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P:...

  7. Other Participants 2002 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    School, Aurora, CO South Aiken High School , Aiken , SC Southside High School , Fort Smith , AR St. Croix Country Day School , Kingshill, VI Stockdale High School , Bakersfield...

  8. Other Participants 2000 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Paul M. Dorman High School , Spartanburgh , SC Punahou Academic High School , Honolulu , HI Reno High School , Reno , NV Shawnee Mission South High School , Shawnee Mission , KS...

  9. Other Participants 1993 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    News Media WDTS Home Contact Information National Science Bowl U.S. Department of Energy SC-27 Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 P:...

  10. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  11. Baryons and Low-Density Baryonic Matter in 1+1 Dimensional Large N_c QCD with Heavy Quarks

    E-Print Network [OSTI]

    Prabal Adhikari; Thomas D. Cohen; Arec Jamgochian; Nilay Kumar

    2012-12-10

    This paper studies baryons and baryonic matter in the combined large N_c and heavy quark mass limits of QCD in 1+1 dimension. In this non-relativistic limit, baryons are composed of N_c quarks that interact, at leading order in N_c, through a color Coulomb potential. Using variational techniques, very accurate calculations of single baryon masses and interaction energies of low-density baryon crystal are performed. These results are used to cross-check a general numerical approach applicable for arbitrary quark masses and baryon densities recently proposed by Bringoltz, which is based on a lattice in a finite box with periodic boundary conditions. The Bringoltz method differs from a previous approach of Salcedo, et al. in its treatment of a finite box effect - namely gauge configurations that wind around the box. One might expect these effects to be small for large enough boxes, in which the baryon density approaches zero to high accuracy at the edges. However, the effects of these windings appear to be quite large even in such boxes. The large mass infinite volume calculations performed here are consistent with the results of numerical calculations using the Bringoltz method. The calculation of the baryon crystal interaction energy requires the assumption that at low-densities the ground state is composed of individual baryons, each in a color-singlet state and orthogonal to each other. This assumption is plausible but ad hoc in that one can construct configurations in which the entire state is color-singlet but cannot be broken into individual color-singlet baryons. The interaction energy of low-density baryon crystals calculated with the assumption is consistent with numerical results based on Bringoltz's approach suggesting that the assumption is justified. This further supports a similar assumption that was made in 3+1 dimensions, where no alternative means of calculation exist.

  12. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  13. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys Weili Liua and Alexander A. Balandin have investigated theoretically the thermoelectric effects in wurtzite GaN crystals and AlxGa1-xN-based alloys may have some potential as thermoelectric materials at high temperature. It was found

  14. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  15. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  16. A hole accelerator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-10-13

    The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

  17. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D?=0.53(×2.1±1) cm² s?¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  18. DOE SC Exascale Requirements Review: High Energy Physics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  19. DOE/SC Lehman Review of US ITER Project, USIPO,

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  20. The calculated rovibronic spectrum of scandium hydride, ScH

    E-Print Network [OSTI]

    Lodi, Lorenzo; Tennyson\\, Jonathan

    2015-01-01

    The electronic structure of six low-lying electronic states of scandium hydride, $X\\,{}^{1}\\Sigma^+$, $a\\,{}^{3}\\Delta$, $b\\,{}^{3}\\Pi$, $A\\,{}^{1}\\Delta$ $c\\,{}^{3}\\Sigma^+$, and $B\\,{}^{1}\\Pi$, is studied using multi-reference configuration interaction as a function of bond length. Diagonal and off-diagonal dipole moment, spin-orbit coupling and electronic angular momentum curves are also computed. The results are benchmarked against experimental measurements and calculations on atomic scandium. The resulting curves are used to compute a line list of molecular ro-vibronic transitions for $^{45}$ScH.

  1. DOE - Office of Legacy Management -- Savannah River Swamp - SC 01

    Office of Legacy Management (LM)

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  2. Full Program | U.S. DOE Office of Science (SC)

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  3. Gallery | U.S. DOE Office of Science (SC)

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  4. Gcreport | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  5. Georgia Regions | U.S. DOE Office of Science (SC)

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  6. Georgia Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  7. Idaho Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  8. Idaho Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  9. Illinois Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  10. Illinois Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  11. Maine Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  12. Poster Presentations | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  13. SDM | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  14. September | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  15. September | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  16. September | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  17. Tennessee Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC) RedefiningSign Up| U.S.IVDOETennessee

  18. Tennessee Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC) RedefiningSign Up|

  19. Texas Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC) RedefiningSign Up|Texas Regions

  20. Texas Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  1. UNC EFRC | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  2. Washington Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC)Science

  3. Wisconsin Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC)ScienceWest Virginia RegionsWisconsin

  4. Wisconsin Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC)ScienceWest Virginia

  5. Wyoming Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC)ScienceWest VirginiaWorking

  6. Wyoming Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC)ScienceWest VirginiaWorkingWyoming

  7. aa | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  8. august | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC)ScienceWest Advanced ScientificAugust

  9. july | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  10. october | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  11. DOE SC Exascale Requirements Reviews: High Energy Physics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  12. SC11 Education Program Applications due July 31

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  13. SC web highlight (Technical Report) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

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  14. 2009 Awards | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  15. 2010's | U.S. DOE Office of Science (SC)

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  16. 2010's | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  17. 2013 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  18. 2013 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  19. NP Budget | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  20. NP Budget | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  1. Obligations | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

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  2. Phone List | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D-Nicholas Turro, 1982Science (SC)PeidongPhone List

  3. Phone List | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D-Nicholas Turro, 1982Science (SC)PeidongPhone

  4. Program Contacts | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D-Nicholas Turro,Science (SC)Probing NuclearProgram

  5. Program Contacts | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D-Nicholas Turro,Science (SC)Probing

  6. Sharlene Weatherwax | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D-NicholasReports andRobert(SC) Shape Matters

  7. 2012 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H. Zinn, 1969 The EnricoOffice ofScience (SC) 12

  8. 2012 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H. Zinn, 1969 The EnricoOffice ofScience (SC)

  9. Agenda 20130128 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H. Zinn, 1969 The EnricoOffice2 » AAbout(SC)

  10. Local Map | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4 » Inside Ice Under High30,Science (SC)About

  11. Nov 2011 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4 » Inside IceResearchScience (SC) NorthEast1

  12. Nov 2013 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4 » Inside IceResearchScience (SC)

  13. November 2000 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4 » Inside IceResearchScience (SC)0 Advanced

  14. November 2006 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4 » Inside IceResearchScience (SC)0 Advanced6

  15. November 2007 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4 » Inside IceResearchScience (SC)0

  16. November 2009 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4 » Inside IceResearchScience (SC)09 Advanced

  17. November 2010 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4 » Inside IceResearchScience (SC)09

  18. November 2014 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4 » Inside IceResearchScience (SC)094

  19. Nsacmembers2007 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4 » Inside IceResearchScience (SC)0947

  20. Nsacmembers2008 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4 » Inside IceResearchScience (SC)09478

  1. Nsacmembers2009 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4 » Inside IceResearchScience (SC)094789

  2. Reports | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4 »ProgrammingScience (SC)Programs »

  3. Sally Mitchell | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4 »ProgrammingScience(SC)

  4. Sample Questions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4 »ProgrammingScience(SC)Regionals » High

  5. Sample Questions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4 »ProgrammingScience(SC)Regionals »

  6. Staff Directories | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4Office of Science (SC)EPSCoR Home » About »

  7. Structural Biology | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4Office of Science (SC)EPSCoR Home »

  8. Student Participants | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4Office of Science (SC)EPSCoR Home »Student

  9. Exascale Challenges | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalterOptimizing(SC) Electron coolingScientific

  10. February | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalterOptimizing(SC) ElectronAugust 20012FYFebruary

  11. February | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalterOptimizing(SC) ElectronAugust

  12. February | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalterOptimizing(SC) ElectronAugustFebruary Advanced

  13. Fellow Stories | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalterOptimizing(SC) ElectronAugustFebruary

  14. Final Discussion | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalterOptimizing(SC)Fermi NationalFermi NationalFinal

  15. Florida Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalterOptimizing(SC)Fermi NationalFermi

  16. Florida Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalterOptimizing(SC)Fermi NationalFermiFlorida Regions

  17. Science Headlines | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D- 6 0 4 2 rzNews Archives NewsSC InScience Headlines News

  18. Science Highlights | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D- 6 0 4 2 rzNews Archives NewsSC InScience Headlines

  19. Science Highlights | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D- 6 0 4 2 rzNews Archives NewsSC InScience

  20. Science Highlights | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D- 6 0 4 2 rzNews Archives NewsSC InScienceScience

