Sample records for namibia sb st

  1. ST

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 -the Mid-Infrared0 ResourceAwards SAGE AwardsNA-00197-1USERS'Minutes |Shell ST

  2. Namibia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating Solar Powerstories onFocus AreaDataBus Jump to:NSTARNamibia-UNEP Green EconomyNamibia:

  3. CotancheSt. Johnston St.

    E-Print Network [OSTI]

    St. LibrarySt. LewisSt. MeadeSt. CotancheSt. EvansSt. Johnston St. Fifth St. ReadeSt. First St. Second St. Bldg. HARRIS BLDG. Tenth St. S S P P P Minges Coliseum Murphy Center RockSprings MCGINNIS M MESSICK

  4. MARSHALL ST. E. ADAMS ST.

    E-Print Network [OSTI]

    Raina, Ramesh

    MARSHALL ST. E. ADAMS ST. IRVINGAVE. WALNUTPL. HARRISON ST. HARRISON ST. E. ADAMS ST / E.S.F. Baker Illick Moon Library Bray Walters Marshall Jahn Lab Gateway Tolley Carrier Dome Maxwell

  5. MARSHALL ST. E. ADAMS ST.

    E-Print Network [OSTI]

    Mather, Patrick T.

    MARSHALL ST. E. ADAMS ST. IRVINGAVE. WALNUTPL. HARRISON ST. HARRISON ST. E. ADAMS ST Illick Moon Library Bray Walters Marshall Jahn Lab Tolley Carrier Dome Maxwell Physics Steele Hendricks H

  6. MARSHALL ST. E. ADAMS ST.

    E-Print Network [OSTI]

    Doyle, Robert

    MARSHALL ST. E. ADAMS ST. IRVINGAVE. WALNUTPL. HARRISON ST. HARRISON ST. E. ADAMS ST Bray Walters Marshall Jahn Lab Gateway Tolley Carrier Dome Maxwell Physics Steele Hendricks H.L. H

  7. MHK Projects/GPP Namibia | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 - 429Lacey,(MonasterLowell Point, Alaska:Luz IILynnM Setek8512GCKGPP Namibia <

  8. Impact of HIV/AIDS on the Agricultural Sector in Northern Namibia

    E-Print Network [OSTI]

    Carter, Charles Russell

    2011-02-22T23:59:59.000Z

    In agrarian societies, HIV/AIDS extends far beyond the realm of healthcare into agricultural production and food security as well. Namibia is a developing country with a large portion of its population involved in agriculture; the average HIV...

  9. Knowing and deciding: participation in conservation and development initiatives in Namibia and Argentina 

    E-Print Network [OSTI]

    Newsham, Andrew

    2007-01-01T23:59:59.000Z

    ’ in Namibia and the Alto Bermejo Project in Argentina. The concept of sustainability – of living in a way that meets both current and future needs – has led, on a global scale, to a re-casting of the relationship between conservation and development as one...

  10. Earth Planets Space, 52, 329336, 2000 Rock magnetism of sediments in the Angola-Namibia upwelling system

    E-Print Network [OSTI]

    Yamazaki, Toshitsugu

    Earth Planets Space, 52, 329­336, 2000 Rock magnetism of sediments in the Angola-Namibia upwelling system with special reference to loss of magnetization after core recovery Toshitsugu Yamazaki1 , Peter A Magnetism, University of Minnesota, Minneapolis, MN 55455-0128, U.S.A. 3Hawaii Institute of Geophysics

  11. STRATIGRAPHY OF THE PORT NOLLOTH GROUP OF NAMIBIA AND SOUTH AFRICA AND IMPLICATIONS FOR THE AGE OF

    E-Print Network [OSTI]

    Schrag, Daniel

    STRATIGRAPHY OF THE PORT NOLLOTH GROUP OF NAMIBIA AND SOUTH AFRICA AND IMPLICATIONS FOR THE AGE´S***, and DANIEL P. SCHRAG* ABSTRACT. Uncertainties in the number and age of glacial deposits within the Port architecture of the Port Nolloth Group. Particularly, we have distinguished an additional glacial deposit

  12. Transport properties in AlInSb/InAsSb heterostructures

    SciTech Connect (OSTI)

    Zhang, Yuwei; Zhang, Yang, E-mail: zhang-yang@semi.ac.cn; Wang, Chengyan; Zeng, Yiping [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2013-12-28T23:59:59.000Z

    Based on theoretical studies of transport properties in InAsSb-based quantum well heterostructures, we propose a material design for InAsSb quantum well with AlInSb barrier. Variation of electron mobility and two-dimensional electron gas concentration in Al{sub y}In{sub 1?y}Sb/InAs{sub 1?x}Sb{sub x} heterostructures over the compositional range of which InAsSb is fully strained to AlInSb are investigated, where impact from dislocation scattering could be minimized. In comparison with InAs and InSb based quantum well heterostructures, InAsSb is advantageous in achieving the highest electron mobility despite of alloy disorder scattering. The maximum mobility of 37?000 cm{sup 2}/V s is attainable in 15?nm InAs{sub 0.2}Sb{sub 0.8} quantum well with Al{sub 0.24}In{sub 0.76}Sb barrier and there is great potential for further improvement. Our InAsSb based quantum well heterostructure is proved to be a robust structure for high-speed applications.

  13. Electrochemical Insertion/extraction of Lithium in Multiwall Carbon Nanotube/Sb and SnSb?.? Nanocomposites

    E-Print Network [OSTI]

    Chen, Wei Xiang

    Multiwall carbon nanotubes (CNTs) were synthesized by catalytic chemical vapor deposition of acetylene and used as templates to prepare CNT-Sb and CNT-SnSb?.? nanocomposites via the chemical reduction of SnCl? and SbCl? ...

  14. NE Pacific St. NE Pacific St.

    E-Print Network [OSTI]

    Lake W ashington Ship Canal NE Pacific St. NE Pacific St. NE Boat St. 15th Ave NE 15thAveNE UniversityWayNE BrooklynAveNE NE Pacific St. MontlakeBlvdNE MontlakeBlvdNE Pacific Place NE University Burke-Gilman Trail METRO NW A CD D EF F GHI H J RR BB CC EE AA Rotunda Cafe Ocean Sciences Hitchcock

  15. Ohmic contacts to n-GaSb

    E-Print Network [OSTI]

    Yang, Zhengchong

    2012-06-07T23:59:59.000Z

    in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

  16. Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

    SciTech Connect (OSTI)

    Vajargah, S. Hosseini; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada) [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)] [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Preston, J. S.; Kleiman, R. N. [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada) [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

    2013-09-21T23:59:59.000Z

    The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates.

  17. Native point defects in GaSb

    SciTech Connect (OSTI)

    Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J. [Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 AALTO (Finland)

    2014-10-14T23:59:59.000Z

    We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

  18. St. Louis Sites Fact Sheet NORTH ST. LOUIS SITES

    E-Print Network [OSTI]

    US Army Corps of Engineers

    to the Lambert-St. Louis International Airport, which is now referred to as the St. Louis Airport Site (SLAPS

  19. CAMPUSDRIVEWEST VIAORTEGASANTA TERESA ST

    E-Print Network [OSTI]

    DOIN MA ST Lagunita JUNIPERO SERRA BLVD OLM STED PANAMAST PASTEUR DR OAK RD PAGEMILLRD PORTAGEAVE BIRCH

  20. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01T23:59:59.000Z

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  1. Biodiversity at St Anne's College

    E-Print Network [OSTI]

    Biodiversity at St Anne's College CAN I VISIT ST ANNE'S COLLEGE? Yes! St Anne's grounds, visit http://www.stannes.ox.ac.uk/about/findus HOW IS ST ANNE'S HELPING BIODIVERSITY? Helping wildlife

  2. DWPF simulant CPC studies for SB8

    SciTech Connect (OSTI)

    Koopman, D. C.; Zamecnik, J. R.

    2013-06-25T23:59:59.000Z

    The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing recommendations for DWPF along with some data related to Safety Class documentation at DWPF. Some significant observations regarding SB8 follow: Reduced washing in Tank 51 led to an increase in the wt.% soluble solids of the DWPF feed. If wt.% total solids for the SRAT and SME product weren’t adjusted upward to maintain insoluble solids levels similar to past sludge batches, then the rheological properties of the slurry went below the low end of the DWPF design bases for the SRAT and SME. Much higher levels of dissolved manganese were found in the SRAT and SME products than in recent sludge batches. Closed crucible melts were more reduced than expected. The working hypothesis is that the soluble Mn is less oxidizing than assumed in the REDOX calculations. A change in the coefficient for Mn in the REDOX equation was recommended in a separate report. The DWPF (Hsu) stoichiometric acid equation was examined in detail to better evaluate how to control acid in DWPF. The existing DWPF equation can likely be improved without changing the required sample analyses through a paper study using existing data. The recommended acid stoichiometry for initial SB8 SRAT batches is 115-120% stoichiometry until some processing experience is gained. The conservative range (based on feed properties) of stoichiometric factors derived in this study was from 110-147%, but SRNL recommends using only the lower half of this range, 110-126% even after initial batches provide processing experience. The stoichiometric range for sludge-only processing appears to be suitable for coupled operation based on results from the run in the middle of the range. Catalytic hydrogen was detectable (>0.005 vol%) in all SRAT and SME cycles. Hydrogen reached 30-35% of the SRAT and SME limits at the mid-point of the stoichiometry window (bounding noble metals and acid demand).

  3. SB 375 IMPLEMENTATION: FROM PLAN TO REALITY

    E-Print Network [OSTI]

    California at Davis, University of

    Development Cross-Agency Facilitation and Coordination Funding and Support for Sustainable Communities sustainable communities in a post-SB 375 world. · Urban Greening: $41.5 million in capital projects and plans Planning - Guidance documents - Metrics and indicators - Connecting dots across state agencies - Building

  4. Maintaining St. Augustinegrass Lawns

    E-Print Network [OSTI]

    Chalmers, David; McAfee, James; Havlak, Roger

    2006-08-08T23:59:59.000Z

    This publication explains how to keep a St. Augustinegrass lawn healthy and attractive, with tips on mowing; fertilizing; watering; controlling weeds, insects and thatch; and eliminating compacted soil....

  5. Thermoelectric properties of ZnSb films grown by MOCVD

    SciTech Connect (OSTI)

    Venkatasubramanian, R.; Watko, E.; Colpitts, T.

    1997-07-01T23:59:59.000Z

    The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.

  6. Recent progress in InGaAsSb/GaSb TPV devices

    SciTech Connect (OSTI)

    Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

    1996-05-01T23:59:59.000Z

    AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

  7. DWPF Simulant CPC Studies For SB8

    SciTech Connect (OSTI)

    Newell, J. D.

    2013-09-25T23:59:59.000Z

    Prior to processing a Sludge Batch (SB) in the Defense Waste Processing Facility (DWPF), flowsheet studies using simulants are performed. Typically, the flowsheet studies are conducted based on projected composition(s). The results from the flowsheet testing are used to 1) guide decisions during sludge batch preparation, 2) serve as a preliminary evaluation of potential processing issues, and 3) provide a basis to support the Shielded Cells qualification runs performed at the Savannah River National Laboratory (SRNL). SB8 was initially projected to be a combination of the Tank 40 heel (Sludge Batch 7b), Tank 13, Tank 12, and the Tank 51 heel. In order to accelerate preparation of SB8, the decision was made to delay the oxalate-rich material from Tank 12 to a future sludge batch. SB8 simulant studies without Tank 12 were reported in a separate report.1 The data presented in this report will be useful when processing future sludge batches containing Tank 12. The wash endpoint target for SB8 was set at a significantly higher sodium concentration to allow acceptable glass compositions at the targeted waste loading. Four non-coupled tests were conducted using simulant representing Tank 40 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry (146% acid) SRAT testing up to 31% of the DWPF hydrogen limit. SME hydrogen generation reached 48% of of the DWPF limit for the high acid run. Two non-coupled tests were conducted using simulant representing Tank 51 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry SRAT testing up to 16% of the DWPF limit. SME hydrogen generation reached 49% of the DWPF limit for hydrogen in the SME for the high acid run. Simulant processing was successful using previously established antifoam addition strategy. Foaming during formic acid addition was not observed in any of the runs. Nitrite was destroyed in all runs and no N2O was detected during SME processing. Mercury behavior was consistent with that seen in previous SRAT runs. Mercury was stripped below the DWPF limit on 0.8 wt% for all runs. Rheology yield stress fell within or below the design basis of 1-5 Pa. The low acid Tank 40 run (106% acid stoichiometry) had the highest yield stress at 3.78 Pa.

  8. St. Bernard Project Update

    Broader source: Energy.gov [DOE]

    The folks at St. Bernard Project are helping survivors of Hurricane Katrina get back into their homes -- and are using new technologies to reduce energy and save money for the returning residents.

  9. E-Print Network 3.0 - amorphous ge-sb-te films Sample Search...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    times in GeSbTe films irradiated... commercial phase-change optical recording systems, such as those based on GeSbTe Ref. 3 or AglnSbTe,4 use... the crystalline and...

  10. SB 4 Well Stimulation Treatment Regulations Text of Proposed Regulations

    E-Print Network [OSTI]

    surveys; routine activities that do not affect the integrity of the well or the formation; the removal SB 4 Well Stimulation Treatment Regulations Text of Proposed Regulations Page 1 of 13 SB 4 WELL STIMULATION TREATMENT REGULATIONS TEXT OF PROPOSED REGULATIONS Added text is shown in underline

  11. Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires

    SciTech Connect (OSTI)

    Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

    2014-10-14T23:59:59.000Z

    The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

  12. Effect of antimony nano-scale surface-structures on a GaSb/AlAsSb distributed Bragg reflector

    SciTech Connect (OSTI)

    Husaini, S.; Shima, D.; Ahirwar, P.; Rotter, T. J.; Hains, C. P.; Dang, T.; Bedford, R. G.; Balakrishnan, G. [Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Dayton, OH 45433 (United States)] [Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Dayton, OH 45433 (United States)

    2013-02-11T23:59:59.000Z

    Effects of antimony crystallization on the surface of GaSb during low temperature molecular beam epitaxy growth are investigated. The geometry of these structures is studied via transmission electron and atomic force microscopies, which show the surface metal forms triangular-shaped, elongated nano-wires with a structured orientation composed entirely of crystalline antimony. By depositing antimony on a GaSb/AlAsSb distributed Bragg reflector, the field is localized within the antimony layer. Polarization dependent transmission measurements are carried out on these nano-structures deposited on a GaSb/AlAsSb distributed Bragg reflector. It is shown that the antimony-based structures at the surface favor transmission of light polarized perpendicular to the wires.

  13. St. Thomas More College St. Thomas More College (STM)

    E-Print Network [OSTI]

    Saskatchewan, University of

    leaders that will, in turn, build a more just and sustainable society. For those who so desire, we offerSt. Thomas More College #12;St. Thomas More College (STM) You can take STM classes as part of your U of S degree program even if you are not an STM student. 2 | St. Thomas More College University

  14. Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

    SciTech Connect (OSTI)

    Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

    2014-10-21T23:59:59.000Z

    High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

  15. NCAI 71st Annual Convention

    Broader source: Energy.gov [DOE]

    Save the date for the National Congress of American Indians (NCAI) 71st Annual Convention at the Hyatt Regency Atlanta.

  16. Planning for sustainable communities: Regional incentives and local policy under SB375

    E-Print Network [OSTI]

    California at Davis, University of

    #12;SB 375: Sustainable Communities & Climate Protection Act (2008) isolation dispersion automobility

  17. Point defect balance in epitaxial GaSb

    SciTech Connect (OSTI)

    Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

    2014-08-25T23:59:59.000Z

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  18. Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy

    SciTech Connect (OSTI)

    Mikhailova, M. P.; Andreev, I. A., E-mail: igor@iropt9.ioffe.ru; Ivanov, E. V.; Konovalov, G. G.; Grebentshikova, E. A.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Hulicius, E.; Hospodkova, A.; Pangrac, Y. [Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)] [Academy of Sciences of the Czech Republic, Institute of Physics (Czech Republic)

    2013-08-15T23:59:59.000Z

    The luminescence and photoelectric properties of heterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates by metalorganic vapor-phase epitaxy are investigated. Intense superlinear luminescence and increased optical power as a function of the pump current in the photon energy range of 0.6-0.8 eV are observed at temperatures of T = 77 and 300 K. The photoelectric, current-voltage, and capacitance characteristics of these heterostructures are studied in detail. The photosensitivity is examined with photodetectors operating in the photovoltaic mode in the spectral range of 0.9-2.0 {mu}m. The sensitivity maximum at room temperature is observed at a wavelength of 1.55 {mu}m. The quantum efficiency, detectivity, and response time of the photodetectors were estimated. The quantum efficiency and detectivity at the peak of the photosensitivity spectrum are as high as {eta} = 0.6-0.7 and D{sub {lambda}max}{sup *} = (5-7) Multiplication-Sign 10{sup 10} cm Hz{sup 1/2} W{sup -1}, respectively. The photodiode response time determined as the rise time of the photoresponse pulse from 0.1 to the level 0.9 is 100-200 ps. The photodiode transmission bandwidth is 2-3 GHz. Photodetectors with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown on n-GaSb substrates are promising foruse in heterodyne detection systems and in information technologies.

  19. GaInAsSb/A1GaAsSb/Sb Thermophotovoltaic Devices With an Internal Back-Surface Reflector Formed by Wafer Bonding

    SciTech Connect (OSTI)

    C.A. Wang; R.K. Huang; D.A. Shiau; M.K. Connors; P.G. Murphy; P.W. O'brien; A.C. Anderson; D.M. DePoy; G. Nichols; M.N. Palmasiano

    2002-12-18T23:59:59.000Z

    A novel implementation for GAInAsSb/AlGaAsSb/GaSb TPV cells with an internal back-surface reflector (BSR) formed by wafer bonding to GaAs is demonstrated. The SiO{sub x}/Ti/Au internal BSR enhances optical absorption within the device, while the dielectric layer provides electrical isolation. This configuration has the potential to improve TPV device performance; is compatible with monolithic series-interconnection of TPV cells for building voltage; and can mitigate the requirements of filters used for front-surface spectral control. At a short-circuit density of 0.4 A/cm{sup 2}, the open-circuit voltage of a single TPV cell is 0.2 V, compared to 0.37 and 1.8 V for 2- and 10-junction series-interconnected TPV cells, respectively.

  20. The antimony-group 11 chemical bond: Dissociation energies of the diatomic molecules CuSb, AgSb, and AuSb

    SciTech Connect (OSTI)

    Carta, V.; Ciccioli, A., E-mail: guido.gigli@uniroma1.it, E-mail: andrea.ciccioli@uniroma1.it; Gigli, G., E-mail: guido.gigli@uniroma1.it, E-mail: andrea.ciccioli@uniroma1.it [Dipartimento di Chimica, Sapienza Universitŕ di Roma, p.le A. Moro 5, 00185 Roma (Italy)

    2014-02-14T23:59:59.000Z

    The intermetallic molecules CuSb, AgSb, and AuSb were identified in the effusive molecular beam produced at high temperature under equilibrium conditions in a double-cell-like Knudsen source. Several gaseous equilibria involving these species were studied by mass spectrometry as a function of temperature in the overall range 1349–1822 K, and the strength of the chemical bond formed between antimony and the group 11 metals was for the first time measured deriving the following thermochemical dissociation energies (D{sub 0}{sup ?}, kJ/mol): 186.7 ± 5.1 (CuSb), 156.3 ± 4.9 (AgSb), 241.3 ± 5.8 (AuSb). The three species were also investigated computationally at the coupled cluster level with single, double, and noniterative quasiperturbative triple excitations (CCSD(T)). The spectroscopic parameters were calculated from the potential energy curves and the dissociation energies were evaluated at the Complete Basis Set limit, resulting in an overall good agreement with experimental values. An approximate evaluation of the spin-orbit effect was also performed. CCSD(T) calculations were further extended to the corresponding group 11 arsenide species which are here studied for the first time and the following dissociation energies (D{sub 0}{sup ?}, kJ/mol): 190 ± 10 (CuAs), 151 ± 10 (AgAs), 240 ± 15 (AuAs) are proposed. Taking advantage of the new experimental and computational information here presented, the bond energy trends along group 11 and 4th and 5th periods of the periodic table were analyzed and the bond energies of the diatomic species CuBi and AuBi, yet experimentally unobserved, were predicted on an empirical basis.

  1. Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts

    SciTech Connect (OSTI)

    C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

    2003-07-10T23:59:59.000Z

    A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

  2. Vertical cavity surface emitting laser emitting at 1.56 microns with AlGaAsSb/AlAsSb distributed Bragg reflectors

    SciTech Connect (OSTI)

    Blum, O.; Klem, J.F.; Lear, K.L.; Vawter, G.A.; Kurtz, S.R.

    1998-07-01T23:59:59.000Z

    The authors report 77K operation of an optically pumped vertical cavity surface emitting laser with an Sb-based cavity. The structure consists of 15 and 20 pair AlGaAsSb/AlAsSb top and bottom reflectors and a bulk InGaAs active region.

  3. Florida Nuclear Profile - St Lucie

    U.S. Energy Information Administration (EIA) Indexed Site

    St Lucie" "Unit","Summer capacity (mw)","Net generation (thousand mwh)","Summer capacity factor (percent)","Type","Commercial operation date","License expiration date"...

  4. Student ID Advisor 1st Year Fall __________ (year) 1st Year Spr. __________ (year) 1st Year Sum. __________ (year)

    E-Print Network [OSTI]

    Barrash, Warren

    Name Major Student ID Advisor 1st Year Fall __________ (year) 1st Year Spr. __________ (year) 1st) Projected Graduation Date SUBJECT SUBJECT CR. HRS. SUBJECT COURSE # CR. HRS. Advisor Signature Date Student

  5. Interface effect of InSb quantum dots embedded in SiO{sub 2} matrix

    SciTech Connect (OSTI)

    Chen Dongliang; Fan Jiangwei; Wei Shiqiang [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China); Li Chaosheng; Zhu Zhengang [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, PO Box 1129, Hefei 230031 (China)

    2005-08-15T23:59:59.000Z

    The interface effect of InSb quantum dots (QDs) embedded in SiO{sub 2} matrix has been investigated by Raman scattering spectroscopy, x-ray diffraction (XRD), and x-ray absorption fine structure (both of EXAFS and XANES). The EXAFS and XRD results show clearly that the bond length of the Sb-In first shell of the InSb QDs contracts slightly about 0.02 A compared with that of the bulk InSb. The Raman scattering spectrum of the InSb QDs reveals that the lattice contraction partly weakens the phonon confinement effect. The coordination geometry at the interface of the InSb QDs is mainly Sb (In)-O covalent bridge bonds. The Sb K-XANES calculations of InSb QDs embedded in SiO{sub 2} matrix based on FEFF8 indicate that the intensity increase and the broadening of the white line peak of Sb atoms are essentially attributed to both the increase of Sb p-hole population and the change of Sb intra-atomic potential {mu}{sub 0}(E) affected by the SiO{sub 2} matrix. Our results show that the interface effect between the InSb QDs and the SiO{sub 2} matrix leads not only to the slight lattice contraction of InSb QDs and the large structural distortion in the interface area of InSb QDs, but also to the significant change of the Sb intra-atomic potential and the obvious charge redistribution around Sb atoms.

  6. SB Electronics Breaks Ground on New Factory | Department of Energy

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of EnergyEnergyENERGY TAXBalancedDepartmentRestrictions onSB Electronics Breaks Ground on New Factory SB

  7. Effect of Sb on the Properties of GaInP Top Cells (Presentation)

    SciTech Connect (OSTI)

    Olson, J. M.; McMahon, W. E.; Kurtz, S.

    2006-05-01T23:59:59.000Z

    The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

  8. St John Ambulance Australia Research Scholarships St John Ambulance Australia ("St John") is Australia's leading provider of first aid training,

    E-Print Network [OSTI]

    of first aid kits and equipment. St John runs the ambulance services in Western Australia and the NorthernSt John Ambulance Australia Research Scholarships St John Ambulance Australia ("St John") is Australia's leading provider of first aid training, first aid services at public events and supplier

  9. StORe Business Analysis 

    E-Print Network [OSTI]

    Miller, Ken

    2006-12-15T23:59:59.000Z

    The StORe project is multidisciplinary in scope, embracing the seven scientific domains of archaeology, astronomy, biochemistry, biosciences, chemistry, physics and the social sciences (originally described in the project ...

  10. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09T23:59:59.000Z

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  11. Influence of substituting Sn for Sb on the thermoelectric transport properties of CoSb{sub 3}-based skutterudites

    SciTech Connect (OSTI)

    Hui, Si [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Nielsen, Michele D. [Department of Mechanical and Aerospace Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Homer, Mark R.; Medlin, Douglas L. [Sandia National Laboratories, Livermore, California 94550 (United States); Tobola, Janusz [AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, 30-059 Krakow (Poland); Salvador, James R. [Chemical and Materials Systems Laboratory, GM R and D Center, Warren, Michigan 48090 (United States); Heremans, Joseph P. [Department of Mechanical and Aerospace Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Department of Physics, Ohio State University, Columbus, Ohio 43210 (United States); Pipe, Kevin P. [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-03-14T23:59:59.000Z

    Band structure calculations that incorporate impurity effects suggest that a band resonant state may be formed in p-type CoSb{sub 3}-based skutterudites by replacing Sb atoms with Sn dopant atoms. Such resonant states have the potential to greatly improve thermoelectric energy conversion efficiency by increasing the density of states variation near the Fermi level, thereby increasing the Seebeck coefficient at a given carrier concentration. Through transport measurements of the Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient, we show that a practical band resonant state is not achieved by Sn doping. Compared to undoped CoSb{sub 3}, the dimensionless figure of merit (ZT) in Sn-doped CoSb{sub 3} is enhanced slightly at high temperatures to a value of 0.2, mostly due to a reduction in thermal conductivity. The Fermi level is calculated not to reach the band resonant state induced by Sn impurity atoms within the range of Sn concentrations examined here.

  12. InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations

    E-Print Network [OSTI]

    Krishna, Sanjay

    InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energyAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations D February 2012) InAsSb/InAs type II strain balanced superlattices lattice matched to GaSb have recently been

  13. Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller

    E-Print Network [OSTI]

    McCluskey, Matthew

    Hydrogen passivation of Se and Te in AlSb M. D. McCluskey and E. E. Haller Lawrence Berkeley observed local vibrational modes LVM's arising from DX-hydrogen complex in AlSb. Hydrogen was diffused into bulk AlSb:Se and AlSb:Te by annealing in sealed quartz ampoules with either hydrogen gas or methanol CH

  14. GaSb substrates with extended IR wavelength for advanced space based applications

    SciTech Connect (OSTI)

    Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

    2009-05-01T23:59:59.000Z

    GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

  15. St. Louis FUSRAP Lessons Learned

    SciTech Connect (OSTI)

    Eberlin, J.; Williams, D.; Mueller, D.

    2003-02-26T23:59:59.000Z

    The purpose of this paper is to present lessons learned from fours years' experience conducting Remedial Investigation and Remedial Action activities at the St. Louis Downtown Site (SLDS) under the Formerly Utilized Sites Remedial Action Program (FUSRAP). Many FUSRAP sites are experiencing challenges conducting Remedial Actions within forecasted volume and budget estimates. The St. Louis FUSRAP lessons learned provide insight to options for cost effective remediation at FUSRAP sites. The lessons learned are focused on project planning (budget and schedule), investigation, design, and construction.

  16. InGaAsSb thermophotovoltaic diode physics evaluation

    SciTech Connect (OSTI)

    Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

    1998-06-01T23:59:59.000Z

    The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

  17. New Antimony Lanthanide Disulfide Dibromides LnSbS

    SciTech Connect (OSTI)

    Gout, D.; Jobic, S.; Evain, M.; Brec, R.

    2001-05-01T23:59:59.000Z

    CeSbS{sub 2}Br{sub 2} (I), Ce{sub 1/2}La{sub 1/2}SbS{sub 2}Br{sub 2} (II), and LaSbS{sub 2}Br{sub 2} (III) have been synthesized at 700 C from a mixture of LnBr{sub 3}, Ln{sub 2}S{sub 3}, Sb, and S and characterized by single-crystal X-ray diffraction. The three phases are isostructural (space group P2{sub 1}/c, Z=4) and crystallize in a novel, dense, bidimensional structure with cell parameters a=8.709(3) {angstrom}, b=9.187(2) {angstrom}, c=17.397(5) {angstrom} {beta}=104.26(3) for I, a=8.739(7) {angstrom}, b=9.219(7) {angstrom}, c=17.41(2) {angstrom}, =104.3(1) for II, and a=8.785(1) {angstrom}, b=9.236(2) {angstrom}, c=17.372(3) {angstrom}, {beta}=104.09(2) for III. In these compounds, [Ln S{sub 5}Br{sub 4}] and [Ln S{sub 3}Br{sub 6}] (Ln=Ce, La) distorted tricapped trigonal prisms define infinite {sub {infinity}}{sup 2}[LnS{sub 2}Br{sub 2}] layers counterbalanced and capped by antimony cations. In good accordance with the structural features, the charge balance in these materials is to be written Ln{sup III}Sb{sup III}S{sup -II}{sub 2}Br{sup -I}{sub 2}. These compounds exhibit a yellow hue with a measured absorption threshold of 2.42(1), 2.55(1), and 2.72(1) eV for I, II, and III, respectively. In the two cerium containing bromothioantimonates I and II, the origin of the color is assigned to a Ce-4f{yields}Ce-5d electronic transition, which shifts to higher energy from I to II due either to a matrix effect (increase of the mean Ln-S distances under the substitution of Ce for La) or to an atomic ordering between Ce and La cations on the Ln(1) and Ln(2) crystallographic sites. In contrast, the electronic transition at play in III involves a charge transfer from the bromine and sulfur ions to the antimony ions, the latter contributing substantially to the lowermost levels of the conduction band.

  18. ST. LOUIS AIRPORT/ HAZELWOOD INTERIM

    E-Print Network [OSTI]

    International Airport County: St. Louis County Other Names: Hazelwood Interim Storage & Vicinity, Latty Avenue radioactively-contaminated sites are part of the Formerly Utilized Sites Remedial Action Program (FUSRAP the Formerly Utilized Site Remedial Action Program (FUSRAP). Site information and updates #12;can be found

  19. Strain analysis of compositionally tailored interfaces in InAs/GaSb superlattices

    SciTech Connect (OSTI)

    Mahalingam, Krishnamurthy; Haugan, Heather J.; Brown, Gail J.; Aronow, Andrew J. [AFRL/RXAN, Materials and Manufacturing Directorate Air Force Research Laboratory, Wright Patterson AFB, Ohio 45433-7707 (United States)] [AFRL/RXAN, Materials and Manufacturing Directorate Air Force Research Laboratory, Wright Patterson AFB, Ohio 45433-7707 (United States)

    2013-11-18T23:59:59.000Z

    The effect of interface composition control on interfacial strain distribution in InAs/GaSb superlattices on (100)-GaSb substrates is investigated by atomic resolution scanning transmission electron microscopy. The interface composition was controlled by either depositing InSb at each interface or soaking the GaSb-on-InAs interface under Sb{sub 2} atmosphere. The strain profiles reveal a distinct difference in the extent to which the superlattice strain is balanced using the two methods. In particular, they indicate that the degree of strain balance achievable with soaking is inherently limited by the arsenic surface coverage during GaSb-on-InAs interface formation, emphasizing the influence of V/III flux ratio at this interface. The results also explain observed X-ray diffraction profiles.

  20. NORTH ST. LOUIS COUNTY SITES ANNUAL ENVIRONMENTAL

    E-Print Network [OSTI]

    US Army Corps of Engineers

    Airport Site and St. Louis Airport Site Vicinity Properties CY 2010 Remedial Actions.3.1 Latty Avenue Properties CY 2010 Remedial Actions...................................1-3 1.3.2 St. Louis

  1. NORTH ST. LOUIS COUNTY SITES ANNUAL ENVIRONMENTAL

    E-Print Network [OSTI]

    US Army Corps of Engineers

    Airport Site and St. Louis Airport Site Vicinity Properties CY 2012 Remedial Actions.3.1 Latty Avenue Properties CY 2012 Remedial Actions...................................1-3 1.3.2 St. Louis

  2. St. Louis Sites Fact Sheet RISK ASSESSMENT

    E-Print Network [OSTI]

    US Army Corps of Engineers

    -3905 or write to the St. Louis District, Corps of Engineers, FUSRAP Project Office, 8945 Latty Avenue, BerkeleySt. Louis Sites Fact Sheet RISK ASSESSMENT "Gateway to Excellence" U.S. Army Corps of Engineers St. Together, they help determine the most effective way to clean up a site while reducing the overall risk

  3. St. Louis Sites Fact Sheet RADIATION BASICS

    E-Print Network [OSTI]

    US Army Corps of Engineers

    of Engineers, FUSRAP Project Office, 8945 Latty Avenue, Berkeley, Missouri 63134 #12;Rad Basics - 081202St. Louis Sites Fact Sheet RADIATION BASICS "Gateway to Excellence" U.S. Army Corps of Engineers St), St. Louis District, is conducting a radiological cleanup program for four Missouri sites (SLDS, SLAPS

  4. Page 1 MATH 262 Quiz 1 Name.- Sb 0“ PID: Sokve the problem ...

    E-Print Network [OSTI]

    MATH 262 Quiz 1. Name.- Sb 0“ PID: Sokve the problem systematicaěly and neatly und show aěl your work. (4pts) l. Find the equation of the orthogonal ...

  5. Cu2Sb thin film electrodes prepared by pulsed laser deposition f or lithium batteries

    E-Print Network [OSTI]

    Song, Seung-Wan; Reade, Ronald P.; Cairns, Elton J.; Vaughey, Jack T.; Thackeray, Michael M.; Striebel, Kathryn A.

    2003-01-01T23:59:59.000Z

    Laser Deposition for Lithium Batteries Seung-Wan Song, a, *in rechargeable lithium batteries. Introduction Sb-in rechargeable lithium batteries. Two advantages of

  6. High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

    SciTech Connect (OSTI)

    Petukhov, A. A., E-mail: andrey-rus29@rambler.ru; Zhurtanov, B. E.; Kalinina, K. V.; Stoyanov, N. D.; Salikhov, H. M.; Mikhailova, M. P.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-09-15T23:59:59.000Z

    The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.

  7. Direct imaging of InSb (110)-(1x1) surface grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Mishima, T. D. [Homer L. Dodge Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman, Oklahoma 73019 (United States)

    2011-10-01T23:59:59.000Z

    High-resolution transmission electron microscopy under a profile imaging condition (HR-profile TEM) was employed to determine the structural model for the InSb(110)-(1x1) relaxation surface grown by molecular beam epitaxy (MBE). HR-profile TEM analyses indicate that the chevron model, which is widely accepted for zinc-blende-type III-V(110)-(1x1) surfaces prepared by cleavage, is also applicable to the InSb(110)-(1x1) surface prepared under an Sb-rich MBE condition. The assignment of atomic species (In or Sb) of InSb(110)-(1x1) surfaces was confirmed based on a HR-profile TEM image that captures the connected facets of InSb(110)-(1x1) and InSb(111)B-(2x2). On the basis of the well-known atomic species of InSb(111)B-(2x2), the atomic species of the InSb(110)-(1x1) surface were deduced straightforwardly: the atoms shifted upward and downward at the topmost layer of the InSb(110)-(1x1) surface are Sb and In, respectively. The atomic arrangements of the InSb(110)-(1x1)-InSb(111)B-(2x2) facet determined by HR-profile TEM may represent the atomic arrangements of zinc-blende-type III-V(331)B surfaces.

  8. Key results from SB8 simulant flowsheet studies

    SciTech Connect (OSTI)

    Koopman, D. C.

    2013-04-26T23:59:59.000Z

    Key technically reviewed results are presented here in support of the Defense Waste Processing Facility (DWPF) acceptance of Sludge Batch 8 (SB8). This report summarizes results from simulant flowsheet studies of the DWPF Chemical Process Cell (CPC). Results include: Hydrogen generation rate for the Sludge Receipt and Adjustment Tank (SRAT) and Slurry Mix Evaporator (SME) cycles of the CPC on a 6,000 gallon basis; Volume percent of nitrous oxide, N2O, produced during the SRAT cycle; Ammonium ion concentrations recovered from the SRAT and SME off-gas; and, Dried weight percent solids (insoluble, soluble, and total) measurements and density.

  9. Tank 40 Final SB7b Chemical Characterization Results

    SciTech Connect (OSTI)

    Bannochie, C. J.

    2012-11-06T23:59:59.000Z

    A sample of Sludge Batch 7b (SB7b) was taken from Tank 40 in order to obtain radionuclide inventory analyses necessary for compliance with the Waste Acceptance Product Specifications (WAPS). The SB7b WAPS sample was also analyzed for chemical composition including noble metals and fissile constituents. At the Savannah River National Laboratory (SRNL) the 3-L Tank 40 SB7b sample was transferred from the shipping container into a 4-L high density polyethylene bottle and solids were allowed to settle over the weekend. Supernate was then siphoned off and circulated through the shipping container to complete the transfer of the sample. Following thorough mixing of the 3-L sample, a 558 g sub-sample was removed. This sub-sample was then utilized for all subsequent analytical samples. Eight separate aliquots of the slurry were digested, four with HNO{sub 3}/HCl (aqua regia) in sealed Teflon? vessels and four with NaOH/Na{sub 2}O{sub 2} (alkali or peroxide fusion) using Zr crucibles. Two Analytical Reference Glass ? 1 (ARG-1) standards were digested along with a blank for each preparation. Each aqua regia digestion and blank was diluted to 1:100 mL with deionized water and submitted to Analytical Development (AD) for inductively coupled plasma ? atomic emission spectroscopy (ICP-AES) analysis, inductively coupled plasma ? mass spectrometry (ICP-MS) analysis, atomic absorption spectroscopy (AA) for As and Se, and cold vapor atomic absorption spectroscopy (CV-AA) for Hg. Equivalent dilutions of the alkali fusion digestions and blank were submitted to AD for ICP-AES analysis. Tank 40 SB7b supernate was collected from a mixed slurry sample in the SRNL Shielded Cells and submitted to AD for ICP-AES, ion chromatography (IC), total base/free OH{sup -}/other base, total inorganic carbon/total organic carbon (TIC/TOC) analyses, and Cs-137 gamma scan. Weighted dilutions of slurry were submitted for IC, TIC/TOC, and total base/free OH-/other base analyses. Activities for U-233, U-235, and Pu-239 were determined from the ICP-MS data for the aqua regia digestions of the Tank 40 WAPS slurry using the specific activity of each isotope. The Pu-241 value was determined from a Pu-238/-241 method.