  1. Science Highlights | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D- 6 0 4 2 rzNews Archives NewsSC InScienceScienceScience

  2. 2005 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D- 6 0 4 2 rzNews ArchivesDOE Office of Science (SC)5

  3. 2005 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D- 6 0 4 2 rzNews ArchivesDOE Office of Science (SC)55

  4. Administration | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D- 6 0 4 2 rzNewsOffice of Science (SC)Office

  5. Award Laureates | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D- 6 0 4 2 rzNewsOffice of(SC) Atomic-LevelAward

  6. Award Laureates | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D- 6 0 4 2 rzNewsOffice of(SC) Atomic-LevelAwardAward

  7. Awards | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D- 6 0 4 2 rzNewsOffice of(SC)

  8. Awards | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thI D- 6 0 4 2 rzNewsOffice of(SC)Awards Small Business

  9. China SC Exact Equipment Co LTD | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OFAMERICA'SHeavy Electricals Ltd BHEL JumpCMNACelt PowerWind Power CoSC Exact

  10. Parking and Transportation Services Lot SC108 Student Contract Agreement Addendum

    E-Print Network [OSTI]

    Minnesota, University of

    Parking and Transportation Services Lot SC108 Student Contract Agreement Addendum NEW: Due at Buford and Randall Avenues. Parking will remain available in the southwest area of the lot as well as pedestrian access to campus. I understand and agree that the contract parking space in Lot SC108 is only

  11. Downlink W-CDMA performance analysis and receiver implmentation on SC140 Motorola DSP 

    E-Print Network [OSTI]

    Ghosh, Kaushik

    2004-09-30

    -point implementation of the W-CDMA downlink receiver algorithm on a general-purpose digital signal processor (StarCore SC140 by Motorola). The very large instruction word architecture of SC140 core is utilized to generate optimal implementation, to meet the real time...

  12. ISIS 9.0: SC Degree Audit 1 Updated: 09.08.15

    E-Print Network [OSTI]

    Capogna, Luca

    ISIS 9.0: SC ­ Degree Audit 1 Updated: 09.08.15 Degree Audit for Students ISIS 9.0 Degree Audit options to view additional information. #12;ISIS 9.0: SC ­ Degree Audit 2 Updated: 09.08.15 Degree Audit for Students ISIS 9.0 Report Detail Various links are available for specific information regarding your degree

  13. Irradiation requirements of Nb3Sn based SC magnets electrical insulation

    E-Print Network [OSTI]

    McDonald, Kirk

    Irradiation requirements of Nb3Sn based SC magnets electrical insulation developed within the Eu and Power Engineering #12;Outline · Motivation of launching EuCARD irradiation task · Nb3Sn SC magnet coils electrical insulation candidates · EuCARD insulators certification conditions · Post irradiation tests

  14. M.Sc. PSYCHOLOGY -Application Checklist (Last updated: July 10, 2015)

    E-Print Network [OSTI]

    Northern British Columbia, University of

    M.Sc. PSYCHOLOGY - Application Checklist (Last updated: July 10, 2015) IMPORTANT NOTES 1 to: www.unbc.ca/financial-aid. 5. Applicants to the M.Sc. in Psychology must have an Honours degree in Psychology or an undergraduate degree in Psychology (or a related field) with research experience. ALL

  15. M.Sc. PSYCHOLOGY -Application Checklist (Last updated: November 27, 2013)

    E-Print Network [OSTI]

    Northern British Columbia, University of

    M.Sc. PSYCHOLOGY - Application Checklist (Last updated: November 27, 2013) IMPORTANT NOTES 1 to UNBC Financial Aid & Awards by the February 15th Deadline. 6. Applicants to the M.Sc. in Psychology must have an Honours degree in Psychology or an undergraduate degree in Psychology (or a related field

  16. A Machine Learning Approach to Link Adaptation for SC-FDE System

    E-Print Network [OSTI]

    Pillow, Jonathan

    versus just the post-processing SNR estimate. Simulation results indicate that the proposed algorithm peak-to- average-power ratio, allowing more power efficient hardware architectures [1]. For example, SC of nonlinearities [2]. A variation of SC-FDE is used for the uplink in Third Generation Part- nership Project Long

  17. School of Marine Science and Policy Policy Statement Sc/1/13

    E-Print Network [OSTI]

    Firestone, Jeremy

    School of Marine Science and Policy Policy Statement Sc/1/13 (Replaces Policy Statement Sc/1/12) Graduate Program 1. Administration a) The School of Marine Science and Policy (SMSP) offers the following degrees and concentrations administered within the four graduate-level programs of Marine Biosciences

  18. SC-1, S-2: Standing Waves and Sound Name_______________________ Lab Worksheet Group member names__________________________________

    E-Print Network [OSTI]

    Winokur, Michael

    SC-1, S-2: Standing Waves and Sound Name_______________________ Lab Worksheet Group member names. SC-1 Transverse Standing Waves on Strings: In this lab you will do Procedures I and II about to help you visualize how standing waves are generated by the superposition two traveling waves. Procedure

  19. Office of South Carolina Residency University of South Carolina*Columbia, SC 29208* (803) 777-4060* (803) 777-3977 (fax)* resident@mailbox.sc.edu

    E-Print Network [OSTI]

    Office of South Carolina Residency University of South Carolina*Columbia, SC 29208* (803/I will not provide more than 49% of his/her support while attending the University of South Carolina AGREEMENT: We

  20. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  1. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells

    E-Print Network [OSTI]

    Weinstein, Benard.A.

    recently that the temperature shifts of the photo- and electroluminescence EL peak energies in Nichia greenV/GPa for the green and blue diodes, respectively. The observed pressure coefficients are much lower than those characteristic of the energy gap in GaN ( 40 meV/GPa) or the energy gap in InN ( 33 meV/GPa). This kind

  2. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  3. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  4. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore »to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  5. IEEE Energy2030 Atlanta, GA USA

    E-Print Network [OSTI]

    Gross, George

    of an aggregation of battery vehicles for the provision of frequency regulation ­ requiring very fast response timesIEEE Energy2030 Atlanta, GA USA 17-18 November, 2008 Design of a Conceptual Framework for the V2G in common is the batteries, which provide good storage capacity that can be effectively integrated

  6. 495 Tech Way NW Atlanta, GA 30318

    E-Print Network [OSTI]

    Li, Mo

    495 Tech Way NW Atlanta, GA 30318 404.385.0384 comments@energy.gatech.edu Copyright 2014 · Georgia concerns, low-cost, clean, secure energy solutions will be necessary to address our global energy needs and sustain our way of life. Georgia Tech Energy Innovations The Strategic Energy Institute's scientists

  7. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  8. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    it was discovered by Davydov et al.1 and con- firmed by independent studies2,3 that its band gap is small, EG InN =0 The conduction band offset at GaN/AlN interface was estimated as EQW=0.7 EG AlN -EG GaN =1918 meV. The nanoN/GaN/AlN QW. The depth of the nanogroove is calculated as E0=0.8 EG GaN -EG InxGa1-xN . The band gap of InxGa1

  9. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    epitaxial growth of indium gallium nitride (InGaN) layers capable of producing high-efficiency LEDs when combined with chip-on-board packaging techniques. The proposed...

  10. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lüth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?×?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  11. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  12. Emission and Excitation Spectra of ZnO:Ga and ZnO:Ga,N Ceramics

    E-Print Network [OSTI]

    P. A. Rodnyi; I. V. Khodyuk; E. I. Gorokhova; S. B. Mikhrin; P. Dorenbos

    2010-09-07

    The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, Em(0) = 3.367 +/- 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.