  10. Ultralow noise midwave infrared InAsGaSb strain layer superlattice avalanche photodiode

    E-Print Network [OSTI]

    Krishna, Sanjay

    Ultralow noise midwave infrared InAs­GaSb strain layer superlattice avalanche photodiode InAs­GaSb strain layer superlattice p+ -n- -n homojunction avalanche photodiodes APDs grown by solid characteristics. © 2007 American Institute of Physics. DOI: 10.1063/1.2817608 Photodiodes operating in the eye

  11. Speciation of Sb in airborne particulate matter, vehicle brake linings, and brake pad wear residues

    E-Print Network [OSTI]

    Short, Daniel

    Speciation of Sb in airborne particulate matter, vehicle brake linings, and brake pad wear residues: XAS XANES EXAFS Antimony Particulate matter Brake linings a b s t r a c t Insights into the speciation of Sb in samples of brake linings, brake pad wear residues, road dust, and atmospheric particulate

  12. Describing Leaf Area Distribution in Loblolly Pine Trees with Johnson's SB Function

    E-Print Network [OSTI]

    Cao, Quang V.

    of leaf area of a wide variety of loblolly pine trees. FOR. SCI. 51(2):93­101. Key Words: ProbabilityDescribing Leaf Area Distribution in Loblolly Pine Trees with Johnson's SB Function Mauricio Jerez fractions of leaf area calculated with fitted SB functions matched measured values well; cumulative values

  13. Superconductivity in Strong Spin Orbital Coupling Compound Sb2Se3

    E-Print Network [OSTI]

    Shen, Guoyin

    Superconductivity in Strong Spin Orbital Coupling Compound Sb2Se3 P. P. Kong1 , F. Sun1,3 , L. Y induce Sb2Se3 into a topological nontrivial state. Here, we report on the discovery of superconductivity superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition

  14. ccsd00001219 Superconducting phase diagram of the lled skuterrudite PrOs 4 Sb 12

    E-Print Network [OSTI]

    ccsd­00001219 (version 2) : 16 Mar 2004 Superconducting phase diagram of the #12;lled skuterrudite a precise magnetic #12;eld-temperature superconducting phase diagram of PrOs4Sb12 down to 350 mK. We discuss the superconducting phase diagram of PrOs4Sb12 and its possible relation with an unconventional superconducting order

  15. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

    DOE Patents [OSTI]

    Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

    2014-11-11T23:59:59.000Z

    Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

  16. Illinois SB 1987: the Clean Coal Portfolio Standard Law

    SciTech Connect (OSTI)

    NONE

    2009-01-15T23:59:59.000Z

    On January 12, 2009, Governor Rod Blagojevich signed SB 1987, the Clean Coal Portfolio Standard Law. The legislation establishes emission standards for new coal-fueled power plants power plants that use coal as their primary feedstock. From 2009-2015, new coal-fueled power plants must capture and store 50 percent of the carbon emissions that the facility would otherwise emit; from 2016-2017, 70 percent must be captured and stored; and after 2017, 90 percent must be captured and stored. SB 1987 also establishes a goal of having 25 percent of electricity used in the state to come from cost-effective coal-fueled power plants that capture and store carbon emissions by 2025. Illinois is the first state to establish a goal for producing electricity from coal-fueled power plants with carbon capture and storage (CCS). To support the commercial development of CCS technology, the legislation guarantees purchase agreements for the first Illinois coal facility with CCS technology, the Taylorville Energy Center (TEC); Illinois utilities are required to purchase at least 5 percent of their electricity supply from the TEC, provided that customer rates experience only modest increases. The TEC is expected to be completed in 2014 with the ability to capture and store at least 50 percent of its carbon emissions.

  17. ST

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Coordinating Committee of Fusion Energy (U.S.-PRC Safety Monitoring Program) Meeting in China, December 9-14, 2009 Respectfully submitted on April 12, 2010 to: Barry Sullivan U.S....

  18. Discrete Applied Mathematics 121 (2002) 139153 NeST graphs

    E-Print Network [OSTI]

    Hayward, Ryan B.

    Discrete Applied Mathematics 121 (2002) 139­153 NeST graphs Ryan B. Haywarda; , Paul E. Kearneyb; received in revised form 14 March 2001; accepted 26 March 2001 Abstract We establish results on NeST graphs show the equivalence of proper NeST graphs and unit NeST graphs, the equivalence of ÿxed distance NeST

  19. DWPF SIMULANT CPC STUDIES FOR SB7B

    SciTech Connect (OSTI)

    Koopman, D.

    2011-11-01T23:59:59.000Z

    Lab-scale DWPF simulations of Sludge Batch 7b (SB7b) processing were performed. Testing was performed at the Savannah River National Laboratory - Aiken County Technology Laboratory (SRNL-ACTL). The primary goal of the simulations was to define a likely operating window for acid stoichiometry for the DWPF Sludge Receipt and Adjustment Tank (SRAT). In addition, the testing established conditions for the SRNL Shielded Cells qualification simulation of SB7b-Tank 40 blend, supported validation of the current glass redox model, and validated the coupled process flowsheet at the nominal acid stoichiometry. An acid window of 105-140% by the Koopman minimum acid (KMA) equation (107-142% DWPF Hsu equation) worked for the sludge-only flowsheet. Nitrite was present in the SRAT product for the 105% KMA run at 366 mg/kg, while SME cycle hydrogen reached 94% of the DWPF Slurry Mix Evaporator (SME) cycle limit in the 140% KMA run. The window was determined for sludge with added caustic (0.28M additional base, or roughly 12,000 gallons 50% NaOH to 820,000 gallons waste slurry). A suitable processing window appears to be 107-130% DWPF acid equation for sludge-only processing allowing some conservatism for the mapping of lab-scale simulant data to full-scale real waste processing including potentially non-conservative noble metal and mercury concentrations. This window should be usable with or without the addition of up to 7,000 gallons of caustic to the batch. The window could potentially be wider if caustic is not added to SB7b. It is recommended that DWPF begin processing SB7b at 115% stoichiometry using the current DWPF equation. The factor could be increased if necessary, but changes should be made with caution and in small increments. DWPF should not concentrate past 48 wt.% total solids in the SME cycle if moderate hydrogen generation is occurring simultaneously. The coupled flowsheet simulation made more hydrogen in the SRAT and SME cycles than the sludge-only run with the same acid stoichiometric factor. The slow acid addition in MCU seemed to alter the reactions that consumed the small excess acid present such that hydrogen generation was promoted relative to sludge-only processing. The coupled test reached higher wt.% total solids, and this likely contributed to the SME cycle hydrogen limit being exceeded at 110% KMA. It is clear from the trends in the SME processing GC data, however, that the frit slurry formic acid contributed to driving the hydrogen generation rate above the SME cycle limit. Hydrogen generation rates after the second frit addition generally exceeded those after the first frit addition. SRAT formate loss increased with increasing acid stoichiometry (15% to 35%). A substantial nitrate gain which was observed to have occurred after acid addition (and nitrite destruction) was reversed to a net nitrate loss in runs with higher acid stoichiometry (nitrate in SRAT product less than sum of sludge nitrate and added nitric acid). Increased ammonium ion formation was also indicated in the runs with nitrate loss. Oxalate loss on the order 20% was indicated in three of the four acid stoichiometry runs and in the coupled flowsheet run. The minimum acid stoichiometry run had no indicated loss. The losses were of the same order as the official analytical uncertainty of the oxalate concentration measurement, but were not randomly distributed about zero loss, so some actual loss was likely occurring. Based on the entire set of SB7b test data, it is recommended that DWPF avoid concentrating additional sludge solids in single SRAT batches to limit the concentrations of noble metals to SB7a processing levels (on a grams noble metal per SRAT batch basis). It is also recommended that DWPF drop the formic acid addition that accompanies the process frit 418 additions, since SME cycle data showed considerable catalytic activity for hydrogen generation from this additional acid (about 5% increase in stoichiometry occurred from the frit formic acid). Frit 418 also does not appear to need formic acid addition to prevent gel formation in

  20. Electronic and structural response of InSb to ultra-short and ultra-intense laser pulses

    E-Print Network [OSTI]

    Burzo, Andrea Mihaela

    2001-01-01T23:59:59.000Z

    intensity of Ac 2. 00 gauss. cm. lrn(&(l'1)) for lnSb for a field intensity of A&i ? 2. 23 gauss cm. Im(e(E)) for InSb for a field intensity of A&i -- 2. 40 gauss cm. hn(e(E)) for InSb for a field intensity of A&i 2. 82 gauss cm. Im(&(E)) for InSb for a...-correlation function for InSb for a field intcnsit, y of Ac ? 2. 00 gauss cin. 21 Tiiiic. cvoluti&m of thc pair-correlation function for lnSb for a field intensity of As = 2. 46 gauss cm. 44 Time evolution of the pair-correlation function for InSb for a field...

  1. Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes

    SciTech Connect (OSTI)

    Carrington, P. J.; Solov'ev, V. A.; Zhuang, Q.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom); Ivanov, S. V. [Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021 (Russian Federation)

    2008-09-01T23:59:59.000Z

    Self-assembled InSb submonolayer quantum dots (QDs) in an InAs matrix have been grown by molecular beam epitaxy using Sb{sub 2} and As{sub 2} fluxes. The structures exhibit bright midinfrared photoluminescence up to room temperature. Intense room temperature electroluminescence with a peak at wavelength near 3.8 {mu}m was observed from p-i-n light emitting diode structures containing ten InSb submonolayer QD sheets inserted within the InAs active region.

  2. Nano-porosity in GaSb induced by swift heavy ion irradiation

    SciTech Connect (OSTI)

    Kluth, P., E-mail: patrick.kluth@anu.edu.au; Schnohr, C. S.; Giulian, R.; Araujo, L. L.; Lei, W.; Rodriguez, M. D.; Afra, B.; Bierschenk, T.; Ridgway, M. C. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia); Sullivan, J.; Weed, R. [ARC Centre for Antimatter-Matter Studies, AMPL, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia); Li, W.; Ewing, R. C. [Department of Earth and Environmental Sciences, University of Michigan, Ann Arbor, Michigan 48109-1005 (United States)

    2014-01-13T23:59:59.000Z

    Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer formation is governed by the dominant electronic energy loss at this energy regime. The porous layer morphology differs significantly from that previously reported for low-energy, ion-irradiated GaSb. Prior to the onset of porosity, positron annihilation lifetime spectroscopy indicates the formation of small vacancy clusters in single ion impacts, while transmission electron microscopy reveals fragmentation of the GaSb into nanocrystallites embedded in an amorphous matrix. Following this fragmentation process, macroscopic porosity forms, presumably within the amorphous phase.

  3. Proceedings of the 1st Nordic Feed

    E-Print Network [OSTI]

    Proceedings of the 1st Nordic Feed Science Conference, Uppsala, Sweden Institutionen för husdjurens Department of Animal Nutrition and Management ISSN 0347-9838 ISRN SLU-HUV-R-274-SE #12;#12;Proceedings of the 1st Nordic Feed Science Conference 22 ­ 23 of June 2010 Uppsala Sweden Institutionen för husdjurens

  4. Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes

    SciTech Connect (OSTI)

    Imenkov, A. N.; Grebenshchikova, E. A., E-mail: eagr.iropt7@mail.ioffe.ru; Starostenko, D. A.; Sherstnev, V. V.; Konovalov, G. G.; Andreev, I. A.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-05-15T23:59:59.000Z

    InAs/InAs{sub 0.88}Sb{sub 0.12}/InAs{sub 0.50}Sb{sub 0.20}P{sub 0.30} heterostructure photodiodes operating at room temperature in the spectral range 1-4.8 {mu}m are developed. It is shown that the formation of a curvilinear reflecting surface constituted by a number of hemispheres on the rearside of the photodiode chip leads to an increase in the quantum sensitivity of the photodiodes by a factor of 1.5-1.7 at wavelengths in the range 2.2-4.8 {mu}m. At an exposed photodiode area of 0.9 mm{sup 2} and a p-n junction area of 0.15 mm{sup 2}, a zero-bias differential resistance of 30 {Omega} and a quantum sensitivity of 0.24 electron/photon at a wavelength of 3 {mu}m are obtained. The operation of a photodiode with re-reflection of the photon flux in the crystal due to reflection from the curvilinear surface of the rearside of the photodiode chip is theoretically analyzed. The possibility of effective conversion of the re-reflected flux of photons into a photocurrent, with a simultaneous decrease in the p-n junction area, is demonstrated. An increase in the quantum sensitivity in the short-wavelength spectral range 1-2.2 {mu}m by 35% relative to the calculated data is observed, which is probably due to impact ionization in the narrow-gap active region.

  5. Controlling SEI Formation on SnSb-Porous Carbon Nanofibers for...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for Improved Na Ion Storage. Abstract: Porous carbon nanofiber (CNF)-supported tin-antimony (SnSb) alloys is synthesized and applied as sodium ion battery anode. The...

  6. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

    2012-12-15T23:59:59.000Z

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  7. Structural and Magnetic Properties of Co-Mn-Sb Thin films

    SciTech Connect (OSTI)

    Meinert, M.; Schmalhorst, J.-M.; Ebke, D.; Liu, N. N.; Thomas, A.; Reiss, G.; Kanak, J.; Stobiecki, T.; Arenholz, E.

    2009-12-17T23:59:59.000Z

    Thin Co-Mn-Sb films of different compositions were investigated and utilized as electrodes in alumina based magnetic tunnel junctions with CoFe counterelectrode. The preparation conditions were optimized with respect to magnetic and structural properties. The Co-Mn-Sb/Al-O interface was analyzed by x-ray absorption spectroscopy and magnetic circular dichroism with particular focus on the element-specific magnetic moments. Co-Mn-Sb crystallizes in different complex cubic structures depending on its composition. The magnetic moments of Co and Mn are ferromagnetically coupled in all cases. A tunnel magnetoresistance ratio of up to 24% at 13 K was found and indicates that Co-Mn-Sb is not a ferromagnetic half-metal. These results are compared to recent works on the structure and predictions of the electronic properties.

  8. Nuclear Energy: Policies and Technology for the 21st Century...

    Broader source: Energy.gov (indexed) [DOE]

    Energy: Policies and Technology for the 21st Century Nuclear Energy: Policies and Technology for the 21st Century The Department of Energy (DOE) Nuclear Energy Advisory Committee...

  9. Laboratories for the 21st Century Best Practices: Energy Recovery...

    Broader source: Energy.gov (indexed) [DOE]

    Laboratories for the 21st Century Best Practices: Energy Recovery in Laboratory Facilities Laboratories for the 21st Century Best Practices: Energy Recovery in Laboratory...

  10. Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001)

    SciTech Connect (OSTI)

    Bermudez, V. M., E-mail: victor.bermudez@nrl.navy.mil [Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375 (United States)

    2014-04-07T23:59:59.000Z

    The formation of defects during the initial stages of native-oxide growth on the GaSb (001)-?(4?×?3) surface has been studied computationally using spin-unrestricted density functional theory. It is found that insertion into a Ga-Sb adatom dimer to form a peroxo Ga-O-O-Sb bridge is the most energetically favorable process with insertion into Ga-Sb back-bonds being somewhat less so. A Ga-O-O-Ga bridge between dimers is also favorable, but Sb-O-O-Sb bridges show little if any stability. In the course of analyzing molecular adsorption, a particularly reactive site has been identified that leads to O{sub 2} dissociation with little or no barrier. This process is initiated in the vicinity of an Sb-Sb dimer in the terminating layer and leads to sub-surface Ga and Sb defect sites (i.e., coordinatively unsaturated atoms) and to strained Ga-Sb bonds that may be susceptible to further O{sub 2} attack. However, the defects formed in these reactions do not produce states in the gap.

  11. 1st NIFS-CRC Int. Symp. and 1st Korea-Japan WS, 5/20-22, 2007

    E-Print Network [OSTI]

    Princeton Plasma Physics Laboratory

    1st NIFS-CRC Int. Symp. and 1st Korea-Japan WS, 5/20-22, 2007 1 Excitation of atomic hydrogen at metal surfaces promoted by proton motion Daiji Kato NIFS #12;1st NIFS-CRC Int. Symp. and 1st Korea of the excited state formation. · Conclusion #12;1st NIFS-CRC Int. Symp. and 1st Korea-Japan WS, 5/20-22, 2007 3

  12. GaAsSb-based heterojunction tunnel diodes for tandem solar cell interconnects

    SciTech Connect (OSTI)

    Zolper, J.C.; Klem, J.F.; Plut, T.A.; Tigges, C.P.

    1995-01-01T23:59:59.000Z

    We report a new approach to tunnel junctions that employs a pseudomorphic GaAsSb layer to obtain a band alignment at a InGaAs or InAlAs p-n junction favorable for forward bias tunneling. Since the majority of the band offset between GaAsSb and InGaAs or InAlAs is in the valence band, when an GaAsSb layer is placed at an InGaAs or InAlAs p-n junction the tunneling distance is reduced and the tunneling current is increased. For all doping levels studied, the presence of the GaAsSb-layer enhanced the forward tunneling characteristics. In fact, in a InGaAs/GaAsSb tunnel diode a peak tunneling current sufficient for a 1000 sun intercell interconnect was achieved with p = 1.5{times}l0{sup 18} cm{sup -3} while a similarly doped all-InGaAs diode was rectifying. This approach affords a new degree of freedom in designing tunnel junctions for tandem solar cell interconnects. Previously only doping levels could be varied to control the tunneling properties. Our approach relaxes the doping requirements by employing a GaAsSb-based heterojunction.

  13. Effect of lanthanide contraction on the mixed polyamine systems Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien): Syntheses and characterizations of lanthanide complexes with a tetraelenidoantimonate ligand

    SciTech Connect (OSTI)

    Zhao Jing; Liang Jingjing; Pan Yingli; Zhang Yong [Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Dushu Lake Campus, Soochow University, No. 199 Hengyi Road, Suzhou 215123 (China); Jia Dingxian, E-mail: jiadingxian@suda.edu.cn [Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Dushu Lake Campus, Soochow University, No. 199 Hengyi Road, Suzhou 215123 (China)

    2011-06-15T23:59:59.000Z

    Mixed polyamine systems Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien) (Ln=lanthanide, en=ethylenediamine, dien=diethylenetriamine, trien=triethylenetetramine) were investigated under solvothermal conditions, and novel mixed-coordinated lanthanide(III) complexes [Ln(en){sub 2}(dien)({eta}{sup 2}-SbSe{sub 4})] (Ln=Ce(1a), Nd(1b)), [Ln(en){sub 2}(dien)(SbSe{sub 4})] (Ln=Sm(2a), Gd(2b), Dy(2c)), [Ln(en)(trien)({mu}-{eta}{sup 1},{eta}{sup 2}-SbSe{sub 4})]{sub {infinity}} (Ln=Ce(3a), Nd(3b)) and [Sm(en)(trien)({eta}{sup 2}-SbSe{sub 4})] (4a) were prepared. Two structural types of lanthanide selenidoantimonates were obtained across the lanthanide series in both en+dien and en+trien systems. The tetrahedral anion [SbSe{sub 4}]{sup 3-} acts as a monodentate ligand mono-SbSe{sub 4}, a bidentate chelating ligand {eta}{sup 2}-SbSe{sub 4} or a tridentate bridging ligand {mu}-{eta}{sup 1},{eta}{sup 2}-SbSe{sub 4} to the lanthanide(III) center depending on the Ln{sup 3+} ions and the mixed ethylene polyamines, indicating the effect of lanthanide contraction on the structures of the lanthanide(III) selenidoantimonates. The lanthanide selenidoantimonates exhibit semiconducting properties with E{sub g} between 2.08 and 2.51 eV. - Graphical Abstract: Two structural types of lanthanide(III) selenidoantimonates are formed in both en-dien and en-trien mixed polyamines across lanthanide series, indicating the lanthanide contraction effect on the structures of the lanthanide(III) selenidoantimonates. Highlights: > Two structural types of lanthanide selenidoantimonates are prepared across the lanthanide series in both Ln/Sb/Se/(en+dien) and Ln/Sb/Se/(en+trien) systems. > The [SbSe{sub 4}]{sup 3-} anion acts as a mono-SbSe{sub 4}, a {eta}{sup 2}-SbSe{sub 4} or a {mu}-{eta}{sup 1},{eta}{sup 2}-SbSe{sub 4} ligand to the Ln{sup 3+} ions. > The soft base ligand [SbSe{sub 4}]{sup 3-} can be controlled to coordinate to the Ln{sup 3+} ions with en+dien and en+trien as co-ligands.

  14. PRELIMINARY FRIT DEVELOPMENT AND MELT RATE TESTING FOR SLUDGE BATCH 6 (SB6)

    SciTech Connect (OSTI)

    Fox, K.; Miller, D.; Edwards, T.

    2009-07-21T23:59:59.000Z

    The Liquid Waste Organization (LWO) provided the Savannah River National Laboratory (SRNL) with a Sludge Batch 6 (SB6) composition projection in March 2009. Based on this projection, frit development efforts were undertaken to gain insight into compositional effects on the predicted and measured properties of the glass waste form and to gain insight into frit components that may lead to improved melt rate for SB6-like compositions. A series of Sludge Batch 6 (SB6) based glasses was selected, fabricated and characterized in this study to better understand the ability of frit compositions to accommodate uncertainty in the projected SB6 composition. Acceptable glasses (compositions where the Product Composition Control System (PCCS) Measurement Acceptability Region (MAR) predicted acceptable properties, good chemical durability was measured, and no detrimental nepheline crystallization was observed) can be made using Frit 418 with SB6 over a range of Na{sub 2}O and Al{sub 2}O{sub 3} concentrations. However, the ability to accommodate variation in the sludge composition limits the ability to utilize alternative frits for potential improvements in melt rate. Frit 535, which may offer improvements in melt rate due to its increased B2O3 concentration, produced acceptable glasses with the baseline SB6 composition at waste loadings of 34 and 42%. However, the PCCS MAR results showed that it is not as robust as Frit 418 in accommodating variation in the sludge composition. Preliminary melt rate testing was completed in the Melt Rate Furnace (MRF) with four candidate frits for SB6. These four frits were selected to evaluate the impacts of B{sub 2}O{sub 3} and Na{sub 2}O concentrations in the frit relative to those of Frit 418, although they are not necessarily candidates for SB6 vitrification. Higher concentrations of B{sub 2}O{sub 3} in the frit relative to that of Frit 418 appeared to improve melt rate. However, when a higher concentration of B{sub 2}O{sub 3} was coupled with a lower concentration of Na{sub 2}O relative to Frit 418, melt rate did not appear to improve. It is expected that a SB6 composition projection with less uncertainty will be received during analysis of the Tank 51 E-1 sample, which will be pulled after the completion of aluminum dissolution in August 2009. At that time, additional frit development work will be performed to seek improved melt rates while maintaining viable projected operating windows. This later work will ultimately lead to a frit recommendation for SB6.

  15. Project StORe: Social Science report 

    E-Print Network [OSTI]

    Burton, Guy

    There was widespread support across the social science research community regarding the aims of the StORe Project Nearly half of social science respondents claimed that both source-to-output and out-put-to source repositories ...

  16. 140 St. George Street Toronto, Ontario

    E-Print Network [OSTI]

    Toronto, University of

    140 St. George Street Toronto, Ontario M5S 3G6 www.ischool.utoronto.ca BURSARY APPLICATION/COMMON LAW/FAMILY, ETC.? EXPLAIN: ARE YOU CURRENTLY EMPLOYED? YES NO NUMBER OF HOURS PER WEEK GROSS SALARY

  17. City of St. George- Net Metering

    Broader source: Energy.gov [DOE]

    The St. George City Council adopted a [http://www.sgcity.org/wp/power/NetMeteringPolicy.pdf net-metering program for area utilities], including interconnection procedures, in October 2005.* The...

  18. Laboratories for the 21st Century

    Broader source: Energy.gov [DOE]

    Laboratories for the 21st Century (Labs21) is a voluntary partnership program dedicated to improving the environmental performance of U.S. laboratories. The program is a joint initiative between...

  19. Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor phase epitaxy

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Oakley, D.C. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1998-06-01T23:59:59.000Z

    Studies on the materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for thermophotovoltaic (TPV) devices are reviewed. Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the n- and p-type dopants, respectively. The overall material quality of these alloys depends on growth temperature, In content, V/III ratio, substrate misorientation, and to a lesser extent, growth rate. A mirror-like surface morphology and room temperature photoluminescence (PL) are obtained for GaInAsSb layers with peak emission in the wavelength range between 2 and 2.5 {micro}m. The crystal quality improves for growth temperature decreasing from 575 to 525 C, and with decreasing In content, as based on epilayer surface morphology and low temperature PL spectra. A trend of smaller full width at half-maximum for low temperature PL spectra is observed as the growth rate is increased from 1.5 to 2.5 and 5 {micro}m/h. In general, GaInAsSb layers grown on (100) GaSb substrates with a 6{degree} toward (111)B misorientation exhibited overall better material quality than layers grown on the more standard substrate (100)2{degree} toward (110). Consistent growth of high performance lattice-matched GaInAsSb TPV devices is also demonstrated.

  20. OMVPE growth and characterization of GaInAsSb for thermophotovoltaics

    SciTech Connect (OSTI)

    Wang, C.A.; Charache, G.W.

    1998-06-01T23:59:59.000Z

    Studies on the materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for thermophotovoltaic (TPV) devices are reviewed. Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the n- and p-type dopants, respectively. The overall material quality of these alloys depends on growth temperature, In content, V/III ratio, substrate misorientation, and to a lesser extent, growth rate. A mirror-like surface morphology and room temperature photoluminescence (PL) are obtained for GaInAsSb layers with peak emission in the wavelength range between 2 and 2.5 {micro}m. The crystal quality improves for growth temperature decreasing from 575 to 525 C, and with decreasing In content, as based on epilayer surface morphology and low temperature PL spectra. A trend of smaller full width at half-maximum for low temperature PL spectra is observed as the growth rate is increased from 1.5 to 2.5 and 5 {micro}m/h. In general, GaInAsSb layers grown on (100) GaSb substrates with a 6{degree} toward (111)B misorientation exhibited overall better material quality than layers grown on the more standard substrate (100) 2{degree} toward (110). Consistent growth of high performance lattice-matched GaInAsSb TPV devices is also demonstrated.

  1. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect (OSTI)

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

    2013-08-19T23:59:59.000Z

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  2. GaSb based ternary and quaternary diffused junction devices for TPV applications

    SciTech Connect (OSTI)

    Sundaram, V.S.; Saban, S.B.; Morgan, M.D.; Horne, W.E.; Evans, B.D.; Ketterl, J.R. [EDTEK Inc. 7082 S. 220th Street Kent, Washington 98032 (United States); Morosini, M.B.; Patel, N.B. [Instituto de Fisica, UNICAMP, Campinas, Brasil (Brazil); Field, H. [NREL, Golden, Colorado (United States)

    1997-03-01T23:59:59.000Z

    In this work we report the characteristics of ternary, GaInSb (Eg=0.70eV) and quarternary, GaInAsSb (Eg=0.5eV) diffused junction photovoltaic devices. The unique feature of the quarternary device is the extended long-wavelength response to 2.1 microns enabling the efficient use of the blackbody-like thermal sources operating at 1373 K in thermophotovoltaic energy conversion systems. The ternary device was fabricated by diffusing zinc into a n-type (100) oriented GaInSb substrate. For the quarternary, a four micron thick Te doped GaInAsSb layer grown by LPE on a n-type GaSb(100) wafer was used as the starting substrate for zinc diffusion. The ternary device exhibits an open circuit voltage of 0.38 V, Fill Factor of 0.63 and a short circuit current of 0.8A/cm{sup 2}, while the corresponding values for the quarternary device are 0.25 V, 0.58 and 0.8A/cm{sup 2}, respectively. The peak internal quantum efficiency for the ternary is over 90{percent} and that of the quarternary is above 75{percent}. Process optimization should improve the performance charcateristics of the quarternary. {copyright} {ital 1997 American Institute of Physics.}

  3. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOE Patents [OSTI]

    Spahn, O.B.; Lear, K.L.

    1998-03-10T23:59:59.000Z

    The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

  4. Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy

    SciTech Connect (OSTI)

    Hosseini Vajargah, S.; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Preston, J. S.; Kleiman, R. N. [Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

    2012-11-01T23:59:59.000Z

    A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 - 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.

  5. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

    DOE Patents [OSTI]

    Spahn, Olga B. (Albuquerque, NM); Lear, Kevin L. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

  6. St Albans Boys High School Visit 12th ST ALBANS VISITS FABI

    E-Print Network [OSTI]

    St Albans Boys High School Visit 12th March 2009 ST ALBANS VISITS FABI Prepared by Kershney Naidoo Biotechnology (CTHB). Under her supervision and that of two of their school teachers, the very keen group metD, introduced discussions in her group by showing the boys samples of different fungi collected from ordinary

  7. (GeTe){sub n}SbInTe{sub 3} (n?3)—Element distribution and thermal behavior

    SciTech Connect (OSTI)

    Fahrnbauer, Felix; Urban, Philipp; Welzmiller, Simon [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany); Schröder, Thorsten; Rosenthal, Tobias [Department of Chemistry, Ludwig Maximilian University, Butenandtstraße 5-13, 81377 Munich (Germany); Oeckler, Oliver, E-mail: oliver.oeckler@gmx.de [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststraße 20, 04275 Leipzig (Germany); Department of Chemistry, Ludwig Maximilian University, Butenandtstraße 5-13, 81377 Munich (Germany)

    2013-12-15T23:59:59.000Z

    Antimony in germanium antimony tellurides (GeTe){sub n}(Sb{sub 2}Te{sub 3}) can be substituted by indium. Homogeneous bulk samples of GeSbInTe{sub 4} (R3-bar m, Z=3, a=4.21324(5) Ĺ, c=41.0348(10) Ĺ) and Ge{sub 2}SbInTe{sub 5} (P3-bar m1, Z=1, a=4.20204(6) Ĺ, c=17.2076(4) Ĺ) were obtained; their structures were refined with the Rietveld method. Single-crystal X-ray diffraction using synchrotron radiation at the K edges of Sb and Te (exploiting anomalous dispersion) yields precise information on the element distribution in the trigonal layered structure of Ge{sub 3}SbInTe{sub 6} (R3-bar m, Z=3, a=4.19789(4) Ĺ, c=62.1620(11) Ĺ). The structure is characterized by van der Waals gaps between distorted rocksalt-type slabs of alternating cation and anion layers. The cation concentration is commensurately modulated with Sb preferring the positions near the gaps. In contrast to unsubstituted Ge{sub 3}Sb{sub 2}Te{sub 6}, quenching the NaCl-type high-temperature phase (stable above ?510 °C) easily yields a pseudocubic modification that is metastable at ambient conditions. Temperature-dependent powder diffraction reveals a broader stability range of the cubic high-temperature modification of Ge{sub 3}SbInTe{sub 6} compared to the ternary phases. In-containing samples partially decompose at ca. 300 °C but become homogeneous again when the high-temperature phase is formed. - Graphical abstract: Crystal structure of 33R-Ge{sub 3}SbInTe{sub 6} as determined by resonant X-ray diffraction, one example of the (GeTe){sub n}SbInTe{sub 3} series of compounds investigated. - Highlights: • The new compounds 21R-GeSbInTe{sub 4}, 9P-Ge{sub 2}SbInTe{sub 5} and 33R-Ge{sub 3}SbInTe are described. • The element distribution in 33R-Ge{sub 3}SbInTe{sub 6} was determined by resonant scattering. • The cation concentration in the crystal structure is strongly modulated. • The Sb substitution by In has a significant impact on phase transitions. • Results may be relevant for thermoelectrics and thin-film phase-change materials.

  8. Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization

    SciTech Connect (OSTI)

    Cervera, C.; Rodriguez, J. B.; Perez, J. P.; Aiet-Kaci, H.; Chaghi, R.; Christol, P. [Institut d'Electronique du Sud (IES), UMR CNRS 5214, Case 067, Universite Montpellier 2, 34095 Montpellier Cedex 05 (France); Konczewicz, L.; Contreras, S. [Groupe d'Etude des Semiconducteurs (GES), UMR CNRS 5650, Case 074, Universite Montpellier 2, 34095 Montpellier Cedex 5 (France)

    2009-08-01T23:59:59.000Z

    In this communication we report on electrical properties of nonintentionally doped (nid) type II InAs/GaSb superlattice grown by molecular beam epitaxy. We present a simple technological process which, thanks to the suppression of substrate, allows direct Hall measurement on superlattice structures grown on conductive GaSb substrate. Two samples were used to characterize the transport: one grown on a semi-insulating GaAs substrate and another grown on n-GaSb substrate where a etch stop layer was inserted to remove the conductive substrate. Mobilities and carrier concentrations have been measured as a function of temperature (77-300 K), and compared with capacitance-voltage characteristic at 80 K of a photodiode comprising a similar nid superlattice.

  9. Electrical characteristics and thermal stability of HfO{sub 2} metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces

    SciTech Connect (OSTI)

    Miyata, Noriyuki, E-mail: nori.miyata@aist.go.jp; Mori, Takahiro; Yasuda, Tetsuji [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ohtake, Akihiro [National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Ichikawa, Masakazu [The University of Tokyo, Tokyo 113-8656 (Japan)

    2014-06-09T23:59:59.000Z

    HfO{sub 2}/GaSb interfaces fabricated by high-vacuum HfO{sub 2} deposition on clean reconstructed GaSb surfaces were examined to explore a thermally stable GaSb metal-oxide-semiconductor structure with low interface-state density (D{sub it}). Interface Sb-O bonds were electrically and thermally unstable, and post-metallization annealing at temperatures higher than 200?°C was required to stabilize the HfO{sub 2}/GaSb interfaces. However, the annealing led to large D{sub it} in the upper-half band gap. We propose that the decomposition products that are associated with elemental Sb atoms act as interface states, since a clear correlation between the D{sub it} and the Sb coverage on the initial GaSb surfaces was observed.

  10. Synthesis and Characterization of Ag-or Sb-Doped ZnO Nanorods by a Facile Hydrothermal Route

    E-Print Network [OSTI]

    Kik, Pieter

    Synthesis and Characterization of Ag- or Sb-Doped ZnO Nanorods by a Facile Hydrothermal Route Oleg Stefan Cel Mare BouleVard, MD-2004 Chisinau, Republic of MoldoVa, AdVanced Materials Processing ZnO nanorods doped with Ag and Sb have been synthesized by a facile hydrothermal technique. Crystal

  11. Evaluation Of Glass Density To Support The Estimation Of Fissile Mass Loadings From Iron Concentrations In SB8 Glasses

    SciTech Connect (OSTI)

    Edwards, T. B.; Peeler, D. K.; Kot, W. K.; Gan, H.; Pegg, I. L.

    2013-04-30T23:59:59.000Z

    The Department of Energy – Savannah River (DOE-SR) has provided direction to Savannah River Remediation (SRR) to maintain fissile concentration in glass below 897 g/m{sup 3}. In support of that guidance, the Savannah River National Laboratory (SRNL) provided a technical basis and a supporting Microsoft® Excel® spreadsheet for the evaluation of fissile loading in Sludge Batch 5 (SB5), Sludge Batch 6 (SB6), Sludge Batch 7a (SB7a), and Sludge Batch 7b (SB7b) glass based on the iron (Fe) concentration in glass as determined by the measurements from the Slurry Mix Evaporator (SME) acceptability analysis. SRR has since requested that the necessary density information be provided to allow SRR to update the Excel® spreadsheet so that it may be used to maintain fissile concentration in glass below 897 g/m{sup 3} during the processing of Sludge Batch 8 (SB8). One of the primary inputs into the fissile loading spreadsheet includes an upper bound for the density of SB8-based glasses. Thus, these bounding density values are to be used to assess the fissile concentration in this glass system. It should be noted that no changes are needed to the underlying structure of the Excel-based spreadsheet to support fissile assessments for SB8. However, SRR should update the other key inputs to the spreadsheet that are based on fissile and Fe concentrations reported from the SB8 Waste Acceptance Product Specification (WAPS) sample.

  12. Prospects of nanostructures Bi{sub 1-x}Sb{sub x} for thermoelectricity

    SciTech Connect (OSTI)

    Nikolaeva, Albina A., E-mail: A.Nikolaeva@nano.asm.md [Gitsu Institute of Electronic Engineering and Nanotechnologies, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova (Moldova, Republic of); International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw (Poland); Konopko, Leonid A. [Gitsu Institute of Electronic Engineering and Nanotechnologies, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova (Moldova, Republic of) [Gitsu Institute of Electronic Engineering and Nanotechnologies, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova (Moldova, Republic of); International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw (Poland); Huber, Tito E. [Department of Chemistry, Howard University, 500 College St. N.W., DC 20059, Washington (United States)] [Department of Chemistry, Howard University, 500 College St. N.W., DC 20059, Washington (United States); Bodiul, Pavel P.; Popov, Ivan A. [Gitsu Institute of Electronic Engineering and Nanotechnologies, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova (Moldova, Republic of)] [Gitsu Institute of Electronic Engineering and Nanotechnologies, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova (Moldova, Republic of)

    2012-09-15T23:59:59.000Z

    It has been predicted that surface states of topological insulators have large a thermopower and also ultrahigh mobilities. The authors report results of a magneto-thermoelectric investigation of single crystal Bi{sub 1-x}Sb{sub x} nanowires in a glass cover with diameters ranging from 90 nm to 5 {mu}m. The wide-ranging antimony concentration enabled us to study the effect of nanowire dimensionality in the semimetal, semi-conductor and gapless regimes. Quantum size effects in Bi-2 at%Sb nanowires, which are shown in temperature dependences of resistance R(T) and thermopower {alpha}(T) for the diameters significantly higher than the critical diameter for pure Bi-wires, are observed. The thermopower in weak magnetic fields, reaches values +400 {mu}V/K at T=20-40 K. Power factor {alpha}{sup 2}{sigma} depending on diameter of wires, structure, temperature and magnetic field is calculated. In connection with topological insulators, we will discuss the surface effect in the thermoelectric properties that we observe. - Graphical abstract: Temperature dependences of resistance R{sub T}/R{sub 300}(T) (a) for Bi-2 at%Sb wires various diameters d: 1-d=300 nm, 2-d=400 nm, 3-d=600 nm, 4-d=1600 nm. Inset (a) SEM cross sectional image of the 650 nm Bi-2 at%Sb wire (clear) in glass envelope (gray). The magnetic field dependences thermopower (H Double-Vertical-Line {Delta}T) (b) Bi-2 at%Sb wires, with different diameters: (1). d=300 nm, (2). d=400 nm, (3). d=600 nm, T=26 K. Highlights: Black-Right-Pointing-Pointer SMSC transition in semimetal Bi-Sb wires due to the quantum size effect is observed. Black-Right-Pointing-Pointer In Bi-6 at%Sb wires alloys has been realized the gapless (GL) state. Black-Right-Pointing-Pointer In the area GS state abnormal growth thermopower in magnetic fields is found out. Black-Right-Pointing-Pointer Semiconductor Bi{sub 1-x} Sb{sub x} nanowires manifest properties of the topological insulators.

  13. Development of Bi-Sb-Te ternary alloy with compositionally graded structure

    SciTech Connect (OSTI)

    Yamamoto, A.; Ohta, T.

    1997-07-01T23:59:59.000Z

    Compositionally graded p-type Bi-Sb-Te thermoelectric material was synthesized by PIES (Pulverized and Intermixed Elements Sintering) method. The materials consisted of three segmented regions of different alloy composition, i.e., y = 0.8/0.825/0.9 in (Bi{sub 2}Te{sub 3}){sub 1{minus}y} (Sb{sub 2}Te{sub 3}){sub y} system. It was found that the electrical power output of the compositionally graded material was larger than that of the best single composition material when the temperature difference was the designed value.

  14. Carrier lifetime reduction in 1.5 m AlGaAsSb saturable absorbers with air and AlAsSb barriers

    E-Print Network [OSTI]

    Keller, Ursula

    The SESAM structures consist of a 60-period InGaAsP/InP distributed Bragg reflector DBR and a 7-nm-thick Al exponential carrier decay time of 20 ps can be achieved. The studied AlGaAsSb absorbers were deposited on InGaAsP depth, the saturation fluence, the inverse absorption, the nonsaturable absorption, and the carrier de

  15. TiSnSb a new efficient negative electrode for Li-ion batteries: mechanism investigations by operando-XRD and Mossbauer techniques

    E-Print Network [OSTI]

    Boyer, Edmond

    TiSnSb a new efficient negative electrode for Li-ion batteries: mechanism investigations We report the electrochemical study of TiSnSb towards Li, as a negative electrode for Li-ion batteries. TiSnSb can reversibly take up more than 5 lithiums per formula unit leading to reversible

  16. October 1st Hamilton Convention Centre

    E-Print Network [OSTI]

    Hitchcock, Adam P.

    October 1st & 2nd , 2010 Hamilton Convention Centre 1 Summers Lane, Hamilton ON ANGELA SILLA, EventMaster University, Hamilton Brian Leber, MDCM, FRCPC Professor Division of Hematology & Thromboembolsim Department of Medicine McMaster University, Hamilton Peter Powers, MD, FRCPC Associate Professor Division of Hematology

  17. POLICY NAME 1ST READING BY

    E-Print Network [OSTI]

    Maxwell, Bruce D.