  13. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Giddings, A. D.; Prosa, T. J.; Larson, D. J. [CAMECA Instruments, Inc., 5500 Nobel Drive, Madison, Wisconsin 53711 (United States); Mano, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  14. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur; Akdemir, Hande Günay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  15. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  16. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  17. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  18. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  19. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  20. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  1. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  2. {\\sc CosmoNet}: fast cosmological parameter estimation in non-flat models using neural networks

    E-Print Network [OSTI]

    T. Auld; M. Bridges; M. P. Hobson

    2007-03-16

    We present a further development of a method for accelerating the calculation of CMB power spectra, matter power spectra and likelihood functions for use in cosmological Bayesian inference. The algorithm, called {\\sc CosmoNet}, is based on training a multilayer perceptron neural network. We compute CMB power spectra (up to $\\ell=2000$) and matter transfer functions over a hypercube in parameter space encompassing the $4\\sigma$ confidence region of a selection of CMB (WMAP + high resolution experiments) and large scale structure surveys (2dF and SDSS). We work in the framework of a generic 7 parameter non-flat cosmology. Additionally we use {\\sc CosmoNet} to compute the WMAP 3-year, 2dF and SDSS likelihoods over the same region. We find that the average error in the power spectra is typically well below cosmic variance for spectra, and experimental likelihoods calculated to within a fraction of a log unit. We demonstrate that marginalised posteriors generated with {\\sc CosmoNet} spectra agree to within a few percent of those generated by {\\sc CAMB} parallelised over 4 CPUs, but are obtained 2-3 times faster on just a \\emph{single} processor. Furthermore posteriors generated directly via {\\sc CosmoNet} likelihoods can be obtained in less than 30 minutes on a single processor, corresponding to a speed up of a factor of $\\sim 32$. We also demonstrate the capabilities of {\\sc CosmoNet} by extending the CMB power spectra and matter transfer function training to a more generic 10 parameter cosmological model, including tensor modes, a varying equation of state of dark energy and massive neutrinos. {\\sc CosmoNet} and interfaces to both {\\sc CosmoMC} and {\\sc Bayesys} are publically available at {\\tt www.mrao.cam.ac.uk/software/cosmonet}.

  3. Accurate characterization and improvement of GaAs microstrip attenuation 

    E-Print Network [OSTI]

    Carroll, James Mason

    1992-01-01

    Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

  4. Measurement of airborne fission products in Chapel Hill, NC, USA from the Fukushima Dai-ichi reactor accident

    E-Print Network [OSTI]

    S. MacMullin; G. K. Giovanetti; M. P. Green; R. Henning; R. Holmes; K. Vorren; J. F. Wilkerson

    2012-10-03

    We present measurements of airborne fission products in Chapel Hill, NC, USA, from 62 days following the March 11, 2011, accident at the Fukushima Dai-ichi nuclear power plant. Airborne particle samples were collected daily in air filters and radio-assayed with two high-purity germanium (HPGe) detectors. The fission products I-131 and Cs-137 were measured with maximum activities of 4.2 +/- 0.6 mBq/m^3 and 0.42 +/- 0.07 mBq/m^3 respectively. Additional activity from I-131, I-132, Cs-134, Cs-136, Cs-137 and Te-132 were measured in the same air filters using a low-background HPGe detector at the Kimballton Underground Research Facility (KURF).

  5. U.S. Virgin Islands Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC) RedefiningSign(SC)(SC)U.S.

  6. Final Report for DOE Grant Number DE-SC0001481

    SciTech Connect (OSTI)

    Liang, Edison

    2013-12-02

    This report covers research activities, major results and publications supported by DE-SC-000-1481. This project was funded by the DOE OFES-NNSA HEDLP program. It was a joint research program between Rice University and the University of Texas at Austin. The physics of relativistic plasmas was investigated in the context of ultra-intense laser irradiation of high-Z solid targets. Laser experiments using the Texas Petawatt Laser were performed in the summers of 2011, 2012 and 2013. Numerical simulations of laser-plasma interactions were performed using Monte Carlo and Particle-in-Cell codes to design and support these experiments. Astrophysical applications of these results were also investigated.

  7. Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Chung, Jinwook W. (Jinwook Will)

    2008-01-01

    In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

  8. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  9. Proceedings of the 3rd International Conference on Air Pollution from Agricultural Operations Research Triangle Park, NC October 12-15, 2003

    E-Print Network [OSTI]

    Kentucky, University of

    Proceedings of the 3rd International Conference on Air Pollution from Agricultural Operations Research Triangle Park, NC October 12-15, 2003 - 1 - AMMONIA EMISSIONS FROM U.S. POULTRY HOUSES: PART II.S. commercial layer houses (Heber et al., 2002; Maghirang and Manbeck, 1993). Research with regard to reducing

  10. Quantification of Dune Response during a 6-Day Nor'easter, Outer Banks, NC Kate L. Brodie1, Nick J. Spore1, Christy Swann2

    E-Print Network [OSTI]

    US Army Corps of Engineers

    using Coastal Lidar And Imaging System (CLARIS) during the first dune collision event following cross-shore erosion of recently pushed, un-vegetated dunes reached 2 m/day. Variations in foreduneQuantification of Dune Response during a 6-Day Nor'easter, Outer Banks, NC Kate L. Brodie1, Nick J

  11. Resonant tunneling with high peak to valley current ratio in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers at room temperature

    SciTech Connect (OSTI)

    Chen, D. Y.; Sun, Y.; He, Y. J.; Xu, L.; Xu, J.

    2014-01-28

    We have investigated carrier transport in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V{sup 2}) as a function of 1/V and ln(I) as a function of V{sup 1/2}. Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratio (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages.

  12. Clean Transportation | www.nccleantech.ncsu.edu North Carolina State University, Campus Box 7409, Raleigh, NC 27695 | 919-513-7831| www.nccleantech.ncsu.edu | Nov. `13

    E-Print Network [OSTI]

    Technology project with funding from the N.C. Department of Transportation. E85 (ETHANOL) RETAIL STATIONS Motor Fleet Management's E85 fueling site on Blue Ridge Road in Raleigh. State agencies, colleges. These groups can also purchase E10 and E85 in all 100 counties through the state purchasing contract (www

  13. Proceedings of the 3rd International Conference on Air Pollution from Agricultural Operations Research Triangle Park, NC October 12-15, 2003

    E-Print Network [OSTI]

    Kentucky, University of

    Research Triangle Park, NC October 12-15, 2003 1 AMMONIA EMISSIONS FROM U.S. POULTRY HOUSES: PART III.S. Reasonable estimates of ammonia emissions are needed by the poultry industry so that they can participate in discussions about their industry's impact on local and regional air quality. 1 Associate Professor

  14. Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers

    E-Print Network [OSTI]

    Jalali. Bahram

    Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico optical, electrical, and spectral response characteristics of three-stack InAs/GaAs quantum dot solar

  15. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  16. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  17. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    solar cells are triple-junction concentrator devices, with each junction efficiently col- lecting subcell in a multijunction de- vice. GaAs0.66 P0.34 single-junction solar cells with Eg = 1.83 eV were56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar

  18. ANTH 376: GENOMICS & ANTHROPOLOGY 4 credit hours (satisfies an SC requirement)

    E-Print Network [OSTI]

    1 ANTH 376: GENOMICS & ANTHROPOLOGY 4 credit hours (satisfies an SC variation, health and evolution. Extended Course Description The Human Genome Project and recent advances in genome sequencing techniques have made it possible

  19. DOE Applied Math Summit | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Advanced Scientific Computing Research U.S. Department of Energy SC-21Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-7486 F: (301) 903-4846...

  20. THORTVEITITE (Sc2Si2O7), THE FIRST SOLAR , John R. Beckett1

    E-Print Network [OSTI]

    Rossman. George R.

    of Technology, Pasadena, CA 91125, USA; 2 High Pressure Science and Engineering Center and Department/or Y- stabilized cubic zirconia) [3,4], and lakargiite (CaZrO3) [5]. MUR1 contains three of these Sc

  1. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  2. PROPERTIES OF THE LOW-LYING NEGATIVE PARITY STATES IN 45Sc

    E-Print Network [OSTI]

    Boyer, Edmond

    'expérience. Abstract. 2014 The electromagnetic decays of the negative parity states in 45Sc up to an excitation energy of 2107 keV have been investigated via the 42Ca(03B1, p03B3)45Sc reaction at a bombarding energy of 10 a very detailed test of these models. The energy levels and their decay properties have been investigated

  3. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  4. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  5. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  6. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  7. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  8. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  9. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  10. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  11. EngenuitySC Commercialization and Entrepreneurial Training Project

    SciTech Connect (OSTI)