    POLICY NAME 1ST READING BY FACULTY SENATE APPROVED BY FACULTY SENATE POSTED FOR PUBLIC COMMENT APPROVED BY PRES or PROVOST ADOPTED FINAL POLICY DESTINATION Student Pregnancy Leave Pending Regents Professor (Version 1) 01/26/2011 04/27/2011 Regents Professor (Version 2) 04/12/2012 Revised Policy

  18. Graduate Assistant Orientation August 21st, 2012

    E-Print Network [OSTI]

    New Hampshire, University of

    , Dean of the Graduate School #12;THE UNH Mission The University of New Hampshire is the state's public-grant charters. #12;CoreValues of UNH Engagement Teaching, research, and public service that make a differenceGraduate Assistant Orientation August 21st, 2012 New Opportunities & New Challenges Harry Richards

  19. LAKE ST. CLAIR PHYSICAL AND HYDRAULIC CHARACTERISTICS'

    E-Print Network [OSTI]

    movements under various wind stresses from Ayers' (1964) physical model. 3. Lake St. Clair vertically averaged water movements under various wind stresses from the numerical model developed by Schwab et at month, with somewhat larger extremes (lower and higher) for shorter periods. Periodic long-term low

  20. REPORT from 1st Annual World Congress of BIOENERGY ,

    E-Print Network [OSTI]

    REPORT from 1st Annual World Congress of BIOENERGY , DALIAN, CHINA Dr. Efstratios Kalogirou Earth of SYNERGIA (WTERT Greece) participated in the successful 1st Annual World Congress of BIOENERGY, held between

  1. NCAI 71st Annual Convention | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    NCAI 71st Annual Convention NCAI 71st Annual Convention October 26, 2014 12:00PM EDT to October 31, 2014 9:00PM EDT Atlanta, Georgia http:www.ncai.orgconferences-events...

  2. Public Health Assessment Gopher State Ethanol, City of St. Paul

    E-Print Network [OSTI]

    Patzek, Tadeusz W.

    Public Health Assessment Gopher State Ethanol, City of St. Paul Ramsey County, Minnesota September with the Gopher State Ethanol, St. Paul, Ramsey County, Minnesota. It is based on a formal site evaluation....................................................................................................................... 3 Ethanol Production

  3. adolphus college st: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Timed CSP Gavin Lowe St Hugh's College A thesis submitted for the degree of Doctor the Science and Engineering Research Council of the United Kingdom and a scholarship from St....

  4. Superconductivity in Topological Insulator Sb2Te3 Induced by Pressure

    E-Print Network [OSTI]

    Wang, Wei Hua

    Superconductivity in Topological Insulator Sb2Te3 Induced by Pressure J. Zhu1 *, J. L. Zhang1 *, P superconductivity and topology nature. A s new states of quantum matter, topological insulators are characterized to topological insulators, topological superconductors are expected to have a full pairing gap in the bulk

  5. Defining Good Infill A Convening Report on SB 226 and the California

    E-Print Network [OSTI]

    Kammen, Daniel M.

    with the facilitation of the discussion and presented their draft regulations for feedback. This report provides a brief) and SB 375 (Steinberg), state planning priorities, water conservation and energy efficiency standards, the performance standards include requirements that residential and commercial projects meet or exceed specified

  6. Development of Nanostructures in Thermoelectric Pb-Te-Sb Alloys , L. A. Collins2

    E-Print Network [OSTI]

    in the figure of merit of thermoelectric materials. Fabrication of nanostructured thermoelectric materials via the discovery of materials with a high thermoelectric figure of merit, zT, defined as S2 T/, where immiscible thermoelectric materials: PbTe-Sb2Te3. This ternary system was selected for investigation because

  7. Grain refinement and texture development of cast bi90sb10 alloy via severe plastic deformation

    E-Print Network [OSTI]

    Im, Jae-taek

    2009-05-15T23:59:59.000Z

    The purpose of this work was to study learn about grain refinement mechanisms and texture development in cast n-type Bi90Sb10 alloy caused by severe plastic deformation. The practical objective is to produce a fine grained and textured...

  8. 0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

    2004-06-09T23:59:59.000Z

    Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures.

  9. Semimetallic antiferromagnetism in the half-Heusler compound CuMnSb Ruben Weht,2

    E-Print Network [OSTI]

    Pickett, Warren

    CuMnSb, the first antiferromagnet AFM in the Mn-based class of Heuslers and half-Heuslers that contains several conventional and half metallic ferromagnets, shows a peculiar stability of its magnetic order in high magnetic fields. Density functional based studies reveal an unusual nature of its unstable

  10. Engineering Sciences SB ESE Track Rev. July 2014 1/6

    E-Print Network [OSTI]

    Chou, James

    b or 21a) AM 101 ­ Statistical Inference for Scientists & Engineers ES 150 ­ Intro to Probability with Engineering Applications Statistics 110 ­ Introduction to Probability 1.0 _______ Applied Mathematics (1halfEngineering Sciences SB ­ ESE Track Rev. July 2014 1/6 Plan of Study for the Environmental Science

  11. Laboratories for the 21st Century Agency Resources

    Broader source: Energy.gov [DOE]

    Many helpful resources are available to Federal agencies about Laboratories for the 21st Century (Labs21).

  12. St. Louis Sites Fact Sheet WHAT IS FUSRAP?

    E-Print Network [OSTI]

    US Army Corps of Engineers

    to the St. Louis District, Corps of Engineers, FUSRAP Project Office, 8945 Latty Avenue, Berkeley, MissouriSt. Louis Sites Fact Sheet WHAT IS FUSRAP? "Gateway to Excellence" U.S. Army Corps of Engineers St. Louis District The Formerly Utilized Sites Remedial Action Program (FUSRAP) is an environmental

  13. St. Louis Sites Fact Sheet LONG-TERM STEWARDSHIP

    E-Print Network [OSTI]

    US Army Corps of Engineers

    to the St. Louis District, Corps of Engineers, FUSRAP Project Office, 8945 Latty Avenue, Berkeley, Missouri signs. The Long-term Stewardship Plan is being developed for the FUSRAP St. Louis Sites now to allowSt. Louis Sites Fact Sheet LONG-TERM STEWARDSHIP "Gateway to Excellence" U.S. Army Corps

  14. Baseline risk assessment for exposure to contaminants at the St. Louis Site, St. Louis, Missouri

    SciTech Connect (OSTI)

    Not Available

    1993-11-01T23:59:59.000Z

    The St. Louis Site comprises three noncontiguous areas in and near St. Louis, Missouri: the St. Louis Downtown Site (SLDS), the St. Louis Airport Storage Site (SLAPS), and the Latty Avenue Properties. The main site of the Latty Avenue Properties includes the Hazelwood Interim Storage Site (HISS) and the Futura Coatings property, which are located at 9200 Latty Avenue. Contamination at the St. Louis Site is the result of uranium processing and disposal activities that took place from the 1940s through the 1970s. Uranium processing took place at the SLDS from 1942 through 1957. From the 1940s through the 1960s, SLAPS was used as a storage area for residues from the manufacturing operations at SLDS. The materials stored at SLAPS were bought by Continental Mining and Milling Company of Chicago, Illinois, in 1966, and moved to the HISS/Futura Coatings property at 9200 Latty Avenue. Vicinity properties became contaminated as a result of transport and movement of the contaminated material among SLDS, SLAPS, and the 9200 Latty Avenue property. This contamination led to the SLAPS, HISS, and Futura Coatings properties being placed on the National Priorities List (NPL) of the US Environmental Protection Agency (EPA). The US Department of Energy (DOE) is responsible for cleanup activities at the St. Louis Site under its Formerly Utilized Sites Remedial Action Program (FUSRAP). The primary goal of FUSRAP is the elimination of potential hazards to human health and the environment at former Manhattan Engineer District/Atomic Energy Commission (MED/AEC) sites so that, to the extent possible, these properties can be released for use without restrictions. To determine and establish cleanup goals for the St. Louis Site, DOE is currently preparing a remedial investigation/feasibility study-environmental impact statement (RI/FS-EIS). This baseline risk assessment (BRA) is a component of the process; it addresses potential risk to human health and the environment associated wi

  15. Solar Policy Environment: Minneapolis/St. Paul

    Broader source: Energy.gov [DOE]

    The cities of Minneapolis and St. Paul joined forces to implement a comprehensive approach to promoting “Solar in the Cities” including commercial and residential solar installations, technical training programs, and city and state policy review. The Cities are marshalling a wide array of expertise through strategic partnerships with Xcel Energy, Minnesota Dept. of Commerce, Minnesota Renewable Energy Society, Green Institute, freEner-g, Int’l Brotherhood of Electrical Workers, League of Minnesota cities, Neighborhood Energy Connection, and Century College.

  16. Temperature-dependent structural property and power factor of n type thermoelectric Bi{sub 0.90}Sb{sub 0.10} and Bi{sub 0.86}Sb{sub 0.14} alloys

    SciTech Connect (OSTI)

    Malik, K.; Das, Diptasikha [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India)] [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India); Bandyopadhyay, S.; Banerjee, Aritra, E-mail: arbphy@caluniv.ac.in [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India) [Department of Physics, University of Calcutta, 92 A P C Road, Kolkata 700 009 (India); Center for Research in Nanoscience and Nanotechnology, University of Calcutta, JD-2, Sector-III, Saltlake City, Kolkata 700 098 (India); Mandal, P.; Srihari, Velaga [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India)] [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Deb, A. K. [Department of Physics, Raiganj College (University College), Uttar Dinajpur 733 134 (India)] [Department of Physics, Raiganj College (University College), Uttar Dinajpur 733 134 (India)

    2013-12-09T23:59:59.000Z

    Thermal variation of structural property, linear thermal expansion coefficient (?), resistivity (?), thermopower (S), and power factor (PF) of polycrystalline Bi{sub 1-x}Sb{sub x} (x?=?0.10 and 0.14) samples are reported. Temperature-dependent powder diffraction experiments indicate that samples do not undergo any structural phase transition. Rietveld refinement technique has been used to perform detailed structural analysis. Temperature dependence of ? is found to be stronger for Bi{sub 0.90}Sb{sub 0.10}. Also, PF for direct band gap Bi{sub 0.90}Sb{sub 0.10} is higher as compared to that for indirect band gap Bi{sub 0.86}Sb{sub 0.14}. Role of electron-electron and electron-phonon scattering on ?, S, and PF has been discussed.

  17. Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy

    SciTech Connect (OSTI)

    Vajargah, S. Hosseini; Couillard, M.; Cui, K. [Department of Material Science and Engineering, McMaster University, 1280 Main St. W., Hamilton, Ontario L8S 4M1 (Canada); Tavakoli, S. Ghanad; Robinson, B.; Kleiman, R. N.; Preston, J. S. [Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Botton, G. A. [Department of Material Science and Engineering, McMaster University, 1280 Main St. W., Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada)

    2011-02-21T23:59:59.000Z

    The interfacial misfit (IMF) dislocation array of an epitaxial GaSb film on a Si substrate has been imaged with high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The mismatch strain accommodation through dislocation formation has been investigated using geometric phase analysis (GPA) on HAADF-STEM images with atomic resolution to probe the defects' local strain distribution. These measurements indicate that the lattice parameter of the epitaxial film recovers its bulk value within three unit cells from the interface due to the relaxation through IMF dislocations. The atomic number contrast of the HAADF-STEM images and energy dispersive x-ray spectrometry illustrate the formation of islands of AlSb buffer layer along the interface. The role of the AlSb buffer layer in facilitating the GaSb film growth on Si is further elucidated by investigating the strain field of the islands with the GPA.

  18. Engineering evaluation/cost analysis for decontamination at the St. Louis Downtown Site, St. Louis, Missouri

    SciTech Connect (OSTI)

    Picel, M.H.; Hartmann, H.M.; Nimmagadda, M.R. (Argonne National Lab., IL (USA)); Williams, M.J. (Bechtel National, Inc., Oak Ridge, TN (USA))

    1991-05-01T23:59:59.000Z

    The US Department of Energy (DOE) is implementing a cleanup program for three groups of properties in the St. Louis, Missouri, area: the St. Louis Downtown Site (SLDS), the St. Louis Airport Site (SLAPS) and vicinity properties, and the Latty Avenue Properties, including the Hazelwood Interim Storage Site (HISS). The general location of these properties is shown in Figure 1; the properties are referred to collectively as the St. Louis Site. None of the properties are owned by DOE, but each property contains radioactive residues from federal uranium processing activities conducted at the SLDS during and after World War 2. The activities addressed in this environmental evaluation/cost analysis (EE/CA) report are being proposed as interim components of a comprehensive cleanup strategy for the St. Louis Site. As part of the Department's Formerly Utilized Sites Remedial Action Program (FUSRAP), DOE is proposing to conduct limited decontamination in support of proprietor-initiated activities at the SLDS, commonly referred to as the Mallinckrodt Chemical Works. The primary goal of FUSRAP activity at the SLDS is to eliminate potential environmental hazards associated with residual contamination resulting from the site's use for government-funded uranium processing activities. 17 refs., 3 figs., 5 tabs.

  19. Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study

    SciTech Connect (OSTI)

    Kim, Honggyu; Meng Yifei; Zuo Jianmin [Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801 (United States); Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States); Rouviere, Jean-Luc [CEA/INAC/SP2M/LEMMA, 19 rue des Martyrs, 38 054 Grenoble (France); Isheim, Dieter; Seidman, David N. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Northwestern University Center for Atom-Probe Tomography (NUCAPT), Northwestern University, Evanston, Illinois 60208 (United States)

    2013-03-14T23:59:59.000Z

    We combine quantitative analyses of Z-contrast images with composition analyses employing atom probe tomography (APT) correlatively to provide a quantitative measurement of atomic scale interfacial intermixing in an InAs/GaSb superlattice (SL). Contributions from GaSb and InAs in the Z-contrast images are separated using an improved image processing technique. Correlation with high resolution APT composition analyses permits an examination of interfacial segregation of both cations and anions and their incorporation in the short period InAs/GaSb SL. Results revealed short, intermediate, and long-range intermixing of In, Ga, and Sb during molecular beam epitaxial growth and their distribution in the SL.

  20. Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

    SciTech Connect (OSTI)

    Bremner, S. P. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia)] [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia); Ban, K.-Y.; Faleev, N. N.; Honsberg, C. B. [School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, Arizona 85287 (United States)] [School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, Arizona 85287 (United States); Smith, D. J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)] [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

    2013-09-14T23:59:59.000Z

    We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

  1. Nanostructured Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide films produced by laser electrodispersion

    SciTech Connect (OSTI)

    Yavsin, D. A., E-mail: yavsin@mail.ioffe.ru; Kozhevin, V. M.; Gurevich, S. A.; Yakovlev, S. A.; Melekh, B. T.; Yagovkina, M. A.; Pevtsov, A. B. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2014-12-15T23:59:59.000Z

    Amorphous nanostructured films of a complex chalcogenide (Ge{sub 2}Sb{sub 2}Te{sub 5}) are produced by laser electrodispersion and their structural and electrical properties are studied. It is found that the characteristic size of Ge{sub 2}Sb{sub 2}Te{sub 5} nanoparticles in the structure of the films is 1.5–5 nm.

  2. Synthesis and transport property of AgSbTe{sub 2} as a promising thermoelectric compound

    SciTech Connect (OSTI)

    Wang Heng; Li Jingfeng; Zou Minmin; Sui Tao [State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2008-11-17T23:59:59.000Z

    Polycrystalline AgSbTe{sub 2} ternary compound materials with high phase purity were fabricated using a combined process of mechanical alloying and spark plasma sintering. It was found that stoichiometric AgSbTe{sub 2} is a promising composition for low-and-mediate temperature applications, whose ZT reaches 1.59 at 673 K, benefiting from its extremely low thermal conductivity (0.30 W/mK) in addition to its low electrical resistivity (<1.1x10{sup -4} {omega} m) and large positive Seebeck coefficient (260 {mu}V/K). On the other hand, deviating from this formula would lead to unstable phase structures and higher thermal conductivity, which make the samples less attractive as thermoelectric materials or components of thermoelectric systems.

  3. Height stabilization of GaSb/GaAs quantum dots by Al-rich capping

    SciTech Connect (OSTI)

    Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-09-01T23:59:59.000Z

    GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

  4. Abundance analysis of SB2 binary stars with HgMn primaries

    E-Print Network [OSTI]

    T. Ryabchikova

    1998-05-06T23:59:59.000Z

    We present a short review of the abundances in the atmospheres of SB2 systems with Mercury-Manganese (HgMn) primaries. Up to now a careful study has been made for both components of 8 out of 17 known SB2 binaries with orbital periods shorter than 100 days and mass ratio ranging from 1.08 to 2.2. For all eight systems we observe a lower Mn abundance in the secondary's atmospheres than in the primary's. Significant difference in the abundances is also found for some peculiar elements such as Ga, Xe, Pt. All secondary stars with effective temperatures less than 10000 K show abundance characteristics typical of the metallic-line stars.

  5. Optical nonlinear absorption characteristics of Sb{sub 2}Se{sub 3} nanoparticles

    SciTech Connect (OSTI)

    Muralikrishna, Molli, E-mail: muralikrishnamolli@sssihl.edu.in; Kiran, Aditha Sai, E-mail: muralikrishnamolli@sssihl.edu.in; Ravikanth, B., E-mail: muralikrishnamolli@sssihl.edu.in; Sowmendran, P., E-mail: muralikrishnamolli@sssihl.edu.in; Muthukumar, V. Sai, E-mail: muralikrishnamolli@sssihl.edu.in; Venkataramaniah, Kamisetti, E-mail: muralikrishnamolli@sssihl.edu.in [Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthinilayam-515 134 (India)

    2014-04-24T23:59:59.000Z

    In this work, we report for the first time, the nonlinear optical absorption properties of antimony selenide (Sb{sub 2}Se{sub 3}) nanoparticles synthesized through solvothermal route. X-ray diffraction results revealed the crystalline nature of the nanoparticles. Electron microscopy studies revealed that the nanoparticles are in the range of 10 - 40 nm. Elemental analysis was performed using EDAX. By employing open aperture z-scan technique, we have evaluated the effective two-photon absorption coefficient of Sb{sub 2}Se{sub 3} nanoparticles to be 5e-10 m/W at 532 nm. These nanoparticles exhibit strong intensity dependent nonlinear optical absorption and hence could be considered to have optical power limiting applications in the visible range.

  6. REVUE DE PHYSIQUE APPLIQUE PHASE DIAGRAM CALCULATION IN THE Te-Bi-Sb TERNARY SYSTEM

    E-Print Network [OSTI]

    Boyer, Edmond

    by the stoichio- metric compounds Bi2Te3-Sb2Te3 and SnTe-PbTe [16, 17] exhibit complete miscibility in both liquid 1976) Résumé. 2014 On calcule le diagramme de l'équilibre liquide-solide dans le système ternaire Te be achieved either by means of time- and labor-consuming measurements which permit plotting the equilibrium

  7. Raman Spectroscopy Determination of Hole Concentration in p-Type GaSb

    SciTech Connect (OSTI)

    Maslar JE, Hurst WS, Wang CA

    2007-04-05T23:59:59.000Z

    Room temperature p-type GaSb bulk coupled mode spectra were measured as a function of hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode scattering than possible with visible wavelength excitation-based systems. A relatively simple spectral model for the electronic contribution to the dielectric function was evaluated for determination of hole concentration from the bulk coupled mode spectra. Optically-derived values for hole concentration were determined by minimizing the sum of the residuals squared between an experimental and simulated spectrum as a function of total hole concentration and a plasmon damping parameter. Hole concentrations obtained from the Raman spectroscopic measurements deviated from the values determined from single field Hall effect measurements that were corrected to account for two band conduction by {approx}20% to {approx}65%. These deviations were attributed to the limitations of the spectral model employed and uncertainties in GaSb materials properties.

  8. Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    SciTech Connect (OSTI)

    Lu, Q.; Zhuang, Q.; Hayton, J.; Yin, M.; Krier, A. [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-07-21T23:59:59.000Z

    There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1??m have been demonstrated and characterized. The gain was determined to be 2.9?cm{sup ?1} per QD layer, and the waveguide loss was ?15?cm{sup ?1} at 4?K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T{sub 0}?=?101?K below 50?K, but decreased to 48?K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs{sub 0.61}Sb{sub 0.13}P{sub 0.26} lower cladding layer and an upper n{sup +} InAs plasmon cladding layer which resulted in a maximum operating temperature (T{sub max}) of 120?K in pulsed mode, which is the highest reported to date.

  9. St. Mary's Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revisionEnvReviewNonInvasiveExplorationUT-g GrantAtlas (PACA RegionSpringview IISt. Mary's Wind Farm Facility St.

  10. 1994 SSRL 21st USERS MEETING

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLasDelivered‰PNGExperience hands-on halloweenReliable7O(α, X) (Current as SSRL 21st USERS

  11. Clean Cities: St. Louis Clean Cities coalition

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New SubstationClean Communities of Western NewSouth Shore CleanSt. Louis Clean Cities

  12. ST Development Path The ST is a cost effective element of

    E-Print Network [OSTI]

    configuration for maintenance - Once center column removed - similar to IFE · Low technology TF magnet · Natural application to CTF mission. UKEA ST Power Plant Maintenance Concept Research goal: Reduction of recirculating reliability through compactness and design simplicity ­ Broadens BP operational database to widen parameter

  13. RHEOLOGICAL AND ELEMENTAL ANALYSES OF SIMULANT SB5 SLURRY MIX EVAPORATOR-MELTER FEED TANK SLURRIES

    SciTech Connect (OSTI)

    Fernandez, A.

    2010-02-08T23:59:59.000Z

    The Defense Waste Processing Facility (DWPF) will complete Sludge Batch 5 (SB5) processing in fiscal year 2010. DWPF has experienced multiple feed stoppages for the SB5 Melter Feed Tank (MFT) due to clogs. Melter throughput is decreased not only due to the feed stoppage, but also because dilution of the feed by addition of prime water (about 60 gallons), which is required to restart the MFT pump. SB5 conditions are different from previous batches in one respect: pH of the Slurry Mix Evaporator (SME) product (9 for SB5 vs. 7 for SB4). Since a higher pH could cause gel formation, due in part to greater leaching from the glass frit into the supernate, SRNL studies were undertaken to check this hypothesis. The clogging issue is addressed by this simulant work, requested via a technical task request from DWPF. The experiments were conducted at Aiken County Technology Laboratory (ACTL) wherein a non-radioactive simulant consisting of SB5 Sludge Receipt and Adjustment Tank (SRAT) product simulant and frit was subjected to a 30 hour SME cycle at two different pH levels, 7.5 and 10; the boiling was completed over a period of six days. Rheology and supernate elemental composition measurements were conducted. The caustic run exhibited foaming once, after 30 minutes of boiling. It was expected that caustic boiling would exhibit a greater leaching rate, which could cause formation of sodium aluminosilicate and would allow gel formation to increase the thickness of the simulant. Xray Diffraction (XRD) measurements of the simulant did not detect crystalline sodium aluminosilicate, a possible gel formation species. Instead, it was observed that caustic conditions, but not necessarily boiling time, induced greater thickness, but lowered the leach rate. Leaching consists of the formation of metal hydroxides from the oxides, formation of boric acid from the boron oxide, and dissolution of SiO{sub 2}, the major frit component. It is likely that the observed precipitation of Mg(OH){sub 2} and Mn(OH){sub 2} caused the increase in yield stress. The low pH run exhibited as much as an order of magnitude greater B and Li (frit components) leachate concentrations in the supernate. At high pH a decrease of B leaching was found and this was attributed to adsorption onto Mg(OH){sub 2}. A second leaching experiment was performed without any sludge to deconvolute the leach rate behavior of Frit 418 from those of the SB5 sludge-Frit 418 system. At high pH, the sludgeless system demonstrated very fast leaching of all the frit components, primarily due to fast dissolution of the main component, silica, by hydroxide anion; various semiconductor studies have established this reactivity. Overall, the frit-water system exhibited greater leaching from a factor two to almost three orders of magnitude (varying by conditions and species). The slower leaching of the sludge system is possibly due to a greater ionic strength or smaller driving force. Another possible reason is a physical effect, coating of the frit particles with sludge; this would increase the mass transfer resistance to leaching. Based on this study, the cause of clogs in the melter feed loop is still unknown. A possible explanation is that the SME product, like the simulant, is too thin and could contribute to a loss of two-phase flow which could cause plugging of a restricted and poorly mixed zone like the melter feed loop. This is feasible since a previous study of a slurry showed an increase in resistance to flow at lower flow rates. Testing with a radioactive SME sample is underway and should help understand this potential mechanism.

  14. ,"Sault St Marie, MI Natural Gas Pipeline Exports to Canada ...

    U.S. Energy Information Administration (EIA) Indexed Site

    Sault St Marie, MI Natural Gas Pipeline Exports to Canada (Million Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of...

  15. atomenergi norway 21st: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CENTURY Engineering Websites Summary: reinforcement. This problem is more serious in cold climate countries, where de-icing salts accelerate of these materials for the 21st...

  16. address 21st century: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CENTURY Engineering Websites Summary: reinforcement. This problem is more serious in cold climate countries, where de-icing salts accelerate of these materials for the 21st...

  17. 15-Minute Scheduling Begins October 21st - October 16, 2014

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CommitteesTeams Customer Training Interconnection Notices Rates Standards of Conduct Tariff TF Web Based Training Notice: 15-Minute Scheduling Begins October 21st Posted Date:...

  18. St. Kitts and Nevis-Caribbean Community (CARICOM) Sustainable...

    Open Energy Info (EERE)

    Jump to: navigation, search Name St. Kitts and Nevis-Caribbean Community (CARICOM) Sustainable Energy Roadmap and Strategy AgencyCompany Organization Inter-American...

  19. Tackling a Key 21st Century Evaluation Challenge | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    2nd International Conference will tackle the difficulties linked to the evaluation of climate change and development, described by many as a major 21st century evaluation...

  20. The Mathematics Education into the 21st Century Project

    E-Print Network [OSTI]

    Spagnolo, Filippo

    The Mathematics Education into the 21st Century Project Proceedings ooff tthhee. Students are good rule followers but unfortunately do not always understand the procedures they learned

  1. 21st Century Truck Partnership Roadmap Roadmap and Technical...

    Broader source: Energy.gov (indexed) [DOE]

    Roadmap Roadmap and Technical White Papers - 21CTP-0003, December 2006 21st Century Truck Partnership Roadmap Roadmap and Technical White Papers - 21CTP-0003, December 2006 Report...

  2. 21st Century Truck Partnership - Roadmap and Technical White...

    Broader source: Energy.gov (indexed) [DOE]

    - Roadmap and Technical White Papers Appendix of Supporting Information - 21CTP-0003, December 2006 21st Century Truck Partnership - Roadmap and Technical White Papers Appendix of...

  3. Job Creation and Energy Savings in St. Paul, Minnesota | Department...

    Broader source: Energy.gov (indexed) [DOE]

    photovoltaic installation at the RiverCentre convention complex is unveiled in the heart of downtown St. Paul. | Photo courtesy of the Office of Energy Efficiency and...

  4. SELF HELPS ST. LUCIE RESIDENTS BEAT THE FLORIDA HEAT | Department...

    Energy Savers [EERE]

    summer heat waves can send Floridians' utility bills soaring. St. Lucie County in the heart of Florida's Treasure Coast committed to helping homeowners reduce their rising...

  5. Laboratories for the 21st Century Best Practices Guides

    Broader source: Energy.gov [DOE]

    Laboratories for the 21st Century best practices guides outline the design, construction, and operation of specific technologies that contribute to energy efficiency and sustainability. The guides...

  6. Laboratories for the 21st Century Case Studies

    Broader source: Energy.gov [DOE]

    These case studies feature examples of energy-efficient laboratories for the 21st century. The Featured Concepts Table outlines technologies covered in each case study.

  7. Federal laboratories for the 21st century

    SciTech Connect (OSTI)

    Gover, J. [Sandia National Labs., Albuquerque, NM (United States); Huray, P.G. [Univ. of South Carolina, Columbia, SC (United States)

    1998-04-01T23:59:59.000Z

    Federal laboratories have successfully filled many roles for the public; however, as the 21st Century nears it is time to rethink and reevaluate how Federal laboratories can better support the public and identify new roles for this class of publicly-owned institutions. The productivity of the Federal laboratory system can be increased by making use of public outcome metrics, by benchmarking laboratories, by deploying innovative new governance models, by partnerships of Federal laboratories with universities and companies, and by accelerating the transition of federal laboratories and the agencies that own them into learning organizations. The authors must learn how government-owned laboratories in other countries serve their public. Taiwan`s government laboratory, Industrial Technology Research Institute, has been particularly successful in promoting economic growth. It is time to stop operating Federal laboratories as monopoly institutions; therefore, competition between Federal laboratories must be promoted. Additionally, Federal laboratories capable of addressing emerging 21st century public problems must be identified and given the challenge of serving the public in innovative new ways. Increased investment in case studies of particular programs at Federal laboratories and research on the public utility of a system of Federal laboratories could lead to increased productivity of laboratories. Elimination of risk-averse Federal laboratory and agency bureaucracies would also have dramatic impact on the productivity of the Federal laboratory system. Appropriately used, the US Federal laboratory system offers the US an innovative advantage over other nations.

  8. Spectroscopy of particle-phonon coupled states in 133Sb by the cluster transfer reaction of 132Sn on 7Li: an advanced test of nuclear interactions

    E-Print Network [OSTI]

    Leoni S, University of Milano and INFN Milano (Italy); Bocchi G, University of Milano and INFN Milano (Italy); Bottoni S, University of Milano and INFN Milano (Italy); Bracco A, University of Milano and INFN Milano (Italy); Camera F, University of Milano and INFN Milano (Italy; Crespi F, University of Milano and INFN Milano (Italy); Morales A, University of Milano and INFN Milano (Italy); Fornal B, IFJ-PAN Krakow (Poland); Szpak B, IFJ-PAN Krakow (Poland); Bednarczyk P, IFJ-PAN Krakow (Poland); Cieplicka N, IFJ-PAN Krakow (Poland); Krolas W, IFJ-PAN Krakow ( Poland); Maj A, IFJ-PAN Krakow (Poland); Rusek K, Heavy Ion Laboratory University of Warsaw (Poland); Bazzacco D, INFN Padova (Italy); Lunardi S, University of Padova and INFN Padova (Italy); Mengoni D, University of Padova and INFN Padova (Italy); Recchia F, University of Padova and INFN Padova (Italy); Ur C, INFN Padova (Italy); Valiente-Dobon J, LNL-INFN (Italy); Gramegna F, LNL-INFN (Italy); Marchi T, LNL-INFN (Italy); Huyse M, KU Leuven (Belgium); Raabe R, KU Leuven (Belgium); VanDuppen P, KU Leuven (Belgium); Sferrazza M, Université libre de Bruxelles (Belgium); Georgiev G, CSNSM Orsay (France); Blazhev A, Institut fur Kernphysik der Universitat zu Köln (Germany); Rosiak D, Institut fur Kernphysik der Universitat zu Köln (Germany); Siebeck B, Institut fur Kernphysik der Universitat zu Köln (Germany); Seidlitz M, Institut fur Kernphysik der Universitat zu Köln (Germany); Reiter P, Institut fur Kernphysik der Universitat zu Köln (Germany); Warr N, Institut fur Kernphysik der Universitat zu Koln (Germany); Hartig AL, TU Darmstadt (Germany); Henrich C, TU Darmstadt (Germany); Ilieva S, TU Darmstadt (Germany); Kroell T, TU Darmstadt (Germany); Thurauf M, TU Darmstadt (Germany); Gernhaeuser R, TU Munchen (Germany); Mucher D, TU Munchen (Germany); Janssens R, Argonne National Laboratory (USA); Carpenter MP, Argonne National Laboratory (USA); Zhu S, Argonne National Laboratory (USA); Kowalska M, ISOLDE-CERN (Switzerland); CERN. Geneva. ISOLDE and neutron Time-of-Flight Experiments Committee; INTC

    2014-01-01T23:59:59.000Z

    Spectroscopy of particle-phonon coupled states in 133Sb by the cluster transfer reaction of 132Sn on 7Li: an advanced test of nuclear interactions

  9. Thermal conductivity of Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} solid solutions

    SciTech Connect (OSTI)

    Caillat, T.; Borshchevsky, A.; Fleurial, J.P.

    1997-07-01T23:59:59.000Z

    {beta}-Zn{sub 4}Sb{sub 3} was recently identified at the Jet Propulsion Laboratory as a new high performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further improve ZT values is to alloy {beta}-Zn{sub 4}Sb{sub 3} with isostructural compounds because of the expected decrease in lattice thermal conductivity. The authors have grown Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} crystals with 0.2 {le} x < 1.2 and measured their thermal conductivity from 10 to 500K. The thermal conductivity values of Zn{sub 4{minus}x}Cd{sub x}Sb{sub 3} alloys are significantly lower than those measured for {beta}-Zn{sub 4}Sb{sub 3} and are comparable to its calculated minimum thermal conductivity. A strong atomic disorder is believed to be primarily at the origin of the very low thermal conductivity of these materials which are also fairly good electrical conductors and are therefore excellent candidates for thermoelectric applications.

  10. Unusual magnetic hysteresis and the weakened transition behavior induced by Sn substitution in Mn{sub 3}SbN

    SciTech Connect (OSTI)

    Sun, Ying, E-mail: sunying@buaa.edu.cn [Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191 (China); International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Guo, Yanfeng; Li, Jun; Wang, Xia [Superconducting Properties Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Tsujimoto, Yoshihiro [Materials Processing Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Wang, Cong [Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191 (China); Feng, Hai L.; Sathish, Clastin I.; Yamaura, Kazunari, E-mail: yamaura.kazunari@nims.go.jp [Superconducting Properties Unit, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044 (Japan); Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Matsushita, Yoshitaka [Analysis Station, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-01-28T23:59:59.000Z

    Substitution of Sb with Sn was achieved in ferrimagnetic antiperovskite Mn{sub 3}SbN. The experimental results indicate that with an increase in Sn concentration, the magnetization continuously decreases and the crystal structure of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N changes from tetragonal to cubic phase at around x of 0.8. In the doping series, step-like anomaly in the isothermal magnetization was found and this behavior was highlighted at x?=?0.4. The anomaly could be attributed to the magnetic frustration, resulting from competition between the multiple spin configurations in the antiperovskite lattice. Meantime, H{sub c} of 18 kOe was observed at x?=?0.3, which is probably the highest among those of manganese antiperovskite materials reported so far. With increasing Sn content, the abrupt change of resistivity and the sharp peak of heat capacity in Mn{sub 3}SbN were gradually weakened. The crystal structure refinements indicate the weakened change at the magnetic transition is close related to the change of c/a ratio variation from tetragonal to cubic with Sn content. The results derived from this study indicate that the behavior of Mn{sub 3}Sb{sub 1-x}Sn{sub x}N could potentially enhance its scientific and technical applications, such as spin torque transfer and hard magnets.

  11. AN ECONOMIC EVALUATION OF THE ST. LAWRENCE RIVER-EASTERN

    E-Print Network [OSTI]

    AN ECONOMIC EVALUATION OF THE ST. LAWRENCE RIVER-EASTERN LAKE ONTARIO BASS FISHERY The St. Lawrence information on the economic importance of the bass fishery, considered by many to be one of the best smallmouth bass fisheries in the world. The economic value of this recreational fishery should be taken

  12. Summary of Activities at the ST. LOUIS DOWNTOWN SITE

    E-Print Network [OSTI]

    US Army Corps of Engineers

    , USACE FUSRAP Project Office 8945 Latty Avenue Berkeley, Missouri 63134 And St. Louis Public Library 1301/CentersofExpertise/ FormerlyUtilizedSitesRemedialAc- tionProgram.aspx Or write St. Louis District, USACE FUSRAP Project Office 8945 Latty Avenue Berkeley, Missouri 63134 Background From 1942 to 1957, the Mallinckrodt Chemical

  13. St. Louis Sites Fact Sheet "Gateway to Excellence"

    E-Print Network [OSTI]

    US Army Corps of Engineers

    District, Corps of Engineers, FUSRAP Project Office, 8945 Latty Avenue, Berkeley, Missouri 63134 #12;theSt. Louis Sites Fact Sheet ARARs "Gateway to Excellence" U.S. Army Corps of Engineers St. Louis presented by the contaminants at the site, unless a waiver is granted. Put another way, an ARAR is

  14. St. Louis Sites Fact Sheet "Gateway to Excellence"

    E-Print Network [OSTI]

    US Army Corps of Engineers

    of Engineers, FUSRAP Project Office, 8945 Latty Avenue, Berkeley, Missouri 63134 #12;The actual removal of the St. Louis FUSRAP Sites under CERCLA. Let's look at each of these in turn. SAMPLING (PRESt. Louis Sites Fact Sheet CLEANUP "Gateway to Excellence" U.S. Army Corps of Engineers St. Louis

  15. St. Louis Sites Fact Sheet "Gateway to Excellence"

    E-Print Network [OSTI]

    US Army Corps of Engineers

    District, Corps of Engineers, FUSRAP Project Office, 8945 Latty Avenue, Berkeley, Missouri 63134 #12St. Louis Sites Fact Sheet RELEASE "Gateway to Excellence" U.S. Army Corps of Engineers St. Louis for four Missouri sites (SLDS, SLAPS, SLAPS VPs, HISS). These sites contain soils contaminated with radium

  16. BACHELOR OF St. F.X. Bachelor of Education Handbook

    E-Print Network [OSTI]

    BACHELOR OF EDUCATION HANDBOOK 2014-15 #12;St. F.X. Bachelor of Education Handbook Updated August 2014 2014-15 1 TABLE OF CONTENTS I. WELCOME TO THE ST. FRANCIS XAVIER UNIVERSITY BACHELOR OF EDUCATION ........................................2 B. School of Education Contacts....................2 II. FACULTY AND STAFF

  17. Magnetic susceptibility of curium pnictides. [/sup 248/CmP, /sup 248/CmSb

    SciTech Connect (OSTI)

    Nave, S.E.; Huray, P.G.; Peterson, J.R.; Damien, D.A.; Haire, R.G.

    1981-09-01T23:59:59.000Z

    The magnetic susceptibility of microgram quantities of /sup 248/CmP and /sup 248/CmSb has been determined with the use of a SQUID micromagnetic susceptometer over the temperature range 4.2 to 340 K and in the applied magnetic field range of 0.45 to 1600 G. The fcc (NaCl-type) samples yield magnetic transitions at 73K and 162 K for the phosphide and antimonide, respectively. Together with published magnetic data for CmN and CmAs, these results indicate spatially extended exchange interactions between the relatively localized 5f electrons of the metallic actinide atoms.

  18. Unique nanostructures and enhanced thermoelectric performance of melt-spun BiSbTe alloys

    SciTech Connect (OSTI)

    Xie Wenjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States); Tang Xinfeng; Yan Yonggao; Zhang Qingjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Tritt, Terry M. [Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States)

    2009-03-09T23:59:59.000Z

    We report a melt spinning technique followed by a quick spark plasma sintering procedure to fabricate high-performance p-type Bi{sub 0.52}Sb{sub 1.48}Te{sub 3} bulk material with unique microstructures. The microstructures consist of nanocrystalline domains embedded in amorphous matrix and 5-15 nm nanocrystals with coherent grain boundary. The significantly reduced thermal conductivity leads to a state-of-the-art dimensionless figure of merit ZT{approx}1.56 at 300 K, more than 50% improvement of that of the commercial Bi{sub 2}Te{sub 3} ingot materials.

  19. Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors

    DOE Patents [OSTI]

    Biefeld, Robert M. (Albuquerque, NM); Dawson, L. Ralph (Albuquerque, NM); Fritz, Ian J. (Albuquerque, NM); Kurtz, Steven R. (Albuquerque, NM); Zipperian, Thomas E. (Albuquerque, NM)

    1991-01-01T23:59:59.000Z

    A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.

  20. Roadmap and Technical White Papers for 21st Century Truck Partnership...

    Broader source: Energy.gov (indexed) [DOE]

    Roadmap and Technical White Papers for 21st Century Truck Partnership Roadmap and Technical White Papers for 21st Century Truck Partnership Roadmap document for 21st Century Truck...

  1. EECBG Success Story: Job Creation and Energy Savings in St. Paul...

    Broader source: Energy.gov (indexed) [DOE]

    Job Creation and Energy Savings in St. Paul, Minnesota EECBG Success Story: Job Creation and Energy Savings in St. Paul, Minnesota April 11, 2011 - 3:47pm Addthis St. Paul Mayor...