    Hughes, Meghan; Hutton, Katherine R

    2012-12-31

    A team led by EngenuitySC has performed education and outreach on development of advanced energy markets that will enable wider use of clean energy technologies. This report details the efforts that have made significant advances to improve the market place through education, outreach, and increased communications between industry members. The project resulted in two self-funded industry clusters known as the Fuel Cell Collaborative and NuHub. This project has focused on building and strengthening the leading clean energy clusters in South Carolina: nuclear energy and fuel cell technologies. For the nuclear industry, a new cluster was developed that is now known as NuHub. This cluster has already engaged over 25 nuclear industry leaders or suppliers, four public sector partners, six community economic development foundations, and nearly ten academic partners in a 175 mile radius between Augusta, Georgia and Charlotte, North Carolina. Our outreach has touched over 2,000 stakeholders through the website alone, not including the public audiences and members of the business community reached through news stories and releases that were distributed to over 620 print and online publications. NuHub has established a formal leadership structure, developed subcommittees to focus on industry issues, instituted educational programs for the workforce, and created an industry funding structure that will sustain the industry cluster and mission. NuHub has participated in a wide-variety of community building and outreach activities since its formation under this grant. In the two years since its creation in 2010, we have initiated efforts focused in four main areas that correlate with the four NuHub subcommittees including: innovation, workforce development, industry engagement, and marketing and communications. NuHub successfully raised over $160,000 in both public and private funding, which has supported work to grow the cluster and engage partners including NuScale, Fluor, and Holtec International for research about deployment of advanced small modular reactor (SMR) technologies. The workforce training efforts from NuHub have focused on assisting existing industry to fill positions needed to construct and operate new nuclear plants being built at the VC Summer plant in Jenkinsville, SC and at Plant Votgle in Augusta, Georgia �¢���� both of whom are constructing the first nuclear reactors (Westinghouse AP 1000 units), to be built in over 30 years. This includes a partnership with Midlands Technical College to train reactor operators and the development of training facilities to support workforce development activities. It is anticipated that approximately 70 students a year will be trained through these programs in the next five years, and it will be expanded to meet new industry needs.

  12. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  13. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  14. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  15. ANSI X3H2-97-010 ISO IEC JTC1 SC21 WG3 DBL MAD-245

    E-Print Network [OSTI]

    Snodgrass, Richard T.

    ANSI X3H2-97-010 ISO IEC JTC1 SC21 WG3 DBL MAD-245 I S O INTERNATIONAL ORGANIZATION and A. Steiner. Adding Valid Time to SQL Temporal. 1996. ISO IEC JTC1 SC21 WG3 DBL MAD-146r2, ANSI X3H2 Temporal. 1996. ISO IEC JTC1 SC21 WG3 DBL MAD-147r2, ANSI X3H2-96-502r1. 6 Snodgrass, R.T., Addendum

  16. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

    E-Print Network [OSTI]

    Atwater, Harry

    GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition with the world record efficiency is a metamorphic triple junction GaInP/GaAs/Ge cell.6 Alternatively, wafer

  17. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    -emitting diodes (LEDs) are considered the new generation lighting sources due to their advantages in power Society of America OCIS codes: 230.3670, 230.5590, 160.6000. Nitride-based high-power light devoted to the development of high-brightness GaN-based LEDs [3­5]. Lateral hole spreading is one

  18. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  19. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  20. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  1. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  2. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  3. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  4. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19?}m{sup ?2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  5. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  6. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  7. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  8. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  9. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  10. A Unique Dust Formation Episode in the SC-Type Star UY Cen

    E-Print Network [OSTI]

    Justin D. R. Steinfadt; Geoffrey C. Clayton; Tom Lloyd Evans; Tom Williams

    2005-06-21

    We report the first detection of new dust formation in an SC star. The prototype of the SC stars, UY Cen, underwent a decline of 2 magnitudes in the V-band. The SC stars show pulsational variations and have 60 micron excesses indicating past dust formation. It has been suggested that as a star evolves from oxygen rich to carbon rich, there is a short period of time when C/O$~1 that the star appears spectroscopically as an SC star and ceases to produce dust. The SC star, BH Cru, has shown large spectroscopic and pulsation period variations in only 30 years, indicating rapid evolution but it has shown no sign of new dust formation. UY Cen has not shown any pulsation or spectroscopic variations accompanying the onset of its dust formation. In addition, UY Cen did not show emission in the resonance lines of Na I, K I or Rb I when it was at its faintest, although these lines were a feature of the carbon stars R Lep and V Hya during similar faint phases.

  11. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  12. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    sound velocity in GaN. The cut off wave vector is given by where NA is the Avogadro number, is the mass

  13. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  14. Istanbul,Turkey & Atlanta, GA Istanbul,Turkey

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Istanbul,Turkey & Atlanta, GA Istanbul,Turkey & Atlanta, GA 2012 Media, Journalism and Business for departure to Istanbul,Turkey Day 9 Depart for Istanbul; guided cultural visit upon arrival; group dinner Day business leaders; site visits to local universities Day 18 UPS and the value of logistics inTurkey Day 19

  15. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  16. Computer Science Master's (M.Sc.) and Doctoral (Ph.D.) Programs www.cs.usask.ca/gradstudies

    E-Print Network [OSTI]

    Saskatchewan, University of

    Computer Science Master's (M.Sc.) and Doctoral (Ph.D.) Programs www.cs.usask.ca/gradstudies Computer Science Master's (M.Sc.) and Doctoral (Ph.D.) Programs Expertise. The Master's and Doctoral programs in computer science offer students high quality

  17. CarolinaTiesA newsletter for University of South Carolina parents www.sa.sc.edu/parents

    E-Print Network [OSTI]

    CarolinaTiesA newsletter for University of South Carolina parents www.sa.sc.edu/parents Nestled a few recommendations. "Students should visit the Columbia Visitor's Bureau (CVB) website, www up-to-date with the CVB's online calendar of events, as well as like "Experience Columbia, SC

  18. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-?m transport was observed within an electron spin lifetime of 1.2?ns at room temperature when using an in-plane electric field of 1.75?kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  19. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  20. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  1. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  2. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  3. Bixbyite- and anatase-type phases in the system Sc-Ta-O-N

    SciTech Connect (OSTI)

    Stork, A.; Schilling, H. [Institut fuer Chemie, TU Berlin, Strasse des 17. Juni 135, D-10623 Berlin (Germany); Wessel, C.; Wolff, H. [Institut fuer Anorganische Chemie, RWTH Aachen, Landoltweg 1, D-52056 Aachen (Germany); Boerger, A. [Institut fuer Physikalische und Theoretische Chemie, TU Braunschweig, Hans-Sommer-Str. 10, D-38106 Braunschweig (Germany); Baehtz, C. [HASYLAB at DESY, Netkestr. 85, D-22603 Hamburg (Germany); Becker, K.-D. [Institut fuer Physikalische und Theoretische Chemie, TU Braunschweig, Hans-Sommer-Str. 10, D-38106 Braunschweig (Germany); Dronskowski, R. [Institut fuer Anorganische Chemie, RWTH Aachen, Landoltweg 1, D-52056 Aachen (Germany); Lerch, M., E-mail: lerch@chem.tu-berlin.d [Institut fuer Chemie, TU Berlin, Strasse des 17. Juni 135, D-10623 Berlin (Germany)

    2010-09-15

    The aim of our study was to modify the basis compound ss-TaON, which crystallizes in the monoclinic baddeleyite-type, by incorporation of appropriate dopant ions, in order to obtain anion-deficient cubic fluorite-type phases, which are of interest as solids with mobile nitrogen ions. For this purpose, scandium-doped tantalum oxide nitrides were prepared by ammonolysis of amorphous oxide precursors. An unexpected variety of phases with different structural features was observed: bixbyite-type phases of general composition Sc{sub x}Ta{sub 1-x}(O,N){sub y} with 0.33{<=}x{<=}1 and 1.7{<=}y{<=}1.9, yellow colored metastable anatase-type phases such as Sc{sub 0.1}Ta{sub 0.9}O{sub 1.2}N{sub 0.8} or Sc{sub 0.15}Ta{sub 0.85}O{sub 1.3}N{sub 0.7} and, additionally, anosovite-type phases Sc{sub x}Ta{sub 3-x}O{sub 2x}N{sub 5-2x} with 0{<=}x{<=}1.05. Selected phases were investigated by UV/vis spectroscopy. Anatase- and anosovite-type compounds show brilliant colors. In the anatase-type phase, a possible anion ordering was examined by theoretical methods. Additionally, energy calculations on phase stability were performed for Sc{sub x}Ta{sub 1-x}O{sub 1+2x}N{sub 1-2x} in the baddeleyite, rutile, and anatase structure types with varying amounts of dopants. - Graphical abstract: New anatase- and bixbyite-type phases obtained as single-phase samples in the system Sc-Ta-O-N.

  4. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  5. 5124 Treybrooke Dr. Wilmington, NC, 28403 Tel: (910)962-3583, E-mail: ganl@uncw.edu Ph.D., experimental nuclear & particle physics, 1998, University of Manitoba, Winnipeg, Canada

    E-Print Network [OSTI]

    Olszewski Jr., Edward A.