  2. St. Louis Airport site environmental report for calendar year 1989, St. Louis, Missouri

    SciTech Connect (OSTI)

    Not Available

    1990-05-01T23:59:59.000Z

    The environmental monitoring program, which began in 1984, continued during 1989 at the St. Louis Airport Site (SLAPS) in St. Louis County, Missouri. SLAPS and its vicinity properties, including ditches north and south of the site, were designated for cleanup as part of the Formerly Utilized Sites Remedial Action Program (FUSRAP), a United States Department of Energy (DOE) program to identify and decontaminate or otherwise control sites where residual radioactive material remains from the early years of the nation's atomic energy program. The monitoring program at SLAPS measures radon concentrations in air; external gamma dose rates; and uranium, thorium, and radium concentrations in surface water, groundwater, and sediment. Additionally, several nonradiological parameters are measured in groundwater. To assess the potential effect of SLAPS on public health, the potential radiation dose was estimated for a hypothetical maximally exposed individual. This report presents the findings of the environmental monitoring program conducted at the St. Louis Airport Site (SLAPS) during calendar year 1989. 19 refs., 13 figs., 14 tabs.

  3. Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices

    SciTech Connect (OSTI)

    Steenbergen, E. H., E-mail: Elizabeth.Steenbergen.1@us.af.mil; Mitchel, W. C.; Mou, Shin; Brown, G. J. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433 (United States)] [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433 (United States); Elhamri, S. [Department of Physics, University of Dayton, Dayton, Ohio 45469 (United States)] [Department of Physics, University of Dayton, Dayton, Ohio 45469 (United States)

    2014-01-06T23:59:59.000Z

    The InAs/InAsSb type-II superlattice materials studied to date for infrared detector applications have been residually n-type, but p-type absorber regions with minority carrier electrons can result in increased photodiode quantum efficiency, R{sub o}A, and detectivity. Therefore, Be-doped InAs/InAsSb superlattices were investigated to determine the p-type InAs/InAsSb superlattice material transport properties essential to developing high quality photodiode absorber materials. Hall measurements performed at 10?K revealed that the superlattice converted to p-type with Be-doping of 3 × 10{sup 16} cm{sup ?3} and the hole mobility reached 24 400 cm{sup 2}/Vs. Photoresponse measurements at 10?K confirmed the 175?meV bandgap and material optical quality.

  4. Growth of an {alpha}-Sn film on an InSb(111) A-(2x2) surface

    SciTech Connect (OSTI)

    Kondo, Daiyu; Sakamoto, Kazuyuki; Shima, Masahide; Takeyama, Wakaba [Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578 (Japan); Nakamura, Kenya; Ono, Kanta; Oshima, Masaharu [Department of Applied Chemistry, Graduate School of Engineering, University of Tokyo, Tokyo 113-0033 (Japan); Kasukabe, Yoshitaka [Department of Electronic Engineering/International Student Center, Tohoku University, Sendai 980-8578 (Japan)

    2004-12-15T23:59:59.000Z

    We have investigated the initial growth process of {alpha}-Sn films on the In-terminated InSb(111)A-(2x2) surface using low-energy electron diffraction (LEED) and high-resolution core-level photoelectron spectroscopy. Taking the LEED observation and the Sn coverage-dependent integrated intensities of the In 4d, Sb 4d, and Sn 4d core-level spectra into account, we conclude that the {alpha}-Sn film grows epitaxially by a bilayer mode and that there is no interdiffusion of the substrate atoms as suggested in the literature. Furthermore, the coverage-dependent In 4d and Sn 4d core levels indicate that the In vacancy site of InSb(111)A-(2x2) surface is not the preferable Sn absorption site.

  5. DOE/BES Workshop on Clean and Efficient Combustion of 21st Century...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    DOEBES Workshop on Clean and Efficient Combustion of 21st Century Transportation Fuels DOEBES Workshop on Clean and Efficient Combustion of 21st Century Transportation Fuels...

  6. E-Print Network 3.0 - acute st segment Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4 Early Detection of Myocardial Ischemia Using Transient ST-Segment Episode Analysis of ECG Summary: Early Detection of Myocardial Ischemia Using Transient ST-Segment Episode...

  7. Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional theory study

    E-Print Network [OSTI]

    Khare, Sanjay V.

    Diffusion of Te vacancy and interstitials of Te, Cl, O, S, P and Sb in CdTe: A density functional profiles in CdTe of native, Te adatom and vacancy, and anionic non-native interstitial adatoms P, Sb, O, S B.V. All rights reserved. 1. Introduction Cadmium telluride (CdTe) based thin films have emerged

  8. Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3 materials

    E-Print Network [OSTI]

    Micro-Raman spectroscopy of mechanically exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2-like" exfoliated few-quintuple layers of Bi2Te3, Bi2Se3, and Sb2Te3. It is found that crystal symmetry breaking

  9. Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices

    SciTech Connect (OSTI)

    C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

    2003-06-16T23:59:59.000Z

    GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

  10. Effect of Pressure and Chemical Substitutions on the Charge-Density-Wave in LaAgSb2

    SciTech Connect (OSTI)

    Budko,S.; Weiner, T.; Ribeiro, R.; Canfield, P.; Lee, Y.; Vogt, T.; Lacerda

    2006-01-01T23:59:59.000Z

    We present data on the crystal structure and evolution of the electrical resistivity in lightly doped La{sub 1-x}R{sub x}AgSb{sub 2} (R=Gd, Y, Ce, and Nd) at ambient pressure and in LaAgSb{sub 2} under hydrostatic pressure. The upper charge density wave transition is suppressed by both doping and pressure with substitution-related disorder being the dominant mechanism for this suppression in the former case and the anisotropic pressure dependence of the unit cell dimensions (as seen in the c/a ratio) prevailing in the latter case.

  11. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

    DOE Patents [OSTI]

    Sherohman, John W. (Livermore, CA); Coombs, III, Arthur W. (Patterson, CA); Yee, Jick Hong (Livermore, CA); Wu, Kuang Jen J. (Cupertino, CA)

    2007-05-29T23:59:59.000Z

    For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

  12. SeZnSb alloy and its nano tubes, graphene composites properties

    SciTech Connect (OSTI)

    Singh, Abhay Kumar [Department of Physics, Indian Institute of Physics, Bangalore-560012 (India)

    2013-04-15T23:59:59.000Z

    Composite can alter the individual element physical property, could be useful to define the specific use of the material. Therefore, work demonstrates the synthesis of a new composition Se{sub 96}-Zn{sub 2}-Sb{sub 2} and its composites with 0.05% multi-walled carbon nano tubes and 0.05% bilayer graphene, in the glassy form. The diffused amorphous structure of the multi walled carbon nano tubes and bilayer gaphene in the Se{sub 96}-Zn{sub 2}-Sb{sub 2} alloy have been analyzed by using the Raman, X-ray photoluminescence spectroscopy, Furrier transmission infrared spectra, photoluminescence, UV/visible absorption spectroscopic measurements. The diffused prime Raman bands (G and D) have been appeared for the multi walled carbon nano tubes and graphene composites, while the X-ray photoluminescence core energy levels peak shifts have been observed for the composite materials. Subsequently the photoluminescence property at room temperature and a drastic enhancement (upto 80%) in infrared transmission percentage has been obtained for the bilayer graphene composite, along with optical energy band gaps for these materials have been evaluated 1.37, 1.39 and 1.41 eV.

  13. Room temperature performance of mid-wavelength infrared InAsSb nBn detectors

    SciTech Connect (OSTI)

    Soibel, Alexander; Hill, Cory J.; Keo, Sam A.; Hoglund, Linda; Rosenberg, Robert; Kowalczyk, Robert; Khoshakhlagh, Arezou; Fisher, Anita; Ting, David Z.-Y.; Gunapala, Sarath D. [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, California 91030 (United States)

    2014-07-14T23:59:59.000Z

    In this work, we investigate the high temperature performance of mid-wavelength infrared InAsSb-AlAsSb nBn detectors with cut-off wavelengths near 4.5??m. The quantum efficiency of these devices is 35% without antireflection coatings and does not change with temperature in the 77–325?K temperature range, indicating potential for room temperature operation. The current generation of nBn detectors shows an increase of operational bias with temperature, which is attributed to a shift in the Fermi energy level in the absorber. Analysis of the device performance shows that operational bias and quantum efficiency of these detectors can be further improved. The device dark current stays diffusion limited in the 150?K–325?K temperature range and becomes dominated by generation-recombination processes at lower temperatures. Detector detectivities are D*(?)?=?1?×?10{sup 9} (cm Hz{sup 0.5}/W) at T?=?300?K and D*(?)?=?5?×?10{sup 9} (cm Hz{sup 0.5}/W) at T?=?250?K, which is easily achievable with a one stage TE cooler.

  14. Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties

    SciTech Connect (OSTI)

    Das, Suprem R.; Mohammad, Asaduzzaman; Janes, David B., E-mail: janes@ecn.purdue.edu [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Akatay, Cem [School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Khan, Mohammad Ryyan; Alam, Muhammad A. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Maeda, Kosuke [Department of Materials Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta–cho, Midori-ku, Yokohama 226-8502 (Japan); Advanced Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Deacon, Russell S.; Ishibashi, Koji [Advanced Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Chen, Yong P. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907 (United States); Sands, Timothy D. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)

    2014-08-28T23:59:59.000Z

    In this article, electrodeposition method is used to demonstrate growth of InSb nanowire (NW) arrays with hierarchical branched structures and complex morphology at room temperature using an all-solution, catalyst-free technique. A gold coated, porous anodic alumina membrane provided the template for the branched NWs. The NWs have a hierarchical branched structure, with three nominal regions: a “trunk” (average diameter of 150?nm), large branches (average diameter of 100?nm), and small branches (average diameter of sub-10?nm to sub-20?nm). The structural properties of the branched NWs were studied using scanning transmission electron microscopy, transmission electron microscopy, scanning electron microscopy, x-ray diffraction, energy dispersive x-ray spectroscopy, and Raman spectroscopy. In the as-grown state, the small branches of InSb NWs were crystalline, but the trunk regions were mostly nanocrystalline with an amorphous boundary. Post-annealing of NWs at 420?°C in argon produced single crystalline structures along ?311? directions for the branches and along ?111? for the trunks. Based on the high crystallinity and tailored structure in this branched NW array, the effective refractive index allows us to achieve excellent antireflection properties signifying its technological usefulness for photon management and energy harvesting.

  15. Atomic layer deposition of Al{sub 2}O{sub 3} on GaSb using in situ hydrogen plasma exposure

    SciTech Connect (OSTI)

    Ruppalt, Laura B.; Cleveland, Erin R.; Champlain, James G.; Prokes, Sharka M.; Brad Boos, J.; Park, Doewon; Bennett, Brian R. [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375 (United States)

    2012-12-03T23:59:59.000Z

    In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al{sub 2}O{sub 3} interfaces. Prior to atomic layer deposition of an Al{sub 2}O{sub 3} dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical interfaces, as indicated by capacitance-voltage measurements, were obtained using higher plasma powers, longer exposure times, and increasing substrate temperatures up to 250 Degree-Sign C. X-ray photoelectron spectroscopy reveals that the most effective treatments result in decreased SbO{sub x}, decreased Sb, and increased GaO{sub x} content at the interface. This in situ hydrogen plasma surface preparation improves the semiconductor/insulator electrical interface without the use of wet chemical pretreatments and is a promising approach for enhancing the performance of Sb-based devices.

  16. Structural investigation on Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses using x-ray photoelectron spectra

    SciTech Connect (OSTI)

    Wei, Wen-Hou [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Xiang, Shen [College of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Xu, Si-Wei; Wang, Rong-Ping, E-mail: rongping.wang@anu.edu.au [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Fang, Liang [Department of Applied Physics, Chongqing University, Chongqing 401331 (China)

    2014-05-14T23:59:59.000Z

    The structure of Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses (x?=?7.5, 10, 15, 20, 25, 27.5, 30, and 32.5 at. %) has been investigated by x-ray photoelectron spectroscopy (XPS). Different structural units have been extracted and characterized by decomposing XPS core level spectra, the evolution of the relative concentration of each structural unit indicates that, the relative contributions of Se-trimers and Se-Se-Ge(Sb) structure decrease with increasing Ge content until they become zero at chemically stoichiometric glasses of Ge{sub 25}Sb{sub 10}Se{sub 65}, and then the homopolar bonds like Ge-Ge and Sb-Sb begin to appear in the spectra. Increase of homopolar bonds will extend band-tails into the gap and narrow the optical band gap. Thus, the glass with a stoichiometric composition generally has fewer defective bonds and larger optical bandgap.

  17. Science for the 21st Century

    SciTech Connect (OSTI)

    Not Available

    2004-07-01T23:59:59.000Z

    The Federal government plays a key role in supporting the country's science infrastructure, a national treasure, and scientific research, an investment in our future. Scientific discoveries transform the way we think about our universe and ourselves, from the vastness of space to molecular-level biology. In innovations such as drugs derived through biotechnology and new communications technologies we see constant evidence of the power of science to improve lives and address national challenges. We had not yet learned to fly at the dawn of the 20th century, and could not have imagined the amazing 20th century inventions that we now take for granted. As we move into the 21st century, we eagerly anticipate new insights, discoveries, and technologies that will inspire and enrich us for many decades to come. This report presents the critical responsibilities of our Federal science enterprise and the actions taken by the Federal research agencies, through the National Science and Technology Council, to align our programs with scientific opportunity and with national needs. The many examples show how our science enterprise has responded to the President's priorities for homeland and national security, economic growth, health research, and the environment. In addition, we show how the science agencies work together to set priorities; coordinate related research programs; leverage investments to promote discovery, translate science into national benefits, and sustain the national research enterprise; and promote excellence in math and science education and work force development.

  18. ,"St. Clair, MI Natural Gas Pipeline Exports to Canada (MMcf...

    U.S. Energy Information Administration (EIA) Indexed Site

    Exports to Canada (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of Series","Frequency","Latest Data for" ,"Data 1","St. Clair, MI...

  19. ,"St. Clair, MI Natural Gas Pipeline Imports From Canada (MMcf...

    U.S. Energy Information Administration (EIA) Indexed Site

    Imports From Canada (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of Series","Frequency","Latest Data for" ,"Data 1","St. Clair, MI...

  20. EMSL Quarterly Highlights Report: 1st Quarter, FY08

    SciTech Connect (OSTI)

    Showalter, Mary Ann

    2008-01-28T23:59:59.000Z

    The EMSL Quarterly Highlights Report covers the science, staff and user recognition, and publication activities that occurred during the 1st quarter (October 2007 - December 2007) of Fiscal Year 2008.

  1. St. James Bulldog Lil Scrapper IPA Coors Light

    E-Print Network [OSTI]

    Martin, Jeff

    BEER 3 Half Pints St. James · Bulldog · Lil Scrapper IPA Kokanee Coors Light Labatt's Blue 4 Alexander Keith's IPA · White 5 Mill Street Organic Lager Sapporo 6 Honey Dew Organic Beer (500ml) WHITE

  2. EECBG Success Story: St. Louis Launches Plan for More Sustainable...

    Broader source: Energy.gov (indexed) [DOE]

    Using money from the Energy Efficiency Block Grant Program, St. Louis installed new LED fixtures in the City Hall parking structure. The new lights deliver more useful light and...

  3. Vehicle Technologies Office: 21st Century Truck Partners

    Broader source: Energy.gov [DOE]

    The 21st Century Truck Partnership is an industry-government collaboration among heavy-duty engine manufacturers, medium-duty and heavy-duty truck and bus manufacturers, heavy-duty hybrid...

  4. 1st Women-VetsinTech Hackathon @ Facebook

    Broader source: Energy.gov [DOE]

    The 1st EVER Women-VetsinTech hackathon @ Facebook will be a shortened version of the VetsinTech popular weekend event but will be action packed with goal of getting to a MVP (minimum viable...

  5. St. Louis County- Residential Energy Efficiency Loan Program

    Broader source: Energy.gov [DOE]

    St. Louis County SAVES offers loans to residents for energy efficiency improvements in owner-occupied, single-family homes. Loans are available for a variety of energy-efficiency improvements, as...

  6. Wild and Scenic River Acts (Lower St. Croix Riverway)

    Broader source: Energy.gov [DOE]

    The lower portion of the St. Croix River in Minnesota and Wisconsin is regulated under the National Wild and Scenic Rivers Program. Most new residential, commercial, and industrial uses are...

  7. Communicating 21st century statecraft: Evaluating the paradigm shift argument

    E-Print Network [OSTI]

    Chinn, Jacquelyn Nicole

    2011-10-21T23:59:59.000Z

    's criterion for paradigm shift in communications technology and diplomacy, I evaluated State's current program of social media and public diplomacy called 21st Century Statecraft. I conducted a content analysis of organizational Twitter feeds and also...

  8. EMSL Quarterly Highlights Report: 1st Quarter, Fiscal Year 2009

    SciTech Connect (OSTI)

    Showalter, Mary Ann; Kathmann, Loel E.; Manke, Kristin L.

    2009-02-02T23:59:59.000Z

    The EMSL Quarterly Highlights Report covers the science, staff and user recognition, and publication activities that occurred during the 1st quarter (October 2008 - December 2008) of Fiscal Year 2009.

  9. State Waste Discharge Permit ST-4502 Implementation Plan

    SciTech Connect (OSTI)

    BROWN, M.J.; LECLAIR, M.D.

    2000-09-27T23:59:59.000Z

    Plan has been developed to demonstrate compliance with regulatory requirements set forth in Permit ST-3502 and as a line management tool for use in maintaining configuration control of permit as well as documentation used to implement permit requirements.

  10. St. Augustinegrass Warm-season turfgrass. Prefers full sun, but

    E-Print Network [OSTI]

    Ishida, Yuko

    St. Augustinegrass Warm-season turfgrass. Prefers full sun, but has a high tolerance for shade-season grass. It does best in full sun and high temperatures. Goes dormant and turns brown in winter. Very

  11. Processes Limiting the Performance of InAs/GaSb Superlattice Mid-Infrared PIN Mesa Photodiodes

    E-Print Network [OSTI]

    Flatte, Michael E.

    Processes Limiting the Performance of InAs/GaSb Superlattice Mid-Infrared PIN Mesa Photodiodes J. P superlattice pin photodiodes for different temperature and mesa size regimes. We show that the performance of large mesa photodiodes at low temperature is most severely limited by a trap-assisted tunneling leakage

  12. Performance of Gd-doped Ti-based Sb-SnO2 anodes for electrochemical destruction of phenol

    E-Print Network [OSTI]

    by a thermal deposition method. Phenol degradation followed first-order rate kinetics, with the maxi- mum rate with the control (plain Ti/SnO2-Sb). TOC removal and UV scans revealed that different intermediates were produced reserved. Keywords: Gd; SnO2; DSA electrode; Phenol; Electrochemical degradation 1. Introduction

  13. Review of Scientific instruments InAs/Al0.2Ga0.8Sb Quantum Well Hall Sensors

    E-Print Network [OSTI]

    Moshchalkov, Victor V.

    1 Review of Scientific instruments InAs/Al0.2Ga0.8Sb Quantum Well Hall Sensors with improved Boeck, G. Borghs IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Cross-shaped Hall sensors with high. Introduction Hall effect devices are by far the most widely used magnetic sensors today. Their future mainly

  14. Alternative route for the preparation of CoSb{sub 3} and Mg{sub 2}Si derivatives

    SciTech Connect (OSTI)

    Godlewska, E., E-mail: godlewsk@agh.edu.pl [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Krakow (Poland); Mars, K.; Zawadzka, K. [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Krakow (Poland)] [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Krakow (Poland)

    2012-09-15T23:59:59.000Z

    An alternative manufacturing route has been developed for cobalt triantimonide and magnesium disilicide derivatives. Elemental powders were mixed in stoichiometric proportions, cold pressed into cylindrical preforms and heated in oxygen-free environment to initiate the exothermic reaction. According to DTA/TG measurements and observations under high-temperature microscope, the onset of reaction occurred at a temperature not exceeding the melting point of the more volatile component, i.e. antimony in the case of CoSb{sub 3} and magnesium in the case of Mg{sub 2}Si. The reaction products were additionally heat treated to secure homogenization. Dense sinters were obtained by hot uniaxial pressing of the obtained powders in moderate temperature-and-pressure conditions. Several advantages were identified in the proposed technology: absence of liquid phases, relatively short time of the synthesis, possibility of in-situ or ex-situ doping and grain size control. - Graphical abstract: (1) Manufacturing flow sheet for CoSb{sub 3} (milling included) and Mg{sub 2}Si (no milling). (2) Micrographs of CoSb{sub 3} product. (3) Micrographs of Mg{sub 2}Si product. Highlights: Black-Right-Pointing-Pointer The combustion synthesis followed by HP was used for the manufacturing of CoSb{sub 3} or Mg{sub 2}Si. Black-Right-Pointing-Pointer The time of reaction is shorter compared with many other synthesis methods. Black-Right-Pointing-Pointer The process is scalable and practically wasteless.

  15. Mapping two-way grids onto free-form surfaces P. Winslow S. Pellegrino S.B. Sharma

    E-Print Network [OSTI]

    Pellegrino, Sergio

    Mapping two-way grids onto free-form surfaces P. Winslow S. Pellegrino S.B. Sharma Department, however existing techniques focus on relatively simple geometrical rules and algorithms to map a grid onto in the Millennium Dome, London . Use of a grid structure, consisting of a lattice of rods (see Figure 1) may be more

  16. Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices

    E-Print Network [OSTI]

    Krishna, Sanjay

    Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices G. A. Umana transport J. Appl. Phys. 112, 123715 (2012) Characteristics of built-in polarization potentials Appl. Phys. Lett. 101, 243113 (2012) Thermal stability of the deep ultraviolet emission from Al

  17. Transition threshold in Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses

    SciTech Connect (OSTI)

    Wei, Wen-Hou [Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Fang, Liang, E-mail: lfang@cqu.edu.cn [Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Shen, Xiang [Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211 (China); Wang, Rong-Ping [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia)

    2014-03-21T23:59:59.000Z

    Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses with Ge content from 7.5 to 32.5?at.?% have been prepared by melt-quench technique, and the physical parameters including glass transition temperature (T{sub g}), density (?), compactness (C), shear elastic moduli (C{sub s}), compression elastic moduli (C{sub c}), refractive index (n), and optical bandgap (E{sub g}) have been investigated. While all these physical parameters show threshold behavior in the glass with a chemically stoichiometric composition. Raman spectra analysis also indicates that, with increasing Ge content, Se-chains or rings gradually disappear until all Se-atoms are consumed in the glass with a chemically stoichiometric composition. With further increasing Ge content, homopolar Ge-Ge and Sb-Sb bonds are formed and the chemical order in the glasses is violated. The threshold behavior of the physical properties in the Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses can be traced to demixing of networks above the chemically stoichiometric composition.

  18. Public health assessment for St. Louis Airport, Hazelwood Interim Storage/Futura Coatings Company, St. Louis, St. Louis County, Missouri, Region 7. Cerclis No. MOD980633176. Preliminary report

    SciTech Connect (OSTI)

    Not Available

    1994-01-20T23:59:59.000Z

    The St. Louis Airport/Hazelwood Iterim Storage/Futura Coatings Company, a National Priorities List site, is in St. Louis County, Missouri. From 1946 to 1973, the site was used to store radioactive materials resulting from uranium processing. High levels of uranium, thorium, radium, and radon were detected in soil, groundwater, and air. The site is still being used to store radioactive materials. The Agency for Toxic Substances and Disease Registry considers the St. Louis Airport site to be an indeterminate public health hazard. Although there are emissions of radon and the presence of thorium in on-site air and off-site soils and the emission of radiation resulting from the presence of these materials is not currently considered a health hazard. At present conditions, the concentration of radon off-site is indistinguishable from background levels. However, in the past, these contaminants may have been present at levels of health concern.

  19. High thermoelectric performance of In, Yb, Ce multiple filled CoSb{sub 3} based skutterudite compounds

    SciTech Connect (OSTI)

    Ballikaya, Sedat [Department of Physics, University of Istanbul, 34134 Vezneciler, Istanbul (Turkey) [Department of Physics, University of Istanbul, 34134 Vezneciler, Istanbul (Turkey); Department of Physics, University of Michigan, Ann Arbor, MI, 48109 (United States); Uzar, Neslihan; Yildirim, Saffettin [Department of Physics, University of Istanbul, 34134 Vezneciler, Istanbul (Turkey)] [Department of Physics, University of Istanbul, 34134 Vezneciler, Istanbul (Turkey); Salvador, James R. [Chemical Sci. and Mater. Systems Laboratory, General Motors Global R and D Center, Warren, MI 48090 (United States)] [Chemical Sci. and Mater. Systems Laboratory, General Motors Global R and D Center, Warren, MI 48090 (United States); Uher, Ctirad, E-mail: cuher@umich.edu [Department of Physics, University of Michigan, Ann Arbor, MI, 48109 (United States)] [Department of Physics, University of Michigan, Ann Arbor, MI, 48109 (United States)

    2012-09-15T23:59:59.000Z

    Filling voids with rare earth atoms is an effective way to lowering thermal conductivity which necessarily enhances thermoelectric properties of skutterudite compounds. Yb atom is one of the most effective species among the rare earth atoms for filling the voids in the skutterudite structure due to a large atomic mass, radius and it is intermediate valence state. In this work, we aim to find the best filling partners for Yb using different combinations of Ce and In as well as to optimize actual filling fraction in order to achieve high values of ZT. The traditional method of synthesis relying on melting-annealing and followed by spark plasma sintering was used to prepare all samples. The thermoelectric properties of four samples of Yb{sub 0.2}In{sub 0.2}Co{sub 4}Sb{sub 12}, Yb{sub 0.2}Ce{sub 0.15}Co{sub 4}Sb{sub 12}, Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12}, and Yb{sub 0.3}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} (nominal) were examined based on the Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient. Hall coefficient and Seebeck coefficient signs confirm that all samples are n-type skutterudite compounds. Carrier density increases with the increasing Yb+Ce content. A high power factor value of 57.7 {mu}W/K{sup 2}/cm for Yb{sub 0.2}Ce{sub 0.15}Co{sub 4}Sb{sub 12} and a lower thermal conductivity value of 2.82 W/m/K for Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} indicate that small quantities of Ce with In may be a good partner to Yb to reduce the thermal conductivity further and thus enhance the thermoelectric performance of skutterudites. The highest ZT value of 1.43 was achieved for Yb{sub 0.2}Ce{sub 0.15}In{sub 0.2}Co{sub 4}Sb{sub 12} triple-filled skutterudite at 800 K. - Graphical abstract: Thermoelectric figure of merit of Yb{sub x}In{sub y}Ce{sub z}Co{sub 4}Sb{sub 12} (0{<=}x,y,z{<=}0.18 actual) compounds versus temperature. Highlights: Black-Right-Pointing-Pointer TE properties of Yb,In,Ce multiple-filled Yb{sub x}In{sub y}Ce{sub z}Co{sub 4}Sb{sub 12} skutterudites were investigated. Black-Right-Pointing-Pointer Thermal conductivity is strongly suppressed by multiple filling of Yb, Ce and In. Black-Right-Pointing-Pointer Small amounts of Ce and In with Yb are beneficial for the enhancement of TE performance. Black-Right-Pointing-Pointer The highest ZT=1.43 was achieved with Yb{sub 0.07}In{sub 0.094}Ce{sub 0.065}Co{sub 4}Sb{sub 11.92} at 800 K.

  20. Careers 2011 April 7, 2011 1. 21st Mortgage Corp 620 Market ST Knoxville TN 37902 Gene Crabtree

    E-Print Network [OSTI]

    Karsai, Istvan

    Joseph Anderson, et al 15. King College 1350 King College RD Bristol TN 37620 Mona Salyer 16. Mary Kay Kelly Mullins 5. Bristol TN Police Dept 801 Anderson ST Bristol TN 37620 Grant Hale 6. Carson Newman

  1. Spectroscopy and capacitance measurements of tunneling resonances in an Sb-implanted point contact.

    SciTech Connect (OSTI)

    Wendt, Joel Robert; Rahman, Rajib; Ten Eyck, Gregory A.; Eng, Kevin; Carroll, Malcolm S.; Young, Ralph Watson; Lilly, Michael Patrick; Stalford, Harold Lenn; Bishop, Nathaniel; Bielejec, Edward Salvador

    2010-08-01T23:59:59.000Z

    We fabricated a split-gate defined point contact in a double gate enhancement mode Si-MOS device, and implanted Sb donor atoms using a self-aligned process. E-beam lithography in combination with a timed implant gives us excellent control over the placement of dopant atoms, and acts as a stepping stone to focused ion beam implantation of single donors. Our approach allows us considerable latitude in experimental design in-situ. We have identified two resonance conditions in the point contact conductance as a function of split gate voltage. Using tunneling spectroscopy, we probed their electronic structure as a function of temperature and magnetic field. We also determine the capacitive coupling between the resonant feature and several gates. Comparison between experimental values and extensive quasi-classical simulations constrain the location and energy of the resonant level. We discuss our results and how they may apply to resonant tunneling through a single donor.

  2. Properties of CoSb{sub 3} films grown by pulsed laser deposition

    SciTech Connect (OSTI)

    Christen, H.M.; Mandrus, D.G.; Norton, D.P.; Boatner, L.A.; Sales, B.C.

    1997-07-01T23:59:59.000Z

    Polycrystalline CoSb{sub 3} films were grown on a variety of electrically insulating substrates by pulsed laser ablation from a stoichiometric hot-pressed target. These films are fully crystallized in the skutterudite structure, and the grains exhibit a strongly preferred alignment of the cubic [310]-axis perpendicular to the substrate surface. The film quality is studied for different single-crystal substrates and as a function of growth temperature and background gas. Hall measurements show that the films are p-type semiconducting with a room-temperature carrier density of 3 x 10{sup 20} holes/cm{sup 3}. The Hall mobility is found to be 50 to 60 cm{sup 2}/Vs, which is high for such a heavily-doped material. The Seebeck coefficient and the resistivity are measured as a function of temperature and are compared to bulk measurements.

  3. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-01-07T23:59:59.000Z

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  4. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Carrington, P. J. [Department of Electronic and Electrical Engineering, University College London, London (United Kingdom); Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-07-28T23:59:59.000Z

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  5. Ultrafast terahertz-induced response of GeSbTe phase-change materials

    SciTech Connect (OSTI)

    Shu, Michael J. [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Zalden, Peter [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Chen, Frank [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Weems, Ben [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Chatzakis, Ioannis [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Xiong, Feng; Jeyasingh, Rakesh; Pop, Eric; Philip Wong, H.-S. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Hoffmann, Matthias C. [SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University, 52056 Aachen (Germany); JARA–Fundamentals of Information Technology, RWTH Aachen University, 52056 Aachen (Germany); Lindenberg, Aaron M., E-mail: aaronl@stanford.edu [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2014-06-23T23:59:59.000Z

    The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap transmission as a probe of the electronic and structural response below the switching threshold, we observe a field-induced heating of the carrier system and resolve the picosecond-time-scale energy relaxation processes and their dependence on the sample annealing condition in the crystalline phase. In the amorphous phase, an instantaneous electroabsorption response is observed, quadratic in the terahertz field, followed by field-driven lattice heating, with Ohmic behavior up to 200?kV/cm.

  6. Evaluation of electron mobility in InSb quantum wells by means of percentage-impact

    SciTech Connect (OSTI)

    Mishima, T. D.; Edirisooriya, M.; Santos, M. B. [Homer L. Dodge Department of Physics and Astronomy, and Center for Semiconductor Physics in Nanostructure, University of Oklahoma, 440 W. Brooks St., Norman, OK 73019 (United States)

    2014-05-15T23:59:59.000Z

    In order to quantitatively analyze the contribution of each scattering factor toward the total carrier mobility, we use a new convenient figure-of-merit, named a percentage impact. The mobility limit due to a scattering factor, which is widely used to summarize a scattering analysis, has its own advantage. However, a mobility limit is not quite appropriate for the above purpose. A comprehensive understanding of the difference in contribution among many scattering factors toward the total carrier mobility can be obtained by evaluating percentage impacts of scattering factors, which can be straightforwardly calculated from their mobility limits and the total mobility. Our percentage impact analysis shows that threading dislocation is one of the dominant scattering factors for the electron transport in InSb quantum wells at room temperature.

  7. Structural and optical properties of Sb{sub 2}S{sub 3} nanocrystals in glass

    SciTech Connect (OSTI)

    Mishra, Rakesh K., E-mail: mishrarake@gmail.com; Kashyap, Raman, E-mail: mishrarake@gmail.com; Vedeshwar, A. G., E-mail: mishrarake@gmail.com; Tandon, R. P., E-mail: mishrarake@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 1-10007 (India)

    2014-04-24T23:59:59.000Z

    In this work conventional solid state precipitation method is adopted to fabricate Sb{sub 2}S{sub 3} nanocrystals in glass. The glass composition is optimized for proper host glass matrix to grow antimony trisulphide semiconductor quantum dots. The dot size is modified by heat treatment of glass samples in the temperature range from 550°C to 700°C for various time durations. Structural studies are carried out by X-ray diffraction and transmission electron microscopy and nanoparticles with size ranges from 8 nm to 70 nm are obtained. Quantum dots so grown were further characterized by optical absorption spectroscopy and a blue shift is observed for absorption edge energy that conform the quantum confinement effect.

  8. Thermoelectric properties of p-type (Bi{sub 1{minus}x}Sb{sub x}){sub 2}Te{sub 3} fabricated by mechanical alloying process

    SciTech Connect (OSTI)

    Jung, B.Y.; Choi, J.S.; Oh, T.S.; Hyun, D.B.

    1997-07-01T23:59:59.000Z

    Thermoelectric properties of polycrystalline (Bi{sub 1{minus}x}Sb{sub x}){sub 2}Te{sub 3} (0.75 {le} x {le} 0.85), fabricated by mechanical alloying and hot pressing methods, have been investigated. Formation of (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} alloy powder was completed by mechanical alloying for 5 hours at ball-to-material ratio of 5:1, and processing time for (Bi{sub 1{minus}sub x}Sb{sub x}){sub 2}Te{sub 3} formation increased with Sb{sub 2}Te{sub 3} content x. When (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} was hot pressed at temperatures ranging from 300 C to 550 C for 30 minutes, figure-of-merit increased with hot pressing temperature and maximum value of 2.8 x 10{sup {minus}3}/K could be obtained by hot pressing at 550 C. When hot pressed at 550 C, (Bi{sub 0.2}Sb{sub 0.8}){sub 2}Te{sub 3} exhibited figure-of-merit of 2.92 x 10{sup {minus}3}/K, which could be improved to 2.97 x 10{sup {minus}3}/K with addition of 1 wt% Sb as acceptor dopant.

  9. Electronic and optical properties of TiCoSb under different pressures

    SciTech Connect (OSTI)

    Xu Bin, E-mail: hnsqxb@163.com [Department of Mathematics and Information Sciences, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Zhang Jing [Department of Mathematics and Information Sciences, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Liang Jianchu [Department of electronic science, Huizhou University, Guangdong 516001 (China); Gao Guoying; Yi Lin [Department of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2012-08-15T23:59:59.000Z

    The electronic structure and optical properties of TiCoSb are studied by the first-principles calculation. It is found that the band gaps increase with the pressure increasing. It is noted that the increase of the band gap is due to the electrons of Ti 3d and Co 3d of the valence band (VB) shifting away from the Fermi level. Our calculation indicates that TiCoSb has the large density of state near the Fermi level; moreover, the changes of the density of states near the Fermi level mainly are caused by Ti 3d and Co 3d under the different pressures. It is noted that the absorption edge increases with an increase of pressure. As pressure increases, the static dielectric constants {epsilon}{sub 1}(0) decrease. All peaks of the imaginary part of the dielectric function {epsilon}{sub 2}({omega}) move towards higher energies within increasing pressure. - Graphical abstract: The first peak positions of the absorption spectrum increase and shift the high energy with an increase of pressure. The buleshift of the absorption edge could be observed. Highlights: Black-Right-Pointing-Pointer It is noted that the increase of the band gap is due to the electrons of Ti 3d and Co 3d of VB moving away from the Fermi level. Black-Right-Pointing-Pointer It is noted that the absorption edge increases with an increase of pressure. Black-Right-Pointing-Pointer As pressure increases, the static dielectric constant {epsilon}{sub 1}(0) decreases. Black-Right-Pointing-Pointer All peaks of the imaginary part of the dielectric function {epsilon}{sub 2}({omega}) move to wards higher energies within creasing pressure.

  10. High thermoelectric performance BiSbTe alloy with unique low-dimensional structure

    SciTech Connect (OSTI)

    Xie Wenjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States); Tang Xinfeng; Yan Yonggao; Zhang Qingjie [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Tritt, Terry M. [Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634-0978 (United States)

    2009-06-01T23:59:59.000Z

    We report a detailed description of an innovative route of a melt spinning (MS) technique combined with a subsequent spark plasma sintering process in order to obtain high performance p-type Bi{sub 0.52}Sb{sub 1.48}Te{sub 3} bulk material, which possesses a unique low-dimensional structure. The unique structure consists of an amorphous structure, 5-15 nm fine nanocrystalline regions, and coherent interfaces between the resulting nanocrystalline regions. Measurements of the thermopower, electrical conductivity, and thermal conductivity have been performed over a range of temperature of 300-400 K. We found that MS technique can give us considerable control over the resulting nanostructure with good thermal stability during the temperature range of 300-400 K and this unique structure can effectively adjust the transport of phonons and electrons, in a manner such that it is beneficial to the overall thermoelectric performance of the material, primarily a reduction in the lattice thermal conductivity. Subsequently, this results in a maximum figure of merit ZT value of 1.56 at 300 K for p-type Bi{sub 0.52}Sb{sub 1.48}Te{sub 3} bulk material. This ZT value is over a 50% improvement of that of the state of the art commercial Bi{sub 2}Te{sub 3} materials. We also report results of thermal cycling of this material for over one hundred cycles between 300-400 K. Our work offers an innovative route for developing high performance bismuth telluride based alloys and devices, which have even broader prospects for commercial applications. This technique may also be applicable to other thermoelectric materials.

  11. The optimization of interfaces in InAsSb/InGaAs strained-layer superlattices grown by metal-organic chemical vapor deposition

    SciTech Connect (OSTI)

    Biefeld, R.M.; Baucom, K.C.; Kurtz, S.R.

    1993-12-31T23:59:59.000Z

    We have prepared InAsSb/InGaAs strained-layer superlattice (SLS) semiconductors by metal-organic chemical vapor deposition (MOCVD) under a variety of conditions. Presence of an InGaAsSb interface layer is indicated by x-ray diffraction patterns. Optimized growth conditions involved the use of low pressure, short purge times, and no reactant flow during the purges. MOCVD was used to prepare an optically pumped, single heterostructure InAsSb/InGaAs SLS/InPSb laser which emitted at 3.9 {mu}m with a maximum operating temperature of approximately 100 K.

  12. Bicon Namibia Consulting Engineers | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORT Americium/CuriumSunways JV Jump to:Bhoruka Power Corporation Ltd

  13. Sustainable Land Management in Northern Namibia

    E-Print Network [OSTI]

    and low water holding capacity (Bolivia) #12;Perspective Similar soil (Kavango) #12;Increased Demand for Food + Energy Production Expansion onto Less Resilient Lands Reduced Production per Unit Area

  14. Jimmy Krozel is with Metron Aviation, Inc., Herndon, VA. Changkil Lee and Joseph S.B. Mitchell are with Stony Brook University, Stony Brook, NY.

    E-Print Network [OSTI]

    Mitchell, Joseph S.B.

    . Jimmy Krozel is with Metron Aviation, Inc., Herndon, VA. Changkil Lee and Joseph S.B. Mitchell 1064-3818/95/030163-20 159 Turn-Constrained Route Planning for Avoiding Hazardous Weather Jimmy Krozel

  15. CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Li Jingjing; Liu Shi; Wang Shumin; Ding Ding; Johnson, Shane R.; Zhang Yonghang [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Liu Xinyu; Furdyna, Jacek K. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Smith, David J. [Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States); Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

    2012-03-19T23:59:59.000Z

    CdSe/CdTe superlattices are grown on GaSb substrates using molecular beam epitaxy. X-ray diffraction measurements and cross-sectional transmission electron microscopy images indicate high crystalline quality. Photoluminescence (PL) measurements show the effective bandgap varies with the superlattice layer thicknesses and confirm the CdSe/CdTe heterostructure has a type-II band edge alignment. The valence band offset between unstrained CdTe and CdSe is determined as 0.63 {+-} 0.06 eV by fitting the measured PL peak positions using the envelope function approximation and the Kronig-Penney model. These results suggest that CdSe/CdTe superlattices are promising candidates for multi-junction solar cells and other optoelectronic devices based on GaSb substrates.

  16. Methods for chemical recovery of non-carrier-added radioactive tin from irradiated intermetallic Ti-Sb targets

    DOE Patents [OSTI]

    Lapshina, Elena V. (Troitsk, RU); Zhuikov, Boris L. (Troitsk, RU); Srivastava, Suresh C. (Setauket, NY); Ermolaev, Stanislav V. (Obninsk, RU); Togaeva, Natalia R. (Obninsk, RU)

    2012-01-17T23:59:59.000Z

    The invention provides a method of chemical recovery of no-carrier-added radioactive tin (NCA radiotin) from intermetallide TiSb irradiated with accelerated charged particles. An irradiated sample of TiSb can be dissolved in acidic solutions. Antimony can be removed from the solution by extraction with dibutyl ether. Titanium in the form of peroxide can be separated from tin using chromatography on strong anion-exchange resin. In another embodiment NCA radiotin can be separated from iodide solution containing titanium by extraction with benzene, toluene or chloroform. NCA radiotin can be finally purified from the remaining antimony and other impurities using chromatography on silica gel. NCA tin-117m can be obtained from this process. NCA tin-117m can be used for labeling organic compounds and biological objects to be applied in medicine for imaging and therapy of various diseases.

  17. Effect of antimony on the deep-level traps in GaInNAsSb thin films

    SciTech Connect (OSTI)

    Islam, Muhammad Monirul, E-mail: islam.monir.ke@u.tsukuba.ac.jp; Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro ku, Tokyo 153-8904 (Japan); Sakurai, Takeaki; Akimoto, Katsuhiro [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)

    2014-09-15T23:59:59.000Z

    Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41?eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

  18. Performance Evaluation and Opportunity Assessment for St. Bernard Project

    SciTech Connect (OSTI)

    Dickson, B.

    2011-06-01T23:59:59.000Z

    This report describes efforts by IBACOS, a Department of Energy Building America research team, in the St. Bernard Project, a nonprofit, community-based organization whose mission is to assist Hurricane Katrina survivors return to their homes in the New Orleans area. The report focuses on energy modeling results of two plans that the St. Bernard Project put forth as 'typical' building types and on quality issues that were observed during the field walk and Best Practice recommendations that could improve the energy efficiency and durability of the renovated homes.

  19. Abstract KeLP \\Lambda S.B. Baden y , P. Colella z , D. Shalit y , B. Van

    E-Print Network [OSTI]

    Baden, Scott B.

    ``paper'' 2000/12/12 page 1 i i i i i i i i Abstract KeLP \\Lambda S.B. Baden y , P. Colella z , D. The resultant infrastructure, called KeLP \\Lambda , has been applied to a variety of applications including­ tured adaptive refinement for ab­initio molecular dynamics [13]. A distinguishing feature of KeLP

  20. Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy

    SciTech Connect (OSTI)

    Hosseini Vajargah, S.; Woo, S. Y.; Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Brockhouse Institute for Material Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Ghanad-Tavakoli, S. [Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Kleiman, R. N.; Preston, J. S. [Brockhouse Institute for Material Research, McMaster University, Hamilton, Ontario L8S 4M1 (Canada); Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

    2012-11-01T23:59:59.000Z

    The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs' faceting.

  1. 60 keV Ar{sup +}-ion induced modification of microstructural, compositional, and vibrational properties of InSb

    SciTech Connect (OSTI)

    Datta, D. P.; Garg, S. K.; Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar, Odisha 751005 (India); Satpati, B. [Surface Physics and Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Sahoo, P. K. [School of Physical Sciences, National Institute of Science Education and Research, Bhubaneswar 751005, Odisha (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Uttar Pradesh 203207 (India); Dhara, S. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2014-10-14T23:59:59.000Z

    Room temperature irradiation of InSb(111) by 60?keV Ar{sup +}-ions at normal (0°) and oblique (60°) angles of incidence led to the formation of nanoporous structure in the high fluence regime of 1?×?10{sup 17} to 3?×?10{sup 18} ions cm{sup ?2}. While a porous layer comprising of a network of interconnected nanofibers was generated by normal ion incidence, evolution of plate-like structures was observed for obliquely incident ions. Systematic studies of composition and structure using energy dispersive x-ray spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, Raman mapping, grazing incidence x-ray diffraction, and cross-sectional transmission electron microscopy revealed a high degree of oxidation of the ion-induced microstructures with the presence of In{sub 2}O{sub 3} and Sb{sub 2}O{sub 3} phases and presence of nanocrystallites within the nanoporous structures. The observed structural evolution was understood in terms of processes driven by ion-induced defect accumulation within InSb.

  2. Electron interactions and Dirac fermions in graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices

    SciTech Connect (OSTI)

    Sa, Baisheng [College of Materials, and Collaborative Innovation Center of Chemistry for Energy Materials, Xiamen University, Xiamen 361005 (China); Sun, Zhimei, E-mail: zmsun@buaa.edu.cn [School of Materials Science and Engineering, and Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191 (China)

    2014-06-21T23:59:59.000Z

    Graphene based superlattices have been attracted worldwide interest due to the combined properties of the graphene Dirac cone feature and all kinds of advanced functional materials. In this work, we proposed a novel series of graphene-Ge{sub 2}Sb{sub 2}Te{sub 5} superlattices based on the density functional theory calculations. We demonstrated the stability in terms of energy and lattice dynamics for such kind of artificial materials. The analysis of the electronic structures unravels the gap opening nature at Dirac cone of the insert graphene layer. The Dirac fermions in the graphene layers are strongly affected by the electron spin orbital coupling in the Ge{sub 2}Sb{sub 2}Te{sub 5} layers. The present results show the possible application in phase-change data storage of such kind of superlattice materials, where the Ge{sub 2}Sb{sub 2}Te{sub 5} layers exhibit as the phase-change data storage media and the graphene layer works as the electrode, probe, and heat conductor.

  3. Activity of the kinesin spindle protein inhibitor ispinesib (SB-715992) in models of breast cancer

    SciTech Connect (OSTI)

    Purcell, James W; Davis, Jefferson; Reddy, Mamatha; Martin, Shamra; Samayoa, Kimberly; Vo, Hung; Thomsen, Karen; Bean, Peter; Kuo, Wen Lin; Ziyad, Safiyyah; Billig, Jessica; Feiler, Heidi S; Gray, Joe W; Wood, Kenneth W; Cases, Sylvaine

    2009-06-10T23:59:59.000Z

    Ispinesib (SB-715992) is a potent inhibitor of kinesin spindle protein (KSP), a kinesin motor protein essential for the formation of a bipolar mitotic spindle and cell cycle progression through mitosis. Clinical studies of ispinesib have demonstrated a 9% response rate in patients with locally advanced or metastatic breast cancer, and a favorable safety profile without significant neurotoxicities, gastrointestinal toxicities or hair loss. To better understand the potential of ispinesib in the treatment of breast cancer we explored the activity of ispinesib alone and in combination several therapies approved for the treatment of breast cancer. We measured the ispinesib sensitivity and pharmacodynamic response of breast cancer cell lines representative of various subtypes in vitro and as xenografts in vivo, and tested the ability of ispinesib to enhance the anti-tumor activity of approved therapies. In vitro, ispinesib displayed broad anti-proliferative activity against a panel of 53 breast cell-lines. In vivo, ispinesib produced regressions in each of five breast cancer models, and tumor free survivors in three of these models. The effects of ispinesib treatment on pharmacodynamic markers of mitosis and apoptosis were examined in vitro and in vivo, revealing a greater increase in both mitotic and apoptotic markers in the MDA-MB-468 model than in the less sensitive BT-474 model. In vivo, ispinesib enhanced the anti-tumor activity of trastuzumab, lapatinib, doxorubicin, and capecitabine, and exhibited activity comparable to paclitaxel and ixabepilone. These findings support further clinical exploration of KSP inhibitors for the treatment of breast cancer.

  4. Quantum efficiency investigations of type-II InAs/GaSb midwave infrared superlattice photodetectors

    SciTech Connect (OSTI)

    Giard, E., E-mail: edouard.giard@onera.fr; Ribet-Mohamed, I.; Jaeck, J.; Viale, T.; Haďdar, R. [ONERA, DOTA, Chemin de la Huničre, 91761 Palaiseau Cedex (France); Taalat, R.; Delmas, M.; Rodriguez, J.-B.; Christol, P. [Institut d'Electronique du Sud, UMR-CNRS 5214, Université Montpellier 2, Place Eugčne Bataillon, 34095 Montpellier Cedex 5 (France); Steveler, E.; Bardou, N. [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis (France); Boulard, F. [CEA, LETI, MINATEC Campus, 17 Avenue des martyrs, 38054 Grenoble (France)

    2014-07-28T23:59:59.000Z

    We present in this paper a comparison between different type-II InAs/GaSb superlattice (T2SL) photodiodes and focal plane array (FPA) in the mid-wavelength infrared domain to understand which phenomenon drives the performances of the T2SL structure in terms of quantum efficiency (QE). Our measurements on test photodiodes suggest low minority carrier diffusion length in the “InAs-rich” design, which penalizes carriers' collection in this structure for low bias voltage and front side illumination. This analysis is completed by a comparison of the experimental data with a fully analytic model, which allows to infer a hole diffusion length shorter than 100?nm. In addition, measurements on a FPA with backside illumination are finally presented. Results show an average QE in the 3–4.7 ?m window equal to 42% for U{sub bias}?=??0.1?V, 77?K operating temperature and no anti-reflection coating. These measurements, completed by modulation transfer function and noise measurements, reveal that the InAs-rich design, despite a low hole diffusion length, is promising for high performance infrared imaging applications.

  5. XRD, Electron Microscopy and Vibrational Spectroscopy Characterization of Simulated SB6 HLW Glasses - 13028

    SciTech Connect (OSTI)

    Stefanovsky, S.V. [SIA Radon, 7th Rostovskii lane 2/14, Moscow 119121 (Russian Federation) [SIA Radon, 7th Rostovskii lane 2/14, Moscow 119121 (Russian Federation); Institute of Physical Chemistry and Electrochemistry RAS, Leninskii av. 31, Moscow 119991 (Russian Federation); Nikonov, B.S.; Omelianenko, B.I. [Institute of Geology of Ore Deposits, Petrography, Mineralogy and Geochemistry RAS, Staromonetniy lane 35, Moscow 100117 (Russian Federation)] [Institute of Geology of Ore Deposits, Petrography, Mineralogy and Geochemistry RAS, Staromonetniy lane 35, Moscow 100117 (Russian Federation); Choi, A.; Marra, J.C. [Savannah River National Laboratory, Building 773A, Aiken 29808 (United States)] [Savannah River National Laboratory, Building 773A, Aiken 29808 (United States)

    2013-07-01T23:59:59.000Z

    Sample glasses have been made using SB6 high level waste (HLW) simulant (high in both Al and Fe) with 12 different frit compositions at a constant waste loading of 36 wt.%. As follows from X-ray diffraction (XRD) and optical and scanning electron microscopy (SEM) data, all the samples are composed of primarily glass and minor concentration of spinel phases which form both isometric grains and fine cubic (?1 ?m) crystals. Infrared spectroscopy (IR) spectra of all the glasses within the range of 400-1600 cm{sup -1} consist of the bands due to stretching and bending modes in silicon-oxygen, boron-oxygen, aluminum-oxygen and iron-oxygen structural groups. Raman spectra showed that for the spectra of all the glasses within the range of 850-1200 cm{sup -1} the best fit is achieved by suggestion of overlapping of three major components with maxima at 911-936 cm{sup -1}, 988-996 cm{sup -1} and 1020-1045 cm{sup -1}. The structural network is primarily composed of metasilicate chains and rings with embedded AlO{sub 4} and FeO{sub 4} tetrahedra. Major BO{sub 4} tetrahedra and BO{sub 3} triangles form complex borate units and are present as separate constituents. (authors)

  6. St. Louis airport site annual environmental report for calendar year 1990, St. Louis, Missouri

    SciTech Connect (OSTI)

    Not Available

    1991-08-01T23:59:59.000Z

    Environmental monitoring of the US Department of Energy's (DOE) St. Louis Airport Site (SLAPS) and surrounding area began in 1984. SLAPS is part of the Formerly Utilized Sites Remedial Action Program (FUSRAP), a DOE program to decontaminate or otherwise control sites where residual radioactive materials remain from the early years of the nation's atomic energy program or from commercial operations causing conditions that Congress has authorized DOE to remedy. Monitoring results are compared with applicable Environmental Protection Agency (EPA) standards; federal, state, and local applicable or relevant and appropriate requirements (ARARs); and/or DOE derived concentration guidelines (DCGs). Environmental standards, ARARs, and DCGs are established to protect public health and the environment. Results from the 1990 environmental monitoring program demonstrated that the concentrations of contaminants of concern were all below applicable standards, ARARs, and guidelines. Site activities in 1990 were limited to maintenance. SLAPS was in compliance with all applicable regulations during 1990 and has remained in compliance since 1984, when the environmental monitoring program and remedial action began.

  7. Piton Peaks, St. Lucia 515 Caribbean Discovery V1

    E-Print Network [OSTI]

    Connor, Ed

    · · · · · #12;V1 Piton Peaks, St. Lucia 515 Caribbean Discovery V1 PRSRTSTD U.S.POSTAGE PERMIT cruise the turquoise waters of the Caribbean. Sail from Miami to the beautiful island of Tortola, home beaches, and explore colorful towns as you discover the Caribbean. Cruise to celebrated ports aboard

  8. PROCEEDINGS OF THE 31st ICRC, L ODZ 2009 1

    E-Print Network [OSTI]

    Usoskin, Ilya G.

    , Finland Abstract. Cosmogenic nuclides are produced by cosmic rays in the atmosphere and used in many research applications, such as paleoclimatology, solar activity reconstructions, dating methods, etc at altitude h, provided by the CRAC model; S(t, E) is the differential energy spectrum of cosmic rays

  9. Energy Systems & Climate Change The Evergreen St. College

    E-Print Network [OSTI]

    Zita, E.J.

    project · Investigate your question; test your hypotheses · Build something? Generate and/or analyze data. Reference: For each of your sources, start with the data: · Books: Title, Author, year (publisher, ISBNResearch in Energy Systems & Climate Change The Evergreen St. College Dr. E.J. Zita zita

  10. Marjorie V. Smith Compiled by Margot St. Louis (1979)

    E-Print Network [OSTI]

    Handy, Todd C.

    Marjorie V. Smith fonds Compiled by Margot St. Louis (1979) Revised by Erwin Wodarczak (2004 Catalogue entry (UBC Library catalogue) #12; Fonds Description Marjorie V. Smith fonds. ­ 19581973 Marjorie V. Smith was the program director for the Aging and Human Relations Division at UBC's Centre

  11. DDT chapter from the 1st Modeling the Environment

    E-Print Network [OSTI]

    Ford, Andrew

    DDT chapter from the 1st edition of Modeling the Environment (included on the BWeb to supplement to simulate the flow of material through the environment. The flows can involve multiple media such as water are normally constructed in a step by step manner based on our understanding of material flows in each medium

  12. Grass Upland Water Quality Wednesday November 21st 2007

    E-Print Network [OSTI]

    Quinton, John

    Grass Upland Water Quality Workshop Wednesday November 21st 2007 Water Quality in the Uplands financial support to farming could protect rural economies while reducing this damage to water. Help farmers · Unnatural spates ­ potential downstream flooding little water retention on land uneven flows lack

  13. 716 Langdon St 2nd Floor Red Gym

    E-Print Network [OSTI]

    Sheridan, Jennifer

    716 Langdon St 2nd Floor Red Gym Madison WI 53706 (608) 262-4503 http://msc.wisc.edu 1 FOLLOW OUR of witnesses may always go before you and walk beside you. We bestow a red and white kente stole upon all of our graduates. Red, for passion and sacrifice. White, for initiation and new beginnings. Each stole

  14. Energy: a historical perspective and 21st century forecast

    SciTech Connect (OSTI)

    Salvador, Amos [University of Texas, Austin, TX (United States)

    2005-07-01T23:59:59.000Z

    Contents are: Preface; Chapter 1: introduction, brief history, and chosen approach; Chapter 2: human population and energy consumption: the future; Chapter 4: sources of energy (including a section on coal); Chapter 5: electricity: generation and consumption; and Chapter 6: energy consumption and probable energy sources during the 21st century.

  15. NSTX Upgrade: ST research to accelerate fusion development

    E-Print Network [OSTI]

    parameter regimes to advance predictive capability - for ITER and beyond · Develop ST as fusion energy-Z + Li Theme 4. Harnessing Fusion Power Leader in physics basis and design of low-A fusion systems Theme non-inductive ramp-up from ~0.4 1MA · HI-start-up Te, ne too low for fast-wave, NBI coupling need

  16. UNIVERSITY OF ST ANDREWS SCHOOL OF PHYSICS AND ASTRONOMY

    E-Print Network [OSTI]

    Greenaway, Alan

    UNIVERSITY OF ST ANDREWS SCHOOL OF PHYSICS AND ASTRONOMY Guidance notes for potential exchange and study abroad students The School of Physics and Astronomy is pleased to welcome exchange and study to the nature of the module it is not permitted to take this introductory module as well as any other astronomy

  17. Proceeding of the 1st International Forum on Heat Transfer

    E-Print Network [OSTI]

    Maruyama, Shigeo

    Proceeding of the 1st International Forum on Heat Transfer November 24-26, 2004, Kyoto, Japan Paper No. HEAT TRANSFER PROBLEMS RELATED WITH CARBON NANOTUBES BY MOLECULAR DYNAMICS-BASED SIMULATIONS Dynamics Simulation, Thermal Conductance ABSTRACT Several heat transfer problems related to single

  18. Illinois Institute of Technology 3300 S. Federal St.

    E-Print Network [OSTI]

    Heller, Barbara

    IIT Press Illinois Institute of Technology 3300 S. Federal St. Main Building 301 Chicago, IL 60616 Dissertation Printing Form Student's Signature Date Advisor's Signature Date Graduate College Approval Date r Dissertation to be printed exactly as approved by the thesis committee and the thesis defense examiner. r

  19. The Mathematics Education into the 21st Century Project

    E-Print Network [OSTI]

    Spagnolo, Filippo

    The Mathematics Education into the 21st Century Project Proceedings ooff tthhee dispute resolution procedures, health and safety obligations, quality assurance and the administrative that this project filled was the provision of an orientation to a particular university context, The University

  20. The Mathematics Education into the 21st Century Project

    E-Print Network [OSTI]

    Spagnolo, Filippo

    The Mathematics Education into the 21st Century Project Proceedings ooff tthhee the following procedures of determining a minimum or a maximum: 1. Equate the derivative to zero, then find the procedures to identify the minimum or maximum, the following are not addressed by the approach: Learners

  1. The Mathematics Education into the 21st Century Project

    E-Print Network [OSTI]

    Spagnolo, Filippo

    The Mathematics Education into the 21st Century Project Proceedings ooff tthhee information on the statistical software available at the faculty, use of computer rooms, degree projects in the history but also in the teaching organization and methods, in procedures used to assess the knowledge

  2. The Mathematics Education into the 21st Century Project

    E-Print Network [OSTI]

    Spagnolo, Filippo

    The Mathematics Education into the 21st Century Project Proceedings ooff tthhee behaviour which is made up of a set of simple reasons. Many complex behaviour-procedures may be defined-processing expressed by the symbolic procedures in the situations in which responses could be controlled (Skinner, 1968

  3. Database Research: Achievements and Opportunities Into the 21st Century

    E-Print Network [OSTI]

    Ullman, Jeffrey D.

    Database Research: Achievements and Opportunities Into the 21st Century Avi Silberschatz, Mike Stonebraker, Jeff Ullman, editors Report of an NSF Workshop on the Future of Database Systems Research, May 26--27, 1995 1 1 Introduction In February of 1990, a group of database researchers met to examine the prospects

  4. Aiming for theTop The Wits 21st

    E-Print Network [OSTI]

    Wagner, Stephan

    Change and Sustainability Research Institute 24 Institute for Well-being and Development 28 Contents #12 developing communities and safeguarding the environment. The Global Change and Sustainability Research includes the creation of six prestigious new 21st Century Research Institutes to build on its areas

  5. Between Facebook and JPMorgan, Wall St. woes By PALLAVI GOGOI

    E-Print Network [OSTI]

    Belogay, Eugene A.

    Between Facebook and JPMorgan, Wall St. woes mount By PALLAVI GOGOI The Associated Press Updated: 5 public offering of Facebook stock last week, which was fumbled by the banks that managed the deal against Facebook and Morgan Stanley, the bank that shepherded the IPO, over reports that it withheld

  6. BEaST: Brain extraction using multiresolution nonlocal segmentation

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    BEaST: Brain extraction using multiresolution nonlocal segmentation Simon F. Eskildsen1 Ă?stergaard2 , D. Louis Collins1 , and the Alzheimer's Disease Neuroimaging Initiative 1 McConnell Brain. Brain extraction is an important step in the analysis of brain images. Variability in brain morphology

  7. Project Summary Title: EFRI-RESIN Proposal, 21st

    E-Print Network [OSTI]

    Vaswani, Namrata

    ) Summary: Most US energy usage is for electricity production and vehicle transportation, two interdependentProject Summary Title: EFRI-RESIN Proposal, 21st Century National Energy and Transportation prominent. There are several new energy supply technologies reaching maturity, accelerated by public concern

  8. Essays on Extended Service Contracts May 1st, 2008

    E-Print Network [OSTI]

    Sadeh, Norman M.

    1 Essays on Extended Service Contracts Tao Chen Defense May 1st, 2008 #12;2 Abstract Extended service contracts have been the major profit generator for many consumer electronics retailers of extended service contracts and how the ESC purchase decisions are related to the product purchase decisions

  9. June 24-26, 2008 1st International Conference on

    E-Print Network [OSTI]

    June 24-26, 2008 ETH Zurich 1st International Conference on Machine Control & Guidance #12;June 24-26, 2008 ETH Zurich · 1855 founded · 383 Professors · 21 Nobelprizes · 13000 Students · Bachelor/Master/Doctorate School Main Building of ETH ZurichHönggerberg Campus ETH Zurich #12;June 24-26, 2008 ETH Zurich Science

  10. Proceedings of the 1st Annual Gas Processing Symposium

    E-Print Network [OSTI]

    Skogestad, Sigurd

    energy calculations for directly coupled arrangements. Here we give a brief review of the most importantProceedings of the 1st Annual Gas Processing Symposium H. Alfadala, G.V. Rex Reklaitis and M.M. El-Halwagi (Editors) © 2009 Elsevier B.V. All rights reserved. Minimum Energy Operation of Petlyuk Distillation

  11. FEASIBILITY STUDY FOR THE ST. LOUIS NORTH COUNTY SITE

    E-Print Network [OSTI]

    US Army Corps of Engineers

    Study St. Louis North County Site ­ FUSRAP Final May 1, 2003 ii TABLE OF CONTENTS VOLUME I LIST.1.2 Summary of FUSRAP-Authorized Materials at North County Sites ............2-2 2.2 PHYSICAL CHARACTERISTICS-6 2.2.1.3 Description of Latty Avenue Properties .........................................2-8 2

  12. Summary of Activities at the ST LOUIS NORTH COUNTY SITE

    E-Print Network [OSTI]

    US Army Corps of Engineers

    the SLAPS and Latty Avenue Vicinity Properties (VPs). Today these sites, including impacted areas along) 260-3905 Or write St. Louis District, Corps of Engineers FUSRAP Project Office 8945 Latty Avenue were purchased, moved, and stored at a property on Latty Avenue, which became known as the Hazelwood

  13. Farm Business Management for the 21st Century Purdue Extension

    E-Print Network [OSTI]

    Farm Business Management for the 21st Century Purdue Extension West Lafayette, IN 47907 The Internal Analysis of Your Farm Business: What Is Your Farms Competitive Advantage? PURDUE EXTENSION EC-721 University Assessing the strengths and weaknesses of your farm business will help you iden- tify those

  14. Farm Business Management for the 21st Century Purdue Extension

    E-Print Network [OSTI]

    Farm Business Management for the 21st Century Purdue Extension West Lafayette, IN 47907 Developing at the underlying purpose for which the business exists: its vision and mission. An important key to any successful planned vacation or like the initiation of a new business enterprise or restructuring of an existing

  15. The University of St Andrews Student Services Strategy

    E-Print Network [OSTI]

    Brierley, Andrew

    -2017 In response to demand and the developing expectations of students and staff at the University of St Andrews staff and embedded in all our staff/student interactions. These values and beliefs dominate our practice fundamentally what is best for them and their views are to be respected; others should not assume they know best

  16. St Andrews Recycling Points Recycling Points are situated locally to

    E-Print Network [OSTI]

    St Andrews, University of

    St Andrews Recycling Points Recycling Points are situated locally to allow you to recycle the following materials: To find your nearest Recycling Point please visit www.fifedirect.org.uk/wasteaware or call the Recycling Helpline on 08451 55 00 22. R&A GOLF CLUB OLD COURSE HOTEL UNIVERSITY NORTH HAUGH

  17. Missouri S&T Residential College Learning Community

    E-Print Network [OSTI]

    Missouri-Rolla, University of

    Missouri S&T Residential College Learning Community (Revised) Special Programs Request May 20, 2008.5 credit hour courses associated with the Residential College Learning Communities. The Office of Undergraduate Studies will collaboratively share responsibility with Residential Life for each course

  18. 14 UD Tank Opening Report July 31st

    E-Print Network [OSTI]

    Chen, Ying

    14 UD Tank Opening Report #123 8th July ­ 31st July 2014 Team leader N. Lobanov Report compiled by P. Linardakis, G. Crook, J, Heighway, N. Lobanov Tank crew G. Crook, J. Heighway, P. Linardakis, N 2 3 Contents 1 Reason for tank opening

  19. Boise Inc. St. Helens Paper Mill Achieves Significant Fuel Savings

    SciTech Connect (OSTI)

    Not Available

    2008-05-01T23:59:59.000Z

    This case study describes how the Boise Inc. paper mill in St. Helens, Oregon, achieved annual savings of approximately 154,000 MMBtu and more than $1 million after receiving a DOE Save Energy Now energy assessment and implementing recommendations to improve the efficiency of its steam system.

  20. Transient ST-Segment Episode Detection for ECG Beat Classification

    E-Print Network [OSTI]

    Ng, Vincent

    Transient ST-Segment Episode Detection for ECG Beat Classification Suma C. Bulusu, Miad Faezipour on the application of signal processing and artificial intelligence to the heart signal known as the ECG. The Electrocardiogram (ECG) is an electrical recording of the heart behavior and is crucial to investigating cardiac

  1. GLOBAL STRATEGY FOR HIGHER EDUCATION IN THE 21ST Indo-US Consortium of Universities

    E-Print Network [OSTI]

    Pradhan, Anil

    and the Aligarh Muslim University launched under the Obama-Singh 21st Century Knowledge Initiative. One of its of Universities Obama-Singh 21st Century Knowledge Initiative A Proposal for Training Science

  2. European Congress on Social Insects St. Petersburg, Russia, 2227 August 2005

    E-Print Network [OSTI]

    Rasmont, Pierre

    3rd European Congress on Social Insects St. Petersburg, Russia, 22­27 August 2005 PROCEEDINGS #12, Russia, 22­27 August 2005 PROCEEDINGS Edited by Vladilen E. Kipyatkov St. Petersburg 2005 #12;3 Table

  3. E-Print Network 3.0 - acute non-st segment Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    cular care for elderly patients with non-ST-segment elevation acute coronary... , Armstrong PW, et al. Acute coronary care in the elderly, part II: ST-segment-elevation...

  4. E-Print Network 3.0 - acute st-segment elevation Sample Search...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Impact of age on treatment and outcomes in ST-elevation myocardial infarction Summary: , Armstrong PW, et al. Acute coronary care in the elderly, part II: ST-segment-elevation...

  5. Creating the Clean Energy Jobs of the 21st Century | Department...

    Broader source: Energy.gov (indexed) [DOE]

    Creating the Clean Energy Jobs of the 21st Century Creating the Clean Energy Jobs of the 21st Century Fact Sheet on clean energy jobs in Nevada Creating the Clean Energy Jobs of...

  6. Wind Power Opportunities in St. Thomas, USVI: A Site-Specific...

    Energy Savers [EERE]

    Wind Power Opportunities in St. Thomas, USVI: A Site-Specific Evaluation and Analysis Wind Power Opportunities in St. Thomas, USVI: A Site-Specific Evaluation and Analysis Utilizes...

  7. EECBG Success Story: St. Paul Parking Ramp Serves as a Model...

    Energy Savers [EERE]

    St. Paul Parking Ramp Serves as a Model for Sustainability EECBG Success Story: St. Paul Parking Ramp Serves as a Model for Sustainability April 17, 2014 - 2:10pm Addthis Upgrades...

  8. Proceedings of 4th Fire Behavior and Fuels Conference, July 1 4, 2013, St. Petersburg, Russia

    E-Print Network [OSTI]

    Proceedings of 4th Fire Behavior and Fuels Conference, July 1 ­ 4, 2013, St. Petersburg, Russia Fire Behavior and Fuels Conference, July 1 ­ 4, 2013, St. Petersburg, Russia Published

  9. E-Print Network 3.0 - acute st elevation Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    than ST-Segment Deviation Summary: with acute symptoms only ST elevation on the standard ECG is clinically considered to be indicative... the high- frequency method. In 71% of the...

  10. E-Print Network 3.0 - acute st-elevation myocardial Sample Search...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    than ST-Segment Deviation Summary: with acute symptoms only ST elevation on the standard ECG is clinically considered to be indicative... have shown decreased HF-QRS in the...

  11. s.t F E V, (V \\F) E B, m(B\\A) = 0

    E-Print Network [OSTI]

    Ishii, Hitoshi

    Rk : k- (Cc(Rk ) ) 1 X M µ (a) E M > 0, F : , V : s.t F E V, µ(V \\F) E M A : F , B : G s.t A E B, m(B\\A) = 0 2 X s.t (K) ) : a Pn} Rk (= ) box( n=1 n) [Rk ] Rk - M M m (a) M E M A : F, B : G s.t A E B, m(B\\A) = 0 (b) m

  12. Urban League of St. Louis Ramps Up Weatherization Production and Hiring

    Broader source: Energy.gov [DOE]

    Why some residents in St. Louis are doing a double take when looking at the savings on their energy bills.

  13. Environmental Assessment on the leasing of the Strategic Petroleum Reserve, St. James Terminal, St. James Parish, Louisiana

    SciTech Connect (OSTI)

    NONE

    1995-01-01T23:59:59.000Z

    The US Department of Energy (DOE) proposes to lease the Strategic Petroleum Reserve`s (SPR) St. James Terminal to private industry. The St. James Terminal consists of six storage tanks, a pumping station, two maine docks and ancillary facilities. DOE believes that the St. James Terminal presents an opportunity to establish a government- industry arrangement that could more effectively use this asset to serve the nations`s oil distribution needs, reduce the operational cost of the SPR, and provide a source of revenue for the Government. DOE solicited interest in leasing its distribution facilities in a notice published March 16, 1994. In response, industry has expressed interest in leasing the St. James Terminal, as well as several DOE pipelines, to enhance the operation of its own facilities or to avoid having to construct new ones. Under such a lease, industry use would be subordinate to DOE use in the event of a national energy emergency. This Environmental Assessment describes the proposed leasing operation, its alternatives, and potential environmental impacts. Based on this analyses, DOE has determined that the proposed action is not a major Federal action significantly affecting the quality of the human environment within the meaning of the National Environmental Policy Act (NEPA) OF 1969 and has issued the Finding of No Significant Impact (FONSI).

  14. Hydrothermal synthesis and thermoelectric properties of nanostructured Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} compounds

    SciTech Connect (OSTI)

    Zhang, Yanhua [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China) [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China); Academy of Equipment Command and Technology, Beijing 102249 (China); Xu, Guiying [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China)] [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China); Mi, Jianli [Department of Chemistry and iNANO, Aarhus University, Langelandsgade 140, DK-8000 Aarhus (Denmark)] [Department of Chemistry and iNANO, Aarhus University, Langelandsgade 140, DK-8000 Aarhus (Denmark); Han, Fei; Wang, Ze [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China)] [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China); Ge, Changchun, E-mail: ccge@mater.ustb.edu.cn [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China)] [Institute of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, No. 30, Xueyuan Road, Beijing 100083 (China)

    2011-05-15T23:59:59.000Z

    Research highlights: {yields} Single-phase Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} powders have been synthesized by a hydrothermal route. {yields} Hexagonal Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} naosheets due to the anisotropic growth of the crystals. {yields} The temperature gradients lead to directional arrangement nanosheet-agglomerates. {yields} Nanosheet-agglomerates are beneficial for improving the TE property of products. {yields} A maximum figure of merit of 0.86 is achieved at about 100 {sup o}C. -- Abstract: Single-phase Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} compounds have been prepared by hydrothermal synthesis at 150 {sup o}C for 24 h using SbCl{sub 3}, BiCl{sub 3} and tellurium powder as precursors. X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) have been applied to analyze the phase distributions, microstructures and grain sizes of the as-grown Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} products. It is found that the hydrothermally synthesized Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} nanopowders have a morphology dominated by irregular hexagonal sheets due to the anisotropic growth of the crystals. The Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} nanosheets are parallelly stacked in certain direction to form sheet-agglomerates attribute to the temperature gradients in the solution.

  15. ESA's Programme of Exploration 1st June Aurora Industry Day 1

    E-Print Network [OSTI]

    ESA's Programme of Exploration 1st June Aurora Industry Day 1 Aurora Core Programme Approach Proposed for Mars Sample Return Preparation Aurora Industry Day ­ 1st June 2006 A. PRADIER #12;ESA's Programme of Exploration 1st June Aurora Industry Day 2 OVERALL MSR CONTEXT MARS SAMPLE RETURN Represents

  16. de Haas{endash}van Alphen and Shubnikov{endash}de Haas oscillations in RAgSb{sub 2} (R=Y, La-Nd, Sm)

    SciTech Connect (OSTI)

    Myers, K.D.; Budko, S.L.; Antropov, V.P.; Harmon, B.N.; Canfield, P.C. [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)] [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States); Lacerda, A.H. [National High Field Laboratory, Los Alamos Facility, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [National High Field Laboratory, Los Alamos Facility, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    1999-11-01T23:59:59.000Z

    de Haas{endash}van Alphen and Shubnikov{endash}de Haas oscillations have been used to study the Fermi surface of the simple tetragonal RAgSb{sub 2} series of compounds with R=Y, La-Nd, and Sm. The high quality of the flux-grown single crystals, coupled with very small extremal cross sections of Fermi surface, allow the observation of quantum oscillations at modest fields (H{lt}30&hthinsp;kG) and high temperatures (up to 25 K in SmAgSb{sub 2}). For H{parallel}c, the effective masses, determined from the temperature dependence of the amplitudes, are quite small, typically between 0.07 and 0.5m{sub 0}. The topology of the Fermi surface was determined from the angular dependence of the frequencies for R=Y, La, and Sm. In SmAgSb{sub 2}, antiferromagnetic ordering below 8.8 K is shown to dramatically alter the Fermi surface. For LaAgSb{sub 2} and CeAgSb{sub 2}, the effect of applied hydrostatic pressure on the frequencies was also studied. Finally, the experimental data were compared to the Fermi surface calculated within the tight-binding linear muffin-tin orbital approximation. Overall, the calculated electronic structure was found to be consistent with the experimental data. {copyright} {ital 1999} {ital The American Physical Society}

  17. de Haas[endash]van Alphen and Shubnikov[endash]de Haas oscillations in RAgSb[sub 2] (R=Y, La-Nd, Sm)

    SciTech Connect (OSTI)

    Myers, K.D.; Budko, S.L.; Antropov, V.P.; Harmon, B.N.; Canfield, P.C. (Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)); Lacerda, A.H. (National High Field Laboratory, Los Alamos Facility, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States))

    1999-11-01T23:59:59.000Z

    de Haas[endash]van Alphen and Shubnikov[endash]de Haas oscillations have been used to study the Fermi surface of the simple tetragonal RAgSb[sub 2] series of compounds with R=Y, La-Nd, and Sm. The high quality of the flux-grown single crystals, coupled with very small extremal cross sections of Fermi surface, allow the observation of quantum oscillations at modest fields (H[lt]30 hthinsp;kG) and high temperatures (up to 25 K in SmAgSb[sub 2]). For H[parallel]c, the effective masses, determined from the temperature dependence of the amplitudes, are quite small, typically between 0.07 and 0.5m[sub 0]. The topology of the Fermi surface was determined from the angular dependence of the frequencies for R=Y, La, and Sm. In SmAgSb[sub 2], antiferromagnetic ordering below 8.8 K is shown to dramatically alter the Fermi surface. For LaAgSb[sub 2] and CeAgSb[sub 2], the effect of applied hydrostatic pressure on the frequencies was also studied. Finally, the experimental data were compared to the Fermi surface calculated within the tight-binding linear muffin-tin orbital approximation. Overall, the calculated electronic structure was found to be consistent with the experimental data. [copyright] [ital 1999] [ital The American Physical Society

  18. Highly tunable electron transport in epitaxial topological insulator (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} thin films

    SciTech Connect (OSTI)

    He Xiaoyue; Guan Tong; Wang Xiuxia; Feng Baojie; Cheng Peng; Chen Lan; Li Yongqing; Wu Kehui [Institute of Physics, Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2012-09-17T23:59:59.000Z

    Atomically smooth, single crystalline (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} films have been grown on SrTiO{sub 3}(111) substrates by molecular beam epitaxy. A full range of Sb-Bi compositions have been studied in order to obtain the lowest possible bulk conductivity. For the samples with optimized Sb compositions (x=0.5{+-}0.1), the carrier type can be tuned from n-type to p-type across the whole thickness with the help of a back-gate. Linear magnetoresistance has been observed at gate voltages close to the maximum in the longitudinal resistance of a (Bi{sub 0.5}Sb{sub 0.5}){sub 2}Te{sub 3} sample. These highly tunable (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} thin films provide an excellent platform to explore the intrinsic transport properties of the three-dimensional topological insulators.

  19. The effects of the chemical composition and strain on the electronic properties of GaSb/InAs core-shell nanowires

    SciTech Connect (OSTI)

    Ning, Feng; Wang, Dan; Tang, Li-Ming, E-mail: lmtang@hnu.edu.cn; Zhang, Yong; Chen, Ke-Qiu, E-mail: keqiuchen@hnu.edu.cn [Department of Applied Physics, Hunan University, Changsha 410082 (China)

    2014-09-07T23:59:59.000Z

    The effects of the chemical composition and strain on the electronic properties of [111] zinc-blende (ZB) and [0001] wurtzite (WZ) GaSb/InAs core-shell nanowires (NWs) with different core diameters and shell thicknesses are studied using first-principles methods. The band structures of the [111] ZB GaSb/InAs core-shell NWs underwent a noticeable type-I/II band alignment transition, associated with a direct-to-indirect band gap transition under a compressive uniaxial strain. The band structures of the [0001] WZ GaSb/InAs core-shell NWs preserved the direct band gap under either compressive or tensile uniaxial strains. In addition, the band gaps and the effective masses of the carriers could be tuned by their composition. For the core-shell NWs with a fixed GaSb-core size, the band gaps decreased linearly with an increasing InAs-shell thickness, caused by the significant downshift of the conduction bands. For the [111] ZB GaSb/InAs core-shell NWs, the calculated effective masses indicated that the transport properties could be changed from hole-dominated conduction to electron-dominated conduction by changing the InAs-shell thickness.