    @uncw.edu Education Ph.D., experimental nuclear & particle physics, 1998, University of Manitoba, Winnipeg, Canada M.Sc., theoretical nuclear & particle physics, 1988, Peking University, Beijing, China B.Sc., nuclear physics, 1985, Peking University, Beijing, China Professional Appointments 08/2010-present Professor of Physics

  6. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  7. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  8. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ) In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells

  9. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating and a saturation of the optical output power at high injection currents. It is shown that the optical power

  10. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

    E-Print Network [OSTI]

    Florida, University of

    , creating both electron traps and increasing electron tunneling through the defect states [4Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron 2011 a b s t r a c t AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative

  11. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

  12. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    between GaN and a sapphire substrate, the dislocation scattering mechanism and the electron spillover

  13. Glenn Seaborg Trail | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalterOptimizing(SC)FermiFundingGenome To(SC)Glenn

  14. Washington DC Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC)Science (SC)UtahVirginiaDC Regions

  15. Washington DC Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe23-24, 2011Science (SC)Science (SC)UtahVirginiaDC

  16. Applications of Nuclear Science Archives | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H. Zinn, 1969 The8, 2010Application(SC)(SC)

  17. FY 2009 SC Laboratory Performance Report Cards | U.S. DOE Office of Science

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H. Zinn,Christopher Charges/Reports »(SC) 9 SC

  18. Top Teams for 2014 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalter H.4Office of ScienceTeresa(SC) Third(SC)Top

  19. Atomistic description of the electronic structure of InxGa1xAs alloys and InAsGaAs superlattices

    E-Print Network [OSTI]

    Kent, Paul

    quantum-wells15,20 (InxGa1 xAs)n /InP on InP and (InxGa1 xAs)n /GaAs on GaAs, and v GaAs-embedded InAs quantum dots.21­23 We wish to provide a uniform the- oretical description of the electronic structure-period dependence of the band offsets and interband transitions of InAs/GaAs systems on InP and GaAs substrates. DOI

  20. Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 m; accepted 3 June 2013; published online 19 June 2013) InGaN/GaN light-emitting diodes (LEDs) with graded , which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which

  1. Low-frequency noise in GaNAlGaN heterostructure field-effect transistors at cryogenic temperatures

    E-Print Network [OSTI]

    Pala, Nezih

    that the 1/f noise in GaN/AlGaN HFETs might be caused by electron tunneling from the channel to the traps was practically independent of the frequency of analysis. The model linking this maximum to the electron tunneling Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics

  2. Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

    SciTech Connect (OSTI)

    Spitzer, M.B.; Vernon, S.M.; Wolfson, R.G.; Tobin, S.P.

    1984-01-01

    The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

  3. Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

  4. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    be well suited for exploitation of long wavelength quantum dot and dilute nitride technology, resulting in single lateral mode emission from an In0.17Ga0.83As double quantum well laser. Introduction: Lasers based on the GaAs materials system offer advan- tages over their InP counterparts, such as the use

  5. Improved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering by nanoparticles

    E-Print Network [OSTI]

    Yu, Edward T.

    of QDs in the context of our work is attractive for achieving long wavelength absorption in solar cells enhancement at all infrared wave- lengths in the device photocurrent spectrum. Epitaxial layer structuresImproved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering

  6. Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

  7. SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

    E-Print Network [OSTI]

    Florida, University of

    for spacecraft and other long-term sensing applications. However, hydrogen is a dangerous gas for storage for monitoring leakage of hydrogen storage equipment and fuel tanks for spacecraft and hydrogen fuel cellSnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

  8. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations 

    E-Print Network [OSTI]

    Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01

    A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

  9. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    photovoltaic efficiency of 39% at 236 suns is achieved by a triple-junction GaInP- GaInAs-Ge tandem solar cell [1]. While the achievable efficiency of triple-junction tandem solar cells is restricted to about 40% [2], modeling results show that a tandem solar cell of five junctions or greater, or an equivalent

  10. Other Participants 1992 | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    , Lubbock , TX Lyons Township High School , La Grange , IL Mississippi School for Math & Science, Columbus , MS Newnan High School , Newnan , GA Pembroke Hill High School ,...

  11. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  12. Machine Tool Accuracy Analysis M.A.Sc. Candidate: Ricky Chan

    E-Print Network [OSTI]

    Bone, Gary

    Machine Tool Accuracy Analysis M.A.Sc. Candidate: Ricky Chan Supervisor: Dr. Stephen Veldhuis Abstract: CNC machining is an essential part of almost all manufacturing industries. Machine accuracy surfaces are made for esthetics and aerodynamic purposes. Machining free formed surfaces require intricate

  13. Global Warming? Reid A. Bryson Ph.D., D.Sc., D.Engr.1

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    Global Warming? Reid A. Bryson Ph.D., D.Sc., D.Engr.1 The Built-in Nonsense Detector Hardly a day Warming". A quick search of the internet uncovers literally hundreds of items about "Global Warming, usually meaning "Global Warming" or some aspect thereof. Whole generations of graduate students have been

  14. SIAM J. ScI. COMPUT. Vol. 14, No. 1, pp. 159-184, January 1993

    E-Print Network [OSTI]

    Beylkin, Gregory

    SIAM J. ScI. COMPUT. Vol. 14, No. 1, pp. 159-184, January 1993 () 1993 Society for Industrial 06520 (coifman@loml .math. yale. edu). Departments of Mathematics and Computer Science, Yale University-9012751, IBM grant P00038437, and Department of Energy contract DE-AC03-76SF00098. lLawrence Berkeley

  15. CPM-SC-IFDMA--A Power Efficient Transmission Scheme for Uplink LTE

    E-Print Network [OSTI]

    Rahman, Raina

    2011-04-07

    In this thesis we have proposed a power efficient transmission scheme, CPM-SC-IFDMA, for uplink LTE. In uplink LTE, efficiency of the transmitter power amplier is a major concern, as the transmitter is placed in the mobile device which has limited...

  16. Physics basis for a spherical torus power plant S.C. Jardin a,

    E-Print Network [OSTI]

    Najmabadi, Farrokh

    Physics basis for a spherical torus power plant S.C. Jardin a, *, C.E. Kessel a , J. Menard a , T for a fusion power plant. A special class of wall-stabilized high-b high-bootstrap fraction low-aspect-ratio tokamak; Fusion power plant; Plasma operating regime 1. Introduction The most significant difference

  17. Questions? Ask either in class or via email: loriz@sc.edu. Processes of Global

    E-Print Network [OSTI]

    Questions? Ask either in class or via email: loriz@sc.edu. Processes of Global Environmental Change global concepts. 2) Evaluate interactions between human and environmental systems at a variety of scales governs climate over geologic time including the physics of the greenhouse effect. The second part

  18. DOE Award # DE-SC0008085 Close-Out Report for UIUC Portion of Grant

    SciTech Connect (OSTI)

    Teixeira, Kristina Anderson; DeLucia, Evan H

    2014-11-20

    This is the final technical report for the University of Illinois (UIUC) portion of grant # SC0008085 (CARBON DYNAMICS OF FOREST RECOVERY UNDER A CHANGING CLIMATE: FORCINGS, FEEDBACKS, AND IMPLICATIONS FOR EARTH SYSTEM MODELING), which closed June 14, 2014. The grant remains active at the Smithsonian.