  20. Ab initio density functional theory investigation of the structural, electronic and optical properties of Ca{sub 3}Sb{sub 2} in hexagonal and cubic phases

    SciTech Connect (OSTI)

    Arghavani Nia, Borhan, E-mail: b.arghavani@gmail.com [Department of Physics, Kermanshah Branch, Islamic Azad University, Kermanshah (Iran, Islamic Republic of); Sedighi, Matin [Department of Physics, Kermanshah Branch, Islamic Azad University, Kermanshah (Iran, Islamic Republic of); Shahrokhi, Masoud [Young Researchers and Elite Club, Kermanshah Branch, Islamic Azad University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Nano-Science and Nano-Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physics Science Research Laboratory, Department of Nano-Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-1795, Tehran (Iran, Islamic Republic of)

    2013-11-15T23:59:59.000Z

    A density functional theory study of structural, electronical and optical properties of Ca{sub 3}Sb{sub 2} compound in hexagonal and cubic phases is presented. In the exchange–correlation potential, generalized gradient approximation (PBE-GGA) has been used to calculate lattice parameters, bulk modulus, cohesive energy, dielectric function and energy loss spectra. The electronic band structure of this compound has been calculated using the above two approximations as well as another form of PBE-GGA, proposed by Engle and Vosko (EV-GGA). It is found that the hexagonal phase of Ca{sub 3}Sb{sub 2} has an indirect gap in the ??N direction; while in the cubic phase there is a direct-gap at the ? point in the PBE-GGA and EV-GGA. Effects of applying pressure on the band structure of the system studied and optical properties of these systems were calculated. - Graphical abstract: A density functional theory study of structural, electronic and optical properties of Ca{sub 3}Sb{sub 2} compound in hexagonal and cubic phases is presented. Display Omitted - Highlights: • Physical properties of Ca{sub 3}Sb{sub 2} in hexagonal and cubic phases are investigated. • It is found that the hexagonal phase is an indirect gap semiconductor. • Ca{sub 3}Sb{sub 2} is a direct-gap semiconductor at the ? point in the cubic phase. • By increasing pressure the semiconducting band gap and anti-symmetry gap are decreased.

  1. DOE pollution prevention in the 21st century

    SciTech Connect (OSTI)

    NONE

    1996-10-01T23:59:59.000Z

    This document presents abstracts of the topics covered in the DOE Pollution Prevention in the 21st Century conference held July 9-11, 1996. These topics include: model facilities; Federal/NEPA/stake- holders; microchemistry; solvents and reduction; education and outreach; return on investments; energy management; decontamination and decommissioning; planning and regulations; environmental restoration; recycling; affirmative procurement in the executive branch; construction and demolition; materials exchange; and ISO 2000.

  2. DOE pollution prevention in the 21st century. Proceedings

    SciTech Connect (OSTI)

    Not Available

    1996-12-31T23:59:59.000Z

    This CD-ROM contains the proceedings from the DOE Pollution Prevention in the 21st Century Conference XII held July 9-11, 1996. Topics included model facilities, federal and NEPA stakeholders, microchemistry, source 4 solvents and reduction, education and outreach planning, return on investment, energy management, decontamination and decommissioning, planning and regulations, environmental restoration, solid waste, recycling, affirmative procurement in the executive branch, construction and demolition, international and ISO 14000, and poster sessions.

  3. How St. Lucie 2 kept rein on thermal effects

    SciTech Connect (OSTI)

    Stockton, L.E.

    1981-12-01T23:59:59.000Z

    Design and construction of the condenser cooling-water discharge line from St. Lucie 2 nuclear power plant presented problems in the areas of environmental requirements, pipeline fouling from marine growth, and civil engineering. Special design, based in part on model experiments and in part on experience, established conditions for success with the new line. Methods and results are described, which are of interest to systems with similar oceano-discharge conditions.

  4. St. Petersburg Conference on Physics of Neutron Stars, 2001

    E-Print Network [OSTI]

    A. Koptsevich

    2001-06-24T23:59:59.000Z

    The Programme and Abstracts booklet of the sixth Conference on "Physics of Neutron Stars" held at the Ioffe Physical Technical Institute, St. Petersburg, Russia, on June 6 -- 8, 2001 is presented. The abstracts contain references to the web pages, LANL archive and published articles. More information on the Conference can be found at http://www.ioffe.rssi.ru/astro/NS2001/index.html

  5. St. Louis, Missouri: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating SolarElectric Coop, Inc Place: Missouri References: EIASpanishSquare ButteSt Louis,

  6. St. Louis, Missouri: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating SolarElectric Coop, Inc Place: Missouri References: EIASpanishSquare ButteSt

  7. New Jersey's 11st congressional district: Energy Resources | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy ResourcesLoading map...(Utility Company) Jump to: navigation, search Name: NewInformation st

  8. MIT- Center for 21st Century Energy | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 - 429Lacey,(MonasterLowell Point,ECO Auger < MHKHydrodynamics21st Century Energy

  9. City of North St Paul, Minnesota (Utility Company) | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (UtilityHolyrood,Martinsville,Moultrie,NelsonNewInformation St Paul,

  10. City of St George, Utah (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhioOglesby, IllinoisSchulenburg,Spencer Place:St George, Utah (Utility

  11. City of St James, Missouri (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhioOglesby, IllinoisSchulenburg,Spencer Place:St George, Utah

  12. City of St John, Kansas (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhioOglesby, IllinoisSchulenburg,Spencer Place:St George, UtahJohn, Kansas

  13. City of St Louis, Michigan (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhioOglesby, IllinoisSchulenburg,Spencer Place:St George, UtahJohn,

  14. City of St Martinville, Louisiana (Utility Company) | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhioOglesby, IllinoisSchulenburg,Spencer Place:St George,

  15. City of St Marys, Kansas (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhioOglesby, IllinoisSchulenburg,Spencer Place:St George,Marys Place: Kansas

  16. City of St Marys, Ohio (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhioOglesby, IllinoisSchulenburg,Spencer Place:St George,Marys Place:

  17. City of St Robert, Missouri (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhioOglesby, IllinoisSchulenburg,Spencer Place:St George,Marys

  18. St. Louis, Oklahoma: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty Ltd JumpGTZHolland,0162112°,St. Charles is a

  19. Welcome'to'St'Andrews' First'Year'Computer'Science'

    E-Print Network [OSTI]

    St Andrews, University of

    ,'is'a'slang'term'used'to'reference' a'scenario'in'which'a'company'(usually,'a' computer'soQware'company)'uses'its'own' product'since'not'much'changed'each'year '' ­Though%we%did%listen%to%feedback% ­And%improved%in%certain%areas% · We'deduce'that'...' · Computer'to'demonstrate'the'quality'and' capabiliDes'of'the'product."' ­Wikipedia' #12;Dogfood...'' · Graham'Kirby' · BSc'St'Andrews' · Ph

  20. Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

    SciTech Connect (OSTI)

    Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Afonenko, A. A. [Belarussian State University (Belarus)] [Belarussian State University (Belarus); Dikareva, N. V. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Kudryavtsev, K. E.; Morozov, S. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)

    2013-11-15T23:59:59.000Z

    The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

  1. Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices

    SciTech Connect (OSTI)

    Kagan, M. S., E-mail: kagan@cplire.ru; Altukhov, I. V. [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation)] [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation); Baranov, A. N. [Universite Montpellier 2, Institute d'Electronique du Sud (France)] [Universite Montpellier 2, Institute d'Electronique du Sud (France); Il'inskaya, N. D. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Paprotskiy, S. K. [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation)] [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation); Teissier, R. [Universite Montpellier 2, Institute d'Electronique du Sud (France)] [Universite Montpellier 2, Institute d'Electronique du Sud (France); Usikova, A. A. [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation)] [Russian Academy of Sciences, Kotel'nikov Institute of Radio Engineering and Electronics (Russian Federation)

    2013-11-15T23:59:59.000Z

    Vertical transport in short-period InAs/AlSb superlattices with type-II heterojunctions is studied at room temperature. It is found that negative differential conductivity appears in the miniband-conduction mode upon the overlapping of quantum-confined states in a periodic system of quantum wells. In the nonresonant-tunneling mode, equidistant peaks appear on the current-voltage characteristic of these superlattices. These peaks are attributed to the influence of the optical cavity on optical electron transitions in quantum wells (Purcell effect)

  2. Transport properties of partially-filled Ce{sub y}Co{sub 4}Sb{sub 12}

    SciTech Connect (OSTI)

    Uher, C.; Chen, B.; Hu, S.; Morelli, D.T.; Meisner, G.P.

    1997-07-01T23:59:59.000Z

    The authors have investigated the magnetic and transport properties of Ce{sub y}Co{sub 4}Sb{sub 12} filled skutterudites with the filling fraction y {le} 0.1. These compounds are n-type materials that develop a magnetic moment upon the presence of trivalent cerium. Cerium has a strong influence on all transport properties and even in small amounts it drastically reduces the lattice thermal conductivity. The resulting figures of merit are comparable to the values established previously for the p-type filled skutterudites.

  3. Demonstrating 1 nm-oxide-equivalent-thickness HfO{sub 2}/InSb structure with unpinning Fermi level and low gate leakage current density

    SciTech Connect (OSTI)

    Trinh, Hai-Dang [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Lin, Yueh-Chin; Nguyen, Hong-Quan; Luc, Quang-Ho [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Nguyen, Minh-Thuy; Duong, Quoc-Van; Nguyen, Manh-Nghia [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam)] [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Wang, Shin-Yuan [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)] [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China); Yi Chang, Edward [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)

    2013-09-30T23:59:59.000Z

    In this work, the band alignment, interface, and electrical characteristics of HfO{sub 2}/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO{sub 2} layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO{sub 2}/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10{sup ?4} A/cm{sup ?2}. The D{sub it} value of smaller than 10{sup 12} eV{sup ?1}cm{sup ?2} has been obtained using conduction method.

  4. Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

    SciTech Connect (OSTI)

    Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

    2014-01-13T23:59:59.000Z

    In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

  5. Low-temperature transport properties of the mixed-valence semiconductor Ru{sub 0.5}Pd{sub 0.5}Sb{sub 3}

    SciTech Connect (OSTI)

    Nolas, G.S. [Research and Development Division, Marlow Industries, Dallas, Texas 75238 (United States)] [Research and Development Division, Marlow Industries, Dallas, Texas 75238 (United States); Harris, V.G.; Tritt, T.M. [Materials Physics Branch, Naval Research Laboratory, Washington, DC 20375 (United States)] [Materials Physics Branch, Naval Research Laboratory, Washington, DC 20375 (United States); Slack, G.A. [Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)] [Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    1996-12-01T23:59:59.000Z

    We have measured the transport properties of Ru{sub 0.5}Pd{sub 0.5}Sb{sub 3} from 300 down to 4 K and compared them to those of the binary-skutterudite antimonides. In particular, the lattice thermal conductivity of this compound is substantially lower than that of CoSb{sub 3} and IrSb{sub 3}. This is attributed to the mixed-valency of ruthenium in this compound. Using near-edge extended absorption fine structure analysis, it is observed that ruthenium in this compound is in the Ru{sup 4+}- and Ru{sup 2+}-valence states in approximately equal proportions. The potential for thermoelectric applications of this material is also discussed. {copyright} {ital 1996 American Institute of Physics.}

  6. Optimization of InAsSb/InGaAs strained-layer superlattice growth by metal-organic chemical vapor deposition for use in infrared emitters

    SciTech Connect (OSTI)

    Biefeld, R.M.; Baucom, K.C.; Follstaedt, D.M.; Kurtz, S.R.

    1994-08-01T23:59:59.000Z

    We have prepared InAsSb/InGaAs strained-layer superlattices (SLSs) by metal-organic chemical vapor deposition using a variety of growth conditions. Presence of an InGaAsSb interface layer was indicated by x-ray diffraction. This interface effect was minimized by optimizing the purge times, reactant flows, and growth conditions. The optimized growth conditions involved the use of low pressure, short purge times between the growth of the layers, and no reactant flow during the purges. Electron diffraction indicates that CuPt-type compositional ordering occurs in InAs{sub 1{minus}x}Sb{sub x} alloys and SLSs which explains an observed bandgap reduction from previously accepted alloy values.

  7. Anisotropic magnetization and transport properties of RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm)

    SciTech Connect (OSTI)

    Myers, Kenneth D.

    1999-11-08T23:59:59.000Z

    This study of the RAgSb{sub 2} series of compounds arose as part of an investigation of rare earth intermetallic compounds containing antimony with the rare earth in a position with tetragonal point symmetry. Materials with the rare earth in a position with tetragonal point symmetry frequently manifest strong anisotropies and rich complexity in the magnetic properties, and yet are simple enough to analyze. Antimony containing intermetallic compounds commonly possess low carrier densities and have only recently been the subject of study. Large single grain crystals were grown of the RAgSb{sub 2} (R=Y, La-Nd, Sm, Gd-Tm) series of compounds out of a high temperature solution. This method of crystal growth, commonly known as flux growth is a versatile method which takes advantage of the decreasing solubility of the target compound with decreasing temperature. Overall, the results of the crystal growth were impressive with the synthesis of single crystals of LaAgSb{sub 2} approaching one gram. However, the sample yield diminishes as the rare earth elements become smaller and heavier. Consequently, no crystals could be grown with R=Yb or Lu. Furthermore, EuAgSb{sub 2} could not be synthesized, likely due to the divalency of the Eu ion. For most of the RAgSb{sub 2} compounds, strong magnetic anisotropies are created by the crystal electric field splitting of the Hund's rule ground state. This splitting confines the local moments to lie in the basal plane (easy plane) for the majority of the members of the series. Exceptions to this include ErAgSb{sub 2} and TmAgSb{sub 2}, which have moments along the c-axis (easy axis) and CeAgSb{sub 2}, which at intermediate temperatures has an easy plane, but exchange coupling at low temperatures is anisotropic with an easy axis. Additional anisotropy is also observed within the basal plane of DyAgSb{sub 2}, where the moments are restricted to align along one of the {l_angle}110{r_angle} axes. Most of the RAgSb{sub 2} compounds containing magnetic rare earths, antiferromagnetically ordered at low temperatures. The ordering temperatures of these compounds are approximately proportional to the de Gennes factor, which suggests that the RKKY interaction is the dominant exchange interaction between local moments. Although metamagnetic transitions were observed in many members of the series, the series of sharp step-like transitions in DyAgSb{sub 2} are impressive. In this compound, up to 11 different magnetic states are stable depending on the magnitude and direction of the applied field. The saturated magnetization of these states and the critical fields needed to induce a phase transition vary with the direction of the applied field. Through detailed study of the angular dependence of the magnetization and critical fields, the net distribution of magnetic moments was determined for most, of the metamagnetic states. In DyAgSb{sub 2}, the crystal electric field (CEF) splitting of the Hund's rule ground state creates a strong anisotropy where the local Dy{sup 3+} magnetic moments are constrained to one of the equivalent {l_angle}110{r_angle} directions within the basal plane. The four position clock model was introduced to account for this rich metamagnetic system. Within this model, the magnetic moments are constrained to one of four equivalent orientations within the basal plane and interactions are calculated for up third nearest neighbors. The theoretical phase diagram, generated from the coupling constants is in excellent agreement with the experimental phase diagram. Further investigation of this compound using magnetic X-ray or neutron diffraction would be extremely useful to verify the net distributions of moments and determine the wave vectors of each of the ordered states.

  8. Responsiveness summary for the engineering evaluation/cost analysis for decontamination at the St. Louis Downtown Site, St. Louis, Missouri

    SciTech Connect (OSTI)

    Picel, M.H.; Peterson, J.M. (Argonne National Lab., IL (United States)); Williams, M.J. (Bechtel National, Inc., Oak Ridge, TN (United States))

    1991-12-01T23:59:59.000Z

    The US Department of Energy (DOE) is responsible for conducting remedial actions at the Mallinckrodt Chemical Plant, also referred to as the St. Louis Downtown Site (SLDS), located in the city of St. Louis, Missouri. Remedial activities at the SLDS are being carried out under DOE's Formerly Utilized Sites Remedial Action Program (FUSRAP) as part of the overall cleanup planned for three noncontiguous areas in St. Louis, which are collectively referred to as the St. Louis Site. Potential response action alternatives for managing the contaminated material generated at the SLDS have been evaluated in accordance with US Environmental Protection Agency (EPA) guidance for conducting interim actions under the Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA), as amended. An engineering evaluation/cost analysis (EE/CA) report was prepared to document this process. On the basis of the analysis presented in the EE/CA, the preferred alternative for the management of contaminated wastes generated by DOE-supported plant activities is the provision of temporary storage capacity, which can be made available by modifying an existing building (i.e., Building 116) at SLDS. This alternative would enable DOE and Mallinckrodt to coordinate efforts to prevent the uncontrolled relocation of contamination and ensure that ultimate site cleanup objectives are not complicated by plant activities implemented by Mallinckrodt. The EE/CA, dated May 1991, was issued to the general public on June 7, 1991, and a public comment period was held from June 7 through July 10, 1991, in accordance with the public participation process identified in CERCLA. Comments on the proposed action were received in writing from the Missouri Department of Health, private citizen Kay Drey, and the EPA Region 7. This responsiveness summary has been prepared to respond to issues identified in these comment letters on the proposed action.

  9. Responsiveness summary for the engineering evaluation/cost analysis for decontamination at the St. Louis Downtown Site, St. Louis, Missouri

    SciTech Connect (OSTI)

    Picel, M.H.; Peterson, J.M. [Argonne National Lab., IL (United States); Williams, M.J. [Bechtel National, Inc., Oak Ridge, TN (United States)

    1991-12-01T23:59:59.000Z

    The US Department of Energy (DOE) is responsible for conducting remedial actions at the Mallinckrodt Chemical Plant, also referred to as the St. Louis Downtown Site (SLDS), located in the city of St. Louis, Missouri. Remedial activities at the SLDS are being carried out under DOE`s Formerly Utilized Sites Remedial Action Program (FUSRAP) as part of the overall cleanup planned for three noncontiguous areas in St. Louis, which are collectively referred to as the St. Louis Site. Potential response action alternatives for managing the contaminated material generated at the SLDS have been evaluated in accordance with US Environmental Protection Agency (EPA) guidance for conducting interim actions under the Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA), as amended. An engineering evaluation/cost analysis (EE/CA) report was prepared to document this process. On the basis of the analysis presented in the EE/CA, the preferred alternative for the management of contaminated wastes generated by DOE-supported plant activities is the provision of temporary storage capacity, which can be made available by modifying an existing building (i.e., Building 116) at SLDS. This alternative would enable DOE and Mallinckrodt to coordinate efforts to prevent the uncontrolled relocation of contamination and ensure that ultimate site cleanup objectives are not complicated by plant activities implemented by Mallinckrodt. The EE/CA, dated May 1991, was issued to the general public on June 7, 1991, and a public comment period was held from June 7 through July 10, 1991, in accordance with the public participation process identified in CERCLA. Comments on the proposed action were received in writing from the Missouri Department of Health, private citizen Kay Drey, and the EPA Region 7. This responsiveness summary has been prepared to respond to issues identified in these comment letters on the proposed action.

  10. Informat ion for Graduat e St udent s and Advisors of Graduat e St udent s 2013-2014 Information for Graduate Students

    E-Print Network [OSTI]

    Minnesota, University of

    Informat ion for Graduat e St udent s and Advisors of Graduat e St udent s 2013-2014 1 Information for Graduate Students and Advisors of Graduate Students Graduate Program in Computer Science University science graduate students and their advisors. Its users are expected to be familiar with the contents

  11. Nanoscale -structural domains in the phonon-glass thermoelectric material -Zn4Sb3 H. J. Kim,1 E. S. Bozin,1 S. M. Haile,2 G. J. Snyder,2 and S. J. L. Billinge1,

    E-Print Network [OSTI]

    Nanoscale -structural domains in the phonon-glass thermoelectric material -Zn4Sb3 H. J. Kim,1 E. S April 2007 A study of the local atomic structure of the promising thermoelectric material -Zn4Sb3, using Thermoelectric materials allow for direct conversion of heat into electrical energy and vice versa. They hold

  12. Synthesis, structure and magnetic properties of La{sub 3}Co{sub 2}SbO{sub 9}: A double perovskite with competing antiferromagnetic and ferromagnetic interactions

    SciTech Connect (OSTI)

    Franco, D.G.; Fuertes, V.C.; Blanco, M.C. [INFIQC (CONICET), Departamento de Fisicoquimica, Facultad de Ciencias Quimicas, Universidad Nacional de Cordoba, Ciudad Universitaria, X5000HUA Cordoba (Argentina)] [INFIQC (CONICET), Departamento de Fisicoquimica, Facultad de Ciencias Quimicas, Universidad Nacional de Cordoba, Ciudad Universitaria, X5000HUA Cordoba (Argentina); Fernandez-Diaz, M.T. [Institute Laue-Langevin (ILL) 156X, F-38042 Grenoble Cedex 9 (France)] [Institute Laue-Langevin (ILL) 156X, F-38042 Grenoble Cedex 9 (France); Sanchez, R.D., E-mail: rodo@cab.cnea.gov.ar [Centro Atomico Bariloche, CNEA and Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 Rio Negro (Argentina); Carbonio, R.E., E-mail: carbonio@fcq.unc.edu.ar [INFIQC (CONICET), Departamento de Fisicoquimica, Facultad de Ciencias Quimicas, Universidad Nacional de Cordoba, Ciudad Universitaria, X5000HUA Cordoba (Argentina)

    2012-10-15T23:59:59.000Z

    The synthesis, structural characterization, and magnetic properties of La{sub 3}Co{sub 2}SbO{sub 9} double perovskite are reported. The crystal structure has been refined by X-ray and neutron powder diffraction data in the monoclinic space group P2{sub 1}/n. Co{sup 2+} and Sb{sup 5+} have the maximum order allowed for the La{sub 3}Co{sub 2}SbO{sub 9} stoichiometry. Rietveld refinements of powder neutron diffraction data show that at room temperature the cell parameters are a=5.6274(2) A, b=5.6842(2) A, c=7.9748(2) A and {beta}=89.999(3) Degree-Sign . Magnetization measurements indicate the presence of ferromagnetic correlations with T{sub C}=55 K attributed to the exchange interactions for non-linear Co{sup 2+}-O-Sb{sup 5+}-O-Co{sup 2+} paths. The effective magnetic moment obtained experimentally is {mu}{sub exp}=4.38 {mu}{sub B} (per mol Co{sup 2+}), between the theoretical one for spin only (3.87 {mu}{sub B}) and spin-orbit value (6.63 {mu}{sub B}), indicating partially unquenched contribution. The low magnetization value at high magnetic field and low temperature (1 {mu}{sub B}/f.u., 5 T and 5 K) and the difference between ZFC and FC magnetization curves (at 5 kOe) indicate that the ferromagnetism do not reach a long range order and that the material has an important magnetic frustration. - Graphical abstract: Co-O-Co (Yellow octahedra only) rich zones (antiferromagnetic) are in contact with Co-O-Sb-O-Co (Red and yellow octahedra) rich zones (Ferromagnetic) to give the peculiar magnetic properties, as a consequence, a complex hysteresis loop can be observed composed by a main and irreversible curve in all the measured range, superimposed with a ferromagnetic component at low fields. Highlights: Black-Right-Pointing-Pointer La{sub 3}Co{sub 2}SbO{sub 9} has small Goldschmidt Tolerance Factor (t) due to the small size of La{sup 3+}. Black-Right-Pointing-Pointer Small t determines an angle for the path Co{sup 2+}-O-Sb{sup 5+}-O-Co{sup 2+} of 153 Degree-Sign . Black-Right-Pointing-Pointer Ferromagnetism is attributed to exchange interactions for Co{sup 2+}-O-Sb{sup 5+}-O-Co{sup 2+} paths. Black-Right-Pointing-Pointer Ferromagnetic nanoclusters are embedded in an antiferromagnetic matrix.

  13. Study of a 1?eV GaNAsSb photovoltaic cell grown on a silicon substrate

    SciTech Connect (OSTI)

    Tan, K. H.; Loke, W. K.; Wicaksono, S.; Li, D.; Leong, Y. R.; Yoon, S. F. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)] [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sharma, P.; Milakovich, T.; Bulsara, M. T.; Fitzgerald, E. A. [Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)] [Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)

    2014-03-10T23:59:59.000Z

    We report the performance of a 1?eV GaNAsSb photovoltaic cell grown on a Si substrate with a SiGe graded buffer grown using molecular beam epitaxy. For comparison, the performance of a similar 1?eV GaN{sub 0.018}As{sub 0.897}Sb{sub 0.085} photovoltaic cell grown on a GaAs substrate was also reported. Both devices were in situ annealed at 700?°C for 5?min, and a significant performance improvement over our previous result was observed. The device on the GaAs substrate showed a low open circuit voltage (V{sub OC}) of 0.42?V and a short circuit current density (J{sub SC}) of 23.4?mA/cm{sup 2} while the device on the Si substrate showed a V{sub OC} of 0.39?V and a J{sub SC} of 21.3?mA/cm{sup 2}. Both devices delivered a quantum efficiency of 50%–55% without any anti-reflection coating.

  14. Crystal and magnetic study of the disordered perovskites Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3} and Ca(Fe{sub 0.5}Sb{sub 0.5})O{sub 3}

    SciTech Connect (OSTI)

    Retuerto, M., E-mail: mretuerto@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain); Martinez-Lope, M.J.; Garcia-Hernandez, M. [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain)] [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain); Munoz, A. [Departamento de Fisica Aplicada, EPS, Universidad Carlos III, Avda. Universidad 30, E-28911 Leganes-Madrid (Spain)] [Departamento de Fisica Aplicada, EPS, Universidad Carlos III, Avda. Universidad 30, E-28911 Leganes-Madrid (Spain); Fernandez-Diaz, M.T. [Institut Max Von Laue Paul Langevin, F-38042 Grenoble (France)] [Institut Max Von Laue Paul Langevin, F-38042 Grenoble (France); Alonso, J.A. [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain)] [Instituto de Ciencia de Materiales de Madrid, CSIC, Energia, Medio Ambiente y Tecnologias Sostenibles, Sor Juana Ines de la Cruz 3, Cantoblanco, E-28049 Madrid (Spain)

    2010-10-15T23:59:59.000Z

    We have investigated the double perovskites Ca{sub 2}MSbO{sub 6} (M = Mn, Fe) that have been prepared by solid-state reaction (M = Fe) and wet chemistry procedures (M = Mn). The crystal and magnetic structures have been studied from X-ray (XRD) and neutron powder diffraction (NPD) data. Rietveld refinements show that the crystal structures are orthorhombic (space group Pbnm) with complete disorder of M and Sb cations, so the formula should be rewritten as Ca(M{sub 0.5}Sb{sub 0.5})O{sub 3}. Due to this disorder no evidences of Jahn-Teller distortion can be observed in the MnO{sub 6} octahedra of Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3}, in contrast with the ordered double perovskite Sr{sub 2}MnSbO{sub 6}. Ca(Fe{sub 0.5}Sb{sub 0.5})O{sub 3} behaves as an antiferromagnet with an ordered magnetic moment for Fe{sup 3+} of 1.53(4){mu}{sub B} and a propagation vector k = 0, as investigated by low-temperature NPD. The antiferromagnetic ordering is a result of the high degree of Fe/Sb anti-site disorder of the sample, which originates the spontaneous formation of Fe-rich islands, characterized by the presence of strong Fe-O-Fe antiferromagnetic couplings with enough long-range coherence to produce a magnetic contribution perceptible by NPD. By contrast, the magnetic structure of Ca(Mn{sub 0.5}Sb{sub 0.5})O{sub 3} cannot be observed by low-temperature NPD because the magnitude of the ordered magnetic moments is below the detection threshold for neutrons.

  15. Vapor explosion in the RIA-ST-4 experiment. [BWR

    SciTech Connect (OSTI)

    El-Genk, M.S.

    1980-01-01T23:59:59.000Z

    A concern in assuring the safety of commercial light water reactors (LWRs) is whether core overheating, during which molten fuel is produced, can lead to massive vaporization of the coolant and shock pressurization of the system due to an energetic molten fuel-coolant interaction (MFCI). The RIA-ST-4 experiment was one of four scoping tests in the Reactivity Initiated Accident (RIA) Test Series which is being conducted in the Power Burst Facility (PBF) to define an energy deposition failure threshold and to determine modes and consequences of fuel rod failure during a postulated boiling water reactor (BWR) control rod drop accident.

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  20. Annual Energy Outlook 2015 1st Coal Working Group

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  2. St. Marys, Ohio: Energy Resources | Open Energy Information

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    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty Ltd JumpGTZHolland,0162112°,St. Charles is aOhio: Energy

  3. St. Michaels, Arizona: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty Ltd JumpGTZHolland,0162112°,St. Charles is aOhio: EnergyMichaels, Arizona:

  4. St. Nazianz, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty Ltd JumpGTZHolland,0162112°,St. Charles is aOhio: EnergyMichaels,

  5. St. Tammany Parish, Louisiana: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty Ltd JumpGTZHolland,0162112°,St. Charles is aOhio: EnergyMichaels,Tammany

  6. EnergyPlusDeST DOE-2.1E Building energy modeling programs comparison

    E-Print Network [OSTI]

    4 EnergyPlus DeST 4 #12; 4 4.1 CAVVAV ASHRAE Standard 90.1-2004 EnergyPlus DeST #12; 1 IEA BESTest ASHRAE Standard 140[1] [2] 1 EnergyPlus, DeST, DOE-2, ESP, BLAST TRNSYS 1 ASHRAE RP865[1] 2ANSI/ASHRAE Standard 140 [4] 3 IEA SHC BESTest / [5] EnergyPlus [6] [7

  7. The 1st Joint International Conference on Multibody System Dynamics May 2527, 2010, Lappeenranta, Finland

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    The 1st Joint International Conference on Multibody System Dynamics May 25­27, 2010, Lappeenrantast Joint International Conference on Multibody System Dynamics (IMSD'10)., Lappeenranta : Finland

  8. Microsoft Word - DOE-ID-12-029 Missouri ST.doc

    Broader source: Energy.gov (indexed) [DOE]

    9 SECTION A. Project Title: Infrastructure Upgrade of Radiation Measurement and Spectroscopy Laboratory at Missouri S&T SECTION B. Project Description The infrastructure upgrade at...

  9. Looking Ahead - Biofuels, H2, & Vehicles: 21st Industry Growth Forum

    SciTech Connect (OSTI)

    Gardner, D.

    2008-10-28T23:59:59.000Z

    This presentation on the future of biofuels, hydrogen, and hybrid vehicles was presented at NREL's 21st Industry Growth Forum in Denver, Colorado, on October 28, 2008.

  10. E-Print Network 3.0 - ambulatory recorded st Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 4 5 > >> 1 Biennial Conference of the Society for Ambulatory Assessment Greifswald, Germany Summary: 1st Biennial Conference of the Society for Ambulatory Assessment Greifswald,...

  11. E-Print Network 3.0 - altona bay st Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Qualification as merchant sailor, Staatliche Gewerbeschule 7, Hamburg-St. Pauli, Germany, 1985. CTA... Qualification as chemistry lab assistant, Gymnasium Altona and...

  12. Degree Year Name Position Organization Location 1997 Andrew Hall Research Director Siemens St. Louis

    E-Print Network [OSTI]

    Stormo, Gary

    Degree Year Name Position Organization Location 1997 Andrew Hall Research Director Siemens St Hongyu An Faculty UNC Chapel Hill, NC 2001 Randolph Setser Manager Research CollaborationsSiemens

  13. 1st Semi-Annual Report to Congress on Appliance Energy-Efficiency...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Congress on Appliance Energy-Efficiency Rulemakings - Implementation Report: Energy Conservation Standards Activities 1st Semi-Annual Report to Congress on Appliance...

  14. C-340 ST-90 Boxes Solid Waste Management Unit (SWMU) Assessment...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    WASTE DESCRIPTION: Along with non-RCRA regulated wastes, one ST-90 contained two incandescent light bulbs. The low-level waste (LLW) previously stored included paper, plastic,...

  15. ST JOURNAL OF RESEARCH -VOLUME 2 -NUMBER 1 -NETWORKED MULTIMEDIA 4 COPYRIGHT LEONARD KLEINROCK, 2005

    E-Print Network [OSTI]

    Kleinrock, Leonard

    ST JOURNAL OF RESEARCH - VOLUME 2 - NUMBER 1 - NETWORKED MULTIMEDIA 4 COPYRIGHT © LEONARD KLEINROCK, 2005 Leonard Kleinrock Computer Science Department - University of California, Los Angeles A VISION

  16. Haaren Hall North Hall WestportNew Building BMW 54th St. Annex Getting Around

    E-Print Network [OSTI]

    Rosen, Jay

    Haaren Hall North Hall WestportNew Building BMW 54th St. Annex Getting Around 4th Edition September . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BMW · Floor 6

  17. E-Print Network 3.0 - anterior st-segment elevation Sample Search...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of Utah Collection: Biology and Medicine ; Engineering 8 Sudden Cardiac Arrest: ECG Repolarization after Resuscitation Summary: elevation nor ERep Group 2: ST segment...

  18. Zintl Phases as Thermoelectric Materials: Tuned Transport Properties of the Compounds CaxYb1xZn2Sb2**

    E-Print Network [OSTI]

    Zintl Phases as Thermoelectric Materials: Tuned Transport Properties of the Compounds CaxYb1±xZn2Sb. Introduction Because of their ability to convert waste heat into electricity, thermoelectric materials have in efficiency, thermoelectric materials could pro- vide a substantial amount of electrical power from automotive

  19. Thermoelectric Properties of n-type Polycrystalline BixSb2-xTe3 Alloys N. Gerovac, G. J. Snyder, and T. Caillat

    E-Print Network [OSTI]

    . Introduction The best thermoelectric materials are semiconductors which limit the movement of heat conducting. The quality of a thermoelectric material is described by a dimensionless figure-of-merit, ZT, which depends thermoelectric materials have been made from (Bi,Sb)2Te3 compounds. In polycrystalline form, meaning made up

  20. Proceedings of the MRS Spring Meeting, San Francisco, March 1997, Symposium Q -Thermoelectrics, in press (1997) THERMAL CONDUCTIVITY OF Zn4-xCdxSb3 SOLID SOLUTIONS

    E-Print Network [OSTI]

    performance p-type thermoelectric material with a maximum dimensionless thermoelectric figure of merit ZT of 1.4 at a temperature of 673K. A usual approach, used for many state-of-the-art thermoelectric materials, to further performance p-type material [1,2]. -Zn4Sb3 has interesting thermoelectric properties in the 473-673K

  1. Analytical electron microscopy investigation of elemental composition and bonding structure at the Sb-doped Ni-fully-silicide/SiO{sub 2} interface

    SciTech Connect (OSTI)

    Kawasaki, Naohiko; Sugiyama, Naoyuki; Otsuka, Yuji; Hashimoto, Hideki [Morphological Research Laboratory, Toray Research Center Inc., Otsu, Shiga (Japan); Kurata, Hiroki; Isoda, Seiji [Institute for Chemical Research, Kyoto University, Uji, Kyoto (Japan)

    2011-03-15T23:59:59.000Z

    It is very important to control the elemental composition and bonding structure at the gate electrode/gate dielectrics interface in metal-oxide-semiconductor transistor devices because this determines the threshold voltage of the gate electrode. In this study, we investigated the structure at the interface between the antimony (Sb)-doped nickel-fully-silicide gate electrode and SiO{sub 2} dielectrics by employing high-spatial resolution techniques such as energy dispersive x-ray spectroscopy and electron energy-loss spectroscopy using a scanning transmission electron microscope. In one region, we found a thin nickel layer at the NiSi/SiO{sub 2} interface originating from the migration of native oxide at the face of the poly-silicon. In another region, a Sb pileup was detected at the NiSi/SiO{sub 2} interface where the Ni L{sub 3}-edge spectrum showed Ni-Sb bonding, then it was suggested that Sb atoms exist at the bottom of NiSi, substituting for Si atoms in NiSi.

  2. Strong Coupling between 4f Valence Instability and 3d Ferromagnetism in YbxFe4Sb12 Studied by Resonant X-Ray Emission Spectroscopy

    E-Print Network [OSTI]

    Lin, Jung-Fu "Afu"

    electrons tends to stabilize magnetic ordered states. Permanent ferromagnets, such as Nd-Fe-B and SmStrong Coupling between 4f Valence Instability and 3d Ferromagnetism in YbxFe4Sb12 Studied valence is independent of temperature. This evidences a close interplay between the magnetic instability

  3. Synthesis and electrochemical performances of amorphous carbon-coated Sn-Sb particles as anode material for lithium-ion batteries

    SciTech Connect (OSTI)

    Wang Zhong [State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); General Research Institute for Nonferrous Metal, Beijing 100088 (China); Tian Wenhuai [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Liu Xiaohe [Department of Inorganic Materials, Central South University, Changsha, Hunan 410083 (China); Yang Rong [State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China); Li Xingguo [State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871 (China)], E-mail: xgli@pku.edu.cn

    2007-12-15T23:59:59.000Z

    The amorphous carbon coating on the Sn-Sb particles was prepared from aqueous glucose solutions using a hydrothermal method. Because the outer layer carbon of composite materials is loose cotton-like and porous-like, it can accommodate the expansion and contraction of active materials to maintain the stability of the structure, and hinder effectively the aggregation of nano-sized alloy particles. The as-prepared composite materials show much improved electrochemical performances as anode materials for lithium-ion batteries compared with Sn-Sb alloy and carbon alone. This amorphous carbon-coated Sn-Sb particle is extremely promising anode materials for lithium secondary batteries and has a high potentiality in the future use. - Graphical abstract: The amorphous carbon coating on the Sn-Sb particles was prepared from aqueous glucose solutions using a hydrothermal method. Because the outer layer carbon of composite materials is loose cotton-like and porous-like, it can accommodate the expansion and contraction of active materials to maintain the stability of the structure, and hinder effectively the aggregation of nano-sized alloy particles.

  4. Confirmatory Survey Report for Area B1S/B2S at the Chevron Mining Washington Remediation Project, Washington, PA

    SciTech Connect (OSTI)

    W. C. Adams

    2007-11-20T23:59:59.000Z

    During the period of October 2 and 3, 2007, the Oak Ridge Institute for Science and Education (ORISE) performed confirmatory radiological survey activities which included gamma surface scans within Area B1S/B2S and the collection of soil samples from these areas.

  5. High-Temperature Thermoelectric Properties of the Solid–Solution Zintl Phase Eu11Cd6Sb12–xAsx (x < 3)

    SciTech Connect (OSTI)

    Kazem, Nasrin; Xie, Weiwei; Ohno, Saneyuki; Zevalkink, Alexandra; Miller, Gordon J.; Snyder, G. Jeffrey; Kauzlarich, Susan M.

    2014-02-11T23:59:59.000Z

    Zintl phases are compounds that have shown promise for thermoelectric applications. The title solid–solution Zintl compounds were prepared from the elements as single crystals using a tin flux for compositions x = 0, 1, 2, and 3. Eu11Cd6Sb12–xAsx (x < 3) crystallize isostructurally in the centrosymmetric monoclinic space group C2/m (no. 12, Z = 2) as the Sr11Cd6Sb12 structure type (Pearson symbol mC58). Efforts to make the As compositions for x exceeding ?3 resulted in structures other than the Sr11Cd6Sb12 structure type. Single-crystal X-ray diffraction indicates that As does not randomly substitute for Sb in the structure but is site specific for each composition. The amount of As determined by structural refinement was verified by electron microprobe analysis. Electronic structures and energies calculated for various model structures of Eu11Cd6Sb10As2 (x = 2) indicated that the preferred As substitution pattern involves a mixture of three of the six pnicogen sites in the asymmetric unit. In addition, As substitution at the Pn4 site opens an energy gap at the Fermi level, whereas substitution at the other five pnicogen sites remains semimetallic with a pseudo gap. Thermoelectric properties of these compounds were measured on hot-pressed, fully densified pellets. Samples show exceptionally low lattice thermal conductivities from room temperature to 775 K: 0.78–0.49 W/mK for x = 0; 0.72–0.53 W/mK for x = 1; and 0.70–0.56 W/mK for x = 2. Eu11Cd6Sb12 shows a high p-type Seebeck coefficient (from +118 to 153 ? V/K) but also high electrical resistivity (6.8 to 12.8 m?·cm). The value of zT reaches 0.23 at 774 K. The properties of Eu11Cd6Sb12–xAsx are interpreted in discussion with the As site substitution.