  19. M.Sc. Project Report Reykjavk University -School of Computer Science

    E-Print Network [OSTI]

    Karlsson, Brynjar

    M.Sc. Project Report Reykjavík University - School of Computer Science Gylfi Þór Guðmundsson Master of Science June 2009 Solving General Game Playing Puzzles using Heuristic Search #12;#12;Project Report, Reykjavík University Project report submitted to the School of Computer Science at Reykjavík University

  20. Modules M.Sc. Biochemistry and Molecular Biology Titel of the module Development of Microbial Strains

    E-Print Network [OSTI]

    Diekmann, Martin

    Modules M.Sc. Biochemistry and Molecular Biology Titel of the module Development of Microbial Compulsory/ elective course Core elective course Teaching methods Method SWS CP Lecture Seminar Lab course 4 features. Adoption of methods and results from fundamental research with respect to industrial application

  1. Modules M.Sc. Biochemistry and Molecular Biology Title of module Recombinant proteins

    E-Print Network [OSTI]

    Diekmann, Martin

    Modules M.Sc. Biochemistry and Molecular Biology Title of module Recombinant proteins Term are to provide · a basic understanding of concepts in the design of constructs for recombinant proteins · develop, analytical electrophoresis, primer design · transformation and expression of proteins in bacterial

  2. Accelerator Compiler for the VENICE Vector Processor B.A.Sc, Harbin Institute of Technology, 2009

    E-Print Network [OSTI]

    Lemieux, Guy

    Accelerator Compiler for the VENICE Vector Processor by Zhiduo Liu B.A.Sc, Harbin Institute the compiler design for VENICE, a new soft vector processor (SVP). The compiler is a new back-end target compilation from high-level programs into VENICE assembly code, thus avoiding the process of writing assembly

  3. Dept of Comp Sc & Eng 1 Mohanty VLSI Design and CAD Laboratory

    E-Print Network [OSTI]

    Mohanty, Saraju P.

    in low power VLSI design to prepare next generation CAD tools for automatic design One Faculty and one to strong research infrastructure including Sun Fire server, Sun Workstations and Tera Bytes of storage all. #12;Dept of Comp Sc & Eng 4 Mohanty Research Interests CAD for Nanometer VLSI Circuits Low Power

  4. DiSC: Benchmarking Secure Chip DBMS Nicolas Anciaux, Luc Bouganim, Philippe Pucheral, and Patrick Valduriez

    E-Print Network [OSTI]

    DiSC: Benchmarking Secure Chip DBMS Nicolas Anciaux, Luc Bouganim, Philippe Pucheral, and Patrick irrelevant. The main problem faced by secure chip DBMS designers is to be able to assess various design choices and trade-offs for different applications. Our solution is to use a benchmark for secure chip DBMS

  5. Spring/Summer 2013Registered Charity No. SC 009009 Millionth visitor to the Sir

    E-Print Network [OSTI]

    Levi, Ran

    Aberdeen binding acquired ................. 6 Rare railway report . 7 Library team shortlisted for national to national role........ 9 Purchase of The Novels & Tales of Henry James ..............................10Spring/Summer 2013Registered Charity No. SC 009009 Millionth visitor to the Sir Duncan Rice Library

  6. REGISTRATION HANDBOOK AND ScHEDULE oF CouRsEs

    E-Print Network [OSTI]

    Mojzsis, Stephen J.

    REGISTRATION HANDBOOK AND ScHEDULE oF CouRsEs +; SPRING 1992 BOULDEROFFICE OF THE REGISTRAR #12;T his revised and expanded Registration Handbook andSchedule ofCourses contains all the informa- tion or procedures change at the last minu~e; will you, receive further information. Pl~e keep this handbook with you

  7. Simo Haanp (ed.) Researcher M.Sc., Aalto University, School of Engineering,

    E-Print Network [OSTI]

    Kaski, Samuel

    and Research in the Nordic Countries. 11 Vision for a Sustainable Urban Environment: identifying conflicts ... Sustainable Urban Environments 187 ... Universities and Sustainability 203 ... Sustainable policiesSimo Haanpää (ed.) Researcher M.Sc., Aalto University, School of Engineering, Centre for Urban

  8. IN FORMATION PU BLIC ATION SC H EME TITLE Agency plan for The Australian National University

    E-Print Network [OSTI]

    1 | IN FORMATION PU BLIC ATION SC H EME TITLE Agency plan for The Australian National University on its website. It will be directly accessible from the webpage foi.anu.edu.au and be identified possible, provide online content that can be searched by web browsers Provide a search function

  9. CpSc212 Goddard Notes Chapter 5 More about Classes

    E-Print Network [OSTI]

    Goddard, Wayne

    . The header file lists the data and gives prototypes for the functions. Many people put the 10 #12;public Mathematical functions are available in the library cmath. Note that angles are repre- sented in radiansCpSc212 ­ Goddard ­ Notes Chapter 5 More about Classes 5.1 More about Member Functions One can

  10. A channel estimation algorithm for Space Time OFDM systems on the Starcore SC140 DSP 

    E-Print Network [OSTI]

    Gopalan, Preeti

    2002-01-01

    and is robust over many different channel profiles. The system is implemented on Starcore's SC140 fixed point DSP core. The aim of this research is to study the fixed point implementation of this algorithm on a general purpose DSP, comment on the performance...

  11. Quantifying Errors Associated with Satellite Sampling of Offshore Wind S.C. Pryor1,2

    E-Print Network [OSTI]

    1 Quantifying Errors Associated with Satellite Sampling of Offshore Wind Speeds S.C. Pryor1,2 , R, Bloomington, IN47405, USA. Tel: 1-812-855-5155. Fax: 1-812-855-1661 Email: spryor@indiana.edu 2 Dept. of Wind an attractive proposition for measuring wind speeds over the oceans because in principle they also offer

  12. T-527: OpenSC Smart Card Serial Number Multiple Buffer Overflow Vulnerabilities

    Broader source: Energy.gov [DOE]

    OpenSC is prone to multiple buffer-overflow vulnerabilities because the application fails to perform adequate boundary checks on user-supplied input. Attackers may leverage these issues to execute arbitrary code in the context of the application. Failed attacks will cause denial-of-service conditions.

  13. NEW COURSE NUMBER: ENG ME 579 Extra information on MN/SC579: Microelectronic Device Manufacturing

    E-Print Network [OSTI]

    Lin, Xi

    NEW COURSE NUMBER: ENG ME 579 Extra information on MN/SC579: Microelectronic Device Manufacturing for manufacturing engineering students to take for the following reason. Your future careers in manufacturing are undoubtedly most promising for the manufacturing of what is often referred to as "high technology" areas

  14. Final Report for Research supported by US DoE grant DE-SC0006721

    SciTech Connect (OSTI)

    Brizard, Alain J.

    2014-08-27

    A final report is presented on research carried out by Alain J. Brizard (Principal Investigator) with funding provided by the U.S. DoE grant No. DE-SC0006721 during the period of 08/01/2011 to 07/31/2014.

  15. The UK financial mathematics M.Sc. A.E. Kyprianou

    E-Print Network [OSTI]

    .Sc. in financial mathematics exemplifies a practice of following market demand for the sake of income, without due, highlighting some of the incongruities and future dangers of free-market education. The UK financial paralleled the manifold expansion of the financial services industry and, ac- cordingly, has transformed

  16. -13C CarbonylChemical Shielding Tensors: Comparing SC,F, MBPT( 2) ,

    E-Print Network [OSTI]

    Simons, Jack

    -13C CarbonylChemical Shielding Tensors: Comparing SC,F, MBPT( 2) , and DFT: In this wark, we calculate the 13Cnuclear magnetic resonance chemical shielding tensors for 18 carbonyl (DFT)formaliams were used with gauge including atomie orbitals (GIAO)fI?calculate the shielding tensors

  17. DESIGNING ORTHONORMAL SUBSPACE TRACKING ALGORITHMS S.C. Douglas and X.Sun

    E-Print Network [OSTI]

    Douglas, Scott C.

    DESIGNING ORTHONORMAL SUBSPACE TRACKING ALGORITHMS S.C. Douglas and X.Sun Department of Electrical Engineering Southern Methodist University Dallas, Texas 75275 USA ABSTRACT Subspace tracking is important for many commu- nications and signal processing tasks. Many of the simplest subspace tracking methods

  18. ANSI X3H296152 ISO/IEC JTC1/SC21/WG3 DBL ?

    E-Print Network [OSTI]

    Snodgrass, Richard T.

    ANSI X3H2­96­152 ISO/IEC JTC1/SC21/WG3 DBL ? I S O INTERNATIONAL ORGANIZATION FOR STANDARDIZATION: Adding Transaction Time to SQL/Temporal Source: ANSI Expert's Contribution Authors: Richard T. Snodgrass., M. H. B¨ohlen, C. S. Jensen and A. Steiner Adding Valid Time to SQL/Temporal, ANSI X3H2

  19. ANSI X3H295486 ISO/IEC JTC1/SC21/WG3 DBL LHR?

    E-Print Network [OSTI]

    Snodgrass, Richard T.