  6. Int. Symp. "Nanostructures: Physics and Technology" St Petersburg, Russia, June 26-30, 2006

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    source molecular beam epitaxy, using As2 an Sb2 valve cracker cells. The growth temperature of the SL, which are much more transparent than p-type ones. Absorption coefficients, deduced from transmission. The absorption coefficient is high (e.g. for a SL with N = 10 MLs, = 3 800 cm-1 at a wavelength of 5µm, 5 500 cm

  7. Space power technology into the 21st century

    SciTech Connect (OSTI)

    Faymon, K.A.; Fordyce, J.S.

    1984-01-01T23:59:59.000Z

    This paper discusses the space power systems of the early 21st century. The focus is on those capabilities which are anticipated to evolve from today's state-of-the-art and the technology development programs presently in place or planned for the remainder of the century. The power system technologies considered include solar thermal, nuclear, radioisotope, photovoltaic, thermionic, thermoelectric, and dynamic conversion systems such as the Brayton and Stirling cycles. Energy storage technologies considered include nickel hydrogen biopolar batteries, advanced high energy rechargeable batteries, regenerative fuel cells, and advanced primary batteries. The present state-of-the-art of these space power and energy technologies is discussed along with their projections, trends and goals. A speculative future mission model is postulated which includes manned orbiting space stations, manned lunar bases, unmanned earth orbital and interplanetary spacecraft, manned interplanetary missions, military applications, and earth to space and space to space transportation systems. The various space power/energy system technologies anticipated to be operational by the early 21st century are matched to these missions.

  8. SAES ST 909 PILOT SCALE METHANE CRACKING TESTS

    SciTech Connect (OSTI)

    Klein, J; Henry Sessions, H

    2007-07-02T23:59:59.000Z

    Pilot scale (500 gram) SAES St 909 methane cracking tests were conducted to determine material performance for tritium process applications. Tests that ran up to 1400 hours have been performed at 700 C, 202.7 kPa (1520 torr) with a 30 sccm feed of methane, with various impurities, in a 20 vol% hydrogen, balance helium, stream. A 2.5 vol% methane feed was reduced below 30 ppm for 631 hours. A feed of 1.1 vol% methane plus 1.4 vol% carbon dioxide was reduced below 30 ppm for 513 hours. The amount of carbon dioxide gettered by St 909 can be equated to an equivalent amount of methane gettered to estimate a reduced bed life for methane cracking. The effect of 0.4 vol % and 2.1 vol% nitrogen in the feed reduced the time to exceed 30 ppm methane to 362 and 45 hours, respectively, but the nitrogen equivalence to reduced methane gettering capacity was found to be dependent on the nitrogen feed composition. Decreased hydrogen concentrations increased methane getter rates while a drop of 30 C in one bed zone increased methane emissions by over a factor of 30. The impact of gettered nitrogen can be somewhat minimized if the nitrogen feed to the bed has been stopped and sufficient time given to recover the methane cracking rate.

  9. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

    SciTech Connect (OSTI)

    Zhang, Haijun; /Beijing, Inst. Phys.; Liu, Chao-Xing; /Tsinghua U., Beijing; Qi, Xiao-Liang; /Stanford U., Phys. Dept.; Dai, Xi; Fang, Zhong; /Beijing, Inst. Phys.; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-02-24T23:59:59.000Z

    Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap of such systems are protected by time-reversal symmetry. The study of such states was originally inspired by the robustness to scattering of conducting edge states in quantum Hall systems. Recently, such analogies have resulted in the discovery of topologically protected states in two-dimensional and three-dimensional band insulators with large spin-orbit coupling. So far, the only known three-dimensional topological insulator is Bi{sub x}Sb{sub 1-x}, which is an alloy with complex surface states. Here, we present the results of first-principles electronic structure calculations of the layered, stoichiometric crystals Sb{sub 2}Te{sub 3}, Sb{sub 2}Se{sub 3}, Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}. Our calculations predict that Sb{sub 2}Te{sub 3}, Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} are topological insulators, whereas Sb{sub 2}Se{sub 3} is not. These topological insulators have robust and simple surface states consisting of a single Dirac cone at the point. In addition, we predict that Bi{sub 2}Se{sub 3} has a topologically non-trivial energy gap of 0.3 eV, which is larger than the energy scale of room temperature. We further present a simple and unified continuum model that captures the salient topological features of this class of materials.

  10. Proposal for a second-generation, lattice matched, multiple junction Ga{sub 2}AsSb TPV converter

    SciTech Connect (OSTI)

    Horner, G.S. [Keithley Instruments, Solon Ohio (United States); Coutts, T.J.; Wanlass, M.W. [National Renewable Energy Laboratory, Golden Colorado (United States)

    1995-01-05T23:59:59.000Z

    First order device modeling is used to show that spontaneously ordered Ga{sub 2}AsSb may prove useful in the newly-active field of thermophotovoltaic power generation. Optimal band gaps for single-, double- and triple-junction III-V devices are presented for a range of blackbody emitter temperatures (1000--2000 K), and it is shown that monolithic, current-matched devices may be constructed that are lattice-matched throughout the stack to an underlying InP substrate. Device efficiency, short-circuit current, fill factor, and open-circuit voltage calculations are presented. The power generation capabilities are expected to be substantial due to the proximity of the devices to the thermal radiators. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  11. Measurement and modeling of infrared nonlinear absorption coefficients and laser-induced damage thresholds in Ge and GaSb

    SciTech Connect (OSTI)

    Wagner, T. J.; Bohn, M. J.; Coutu, R. A. Jr. [Air Force Institute of Technology, Wright Patterson Air Force Base, Ohio 45433 (United States); Gonzalez, L. P.; Murray, J. M.; Guha, S. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson Air Force Base, Ohio 45433 (United States); Schepler, K. L. [Air Force Research Laboratory, Sensors Directorate, Wright Patterson Air Force Base, Ohio 45433 (United States)

    2010-10-15T23:59:59.000Z

    Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 {mu}m for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 {mu}m and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al{sub 2}O{sub 3} anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond pulses, respectively.

  12. Atomic intermixing and interface roughness in short-period InAs/GaSb superlattices for infrared photodetectors

    SciTech Connect (OSTI)

    Ashuach, Y.; Lakin, E.; Kaufmann, Y. [Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Saguy, C. [Solid State Institute, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Zolotoyabko, E., E-mail: zloto@tx.technion.ac.il [Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Solid State Institute, Technion—Israel Institute of Technology, Haifa 32000 (Israel)

    2014-09-28T23:59:59.000Z

    A set of advanced characterization methods, including high-resolution X-ray diffraction (measurements and simulations), cross-sectional scanning tunneling microscopy, and high-angle annular dark-field scanning transmission electron microscopy is applied to quantify the interface roughness and atomic intermixing (in both cation and anion sub-lattices) in short period (6–7?nm) InAs/GaSb superlattices intended for mid-wavelength (M) and long-wavelength (L) infrared detectors. The undesired atomic intermixing and interface roughness in the L-samples were found to be considerably lower than in the M-samples. In all specimens, anion intermixing is much higher than that in the cation sub-lattice. Possible origins of these findings are discussed.

  13. TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

    SciTech Connect (OSTI)

    Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

    2008-01-01T23:59:59.000Z

    It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

  14. Effect of annealing on the properties of Sb doped ZnO thin films prepared by spray pyrolysis technique

    SciTech Connect (OSTI)

    Kumar, N. Sadananda; Bangera, Kasturi V.; Shivakumar, G. K. [Thin Films Laboratory, Department of Physics, National Institute of Technology Karnataka,Surathkal - 575025, Mangalore (India)

    2014-01-28T23:59:59.000Z

    Sb doped ZnO thin films have been deposited on glass substrate at 450°C using spray pyrolysis technique. The X-ray diffraction studies revealed that the as deposited films are polycrystalline in nature with (100) preferred orientation. Whereas the films annealed at 450° C for 6h show a preferential orientation along (101) direction. Crystallites size varies from 15.7 nm to 34.95 nm with annealing duration. The Scanning electron microscopic analysis shows the plane and smooth surface of the films. The optical properties of annealed films have shown a variation in the band gap between 3.37 eV and 3.19 eV. Transparency of as grown and annealed films decreases from 78 % to 65% respectively in the visible region. The electrical conductivity of the as grown film shows an increase in the electrical conductivity by one order of magnitude with increase in the annealing duration.

  15. Thermodynamic and transport properties of single-crystal Yb{sub 14}MnSb{sub 11}

    SciTech Connect (OSTI)

    Fisher, I.R.; Wiener, T.A.; Budko, S.L.; Canfield, P.C. [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)] [Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States); Chan, J.Y.; Kauzlarich, S.M. [Department of Chemistry, One Shields Avenue, University of California, Davis, California 95616 (United States)] [Department of Chemistry, One Shields Avenue, University of California, Davis, California 95616 (United States)

    1999-06-01T23:59:59.000Z

    Relatively large (up to 250 mg) single crystals of the intermetallic compound Yb{sub 14}MnSb{sub 11} have been prepared by a flux-growth technique. The results of thermodynamic and transport measurements of these samples are presented. The compound orders ferromagnetically at approximately T{sub C}=53{plus_minus}1K, with a magnetization consistent with the assignment Mn{sup 3+} (3d{sup 4}) and Yb{sup 2+} (4f{sup 14}). The Mn moments are local in nature, with the full effective and saturated moment of the Hund{close_quote}s rule spin-only ground state. The electrical resistivity has a metallic temperature dependence, with only a modest anisotropy. Room-temperature values of the resistivity are relatively high for an intermetallic compound: 1630{plus_minus}160 {mu}{Omega}cm and 1250{plus_minus}130 {mu}{Omega}cm for currents flowing approximately parallel and perpendicular to the {ital c} axis, respectively. There is a distinct loss of spin-disorder scattering in the resistivity at T{sub C}. From the heat capacity, a rough estimation of the magnetic entropy gives {Delta}S{sub M}{approx}12.1 J/mol K, the value in reasonable agreement with the expected {Delta}S{sub M}{approx}R ln 5 from the assignment of these moments. All of these data are consistent with a picture of Mn{sup 3+} local moments being coupled via conduction electrons. To this end, Yb{sub 14}MnSb{sub 11} appears to be analogous to local-moment rare-earth intermetallic compounds, and may point the way toward a class of 3d Kondo lattice compounds. {copyright} {ital 1999} {ital The American Physical Society}

  16. US-India Education Foundation (USIEF): "Obama-Singh 21st Century Knowledge Initiative"

    E-Print Network [OSTI]

    Nahar, Sultana Nurun

    US-India Education Foundation (USIEF): "Obama-Singh 21st Century Knowledge Initiative" Award competitive grant from the US-India Education Foundation (USIEF), under the Obama-Singh 21st Century Knowledge Initiative, for a pilot project to train STEM faculty in partnership with the Aligarh Muslim University

  17. WEATHERIZATION INDUSTRIES SAVE ENERGY ST SE SALEM, OREGON 97301 (503) 5691381 WEATHERIZATIONALLIES@GMAIL.COM

    E-Print Network [OSTI]

    to be energy efficient. BPA's current standard is a U-.30. By 2015, current products will certainly be obsoleteWEATHERIZATION INDUSTRIES SAVE ENERGY 565 21ST ST SE SALEM, OREGON 97301 · (503) 5691381 AND CONSERVATION COUNCIL'S CONSERVATION PLANNING ASSUMPTIONS Weatherization Industries Save Energy (WISE

  18. INFORMATION TECHNOLOGY AT PRINCETON IN THE 21ST CENTURY: A STRATEGIC DIRECTION

    E-Print Network [OSTI]

    INFORMATION TECHNOLOGY AT PRINCETON IN THE 21ST CENTURY: A STRATEGIC DIRECTION FINDINGS Princeton must consolidate and strengthen its engagement with information technology. This is the principal 2004 If the 20th century was the age of computer technology, the 21st is emerging as the age

  19. A E Costley ITER Diagnostics, 21st IAEA of 5 slides

    E-Print Network [OSTI]

    Costley ITER Diagnostics, 21st IAEA 2 of 5 slides PLAN Requirements for Plasma and First Wall MeasurementsA E Costley ITER Diagnostics, 21st IAEA 1 of 5 slides A E Costley1, C Walker2, L Bertalot2, R, Germany THE DESIGN AND IMPLEMENTATIONTHE DESIGN AND IMPLEMENTATION OF DIAGNOSTIC SYSTEMS ON ITEROF

  20. The 33st International Electric Propulsion Conference, The George Washington University, USA October 6 10, 2013

    E-Print Network [OSTI]

    Walker, Mitchell

    The 33st International Electric Propulsion Conference, The George Washington University, USA, 30332, USA Abstract: Accurate measurement of ion charge flux in the plume of spacecraft electric.walker@ae.gatech.edu #12;The 33st International Electric Propulsion Conference, The George Washington University, USA

  1. Course offer (1/2) Hydrology II (1st Sem. MSc)

    E-Print Network [OSTI]

    Giger, Christine

    1 Course offer (1/2) · Hydrology II (1st Sem. MSc) · advanced engineering hydrology course focused on hydrological monitoring, processunderstanding and new analysis and modelling techniques · Fluvial Systems (1st management and riverine ecosystem sustainability · Hydrology of Glaciers (2nd Sem. MSc) · study of ice

  2. 1st International Workshop on High Performance Computing, Networking and Analytics for the Power Grid

    E-Print Network [OSTI]

    1st International Workshop on High Performance Computing, Networking and Analytics for the Power Transient Stability" #12;1st International Workshop on High Performance Computing, Networking and Analytics (University of Vermont). "Developing a Dynamic Model of Cascading Failure for High Performance Computing using

  3. Request Form for St. Andrew's Theological College/University of Saskatchewan

    E-Print Network [OSTI]

    Saskatchewan, University of

    Request Form for St. Andrew's Theological College/University of Saskatchewan This is an Agreement between the College of Graduate Studies and Research, the University of Saskatchewan, and St. Andrew's Theological College College of Graduate Studies and Research University of Saskatchewan University

  4. Coastal flood damage and adaptation costs under 21st century sea-level rise

    E-Print Network [OSTI]

    Marzeion, Ben

    Coastal flood damage and adaptation costs under 21st century sea-level rise Jochen Hinkela,1st century sea-level rise are assessed on a global scale taking into account a wide range- ment and sea-level rise. Uncertainty in global mean and regional sea level was derived from four

  5. First Name Last Name Parish/School System Michelle Adkins St. Charles

    E-Print Network [OSTI]

    Harms, Kyle E.

    Calcasieu Monica Aphonso Vernon Hettie Averite St. Charles Dawn Babineaux Evangeline Jasmine Banks West Vernon Kelly Brant Washington Denise Brashear Calcasieu Jared Breaux West Baton Rouge Joanna Brockhoff St Cole Lafourche Cody Cole Beauregard Jodi Cole Sabine Walter Cole Bossier Connie Conner Beauregard

  6. BIOLOGY OF THE BLUE CRAB, CALLINECTES SAPIDUS RATHBUN, IN THE ST. JOHNS RIVER, FLORIDA

    E-Print Network [OSTI]

    BIOLOGY OF THE BLUE CRAB, CALLINECTES SAPIDUS RATHBUN,· IN THE ST. JOHNS RIVER, FLORIDA By MARLIN E ABSTRACT Blue crabs commonly mated from March to July and from October to December In the St. Johns River. Blue crabs spawned in the first 30 km. of river above the mouth, and the eggs hatched in the ocean

  7. The effect of development on nitrogen loading on St. John, U.S. Virgin Islands

    E-Print Network [OSTI]

    Navato, Alfred Patrick

    2007-01-01T23:59:59.000Z

    The majority of St. John's land and coast is a National Park and is protected by the federal government. In spite of these restrictions, the population of St. John has risen in the past fifteen years as has the number of ...

  8. A synchronous model of the PLC programming language ST Fernando Jimenez-Fraustro

    E-Print Network [OSTI]

    Boyer, Edmond

    A synchronous model of the PLC programming language ST Fernando Jimenez-Fraustro IRISA / INRIA F of a synchronous model of the PLC programming lan- guage ST. This work is part of the integration of the IEC 1131 Logic Controllers (PLC) architec- tures. Their design relies on standards like the IEC 1131 norm

  9. The toroidal field coil design for ARIES-ST

    SciTech Connect (OSTI)

    Reiersen, W.; Dahlgren, F.; Fan, H.M.; Neumeyer, C.; Zatz, I.

    2000-01-21T23:59:59.000Z

    An evolutionary process was used to develop the toroidal field (TF) coil design for the ARIES-ST (Spherical Tokamak). Design considerations included fabricability, assembly, maintenance, energy efficiency, and structural robustness. The design addresses a number of the concerns (complexity) and criticisms (high cost, high recirculating power) of fusion. It does this by: (1) Applying advanced, but available laser forming and spray casting techniques for manufacturing the TF coil system; (2) Adopting a simple single toroidal field coil system to make assembly and maintenance much easier, the single turn design avoids the necessity of using the insulation as a structural component of the TF coils, and hence is much more robust than multi-turn designs; and (3) Using a high conductivity copper alloy and modest current densities to keep the recirculating power modest.

  10. St. Louis FUSRAP-A Strategy for Success

    SciTech Connect (OSTI)

    Lyerla, M.; Fox, B.; Chinnock, J.; Haase, A.; Wojinski, S.; Bretz, M.; Cotner, S.; Dellorco, L.; Mueller, D.; Roberts, S.; Overmohle, D.

    2002-02-27T23:59:59.000Z

    In October 1997, Congress transferred the Formerly Utilized Sites Remedial Action Program (FUSRAP) from the Department of Energy (DOE) to the United States Army Corps of Engineers (USACE). FUSRAP addresses contamination generated by activities of the Manhattan Engineering District and the Atomic Energy Commission during the 1940's and 50's in support of the nation's nuclear weapons development program. The USACE Operation Order for FUSRAP gave responsibility for remediation of five sites in Missouri and Illinois to the USACESt. Louis District. The principal site is the St. Louis Airport Site (SLAPS), which involves the removal, transportation, disposal, and restoration of approximately 28 acres and 245,000 bank cubic yards (bcy) of contaminated soils. This paper will focus on the progress and achievements in removal action efficiencies of the SLAPS team. This team consists primarily of the USACE and Stone & Webster, Incorporated.

  11. Results of mobile gamma scanning activities in St. Louis, Missouri

    SciTech Connect (OSTI)

    Rodriguez, R E; Witt, D A; Cottrell, W D; Carrier, R F

    1991-06-01T23:59:59.000Z

    From 1942 through approximately 1966, the Mallinckrodt Chemical Works operated four plants in St. Louis, Missouri, for the Manhattan Engineer District and the Atomic Energy Commission. A variety of production processes using uranium- and radium-bearing ore materials were performed at the plants. It is the policy of the DOE to verify that radiological conditions at such sites or facilities comply with current DOE guidelines. Guidelines for release and use of such sites have become more stringent as research has provided more information since previous cleanups. The Formerly Utilized Sites Remedial Action Program (FUSRAP) was established as part of that effort to confirm the closeout status of facilities under contract to agencies preceding DOE during early nuclear energy development. Under the FUSRAP program, the Mallinckrodt properties have been previously investigated to determine the extent of on-site radiological contamination. At the request of DOE, Oak Ridge National Laboratory (ORNL) conducted a survey in May 1990, of public roadways and suspected haul routes between the Mallinckrodt plant and storage sites in St. Louis to ensure that no residual radioactive materials were conveyed off-site. A mobile gamma scanning van with an on-board computer system was used to identify possible anomalies. Suspect areas are those displaying measurements deviating from gamma exposure rates identified as typical for radiologically unenhanced areas in the vicinity of the areas of interest. The instrumentation highlighted three anomaly locations each of which measured less than 1m{sup 2} in size. None of the slightly elevated radiation levels originated from material associated with former AEC-related processing operations in the area. The anomalies resulted from elevated concentrations of radionuclides present in phosphate fertilizers, increased thorium in road-base gravel, and emanations from the radioactive storage site near the Latty Avenue airport. 9 refs., 3 figs.

  12. A Translocated Population of the St. Croix Ground Lizard: Analyzing Its Detection Probability and Investigating its Impacts on the Local Prey Base

    E-Print Network [OSTI]

    Treglia, Michael Louis

    2010-10-12T23:59:59.000Z

    The St. Croix ground lizard, Ameiva polops, is a United States endangered species endemic to St. Croix, U.S. Virgin Islands. It was extirpated from St. Croix Proper by invasive mongooses, and remaining populations are on small, nearby cays...

  13. Social Media, Social Kids: Sociocultural Implications of 21st Century Media for Development in the Preteen Period.

    E-Print Network [OSTI]

    Tehranian, Yalda

    2013-01-01T23:59:59.000Z

    Foundation Series on Digital Media and Learning (1st ed. ).connected: The new digital media habits of young children.Foundation Series on Digital Media and Learning (1st ed. ).

  14. Proceedings of 4th Fire Behavior and Fuels Conference, July 1-4, 2013, St. Petersburg, Russia

    E-Print Network [OSTI]

    Proceedings of 4th Fire Behavior and Fuels Conference, July 1-4, 2013, St. Petersburg, Russia and 513 #12;Proceedings of 4th Fire Behavior and Fuels Conference, July 1-4, 2013, St. Petersburg, Russia

  15. Improved Thermoelectric Performance of p-type Skutterudite YbxFe4-yPtySb12 (0.8 x 1, y = 1 and 0.5)

    SciTech Connect (OSTI)

    Cho, Jung Y [GM R& D and Planning, Warren, Michigan; Ye, Zuxin [GM Research and Development Center; Tessema, Misle [GM Research and Development Center; Salvador, James R. [GM R& D and Planning, Warren, Michigan; Waldo, Richard [GM R& D and Planning, Warren, Michigan; Yang, Jiong [Chinese Academy of Sciences; Zhang, Weiqing [Chinese Academy of Sciences; Yang, Jihui [University of Washington; Cai, Wei [ORNL; Wang, Hsin [ORNL

    2013-01-01T23:59:59.000Z

    Thermoelectric performance of p-type skutterudites currently lags that of the corresponding n-type materials and improvement of this important class of materials have become the focus of considerable research effort world-wide. Recent calculations find promising band structural features in p-type skutterudite materials of the type AeFe3NiSb12 ( Ae = Ca, Sr, or Ba) which could potentially lead to excellent thermoelectric properties. Recent work on the Yb- filled analog of the these formulations (YbFe3NiSb12) however finds that the onset of intrinsic conduction at lower than expected temperatures deteriorates the performance above 500 K leading to poor performance in the temperature range of interest for automotive waste heat recovery applications. We therefore seek a way to increase the band gap in order to find a way to minimize the deleterious effects of intrinsic conduction. Here we present ab initio band structure calculations and the synthesis and thermoelectric properties of YbxFe4-yPtySb12 (0.8 x 1, y = 1 and 0.5). Ab initio calculations find that the band gap increases for YbFe3PtSb12 as compared to the Ni-containing analog, though no such increase in the band gap energy was found for as compared to YbFe3.5Ni0.5Sb12. The y = 1 samples shows a characteristic transition to intrinsic conduction with a decrease in the Seebeck coefficient at temperatures above 700 K. The increased carrier concentration in y = 0.5 virtually eliminates any evidence of intrinsic conduction and the Seebeck coefficients for these samples increase monotonically up to 750 K, resulting in power factors approaching 27 W/cm K2 at 750 K. These power factors combined with low thermal conductivity result in a ZT = 0.9 at 750 K for Yb0.95Fe3.5Pt0.5Sb12.

  16. Proc. of 2nd Intern. Workshop "New Models of Business: Managerial Aspects and Enabling Technology", St. Petersburg State University, St. Petersburg, Russia, June 26-28, 2002, 212-220

    E-Print Network [OSTI]

    Krivulin, Nikolai K.

    ", St. Petersburg State University, St. Petersburg, Russia, June 26-28, 2002, 212-220 Algebraic Modeling. Petersburg State University, Russia Abstract An algebraic approach to the modeling and performance evaluation, Petrodvorets, St. Petersburg, 198504 Russia, e-mail: Nikolai.Krivulin@pobox.spbu.ru. 3 The work is partially

  17. Feasibility Study of Economics and Performance of Solar Photovoltaics at the Former St. Marks Refinery in St. Marks, Florida

    SciTech Connect (OSTI)

    Lisell, L.; Mosey, G.

    2010-09-01T23:59:59.000Z

    This report presents the results of an assessment of the technical and economic feasibility of deploying a photovoltaics (PV) system on a brownfield site in St. Marks, Florida. The site was assessed for possible PV installations. The cost, performance, and site impacts of different PV options were estimated. The economics of the potential systems were analyzed using an electric rate of $0.08/kWh and incentives offered in the State of Florida and from the two accessible utilities, Progress Energy and the City of Tallahassee. According to the site production calculations, the most cost-effective system in terms of return on investment is the fixed-tilt thin film technology. The report recommends financing options that could assist in the implementation of such a system.

  18. Validation of Innovative Exploration Technologies for Newberry Volcano: Seismic data - raw taken by Apex Hipoint for 1st test 2012

    SciTech Connect (OSTI)

    Jaffe, Todd

    2012-01-01T23:59:59.000Z

    Validation of Innovative Exploration Technologies for Newberry Volcano: Seismic data - raw taken by Apex Hipoint for 1st test 2012

  19. Validation of Innovative Exploration Technologies for Newberry Volcano: Seismic data - raw taken by Apex Hipoint for 1st test 2012

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Jaffe, Todd

    Validation of Innovative Exploration Technologies for Newberry Volcano: Seismic data - raw taken by Apex Hipoint for 1st test 2012

  20. Estimation of Volatility The values of the parameters r, t, St, T, and K used to price a call op-

    E-Print Network [OSTI]

    Privault, Nicolas

    is the price of light sweet crude oil futures traded on the New York Mercantile Exchange (NYMEX), basedChapter 7 Estimation of Volatility The values of the parameters r, t, St, T, and K used to price in the stock price model dSt St = µdt + dBt. A natural estimator for the trend parameter µ can be written as ^µ

  1. Reverse Monte Carlo simulation of Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} glasses

    SciTech Connect (OSTI)

    Abdel-Baset, A. M.; Rashad, M. [Physics Department, Faculty of Science , Assiut University, Assiut, P.O. Box 71516 (Egypt); Moharram, A. H. [Faculty of Science, King Abdul Aziz Univ., Rabigh Branch, P.O. Box 433 (Saudi Arabia)

    2013-12-16T23:59:59.000Z

    Two-dimensional Monte Carlo of the total pair distribution functions g(r) is determined for Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} alloys, and then it used to assemble the three-dimensional atomic configurations using the reverse Monte Carlo simulation. The partial pair distribution functions g{sub ij}(r) indicate that the basic structure unit in the Se{sub 80}Te{sub 15}Sb{sub 5} glass is di-antimony tri-selenide units connected together through Se-Se and Se-Te chain. The structure of Se{sub 80}Te{sub 20} alloys is a chain of Se-Te and Se-Se in addition to some rings of Se atoms.

  2. Thermoelectric power of Bi and Bi{sub 1{minus}x}Sb{sub x} alloy thin films and superlattices grown by MBE

    SciTech Connect (OSTI)

    Cho, S.; DiVenere, A.; Wong, G.K.; Ketterson, J.B.; Meyer, J.R.; Hoffman, C.A.

    1997-07-01T23:59:59.000Z

    The authors have measured the thermoelectric power (TEP) of MBE-grown epitaxial Bi and Bi{sub 1{minus}x} alloy thin films and superlattices as a function of temperature in the range 20--300 K. They have observed that the TEP of a Bi thin film of 1 {micro}m thickness is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 {angstrom} and 800 {angstrom} Bi well thicknesses are enhanced over the bulk values. For x = 0.072 and 0.088 in Bi{sub 1{minus}x}Sb{sub x} thin films showing semiconducting behavior, TEP enhancement was observed by a factor of two. However as Bi or Bi{sub 1{minus}x}Sb{sub x} well thickness decreases in superlattice geometry, the TEP decreases, which may be due to unintentional p-type doping.

  3. Preferred orientation of nanoscale order at the surface of amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} films

    SciTech Connect (OSTI)

    Tony Li, Tian; Abelson, John R. [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St., Urbana, Illinois 61801 (United States) [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St., Urbana, Illinois 61801 (United States); Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1308 W. Main St., Urbana, Illinois 61801 (United States); Hoon Lee, Tae; Elliott, Stephen R. [Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW (United Kingdom)] [Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW (United Kingdom)

    2013-11-11T23:59:59.000Z

    We report evidence that as-deposited amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} thin films contain nanoscale clusters that exhibit a preferred orientation, attributed to the earliest stages of heterogeneous nucleation. Fluctuation transmission electron microscopy reveals structural order in the samples, but (220)-related contributions are suppressed. When homogeneous nucleation is promoted via electron bombardment, the sample remains diffraction amorphous but the (220) contribution appears. We simulated data for randomly oriented nanoscale order using ab initio molecular-dynamics models of Ge{sub 2}Sb{sub 2}Te{sub 5}. The simulated (220) contribution always has larger magnitude than higher-order signals; thus, the lack of the experimental signal indicates a significant preferred orientation.

  4. High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

    SciTech Connect (OSTI)

    Hoang, A. M.; Chen, G.; Chevallier, R.; Haddadi, A.; Razeghi, M., E-mail: razeghi@eecs.northwestern.edu [Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-06-23T23:59:59.000Z

    Very long wavelength infrared photodetectors based on InAs/InAsSb type-II superlattices are demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off wavelength of 14.6??m. At 77?K, the photodiode exhibited a peak responsivity of 4.8?A/W, corresponding to a quantum efficiency of 46% at ?300?mV bias voltage from front side illumination without antireflective coating. With the dark current density of 0.7?A/cm{sup 2}, it provided a specific detectivity of 1.4?×?10{sup 10} Jones. The device performance was investigated as a function of operating temperature, revealing a very stable optical response and a background limited performance below 50?K.

  5. Dynamical scaling properties of nanoporous undoped and Sb-doped SnO{sub 2} supported thin films during tri- and bidimensional structure coarsening

    SciTech Connect (OSTI)

    Santilli, C. V.; Rizzato, A. P.; Pulcinelli, S. H.; Craievich, A. F. [Instituto de Quimica/UNESP, P.O. Box 355, Araraquara, Sao Paulo 14800-900 (Brazil); Instituto de Fisica/USP, P.O. Box 66318, Sao Paulo, Sao Paulo 05315-970, (Brazil)

    2007-05-15T23:59:59.000Z

    The coarsening of the nanoporous structure developed in undoped and 3% Sb-doped SnO{sub 2} sol-gel dip-coated films deposited on a mica substrate was studied by time-resolved small-angle x-ray scattering (SAXS) during in situ isothermal treatments at 450 and 650 deg. C. The time dependence of the structure function derived from the experimental SAXS data is in reasonable agreement with the predictions of the statistical theory of dynamical scaling, thus suggesting that the coarsening process in the studied nanoporous structures exhibits dynamical self-similar properties. The kinetic exponents of the power time dependence of the characteristic scaling length of undoped SnO{sub 2} and 3% Sb-doped SnO{sub 2} films are similar ({alpha}{approx_equal}0.09), this value being invariant with respect to the firing temperature. In the case of undoped SnO{sub 2} films, another kinetic exponent, {alpha}{sup '}, corresponding to the maximum of the structure function was determined to be approximately equal to three times the value of the exponent {alpha}, as expected for the random tridimensional coarsening process in the dynamical scaling regime. Instead, for 3% Sb-doped SnO{sub 2} films fired at 650 deg. C, we have determined that {alpha}{sup '}{approx_equal}2{alpha}, thus suggesting a bidimensional coarsening of the porous structure. The analyses of the dynamical scaling functions and their asymptotic behavior at high q (q being the modulus of the scattering vector) provided additional evidence for the two-dimensional features of the pore structure of 3% Sb-doped SnO{sub 2} films. The presented experimental results support the hypotheses of the validity of the dynamic scaling concept to describe the coarsening process in anisotropic nanoporous systems.

  6. Supplementary Information N. Vidal, J.-C. Rage, A. Couloux, and S.B. Hedges. Snakes (Serpentes). Pp. 390397 in The Timetree of Life, S. B.

    E-Print Network [OSTI]

    Hedges, Blair

    1 Supplementary Information N. Vidal, J.-C. Rage, A. Couloux, and S.B. Hedges. Snakes (Serpentes-TCC-ATG-TCR-ATR-GGG-GA-3' (Vidal and Hedges, 2005) for the JUN gene; LAM2D, 5'-TAY-CCA-CRK-TAY-DSY-TAT-GAR-CC-3' (Vidal. References Mortlock, D.P., Sateesh, P., Innis, J.W., 2000. Evolution of N-terminal sequences

  7. Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

    SciTech Connect (OSTI)

    Ulloa, J. M., E-mail: jmulloa@isom.upm.es; Utrilla, A. D.; Guzman, A.; Hierro, A. [Institute for Systems based on Optoelectronics and Microtechnology (ISOM) and Dpto. Ingeniería Electrónica, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Reyes, D. F.; Ben, T.; González, D. [Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)

    2014-10-07T23:59:59.000Z

    Changing the growth rate during the heteroepitaxial capping of InAs/GaAs quantum dots (QDs) with a 5?nm-thick GaAsSbN capping layer (CL) strongly modifies the QD structural and optical properties. A size and shape transition from taller pyramids to flatter lens-shaped QDs is observed when the CL growth rate is decreased from 1.5 to 0.5 ML/s. This indicates that the QD dissolution processes taking place during capping can be controlled to some extent by the GaAsSbN CL growth rate, with high growth rates allowing a complete preservation of the QDs. However, the dissolution processes are shown to have a leveling effect on the QD height, giving rise to a narrower size distribution for lower growth rates. Contrary to what could be expected, these effects are opposite to the strong blue-shift and improvement of the photoluminescence (PL) observed for higher growth rates. Nevertheless, the PL results can be understood in terms of the strong impact of the growth rate on the Sb and N incorporation into the CL, which results in lower Sb and N contents at higher growth rates. Besides the QD-CL band offsets and QD strain, the different CL composition alters the band alignment of the system, which can be transformed to type-II at low growth rates. These results show the key role of the alloyed CL growth parameters on the resulting QD properties and demonstrate an intricate correlation between the PL spectra and the sample morphology in complex QD-CL structures.

  8. Electroforming of Bi(1-x)Sb(x) nanowires for high-efficiency micro-thermoelectric cooling devices on a chip.

    SciTech Connect (OSTI)

    Overmyer, Donald L.; Webb, Edmund Blackburn, III (,; ); Siegal, Michael P.; Yelton, William Graham

    2006-11-01T23:59:59.000Z

    Active cooling of electronic systems for space-based and terrestrial National Security missions has demanded use of Stirling, reverse-Brayton, closed Joule-Thompson, pulse tube and more elaborate refrigeration cycles. Such cryocoolers are large systems that are expensive, demand large powers, often contain moving parts and are difficult to integrate with electronic systems. On-chip, solid-state, active cooling would greatly enhance the capabilities of future systems by reducing the size, cost and inefficiencies compared to existing solutions. We proposed to develop the technology for a thermoelectric cooler capable of reaching 77K by replacing bulk thermoelectric materials with arrays of Bi{sub 1-x}Sb{sub x} nanowires. Furthermore, the Sandia-developed technique we will use to produce the oriented nanowires occurs at room temperature and can be applied directly to a silicon substrate. Key obstacles include (1) optimizing the Bi{sub 1-x}Sb{sub x} alloy composition for thermoelectric properties; (2) increasing wire aspect ratios to 3000:1; and (3) increasing the array density to {ge} 10{sup 9} wires/cm{sup 2}. The primary objective of this LDRD was to fabricate and test the thermoelectric properties of arrays of Bi{sub 1-x}Sb{sub x} nanowires. With this proof-of-concept data under our belts we are positioned to engage National Security systems customers to invest in the integration of on-chip thermoelectric coolers for future missions.

  9. Madison St. Harrison St.

    E-Print Network [OSTI]

    Raina, Ramesh

    along the Connective Corridor 8. Noon - Green Building Tour - Meet at the SyracuseCOE 9. Noon - Green Building Tour - Meet at Synapse 10.Noon - Green Building Tour - Meet at Hotel Skyler 11.Noon - Green Building Tour - Meet at CNY Community Foundation/CNY Philanthropy Center 12.Noon - Green Building Tour

  10. HAMILTON ST HAMILTON ST

    E-Print Network [OSTI]

    Hanson, Stephen José

    Cancer Institute of New Jersey RWJMS Medical Education Core Pavillion RWJMS Clinical Research Center Hegeman Hall Hardenbergh Hall Pell Hall Frelinghuysen Hall Kreeger Learning Center Student Activities for the Study of Jewish Life Rutgers Federal Credit Union 26 Mine Street 17 Mine Street 29 Mine Street Career

  11. Uranium characterization at the St. Louis Airport Site

    SciTech Connect (OSTI)

    Schilk, A.J.; Hubbard, C.W.; Bowyer, T.W. [Pacific Northwest Lab., Richland, WA (United States); Reiman, R.T. [Technical Measurement Co., Boulder, CO (United States)

    1995-05-01T23:59:59.000Z

    In support of the Department of Energy/Office of Technology Development`s Expedited Site Characterization (ESC) project (coordinated by Ames Laboratory), the Pacific Northwest Laboratory demonstrated two complementary technologies at the St. Louis Airport (SLAP) site that have been designed and optimized for the rapid, in situ quantification of radionuclide contamination in surface soils. The sensors are optimized for the detection of high-energy beta particles or gamma rays emitted from the decay of specific radionuclides of interest. These technologies were demonstrated by measuring the beta and gamma fluxes at several locations within the SLAP site. Measurements were converted to average contamination levels, using detector calibrations performed with spiked samples (beta) or sealed sources (gamma). Additionally, subsurface activity levels were derived from discrete soil samples (provided by the ESC field crew) via gamma-ray spectrometry in a controlled laboratory setting. Since the beta and gamma sensor technologies are intrinsically sensitive to different types of radiation and activity distributions (i.e., surface and shallow subsurface, respectively), the data obtained from the two detectors provide complementary information about the distribution of the contamination. The results reported here suggest that a number of locations within the SLAP site have elevated levels of {sup 211}U, and the differences between the beta and gamma activities indicate that the contamination is largely located near the surface of the soil.

  12. Persisting cold extremes under 21st-century warming scenarios

    SciTech Connect (OSTI)

    Kodra, Evan A [ORNL; Steinhaeuser, Karsten J K [ORNL; Ganguly, Auroop R [ORNL

    2011-01-01T23:59:59.000Z

    Analyses of climate model simulations and observations reveal that extreme cold events are likely to persist across each land-continent even under 21st-century warming scenarios. The grid-based intensity, duration and frequency of cold extreme events are calculated annually through three indices: the coldest annual consecutive three-day average of daily maximum temperature, the annual maximum of consecutive frost days, and the total number of frost days. Nine global climate models forced with a moderate greenhouse-gas emissions scenario compares the indices over 2091 2100 versus 1991 2000. The credibility of model-simulated cold extremes is evaluated through both bias scores relative to reanalysis data in the past and multi-model agreement in the future. The number of times the value of each annual index in 2091 2100 exceeds the decadal average of the corresponding index in 1991 2000 is counted. The results indicate that intensity and duration of grid-based cold extremes, when viewed as a global total, will often be as severe as current typical conditions in many regions, but the corresponding frequency does not show this persistence. While the models agree on the projected persistence of cold extremes in terms of global counts, regionally, inter-model variability and disparity in model performance tends to dominate. Our findings suggest that, despite a general warming trend, regional preparedness for extreme cold events cannot be compromised even towards the end of the century.