    ANSI X3H2­95­486 ISO/IEC JTC1/SC21/WG3 DBL LHR­? I S O INTERNATIONAL ORGANIZATION: ANSI Expert's Contribution Author: Richard T. Snodgrass Abstract: This change proposal addresses assignment rules for datetimes LHR­046 9 Response to LHR­043 ANSI X3H2­95­487 10 The TSQL2 Temporal Query

  20. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  1. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  2. High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

    SciTech Connect (OSTI)

    Wang, Wenbo; He, Xingli; Ye, Zhi E-mail: jl2@bolton.ac.uk; Wang, Xiaozhi; Mayrhofer, Patrick M.; Gillinger, Manuel; Bittner, Achim; Schmid, Ulrich

    2014-09-29

    AlN and AlScN thin films with 27% scandium (Sc) were synthesized by DC magnetron sputtering deposition and used to fabricate surface acoustic wave (SAW) devices. Compared with AlN-based devices, the AlScN SAW devices exhibit much better transmission properties. Scandium doping results in electromechanical coupling coefficient, K{sup 2}, in the range of 2.0%???2.2% for a wide normalized thickness range, more than a 300% increase compared to that of AlN-based SAW devices, thus demonstrating the potential applications of AlScN in high frequency resonators, sensors, and high efficiency energy harvesting devices. The coupling coefficients of the present AlScN based SAW devices are much higher than that of the theoretical calculation based on some assumptions for AlScN piezoelectric material properties, implying there is a need for in-depth investigations on the material properties of AlScN.

  3. Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

    SciTech Connect (OSTI)

    Luna, E.; Ishikawa, F.; Batista, P. D.; Trampert, A. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin (Germany)

    2008-04-07

    The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki's segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.

  4. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  5. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  6. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  7. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  8. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing, E-mail: jqpan@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Chen, Weixi [State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China); Ding, Ying, E-mail: Ying.Ding@glasgow.ac.uk [School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  9. UW 10 Year Capital Plan -Proposed Projects by Tier and Program Use UW Office of Planning and Budgeting Project Name State BldgAcct Local Donor Grant DebtC DebtNC State BldgAcct Local Grant Donor DebtC DebtNC

    E-Print Network [OSTI]

    Van Volkenburgh, Elizabeth

    Renovation - C4C and MFF - - 27,080 - - - - - - - - - - -31,500 4,420 Student LifeStudent LifeStudent Life and Budgeting Project Name State BldgAcct Local Donor Grant DebtC DebtNC State BldgAcct Local Grant Donor DebtC,000 - - - - - - - - - - -9,250 1,250 UWMC IT Core Applications and Infrastructure - - 29,500 - - - - - - 140,000 - - - -169,500

  10. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  11. Electrical degradation mechanisms of RF power GaAs PHEMTs

    E-Print Network [OSTI]

    Villanueva, Anita A. (Anita Ariel), 1978-

    2007-01-01

    GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability ...

  12. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  13. ANSI X3H297010 ISO/IEC JTC1/SC21/WG3 DBL MAD245

    E-Print Network [OSTI]

    Snodgrass, Richard T.

    ANSI X3H2­97­010 ISO/IEC JTC1/SC21/WG3 DBL MAD­245 I S O INTERNATIONAL ORGANIZATION/SC21/WG3 DBL MAD­146r2, ANSI X3H2­96­501r2.) [5] Snodgrass, R. T., M. H. B¨ohlen, C. S. Jensen and A. Steiner. Adding Transaction Time to SQL/Temporal. 1996. (ISO/IEC JTC1/SC21/WG3 DBL MAD­147r2, ANSI X3H2

  14. Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2014-03-21

    We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

  15. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    SciTech Connect (OSTI)

    Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

    2014-11-03

    We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  16. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    SciTech Connect (OSTI)

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2014-11-07

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  17. The origin and reduction of switching noise in GaAs/AlGaAs lateral gated devices

    E-Print Network [OSTI]

    Davies, John H.

    to cryogenic temperature with all gates grounded to the substrate to protect against electrostatic effects in AlGaAs: electrons `freeze' into deep traps ­ DX centres ­ below about 150 K. The occupation of donors

  18. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01

    assuming the material growth technology allows for all ofand a relatively immature growth technology, as well as theof the art for InGaN growth technology. Epitaxial growth of

  19. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

    SciTech Connect (OSTI)

    Sztein, Alexander, E-mail: asztein@umail.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Bowers, John E.; DenBaars, Steven P.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States); Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2014-01-27

    A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9?W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.

  20. Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors 

    E-Print Network [OSTI]

    Johnson, Derek Wade

    2014-07-31

    production is projected to consume ~100,000 wafers per year by 2015 (Yole Development, “Power GaN – 2012 Edition”), this manufacturing breakthrough represents potential savings of ~$17 million per year....

  1. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

    E-Print Network [OSTI]

    Florida, University of

    2011; published online 21 March 2011 A subnanometer thick interfacial oxide layer present between used to characterize a Ni/AlGaN interfacial oxide layer with subnanometer thickness. The semiconducting

  2. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    SciTech Connect (OSTI)

    Khmissi, H.; Baira, M.; Bouzaieene, L.; Saidi, F.; Maaref, H. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Sfaxi, L. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Universite de Sousse Faculte des Sciences de Monastir, Avenue de l'Environnement 5019 Monastir (Tunisia); Bru-Chevallier, C. [Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, INSA-LYON, 7, Avenue Jean Capelle, Bat. Blaise Pascal, 69621 Villeurbanne (France)

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E{sub 1}-HH{sub 1}) and the first excited state (E{sub 2}-HH{sub 2}). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  3. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  4. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  5. ANSI X3H2-96-582 ISO IEC JTC1 SC21 WG3 DBL MAD-203

    E-Print Network [OSTI]

    Snodgrass, Richard T.

    ANSI X3H2-96-582 ISO IEC JTC1 SC21 WG3 DBL MAD-203 I S O INTERNATIONAL ORGANIZATION: Change Proposal Title: Addendum to Valid- and Transaction-time Proposals Source: ANSI Expert. Steiner Adding Valid Time to SQL Temporal, ANSI X3H2-96-501r2, ISO IEC JTC 1 SC 21 WG 3 DBL-MAD-146r2

  6. ANSI X3H296013r1 ISO/IEC JTC1/SC21/WG3 DBL MCI99

    E-Print Network [OSTI]

    Snodgrass, Richard T.

    ANSI X3H2­96­013r1 ISO/IEC JTC1/SC21/WG3 DBL MCI­99 I S O INTERNATIONAL ORGANIZATION: Informational Title: A Road Map of Additions to SQL/Temporal Source: ANSI Expert's Contribution Author: Richard/Temporal change proposal, ANSI X3H2­95­485, ISO/IEC JTC1/SC21/WG3 DBL LHR­096, De­ cember, 1995, 40 pages. [10

  7. ANSI X3H296582 ISO/IEC JTC1/SC21/WG3 DBL MAD203

    E-Print Network [OSTI]

    Snodgrass, Richard T.

    ANSI X3H2­96­582 ISO/IEC JTC1/SC21/WG3 DBL MAD­203 I S O INTERNATIONAL ORGANIZATION: Change Proposal Title: Addendum to Valid­ and Transaction­time Proposals Source: ANSI Expert and A. Steiner Adding Valid Time to SQL/Temporal, ANSI X3H2­96­501r2, ISO/IEC JTC 1/SC 21/WG 3 DBL

  8. Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well

    E-Print Network [OSTI]

    Jalali. Bahram

    Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

  9. A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    amplifier using GaN- HEMTs-on-Sapphire. I INTRODUCTION GaN HEMTs have enormous potential for realizing high-power Traveling Wave Power Amplifier circuit (TWPA)[1][2] for realization of wideband power amplifiersWE4A-5 A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs Jane J

  10. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect (OSTI)

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  11. Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a

    E-Print Network [OSTI]

    Haller, Gary L.

    . INTRODUCTION Triple-junction metamorphic solar cells have reached ef- ficiencies as high as 41.1% by combiningMetamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a S. Tomasulo,1 P-yP solar cells. Tensile-strained GaAsxP1-x buffers grown on GaAs using unoptimized conditions

  12. FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS

    E-Print Network [OSTI]

    Atwater, Harry

    FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS RobynAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction characterization shows high quality solar cell materials. Preliminary 1-sun AM1.5D testing of the triple junction solar cell shows promising

  13. Supercritical CO2 direct cycle Gas Fast Reactor (SC-GFR) concept.

    SciTech Connect (OSTI)

    Wright, Steven Alan; Parma, Edward J., Jr.; Suo-Anttila, Ahti Jorma; Al Rashdan, Ahmad; Tsvetkov, Pavel Valeryevich; Vernon, Milton E.; Fleming, Darryn D.; Rochau, Gary Eugene

    2011-05-01

    This report describes the supercritical carbon dioxide (S-CO{sub 2}) direct cycle gas fast reactor (SC-GFR) concept. The SC-GFR reactor concept was developed to determine the feasibility of a right size reactor (RSR) type concept using S-CO{sub 2} as the working fluid in a direct cycle fast reactor. Scoping analyses were performed for a 200 to 400 MWth reactor and an S-CO{sub 2} Brayton cycle. Although a significant amount of work is still required, this type of reactor concept maintains some potentially significant advantages over ideal gas-cooled systems and liquid metal-cooled systems. The analyses presented in this report show that a relatively small long-life reactor core could be developed that maintains decay heat removal by natural circulation. The concept is based largely on the Advanced Gas Reactor (AGR) commercial power plants operated in the United Kingdom and other GFR concepts.