  13. Neutron diffraction studies on the Heusler alloy Ni{sub 50}Mn{sub 37}Sb{sub 13}

    SciTech Connect (OSTI)

    Rama Rao, N. V.; Chelvane, J. Arout; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Hyderabad 500 058 (India); Morozkin, A. V. [Department of Chemistry, Moscow Lomonosov State University, Moscow 119992 (Russian Federation); Lamsal, J. [Department of Physics and Astronomy, University of Missouri-Columbia, Columbia, Missouri 65211 (United States); Yelon, W. B. [Materials Research Center and Department of Chemistry, Missouri University of Science and Technology, Rolla, Missouri 65409 (United States); Nirmala, R. [Department of Physics, Indian Institute of Technology Madras, Chennai 600 036 (India); Suresh, K. G. [Department of Physics, Indian Institute of Technology Bombay, Mumbai 400 076 (India); Malik, S. K. [International Institute of Physics (IIP)-UFRN, Natal, 59072-970 (Brazil)

    2011-04-01T23:59:59.000Z

    The evolution of martensitic to austenitic transformation in Ni{sub 50}Mn{sub 37}Sb{sub 13} has been studied usingtemperature dependent neutron diffraction, thermal property, and magnetization studies. Differential scanning calorimetric studies reveal a martensitic transformation T{sub M} around 291 K. The magnetization data yield a ferromagnetic ordering temperature of 329 K in the austenitic phase and 230 K in the martensitic phase. The analysis of the powder neutron diffraction data in the temperature range of 325-12 K indicates a structural transition from a high temperature cubic L2{sub 1} type structure to an orthorhombic structure. At 270 K, both cubic and orthorhombic phases coexist. Anisotropic unit cell changes are observed at the martensitic transformation: The unit cell expands by about 1.5% along the a axis, by about 2.5% along the c axis, and compresses by about 4.28% along the b axis. Both cubic and orthorhombic phases show commensurate collinear ferromagnetic ordering with a magnetic moment of {approx}3.67 {mu}{sub B}/Mn in Mn (2a and 2f) sites.

  14. Clean, Efficient, and Reliable Power for the 21st Century: Fact...

    Energy Savers [EERE]

    Fact Sheet This fact sheet provides an overview of the U.S. Department of Energy's Fuel Cell Technologies Office. Clean, Efficient, and Reliable Power for the 21st Century...

  15. Asia-Pacific Conference on FRP in Structures (APFIS 2007) S.T. Smith (ed)

    E-Print Network [OSTI]

    ; Smith and Teng, 2001; Stratford and Cadei, 2006) and fracture mechanics based (Lenwari et al., 2006Asia-Pacific Conference on FRP in Structures (APFIS 2007) S.T. Smith (ed) © 2007 International

  16. Grandparenting in the 21st Problems such as substance abuse, catastrophic illness, teen pregnancy, incarceration, unemployment,

    E-Print Network [OSTI]

    Grandparenting in the 21st Century Problems such as substance abuse, catastrophic illness, teen. The following information from the Texas A&M AgriLife Extension Service may be helpful Take Care of Yourself

  17. Development and implementation of a coral health assessment tool for St. John, USVI

    E-Print Network [OSTI]

    Detlefsen, William Robert

    2007-01-01T23:59:59.000Z

    Coral health in St. John, US Virgin Islands, has shown tremendous declines in recent years, with more than 50% declines in live coral cover. As one component of a group project to assess the possible impacts of anthropogenic ...

  18. Meeting report for the 1st skin microbiota workshop, Boulder, CO October 15-16 2012

    E-Print Network [OSTI]

    Gilbert, Jack A

    This report details the outcome of the 1st Skin Microbiota Workshop, Boulder, CO, held on October 15th-16th 2012. The workshop was arranged to bring Department of Defense personnel together with experts in microbial ecology, ...

  19. Probabilistic Projections of 21st Century Climate Change over Northern Eurasia

    E-Print Network [OSTI]

    Monier, Erwan

    2013-07-18T23:59:59.000Z

    We present probabilistic projections of 21st century climate change over Northern Eurasia using the Massachusetts Institute of Technology (MIT) Integrated Global System Model (IGSM), an integrated assessment model that ...

  20. Summer School in Nepal An International Summer Course (July 21st -

    E-Print Network [OSTI]

    Rimon, Elon

    Summer School in Nepal An International Summer Course (July 21st - August 15th) - Engineering the course in Nepal." In 2008, Talesnick established, at Technion, Israel's first chapter of Engineers

  1. Microsoft Word - FEIS-0285-SA-452-Ross-StJohns-PPA2108_WEB.doc

    Broader source: Energy.gov (indexed) [DOE]

    8, 2011 REPLY TO ATTN OF: KEP-4 SUBJECT: Supplement Analysis for the Transmission System Vegetation Management Program FEIS (DOEEIS- 0285SA-452 Ross-St. Johns No. 1) PP&A Project...

  2. Great Lakes-St. Lawrence River Basin Water Resources Compact (multi-state)

    Broader source: Energy.gov [DOE]

    This Act describes the management of the Great Lakes - St. Lawrence River basin, and regulates water withdrawals, diversions, and consumptive uses from the basin. The Act establishes a Council,...

  3. The Forgotten Children: African American Children and Child Welfare Reform in St. Louis, 1890-1930

    E-Print Network [OSTI]

    Thirlkel, Thomas E.

    2010-05-07T23:59:59.000Z

    Abstract Forgotten Children examines the influence of racial ideology on the trajectory of child welfare reform in late nineteenth century and early twentieth century St. Louis. The modern American child welfare system emerged in this time period...

  4. St. Lucie County- Solar and Energy Loan Fund (SELF)(Florida)

    Broader source: Energy.gov [DOE]

    St. Lucie County has partnered with local financial institutions and community leaders to establish the non-profit Solar and Energy Loan Fund (SELF), which will administer a low-interest loan...

  5. Probabilistic projections of 21st century climate change over Northern Eurasia

    E-Print Network [OSTI]

    Monier, Erwan

    We present probabilistic projections of 21st century climate change over Northern Eurasia using the Massachusetts Institute of Technology (MIT) Integrated Global System Model (IGSM), an integrated assessment model that ...

  6. PLC Software Program for Leak Detector Station A1 SALW-LD-ST-A1

    SciTech Connect (OSTI)

    KOCH, M.R.

    2001-01-25T23:59:59.000Z

    This document describes the software program for the programmable logic controller for the leak detector station ''SALW-LD-ST-A1''. The appendices contains a copy of the printout of the software program.

  7. Adapting to Climate Change and Variability in the Great Lakes-St. Lawrence Basin Great Lakes-St. Lawrence Basin Project

    E-Print Network [OSTI]

    ; this is the adaptation component. Communication of climate change information to various publicsAdapting to Climate Change and Variability in the Great Lakes-St. Lawrence Basin 52 Great Lakes in response to potential climate change and variability. When we were preparing for this talk on what we have

  8. The final Record of Decision for the St. Louis North County Sites (ROD) presents the final remedy for cleanup of sites in North St. Louis County that

    E-Print Network [OSTI]

    US Army Corps of Engineers

    Properties (VPs), and Hazelwood Interim Storage Site (HISS)/Latty Avenue VPs. Contamination is being in St. Louis, Missouri and the FUSRAP Project Office at 8945 Latty Avenue in Berkeley, Missouri. The ROD addressed under the Formerly Utilized Sites Remedial Action Program (FUSRAP). The ROD was signed

  9. THE IMPACT OF A TANK 40H DECANT ON THE PROJECTED OPERATING WINDOWS FOR SB4 AND GLASS SELECTION STRATEGY IN SUPPORT OF THE VARIABILITY STUDY

    SciTech Connect (OSTI)

    Raszewski, F; Tommy Edwards, T; David Peeler, D

    2008-02-07T23:59:59.000Z

    The Liquid Waste Organization (LWO) has requested that the Savannah River National Laboratory (SRNL) to assess the impact of a 100K gallon decant volume from Tank 40H on the existing sludge-only Sludge Batch 4 (SB4)-Frit 510 flowsheet and the coupled operations flowsheet (SB4 with the Actinide Removal Process (ARP)). Another potential SB4 flowsheet modification of interest includes the addition of 3 wt% sodium (on a calcined oxide basis) to a decanted sludge-only or coupled operations flowsheet. These potential SB4 flowsheet modifications could result in significant compositional shifts to the SB4 system. This paper study provides an assessment of the impact of these compositional changes to the projected glass operating windows and to the variability study for the Frit 510-SB4 system. The influence of the compositional changes on melt rate was not assessed in this study nor was it requested. Nominal Stage paper study assessments were completed using the projected compositions for the various flowsheet options coupled with Frit 510 (i.e., variation was not applied to the sludge and frit compositions). In order to gain insight into the impacts of sludge variation and/or frit variation (due to the procurement specifications) on the projected operating windows, three versions of the Variation Stage assessment were performed: (1) the traditional Variation Stage assessment in which the nominal Frit 510 composition was coupled with the extreme vertices (EVs) of each sludge, (2) an assessment of the impact of possible frit variation (within the accepted frit specification tolerances) on each nominal SB4 option, and (3) an assessment of the impact of possible variation in the Frit 510 composition due to the vendor's acceptance specifications coupled with the EVs of each sludge case. The results of the Nominal Stage assessment indicate very little difference among the various flowsheet options. All of the flowsheets provide DWPF with the possibility of targeting waste loadings (WLs) from the low 30s to the low 40s with Frit 510. In general, the Tank 40H decant has a slight negative impact on the operating window, but DWPF still has the ability to target current WLs (34%) and higher WLs if needed. While the decant does not affect practical WL targets in DWPF, melt rate could be reduced due to the lower Na{sub 2}O content. If true, the addition of 3 wt% Na{sub 2}O to the glass system may regain melt rate, assuming that the source of alkali is independent of the impact on melt rate. Coupled operations with Frit 510 via the addition of ARP to the decanted SB4 flowsheet also appears to be viable based on the projected operating windows. The addition of both ARP and 3 wt% Na{sub 2}O to a decanted Tank 40H sludge may be problematic using Frit 510. Although the Nominal Stage assessments provide reasonable operating windows for the SB4 flowsheets being considered with Frit 510, introduction of potential sludge and/or frit compositional variation does have a negative impact. The magnitude of the impact on the projected operating windows is dependent on the specific flowsheet options as well as the applied variation. The results of the traditional Variation Stage assessments indicate that the three proposed Tank 40H decanted flowsheet options (Case No.2--100K gallon decant, Case No.3--100K gallon decant and 3 wt% Na{sub 2}O addition and Case No.4--100K gallon decant and ARP) demonstrate a relatively high degree of robustness to possible sludge variation over WLs of interest with Frit 510. However, the case where the addition of both ARP and 3 wt% Na{sub 2}O is considered was problematic during the traditional Variation Stage assessment. The impact of coupling the frit specifications with the nominal SB4 flowsheet options on the projected operating windows is highly dependent on whether the upper WLs are low viscosity or liquidus temperature limited in the Nominal Stage assessments. Systems that are liquidus temperature limited exhibit a high degree of robustness to the applied frit and sludge variation, while those that are low viscosity li

  10. MECHANISMS OF PHASE FORMATION IN THE VITRIFICATION OF HIGH-FERROUS SAVANNAH RIVER SITE SB2 HLW SLUDGE SURROGATE - 9300

    SciTech Connect (OSTI)

    Marra, J

    2008-08-27T23:59:59.000Z

    Phase formation mechanisms associated with the vitrification of high-ferrous Savannah River Site (SRS) Sludge Batch 2 (SB2) high level waste surrogate were studied by infrared spectroscopy (IRS) and X-ray diffraction (XRD). Two mixtures at 50 wt% waste loading with commercially available Frit 320 (Li{sub 2}O - 8 wt %, B{sub 2}O{sub 3} - 8 wt %, Na{sub 2}O - 12 wt %, SiO{sub 2} - 72 wt %) and batch chemicals (LiOH {center_dot} H{sub 2}O, H{sub 3}BO{sub 3}, NaNO{sub 3}, SiO{sub 2}) to represent the frit formulation were prepared as slurries with a water content of {approx}50 wt%. The mixtures were air-dried at a temperature of 115 C and heat-treated at 500, 700, 900, 1000, 1100, 1200, and 1300 C for 1 hr at each temperature. Infrared spectra and XRD patterns of the products produced at each temperature were recorded. In both mixtures prepared using frit and batch chemicals to represent the frit, phase formation reactions were completed within the temperature range between 900 and 1000 C. However, residual quartz was still present in glass produced from the mixture with batch chemicals even at 1100 C. Although, the phase composition and structure of the glassy products obtained from both mixtures at temperatures over 1000 C were similar, the products obtained from the mixture using actual frit were more homogeneous than those from the mixture with batch chemicals. Thus, the use of frit rather than batch chemicals reduced the temperature range of phase formation and provided for production of higher quality glass.

  11. Uncertainty analyses for radiological assessments of St. Louis FUSRAP Sites

    SciTech Connect (OSTI)

    Miller, L.F.; Spencer, K.M.; White, D.E. [Univ. of Tennessee, Knoxville, TN (United States)

    1996-06-01T23:59:59.000Z

    Uncertainty analyses were performed in conjunction with radiological assessments of the Formerly Utilized Site Remedial Action Program (FUSRAP) St. Louis Downtown Site (SLDS), the Airport Site (SLAPS), and the Ball Field Site (SLBFS). Contaminants of concern at each location are natural uranium, radium, {sup 232}Th, and {sup 230}Th. The SLDS was used for uranium and thorium ore processing and includes an area of 45 acres. The SLAPS covers 22 acres and was used as a staging area for materials from the SLDS. Contaminants on the SLEFS were dispersed from the SLAPS, which involves an area of 80 acres. Significant levels of uranium contamination range from near zero to several thousand pCi/g and extend to about 20 feet in depth in a few locations at SLAPS and SLDS. Significant areas of peak radium and thorium concentrations are several hundred pCi/g with similar ranges in depth. Peak concentrations correspond to high grade ore. Radium and thorium constitute a greater radiological hazard than does uranium at all three locations. In order to satisfy the Environmental Protection Agency guideline for a lifetime risk of less than 10{sup -4}, the maximally exposed individual must receive less than about 4 mrem y{sup -1} if one assumes a risk of 5% per Sv. Based on the plant ingestion pathway, residual {sup 238}U, {sup 226}Ra, {sup 232}Th, and {sup 230}Th, concentrations of 400, 2, 4, and 40 pCi g{sup -1} at SLDS result in a 10{sup -4} lifetime risk with a 95% confidence level. Slightly different results were obtained for SLAPS and SLBFS. If more pathways are considered, such as radon, these values are even lower. Residual contamination levels could be increased by a factor of 25 if the historical Department of Energy limit of 100 mrem y{sup -1} is acceptable. The volume of contaminated soil that presents a 10{sup -4} lifetime risk is about 500,000 yd{sup 3}. The volume of soil contaminated to greater than 15 pCi g{sup -1} of each radionuclide is about a factor of ten less.

  12. Constitutional Environment and Entrepreneurship: An Empirical Study

    E-Print Network [OSTI]

    Zhang, Wei

    2012-01-01T23:59:59.000Z

    Malta Mauritius Moldova Montenegro Namibia NetherlandsMalta Mauritius Moldova Montenegro Namibia NetherlandsMalta Mauritius Moldova Montenegro Namibia Netherlands

  13. Social Media, Social Kids: Sociocultural Implications of 21st Century Media for Development in the Preteen Period.

    E-Print Network [OSTI]

    Tehranian, Yalda

    2013-01-01T23:59:59.000Z

    their media use is mobile technology, a new feature of theof the Internet, mobile technologies, and the rapid21 st century, as mobile technology and the Internet became

  14. Supercomputing for Industry in the West of Scotland Using ARCHIE-WeSt for Industrial Computational Fluid Dynamics

    E-Print Network [OSTI]

    Mottram, Nigel

    , Dr Derek Bennet, Expro Group 14:30 Leveraging the power of ARCHIE-WeSt for CFD with OpenFOAM, Dr Tom

  15. Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction

    E-Print Network [OSTI]

    Zhaoquan Zeng; Timothy A. Morgan; Dongsheng Fan; Chen Li; Yusuke Hirono; Xian Hu; Yanfei Zhao; Joon Sue Lee; Zhiming M. Wang; Jian Wang; Shuiqing Yu; Michael E. Hawkridge; Mourad Benamara; Gregory J. Salamo

    2013-03-11T23:59:59.000Z

    High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

  16. Synthesis and crystal structure of [(C{sub 7}H{sub 10}N){sub 2}]{sup 2+} [Sb{sub 2}Cl{sub 8}]{sup 2-1}

    SciTech Connect (OSTI)

    Guo Yun, E-mail: apharm@sina.com; Zhang Miao [Zhejiang University of Technology, College of Pharmaceutical Sciences (China); Shen Liang [Hangzhou Normal University, College of Material Chemistry and Chemical Engineering (China); Jin Yingying; Jin Zhimin [Zhejiang University of Technology, College of Pharmaceutical Sciences (China)

    2010-12-15T23:59:59.000Z

    The reaction of 2,6-dimethylpyridine with SbCl{sub 3} and HCl affords the title compound, the structure of which is ascertained by X-ray diffraction. The unit cell consists of one bridged Sb{sub 2}Cl{sub 8}{sup 2-} anion and two 2,6-dimethylpyridinium cations. The trivalent antimony ion is bonded not only directly to chlorine anions, but also is coordinated with chlorine anions by secondary bonds. In the crystal, there exists infinite coordinated chains of [Sb{sub 2}Cl{sub 8}]{sub n}{sup 2n-} anions running along the a axis, which link 2,6-dimethylpyridinium cations by N-H-Cl hydrogen bonds.

  17. Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells

    SciTech Connect (OSTI)

    Huang, Cheng-Ying, E-mail: cyhuang@ece.ucsb.edu; Law, Jeremy J. M.; Rodwell, Mark J. W. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Lu, Hong; Gossard, Arthur C. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106-5050 (United States); Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

    2014-03-28T23:59:59.000Z

    We have investigated the growth and electron transport in In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} two dimensional electron gases (2DEG) and compared their properties with In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As 2DEGs. For 10?nm thick InGaAs wells, the electron mobility of InGaAs/AlAsSb 2DEGs is comparable to that of InGaAs/InAlAs 2DEGs. Upon thinning the wells to 3?nm, the 2DEG mobility is degraded quickly and stronger interface roughness scattering is observed for InGaAs/AlAsSb heterointerfaces than for InGaAs/InAlAs heterointerfaces. Changing the group-V exposure between As and Sb during growth interruptions at the InGaAs/AlAsSb interfaces did not significantly change the 2DEG mobility. With the insertion of a two monolayer InAlAs at the InGaAs/AlAsSb interfaces, the interface roughness scattering is reduced and the mobility greatly increased. The room temperature 2DEG mobility shows 66% improvement from 1.63?×?10{sup 3} cm{sup 2}/V·s to 2.71?×?10{sup 3}?cm{sup 2}/V·s for a 3?nm InGaAs well.

  18. Widening the Axion Window via Kinetic and St\\"uckelberg Mixings

    E-Print Network [OSTI]

    Shiu, Gary; Ye, Fang

    2015-01-01T23:59:59.000Z

    We point out that kinetic and St\\"uckelberg mixings that are generically present in the low energy effective action of axions can significantly widen the window of axion decay constants. We show that an effective super-Planckian decay constant can be obtained even when the axion kinetic matrix has only sub-Planckian entries. Our minimal model involves only two axions, a St\\"uckelberg U(1) and a modest rank instanton generating non-Abelian group. Below the mass of the St\\"uckelberg U(1), there is only a single axion with a non-perturbatively generated potential. In contrast to previous approaches, the enhancement of the axion decay constant is not tied to the number of degrees of freedom introduced. We also discuss how kinetic mixings can lower the decay constant to the desired axion dark matter window. String theory embeddings of this scenario and their phenomenological features are briefly discussed.

  19. Two-state thermodynamics of the ST2 model for supercooled water

    SciTech Connect (OSTI)

    Holten, Vincent; Anisimov, Mikhail A., E-mail: anisimov@umd.edu [Institute for Physical Science and Technology and Department of Chemical and Biomolecular Engineering, University of Maryland, College Park, Maryland 20742 (United States); Palmer, Jeremy C.; Debenedetti, Pablo G. [Department of Chemical and Biological Engineering, Princeton University, Princeton, New Jersey 08544 (United States)] [Department of Chemical and Biological Engineering, Princeton University, Princeton, New Jersey 08544 (United States); Poole, Peter H. [Department of Physics, St. Francis Xavier University, Antigonish, Nova Scotia B2G 2W5 (Canada)] [Department of Physics, St. Francis Xavier University, Antigonish, Nova Scotia B2G 2W5 (Canada)

    2014-03-14T23:59:59.000Z

    Thermodynamic properties of the ST2 model for supercooled liquid water exhibit anomalies similar to those observed in real water. A possible explanation of these anomalies is the existence of a metastable, liquid–liquid transition terminated by a critical point. This phenomenon, whose possible existence in real water is the subject of much current experimental work, has been unambiguously demonstrated for this particular model by most recent simulations. In this work, we reproduce the anomalies of two versions of the ST2 model with an equation of state describing water as a non-ideal “mixture” of two different types of local molecular order. We show that the liquid–liquid transition in the ST2 water is energy-driven. This is in contrast to another popular model, mW, in which non-ideality in mixing of two alternative local molecular orders is entropy-driven, and is not sufficiently strong to induce a liquid–liquid transition.

  20. Microtechnology: The key to the technical challenges of the 21st century

    SciTech Connect (OSTI)

    Ceglio, N.M.

    1993-08-01T23:59:59.000Z

    Through the ages each culture and civilization has expressed its values and world view in the form of monuments derived from its most advanced and valued technologies. From pyramids to cathedrals, skyscrapers and moon rockets, our technology has enabled us to leave our mark on the landscape and in the minds of our people. In the 21st century, the compelling technology will be that of the micro-world, enabling the fabrication of structures with features smaller than the wavelengths of light. Such structures will allow use to monitor and control electrical, chemical, and optical phenomena in ways never before imagined. As in the past we will continue to create monuments, but the technological monuments of the 21st century will likely be viewed through a microscope. This report provides a discussion of microtechnology in the 21st century.

  1. Microstructural characterization in dissimilar friction stir welding between 304 stainless steel and st37 steel

    SciTech Connect (OSTI)

    Jafarzadegan, M. [Department of Materials Eng., Tarbiat Modares University, P.O. Box: 14115-143, Tehran (Iran, Islamic Republic of) [Department of Materials Eng., Tarbiat Modares University, P.O. Box: 14115-143, Tehran (Iran, Islamic Republic of); State Key Laboratory of Advanced Welding Production Technology, School of Materials Science and Eng., Harbin Institute of Technology, P.O. Box: 150001, Harbin (China); Feng, A.H. [State Key Laboratory of Advanced Welding Production Technology, School of Materials Science and Eng., Harbin Institute of Technology, P.O. Box: 150001, Harbin (China)] [State Key Laboratory of Advanced Welding Production Technology, School of Materials Science and Eng., Harbin Institute of Technology, P.O. Box: 150001, Harbin (China); Abdollah-zadeh, A., E-mail: zadeh@modares.ac.ir [Department of Materials Eng., Tarbiat Modares University, P.O. Box: 14115-143, Tehran (Iran, Islamic Republic of); Saeid, T. [Advanced Materials Research Center, Sahand University of Technology, P.O. Box: 51335-1996, Tabriz (Iran, Islamic Republic of)] [Advanced Materials Research Center, Sahand University of Technology, P.O. Box: 51335-1996, Tabriz (Iran, Islamic Republic of); Shen, J. [State Key Laboratory of Advanced Welding Production Technology, School of Materials Science and Eng., Harbin Institute of Technology, P.O. Box: 150001, Harbin (China)] [State Key Laboratory of Advanced Welding Production Technology, School of Materials Science and Eng., Harbin Institute of Technology, P.O. Box: 150001, Harbin (China); Assadi, H. [Department of Materials Eng., Tarbiat Modares University, P.O. Box: 14115-143, Tehran (Iran, Islamic Republic of)] [Department of Materials Eng., Tarbiat Modares University, P.O. Box: 14115-143, Tehran (Iran, Islamic Republic of)

    2012-12-15T23:59:59.000Z

    In the present study, 3 mm-thick plates of 304 stainless steel and st37 steel were welded together by friction stir welding at a welding speed of 50 mm/min and tool rotational speed of 400 and 800 rpm. X-ray diffraction test was carried out to study the phases which might be formed in the welds. Metallographic examinations, and tensile and microhardness tests were used to analyze the microstructure and mechanical properties of the joint. Four different zones were found in the weld area except the base metals. In the stir zone of the 304 stainless steel, a refined grain structure with some features of dynamic recrystallization was evidenced. A thermomechanically-affected zone was characterized on the 304 steel side with features of dynamic recovery. In the other side of the stir zone, the hot deformation of the st37 steel in the austenite region produced small austenite grains and these grains transformed to fine ferrite and pearlite and some products of displacive transformations such as Widmanstatten ferrite and martensite by cooling the material after friction stir welding. The heat-affected zone in the st37 steel side showed partially and fully refined microstructures like fusion welding processes. The recrystallization in the 304 steel and the transformations in the st37 steel enhanced the hardness of the weld area and therefore, improved the tensile properties of the joint. - Highlights: Black-Right-Pointing-Pointer FSW produced sound welds between st37 low carbon steel and 304 stainless steel. Black-Right-Pointing-Pointer The SZ of the st37 steel contained some products of allotropic transformation. Black-Right-Pointing-Pointer The material in the SZ of the 304 steel showed features of dynamic recrystallization. Black-Right-Pointing-Pointer The finer microstructure in the SZ increased the hardness and tensile strength.

  2. Nepheloid layer distribution in the Benguela upwelling area offshore Namibia.

    E-Print Network [OSTI]

    Mohrholz, Volker

    at the shelf break feeds a major intermediate nepheloid layer (INL) at 25.51S. This INL is positioned at 250

  3. Namibia-UNEP Green Economy Advisory Services | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating Solar Powerstories onFocus AreaDataBus Jump to:NSTARNamibia-UNEP Green Economy

  4. Thermoelectric Properties of P-type Skutterudites YbxFe3.5Ni0.5Sb12 (0.8 x 1)

    SciTech Connect (OSTI)

    Cho, Jung Y [GM R& D and Planning, Warren, Michigan; Ye, Zuxin [GM Research and Development Center; Tessema, M. [GM Research and Development Center; Waldo, R.A. [GM Research and Development Center; Salvador, James R. [GM R& D and Planning, Warren, Michigan; Yang, Jihui [General Motors Corporation; Cai, Wei [ORNL; Wang, Hsin [ORNL

    2012-01-01T23:59:59.000Z

    P-type skutterudites, with nominal compositions YbxFe3.5Ni0.5Sb12 (0.8 x 1), have been synthesized by induction melting with subsequent annealing, and their thermoelectric properties evaluated from 3.5 K to 745 K to assess their suitability for thermoelectric based waste heat recovery applications. We report results for the synthesis and measurements of Seebeck coefficient (S), electrical resistivity ( ), thermal conductivity ( ), Hall coefficient (RH), and effective mass (m*/m0) of YbxFe3.5Ni0.5Sb12 (0.8 x 1). Powder x-ray diffraction and electron probe microanalysis (EPMA) show that this system has a narrow filling fraction range of x ~ 0.84 to 0.86 for Yb in the crystallographic voids. All samples show positive RH for the entire temperature range studied with carrier concentrations ranging from 9.6 1020 to 2.8 1021 cm-3 at room temperature. Relatively high values of S result in high power factors up to 17 Wcm-1K-2 at room temperature. However, large values of and a sharp reduction in the S at high temperature due to bipolar conduction prevent the attainment of high thermoelectric figure of merit.

  5. Magnetic susceptibility of (Bi{sub 2-x}Sb{sub x})Te{sub 3} (0 < x < 1) alloys in the temperature range 2 to 50 K

    SciTech Connect (OSTI)

    Stepanov, N. P., E-mail: np-stepanov@mail.ru [Chernishevsky Zabaikalsky State Humanitarian Pedagogical University (Russian Federation); Nalivkin, V. U. [Chita State University (Russian Federation); Potapov, G. A. [Chernishevsky Zabaikalsky State Humanitarian Pedagogical University (Russian Federation)

    2012-01-15T23:59:59.000Z

    The superconducting quantum interferometer device with Josephson junctions (SQUID magnetometer) is used to study the temperature dependences of the magnetic susceptibility of (Bi{sub 2-x}Sb{sub x})Te{sub 3} (0 < x < 1) alloy crystals in the temperature range 2 to 50 K, at the magnetic field vector H orientations H perpendiular C{sub 3} and H Up-Tack C{sub 3} with respect to the crystal trigonal axis C{sub 3}. It is found that the magnetic susceptibility of the ion core of the samples under study is {chi}{sup G} = -0.35 Multiplication-Sign 10{sup -6} cm{sup 3}/g, the contribution of lattice defects to magnetic susceptibility can be disregarded, and the contribution of free carriers is of a diamagnetic nature in the entire studied temperature range. It is shown that the contribution of free carriers to the resulting magnetic susceptibility and its anisotropy can be described within the Pauli and Landau-Peierls approach. In calculating the magnetic susceptibility, taking into account the constant concentration of free carriers in the state of pronounced degeneracy, it is found that the temperature dependence of the anisotropic effective masses varies with crystal chemical composition. This is possibly associated with the complex structure of the valence band and its variation as the Sb{sub 2}Te{sub 3} content in the alloy increases.

  6. Stimulated crystallization of melt-quenched Ge{sub 2}Sb{sub 2}Te{sub 5} films employing femtosecond laser double pulses

    SciTech Connect (OSTI)

    Cotton, Rebecca L.; Siegel, Jan [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, E-28006 Madrid (Spain)

    2012-12-15T23:59:59.000Z

    The phase transformation of Ge{sub 2}Sb{sub 2}Te{sub 5} films from the melt-quenched amorphous phase into the crystalline phase induced by 800 nm, 100 fs laser pulses has been studied. For partly amorphized films, progressive crystallization could be induced by single pulses, which can be explained by growth of already existing crystalline embryos. For completely amorphized films, it was not possible to induce crystallization with one or two consecutive pulses; three pulses being the threshold for the onset of crystallization. By employing a fs laser double pulse with an adjustable inter-pulse delay, partial crystallization could be triggered for a delay range of 200 fs-100 ps, while for longer delays no crystallization was possible. The time window for stimulated crystallization can be related to the relaxation dynamics of free electrons excited by the first pulse, which are further excited by the second pulse still remaining in the excited state. Our results indicate that the lifetime of excited electrons in melt-quenched amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} is Almost-Equal-To 100 ps.

  7. Deliverable for F?ST project: Ln Resin based PLE

    SciTech Connect (OSTI)

    Peterson, Dominic S. [Los Alamos National Laboratory; Armenta, Claudine E. [Los Alamos National Laboratory; Rim, Jung H. [Los Alamos National Laboratory

    2012-05-03T23:59:59.000Z

    This memo describes the fabrication of a polymer ligand extractant based on Eichrom's LN-1 resin. This work has been in support of the Fast Alpha Spectrometry Tool (F{alpha}ST) project. The first part of LANL's role in this project is to evaluate new extractants for use in polymer ligand extractants (PLEs). The first new extractant evaluated is Di(2-ethyl hexyl) phosphoric acid (HDEHP), which is an effective metal extractant. It has very efficient chelating properties for a wide variety of metal ions. HDEHP is an amphiphillic molecule with two long hydrocarbon chains and a polar end with a phosphoryl oxygen (P=O) and an acidic -OH group as shown in Figure 1. HDEHP has shown effectiveness in extracting lanthanides, selective actinides, and other trivalent elements. Several authors have reported that lanthanides and elements with +3 oxidation state have similar extraction behavior in nitric acid. The distribution ratio for lanthanides rapidly decreases at lower nitric concentration then start to increase at higher concentration as shown in. The trivalent americium, curium, and yttrium exhibit similar trend as trivalent lanthanides. This extraction trend can be also observed from hydrogen chloride solution. This work describes the use of this ligand in a PLE to extract plutonium from solution. Polymer ligand films were prepared by dissolving HDEHP ligands and polystyrene beads in THF. The solution was directly deposited onto a 40 mm diameter stainless steel substrate using an automated pipette. HDEHP based PLEs with direct stippling method are shown in Figure 2. The solution was air dried at room temperature overnight to ensure complete evaporation of THF. The plutonium tracer solution was prepared in 0.01, 0.1, 1, and 8M nitric solutions to study the effect of nitric concentration in plutonium extraction. 0.1667 Bq {sup 239}Pu tracer solution was directly stippled on each PLE and was allowed to equilibrate for 3 hours before removing the solution. The plutonium activity of each sample was measured by direct alpha counting to quantify the plutonium recovery by HDEHP PLE. The alpha spectra from alpha spectroscopy are shown in Figure 3. 1:5, 1:10, and 1:20 PLEs had sharp peak with low tailing. 1:2 had an extremely long tail, which is a possible indication that a large amount of ligands caused the film to not form a smooth surface. Also, it can be noted that 1:2 ratio PLE surface was not as rigid as the other ratio PLEs and it was prone to scratching during sample handing. The resolution of alpha spectra was quantified by measuring Full Width at Half of the Maximum (FWHM) using Bortels equation. The tailing component of the peak was also measured along with FWHM. The peak resolutions and tailing measurements for 0.1M nitric solution samples are given in Table 1. The best resolution was achieved with 1:5 PLE and worst was given by 1:2 PLE. The plutonium recovery by HDEHP PLE was dependent on both nitric concentration and ligand to polymer ratio. 1:2 PLE consistently had the highest recovery followed by 1:5 as shown in Figure 4. It should be noted that 1:2 ratio PLEs consistently had long tailing and the ROI of the spectrum had to be increased to encompass total counts from the tracer. 1:10 and 1:20 PLEs had close to zero percent recovery in all nitric concentration except for 0.01M. The highest plutonium recovery was observed for 0.1M nitric acid. 1:5 PLE gave the best combination of alpha spectroscopy resolution and plutonium recovery. Radiography image of samples were generated to study the plutonium distribution on the PLE surface. Samples were placed on an imaging plate (Fujifilm BAS-TR 2025) for 24 hours and the plate was scanned using GE Typhoon FLA 7000 system. The radiography image in Figure 5 shows uneven distribution with hot spots along the edge and in the center of the samples. These hot spots may be the result of highly localized concentration of ligands or surface defects that were observed in SEM. This unevenness in distribution may cause inaccurate activity measurement by alpha spectroscopy due to a bias in the

  8. Marine and Petroleum Geology 25 (2008) 271288 Surface and subsurface signatures of gas seepage in the St. Lawrence

    E-Print Network [OSTI]

    Long, Bernard

    2008-01-01T23:59:59.000Z

    parts of the St. Lawrence platform and suggest the presence of a mature hydrocarbon source an open-window to the petroleum system and provide indirect evidence for the presence of mature source are characterized by seismic chimneys that may be traced down to the autochthonous Paleozoic rocks (St. Lawrence

  9. 2007 Raj JainCSE571SWashington University in St. Louis Secure Socket Layer (SSL)Secure Socket Layer (SSL)

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    Jain, Raj

    15-1 ©2007 Raj JainCSE571SWashington University in St. Louis Secure Socket Layer (SSL)Secure Socket Layer (SSL) and Transport Layerand Transport Layer Security (TLS)Security (TLS) Raj Jain Washington in St. Louis OverviewOverview History and overview of SSL/TLS Products and Implementations Datagram

  10. 2009 Raj JainCSE571SWashington University in St. Louis Secure Socket Layer (SSL)Secure Socket Layer (SSL)

    E-Print Network [OSTI]

    Jain, Raj

    15-1 ©2009 Raj JainCSE571SWashington University in St. Louis Secure Socket Layer (SSL)Secure Socket Layer (SSL) and Transport Layerand Transport Layer Security (TLS)Security (TLS) Raj Jain Washington in St. Louis OverviewOverview History and overview of SSL/TLS Products and Implementations Datagram

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    Proceedings of 4th Fire Behavior and Fuels Conference, July 1-4, 2013, St. Petersburg, Russia, Russia F USDA Forest Service, Rocky Mountain Research Station 5775 W US Highway 10 Missoula MT 59808 G;Proceedings of 4th Fire Behavior and Fuels Conference, July 1-4, 2013, St. Petersburg, Russia Published

  12. Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection

    E-Print Network [OSTI]

    New Mexico, University of

    . Sharma, and S. Krishna Center for High Technology Materials, University of New Mexico, 1313 Goddard St SE, Albuquerque, New Mexico 87106 S. J. Lee and S. K. Noh Korea Research Institute Standards and Science (KRISS imaging. It includes satellite-based surveillance, atmo- spheric pollution probes, and astrophysical

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    1 Water Policy and Economics Conference 21st Century Water Issues in the Southern States October 13 actively address water policy issues in 13 southern states (Alabama, Florida, Georgia, Kentucky, Louisiana ............................................................................................. 4 · Welcome and meeting objectives - Mike Smolen (Oklahoma State University) · Key water programs

  14. POTASSIC MAGMATISM ON ST. LAWRENCE ISLAND, ALASKA, AND CAPE DEZHNEV, NORTHEAST RUSSIA

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    Amato, Jeff

    1 POTASSIC MAGMATISM ON ST. LAWRENCE ISLAND, ALASKA, AND CAPE DEZHNEV, NORTHEAST RUSSIA: EVIDENCE island on the Bering Shelf between Russia andAlaska and was the subject of reconnaissance investigations a syenite pluton at Cape Dezhnev on the Chukotka Peninsula of Russia. These geochemical data are used

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    Toro, Jaime

    1 POTASSIC MAGMATISM ON ST. LAWRENCE ISLAND, ALASKA, AND CAPE DEZHNEV, NORTHEAST RUSSIA: EVIDENCE island on the Bering Shelf between Russia andAlaska and was the subject of reconnaissance investigations a syenite pluton at Cape Dezhnev on the Chukotka Peninsula of Russia. These geo-chemical data are used

  16. Adaptive Optimizing Compilers for the 21st Keith D. Cooper Devika Subramanian Linda Torczon

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    Historically, compilers have operated by applying a fixed set of optimizations in a predetermined order. WeAdaptive Optimizing Compilers for the 21st Century Keith D. Cooper Devika Subramanian Linda Torczon call such an ordered list of optimizations a compilation sequence. This paper describes a prototype

  17. www.climate.iitb.ac.in 1st CLIMATE SCIENCE AND

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    Sarawagi, Sunita

    www.climate.iitb.ac.in 1st CLIMATE SCIENCE AND POLICY WORKSHOP (CSPW)(CSPW) 6th & 7th March, 2014 a scientific understanding of regional climate change and connect it to impacts and effective response. www.climate.iitb.ac.in #12;Interdisciplinary Programme in Climate Studies Indian Institute of Technology Bombay The Climate

  18. Aviation Safety Reporting System 625 Ellis St. Suite 305 Mountain View California 94043

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    of the event. Those who work to improve aviation safety have long recognized that incident reporting fromAviation Safety Reporting System 625 Ellis St. Suite 305 Mountain View California 94043 Cabin Crew Safety Information Article Presented at the 17th International Aircraft Cabin Safety Symposium by Linda

  19. SUSAN BLAKE CURRICULUM VITAE 1033 E. Third St., Sycamore Hall 026, Bloomington, IN 47405

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    Indiana University

    Blake CV 1 SUSAN BLAKE CURRICULUM VITAE 1033 E. Third St., Sycamore Hall 026, Bloomington, IN 47405 blakes@indiana.edu 217-419-6860 AOS: epistemology; philosophy of perception; Chinese philosophy. AOC, Philosophy PhD program, 2006--present. Dissertation: Mental Content and Epistemic Foundations. Director: Gary

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    Seminar Series Friday, June 1st, 2012, 13.00 - 14.00 Dynamics of indigenous soil-water management soil-water management practices found in Mbinga district, Ruvuma, Tanzania. The study aimed Nsenga Visiting PhD Student Centre for Sustainable Rural Development Sokoine University of Agriculture