  14. High-Gradient Tests of the Single-Cell SC Cavity with a Feedback Waveguide

    SciTech Connect (OSTI)

    Yakovlev, V.; Solyak, N.; Wu, G.; Ge, M.; Gonin, I.; Khabiboulline, T.; Ozelis, J.; Rowe, A. [Fermilab, Batavia, IL 60510 (United States); Avrakhov, P.; Kanareykin, A. [Euclid TechLabs, LLC, Solon, Ohio 44139 (United States); Rathke, J. [AES, Medford, NY 11763 (United States)

    2010-11-04

    Use of a superconducting (SC) traveling-wave accelerating (STWA) structure with a small phase advance per cell, rather than a standing-wave structure, may provide a significant increase in the accelerating gradient in the ILC linac [1]. For the same surface electric and magnetic fields, the STWA achieves an accelerating gradient 1.2 larger than TESLA-like standing-wave cavities. In addition, the STWA allows longer acceleration cavities, reducing the number of gaps between them. However, the STWA structure requires a SC feedback waveguide to return the few hundreds of MW of circulating RF power from the structure output to the structure input. A test single-cell cavity with feedback was designed and manufactured to demonstrate the possibility of proper processing to achieve a high accelerating gradient. The first results of high-gradient tests of a prototype 1.3 GHz single-cell cavity with feedback waveguide will be presented.

  15. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore »the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  16. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  17. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  18. Physics Basis for the ARIES-ST Power Plant S.C. Jardin,

    E-Print Network [OSTI]

    California at San Diego, University of

    Physics Basis for the ARIES-ST Power Plant T.K. Mau, a S.C. Jardin, b C.E. Kessel, b J.E. Menard, b -- ARIES-ST, a fusion power plant design based on the spherical tokamak concept, has many attractive] as a potential power plant and volumetric neutron source. At the beginning of 1999, the ARIES Group has completed

  19. ANSI X3H295487 ISO/IEC JTC1/SC21/WG3 DBL LHR?

    E-Print Network [OSTI]

    Snodgrass, Richard T.

    ANSI X3H2­95­487 ISO/IEC JTC1/SC21/WG3 DBL LHR­? I S O INTERNATIONAL ORGANIZATION Status: ANSI Expert's Contribution Title: Response to LHR­043, ``Fixing possible problems in SQL­042 7 Fixing some possible problems in SQL/T LHR­043 8 Response to LHR­042 ANSI X3H2­95­486 9 The TSQL

  20. Metal contacts on ZnSe and GaN

    SciTech Connect (OSTI)

    Duxstad, K J [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  1. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment

    SciTech Connect (OSTI)

    Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-10-07

    The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

  2. Technical Session II Talks | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    .pdf file (6.2MB) GaAs Detector (Durbin) .pdf file (450KB) Advanced Neutron Detectors (Smith) .pdf file (818KB) Neutron Imaging System (Bingham) .pdf file (1.1MB) SR Advanced...

  3. EMP Attachment 3 DOE-SC PNNL Site Dose Assessment Guidance

    SciTech Connect (OSTI)

    Snyder, Sandra F.

    2011-12-21

    This Dose Assessment Guidance (DAG) describes methods to use to determine the Maximally-Exposed Individual (MEI) location and to estimate dose impact to that individual under the U.S. Department of Energy Office of Science (DOE-SC) Pacific Northwest National Laboratory (PNNL) Site Environmental Monitoring Plan (EMP). This guidance applies to public dose from radioactive material releases to the air from PNNL Site operations. This document is an attachment to the Pacific Northwest National Laboratory (PNNL) Environmental Monitoring Plan (EMP) and describes dose assessment guidance for radiological air emissions. The impact of radiological air emissions from the U.S. Department of Energy Office of Science (DOE-SC) PNNL Site is indicated by dose estimates to a maximally exposed member of the public, referred to as the maximally exposed individual (MEI). Reporting requirements associated with dose to members of the public from radiological air emissions are in 40 CFR Part 61.94, WAC 246-247-080, and DOE Order 458.1. The DOE Order and state standards for dose from radioactive air emissions are consistent with U.S. Environmental Protection Agency (EPA) dose standards in 40 CFR 61.92 (i.e., 10 mrem/yr to a MEI). Despite the fact that the current Contract Requirements Document (CRD) for the DOE-SC PNNL Site operations does not include the requirement to meet DOE CRD 458.1, paragraph 2.b, public dose limits, the DOE dose limits would be met when EPA limits are met.

  4. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen; Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphaël; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  5. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

    2010-01-15

    The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

  6. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  7. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  8. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  9. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  10. A hole modulator for InGaN/GaN light-emitting diodes Zi-Hui Zhang, Zabu Kyaw, Wei Liu, Yun Ji, Liancheng Wang, Swee Tiam Tan, Xiao Wei Sun, and Hilmi Volkan

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    well on optical power of light-emitting diodes Appl. Phys. Lett. 96, 051113 (2010); 10-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which

  11. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  12. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect (OSTI)

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  13. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.6–26.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  14. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect (OSTI)

    Young, N. G. Farrell, R. M.; Iza, M.; Speck, J. S.; Perl, E. E.; Keller, S.; Bowers, J. E.; Nakamura, S.; DenBaars, S. P.

    2014-04-21

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  15. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    SciTech Connect (OSTI)

    Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

    2014-08-25

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1??s, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  16. Clean Transportation Program | 919-513-7831 | www.cleantransportation.org North Carolina State University, Campus Box 7409, Raleigh, NC 27695 | 919-513-7831| www.cleantransportation.org| Aug_13

    E-Print Network [OSTI]

    Technology project with funding from the N.C. Department of Transportation. E85 (ETHANOL) RETAIL STATIONS of Administration Motor Fleet Management's E85 fueling site on Blue Ridge Road in Raleigh. State agencies, colleges. These groups can also purchase E10 and E85 in all 100 counties through the state purchasing contract (www

  17. Clean Transportation Program | 919-513-7831 | www.cleantransportation.org North Carolina State University, Campus Box 7409, Raleigh, NC 27695 | 919-513-7831| www.cleantransportation.org| Nov_13

    E-Print Network [OSTI]

    Technology project with funding from the N.C. Department of Transportation. E85 (ETHANOL) RETAIL STATIONS of Administration Motor Fleet Management's E85 fueling site on Blue Ridge Road in Raleigh. State agencies, colleges. These groups can also purchase E10 and E85 in all 100 counties through the state purchasing contract (www

  18. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda [University of Notre Dame, IN (United States); Song, Bo [Cornell University, Ithaca, NY (United States); Qi, Meng [University of Notre Dame, IN (United States); Hu, Zongyang [University of Notre Dame, IN (United States); Nomoto, Kazuki [University of Notre Dame, IN (United States); Yan, Xiaodong [University of Notre Dame, IN (United States); Cao, Yu [IQE, Westborough, MA (United States); Johnson, Wayne [IQE, Westborough, MA (United States); Kohn, Erhard [University of Notre Dame, IN (United States); Jena, Debdeep [Cornell University, Ithaca, NY (United States); Xing, Grace Huili [Cornell University, Ithaca, NY (United States)

    2015-04-01

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m?{center_dot}cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW{center_dot}cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  19. Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot

    SciTech Connect (OSTI)

    Deshpande, Saniya; Frost, Thomas; Hazari, Arnab; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109 (United States)

    2014-10-06

    We demonstrate a semiconductor quantum dot based electrically pumped single-photon source operating at room temperature. Single photons emitted in the red spectral range from single In{sub 0.4}Ga{sub 0.6}N/GaN quantum dots exhibit a second-order correlation value g{sup (2)}(0) of 0.29, and fast recombination lifetime ?1.3 ±0.3 ns at room temperature. The single-photon source can be driven at an excitation repetition rate of 200?MHz.

  20. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda; Song, Bo; Qi, Meng; Hu, Zongyang; Nomoto, Kazuki; Yan, Xiaodong; Cao, Yu; Johnson, Wayne; Kohn, Erhard; Jena, Debdeep; et al

    2015-02-16

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m? · cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.